Electronic appliance

Abstract

To provide an electronic appliance having an authentication method with high security.SOLUTION: An electronic appliance includes a pixel part, a sensor part, and an authentication part. The pixel part includes a display element and a light-receiving element. The pixel part includes a first region and has a function of lighting the display element in the first region. The pixel part has a function of imaging a target in contact with the first region using the light-receiving element and acquiring first authentication information. The sensor part includes a second region and has a function of imaging a target in contact with the second region and acquiring second authentication information. The authentication part has a function of performing a first authentication process using the first authentication information. In addition, the authentication part has a function of performing a second authentication process using the second authentication information.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD OF THE INVENTION One aspect of the present invention relates to a display device. One aspect of the present invention relates to an authentication method for a display device. One aspect of the present invention relates to an electronic device. One aspect of the present invention relates to an authentication method for an electronic device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the technical field of one embodiment of the present invention disclosed in this specification and the like include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices, input / output devices, driving methods thereof, and manufacturing methods thereof. A semiconductor device refers to any device that can function by utilizing semiconductor characteristics. [Background technology]

[0003] In recent years, information terminal devices such as smartphones and other mobile phones, tablet information terminals, and notebook PCs (personal computers) have become widespread. These information terminal devices often contain personal information, and various authentication technologies have been developed to prevent unauthorized use.

[0004] For example, Patent Document 1 discloses an electronic device that includes a fingerprint sensor in a push button switch section. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] US Patent Application Publication No. 2014 / 0056493 Summary of the Invention [Problem to be solved by the invention]

[0006] An object of one embodiment of the present invention is to provide an electronic device having an authentication function typified by fingerprint authentication. Another object is to provide an electronic device with high security. Another object is to provide an electronic device with high operability. Another object is to provide a multifunctional electronic device. Another object is to provide a novel electronic device. Another object is to provide an electronic device with a highly secure authentication method. Another object is to provide an electronic device with a novel authentication method.

[0007] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these can be extracted from the description of the specification, drawings, claims, etc. [Means for solving the problem]

[0008] One embodiment of the present invention is an electronic device including a pixel unit, a sensor unit, and an authentication unit. The pixel unit includes a display element and a light-receiving element. The pixel unit has a first region and has a function of turning on the display element in the first region. The pixel unit has a function of capturing an image of an object touching the first region by using the light-receiving element and acquiring first authentication information. The sensor unit has a second region and has a function of capturing an image of an object touching the second region and acquiring second authentication information. The authentication unit has a function of performing first authentication processing by using the first authentication information. The authentication unit also has a function of performing second authentication processing by using the second authentication information.

[0009] In the electronic device described above, the sensor unit is preferably an ultrasonic sensor.

[0010] In the electronic device, the second region is preferably provided on the same surface as the pixel portion.

[0011] In the electronic device, the second region is preferably provided on a surface facing the pixel portion.

[0012] In the electronic device described above, the first region preferably has an area overlapping with the second region.

[0013] In the electronic device described above, it is preferable that the first region does not have an area overlapping with the second region.

[0014] In the electronic device, the pixel unit preferably includes a touch sensor. The touch sensor preferably has a function of detecting the position of an object touching the pixel unit. The pixel unit preferably has a function of lighting up a display element in a first region in the area where the object touches the pixel unit and its vicinity.

[0015] In the electronic device, the object is preferably a finger.

[0016] One embodiment of the present invention is an authentication method for an electronic device including a pixel unit, a sensor unit, and an authentication unit, where the pixel unit includes a display element and a light-receiving element. The electronic device includes a step in which the pixel unit lights up the display element in a first region. The method also includes a step in which the light-receiving element captures an image of an object touching the first region and acquires first authentication information. The method also includes a step in which the authentication unit performs first authentication processing using the first authentication information. The method also includes a step in which the sensor unit captures an image of the object touching the sensor unit and acquires second authentication information. The method also includes a step in which the authentication unit performs second authentication processing using the second authentication information.

[0017] One aspect of the present invention is an authentication method for an electronic device including a pixel unit, a sensor unit, and an authentication unit, where the pixel unit includes a display element, a light-receiving element, and a touch sensor. The electronic device includes a step of using the touch sensor to detect a position of an object touching the pixel unit. The method also includes a step of using the pixel unit to light up a display element at the position touched by the object and in the vicinity thereof. The method also includes a step of using the light-receiving element to capture an image of the object touching the position and in the vicinity thereof and acquire first authentication information. The method also includes a step of using the authentication unit to perform first authentication processing using the first authentication information. The method also includes a step of using the sensor unit to capture an image of the object touching the sensor unit and acquire second authentication information. The method also includes a step of using the authentication unit to perform second authentication processing using the second authentication information.

[0018] In the above-described authentication method for an electronic device, the sensor unit is preferably an ultrasonic sensor. [Effects of the Invention]

[0019] According to one embodiment of the present invention, an electronic device having an authentication function typified by fingerprint authentication can be provided. Alternatively, an electronic device with high security can be provided. Alternatively, an electronic device with high operability can be provided. Alternatively, a multi-functional electronic device can be provided. Alternatively, a novel electronic device can be provided. Alternatively, an electronic device having a highly secure authentication method can be provided. Alternatively, an electronic device having a novel authentication method can be provided.

[0020] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these can be extracted from the description in the specification, drawings, claims, etc. [Brief explanation of the drawings]

[0021] [Figure 1] FIG. 1 is a diagram showing an example of the configuration of a display device. [Figure 2]FIG. 2 is a flowchart illustrating an example of an authentication method. [Figure 3] 3A and 3B are diagrams showing configuration examples of electronic devices. [Figure 4] Fig. 4A is a diagram showing an example of the configuration of an electronic device, and Fig. 4B is a diagram showing an example of authentication information. [Figure 5] Fig. 5A is a diagram showing an example of the configuration of an electronic device, and Fig. 5B is a diagram showing an example of authentication information. [Figure 6] Fig. 6A is a diagram showing an example of the configuration of an electronic device, and Fig. 6B is a diagram showing an example of authentication information. [Figure 7] Fig. 7A is a diagram showing an example of the configuration of an electronic device, and Fig. 7B is a diagram showing an example of authentication information. [Figure 8] FIG. 8 is a flowchart illustrating an example of an authentication method. [Figure 9] FIG. 9 is a diagram illustrating an example of the configuration of an electronic device. [Figure 10] FIG. 10 is a flowchart illustrating an example of an authentication method. [Figure 11] 11A and 11B are diagrams showing configuration examples of electronic devices. [Figure 12] FIG. 12 is a diagram illustrating an example of the configuration of a display device. [Figure 13] FIG. 13 is a flowchart illustrating an example of an authentication method. [Figure 14] 14A and 14B are diagrams showing configuration examples of electronic devices. [Figure 15] 15A to 15D are diagrams showing configuration examples of electronic devices. [Figure 16] 16A to 16D are diagrams showing configuration examples of electronic devices. [Figure 17] 17A to 17D are cross-sectional views showing an example of a display device, and FIGS. 17E to 17G are top views showing an example of a pixel. [Figure 18] 18A to 18D are top views showing an example of a pixel. [Figure 19] 19A to 19E are cross-sectional views showing examples of light emitting and receiving elements. [Figure 20] 20A and 20B are cross-sectional views showing an example of a display device. [Figure 21] 21A and 21B are cross-sectional views showing an example of a display device. [Figure 22] 22A and 22B are cross-sectional views showing an example of a display device. [Figure 23] 23A and 23B are cross-sectional views showing an example of a display device. [Figure 24] 24A and 24B are cross-sectional views showing an example of a display device. [Figure 25] FIG. 25 is a perspective view showing an example of a display device. [Figure 26] FIG. 26 is a cross-sectional view showing an example of a display device. [Figure 27] FIG. 27 is a cross-sectional view showing an example of a display device. [Figure 28] 28A is a cross-sectional view showing an example of a display device, and FIG 28B is a cross-sectional view showing an example of a transistor. [Figure 29] 29A is a cross-sectional view showing an example of a display device, and FIG 29B is a cross-sectional view showing an example of a transistor. [Figure 30] 30A and 30B are diagrams showing an example of an electronic device. [Figure 31] 31A to 31D are diagrams showing an example of an electronic device. [Figure 32] 32A to 32F are diagrams showing an example of an electronic device. DETAILED DESCRIPTION OF THE INVENTION

[0022] Hereinafter, embodiments will be described with reference to the drawings. However, it will be readily understood by those skilled in the art that the embodiments can be implemented in many different ways and that various changes in form and details can be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the following description of the embodiments.

[0023] In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and repeated explanations thereof will be omitted. In addition, when referring to similar functions, the same hatch pattern may be used and no particular reference numeral may be assigned.

[0024] In the drawings described in this specification, the size of each component, the thickness of a layer, or an area may be exaggerated for clarity, and therefore, the drawings are not necessarily limited to the scale.

[0025] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components and do not limit the number.

[0026] In the following description, expressions indicating directions such as "up" and "down" are basically used in accordance with the directions in the drawings. However, for purposes such as facilitating explanation, the directions indicated by "up" or "down" in the specification may not match those in the drawings. For example, when explaining the stacking order (or formation order) of a laminate, etc., even if the surface on which the laminate is provided in the drawing (such as the surface to be formed, the supporting surface, the adhesive surface, or the flat surface) is located above the laminate, the direction may be expressed as "down" and the opposite direction as "up."

[0027] In this specification and the like, a display panel, which is one aspect of a display device, has a function of displaying (outputting) images etc. on a display surface, and therefore the display panel is one aspect of an output device.

[0028] In this specification, a display panel having a connector such as an FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package) attached to the substrate, or having an IC mounted on the substrate using a COG (Chip On Glass) method or the like, may be referred to as a display panel module, display module, or simply a display panel.

[0029] In this specification and the like, a touch panel, which is one aspect of a display device, has a function of displaying an image or the like on a display surface and a function as a touch sensor that detects that a detectable object such as a finger or a stylus touches, presses, or approaches the display surface. Thus, the touch panel is one aspect of an input / output device.

[0030] A touch panel can also be called, for example, a display panel (or display device) with a touch sensor or a display panel (or display device) with a touch sensor function. A touch panel can have a configuration including a display panel and a touch sensor panel. Alternatively, the touch panel can have a touch sensor function inside or on the surface of the display panel.

[0031] In this specification, a touch panel substrate on which a connector or an IC is mounted may be called a touch panel module, a display module, or simply a touch panel.

[0032] (Embodiment 1) In this embodiment, a display device and an electronic device which are one embodiment of the present invention will be described.

[0033] A display device which is one embodiment of the present invention includes a pixel portion, a sensor portion, and an authentication portion.

[0034] The pixel unit has display elements and light-receiving elements arranged in a matrix. Part of the light emitted by the display elements is reflected by an object, and the reflected light is incident on the light-receiving elements. The light-receiving elements can output an electrical signal according to the intensity of the incident light. Therefore, by having light-receiving elements arranged in a matrix, the pixel unit can acquire (or capture) data on the position or shape of an object (subject) that touches or is close to the pixel unit. In other words, the pixel unit not only has the function of displaying an image, but can also function as an image sensor panel or an optical sensor.

[0035] The pixel unit has a function of capturing an image of an object touching the pixel unit by using a light receiving element and acquiring first authentication information. The sensor unit has a function of capturing an image of an object touching the sensor unit and acquiring second authentication information. For example, an ultrasonic sensor can be suitably used as the sensor unit. The authentication unit has a function of performing first authentication processing by using the first authentication information. The authentication unit has a function of performing second authentication processing by using the second authentication information. A display device according to one embodiment of the present invention can improve security by performing a plurality of different authentication methods.

[0036] The object to be imaged may be, for example, a finger or a palm. When the object is a finger, a fingerprint image may be used as the first authentication information and the second authentication information. When the object is a palm, a palmprint image may be used as the first authentication information and the second authentication information. Note that the object used for the first authentication information and the object used for the second authentication information may be different. For example, a palmprint image may be used for the first authentication information, and a fingerprint image may be used for the second authentication information. Security can be increased by performing authentication using different objects.

[0037] <Display device configuration example 1> FIG. 1 shows a block diagram of a display device 400 according to one embodiment of the present invention. The display device 400 includes a control unit 401, a pixel unit 402, a sensor unit 403, and a storage unit 404. The control unit 401 includes an authentication unit 407. The pixel unit 402 includes a display element 405 and a light-receiving element 406. The display device 400 can be used in electronic devices such as personal digital assistants (PDAs), for example.

