Light-emitting device, display device, photoelectric conversion device, electronic apparatus, illumination device and mobile object

Abstract

To provide a reflective layer that achieves both of a reflection function and a wiring function.SOLUTION: A light-emitting device comprises: a substrate; an interlayer insulation layer that is positioned on the substrate, and in which a conductive member is embedded; a lamination structure that is positioned on the interlayer insulation layer, and is configured by a plurality of metal layers which are laminated on each other; and a light-emitting element that is positioned on the lamination structure. The plurality of metal layers comprise: a first metal layer that includes a part which contacts with the conductive member; and a second metal layer that is positioned on the first metal layer. The second metal layer has a reflection surface that reflects light from the light-emitting element toward the light-emitting element. Resistivity of a material of the first metal layer is higher than resistivity of a material of the second metal layer. A reflectance ratio of the material of the second metal layer is higher than a reflectance ratio of the material of the first metal layer.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a light-emitting device, a display device, a photoelectric conversion device, an electronic device, a lighting device, and a moving body.

Background Art

[0002] A head-mounted display and a thin display using an organic EL element having features such as thinning, weight reduction, and low power consumption have been put into practical use. In Patent Document 1, an optical resonance structure in which a reflection portion is disposed under an organic EL element has been proposed. The distance between the lower electrode of the organic EL element and the reflection portion varies depending on the color emitted by the pixel, and light emission with enhanced luminance can be obtained at the resonance wavelength for each color. In Patent Document 2, a structure for reducing the terminal resistance of the anode electrode when forming an optical resonance structure for each pixel has been proposed.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] The reflection portion used to provide the optical resonance structure can also function as part of the wiring. The required characteristics may differ between the reflection function and the wiring function. Some aspects of the present invention aim to provide a reflective layer that achieves both the reflection function and the wiring function.

Means for Solving the Problems

[0005] According to an embodiment, a light-emitting device includes a substrate, an interlayer insulating layer located on the substrate and having a conductive member embedded therein, a stacked structure located on the interlayer insulating layer and composed of a plurality of metal layers stacked on one another, and a light-emitting element located on the stacked structure. The plurality of metal layers include a first metal layer including a portion in contact with the conductive member, and a second metal layer located on the first metal layer. The second metal layer has a reflective surface that reflects light from the light-emitting element toward the light-emitting element. The resistivity of the material of the first metal layer is higher than the resistivity of the material of the second metal layer, and the reflectivity of the material of the second metal layer is higher than the reflectivity of the material of the first metal layer. A light-emitting device is provided.

Advantages of the Invention

[0006] According to the above embodiment, a reflective layer that achieves both a reflective function and a wiring function is provided.

Brief Description of the Drawings

[0007]

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Embodiments for Carrying Out the Invention

[0008] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the invention according to the claims. Although a plurality of features are described in the embodiments, not all of these plurality of features are essential to the invention, and the plurality of features may be arbitrarily combined. Further, in the accompanying drawings, the same or similar configurations are denoted by the same reference numerals, and redundant descriptions are omitted.

[0009] <First Embodiment> With reference to FIG. 1, the cross-sectional structure of the light-emitting device 100 according to the first embodiment will be described. In FIG. 1, the light-emitting device 100 is arranged in the upward direction of the drawing to emit light. In the following description, the positional relationship (particularly, the vertical relationship) between the components in this arrangement will be described.

[0010] In FIG. 1, attention is paid to a portion of the light-emitting device 100 that includes three pixels 101r, 101g, and 101b. The light-emitting device 100 may include three or more pixels. The pixel 101r is a pixel for emitting red light. The pixel 101g is a pixel for emitting green light. The pixel 101b is a pixel for emitting blue light. The light-emitting device 100 having such pixels can display a color image. However, the technology described in this specification is also applicable to a light-emitting device 100 that emits monochromatic light. The pixels 101r, 101g, and 101b may be collectively referred to as the pixel 101. The description regarding the pixel 101 may be applied to any of the pixels 101r, 101g, and 101b.

[0011] The pixel 101 has a light-emitting element 120. The light-emitting element 120 may emit light with a luminance corresponding to the value of the current flowing through the light-emitting element. In the following example, the case where the light-emitting element 120 is an organic light-emitting element will be described. However, the technology described in this specification is also applicable to other types of light-emitting elements, such as light-emitting diodes and light-emitting transistors.

[0012] One or more circuit elements (for example, transistors) are formed on the semiconductor substrate 102. For example, a plurality of impurity regions 103 are formed on the semiconductor substrate 102. A gate electrode 104 is disposed on the surface of the semiconductor substrate 102 via a gate insulating film. A MOS (metal-oxide-semiconductor) transistor is constituted by the gate electrode 104 and two impurity regions 103. One of the two impurity regions 103 constituting the MOS transistor functions as a source, and the other functions as a drain. The MOS transistor may be used to drive the light-emitting element 120 included in the pixel 101. An element isolation region (for example, STI (Shallow Trench Isolation)) may be formed on the semiconductor substrate 102.

[0013] An interlayer insulating layer 105 is disposed on the semiconductor substrate 102. The interlayer insulating layer 105 (specifically, its lower surface) is in contact with the semiconductor substrate 102 (specifically, its upper surface). One or more wiring layers 106 and a plurality of contact plugs 107 are embedded in the interlayer insulating layer 105. The one or more wiring layers 106 and the plurality of contact plugs 107 are conductive members for transmitting electrical signals or power supply voltages.

[0014] The plurality of contact plugs 107 may include contact plugs that connect a circuit element (e.g., the impurity region 103 or the gate electrode 104) formed in the semiconductor substrate 102 and the wiring layer 106. The plurality of contact plugs 107 may include contact plugs that connect wiring layers 106 of different layers. The plurality of contact plugs 107 may include contact plugs that connect the wiring layer 106 and the reflective layer 108. The contact plug 107 may be formed of a tungsten film containing a barrier metal such as Ti / TiN.

[0015] The interlayer insulating layer 105 may be a BPSG (Boro-Phospho. Silicate Glass) film formed by a thermal CVD (Chemical Vapor Deposition) method or a silicon oxide film formed by a plasma CVD method. The wiring layer 106 may include aluminum wiring or may include copper wiring. In the example of FIG. 1, the light-emitting device 100 has two wiring layers 106. Alternatively, the light-emitting device 100 may have only one wiring layer 106 or three or more wiring layers 106. In the plurality of wiring layers 106, aluminum wiring and copper wiring may be mixed.

[0016] A reflective layer 108 is disposed on the interlayer insulating layer 105. The reflective layer 108 (specifically, its lower surface) is in contact with the interlayer insulating layer 105 (specifically, its upper surface) and the contact plug 107 (specifically, its upper surface). In this way, the reflective layer 108 includes a portion in contact with the contact plug 107. Instead of this, when a wiring layer 106 is formed on the upper part of the interlayer insulating layer 105, the reflective layer 108 may include a portion in contact with the wiring layer 106. The reflective layer 108 is electrically connected to a circuit element (for example, a transistor) formed on the semiconductor substrate 102 through the wiring layer 106 and the contact plug 107.

[0017] The reflective layer 108 is separated for each pixel 101. Specifically, the reflective layer 108 includes a portion included in the pixel 101r, a portion included in the pixel 101g, and a portion included in the pixel 101b, and these portions are separated from each other.

[0018] The reflective layer 108 may have a thickness (for example, 200 nm or more and 2000 nm or less, specifically about 300 nm) that can be used as a pad of the light-emitting device 100. When the reflective layer 108 can be used as a pad of the light-emitting device 100, there is no need to form another wiring layer for the pad, so the cost of the light-emitting device 100 can be reduced.

[0019] The reflective layer 108 has a stacked structure composed of a plurality of metal layers stacked on each other. In the example of FIG. 1, the reflective layer 108 has a stacked structure composed of two metal layers stacked on each other, that is, a metal layer 108a and a metal layer 108b. The metal layer 108a and the metal layer 108b are in contact with each other. The metal layer 108b is located above the metal layer a.

[0020] The metal layer 108a is the lowermost layer of the plurality of metal layers. The metal layer 108a includes a portion in contact with the interlayer insulating layer 105 and a portion in contact with the contact plug 107. The metal layer 108b is the uppermost layer of the plurality of metal layers. The upper surface of the metal layer 108b is in contact with the lower surface of the optical adjustment layer 109. The reflective layer 108 reflects the light emitted from the light-emitting element 120 back toward the light-emitting element 120. Specifically, the metal layer 108b included in the reflective layer 108 has a reflective surface that reflects the light from the light-emitting element 120 back toward the light-emitting element 120. Both the direct light emitted from the light-emitting element 120 toward the outside of the light-emitting device 100 (above in FIG. 1) and the reflected light reflected by the reflective layer 108 are emitted from the pixel 101.

[0021] As described above, the upper surface of the reflective layer 108 reflects the light from the light-emitting element 120, and the lower surface of the reflective layer 108 is in contact with a conductive member (for example, the contact plug 107) embedded in the interlayer insulating layer 105. Therefore, the required characteristics are different between the upper surface and the lower surface of the reflective layer 108. Thus, the metal layers 108a and 108b may be formed of materials according to these characteristics. For example, the resistivity of the material of the metal layer 108a may be higher than the resistivity of the material of the metal layer 108b. Thereby, the contact resistance between the reflective layer 108 and the contact plug 107 can be reduced. The reflectivity of the material of the metal layer 108b may be higher than the reflectivity of the material of the metal layer 108a. Thereby, the light emission efficiency of the optical resonance structure formed by the reflective layer 108 can be improved. Specifically, the metal layer 108a may be formed of at least one of titanium, titanium nitride, and a titanium alloy. The metal layer 108b may be formed of at least one of aluminum, an aluminum alloy, copper, a copper alloy, silver, and a silver alloy. The metal layer 108a may be thinner than the metal layer 108b. The thickness of the metal layer 108b may be 10 nm or more and 100 nm or less. In the light-emitting device 100, in the reflective layer 108, the portion in contact with the conductive member (for example, the contact plug 107) embedded in the interlayer insulating layer 105 is electrically connected to the reflective surface of the reflective layer 108.

[0022] Since the metal layer 108a is in contact with the lower surface of the metal layer 108b, the crystal orientation of the metal layer 108b is affected by the crystal orientation of the metal layer 108a. The influence on the orientation of the metal layer 108b can affect the electromigration and reliability of the wiring provided by the reflective layer 108. By forming the metal layer 108a, for example, as a laminate of titanium nitride and a titanium film, the influence on the crystal orientation of the metal layer 108b can be reduced. Further, the crystal orientation of the metal layer 108b may be controlled by adjusting the thickness and film formation temperature of the metal layer 108a. The film formation temperature of the metal layer 108a may be, for example, about 250°C.

