Light-emitting device, functional panel, light-emitting device, display device, lighting device, and electronic apparatus

Abstract

To provide a novel light-emitting device that is highly convenient, useful, or reliable.SOLUTION: A light emitting device has a first electrode, a second electrode, a unit, and a first layer. The unit is sandwiched between the first electrode and the second electrode, and comprises a second layer, a third layer, and a fourth layer. The second layer is interposed between the third layer and the fourth layer and includes a light-emitting material. The third layer is sandwiched between the second layer and the second electrode, is in contact with the second layer, and includes a first material and an organometallic complex of an alkali metal or an organometallic complex of an alkaline earth metal. The fourth layer is sandwiched between the first electrode and the second layer and includes a second material. The first layer is sandwiched between the first electrode and the unit and includes the second material and a material having an electron acceptor property. The second material has a first refractive index, the first refractive index is 1.5 or more to 1.75 or less in a wavelength range of 455 nm or more and 465 nm or less, the second material has a HOMO level, and the HOMO level is -5.7 eV or more and -5.3 eV or less.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention relates to a light-emitting device, a functional panel, a light-emitting apparatus, a display device, an electronic device, or a lighting apparatus.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one embodiment of the present invention disclosed in this specification include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, a driving method thereof, or a manufacturing method thereof. [Background technology]

[0003] Light-emitting devices (organic EL devices) that utilize electroluminescence (EL) using organic compounds are becoming more and more practical. The basic structure of these light-emitting devices is a pair of electrodes sandwiching an organic compound layer (EL layer) containing a light-emitting material between them. By applying a voltage to this element, carriers (holes and electrons) are injected, and the recombination energy of these carriers is utilized to emit light from the light-emitting material.

[0004] Since such light-emitting devices are self-luminous, when used as display pixels, they offer advantages such as higher visibility than liquid crystals and no need for backlighting, making them suitable for flat panel display elements. Another major advantage of displays using such light-emitting devices is that they can be fabricated to be thin and lightweight. Another feature is their extremely fast response time.

[0005] Furthermore, these light-emitting devices can have a continuous light-emitting layer formed two-dimensionally, enabling planar light emission, which is a feature that is difficult to obtain with point light sources such as incandescent light bulbs or light-emitting diodes, or linear light sources such as fluorescent lamps, making them highly useful as planar light sources for lighting and other applications.

[0006] Although displays or lighting devices using such light-emitting devices are suitable for a variety of electronic devices, research and development is ongoing to find light-emitting devices with better characteristics.

[0007] One of the problems often cited when discussing organic EL elements is their low light extraction efficiency. In particular, attenuation due to reflection caused by differences in the refractive index of adjacent layers is a major factor in reducing the efficiency of the element. To reduce this effect, a structure has been proposed in which a layer made of a low refractive index material is formed inside the EL layer (see, for example, Non-Patent Document 1).

[0008] Light-emitting devices with this structure can have higher light extraction efficiency and therefore higher external quantum efficiency than light-emitting devices with conventional structures. However, it is not easy to form such a low-refractive-index layer within the EL layer without adversely affecting other important properties of the light-emitting device. This is because there is a trade-off between a low refractive index and high carrier transport properties or reliability when used in a light-emitting device. This problem arises because the carrier transport properties and reliability of organic compounds are largely due to the presence of unsaturated bonds, and organic compounds with many unsaturated bonds tend to have a high refractive index. [Prior art documents] [Patent documents]

[0009] [Patent Document 1] Japanese Patent Application Publication No. 11-282181 [Patent Document 2] Japanese Patent Application Laid-Open No. 2009-91304 [Patent Document 3] U.S. Patent Application Publication No. 2010 / 104969 [Non-patent literature]

[0010] [Non-Patent Document 1] Jaeho Lee and 12 others, "Synergetic electrode architecture for efficient graphene-based flexible organic light-emitting diodes," Nature Communications, June 2, 2016, DOI: 10.1038 / ncomms11791 Summary of the Invention [Problem to be solved by the invention]

[0011] An object of one embodiment of the present invention is to provide a novel light-emitting device with excellent convenience, usefulness, or reliability. Another object is to provide a novel functional panel with excellent convenience, usefulness, or reliability. Another object is to provide a novel light-emitting device with excellent convenience, usefulness, or reliability. Another object is to provide a novel display device with excellent convenience, usefulness, or reliability. Another object is to provide a novel electronic device with excellent convenience, usefulness, or reliability. Another object is to provide a novel lighting device with excellent convenience, usefulness, or reliability. Another object is to provide a novel light-emitting device, a novel functional panel, a novel light-emitting device, a novel display device, a novel electronic device, or a novel lighting device.

[0012] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract other problems from the description of the specification, drawings, claims, etc. [Means for solving the problem]

[0013] (1) One embodiment of the present invention is a light-emitting device including a first electrode, a second electrode, a first unit, and a first layer.

[0014] The second electrode has an area that overlaps with the first electrode, the first unit has an area that is sandwiched between the first electrode and the second electrode, and the first unit has a second layer, a third layer, and a fourth layer.

[0015] The second layer has a region sandwiched between the third layer and the fourth layer, and the second layer includes a light-emitting material. Note that in the description of this specification, when one layered structure has a region sandwiched between two other layered structures, the one layered structure can be rephrased as being sandwiched between the other two layered structures.

[0016] The third layer has a region sandwiched between the second layer and the second electrode, the third layer contacts the second layer, and the third layer includes the first material and an organometallic complex of an alkali metal or an organometallic complex of an alkaline earth metal.

[0017] The fourth layer comprises a region sandwiched between the first electrode and the second layer, the fourth layer comprising a second material HT1.

[0018] The first layer comprises a region sandwiched between the first electrode and the first unit, and the first layer includes a second material HT1 and a material AM having electron acceptor properties.

[0019] The second material HT1 has a refractive index n1, which is equal to or greater than 1.5 and equal to or less than 1.75 in the wavelength range of 455 nm to 465 nm.

[0020] The first HOMO level of the second material HT1 is not less than −5.7 eV and not more than −5.3 eV.

[0021] (2) Another embodiment of the present invention is the above light-emitting device, wherein the fourth layer includes a first region and a second region.

[0022] The first region includes a second material HT1, the second region includes a portion sandwiched between the second layer and the first region, and the second region includes a third material HT2.

[0023] The third material HT2 has a second HOMO level, which is in the range of −0.2 eV to 0 eV relative to the first HOMO level.

[0024] (3) Another aspect of the present invention is the light-emitting device, wherein the first material has a refractive index n2, which is 1.5 or more and 1.75 or less in the wavelength range of 455 nm or more and 465 nm or less.

[0025] This can increase the luminous efficiency, or can improve not only the efficiency but also the reliability, thereby providing a novel light-emitting device that is highly convenient, useful, and reliable.

[0026] (4) Another embodiment of the present invention is a light-emitting device including a first electrode, a second electrode, and a first unit.

[0027] The second electrode has an area that overlaps with the first electrode, the first unit has an area that is sandwiched between the first electrode and the second electrode, and the first unit has a first layer, a second layer, and a third layer.

[0028] The first layer comprises a region sandwiched between the second layer and the third layer, the first layer including a light emitting material.

[0029] The third layer has a region sandwiched between the first layer and the second electrode, the third layer contacts the first layer, and the third layer includes the first material and an organometallic complex of an alkali metal or an organometallic complex of an alkaline earth metal.

[0030] The first material has a refractive index n2, which is equal to or greater than 1.5 and equal to or less than 1.75 in the wavelength range of 455 nm to 465 nm.

[0031] (5) In one embodiment of the present invention, the electron mobility of the first material is 1×10 when the square root of the electric field strength [V / cm] is 600. -7 cm 2 / Vs or more 5×10 -5 cm 2 The light-emitting device has a capacitance of 1 / Vs or less.

[0032] This can increase the luminous efficiency, or can improve not only the efficiency but also the reliability, thereby providing a novel light-emitting device that is highly convenient, useful, and reliable.

[0033] (6) Another embodiment of the present invention is a light-emitting device including a second unit and an intermediate layer.

[0034] The second unit comprises a region sandwiched between the intermediate layer and the second electrode.

[0035] The intermediate layer has a region sandwiched between the first unit and the second unit, and has the function of supplying holes to one of the first unit and the second unit and supplying electrons to the other.

[0036] (7) Another aspect of the present invention is a functional panel having a functional layer and pixels.

[0037] The functional layer comprises a pixel circuit, and the pixel comprises the pixel circuit and the light-emitting device described above.

[0038] The first electrode has an area sandwiched between the functional layer and the second electrode, and the first electrode is electrically connected to the pixel circuit.

[0039] This allows the pixel circuit to control the light emission of the light-emitting device or display image information, thereby providing a novel functional panel that is highly convenient, useful, and reliable.

[0040] (8) Another aspect of the present invention is the functional panel described above, wherein the first electrode has a first transmittance, the second electrode has a second transmittance, and the second transmittance is higher than the first transmittance.

[0041] This allows light emitted by the light-emitting device to be extracted without passing through a functional layer, or allows light emitted by the light-emitting device to be extracted efficiently without being blocked.

[0042] (9) Another aspect of the present invention is the functional panel described above, wherein the first electrode has a first transmittance, the second electrode has a second transmittance, and the second transmittance is lower than the first transmittance.

[0043] (10) Another embodiment of the present invention is a light-emitting device including the above-described light-emitting device and a transistor or a substrate.

[0044] (11) Another embodiment of the present invention is a display device including the above-described light-emitting device and a transistor or a substrate.

[0045] (12) Another embodiment of the present invention is a lighting device including the above-described light-emitting device and a housing.

[0046] (13) Another embodiment of the present invention is an electronic device including the above display device, a sensor, an operation button, a speaker, or a microphone.

[0047] In the drawings accompanying this specification, components are classified by function and shown as block diagrams that are independent of each other, but in reality, it is difficult to completely separate components by function, and one component may be involved in multiple functions.

[0048] In this specification, the term "light-emitting device" includes an image display device using a light-emitting element. The term "light-emitting device" may also include a module in which a connector, such as an anisotropic conductive film or TCP (Tape Carrier Package), is attached to a light-emitting element, a module in which a printed wiring board is provided at the end of the TCP, or a module in which an IC (integrated circuit) is directly mounted on a light-emitting element using a COG (Chip On Glass) method. Furthermore, lighting fixtures and the like may have a light-emitting device. [Effects of the Invention]

[0049] According to one embodiment of the present invention, a novel light-emitting device with excellent convenience, usefulness, or reliability can be provided. Or, a novel functional panel with excellent convenience, usefulness, or reliability can be provided. Or, a novel light-emitting device with excellent convenience, usefulness, or reliability can be provided. Or, a novel display device with excellent convenience, usefulness, or reliability can be provided. Or, a novel electronic device with excellent convenience, usefulness, or reliability can be provided. Or, a novel lighting device with excellent convenience, usefulness, or reliability can be provided. Or, a novel light-emitting device, a novel functional panel, a novel light-emitting device, a novel display device, a novel electronic device, or a novel lighting device can be provided.

[0050] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these will become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract other effects from the description in the specification, drawings, claims, etc. [Brief explanation of the drawings]

[0051] [Figure 1] 1A and 1B are diagrams illustrating the configuration of a light-emitting device according to an embodiment. [Figure 2] 2A and 2B are diagrams illustrating the configuration of a light-emitting device according to an embodiment. [Figure 3] 3A and 3B are diagrams illustrating the configuration of a functional panel according to an embodiment. [Figure 4] 4A to 4C are diagrams illustrating the configuration of a functional panel according to an embodiment. [Figure 5] FIG. 5 is a circuit diagram illustrating the configuration of the functional panel according to the embodiment. [Figure 6] FIG. 6 is a cross-sectional view illustrating the configuration of a functional panel according to the embodiment. [Figure 7] 7A and 7B are cross-sectional views illustrating the configuration of a functional panel according to the embodiment. [Figure 8] 8A and 8B are cross-sectional views illustrating the configuration of a functional panel according to the embodiment. [Figure 9] 9A and 9B are cross-sectional views illustrating the configuration of a functional panel according to the embodiment. [Figure 10] FIG. 10A is a top view of the active matrix light emitting device, and FIG. 10B is a cross-sectional view. [Figure 11] 11A and 11B are cross-sectional views of an active matrix light emitting device. [Figure 12] FIG. 12 is a cross-sectional view of an active matrix light emitting device. [Figure 13] FIG. 13A is a perspective view of a passive matrix light emitting device, and FIG. 13B is a cross-sectional view. [Figure 14] FIG. 14A is a cross-sectional view of the lighting device, and FIG. 14AB is a top view. [Figure 15] 15A, 15B1, 15B2 and 15C are diagrams showing electronic devices. [Figure 16] 16A to 16C are diagrams showing electronic devices. [Figure 17] FIG. 17 is a diagram showing a lighting device. [Figure 18] FIG. 18 is a diagram showing a lighting device. [Figure 19] FIG. 19 is a diagram showing an in-vehicle display device and a lighting device. [Figure 20] 20A to 20C are diagrams showing electronic devices. [Figure 21] 21A to 21C are diagrams illustrating the configuration of a light-emitting device according to an example. [Figure 22] FIG. 22 is a diagram illustrating wavelength-refractive index characteristics of materials according to the example. [Figure 23] FIG. 23 is a diagram illustrating the current density-luminance characteristics of the light-emitting device according to the example. [Figure 24] FIG. 24 is a diagram illustrating the luminance-current efficiency characteristics of the light-emitting device according to the example. [Figure 25] FIG. 25 is a diagram illustrating the voltage-luminance characteristics of the light-emitting device according to the example. [Figure 26] FIG. 26 is a diagram illustrating the voltage-current characteristics of the light-emitting device according to the example. [Figure 27] FIG. 27 is a diagram illustrating the luminance-blue index characteristics of a light-emitting device according to an example. [Figure 28] FIG. 28 is a diagram illustrating the emission spectrum of the light-emitting device according to the example. [Figure 29] FIG. 29 is a diagram illustrating the normalized luminance-time change characteristics of the light-emitting device according to the example. [Figure 30] FIG. 30 is a diagram illustrating the current density-luminance characteristics of the light-emitting device according to the example. [Figure 31] FIG. 31 is a diagram illustrating the luminance-current efficiency characteristics of the light-emitting device according to the example. [Figure 32] FIG. 32 is a diagram illustrating the voltage-luminance characteristics of the light-emitting device according to the example. [Figure 33] FIG. 33 is a diagram illustrating the voltage-current characteristics of the light-emitting device according to the example. [Figure 34] FIG. 34 is a diagram illustrating the luminance-external quantum efficiency characteristics of the light-emitting device according to the example. [Figure 35] FIG. 35 is a diagram illustrating the emission spectrum of the light-emitting device according to the example. [Figure 36]FIG. 36 is a diagram illustrating the normalized luminance-time change characteristics of the light-emitting device according to the example. DETAILED DESCRIPTION OF THE INVENTION

[0052] A light-emitting device according to one embodiment of the present invention includes a first electrode, a second electrode, a unit, and a first layer. The unit is sandwiched between the first electrode and the second electrode, and the unit includes a second layer, a third layer, and a fourth layer. The second layer is sandwiched between the third layer and the fourth layer, and the second layer includes a light-emitting material. The third layer is sandwiched between the second layer and the second electrode, and the third layer is in contact with the second layer, and the third layer includes a first material and an organometallic complex of an alkali metal or an alkaline earth metal. The fourth layer is sandwiched between the first electrode and the second layer, and includes the second material. The first layer is sandwiched between the first electrode and the unit, and the first layer includes the second material and a material having electron acceptor properties. The second material has a first refractive index, which is 1.5 or more and 1.75 or less in the wavelength range of 455 nm or more and 465 nm or less, and the second material has a HOMO level, which is -5.7 eV or more and -5.3 eV or less.

[0053] This can increase the luminous efficiency, or can improve not only the efficiency but also the reliability, thereby providing a novel light-emitting device that is highly convenient, useful, and reliable.

[0054] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes in form and details can be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below. In the configuration of the invention described below, the same parts or parts having similar functions will be denoted by the same reference numerals in different drawings, and repeated explanations will be omitted.

[0055] (Embodiment 1) In this embodiment, a structure of a light-emitting device 150 of one embodiment of the present invention will be described with reference to FIG.

[0056] FIG. 1A illustrates a structure of a light-emitting device according to one embodiment of the present invention, and FIG. 1B illustrates part of the structure of FIG. 1A.

[0057] <Configuration Example 1 of Light-Emitting Device 150> Light-emitting device 150 described in this embodiment includes electrode 551G(i,j), electrode 552, and EL layer 553 (see FIG. 1A). Electrode 552 has a region overlapping with electrode 551G(i,j). EL layer 553 includes unit 103.

[0058] <<Example of Unit 103 configuration>> Unit 103 comprises a region sandwiched between electrode 551G(i,j) and electrode 552. Unit 103 comprises layer 111, layer 112 and layer 113.

[0059] Example of Layer 111 The layer 111 includes a region sandwiched between the layer 112 and the layer 113, and includes a light-emitting material. The layer 111 also includes a light-emitting material and a host material. The layer 111 can be referred to as a light-emitting layer.

[0060] It is preferable to arrange the layer 111 in a region where holes and electrons recombine. This allows the energy generated by the recombination of carriers to be efficiently converted into light and emitted. It is also preferable to arrange the layer 111 away from metals used for electrodes, etc. This makes it possible to suppress the quenching phenomenon caused by metals used for electrodes, etc.

[0061] For example, fluorescent materials, phosphorescent materials, or materials exhibiting thermally activated delayed fluorescence (TADF) (also called TADF materials) can be used as the light-emitting material, allowing the energy generated by carrier recombination to be emitted from the light-emitting material as light EL1.

[0062] <<Configuration Example 1 of Layer 113>> Layer 113 comprises a region sandwiched between layer 111 and electrode 552, layer 113 contacts layer 111, and layer 113 includes material ET and an organometallic complex of an alkali metal or an organometallic complex of an alkaline earth metal.

[0063] For example, a material having an electron-transporting property, a material having an anthracene skeleton, or a mixed material can be used as the material ET. The layer 113 can be referred to as an electron-transporting layer. Note that it is preferable that the layer 113 be made of a material having a larger band gap than that of the light-emitting material contained in the layer 111. This can suppress energy transfer from excitons generated in the layer 111 to the layer 113.

[0064] <<Configuration Example 1 of Layer 112>> Layer 112 comprises a region sandwiched between electrode 551G(i,j) and layer 111, and layer 112 includes material HT1.

[0065] A material having a hole-transporting property can be used for the layer 112. The layer 112 can also be referred to as a hole-transport layer. Note that it is preferable that a material having a larger band gap than that of the light-emitting material contained in the layer 111 be used for the layer 112. This can suppress energy transfer from excitons generated in the layer 111 to the layer 112.

[0066] The material HT1 has a refractive index n1, which is 1.5 or more and 1.75 or less in the wavelength range of 455 nm or more and 465 nm or less, or 1.45 or more and 1.70 or less at 633 nm.

[0067] For example, a material having hole transport properties and an ordinary refractive index of 1.50 or more and 1.75 or less in the blue light emission region (e.g., 455 nm or more and 465 nm or less), or an ordinary refractive index of 1.45 or more and 1.70 or less in the 633 nm light that is typically used to measure refractive index, can be used as material HT1.

[0068] If the material has anisotropy, the refractive index for ordinary light and the refractive index for extraordinary light may differ. If the thin film to be measured is in such a state, anisotropy analysis can be performed to separate the ordinary refractive index and the extraordinary refractive index and calculate each refractive index. In this specification, if the measured material has both an ordinary refractive index and an extraordinary refractive index, the ordinary refractive index is used as the index.

[0069] [Hole-transporting materials] One example of the material having hole-transporting properties is a monoamine compound having a first aromatic group, a second aromatic group, and a third aromatic group, in which the first aromatic group, the second aromatic group, and the third aromatic group are bonded to the same nitrogen atom.

[0070] In the monoamine compound, the ratio of carbon atoms forming bonds with sp3 hybrid orbitals to the total number of carbon atoms in the molecule is preferably 23% or more and 55% or less, and 1 The monoamine compound is preferably a compound in which the integral value of a signal below 4 ppm exceeds the integral value of a signal at 4 ppm or more when the compound is measured by H-NMR.

[0071] Furthermore, it is preferable that the monoamine compound has at least one fluorene skeleton, and that one or more of the first aromatic group, the second aromatic group, and the third aromatic group have a fluorene skeleton.

[0072] Examples of the material having the hole transporting property include those having the following general formula (G h1 1)~(G h1 4) An example of an organic compound having the structure shown below is:

[0073] [ka]

[0074] The above general formula (G h1In 1), Ar 1 , Ar 2 each independently represents a benzene ring or a substituent in which two or three benzene rings are bonded to each other. 1 , Ar 2 one or both of the groups have one or more hydrocarbon groups having 1 to 12 carbon atoms, in which carbon atoms form bonds only through sp3 hybrid orbitals, and Ar 1 and Ar 2 The total number of carbon atoms contained in all the hydrocarbon groups bonded to Ar is 8 or more, and 1 and Ar 2 The total number of carbon atoms contained in all the hydrocarbon groups bonded to either one of Ar 1 or Ar 2 When a plurality of linear alkyl groups having 1 or 2 carbon atoms are bonded to the hydrocarbon group, the linear alkyl groups may be bonded to each other to form a ring.

[0075] [ka]

[0076] The above general formula (G h1 In 2), m and r each independently represent 1 or 2, and m+r is 2 or 3. t represents an integer of 0 to 4, preferably 0. 5 represents either hydrogen or a hydrocarbon group having 1 to 3 carbon atoms. When m is 2, the types of substituents, the number of substituents, and the positions of bonds of the two phenylene groups may be the same or different, and when r is 2, the types of substituents, the number of substituents, and the positions of bonds of the two phenyl groups may be the same or different. When t is an integer of 2 to 4, a plurality of R 5 may be the same or different, and R 5 Adjacent groups may be bonded to each other to form a ring.

[0077] [ka]

[0078] The above general formula (G h1 2) and (G h1 In 3), n and p each independently represent 1 or 2, and n+p is 2 or 3. s represents an integer of 0 to 4, preferably 0. 4 represents either hydrogen or a hydrocarbon group having 1 to 3 carbon atoms, and when n is 2, the types of substituents, the number of substituents, and the positions of bonds of the two phenylene groups may be the same or different, and when p is 2, the types of substituents, the number of substituents, and the positions of bonds of the two phenyl groups may be the same or different. 4 may be the same or different.

[0079] [ka]

[0080] The above general formula (G h1 2)~(G h1 4) In R 10 ~R 14 and R 20 ~R 24 Each independently represents hydrogen or a hydrocarbon group having 1 to 12 carbon atoms in which carbon atoms form bonds only through sp3 hybrid orbitals. 10 ~R 14 At least 3 of, and R 20 ~R 24 Preferably, at least 3 of R are hydrogen. As hydrocarbon groups having 1 to 12 carbon atoms in which carbon atoms form bonds only with sp3 hybrid orbitals, tert-butyl and cyclohexyl groups are preferred. This can reduce the refractive index of a film containing the organic compound. However, R 10 ~R 14 and R 20 ~R 24 The total number of carbon atoms contained in is 8 or more, and R 10 ~R 14 or R 20 ~R 24The total number of carbon atoms in either of the two groups must be 6 or more. 4 , R 10 ~R 14 and R 20 ~R 24 Adjacent groups may be bonded to each other to form a ring.

[0081] In addition, the above general formula (G h1 1)~(G h1 In 4), u represents an integer of 0 to 4, and is preferably 0. When u is an integer of 2 to 4, a plurality of R 3 may be the same or different. 1 , R 2 and R 3 each independently represents an alkyl group having 1 to 4 carbon atoms; R 1 and R 2 may be bonded to each other to form a ring.

[0082] Furthermore, one of the materials having hole transport properties is preferably an arylamine compound having at least one aromatic group, the aromatic group having first to third benzene rings and at least three alkyl groups, where the first to third benzene rings are bonded in this order, and the first benzene ring is directly bonded to the nitrogen of the amine.

[0083] The first benzene ring may further have a substituted or unsubstituted phenyl group, preferably an unsubstituted phenyl group, and the second benzene ring or the third benzene ring may have a phenyl group substituted with an alkyl group.

[0084] It should be noted that hydrogen is not directly bonded to the carbon atoms at the first and third positions of two or more of the first to third benzene rings, preferably all of the benzene rings, but is bonded to any of the first to third benzene rings, the phenyl group substituted with an alkyl group, the at least three alkyl groups, and the nitrogen of the amine.

[0085] The arylamine compound preferably further has a second aromatic group. The second aromatic group is preferably an unsubstituted monocyclic ring or a group having substituted or unsubstituted fused rings of three or less, more preferably a substituted or unsubstituted fused ring of three or less, and the fused ring is more preferably a group having a fused ring with 6 to 13 carbon atoms forming the ring, and even more preferably a group having a fluorene ring. The second aromatic group is preferably a dimethylfluorenyl group.

