Display device

Abstract

To provide a display device which exhibits light with high color purity, and with low power consumption.SOLUTION: A display device includes: a first pixel electrode; a second pixel electrode; a light-emitting layer; a common electrode; a first protective layer; and a semi-transmissive layer. The light-emitting layer includes: a first region located over the first pixel electrode; and a second region located over the second pixel electrode. The common electrode is located on the light emitting layer. The first protective layer is located on the common electrode. The semi-transmissive layer is located on the first protective layer. The reflectivity of the semi-transmissive layer with respect to visible light is higher than the reflectivity of the common electrode with respect to visible light. The semi-transmissive layer does not overlap with the first region and overlaps with the second region. For example, the semi-transmissive layer may have an opening at a position overlapping the first region.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] One aspect of the present invention relates to a display device, a display module, and an electronic device.

[0002] Note that one aspect of the present invention is not limited to the above technical field. The technical field of one aspect of the present invention includes, for example, semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), their driving methods, or their manufacturing methods as an example.

Background Art

[0003] In recent years, display devices are expected to be applied to various uses. For example, the uses of large display devices include home television devices (also referred to as TVs or television receivers), digital signage, PID (Public c Information Display), etc. The larger the display area of the display device, the more information can be provided at once. Also, the larger the display area, the easier it is to catch people's eyes, and for example, it is expected to enhance the advertising effect. As display devices, for example, light-emitting devices having light-emitting elements have been developed. Electroluminescent

[0004] (Electroluminescence, hereinafter referred to as EL) elements, which utilize the EL phenomenon, are easy to make thin and lightweight, can respond quickly to input signals, and can be driven using a DC low-voltage power supply, and are applied to display devices.

[0005] ​​In addition, the application of organic EL elements to flexible devices is being considered. For example, Document 1 discloses a flexible light-emitting device to which an organic EL element is applied. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2014-197522 A Summary of the Invention [Problem to be solved by the invention]

[0007] A side-by-side method (also called a color-separate method) in which a different light-emitting layer is deposited on each sub-pixel of each color When manufacturing a full-color display device using a metal mask, High accuracy in arranging the mouth at the desired position (also called alignment accuracy) is required. ,High-definition display devices have high pixel density and require extremely high ,alignment accuracy. There is a problem that the yield in manufacturing the display device decreases and the manufacturing cost increases. The film may be formed in a wider area than the desired area due to bending of the metal mask. However, the side-by-side method has the problem that it is difficult to adopt it on large boards.

[0008] On the other hand, a color filter method that combines a white light emitting element with a color filter is used. In manufacturing a display device capable of full color display, each color subpixel is provided with a different light emitting element. This eliminates the need for a process for depositing layers, making it possible to manufacture high-definition and large-sized displays with high productivity. On the other hand, since a common light-emitting layer is formed for each sub-pixel, The light emitted by the pixel includes not only the light of the desired color but also the light of other colors. Therefore, the color -filter method has problems such as being likely to have lower color purity of light and poor light utilization efficiency compared to the side-by-side method.

[0009] One aspect of the present invention aims to provide a display device that exhibits light with high color purity. One aspect of the present invention aims to provide a display device with high display quality. One aspect of the present invention aims to provide a display device with high luminous efficiency. One aspect of the present invention aims to provide a display device with low power consumption. One aspect of the present invention aims to provide a display device that can be manufactured with a high yield. One aspect of the present invention aims to provide a display device with high definition. One aspect of the present invention aims to provide a display device with a long lifespan. One aspect of the present invention aims to provide a large-sized display device.

[0010] Note that the description of these problems does not prevent the existence of other problems. One aspect of the present invention is not necessarily required to solve all of these problems. It is possible to extract other problems from the description of the specification, drawings, and claims .

Means for Solving the Problems

[0011] The display device according to one aspect of the present invention includes a first pixel electrode, a second pixel electrode, a light-emitting layer, a common electrode, a first protection layer, and a semi-transmissive layer. The light-emitting layer has a first region located on the first pixel electrode and a second region located on the second pixel electrode. The common electrode is located on the light-emitting layer. The first protection layer is located on the common electrode. The semi-transmissive layer is located on the first protection layer . The reflectivity of the semi-transmissive layer with respect to visible light is higher than that of the common electrode with respect to visible light. Semi- The transmissive layer does not overlap with the first region, and the semi-transmissive layer overlaps with the second region. For example, the semi-transmissive layer may have an opening at a position overlapping with the first region.

[0012] The display device according to one aspect of the present invention may further include a second protective layer. The second protective layer is in contact with the first protective layer in a region overlapping with the first region, and is in contact with the semi-transmissive layer in a region overlapping with the second region.

[0013] Alternatively, the display device according to one aspect of the present invention may further include a conductive layer that transmits visible light and a second protective layer. The conductive layer that transmits visible light is located on the common electrode. The second protective layer is located on the conductive layer that transmits visible light. The conductive layer that transmits visible light has a region in contact with the common electrode, a region in contact with the semi-transmissive layer, a region located between the first protective layer and the second protective layer, and a region located between the first protective layer and the semi-transmissive layer. region, and a region located between the first protective layer and the semi-transmissive layer.

[0014] The display device according to one aspect of the present invention may further include a first optical adjustment layer and a second optical adjustment layer. The first optical adjustment layer is located between the first pixel electrode and the light-emitting layer. The second optical adjustment layer is located between the second pixel electrode and the light-emitting layer. The first pixel electrode and the second pixel electrode each have reflectivity with respect to visible light.

[0015] Alternatively, the display device according to one aspect of the present invention may further include a first reflective layer, a second reflective layer, a first optical adjustment layer, and a second optical adjustment layer. The first optical adjustment layer is located on the first reflective layer. The second optical adjustment layer is located on the second reflective layer. The first pixel electrode is,​ It is located on the first optical adjustment layer. The second pixel electrode is located on the second optical adjustment layer. The first pixel electrode and the second pixel electrode each have transparency to visible light.

[0016] The display device according to one aspect of the present invention may further include a coloring layer. The coloring layer is located on the first protective layer and overlaps with the second region.

[0017] The display device according to one aspect of the present invention may further include a third pixel electrode. The light-emitting layer further has a third region located on the third pixel electrode. The semi-transmissive layer has a fourth region that overlaps with the second region and a fifth region that overlaps with the third region. The thickness of the fourth region is different from the thickness of the fifth region.

[0018] The display device according to one aspect of the present invention may further include a transistor, an insulating layer, a first conductive layer, and a second conductive layer. The first conductive layer and the second conductive layer each have the same material as the electrodes of the transistor. The transistor is electrically connected to the first pixel electrode through a first opening in the insulating layer. The common electrode is electrically connected to the first conductive layer through a second opening in the insulating layer. The semi-transmissive layer is electrically connected to the second conductive layer through a third opening in the insulating layer. The third opening is located outside the display device compared to the second opening .

[0019] One aspect of the present invention has a display device having any of the above configurations, and a flexible printed circuit board (Flexible printed circuit, hereinafter referred to as FPC) or a connector such as TCP (Tape Carrier Package) is attached A module, or a module such as one in which an integrated circuit (IC) is mounted by a COG (Chip On Glass) method, a COF (Chip On Film) method, or the like. It is a module such as a module in which an integrated circuit (IC) is mounted by a method such as COG (Chip On Glass) or COF (Chip On Film). It is a module.

[0020] One aspect of the present invention is an electronic device having the above-described module and at least one of an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operation button.

Advantages of the Invention

[0021] According to one aspect of the present invention, a display device that exhibits light with high color purity can be provided. According to one aspect of the present invention, a display device with high display quality can be provided. According to one aspect of the present invention, a display device with high luminous efficiency can be provided. According to one aspect of the present invention, a display device with low power consumption can be provided. According to one aspect of the present invention, a display device that can be manufactured with high yield can be provided. According to one aspect of the present invention, a display device with high fineness can be provided. According to one aspect of the present invention, a display device with a long lifespan can be provided. According to one aspect of the present invention, a large-sized display device can be provided.

[0022] Note that the description of these effects does not prevent the existence of other effects. One aspect of the present invention does not necessarily have to have all of these effects. From the descriptions in the specification, drawings, and claims, it is possible to extract other effects.

Brief Description of the Drawings

[0023]

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DETAILED DESCRIPTION OF THE INVENTION

[0024] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and those skilled in the art can easily understand that the form and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments shown below. In the configuration of the invention described below, the same parts or parts having the same functions are commonly used with the same reference numerals among different drawings, and the repeated description thereof will be omitted. In addition, when referring to the same function, the hatch pattern may be the same, and in some cases, no reference numeral may be attached.

[0025]

[0026]

[0026] In addition, the positions, sizes, ranges, etc. of the respective components shown in the drawings may not represent the actual positions, sizes, ranges, etc. for the sake of simplicity of understanding. For this reason, the disclosed invention is not necessarily limited to the positions, sizes, ranges, etc. disclosed in the drawings.

[0027] Note that the terms "film" and "layer" can be interchanged with each other depending on the case or the situation. For example, the term "conductive layer" can be replaced with "conductive film". ​It is possible to change it to the term "". Or, for example, it is possible to change the term "insulating film" to the term " insulating layer".

[0028] (Embodiment 1) In this embodiment, a display device according to one aspect of the present invention will be described with reference to FIGS. 1 to 13.

[0029] A display device according to one aspect of the present invention is a color -filter type display device that combines a white light-emitting element and a color filter. Therefore, it is easy to increase the size and definition of the display device. In addition, the display device can be manufactured with a high yield.

[0030] A display device according to one aspect of the present invention has both a light-emitting element to which a microcavity structure is applied and a light-emitting element to which a microcavity structure is not applied. The light-emitting element to which the microcavity structure is applied can emit light with high color purity. The light-emitting element to which the microcavity structure is not applied can emit light with high efficiency. For example, sub-pixels that exhibit light such as red, green, or blue preferably each have a light-emitting element to which a microcavity structure is applied. In addition, the sub-pixel that exhibits white light preferably has a light-emitting element to which a microcavity structure is not applied. Thereby, it is possible to increase the light extraction efficiency of both light with high color purity and white light. Therefore,

[0031] a display device with high display quality and low power consumption can be realized.

[0031] A display device according to one aspect of the present invention has a top emission structure. A display device with a top emission structure has transistors, capacitive elements, wiring, etc. in the light-emitting region of the light-emitting element. Since it can be arranged overlapping with the region, a display device having a bottom emission structure Compared with [a display device], the aperture ratio of the pixel can be increased, and the lifespan of the display device can be extended, which is preferable.

[0032] [Outline of the display device] Fig. 1(A) shows a display device having a light-emitting element 110W and a light-emitting element 110a.

[0033] The light-emitting element 110W includes a pixel electrode 111 on a substrate 101, an optical adjustment layer 1 12W on the pixel electrode 111, an EL layer 113 on the optical adjustment layer 112W, and a common electrode 114 on the EL layer 113 and has them.

[0034] The light-emitting element 110a includes a pixel electrode 111 on a substrate 101, an optical adjustment layer 1 12a on the pixel electrode 111, an EL layer 113 on the optical adjustment layer 112a, and a common electrode 114 on the EL layer 113 and has them.

[0035] Of the pixel electrode 111 and the common electrode 114, one functions as an anode and the other functions as a cathode. When a voltage higher than the threshold voltage of the light-emitting element is applied between the pixel electrode 111 and the common electrode 114 holes are injected into the EL layer 113 from the anode side and electrons are injected from the cathode side . The injected electrons and holes recombine in the EL layer 113, and a light-emitting substance contained in the EL layer 113 emits light.

[0036] The optical adjustment layer 112W and the optical adjustment layer 112a have conductivity. The ends of the pixel electrode 111, the ends of the optical adjustment layer 112W, and the ends of the optical adjustment layer 112a are each covered by an insulating layer 10 4. The insulating layer 104 has an opening in a portion overlapping the pixel electrode 111 . The EL layer 113 has at least a light-emitting layer. The EL layer 113 and the common electrode 114 are each It is provided across a plurality of light-emitting elements.

[0037] The light-emitting element 110a and the light-emitting element 110W are covered by a protective layer 115.

[0038] The light-emitting element 110a overlaps with a semi-transmissive layer 116 (also referred to as a semi-transmissive / semi-reflective layer) via the protective layer 115. The semi-transmissive layer 116 does not overlap with the light-emitting region of the light-emitting element 110W (corresponding to the region overlapping the pixel electrode 111 and the optical adjustment layer 112W in the EL layer 113), and overlaps with the light-emitting region of the light-emitting element 110a (corresponding to the region overlapping the pixel electrode 111 and the optical adjustment layer 112a in the EL layer 113).

[0039] Incidentally, the semi-transmissive layer 116 can also be regarded as a component of the light-emitting element 110a. That is, it can be said that the light-emitting element 110a has the pixel electrode 111 and the semi-transmissive layer 116. Also, it can be said that the light-emitting element 110a has a microcavity structure. Also, it can be said that the light-emitting element 110W does not have a microcavity structure.

[0040] A microcavity structure is applied to the light-emitting element 110a. By resonating the light emitted from the light-emitting layer between the pixel electrode 111 and the semi-transmissive layer 116, the light transmitted through the semi-transmissive layer 116 and emitted can be enhanced. By adjusting the optical distance between the pixel electrode 111 and the semi-transmissive layer 116, the light extraction efficiency for light of a desired wavelength can be increased. The light emitted from the light-emitting element 110a has the intensity of light of a specific wavelength enhanced, and becomes, for example, light of purple, blue, cyan, green, yellow-green, yellow, yellow-orange, orange, or red. Since the intensity of light of a desired wavelength is increased, light with high color purity can be obtained from the light-emitting element 110a. ​​​​​​​​​

[0041] On the other hand, a microcavity structure is not applied to the light-emitting element 110W. The light emitted by the light-emitting layer is extracted to the outside without the intensity of light of a specific wavelength being enhanced by the semi-transmissive layer 116. Therefore, the light-emitting element 110W can efficiently extract white light to the outside. By using the light-emitting element 110W for a sub-pixel that exhibits white light, the power consumption of the display device can be reduced.

[0042] A display device having the light-emitting element 110a to which a microcavity structure is applied and the light-emitting element 110W to which a microcavity structure is not applied has high light extraction efficiency for both light with high color purity and white light. Therefore, a display device with high display quality and low power consumption can be realized.

[0043] The optical distance between the pixel electrode 111 and the semi-transmissive layer 116 is preferably adjusted to be mλ / 2 (m is a natural number) or in the vicinity thereof with respect to the wavelength λ of the light for which the intensity is to be enhanced.

[0044] The reflectivity of the pixel electrode 111 with respect to visible light is higher than that of the common electrode 114 with respect to visible light. The pixel electrode 111 can also be said to be a reflective electrode. The common electrode 114 can also be said to be a transparent electrode. The reflectivity of the semi-transmissive layer 116 with respect to visible light is preferably higher than that of the common electrode 114 with respect to visible light and lower than that of the pixel electrode 111 with respect to visible light.

[0045] For example, the reflectivity of the pixel electrode 111 with respect to visible light is 40% or more and 100% or less, preferably 70% or more and 100% or less. Also, for example, the reflectivity of the semi-transmissive layer 116 with respect to visible light is 20% It is 80% or less, preferably 40% or more and 70% or less. Also, for example, common electrode 11 The transmittance of visible light of 4 is 40% or more. Specifically, the average value of the reflectance or transmittance of light with a wavelength of 400 nm or more and 700 nm or less is preferably within the above range. Or, the reflectance or transmittance of light with a predetermined wavelength of 400 nm or more and 700 nm or less is within the above range is preferable.

[0046] By controlling the film thickness of the optical adjustment layer 112a, the optical distance can be adjusted.

[0047] A conductive film (transparent conductive film) that transmits visible light can be used for the optical adjustment layer 112a .

[0048] The optical adjustment layer 112a is preferably formed using an exposure technique using a multi-tone mask (halftone mask, graytone mask, etc.). Thereby, the manufacturing cost of the light-emitting element can be reduced, and the manufacturing process can be simplified.

[0049] Also, from the viewpoint of equalizing the carrier injection property and carrier transport property from the pixel electrode 111 to the EL layer 113 in a plurality of light-emitting elements, the light-emitting element 110W may have an optical adjustment layer (optical adjustment layer 112W) between the pixel electrode 111 and the EL layer 1 13. The light-emitting element 110 W may not have the optical adjustment layer 112W.

[0050] The display device shown in FIG. 1(B) has a light-emitting element 110b in addition to the light-emitting element 110W and the light-emitting element 110a.

[0051] The light-emitting element 110b includes a pixel electrode 111 on a substrate 101 and an optical adjustment layer 1 on the pixel electrode 111 ​​​12b, the EL layer 113 on the optical adjustment layer 112b, and the common electrode 114 on the EL layer 113 have.

[0052] Each light-emitting element is covered by a protective layer 115.

[0053] The light-emitting element 110a and the light-emitting element 110b overlap with the semi-transmissive layer 116a through the protective layer 115 and. The light-emitting element 110b further overlaps with the semi-transmissive layer 116b through the protective layer 115 and the semi-transmissive layer 116a and.

[0054] Note that the semi-transmissive layer 116a and the semi-transmissive layer 116b can also be regarded as components of the light-emitting element 110b respectively. That is, the light-emitting element 110b can be said to have the pixel electrode 111, the semi-transmissive layer 116 a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure.

[0055] The semi-transmissive layer 116a does not overlap with the light-emitting region of the light-emitting element 110W, but overlaps with the light-emitting regions of the light-emitting element 110a and the light-emitting element 110b. The semi-transmissive layer 116b does not overlap with the light-emitting regions of the light-emitting element 110W and the light-emitting element 110a, but overlaps with the light-emitting region of the light-emitting element 110b. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure.

[0056] The microcavity structure is applied to the light-emitting element 110a and the light-emitting element 110b respectively. The optical adjustment layer 112a and the optical adjustment layer 112b are layers with different thicknesses from each other. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. 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Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. 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Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. a, and the semi-transmissive layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure. [[ Since the strength increases, high-purity-color light can be obtained from the light-emitting element 110a and the light-emitting element 110b, respectively.