[0023] An optical adjustment layer 109 is disposed on the reflective layer 108. The optical adjustment layer 109 (specifically, its lower surface) is in contact with the reflective layer 108 (specifically, its upper surface). Further, the optical adjustment layer 109 (specifically, its lower surface) also includes a portion in contact with the interlayer insulating layer 105. The optical adjustment layer 109 covers the upper surface of the reflective layer 108. The optical adjustment layer 109 may be formed of a material with high light transmittance such as SiO, SiN, ITO, IZO, etc. Therefore, the optical adjustment layer 109 may be referred to as a light-transmitting layer. The optical adjustment layer 109 may be formed by combining a plurality of materials (for example, SiO and ITO) in some of the pixels 101 (for example, the pixel 101r). Also, the configuration of the optical adjustment layer 109 may be different for each pixel 101. When ITO is combined with the material of the optical adjustment layer 109, the contact resistance between the lower electrode 110 and the reflective layer 108 can be reduced by lowering the resistance of the lower electrode 110.

[0024] The thickness of the optical adjustment layer 109 may be different for each pixel 101. For example, the thickness of the optical adjustment layer 109 may be a value corresponding to the resonance wavelength of each pixel 101. Let the thickness of the portion of the optical adjustment layer 109 included in the pixel 101r be Tr, the thickness of the portion included in the pixel 101g be Tg, and the thickness of the portion included in the pixel 101b be Tb. When the thicknesses Tr, Tg, and Tb of the optical adjustment layer 109 have values corresponding to the resonance wavelengths of red light, green light, and blue light, respectively, Tr>Tg>Tb may be satisfied.

[0025] The lower electrode 110 is disposed on the optical adjustment layer 109. A part of the lower electrode 110 (specifically, its lower surface) is in contact with the optical adjustment layer 109 (specifically, its upper surface). The light-emitting device 100 has an individual lower electrode 110 for each pixel 101. That is, the lower electrode 110 of one pixel 101 (for example, pixel 101r) and the lower electrode 110 of another pixel 101 (for example, pixel 101b) are separated from each other.

[0026] A part of the lower electrode 110 penetrates the optical adjustment layer 109 and is in contact with the reflective layer 108. Specifically, in the example of FIG. 1, a part of the lower electrode 110 further penetrates the metal layer 108b and is in contact with the metal layer 108a (specifically, its upper surface). As a result, the distance between the portion of the lower electrode 110 closest to the semiconductor substrate 102 (that is, the portion in contact with the metal layer 108a) and the semiconductor substrate 102 is shorter than the distance between the semiconductor substrate 102 and the reflective surface (a part of the upper surface) of the reflective layer 108. By making the resistivity of the material of the metal layer 108a higher than the resistivity of the material of the metal layer 108b as described above, the contact resistance between the metal layer 108a and the lower electrode 110 can be reduced. The lower electrode 110 can be formed of a highly transmissive material such as ITO or IZO. In the example of FIG. 1, a part of the lower electrode 110 is also in contact with the metal layer 108b. Alternatively, the lower electrode 110 may not be in contact with the metal layer 108b.

[0027] The separation member 111 is disposed on the lower electrode 110. A part of the separation member 111 (specifically, its lower surface) is in contact with the lower electrode 110 (specifically, its upper surface). The separation member 111 covers a part of the lower electrode 110 and does not cover a part of the lower electrode 110. The portion of the lower electrode 110 covered by the separation member 111 includes the portion of the lower electrode 110 that penetrates the optical adjustment layer 109. In other words, the separation member 111 enters the recess of the lower electrode 110. The separation member 111 can be formed of, for example, SiO. The separation member 111 may be called a bank.

[0028] The organic layer 112 is disposed on the optical adjustment layer 109, the lower electrode 110, and the separation member 111. The organic layer 112 (specifically, its lower surface) is in contact with the optical adjustment layer 109 (specifically, a part of its upper surface), the lower electrode 110 (specifically, a part of its upper surface), and the separation member 111 (specifically, its upper surface). The organic layer 112 contains at least an organic light-emitting material. The organic layer 112 may further include a charge transport layer, a charge blocking layer, a carrier generation layer, and the like. The lower electrode 110 includes a contact portion in contact with the organic layer 112 and a non-contact portion separated from the organic layer 112 by the separation member 111. At least a part of the contact portion of the lower electrode 110 is surrounded by the non-contact portion of the lower electrode 110. This part of the contact portion serves as the light-emitting region of the light-emitting element 120. Therefore, the separation member 111 defines the light-emitting region of the light-emitting element 120.

[0029] The upper electrode 113 is disposed on the organic layer 112. Therefore, the upper electrode 113 is located above the lower electrode 110. The upper electrode 113 (specifically, its lower surface) is in contact with the organic layer 112 (specifically, its upper surface). The upper electrode 113 can be formed of a transparent material so as to be transmissive to the light emitted by the organic layer 112. For example, the upper electrode 113 may be a thin film of gold, platinum, silver, aluminum, chromium, magnesium, or an alloy thereof.

[0030] A light-emitting element 120 is formed by a part of the lower electrode 110, a part of the organic layer 112, and a part of the upper electrode 113. Specifically, the light-emitting element 120 is formed by a portion of the lower electrode 110 surrounded by the separation member 111, a portion of the organic layer 112 overlapping this surrounded portion, and a portion of the upper electrode 113 overlapping this surrounded portion. The light-emitting element 120 is located on the optical adjustment layer 109. The lower electrode 110 can function as the anode of the light-emitting element 120. Therefore, the lower electrode 110 may be referred to as the anode electrode. The upper electrode 113 can function as the cathode of the light-emitting element 120. Therefore, the upper electrode 113 may be referred to as the cathode electrode. The lower electrode 110 is in contact with the reflective layer 108 at a position that does not overlap the light-emitting element 120 in a plan view with respect to the surface of the semiconductor substrate 102. The portion of the lower electrode 110 surrounded by the separation member 111 may be flat.

[0031] A sealing film 114 is disposed on the upper electrode 113. The sealing film 114 (specifically, its lower surface) is in contact with the upper electrode 113 (specifically, its upper surface). The upper surface of the sealing film 114 is flatter than its lower surface. The sealing film 114 may have a function of preventing moisture from entering the semiconductor substrate 102, the organic layer 112, and the upper electrode 113. The sealing film 114 may be, for example, a composite film such as a silicon nitride film or an Al 2 O 3 film formed by plasma chemical vapor deposition (CVD) method or atomic layer deposition (ALD) method. The thickness of the sealing film 114 may be 2 μm or more.

[0032] Color filters 115r, 115g, and 115b are disposed on the sealing film 114. The color filters 115r, 115g, and 115b (specifically, their lower surfaces) are in contact with the sealing film 114 (specifically, its upper surface). The color filter 115r is included in the pixel 101r and selectively transmits red light. The color filter 115g is included in the pixel 101g and selectively transmits green light. The color filter 115b is included in the pixel 101b and selectively transmits blue light.

[0033] Micro-lenses 116 are disposed on color filters 115r, 115g, and 115b. The micro-lenses 116 (specifically, their lower surfaces) are in contact with the color filters 115r, 115g, and 115b (specifically, their upper surfaces). The micro-lenses 116 may have a uniform shape over the entire light-emitting region of the light-emitting element 120, or may have partially different curvatures.

[0034] Subsequently, with reference to FIG. 2, the shape of the reflective layer 108 in plan view with respect to the surface of the semiconductor substrate 102 will be described. In FIG. 2, only the reflective layer 108 is focused on. The cross-sectional view taken along line A-B in FIG. 2 may correspond to FIG. 1. The reflective layer 108 is separated into a plurality of portions 108c. One portion 108c is included in one pixel 101. In FIG. 2, only two of the plurality of portions 108c are labeled. In the example of FIG. 2, the portion 108c has a hexagonal shape. Alternatively, the portion 108c may have other shapes, for example, other polygonal shapes. The plurality of portions 108c may have the same size or different sizes. The plurality of portions 108c may have the same shape or different shapes. For example, the plurality of portions 108c may have different sizes and shapes for each emission color.

[0035] The portion 108c includes a region 108d in contact with the lower electrode 110. An opening is formed in the metal layer 108b in the region 108d, and a part of the lower electrode 110 passes through this opening. In the example of FIG. 2, one portion 108c has only one region 108d. Alternatively, one portion 108c may have a plurality of regions 108d, and a part of the lower electrode 110 may be in contact with the reflective layer 108 in each of the plurality of regions 108d. The area and density of one or more regions 108d in one portion 108c can be set as appropriate.

[0036] Next, with reference to FIGS. 3 to 4, a method for manufacturing the light-emitting device 100 will be described. First, a wiring layer 106, a contact plug 107, and an interlayer insulating layer 105 are formed on a semiconductor substrate 102 on which circuit elements are formed. Since these components may be formed using existing technologies, detailed descriptions thereof are omitted.

[0037] Thereafter, a metal layer 108a is formed on the interlayer insulating layer 105 by sputtering. The material of the metal layer 108a may be the material described above, for example, Ti / TiN. Thereafter, a metal layer 108b is formed on the metal layer 108a by sputtering. The material of the metal layer 108b may be the material described above, for example, AlCu. The reflective layer 108 is constituted by a stacked structure of the metal layer 108a and the metal layer 108b. Thereafter, by performing a photolithography process and a dry etching process on the reflective layer 108, the reflective layer 108 is divided into a plurality of portions 108c in FIG. 2. Thereby, the structure of FIG. 3(a) is formed.

[0038] Thereafter, an interference film 301 is formed on the reflective layer 108 by plasma CVD. Thereby, the structure of FIG. 3(b) is formed. In the description of the processes after FIG. 3(b), the semiconductor substrate 102 and the lower side of the interlayer insulating layer 105 are omitted. The material of the interference film 301 may be, for example, SiO.

[0039] Thereafter, an opening 302 is formed in the interference film 301 so as to expose the upper surface of the portion 108c included in the pixel 101g in the reflective layer 108. Thereby, the structure of FIG. 3(c) is formed. In the pixel 101g, a light-emitting element 120 is formed at a position overlapping the exposed portion. The opening 302 may be formed by a photolithography process and a dry etching process. Since the etching selectivity can be increased due to the difference between the material of the interference film 301 (for example, SiO) and the material of the metal layer 108b (for example, AlCu), the amount of digging into the upper surface of the metal layer 108b can be reduced.

[0040] Thereafter, an interference film 303 is formed on the interference film 301 by plasma CVD method. As a result, the structure of FIG. 3(d) is formed. The material of the interference film 303 may be, for example, SiO. A part of the interference film 303 enters the opening 302.

