Semiconductor relay module and semiconductor chip including the same

Abstract

To provide a semiconductor relay module capable of achieving a changeover contact relay with a simple configuration.SOLUTION: A semiconductor relay module 100 includes first and second input terminals IN1, IN2, a control terminal IN3, first to fourth terminals T1-T4, first and second semiconductor relays 10, 20, and a first MOSFET 2. The first MOSFET 2 switches on and off in accordance with an input signal to the control terminal IN3. When the first MOSFET 2 is on, the first and second input terminals IN1, IN2 are electrically connected to each other, and the first semiconductor relay 10 electrically connects the first and second terminals T1, T2 to each other. When the first MOSFET 2 is off, the first input terminal IN1 and the control terminal IN3 are electrically connected to each other, and the second semiconductor relay 20 electrically connects the third and fourth terminals T3, T4 to each other.SELECTED DRAWING: Figure 1A

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor relay module and a semiconductor chip including the same. [Background technology]

[0002] Conventionally, semiconductor relays have been known as a means for transmitting signals. A semiconductor relay uses a MOS field effect transistor (hereinafter referred to as MOSFET) as an output element, and is also called a photorelay when an optical element is used on the input side. A semiconductor relay can be made smaller and consume less power than a mechanical relay. Also, unlike a mechanical relay, a semiconductor relay does not have a mechanical contact opening and closing operation, so it can operate at high speed and has a long life. Also, a semiconductor relay module that combines multiple semiconductor relays into one component is widely known (for example, see Patent Document 1).

[0003] Incidentally, there are three known types of relay switches, including semiconductor relays. The first type is one in which the relay switch is normally in the open state, and when the relay switch is activated to close, a signal transmission path is established. This type is called an A-contact relay. The second type is one in which the relay switch is normally in the closed state, and when the relay switch is activated to open, the signal transmission path is interrupted. This type is called a B-contact relay. A-contact relays and B-contact relays are a type of single-throw relay.

[0004] Finally, when two loads are connected to a relay switch and the relay switch is open, a signal transmission path to one load is established but the signal transmission path to the other load is cut off. When the relay switch is open, a signal transmission path to the other load is established but the signal transmission path to one load is cut off. A C-contact relay is a type of double-throw relay.

[0005] Of these, mechanical relays are currently the mainstream type of c-contact relay, but there is a demand to replace them with semiconductor relays.

[0006] Conventionally, there is known a configuration in which an operation similar to that of a contact relay is attempted by combining an a-contact relay and a b-contact relay (see, for example, Patent Documents 2 to 5). [Prior art documents] [Patent documents]

[0007] [Patent Document 1] JP 2002-185033 A [Patent Document 2] Patent No. 3470488 [Patent Document 3] Japanese Patent Application Publication No. 08-065126 [Patent Document 4] Japanese Patent Application Publication No. 04-020010 [Patent Document 5] JP 2016-063298 A Summary of the Invention [Problem to be solved by the invention]

[0008] However, the conventional configurations disclosed in Patent Documents 2 to 5 have complicated circuit configurations, and require detailed adjustment of the characteristics of each element in order to reliably perform an operation similar to that of a c-contact relay.

[0009] The present disclosure has been made in view of the above points, and has an object to provide a semiconductor relay module capable of realizing a c-contact relay with a simple configuration, and a semiconductor chip including the same. [Means for solving the problem]

[0010] In order to achieve the above object, a semiconductor relay module according to the present disclosure includes a first input terminal to which a first voltage is applied, a second input terminal to which a second voltage lower than the first voltage is applied, a control terminal to which a control signal is input, a first terminal, a second terminal, a third terminal, and a fourth terminal, a first semiconductor relay connected to the first terminal and the second terminal, a second semiconductor relay connected to the third terminal and the fourth terminal, and a control circuit connected to the first input terminal, the second input terminal, the control terminal, the first semiconductor relay, and the second semiconductor relay and having a first MOSFET, wherein the first MOSFET is switched on and off in response to the control signal, and when the first MOSFET is on, the first input terminal and the second input terminal are electrically connected to each other and the first semiconductor relay connects the first terminal and the second terminal to each other, and when the first MOSFET is off, the first input terminal and the control terminal are electrically connected to each other and the second semiconductor relay connects the third terminal and the fourth terminal to each other.

[0011] The semiconductor chip according to the present disclosure comprises the semiconductor relay module and a housing covering the semiconductor relay module, wherein the housing has: a first translucent resin provided between the first light-emitting element and the first light-receiving element and covering a light-emitting surface of the first light-emitting element and a light-receiving surface of the first light-receiving element; a second translucent resin provided between the second light-emitting element and the second light-receiving element and covering a light-emitting surface of the second light-emitting element and a light-receiving surface of the second light-receiving element; and a light-shielding resin provided between the first translucent resin and the second translucent resin and separating the first translucent resin from the second translucent resin. Effect of the Invention

[0012] According to the present disclosure, a c-contact relay can be realized with a simple configuration. [Brief description of the drawings]

[0013] [Figure 1A] 1 is a diagram showing an outline of a semiconductor relay module according to a first embodiment. [Figure 1B]FIG. 2 is a circuit diagram of a semiconductor relay module. [Diagram 2] This is a circuit diagram of a c-contact relay. [Diagram 3] FIG. 4 is a diagram showing state transitions of a semiconductor relay module. [Figure 4A] 1 is a diagram showing a signal transmission path within a semiconductor relay module when a high-voltage signal is input to a control terminal. FIG. [Figure 4B] 11 is a diagram showing a signal transmission path within a semiconductor relay module when a low-voltage signal is input to a control terminal. FIG. [Diagram 5] 5A and 5B are diagrams illustrating changes in potential over time at various parts of the semiconductor relay module. [Figure 6] FIG. 11 is a circuit diagram of a semiconductor relay module according to a first modified example. [Figure 7] FIG. 11 is a circuit diagram of a first semiconductor relay module according to a second embodiment. [Figure 8] 6 is a diagram showing the relationship between the drive current of the first light-emitting element and the operation time of the second MOSFET. FIG. [Figure 9A] FIG. 11 is a circuit diagram of a second semiconductor relay module according to the second embodiment. [Figure 9B] FIG. 11 is another circuit diagram of the second semiconductor relay module according to the second embodiment. [Figure 9C] FIG. 11 is a circuit diagram of a third semiconductor relay module according to the second embodiment. [Figure 9D] FIG. 11 is a circuit diagram of a third semiconductor relay module according to the second embodiment. [Figure 9E] FIG. 11 is a circuit diagram of a fourth semiconductor relay module according to the second embodiment. [Figure 10A] FIG. 11 is a circuit diagram of a fifth semiconductor relay module according to the second embodiment. [Figure 10B] FIG. 11 is a circuit diagram of a sixth semiconductor relay module according to the second embodiment. [Figure 10C] FIG. 13 is a circuit diagram of a seventh semiconductor relay module according to the second embodiment. [Figure 11] FIG. 11 is a diagram showing an outline of a semiconductor relay module according to a third embodiment. [Figure 12] FIG. 11 is a diagram showing state transitions of the semiconductor relay module according to the third embodiment. [Figure 13A] 1 is a diagram showing a signal transmission path within a semiconductor relay module when a high-voltage signal is input to a control terminal. FIG. [Figure 13B] 11 is a diagram showing a signal transmission path within a semiconductor relay module when a low-voltage signal is input to a control terminal. FIG. [Figure 14] FIG. 11 is a circuit diagram of a semiconductor relay module according to a third embodiment. [Figure 15] FIG. 11 is another circuit diagram of the semiconductor relay module according to the third embodiment. [Figure 16] FIG. 11 is yet another circuit diagram of the semiconductor relay module according to the third embodiment. [Figure 17] FIG. 11 is a circuit diagram of a semiconductor relay module according to a second modified example. [Figure 18] 13 is another circuit diagram of the semiconductor relay module according to the second modification. FIG. [Figure 19] 10 is a schematic diagram showing the structure of a semiconductor chip according to a fourth embodiment. FIG. [Figure 20] FIG. 4 is a bottom view of the input side lead frame. [Figure 21] FIG. 4 is a top view of the output side lead frame. [Figure 22] 4 is a schematic diagram showing the positional relationship between a first LED, a second LED, a first light receiving IC, a second light receiving IC, and a first MOSFET. FIG. [Diagram 23] 4 is a schematic cross-sectional view showing a structure between a first LED and a second LED and a first light receiving IC and a second light receiving IC. FIG. [Figure 24] 10A and 10B are schematic diagrams showing another structure of a semiconductor chip. [Diagram 25] 13 is a schematic diagram showing the positional relationship between first to fourth LEDs, first to fourth light receiving ICs, and a first MOSFET according to Modification 3. FIG. [Figure 26A] 13 is a schematic diagram of a first input lead according to Modification 4, viewed from the Z direction. FIG. [Figure 26B] 26B is a cross-sectional view taken along line XXIVB-XXVIB in FIG. 26A. [Figure 27] 13 is a schematic diagram of another first input lead according to Modification 4, viewed from the Z direction. FIG. [Figure 28] 13 is a schematic diagram of a further first input lead according to Modification 4, viewed from the Z direction. FIG. [Figure 29] FIG. 11 is a cross-sectional view of a first input lead according to another embodiment. [Diagram 30] FIG. 11 is a diagram showing state transitions of a semiconductor relay module according to another embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. Note that the following description of the preferred embodiments is merely illustrative in nature and is not intended to limit the present disclosure, its application, or its uses.

[0015] (Embodiment 1) [Semiconductor relay module configuration] Fig. 1A is a schematic diagram of a semiconductor relay module according to embodiment 1. Fig. 1B is a circuit diagram of the semiconductor relay module.

[0016] 1A and 1B, the semiconductor relay module 100 has a control circuit 1, a first semiconductor relay 10, and a second semiconductor relay 20. The semiconductor relay module 100 also has, as input side terminals, a first input terminal IN1, a second input terminal IN2, and a control terminal IN3.

[0017] The control circuit 1 has a first MOSFET 2 as a change-over switch. The first MOSFET 2 switches the conduction state between the first input terminal IN1 and the second input terminal IN2 and between the first input terminal IN1 and the control terminal IN3 in response to a control signal input to a control terminal IN3. This will be described later.

[0018] 1B, the first semiconductor relay 10 has a first terminal T1 and a second terminal T2 as output terminals, and also has a first LED (first light-emitting element) 11, a first photodiode array (first light-receiving element) 12, a first charge / discharge circuit 13, a second MOSFET 14, and a third MOSFET 15. Both ends of the first photodiode array 12 are connected to the first charge / discharge circuit 13.