[0086] The arylamine compound preferably further comprises a third aromatic group, which is a group having one to three substituted or unsubstituted benzene rings.

[0087] The at least three alkyl groups are preferably chain alkyl groups having 2 to 5 carbon atoms. The alkyl group substituting the phenyl group is preferably a chain alkyl group having 2 to 5 carbon atoms. In particular, the chain alkyl group having 2 to 5 carbon atoms is preferably a branched chain alkyl group having 3 to 5 carbon atoms, and more preferably a t-butyl group.

[0088] Examples of the material having the hole transporting property as described above include the following (G h2 1)~(G h2 3) An example of an organic compound having the structure shown below is an organic compound having the structure shown below.

[0089] [ka]

[0090] In addition, the above general formula (G h2 In 1), Ar 101 represents a substituted or unsubstituted benzene ring, or a substituent in which two or three substituted or unsubstituted benzene rings are bonded to each other.

[0091] [ka]

[0092] In addition, the above general formula (G h2 In 2), x and y each independently represent 1 or 2, and x+y is 2 or 3. 109 represents an alkyl group having 1 to 4 carbon atoms, and w represents an integer of 0 to 4. 141 ~R 145 Each independently represents one of hydrogen, an alkyl group having 1 to 6 carbon atoms, and a cycloalkyl group having 5 to 12 carbon atoms. When w is 2 or more, multiple R 109 may be the same or different. When x is 2, the type of substituents, the number of substituents, and the position of the bond of the two phenylene groups may be the same or different. When y is 2, the two R 141 ~R 145 The types and numbers of the substituents on the phenyl groups having the formula (I) may be the same or different.

[0093] [ka]

[0094] In addition, the above general formula (G h2 3) In R 101 ~R 105 each independently represents one of hydrogen, an alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 6 to 12 carbon atoms, and a substituted or unsubstituted phenyl group.

[0095] In addition, the above general formula (G h2 1)~(G h2 3) and R 106 , R 107 and R 108 Each independently represents an alkyl group having 1 to 4 carbon atoms, and v represents an integer of 0 to 4. When v is 2 or more, a plurality of R 108 may be the same or different. 111 ~R 115One of R is a substituent represented by the above general formula (g1), and the rest each independently represent one of hydrogen, an alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted phenyl group. 121 ~R 125 One of R is a substituent represented by the above general formula (g2), and the remaining R each independently represent one of hydrogen, an alkyl group having 1 to 6 carbon atoms, and a phenyl group substituted with an alkyl group having 1 to 6 carbon atoms. 131 ~R 135 Each of R independently represents one of hydrogen, an alkyl group having 1 to 6 carbon atoms, and a phenyl group substituted with an alkyl group having 1 to 6 carbon atoms. 111 ~R 115 , R 121 ~R 125 and R 131 ~R 135 At least three of the R 111 ~R 115 The number of substituted or unsubstituted phenyl groups in R is 1 or less, 121 ~R 125 and R 131 ~R 135 In R, the number of phenyl groups substituted with alkyl groups having 1 to 6 carbon atoms is 1 or less. 112 and R 114 , R 122 and R 124 , and R 132 and R 134 In at least two of the three combinations, at least one R is other than hydrogen.

[0096] Specifically, N,N-bis(4-cyclohexylphenyl)-N-(9,9-dimethyl-9H-fluoren-2-yl)amine (abbreviation: dchPAF), N-(4-cyclohexylphenyl)-N-(3'',5''-ditertiarybutyl-1,1''-biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)amine (abbreviation: mmtBuBichPAF), N-(3,3'',5,5''-tetra-t-butyl-1,1':3',1''-terphenyl-5'-yl)-N-(4-cyclohexylphenyl)-9,9- Dimethyl-9H-fluoren-2-amine (abbreviation: mmtBumTPchPAF), N-[(3,3',5'-t-butyl)-1,1'-biphenyl-5-yl]-N-(4-cyclohexylphenyl)-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: mmtBumBichPAF), N-(1,1'-biphenyl-2-yl)-N-[(3,3',5'-tri-t-butyl)-1,1'-biphenyl-5-yl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: mmtBumBioFBi), N-(4-tert-butyl) N-(1,1'-biphenyl-2-yl)-N-(3,3'',5',5''-tetra-t-butyl-1,1':3',1''-terphenyl-5-yl)-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: mmtBumTPtBuPAF), N-(1,1'-biphenyl-2-yl)-N-(3,3'',5',5''-tetra-t-butyl-1,1':3',1''-terphenyl-5-yl)-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: mmtBumTPoFBi-02), N-(4-cyclohexylphenyl)-N-(3,3'',5' ,5''-tetra-t-butyl-1,1':3',1''-terphenyl-5-yl)-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: mmtBumTPchPAF-02), N-(1,1'-biphenyl-2-yl)-N-(3'',5',5''-tri-t-butyl-1,1':3',1''-terphenyl-5-yl)-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: mmtBumTPoFBi-03), N-(4-cyclohexylphenyl)-N-(3'',5',5''-tri-t-butyl-1,1':3',1'-terphenyl-5-yl)-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: mmtBumTPchPAF-03) can be used as a material with hole transport properties.

[0097] <Configuration Example 2 of Light-Emitting Device 150> The light-emitting device 150 described in this embodiment also includes a layer 104 .

[0098] Example of Layer 104 The layer 104 includes a region sandwiched between the electrode 551G(i,j) and the unit 103, and includes a material HT1 and a material AM having electron acceptor properties. The layer 104 can be referred to as a hole injection layer. For example, a material having hole injection properties can be used for the layer 104.

[0099] The material HT1 has a HOMO level HOMO1 (see FIG. 1B). For example, a material having a HOMO level of -5.7 eV or more and -5.3 eV or less, more preferably a material having a HOMO level of -5.7 eV or more and -5.35 eV or less, can be used for the material HT1. The HOMO level is the energy level of the highest occupied molecular orbital (HOMO).

[0100] <<Configuration Example 2 of Layer 112>> Layer 112 comprises region 112 A and region 112 B. Region 112 A includes material HT1.

[0101] Region 112B comprises the portion sandwiched between layer 111 and region 112A, and region 112B includes material HT2.

[0102] The material HT2 has a HOMO level HOMO2 (see FIG. 1B). For example, a material whose HOMO level is in the range of −0.2 eV to 0 eV relative to the HOMO level HOMO1 can be used as the material HT2.

[0103] <<Configuration Example 2 of Layer 113>> The layer 113 includes a material ET. The material ET has a refractive index n2, which is 1.5 to 1.75 in the wavelength range of 455 nm to 465 nm, or 1.45 to 1.70 at 633 nm.

[0104] For example, a material having electron transport properties and an ordinary refractive index of 1.50 or more and 1.75 or less in the blue light emission region (455 nm or more and 465 nm or less), or an ordinary refractive index of 1.45 or more and 1.70 or less in the 633 nm light that is typically used to measure refractive index, can be used as material ET.

[0105] [Electron transporting materials] One example of the material having electron transport properties is an organic compound having at least one six-membered heteroaromatic ring containing one to three nitrogen atoms, a plurality of aromatic hydrocarbon rings each having 6 to 14 carbon atoms forming the ring, at least two of the aromatic hydrocarbon rings being benzene rings, and a plurality of hydrocarbon groups bonding via sp3 hybrid orbitals.

[0106] In addition, in such an organic compound, the ratio of the number of carbon atoms forming bonds with sp3 hybrid orbitals to the total number of carbon atoms in the molecule of the organic compound is preferably 10% or more and 60% or less, more preferably 10% or more and 50% or less. 1 In the results of measuring the organic compound by H-NMR, the integral value of signals below 4 ppm is preferably at least half the integral value of signals at 4 ppm or higher.

[0107] It is preferable that all of the hydrocarbon groups forming bonds through sp3 hybrid orbitals possessed by the organic compound are bonded to the aromatic hydrocarbon ring having 6 to 14 carbon atoms forming the ring, and that the LUMO of the organic compound is not distributed in the aromatic hydrocarbon ring.

[0108] The organic compound having the electron transport property is a compound represented by the following general formula (G e1 1) or (G e1The organic compound represented by 2) is preferred.

[0109] [ka]

[0110] In the formula, A represents a 6-membered heteroaromatic ring containing 1 to 3 nitrogen atoms, and is preferably a pyridine ring, a pyrimidine ring, a pyrazine ring, a pyridazine ring, or a triazine ring.

[0111] Also, R 200 is hydrogen, an alkyl group having 1 to 6 carbon atoms, an alicyclic group having 3 to 10 carbon atoms, or a group represented by the formula (G e1 1-1).

[0112] R 201 ~R 215 At least one of R is a phenyl group having a substituent, and the others each independently represent any one of hydrogen, an alkyl group having 1 to 6 carbon atoms, an alicyclic group having 3 to 10 carbon atoms, a substituted or unsubstituted ring-forming aromatic hydrocarbon group having 6 to 14 carbon atoms, and a substituted or unsubstituted pyridyl group. 201 , R 203 , R 205 , R 206 , R 208 , R 210 , R 211 , R 213 and R 215 is preferably hydrogen. The phenyl group having a substituent has one or two substituents, each of which is independently any one of an alkyl group having 1 to 6 carbon atoms, an alicyclic group having 3 to 10 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 14 carbon atoms in a ring.

[0113] In addition, the above general formula (G e1 The organic compound represented by 1) has a plurality of hydrocarbon groups selected from alkyl groups having 1 to 6 carbon atoms and alicyclic groups having 3 to 10 carbon atoms, and the ratio of the total number of carbon atoms forming bonds with sp3 hybrid orbitals to the total number of carbon atoms in the molecule is 10% or more and 60% or less.

[0114] In addition, the organic compound having the electron transport property is a compound represented by the following general formula (G e1 The organic compound represented by 2) is preferred.

[0115] [ka]

[0116] In the formula, Q 1 ~Q 3 2 or 3 of the groups represent N, and the Q 1 ~Q 3 If two of the groups are N, the remaining group represents CH.

[0117] Also R 201 ~R 215 At least one of R is a phenyl group having a substituent, and the others each independently represent any one of hydrogen, an alkyl group having 1 to 6 carbon atoms, an alicyclic group having 3 to 10 carbon atoms, a substituted or unsubstituted ring-forming aromatic hydrocarbon group having 6 to 14 carbon atoms, and a substituted or unsubstituted pyridyl group. 201 , R 203 , R 205 , R 206 , R 208 , R 210 , R 211 , R 213 and R 215 is preferably hydrogen. The phenyl group having a substituent has one or two substituents, each of which is independently any one of an alkyl group having 1 to 6 carbon atoms, an alicyclic group having 3 to 10 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 14 carbon atoms in a ring.

[0118] In addition, the above general formula (G e1 The organic compound represented by 2) preferably has a plurality of hydrocarbon groups selected from alkyl groups having 1 to 6 carbon atoms and alicyclic groups having 3 to 10 carbon atoms, and the ratio of the number of carbon atoms forming bonds via sp3 hybrid orbitals to the total number of carbon atoms in the molecule is 10% or more and 60% or less.

[0119] In addition, the above general formula (G e1 1) or (G e1 In the organic compound represented by formula (G e1 1-2) is preferred.

[0120] [ka]

[0121] In the formula, α represents a substituted or unsubstituted phenylene group, and is preferably a meta-substituted phenylene group. Furthermore, when the meta-substituted phenylene group has one substituent, the substituent is preferably also substituted at the meta-position. The substituent is preferably an alkyl group having 1 to 6 carbon atoms or an alicyclic group having 3 to 10 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms, and even more preferably a t-butyl group.

[0122] R 220 represents an alkyl group having 1 to 6 carbon atoms, an alicyclic group having 3 to 10 carbon atoms, or a substituted or unsubstituted aromatic hydrocarbon group having 6 to 14 carbon atoms in a ring.

[0123] Furthermore, j and k represent 1 or 2. When j is 2, the multiple α may be the same or different. When k is 2, the multiple R 220 may be the same or different. 220 is preferably a phenyl group, and is a phenyl group having an alkyl group having 1 to 6 carbon atoms or an alicyclic group having 3 to 10 carbon atoms at one or both of the two meta positions. The substituents that the phenyl group has at one or both of the two meta positions are more preferably alkyl groups having 1 to 6 carbon atoms, and even more preferably t-butyl groups.

[0124] Specifically, 2-{(3',5'-di-tert-butyl)-1,1'-biphenyl-3-yl}-4,6-bis(3,5-di-tert-butylphenyl)-1,3,5-triazine (abbreviation: mmtBumBP-dmmtBuPTzn), 2-{(3',5'-di-tert-butyl)-1,1'-biphenyl-3-yl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mmtBumBPTzn), 2-(3,3'',5,5''-tetra-tert-butyl-1,1':3',1''-phenyl-5'-yl)-4,6-diphenyl- Examples of materials that can be used as electron-transporting materials include 1,3,5-triazine (abbreviation: mmtBumTPTzn), 2-{(3',5'-di-tert-butyl)-1,1'-biphenyl-3-yl}-4,6-bis(3,5-di-tert-butylphenyl)-1,3-pyrimidine (abbreviation: mmtBumBP-dmmtBuPPm), and 2-(3,3'',5',5''-tetra-tert-butyl-1,1':3',1''-terphenyl-5-yl)-4,6-diphenyl-1,3,5-triazine (abbreviation: mmtBumTPTzn-02).

[0125] This can increase the luminous efficiency, or can improve not only the efficiency but also the reliability, thereby providing a novel light-emitting device that is highly convenient, useful, and reliable.

[0126] For example, when the square root of the electric field strength [V / cm] is 600, the electron mobility is 1 × 10 -7 cm 2 / Vs or more 5×10 -5 cm 2 A material having a conductivity of 1 / Vs or less can be used as the material ET. By suppressing the electron transport property in the electron transport layer, the amount of electrons injected into the light-emitting layer can be controlled. Alternatively, the light-emitting layer can be prevented from becoming an electron-excess state.

[0127] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0128] (Embodiment 2) In this embodiment, a structure of a light-emitting device 150 of one embodiment of the present invention will be described with reference to FIG. 1A.

[0129] <Configuration Example of Light-Emitting Device 150> The light-emitting device 150 includes an electrode 551G(i,j), an electrode 552, and a unit 103.

[0130] <<Example of Unit 103 configuration>> The unit 103 includes a layer 111 , a layer 112 and a layer 113 .

[0131] <<Configuration Example 1 of Layer 111>> A luminescent material may be used in layer 111 .

[0132] [Fluorescent substances] A fluorescent material can be used for the layer 111. For example, the fluorescent materials exemplified below can be used for the layer 111. However, the present invention is not limited to these, and various known fluorescent materials can be used for the layer 111.

[0133] Specifically, 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren- 9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4 -(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra(tert-butyl)perylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis[N,N',N'-triphenyl-1,4-phenylenediamine] (abbreviation: DPABPA), N ,9-Diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: 2PCAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), N,N,N',N',N'',N'',N''',N'''-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), Coumarin 30, N-(9,10-diphenyl-2-anthryl)-N,9-Diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAPA), N-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAB PhA), 9,10-bis(1,1'-biphenyl-2-yl)-N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracen-9-amine (abbreviation: DPhAPhA), Coumarin 545T, N,N'-diphenylquinacridone, (abbreviation: DPQd), rubrene, 5,12-bis(1,1'-biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6 -methyl-4H-pyran-4-ylidene)propanedinitrile (abbreviation: DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine amine (abbreviation: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB),6-Bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCJTM), N,N'-(pyren-1,6-diyl)bis[(6,N-diphenylbenzo[b]naphtho[1 ,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), 3,10-bis[N-(9-phenyl-9H-carbazol-2-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10PCA2Nbf(IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02), etc. can be used.

[0134] In particular, condensed aromatic diamine compounds, such as pyrenediamine compounds 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03, are preferred because they have high hole trapping properties and are excellent in luminous efficiency or reliability.

[0135] [Phosphorescent material 1] Furthermore, a phosphorescent material can be used for the layer 111. For example, the phosphorescent materials exemplified below can be used for the layer 111. However, the present invention is not limited thereto, and various known phosphorescent materials can be used for the layer 111.

[0136] Specifically, an organometallic iridium complex having a 4H-triazole skeleton or the like can be used for the layer 111. Specifically, tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp)3]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz)3]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(iPrptz-3b)3]), or the like can be used.

[0137] Alternatively, for example, an organometallic iridium complex having a 1H-triazole skeleton can be used, such as tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(Mptz1-mp)3]) or tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Prptz1-Me)3]).

[0138] Alternatively, for example, an organometallic iridium complex having an imidazole skeleton can be used, such as fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpmi)3]) or tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviation: [Ir(dmpimpt-Me)3]).

[0139] Alternatively, for example, an organometallic iridium complex having a phenylpyridine derivative having an electron-withdrawing group as a ligand can be used. Specifically, bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’]iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ]iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C 2’}iridium(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ] Iridium(III) acetylacetonate (abbreviation: FIracac), etc. can be used.

[0140] These compounds exhibit blue phosphorescence and have a peak emission wavelength between 440 nm and 520 nm.

[0141] [Phosphorescent material 2] Alternatively, for example, an organometallic iridium complex having a pyrimidine skeleton can be used for the layer 111. Specifically, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)3]), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)2 (acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm)2(acac)]), (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2(acac)]), and the like can be used.

[0142] Alternatively, for example, an organometallic iridium complex having a pyrazine skeleton can be used, such as (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-Me)2(acac)]), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-iPr)2(acac)]), etc.

[0143] In addition, for example, an organometallic iridium complex having a pyridine skeleton can be used. Specifically, tris(2-phenylpyridinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), bis(benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [Ir(bzq)2(acac)]), tris(benzo[h]quinolinato)iridium(III) (abbreviation: [Ir(bzq)3]), tris(2-phenylquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinolinato-N,C 2’ ) iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(acac)]), [2-d3-methyl-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridyl-κN2)phenyl-κ]iridium(III) (abbreviation: [Ir(5mppy-d3)2(mbfpypy-d3)]), [2-d3-methyl-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir(ppy)2(mbfpypy-d3)]), and the like can be used.

[0144] Furthermore, for example, rare earth metal complexes can be used, such as tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: [Tb(acac)3(Phen)]).

[0145] These compounds mainly exhibit green phosphorescence, with a peak emission wavelength between 500 nm and 600 nm. Organometallic iridium complexes having a pyrimidine skeleton are particularly preferred because they are remarkably superior in reliability and luminous efficiency.

[0146] [Phosphorescent material 3] Alternatively, for example, an organometallic iridium complex having a pyrimidine skeleton can be used for the layer 111. Specifically, (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), bis[4,6-di(naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]), or the like can be used.

[0147] Alternatively, for example, an organometallic iridium complex having a pyrazine skeleton can be used, such as (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr)2(acac)]), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr)2(dpm)]), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]), etc.

[0148] In addition, for example, an organometallic iridium complex having a pyridine skeleton or a quinoline skeleton can be used. Specifically, tris(1-phenylisoquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(piq)3]), bis(1-phenylisoquinolinato-N,C 2’ ) iridium(III) acetylacetonate (abbreviation: [Ir(piq)2(acac)]), etc. can be used.

[0149] Also, for example, platinum complexes can be used, such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (abbreviation: PtOEP).

[0150] Furthermore, for example, rare earth metal complexes can be used, such as tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM)3(Phen)]), tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: [Eu(TTA)3(Phen)]), and the like.

[0151] These compounds exhibit red phosphorescence, with an emission peak between 600 nm and 700 nm. Organometallic iridium complexes with pyrazine skeletons emit red light with a chromaticity suitable for use in display devices.

[0152] [Substances that exhibit thermally activated delayed fluorescence (TADF)] A variety of known TADF materials can be used for the light-emitting material.

[0153] TADF materials have a small difference in energy level between the lowest excited singlet state (S1) and the lowest excited triplet state (T1), allowing for the conversion of triplet excitation energy to singlet excitation energy through reverse intersystem crossing. Therefore, triplet excitation energy can be upconverted to singlet excitation energy (reverse intersystem crossing) using only a small amount of thermal energy, enabling the efficient generation of singlet excited states. Furthermore, triplet excitation energy can be converted into luminescence.

[0154] Furthermore, exciplexes (also known as exciplexes), which form an excited state with two types of substances, have an extremely small difference between the S1 and T1 levels and function as TADF materials that can convert triplet excitation energy into singlet excitation energy.

[0155] The phosphorescence spectrum observed at low temperatures (for example, 77 K to 10 K) can be used as an indicator of the T1 level. For a TADF material, when a tangent line is drawn at the base of the fluorescence spectrum on the short wavelength side and the energy of the wavelength of the extrapolated line is defined as the S1 level, and a tangent line is drawn at the base of the phosphorescence spectrum on the short wavelength side and the energy of the wavelength of the extrapolated line is defined as the T1 level, the difference between S1 and T1 is preferably 0.3 eV or less, and more preferably 0.2 eV or less.

[0156] When a TADF material is used as a light-emitting material, the S1 level of the host material is preferably higher than the S1 level of the TADF material, and the T1 level of the host material is preferably higher than the T1 level of the TADF material.

[0157] For example, TADF materials can be made of fullerene and its derivatives, acridine and its derivatives, eosin derivatives, etc. Also, metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), palladium (Pd), etc.

[0158] Specifically, the following compounds, whose structural formulas are shown below, can be used: protoporphyrin-tin fluoride complex (SnF2(Proto IX)), mesoporphyrin-tin fluoride complex (SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (SnF2(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF2(OEP)), etioporphyrin-tin fluoride complex (SnF2(Etio I)), octaethylporphyrin-platinum chloride complex (PtCl2OEP), etc.

[0159] [ka]

[0160] Furthermore, for example, a heterocyclic compound having one or both of a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring can be used as a TADF material.

[0161] Specifically, the structural formulas are shown below: 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: PCCzTzn), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl]-4 ,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10'H-spiro[acridin-9,9'-anthracene]-10'-one (abbreviation: ACRSA), etc. can be used.

[0162] [ka]

[0163] The heterocyclic compound has a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring, and therefore has high electron transport and hole transport properties, and is therefore preferred. Among the skeletons having a π-electron-deficient heteroaromatic ring, pyridine skeletons, diazine skeletons (pyrimidine skeletons, pyrazine skeletons, pyridazine skeletons), and triazine skeletons are preferred because they are stable and reliable. In particular, benzofuropyrimidine skeletons, benzothienopyrimidine skeletons, benzofuropyrazine skeletons, and benzothienopyrazine skeletons are preferred because they have high acceptor properties and good reliability.

[0164] Among skeletons having a π-electron-rich heteroaromatic ring, it is preferable to have at least one of an acridine skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a furan skeleton, a thiophene skeleton, and a pyrrole skeleton because they are stable and reliable. The dibenzofuran skeleton is preferable as the furan skeleton, and the dibenzothiophene skeleton is preferable as the thiophene skeleton. The indole skeleton, carbazole skeleton, indolocarbazole skeleton, bicarbazole skeleton, and 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton are particularly preferable as the pyrrole skeleton.

[0165] In addition, a substance in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded is particularly preferred because the electron-donating property of the π-electron-rich heteroaromatic ring and the electron-accepting property of the π-electron-deficient heteroaromatic ring are both strong, and the energy difference between the S1 level and the T1 level is small, thereby enabling efficient thermally activated delayed fluorescence.Instead of the π-electron-deficient heteroaromatic ring, an aromatic ring bonded to an electron-withdrawing group such as a cyano group may be used.In addition, an aromatic amine skeleton, a phenazine skeleton, or the like may be used as the π-electron-rich skeleton.

[0166] Furthermore, examples of the π-electron-deficient skeleton that can be used include a xanthene skeleton, a thioxanthene dioxide skeleton, an oxadiazole skeleton, a triazole skeleton, an imidazole skeleton, an anthraquinone skeleton, a boron-containing skeleton such as phenylborane or boranthrene, an aromatic ring or heteroaromatic ring having a nitrile group or a cyano group such as benzonitrile or cyanobenzene, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, and a sulfone skeleton.

[0167] In this way, a π-electron-deficient skeleton and a π-electron-rich skeleton can be used in place of at least one of a π-electron-deficient heteroaromatic ring and a π-electron-rich heteroaromatic ring.

[0168] <<Configuration Example 2 of Layer 111>> A material having a carrier transport property can be used as the host material. For example, a material having a hole transport property, a material having an electron transport property, a substance exhibiting thermally activated delayed fluorescence, a material having an anthracene skeleton, a mixed material, or the like can be used as the host material.

[0169] [Hole-transporting materials] As a material having hole transport properties, 1×10 -6 cm 2 It is preferable that the hole mobility is / Vs or more.

[0170] The hole-transporting material is preferably an amine compound or an organic compound having a π-electron-rich heteroaromatic ring skeleton, such as a compound having an aromatic amine skeleton, a compound having a carbazole skeleton, a compound having a thiophene skeleton, or a compound having a furan skeleton.

