Charged particle beam device and method for removing substrate

Abstract

To provide a charged particle beam device and a method for removing a substrate, which can reduce residual adhesive force due to charging.SOLUTION: In a charged particle beam device, an electrostatic chuck 101 includes an attracting power supply (105, 106) and electrodes (103, 104), a voltage dividing capacitor 107 provided between the electrode and a voltage reference ground 112, and a controller 100 including a peak-value detecting and integrating unit 108 that integrates peak values of an intermediate voltage waveform of the voltage dividing capacitor 107, and a peak-value integrated quantity-to-charged voltage converting unit 109 that converts the peak-value integrated value obtained by the peak-value detecting and integrating unit into a charged voltage value on the surface of the electrostatic chuck, and the controller 100 includes a cancellation voltage control unit 110 that controls a voltage for canceling out a residual attracting force on the basis of the charged voltage value, or a static eliminator control unit that controls a static eliminator that eliminates static electricity using ultraviolet light.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a charged particle beam device and a method for removing a substrate. [Background technology]

[0002] An apparatus including an electrostatic chuck is described, for example, in Patent Document 1. In Patent Document 1, the electrostatic chuck is described as an electrostatic chuck plate. Patent Document 1 describes that the value of the current that flows when a wafer is removed from the electrostatic chuck plate is detected, the residual charge on the electrostatic chuck is calculated, and the amount of residual charge affects the transport state of the wafer, so by determining the amount of residual charge, the transport state of the wafer can be known. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-165917 Summary of the Invention [Problem to be solved by the invention]

[0004] In electrostatic chucks, which attract and release wafers, the surface of the electrostatic chuck itself can become charged. If there is a charge, an attraction force (residual attraction force) is generated on the wafer even when the chuck is turned off and in the released state, and when the wafer is lifted from the electrostatic chuck, a force is applied, causing the wafer to bounce or be damaged. For this reason, it is desirable to measure the amount of charge on the chuck surface before putting the electrostatic chuck in the released state and lifting the wafer, and then reduce the residual attraction force according to the amount of charge.

[0005] However, in Patent Document 1, the charge amount is measured when the wafer is lifted, and therefore there is a risk that this method is not suitable for measuring the charge amount before the wafer is lifted in order to reduce the residual chucking force.

[0006] Therefore, the present invention provides a charged particle beam device and a method for removing a substrate that can measure the amount of charge before the influence of the residual adsorptive force occurs and reduce the residual adsorptive force due to the charge. [Means for solving the problem]

[0007] In order to achieve the above object, a charged particle beam device according to the present invention includes a scanning deflector that scans a surface of a substrate with a charged particle beam emitted from a charged particle source; a signal electron deflector that deflects the trajectory of signal electrons emitted from a substrate attracted to an electrostatic chuck; and a detector that detects signal electrons obtained based on the scanning of the charged particle beam. The electrostatic chuck has an attracting power supply and an electrode, a voltage dividing capacitor is provided between the electrode and a voltage reference ground, and the controller includes: a peak-value detection and integrating unit that integrates peak values ​​of an intermediate voltage waveform of the voltage dividing capacitor; and a peak-value integrated quantity-charge voltage converter that converts the peak-value integrated value detected by the peak-value detection and integrating unit into a charge voltage value on the surface of the electrostatic chuck, and the controller includes a cancellation voltage control unit that controls a voltage to cancel out a residual attracting force based on the charge voltage value, or a charge neutralization device control unit that controls a charge neutralization device that neutralizes static electricity with ultraviolet light.

