Display system

Abstract

To provide a display system with high convenience, a display system in which a screen can be operated easily with a laser pointer, and a display system in which a screen can be operated by many people.SOLUTION: A display system includes a light-emitting device and a display device. The light-emitting device includes means that emits visible laser light and means that emits invisible light. The display device includes a display unit having means that displays images and means that acquires positional information of a part to be irradiated with the visible laser light, and means that receives the invisible light. The display system also has a function of executing a process on the basis of the positional information when receiving the invisible light.SELECTED DRAWING: Figure 8

Description

[Technical field]

[0001] One aspect of the present invention relates to a display system. One aspect of the present invention relates to a display device. 1. Field of the Invention One aspect of the present invention relates to an input device. 1. Field of the Invention One aspect of the present invention relates to a light emitting device.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one embodiment of the present invention is a semiconductor device, a display device, a light-emitting device, a power storage device, a storage device, and a , electronic device, lighting device, input device, input / output device, driving method thereof, or manufacturing method thereof A semiconductor device functions by utilizing the semiconductor properties. This refers to all devices that can do this. [Background technology]

[0003] In recent years, display devices have become larger. For example, large display devices are used in the following applications: Home television equipment (also called television or television receiver), digital Digital Signage, Public Inf Ormation Display) etc.

[0004] As a display device, for example, a light-emitting device having a light-emitting element has been developed. Utilizing the luminescence (electroluminescence, hereafter referred to as EL) phenomenon The light-emitting element (also referred to as EL element) used is easy to make thin and lightweight, and has high speed response to input signals. and can be driven by a low-voltage DC power supply. For example, Patent Document 1 describes a flexible light-emitting device to which an organic EL element is applied. An optical device is disclosed. [Prior art documents]

Patent Document

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] With the increase in the size of display devices, it has become possible for multiple people to view the same screen. In applications such as presentations and multi-player game applications in entertainment facilities, applications that involve operations rather than just viewing are required.

[0007] For example, in a laser pointer that is often used for presentations in meetings, etc., although the user can point to the part that attracts attention, the user cannot operate the screen . Therefore, the user who gives the explanation has to perform the operation of pointing with the laser pointer and the operation of operating the screen with a mouse or a controller, etc. at the same time, which has been an obstacle to a smooth presentation . In addition, users other than the user who gives the explanation cannot operate the screen .

[0008] One aspect of the present invention is to provide a highly convenient display system as one of the problems. Also to provide a display system that can be easily operated on the screen with a laser pointer as one of the problems . Or, to provide a display system that can be operated by multiple people on the screen as one of the problems . Or, to provide a display device and a laser pointer device (light emitting device) that can realize the above display system as one of the problems . Or, the position information of the part pointed to by the laser pointer One of the problems is to provide a display device capable of acquiring a report. Or, one of the problems is to provide a device capable of operating a screen, which replaces a conventional laser pointer. One of the problems is to provide a device capable of operating a screen, which replaces a conventional laser pointer.

[0009] Or, one aspect of the present invention is to provide a display device with suppressed manufacturing costs as one of the problems. Or, one of the problems is to provide a high-quality display device, light-emitting device, or display system. Or, one of the problems is to provide a high-quality display device, light-emitting device, or display system. Or, one of the problems is to provide a highly reliable display device, light-emitting device, or display system. Or, one of the problems is to provide a novel display device, light-emitting device, or display system. One of the problems is to provide a novel display device, light-emitting device, or display system.

[0010] Note that the description of these problems does not prevent the existence of other problems. Note that one aspect of the present invention does not necessarily have to solve all of these problems. Note that other problems can be extracted from the descriptions in the specification, drawings, claims, etc. Note that one aspect of the present invention does not necessarily have to solve all of these problems. Note that other problems can be extracted from the descriptions in the specification, drawings, claims, etc. Note that other problems can be extracted from the descriptions in the specification, drawings, claims, etc.

Means for Solving the Problems

[0011] One aspect of the present invention is a display system including a display device and a light-emitting device. The light-emitting device has means for emitting visible light and means for emitting invisible light. The display device has a display unit having means for displaying an image and means for acquiring position information of a portion irradiated with visible light, and means for receiving invisible light. One aspect of the present invention is a display system including a display device and a light-emitting device. The light-emitting device has means for emitting visible light and means for emitting invisible light. The display device has a display unit having means for displaying an image and means for acquiring position information of a portion irradiated with visible light, and means for receiving invisible light. One aspect of the present invention is a display system including a display device and a light-emitting device. The light-emitting device has means for emitting visible light and means for emitting invisible light. The display device has a display unit having means for displaying an image and means for acquiring position information of a portion irradiated with visible light, and means for receiving invisible light. One aspect of the present invention is a display system including a display device and a light-emitting device. The light-emitting device has means for emitting visible light and means for emitting invisible light. The display device has a display unit having means for displaying an image and means for acquiring position information of a portion irradiated with visible light, and means for receiving invisible light.

[0012] Another aspect of the present invention is a display system including a display device and a light-emitting device. The light-emitting device has means for emitting visible light and means for emitting invisible light. The display device has means for displaying an image and means for acquiring position information of a portion irradiated with visible light. Another aspect of the present invention is a display system including a display device and a light-emitting device. The light-emitting device has means for emitting visible light and means for emitting invisible light. The display device has means for displaying an image and means for acquiring position information of a portion irradiated with visible light. It has a display unit and means for receiving invisible light. The display system has a function of executing processing based on position information when it receives invisible light.

[0013] Another aspect of the present invention is a display system including a display device and a light emitting device. The display device has a display unit and a light receiving unit. The display unit has a plurality of display elements that emit visible light and a plurality of first light receiving elements. The plurality of display elements and the plurality of first light receiving elements are each arranged in a matrix. The light receiving unit has a second light receiving element. The light emitting device has a first input means, a second input means, a first light emitting element, a second light emitting element, and an oscillation device. The first light emitting element includes a laser light source that exhibits visible light, and its light emission state is controlled in response to an input to the first input means. The second light emitting element includes a light source that exhibits infrared light, and the oscillation device has a function of controlling the light emission state of the second light emitting element in response to an input to the second input means. The first light receiving element has a function of receiving visible light emitted by the first light emitting element and converting it into a first electrical signal. The second light receiving element has a function of receiving infrared light emitted by the second light emitting element and converting it into a second electrical signal.

[0014] Another aspect of the present invention is a display device having a display unit and a light receiving unit. The display unit has a plurality of display elements that emit visible light and a plurality of first light receiving elements that receive visible light. The plurality of display elements and the plurality of first light receiving elements are each arranged in a matrix. Also, the light receiving unit has a second light receiving element that receives infrared light.

[0015] Also, in the above, the display element has a first pixel electrode, a light emitting layer, and a common electrode. ​​​​​​​​​​​​​​is preferable. Further, the first light-receiving element preferably has a second pixel electrode, an active layer, and a common electrode. Preferably, the light-emitting layer and the active layer contain different organic compounds. Preferably, the first pixel electrode and the second pixel electrode are provided on the same plane. Preferably, the common electrode has a portion overlapping with the first pixel electrode via the light-emitting layer and a portion overlapping with the second pixel electrode via the active layer.

[0016] Further, in the above, it is preferable that the display element and the first light-receiving element have a common layer. At this time, the common layer preferably has a portion located between the first pixel electrode and the common electrode and a portion located between the second pixel electrode and the common electrode.

[0017] Another aspect of the present invention is a light-emitting device including a first input means, a second input means, a first light-emitting element, a second light-emitting element, and an oscillation device. The first light-emitting element includes a laser light source that emits visible light, and the light-emitting state is controlled in response to an input to the first input means. The second light-emitting element includes a light source that emits infrared light. The oscillation device has a function of controlling the light-emitting state of the second light-emitting element in response to an input to the second input means.

[0018] One aspect of the present invention is a display system including any one of the above display devices and the above light-emitting device. At this time, the first light-receiving element preferably has a function of receiving visible light emitted by the first light-emitting element and converting it into a first electrical signal, and the second light-receiving element preferably has a function of receiving infrared light emitted by the second light-emitting element and converting it into a second electrical signal.

Advantages of the Invention

[0019] ​​​​​​​​According to one aspect of the present invention, a highly convenient display system can be provided. Or, a display system that enables easy operation of the screen with a laser pointer can be provided. Or, a display system that enables operation of the screen by multiple people can be provided. Further, a display device and a laser pointer device (light emitting device) capable of realizing the above display system can be provided. Or, a display device capable of acquiring the position information of the portion pointed by the laser pointer can be provided. Or, a device capable of operating the screen can be provided in place of a conventional laser pointer. According to one aspect of the present invention, a display device with suppressed manufacturing cost can be provided. Or, a display device, a light emitting device, or a display system with high quality can be provided. Or, a display device, a light emitting device, or a display system with high reliability can be provided. Or, a novel display device, a light emitting device, or a display system can be provided. It should be noted that the description of these effects does not prevent the existence of other effects. It should be noted that one aspect of the present invention does not necessarily have all of these effects. It should be noted that other effects can be extracted from the descriptions in the specification, drawings, claims, etc.

Brief Description of Drawings

[0020] Figures 3A to 3C are diagrams for explaining an example of an operation method of a display system.

[0021]

[0022]

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DETAILED DESCRIPTION OF THE INVENTION

[0023] Hereinafter, embodiments will be described with reference to the drawings. However, the embodiments can be implemented in many different modes, and it will be easily understood by those skilled in the art that the form and details can be variously changed without departing from the spirit and its scope. Therefore, the present invention is not construed as being limited to the contents described in the following embodiments.

[0024] In the configuration of the invention described below, the same reference numerals are commonly used for the same parts or parts having similar functions among different drawings, and the repeated description thereof is omitted. Also, when referring to similar functions, the hatching patterns may be the same, and in some cases, they may not be particularly labeled. In addition, in each drawing described in this specification, the size of each component, the thickness of a layer, or the area may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale.

[0025] Note that the ordinal numbers such as "first" and "second" in this specification are attached to avoid confusion of components and do not numerically limit them. A transistor is a type of semiconductor device and can realize operations such as amplification of current or voltage and switching operations for controlling conduction or non - conduction. The transistors in this specification include IGFET (Insulated Gate Field Effect Transistor) and thin - film transistors (TFT: Thin Film Transistor).

[0026] Note that in the following, expressions indicating directions such as "above" and "below" are basically used in accordance with the direction of the drawing. However, for the purpose of facilitating the explanation, etc., the directions indicated by "above" or "below" in the specification may not match the drawing. As an example, when explaining the stacking order (or formation order) of a laminate, etc., in the drawing, the side surface (formed surface, support surface, adhesive surface, flat surface, etc.) on which the laminate is provided

[0027] is located above the laminate. For the sake of clarity, the thicknesses of the layers and the dimensions of the elements shown in the drawings may be exaggerated. Therefore, the drawings should not be construed as being drawn to scale.

[0028] ​​​​​​​​Even when placed, the orientation may be expressed as downward, the opposite orientation as upward, etc.

[0029] In addition, in this specification and the like, the term "film" and the term "layer" can be interchanged with each other. For example, the terms "conductive layer" and "insulating layer" may be mutually interchangeable with the terms "conductive film" and

[0030] In this specification and the like, a display panel, which is one aspect of a display device, has a function of displaying (outputting) an image or the like on a display surface. Therefore, the display panel is one aspect of an output device.

[0031] Also, in this specification and the like, a display panel module, a display module, or simply a display panel, etc. may refer to a display panel whose substrate has a connector such as an FPC (Flexible Printed Circuit) or a TCP (Tape Carrier Packa ge) attached thereto, or a substrate on which an IC is mounted by a COG (Chip On Glass) method or the like.

[0032] (Embodiment 1) In this embodiment, a display system according to one aspect of the present invention will be described.

[0033] [Overview] A display system according to one aspect of the present invention includes a display device having a display unit (also referred to as a screen) that displays an image, and a light-emitting device that emits laser light. The light-emitting device can be used as a laser pointer.

[0034] The light-emitting device is a light source (a first light-emitting element or a first light-emitting device) that emits visible laser light. ​​​The light emitting device further includes a light source (second light source) that emits invisible light. The invisible light is light that does not include visible light. Even if it contains ultraviolet light, infrared light, or electromagnetic waves (radio waves) with wavelengths longer than infrared light, It is preferable to use light having a longer wavelength than visible light as the invisible light, and in particular infrared light. It is preferable to use:

[0035] The visible laser light emitted by the light-emitting device has high directivity and a narrow irradiation range, so it is difficult to illuminate the display unit with it. By doing so, it is possible to point out a specific area of ​​the display unit. The invisible light used is light with a lower directivity than the visible laser light, that is, light with a wider irradiation range. There can be.

[0036] The visible laser light can be emitted by operating a first switch provided in the light emitting device. The invisible light can be emitted by operating a second switch of the light emitting device. In this way, the visible laser light and the invisible light can be irradiated by the same. By configuring the two switches so that they can be operated individually, the same operation as in the conventional method can be performed without operating the second switch. The first switch and the second switch can be used as a laser pointer. Examples include physical switches, touch sensors (including touchpads), and optical sensors. The sensing system is made up of various sensors such as acoustic sensors, acceleration sensors, and temperature sensors. A guiding device can also be applied.

[0037] The display unit of a display device has a plurality of pixels arranged in a matrix for displaying images. A pixel has at least one display element (also called a display device). The section includes a first light receiving element (also referred to as a first light receiving device) that receives the visible laser light and converts it into an electrical signal (also referred to as a first electrical signal), and a plurality of such first light receiving elements are arranged in a matrix. As the first light receiving element, for example, a photodiode can be used. By arranging the first light receiving elements in a matrix in the display section, the display device can obtain the position where the visible laser light is irradiated as position information.

[0038] In addition, the display device includes a light receiving section in a part different from the display section. The light receiving section includes a second light receiving element (also referred to as a second light receiving device) that receives the non-visible light and converts it into an electrical signal (also referred to as a second electrical signal).

[0039] When non-visible light is received by the light receiving section, the display device can execute various processes based on the position information of the part where the visible laser light is irradiated. For example, in addition to processes such as selection, execution, and movement of objects displayed on the screen, processes for functions such as character input and drawing can be executed. Also, according to the trajectory of the irradiation position of the visible laser light, processes for a gesture input function can be executed. The processes that the display system can execute listed here are just examples, and various processes can be executed according to the application software incorporated in the display system.

[0040] As described above, the display system according to one aspect of the present invention can also function as an input device such as a pointing device with a light emitting device having a function as a laser pointer. This eliminates the need for input devices such as a mouse and a touch pad that were conventionally required, thereby improving convenience. ​​​​​​​​​​​​​

[0041] In addition, convenience can be further improved by incorporating information into the invisible light emitted by the light-emitting device. For example, by including identification information of the light emitting device in the invisible light, it is possible to The user can also operate the second switch to control the invisible light. Depending on the configuration and operation method, information can be included in the invisible light. For example, Using the light emission time and timing as information, click and double click of mouse operation It is also possible to realize the same functions as long press operations. It is possible to use a touch pad, dial, or other input means as a second switch. In order to include information in invisible light, for example, the pulse position can be input. PPM (Pulse Position Modulation) and other modulation methods It is preferable to superimpose the data onto the invisible light by a modulation method.

[0042] Here, the display element and the first light receiving element provided in the display unit of the display device are formed on the same substrate. In this case, it is preferable to manufacture an organic display device having an organic compound in a light-emitting layer. An electroluminescent element (organic EL element) containing an organic compound in the active layer is used as the first light receiving element. It is preferable to use an organic photodiode including the display element and the first light receiving element. By combining this as part of the manufacturing process, manufacturing costs can be reduced and manufacturing yields can be increased. do.

[0043] Specific examples of the display system, the display device, and the light-emitting device according to one embodiment of the present invention will be described below. The following will explain this with reference to the drawings.