[0171] Examples of compounds having an aromatic amine skeleton include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (abbreviation: TPD), 4,4'-bis[N-(spiro-9,9'-bifluoren-2-yl)-N-phenylamino]biphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), and 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP). , 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]spiro-9,9'-bifluoren-2-amine (abbreviation: PCBASF), and the like can be used.

[0172] Examples of compounds having a carbazole skeleton that can be used include 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), and 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP).

[0173] Examples of compounds having a thiophene skeleton that can be used include 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV).

[0174] Examples of compounds having a furan skeleton that can be used include 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II), 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II), and the like.

[0175] Among the above, compounds having an aromatic amine skeleton or compounds having a carbazole skeleton are preferable because they have good reliability, high hole transport properties, and contribute to reducing the driving voltage.

[0176] [Electron transporting materials] As a material having electron transport properties, a metal complex or an organic compound having a π-electron-deficient heteroaromatic ring skeleton is preferred. As an organic compound having a π-electron-deficient heteroaromatic ring skeleton, for example, a heterocyclic compound having a polyazole skeleton, a heterocyclic compound having a diazine skeleton, or a heterocyclic compound having a pyridine skeleton is preferred. In particular, a heterocyclic compound having a diazine skeleton or a heterocyclic compound having a pyridine skeleton is preferred because of its high reliability. Furthermore, a heterocyclic compound having a diazine (pyrimidine or pyrazine) skeleton has high electron transport properties and can reduce the driving voltage.

[0177] Examples of metal complexes that can be used include bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), and bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ).

[0178] Examples of heterocyclic compounds having a polyazole skeleton include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: O XD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), etc. can be used.

[0179] Examples of heterocyclic compounds having a diazine skeleton include 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h ]quinoxaline (abbreviation: 2mCzBPDBq), 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzo[h]quinazoline (abbreviation: 4,8mDBtP2Bqn), etc. can be used.

[0180] Examples of heterocyclic compounds having a pyridine skeleton include 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), and the like.

[0181] Examples of heterocyclic compounds having a triazine skeleton include 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)-1,1'-biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 2-[(1,1'-biphenyl)-4-yl]-4-phenyl-6-[9,9'-spirobi(9H-fluoren)-2-yl]-1,3,5-triazine (abbreviation: BP- SFTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), 2-{3-[3-(benzo"b"naphtho[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn-02), and the like can be used.

[0182] [Substances that exhibit thermally activated delayed fluorescence (TADF)] A variety of known TADF materials can be used as the host material.

[0183] When a TADF material is used as a host material, triplet excitation energy generated in the TADF material is converted to singlet excitation energy through reverse intersystem crossing, and the energy is then transferred to the light-emitting material, thereby improving the luminous efficiency of the light-emitting device. In this case, the TADF material functions as an energy donor, and the light-emitting material functions as an energy acceptor.

[0184] This is very effective when the luminescent material is a fluorescent luminescent material. In this case, in order to obtain high luminous efficiency, the S1 level of the TADF material is preferably higher than the S1 level of the fluorescent luminescent material. In addition, the T1 level of the TADF material is preferably higher than the S1 level of the fluorescent luminescent material. Therefore, the T1 level of the TADF material is preferably higher than the T1 level of the fluorescent luminescent material.

[0185] It is also preferable to use a TADF material that emits light that overlaps with the wavelength of the lowest-energy absorption band of the fluorescent material, as this allows for smooth transfer of excitation energy from the TADF material to the fluorescent material, resulting in efficient light emission.

[0186] Furthermore, to efficiently generate singlet excitation energy from triplet excitation energy through reverse intersystem crossing, carrier recombination is preferred in the TADF material. Furthermore, it is preferable that the triplet excitation energy generated in the TADF material does not transfer to triplet excitation energy in the fluorescent material. To achieve this, the fluorescent material preferably has a protecting group around the luminophore (the skeleton responsible for light emission) of the fluorescent material. The protecting group is preferably a substituent without a π bond, and is preferably a saturated hydrocarbon. Specific examples include alkyl groups with 3 to 10 carbon atoms, substituted or unsubstituted cycloalkyl groups with 3 to 10 carbon atoms, and trialkylsilyl groups with 3 to 10 carbon atoms. It is even more preferable to have multiple protecting groups. Substituents without a π bond have poor carrier transport properties, so they can increase the distance between the TADF material and the luminophore of the fluorescent material without significantly affecting carrier transport or carrier recombination.

[0187] Here, the term "luminophore" refers to an atomic group (skeleton) that causes light emission in a fluorescent substance. The luminophore preferably has a skeleton having a π bond, preferably contains an aromatic ring, and preferably has a fused aromatic ring or a fused heteroaromatic ring.

[0188] Examples of the fused aromatic ring or fused heteroaromatic ring include a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, a phenoxazine skeleton, a phenothiazine skeleton, etc. In particular, fluorescent substances having a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, or a naphthobisbenzofuran skeleton are preferred because of their high fluorescence quantum yield.

[0189] For example, a TADF material that can be used as a light-emitting material can be used as a host material.

[0190] [Materials with anthracene skeleton] When a fluorescent substance is used as the light-emitting substance, a material having an anthracene skeleton is particularly suitable as a host material. When a material having an anthracene skeleton is used as a host material for a fluorescent light-emitting substance, an emitting layer having good luminous efficiency and durability can be realized.

[0191] As a substance having an anthracene skeleton used as a host material, a substance having a diphenylanthracene skeleton, particularly a substance having a 9,10-diphenylanthracene skeleton, is preferable because it is chemically stable.

[0192] Furthermore, a host material having a carbazole skeleton is preferable because it enhances hole injection and transport properties. In particular, a host material containing a dibenzocarbazole skeleton is preferable because its HOMO is shallower by about 0.1 eV than that of carbazole, making it easier for holes to enter, and it also has excellent hole transport properties and high heat resistance. Therefore, a substance having both a 9,10-diphenylanthracene skeleton and a carbazole skeleton (or a benzocarbazole skeleton or dibenzocarbazole skeleton) is preferable as a host material. Note that, from the viewpoint of the hole injection and transport properties, a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of the carbazole skeleton.

[0193] Examples of substances having an anthracene skeleton include 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 3-[4-(1-naphthyl)-phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g ]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-{4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4'-yl}anthracene (abbreviation: FLPPA), 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), and the like can be used.

[0194] In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA exhibit very good properties.

[0195] [Mixed material composition example 1] A mixture of multiple substances can be used as the host material. For example, a mixture of a material having an electron-transporting property and a material having a hole-transporting property can be suitably used as the host material. By mixing a material having an electron-transporting property and a material having a hole-transporting property, the carrier transport property of the layer 111 can be easily adjusted. Furthermore, the recombination region can be easily controlled. The weight ratio of the material having a hole-transporting property to the material having an electron-transporting property contained in the mixed material may be 1:19 to 19:1 (material having a hole-transporting property:material having an electron-transporting property).

[0196] [Mixed material composition example 2] Furthermore, a material containing a phosphorescent material can be used as a host material. When a fluorescent material is used as an emitting material, the phosphorescent material can be used as an energy donor that provides excitation energy to the fluorescent material.

[0197] A mixed material containing a material that forms an exciplex can be used as the host material. For example, a material whose emission spectrum of the formed exciplex overlaps with the wavelength of the lowest energy absorption band of the light-emitting substance can be used as the host material. This allows smooth energy transfer, improving the luminous efficiency and reducing the driving voltage.

[0198] At least one of the materials forming the exciplex may be a phosphorescent material, which allows efficient conversion of triplet excitation energy into singlet excitation energy through reverse intersystem crossing.

[0199] As a combination of materials that efficiently form an exciplex, it is preferable that the HOMO level of the hole-transporting material is equal to or higher than the HOMO level of the electron-transporting material. It is also preferable that the LUMO level of the hole-transporting material is equal to or higher than the LUMO level of the electron-transporting material. The LUMO and HOMO levels of the materials can be derived from the electrochemical properties (reduction potential and oxidation potential) of the materials measured by cyclic voltammetry (CV).

[0200] The formation of exciplexes can be confirmed by, for example, comparing the emission spectra of a hole-transporting material, an electron-transporting material, and a mixed film of these materials and observing the phenomenon that the emission spectrum of the mixed film is shifted to longer wavelengths than the emission spectra of each material (or has a new peak at longer wavelengths). Alternatively, it can be confirmed by comparing the transient photoluminescence (PL) of a hole-transporting material, the transient PL of an electron-transporting material, and a mixed film of these materials and observing differences in transient response, such as the transient PL lifetime of the mixed film having a longer-lived component or a larger proportion of delayed components than the transient PL lifetimes of the individual materials. The above-mentioned transient PL can also be interpreted as transient electroluminescence (EL). In other words, the formation of exciplexes can also be confirmed by comparing the transient EL of a hole-transporting material, the transient EL of an electron-transporting material, and a mixed film of these materials and observing differences in transient response.

[0201] <<Configuration Example 1 of Layer 113>> A material having an electron transporting property can be used for the layer 113 .

[0202] [Electron transporting materials] For example, a material having an electron-transporting property that can be used for the layer 111 can be used for the layer 113. Specifically, a material having an electron-transporting property that can be used for a host material can be used for the layer 113.

[0203] [Materials with anthracene skeleton] Alternatively, an organic compound having an anthracene skeleton can be used for the layer 113. In particular, an organic compound having both an anthracene skeleton and a heterocyclic skeleton can be suitably used.

[0204] For example, an organic compound containing both an anthracene skeleton and a nitrogen-containing five-membered ring skeleton, or an organic compound containing both an anthracene skeleton and a nitrogen-containing six-membered ring skeleton, can be used. Alternatively, an organic compound containing both an anthracene skeleton and a nitrogen-containing five-membered ring skeleton containing two heteroatoms in the ring, or an organic compound having a nitrogen-containing six-membered ring skeleton containing two heteroatoms in the ring, can be used. Specifically, a pyrazole ring, an imidazole ring, an oxazole ring, a thiazole ring, a pyrazine ring, a pyrimidine ring, a pyridazine ring, or the like can be suitably used as the heterocyclic skeleton.

[0205] [Example of mixed material composition] Alternatively, a mixture of multiple substances can be used for the layer 113. Specifically, a mixture of an alkali metal, an alkali metal compound, or an alkali metal complex with a substance having an electron-transporting property can be used. For example, 2-phenyl-3-{4-[10-(3-pyridyl)-9-anthryl]phenyl}quinoxaline (abbreviation: PyA1PQ) can be used as the substance having an electron-transporting property in the mixture of multiple substances. In particular, a composite material can be preferably used for the layer 104 when the composite material contains a substance having a relatively deep HOMO level of −5.7 eV or more and −5.4 eV or less. The HOMO level of the material having an electron-transporting property is more preferably −6.0 eV or more. This can improve the reliability of the light-emitting device.

[0206] The metal complex preferably contains, for example, an 8-hydroxyquinolinato structure. When the metal complex contains an 8-hydroxyquinolinato structure, its methyl-substituted derivatives (e.g., 2-methyl-substituted or 5-methyl-substituted derivatives) can also be used. Specifically, 8-hydroxyquinolinato-lithium (abbreviated as Liq), 8-hydroxyquinolinato-sodium (abbreviated as Naq), etc. can be used. In particular, complexes of monovalent metal ions, especially lithium complexes, are preferred, with Liq being more preferred.

[0207] Furthermore, it is preferable that the alkali metal or the simple substance, compound, or complex of the alkali metal exists with a concentration difference (including zero) in the thickness direction of the layer 113.

[0208] Example of Layer 112 A material having a hole transporting property can be used for the layer 112 .

[0209] [Hole-transporting materials] As a material having hole transport properties, 1×10 -6 cm 2 It is preferable that the hole mobility is / Vs or more.

[0210] For example, a material having a hole-transporting property that can be used for the layer 111 can be used for the layer 112. Specifically, a material having a hole-transporting property that can be used for a host material can be used for the layer 112.

[0211] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0212] (Embodiment 3) In this embodiment, a structure of a light-emitting device 150 of one embodiment of the present invention will be described with reference to FIG. 1A.

[0213] <Configuration Example of Light-Emitting Device 150> The light-emitting device 150 includes an electrode 551G(i,j), an electrode 552, and a unit 103. The light-emitting device 150 also includes a layer 104 and a layer 105.

[0214] <<Configuration example of electrode 551G(i,j)>> For example, a conductive material can be used for the electrode 551G(i,j). Specifically, a metal, an alloy, a conductive compound, or a mixture thereof can be used for the electrode 551G(i,j). For example, a material having a work function of 4.0 eV or more can be preferably used.

[0215] For example, indium oxide-tin oxide (ITO), indium oxide-tin oxide containing silicon or silicon oxide, indium oxide-zinc oxide, indium oxide containing tungsten oxide and zinc oxide (IWZO), etc. can be used.

[0216] Also, for example, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), or nitrides of metal materials (e.g., titanium nitride), etc., can be used. Alternatively, graphene can be used.

[0217] Example of Layer 104 Layer 104 comprises the area sandwiched between electrode 551G(i,j) and unit 103.

[0218] For example, a material having a hole-injecting property can be used for the layer 104. Specifically, a substance having an acceptor property and a composite material can be used for the layer 104. Note that an organic compound and an inorganic compound can be used as the substance having an acceptor property. When an electric field is applied, the substance having an acceptor property can extract electrons from the adjacent hole-transport layer (or hole-transport material).

[0219] [Example 1 of materials with hole injection properties] A substance having an acceptor property can be used as a material having a hole-injecting property. This can facilitate the injection of holes from the electrode 551G(i,j), for example, or can reduce the driving voltage of the light-emitting device.

[0220] For example, a compound having an electron-withdrawing group (a halogen group or a cyano group) can be used as a substance having acceptor properties. Note that organic compounds having acceptor properties are easy to evaporate and form into films. This can increase the productivity of light-emitting devices.

[0221] Specifically, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCNNQ), 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyren-2-ylidene)malononitrile, and the like can be used as materials having hole injection properties.

[0222] In particular, compounds such as HAT-CN in which an electron-withdrawing group is bonded to a condensed aromatic ring having a plurality of heteroatoms are preferred because they are thermally stable.

[0223] Radialene derivatives having an electron-withdrawing group (particularly a halogen group such as a fluoro group or a cyano group) are also preferred because of their extremely high electron-accepting properties.

[0224] Specifically, α,α',α''-1,2,3-cyclopropanetriylidene tris[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α''-1,2,3-cyclopropanetriylidene tris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], α,α',α''-1,2,3-cyclopropanetriylidene tris[2,3,4,5,6-pentafluorobenzeneacetonitrile], etc. can be used.

[0225] Furthermore, molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, or the like can be used as the substance having acceptor properties.

[0226] Additionally, phthalocyanine complex compounds such as phthalocyanine (abbreviation: HPc) or copper phthalocyanine (CuPc), and compounds having an aromatic amine skeleton such as 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB) and N,N'-bis{4-[bis(3-methylphenyl)amino]phenyl}-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (abbreviation: DNTPD) can be used.

[0227] Furthermore, polymers such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) can also be used.

[0228] [Example 2 of materials with hole injection properties] A composite material can be used as a material with hole injection properties. For example, a composite material in which a material with hole transport properties contains a substance with acceptor properties can be used. This allows a wide range of materials to be used to form the electrode, regardless of the work function. Alternatively, not only materials with a high work function but also materials with a low work function can be used for the electrode 551G(i,j).

[0229] Various organic compounds can be used as the material having hole transport properties for the composite material. For example, compounds having an aromatic amine skeleton, carbazole derivatives, aromatic hydrocarbons, and polymer compounds (oligomers, dendrimers, polymers, etc.) can be used as the material having hole transport properties for the composite material. -6 cm 2 A substance having a hole mobility of 1 / Vs or more can be suitably used.

[0230] Furthermore, for example, a substance having a relatively deep HOMO level of -5.7 eV or more and -5.4 eV or less can be suitably used as the hole-transporting material of the composite material, which can facilitate injection of holes into the hole-transporting layer or improve the reliability of the light-emitting device.

[0231] Examples of compounds having an aromatic amine skeleton that can be used include N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N'-bis{4-[bis(3-methylphenyl)amino]phenyl}-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (abbreviation: DNTPD), and 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B).

[0232] Examples of carbazole derivatives include 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenyl Carbazole (abbreviation: PCzPCN1), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(N-carbazolyl)]phenyl-10-phenylanthracene (abbreviation: CzPA), 1,4-bis[4-(N-carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene, etc. can be used.

[0233] Examples of aromatic hydrocarbons include 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 2-tert-butyl-9,10-di(1-naphthyl)anthracene, 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)anthracene (abbreviation: DMNA), 2-tert-butyl 9,10-bis[2-(1-naphthyl)phenyl]anthracene, 9,10-bis[2-(1-naphthyl)phenyl]anthracene, 2,3,6,7-tetramethyl-9,10-di(1-naphthyl)anthracene, 2,3,6,7-tetramethyl-9,10-di(2-naphthyl)anthracene, 9,9'-bianthryl, 10,10'-diphenyl-9,9'-bianthryl, 10,10'-bis(2-phenylphenyl)-9,9'-bianthryl, 10,10'-bis[(2,3,4,5,6-pentaphenyl)phenyl]-9,9'-bianthryl, anthracene, tetracene, rubrene, perylene, 2,5,8,11-tetra(tert-butyl)perylene, and the like can be used.

[0234] Examples of aromatic hydrocarbons having a vinyl group that can be used include 4,4'-bis(2,2-diphenylvinyl)biphenyl (abbreviation: DPVBi) and 9,10-bis[4-(2,2-diphenylvinyl)phenyl]anthracene (abbreviation: DPVPA).

[0235] For example, pentacene, coronene, etc. may also be used.

[0236] Examples of polymer compounds that can be used include poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviation: PTPDMA), and poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviation: Poly-TPD).

[0237] For example, a substance having a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, or an anthracene skeleton can be suitably used as a material having hole transport properties for the composite material. Also, a substance having an aromatic amine with a substituent containing a dibenzofuran ring or a dibenzothiophene ring, an aromatic monoamine with a naphthalene ring, or an aromatic monoamine in which a 9-fluorenyl group is bonded to the nitrogen of the amine via an arylene group can be used. The use of a substance having an N,N-bis(4-biphenyl)amino group can improve the reliability of light-emitting devices.

[0238] Examples of materials having hole transport properties for these composite materials include N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4'-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4''-phenyltriphenylamine (abbreviation: BnfBB1BP), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-yl, and N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-yl. benzo[b]naphtho[1,2-d]furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl] -N-phenyl-4-biphenylamine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4''-diphenyltriphenylamine (abbreviation: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-diphenyl-4''-(6;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβN B-03), 4,4'-diphenyl-4''-(7-phenyl)naphthyl-2-yltriphenylamine (abbreviated as BBAPβNB-03), 4,4'-diphenyl-4''-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviated as BBA(βN2)B), 4,4'-diphenyl-4''-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviated as BBA(βN2)B-03), 4,4'-diphenyl-4''-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviated as BBAβNαNB), 4,4'-Diphenyl-4''-(5;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenylyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4 ''-Phenyltriphenylamine (abbreviation: TPBiAβNBi), 4-phenyl-4'-(1-naphthyl)triphenylamine (abbreviation: αNBA1BP), 4,4'-bis(1-naphthyl)triphenylamine (abbreviation: αNBB1BP), 4,4'-diphenyl-4''-[4'-(carbazol-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazol-9-yl)phenyl]tris( 1,1'-biphenyl-4-yl)amine (abbreviation: YGTBi1BP-02), 4-diphenyl-4'-(2-naphthyl)-4''-{9-(4-biphenylyl)carbazole}triphenylamine (abbreviation: YGTBiβNB), N-[4-(9-phenyl-9Hcarbazol-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirobi(9H-fluorene)-2-amine (abbreviation: PCBNBSF), N,N-bis(4-biphenylyl)-9, 9'-Spirobi[9H-fluorene]-2-amine (abbreviation: BBASF), N,N-bis(1,1'-biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(1,1'-biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi(9H-fluorene)-4-amine (abbreviation: oFBiSF), N-(4-biphenyl)-N-(dibenzofuran-4-yl)-9,9-Dimethyl-9H-fluoren-2-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-[4-(9-phenyl 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)- N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]spiro-9,9'-bifluoren-2-amine (abbreviation: PCBASF), N-(1,1'-biphenyl-4-yl)-9,9-dimethyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9H-fluoren-2-amine (abbreviation: PCBBiF), N,N-bis(9,9- N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-4-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-3-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-2-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-1-amine, etc. can be used.

[0239] [Example 3 of materials with hole injection properties] A composite material containing a material with hole transport properties, a substance with acceptor properties, and a fluoride of an alkali metal or alkaline earth metal can be used as the material with hole injection properties. In particular, a composite material containing fluorine atoms at an atomic ratio of 20% or more can be preferably used. This can reduce the refractive index of the layer 104. Alternatively, a layer with a low refractive index can be formed inside the light-emitting device. Alternatively, the external quantum efficiency of the light-emitting device can be improved.

[0240] <<Configuration example of electrode 552>> For example, a conductive material can be used for the electrode 552. Specifically, a metal, an alloy, an electrically conductive compound, or a mixture thereof can be used for the electrode 552. For example, a material having a work function smaller than that of the electrode 551G(i,j) can be used for the electrode 552. Specifically, a material having a work function of 3.8 eV or less can be preferably used.

[0241] For example, the electrode 552 can be made of elements belonging to Group 1 of the periodic table, elements belonging to Group 2 of the periodic table, rare earth metals, and alloys containing these.

[0242] Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), strontium (Sr), europium (Eu), ytterbium (Yb), and alloys containing these (MgAg, AlLi) can be used for the electrode 552.

[0243] Example of Layer 105 For example, a material having an electron injecting property can be used for the layer 105. Specifically, a substance having a donor property can be used for the layer 105. Alternatively, a composite material in which a material having an electron transporting property contains a substance having a donor property can be used for the layer 105. This can facilitate electron injection from the electrode 552, for example. Alternatively, the driving voltage of the light-emitting device can be reduced. Alternatively, various conductive materials can be used for the electrode 552 regardless of the magnitude of the work function. Specifically, Al, Ag, ITO, indium oxide-tin oxide containing silicon or silicon oxide, or the like can be used for the electrode 552.

[0244] [Electron-injecting material 1] For example, alkali metals, alkaline earth metals, rare earth metals, or compounds thereof can be used as the donor substance, or organic compounds such as tetrathianaphthacene (abbreviated as TTN), nickelocene, and decamethylnickelocene can be used as the donor substance.

[0245] Specifically, alkali metal compounds (including oxides, halides, and carbonates), alkaline earth metal compounds (including oxides, halides, and carbonates), or rare earth metal compounds (including oxides, halides, and carbonates), etc., can be used as materials having electron injection properties.

[0246] Specifically, lithium oxide, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), lithium carbonate, cesium carbonate, 8-hydroxyquinolinato-lithium (abbreviation: Liq), and the like can be used as materials having electron injection properties.

[0247] [Electron-injecting material 2] For example, a composite material containing an alkali metal or alkaline earth metal or a compound thereof and a substance having an electron transporting property can be used as a material having an electron injecting property.

[0248] For example, a material having an electron transporting property that can be used for the unit 103 can be used as a material having an electron injecting property.

[0249] In addition, a material containing a microcrystalline alkali metal fluoride and a substance having electron transport properties, or a material containing a microcrystalline alkaline earth metal fluoride and a substance having electron transport properties can be used as the material having electron injection properties.

[0250] In particular, a material containing 50 wt % or more of an alkali metal fluoride or an alkaline earth metal fluoride can be preferably used. Alternatively, an organic compound having a bipyridine skeleton can be preferably used. This can reduce the refractive index of the layer 105. Alternatively, it can improve the external quantum efficiency of the light-emitting device.

[0251] [Electron-injecting material 3] Furthermore, electrides can be used as materials having electron injection properties. For example, a substance in which electrons are highly concentrated added to a mixed oxide of calcium and aluminum can be used as the material having electron injection properties.

[0252] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0253] (Fourth embodiment) In this embodiment, a structure of a light-emitting device 150 of one embodiment of the present invention will be described with reference to FIG. 2A.

[0254] FIG. 2A is a cross-sectional view illustrating a structure of a light-emitting device according to one embodiment of the present invention, which has a structure different from that illustrated in FIG. 1A.

[0255] <Configuration Example of Light-Emitting Device 150> Furthermore, light-emitting device 150 described in this embodiment includes electrode 551G(i,j), electrode 552, unit 103, and intermediate layer 106 (see FIG. 2A).

[0256] <<Configuration example of the intermediate layer 106>> Intermediate layer 106 comprises an area sandwiched between unit 103 and electrode 552, and intermediate layer 106 comprises layer 106A and layer 106B.

[0257] <<Configuration example of layer 106A>> Layer 106A has a region sandwiched between unit 103 and layer 106B. Layer 106A can be referred to as, for example, an electronic relay layer.