[0057] The thickness of the semi-transmissive layer overlapping the light-emitting region is different between the light-emitting element 110a and the light-emitting element 110b. Specifically, in the light-emitting region of the light-emitting element 110b, in addition to the semi-transmissive layer 116a, the semi-transmissive layer 1 116b overlaps, so the amount of light reflected by the semi-transmissive layer increases, and the intensity of light of a specific wavelength becomes stronger. Thus, in the light-emitting element 110b, light with particularly high color purity can be obtained.

[0058] In this way, by varying one or both of the thickness and material of the semi-transmissive layer for each sub-pixel of each color, the reflectivity of the semi-transmissive layer to visible light can be changed. As a result, the degree to which the light intensity is enhanced can be changed for each sub-pixel of each color.

[0059] The light-emitting element 110W and the light-emitting element 110a shown in FIG. 1(C) are different from FIG. 1(A) in that the thickness of the optical adjustment layer 112W is equal to the thickness of the optical adjustment layer 112a (thickness L). The thickness of the optical adjustment layer 112W and the thickness of the optical adjustment layer 112a may be the same or different.

[0060] Since the light-emitting element 110W does not overlap with the semi-transmissive layer 116, it does not have a microcavity structure. However, as shown in FIG. 1(D), a part of the light 113EM emitted from the EL layer 113 is reflected by the pixel electrode 111, so that the light of a specific wavelength is enhanced. Therefore, it is preferable to set the thickness of the optical adjustment layer 112W according to the enhanced wavelength, and the thickness of the optical adjustment layer 11 2W may be equal to the thickness of the optical adjustment layer of other color sub-pixels. ​​​​​

[0061] For example, when the light 113EM emitted from the light-emitting element 110W of the sub-pixel exhibiting white light is white light with a low color temperature, it is preferable to make the thickness of the optical adjustment layer 112W equal to the thickness of the optical adjustment layer used for the blue sub-pixel. Thereby, the intensity of the light having the blue wavelength of the light 113EM is enhanced, and the light transmitted through the common electrode 114 can be made to approach white light having a desired color temperature. When it is, the thickness of the optical adjustment layer 112W is preferably made equal to the thickness of the optical adjustment layer used for the blue sub-pixel. This enhances the intensity of the light of the blue wavelength of the light 113EM and allows the light transmitted through the common electrode 114 to approach white light of a desired color temperature. By doing so, the intensity of the light of the blue wavelength of the light 113EM is enhanced, and the light transmitted through the common electrode 114 can be made to approach white light of a desired color temperature. By doing so, the intensity of the light of the blue wavelength of the light 113EM is enhanced, and the light transmitted through the common electrode 114 can be made to approach white light of a desired color temperature. light having a desired color temperature.

[0062] The pixel electrode 111 has reflectivity with respect to visible light. The optical adjustment layer 112a, the optical adjustment layer 112b, the optical adjustment layer 112W, and the common electrode 114 each have transparency with respect to visible light. The semi-transmissive layer 116, the semi-transmissive layer 116a, and the semi-transmissive layer 116b each have both reflectivity with respect to visible light and transparency with respect to visible light. The pixel electrode 111, the optical adjustment layer 112a, the optical adjustment layer 112W, the common electrode 114, the semi-transmissive layer 116, the semi-transmissive layer 116a, and the semi-transmissive layer 116b can each be appropriately combined with the following materials so as to satisfy the above-described functions and used. For example, metals, alloys, electrically conductive compounds, and mixtures thereof can be appropriately used. Specifically, indium tin oxide (also referred to as ITO), indium silicon tin oxide (also referred to as ITSO), indium zinc oxide, indium tungsten zinc oxide, indium gallium zinc oxide (also referred to as IGZO) can be mentioned. Other examples include aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W). The pixel electrode 111 has reflectivity for visible light. The optical adjustment layer 112a, the optical adjustment layer 112b, the optical adjustment layer 112W, and the common electrode 114 each have transparency for visible light. The semi-transmissive layers 116, 116a, and 116b each have both reflectivity for visible light and transparency for visible light. The pixel electrode 111, the optical adjustment layer 112a, the optical adjustment layer 112W, the common electrode 114, the semi-transmissive layer 116, the semi-transmissive layer 116a, and and the semi-transmissive layer 116b can each be appropriately combined with the following materials to satisfy the above functions and used. For example, metals, alloys, electrically conductive compounds, and mixtures thereof can be used as appropriate. For example, metals, alloys, electrically conductive compounds, and mixtures thereof can be used as appropriate. Specifically, indium tin oxide (also referred to as ITO), indium silicon tin oxide (also referred to as ITSO), indium zinc oxide, indium tungsten zinc oxide, indium gallium zinc oxide (also referred to as IGZO) can be mentioned. For example, metals, alloys, electrically conductive compounds, and mixtures thereof can be used as appropriate. Specifically, indium tin oxide (also referred to as ITO), indium silicon tin oxide (also referred to as ITSO), indium zinc oxide, indium tungsten zinc oxide, indium gallium zinc oxide (also referred to as IGZO) can be mentioned. (ITO), indium silicon tin oxide (also referred to as ITSO), indium zinc oxide, indium tungsten zinc oxide, indium gallium zinc oxide (also referred to as IGZO) can be mentioned. oxide, indium gallium zinc oxide (also referred to as IGZO) can be mentioned. Other examples include aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W). oxide, indium gallium zinc oxide (also referred to as IGZO) can be mentioned. Other examples include aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W). oxide, indium gallium zinc oxide (also referred to as IGZO) can be mentioned. Other examples include aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W). (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium ( Y), metals such as neodymium (Nd), and alloys containing these appropriately combined can also be used. In addition, elements belonging to Group 1 or Group 2 of the periodic table not exemplified above ( for example, lithium (Li), cesium (Cs), calcium (Ca), strontium ( Sr)), rare earth metals such as europium (Eu), ytterbium (Yb), and alloys containing these appropriately combined, graphene, etc. can be used. For the semi-transmissive layer 116, a metal with a thickness that allows light to pass through (for example, a thickness of 1 nm or more and 30 nm or less) can be preferably used. As the metal, silver (Ag) or an alloy containing Ag can be used, and in this case, the reflectance of the semi-transmissive layer 116 is high, and the luminous efficiency of the light-emitting element 110a can be increased, which is preferable. Also, since Ag has a low absorption rate of visible light, a film that achieves both transmissivity and reflectivity with respect to visible light can be formed by setting the thickness to a degree that allows light to pass through.

[0063] When the semi-transmissive layer 116 has conductivity, the semi-transmissive layer 116 may be in a floating state or may have a predetermined potential supplied thereto. When using aluminum (Al) or a material containing Ag for the pixel electrode 111, the reflectance of the pixel electrode 111 is high, and the luminous efficiency of the light-emitting element can be increased, which is preferable. Note that since Al has a low material cost and is easy to pattern, the manufacturing cost of the light-emitting element is low, which is preferable. Also, since Ag has a particularly high reflectance, it can increase the luminous efficiency of the light-emitting element, which is preferable. When silver (Ag) or an alloy containing Ag is used, the reflectance of the semi-transmissive layer 116 is high, and the luminous efficiency of the light-emitting element 110a can be increased, which is preferable. Also, since Ag has a low absorption rate of visible light, a film that achieves both transmissivity and reflectivity with respect to visible light can be formed by setting the thickness to a degree that allows light to pass through. Moreover, since Ag has a low absorption rate of visible light, a film that achieves both transmissivity and reflectivity with respect to visible light can be formed by setting the thickness to a degree that allows light to pass through. Moreover, since Ag has a low absorption rate of visible light, a film that achieves both transmissivity and reflectivity with respect to visible light can be formed by setting the thickness to a degree that allows light to pass through.

[0064] When the semi-transmissive layer 116 has conductivity, the semi-transmissive layer 116 may be in a floating state or may have a predetermined potential supplied thereto. When the semi-transmissive layer 116 has conductivity, the semi-transmissive layer 116 may be in a floating state or may have a predetermined potential supplied thereto.

[0065] When using aluminum (Al) or a material containing Ag for the pixel electrode 111, the reflectance of the pixel electrode 111 is high, and the luminous efficiency of the light-emitting element can be increased, which is preferable. Note that since Al has a low material cost and is easy to pattern, the manufacturing cost of the light-emitting element is low, which is preferable. Moreover, since Ag has a particularly high reflectance, it can increase the luminous efficiency of the light-emitting element, which is preferable. Moreover, since Ag has a particularly high reflectance, it can increase the luminous efficiency of the light-emitting element, which is preferable. Moreover, since Ag has a particularly high reflectance, it can increase the luminous efficiency of the light-emitting element, which is preferable.

[0066] Optical adjustment layer 112a, optical adjustment layer 112b, optical adjustment layer 112W, and common electrode 114 For this, a metal oxide can be preferably used. The metal oxide preferably has one or both of indium (In) and zinc (Zn). By having one or both of In and Zn in the metal oxide, the conductivity can be increased and the light transmittance can be increased. Also, since Zn has a low material cost, the manufacturing cost of the light-emitting element is lowered, which is preferable.

[0067] When a material containing Al and an oxide containing In are in contact, a difference in ionization tendency occurs between the material containing Al and the oxide containing In so that electron transfer occurs between the materials, and electrolytic corrosion may occur at the electrode having the materials. Therefore, it is preferable that the material containing Al and the oxide containing In do not contact each other. From this also, as the metal that the pixel electrode 11 1 has, Ag is particularly preferable.

[0068] The EL layer 113 has a light-emitting layer containing a light-emitting substance. Since the display device of the present embodiment uses a white light-emitting light-emitting element, the EL layer 113 has a configuration in which two lights in a complementary color relationship can be obtained, or a configuration in which three lights of red, green, and blue can be obtained, etc. are applied. As the light-emitting substance one or both of a fluorescent light-emitting material and a phosphorescent light-emitting material can be used. The EL layer 113 has, in addition to the light-emitting layer, a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a charge generation layer, etc. functional layers.

[0069] Since the display device of the present embodiment has a configuration in which a white light-emitting light-emitting element and a color filter are combined the configuration of the EL layer 113 in each sub-pixel of each color can be made the same.

[0070] By using a film with high barrier properties for the protective layer 115, impurities such as moisture and oxygen can be prevented from entering the light-emitting element. This can suppress the deterioration of the light-emitting element and improve the reliability of the display device.

[0071] In the display device of this embodiment, the semi-transmissive layer 116 is provided so as not to overlap with the light-emitting region of the light-emitting element 110W. For example, by processing the film that becomes the semi-transmissive layer 116, the semi-transmissive layer 116 can be formed in a desired shape. Specifically, first, a film having both transmissivity and reflectivity with respect to visible light is formed, and then the film is processed to form the semi-transmissive layer 116 only in a desired region. Here, when the film is processed, if there is no protective layer 115 on the EL layer 11 3 or only a protective layer 115 with low barrier properties is provided, impurities may be mixed into the EL layer 113, and the reliability of the light-emitting element may decrease. From this fact, it is required to use a film with high barrier properties for the protective layer 115. By using a film with high barrier properties as the protective layer 115, it is possible to suppress the entry of impurities into the light-emitting element when the semi-transmissive layer 116 is formed.

[0072] There is no particular limitation on the method used for processing the semi-transmissive layer 116. For example, a wet etching method, a dry etching method, or a lift-off method can be used.

[0073] When processing the film that becomes the semi-transmissive layer 116 using the dry etching method, the thickness of the protective layer 115 may be partially reduced. Specifically, in the portion overlapping with the light-emitting region of the light-emitting element 110W where the film that becomes the semi-transmissive layer 116 is removed, the thickness of the protective layer 115 is smaller than that of other portions. ​​​​​​​​It may become thinner. FIG. 1(E) shows the removed region 115n of the protective layer 115 that overlaps with the light-emitting element 110W. Since the light-emitting element 110W does not have a microcavity structure, even if the thickness of the protective layer 115 becomes thinner, the influence on the emission color is small. However, in order to prevent the reliability of the light-emitting element from decreasing, it is preferably covered with a protective layer 115 having a sufficient thickness. Also, since the thickness of the protective layer 115 affects the optical distance between the pixel electrode 111 and the semi-transmissive layer 116, if it is too thick, light of a specific wavelength may be overly enhanced. For these reasons, the thickness of the protective layer 115 is 1 nm or more and 1000 nm or less, preferably 50 nm or more and 500 nm or less, and more preferably 100 nm or more and 300 nm or less. The protective layer 115 preferably has at least one inorganic film (or inorganic insulating film), and more preferably has one or more inorganic films and one or more organic films. For example, the protective layer 115 may have a first inorganic film on the common electrode 114, an organic film on the first inorganic film, and a second inorganic film on the organic film. The inorganic film (or inorganic insulating film) preferably has high moisture resistance and is difficult for water to diffuse and permeate. Furthermore, it is preferable that one or both of hydrogen and oxygen are difficult to diffuse and permeate through the inorganic film (or inorganic insulating film). Thereby, the inorganic film (or inorganic insulating film) can function as a barrier film. And it can effectively suppress the diffusion of impurities from the outside to the light-emitting element, and a highly reliable display device can be realized. The protective layer 115 includes an oxide insulating film, a nitride insulating film, an oxynitride insulating film, a nitroxide insulating film, and the like. It may become thinner. FIG. 1(E) shows the removed region 115n of the protective layer 115 that overlaps with the light-emitting element 110W. Since the light-emitting element 110W does not have a microcavity structure, even if the thickness of the protective layer 115 becomes thinner, the influence on the emission color is small. However, in order to prevent the reliability of the light-emitting element from decreasing, it is preferably covered with a protective layer 115 having a sufficient thickness. Also, since the thickness of the protective layer 115 affects the optical distance between the pixel electrode 111 and the semi-transmissive layer 116, if it is too thick, light of a specific wavelength may be overly enhanced. For these reasons, the thickness of the protective layer 115 is 1 nm or more and 1000 nm or less, preferably 50 nm or more and 500 nm or less, and more preferably 100 nm or more and 300 nm or less. The protective layer 115 preferably has at least one inorganic film (or inorganic insulating film), and more preferably has one or more inorganic films and one or more organic films. For example, the protective layer 115 may have a first inorganic film on the common electrode 114, an organic film on the first inorganic film, and a second inorganic film on the organic film.

[0074] The inorganic film (or inorganic insulating film) preferably has high moisture resistance and is difficult for water to diffuse and permeate. Furthermore, it is preferable that one or both of hydrogen and oxygen are difficult to diffuse and permeate through the inorganic film (or inorganic insulating film). Thereby, the inorganic film (or inorganic insulating film) can function as a barrier film. And it can effectively suppress the diffusion of impurities from the outside to the light-emitting element, and a highly reliable display device can be realized. The protective layer 115 includes an oxide insulating film, a nitride insulating film, an oxynitride insulating film, a nitroxide insulating film, and the like. It may become thinner. FIG. 1(E) shows the removed region 115n of the protective layer 115 that overlaps with the light-emitting element 110W. Since the light-emitting element 110W does not have a microcavity structure, even if the thickness of the protective layer 115 becomes thinner, the influence on the emission color is small. However, in order to prevent the reliability of the light-emitting element from decreasing, it is preferably covered with a protective layer 115 having a sufficient thickness. Also, since the thickness of the protective layer 115 affects the optical distance between the pixel electrode 111 and the semi-transmissive layer 116, if it is too thick, light of a specific wavelength may be overly enhanced. For these reasons, the thickness of the protective layer 115 is 1 nm or more and 1000 nm or less, preferably 50 nm or more and 500 nm or less, and more preferably 100 nm or more and 300 nm or less.

[0075] The protective layer 115 preferably has at least one inorganic film (or inorganic insulating film), and more preferably has one or more inorganic films and one or more organic films. For example, the protective layer 115 may have a first inorganic film on the common electrode 114, an organic film on the first inorganic film, and a second inorganic film on the organic film. The inorganic film (or inorganic insulating film) preferably has high moisture resistance and is difficult for water to diffuse and permeate. Furthermore, it is preferable that one or both of hydrogen and oxygen are difficult to diffuse and permeate through the inorganic film (or inorganic insulating film). Thereby, the inorganic film (or inorganic insulating film) can function as a barrier film. And it can effectively suppress the diffusion of impurities from the outside to the light-emitting element, and a highly reliable display device can be realized. The protective layer 115 includes an oxide insulating film, a nitride insulating film, an oxynitride insulating film, a nitroxide insulating film, and the like. It may become thinner. FIG. 1(E) shows the removed region 115n of the protective layer 115 that overlaps with the light-emitting element 110W. Since the light-emitting element 110W does not have a microcavity structure, even if the thickness of the protective layer 115 becomes thinner, the influence on the emission color is small. However, in order to prevent the reliability of the light-emitting element from decreasing, it is preferably covered with a protective layer 115 having a sufficient thickness. Also, since the thickness of the protective layer 115 affects the optical distance between the pixel electrode 111 and the semi-transmissive layer 116, if it is too thick, light of a specific wavelength may be overly enhanced. For these reasons, the thickness of the protective layer 115 is 1 nm or more and 1000 nm or less, preferably 50 nm or more and 500 nm or less, and more preferably 100 nm or more and 300 nm or less.

[0076] The protective layer 115 preferably has at least one inorganic film (or inorganic insulating film), and more preferably has one or more inorganic films and one or more organic films. For example, the protective layer 115 may have a first inorganic film on the common electrode 114, an organic film on the first inorganic film, and a second inorganic film on the organic film. can be used. As the oxide insulating film, a silicon oxide film, an aluminum oxide film, an acid gallium oxide film, a germanium oxide film, a yttrium oxide film, a zirconium oxide film, a la nthanum oxide film, a neodymium oxide film, a hafnium oxide film, a tantalum oxide film, etc. can be mentioned. As the nitride insulating film, a silicon nitride film, an aluminum nitride film, etc. can be mentioned. As the oxynitride insulating film, a silicon oxynitride film, etc. can be mentioned. As the nitroxide insulating film, a silicon nitroxide film, etc. can be mentioned.

[0077] In addition, in this specification, etc., oxynitride refers to a material having a higher oxygen content than nitrogen in its composition, and nitroxide refers to a material having a higher nitrogen content than oxygen in its composition.

[0078] In particular, a silicon nitride film, a silicon oxynitride film, and an aluminum oxide film are each suitable as the protective layer 115 because of their high moisture resistance.