[0038] Here, an example will be described in which the object to be imaged is a finger.

[0039] In the drawings attached to this specification, the components are classified by function and shown as block diagrams that are independent of each other; however, in reality, it is difficult to completely separate the components by function, and one component may be involved in multiple functions, or one function may be realized by multiple components.

[0040] The control unit 401 has a function of performing overall control of the system of the display device 400. The control unit 401 also has a function of controlling each of the components of the display device 400 in an integrated manner.

[0041] The control unit 401 functions as, for example, a central processing unit (CPU). The control unit 401 performs various data processing or program control by interpreting and executing instructions from various programs using a processor. The programs that can be executed by the processor may be stored in a memory area of ​​the processor or may be stored in the storage unit 404.

[0042] The control unit 401 has functions such as generating image data to be output to the pixel unit 402, processing first authentication information input from the light receiving element 406 of the pixel unit 402, processing second authentication information input from the sensor unit 403, and controlling the lock state of the display device 400.

[0043] The pixel unit 402 has a function of displaying an image using the display element 405 based on image data input from the control unit 401. The pixel unit 402 can capture an image of an object (subject) that touches or is close to the pixel unit 402. For example, part of the light emitted by the display element 405 is reflected by the object, and the reflected light is incident on the light receiving element 406. The light receiving element can output an electrical signal according to the intensity of the incident light, and the pixel unit 402 has a plurality of light receiving elements 406 arranged in a matrix, so that it can acquire (capture) position information or shape of the object as data. It can be said that the pixel unit 402 functions as an image sensor panel or an optical sensor.

[0044] The pixel unit 402 has a function of acquiring first authentication information of the user using the light receiving element 406 and outputting the first authentication information to the control unit 401. As the first authentication information, for example, an image of a fingerprint of the user who touches the pixel unit 402 (also referred to as a first captured image or first captured data) can be used. The pixel unit 402 can acquire the first authentication information by capturing an image of the fingerprint of the user who touches the pixel unit 402 using the light receiving element 406.

[0045] Since the pixel unit 402 having the function of an optical sensor can acquire color information of the object, the color information may be included in the first authentication information. For example, if the object is a finger, skin color information can be acquired as the first authentication information in addition to fingerprint information.

[0046] The sensor unit 403 has a function of acquiring second authentication information of the user and outputting the second authentication information to the control unit 401. As the second authentication information, for example, an image of the fingerprint of the user who touches the display device 400 (also referred to as a second captured image or second captured data) can be used. The sensor unit 403 can be an ultrasonic sensor, an optical sensor, a capacitance sensor, or the like. An ultrasonic sensor can be particularly preferably used as the sensor unit 403.

[0047] An ultrasonic sensor emits ultrasonic waves and detects the waves reflected by an object, thereby obtaining three-dimensional information about the unevenness of the object. Since ultrasonic waves pass through the skin, if the object is a human finger, it can detect not only the unevenness of the finger (fingerprint) but also the blood flow inside the skin. By using an ultrasonic sensor for the sensor unit 403, the second authentication information can be obtained with high sensitivity.

[0048] The storage unit 404 has a function of storing user information of pre-registered users. For example, fingerprint information of the user can be used as the user information. The storage unit 404 can output the user information to the authentication unit 407 in response to a request from the control unit 401.

[0049] It is preferable that the storage unit 404 stores fingerprint information for all fingers that the user uses for authentication. For example, fingerprint information for two fingers, one for the index finger of the user's right hand and one for the index finger of the user's left hand, can be stored. The user can freely register fingerprint information for one or more of the index finger, middle finger, ring finger, little finger, and thumb, and the storage unit 404 can store information for all registered fingerprints.

[0050] The control unit 401 has a function of, when the user is authenticated in the user authentication performed by the authentication unit 407, transitioning the system from a locked state to a state in which the system is unlocked and the display device 400 can be used.

[0051] The control unit 401 has a function of turning on the display element 405 of the pixel unit 402 when it detects an operation on the display device 400 while the system of the display device 400 is in a locked state. Furthermore, the control unit 401 has a function of requesting the pixel unit 402 to capture an image of a fingerprint with the display element 405 turned on.

[0052] The control unit 401 may have a function to generate image data including an image indicating the position to be touched by the user (also called an image informing the touch position) in the pixel unit 402 when the system of the display device 400 is in a locked state, and output the image data to the pixel unit 402.

[0053] The authentication unit 407 has a function of executing a process (first authentication process) of comparing first authentication information input from the pixel unit 402 with fingerprint information held in the storage unit 404 and determining whether they match. The authentication unit 407 also has a function of executing a process (second authentication process) of comparing second authentication information input from the sensor unit 403 with fingerprint information held in the storage unit 404 and determining whether they match.

[0054] The first authentication process and the second authentication process may each use a method such as a template matching method or a pattern matching method that compares two images and uses the similarity between them. The first authentication process and the second authentication process may each use a minutia method that compares feature points (Minutia) such as endpoints and bifurcations of image patterns. The first authentication process and the second authentication process may also use inference using machine learning. In this case, it is preferable that the first authentication process and the second authentication process are each performed by inference using a neural network. The first authentication process and the second authentication process may use the same method or different methods.

[0055] The display device 400 of one embodiment of the present invention can be a display device with high security by performing multi-step authentication including first authentication and second authentication (hereinafter also referred to as multi-step authentication). For example, the display device 400 of one embodiment of the present invention can use first authentication information acquired by the pixel portion 402 having a function as an optical sensor for the first authentication and second authentication information acquired by the sensor portion 403 using an ultrasonic sensor for the second authentication. The display device 400 of one embodiment of the present invention can further improve security by performing a plurality of different authentication methods.

[0056] If the first authentication information includes color information, the first authentication process may be performed using the color information. By using color information in addition to fingerprint information in the first authentication process, a display device with higher security can be obtained.

[0057] <Authentication method example 1> The following describes an example of an authentication method using display device 400. Here, an operation of authenticating a user using a fingerprint will be described as an authentication method for an electronic device to which display device 400 is applied.

[0058] A flowchart relating to the operation of an authentication method using display device 400 is shown in FIG. 2. Electronic device 420 to which display device 400 is applied is shown in FIG. 3A. Electronic device 420 has a housing 421 and a pixel unit 422. Electronic device 420 has, within housing 421, the above-described control unit 401, sensor unit 403, and memory unit 404. The above-described pixel unit 402 can be applied to pixel unit 422.

[0059] First, the process starts. At this time, the system of the electronic device 420 is locked, and the functions that the user can execute are limited (including a logged-out state and a logged-off state).

[0060] In step S11, a user operation on the electronic device 420 is detected. Methods for detecting a user operation include, for example, turning on the power of the electronic device 420, pressing a physical button, detecting the user's line of sight, an increase in ambient light, or a significant change in the attitude of the electronic device 420. If an operation is detected, the process proceeds to step S12. Step S11 is repeatedly executed until an operation is detected.

[0061] Subsequently, in step S12, the display elements 405 included in the pixel unit 422 are turned on. Light emitted from the display elements 405 can be used as a light source when capturing an image with the light receiving elements 406. Therefore, the turned on display elements 405 can be display elements that emit light that can be received by the light receiving elements 406. For example, if the pixel unit 422 has display elements 405 of three colors, red (R), green (G), and blue (B), any one, any two, or all three of these display elements 405 can be turned on.

[0062] In step S12, all the display elements 405 of the pixel portion 422 may be turned on, or some of the display elements 405 of the pixel portion 422 may be turned on. In this specification and the like, the region from which the first authentication information is acquired may be referred to as the first region. FIG. 3B shows an example in which all the display elements 405 of the pixel portion 422 are turned on, that is, the entire surface of the pixel portion 422 is the first region 425. The user can perform the first authentication by touching the first region 425. When the entire surface of the pixel portion 422 is the first region 425, the user can perform the first authentication by touching any region of the pixel portion 422.

[0063] When part of the display elements 405 of the pixel portion 422 is turned on, that is, when part of the pixel portion 422 is used as the first region 425, the user can perform the first authentication by touching the first region 425. The display elements 405 other than the first region 425 may be turned off. The lit display elements 405 in the first region 425 are covered by the finger 430, preventing the user from viewing the bright light. In other words, the user can be prevented from directly viewing the light for the first authentication. For example, in a dark environment, if the user were to directly view the light for the first authentication, the user would feel dazzled and there is a risk of the light damaging their eyes. Therefore, by turning on only the first region 425, the burden on the user can be reduced. Note that any image may be displayed in a region other than the first region 425.

[0064] In step S12, the brightness of the illuminated display element 405 can be changed as appropriate depending on the brightness of the usage environment or the sensitivity of the light receiving element 406, but it is preferable to illuminate it as brightly as possible. For example, if the brightness or gradation value when the display element 405 is illuminated most brightly is 100%, the brightness or gradation value can be set to 50% or more and 100% or less, preferably 70% or more and 100% or less, and more preferably 80% or more and 100% or less.

[0065] Subsequently, in step S13, first authentication information is acquired using the light receiving element 406. The first authentication information is output from the pixel unit 422 to the control unit 401 as image data (first image data) captured by the light receiving element 406. The region where the image is captured can be the first region 425.

[0066] In step S12, when all display elements 405 of pixel unit 422 are turned on, that is, when the entire surface of pixel unit 422 is used as first region 425, all light receiving elements 406 of pixel unit 422 are operated to acquire first authentication information. Fig. 4A shows a state in which the entire surface of pixel unit 422 is used as first region 425, and a finger 430 is touched to first region 425 to capture an image of a fingerprint as first image data. Fig. 4B shows an example of image data of the captured fingerprint (first image data) as first authentication information 451.

[0067] In step S12, when part of the display elements 405 of the pixel unit 422 is turned on, that is, when part of the pixel unit 422 is set as the first region 425, the light receiving elements 406 of the first region 425 are operated to acquire the first authentication information. The first region can be said to be part of the pixel unit 422. FIG. 5A shows a state in which part of the pixel unit 422 is set as the first region 425, and a finger 430 is touched to the first region 425 to capture an image of the fingerprint as first image data. FIG. 5B shows an example of image data of the captured fingerprint (first image data) as first authentication information 451. Note that even when part of the pixel unit 422 is set as the first region 425 in step S12, all of the light receiving elements 406 of the pixel unit 422 may be operated to acquire the first authentication information.

[0068] The position of first area 425 may be the same each time the process is executed, but it is preferable that the position be different each time the process is executed. That is, each time the process is executed, the user can perform the first authentication by touching a location that is randomly displayed in a different position.

[0069] For example, if a fingerprint is captured at the same position every time, the display element 405, which is turned on as a light source for capturing a fingerprint, and the transistors constituting the pixels are likely to deteriorate, which may result in problems such as a decrease in the luminance of the display element 405 and image sticking on the screen. Therefore, by performing fingerprint authentication at a different position every time the process is executed as described above, it is possible to suppress a decrease in the luminance of the display element 405 and image sticking on the screen.

[0070] By performing fingerprint authentication at a different position each time a process is executed, the user is required to actively perform an action for authentication, which can improve the user's security awareness.

[0071] The pixel portion 422 may be provided with a plurality of first regions 425, and may be touched with two or more fingers simultaneously to perform the first authentication based on two or more pieces of fingerprint information. Alternatively, the first authentication may be performed multiple times, such as by performing the first authentication with one finger and, if authenticated, performing the first authentication with a different finger.

[0072] By performing the first authentication using multiple pieces of fingerprint information instead of using only one piece of fingerprint information, it is possible to provide a highly secure electronic device 420. For example, even if a malicious user fraudulently obtains fingerprint information of a true user (owner) and uses electronic device 420, electronic device 420 cannot be used unless fingerprint information of multiple (preferably all) fingers is available, and fraudulent use can be suitably prevented.

[0073] When the first authentication is performed multiple times, the processes from step S12 to step S14 can be performed multiple times. For example, when performing two-step authentication, the authentication process can be performed using the fingerprint of the middle finger of the right hand in the first process, and if authenticated, the authentication process can be performed using the fingerprint of the ring finger of the left hand in the second process, and if authenticated, the process can proceed to step S15. It is also preferable to randomly change the fingers used in the first and second processes for each process.

