Display device

Abstract

To provide a display device with an imaging function, a display device that can easily achieve a higher resolution, and a display device that can perform imaging at higher speed.SOLUTION: A display device includes a first pixel, a second pixel, and a first wiring. The first pixel includes a light-emitting element. The second pixel includes a light-receiving element. The first pixel is supplied with image data from the first wiring. The second pixel outputs received-light data to the first wiring.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] One aspect of the present invention relates to a display device. One aspect of the present invention relates to a display device having an imaging function. One aspect of the present invention relates to an imaging device. One aspect of the present invention relates to an electronic device including a display device.

[0002] Note that one aspect of the present invention is not limited to the above technical field. Examples of the technical field of one aspect of the present invention disclosed in this specification and the like include semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices, input / output devices, their driving methods, or their manufacturing methods. A semiconductor device refers to all devices that can function by utilizing semiconductor characteristics.

Background Art

[0003] In recent years, electronic devices such as information terminal devices including smartphones, tablet terminals, and notebook PCs (personal computers) have been required to be miniaturized and consume less power. Display devices mounted on such electronic devices are required to have various functions in addition to displaying images, such as a function as a touch panel and a function of imaging fingerprints for authentication.

[0004] As a display device, for example, a light-emitting device having a light-emitting element has been developed. A light-emitting element (also referred to as an EL element) that utilizes the electroluminescence (hereinafter abbreviated as EL) phenomenon has characteristics such as being easily thinned and lightened, being able to respond quickly to an input signal, and being drivable using a DC constant voltage power supply, and has been applied to display devices. For example, Patent Document 1 discloses a flexible light-emitting device to which an organic EL element is applied.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] One aspect of the present invention is to provide a display device having an imaging function as one of the problems. One aspect of the present invention is to provide a display device that can be easily made high-definition as one of the problems. One aspect of the present invention is to provide a display device capable of high-speed imaging as one of the problems. One aspect of the present invention is to provide a display device capable of imaging fingerprints as one of the problems. One aspect of the present invention is to provide a display device that functions as a touch panel as one of the problems.

[0007]

[0008]

Means for Solving the Problems

[0009]

[0010] One aspect of the present invention is a display device having a first pixel, a second pixel, and a first wiring. The first pixel has a light-emitting element. The second pixel has a light-receiving element. The first pixel is supplied with image data from the first wiring. The second pixel outputs light-receiving data to the first wiring. ​​Another aspect of the present invention is a display device having first to third wirings and first to sixth pixels. The first pixel, the third pixel, and the fifth pixel each have a light-emitting element that emits light of a different color. The second pixel, the fourth pixel, and the sixth pixel each have a light-receiving element. The first pixel is supplied with first image data from the first wiring. The third pixel is supplied with second image data from the second wiring. The fifth pixel is supplied with third image data from the third wiring. The second pixel outputs first light-receiving data to the first wiring. The fourth pixel outputs second light-receiving data to the second wiring. The sixth pixel outputs third light-receiving data to the third wiring.

[0011] Also, in the above, it is preferable that the second pixel, the fourth pixel, and the sixth pixel each have a light-receiving element that receives light of a different color.

[0012] Also, in any of the above, it is preferable to further have fourth to seventh wirings. At this time, the first pixel is supplied with a first selection signal from the fourth wiring. The second pixel is supplied with a second selection signal from the fifth wiring. The third pixel is supplied with a third selection signal from the sixth wiring. The fourth pixel, the fifth pixel, and the sixth pixel are supplied with a fourth selection signal from the seventh wiring.

[0013] Also, in any of the above, it is preferable that the first pixel has a first transistor and a second transistor. At this time, it is preferable that one of the source and the drain of the first transistor is electrically connected to the first wiring, and the other of the source and the drain is electrically connected to the gate of the second transistor. Also, it is preferable that one of the source and the drain of the second transistor is electrically connected to one electrode of the light-emitting element.

[0014] Also, in any of the above, it is preferable that the second pixel includes a third transistor, a fourth transistor, and a fifth transistor. At this time, for the third transistor, it is preferable that one of the source and the drain is electrically connected to the first wiring, and the other of the source and the drain is electrically connected to one of the source and the drain of the fourth transistor. Also, for the fourth transistor, it is preferable that the gate is electrically connected to one of the source and the drain of the fifth transistor. Also, for the fifth transistor, it is preferable that one of the source and the drain is electrically connected to one of the electrodes of the light receiving element.

[0015] Another aspect of the present invention is a display device having a first pixel and a first wiring. The first pixel includes a light emitting and receiving element. The light emitting and receiving element has a function of emitting light in response to an electric field and a function of photoelectrically converting irradiated light. The first pixel is supplied with image data from the first wiring. Also, the first pixel outputs light receiving data to the first wiring.

[0016] Another aspect of the present invention is a display device having first to third wirings and first to fifth pixels. The first pixel, the second pixel, and the fourth pixel each include a light emitting and receiving element. The light emitting and receiving element has a function of emitting light in response to an electric field and a function of photoelectrically converting irradiated light. The third pixel and the fifth pixel each include a light emitting element that emits light of a different color. The first pixel is supplied with first image data from the first wiring. The second pixel is supplied with second image data from the first wiring. The third pixel is supplied with third image data from the second wiring. The fourth pixel is supplied with fourth image data from the first wiring. The fifth pixel is supplied with fifth image data from the third wiring. The first pixel outputs first light receiving data to the first wiring. The second pixel outputs second light receiving data to the second wiring. The fourth pixel outputs third light receiving data to the third wiring.

[0017] Further, in the above, it is preferable to further include fourth to seventh wirings. At this time, the first pixel is supplied with the first selection signal from the fourth wiring. The second pixel and the third pixel are supplied with the second selection signal from the fifth wiring. The fourth pixel and the fifth pixel are supplied with the third selection signal from the sixth wiring. The first pixel, the second pixel, and the fourth pixel are supplied with the fourth selection signal from the seventh wiring.

[0018] Further, in any of the above, it is preferable that the first pixel includes first to sixth transistors. At this time, for the first transistor, it is preferable that one of the source and the drain is electrically connected to the first wiring, and the other of the source and the drain is electrically connected to the gate of the second transistor. Also, for the second transistor, it is preferable that one of the source and the drain is electrically connected to one of the source and the drain of the sixth transistor. Also, for the third transistor, it is preferable that one of the source and the drain is electrically connected to the first wiring, and the other of the source and the drain is electrically connected to one of the source and the drain of the fourth transistor. For the fourth transistor, it is preferable that the gate is electrically connected to one of the source and the drain of the fifth transistor. For the fifth transistor, it is preferable that one of the source and the drain is electrically connected to one of the electrodes of the light-emitting and receiving element. For the sixth transistor, it is preferable that the other of the source and the drain is electrically connected to one of the electrodes of the light-emitting and receiving element.

[0019] Further, in any of the above, it is preferable to further include a selector circuit, a digital-to-analog conversion circuit, an analog-to-digital conversion circuit, an eighth wiring, and a ninth wiring. At this time, the selector circuit preferably has a function of selecting conduction between either one of the eighth wiring and the ninth wiring and the first wiring. Also, the digital-to-analog conversion circuit preferably has an output terminal electrically connected to the eighth wiring. Further, the analog-to-digital conversion circuit preferably has an input terminal electrically connected to the ninth wiring.

Advantages of the Invention

[0020] According to one aspect of the present invention, a display device having an imaging function can be provided. Or, a display device that can be easily made high-definition can be provided. Or, a display device capable of high-speed imaging can be provided. Or, a display device capable of fingerprint imaging can be provided. Or, a display device functioning as a touch panel can be provided.

[0021] Also, according to one aspect of the present invention, the number of components of an electronic device can be reduced. Or, a multifunctional display device can be provided. Or, a display device, an imaging device, or an electronic device having a novel configuration can be provided. Or, at least one of the problems of the prior art can be at least alleviated.

[0022] Note that the description of these effects does not prevent the existence of other effects. Note that one aspect of the present invention does not necessarily have to have all of these effects. Note that other effects can be extracted from the descriptions in the specification, drawings, claims, etc.

Brief Description of the Drawings

[0023]

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Embodiments for Carrying Out the Invention

[0024] Hereinafter, embodiments will be described with reference to the drawings. However, it is easily understood by those skilled in the art that the embodiments can be implemented in many different modes, and the forms and details thereof can be variously changed without departing from the spirit and scope. Therefore, the present invention is not construed as being limited to the description of the following embodiments.

[0025] In the configuration of the invention described below, the same reference numerals are commonly used among different drawings for the same part or parts having the same or similar functions, and the repeated description thereof is omitted. Also, when referring to similar functions, the hatch patterns may be the same, and there may be cases where no particular reference numerals are attached.

[0026] In each of the drawings described in this specification, the size of each component, the thickness of a layer, or the area may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale.

[0027] Note that ordinal numbers such as "first" and "second" in this specification are attached to avoid confusion of components and are not numerically limiting.

[0028] A transistor is a type of semiconductor device and can realize functions such as amplifying current or voltage and a switching operation for controlling conduction or non - conduction. The transistors in this specification include IGFETs (Insulated Gate Field Effect Transistors) and thin - film transistors (TFTs: Thin Film Transistors).

[0029] In addition, the functions of the "source" and "drain" may be interchanged when transistors with different polarities are adopted, or when the direction of the current changes during circuit operation. Therefore, in this specification, the terms "source" and "drain" are assumed to be interchangeable.

[0030] In addition, in this specification and the like, "electrically connected" includes cases where it is connected via "something having some electrical effect". Here, "something having some electrical effect" is not particularly limited as long as it enables the exchange of electrical signals between the connection targets. For example, "something having some electrical effect" includes electrodes and wiring, switching elements such as transistors, resistance elements, coils, capacitance elements, and other elements having various functions.

[0031] Note that in the following, expressions indicating directions such as "up" and "down" are basically used in accordance with the direction of the drawing. However, for the purpose of facilitating the explanation, etc., the direction indicated by "up" or "down" in the specification may not match the drawing. As an example, when explaining the stacking order (or formation order) of a laminate, etc., even if the surface (formed surface, support surface, adhesive surface, flat surface, etc.) on which the laminate is provided in the drawing is located above the laminate, the direction may be expressed as down, and the opposite direction as up, etc.

[0032] In this specification and the like, a display panel, which is an aspect of a display device, has a function of displaying (outputting) an image or the like on a display surface. Therefore, the display panel is an aspect of an output device.

[0033] In addition, in this specification and the like, a display panel module, a display module, or simply a display panel, etc. may refer to something in which a connector such as an FPC (Flexible Printed Circuit) or a TCP (Tape Carrier Package) is attached to the substrate of the display panel, or something in which an IC is mounted on the substrate by a COG (Chip On Glass) method or the like.

[0034] (Embodiment 1) In this embodiment, a configuration example of a display device according to an aspect of the present invention will be described.

[0035] One aspect of the present invention is a display device having a plurality of pixels arranged in a matrix. Each pixel has one or more sub-pixels. In this specification and the like, a sub-pixel may be simply referred to as a pixel.

[0036] For example, a pixel according to one aspect of the present invention has a display pixel (also referred to as a first pixel or the like) and a light-receiving pixel (also referred to as a second pixel or the like). The display pixel has a light-emitting element that functions as a display element and a display pixel circuit. The light-receiving pixel has a light-receiving element that functions as a photoelectric conversion element and a light-receiving pixel circuit. One aspect of the present invention can display an image with a plurality of light-emitting elements arranged in a matrix. Also, an image can be captured with a plurality of light-receiving elements arranged in a matrix. Therefore, one aspect of the present invention can also be referred to as a display device having an imaging function.

[0037] The light-emitting element can also be referred to as an electroluminescent element, and by applying a voltage between a pair of electrodes, it can emit light with a luminance corresponding to the magnitude of the current flowing through the light-emitting element. The light-receiving element functions as a photoelectric conversion element and can generate an amount of electric charge corresponding to the intensity of the received light.

[0038] Also, the display device has a first wiring electrically connected to the display pixels and the light-receiving pixels. Image data is input to the display pixels via the first wiring. The image data is data including a data potential, and the display pixels can cause the light-emitting elements to emit light with a light-emitting luminance based on the potential included in the first data. Therefore, the first wiring functions as a signal line, a source line, an image signal line, or the like.

[0039] In addition, the light-receiving pixel can output light-receiving data to the first wiring. The light-receiving data is data including information on the intensity of light received by the light-receiving element. The light-receiving pixel has a function of outputting data corresponding to the amount of charge generated in the light-receiving element to the first wiring as a current or a potential. Therefore, the first wiring functions as a readout line, a readout signal line, or the like.

[0040] In this way, the first wiring can have both a function of transmitting image data to the display pixel and a function of transmitting the light-receiving data output from the light-receiving pixel. As a result, the number of wirings can be reduced as compared with the case where each is configured by an individual wiring. Therefore, it becomes easy to increase the definition of the display device.

[0041] It is preferable that different selection signals are applied to the display pixel and the light-receiving pixel. For example, during the period when the first selection signal is applied to the display pixel, the image data given from the first wiring can be written into the display pixel. Also, during the period when the second selection signal is applied to the light-receiving pixel, the light-receiving data can be output from the light-receiving pixel to the first wiring. In this way, by using different selection signals, the writing operation and the reading operation can be respectively executed in different periods.

[0042] Moreover, it is preferable to adopt a configuration including three display pixels presenting different colors in one pixel and one light-receiving pixel. The display pixels are configured such that image data is given from different wirings. At this time, in three pixels adjacent in the extending direction of the wiring (also referred to as the column direction), it is preferable that each light-receiving pixel outputs light-receiving data to different ones of the wirings. Further, it is preferable that the three pixels are given a selection signal from the same selection signal line. As a result, it becomes possible to simultaneously read out the light-receiving data for three rows, and the time required for reading is significantly shortened as compared with the case where reading is executed for each column, enabling the speeding up of the reading operation.

[0043] Further, the display device may be configured to include a light-emitting and light-receiving element having both functions of light emission and light reception. The light-emitting and light-receiving element can also be said to have a function of emitting light in response to an electric field and a function of photoelectrically converting irradiated light.

[0044] At this time, for example, a sub-pixel electrically connected to the first wiring may be configured to have a light-emitting and light-receiving element and a pixel circuit. At this time, the pixel circuit can be configured to have a function of controlling the light emission of the light-emitting and light-receiving element and a function of controlling the light reception and reading of the light-emitting and light-receiving element. The sub-pixel can cause the light-emitting and light-receiving element to emit light with a luminance corresponding to the image data given from the first wiring, and output reception data corresponding to the intensity of the light received by the light-emitting and light-receiving element to the first wiring.

[0045] In this way, by configuring one sub-pixel to have both functions of light emission for display and light reception for imaging, and further sharing the signal line and the readout line, a display device with extremely high definition can be realized.

[0046] Hereinafter, a more specific example will be described with reference to the drawings.

[0047] [Configuration Example 1 of Display Device] [Configuration Example 1-1] FIG. 1A shows a circuit diagram of the display device 10. The display device 10 includes a display unit 11, a circuit unit 12, a circuit unit 13, and a circuit unit 14.

[0048] The display unit 11 includes a plurality of pixels 20 arranged in a matrix. The pixel 20 includes a pixel 21R, a pixel 21G, a pixel 21B, and a light-receiving pixel 22. The pixel 21R, the pixel 21G, and the pixel 21B can each be referred to as a sub-pixel. Also, the light-receiving pixel 22 can also be referred to as a sub-pixel.

[0049] Pixel 21R, Pixel 21G, and Pixel 21B each have a light-emitting element. For example, Pixel 21R has a light-emitting element that emits red light, Pixel 21G has a light-emitting element that emits green light, and Pixel 21B has a light-emitting element that emits blue light. Note that a light-emitting element that emits white light may be applied to Pixel 21R, Pixel 21G, and Pixel 21B respectively, and a configuration in which light of each color is emitted using different color filters may also be adopted.

[0050] The light-receiving pixel 22 has a light-receiving element that functions as a photoelectric conversion element. The light-receiving element included in the light-receiving pixel 22 has sensitivity to light in one or more wavelength ranges among visible light, infrared light, and ultraviolet light.

[0051] The wiring GL and the wiring SLR are electrically connected to the pixel 21R. The wiring GL and the wiring SLG are electrically connected to the pixel 21G. The wiring GL and the wiring SLB are electrically connected to the pixel 21B. The wiring TX, the wiring RS, the wiring SE, and the wiring SLR are electrically connected to the light-receiving pixel 22. Note that, although an example in which the wiring SLR is electrically connected to the light-receiving pixel 22 is shown here, the wiring SLG or the wiring SLB may be electrically connected.

[0052] The wiring SLR, the wiring SLG, and the wiring SLB are each electrically connected to the circuit unit 12. The wiring GL is electrically connected to the circuit unit 13. The wiring TX, the wiring RS, and the wiring SE are each electrically connected to the circuit unit 14.

[0053] The circuit unit 12 has functions as a source line driving circuit (also referred to as a source driver) and as a readout circuit. The circuit unit 12 supplies image data (also referred to as a data signal, an image signal, a source signal, a data potential, etc.) to the pixel 21R, the pixel 21G, the pixel 21B, etc. via the wiring SLR, the wiring SLG, and the wiring SLB. Further, received data (also referred to as a received signal, a received potential, etc.) is input to the circuit unit 12 from the light-receiving pixel 22 via the wiring SLR. The circuit unit 12 also has a function of converting the input received data into digital imaging data and outputting it to the outside. Note that the circuit unit functioning as the source line driving circuit and the circuit unit functioning as the readout circuit may be provided separately. At this time, the two circuit units may be arranged so as to face each other with the display unit 11 interposed therebetween so as to be connected to both ends of the wiring SLR or the like, respectively.

[0054] The circuit unit 13 functions as a gate line driving circuit (also referred to as a gate driver). The circuit unit 13 supplies a selection signal (also referred to as a scanning signal, a gate signal, etc.) to the wiring GL. The circuit unit 14 has a function of generating signals for supplying to the light-receiving pixel 22 and outputting them to the wiring TX, the wiring RS, and the wiring SE, respectively. In particular, the signal applied to the wiring SE can be called a selection signal. Note that, although the circuit unit 13 and the circuit unit 14 are separately shown here, these functions may be configured by one circuit unit.

[0055] 〔Configuration Example 1-1 of Pixel〕 FIG. 1B shows an example of a circuit diagram of the pixel 20. FIG. 1B shows a circuit diagram including the pixel 21R, the pixel 21G, and the light-receiving pixel 22. Note that the pixel 21B is omitted because it can have the same configuration as the pixel 21G except for the points where the light-emitting element is different and the point where the wiring SLB is electrically connected.

[0056] The pixel 21R has a transistor M1, a transistor M2, a transistor M3, a capacitor C1, and a light-emitting element ELR.

[0057] Transistor M1 has its gate electrically connected to wiring GL, one of its source and drain electrically connected to wiring SLR, and the other electrically connected to the gate of transistor M2 and one electrode of capacitor C1. One of the source and drain of transistor M2 is electrically connected to the anode of light-emitting element ELR, the other electrode of capacitor C1, and one of the source and drain of transistor M3, and the other is electrically connected to wiring AL. The gate of transistor M3 is electrically connected to wiring GL, and the other of its source and drain is electrically connected to wiring V0. The cathode of light-emitting element ELR is electrically connected to wiring CL.

[0058] An anode potential is applied to wiring AL, and a cathode potential is applied to wiring CL. Here, the anode potential is set to a potential higher than the cathode potential. Further, a ground potential, a common potential, or an arbitrary potential is applied to wiring V0. For example, it is preferable to apply a positive potential to wiring V0 that is higher than the cathode potential and lower than the anode potential.

[0059] Here, an example where the anode of light-emitting element ELR is electrically connected to one of the source and drain of transistor M2 is shown. However, the anode and cathode of light-emitting element ELR may be inverted, and a configuration may be adopted in which the cathode is electrically connected to one of the source and drain of transistor M2. At this time, a configuration may be adopted in which the cathode potential is applied to wiring AL and the anode potential is applied to wiring CL.

[0060] A selection signal for controlling the conduction and non-conduction of transistor M1 and transistor M3 is applied to wiring GL. When a high-level potential is applied to wiring GL, transistor M1 and transistor M3 are in a conductive state, and when a low-level potential is applied, they are in a non-conductive state. Image data including a potential (data potential) to be written to pixel 21R is applied to wiring SLR.

[0061] When transistors M1 and M3 are in the conductive state, a data potential is applied from wiring SLR to the gate of transistor M2 via transistor M1, and a voltage corresponding to the potential difference between wiring V0 and wiring SLR is charged to capacitor C1. Subsequently, by setting transistors M1 and M3 to the non-conductive state, the gate potential of transistor M2 is held. At this time, a current corresponding to the gate potential of transistor M2 flows through light-emitting element ELR, and light-emitting element ELR emits light with a luminance corresponding to the magnitude of the current.

[0062] Pixel 21G differs from pixel 21R in that light-emitting element ELR is replaced with light-emitting element ELG and wiring SLR is replaced with wiring SLG. Since the rest is the same as pixel 21R, the detailed description can refer to the above description.

[0063] Light-receiving pixel 22 includes transistors M11, M12, M13, M14, capacitor C2, and light-receiving element PD.