[0258] For example, a substance having electron transport properties can be used in the electron relay layer. This allows the layer in contact with the anode side of the electron relay layer to be spaced apart from the layer in contact with the cathode side of the electron relay layer. Alternatively, the interaction between the layer in contact with the anode side of the electron relay layer and the layer in contact with the cathode side of the electron relay layer can be reduced. Alternatively, electrons can be smoothly supplied to the layer in contact with the anode side of the electron relay layer.

[0259] For example, a substance having an electron transport property can be preferably used for the electron relay layer. Specifically, a substance having a LUMO level between the LUMO level of a substance having an acceptor property of the composite material exemplified as a material having a hole injection property and the LUMO level of a substance contained in a layer in contact with the cathode side of the electron relay layer can be preferably used for the electron relay layer.

[0260] For example, a substance having an electron transporting property and having a LUMO level in the range of −5.0 eV or more, preferably −5.0 eV or more and −3.0 eV or less, can be used for the electron-relay layer.

[0261] Specifically, phthalocyanine-based materials can be used in the electron relay layer, or metal complexes having a metal-oxygen bond and an aromatic ligand can be used in the electron relay layer.

[0262] <<Configuration example of layer 106B>> Layer 106B can be referred to as, for example, a charge generation layer. The charge generation layer has the function of supplying electrons to the anode side and holes to the cathode side when a voltage is applied. Specifically, it can supply electrons to unit 103 arranged on the anode side.

[0263] For example, a composite material exemplified as a material having a hole injection property can be used for the charge generation layer. For example, a stacked film in which a film containing the composite material and a film containing a material having a hole transport property are stacked can be used for the charge generation layer.

[0264] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0265] (Embodiment 5) In this embodiment, a structure of a light-emitting device 150 of one embodiment of the present invention will be described with reference to FIG. 2B.

[0266] FIG. 2B is a cross-sectional view illustrating a configuration of a light-emitting device according to one embodiment of the present invention, which has a configuration different from the configurations illustrated in FIGS. 1A and 2A.

[0267] <Configuration Example of Light-Emitting Device 150> The light-emitting device 150 described in this embodiment includes an electrode 551G(i,j), an electrode 552, a unit 103, an intermediate layer 106, and a unit 103(12) (see FIG. 2B). The light-emitting device 150 also includes a layer 105(12). A configuration including an intermediate layer 106 and multiple units is sometimes called a stacked light-emitting device or a tandem light-emitting device. This allows for high-luminance light emission while maintaining a low current density. Alternatively, it can improve reliability. Alternatively, it can reduce the driving voltage compared to a device with the same luminance. Alternatively, it can reduce power consumption.

[0268] 《Example of Unit 103(12)》 The unit 103 ( 12 ) comprises a region sandwiched between the intermediate layer 106 and the electrode 552 .

[0269] The configuration that can be used for unit 103 can also be used for unit 103(12). In other words, light-emitting device 150 has a plurality of stacked units. Note that the number of stacked units is not limited to two, and three or more units can be stacked.

[0270] The same configuration as unit 103 can be used for unit 103(12), or a different configuration from unit 103 can be used for unit 103(12).

[0271] For example, a configuration of an emission color different from the emission color of unit 103 can be used for unit 103(12). Specifically, a unit 103 that emits red light and green light and a unit 103(12) that emits blue light can be used. This makes it possible to provide a light-emitting device that emits light of a desired color. Alternatively, for example, a light-emitting device that emits white light can be provided.

[0272] <<Configuration example of the intermediate layer 106>> The intermediate layer 106 has a function of supplying electrons to one of the unit 103 and the unit 103(12) and holes to the other. For example, the intermediate layer 106 described in Embodiment 4 can be used.

[0273] <Method for producing light-emitting device 150> For example, each layer of the electrode 551G(i,j), the electrode 552, the unit 103, the intermediate layer 106, and the unit 103(12) can be formed using a dry method, a wet method, a vapor deposition method, a droplet discharge method, a coating method, a printing method, etc. Also, different methods can be used to form each component.

[0274] Specifically, the light-emitting device 150 can be produced using a vacuum deposition device, an inkjet device, a coating device such as a spin coater, a gravure printing device, an offset printing device, a screen printing device, or the like.

[0275] For example, the electrode can be formed by a wet method using a paste of a metal material or a sol-gel method. Specifically, an indium oxide-zinc oxide film can be formed by a sputtering method using a target containing indium oxide and 1 to 20 wt% zinc oxide added. Also, an indium oxide (IWZO) film containing tungsten oxide and zinc oxide can be formed by a sputtering method using a target containing indium oxide and 0.5 to 5 wt% tungsten oxide and 0.1 to 1 wt% zinc oxide.

[0276] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0277] (Embodiment 6) In this embodiment, a structure of a functional panel according to one embodiment of the present invention will be described with reference to FIGS.

[0278] FIG. 3A is a top view illustrating the configuration of a functional panel according to one embodiment of the present invention, and FIG. 3B is a diagram illustrating a part of FIG. 3A.

[0279] Fig. 4A is a diagram illustrating a portion of Fig. 3A, Fig. 4B is a diagram illustrating a portion of Fig. 4A, and Fig. 4C is a cross-sectional view illustrating another portion of Fig. 4A.

[0280] FIG. 5 is a circuit diagram illustrating a configuration of a pixel circuit that can be used in a functional panel according to one embodiment of the present invention.

[0281] <Configuration example 1 of function panel 700> The functional panel 700 has an area 231. The area 231 also has a set of pixels 703(i,j) (see FIG. 3A).

[0282] The functional panel 700 also has a conductive film G1(i), a conductive film S1g(j), a conductive film ANO, and a conductive film VCOM2 (see FIG. 5). The functional panel 700 also has a conductive film V0.

[0283] For example, the conductive film G1(i) is supplied with a first selection signal, and the conductive film S1g(j) is supplied with an image signal.

[0284] <<Configuration Example 1 of Pixel 703(i,j)>> The set of pixels 703(i,j) includes pixel 702G(i,j) (see FIG. 3B). Pixel 702G(i,j) includes pixel circuit 530G(i,j) and light-emitting device 550G(i,j) (see FIGS. 4A and 4B). The set of pixels 703(i,j) also includes pixel 702B(i,j), pixel 702R(i,j), and pixel 702W(i,j), where pixel 702B(i,j) includes light-emitting device 550B(i,j) and pixel 702R(i,j) includes light-emitting device 550R(i,j). Pixel 702W(i,j) also includes pixel circuit 530W(i,j) and light-emitting device 550W(i,j) (see FIG. 6).

[0285] <<Configuration example of pixel circuit 530G(i,j)>> The pixel circuit 530G(i,j) is supplied with a first selection signal, and the pixel circuit 530G(i,j) acquires an image signal based on the first selection signal. For example, the first selection signal can be supplied using the conductive film G1(i) (see FIG. 4B). Alternatively, the image signal can be supplied using the conductive film S1g(j). The operation of supplying the first selection signal and causing the pixel circuit 530G(i,j) to acquire the image signal can be referred to as "writing."

[0286] The pixel circuit 530G(i,j) includes a switch SW21, a transistor M21, a capacitor C22, and a node N21 (see FIG. 5). The pixel circuit 530G(i,j) also includes a node N22 and a switch SW23.

[0287] The transistor M21 has a gate electrode electrically connected to the node N21, a first electrode electrically connected to the light-emitting device 550G(i,j), and a second electrode electrically connected to the conductive film ANO.

[0288] The switch SW21 has a first terminal electrically connected to the node N21, a second terminal electrically connected to the conductive film S1g(j), and a function of controlling the conductive state or non-conductive state based on the potential of the conductive film G1(i).

[0289] The capacitor C22 includes a conductive film electrically connected to the node N21 and a conductive film electrically connected to the first electrode of the transistor M21.

[0290] The switch SW23 has a first terminal electrically connected to the conductive film V0, a ​​second terminal electrically connected to the first electrode of the transistor M21, and a function of controlling the conductive state or non-conductive state based on the potential of the conductive film G1(i). The first terminal of the switch SW23 is electrically connected to the node N22.

[0291] This allows an image signal to be stored in node N21. Alternatively, the potential of node N22 can be initialized using switch SW23. Alternatively, the intensity of light emitted by light-emitting device 550G(i,j) can be controlled using the potential of node N21. As a result, a novel functional panel with excellent convenience and reliability can be provided.

[0292] <Configuration example of light-emitting device 550G(i,j)> Light-emitting device 550G(i,j) is electrically connected to pixel circuit 530G(i,j) (see FIGS. 4A and 5).

[0293] The light-emitting device 550G(i,j) includes an electrode 551G(i,j) electrically connected to the pixel circuit 530G(i,j) and an electrode 552 electrically connected to the conductive film VCOM2 (see FIGS. 5 and 7A). The light-emitting device 550G(i,j) has a function of operating based on the potential of the node N21.

[0294] For example, an organic electroluminescent element, an inorganic electroluminescent element, a light-emitting diode, a QDLED (Quantum Dot LED), or the like can be used for the light-emitting device 550G(i,j).

[0295] Specifically, the structures described in any of the first to fifth embodiments can be used for the light-emitting device 550G(i,j).

[0296] <<Configuration Example 2 of Pixel 703(i,j)>> A plurality of pixels can be used for pixel 703(i,j). For example, a plurality of pixels that display colors with different hues can be used. Each of the plurality of pixels can be referred to as a subpixel. Alternatively, a set of a plurality of subpixels can be referred to as a pixel.

[0297] This allows the colors displayed by the plurality of pixels to be mixed additively, or allows colors of hues that cannot be displayed by individual pixels to be displayed.

[0298] Specifically, pixel 702B(i,j) that displays blue, pixel 702G(i,j) that displays green, and pixel 702R(i,j) that displays red can be used as pixel 703(i,j). Furthermore, pixel 702B(i,j), pixel 702G(i,j), and pixel 702R(i,j) can each be referred to as a subpixel (see FIG. 3B).

[0299] Furthermore, for example, pixel 702W(i,j) displaying white or the like can be added to the above set and used as pixel 703(i,j). Also, a pixel displaying cyan, a pixel displaying magenta, and a pixel displaying yellow can be used as pixel 703(i,j).

[0300] Furthermore, for example, a pixel that emits infrared light can be added to the above set and used as pixel 703(i,j). Specifically, a pixel that emits light including light having a wavelength of 650 nm or more and 1000 nm or less can be used as pixel 703(i,j).

[0301] <Configuration example 2 of function panel 700> The functional panel described in this embodiment has a driving circuit GD and a driving circuit SD (see FIG. 3A).

[0302] <<Configuration example of drive circuit GD>> The driving circuit GD has a function of supplying a first selection signal. For example, the driving circuit GD is electrically connected to the conductive film G1(i) and supplies the first selection signal.

[0303] <<Configuration example of drive circuit SD>> The drive circuit SD is electrically connected to the conductive film S1g(j) and supplies an image signal.

[0304] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0305] (Embodiment 7) In this embodiment, a structure of a functional panel according to one embodiment of the present invention will be described with reference to FIGS.

[0306] FIG. 6 is a diagram illustrating the configuration of a functional panel according to one embodiment of the present invention, and is a cross-sectional view taken along the cutting lines X1-X2, X3-X4, and X9-X10 in FIG. 3A and a set of pixels 703(i,j).

[0307] Fig. 7A is a diagram illustrating the configuration of a functional panel according to one embodiment of the present invention, and is a cross-sectional view of a pixel 702G(i,j) shown in Fig. 3B. Fig. 7B is a cross-sectional view illustrating a part of Fig. 7A.

[0308] Fig. 8A is a diagram illustrating the configuration of a functional panel according to one embodiment of the present invention, and is a cross-sectional view taken along the cutting lines X1-X2 and X3-X4 in Fig. 3A. Fig. 8B is a diagram illustrating a portion of Fig. 8A.

[0309] <Configuration example 1 of function panel 700> The functional panel described in this embodiment has a functional layer 520 (see FIG. 6).

[0310] <<Configuration Example 1 of Functional Layer 520>> The functional layer 520 includes pixel circuits 530G(i,j) and 530W(i,j) (see FIG. 6). The functional layer 520 includes, for example, a transistor M21 used in the pixel circuit 530G(i,j) (see FIGS. 5 and 7A).

[0311] The functional layer 520 includes an opening 591G(i,j). The pixel circuit 530G(i,j) is electrically connected to the light-emitting device 550G(i,j) at the opening 591G(i,j) (see FIG. 6).

[0312] This allows pixel circuit 530G(i,j) to be formed in pixel 702G(i,j), thereby providing a novel functional panel that is highly convenient, useful, and reliable.

[0313] <<Configuration Example 2 of Functional Layer 520>> The functional layer 520 includes a driving circuit GD (see FIGS. 3A and 6). The functional layer 520 includes, for example, a transistor MD used in the driving circuit GD (see FIGS. 6 and 8A).

[0314] This allows, for example, the semiconductor film used in the driver circuit GD to be formed in the process of forming the semiconductor film used in the pixel circuit 530G(i,j). Alternatively, the semiconductor film used in the driver circuit GD can be formed using a process different from the process of forming the semiconductor film used in the pixel circuit 530G(i,j). Alternatively, the manufacturing process of the functional panel can be simplified. As a result, a novel functional panel with excellent convenience, usefulness, and reliability can be provided.

[0315] <<Example of transistor configuration>> A bottom-gate transistor, a top-gate transistor, or the like can be used in the functional layer 520. Specifically, a transistor can be used as a switch.

[0316] The transistor includes a semiconductor film 508, a conductive film 504, a conductive film 512A, and a conductive film 512B (see FIG. 7B).

[0317] The semiconductor film 508 includes a region 508A electrically connected to the conductive film 512A and a region 508B electrically connected to the conductive film 512B. The semiconductor film 508 includes a region 508C between the region 508A and the region 508B.

[0318] The conductive film 504 has a region overlapping with the region 508C, and the conductive film 504 has a function of a gate electrode.

[0319] The insulating film 506 has a region sandwiched between the semiconductor film 508 and the conductive film 504. The insulating film 506 functions as a gate insulating film.

[0320] The conductive film 512A has either a function as a source electrode or a function as a drain electrode, and the conductive film 512B has the other function as a source electrode or a drain electrode.

[0321] The conductive film 524 can also be used for a transistor. The conductive film 524 has a region where the semiconductor film 508 is sandwiched between the conductive film 524 and the conductive film 504. The conductive film 524 functions as a second gate electrode.

[0322] <Configuration Example 1 of Semiconductor Film 508> For example, a semiconductor containing a Group 14 element can be used for the semiconductor film 508. Specifically, a semiconductor containing silicon can be used for the semiconductor film 508.

[0323] [Hydrogenated amorphous silicon] For example, hydrogenated amorphous silicon can be used for the semiconductor film 508. Alternatively, microcrystalline silicon or the like can be used for the semiconductor film 508. This makes it possible to provide a functional panel with less display unevenness than, for example, a functional panel using polysilicon for the semiconductor film 508. Alternatively, it is easy to increase the size of the functional panel.

[0324] [Polysilicon] For example, polysilicon can be used for the semiconductor film 508. This allows the field-effect mobility of the transistor to be higher than that of a transistor using hydrogenated amorphous silicon for the semiconductor film 508. Alternatively, for example, the driving capability can be improved compared to a transistor using hydrogenated amorphous silicon for the semiconductor film 508. Alternatively, for example, the aperture ratio of the pixel can be improved compared to a transistor using hydrogenated amorphous silicon for the semiconductor film 508.

[0325] Alternatively, the reliability of the transistor can be improved compared to a transistor using hydrogenated amorphous silicon for the semiconductor film 508, for example.

[0326] Alternatively, the temperature required to manufacture the transistor can be lower than that of a transistor using single crystal silicon, for example.

[0327] Alternatively, a semiconductor film used for a transistor in a driver circuit can be formed in the same process as a semiconductor film used for a transistor in a pixel circuit. Alternatively, the driver circuit can be formed over the same substrate as the substrate on which the pixel circuit is formed. Alternatively, the number of components constituting an electronic device can be reduced.

[0328] [Single crystal silicon] For example, single crystal silicon can be used for the semiconductor film 508. This allows for higher definition than, for example, a functional panel using hydrogenated amorphous silicon for the semiconductor film 508. Alternatively, for example, a functional panel with less display unevenness can be provided than, for example, a functional panel using polysilicon for the semiconductor film 508. Alternatively, for example, smart glasses or a head-mounted display can be provided.

[0329] <<Configuration Example 2 of Semiconductor Film 508>> For example, metal oxide can be used for the semiconductor film 508. This allows the pixel circuit to retain an image signal for a longer period of time compared to a pixel circuit that uses a transistor with amorphous silicon as the semiconductor film. Specifically, it is possible to supply a selection signal at a frequency of less than 30 Hz, preferably less than 1 Hz, and more preferably less than once per minute, while suppressing the occurrence of flicker. As a result, it is possible to reduce fatigue accumulated in the user of the information processing device. It is also possible to reduce power consumption associated with driving.

[0330] For example, a transistor including an oxide semiconductor can be used. Specifically, an oxide semiconductor containing indium, an oxide semiconductor containing indium, gallium, and zinc, or an oxide semiconductor containing indium, gallium, zinc, and tin can be used for the semiconductor film.

[0331] For example, a transistor having a smaller leakage current in an off state than a transistor using amorphous silicon for its semiconductor film can be used. Specifically, a transistor using an oxide semiconductor for its semiconductor film can be used as a switch, etc. This allows the potential of a floating node to be held for a longer time than a circuit using a transistor using amorphous silicon for its switch.

[0332] For example, a 25 nm thick film containing indium, gallium, and zinc can be used for the semiconductor film 508 .

[0333] For example, a conductive film in which a 10-nm-thick film containing tantalum and nitrogen and a 300-nm-thick film containing copper are stacked can be used as the conductive film 504. Note that the copper-containing film has a region where the film containing tantalum and nitrogen is sandwiched between the insulating film 506 and the copper-containing film.

[0334] For example, a stacked film formed by stacking a 400-nm-thick film containing silicon and nitrogen and a 200-nm-thick film containing silicon, oxygen, and nitrogen can be used as the insulating film 506. Note that the film containing silicon and nitrogen has a region sandwiching the film containing silicon, oxygen, and nitrogen between itself and the semiconductor film 508.

[0335] For example, a conductive film formed by stacking a 50-nm-thick film containing tungsten, a 400-nm-thick film containing aluminum, and a 100-nm-thick film containing titanium in this order can be used as the conductive film 512A or 512B. Note that the film containing tungsten has a region in contact with the semiconductor film 508.

[0336] Incidentally, for example, a production line for bottom-gate transistors using amorphous silicon as a semiconductor can be easily modified to a production line for bottom-gate transistors using oxide semiconductors as a semiconductor. Similarly, a production line for top-gate transistors using polysilicon as a semiconductor can be easily modified to a production line for top-gate transistors using oxide semiconductors as a semiconductor. Both modifications allow the effective use of existing production lines.

[0337] This makes it possible to suppress display flickering, reduce power consumption, display fast-moving videos smoothly, and display photographs and the like with a rich range of gradations. As a result, it is possible to provide a novel functional panel that is highly convenient, useful, and reliable.

[0338] <<Configuration Example 3 of Semiconductor Film 508>> For example, compound semiconductors can be used as the semiconductors in transistors, specifically semiconductors containing gallium arsenide.

[0339] For example, an organic semiconductor can be used as a semiconductor for a transistor. Specifically, an organic semiconductor containing polyacenes or graphene can be used for a semiconductor film.

[0340] <Capacity configuration example> The capacitor includes a first conductive film, another conductive film, and an insulating film, the insulating film having a region sandwiched between the first conductive film and the other conductive film.

[0341] For example, a conductive film used for a source electrode or a drain electrode of a transistor, a conductive film used for a gate electrode, and an insulating film used for a gate insulating film can be used as a capacitor.

[0342] <<Configuration Example 3 of Functional Layer 520>> The functional layer 520 includes an insulating film 521, an insulating film 518, an insulating film 516, an insulating film 506, an insulating film 501C, and the like (see FIGS. 7A and 7B).

[0343] The insulating film 521 has a region sandwiched between the pixel circuit 530G(i,j) and the light-emitting device 550G(i,j).

[0344] The insulating film 518 has a region sandwiched between the insulating film 521 and the insulating film 501C.

[0345] The insulating film 516 has a region sandwiched between the insulating film 518 and the insulating film 501C.

[0346] The insulating film 506 has a region sandwiched between the insulating film 516 and the insulating film 501C.

[0347] [Insulating film 521] The insulating film 521 can be formed using an insulating inorganic material, an insulating organic material, or an insulating composite material containing an inorganic material and an organic material.

[0348] Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or the like, or a stacked material selected from these can be used for the insulating film 521. For example, the insulating film 521 can be a stacked film of an insulating film 521A and an insulating film 521B.

[0349] For example, a film containing a silicon oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, or the like, or a film containing a stacked material selected from these, can be used for the insulating film 521. Note that a silicon nitride film is a dense film and has an excellent function of suppressing diffusion of impurities.

[0350] For example, polyester, polyolefin, polyamide, polyimide, polycarbonate, polysiloxane, acrylic resin, or a laminated material or composite material of a plurality of resins selected from these can be used for the insulating film 521. Incidentally, polyimide has superior properties compared to other organic materials in terms of thermal stability, insulating properties, toughness, low dielectric constant, low coefficient of thermal expansion, chemical resistance, etc. This makes polyimide particularly suitable for use as the insulating film 521, etc.

[0351] Alternatively, a photosensitive material may be used to form the insulating film 521. Specifically, the insulating film 521 can be a film formed using a photosensitive polyimide, a photosensitive acrylic resin, or the like.

[0352] This allows the insulating film 521 to flatten steps resulting from various structures that overlap with the insulating film 521, for example.

[0353] [Insulating film 518] For example, the material that can be used for the insulating film 521 can be used for the insulating film 518.

[0354] For example, a material having a function of suppressing diffusion of oxygen, hydrogen, water, an alkali metal, an alkaline earth metal, or the like can be used for the insulating film 518. Specifically, a nitride insulating film can be used for the insulating film 518. For example, silicon nitride, silicon nitride oxide, aluminum nitride, aluminum nitride oxide, or the like can be used for the insulating film 518. This can suppress diffusion of impurities into the semiconductor film of the transistor.

[0355] [Insulating film 516] For example, the insulating film 516 can be formed using the same material as the insulating film 521. For example, the insulating film 516 can be formed using a stack of insulating films 516A and 516B.

[0356] Specifically, the insulating film 516 can be formed using a film formed using a method different from that of the insulating film 518 .

[0357] [Insulating film 506] For example, the material that can be used for the insulating film 521 can be used for the insulating film 506 .

[0358] Specifically, the insulating film 506 can be a film including a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, or a neodymium oxide film.

[0359] [Insulating film 501D] The insulating film 501D has a region sandwiched between the insulating film 501C and the insulating film 516.

[0360] For example, the material that can be used for the insulating film 506 can be used for the insulating film 501D.

[0361] [Insulating film 501C] For example, the insulating film 501C can be made of a material that can be used for the insulating film 521. Specifically, the insulating film 501C can be made of a material containing silicon and oxygen. This can suppress the diffusion of impurities into the pixel circuits, the light-emitting devices 550G(i,j), and the like.

[0362] <<Configuration Example 4 of Functional Layer 520>> The functional layer 520 includes a conductive film, wiring, and terminals. Conductive materials can be used for the wiring, electrodes, terminals, conductive film, and the like.

[0363] [Wiring etc.] For example, inorganic conductive materials, organic conductive materials, metals, conductive ceramics, etc. can be used for wiring etc.

[0364] Specifically, metal elements selected from aluminum, gold, platinum, silver, copper, chromium, tantalum, titanium, molybdenum, tungsten, nickel, iron, cobalt, palladium, and manganese can be used for wiring, etc. Alternatively, alloys containing the above-mentioned metal elements can be used for wiring, etc. In particular, alloys of copper and manganese are suitable for microfabrication using wet etching.

[0365] Specifically, a two-layer structure in which a titanium film is stacked on an aluminum film, a two-layer structure in which a titanium film is stacked on a titanium nitride film, a two-layer structure in which a tungsten film is stacked on a titanium nitride film, a two-layer structure in which a tungsten film is stacked on a tantalum nitride film or a tungsten nitride film, a three-layer structure in which a titanium film, an aluminum film is stacked on the titanium film, and a titanium film is further formed on top of that, and the like can be used for wiring, etc.

[0366] Specifically, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide doped with gallium can be used for wiring or the like.

[0367] Specifically, a film containing graphene or graphite can be used for wiring or the like.

[0368] For example, a film containing graphene can be formed by forming a film containing graphene oxide and reducing the film containing graphene oxide. Examples of the reduction method include a method of applying heat or a method of using a reducing agent.

[0369] For example, a film containing metal nanowires can be used for wiring etc. Specifically, nanowires containing silver can be used.

[0370] Specifically, conductive polymers can be used for wiring and the like.

