Semiconductor device, display device, photoelectric conversion device, and electronic apparatus

Abstract

To provide a semiconductor device in which leak current between light-emitting elements and leak current of an upper electrode and a lower electrode are suppressed.SOLUTION: An embodiment of the present invention relates to a semiconductor device including: a first electrode arranged onto an element substrate; an insulation layer coating an end of the first electrode; an organic layer arranged onto the first electrode and the insulation layer; and a second electrode arranged onto the organic layer. The organic layer includes: a first light emitting layer; an electric charge transportation layer arranged between the first electrode and the first light emitting layer; and an electric charge generation layer that is arranged between the first light emitting layer and the second electrode. The insulation layer includes: a sharp inclination part; and a step part which is farther from a contact part to which the first electrode and the organic layer are contacted than the sharp inclination part. In a cross section, a height of the sharp inclination part is greater than a thickness from the first electrode to the first light emitting layer in the contact part. A depth of the step part is greater than a height of the sharp inclination part, and is smaller than the thickness of the organic layer in the contact part.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to, for example, a semiconductor device, a display device, a photoelectric conversion device, and an electronic device. [Background technology]

[0002] As a device using an organic layer, a semiconductor device having a light-emitting element or a photoelectric conversion element has been proposed. An organic EL element (organic light-emitting element), which is an example of a light-emitting element, is an element having an upper electrode, a lower electrode, and an organic layer disposed between them, and emits light by exciting an organic compound contained in the organic layer. In recent years, devices equipped with organic light-emitting elements have been attracting attention.

[0003] In a semiconductor device having an organic light-emitting element, a plurality of light-emitting elements may have a common organic layer. In this configuration, current leakage through the organic layer between adjacent light-emitting elements is likely to occur. The leakage current between the light-emitting elements may cause unintended light emission of the light-emitting element. For example, when the semiconductor device is used in a display device, the unintended light emission of the light-emitting element may narrow the color gamut that represents the performance of the display device. Furthermore, even in a single light-emitting element, when it is desired to emit light from a portion of a continuous organic layer, the leakage current may cause unintended light emission.

[0004] Patent Document 1 shows a light-emitting device including a tandem element in which a plurality of light-emitting units are stacked as an organic layer. Tandem elements are advantageous in improving light-emitting efficiency, but are prone to leakage current between adjacent light-emitting elements via a highly conductive charge-generating layer. Patent Document 1 shows that in order to suppress leakage current between light-emitting elements, a recess is provided in the partition located between each lower electrode. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2014-123527 A [Patent Document 2] Patent Publication No. 2021-072282 Summary of the Invention [Problem to be solved by the invention]

[0006] In the light-emitting element disclosed in Patent Document 1, the depth of the recess is greater than the thickness between the upper electrode and the lower electrode, so the thickness between the upper electrode and the lower electrode is likely to be thin, and leakage current is likely to occur between the upper electrode and the charge generation layer or between the charge generation layer and the lower electrode. This may reduce the light-emitting efficiency and tone controllability.

[0007] An object of the present invention is to provide a technique that is advantageous for suppressing leakage current between elements and leakage current between upper and lower electrodes in a semiconductor device. [Means for solving the problem]

[0008] One embodiment of the present disclosure relates to a semiconductor device comprising: a first electrode disposed on an element substrate; an insulating layer covering an edge of the first electrode; an organic layer disposed on the first electrode and the insulating layer; and a second electrode disposed on the organic layer, the organic layer comprising a first light-emitting layer, a charge transport layer disposed between the first electrode and the first light-emitting layer, and a charge generation layer disposed between the first light-emitting layer and the second electrode, the insulating layer having a steeply sloping portion that slopes at an angle of greater than 50° with a parallel plane parallel to a lower surface of the first electrode; and a step portion that is farther from a contact portion where the first electrode and the organic layer are in contact with each other than the steeply sloping portion, Effect of the Invention

[0009] According to the present invention, it is possible to provide a semiconductor device in which leakage current between light emitting elements and leakage current between upper electrodes and lower electrodes are suppressed. [Brief description of the drawings]

[0010] [Figure 1] 1 is a schematic cross-sectional view of an example of a portion of a semiconductor device according to an embodiment; [Diagram 2] FIG. 1 is a schematic plan view of a portion of a semiconductor device according to an embodiment; [Diagram 3] FIG. 1 is a schematic plan view of a portion of a semiconductor device according to an embodiment; [Figure 4] 1 is a schematic cross-sectional view of a portion of a semiconductor device according to an embodiment; [Diagram 5] Deposition simulation diagram [Figure 6] Deposition simulation diagram [Figure 7] Schematic diagram of a cross section of an example of a step portion [Figure 8] The ratio of the distance D between the edges of the insulating layer on two adjacent bottom electrodes to the thickness C of the organic layer in contact with the bottom electrode [Figure 9] A diagram explaining the chromaticity relationship of red pixels [Figure 10] 1 is a schematic cross-sectional view of an example of a portion of a semiconductor device according to an embodiment; [Figure 11] FIG. 1 is a schematic diagram illustrating an example of a display device according to an embodiment. [Figure 12] 1A is a schematic diagram illustrating an example of an imaging device according to an embodiment; FIG. 1B is a schematic diagram illustrating an example of an electronic device according to an embodiment; [Figure 13] 1A is a schematic diagram illustrating an example of a display device according to an embodiment; FIG. 1B is a schematic diagram illustrating an example of a foldable display device according to an embodiment; [Figure 14] 1A is a schematic diagram showing an example of a lighting device according to an embodiment; FIG. 1B is a schematic diagram showing an example of a vehicle having a vehicle lamp according to an embodiment; [Figure 15] FIG. 1A is a schematic diagram showing an example of a wearable device according to an embodiment; FIG. 1B is a schematic diagram showing an example of a wearable device according to an embodiment, the example having an imaging device; [Figure 16] 1A is a schematic diagram of an image forming apparatus according to an embodiment, and FIG. 1B and FIG. 1C are schematic diagrams showing an embodiment in which a plurality of light-emitting units of an exposure light source are arranged on a long substrate. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Hereinafter, examples of specific embodiments of the conductor device, display device, photoelectric conversion device, and electronic device of the present disclosure will be described with reference to the drawings. Note that the dimensions, materials, shapes, and relative positions of the components described below are not intended to limit the scope of the present disclosure unless otherwise specified. In addition, in the following description and drawings, common symbols are used for configurations that are common across multiple drawings. Therefore, common configurations will be described with mutual reference to multiple drawings, and descriptions of configurations that are given common symbols will be omitted as appropriate.

[0012] [First embodiment] An example of the configuration of a semiconductor device will be described with reference to Fig. 1 to Fig. 9. Fig. 1 is a schematic cross-sectional view of a portion of the semiconductor device according to this embodiment. Fig. 2 is a schematic plan view of a portion of the semiconductor device according to this embodiment, and Fig. 1 is a schematic cross-sectional view of the semiconductor device taken along line AA' in Fig. 2.

[0013] In this specification, "upper" and "lower" refer to the top and bottom in Fig. 1. The main surface of substrate 1 on which lower electrode 2 and the like are arranged is referred to as the upper surface of substrate 1. The surface of lower electrode 2 facing substrate 1 is referred to as the lower surface of lower electrode 2. Therefore, for example, if a plug or the like for connecting to other wiring is connected to the lower surface of lower electrode 2, the approximately flat portion excluding that portion is referred to as the lower surface.

[0014] In addition, in this specification, the distance between member A and member B in a certain direction refers to the distance between the end of member A that is closest to member B and the end of member B that is closest to member A in that direction.

[0015] Fig. 3 is a schematic plan view of the first embodiment of the present invention, in which a display area 1000 is provided in a display device 3000 and is an area in which light-emitting pixels are arranged. Fig. 2 is an enlarged view of a portion of the display area 1000 in Fig. 3.

[0016] An example of the semiconductor device of this embodiment will be described in detail below. The semiconductor device 10 has a plurality of organic light-emitting elements 900. The organic light-emitting element 900 has, for example, a first organic light-emitting element 100, a second organic light-emitting element 200, and a third organic light-emitting element 300 shown in FIG.

[0017] The substrate 1 may have formed thereon a switching element 60 such as a transistor, wiring 21, an interlayer insulating film 22, and the like. In this specification, the components from the substrate 1 to the interlayer insulating layer 22 are referred to as an element substrate 50. That is, the element substrate 50 has, for example, the switching element 60, wiring 21, and an interlayer insulating layer 22, and the like. In Fig. 1, an example is shown in which a transistor is disposed as the switching element 60. The transistor is electrically connected to an organic light-emitting element 900 (not shown).

[0018] For example, when the semiconductor device 10 is a display device, the semiconductor device has a plurality of pixels. Each pixel may have an organic light-emitting element 900 and a transistor electrically connected to a lower electrode 2 of the organic light-emitting element 900. By controlling the driving of the organic light-emitting element 900 by the transistor, an image can be formed on the display unit of the display device.

[0019] The semiconductor device 10 of this embodiment has a lower electrode 2 (first electrode) arranged on an element substrate 50, an insulating layer 3 covering an edge of the lower electrode 2, an organic layer 40 arranged on the lower electrode 2 and the insulating layer 3, and an upper electrode 5 (second electrode) arranged on the organic layer 40. The organic layer 40 has a first light-emitting layer 45, a lower first organic layer 44 having a charge transport layer arranged between the lower electrode 2 and the first light-emitting layer 45, and a charge generation layer 42 arranged between the first light-emitting layer 45 and the upper electrode 5.

[0020] 4, the insulating layer 3 of this embodiment has a steeply inclined portion 311 and a step portion 320. The steeply inclined portion 311 has an angle of more than 50° between its surface and a plane (parallel plane) parallel to the lower surface of the lower electrode 2. The step portion 320 is farther from the contact portion 230 where the lower electrode 2 and the organic layer 40 are in contact with each other than the steeply inclined portion 311.

[0021] In a cross section passing through the element substrate 50, the lower electrode 2, and the insulating layer 3, the length of the steeply inclined portion 311 in a direction perpendicular to the parallel surface is greater than the thickness from the lower electrode to the first light-emitting layer 40 in the contact portion 230. Moreover, in the cross section, the length of the stepped portion 320 in a direction perpendicular to the parallel surface is greater than the length of the steeply inclined portion 311 in a direction perpendicular to the parallel surface, and is smaller than the thickness of the organic layer 40 in the contact portion 230.