[0064] The gate of transistor M11 is electrically connected to wiring TX, one of the source and drain is electrically connected to the anode of light-receiving element PD, and the other is electrically connected to one of the source and drain of transistor M12, the gate of transistor M13, and one electrode of capacitor C2. The gate of transistor M12 is electrically connected to wiring RS, and the other of the source and drain is electrically connected to wiring VRS. The other electrode of capacitor C2 is electrically connected to wiring VCP. One of the source and drain of transistor M13 is electrically connected to one of the source and drain of transistor M14, and the other is electrically connected to wiring VPI. The gate of transistor M14 is electrically connected to wiring SE, and the other of the source and drain is electrically connected to wiring SLR.

[0065] The wiring CL to which the cathode of the light-receiving element PD is electrically connected is preferably common with the wiring CL to which the cathodes of the light-emitting elements ELR, ELG, ELB (not shown), etc. are electrically connected. Thereby, the types of power supply potentials can be reduced, and a power supply circuit or the like can be omitted.

[0066] A fixed potential is applied to the wiring VCP. A fixed potential is applied to the wiring VRS as a reset potential. The reset potential applied to the wiring VRS is preferably a potential lower than the cathode potential. A fixed potential for reading is applied to the wiring VPI. The potential applied to the wiring VPI may be appropriately determined according to the configuration of the read circuit electrically connected to the wiring SLR. For example, it can be a potential higher than the cathode potential.

[0067] Here, an example in which the anode of the light-receiving element PD is electrically connected to one of the source and drain of the transistor M11 is shown, but a configuration in which the cathode is electrically connected to the transistor M11 may also be used. In that case, the reset potential applied to the wiring VRS can be a potential higher than the potential applied to the wiring CL.

[0068] To the wiring RS, a potential for controlling conduction and non - conduction of the transistor M12 is applied as a reset signal. To the wiring TX, a potential for controlling conduction and non - conduction of the transistor M11 is applied as a transfer signal. To the wiring SE, a potential for controlling conduction and non - conduction of the transistor M14 is applied as a selection signal. The transistor M11 has a function of transferring the charge (carrier) accumulated at the anode of the light - receiving element PD to the node to which the gate of the transistor M13 is connected, and can also be called a transfer transistor. The transistor M12 has a function of resetting the potential of the node to which the gate of the transistor M13 is connected to the potential applied to the wiring VRS, and can also be called a reset transistor. The transistor M14 functions as a switch for controlling conduction and non - conduction between the transistor M13 and the wiring SLR. When the transistor M14 is in the conductive state, a current corresponding to the gate potential of the transistor M13 flows through the wiring SLR, and thus the received light data can be output. Therefore, the transistor M14 can also be called a read - out transistor.

[0069] In FIGS. 1A and 1B, an example where the light - receiving pixel 22 is electrically connected to the wiring SLR is shown, but it may be configured to be electrically connected to the wiring SLG or the wiring SLB.

[0070] 〔Configuration Example 1 - 1 of the Display Unit〕 FIG. 2 shows a partial configuration example of the display unit. In the display unit, pixels 20 of M rows and N columns (M and N are each independently integers of 2 or more) are arranged. In FIG. 2, eight pixels 20 for four rows and two columns are shown. Specifically, eight pixels from the pixel 20[i,j] at the i - th row and j - th column (i is an integer from 1 to M - 3, j is an integer from 1 to N - 1) to the pixel 20[i + 3,j + 1] at the (i + 3)-th row and (j + 1)-th column are shown.

[0071] In this specification and the drawings, in order to distinguish a plurality of components such as the pixel 20 and the wiring, corresponding to the i - th row (i - th), j - th column (j - th), i - th row and j - th column, etc., [i], [j], [i,j], etc. are added after the reference numerals for notation.

[0072] Pixel 20[i,j] has pixel 21R[i,j], pixel 21G[i,j], pixel 21B[i,j], and light-receiving pixel 22[i,j]. Pixel 21R[i,j] has wiring GL[i] and wiring SLR[j] electrically connected thereto. Pixel 21G[i,j] has wiring GL[i] and wiring SLG[j] electrically connected thereto. Pixel 21B[i,j] has wiring GL[i] and wiring SLB[j] electrically connected thereto.

[0073] Here, wiring TX[i], wiring RS[i], and wiring SE[i] are electrically connected to light-receiving pixel 22[i,j] located in the i-th row, light-receiving pixel 22[i + 1,j] located in the (i + 1)-th row, and light-receiving pixel 22[i + 2,j] located in the (i + 2)-th row, respectively. That is, signals are respectively given from the same wiring TX, wiring RS, and wiring SE to three adjacent light-receiving pixels 22 in the column direction.

[0074] Furthermore, light-receiving pixel 22[i,j] in the i-th row is electrically connected to wiring SLR[j], light-receiving pixel 22[i + 1,j] in the (i + 1)-th row is electrically connected to wiring SLG[j], and light-receiving pixel 22[i + 2,j] in the (i + 2)-th row is electrically connected to wiring SLB[j].

[0075] Light-receiving pixels 22 after the (i + 3)-th row are similarly electrically connected in the order of SLR[j], SLG[j], and SLB[j], respectively. Also, the same wiring TX, wiring RS, and wiring SE are electrically connected to light-receiving pixels 22 every three rows, respectively.

[0076] With such a configuration, light-receiving data can be read out simultaneously from three rows of light-receiving pixels 22. Specifically, by a selection signal given to wiring SE[i], light-receiving data is output from light-receiving pixel 22[i,j] in the i-th row to wiring SLR[j], light-receiving data is output from light-receiving pixel 22[i + 1,j] in the (i + 1)-th row to wiring SLG[j], and light-receiving data is output from light-receiving pixel 22[i + 2,j] in the (i + 2)-th row to wiring SLB[j]. Thereby, a high-speed read operation can be realized.

[0077] In addition, compared with a configuration that reads line by line, the number of wirings TX, RS, and SE can be reduced to one-third. As a result, a high-definition display device can be realized. In addition, the configuration of the drive circuit (for example, circuit unit 14) can be simplified.

[0078] [Configuration example of circuit unit 12] Hereinafter, a configuration example of circuit unit 12 having both the function of a source driver and the function of a readout circuit will be described.

[0079] FIG. 3 shows a partial circuit diagram of circuit unit 12. Circuit unit 12 includes circuit units 41, 42, and 43. Wiring SLR, SLG, and SLB are electrically connected to circuit unit 12. In FIG. 3, as an example, wiring SLR[j], SLG[j], SLB[j], and SLR[j + 1] are shown explicitly.

[0080] Circuit unit 42 functions as a source driver (source line drive circuit, signal line drive circuit) and can output image data to wirings such as SLR.

[0081] Circuit unit 43 functions as a readout circuit and can convert received light data input from wirings such as SLR into a digital signal and output it.

[0082] Circuit unit 41 functions as a selector circuit and has a plurality of switches SW1. Circuit unit 41 selects either to electrically connect wirings such as SLR to circuit unit 42 or to electrically connect wirings such as SLR to circuit unit 43 by switch SW1.

[0083] Circuit unit 42 has a plurality of conversion circuits DAC each functioning as a digital-analog conversion circuit and amplifier circuits AMP. The output terminal of conversion circuit DAC is electrically connected to the input terminal of amplifier circuit AMP via a wiring, and the output terminal of amplifier circuit AMP is electrically connected to one switch SW1 that circuit unit 42 has. Conversion circuit DAC receives video signal S which is a digital signal R , video signal SG or a video signal S B etc. are input, and it has a function of converting them into a signal (corresponding to image data) that is an analog signal and outputting it.

[0084] The circuit section 43 includes a plurality of CDS circuits CDS, amplifier circuits PA, and conversion circuits ADC, respectively. The input terminal of the conversion circuit ADC is electrically connected to the output terminal of the amplifier circuit PA via a wiring, the input terminal of the amplifier circuit PA is electrically connected to the output terminal of the CDS circuit CDS, and the input terminal of the CDS circuit is electrically connected to one switch SW1 included in the circuit section 42 via a wiring. The CDS circuit CDS is a circuit capable of performing correlated double sampling. The amplifier circuit PA is a circuit that amplifies the output signal of the CDS circuit CDS and outputs it to the conversion circuit ADC. The conversion circuit ADC has a function of converting a signal (corresponding to received light data) that is an analog signal input via a wiring SLR etc. into an output signal S that is a digital signal and outputting it. OUT and outputting it.

[0085] The circuit section 41 selects (controls) the conduction between either one of the wiring to which the output terminal of the amplifier circuit AMP included in the circuit section 42 is connected or the wiring to which the input terminal of the CDS circuit CDS included in the circuit section 43 is connected, and the wiring SLR (wiring SLG, wiring SLB). For example, during the operation of writing image data to the pixel 20, the wiring SLR etc. and the output terminal of the amplifier circuit AMP of the circuit section 42 are made conductive. On the other hand, during the operation of reading the received light data from the light-receiving pixel 22, the wiring SLR etc. and the input terminal of the CDS circuit CDS of the circuit section 43 are made conductive.

[0086] FIG. 4 shows an example of a circuit section 12 whose partial configuration is different from the above. The circuit section 12 illustrated in FIG. 4 is mainly different in that the configuration of the circuit section 43 is different.

[0087] The circuit section 43 shown in FIG. 4 is provided with one amplification circuit PA and one conversion circuit ADC for each of 3(k - j) wirings from the wiring SLR[j] in the j-th column to the wiring SLB[k] in the k-th column (where k is an integer greater than or equal to 2 and less than or equal to M and greater than j). Also, each of the wirings such as SLR is electrically connected to the input terminal of the CDS circuit CDS via the switch SW1 and a wiring. The output terminal of the CDS circuit CDS is electrically connected to the input terminal of the holding circuit HLD. The output terminal of the holding circuit HLD is electrically connected to the input terminal of the amplification circuit PA via the switch SW2.

[0088] Also, for the wirings such as SLR after the (k + 1)-th column and before the (j - 1)-th column (not shown), the same configuration as above can be adopted.

[0089] The holding circuit HLD has a function of holding the analog data input from the CDS circuit CDS. When the switch SW2 is in the conductive state, the analog data held in the holding circuit HLD is output to the amplification circuit PA.

[0090] Among the plurality of switches SW2, when one is in the conductive state, all the others are controlled to be in the non-conductive state. Also, the plurality of switches SW2 are controlled to be in the conductive state sequentially.

[0091] The circuit section 43 can sequentially read out the received light data input from a plurality of wirings such as SLR in the same period and output it as a serial digital signal. In FIG. 4, an example is shown in which 3(k - j) signals from the signal S OUT [i, j] to the signal S OUT [i + 2, k] are sequentially output.

[0092] With such a configuration, the number of the conversion circuit ADC and the amplification circuit PA can be significantly reduced. In particular, since the conversion circuit ADC has a relatively large circuit scale, reducing its number can significantly reduce the occupied area of the circuit section 12.

[0093] FIG. 5 shows an example of a circuit section 12 that has a configuration partially different from the above.

[0094] The circuit section 41 has a plurality of switches SW3. For example, the switch SW3 located in the j-th column can connect any one of the wirings SLR[j], SLG[j], and SLB[j] to any one of the four terminals. One of the four terminals electrically connected to the switch SW3 is electrically connected to the output terminal of the amplifier circuit AMP of the circuit section 42. The other three are electrically connected to the input terminals of the CDS circuits CDS of the circuit section 43, respectively. Each CDS circuit CDS is electrically connected to the amplifier circuit PA and the conversion circuit ADC via the holding circuit HLD and the switch SW2, similar to FIG. 4.

[0095] That is, in the example shown in FIG. 5, for each of the three wirings (wiring SLR, wiring SLG, and wiring SLB), one amplifier circuit AMP, one conversion circuit DAC, one amplifier circuit PA, and one conversion circuit ADC are provided.

[0096] Here, an example where three wirings (such as wiring SLR) are connected to the switch SW3 is shown, but a configuration where four or more wirings are connected may also be used.

[0097] With such a configuration, the number of the amplifier circuit AMP, the conversion circuit DAC, the amplifier circuit PA, and the conversion circuit ADC can be reduced. In particular, similar to the conversion circuit ADC, the conversion circuit DAC also has a relatively large circuit scale. Therefore, by reducing the number of these circuits, the occupied area of the circuit section 12 can be significantly reduced.

[0098] [Configuration Example 2 of Display Device] Hereinafter, a configuration example of a display device when a light-emitting and receiving element is applied will be described.

[0099] In the following description, components that are common to the above may be given the same reference numerals, and detailed descriptions thereof may be omitted. In particular, unless otherwise specified, the descriptions given above may be applied to components given the same reference numerals as those above. Also, unless otherwise specified, the descriptions of components given the same reference numerals as those above may be applied to the components exemplified above.

[0100] A light-emitting and light-receiving element (also referred to as a light-emitting and light-receiving device) is an element having a function as a light-emitting element (also referred to as a light-emitting device) that emits light of a first color and a function as a photoelectric conversion element (also referred to as a photoelectric conversion device) that receives light of a second color. The light-emitting and light-receiving element can also be referred to as a multifunctional element, a multifunctional diode, a light-emitting photodiode, or a bidirectional photodiode, etc.

[0101] By arranging a plurality of sub-pixels each having a light-emitting and light-receiving element in a matrix, the display device can have both a function of displaying an image and a function of imaging. Therefore, the display device can also be referred to as a composite device or a multifunctional device.

[0102] 〔Configuration Example 2-1〕 FIG. 6A shows a circuit diagram for explaining the configuration of the display device 10A. The display device 10A is mainly different from the display device 10 exemplified in FIG. 1A in that the configuration of the pixel 20 is different.

[0103] The pixel 20 has pixel 30R, pixel 21G, and pixel 21B that each function as a sub-pixel. The pixel 30R has a light-emitting and light-receiving element. The pixel 21G and the pixel 21B each have a light-emitting element.

[0104] For example, pixel 30R has a light-emitting and light-receiving element that emits red light and receives light of one or both of green and blue. Further, pixel 21G has a light-emitting element that emits green light, and pixel 21B has a light-emitting element that emits blue light. Thereby, a full-color image can be displayed on display unit 11. Also, when imaging is performed using the light-emitting and light-receiving element, since the light from the light-emitting element included in pixel 21G or pixel 21B can be used as a light source, it is preferable because there is no need to separately provide a light source for imaging.

[0105] Wiring GL, wiring SLR, wiring TX, wiring RS, and wiring SE are electrically connected to pixel 30R.

[0106] Here, an example in which pixel 21R and light-receiving pixel 22 of display device 10 are replaced with one pixel 30R has been shown, but the present invention is not limited thereto. For example, pixel 21G or pixel 21B and light-receiving pixel 22 may be replaced with a pixel having a light-emitting and light-receiving element.

[0107] 〔Example Configuration of Pixel 2-1〕 FIG. 6B shows an example of a circuit diagram of pixel 30R. Note that since the above description can be applied to pixel 21G and pixel 21B, they are omitted.

[0108] Pixel 30R includes circuit 31R, circuit 32, and light-emitting and light-receiving element MER. Circuit 31R includes transistors M1 to M3, transistor M10, and capacitor C1. Circuit 32 includes transistors M11 to M14 and capacitor C2.

[0109] When light-emitting and light-receiving element MER is used as a light-emitting element, circuit 31R functions as a circuit that controls the light emission of light-emitting and light-receiving element MER. Circuit 31R has a function of controlling the current flowing through light-emitting and light-receiving element MER according to the value of the data potential supplied from wiring SLR.

[0110] When the transceiver element MER is used as a light-receiving element, circuit 32 functions as a sensor circuit that controls the operation of the transceiver element MER. Circuit 32 has functions such as applying a reverse bias voltage to the transceiver element MER, controlling the exposure period of the transceiver element MER, holding a potential based on the charge transferred from the transceiver element MER, and outputting a signal (received light data) based on the potential to wiring SLR.

[0111] For transistor M1, its gate is electrically connected to wiring GL, one of its source and drain is electrically connected to wiring SLR, and the other is electrically connected to the gate of transistor M2 and one electrode of capacitor C1. For transistor M2, one of its source and drain is electrically connected to one of the source and drain of transistor M10, the other electrode of capacitor C1, and one of the source and drain of transistor M3, and the other is electrically connected to wiring AL. For transistor M3, its gate is electrically connected to wiring GL, and the other of its source and drain is electrically connected to wiring V0. For transistor M10, its gate is electrically connected to wiring REN, and the other of its source and drain is electrically connected to the anode of the transceiver element MER.

[0112] For the transceiver element MER, its cathode is electrically connected to wiring CL.

[0113] A fixed potential is applied to wiring V0. An anode potential is applied to wiring AL. A cathode potential is applied to wiring CL. In the configuration shown in FIG. 6B, the anode potential is set to be higher than the cathode potential. A signal for controlling the conduction and non-conduction of transistor M10 is applied to wiring REN.

[0114] Transistor M11 has a gate electrically connected to wiring TX, one of its source and drain electrically connected to the anode of light-emitting and receiving element MER, and the other electrically connected to one of the source and drain of transistor M12, the gate of transistor M13, and one electrode of capacitor C2. The gate of transistor M12 is electrically connected to wiring RS, and the other of its source and drain is electrically connected to wiring VRS. The other electrode of capacitor C2 is electrically connected to wiring VCP. One of the source and drain of transistor M13 is electrically connected to one of the source and drain of transistor M14, and the other is electrically connected to wiring VPI. The gate of transistor M14 is electrically connected to wiring SE, and the other of its source and drain is electrically connected to wiring SLR.

[0115] Transistors M1, M3, M10, M11, M12, and M14 function as switches. The conduction states of transistors M2 and M13 change according to the potential of the node to which their gates are connected. Transistor M2 can also be called a driving transistor, and transistor M13 can also be called a reading transistor.

[0116] Here, it is preferable to apply a transistor with an extremely small leakage current in the non-conducting state to the transistors that function as switches described above. In particular, a transistor using an oxide semiconductor for the semiconductor layer in which the channel is formed can be preferably used. Also, by applying a transistor using an oxide semiconductor to transistors M2 and M13, all the transistors can be formed through a common manufacturing process, which is preferable. Note that for transistors M2 and M13, silicon (including amorphous silicon, polycrystalline silicon, and single-crystalline silicon) may be applied to the semiconductor layer in which the channel is formed. Note that this is not limiting, and transistors using silicon can also be used for some or all of the transistors. Also, for some or all of the transistors, transistors using inorganic semiconductors, compound semiconductors, organic semiconductors, etc. other than silicon may be used.

[0117] Here, the transistor M10 has a function of controlling the conduction and non-conduction between the transistor M2 and the light-emitting and receiving element MER. For example, during the period when the light-emitting and receiving element MER is used as a light-receiving element, the transistor M10 can be set to a non-conductive state. On the other hand, when the light-emitting and receiving element MER is used as a light-emitting element, the transistor M10 can be set to a conductive state. In this way, by providing the transistor M10 that functions as a switch between the transistor M2 and the light-emitting and receiving element MER, a period can be provided to electrically disconnect the circuit 31R and the light-emitting and receiving element MER.

[0118] More specifically, during the data writing period to the circuit 31R, and the holding and light-emitting periods, by setting the transistor M10 to a conductive state, the light-emitting and receiving element MER and the circuit 31R can be electrically connected. At this time, by setting the transistor M11 to a non-conductive state, the light-emitting and receiving element MER and the circuit 32 can be electrically disconnected.

[0119] On the other hand, during the reset period, exposure period, holding period, and readout period in the circuit 32, the transistor M10 is set to a non-conductive state. Thereby, the light-emitting and receiving element MER and the circuit 31R can be electrically disconnected. At this time, even when data is held in the circuit 31R, it is possible to prevent current from flowing through the transistor M2 to the light-emitting and receiving element MER and causing light emission.

[0120] 〔Configuration Example 2-2 of Pixel〕 Hereinafter, a configuration example of a pixel with a partially different configuration from the above will be described.

[0121] FIG. 7 shows the pixel 30R and the pixel 21G. In the pixel 30R shown in FIG. 7, the circuit 31R is electrically connected to the wiring SLR, and the circuit 32 is electrically connected to the wiring SLG. The pixel 30R shown in FIG. 7 is mainly different in that the connection of the transistor M14 is different as compared with FIG. 6B. The pixel 21G has the same configuration as FIG. 1B.

[0122] In circuit 32, the other of the source and drain of transistor M14 is electrically connected to wiring SLG.

[0123] Pixel 30R can receive image data input from wiring SLR and output received light data to wiring SLG.

[0124] Here, an example of outputting received light data to wiring SLG has been shown. However, when outputting received light data to wiring SLB, the same configuration can be adopted. Specifically, the other of the source and drain of transistor M14 may be electrically connected to wiring SLB.

[0125] 〔Configuration Example 2-1 of Display Unit〕 FIG. 8 shows a partial configuration example of a display unit to which the above pixel 30R is applied. FIG. 8 is an example in which pixel 21R and light-receiving pixel 22 in FIG. 2 are replaced with pixel 30R.

[0126] Pixels 30R[i,j] and 30R[i,j + 1] in the i-th row can output received light data to wirings SLR[j] and SLR[j + 1], respectively. Pixels 30R[i + 1,j] and 30R[i + 1,j + 1] in the (i + 1)-th row can output received light data to wirings SLG[j] and SLG[j + 1], respectively. Pixels 30R[i + 2,j] and 30R[i + 2,j + 1] in the (i + 2)-th row can output received light data to wirings SLB[j] and SLB[j + 1], respectively.

[0127] As shown in FIG. 8, wirings TX[i], RS[i], and SE[i] are electrically connected to a plurality of pixels 30R provided in the i-th row, (i + 1)-th row, and (i + 2)-th row, respectively. Thereby, received light data for three rows, namely the i-th row, (i + 1)-th row, and (i + 2)-th row, can be output to wirings SLR, SLG, and SLB simultaneously.