[0079] Also, from the viewpoint of light extraction efficiency, the difference between the refractive index of the protective layer 115 and the refractive index of the common electrode 114 is preferably 0.5 or less, and particularly preferably 0.3 or less. The refractive index of the common electrode 114 is relatively high. When ITO is used for the common electrode 114, the refractive index of the common electrode 114 is about 2.0. Therefore, it is preferable to use a material having a relatively high refractive index also for the protective layer 115.

[0080] For example, the refractive indices of a silicon nitride film, a silicon oxynitride film, and an aluminum oxide film are approximately 1.7 or more and 2.3 or less, and are higher than that of a silicon oxide film (refractive index of about 1.5). From this also, a silicon nitride film, a silicon oxynitride film, and an aluminum oxide ​​​​​​​​​The films are each suitable as the protective layer 115.

[0081] In addition, an inorganic film containing ITO, Ga-Zn oxide, Al-Zn oxide, or In-Ga-Zn oxide or the like can also be used for the protective layer 115. The inorganic film is preferably highly resistive, and preferably has a higher resistance than the common electrode 114. The inorganic film may further contain nitrogen. For example, the conductive film that transmits visible light used for the common electrode 114 and the inorganic film that transmits visible light used for the protective layer 115 may have a common metal element. The adhesion between the common electrode 114 and the protective layer 115 can be enhanced, and film peeling and the entry of impurities from the interface can be suppressed. For example, a first ITO film can be used for the common electrode 114, and a second ITO film can be used for the protective layer 115. The second ITO film is preferably a film having a higher resistivity than the first ITO film. Also, for example, a first Ga-Zn oxide film can be used for the common electrode 114, and a second Ga-Zn oxide film can be used for the protective layer 115. The second Ga-Zn oxide film is preferably a film having a higher resistivity than the first Ga-Zn oxide film.

[0082]

[0083]

[0084] The inorganic film containing Ga, Zn, and O can be obtained, for example, by using a Ga-Zn-O-based metal oxide target (a mixed sintered body of Ga2O3 and ZnO) and forming a film in an oxygen atmosphere or an argon and oxygen mixed atmosphere. Also, the insulating film containing Al, Zn, and O can be obtained, for example, by using an Al-Zn-O-based metal oxide target (a mixed sintered body of Al2O3 and ZnO). ​​​​​​​​​​​​​, obtained by film formation under the same atmosphere. Also, by forming the same target in an atmosphere of mixed argon, oxygen and nitrogen, an inorganic film containing Ga or Al, Zn, O and N can be obtained. The inorganic film containing Ga or Al, Zn, O and N can be obtained by forming the same target in an atmosphere of mixed argon, oxygen and nitrogen.

[0085] Further, the protective layer 115 may have an organic insulating film using an acrylic resin, an epoxy resin, a polyimide resin, a polyamide resin, a polyimide amide resin, a polysiloxane resin, a benzocyclobutene-based resin, a phenol resin, etc.

[0086] The protective layer 115 preferably has a specific resistance of 10 10 Ωcm or more at 20°C.

[0087] The protective layer 115 can be formed by a chemical vapor deposition (CVD) method (such as a plasma enhanced chemical vapor deposition (PECVD) method), a sputtering method ( a DC sputtering method, an RF sputtering method, an ion beam sputtering method, etc.), an atomic layer deposition (ALD) method, etc. The sputtering method and the ALD method enable film formation at low temperatures. The EL layer 113 included in the light emitting element has low heat resistance. Therefore, the protective layer 115 formed after manufacturing the light emitting element is preferably formed at a relatively low temperature, typically 100°C or lower, and the sputtering method and the ALD method are suitable.

[0088] Two or more insulating films formed using different film formation methods may be laminated as the protective layer 115.

[0089] ​​​​​​​​​

[0090] For example, first, using a sputtering method, a first inorganic film is formed, and using an ALD method it is preferable to form a second inorganic film.

[0091] The film formed by the sputtering method has fewer impurities and higher density than the film formed by the ALD method. The film formed by the ALD method has higher step coverage than the film formed by the sputtering method and is less affected by the shape of the film-forming surface.

[0092] The first inorganic film has fewer impurities and higher density. The second inorganic film is formed to cover a portion where the first inorganic film is not sufficiently covered due to the influence of the step of the surface to be formed. Thereby, a protective layer capable of further reducing diffusion of water or the like can be formed as compared with the case of forming only one inorganic film.

[0093] Specifically, first, using a sputtering method, an aluminum oxide film, a zirconium oxide film, an ITO film, a Ga-Zn oxide film, an Al-Zn oxide film, or an In-Ga-Zn oxide film is formed, and then, using an ALD method, an aluminum oxide film or a zirconium oxide film is preferably formed.

[0094] The thickness of the inorganic film formed using the sputtering method is preferably 50 nm or more and 1000 nm or less, and more preferably 100 nm or more and 300 nm or less.

[0095] The thickness of the inorganic film formed using the ALD method is preferably 1 nm or more and 100 nm or less, and more preferably 5 nm or more and 50 nm or less.

[0096] The water vapor transmission rate of the protective layer 115 is 1×10 -2 ​​​​​​​​​g / (m 2 ·day) less than, preferably 5 ×10 -3 g / (m 2 ·day) or less, preferably 1×10 -4 g / (m 2 ·day) or less, preferably 1×10 g(m -5 ·day) or less, preferably 1×10 2 g / (m -6 g / (m 2 ·day) or less. The lower the water vapor transmission rate, the lower the diffusion of water from the outside to the light-emitting element can be reduced.

[0097] Note that an inorganic insulating film or an organic insulating film that can be used for the protective layer 115 may be used for the insulating layer 104.

[0098] The insulating layer 104 formed before manufacturing the light-emitting element enables film formation at a high temperature. By setting the substrate temperature during film formation to a high temperature (for example, 100°C or higher and 350°C or lower), a dense and highly barrier film can be formed. For forming the insulating layer 104, not only the sputtering method and the ALD method but also the CVD method is suitable. The CVD method is preferable because of its high film formation rate.

[0099] For the substrate 101, materials such as glass, quartz, organic resin, metal, alloy, and semiconductor can be used. Further, as will be described later in Embodiment 2, various semiconductor circuits may be provided on the substrate 101.

[0100] [Pixel] FIG. 2(A) and FIG. 2(B) show an example of a top view of the pixel 130. The pixel 13 0 shown in FIG. 2(A) has sub-pixels arranged in 1 row and 4 columns. The pixel 130 shown in FIG. 2(B) has sub-pixels arranged in 2 rows and 2 columns.

[0101] ​​​​​​​​ In FIGS. 2(A) and 2(B), a display device that represents one color with four sub-pixels of R (red), G (green), B (blue), and W (white) will be described as an example. In the display device according to one aspect of the present invention there is no limitation to color elements, and colors other than RGBW (for example, yellow, cyan, or magenta etc.) may be used.

[0102] FIG. 2(C) is a cross-sectional view between the dashed-dotted line A1 - A2 in FIG. 2(A).

[0103] The light-emitting element 110W of the sub-pixel that exhibits white light has a pixel electrode 111 on the substrate 101, an optical adjustment layer 112W on the pixel electrode 111, an EL layer 113 on the optical adjustment layer 112W, and a common electrode 114 on the EL layer 113.

[0104] The light-emitting element 110R of the sub-pixel that exhibits red light has a pixel electrode 111 on the substrate 101, an optical adjustment layer 112R on the pixel electrode 111, an EL layer 113 on the optical adjustment layer 112R, and a common electrode 114 on the EL layer 113.

[0105] The light-emitting element 110G of the sub-pixel that exhibits green light has a pixel electrode 111 on the substrate 101, an optical adjustment layer 112G on the pixel electrode 111, an EL layer 113 on the optical adjustment layer 112G, and a common electrode 114 on the EL layer 113.

[0106] The light-emitting element 110B of the sub-pixel that exhibits blue light has a pixel electrode 111 on the substrate 101, an optical adjustment layer 112B on the pixel electrode 111, an EL layer 113 on the optical adjustment layer 112B, and a common electrode 114 on the EL layer 113.

[0107] The pixel electrode 111 functions as an anode. The optical adjustment layers 112W, 112R, and The optical adjustment layer 112G and the optical adjustment layer 112B have conductivity. The end of the pixel electrode 111 , the end of the optical adjustment layer 112W, the optical adjustment layer 112R, the optical adjustment layer 112G, and the end of the optical adjustment layer 112B are each covered by the insulating layer 104. The insulating layer 104 has an opening in the portion overlapping the pixel electrode 111. The EL layer 113 has at least a light-emitting layer . The common electrode 114 functions as a cathode. The EL layer 113 and the common electrode 114 are each provided over a plurality of light-emitting elements.

[0108] The light-emitting elements 110W, 110R, 110G, and 110B are covered by a protective layer 115.

[0109] The light-emitting elements 110R, 110G, and 110B each overlap with the semi-transmissive layer 116 through the protective layer 11 5. The semi-transmissive layer 116 does not overlap with the light-emitting region of the light-emitting element 110W , and overlaps with the light-emitting regions of the light-emitting elements 110R, 110G, and 110B respectively .

[0110] Note that the semi-transmissive layer 116 can also be regarded as a component of the light-emitting elements 110R, 110G, and 110B. That is, it can be said that the light-emitting elements 110R, 110G, and 110B each have a pixel electrode 111 and a semi-transmissive layer 116. Also, it can be said that the light-emitting elements 110R, 110G, and 110B each have a microcavity structure. Also, it can be said that the light-emitting element 110 W does not have a microcavity structure.

[0111] ​​The light-emitting elements 110R, 110G, and 110B are each provided with a microcavity structure.

[0112] In the light-emitting element 110R, the film thickness of the optical adjustment layer 112R is adjusted so that the optical distance between the pixel electrode 111 and the semi-transmissive layer 116 becomes an optical distance that enhances red light emission. Similarly, in the light-emitting element 1 10G, the film thickness of the optical adjustment layer 112G is adjusted so that the optical distance between the pixel electrode 111 and the semi-transmissive layer 116 becomes an optical distance that enhances green light emission. And in the light-emitting element 110B, the film thickness of the optical adjustment layer 112B is adjusted so that the optical distance between the pixel electrode 111 and the semi-transmissive layer 116 becomes an optical distance that enhances blue light emission. By adjusting the optical distance between the pixel electrode 111 and the semi-transmissive layer 116, the light extraction efficiency for light of a desired wavelength can be increased. As a result, red, green, and blue light with high color purity can be obtained from the sub-pixels that exhibit red, green, and blue light, respectively. On the other hand, the light-emitting element 110W does not have a microcavity structure applied thereto. The light emitted from the light-emitting layer is extracted to the outside by the semi-transmissive layer 116 without the intensity of light of a specific wavelength being enhanced. Therefore, the light-emitting element 110W can efficiently extract white light to the outside. Accordingly, the power consumption of the display device can be reduced. Note that FIG. 2(C) shows an example in which the thickness of the optical adjustment layer 112W is equal to the thickness of the optical adjustment layer 112B. As described with reference to FIG. 1(D), in the light-emitting element 110W, part of the light 113EM from the EL layer 113

[0113] is reflected by the pixel electrode 111. In the light-emitting element 1 shown in FIG. 2(C) is extracted to the outside without the intensity of light of a specific wavelength being enhanced by the semi-transmissive layer 116. Therefore, the light-emitting element 110W can efficiently extract white light to the outside. Accordingly, the power consumption of the display device can be reduced.

[0114] Note that FIG. 2(C) shows an example in which the thickness of the optical adjustment layer 112W is equal to the thickness of the optical adjustment layer 112B. As described using FIG. 1(D), in the light-emitting element 110W, part of the light 113EM from the EL layer 113 is reflected by the pixel electrode 111. As shown in FIG. 2(C), in the light-emitting element 1 from the EL layer 113, part of the light 113EM is reflected by the pixel electrode 111. In the light-emitting element 1 shown in FIG. 2(C) In the case of 10W, part of the light from the EL layer 113 is reflected by the pixel electrode 111, and the intensity of the light with a blue wavelength is enhanced and emitted through the common electrode 114. Thus, when the light emitted from the EL layer 113 is white light with a low color temperature, etc., the light emitted from the light-emitting element 110W of the sub-pixel presenting white light can be made closer to white light with a desired color temperature. The display devices shown in FIGS. 2(A) and 2(C) have light-emitting elements to which a microcavity structure is applied for sub-pixels presenting red, green, and blue light, and have light-emitting elements to which a microcavity structure is not applied for sub-pixels presenting white light. By adopting such a configuration, it is possible to enhance the light extraction efficiency of both high-color-purity light and white light, and to realize a display device with high display quality and low power consumption. In the case where the light emitted from the EL layer 113 is white light with a low color temperature, etc., the light emitted from the light-emitting element 110W of the sub-pixel presenting white light can be made closer to white light with a desired color temperature. In the case where the light emitted from the EL layer 113 is white light with a low color temperature, etc., the light emitted from the light-emitting element 110W of the sub-pixel presenting white light can be made closer to white light with a desired color temperature.

[0115] The display devices shown in FIGS. 2(A) and 2(C) have light-emitting elements to which a microcavity structure is applied for sub-pixels presenting red, green, and blue light, and have light-emitting elements to which a microcavity structure is not applied for sub-pixels presenting white light. By adopting such a configuration, it is possible to enhance the light extraction efficiency of both high-color-purity light and white light, and to realize a display device with high display quality and low power consumption. By adopting such a configuration, it is possible to enhance the light extraction efficiency of both high-color-purity light and white light, and to realize a display device with high display quality and low power consumption. By adopting such a configuration, it is possible to enhance the light extraction efficiency of both high-color-purity light and white light, and to realize a display device with high display quality and low power consumption. By adopting such a configuration, it is possible to enhance the light extraction efficiency of both high-color-purity light and white light, and to realize a display device with high display quality and low power consumption.

[0116] FIG. 2(D) is a cross-sectional view between the dashed-dotted lines A1 - A2 in FIG. 2(A), which is different from FIG. 2(C). FIG. 2(D) is a cross-sectional view between the dashed-dotted lines A1 - A2 in FIG. 2(A), which is different from FIG. 2(C).

[0117] The light-emitting elements of the sub-pixels presenting light of each color have a pixel electrode 118, an EL layer 113 on the pixel electrode 118, and a common electrode 114 on the EL layer 113. The light-emitting elements of the sub-pixels presenting light of each color have a pixel electrode 118, an EL layer 113 on the pixel electrode 118, and a common electrode 114 on the EL layer 113.

[0118] The pixel electrode 118 functions as an anode. The end of the pixel electrode 118 is covered by an insulating layer 104. The insulating layer 104 has an opening in a portion overlapping the pixel electrode 118. The EL layer 113 has at least a light-emitting layer. The common electrode 114 functions as a cathode. The pixel electrode 118 functions as an anode. The end of the pixel electrode 118 is covered by an insulating layer 104. The insulating layer 104 has an opening in a portion overlapping the pixel electrode 118. The EL layer 113 has at least a light-emitting layer. The common electrode 114 functions as a cathode. The pixel electrode 118 functions as an anode. The end of the pixel electrode 118 is covered by an insulating layer 104. The insulating layer 104 has an opening in a portion overlapping the pixel electrode 118. The EL layer 113 has at least a light-emitting layer. The common electrode 114 functions as a cathode.

[0119] Each light-emitting element is covered by a protective layer 115.

[0120] The light-emitting elements 110R, 110G, and 110B respectively overlap with the semi-transmissive layer 116 through the protective layer 11 5. The semi-transmissive layer 116 does not overlap with the light-emitting region of the light-emitting element 110W, and overlaps with the light-emitting regions of the light-emitting elements 110R, 110G, and 110B respectively .

[0121] Furthermore, the reflective layer 117 on the substrate 101 and the optical adjustment layer 119a on the reflective layer 117 can be regarded as components of the light-emitting element 110W of the sub-pixel that exhibits white light. Similarly, the reflective layer 117 on the substrate 101, the optical adjustment layer 119a on the reflective layer 117, the optical adjustment layer 119b on the optical adjustment layer 119a, and the optical adjustment layer 119c on the optical adjustment layer 119b can be regarded as components of the light-emitting element 110R of the sub-pixel that exhibits red light . Also, the reflective layer 117 on the substrate 101, the optical adjustment layer 119a on the reflective layer 117, and the optical adjustment layer 119b on the optical adjustment layer 119a can be regarded as components of the light-emitting element 110G of the sub-pixel that exhibits green light. Also, the reflective layer 117 on the substrate 101 and the optical adjustment layer 119a on the reflective layer 117 can be regarded as components of the light-emitting element 110B of the sub-pixel that exhibits blue light . . The reflectivity of the reflective layer 117 with respect to visible light is higher than that of the pixel electrode 111 with respect to visible light. The pixel electrode 111 and the common electrode 114 can also be said to be transparent electrodes. The reflectivity of the semi-transmissive layer 116 with respect to visible light is preferably higher than that of the common electrode 114 with respect to visible light and lower than that of the reflective layer 117 with respect to visible light . .

[0122] .

[0123] ​​​​​​For example, the reflectance of visible light of the reflective layer 117 is 40% or more and 100% or less, preferably 70% or more and 100% or less. Further, for example, the reflectance of visible light of the semi-transmissive layer 116 is 20% or more and 80% or less, preferably 40% or more and 70% or less. Further, for example, the transmittance of visible light of the pixel electrode 111 and the common electrode 114 is 40% or more.

[0124] A microcavity structure is applied to the light-emitting elements 110R, 110G, and 110B.

[0125] In the light-emitting elements 110R, 110G, and 110B, the optical distances between the reflective layer 117 and the semi-transmissive layer 116 are made to be the optical distances that enhance red light emission, green light emission, and blue light emission, respectively. The film thicknesses of the optical adjustment layers 119a, 119b, and 119c are adjusted. By adjusting the optical distance between the reflective layer 117 and the semi-transmissive layer 116, the light extraction efficiency for light of a desired wavelength can be increased. As a result, from the sub-pixels that exhibit red, green, and blue light, red, green, and blue light with high color purity can be obtained, respectively.

[0126] FIG. 2(C) is an example in which the pixel electrode 111 is a reflective electrode and an optical adjustment layer is provided between the pixel electrode 111 and the EL layer 113. As shown in FIG. 2(D), when the pixel electrode 118 is a transparent electrode and the reflective layer 117 is provided on the side opposite to the EL layer 113 as viewed from the pixel electrode 118 it may be provided. At this time, an optical adjustment layer can be provided between the reflective layer 117 and the pixel electrode 118. In the configuration of FIG. 2(D), since an insulating layer can be used for the optical adjustment layer the range of materials becomes wider, which is preferable.