[0041] Thereafter, an opening 401 is formed in the interference films 301 and 303 so as to expose the upper surface of the portion 108c included in the pixel 101b in the reflective layer 108. As a result, the structure of FIG. 4(a) is formed. In the pixel 101r, a light-emitting element 120 is formed at a position overlapping the exposed portion. The opening 401 may be formed by a photolithography process and a dry etching process. Since the etching selectivity can be increased due to the difference between the materials of the interference films 301 and 303 (for example, SiO) and the material of the metal layer 108b (for example, AlCu), the amount of digging into the upper surface of the metal layer 108b can be small.

[0042] Thereafter, an interference film 402 is formed on the interference film 303 by plasma CVD method. As a result, the structure of FIG. 4(b) is formed. The material of the interference film 402 may be, for example, SiO. A part of the interference film 402 enters the opening 401. The interference films 301, 303, and 402 form an optical adjustment layer 109.

[0043] Thereafter, a contact hole 403 is formed so as to penetrate the optical adjustment layer 109 and the metal layer 108b to expose a part of the upper surface of the metal layer 108a. As a result, the structure of FIG. 4(c) is formed. The contact hole 403 may be formed by a photolithography process and a dry etching process.

[0044] Thereafter, a conductive film (e.g., ITO film) is formed on the optical adjustment layer 109 by, for example, sputtering. A part of the conductive film enters the contact hole 403 and contacts the metal layer 108a. The lower electrode 110 is formed by removing unnecessary portions of this conductive film through a photolithography process and a dry etching process. Thereafter, an insulating film (e.g., SiO film) is formed on the lower electrode 110 by plasma CVD, and the separation member 111 is formed by removing unnecessary portions of this conductive film through a photolithography process and a dry etching process. Thereby, the structure of FIG. 4(d) is formed.

[0045] Thereafter, the light-emitting device 100 is manufactured by sequentially forming the organic layer 112, the upper electrode 113, the sealing film 114, the color filters 115r, 115g, 115b, and the microlenses 116. Since these components may be formed using existing technologies, detailed descriptions thereof are omitted.

[0046] When etching another metal layer using the metal layer 108b as a base, the selectivity of etching cannot be increased, so the amount by which the upper surface of the metal layer 108b is dug in increases. Due to this digging, a step may occur on the upper surface of the metal layer 108b. When the organic layer 112 is formed on this step, a part of the organic layer 112 is thinned by the step, so that the electric field between the upper electrode 113 and the lower electrode 110 becomes stronger and a leakage current may occur. However, according to the above-described manufacturing method, etching of another metal layer using the metal layer 108b as a base is not performed. Therefore, steps are less likely to occur in the portion of the reflective layer 108 that functions as a reflective surface. Thereby, the occurrence of the above-described leakage current is reduced. Further, as shown in FIG. 4(c), when the contact hole 403 is formed, the portion of the optical adjustment layer 109 that overlaps the light-emitting element 120 is covered with a resist, so that the thickness of the optical adjustment layer 109 is also maintained. Thereby, the controllability of the optical adjustment layer 109 in the optical resonance structure is improved.

[0047] <Second Embodiment> Referring to FIG. 5, the cross-sectional structure of the light-emitting device 500 according to the second embodiment will be described. The points different from the light-emitting device 100 in the light-emitting device 500 will be mainly described, and the overlapping descriptions of the points that may be the same as those of the light-emitting device 100 will be omitted.

[0048] The reflective layer 108 has a laminated structure composed of a plurality of metal layers laminated on each other. In the example of FIG. 5, the reflective layer 108 has a laminated structure composed of four metal layers laminated on each other, that is, the metal layer 108c, the metal layer 108d, the metal layer 108e, and the metal layer 108f. The metal layer 108c and the metal layer 108d are in contact with each other. The metal layer 108d is located above the metal layer 108c. The metal layer 108d and the metal layer 108e are in contact with each other. The metal layer 108e is located above the metal layer 108d. The metal layer 108e and the metal layer 108f are in contact with each other. The metal layer 108f is located above the metal layer 108e. In other words, the metal layer 108e is located below the metal layer 108f.

[0049] The metal layer 108c is the lowermost layer of the plurality of metal layers. The metal layer 108c includes a portion in contact with the interlayer insulating layer 105 and a portion in contact with the contact plug 107. The metal layer 108f is the uppermost layer of the plurality of metal layers. The upper surface of the metal layer 108f is in contact with the lower surface of the optical adjustment layer 109. The metal layer 108f included in the reflective layer 108 has a reflective surface that reflects the light from the light-emitting element 120 toward the light-emitting element 120.

[0050] The resistivity of each material of the metal layer 108c and the metal layer 108e may be higher than the resistivity of any material of the metal layer 108d and the metal layer 108f. Thereby, the contact resistance between the reflective layer 108 and the contact plug 107 can be reduced. The reflectivity of each material of the metal layer 108d and the metal layer 108f may be higher than the reflectivity of any material of the metal layer 108c and the metal layer 108e. Thereby, the luminous efficiency of the optical resonance structure formed by the reflective layer 108 can be improved. Each of the metal layer 108c and the metal layer 108e may be formed of at least one of titanium, titanium nitride, and a titanium alloy. The metal layer 108e may be the same material as the metal layer 108c or a different material. Each of the metal layer 108d and the metal layer 108f may be formed of at least one of aluminum, an aluminum alloy, copper, a copper alloy, silver, and a silver alloy. The metal layer 108d may be the same material as the metal layer 108f or a different material. For example, the metal layer 108f may be a silver alloy and the metal layer 108d may be an aluminum alloy.

[0051] The metal layer 108f may be thinner than the metal layer 108d. For example, the thickness of the metal layer 108f may be about 100 nm. The thickness of the metal layer 108d may be about 200 nm. By making the metal layer 108f thinner than the metal layer 108d, the growth of grains on the metal surface can be suppressed and the reflectivity of the reflective layer 108 can be improved.

[0052] The metal layer 108d may be arranged to reduce the resistance value of the entire reflective layer 108. Therefore, the metal layer 108d may be thicker than either of the metal layer 108c and the metal layer 108e. For example, when the reflective layer 108 also serves as a pad electrode, the wiring resistance can be reduced.

[0053] In the light-emitting device 500, a part of the lower electrode 110 penetrates the metal layer 108f and contacts the upper surface of the metal layer 108e. Therefore, compared with the light-emitting device 100, the distance between the lower end and the upper end of the lower electrode 110 can be reduced, and thus the resistance between the light-emitting element 120 and the reflective layer 108 can be reduced.

[0054] The light-emitting device 500 may be manufactured by laminating four metal layers on the interlayer insulating layer 105 and dividing them into a plurality of portions 108c in the process of FIG. 3(a).

[0055] <Third Embodiment> Referring to FIG. 6, the cross-sectional structure of the light-emitting device 600 according to the third embodiment will be described. The points different from the light-emitting device 100 in the light-emitting device 600 will be mainly described, and the overlapping descriptions of the points that may be the same as those of the light-emitting device 100 will be omitted. This difference may also be applied to the second embodiment.

[0056] The lower electrode 110 has a plurality of steps between the portion in contact with the organic layer 112 and the portion in contact with the reflective layer 108 (that is, the portion 601). As a result, the inclination of the portion 601 of the lower electrode 110 becomes gentle, so that the thinning of the portion 601 can be suppressed, and the increase in resistance and the step break of the portion 601 can be suppressed.

[0057] One step of the portion 601 of the lower electrode 110 can be formed by forming an opening not only in the interference film 301 but also in the portion where the contact hole 403 of the pixel 101r is to be formed at the time of the process of FIG. 3(c). Another step of the portion 601 of the lower electrode 110 can be formed by forming an opening not only in the interference films 301 and 303 but also in the portion where the contact hole 403 of the pixel 101r is to be formed at the time of the process of FIG. 4(a).

[0058] <Fourth Embodiment> Referring to FIG. 7, the cross-sectional structure of the light-emitting device 700 according to the fourth embodiment will be described. The points different from the light-emitting device 100 in the light-emitting device 700 will be mainly described, and the overlapping descriptions of the points that may be the same as those of the light-emitting device 100 will be omitted. This difference may also be applied to the second embodiment or the third embodiment.

[0059] The lower electrode 110 of the light-emitting device 700 is in contact with the upper surface of the metal layer 108b without penetrating the metal layer 108b. As a result, the distance between the portion of the lower electrode 110 closest to the semiconductor substrate 102 (i.e., the portion in contact with the metal layer 108b) and the semiconductor substrate 102 is the same as the distance between the semiconductor substrate 102 and the reflective surface (a part of the upper surface) of the reflective layer 108. Thereby, as compared with the light-emitting device 100, the distance between the lower end and the upper end of the lower electrode 110 can be reduced, and thus the resistance between the light-emitting element 120 and the reflective layer 108 can be reduced.

[0060] In the light-emitting device 700, the material of the metal layer 108b may be selected so that the work function difference between the metal layer 108b and the lower electrode 110 becomes small. Thereby, an increase in contact resistance can be suppressed and the resistance can be stabilized.

[0061] The light-emitting device 700 may be manufactured by forming a contact hole 403 that penetrates the optical adjustment layer 109 so as to expose a part of the upper surface of the metal layer 108b in the process of FIG. 4(c).

[0062] <Fifth Embodiment> With reference to FIGS. 8 and 9, the light-emitting device 800 according to the fifth embodiment will be described. FIG. 8 illustrates a cross-sectional structure of the light-emitting device 800. FIG. 9 illustrates the shape of the reflective layer 108 of the light-emitting device 800 in a plan view with respect to the surface of the semiconductor substrate 102. In FIG. 9, only the reflective layer 108 is focused on. A cross-sectional view taken along line C-D in FIG. 9 may correspond to FIG. 8. The points of difference between the light-emitting device 800 and the light-emitting device 100 will be mainly described, and redundant descriptions of the points that may be the same as those of the light-emitting device 100 will be omitted. This difference may be applied to any of the second to fourth embodiments.

[0063] The reflective layer 108 is separated into one part 108e and a plurality of parts 108f. In FIG. 9, only two of the plurality of parts 108f are labeled. The part 108e is commonly disposed for the plurality of pixels 101. The part 108e (specifically, the upper surface of the metal layer 108b) includes a reflective surface in each pixel 101. One part 108f is included in one pixel 101. A part of the lower electrode 110 is in contact with the part 108f (specifically, the lower surface of the metal layer 108a). Also, a conductive member (for example, a contact plug 107) embedded in the interlayer insulating layer 105 is in contact with the part 108f (specifically, the lower surface of the metal layer 108a). Thus, in the light-emitting device 800, the part of the reflective layer 108 that is in contact with the conductive member (for example, the contact plug 107) embedded in the interlayer insulating layer 105 is electrically separated from the reflective surface of the reflective layer 108. Thereby, the potential of the part 108e of the reflective layer 108 can be floated. As a result, it is possible to suppress a decrease in the reliability of the organic layer 112 due to a strong electric field that may be generated between the reflective layers 108 of two adjacent pixels 101 of the light-emitting device 100.