[0019] The second MOSFET 14 has a drain (D) connected to the first terminal T1 and a source (S) connected to the source (S) of the third MOSFET 15. The second MOSFET 14 has a gate (G) connected to the first charge / discharge circuit 13. The third MOSFET 15 has a drain (D) connected to the second terminal T2 and a gate (G) connected to the first charge / discharge circuit 13.

[0020] 1B, the second semiconductor relay 20 has a second LED (second light-emitting element) 21, a second photodiode array (second light-receiving element) 22, a second charge / discharge circuit 23, a fourth MOSFET 24, and a fifth MOSFET 25. Both ends of the second photodiode array 22 are connected to the second charge / discharge circuit 23.

[0021] The drain (D) of the fourth MOSFET 24 is connected to the third terminal T3, and the source (S) is connected to the source (S) of the fifth MOSFET 25. The gate (G) of the fourth MOSFET 24 is connected to the second charge / discharge circuit 23. The drain (D) of the fifth MOSFET 25 is connected to the fourth terminal T4, and the gate (G) is connected to the second charge / discharge circuit 23.

[0022] In the first semiconductor relay 10, when a current equal to or greater than a threshold flows through the first LED 11, light (hereinafter referred to as first output light) is emitted from the first LED 11 and enters the first photodiode array 12. A current corresponding to the amount of the received first output light is generated in the first photodiode array 12, and this current charges the first charging / discharging circuit 13. The first charging / discharging circuit 13 applies a voltage corresponding to the amount of charge to each of the gates (G) of the second MOSFET 14 and the third MOSFET 15. When the voltage applied from the first charging / discharging circuit 13 exceeds the respective threshold voltages of the second MOSFET 14 and the third MOSFET 15, the second MOSFET 14 and the third MOSFET 15 are each turned on, and a conductive state is established between the first terminal T1 and the second terminal T2.

[0023] On the other hand, when the current stops flowing to the first LED 11, the first LED 11 stops emitting the first output light, and no current is generated in the first photodiode array 12. Therefore, charging to the first charge / discharge circuit 13 also stops. In this case, the stored charge is discharged, and the voltage applied from the first charge / discharge circuit 13 to the gates (G) of the second MOSFET 14 and the third MOSFET 15 decreases. When the voltage applied from the first charge / discharge circuit 13 falls below the threshold voltages of the second MOSFET 14 and the third MOSFET 15, the second MOSFET 14 and the third MOSFET 15 are each turned off, and a non-conductive state is established between the first terminal T1 and the second terminal T2.

[0024] In the second semiconductor relay 20, similarly to the operation of the first semiconductor relay 10, when light (hereinafter referred to as second output light) is emitted from the second LED 21, a conductive state is established between the third terminal T3 and the fourth terminal T4. On the other hand, when the emission of the second output light is stopped, a non-conductive state is established between the third terminal T3 and the fourth terminal T4.

[0025] In this embodiment, the first to fifth MOSFETs 1, 14, 15, 24, and 25 are each an enhancement type N-channel MOSFET.

[0026] [Semiconductor relay module operation] Fig. 2 is a circuit diagram of a c-contact relay, and Fig. 3 is a diagram showing state transitions of the semiconductor relay module.

[0027] Fig. 4A is a diagram showing a signal transmission path in the semiconductor relay module when a high-voltage signal is input to the control terminal. Fig. 4B is a diagram showing a signal transmission path in the semiconductor relay module when a low-voltage signal is input to the control terminal. Fig. 5 is a diagram showing a change in potential over time in each part of the semiconductor relay module.

[0028] An equivalent circuit of the semiconductor relay module 100 is represented by a c-contact relay 3 shown in Fig. 2. The COM terminal in Fig. 2 corresponds to the second terminal T2 or the third terminal T3 of the semiconductor relay module 100, the NC (normally closed) terminal corresponds to the first terminal T1, and the NO (normally open) terminal corresponds to the fourth terminal T4.

[0029] When the COM terminal and the NC terminal are connected, the first terminal T1 and the second terminal T2 are electrically connected, and a signal is transmitted from the semiconductor relay module 100 to the load 4. When the COM terminal and the NO terminal are connected, the third terminal T3 and the fourth terminal T4 are electrically connected, and a signal is transmitted from the semiconductor relay module 100 to the load 5.

[0030] In actual operation, the signal input to the control terminal IN3 is changed while an H signal is input to the first input terminal IN1 and an L signal is input to the second input terminal IN2, as shown in Fig. 3. The H signal is a high-voltage signal having a first voltage, and the L signal is a low-voltage signal having a second voltage lower than the first voltage.

[0031] In this embodiment, the second input terminal IN2 is grounded. That is, the L signal input to the second input terminal IN2 is at the ground potential. Also, the H signal input to the first input terminal IN1 is at the same potential as the power supply voltage (Vcc) supplied to the semiconductor relay module 100.

[0032] When the signal input to the control terminal IN3 is an H signal, the gate (G) of the first MOSFET2 becomes a high potential (H potential), and the first MOSFET2 turns on. In other words, conduction occurs between the drain (D) and source (S) of the first MOSFET2. This H signal has the same potential as the H signal input to the first input terminal IN1, but the two may be different. It is sufficient that the first MOSFET2 turns on when an H signal is input to the control terminal IN3.

[0033] When the drain (D)-source (S) of the first MOSFET 2 becomes conductive, the first input terminal IN1 and the second input terminal IN2 become conductive with each other. As a result, a forward voltage is applied between the anode and cathode of the first LED 11 in the signal path shown in FIG. 4A. The H signal input to the first input terminal IN1 has a potential sufficiently higher than the threshold voltages of the first LED 11 and the second LED 21. Therefore, the first LED 11 emits light, and the first output light is incident on the first photodiode array 12.

[0034] As described above, a current is generated in the first photodiode array 12 that receives the first output light, and this current charges the first charge / discharge circuit 13. The voltage output from the first charge / discharge circuit 13 turns on the second MOSFET 14 and the third MOSFET 15, respectively, and the first terminal T1 and the second terminal T2 are mutually conductive.

[0035] On the other hand, in this case, since no current flows through the path passing through the second LED 21, the second LED 21 does not emit light, and the third terminal T3 and the fourth terminal T4 are in a non-conductive state.

[0036] Next, consider the case where the signal input to the control terminal IN3 is an L signal.

[0037] In this case, the gate (G) of the first MOSFET2 is at a low potential (L potential), the first MOSFET2 is turned off, and the drain (D)-source (S) of the first MOSFET2 is in a non-conductive state. Note that this L signal is at the same potential as the L signal input to the second input terminal IN2, that is, the ground potential, but the two may be different. It is sufficient that the first MOSFET2 is turned off when an L signal is input to the control terminal IN3.

[0038] Since the drain (D)-source (S) of the first MOSFET2 is not conductive, the first input terminal IN1 and the second input terminal IN2 are also not conductive. Meanwhile, the first input terminal IN1 and the control terminal IN3 are conductive to each other. As a result, a forward voltage is applied between the anode and the cathode of the second LED 21 in the signal path shown in FIG. 4B. Therefore, as described above, the second LED 21 emits light, and the second output light is incident on the second photodiode array 22.

[0039] A current is generated in the second photodiode array 22 that receives the second output light, and this current charges the second charge / discharge circuit 23. The voltage output from the second charge / discharge circuit 23 turns on the fourth MOSFET 24 and the fifth MOSFET 25, and the third terminal T3 and the fourth terminal T4 become conductive with each other.

[0040] On the other hand, in this case, since no current flows through the path passing through the first LED 11, the first LED 11 does not emit light, and the first terminal T1 and the second terminal T2 are in a non-conductive state.

[0041] When an L signal is input to the first input terminal IN1, even if an H signal is input to the control terminal IN3 and the first MOSFET 2 is turned on, a reverse bias state is created between the anode and cathode of the first LED 21, and the first LED 11 does not emit light. Also, since no current flows through the path that passes through the second LED 21, the second LED 21 does not emit light either.

[0042] In addition, when an L signal is input to the first input terminal IN1, if an L signal is input to the control terminal IN3 and the first MOSFET 2 is turned off, no current flows through the path that passes through the first LED 11, so the first LED 11 does not emit light. In addition, the first terminal T1 and the control terminal IN3 have the same potential (L potential), so the second LED 21 does not emit light either.

[0043] In other words, when an L signal is input to the first input terminal IN1, as shown in FIG. 3, regardless of the potential of the control terminal IN3, the first terminal T1 and the second terminal T2 are in a non-conductive state, and the third terminal T3 and the fourth terminal T4 are also in a non-conductive state.

[0044] Furthermore, in order for the semiconductor relay module 100 to function as a c-contact relay 3, it is necessary to ensure that there is no period during which the first terminal T1 and the second terminal T2 are in a conductive state and the third terminal T3 and the fourth terminal T4 are in a conductive state.

[0045] That is, as shown in FIG. 5, the transition period (t OFF ) ends, the third terminal T3 and the fourth terminal T4 go from a non-conductive state to a conductive state during the transition period (t ON ) until the end of a finite period (t OFF_ALL ) needs to be established.

[0046] Similarly, the transition period (t OFF ) ends, the first terminal T1 and the second terminal T2 go from a non-conductive state to a conductive state. ON ) until the end of a finite period (t OFF_ALL ) needs to be established.

[0047] In other words, in the semiconductor relay module 100, it is necessary to perform an operation in which one set of MOSFETs between the pair of the second MOSFET 14 and the third MOSFET 15 and the pair of the fourth MOSFET 24 and the fifth MOSFET 25 is turned off before the other set of MOSFETs is turned on. Such an operation is called a BBM (Break Before Make) operation.

[0048] [Effects, etc.] As described above, the semiconductor relay module 100 according to this embodiment includes the first input terminal IN1, the second input terminal IN2, the control terminal IN3, the first to fourth terminals T1 to T4, the first semiconductor relay 10, the second semiconductor relay 20, and the control circuit 1.

[0049] An H signal having a first voltage is applied to the first input terminal IN1, an L signal having a second voltage lower than the first voltage is applied to the second input terminal IN2, and a control signal is input to the control terminal IN3.

[0050] The first semiconductor relay 10 is connected to the first terminal T1 and the second terminal T2, and the second semiconductor relay 20 is connected to the third terminal T3 and the fourth terminal T4. The control circuit 1 is connected to the first input terminal IN1, the second input terminal IN2, the control terminal IN3, the first semiconductor relay 10, and the second semiconductor relay 20, and has a first MOSFET2.

[0051] The first MOSFET2 is switched on and off in response to a control signal. When the first MOSFET2 is on, the first input terminal IN1 and the second input terminal IN2 are electrically connected to each other, and the first semiconductor relay 10 electrically connects the first terminal T1 and the second terminal T2 to each other. When the first MOSFET2 is off, the first input terminal IN1 and the control terminal IN3 are electrically connected to each other, and the second semiconductor relay 20 electrically connects the third terminal T3 and the fourth terminal T4 to each other.