[0074] Next, in step S14, authentication unit 407 executes a first authentication process. Specifically, authentication unit 407 compares the first authentication information (first image data) output from pixel unit 422 with the user's fingerprint information that has been registered in advance and stored in storage unit 404, and determines whether they match. If authentication is successful, that is, if it is determined that the first authentication information matches the user's fingerprint information, the process proceeds to step S15. If authentication is not successful, that is, if it is determined that the first authentication information does not match the user's fingerprint information, the process ends. Note that if two or more pieces of fingerprint information are stored in storage unit 404, the first authentication process is executed for all of the fingerprint information.

[0075] Next, in step S15, a position image for performing the second authentication is displayed on pixel unit 422. The position image includes an image indicating the position to be touched by the user, an image informing the user of the touch position, text information urging the user to touch, etc.

[0076] Specifically, the control unit 401 generates image data including a position image and outputs the image data to the pixel unit 422, whereby an image based on the image data is displayed on the pixel unit 422. The area where the position image is displayed is the area where second authentication information is acquired using the sensor unit 403. Note that in this specification and the like, the area where the second authentication information is acquired may be referred to as the second area. The user can perform the second authentication by touching the second area 427. FIG. 6A shows a state where an image 428 is displayed on the second area 427 and a finger 430 is about to touch the second area 427.

[0077] 6A shows an example in which image 428 has an illustration of a fingerprint and the words "Touch Here" as text information to encourage the user to touch. By adding text information in addition to an illustration, the location can be shown to the user in an easy-to-understand manner.

[0078] As image 428, it is possible to display not only the touch position but also an image or text information specifying the finger to touch. For example, text information such as "Please touch with your middle finger" can be displayed, and in the subsequent second authentication process, authentication can be performed using fingerprint information of the middle finger. As with the touch position, the specified finger can also be randomly changed for each process.

[0079] 6A shows a structure in which the second region 427 is provided in the pixel portion 422, that is, a structure in which the pixel portion 422 overlaps with the second region 427; however, one embodiment of the present invention is not limited to this. A structure in which the second region is provided outside the pixel portion 422 may be used. By providing the second region 427 in the pixel portion 422, the frame size of the electronic device 420 can be reduced.

[0080] 6A shows a configuration in which the image 428 is displayed in the second region 427; however, one embodiment of the present invention is not limited to this. The image 428 may not be displayed in the second region 427, and the display element 405 of the second region 427 may be turned on to show the second region 427 to the user.

[0081] Subsequently, in step S16, second authentication information is acquired using sensor unit 403. The second authentication information is output from sensor unit 403 to control unit 401 as image data (second image data) captured by sensor unit 403. FIG. 6B shows an example of image data (second image data) of a captured fingerprint as second authentication information 453.

[0082] Next, in step S17, authentication unit 407 executes a second authentication process. Specifically, authentication unit 407 compares the second authentication information (second image data) output from sensor unit 403 with the user's fingerprint information that has been registered in advance and stored in storage unit 404, and determines whether they match. If authentication is successful, the process proceeds to step S18. If authentication is not successful, the process ends. Note that if two or more pieces of fingerprint information are stored in storage unit 404, the second authentication process is executed for all of the fingerprint information.

[0083] In step S18, the control unit 401 shifts the system of the electronic device 420 to an unlocked state (including a logged-in state).

[0084] This concludes the description of the flowchart shown in FIG.

[0085] The electronic device 420, which is one embodiment of the present invention, can acquire first authentication information using the light-receiving element 406 to perform first authentication, and can acquire second authentication information using the sensor unit 403 to perform second authentication. By using a plurality of different authentication methods, security can be extremely high. For example, even if a malicious user illegally acquires fingerprint information of a true user (owner) and uses the electronic device 420, unauthorized use can be suitably prevented.

[0086] Note that although an example in which the first region 425 and the second region 427 are different is shown, one embodiment of the present invention is not limited to this. The first region 425 and the second region 427 may be located in the same position. The first region 425 and the second region 427 may have the same size. Furthermore, the finger used for the first authentication and the finger used for the second authentication may be the same or different.

[0087] When the same finger is used for the first authentication and the second authentication, it is preferable that the first region 425 and the second region 427 are in the same position. By configuring the first authentication and the second authentication to be performed in the same position, the user can perform the first authentication and the second authentication while keeping a finger in touch with the pixel portion 422, thereby improving the operability of the electronic device 420.

[0088] When different fingers are used for the first authentication and the second authentication, first region 425 and second region 427 can be located in different positions. By using different fingers for the first authentication and the second authentication, electronic device 420 can be made highly secure. It is preferable that the position of first region 425 can be set arbitrarily by the user. For example, as shown in FIG. 5A, first authentication can be performed with the index finger of the right hand, and as shown in FIG. 7A, second authentication can be performed with the thumb of the left hand. By setting the position of first region 425 arbitrarily by the user, electronic device 420 can be made highly operable. FIG. 7B shows an example of image data of a captured fingerprint (second image data) as second authentication information 453.

[0089] The electronic device 420 of one embodiment of the present invention can be a display device with high security by performing multi-step authentication including first authentication and second authentication (hereinafter also referred to as multi-step authentication). For example, the electronic device 420 of one embodiment of the present invention can use first authentication information acquired by the pixel portion 422 having a function as an optical sensor for the first authentication and second authentication information acquired by the sensor portion 403 using an ultrasonic sensor for the second authentication. The electronic device 420 of one embodiment of the present invention can further improve security by performing a plurality of different authentication methods.

[0090] 2 shows a configuration in which the second authentication is performed after the first authentication, but one embodiment of the present invention is not limited to this. The first authentication may be performed after the second authentication. In this case, for example, steps S12 to S14 related to the first authentication may be performed after steps S15 to S17 related to the second authentication. Furthermore, steps S12 to S14 related to the first authentication and steps S15 to S17 related to the second authentication may be performed in parallel.

[0091] When the first region 425 and the second region 427 are located in the same position, the electronic device 420 can generate a composite image by adding together the first image data acquired in the first region 425 and the second image data acquired in the second region 427. For example, the first image acquired by the pixel portion 422 includes color information of an object, and the second image acquired by the sensor portion 403 to which an ultrasonic sensor is applied includes three-dimensional information of the object. A color three-dimensional image can be obtained by adding together the first image and the second image. The electronic device 420, which is one embodiment of the present invention, can also function as a color three-dimensional scanner. With the above-described configuration, the electronic device can be a multifunctional electronic device.

[0092] <Authentication method example 2> An example of an authentication method different from that shown in Fig. 2 will now be described. Fig. 8 shows a flowchart relating to the operation of the authentication method.

[0093] First, the process starts. At this time, the system of the electronic device 420 is locked, and the functions that the user can execute are limited (including a logged-out state and a logged-off state).

[0094] In step S11, a user operation is detected on the electronic device 420. As the above description can be referred to for step S11, a detailed description thereof will be omitted.

[0095] Next, in step S21, image 426 is displayed in first area 425. Fig. 9 shows an example of displaying image 426 in first area 425. For image 426, the description of image 428 above can be referred to, and therefore a detailed description thereof will be omitted.

[0096] Next, in step S22, the display elements 405 in the first region 425 are turned on. The user can perform the first authentication by touching the first region 425. As the description of step S12 can be referred to for step S22, a detailed description thereof will be omitted. Note that in step S22, all the display elements 405 in the pixel portion 422 may be turned on.

[0097] For the subsequent steps S13 to S18, the description in <Example of Authentication Method 1> can be referred to, and therefore detailed description will be omitted.

[0098] This concludes the description of the flowchart shown in FIG.

[0099] <Authentication method example 3> An example of an authentication method different from that shown in Fig. 2 will be described. A flowchart relating to the operation of the authentication method is shown in Fig. 10. The flowchart shown in Fig. 10 differs from the flowchart shown in Fig. 2 mainly in that it does not include step S15.

[0100] First, the process starts. At this time, the system of the electronic device 420 is locked, and the functions that the user can execute are limited (including a logged-out state and a logged-off state).

[0101] For steps S11 to S14, the description relating to FIG. 2 can be referred to, and therefore detailed description thereof will be omitted.

[0102] Subsequently, in step S16, second authentication information is acquired using the sensor unit 403. The second authentication information is output from the sensor unit 403 to the control unit 401 as image data captured by the sensor unit 403 (second image data).

[0103] 11A shows a state in which a second region 427 is provided outside the pixel portion 422, and a finger 430 is touched to the second region 427 to capture an image of a fingerprint as second image data. Also, a display 429 indicating a position for performing second authentication may be provided in the second region 427. The display 429 includes a figure, a character, or the like indicating a position to be touched by the user.

[0104] 11A shows a structure in which the second region 427 is provided outside the pixel portion 422 on a surface (display surface) of the electronic device 420 having the pixel portion 422, that is, a structure in which the pixel portion 422 does not have a region overlapping with the second region 427; however, one embodiment of the present invention is not limited to this. As shown in FIG. 11B, a structure in which the second region 427 is provided on a surface (surface facing the display surface) of the electronic device 420 facing the pixel portion 422 may be used. When the second region 427 is provided on a surface of the electronic device 420 facing the pixel portion 422, the pixel portion 422 may have a region overlapping with the second region 427. Since there is no need to provide the second region 427 outside the pixel portion 422 on a surface (display surface) of the electronic device 420 having the pixel portion 422, the frame of the electronic device 420 can be made smaller.

[0105] 11B shows a configuration in which the second region 427 is provided on a surface facing the pixel portion 422; however, one embodiment of the present invention is not limited to this. For example, the second region 427 may be provided on a surface of the electronic device 420 where the pixel portion 422 is not provided (for example, one or more of the top surface, bottom surface, and side surface of the electronic device 420). Furthermore, the pixel portion 422 (first region 425) may be provided on one or more of the surface facing the display surface of the electronic device 420, the top surface, bottom surface, and side surface. With such a configuration, the first authentication and the second authentication can be performed at any position on the electronic device 420, resulting in a highly convenient electronic device.

[0106] Regarding the subsequent steps S16 to S18, the description relating to FIG. 2 can be referred to, and therefore detailed description thereof will be omitted.

[0107] This concludes the description of the flowchart shown in FIG.

[0108] <Display device configuration example 2> A configuration example different from the above-described display device 400 will be described. A block diagram of a display device 400A according to one embodiment of the present invention is shown in FIG. 12. The display device 400A differs from the above-described display device 400 mainly in that a pixel portion 402 includes a touch sensor 408.

[0109] The touch sensor 408 has a function of detecting that the pixel portion 402 has been touched, and a function of obtaining touched position information and outputting it to the control unit 401 .

[0110] The control unit 401 has a function of processing position information of a detected object input from the touch sensor 408. Furthermore, when the system of the display device 400A is in a locked state and a touch operation is detected by the touch sensor 408 and information on the touched position is output, the control unit 401 has a function of generating image data and outputting the image data to the pixel unit 402 so as to light up the display element 405 at the touched position for the pixel unit 402. Furthermore, the control unit 401 has a function of requesting the pixel unit 402 to capture an image of a fingerprint with the display element 405 turned on.

[0111] When the system of the display device 400A is in a locked state, the control unit 401 may have a function of generating image data including an image (position image) indicating a position to be touched by a user in the pixel unit 402, and outputting the image data to the pixel unit 402. The pixel unit 402 also has a function of acquiring position information of a detectable object such as a finger using the touch sensor 408, and outputting the position information to the control unit 401.

[0112] It is preferable that the pixel portion 402 can acquire fingerprint information of a finger that touches anywhere on the pixel portion 402. That is, it is preferable that the range on the pixel portion 402 where the touch sensor 408 functions and the range where fingerprint information can be acquired match or approximately match.

[0113] <Authentication method example 4> An example of an authentication method for the above-mentioned display device 400A will be described. FIG. 13 shows a flowchart relating to the operation of the authentication method using the display device 400A. FIG. 14A shows an electronic device 420A to which the display device 400A is applied. The electronic device 420A has a housing 421 and a pixel unit 422. The electronic device 420A has the above-mentioned control unit 401, sensor unit 403, and memory unit 404 inside the housing 421. The above-mentioned pixel unit 402 can be applied to the pixel unit 422.

[0114] First, the process starts with the system of the electronic device 420A locked.

[0115] In step S31, it is detected whether or not the pixel unit 422 has been touched. The touch detection is performed by the touch sensor 408. If a touch is detected, the process proceeds to step S32. Step S31 is repeatedly performed until a touch is detected. If a touch is not detected for a certain period of time, or if a different position is touched, the process ends.

[0116] In step S32, position information of the touch position is acquired. The position information is output from the touch sensor 408 to the control unit 401.