[0022] The semiconductor device 10 of this embodiment will be described in detail below. The substrate 1 is made of a material capable of supporting the lower electrode 2, the organic layer 40, and the upper electrode 5, and is preferably made of glass, plastic, silicon, or the like.

[0023] The lower electrode 2 of the first organic light-emitting element 100 is preferably made of a material having light transparency from the viewpoint of light-emitting efficiency. Specifically, a thin film of a transparent conductive oxide such as ITO or IZO, or a metal or alloy such as Al, Ag or Pt can be used. In addition, the lower electrodes 2 of the first organic light-emitting element 100, the second organic light-emitting element 200, and the third organic light-emitting element 300 are electrically separated from each other. In order to optimize optical interference, the film thickness of the lower electrode 2 may be different between the first organic light-emitting element 100, the second organic light-emitting element 200, and the third organic light-emitting element 300.

[0024] The organic layer 40 is disposed on the lower electrode 2 of the first organic light emitting element 100. The organic layer 40 is a layer that includes at least a light emitting layer, and may be composed of a plurality of layers.

[0025] In the organic layer 40, holes injected from the anode and electrons injected from the cathode are recombined in the light-emitting layer, so that light is emitted from the light-emitting layer. The light-emitting layer may be a single layer or multiple layers. Any of the light-emitting layers may contain a red light-emitting material, a green light-emitting material, or a blue light-emitting material, and white light can be obtained by mixing the respective light-emitting colors. Any of the light-emitting layers may contain light-emitting materials of complementary colors, such as a blue light-emitting material and a yellow light-emitting material.

[0026] The organic layer 40 may include a hole transport layer, a light emitting layer, and an electron transport layer. The organic layer 40 may be made of an appropriate material selected from the viewpoints of light emitting efficiency, driving life, optical interference, and the like. The hole transport layer may function as an electron blocking layer or a hole injection layer, or may have a laminated structure of a hole injection layer, a hole transport layer, an electron blocking layer, and the like. The light emitting layer may have a laminated structure of light emitting layers that emit different colors, or may be a mixed layer in which light emitting dopants that emit different colors are mixed. In addition, the electron transport layer may function as a hole blocking layer or an electron injection layer, or may have a laminated structure of an electron injection layer, an electron transport layer, and a hole blocking layer.

[0027] In addition, the region between the upper electrode 5 and the lower electrode 2, which is the anode, and the light-emitting layer is a hole transport layer, and the region between the cathode and the light-emitting layer is an electron transport layer. The hole transport layer and the electron transport layer are collectively called the charge transport layer.

[0028] It is preferable that the hole transport layer is in contact with the lower electrode 2. When the hole transport layer has a higher mobility than the electron transport layer, leakage current between the lower electrodes 2 tends to flow more easily, and therefore the effect of this embodiment can be more effectively achieved.

[0029] The organic layer 40 may be a tandem type composed of a charge generating layer 42, a first organic layer 41 below the charge generating layer, and a second organic layer 43 above the charge generating layer 42. The first organic layer 41 and the second organic layer 43 each have a light-emitting layer. When there are multiple charge generating layers, the organic layer below the lowest charge generating layer is defined as the first organic layer. A charge transport layer such as a hole transport layer or an electron transport layer may be formed between the charge generating layer 42 and the light-emitting layer, as described later.

[0030] The charge generation layer is a layer that contains an electron donating material and an electron accepting material and generates charges. The electron donating material and the electron accepting material are materials that donate electrons and accept electrons, respectively. As a result, positive and negative charges are generated in the charge generation layer, so that positive or negative charges can be supplied to layers above and below the charge generation layer. The electron donating material may be, for example, an alkali metal such as lithium or cesium. The electron donating material may be, for example, lithium fluoride, a lithium complex, cesium carbonate, or a cesium complex. In this case, the electron donating property may be expressed by being contained together with a reducing material such as aluminum, magnesium, or calcium.

[0031] The electron donating material may be a hole transporting material. Examples of the hole transporting material include triarylamine derivatives, phenylenediamine derivatives, triazole derivatives, oxadiazole derivatives, imidazole derivatives, pyrazoline derivatives, pyrazolone derivatives, oxazole derivatives, fluorenone derivatives, hydrazone derivatives, and stilbene derivatives. Examples of the hole transporting material include phthalocyanine derivatives, porphyrin derivatives, and organic compounds such as poly(vinylcarbazole), poly(silylene), poly(thiophene), and other conductive polymers.

[0032] The electron donating material may be included in the electron transporting material. Examples of the electron transporting material include oxadiazole derivatives, thiazole derivatives, thiadiazole derivatives, and pyrazine derivatives. Examples of the electron transporting material include organic compounds such as triazole derivatives, triazine derivatives, perylene derivatives, quinoline derivatives, quinoxaline derivatives, fluorenone derivatives, anthrone derivatives, phenanthroline derivatives, and organometallic complexes.

[0033] The electron-accepting material may be, for example, an inorganic material such as a transition metal oxide, such as molybdenum oxide, or a hexaazatriphenylene derivative. The electron-accepting material may be an organic material, such as [dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile]. The charge generating layer may be a layer containing a mixture of an electron-accepting material and an electron-donating material, or a layer in which a layer containing an electron-donating material and a layer containing an electron-accepting material are laminated.

[0034] The organic layer 40 can be formed by the method described below.

[0035] The organic layers constituting the light-emitting element according to the present embodiment can be formed by dry processes such as vacuum deposition, ionization deposition, sputtering, plasma, etc. Alternatively, instead of the dry process, a wet process can be used in which a layer is formed by dissolving the organic layer in an appropriate solvent and applying a known coating method (e.g., spin coating, dipping, casting, LB method, inkjet method, etc.).

[0036] Here, when the layer is formed by a vacuum deposition method or a solution coating method, crystallization is unlikely to occur and the layer has excellent stability over time. When the layer is formed by a coating method, the layer can be formed by combining with a suitable binder resin.

[0037] Examples of the binder resin include polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, urea resin, etc. The above are examples, and the binder resin is not limited to these.

[0038] These binder resins may be used alone or in combination as homopolymers or copolymers, and may further include known additives such as plasticizers, antioxidants, and ultraviolet absorbers, if necessary.

[0039] The organic layer 40 is disposed between the lower electrode 2 and the insulating layer 3 and the upper electrode 5. It may be continuously formed on the element substrate 1 and shared by a plurality of organic light-emitting elements 900. That is, one organic layer 40 may be shared by a plurality of organic light-emitting elements. The organic layer 40 may be integrally formed over the entire surface of a display region that displays an image of the light-emitting device.

[0040] The organic layer 40 may be disposed across the lower electrode 2 of the first organic light-emitting element 100, the lower electrode 2 of the second organic light-emitting element 200, and the lower electrode 2 of the third organic light-emitting element 300. All or a part of the organic layer 40 of the first organic light-emitting element 100, the second organic light-emitting element 200, and the third organic light-emitting element 300 may be patterned for each element. The organic layer 40 may be located in a peripheral region on the periphery of the display region 1000.

[0041] The upper electrode 5 is disposed on the organic layer 40 of the first organic light-emitting element 100 and has light transmissivity. The upper electrode 5 may be a semi-transmissive material having a property of transmitting a part of the light that reaches its surface and reflecting the other part (i.e., semi-transmissive reflectivity). The material constituting the upper electrode 5 may be, for example, a transparent conductive oxide such as ITO or IZO, an elemental metal such as aluminum, silver, or gold, an alkali metal such as lithium or cesium, or an alkaline earth metal such as magnesium, calcium, or barium. The material constituting the upper electrode 5 may be, for example, a semi-transmissive material made of an alloy material containing these metal materials. The semi-transmissive material is preferably an alloy mainly composed of magnesium or silver. The upper electrode 5 may be a laminated structure of the above materials as long as it has a preferable transmittance.

[0042] Furthermore, when the semiconductor device 10 has the second organic light-emitting element 200 and the third organic light-emitting element 300, the upper electrode 5 may be disposed across the organic layer 40 of the first organic light-emitting element 100, the organic layer 40 of the second organic light-emitting element 200, and the organic layer 40 of the third organic light-emitting element 300. As with the organic layer 40, the upper electrode 5 may be integrally formed over the entire surface of the display region 1000. The upper electrode 5 may also be formed in a peripheral region on the periphery of the display region 1000.

[0043] In this embodiment, the lower electrode 2 may be an anode and the upper electrode 5 may be a cathode, or the lower electrode 2 may be a cathode and the upper electrode 5 may be an anode.

[0044] In the semiconductor device according to this embodiment, an insulating layer 3 may be provided on the outer periphery of the lower electrode 2 of the organic light emitting element 900. That is, the insulating layer 3 has an opening through which a part of the lower electrode 2 is exposed. The insulating layer 3 is formed to accurately form the light emitting region 101 (first light emitting region), 201 (second light emitting region), and 301 (third light emitting region) into the desired shape. When the insulating layer 3 is not provided, the light emitting regions 101, 201, and 301 are defined by the shape of the lower electrode 2. The insulating layer 3 is formed of an inorganic material such as silicon nitride (SiN), silicon oxynitride (SiON), or silicon oxide (SiO). It can be formed by using a known technique such as a sputtering method or a chemical vapor deposition method (CVD method). The insulating layer 3 can also be formed by using an organic material such as an acrylic resin or a polyimide resin.

[0045] The reflective portions 105 (first reflective portion), 205 (second reflective portion), and 305 (third reflective portion) have reflective layers 102 (first reflective layer), 202 (second reflective layer), and 203 (third reflective layer) and conductive layers 103 (first conductive layer), 203 (second conductive layer), and 303 (third conductive layer), respectively.

[0046] Furthermore, the conductive layers 103 (first conductive layer), 203 (second conductive layer), and 303 are disposed on the reflective layers 102, 202, and 203, respectively, and function as electrolytic corrosion suppression layers.

