Electro-optical device and electronic apparatus

Abstract

To relax positioning accuracy when a substrate with an LED formed thereon and a substrate including a driving circuit are bonded to each other.SOLUTION: An electro-optical device includes: a common electrode 310; a plurality of structural bodies 320, each including a first semiconductor layer 321 electrically coupled to the common electrode 310, a second semiconductor layer 322, and a light emission function layer 325 provided between the first semiconductor layer 321 and the second semiconductor layer 322; and a driving circuit board 20 including a pixel electrode 221 and a driving circuit 202 electrically coupled to the pixel electrode 221. The plurality of structural bodies 320 include: a first structural body 320a provided at a position overlapping the pixel electrode 221 in plan view, the pixel electrode 221 being electrically coupled to the second semiconductor layer 321; and a second structural body 320b provided at a position not overlapping the pixel electrode 221 in plan view, the pixel electrode 221 not being electrically coupled to the second semiconductor layer.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to an electro-optical device and an electronic device. [Background technology]

[0002] A micro LED display device is known that has a micro LED panel on which a plurality of micro LED pixels are formed, and a micro LED drive substrate that drives the micro LEDs individually (see, for example, Patent Document 1, FIG. 18). The micro LED drive substrate includes a CMOS cell (drive circuit) for individually driving the micro LED pixels, and a bump for electrically connecting to the micro LED pixels. In the multiple micro LED pixels, one electrode is a common electrode and the other electrode faces the micro LED driving substrate, and the micro LED panel and the micro LED driving substrate are bonded together with the other electrode of the micro LED pixel connected to the bump of the micro LED driving substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2018-185515 A Summary of the Invention [Problem to be solved by the invention]

[0004] However, the technology described in Patent Document 1 has a problem in that the alignment required when bonding the micro LED drive substrate and the micro LED panel in close contact with each other is very strict. [Means for solving the problem]

[0005] In order to solve the above problem, an electro-optical device according to one embodiment of the present disclosure has a substrate including a first electrode, a plurality of structures each including a first semiconductor layer of a first conductivity type electrically connected to the first electrode, a second semiconductor layer of a second conductivity type, and a light-emitting functional layer provided between the first semiconductor layer and the second semiconductor layer and capable of emitting light when a current is injected therein, a second electrode, and a drive circuit electrically connected to the second electrode, wherein the plurality of structures include a first structure provided at a position overlapping with the second electrode in a planar view, the second electrode being electrically connected to the second semiconductor layer, and a second structure provided at a position not overlapping with the second electrode in a planar view, the second electrode being electrically not connected to the second semiconductor layer. [Brief description of the drawings]

[0006] [Figure 1] 1 is a cross-sectional view that illustrates a schematic diagram of an electro-optical device according to an embodiment. [Diagram 2] 1 is a cross-sectional view that illustrates a schematic diagram of an electro-optical device according to an embodiment. [Diagram 3] 1 is a cross-sectional view that illustrates a schematic diagram of an electro-optical device according to an embodiment. [Figure 4] FIG. 2 is a plan view showing a buffer layer, pixel electrodes, and the like in the electro-optical device. [Diagram 5] 3 is a cross-sectional view showing a structure of a structural body in an electro-optical device. [Figure 6] FIG. 2 is a plan view showing the positional relationship between structures and a buffer layer in an electro-optical device. [Figure 7] FIG. 1 is a perspective view showing a head mounted display using an electro-optical device. [Figure 8] FIG. 2 is a diagram showing an optical configuration of a head mounted display. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] Hereinafter, electro-optical devices according to embodiments will be described with reference to the drawings. In each drawing, the dimensions and scale of each part are appropriately different from the actual ones. In addition, the embodiments described below are preferred specific examples, and therefore various technically preferable limitations are attached, but the scope of the present disclosure is not limited to these forms unless otherwise specified in the following description to the effect that the present disclosure is limited.

[0008] 1 to 3 are partial cross-sectional views showing the configuration of an electro-optical device 10 according to an embodiment. The electro-optical device 10 has a configuration in which a drive circuit board 20 and an LED board 30 are bonded together, and then a board 300 in the LED board 30 is peeled off. In detail, Fig. 1 is a diagram showing a state before the drive circuit board 20 and the LED board 30 are bonded together, Fig. 2 is a diagram showing a state immediately after the drive circuit board 20 and the LED board 30 are bonded together, and Fig. 3 is a diagram showing a state in which the board 300 has been peeled off from the LED board 30.