[0008] Further, a method for dechucking a substrate according to the present invention includes a scanning deflector that scans a surface of the substrate with a charged particle beam emitted from a charged particle source; a signal electron deflector that deflects the trajectory of signal electrons emitted from the substrate attracted to an electrostatic chuck; and a detector that detects signal electrons obtained based on the scanning of the charged particle beam. The electrostatic chuck has an attracting power supply and an electrode. The method is characterized in that a peak value detection and integrating unit integrates peak values ​​of a voltage-dividing capacitor intermediate voltage waveform between the electrode and a voltage reference ground, a peak value integration amount-charged voltage converter converts the integrated peak value obtained by the peak value detection and integrating unit into a charged voltage value on the surface of the electrostatic chuck, and a cancellation voltage controller controls a voltage for canceling out a residual attracting force based on the charged voltage value, or a static eliminator controller controls a static eliminator that eliminates static electricity with ultraviolet light. [Effects of the Invention]

[0009] According to the present invention, it is possible to provide a charged particle beam device and a method for removing a substrate that can measure the amount of charge before the influence of the residual adsorptive force occurs and reduce the residual adsorptive force due to the charge.

[0010] Problems, configurations, and effects other than those described above will become apparent from the following description of the embodiments. [Brief explanation of the drawings]

[0011] [Figure 1] 1 is a diagram showing a schematic configuration of a scanning electron microscope (SEM) according to an embodiment of the present invention. [Figure 2] 1 is a block diagram showing a peripheral configuration of an electrostatic chuck according to a first embodiment of the present invention. FIG. [Figure 3] FIG. 10 is a diagram showing the relationship between the integrated value of the voltage dividing capacitor peak value and the charging voltage on the surface of the chuck according to the first embodiment. [Figure 4] FIG. 10 is a flowchart illustrating the charge detection and residual attracting force canceling operation according to the first embodiment. [Figure 5] FIG. 10 is a block diagram showing the peripheral configuration of an electrostatic chuck according to a second embodiment of the present invention. [Figure 6] FIG. 10 is a block diagram showing the peripheral configuration of an electrostatic chuck according to a third embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0012] In this specification, examples of charged particle beam devices include scanning electron microscopes (SEMs) and focused ion beam (FIB) devices, but in this specification, SEMs will be used as an example. Furthermore, "substrate" includes not only "wafers" but also "glass substrates" and the like. In this specification, at least secondary electrons (SE) and backscattered electrons (BSE) generated from the sample are referred to as signal electrons generated from the sample.

[0013] FIG. 1 is a diagram showing a schematic configuration of a scanning electron microscope (SEM) according to an embodiment of the present invention. As shown in FIG. 1, the scanning electron microscope 1 includes, as its main components, an electron source 10, a condenser lens 12, a primary electron deflector (scanning deflector) 13, an objective lens 14, a signal electron deflector 15, a condenser lens (opening angle adjustment lens) 16, a detector 17, a signal electron aperture 18, a signal electron deflector 19, a detector 21, a calculation unit 22, and a storage unit 23. Although not shown, the scanning electron microscope 100 also includes a display unit for accepting user input and displaying various parameters and observation patterns. The calculation unit 22 is realized by, for example, a processor such as a CPU (not shown), a ROM for storing various programs, a RAM for temporarily storing data during the calculation process, and a storage device such as an external storage device. The processor such as the CPU reads and executes the various programs stored in the ROM, and stores the execution results in RAM, an external storage device, or cloud storage via a network connection.

[0014] As shown in FIG. 1, in a scanning electron microscope 1, an electron beam (primary electron beam) 11 generated by an electron source 10 is converged by a condenser lens 12, and then focused onto a substrate 102 by an objective lens 14 for irradiation. At this time, the aperture angle of the electron beam (primary electron beam) 11 can be adjusted by a condenser lens (aperture angle adjustment lens) 12. A primary electron deflector (scanning deflector) 13 causes the electron beam (primary electron beam) 11 to scan an electron beam scanning area of ​​a substrate 102 attracted to an electrostatic chuck 101. By two-dimensionally scanning and irradiating the electron beam (primary electron beam) 11, signal electrons are excited within the substrate 102 and emitted from the substrate 102. These signal electrons are detected by detectors 17 and 21, and a calculation unit 22 converts the detection signal into an image, thereby obtaining an observation image of the substrate 102. Signal electrons emitted from substrate 102 are separated by signal electron deflector 15 into electrons that pass through signal electron aperture 18 and electrons that collide with signal electron aperture 18. Electrons that collide with signal electron aperture 18 generate tertiary electrons, which are detected by detector 17. Electrons that pass through signal electron aperture 18 are deflected by signal electron deflector 15 toward detector 21 and detected by detector 21. As shown in FIG. 1 , some scanning electron microscopes are provided with an energy filter 20 that can discriminate signal electrons according to energy, prior to detector 21, and detector 21 detects electrons that have passed through energy filter 20. A calculation unit 22 controls the optical elements included in scanning electron microscope 1, controls the voltage applied to energy filter 20, controls the amount of deflection of signal electron deflector 19, calculates detector 21 and a composite ratio of the signals detected by detector 21, and so on. Furthermore, the calculation unit 22 creates an observation image of the substrate 102 using the detector 21 and the detection signal of the signal electrons detected by the detector 21. The scanning electron microscope 1 also includes a controller 100 that controls the charged state of the electrostatic chuck 101.