[0047] In a plan view, in at least a part of the region where the first light-emitting region 101 overlaps, the conductive layer 103 of the first reflecting portion 105 may have an opening so that the reflective layer 102 is exposed. When the conductive layer 103 has an opening, the light emitted by the first organic light-emitting element 100 passes through the lower electrode 2 and is reflected by the reflective layer 102, so that the light can be efficiently extracted to the light-emitting surface side. From the viewpoint of improving the light-emitting efficiency, the size of the opening of the conductive layer 103 is preferably equal to or larger than the size of the first light-emitting region 101.

[0048] Since the light reflected by the reflective layer 102 is extracted to the light emitting side from the upper electrode 5, the semiconductor device of this embodiment can obtain characteristics of high light emitting efficiency. Here, the light emitting side refers to the direction of the upper electrode 5 relative to the lower electrode 2.

[0049] The same applies to the second reflecting portion 205 and the third reflecting portion 305, so hereinafter, the first light-emitting region 101 and the first reflecting portion 105 will be described as an example.

[0050] For example, the reflective layer 102 is preferably selected from Ag or Al, which have high reflectivity, and the conductive layer 103 is preferably selected from Co, Mo, Pt, Ta, Ti, TiN, W, etc. The reflective layer 102 and the conductive layer 103 may be an alloy or a compound. A particularly suitable combination is, for example, that the reflective layer 102 is made of a material mainly composed of Al, and the conductive layer 103 is made of a material mainly composed of Ti or TiN. Furthermore, it is preferable that the reflective layer 102 is mainly composed of Al and contains Cu. It is also preferable that the conductive layer 103 is mainly composed of TiN. A barrier metal such as Ti or TiN may be provided on the substrate side of the first reflecting portion 105.

[0051] The reflective layer 102 and the conductive layer 103 can be formed by a known film formation method such as a sputtering method, a CVD method, or an ALD method. The reflective layer 102 can be formed from a material having the same main component at the same time by forming a film of a highly reflective material on a substrate and then patterning it by a known etching process. The conductive layer 103 can also be formed from a material having the same main component at the same time by forming a film of a material on a substrate and then patterning it by a known etching process.

[0052] The opening in the conductive layer 103 provided in the first reflecting portion 105 can be formed by removing the conductive layer 103 using a known etching process.

[0053] In this embodiment, an optical interference layer 30 is provided between the first reflector 105 and the lower electrode 2. By adjusting the thickness of the optical interference layer 30, it is possible to optimize the optical distance between the light-emitting layer and the reflector layer 102 of the first organic light-emitting element 100, and therefore it is possible to improve the light-emitting efficiency by utilizing optical interference. The optical interference layer may be a single layer or may have a laminated structure consisting of multiple layers.

[0054] In this embodiment, the display region 1000 may have a plurality of organic light-emitting elements 900, such as the second organic light-emitting element 200 and the third organic light-emitting element 300, in addition to the first organic light-emitting element 100. Like the first organic light-emitting element 100, the second organic light-emitting element 200 and the third organic light-emitting element 300 also have an organic layer 40 including at least a light-emitting layer between the lower electrode 2 and the upper electrode 5. Furthermore, the second organic light-emitting element 200 and the third organic light-emitting element 300 also have a second reflecting portion 205 and a third reflecting portion 305 on the substrate side of the lower electrode 2.

[0055] Similar to the first reflecting portion 105, the second reflecting portion 205 has a reflecting layer 202 in at least a part of the region where the second light-emitting portion 230 overlaps in a plan view.

[0056] Similar to the first reflecting section 105 and the second reflecting section 205, the third reflecting section 305 has a reflecting layer 302 in at least a part of the area where the third light-emitting region 301 overlaps in a plan view.

[0057] The second organic light-emitting element 200 and the third organic light-emitting element 300 may also have an optical interference layer. By making the thicknesses of the optical interference layers of the first organic light-emitting element 100, the second organic light-emitting element 200, and the third organic light-emitting element 300 different from each other, it is possible to adjust the color of the light emitted from each organic light-emitting element. The optical interference layer 30 may also have a laminated structure of multiple layers.

[0058] For example, when the optical interference layer 30 is made thinner in the order of the first organic light-emitting element 100, the second organic light-emitting element 200, and the third organic light-emitting element 300, the first optical interference layer 31, the second optical interference layer 32, and the third optical interference layer 33 can be provided on the first reflecting portion 105. The second optical interference layer 32 and the third optical interference layer 33 can be provided on the second reflecting portion 205, and the third optical interference layer 33 can be provided on the third reflecting portion 305.

[0059] The optical interference layer 30 is preferably made of a transparent material, for example, SiO, SiN, or SiON, and may be formed by known techniques such as sputtering, CVD, or ALD.

[0060] As shown in FIG. 1, it is preferable to adjust the color of light emitted from each organic light-emitting element by making the thickness of the optical interference layer of the first organic light-emitting element 100, the second organic light-emitting element 200, and the third organic light-emitting element 300 different from each other. This can increase the luminous efficiency of the organic light-emitting element of each color. In addition, in the case where the thickness of the optical interference layer of each organic light-emitting element is made different, the surface unevenness of the insulating layer 3 tends to become large, so that leakage current tends to occur between the lower electrode 2 and the charge generation layer 42 or between the charge generation layer 42 and the upper electrode 5. Therefore, it is easy to enjoy the effect of this embodiment to a great extent.

[0061] 1 shows an example in which the lower electrode 2 and the reflective layer 102 are electrically connected, but the semiconductor device is not limited to this. For example, the semiconductor device may have a pixel contact region that is insulated from the reflective portion 105 and electrically connected to the lower electrode 2. This allows the first organic light-emitting element 100 to pass a current through the pixel contact region. A wiring layer and a conductive layer 103 may be used as the pixel contact region.

[0062] 1, the first organic light emitting element 100 can pass a current through the reflective portion 105. Furthermore, the regions in which the second organic light emitting element 200 and the third organic light emitting element 300 are disposed can also have a reflective portion 205 and a reflective portion 305 having a similar configuration, respectively.

[0063] When the optical interference layer 30 is provided, the lower electrode 2 and the pixel contact region 115 can be electrically connected by providing a plug 11 in the optical interference layer 30 and disposing a conductive material in the plug. The conductive material in the plug 11 may be the same material as that of the lower electrode 2. Also, the conductive material provided in the plug 11 can be a known conductive material such as W, Ti, or TiN. Also, the lower electrode 2 and the reflective portion 105 may be in contact with each other through the plug 11. It is preferable that the portion of the reflective portion 105 that contacts the plug 11 is the conductive layer 103 from the viewpoint of suppressing electrolytic corrosion.

[0064] 2 is a plan view showing an example of a part of a semiconductor device including the reflectors 105, 205, and 305 of this embodiment. When the reflector 105 and the lower electrode 2 are in direct contact with each other, it is preferable that the conductive layer 103 and the lower electrode 2 are a combination that is unlikely to cause galvanic corrosion. For example, it is preferable that the conductive layer 103 is made of a material mainly composed of TiN, and the lower electrode 2 is made of ITO or IZO.

[0065] The insulating layer 3 has, for example, a groove as the step portion 320. The step portion 320 can be patterned, for example, by etching the insulating layer 3. The step portion 320 may be disposed so as to surround the opening 101 of the insulating layer 3.

[0066] The protective layer 6 can be made of a material that has low permeability to oxygen and moisture from the outside, such as silicon nitride, silicon oxynitride, aluminum oxide, silicon oxide, and titanium oxide. Silicon nitride and silicon oxynitride can be formed, for example, by using a CVD method. On the other hand, aluminum oxide, silicon oxide, and titanium oxide can be formed by using an atomic layer deposition method (ALD method).

[0067] The combination of the constituent materials and manufacturing method of the protective layer is not limited to the above examples, but may be manufactured in consideration of the thickness of the layer to be formed, the time required for the formation, etc. The protective layer 6 may have a single layer structure or a multilayer structure as long as it transmits light that has passed through the upper electrode 5 and has sufficient moisture blocking performance.

[0068] The color filters 121, 221, and 321 are formed on the protective layer 6. They may be in contact with each other, such as the color filters 121 and 221 or the color filters 221 and 321 shown in Fig. 1. A color filter may be arranged so as to overlap a color filter of another color. A planarization layer 7 may be arranged under the color filters, or a planarization layer 8 may be arranged over the color filters.

[0069] As shown in FIG. 1, the microlens 122, the microlens 222, and the microlens 322 may be disposed on the planarization layer 8.

[0070] (Regarding steep slopes and steps in the insulation layer) Fig. 4 is an enlarged view of a portion X of the semiconductor device surrounded by a dotted line in Fig. 1. In a cross section passing through the element substrate 1, the insulating layer 3, and the organic layer 40, the insulating layer 3 has a steeply inclined portion 311. The steeply inclined portion is a portion of the insulating layer 3 where the inclination angle θ of the surface with respect to a parallel plane parallel to the lower surface of the lower electrode 2 is greater than 50°.

[0071] Here, an example is shown in which the surface of steeply inclined portion 311 is inclined at an angle greater than 50° with respect to the parallel plane. Although Fig. 4 shows an example in which steeply inclined portion 311 and gently inclined portion 312 each have a constant inclination angle, the inclination angle may vary within each inclined portion. For example, if the inclination angle changes continuously from steeply inclined portion 311 to gently inclined portion 312, the portion with an inclination angle of 50° is the boundary between steeply inclined portion 311 and gently inclined portion 312.

[0072] FIG. 4 shows an example in which organic layer 40 has a first organic layer 41, a charge generating layer 42, and a second organic layer 43.

[0073] The first organic layer 41 is composed of a lower first organic layer 44 including a charge transport layer and an upper first organic layer 45. The upper first organic layer has a first light-emitting layer at the bottom. In other words, the boundary between the lower first organic layer and the upper first organic layer 45 is the bottom surface of the first light-emitting layer. In addition, the second organic layer 43 has a second light-emitting layer.

[0074] 4 shows an example in which only a charge transport layer is included as the lower first organic layer 44, but the lower first organic layer 44 may have one or more of a charge generation layer and a charge block layer in addition to the charge transport layer. Furthermore, each of the charge generation layer, the charge transport layer, and the charge block layer included in the lower first organic layer 44 may be a single layer or multiple layers.