[0128] The configuration example of the above circuit unit 12 and the configurations exemplified in FIGS. 3 and 4 can be applied to circuit unit 12 connected to wirings SLR, SLG, and SLB.

[0129] [Configuration Example 3 of the Display Device] Hereinafter, an example of a display device including a plurality of light receiving elements or a plurality of light emitting and receiving elements in one pixel will be described.

[0130] [Configuration Example 3-1] FIG. 9A shows a circuit diagram for explaining the configuration of the display device 10B. The display device 10B is mainly different in that the configuration of the pixel 20 is different as compared with the display device 10 illustrated in FIG. 1A.

[0131] The pixel 20 includes pixel 21R, pixel 21G, and pixel 21B each having a light emitting element, and light receiving pixel 22R, light receiving pixel 22G, and light receiving pixel 22B each having a light receiving element.

[0132] The light receiving pixel 22R, the light receiving pixel 22G, and the light receiving pixel 22B each have a light receiving element that receives light of a different color. For example, the light receiving pixel 22R has a light receiving element that receives red light, the light receiving pixel 22G has a light receiving element that receives green light, and the light receiving pixel 22B has a light receiving element that receives blue light. Note that the display device 10B may have a pixel including a light receiving element that receives visible light, infrared light, or ultraviolet light of a color other than the above, in place of or in addition to any of the above pixels.

[0133] The light receiving elements included in the light receiving pixel 22R, the light receiving pixel 22G, and the light receiving pixel 22B may each be a photoelectric conversion element including a different material. Alternatively, a combination of a photoelectric conversion element including the same material and a color filter that transmits light of different wavelengths may be used as a light receiving element that receives light of different colors.

[0134] The light receiving pixel 22R can output received data to the wiring SLR. The light receiving pixel 22G can output received data to the wiring SLG. The light receiving pixel 22B can output received data to the wiring SLB. Further, the light receiving pixel 22R, the light receiving pixel 22G, and the light receiving pixel 22B are each electrically connected to the wiring TX, the wiring RS, and the wiring SE.

[0135] 〔Configuration Example 3-1 of Pixel〕 FIG. 9B shows an example of a circuit diagram of a part of the pixel 20. In FIG. 9B, circuit diagrams of pixel 21R, pixel 21G, light-receiving pixel 22R, and light-receiving pixel 22G are shown. Note that pixel 21B can have the same configuration as pixel 21R and pixel 21G except for the points where the light-emitting element is different and the point where the wiring SLB is connected. Also, light-receiving pixel 22B can have the same configuration as light-receiving pixel 22R and light-receiving pixel 22G except for the points where the light-receiving element is different and the point where the wiring SLB is connected.

[0136] In FIG. 9B, the configurations of pixel 21R and pixel 21G can be applied to the pixel 21R and pixel 21G illustrated in FIG. 1B. The light-emitting element ELR included in pixel 21R is, for example, a light-emitting element that emits red light. The light-emitting element ELG included in pixel 21G is, for example, a light-emitting element that emits green light.

[0137] The configurations of light-receiving pixel 22R and light-receiving pixel 22G can be applied to the configuration of light-receiving pixel 22 illustrated in FIG. 1B, respectively. The light-receiving element PDR included in light-receiving pixel 22R is, for example, a photoelectric conversion element that receives red light. The light-receiving element PDG included in light-receiving pixel 22G is, for example, a photoelectric conversion element that receives green light.

[0138] One of the source and drain of the transistor M14 included in light-receiving pixel 22R is electrically connected to the wiring SLR. Also, one of the source and drain of the transistor M14 included in light-receiving pixel 22G is electrically connected to the wiring SLG.

[0139] 〔Configuration Example 3-1 of Display Unit〕 FIG. 10 shows a partial configuration example of a display unit to which the light-receiving pixel 22R, the light-receiving pixel 22G, and the light-receiving pixel 22B are applied. FIG. 10 shows 2×2 pixels 20.

[0140] The light-receiving pixels 22R[i, j] and 22R[i, j + 1] in the i-th row can output the received light data to the wirings SLR[j] and SLR[j + 1], respectively. The light-receiving pixels 22G[i, j] and 22G[i, j + 1] in the i-th row can output the received light data to the wirings SLG[j] and SLG[j + 1], respectively. The light-receiving pixels 22B[i, j] and 22B[i, j + 1] in the i-th row can output the received light data to the wirings SLB[j] and SLB[j + 1], respectively.

[0141] Also, the wiring TX[i], the wiring RS[i], and the wiring SE[i] are electrically connected to each of the plurality of light-receiving pixels 22R, the light-receiving pixels 22G, and the light-receiving pixels 22B provided in the i-th row, respectively. Thereby, the received light data of all the light-receiving pixels 22R, the light-receiving pixels 22G, and the light-receiving pixels 22B arranged in the i-th row can be output simultaneously.

[0142] In the example shown in FIG. 10, the received light data is read out row by row. However, since three light-receiving elements are provided in one pixel 20, compared with the case where one pixel has one light-receiving element, three times as much data can be read out simultaneously.

[0143] 〔Configuration Example 3-2〕 FIG. 11A shows a circuit diagram for explaining the configuration of the display device 10C. The display device 10C mainly differs from the display device 10B illustrated in FIG. 9A in that the configuration of the pixel 20 is different.

[0144] Specifically, the display device 10C has a pixel 30R in place of the pixel 21R and the light-receiving pixel 22R in the display device 10B, a pixel 30G in place of the pixel 21G and the light-receiving pixel 22G, and a pixel 30R in place of the pixel 21B and the light-receiving pixel 22B, respectively.

[0145] Pixel 30R, pixel 30G, and pixel 30B each have a light emitting and receiving element. Each light emitting and receiving element receives light of a different color and emits light of a different color. As the specific configuration of pixel 30R, the configurations illustrated in FIGS. 6A and 6B can be adopted. Also, since pixel 30G and pixel 30B can have a configuration in which the light emitting and receiving element of pixel 30R is replaced, detailed description thereof is omitted.

[0146] The light emitting and receiving elements included in light receiving pixel 22R, light receiving pixel 22G, and light receiving pixel 22B can be elements containing different materials, respectively.

[0147] Also, it is preferable that the color (wavelength range) of the light emitted by one light emitting and receiving element does not overlap with the color (wavelength range) of the light received. Thereby, it is possible to suppress the light emitted by the light emitting and receiving element from being absorbed (received) by the light emitting and receiving element itself, and the light emission efficiency can be enhanced.

[0148] For example, the light emitting and receiving element provided in light receiving pixel 22R is preferably an element that emits red light and receives one or both of green light and blue light. Also, the light emitting and receiving element provided in light receiving pixel 22G is preferably an element that emits green light and receives one or both of red light and blue light. Also, the light emitting and receiving element provided in light receiving pixel 22B is preferably an element that emits blue light and receives one or both of red light and green light. Note that each light emitting and receiving element is not limited to visible light, and may be an element that emits infrared light or ultraviolet light, or may be an element that receives infrared light or ultraviolet light.

[0149] Pixel 30R, Pixel 30G, and Pixel 30B are each given a selection signal when writing image data from wiring GL, and each is given a selection signal when outputting received light data from wiring SE. Pixel 30R has image data input from wiring SLR and can output received light data to wiring SLR. Pixel 30G has image data input from wiring SLG and can output received light data to wiring SLG. Pixel 30B has image data input from wiring SLB and can output received light data to wiring SLB.

[0150] 〔Configuration Example 3-2 of Display Unit〕 FIG. 11B shows an example of a display unit to which the above Pixel 30R, Pixel 30G, and Pixel 30B are applied. FIG. 11B shows 2×2 pixels 20.

[0151] For the Pixel 30R[i,j] and Pixel 30R[i,j + 1] in the i-th row, image data is input from wiring SLR[j] and wiring SLR[j + 1] respectively, and received light data can be output to the corresponding wiring. For the Pixel 30G[i,j] and Pixel 30G[i,j + 1] in the i-th row, image data is input from wiring SLG[j] and wiring SLG[j + 1] respectively, and received light data can be output to the corresponding wiring. For the Pixel 30B[i,j] and Pixel 30B[i,j + 1] in the i-th row, image data is input from wiring SLB[j] and wiring SLB[j + 1] respectively, and received light data can be output to the corresponding wiring.

[0152] Also, wiring TX[i], wiring RS[i], and wiring SE[i] are each electrically connected to each of the plurality of Pixel 30R, Pixel 30G, and Pixel 30B provided in the i-th row. Thereby, the received light data of all the Pixel 30R, Pixel 30G, and Pixel 30B arranged in the i-th row can be output simultaneously.

[0153] In the example shown in FIG. 11B, although the light reception data is read out row by row, since three light emitting and receiving elements are provided for each pixel 20, three times as much data can be read out simultaneously compared to the case where each pixel has one light emitting and receiving element.

[0154] Note that, as shown in FIG. 12, the wiring for supplying image data to the pixels 30R, 30G, and 30B and the wiring for outputting the light reception data may be different.

[0155] In FIG. 12, for the pixel 30R[i,j], image data is supplied from the wiring SLR[j], and the light reception data can be output to the wiring SLG[j]. For the pixel 30G[i,j], image data is supplied from the wiring SLG[j], and the light reception data can be output to the wiring SLB[j]. For the pixel 30B[i,j], image data is supplied from the wiring SLB[j], and the light reception data can be output to the wiring SLR[j + 1].

[0156] With such a configuration, it becomes possible to simultaneously execute writing of image data to the pixel 30R and reading of the light reception data. For example, for the pixels 30 in odd columns, writing of image data and reading of the light reception data can be executed during the same period, and subsequently, for the pixels 30 in even columns, writing and reading can be executed in the same manner.

[0157] [Example of driving method] Hereinafter, an example of a driving method of the display device will be described. Here, as an example, a driving method of a display device to which the light emitting and receiving element is applied and which can read out data for three rows simultaneously, as exemplified in the above Configuration Example 2, will be described.

[0158] Hereinafter, as the display device, a display device having a configuration in which a plurality of pixels are arranged in a matrix in M rows and N columns (M and N are each independently an integer of 2 or more) in the display unit will be used.

[0159] Figures 13 and 14 schematically show the operation of the display device. The operation of the display device is roughly divided into a period (display period) in which an image is displayed using a light-emitting element or a light-emitting and receiving element, and a period (imaging period) in which imaging is performed using a light-emitting and receiving element (also referred to as a sensor). The display period is a period in which image data is written to a pixel and display based on the image data is performed. The imaging period is a period in which imaging by a light-receiving element or a light-emitting and receiving element and reading of light-receiving data are performed.

[0160] First, the operation in the display period will be described with reference to FIG. 13.

[0161] In the display period, the operation of writing image data to the pixel is repeatedly performed. During that period, it is assumed that the operation of the sensor is not performed (denoted as blank). Note that imaging operation can also be performed during the display period.

[0162] FIG. 12 shows a timing chart of the writing operation of the data in the i-th row, the (i + 1)-th row, and the (i + 2)-th row. Here, the potential transitions in the wirings GL[i], GL[i + 1], GL[i + 2], REN, SLR[j], SLG[j], and SLB[j] are shown. Regarding the connection relationship between each wiring and each pixel, the above Configuration Example 2 can be referred to.

[0163] In the writing period (write[i]) of the i-th row, the wiring GL[i] is set to a high-level potential, and the other wirings GL are set to a low-level potential. Also, the image data D R [i, j] is given to the wiring SLR[j], the image data D G [i, j] is given to the wiring SLG[j], and the image data D B [i, j] is given to the wiring SLB[j], respectively. Also, a high-level potential is given to the wiring REN during the writing period.

[0164] The writing of the (i + 1)-th row and subsequent rows can be performed in the same manner as above by setting the corresponding wiring GL to a high-level potential and giving image data to the wirings SLR, SLG, and SLB, respectively.

[0165] By performing such a writing operation from the first line to the M-th line, the data writing for one frame is completed. During the display period, by repeatedly executing the above operation, a moving image can be displayed.

[0166] Subsequently, with reference to FIG. 14, the operation during the imaging period will be described. Here, the case of performing the imaging operation in the global shutter method will be described. Note that the present invention is not limited to the global shutter method, and the driving method of the rolling shutter method can also be applied.

[0167] The imaging period is divided into a period in which imaging is performed simultaneously for each pixel (referred to as imaging. Hereinafter, in order to distinguish it from the imaging period, it is also referred to as the imaging operation period), and a period in which the received light data is sequentially read out (referred to as readout). The imaging operation period is divided into an initialization period, an exposure period, and a transfer period. Here, during the readout period, the received light data is read out every three lines from the first line to the M-th line.

[0168] Here, it is assumed that M is a multiple of 3 for explanation. That is, the wiring TX, the wiring SE, and the wiring RS are arranged at a rate of one per three lines, and M / 3 lines are provided for each in the display device. Note that M does not necessarily have to be a multiple of 3. In that case, one or more periods in which the received light data of two lines is read out simultaneously or the received light data of one line is read out may be provided during the imaging period.

[0169] FIG. 14 shows a timing chart during the imaging operation period and the readout period. Here, the potential transitions of the wiring TX, the wiring RS, the wiring SE[i], the wiring SE[i + 3], the wiring SLR[j], the wiring SLG[j], the wiring SLB[j], the wiring REN, and the wiring GL[1:M] are shown. Here, for the wiring TX and the wiring RS, all (M / 3 lines) from the first line to the M - 2-th line are collectively referred to as the wiring TX and the wiring RS. Also, for the wiring GL, the M lines from the first line to the M-th line are collectively referred to as the wiring GL[1:M].

[0170] During the initialization period, by setting the wiring TX and the wiring RS to a high level potential, the transistors M11 and M12 are turned on, and a predetermined potential is applied from the wiring VRS to the node to which the gate of the transistor M13 is connected and the anode of the light emitting and receiving element MER. As a result, the reset operation of all pixels is performed (see FIG. 6B etc.).

[0171] Subsequently, during the exposure period, the wiring TX and the wiring RS are set to a low level potential. When the light emitting and receiving element MER receives light during this period, charges are accumulated at the anode.

[0172] Subsequently, during the transfer period, the wiring TX is set to a high level potential. Thereby, the charges accumulated in the light emitting and receiving element MER can be transferred to the node to which the gate of the transistor M13 is connected. Then, by setting the wiring TX to a low level potential, the potential of the node is maintained.

[0173] Subsequently, the received light data is read out every three rows. During the readout period, by sequentially applying a high level potential from the wiring SE[1] to the wiring SE[M - 2], the received light data can be read out for all pixels every three rows.

[0174] As shown in FIG. 14, for example, in the readout of the i-th row, the (i + 1)-th row, and the (i + 2)-th row, by setting the wiring SE[i] to a high level potential, the received light data D W [i, j] from the pixel at the i-th row and j-th column is output to the wiring SLR[j], the received light data D W [i + 1, j] from the pixel at the (i + 1)-th row and j-th column is output to the wiring SLG[j], and the received light data D W [i + 2, j] from the pixel at the (i + 2)-th row and j-th column is output to the wiring SLB[j] simultaneously.

[0175] Subsequently, for the readout of the (i + 3)-th row, the (i + 4)-th row, and the (i + 5)-th row, by setting the wiring SE[i + 3] to a high level potential, the received light data D W [i + 3, j] is output to the wiring SLR[j], and the received light data D W[i + 4, j] receives the light reception data D from the pixel at the (i + 5)-th row and j-th column through the wiring SLB[j]. W [i + 5, j] are each output simultaneously.

[0176] Here, during the entire imaging period, the wiring REN is set to a low-level potential. As a result, in all pixels, the transistor M10 becomes non-conductive, and the light-emitting and receiving element MER and the circuit 31R are electrically disconnected (see FIG. 6B, etc.). Thereby, noise is reduced, and high-precision imaging can be performed.

[0177] Also, during the imaging period, each pixel preferably assumes a state of holding the image data written immediately before (referred to as holding). Thereby, when the imaging period ends and the potential of the wiring REN changes from the low-level potential to the high-level potential, an image corresponding to the immediately held image data can be displayed. Further, by holding the image data written in the pixel 21G or the pixel 21B during the imaging period, crosstalk noise to the anode of the light-emitting and receiving element MER in the pixel 30R can be reduced.

[0178] In the case of a display device having a light-emitting element and a light-receiving element and capable of simultaneous three-row reading as in the above Configuration Example 1, a driving method similar to the above can be applied except that it does not have the wiring REN.

[0179] Also, in the case of having a plurality of light-receiving elements or light-emitting and receiving elements in one pixel as in the above Configuration Example 3, a driving method similar to the above can be applied except that the light reception data D for each row is output during reading. W

[0180] The above is the description of the driving method example.

[0181] ​Since the display device exemplified in this embodiment can increase the number of pixels that can execute reading simultaneously, a high-speed reading operation can be realized. In addition, since a single wiring can have both the function as a source signal line and the function as a reading line, the number of wirings can be reduced, and a display device that can be easily made high-definition can be realized.

[0182] The configuration examples exemplified in this embodiment, and the corresponding drawings and the like can be appropriately combined with at least a part of other configuration examples, or drawings and the like.

[0183] This embodiment can be implemented by appropriately combining at least a part of it with other embodiments described in this specification.

[0184] (Embodiment 2) In this embodiment, a display device according to an aspect of the present invention will be described with reference to FIGS. 15 to 24.

[0185] The display device of this embodiment can be suitably used for the display unit of the display device described in Embodiment 1.

[0186] The display unit of a display device according to an aspect of the present invention has a function of displaying an image using a light-emitting element (also referred to as a light-emitting device). Further, the display unit also has one or both of an imaging function and a sensing function.

[0187] A display device according to an aspect of the present invention has a light-receiving element (also referred to as a light-receiving device) and a light-emitting element. Alternatively, a display device according to an aspect of the present invention has a light-receiving and emitting element (also referred to as a light-receiving and emitting device) and a light-emitting element.

[0188] First, a display device having a light-receiving element and a light-emitting element will be described.

[0189] A display device according to one aspect of the present invention has a light-receiving element and a light-emitting element in a display unit. In the display device according to one aspect of the present invention, the light-emitting elements are arranged in a matrix in the display unit, and an image can be displayed on the display unit. Further, the light-receiving elements are arranged in a matrix in the display unit, and the display unit has one or both of an imaging function and a sensing function. The display unit can be used for an image sensor, a touch sensor, etc. That is, by detecting light with the display unit, an image can be captured and a touch operation of an object (finger, pen, etc.) can be detected. Further, in the display device according to one aspect of the present invention, the light-emitting element can be used as a light source of the sensor. Therefore, it is not necessary to provide a light-receiving unit and a light source separately from the display device, and the number of components of the electronic device can be reduced.

[0190] In the display device according to one aspect of the present invention, when an object reflects (or scatters) the light emitted by the light-emitting element included in the display unit, the light-receiving element can detect the reflected light (or scattered light). Therefore, imaging or detection of a touch operation is possible even in a dark place.

[0191] The display device according to one aspect of the present invention has a function of displaying an image using a light-emitting element. That is, the light-emitting element functions as a display element (also referred to as a display device).

[0192] As the light-emitting element, it is preferable to use an EL element (also referred to as an EL device) such as an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode). Examples of the light-emitting substance included in the EL element include a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescent material), an inorganic compound (such as a quantum dot material), and a substance that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) material). Further, an LED such as a micro LED (Light Emitting Diode) can also be used as the light-emitting element.

[0193] The display device according to one aspect of the present invention has a function of detecting light using a light receiving element.

[0194] When the light receiving element is used as an image sensor, the display device can capture an image using the light receiving element. For example, the display device of the present embodiment can be used as a scanner.

[0195] For example, using an image sensor, data related to biometric information such as fingerprints and palm prints can be acquired. That is, a biometric authentication sensor can be incorporated into the display device. By incorporating the biometric authentication sensor into the display device, the number of components of the electronic device can be reduced compared to the case where a biometric authentication sensor is provided separately from the display device, and the electronic device can be miniaturized and lightened.

[0196] Also, when the light receiving element is used as a touch sensor, the display device can detect a touch operation of an object using the light receiving element.

[0197] As the light receiving element, for example, a pn-type or pin-type photodiode can be used. The light receiving element functions as a photoelectric conversion element (also referred to as a photoelectric conversion device) that detects light incident on the light receiving element and generates charges. The amount of charges generated from the light receiving element is determined based on the amount of light incident on the light receiving element.

[0198] In particular, as the light receiving element, it is preferable to use an organic photodiode having a layer containing an organic compound. The organic photodiode is easy to be thinned, lightened, and enlarged in area, and also has a high degree of freedom in shape and design, so it can be applied to various display devices.

[0199] In one aspect of the present invention, an organic EL element (also referred to as an organic EL device) is used as the light emitting element, and an organic photodiode is used as the light receiving element. The organic EL element and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated into a display device using an organic EL element.

[0200] If all the layers constituting the organic EL element and the organic photodiode are to be separately formed, the number of film-forming steps will increase significantly. Since the organic photodiode has many layers that can have the same configuration as the organic EL element, the layers that can have the same configuration can be formed in a batch, thereby suppressing the increase in the film-forming steps.