[0015] Hereinafter, an embodiment of the present invention, particularly a controller 100 for controlling the charged state of an electrostatic chuck 101, will be described with reference to the drawings. [Example]

[0016] 2 is a block diagram showing the peripheral configuration of an electrostatic chuck according to a first embodiment of the present invention. As shown in FIG. 2, the electrostatic chuck 101 includes an electrostatic chuck 101 for attracting a substrate 102, a positive electrode 103 and a negative electrode 104 for generating a Coulomb force for attracting the substrate 102, a positive power supply 105 for applying a high voltage to the electrodes, a negative power supply 106, a voltage dividing capacitor 107 for dividing and detecting charge generated on the surface of the electrostatic chuck 101 on the negative electrode 104 side using two series capacitors, a peak-value detection and integration unit 108 for detecting and integrating peak values ​​of the waveform divided by the voltage dividing capacitor 107, a peak-value integration value-to-charge voltage conversion unit 109 for converting the integrated peak-value value into a charge voltage value on the surface of the electrostatic chuck 101, a cancellation voltage control unit 110 for controlling a voltage for canceling a residual attracting force based on the charge voltage value, a cancellation voltage power supply 111 for generating a voltage for canceling the residual attracting force, and a voltage reference ground 112. The peak value detection and integration unit 108, the peak value integration value-charge voltage conversion unit 109, and the offset voltage control unit 110 constitute the controller 100, and are realized by, for example, a processor such as a CPU (not shown), a ROM for storing various programs, a RAM for temporarily storing data in the calculation process, and a storage device such as an external storage device, and the processor such as a CPU reads and executes the various programs stored in the ROM, and stores the calculation results that are the execution results in the RAM, the external storage device, or cloud storage via a network connection, etc.

[0017] Here, the principle of detecting the charge on the surface of the electrostatic chuck 101 using the voltage-dividing capacitor 107 will be described. Because the electrostatic chuck 101 itself is an insulator and the negative electrode 104 is a conductor, the circuit element between the surface of the electrostatic chuck 101 and the negative electrode 104 can be considered as a capacitor model. This capacitor model and the voltage-dividing capacitor 107 form three capacitors in series. Since the series-connected capacitors operate to divide and output AC components, the voltage-dividing capacitor 107 divides and outputs the AC fluctuation component of the voltage when charging occurs on the surface of the electrostatic chuck 101. The peak value of the AC voltage at the midpoint of the voltage-dividing capacitor 107 is proportional to the voltage generated by the charging. Therefore, by measuring the output of the voltage-dividing capacitor 107, the charge voltage on the surface of the electrostatic chuck 101 can be calculated. Furthermore, by integrating the AC output peak value of the voltage dividing capacitor 107, the amount of voltage change due to new charging is integrated each time charging occurs, and therefore the value becomes proportional to the total charging voltage on the surface of the electrostatic chuck 101, and the total charging voltage can be determined by back calculation.