[0117] In step S33, the display elements 405 located at and near the touch position are turned on based on the position information. The touch position and its vicinity can be defined as a first region 425. At this time, the control unit 401 generates image data in which the first region 425 is bright (high gradation value) and the other parts are dark (low gradation value), and outputs the image data to the pixel unit 422, whereby an image based on the image data is displayed on the pixel unit 422.

[0118] In step S33, the first area 425 may be brightly displayed (lit) and the other areas may be turned off. Note that an arbitrary image may be displayed in an area other than the first area 425.

[0119] The area (first area 425) in which the display element 405 is illuminated is preferably an area hidden by the finger. When touching the screen with a finger, the contact surface of the finger is located inside the outline of the finger as seen from the user, and the projected area of ​​the finger on the screen is larger than the contact area of ​​the finger. Therefore, when the contact area is 100%, the illuminated area can be 50% to 150%, preferably 70% to 130%, and more preferably 80% to 120%. If the illuminated area is smaller than 50%, the fingerprint information obtained by imaging may be insufficient, which may reduce the accuracy of authentication. On the other hand, if the illuminated area exceeds 150%, the light source may be directly visible to the user.

[0120] The illuminated area may be a circle with a radius r centered on the touch position, and the value of the radius r may be set in advance. Since the size and shape of fingers vary depending on the age, gender, physique, etc. of the user, the radius r of the circle that defines the illuminated area may be set by the user.

[0121] FIG. 14A shows a state in which the area where the touch is detected by the touch sensor 408 and its vicinity are designated as a first area 425, and the display element 405 in the first area 425 is illuminated. FIG. 14B shows the finger 430 in FIG. 14A as a transparent image, with only the outline indicated by a dashed line, and the first area 425 hatched. As shown in FIGS. 14A and 14B, the brightly illuminated first area 425 is hidden by the finger 430 and is difficult for the user to see. This allows fingerprint authentication to be performed without causing stress to the user. Furthermore, the electronic device 420A can perform fingerprint authentication at any position within the pixel unit 422.

[0122] Regarding the subsequent steps S14 to S18, the description relating to FIG. 2 can be referred to, and therefore detailed description thereof will be omitted.

[0123] This concludes the description of the flowchart shown in FIG.

[0124] <Example of electronic device configuration> 15A to 16D show schematic diagrams of electronic device 420. Figures 15A to 16D are cross-sectional views taken along dashed line AB in Figure 3A. In addition, in Figures 15A to 16D, first region 425 and second region 427 are indicated by arrows, respectively.

[0125] The electronic device 420 includes a housing 421, a layer 441, and a layer 443. The layer 441 includes a pixel portion 422. The layer 443 includes a sensor portion 403. A control unit 401 and a memory unit 404 can be provided in a space 445 inside the housing 421. Note that the control unit 401 and the memory unit 404 may be provided in the layer 441 or the layer 443. Although not shown, electronic components such as a communication antenna and a storage battery can be provided in the space 445.

[0126] 15A shows an example in which the first region 425 is provided over the entire surface of the pixel portion 422, and the second region 427 is provided in a part of the pixel portion 422. That is, there is an overlapping region between the first region 425 and the second region 427. In the configuration shown in FIG. 15A, the first authentication information can be acquired at any position in the pixel portion 422.

[0127] 15B shows an example in which the first region 425 is provided in a part of the pixel portion 422, and the second region 427 is provided in a part of the pixel portion 422. By providing the first region 425 in a part of the pixel portion 422, only a part of the display element 405 is lit, which reduces the power consumption of the electronic device 420. Although FIG. 15B shows a configuration in which there is no overlapping region between the first region 425 and the second region 427, as shown in FIG. 15C, there may be a configuration in which there is an overlapping region between the first region 425 and the second region 427.

[0128] 15D shows an example in which the first region 425 and the second region 427 are located in the same position. By locating the first region 425 and the second region 427 in the same position, the user can acquire the first authentication information and the second authentication information while keeping a finger in contact with the pixel portion 422, thereby improving the operability of the electronic device 420.

[0129] 15A to 15D show a configuration in which the second region 427 is provided in the pixel portion 422, and the second authentication information is acquired within the pixel portion 422. The layer 443 having the sensor portion 403 is preferably fixed to the layer 441 having the pixel portion 422. For example, the layer 443 is fixed to the layer 441 by an adhesive layer (not shown). It is also preferable that there is no space between the layer 443 and the layer 441. By adopting a configuration in which there is no space (air) between the layer 443 and the layer 441, when a fingerprint sensor using ultrasonic waves is used for the sensor portion 403, it is possible to suppress attenuation of ultrasonic waves due to air, and it is possible to acquire the second authentication information with high sensitivity.

[0130] 16A shows an example in which the first region 425 is provided over the entire surface of the pixel portion 422, and the second region 427 is provided outside the pixel portion 422. As shown in Fig. 16B, the first region 425 may be provided in a part of the pixel portion 422. Figs. 16A and 16B show a configuration in which the first region 425 and the second region 427 do not have an overlapping region, and the first authentication information and the second authentication information are acquired on the same surface (display surface) as the pixel portion 422 of the electronic device 420.

[0131] 16A and 16B show an example in which the layer 443 is exposed; however, one embodiment of the present invention is not limited to this. The layer 443 may be provided inside the housing 421. In the case where the layer 443 is provided inside the housing 421, the layer 443 is preferably fixed to the housing 421. The layer 443 is fixed to the housing 421 with an adhesive layer (not shown). In addition, it is preferable that there be no space between the layer 443 and the housing 421. By providing a structure in which there is no space (air) between the layer 443 and the housing 421, when a fingerprint sensor using ultrasound is used for the sensor portion 403, attenuation of ultrasound due to air can be suppressed, and the second authentication information can be acquired with high sensitivity.

[0132] 16C shows an example in which the first region 425 is provided on the entire surface of the pixel portion 422, and the second region 427 is provided on a surface facing the pixel portion 422 of the electronic device 420 (surface facing the display surface). As shown in Fig. 16D, the first region 425 may be provided in a part of the pixel portion 422. Figs. 16C and 16D show a configuration in which the first authentication information is acquired on the same surface (display surface) as the pixel portion 422 of the electronic device 420, and the second authentication information is acquired on a surface facing the pixel portion 422 (surface facing the display surface).

[0133] 16C and 16D, a space (air) may exist between the layer 443 and the layer 441. Note that although an example of a structure in which the layer 443 is exposed is shown in FIGS. 16C and 16D, one embodiment of the present invention is not limited to this. The layer 443 may be provided inside the housing 421, and when the layer 443 is provided inside the housing 421, the layer 443 is preferably fixed to the housing 421. The layer 443 is fixed to the housing 421 by an adhesive layer (not shown). It is also preferable that there be no space between the layer 443 and the housing 421.

[0134] The above is a description of an example of the configuration of the electronic device.

[0135] Note that the authentication method, processing method, operation method, operating method, display method, etc. executed by the electronic device of one embodiment of the present invention can be described, for example, as a program. For example, a program describing the authentication method, processing method, operation method, operating method, display method, etc. executed by the electronic device 420, etc., exemplified above, can be stored in a non-transitory storage medium and read and executed by a computing device, etc., included in the control unit 401 of the electronic device 420. In other words, a program for causing hardware to execute the authentication method, operating method, etc., exemplified above, and a non-transitory storage medium storing the program are one embodiment of the present invention.

[0136] At least a part of the configuration examples exemplified in this embodiment and the corresponding drawings can be combined as appropriate with other configuration examples or drawings.

[0137] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0138] (Embodiment 2) In this embodiment, a display device according to one embodiment of the present invention will be described.

[0139] A pixel portion included in a display device of one embodiment of the present invention includes a light-emitting element and a light-emitting and light-emitting element.

[0140] The light-receiving and light-emitting element can be fabricated by combining an organic EL element, which is a light-emitting element, with an organic photodiode, which is a light-receiving element. For example, the light-receiving and light-emitting element can be fabricated by adding an active layer of an organic photodiode to the layered structure of the organic EL element. Furthermore, the light-receiving and light-emitting element fabricated by combining an organic EL element and an organic photodiode can suppress an increase in the number of film formation steps by simultaneously forming layers that can have a common configuration with the organic EL element.

[0141] For example, one of the pair of electrodes (common electrode) can be a layer common to the light-emitting and receiving elements and the light-emitting element. It is also preferable that at least one of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer be a layer common to the light-emitting and receiving elements and the light-emitting element. Furthermore, the light-emitting and receiving elements and the light-emitting element can have the same configuration, except for the presence or absence of an active layer of the light-receiving element. In other words, the light-emitting and receiving elements can be fabricated simply by adding the active layer of the light-receiving element to the light-emitting element. Having a common layer between the light-emitting and receiving elements and the light-emitting element in this way can reduce the number of film formations and masks, thereby reducing the manufacturing process and manufacturing costs of the display device. Furthermore, a display device having a light-emitting and receiving element can be fabricated using existing display device manufacturing equipment and manufacturing methods.

[0142] Note that the layers of the light-emitting / receiving element may have different functions when the light-emitting / receiving element functions as a light-receiving element and when it functions as a light-emitting element. In this specification, components are named based on their functions when the light-emitting / receiving element functions as a light-emitting element. For example, a hole injection layer functions as a hole injection layer when the light-emitting / receiving element functions as a light-emitting element, and functions as a hole transport layer when the light-emitting / receiving element functions as a light-receiving element. Similarly, an electron injection layer functions as an electron injection layer when the light-emitting / receiving element functions as a light-emitting element, and functions as an electron transport layer when the light-emitting / receiving element functions as a light-receiving element.

[0143] As described above, the display device of this embodiment has a pixel portion including a light-emitting and receiving element and a light-emitting element. Specifically, the pixel portion includes the light-emitting and receiving elements and the light-emitting element arranged in a matrix. Therefore, the pixel portion has one or both of an imaging function and a sensing function in addition to a function of displaying an image.

[0144] The pixel portion can be used as an image sensor, a touch sensor, or the like. That is, by detecting light in the pixel portion, it is possible to capture an image or detect the approach or contact of an object (a finger, a pen, or the like). Furthermore, in the display device of this embodiment, the light-emitting element can be used as a light source for the sensor. Therefore, it is not necessary to provide a light-receiving portion and a light source separately from the display device, and the number of components in the electronic device can be reduced.

[0145] In the display device of this embodiment, when an object reflects the light emitted from the light-emitting element in the pixel portion, the light-receiving and light-emitting element can detect the reflected light, so that imaging, touch (contact or approach) detection, and the like are possible even in dark places.

[0146] The display device of this embodiment mode has a function of displaying an image using a light-emitting element and a light-emitting / light-emitting element. That is, the light-emitting element and the light-emitting / light-emitting element function as display elements.

[0147] The light-emitting element preferably uses an EL element such as an OLED (organic light-emitting diode) or a QLED (quantum-dot light-emitting diode). Examples of light-emitting materials that the EL element has include fluorescent materials (fluorescent materials), phosphorescent materials (phosphorescent materials), inorganic compounds (quantum dot materials, etc.), and materials that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) materials). Alternatively, an LED such as a micro LED (light-emitting diode) can be used as the light-emitting element.

[0148] The display device of this embodiment has a function of detecting light using a light receiving and emitting element, which can detect light having a shorter wavelength than light emitted by the light receiving and emitting element itself.

[0149] When the light emitting / receiving elements are used in an image sensor, the display device of this embodiment can capture an image using the light emitting / receiving elements. For example, the display device of this embodiment can be used as a scanner.

[0150] For example, data such as fingerprints and palm prints can be acquired using an image sensor. That is, a biometric authentication sensor can be built into the display device of the present embodiment. By building a biometric authentication sensor into the display device, the number of components in the electronic device can be reduced compared to when a biometric authentication sensor is provided separately from the display device, and the electronic device can be made smaller and lighter.

[0151] Using an image sensor, data such as a user's facial expression, eye movement, or changes in pupil diameter can be acquired. By analyzing this data, it is possible to obtain information about the user's mind and body. By changing the display and / or audio output content based on this information, it is possible to ensure the user's safe use of devices, for example, for VR (Virtual Reality), AR (Augmented Reality), or MR (Mixed Reality).

[0152] When the light emitting / receiving element is used as a touch sensor, the display device of this embodiment can detect the approach or contact of an object by using the light emitting / receiving element.

[0153] The light emitting / receiving element functions as a photoelectric conversion element that detects light incident on the light emitting / receiving element and generates electric charges. The amount of electric charges generated is determined based on the amount of incident light.