[0075] The upper first organic layer 45 may also have one or more of a charge transport layer, a charge generation layer, and a charge block layer. The charge generation layer, the charge transport layer, and the charge block layer included in the upper first organic layer 45 may each be a single layer or multiple layers.

[0076] The second organic layer 43 may have one or more of a charge transport layer, a charge generation layer, and a charge block layer in addition to the light-emitting layer. The charge generation layer, the charge transport layer, and the charge block layer included in the second organic layer 43 may each be a single layer or multiple layers.

[0077] In this embodiment, the portion where the upper surface of the lower electrode 2 contacts the organic layer 40 is the contact portion 230. Fig. 4 shows an example in which the contact portion 230 is uniformly flat, but the contact portion 230 may have a non-flat portion by removing a part of the lower electrode 2 along the side surface of the insulating layer 3. The flat portion is a portion that is approximately parallel to the substrate 1 and has an inclination angle of substantially 0°.

[0078] The portion where the lower electrode 2 and the organic layer 40 contact each other is referred to as a contact portion 230. The thickness from the lower electrode to the first light-emitting layer in the contact portion 230 may be the length from the lower electrode to the first light-emitting layer on the flat portion of the upper surface of the lower electrode 2 in the contact portion 230 in a direction perpendicular to a plane parallel to the lower surface of the lower electrode. Similarly, the thickness from the lower electrode to the charge generation layer or the thickness of the organic layer in the contact portion may be the length from the lower electrode to the charge generation layer or the organic layer on the flat portion of the upper surface of the lower electrode in the contact portion in a direction perpendicular to a plane parallel to the lower surface of the lower electrode.

[0079] For example, when the organic layer 40 has a charge transport layer, the charge transport layer has high charge mobility and can efficiently transport charges from the electrode to the light-emitting layer. On the other hand, when the charge transport layer is connected between adjacent light-emitting elements 900, charges may move between the light-emitting elements, causing leakage current. The leakage current may cause unintended light emission from the light-emitting element.

[0080] Therefore, in the parts of the light-emitting element 900 that do not normally contribute to light emission (between adjacent organic light-emitting elements 900), by providing a part with a small film thickness in a layer with high charge transport properties, such as a charge transport layer, it is possible to suppress the movement of charges in that layer and thereby suppress leakage current.

[0081] Similarly, by providing a portion with a small thickness between adjacent organic light-emitting elements 900 in the charge generating layer 42, leakage current in the adjacent organic light-emitting elements 900 can be suppressed.

[0082] In the semiconductor device of the present embodiment, the length B of the steeply inclined portion 311 in the direction perpendicular to the plane parallel to the lower surface of the lower electrode 2 is greater than the distance A from the lower electrode 2 to the first light-emitting layer 45 at the contact portion 230 where the lower first organic layer 44 contacts the lower electrode 2. The distance A from the lower electrode 2 to the first light-emitting layer 45 at the contact portion 230 where the lower first organic layer 44 contacts the lower electrode 2 coincides with the thickness of the lower first organic layer 44. As a result, the lower first organic layer 44 having the charge transport layer is thinned along the steeply inclined portion 311, so that the transport of charges to the portion in the step portion 320 direction from the steeply inclined portion 311 in FIG. 4 can be suppressed. Thus, the leakage current between adjacent organic light-emitting elements 900 can be suppressed.

[0083] On the other hand, when the distance A from the lower electrode 2 to the first light-emitting layer 45 at the contact portion 230 is greater than the length B of the steeply inclined portion 311, the steeply inclined portion 311 is buried in the lower first organic layer 44, and the thickness of the lower first organic layer 44 on the steeply inclined portion 311 may not be sufficiently small. In that case, since the lower first organic layer 44 has a layer with high charge transportability such as a charge transport layer, charges are easily transported also to the portion in the direction of the step portion 320 as viewed from the steeply inclined portion 311 in FIG.

[0084] Furthermore, in this embodiment, in a direction perpendicular to a plane parallel to the lower surface of the lower electrode 2, the length B of the steeply inclined portion 311 is smaller than the distance C (the thickness of the first organic layer 41) from the lower electrode 2 to the charge generating layer 42 at the contact portion 230 where the organic layer 40 contacts the lower electrode 2. As a result, the steeply inclined portion 311 is buried in the first organic layer 41, so that the first organic layer 41 does not become too thin along the steeply inclined portion 311. Therefore, the leakage current between the lower electrode 2 and the charge generating layer 42 can be suppressed.

[0085] A decrease in light emission efficiency may occur if a leakage current flows between the lower electrode 2 and the charge generation layer 42. However, in the semiconductor device of the present embodiment, the leakage current between the lower electrode 2 and the charge generation layer 42 is reduced, and therefore the decrease in light emission efficiency of the organic light emitting element 900 can also be suppressed.

[0086] Furthermore, in this embodiment, the insulating layer 3 has a groove as a step portion 320 at a position farther from the contact portion 230 where the lower electrode 2 and the organic layer 40 are in contact with each other than the steeply inclined portion 311. Furthermore, the length D of the step portion 320 in a direction perpendicular to a plane parallel to the lower surface of the lower electrode 2 is greater than the length B of the steeply inclined portion 311 in a direction perpendicular to the parallel plane. This makes the charge generation layer 42 thinner in the step portion 320 than in the steeply inclined portion 311, so that generation and transport of charges can be suppressed in a portion in the direction of the adjacent pixel as viewed from the step portion 320.

[0087] In this case, the thickness of the first organic layer 41 is also thinned in the step portion 320, but since the charge transport layer is thinned in the steeply inclined portion 311, the amount of charge reaching the step portion 320 from the lower electrode 2 is reduced. Therefore, the leakage current between the lower electrode 2 and the charge generation layer 42 in the step portion 320 is suppressed.

[0088] Furthermore, in a direction perpendicular to a plane parallel to the lower surface of the lower electrode 2, the length D of the step portion 320 is greater than the distance C from the lower electrode 2 to the charge generation layer 42 at the contact portion 230. This makes it possible to effectively thin the charge generation layer 42 in the step portion 320, and to suppress the generation and transport of charges in the portion in the direction of the adjacent pixel as viewed from the step portion 320.

[0089] In this embodiment, the length D of the step portion 320 in a direction perpendicular to a plane parallel to the lower surface of the lower electrode 2 is smaller than the thickness E of the organic layer 40 at the contact portion 230 where the organic layer 40 contacts the lower electrode 2. As a result, the groove that is the step portion 320 is filled with the second organic layer 43, so that the second organic layer 43 does not become too thin along the step portion 320. Therefore, the leakage current between the charge generation layer 42 and the upper electrode 5 can be suppressed.

[0090] In this way, by forming the insulating layer 3 in the shape of this embodiment, it is possible to reduce the leakage current between the lower electrode 2 and the charge generation layer 42 or between the charge generation layer 42 and the upper electrode 5 while suppressing the leakage current between the organic light-emitting element 900. Therefore, it is possible to suppress a decrease in the light-emitting efficiency while suppressing the organic light-emitting element 900 from unintentionally emitting light.

[0091] Moreover, in a direction perpendicular to a plane parallel to the lower surface of the lower electrode 2, the depth D of the stepped portion 320 is preferably greater than the thickness C (the distance from the lower electrode to the charge generating layer 42) of the first organic layer 41 at the contact portion 230. This makes it easier to thin the charge generating layer 42 at the stepped portion 320, and makes it possible to effectively suppress leakage current between the organic light emitting elements 900.

[0092] In a direction perpendicular to a plane parallel to the lower surface of the lower electrode 2, the length of the steeply inclined portion 311 can also be made larger than the thickness C of the first organic layer 41 at the contact portion 230 (the distance from the lower electrode 2 to the charge generation layer 42). This allows the film thickness of not only the lower first organic layer 44 but also the charge generation layer 42 to be sufficiently small. However, in this case, the film thickness of the first organic layer 41 becomes too small, and therefore a leak current is likely to occur between the lower electrode 2 and the charge generation layer 42.

[0093] Therefore, in this embodiment, the insulating layer 3 has the steeply inclined portion 311, and further has a step portion 320 at a position farther from the contact portion 230 than the steeply inclined portion 311.

[0094] As described above, the step portion 320 has a depth D in a direction perpendicular to a plane parallel to the lower surface of the lower electrode 2 that is greater than the thickness C of the first organic layer 41 at the contact portion 230. In this case, there is a concern about leakage current between the lower electrode 2 and the charge generation layer 42. However, in this embodiment, the steeply inclined portion 311 is located closer to the contact portion 230 than the step portion 320, and the steeply inclined portion 311 reduces the charge that moves between the organic light-emitting element 900 by the lower first organic layer 44. Therefore, in the step portion 320, concerns about leakage current between the lower electrode 2 and the charge generation layer 42 are reduced.

[0095] That is, in the configuration of this embodiment, the steeply inclined portion 311 can suppress leakage current between the organic light-emitting elements caused by the charge transport layer of the lower first organic layer 44, and the stepped portion 320 can suppress leakage current between the organic light-emitting elements caused by the charge generation layer 42. Furthermore, by arranging the stepped portion 320 at a position farther from the contact portion 230 where the lower electrode 2 and the organic layer 40 are in contact than the steeply inclined portion 311, leakage current between the lower electrode 2 and the charge generation layer 42 can also be suppressed.

[0096] In order to obtain information about the preferred inclination angle of the inclined portion in this embodiment, a film formation simulation was performed using a deposition method. Figure 5 is a layout diagram of each component during the deposition simulation. The positions of the deposition source 201, the substrate 2020, and the semiconductor device 2030 disposed on the substrate were set as shown in Figure 5, with R = 200 mm, r = 95 mm, and h = 340 mm.

[0097] In the following formula (1), n, which indicates the deposition distribution, was set to 2. φ=φ 0 cos n Alpha (1)

[0098] where α is the angle, φ is the steam flow density at the angle α, and φ 0 is the vapor flow density at α = 0. In addition, it is assumed that the substrate 2020 rotates around its center.

[0099] Assuming that there is an inclined portion with an inclination angle of 0° to 90° at the position of semiconductor device 2030 on the substrate, the layer thickness of the organic layer region along the inclined portion at each inclination angle was calculated when the layer thickness of the organic layer at an inclination angle of 0° was set to 76 nm.