[0018] FIG. 3 shows a table showing the correspondence between the integrated peak value of the voltage dividing capacitor and the charge voltage on the surface of the electrostatic chuck 101. The relationship between the charge voltage when charging occurs on the surface of the electrostatic chuck 101 and the peak value of the output of the voltage dividing capacitor 107 is measured in advance and stored as table data in the storage unit 23 shown in FIG. 1 or in a storage unit not shown in FIG. 2. As shown in FIG. 3, when the integrated peak value of the voltage dividing capacitor 201 is 10 mV, the charge voltage 202 is 5 V. When the integrated peak value of the voltage dividing capacitor 201 is 20 mV, the charge voltage 202 is 10 V. When the integrated peak value of the voltage dividing capacitor 201 is 100 mV, the charge voltage 202 is 50 V. Here, for example, when the integrated peak value of the voltage dividing capacitor 201 is 15 mV, the integrated peak value-to-charge voltage conversion unit 109 calculates the charge voltage 202 to be 7.5 V by linear interpolation. It should be noted that other interpolation methods may be used in addition to linear interpolation.

[0019] FIG. 4 is a flowchart showing the charge detection and residual attracting force cancellation operations according to this embodiment. As shown in FIG. 4, the detection operation starts in step S101. In step S102, the peak value detection and integrating unit 108 of the controller 100 measures and integrates the peak value when the charge occurs. In step S103, before the substrate 102 is released from and lifted from the electrostatic chuck 101, the peak value integration value-to-charge voltage conversion unit 109 of the controller 100 calculates the charge voltage on the surface of the electrostatic chuck 101 from the table shown in FIG. 2 based on the integrated detected voltage. Then, in step S104, before the substrate 102 is lifted after release from the electrostatic chuck 101, the offset voltage control unit 110 of the controller 100 calculates a voltage having a sign opposite to that of the charge voltage calculated in step S103 and generates it from the offset voltage power supply 111. This allows the substrate 102 to be lifted in a state where the residual attracting force is canceled out, and the process ends (step S105).

[0020] With the above-described configuration and processing, even if an electrostatic charge is generated on the surface of the electrostatic chuck 101, the electrostatic charge voltage can be detected before the substrate 102 is lifted, and an offset voltage corresponding to the detected voltage can be applied, thereby reducing the residual attracting force due to the electrostatic charge.

[0021] In this embodiment, the voltage dividing capacitor 107, the peak value detection and integrating unit 108, the peak value integrated value-to-charged voltage converter 109, and the offset voltage control unit 110, which are all components of the controller 100, are provided on the negative electrode 104 side of the electrostatic chuck 101, but this is not limiting. For example, the peak value detection and integrating unit 108, the peak value integrated value-to-charged voltage converter 109, and the offset voltage control unit 110, which are all components of the controller 100, may be provided on the positive electrode 103 side. Furthermore, although the offset voltage power supply 111 is illustrated as the negative power supply 106, it may be the positive power supply 105 or a power supply with both positive and negative outputs, depending on the charge polarity on the surface of the electrostatic chuck 101. Furthermore, the absolute value of the voltage generated by the offset voltage power supply 111 in step S104 does not necessarily have to be exactly the same as the charged voltage, and may be a value obtained by multiplying the charged voltage by a certain proportional coefficient.

[0022] As described above, according to this embodiment, it is possible to provide a charged particle beam device and a method for removing a substrate that can measure the amount of charge before the influence of the residual adsorptive force occurs and reduce the residual adsorptive force due to the charge. [Example]

[0023] 5 is a block diagram showing the peripheral configuration of an electrostatic chuck according to a second embodiment of the present invention. This embodiment differs from the first embodiment in that a second controller 100b including a voltage dividing capacitor 403, a peak value detection and integrating unit 404, a peak value integrated quantity-to-charged voltage converting unit 405, and a cancellation voltage control unit 406 is provided on the positive electrode 103 side in addition to the negative electrode 104 side, and further includes a positive electrode cancellation voltage power supply 401 that applies a cancellation voltage only to the positive electrode 103, and a negative electrode cancellation voltage power supply 401 that applies a cancellation voltage only to the negative electrode 103. Hereinafter, the same components as those in the first embodiment are designated by the same reference numerals, and redundant description will be omitted.