[0201] For example, one of the pair of electrodes (common electrode) can be a common layer for the light-receiving element and the light-emitting element. Also, for example, it is preferable that at least one of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer is a common layer for the light-receiving element and the light-emitting element. Further, for example, except that the light-receiving element has an active layer and the light-emitting element has a light-emitting layer, the light-receiving element and the light-emitting element can have the same configuration. That is, a light-receiving element can be manufactured only by replacing the light-emitting layer of the light-emitting element with an active layer. Thus, since the light-receiving element and the light-emitting element have a common layer, the number of film-forming times and the number of masks can be reduced, and the manufacturing process and manufacturing cost of the display device can be reduced. Also, a display device having a light-receiving element can be manufactured using the existing manufacturing apparatus and manufacturing method of the display device.

[0202] Note that the layers commonly possessed by the light-receiving element and the light-emitting element may have different functions in the light-emitting element and the light-receiving element. In this specification, components are named based on their functions in the light-emitting element. For example, the hole injection layer functions as a hole injection layer in the light-emitting element and functions as a hole transport layer in the light-receiving element. Similarly, the electron injection layer functions as an electron injection layer in the light-emitting element and functions as an electron transport layer in the light-receiving element. Also, the layers commonly possessed by the light-receiving element and the light-emitting element may have the same functions in the light-emitting element and the light-receiving element. The hole transport layer functions as a hole transport layer in both the light-emitting element and the light-receiving element, and the electron transport layer functions as an electron transport layer in both the light-emitting element and the light-receiving element.

[0203] Next, a display device having a light-receiving and light-emitting element and a light-emitting element will be described.

[0204] In a display device according to one aspect of the present invention, a sub-pixel that exhibits any color has a light-emitting and light-receiving element instead of a light-emitting element, and sub-pixels that exhibit other colors have light-emitting elements. The light-emitting and light-receiving element has both a function of emitting light (light-emitting function) and a function of receiving light (light-receiving function). For example, when a pixel has three sub-pixels, namely a red sub-pixel, a green sub-pixel, and a blue sub-pixel, at least one sub-pixel has a light-emitting and light-receiving element, and the other sub-pixels have light-emitting elements. Therefore, the display unit of the display device according to one aspect of the present invention has a function of displaying an image using both the light-emitting and light-receiving element and the light-emitting element.

[0205] By the light-emitting and light-receiving element serving as both a light-emitting element and a light-receiving element, a light-receiving function can be imparted to a pixel without increasing the number of sub-pixels included in the pixel. Thereby, while maintaining the aperture ratio of the pixel (the aperture ratio of each sub-pixel) and the definition of the display device, one or both of an imaging function and a sensing function can be added to the display unit of the display device. Therefore, compared with the case where a sub-pixel having a light-receiving element is provided separately from the sub-pixel having a light-emitting element, the display device according to one aspect of the present invention can increase the aperture ratio of the pixel and is easily made high-definition.

[0206] In a display device according to one aspect of the present invention, the light-emitting and light-receiving element and the light-emitting element are arranged in a matrix in the display unit, and an image can be displayed on the display unit. Further, the display unit can be used for an image sensor, a touch sensor, etc. The display device according to one aspect of the present invention can use the light-emitting element as a light source of the sensor. Therefore, it is not necessary to provide a light-receiving unit and a light source separately from the display device, and the number of parts of the electronic device can be reduced.

[0207] In the display device according to one aspect of the present invention, when the light emitted by the light-emitting element included in the display unit is reflected (or scattered) by an object, the light-emitting and light-receiving element can detect the reflected light (or scattered light). Therefore, imaging or detection of a touch operation is possible even in a dark place.

[0208] The light-emitting and light-receiving element can be manufactured by combining an organic EL element and an organic photodiode. For example, a light-emitting and light-receiving element can be manufactured by adding an active layer of an organic photodiode to the stacked structure of an organic EL element. Furthermore, in the light-emitting and light-receiving element manufactured by combining an organic EL element and an organic photodiode, the number of film formation steps can be suppressed by collectively forming the layers that can have the same configuration as the organic EL element.

[0209] For example, one of a pair of electrodes (common electrode) can be a common layer for the light-emitting and light-receiving element and the light-emitting element. Also, for example, it is preferable that at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer is a common layer for the light-emitting and light-receiving element and the light-emitting element. Also, for example, except for the presence or absence of the active layer of the light-receiving element, the light-emitting and light-receiving element and the light-emitting element can have the same configuration. That is, a light-emitting and light-receiving element can also be manufactured by simply adding the active layer of the light-receiving element to the light-emitting element. In this way, since the light-emitting and light-receiving element and the light-emitting element have a common layer, the number of film formation times and the number of masks can be reduced, and the manufacturing process and manufacturing cost of the display device can be reduced. Also, a display device having a light-emitting and light-receiving element can be manufactured using the existing manufacturing equipment and manufacturing method of the display device.

[0210] Note that the layers of the light-emitting and light-receiving element may have different functions when the light-emitting and light-receiving element functions as a light-receiving element and when it functions as a light-emitting element. In this specification, components are named based on the functions when the light-emitting and light-receiving element functions as a light-emitting element. For example, the hole injection layer functions as a hole injection layer when the light-emitting and light-receiving element functions as a light-emitting element, and functions as a hole transport layer when the light-emitting and light-receiving element functions as a light-receiving element. Similarly, the electron injection layer functions as an electron injection layer when the light-emitting and light-receiving element functions as a light-emitting element, and functions as an electron transport layer when the light-emitting and light-receiving element functions as a light-receiving element. Also, the layers of the light-emitting and light-receiving element may have the same function when the light-emitting and light-receiving element functions as a light-receiving element and when it functions as a light-emitting element. The hole transport layer functions as a hole transport layer regardless of whether it functions as a light-emitting element or a light-receiving element, and the electron transport layer functions as an electron transport layer regardless of whether it functions as a light-emitting element or a light-receiving element.

[0211] The display device of this embodiment has a function of displaying an image using a light-emitting element and a light-emitting and light-receiving element. That is, the light-emitting element and the light-emitting and light-receiving element function as display elements.

[0212] The display device of this embodiment has a function of detecting light using a light-emitting and light-receiving element. The light-emitting and light-receiving element can detect light with a shorter wavelength than the light emitted by the light-emitting and light-receiving element itself.

[0213] When the light-emitting and light-receiving element is used as an image sensor, the display device of this embodiment can capture an image using the light-emitting and light-receiving element. For example, the display device of this embodiment can be used as a scanner.

[0214] Also, when the light-emitting and light-receiving element is used as a touch sensor, the display device of this embodiment can detect a touch operation of an object using the light-emitting and light-receiving element.

[0215] The light-emitting and light-receiving element functions as a photoelectric conversion element that detects light incident on the light-emitting and light-receiving element and generates electric charges. The amount of electric charges generated from the light-emitting and light-receiving element is determined based on the amount of light incident on the light-emitting and light-receiving element.

[0216] The light-emitting and light-receiving element can be manufactured by adding an active layer of a light-receiving element to the structure of the above-described light-emitting element.

[0217] For the light-emitting and light-receiving element, for example, an active layer of a pn-type or pin-type photodiode can be used.

[0218] In particular, it is preferable to use an active layer of an organic photodiode having a layer containing an organic compound for the light-emitting and light-receiving element. Since the organic photodiode can be easily thinned, lightened, and enlarged in area, and also has a high degree of freedom in shape and design, it can be applied to various display devices.

[0219] Hereinafter, a display device according to an aspect of the present invention will be described more specifically with reference to the drawings.

[0220] [Display Device] Cross-sectional views of a display device according to an aspect of the present invention are shown in FIGS. 15A to 15D and FIG. 15F.

[0221] The display device 200A shown in FIG. 15A has a layer 203 having a light-receiving element, a functional layer 205, and a layer 207 having a light-emitting element between a substrate 201 and a substrate 209.

[0222] The display device 200A is configured such that light of red (R), green (G), and blue (B) is emitted from the layer 207 having the light-emitting element.

[0223] The light-receiving element included in the layer 203 having the light-receiving element can detect light incident from the outside of the display device 200A.

[0224] The display device 200B shown in FIG. 15B has a layer 204 having a light-emitting and light-receiving element, a functional layer 205, and a layer 207 having a light-emitting element between a substrate 201 and a substrate 209.

[0225] The display device 200B is configured such that green (G) light and blue (B) light are emitted from the layer 207 having light-emitting elements, and red (R) light is emitted from the layer 204 having light-receiving and light-emitting elements. Note that, in the display device according to one embodiment of the present invention, the color of the light emitted from the layer 204 having light-receiving and light-emitting elements is not limited to red. Also, the color of the light emitted from the layer 207 having light-emitting elements is not limited to the combination of green and blue.

[0226] The light-receiving and light-emitting elements included in the layer 204 having light-receiving and light-emitting elements can detect light incident from outside the display device 200B. The light-receiving and light-emitting elements can detect, for example, one or both of green (G) light and blue (B) light.

[0227] The functional layer 205 includes a circuit for driving a light-receiving element or a light-receiving and light-emitting element and a circuit for driving a light-emitting element. The functional layer 205 can be provided with a switch, a transistor, a capacitor, a resistor, a wiring, a terminal, and the like. Note that, when the light-emitting element and the light-receiving element are driven in a passive matrix system, a configuration in which a switch, a transistor, or the like is not provided may be employed.

[0228] The display device according to one embodiment of the present invention may have a function of detecting an object such as a finger touching the display device (function as a touch panel). For example, as shown in FIG. 15C, light emitted from the light-emitting elements in the layer 207 having light-emitting elements is reflected by the finger 202 touching the display device 200A, and the light-receiving elements in the layer 203 having light-receiving elements detect the reflected light. Thereby, it can be detected that the finger 202 has touched the display device 200A. Also, in the display device 200B, light emitted from the light-emitting elements in the layer 207 having light-emitting elements is reflected by a finger touching the display device 200B, and the light-receiving and light-emitting elements in the layer 204 having light-receiving and light-emitting elements can detect the reflected light. Note that, hereinafter, the case where the light emitted from the light-emitting elements is reflected by an object will be described as an example, but the light may be scattered by the object.

[0229] As shown in FIG. 15D, the display device according to one aspect of the present invention may have a function of detecting or imaging an object that is close to (but not in contact with) the display device.

[0230] The display device according to one aspect of the present invention may have a function of detecting the fingerprint of finger 202. FIG. 15E shows an image diagram of an image captured by the display device according to one aspect of the present invention. In FIG. 15E, the outline of finger 202 is shown by a dashed line and the outline of contact portion 261 is shown by a dotted line within imaging range 263. Within contact portion 261, an image of fingerprint 262 with high contrast can be captured due to the difference in the amount of light incident on the light receiving element (or light emitting and receiving element).

[0231] The display device according to one aspect of the present invention can also function as a tablet. FIG. 15F shows a state where the tip of stylus 208 is touching substrate 209 and being slid in the direction of the dashed arrow.

[0232] As shown in FIG. 15F, the scattered light scattered at the contact surface between the tip of stylus 208 and substrate 209 is incident on the light receiving element (or light emitting and receiving element) located at the portion overlapping with the contact surface, so that the position of the tip of stylus 208 can be detected with high precision.

[0233] FIG. 15G shows an example of the locus 266 of stylus 208 detected by the display device according to one aspect of the present invention. Since the display device according to one aspect of the present invention can detect the position of a detected object such as stylus 208 with high position accuracy, it is also possible to perform high-definition drawing in a drawing application or the like. Also, different from the case of using a capacitive touch sensor, an electromagnetic induction type touch pen, etc., since the position of a highly insulating detected object can be detected, the material of the tip portion of stylus 208 is not limited, and various writing utensils (for example, pens, glass pens, feather pens, etc.) can also be used.

[0234] [Pixel] The display device according to one aspect of the present invention has a plurality of pixels arranged in a matrix. One pixel has a plurality of sub-pixels. One sub-pixel has one light-emitting element, one light-emitting and receiving element, or one light-receiving element.

[0235] Each of the plurality of pixels has one or more of a sub-pixel having a light-emitting element, a sub-pixel having a light-receiving element, and a sub-pixel having a light-emitting and receiving element.

[0236] For example, a pixel has a plurality (for example, three or four) of sub-pixels having a light-emitting element and one sub-pixel having a light-receiving element.

[0237] Note that the light-receiving element may be provided in all pixels or in some pixels. Also, one pixel may have a plurality of light-receiving elements. Further, one light-receiving element may be provided across a plurality of pixels. The fineness of the light-receiving element and the fineness of the light-emitting element may be different from each other.

[0238] When a pixel has three sub-pixels having a light-emitting element, examples of the three sub-pixels include sub-pixels of three colors, R, G, and B, and sub-pixels of three colors, yellow (Y), cyan (C), and magenta (M). When a pixel has four sub-pixels having a light-emitting element, examples of the four sub-pixels include sub-pixels of four colors, R, G, B, and white (W), and sub-pixels of four colors, R, G, B, and Y.

[0239] FIGS. 15H, 15(J), 15(K), and 15(L) show an example of a pixel having a plurality of sub-pixels having a light-emitting element and one sub-pixel having a light-receiving element. Note that the arrangement order of the sub-pixels shown in this embodiment is not limited to the illustrated order. For example, the positions of the sub-pixel (B) and the sub-pixel (G) may be reversed.

[0240] Each of the pixels shown in FIGS. 15H, 15(J), and 15(K) has a sub-pixel (PD) having a light-receiving function, a sub-pixel (R) presenting red light, a sub-pixel (G) presenting green light, and a sub-pixel (B) presenting blue light.

[0241] A matrix array is applied to the pixels shown in FIG. 15H, and a stripe array is applied to the pixels shown in FIG. 15(J). Further, FIG. 15(K) is an example in which sub-pixels (R) presenting red light, sub-pixels (G) presenting green light, and sub-pixels (B) presenting blue light are arranged in a single horizontal row, and a sub-pixel (PD) having a light receiving function is arranged below them. That is, in FIG. 15(K), the sub-pixels (R), sub-pixels (G), and sub-pixels (B) are arranged in the same row as each other, and are arranged in a row different from the sub-pixel (PD).

[0242] In addition to the configuration of the pixels shown in FIG. 15(K), the pixels shown in FIG. 15(L) have sub-pixels (X) presenting light other than R, G, and B. Examples of light other than R, G, and B include light such as white (W), yellow (Y), cyan (C), magenta (M), and infrared light (IR). When the sub-pixel X presents infrared light, it is preferable that the sub-pixel (PD) having a light receiving function has a function of detecting infrared light. The sub-pixel (PD) having a light receiving function may have a function of detecting both visible light and infrared light. The wavelength of the light detected by the light receiving element can be determined according to the use of the sensor.

[0243] Alternatively, for example, a pixel has a plurality of sub-pixels having light emitting elements and one sub-pixel having a light emitting and receiving element.

[0244] A display device having a light emitting and receiving element does not need to change the pixel arrangement in order to incorporate a light receiving function into the pixel, and thus one or both of an imaging function and a sensing function can be added to the display unit without reducing the aperture ratio and the fineness.

[0245] Note that the light emitting and receiving elements may be provided in all pixels, or may be provided in some pixels. Also, one pixel may have a plurality of light emitting and receiving elements.

[0246] FIGS. 16A to 16D show an example of a pixel having a plurality of sub-pixels having light emitting elements and one sub-pixel having a light emitting and receiving element.

[0247] The pixel shown in Fig. 16A has a sub-pixel (MER) that exhibits red light and has a light receiving function, a sub-pixel (G) that exhibits green light, and a sub-pixel (B) that exhibits blue light. In a display device in which a pixel is composed of three sub-pixels of R, G, and B, by replacing the light emitting element used for the R sub-pixel with a light emitting and receiving element, a display device having a light receiving function can be fabricated for the pixel.

[0248] The pixel shown in Fig. 16B has a sub-pixel (MER) that exhibits red light and has a light receiving function, a sub-pixel (G) that exhibits green light, and a sub-pixel (B) that exhibits blue light. The sub-pixel (MER) is arranged in a column different from the sub-pixels (G) and (B). The sub-pixels (G) and (B) are alternately arranged in the same column, with one provided in odd rows and the other provided in even rows. Note that the sub-pixel arranged in a column different from the sub-pixels of other colors is not limited to red (R), and may be green (G) or blue (B).

[0249] The pixel shown in Fig. 16C has a matrix array applied, and has a sub-pixel (MER) that exhibits red light and has a light receiving function, a sub-pixel (G) that exhibits green light, a sub-pixel (B) that exhibits blue light, and a sub-pixel (X) that exhibits light other than R, G, and B. Even in a display device in which a pixel is composed of four sub-pixels of R, G, B, and X, by replacing the light emitting element used for the R sub-pixel with a light emitting and receiving element, a display device having a light receiving function can be fabricated for the pixel.

[0250] FIG. 16D shows two pixels, and one pixel is composed of three sub-pixels surrounded by dotted lines. The pixels shown in FIG. 16D exhibit red light and have a sub-pixel (MER) with a light-receiving function, a sub-pixel (G) that exhibits green light, and a sub-pixel (B) that exhibits blue light. In the left pixel shown in FIG. 16D, the sub-pixel (G) is arranged in the same row as the sub-pixel (MER), and the sub-pixel (B) is arranged in the same column as the sub-pixel (MER). In the right pixel shown in FIG. 16D, the sub-pixel (G) is arranged in the same row as the sub-pixel (MER), and the sub-pixel (B) is arranged in the same column as the sub-pixel (G). In the pixel layout shown in FIG. 16D, the sub-pixels (MER), (G), and (B) are repeatedly arranged in both odd and even rows, and in each column, sub-pixels of different colors are arranged in odd and even rows.

[0251] FIG. 16E shows four pixels to which a pentile array is applied, and two adjacent pixels have sub-pixels that exhibit two different colors of light in combination. Note that the shape of the sub-pixels shown in FIG. 16E indicates the upper surface shape of the light-emitting element or the light-emitting and light-receiving element that the sub-pixel has. FIG. 16F is a modified example of the pixel arrangement shown in FIG. 16E.

[0252] The upper left pixel and the lower right pixel shown in FIG. 16E exhibit red light and have a sub-pixel (MER) with a light-receiving function and a sub-pixel (G) that exhibits green light. The lower left pixel and the upper right pixel shown in FIG. 16E have a sub-pixel (G) that exhibits green light and a sub-pixel (B) that exhibits blue light.

[0253] The upper left pixel and the lower right pixel shown in FIG. 16F exhibit red light and have a sub-pixel (MER) with a light-receiving function and a sub-pixel (G) that exhibits green light. The lower left pixel and the upper right pixel shown in FIG. 16F have a sub-pixel (MER) with a light-receiving function and a sub-pixel (B) that exhibits blue light.

[0254] In FIG. 16E, a sub-pixel (G) that exhibits green light is provided for each pixel. On the other hand, in FIG. 16F, a sub-pixel (MER) that exhibits red light and has a light-receiving function is provided for each pixel. Since a sub-pixel having a light-receiving function is provided for each pixel, in the configuration shown in FIG. 16F, imaging can be performed with higher resolution than the configuration shown in FIG. 16E. Thereby, for example, the accuracy of biometric authentication can be improved.

[0255] Further, the upper surface shape of the light-emitting element and the light-emitting and light-receiving element is not particularly limited, and can be a circle, an ellipse, a polygon, a rounded polygon, or the like. Regarding the upper surface shape of the light-emitting element included in the sub-pixel (G), an example of a circular shape is shown in FIG. 16E, and an example of a square shape is shown in FIG. 16F. The upper surface shapes of the light-emitting elements and the light-emitting and light-receiving elements of each color may be different from each other, or may be the same for some or all colors.

[0256] Also, the aperture ratios of the sub-pixels of each color may be different from each other, or may be the same for some or all colors. For example, the aperture ratio of the sub-pixel provided for each pixel (sub-pixel (G) in FIG. 16E, sub-pixel (MER) in FIG. 16F) may be made smaller than the aperture ratios of the sub-pixels of other colors.

[0257] FIG. 16G is a modified example of the pixel arrangement shown in FIG. 16F. Specifically, the configuration of FIG. 16G is obtained by rotating the configuration of FIG. 16F by 45°. In FIG. 16F, it has been described that one pixel is constituted by two sub-pixels, but as shown in FIG. 16G, it can also be considered that one pixel is constituted by four sub-pixels.

[0258] In FIG. 16G, it will be described that one pixel is constituted by four sub-pixels surrounded by a dotted line. One pixel has two sub-pixels (MER), one sub-pixel (G), and one sub-pixel (B). In this way, by having a plurality of sub-pixels having a light-receiving function for one pixel, imaging can be performed with high resolution. Therefore, the accuracy of biometric authentication can be improved. For example, the imaging resolution can be set to √2 times the display resolution.

[0259] In a display device to which the configuration shown in FIG. 16F or FIG. 16G is applied, there are p first light-emitting elements (p is an integer of 2 or more), q second light-emitting elements (q is an integer of 2 or more), and r light-receiving and light-emitting elements (r is an integer greater than p and greater than q). p and r satisfy r = 2p. Also, p, q, and r satisfy r = p + q. One of the first light-emitting element and the second light-emitting element emits green light, and the other emits blue light. The light-receiving and light-emitting element emits red light and has a light-receiving function.

[0260] For example, when detecting a touch operation using a light-receiving and light-emitting element, it is preferable that the light emission from the light source is difficult for the user to visually recognize. Since blue light has lower visibility than green light, it is preferable to use a light-emitting element that emits blue light as the light source. Therefore, it is preferable that the light-receiving and light-emitting element has a function of receiving blue light.

[0261] As described above, various arrays of pixels can be applied to the display device of the present embodiment.

[0262] [Device Structure] Next, the detailed configurations of the light-emitting element, the light-receiving element, and the light-receiving and light-emitting element that can be used in the display device according to one aspect of the present invention will be described.

