Method for controlling substrate processing apparatus

Abstract

To provide a method for controlling a substrate processing apparatus that performs additional film formation after a process recipe is aborted.SOLUTION: A control method for a substrate processing apparatus that performs a film formation process on a substrate according to a process recipe includes a step in which when an abort occurs in the middle of the process recipe, an additional film formation recipe is created in accordance with a timing at which the abort has occurred, and a step in which additional film formation is performed on the substrate according to the additional film formation recipe.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present disclosure relates to a control method for a substrate processing apparatus.

Background Art

[0002] Patent Document 1 discloses a substrate processing method including a stop step of stopping a substrate processing step when an abnormality occurs in a substrate processing apparatus from the start of a pretreatment step to before the start of the substrate processing step, and a restart step of performing, in the order of the pretreatment step and the substrate processing step after the abnormality is resolved, when the abnormality is resolved. Further, Patent Document 2 discloses a substrate processing apparatus that performs substrate processing in accordance with a recipe.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] In one aspect, the present disclosure provides a control method for a substrate processing apparatus that performs additional film formation after aborting a process recipe.

Means for Solving the Problems

[0005] In order to solve the above problems, according to one aspect, there is provided a control method for a substrate processing apparatus that performs a film formation process on a substrate in accordance with a process recipe, the method including: creating an additional film formation recipe according to the timing at which an abort occurs when the abort occurs during the process recipe; and performing an additional film formation on the substrate in accordance with the additional film formation recipe.

Effects of the Invention

[0006] According to one aspect, a control method of a substrate processing apparatus that performs additional film formation after aborting a process recipe can be provided.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Embodiments for Carrying Out the Invention

[0008] Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. In each drawing, the same reference numerals are assigned to the same components, and redundant descriptions may be omitted.

[0009] [Substrate Processing System] First, an example of the configuration of the substrate processing system 1 according to the present embodiment will be described with reference to FIG. 1. FIG. 1 is a schematic diagram showing an example of the configuration of the substrate processing system 1.

[0010] The substrate processing system 1 includes a substrate processing apparatus 2 and an optimization apparatus 3.

[0011] The substrate processing apparatus 2 is an apparatus for performing a desired process (e.g., film formation process, etc.) on a substrate. In the following description, the case where the substrate processing apparatus 2 is a film formation apparatus for performing a desired film formation process on a substrate will be described as an example. The substrate processing apparatus 2 may be, for example, a film formation apparatus that supplies a processing gas into a processing chamber that houses a substrate support unit for supporting a substrate, and performs a desired film formation process on the substrate. Specifically, the substrate processing apparatus 2 may be a CVD (Chemical Vapor Deposition) apparatus or an ALD (Atomic Layer Deposition) apparatus. Further, the substrate processing apparatus 2 may be, for example, a film formation apparatus that generates plasma of a processing gas in the processing chamber and performs a desired film formation process on the substrate. Specifically, the substrate processing apparatus 2 may be a PE-CVD (Plasma-Enhanced Chemical Vapor Deposition) apparatus or a PE-ALD (Plasma-Enhanced Atomic Layer Deposition). Also, the substrate processing apparatus 2 may be, for example, a film formation apparatus that sputters a target provided in the processing chamber and performs a desired film formation process on the substrate. Specifically, the substrate processing apparatus 2 may be a PVD (Physical Vapor Deposition) apparatus. Note that the film formation method of the substrate processing apparatus 2 is not limited to these.

[0012] The substrate processing apparatus 2 includes a control device 20. The control device 20 is, for example, a computer and includes a CPU (Central Processing Unit), a RAM (Random Access Memory), a ROM (Read Only Memory), an auxiliary storage device, and the like. The CPU operates based on a program stored in the ROM or the auxiliary storage device and controls the operation of the substrate processing apparatus 2.

[0013] The optimization device 3 is, for example, a computer, and includes a CPU (Central Processing Unit), a RAM (Random Access Memory), a ROM (Read Only Memory), an auxiliary storage device, etc. The CPU operates based on a program stored in the ROM or the auxiliary storage device, and creates recipes (process recipe 32a, additional film deposition recipe 32b) for the substrate processing device 2.

[0014] The optimization device 3 is connected to the control device 20 of the substrate processing device 2 by communication means 4 such as wired or wireless. For example, the optimization device 3 transmits recipes (process recipe 32a, additional film deposition recipe 32b) to the control device 20 of the substrate processing device 2 via the communication means 4. The control device 20 of the substrate processing device 2 controls the operation of the substrate processing device 2 based on the recipes, thereby performing desired processing on the substrate.