[0064] In the light-emitting device 800, the part 108f of the reflective layer 108 does not include the metal layer 108b. Therefore, the lower electrode 110 does not contact the metal layer 108b. As a result, it is possible to suppress a strong electric field that may be generated between the reflective layers 108 of two adjacent pixels 101 of the light-emitting device 100. Also, it is possible to suppress the formation of a highly resistive metal oxide film even between the metal layer 108b and the lower electrode 110.

[0065] The light-emitting device 800 may be manufactured by etching the metal layer 108b so as to remove only the metal layer 108b from the part 108f of the reflective layer 108 and leave the metal layer 108b of the part 108e of the reflective layer 108 in the process of FIG. 4(a).

[0066] <Sixth Embodiment> Referring to FIG. 10, the cross-sectional structure of the light-emitting device 1000 according to the sixth embodiment will be described. The points different from the light-emitting device 700 according to the fourth embodiment in the light-emitting device 1000 will be mainly described, and the overlapping descriptions of the points that may be the same as those of the light-emitting device 700 will be omitted.

[0067] The light-emitting device 1000 does not include an optical adjustment layer 109 between the reflective layer 108 and the lower electrode 110. The lower electrode 110 contacts the entire upper surface of the reflective layer 108 (specifically, the upper surface of the metal layer 108b). In particular, the lower electrode 110 contacts the metal layer 108b on the opposite side of the portion in contact with the organic layer 112. Thereby, since the area of the contact portion can be reduced, the light-emitting device 1000 can widen the opening contributing to light emission as compared with the light-emitting device 700. Therefore, for example, when the light-emitting device 1000 is used as a display device, the viewing angle characteristics are improved. The metal layer 108a does not contact the lower electrode 110.

[0068] The lower electrode 110 is a conductive transparent electrode. The thickness of the lower electrode 110 may be different for each pixel 101. For example, the thickness of the lower electrode 110 may be a value corresponding to the resonance wavelength of each pixel 101. Specifically, the thickness of the portion of the lower electrode 110 included in the pixel 101r may be larger than the thickness of the portion of the lower electrode 110 included in the pixel 101g. The thickness of the portion of the lower electrode 110 included in the pixel 101g may be larger than the thickness of the portion of the lower electrode 110 included in the pixel 101b. Thereby, an optical resonance structure is formed in each pixel, and light emission with enhanced luminance at the resonance wavelength can be obtained.

[0069] An example of a specific structure for realizing the difference in the thickness of the lower electrode 110 as described above will be described. The portion of the lower electrode 110 included in the pixel 101r may be composed of three interference films 110a to 110c. The portion of the lower electrode 110 included in the pixel 101g may be composed of two interference films 110b and 110c. The portion of the lower electrode 110 included in the pixel 101b may be composed of one interference film 110c. Among the interference films 110a to 110c, the interference film 110a is closest to the semiconductor substrate, and the interference film 110c is farthest from the semiconductor substrate. The interference film 110b included in each of the pixels 101r and 101g may be generated by separating the same interference film in pixel units. The interference film 110c included in each of the pixels 101r, 101g, and 101b may be generated by separating the same interference film in pixel units. The pixel 101g may include the interference films 110a and 110c instead of the interference films 110b and 110c, or may include the interference films 110a and 110b. The pixel 101b may include the interference film 110a instead of the interference film 110c, or may include the interference film 110b.

[0070] Any of the interference films 110a to 110c may be a conductive transparent electrode film. The interference films 110a to 110c are formed of materials such as ITO and IZO, for example. Among the reflection layers 108, the portions included in two adjacent pixels 101 are separated from each other by the pixel separation film 1001. The pixel separation film 1001 is formed of an insulator such as SiO, SiN, or SiON. Also, as in the fourth embodiment, among the lower electrodes 110, the portions included in two adjacent pixels 101 are separated from each other by the separation member 111. The boundary between the pixel separation film 1001 and the reflection layer 108 is covered by the lower electrode 110.

[0071] It is not necessary for all of the interference films 110a to 110c to be conductive transparent electrode films, and a part of the interference films 110a to 110c may be a non-conductive insulating film. For example, if the interference film 110c is a conductive transparent electrode film and a part of the interference film 110c is in contact with the reflection layer 108, the interference films 110a and 110b may be non-conductive insulating films. The non-conductive insulating film is formed of a material such as SiO.

[0072] Since the metal layer 108b is in contact with the lower electrode 110, the material may be selected so that the difference in work function between the metal layer 108b and the lower electrode 110 is reduced. Thereby, an increase in contact resistance can be suppressed and the resistance can be stabilized. For example, the material of the metal layer 108b may be an alloy containing Ni in AL, an alloy containing Cu, an alloy containing Ag, or any combination thereof. Impurities may be mixed in these materials at a ratio of less than 1%.

[0073] Subsequently, a method for manufacturing the light-emitting device 1000 will be described. Up to the formation of the reflective layer 108, it is the same as the manufacturing method described in FIG. 3(a). Thereafter, an insulating film is formed so as to fill the gaps between the island-shaped reflective layers 108. The insulating film may be formed by a combination of different film-forming methods such as plasma CVD and high-density plasma CVD. In this way, a film type with good step coverage may be applied. Thereafter, the insulating film is planarized by, for example, chemical mechanical polishing (CMP). Thereby, the step difference between the portion on the reflective layer 108 and the portion covering the gaps between the reflective layers 108 in the insulating film is eliminated. At this point, the insulating film includes the portion on the reflective layer 108. Thereafter, the portion of the insulating film on the reflective layer 108 is removed by dry etching, wet etching, or the like. Thereby, the entire upper surface of the reflective layer 108 is exposed. The remaining portion of the insulating film becomes the pixel isolation film 1001. The upper surface of the pixel isolation film 1001 is in a state recessed from the upper surface of the reflective layer 108. Thereafter, the upper surface of the reflective layer 108 is polished by chemical mechanical polishing (CMP). Thereby, the steps caused by the crystals and grain boundaries formed on the upper surface of the reflective layer 108 during the film formation of the reflective layer 108 are eliminated. As a result, the reflectance of the reflective layer 108 can be improved. For example, by performing CMP under conditions where the polishing rate is high for the reflective layer 108 (for example, an AL alloy) and the polishing rate is low for the pixel isolation film 1001, the variation in height between the upper surface of the reflective layer 108 and the upper surface of the pixel isolation film 1001 can be reduced.

[0074] Thereafter, the material of the interference film 110a is formed over the entire surface and patterned so that a portion covering the reflective layer 108 of the pixel 101r remains. The remaining portion becomes the interference film 110a. Thereafter, the material of the interference film 110b is formed over the entire surface and patterned so that a portion covering the reflective layers 108 of the pixels 101r and 101g remains. The remaining portion becomes the interference film 110b. Thereafter, the material of the interference film 110c is formed over the entire surface and patterned so that a portion covering the reflective layers 108 of the pixels 101r, 101g, and 101b remains. The remaining portion becomes the interference film 110c. These patterning processes may be performed above the pixel separation film 1001 or within the region of the reflective layer 108. After the formation of the separation member 111, the manufacturing method is the same as that described with reference to FIG. 4(d).

[0075] <The Seventh Embodiment> With reference to FIG. 11, a cross-sectional structure of a light-emitting device 1100 according to the seventh embodiment will be described. Differences from the light-emitting device 1000 according to the sixth embodiment in the light-emitting device 1100 will be mainly described, and redundant descriptions of points that may be the same as those of the light-emitting device 1000 will be omitted.

[0076] The upper surface of the reflective layer 108 of the light-emitting device 1100 (specifically, the upper surface of the metal layer 108b) is recessed toward the semiconductor substrate 102. In other words, with reference to the semiconductor substrate 102, the height of the central portion 1101 of the upper surface of the reflective layer 108 is lower than the height of the outer peripheral portion 1102 of the upper surface of the reflective layer 108. Since the upper surface of the reflective layer 108 is recessed, light generated in the organic layer 112 can be condensed at the light-emitting center of the pixel 101, thereby suppressing light leakage to adjacent pixels. Therefore, for example, when the light-emitting device 1100 is used as a display device, color reproducibility and display efficiency can be improved. In the example of FIG. 11, the upper surface of the reflective layer 108 is a curved surface, but the upper surface of the reflective layer 108 may include a ridge line joining surfaces.

[0077] The manufacturing method of the light-emitting device 1100 differs from that of the light-emitting device 1000 in the CMP conditions for the upper surface of the reflective layer 108. Specifically, in the manufacturing method of the light-emitting device 1100, after forming and planarizing an insulating film on the reflective layer 108, CMP is performed under conditions such that the upper surface of the reflective layer 108 is recessed due to the difference in the polishing rates of this insulating film and the reflective layer 108.

[0078] <Eighth Embodiment> Referring to FIG. 12, the cross-sectional structure of the light-emitting device 1200 according to the eighth embodiment will be described. The points that are different from the light-emitting device 1000 according to the sixth embodiment in the light-emitting device 1200 will be mainly described, and redundant descriptions for the points that may be the same as those of the light-emitting device 1000 will be omitted. The differences between the sixth embodiment and the eighth embodiment may also be applied to the seventh embodiment.

[0079] The metal layer 108a of the light-emitting device 1200 is in contact with the lower surface and the side surface of the metal layer 108b. The metal layer 108a includes a portion not covered by the metal layer 108b. The metal layer 108a is in contact with the lower electrode 110. Specifically, in the pixel 101r, the metal layer 108a is in contact with the interference film 110a. In the pixel 101g, the metal layer 108a is in contact with the interference film 110b. In the pixel 101b, the metal layer 108a is in contact with the interference film 110c. By including the portion where the metal layer 108a is in contact with the lower electrode 110, the materials of the metal layers 108a and 108b can be selected so as to reduce the contact resistance between the reflective layer 108 and the lower electrode 110. For example, the metal layer 108a may be formed of at least one of titanium, titanium nitride, and a titanium alloy. The metal layer 108b may be formed of at least one of aluminum, an aluminum alloy (e.g., including nickel), copper, a copper alloy, silver, and a silver alloy. Impurities may be mixed in these materials at a ratio of less than 1%. By reducing the contact resistance between the reflective layer 108 and the lower electrode 110, fluctuations in luminance due to voltage drop in the light-emitting element 120 of the light-emitting device 1200 can be suppressed.