[0263] The display device according to one aspect of the present invention may be any of a top emission type that emits light in a direction opposite to the substrate on which the light-emitting element is formed, a bottom emission type that emits light on the substrate side where the light-emitting element is formed, and a dual emission type that emits light on both sides.

[0264] In the present embodiment, a top emission type display device will be described as an example.

[0265] In this specification and the like, unless otherwise specified, even when describing a configuration having a plurality of elements (such as a light-emitting element and a light-emitting layer), when describing matters common to each element, the alphabet is omitted. For example, when describing matters common to the light-emitting layer 283R and the light-emitting layer 283G, etc., it may be described as the light-emitting layer 283.

[0266] The display device 280A shown in FIG. 17A includes a light-receiving element 270PD, a light-emitting element 270R that emits red (R) light, a light-emitting element 270G that emits green (G) light, and a light-emitting element 270B that emits blue (B) light.

[0267] Each light-emitting element has a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, a light-emitting layer, an electron transport layer 284, an electron injection layer 285, and a common electrode 275 laminated in this order. The light-emitting element 270R has a light-emitting layer 283R, the light-emitting element 270G has a light-emitting layer 283G, and the light-emitting element 270B has a light-emitting layer 283B. The light-emitting layer 283R has a light-emitting substance that emits red light, the light-emitting layer 283G has a light-emitting substance that emits green light, and the light-emitting layer 283B has a light-emitting substance that emits blue light.

[0268] The light-emitting element is an electroluminescent element that emits light toward the common electrode 275 side by applying a voltage between the pixel electrode 271 and the common electrode 275.

[0269] The light-receiving element 270PD has a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, an active layer 273, an electron transport layer 284, an electron injection layer 285, and a common electrode 275 laminated in this order.

[0270] The light-receiving element 270PD is a photoelectric conversion element that receives light incident from outside the display device 280A and converts it into an electrical signal.

[0271] In the present embodiment, it will be described that in both the light-emitting element and the light-receiving element, the pixel electrode 271 functions as an anode and the common electrode 275 functions as a cathode. That is, the light-receiving element can detect the light incident on the light-receiving element, generate charges, and extract them as a current by driving with a reverse bias applied between the pixel electrode 271 and the common electrode 275.

[0272] In the display device of the present embodiment, an organic compound is used for the active layer 273 of the light-receiving element 270PD. The light-receiving element 270PD can have the same configuration as the light-emitting element for the layers other than the active layer 273. Therefore, the light-receiving element 270PD can be formed in parallel with the formation of the light-emitting element only by adding a step of forming the active layer 273 to the manufacturing process of the light-emitting element. Further, the light-emitting element and the light-receiving element 270PD can be formed on the same substrate. Therefore, the light-receiving element 270PD can be incorporated into the display device without significantly increasing the manufacturing process.

[0273] In the display device 280A, an example is shown in which the light-receiving element 270PD and the light-emitting element have a common configuration except that the active layer 273 of the light-receiving element 270PD and the light-emitting layer 283 of the light-emitting element are made separately. However, the configurations of the light-receiving element 270PD and the light-emitting element are not limited to this. The light-receiving element 270PD and the light-emitting element may have layers that are made separately from each other in addition to the active layer 273 and the light-emitting layer 283. The light-receiving element 270PD and the light-emitting element preferably have one or more layers (common layers) that are commonly used. Thereby, the light-receiving element 270PD can be incorporated into the display device without significantly increasing the manufacturing process.

[0274] For the electrode on the side where light is extracted among the pixel electrode 271 and the common electrode 275, a conductive film that transmits visible light is used. Further, for the electrode on the side where light is not extracted, it is preferable to use a conductive film that reflects visible light.

[0275] It is preferable that a microcavity structure is applied to the light-emitting element included in the display device of the present embodiment. Therefore, it is preferable that one of the pair of electrodes included in the light-emitting element has an electrode (semi-transmissive / semi-reflective electrode) having transmissivity and reflectivity with respect to visible light, and the other has an electrode (reflective electrode) having reflectivity with respect to visible light. By having a microcavity structure in the light-emitting element, the light emitted from the light-emitting layer can be resonated between both electrodes, and the light emitted from the light-emitting element can be strengthened.

[0276] Note that the semi-transmissive / semi-reflective electrode can have a laminated structure of a reflective electrode and an electrode having transmissivity with respect to visible light (also referred to as a transparent electrode).

[0277] The light transmittance of the transparent electrode is set to 40% or more. For example, it is preferable to use an electrode having a visible light (light having a wavelength of 400 nm or more and less than 750 nm) transmittance of 40% or more for the light-emitting element. The visible light reflectivity of the semi-transmissive / semi-reflective electrode is set to 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectivity of the reflective electrode is set to 40% or more and 100% or less, preferably 70% or more and 100% or less. Further, the resistivity of these electrodes is preferably 1×10 -2 Ωcm or less. Note that when the light-emitting element emits near-infrared light (light having a wavelength of 750 nm or more and 1300 nm or less), the transmittance or reflectivity of the near-infrared light of these electrodes preferably satisfies the above numerical range, similar to the transmittance or reflectivity of visible light.

[0278] The light-emitting element has at least a light-emitting layer 283. As layers other than the light-emitting layer 283, the light-emitting element may further have a layer containing a substance with high hole-injecting property, a substance with high hole-transporting property, a hole-blocking material, a substance with high electron-transporting property, a substance with high electron-injecting property, an electron-blocking material, or a bipolar substance (a substance with high electron-transporting property and high hole-transporting property).

[0279] For example, the light-emitting element and the light-receiving element can have one or more of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer as a common configuration. Further, the light-emitting element and the light-receiving element can form one or more of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer separately from each other.

[0280] The hole injection layer is a layer that injects holes from the anode into the hole transport layer and is a layer containing a material with high hole injection properties. As a material with high hole injection properties, a composite material containing a hole transport material and an acceptor material (electron-accepting material), or an aromatic amine compound, etc. can be used.

[0281] In the light-emitting element, the hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. In the light-receiving element, the hole transport layer is a layer that transports holes generated based on light incident on the active layer to the anode. The hole transport layer is a layer containing a hole transport material. As the hole transport material, a substance having a hole mobility of 1×10 -6 cm 2 / Vs or more is preferable. In addition, as long as it is a substance with higher hole transportability than electrons, other substances can also be used. As the hole transport material, a hole transport material with high hole transportability such as a π-electron excess type heteroaromatic compound (for example, a carbazole derivative, a thiophene derivative, a furan derivative, etc.), an aromatic amine (a compound having an aromatic amine skeleton), etc. is preferable.

[0282] In the light-emitting element, the electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. In the light-receiving element, the electron transport layer is a layer that transports electrons generated based on light incident on the active layer to the cathode. The electron transport layer is a layer containing an electron transport material. As the electron transport material, a substance having an electron mobility of 1×10 -6 cm 2A substance having an electron mobility of / Vs or more is preferable. In addition, any other substance can be used as long as it has higher electron transportability than holes. As the electron transport material, in addition to metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, etc., oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other materials having high electron transportability such as π-electron deficient heteroaromatic compounds containing nitrogen-containing heteroaromatic compounds can be used.

[0283] The electron injection layer is a layer that injects electrons from the cathode into the electron transport layer, and is a layer containing a material having high electron injection properties. As the material having high electron injection properties, an alkali metal, an alkaline earth metal, or a compound thereof can be used. As the material having high electron injection properties, a composite material containing an electron transport material and a donor material (electron donating material) can also be used.

[0284] The light emitting layer 283 is a layer containing a light emitting substance. The light emitting layer 283 can have one or more kinds of light emitting substances. As the light emitting substance, substances exhibiting light emitting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red are appropriately used. In addition, a substance that emits near-infrared light can also be used as the light emitting substance.

[0285] Examples of the light emitting substance include a fluorescent material, a phosphorescent material, a TADF material, and a quantum dot material.

[0286] Examples of the fluorescent material include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, naphthalene derivatives, and the like.

[0287] Examples of the phosphorescent material include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton, organometallic complexes (especially iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand, platinum complexes, rare earth metal complexes, and the like.

[0288] In addition to the luminescent substance (guest material), the light-emitting layer 283 may contain one or more organic compounds (host materials, assist materials, etc.). As the one or more organic compounds, one or both of a hole-transporting material and an electron-transporting material can be used. Further, a bipolar material or a TADF material may be used as the one or more organic compounds.

[0289] The light-emitting layer 283 preferably has, for example, a phosphorescent material, and a hole-transporting material and an electron-transporting material that are a combination likely to form an exciplex. By adopting such a configuration, light emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the exciplex to the luminescent substance (phosphorescent material), can be efficiently obtained. By selecting a combination that forms an exciplex that exhibits light emission overlapping the wavelength of the absorption band on the lowest energy side of the luminescent substance, energy transfer becomes smooth and light emission can be efficiently obtained. With this configuration, high efficiency, low-voltage driving, and long life of the light-emitting element can be achieved simultaneously.

[0290] As a combination of materials that form an exciplex, it is preferable that the HOMO level (highest occupied orbital level) of the hole-transporting material is a value equal to or higher than the HOMO level of the electron-transporting material. It is preferable that the LUMO level (lowest unoccupied orbital level) of the hole-transporting material is a value equal to or higher than the LUMO level of the electron-transporting material. The LUMO level and HOMO level of the material can be derived from the electrochemical characteristics (reduction potential and oxidation potential) of the material measured by cyclic voltammetry (CV) measurement.

[0291] The formation of the exciplex can be confirmed, for example, by comparing the emission spectra of a hole transporting material, the emission spectra of an electron transporting material, and the emission spectra of a mixed film in which these materials are mixed, and observing the phenomenon that the emission spectrum of the mixed film is shifted to a longer wavelength (or has a new peak on the longer wavelength side) than the emission spectra of the respective materials. Alternatively, the transient photoluminescence (PL) of the hole transporting material, the transient PL of the electron transporting material, and the transient PL of a mixed film in which these materials are mixed are compared, and the formation of the exciplex can be confirmed by observing differences in transient responses such as that the transient PL lifetime of the mixed film has a longer lifetime component or the ratio of the delayed component is larger than the transient PL lifetimes of the respective materials. Further, the above-mentioned transient PL may be read as transient electroluminescence (EL). That is, the transient EL of the hole transporting material, the transient EL of the material having electron transporting properties, and the transient EL of a mixed film thereof are compared, and the formation of the exciplex can also be confirmed by observing differences in transient responses.

[0292] The active layer 273 contains a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon, and organic semiconductors containing organic compounds. In the present embodiment, an example in which an organic semiconductor is used as the semiconductor included in the active layer 273 is shown. By using an organic semiconductor, the light emitting layer 283 and the active layer 273 can be formed by the same method (for example, vacuum evaporation method), and it is preferable because the manufacturing apparatus can be shared.

[0293] Examples of the material of the n-type semiconductor included in the active layer 273 include fullerenes (for example, C 60 , C 70Examples of the electron-accepting organic semiconductor materials include fullerenes, fullerene derivatives, etc. Fullerenes have a soccer ball-like shape, and this shape is energetically stable. Fullerenes have deep (low) HOMO levels and LUMO levels. Since fullerenes have deep LUMO levels, they have extremely high electron-accepting (acceptor) properties. Usually, when π-electron conjugation (resonance) spreads in a plane like benzene, the electron-donating (donor) property increases. However, since fullerenes have a spherical shape, despite the large spread of π electrons, they have high electron-accepting properties. High electron-accepting properties are beneficial for a light-receiving element because they cause charge separation to occur efficiently at high speed. C 60 , C 70 both have broad absorption bands in the visible light region. In particular, C 70 is preferable because it has a larger π-electron conjugation system than C 60 and also has a broad absorption band in the long wavelength region.

[0294] Examples of the materials for the n-type semiconductor also include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, quinone derivatives, etc.

[0295] Examples of the materials for the p-type semiconductor included in the active layer 273 include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), quinacridone, etc.

[0296] Examples of the p-type semiconductor material include carbazole derivatives, thiophene derivatives, furan derivatives, compounds having an aromatic amine skeleton, and the like. Further examples of the p-type semiconductor material include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylene vinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, and the like.

[0297] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material. The LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0298] As the electron-accepting organic semiconductor material, it is preferable to use spherical fullerene, and as the electron-donating organic semiconductor material, it is preferable to use an organic semiconductor material having a shape close to a plane. Molecules with similar shapes tend to aggregate easily. When the same type of molecules aggregate, the energy levels of the molecular orbitals are close to each other, so that the carrier transport property can be enhanced.

[0299] For example, the active layer 273 is preferably formed by co-evaporation of an n-type semiconductor and a p-type semiconductor.

[0300] Either a low molecular weight compound or a high molecular weight compound can be used for the light-emitting element and the light-receiving element, and an inorganic compound may be included. The layers constituting the light-emitting element and the light-receiving element can be formed by methods such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, and a coating method, respectively.

[0301] The display device 280B shown in FIG. 17B is different from the display device 280A in that the light receiving element 270PD and the light emitting element 270R have the same configuration.

[0302] The light receiving element 270PD and the light emitting element 270R commonly have the active layer 273 and the light emitting layer 283R.

[0303] Here, it is preferable that the light receiving element 270PD has the same configuration as a light emitting element that emits light with a longer wavelength than the light to be detected. For example, the light receiving element 270PD configured to detect blue light can have the same configuration as one or both of the light emitting element 270R and the light emitting element 270G. For example, the light receiving element 270PD configured to detect green light can have the same configuration as the light emitting element 270R.

[0304] By making the light receiving element 270PD and the light emitting element 270R have the same configuration, the number of film formation steps and the number of masks can be reduced compared to a configuration in which the light receiving element 270PD and the light emitting element 270R have layers that are made separately from each other. Therefore, the manufacturing process and manufacturing cost of the display device can be reduced.

[0305] Further, by making the light receiving element 270PD and the light emitting element 270R have the same configuration, the margin for misalignment can be narrowed compared to a configuration in which the light receiving element 270PD and the light emitting element 270R have layers that are made separately from each other. Thereby, the aperture ratio of the pixel can be increased, and the light extraction efficiency of the display device can be increased. Thereby, the lifespan of the light emitting element can be extended. Further, the display device can exhibit high luminance. Also, high definition of the display device is possible.

[0306] The light-emitting layer 283R has a light-emitting material that emits red light. The active layer 273 has an organic compound that absorbs light with a shorter wavelength than red light (for example, one or both of green light and blue light). The active layer 273 preferably has an organic compound that hardly absorbs red light and absorbs light with a shorter wavelength than red light. Thereby, red light is efficiently extracted from the light-emitting element 270R, and the light-receiving element 270PD can detect light with a shorter wavelength than red light with high accuracy.

[0307] In addition, in the display device 280B, an example in which the light-emitting element 270R and the light-receiving element 270PD have the same configuration is shown, but the light-emitting element 270R and the light-receiving element 270PD may each have an optical adjustment layer with a different thickness.

[0308] The display device 280C shown in FIGS. 18A and 18B has a light-emitting and light-receiving element 270MER that emits red (R) light and has a light-receiving function, a light-emitting element 270G that emits green (G) light, and a light-emitting element 270B that emits blue (B) light.

[0309] Each light-emitting element has a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, a light-emitting layer, an electron transport layer 284, an electron injection layer 285, and a common electrode 275 laminated in this order. The light-emitting element 270G has a light-emitting layer 283G, and the light-emitting element 270B has a light-emitting layer 283B. The light-emitting layer 283G has a light-emitting substance that emits green light, and the light-emitting layer 283B has a light-emitting substance that emits blue light.

[0310] The light-emitting and light-receiving element 270MER has a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, an active layer 273, a light-emitting layer 283R, an electron transport layer 284, an electron injection layer 285, and a common electrode 275 laminated in this order.

[0311] Note that the light-emitting and light-receiving element 270MER included in the display device 280C has the same configuration as the light-emitting element 270R and the light-receiving element 270PD included in the display device 280B. Also, the light-emitting elements 270G and 270B included in the display device 280C have the same configuration as the light-emitting elements 270G and 270B included in the display device 280B.

[0312] In FIG. 18A, a case where the light-emitting and light-receiving element 270MER functions as a light-emitting element is shown. In FIG. 18A, an example is shown in which the light-emitting element 270B emits blue light, the light-emitting element 270G emits green light, and the light-emitting and light-receiving element 270MER emits red light.

[0313] In FIG. 18B, a case where the light-emitting and light-receiving element 270MER functions as a light-receiving element is shown. In FIG. 18B, an example is shown in which the light-emitting and light-receiving element 270MER detects the blue light emitted by the light-emitting element 270B and the green light emitted by the light-emitting element 270G.

[0314] The light-emitting element 270B, the light-emitting element 270G, and the light-emitting and light-receiving element 270MER each have a pixel electrode 271 and a common electrode 275. In the present embodiment, a case where the pixel electrode 271 functions as an anode and the common electrode 275 functions as a cathode will be described as an example.

[0315] In the present embodiment, similar to the light-emitting element, it will be described that in the light-emitting and light-receiving element 270MER, the pixel electrode 271 functions as an anode and the common electrode 275 functions as a cathode. That is, the light-emitting and light-receiving element 270MER can detect the light incident on the light-emitting and light-receiving element 270MER, generate charges, and extract them as a current by applying a reverse bias between the pixel electrode 271 and the common electrode 275 and driving it.

[0316] Note that the light-emitting and light-receiving element 270MER shown in FIGS. 18A and 18B can be said to have a configuration in which an active layer 273 is added to the light-emitting element. That is, by simply adding a step of forming the active layer 273 to the manufacturing process of the light-emitting element, the light-emitting and light-receiving element 270MER can be formed in parallel with the formation of the light-emitting element. Further, the light-emitting element and the light-receiving element can be formed on the same substrate. Therefore, one or both of the imaging function and the sensing function can be imparted to the display unit without significantly increasing the manufacturing process.

[0317] Note that the stacking order of the light-emitting layer 283R and the active layer 273 is not limited. FIGS. 18A and 18B show an example in which the active layer 273 is provided on the hole transport layer 282 and the light-emitting layer 283R is provided on the active layer 273. The light-emitting layer 283R may be provided on the hole transport layer 282 and the active layer 273 may be provided on the light-emitting layer 283R.

[0318] As shown in FIGS. 18A and 18B, the active layer 273 and the light-emitting layer 283R may be in contact with each other. Further, a buffer layer may be sandwiched between the active layer 273 and the light-emitting layer 283R. As the buffer layer, at least one layer among a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a hole blocking layer, and an electron blocking layer can be used.

[0319] By providing a buffer layer between the active layer 273 and the light-emitting layer 283R, it is possible to suppress the transfer of excitation energy from the light-emitting layer 283R to the active layer 273. Further, the optical path length (cavity length) of the microcavity structure can also be adjusted using the buffer layer. Therefore, high luminous efficiency can be obtained from the light-emitting and light-receiving element having a buffer layer between the active layer 273 and the light-emitting layer 283R.

[0320] Further, the light-emitting and light-receiving element may not have at least one layer among the hole injection layer 281, the hole transport layer 282, the electron transport layer 284, and the electron injection layer 285. Further, the light-emitting and light-receiving element may have other functional layers such as a hole blocking layer and an electron blocking layer.

[0321] In addition, the light-emitting and light-receiving element may not have the active layer 273 and the light-emitting layer 283R, and may have a layer that serves as both a light-emitting layer and an active layer. As the layer that serves as both a light-emitting layer and an active layer, for example, a layer containing three materials, namely, an n-type semiconductor that can be used for the active layer 273, a p-type semiconductor that can be used for the active layer 273, and a light-emitting substance that can be used for the light-emitting layer 283R, can be used.

[0322] Note that it is preferable that the absorption band on the lowest energy side of the absorption spectrum of the mixed material of the n-type semiconductor and the p-type semiconductor does not overlap with the maximum peak of the emission spectrum (PL spectrum) of the light-emitting substance, and it is more preferable that they are sufficiently separated.

[0323] In the light-emitting and light-receiving element, a conductive film that transmits visible light is used for the electrode on the side where light is extracted. Also, it is preferable to use a conductive film that reflects visible light for the electrode on the side where light is not extracted.

[0324] Since the functions and materials of the respective layers constituting the light-emitting and light-receiving element are the same as those of the respective layers constituting the light-emitting element and the light-receiving element, detailed description thereof is omitted.

[0325] Hereinafter, with reference to FIGS. 19 and 20, the detailed configuration of a display device according to an aspect of the present invention will be described.

[0326] [Display device 100A] FIG. 19A shows a cross-sectional view of the display device 100A.

[0327] The display device 100A includes a light-receiving element 110 and a light-emitting element 190.

[0328] The light-emitting element 190 has a pixel electrode 191, a buffer layer 192, a light-emitting layer 193, a buffer layer 194, and a common electrode 115 laminated in this order. The buffer layer 192 can have one or both of a hole injection layer and a hole transport layer. The light-emitting layer 193 has an organic compound. The buffer layer 194 can have one or both of an electron injection layer and an electron transport layer. The light-emitting element 190 has a function of emitting visible light 121. Note that the display device 100A may further have a light-emitting element having a function of emitting infrared light.

[0329] The light-receiving element 110 has a pixel electrode 191, a buffer layer 182, an active layer 183, a buffer layer 184, and a common electrode 115 laminated in this order. The buffer layer 182 can have a hole transport layer. The active layer 183 has an organic compound. The buffer layer 184 can have an electron transport layer. The light-receiving element 110 has a function of detecting visible light. Note that the light-receiving element 110 may further have a function of detecting infrared light.