[0127] ​​​​​​On the other hand, the light-emitting element 110W does not have a microcavity structure applied thereto. The light emitted from the light-emitting layer is extracted to the outside without the intensity of light of a specific wavelength being enhanced by the semi-transmissive layer 116. Therefore, the light-emitting element 110W can efficiently extract white light to the outside. Accordingly, the power consumption of the display device can be reduced.

[0128] The display devices shown in FIGS. 2(A) and 2(D) have light-emitting elements to which a microcavity structure is applied in sub-pixels that exhibit red, green, and blue light, and have light-emitting elements to which a microcavity structure is not applied in sub-pixels that exhibit white light. By adopting such a configuration, it is possible to improve the light extraction efficiency of both light with high color purity and white light, and to realize a display device with high display quality and low power consumption.

[0129] FIG. 2(E) is a cross-sectional view taken between the dashed-dotted lines A1-A2 in FIG. 2(A), which is different from FIGS. 2(C) and 2(D).

[0130] In FIG. 2(E), the protective layer 115 has an opening, and a conductive layer 120 that transmits visible light is electrically connected to the common electrode 114 through the opening. A protective layer 125 is provided on the conductive layer 120 that transmits visible light. The protective layer 125 has an opening that overlaps with the light-emitting region of the light-emitting element to which a microcavity structure is applied. The semi-transmissive layer 116 is electrically connected to the conductive layer 120 that transmits visible light through the opening. Since the protective layer 115 and the protective layer 125 transmit visible light, they can be provided so as to overlap with the light-emitting region of the light-emitting element. Therefore, a wider design margin can be provided than that of the semi-transmissive layer 116. ​​​​​​​​​​​​​From the perspective of preventing degradation, it is preferable to form the protective layer 115 having an opening using a mask. Also, from the perspective of preventing degradation of the light-emitting element, it is preferable that the protective layer 115 and the protective layer 125 have overlapping portions with each other. Furthermore, an auxiliary wiring electrically connected to the semi-transmissive layer 116 and the common electrode 114 may be provided on the protective layer 125.

[0131] In the display device of this embodiment, since a conductive material that transmits visible light is used for the common electrode 114, a voltage drop due to the resistance of the common electrode 114 is likely to occur. As shown in FIG. 2(E), by electrically connecting the semi-transmissive layer 116 and the common electrode 114, the voltage drop caused by the resistance of the common electrode 114 can be suppressed. Thereby, uneven brightness of the display device can be suppressed, and the display quality of the display device can be improved.

[0132] [Layout of the semi-transmissive layer] Examples of the top surface layout of the semi-transmissive layer 116 are shown in FIGS. 3(A) to 3(E).

[0133] In FIGS. 3(A) to 3(C), examples are shown in which the semi-transmissive layer 116 has an opening at a position overlapping the light-emitting region of the light-emitting element 110W. By adopting such a configuration, the semi-transmissive layer 116 can be provided over a wide range of the display portion of the display device, which is preferable. For example, when a fixed potential is supplied to the semi-transmissive layer 116 and the semi-transmissive layer 116 is configured to serve as a shield for blocking noise, it is particularly suitable.

[0134] In FIGS. 3(A) and 3(B), examples are shown in which one opening of the semi-transmissive layer 116 overlaps the light-emitting region of one light-emitting element 110W. In FIG. 3(C), an example is shown in which one opening of the semi-transmissive layer 116 overlaps the light-emitting regions of a plurality of light-emitting elements 110W arranged in a row.

[0135] Also, as shown in FIGS. 3(D) and 3(E), the semi-transmissive layer 116 may be formed in a plurality of island shapes. In FIG. 3(D), an example is shown in which one island-shaped semi-transmissive layer 116 overlaps with the light-emitting regions of the three-color sub-pixels (R, G, B) included in one pixel 130. In FIG. 3(E), an example is shown in which one island-shaped semi-transmissive layer 116 overlaps with the light-emitting regions of the three-color sub-pixels (R, G, B) included in a plurality of pixels 130 arranged in a row. )

[0136] [Other components of the display device] Next, examples in which components are added to the display device shown in FIG. 2(C) are shown in FIGS. 4(A) to 4(C). Note that descriptions of the components described in FIG. 2(C) are omitted.

[0137] The display device shown in FIG. 4(A) includes a protective layer 121 on the protective layer 115 and on the semi-transmissive layer 116, a red colorant layer CFR on the protective layer 121, a green colorant layer CFG on the protective layer 121, and a blue colorant layer CFB on the protective layer 121.

[0138] By providing the protective layer 121, it is possible to further suppress the entry of impurities into the light-emitting element, which is preferable. As the material of the protective layer 121, a material that can be used for the protective layer 115 can be applied.

[0139] The protective layer 121 is in contact with the protective layer 115 in a region overlapping with the light-emitting region of the light-emitting element 110W. The protective layer 121 is in contact with the semi-transmissive layer 116 in each of the regions overlapping with the light-emitting region of the light-emitting element 110R, the light-emitting region of the light-emitting element 110G, and the light-emitting region of the light-emitting element 110B.

[0140] When forming the colored layer directly on the light-emitting element, alignment between the light-emitting element and the colored layer is easier than when forming the colored layer on the substrate 371 side. This facilitates high-definition of the display device, which is preferable.

[0141] As shown in FIG. 4(B), the colored layers of respective colors may be provided in contact with the semi-transmissive layer 116 without providing the protective layer 121.

[0142] Furthermore, as shown in FIG. 4(C), the light-shielding layer BM may be provided on the protective layer 121. Also, FIG. 4(C) shows an example in which a planarization layer 122 and a functional layer 123 are provided on the light-emitting element via the protective layer 115 and the protective layer 121. Note that the functional layer 123 may be provided directly on the protective layer 121 without providing the planarization layer 122.

[0143] Since the display device according to this embodiment has a highly barrier protective layer 115 (and the protective layer 121) in contact with the light-emitting element, various components can be formed directly on the light-emitting element. For example, one or both of the colored layer and the light-shielding layer BM can be provided on the light-emitting element. Also, as the functional layer 123, for example, one or more of an insulating layer, a conductive layer, a planarization layer, an adhesive layer, a circular polarizing plate, a touch sensor, a shock-absorbing layer, and a surface protection layer can be used.

[0144] Note that the semi-transmissive layer 116 may function as an electrode of the touch sensor.

[0145] The colored layer is a colored layer that transmits light in a specific wavelength range. For example, a color filter that transmits light in the wavelength range of red, green, blue, or yellow can be used. Materials that can be used for the colored layer include metal materials, resin materials, resin materials containing pigments or dyes, and the like. ​​​​​​​​​​can be cited.

[0146] The light-shielding layer BM is provided between adjacent colored layers. The light-shielding layer BM blocks the light emission of adjacent light-emitting elements and suppresses color mixing between adjacent light-emitting elements. Here, by providing the end portion of the colored layer so as to overlap with the light-shielding layer BM, light leakage can be suppressed. and suppresses color mixing between adjacent light-emitting elements. Here, by providing the end portion of the colored layer so as to overlap with the light-shielding layer BM, light leakage can be suppressed. and suppresses color mixing between adjacent light-emitting elements. Here, by providing the end portion of the colored layer so as to overlap with the light-shielding layer BM, light leakage can be suppressed. As the light-shielding layer BM, a material that blocks the light emission from the light-emitting element can be used. For example, a black matrix can be formed using a metal material, or a resin material containing a pigment or a dye. Note that it is preferable to provide the light-shielding layer BM in a region other than the display portion such as a drive circuit because it can suppress unintentional light leakage due to waveguide light or the like. or a resin material containing a pigment or a dye. Note that it is preferable to provide the light-shielding layer BM in a region other than the display portion such as a drive circuit because it can suppress unintentional light leakage due to waveguide light or the like. or a resin material containing a pigment or a dye. Note that it is preferable to provide the light-shielding layer BM in a region other than the display portion such as a drive circuit because it can suppress unintentional light leakage due to waveguide light or the like.

[0147] [Specific Example of Display Device] Next, a more specific configuration of the display device according to the present embodiment will be described with reference to FIGS. 5 to 8. .

[0148] FIG. 5(A) shows a top view of the display device 10A. FIG. 5(B) shows a cross-sectional view taken along the dashed line B1 - B2 shown in FIG. 5(A). between B1 and B2.

[0149] The display device 10A shown in FIG. 5(A) has a display portion 71 and a drive circuit 78. An FPC 74 is connected to the display device 10A. An FPC 74 is connected to the display device 10A.

[0150] The display device 10A is a top emission structure display device to which a color filter method is applied. is.

[0151] As shown in FIG. 5(B), the display device 10A includes a substrate 361, an insulating layer 367, transistors 301, 303, wirings 307, an insulating layer 314, light-emitting elements 110W, 110R, light-emitting elements 110G, 110B, an insulating layer 104, a protective layer 115, a semi-transmissive layer 116, light-emitting elements 110G, 110B, an insulating layer 104, a protective layer 115, a semi-transmissive layer 116, It has a protective layer 121, a colored layer CFR, a colored layer CFG, a colored layer CFB, an adhesive layer 318, and a substrate 37. It has the like.

[0152] Each light-emitting element has a pixel electrode 111, an EL layer 113, and a common electrode 114. The pixel electrode 111 is electrically connected to the source or drain of the transistor 303. These are either directly connected or connected via another conductive layer. The EL layer 113 and the common electrode 1 114 are provided across a plurality of light-emitting elements.

[0153] Each light-emitting element further has an optical adjustment layer between the pixel electrode 111 and the EL layer 113. The light-emitting element 110W of the sub-pixel presenting white light has an optical adjustment layer 112W, and the light-emitting element 110R of the sub-pixel presenting red light has an optical adjustment layer 112R. FIG. 5(B) shows an example where the thickness of the optical adjustment layer 112W is equal to the thickness of the optical adjustment layer 112R. As described with reference to FIG. 1(D ), in the light-emitting element 110W, part of the light 113EM from the EL layer 113 is reflected by the pixel electrode 111. In the case of the light-emitting element 110W shown in FIG. 5(B), part of the light from the EL layer 113 is reflected by the pixel electrode 111, and the intensity of the light with the red wavelength is enhanced and transmitted through the common electrode 114 and emitted. Thereby, when the light emitted from the EL layer 113 is white light with a high color temperature , the light emitted from the light-emitting element 110W of the sub-pixel presenting white light can be made closer to white light with a desired color temperature. Also, the light-emitting element 110G of the sub-pixel presenting green light has an optical adjustment layer 112G, and the light-emitting element 110B of the sub-pixel presenting blue light has an optical adjustment layer 112B. FIG. 5(B) shows an example where each optical adjustment layer covers the side surface of the pixel electrode 111. layer covers the side surface of the pixel electrode 111. FIG. 5(B) shows an example where each optical adjustment layer covers the side surface of the pixel electrode 111.

[0154] The light-emitting elements 110W, 110R, 110G, and 110B are covered by a protective layer 115.

[0155] The light-emitting elements 110R, 110G, and 110B each overlap with the semi-transmissive layer 11 5. The semi-transmissive layer 116 does not overlap with the light-emitting region of the light-emitting element 110W, and overlaps with the light-emitting regions of the light-emitting elements 110R, 110G, and 110B respectively.

[0156] The display device 10A shown in FIGS. 5(A) and 5(B) has light-emitting elements to which a microcavity structure is applied in sub-pixels that exhibit red, green, and blue light, and has light-emitting elements to which a microcavity structure is not applied in sub-pixels that exhibit white light. By adopting such a configuration, it is possible to improve the light extraction efficiency of both high-color-purity light and white light, and to realize a display device with high display quality and low power consumption.

[0157] The insulating layer 104 covers the ends of the pixel electrode 111 and the ends of the optical adjustment layer. Two adjacent pixel electrodes 111 are electrically insulated by the insulating layer 104.

[0158] The protective layer 115 is provided on the light-emitting element, covers the end of the common electrode 114, and is in contact with the insulating layer 104 and the insulating layer 313 outside the end of the common electrode 114. Thereby, it is possible to suppress the entry of impurities into the transistor and the light-emitting element. In particular, it is preferable to use an inorganic film (or inorganic insulating film) with high barrier properties for the protective layer 115 and the insulating layer 31 3. Furthermore, it is preferable to use an inorganic insulating film with high barrier properties for the insulating layer 104 as well. At the end of the display device and its ​​​​​​​​​​ In the vicinity of , inorganic films (or inorganic insulating films) are laminated in contact with each other, making it difficult for impurities to enter from the outside, and suppressing deterioration of transistors and light-emitting elements.

[0159] The substrate 361 and the substrate 371 are bonded together by an adhesive layer 318. The space sealed by the substrate 361, the substrate 371, and the adhesive layer 318 is preferably filled with an inert gas such as nitrogen or argon, or a resin.

[0160] Materials such as glass, quartz, resin, metal, alloy, and semiconductor can be used for the substrate 361 and the substrate 371. The substrate 371 on the side where light is extracted from the light-emitting element uses a material that transmits the light. It is preferable to use a flexible substrate as the substrate 361 and the substrate 371.

[0161] For the adhesive layer, various curable adhesives such as photo-curable adhesives such as ultraviolet curable type, reaction curable adhesives, thermosetting adhesives, and anaerobic adhesives can be used. Also, an adhesive sheet or the like may be used.

[0162] The drive circuit 78 has a transistor 301. The display unit 71 has a transistor 303.

[0163] Each transistor has a gate, a gate insulating layer 311, a semiconductor layer, a back gate, a source, and a drain. The gate (lower gate) and the semiconductor layer overlap via the gate insulating layer 311. The back gate (upper gate) and the semiconductor layer overlap via the insulating layer 312 and the insulating layer 313. It is preferable that the two gates are electrically connected.

[0164] The drive circuit 78 and the display unit 71 may have different transistor structures. The drive circuit 7 8 and the display unit 71 may each have a plurality of types of transistors.

[0165] By arranging the transistors, wiring, etc. so as to overlap with the light-emitting region of the light-emitting element, the aperture ratio of the display unit 71 can be increased.

[0166] Of the insulating layer 312, the insulating layer 313, and the insulating layer 314, it is preferable to use a material in which impurities such as water or hydrogen hardly diffuse. It becomes possible to effectively suppress the diffusion of impurities from the outside into the transistor, and the reliability of the display device can be improved. The insulating layer 314 has a function as a planarization layer.

[0167] The insulating layer 367 has a function as an underlayer film. It is preferable to use a material in which impurities such as water or hydrogen hardly diffuse in the insulating layer 367.

[0168] The connection portion 306 has a wiring 307. The wiring 307 can be formed of the same material and in the same process as the source and drain of the transistor. The wiring 307 is electrically connected to an external input terminal that transmits a signal or potential from the outside to the drive circuit 78. Here, an example in which an FPC 74 is provided as an external input terminal is shown. The wiring 307 and the FPC 74 are electrically connected via a connection body 319.

[0169] As the connection body 319, various anisotropic conductive films (ACF: Anisotropic Conductive Film) and anisotropic conductive pastes (ACP: Anisotro pic Conductive Paste) etc. can be used.

[0170] Figure 6(A) shows a top view of the display device 10B. Figure 6(B) shows a cross-sectional view taken along the dash-dotted line between C1 and C2 shown in Figure 6(A).

[0171] The display device 10B shown in Figure 6(A) includes a display unit 71, a connection unit 75, and a drive circuit 78 and an FPC 74 is connected to the display device 10B.

[0172] The display unit 71 of the display device 10B has the same configuration as the display unit 71 of the display device 10A. Hereinafter the configuration of the connection unit 75 will be described in detail.

[0173] The connection unit 75 shown in Figures 6(A) and 6(B) is provided outside the display unit 71. The connection unit 75 is preferably provided so as to surround the four sides of the display unit 71. The connection unit 75 has a portion where the common electrode 114 is electrically connected to the conductive layer 357a and the conductive layer 356a, and a portion where the semi-transmissive layer 116 is electrically connected to the conductive layer 358, the conductive layer 357b, and the conductive layer 356b. In the connection unit 75, an insulating layer 104 has an opening outside the end of the EL layer 113, and in the opening, the common electrode 114 is connected to the conductive layer 357a. Then, a protective layer 115 has an opening outside the end of the common electrode 114, and in the opening the semi-transmissive layer 116 is connected to the conductive layer 358. That is, in the connection unit 75, a portion where the semi-transmissive layer 116 is electrically connected to the conductive layer 358, the conductive layer 357b, and the conductive layer 356b is provided outside the portion where the common electrode 114 is electrically connected to the conductive layer 357a and the conductive layer 356a. The conductive layers 356a and 356b are made of the same material and the same as the source and drain of the transistor, and outside the end of the common electrode 114, the semi-transmissive layer 116 is connected to the conductive layer 358. That is, in the connection unit 75, the semi-transmissive layer 116 is electrically connected to the conductive layer 358, the conductive layer 357b, and the conductive layer 356b outside the portion where the common electrode 114 is electrically connected to the conductive layer 357a and the conductive layer 356a. the semi-transmissive layer 116 is connected to the conductive layer 358. That is, in the connection unit 75, the semi-transmissive layer 116 is electrically connected to the conductive layer 358, the conductive layer 357b, and the conductive layer 356b outside the portion where the common electrode 114 is electrically connected to the conductive layer 357a and the conductive layer 356a. 4 is electrically connected to the conductive layer 357a and the conductive layer 356a, and a portion where the semi-transmissive layer 116 is electrically connected to the conductive layer 358, the conductive layer 357b, and the conductive layer 356b is provided outside the portion where the common electrode 114 is electrically connected to the conductive layer 357a and the conductive layer 356a. The semi-transmissive layer 116 is electrically connected to the conductive layer 358, the conductive layer 357b, and the conductive layer 356b. portion is provided.

[0174] The conductive layers 356a and 356b are made of the same material and the same The conductive layers 357a and 357b can be formed in the same process as the pixel electrode 111. The conductive layer 358 can be formed of the same material and in the same process as the common electrode 114. It can be formed using a single material and in the same process.

[0175] In this way, the conductive layer of the transistor or the light-emitting element can be formed using the same material and in the same process. The formed conductive layer is electrically connected to the common electrode 114, thereby reducing the resistance of the common electrode 114. Therefore, the voltage drop caused by the resistance can be suppressed, and the display unevenness of the display device can be reduced.

