Display device

Abstract

To provide a low-power display device with high efficiency, having an optical efficiency improved, and provide a display device having a display quality improved by miniaturizing a brightness deterioration and a color coordinate change due to a view angle.SOLUTION: A display device 100 contains a plurality of sub-pixels SP1, SP2, and SP3 that are arranged onto a substrate 110, and includes a plurality of transistors 120, a plurality of first electrodes 141-1, 141-2, and 141-3 that contain a reflection layer 141M and a transparent conductive layer 141T thereon that are connected to each transistor 120, a light emission part 142 thereon, and a second electrode 143. The transparent conductive layer 141T contains a first part in contact with the reflection layer 141M, and a second part separated from the reflection layer 141M. An interval of a light micro-cavity emitted in the light emission part 142 in contact with the first part of the transparent conductive layer 141T may be different from an interval of the light micro-cavity emitted in the light emission part 142 in contact with the second part of the transparent conductive layer 141T.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present specification relates to a display device, and more particularly to a display device capable of improving light efficiency and display quality. [Background technology]

[0002] Unlike LCDs, OLEDs do not require a separate light source and can be manufactured to be lightweight and thin. In addition, OLEDs are advantageous in terms of power consumption due to low voltage operation, and are also excellent in color realization, response speed, viewing angle, and contrast ratio (CR), and are being researched as the next generation of displays.

[0003] An organic light emitting display device is a self-emitting display device that uses organic light emitting elements that emit light when electrons and holes are injected into the light emitting layer from a cathode for electron injection and an anode for hole injection, respectively, and excitons formed by the injected electrons and holes combine and fall from an excited state to a ground state.

[0004] Organic light emitting display devices can be classified into top emission type, bottom emission type, dual emission type, etc. depending on the direction in which light is emitted, and can be classified into passive matrix type, active matrix type, etc. depending on the driving method. Summary of the Invention [Problem to be solved by the invention]

[0005] The problem to be solved by the present specification is to provide a highly efficient, low power display device with improved light efficiency.

[0006] Another object of the present invention is to provide a display device having improved display quality by minimizing a decrease in luminance and a change in color coordinates depending on a viewing angle.

[0007] The subject of the present specification is not limited to the subject mentioned above, and other subjects not mentioned will be clearly understood by those skilled in the art from the following description. [Means for solving the problem]

[0008] A display device according to an embodiment of the present specification includes a substrate on which a plurality of sub-pixels are arranged, a plurality of transistors arranged on the substrate in each of the plurality of sub-pixels, a plurality of first electrodes connected to the plurality of transistors on the plurality of transistors, each of the first electrodes including a reflective layer and a transparent conductive layer arranged on the reflective layer, a light-emitting portion arranged on the plurality of first electrodes, and a second electrode arranged on the light-emitting portion, the transparent conductive layer including a first portion in contact with the reflective layer and a second portion spaced apart from the reflective layer, and a micro-cavity interval of light emitted from the light-emitting portion in contact with the first portion of the transparent conductive layer may be different from a micro-cavity interval of light emitted from the light-emitting portion in contact with the second portion of the transparent conductive layer.

[0009] Further details of the embodiments are included in the detailed description and the drawings.

[0010] According to the effect of the present specification, the intensity of light emitted from the sub-pixel is increased, thereby improving the light efficiency of the display device.

[0011] According to the effects of the present specification, it is possible to minimize the change in light intensity due to the change in the viewing angle, thereby improving the decrease in brightness and the change in color coordinates due to the viewing angle.

[0012] The effects of the present specification are not limited to the contents exemplified above, and various other effects are included within the present specification. [Brief description of the drawings]

[0013] [Figure 1]FIG. 1 is a plan view of a display device according to an embodiment of the present specification. [Diagram 2] FIG. 2 is a cross-sectional view taken along line II-II' of FIG. [Diagram 3] 1 is a graph showing light intensity according to a viewing angle in a first portion and a second portion of a display device according to an embodiment of the present specification. [Figure 4a] FIG. 11 is a cross-sectional view of a display device according to another embodiment of the present specification. [Figure 4b] FIG. 4b is an enlarged view of region IVb of FIG. [Diagram 5] FIG. 11 is a cross-sectional view of a display device according to still another embodiment of the present specification. [Figure 6] FIG. 11 is a cross-sectional view of a display device according to still another embodiment of the present specification. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] The advantages and features of the present specification, and the methods for achieving them, will become clear from the following detailed description of the embodiments in conjunction with the accompanying drawings. However, the present specification is not limited to the embodiments disclosed below, and may be embodied in various different forms, and the embodiments are provided solely to ensure that the disclosure of the present specification is complete and to fully convey the scope of the specification to those skilled in the art to which the present specification pertains.

[0015] The shapes, areas, ratios, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of this specification are illustrative, and the specification is not limited to the matters illustrated. The same reference symbols refer to the same components throughout the specification. In addition, in explaining this specification, if it is determined that a specific description of related known technology may unnecessarily cloud the gist of this specification, the detailed description will be omitted. When "includes," "has," "is made," etc. are used in this specification, other parts may be added since "only" is not used. When a component is expressed in the singular, it includes the case where it includes a plural, unless otherwise expressly stated.

[0016] When interpreting elements, they are interpreted as including a margin of error even if there is no other explicit description.

[0017] When describing a positional relationship, for example when describing the positional relationship of two parts using "on top of," "at the top of," "at the bottom of," "next to," etc., since "immediately" or "directly" is not used, one or more other parts may be located between the two parts.

[0018] When an element or layer is referred to as "on" another element or layer, this includes the case where the element or layer is directly on top of the other element, or has other layers or elements interposed therebetween.

[0019] In addition, although the terms "first", "second" and the like are used to describe various components, these components are not limited by these terms. These terms are used merely to distinguish one component from another. Therefore, the first component referred to below may be the second component within the technical concept of this specification.

[0020] Like reference numbers refer to like elements throughout the specification.

[0021] The area and thickness of each component shown in the drawings are shown for convenience of explanation, and the present specification is not necessarily limited to the area and thickness of the components shown.

[0022] The features of the various embodiments of this specification may be partially or fully combined or combined with each other, may be technically interlocked and driven in various ways, and each embodiment may be implemented independently of each other or may be implemented together in a related relationship.

[0023] In the following, the invention will be explained with reference to the drawings.

[0024] 1 is a plan view of an organic light emitting display device according to an embodiment of the present invention, and FIG 2 is a cross-sectional view taken along line II-II' of FIG 1. As shown in FIG.

[0025] 1 and 2, a display device 100 includes a lower substrate 110, a transistor 120, an organic light emitting device 140, and an upper substrate 150. The display device 100 includes a lower substrate 110, a transistor 120, an organic light emitting device 140, and an upper substrate 150.

[0026] 1, the lower substrate 110 is configured to support and protect various components of the display device 100. The lower substrate 110 may be made of a plastic material having flexibility. The lower substrate 110 may also be made of an insulating material having transparency. For example, the lower substrate 110 may be made of transparent polyimide (PI).

[0027] The lower substrate 110 includes a display area AA and a non-display area NA.

[0028] The display area AA may be disposed in the center of the lower substrate 110, and may be an area where an image is displayed by the display device 100. Display elements and various driving elements for driving the display elements may be disposed in the display area AA. For example, the display elements may be formed of an organic light emitting element 140 including first electrodes 141-1, 141-2, and 141-3, a light emitting portion 142, and a second electrode 143. In addition, various driving elements such as transistors, capacitors, wiring, etc. for driving the display elements may be disposed in the display area AA.

[0029] A plurality of sub-pixels SP may be arranged in the display area AA. The plurality of sub-pixels SP may be an intersection region of a plurality of gate lines arranged in a first direction and a plurality of data lines arranged in a second direction different from the first direction. Here, the first direction may be the horizontal direction in FIG. 1, and the second direction may be the vertical direction in FIG. 1, but is not limited thereto. The plurality of sub-pixels SP may include a plurality of first sub-pixels SP1, a plurality of second sub-pixels SP2, and a plurality of third sub-pixels SP3 that emit light of different hues. For example, the plurality of first sub-pixels SP1 may be red sub-pixels, the plurality of second sub-pixels SP2 may be green sub-pixels, and the plurality of third sub-pixels SP3 may be blue sub-pixels. However, the plurality of sub-pixels SP may further include a fourth sub-pixel that is a white sub-pixel, but is not limited thereto.

[0030] The sub-pixels SP are the smallest units constituting the screen, and each of the sub-pixels SP may include an organic light emitting element 140 and a driving element. The driving element may include a switching transistor, a driving transistor, etc. The driving element may be electrically connected to signal wiring such as a gate wiring, a data wiring, etc., which are connected to a gate driver, a data driver, etc., disposed in the non-display area NA.