[0052] According to this embodiment, the c-contact relay 3 can be realized with a simple configuration. That is, a control circuit 1 having a first MOSFET 2, which is a change-over switch, is disposed on the input side, and the first MOSFET 2 is switched on and off in response to a control signal, thereby switching between a conductive state and a non-conductive state between the first terminal T1 and the second terminal T2, and between the third terminal T3 and the fourth terminal T4.

[0053] In this embodiment, the second input terminal IN2 is grounded. This eliminates the need to provide a new power supply that generates a voltage lower than the power supply voltage to operate the semiconductor relay module 100, thereby preventing an increase in costs.

[0054] In addition, the first semiconductor relay 10 and the second semiconductor relay 20 in this embodiment are both optically coupled relays.

[0055] That is, the first semiconductor relay 10 has a first LED (first light emitting element) 11, a first photodiode array (first light receiving element) 12, a first charge / discharge circuit 13, a second MOSFET 14, and a third MOSFET 15.

[0056] The first photodiode array 12 receives the first output light from the first LED 11. The first charge / discharge circuit 13 is connected to the first photodiode array 12. The second MOSFET 14 is connected to the first charge / discharge circuit 13 and a first terminal T1. The third MOSFET 15 is connected to the first charge / discharge circuit 13 and a second terminal T2.

[0057] The second semiconductor relay 20 has a second LED (second light emitting element) 21, a second photodiode array (second light receiving element) 22, a second charge / discharge circuit 23, a fourth MOSFET 24, and a fifth MOSFET 25.

[0058] The second photodiode array 22 receives the first output light from the second LED 21. The second charge / discharge circuit 23 is connected to the second photodiode array 22. The fourth MOSFET 24 is connected to the second charge / discharge circuit 23 and a third terminal T3. The fifth MOSFET 15 is connected to the second charge / discharge circuit 23 and a fourth terminal T4.

[0059] When the first photodiode array 12 receives the first output light from the first LED 11, the second MOSFET 14 and the third MOSFET 15 are turned on, and the first terminal T1 and the second terminal T2 are brought into electrical conduction with each other.

[0060] When the second photodiode array 22 receives the second output light from the second LED 21, the fourth MOSFET 24 and the fifth MOSFET 25 are turned on, and the third terminal T3 and the fourth terminal T4 are brought into electrical conduction with each other.

[0061] In this way, by using optically coupled relays for the first semiconductor relay 10 and the second semiconductor relay 20, the semiconductor relay module 100 can be made smaller and consume less power. Also, unlike a mechanical relay, there is no opening and closing of mechanical contacts, so high-speed switching can be performed on the output side in the semiconductor relay module 100. Furthermore, insulation between input and output is achieved, and there is no noise caused by opening and closing of mechanical contacts, so the operational stability of the semiconductor relay module 100 can be improved, and reliability can be improved. This allows the semiconductor relay module 100 to have a longer life.

[0062] <Variation 1> Fig. 6 is a circuit diagram of a semiconductor relay module according to Modification 1. For ease of explanation, in Fig. 6 and the following drawings, the same parts as those in the first embodiment are denoted by the same reference numerals, and detailed explanations thereof will be omitted.

[0063] The semiconductor relay module 101 of this modification differs from the semiconductor relay module 100 of the first embodiment shown in Figures 1A and 1B in the following respects: The second terminal T2 and the third terminal T3 shown in Figures 1A and 1B are shared, and are formed into one common terminal (hereinafter referred to as a COM terminal) T23 as shown in Figure 6.

[0064] Even when the semiconductor relay module 101 is configured in this manner, the operation is similar to that of the semiconductor relay module 100 shown in the first embodiment. Therefore, the same effects as those achieved by the configuration shown in the first embodiment can be achieved. That is, by switching the first MOSFET 2 on and off in response to a control signal, it is possible to switch between a conductive state and a non-conductive state between the first terminal T1 and the COM terminal T23, and between the COM terminal T23 and the fourth terminal T4. That is, the c-contact relay 3 can be realized with a simple configuration.

[0065] Furthermore, according to this modification, the number of terminals provided in the semiconductor relay module 101 can be made smaller than the number of terminals in the semiconductor relay module 100, so that the semiconductor relay module 101 can be made smaller in size than the configuration shown in the first embodiment.

[0066] (Embodiment 2) FIG. 7 is a circuit diagram of a first semiconductor relay module according to the second embodiment.

[0067] The first semiconductor relay module 102 of the present embodiment shown in Fig. 7 differs from the semiconductor relay module 100 of the first embodiment shown in Figs. 1A and 1B in that the control circuit 1 has resistive elements (first and second resistors) 71. In the following description, the first resistor refers to a resistive element having one end connected to the first input terminal IN1 and the other end connected to the first semiconductor relay 10. The second resistor refers to a resistive element having one end connected to the first input terminal IN1 and the other end connected to the second semiconductor relay 20. The third resistor refers to a resistive element having one end connected to the first resistor and the other end connected to the first semiconductor relay 10. The fourth resistor refers to a resistive element having one end connected to the first resistor and the other end connected to the second semiconductor relay 20.

[0068] 7, in the first semiconductor relay module 102, the resistive element 71 has one end connected to the first input terminal IN1 and the other end connected to the first semiconductor relay 10. More specifically, the resistive element 71 is disposed in a wiring path from the first input terminal IN1 to the first semiconductor relay 10 and the second semiconductor relay, at a position closer to the first input terminal IN1 than the branching portion of the wiring. Therefore, the other end of the resistive element 71 is connected to the anode of the first LED 11 and the anode of the second LED 21.

[0069] By providing the resistive element 71 at the aforementioned position of the control circuit 1, when the first MOSFET 2 is turned on, the resistance value of the transmission path of the signal flowing from the first input terminal IN1 to the second input terminal IN2 increases. Also, when the first MOSFET 2 is turned off, the resistance value of the transmission path of the signal flowing from the first input terminal IN1 to the control terminal IN3 increases.

[0070] In other words, by providing the resistive element 71, when the first MOSFET 2 is turned on, the current flowing through the first LED 11 can be made lower than that in the first embodiment. Also, when the first MOSFET 2 is turned off, the current flowing through the second LED 21 can be made lower than that in the first embodiment. As a result, the first semiconductor relay module 102 can reliably perform the BBM operation described above. This will be further described with reference to FIG. 8.

[0071] FIG. 8 is a diagram showing the relationship between the drive current of the first light-emitting element and the operating time of the second MOSFET, in which the horizontal axis represents the drive current of the first LED 11 and the vertical axis represents the operating time of the second MOSFET .

[0072] 8, the time Toff during which the second MOSFET 14 transitions from an on state to an off state (hereinafter referred to as the off time Toff) during the operation time of the second MOSFET 14 shows almost no dependency on the drive current of the first LED 11 and is approximately constant even if the drive current changes. Note that the off time Toff corresponds to the time toff in the time change in the potential between the first terminal T1 and the second terminal T2 shown in FIG.

[0073] On the other hand, during the operation time of the second MOSFET 14, the time Ton during which the second MOSFET 14 transitions from the off state to the on state (hereinafter referred to as the on-time Ton) is the time during which the drive current of the first LED 11 is a predetermined value I L1 When the on-time Ton becomes smaller than , it increases rapidly. The on-time Ton corresponds to the time ton in the time change of the potential between the first terminal T1 and the second terminal T2 shown in FIG. 5. L1 is a value higher than the threshold current at which the first LED 11 begins to emit light.

[0074] That is, the on-time Ton can be lengthened by appropriately setting the drive current of the first LED 11.

[0075] In the first semiconductor relay module 102, the first semiconductor relay 10 and the second semiconductor relay 20 have the same operating characteristics. That is, the second to fifth MOSFETs 14, 15, 24, and 25 all have the same operating characteristics. In addition, the first LED 11 and the second LED 21 have the same operating characteristics. Therefore, the relationship shown in FIG. 8 also applies between the first LED 11 and the third MOSFET 15. Similarly, the relationship shown in FIG. 8 also applies between the second LED 21 and the fourth MOSFET 24, and between the second LED 21 and the fifth MOSFET 25.

[0076] As is clear from FIGS. 5 and 8, by lengthening the on-time Ton, the transition period (t ONThis allows the time t OFF_ALL can be reliably secured.

[0077] That is, as shown in FIG. 7, by providing a resistor element 71 in the control circuit 1, when the first semiconductor relay module 102 is in operation, the tolerance time t OFF_ALL This ensures that the BBM operation can be performed reliably. As a result, the first semiconductor relay module 102 can be operated as the c-contact relay 3 reliably.

[0078] In order to adjust the drive current of the first LED 11 or the second LED 21, resistive elements can be disposed at various positions in the signal path passing through each of them.

[0079] 9A to 9E are circuit diagrams of second to fourth semiconductor relay modules according to the second embodiment.

[0080] 9A, in the second semiconductor relay module 103, the resistive element (first resistor) 72 is disposed in a path of the wiring from the first input terminal IN1 toward the first semiconductor relay 10 and the second semiconductor relay 20, and is disposed at a position closer to the first semiconductor relay 10 than the branching portion of the wiring. Specifically, the resistive element 72 is disposed midway along the wiring connecting the branching portion and the first semiconductor relay 10. In this case, one end of the resistive element 72 is connected to the first input terminal IN1.

[0081] On the other hand, the other end of the resistive element 72 is connected to the anode of the first LED 11 but not to the anode of the second LED 21. Therefore, the effect of reducing the drive current by the resistive element 72 extends to the first LED 11 but not to the second LED 21.

[0082] 9B. In this case, the resistive element 72 is disposed in the middle of the wiring that connects the first MOSFET 2 and the second semiconductor relay 20. In this case, one end of the resistive element 72 is connected to the first MOSFET 2. Meanwhile, the other end of the resistive element 72 is connected to the cathode of the first LED 11 but not to the cathode of the second LED 21. Therefore, the effect of reducing the drive current by the resistive element 72 extends to the first LED 11 but not to the second LED 21.

[0083] In the example shown in FIG. 9C, in the third semiconductor relay module 104, the resistive element (second resistor) 73 is disposed in the path of the wiring from the first input terminal IN1 toward the first semiconductor relay 10 and the second semiconductor relay, and is disposed at a position closer to the second semiconductor relay 20 than the branching portion of the wiring. Specifically, the resistive element 73 is disposed in the middle of the wiring connecting the branching portion and the second semiconductor relay 20. In this case, one end of the resistive element 73 is connected to the first input terminal IN1. Meanwhile, the other end of the resistive element 73 is connected to the anode of the second LED 21 but is not connected to the anode of the first LED 11. Therefore, the effect of reducing the drive current by the resistive element 73 extends to the second LED 21 but does not extend to the first LED 11.