[0080] Referring to FIG. 13, a modification of the cross-sectional structure of the light-emitting device 1200 according to the eighth embodiment will be described. In this modification, in each of the pixels 101r, 101g, and 101b, the metal layer 108a is in contact with the interference film 110c. When the material of the lower electrode 110 is ITO or IZO, depending on the manufacturing conditions, the contact resistance is lower when connected to titanium or titanium nitride compared to an aluminum alloy. Therefore, the contact resistance can be further reduced by the configuration as in the modification.

[0081] <Ninth Embodiment> Referring to FIG. 14, the cross-sectional structure of the light-emitting device 1400 according to the ninth embodiment will be described. The differences between the light-emitting device 1400 and the light-emitting device 1000 according to the sixth embodiment will be mainly described, and duplicate descriptions of the points that may be the same as those of the light-emitting device 1000 will be omitted. The differences between the sixth embodiment and the ninth embodiment may be applied to either the seventh embodiment or the eighth embodiment.

[0082] The reflective layer 108 of the light-emitting device 1400 further includes a metal layer 108g between the metal layer 108a and the metal layer 108b. Among the three metal layers 108a, 108b, and 108g, the metal layer 108a is closest to the semiconductor substrate 102, and the metal layer 108b is farthest from the semiconductor substrate 102. The resistivity of the material of the metal layer 108g may be higher than the resistivity of the material of either of the metal layers 108a and 108b. The reflectivity of the material of the metal layer 108g may be higher than the reflectivity of the material of either of the metal layers 108a and 108b. For example, the metal layers 108a and 108b may be formed of at least one of titanium, titanium nitride, and a titanium alloy. The metal layer 108g may be formed of at least one of aluminum, an aluminum alloy (for example, including nickel), copper, a copper alloy, silver, and a silver alloy. Impurities may be mixed in these materials at a ratio of less than 1%.

[0083] The metal layer 108b is thinner than either of the metal layers 108a and 108g. For example, the thickness of the metal layer 108b may be 8 nm or less. Since the metal layer 108b is in contact with the lower electrode 110, the contact resistance between the reflective layer 108 and the lower electrode 110 can be reduced for the same reason as in the eighth embodiment. The metal layer 108b has a larger surface free energy than the metal layer 108g. Therefore, the wettability during the formation of the interference film 110a is poor, and the surface flatness can be improved. By improving the flatness, the shift of the resonance wavelength in the optical resonance structure is suppressed, and light emission with enhanced luminance can be obtained.

[0084] <Tenth Embodiment> Referring to FIG. 15, the cross-sectional structure of the light-emitting device 1500 according to the tenth embodiment will be described. The points different from the light-emitting device 1000 according to the sixth embodiment in the light-emitting device 1500 will be mainly described, and the overlapping descriptions of the points that may be the same as those of the light-emitting device 1000 will be omitted. The differences between the sixth embodiment and the tenth embodiment may be applied to any of the seventh to ninth embodiments.

[0085] In the light-emitting device 1500, among the reflective layer 108, the respective portions included in two adjacent pixels 101 are insulated from each other by the pixel isolation films 1501 and 1502. The materials of the pixel isolation films 1501 and 1502 may be SiO, SiN, SiON, or any combination thereof. The pixel isolation film 1501 covers the side surface of the reflective layer 108, and the lower surface and the side surface of the pixel isolation film 1502. The reflective layer 108 and the pixel isolation film 1502 are separated by the pixel isolation film 1501. The interlayer insulating layer 105 and the pixel isolation film 1502 are separated by the pixel isolation film 1501.

[0086] Hereinafter, a case where the pixel isolation film 1501 is a silicon oxide film and the pixel isolation film 1502 is a silicon nitride film will be described. In this case, the selectivity ratio with the base layer when patterning the interference films 110a to 110c by dry etching or wet etching increases, and the step of the base layer caused by excessive etching of the pixel isolation film 1502 can be reduced. As a result, thinning in the step portion of the base layer when the organic layer 112 is formed is suppressed, and the leakage current between the lower electrode 110 and the upper electrode 113 can be suppressed. Thereby, the luminance variation in the low luminance region of the light emitting device 1500 can be suppressed. Since the material of the pixel isolation film 1501 is SiO having a larger bandgap than SiN, the leakage current flowing between the two portions included in the adjacent pixels 101 in the reflection layer 108 can be reduced.

[0087] <Modification of the above-described embodiment> In the above-described embodiment, the number of wiring layers from the transistor formed on the semiconductor substrate 102 to the reflection layer 108 is three, but the number of wiring layers is not limited to this. For example, the number of wiring layers may be four, five, or more. The material of the wiring may be, for example, tungsten, copper, aluminum, or the like. When copper is used as the material of the wiring, an SiC layer may be provided in order to reduce the diffusion of copper. The SiC layer may be doped with nitrogen. A capacitive element may be provided in the wiring layer. The capacitive element has, for example, a MIM structure.

[0088] [Configuration of organic light emitting element] The organic light emitting element is provided by forming an insulating layer, a first electrode, an organic compound layer, and a second electrode on a substrate. A protective layer, a color filter, a microlens, etc. may be provided on the cathode. When a color filter is provided, a planarization layer may be provided between the protective layer. The planarization layer can be composed of an acrylic resin or the like. The same applies when a planarization layer is provided between the color filter and the microlens.

[0089] [Substrate] Examples of the substrate include quartz, glass, silicon wafers, resins, metals, etc. Further, the substrate may be provided with switching elements such as transistors and wirings, and an insulating layer may be provided thereon. As the insulating layer, any material may be used as long as a contact hole can be formed so that a wiring can be formed between the insulating layer and the first electrode, and insulation from non-connected wirings can be ensured. For example, resins such as polyimide, silicon oxide, silicon nitride, etc. can be used.

[0090] [Electrode] As the electrodes, a pair of electrodes can be used. The pair of electrodes may be an anode and a cathode. When an electric field is applied in the direction in which the organic light-emitting element emits light, the electrode with a higher potential is the anode, and the other is the cathode. Also, it can be said that the electrode that supplies holes to the light-emitting layer is the anode, and the electrode that supplies electrons is the cathode.

[0091] As the constituent material of the anode, a material with as large a work function as possible is preferable. For example, simple metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, tungsten, etc., mixtures containing these, alloys combining these, metal oxides such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), indium zinc oxide, etc. can be used. Also, conductive polymers such as polyaniline, polypyrrole, polythiophene, etc. can be used.

[0092] These electrode materials may be used alone or in combination of two or more. Also, the anode may be composed of a single layer or multiple layers.

[0093] When used as a reflective electrode, for example, chromium, aluminum, silver, titanium, tungsten, molybdenum, or alloys thereof, laminated materials, etc. can be used. With the above materials, it is also possible to function as a reflective film without having the role of an electrode. When used as a transparent electrode, oxide transparent conductive layers such as indium tin oxide (ITO) and indium zinc oxide can be used, but it is not limited thereto. For the formation of the electrode, photolithography technology can be used.

[0094] On the other hand, as the constituent material of the cathode, those with a small work function are preferable. For example, alkali metals such as lithium, alkaline earth metals such as calcium, simple metals such as aluminum, titanium, manganese, silver, lead, chromium, or mixtures containing these can be mentioned. Alternatively, alloys combining these simple metals can also be used. For example, magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, zinc-silver, etc. can be used. The use of metal oxides such as indium tin oxide (ITO) is also possible. These electrode materials may be used alone or in combination of two or more. Also, the cathode may have a single-layer structure or a multi-layer structure. Among them, it is preferable to use silver, and in order to reduce the aggregation of silver, it is more preferable to use a silver alloy. As long as the aggregation of silver can be reduced, the ratio of the alloy does not matter. For example, silver: other metals may be 1:1, 3:1, etc.

[0095] The cathode may be a top-emission element using an oxide conductive layer such as ITO, or a bottom-emission element using a reflective electrode such as aluminum (Al), and is not particularly limited. As the method for forming the cathode, although not particularly limited, the use of direct current and alternating current sputtering methods, etc. is more preferable because the film coverage is good and the resistance is easily reduced.

[0096] [Pixel isolation layer] The pixel isolation layer is formed of a silicon nitride (SiN) film, a silicon oxynitride (SiON) film, or a silicon oxide (SiO) film formed using a chemical vapor deposition (CVD) method. In order to increase the in-plane resistance of the organic compound layer, the film thickness of the organic compound layer, particularly the hole transport layer, is preferably formed thinner on the sidewalls of the pixel isolation layer. Specifically, by increasing the taper angle of the sidewalls of the pixel isolation layer and the film thickness of the pixel isolation layer and increasing the peeling during vapor deposition, the film thickness of the sidewalls can be formed thinner.

[0097] On the other hand, it is preferable to adjust the taper angle of the sidewalls of the pixel isolation layer and the film thickness of the pixel isolation layer so that voids are not formed in the protective layer formed thereon. Since voids are not formed in the protective layer, the occurrence of defects in the protective layer can be reduced. Since the occurrence of defects in the protective layer is reduced, a decrease in reliability such as the occurrence of dark spots and poor conduction of the second electrode can be reduced.

[0098] According to this embodiment, even if the taper angle of the sidewalls of the pixel isolation layer is not steep, it is possible to effectively suppress charge leakage to adjacent pixels. As a result of this study, it was found that sufficient reduction can be achieved if the taper angle is in the range of 60 degrees or more and 90 degrees or less. The film thickness of the pixel isolation layer is desirably 10 nm or more and 150 nm or less. The same effect can be obtained even if the pixel electrode is composed only of a pixel electrode without a pixel isolation layer. However, in this case, it is preferable to set the film thickness of the pixel electrode to be half or less of the organic layer or to form a forward taper with an angle less than 60° at the end of the pixel electrode in order to reduce the short circuit of the organic light-emitting element.

[0099] [Organic compound layer] The organic compound layer may be formed as a single layer or multiple layers. When there are multiple layers, depending on their functions, they may be referred to as a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer. The organic compound layer is mainly composed of organic compounds, but may also contain inorganic atoms or inorganic compounds. For example, it may contain copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, etc. The organic compound layer may be disposed between the first electrode and the second electrode and may be arranged in contact with the first electrode and the second electrode.

[0100] When there are multiple light-emitting layers, a charge generation section may be provided between the first light-emitting layer and the second light-emitting layer. The charge generation section may contain an organic compound with a lowest unoccupied molecular orbital energy (LUMO) of -5.0 eV or less. The same applies when a charge generation section is provided between the second light-emitting layer and the third light-emitting layer.