[0031] The non-display area NA may be disposed in a region around the lower substrate 110 and may be an area where no image is displayed. The non-display area NA may be disposed to surround the display area AA. Various components for driving the sub-pixels SP disposed in the display area AA may be disposed in the non-display area NA. For example, a driving IC, a driving circuit, signal wiring, a flexible film, etc. that supply signals for driving the sub-pixels SP may be disposed. The driving IC may include a gate driver, a data driver, etc. The driving IC and the driving circuit may be disposed in a GIP (Gate In Panel) type, a COF (Chip On Film) type, a TAB (Tape Automated Bonding) type, a TCP (Tape Carrier Package) type, a COG (Chip On Glass) type, etc.

[0032] In the following, the sub-pixels SP arranged in the display area AA of the display device 100 according to an embodiment of the present specification will be described in more detail with reference to FIG.

[0033] Referring to both Figures 1 and 2, a display device 100 according to one embodiment of the present specification may include a lower substrate 110, a buffer layer 111, a gate insulating layer 112, an interlayer insulating layer 113, a passivation layer 114, a transistor 120, an overcoating layer 115, an organic light-emitting element 140, a bank 116, an encapsulation layer 117, a color filter CF, a black matrix BM, an adhesive member 118 and an upper substrate 150.

[0034] 2, a buffer layer 111 is disposed on a lower substrate 110. The buffer layer 111 can improve adhesion between a layer formed on the buffer layer 111 and the lower substrate 110. In addition, the buffer layer 111 can block alkaline components, etc., flowing out from the lower substrate 110 and prevent moisture and / or oxygen, which has infiltrated from the outside of the lower substrate 110, from diffusing. The buffer layer 111 can be formed of a single layer or multiple layers of silicon nitride (SiNx) or silicon oxide (SiOx), but is not limited thereto. In addition, the buffer layer 111 can be omitted depending on the type and material of the lower substrate 110, the structure and type of the transistor 120, etc.

[0035] The transistor 120 is disposed on the buffer layer 111 and can drive the organic light emitting element 140. The transistor 120 can be disposed in each of the sub-pixels SP of the display area AA. The transistor 120 disposed in each of the sub-pixels SP can be used as a driving element of the display device 100. The transistor 120 may be, for example, a thin film transistor (TFT), an N-channel metal oxide semiconductor (NMOS) transistor, a P-channel metal oxide semiconductor (PMOS) transistor, a complementary metal oxide semiconductor (CMOS) transistor, a field effect transistor (FET), or the like, but is not limited thereto. In the following description, it is assumed that the transistor 120 is a thin film transistor, but is not limited thereto.

[0036] The transistor 120 includes an active layer 121, a gate electrode 122, a source electrode 123, and a drain electrode 124. The transistor 120 shown in Fig. 2 is a thin film transistor having a top gate structure in which the gate electrode 122 is disposed on the active layer 121. However, the present invention is not limited thereto, and the transistor 120 may be embodied as a thin film transistor having a bottom gate structure.

[0037] An active layer 121 of the transistor 120 is disposed on the buffer layer 111. The active layer 121 is a region where a channel is formed when the transistor 120 is driven. The active layer 121 may be formed of, but is not limited to, an oxide semiconductor, amorphous silicon (a-Si), polycrystalline silicon (poly-Si), an organic semiconductor, or the like.

[0038] A gate insulating layer 112 is disposed on the active layer 121. The gate insulating layer 112 may be composed of a single layer or multiple layers of inorganic silicon nitride (SiNx) or silicon oxide (SiOx). Contact holes are formed in the gate insulating layer 112 for the source electrode 123 and the drain electrode 124 to contact the source region and the drain region of the active layer 121, respectively. The gate insulating layer 112 may be formed over the entire surface of the lower substrate 110 as shown in FIG. 2, and may be patterned to have the same width as the gate electrode 122, but is not limited thereto.

[0039] The gate electrode 122 is disposed on the gate insulating layer 112. The gate electrode 122 is disposed on the gate insulating layer 112 so as to overlap a channel region of the active layer 121. The gate electrode 122 may be made of any one of various metal materials, for example, molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), an alloy of two or more of these, or a multilayer thereof, but is not limited thereto.

[0040] An interlayer insulating layer 113 is disposed on the gate electrode 122. The interlayer insulating layer 113 may be composed of a single layer or multiple layers of inorganic silicon nitride (SiNx) or silicon oxide (SiOx). Contact holes are formed in the interlayer insulating layer 113 to allow the source electrode 123 and the drain electrode 124 to contact the source region and the drain region of the active layer 121, respectively.

[0041] The source electrode 123 and the drain electrode 124 are disposed on the interlayer insulating layer 113. The source electrode 123 and the drain electrode 124 are electrically connected to the active layer 121 through contact holes in the gate insulating layer 112 and the interlayer insulating layer 113. The source electrode 123 and the drain electrode 124 may be made of any one of various metal materials, for example, molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or may be an alloy of two or more of these, or a multilayer thereof. However, the present invention is not limited thereto.

[0042] For convenience of explanation, FIG. 2 shows only driving transistors among various transistors 120 included in the display device 100, but other transistors such as switching transistors may also be arranged.

[0043] 2, a passivation layer 114 for protecting the transistor 120 is disposed on the transistor 120. A contact hole for exposing the drain electrode 124 of the transistor 120 is formed in the passivation layer 114. Although FIG. 2 shows that a contact hole for exposing the drain electrode 124 is formed in the passivation layer 114, a contact hole for exposing the source electrode 123 may be formed. The passivation layer 114 may be composed of a single layer or multiple layers of silicon nitride (SiNx) or silicon oxide (SiOx). However, the passivation layer 114 may be omitted depending on the embodiment.

[0044] An overcoating layer 115 for planarizing the top of the transistor 120 is disposed on the passivation layer 114. A contact hole for exposing the drain electrode 124 of the transistor 120 is formed in the overcoating layer 115. Although a contact hole for exposing the drain electrode 124 is formed in the overcoating layer 115 in FIG. 2, a contact hole for exposing the source electrode 123 may be formed in the overcoating layer 115. The overcoating layer 115 may be made of one of, but is not limited to, an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, an unsaturated polyester resin, a polyphenylene resin, a polyphenylene sulfide resin, a benzocyclobutene, and a photoresist.

[0045] 2, the overcoating layer 115 may include a first upper surface 115a and a second upper surface 115b inclined relative to the first upper surface 115a. The first upper surface 115a is a flat surface among the upper surfaces of the overcoating layer 115, and the second upper surface 115b is a curved surface among the upper surfaces of the overcoating layer 115.

[0046] Meanwhile, the second upper surface 115b may be disposed so as to be inclined in different directions in a region corresponding to one sub-pixel SP and another adjacent sub-pixel SP. Thus, a groove formed by the curved surfaces of the second upper surface 115b inclined in different directions meeting each other may be disposed in the overcoating layer 115 corresponding to a region between the sub-pixels SP. For example, the second upper surface 115b may be formed by removing a portion of the overcoating layer 115, but is not limited thereto.

[0047] 2, the organic light emitting device 140 is disposed on the overcoating layer 115. The organic light emitting device 140 includes first electrodes 141-1, 141-2, and 141-3 formed on the overcoating layer 115 and electrically connected to the drain electrode 124 of the transistor 120, a light emitting portion 142 disposed on the first electrodes 141-1, 141-2, and 141-3, and a second electrode 143 formed on the light emitting portion 142. Here, the first electrodes 141-1, 141-2, and 141-3 may be anode electrodes, and the second electrode 143 may be a cathode electrode.

[0048] The first electrodes 141-1, 141-2, and 141-3 are disposed on the overcoating layer 115 and are electrically connected to the drain electrode 124 of the transistor 120 through contact holes formed in the passivation layer 114 and the overcoating layer 115. Thus, the organic light emitting element 140 may be connected to the transistor 120.

[0049] In FIG. 2, the first electrodes 141-1, 141-2, and 141-3 are shown as being electrically connected to the drain electrode 124 of the transistor 120 through contact holes, but depending on the type of the transistor 120, the design method of the driving circuit, etc., the first electrodes 141-1, 141-2, and 141-3 may be configured to be electrically connected to the source electrode 123 of the transistor 120 through contact holes.

[0050] Referring to FIG. 2, the first electrodes 141-1, 141-2, and 141-3 of the sub-pixels SP each include a reflective layer 141M and a transparent conductive layer 141T disposed on the reflective layer 141M.

[0051] The reflective layer 141M is disposed on the overcoating layer 115 and is electrically connected to the drain electrode 124 through a contact hole formed in the passivation layer 114 and the overcoating layer 115. The reflective layer 141M is disposed to emit light emitted from the light emitting unit 142 toward the upper portion of the display device 100. For example, the reflective layer 141M may be made of a reflective metal material, but is not limited thereto.