[0084] 9D. In this case, the resistive element 73 is disposed in the middle of the wiring that connects the third input terminal IN3 and the second semiconductor relay 20. In this case, one end of the resistive element 73 is connected to the third input terminal IN3. Meanwhile, the other end of the resistive element 73 is connected to the cathode of the second LED 21 but not to the cathode of the first LED 11. Therefore, the effect of reducing the drive current by the resistive element 73 extends to the second LED 21 but not to the first LED 11.

[0085] As described above, in the first semiconductor relay module 102 shown in FIG. 7, the first semiconductor relay 10 and the second semiconductor relay 20 have the same operating characteristics. In this case, as shown in FIG. 7, a resistive element 71 is disposed in a signal path that passes through the first LED 11 and the second LED 21. In this manner, the drive currents of the first LED 11 and the second LED 21 can be reduced to the same extent. This allows the first semiconductor relay module 102 to reliably perform BBM operation.

[0086] However, when a different load is connected, the operating characteristics of the second semiconductor relay 20 may be made different from those of the first semiconductor relay 10. In this case, if the drive currents of the first LED 11 and the second LED 21 are made similarly low, the first semiconductor relay module 102 may not be able to perform a good BBM operation when opening and closing either the first semiconductor relay 10 or the second semiconductor relay 20.

[0087] The current value I shown in Figure 8 L1 is the current value when the current flowing through the first LED 11 during the on-time Ton and the current flowing through the second LED 21 during the off-time Toff become the same for the first LED 11. is the current value when the current flowing through the second LED 21 during the on-time Ton and the current flowing through the first LED 11 during the off-time Toff become the same for the second LED 21.

[0088] Current value I of the first LED11 L1 is the current value I of the second LED 21 L1 If the driving current of the first LED 11 is not reduced, the BBM operation may not be performed reliably.

[0089] In such a case, by arranging the resistive element 72 at the position shown in FIG. 9A or FIG. 9B, the drive current of the first LED 11 can be reduced, and the BBM operation can be reliably performed in the second semiconductor relay module 103.

[0090] In addition, the current value IL1 is the current value I L1 If the driving current of the second LED 21 is not reduced, the BBM operation may not be performed reliably.

[0091] In such a case, by arranging the resistive element 73 at the position shown in FIG. 9C or FIG. 9D, the drive current of the second LED 21 can be reduced, and the BBM operation can be reliably performed in the third semiconductor relay module 104.

[0092] 9E, both the resistive element 72 and the resistive element 73 may be disposed in the fourth semiconductor relay module 105. By appropriately setting the resistance values ​​of the resistive element 72 and the resistive element 73 and then disposing the resistive element 72 and the resistive element 73 at the positions shown in FIG. 9E, the drive currents of the first LED 11 and the second LED 21 can be appropriately adjusted independently. This allows the fourth semiconductor relay module 105 to reliably perform the BBM operation.

[0093] When the drive currents of the first LED 11 and the second LED 21 are adjusted independently, the arrangement of the resistive elements is not limited to the example shown in FIG. 9E.

[0094] For example, as shown in Fig. 10A, in a fifth semiconductor relay module 106, a resistive element (first and second resistors) 74 and a resistive element (third resistor) 75 may be arranged. The resistive element 74 is arranged in the same position as the resistive element 71 shown in Fig. 7, and the resistive element 75 is arranged in the same position as the resistive element 72 shown in Fig. 9A.

[0095] In the fifth semiconductor relay module 106, by arranging the resistive element 74, the drive current of the first LED 11 and the second LED 21 can be reduced in common. On the other hand, by arranging the resistive element 75, the drive current of the first LED 11 can be further reduced. In this case, too, by appropriately setting the resistance values ​​of the resistive element 74 and the resistive element 75, the drive current of the first LED 11 and the second LED 21 can be appropriately adjusted independently. This allows the fifth semiconductor relay module 106 to reliably perform the BBM operation.

[0096] 10B, a resistive element 74 and a resistive element (fourth resistor) 76 may be arranged in a sixth semiconductor relay module 107. The resistive element 74 is arranged in the same position as the resistive element 71 shown in FIG. 7, and the resistive element 76 is arranged in the same position as the resistive element 73 shown in FIG. 9B.

[0097] In the sixth semiconductor relay module 107, by arranging the resistive element 74, the drive current of the first LED 11 and the second LED 21 can be reduced in common. Meanwhile, by arranging the resistive element 76, the drive current of the second LED 21 can be further reduced. In this case, too, by appropriately setting the resistance values ​​of the resistive element 74 and the resistive element 76, the drive current of the first LED 11 and the second LED 21 can be appropriately adjusted independently. This allows the sixth semiconductor relay module 107 to reliably perform the BBM operation.

[0098] 10C, the seventh semiconductor relay module 108 may include a resistive element 74, a resistive element 75, and a resistive element 76. In this case, the drive currents of the first LED 11 and the second LED 21 can be appropriately adjusted independently by appropriately setting the resistance values ​​of the resistive elements 74 to 76. This allows the seventh semiconductor relay module 108 to reliably perform the BBM operation.

[0099] 7, the driving current of both the first LED 11 and the second LED 21 is reduced by providing one resistor element 71. This allows the first semiconductor relay module 102 to be made smaller and less expensive.

[0100] In Fig. 9E, resistive element 72 may be disposed in the same position as resistive element 72 shown in Fig. 9B, and resistive element 73 may be disposed in the same position as resistive element 73 shown in Fig. 9D. In Figs. 10A to 10C, resistive element 75 may be disposed in the same position as resistive element 72 shown in Fig. 9B, and resistive element 76 may be disposed in the same position as resistive element 73 shown in Fig. 9D.

[0101] (Embodiment 3) Fig. 11 is a diagram showing an outline of a semiconductor relay module according to embodiment 3. Fig. 12 is a diagram showing state transitions of the semiconductor relay module according to embodiment 3.

[0102] Fig. 13A is a diagram showing a signal transmission path in a semiconductor relay module when a high-voltage signal is input to a control terminal, and Fig. 13B is a diagram showing a signal transmission path in a semiconductor relay module when a low-voltage signal is input to a control terminal.

[0103] Fig. 14 is a circuit diagram of the semiconductor relay module according to the embodiment 3. Fig. 15 is another circuit diagram of the semiconductor relay module according to the embodiment 3.

[0104] In the first embodiment, a semiconductor relay module 100 equipped with two semiconductor relays 10, 20 has been described as an example. However, the number of semiconductor relays mounted in the semiconductor relay module may be greater. In the present embodiment, a semiconductor relay module 109 equipped with first to fourth semiconductor relays 10, 20, 30, 40 will be described as an example.

[0105] 11, the semiconductor relay module 109 has a first input terminal IN1, a second input terminal IN2, a control terminal IN3, and first to fourth semiconductor relays 10, 20, 30, and 40. The potentials of the first input terminal IN1 and the second input terminal IN2 during operation and the voltages of the H signal and L signal input to the control terminal IN3 are the same as those in the first embodiment.

[0106] The third semiconductor relay 30 has a fifth terminal T5 and a sixth terminal T6 as output terminals. The fourth semiconductor relay 40 has a seventh terminal T7 and an eighth terminal T8 as output terminals.

[0107] The circuit configurations of the third semiconductor relay 30 and the fourth semiconductor relay 40 are basically the same as those of the first semiconductor relay 10 and the second semiconductor relay 20 shown in FIG. 1B. In addition, the operation characteristics of the elements and circuits included in each are also basically the same as those of the first semiconductor relay 10 and the second semiconductor relay 20. That is, the operation characteristics of the sixth to ninth MOSFETs 34, 35, 44, and 45 shown in FIGS. 14 and 15 are respectively the same as those of the second to fifth MOSFETs 14, 15, 24, and 25 shown in FIG. 1B. The operation characteristics of the third and fourth LEDs 31 and 41 shown in FIGS. 14 and 15 are respectively the same as those of the first and second LEDs 11 and 21. The operation characteristics of the third and fourth photodiode arrays 32 and 42 are respectively the same as those of the first and second photodiode arrays 12 and 22. The operation characteristics of the third and fourth charge / discharge circuits 33 and 43 are respectively the same as those of the first and second charge / discharge circuits 13 and 23.

[0108] When the signal input to the control terminal IN3 is an H signal, as shown in FIG. 13A, in the semiconductor relay module 109, the first input terminal IN1 and the second input terminal IN2 are conductive with each other, and the signal is transmitted to a path passing through the first semiconductor relay 10 and the third semiconductor relay 30.

[0109] On the other hand, when the signal input to the control terminal IN3 is an L signal, as shown in FIG. 13B, in the semiconductor relay module 109, the first input terminal IN1 and the control terminal IN3 are conductive to each other, and the signal is transmitted to a path passing through the second semiconductor relay 20 and the fourth semiconductor relay 40.

[0110] 14, when the first to fourth semiconductor relays 10, 20, 30, 40 have the first to fourth LEDs 11, 21, 31, 41, respectively, when an H signal is input to the control terminal IN3 and the first MOSFET 2 is turned on, a drive current flows through the first LED 11 and the third LED 31, causing each to emit light. As a result, the second MOSFET 14, the third MOSFET 15, the sixth MOSFET 34, and the seventh MOSFET 35 are turned on. Meanwhile, the fourth MOSFET 24, the fifth MOSFET 25, the eighth MOSFET 44, and the ninth MOSFET 45 are turned off.

[0111] 12, the first terminal T1 and the second terminal T2 are electrically connected to each other, and the fifth terminal T5 and the sixth terminal T6 are electrically connected to each other. Meanwhile, the third terminal T3 and the fourth terminal T4 are not electrically connected to each other, and the seventh terminal T7 and the eighth terminal T8 are not electrically connected to each other.

[0112] Furthermore, when an L signal is input to the control terminal IN3 and the first MOSFET 2 is turned off, a drive current flows through the second LED 21 and the fourth LED 41, causing each to emit light. As a result, the fourth MOSFET 24, the fifth MOSFET 25, the eighth MOSFET 44, and the ninth MOSFET 45 are each turned on. Meanwhile, the second MOSFET 14, the third MOSFET 15, the sixth MOSFET 34, and the seventh MOSFET 35 are each turned off.

[0113] 12, the third terminal T3 and the fourth terminal T4 are electrically connected to each other, and the seventh terminal T7 and the eighth terminal T8 are electrically connected to each other. Meanwhile, the first terminal T1 and the second terminal T2 are not electrically connected to each other, and the fifth terminal T5 and the sixth terminal T6 are not electrically connected to each other.