[0330] In this embodiment, in both the light-emitting element 190 and the light-receiving element 110, it is described that the pixel electrode 191 functions as an anode and the common electrode 115 functions as a cathode. That is, by driving the light-receiving element 110 with a reverse bias applied between the pixel electrode 191 and the common electrode 115, the display device 100A can detect the light incident on the light-receiving element 110, generate charges, and extract them as a current.

[0331] The pixel electrode 191, the buffer layer 182, the buffer layer 192, the active layer 183, the light-emitting layer 193, the buffer layer 184, the buffer layer 194, and the common electrode 115 may each have a single-layer structure or a laminated structure.

[0332] The pixel electrode 191 is located on the insulating layer 214. Each pixel electrode 191 can be formed of the same material and in the same process. The end of the pixel electrode 191 is covered by the partition wall 216. Two adjacent pixel electrodes 191 are electrically insulated from each other (also referred to as electrically separated) by the partition wall 216.

[0333] As the partition wall 216, an organic insulating film is suitable. Examples of materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene-based resin, phenol resin, and precursors of these resins. The partition wall 216 is a layer that transmits visible light. Instead of the partition wall 216, a partition wall that blocks visible light may be provided.

[0334] The common electrode 115 is a layer that is commonly used for the light receiving element 110 and the light emitting element 190.

[0335] The materials and film thicknesses of a pair of electrodes included in the light receiving element 110 and the light emitting element 190 can be made equal. Thereby, the manufacturing cost of the display device can be reduced and the manufacturing process can be simplified.

[0336] The display device 100A includes a light receiving element 110, a light emitting element 190, a transistor 131, a transistor 132, etc. between a pair of substrates (substrate 151 and substrate 152).

[0337] In the light receiving element 110, the buffer layer 182, the active layer 183, and the buffer layer 184 located between the pixel electrode 191 and the common electrode 115, respectively, can also be referred to as organic layers (layers containing organic compounds). The pixel electrode 191 preferably has a function of reflecting visible light. The common electrode 115 has a function of transmitting visible light. When the light receiving element 110 is configured to detect infrared light, the common electrode 115 has a function of transmitting infrared light. Further, the pixel electrode 191 preferably has a function of reflecting infrared light.

[0338] The light receiving element 110 has a function of detecting light. Specifically, the light receiving element 110 is a photoelectric conversion element that receives the light 122 incident from outside the display device 100A and converts it into an electrical signal. The light 122 can also be the light reflected by the object from the light emitted by the light emitting element 190. Further, the light 122 may be incident on the light receiving element 110 through a lens or the like provided in the display device 100A.

[0339] In the light emitting element 190, the buffer layer 192, the light emitting layer 193, and the buffer layer 194 respectively located between the pixel electrode 191 and the common electrode 115 can also be collectively referred to as the EL layer. Note that the EL layer has at least the light emitting layer 193. As described above, it is preferable that the pixel electrode 191 has a function of reflecting visible light. Also, the common electrode 115 has a function of transmitting visible light. Note that when the display device 100A has a configuration including a light emitting element that emits infrared light, the common electrode 115 has a function of transmitting infrared light. Further, it is preferable that the pixel electrode 191 has a function of reflecting infrared light.

[0340] It is preferable that a microcavity structure is applied to the light emitting element included in the display device of the present embodiment.

[0341] The buffer layer 192 or the buffer layer 194 may have a function as an optical adjustment layer. By varying the film thickness of the buffer layer 192 or the buffer layer 194, it is possible to enhance and extract light of a specific color in each light emitting element.

[0342] The light emitting element 190 has a function of emitting visible light. Specifically, the light emitting element 190 is an electroluminescent element that emits light toward the substrate 152 side by applying a voltage between the pixel electrode 191 and the common electrode 115 (see visible light 121).

[0343] The pixel electrode 191 included in the light receiving element 110 is electrically connected to the source or drain included in the transistor 131 through an opening provided in the insulating layer 214.

[0344] The pixel electrode 191 included in the light-emitting element 190 is electrically connected to the source or drain included in the transistor 132 through an opening provided in the insulating layer 214.

[0345] The transistor 131 and the transistor 132 are in contact with each other on the same layer (the substrate 151 in FIG. 19A).

[0346] At least a part of the circuit electrically connected to the light-receiving element 110 is preferably formed of the same material and in the same process as the circuit electrically connected to the light-emitting element 190. Thereby, compared with the case where the two circuits are formed separately, the thickness of the display device can be reduced and the manufacturing process can be simplified.

[0347] The light-receiving element 110 and the light-emitting element 190 are each preferably covered with a protective layer 116. In FIG. 19A, the protective layer 116 is provided in contact with the common electrode 115. By providing the protective layer 116, entry of impurities such as water into the light-receiving element 110 and the light-emitting element 190 can be suppressed, and the reliability of the light-receiving element 110 and the light-emitting element 190 can be enhanced. Further, the protective layer 116 and the substrate 152 are bonded together by an adhesive layer 142.

[0348] A light-shielding layer 158 is provided on the surface of the substrate 152 on the side of the substrate 151. The light-shielding layer 158 has openings at positions overlapping the light-emitting element 190 and at positions overlapping the light-receiving element 110.

[0349] Here, the light receiving element 110 detects the light reflected by the object from the light emission of the light emitting element 190. However, the light emitted from the light emitting element 190 may be reflected within the display device 100A and incident on the light receiving element 110 without passing through the object. The light shielding layer 158 can suppress the influence of such stray light. For example, when the light shielding layer 158 is not provided, the light 123 emitted from the light emitting element 190 may be reflected by the substrate 152, and the reflected light 124 may be incident on the light receiving element 110. By providing the light shielding layer 158, it is possible to suppress the incident of the reflected light 124 on the light receiving element 110. Thereby, noise can be reduced and the sensitivity of the sensor using the light receiving element 110 can be enhanced.

[0350] As the light shielding layer 158, a material that blocks the light emission from the light emitting element can be used. The light shielding layer 158 preferably absorbs visible light. As the light shielding layer 158, for example, a black matrix can be formed using a metal material, or a resin material containing a pigment (such as carbon black) or a dye. The light shielding layer 158 may have a laminated structure of a red color filter, a green color filter, and a blue color filter.

[0351] [Display device 100B] FIGS. 19B and 19C show cross-sectional views of the display device 100B. In the following description of the display device, the description of the same configuration as the previously described display device may be omitted.

[0352] The display device 100B includes a light emitting element 190B, a light emitting element 190G, and a light emitting and receiving element 190MER.

[0353] The light emitting element 190B has a pixel electrode 191, a buffer layer 192B, a light emitting layer 193B, a buffer layer 194B, and a common electrode 115 laminated in this order. The light emitting element 190B has a function of emitting blue light 121B.

[0354] The light-emitting element 190G includes a pixel electrode 191, a buffer layer 192G, a light-emitting layer 193G, a buffer layer 194G, and a common electrode 115 laminated in this order. The light-emitting element 190G has a function of emitting green light 121G.

[0355] The light-emitting and light-receiving element 190MER includes a pixel electrode 191, a buffer layer 192R, an active layer 183, a light-emitting layer 193R, a buffer layer 194R, and a common electrode 115 laminated in this order. The light-emitting and light-receiving element 190MER has a function of emitting red light 121R and a function of detecting light 122.

[0356] FIG. 19B shows a case where the light-emitting and light-receiving element 190MER functions as a light-emitting element. FIG. 19B shows an example in which the light-emitting element 190B emits blue light, the light-emitting element 190G emits green light, and the light-emitting and light-receiving element 190MER emits red light.

[0357] FIG. 19C shows a case where the light-emitting and light-receiving element 190MER functions as a light-receiving element. FIG. 19C shows an example in which the light-emitting and light-receiving element 190MER detects blue light emitted by the light-emitting element 190B and green light emitted by the light-emitting element 190G.

[0358] The display device 100B includes a light-emitting and light-receiving element 190MER, a light-emitting element 190G, a light-emitting element 190B, a transistor 132, etc. between a pair of substrates (substrate 151 and substrate 152).

[0359] The pixel electrode 191 is located on the insulating layer 214. Two adjacent pixel electrodes 191 are electrically insulated from each other by a partition wall 216. The pixel electrode 191 is electrically connected to the source or drain of the transistor 132 through an opening provided in the insulating layer 214.

[0360] The light-emitting and light-receiving element and the light-emitting element are preferably each covered with a protective layer 116. Further, the protective layer 116 and the substrate 152 are bonded together by an adhesive layer 142. A light-shielding layer 158 is provided on the surface of the substrate 152 on the side of the substrate 151.

[0361] [Display device 100C] FIG. 20A shows a cross-sectional view of the display device 100C.

[0362] The display device 100C includes a light-receiving element 110 and a light-emitting element 190.

[0363] The light-emitting element 190 includes a pixel electrode 191, a common layer 112, a light-emitting layer 193, a common layer 114, and a common electrode 115 in this order. The common layer 112 can include one or both of a hole injection layer and a hole transport layer. The light-emitting layer 193 includes an organic compound. The common layer 114 can include one or both of an electron injection layer and an electron transport layer. The light-emitting element 190 has a function of emitting visible light. Note that the display device 100C may further include a light-emitting element having a function of emitting infrared light.

[0364] The light-receiving element 110 includes a pixel electrode 191, a common layer 112, an active layer 183, a common layer 114, and a common electrode 115 laminated in this order. The active layer 183 includes an organic compound. The light-receiving element 110 has a function of detecting visible light. Note that the light-receiving element 110 may further have a function of detecting infrared light.

[0365] The pixel electrode 191, the common layer 112, the active layer 183, the light-emitting layer 193, the common layer 114, and the common electrode 115 may each have a single-layer structure or a laminated structure.

[0366] The pixel electrode 191 is located on the insulating layer 214. Two adjacent pixel electrodes 191 are electrically insulated from each other by a partition wall 216. The pixel electrode 191 is electrically connected to a source or a drain of the transistor 132 through an opening provided in the insulating layer 214.

[0367] The common layer 112, the common layer 114, and the common electrode 115 are layers that are commonly used for the light-receiving element 110 and the light-emitting element 190. By making at least a part of the layers constituting the light-receiving element 110 and the light-emitting element 190 have a common configuration, the manufacturing process of the display device can be reduced, which is preferable.

[0368] The display device 100C includes a light-receiving element 110, a light-emitting element 190, a transistor 131, a transistor 132, etc. between a pair of substrates (substrate 151 and substrate 152).

[0369] The light-receiving element 110 and the light-emitting element 190 are each preferably covered by a protective layer 116. Also, the protective layer 116 and the substrate 152 are bonded together by an adhesive layer 142.

[0370] A resin layer 159 is provided on the surface of the substrate 152 on the side of the substrate 151. The resin layer 159 is provided at a position overlapping the light-emitting element 190 and is not provided at a position overlapping the light-receiving element 110.

[0371] The resin layer 159 can be configured, for example, as shown in FIG. 20B, to be provided at a position overlapping the light-emitting element 190 and to have an opening 159p at a position overlapping the light-receiving element 110. Or, the resin layer 159 can be configured, for example, as shown in FIG. 20C, to be provided in an island shape at a position overlapping the light-emitting element 190 and not to be provided at a position overlapping the light-receiving element 110.

[0372] A light-shielding layer 158 is provided on the surface of the substrate 152 on the side of the substrate 151 and on the surface of the resin layer 159 on the side of the substrate 151. The light-shielding layer 158 has openings at positions overlapping the light-emitting element 190 and at positions overlapping the light-receiving element 110.

[0373] Here, the light receiving element 110 detects the light reflected by the object from the light emission of the light emitting element 190. However, the light emission of the light emitting element 190 may be reflected within the display device 100C and incident on the light receiving element 110 without passing through the object. The light shielding layer 158 can absorb such stray light and reduce the stray light incident on the light receiving element 110. For example, the light shielding layer 158 can absorb the stray light 123a reflected from the surface of the substrate 151 on the substrate 151 side of the substrate 152 through the resin layer 159. Further, the light shielding layer 158 can absorb the stray light 123b before reaching the resin layer 159. Thereby, the stray light incident on the light receiving element 110 can be reduced. Therefore, noise can be reduced and the sensitivity of the sensor using the light receiving element 110 can be enhanced. In particular, it is preferable that the light shielding layer 158 is located at a position close to the light emitting element 190 because the stray light can be further reduced. Also, when the light shielding layer 158 is located at a position close to the light emitting element 190, the viewing angle dependency of the display can be suppressed, which is also preferable from the viewpoint of improving the display quality.

[0374] Also, by providing the light shielding layer 158, the range in which the light receiving element 110 detects light can be controlled. When the light shielding layer 158 is located at a position far from the light receiving element 110, the imaging range becomes narrow and the imaging resolution can be enhanced.

[0375] When the resin layer 159 has an opening, the light shielding layer 158 preferably covers at least a part of the opening and at least a part of the side surface of the resin layer 159 exposed at the opening.

[0376] When the resin layer 159 is provided in an island shape, the light shielding layer 158 preferably covers at least a part of the side surface of the resin layer 159.

[0377] Thus, since the light-shielding layer 158 is provided along the shape of the resin layer 159, the distance from the light-shielding layer 158 to the light-emitting element 190 (specifically, the light-emitting region of the light-emitting element 190) is shorter than the distance from the light-shielding layer 158 to the light-receiving element 110 (specifically, the light-receiving region of the light-receiving element 110). Thereby, it is possible to reduce the noise of the sensor, increase the resolution of imaging, and suppress the viewing angle dependency of display. Therefore, both the display quality and the imaging quality in the display device can be enhanced.

[0378] The resin layer 159 is a layer that transmits the light emitted by the light-emitting element 190. Examples of the material of the resin layer 159 include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene-based resin, phenol resin, and precursors of these resins. Note that the structure provided between the substrate 152 and the light-shielding layer 158 is not limited to a resin layer, and an inorganic insulating film or the like may be used. The greater the thickness of the structure, the greater the difference between the distance from the light-shielding layer to the light-receiving element and the distance from the light-shielding layer to the light-emitting element. Since an organic insulating film such as resin can be easily formed thick, it is suitable as the structure.

[0379] In order to compare the distance from the light-shielding layer 158 to the light-receiving element 110 and the distance from the light-shielding layer 158 to the light-emitting element 190, for example, the shortest distance L1 from the end portion of the light-shielding layer 158 on the light-receiving element 110 side to the common electrode 115 and the shortest distance L2 from the end portion of the light-shielding layer 158 on the light-emitting element 190 side to the common electrode 115 can be used. By the shortest distance L2 being shorter than the shortest distance L1, stray light from the light-emitting element 190 can be suppressed, and the sensitivity of the sensor using the light-receiving element 110 can be increased. In addition, the viewing angle dependency of the display can be suppressed. By the shortest distance L1 being longer than the shortest distance L2, the imaging range of the light-receiving element 110 can be narrowed, and the resolution of imaging can be increased.

[0380] Further, by making the portion of the adhesive layer 142 that overlaps the light-receiving element 110 thicker than the portion that overlaps the light-emitting element 190, a difference can be created between the distance from the light-shielding layer 158 to the light-receiving element 110 and the distance from the light-shielding layer 158 to the light-emitting element 190.

[0381] Hereinafter, with reference to FIGS. 21 to 24, a more detailed configuration of the display device according to one embodiment of the present invention will be described.

[0382] [Display device 100D] FIG. 21 shows a perspective view of the display device 100D, and FIG. 22 shows a cross-sectional view of the display device 100D.

[0383] The display device 100D has a configuration in which a substrate 152 and a substrate 151 are bonded together. In FIG. 21, the substrate 152 is indicated by a broken line.

[0384] The display device 100D includes a display unit 162, a circuit 164, a wiring 165, etc. FIG. 21 shows an example in which an IC (integrated circuit) 173 and an FPC 172 are mounted on the display device 100D. Therefore, the configuration shown in FIG. 21 can also be referred to as a display module having the display device 100D, an IC, and an FPC.

[0385] As the circuit 164, for example, a scanning line driving circuit can be used.

[0386] The wiring 165 has a function of supplying signals and power to the display unit 162 and the circuit 164. The signals and power are input to the wiring 165 from the outside via the FPC 172 or from the IC 173 to the wiring 165.

[0387] FIG. 21 shows an example in which an IC 173 is provided on a substrate 151 by a COG (Chip On Glass) method, a COF (Chip on Film) method, or the like. As the IC 173, an IC having, for example, a scanning line driving circuit or a signal line driving circuit can be applied. Note that the display device 100D and the display module may be configured not to include an IC. Further, the IC may be mounted on an FPC by a COF method or the like.

[0388] FIG. 22 shows an example of a cross section when a part of the region including the FPC 172, a part of the region including the circuit 164, a part of the region including the display unit 162, and a part of the region including the end portion of the display device 100D shown in FIG. 21 are each cut.

[0389] The display device 100D shown in FIG. 22 includes a transistor 241, a transistor 245, a transistor 246, a transistor 247, a light-emitting element 190B, a light-emitting element 190G, a light-receiving and light-emitting element 190MER, etc. between a substrate 151 and a substrate 152.

[0390] The substrate 152 and the protective layer 116 are bonded together by an adhesive layer 142. For sealing the light-emitting element 190B, the light-emitting element 190G, and the light-receiving and light-emitting element 190MER, a solid sealing structure, a hollow sealing structure, or the like can be applied. In FIG. 22, the space surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 is sealed by the adhesive layer 142, and a solid sealing structure is applied.

[0391] The light-emitting element 190B has a stacked structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193B, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 191 is connected to a conductive layer 222b included in the transistor 247 through an opening provided in the insulating layer 214. The transistor 247 has a function of controlling driving of the light-emitting element 190B. The end portion of the pixel electrode 191 is covered by a partition wall 216. The pixel electrode 191 contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light.

[0392] The light-emitting element 190G has a stacked structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193G, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 191 is connected to a conductive layer 222b included in the transistor 246 through an opening provided in the insulating layer 214. The transistor 246 has a function of controlling the driving of the light-emitting element 190G.

[0393] The light-emitting and receiving element 190MER has a stacked structure in which a pixel electrode 191, a common layer 112, an active layer 183, a light-emitting layer 193R, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 191 is electrically connected to a conductive layer 222b included in the transistor 245 through an opening provided in the insulating layer 214. The transistor 245 has a function of controlling the driving of the light-emitting and receiving element 190MER.

[0394] The light emitted from the light-emitting element 190B, the light-emitting element 190G, and the light-emitting and receiving element 190MER is emitted toward the substrate 152 side. Further, light is incident on the light-emitting and receiving element 190MER through the substrate 152 and the adhesive layer 142. It is preferable to use a material having high transparency to visible light for the substrate 152 and the adhesive layer 142.

[0395] The pixel electrodes 191 included in the light-emitting element 190B, the light-emitting element 190G, and the light-emitting and receiving element 190MER can be manufactured from the same material and by the same process. The common layer 112, the common layer 114, and the common electrode 115 are commonly used for the light-emitting element 190B, the light-emitting element 190G, and the light-emitting and receiving element 190MER. The light-emitting and receiving element 190MER has a configuration in which an active layer 183 is added to the configuration of a light-emitting element that emits red light. Further, the light-emitting element 190B, the light-emitting element 190G, and the light-emitting and receiving element 190MER can have the same configuration except that the configurations of the active layer 183 and the light-emitting layers 193 of different colors are different. Thereby, a light-receiving function can be added to the display unit 162 of the display device 100D without significantly increasing the manufacturing process.

[0396] On the surface of the substrate 152 on the side of the substrate 151, a light-shielding layer 158 is provided. The light-shielding layer 158 has openings at positions overlapping with each of the light-emitting element 190B, the light-emitting element 190G, and the light-receiving and emitting element 190MER. By providing the light-shielding layer 158, the range in which the light-receiving and emitting element 190MER detects light can be controlled. As described above, it is preferable to control the light incident on the light-receiving and emitting element by adjusting the position of the opening of the light-shielding layer provided at the position overlapping with the light-receiving and emitting element 190MER. Further, by having the light-shielding layer 158, it is possible to suppress light from directly entering the light-receiving and emitting element 190MER from the light-emitting element 190 without passing through an object. Therefore, a sensor with less noise and high sensitivity can be realized.

[0397] The transistors 241, 245, 246, and 247 are all formed on the substrate 151. These transistors can be manufactured by the same material and the same process.

[0398] On the substrate 151, an insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided in this order. A part of the insulating layer 211 functions as a gate insulating layer of each transistor. A part of the insulating layer 213 functions as a gate insulating layer of each transistor. The insulating layer 215 is provided so as to cover the transistors. The insulating layer 214 is provided so as to cover the transistors and has a function as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0399] It is preferable to use a material in which impurities such as water and hydrogen hardly diffuse in at least one of the insulating layers covering the transistors. Thereby, the insulating layer can function as a barrier layer. With such a configuration, it is possible to effectively suppress the diffusion of impurities from the outside into the transistors, and improve the reliability of the display device.

[0400] As the insulating layers 211, 213, and 215, it is preferable to use inorganic insulating films respectively. As the inorganic insulating film, for example, inorganic insulating films such as a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, and an aluminum nitride film can be used. Further, a hafnium oxide film, a hafnium oxynitride film, a hafnium silicon oxynitride film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may be used. Further, two or more of the above-described insulating films may be laminated and used. Note that an underlayer film may be provided between the substrate 151 and the transistor. The above-described inorganic insulating film can also be used for the underlayer film.