[0371] For example, the terminal 519B can be electrically connected to the flexible printed circuit board FPC1 using a conductive material (see FIG. 6). Specifically, the terminal 519B can be electrically connected to the flexible printed circuit board FPC1 using a conductive material CP.

[0372] <Configuration example 2 of function panel 700> The functional panel 700 also includes a base material 510, a base material 770, and a sealing material 705 (see FIG. 7A). The functional panel 700 also includes a structure KB.

[0373] 《Base material 510, base material 770》 The substrate 510 or the substrate 770 can be made of a material that is light-transmitting.

[0374] For example, a flexible material can be used for the substrate 510 or the substrate 770. This makes it possible to provide a flexible functional panel.

[0375] For example, a material with a thickness of 0.7 mm or less and 0.1 mm or more can be used. Specifically, a material that has been polished to a thickness of about 0.1 mm can be used. This allows for weight reduction.

[0376] Incidentally, glass substrates of 6th generation (1500 mm × 1850 mm), 7th generation (1870 mm × 2200 mm), 8th generation (2200 mm × 2400 mm), 9th generation (2400 mm × 2800 mm), 10th generation (2950 mm × 3400 mm), etc. can be used for the base material 510 or the base material 770. This allows a large display device to be manufactured.

[0377] The substrate 510 or the substrate 770 can be made of an organic material, an inorganic material, or a composite material of an organic material and an inorganic material.

[0378] For example, inorganic materials such as glass, ceramics, and metals can be used. Specifically, alkali-free glass, soda-lime glass, potash glass, crystal glass, aluminosilicate glass, tempered glass, chemically strengthened glass, quartz, sapphire, or the like can be used for the substrate 510 or the substrate 770. Alternatively, aluminosilicate glass, tempered glass, chemically strengthened glass, sapphire, or the like can be suitably used for the substrate 510 or the substrate 770 that is disposed on the side of the functional panel closer to the user. This can prevent the functional panel from being damaged or scratched during use.

[0379] Specifically, inorganic oxide films, inorganic nitride films, inorganic oxynitride films, etc. can be used. For example, silicon oxide films, silicon nitride films, silicon oxynitride films, aluminum oxide films, etc. can be used. Stainless steel, aluminum, etc. can be used for the substrate 510 or the substrate 770.

[0380] For example, a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, an SOI substrate, or the like can be used for the base material 510 or the base material 770. This allows semiconductor elements to be formed on the base material 510 or the base material 770.

[0381] For example, organic materials such as resins, resin films, or plastics can be used for the substrate 510 or the substrate 770. Specifically, materials containing polyester, polyolefin, polyamide (nylon, aramid, etc.), polyimide, polycarbonate, polyurethane, acrylic resin, epoxy resin, or a resin having a siloxane bond such as silicone can be used for the substrate 510 or the substrate 770. For example, a resin film, resin plate, or laminated material containing these materials can be used. This can reduce the weight. Or, for example, it can reduce the frequency of breakage due to dropping.

[0382] Specifically, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), cycloolefin polymer (COP), cycloolefin copolymer (COC), or the like can be used for the substrate 510 or the substrate 770.

[0383] For example, a composite material in which a metal plate, a thin glass plate, or a film of an inorganic material or the like is bonded to a resin film or the like can be used for substrate 510 or substrate 770. For example, a composite material in which fibrous or particulate metal, glass, inorganic material, or the like is dispersed in a resin can be used for substrate 510 or substrate 770. For example, a composite material in which fibrous or particulate resin, organic material, or the like is dispersed in an inorganic material can be used for substrate 510 or substrate 770.

[0384] Furthermore, a single-layer material or a material having multiple layers stacked thereon can be used for the substrate 510 or the substrate 770. For example, a material having an insulating film or the like stacked thereon can be used. Specifically, a material having one or more films selected from a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, or the like stacked thereon can be used. This can prevent, for example, the diffusion of impurities contained in the substrate. Alternatively, it can prevent the diffusion of impurities contained in glass or resin. Alternatively, it can prevent the diffusion of impurities that permeate the resin.

[0385] Alternatively, paper or wood may be used for the substrate 510 or the substrate 770 .

[0386] For example, a material having heat resistance sufficient to withstand heat treatment during the manufacturing process can be used for the base material 510 or the base material 770. Specifically, a material having heat resistance to heat applied during the manufacturing process for directly forming a transistor, a capacitor, or the like can be used for the base material 510 or the base material 770.

[0387] For example, a method can be used in which an insulating film, a transistor, a capacitor, or the like is formed on a process substrate that is resistant to heat applied during the manufacturing process, and the formed insulating film, transistor, capacitor, or the like is transferred to, for example, the base material 510 or the base material 770. In this way, for example, an insulating film, a transistor, a capacitor, or the like can be formed on a flexible substrate.

[0388] "Sealant 705" The sealing material 705 has an area sandwiched between the functional layer 520 and the substrate 770, and has the function of bonding the functional layer 520 and the substrate 770 together (see FIG. 7A).

[0389] The sealant 705 can be made of an inorganic material, an organic material, or a composite material of an inorganic material and an organic material.

[0390] For example, the sealant 705 can be made of an organic material such as a heat-melting resin or a curable resin.

[0391] For example, the sealant 705 can be made of an organic material such as a reaction-curing adhesive, a photo-curing adhesive, a heat-curing adhesive, or / and an anaerobic adhesive.

[0392] Specifically, adhesives including epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, EVA (ethylene vinyl acetate) resin, etc. can be used for the sealing material 705.

[0393] 《Structure KB》 The structural body KB has a region sandwiched between the functional layer 520 and the base material 770. The structural body KB also has a function of providing a predetermined gap between the functional layer 520 and the base material 770.

[0394] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0395] (Embodiment 8) In this embodiment, a structure of a functional panel according to one embodiment of the present invention will be described with reference to FIGS.

[0396] <Configuration example 1 of function panel 700> The functional panel 700 includes light-emitting devices 550G(i,j) (see FIG. 7).

[0397] <Configuration example 1 of light-emitting device 550G(i,j)> Light-emitting device 550G(i,j) includes electrode 551G(i,j), electrode 552, and layer 553G(j) including a light-emitting material. Layer 553G(j) including a light-emitting material includes a region sandwiched between electrode 551G(i,j) and electrode 552.

[0398] [Configuration example 1 of layer 553G(j) containing a light-emitting material] For example, a laminate material can be used for the layer 553G(j) containing the light-emitting material.

[0399] For example, a material that emits blue light, a material that emits green light, or a material that emits red light can be used for the layer 553G(j) containing the light-emitting material. Also, a material that emits infrared light or a material that emits ultraviolet light can be used for the layer 553G(j) containing the light-emitting material.

[0400] Furthermore, a laminated material in which a layer containing a fluorescent material and a layer containing a phosphorescent material are laminated can be used for the layer 553G(j) containing a light-emitting material.

[0401] Specifically, the structures described in any of the first to fifth embodiments can be used for the light-emitting device 550G(i,j).

[0402] [Configuration example 2 of layer 553G(j) containing a light-emitting material] For example, a layer of material laminated to emit white light can be used for the layer 553G(j) containing the light-emitting material.

[0403] Specifically, a plurality of materials emitting light of different hues can be used for the layer 553G(j) containing a light-emitting material. For example, a laminated material in which a layer containing a material that emits blue light and a layer containing a material that emits yellow light are stacked can be used for the layer 553G(j). Alternatively, a laminated material in which a layer containing a material that emits blue light, a layer containing a material that emits red light, and a layer containing a material that emits green light can be stacked can be used for the layer 553G(j) containing a light-emitting material.

[0404] It should be noted that the light-emitting device 550G(i,j) may be used by overlaying, for example, a colored film CF(G), which allows light of a predetermined hue to be extracted from white light, for example.

[0405] [Configuration Example 3 of the layer 553G(j) containing a light-emitting material] For example, a laminate material laminated to emit blue light or ultraviolet light can be used for the layer 553G(j) containing the luminescent material.

[0406] A color conversion layer can be used over the light-emitting device 550G(i,j), which allows light of a predetermined hue to be extracted from blue light or ultraviolet light, for example.

[0407] [Configuration Example 4 of the layer 553G(j) containing a light-emitting material] The layer 553G(j) containing a light-emitting material includes a light-emitting unit. The light-emitting unit includes a region where electrons injected from one side recombine with holes injected from the other side. The light-emitting unit includes a light-emitting material, and the light-emitting material emits energy generated by the recombination of electrons and holes as light.

[0408] For example, multiple light-emitting units and an intermediate layer can be used in the layer 553G(j) containing a light-emitting material. The intermediate layer has a region sandwiched between two light-emitting units. The intermediate layer has a charge generation region and functions to supply holes to the light-emitting unit arranged on the cathode side and electrons to the light-emitting unit arranged on the anode side. Note that a configuration having multiple light-emitting units and an intermediate layer is sometimes called a tandem-type light-emitting element.

[0409] This can increase the current efficiency related to light emission, or decrease the current density flowing through the light emitting element at the same luminance, or increase the reliability of the light emitting element.

[0410] For example, a light-emitting unit including a material that emits light of one hue can be stacked with a light-emitting unit including a material that emits light of another hue and used in the layer 553G(j) including the light-emitting material. Alternatively, a light-emitting unit including a material that emits light of one hue can be stacked with a light-emitting unit including a material that emits light of the same hue and used in the layer 553G(j) including the light-emitting material. Specifically, two light-emitting units including a material that emits blue light can be stacked.

[0411] Incidentally, for example, high molecular weight compounds (oligomers, dendrimers, polymers, etc.), medium molecular weight compounds (compounds in the intermediate range between low molecular weight and high molecular weight: molecular weight of 400 or more and 4000 or less), etc. can be used in the layer 553G(j) containing a light-emitting material.

[0412] [Configuration Example 1 of Electrode 551G(i,j) and Electrode 552] For example, a material that can be used for wiring or the like can be used for the electrode 551G(i,j) or the electrode 552. Specifically, a material that transmits visible light can be used for the electrode 551G(i,j) or the electrode 552.

[0413] For example, a conductive oxide or a conductive oxide containing indium, such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide doped with gallium can be used. Alternatively, a metal film thin enough to transmit light can be used. Alternatively, a material that transmits visible light can be used.

[0414] For example, a metal film that transmits part of light and reflects other part of light can be used for the electrode 551G(i,j) or the electrode 552. For example, a layer 553G(j) containing a light-emitting material is used to adjust the distance between the electrode 551G(i,j) and the electrode 552.

[0415] This allows a microcavity structure to be provided in the light-emitting device 550G(i,j), or allows light of a specific wavelength to be extracted more efficiently than other light, or allows light with a narrow spectral half-width to be extracted, or allows light of a vivid color to be extracted.

[0416] For example, a film that efficiently reflects light can be used for the electrode 551G(i,j) or the electrode 552. Specifically, a material containing silver, palladium, or the like or a material containing silver, copper, or the like can be used for the metal film.

[0417] Furthermore, the electrode 551G(i,j) is electrically connected to the pixel circuit 530G(i,j) through the opening 591G(i,j) (see FIG. 7A). The electrode 551G(i,j) overlaps, for example, an opening formed in the insulating film 528, and the electrode 551G(i,j) has the insulating film 528 on its periphery.

[0418] This makes it possible to prevent short-circuiting between electrode 551G(i,j) and electrode 552.

[0419] [Configuration Example 2 of Electrode 551G(i,j) and Electrode 552] The electrode 551G(i,j) has a transmittance T1, and the electrode 552 has a transmittance T2, which is higher than the transmittance T1.

[0420] This allows the light emitted from the light-emitting device 550G(i,j) to be extracted without passing through the functional layer 520. Alternatively, the light emitted from the light-emitting device 550G(i,j) can be extracted efficiently without being blocked.

[0421] <Configuration example 2 of function panel 700> The functional panel 700 includes an insulating film 528 and an insulating film 573 (see FIG. 7A).

[0422] <<Configuration Example 1 of the insulating film 528>> The insulating film 528 has a region sandwiched between the functional layer 520 and the substrate 770, and the insulating film 528 has an opening in a region overlapping with the light-emitting device 550G(i, j) (see FIG. 7A).

[0423] For example, the same material as that used for the insulating film 521 can be used for the insulating film 528. Specifically, the insulating film 528 can be a silicon oxide film, a film containing an acrylic resin, a film containing polyimide, or the like.

[0424] "Insulating Film 573" The insulating film 573 has a region that sandwiches the light-emitting device 550G(i, j) between itself and the functional layer 520 (see FIG. 7A).

[0425] For example, a single film or a stacked film of multiple films can be used for the insulating film 573. Specifically, a stacked film of an insulating film 573A that can be formed by a method that is unlikely to damage the light-emitting device 550G(i,j) and a dense insulating film 573B with few defects can be used for the insulating film 573. For example, an organic material can be used for the insulating film 573A. An inorganic material can be used for the insulating film 573B.

[0426] This can suppress the diffusion of impurities into the light-emitting device 550G(i,j), or can improve the reliability of the light-emitting device 550G(i,j).

[0427] <Configuration example 3 of function panel 700> The functional panel 700 includes a functional layer 720 (see FIG. 7A).

[0428] <<Functional Layer 720>> The functional layer 720 includes a light-shielding film BM, a colored film CF(G), and an insulating film 771. A color conversion layer can also be used.

[0429] 《Light blocking film BM》 The light-shielding film BM has an opening in the area overlapping with the pixel 702G(i,j). For example, a dark-colored material can be used for the light-shielding film BM. This can improve the contrast of the display.

[0430] 《Colored film CF(G)》 The colored film CF(G) has an area sandwiched between the substrate 770 and the light-emitting device 550G(i,j). For example, a material that selectively transmits light of a predetermined color can be used for the colored film CF(G). Specifically, a material that transmits red light, green light, or blue light can be used for the colored film CF(G).

[0431] <<Configuration example of insulating film 771>> The insulating film 771 has a region sandwiched between the substrate 770 and the light-emitting device 550G(i,j).

[0432] The insulating film 771 has an area that sandwiches the light-shielding film BM and the colored film CF(G) between it and the base material 770. This makes it possible to flatten out any irregularities resulting from the thickness of the light-shielding film BM and the thickness of the colored film CF(G).

[0433] Color conversion layer The color conversion layer has a region sandwiched between the base material 770 and the light-emitting device 550G(i,j), or a region sandwiched between the colored film CF(G) and the light-emitting device 550G(i,j).

[0434] For example, a material that emits light having a longer wavelength than the incident light can be used for the color conversion layer, such as a material that absorbs blue light or ultraviolet light and converts it to green light and emits it, a material that absorbs blue light or ultraviolet light and converts it to red light and emits it, or a material that absorbs ultraviolet light and converts it to blue light and emits it.

[0435] Specifically, quantum dots with a diameter of a few nanometers can be used in the color conversion layer, which can emit light with a narrow half-width spectrum or highly saturated light.

[0436] <Configuration example 4 of function panel 700> The functional panel 700 includes a light-shielding film KBM (see FIG. 7A).

[0437] 《Light blocking film KBM》 The light-shielding film KBM has an opening in a region overlapping with the pixel 702G(i,j) and an opening in a region overlapping with other pixels adjacent to the pixel 702G(i,j). The light-shielding film KBM also has a region sandwiched between the functional layer 520 and the substrate 770, and functions to provide a predetermined gap between the functional layer 520 and the substrate 770. For example, a dark-colored material can be used for the light-shielding film KBM. This can suppress stray light from the pixel 702G(i,j) from entering other adjacent pixels.

[0438] <Configuration example 5 of function panel 700> The functional panel 700 includes a functional film 770P (see FIG. 7A).

[0439] 《Functional membrane 770P, etc.》 The functional film 770P has an area that overlaps with the light-emitting device 550G(i,j). The functional film 770P has an area that sandwiches the substrate 770 between itself and the light-emitting device 550G(i,j).

[0440] For example, an anti-reflection film, a polarizing film, a retardation film, a light diffusing film, a light collecting film, or the like can be used for the functional film 770P.

[0441] For example, an anti-reflection film having a thickness of 1 μm or less can be used for the functional film 770P. Specifically, a laminated film having three or more dielectric layers, preferably five or more dielectric layers, and more preferably fifteen or more dielectric layers can be used for the functional film 770P. This can suppress the reflectance to 0.5% or less, preferably 0.08% or less.

[0442] For example, a circularly polarizing film can be used for the functional film 770P.

[0443] In addition, the functional film 770P can be used with anti-static films that prevent dust from adhering, water-repellent films that make it difficult for dirt to adhere, oil-repellent films that make it difficult for dirt to adhere, anti-reflection films, non-glossy films (anti-glare films), hard coat films that prevent scratches from occurring during use, and self-repairing films that repair scratches that do occur.

[0444] <Configuration example 6 of function panel 700> Functional panel 700 includes insulating film 528 and colored film CF(G) (see FIG. 9A). Functional panel 700 also includes functional layer 520, which includes transistor M21 (see FIGS. 9A and 9B).

[0445] <<Configuration Example 2 of Insulating Film 528>> The insulating film 528 has a region sandwiched between the functional layer 520 and the substrate 770, and the insulating film 528 has an opening in a region overlapping with the light-emitting device 550W(i,j) (see FIG. 9A). The insulating film 528 also has an opening between the light-emitting device 550W(i,j) and another light-emitting device adjacent to the light-emitting device 550W(i,j). This makes it possible to suppress propagation of light emitted from the light-emitting device 550W(i,j) inside the insulating film 528. Alternatively, it is possible to suppress stray light from the pixel 702W(i,j) from entering other adjacent pixels.

[0446] <<Configuration example of light-emitting device 550W(i,j)>> Light-emitting device 550W(i,j) has electrode 551W(i,j), electrode 552, and layer 553G(j) (see FIGS. 4C and 9A).

[0447] Electrode 551W(i,j) has a transmittance T1. Electrode 552 has an area overlapping with electrode 551W(i,j), and electrode 552 has a transmittance T2. Transmittance T1 is higher than transmittance T2. Electrode 552 has a higher reflectance than electrode 551W(i,j).

[0448] <Example of the configuration of layer 553G(j)> Layer 553G(j) comprises the region sandwiched between electrode 551W(i,j) and electrode 552.

[0449] 2B in that layer 553G(j) includes unit 103(13), layer 105(13), and intermediate layer 106(13) between intermediate layer 106 and unit 103(12). Also, for example, a configuration that can be used for unit 103 can be used for unit 103(13), a configuration that can be used for layer 105 can be used for layer 105(13), and a configuration that can be used for intermediate layer 106 can be used for intermediate layer 106(13).

[0450] Layer 111 has the function of emitting light EL1, layer 111(12) has the function of emitting light EL1(2), layer 111(13) has the function of emitting light EL1(3), and layer 111(14) has the function of emitting light EL1(4).

[0451] For example, a light-emitting material that emits blue light can be used for the layers 111 and 111(12). Also, for example, a light-emitting material that emits yellow light can be used for the layer 111(13). Also, for example, a light-emitting material that emits red light can be used for the layer 111(14).

[0452] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0453] (Embodiment 9) In this embodiment, a light-emitting device using the light-emitting device described in any one of Embodiments 1 to 5 will be described.

[0454] In this embodiment, a light-emitting device manufactured using the light-emitting device described in any one of Embodiments 1 to 5 will be described with reference to FIG. 10. FIG. 10A is a top view showing the light-emitting device, and FIG. 10B is a cross-sectional view taken along lines AB and CD in FIG. 10A. This light-emitting device includes a driver circuit section (source line driver circuit 601), a pixel section 602, and a driver circuit section (gate line driver circuit 603) indicated by dotted lines to control light emission from the light-emitting device. Reference numeral 604 denotes a sealing substrate, 605 denotes a sealant, and the inside surrounded by the sealant 605 forms a space 607.

[0455] The routing wiring 608 is wiring for transmitting signals input to the source line driver circuit 601 and the gate line driver circuit 603, and receives video signals, clock signals, start signals, reset signals, etc. from an FPC (flexible printed circuit) 609, which serves as an external input terminal. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to this FPC. In this specification, the light-emitting device includes not only the light-emitting device itself, but also a state in which an FPC or PWB is attached to it.

[0456] Next, the cross-sectional structure will be described with reference to Fig. 10B. A driver circuit section and a pixel section are formed on an element substrate 610, but here, a source line driver circuit 601, which is the driver circuit section, and one pixel in a pixel section 602 are shown.

[0457] The element substrate 610 may be made of a substrate made of glass, quartz, organic resin, metal, alloy, semiconductor, or a plastic substrate made of FRP (Fiber Reinforced Plastics), PVF (Polyvinyl Fluoride), polyester, acrylic resin, or the like.

[0458] The structure of the transistor used in the pixel or the driver circuit is not particularly limited. For example, it may be an inverted staggered transistor or a staggered transistor. Furthermore, it may be a top-gate transistor or a bottom-gate transistor. The semiconductor material used for the transistor is not particularly limited, and for example, silicon, germanium, silicon carbide, gallium nitride, or the like may be used. Alternatively, an oxide semiconductor containing at least one of indium, gallium, and zinc, such as an In-Ga-Zn-based metal oxide, may be used.

[0459] The crystallinity of a semiconductor material used for a transistor is not particularly limited, and any of an amorphous semiconductor and a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0460] Here, it is preferable to use an oxide semiconductor for the transistors provided in the pixel or the driver circuit, as well as for semiconductor devices such as transistors used in touch sensors, which will be described later. In particular, it is preferable to use an oxide semiconductor having a wider band gap than silicon. By using an oxide semiconductor having a wider band gap than silicon, the current in the off state of the transistor can be reduced.

[0461] The oxide semiconductor preferably contains at least indium (In) or zinc (Zn), and more preferably contains an oxide represented by In-M-Zn oxide (M is a metal such as Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf).

[0462] In particular, it is preferable to use, as the semiconductor layer, an oxide semiconductor film having a plurality of crystal parts whose c-axes are oriented perpendicular to the surface on which the semiconductor layer is formed or the top surface of the semiconductor layer and which does not have grain boundaries between adjacent crystal parts.

[0463] By using such a material for the semiconductor layer, fluctuations in electrical characteristics are suppressed, and a highly reliable transistor can be realized.

[0464] Furthermore, a transistor having the above-described semiconductor layer can retain charge stored in a capacitor through the transistor for a long period of time due to its low off-state current. By applying such a transistor to a pixel, it is possible to stop the driver circuit while maintaining the gray level of an image displayed in each display region. As a result, an electronic device with extremely low power consumption can be realized.

[0465] To stabilize the characteristics of the transistor, it is preferable to provide an underlayer film. The underlayer film can be formed as a single layer or a multilayer using an inorganic insulating film such as a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film. The underlayer film can be formed by a sputtering method, a CVD (Chemical Vapor Deposition) method (such as a plasma CVD method, a thermal CVD method, or a MOCVD (Metal Organic CVD) method), an ALD (Atomic Layer Deposition) method, a coating method, a printing method, or the like. Note that the underlayer film need not be provided if it is not necessary.

[0466] Note that FET 623 represents one of the transistors formed in the source line driver circuit 601. The driver circuit may be formed of various CMOS circuits, PMOS circuits, or NMOS circuits. In addition, although this embodiment shows a driver-integrated type in which the driver circuit is formed on a substrate, this is not necessarily required, and the driver circuit may also be formed externally rather than on the substrate.

[0467] Furthermore, the pixel portion 602 is formed by a plurality of pixels each including a switching FET 611, a current control FET 612, and a first electrode 613 electrically connected to the drain of the FET, but is not limited to this, and the pixel portion may be formed by combining three or more FETs and a capacitive element.

[0468] An insulator 614 is formed to cover an end portion of the first electrode 613. Here, the insulator 614 can be formed using a positive photosensitive acrylic resin film.

[0469] Furthermore, in order to improve the coverage of an EL layer or the like to be formed later, a curved surface having a curvature is formed at the upper or lower end of the insulator 614. For example, when a positive photosensitive acrylic resin is used as the material for the insulator 614, it is preferable that only the upper end of the insulator 614 has a curved surface having a curvature radius (0.2 μm or more and 3 μm or less). Furthermore, either a negative photosensitive resin or a positive photosensitive resin can be used as the insulator 614.

[0470] An EL layer 616 and a second electrode 617 are formed on the first electrode 613. The first electrode 613, which functions as an anode, is preferably made of a material with a large work function. Examples of the material include a single-layer film such as an ITO film, an indium tin oxide film containing silicon, an indium oxide film containing 2 wt % to 20 wt % of zinc oxide, a titanium nitride film, a chromium film, a tungsten film, a Zn film, or a Pt film. Other examples include a laminated structure of a titanium nitride film and a film mainly composed of aluminum, and a three-layer structure of a titanium nitride film, a film mainly composed of aluminum, and a titanium nitride film. The laminated structure provides low wiring resistance, good ohmic contact, and the first electrode 613 can function as an anode.