[0154] The light emitting / receiving element can be fabricated by adding an active layer of a light receiving element to the above-described light emitting element configuration.

[0155] The light emitting / receiving element may be, for example, an active layer of a pn-type or pin-type photodiode.

[0156] In particular, it is preferable to use an organic photodiode active layer having a layer containing an organic compound as the light-receiving / light-emitting element. Organic photodiodes can be easily made thin, lightweight, and large in area, and have a high degree of freedom in shape and design, making them applicable to a variety of display devices.

[0157] 17A to 17D are cross-sectional views of display devices according to embodiments of the present invention.

[0158] A display device 350A shown in FIG. 17A includes, between a substrate 351 and a substrate 359, a layer 353 having a light emitting / receiving element and a layer 357 having a light emitting element.

[0159] A display device 350B shown in FIG. 17B includes, between a substrate 351 and a substrate 359, a layer 353 having a light emitting / receiving element, a layer 355 having a transistor, and a layer 357 having a light emitting element.

[0160] The display devices 350A and 350B have a structure in which green (G) light and blue (B) light are emitted from the layer 357 having the light-emitting elements, and red (R) light is emitted from the layer 353 having the light-emitting and light-emitting elements. Note that in the display device of one embodiment of the present invention, the color of light emitted from the layer 353 having the light-emitting and light-emitting elements is not limited to red.

[0161] The light emitting / receiving elements included in the layer 353 having the light emitting / receiving elements can detect light incident from outside the display device 350A or the display device 350B. The light emitting / receiving elements can detect, for example, one or both of green (G) light and blue (B) light.

[0162] A display device according to one embodiment of the present invention has a plurality of pixels arranged in a matrix. Each pixel has one or more subpixels. Each subpixel has one light-emitting / receiving element or one light-emitting element. For example, a pixel may have three subpixels (e.g., three colors of R, G, and B, or three colors of yellow (Y), cyan (C), and magenta (M)) or four subpixels (e.g., four colors of R, G, B, and white (W), or four colors of R, G, B, and Y). At least one subpixel of one color has a light-emitting / receiving element. The light-emitting / receiving element may be provided in all or some of the pixels. Furthermore, one pixel may have multiple light-emitting / receiving elements.

[0163] The layer 355 having transistors includes, for example, a transistor electrically connected to a light-emitting / receiving element and a transistor electrically connected to a light-emitting element. The layer 355 having transistors may further include wirings, electrodes, terminals, capacitors, resistors, and the like.

[0164] The display device of one embodiment of the present invention may have a function to detect an object such as a finger in contact with the display device (FIG. 17C). Alternatively, it may have a function to detect an object approaching (not in contact with) the display device (FIG. 17D). For example, as shown in FIGS. 17C and 17D, light emitted from a light-emitting element in a layer 357 having a light-emitting element is reflected by a finger 352 that has come into contact with or approached the display device 350B, and the reflected light is detected by a light-emitting element in a layer 353 having a light-emitting element. This makes it possible to detect that the finger 352 has come into contact with or approached the display device 350B.

[0165] <Pixels> 17E to 17G and 18A to 18D show examples of pixels. Note that the arrangement of the subpixels is not limited to the order shown in the drawings. For example, the positions of the subpixels 311B and 311G may be reversed.

[0166] 17E is a stripe array. The pixel has a subpixel 311SR that emits red light and has a light-receiving function, a subpixel 311G that emits green light, and a subpixel 311B that emits blue light. In a display device in which a pixel is composed of three subpixels, R, G, and B, a light-emitting element used in the R subpixel can be replaced with a light-receiving / light-emitting element, thereby fabricating a display device in which the pixel has a light-receiving function.

[0167] 17F is a matrix array. The pixel has subpixel 311SR that emits red light and has a light-receiving function, subpixel 311G that emits green light, subpixel 311B that emits blue light, and subpixel 311W that emits white light. Even in a display device in which a pixel is composed of four subpixels, R, G, B, and W, by replacing the light-emitting element used in the R subpixel with a light-receiving / light-emitting element, a display device in which the pixel has a light-receiving function can be manufactured.

[0168] The pixels shown in FIG. 17G are arranged in a Pentile array. In FIG. 17G, each pixel has subpixels that emit two different colors of light. The upper left pixel and lower right pixel shown in FIG. 17G have a subpixel 311SR that emits red light and has a light-receiving function, and a subpixel 311G that emits green light. The lower left pixel and upper right pixel shown in FIG. 17G have a subpixel 311G that emits green light, and a subpixel 311B that emits blue light. The shapes of the subpixels shown in FIG. 17G indicate the top shapes of the light-emitting or light-emitting / receiving elements of the subpixels.

[0169] 18A includes a subpixel 311SR that emits red light and has a light-receiving function, a subpixel 311G that emits green light, and a subpixel 311B that emits blue light. The subpixel 311SR is arranged in a column different from the subpixels 311G and 311B. The subpixels 311G and 311B are arranged alternately in the same column, with one being arranged in an odd-numbered row and the other being arranged in an even-numbered row. Note that the subpixels arranged in a column different from the subpixels of other colors are not limited to red (R) and may be green (G) or blue (B).

[0170] FIG. 18B shows two pixels, each consisting of three subpixels surrounded by dotted lines. The pixel shown in FIG. 18B has a subpixel 311SR that emits red light and has a light-receiving function, a subpixel 311G that emits green light, and a subpixel 311B that emits blue light. In the pixel on the left shown in FIG. 18B, the subpixel 311G is arranged in the same row as the subpixel 311SR, and the subpixel 311B is arranged in the same column as the subpixel 311SR. In the pixel on the right shown in FIG. 18B, the subpixel 311G is arranged in the same row as the subpixel 311SR, and the subpixel 311B is arranged in the same column as the subpixel 311G. In the pixel layout shown in FIG. 18B, the subpixels 311SR, 311G, and 311B are arranged repeatedly in both odd-numbered and even-numbered rows, and in each column, subpixels of different colors are arranged in the odd-numbered and even-numbered rows.

[0171] Figure 18C is a modified example of the pixel array shown in Figure 17G. The upper left pixel and lower right pixel shown in Figure 18C have a sub-pixel 311SR that emits red light and has a light-receiving function, and a sub-pixel 311G that emits green light. The lower left pixel and upper right pixel shown in Figure 18C have a sub-pixel 311SR that emits red light and has a light-receiving function, and a sub-pixel 311B that emits blue light.

[0172] In FIG. 17G, each pixel is provided with a sub-pixel 311G that emits green light. On the other hand, in FIG. 18C, each pixel is provided with a sub-pixel 311SR that emits red light and has a light-receiving function. Because each pixel is provided with a sub-pixel that has a light-receiving function, the configuration shown in FIG. 18C can capture images with higher resolution than the configuration shown in FIG. 17G. This can improve the accuracy of biometric authentication, for example.

[0173] The top surface shapes of the light-emitting element and light-receiving / light-emitting element are not particularly limited and may be circular, elliptical, polygonal, polygonal with rounded corners, etc. Fig. 17G shows an example of a circular top surface shape of the light-emitting element of the subpixel 311G, and Fig. 18C shows an example of a square top surface shape. The top surface shapes of the light-emitting element and light-receiving / light-emitting element for each color may be different from each other, or may be the same for some or all of the colors.

[0174] The aperture ratios of the subpixels of each color may be different from one another, or may be the same for some or all of the colors. For example, the aperture ratio of the subpixel provided in each pixel (subpixel 311G in FIG. 17G, subpixel 311SR in FIG. 18C) may be smaller than the aperture ratios of the subpixels of other colors.

[0175] Fig. 18D is a modified example of the pixel array shown in Fig. 18C. Specifically, the configuration in Fig. 18D is obtained by rotating the configuration in Fig. 18C by 45°. In Fig. 18C, it has been described that one pixel is made up of two sub-pixels, but as shown in Fig. 18D, it can also be understood that one pixel is made up of four sub-pixels.

[0176] In FIG. 18D, a single pixel is described as being composed of four subpixels surrounded by dotted lines. One pixel has two subpixels 311SR, one subpixel 311G, and one subpixel 311B. By having a single pixel thus include multiple subpixels with a light receiving function, it is possible to capture images with high resolution. This can improve the accuracy of biometric authentication. For example, the resolution of the image can be set to the root of twice the resolution of the display.

[0177] A display device to which the configuration shown in Figure 18C or Figure 18D is applied has p (p is an integer of 2 or more) first light-emitting elements, q (q is an integer of 2 or more) second light-emitting elements, and r (r is an integer greater than p and greater than q) light-receiving and light-emitting elements. p and r satisfy r = 2p. Furthermore, p, q, and r satisfy r = p + q. One of the first light-emitting elements and the second light-emitting element emits green light, and the other emits blue light. The light-receiving and light-emitting element emits red light and has a light-receiving function.

[0178] For example, when touch detection is performed using a light-emitting / receiving element, it is preferable that the light emitted from the light source is difficult for the user to see. Because blue light is less visible than green light, it is preferable that a light-emitting element that emits blue light be used as the light source. Therefore, it is preferable that the light-emitting / receiving element has a function of receiving blue light and converting it into an electrical signal.

[0179] As described above, pixels with various arrangements can be applied to the display device of one embodiment of the present invention.

[0180] In the display device of this embodiment, there is no need to change the pixel arrangement in order to incorporate a light-receiving function into the pixel, and therefore, one or both of an imaging function and a sensing function can be added to the pixel portion without reducing the aperture ratio and the resolution.

[0181] <Light-emitting / receiving element> 19A to 19E show examples of the stacked structure of the light emitting and receiving element.

[0182] The light emitting / receiving element has at least an active layer and a light emitting layer between a pair of electrodes.

[0183] The light-emitting / receiving element may further include a layer containing a substance with high hole-injecting property, a substance with high hole-transporting property, a substance with high hole-blocking property, a substance with high electron-transporting property, a substance with high electron-injecting property, a substance with high electron-blocking property, or a bipolar substance (a substance with high electron-transporting property and high hole-transporting property), as a layer other than the active layer and the light-emitting layer.

[0184] The light emitting and receiving elements shown in Figures 19A to 19C each have a first electrode 180, a hole injection layer 181, a hole transport layer 182, an active layer 183, a light emitting layer 193, an electron transport layer 184, an electron injection layer 185, and a second electrode 189.

[0185] 19A to 19C can be considered to have a configuration in which an active layer 183 is added to a light-emitting element. Therefore, by simply adding a step of forming the active layer 183 to the manufacturing process of the light-emitting element, the light-emitting / receiving element can be formed in parallel with the formation of the light-emitting element. Furthermore, the light-emitting element and the light-emitting / receiving element can be formed on the same substrate. Therefore, it is possible to impart one or both of an imaging function and a sensing function to the pixel portion without significantly increasing the number of manufacturing processes.

[0186] The stacking order of the light-emitting layer 193 and the active layer 183 is not limited. Fig. 19A shows an example in which the active layer 183 is provided on the hole transport layer 182, and the light-emitting layer 193 is provided on the active layer 183. Fig. 19B shows an example in which the light-emitting layer 193 is provided on the hole transport layer 182, and the active layer 183 is provided on the light-emitting layer 193. The active layer 183 and the light-emitting layer 193 may be in contact with each other, as shown in Figs. 19A and 19B.

[0187] As shown in Fig. 19C, it is preferable that a buffer layer is sandwiched between the active layer 183 and the light-emitting layer 193. The buffer layer can be at least one layer selected from a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a hole blocking layer, an electron blocking layer, etc. Fig. 19C shows an example in which a hole transport layer 182 is used as the buffer layer.

[0188] By providing a buffer layer between the active layer 183 and the light-emitting layer 193, it is possible to suppress the transfer of excitation energy from the light-emitting layer 193 to the active layer 183. In addition, the buffer layer can also be used to adjust the optical path length (cavity length) of the microresonance (microcavity) structure. Therefore, a light-emitting / receiving element having a buffer layer between the active layer 183 and the light-emitting layer 193 can obtain high light-emitting efficiency.

[0189] 19D differs from the light emitting / receiving element shown in FIGS. 19A and 19C in that it does not have the hole transport layer 182. The light emitting / receiving element may not have at least one layer selected from the hole injection layer 181, the hole transport layer 182, the electron transport layer 184, and the electron injection layer 185. The light emitting / receiving element may also have other functional layers such as a hole blocking layer or an electron blocking layer.