[0100] FIG. 6 shows the results of the film formation simulation. From this, it can be seen that when the inclination angle is greater than 50°, the layer thickness of the organic layer region along the inclined portion is likely to be thin, and when the inclination angle is 50° or less, the layer thickness of the organic layer region along the inclined portion is likely to be thick. Therefore, the inclination angle of the steeply inclined portion 311 of this embodiment is preferably greater than 50° and less than 180°. Furthermore, from FIG. 6, it can be seen that when the inclination angle is greater than 70°, the layer thickness of the organic layer region along the inclined portion can be more effectively thinned. Therefore, it is more preferable that the inclination angle of the steeply inclined portion 311 and the step portion 320 of this embodiment is greater than 70° and less than 180°. As a result, the lower first organic layer 44 including the charge transport layer and the charge generation layer 42 can be made thin, and crosstalk current between the organic light emitting elements 900 can be suppressed.

[0101] The distance between the light emitting region 101 and the light emitting region 201 of the organic light emitting element 900 is preferably within 10 μm, more preferably within 5 μm. In the case of such a high-definition pixel array, crosstalk current between the organic light emitting elements 900 tends to be large, so that the semiconductor device according to this embodiment is very effective.

[0102] An example of the shape of the step portion 320 will be described with reference to Fig. 7. The step portion 320 may be a groove as shown in Fig. 7(a) or a convex shape 321 as shown in Fig. 7(b). The step portion 320 may also be a step 322 as shown in Fig. 7(c). The length (depth D) of the step portion 320 in a direction perpendicular to a plane parallel to the lower surface of the lower electrode 2 corresponds to the depth D of the groove 321, the height D of the convex shape 322, and the height D of the step 323, respectively.

[0103] It is preferable that the groove 321, the convex shape 322, and the step 323 have a surface portion of the insulating layer 3 that is inclined at an inclination angle θ of more than 50° with respect to a parallel plane parallel to the lower surface of the lower electrode 2. This allows the charge generation layer 42 to be effectively thinned. It is also preferable that the groove 321, the convex shape 322, and the step 323 have an inclination angle θ of more than 70°, since this allows the charge generation layer 42 to be more effectively thinned. The reason why these inclination angles are preferable in terms of thinning the charge generation layer 42 is clear from the results of the film formation simulation in FIG. 6 described above. It is also preferable that the insulating layer 3 has a surface portion that is inversely tapered by 90° or more, since this makes it easier to thin the charge generation layer 42.

[0104] Step portion 320 is preferably a groove 321 or a convex shape 322. This is because these have two steps in a cross-sectional view, and therefore the charge generating layer can be easily thinned.

[0105] It is particularly preferable that the step portion is a groove, because in the groove, the material is blocked by the left and right walls of the groove during deposition of the charge generation layer 42 and does not easily penetrate into the interior of the groove, making it easier to make the charge generation layer 42 thin.

[0106] As shown in FIG. 4, the insulating layer 3 has a gently sloping portion 330 between the step portion 320 and the steeply sloping portion 311. The length F of the gently sloping portion 330 in the direction perpendicular to the parallel plane is greater than the distance C from the lower electrode 2 to the charge generating layer 42 at the contact portion 230 where the lower electrode 2 and the organic layer 40 are in contact with each other. This allows the lower first organic layer 44 and the charge generating layer 42 to be made thinner over a long distance than the area where the surface of the insulating layer 3 is flat, without making the first organic layer 41 and the second organic layer 43 too thin, so that the leakage current between adjacent lower electrodes 2 can be suppressed. Here, the gently sloping portion 330 is a surface portion of the insulating layer 3 that is inclined at an inclination angle θ ranging from 0° to 50° with respect to a parallel plane parallel to the lower surface of the lower electrode 2.

[0107] The steeply inclined portion 311 is preferably disposed at an end of the insulating layer 3. By using the end of the insulating layer 3 as the steeply inclined portion 311, space can be saved, which is advantageous for miniaturizing pixels. In addition, the closer the steeply inclined portion 311 is to the contact portion 230 where the organic layer 40 and the lower electrode 2 are in contact, the less likely it is that charges will be transported onto the insulating layer 3 via the lower first organic layer 44, which is preferable because light emission on the insulating layer 3 can be suppressed. Unlike the light-emitting region, light emission on the insulating layer 3 emits light of a wavelength different from the desired wavelength because optical interference is not properly set, which causes a decrease in color purity.

[0108] 1, in a direction parallel to the lower surface of the lower electrode 2, a distance G from the contact portion 230 where the organic layer 40 and the lower electrode 2 contact each other to the step portion 320 is smaller than a distance H from the step portion 320 to a midpoint between the adjacent light-emitting element 900. This shortens the distance from the contact portion 230 to the step portion 320, narrowing the range in which light emission can occur on the insulating layer 3, which is preferable because it is possible to suppress a decrease in color purity. Here, the midpoint between the adjacent pixels means a midpoint between the closest ends of the lower electrodes 2 of the adjacent organic light-emitting elements 900 in a direction parallel to the lower surface of the lower electrode 2.

[0109] Both the steeply inclined portion 311 and the step portion 320 preferably overlap the lower electrode 2 in a plan view. As a result, an electric field generated by the potential difference between the lower electrode 2 and the upper electrode 5 is applied to the organic layer 40 thinned by the step portion 320, promoting charge recombination and suppressing leakage current between adjacent lower electrodes 2.

[0110] 1, it is preferable that the apex of the contact portion 230 and the microlens 222 overlap in a plan view. The inclination angle of the microlens surface directly above the end of the contact portion 230 at position J with respect to a parallel plane parallel to the lower surface of the lower electrode 2 is defined as inclination angle Φj. The inclination angle of the microlens surface directly above the position of the step portion 320 closest to the contact portion 230 at position K with respect to the parallel plane is defined as inclination angle Φk. In this case, it is preferable that the inclination angle Φk is larger than the inclination angle Φj. The reason for this will be explained below.

[0111] If the horizontally guided light is scattered at the steeply inclined portion 311 or the step portion, the optical interference is not properly set, and light of a wavelength different from the desired wavelength is extracted upward, which may deteriorate the color purity. However, the inclination of the microlens surface refracts the light, making it difficult to extract it upward. In this case, the effect is greater as the inclination angle is larger. In this embodiment, the depth of the step portion is greater than the height of the steeply inclined portion 311, so the amount of scattered light at the step portion is greater. Therefore, by making the inclination angle Φk larger than the inclination angle Φj, it is possible to further suppress the scattered light from being extracted upward.

[0112] 4, it is preferable that the lower end of the groove, which is the step portion 320, is located higher than the upper end of the steeply inclined portion 311. This makes it possible to suppress color mixing and improve color purity. The reason for this will be explained below.

[0113] Light emitted from the light-emitting layer enters the insulating layer 3 through the steeply inclined portion 311, and is guided laterally through the insulating layer 3. The presence of the step portion 320 in the insulating layer 3 restricts the path of the guided light, making it difficult for the guided light to reach an adjacent light-emitting element, and reducing the amount of light extracted through the color filter of the adjacent pixel. In addition, the step portion 320 is located at the top, so that it can block upper light that is likely to contribute to color mixing, which is highly effective in suppressing color mixing.

[0114] The organic light-emitting device 10 of the first embodiment can be manufactured using the same steps as those described in Prior Art 2.

[0115] 8, the resistance per unit area of ​​organic layer 40 in a direction parallel to the lower surface of lower electrode 2 is r(D / C). If the current flowing through organic light emitting element 900R is IR and the current flowing through organic light emitting element 900G is IG, the following relationship holds: IG / IR=1 / (1+D / C) (2)

[0116] From the above formula, it can be seen that the current flowing through organic light-emitting element 900R and the current flowing through organic light-emitting element 900G have a proportional relationship with the thickness C of organic layer 40 and distance D as coefficients. In other words, even if only red organic light-emitting element 900R is made to emit light, a current also flows through green organic light-emitting element 900G, causing it to emit light, and this depends on D / C.

[0117] If the emission spectrum of only the red organic light-emitting element 900R is SR and the emission spectrum of only the green organic light-emitting element 900G is SG when emitting light with the same amount of current, the emission spectrum SR+G taking into account the leakage current between the lower electrodes 2 is expressed by the following equation (3). SR+G=SR+SG(IG / IR) (3)

[0118] FIG. 9 shows a graph in which the chromaticity coordinates of the emission spectrum SR+G in the CIExy space are calculated, with the x-value on the vertical axis and the ratio D / C on the horizontal axis. In FIG. 9, a change in the x-coordinate means that green light is also emitted, despite the intention to emit red light. That is, in FIG. 9, a low x-coordinate indicates that leakage current to the adjacent pixel is occurring. When the ratio D / C is 50 or more, the x-value hardly changes. In other words, even if there is no inclined portion of the insulating layer 3 and leakage current between the lower electrodes 2 is likely to occur, it can be seen that when the ratio D / C is 50 or more, leakage current between the lower electrodes 2 may not be an issue.

[0119] On the other hand, when the ratio D / C is less than 50, the x value is significantly reduced, and the reduction in color purity of red is significant, indicating that the leakage current between the lower electrodes 2 affects the color purity. That is, when the ratio D / C is less than 50, the organic light-emitting elements are arranged at a high density, so that the leakage current between the lower electrodes 2 has a significant effect on the semiconductor device. Therefore, when D / C is less than 50, the effect of suppressing the leakage current between the lower electrodes 2 is particularly high.

[0120] Next, a structure of the organic light-emitting element 900 considering the optical interference will be described. The optical distance between the upper electrode 5 and the lower electrode 2 of the light-emitting element 900 according to this embodiment may be a constructive interference structure. The constructive interference structure can also be called a resonant structure. In the organic light-emitting element 900, the light extracted from the semiconductor device 10 can be strengthened by optical interference by forming a plurality of layers included in the organic layer 4 so as to satisfy the constructive optical interference condition. If the optical condition is set to strengthen the light extracted in the front direction, the light is emitted in the front direction with higher efficiency. It is also known that the half-width of the emission spectrum of the light strengthened by optical interference is smaller than that of the emission spectrum before interference. That is, the color purity can be increased.