[0044] [Example of display system configuration] FIG. 1A shows a schematic diagram of a display system 10. The display system 10 includes a display device 11 and and a light emitting device 12.

[0045] The light emitting device 12 has a switch 51 and a switch 52 provided on the housing. The light emitting device 12 can emit visible light VL and infrared light IR from the tip of the housing. By operating the switch 51, visible light VL is emitted, and by operating the switch 52, infrared light IR is emitted. are emitted independently. Here, they are designated as switch 51 and switch 52. Each example shows the case where one physical switch is used.

[0046] As shown in FIG. 1A, visible light VL is highly directional light, and infrared light IR is In FIG. 1A, the irradiation area 59 of visible light VL is indicated by a solid line, and the irradiation area 59 of infrared light VL is indicated by a solid line. The irradiation areas 58 of the light IR are indicated by dashed lines.

[0047] As the visible light VL, it is preferable to use a laser beam. For example, a red laser beam (e.g. For example, light with a peak wavelength of 620 nm or more and 700 nm or less), green laser light (for example, (Light with a wavelength of 500 nm or more and 550 nm or less, typically around 532 nm) It is preferable to use a laser beam having a peak wavelength in the visible light region (e.g., For example, light in the range of 350 nm to 750 nm may be used, such as blue, yellow, orange, Laser light of various colors, such as deep blue or purple, can also be used.

[0048] Infrared light (IR) has a peak wavelength in the near infrared region (750 nm to 2500 nm). It is preferable to use light that is located in the direction of the infrared light IR. It is preferable that the viewing angle (or the full angle at half value) is wider than the visible light VL. For example, the full angle at half value is 30 degrees or more, preferably 40 degrees or more, more preferably 50 degrees or more and 180 degrees or less It is preferable to use light that satisfies this condition. Thereby, infrared light IR can be irradiated onto the light receiving unit 30 provided outside the display unit 21 while the display unit 21 is irradiated with the visible light VL as described later.

[0049] The display device 11 includes a display unit 21 and a light receiving unit 30.

[0050] The display unit 21 is an area for displaying an image of the display device 11 and can also be referred to as a screen. Further, the display unit 21 has a function of receiving the visible light VL emitted from the light emitting device 12 and acquiring the position information of the irradiation area 59 irradiated with the visible light VL. Here, the diameter and area of the irradiation area 59 on the display unit 21 are sufficiently smaller (at least less than 1 / 10) than the length and area in the short side direction of the display unit 21.

[0051] A plurality of display elements 23 and a plurality of light receiving elements 24 are arranged in a matrix on the display unit 21. In FIG. 1A, an enlarged view of a part of the display unit 21 is shown. Here, an example is shown in which one pixel 22 includes a display element 23R that exhibits red, a display element 23B that exhibits blue, a display element 23G that exhibits green (hereinafter sometimes collectively referred to as the display element 23), and a light receiving element 24 that receives visible light and converts it into an electrical signal. Although the arrangement interval of the display elements 23 and the arrangement interval of the light receiving elements 24 are the same here, the arrangement interval of the light receiving elements 24 may be made larger than the arrangement interval of the display elements 23.

[0052] ​​​​​​​​​​The array pitch of the elements 24 may be made smaller than the diameter of the irradiation region 59. For example, the array pitch of the light receiving elements 2 4 may be set to 10 mm or less, preferably 5 mm or less, more preferably 3 mm or less . The smaller the array pitch, the higher the accuracy of detecting the position of the irradiation region 59 can be . When the array pitch of the display elements 23 and the array pitch of the light receiving elements 24 are made different, if the array pitch of the light receiving elements 24 is an integer multiple of the array pitch of the display elements 23, the design becomes easy, so this is preferable .

[0053] In addition, as the visible light VL emitted by the light emitting device 12, laser light can be used, so the illuminance of the visible light VL irradiated on the irradiation region 59 is extremely high compared to external light. Therefore, the area of the light receiving elements 24, more specifically the effective light receiving area, can be made sufficiently smaller than the effective light emitting area of the display elements 23 . Therefore, the decrease in the aperture ratio (effective display area ratio) of the display unit 21 due to the provision of the light receiving elements 24 can be made extremely small. Also, regarding the sensitivity of the light receiving elements 24, since high sensitivity is not required, the range of selection of the material used for the active layer of the light receiving elements 24 can be widened, and it can be realized at low cost . The light receiving unit 30 has a function of receiving the infrared light IR emitted by the light emitting device 12 and converting it into an electrical signal . A plurality of light receiving elements for receiving the infrared light IR may be provided in the light receiving unit 30, or it may be configured to have one such light receiving element. Here, an example in which the light receiving unit 30 is provided outside the display unit 21 is shown, but it may be located inside the contour of the display unit 21, or a configuration may be adopted in which an opening that transmits the infrared light IR is provided in the display unit 21 and the light receiving unit 30 is provided at a position overlapping the opening

[0054] . This is also acceptable. When the display unit 21 transmits infrared light IR, a light receiving unit 30 may be provided on the back side of the display unit 21. Similarly, similar to the light receiving element 24 included in the display unit 21, a light receiving element constituting the light receiving unit 30 may be formed on the display unit 21. Alternatively, an element capable of receiving both visible light VL and infrared light IR may be applied to the light receiving element 24, and the display unit 21 may also serve as the light receiving unit 30.

[0055] 〔Configuration Example of Display Device〕 FIG. 1B is a block diagram showing an example of the display device 11. The display device 11 includes a display panel 20, a light receiving unit 30, a control unit 41, a driving unit 42, a driving unit 43, and the like.

[0056] The display panel 20 includes a display unit 21, a driving circuit 25, a driving circuit 26, and the like. The display unit 21 includes a plurality of pixels 22 arranged in a matrix. Here, an example is shown in which the pixel 22 includes a display element 23 and a light receiving element 24.

[0057] The driving circuit 25 is a circuit that controls the driving of the display element 23. For example, a circuit having functions such as a source driver and a gate driver can be applied to the driving circuit 25. The driving circuit 25 drives each pixel 22 according to a signal supplied from the driving unit 42, thereby enabling an image to be displayed on the display unit 21.

[0058] The driving circuit 26 has a function of controlling the driving of the light receiving element 24 and a function of reading an electrical signal output from the light receiving element 24 and outputting it to the driving unit 42. For example, the driving circuit 26 can be applied to a circuit having functions such as a reading circuit including a plurality of sense amplifiers or an AD converter, and a selection circuit for selecting the light receiving element 24.

[0059] ​​​​​​​​​​​​ The light receiving unit 30 includes at least one light receiving element 31. The light receiving unit 30 has a function of driving the light receiving element 31 and a function of outputting an electrical signal output from the light receiving element 31 to the driving unit 43.

[0060] Based on the signal input from the control unit 41, the driving unit 42 generates and outputs a signal to be output to the display panel 20, and converts and outputs a signal input from the display panel 20 into a signal to be output to the control unit 41. The driving unit 42 includes, for example, a timing controller, a DA converter, an AD converter, an amplifier, a buffer, and the like.

[0061] Based on the signal input from the control unit 41, the driving unit 43 generates and outputs a signal to be output to the light receiving unit 30, and converts and outputs a signal input from the light receiving unit 30 into a signal to be output to the control unit 41. The driving unit 43 includes, for example, a timing controller, a DA converter, an AD converter, an amplifier, a buffer, and the like.

[0062] In FIG. 1B, the signal S1 and the signal S2 input to the control unit 41 and the signal S3 output from the control unit 41 are indicated by arrows. The signal S1 includes data such as the position information of the irradiation area 59 of the visible light VL received by the display unit 21. The signal S2 includes data related to the infrared light IR received by the light receiving unit 30. The control unit 41 can execute various processes based on the signal S2 and the signal S3. Further, based on the process, a signal S3 including image data to be displayed on the display unit 21 can be generated and output to the driving unit 42.

[0063] As the control unit 41, for example, a CPU (Central Processing Uni t), or a configuration having a processor such as a GPU (Graphics Processing Unit). The control unit 41 interprets and executes instructions from various programs by the processor to perform various data processing and program controls. Programs that can be executed by the processor may be stored in the memory area of the processor, or may be stored in a different memory module. It can be configured to have. The control unit 41 interprets and executes instructions from various programs by the processor to perform various data processing and program controls. Programs that can be executed by the processor may be stored in the memory area of the processor, or may be stored in a different memory module. It can be configured to have. The control unit 41 interprets and executes instructions from various programs by the processor to perform various data processing and program controls. Programs that can be executed by the processor may be stored in the memory area of the processor, or may be stored in a different memory module. It can be configured to have. The control unit 41 interprets and executes instructions from various programs by the processor to perform various data processing and program controls. Programs that can be executed by the processor may be stored in the memory area of the processor, or may be stored in a different memory module. It can be configured to have. The control unit 41 interprets and executes instructions from various programs by the processor to perform various data processing and program controls. Programs that can be executed by the processor may be stored in the memory area of the processor, or may be stored in a different memory module.

[0064] Figures 2A and 2B show different configuration examples of the display device 11.

[0065] The configuration shown in Figure 2A shows an example where the display device 11 is divided into a display module 15 and a control device 16. For example, it is an example when a computer is used as the control device 16. At this time, the display module 15 can function as a monitor device or a television device that can be connected to the computer by a cable or wireless communication. The configuration shown in Figure 2A shows an example where the display device 11 is divided into a display module 15 and a control device 16. For example, it is an example when a computer is used as the control device 16. At this time, the display module 15 can function as a monitor device or a television device that can be connected to the computer by a cable or wireless communication. The configuration shown in Figure 2A shows an example where the display device 11 is divided into a display module 15 and a control device 16. For example, it is an example when a computer is used as the control device 16. At this time, the display module 15 can function as a monitor device or a television device that can be connected to the computer by a cable or wireless communication. The configuration shown in Figure 2A shows an example where the display device 11 is divided into a display module 15 and a control device 16. For example, it is an example when a computer is used as the control device 16. At this time, the display module 15 can function as a monitor device or a television device that can be connected to the computer by a cable or wireless communication.

[0066] The display module 15 has a display panel 20, a light receiving unit 30, a driving unit 42a, and a driving unit 43a. The control device 16 has a control unit 41, a driving unit 42b, and a driving unit 43b. The display module 15 has a display panel 20, a light receiving unit 30, a driving unit 42a, and a driving unit 43a. The control device 16 has a control unit 41, a driving unit 42b, and a driving unit 43b.

[0067] The driving unit 42a and the driving unit 42b each have a function as an interface for communication between the display module 15 and the control device 16, and in addition to this, this pair has the same function as the driving unit 42 described above. For example, the driving unit 42a and the driving unit 42b can each execute encoding, multiplexing, etc. of electrical signals according to the communication standard, and transmit signals between them. Similarly, the driving unit 43a and the driving unit 43b can also each function as an interface for communication between the display module 15 and the control device 16, and in addition to this, this pair has the same function as the driving unit 43 described above. For example, the driving unit 43a and the driving unit 43b can each execute encoding, multiplexing, etc. of electrical signals according to the communication standard, and transmit signals between them. The driving unit 42a and the driving unit 42b each have a function as an interface for communication between the display module 15 and the control device 16, and in addition to this, this pair has the same function as the driving unit 42 described above. For example, the driving unit 42a and the driving unit 42b can each execute encoding, multiplexing, etc. of electrical signals according to the communication standard, and transmit signals between them. The driving unit 42a and the driving unit 42b each have a function as an interface for communication between the display module 15 and the control device 16, and in addition to this, this pair has the same function as the driving unit 42 described above. For example, the driving unit 42a and the driving unit 42b can each execute encoding, multiplexing, etc. of electrical signals according to the communication standard, and transmit signals between them. The driving unit 42a and the driving unit 42b each have a function as an interface for communication between the display module 15 and the control device 16, and in addition to this, this pair has the same function as the driving unit 42 described above. For example, the driving unit 42a and the driving unit 42b can each execute encoding, multiplexing, etc. of electrical signals according to the communication standard, and transmit signals between them. The driving unit 42a and the driving unit 42b each have a function as an interface for communication between the display module 15 and the control device 16, and in addition to this, this pair has the same function as the driving unit 42 described above. For example, the driving unit 42a and the driving unit 42b can each execute encoding, multiplexing, etc. of electrical signals according to the communication standard, and transmit signals between them. It has a function as a face.

[0068] Here, for the sake of easy explanation, the drive unit 42a and the drive unit 43a, or the drive unit 4 2b and the drive unit 43b are each separately shown, but they can also be realized by one component tor.

[0069] The configuration shown in FIG. 2B shows an example in which the display device 11 is divided into a display module 15a, a light receiving module 15 b, and a control device 16. Each configuration of the display module 15a and the light receiving module 15b is the same as each configuration of the display module 15 shown in FIG. 2A. is the same.

[0070] 〔Configuration Example of Light Emitting Device〕 FIG. 1C is a block diagram showing an example of the light emitting device 12. The light emitting device 12 includes a switch 5 1, a switch 52, a light emitting element 53, a light emitting element 54, a drive unit 55, a signal generation unit 56, a drive unit 57, etc.

[0071] The light emitting element 53 functions as a light source that emits visible light VL which is visible laser light. As the light emitting element 53, it is particularly preferable to use a semiconductor laser element because the light emitting device 12 can be made lightweight. Therefore, it is preferable.

[0072] Examples of the semiconductor laser element that can be used for the light emitting element 53 include an edge emitting laser (EE L: Edge Emitting Laser), a surface emitting laser (SEL: Surfac e Emitting Laser), etc. Examples of the surface emitting laser include a vertical cavity surface emitting laser (VCSEL: Vertical Cavity Surface Em itting Laser), or an external resonator type vertical surface emitting laser (VECSEL: itting Laser), etc. Vertical External Cavity Surface Emittin g Laser).

[0073] The light emitting element 53 is a light emitting element conforming to the Japanese Industrial Standards (JIS C 6802) or the IEC Standards Classified according to the IEC 60825-1 standard, Class 1, Class 1M, Class 2, or It is preferable to use a semiconductor laser element conforming to Class 2M. For example, It is preferable to use a semiconductor laser element with a power value of less than 1 mW or in the vicinity of 0.2 mW.

[0074] The driving unit 55 controls whether the light emitting element 53 emits light or not in response to the operation of the switch 51. The simplest configuration of the driving unit 55 is a physical switch as the switch 51. By using the above, the switch 51, the power source, and the light emitting element 53 can be connected in series. The driving unit 55 controls the configuration of the switch 51 and the light emitting element 53, or the light emission of the light emitting element 53. Depending on the method, etc., an appropriate circuit, etc. can be used.

[0075] The light emitting element 54 functions as a light source that emits infrared light IR. A light emitting diode (LED) is preferably used. This can be done.

[0076] The light-emitting diodes are bullet-type and surface mount (SMD: Surface Mount) Device type or Chip On Board (COB) type The cost can be reduced by using bullet-type LEDs. By using surface mount LEDs or chip-on-board LEDs, brightness and durability can be improved. It is possible to do so.

[0077] The signal generation unit 56 is a circuit that generates a signal for superimposing data on the infrared light IR emitted by the light emitting element 54. According to the operation of the switch 52, the signal generation unit 56 can generate a signal according to a modulation method such as a pulse position modulation method and output it to the drive unit 57.

[0078] The drive unit 57 has a function of controlling the light emission and non-light emission of the light emitting element 54 based on the signal generated by the signal generation unit 56.

[0079] The signal generation unit 56 and the drive unit 57 can also be collectively referred to as an oscillation device. The oscillation device has a function of controlling the light emission state of the light emitting element 54 according to the input to the switch 52.

[0080] Here, the data generated by the signal generation unit 56 preferably includes the identification data of the device. This enables a plurality of users to operate the display system 10 simultaneously.