[0190] The light emitting / receiving device shown in FIG. 19E differs from the light emitting / receiving device shown in FIGS. 19A to 19C in that it does not have an active layer 183 or a light emitting layer 193, but has a layer 186 that serves as both a light emitting layer and an active layer.

[0191] The layer 186, which serves as both the light-emitting layer and the active layer, can be a layer containing three materials: an n-type semiconductor that can be used in the active layer 183, a p-type semiconductor that can be used in the active layer 183, and a light-emitting substance that can be used in the light-emitting layer 193.

[0192] It is preferable that the lowest energy absorption band in the absorption spectrum of the mixed material of n-type and p-type semiconductors does not overlap with the maximum peak in the emission spectrum (PL spectrum) of the luminescent substance, and it is more preferable that they are sufficiently separated from each other.

[0193] In the light emitting / receiving element, a conductive film that transmits visible light is used for the electrode on the light extraction side, and a conductive film that reflects visible light is preferably used for the electrode on the non-light extraction side.

[0194] When the light-emitting / receiving element is driven as a light-emitting element, the hole injection layer is a layer that injects holes from the anode into the light-emitting / receiving element. The hole injection layer is a layer containing a material with high hole injection properties. As the material with high hole injection properties, a composite material containing a hole-transporting material and an acceptor material (electron-accepting material), an aromatic amine compound, or the like can be used.

[0195] When the light emitting / receiving element is operated as a light emitting element, the hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light emitting layer. When the light emitting / receiving element is operated as a light receiving element, the hole transport layer is a layer that transports holes generated in the active layer based on incident light to the anode. The hole transport layer is a layer that contains a hole transport material. The hole transport material is a material having a density of 1×10 -6 cm 2 A material having a hole mobility of 1 / Vs or more is preferred. Note that other materials can also be used as long as they have a higher hole transporting property than electron transporting property. The hole transporting material is preferably a material having a high hole transporting property, such as a π-electron-rich heteroaromatic compound (e.g., a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton).

[0196] When the light emitting / receiving element is operated as a light emitting element, the electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light emitting layer. When the light emitting / receiving element is operated as a light receiving element, the electron transport layer is a layer that transports electrons generated in the active layer based on incident light to the cathode. The electron transport layer is a layer that contains an electron transporting material. The electron transporting material is 1×10 -6 cm 2A substance having an electron mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher electron transporting property than holes. Examples of the electron-transporting material include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, and metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds.

[0197] When the light-emitting / receiving element is driven as a light-emitting element, the electron injection layer is a layer that injects electrons from the cathode into the light-emitting / receiving element. The electron injection layer is a layer containing a material with high electron injection properties. The material with high electron injection properties can be an alkali metal, an alkaline earth metal, or a compound thereof. The material with high electron injection properties can also be a composite material containing an electron transport material and a donor material (electron donor material).

[0198] The light-emitting layer 193 is a layer containing a light-emitting substance. The light-emitting layer 193 can contain one or more types of light-emitting substances. As the light-emitting substance, a substance that emits light of a color such as blue, purple, blue-purple, green, yellow-green, yellow, orange, or red is appropriately used. Furthermore, a substance that emits near-infrared light can also be used as the light-emitting substance.

[0199] Examples of light-emitting materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0200] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0201] Examples of phosphorescent materials include organometallic complexes (particularly iridium complexes) having a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton; organometallic complexes (particularly iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand; platinum complexes; and rare earth metal complexes.

[0202] The light-emitting layer 193 may contain one or more organic compounds (host materials, assist materials, etc.) in addition to a light-emitting substance (guest material). The one or more organic compounds may be one or both of a hole-transporting material and an electron-transporting material. Furthermore, the one or more organic compounds may be a bipolar material or a TADF material.

[0203] The light-emitting layer 193 preferably includes, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material that are a combination that easily forms an exciplex. This structure allows efficient emission using Exciplex-Triplet Energy Transfer (ExTET), which is energy transfer from an exciplex to a light-emitting substance (phosphorescent material). By selecting a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest-energy absorption band of the light-emitting substance, the energy transfer becomes smooth, allowing efficient emission. This structure simultaneously enables high efficiency, low-voltage operation, and a long lifetime of the light-emitting element.

[0204] In a combination of materials that form an exciplex, the HOMO level (highest occupied molecular orbital level) of the hole-transporting material is preferably equal to or higher than the HOMO level of the electron-transporting material. The LUMO level (lowest unoccupied molecular orbital level) of the hole-transporting material is preferably equal to or higher than the LUMO level of the electron-transporting material. The LUMO and HOMO levels of the materials can be derived from the electrochemical properties (reduction potential and oxidation potential) of the materials measured by cyclic voltammetry (CV).

[0205] The formation of exciplexes can be confirmed, for example, by comparing the emission spectra of the hole-transporting material, the electron-transporting material, and the mixed film of these materials and observing the phenomenon that the emission spectrum of the mixed film is shifted to longer wavelengths than the emission spectra of each material (or has a new peak at longer wavelengths). Alternatively, it can be confirmed by comparing the transient photoluminescence (PL) of the hole-transporting material, the transient PL of the electron-transporting material, and the mixed film of these materials and observing differences in transient response, such as the transient PL lifetime of the mixed film having a longer-lived component or a larger proportion of delayed components than the transient PL lifetimes of the individual materials. The above-mentioned transient PL can also be interpreted as transient electroluminescence (EL). In other words, the formation of exciplexes can also be confirmed by comparing the transient EL of the hole-transporting material, the transient EL of the electron-transporting material, and the mixed film of these materials and observing differences in transient response.

[0206] The active layer 183 includes a semiconductor. Examples of the semiconductor include an inorganic semiconductor such as silicon and an organic semiconductor including an organic compound. In this embodiment, an example in which an organic semiconductor is used as the semiconductor included in the active layer is shown. By using an organic semiconductor, the light-emitting layer 193 and the active layer 183 can be formed by the same method (for example, vacuum deposition), which is preferable because a common manufacturing device can be used.

[0207] The active layer 183 is made of an n-type semiconductor material such as fullerene (e.g., C 60 , C 70Examples of electron-accepting organic semiconductor materials include fullerene derivatives and other fullerenes. Fullerenes have a soccer ball-like shape, which is energetically stable. Fullerenes have deep (low) HOMO and LUMO levels. Because fullerenes have a deep LUMO level, they have extremely high electron-accepting (acceptor) properties. Normally, when the π-electron conjugation (resonance) spreads on a plane, as in benzene, the electron-donating (donor) properties increase, but fullerenes have a spherical shape, so they have high electron-accepting properties despite the large spread of π-electrons. High electron-accepting properties allow charge separation to occur quickly and efficiently, making them useful as light-receiving elements. C 60 , C 70 Both have a wide absorption band in the visible light region, especially C 70 is C 60 It is preferred because it has a larger π-electron conjugated system and a wide absorption band in the long wavelength region compared to the above.

[0208] Examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0209] Examples of p-type semiconductor materials that the active layer 183 has include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), and quinacridone.

[0210] Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, compounds having an aromatic amine skeleton, etc. Further examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, etc.

[0211] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material, and the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0212] It is preferable to use a spherical fullerene as the electron-accepting organic semiconductor material and a planar organic semiconductor material as the electron-donating organic semiconductor material. Molecules with similar shapes tend to aggregate together, and when molecules of the same type aggregate, the energy levels of their molecular orbitals become close, which can improve carrier transport properties.

[0213] For example, the active layer 183 is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor.

[0214] The layer 186 that functions as both a light-emitting layer and an active layer is preferably formed using the above-mentioned light-emitting material, n-type semiconductor, and p-type semiconductor.

[0215] The hole injection layer 181, the hole transport layer 182, the active layer 183, the light-emitting layer 193, the electron transport layer 184, the electron injection layer 185, and the layer serving as both the light-emitting layer and the active layer 186 can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. Each layer can be formed by a method such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, or a coating method.

[0216] Below, a detailed structure of a light-emitting and light-emitting element included in a display device of one embodiment of the present invention will be described with reference to FIGS.

[0217] The display device of one embodiment of the present invention may be any of a top emission type that emits light in a direction opposite to a substrate on which a light-emitting element is formed, a bottom emission type that emits light toward a substrate on which a light-emitting element is formed, and a dual emission type that emits light to both sides.

[0218] 20 to 22, a top-emission display device will be described as an example.

[0219] <Configuration example 1> The display device shown in Figures 20A and 20B has, on a substrate 151, a light-emitting element 347B that emits blue (B) light, a light-emitting element 347G that emits green (G) light, and a light-receiving light-emitting element 347SR that emits red (R) light and has a light-receiving function, via a layer 355 having a transistor.

[0220] Fig. 20A shows a case where the light emitting / receiving element 347SR functions as a light emitting element. Fig. 20A shows an example where the light emitting element 347B emits blue light, the light emitting element 347G emits green light, and the light emitting / receiving element 347SR emits red light.

[0221] Fig. 20B shows a case where the light emitting / receiving element 347SR functions as a light receiving element. Fig. 20B shows an example in which the light emitting / receiving element 347SR detects blue light emitted by the light emitting element 347B and green light emitted by the light emitting element 347G.

[0222] The light emitting element 347B, the light emitting element 347G, and the light emitting / receiving element 347SR each have a pixel electrode 191 and a common electrode 115. In this embodiment, a case will be described as an example in which the pixel electrode 191 functions as an anode and the common electrode 115 functions as a cathode.

[0223] In this embodiment, similarly to the light-emitting element, the light receiving / emitting element 347SR will be described assuming that the pixel electrode 191 functions as an anode and the common electrode 115 functions as a cathode. In other words, the light receiving / emitting element 347SR can be driven by applying a reverse bias between the pixel electrode 191 and the common electrode 115 to detect light incident on the light receiving / emitting element 347SR, generate electric charges, and extract the charges as a current.

[0224] The common electrode 115 is used in common by the light emitting element 347B, the light emitting element 347G, and the light emitting / receiving element 347SR.

[0225] The materials and thicknesses of the pairs of electrodes of the light-emitting element 347B, the light-emitting element 347G, and the light-emitting / receiving element 347SR can be made the same, which leads to a reduction in manufacturing costs and a simplification of the manufacturing process of the display device.

[0226] The configuration of the display device shown in FIGS. 20A and 20B will be specifically described.

[0227] The light-emitting element 347B has a buffer layer 192B, a light-emitting layer 193B, and a buffer layer 194B in this order over a pixel electrode 191. The light-emitting layer 193B contains a light-emitting material that emits blue light. The light-emitting element 347B has a function of emitting blue light.

[0228] The light-emitting element 347G has a buffer layer 192G, a light-emitting layer 193G, and a buffer layer 194G in this order on a pixel electrode 191. The light-emitting layer 193G contains a light-emitting material that emits green light. The light-emitting element 347G has a function of emitting green light.

[0229] The light emitting / receiving element 347SR has a buffer layer 192R, an active layer 183, a light emitting layer 193R, and a buffer layer 194R, in this order, on the pixel electrode 191. The light emitting layer 193R contains a light emitting material that emits red light. The active layer 183 contains an organic compound that absorbs light of a shorter wavelength than red light (for example, one or both of green light and blue light). Note that the active layer 183 may use an organic compound that absorbs not only visible light but also ultraviolet light. The light emitting / receiving element 347SR has a function of emitting red light. The light emitting / receiving element 347SR has a function of detecting the light emitted by at least one of the light emitting elements 347G and 347B, and preferably has a function of detecting the light emitted by both of them.

[0230] The active layer 183 preferably contains an organic compound that does not easily absorb red light and absorbs light with a shorter wavelength than red light, thereby enabling the light emitting / receiving element 347SR to efficiently emit red light and accurately detect light with a shorter wavelength than red light.

[0231] The pixel electrode 191, the buffer layer 192R, the buffer layer 192G, the buffer layer 192B, the active layer 183, the light-emitting layer 193R, the light-emitting layer 193G, the light-emitting layer 193B, the buffer layer 194R, the buffer layer 194G, the buffer layer 194B, and the common electrode 115 may each have a single-layer structure or a multilayer structure.

[0232] In the display devices shown in FIGS. 20A and 20B, the buffer layer, active layer, and light-emitting layer are layers that are fabricated separately for each device.