[0009] In plan view, pixel electrodes 221 are arranged in a matrix in the horizontal and vertical directions on the drive circuit board 20. For convenience, the horizontal direction in the matrix arrangement of the pixel electrodes 221 is defined as the X direction, and the vertical direction is defined as the Y direction. In addition, when the drive circuit board 20 and the LED board 30 are attached to each other, the direction from the drive circuit board 20 toward the LED board 30 is defined as the Z direction. In this embodiment, the Z direction is the light emission direction. Also, the pixel electrode 221 is an example of a second electrode. In this description, a plan view refers to viewing the substrate from a direction perpendicular to the substrate surface, i.e., the thickness direction of the substrate, and a cross-sectional view refers to viewing the substrate by cutting the substrate in the direction perpendicular to the substrate surface.

[0010] 1, the drive circuit board 20 has a drive circuit 202 and the like formed on a substrate 200. The substrate 200 is, for example, a Si substrate. The drive circuit 202 is provided in one-to-one correspondence with a pixel, which is the smallest unit of display when viewed as a display device, and supplies a current corresponding to the luminance of the pixel to an element corresponding to the pixel.

[0011] An output terminal of the driving circuit 202 is electrically connected to the reflective layer 204 via a plug 206 filled in a contact hole. The plug 206 is made of, for example, tungsten (W) or an alloy containing tungsten. The reflective layer 204 is, for example, a conductive layer in which an aluminum-copper alloy (AlCu) film is laminated on a titanium (Ti) film, and the conductive layer having reflectivity and light blocking properties is patterned into an island shape in a plan view for each pixel. The reflective layer 204 patterned into an island shape covers the driving circuit 202 in a plan view. Light incident from the opposite direction to the Z direction is reflected by the reflective layer 204 and emitted in the Z direction. In other words, since the driving circuit 202 is light-shielded by the reflective layer 204, the deterioration of the transistor characteristics due to light leakage and the like is suppressed, and the emission efficiency in the Z direction is improved. The reflective layer 204 is an example of a light-blocking layer.

[0012] The insulating layer 208 is a reflective layer for enhancing the reflective properties of the reflective layer 204. The insulating layer 208 has insulating properties and optical transparency, and is patterned so as to cover the reflective layer 204 and to have substantially the same shape as the reflective layer 204 in a plan view. The insulating layer 208 is made of, for example, silicon oxide. In addition, grooves 209 are formed by island-shaped patterning of the reflective layer 204 and the insulating layer 208 .

[0013] The insulating layer 210 covers the insulating layer 208 and is provided along the groove 209. Therefore, the insulating layer 210 has a recess 210a in the vicinity of the groove 209. The buried insulating layer 212 is provided so as to fill the recess 210a. For example, silicon nitride (SiN) is used as the insulating layer 210, and for example, silicon oxide is used as the buried insulating layer 212.

[0014] The insulating layers 208 and 210 are opened by a contact hole for each pixel, and the contact hole is filled with a plug 214. The surfaces of the insulating layer 210, the buried insulating layer 212, and the plug 214 are planarized by CMP or the like. The plug 214 is made of, for example, tungsten (W) or an alloy containing tungsten. A pixel electrode 221 is provided for each pixel on the planarized surface. The pixel electrode 221 is formed by patterning a light-transmitting conductive layer such as ITO into a shape substantially identical to that of the reflective layer 204 so as to overlap the reflective layer 204 in a planar view. The pixel electrode 221 is electrically connected to the reflective layer 204 via a plug 214.

[0015] The buffer layer 231 is provided for each pixel electrode 221. The buffer layer 231 functions as a buffer layer and a connection layer when attached to the LED substrate 30, and is configured by laminating a plurality of metal layers. For example, the buffer layer 231 is configured by laminating a Ti film and an Au film in this order when viewed from the pixel electrode 221. The buffer layer 231 is provided within the range of the pixel electrode 221 in plan view. In detail, the outer edge of the buffer layer 231 is located in front of the outer edge of the pixel electrode 221 when viewed from the diagonal center of the pixel electrode 221 or the buffer layer 231 in plan view.