[0081] In FIG. 1C, the light emitting device 12 shows independent configurations for the line from the switch 51 to the light emitting element 53 and the line from the switch 52 to the light emitting element 54. With such a configuration, the light emitting device 12 can be configured extremely simply, thereby reducing the manufacturing cost. Note that the configuration of the light emitting device 12 is not limited to this, and it may have at least a light emitting element 53, a light emitting element 54, and operation means such as a switch.

[0082] [Example of processing of display system] The display system according to one aspect of the present invention can execute various processes according to the position information of the irradiation area of the visible light emitted from the light emitting device operated by the user and the information included in the infrared light. ​​​​​Much of the processing by the display system involves changes in the image displayed on the display unit. At this time, the display system executes a process of generating a new image and has a function of updating the screen.

[0083] Furthermore, the display system according to one aspect of the present invention can remotely operate the screen from a physically distant location by a light emitting device that also functions as a laser pointer for the user. Hereinafter, examples of operations executable by the user will be described with reference to the drawings through the processing of the display system.

[0084] Note that the processing method, operation method, operation method, or display method realized by the display system 10 shown below can be described as a program, for example. Also, the program describing the processing method , operation method, operation method, or display method described below is stored in a non-temporary storage medium and read out and executed by an arithmetic device or the like included in the control unit 41 of the display system 10. That is, the processing method, operation method, operation method, or display method described below, a program for causing hardware to execute it, or a non-temporary storage medium storing the program is one aspect of the present invention.

[0085] 〔Example of operation method 1〕 FIG. 3A schematically shows a display device 11 and a user 60 who operates the screen with a light emitting device 12.

[0086] The user 60 can irradiate visible light VL by operating the switch 51 of the light emitting device 12. Also, by operating the switch 52 of the light emitting device 12, various processes can be executed on the display system 10 by infrared light IR (not shown).

[0087] The display device 11 has a light-receiving part 30 provided in an area that does not overlap with the display part 21. Also, an object 61 is displayed on the display part 21.

[0088] In FIG. 3A, it shows a state where the user 60 moves the object 61 displayed on the display part 21 by the light-emitting device 12.

[0089] The irradiation area 59 is located on a part of the object 61 (the upper part of the object 61 in FIG. 3A). Visible light VL is irradiated so as to move the irradiation area 59, and by moving the irradiation area 59, the object 61 can be moved along the trajectory of the irradiation area 59.

[0090] This operation corresponds to a drag operation when using a mouse. For example, the user 60 drags the object 61 by moving the irradiation area 59 while continuously pressing the switch 52, and releases the switch 52 to determine the position of the object 61.

[0091] Note that the function of the drag operation is just an example, and the user 60 can intuitively perform operations similar to click, double-click, long-press operations, etc., which are operations when using a conventional mouse, using the light-emitting device 12. Also, by providing two or more switches 52, the functionality of the light-emitting device 12 can be enhanced, similar to a mouse having two or more buttons.

[0092] FIG. 3B shows a state where the display system 10 is executing a drawing function. The user 60 can draw a figure (object 62) along the trajectory of the irradiation area 59 on the display part 21 by operating the light-emitting device 12.

[0093] Although not shown here, there are also icons for switching the thickness, type, color, etc. of the lines to be drawn. Images such as lines, rectangles, polygons, circles, ellipses, etc. may be displayed on the display unit 21. It may have a function for drawing various shapes such as circles and semicircles.

[0094] 3C shows a state in which the display system 10 is caused to execute a character input function. 60 is a device for displaying characters (objects 63) by operating the light-emitting device 12 freehand. The display system 10 can then render the shape of the object 63 that most closely resembles the shape of the object. Characters can be recognized and displayed as text information.

[0095] In FIG. 3C, the user 60 draws the number "5", and the number "5" is displayed as text information. The indicated state is shown.

[0096] [Operation method example 2] The display system 10 has a function of recognizing the trajectory of the illumination area 59 and using this as an input operation. (also called gesture input).

[0097] FIG. 4A shows an example of an enlarged display of information included in an object 66a by gesture input. The figure shows a state in which the operation of the irradiation area 59 is being performed. Then, the user 60 operates the light emitting device 12, so that the object 66a is surrounded by a trajectory 65. The information including the area covered changes to an enlarged object 66b.

[0098] In FIG. 4B, on the contrary, the object 67a is included in the object 67 by gesture input. The figure shows a state in which the information displayed on the screen is being reduced. By operating the light-emitting device 12 so as to draw a rough triangle, the user 60 can create an object 67 a includes information on the range surrounded by the locus 65 and is an object 67 that is reduced and displayed over a wide range changes to b.

[0099] In this way, by adopting a configuration that enables gesture input using the light-emitting device 12, the user 60 can operate the screen more intuitively, thus realizing a more user-friendly display system 10.

[0100] 〔Example of operation method 3〕 A menu for switching the operation mode by the light-emitting device 12 may be displayed on the display unit 21 of the display system 10, and the user 60 may be able to select a function from the menu .

[0101] FIG. 5A shows a state where an object 61 is displayed on the display unit 21. In this state , by bringing the irradiation area 59 closer to the outer peripheral portion of the display unit 21, as shown in FIG. 5B or FIG. 5C , a menu image (object 68) including various icons (here, icons 69a to 69d) appears. In this way, by having a function of hiding the menu image when not needed and displaying the menu image as needed , it is possible to effectively utilize the display area, which is preferable .

[0102] FIG. 5B shows an example where the menu image appears from the side of the display unit 21, and FIG. 5C shows an example where the menu image appears from the upper side of the display unit 21. The position where the menu image appears may be fixed, but if the menu image appears no matter which location on the outer peripheral portion of the display unit 21 the irradiation area 59 is brought closer to , the operability can be further improved. The position of the menu image​ The appearance position is preferably settable by the user. Alternatively, the display of the menu image may be performed by gesture input.

[0103] For example, by selecting the icon 69a shown in FIG. 5C, the operation by the light-emitting device 12 can be switched to the operation mode of the object. Also, by selecting the icon 69b , it can be switched to the drawing mode. Also, by selecting the icon 69c, it can be switched to the operation mode of the background image. Also, by selecting the icon 69d , it can be switched to the gesture input mode.

[0104] In this way, since the display system 10 has the function of switching to various modes, it is not necessary to provide the light-emitting device 12 itself with many functions, and the operation can be performed with a light-emitting device 12 having a simple configuration. Therefore, the manufacturing cost of the light-emitting device 12 can be reduced.

[0105] 〔Example of operation method 4〕 The display system according to one aspect of the present invention can also be operated by a plurality of users using a light-emitting device.

[0106] FIG. 6 shows a state where a meeting is being held using the display system 10. On the display unit 21 of the display device 1 , the materials used for the meeting are displayed.

[0107] Among the people attending the meeting, the user 60a and the user 60b each have a light-emitting device 1 2a or a light-emitting device 12b.

[0108] The user 60a is performing an operation in the drawing mode. In FIG. 6, the light emitted by the light-emitting device 12a ​The irradiation area 59a of the visible light VLa and the handwritten text drawn along the locus of the irradiation area 59a shows the image of the characters (object 64).

[0109] User 60b is using the light emitting device 12b as a laser pointer. User 60b indicates a part of the display unit 21 by the irradiation area 59b of the visible light VLb.

[0110] Different identification information is superimposed on the infrared light IR (not shown) emitted by the light emitting device 12a and the light emitting device 12b, respectively. As a result, user 60a and user 60b can operate the screen independently respectively.

[0111] The visible light VLa emitted by the light emitting device 12a and the visible light VLb emitted by the light emitting device 12b are preferably lights of different wavelengths. Thereby, the irradiation area 59a and the irradiation area 59b can be identified by the wavelength as to which light emitting device they are from, so that users 60a and 60b can operate simultaneously.

[0112] Also, by superimposing on the infrared light IR emitted by the light emitting device 12a and the light emitting device 12b the information on the direction in which the visible light VLa or the visible light VLb is irradiated, the irradiation area 59a and the irradiation area 59b can be identified. For example, the light emitting device 12a and the light emitting device 12 b may have a configuration having sensors (such as acceleration sensors) for detecting their own inclination and orientation, or sensors (such as cameras) for detecting the irradiation direction of the visible light V La or the visible light VLb, etc., and may be configured to superimpose the information obtained by the sensors on the infrared light IR and transmit it. .

[0113] ​Alternatively, the display device 11 may detect the direction and attitude of the light-emitting device 12a and the light-emitting device 12b. The visible light VLa and the visible light VLb are emitted in a direction that is different from the visible light VLb. The device may have a function to recognize the

[0114] FIG. 7 shows a situation in which multiple users are enjoying a game using the display system 10. The display unit 21 displays a moving flying object or an unknown creature as a target. A number of objects 61 are displayed.

[0115] The user 60a and the user 60b place the illuminated area 59a or the illuminated area 59b on the object. In the state where the light source 51 is aligned with the light source 52, the switch 52 for irradiating infrared light IR (not shown) is operated. By doing so, the player can destroy the object 61 and gain points. At the top of the screen, each user's score (referred to as Score) and remaining time (TI ME) is displayed.

[0116] The above is an explanation of examples of operations that the user can perform through the processing of the display system. .

[0117] According to one aspect of the present invention, a display unit is provided with a display device, and a display unit is provided with a display device. It is possible to process information contained in the invisible light received by the sensor and display it on the screen. In addition, one aspect of the present invention is a display system capable of realizing the display system. Another embodiment of the present invention is a light-emitting device capable of implementing the above-described display system. The display device and the light-emitting device that can constitute the display system are manufactured and sold separately. It is possible.

[0118] According to one aspect of the present invention, a highly convenient display system, a display system that can easily operate a screen with a laser pointer, or a display system that can be operated by multiple people on a screen can be realized.

[0119] This embodiment can be implemented in appropriate combination with at least some of the other embodiments described in this specification.

[0120] (Embodiment 2) In this embodiment, a display panel applicable to the display system exemplified in Embodiment 1 will be described with reference to the drawings.

[0121] A display panel according to one aspect of the present invention includes a display element that exhibits visible light and a light receiving element (light receiving device) that receives infrared light. The display element is preferably a light emitting element (also referred to as a light emitting device). Further, the light receiving element is preferably a photoelectric conversion element.

[0122] Here, when a light emitting element is used as the display element, it is preferable to use an EL element such as an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode). Examples of the light emitting substance of the EL element include a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescent material), a substance that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) material), and an inorganic compound (such as a quantum dot material). Further, an LED such as a micro LED (Light Emitting Diode) can also be used as the light emitting element. ivated delayed fluorescence:TADF) material), and an inorganic (Light Emitting Diode) and the like can also be used.

[0123] ​​​​​​​​​​​ As the light-receiving element, for example, a pn-type or pin-type photodiode can be used. The light-receiving element functions as a photoelectric conversion element that detects the light incident on the light-receiving element and generates electric charges. The amount of electric charges generated by the photoelectric conversion element is determined according to the amount of incident light. In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving element. The organic photodiode is easy to be thinned, lightened, and enlarged in area, and also has a high degree of freedom in shape and design, so it can be applied to various display devices.

[0124] The light-emitting element can have, for example, a stacked structure including a light-emitting layer between a pair of electrodes. Also, the light-receiving element can have a stacked structure including an active layer between a pair of electrodes. A semiconductor material can be used for the active layer of the light-receiving element. For example, an inorganic semiconductor material such as silicon can be used.

[0125] In particular, it is preferable to use an organic compound for the active layer of the light-receiving element. At this time, it is preferable to provide one of the electrodes (also referred to as a pixel electrode) of the light-emitting element and the light-receiving element on the same plane. Further, it is more preferable that the other electrode of the light-emitting element and the light-receiving element is an electrode formed by a continuous single conductive layer (also referred to as a common electrode). Furthermore, it is more preferable that the light-emitting element and the light-receiving element have a common layer. Thereby, the manufacturing process for manufacturing the light-emitting element and the light-receiving element can be simplified, the manufacturing cost can be reduced, and the manufacturing yield can be improved.

[0126] Hereinafter, more specific examples will be described with reference to the drawings.

[0127] [Configuration Example 1 of Display Panel] 〔Configuration Example 1-1〕 Fig. 8A shows a schematic cross-sectional view of the display panel 100A.

[0128] The display panel 100A has a light-receiving element 110 and a light-emitting element 190. The light-receiving element 110 has a pixel electrode 111, a common layer 112, an active layer 113, a common layer 114, and a common electrode 115. The light-emitting element 190 has a pixel electrode 191, a common layer 112, a light-emitting layer 193, a common layer 1 14, and a common electrode 115.

[0129] The pixel electrode 111, the pixel electrode 191, the common layer 112, the active layer 113, the light-emitting layer 193, the common layer 114, and the common electrode 115 may each have a single-layer structure or a laminated structure.

[0130] The pixel electrode 111 and the pixel electrode 191 are located on the insulating layer 214. The pixel electrode 111 and the pixel electrode 191 can be formed of the same material and in the same process.

[0131] The common layer 112 is located on the pixel electrode 111 and the pixel electrode 191. The common layer 112 is a layer commonly used for the light-receiving element 110 and the light-emitting element 190.

[0132] The active layer 113 overlaps the pixel electrode 111 via the common layer 112. The light-emitting layer 193 overlaps the pixel electrode 191 via the common layer 112. The active layer 113 contains a first organic compound and the light-emitting layer 193 contains a second organic compound different from the first organic compound.

[0133] The common layer 114 is located on the common layer 112, the active layer 113, and the light-emitting layer 193. The common layer 114 is a layer commonly used for the light-receiving element 110 and the light-emitting element 190.

[0134] ​ The common electrode 115 is connected to the pixel electrode via the common layer 112, the active layer 113, and the common layer 114. The common electrode 115 has a portion overlapping with the electrode 111. The common electrode 115 is connected to the common layer 112 and the light-emitting layer 193. , and has a portion overlapping with the pixel electrode 191 via the common layer 114. The common electrode 115 , which is a layer commonly used by the light receiving element 110 and the light emitting element 190.

[0135] In the display panel of this embodiment, an organic compound is used for the active layer 113 of the light receiving element 110. The light receiving element 110 has layers other than the active layer 113 in common with the light emitting element 190 (EL element). Therefore, in the process of manufacturing the light emitting device 190, the active layer 113 can be formed. By simply adding a process for forming the light receiving element 110, the light emitting element 190 and the light receiving element 110 can be formed in parallel. In addition, the light emitting element 190 and the light receiving element 110 can be formed on the same substrate. Therefore, the light receiving element 110 can be incorporated in the display panel without significantly increasing the number of manufacturing steps. It can be stored.

[0136] In the display panel 100A, the active layer 113 of the light receiving element 110 and the light emitting layer 190 of the light emitting element 193 and 194 are separately manufactured, but the light receiving element 110 and the light emitting element 190 have the same configuration. However, the configuration of the light receiving element 110 and the light emitting element 190 is not limited to this. The element 110 and the light emitting element 190 are fabricated separately from each other in addition to the active layer 113 and the light emitting layer 193. (See display panels 100D, 100E, and 100F described later.) The element 110 and the light emitting element 190 may have one or more layers that are used in common (common layers). This is preferable. It is possible to provide the light receiving element 110 on the display panel without significantly increasing the number of manufacturing steps. can be built in.

[0137] The display panel 100A has a light receiving element 11 0, a light emitting element 190, a transistor 131, a transistor 132, etc. between a pair of substrates (substrate 151 and substrate 152).

[0138] In the light receiving element 110, the common layer 112, the active layer 113, and the common layer 114 located between the pixel electrode 111 and the common electrode 115 respectively can also be referred to as an organic layer (a layer containing an organic compound). The pixel electrode 111 preferably has a function of reflecting visible light. The end of the pixel electrode 111 is covered by the partition wall 216. The common electrode 115 has a function of transmitting visible light.

[0139] The light receiving element 110 has a function of detecting light. Specifically, the light receiving element 110 is a photoelectric conversion element that receives the light 122 incident from the outside through the substrate 152 and converts it into an electrical signal.