[0176] Furthermore, the conductive layer of the transistor or the light-emitting element is formed of the same material and in the same process. By electrically connecting the conductive layer and the semi-transparent layer 116, a constant potential is applied to the semi-transparent layer 116. 10 and the semi-transparent layer 116 can be configured to act as a shield to block noise. This allows the transistor to operate stably. When a touch sensor is provided on the semi-transmissive layer 116, the transistor and the touch sensor Both of these can operate stably.

[0177] The common electrode 114 and the semi-transparent layer 116 may be applied with the same potential, or may be applied with different potentials. The common electrode 114 and the semi-transparent layer 116 may be electrically connected. .

[0178] When the same potential is applied to the common electrode 114 and the semi-transparent layer 116, a power supply circuit can be shared. preferable.

[0179] As shown in FIG. 7, the common electrode 114 and the semi-transparent layer 116 are electrically connected to the same conductive layer. It may be. The connection part 75 shown in FIG. 7 does not have the conductive layers 356a and 356b, and is different from the connection part 75 shown in FIG. 6(B) in that it has the conductive layer 35 6.

[0180] FIG. 8 shows a cross-sectional view of the display device 15A. The top view of the display device 15A is the same as that of the display device 10A shown in FIG. 5(A). FIG. 8 corresponds to the cross-sectional view between the dashed-dotted lines B1 - B2 shown in FIG. 5(A). Note that the description of the same parts as those of the display device 10A may be omitted.

[0181] The display device 15A shown in FIG. 8 includes a substrate 361, an adhesive layer 363, an insulating layer 365, transistors 301, 303, wirings 307, an insulating layer 314, light-emitting elements 110W, light-emitting elements 110R, light-emitting elements 110G, light-emitting elements 110B, an insulating layer 104, a protective layer 115, a semi-transmissive layer 116, a protective layer 121, a coloring layer CFR, a coloring layer CFG, a coloring layer CFB, an adhesive layer 317, and a substrate 37 1, etc.

[0182] Each light-emitting element has a pixel electrode 111, an optical adjustment layer, an EL layer 113, and a common electrode 114. The optical adjustment layer shown in FIG. 8 is different from that in FIG. 5(B) in that it does not cover the side surface of the end of the pixel electrode 111. Each light-emitting element is covered by a protective layer 115.

[0183] The light-emitting elements 110R, 110G, and 110B respectively overlap the semi-transmissive layer 116 through the protective layer 11 5. The semi-transmissive layer 116 does not overlap with the light-emitting region of the light-emitting element 110W, and overlaps with the light-emitting regions of the light-emitting elements 110R, 110G, and 110B respectively.

[0184] The display device 15A shown in FIG. 8 has microcavities in sub-pixels that exhibit red, green, and blue light. ​​​​​​It has a light-emitting element to which a cavity structure is applied, and a sub-pixel that exhibits white light has a micro It has a light-emitting element to which a cavity structure is not applied. With such a configuration, the color extraction efficiency of both highly pure light and white light can be increased, and a display device with high display quality and low power consumption can be realized.

[0185] The substrate 361 and the substrate 371 are bonded together by an adhesive layer 317. Also, the substrate 3 61 and the insulating layer 365 are bonded together by an adhesive layer 363.

[0186] The display device 15A is configured by transferring transistors, light-emitting elements, etc. formed on a fabrication substrate onto the substrate 361 It is preferable that the substrate 361 and the substrate 371 each have flexibility. Thereby, the flexibility of the display device 15A can be increased.

[0187] The structure of the transistors 301 and 303 in the display device 15A is different from that of the display device 10A.

[0188] The transistors 301 and 303 shown in FIG. 8 have a back gate, a gate insulating layer 311, a semiconductor layer, a gate insulating layer, a gate, an insulating layer 315, a source, and a drain. The semiconductor layer has a channel formation region and a pair of low-resistance regions. The back gate (lower gate) and the ch annel formation region overlap via the gate insulating layer 311. The gate (upper gate) and the ch annel formation region overlap via the gate insulating layer. The source and the drain are each electrically connected to the low-resistance region through an opening provided in the insulating layer 315.

[0189] [Touch panel] In one aspect of the present invention, a display device equipped with a touch sensor (hereinafter also referred to as a touch panel) ) can be manufactured. With reference to FIGS. 9 to 11, a configuration example of the touch panel will be described.

[0190] There is no limitation on the detection element (also referred to as a sensor element) included in the touch panel of one aspect of the present invention. Various sensors capable of detecting the proximity or contact of a detected object such as a finger or a stylus can be applied as the detection element.

[0191] For example, as the sensor method, various methods such as a capacitance method, a resistive film method, a surface acoustic wave method, an infrared method , an optical method, and a pressure-sensitive method can be used.

[0192] In the present embodiment, a touch panel having a capacitance-type detection element will be described as an example. .

[0193] As the capacitance method, there are a surface capacitance method, a projected capacitance method, etc. Also, as the projected capacitance method, there are a self-capacitance method, a mutual-capacitance method, etc. Using the mutual-capacitance method is preferable because simultaneous multi-point detection becomes possible.

[0194] The touch panel of one aspect of the present invention can adopt various configurations, such as a configuration in which a separately manufactured display device and a detection element are bonded together, a configuration in which electrodes or the like constituting the detection element are provided on one or both of the substrate supporting the light-emitting element and the counter substrate.

[0195] FIG. 9(A) is a perspective schematic view of the touch panel 300. FIG. 9(B) is a perspective schematic view of FIG. 9(A) opened. For clarity, only typical components are shown. In FIG. 9 (B), some components (substrate 330, substrate 371, etc.) are outlined only by broken lines for clarity. It exists.

[0196] The touch panel 300 has an input device 310 and a display device 370, and these are provided overlapping each other. They are laminated.

[0197] The input device 310 has a substrate 330, electrodes 331, electrodes 332, a plurality of wirings 341, and a plurality of wirings 342. The FPC 350 is electrically connected to each of the plurality of wirings 341 and the plurality of wirings 342. An IC 351 is provided on the FPC 350.

[0198] The display device 370 has substrates 361 and 371 provided facing each other. The display device 370 has a display unit 71 and a drive circuit 78. Wirings 307 etc. are provided on the substrate 361. The FPC 74 is electrically connected to the wiring 307. An IC 374 is provided on the FPC 74.

[0199] The wiring 307 has a function of supplying signals and power to the display unit 71 and the drive circuit 78. The signals and power are input to the wiring 307 from the outside or the IC 374 via the FPC 74.

[0200] Fig. 10 shows an example of a cross-sectional view of the touch panel 300. In Fig. 10, the cross-sectional structures of regions including the display unit 71, the region including the FPC 74, and the region including the FPC 350 etc. are shown. In Fig. 10, the cross-sectional structure of the intersection portion 387 where the electrodes 331 and 332 of the touch sensor included in the display unit 71 intersect is shown.

[0201] The substrate 361 and the substrate 371 are bonded together by an adhesive layer 318. The substrate 371 and the substrate 330 are bonded together by an adhesive layer 396. Here, from the substrate 361 to the base ​​​​​​​​​​​Each layer up to the board 371 corresponds to the display device 370. Also, each layer from the substrate 330 to the electrode 334 corresponds to the input device 310. That is, it can be said that the adhesive layer 396 bonds the display device 370 and the input device 310. Alternatively, each layer from the substrate 330 to the substrate 371 corresponds to the input device 310, and it can also be said that the adhesive layer 318 bonds the display device 370 and the input device 310.

[0202] The configuration of the display device 370 shown in FIG. 10 is the same as that of the display device 10A shown in FIG. 5(B), so a detailed description is omitted.

[0203] The details of the input device 310 will be described. On the side of the substrate 371 of the substrate 330, an electrode 331 and an electrode 332 are provided. Here, an example in the case where the electrode 331 has the electrodes 333 and 334 is shown. As shown in the intersection 387 in FIG. 10, the electrode 332 and the electrode 333 are formed on the same plane. The insulating layer 395 is provided so as to cover the electrode 332 and the electrode 333. The electrode 334 is electrically connected to two electrodes 333 provided so as to sandwich the electrode 332 through an opening provided in the insulating layer 395. Near the end of the substrate 330 in the region, a connection portion 308 is provided. The connection portion 308 has a laminated structure of a wiring 342 and a conductive layer obtained by processing the same conductive layer as the electrode 3 34. The FPC 350 is electrically connected to the connection portion 308 through a continuation 309. Here, in the display portion 71, a semi-transmissive layer 116 is provided between the transistor 303 included in the display device 370 and the electrodes 331 and 332 included in the input device 310.

[0204] ​​​​It is preferable that a fixed potential is supplied to the semi-transmissive layer 116. Thereby, the semi-transmissive layer 116 serves as a shield for blocking noise, and the operations of the transistor and the touch sensor can be stabilized.

[0205] As shown in FIGS. 11(A), 11(B), 12(A), and 12(B), a touch panel may be manufactured by directly forming a touch sensor on a light-emitting element.

[0206] In FIG. 11(A), a substrate 361 and an insulating layer 365 are bonded together by an adhesive layer 363, and a transistor 303 is provided on the insulating layer 365. An insulating layer 314 is provided on the transistor 303, and a pixel electrode 111 is provided on the insulating layer 314. Through an opening in the insulating layer 314, a source or drain of the transistor 303 and the pixel electrode 111 are electrically connected. An optical adjustment layer is provided on the pixel electrode 111, and an insulating layer 104 is provided so as to cover an end portion of the pixel electrode 11 1 and the optical adjustment layer. An EL layer 113 is provided on the optical adjustment layer and the insulating layer 104, a common electrode 114 is provided on the EL layer 113, and a protective layer 115 is provided on the common electrode 114. A semi-transmissive layer 116 is provided on the protective layer 115. A protective layer 121 is provided on the protective layer 115 and the semi-transmissive layer 116, and a light-shielding layer BM and a coloring layer CFR are provided on the protective layer 121. A planarization layer 122 is provided on the protective layer 121, the light-shielding layer BM, and the coloring layer CFR, and a detection element TC is provided on the planarization layer 122. The detection element TC includes an electrode 331 on the planarization layer 122, an insulating layer 392 on the electrode 331, and an electrode 332 on the insulating layer 392. The detection element TC ​​​An insulating layer 391 is provided thereon, and the insulating layer 391 and the substrate 371 are bonded together by an adhesive layer 317. A circular polarizing plate 390 is provided on the substrate 371. Alternatively, without providing the substrate 371, the insulating layer 391 and the circular polarizing plate 390 may be directly bonded together by the adhesive layer 317. The display device of the present embodiment has a protective layer 115 (and a protective layer 121) with high barrier properties in contact with the light-emitting element, so that various components can be directly formed on the light-emitting element. In Fig. 11(A), an example is shown in which a colored layer, a light-shielding layer BM, and a detection element TC are provided on the light-emitting element. By forming a touch sensor on the light-emitting element, the display device can be made thinner and lighter compared to a configuration in which a separately formed touch sensor is attached to the display device. This makes it possible to enhance the flexibility of the display device and to reduce the thickness and weight of the electronic device incorporating the display device.

[0207] Among the conductive layers included in the input device 310 shown in Figs. 9 and 10, a material that transmits visible light is used for the conductive layer (such as electrodes 331 and 332) that overlaps with the light-emitting region of the light-emitting element. When the electrodes 331 and 332 are provided at positions that do not overlap with the light-emitting region of the light-emitting element, such as the detection element TC shown in Figs. 11(A) and 11(B), a material that blocks visible light can be used for the electrodes 331 and 332. Therefore, a material with a low resistivity, such as a metal, can be used for the electrodes 331 and 332. For example, it is preferable to use a metal mesh as the wiring and electrodes of the touch sensor. This reduces the resistance of the wiring and electrodes of the touch sensor. Thereby, the display device can be thinned and lightened. Consequently, the flexibility of the display device can be enhanced, and the thickness and weight of the electronic device incorporating the display device can be reduced.

[0208] Among the conductive layers included in the input device 310 shown in Figs. 9 and 10, a material that transmits visible light is used for the conductive layer (such as electrodes 331 and 332) that overlaps with the light-emitting region of the light-emitting element. When the electrodes 331 and 332 are provided at positions that do not overlap with the light-emitting region of the light-emitting element, such as the detection element TC shown in Figs. 11(A) and 11(B), a material that blocks visible light can be used for the electrodes 331 and 332.

[0209] Therefore, a material with a low resistivity, such as a metal, can be used for the electrodes 331 and 332. For example, it is preferable to use a metal mesh as the wiring and electrodes of the touch sensor. This reduces the resistance of the wiring and electrodes of the touch sensor. Thereby, the display device can be thinned and lightened. Consequently, the flexibility of the display device can be enhanced, and the thickness and weight of the electronic device incorporating the display device can be reduced. ​It can be lowered and is suitable as a touch sensor for a large display device. Incidentally, one Generally, metals are materials with high reflectivity, but they can be made darker by applying oxidation treatment or the like. Therefore, even when viewed from the display surface side, it is possible to suppress a decrease in visibility due to reflection of external light.

[0210] Further, the wiring and the electrodes may be formed by laminating a metal layer and a layer with low reflectivity (also referred to as a "dark layer"). Examples of the dark layer include a layer containing copper oxide, a layer containing copper chloride or tellurium chloride, etc. Also, the dark layer may be formed using metal fine particles such as Ag particles, Ag fibers, Cu particles, nano carbon particles such as carbon nanotubes (CNT), graphene, and conductive polymers such as PEDOT, polyaniline, polypyrrole, etc.

[0211] Also, by providing a circularly polarized plate 390, it is possible to suppress the electrodes 331 and 332 from being visually recognized by the user. Alternatively, by providing a light shielding layer BM on the display surface side rather than the electrodes 331 and 332, it is also possible to suppress the electrodes 331 and 332 from being visually recognized by the user. FIG. 11(B) shows an example in which the light shielding layer BM is provided on the insulating layer 391 instead of on the protective layer 121.

[0212] As shown in FIGS. 12(A) and 12(B), the semi-transmissive layer 116 may be used as an electrode of the touch sensor. In FIG. 12(A), an example is shown in which the semi-transmissive layer 116 and the electrode 331 on the planarization layer 122 are used as a pair of electrodes of the detection element TC. Also, in FIG. 12(B), an example is shown in which the semi-transmissive layer 116a and the semi-transmissive layer 116b are used as a pair of electrodes of the detection element TC.

[0213] In the cross-sectional structure shown in FIG. 12(A), the laminated structure from the substrate 361 to the planarization layer 122 and , the laminated structure from the insulating layer 391 to the substrate 371, are the same as the cross-sectional structure shown in FIG. 11(A) respectively. Note that an insulating material is used for the light-shielding layer BM. On the planarization layer 122, an electrode 331 is provided, and an insulating layer 391 is provided on the electrode 331.

[0214] In the cross-sectional structure shown in FIG. 12(B), the laminated structure from the substrate 361 to the protective layer 115 and, , the laminated structure from the insulating layer 391 to the substrate 371, are the same as the cross-sectional structure shown in FIG. 11(B) respectively. On the protective layer 115, semi-transmissive layers 116a and 116b are provided. On the semi-transmissive layers 116a and 116b, a protective layer 121 is provided. On the protective layer 121 a colored layer CFR is provided, and a planarization layer 122 is provided on the colored layer CFR. Openings reaching the semi-transmissive layer 116a are provided in the protective layer 121 and the planarization layer 122, and an electrode 331 is provided so as to cover the openings. Through the electrode 331, the two semi-transmissive layers 1 16a are electrically connected. An insulating layer 391 is provided on the electrode 331.

[0215] As shown in FIGS. 12(A) and 12(B), it is preferable that the semi-transmissive layer also serves as the electrode of the detection element TC, which can simplify the manufacturing process of the detection element TC. Also, the thickness of the touch panel can be reduced.

[0216] When the semi-transmissive layer is used as the electrode of the touch sensor, a configuration in which a pulse potential is supplied to the semi-transmissive layer or a configuration in which the semi-transmissive layer is electrically connected to the detection circuit (sense amplifier) can be applied.

[0217] ​​​​​Also, FIGS. 12(A) and 12(B) show an example in which the semi-transmissive layer is used as an electrode of a capacitive touch sensor, but the sensor type is not limited to this. For example, the semi-transmissive layer may be used as an electrode of a resistive film type touch sensor. Next, a transistor that can be used in the display device will be described. The structure of the transistor included in the display device is not particularly limited. For example, it may be a planar transistor, a staggered transistor, or an inverse staggered transistor. Also, it may have either a top gate structure or a bottom gate structure. Alternatively, gate electrodes may be provided above and below the channel.

[0218] [Transistor] Next, a transistor that can be used in the display device will be described.

[0219] The structure of the transistor included in the display device is not particularly limited. For example, it may be a planar transistor, a staggered transistor, or an inverse staggered transistor. Also, it may have either a top gate structure or a bottom gate structure. Alternatively, gate electrodes may be provided above and below the channel. FIGS. 13(A) and 13(B) show a configuration example of the transistor. Each transistor is provided between an insulating layer 141 and an insulating layer 208. The insulating layer 141 preferably functions as an underlying film. The insulating layer 208 preferably functions as a planarizing film. The transistor 220 shown in FIG. 13(A) is a bottom gate structure transistor having a metal oxide in the semiconductor layer 204. The metal oxide can function as an oxide semiconductor. It is preferable to use an oxide semiconductor for the semiconductor of the transistor. Using a semiconductor material having a wider bandgap and a lower carrier density than silicon is preferable because it can reduce the current in the off state of the transistor.

[0220] FIGS. 13(A) and 13(B) show a configuration example of the transistor. Each transistor is provided between an insulating layer 141 and an insulating layer 208. The insulating layer 141 preferably functions as an underlying film. The insulating layer 208 preferably functions as a planarizing film. The insulating layer 141 preferably functions as an underlying film. The insulating layer 208 preferably functions as a planarizing film. The insulating layer 141 preferably functions as an underlying film. The insulating layer 208 preferably functions as a planarizing film. .

[0221] The transistor 220 shown in FIG. 13(A) is a bottom gate structure transistor having a metal oxide in the semiconductor layer 204. The metal oxide can function as an oxide semiconductor. The metal oxide can function as an oxide semiconductor. It is preferable to use an oxide semiconductor for the semiconductor of the transistor. Using a semiconductor material having a wider bandgap and a lower carrier density than silicon is preferable because it can reduce the current in the off state of the transistor.