[0016] The insulating layer 241 is laminated on the insulating layer 210, the buried insulating layer 212, or the pixel electrode 221, and is provided so as to cover the periphery of the pixel electrode 221 and not to cover the buffer layer 231 within the range of the opening Ap. The insulating layer 241 is made of, for example, silicon oxide. The insulating layer 241 is divided into a portion 241a laminated on the insulating layer 210 or the buried insulating layer 212, and a portion 241b laminated on the pixel electrode 221. Of these, an end 241c of the portion 241b defines the outer edge of the opening Ap.

[0017] FIG. 4 is a diagram showing the shapes of the openings Ap, the buffer layer 231, and the pixel electrodes 221 in the drive circuit substrate 20 in a plan view. As shown in the figure, the buffer layer 231 is located within the aperture region of the aperture Ap in plan view, and the portion 241b covers the outer edge of the pixel electrode 221. Therefore, when viewed from the diagonal center of the pixel electrode 221 or the buffer layer 231 in a plan view, the outer edge of the buffer layer 231, the end 241c of the insulating layer 241, and the outer edge of the pixel electrode 221 are located in this order. The buffer layer 231 and the portion 241b of the insulating layer 241 laminated on the pixel electrode 221 are aligned to have approximately the same height by, for example, CMP processing.

[0018] The LED substrate 30 includes a substrate 300, a common electrode 310, and a plurality of structures 320. The substrate 300 is, for example, a Si substrate, a quartz substrate, or a sapphire substrate. The common electrode 310 is a light-transmitting conductive layer such as ITO or Tin, and is laminated on the substrate 300. The common electrode 310 is an example of a first electrode. The structures 320 are stacked on the common electrode 310, and are columnar objects that protrude downward in the figure, and become light-emitting bodies when certain conditions are met. The stacking order of the structures 320 is downward with respect to the substrate 300. In other words, although the structures protrude downward in the figure, in the manufacturing process they are formed sequentially in the upward direction with respect to the substrate 300, and are turned over when attached to the drive circuit substrate 20, as shown in FIG.

[0019] 5 is a partial cross-sectional view showing detailed structures of the plurality of structures 320 formed on the LED substrate 30. Focus is given on one of the plurality of structures 320. In the structure 320, a first semiconductor layer 321, a light-emitting functional layer 325, a second semiconductor layer 322, and an electrode 331 are provided in this order as viewed from the common electrode 310.

[0020] The first semiconductor layer 321 is, for example, an n-type GaN layer doped with Si. The light emitting functional layer 325 is an active layer capable of generating light by injecting a current. The light emitting functional layer 325 has, for example, a well layer and a barrier layer. The well layer and the barrier layer are i-type semiconductor layers that are not intentionally doped with impurities. The well layer is, for example, an InGaN layer. The barrier layer is, for example, a GaN layer. The second semiconductor layer 322 is a layer of a conductivity type different from that of the first semiconductor layer 321, and is, for example, a p-type GaN layer doped with Mg. The first semiconductor layer 321 and the second semiconductor layer 322 are cladding layers that confine light in the light emitting functional layer 325. The electrode 331 is an electrode electrically connected to the buffer layer 231 in the drive circuit board 20, and is a conductive film formed by laminating, for example, a Pt film, a Ti film, and an Au film in this order when viewed from the second semiconductor layer 322.

[0021] In the structure 320, a pin diode is configured by the p-type second semiconductor layer 322, the i-type light emitting functional layer 325, and the n-type first semiconductor layer 321. Therefore, in the light emitting device 100, when a forward bias voltage of the pin diode is applied to the electrode 331 and the common electrode 310, a current is injected into the light emitting functional layer 325, and recombination of electrons and holes occurs in the light emitting functional layer 325. This recombination generates light.

[0022] FIG. 6 is a plan view showing the arrangement of the structures 320 on the LED substrate 30 when viewed from the drive circuit substrate 20. As shown in FIG. The planar shape of the structures 320 is substantially square in this embodiment, and they are arranged in a matrix in the X and Y directions, similar to the pixel electrodes 221 of the drive circuit board 20. However, while the length of one side of the pixel electrodes 221 is several μm in plan view, specifically about 3 μm, the length of one side of the square of the structures 320 is, for example, 50 nm or more and 500 nm or less, and the arrangement pitch is about twice that. In this embodiment, the planar shape of the structure 320 is approximately square, but is not limited to a square. The planar shape of the structure 320 may be any shape, such as a circle, an ellipse, a triangle, or a hexagon.