[0114] When an L signal is input to the first input terminal IN1, the first to fourth semiconductor relays 10, 20, 30, 40 are all turned off regardless of the potential of the control terminal IN3. That is, there is no electrical continuity between the first terminal T1 and the second terminal T2, between the third terminal T3 and the fourth terminal T4, between the fifth terminal T5 and the sixth terminal T6, and between the seventh terminal T7 and the eighth terminal T8.

[0115] In the semiconductor relay module 109, the arrangement and number of the light-emitting elements may be changed. For example, as shown in Fig. 14, the first to fourth semiconductor relays 10, 20, 30, 40 may be provided with the first to fourth LEDs 11, 21, 31, 41, respectively. In this case, the first LED 11 and the third LED 31 are arranged in the signal path on the input side when the first input terminal IN1 and the second input terminal IN2 are conductive with each other. Also, the second LED 21 and the fourth LED 41 are arranged in the signal path on the input side when the first input terminal IN1 and the control terminal IN3 are conductive with each other.

[0116] On the other hand, as shown in Fig. 15, one LED may be arranged on each of the signal path when the first input terminal IN1 and the second input terminal IN2 are conductive with each other and the signal path when the first input terminal IN1 and the control terminal IN3 are conductive with each other. In the former case, either the first LED 11 or the third LED 31 is arranged, and in the latter case, either the second LED 21 or the fourth LED 41 is arranged. In the example shown in Fig. 15, the shape of the translucent resin 260 (see Figs. 22 and 23) described later is changed so that output light from one light-emitting element is simultaneously incident on two light-receiving elements.

[0117] In the semiconductor relay module 109 shown in FIG. 11, the terminals may be made common as shown in the first modification.

[0118] Fig. 16 is yet another circuit diagram of the semiconductor relay module according to embodiment 3. In the semiconductor relay module 110 shown in Fig. 16, the second terminal T2 of the first semiconductor relay 10 and the seventh terminal T7 of the fourth semiconductor relay 40 in the semiconductor relay module 109 shown in Fig. 14 are combined into one COM terminal T27. Also, the third terminal T3 of the second semiconductor relay 20 and the sixth terminal T6 of the third semiconductor relay 30 are combined into one COM terminal T36.

[0119] This provides the same effect as the configuration shown in Modification 1. That is, the number of terminals provided in semiconductor relay module 110 can be made smaller than the number of terminals in semiconductor relay module 109, so that semiconductor relay module 110 can be made smaller in size than the configuration shown in embodiment 2.

[0120] Although not shown, it goes without saying that a similar terminal can be made common in the semiconductor relay module 109 shown in FIG.

[0121] <Variation 2> FIG. 17 is a circuit diagram of a semiconductor relay module according to the second modification, and FIG. 18 is another circuit diagram of the semiconductor relay module according to the second modification.

[0122] 17 and 18 differs from the semiconductor relay module 109 shown in the third embodiment in that the semiconductor relay module 111 of this modification further includes a fifth semiconductor relay 50 and a sixth semiconductor relay 60. The fifth semiconductor relay 50 has a ninth terminal T9 and a tenth terminal T10, and the sixth semiconductor relay 60 has an eleventh terminal T11 and a twelfth terminal T12.

[0123] The circuit configurations of the fifth semiconductor relay 50 and the sixth semiconductor relay 60 are basically the same as those of the first to fourth semiconductor relays 10, 20, 30, and 40 shown in Figs. 14 and 15. In addition, the operation characteristics of the elements and circuits included in each are also basically the same as those of the first to fourth semiconductor relays 10, 20, 30, and 40. That is, the operation characteristics of the tenth to thirteenth MOSFETs 54, 55, 64, and 65 shown in Figs. 17 and 18 are respectively the same as those of the second to ninth MOSFETs 14, 15, 24, 25, 34, 35, 44, and 45 shown in Figs. 14 and 15. The operation characteristics of the fifth and sixth LEDs 51 and 61 shown in Figs. 17 and 18 are respectively the same as those of the first to fourth LEDs 11, 21, 31, and 41. The operation characteristics of the fifth and sixth photodiode arrays 52 and 62 are respectively the same as those of the first to fourth photodiode arrays 12, 22, 32, and 42. The fifth and sixth charge / discharge circuits 53, 63 have the same operating characteristics as the first to fourth charge / discharge circuits 13, 23, 33, 43, respectively.

[0124] When the signal input to the control terminal IN3 is an H signal, in the semiconductor relay module 111, the first input terminal IN1 and the second input terminal IN2 are conductive with each other, and the signal is transmitted to a path passing through the first semiconductor relay 10, the third semiconductor relay 30, and the fifth semiconductor relay 50. As a result, in the example shown in Fig. 17, the first LED 11, the third LED 31, and the fifth LED 51 each emit light, and the first terminal T1 and the second terminal T2, the fifth terminal T5 and the sixth terminal T6, and the ninth terminal T9 and the tenth terminal T10 each are conductive with each other.

[0125] On the other hand, no current flows through the second LED 21, the fourth LED 41, and the sixth LED 61. As a result, the third terminal T3 and the fourth terminal T4, the seventh terminal T7 and the eighth terminal T8, and the eleventh terminal T11 and the twelfth terminal T12 are each in a non-conductive state.

[0126] On the other hand, when the signal input to the control terminal IN3 is an L signal, in the semiconductor relay module 111, the first input terminal IN1 and the control terminal IN3 are conductive with each other, and the signal is transmitted to a path passing through the second semiconductor relay 20, the fourth semiconductor relay 40, and the sixth semiconductor relay 60. As a result, in the example shown in Fig. 17, the second LED 21, the fourth LED 41, and the sixth LED 61 each emit light, and the third terminal T3 and the fourth terminal T4, the seventh terminal T7 and the eighth terminal T8, and the eleventh terminal T11 and the twelfth terminal T12 each are conductive with each other.

[0127] On the other hand, no current flows through the first LED 11, the third LED 31, and the fifth LED 51. As a result, the first terminal T1 and the second terminal T2, the fifth terminal T5 and the sixth terminal T6, and the ninth terminal T9 and the tenth terminal T10 are each in a non-conductive state.

[0128] As shown in Fig. 18, one LED may be arranged on each of the signal path when the first input terminal IN1 and the second input terminal IN2 are conductive with each other and the signal path when the first input terminal IN1 and the control terminal IN3 are conductive with each other. In the former case, one of the first LED 11, the third LED 31, and the fifth LED 51 is arranged, and in the latter case, one of the second LED 21, the fourth LED 41, and the sixth LED 61 is arranged. In the example shown in Fig. 18, the shape of the translucent resin 260 (see Figs. 22 and 23) described later is changed so that output light from one light-emitting element is simultaneously incident on three light-receiving elements.

[0129] (Embodiment 4) Fig. 19 is a schematic diagram showing the structure of a semiconductor chip according to embodiment 4. Fig. 20 is a diagram showing an input side lead frame as viewed from below. Fig. 21 is a diagram showing an output side lead frame as viewed from above.

[0130] Fig. 22 is a schematic diagram showing the positional relationship between the first LED, the second LED, the first light receiving IC, the second light receiving IC, and the first MOSFET. Fig. 23 is a schematic cross-sectional view showing the structure between the first LED, the second LED, and the first light receiving IC and the second light receiving IC.

[0131] For ease of explanation, the shapes of the input side lead frame (first substrate) 210, the output side lead frame (second substrate) 220, and the housing 240 in FIGS. 19 to 23 are different from the actual shapes.

[0132] In this embodiment and the third and fourth modifications, the direction in which the first input lead 211 and the first output lead 221 face each other may be referred to as the X direction, the arrangement direction of the first, third and second input leads 211, 213 and 212 may be referred to as the Y direction, and the direction perpendicular to the X direction and the Y direction may be referred to as the Z direction. The Z direction is the direction in which the first LED 11 and the first light receiving IC 81 face each other. In the Z direction, the side on which the first LED 11 is provided may be referred to as the top, upper side or upper side, and the side on which the first light receiving IC 81 is provided may be referred to as the bottom, lower side or lower side.

[0133] In this specification, "orthogonal," "parallel," or "the same" means orthogonal, parallel, or the same, including the assembly tolerances and processing tolerances of the semiconductor chip 120 and its components, and does not mean that the objects being compared are orthogonal, parallel, or the same in the strict sense.

[0134] The semiconductor chip 120 shown in Fig. 19 is a device in which the elements constituting the semiconductor relay module 112 are mounted separately on an input side lead frame 210 and an output side lead frame 220, and the whole is resin molded into one package. Note that the semiconductor relay module 112 of this embodiment is a semiconductor relay module 102 shown in Fig. 7 in which the second terminal T2 and the third terminal T3 are shared to form one COM terminal T23 as shown in Fig. 6.

[0135] The semiconductor chip 120 includes a semiconductor relay module 112 further including the input side lead frame 210 and the output side lead frame 220 described above, and a housing 240. Both the input side lead frame 210 and the output side lead frame 220 are members obtained by processing a thin copper plate. The surface of the thin plate may be plated with another metal.

[0136] The input side lead frame 210 has first to third input leads 211 to 213, a first LED mounting portion 214, a second LED mounting portion 215, and a first MOSFET mounting portion 216. The first input lead 211, the third input lead 213, and the second input lead 212 are arranged in this order at intervals from each other in the Y direction.

[0137] In the first to third input leads 211 to 213, one end exposed to the outside of the housing 240 corresponds to the first to third terminals T1 to T3 described above. The one end of the first to third input leads 211 to 213 is exposed to the outside from a side surface of the housing 240. The first to third input leads 211 to 213 are each bent upward inside the housing 240. The other end of each of the first to third input leads 211 to 213 extends inside the housing 240 so as to be parallel to the upper surface of the housing 240.

[0138] In addition, the first LED mounting portion 214, the second LED mounting portion 215, and the first MOSFET mounting portion 216 are located at the same height as the other ends of the first to third input leads 211 to 213, respectively, in the Z direction, with the lower surface of the housing 240 as a reference.

[0139] The first input lead 211 is divided into a first portion 211a and a second portion 211b inside the housing 240. The second portion 211b is disposed at a distance from the first portion 211a in the X direction, and the resistive element 71 is disposed across the distance. The resistive element 71 is connected to the first portion 211a and the second portion 211b. The second portion 211b is bent in the Y direction from the connection portion with the resistive element 71, and extends in the X direction toward the second input lead 212 and surrounds the first LED mounting portion 214.

[0140] The second input lead 212 extends along the X direction inside the housing 240, and also extends along the Y direction so as to surround the first input lead 211 when viewed from below.