[0222] It is preferable to use an oxide semiconductor for the semiconductor of the transistor. Using a semiconductor material having a wider bandgap and a lower carrier density than silicon is preferable because it can reduce the current in the off state of the transistor. Using a semiconductor material having a wider bandgap and a lower carrier density than silicon is preferable because it can reduce the current in the off state of the transistor. Using a semiconductor material having a wider bandgap and a lower carrier density than silicon is preferable because it can reduce the current in the off state of the transistor.

[0223] The transistor 220 includes a conductive layer 201, an insulating layer 202, a conductive layer 203a, and a conductive layer 203b. The conductive layer 201 functions as a gate. The insulating layer 202 functions as a gate insulating layer. The semiconductor layer 204 overlaps with the conductive layer 2 01 via the insulating layer 202. The conductive layers 203a and 203b are each electrically connected to the semiconductor layer 204. The transistor 220 is preferably covered by an insulating layer 211 and an insulating layer 212. Various inorganic insulating films can be used for the insulating layer 211 and the insulating layer 212. In particular, an oxide insulating film is suitable for the insulating layer 211, and a nitride insulating film is suitable for the insulating layer 212.

[0224] The transistor 230 shown in FIG. 13(B) is a top-gate structure transistor having polysilicon in the semiconductor layer.

[0225] The transistor 230 includes a conductive layer 201, an insulating layer 202, a conductive layer 203a, a conductive layer 203b, a semiconductor layer, and an insulating layer 213. The conductive layer 201 functions as a gate. The insulating layer 202 functions as a gate insulating layer. The semiconductor layer has a channel formation region 214a and a pair of low-resistance regions 214b. The semiconductor layer may further have an LDD (Lightly Dop ed Drain) region. In FIG. 13(B), an example having an LDD region 214c between the channel formation region 21 4a and the low-resistance region 214b is shown. The channel formation region 21 4a overlaps with the conductive layer 201 via the insulating layer 202. The conductive layer 203a is connected to one of the pair of low-resistance regions 214b through an opening provided in the insulating layer 202 and the insulating layer 213. is electrically connected. Similarly, the conductive layer 203b is connected to the other of the pair of low-resistance regions 214b is electrically connected. For the insulating layer 213, various inorganic insulating films can be used. In particular, a nitride insulating film is suitable for the insulating layer 213.

[0226] [Metal oxide] For the semiconductor layer, it is preferable to use a metal oxide that functions as an oxide semiconductor. Hereinafter, the metal oxides applicable to the semiconductor layer will be described.

[0227] The metal oxide preferably contains at least indium or zinc. In particular, it preferably contains indium and zinc. In addition to these, it is preferable that aluminum, gallium, yttrium or tin, etc. are included. Also, it may contain one or a plurality of elements selected from boron, titanium, iron, nickel , germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium , tantalum, tungsten, or magnesium, etc. may be included.

[0228] Here, consider the case where the metal oxide is an In-M-Zn oxide having indium, element M, and zinc . Note that element M is aluminum, gallium, yttrium, or tin, etc. In addition, elements applicable to element M include boron, titanium, iron, nickel , germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium , tantalum, tungsten, magnesium, etc. However, as element M, there may be cases where a plurality of the above-described elements can be combined.

[0229] Note that in this specification etc., a metal oxide having nitrogen is also a metal oxide (metal oxi ​may be collectively referred to as (de). Further, a metal oxide having nitrogen may be referred to as a metal oxynitride (met al oxynitride). For example, zinc oxynitride (ZnON) Any metal oxide having nitrogen may be used for the semiconductor layer.

[0230] In addition, in this specification and the like, CAAC (c-axis aligned crystal ) and CAC (Cloud-Aligned Composite) may be described. Note that CAAC represents an example of a crystal structure, and CAC represents an example of a function or a material configuration.

[0231] For example, CAC (Cloud-Aligned Composite)-O S can be used for the semiconductor layer.

[0232] CAC-OS or CAC-metal oxide has a conductive function in part of the material and an insulating function in part of the material, and has a semiconductor function as a whole. . When CAC-OS or CAC-metal oxide is used for the active layer of a transistor , the conductive function is the function of flowing electrons (or holes) that serve as carriers , and the insulating function is the function of not flowing electrons that serve as carriers. By causing the conductive function and the insulating function to act complementarily, a switching function (On / Of f function) can be imparted to CAC-OS or CAC-metal oxide. In CAC-OS or CAC-metal oxide, by separating each function , both functions can be maximally enhanced.

[0233] In addition, CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-described conductive function, and the insulating region has the above-described insulating function. Also, in the material, the conductive region and the insulating region may be separated at the nanoparticle level. Further, the conductive region and the insulating region may be unevenly distributed in the material, respectively. Also, the conductive region may be observed with a blurred periphery and connected in a cloud-like shape.

[0234] In addition, in CAC-OS or CAC-metal oxide, the conductive region and the insu lating region may be dispersed in the material with sizes of 0.5 nm or more and 10 nm or less, preferably 0.5 nm or more and 3 nm or less, respectively.

[0235] Also, CAC-OS or CAC-metal oxide is composed of components having different band gaps. For example, CAC-OS or CAC-metal oxide is composed of a component having a wide band gap due to the insulating region and a component having a narrow band gap due to the conductive region. In this case of the structure, when carriers flow, carriers mainly flow in the component having a narrow band gap. Also, the component having a narrow band gap acts complementarily to the component having a wide band gap, and carriers also flow in the component having a wide band gap in conjunction with the component having a narrow band gap. Therefore, when the above CAC-OS or CAC-metal oxide is used for the channel formation region of a transistor, a high current driving force, that is, a large on-current, and a high field-effect mobility can be obtained in the on-state of the transistor.

[0236] ​​​​​ That is, CAC-OS or CAC-metal oxide can also be referred to as a matrix composite or a metal matrix composite. (matrix composite), or a metal matrix composite (metal matrix composite).

[0237] Oxide semiconductors (metal oxides) can be divided into single-crystalline oxide semiconductors and other non-single-crystalline oxide semiconductors. Examples of non-single-crystalline oxide semiconductors include CAAC-OS (c-axis aligned crystalline oxide semiconductor), polycrystalline oxide semiconductors, nc-OS (nanocrystalline oxide semiconductor), pseudo-amorphous oxide semiconductors (a-like OS: amorphous-like oxide semiconductor), and amorphous oxide semiconductors. CAAC-OS has c-axis orientation and a crystal structure in which a plurality of nanocrystals are connected and have strain in the a-b plane direction. Note that strain refers to a location where the lattice arrangement direction changes between a region with an aligned lattice arrangement and another region with an aligned lattice arrangement in the region where a plurality of nanocrystals are connected. xis aligned crystalline oxide semiconduc tor), polycrystalline oxide semiconductors, nc-OS (nanocrystalline oxi de semiconductor), pseudo-amorphous oxide semiconductors (a-like OS: amorphous-like oxide semiconductor), and amorphous oxide semiconductors, etc.

[0238] CAAC-OS has c-axis orientation and a crystal structure in which a plurality of nanocrystals are connected and have strain in the a-b plane direction. Note that strain refers to a location where the lattice arrangement direction changes between a region with an aligned lattice arrangement and another region with an aligned lattice arrangement in the region where a plurality of nanocrystals are connected. The strain refers to a location where the lattice arrangement direction changes between a region with an aligned lattice arrangement and another region with an aligned lattice arrangement in the region where a plurality of nanocrystals are connected. In the region where a plurality of nanocrystals are connected, between a region with an aligned lattice arrangement and another region with an aligned lattice arrangement, the lattice arrangement direction changes.

[0239] Nanocrystals are based on hexagons, but are not necessarily regular hexagons and may be non-regular hexagons. Also, in the strain, there may be lattice arrangements such as pentagons and heptagons. Note that in CAAC-OS, it is difficult to confirm a clear grain boundary (also called a grain boundary) even near the strain. That is, due to the strain of the lattice arrangement, the grain boundary is difficult to confirm. In CAAC-OS, even near the strain, it is difficult to confirm a clear grain boundary (also called a grain boundary). That is, due to the strain of the lattice arrangement, the grain boundary is difficult to confirm. That is, due to the strain of the lattice arrangement, the grain boundary It can be seen that the formation of is suppressed. This is because CAAC-OS can tolerate strain due to the fact that the oxygen atom arrangement is not dense in the a-b plane direction, or the interatomic bond distance changes when a metal element substitutes, etc.

[0240] Also, CAAC-OS tends to have a layered crystal structure (also referred to as a layered structure) in which a layer containing indium and oxygen (hereinafter, In layer) and a layer containing element M, zinc, and oxygen (hereinafter, (M,Zn) layer) are stacked. Note that indium and element M are mutually substitutable. When element M in the (M,Zn) layer substitutes indium, it can also be represented as an (In,M,Zn) layer. When indium in the In layer substitutes element M, it can also be represented as an (In,M) layer.

[0241] CAAC-OS is a highly crystalline metal oxide. On the other hand, since it is difficult to confirm distinct crystal grain boundaries in CAAC-OS, it can be said that a decrease in electron mobility due to crystal grain boundaries is unlikely to occur. Also, since the crystallinity of metal oxides may decrease due to the incorporation of impurities or the generation of defects, etc., CAAC-OS can also be said to be a metal oxide with few impurities and defects (oxygen vacancies (V :oxygen vacancy is also called).). Therefore, the physical properties of the metal oxide having CAAC-OS are stable. For this reason, the metal oxide having CAAC-OS is resistant to heat and has high reliability. O :oxygen va cancy). Therefore, it can also be said that CAAC-OS is a metal oxide with few impurities and defects (such as oxygen vacancies (V :oxygen vacancy is also called).). Therefore, the metal oxide having CAAC-OS is resistant to heat and has high reliability.

[0242] nc-OS has periodicity in the atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less). Also, nc-OS has different nano There is no regularity in the crystal orientation among the crystals. Therefore, no orientation is observed in the entire film. Thus, depending on the analysis method, nc-OS may not be distinguishable from a-like OS or amorphous oxide semiconductors.

[0243] Note that indium-gallium-zinc oxide (hereinafter referred to as IGZO), which is a type of metal oxide having indium, gallium, and zinc, may have a stable structure by forming the above-described nanocrystals. In particular, since IGZO tends to be difficult to grow crystals in the air, a crystal smaller than a large crystal (here, a crystal of several mm or several cm), for example, the above-described nanocrystal, may be structurally more stable.

[0244] a-like OS is a metal oxide having a structure between nc-OS and amorphous oxide semiconductors. a-like OS has a loose or low-density region. That is, a-like OS has lower crystallinity than nc-OS and CAAC-OS.

[0245] Oxide semiconductors (metal oxides) have various structures and each has different characteristics. The oxide semiconductor according to one aspect of the present invention may have two or more of amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, nc-OS, and CAAC-OS.

[0246] The metal oxide film that functions as a semiconductor layer can be formed using either one or both of an inert gas and an oxygen gas. Note that there is no particular limitation on the flow rate ratio (oxygen partial pressure) of oxygen during the formation of the metal oxide film. However, in the case of obtaining a transistor having a high field-effect mobility, the flow rate ratio (oxygen partial pressure) of oxygen during the formation of the metal oxide film is 0% or more and 3 ​ Preferably, it is 0% or less, more preferably 5% or more and 30% or less, and even more preferably 7% or more and 15% or less.

[0247] The metal oxide preferably has an energy gap of 2 eV or more, more preferably 2.5 eV or more or more, and even more preferably 3 eV or more. Thus, by using a metal oxide with a wide energy gap, the off-current of the transistor can be reduced.

[0248] The metal oxide film can be formed by sputtering. In addition, the PLD method, PECVD method, thermal CVD method, ALD method, vacuum evaporation method, etc. may also be used.

[0249] In addition, examples of materials that can be used for various conductive layers constituting the display device include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or alloys mainly composed of these. In addition, films containing these materials can be used as single layers or in a laminated structure. For example, a single-layer structure of an aluminum film containing silicon, a two-layer structure in which an aluminum film is laminated on a titanium film, a two-layer structure in which an aluminum film is laminated on a tungsten film, a two-layer structure in which a copper film is laminated on a copper-magnesium-aluminum alloy film, a two-layer structure in which a copper film is laminated on a titanium film, a two-layer structure in which a copper film is laminated on a tungsten film, a three-layer structure in which a titanium film or a titanium nitride film is formed, and an aluminum film or a copper film is laminated thereon, and then a titanium film or a titanium nitride film is formed thereon, a three-layer structure in which a molybdenum film or a molybdenum nitride film is formed, and an aluminum film is laminated thereon, A three-layer structure is formed by laminating a niobium film or a copper film, and further forming a molybdenum film or a molybdenum nitride film thereon. Note that oxides such as indium oxide, tin oxide, or zinc oxide may be used. Also, using copper containing manganese is preferable because it enhances the controllability of the shape by etching. In addition, materials that can be used for various insulating layers constituting the display device include resins such as acrylic, epoxy, and silicone, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide. As described above, the display device of the present embodiment has both a light-emitting element to which a microcavity structure is applied and a light-emitting element to which a microcavity structure is not applied. Accordingly, the light extraction efficiency of both light with high color purity and white light can be enhanced.

[0250] Therefore, a display device with high display quality and low power consumption can be realized. The present embodiment can be appropriately combined with other embodiments and examples. Also, in this specification, when multiple configuration examples are shown in one embodiment, the configuration examples can be appropriately combined.

[0251] (Embodiment 2) In this embodiment, a display device according to an aspect of the present invention will be described with reference to FIGS. 14 to 18. FIG. 14 shows a cross-sectional view of a display device 200A.

[0252] The display device 200A includes a light-emitting element 110W, a light-emitting element 110R, a light-emitting element 110G, a capacitor element

[0253] (Embodiment 2) In this embodiment, a display device according to an aspect of the present invention will be described with reference to FIGS. 14 to 18.

[0254] FIG. 14 shows a cross-sectional view of the display device 200A.

[0255] The display device 200A includes a light-emitting element 110W, a light-emitting element 110R, a light-emitting element 110G, a capacitor element It has a child 440, a transistor 410, etc.

[0256] The configurations of the light-emitting elements 110W, 110R, and 110G are the same as those in FIG. 4(A). Therefore, a detailed description is omitted. In this embodiment, an inorganic insulating film is used for the insulating layer 104. An example is shown. On the protective layer 121, a coloring layer CFR overlapping the light-emitting region of the light-emitting element 110R and a coloring layer CFG overlapping the light-emitting region of the light-emitting element 110G are provided. And a coloring layer CFG overlapping the light-emitting region of the light-emitting element 110G are provided.

[0257] The display device of this embodiment has both a light-emitting element to which a microcavity structure is applied and a light-emitting element to which a microcavity structure is not applied. Thereby, it is possible to improve the light extraction efficiency of both high-purity color light and white light. Therefore, it is possible to realize a display device with high display quality and low power consumption. Both high-purity color light and white light can be improved. Therefore, it is possible to realize a display device with high display quality and low power consumption. The display device of this embodiment has both a light-emitting element to which a microcavity structure is applied and a light-emitting element to which a microcavity structure is not applied. Thereby, it is possible to improve the light extraction efficiency of both high-purity color light and white light. Therefore, it is possible to realize a display device with high display quality and low power consumption. The display device of this embodiment has both a light-emitting element to which a microcavity structure is applied and a light-emitting element to which a microcavity structure is not applied. Thereby, it is possible to improve the light extraction efficiency of both high-purity color light and white light. Therefore, it is possible to realize a display device with high display quality and low power consumption.

[0258] In this embodiment, the substrate 101 is a substrate provided with a semiconductor circuit that functions as a circuit for driving a light-emitting element (also referred to as a pixel circuit) and a driving circuit for driving the pixel circuit (one or both of a gate driver and a source driver). In this embodiment, the substrate 101 is a substrate provided with a semiconductor circuit that functions as a circuit for driving a light-emitting element (also referred to as a pixel circuit) and a driving circuit for driving the pixel circuit (one or both of a gate driver and a source driver). In this embodiment, the substrate 101 is a substrate provided with a semiconductor circuit that functions as a circuit for driving a light-emitting element (also referred to as a pixel circuit) and a driving circuit for driving the pixel circuit (one or both of a gate driver and a source driver).

[0259] The transistor 410 is a transistor having a channel formation region on the substrate 401. As the substrate 401, for example, a semiconductor substrate such as a single crystal silicon substrate can be used. The transistor 410 has a part of the substrate 401, a conductive layer 411, a pair of low-resistance regions 412, an insulating layer 413, an insulating layer 414, etc. The conductive layer 411 functions as a gate electrode. The insulating layer 413 is located between the substrate 401 and the conductive layer 411 and functions as a gate insulating layer. The transistor 410 has a part of the substrate 401, a conductive layer 411, a pair of low-resistance regions 412, an insulating layer 413, an insulating layer 414, etc. The conductive layer 411 functions as a gate electrode. The insulating layer 413 is located between the substrate 401 and the conductive layer 411 and functions as a gate insulating layer. The transistor 410 has a part of the substrate 401, a conductive layer 411, a pair of low-resistance regions 412, an insulating layer 413, an insulating layer 414, etc. The conductive layer 411 functions as a gate electrode. The insulating layer 413 is located between the substrate 401 and the conductive layer 411 and functions as a gate insulating layer. The insulating layer 413 is located between the substrate 401 and the conductive layer 411 and functions as a gate insulating layer. The pair of low-resistance regions 412 are regions in the substrate 401 doped with impurities, and each functions as a source or a drain. The insulating layer 414 is provided to cover the side surface of the conductive layer 411 and each transistor 410 is electrically separated by the element isolation region 419 .

[0260] An insulating layer 461 is provided to cover the transistor 410, and a capacitive element 440 is provided on the insulating layer 461.

[0261] The capacitive element 440 has a conductive layer 441, a conductive layer 442, and an insulating layer 44 3 located therebetween. The conductive layer 441 functions as one electrode of the capacitive element 440, the conductive layer 442 functions as the other electrode of the capacitive element 440, and the insulating layer 443 functions as the dielectric of the capacitive element 440 .