[0121] When designed for light of wavelength λ, constructive interference can be achieved by adjusting the distance d0 from the light-emitting position of the light-emitting layer to the reflective surface of the light-reflective material to d0 = iλ / 4n0 (i = 1, 3, 5, . . .).

[0122] As a result, the radiation distribution of light with wavelength λ has more components in the front direction, improving the front brightness. Note that n0 is the refractive index at wavelength λ of the layer from the light emission position to the reflective surface.

[0123] The optical distance Lr from the semiconductor device 10 to the reflecting surface of the light-reflecting electrode is expressed by the following formula (4), where φr [rad] is the sum of the phase shift amounts when light of wavelength λ is reflected by the reflecting surface. The optical distance L is the sum of the products of the refractive index nj of each layer of the organic layer and the thickness dj of each layer. In other words, L can be expressed as Σnj×dj, or also as n0×d0. φ is a negative value. Lr = (2m-(φr / π)) × (λ / 4) (4)

[0124] In the above formula (4), m is an integer equal to or greater than 0. Note that when φ=-π and m=0, L=λ / 4, and when m=1, L=3λ / 4. Hereinafter, the condition of m=0 in the above formula will be referred to as the λ / 4 interference condition, and the condition of m=1 in the above formula will be referred to as the 3λ / 4 interference condition.

[0125] The optical distance Ls from the light emission position to the reflective surface of the light extraction electrode is expressed by the following formula (5), where m' is an integer equal to or greater than 0, where the sum of the phase shifts caused by the reflection of light of wavelength λ on the reflective surface is φs [rad]. Ls=(2m'-(φs / π))×(λ / 4)=-(φs / π)×(λ / 4) (5)

[0126] Therefore, the total layer interference L is given by the following formula (6). L=(Lr+Ls)=(2m-(φ / π))×(λ / 4) (6)

[0127] Here, φ is the sum (φr+φs) of the phase shifts when light of wavelength λ is reflected by the light reflecting electrode and the light extracting electrode.

[0128] In this case, in an actual organic light-emitting device, the above formula does not have to be strictly met, taking into consideration viewing angle characteristics, which are in a trade-off relationship with the front extraction efficiency. Specifically, an error within the range of ±λ / 8 from the value where L satisfies formula (6) is acceptable. The allowable value where the value of L may deviate from the interference condition may be 50 nm or more and 75 nm or less.

[0129] Therefore, in the organic light-emitting device according to this embodiment, it is preferable that the following formula (7) is satisfied. It is even more preferable that L is within a range of ±λ / 16 from the value that satisfies the formula (6), and it is preferable that the following formula (7') is satisfied. (λ / 8)×(4m-(2φ / π)-1) <L<(λ / 8)×(4m-(2φ / π)+1) (7) (λ / 16)×(8m-(4φ / π)-1) <L<(λ / 16)×(8m-(4φ / π)+1) (7’)

[0130] In the organic light-emitting element 900, it is preferable that m=0 and m'=0 in formula (7) and formula (7'), that is, the optical interference condition is λ / 4. In this case, formula (7) and formula (7') are expressed as formula (8) and formula (8'). (λ / 8)×(-(2φ / π)-1) <L<(λ / 8)×(-(2φ / π)+1) (8) (λ / 16)×(-(4φ / π)-1) <L<(λ / 16)×(-(4φ / π)+1) (8’)

[0131] In formula (7) and formula (7'), when m=0 and m'=0, the film thickness of the organic layer 40 becomes the thinnest in the constructive interference structure. This reduces the driving voltage of the organic light-emitting element 900, and enables light emission with higher brightness within the upper limit of the power supply voltage. When the organic layer 40 becomes thin, leakage current between the upper electrode 5 and the lower electrode 2 is likely to occur. Therefore, the organic layer 4 cannot be easily thinned by utilizing the inclination of the insulating layer 3. Therefore, by satisfying the requirements described in this embodiment, it is possible to sufficiently suppress the leakage current between the upper electrode 5 and the lower electrode 2 while suppressing the leakage current between the lower electrode 2.

[0132] Here, the emission wavelength λ may be the emission wavelength of the maximum peak of the emission spectrum emitted by the light-emitting layer. In the emission of an organic compound, the maximum peak is generally the minimum peak in the emission spectrum, so the maximum peak may be the wavelength of the minimum peak.

[0133] In addition, the thickness of the organic layer 40 in the direction perpendicular to the lower surface of the lower electrode 2 at the portion in contact with the lower electrode 2 is preferably less than 200 nm. This makes it easier to lower the driving voltage of the semiconductor device. In addition, the effect of suppressing the leakage current between the lower electrodes 2 while suppressing the leakage current between the upper electrode 5 and the lower electrode 2 according to the present embodiment is enhanced.

[0134] [Second embodiment] An example of a semiconductor device 10 according to this embodiment is shown in Fig. 10. In this embodiment, the same reference numerals are used to designate the same or similar components as those in the first embodiment, and duplicated descriptions will be omitted.

[0135] 10 has a lower electrode 2 disposed in contact with an element substrate 50, and has the same configuration as the first embodiment except for the absence of an optical adjustment layer 30 and a reflective layer 105 and the accompanying changes in configuration. As a change in configuration due to the absence of the reflective layer 105, for example, it is preferable that the lower electrode 2 is light reflective. The specific configuration of the insulating layer 3 is the same as that shown in FIG.

[0136] Even with this configuration, the insulating layer 3 has the steeply inclined portion 311 and the step portion 320 described in the first embodiment, and thus the following effects can be achieved. Specifically, it is possible to simultaneously suppress the leakage current between adjacent organic light-emitting elements 900 and the leakage current between the lower electrode 2 and the charge generation layer 42 or between the charge generation layer 42 and the upper electrode 5.

[0137] 10, the length of steeply inclined portion 311 in a parallel plane parallel to the lower surface of lower electrode 2 is greater than distance A from lower electrode 2 (first electrode) to first light-emitting layer 45 in contact portion 230. This causes lower first organic layer 44 having a charge transport layer to be thinned along steeply inclined portion 311, making it possible to suppress transport of charges to a portion located in the direction of step portion 320 from steeply inclined portion 311 in FIG. 4. This makes it possible to suppress leakage current between adjacent organic light-emitting elements 900.

[0138] Furthermore, length D of step portion 320 in a direction perpendicular to a plane parallel to the lower surface of lower electrode 2 is greater than length B of steeply inclined portion 311 in a direction perpendicular to the parallel plane. This makes charge generation layer 42 thinner in step portion 320 than in steeply inclined portion 311, thereby making it possible to suppress generation and transport of charges in a portion in the direction toward the adjacent pixel as viewed from step portion 320.

[0139] In this embodiment, the length D of the step portion 320 in a direction perpendicular to a plane parallel to the lower surface of the lower electrode 2 is smaller than the thickness E of the organic layer 40 at the contact portion 230. As a result, the groove that is the step portion 320 is filled with the second organic layer 43, so that the second organic layer 43 does not become too thin along the step portion 320. Therefore, the leakage current between the charge generating layer 42 and the upper electrode 5 can be suppressed.

[0140] Furthermore, in a direction perpendicular to a plane parallel to the lower surface of the lower electrode 2, the length B of the steeply inclined portion 311 is smaller than the distance C from the lower electrode 2 to the charge generating layer 42 at the contact portion 230 where the organic layer 40 contacts the lower electrode 2. As a result, the steeply inclined portion 311 is buried in the first organic layer 41, so that the first organic layer 41 does not become too thin along the steeply inclined portion 311. Therefore, the leakage current between the lower electrode 2 and the charge generating layer 42 can be suppressed.

[0141] In a direction perpendicular to a plane parallel to the lower surface of the lower electrode 2, the length D of the step portion 320 is greater than the distance C from the lower electrode 2 to the charge generation layer 42 at the contact portion 230. This makes it possible to effectively thin the charge generation layer 42 in the step portion 320, and to suppress the generation and transport of charges in the portion in the direction of the adjacent pixel as viewed from the step portion 320.

[0142] [Third embodiment] The semiconductor device according to the present embodiment can be used as a component of a display device or a lighting device, and can also be used as an exposure light source for an electrophotographic image forming device, a backlight for a liquid crystal display device, a light emitting device having a white light source and a color filter, etc.

[0143] The display device may be an image information processing device having an image input unit that inputs image information from an area CCD, a linear CCD, a memory card, etc., an information processing unit that processes the input information, and displays the input image on a display unit.

[0144] The display unit of the imaging device or inkjet printer may have a touch panel function. The driving method of the touch panel function may be an infrared type, a capacitance type, a resistive film type, or an electromagnetic induction type, and is not particularly limited. The display device may be used in the display unit of a multifunction printer.

[0145] Next, the display device according to the present embodiment will be described with reference to the drawings.

[0146] 11 is a schematic diagram showing an example of a display device according to this embodiment. The display device 2000 may have a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. Flexible printed circuits FPC1002 and 1004 are connected to the touch panel 1003 and the display panel 1005. A transistor is printed on the circuit board 1007. The battery 1008 may not be provided if the display device is not a portable device, and may be provided in a different position even if the display device is a portable device.

[0147] The display device according to this embodiment may have color filters having red, green, and blue colors, the red, green, and blue colors being arranged in a delta arrangement.

[0148] The display device according to the present embodiment may be used as a display unit of a mobile terminal. In this case, the display device may have both a display function and an operation function. Examples of the mobile terminal include mobile phones such as smartphones, tablets, and head-mounted displays.

[0149] The display device according to the present embodiment may be used as a display unit of an imaging device having an optical unit with a plurality of lenses and an imaging element that receives light that has passed through the optical unit. The imaging device may have a display unit that displays information acquired by the imaging element. The display unit may be a display unit exposed to the outside of the imaging device, or may be a display unit disposed within a viewfinder. The imaging device may be a digital camera or a digital video camera.

[0150] 12(a) is a schematic diagram showing an example of an imaging device according to this embodiment. The imaging device 1100 may have a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The viewfinder 1101 may have a display device according to this embodiment. In this case, the display device may display not only an image to be captured, but also environmental information, imaging instructions, and the like. The environmental information may include the intensity of external light, the direction of external light, the moving speed of the subject, the possibility that the subject will be blocked by an obstruction, and the like.