[0024] As shown in FIG. 5 , a scanning electron microscope (SEM) 1 according to this embodiment includes an electrostatic chuck 101 that attracts a substrate 102, the substrate 102, a positive electrode 103 and a negative electrode 104 that generate a Coulomb force for attracting the substrate, a positive power supply 105 and a negative power supply 106 that apply a high voltage to the electrodes, a voltage dividing capacitor 107 that divides and detects the charge generated on the surface of the electrostatic chuck 101 on the negative electrode 104 side using two series capacitors, a peak-value detection and integration unit 108 that detects the peak values ​​of the waveform divided by the voltage dividing capacitor 107 and integrates the peak values, a peak-value integration value-to-charge voltage conversion unit 109 that converts the integrated peak-value value into a charge voltage value on the surface of the electrostatic chuck 101 based on the integrated peak-value value, a cancellation voltage control unit 110 that controls a voltage for canceling out a residual attracting force based on the charge voltage value, a cancellation voltage power supply 402 that generates a voltage for canceling out the residual attracting force, and a voltage reference ground 112. The peak value detection and integration unit 108, the peak value integration value-charge voltage conversion unit 109, and the cancellation voltage control unit 110 constitute the first controller 100a, and are realized by, for example, a processor such as a CPU (not shown), a ROM for storing various programs, a RAM for temporarily storing data in the calculation process, and a storage device such as an external storage device, and the processor such as a CPU reads and executes the various programs stored in the ROM, and stores the calculation results that are the execution results in the RAM, the external storage device, or cloud storage via a network connection, etc.

[0025] The electrostatic chuck 101 further includes an electrostatic chuck 101 for attracting the substrate 102, the substrate 102, a positive electrode 103 and a negative electrode 104 for generating a Coulomb force for attracting the substrate 102, a positive power supply 105 and a negative power supply 106 for applying a high voltage to the electrodes, a voltage dividing capacitor 403 for dividing and detecting the charge generated on the surface of the electrostatic chuck 101 on the positive electrode 103 side using two series capacitors, a peak-value detection and integration unit 404 for detecting and integrating peak values ​​of the waveform divided by the voltage dividing capacitor 403, a peak-value integration value-to-charge voltage conversion unit 405 for converting the integrated peak-value value into a charge voltage value on the surface of the electrostatic chuck 101, a cancellation voltage control unit 406 for controlling a voltage for canceling out a residual attracting force based on the charge voltage value, a cancellation voltage power supply 401 for generating a voltage for canceling out the residual attracting force, and a voltage reference ground 112. The peak value detection and integration unit 404, the peak value integration value-charged voltage conversion unit 405, and the offset voltage control unit 406 constitute the second controller 100b, and are realized by, for example, a processor such as a CPU (not shown), a ROM for storing various programs, a RAM for temporarily storing data in the calculation process, and a storage device such as an external storage device, and the processor such as a CPU reads and executes the various programs stored in the ROM, and stores the calculation results that are the execution results in the RAM, the external storage device, or cloud storage via a network connection, etc.

[0026] With this configuration, even if the charged portions on the chuck surface are biased and only the positive electrode 103 side or the negative electrode 104 side is charged, the adsorptive force can be effectively offset in accordance with the amount of charge only for the portion where the residual adsorptive force occurs.

[0027] As described above, according to this embodiment, in addition to the effects of the first embodiment, each electrode (positive electrode 103, negative electrode 104) can be controlled independently, so that the adsorptive force can be offset more effectively according to the charge amount than in the first embodiment. [Example]

[0028] 6 is a block diagram showing the peripheral configuration of an electrostatic chuck according to a third embodiment of the present invention. This embodiment differs from the first embodiment in that it includes a static eliminator 501 (for example, an ultraviolet light source that eliminates static electricity with ultraviolet light) that removes static electricity from the surface of the electrostatic chuck 101, and a static eliminator control unit 502 that controls the static eliminator 501 based on the result of the charged voltage detected by a pulse-height value integrated amount-charged voltage conversion unit. Elements similar to those in the first embodiment are designated by the same reference numerals, and redundant explanations will be omitted below.