[0262] The conductive layer 441 is provided on the insulating layer 461 and is electrically connected to one of the source or drain of the transistor 410 by a plug 471 embedded in the insulating layer 461. The insulating layer 443 is provided to cover the conductive layer 441. The conductive layer 442 is provided in a region overlapping the conductive layer 441 via the insulating layer 443.

[0263] An insulating layer 492 is provided to cover the capacitive element 440, and a light-emitting element 110W , a light-emitting element 110R, a light-emitting element 110G, etc. are provided on the insulating layer 492.

[0264] The display device 200A has a substrate 371 on the viewing side. The substrate 371 and the substrate 401 are bonded by an adhesive layer 317. As the substrate 371, a substrate having transparency to visible light, such as a glass substrate, a quartz substrate, a sapphire substrate, or a plastic substrate, is used. ​ It can be achieved.

[0265] With such a configuration, a display device with extremely high definition and high display quality can be realized.

[0266] Fig. 15 shows a cross-sectional view of the display device 200B.

[0267] The display device 200B is different from the display device 200A shown in Fig. 14 in that it does not have the transistor 410 but has the transistor 420, and the plug 471 has the conductive layers 471a and 471b. 0A.

[0268] The transistor 420 is a transistor having a metal oxide in the channel formation region. The metal oxide can function as an oxide semiconductor.

[0269] The transistor 420 includes a semiconductor layer 421, a metal oxide layer 422, an insulating layer 423, a conductive layer 4 24, a conductive layer 425, an insulating layer 426, a conductive layer 427, etc.

[0270] As the substrate 401a on which the transistor 420 is provided, an insulating substrate or a semiconductor substrate can be used.

[0271] An insulating layer 432 is provided on the substrate 401a. The insulating layer 432 functions as a barrier layer to prevent impurities such as water and hydrogen from diffusing from the substrate 401a into the transistor 420, and to prevent oxygen from desorbing from the semiconductor layer 421 to the insulating layer 432 side. As the insulating layer 432, for example, a film such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film, in which hydrogen and oxygen diffuse less easily than in a silicon oxide film, can be used.

[0272] ​​A conductive layer 427 is provided over the insulating layer 432, and an insulating layer 426 is provided to cover the conductive layer 427. The conductive layer 427 serves as a first gate electrode of the transistor 420 and is an insulating A portion of layer 426 functions as a first gate insulating layer. It is preferable to use an oxide insulating film such as a silicon oxide film for the portion in contact with the base layer 421. The upper surface of the insulating layer 426 is preferably planarized.

[0273] The semiconductor layer 421 is provided on the insulating layer 426. The semiconductor layer 421 has a semiconductor characteristic. It is preferable that the semiconductor device has a metal oxide (also referred to as an oxide semiconductor) film.

[0274] The pair of conductive layers 425 is provided on and in contact with the semiconductor layer 421 and serves as a source electrode and a drain electrode. The metal oxide layer 422 is disposed between a pair of conductive layers 425 and functions as a semiconductor layer. The metal oxide layer 422 is provided to cover the upper surface of the semiconductor layer 421. On the metal oxide layer 422, a second gate insulating film is preferably formed. A conductive layer 424 serving as a second gate electrode and an insulating layer 423 serving as a second gate electrode are stacked. It is set up as such.

[0275] In addition, an insulating layer 428 is provided to cover the transistor 420, and an insulating layer 4 The insulating layer 428 is provided to prevent water and other substances from entering the transistor 420 through the insulating layer 461 and the like. Impurities such as hydrogen are diffused, and oxygen is released from the semiconductor layer 421 to the insulating layer 428 side. The insulating layer 428 functions as a barrier layer to prevent the above-described insulating layer 432. Such an insulating film can be used.

[0276] The plug 471 electrically connected to the conductive layer 425 is designed to be embedded in the insulating layer 461. Here, the plug 471 is formed on the side of the opening of the insulating layer 461 and the conductive layer 425. A conductive layer 471a covers a part of the upper surface of the conductive layer 471a, and a conductive layer 471b contacts the upper surface of the conductive layer 471a. In this case, the conductive layer 471a is preferably formed of a material that is difficult for hydrogen and oxygen to diffuse into. It is preferable to use a conductive material having a low resistance.

[0277] FIG. 16 shows a cross-sectional view of the display device 200C.

[0278] The display device 200C includes a transistor 410 having a channel formation region in a substrate 401, A transistor 420 having a metal oxide in a channel formation region is stacked.

[0279] An insulating layer 461 is provided to cover the transistor 410, and a conductive layer 451 is provided over the insulating layer 461. In addition, an insulating layer 462 is provided to cover the conductive layer 451. A conductive layer 452 is provided. The conductive layers 451 and 452 are each used as a wiring. In addition, the insulating layer 463 and the insulating layer 432 are provided to cover the conductive layer 452. The transistor 420 is provided on the insulating layer 432. An insulating layer 465 is provided, and a capacitor 440 is provided on the insulating layer 465. 40 and the transistor 420 are electrically connected by a plug 474 .

[0280] The transistor 420 can be used as a transistor that constitutes a pixel circuit. The transistor 410 may be a transistor that configures a pixel circuit or a transistor that drives the pixel circuit. A transistor that constitutes a driving circuit (either a gate driver or a source driver or both) for The transistor 410 and the transistor 420 can be used as a can be used as a transistor that constitutes various circuits such as an arithmetic circuit and a memory circuit. do.

[0281] By adopting such a configuration, not only the pixel circuit but also the driving circuit and the like can be formed directly under the light emitting element. Therefore, the display device can be made smaller than when the driver circuit is provided outside the display unit. In addition, a display device with a narrow frame (a narrow non-display area) can be realized. do.

[0282] FIG. 17 shows a cross-sectional view of a display device 200D.

[0283] The display device 200D includes a transistor 410 having a channel formation region in a substrate 401, A transistor 430 having a metal oxide in a channel forming region and a transistor 431 having a metal oxide in a channel forming region In other words, the display device 200D has a stack of a transistor 420 having a ZnO layer and a transistor 420 having a ZnO layer. The display device is characterized in that two transistors each having a metal oxide in the channel formation region are stacked. This is different from position 200C.

[0284] Transistor 430 is identical to transistor 420, except that it does not have a first gate electrode. The transistor 430 has a first gate electrode. This is also fine.

[0285] An insulating layer 463 and an insulating layer 431 are provided to cover the conductive layer 452, and a transistor is formed on the insulating layer 431. The transistor 430 and the conductive layer 452 are connected to a plug 47. 3, the conductive layer 453, and the plug 472 are electrically connected to each other. An insulating layer 464 and an insulating layer 432 are provided to cover 53, and a transistor is provided on the insulating layer 432. 420 is provided.

[0286] For example, the transistor 420 functions as a transistor for controlling the current flowing through the light-emitting element. Also, the transistor 430 functions as a selection transistor for controlling the selection state of the pixel. Also, the transistor 410 functions as a transistor that constitutes a driving circuit for driving the pixel. By stacking three or more transistors in this way, the occupied area of the pixel can be further reduced, and a high-definition display device can be realized.

[0287]

[0288]

[0289] FIG. 18(A) and FIG. 18(B) show perspective views of the display module.

[0289] The display module 480 shown in FIG. 18(A) includes a display device 400 and an FPC 490. As the display device 400, any of the display devices 200A to 200D shown in FIGS. 14 to 17 can be applied.

[0290] The display module 480 includes a substrate 401 and a substrate 371. The display module 480 has a display unit 481.

[0291] FIG. 18(B) shows a perspective view schematically showing the configuration on the substrate 401 side. The display unit 481 has a configuration in which a circuit unit 482, a pixel circuit unit 483, and a pixel unit 484 are stacked in this order on the substrate 401. Also, outside the display unit 481, a terminal unit 485 for connecting to the FPC 490 is provided on the substrate 401. The terminal unit 485 and the circuit unit 482 are connected by a plurality of It is electrically connected by a wiring portion 486 composed of a number of wirings.

[0292] The pixel portion 484 has a plurality of pixels 484a arranged in a matrix. On the right side of FIG. 18(B), an enlarged view of one pixel 484a is shown. The pixel 484a has sub-pixels of four colors: R (red), G (green

[0293] The pixel circuit portion 483 has a plurality of pixel circuits 483a arranged in a matrix. One pixel circuit 483a is a circuit that controls the light emission of the four sub-pixels that one pixel 484a has. One pixel circuit 483a may be configured such that four circuits that control the light emission of one sub-pixel are provided. For example, the pixel circuit 483a may be configured to have at least one selection transistor, one current control transistor (driving transistor), and a capacitive element. At this time, a gate signal is input to the gate of the selection transistor, and a source signal is input to one of the source or drain. Thus, an active matrix type display

[0294] The circuit portion 482 has a circuit that drives each pixel circuit 483a of the pixel circuit portion 483. For example, it preferably has one or both of a gate driver and a source driver. Alternatively, it may have an arithmetic circuit, a memory

[0295] The FPC 490 functions as a wiring for supplying a video signal and a power supply potential from the outside to the circuit portion 482. Also, an IC may be mounted

[0296] The display module 480 can be configured such that the pixel circuit section 483, the circuit section 482, etc. are stacked below the pixel section 484. Therefore, the aperture ratio (effective display area ratio) of the display section 481 can be made extremely high. For example, the aperture ratio of the display section 481 can be 40% or more and less than 100%, preferably 50% or more and 95% or less, more preferably 60% or more and 95% or less. Also, the pixels 484a can be arranged extremely densely, and the definition of the display section 481 can be made extremely high. For example, in the display section 481, there are 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, even more preferably 60 00 ppi or more, and 20000 ppi or less, or 30000 ppi or less, and it is preferable that the pixels 484a are arranged with such definition.

[0297] The high-definition display module 480 can be suitably used for devices for VR (Virtual Reality) such as head-mounted displays, or devices for AR (Augmented Reality) in the form of glasses. The high-definition display module 480 can also be used for devices that view the display section through lenses. Even when the pixels of the display section enlarged by the lenses are difficult for the user to view, a display with a high sense of immersion can be performed. Also, the display module 48 0 can be suitably used for electronic devices having a relatively small display section. For example, it can be suitably used for the display section of wearable electronic devices such as smartwatches.

[0298] This embodiment can be appropriately combined with other embodiments.

[0299] (Embodiment 3) In this embodiment, a display device according to an aspect of the present invention will be described with reference to FIGS. 19 and 20. This will be done.

[0300] FIG. 19(A) shows a block diagram of a pixel. The pixel of this embodiment has a memory in addition to a switching transistor (Switching Tr), a driving transistor (Driving Tr), and a light-emitting element (OLED). In addition to the light-emitting element (OLED), it has a memory (Memory). Data DATA_W is supplied to the memory. By supplying DATA_W in addition to the display data DATA to the pixel, the current flowing through the light-emitting element increases, and the display device can express high brightness.

[0301] When the potential of the data DATA_W is V w and the potential of the display data DATA is V data

[0302] w g w data g data

[0303]

[0304]

[0305]

[0306] g data g data g data A larger voltage is applied to V g than V data

[0305]

[0306] FIG. 19(B) shows a specific circuit diagram of the pixel.The pixel shown in Fig. 19(B) includes transistor M1, transistor M2, transistor M3, transistor M4, transistor M5, capacitor element Cs, capacitor element Cw, and light-emitting element 12 4.

[0307] One of the source or drain of transistor M1 is electrically connected to one electrode of capacitor element Cw. The other electrode of capacitor element Cw is electrically connected to one of the source or drain of transistor M4. One of the source or drain of transistor M4 is electrically connected to the gate of transistor M2. The gate of transistor M2 is electrically connected to one electrode of capacitor element Cs. The other electrode of capacitor element Cs is electrically connected to one of the source or drain of transistor M2. One of the source or drain of transistor M2 is electrically connected to one of the source or drain of transistor M5. One of the source or drain of transistor M5 is electrically connected to one of the source or drain of transistor M3. The other of the source or drain of transistor M5 is electrically connected to one electrode of light-emitting element 124. Each transistor shown in Fig. 19(B) has a back gate electrically connected to the gate, but the connection of the back gate is not limited to this. Also, a back gate may not be provided for the transistor.

[0308] Here, the node to which the other electrode of capacitor element Cw, one of the source or drain of transistor M4, the gate of transistor M2, and one electrode of capacitor element Cs are connected is defined as node NM. Also, the node to which the other of the source or drain of transistor M5 and one electrode of light-emitting element 124 are connected is defined as node NA.

[0309] The gate of transistor M1 is electrically connected to wiring G1. The gate of transistor M3 is electrically connected to wiring G1. The gate of transistor M4 is electrically connected to wiring G2. The gate of transistor M5 is electrically connected to wiring G3. The other of the source or drain of transistor M1 is electrically connected to wiring DATA. The other of the source or drain of transistor M3 is electrically connected to wiring V0. The other of the source or drain of transistor M4 is electrically connected to wiring DATA_W.

[0310] The other of the source or drain of transistor M2 is electrically connected to power line 127 (high potential). The other electrode of light-emitting element 124 is electrically connected to common wiring 129. In addition, any potential can be supplied to common wiring 129.

[0311] Wiring G1, G2, and G3 can function as signal lines for controlling the operation of the transistors. Wiring DATA can function as a signal line for supplying an image signal to the pixel. Also, wiring DATA_W can function as a signal line for writing data to memory circuit MEM. Wiring DATA_W can function as a signal line for supplying a correction signal to the pixel. Wiring V0 functions as a monitor line for obtaining the electrical characteristics of transistor M4. Also, by supplying a specific potential from wiring V0 to one electrode of capacitor element Cs via transistor M3, the writing of the image signal can be stabilized.

[0312] ​Transistor M2, transistor M4, and capacitor element Cw constitute the memory circuit MEM. . Node NM is a memory node, and by turning on transistor M4, the signal supplied to wiring DATA _W can be written to node NM. By using a transistor with an extremely low off-current for transistor M4, the potential of node NM can be held for a long time. .

[0313] For transistor M4, for example, a transistor using a metal oxide in the channel formation region ( hereinafter, OS transistor) can be used. Thereby, the off current of transistor M4 can be made extremely low, and the potential of node NM can be held for a long time. At this time, it is preferable to use an OS transistor also for other transistors constituting the pixel. Specific examples of the metal oxide can be referred to in Embodiment 1.

[0314] Since the OS transistor has a large energy gap, it exhibits extremely low off-current characteristics. In addition, the OS transistor has characteristics different from those of a transistor having Si in the channel formation region (hereinafter, Si transistor) such as no occurrence of impact ionization, avalanche breakdown, and short-channel effect, and a highly reliable circuit can be formed.

[0315] Further, an Si transistor may be applied to transistor M4. At this time, it is preferable to use an Si transistor also for other transistors constituting the pixel.

[0316] Examples of the Si transistor include a transistor having amorphous silicon, a transistor having crystalline silicon (typically, low-temperature polysilicon), and a transistor having single-crystalline silicon. con (typically, low-temperature polysilicon), and a transistor having single-crystalline silicon. Transistors and the like.

[0317] Furthermore, one pixel may have both an OS transistor and a Si transistor. .

[0318] In the pixel, the signal written to the node NM is the image signal supplied from the wiring DATA. The transistor M1 is capacitively coupled to the pixel The transistor M5 can have a function of controlling the light emission of the light emitting element 124. The switch can function as a switch that controls the

[0319] For example, if a signal is written to node NM from wiring DATA_W, the threshold voltage of transistor M2 Voltage (V th ), transistor M2 will be turned on before the image signal is written. Therefore, the transistor M5 is provided to After the potential of the transistor M5 is determined, the transistor M5 is turned on to cause the light emitting element 124 to emit light. is preferred.

[0320] In other words, if a desired correction signal is stored in the node NM, the correction signal is applied to the supplied image signal. Note that the correction signal may be attenuated by elements on the transmission path. Therefore, it is preferable to generate the signal taking this attenuation into consideration.

[0321] Using the timing charts shown in FIG. 20(A) and FIG. 20(B), the image shown in FIG. The operation of the element will now be described in detail. Note that the correction signal (Vp) supplied to the wiring DATA_W is Any negative signal can be used, but the present description will be given with a positive signal provided. Also, in the following description, a high potential is represented by "H" and a low potential is represented by "L".

[0322] First, an operation of writing a correction signal (Vp) to node NM will be described with reference to FIG. 20(A). This operation may be performed for each frame, or at least once before supplying the image signal. Also, a refresh operation may be appropriately performed to rewrite the same correction signal to node NM.

[0323] When the potential of wiring G1 is "H", the potential of wiring G2 is "L", the potential of wiring G3 is "L", and the potential of wiring DATA is "L" at time T1, transistor M1 conducts, and the potential of the other electrode of capacitive element Cw becomes "L".

[0324] This operation is a reset operation for performing a subsequent capacitive coupling operation. Also, before time T1, the light emission operation of light emitting element 124 in the previous frame is being performed. However, due to the change in the potential of node NM and the change in the current flowing through light emitting element 124 by the above reset operation, it is preferable to turn off transistor M5 to stop the light emission of light emitting element 124.

[0325] When the potential of wiring G1 is "H", the potential of wiring G2 is "H", the potential of wiring G3 is "L", and the potential of wiring DATA is "L" at time T2, transistor M4 conducts, and the potential of wiring DATA_W (correction signal (Vp)) is written to node NM.

[0326] When the potential of wiring G1 is "H", the potential of wiring G2 is "L", the potential of wiring G3 is "L", and the potential of wiring DATA is "L" at time T3, transistor M4 turns off, and the correction signal (Vp) is held at node NM.

[0327] At time T4, when the potential of wiring G1 is "L", the potential of wiring G2 is "L", and the potential of wiring G3 is "L" , if the potential of wiring DATA is "L", transistor M1 becomes non-conductive, and the writing operation of the correction signal ( Vp) ends.

[0328] Next, the correction operation of the image signal (Vs) and the operation of causing the light-emitting element 124 to emit light will be described with reference to FIG. 20(B). The operation will be described.

[0329] At time T11, when the potential of wiring G1 is "H", the potential of wiring G2 is "L", the potential of wiring G3 is "L ", and the potential of wiring DATA_W is "L", transistor M1 becomes conductive, and the potential of wiring DATA is added to the potential of node NM by the capacitive coupling of capacitor element C w. That is, node NM becomes the potential (Vs + Vp) obtained by adding the correction signal (Vp) to the image signal (Vs).