[0151] Since the timing suitable for imaging is short, it is better to display information as soon as possible. Therefore, it is preferable to use a display device using the organic light-emitting element of the present invention. This is because the organic light-emitting element has a fast response speed. A display device using an organic light-emitting element can be used more preferably than a liquid crystal display device, which requires a high display speed.

[0152] The imaging device 1100 has an optical section (not shown). The optical section has a plurality of lenses, which form an image on an imaging element housed in a housing 1104. The focus of the plurality of lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically. The imaging device may be called a photoelectric conversion device. The photoelectric conversion device can include an imaging method that does not capture images sequentially, but detects the difference from the previous image, cuts out an image from an image that is always recorded, and the like.

[0153] FIG. 12(b) is a schematic diagram showing an example of an electronic device according to this embodiment. The electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 1202 may be a button or a touch panel type reaction unit. The operation unit may be a biometric recognition unit that recognizes a fingerprint and performs unlocking or the like. An electronic device having a communication unit can also be called a communication device. The electronic device may further have a camera function by including a lens and an image sensor. An image captured by the camera function is displayed on the display unit. Examples of the electronic device include a smartphone and a notebook computer.

[0154] Fig. 13 is a schematic diagram showing an example of a display device according to this embodiment. Fig. 13(a) shows a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302. The light-emitting device according to this embodiment may be used in the display unit 1302.

[0155] It has a frame 1301 and a base 1303 that supports a display unit 1302. The base 1303 is not limited to the form shown in Fig. 13(a). The lower side of the frame 1301 may also serve as the base.

[0156] The frame 1301 and the display unit 1302 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0157] FIG. 13(b) is a schematic diagram showing another example of the display device according to the present embodiment. The display device 1310 of FIG. 13(b) is configured to be bendable, and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The first display unit 1311 and the second display unit 1312 may have the light-emitting device according to the present embodiment. The first display unit 1311 and the second display unit 1312 may be one display unit without a joint. The first display unit 1311 and the second display unit 1312 can be separated at the bending point. The first display unit 1311 and the second display unit 1312 may display different images, or the first and second display units may display one image.

[0158] FIG. 14(a) is a schematic diagram showing an example of a lighting device according to the present embodiment. The lighting device 1400 may have a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion unit 1405. The light source may have an organic light-emitting element according to the present embodiment. The optical filter may be a filter that improves the color rendering of the light source. The light diffusion unit can effectively diffuse the light of the light source, such as for lighting up, and deliver the light over a wide range. The optical filter and the light diffusion unit may be provided on the light emission side of the lighting. If necessary, a cover may be provided on the outermost part.

[0159] The lighting device is, for example, a device that illuminates a room. The lighting device may emit white light, neutral white light, or any other color from blue to red. It may have a dimming circuit that adjusts the light intensity. The lighting device may have the organic light-emitting element of the present invention and a power supply circuit connected thereto. The power supply circuit is a circuit that converts AC voltage into DC voltage. Moreover, white has a color temperature of 4200K, and neutral white has a color temperature of 5000K. The lighting device may have a color filter.

[0160] The lighting device according to the present embodiment may also include a heat dissipation section that dissipates heat from within the device to the outside, and examples of the heat dissipation section include metals with high specific heat, liquid silicon, and the like.

[0161] Fig. 14(b) is a schematic diagram of an automobile, which is an example of a moving body according to this embodiment. The automobile has tail lamps, which are an example of a lamp. The automobile 1500 has tail lamps 1501, and may be configured to turn on the tail lamps when braking or the like is performed.

[0162] A tail lamp 1501 may have an organic light-emitting element according to this embodiment. The tail lamp may have a protective member for protecting the organic EL element. The protective member may be made of any material as long as it has a certain degree of strength and is transparent, but is preferably made of polycarbonate or the like. Polycarbonate may be mixed with a furandicarboxylic acid derivative, an acrylonitrile derivative, or the like.

[0163] The automobile 1500 may have a body 1503 and a window 1502 attached thereto. The window may be a transparent display as long as it is not a window for checking the front and rear of the automobile. The transparent display may have an organic light-emitting element according to this embodiment. In this case, the constituent materials of the electrodes and the like of the organic light-emitting element are made of transparent members.

[0164] The moving body according to the present embodiment may be a ship, an aircraft, a drone, or the like. The moving body may have a body and a lamp provided on the body. The lamp may emit light to indicate the position of the body. The lamp has the organic light-emitting element according to the present embodiment.

[0165] An application example of the display device of each of the above-mentioned embodiments will be described with reference to Fig. 15. The display device can be applied to a system that can be worn as a wearable device such as smart glasses, HMD, and smart contacts. An image capturing and display device used in such an application example has an image capturing device capable of photoelectrically converting visible light, and a display device capable of emitting visible light.

[0166] 15(a) illustrates glasses 1600 (smart glasses) according to one application example. An imaging device 1602 such as a CMOS sensor or a SPAD is provided on the front side of a lens 1601 of the glasses 1600. In addition, a display device according to each of the above-mentioned embodiments is provided on the back side of the lens 1601.

[0167] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the image capture device 1602 and the display device according to each embodiment. The control device 1603 also controls the operations of the image capture device 1602 and the display device. The lens 1601 is formed with an optical system for focusing light on the image capture device 1602.

[0168] FIG. 15(b) illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 have a control device 1612. The control device 1612 is equipped with an imaging device corresponding to the imaging device 1602 and a display device. An optical system for projecting light emitted by the display device in the control device 1612 is formed in the lens 1611, and an image is projected onto the lens 1611. The control device 1612 functions as a power source that supplies power to the imaging device and the display device, and controls the operation of the imaging device and the display device. The control device may have a line-of-sight detection unit that detects the line of sight of the wearer. Infrared light may be used for detecting the line of sight. The infrared light emission unit emits infrared light toward the eyeball of a user gazing at a display image. An imaging unit having a light receiving element detects the reflected light of the emitted infrared light from the eyeball, thereby obtaining an image of the eyeball. By having a reduction means for reducing light from the infrared light emission unit to the display unit in a planar view, deterioration of image quality is reduced.

[0169] The gaze of the user with respect to the displayed image is detected from an image of the eyeball obtained by capturing infrared light. Any known method can be applied to gaze detection using the image of the eyeball. As an example, a gaze detection method based on a Purkinje image formed by reflection of irradiated light on the cornea can be used.

[0170] More specifically, the gaze detection process is performed based on the pupil-corneal reflex method. Using the pupil-corneal reflex method, a gaze vector that indicates the direction (rotation angle) of the eyeball is calculated based on the pupil image and the Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0171] A display device according to an embodiment of the present invention may have an imaging device having a light receiving element, and may control a display image on the display device based on information about a user's line of sight from the imaging device.

[0172] Specifically, the display device determines a first display area on which the user gazes and a second display area other than the first display area based on the line-of-sight information. The first display area and the second display area may be determined by a control device of the display device, or may be received from an external control device. In the display area of ​​the display device, the display resolution of the first display area may be controlled to be higher than the display resolution of the second display area. In other words, the resolution of the second display area may be lower than the first field of view area.

[0173] The display area includes a first display area and a second display area different from the first display area, and an area having a high priority is determined from the first display area and the second display area based on line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the display device, or may be determined by an external control device and received. The resolution of the area having a high priority may be controlled to be higher than the resolution of areas other than the area having a high priority. In other words, the resolution of an area having a relatively low priority may be lowered.

[0174] AI may be used to determine the first display area or the area with high priority. The AI ​​may be a model configured to estimate the angle of the line of sight and the distance to an object at the end of the line of sight from the image of the eyeball, using the image of the eyeball and the direction in which the eyeball in the image was actually looking as teacher data. The AI ​​program may be included in the display device, the imaging device, or an external device. If included in the external device, it is transmitted to the display device via communication.

[0175] When display control is performed based on visual recognition detection, the present invention is preferably applicable to smart glasses that further include an imaging device for capturing images of the outside world. The smart glasses can display captured outside information in real time.

[0176] Fig. 16 shows an image forming apparatus according to one embodiment of the present invention. Fig. 16(a) is a schematic diagram of an image forming apparatus 36 according to one embodiment of the present invention. The image forming apparatus has a photoconductor, an exposure light source, a developing unit, a charging unit, a transfer unit, a transport roller, and a fixing unit.

[0177] Light 29 is irradiated from an exposure light source 28, and an electrostatic latent image is formed on the surface of the photoconductor 27. This exposure light source has an organic light-emitting element according to the present invention. The developing unit 31 has toner and the like. The charging unit 30 charges the photoconductor. The transfer device 32 transfers the developed image to a recording medium 34. The transport unit 33 transports the recording medium 34. The recording medium 34 is, for example, paper. The fixing unit 35 fixes the image formed on the recording medium.

[0178] 16(b) and 16(c) are schematic diagrams showing a state in which a plurality of light-emitting sections 38 are arranged on a long substrate of an exposure light source 28. Reference numeral 37 denotes a direction parallel to the axis of the photoconductor, and indicates the row direction in which the organic light-emitting elements are arranged. This row direction is the same as the direction of the axis about which the photoconductor 27 rotates. This direction can also be called the long axis direction of the photoconductor.

[0179] Fig. 16(b) shows a configuration in which the light-emitting units are arranged along the long axis direction of the photoconductor. Fig. 16(c) shows a different configuration from (b), in which the light-emitting units are arranged alternately in the column direction in the first column and the second column. The first column and the second column are arranged at different positions in the row direction.

[0180] In the first column, a plurality of light-emitting units are arranged at intervals. In the second column, light-emitting units are arranged at positions corresponding to the intervals between the light-emitting units in the first column. In other words, a plurality of light-emitting units are also arranged at intervals in the row direction.

[0181] The arrangement in FIG. 16(c) can also be described as a grid-like arrangement, a houndstooth arrangement, or a checkerboard pattern.

[0182] As described above, by using a device using the organic light-emitting element according to this embodiment, it is possible to achieve a display with good image quality and stability even over a long period of time.

[0183] The present disclosure includes, for example, the following configurations.