[0015] The control device 20 of the substrate processing device 2 includes a control unit 21, an abort determination unit 22, an input unit 23, and an output unit 24.

[0016] The control unit 21 controls the substrate processing device 2 in accordance with the recipes (process recipe 32a, additional film deposition recipe 32b). Thereby, a desired film is formed on the substrate.

[0017] The abort determination unit 22 determines whether an abort has occurred during the execution of the recipe in the substrate processing device 2 that is controlled in accordance with the recipe.

[0018] The input unit 23 is configured such that an operator can input operations. The input unit 23 may be, for example, an input device operable by the operator.

[0019] The output unit 24 outputs various information, etc. The output unit 24 may be, for example, a display device that visually displays various information, etc.

[0020] The optimization device 3 includes an additional film deposition recipe creation unit 31 and a storage unit 32.

[0021] The additional film formation recipe creation unit 31 creates an additional film formation recipe 32b. Note that the creation of the additional film formation recipe 32b will be described later.

[0022] The storage unit 32 stores a process recipe 32a for performing substrate processing. The storage unit 32 also stores the additional film formation recipe 32b created by the additional film formation recipe creation unit 31. The storage unit 32 also stores the log of the substrate processing apparatus 2 output from the control device 20 via the communication means 4.

[0023] Next, an example of the operation of the optimization device 3 will be described. In the process recipe 32a, conditions necessary for substrate processing (for example, control values such as temperature, gas flow rate, pressure, time, etc.) are set in advance. The control unit 21 controls the substrate processing apparatus 2 in accordance with the process recipe 32a. Thereby, a desired film is formed on the substrate.

[0024] By the way, when the substrate processing apparatus 2 performs a film formation process on a substrate, the process recipe may be interrupted (aborted) for various reasons (for example, sensor value abnormality, timeout, etc.). A substrate on which the abort process of the process recipe is executed after the start of the film formation process is determined to be a substrate in an unclear state as to whether the film formation process is completed (hereinafter, also referred to as a gray state). A substrate determined to be in the gray state cannot be sent to the next process of the film formation process.

[0025] Here, for a substrate determined to be in the gray state, the surface state of the substrate is measured, and a determination is made as to whether to discard the substrate or perform a recovery process. Further, for a substrate determined to perform the recovery process, a determination is made as to whether to etch the substrate surface and start the film formation process from the beginning or to perform an additional film formation process on the substrate, and the determined process is performed on the substrate.

[0026] In addition, when it is determined that an additional film formation process is to be performed on the substrate, it is required to create an additional film formation recipe according to the timing at which the abort process occurred. Note that creating the additional film formation recipe does not simply involve adjusting only the film formation time or executing the remaining process recipe after the abort occurs. For example, in order to reproduce the temperature before the abort and then execute the remaining process recipe after the abort, it is necessary to consider changing the flowing gas (for example, changing from a film formation gas to an inert gas (N2 gas), etc.). In particular, in a process recipe in which film formation is performed while lowering or raising the temperature, such considerations are necessary. Therefore, creating the additional film formation recipe is difficult for anyone other than an experienced engineer.

[0027] Next, a control method for the substrate processing apparatus 2 according to the present embodiment will be described with reference to FIG. 2.

[0028] In step S101, the process recipe 32a is executed. Here, the process recipe 32a is transmitted from the optimization device 3 to the control device 20 and stored in the ROM or auxiliary storage device of the control device 20. The control unit 21 controls the substrate processing apparatus 2 in accordance with the process recipe 32a stored in the ROM or auxiliary storage device of the control device 20.

[0029] In step S102, it is determined whether an abort has occurred. Here, the abort determination unit 22 determines whether an abort has occurred in the substrate processing apparatus 2. If no abort has occurred (S102·NO), the processing of the control device 20 returns to step S101, and the control of the substrate processing apparatus 2 in accordance with the process recipe 32a continues. Note that when the process recipe 32a ends without an abort occurring and a desired film is formed on the substrate, the processing of the control device 20 shown in FIG. 2 ends.

[0030] If an abort has occurred (S102·YES), the processing of the control device 20 proceeds to step S103. Note that when an abort occurs, a warning display or the like may be displayed on the output unit 24.