[0233] The buffer layers 192R, 192G, and 192B may each have one or both of a hole injection layer and a hole transport layer. Furthermore, the buffer layers 192R, 192G, and 192B may also have an electron blocking layer. The buffer layers 194B, 194G, and 194R may each have one or both of an electron injection layer and an electron transport layer. Furthermore, the buffer layers 194R, 194G, and 194B may also have a hole blocking layer. For the materials and other information of each layer constituting the light-emitting element, please refer to the above-mentioned descriptions of each layer constituting the light-emitting element. In this specification and the like, the buffer layers 192R, 192G, and 192B may be collectively referred to as buffer layer 192. The buffer layers 194R, 194G, and 194B may be collectively referred to as buffer layer 194.

[0234] <Configuration example 2> 21A and 21B, the light-emitting element 347B, the light-emitting element 347G, and the light-emitting / receiving element 347SR may have a common layer between a pair of electrodes, which allows the light-emitting / receiving elements to be incorporated into the display device without significantly increasing the number of manufacturing steps.

[0235] The light emitting element 347B, the light emitting element 347G, and the light emitting / receiving element 347SR shown in FIG. 21A have a common layer 112 and a common layer 114 in addition to the configuration shown in FIGS. 20A and 20B.

[0236] The light-emitting element 347B, light-emitting element 347G, and light-receiving element 347SR shown in Figure 21B differ from the configurations shown in Figures 20A and 20B in that they do not have buffer layers 192R, 192G, 192B and buffer layers 194R, 194G, 194B, but have common layers 112 and 114.

[0237] The common layer 112 may have one or both of a hole injection layer and a hole transport layer, and the common layer 114 may have one or both of an electron injection layer and an electron transport layer.

[0238] Each of the common layer 112 and the common layer 114 may have a single layer structure or a laminated structure.

[0239] <Configuration example 3> The display device shown in FIG. 22A is an example in which the laminated structure shown in FIG. 19C is applied to a light emitting / receiving element 347SR.

[0240] The light emitting / receiving element 347SR has, on a pixel electrode 191, a hole injection layer 181, an active layer 183, a hole transport layer 182R, a light emitting layer 193R, an electron transport layer 184, an electron injection layer 185, and a common electrode 115 in this order.

[0241] The hole injection layer 181, the electron transport layer 184, the electron injection layer 185, and the common electrode 115 are layers common to the light emitting element 347G and the light emitting element 347B.

[0242] The light emitting element 347G has a hole injection layer 181, a hole transport layer 182G, a light emitting layer 193G, an electron transport layer 184, an electron injection layer 185, and a common electrode 115 on a pixel electrode 191 in this order.

[0243] The light emitting element 347B has a hole injection layer 181, a hole transport layer 182B, a light emitting layer 193B, an electron transport layer 184, an electron injection layer 185, and a common electrode 115 on a pixel electrode 191 in this order.

[0244] The light-emitting element included in the display device of this embodiment preferably has a microcavity structure. Therefore, one of a pair of electrodes included in the light-emitting element is preferably an electrode that is transparent and reflective to visible light (semi-transmissive / semi-reflective electrode), and the other is preferably an electrode that is reflective to visible light (reflective electrode). When the light-emitting element has a microcavity structure, light emitted from the light-emitting layer can be resonated between the two electrodes, thereby intensifying the light emitted from the light-emitting element.

[0245] The semi-transmitting / semi-reflective electrode can have a laminated structure of a reflective electrode and an electrode that is transparent to visible light (also called a transparent electrode). In this specification, the reflective electrode, which functions as a part of the semi-transmitting / semi-reflective electrode, is sometimes referred to as a pixel electrode or a common electrode, and the transparent electrode is sometimes referred to as an optical adjustment layer, but it can also be said that the transparent electrode (optical adjustment layer) functions as a pixel electrode or a common electrode.

[0246] The light transmittance of the transparent electrode is 40% or more. For example, it is preferable to use an electrode for the light emitting element that has a transmittance of 40% or more for both visible light (light with a wavelength of 400 nm or more and less than 750 nm) and near-infrared light (light with a wavelength of 750 nm or more and 1300 nm or less). The reflectance of the semi-transmissive / semi-reflective electrode for both visible light and near-infrared light is 10% or more and 95% or less, preferably 30% or more and 80% or less. The reflectance of the reflective electrode for both visible light and near-infrared light is 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes is 1×10 -2 Ωcm or less is preferable.

[0247] The hole transport layers 182B, 182G, and 182R may each function as an optical adjustment layer. Specifically, in the light-emitting element 347B, it is preferable to adjust the film thickness of the hole transport layer 182B so that the optical distance between the pair of electrodes is an optical distance that intensifies blue light. Similarly, in the light-emitting element 347G, it is preferable to adjust the film thickness of the hole transport layer 182G so that the optical distance between the pair of electrodes is an optical distance that intensifies green light. And, in the light-receiving / light-emitting element 347SR, it is preferable to adjust the film thickness of the hole transport layer 182R so that the optical distance between the pair of electrodes is an optical distance that intensifies red light. The layer used as the optical adjustment layer is not limited to the hole transport layer. Note that, when the semi-transmitting / semi-reflective electrode has a stacked structure of a reflective electrode and a transparent electrode, the optical distance between the pair of electrodes refers to the optical distance between the pair of reflective electrodes.

[0248] <Configuration Example 4> The display device shown in FIG. 22B is an example in which the laminated structure shown in FIG. 19D is applied to a light emitting / receiving element 347SR.

[0249] The light emitting / receiving element 347SR has, on a pixel electrode 191, a hole injection layer 181, an active layer 183, a light emitting layer 193R, an electron transport layer 184, an electron injection layer 185, and a common electrode 115 in this order.

[0250] The hole injection layer 181, the electron transport layer 184, the electron injection layer 185, and the common electrode 115 are layers common to the light emitting element 347G and the light emitting element 347B.

[0251] The light emitting element 347G has a hole injection layer 181, a hole transport layer 182G, a light emitting layer 193G, an electron transport layer 184, an electron injection layer 185, and a common electrode 115 on a pixel electrode 191 in this order.

[0252] The light emitting element 347B has a hole injection layer 181, a hole transport layer 182B, a light emitting layer 193B, an electron transport layer 184, an electron injection layer 185, and a common electrode 115 on a pixel electrode 191 in this order.

[0253] The hole transport layer is provided in the light-emitting element 347G and the light-emitting element 347B, but not in the light-receiving / light-emitting element 347SR. In this way, in addition to the active layer and the light-emitting layer, there may be a layer that is provided in only one of the light-emitting element and the light-receiving / light-emitting element.

[0254] Below, a detailed structure of a display device of one embodiment of the present invention will be described with reference to FIGS.

[0255] <Display device 310A> 23A and 23B show cross-sectional views of the display device 310A.

[0256] The display device 310A has a light emitting element 190B, a light emitting element 190G, and a light emitting / receiving element 190SR.

[0257] The light emitting element 190B has a pixel electrode 191, a buffer layer 192B, a light emitting layer 193B, a buffer layer 194B, and a common electrode 115. The light emitting element 190B has a function of emitting blue light 321B.

[0258] The light emitting element 190G has a pixel electrode 191, a buffer layer 192G, a light emitting layer 193G, a buffer layer 194G, and a common electrode 115. The light emitting element 190G has a function of emitting green light 321G.

[0259] The light emitting / receiving element 190SR has a pixel electrode 191, a buffer layer 192R, an active layer 183, a light emitting layer 193R, a buffer layer 194R, and a common electrode 115. The light emitting / receiving element 190SR has a function of emitting red light 321R and a function of detecting light 322.

[0260] 23A shows a case where the light emitting / receiving element 190SR functions as a light emitting element. In FIG. 23A, an example is shown in which the light emitting element 190B emits blue light, the light emitting element 190G emits green light, and the light emitting / receiving element 190SR emits red light.

[0261] Fig. 23B shows a case where the light receiving / emitting element 190SR functions as a light receiving element. Fig. 23B shows an example in which the light receiving / emitting element 190SR detects blue light emitted by the light emitting element 190B and green light emitted by the light emitting element 190G.

[0262] The pixel electrode 191 is located on the insulating layer 214. The ends of the pixel electrode 191 are covered with a partition wall 216. Two adjacent pixel electrodes 191 are electrically insulated from each other (also referred to as being electrically separated) by the partition wall 216.

[0263] An organic insulating film can be suitably used for the partition wall 216. Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins. The partition wall 216 is a layer that transmits visible light. As will be described in detail later, a partition wall that blocks visible light may be provided instead of the partition wall 216.

[0264] The display device 310A has a light emitting / receiving element 190SR, a light emitting element 190G, a light emitting element 190B, a transistor 342, and the like between a pair of substrates (substrate 151 and substrate 152).

[0265] The light receiving / emitting element 190SR has a function of detecting light. Specifically, the light receiving / emitting element 190SR is a photoelectric conversion element that receives light 322 incident from outside the display device 310A and converts it into an electrical signal. The light 322 can also be said to be light emitted by one or both of the light receiving / emitting elements 190G and 190B and reflected by an object. The light 322 may also be incident on the light receiving / emitting element 190SR via a lens.

[0266] The light emitting element 190G and the light emitting element 190B have a function of emitting visible light. Specifically, the light emitting element 190G and the light emitting element 190B are electroluminescent elements that emit light toward the substrate 152 by applying a voltage between the pixel electrode 191 and the common electrode 115 (see light 321G and light 321B).

[0267] The buffer layer 192, the light-emitting layer 193, and the buffer layer 194 can also be called organic layers (layers containing an organic compound) or EL layers. The pixel electrode 191 preferably has a function of reflecting visible light. The common electrode 115 has a function of transmitting visible light.

[0268] The pixel electrode 191 is electrically connected to the source or drain of the transistor 342 through an opening provided in the insulating layer 214. The transistor 342 has a function of controlling the driving of a light-emitting element or a light-emitting and receiving element.

[0269] At least a part of the circuit electrically connected to the light emitting / receiving element 190SR is preferably formed using the same material and in the same process as the circuit electrically connected to the light emitting element 190G and the light emitting element 190B, which allows the display device to be thinner and the manufacturing process to be simplified compared to when the two circuits are formed separately.

[0270] The light emitting / receiving element 190SR, the light emitting element 190G, and the light emitting element 190B are preferably each covered with a protective layer 195. In Fig. 23A and other figures, the protective layer 195 is provided on and in contact with the common electrode 115. Providing the protective layer 195 can prevent impurities from entering the light emitting / receiving element 190SR and the light emitting elements of each color, thereby improving the reliability of the light emitting / receiving element 190SR and the light emitting elements of each color. In addition, the protective layer 195 and the substrate 152 are bonded together by an adhesive layer 142.

[0271] A light-shielding layer BM is provided on the surface of the substrate 152 facing the substrate 151. The light-shielding layer BM has openings at positions overlapping with the light-emitting element 190G and the light-emitting element 190B and at a position overlapping with the light-receiving / light-emitting element 190SR. In this specification and the like, the position overlapping with the light-emitting element 190G or the light-emitting element 190B specifically refers to a position overlapping with the light-emitting region of the light-emitting element 190G or the light-emitting element 190B. Similarly, the position overlapping with the light-receiving / light-emitting element 190SR specifically refers to a position overlapping with the light-emitting region and the light-receiving region of the light-receiving / light-emitting element 190SR.

[0272] As shown in FIG. 23B , the light receiving / emitting element 190SR can detect light emitted by the light emitting element 190G or the light emitting element 190B reflected by an object. However, there are cases where the light emitted by the light emitting element 190G or the light emitting element 190B is reflected within the display device 310A and enters the light receiving / emitting element 190SR without passing through the object. The light-shielding layer BM can suppress the influence of such stray light. For example, if the light-shielding layer BM were not provided, the light 323 emitted by the light emitting element 190G would be reflected by the substrate 152, and reflected light 324 would enter the light receiving / emitting element 190SR. By providing the light-shielding layer BM, it is possible to prevent the reflected light 324 from entering the light receiving / emitting element 190SR. This reduces noise and improves the sensitivity of the sensor using the light receiving / emitting element 190SR.

[0273] The light-shielding layer BM can be made of a material that blocks light emitted from the light-emitting element. The light-shielding layer BM preferably absorbs visible light. For example, a black matrix can be formed as the light-shielding layer BM using a metal material or a resin material containing a pigment (such as carbon black) or a dye. The light-shielding layer BM may have a laminated structure of a red color filter, a green color filter, and a blue color filter.

[0274] <Display device 310B> 24A differs from the display device 310A in that the light emitting element 190G, the light emitting element 190B, and the light emitting / receiving element 190SR do not have the buffer layer 192 and the buffer layer 194, but have the common layer 112 and the common layer 114. In the following description of the display device, description of the same configuration as the display device described above may be omitted.