[0052] Referring to FIG. 2, the reflective layer 141M includes a first portion 141M1 and a second portion 141M2.

[0053] The first portion 141M1 of the reflective layer 141M may be disposed on the first upper surface 115a of the overcoating layer 115 and may be disposed so as to be in contact with the transparent conductive layer 141T. Since the first portion 141M1 of the reflective layer 141M is disposed on the first upper surface 115a of the overcoating layer 115, which is made flat, the first portion 141M1 may have a planar shape that follows the shape of the first upper surface 115a.

[0054] The second portion 141M2 of the reflective layer 141M may be disposed on the second upper surface 151b of the overcoating layer 115 and spaced apart from the transparent conductive layer 141T. Since the second portion 141M2 of the reflective layer 141M is disposed on the second upper surface 151b including a curved surface, it may have a curved shape along the shape of the second upper surface 151b. Thus, the second portion 141M2 of the reflective layer 141M may be configured to reflect light toward another sub-pixel SP adjacent to the sub-pixel SP in which the corresponding reflective layer 141M is disposed.

[0055] Meanwhile, the second portion 141M2 of the reflective layer 141M may be a portion extending from the first portion 141M1 of the reflective layer 141M disposed on the first upper surface 115a of the overcoating layer 115 onto the second upper surface 115b of the overcoating layer 115. The first portion 141M1 and the second portion 141M2 of the reflective layer 141M may be integral, but are not limited thereto.

[0056] The transparent conductive layer 141T may be made of a transparent conductive material having a high work function to supply holes to the light emitting portion 142 and emit light emitted from the light emitting portion 142. For example, the first electrodes 141-1, 141-2, and 141-3 may be made of a transparent conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), zinc oxide (ZnO), and tin oxide (TO), but are not limited thereto.

[0057] Referring to FIG. 2, the transparent conductive layer 141T includes a first portion 141T1 and a second portion 141T2.

[0058] The first portion 141T1 of the transparent conductive layer 141T is disposed so as to be in contact with the reflective layer 141M. The first portion 141T1 of the transparent conductive layer 141T is disposed on the first portion 141M1 of the reflective layer 141M. The first portion 141T1 of the transparent conductive layer 141T can have a planar shape following the shape of the first portion 141M1 of the reflective layer 141M.

[0059] The second portion 141T2 of the transparent conductive layer 141T is disposed to be spaced apart from the reflective layer 141M. The bank 116 is disposed between the second portion 141M2 of the reflective layer 141M and the second portion 141T2 of the transparent conductive layer 141T. Thus, the second portion 141T2 of the transparent conductive layer 141T may be disposed to be spaced apart from the reflective layer 141M.

[0060] Meanwhile, the second portion 141T2 of the transparent conductive layer 141T may be a portion extending from the first portion 141T1 of the transparent conductive layer 141T disposed on the first portion 141M1 of the reflective layer 141M to the upper surface of the bank 116. The first portion 141T1 and the second portion 141T2 of the transparent conductive layer 141T may be integral with each other, but are not limited thereto.

[0061] 2, the second portion 141T2 of the transparent conductive layer 141T may be configured to receive light reflected from the second portion 141M2 of the reflective layer 141M of another subpixel SP adjacent to the subpixel SP in which the corresponding transparent conductive layer 141T is disposed. For example, the second light L2 emitted from the light emitting unit 142 in contact with the second portion 141T2 of the transparent conductive layer 141T may be reflected by the second portion 141M2 of the reflective layer 141M of another adjacent subpixel SP to reach the second portion 141T2 of the transparent conductive layer 141T, and may be configured to be output from the subpixel SP in which the corresponding transparent conductive layer 141T is disposed.

[0062] 2, the first electrodes 141-1, 141-2, 141-3 of the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3 each include a different number of transparent conductive layers 141T, and the transparent conductive layers 141T included in the first electrodes 141-1, 141-2, 141-3 each have a different thickness in the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3.

[0063] Specifically, the first electrode 141-1 of the first subpixel SP1 includes a reflective layer 141M, a second transparent conductive layer 141Tb on the reflective layer 141M, a third transparent conductive layer 141Tc on the second transparent conductive layer 141Tb, and a first transparent conductive layer 141Ta on the third transparent conductive layer 141Tc. The first electrode 141-2 of the second subpixel SP2 includes a reflective layer 141M, a second transparent conductive layer 141Tb on the reflective layer 141M, and a first transparent conductive layer 141Ta on the second transparent conductive layer 141Tb. The first electrode 141-3 of the third subpixel SP3 includes a reflective layer 141M and a first transparent conductive layer 141Ta on the reflective layer 141M.

[0064] Therefore, the first electrodes 141-1, 141-2, 141-3 may have different thicknesses in the first subpixel SP1, the second subpixel SP2, and the third subpixel SP3, respectively. For example, when the first subpixel SP1 is a red pixel, the second subpixel SP2 is a green pixel, and the third subpixel SP3 is a blue pixel, the thicknesses of the first electrodes 141-1, 141-2, 141-3 of the first subpixel SP1 may be thicker than the first electrodes 141-2, 141-3 of the second subpixel SP2 and the third subpixel SP3, and the first electrode 141-2 of the second subpixel SP2 may be thicker than the first electrode 141-3 of the third subpixel SP3, when the first subpixel SP1 is a red pixel, the second subpixel SP2 is a green pixel, and the third subpixel SP3 is a blue pixel. Therefore, the first electrodes 141-1, 141-2, and 141-3 may have a microcavity structure in which light of a wavelength corresponding to light emitted from each of the first subpixel SP1, the second subpixel SP2, and the third subpixel SP3 may be amplified.

[0065] Banks 116 are disposed on the first electrodes 141-1, 141-2, and 141-3 and the overcoating layer 115. The banks 116 may cover edges of the first electrodes 141-1, 141-2, and 141-3 of the organic light emitting elements 140 to define light emitting regions. The banks 116 are disposed between adjacent sub-pixels SP to reduce color mixing of light emitted from the organic light emitting elements 140 of the plurality of sub-pixels SP.

[0066] The bank 116 is disposed between the second portion 141M2 of the reflective layer 141M, which is the edge of the first electrodes 141-1, 141-2, and 141-3, and the second portion 141T2 of the transparent conductive layer 141T, between the subpixels SP.

[0067] 2, the upper surface of the bank 116 is arranged to include a curved surface. The transparent conductive layer 141T arranged on the upper surface of the bank 116 may be arranged to have a curved surface along the upper surface of the bank 116. Thus, the second portion 141T2 of the transparent conductive layer 141T may be configured to receive light reflected from the second portion 141M2 of the reflective layer 141M of another subpixel SP adjacent to the subpixel SP in which the transparent conductive layer 141T is arranged.

[0068] The bank 116 may be made of an organic material, for example, but not limited to, a polyimide resin, an acryl resin, or a benzocyclobutene resin.

[0069] The light emitting unit 142 is disposed on the transparent conductive layer 141T of the first electrodes 141-1, 141-2, and 141-3 and the bank 116. For example, the light emitting unit 142 may be a light emitting layer that emits light of any one of red, green, blue, and white. The light emitting unit 142 may further include various layers such as, but not limited to, a hole transport layer, a hole injection layer, a hole blocking layer, an electron injection layer, an electron blocking layer, and an electron transport layer.

[0070] The second electrode 143 is disposed on the light emitting unit 142. The second electrode 143 supplies electrons to the light emitting unit 142. The second electrode 143 may be made of a conductive material with a low work function. The second electrode 143 may be configured to emit light emitted from the light emitting unit 142 to the upper part of the display device 100. For example, the second electrode 143 may be made of a transparent conductive material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), or an opaque conductive material such as titanium (Ti), gold (Au), silver (Ag), copper (Cu), or an alloy thereof, but is not limited thereto.

[0071] Meanwhile, although not shown in the drawing, an inorganic insulating layer for protecting the second electrode 143 may be further disposed on the second electrode 143. For example, the inorganic insulating layer may be composed of a single layer or multiple layers of silicon nitride (SiNx) or silicon oxide (SiOx), but is not limited thereto.

[0072] Referring to FIG. 2, the encapsulation layer 117 is disposed on the organic light emitting element 140. The encapsulation layer 117 can cover the organic light emitting element 140. The encapsulation layer 117 can protect the organic light emitting element 140 from external moisture, oxygen, impact, and the like. The encapsulation layer 117 can be formed by alternately laminating a plurality of inorganic layers and a plurality of organic layers. For example, the inorganic layer can be made of an inorganic material such as silicon nitride (SiNx), silicon oxide (SiOx), aluminum oxide (AlOx), and the like, and the organic layer can be made of an epoxy-based or acrylic-based polymer, but is not limited thereto.