[0101] [Protective layer] A protective layer may be provided on the second electrode. For example, by adhering glass provided with a moisture absorbent on the second electrode, the intrusion of water or the like into the organic compound layer can be reduced, and the occurrence of display defects can be reduced. As another embodiment, a passivation film such as silicon nitride may be provided on the cathode to reduce the intrusion of water or the like into the organic compound layer. For example, after forming the cathode, it may be transported to another chamber without breaking the vacuum, and a silicon nitride film with a thickness of 2 μm may be formed by CVD method to serve as a protective layer. A protective layer using atomic layer deposition (ALD) method may be provided after the film formation by CVD method. The material of the film by ALD method is not limited, but may be silicon nitride, silicon oxide, aluminum oxide, etc. Silicon nitride may be further formed by CVD method on the film formed by ALD method. The film by ALD method may have a smaller film thickness than the film formed by CVD method. Specifically, it may be 50% or less, and further 10% or less.

[0102] [Color filter] A color filter may be provided on the protective layer. For example, a color filter considering the size of the organic light-emitting element may be provided on another substrate, and it may be bonded to the substrate on which the organic light-emitting element is provided, or a color filter may be patterned on the protective layer shown above using photolithography technology. The color filter may be composed of a polymer.

[0103] [Planarization layer] A planarization layer may be provided between the color filter and the protective layer. The planarization layer is provided for the purpose of reducing the unevenness of the underlying layer. Without limiting the purpose, it may sometimes be called a resin layer. The planarization layer may be composed of an organic compound, and may be a low molecule or a polymer, but a polymer is preferred.

[0104] The planarization layer may be provided above and below the color filter, and its constituent materials may be the same or different. Specifically, examples include polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicon resin, urea resin, etc.

[0105] [Micro lens] The organic light-emitting device may have an optical member such as a micro lens on its light-emitting side. The micro lens can be composed of acrylic resin, epoxy resin, etc. The micro lens may be for the purpose of increasing the amount of light extracted from the organic light-emitting device and controlling the direction of the extracted light. The micro lens may have a hemispherical shape. When having a hemispherical shape, among the tangents in contact with the hemisphere, there is a tangent parallel to the insulating layer, and the contact point between the tangent and the hemisphere is the vertex of the micro lens. The vertex of the micro lens can be determined in the same way in any cross-sectional view. That is, among the tangents in contact with the semi-circle of the micro lens in the cross-sectional view, there is a tangent parallel to the insulating layer, and the contact point between the tangent and the semi-circle is the vertex of the micro lens.

[0106] In addition, the midpoint of the microlens can also be defined. In the cross-section of the microlens, a line segment from the point where the arc shape ends to the point where another arc shape ends is imagined, and the midpoint of this line segment can be called the midpoint of the microlens. The cross-section for discriminating the vertex and the midpoint may be a cross-section perpendicular to the insulating layer.

[0107] The microlens has a first surface with a convex portion and a second surface opposite to the first surface. It is preferable that the second surface is arranged closer to the functional layer side than the first surface. To adopt such a configuration, it is necessary to form a microlens on the light-emitting device. When the functional layer is an organic layer, it is preferable to avoid processes that become high temperature in the manufacturing process. Further, when adopting a configuration in which the second surface is arranged closer to the functional layer side than the first surface, it is preferable that the glass transition temperatures of all the organic compounds constituting the organic layer are 100 °C or higher, and more preferably 130 °C or higher.

[0108] [Counter substrate] A counter substrate may be provided on the planarization layer. Since the counter substrate is provided at a position corresponding to the aforementioned substrate, it is called a counter substrate. The constituent material of the counter substrate may be the same as that of the aforementioned substrate. When the aforementioned substrate is the first substrate, the counter substrate may be the second substrate.

[0109] [Organic layer] The organic compound layers (hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) constituting the organic light-emitting element according to an embodiment of the present invention are formed by the following method.

[0110] For the organic compound layers constituting the organic light-emitting element according to an embodiment of the present invention, dry processes such as vacuum evaporation, ionization evaporation, sputtering, and plasma can be used. Alternatively, instead of the dry process, a wet process of dissolving in an appropriate solvent and forming a layer by a known coating method (for example, spin coating, dipping, casting method, LB method, inkjet method, etc.) can also be used.

[0111] When a layer is formed by a vacuum deposition method, a solution coating method, or the like, crystallization and the like are less likely to occur, and the layer has excellent stability over time. When forming a film by a coating method, a film can also be formed in combination with an appropriate binder resin.

[0112] Examples of the binder resin include, but are not limited to, polyvinyl carbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, urea resin, and the like.

[0113] These binder resins may be used alone as a homopolymer or copolymer, or two or more of them may be mixed and used. Further, additives such as known plasticizers, antioxidants, and ultraviolet absorbers may be used in combination as necessary.

[0114] [Pixel Circuit] The light-emitting device may include a pixel circuit connected to the light-emitting element. The pixel circuit may be an active matrix type that independently controls light emission of the first light-emitting element and the second light-emitting element. The active matrix type circuit may be voltage programming or current programming. The driving circuit has a pixel circuit for each pixel. The pixel circuit may include a light-emitting element, a transistor that controls the light emission luminance of the light-emitting element, a transistor that controls the light emission timing, a capacitor that holds the gate voltage of the transistor that controls the light emission luminance, and a transistor for connecting to GND without passing through the light-emitting element.

[0115] The light-emitting device includes a display area and a peripheral area disposed around the display area. The display area has a pixel circuit, and the peripheral area has a display control circuit. The mobility of the transistors constituting the pixel circuit may be smaller than the mobility of the transistors constituting the display control circuit.

[0116] The slope of the current-voltage characteristics of the transistors constituting the pixel circuit may be smaller than the slope of the current-voltage characteristics of the transistors constituting the display control circuit. The slope of the current-voltage characteristics can be measured by so-called Vg-Ig characteristics.

[0117] The transistors constituting the pixel circuit are transistors connected to a light-emitting element such as a first light-emitting element.

[0118] [Pixel] The organic light-emitting device has a plurality of pixels. The pixels have sub-pixels that emit different colors from each other. The sub-pixels may have, for example, light-emitting colors of RGB respectively.

[0119] In the pixel, a region also called a pixel aperture emits light. This region is the same as the first region. The pixel aperture may be 15 μm or less and may be 5 μm or more. More specifically, it may be 11 μm, 9.5 μm, 7.4 μm, 6.4 μm, etc.

[0120] The distance between sub-pixels may be 10 μm or less. Specifically, it may be 8 μm, 7.4 μm, 6.4 μm.

[0121] In a plan view, the pixel can take a known arrangement form. For example, it may be a stripe arrangement, a delta arrangement, a pentile arrangement, or a Bayer arrangement. The shape of the sub-pixel in the plan view may take any known shape. For example, it may be a quadrilateral such as a rectangle or a rhombus, a hexagon, etc. Of course, even if it is not an exact figure but a shape close to a rectangle, it is included in the rectangle. The shape of the sub-pixel and the pixel arrangement can be used in combination.

[0122] [Use of the organic light-emitting element according to an embodiment of the present invention] The organic light-emitting element according to an embodiment of the present invention can be used as a component of a display device or a lighting device. In addition, there are applications such as an exposure light source of an electrophotographic image forming device, a backlight of a liquid crystal display device, and a light-emitting device having a color filter for a white light source.

[0123] The display device may be an image information processing device having an image input unit that inputs image information from an area CCD, a linear CCD, a memory card, etc., an information processing unit that processes the input information, and a display unit that displays the input image.

[0124] Also, the display unit of an imaging device or an inkjet printer may have a touch panel function. The driving method of this touch panel function may be an infrared method, a capacitance method, a resistive film method, or an electromagnetic induction method, and is not particularly limited. Also, the display device may be used for the display unit of a multifunction printer.

[0125] FIG. 16 is a schematic diagram showing an example of the display device according to the present embodiment. The display device 1600 may have a touch panel 1603, a display panel 1605, a frame 1606, a circuit board 1607, and a battery 1608 between an upper cover 1601 and a lower cover 1609. The touch panel 1603 and the display panel 1605 are connected to flexible printed circuits FPC 1602 and 1604. Transistors are printed on the circuit board 1607. The battery 1608 may not be provided if the display device is not a portable device, or may be provided at another position even if it is a portable device.

[0126] The display device according to the present embodiment may have a color filter having red, green, and blue. The red, green, and blue colors of the color filter may be arranged in a delta array.

[0127] The display device according to the present embodiment may be used for the display unit of a portable terminal. In that case, it may have both a display function and an operation function. Examples of the portable terminal include mobile phones such as smartphones, tablets, and head-mounted displays.

[0128] The display device according to this embodiment may be used in a display unit of an imaging device having an optical unit with a plurality of lenses and an imaging element that receives light that has passed through the optical unit. The imaging device may have a display unit that displays information acquired by the imaging element. Further, the display unit may be a display unit exposed to the outside of the imaging device or a display unit disposed in the viewfinder. The imaging device may be a digital camera or a digital video camera.

[0129] FIG. 17(a) is a schematic diagram showing an example of the imaging device according to this embodiment. The imaging device 1700 may have a viewfinder 1701, a rear display 1702, an operation unit 1703, and a housing 1704. The viewfinder 1701 may have the display device according to this embodiment. In that case, the display device may display not only the image to be captured but also environmental information, imaging instructions, etc. The environmental information may include the intensity of external light, the direction of external light, the speed at which the subject moves, the possibility that the subject is blocked by an obstacle, etc.

[0130] Since the timing suitable for imaging is a very short time, it is better to display information as soon as possible. Therefore, it is preferable to use the display device using the organic light-emitting element of the present invention. This is because the organic light-emitting element has a fast response speed. The display device using the organic light-emitting element can be more suitably used than these devices, such as a liquid crystal display device, for which a display speed is required.

[0131] The imaging device 1700 has an optical unit (not shown). The optical unit has a plurality of lenses and forms an image on an imaging element housed in the housing 1704. The plurality of lenses can adjust the focus by adjusting their relative positions. This operation can also be performed automatically. The imaging device may be called an optoelectronic conversion device. The optoelectronic conversion device may include, as imaging methods, a method of detecting the difference from a previous image instead of sequentially imaging, a method of cutting out from an image that is always recorded, etc.

[0132] Figure 17(b) is a schematic diagram showing an example of an electronic device according to this embodiment. The electronic device 1750 includes a display unit 1751, an operation unit 1752, and a housing 1753. The housing 1753 may include a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 1752 may be a button or a reaction unit of a touch panel type. The operation unit may be a biometric recognition unit that recognizes a fingerprint and performs unlocking or the like. An electronic device having a communication unit can also be called a communication device. The electronic device may further have a camera function by including a lens and an imaging device. An image captured by the camera function is displayed on the display unit. Examples of the electronic device include a smartphone and a notebook computer.