[0141] 20, the cathode of the first LED 11 is mounted on the lower surface of the first LED mounting portion 214 with a conductive adhesive such as silver paste (not shown). The anode of the first LED 11 is connected to the second portion 211b of the first input lead 211 with a metal wire 230 (hereinafter simply referred to as the wire 230). In addition, the first LED mounting portion 214 is connected to the first MOSFET mounting portion 216 with the wire 230.

[0142] 20 , the second LED mounting portion 215 is disposed at a distance from the first LED mounting portion 214 in the Y direction. The first LED mounting portion 214 is disposed near the second input lead 212, and the second LED mounting portion 215 is disposed near the first input lead 211.

[0143] 20, the cathode of the second LED 21 is mounted on the lower surface of the second LED mounting portion 215 with a conductive adhesive. The anode of the second LED 21 is connected to the second portion 211b of the first input lead 211 with a wire 230. In addition, the second LED mounting portion 215 is connected to the second input lead 212 with the wire 230.

[0144] The first MOSFET mounting portion 216 is disposed between the first LED mounting portion 214 and the second LED mounting portion 215 and spaced apart from each other in the Y direction when viewed from below.

[0145] That is, the first MOSFET 2 is disposed between the first LED 11 and the second LED 21. In this manner, a certain distance or more can be secured between the first light-transmitting resin 261 and the second light-transmitting resin 262 (see FIGS. 22 and 23), and the light-shielding resin 250 (see FIG. 23) is reliably disposed between the first light-transmitting resin 261 and the second light-transmitting resin 262. This ensures that the first light-transmitting resin 261 and the second light-transmitting resin 262 are optically separated from each other.

[0146] A drain electrode (not shown) formed on the back surface of the first MOSFET 2 is mounted on the lower surface of the first MOSFET mounting portion 216 by a conductive adhesive (not shown). A source electrode 2s of the first MOSFET 2 is connected to the third input lead 213 by a wire 230. A gate electrode 2g of the first MOSFET 2 is connected to the second input lead 212 by the wire 230.

[0147] The output side lead frame 220 has first to third output leads 221 to 223, a first light receiving IC mounting portion 224, a second light receiving IC mounting portion 225, a second MOSFET mounting portion 226, a third MOSFET mounting portion 227 and a fifth MOSFET mounting portion 228.

[0148] In the first to third output leads 221 to 223, one end exposed to the outside of the housing 240 corresponds to the first terminal T1, the COM terminal T23, and the fourth terminal T4 described above. The one end of the first to third output leads 221 to 223 is exposed to the outside from a side surface of the housing 240. The first to third output leads 221 to 223 are each bent downward inside the housing 240. The other end of each of the first to third output leads 221 to 223 extends inside the housing 240 so as to be parallel to the bottom surface of the housing 240.

[0149] The second MOSFET mounting portion 226, the third MOSFET mounting portion 227, and the fifth MOSFET mounting portion 228 respectively correspond to the other ends of the first to third output leads 221 to 223 arranged inside the housing 240. The first light-receiving IC mounting portion 224, the second light-receiving IC mounting portion 225, the second MOSFET mounting portion 226, the third MOSFET mounting portion 227, and the fifth MOSFET mounting portion 228 are located at the same height in the Z direction with the lower surface of the housing 240 as the reference.

[0150] 21, a first light receiving IC 81 is mounted on the upper surface of the first light receiving IC mounting portion 224 with a conductive adhesive, and a second light receiving IC 82 is mounted on the upper surface of the second light receiving IC mounting portion 225 with a conductive adhesive. The first light receiving IC 81 is a circuit component formed on the same semiconductor substrate as the first photodiode array 12 and the first charge / discharge circuit 13 shown in FIG. 1B. Similarly, the second light receiving IC 82 is a circuit component formed on the same semiconductor substrate as the second photodiode array 22 and the second charge / discharge circuit 23 shown in FIG. 1B.

[0151] Also, a drain electrode (not shown) formed on the back surface of the second MOSFET 14 is mounted on the upper surface of the second MOSFET mounting portion 226 with a conductive adhesive (not shown). A drain electrode (not shown) formed on the back surface of the third MOSFET 15 is mounted on the upper surface of the third MOSFET mounting portion 227 with a conductive adhesive (not shown). A drain electrode (not shown) formed on the back surface of the fourth MOSFET 24 is mounted on the upper surface of the third MOSFET mounting portion 227 with a conductive adhesive (not shown). A drain electrode (not shown) formed on the back surface of the fifth MOSFET 25 is mounted on the upper surface of the fifth MOSFET mounting portion 228 with a conductive adhesive (not shown).

[0152] The source electrode 81s of the first light receiving IC 81 is connected to one of the two source electrodes 14s, 14s of the second MOSFET 14 via a wire 230 and the first light receiving IC mounting portion 224. One of the two drain electrodes 81d, 81d of the first light receiving IC 81 is connected to the gate electrode 14g of the second MOSFET 14 via a wire 230. The other of the two drain electrodes 81d, 81d of the first light receiving IC 81 is connected to the gate electrode 15g of the third MOSFET 15 via a wire 230. The other of the two source electrodes 14s, 14s of the second MOSFET 14 is connected to the source electrode 15s of the third MOSFET 15 via a wire 230.

[0153] The source electrode 82s of the second light receiving IC 82 is connected to one of the two source electrodes 25s, 25s of the fifth MOSFET 25 via a wire 230 and the second light receiving IC mounting portion 225. One of the two drain electrodes 82d, 82d of the second light receiving IC 82 is connected to the gate electrode 24g of the fourth MOSFET 24 via a wire 230. The other of the two drain electrodes 82d, 82d of the second light receiving IC 82 is connected to the gate electrode 25g of the fifth MOSFET 25 via a wire 230. The other of the two source electrodes 25s, 25s of the fifth MOSFET 25 is connected to the source electrode 24s of the fourth MOSFET 24 via a wire 230.

[0154] The housing 240 covers the semiconductor relay module 112, specifically, the input lead frame 210 and each element mounted thereon and the output lead frame 220 and each element mounted thereon, and fixes the positions of each.

[0155] 23, the housing 240 is composed of an insulating light-shielding resin 250 and a light-transmitting resin 260. The light-shielding resin 250 is, for example, an epoxy resin containing a black pigment. However, the light-shielding resin is not particularly limited to this and may be any material that blocks light.

[0156] 22 and 23, the light-transmitting resin 260 is composed of a first light-transmitting resin 261 and a second light-transmitting resin 262. The light-transmitting resin 260 is collectively referred to as the light-transmitting resin 260, including a third light-transmitting resin 263 and a fourth light-transmitting resin 264 (see FIG. 25 for both) described later. The light-transmitting resin 260 is, for example, a transparent silicone resin. However, the light-transmitting resin 260 is not particularly limited thereto, and may be any insulating resin that is transparent to at least the output light from the first and second LEDs 11, 21.

[0157] As shown in FIG. 22 and FIG. 23, a first light-transmitting resin 261 is provided between the light-emitting surface of the first LED 11 and the first light-receiving IC 81 and light-receiving surface. A second light-transmitting resin 262 is provided between the light-emitting surface of the second LED 21 and the second light-receiving IC 82 and light-receiving surface. A light-shielding resin 250 is provided so as to cover the surfaces of the first light-transmitting resin 261 and the second light-transmitting resin 262. In this manner, the first light-transmitting resin 261 constitutes an optical coupling section that optically couples the first photodiode array 12 provided in the first light-receiving IC 81 and the first LED 11. Similarly, the second light-transmitting resin 262 constitutes an optical coupling section that optically couples the second photodiode array 22 provided in the second light-receiving IC 82 and the second LED 21.

[0158] The light-shielding resin 250 also covers the surfaces of the first to fourth MOSFETs 14, 15, 24, and 25, the resistive element 71, the input lead frame 210, and the output lead frame 220.

[0159] In the present embodiment, an example has been shown in which the semiconductor relay module 112 has only the resistive element 71, but as shown in Figures 9A to 9E and 10A to 10C, the semiconductor relay module 112 may have at least one of the resistive elements 72 to 76. Alternatively, the semiconductor relay module 112 may have a configuration in which no resistive element is included.

[0160] As shown in the first embodiment, the semiconductor relay module 112 may have four terminals on the output side. In this case, an output lead corresponding to the second terminal T2 and an output lead corresponding to the third terminal T3 are provided instead of the COM terminal T23. The connection of the wire 230 on the output side is also different from that shown in FIG.

[0161] As described above, the semiconductor relay module 112 according to this embodiment further includes the input side lead frame 210 and the output side lead frame 220 in addition to the components of the semiconductor relay module shown in the first and second embodiments and the first modified example.

[0162] At least a first LED 11, a second LED 21, and a first MOSFET 2 are arranged on the input side lead frame 210. A first light receiving IC 81, a second light receiving IC 82, and second to fifth MOSFETs 14, 15, 24, and 25 are arranged on the output side lead frame 220.

[0163] The first LED mounting portion 214 of the input side lead frame 210 and the first light receiving IC mounting portion 224 of the output side lead frame 220 face each other with a gap in the Z direction. Similarly, the second LED mounting portion 215 of the input side lead frame 210 and the second light receiving IC mounting portion 225 of the output side lead frame 220 face each other with a gap in the Z direction.

[0164] That is, the first LED 11 and the first photodiode array 12 provided in the first light receiving IC 81 face each other with a gap in the Z direction. The second LED 21 and the second photodiode array 22 provided in the second light receiving IC 82 face each other with a gap in the Z direction.

[0165] Moreover, the semiconductor chip 120 according to this embodiment includes a semiconductor relay module 112 and a housing 240 that covers the semiconductor relay module 112 .

[0166] The housing 240 includes a light-shielding resin 250 and a light-transmitting resin 260. The light-transmitting resin 260 includes a first light-transmitting resin 261 and a second light-transmitting resin 262.

[0167] The first light-transmitting resin 261 is provided between the first LED 11 and the first light receiving IC 81, and covers the light emitting surface of the first LED 11 and the light receiving surface of the first photodiode array 12 provided in the first light receiving IC 81.

[0168] The second light-transmitting resin 262 is provided between the second LED 21 and the second light receiving IC 82, and covers the light emitting surface of the second LED 21 and the light receiving surface of the second photodiode array 22 provided in the second light receiving IC 82.

[0169] The light-shielding resin 250 is provided between the first light-transmitting resin 261 and the second light-transmitting resin 262, and optically separates the first light-transmitting resin 261 and the second light-transmitting resin 262.

[0170] By configuring the semiconductor relay module 112 and the semiconductor chip 120 in this manner, the semiconductor relay module 112 functions as an input / output isolated type semiconductor relay module in which the input side and the output side are electrically isolated and the terminals on the output side are optically coupled to each other to provide electrical continuity or non-conductivity.