[0031] In step S103, it is determined whether additional film deposition on the substrate is possible. Here, the operator checks the state of the substrate surface (for example, the state of particles adhering to the substrate surface, etc.). Also, the operator checks for any abnormalities in the substrate processing apparatus 2 and any abnormalities in the substrate. Then, the operator inputs to the control device 20 via the input unit 23 whether additional film deposition on the substrate is possible, and it is transmitted from the control device 20 to the optimization device 3 via the communication means 4. The optimization device 3 determines whether additional film deposition on the substrate is possible based on the input result of the operator. If it is determined that additional film deposition is not possible (S103·NO), the processing of the optimization device 3 ends. That is, this substrate is discarded.

[0032] If it is determined that additional film deposition is possible (S103·YES), the processing of the optimization device 3 proceeds to step S104.

[0033] In step S104, it is determined whether the timing at which an abort occurred was during the execution of the film deposition step. The optimization device 3 determines whether the timing at which an abort occurred was during the execution of the film deposition step based on the log of the substrate processing apparatus 2 stored in the storage unit 32. Here, the process recipe 32a includes a film deposition step of forming a desired film on the substrate, a pre - treatment step performed before the film deposition step, and a post - treatment step performed after the film deposition step. If the timing at which an abort occurred was not during the execution of the film deposition step (S104·NO), the processing of the optimization device 3 returns to step S101. Here, if an abort occurred in the pre - treatment step before the execution of the film deposition step, the process recipe 32a is executed again (S101). In addition, if an abort occurred in the post - treatment step after the execution of the film deposition step, the processing of the optimization device 3 shown in FIG. 2 ends.

[0034] If the timing at which an abort occurred was during the execution of the film deposition step (S104·YES), the processing of the optimization device 3 proceeds to step S105.

[0035] In step S105, it is determined whether or not to perform additional film deposition on the substrate. Here, the operator inputs to the control device 20 via the input unit 23 whether or not to perform additional film deposition, and it is transmitted from the control device 20 to the optimization device 3 via the communication means 4. The optimization device 3 determines whether or not to perform additional film deposition on the substrate based on the input result of the operator. If it is determined not to perform additional film deposition (S105·NO), the process of the optimization device 3 ends. That is, this substrate is discarded.

[0036] If it is determined to perform additional film deposition (S105·YES), the process of the optimization device 3 proceeds to step S106.

[0037] In step S106, it is determined whether or not the substrate exists in the substrate processing apparatus 2. The optimization device 3 determines whether or not the substrate exists in the substrate processing apparatus 2 based on the state information of the substrate transfer device (not shown). If the substrate exists in the substrate processing apparatus 2 (S106·YES), the process of the optimization device 3 proceeds to step S108. If the substrate does not exist in the substrate processing apparatus 2 (S106·NO), the process of the optimization device 3 proceeds to step S107.

[0038] In step S107, the optimization device 3 controls the substrate transfer device (not shown) to transfer the substrate into the substrate processing apparatus 2. Then, the process of the optimization device 3 proceeds to step S108.

[0039] In step S108, an additional film deposition recipe 32b is created. Here, the additional film deposition recipe creation unit 31 automatically creates the additional film deposition recipe 32b according to the timing at which an abort occurred, and stores it in the storage unit 32.

[0040] The additional film formation recipe creation unit 31 first determines how far the film formation step had progressed at the time of abortion according to the timing at which the abortion occurred. Specifically, the additional film formation recipe creation unit 31 determines how far the film formation step of the process recipe 32a had progressed at the time of abortion by using at least any one of the log of the substrate processing apparatus 2 stored in the storage unit 32, the measurement results of various measuring instruments (real sensors) in the substrate processing apparatus 2, the measurement results of virtual metrology (virtual sensors) in the substrate processing apparatus 2, the measurement data of the substrate surface (for example, the measurement data of the substrate surface in step S103), and the like. Note that the log of the substrate processing apparatus 2 stored in the storage unit 32 includes the timing of abortion, temperature, process gas flow rate, progress of the film formation step, time when the step was executed, and the like. The measurement data detected by the real sensors in the substrate processing apparatus 2 includes film thickness information, pressure, temperature, and the like. The measurement data detected by the virtual sensors in the substrate processing apparatus 2 includes virtual film thickness, virtual temperature, and the like. The measurement data of the substrate surface includes film thickness information, surface roughness, number of particles on the substrate surface, and the like.