[0023] Such an LED substrate 30 is attached to the drive circuit substrate 20 with the protruding direction of the structures 320 facing the drive circuit substrate 20, as shown in FIG. Although one side of the pixel electrode 221 is 3 μm, and one side of the buffer layer 231 exposed at the opening Ap of the insulating layer 241 is slightly shorter than the pixel electrode 221, when the drive circuit board 20 and the LED board 30 are bonded together, one buffer layer 231 necessarily includes a plurality of structures 320. The outer edge of the buffer layer 231 is indicated by a dashed line in FIG.

[0024] In a plan view, after bonding, among the multiple structures 320, structures 320 partly or entirely contained in the buffer layer 231 are denoted by reference numeral 320a, and structures 320 not contained in the buffer layer 231 are denoted by reference numeral 320b. Structure 320a is an example of a first structure, and structure 320b is an example of a second structure.

[0025] When the LED substrate 30 is attached to the drive circuit substrate 20, the Au film on the outermost surface of the electrode 327 of the structure 320a comes into contact with the Au film on the outermost surface of the buffer layer 231, and the electrode 327 of the structure 320a is electrically connected to the buffer layer 231. Therefore, a current according to the gradation level is supplied to the structure 320a through the drive circuit 202, the plug 206, the reflective layer 204, the plug 214, the pixel electrode 221, and the buffer layer 231 in this order. Therefore, the light-emitting functional layer 325 of the structure 320a functions as a light emitter that emits light according to the gradation level in the pixel corresponding to the pixel electrode 221. Of the light emitted from the light emitting functional layer 325, the light traveling in the opposite direction to the Z direction is reflected by the reflective layer 204 and emitted in the Z direction.

[0026] On the other hand, when the structures are bonded together, the Au film on the outermost surface of the electrode 327 of the structure 320b is not in contact with anything or is in contact with the portion 241b of the insulating layer 241. Therefore, no current is supplied from the pixel electrode 221 to the structure 320a, and the structure 320a becomes a non-luminous body.

[0027] If the structures 230 are provided in one-to-one correspondence with the pixel electrodes 221, high positional accuracy is required when bonding the drive circuit board 20 and the LED board 30. In particular, if the pixel electrodes 221 are on the order of several μm, the two boards must be aligned with even finer submicron accuracy. The relative positions of the two substrates may be shifted within the plane due to differences in the amount and direction of warping that occurs in the two substrates. In this case, elements that are provided in accordance with the arrangement pattern of the pixel electrodes 221 on the drive circuit substrate 20, such as microlenses, may be shifted, which may result in a deterioration in display quality. In addition, when the micro LED is cut by isolating each pixel, the light emission efficiency may be reduced. In detail, when the micro LED is isolated by dry etching using a reactive gas, the micro LED is damaged by the reactive gas, and the light emission efficiency is reduced.

[0028] In contrast, in this embodiment, even if the LED substrate 30 is misaligned in the X direction, Y direction, or rotated relative to the drive circuit substrate 20 during bonding, one buffer layer 231 always contains a plurality of structures 320. For this reason, in this embodiment, high positional accuracy is not required when bonding the drive circuit substrate 20 and the LED substrate 30 together, even if miniaturization progresses. In addition, in this embodiment, misalignment when the drive circuit board 20 and the LED board 30 are attached does not cause a problem, so even if there are additional elements that are provided in accordance with the arrangement pattern of the pixel electrodes 221, degradation of display quality is suppressed. In addition, in this embodiment, since the LED elements are not separated, there is no decrease in luminous efficiency due to damage.

[0029] If the substrates 200 and 300 are Si substrates, it is possible to manufacture the electro-optical device 10 according to the embodiment using conventional semiconductor manufacturing equipment.

[0030] The above-described embodiment can be modified or applied in various ways as follows.

[0031] In the embodiment, the light emitting functional layer 325 of the structure 320 is horizontal to the substrate surface of the substrate 300, that is, the XY plane, but may be convex in the Z direction, for example.