[0471] The EL layer 616 is formed by various methods such as a vapor deposition method using a vapor deposition mask, an inkjet method, or a spin coating method. The EL layer 616 includes the structure described in any one of Embodiments 1 to 5. Other materials constituting the EL layer 616 may be low-molecular compounds or high-molecular compounds (including oligomers and dendrimers).

[0472] Furthermore, the second electrode 617, which is formed on the EL layer 616 and functions as a cathode, is preferably made of a material having a small work function (such as Al, Mg, Li, or Ca, or an alloy or compound thereof (MgAg, MgIn, AlLi, etc.)). When light generated in the EL layer 616 is transmitted through the second electrode 617, the second electrode 617 is preferably made of a laminate of a thin metal thin film and a transparent conductive film (such as ITO, indium oxide containing 2 wt % to 20 wt % zinc oxide, indium tin oxide containing silicon, or zinc oxide (ZnO)).

[0473] Note that a light-emitting device 618 is formed with the first electrode 613, the EL layer 616, and the second electrode 617. The light-emitting device is the light-emitting device described in any one of Embodiments 1 to 5. Note that a pixel portion is formed with a plurality of light-emitting devices, but the light-emitting device in this embodiment may include both the light-emitting device described in any one of Embodiments 1 to 5 and light-emitting devices having other structures.

[0474] Furthermore, by bonding the sealing substrate 604 to the element substrate 610 with a sealant 605, a structure is formed in which a light-emitting device 618 is provided in a space 607 surrounded by the element substrate 610, the sealing substrate 604, and the sealant 605. The space 607 is filled with a filler, and in some cases, it is filled with an inert gas (nitrogen, argon, etc.), or with a sealant. A recess is formed in the sealing substrate, and by providing a desiccant there, deterioration due to the influence of moisture can be suppressed, which is a preferable configuration.

[0475] It is preferable to use epoxy resin or glass frit for the sealing material 605. It is also desirable that these materials are as moisture and oxygen impermeable as possible. In addition to glass or quartz substrates, plastic substrates made of FRP (Fiber Reinforced Plastics), PVF (Polyvinyl Fluoride), polyester, acrylic resin, or the like can be used for the sealing substrate 604.

[0476] Although not shown in FIG. 10, a protective film may be provided on the second electrode. The protective film may be formed of an organic resin film or an inorganic insulating film. The protective film may also be formed so as to cover the exposed portion of the sealing material 605. The protective film may also be provided so as to cover the surfaces and side surfaces of the pair of substrates, the exposed side surfaces of the sealing layer, the insulating layer, etc.

[0477] The protective film can be made of a material that is impermeable to impurities such as water, and therefore can effectively prevent impurities such as water from diffusing from the outside to the inside.

[0478] The protective film may be made of an oxide, nitride, fluoride, sulfide, ternary compound, metal, polymer, or the like. For example, a material containing aluminum oxide, hafnium oxide, hafnium silicate, lanthanum oxide, silicon oxide, strontium titanate, tantalum oxide, titanium oxide, zinc oxide, niobium oxide, zirconium oxide, tin oxide, yttrium oxide, cerium oxide, scandium oxide, erbium oxide, vanadium oxide, indium oxide, or the like; a material containing aluminum nitride, hafnium nitride, silicon nitride, tantalum nitride, titanium nitride, niobium nitride, molybdenum nitride, zirconium nitride, or gallium nitride, or the like; a nitride containing titanium and aluminum, an oxide containing titanium and aluminum, an oxide containing aluminum and zinc, a sulfide containing manganese and zinc, a sulfide containing cerium and strontium, an oxide containing erbium and aluminum, or an oxide containing yttrium and zirconium, or the like.

[0479] The protective film is preferably formed using a film formation method that provides good step coverage. One such method is atomic layer deposition (ALD). It is preferable to use a material that can be formed using the ALD method for the protective film. By using the ALD method, it is possible to form a dense protective film with reduced defects such as cracks or pinholes, or with a uniform thickness. In addition, it is possible to reduce damage to the workpiece when forming the protective film.

[0480] For example, by forming a protective film using the ALD method, it is possible to form a uniform protective film with few defects on surfaces with complex uneven shapes, including the top, side, and back surfaces of a touch panel.

[0481] In the above manner, a light-emitting device manufactured using the light-emitting device described in any one of Embodiments 1 to 5 can be obtained.

[0482] The light-emitting device in this embodiment can have favorable characteristics because it uses the light-emitting device described in any one of Embodiments 1 to 5. Specifically, the light-emitting device described in any one of Embodiments 1 to 5 has favorable emission efficiency, and therefore can have low power consumption.

[0483] 11A shows an example of a full-color light-emitting device in which a light-emitting device that emits white light is formed and a colored film (color filter) is provided, etc. Fig. 11A shows a substrate 1001, a base insulating film 1002, a gate insulating film 1003, gate electrodes 1006, 1007, and 1008, a first interlayer insulating film 1020, a second interlayer insulating film 1021, a peripheral portion 1042, a pixel portion 1040, a driver circuit portion 1041, first electrodes 1024W, 1024R, 1024G, and 1024B of the light-emitting device, a partition wall 1025, an EL layer 1028, a second electrode 1029 of the light-emitting device, a sealing substrate 1031, a sealant 1032, etc.

[0484] 11A, the colored films (red colored film 1034R, green colored film 1034G, blue colored film 1034B) are provided on a transparent base material 1033. A black matrix 1035 may also be provided. The transparent base material 1033 on which the colored films and black matrix are provided is aligned and fixed to the substrate 1001. The colored films and black matrix 1035 are covered with an overcoat layer 1036. Also, in FIG. 11A, there are light-emitting layers from which light does not pass through the colored films and exits to the outside, and light-emitting layers from which light passes through the colored films of each color and exits to the outside. Light that does not pass through the colored films is white, and light that passes through the colored films is red, green, and blue, so that an image can be expressed using four color pixels.

[0485] 11B shows an example in which colored films (red colored film 1034R, green colored film 1034G, blue colored film 1034B) are formed between the gate insulating film 1003 and the first interlayer insulating film 1020. In this way, the colored films may be provided between the substrate 1001 and the sealing substrate 1031.

[0486] Furthermore, the light-emitting device described above has a structure in which light is extracted from the substrate 1001 on which the FET is formed (bottom emission type), but it may also have a structure in which light is extracted from the sealing substrate 1031 (top emission type). A cross-sectional view of a top emission type light-emitting device is shown in FIG. 12. In this case, a light-opaque substrate can be used as the substrate 1001. The process is the same as for a bottom emission type light-emitting device until a connection electrode that connects the FET and the anode of the light-emitting device is formed. Thereafter, a third interlayer insulating film 1037 is formed to cover the electrode 1022. This insulating film may also serve as a planarizing film. The third interlayer insulating film 1037 can be formed using the same material as the second interlayer insulating film, as well as other known materials.

[0487] The first electrodes 1024W, 1024R, 1024G, and 1024B of the light-emitting device are anodes in this example, but may be cathodes. In the case of a top-emission light-emitting device as shown in FIG. 12, the first electrodes are preferably reflective electrodes. The EL layer 1028 has a structure similar to that described for the unit 103 in any one of Embodiments 1 to 5, and has an element structure that allows white light emission.

[0488] In the top-emission structure shown in FIG. 12, sealing can be performed using a sealing substrate 1031 provided with colored films (a red colored film 1034R, a green colored film 1034G, and a blue colored film 1034B). The sealing substrate 1031 may be provided with a black matrix 1035 positioned between pixels. The colored films (the red colored film 1034R, the green colored film 1034G, and the blue colored film 1034B) and the black matrix may be covered with an overcoat layer 1036. Note that a light-transmitting substrate is used as the sealing substrate 1031. In addition, although an example of full-color display using four colors, red, green, blue, and white, is shown here, this is not particularly limited, and full-color display using four colors, red, yellow, green, and blue, or three colors, red, green, and blue, may also be performed.

[0489] A microcavity structure is suitable for use in top-emission light-emitting devices. A light-emitting device with a microcavity structure can be obtained by using a reflective electrode as the first electrode and a semi-transmissive / semi-reflective electrode as the second electrode. At least an EL layer is provided between the reflective electrode and the semi-transmissive / semi-reflective electrode, and at least an emissive layer that serves as the light-emitting region is provided.

[0490] The reflectance of the reflective electrode to visible light is 40% to 100%, preferably 70% to 100%, and the resistivity is 1×10 -2 The semi-transmitting and semi-reflective electrode has a visible light reflectance of 20% to 80%, preferably 40% to 70%, and a resistivity of 1×10 -2 It is assumed that the film has a resistance of Ωcm or less.

[0491] The light emitted from the light-emitting layer included in the EL layer is reflected by the reflective electrode and the semi-transmissive and semi-reflective electrode, causing resonance.

[0492] In this light-emitting device, the optical distance between the reflective electrode and the semi-transmissive / semi-reflective electrode can be changed by changing the thickness of the transparent conductive film or the above-mentioned composite material, carrier transport material, etc. This makes it possible to intensify light of resonant wavelengths and attenuate light of non-resonant wavelengths between the reflective electrode and the semi-transmissive / semi-reflective electrode.

[0493] Note that, since the light reflected by the reflective electrode and returned (first reflected light) significantly interferes with the light (first incident light) that directly enters the semi-transmissive-semi-reflective electrode from the light-emitting layer, it is preferable to adjust the optical distance between the reflective electrode and the light-emitting layer to (2n-1)λ / 4 (where n is a natural number greater than or equal to 1, and λ is the wavelength of the emitted light to be amplified). By adjusting this optical distance, the phases of the first reflected light and the first incident light can be matched, thereby further amplifying the light emitted from the light-emitting layer.

[0494] In the above configuration, the EL layer may have a structure having multiple light-emitting layers or a structure having a single light-emitting layer. For example, it may be combined with the above-mentioned tandem light-emitting device configuration, in which multiple EL layers are provided in one light-emitting device with a charge-generating layer sandwiched therebetween, and one or more light-emitting layers are formed in each EL layer.

[0495] The microcavity structure makes it possible to increase the light emission intensity of specific wavelengths in the front direction, thereby reducing power consumption. In the case of a light-emitting device that displays images using four sub-pixels of red, yellow, green, and blue, not only is the yellow light emitted effective in improving brightness, but the microcavity structure that matches the wavelength of each color can be applied to all sub-pixels, resulting in a light-emitting device with good characteristics.

[0496] The light-emitting device in this embodiment can have favorable characteristics because it uses the light-emitting device described in any one of Embodiments 1 to 5. Specifically, the light-emitting device described in any one of Embodiments 1 to 5 has favorable emission efficiency, and therefore can have low power consumption.

[0497] Up to this point, active matrix light-emitting devices have been described. From here on, passive matrix light-emitting devices will be described. FIG. 13 shows a passive matrix light-emitting device manufactured by applying the present invention. FIG. 13A is a perspective view showing the light-emitting device, and FIG. 13B is a cross-sectional view taken along the XY line in FIG. 13A. In FIG. 13, an EL layer 955 is provided between an electrode 952 and an electrode 956 on a substrate 951. An end of the electrode 952 is covered with an insulating layer 953. A partition layer 954 is provided on the insulating layer 953. The sidewalls of the partition layer 954 are inclined such that the distance between one sidewall and the other sidewall becomes narrower as the sidewall approaches the substrate surface. That is, the cross section of the partition layer 954 in the short side direction is trapezoidal, and the bottom side (the side facing the same direction as the surface of the insulating layer 953 and in contact with the insulating layer 953) is shorter than the top side (the side facing the same direction as the surface of the insulating layer 953 and not in contact with the insulating layer 953). By providing the partition layer 954 in this manner, defects in the light-emitting device due to static electricity or the like can be prevented. Furthermore, a passive matrix light-emitting device using the light-emitting device described in any one of Embodiments 1 to 5 can be a highly reliable light-emitting device or a light-emitting device with low power consumption.

[0498] The light emitting device described above is capable of individually controlling a large number of minute light emitting devices arranged in a matrix, and is therefore suitable for use as a display device for displaying images.

[0499] This embodiment mode can be freely combined with other embodiment modes.

[0500] (Embodiment 10) In this embodiment, an example in which the light-emitting device described in any one of Embodiments 1 to 5 is used as a lighting device will be described with reference to Fig. 14. Fig. 14B is a top view of the lighting device, and Fig. 14A is a cross-sectional view taken along line ef in Fig. 14B.

[0501] In the lighting device of this embodiment, a first electrode 401 is formed over a light-transmitting substrate 400, which serves as a support. The first electrode 401 corresponds to the electrode 101 in any one of Embodiments 1 to 5. When light is extracted from the first electrode 401 side, the first electrode 401 is formed using a light-transmitting material.

[0502] A pad 412 for supplying a voltage to the second electrode 404 is formed on the substrate 400 .

[0503] An EL layer 403 is formed on the first electrode 401. The EL layer 403 corresponds to the configuration of the unit 103 in any one of Embodiments 1 to 5, or a combination of the unit 103(12) and the intermediate layer 106. For details of these configurations, see the relevant descriptions.

[0504] A second electrode 404 is formed to cover the EL layer 403. The second electrode 404 corresponds to the electrode 102 in any one of Embodiments 1 to 5. When light is extracted from the first electrode 401 side, the second electrode 404 is formed using a material with high reflectivity. The second electrode 404 is connected to a pad 412 to supply a voltage.

[0505] As described above, the lighting device described in this embodiment has a light-emitting device including the first electrode 401, the EL layer 403, and the second electrode 404. Since the light-emitting device has high emission efficiency, the lighting device in this embodiment can be a lighting device with low power consumption.

[0506] The lighting device is completed by bonding and sealing substrate 407, on which the light-emitting device having the above configuration is formed, using sealants 405 and 406. Either sealant 405 or 406 can be used. Also, a desiccant can be mixed into inner sealant 406 (not shown in FIG. 14B), which can absorb moisture and improve reliability.

[0507] Furthermore, the pad 412 and a part of the first electrode 401 can be extended outside the sealing materials 405 and 406 to serve as an external input terminal. An IC chip 420 equipped with a converter or the like may also be provided thereon.

[0508] As described above, the lighting device described in this embodiment uses the light-emitting device described in any one of Embodiments 1 to 5 as an EL element, and can be a light-emitting device with low power consumption.

[0509] (Embodiment 11) In this embodiment, an example of an electronic device including the light-emitting device described in any one of Embodiments 1 to 5 will be described. The light-emitting device described in any one of Embodiments 1 to 5 has good light-emitting efficiency and low power consumption. As a result, the electronic device described in this embodiment can be an electronic device having a light-emitting portion with low power consumption.

[0510] Examples of electronic devices to which the light-emitting devices are applied include television sets (also called televisions or television receivers), computer monitors, digital cameras, digital video cameras, digital photo frames, mobile phones (also called mobile phones or mobile phone devices), portable game machines, personal digital assistants, sound players, large game machines such as pachinko machines, etc. Specific examples of these electronic devices are shown below.

[0511] 15A illustrates an example of a television set. The television set has a display portion 7103 incorporated in a housing 7101. Here, the housing 7101 is supported by a stand 7105. Images can be displayed on the display portion 7103, and the display portion 7103 has the light-emitting devices described in any one of Embodiments 1 to 5 arranged in a matrix.

[0512] The television set can be operated using operation switches provided on the housing 7101 or a separate remote control 7110. Operation keys 7109 provided on the remote control 7110 can be used to control the channel or volume and to control the image displayed on the display portion 7103. The remote control 7110 may be provided with a display portion 7107 that displays information output from the remote control 7110.

[0513] The television device is configured to include a receiver, a modem, etc. The receiver can receive general television broadcasts, and by connecting to a wired or wireless communication network via the modem, it is also possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0514] FIG. 15B1 shows a computer including a main body 7201, a housing 7202, a display portion 7203, a keyboard 7204, an external connection port 7205, a pointing device 7206, and the like. Note that this computer is manufactured by using the light-emitting devices described in any one of Embodiments 1 to 5 arranged in a matrix for the display portion 7203. The computer in FIG. 15B1 may have a configuration as shown in FIG. 15B2. The computer in FIG. 15B2 is provided with a second display portion 7210 instead of the keyboard 7204 and the pointing device 7206. The second display portion 7210 has a touch panel, and input can be performed by operating an input display displayed on the second display portion 7210 with a finger or a dedicated pen. The second display portion 7210 can display not only the input display but also other images. The display portion 7203 may also be a touch panel. The two screens are connected by a hinge, which can prevent the screens from being scratched or broken during storage or transportation.

[0515] 15C illustrates an example of a mobile terminal. The mobile terminal includes a display portion 7402 incorporated in a housing 7401, operation buttons 7403, an external connection port 7404, a speaker 7405, a microphone 7406, and the like. Note that the mobile terminal includes the display portion 7402 in which the light-emitting devices described in any one of Embodiments 1 to 5 are arranged in a matrix.

[0516] 15C can be configured so that information can be input by touching the display portion 7402 with a finger or the like. In this case, operations such as making a call or creating an e-mail can be performed by touching the display portion 7402 with a finger or the like.

[0517] The screen of the display unit 7402 has three main modes. The first is a display mode that mainly displays images, the second is an input mode that mainly inputs information such as characters, and the third is a display+input mode that combines the display mode and the input mode.

[0518] For example, when making a call or creating an e-mail, the display portion 7402 may be set to a character input mode mainly for inputting characters, and characters displayed on the screen may be input. In this case, it is preferable to display a keyboard or number buttons on most of the screen of the display portion 7402.

[0519] Furthermore, by providing a detection device having a sensor for detecting tilt, such as a gyroscope or an acceleration sensor, inside the mobile terminal, the orientation of the mobile terminal (portrait or landscape) can be determined and the screen display of the display portion 7402 can be automatically switched.

[0520] The screen mode can be switched by touching the display portion 7402 or by operating the operation buttons 7403 on the housing 7401. The screen mode can also be switched depending on the type of image displayed on the display portion 7402. For example, if the image signal to be displayed on the display portion is moving image data, the display mode is selected, and if it is text data, the input mode is selected.

[0521] In addition, in the input mode, a signal detected by an optical sensor of the display portion 7402 may be detected, and if there is no input by touch operation on the display portion 7402 for a certain period of time, the screen mode may be controlled to switch from the input mode to the display mode.

[0522] The display portion 7402 can also function as an image sensor. For example, personal authentication can be performed by touching the display portion 7402 with a palm or a finger to capture an image of a palm print, fingerprint, or the like. Furthermore, by using a backlight that emits near-infrared light or a sensing light source that emits near-infrared light for the display portion, finger veins, palm veins, or the like can also be captured.

[0523] FIG. 16A is a schematic diagram showing an example of a cleaning robot.

[0524] The cleaning robot 5100 has a display 5101 arranged on its top surface, multiple cameras 5102 arranged on its side, a brush 5103, and an operation button 5104. Although not shown, the cleaning robot 5100 is also provided with tires, a suction port, and the like on its bottom surface. The cleaning robot 5100 also has various other sensors such as an infrared sensor, an ultrasonic sensor, an acceleration sensor, a piezoelectric sensor, an optical sensor, and a gyro sensor. The cleaning robot 5100 also has wireless communication means.

[0525] The cleaning robot 5100 can move by itself, detect dust 5120, and suck up the dust from a suction port provided on the bottom surface.

[0526] Furthermore, the cleaning robot 5100 can analyze the image captured by the camera 5102 to determine whether there are any obstacles such as walls, furniture, or steps. Furthermore, if the image analysis detects an object that may become tangled in the brush 5103, such as a wire, the rotation of the brush 5103 can be stopped.

[0527] The display 5101 can display the remaining battery level, the amount of dust that has been sucked up, etc. The path traveled by the cleaning robot 5100 may also be displayed on the display 5101. The display 5101 may also be a touch panel, and an operation button 5104 may be provided on the display 5101.

[0528] The cleaning robot 5100 can communicate with a portable electronic device 5140 such as a smartphone. Images captured by the camera 5102 can be displayed on the portable electronic device 5140. Therefore, the owner of the cleaning robot 5100 can know the state of the room even when he or she is away from home. In addition, the display on the display 5101 can be confirmed on the portable electronic device such as a smartphone.

[0529] The light-emitting device according to one embodiment of the present invention can be used for the display 5101 .

[0530] The robot 2100 shown in FIG. 16B includes a computing device 2110, an illumination sensor 2101, a microphone 2102, an upper camera 2103, a speaker 2104, a display 2105, a lower camera 2106, an obstacle sensor 2107, and a movement mechanism 2108.

[0531] The microphone 2102 has a function of detecting the user's speaking voice, environmental sounds, etc. The speaker 2104 has a function of emitting sound. The robot 2100 can communicate with the user using the microphone 2102 and the speaker 2104.

[0532] The display 2105 has a function of displaying various information. The robot 2100 can display information desired by the user on the display 2105. The display 2105 may be equipped with a touch panel. The display 2105 may also be a detachable information terminal, which can be installed in a fixed position on the robot 2100 to enable charging and data transfer.

[0533] The upper camera 2103 and the lower camera 2106 have a function of capturing images of the surroundings of the robot 2100. In addition, the obstacle sensor 2107 can detect the presence or absence of an obstacle in the moving direction when the robot 2100 moves forward using the moving mechanism 2108. The robot 2100 can recognize the surrounding environment and move safely using the upper camera 2103, the lower camera 2106, and the obstacle sensor 2107. The light-emitting device of one embodiment of the present invention can be used for the display 2105.

[0534] 16C is a diagram showing an example of a goggle-type display. The goggle-type display includes, for example, a housing 5000, a display unit 5001, a speaker 5003, an LED lamp 5004, operation keys (including a power switch or an operation switch), a connection terminal 5006, a sensor 5007 (including a function for measuring force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared light), a microphone 5008, a display unit 5002, a support unit 5012, and earphones 5013.

[0535] The light-emitting device of one embodiment of the present invention can be used for the display portion 5001 and the display portion 5002 .

[0536] 17 shows an example in which the light-emitting device described in any one of Embodiments 1 to 5 is used in a desk lamp, which is a lighting device. The desk lamp shown in FIG. 17 includes a housing 2001 and a light source 2002, and the lighting device described in Embodiment 7 may be used as the light source 2002.

[0537] FIG. 18 shows an example in which the light-emitting device described in any one of Embodiments 1 to 5 is used as an indoor lighting device 3001. The light-emitting device described in any one of Embodiments 1 to 5 has high emission efficiency and therefore can be used as a lighting device with low power consumption. Furthermore, the light-emitting device described in any one of Embodiments 1 to 5 can be made large in area and therefore can be used as a large-area lighting device. Furthermore, the light-emitting device described in any one of Embodiments 1 to 5 is thin and therefore can be used as a thin lighting device.

[0538] The light-emitting device described in any one of Embodiments 1 to 5 can also be mounted on a windshield or a dashboard of an automobile. FIG. 19 shows one mode in which the light-emitting device described in any one of Embodiments 1 to 5 is used on a windshield or a dashboard of an automobile. Display regions 5200 to 5203 are displays provided using the light-emitting device described in any one of Embodiments 1 to 5.

[0539] The display region 5200 and the display region 5201 are display devices provided on the windshield of an automobile, and are equipped with the light-emitting device described in any one of Embodiments 1 to 5. The light-emitting device described in any one of Embodiments 1 to 5 can be a so-called see-through display device, in which the opposite side can be seen through, by forming the first electrode and the second electrode using light-transmitting electrodes. A see-through display can be installed on the windshield of an automobile without obstructing the view. When a transistor or the like for driving the device is provided, a light-transmitting transistor such as an organic transistor made of an organic semiconductor material or a transistor using an oxide semiconductor is preferably used.

[0540] A display area 5202 is a display device provided on a pillar and incorporating the light-emitting device described in any one of Embodiments 1 to 5. By displaying an image from an imaging means provided on the vehicle body in the display area 5202, the view blocked by the pillar can be complemented. Similarly, a display area 5203 provided on the dashboard can complement the view blocked by the vehicle body by displaying an image from an imaging means provided on the outside of the vehicle, thereby compensating for blind spots and improving safety. By displaying an image to complement the invisible parts, safety can be confirmed more naturally and without discomfort.

[0541] The display area 5203 can also provide various information by displaying navigation information, speedometer or RPM, mileage, fuel gauge, gear status, air conditioning settings, etc. The display items or layout can be changed as needed to suit the user's preferences. This information can also be provided in the display areas 5200 to 5202. The display areas 5200 to 5203 can also be used as lighting devices.

[0542] 20A to 20C show a foldable mobile information terminal 9310. Fig. 20A shows the mobile information terminal 9310 in an unfolded state. Fig. 20B shows the mobile information terminal 9310 in a state in the process of changing from one of the unfolded state and the folded state to the other. Fig. 20C shows the mobile information terminal 9310 in a folded state. The mobile information terminal 9310 has excellent portability in a folded state, and has excellent display visibility due to a seamless, wide display area in an unfolded state.