[0140] A light shielding layer BM is provided on the surface of the substrate 152 on the side of the substrate 151. The light shielding layer BM has openings at positions overlapping the light receiving element 110 and at positions overlapping the light emitting element 190. By providing the light shielding layer BM it is possible to control the range in which the light receiving element 110 detects light.

[0141] As the light shielding layer BM, a material that blocks the light emission from the light emitting element can be used. The light shielding layer B M preferably absorbs visible light. As the light shielding layer BM, for example, a black matrix can be formed using a metal material, or a resin material containing a pigment (such as carbon black) or a dye, etc. The light shielding layer BM may have a laminated structure of a red color filter, a green color filter, and a blue color filter.

[0142] ​​​​​​ Here, part of the light emitted from the light-emitting element 190 may be reflected within the display panel 100A and incident on the light-receiving element 110. The light-shielding layer BM can suppress the influence of such stray light. For example, when the light-shielding layer BM is not provided, the light 123a emitted from the light-emitting element 190 is reflected by the substrate 152, and the reflected light 123b may be incident on the light-receiving element 110. By providing the light-shielding layer BM, the incidence of the reflected light 123b on the light-receiving element 110 can be suppressed. Thereby, noise can be reduced and the sensitivity of the sensor using the light-receiving element 110 can be increased.

[0143] In the light-emitting element 190, the common layer 112, the light-emitting layer 193, and the common layer 114, which are respectively located between the pixel electrode 191 and the common electrode 115, can also be referred to as an EL layer. The pixel electrode 191 preferably has a function of reflecting visible light. The end portion of the pixel electrode 191 is covered by the partition wall 216. The pixel electrode 111 and the pixel electrode 191 are electrically insulated from each other by the partition wall 216. The common electrode 115 has a function of transmitting visible light.

[0144] The light-emitting element 190 has a function of emitting visible light. Specifically, the light-emitting element 190 is an electroluminescent element that emits light 121 toward the substrate 152 side by applying a voltage between the pixel electrode 191 and the common electrode 115.

[0145] The light-emitting layer 193 is preferably formed so as not to overlap with the light-receiving region of the light-receiving element 110. Thereby, absorption of the light 122 by the light-emitting layer 193 can be suppressed, and the amount of light irradiated on the light-receiving element 110 can be increased.

[0146] ​The pixel electrode 111 is electrically connected to the source or drain of the transistor 131 through an opening provided in the insulating layer 214. The end of the pixel electrode 111 is covered by the partition wall 216. The end of the pixel electrode 111 is covered by the partition wall 216.

[0147] The pixel electrode 191 is electrically connected to the source or drain of the transistor 132 through an opening provided in the insulating layer 214. The end of the pixel electrode 191 is covered by the partition wall 216. The transistor 132 has a function of controlling the driving of the light-emitting element 190. The end of the pixel electrode 191 is covered by the partition wall 216. The transistor 132 has a function of controlling the driving of the light-emitting element 190.

[0148] The transistor 131 and the transistor 132 are in contact with each other on the same layer (the substrate 151 in FIG. 8A).

[0149] At least a part of the circuit electrically connected to the light-receiving element 110 is preferably formed of the same material and in the same process as the circuit electrically connected to the light-emitting element 190. Thereby, the thickness of the display panel can be reduced and the manufacturing process can be simplified as compared with the case where the two circuits are formed separately.

[0150] The light-receiving element 110 and the light-emitting element 190 are preferably each covered by the protective layer 195. In FIG. 8A, the protective layer 195 is provided in contact with the common electrode 115. By providing the protective layer 195, it is possible to suppress the entry of impurities such as water into the light-receiving element 110 and the light-emitting element 190 and improve the reliability of the light-receiving element 110 and the light-emitting element 190. Further, the protective layer 195 and the substrate 152 are bonded together by the adhesive layer 142.

[0151] Note that, as shown in FIG. 9A, a protective layer is provided on the light-receiving element 110 and the light-emitting element 190.​​​​​​​​​​ It may not be necessary. In FIG. 9A, the common electrode 115 and the substrate 152 are bonded together by the adhesive layer 142.

[0152] Also, as shown in FIG. 9B, it may be configured not to have the light-shielding layer BM. As a result, the light-receiving area of the light-receiving element 110 can be increased, so that the sensitivity of the sensor can be further enhanced.

[0153] 〔Configuration Example 1-2〕 FIG. 8B shows a cross-sectional view of the display panel 100B. In the following description of the display panel, the description of the same configuration as the previously described display panel may be omitted.

[0154] The display panel 100B shown in FIG. 8B has a lens 149 in addition to the configuration of the display panel 100A.

[0155] The lens 149 is provided at a position overlapping the light-receiving element 110. In the display panel 100B, the lens 149 is provided in contact with the substrate 152. The lens 149 included in the display panel 100B is a convex lens having a convex surface on the substrate 151 side. Note that a convex lens having a convex surface on the substrate 152 side may be disposed in a region overlapping the light-receiving element 110.

[0156] When both the light-shielding layer BM and the lens 149 are formed on the same surface of the substrate 152, the formation order does not matter. FIG. 8B shows an example in which the lens 149 is formed first, but the light-shielding layer BM may be formed first. In FIG. 8B, the end portion of the lens 149 is covered by the light-shielding layer BM.

[0157] The display panel 100B is configured such that light 122 is incident on the light-receiving element 110 through the lens 149. Having the lens 149, compared to the case without the lens 149, the light-receiving element 1 The amount of light 122 incident on 10 can be increased. Thereby, the sensitivity of the light receiving element 110 can be enhanced.

[0158] As a method for forming the lens used in the display panel of the present embodiment, a lens such as a microlens may be directly formed on the substrate or on the light receiving element or a lens array such as a separately manufactured microlens array may be bonded to the substrate.

[0159] 〔Configuration Example 1-3〕 FIG. 8C shows a schematic cross-sectional view of a display panel 100C. The display panel 100C does not have a substrate 15 1, a substrate 152, and a partition wall 216, and is different from the display panel 100A in that it has a substrate 153, a substrate 154, an adhesive layer 155, an insulating layer 212, and a partition wall 217.

[0160] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The substrate 154 and the protective layer 195 are bonded together by an adhesive layer 142.

[0161] The display panel 100C is configured by transferring an insulating layer 212, a transistor 131, a transistor 132, a light receiving element 110, a light emitting element 190, etc., formed on a production substrate, onto the substrate 153. The substrate 153 and the substrate 154 preferably each have flexibility. Thereby, the flexibility of the display panel 100C can be enhanced. For example, it is preferable to use a resin for each of the substrate 153 and the substrate 154. For example, it is preferable to use a polyester resin such as polyethylene terephthalate (PET

[0162] ), polyethylene naphthalate (PEN), etc., or polyacrylonitrile Resins, acrylic resins, polyimide resins, polymethyl methacrylate resins, polycarbonate (PC) resins, polyethersulfone (PES) resins, polyamide resins (nylon, aramid, etc.), polysiloxane resins, cycloolefin resins, polystyrene resins, polyamideimide resins, polyurethane resins, polyvinyl chloride resins, polyvinylidene chloride resins, polypropylene resins, polytetrafluoroethylene (PTFE) resins, ABS resins, cellulose nanofibers, etc. can be used. For one or both of the substrates 153 and 154, glass with a thickness sufficient to have flexibility may be used.

[0163] For the substrates included in the display panel of the present embodiment, a film with high optical isotropy may be used. Examples of the film with high optical isotropy include triacetyl cellulose (TAC, also referred to as cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic film, etc.

[0164] The partition wall 217 preferably absorbs the light emitted by the light-emitting element. As the partition wall 217, for example, a resin material containing a pigment or a dye can be used to form a black matrix. Also, by using a brown resist material, the partition wall 217 can be constituted by a colored insulating layer.

[0165] The light 123c emitted by the light-emitting element 190 is reflected by the substrate 152 and the partition wall 217, and the reflected light 123d may enter the light-receiving element 110. Further, the light 123c passes through the partition wall 217 and is reflected by a transistor or wiring, etc., and the reflected light enters the light-receiving element 110. This may occur. By the absorption of the light 123c by the partition wall 217, it is possible to suppress the incident of the reflected light 123d on the light receiving element 110. Thereby, noise can be reduced and the sensitivity of the sensor using the light receiving element 110 can be enhanced.

[0166] The partition wall 217 preferably absorbs at least the wavelength of the light detected by the light receiving element 110 . For example, when the light receiving element 110 detects the red light emitted by the light emitting element 190, the partition wall 217 preferably absorbs at least the red light. For example, if the partition wall 217 has a blue color filter, it can absorb the red light 123c and suppress the incident of the reflected light 123d on the light receiving element 110.

[0167] 〔Configuration Example 1-4〕 In the above, an example in which the light emitting element and the light receiving element have two common layers has been shown, but the present invention is not limited to this. Hereinafter, examples in which the configuration of the common layer is different will be described.

[0168] FIG. 10A shows a schematic cross-sectional view of the display panel 100D. The display panel 100D is different from the display panel 10 0A in that it does not have the common layer 114 and has the buffer layer 184 and the buffer layer 194. The buffer layer 184 and the buffer layer 194 may each have a single-layer structure or a laminated structure.

[0169] In the display panel 100D, the light receiving element 110 has the pixel electrode 111, the common layer 112, the active layer 113, the buffer layer 184, and the common electrode 115. Further, in the display panel 100 D, the light emitting element 190 has the pixel electrode 191, the common layer 112, the light emitting layer 193, the buffer layer 194, and the common electrode 115.

[0170] In the display panel 100D, an example is shown in which a buffer layer 184 between the common electrode 115 and the active layer 113 and a buffer layer 194 between the common electrode 115 and the light-emitting layer 193 are separately formed. The buffer layer 184 and the buffer layer 194 can, for example, form one or both of an electron injection layer and an electron transport layer.

[0171] FIG. 10B shows a schematic cross-sectional view of the display panel 100E. The display panel 100E is different from the display panel 10 0A in that it does not have the common layer 112 and has the buffer layer 182 and the buffer layer 192. The buffer layer 182 and the buffer layer 192 may each have a single-layer structure or a laminated structure.

[0172] In the display panel 100E, the light-receiving element 110 has a pixel electrode 111, a buffer layer 182 , an active layer 113, a common layer 114, and a common electrode 115. Also, in the display panel 100 E, the light-emitting element 190 has a pixel electrode 191, a buffer layer 192, a light-emitting layer 193, a common layer 114, and a common electrode 115.

[0173] In the display panel 100E, an example is shown in which a buffer layer 182 between the pixel electrode 111 and the active layer 113 and a buffer layer 192 between the pixel electrode 191 and the light-emitting layer 193 are separately formed. The buffer layer 182 and the buffer layer 192 can, for example, form one or both of a hole injection layer and a hole transport layer.

[0174] FIG. 10C shows a schematic cross-sectional view of the display panel 100F. The display panel 100F does not have the common layer 112 and the common layer 114 and has the buffer layer 182, the buffer layer 184, the buffer layer 1 ​​​It is different from the display panel 100A in that it has 92 and the buffer layer 194.

[0175] In the display panel 100F, the light receiving element 110 includes a pixel electrode 111, a buffer layer 182 , an active layer 113, a buffer layer 184, and a common electrode 115. Also, in the display panel 1 00F, the light emitting element 190 includes a pixel electrode 191, a buffer layer 192, a light emitting layer 193 , a buffer layer 194, and a common electrode 115.

[0176] In the fabrication of the light receiving element 110 and the light emitting element 190, not only the active layer 113 and the light emitting layer 193 can be separated, but other layers can also be separated.

[0177] In the display panel 100F, an example is shown in which the light receiving element 110 and the light emitting element 190 do not have a common layer between a pair of electrodes (the pixel electrode 111 or the pixel electrode 191 and the common electrode 115). The light receiving element 110 and the light emitting element 190 included in the display panel 100F are formed with the pixel electrode 111 and the pixel electrode 191 of the same material and in the same process on the insulating layer 214. After forming the buffer layer 182, the active layer 113, and the buffer layer 184 on the pixel electrode 111, and the buffer layer 192, the light emitting layer 193, and the buffer layer 194 on the pixel electrode 191, respectively, the common electrode 115 is formed so as to cover the buffer layer 184, the buffer layer 194, etc., whereby it can be fabricated.

[0178] Note that the manufacturing order of the stacked structure of the buffer layer 182, the active layer 113, and the buffer layer 184 and the stacked structure of the buffer layer 192, the light emitting layer 193, and the buffer layer 194 is not particularly limited. For example, after forming the buffer layer 182, the active layer 113, and the buffer layer 184, The buffer layer 192, the light-emitting layer 193, and the buffer layer 194 may be fabricated. Conversely, before forming the buffer layer 182, the active layer 113, and the buffer layer 184, the buffer layer 192, the light-emitting layer 193, and the buffer layer 194 may be fabricated. Also, the buffer layer 182, the buffer layer 192, the active layer 113, the light-emitting layer 193, etc. may be alternately formed in this order.

[0179] [Configuration Example 2 of Display Panel] Hereinafter, a more specific configuration example of the display panel will be described.

[0180] [Configuration Example 2-1] FIG. 11 shows a perspective view of the display panel 200A.

[0181] The display panel 200A has a configuration in which the substrate 151 and the substrate 152 are bonded together. In FIG. 11, the substrate 152 is shown by a dashed line.

[0182] The display panel 200A includes a display unit 162, a circuit 164, a wiring 165, etc. In FIG. 11, an example in which an IC (integrated circuit) 173 and an FPC 172 are mounted on the display panel 200A is shown. Therefore, the configuration shown in FIG. 11 can also be referred to as a display module having the display panel 200A, the IC, and the FPC.

[0183] As the circuit 164, a scanning line driving circuit can be used.

[0184] The wiring 165 has a function of supplying signals and power to the display unit 162 and the circuit 164. The signals and power are input from the outside via the FPC 172, or are input to the wiring 165 from the IC 173 instead.

[0185] In FIG. 11, an example is shown in which an IC 173 is provided on a substrate 151 by a COG (Chip On Glass) method, a COF (Chip On Film) method, or the like. As the IC 173, for example, an IC having a scanning line driving circuit, a signal line driving circuit, or the like can be applied. Note that the display panel 200A and the display module may be configured not to have an IC. Also, the IC may be mounted on an FPC by a COF method or the like.

[0186] FIG. 12 shows an example of a cross section when a part of the region including the FPC 172, a part of the region including the circuit 164, a part of the region including the display unit 162, and a part of the region including the end portion of the display panel 200A shown in FIG. 11 are each cut.

[0187] The display panel 200A shown in FIG. 12 has a transistor 201, a transistor 205, a transistor 206, a light-emitting element 190, a light-receiving element 110, and the like between a substrate 151 and a substrate 152.

[0188] The substrate 152 and the insulating layer 214 are adhered via an adhesive layer 142. For sealing the light-emitting element 190 and the light-receiving element 110, a solid sealing structure, a hollow sealing structure, or the like can be applied. In FIG. 12, a space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 is filled with an inert gas (such as nitrogen or argon), and a hollow sealing structure is applied. The adhesive layer 142 may be provided so as to overlap with the light-emitting element 190. Also, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 may be filled with a resin different from the adhesive layer 142.

[0189] The light-emitting element 190 includes a pixel electrode 191, a common layer 112, and a light-emitting layer 193 from the insulating layer 214 side. It has a stacked structure laminated in the order of the pixel electrode 19, the common layer 114, and the common electrode 115. The pixel electrode 191 is connected to the conductive layer 22b of the transistor 206 through an opening provided in the insulating layer 214. The transistor 206 has a function of controlling the driving of the light-emitting element 190. The end of the pixel electrode 191 is covered by the partition wall 216. The pixel electrode 191 contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light.