[0032] In the embodiment, the substrate 300 is peeled off after the LED substrate 30 is bonded to the drive circuit substrate 20, but the substrate 300 may not be peeled off. Specifically, when the substrate 300 has transparency, the light from the light-emitting functional layer 325 passes through the substrate 300 and is emitted in the Z direction. Furthermore, the substrate 200 may be a transparent glass substrate instead of a Si substrate. If the substrate 200 is a glass substrate, even if the substrate 300 is a Si substrate, there is no need to peel off the substrate 300 after bonding. If the substrate 200 is a glass substrate and the substrate 300 is a Si substrate, the reflective layer 204 is not provided in the drive circuit substrate 20, and the light from the light emitting functional layer 325 is emitted in the opposite direction to the Z direction, that is, from the substrate 300.

[0033] In the embodiment, since strict positional accuracy is not required in bonding the drive circuit board 20 and the LED board 30, the shape of the board 200 and the planar shape of the board 300 do not need to be disk (wafer) shaped and there are no restrictions, so they may be, for example, rectangular. The drive circuit boards 20 or LED boards 30 are formed in multiple pieces on a large substrate, and then cut into individual rectangular shapes by dicing after bonding, but if the substrate 200 or 300 is disk-shaped, there will be a lot of wasted area (dead space). If the substrate 200 or 300 is rectangular, the wasted area can be reduced.

[0034] Next, an electronic device to which the electro-optical device 10 according to the embodiment is applied will be described. The electro-optical device 10 is suitable for applications requiring small-sized pixels and high-definition display. Therefore, a head-mounted display will be taken as an example of the electronic device.

[0035] FIG. 7 is a diagram showing the appearance of a head mounted display, and FIG. 8 is a diagram showing the optical configuration thereof. First, as shown in Fig. 7, the head mounted display 400 has temples 410, a bridge 420, and lenses 401L and 401R in appearance similar to general eyeglasses. Also, as shown in Fig. 8, the head mounted display 400 has an electro-optical device 10L for the left eye and an electro-optical device 10R for the right eye provided near the bridge 420 and on the rear side of the lenses 401L and 401R (the lower side in the figure). The image display surface of the electro-optical device 10L is disposed to the left in FIG. 8. As a result, the image displayed by the electro-optical device 10L is output in the 9 o'clock direction in the figure via the optical lens 402L. The half mirror 403L reflects the image displayed by the electro-optical device 10L in the 6 o'clock direction, while transmitting light incident from the 12 o'clock direction. The image display surface of the electro-optical device 10R is disposed to the right, opposite the electro-optical device 10L. As a result, the image displayed by the electro-optical device 10R is output in the 3 o'clock direction in the figure via the optical lens 402R. The half mirror 403R reflects the image displayed by the electro-optical device 10R in the 6 o'clock direction, while transmitting light incident from the 12 o'clock direction.

[0036] In this configuration, a person wearing the head mounted display 400 can observe images displayed by the electro-optical devices 10L and 10R in a see-through state in which the images are superimposed on the outside world. Furthermore, in this head mounted display 400, when the electro-optical device 10L displays an image for the left eye and the electro-optical device 10R displays an image for the right eye among the binocular images with parallax, the wearer can perceive the displayed image as if it had depth and a three-dimensional effect.

[0037] Note that electronic devices including the electro-optical device 10 can be applied to electronic viewfinders in video cameras and interchangeable lens digital cameras, smart watches, display units of wearable devices, light bulbs of projection projectors, etc., in addition to the head mounted display 400. In addition, the present invention can be applied not only to display units, but also to surface light emitting elements having a matrix-shaped light source, specifically, backlights, optical communication elements, etc.

[0038] From the above-mentioned exemplary embodiments, the following aspects can be understood, for example.

[0039] An electro-optical device according to one embodiment 1 has a substrate including a first electrode, a plurality of structures each including a first semiconductor layer of a first conductivity type electrically connected to the first electrode, a second semiconductor layer of a second conductivity type, and a light-emitting functional layer provided between the first semiconductor layer and the second semiconductor layer and capable of emitting light when a current is injected therein, a second electrode, and a driving circuit electrically connected to the second electrode, wherein the plurality of structures include a first structure provided at a position overlapping the second electrode in a planar view, the second electrode being electrically connected to the second semiconductor layer, and a second structure provided at a position not overlapping the second electrode in a planar view, the second electrode being electrically not connected to the second semiconductor layer.