[0073] Referring to FIG. 2, a color filter CF and a black matrix BM are disposed on the sealing layer 117.

[0074] A color filter CF may be disposed in each of the sub-pixels SP, and a black matrix BM may be disposed at the boundary between the sub-pixels SP, such that the black matrix BM separates the sub-pixels SP and the color filters CF disposed in each sub-pixel SP, thereby reducing color mixing between the sub-pixels SP.

[0075] For example, when the light emitted from the light emitting unit 142 is white light, the color filter CF converts the light emitted from the corresponding sub-pixel SP into red light, green light, and blue light, respectively. For example, the first color filter CF1 disposed in the first sub-pixel SP1, which is a red sub-pixel, may be a red color filter. In addition, the second color filter CF2, which is a green color filter, may be disposed in the second sub-pixel SP2, which is a green sub-pixel, and the third color filter CF3, which is a blue color filter, may be disposed in the third sub-pixel SP3, which is a blue sub-pixel, but is not limited thereto.

[0076] For example, the black matrix BM may be formed of a chromium (Cr) or other opaque metal film, or may be formed of a resin, but is not limited thereto.

[0077] The upper substrate 150 is disposed on the color filter CF and the black matrix BM. The upper substrate 150, together with the encapsulation layer 117, can protect the organic light emitting device 140 from external moisture, oxygen, impact, etc. For example, the upper substrate 150 may be made of a transparent insulating material, and the display device 100 may be configured as a top emission type display device 100, but is not limited thereto.

[0078] 2, an adhesive member 118 is disposed between the color filter CF and the black matrix BM and the upper substrate 150. The adhesive member 118 can adhere the color filter CF and the black matrix BM to the upper substrate 150. The adhesive member 118 is made of a material having adhesive properties and may be a thermosetting or natural curing adhesive. For example, the adhesive member 118 may be made of an OCA (Optical Clear Adhesive), a PSA (Pressure Sensitive Adhesive), etc., but is not limited thereto.

[0079] In the display device 100 according to an embodiment of the present specification, the thicknesses of the first electrodes 141-1, 141-2, and 141-3 of the sub-pixels SP emitting different colors may be arranged to be different from each other in order to improve the color viewing angle characteristics. Thus, each of the sub-pixels SP may have a micro-cavity structure corresponding to the light emitted from the corresponding sub-pixel SP. The micro-cavity structure is a structure in which light of a specific wavelength is amplified by constructive interference as light is repeatedly reflected between the first electrodes 141-1, 141-2, and 141-3 and the second electrode 143, which are separated by a specific optical length. Therefore, the light emitted from each of the sub-pixels SP may be amplified, and the color viewing angle characteristics of the display device 100 may be improved.

[0080] That is, one subpixel SP may be configured to have a microcavity structure corresponding to light emitted from the corresponding subpixel SP due to a specific interval between the first electrode 141-1, 141-2, 141-3 of the corresponding subpixel SP and the second electrode 143. In this case, the specific interval between the first electrode 141-1, 141-2, 141-3 and the second electrode 143 that allows the subpixel SP to have a microcavity structure may be defined as, for example, a microcavity interval.

[0081] Referring to FIG. 2, the distance between the first portion 141M1 of the reflective layer 141M arranged in one subpixel SP and the second electrode 143 may be disposed at a first microcavity distance MCI1 in which light of a wavelength corresponding to the light emitted from the corresponding subpixel SP may be amplified.

[0082] Therefore, the first light L1, which is light emitted from the light-emitting portion 142 in contact with the first portion 141T1 of the transparent conductive layer 141T in one subpixel SP, can be repeatedly reflected between the first portion 141M1 of the reflective layer 141M arranged in the same subpixel SP as the corresponding transparent conductive layer 141T and the second electrode 143 due to the first microcavity spacing MCI1, and can be amplified by constructive interference.

[0083] Referring to FIG. 2, the distance between the second electrode 143 arranged in one subpixel SP and the second portion 141M2 of the reflective layer 141M arranged in another subpixel SP adjacent to the corresponding subpixel may be disposed as a second microcavity distance MCI2 in which light of a wavelength corresponding to the light emitted from the corresponding subpixel SP may be amplified.

[0084] Therefore, the second light L2, which is light emitted from the light-emitting portion 142 in contact with the second portion 141T2 of the transparent conductive layer 141T, can be repeatedly reflected between the second electrode 143 arranged in one subpixel SP and the second portion 141M2 of the reflective layer 141M arranged in another subpixel SP adjacent to the corresponding subpixel SP, and can be amplified by constructive interference.

[0085] In the display device 100 according to an embodiment of the present specification, the first microcavity interval MCI1 may be different from the second microcavity interval MCI2. For example, the first microcavity interval MCI1 may be smaller than the second microcavity interval MCI2 as shown in Fig. 2. Thus, the second light L2 amplified by the second microcavity interval MCI2, which is larger than the first microcavity interval MCI1, travels through an optical path with a larger interval compared to the first light L1 amplified by the first microcavity interval MCI1, and therefore may have a lower optical intensity than the first light L1.

[0086] Hereinafter, the light intensity depending on the viewing angle of the first light L1 and the second light L2 of the display device 100 according to an embodiment of the present specification will be described in detail with reference to FIG.

[0087] 3 is a graph showing the light intensity depending on the viewing angle of the first light L1 and the second light L2 of a display device according to an embodiment of the present specification. In the graph of FIG. 3, the X-axis is the viewing angle (θ) of the first light L1 and the second light L2 when the central viewing angle of the first light L1 and the second light L2 is set to 0°, and the light intensity is the light intensity depending on the viewing angle (θ) of the first light L1 and the second light L2 based on the light intensity at the central viewing angle (0°) of the first light L1 being set to 100.

[0088] 3, the light intensity at the central viewing angle (0°) of the first light L1, which is light emitted from the light emitting unit 142 in contact with the first portion 141T1 of the transparent conductive layer 141T, is 100. Thus, the first light L1 has the highest light intensity at the central viewing angle (0°).

[0089] It can be seen that the light intensity of the first light L1 decreases as the viewing angle (θ) changes from the central viewing angle (0°), and the light intensity of the first light L1 at viewing angles of -90° and 90° decreases to 0.

[0090] 3, the second light L2 emitted from the light emitting portion 142 in contact with the second portion 141T2 of the transparent conductive layer 141T has a light intensity of 60 at the central viewing angle (0°), which is lower than the light intensity of the first light L1 at the central viewing angle (0°). That is, the intensity of the first light L1 at the central viewing angle (0°) may be greater than the intensity of the second light L2 at the central viewing angle (0°).

[0091] The second light L2 has a reduced intensity as the viewing angle (θ) changes from the central viewing angle (0°), and the light intensity of the second light L2 at viewing angles of −90° and 90° is reduced to 40.

[0092] Meanwhile, in a graph showing a distribution of a specific wavelength, the width of the distribution corresponding to 1 / 2 of the maximum value may be referred to as a full width at half maximum (FWHM). In this regard, referring to FIG. 3, it can be seen that the full width at half maximum FWHM1 of the first light L1, which is the width of the distribution corresponding to 1 / 2 of the maximum intensity of the first light L1, is smaller than the full width at half maximum FWHM2 of the second light L2, which is the width of the distribution corresponding to 1 / 2 of the maximum intensity of the second light L2. Specifically, in a distribution where the intensity of light corresponding to 1 / 2 of the maximum intensity of the first light L1 and the second light L2 is 50, the full width at half maximum FWHM1 of the first light L1 may be smaller than the full width at half maximum FWHM2 of the second light L2.

[0093] On the other hand, as the viewing angle changes from the central viewing angle (0°) to -90° and 90° viewing angles, the first light L1 has a light intensity change value of 100 and the second light L2 has a light intensity change value of 20, which shows that the second light L2 has a smaller change in light intensity due to the change in viewing angle than the first light L1.

[0094] A display device having a microcavity structure has a structure in which light is repeatedly reflected between a first electrode and a second electrode set at a microcavity interval, and the light is amplified by constructive interference. However, since light may have a stronger linearity as its intensity increases, the linearity increases as the intensity of light increases, and the viewing angle at which the light can be sensed may become narrower. In a display device having a microcavity structure, light is amplified and high-intensity light is output, so the viewing angle at which the light output from the display device can be sensed may become narrower. That is, the light output from the display device may have a reduced light intensity as the viewing angle changes from the central viewing angle. Thus, as the viewing angle changes from the central viewing angle of the light output from the display device, a problem may occur in which the luminance of the output light decreases or the color coordinate changes. In addition, a problem may occur in which the display quality of the display device decreases due to the changes in luminance and color coordinate caused by such a change in the viewing angle.