[0133] Figure 18 is a schematic diagram showing an example of a display device according to this embodiment. Figure 18(a) shows a display device such as a TV monitor or a PC monitor. The display device 1800 has a frame 1801 and a display unit 1802. The light-emitting device according to this embodiment may be used for the display unit 1802.

[0134] It has a frame 1801 and a base 1803 that supports the display unit 1802. The base 1803 is not limited to the form shown in Figure 18(a). The lower side of the frame 1801 may also serve as the base.

[0135] Further, the frame 1801 and the display unit 1802 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0136] FIG. 18(b) is a schematic diagram showing another example of the display device according to the present embodiment. The display device 1850 in FIG. 18(b) is configured to be foldable and is a so-called foldable display device. The display device 1850 has a first display unit 1851, a second display unit 1852, a housing 1853, and a bending point 1854. The first display unit 1851 and the second display unit 1852 may have the light-emitting device according to the present embodiment. The first display unit 1851 and the second display unit 1852 may be a single seamless display device. The first display unit 1851 and the second display unit 1852 can be separated at the bending point. The first display unit 1851 and the second display unit 1852 may display different images, or may display one image together with the first and second display units.

[0137] FIG. 19(a) is a schematic diagram showing an example of the lighting device according to the present embodiment. The lighting device 1900 may have a housing 1901, a light source 1902, a circuit board 1903, an optical film 1904, and a light diffusion part 1905. The light source may have the organic light-emitting element according to the present embodiment. The optical filter may be a filter that improves the color rendering property of the light source. The light diffusion part can effectively diffuse the light of the light source, such as lighting up, and deliver the light to a wide range. The optical filter and the light diffusion part may be provided on the light-emitting side of the lighting. If necessary, a cover may be provided on the outermost part.

[0138] The lighting device is, for example, a device for lighting a room. The lighting device may emit any color from white, warm white, to other colors from blue to red. It may have a dimming circuit for dimming them. The lighting device may have the organic light-emitting element of the present invention and a power supply circuit connected thereto. The power supply circuit is a circuit that converts an AC voltage into a DC voltage. Also, white means a color temperature of 4200K and warm white means a color temperature of 5000K. The lighting device may have a color filter.

[0139] Also, the lighting device according to the present embodiment may have a heat dissipation part. The heat dissipation part releases the heat inside the device to the outside of the device, and examples thereof include a metal with a high specific heat and liquid silicon.

[0140] FIG. 19(b) is a schematic diagram of an automobile which is an example of a moving body according to the present embodiment. The automobile has a tail lamp which is an example of a lighting device. The automobile 1950 may have a tail lamp 1951 and may be configured to light the tail lamp when a braking operation or the like is performed.

[0141] The tail lamp 1951 may have an organic light-emitting element according to the present embodiment. The tail lamp may have a protective member for protecting the organic EL element. The protective member has a certain degree of strength and may be made of any material as long as it is transparent, but is preferably made of polycarbonate or the like. A phthalic acid derivative, an acrylonitrile derivative or the like may be mixed with the polycarbonate.

[0142] The automobile 1950 may have a vehicle body 1953 and a window 1952 attached thereto. The window may be a transparent display as long as it is not a window for checking the front and rear of the automobile. The transparent display may have an organic light-emitting element according to the present embodiment. In this case, constituent materials such as electrodes of the organic light-emitting element are made of transparent members.

[0143] The moving body according to the present embodiment has a driving unit such as an engine and a motor, and a moving unit such as wheels, a propeller, and tires. For example, the moving body may be an automobile, a ship, an aircraft, a drone, a bicycle, a railway vehicle, or the like. The moving body may have a fuselage and a lighting device provided on the fuselage. The lighting device may emit light for notifying the position of the fuselage. The lighting device has an organic light-emitting element according to the present embodiment.

[0144] With reference to FIG. 20, application examples of the display device of each of the above-described embodiments will be described. The display device can be applied to a system that can be worn as a wearable device such as smart glasses, an HMD, or smart contacts. The imaging display device used in such an application example has an imaging device capable of photoelectrically converting visible light and a display device capable of emitting visible light.

[0145] Figure 20(a) illustrates glasses 2000 (smart glasses) according to one application example. An imaging device 2002 such as a CMOS sensor or a SPAD is provided on the front surface side of the lens 2001 of the glasses 2000. Also, a display device of each of the above-described embodiments is provided on the back surface side of the lens 2001.

[0146] The glasses 2000 further include a control device 2003. The control device 2003 functions as a power supply that supplies power to the imaging device 2002 and the display device according to each embodiment. Also, the control device 2003 controls the operations of the imaging device 2002 and the display device. An optical system for condensing light onto the imaging device 2002 is formed in the lens 2001.

[0147] Figure 20(b) illustrates glasses 2050 (smart glasses) according to one application example. The glasses 2050 have a control device 2052. An imaging device corresponding to the imaging device 2002 and a display device are mounted on the control device 2052. An optical system for projecting the light emitted from the display device in the control device 2052 is formed in the lens 2051, and an image is projected onto the lens 2051. The control device 2052 functions as a power supply that supplies power to the imaging device and the display device, and controls the operations of the imaging device and the display device. The control device may have a gaze detection unit that detects the wearer's gaze. Infrared rays may be used for gaze detection. The infrared light emitting unit emits infrared light to the eyeball of the user who is gazing at the display image. The imaging unit having a light receiving element detects the reflected light of the emitted infrared light from the eyeball, thereby obtaining an imaging image of the eyeball. By having a reduction unit that reduces the light from the infrared light emitting unit to the display unit in a plan view, a reduction in image quality is reduced.

[0148] The user's gaze with respect to the display image is detected from the imaging image of the eyeball obtained by imaging infrared light. Any known method can be applied to gaze detection using the imaging image of the eyeball. As an example, a gaze detection method based on a Purkinje image by reflection of irradiation light on the cornea can be used.

[0149] More specifically, a gaze detection process based on the pupil corneal reflex method is performed. Using the pupil corneal reflex method, a gaze vector representing the orientation (rotation angle) of the eyeball is calculated based on the image of the pupil and the Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0150] The display device according to an embodiment of the present invention may include an imaging device having a light receiving element, and may control the display image of the display device based on the user's gaze information from the imaging device.

[0151] Specifically, the display device determines a first display area that the user is gazing at and a second display area other than the first display area based on the gaze information. The first display area and the second display area may be determined by the control device of the display device, or the display device may receive those determined by an external control device. In the display area of the display device, the display resolution of the first display area may be controlled to be higher than that of the second display area. That is, the resolution of the second display area may be made lower than that of the first display area.

[0152] Also, the display area has a first display area and a second display area different from the first display area, and based on the gaze information, an area with a higher priority is determined from the first display area and the second display area. The first display area and the second display area may be determined by the control device of the display device, or the display device may receive those determined by an external control device. The resolution of the area with a higher priority may be controlled to be higher than that of the area other than the area with a higher priority. That is, the resolution of the area with a relatively lower priority may be made lower.

[0153] Note that AI may be used to determine the first display area or the area with a higher priority. AI may be a model configured to estimate the angle of the gaze and the distance to the target at the tip of the gaze from the image of the eyeball, using the image of the eyeball and the direction in which the eyeball in the image is actually looking as teacher data. The AI program may be possessed by the display device, the imaging device, or an external device. When an external device possesses it, it is transmitted to the display device via communication.

[0154] When performing display control based on visual recognition, it can be preferably applied to smart glasses further having an imaging device for imaging the outside. The smart glasses can display the imaged external information in real time.