[0041] Then, the additional film formation recipe creation unit 31 automatically creates an additional film formation recipe 32b based on the determination result of how far the film formation step had progressed at the time of abortion, and stores it in the storage unit 32.

[0042] In step S109, the additional film formation recipe 32b is executed. Here, the additional film formation recipe 32b is transmitted from the optimization device 3 to the control device 20 and stored in the ROM or auxiliary storage device of the control device 20. The control unit 21 controls the substrate processing apparatus 2 in accordance with the additional film formation recipe 32b stored in the ROM or auxiliary storage device of the control device 20.

[0043] In step S110, the additional film formation recipe 32b is deleted. Here, the control device 20 deletes the additional film formation recipe 32b stored in the ROM or auxiliary storage device. Also, the optimization device 3 deletes the additional film formation recipe 32b from the storage unit 32.

[0044] As described above, according to the control method of the substrate processing apparatus 2 according to the present embodiment, when the operator gives an instruction (S105·YES), an additional film formation recipe 32b can be automatically created (step S108) and the additional film formation recipe 32b can be executed (step S109).

[0045] Thereby, the film can be complemented by performing additional film formation on the portion that could not be formed due to abortion, and a desired film can be formed on the substrate. Therefore, the number of substrates to be discarded can be reduced. In addition, the environmental load caused by the discarded substrates can be reduced.

[0046] In addition, since the optimization device 3 automatically creates the additional film formation recipe 32b, additional film formation can be performed on the substrate even without an experienced engineer. In addition, the risk of human setting errors (for example, setting of gas type, setting of time, etc.) during the creation of the additional film formation recipe 32b can be reduced. In addition, by creating and executing the additional film formation recipe 32b with a single instruction from the operator, the burden on the operator can be reduced.

[0047] Note that the substrate processing system 1 may include a plurality of substrate processing apparatuses 2 and one optimization device 3. Further, the substrate processing apparatus 2 (first substrate processing apparatus) in which abortion has occurred and the substrate processing apparatus 2 (second substrate processing apparatus) that performs additional film formation may be different apparatuses. In this case, the position (conveyance destination) of the gray-scale substrate discharged from the substrate processing apparatus 2 in which abortion has occurred can be tracked via the ID of the FOUP (Front Opening Unified Pod) that houses the substrate. The gray-scale substrate is conveyed to another substrate processing apparatus 2 that performs additional film formation (see step S107).

[0048] Further, the optimization device 3 creates an additional film deposition recipe 32b based on the log or the like of the substrate processing device 2 (first substrate processing device) in which an abort has occurred (see step S108). Then, the optimization device 3 transmits the additional film deposition recipe 32b to the control device 20 of another substrate processing device 2 (second substrate processing device) that performs additional film deposition via the communication means 4. Then, the control device 20 of the other substrate processing device 2 (second substrate processing device) controls the other substrate processing device 2 in accordance with the additional film deposition recipe 32b for performing additional film deposition (see step S109). Then, the additional film deposition recipe 32b stored in the ROM or the auxiliary storage device of the control device 20 of the other substrate processing device 2 (second substrate processing device) is deleted. Also, the additional film deposition recipe 32b is deleted from the storage unit 32 of the optimization device 3. Thereby, even for different devices, additional film deposition can be performed on a gray-scale substrate using the additional film deposition recipe 32b.

[0049] Also, although the optimization device 3 has been described as being provided separately from the control device 20 of the substrate processing device 2, the present invention is not limited to this configuration. The additional film deposition recipe creation unit 31 and the storage unit 32 may be provided in the control device 20 of the substrate processing device 2. The substrate processing system 1 includes a plurality of substrate processing devices 2, and the control device 20 of each substrate processing device 2 is connected to the control device 20 of another substrate processing device 2 by the communication means 4.

[0050] In this configuration, the control device 20 of the substrate processing device 2 (first substrate processing device) in which an abort has occurred may create the additional film deposition recipe 32b, and transmit the additional film deposition recipe 32b from the control device 20 of the substrate processing device 2 (first substrate processing device) in which an abort has occurred to the control device 20 of another substrate processing device 2 (second substrate processing device) that performs additional film deposition. Then, the control device 20 of the other substrate processing device 2 (second substrate processing device) controls the other substrate processing device 2 in accordance with the additional film deposition recipe 32b for performing additional film deposition (see step S109). The additional film deposition recipe 32b stored in the ROM or the auxiliary storage device of the control device 20 of the other substrate processing device 2 (second substrate processing device) is deleted. Thereby, even for different devices, additional film deposition can be performed on a gray-scale substrate using the additional film deposition recipe 32b.