[0190] The light-receiving element 110 has a stacked structure laminated in the order of the pixel electrode 111, the common layer 112, the active layer 113 the common layer 114, and the common electrode 115. The pixel electrode 11 1 is electrically connected to the conductive layer 22b of the transistor 205 through an opening provided in the insulating layer 214. The end of the pixel electrode 111 is covered by the partition wall 216. The pixel electrode 111 contains a material that reflects visible light, and the common electrode 115 transmits visible light and contains a material that transmits visible light.

[0191] The light emitted by the light-emitting element 190 is emitted toward the substrate 152 side. Further, light enters the light-receiving element 110 through the substrate 152 and the space 143. It is preferable to use a material with high transparency to visible light for the substrate 152.

[0192] The pixel electrode 111 and the pixel electrode 191 can be manufactured from the same material and by the same process. The common layer 112, the common layer 114, and the common electrode 115 are used for both the light-receiving element 110 and the light-emitting element 1 90. The light-receiving element 110 and the light-emitting element 190 can have the same configuration except that the configurations of the active layer 113 and the light-emitting layer 193 are different. Thereby, the manufacturing process ​Without significantly increasing the process, the light receiving element 110 can be built into the display panel 100A. It can be done.

[0193] On the surface of the substrate 152 on the side of the substrate 151, a light shielding layer BM is provided. The light shielding layer BM has openings at positions overlapping the light receiving element 110 and positions overlapping the light emitting element 190. By providing the light shielding layer BM, the range in which the light receiving element 110 detects light can be controlled. Also, by having the light shielding layer BM, direct incidence of light from the light emitting element 190 to the light receiving element 110 can be suppressed. Therefore, a sensor with less noise and high sensitivity can be realized. The light shielding layer BM has openings at positions overlapping the light receiving element 110 and positions overlapping the light emitting element 190. By providing the light shielding layer BM, the range in which the light receiving element 110 detects light can be controlled. Also, by having the light shielding layer BM, direct incidence of light from the light emitting element 190 to the light receiving element 110 can be suppressed. Therefore, a sensor with less noise and high sensitivity can be realized. By providing the light shielding layer BM, the range in which the light receiving element 110 detects light can be controlled. Also, by having the light shielding layer BM, direct incidence of light from the light emitting element 190 to the light receiving element 110 can be suppressed. Therefore, a sensor with less noise and high sensitivity can be realized. By having the light shielding layer BM, direct incidence of light from the light emitting element 190 to the light receiving element 110 can be suppressed. Therefore, a sensor with less noise and high sensitivity can be realized. Therefore, a sensor with less noise and high sensitivity can be realized.

[0194] The transistor 201, the transistor 205, and the transistor 206 are all formed on the substrate 151. These transistors can be manufactured by the same material and the same process. These transistors can be manufactured by the same material and the same process. It can be manufactured.

[0195] On the substrate 151, an insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided in this order. A part of the insulating layer 211 functions as a gate insulating layer of each transistor. A part of the insulating layer 213 functions as a gate insulating layer of each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and has a function as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistor are not limited, and each may be a single layer or two or more layers. On the substrate 151, an insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided in this order. A part of the insulating layer 211 functions as a gate insulating layer of each transistor. A part of the insulating layer 213 functions as a gate insulating layer of each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and has a function as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistor are not limited, and each may be a single layer or two or more layers. A part of the insulating layer 213 functions as a gate insulating layer of each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and has a function as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistor are not limited, and each may be a single layer or two or more layers. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and has a function as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistor are not limited, and each may be a single layer or two or more layers. The insulating layer 214 is provided to cover the transistor and has a function as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistor are not limited, and each may be a single layer or two or more layers. The number of gate insulating layers and the number of insulating layers covering the transistor are not limited, and each may be a single layer or two or more layers. It is okay.

[0196] It is preferable to use a material in which impurities such as water and hydrogen hardly diffuse in at least one of the insulating layers covering the transistor. Thereby, the insulating layer can function as a barrier layer. It is preferable to use a material in which impurities such as water and hydrogen hardly diffuse in at least one of the insulating layers covering the transistor. Thereby, the insulating layer can function as a barrier layer. It can be cut. By adopting such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, and the reliability of the display device can be improved. As the insulating layer 211, the insulating layer 213, and the insulating layer 215, it is preferable to use an inorganic insulating film respectively. As the inorganic insulating film, for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, or any other inorganic insulating film can be used. Also, a hafnium oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, etc. may be used. Further, two or more of the above-mentioned insulating films may be laminated and used.

[0197] It is preferable to use an inorganic insulating film for each of the insulating layer 211, the insulating layer 213, and the insulating layer 215. As the inorganic insulating film, for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, or any other inorganic insulating film can be used. Also, a hafnium oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, etc. may be used. Further, two or more of the above-mentioned insulating films may be laminated and used. As the inorganic insulating film, for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, or any other inorganic insulating film can be used. Also, a hafnium oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, etc. may be used. Further, two or more of the above-mentioned insulating films may be laminated and used. As the inorganic insulating film, for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, or any other inorganic insulating film can be used. Also, a hafnium oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, etc. may be used. Further, two or more of the above-mentioned insulating films may be laminated and used. As the inorganic insulating film, for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, or any other inorganic insulating film can be used. Also, a hafnium oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, etc. may be used. Further, two or more of the above-mentioned insulating films may be laminated and used. As the inorganic insulating film, for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, or any other inorganic insulating film can be used. Also, a hafnium oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, etc. may be used. Further, two or more of the above-mentioned insulating films may be laminated and used. As the inorganic insulating film, for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, or any other inorganic insulating film can be used. Also, a hafnium oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, etc. may be used. Further, two or more of the above-mentioned insulating films may be laminated and used. It is also possible to laminate and use two or more of the above-mentioned insulating films.

[0198] Here, the organic insulating film often has lower barrier properties than the inorganic insulating film. Therefore, it is preferable that the organic insulating film has an opening near the end of the display panel 200A. Thereby, the diffusion of impurities from the end of the display panel 200A through the organic insulating film can be suppressed. Or, the organic insulating film may be formed such that the end of the organic insulating film is located inside the end of the display panel 200A so that the organic insulating film is not exposed at the end of the display panel 200A. Here, the organic insulating film often has lower barrier properties than the inorganic insulating film. Therefore, it is preferable that the organic insulating film has an opening near the end of the display panel 200A. Thereby, the diffusion of impurities from the end of the display panel 200A through the organic insulating film can be suppressed. Or, the organic insulating film may be formed such that the end of the organic insulating film is located inside the end of the display panel 200A so that the organic insulating film is not exposed at the end of the display panel 200A. Here, the organic insulating film often has lower barrier properties than the inorganic insulating film. Therefore, it is preferable that the organic insulating film has an opening near the end of the display panel 200A. Thereby, the diffusion of impurities from the end of the display panel 200A through the organic insulating film can be suppressed. Or, the organic insulating film may be formed such that the end of the organic insulating film is located inside the end of the display panel 200A so that the organic insulating film is not exposed at the end of the display panel 200A. Here, the organic insulating film often has lower barrier properties than the inorganic insulating film. Therefore, it is preferable that the organic insulating film has an opening near the end of the display panel 200A. Thereby, the diffusion of impurities from the end of the display panel 200A through the organic insulating film can be suppressed. Or, the organic insulating film may be formed such that the end of the organic insulating film is located inside the end of the display panel 200A so that the organic insulating film is not exposed at the end of the display panel 200A. Here, the organic insulating film often has lower barrier properties than the inorganic insulating film. Therefore, it is preferable that the organic insulating film has an opening near the end of the display panel 200A. Thereby, the diffusion of impurities from the end of the display panel 200A through the organic insulating film can be suppressed. Or, the organic insulating film may be formed such that the end of the organic insulating film is located inside the end of the display panel 200A so that the organic insulating film is not exposed at the end of the display panel 200A. Here, the organic insulating film often has lower barrier properties than the inorganic insulating film. Therefore, it is preferable that the organic insulating film has an opening near the end of the display panel 200A. Thereby, the diffusion of impurities from the end of the display panel 200A through the organic insulating film can be suppressed. Or, the organic insulating film may be formed such that the end of the organic insulating film is located inside the end of the display panel 200A so that the organic insulating film is not exposed at the end of the display panel 200A.

[0199] As the insulating layer 214 that functions as a planarization layer, an organic insulating film is suitable. As the material that can be used for the organic insulating film, examples include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene-based resin, phenol resin, and precursors of these resins. As the insulating layer 214 that functions as a planarization layer, an organic insulating film is suitable. As the material that can be used for the organic insulating film, examples include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene-based resin, phenol resin, and precursors of these resins. As the insulating layer 214 that functions as a planarization layer, an organic insulating film is suitable. As the material that can be used for the organic insulating film, examples include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene-based resin, phenol resin, and precursors of these resins. As the insulating layer 214 that functions as a planarization layer, an organic insulating film is suitable. As the material that can be used for the organic insulating film, examples include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene-based resin, phenol resin, and precursors of these resins.

[0200] In the region 228 shown in FIG. 12, an opening is formed in the insulating layer 214. Thus, even when an organic insulating film is used for the insulating layer 214, diffusion of impurities from the outside into the display unit 162 through the insulating layer 214 can be suppressed. Therefore, the reliability of the display panel 200A can be enhanced. The transistors 201, 205, and 206 include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to a plurality of layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231. The structure of the transistors included in the display panel of the present embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverse staggered transistor, or the like can be used. Also, either a top gate type or a bottom gate type transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed. The transistors 201, 205, and 206 are configured such that a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates are connected

[0201]

[0202]

[0203] ​​​​​​​​​​​​​​Subsequently, the transistor may be driven by supplying the same signal to these. Or , of the two gates, a potential for controlling the threshold voltage is applied to one, and for driving to the other by applying a potential, the threshold voltage of the transistor may be controlled.

[0204] The crystallinity of the semiconductor material used for the transistor is not particularly limited either, and an amorphous semiconductor, a single crystal semiconductor, or a semiconductor having crystallinity other than a single crystal (microcrystalline semiconductor, polycrystalline semiconductor , or a semiconductor having a crystal region in part) may be used. It is preferable to use a single crystal semiconductor or a semiconductor having crystallinity because deterioration of transistor characteristics can be suppressed.

[0205] The semiconductor layer of the transistor preferably has a metal oxide (also referred to as an oxide semiconductor). Or, the semiconductor layer of the transistor may have silicon. As the silicon , amorphous silicon, crystalline silicon (such as low-temperature polysilicon, single crystal silicon etc.) can be mentioned.

[0206] The semiconductor layer is, for example, indium and M (M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium , zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) and zinc , and preferably has them. In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0207] In particular, as the semiconductor layer, indium (In), gallium (Ga), and zinc (Zn) are It is preferable to use an oxide containing IGZO (also referred to as IGZO).

[0208] When the semiconductor layer is an In-M-Zn oxide, the In-M-Zn oxide is deposited. The sputtering target preferably has an atomic ratio of In to M of 1 or more. The atomic ratio of the metal elements in such a sputtering target is In:M:Zn. =1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=2:1:3, In: M:Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4.1 , In:M:Zn=5:1:3, In:M:Zn=5:1:6, In:M:Zn=5:1 :7, In:M:Zn=5:1:8, In:M:Zn=6:1:6, In:M:Zn=5 :2:5 etc.

[0209] When a sputtering target containing a polycrystalline oxide is used, This is preferable because it is easy to form a semiconductor layer having crystallinity. The atomic ratio is the plus or minus of the atomic ratio of the metal elements contained in the sputtering target. For example, the composition of the sputtering target used for the semiconductor layer is In the case of In:Ga:Zn=4:2:4.1 [atomic ratio], the composition of the semiconductor layer formed is The atomic ratio may be close to In:Ga:Zn=4:2:3.

[0210] In addition, when the atomic ratio is described as In:Ga:Zn=4:2:3 or in the vicinity, When the atomic ratio of Ga is 4, the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or less. The atomic ratio of In:Ga:Zn is 5:1:6 or less. When it is described that it is in the vicinity of, when the atomic ratio of In is 5, the atomic ratio of Ga is 0. It is more than 1 and 2 or less, and includes the case where the atomic ratio of Zn is 5 or more and 7 or less. Also, the original When it is described that the atomic ratio is In:Ga:Zn = 1:1:1 or in the vicinity thereof, when the atomic ratio of In is 1 the atomic ratio of Ga is more than 0.1 and 2 or less, and the atomic ratio of Zn is more than 0.1 and 2 or less. is included.

[0211] The transistors included in the circuit 164 and the transistors included in the display unit 162 may have the same structure or may have different structures. The structures of the plurality of transistors included in the circuit 164 may all be the same or there may be two or more types. Similarly, the structures of the plurality of transistors included in the display unit 162 may all be the same or there may be two or more types.

[0212] A connection portion 204 is provided in a region of the substrate 151 where the substrate 152 does not overlap. In the connection portion 204, the wiring 165 is electrically connected to the FPC 172 via the conductive layer 166 and the connection layer 242 The upper surface of the connection portion 204 has the conductive layer 166 obtained by processing the same conductive film as the pixel electrode 191 exposed. Thereby, the connection portion 204 and the FPC 172 can be electrically connected via the connection layer 242 .

[0213] Various optical members can be arranged outside the substrate 152. Examples of the optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an antireflection layer, and a condensing film, etc. Also, outside the substrate 152, an antistatic film for suppressing the adhesion of dust, a water-repellent film for making it difficult for dirt to adhere , a hard coat film for suppressing the generation of scratches during use, a shock absorption layer, etc. It may be placed.

[0214] The substrates 151 and 152 are made of glass, quartz, ceramic, sapphire, Resin or the like can be used. The substrate 151 and the substrate 152 are made of a flexible material. This can increase the flexibility of the display panel.

[0215] The adhesive layer may be a light-curing adhesive such as an ultraviolet-curing adhesive, a reaction-curing adhesive, or a heat-curing adhesive. Various curing adhesives such as viscoelastic adhesives, anaerobic adhesives, etc. can be used. Epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, E VA (ethylene vinyl acetate) resin, etc. In particular, the moisture permeability of epoxy resin, etc. A material with low adhesion is preferable. Two-part mixed resin may also be used. It may be used.

[0216] The connection layer 242 is an anisotropic conductive film (ACF). Inductive Film), Anisotropic Conductive Paste (ACP) Conductive Paste) can be used.

[0217] The light emitting element 190 may be a top emission type, a bottom emission type, a dual emission type, or a The electrode on the light extraction side uses a conductive film that transmits visible light. It is preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted.

[0218] The light-emitting element 190 has at least a light-emitting layer 193. As other layers, a layer containing a substance with high hole injection property, a substance with high hole transport property, a hole blocking material, an electron transporting substance with high property, a substance with high electron injection property, or a bipolar substance (a substance with high electron transport property and high hole transport property), etc. may be further included. For example, the common layer 112 preferably has one or both of a hole injection layer and a hole transport layer. For example, the common layer 114 preferably has one or both of an electron transport layer and an electron injection layer.

[0219] Either a low molecular weight compound or a high molecular weight compound can be used for the common layer 112, the light emitting layer 193, and the common layer 114, and an inorganic compound may be included. The layers constituting the common layer 112, the light emitting layer 193, and the common layer 114 can be formed by methods such as a vapor deposition method (including a vacuum vapor deposition method), a transfer printing method, a printing method, an inkjet method, a coating method, etc. The light emitting layer 193 may have an inorganic compound such as a quantum dot as a light emitting material.