[0040] According to the electro-optical device of aspect 1, among the multiple structures, in a planar view, the first structures included in the second electrode function as first structures, and the second structures not included in the second electrode do not function as light-emitting bodies, so that strict alignment between the second electrode and the multiple structures is not required. The term "array" refers to a two-dimensional regular arrangement such as a matrix or delta shape.

[0041] In the electro-optical device according to a specific aspect 2 of aspect 1, a conductive buffer layer is provided on the substrate, and the buffer layer is located between the second electrode and the second semiconductor layer. In the electro-optical device according to aspect 2, the buffer layer can absorb impacts generated when the substrate and the plurality of structures are bonded to each other.

[0042] In an electro-optical device according to a third specific aspect of the second aspect, an insulating layer is provided on the substrate, and the insulating layer covers a periphery of the second electrode in a plan view and opens the second electrode. In the electro-optical device according to the third aspect, the insulating layer is provided in an area other than the opening of the second electrode in a plan view, so that the first structure functioning as a light emitter and the second structure not functioning as a light emitter can be clearly separated from each other.

[0043] In an electro-optical device according to a fourth specific example of the third example, the buffer layer is provided within the opening of the insulating layer in a planar view. In the electro-optical device according to the fourth example, the buffer layer is provided within the opening of the insulating layer in a planar view, so that, among the multiple structures, a structure that overlaps with the buffer layer in a planar view can be defined as a first structure.

[0044] In an electro-optical device according to a fifth specific example of the fourth example, the insulating layer is in contact with at least one of the second structures. In the electro-optical device according to the fifth example, even if the insulating layer is in contact with the second structures, the second structures do not function as light emitters.

[0045] An electro-optical device according to a sixth aspect, which is a specific example of the first aspect, has a light-shielding layer between the drive circuit and the second electrode in a cross-sectional view. In the electro-optical device according to the sixth aspect, the light emitted from the first structure is blocked by the light-shielding layer before it reaches the drive circuit, thereby suppressing performance degradation in the drive circuit due to light leakage or the like.

[0046] An electronic device according to a seventh aspect includes the electro-optical device according to any one of the first to sixth aspects. [Explanation of symbols]

[0047] 10...electro-optical device, 20...driving circuit board, 30...LED board, 202...driving circuit, 204...reflective layer, 221...pixel electrode (second electrode), 231...buffer layer, 241...insulating layer, 310...common electrode (first electrode), 320...structure, 320a...structure (first structure), 320b...structure (second structure), 321...first semiconductor layer, 322...second semiconductor layer, 325...light-emitting functional layer, Ap...opening, 400...head mounted display.

Claims

1. A first electrode; a plurality of structures each including a first semiconductor layer of a first conductivity type electrically connected to the first electrode, a second semiconductor layer of a second conductivity type, and a light emitting functional layer provided between the first semiconductor layer and the second semiconductor layer and capable of emitting light when a current is injected therein; a substrate including a second electrode and a drive circuit electrically connected to the second electrode; having The plurality of structures include a first structure provided at a position overlapping with the second electrode in a plan view, the second electrode being electrically connected to the second semiconductor layer; a second structure provided at a position not overlapping with the second electrode in a plan view, the second electrode being electrically disconnected from the second semiconductor layer; Includes Electro-optical device.

2. A conductive buffer layer is provided on the substrate, The buffer layer is located between the second electrode and the second semiconductor layer.

2. The electro-optical device according to claim 1.

3. An insulating layer is provided on the substrate; The insulating layer covers a periphery of the second electrode in a plan view and has an opening in the second electrode.

3. The electro-optical device according to claim 2.

4. In a plan view, the buffer layer is provided within the range of the opening of the insulating layer.

4. The electro-optical device according to claim 3.

5. The insulating layer is In contact with at least one of the second structures 5. The electro-optical device according to claim 4.

6. A light-shielding layer is provided between the driving circuit and the second electrode in a cross-sectional view.

2. The electro-optical device according to claim 1.

7. 7. An electronic apparatus comprising the electro-optical device according to claim 1.

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