[0401] Here, the organic insulating film often has lower barrier properties than the inorganic insulating film. Therefore, the organic insulating film preferably has an opening near the end of the display device 100D. Thereby, it is possible to suppress impurities from entering through the organic insulating film from the end of the display device 100D. Alternatively, the organic insulating film may be formed such that the end of the organic insulating film is inside the end of the display device 100D so that the organic insulating film is not exposed at the end of the display device 100D.

[0402] The insulating layer 214 that functions as a planarization layer is preferably an organic insulating film. Examples of materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene-based resin, phenol resin, and precursors of these resins.

[0403] By providing the protective layer 116 that covers the light-emitting element 190B, the light-emitting element 190G, and the light-emitting and receiving element 190MER, it is possible to suppress impurities such as water from entering the light-emitting element 190B, the light-emitting element 190G, and the light-emitting and receiving element 190MER, and to improve the reliability of the light-emitting element 190B, the light-emitting element 190G, and the light-emitting and receiving element 190MER.

[0404] In the region 228 shown in FIG. 22, an opening is formed in the insulating layer 214. Thereby, even when an organic insulating film is used for the insulating layer 214, it is possible to suppress impurities from entering the display unit 162 from the outside through the insulating layer 214. Therefore, the reliability of the display device 100D can be improved.

[0405] In the region 228 near the end of the display device 100D, it is preferable that the insulating layer 215 and the protective layer 116 are in contact with each other through the opening of the insulating layer 214. In particular, it is preferable that the inorganic insulating film of the insulating layer 215 and the inorganic insulating film of the protective layer 116 are in contact with each other. Thereby, it is possible to suppress impurities from entering the display unit 162 from the outside through the organic insulating film. Therefore, the reliability of the display device 100D can be improved.

[0406] The protective layer 116 may be a single layer or a laminated structure. For example, the protective layer 116 may have a laminated structure of an organic insulating film and an inorganic insulating film. At this time, it is preferable that the end of the inorganic insulating film extends outside the end of the organic insulating film.

[0407] The transistor 241, the transistor 245, the transistor 246, and the transistor 247 include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is given to a plurality of layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0408] The structure of the transistor included in the display device of the present embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Further, either a top gate type or a bottom gate type transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0409] For transistors 241, 245, 246, and 247, a configuration is applied in which the semiconductor layer in which the channel is formed is sandwiched between two gates. The transistor may be driven by connecting the two gates and supplying the same signal thereto. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0410] The crystallinity of the semiconductor material used for the transistor is also not particularly limited, and any of an amorphous semiconductor, a semiconductor having crystallinity, or a single crystal semiconductor (microcrystalline semiconductor, polycrystalline semiconductor, or a semiconductor having a crystal region in part) may be used. It is preferable to use a semiconductor having crystallinity because deterioration of transistor characteristics can be suppressed.

[0411] The semiconductor layer of the transistor preferably has a metal oxide (also referred to as an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may contain silicon. Examples of the silicon include amorphous silicon, crystalline silicon (such as low-temperature polysilicon and single crystal silicon).

[0412] The semiconductor layer preferably has, for example, indium, M (where M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0413] In particular, as the semiconductor layer, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO).

[0414] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of the atomic ratio of the metal elements in such an In-M-Zn oxide include a composition of In:M:Zn = 1:1:1 or in the vicinity thereof, In:M:Zn = 1:1:1.2 or in the vicinity thereof, In:M:Zn = 2:1:3 or in the vicinity thereof, In:M:Zn = 3:1:2 or in the vicinity thereof, In:M:Zn = 4:2:3 or in the vicinity thereof, In:M:Zn = 4:2:4.1 or in the vicinity thereof, In:M:Zn = 5:1:3 or in the vicinity thereof, In:M:Zn = 5:1:6 or in the vicinity thereof, In:M:Zn = 5:1:7 or in the vicinity thereof, In:M:Zn = 5:1:8 or in the vicinity thereof, In:M:Zn = 6:1:6 or in the vicinity thereof, In:M:Zn = 5:2:5 or in the vicinity thereof, etc. The composition in the vicinity includes a range of ±30% of the desired atomic ratio.

[0415] For example, when the atomic ratio is described as In:Ga:Zn = 4:2:3 or a composition in the vicinity thereof, when the atomic ratio of In is 4, it includes cases where the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or more and 4 or less. Further, when the atomic ratio is described as In:Ga:Zn = 5:1:6 or a composition in the vicinity thereof, when the atomic ratio of In is 5, it includes cases where the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is 5 or more and 7 or less. Further, when the atomic ratio is described as In:Ga:Zn = 1:1:1 or a composition in the vicinity thereof, when the atomic ratio of In is 1, it includes cases where the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0416] The transistors included in circuit 164 and the transistors included in display unit 162 may have the same structure or different structures. The structures of the plurality of transistors included in circuit 164 may all be the same or there may be two or more types. Similarly, the structures of the plurality of transistors included in display unit 162 may all be the same or there may be two or more types.

[0417] In a region of substrate 151 where substrate 152 does not overlap, connection portion 244 is provided. In connection portion 244, wiring 165 is electrically connected to FPC 172 via conductive layer 166 and connection layer 242. On the upper surface of connection portion 244, conductive layer 166 obtained by processing the same conductive film as pixel electrode 191 is exposed. Thereby, connection portion 244 and FPC 172 can be electrically connected via connection layer 242.

[0418] Various optical members can be arranged outside substrate 152. Examples of the optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an antireflection layer, and a condensing film. Further, outside substrate 152, an antistatic film for suppressing dust adhesion, a water-repellent film for making it difficult for dirt to adhere, a hard coat film for suppressing the occurrence of scratches during use, a shock absorption layer, etc. may be arranged.

[0419] For the substrate 151 and the substrate 152, glass, quartz, ceramic, sapphire, resin, etc. can be used respectively. When a flexible material is used for the substrate 151 and the substrate 152, the flexibility of the display device can be enhanced.

[0420] As the adhesive layer, various curable adhesives such as photocurable adhesives such as ultraviolet curable type, reaction curable adhesives, thermosetting adhesives, anaerobic adhesives, etc. can be used. Examples of these adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, EVA (ethylene vinyl acetate) resin, etc. In particular, materials with low moisture permeability such as epoxy resin are preferred. Also, a two-component mixed resin may be used. Further, an adhesive sheet or the like may be used.

[0421] As the connection layer, an anisotropic conductive film (ACF: Anisotropic Conductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), etc. can be used.

[0422] For the configurations and materials of the light-emitting elements 190G, 190B, and the light-emitting and receiving element 190MER, the above description can be referred to.

[0423] In addition to the gate, source, and drain of the transistor, materials that can be used for the conductive layers such as various wirings and electrodes constituting the display device include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys mainly composed of the metals. Films containing these materials can be used as a single layer or in a laminated structure.

[0424] In addition, as the conductive material having translucency, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, or graphene can be used. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing the metal materials can be used. Alternatively, nitrides of the metal materials (for example, titanium nitride) may be used. When using a metal material, an alloy material (or a nitride thereof), it is preferably made thin enough to have translucency. In addition, a laminated film of the above materials can be used as the conductive layer. For example, using a laminated film of an alloy of silver and magnesium and indium tin oxide is preferable because the conductivity can be enhanced. These can also be used for conductive layers such as various wirings and electrodes constituting the display device, or conductive layers (conductive layers functioning as pixel electrodes or common electrodes, etc.) of light-emitting elements and light-receiving elements (or light-emitting and receiving elements).

[0425] Examples of the insulating material that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxynitride, silicon nitride, and aluminum oxide.

[0426] [Display Device 100E] FIGS. 23 and 24A show cross-sectional views of the display device 100E. The perspective view of the display device 100E is the same as that of the display device 100D (FIG. 18). FIG. 23 shows an example of a cross-section when a part of the region including the FPC 172, a part of the circuit 164, and a part of the display unit 162 of the display device 100E are each cut. FIG. 24A shows an example of a cross-section when a part of the display unit 162 of the display device 100E is cut. In FIG. 23, an example of a cross-section when a region including the light-receiving element 110 and the light-emitting element 190R that emits red light in the display unit 162 is cut is shown. In FIG. 24A, an example of a cross-section when a region including the light-emitting element 190G that emits green light and the light-emitting element 190B that emits blue light in the display unit 162 is cut is shown.

[0427] The display device 100E shown in FIGS. 23 and 24A includes a transistor 243, a transistor 248, a transistor 249, a transistor 240, a light-emitting element 190R, a light-emitting element 190G, a light-emitting element 190B, a light-receiving element 110, etc. between a substrate 153 and a substrate 154.

[0428] The resin layer 159 and the common electrode 115 are adhered via an adhesive layer 142, and a solid encapsulation structure is applied to the display device 100E.

[0429] The substrate 153 and the insulating layer 212 are bonded by an adhesive layer 155. The substrate 154 and the insulating layer 157 are bonded by an adhesive layer 156.

[0430] As a method for manufacturing the display device 100E, first, a first manufacturing substrate provided with an insulating layer 212, each transistor, a light-receiving element 110, each light-emitting element, etc., and a second manufacturing substrate provided with an insulating layer 157, a resin layer 159, a light-shielding layer 158, etc. are bonded by an adhesive layer 142. Then, the substrate 153 is attached to the exposed surface after peeling off the first manufacturing substrate, and the substrate 154 is attached to the exposed surface after peeling off the second manufacturing substrate, thereby transposing each component formed on the first manufacturing substrate and the second manufacturing substrate to the substrates 153 and 154. The substrates 153 and 154 preferably each have flexibility. Thereby, the flexibility of the display device 100E can be enhanced.

[0431] For the insulating layer 212 and the insulating layer 157, an inorganic insulating film that can be used for the insulating layer 211, the insulating layer 213, and the insulating layer 215 can be used respectively.

[0432] The light-emitting element 190R has a stacked structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193R, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214b side. The pixel electrode 191 is connected to the conductive layer 169 through an opening provided in the insulating layer 214b. The conductive layer 169 is connected to the conductive layer 222b included in the transistor 248 through an opening provided in the insulating layer 214a. The conductive layer 222b is connected to the low-resistance region 231n through an opening provided in the insulating layer 215. That is, the pixel electrode 191 is electrically connected to the transistor 248. The transistor 248 has a function of controlling the driving of the light-emitting element 190R.

[0433] Similarly, the light-emitting element 190G has a stacked structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193G, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214b side. The pixel electrode 191 is electrically connected to the low-resistance region 231n of the transistor 249 through the conductive layer 169 and the conductive layer 222b of the transistor 249. That is, the pixel electrode 191 is electrically connected to the transistor 249. The transistor 249 has a function of controlling the driving of the light-emitting element 190G.

[0434] And the light-emitting element 190B has a stacked structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193B, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214b side. The pixel electrode 191 is electrically connected to the low-resistance region 231n of the transistor 240 through the conductive layer 169 and the conductive layer 222b of the transistor 240. That is, the pixel electrode 191 is electrically connected to the transistor 240. The transistor 240 has a function of controlling the driving of the light-emitting element 190B.

[0435] The light-receiving element 110 has a stacked structure in which a pixel electrode 191, a common layer 112, an active layer 183, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214b side.

[0436] The end portion of the pixel electrode 191 is covered by the partition wall 216. The pixel electrode 191 contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light.

[0437] The light emitted by the light-emitting elements 190R, 190G, and 190B is emitted toward the substrate 154 side. Further, light is incident on the light-receiving element 110 through the substrate 154 and the adhesive layer 142. It is preferable to use a material having high transmittance for visible light for the substrate 154.

[0438] Each pixel electrode 191 can be manufactured using the same material and the same process. The common layer 112, the common layer 114, and the common electrode 115 are commonly used for the light-receiving element 110 and the light-emitting elements 190R, 190G, and 190B. The light-receiving element 110 and the light-emitting elements of each color can have the same configuration except that the configuration of the active layer 183 and the light-emitting layer is different. Thereby, the light-receiving element 110 can be incorporated in the display device 100E without significantly increasing the manufacturing process.

[0439] On the surface of the insulating layer 157 on the substrate 153 side, a resin layer 159 and a light-shielding layer 158 are provided. The resin layer 159 is provided at a position overlapping with the light-emitting elements 190R, 190G, and 190B, and is not provided at a position overlapping with the light-receiving element 110. The light-shielding layer 158 is provided to cover the surface of the insulating layer 157 on the substrate 153 side, the side surface of the resin layer 159, and the surface of the resin layer 159 on the substrate 153 side. The light-shielding layer 158 has openings at positions overlapping with the light-receiving element 110 and at positions overlapping with each of the light-emitting elements 190R, 190G, and 190B. By providing the light-shielding layer 158, the range in which the light-receiving element 110 detects light can be controlled. Also, by having the light-shielding layer 158, it is possible to suppress light from directly entering the light-receiving element 110 from the light-emitting elements 190R, 190G, and 190B without passing through an object. Therefore, a sensor with less noise and high sensitivity can be realized. By providing the resin layer 159, the distance from the light-shielding layer 158 to each color light-emitting element is shorter than the distance from the light-shielding layer 158 to the light-receiving element 110. Thereby, while reducing the noise of the sensor, it is possible to suppress the viewing angle dependency of the display. Therefore, both the display quality and the imaging quality can be improved.

[0440] As shown in FIG. 23, the partition wall 216 has an opening between the light-receiving element 110 and the light-emitting element 190R. A light-shielding layer 219a is provided so as to fill the opening. The light-shielding layer 219a is located between the light-receiving element 110 and the light-emitting element 190R. The light-shielding layer 219a absorbs the light emitted by the light-emitting element 190R. Thereby, stray light incident on the light-receiving element 110 can be suppressed.

[0441] The spacer 219b is provided on the partition wall 216 and is located between the light-emitting element 190G and the light-emitting element 190B. It is preferable that the upper surface of the spacer 219b is closer to the light-shielding layer 158 than the upper surface of the light-shielding layer 219a. For example, it is preferable that the sum of the height (thickness) of the partition wall 216 and the height (thickness) of the spacer 219b is larger than the height (thickness) of the light-shielding layer 219a. This facilitates filling the adhesive layer 142. As shown in FIG. 24A, in the portion where the spacer 219b and the light-shielding layer 158 overlap, the light-shielding layer 158 may be in contact with the common electrode 115 (or the protective layer).

[0442] In the region of the substrate 153 where the substrate 154 does not overlap, a connection portion 244 is provided. In the connection portion 244, the wiring 165 is electrically connected to the FPC 172 via the conductive layer 167, the conductive layer 166, and the connection layer 242. The conductive layer 167 can be obtained by processing the same conductive film as the conductive layer 169. On the upper surface of the connection portion 244, the conductive layer 166 obtained by processing the same conductive film as the pixel electrode 191 is exposed. Thereby, the connection portion 244 and the FPC 172 can be electrically connected via the connection layer 242.

[0443] The transistors 243, 248, 249, and 240 have a semiconductor layer having a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a channel formation region 231i, and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 that functions as a gate insulating layer, a conductive layer 223 that functions as a gate, and an insulating layer 215 that covers the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located between the conductive layer 223 and the channel formation region 231i.

[0444] The conductive layer 222a and the conductive layer 222b are each connected to the low-resistance region 231n through an opening provided in the insulating layer 215. Of the conductive layer 222a and the conductive layer 222b, one functions as a source and the other functions as a drain.

[0445] In FIGS. 23 and 24A, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 and does not overlap with the low resistance region 231n. For example, by processing the insulating layer 225 using the conductive layer 223 as a mask, the structures shown in FIGS. 23 and 24A can be fabricated. In FIGS. 23 and 24A, an insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are respectively connected to the low resistance region 231n through the openings in the insulating layer 215. Further, an insulating layer covering the transistor may be provided.

[0446] On the other hand, FIG. 24B shows an example in which the insulating layer 225 covers the upper surface and the side surface of the semiconductor layer. The conductive layer 222a and the conductive layer 222b are respectively connected to the low resistance region 231n through the openings provided in the insulating layer 225 and the insulating layer 215.

[0447] This embodiment can be implemented by appropriately combining at least a part thereof with other embodiments described in this specification.

[0448] (Embodiment 3) In this embodiment, a metal oxide (also referred to as an oxide semiconductor) that can be used for the OS transistor described in the above embodiment will be described.

[0449] The metal oxide preferably contains at least indium or zinc. Particularly preferably, it contains indium and zinc. In addition to these, it is preferable that aluminum, gallium, yttrium, tin, etc. are contained. Also, one or more selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc. may be contained.

[0450] In addition, the metal oxide can be formed by a sputtering method, a chemical vapor deposition (CVD) method such as a metal organic chemical vapor deposition (MOCVD) method, an atomic layer deposition (ALD) method, or the like.

[0451] <Classification of crystal structures> Examples of the crystal structure of the oxide semiconductor include amorphous (including completely amorphous), CAAC (c-axis-aligned crystalline), nc (nanocrystalline), CAC (cloud-aligned composite), single crystal, and poly crystal.

[0452] Note that the crystal structure of the film or substrate can be evaluated using an X-ray diffraction (XRD) spectrum. For example, it can be evaluated using the XRD spectrum obtained by grazing-incidence XRD (GIXD) measurement. Note that the GIXD method is also referred to as the thin film method or the Seemann-Bohlin method.

[0453] For example, in a quartz glass substrate, the shape of the peak in the XRD spectrum is almost symmetric about the left and right. On the other hand, in an IGZO film having a crystal structure, the shape of the peak in the XRD spectrum is asymmetric about the left and right. The fact that the shape of the peak in the XRD spectrum is asymmetric about the left and right indicates the presence of crystals in the film or the substrate. In other words, if the shape of the peak in the XRD spectrum is not symmetric about the left and right, it cannot be said that the film or the substrate is in an amorphous state.

[0454] In addition, the crystal structure of a film or a substrate can be evaluated by a diffraction pattern (also referred to as a nano beam electron diffraction pattern) observed by nano beam electron diffraction (NBED). For example, in the diffraction pattern of a quartz glass substrate, a halo is observed, and it can be confirmed that the quartz glass is in an amorphous state. Also, in the diffraction pattern of an IGZO film formed at room temperature, a spot-like pattern is observed instead of a halo. Therefore, it is presumed that the IGZO film formed at room temperature is in an intermediate state that is neither crystalline nor amorphous, and it cannot be concluded that it is in an amorphous state.

[0455] [[Structure of Oxide Semiconductor]] Note that when focusing on the structure, oxide semiconductors may be classified differently from the above. For example, oxide semiconductors can be divided into single crystal oxide semiconductors and other non-single crystal oxide semiconductors. Examples of non-single crystal oxide semiconductors include the above-mentioned CAAC-OS and nc-OS. In addition, non-single crystal oxide semiconductors include polycrystalline oxide semiconductors, pseudo-amorphous oxide semiconductors (a-like OS: amorphous-like oxide semiconductor), amorphous oxide semiconductors, and the like.

[0456] Here, the details of the above-mentioned CAAC-OS, nc-OS, and a-like OS will be described.

[0457] [CAAC-OS] CAAC-OS is an oxide semiconductor having a plurality of crystal regions, and the plurality of crystal regions are such that the c-axis is oriented in a specific direction. The specific direction is the thickness direction of the CAAC-OS film, the normal direction of the surface on which the CAAC-OS film is formed, or the normal direction of the surface of the CAAC-OS film. Further, a crystal region is a region having periodicity in the atomic arrangement. When the atomic arrangement is regarded as a lattice arrangement, a crystal region is also a region where the lattice arrangements are aligned. Furthermore, CAAC-OS has a region where a plurality of crystal regions are connected in the a-b plane direction, and this region may have strain. The strain refers to a portion where the orientation of the lattice arrangement changes between a region where the lattice arrangements are aligned and another region where the lattice arrangements are aligned in a region where a plurality of crystal regions are connected. That is, CAAC-OS is an oxide semiconductor in which the c-axis is oriented and there is no clear orientation in the a-b plane direction.

[0458] Each of the plurality of crystal regions is composed of one or a plurality of minute crystals (crystals having a maximum diameter of less than 10 nm). When a crystal region is composed of one minute crystal, the maximum diameter of the crystal region is less than 10 nm. Also, when a crystal region is composed of a number of minute crystals, the size of the crystal region may be on the order of several tens of nm.

[0459] Also, in In-M-Zn oxide (the element M is one or a plurality of elements selected from aluminum, gallium, yttrium, tin, titanium, etc.), CAAC-OS tends to have a layered crystal structure (also referred to as a layered structure) in which a layer containing indium (In) and oxygen (hereinafter, In layer) and a layer containing the element M, zinc (Zn), and oxygen (hereinafter, (M,Zn) layer) are laminated. Note that indium and the element M are mutually substitutable. Therefore, the (M,Zn) layer may contain indium. Also, the In layer may contain the element M. Note that the In layer may also contain Zn. The layered structure is observed as a lattice image, for example, in a high-resolution TEM (Transmission Electron Microscope) image.

[0460] When performing a structural analysis on a CAAC-OS film using, for example, an XRD apparatus, in an Out-of-plane XRD measurement using a θ / 2θ scan, a peak indicating c-axis orientation is detected at 2θ = 31° or in its vicinity. Note that the position of the peak indicating c-axis orientation (the value of 2θ) may vary depending on the type and composition of the metal elements constituting CAAC-OS.

[0461] Also, for example, in the electron diffraction pattern of a CAAC-OS film, a plurality of bright spots (spots) are observed. Note that one spot and another spot are observed at point-symmetric positions with the spot of the incident electron beam transmitted through the sample (also called the direct spot) as the center of symmetry.