[0220] The active layer 113 of the light receiving element 110 contains a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon

[0221] , and organic semiconductors containing organic compounds. In this embodiment, an example of using an organic semiconductor as the semiconductor included in the active layer is shown. By using an organic semiconductor, the light emitting layer 193 of the light emitting element 190 and the active layer 113 of the light receiving element 110 can be formed by the same method (for example, the vacuum vapor deposition method), and it is preferable because the manufacturing apparatus can be shared. Examples of the material of the n-type semiconductor included in the active layer 113 include electron-accepting organic semiconductor materials such as fullerenes (for example, C , C

[0222] , etc.) or derivatives thereof. Further, the active layer 11 60 、C 70 and so on) or derivatives thereof, etc. Examples of p-type semiconductor materials include Copper(II ) phthalocyanine (CuPc), Tetraphenyldibenzoperiflanthene (DBP), and electron-donating organic semiconductor materials such as Zinc Phthalocyanine (ZnPc).

[0223] For example, the active layer 113 is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor.

[0224] In addition to the gate, source, and drain of the transistor, materials that can be used for conductive layers such as various wirings and electrodes constituting the display panel include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys mainly composed of these metals. A film containing these materials can be used as a single layer or in a laminated structure. In addition, as conductive materials having translucency, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene can be used. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing the metal materials can be used. Alternatively, nitrides of the metal materials (for example, titanium nitride) may be used. Note that metal materials, alloy materials (or their nitrides

[0225] ​​​​​​​​​​​When using (a chemical compound), it is preferably made thin enough to have light transmittance. Also, the laminated film of the above material can be used as a conductive layer. For example, using a laminated film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These can also be used for conductive layers such as various wirings and electrodes constituting the display panel, and conductive layers (conductive layers functioning as pixel electrodes and common electrodes) of the display element. For example, when using a laminated film of an alloy of silver and magnesium and indium tin oxide, it is preferable because conductivity can be enhanced. These can be used for conductive layers such as various wirings and electrodes constituting the display panel, and conductive layers (conductive layers functioning as pixel electrodes and common electrodes) of the display element. These can also be used for conductive layers such as various wirings and electrodes constituting the display panel, and conductive layers (conductive layers functioning as pixel electrodes and common electrodes) of the display element.

[0226] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxynitride, silicon nitride, and aluminum oxide. Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxynitride, silicon nitride, and aluminum oxide. Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxynitride, silicon nitride, and aluminum oxide.

[0227] 〔Configuration Example 2-2〕 Fig. 13A shows a cross-sectional view of the display panel 200B. The display panel 200B is mainly different from the display panel 200A in that it has a lens 149 and a protective layer 195. By providing a protective layer 195 that covers the light receiving element 110 and the light emitting element 190, diffusion of impurities such as water into the light receiving element 110 and the light emitting element 190 can be suppressed, and the reliability of the light receiving element 110 and the light emitting element 190 can be enhanced.

[0228] By providing a protective layer 195 that covers the light receiving element 110 and the light emitting element 190, diffusion of impurities such as water into the light receiving element 110 and the light emitting element 190 can be suppressed, and the reliability of the light receiving element 110 and the light emitting element 190 can be enhanced. 0 and the light emitting element 190, diffusion of impurities such as water into the light receiving element 110 and the light emitting element 190 can be suppressed, and the reliability of the light receiving element 110 and the light emitting element 190 can be enhanced. By providing a protective layer 195 that covers the light receiving element 110 and the light emitting element 190, diffusion of impurities such as water into the light receiving element 110 and the light emitting element 190 can be suppressed, and the reliability of the light receiving element 110 and the light emitting element 190 can be enhanced.

[0229] In the region 228 near the end of the display panel 200B, it is preferable that the insulating layer 215 and the protective layer 195 are in contact with each other through the opening of the insulating layer 214. In particular, it is preferable that the inorganic insulating film of the insulating layer 215 and the inorganic insulating film of the protective layer 195 are in contact with each other. This suppresses diffusion of impurities from the outside to the display unit 162 through the organic insulating film. In the region 228 near the end of the display panel 200B, it is preferable that the insulating layer 215 and the protective layer 195 are in contact with each other through the opening of the insulating layer 214. In particular, it is preferable that the inorganic insulating film of the insulating layer 215 and the inorganic insulating film of the protective layer 195 are in contact with each other. In the region 228 near the end of the display panel 200B, it is preferable that the insulating layer 215 and the protective layer 195 are in contact with each other through the opening of the insulating layer 214. In particular, it is preferable that the inorganic insulating film of the insulating layer 215 and the inorganic insulating film of the protective layer 195 are in contact with each other. This suppresses diffusion of impurities from the outside to the display unit 162 through the organic insulating film. In the region 228 near the end of the display panel 200B, it is preferable that the insulating layer 215 and the protective layer 195 are in contact with each other through the opening of the insulating layer 214. In particular, it is preferable that the inorganic insulating film of the insulating layer 215 and the inorganic insulating film of the protective layer 195 are in contact with each other. This suppresses diffusion of impurities from the outside to the display unit 162 through the organic insulating film. This is possible. Therefore, the reliability of the display panel 200B can be enhanced.

[0230] FIG. 13B shows an example in which the protective layer 195 has a three-layer structure. In FIG. 13B, the protective layer 19 5 includes an inorganic insulating layer 195a on the common electrode 115, an organic insulating layer 1 95b on the inorganic insulating layer 195a, and an inorganic insulating layer 195c on the organic insulating layer 195b.

[0231] The ends of the inorganic insulating layer 195a and the ends of the inorganic insulating layer 195c extend outside the ends of the organic insulating layer 195b and are in contact with each other. The inorganic insulating layer 195a is in contact with the insulating layer 215 (inorganic insulating layer) through an opening in the insulating layer 214 (organic insulating layer). Thus, the light receiving element 110 and the light emitting element 190 can be surrounded by the insulating layer 215 and the protective layer 195 , so that the reliability of the light receiving element 110 and the light emitting element 190 can be enhanced. (organic insulating layer). Thus, the light receiving element 110 and the light emitting element 190 can be surrounded by the insulating layer 215 and the protective layer 195 , so that the reliability of the light receiving element 110 and the light emitting element 190 can be enhanced.

[0232] As described above, the protective layer 195 may have a laminated structure of an organic insulating film and an inorganic insulating film. At this time, it is preferable that the ends of the inorganic insulating film extend outside the ends of the organic insulating film. .

[0233] A lens 149 is provided on the surface of the substrate 152 on the side of the substrate 151. The lens 149 has a convex surface on the side of the substrate 151. The light receiving area of the light receiving element 110 preferably overlaps with the lens 149 and does not overlap with the light emitting layer 193. Thereby, the sensitivity and accuracy of the sensor using the light receiving element 110 can be enhanced. .

[0234] The lens 149 preferably has a refractive index of 1.3 or more and 2. 5 or less with respect to the wavelength of the light received by the light receiving element 110. The lens 149 is made of at least one of an inorganic material and an organic material. It can be formed using. For example, a material containing a resin can be used for the lens 149. It is also possible to use a material containing at least one of an oxide and a sulfide for the lens 149. That's possible.

[0235] Specifically, a resin containing chlorine, bromine, or iodine, a resin containing heavy metal atoms, a resin containing an aromatic ring, a resin containing sulfur, etc. can be used for the lens 149. Or, a material containing a resin and nanoparticles of a material having a higher refractive index than the resin can be used for the lens 149. That's possible. Titanium oxide or zirconium oxide, etc. can be used for the nanoparticles. That's possible.

[0236] Also, cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, an oxide containing indium and tin, or an oxide containing indium, gallium, and zinc, etc. can be used for the lens 149. Or, zinc sulfide, etc. can be used for the lens 149. That's possible. That's possible.

[0237] Also, in the display panel 200B, the protective layer 195 and the substrate 152 are bonded together by the adhesive layer 142. The adhesive layer 142 is provided so as to overlap with the light receiving element 110 and the light emitting element 190 respectively, and a solid encapsulation structure is applied to the display panel 200B. That's possible. That's possible.

[0238] 〔Configuration Example 2-3〕 FIG. 14A shows a cross-sectional view of the display panel 200C. The display panel 200C is mainly different from the display panel 200B in that the structure of the transistor is different and it does not have the light shielding layer BM and the lens 149. That's possible. That's possible.

[0239] The display panel 200C includes a transistor 208, a transistor 209, and a and a transistor 210.

[0240] The transistors 208, 209, and 210 have gates A conductive layer 221 that functions as a gate insulating layer, an insulating layer 211 that functions as a gate insulating layer, a channel forming region 2 31i and a semiconductor layer having a pair of low resistance regions 231n, A conductive layer 222a connected to one of the pair of low resistance regions 231n, and a conductive layer 222 connected to the other of the pair of low resistance regions 231n. b, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, The insulating layer 211 is formed between the conductive layer 221 and the channel 223. The insulating layer 225 is located between the conductive layer 223 and the channel forming region 231i. It is located between area 231i.

[0241] The conductive layer 222a and the conductive layer 222b are provided on the insulating layer 225 and the insulating layer 215, respectively. The conductive layer 222a and the conductive layer 222b are connected to the low resistance region 231n through the opening. Of 2b, one functions as a source and the other functions as a drain.

[0242] The pixel electrode 191 of the light emitting element 190 is connected to one of the transistors 208 via the conductive layer 222b. It is electrically connected to one of the pair of low resistance regions 231n.

[0243] The pixel electrode 111 of the light receiving element 110 is connected to one of the transistors 209 via the conductive layer 222b. It is electrically connected to the other of the pair of low resistance regions 231n.

[0244] FIG. 14A shows an example in which an insulating layer 225 covers the top and side surfaces of the semiconductor layer. FIG. 14B shows an example of a transistor 202 in which the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 and does not overlap with the low resistance region 231n. For example, the structure shown in FIG. 14B can be fabricated by processing the insulating layer 225 using the conductive layer 223 as a mask. In FIG. 14B, an insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layers 222a and 222b are respectively connected to the low resistance region 231n through the opening of the insulating layer 215. Further, an insulating layer 218 covering the transistor may be provided. 〔Configuration Example 2-4〕 FIG. 15 shows a cross-sectional view of the display panel 200D. The display panel 200D is mainly different from the display panel 200C in that the configuration of the substrate is different. The display panel 200D does not have the substrates 151 and 152, but has a substrate 153, a substrate 154, an adhesive layer 155, and an insulating layer 212. The substrate 153 and the insulating layer 212 are bonded together by the adhesive layer 155. The substrate 154 and the protective layer 195 are bonded together by the adhesive layer 142. The display panel 200D is configured by transferring the insulating layer 212, the transistors 208 and 209, the light receiving element 110, the light emitting element 190, etc., formed on the fabrication substrate, onto the substrate 153. The substrates 153 and 154 preferably have flexibility respectively. Thereby, the flexibility of the display panel 200D can be enhanced.

[0245]

[0246]

[0247]

[0248]

[0249] ​​​​​​​​​​​​The insulating layer 212 can use an inorganic insulating film that can be used for the insulating layer 211, the insulating layer 213, and the insulating layer 215. Alternatively, the insulating layer 212 may be a laminated film of an organic insulating film and an inorganic insulating film. At this time, it is preferable that the film on the transistor 209 side is an inorganic insulating film. The above is the description of the configuration example of the display panel. The above is the description of the configuration example of the display panel. The above is the description of the configuration example of the display panel.

[0250] The above is the description of the configuration example of the display panel.

[0251] [Regarding Metal Oxides] Hereinafter, metal oxides applicable to the semiconductor layer will be described.

[0252] In this specification and the like, metal oxides containing nitrogen may also be collectively referred to as metal oxides. Further, metal oxides containing nitrogen may be referred to as metal oxynitrides. For example, metal oxides containing nitrogen such as zinc oxynitride (ZnON) may be used for the semiconductor layer. In this specification and the like, metal oxides containing nitrogen may also be collectively referred to as metal oxides. Further, metal oxides containing nitrogen may be referred to as metal oxynitrides. For example, metal oxides containing nitrogen such as zinc oxynitride (ZnON) may be used for the semiconductor layer. In this specification and the like, metal oxides containing nitrogen may also be collectively referred to as metal oxides. Further, metal oxides containing nitrogen may be referred to as metal oxynitrides. For example, metal oxides containing nitrogen such as zinc oxynitride (ZnON) may be used for the semiconductor layer. In this specification and the like, metal oxides containing nitrogen may also be collectively referred to as metal oxides. Further, metal oxides containing nitrogen may be referred to as metal oxynitrides. For example, metal oxides containing nitrogen such as zinc oxynitride (ZnON) may be used for the semiconductor layer.

[0253] In this specification and the like, there are cases where CAAC (c-axis aligned crystal) and CAC (Cloud-Aligned Composite) are described. CAAC represents an example of a crystal structure, and CAC represents an example of the configuration of a function or a material. In this specification and the like, there are cases where CAAC (c-axis aligned crystal) and CAC (Cloud-Aligned Composite) are described. CAAC represents an example of a crystal structure, and CAC represents an example of the configuration of a function or a material. In this specification and the like, there are cases where CAAC (c-axis aligned crystal) and CAC (Cloud-Aligned Composite) are described. CAAC represents an example of a crystal structure, and CAC represents an example of the configuration of a function or a material. In this specification and the like, there are cases where CAAC (c-axis aligned crystal) and CAC (Cloud-Aligned Composite) are described. CAAC represents an example of a crystal structure, and CAC represents an example of the configuration of a function or a material.

[0254] For example, CAC (Cloud-Aligned Composite)-OS (Oxide Semiconductor) can be used for the semiconductor layer. For example, CAC (Cloud-Aligned Composite)-OS (Oxide Semiconductor) can be used for the semiconductor layer.

[0255] CAC-OS or CAC-metal oxide has a conductive function in part of the material and an insulating function in part of the material, and has a semiconductor function as a whole. CAC-OS or CAC-metal oxide has a conductive function in part of the material and an insulating function in part of the material, and has a semiconductor function as a whole. This is the case. When CAC-OS or CAC-metal oxide is used in the semiconductor layer of a transistor, the conductive function is the function of allowing electrons (or holes) serving as carriers to flow, and the insulating function is the function of not allowing electrons serving as carriers to flow. By causing the conductive function and the insulating function to act complementarily, respectively, a switching function (On / Off function) can be imparted to CAC-OS or CAC-metal oxide. In CAC-OS or CAC-metal oxide, by separating the respective functions, both functions can be maximally enhanced. This is the case. When CAC-OS or CAC-metal oxide is used in the semiconductor layer of a transistor, the conductive function is the function of allowing electrons (or holes) serving as carriers to flow, and the insulating function is the function of not allowing electrons serving as carriers to flow. By causing the conductive function and the insulating function to act complementarily, respectively, a switching function (On / Off function) can be imparted to CAC-OS or CAC-metal oxide. In CAC-OS or CAC-metal oxide, by separating the respective functions, both functions can be maximally enhanced. This is the case. When CAC-OS or CAC-metal oxide is used in the semiconductor layer of a transistor, the conductive function is the function of allowing electrons (or holes) serving as carriers to flow, and the insulating function is the function of not allowing electrons serving as carriers to flow. By causing the conductive function and the insulating function to act complementarily, respectively, a switching function (On / Off function) can be imparted to CAC-OS or CAC-metal oxide. In CAC-OS or CAC-metal oxide, by separating the respective functions, both functions can be maximally enhanced. This is the case. When CAC-OS or CAC-metal oxide is used in the semiconductor layer of a transistor, the conductive function is the function of allowing electrons (or holes) serving as carriers to flow, and the insulating function is the function of not allowing electrons serving as carriers to flow. By causing the conductive function and the insulating function to act complementarily, respectively, a switching function (On / Off function) can be imparted to CAC-OS or CAC-metal oxide. In CAC-OS or CAC-metal oxide, by separating the respective functions, both functions can be maximally enhanced. This is the case. When CAC-OS or CAC-metal oxide is used in the semiconductor layer of a transistor, the conductive function is the function of allowing electrons (or holes) serving as carriers to flow, and the insulating function is the function of not allowing electrons serving as carriers to flow. By causing the conductive function and the insulating function to act complementarily, respectively, a switching function (On / Off function) can be imparted to CAC-OS or CAC-metal oxide. In CAC-OS or CAC-metal oxide, by separating the respective functions, both functions can be maximally enhanced. This is the case. When CAC-OS or CAC-metal oxide is used in the semiconductor layer of a transistor, the conductive function is the function of allowing electrons (or holes) serving as carriers to flow, and the insulating function is the function of not allowing electrons serving as carriers to flow. By causing the conductive function and the insulating function to act complementarily, respectively, a switching function (On / Off function) can be imparted to CAC-OS or CAC-metal oxide. In CAC-OS or CAC-metal oxide, by separating the respective functions, both functions can be maximally enhanced. This is the case. When CAC-OS or CAC-metal oxide is used in the semiconductor layer of a transistor, the conductive function is the function of allowing electrons (or holes) serving as carriers to flow, and the insulating function is the function of not allowing electrons serving as carriers to flow. By causing the conductive function and the insulating function to act complementarily, respectively, a switching function (On / Off function) can be imparted to CAC-OS or CAC-metal oxide. In CAC-OS or CAC-metal oxide, by separating the respective functions, both functions can be maximally enhanced.