[0543] The functional panel 9311 is supported by three housings 9315 connected by hinges 9313. Note that the functional panel 9311 may be a touch panel (input / output device) equipped with a touch sensor (input device). The functional panel 9311 can reversibly change the state of the mobile information terminal 9310 from an unfolded state to a folded state by bending the two housings 9315 via the hinges 9313. The light-emitting device of one embodiment of the present invention can be used for the functional panel 9311.

[0544] Note that the structure described in this embodiment mode can be used by combining any of the structures described in Embodiment Modes 1 to 5 as appropriate.

[0545] As described above, the light-emitting device having the light-emitting device described in any one of Embodiments 1 to 5 has a very wide range of application, and the light-emitting device can be applied to electronic devices in a variety of fields. By using the light-emitting device described in any one of Embodiments 1 to 5, electronic devices with low power consumption can be obtained.

[0546] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification. [Example]

[0547] In this example, a structure of a light-emitting device according to one embodiment of the present invention will be described with reference to FIGS.

[0548] 21A to 21C are diagrams illustrating the configuration of a light-emitting device.

[0549] FIG. 22 is a diagram illustrating the wavelength-refractive index characteristics of materials.

[0550] FIG. 23 is a graph illustrating the current density-luminance characteristics of the light-emitting device 1 and the comparative light-emitting device 1. In FIG.

[0551] FIG. 24 is a graph illustrating the luminance-current efficiency characteristics of the light-emitting device 1 and the comparative light-emitting device 1. In FIG.

[0552] FIG. 25 is a diagram illustrating the voltage-luminance characteristics of the light-emitting device 1 and the comparative light-emitting device 1. In FIG.

[0553] FIG. 26 is a diagram illustrating the voltage-current characteristics of the light-emitting device 1 and the comparative light-emitting device 1. In FIG.

[0554] FIG. 27 is a diagram illustrating the luminance-blue index characteristics of the light-emitting device 1 and the comparative light-emitting device 1. In FIG.

[0555] FIG. 28 shows the light emitting device 1 and the comparative light emitting device 1 at 1000 cd / m 2 10 is a diagram illustrating an emission spectrum when light is emitted at a luminance of 1000 .mu.m.

[0556] Figure 29 shows the 50mA / cm 2 1 is a graph showing the normalized luminance vs. time change characteristics when light-emitting device 1 and comparative light-emitting device 1 are caused to emit light at a constant current density of 100 .mu.m.

[0557] <Light-emitting device 1> The light-emitting device 1 fabricated in this example has the same configuration as the light-emitting device 150 (see FIG. 21A).

[0558] The light-emitting device 150 includes an electrode 101, an electrode 102, and a unit 103. The electrode 101 includes a light-transmitting conductive film TCF and a reflective film REF. The light-emitting device 150 also includes a layer 105.

[0559] The electrode 102 has an overlapping area with the electrode 101 .

[0560] Unit 103 comprises a region sandwiched between electrode 101 and electrode 102 , and unit 103 comprises layers 111 , 112 and 113 .

[0561] Layer 111 comprises a region sandwiched between layers 112 and 113, and layer 111 includes a light-emitting material.

[0562] Layer 113 comprises an area sandwiched between layer 111 and electrode 102 , and layer 113 contacts layer 111 .

[0563] Layer 113 comprises the material ET and an organometallic complex of an alkali metal or an organometallic complex of an alkaline earth metal.

[0564] Layer 112 comprises a region sandwiched between electrode 101 and layer 111, and layer 112 comprises material HT1.

[0565] Material HT1 has a refractive index n2, which is 1.5 to 1.75 in the wavelength range of 455 nm to 465 nm. Specifically, N,N-bis(4-cyclohexylphenyl)-N-(9,9-dimethyl-9H-fluoren-2-yl)amine (abbreviated as dchPAF) was used for material HT1. The refractive index of dchPAF is shown in Figure 22. The ordinary refractive index of dchPAF was 1.65 at a wavelength of 633 nm. A 50 nm-thick thin film was formed on a quartz substrate using vacuum deposition, and the refractive index of the thin film was measured using a spectroscopic ellipsometer (M-2000U, manufactured by J.A. Woollam Japan).

[0566] Light-emitting device 150 also includes layer 104. Layer 104 includes material HT1 and material AM having electron acceptor properties.

[0567] The material HT1 has a HOMO level HOMO1 (see Figure 21C). Specifically, CV measurement revealed that the HOMO level of dchPAF was -5.36 eV. The measurement was performed using an electrochemical analyzer (manufactured by BAS Inc., model number: ALS Model 600A or 600C).

[0568] Layer 112 also includes regions 112A and 112B (see FIG. 21A).

[0569] The region 112A includes the material HT1. The region 112B includes a portion sandwiched between the layer 111 and the region 112A, and includes the material HT2. Specifically, DBfBB1TP was used for the material HT2.

[0570] The material HT2 has a HOMO level HOMO2 (see FIG. 21C). Specifically, according to CV measurements, the HOMO level of DBfBB1TP was −5.50 eV, which was −0.14 eV relative to the HOMO level of dchPAF.

[0571] <Configuration of Light-Emitting Device 1> The configuration of light-emitting device 1 is shown in Table 1. The structural formulas of the materials used in light-emitting device 1 described in this example, light-emitting device 2 described later, comparative light-emitting device 1, and comparative light-emitting device 2 are shown below.

[0572] [Table 1]

[0573] [ka]

[0574] <Method for producing light-emitting device 1> The light-emitting device 1 described in this example was fabricated using a method having the following steps.

[0575] [First Step] In the first step, the reflective film REF was formed by sputtering using a silver alloy as a target.

[0576] The reflective film REF contains silver, palladium, and copper, and has a thickness of 100 nm.

[0577] [Second step] In the second step, a transparent conductive film TCF was formed on the reflective film REF by sputtering using an indium oxide-tin oxide (ITSO) target containing silicon or silicon oxide.

[0578] The transparent conductive film TCF includes ITSO and has a thickness of 85 nm. 2 It has an area of ​​(2mm x 2mm).

[0579] Next, the substrate on which the electrode 101 was formed was washed with water, baked at 200°C for 1 hour, and then subjected to UV ozone treatment for 370 seconds. -4 The substrate was placed in a vacuum deposition apparatus whose internal pressure had been reduced to about Pa, and vacuum baking was performed at 170° C. for 30 minutes in the heating chamber of the vacuum deposition apparatus. Thereafter, the substrate was allowed to cool for about 30 minutes.

[0580] [Third Step] In the third step, a layer 104 was formed on the electrode 101. Specifically, materials were co-evaporated using a resistance heating method.

[0581] The layer 104 contains dchPAF and an electron acceptor material (abbreviated as OCHD-001) in a weight ratio of dchPAF:OCHD-001=1:0.05, and has a thickness of 10 nm. Note that OCHD-001 has acceptor properties.

[0582] [Fourth step] In the fourth step, a layer region 112A was formed on the layer 104. Specifically, a material was evaporated using a resistance heating method.

[0583] Region 112A includes dchPAF and has a thickness of 30 nm.

[0584] [5th ​​step] In the fifth step, the region 112B was formed on the region 112A. Specifically, a material was evaporated using a resistance heating method.

[0585] The region 112B includes DBfBB1TP and has a thickness of 10 nm.

[0586] [Sixth step] In the sixth step, a layer 111 was formed on the region 112B by co-evaporation of materials using a resistance heating method.

[0587] The layer 111 contains αN-βNPAnth and 3,10PCA2Nbf(IV)-O2 in a weight ratio of αN-βNPAnth:3,10PCA2Nbf(IV)-O2=1:0.015, and has a thickness of 25 nm.

[0588] [Seventh step] In the seventh step, a layer 113 was formed on the layer 111. Specifically, materials were co-evaporated using a resistance heating method.

[0589] The layer 113 contains ZADN and Liq in a weight ratio of ZADN:Liq=1:1, and has a thickness of 30 nm.

[0590] [Eighth Step] In the eighth step, the layer 105 was formed on the layer 113. Specifically, the material was evaporated using a resistance heating method.

[0591] The layer 105 contains Liq and has a thickness of 1 nm.

[0592] [9th step] In the ninth step, the electrode 102 was formed on the layer 105. Specifically, materials were co-evaporated using a resistance heating method.

[0593] The electrode 102 contains Ag and Mg at a volume ratio of Ag:Mg=10:1, and has a thickness of 15 nm.

[0594] [Step 10] In the tenth step, a layer CAP was formed on the electrode 102. Specifically, a material was evaporated using a resistance heating method.

[0595] The layer CAP contains DBT3P-II and has a thickness of 70 nm.

[0596] <<Operation characteristics of light-emitting device 1>> When power was supplied, the light-emitting device 1 emitted light EL1 (see FIG. 21A). The operating characteristics of the light-emitting device 1 were measured using a spectroradiometer (UR-UL1R, manufactured by Topcon Corporation) (see FIGS. 23 to 28). The measurements were carried out at room temperature.

[0597] Light-emitting device 1 is set at a brightness of 1000 cd / m 2 The main initial characteristics when light was emitted at about this temperature are shown in Table 2. The initial characteristics of other light-emitting devices are also listed in Table 2, and their configurations will be described later.

[0598] The blue index is a value obtained by dividing the current efficiency (cd / A) by the chromaticity y, and is one of the indices that express the luminous characteristics of blue light emission. The smaller the chromaticity y, the higher the color purity of blue light emission tends to be. Blue light emission with high color purity can express a wide range of blue colors even with a small luminance component. By using blue light emission with high color purity, the required luminance to express blue color is reduced, thereby reducing power consumption. Therefore, the blue index, which takes into account the chromaticity y, which is one index of blue purity, is preferably used as a means of expressing the efficiency of blue light emission. It can be said that a light-emitting device with a higher blue index has better efficiency as a blue light-emitting device used in a display.

[0599] [Table 2]

[0600] Light-emitting device 1 was found to exhibit good characteristics. For example, at a driving voltage equivalent to that of comparative light-emitting device 1, light-emitting device 1 exhibited a higher current efficiency than comparative light-emitting device 1. It also exhibited a high blue index. 2 When the light-emitting device 1 was continuously driven to emit light at a constant current density of 3080 cd / m, the decrease in luminance was smaller than that of the comparative light-emitting device 1 (see FIG. 29). Specifically, the decrease in luminance was improved immediately after the device was turned on. For example, the light-emitting device 1 had a luminance of 3080 cd / m 2 It took 950 hours for the initial luminance of Comparative Light-Emitting Device 1 to decrease to 95% of its initial luminance. 2 It took 45 hours for the initial brightness to decrease to 95% of its original value. This not only achieved high efficiency but also improved reliability. As a result, a novel light-emitting device with excellent convenience, usefulness, and reliability was provided.

[0601] <<Measurement of electron mobility>> The electron mobility of the material used in layer 113 of light-emitting device 1 was measured using impedance spectroscopy (IS method). Specifically, the measurement was performed using an element in which a 200-nm-thick layer containing ZADN and Liq in a weight ratio of ZADN:Liq = 1:1 was sandwiched between a pair of Al electrodes. The element was fabricated by forming a layer containing ZADN and Liq on a first Al electrode by co-evaporation, and then forming a 100-nm-thick second Al electrode on top of that by evaporation.

[0602] As a result of the measurement, the electron mobility of the material used in the layer 113 of the light-emitting device 1 was found to be 600 (V / cm) in terms of the square root of the electric field strength (V / cm). 1 / 2 , 3.5×10 -6 cm 2 / Vs.

[0603] (Reference example 1) The configuration of comparative light-emitting device 1 is shown in Table 1. Comparative light-emitting device 1 prepared and explained in this example differs from light-emitting device 1 in that PCBBiF is used instead of dchPAF.

[0604] <<Method for fabricating comparative light-emitting device 1>> Comparative Light-Emitting Device 1 was fabricated using a method having the following steps.

[0605] The method for fabricating comparative light-emitting device 1 differs from the method for fabricating light-emitting device 1 in that PCBBiF is used instead of dchPAF in the third step of forming layer 104 and the fourth step of forming region 112A. Here, the differences will be described in detail, and the above description will be used for the parts where similar methods are used.

[0606] [Third Step] In the third step, a layer 104 was formed on the electrode 101. Specifically, materials were co-evaporated using a resistance heating method.

[0607] Layer 104 contains PCBBiF and OCHD-001 in a weight ratio of PCBBiF:OCHD-001=1:0.05 and has a thickness of 10 nm.

[0608] [Fourth step] In the fourth step, region 112A was formed on layer 104. Specifically, a material was evaporated using a resistive heating method.

[0609] Region 112A includes PCBBiF and has a thickness of 30 nm.

[0610] <Operating characteristics of comparative light-emitting device 1> The operating characteristics of the comparative light-emitting device 1 were measured. The measurements were carried out at room temperature.

[0611] The main initial characteristics of the comparative light-emitting device 1 are shown in Table 2. [Example]

[0612] In this example, a structure of a light-emitting device according to one embodiment of the present invention will be described with reference to FIGS.

[0613] FIG. 30 is a graph illustrating the current density-luminance characteristics of the light-emitting device 2 and the comparative light-emitting device 2. In FIG.

[0614] FIG. 31 is a graph illustrating the luminance-current efficiency characteristics of the light-emitting device 2 and the comparative light-emitting device 2. In FIG.

[0615] FIG. 32 is a diagram illustrating the voltage-luminance characteristics of the light-emitting device 2 and the comparative light-emitting device 2. In FIG.

[0616] FIG. 33 is a diagram illustrating the voltage-current characteristics of the light-emitting device 2 and the comparative light-emitting device 2. In FIG.

[0617] 34 is a diagram illustrating the luminance-external quantum efficiency characteristics of light-emitting device 2 and comparative light-emitting device 2. Note that the external quantum efficiency was calculated from the luminance, assuming that the light distribution characteristics of the light-emitting device are Lambertian type.

[0618] FIG. 35 shows the light emitting device 2 and the comparative light emitting device 2 at 1000 cd / m 2 10 is a diagram illustrating an emission spectrum when light is emitted at a luminance of 1000 .mu.m.

[0619] Figure 36 shows the 50mA / cm 2 10 is a graph showing the normalized luminance vs. time change characteristics when light-emitting device 2 and comparative light-emitting device 2 are caused to emit light at a constant current density of 1000 .mu.m.

[0620] <Light-emitting device 2> The light-emitting device 2 fabricated in this example has a similar configuration to the light-emitting device 150 (see FIG. 21B).

[0621] The light-emitting device 150 includes an electrode 101, an electrode 102, and a unit 103. The light-emitting device 150 also includes a layer 105.

[0622] The electrode 102 has an area that overlaps with the electrode 101. The electrode 102 also has an area that extends outward from the electrode 101.

[0623] Unit 103 comprises a region sandwiched between electrode 101 and electrode 102 , and unit 103 comprises layers 111 , 112 and 113 .

[0624] Layer 111 comprises a region sandwiched between layers 112 and 113, and layer 111 includes a light-emitting material.

[0625] Layer 113 comprises an area sandwiched between layer 111 and electrode 102 , and layer 113 contacts layer 111 .

[0626] Layer 113 includes material ET, and layer 113 includes an organometallic complex of an alkali metal or an organometallic complex of an alkaline earth metal.

[0627] Material ET has a refractive index n2, which is 1.5 to 1.75 in the wavelength range of 455 nm to 465 nm. Specifically, 2-{(3',5'-di-tert-butyl)-1,1'-biphenyl-3-yl}-4,6-bis(3,5-di-tert-butylphenyl)-1,3,5-triazine (abbreviated as mmtBumBP-dmmtBuPTzn) was used for material ET. The refractive index of mmtBumBP-dmmtBuPTzn is shown in Figure 22. The ordinary refractive index of mmtBumBP-dmmtBuPTzn at a wavelength of 633 nm was 1.57. A 50 nm-thick thin film was formed on a quartz substrate by vacuum deposition, and the refractive index of the thin film was measured using a spectroscopic ellipsometer (M-2000U, manufactured by J.A. Woollam Japan).

[0628] <Configuration of Light-Emitting Device 2> The configuration of the light-emitting device 2 is shown in Table 3.

[0629] [Table 3]

[0630] <Method for producing light-emitting device 2> The light-emitting device 2 described in this example was fabricated using a method having the following steps.

[0631] [First Step] In the first step, the electrode 101 was formed. Specifically, the electrode 101 was formed by sputtering using indium oxide-tin oxide (ITSO) containing silicon or silicon oxide as a target.

[0632] The electrode 101 includes ITSO and has a thickness of 110 nm. 2 It has an area of ​​(2mm x 2mm).

[0633] Next, the substrate on which the electrode 101 was formed was washed with water, baked at 200°C for 1 hour, and then subjected to UV ozone treatment for 370 seconds. -4 The substrate was placed in a vacuum deposition apparatus whose internal pressure had been reduced to about Pa, and vacuum baking was performed at 170° C. for 30 minutes in the heating chamber of the vacuum deposition apparatus. Thereafter, the substrate was allowed to cool for about 30 minutes.

[0634] [Second step] In the second step, a layer 104 was formed on the electrode 101. Specifically, materials were co-evaporated using a resistance heating method.

[0635] The layer 104 contains PCBBiF and OCHD-001 in a weight ratio of PCBBiF:OCHD-001=1:0.05, and has a thickness of 10 nm.

[0636] [Third Step] In the third step, region 112A was formed on layer 104. Specifically, a material was evaporated using a resistive heating method.

[0637] Note that region 112A includes PCBBiF and has a thickness of 90 nm.

[0638] [Fourth step] In the fourth step, the region 112B was formed on the region 112A. Specifically, a material was evaporated using a resistance heating method.

[0639] The region 112B includes DBfBB1TP and has a thickness of 10 nm.

[0640] [5th ​​step] In the fifth step, a layer 111 was formed on the region 112B by co-evaporation of materials using a resistance heating method.

[0641] The layer 111 contains αN-βNPAnth and 3,10PCA2Nbf(IV)-O2 in a weight ratio of αN-βNPAnth:3,10PCA2Nbf(IV)-O2=1:0.015, and has a thickness of 25 nm.

[0642] [Sixth step] In the sixth step, a region 113A was formed on the layer 111. Specifically, materials were co-evaporated using a resistance heating method.

[0643] The region 113A contains mmtBumBP-dmmtBuPTzn and Liq in a weight ratio of mmtBumBP-dmmtBuPTzn:Liq=1:1, and has a thickness of 10 nm.

[0644] [Seventh step] In the seventh step, the region 113B was formed on the region 113A. Specifically, materials were co-evaporated using a resistance heating method.

[0645] The region 113B contains 2-[3-(2,6-dimethyl-3-pyridinyl)-5-(9-phenanthrenyl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn) (abbreviation: mPn-mDMePyPTzn) and Liq in a weight ratio of mPn-mDMePyPTzn:Liq = 1:1, and has a thickness of 20 nm. Note that mPn-mDMePyPTzn has electron transport properties.

[0646] [Eighth Step] In the eighth step, the layer 105 was formed on the region 113B. Specifically, the material was evaporated using a resistive heating method.

[0647] The layer 105 contains Liq and has a thickness of 1 nm.

[0648] [9th step] In the ninth step, the electrode 102 was formed on the layer 105. Specifically, the material was evaporated using a resistance heating method.

[0649] The electrode 102 contains Al and has a thickness of 200 nm.

[0650] <<Operation characteristics of light-emitting device 2>> When power was supplied, the light-emitting device 2 emitted light EL1 (see FIG. 21B). The operating characteristics of the light-emitting device 2 were measured using a spectroradiometer (UR-UL1R, manufactured by Topcon Corporation) (see FIGS. 30 to 36). The measurements were carried out at room temperature.

[0651] Light-emitting device 2 is set at a brightness of 1000 cd / m 2 The main initial characteristics when the light was emitted at about 1000 kJ / s are shown in Table 4. The initial characteristics of comparative light-emitting device 2 are also shown in Table 4, and its configuration will be described later.

[0652] [Table 4]

[0653] It was found that the light-emitting device 2 exhibited good characteristics. For example, the light-emitting device 2 exhibited the same luminance as the comparative light-emitting device 2 at a driving voltage lower than that of the comparative light-emitting device 2 (see FIG. 32). 2When light-emitting device 2 was continuously operated at a constant current density of 1000 W, the decrease in luminance was smaller than that of comparative light-emitting device 2 (see Figure 36). Specifically, the decrease in luminance was improved immediately after lighting began. For example, it took 930 hours for the initial luminance of light-emitting device 2 to decrease to 95% of its initial value. Meanwhile, it took 220 hours for the initial luminance of comparative light-emitting device 2 to decrease to 95% of its initial value. This not only reduced the power consumption when light was emitted at the same luminance, but also improved reliability. As a result, a novel light-emitting device with excellent convenience, usefulness, and reliability was provided.

[0654] (Reference example 2) The configuration of comparative light-emitting device 2 is shown in Table 3. Comparative light-emitting device 2 fabricated and explained in this example differs from light-emitting device 2 in that it does not use Liq in region 113A, but uses only mmtBumBP-dmmtBuPTzn.

[0655] <<Method for producing comparative light-emitting device 2>> Comparative Light-Emitting Device 2 was fabricated using a method having the following steps.

[0656] The method for fabricating comparative light-emitting device 2 differs from that for light-emitting device 2 in that in the sixth step of forming region 113A, Liq is not used and only mmtBumBP-dmmtBuPTzn is used. Here, the differences will be described in detail, and the above description will be used for the parts where a similar method is used.

[0657] [Sixth step] In the sixth step, a region 113A was formed on the layer 111. Specifically, a material was evaporated using a resistance heating method.

[0658] The region 113A is formed using only mmtBumBP-dmmtBuPTzn and has a thickness of 10 nm.

[0659] <Operating characteristics of comparative light-emitting device 2> The operating characteristics of the comparative light-emitting device 2 were measured. The measurements were carried out at room temperature.

[0660] The main initial characteristics of the comparative light-emitting device 2 are shown in Table 4.

[0661] <Synthesis Example 1> In this example, a method for synthesizing the low refractive index electron transporting material described in Embodiment 1 will be described.

[0662] First, we will explain in detail the synthesis method of the organic compound 2-{(3',5'-di-tert-butyl)-1,1'-biphenyl-3-yl}-4,6-bis(3,5-di-tert-butylphenyl)-1,3,5-triazine (abbreviation: mmtBumBP-dmmtBuPTzn), shown in the following structural formula (200). The structure of mmtBumBP-dmmtBuPTzn is shown below.

[0663] [ka]

[0664] <Step 1: Synthesis of 3-bromo-3',5'-di-tert-butylbiphenyl> A three-neck flask was charged with 1.0 g (4.3 mmol) of 3,5-di-t-butylphenylboronic acid, 1.5 g (5.2 mmol) of 1-bromo-3-iodobenzene, 4.5 mL of 2 mol / L aqueous potassium carbonate, 20 mL of toluene, and 3 mL of ethanol. The mixture was degassed by stirring under reduced pressure. 52 mg (0.17 mmol) of tris(2-methylphenyl)phosphine (abbreviation: P(o-tolyl)3) and 10 mg (0.043 mmol) of palladium(II) acetate were added and reacted at 80 °C for 14 hours under a nitrogen atmosphere. After the reaction was completed, the mixture was extracted with toluene, and the resulting organic layer was dried over magnesium sulfate. The mixture was gravity filtered, and the filtrate was purified by silica gel column chromatography (eluent: hexane) to obtain 1.0 g of the desired white solid (yield: 68%). The synthetic scheme for Step 1 is shown below.

[0665] [ka]

[0666] Step 2: Synthesis of 2-(3',5'-di-tert-butylbiphenyl-3-yl)-4,4,5,5-tetramethyl-1,3,2-dioxaborolane A three-neck flask was charged with 1.0 g (2.9 mmol) of 3-bromo-3',5'-di-tert-butylbiphenyl, 0.96 g (3.8 mmol) of bis(pinacolato)diboron, 0.94 g (9.6 mmol) of potassium acetate, and 30 mL of 1,4-dioxane. The mixture was degassed by stirring under reduced pressure. To this mixture was added 0.12 g (0.30 mmol) of 2-dicyclohexylphosphino-2',6'-dimethoxybiphenyl (abbreviation: SPhos) and 0.12 g (0.15 mmol) of [1,1'-bis(diphenylphosphino)ferrocene]palladium(II) dichloride dichloromethane adduct. The mixture was then reacted under a nitrogen atmosphere at 110°C for 24 hours. After the reaction was complete, the mixture was extracted with toluene, and the resulting organic layer was dried over magnesium sulfate. The mixture was then gravity filtered. The obtained filtrate was purified by silica gel column chromatography (developing solvent: toluene) to obtain 0.89 g of the target yellow oil (yield: 78%). The synthetic scheme of Step 2 is shown in the following formula.