[0462] When observing the crystal region from the above specific direction, the lattice arrangement within the crystal region is based on a hexagonal lattice, but the unit cell is not necessarily a regular hexagon and may be a non-regular hexagon. Also, in the above distortion, there may be lattice arrangements such as pentagons and heptagons. Note that in CAAC-OS, even in the vicinity of the distortion, a clear grain boundary cannot be confirmed. That is, it can be seen that the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This is presumably because CAAC-OS can tolerate the distortion due to the fact that the arrangement of oxygen atoms is not dense in the a-b plane direction or the interatomic bond distance changes due to the substitution of metal atoms.

[0463] Note that a crystal structure in which a clear grain boundary is confirmed is called a so-called polycrystal. Grain boundaries can become recombination centers, and carriers are likely to be captured, causing a decrease in the on-current of the transistor and a decrease in the field-effect mobility. Therefore, CAAC-OS in which a clear grain boundary is not confirmed is one of the crystalline oxides having a crystal structure suitable for the semiconductor layer of a transistor. Note that for forming CAAC-OS, a configuration having Zn is preferable. For example, In-Zn oxide and In-Ga-Zn oxide are preferable because they can suppress the generation of grain boundaries more than In oxide.

[0464] CAAC-OS is an oxide semiconductor with high crystallinity and no distinct crystal grain boundaries. Therefore, it can be said that in CAAC-OS, a decrease in electron mobility due to crystal grain boundaries is less likely to occur. Also, since the crystallinity of an oxide semiconductor may decrease due to impurity incorporation, defect generation, etc., CAAC-OS can also be said to be an oxide semiconductor with few impurities and defects (such as oxygen deficiencies). Therefore, the physical properties of the oxide semiconductor having CAAC-OS are stable. For this reason, the oxide semiconductor having CAAC-OS is heat-resistant and highly reliable. Also, CAAC-OS is stable against high temperatures (so-called thermal budget) in the manufacturing process. Therefore, when CAAC-OS is used for an OS transistor, it becomes possible to expand the degree of freedom in the manufacturing process.

[0465] [nc-OS] nc-OS has periodicity in the atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less). In other words, nc-OS has minute crystals. Note that since the size of the minute crystal is, for example, 1 nm or more and 10 nm or less, particularly 1 nm or more and 3 nm or less, the minute crystal is also referred to as a nanocrystal. Also, nc-OS has no regularity in the crystal orientation between different nanocrystals. Therefore, there is no orientation in the entire film. Therefore, depending on the analysis method, nc-OS may not be distinguishable from a-like OS, an amorphous oxide semiconductor, etc. For example, when structural analysis is performed on an nc-OS film using an XRD apparatus, no peak indicating crystallinity is detected in the out-of-plane XRD measurement using θ / 2θ scan. Also, when electron beam diffraction (also referred to as limited field electron beam diffraction) using an electron beam with a probe diameter larger than the nanocrystal (for example, 50 nm or more) is performed on an nc-OS film, a diffraction pattern such as a halo pattern is observed. On the other hand, when electron beam diffraction (also referred to as nanobeam electron beam diffraction) using an electron beam with a probe diameter close to or smaller than the nanocrystal (for example, 1 nm or more and 30 nm or less) is performed on an nc-OS film, an electron beam diffraction pattern in which a plurality of spots are observed within a ring-shaped region centered on a direct spot may be obtained.

[0466] [a-like OS] The a-like OS is an oxide semiconductor having a structure between the nc-OS and the amorphous oxide semiconductor. The a-like OS has a loose or low-density region. That is, the a-like OS has lower crystallinity compared to the nc-OS and the CAAC-OS. Also, the a-like OS has a higher hydrogen concentration in the film compared to the nc-OS and the CAAC-OS.

[0467] [[Constitution of Oxide Semiconductor]] Next, the details of the above-described CAC-OS will be described. Note that the CAC-OS relates to the material constitution.

[0468] [CAC-OS] The CAC-OS is, for example, a configuration of a material in which the elements constituting the metal oxide are unevenly distributed in a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or in the vicinity thereof. Hereinafter, in the metal oxide, one or more metal elements are unevenly distributed, and the region having the metal element is in a state of being mixed in a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or in the vicinity thereof, which is also referred to as a mosaic state or a patch state.

[0469] Furthermore, the CAC-OS is a configuration in which the material is separated into a first region and a second region to form a mosaic state, and the first region is distributed in the film (hereinafter, also referred to as a cloud state). That is, the CAC-OS is a composite metal oxide having a configuration in which the first region and the second region are mixed.

[0470] Here, the atomic ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in the In-Ga-Zn oxide are represented as [In], [Ga], and [Zn], respectively. For example, in the CAC-OS in the In-Ga-Zn oxide, the first region is a region where [In] is larger than [In] in the composition of the CAC-OS film. Also, the second region is a region where [Ga] is larger than [Ga] in the composition of the CAC-OS film. Alternatively, for example, the first region is a region where [In] is larger than [In] in the second region and [Ga] is smaller than [Ga] in the second region. Also, the second region is a region where [Ga] is larger than [Ga] in the first region and [In] is smaller than [In] in the first region.

[0471] Specifically, the first region is a region mainly composed of indium oxide, indium zinc oxide, etc., and the second region is a region mainly composed of gallium oxide, gallium zinc oxide, etc. In other words, the first region can be rephrased as a region mainly composed of In, and the second region can be rephrased as a region mainly composed of Ga.

[0472] In addition, there are cases where a clear boundary between the first region and the second region cannot be observed.

[0473] In addition, the CAC-OS in In-Ga-Zn oxide refers to a structure in which some regions mainly composed of Ga and some regions mainly composed of In are arranged randomly in a mosaic pattern in a material structure containing In, Ga, Zn, and O. Therefore, it is presumed that the CAC-OS has a structure in which metal elements are distributed non-uniformly.

[0474] CAC-OS can be formed by sputtering, for example, under the condition of not heating the substrate. Also, when forming CAC-OS by sputtering, any one or more selected from inert gases (typically argon), oxygen gas, and nitrogen gas can be used as the film-forming gas. Further, the lower the flow rate ratio of oxygen gas to the total flow rate of the film-forming gas during film formation, the more preferable. For example, it is preferable that the flow rate ratio of oxygen gas to the total flow rate of the film-forming gas during film formation is 0% or more and less than 30%, preferably 0% or more and 10% or less.

[0475] Also, for example, in CAC-OS in In-Ga-Zn oxide, it can be confirmed by EDX mapping obtained using energy dispersive X-ray spectroscopy (EDX) that the region mainly composed of In (the first region) and the region mainly composed of Ga (the second region) are unevenly distributed and have a mixed structure.

[0476] Here, the first region is a region with higher conductivity compared to the second region. That is, the conductivity as a metal oxide is exhibited by the flow of carriers in the first region. Therefore, when the first region is distributed in a cloud-like manner in the metal oxide, a high field-effect mobility (μ) can be realized.

[0477] On the other hand, the second region is a region with higher insulation compared to the first region. That is, by distributing the second region in the metal oxide, the leakage current can be suppressed.

[0478] Therefore, when using CAC-OS in a transistor, the conductivity caused by the first region and the insulating property caused by the second region act complementarily, enabling the function of switching (turning on / off) to be imparted to the CAC-OS. That is, CAC-OS has a conductive function in part of the material and an insulating function in part of the material, and has a semiconductor function as a whole. By separating the conductive function and the insulating function, both functions can be maximally enhanced. Thus, by using CAC-OS in a transistor, a high on-current (I on )、high field-effect mobility (μ), and good switching operation can be realized.

[0479] In addition, a transistor using CAC-OS has high reliability. Therefore, CAC-OS is optimal for various semiconductor devices including display devices.

[0480] Oxide semiconductors have various structures and each has different characteristics. The oxide semiconductor according to one aspect of the present invention may have two or more of amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, CAC-OS, nc-OS, and CAAC-OS.

[0481] <Transistor having an oxide semiconductor> Subsequently, the case of using the above oxide semiconductor in a transistor will be described.

[0482] By using the above oxide semiconductor in a transistor, a transistor with high field-effect mobility can be realized. Also, a highly reliable transistor can be realized.

[0483] For a transistor, it is preferable to use an oxide semiconductor with a low carrier concentration. For example, the carrier concentration of the oxide semiconductor is 1×10 17 cm -3 or less, preferably 1×10 15 cm -3 or less, more preferably 1×10 13 cm -3Hereinafter, more preferably 1×10 11 cm -3 or less, and even more preferably 1×10 10 cm -3 or less, and 1×10 -9 cm -3 or more. When reducing the carrier concentration of the oxide semiconductor film, the impurity concentration in the oxide semiconductor film may be reduced and the density of defect levels may be reduced. In this specification and the like, a low impurity concentration and a low density of defect levels are referred to as high-purity intrinsic or substantially high-purity intrinsic. In some cases, an oxide semiconductor with a low carrier concentration may be referred to as a high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor.

[0484] In addition, since an oxide semiconductor film that is high-purity intrinsic or substantially high-purity intrinsic has a low density of defect levels, the density of trap levels may also be low.

[0485] In addition, the charge trapped in the trap levels of the oxide semiconductor may take a long time to disappear and may behave like a fixed charge. Therefore, a transistor in which a channel formation region is formed in an oxide semiconductor with a high trap level density may have unstable electrical characteristics.

[0486] Therefore, in order to stabilize the electrical characteristics of the transistor, it is effective to reduce the impurity concentration in the oxide semiconductor. In addition, in order to reduce the impurity concentration in the oxide semiconductor, it is preferable to also reduce the impurity concentration in the adjacent film. Examples of impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, silicon, and the like.

[0487] <Impurity> Here, the effects of various impurities in the oxide semiconductor will be described.

[0488] In an oxide semiconductor, when silicon, carbon, or the like, which is one of the Group 14 elements, is included, defect levels are formed in the oxide semiconductor. Therefore, the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon near the interface with the oxide semiconductor (the concentration obtained by secondary ion mass spectrometry (SIMS)) are set to 2×10 18 atoms / cm 3 or less, preferably 2×10 17 atoms / cm 3 or less.

[0489] In addition, when an alkali metal or an alkaline earth metal is included in the oxide semiconductor, defect levels may be formed and carriers may be generated. Therefore, a transistor using an oxide semiconductor containing an alkali metal or an alkaline earth metal tends to have normally-on characteristics. For this reason, the concentration of the alkali metal or alkaline earth metal in the oxide semiconductor obtained by SIMS is set to 1×10 18 atoms / cm 3 or less, preferably 2×10 16 atoms / cm 3 or less.

[0490] In addition, in an oxide semiconductor, when nitrogen is included, electrons as carriers are generated, the carrier concentration increases, and it tends to be n-type. As a result, a transistor using an oxide semiconductor containing nitrogen as a semiconductor tends to have normally-on characteristics. Or, when nitrogen is included in the oxide semiconductor, trap levels may be formed. As a result, the electrical characteristics of the transistor may become unstable. For this reason, the nitrogen concentration in the oxide semiconductor obtained by SIMS is set to less than 5×10 19 atoms / cm 3 , preferably less than 5×10 18 atoms / cm 3 , more preferably 1×10 18 atoms / cm 3 , still more preferably 5×10 17 atoms / cm 3 or less.

[0491] In addition, since hydrogen contained in the oxide semiconductor reacts with oxygen bonded to metal atoms to form water, oxygen vacancies may be formed. When hydrogen enters these oxygen vacancies, electrons, which are carriers, may be generated. Also, a part of the hydrogen may bond with oxygen bonded to metal atoms to generate electrons, which are carriers. Therefore, a transistor using an oxide semiconductor containing hydrogen tends to have normally-on characteristics. For this reason, it is preferable that hydrogen in the oxide semiconductor is reduced as much as possible. Specifically, in the oxide semiconductor, the hydrogen concentration obtained by SIMS is less than 1×10 20 atoms / cm 3 less than, preferably less than 1×10 19 atoms / cm 3 less than, more preferably less than 5×10 18 atoms / cm 3 less than, even more preferably less than 1×10 18 atoms / cm 3 less than.

[0492] By using an oxide semiconductor with sufficiently reduced impurities in the channel formation region of a transistor, stable electrical characteristics can be imparted.

[0493] This embodiment can be implemented in appropriate combination with at least a part of other embodiments described in this specification.

[0494] (Embodiment 4) In this embodiment, an electronic device according to an aspect of the present invention will be described with reference to FIGS. 25 to 27.

[0495] An electronic device according to an aspect of the present invention can perform imaging at a display unit, detect touch operations, etc. Thereby, the functionality, convenience, etc. of the electronic device can be enhanced.

[0496] Examples of the electronic device according to one aspect of the present invention include, for example, electronic devices having a relatively large screen such as a television device, a desktop or laptop personal computer, a monitor for a computer, a digital signage, a large game machine such as a pachinko machine, and in addition, a digital camera, a digital video camera, a digital photo frame, a mobile phone, a portable game machine, a portable information terminal, an audio playback device, and the like.

[0497] The electronic device according to one aspect of the present invention may have a sensor (including a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays).

[0498] The electronic device according to one aspect of the present invention can have various functions. For example, it can have a function of displaying various information (such as still images, moving images, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date or time, etc., a function of executing various software (programs), a wireless communication function, a function of reading programs or data recorded on a recording medium, and the like.

[0499] The electronic device 6500 shown in FIG. 25A is a portable information terminal that can be used as a smartphone.

[0500] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The display unit 6502 has a touch panel function.

[0501] The display device shown in Embodiment 2 can be applied to the display unit 6502.

[0502] FIG. 25B is a schematic cross-sectional view including an end portion on the microphone 6506 side of the housing 6501.

[0503] A protective member 6510 having translucency is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0504] The display panel 6511, the optical member 6512, and the touch sensor panel 6513 are fixed to the protective member 6510 by an adhesive layer (not shown).

[0505] In a region outside the display unit 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded-back portion. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on the printed circuit board 6517.

[0506] The flexible display according to one aspect of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. Further, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted while suppressing the thickness of the electronic device. Further, by folding back a part of the display panel 6511 and arranging the connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow bezel can be realized.

[0507] By using the display device shown in the second embodiment for the display panel 6511, imaging can be performed by the display unit 6502. For example, a fingerprint can be imaged by the display panel 6511 to perform fingerprint authentication.

[0508] Since the display unit 6502 further includes a touch sensor panel 6513, a touch panel function can be imparted to the display unit 6502. As the touch sensor panel 6513, various methods such as a capacitance method, a resistive film method, a surface acoustic wave method, an infrared method, an optical method, and a pressure-sensitive method can be used. Alternatively, the display panel 6511 may function as a touch sensor, and in that case, the touch sensor panel 6513 may not be provided.

[0509] FIG. 26A shows an example of a television apparatus. In the television apparatus 7100, a display unit 7000 is incorporated in a housing 7101. Here, a configuration in which the housing 7101 is supported by a stand 7103 is shown.

[0510] The display device shown in Embodiment 2 can be applied to the display unit 7000.

[0511] The operation of the television apparatus 7100 shown in FIG. 26A can be performed by an operation switch provided in the housing 7101, a separate remote control operation unit 7111, or the like. Alternatively, the display unit 7000 may be provided with a touch sensor, and the television apparatus 7100 may be operated by touching the display unit 7000 with a finger or the like. The remote control operation unit 7111 may have a display unit that displays information output from the remote control operation unit 7111. Channel and volume operations can be performed by operation keys or a touch panel provided in the remote control operation unit 7111, and the video displayed on the display unit 7000 can be operated.

[0512] Note that the television apparatus 7100 has a configuration including a receiver and a modem. The receiver can receive general television broadcasts. Also, by connecting to a wired or wireless communication network via the modem, one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers) information communication can be performed.

[0513] FIG. 26B shows an example of a notebook personal computer. The notebook personal computer 7200 has a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like. A display unit 7000 is incorporated in the housing 7211.

[0514] The display device shown in Embodiment 2 can be applied to the display unit 7000.

[0515] FIG. 26C and FIG. 26D show an example of digital signage.

[0516] The digital signage 7300 shown in FIG. 26C includes a housing 7301, a display unit 7000, a speaker 7303, etc. Furthermore, it can have an LED lamp, operation keys (including a power switch or an operation switch), connection terminals, various sensors, a microphone, etc.

[0517] FIG. 26D shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0518] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more likely it is to catch people's eyes, for example, the advertising effect can be enhanced.

[0519] By applying a touch panel to the display unit 7000, not only can images or videos be displayed on the display unit 7000, but also users can operate it intuitively, which is preferable. Also, when used for applications such as providing route information or traffic information, the usability can be enhanced by intuitive operation.

[0520] Also, as shown in FIG. 26C and FIG. 26D, the digital signage 7300 or the digital signage 7400 is preferably capable of wireless communication and cooperation with an information terminal 7311 or an information terminal 7411 such as a smartphone held by a user. For example, the information of the advertisement displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. Also, by operating the information terminal 7311 or the information terminal 7411, the display on the display unit 7000 can be switched.

[0521] In FIG. 26C and FIG. 26D, the display device shown in Embodiment 2 can be applied to the display unit of the information terminal 7311 or the information terminal 7411.

[0522] Also, a game can be executed on the digital signage 7300 or the digital signage 7400, using the screen of the information terminal device 7311 or the information terminal device 7411 as an operation means (controller). As a result, an unspecified number of users can participate in and enjoy the game simultaneously.

[0523] The electronic device shown in FIGS. 27A to 27F includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), connection terminals 9006, a sensor 9007 (including a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays), a microphone 9008, and the like.

[0524] The electronic device shown in FIGS. 27A to 27F has various functions. For example, it can have a function of displaying various information (such as still images, moving images, text images, etc.) on the display unit, a touch panel function, a function of displaying a calendar, date, or time, a function of controlling processing by various software (programs), a wireless communication function, a function of reading and processing programs or data recorded on a recording medium, and the like. Note that the functions of the electronic device are not limited to these, and it can have various functions. The electronic device may have a plurality of display units. Also, the electronic device may be provided with a camera or the like and have a function of shooting still images or moving images and storing them in a recording medium (external or built into the camera), a function of displaying the captured images on the display unit, and the like.

[0525] Details of the electronic device shown in FIGS. 27A to 27F will be described below.

[0526] FIG. 27A is a perspective view showing a portable information terminal 9101. The portable information terminal 9101 can be used, for example, as a smartphone. Note that the portable information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, etc. Further, the portable information terminal 9101 can display character or image information, etc. on a plurality of its surfaces. FIG. 27A shows an example in which three icons 9050 are displayed. Also, information 9051 indicated by a dashed rectangle can be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming calls such as e-mails, SNS, and phone calls, titles such as e-mails or SNS, sender names, dates and times, battery remaining amounts, antenna reception strengths, etc. Alternatively, icons 9050, etc. may be displayed at the position where the information 9051 is displayed.

[0527] FIG. 27B is a perspective view showing a portable information terminal 9102. The portable information terminal 9102 has a function of displaying information on three or more surfaces of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are respectively displayed on different surfaces. For example, the user can also confirm the information 9053 displayed at a position where it can be observed from above the portable information terminal 9102 in a state where the portable information terminal 9102 is stored in the breast pocket of a jacket. The user can check the display without taking the portable information terminal 9102 out of the pocket and can, for example, determine whether to answer a call.

[0528] FIG. 27C is a perspective view showing a wristwatch-type portable information terminal 9200. The portable information terminal 9200 can be used, for example, as a smartwatch. Also, the display surface of the display unit 9001 is provided to be curved, and display can be performed along the curved display surface. Further, the portable information terminal 9200 can also make a hands-free call by communicating with, for example, a wirelessly communicable headset. Also, the portable information terminal 9200 can perform data transmission and charging mutually with other information terminals by the connection terminal 9006. Note that the charging operation may be performed by wireless power supply.

[0529] Figs. 27D to 27F are perspective views showing the foldable portable information terminal 9201. Further, Fig. 27D shows the state where the portable information terminal 9201 is unfolded, Fig. 27F shows the folded state, and Fig. 27E is a perspective view of the state in the middle of changing from one of Fig. 27D and Fig. 27F to the other. The portable information terminal 9201 is excellent in portability in the folded state and excellent in the listability of display due to a seamless wide display area in the unfolded state. The display unit 9001 included in the portable information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the display unit 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0530] This embodiment can be implemented in appropriate combination with at least a part of other embodiments described in this specification.

Description of Reference Numerals

[0531] GL, SLR, SLB, SLG, SE, RS, TX: Wiring, ELR, ELB, ELG: Light-emitting element, PD, PDG, PDR: Light-receiving element, MER: Light-receiving and light-emitting element, AL, CL, REN, VCP, VPI, VRS: Wiring, M1 to M3: Transistor, M10 to M14: Transistor, C1, C2: Capacitor, ADC: Conversion circuit, DAC: Conversion circuit, AMP: Amplification circuit, HLD: Holding circuit, PA: Amplification circuit, SR, SB, SG: Video signal, SOUT: Output signal, 10, 10A, 10B, 10C: Display device, 11: Display unit, 12, 13, 14: Circuit unit, 20, 21R, 21B, 21G: Pixel, 22, 22R, 22B, 22G: Light-receiving pixel, 30, 30R, 30B, 30G: Pixel, 31R: Circuit, 32: Circuit, 41, 42, 43: Circuit unit

Claims

[Claim 1] A first pixel, a second pixel, and a first wiring, The first pixel has a light emitting element, the second pixel has a light receiving element; The first pixel is provided with image data from the first wiring, The second pixel outputs light reception data to the first wiring.

Images