[0155] <Summary of Embodiment> (Item 1) A light-emitting device, a substrate, an interlayer insulating layer located on the substrate and having a conductive member embedded therein, a stacked structure located on the interlayer insulating layer and composed of a plurality of metal layers stacked on one another, and a light-emitting element located on the stacked structure, wherein the plurality of metal layers include a first metal layer including a portion in contact with the conductive member, and a second metal layer located on the first metal layer, wherein the second metal layer has a reflecting surface that reflects light from the light-emitting element toward the light-emitting element, the specific resistance of the material of the first metal layer is higher than the specific resistance of the material of the second metal layer, and the reflectance of the material of the second metal layer is higher than the reflectance of the material of the first metal layer. (Item 2) The light-emitting device according to Item 1, further comprising a light-transmitting layer between the stacked structure and the light-emitting element. (Item 3) The light-emitting element includes a lower electrode and an upper electrode located on the lower electrode, wherein a part of the lower electrode penetrates the light-transmitting layer and is in contact with the stacked structure. The light-emitting device according to Item 2. (Item 4) The light-emitting device according to Item 3, wherein a part of the lower electrode further penetrates the second metal layer. (Item 5) The light-emitting device according to Item 4, wherein a part of the lower electrode is in contact with the first metal layer. (Item 6) The light-emitting element includes a lower electrode and an upper electrode positioned on the lower electrode. The light-emitting device according to item 2, wherein a distance between a portion of the lower electrode closest to the substrate and the substrate is shorter than a distance between the substrate and the reflecting surface. (Item 7) The light-emitting element includes a lower electrode and an upper electrode positioned on the lower electrode. The light-emitting device according to item 1, wherein a distance between a portion of the lower electrode closest to the substrate and the substrate is the same as a distance between the substrate and the reflecting surface. (Item 8) The first metal layer is formed of at least one of titanium, titanium nitride, and a titanium alloy. The light-emitting device according to any one of items 1 to 7, wherein the second metal layer is formed of at least one of aluminum, an aluminum alloy, copper, a copper alloy, silver, and a silver alloy. (Item 9) The light-emitting device according to any one of items 1 to 8, wherein the first metal layer is thinner than the second metal layer. (Item 10) The plurality of metal layers include a third metal layer positioned on the first metal layer, and a fourth metal layer positioned above the third metal layer and below the second metal layer. The light-emitting device according to any one of items 1 to 9. (Item 11) Each of the first metal layer and the fourth metal layer is formed of at least one of titanium, titanium nitride, and a titanium alloy. The light-emitting device according to item 10, wherein each of the second metal layer and the third metal layer is formed of at least one of aluminum, an aluminum alloy, copper, a copper alloy, silver, and a silver alloy. (Item 12) The light-emitting device according to item 10 or 11, wherein the third metal layer is thicker than either the first metal layer or the fourth metal layer. (Item 13) The light-emitting device according to any one of items 10 to 12, wherein the second metal layer is thinner than the third metal layer. (Item 14) The light-emitting device according to any one of items 10 to 13, wherein the thickness of the second metal layer is 10 nm or more and 100 nm or less. (Item 15) The light-emitting device according to any one of items 1 to 14, wherein the thickness of the laminated structure is 200 nm or more and 2000 nm or less. (Item 16) The light-emitting device further includes a lower electrode located on the laminated structure, an organic layer located on the lower electrode, and an upper electrode located on the organic layer. The light-emitting device according to any one of items 1 to 15, wherein the light-emitting element is formed by a part of the lower electrode, a part of the organic layer, and a part of the upper electrode. (Item 17) The light-emitting device according to item 16, wherein the lower electrode includes a contact portion in contact with the organic layer and a non-contact portion separated from the organic layer by a separation member. (Item 18) The light-emitting device according to item 17, wherein the lower electrode has a plurality of steps between the contact portion and a portion in contact with the laminated structure. (Item 19) The light-emitting device according to any one of items 1 to 18, wherein the portion of the laminated structure in contact with the conductive member is electrically connected to the reflective surface. (Item 20) The light-emitting device according to any one of items 1 to 19, wherein the portion of the laminated structure in contact with the conductive member is electrically separated from the reflective surface. (Item 21) The light-emitting device according to any one of items 1 to 20, wherein the second metal layer is the uppermost layer of the plurality of metal layers. (Item 22) The light-emitting device further includes a lower electrode located on the laminated structure, an organic layer positioned above the lower electrode, and an upper electrode positioned above the organic layer, wherein the light-emitting element is formed by a part of the lower electrode, a part of the organic layer, and a part of the upper electrode, the light-emitting device according to item 1, wherein the lower electrode is in contact with the second metal layer on the side opposite to the part in contact with the organic layer. (Item 23) the light-emitting device according to item 22, wherein the first metal layer does not contact the lower electrode. (Item 24) the light-emitting device according to item 22 or 23, wherein the upper surface of the second metal layer is recessed toward the substrate. (Item 25) the light-emitting device according to any one of items 22 to 24, wherein the first metal layer is in contact with the side surface of the second metal layer and the lower electrode. (Item 26) the plurality of metal layers further includes a fifth metal layer between the first metal layer and the second metal layer, the light-emitting device according to any one of items 22 to 25, wherein the second metal layer is thinner than either the first metal layer or the fifth metal layer. (Item 27) the light-emitting device according to item 26, wherein the thickness of the second metal layer is 8 nm or less. (Item 28) the plurality of metal layers further includes a fifth metal layer between the first metal layer and the second metal layer, wherein the resistivity of the material of the fifth metal layer is higher than that of the materials of either the first metal layer or the second metal layer, the light-emitting device according to any one of items 22 to 27, wherein the reflectivity of the material of the fifth metal layer is higher than that of the materials of either the first metal layer or the second metal layer. (Item 29) the stacked structure is separated into a plurality of parts, the light-emitting device according to any one of items 22 to 27, further comprising a separation film for insulating the plurality of parts from each other. (Item 30) The lower electrode is the light-emitting device according to Item 29, which covers the boundary between the laminated structure and the separation film. (Item 31) The separation film is the light-emitting device according to Item 29 or 30, which is composed of a laminated silicon oxide film and a silicon nitride film. (Item 32) A display device, comprising the light-emitting device according to any one of Items 1 to 31, and an element connected to the light-emitting device. (Item 33) An optoelectronic conversion device, comprising an optical unit having a plurality of lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image, wherein the display unit is a display unit that displays an image captured by the image sensor, and has the light-emitting device according to any one of Items 1 to 31. (Item 34) An electronic device, comprising a housing provided with a display unit, and a communication unit provided in the housing and communicating with the outside, wherein the display unit has the light-emitting device according to any one of Items 1 to 31. (Item 35) An illumination device, comprising a light source, and at least one of a light diffusing unit and an optical film, wherein the light source has the light-emitting device according to any one of Items 1 to 31. (Item 36) A moving body, comprising a body, and a lighting fixture provided on the body, wherein the lighting fixture has the light-emitting device according to any one of Items 1 to 31.

[0156] The invention is not limited to the above embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, the claims are attached to disclose the scope of the invention.

Description of Reference Numerals

[0157] 100 Light-emitting device, 108 Reflective layer, 108a Metal layer, 108b Metal layer

Claims

1. 1. A light emitting device, comprising: A substrate; an interlayer insulating layer located on the substrate and having a conductive member embedded therein; a laminated structure formed by a plurality of metal layers stacked on the interlayer insulating layer; a light emitting element located on the stacked structure, The plurality of metal layers include a first metal layer including a portion in contact with the conductive member; a second metal layer overlying the first metal layer; the second metal layer has a reflective surface that reflects light from the light emitting element toward the light emitting element; the resistivity of the material of the first metal layer is higher than the resistivity of the material of the second metal layer; A light emitting device, wherein a reflectivity of the material of the second metal layer is higher than a reflectivity of the material of the first metal layer.

2. The light emitting device according to claim 1 , further comprising a light transmitting layer between the laminated structure and the light emitting element.

3. The light emitting element includes a lower electrode and an upper electrode located on the lower electrode, The light emitting device according to claim 2 , wherein a portion of the lower electrode penetrates the light transmitting layer and is in contact with the laminated structure.

4. The light emitting device of claim 3 , wherein a portion of the bottom electrode further penetrates the second metal layer.

5. The light emitting device of claim 4 , wherein a portion of the bottom electrode is in contact with the first metal layer.

6. The light emitting element includes a lower electrode and an upper electrode located on the lower electrode, The light emitting device according to claim 2 , wherein a distance between the substrate and a portion of the lower electrode closest to the substrate is shorter than a distance between the substrate and the reflective surface.

7. The light emitting element includes a lower electrode and an upper electrode located on the lower electrode, The light emitting device according to claim 1 , wherein the distance between the substrate and a portion of the lower electrode closest to the substrate is the same as the distance between the substrate and the reflective surface.

8. the first metal layer is formed of at least one of titanium, titanium nitride, and a titanium alloy; 10. The light emitting device of claim 1, wherein the second metal layer is formed of at least one of aluminum, an aluminum alloy, copper, a copper alloy, silver, and a silver alloy.

9. The light emitting device of claim 1 , wherein the first metal layer is thinner than the second metal layer.

10. The plurality of metal layers include a third metal layer overlying the first metal layer; and 10. The light emitting device of claim 1, further comprising a fourth metal layer located above the third metal layer and below the second metal layer.

11. each of the first metal layer and the fourth metal layer is formed of at least one of titanium, titanium nitride, and a titanium alloy; 11. The light emitting device of claim 10, wherein each of the second metal layer and the third metal layer is formed of at least one of aluminum, an aluminum alloy, copper, a copper alloy, silver, and a silver alloy.

12. The light emitting device of claim 10 , wherein the third metal layer is thicker than both the first metal layer and the fourth metal layer.

13. The light emitting device of claim 10 , wherein the second metal layer is thinner than the third metal layer.

14. The light emitting device according to claim 10 , wherein the second metal layer has a thickness of 10 nm or more and 100 nm or less.

15. The light emitting device according to claim 1 , wherein the thickness of the laminated structure is not less than 200 nm and not more than 2000 nm.

16. The light emitting device comprises: a lower electrode located on the stack; an organic layer overlying the lower electrode; a top electrode overlying the organic layer, The light emitting device according to claim 1 , wherein the light emitting element is formed by a part of the lower electrode, a part of the organic layer, and a part of the upper electrode.

17. 17. The light emitting device of claim 16, wherein the lower electrode includes a contact portion in contact with the organic layer and a non-contact portion separated from the organic layer by a separating member.

18. The light emitting device according to claim 17 , wherein the lower electrode has a plurality of steps between the contact portion and a portion in contact with the laminated structure.

19. The light emitting device according to claim 1 , wherein the portion of the laminated structure that is in contact with the conductive member is electrically connected to the reflective surface.

20. The light emitting device according to claim 1 , wherein the portion of the laminated structure that is in contact with the conductive member is electrically isolated from the reflective surface.

21. The light emitting device of claim 1 , wherein the second metal layer is an uppermost layer of the plurality of metal layers.

22. The light emitting device comprises: a lower electrode located on the stack; an organic layer overlying the lower electrode; a top electrode overlying the organic layer, the light-emitting element is formed by a portion of the lower electrode, a portion of the organic layer, and a portion of the upper electrode; The light-emitting device according to claim 1 , wherein the lower electrode is in contact with the second metal layer on a side opposite to a portion in contact with the organic layer.

23. 23. The light emitting device of claim 22, wherein the first metal layer does not contact the bottom electrode.

24. 23. The light emitting device of claim 22, wherein a top surface of said second metal layer is recessed towards said substrate.

25. The light emitting device of claim 22 , wherein the first metal layer contacts a side surface of the second metal layer and the bottom electrode.

26. the plurality of metal layers further includes a fifth metal layer between the first metal layer and the second metal layer; 23. The light emitting device of claim 22, wherein the second metal layer is thinner than both the first metal layer and the fifth metal layer.

27. 27. The light emitting device of claim 26, wherein the second metal layer has a thickness of less than or equal to 8 nm.

28. the plurality of metal layers further includes a fifth metal layer between the first metal layer and the second metal layer; a resistivity of a material of the fifth metal layer is higher than a resistivity of a material of the first metal layer and a resistivity of a material of the second metal layer; 23. The light emitting device of claim 22, wherein a reflectivity of the material of the fifth metal layer is higher than a reflectivity of the material of either the first metal layer or the second metal layer.

29. The laminate structure is separated into a plurality of portions, The light emitting device of claim 22 , further comprising an isolation film insulating the plurality of portions from each other.

30. The light emitting device according to claim 29 , wherein the lower electrode covers a boundary between the stacked structure and the isolation film.

31. 30. The light emitting device according to claim 29, wherein the isolation film is composed of a silicon oxide film and a silicon nitride film which are stacked together.

32. 32. A display device comprising: a light-emitting device according to claim 1; and an element connected to the light-emitting device.

33. The imaging device includes an optical unit having a plurality of lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image, 32. A photoelectric conversion device, comprising: the display unit that displays an image captured by the imaging element; and the light-emitting device according to claim 1.

34. A display device having a housing and a communication unit provided in the housing for communicating with an external device, 32. An electronic device, comprising: a display unit comprising the light-emitting device according to claim 1.

35. A lighting device having a light source and at least one of a light diffusion unit and an optical film, 32. An illumination device, characterized in that the light source comprises a light emitting device according to any one of claims 1 to 31.

36. A moving body having a body and a lighting device provided on the body, 32. A moving body, comprising: a lighting device comprising the light-emitting device according to claim 1.

Images