[0330] At time T12, when the potential of wiring G1 is "L", the potential of wiring G2 is "L", the potential of wiring G3 is "L ", and the potential of wiring DATA_W is "L", transistor M1 becomes non-conductive, and the potential of node NM is determined to be Vs + Vp.

[0331] At time T13, when the potential of wiring G1 is "L", the potential of wiring G2 is "L", and the potential of wiring G3 is " H", and the potential of wiring DATA_W is "L", transistor M5 becomes conductive, and the potential of node NA becomes Vs + Vp, and the light-emitting element 124 emits light. Strictly speaking, the potential of node NA is a value lower by the threshold voltage (V th ) of transistor M2 from Vs + Vp, but here, V th is assumed to be a value small enough to be negligible.

[0332] The above is the correction operation of the image signal (Vs) and the operation of causing the light-emitting element 124 to emit light. Note that the writing operation of the correction signal (Vp) and the input operation of the image signal (Vs) described above may be continuous but it is preferable to perform the input operation of the image signal (Vs) after writing the correction signal (Vp) to all the pixels. In one aspect of the present invention, since the same image signal can be supplied to a plurality of pixels simultaneously the operation speed can be improved by writing the correction signal (Vp) to all the pixels first.

[0333] As described above, by causing the light-emitting element to emit light using the image signal and the correction signal, the current flowing through the light-emitting element can be increased, and high luminance can be expressed. Since a voltage equal to or higher than the output voltage of the source driver can be applied as the gate voltage of the driving transistor, the power consumption of the source driver can be reduced.

[0334] This embodiment can be appropriately combined with other embodiments and examples.

[0335] (Embodiment 4) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to FIGS. 21 to 23.

[0336] The electronic device of this embodiment has a display device according to one aspect of the present invention in a display unit. The display device according to one aspect of the present invention has high display quality and low power consumption. Further, the display device according to one aspect of the present invention is easy to achieve high definition and large size. Therefore, it can be used in the display units of various electronic devices.

[0337] In the display unit of the electronic device of this embodiment, for example, full high vision, 4K2K, 8K4K, ​​​​​​​​​It is possible to display video having a resolution of 16K, 8K, or higher.

[0338] Examples of the electronic device include a television device, a desktop or notebook personal computer, a monitor for a computer, a digital signage, a pachinko machine, any large game machine, etc., which are electronic devices equipped with a relatively large screen, as well as a digital camera, a digital video camera, a digital photo frame, a mobile phone, a portable game machine, a portable information terminal, and an audio playback device, etc.

[0339] The electronic device of the present embodiment can be incorporated along the inner wall or outer wall of a house or building, or along the curved surface of the interior or exterior of an automobile.

[0340] The electronic device of the present embodiment may have an antenna. By receiving a signal with the antenna, it is possible to display video, information, etc. on the display unit. Further, when the electronic device has an antenna and a secondary battery, the antenna may be used for non-contact power transmission.

[0341] The electronic device of the present embodiment may have a sensor (including a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0342] The electronic device of the present embodiment can have various functions. For example, functions of displaying various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a calendar, a function of displaying a date or time, etc., and executing various software (programs). functions, a wireless communication function, and a function of reading programs or data recorded on a recording medium and the like can be included.

[0343] FIG. 21(A) shows an example of a television apparatus. The television apparatus 7100 has a housing 71 01 in which a display unit 7000 is incorporated. Here, a configuration is shown in which the housing 71 01 is supported by a stand 7103.

[0344] The display device according to an aspect of the present invention can be applied to the display unit 7000.

[0345] The operation of the television apparatus 7100 shown in FIG. 21(A) can be performed by operation switches provided in the housing 7101 or by a separate remote control operation unit 7111. Alternatively, the display unit 700 0 may be provided with a touch sensor, and the television apparatus 7100 may be operated by touching the display unit 7000 with a finger or the like. The remote control operation unit 7111 may have a display unit that displays information output from the remote control operation unit 71 11. Channel and volume operations can be performed by operation keys or a touch panel provided in the remote control operation unit 7111 , and the video displayed on the display unit 7000 can be operated.

[0346] Note that the television apparatus 7100 has a configuration including a receiver and a modem. The receiver can receive general television broadcasts. Also, by connecting to a communication network by wire or wirelessly via a modem, one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers) information communication can also be performed.

[0347] Fig. 21(B) shows an example of a notebook personal computer. The notebook personal computer 7200 has a housing 7211, a keyboard 7212, a pointing device 7 213, an external connection port 7214, etc. A display unit 7000 is incorporated in the housing 7211.

[0348] The display device according to one aspect of the present invention can be applied to the display unit 7000.

[0349] Figs. 21(C) and 21(D) show an example of a digital signage.

[0350] The digital signage 7300 shown in Fig. 21(C) has a housing 7301, a display unit 7000, and a speaker 7303, etc. Further, it can have an LED lamp, operation keys (including a power switch or also an operation switch), connection terminals, various sensors, a microphone, etc.

[0351] Fig. 21(D) shows a digital signage 7400 attached to a columnar pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0352] In Figs. 21(C) and 21(D), the display device according to one aspect of the present invention can be applied to the display unit 7000.

[0353] The larger the display unit 7000 is, the more information can be provided at once. Also, the larger the display unit 7000 is, the easier it is for people's eyes to notice, and for example, the advertising effect can be enhanced.

[0354] By applying a touch panel to the display unit 7000, an image or video can be presented on the display unit 7000. Preferably, not only is it shown, but also it can be intuitively operated by the user. Also, when used for the purpose of providing information such as route information or traffic information, the usability can be improved by intuitive operation.

[0355] Also, as shown in FIGS. 21(C) and 21(D), the digital signage 7300 or the digital signage 7400 is preferably capable of wireless communication with an information terminal 7311 such as a smartphone held by the user or the information terminal 7411. For example, the information of the advertisement displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. Also, by operating the information terminal 7311 or the information terminal 7411 the display on the display unit 7000 can be switched.

[0356] Also, a game can be executed on the digital signage 7300 or the digital signage 7400, using the screen of the information terminal 7 311 or the information terminal 7411 as an operation means (controller). As a result, an unspecified number of users can participate in the game and enjoy it simultaneously.

[0357] FIG. 22(A) is a view showing the appearance of the camera 8000 with the finder 8100 attached.

[0358] The camera 8000 includes a housing 8001, a display unit 8002, operation buttons 8003, a shutter button 8004, etc. Also, a detachable lens 8006 is attached to the camera 8000. Note that the camera 8000 may have the lens 8006 and the housing integrated.

[0359] ​​​​​​​The camera 8000 can take images by pressing the shutter button 8004 or touching the display unit 8002 that functions as a touch panel.

[0360] The housing 8001 has a mount with electrodes, and in addition to the viewfinder 8100, a strobe device or the like can be connected.

[0361] The viewfinder 8100 has a housing 8101, a display unit 8102, buttons 8103, etc.

[0362] The housing 8101 is attached to the camera 8000 by a mount that engages with the mount of the camera 8000. The viewfinder 8100 can display images and the like received from the camera 8000 on the display unit 8102.

[0363] The button 8103 has a function as a power button or the like.

[0364] The display device according to one aspect of the present invention can be applied to the display unit 8002 of the camera 8000 and the display unit 8102 of the viewfinder 8100. Note that the camera 8000 may have a built-in viewfinder.

[0365] FIG. 22(B) is a diagram showing the appearance of the head-mounted display 8200.

[0366] The head-mounted display 8200 has a mounting portion 8201, a lens 8202, a main body 820 3, a display unit 8204, a cable 8205, etc. Further, a battery 8206 is built into the mounting portion 8201.

[0367] The cable 8205 supplies power from the battery 8206 to the main body 8203. The main body 820 3 is equipped with a wireless receiver or the like and can display the received video information on the display unit 8204. In addition, the main body 8203 is equipped with a camera and can be used as an input means for information on the movement of the user's eyeballs and eyelids.

[0368] Further, on the wearing part 8201, a plurality of electrodes capable of detecting a current flowing along with the movement of the user's eyeballs are provided at positions where the user is touched, and it may have a function of recognizing the line of sight. Also it may have a function of monitoring the user's pulse by the current flowing through the electrode. Also the wearing part 8201 may have various sensors such as a temperature sensor, a pressure sensor, and an acceleration sensor, and may have a function of displaying the user's biological information on the display unit 8204 or a function of changing the video displayed on the display unit 8204 in accordance with the movement of the user's head.

[0369] The display device according to one aspect of the present invention can be applied to the display unit 8204.

[0370] FIGS. 22(C), 22(D), and 22(E) are views showing the appearance of the head-mounted display 8300. The head-mounted display 8300 has a housing 8301, a display unit 8302, a band-shaped fixture 8304, and a pair of lenses 8305.

[0371] The user can visually recognize the display on the display unit 8302 through the lens 8305. Also when the display unit 8302 is curved and arranged, it is preferable because the user can feel a high sense of immersion. Also, by visually recognizing different images displayed in different regions of the display unit 8302 through the lens 83 05, it is possible to perform three-dimensional display or the like using parallax. Note that the table The configuration is not limited to providing one display unit 8302. Two display units 8302 may be provided, with one display unit arranged for each eye of the user.

[0372] The display device according to one aspect of the present invention can be applied to the display unit 8302. Since the display device according to one aspect of the present invention has extremely high definition, even when the display is enlarged and viewed using the lens 8305 as shown in FIG. 22(E), it is difficult for the user to visually recognize the pixels. That is, by using the display unit 8302, it is possible to allow the user to visually recognize a highly realistic video.

[0373] The electronic device shown in FIGS. 23(A) to 23(F) includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), connection terminals 9006, a sensor 9007 (having a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, odor or infrared rays), a microphone 9008, etc.

[0374] The electronic device shown in FIGS. 23(A) to 23(F) has various functions. For example, it can have a function of displaying various information (such as still images, moving images, text images, etc.) on the display unit, a touch panel function, a function of displaying a calendar, date or time, etc., a function of controlling processing according to various software (programs), a wireless communication function, a function of reading and processing programs or data recorded on a recording medium, etc. Note that the functions of the electronic device are not limited to these and can have various functions. The electronic device can have a plurality of display units. ​​​​​​​​​​​​​​This is also acceptable. Additionally, an electronic device may be provided with a camera or the like to capture still images or moving images and store them in a recording medium (external or built into the camera), and may have functions such as displaying the captured images on a display unit, etc. This is also acceptable.

[0375] Regarding the details of the electronic device shown in FIGS. 23(A) to 23(F), the following explanation will be given.

[0376] FIG. 23(A) is a perspective view showing a portable information terminal 9101. The portable information terminal 9101 can be used, for example, as a smartphone. Note that the portable information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, etc. Also, the portable information terminal 9101 can display character and image information on its multiple surfaces. FIG. 23(A) shows an example in which three icons 9050 are displayed. Also, information 90 51 shown by a dashed-line rectangle can be displayed on other surfaces of the display unit 9001. As an example of the information 9051, there are notifications of incoming calls such as e-mails, SNS, and phone calls, titles of e-mails and SNS, sender names , dates, times, remaining battery levels, antenna reception strengths, etc. Or, icons 9050 or the like may be displayed at the position where the information 9051 is displayed.

[0377] FIG. 23(B) is a perspective view showing a portable information terminal 9102. The portable information terminal 9102 has a function of displaying information on three or more surfaces of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different surfaces respectively. For example, the user can also confirm the information 9053 displayed at a position where it can be observed from above the portable information terminal 9102 while the portable information terminal 9102 is stored in the breast pocket of a suit. The user , it is possible to check the display without taking out the portable information terminal 9102 from the pocket and determine, for example, whether to receive a call. or not.

[0378] FIG. 23(C) is a perspective view showing a wristwatch-type portable information terminal 9200. The portable information terminal 9 200 can be used as, for example, a smartwatch. Also, the display unit 9001 is provided with its display surface curved and can perform display along the curved display surface. Also , the portable information terminal 9200 can communicate with, for example, a wirelessly communicable headset to make a hands-free call. Also, the portable information terminal 9200 can perform data transmission with other information terminals and charging through the connection terminal 9006. Note that the charging operation may be performed by wireless power supply.

[0379] FIGS. 23(D), 23(E), and 23(F) are perspective views showing a foldable portable information terminal 9201. Also, FIG. 23(D) shows the state where the portable information terminal 9201 is unfolded, and FIG. 23 (F) shows the folded state, and FIG. 23(E) is a perspective view of the state in the middle of changing from one of FIG. 23(D) and FIG. 23(F) to the other. The portable information terminal 9201 has excellent portability in the folded state and excellent display comprehensibility with a seamless wide display area in the unfolded state. The display unit 9001 of the portable information terminal 9201 is supported by three housings 9000 connected by the hinge 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less.

[0380] This embodiment can be appropriately combined with other embodiments and examples.

Description of Reference Numerals

[0381] M1: Transistor, M2: Transistor, M3: Transistor, M4: Transistor, M5: Transistor, 10A: Display device, 10B: Display device, 15A: Display device, 71: Display unit, 74: FPC, 75: Connection part, 78: Driving circuit, 101: Substrate, 104: Insulating layer 、110a: Light emitting element, 110b: Light emitting element, 110B: Light emitting element, 110G: Light emitting element 、110R: Light emitting element, 110W: Light emitting element, 111: Pixel electrode, 112a: Optical adjustment layer 、112b: Optical adjustment layer, 112B: Optical adjustment layer, 112G: Optical adjustment layer, 112R: Opt ical adjustment layer, 112W: Optical adjustment layer, 113: EL layer, 113EM: Light, 114: Common electrode 、115: Protection layer, 115n: Region, 116: Semitransparent layer, 116a: Semitransparent layer, 116b : Semitransparent layer, 117: Reflective layer, 118: Pixel electrode, 119a: Optical adjustment layer, 119b: Lig ht optical adjustment layer, 119c: Optical adjustment layer, 120: Conductive layer, 121: Protection layer, 122: Planarization layer 、123: Functional layer, 124: Light emitting element, 125: Protection layer, 127: Power line, 129: Common wiring, 130: Pixel, 141: Insulating layer, 200A: Display device, 200B: Display device, 20 0C: Display device, 200D: Display device, 201: Conductive layer, 202: Insulating layer, 203a: Con ductive layer, 203b: Conductive layer, 204: Semiconductor layer, 208: Insulating layer, 211: Insulating layer, 212 : Insulating layer, 213: Insulating layer, 214a: Channel formation region, 214b: Low resistance region, 21 4c: LDD region, 220: Transistor, 230: Transistor, 300: Touch panel r, 301: Transistor, 303: Transistor, 306: Connection part, 307: Wiring, 3 08: Connection part, 309: Connector, 310: Input device, 311: Gate insulating layer, 312: Ins Edge layer, 313: Insulating layer, 314: Insulating layer, 315: Insulating layer, 317: Adhesive layer, 318: Adhesive layer, 319: Connector, 330: Substrate, 331: Electrode, 332: Electrode, 333: Electrode, 3 34: Electrode, 341: Wiring, 342: Wiring, 350: FPC, 351: IC, 356: Conductive layer, 356a: Conductive layer, 356b: Conductive layer, 357a: Conductive layer, 357b: Conductive layer, 3 58: Conductive layer, 361: Substrate, 363: Adhesive layer, 365: Insulating layer, 367: Insulating layer, 37 0: Display device, 371: Substrate, 374: IC, 387: Intersection, 390: Circular polarizing plate, 39 1: Insulating layer, 392: Insulating layer, 395: Insulating layer, 396: Adhesive layer, 400: Display device, 4 01: Substrate, 401a: Substrate, 410: Transistor, 411: Conductive layer, 412: Low resistance region, 413: Insulating layer, 414: Insulating layer, 419: Element isolation region, 420: Transistor , 421: Semiconductor layer, 422: Metal oxide layer, 423: Insulating layer, 424: Conductive layer, 425 : Conductive layer, 426: Insulating layer, 427: Conductive layer, 428: Insulating layer, 430: Transistor, 431: Insulating layer, 432: Insulating layer, 440: Capacitor element, 441: Conductive layer, 442: Conductive layer , 443: Insulating layer, 451: Conductive layer, 452: Conductive layer, 453: Conductive layer, 461: Insulating layer , 462: Insulating layer, 463: Insulating layer, 464: Insulating layer, 465: Insulating layer, 471: Plug , 471a: Conductive layer, 471b: Conductive layer, 472: Plug, 473: Plug, 474: Plug , 480: Display module, 481: Display unit, 482: Circuit unit, 483: Pixel circuit unit , 483a: Pixel circuit, 484: Pixel section, 484a: Pixel, 485: Terminal section, 486: Wiring section, 490: FPC, 492: Insulating layer, 7000: Display unit, 7100: Television set device, 7101: Housing, 7103: Stand, 7111: Remote control operation unit, 7200: Notebook T-shaped personal computer, 7211: housing, 7212: keyboard, 7213: poi nting device, 7214: external connection port, 7300: digital signage, 73 01: housing, 7303: speaker, 7311: information terminal, 7400: digital signage 7401: pillar, 7411: information terminal, 8000: camera, 8001: housing, 800 2: display unit, 8003: operation button, 8004: shutter button, 8006: lens, 8100: viewfinder, 8101: housing, 8102: display unit, 8103: button, 82 00: head-mounted display, 8201: mounting part, 8202: lens, 8203: main body, 8204: display unit, 8205: cable, 8206: battery, 8300: head mounted display, 8301: housing, 8302: display unit, 8304: fixture, 830 5: lens, 9000: housing, 9001: display unit, 9003: speaker, 9005: operation key, 9006: connection terminal, 9007: sensor, 9008: microphone, 9050: icon, 9051: information, 9052: information, 9053: information, 9054: information, 905 5: hinge, 9101: portable information terminal, 9102: portable information terminal, 9200: portable information terminal 9201: portable information terminal

Claims

Claim 1 A display device having a first pixel electrode, a second pixel electrode, a light-emitting layer, a common electrode, a first protective layer, and a semi-transmissive layer, wherein the light-emitting layer has a first region located on the first pixel electrode and a second region located on the second pixel electrode, the common electrode is located on the light-emitting layer, the first protective layer is located on the common electrode, the semi-transmissive layer is located on the first protective layer, the reflectivity of the semi-transmissive layer with respect to visible light is higher than the reflectivity of the common electrode with respect to visible light, the semi-transmissive layer does not overlap with the first region, and the semi-transmissive layer overlaps with the second region.

Images