[0095] Therefore, in the display device 100 according to one embodiment of the present specification, a portion of the light emitted from one sub-pixel SP is configured to improve the light intensity at a central viewing angle (0°), and another portion is configured to minimize the change in light intensity due to a change in the viewing angle (θ), thereby improving the light efficiency of the display device 100 while minimizing the decrease in brightness and the change in color coordinate due to the viewing angle.

[0096] Specifically, in the display device 100 according to an embodiment of the present specification, the first light L1 emitted from the light emitting unit 142 in contact with the first portion 141T1 of the transparent conductive layer 141T is configured to be amplified by a first microcavity interval MCI1, which is the interval between the first portion 141M1 of the reflective layer 141M disposed in the corresponding subpixel SP and the second electrode 143. And, the second light L2 emitted from the light emitting unit 142 in contact with the second portion 141T2 of the transparent conductive layer 141T is configured to be amplified by a second microcavity interval MCI2, which is the interval between the second electrode 143 and the second portion 141M2 of the reflective layer 141M disposed in another subpixel SP adjacent to the corresponding subpixel. At this time, the second light L2 amplified by the second microcavity interval MCI2, which is larger than the first microcavity interval MCI1, travels through a light path with a larger distance than the first light L1 amplified by the first microcavity interval MCI1, and may have a lower light intensity than the first light L1. Therefore, the first light L1 having a relatively higher light intensity is configured to improve the linearity of light and improve the light intensity at the central viewing angle (0°). The second light L2 having a relatively lower light intensity is configured to reduce the linearity and be sensed at a relatively wider viewing angle, and thus to minimize the change in light intensity due to the change in viewing angle (θ). Thus, the first light L1 increases the intensity of light output from the sub-pixel SP to improve the light efficiency of the display device 100, and the second light L2 is configured to compensate for the change in light intensity of the first light L1 due to the change in viewing angle, and may be configured to minimize the decrease in luminance and the change in color coordinates due to the viewing angle. Therefore, in the display device 100 according to an embodiment of the present specification, a part of the light emitted from one sub-pixel SP may be configured to improve the light intensity at a central viewing angle (0°), and another part may be configured to minimize the change in light intensity due to the change in viewing angle (θ). Thus, the display quality of the display device 100 may be improved by improving the light efficiency of the display device 100 and minimizing the brightness reduction and color coordinate change due to the viewing angle, and a highly efficient and low-power display device 100 may be provided.

[0097] In the following, a display device according to another embodiment of the present specification will be described in detail with reference to Figs. 4a and 4b.

[0098] Fig. 4a is a cross-sectional view of a display device according to another embodiment of the present specification. Fig. 4b is an enlarged view of region IVb of Fig. 4a. The display device 400 of Fig. 4a and Fig. 4b is substantially the same as the display device 100 of Figs. 1 to 3, except for the overcoating layer 415, the first electrodes 441-1, 441-2, 441-3, and the bank 116, and therefore will not be described again.

[0099] 4a, the overcoating layer 415 may include a first upper surface 415a and a second upper surface 415b inclined with respect to the first upper surface 415a. In this case, the first upper surface 415a is a flat surface among the upper surfaces of the overcoating layer 415, and the second upper surface 415b is a surface including a flat surface inclined with respect to the first upper surface 415a.

[0100] Meanwhile, the second upper surface 415b may be disposed so as to be inclined in different directions in a region corresponding to one sub-pixel SP and another adjacent sub-pixel SP, respectively. Thus, a groove formed by meeting planes inclined in different directions of the second upper surface 415b may be disposed in the overcoating layer 415 corresponding to a region between the sub-pixels SP.

[0101] First electrodes 441-1, 441-2, and 441-3 are disposed on the overcoating layer 415. The first electrodes 441-1, 441-2, and 441-3 include a reflective layer 441M disposed on the overcoating layer 415 and a transparent conductive layer 441T disposed on the reflective layer 441M.

[0102] The reflective layer 441M includes a first portion 441M1 disposed on the first upper surface 415a of the overcoating layer 415 and a second portion 441M2 disposed on the second upper surface 415b of the overcoating layer 415. The first portion 441M1 of the reflective layer 141M is disposed on the first upper surface 415a of the overcoating layer 415 and may have a planar shape along the shape of the first upper surface 115a. The second portion 441M2 of the reflective layer 141M is disposed on the second upper surface 415b, which is a plane inclined with respect to the first upper surface 415a, and may have a planar shape inclined with respect to the first upper surface 415a along the second upper surface 415b. Thus, the second portion 441M2 of the reflective layer 441M may be configured to reflect light toward another sub-pixel SP adjacent to the sub-pixel SP in which the corresponding reflective layer 441M is disposed.

[0103] The transparent conductive layer 441T includes a first portion 141T1 and a second portion 141T2. The first portion 141T1 of the transparent conductive layer 441T is disposed on the first portion 441M1 of the reflective layer 441M. The first portion 441T1 of the transparent conductive layer 441T may have a planar shape along the shape of the first portion 441M1 of the reflective layer 441M. The second portion 441T2 of the transparent conductive layer 441T may be disposed to be spaced apart from the reflective layer 441M. Referring to FIG. 4a, the second portion 441T2 of the transparent conductive layer 441T disposed in one subpixel SP among the plurality of subpixels SP may be disposed in parallel with the second portion 441M2 of the reflective layer 441M disposed in another adjacent subpixel SP.

[0104] The bank 416 is disposed between the second portion 441M2 of the reflective layer 441M and the second portion 441T2 of the transparent conductive layer 441T. Referring to Fig. 4a, the upper surface of the bank 416 may be disposed to include a plane inclined with respect to the first upper surface 415a of the overcoating layer 415. Thus, the second portion 441T2 of the transparent conductive layer 441T disposed on the inclined upper surface of the bank 416 may be disposed parallel to the second portion 441M2 of the reflective layer 441M disposed in another subpixel SP adjacent to the corresponding subpixel SP.

[0105] 4a, the upper surface of the bank 416 may be arranged in a tapered shape, including a plane inclined relative to the first upper surface 415a of the overcoating layer 415. For example, the bank 416 may be made of an inorganic material whose shape is easily controlled, but is not limited thereto.

[0106] In this case, the inclination of the second upper surface 415b of the overcoating layer 415 and the upper surface of the bank 416 may be 30° to 45°, but is not limited thereto. For example, if the inclination of the second upper surface of the overcoating layer and the upper surface of the bank exceeds 45°, the thickness of the light emitting part made of an organic material disposed on the upper part of the bank may be unevenly arranged due to the upper surface of the bank having a high inclination. If the inclination of the second upper surface of the overcoating layer and the upper surface of the bank is less than 30°, the second part of the reflective layer may be difficult to be configured to reflect light toward other sub-pixels adjacent to the sub-pixel in which the reflective layer is disposed. Therefore, the inclination of the second upper surface 415b of the overcoating layer 415 and the upper surface of the bank 416 is set to 30° to 45°, so that the thickness of the light emitting part 142 disposed on the upper part of the bank 416 may be uniformly arranged, and the second part 441M2 of the reflective layer 441M may be configured to reflect light toward other adjacent sub-pixels SP, but is not limited thereto.

[0107] Referring to FIG. 4a, the distance between the first portion 441M1 of the reflective layer 441M arranged in one subpixel SP and the second electrode 143 may be arranged to be a first microcavity distance MCI1 in which light of a wavelength corresponding to the light emitted from the corresponding subpixel SP may be amplified.

[0108] Therefore, the first light L1, which is light emitted from the light-emitting portion 142 in contact with the first portion 441T1 of the transparent conductive layer 441T in one subpixel SP, can be repeatedly reflected between the first portion 441M1 of the reflective layer 441M arranged in the same subpixel SP as the corresponding transparent conductive layer 441T and the second electrode 143 due to the first microcavity spacing MCI1, and can be amplified by constructive interference.

[0109] Referring to FIG. 4a, the distance between the second electrode 143 arranged in one subpixel SP and the second portion 441M2 of the reflective layer 441M arranged in another subpixel SP adjacent to the corresponding subpixel may be disposed as a second microcavity distance MCI2 in which light of a wavelength corresponding to the light emitted from the corresponding subpixel SP may be amplified.

[0110] Therefore, the second light L2, which is light emitted from the light-emitting portion 142 in contact with the second portion 441T2 of the transparent conductive layer 441T, can be repeatedly reflected between the second electrode 143 arranged in one subpixel SP and the second portion 441M2 of the reflective layer 441M arranged in another subpixel SP adjacent to the corresponding subpixel SP, and can be amplified by constructive interference.

[0111] In the following, together with reference to FIG. 4b, an exemplary method for setting the second microcavity spacing MCI2 will be described in detail.

[0112] In FIG. 4b, R1 is the width of the area in which the second upper surface 415b of the overcoating layer 415 corresponding to any one of the subpixels SP among the multiple subpixels SP is disposed, R2 is the height of the area in which the second upper surface 415b is disposed, R3 is the width of the second upper surface 415b, and θ is the inclination of the second upper surface 415b.