[0029] As shown in FIG. 6 , a scanning electron microscope (SEM) 1 according to this embodiment includes an electrostatic chuck 101 for attracting a substrate 102, the substrate 102, a positive electrode 103 for generating a Coulomb force for attracting the substrate, a negative electrode 104, a positive power supply 105 for applying a high voltage to the electrodes, a negative power supply 106, a voltage dividing capacitor 107 for dividing and detecting the charge generated on the surface of the electrostatic chuck 101 on the negative electrode 104 side using two series capacitors, a peak-value detection and integration unit 108 for detecting and integrating peak values ​​of the waveform divided by the voltage dividing capacitor 107, a peak-value integration value-to-charge voltage conversion unit 109 for converting the integrated peak-value value into a charge voltage value on the surface of the electrostatic chuck 101, a charge removal device control unit 502 for controlling a charge removal device 501 to remove charge from the surface of the electrostatic chuck 101 after lifting the substrate 102 if the residual attracting force exceeds a predetermined threshold at which the residual attracting force does not become a problem, and a voltage reference ground 112. The pulse-peak value detection and accumulation unit 108, the pulse-peak value accumulation value-charged voltage conversion unit 109, and the static eliminator control unit 502 constitute the controller 100c, and are realized by, for example, a processor such as a CPU (not shown), a ROM for storing various programs, a RAM for temporarily storing data in the calculation process, and a storage device such as an external storage device, and the processor such as the CPU reads and executes the various programs stored in the ROM, and stores the calculation results, which are the execution results, in the RAM, the external storage device, or cloud storage via a network connection, etc.

[0030] Here, the threshold value at which the residual attraction force does not become a problem is set to, for example, 20 mV, which is the integrated value of the voltage dividing capacitor peak value. By controlling in this way, it is possible to remove the charge before a residual attraction force of a level that would damage the substrate 102 occurs when the substrate 102 is lifted.

[0031] As described above, according to this embodiment, the same effects as those of the first embodiment can be achieved.

[0032] The present invention is not limited to the above-described embodiments, but includes various modifications. For example, the above-described embodiments have been described in detail to clearly explain the present invention, and the present invention is not necessarily limited to those including all of the described configurations. Furthermore, it is possible to replace part of the configuration of one embodiment with the configuration of another embodiment, and it is also possible to add the configuration of another embodiment to the configuration of one embodiment. [Explanation of symbols]

[0033] 1. Scanning electron microscope (SEM) 10...electron source 11...Electron beam 12...Condenser lens 13…Primary electron deflector 14...Objective lens 15...Signal electronic deflector 16...Condenser lens (opening angle adjustment lens) 17...Detector 18...Signal electronic aperture 19...Signal electronic deflector 20...Energy filter 21...Detector 22...Arithmetic section 23…Storage section 100,100c...controller 100a...First controller 100b...Second controller 101...Electrostatic chuck 102... Circuit board 103...Positive electrode 104...Negative electrode 105…Positive power supply 106…Negative power supply 107,403...Voltage dividing capacitor 108,404...Civil wave detection and integrating unit 109,405...Chip height integrated value-charge voltage conversion section 110,406... Cancellation voltage control section 111, 401, 402... Cancellation voltage power supply 112...Voltage reference ground 201...Divider capacitor peak value integrated value 202...Charged voltage 501...Static eliminator 502: Static eliminator control section

Claims

1. a scanning deflector that scans a charged particle beam emitted from a charged particle source over a surface of a substrate; a signal electron deflector that deflects the trajectory of signal electrons emitted from the substrate attracted to an electrostatic chuck; and a detector that detects signal electrons obtained based on the scanning of the charged particle beam; the electrostatic chuck has an attraction power supply and an electrode; a voltage dividing capacitor is provided between the electrode and a voltage reference ground; a controller including: a peak value detection and integration unit that integrates peak values ​​of an intermediate voltage waveform of the voltage dividing capacitor; and a peak value integration amount-charged voltage conversion unit that converts the peak value integration value obtained by the peak value detection and integration unit into a charged voltage value on the surface of the electrostatic chuck, the controller includes a cancellation voltage control unit that controls a voltage for canceling out the residual adsorptive force based on the charged voltage value, or a static elimination device control unit that controls a static elimination device that eliminates static electricity using ultraviolet light.