[0256] Also, CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-described conductive function, and the insulating region has the above-described insulating function. Also, in the material, the conductive region and the insulating region may be separated at the nanometer level. Also, the conductive region and the insulating region may be unevenly distributed in the material, respectively. Also, the conductive region may be observed to be blurred at the periphery and connected in a cloud-like manner. Also, CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-described conductive function, and the insulating region has the above-described insulating function. Also, in the material, the conductive region and the insulating region may be separated at the nanometer level. Also, the conductive region and the insulating region may be unevenly distributed in the material, respectively. Also, the conductive region may be observed to be blurred at the periphery and connected in a cloud-like manner. Also, CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-described conductive function, and the insulating region has the above-described insulating function. Also, in the material, the conductive region and the insulating region may be separated at the nanometer level. Also, the conductive region and the insulating region may be unevenly distributed in the material, respectively. Also, the conductive region may be observed to be blurred at the periphery and connected in a cloud-like manner. Also, CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-described conductive function, and the insulating region has the above-described insulating function. Also, in the material, the conductive region and the insulating region may be separated at the nanometer level. Also, the conductive region and the insulating region may be unevenly distributed in the material, respectively. Also, the conductive region may be observed to be blurred at the periphery and connected in a cloud-like manner. Also, CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-described conductive function, and the insulating region has the above-described insulating function. Also, in the material, the conductive region and the insulating region may be separated at the nanometer level. Also, the conductive region and the insulating region may be unevenly distributed in the material, respectively. Also, the conductive region may be observed to be blurred at the periphery and connected in a cloud-like manner. Also, CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-described conductive function, and the insulating region has the above-described insulating function. Also, in the material, the conductive region and the insulating region may be separated at the nanometer level. Also, the conductive region and the insulating region may be unevenly distributed in the material, respectively. Also, the conductive region may be observed to be blurred at the periphery and connected in a cloud-like manner.

[0257] Also, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region may be dispersed in the material with sizes of 0.5 nm or more and 10 nm or less, preferably 0.5 nm or more and 3 nm or less, respectively. Also, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region may be dispersed in the material with sizes of 0.5 nm or more and 10 nm or less, preferably 0.5 nm or more and 3 nm or less, respectively. Also, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region may be dispersed in the material with sizes of 0.5 nm or more and 10 nm or less, preferably 0.5 nm or more and 3 nm or less, respectively.

[0258] Also, CAC-OS or CAC-metal oxide is composed of components having different band gaps. For example, CAC-OS or CAC-metal ox Also, CAC-OS or CAC-metal oxide is composed of components having different band gaps. For example, CAC-OS or CAC-metal ox ide is composed of a component having a wide gap due to an insulating region and a component having a narrow gap. In this configuration, when carriers flow, in the component having a narrow gap, carriers mainly flow. Also, the component having a narrow gap acts complementarily to the component having a wide gap, and carriers also flow in the component having a wide gap in conjunction with the component having a narrow gap. Therefore, when using CAC-OS or CAC-metal oxide in the channel formation region of a transistor, a high current driving force, that is, a large on-current,

[0259] and a high field-effect mobility can be obtained. That is, CAC-OS or CAC-metal oxide can also be referred to as a matrix composite material or a metal matrix composite material.

[0260] Oxide semiconductors (metal oxides) can be divided into single-crystalline oxide semiconductors and other non-single-crystalline oxide semiconductors. Examples of non-single-crystalline oxide semiconductors include CAAC-OS (c- axis aligned crystalline oxide semiconductor), polycrystalline oxide semiconductors, nc-OS (nanocrystalline oxide semiconductor), pseudo- amorphous oxide semiconductors (a-like OS: amorphous-like oxide semiconductor), and non-crystalline oxide semiconductors.

[0261] CAAC-OS has a c-axis orientation and a crystal structure in which a plurality of nanocrystals are connected in the a-b plane direction and have strain. Here, the strain refers to a location where the orientation of the lattice array changes between a region with an aligned lattice array and another region with an aligned lattice array in the region where the plurality of nanocrystals are connected. The nanocrystals are based on a hexagon, but are not necessarily regular hexagons and may be non-regular hexagons. Also, in the strain, there may be cases where the lattice array has pentagons and heptagons, etc. In addition, in CAAC-OS, it is difficult to confirm a clear grain boundary (also called a grain boundary) even in the vicinity of the strain. That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice array. This is because CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the a-b plane direction and the interatomic bond distance changes due to the substitution of metal elements. The nanocrystals are based on a hexagon, but are not necessarily regular hexagons and may be non-regular hexagons. Also, in the strain, there may be cases where the lattice array has pentagons and heptagons, etc. In addition, in CAAC-OS, it is difficult to confirm a clear grain boundary (also called a grain boundary) even in the vicinity of the strain. That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice array. This is because CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the a-b plane direction and the interatomic bond distance changes due to the substitution of metal elements. The nanocrystals are based on a hexagon, but are not necessarily regular hexagons and may be non-regular hexagons. Also, in the strain, there may be cases where the lattice array has pentagons and heptagons, etc. In addition, in CAAC-OS, it is difficult to confirm a clear grain boundary (also called a grain boundary) even in the vicinity of the strain. That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice array. This is because CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the a-b plane direction and the interatomic bond distance changes due to the substitution of metal elements.

[0262] The nanocrystals are based on a hexagon, but are not necessarily regular hexagons and may be non-regular hexagons. Also, in the strain, there may be cases where the lattice array has pentagons and heptagons, etc. In addition, in CAAC-OS, it is difficult to confirm a clear grain boundary (also called a grain boundary) even in the vicinity of the strain. That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice array. This is because CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the a-b plane direction and the interatomic bond distance changes due to the substitution of metal elements. The nanocrystals are based on a hexagon, but are not necessarily regular hexagons and may be non-regular hexagons. Also, in the strain, there may be cases where the lattice array has pentagons and heptagons, etc. In addition, in CAAC-OS, it is difficult to confirm a clear grain boundary (also called a grain boundary) even in the vicinity of the strain. That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice array. This is because CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the a-b plane direction and the interatomic bond distance changes due to the substitution of metal elements. In addition, in CAAC-OS, it is difficult to confirm a clear grain boundary (also called a grain boundary) even in the vicinity of the strain. That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice array. This is because CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the a-b plane direction and the interatomic bond distance changes due to the substitution of metal elements. In addition, in CAAC-OS, it is difficult to confirm a clear grain boundary (also called a grain boundary) even in the vicinity of the strain. That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice array. This is because CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the a-b plane direction and the interatomic bond distance changes due to the substitution of metal elements. In addition, in CAAC-OS, it is difficult to confirm a clear grain boundary (also called a grain boundary) even in the vicinity of the strain. That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice array. This is because CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the a-b plane direction and the interatomic bond distance changes due to the substitution of metal elements. In addition, in CAAC-OS, it is difficult to confirm a clear grain boundary (also called a grain boundary) even in the vicinity of the strain. That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice array. This is because CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the a-b plane direction and the interatomic bond distance changes due to the substitution of metal elements. In addition, in CAAC-OS, it is difficult to confirm a clear grain boundary (also called a grain boundary) even in the vicinity of the strain. That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice array. This is because CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the a-b plane direction and the interatomic bond distance changes due to the substitution of metal elements.

[0263] Also, CAAC-OS tends to have a layered crystal structure (also called a layered structure) in which a layer containing indium and oxygen (hereinafter, In layer) and a layer containing element M, zinc, and oxygen (hereinafter, (M,Zn) layer) are laminated. Here, indium and element M are mutually substitutable. When element M in the (M,Zn) layer is substituted with indium, it can also be expressed as an (In,M,Zn) layer. Also, when indium in the In layer is substituted with element M, it can also be expressed as an (In,M) layer. Also, CAAC-OS tends to have a layered crystal structure (also called a layered structure) in which a layer containing indium and oxygen (hereinafter, In layer) and a layer containing element M, zinc, and oxygen (hereinafter, (M,Zn) layer) are laminated. Here, indium and element M are mutually substitutable. When element M in the (M,Zn) layer is substituted with indium, it can also be expressed as an (In,M,Zn) layer. Also, when indium in the In layer is substituted with element M, it can also be expressed as an (In,M) layer. Also, CAAC-OS tends to have a layered crystal structure (also called a layered structure) in which a layer containing indium and oxygen (hereinafter, In layer) and a layer containing element M, zinc, and oxygen (hereinafter, (M,Zn) layer) are laminated. Here, indium and element M are mutually substitutable. When element M in the (M,Zn) layer is substituted with indium, it can also be expressed as an (In,M,Zn) layer. Also, when indium in the In layer is substituted with element M, it can also be expressed as an (In,M) layer. Also, CAAC-OS tends to have a layered crystal structure (also called a layered structure) in which a layer containing indium and oxygen (hereinafter, In layer) and a layer containing element M, zinc, and oxygen (hereinafter, (M,Zn) layer) are laminated. Here, indium and element M are mutually substitutable. When element M in the (M,Zn) layer is substituted with indium, it can also be expressed as an (In,M,Zn) layer. Also, when indium in the In layer is substituted with element M, it can also be expressed as an (In,M) layer. Also, CAAC-OS tends to have a layered crystal structure (also called a layered structure) in which a layer containing indium and oxygen (hereinafter, In layer) and a layer containing element M, zinc, and oxygen (hereinafter, (M,Zn) layer) are laminated. Here, indium and element M are mutually substitutable. When element M in the (M,Zn) layer is substituted with indium, it can also be expressed as an (In,M,Zn) layer. Also, when indium in the In layer is substituted with element M, it can also be expressed as an (In,M) layer. Also, CAAC-OS tends to have a layered crystal structure (also called a layered structure) in which a layer containing indium and oxygen (hereinafter, In layer) and a layer containing element M, zinc, and oxygen (hereinafter, (M,Zn) layer) are laminated. Here, indium and element M are mutually substitutable. When element M in the (M,Zn) layer is substituted with indium, it can also be expressed as an (In,M,Zn) layer. Also, when indium in the In layer is substituted with element M, it can also be expressed as an (In,M) layer.

[0264] CAAC-OS is a highly crystalline metal oxide. On the other hand, CAAC-OS has no clear crystal Since it is difficult to confirm grain boundaries, it can be said that a decrease in electron mobility due to grain boundaries is unlikely to occur. Also, the crystallinity of metal oxides may decrease due to the incorporation of impurities or the generation of defects. Therefore, CAAC-OS can also be said to be a metal oxide with few impurities and defects (such as oxygen vacancies (also referred to as V:oxygen vacancy).). Therefore, the physical properties of metal oxides having CAAC-OS are stable. For this reason, metal oxides having CAAC-OS are heat-resistant and highly reliable. nc-OS has periodicity in the atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less). Also, nc-OS does not show regularity in the crystal orientation between different nano crystals. Therefore, no orientation is observed in the entire film. Therefore, depending on the analysis method, nc-OS may not be distinguishable from a-like OS or amorphous oxide semiconductors. Incidentally, indium-gallium-zinc oxide (hereinafter referred to as IGZO), which is a kind of metal oxide having indium, gallium, and zinc, may have a stable structure by making it the above-described nano crystal. In particular, since IGZO tends to be difficult to grow crystals in the air, a crystal smaller than a large crystal (here, a crystal of several mm or a crystal of several cm), for example, the above-described nano crystal, may be structurally more stable. O :oxygen v acancy is also called.).) and the like). Therefore, CAAC -OS can also be said to be a metal oxide with few impurities and defects (such as oxygen vacancies (also referred to as V:oxygen vacancy).). Therefore, the physical properties of metal oxides having CAAC-OS are stable. For this reason, metal oxides having CAAC-OS are heat-resistant and highly reliable. Since it is difficult to confirm grain boundaries, it can be said that a decrease in electron mobility due to grain boundaries is unlikely to occur. Also, the crystallinity of metal oxides may decrease due to the incorporation of impurities or the generation of defects. Therefore, CAAC-OS can also be said to be a metal oxide with few impurities and defects (such as oxygen vacancies (also referred to as V:oxygen vacancy).). Therefore, the physical properties of metal oxides having CAAC-OS are stable. For this reason, metal oxides having CAAC-OS are heat-resistant and highly reliable.

[0265] nc-OS has periodicity in the atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less). Also, nc-OS does not show regularity in the crystal orientation between different nano crystals. Therefore, no orientation is observed in the entire film. Therefore, depending on the analysis method, nc-OS may not be distinguishable from a-like OS or amorphous oxide semiconductors. nc-OS has periodicity in the atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less). Also, nc-OS does not show regularity in the crystal orientation between different nano crystals. Therefore, no orientation is observed in the entire film. Therefore, depending on the analysis method, nc-OS may not be distinguishable from a-like OS or amorphous oxide semiconductors. nc-OS has periodicity in the atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less). Also, nc-OS does not show regularity in the crystal orientation between different nano crystals. Therefore, no orientation is observed in the entire film. Therefore, depending on the analysis method, nc-OS may not be distinguishable from a-like OS or amorphous oxide semiconductors. nc-OS has periodicity in the atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less). Also, nc-OS does not show regularity in the crystal orientation between different nano crystals. Therefore, no orientation is observed in the entire film. Therefore, depending on the analysis method, nc-OS may not be distinguishable from a-like OS or amorphous oxide semiconductors. nc-OS has periodicity in the atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less). Also, nc-OS does not show regularity in the crystal orientation between different nano crystals. Therefore, no orientation is observed in the entire film. Therefore, depending on the analysis method, nc-OS may not be distinguishable from a-like OS or amorphous oxide semiconductors.

[0266] Incidentally, indium-gallium-zinc oxide (hereinafter referred to as IGZO), which is a kind of metal oxide having indium, gallium, and zinc, may have a stable structure by making it the above-described nano crystal. In particular, since IGZO tends to be difficult to grow crystals in the air, a crystal smaller than a large crystal (here, a crystal of several mm or a crystal of several cm), for example, the above-described nano crystal, may be structurally more stable. Incidentally, indium-gallium-zinc oxide (hereinafter referred to as IGZO), which is a kind of metal oxide having indium, gallium, and zinc, may have a stable structure by making it the above-described nano crystal. In particular, since IGZO tends to be difficult to grow crystals in the air, a crystal smaller than a large crystal (here, a crystal of several mm or a crystal of several cm), for example, the above-described nano crystal, may be structurally more stable. Incidentally, indium-gallium-zinc oxide (hereinafter referred to as IGZO), which is a kind of metal oxide having indium, gallium, and zinc, may have a stable structure by making it the above-described nano crystal. In particular, since IGZO tends to be difficult to grow crystals in the air, a crystal smaller than a large crystal (here, a crystal of several mm or a crystal of several cm), for example, the above-described nano crystal, may be structurally more stable. Incidentally, indium-gallium-zinc oxide (hereinafter referred to as IGZO), which is a kind of metal oxide having indium, gallium, and zinc, may have a stable structure by making it the above-described nano crystal. In particular, since IGZO tends to be difficult to grow crystals in the air, a crystal smaller than a large crystal (here, a crystal of several mm or a crystal of several cm), for example, the above-described nano crystal, may be structurally more stable. Incidentally, indium-gallium-zinc oxide (hereinafter referred to as IGZO), which is a kind of metal oxide having indium, gallium, and zinc, may have a stable structure by making it the above-described nano crystal. In particular, since IGZO tends to be difficult to grow crystals in the air, a crystal smaller than a large crystal (here, a crystal of several mm or a crystal of several cm), for example, the above-described nano crystal, may be structurally more stable.