[0113] 4b, the inclination θ of the second upper surface 415b and the width R3 of the second upper surface 415b can be set through the width R1 of the region where the second upper surface 415b is disposed and the height R2 of the region where the second upper surface 415b is disposed. For example, when the inclination θ of the second upper surface 415b is set to 30° and the width R3 of the second upper surface 415b is set to 1408 nm, the width R1 of the region where the second upper surface 415b is disposed can be calculated to be 1219 nm, which is the value of 1408 nm × cos30°, and the height R2 of the region where the second upper surface 415b is disposed can be calculated to be 704 nm, which is the value of 1408 nm × sin30°. Thus, by removing a portion of the upper surface of the overcoating layer 415 to a width of 1219 nm and a height of 704 nm, the inclination θ of the second upper surface 415b can be set to 30°, and the width R3 of the second upper surface 415b can be set to 1408 nm.

[0114] The second microcavity interval MCI2 can be set based on the inclination θ of the second upper surface 415b and the width R3 of the second upper surface 415b. For example, in a display device in which the transparent conductive layer 441T has a thickness of 84 nm, the light emitting portion 142 has a thickness of 300 nm, and the inclination θ of the second upper surface 415b is 30°, when the second microcavity interval MCI2 is to be set to 1792 nm, the width R3 of the second upper surface 415b, which allows the second microcavity interval MCI2 to be set to 1408 nm, which is the length obtained by subtracting the thickness of the transparent conductive layer 441T and the thickness of the light emitting portion 142 from the second microcavity interval MCI2, can be calculated as 1626 nm, which is the value of (1792 nm-84 nm-300 nm)×sec30°.

[0115] In a display device 400 according to another embodiment of the present specification, a portion of the light emitted from one sub-pixel SP may be configured to improve the light intensity at a central viewing angle (0°), and another portion may be configured to minimize the change in light intensity due to a change in the viewing angle (θ), thereby improving the light efficiency of the display device 400 while minimizing the decrease in brightness and the change in color coordinate due to the viewing angle.

[0116] Specifically, in the display device 400 according to another embodiment of the present specification, the first light L1 emitted from the light emitting unit 142 in contact with the first portion 441T1 of the transparent conductive layer 441T is configured to be amplified by a first microcavity interval MCI1, which is the interval between the first portion 441M1 of the reflective layer 441M disposed in the corresponding subpixel SP and the second electrode 143. And, the second light L2 emitted from the light emitting unit 142 in contact with the second portion 441T2 of the transparent conductive layer 441T is configured to be amplified by a second microcavity interval MCI2, which is the interval between the second electrode 143 and the second portion 441M2 of the reflective layer 441M disposed in another subpixel SP adjacent to the corresponding subpixel. At this time, the second light L2 amplified by the second microcavity interval MCI2, which is larger than the first microcavity interval MCI1, travels through a light path with a larger distance than the first light L1 amplified by the first microcavity interval MCI1, and may have a lower light intensity than the first light L1. Therefore, the first light L1 having a relatively higher light intensity is configured to improve the linearity of light and improve the light intensity at the central viewing angle (0°). The second light L2 having a relatively lower light intensity is configured to reduce the linearity and be sensed at a relatively wider viewing angle, and thus to minimize the change in light intensity due to the change in viewing angle (θ). Thus, the first light L1 increases the intensity of light output from the sub-pixel SP to improve the light efficiency of the display device 400, and the second light L2 is configured to compensate for the change in light intensity due to the change in viewing angle of the first light L1, and may be configured to minimize the decrease in luminance and the change in color coordinates due to the viewing angle. Therefore, in the display device 400 according to another embodiment of the present specification, a part of the light emitted from one sub-pixel SP may be configured to improve the light intensity at a central viewing angle (0°), and another part may be configured to minimize the change in light intensity due to a change in the viewing angle (θ). Thus, the display quality of the display device 400 may be improved by improving the light efficiency of the display device 400 and minimizing the brightness reduction and color coordinate change due to the viewing angle, and a highly efficient and low-power display device 400 may be provided.

[0117] Hereinafter, a display device according to still another embodiment of the present specification will be described in detail with reference to FIG.

[0118] 5 is a cross-sectional view of a display device according to another embodiment of the present disclosure. The display device 500 of FIG. 5 is substantially the same as the display device 100 of FIG. 1 to FIG. 3 except for an overcoating layer 515, first electrodes 541-1, 541-2, 541-3, and a bank 516, and therefore will not be described again.

[0119] 5, an overcoating layer 515 having a flat upper surface is disposed between the transistors 120 and the first electrodes 541-1, 541-2, and 541-3. Thus, the upper surface of the overcoating layer 515 and the lower surfaces of the first electrodes 541-1, 541-2, and 541-3 may all be disposed on the same plane.

[0120] The first electrodes 541-1, 541-2, 541-3 include a reflective layer 541M disposed on the overcoating layer 515 and a transparent conductive layer 541T disposed on the reflective layer 541M.

[0121] 5, the reflective layer 541M includes a first portion 541M1 in contact with the transparent conductive layer 541T and a second portion 541M2 spaced apart from the transparent conductive layer 541T. The transparent conductive layer 541T includes a first portion 541T1 in contact with the reflective layer 541M and a second portion 541T2 spaced apart from the reflective layer 541M. That is, the first portion 541M1 of the reflective layer 541M may be in contact with the first portion 541T1 of the transparent conductive layer 541T, and the second portion 541M2 of the reflective layer 541M may be spaced apart from the transparent conductive layer 541T.

[0122] The bank 516 is disposed between the second portion 541M2 of the reflective layer 541M and the second portion 541T2 of the transparent conductive layer 541T. Thus, the second portion 541M2 of the reflective layer 541M and the second portion 541T2 of the transparent conductive layer 541T may be disposed to be spaced apart from each other at a regular interval.

[0123] Meanwhile, the bank 516 may be configured to form a second microcavity interval MCI2 together with the second portion 541T2 of the transparent conductive layer 541T and the light emitting portion 142. In this case, the refractive index of the bank 516 may be 1.8 or more. For example, when the refractive index of the material forming the transparent conductive layer 541T and the light emitting portion 142 disposed on the bank 516 is 1.7 to 1.8, the bank 516 may be made of a material having a refractive index of 1.8 or more, but is not limited thereto.

[0124] Referring to FIG. 5, the distance between the first portion 541M1 of the reflective layer 541M arranged in one subpixel SP and the second electrode 143 may be arranged to be a first microcavity distance MCI1 in which light of a wavelength corresponding to the light emitted from the corresponding subpixel SP can be amplified.

[0125] Therefore, the first light L1, which is light emitted from the light-emitting portion 142 in contact with the first portion 541T1 of the transparent conductive layer 541T in one subpixel SP, can be repeatedly reflected between the first portion 541M1 of the reflective layer 541M arranged in the same subpixel SP as the corresponding transparent conductive layer 541T and the second electrode 143 by the first microcavity spacing MCI1, and can be amplified by constructive interference.

[0126] Referring to FIG. 5, the distance between the second portion 541M2 of the reflective layer 541M arranged in one subpixel SP and the second electrode 143 may be disposed at a second microcavity distance MCI2 in which light of a wavelength corresponding to the light emitted from the corresponding subpixel SP may be amplified.

[0127] Therefore, the second light L2, which is light emitted from the light-emitting section 142 in contact with the second portion 541T2 of the transparent conductive layer 541T, can be repeatedly reflected between the second portion 541M2 of the reflective layer 541M arranged in one subpixel SP and the second electrode 143, and can be amplified by constructive interference.

[0128] In a display device 500 according to another embodiment of the present specification, a portion of the light emitted from one sub-pixel SP may be configured to improve the light intensity at a central viewing angle (0°), and another portion may be configured to minimize the change in light intensity due to a change in the viewing angle (θ), thereby improving the light efficiency of the display device 500 while minimizing the decrease in brightness and the change in color coordinate due to the viewing angle.

[0129] Specifically, in the display device 500 according to another embodiment of the present specification, a first light L1 emitted from the light emitting unit 142 in contact with the first portion 541T1 of the transparent conductive layer 541T is configured to be amplified by a first microcavity interval MCI1, which is the interval between the first portion 541M1 of the reflective layer 541M arranged in a corresponding subpixel SP and the second electrode 143. And, a second light L2 emitted from the light emitting unit 142 in contact with the second portion 541T2 of the transparent conductive layer 541T is configured to be amplified by a second microcavity interval MCI2, which is the interval between the second portion 541M2 of the reflective layer 541M arranged in one subpixel SP and the second electrode 143.