[0667] [ka]

[0668] <Step 3: Synthesis of mmtBumBP-dmmtBuPTzn> A three-neck flask was charged with 0.8 g (1.6 mmol) of 4,6-bis(3,5-di-tert-butylphenyl)-2-chloro-1,3,5-triazine, 0.89 g (2.3 mmol) of 2-(3',5'-di-tert-butylbiphenyl-3-yl)-4,4,5,5-tetramethyl-1,3,2-dioxaborolane, 0.68 g (3.2 mmol) of tripotassium phosphate, 3 mL of water, 8 mL of toluene, and 3 mL of 1,4-dioxane. The mixture was degassed by stirring under reduced pressure. 3.5 mg (0.016 mmol) of palladium(II) acetate and 10 mg (0.032 mmol) of tris(2-methylphenyl)phosphine were added and heated to reflux under a nitrogen atmosphere for 12 hours. After completion of the reaction, the mixture was extracted with ethyl acetate, and the resulting organic layer was dried over magnesium sulfate. The mixture was gravity filtered. The resulting filtrate was concentrated and purified by silica gel column chromatography (eluent: ethyl acetate:hexane = 1:20) to obtain a solid. This solid was purified by silica gel column chromatography (eluent: chloroform:hexane = 5:1 changed to 1:0). The resulting solid was recrystallized with hexane to obtain 0.88 g (yield: 76%) of the target white solid. The synthetic scheme for Step 3 is shown below.

[0669] [ka]

[0670] 0.87 g of the obtained white solid was purified by train sublimation at 230° C. under a pressure of 5.8 Pa and a flow of argon gas. After sublimation purification, 0.82 g of the target white solid was obtained with a recovery rate of 95%.

[0671] The white solid obtained in step 3 was analyzed by nuclear magnetic resonance spectroscopy ( 1 The results of the analysis by H-NMR are shown below. From these results, it was found that mmtBumBP-dmmtBuPTzn represented by the above structural formula (200) was obtained in this synthesis example.

[0672] H 1NMR (CDCl3,300MHz): δ=1.42-1.49(m,54H),7.50(s,1H),7.61-7.70(m,5H),7.87(d,1H),8.68-8.69(m,4H),8.78(d,1H),9.06(s,1H).

[0673] Similarly, organic compounds represented by the following structural formulas (201) to (204) were synthesized.

[0674] [ka]

[0675] Nuclear magnetic resonance spectroscopy of the above organic compounds ( 1 The results of the analysis by H-NMR are shown below.

[0676] Structural formula (201) 2-{(3',5'-di-tert-butyl)-1,1'-biphenyl-3-yl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mmtBumBPTzn) H 1 NMR (CDCl3, 300MHz): δ = 1.44 (s, 18H), 7.51-7.68 (m, 10H), 7.83 (d, 1H), 8.73-8.81 (m, 5H), 9.01 (s, 1H).

[0677] Structural formula (202) 2-(3,3'',5,5''-tetra-tert-butyl-1,1':3',1''-phenyl-5'-yl)-4,6-diphenyl-1,3,5-triazine (abbreviation: mmtBumTPTzn) H 1 NMR (CDCl3, 300MHz): δ = 1.44 (s, 36H), 7.54-7.62 (m, 12H), 7.99 (t, 1H), 8.79 (d, 4H), 8.92 (d, 2H).

[0678] Structural formula (203) 2-{(3',5'-di-tert-butyl)-1,1'-biphenyl-3-yl}-4,6-bis(3,5-di-tert-butylphenyl)-1,3-pyrimidine (abbreviation: mmtBumBP-dmmtBuPPm) H 1 NMR (CDCl3,300MHz): δ=1.39-1.45(m,54H),7.47(t,1H),7.59-7.65(m,5H),7.76(d,1H),7.95(s,1H),8.06(d,4H),8.73(d,1H),8.99(s,1H).

[0679] Structural formula (204) 2-(3,3'',5',5''-tetra-tert-butyl-1,1':3',1''-terphenyl-5-yl)-4,6-diphenyl-1,3,5-triazine (abbreviation: mmtBumTPTzn-02) H 1 NMR(CDCl3,300MHz):δ=1.41(s,18H),1.49(s,9H),1.52(s,9H),7.49(s,3 H),7.58-7.63(m,7H),7.69-7.70(m,2H),7.88(t,1H),8.77-8.83(m,6H).

[0680] All of the above substances have an ordinary refractive index of 1.50 or more and 1.75 or less in the blue light emission region (455 nm or more and 465 nm or less), or an ordinary refractive index of 1.45 or more and 1.70 or less in the 633 nm light wavelength that is commonly used to measure refractive index.

[0681] <Synthesis Example 2> In this example, a method for synthesizing the low refractive index hole transporting material described in Embodiment Mode 1 will be described.

[0682] First, we will explain in detail the synthesis method of N,N-bis(4-cyclohexylphenyl)-N-(9,9-dimethyl-9H-fluoren-2-yl)amine (abbreviation: dchPAF). The structure of dchPAF is shown below.

[0683] [ka]

[0684] <Step 1: Synthesis of N,N-bis(4-cyclohexylphenyl)-N-(9,9-dimethyl-9H-fluoren-2-yl)amine (abbreviation: dchPAF)> A three-neck flask was charged with 10.6 g (51 mmol) of 9,9-dimethyl-9H-fluoren-2-amine, 18.2 g (76 mmol) of 4-cyclohexyl-1-bromobenzene, 21.9 g (228 mmol) of sodium tert-butoxide, and 255 mL of xylene. The flask was degassed under reduced pressure and then purged with nitrogen. The mixture was heated to approximately 50°C with stirring. 370 mg (1.0 mmol) of allyl palladium chloride dimer (II) (abbreviated as (AllylPdCl)2) and 1660 mg (4.0 mmol) of di-tert-butyl(1-methyl-2,2-diphenylcyclopropyl)phosphine (abbreviated as cBRIDP®) were added, and the mixture was heated at 120°C for approximately 5 hours. The flask was then returned to approximately 60°C, and approximately 4 mL of water was added to precipitate a solid. The precipitated solid was collected by filtration. The filtrate was concentrated, and the resulting solution was purified by silica gel column chromatography. The resulting solution was concentrated to obtain a concentrated toluene solution. This toluene solution was added dropwise to ethanol to cause reprecipitation. The precipitate was filtered at approximately 10°C, and the resulting solid was dried under reduced pressure at approximately 80°C to obtain 10.1 g of the target white solid in a 40% yield. The synthesis scheme of dchPAF in Step 1 is shown below.

[0685] [ka]

[0686] The white solid obtained in step 1 was analyzed by nuclear magnetic resonance spectroscopy ( 1 The results of the analysis by H-NMR are shown below. This demonstrates that dchPAF was successfully synthesized in this synthesis example.

[0687] 1H-NMR.δ(CDCl3):7.60(d,1H,J=7.5Hz),7.53(d,1H,J=8.0Hz),7.37(d,2H,J=7 .5Hz),7.29(td,1H,J=7.5Hz,1.0Hz),7.23(td,1H,J=7.5Hz,1.0Hz),7.19(d,1H ,J=1.5Hz),7.06(m,8H),6.97(dd,1H,J=8.0Hz,1.5Hz),2.41-2.51(brm,2H),1. 79-1.95(m,8H),1.70-1.77(m,2H),1.33-1.45(brm,14H),1.19-1.30(brm,2H).

[0688] Similarly, organic compounds represented by the following structural formulas (101) to (109) were synthesized.

[0689] [ka]

[0690] [ka]

[0691] Nuclear magnetic resonance spectroscopy of the above organic compounds ( 1 The results of the analysis by H-NMR are shown below.

[0692] Structural formula (101) N-(4-cyclohexylphenyl)-N-(3'',5''-ditertiarybutyl-1,1''-biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)amine (abbreviation: mmtBuBichPAF) 1H-NMR.δ(CDCl3):7.63(d,1H,J=7.5Hz),7.57(d,1H,J=8.0Hz),7.44-7.49(m,2H) ,7.37-7.42(m,4H),7.31(td,1H,J=7.5Hz,2.0Hz),7.23-7.27(m,2H),7.15-7.19( m,2H),7.08-7.14(m,4H),7.05(dd,1H,J=8.0Hz,2.0Hz),2.43-2.53(brm,1H),1. 81-1.96(m,4H),1.75(d,1H,J=12.5Hz),1.32-1.48(m,28H),1.20-1.31(brm,1H).

[0693] Structural formula (102) N-(3,3'',5,5''-tetra-t-butyl-1,1':3',1''-terphenyl-5'-yl)-N-(4-cyclohexylphenyl)-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: mmtBumTPchPAF) 1 H-NMR (300MHz, CDCl3): δ=7.63(d,J=6.6Hz,1H),7.58(d,J=8.1Hz,1H),7.4 2-7.37(m,4H),7.36-7.09(m,14H),2.55-2.39(m,1H),1.98-1.20(m,51H).

[0694] Structural formula (103) N-[(3,3',5'-t-butyl)-1,1'-biphenyl-5-yl]-N-(4-cyclohexylphenyl)-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: mmtBumBichPAF) 1H-NMR.δ(CDCl3):7.63(d,1H,J=7.5Hz),7.56(d,1H,J=8.5Hz),7.37-40(m, 2H),7.27-7.32(m,4H),7.22-7.25(m,1H),7.16-7.19(brm,2H),7.08-7.15 (m,4H),7.02-7.06(m,2H),2.43-2.51(brm,1H),1.80-1.93(brm,4H),1.71 -1.77(brm,1H),1.36-1.46(brm,10H),1.33(s,18H),1.22-1.30(brm,10H).

[0695] Structural formula (104) N-(1,1'-biphenyl-2-yl)-N-[(3,3',5'-tri-t-butyl)-1,1'-biphenyl-5-yl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: mmtBumBioFBi) 1 H-NMR.δ(CDCl3):7.57(d,1H,J=7.5Hz),7.40-7.47(m,2H),7.32-7.39(m,4H),7.27-7.31(m,2H ),7.27-7.24(m,5H),6.94-7.09(m,6H),6.83(brs,2H),1.33(s,18H),1.32(s,6H),1.20(s,9H).

[0696] Structural formula (105) N-(4-tert-butylphenyl)-N-(3,3'',5,5''-tetra-t-butyl-1,1':3',1''-terphenyl-5'-yl)-9,9,-dimethyl-9H-fluoren-2-amine (abbreviation: mmtBumTPtBuPAF) 1 H-NMR.δ(CDCl3):7.64(d,1H,J=7.5Hz),7.59(d,1H,J=8.0Hz),7.38-7.43(m,4H),7.29-7.36(m,8H) ,7.24-7.28(m,3H),7.19(d,2H,J=8.5Hz),7.13(dd,1H,J=1.5Hz,8.0Hz),1.47(s,6H),1.32(s,45H).

[0697] Structural formula (106) N-(1,1'-biphenyl-2-yl)-N-(3,3'',5',5''-tetra-t-butyl-1,1':3',1''-terphenyl-5-yl)-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: mmtBumTPoFBi-02) 1 H-NMR.δ(CDCl3):7.56(d,1H,J=7.4Hz),7.50(dd,1H,J=1.7Hz),7.33-7.46(m,11H),7.27-7.29(m,2H),7.22(dd,1H,J=2.3Hz),7 .15(d,1H,J=6.9Hz),6.98-7.07(m,7H),6.93(s,1H),6.84(d,1H,J=6.3Hz),1.38(s,9H),1.37(s,18H),1.31(s,6H),1.20(s,9H).

[0698] Structural formula (107) N-(4-cyclohexylphenyl)-N-(3,3'',5',5''-tetra-t-butyl-1,1':3',1''-terphenyl-5-yl)-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: mmtBumTPchPAF-02) 1 H-NMR.δ(CDCl3):7.62(d,1H,J=7.5Hz),7.56(d,1H,J=8.0Hz),7.50(dd,1H,J=1.7Hz),7.4 6-7.47(m,2H),7.43(dd,1H,J=1.7Hz),7.37-7.39(m,3H),7.29-7.32(m,2H),7.23-7.25(m ,2H),7.20(dd,1H,J=1.7Hz),7.09-7.14(m,5H),7.05(dd,1H,J=2.3Hz),2.46(brm,1H),1. 83-1.88(m,4H),1.73-1.75(brm,1H),1.42(s,6H),1.38(s,9H),1.36(s,18H),1.29(s,9H).

[0699] Structural formula (108) N-(1,1'-biphenyl-2-yl)-N-(3'',5',5''-tri-t-butyl-1,1':3',1''-terphenyl-5-yl)-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: mmtBumTPoFBi-03) 1 H-NMR.δ(CDCl3):7.55(d,1H,J=7.4Hz),7.50(dd,1H,J=1.7Hz),7.42-7.43(m,3H),7.27-7.39(m,10H),7.18-7.25(m,4H),7.00-7.12 (m,4H),6.97(dd,1H,J=6.3Hz,1.7Hz),6.93(d,1H,J=1.7Hz),6.82(dd,1H,J=7.3Hz,2.3Hz),1.37(s,9H),1.36(s,18H),1.29(s,6H).

[0700] Structural formula (109) N-(4-cyclohexylphenyl)-N-(3'',5',5''-tri-t-butyl-1,1':3',1''-terphenyl-5-yl)-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: mmtBumTPchPAF-03) 1 H-NMR.δ(CDCl3):7.62(d,1H,J=7.5Hz),7.56(d,1H,J=8.6Hz),7.51(dd,1H,J=1.7 Hz),7.48(dd,1H,J=1.7Hz),7.46(dd,1H,J=1.7Hz),7.42(dd,1H,J=1.7Hz),7.37-7 .39(m,4H),7.27-7.33(m,2H),7.23-7.25(m,2H),7.05-7.13(m,7H),2.46(brm,1H) ),1.83-1.90(m,4H),1.73-1.75(brm,1H),1.41(s,6H),1.37(s,9H),1.35(s,18H).

[0701] All of the above substances have an ordinary refractive index of 1.50 or more and 1.75 or less in the blue light emission region (455 nm or more and 465 nm or less), or an ordinary refractive index of 1.45 or more and 1.70 or less in the 633 nm light wavelength that is commonly used to measure refractive index.

[0702] <Synthesis Example 3> Example 1 This example describes a method for synthesizing 2-phenyl-3-[10-(3-pyridyl)-9-anthryl]phenylquinoxaline (abbreviation: PyA1PQ) described in Embodiment 2. The structure of PyA1PQ is shown below.

[0703] [ka]

[0704] A 50 mL three-neck flask was charged with 0.74 g (2.2 mmol) of 3-(10-bromo-9-anthryl)pyridine, 0.26 g (0.85 mmol) of tri(ortho-tolyl)phosphine, 0.73 g (2.3 mmol) of 4-(3-phenylquinoxalin-2-yl)phenylboronic acid, 1.3 g (9.0 mmol) of an aqueous potassium carbonate solution, 40 mL of ethylene glycol dimethyl ether (DME), and 4.4 mL of water. The mixture was degassed by stirring under reduced pressure, and the atmosphere in the flask was replaced with nitrogen.

[0705] To the mixture in the flask, 65 mg (0.29 mmol) of palladium(II) acetate was added, and the mixture was stirred at 80°C for 11 hours under a nitrogen stream. After stirring, water was added to the mixture in the flask, and the mixture was extracted with toluene. The resulting extract solution was washed with saturated brine and dried over magnesium sulfate. This was gravity filtered, and the filtrate was concentrated to obtain an oily substance. The resulting oily substance was purified twice by silica gel column chromatography (chloroform) and (toluene:ethyl acetate=5:1), and then recrystallized from toluene / hexane to obtain 0.43 g of the desired yellow solid in a yield of 36%. The synthesis scheme is shown below.

[0706] [ka]

[0707] The resulting yellow solid (0.44 g) was purified by train sublimation under conditions of 10 Pa pressure, 5.0 mL / min argon flow rate, and 260°C for 18 hours. After sublimation, 0.35 g of the target yellow solid was obtained with a recovery rate of 79%.

[0708] The yellow solid obtained in the above reaction was analyzed by nuclear magnetic resonance spectroscopy ( 1 The results of the analysis by H-NMR are shown below. From these results, it was found that PyA1PQ represented by the above structural formula was obtained in this example.

[0709] 1 H NMR(CDCl3,300MHz):δ=7.37-7.50(m,9H),7.56-7.78(m,9H),7.82-7.86(m,3H), 8.24-8.30(m,2H),8.75(dd,J=1.8Hz,0.9Hz,1H),8.84(dd,J=4.8Hz,1.8Hz,1H). [Explanation of symbols]

[0710] ANO: Conductive film, CAP: Layer, CP: Conductive material, FPC1: Flexible printed circuit board, G1: Conductive film, MD: Transistor, M21: Transistor, N21: Node, N22: Node, S1g: Conductive film, SW21: Switch, SW23: Switch, TCF: Conductive film, VCOM2: Conductive film, V0: Conductive film, 101: Electrode, 102: Electrode, 103: Unit, 104: Layer, 105: Layer, 106: Intermediate layer, 106A: Layer, 106B: Layer, 111: Layer, 112: Layer, 112A: Region, 112B: Region, 113: Layer, 113A: Region, 113B: Region, 150: Light-emitting device, 231: region, 400: substrate, 401: first electrode, 403: EL layer, 404: second electrode, 405: sealing material, 406: sealing material, 407: sealing substrate, 412: pad, 420: IC chip, 501C: insulating film, 501D: insulating film, 504: conductive film, 506: insulating film, 508: semiconductor film, 508A: region, 508B: region, 508C: region, 510: base material, 512A: conductive film, 512B: conductive film, 516: insulating film, 516A: insulating film, 516B: insulating film, 518: insulating film, 519B: terminal, 520: functional layer, 521: insulating film, 521A : insulating film, 521B: insulating film, 524: conductive film, 528: insulating film, 530G: pixel circuit, 550G: light-emitting device, 550W: light-emitting device, 551G: electrode, 551W: electrode, 552: electrode, 553: EL layer, 553G: layer, 573: insulating film, 573A: insulating film, 573B: insulating film, 591G: opening, 601: source line driving circuit, 602: pixel section, 603: gate line driving circuit, 604: sealing substrate, 605: sealing material, 607: space, 608: routing wiring, 610: element substrate, 611: switching FET, 612: current control FET, 613: First electrode, 614: insulator, 616: EL layer, 617: second electrode, 618: light-emitting device, 623: FET, 700: functional panel, 702B: pixel, 702G: pixel, 702R: pixel, 702W: pixel, 703: pixel, 705: sealing material, 720: functional layer, 770: base material, 770P: functional film, 771: insulating film, 951: substrate, 952: electrode, 953: insulating layer, 954: partition layer, 955: EL layer, 956: electrode, 1001: substrate, 1002: base insulating film, 1003: gate insulating film, 1006: gate electrode, 1007: gate electrode, 1008: gate electrode,1020: first interlayer insulating film, 1021: second interlayer insulating film, 1022: electrode, 1024B: first electrode, 1024G: first electrode, 1024R: first electrode, 1024W: first electrode, 1025: partition wall, 1028: EL layer, 1029: second electrode, 1031: sealing substrate, 1032: sealing material, 1033: base material, 1034B: colored film, 1034G: colored film, 1034R: colored film, 1035: black matrix, 1036: overcoat layer, 1037: third interlayer insulating film, 1040: pixel section, 1041: drive circuit section, 1042: peripheral section, 2001: housing, 2002: light source, 2100: robot, 2101: illuminance sensor, 2102: microphone, 2103: upper camera, 2104: speaker, 2105: display, 2106: lower camera, 2107: obstacle sensor, 2108: movement mechanism, 2110: calculation device, 3001: lighting device, 5000: housing, 5001: display section, 5002: display section, 5003: speaker ka, 5004: LED lamp, 5006: connection terminal, 5007: sensor, 5008: microphone, 5012: support part, 5013: earphone, 5100: cleaning robot, 5101: display, 5102: camera, 5103: brush, 5104: operation button, 5120: dust, 5140: portable electronic device, 5200: display area, 5201: display area, 5202: display area, 5203: display area, 7101: housing, 7103: display part, 7105: stand, 7 107: Display unit, 7109: Operation keys, 7110: Remote control unit, 7201: Main body, 7202: Housing, 7203: Display unit, 7204: Keyboard, 7205: External connection port, 7206: Pointing device, 7210: Display unit, 7401: Housing, 7402: Display unit, 7403: Operation buttons, 7404: External connection port, 7405: Speaker, 7406: Microphone, 9310: Portable information terminal, 9311: Function panel, 9313: Hinge, 9315: Housing,

Claims

1. a first electrode; a second electrode; and A first unit; a first layer; the first unit has a region between the first electrode and the second electrode; the first unit has a second layer, a third layer, and a fourth layer; the second layer has a region between the third layer and the fourth layer; the second layer includes a light-emitting material and a material having an anthracene skeleton, the third layer has a region between the second layer and the second electrode; the third layer has a region in contact with the second layer, the third layer includes a first material and one of an alkali metal element, an alkali metal compound (excluding an alkali metal fluoride), an alkali metal complex, and an alkaline earth metal complex; the fourth layer has a region between the first electrode and the second layer; the fourth layer comprises a second material; the first layer has a region between the first electrode and the first unit; the first layer includes a third material and a material having electron acceptor properties; the refractive index of the second material and the refractive index of the third material are 1.5 or more and 1.75 or less in the wavelength range of 455 nm or more and 465 nm or less, a HOMO level of the second material and a HOMO level of the third material are not less than −5.7 eV and not more than −5.3 eV.

2. a first electrode; a second electrode; and A first unit; a first layer; the first unit has a region between the first electrode and the second electrode; the first unit has a second layer, a third layer, and a fourth layer; the second layer has a region between the third layer and the fourth layer; the second layer includes a light-emitting material and a material having an anthracene skeleton, the third layer has a region between the second layer and the second electrode; the third layer has a region in contact with the second layer, the third layer comprises a first material and an organometallic complex of an alkali metal or an organometallic complex of an alkaline earth metal; the fourth layer has a region between the first electrode and the second layer; the fourth layer comprises a second material; the first layer has a region between the first electrode and the first unit; the first layer includes a third material and a material having electron acceptor properties; the refractive index of the second material and the refractive index of the third material are 1.5 or more and 1.75 or less in the wavelength range of 455 nm or more and 465 nm or less, a HOMO level of the second material and a HOMO level of the third material are not less than −5.7 eV and not more than −5.3 eV.

3. In claim 1 or claim 2, the fourth layer has a first region and a second region; the second region has a portion between the second layer and the first region, the first region comprises the second material; the second region comprises a fourth material; A light-emitting device, wherein the HOMO level of the fourth material is in the range of −0.2 eV to 0 eV with respect to the HOMO level of the second material.

4. In any one of claims 1 to 3, A light-emitting device, wherein the refractive index of the first material is 1.5 or more and 1.75 or less in the wavelength range of 455 nm or more and 465 nm or less.

5. a first electrode; a second electrode; and a first unit; the first unit has a region between the first electrode and the second electrode; the first unit has a first layer, a second layer, and a third layer; the first layer has a region between the second layer and the third layer; the first layer includes a light-emitting material and a material having an anthracene skeleton, the third layer has a region between the first layer and the second electrode; the third layer is in contact with the first layer; the third layer includes a first material and any one of an alkali metal element, an alkali metal compound (excluding an alkali metal fluoride), an alkali metal complex, and an alkaline earth metal complex; A light-emitting device, wherein the refractive index of the first material is 1.5 or more and 1.75 or less in the wavelength range of 455 nm or more and 465 nm or less.

6. a first electrode; a second electrode; and a first unit; the first unit has a region between the first electrode and the second electrode; the first unit has a first layer, a second layer, and a third layer; the first layer has a region between the second layer and the third layer; the first layer includes a light-emitting material and a material having an anthracene skeleton, the third layer has a region between the first layer and the second electrode; the third layer is in contact with the first layer; the third layer comprises a first material and an organometallic complex of an alkali metal or an organometallic complex of an alkaline earth metal; A light-emitting device, wherein the refractive index of the first material is 1.5 or more and 1.75 or less in the wavelength range of 455 nm or more and 465 nm or less.

7. In any one of claims 1 to 6, The first material has an electron mobility of 1×10 when the square root of the electric field strength [V / cm] is 600. －７ cm ２ / Vs or more 5×10 －５ cm ２ / Vs or less.

8. In any one of claims 1 to 7, A second unit and an intermediate layer, the second unit has a region between the intermediate layer and the second electrode, the intermediate layer has a region between the first unit and the second unit, The intermediate layer has a function of supplying holes to one of the first unit and the second unit, and supplying electrons to the other of the first unit and the second unit.

9. A functional panel having a pixel including a light-emitting device according to claim 1 and a pixel circuit.

10. In claim 9, The transmittance of the second electrode is higher than the transmittance of the first electrode.

11. In claim 9, The transmittance of the second electrode is lower than the transmittance of the first electrode.

12. A light emitting apparatus comprising the light emitting device according to any one of claims 1 to 8, and at least one of a transistor and a substrate.

13. A display device comprising the light-emitting device according to claim 1 and at least one of a transistor and a substrate.

14. A lighting device comprising the light-emitting device according to claim 12 and a housing.

15. An electronic device comprising the display device according to claim 13, and a sensor, an operation button, a speaker, or a microphone.

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