[0267] a-like OS is a metal oxide having a structure between nc-OS and an amorphous oxide semiconductor. a-like OS has a loose or low-density region. That is, a-li a-like OS is a metal oxide having a structure between nc-OS and an amorphous oxide semiconductor. a-like OS has a loose or low-density region. That is, a-li The ke OS has lower crystallinity compared to nc-OS and CAAC-OS.

[0268] Oxide semiconductors (metal oxides) have diverse structures and each has different properties. The oxide semiconductor according to one embodiment of the present invention may contain two or more of amorphous oxide semiconductor, polycrystalline oxide semiconductor, and a-li Among ke OS, nc-OS, and CAAC-OS, two or more kinds may be included.

[0269] The metal oxide film that functions as a semiconductor layer can be formed using either one or both of an inert gas and an oxygen gas. Note that there is no particular limitation on the flow rate ratio (oxygen partial pressure) of oxygen during the formation of the metal oxide film. However, when obtaining a transistor with high field-effect mobility, the flow rate ratio (oxygen partial pressure) of oxygen during the formation of the metal oxide film is preferably 0% or more and 30% or less, more preferably 5% or more and 30% or less, and even more preferably 7% or more and 15% or less.

[0270] The metal oxide preferably has an energy gap of 2 eV or more, more preferably 2.5 eV or more, and even more preferably 3 eV or more. By using a metal oxide with a wide energy gap in this way, the off-current of the transistor can be reduced.

[0271] The substrate temperature during the formation of the metal oxide film is preferably 350 °C or lower, more preferably room temperature or higher and 200 °C or lower, and even more preferably room temperature or higher and 130 °C or lower. When the substrate temperature during the formation of the metal oxide film is room temperature, productivity can be increased, which is preferable.

[0272] The metal oxide film can be formed by a sputtering method. In addition, for example, P Methods such as the LD method, PECVD method, thermal CVD method, ALD method, and vacuum evaporation method may be used.

[0273] The above is the description of the metal oxide.

[0274] This embodiment can be implemented in appropriate combination with at least a part of other embodiments described in this specification. and implemented in combination.

[0275] (Embodiment 3) In this embodiment, a display panel applicable to a system of an aspect of the present invention will be described with reference to FIGS. 16A and 16B. and FIGS. 16B.

[0276] A display panel according to an aspect of the present invention includes a first pixel circuit having a light receiving element and a second pixel circuit having a light emitting element. The first pixel circuit and the second pixel circuit are each arranged in a matrix. and the second pixel circuit are each arranged in a matrix. form.

[0277] FIG. 16A shows an example of the first pixel circuit having a light receiving element, and FIG. 16B shows an example of the second pixel circuit having a light emitting element. element.

[0278] The pixel circuit PIX1 shown in FIG. 16A includes a light receiving element PD, transistors M1, M2, M3, M4, and a capacitive element C1. Here, an example using a photodiode as the light receiving element PD is shown. transistors M2, M3, M4, and a capacitive element C1. Here, an example using a photodiode as the light receiving element PD is shown. receiving element PD is shown.

[0279] The cathode of the light receiving element PD is electrically connected to the wiring V1, and the anode is electrically connected to one of the source or drain of the transistor M1. The gate of the transistor M1 is electrically connected to the wiring TX, and the other of the source or drain is one electrode of the capacitive element C1. is electrically connected to one of the source or drain of the transistor M1. The gate of the transistor M1 is electrically connected to the wiring TX, and the other of the source or drain is one electrode of the capacitive element C1. is electrically connected to the wiring TX, and the other of the source or drain is one electrode of the capacitive element C1, and the One of the source or drain of transistor M2 and the gate of transistor M3 are electrically connected. The gate of transistor M2 is electrically connected to wiring RES, and the other of the source or drain is electrically connected to wiring V2. One of the source or drain of transistor M3 is electrically connected to wiring V3, and the other of the source or drain is electrically connected to one of the source or drain of transistor M4. The gate of transistor M4 is electrically connected to wiring SE, and the other of the source or drain is electrically connected to wiring OUT1.

[0280] A fixed potential is supplied to wiring V1, wiring V2, and wiring V3, respectively. When the light receiving element PD is driven in reverse bias, a potential lower than the potential of wiring V1 is supplied to wiring V2. Transistor M2 is controlled by the signal supplied to wiring RES, and has a function of resetting the potential of the node connected to the gate of transistor M3 to the potential supplied to wiring V2. Transistor M1 is controlled by the signal supplied to wiring TX, and has a function of controlling the timing at which the potential of the above node changes according to the current flowing through the light receiving element PD. Transistor M3 functions as an amplifying transistor that outputs according to the potential of the above node. Transistor M4 is controlled by the signal supplied to wiring SE, and functions as a

[0281] selection transistor for reading out the output according to the potential of the above node to an external circuit connected to wiring OUT1. An example using a light-emitting diode is shown. In particular, as the light-emitting element EL, it is preferable to use an organic EL element. It is preferred to use it.

[0282] The transistor M5 has its gate electrically connected to the wiring VG, one of the source or drain electrically connected to the wiring VS, and the other of the source or drain electrically connected to one electrode of the capacitor element C2 and the gate of the transistor M6. One of the source or drain of the transistor M6 is electrically connected to the wiring V4, and the other is electrically connected to the anode of the light-emitting element EL and one of the source or drain of the transistor M7. The transistor M7 has its gate electrically connected to the wiring MS and the other of the source or drain electrically connected to the wiring OUT2. The cathode of the light-emitting element EL is electrically connected to the wiring V5. One of the source or drain of the transistor M6 is electrically connected to the wiring V4, and the other is electrically connected to the anode of the light-emitting element EL and one of the source or drain of the transistor M7. One of the source or drain of the transistor M6 is electrically connected to the wiring V4, and the other is electrically connected to the anode of the light-emitting element EL and one of the source or drain of the transistor M7. One of the source or drain of the transistor M6 is electrically connected to the wiring V4, and the other is electrically connected to the anode of the light-emitting element EL and one of the source or drain of the transistor M7. One of the source or drain of the transistor M6 is electrically connected to the wiring V4, and the other is electrically connected to the anode of the light-emitting element EL and one of the source or drain of the transistor M7. The transistor M7 has its gate electrically connected to the wiring MS and the other of the source or drain electrically connected to the wiring OUT2. The cathode of the light-emitting element EL is electrically connected to the wiring V5.

[0283] A fixed potential is supplied to each of the wiring V4 and the wiring V5. The anode side of the light-emitting element EL can be set to a high potential and the cathode side to a lower potential than the anode side. The transistor M5 is controlled by the signal supplied to the wiring VG and functions as a selection transistor for controlling the selection state of the pixel circuit PIX2. Also, the transistor M6 functions as a drive transistor for controlling the current flowing through the light-emitting element EL according to the potential supplied to its gate. When the transistor M5 is in the conductive state, the potential supplied to the wiring VS is supplied to the gate of the transistor M6, and the emission luminance of the light-emitting element EL can be controlled according to that potential. The anode side of the light-emitting element EL can be set to a high potential and the cathode side to a lower potential than the anode side. The transistor M5 is controlled by the signal supplied to the wiring VG and functions as a selection transistor for controlling the selection state of the pixel circuit PIX2. The transistor M5 is controlled by the signal supplied to the wiring VG and functions as a selection transistor for controlling the selection state of the pixel circuit PIX2. The transistor M6 functions as a drive transistor for controlling the current flowing through the light-emitting element EL according to the potential supplied to its gate. When the transistor M5 is in the conductive state, the potential supplied to the wiring VS is supplied to the gate of the transistor M6, and the emission luminance of the light-emitting element EL can be controlled according to that potential. When the transistor M5 is in the conductive state, the potential supplied to the wiring VS is supplied to the gate of the transistor M6, and the emission luminance of the light-emitting element EL can be controlled according to that potential. The transistor M7 is controlled by the signal supplied to the wiring MS and has a function of outputting the potential between the transistor M6 and the light-emitting element EL to the outside via the wiring OUT2. The transistor M7 is controlled by the signal supplied to the wiring MS and has a function of outputting the potential between the transistor M6 and the light-emitting element EL to the outside via the wiring OUT2.

[0284] In the display panel of the present embodiment, an image may be displayed by causing the light-emitting element to emit light in a pulsed manner. By shortening the driving time of the light-emitting element, it is possible to reduce the power consumption of the display panel and suppress heat generation. In particular, an organic EL element is suitable because of its excellent frequency characteristics. The frequency can be, for example, 1 kHz or more and 100 MHz or less. By shortening the driving time of the light-emitting element, it is possible to reduce the power consumption of the display panel and suppress heat generation. In particular, an organic EL element is suitable because of its excellent frequency characteristics. Therefore, it is suitable. The frequency can be, for example, 1 kHz or more and 100 MHz or less.

[0285] Here, for the transistors M1, M2, M3, and M4 included in the pixel circuit PIX1, and the transistors M5, M6, and M7 included in the pixel circuit PIX2, it is preferable to apply transistors using a metal oxide (oxide semiconductor) for the semiconductor layer in which channels are formed. For the transistors M1, M2, M3, and M4 included in the pixel circuit PIX1, and the transistors M5, M6, and M7 included in the pixel circuit PIX2, it is preferable to apply transistors using a metal oxide (oxide semiconductor) for the semiconductor layer in which channels are formed.

[0286] A transistor using a metal oxide having a wider bandgap and a smaller carrier density than silicon can achieve an extremely small off-current. Therefore, due to the small off-current, it is possible to hold the charges accumulated in the capacitive element connected in series with the transistor for a long period of time. Therefore, in particular, for the transistors M1, M2, and M5 connected in series to the capacitive element C1 or the capacitive element C2, it is preferable to use transistors to which an oxide semiconductor is applied. Also, by using transistors to which an oxide semiconductor is applied for other transistors as well, the manufacturing cost can be reduced. A transistor using a metal oxide having a wider bandgap and a smaller carrier density than silicon can achieve an extremely small off-current. Therefore, due to the small off-current, it is possible to hold the charges accumulated in the capacitive element connected in series with the transistor for a long period of time. Therefore, in particular, for the transistors M1, M2, and M5 connected in series to the capacitive element C1 or the capacitive element C2, it is preferable to use transistors to which an oxide semiconductor is applied. Also, by using transistors to which an oxide semiconductor is applied for other transistors as well, the manufacturing cost can be reduced. A transistor using a metal oxide having a wider bandgap and a smaller carrier density than silicon can achieve an extremely small off-current. Therefore, due to the small off-current, it is possible to hold the charges accumulated in the capacitive element connected in series with the transistor for a long period of time. Therefore, in particular, for the transistors M1, M2, and M5 connected in series to the capacitive element C1 or the capacitive element C2, it is preferable to use transistors to which an oxide semiconductor is applied. Also, by using transistors to which an oxide semiconductor is applied for other transistors as well, the manufacturing cost can be reduced. A transistor using a metal oxide having a wider bandgap and a smaller carrier density than silicon can achieve an extremely small off-current. Therefore, due to the small off-current, it is possible to hold the charges accumulated in the capacitive element connected in series with the transistor for a long period of time. Therefore, in particular, for the transistors M1, M2, and M5 connected in series to the capacitive element C1 or the capacitive element C2, it is preferable to use transistors to which an oxide semiconductor is applied. Also, by using transistors to which an oxide semiconductor is applied for other transistors as well, the manufacturing cost can be reduced. A transistor using a metal oxide having a wider bandgap and a smaller carrier density than silicon can achieve an extremely small off-current. Therefore, due to the small off-current, it is possible to hold the charges accumulated in the capacitive element connected in series with the transistor for a long period of time. Therefore, in particular, for the transistors M1, M2, and M5 connected in series to the capacitive element C1 or the capacitive element C2, it is preferable to use transistors to which an oxide semiconductor is applied. Also, by using transistors to which an oxide semiconductor is applied for other transistors as well, the manufacturing cost can be reduced. A transistor using a metal oxide having a wider bandgap and a smaller carrier density than silicon can achieve an extremely small off-current. Therefore, due to the small off-current, it is possible to hold the charges accumulated in the capacitive element connected in series with the transistor for a long period of time. Therefore, in particular, for the transistors M1, M2, and M5 connected in series to the capacitive element C1 or the capacitive element C2, it is preferable to use transistors to which an oxide semiconductor is applied. Also, by using transistors to which an oxide semiconductor is applied for other transistors as well, the manufacturing cost can be reduced. A transistor using a metal oxide having a wider bandgap and a smaller carrier density than silicon can achieve an extremely small off-current. Therefore, due to the small off-current, it is possible to hold the charges accumulated in the capacitive element connected in series with the transistor for a long period of time. Therefore, in particular, for the transistors M1, M2, and M5 connected in series to the capacitive element C1 or the capacitive element C2, it is preferable to use transistors to which an oxide semiconductor is applied. Also, by using transistors to which an oxide semiconductor is applied for other transistors as well, the manufacturing cost can be reduced.

[0287] Also, transistors using silicon for the semiconductor in which channels are formed can be used for the transistors M1 to M7. In particular, single-crystalline silicon or polycrystalline silicon ​​​ By using highly crystalline silicon such as that, high field - effect mobility can be achieved, which is preferable because faster operation becomes possible.

[0288] Also, among transistors M1 to M7, a configuration may be adopted in which one or more transistors using an oxide semiconductor are used, and the other transistors using silicon are used. This is also acceptable.

[0289] In FIGS. 16A and 16B, although the transistors are shown as n - channel type transistors, p - channel type transistors can also be used.

[0290] The transistors included in pixel circuit PIX1 and the transistors included in pixel circuit PIX2 are preferably formed side by side on the same substrate. In particular, it is preferable to mix the transistors included in pixel circuit PIX1 and the transistors included in pixel circuit PIX2 in one region and arrange them periodically.

[0291] Also, it is preferable to provide one or more layers having one or both of a transistor and a capacitor element at a position overlapping the light - receiving element PD or the light - emitting element EL. Thereby, the effective occupied area of each pixel circuit can be reduced, and a high - definition

[0292] light - receiving part or display part can be realized. This embodiment can be implemented in appropriate combination with at least a part of other embodiments described in this specification.

[0293] 10: Display system, 11: Display device, 12, 12a, 12b: Light - emitting device, 15, 15a , 15b: Light receiving module, 16: Control device, 20: Display panel, 21: Display unit, 22: Pixel, 23, 23G, 23R, 23B: Display elements, 24: Light receiving element, 25, 26: Driving circuit Path, 30: Light receiving unit, 31: Light receiving element, 41: Control unit, 42, 42a, 42b, 43, 43 a, 43b: Driving units, 51, 52: Switches, 53, 54: Light emitting elements, 55, 57: Driving Units, 56: Signal generation unit, 58, 59, 59a, 59b: Irradiation areas, 60, 60a, 60b : User, 61, 62, 63, 64, 66a, 66b, 67a, 67b, 68: Object Kut, 65: Trajectory, 69a, 69b, 69c, 69d: Icons

Claims

【Claim 1】 A display system having a display device and a light-emitting device, wherein the light-emitting device has means for emitting visible light and means for emitting invisible light, the display device has a display unit having means for displaying an image and means for acquiring position information of a portion irradiated with the visible light, and means for receiving the invisible light, display system.

Images