[0184] (Configuration 1) a first electrode disposed on an element substrate, an insulating layer covering an edge of the first electrode, an organic layer disposed on the first electrode and the insulating layer, and a second electrode disposed on the organic layer, the organic layer having a first light-emitting layer, a charge transport layer disposed between the first electrode and the first light-emitting layer, and a charge generation layer disposed between the first light-emitting layer and the second electrode, the insulating layer having a steeply sloping portion that slopes at an angle of greater than 50° with a parallel plane that is parallel to a lower surface of the first electrode, and a step portion that is farther from a contact portion where the first electrode and the organic layer are in contact with each other than the steeply sloping portion,

[0185] (Configuration 2) 2. The semiconductor device of claim 1, wherein the length of the steeply inclined portion in a cross-sectional direction perpendicular to the parallel plane is shorter than the distance from the first electrode to the charge generating layer at the contact portion.

[0186] (Configuration 3) 3. The semiconductor device according to claim 1, wherein the length of the step portion in the cross section in a direction perpendicular to the parallel plane is greater than the distance from the first electrode to the charge generating layer at the contact portion.

[0187] (Configuration 4) 4. The semiconductor device according to any one of configurations 1 to 3, wherein the step portion is a groove.

[0188] (Configuration 5) the insulating layer has a gentle slope portion between the step portion and the steep slope portion, A semiconductor device according to any one of structures 1 to 4, characterized in that in a direction perpendicular to the parallel plane of the cross section, the length of the gently sloping portion is greater than the distance from the first electrode to the charge generating layer at the contact portion.

[0189] (Configuration 6) 6. The semiconductor device according to any one of configurations 1 to 5, wherein the steeply inclined portion is on the first electrode and at an end of the insulating layer.

[0190] (Configuration 7) The semiconductor device according to any one of configurations 1 to 6, wherein the step portion overlaps the first electrode in a plan view relative to the parallel surface.

[0191] (Configuration 8) 8. The semiconductor device according to any one of configurations 1 to 7, wherein in the cross section, a lower end of the step portion is located at a greater distance from the lower surface of the first electrode than an upper end of the steeply inclined portion.

[0192] (Configuration 9) The semiconductor device according to any one of configurations 1 to 8, further comprising a reflective layer between the element substrate and the first electrode.

[0193] (Configuration 10) a reflective layer between the element substrate and the first electrode, and a conductive layer disposed on the reflective layer; the conductive layer has an opening; 10. The semiconductor device according to any one of configurations 1 to 9, wherein the contact portion is contained within the opening in a plan view with respect to the lower surface of the first electrode.

[0194] (Configuration 11) In the cross section, the steep slope portion is disposed on the reflective layer within the opening of the conductive layer; 11. The semiconductor device according to configuration 10, wherein the step portion is disposed on the conductive layer.

[0195] (Configuration 12) a third electrode disposed on the element substrate and adjacent to the first electrode with the insulating layer interposed therebetween; the insulating layer covers an edge of the third electrode; the second electrode is disposed on the third electrode with the organic layer therebetween; In the cross section, A semiconductor device described in any one of configurations 1 to 11, wherein in a direction parallel to the underside of the first electrode, the distance from the contact portion to the step portion is shorter than the distance from the step portion to an intermediate position between the first electrode and the third electrode.

[0196] (Configuration 13) a third electrode disposed on the element substrate and adjacent to the first electrode with the insulating layer interposed therebetween; the insulating layer covers an edge of the third electrode; the second electrode is disposed on the third electrode with the organic layer therebetween; In the cross section, a reflective layer between the element substrate and the first electrode and the third electrode; 12. The semiconductor device according to any one of configurations 1 to 11, wherein a thickness of an insulating layer disposed between the reflective layer and the first electrode is different from a thickness of an insulating layer disposed between the reflective layer and the third electrode.

[0197] (Configuration 14) A microlens is disposed above the second electrode, In a plan view of the lower surface of the first electrode, The apex of the microlens is included in the contact portion, A semiconductor device according to any one of configurations 1 to 13, wherein the inclination angle of the surface of the microlens at a position where the end of the step portion on the contact portion side overlaps with the surface of the microlens at a position where the end of the contact portion overlaps with the surface of the microlens in the planar view is larger than the inclination angle of the surface of the microlens at a position where the end of the contact portion overlaps with the surface of the microlens in the planar view.

[0198] (Configuration 15) A liquid crystal display device comprising: a plurality of pixels, at least one of the plurality of pixels having the semiconductor device according to any one of structures 1 to 14; The display device further comprises a transistor electrically connected to the first electrode of the body device.

[0199] (Configuration 16) an optical unit having a plurality of lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image captured by the image sensor; 15. A photoelectric conversion device, wherein the display portion comprises the semiconductor device according to any one of the first to fourteenth aspects.

[0200] (Configuration 17) 15. An electronic device comprising: a display unit having the semiconductor device according to any one of structures 1 to 14; a housing in which the display unit is provided; and a communication unit provided in the housing and configured to communicate with an outside device.

[0201] (Configuration 18) 15. An illumination device comprising: a light source having the semiconductor device according to any one of structures 1 to 14; and a light diffusion section or an optical film that transmits light emitted by the light source.

[0202] (Configuration 19) A moving body comprising: a lighting device having the semiconductor device according to any one of configurations 1 to 14; and a body on which the lighting device is provided. [Explanation of symbols]

[0203] 50 Element substrate 2 1st electrode 3 First insulating layer 40 Organic layer 5 Second electrode 320 Step 311 Steep Slope

Claims

1. A first electrode disposed on an element substrate; an insulating layer covering an edge of the first electrode; an organic layer disposed on the first electrode and the insulating layer; a second electrode disposed on the organic layer; the organic layer includes a first light-emitting layer, a charge transport layer disposed between the first electrode and the first light-emitting layer, and a charge generation layer disposed between the first light-emitting layer and the second electrode; the insulating layer has a steeply inclined portion that is inclined at an angle of greater than 50° with respect to a parallel plane parallel to a lower surface of the first electrode, and a step portion that is farther away from a contact portion where the first electrode and the organic layer are in contact with each other than the steeply inclined portion; In a cross section passing through the element substrate, the first electrode, and the insulating layer, a length of the steeply inclined portion in a direction perpendicular to the parallel plane is greater than a distance from the first electrode to the first light-emitting layer at the contact portion; The semiconductor device according to claim 1, wherein the length of the step portion in a direction perpendicular to the parallel surface is greater than the length of the steeply inclined portion and is smaller than the thickness of the organic layer at the contact portion.

2. 2 . The semiconductor device according to claim 1 , wherein the length of the steeply inclined portion in the cross section in a direction perpendicular to the parallel surface is smaller than a distance from the first electrode to the charge generating layer at the contact portion.

3. 2 . The semiconductor device according to claim 1 , wherein the length of the step portion in the cross section in a direction perpendicular to the parallel surface is greater than a distance from the first electrode to the charge generating layer at the contact portion.

4. 2. The semiconductor device according to claim 1, wherein the step portion is a groove.

5. the insulating layer has a gentle slope portion between the step portion and the steep slope portion, 2 . The semiconductor device according to claim 1 , wherein the length of the gently sloping portion in the cross section in a direction perpendicular to the parallel surface is greater than the distance from the first electrode to the charge generating layer at the contact portion.

6. The semiconductor device according to claim 1 , wherein the steeply inclined portion is on the first electrode and at an end of the insulating layer.

7. The semiconductor device according to claim 1 , wherein the step portion overlaps the first electrode in a plan view with respect to the parallel surface.

8. 2 . The semiconductor device according to claim 1 , wherein, in the cross section, a lower end of the step portion is located at a greater distance from the lower surface of the first electrode than an upper end of the steeply inclined portion.

9. The semiconductor device according to claim 1 , further comprising a reflective layer between the element substrate and the first electrode.

10. a reflective layer between the element substrate and the first electrode, and a conductive layer disposed on the reflective layer; the conductive layer has an opening; The semiconductor device according to claim 1 , wherein the contact portion is included in the opening in a plan view with respect to the lower surface of the first electrode.

11. In the cross section, the steep slope portion is disposed on the reflective layer within the opening of the conductive layer; The semiconductor device according to claim 10 , wherein the step portion is disposed on the conductive layer.

12. a third electrode disposed on the element substrate and adjacent to the first electrode with the insulating layer interposed therebetween; the insulating layer covers an edge of the third electrode; the second electrode is disposed on the third electrode with the organic layer therebetween; In the cross section, 2 . The semiconductor device according to claim 1 , wherein in a direction parallel to the bottom surface of the first electrode, the distance from the contact portion to the step portion is smaller than the distance from the step portion to a midpoint between the first electrode and the third electrode.

13. a third electrode disposed on the element substrate and adjacent to the first electrode with the insulating layer interposed therebetween; the insulating layer covers an edge of the third electrode; the second electrode is disposed on the third electrode with the organic layer therebetween; In the cross section, a reflective layer between the element substrate and the first electrode and the third electrode; 2 . The semiconductor device according to claim 1 , wherein a thickness of an insulating layer disposed between the reflective layer and the first electrode is different from a thickness of an insulating layer disposed between the reflective layer and the third electrode.

14. A microlens is disposed above the second electrode, In a plan view of the lower surface of the first electrode, The apex of the microlens is included in the contact portion, 2. The semiconductor device according to claim 1, wherein the inclination angle of the surface of the microlens at a position where the end of the step portion on the contact portion side overlaps with the surface of the microlens at a position where the end of the contact portion overlaps with the surface of the microlens in the planar view is larger than the inclination angle of the surface of the microlens at a position where the end of the contact portion overlaps with the surface of the microlens in the planar view.

15. A liquid crystal display device comprising: a plurality of pixels, at least one of the plurality of pixels having the semiconductor device according to claim 1; The display device further comprises a transistor electrically connected to the first electrode of the body device.

16. an optical unit having a plurality of lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image captured by the image sensor; A photoelectric conversion device, comprising: a display portion comprising the semiconductor device according to claim 1 .

17. 15. An electronic device comprising: a display unit having the semiconductor device according to claim 1; a housing in which the display unit is provided; and a communication unit provided in the housing for communicating with an outside.

18. 15. An illumination device comprising: a light source having the semiconductor device according to claim 1; and a light diffusion portion or an optical film that transmits light emitted by the light source.

19. A moving object comprising: a lamp having the semiconductor device according to claim 1; and a body on which the lamp is provided.

Images