2. The charged particle beam device according to claim 1, a canceling voltage power supply; The charged particle beam device is characterized in that the cancellation voltage control unit determines a voltage having an opposite sign to the charging voltage value before lifting the substrate, and applies the determined opposite voltage to the electrode from the cancellation voltage power supply.

3. The charged particle beam device according to claim 2, the pulse-height-integrated-value-to-charged-voltage conversion unit reads a table showing a correspondence between the pulse-height-integrated value and the charged voltage on the surface of the electrostatic chuck, which is stored in advance, and sets the value as the charged voltage.

4. The charged particle beam device according to claim 2, a first controller including a first voltage dividing capacitor on a negative electrode side of the electrostatic chuck, the peak value detection integrating unit, the peak value integrated amount-to-charged voltage converting unit, and the offset voltage control unit; a second voltage dividing capacitor on the positive electrode side of the electrostatic chuck, and a second controller having the peak value detection integrator, the peak value integrated quantity-charge voltage converter, and the offset voltage controller, A charged particle beam device characterized in that, based on the charging voltage value for each electrode, the opposite voltage is applied to the electrode from a first offset voltage power supply connected to a negative electrode or a second offset voltage power supply connected to a positive electrode.

5. 2. The charged particle beam device according to claim 1, The static eliminator is provided, The charged particle beam device is characterized in that the charge removal device control unit controls the charge removal device to remove electricity from the surface of the electrostatic chuck after lifting the substrate when the charged voltage value exceeds a predetermined threshold.

6. a scanning deflector that scans a charged particle beam emitted from a charged particle source over a surface of a substrate; a signal electron deflector that deflects the trajectory of signal electrons emitted from the substrate attracted to an electrostatic chuck; and a detector that detects signal electrons obtained based on the scanning of the charged particle beam; The electrostatic chuck has an attraction power supply and an electrode, and a method for removing a substrate from the electrostatic chuck includes the steps of: a peak value detection and integration unit that integrates a peak value of a voltage dividing capacitor intermediate voltage waveform between the electrode and a voltage reference ground; a pulse-peak value integrated amount-charged voltage conversion unit converts the pulse-peak value integrated value obtained by the pulse-peak value detection and integration unit into a charged voltage value on the surface of the electrostatic chuck; a counterbalancing voltage control unit controlling a voltage for counterbalancing the residual attracting force based on the charged voltage value, or a static eliminator control unit controlling a static eliminator that eliminates static with ultraviolet light.

7. 7. The method for removing a substrate according to claim 6, comprising: a compensation voltage control unit that determines a voltage having an opposite sign to the charged voltage value before lifting the substrate, and applies the determined opposite voltage to the electrode from a compensation voltage power supply.

8. 8. The method for removing a substrate according to claim 7, comprising: the pulse-peak integrated value-to-charged voltage conversion unit reads a table showing a correspondence between the pulse-peak integrated value and the charged voltage on the surface of the electrostatic chuck, which is stored in advance, and sets the resulting value as the charged voltage value.

9. 8. The method for removing a substrate according to claim 7, comprising: a first controller including a first voltage dividing capacitor on a negative electrode side of the electrostatic chuck, the peak value detection integrating unit, the peak value integrated amount-to-charged voltage converting unit, and the offset voltage control unit; a second voltage dividing capacitor on the positive electrode side of the electrostatic chuck, and a second controller having the peak value detection integrator, the peak value integrated quantity-charge voltage converter, and the offset voltage controller, A method for removing a substrate, comprising applying the opposite voltage to the electrodes from a first offset voltage power supply connected to a negative electrode or a second offset voltage power supply connected to a positive electrode based on the charging voltage value of each electrode.

10. 7. The method for removing a substrate according to claim 6, comprising: The static eliminator is provided, the charge removal device control unit controls the charge removal device to remove electricity from the surface of the electrostatic chuck after lifting the substrate when the charged voltage value exceeds a predetermined threshold.

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