[0130] At this time, the second light L2 amplified by the second microcavity interval MCI2, which is larger than the first microcavity interval MCI1, travels through a light path with a larger distance than the first light L1 amplified by the first microcavity interval MCI1, and may have a lower light intensity than the first light L1. Therefore, the first light L1 having a relatively higher light intensity is configured to improve the linearity of light and improve the light intensity at the central viewing angle (0°). The second light L2 having a relatively lower light intensity is configured to reduce the linearity and be sensed at a relatively wider viewing angle, and therefore may be configured to minimize the change in light intensity due to the change in viewing angle (θ). Thus, the first light L1 increases the intensity of light output from the sub-pixel SP to improve the light efficiency of the display device 500, and the second light L2 is configured to compensate for the change in light intensity due to the change in viewing angle of the first light L1, and may be configured to minimize the decrease in luminance and the change in color coordinates due to the viewing angle. Therefore, in the display device 500 according to another embodiment of the present specification, a part of the light emitted from one sub-pixel SP may be configured to improve the light intensity at the central viewing angle (0°), and another part may be configured to minimize the change in light intensity due to the change in the viewing angle (θ). Thus, the display quality of the display device 500 may be improved by improving the light efficiency of the display device 500 and minimizing the brightness reduction and color coordinate change due to the viewing angle, and a highly efficient and low-power display device 500 may be provided.

[0131] Hereinafter, a display device according to still another embodiment of the present specification will be described in detail with reference to FIG.

[0132] 6 is a cross-sectional view of a display device according to another embodiment of the present disclosure. The display device 600 of FIG. 6 is substantially the same as the display device 500 of FIG. 5, except for the first electrodes 641-1, 641-2, 641-3, the additional pattern AP, and the bank 616, and therefore will not be described again.

[0133] Referring to FIG. 6, the first electrodes 641-1, 641-2, 641-3 include a reflective layer 641M disposed on the overcoating layer 515 and a transparent conductive layer 641T disposed on the reflective layer 641M.

[0134] 6, the reflective layer 641M includes a first portion 641M1 in contact with the transparent conductive layer 641T and a second portion 641M2 spaced apart from the transparent conductive layer 641T. The transparent conductive layer 641T includes a first portion 641T1 in contact with the reflective layer 641M and a second portion 641T2 spaced apart from the reflective layer 641M. That is, the first portion 641M1 of the reflective layer 641M may be in contact with the first portion 641T1 of the transparent conductive layer 641T, and the second portion 641M2 of the reflective layer 641M may be spaced apart from the transparent conductive layer 641T.

[0135] 6, an additional pattern AP is disposed between the second portion 641M2 of the reflective layer 641M and the second portion 641T2 of the transparent conductive layer 641T. The additional pattern AP may be configured to form a second microcavity interval MCI2 together with the second portion 641T2 of the transparent conductive layer 641T and the light emitting portion 142. Thus, the second portion 641M2 of the reflective layer 641M and the second portion 641T2 of the transparent conductive layer 641T may be disposed to be spaced apart from each other by a certain distance.

[0136] Meanwhile, the additional pattern AP may be made of the same material as the transparent conductive layer 641T. Thus, since the additional pattern AP has the same refractive index as the transparent conductive layer 641T, it is possible to minimize distortion of the second microcavity interval MCI2 due to a refractive index difference between the additional pattern AP and the transparent conductive layer 641T. In this case, since the transparent conductive layer 641T may be formed after the additional pattern AP is disposed, for example, an interface may exist between the additional pattern AP and the transparent conductive layer 641T, but is not limited thereto.

[0137] 6, the bank 616 may be disposed between a part of the second portion 641T2 of the transparent conductive layer 641T and the light emitting portion 142. The bank 616 may be disposed to surround the side surfaces of the first electrodes 641-1, 641-2, and 641-3 and the side surface of the additional pattern AP.

[0138] Referring to FIG. 6, the distance between the first portion 641M1 of the reflective layer 641M arranged in one subpixel SP and the second electrode 143 may be disposed at a first microcavity distance MCI1 in which light of a wavelength corresponding to the light emitted from the corresponding subpixel SP may be amplified.

[0139] Therefore, the first light L1, which is light emitted from the light-emitting portion 142 in contact with the first portion 641T1 of the transparent conductive layer 641T in one subpixel SP, can be repeatedly reflected between the first portion 641M1 of the reflective layer 641M arranged in the same subpixel SP as the corresponding transparent conductive layer 641T and the second electrode 143 due to the first microcavity spacing MCI1, and can be amplified by constructive interference.

[0140] Referring to FIG. 6, the distance between the second portion 641M2 of the reflective layer 641M arranged in one subpixel SP and the second electrode 143 may be disposed at a second microcavity distance MCI2 in which light of a wavelength corresponding to the light emitted from the corresponding subpixel SP may be amplified.

[0141] Therefore, the second light L2, which is light emitted from the light-emitting section 142 in contact with the second portion 641T2 of the transparent conductive layer 641T, can be repeatedly reflected between the second portion 641M2 of the reflective layer 641M arranged in one subpixel SP and the second electrode 143, and can be amplified by constructive interference.

[0142] In a display device 600 according to another embodiment of the present specification, a portion of the light emitted from one sub-pixel SP may be configured to improve the light intensity at a central viewing angle (0°), and another portion may be configured to minimize the change in light intensity due to a change in the viewing angle (θ), thereby improving the light efficiency of the display device 600 while minimizing the decrease in brightness and the change in color coordinate due to the viewing angle.

[0143] Specifically, in the display device 600 according to another embodiment of the present specification, a first light L1 emitted from the light emitting unit 142 in contact with the first portion 641T1 of the transparent conductive layer 641T is configured to be amplified by a first microcavity interval MCI1, which is the interval between the first portion 641M1 of the reflective layer 641M arranged in a corresponding subpixel SP and the second electrode 143. And, a second light L2 emitted from the light emitting unit 142 in contact with the second portion 641T2 of the transparent conductive layer 641T is configured to be amplified by a second microcavity interval MCI2, which is the interval between the second portion 641M2 of the reflective layer 641M arranged in one subpixel SP and the second electrode 143.

[0144] At this time, the second light L2 amplified by the second microcavity interval MCI2, which is larger than the first microcavity interval MCI1, travels through a light path with a larger distance than the first light L1 amplified by the first microcavity interval MCI1, and may have a lower light intensity than the first light L1. Therefore, the first light L1 having a relatively higher light intensity is configured to improve the linearity of light and improve the light intensity at the central viewing angle (0°). The second light L2 having a relatively lower light intensity is configured to reduce the linearity and be sensed at a relatively wider viewing angle, and thus to minimize the change in light intensity due to the change in viewing angle (θ). Thus, the first light L1 increases the intensity of light output from the sub-pixel SP to improve the light efficiency of the display device 600, and the second light L2 is configured to compensate for the change in light intensity due to the change in viewing angle of the first light L1, and may be configured to minimize the decrease in luminance and the change in color coordinates due to the viewing angle. Therefore, in the display device 600 according to another embodiment of the present specification, a part of the light emitted from one sub-pixel SP may be configured to improve the light intensity at a central viewing angle (0°), and another part may be configured to minimize the change in light intensity due to the change in viewing angle (θ). Thus, the display quality of the display device 600 may be improved by improving the light efficiency of the display device 600 and minimizing the brightness reduction and color coordinate change due to the viewing angle, and a highly efficient and low power display device 600 may be provided.

[0145] A display device according to an embodiment of the present specification can be described as follows.

[0146] A display device according to an embodiment of the present specification includes a substrate on which a plurality of sub-pixels are arranged, a plurality of transistors arranged on the substrate in each of the plurality of sub-pixels, a plurality of first electrodes connected to the plurality of transistors on the plurality of transistors, each of the first electrodes including a reflective layer and a transparent conductive layer arranged on the reflective layer, a light-emitting portion arranged on the plurality of first electrodes, and a second electrode arranged on the light-emitting portion, the transparent conductive layer including a first portion in contact with the reflective layer and a second portion spaced apart from the reflective layer, and a micro-cavity interval of light emitted from the light-emitting portion in contact with the first portion of the transparent conductive layer may be different from a micro-cavity interval of light emitted from the light-emitting portion in contact with the second portion of the transparent conductive layer.

[0147] According to another feature of the present specification, a microcavity spacing for light emitted from the light emitting portion in contact with a first portion of the transparent conductive layer may be smaller than a microcavity spacing for light emitted from the light emitting portion in contact with a second portion of the transparent conductive layer.

[0148] According to another feature of the present specification, an intensity at a central viewing angle of light emitted from a light emitting portion in contact with a first portion of the transparent conductive layer may be greater than an intensity at a central viewing angle of light emitted from a light emitting portion in contact with a second portion of the transparent conductive layer.