[0171] In addition, the first MOSFET 2 is disposed between the first LED 11 and the second LED 21 when viewed along the Z direction.

[0172] This simplifies the shape of the input lead frame 210. Also, the number of wires 230 that electrically connect elements can be reduced. This allows the semiconductor relay module 112 and the semiconductor chip 120 to be made smaller.

[0173] The structure of the semiconductor chip on which the semiconductor relay module is mounted is not particularly limited to those shown in FIGS.

[0174] Fig. 24 is a schematic diagram showing another structure of a semiconductor chip. In the semiconductor chip 130 shown in Fig. 24, first to third semiconductor packages 91 to 93 are mounted on a wiring board 270. The first to third semiconductor packages 91 to 93 including the wiring board 270 are covered with a housing 240 made of a light-shielding resin 250.

[0175] The first semiconductor package 91 is a device in which the first semiconductor relay 10 is housed in a single package, and the second semiconductor package 92 is a device in which the second semiconductor relay 20 is housed in a single package. In addition, the third semiconductor package 93 is a device in which the first MOSFET 2 is resin-sealed.

[0176] The elements in the first semiconductor package 91, the elements in the second semiconductor package 92, and the first MOSFET 2 in the third semiconductor package 93 are electrically connected via wiring (not shown) provided on the wiring board 270. In other words, the first to third semiconductor packages 91 to 93 and the wiring board 270 form a semiconductor relay module.

[0177] In the semiconductor chip 130 as well, similarly to the semiconductor chip 120, the semiconductor relay module accommodated inside the housing can be made to function as an input / output isolated type semiconductor relay module.

[0178] <Variation 3> FIG. 25 is a schematic diagram showing the positional relationship between the first to fourth LEDs, the first to fourth light receiving ICs, and the first MOSFET according to the third modification.

[0179] The semiconductor chip 140 shown in Fig. 25 is obtained by adding an input side lead frame 210 and an output side lead frame 220 to the semiconductor relay module 109 of the second embodiment shown in Figs. 11, 14 and 15, and covering them with a housing 240. For ease of explanation, the input side lead frame 210, the output side lead frame 220 and the light-shielding resin 250 are omitted from Fig. 25.

[0180] 25, at least first to fourth LEDs 11, 21, 31, 41 and a first MOSFET 2 are arranged on an input side lead frame 210. First to fourth light receiving ICs 81 to 84 and second to ninth MOSFETs 14, 15, 24, 25, 34, 35, 44, 45 are arranged on an output side lead frame 220.

[0181] The first LED 11 and the first photodiode array 12 provided in the first light receiving IC 81 face each other with a gap in the Z direction. The second LED 21 and the second photodiode array 22 provided in the second light receiving IC 82 face each other with a gap in the Z direction. The third LED 31 and the third photodiode array 32 provided in the third light receiving IC 83 face each other with a gap in the Z direction. The fourth LED 41 and the fourth photodiode array 42 provided in the fourth light receiving IC 42 face each other with a gap in the Z direction.

[0182] In the semiconductor chip 140, the light-transmitting resin 260 includes first to fourth light-transmitting resins 261 to 264.

[0183] The first light-transmitting resin 261 is provided between the first LED 11 and the first light receiving IC 81, and covers the light emitting surface of the first LED 11 and the light receiving surface of the first photodiode array 12 provided in the first light receiving IC 81.

[0184] The second light-transmitting resin 262 is provided between the second LED 21 and the second light receiving IC 82, and covers the light emitting surface of the second LED 21 and the light receiving surface of the second photodiode array 22 provided in the second light receiving IC 82.

[0185] The third light-transmitting resin 263 is provided between the third LED 31 and the third light receiving IC 83 , and covers the light emitting surface of the third LED 31 and the light receiving surface of the third photodiode array 32 provided in the third light receiving IC 83 .

[0186] The fourth light-transmitting resin 264 is provided between the fourth LED 41 and the fourth light receiving IC 84, and covers the light emitting surface of the fourth LED 41 and the light receiving surface of the fourth photodiode array 42 provided in the fourth light receiving IC 84.

[0187] By configuring the semiconductor chip 140 in this manner, the semiconductor relay module accommodated inside the housing 240 can function as an input / output insulated type semiconductor relay module.

[0188] Further, when viewed along the Z direction, the first MOSFET 2 is sandwiched between a first LED 11 and a fourth LED 41 on one side, and a second LED 21 and a third LED 31 on the other side.

[0189] This simplifies the shape of the input lead frame 210. Also, the number of wires 230 that electrically connect elements can be reduced. This allows the semiconductor relay module, and further the semiconductor chip 140, to be made smaller.

[0190] <Modification 4> Fig. 26A is a schematic diagram of a first input lead according to Modification 4 as viewed from the Z direction. Fig. 26B is a cross-sectional view taken along line XXIVB-XXVIB in Fig. 26A. Fig. 27 is a schematic diagram of another first input lead according to Modification 4 as viewed from the Z direction. Fig. 28 is a schematic diagram of a further first input lead according to Modification 4 as viewed from the Z direction.

[0191] In the semiconductor chip 120 shown in embodiment 4, the resistive element 71 is connected to the first portion 211a and the second portion 211b of the first input lead 211 by a conductive adhesive 280 such as metal solder or silver paste (see Figures 26A to 28).

[0192] However, since the metal solder has fluidity when melted and the silver paste has fluidity when applied, they may overflow from the first portion 211a or the second portion 211b. When this happens, the overflowing conductive adhesive 280 may remain inside the housing 240. When the conductive adhesive 280 is a metal solder, the metal solder remaining inside the housing 240 will remelt when the semiconductor chip 120 is mounted on a mounting board (not shown) with another metal solder. In this case, there is a risk that the metal solder will flow out to the outside of the housing 240 via the input side lead frame 210 or the output side lead frame 220.

[0193] If this occurs, there is a risk of short-circuiting the terminals of the semiconductor relay module 112 outside the housing 240. For example, there is a risk of short-circuiting between the input side lead frame 210 and the output side lead frame 220. Or there is a risk of short-circuiting between the first input lead 211 and the third input lead 213. If such a short circuit occurs, the semiconductor relay module 112 will not operate normally.

[0194] Therefore, as shown in this modified example, in order to prevent the conductive adhesive 280 from spilling out, the shape of the first portion 211a is modified.

[0195] 26A and 26B, a recess 211b1 is provided in the second portion 211b near the connection portion with the resistive element 71. Even if the conductive adhesive 280 flows out from the connection portion when the resistive element 71 is connected, the conductive adhesive 280 can be stored in the recess 211b1 to prevent the conductive adhesive 280 from flowing out from the first output lead 211. This prevents a short circuit between the input side lead frame 210 and the output side lead frame 220 or a short circuit between the first input lead 211 and the third input lead 213, allowing the semiconductor relay module 112 to operate cleanly.

[0196] As described above, the resistor element 71 is provided to adjust the drive current of the first LED 11 and the second LED 21.

[0197] When the resistive element 71 is adhered to the first input lead 211 with the conductive adhesive 280, even if the conductive adhesive 280 protrudes, there is no risk of the conductive adhesive 280 adhering to an element located below the second portion 211b, such as the first light receiving IC 82.

[0198] In such a case, instead of the recess 211b1, a through hole 211b2 may be provided in the second portion 211b as shown in Figure 27. Alternatively, a notch 211b3 may be provided in the second portion 211b as shown in Figure 28.

[0199] In these cases, a short circuit between the input lead frame 210 and the output lead frame 220, or between the first input lead 211 and the third input lead 213, can be prevented, allowing the semiconductor relay module 112 to operate normally.

[0200] In this modification, the case where the resistive element 71 is connected to the first input lead 211 has been shown as an example, but any one of the resistive elements 71 to 76 shown in the second embodiment or a plurality of the resistive elements 71 to 76 may be connected to any one of the input lead frames 210. In this case, at least one of a recess, a through hole, and a notch for preventing the conductive adhesive from protruding may be provided in the vicinity of the connection portion of the resistive element in the input lead frame 210.

[0201] (Other embodiments) New embodiments can be formed by appropriately combining the components shown in the first to fourth embodiments and the first to fourth modifications. For example, the semiconductor relay module 111 of the second modification shown in Figs. 17 and 18 may be covered with a housing 240 to form a semiconductor chip. In the semiconductor relay module 111 of the second modification shown in Figs. 17 and 18, the terminals may be shared as shown in the first modification and Fig. 16. In this case, the second terminal T2 and the seventh terminal T7, the tenth terminal T10 and the eleventh terminal T11, the second terminal T2 and the seventh terminal T7, and the third terminal T3 and the sixth terminal T6 are each shared to become a COM terminal.

[0202] Furthermore, one or more of the resistive elements 71 to 76 shown in the second embodiment may be disposed in the semiconductor relay module 109 shown in the third embodiment or the semiconductor relay module 110 shown in the second modification. In this case, one or more resistive elements are disposed in any of the paths that run from the first input terminal IN1 through the third to sixth LEDs 31, 41, 51, 61 of the third to sixth semiconductor relays 30, 40, 50, 60. In this way, it is possible to achieve the same effects as those achieved by the configuration shown in the second embodiment.

[0203] In addition, in the first to fourth embodiments and the first to fourth modifications, the second to thirteenth MOSFETs 14, 15, 24, 25, 34, 35, 44, 45, 54, 55, 64, and 65 are enhancement-type N-channel MOSFETs, respectively, but they may be depletion-type N-channel MOSFETs.

[0204] In the fourth embodiment and the fourth modification, a chip resistor is used as the resistor element 71, and the resistor element 71 is arranged to straddle the first portion 211a and the second portion 211b of the first input lead 211. However, the resistor element 71 is not particularly limited to a chip resistor. The arrangement of the resistor element 71 is not limited to between the first portion 211a and the second portion 211b. For example, as shown in FIG. 29, the resistor element 71 may be mounted on the surface of the second portion 211b with a conductive adhesive 280, and the resistor element 71 and the first portion 211a may be connected with a wire 230. Although not shown, the resistor element 71 may be mounted on the surface of the first portion 211a with a conductive adhesive 280, and the resistor element 71 and the second portion 211b may be connected with a wire 230.

[0205] Also, different points of the first input lead 211 may be connected by the resistive element 71 via the wire 230. Similarly, the resistive elements 72 to 76 shown in the second embodiment may also be connected to different points of the input side lead frame 210 via the wire 230.

[0206] FIG. 30 is a diagram showing state transitions of a semiconductor relay module according to another embodiment, in which the second to fifth MOSFETs 14, 15, 24, 25, 34, and 35 in the semiconductor relay module 100 shown in FIG. 1B are depletion-type N-channel MOSFETs.