[0051] Alternatively, logs or the like may be transmitted from the control device 20 of the substrate processing apparatus 2 (first substrate processing apparatus) in which an abort has occurred to the control device 20 of another substrate processing apparatus 2 (second substrate processing apparatus) that performs additional film formation, and the control device 20 of the other substrate processing apparatus 2 (second substrate processing apparatus) may create an additional film formation recipe 32b. Then, the control device 20 of the other substrate processing apparatus 2 (second substrate processing apparatus) controls the other substrate processing apparatus 2 in accordance with the additional film formation recipe 32b for performing additional film formation (see step S109). The additional film formation recipe 32b stored in the ROM or auxiliary storage device of the control device 20 of the other substrate processing apparatus 2 (second substrate processing apparatus) is deleted. Thereby, even with different devices, additional film formation can be performed on a gray-scale substrate using the additional film formation recipe 32b.

[0052] Further, the optimization device 3 may be configured to be able to select whether to eject (carry out) or not eject (not carry out) a gray-scale substrate from the substrate processing apparatus 2 when an abort occurs (S102·YES). By leaving the gray-scale substrate in the substrate processing apparatus 2 in a vacuum atmosphere, it is possible to prevent the substrate from being exposed to the atmospheric atmosphere and the surface state of the substrate from changing (for example, natural oxidation, adsorption of moisture, etc.).

[0053] Also, the additional film formation recipe 32b is preferably automatically deleted (step S110). Thereby, it is possible to prevent unnecessary recipes from remaining in the storage unit 32, and for example, prevent selection mistakes by the operator when selecting the process recipe 32a to be executed in step S101 before the execution of step S101.

[0054] Note that the configurations and the like described in the above embodiments are not limited to the configurations shown here, such as combinations with other elements. Regarding these points, it is possible to make changes without departing from the spirit of the present invention, and it can be appropriately determined according to the application form.

Explanation of Reference Numerals

[0055] 1 Substrate processing system 2 Substrate processing apparatus 3 Optimization apparatus 4 Communication means 20 Control apparatus 21 Control unit 22 Abort determination unit 23 Input unit 24 Output unit 31 Additional film deposition recipe creation unit 32 Storage unit 32a Process recipe 32b Additional film deposition recipe

Claims

1. A control method for a substrate processing apparatus that performs a film formation process on a substrate according to a process recipe, comprising: when an abort occurs during the process recipe, creating an additional film formation recipe according to the timing at which the abort occurred; performing an additional film formation on the substrate according to the additional film formation recipe. A control method for a substrate processing apparatus.

2. The step of creating the additional film formation recipe further includes storing the additional film formation recipe in a storage unit, and after the step of performing the additional film formation, further deleting the additional film formation recipe from the storage unit. The control method for a substrate processing apparatus according to Claim 1.

3. The step of creating the additional film formation recipe uses at least one of the log of the substrate processing apparatus, the measurement result of a real sensor in the substrate processing apparatus, the measurement result of a virtual sensor in the substrate processing apparatus, and the measurement data of the substrate surface of the substrate to determine how far the process recipe had progressed at the time of the abort; and creates the additional film formation recipe based on the determination result of how far the process recipe had progressed at the time of the abort. The control method for a substrate processing apparatus according to Claim 1.

4. further comprising a step of determining whether an instruction has been input by an operator, and when the instruction is input, executing the step of creating the additional film formation recipe and the step of performing an additional film formation on the substrate. The control method for a substrate processing apparatus according to Claim 1.

5. The substrate processing apparatus includes a first substrate processing apparatus and a second substrate processing apparatus, in the first substrate processing apparatus, when an abort occurs during the process recipe, a first control device corresponding to the first substrate processing apparatus creates an additional film formation recipe according to the timing at which the abort occurred; transferring the substrate processed by the first substrate processing apparatus to a second substrate processing apparatus; transmitting the additional film formation recipe from the first control device to a second control device corresponding to the second substrate processing apparatus; in the second substrate processing apparatus, performing an additional film formation on the substrate according to the additional film formation recipe. The control method for a substrate processing apparatus according to Claim 1.

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