[0149] According to another feature of the present specification, a half-width of light emitted from a light-emitting portion in contact with a first portion of the transparent conductive layer may be smaller than a half-width of light emitted from a light-emitting portion in contact with a second portion of the transparent conductive layer.

[0150] According to still another feature of the present specification, the semiconductor device may further include an overcoating layer disposed between the plurality of transistors and the plurality of first electrodes, the overcoating layer having a first top surface and a second top surface inclined with respect to the first top surface, and the reflective layer may include a first portion in contact with the first portion of the transparent conductive layer and disposed on the first top surface, and a second portion spaced apart from the transparent conductive layer and disposed on the second top surface.

[0151] According to still another feature of the present specification, a microcavity spacing for light emitted from a light-emitting portion in contact with a first portion of a transparent conductive layer arranged in one of the subpixels may be a spacing between a first portion of a reflective layer arranged in one of the subpixels and a second electrode, and a microcavity spacing for light emitted from a light-emitting portion in contact with a second portion of a transparent conductive layer arranged in one of the subpixels may be a spacing between the second electrode arranged in one of the subpixels and a second portion of a reflective layer arranged in another subpixel adjacent to the one of the subpixels.

[0152] According to still another feature of the present specification, the pixel may further include a bank disposed between the second portion of the reflective layer and the second portion of the transparent conductive layer between the plurality of subpixels, and the second upper surface of the overcoating layer and the upper surface of the bank may include curved surfaces.

[0153] According to still another feature of the present specification, the pixel may further include a bank disposed between the second portion of the reflective layer and the second portion of the transparent conductive layer between the plurality of subpixels, wherein the second upper surface of the overcoating layer and the upper surface of the bank may comprise a plane inclined relative to the first upper surface of the overcoating layer.

[0154] According to still another feature of the present specification, a second portion of the transparent conductive layer disposed in one subpixel among the plurality of subpixels may be parallel to a second portion of the reflective layer disposed in another adjacent subpixel.

[0155] According to still another feature of the present specification, the semiconductor device may further include an overcoating layer disposed between the plurality of transistors and the plurality of first electrodes and having a flat upper surface, and the reflective layer may be disposed on the upper surface of the overcoating layer, the reflective layer including a first portion in contact with the first portion of the transparent conductive layer and a second portion spaced apart from the transparent conductive layer.

[0156] According to still another feature of the present specification, a microcavity spacing for light emitted from a light-emitting portion in contact with a first portion of a transparent conductive layer arranged in one of the plurality of subpixels may be a spacing between a first portion of a reflective layer arranged in one of the subpixels and a second electrode, and a microcavity spacing for light emitted from a light-emitting portion in contact with a second portion of a transparent conductive layer arranged in one of the subpixels may be a spacing between a second portion of a reflective layer arranged in one of the subpixels and a second electrode.

[0157] According to still another feature of the present disclosure, the pixel may further include a bank disposed between the second portion of the reflective layer and the second portion of the transparent conductive layer among the plurality of subpixels.

[0158] According to yet another feature of the present disclosure, the bank may have a refractive index of 1.8 or greater.

[0159] According to still another feature of the present specification, the pixel may further include an additional pattern disposed between the second portion of the transparent conductive layer and the second portion of the reflective layer, and a bank disposed to surround sides of the first electrode and the additional pattern.

[0160] According to yet another feature of the present disclosure, the additional pattern may be made of the same material as the transparent conductive layer.

[0161] According to still another feature of the present specification, the plurality of sub-pixels may include a first sub-pixel, a second sub-pixel, and a third sub-pixel that emit different colors, and the transparent conductive layer may have a thickness different from each other in the first sub-pixel, the second sub-pixel, and the third sub-pixel.

[0162] Although the embodiments of the present specification have been described in more detail with reference to the accompanying drawings, the present specification is not necessarily limited to such embodiments, and various modifications can be made within the scope of the technical idea of ​​the present specification. Therefore, the embodiments disclosed in the present specification are for illustration purposes, not for limiting the technical idea of ​​the present specification, and the scope of the technical idea of ​​the present specification is not limited by such embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive.

Claims

1. A substrate on which a plurality of sub-pixels are arranged; a plurality of transistors disposed on the substrate in each of the plurality of sub-pixels; a plurality of first electrodes connected to the plurality of transistors on the plurality of transistors, each of the first electrodes including a reflective layer and a transparent conductive layer disposed on the reflective layer; A light-emitting portion disposed on the plurality of first electrodes; and A second electrode is disposed on the light emitting portion, the transparent conductive layer includes a first portion in contact with the reflective layer and a second portion spaced apart from the reflective layer, A display device, wherein a micro-cavity interval for light emitted from the light-emitting portion in contact with a first portion of the transparent conductive layer is different from a micro-cavity interval for light emitted from the light-emitting portion in contact with a second portion of the transparent conductive layer.

2. 2. The display device of claim 1, wherein a microcavity spacing for light emitted from the light-emitting portion in contact with a first portion of the transparent conductive layer is smaller than a microcavity spacing for light emitted from the light-emitting portion in contact with a second portion of the transparent conductive layer.

3. 2. The display device of claim 1, wherein the intensity at a central viewing angle of light emitted from the light-emitting portion in contact with the first portion of the transparent conductive layer is greater than the intensity at a central viewing angle of light emitted from the light-emitting portion in contact with the second portion of the transparent conductive layer.

4. 2. The display device according to claim 1, wherein a half-width of light emitted from the light-emitting portion in contact with the first portion of the transparent conductive layer is smaller than a half-width of light emitted from the light-emitting portion in contact with the second portion of the transparent conductive layer.

5. an overcoating layer disposed between the plurality of transistors and the plurality of first electrodes, the overcoating layer including a first upper surface and a second upper surface inclined relative to the first upper surface; 2 . The display device of claim 1 , wherein the reflective layer includes a first portion that contacts the first portion of the transparent conductive layer and is disposed on the first upper surface, and a second portion that is spaced apart from the transparent conductive layer and is disposed on the second upper surface.

6. a microcavity interval of light emitted from the light emitting portion in contact with a first portion of the transparent conductive layer disposed in one subpixel among the plurality of subpixels is an interval between the first portion of the reflective layer disposed in the one subpixel and the second electrode, 6. The display device of claim 5, wherein a microcavity spacing for light emitted from the light-emitting portion in contact with the second portion of the transparent conductive layer arranged in the one subpixel is a spacing between the second electrode arranged in the one subpixel and the second portion of the reflective layer arranged in another subpixel adjacent to the one subpixel.

7. a bank disposed between the second portion of the reflective layer and the second portion of the transparent conductive layer between the plurality of subpixels; The display device of claim 5 , wherein the second upper surface of the overcoating layer and the upper surface of the bank include curved surfaces.

8. a bank disposed between the second portion of the reflective layer and the second portion of the transparent conductive layer between the plurality of subpixels; The display device of claim 5 , wherein the second upper surface of the overcoating layer and the upper surface of the bank include a plane inclined with respect to the first upper surface of the overcoating layer.

9. 9. The display device of claim 8, wherein the second portion of the transparent conductive layer disposed in one subpixel among the plurality of subpixels is parallel to the second portion of the reflective layer disposed in another adjacent subpixel.

10. an overcoating layer disposed between the plurality of transistors and the plurality of first electrodes, the overcoating layer having a flat upper surface; the reflective layer is disposed on top of the overcoating layer; The display device of claim 1 , wherein the reflective layer includes a first portion in contact with the first portion of the transparent conductive layer and a second portion spaced apart from the transparent conductive layer.

11. a microcavity interval of light emitted from the light emitting portion in contact with a first portion of the transparent conductive layer disposed in one subpixel among the plurality of subpixels is an interval between the first portion of the reflective layer disposed in the one subpixel and the second electrode, 11. The display device of claim 10, wherein a microcavity spacing for light emitted from the light-emitting portion in contact with the second portion of the transparent conductive layer arranged in the one subpixel is a spacing between the second portion of the reflective layer arranged in the one subpixel and the second electrode.

12. The display device of claim 10 , further comprising a bank disposed between the second portion of the reflective layer and the second portion of the transparent conductive layer between the plurality of sub-pixels.

13. The display device according to claim 12 , wherein the bank has a refractive index of 1.8 or more.

14. an additional pattern disposed between a second portion of the transparent conductive layer and a second portion of the reflective layer; and The display device of claim 10 , further comprising a bank arranged to surround a side surface of the first electrode and a side surface of the additional pattern.

15. The display device of claim 14 , wherein the additional pattern is made of the same material as the transparent conductive layer.

16. The plurality of sub-pixels include a first sub-pixel, a second sub-pixel, and a third sub-pixel that emit different colors, The display device of claim 1 , wherein the transparent conductive layer has a different thickness in each of the first sub-pixel, the second sub-pixel, and the third sub-pixel.

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