[0207] 30, when the first input terminal IN1 is at H potential, the second input terminal IN2 is at L potential, and an H signal is input to the control terminal IN3, the first terminal T1 and the second terminal T2 are not connected, and the third terminal T3 and the fourth terminal T4 are connected. When an L signal is input to the control terminal IN3, the third terminal T3 and the fourth terminal T4 are not connected, and the first terminal T1 and the second terminal T2 are connected.

[0208] In addition, when the first input terminal IN1 and the second input terminal IN2 are each set to an L potential, regardless of the voltage of the signal input to the control terminal IN3, there is no conduction between the first terminal T1 and the second terminal T2, and between the third terminal T3 and the fourth terminal T4. [Industrial Applicability]

[0209] INDUSTRIAL APPLICABILITY The semiconductor relay module of the present disclosure is useful since it can form a c-contact relay with a simple configuration. [Explanation of symbols]

[0210] 1 Control circuit 2. First MOSFET 3 C-contact relay 4, 5 Load 10 First semiconductor relay 11 First LED (first light emitting element) 12 First photodiode array (first light receiving element) 13 1st charge / discharge circuit 14 Second MOSFET 15 3rd MOSFET 20 Second semiconductor relay 21 Second LED (second light emitting element) 22 Second photodiode array (second light receiving element) 23 2nd charge / discharge circuit 24 4th MOSFET 25 5th MOSFET 30 Third semiconductor relay 31 Third LED (third light emitting element) 32 Third photodiode array (third light receiving element) 33 Third charge / discharge circuit 34 6th MOSFET 35 7th MOSFET 40 4th semiconductor relay 41 4th LED (4th light emitting element) 42 Fourth photodiode array (fourth light receiving element) 43 4th charge / discharge circuit 44 8th MOSFET 45 9th MOSFET 50 5th Solid State Relay 51 5th LED (5th light emitting element) 52 fifth photodiode array (fifth light receiving element) 53 5th charge / discharge circuit 54 10th MOSFET 55 11th MOSFET 60 6th Semiconductor Relay 61 6th LED (6th light-emitting element) 62 6th photodiode array (6th light receiving element) 63 6th charge / discharge circuit 64 12th MOSFET 65 13th MOSFET 71 Resistance element (first resistor) 72 Resistance element (first resistor) 73 Resistance element (second resistor) 74 Resistance element (first resistor) 75 Resistance element (third resistor) 76 Resistance element (fourth resistor) 81~84 1st~4th light receiving IC 91~93 1st~3rd semiconductor packages 100~112 Semiconductor relay module 120, 130, 140 Semiconductor chips 210 Input side lead frame 211 First Input Lead 211a Part 1 211a1 Depression 211a2 Through hole 211a3 Notch 211b Part 2 212 Second Input Lead 213 3rd Input Lead 214 First LED placement section 215 Second LED placement section 216 First MOSFET mounting portion 220 Output side lead frame 221 First Output Lead 222 2nd Output Lead 223 3rd output lead 224 First light receiving IC placement section 225 Second light receiving IC placement section 226 Second MOSFET mounting portion 227 Third MOSFET mounting section 228 5th MOSFET mounting part 230 Metal Wire 240 Housing 250 Light-shielding resin 260 Translucent resin 261~264 1st~4th transparent resin 270 Wiring Board 280 Conductive adhesive IN1 First input terminal IN2 Second input terminal IN3 control terminal T1~T12 Terminals 1~12 T23, T27, T36 common terminal (COM terminal)

Claims

1. a first input terminal to which a first voltage is applied; a second input terminal to which a second voltage lower than the first voltage is applied; a control terminal to which a control signal is input; A first terminal; A second terminal; A third terminal; A fourth terminal; a first semiconductor relay connected to the first terminal and the second terminal; a second semiconductor relay connected to the third terminal and the fourth terminal; a control circuit connected to the first input terminal, the second input terminal, the control terminal, the first semiconductor relay, and the second semiconductor relay, the control circuit having a first MOSFET; Equipped with The first MOSFET is switched on and off in response to the control signal, When the first MOSFET is on, the first input terminal and the second input terminal are electrically connected to each other; the first semiconductor relay electrically connects the first terminal and the second terminal to each other; When the first MOSFET is off, the first input terminal and the control terminal are electrically connected to each other; the second semiconductor relay electrically connects the third terminal and the fourth terminal to each other; Solid state relay module.

2. The first semiconductor relay is A first light-emitting element; a first light receiving element that receives a first output light from the first light emitting element; a first charge / discharge circuit connected to the first light receiving element; a second MOSFET connected to the first charge / discharge circuit and the first terminal; a third MOSFET connected to the first charge / discharge circuit and the second terminal; having The second semiconductor relay is A second light-emitting element; a second light receiving element that receives the second output light from the second light emitting element; a second charge / discharge circuit connected to the second light receiving element; a fourth MOSFET connected to the second charge / discharge circuit and the third terminal; a fifth MOSFET connected to the second charge / discharge circuit and the fourth terminal; having When the first light receiving element receives the first output light from the first light emitting element, the second MOSFET and the third MOSFET are turned on, and the first terminal and the second terminal are electrically connected to each other; When the second light receiving element receives the second output light from the second light emitting element, the fourth MOSFET and the fifth MOSFET are turned on, and the third terminal and the fourth terminal are electrically connected to each other.

2. The semiconductor relay module according to claim 1.

3. The second input terminal is grounded.

3. The semiconductor relay module according to claim 2.

4. the control circuit further includes a first resistor having one end connected to the first input terminal; The other end of the first resistor is connected to the first semiconductor relay.

4. The semiconductor relay module according to claim 2 or 3.

5. the control circuit further includes a second resistor having one end connected to the first input terminal; The other end of the second resistor is connected to the second semiconductor relay. The semiconductor relay module according to any one of claims 2 to 4.

6. the control circuit further includes a third resistor having one end connected to the other end of the first resistor; The other end of the third resistor is connected to the first semiconductor relay.

5. The semiconductor relay module according to claim 4.

7. the control circuit further includes a fourth resistor having one end connected to the other end of the first resistor; The other end of the fourth resistor is connected to the second semiconductor relay.

7. The semiconductor relay module according to claim 4 or 6.

8. The second terminal and the third terminal are common to each other. The semiconductor relay module according to any one of claims 2 to 7.

9. A fifth terminal; A sixth terminal; A seventh terminal; An eighth terminal; a third semiconductor relay connected to the fifth terminal and the sixth terminal; a fourth semiconductor relay connected to the seventh terminal and the eighth terminal; Further comprising: The first MOSFET is switched on and off in response to the control signal, When the first MOSFET is on, the third semiconductor relay electrically connects the fifth terminal and the sixth terminal to each other; When the first MOSFET is off, the fourth semiconductor relay electrically connects the seventh terminal and the eighth terminal to each other; The semiconductor relay module according to any one of claims 2 to 8.

10. The third semiconductor relay is A third light-emitting element; a third light receiving element that receives a third output light from the third light emitting element; a third charge / discharge circuit connected to the third light receiving element; a sixth MOSFET connected to the third charge / discharge circuit and the fifth terminal; a seventh MOSFET connected to the third charge / discharge circuit and the sixth terminal; having The fourth semiconductor relay is A fourth light-emitting element; a fourth light receiving element that receives a fourth output light from the fourth light emitting element; a fourth charge / discharge circuit connected to the fourth light receiving element; an eighth MOSFET connected to the fourth charge / discharge circuit and the seventh terminal; a ninth MOSFET connected to the fourth charge / discharge circuit and the eighth terminal; having When the third light receiving element receives the third output light from the third light emitting element, the sixth MOSFET and the seventh MOSFET are turned on, and the fifth terminal and the sixth terminal are electrically connected to each other; When the fourth light receiving element receives the fourth output light from the fourth light emitting element, the eighth MOSFET and the ninth MOSFET are turned on, and the seventh terminal and the eighth terminal are electrically connected to each other.

10. The semiconductor relay module according to claim 9.

11. The first light emitting element and the third light emitting element are common, The second light emitting element and the fourth light emitting element are common to each other. The semiconductor relay module according to claim 10.

12. a first substrate on which the first light emitting element, the second light emitting element, and the first MOSFET are disposed; a second substrate facing the first substrate, on which the first light receiving element, the second light receiving element, the second MOSFET, the third MOSFET, the fourth MOSFET, and the fifth MOSFET are disposed; Further comprising: The first light emitting element and the first light receiving element face each other, The second light emitting element and the second light receiving element face each other. The semiconductor relay module according to any one of claims 2 to 8.

13. a first substrate on which the first light emitting element, the second light emitting element, the third light emitting element, the fourth light emitting element, and the first MOSFET are disposed; a second substrate facing the first substrate, on which the first light receiving element, the second light receiving element, the third light receiving element, the fourth light receiving element, the second MOSFET, the third MOSFET, the fourth MOSFET, the fifth MOSFET, the sixth MOSFET, the seventh MOSFET, the eighth MOSFET, and the ninth MOSFET are arranged; Further comprising: The first light emitting element and the first light receiving element face each other, The second light emitting element and the second light receiving element face each other, The third light emitting element and the third light receiving element face each other, The fourth light emitting element and the fourth light receiving element face each other.

12. The semiconductor relay module according to claim 10 or 11.

14. the second terminal and the seventh terminal are common to each other, The third terminal and the sixth terminal are common to each other. The semiconductor relay module according to any one of claims 9 to 11.

15. A semiconductor relay module according to any one of claims 2 to 14, a housing enclosing the semiconductor relay module; Equipped with The housing includes: a first light-transmitting resin provided between the first light-emitting element and the first light-receiving element, the first light-transmitting resin covering a light-emitting surface of the first light-emitting element and a light-receiving surface of the first light-receiving element; a second light-transmitting resin provided between the second light-emitting element and the second light-receiving element, the second light-transmitting resin covering a light-emitting surface of the second light-emitting element and a light-receiving surface of the second light-receiving element; a light-shielding resin provided between the first light-transmitting resin and the second light-transmitting resin and separating the first light-transmitting resin from the second light-transmitting resin; having Semiconductor chip.

16. The first MOSFET is disposed between the first light emitting element and the second light emitting element. The semiconductor chip of claim 15.

17. the control circuit further includes a first resistor having one end connected to the first input terminal; the other end of the first resistor is connected to the first semiconductor relay; a first substrate on which at least the first light emitting element, the second light emitting element, and the first MOSFET are arranged has a connection portion that electrically connects the first input terminal and the first resistor; The connection portion has at least one of a recess, a through hole, and a notch.

17. The semiconductor chip according to claim 15 or 16.

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