[0275] The layered structures of the light emitting element 190B, the light emitting element 190G, and the light emitting / receiving element 190SR are not limited to those shown in the display devices 310A and 310B. For example, the layered structures shown in FIGS. 19 to 22 can be applied to each element as appropriate.

[0276] <Display device 310C> Display device 310C in FIG. 24B differs from display device 310B in that it does not have substrate 151 and substrate 152, but has substrate 153, substrate 154, adhesive layer 155, and insulating layer 212.

[0277] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The substrate 154 and the protective layer 195 are bonded together by an adhesive layer 142.

[0278] The display device 310C is fabricated by transferring the insulating layer 212, the transistor 342, the light emitting / receiving element 190SR, the light emitting element 190G, and the light emitting element 190B, which are formed on a fabrication substrate, onto the substrate 153. The substrates 153 and 154 are preferably flexible, which can increase the flexibility of the display device 310C. For example, the substrates 153 and 154 are preferably made of resin.

[0279] Substrates 153 and 154 can each be made of polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. One or both of substrates 153 and 154 may be made of glass having a thickness sufficient to provide flexibility.

[0280] The substrate of the display device of this embodiment may be a film having high optical isotropy, such as a triacetyl cellulose (TAC, also called cellulose triacetate) film, a cycloolefin polymer (COP) film, a cycloolefin copolymer (COC) film, or an acrylic film.

[0281] Below, a more detailed structure of the display device of one embodiment of the present invention will be described with reference to FIGS.

[0282] <Display device 100A> FIG. 25 shows a perspective view of the display device 100A, and FIG. 26 shows a cross-sectional view of the display device 100A.

[0283] The display device 100A has a configuration in which a substrate 152 and a substrate 151 are bonded together. In Fig. 25, the substrate 152 is clearly indicated by a dashed line.

[0284] The display device 100A has a pixel portion 162, a circuit 164, wiring 165, etc. Fig. 25 shows an example in which an IC (integrated circuit) 173 and an FPC 172 are mounted on the display device 100A. Therefore, the configuration shown in Fig. 25 can also be said to be a display module having the display device 100A, an IC, and an FPC.

[0285] The circuit 164 can be, for example, a scanning line driver circuit.

[0286] The wiring 165 has a function of supplying signals and power to the pixel portion 162 and the circuit 164. The signals and power are input to the wiring 165 from the outside via the FPC 172 or input to the wiring 165 from the IC 173.

[0287] 25 shows an example in which an IC 173 is provided on a substrate 151 by a COG (Chip On Glass) method or a COF (Chip on Film) method. The IC 173 may be, for example, an IC having a scanning line driving circuit or a signal line driving circuit. The display device 100A and the display module may be configured without an IC. Alternatively, the IC may be mounted on an FPC by a COF method or the like.

[0288] Figure 26 shows an example of a cross section of the display device 100A shown in Figure 25, with a portion of the area including the FPC 172, a portion of the area including the circuit 164, a portion of the area including the pixel section 162, and a portion of the area including the end portion cut away.

[0289] The display device 100A shown in FIG. 26 includes, between a substrate 151 and a substrate 152, a transistor 201, a transistor 205, a transistor 206, a transistor 207, a light-emitting element 190B, a light-emitting element 190G, a light-emitting element 190SR, and the like.

[0290] The substrate 152 and the insulating layer 214 are bonded via an adhesive layer 142. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light emitting element 190B, the light emitting element 190G, and the light receiving / emitting element 190SR. In FIG. 26, a space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 is filled with an inert gas (nitrogen, argon, etc.), and a hollow sealing structure is applied. The adhesive layer 142 may be provided overlapping the light emitting element 190B, the light emitting element 190G, and the light receiving / emitting element 190SR. Furthermore, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 may be filled with a resin different from the adhesive layer 142.

[0291] The light-emitting element 190B has a layered structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193B, a common layer 114, and a common electrode 115 are layered in this order from the insulating layer 214 side. The pixel electrode 191 is connected to a conductive layer 222b of the transistor 207 through an opening provided in the insulating layer 214. The transistor 207 has a function of controlling driving of the light-emitting element 190B. An end of the pixel electrode 191 is covered with a partition wall 216. The pixel electrode 191 contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light.

[0292] The light-emitting element 190G has a layered structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193G, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 191 is connected to a conductive layer 222b of the transistor 206 through an opening provided in the insulating layer 214. The transistor 206 has a function of controlling driving of the light-emitting element 190G.

[0293] The light emitting / receiving element 190SR has a layered structure in which a pixel electrode 191, a common layer 112, an active layer 183, a light emitting layer 193R, a common layer 114, and a common electrode 115 are layered in this order from the insulating layer 214 side. The pixel electrode 191 is electrically connected to a conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214. The transistor 205 has a function of controlling the driving of the light emitting / receiving element 190SR.

[0294] Light emitted by the light emitting element 190B, the light emitting element 190G, and the light receiving / emitting element 190SR is emitted toward the substrate 152. Furthermore, light is incident on the light receiving / emitting element 190SR via the substrate 152 and the space 143. It is preferable that the substrate 152 be made of a material that is highly transparent to visible light.

[0295] The pixel electrode 191 can be manufactured using the same material and the same process. The common layer 112, the common layer 114, and the common electrode 115 are commonly used for the light-emitting element 190B, the light-emitting element 190G, and the light-receiving / light-emitting element 190SR. The light-receiving / light-emitting element 190SR has a configuration in which an active layer 183 is added to the configuration of a light-emitting element that emits red light. Furthermore, the light-emitting element 190B, the light-emitting element 190G, and the light-receiving / light-emitting element 190SR can all have a common configuration except for the configurations of the active layer 183 and the light-emitting layers 193 of each color. This makes it possible to add a light-receiving function to the pixel section 162 of the display device 100A without significantly increasing the number of manufacturing processes.

[0296] A light-shielding layer BM is provided on the surface of substrate 152 facing substrate 151. The light-shielding layer BM has openings at positions overlapping with light-emitting element 190B, light-emitting element 190G, and light-receiving / light-emitting element 190SR. By providing the light-shielding layer BM, it is possible to control the range in which light is detected by light-receiving / light-emitting element 190SR. Furthermore, by providing the light-shielding layer BM, it is possible to prevent light from being directly incident on light-receiving / light-emitting element 190SR from light-emitting element 190G or light-emitting element 190B without passing through an object. Therefore, a sensor with low noise and high sensitivity can be realized.

[0297] The transistor 201, the transistor 205, the transistor 206, and the transistor 207 are all formed over a substrate 151. These transistors can be manufactured using the same material and through the same process.

[0298] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided over the substrate 151 in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0299] It is preferable that at least one insulating layer covering the transistor is made of a material that is resistant to the diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the display device.

[0300] The insulating layer 211, the insulating layer 213, and the insulating layer 215 are preferably formed using an inorganic insulating film. Examples of the inorganic insulating film that can be used include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. Alternatively, a hafnium oxide film, a hafnium oxynitride film, a hafnium nitride oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like may be used. Two or more of the above insulating films may be stacked. A base film may be provided between the substrate 151 and the transistor. The above inorganic insulating film may also be used for the base film.

[0301] Here, organic insulating films often have lower barrier properties than inorganic insulating films. Therefore, it is preferable that the organic insulating film has an opening near the edge of the display device 100A. This can prevent impurities from entering from the edge of the display device 100A through the organic insulating film. Alternatively, the organic insulating film may be formed so that the edge of the organic insulating film is located inside the edge of the display device 100A, so that the organic insulating film is not exposed at the edge of the display device 100A.

[0302] An organic insulating film is suitable for the insulating layer 214, which functions as a planarizing layer. Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins.

[0303] 26, an opening is formed in the insulating layer 214. This makes it possible to prevent impurities from entering the pixel section 162 from the outside through the insulating layer 214, even when an organic insulating film is used for the insulating layer 214. This makes it possible to improve the reliability of the display device 100A.

[0304] The transistor 201, the transistor 205, the transistor 206, and the transistor 207 each include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0305] The structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0306] The transistors 201, 205, 206, and 207 each have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and supplied with the same signal to drive the transistor. Alternatively, the threshold voltage of the transistor may be controlled by supplying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0307] The crystallinity of a semiconductor material used for a transistor is not particularly limited, and any of an amorphous semiconductor and a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0308] The semiconductor layer of the transistor preferably contains a metal oxide (also referred to as an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may contain silicon. Examples of silicon include amorphous silicon and crystalline silicon (such as low-temperature polysilicon and single-crystal silicon).

[0309] The semiconductor layer preferably contains, for example, indium, M (wherein M is one or more elements selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.

[0310] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) for the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, gallium, zinc, and tin. Alternatively, it is preferable to use an oxide containing indium and zinc.

[0311] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of atomic ratios of metal elements in such In-M-Zn oxides include In:M:Zn=1:1:1 or a composition thereabout, In:M:Zn=1:1:1.2 or a composition thereabout, In:M:Zn=2:1:3 or a composition thereabout, In:M:Zn=3:1:2 or a composition thereabout, In:M:Zn=4:2:3 or a composition thereabout, In:M:Zn=4:2:4.1 or a composition thereabout, In:M:Zn=5:1:3 or a composition thereabout, In:M:Zn=5:1:6 or a composition thereabout, In:M:Zn=5:1:7 or a composition thereabout, In:M:Zn=5:1:8 or a composition thereabout, In:M:Zn=10:1:3 or a composition thereabout, In:M:Zn=6:1:6 or a composition thereabout, and In:M:Zn=5:2:5 or a composition thereabout. The term "nearby composition" includes a range of ±30% of the desired atomic ratio.

[0312] For example, when describing a composition with an atomic ratio of In:Ga:Zn=4:2:3 or thereabout, this includes a case where, when the atomic ratio of In is 4, the atomic ratio of Ga is 1 to 3 and the atomic ratio of Zn is 2 to 4. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn=5:1:6 or thereabout, this includes a case where, when the atomic ratio of In is 5, the atomic ratio of Ga is greater than 0.1 and less than 2 and the atomic ratio of Zn is greater than 5 and less than 7. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn=1:1:1 or thereabout, this includes a case where, when the atomic ratio of In is 1, the atomic ratio of Ga is greater than 0.1 and less than 2 and the atomic ratio of Zn is greater than 0.1 and less than 2.

[0313] Different semiconductor materials may be used for semiconductor layers in which channels of the transistors 201, 205, 206, and 207 are formed. For example, crystalline silicon (such as low-temperature polysilicon or single-crystal silicon) may be used for the semiconductor layer of the transistor 201, and metal oxide may be used for the semiconductor layers of the transistors 205, 206, and 207.

[0314] Transistors containing metal oxide (hereinafter also referred to as OS transistors) have extremely high field-effect mobility compared to transistors using amorphous silicon. Furthermore, OS transistors have significantly small source-drain leakage current (hereinafter also referred to as off-state current) in an off state, and can retain charge accumulated in a capacitor connected in series with the transistor for a long period of time. Use of OS transistors enables a display device with low power consumption. Transistors containing low-temperature polysilicon (LTPS) (hereinafter also referred to as LTPS transistors) have high field-effect mobility and favorable frequency characteristics. Use of LTPS transistors enables a display device with high operating speed. The display device 100A includes transistors whose semiconductor layers are made of different materials, and thus can be a high-performance display device that takes advantage of the advantages of each transistor.

[0315] The transistors included in the circuit 164 may have the same structure as or different from the transistors included in the pixel portion 162. The transistors included in the circuit 164 may all have the same structure or may have two or more types. Similarly, the transistors included in the pixel portion 162 may all have the same structure or may have two or more types.

[0316] A connection section 204 is provided in an area of ​​the substrate 151 where the substrate 152 does not overlap. In the connection section 204, the wiring 165 is electrically connected to the FPC 172 via a conductive layer 166 and a connection layer 242. The conductive layer 166, which is obtained by processing the same conductive film as the pixel electrode 191, is exposed on the upper surface of the connection section 204. This allows the connection section 204 and the FPC 172 to be electrically connected via the connection layer 242.

[0317] Various optical members can be disposed on the outside of the substrate 152. Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light collecting film. In addition, an antistatic film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses scratches caused by use, an impact absorbing layer, etc. may be disposed on the outside of the substrate 152.

[0318] The substrate 151 and the substrate 152 can each be made of glass, quartz, ceramic, sapphire, resin, etc. Using a flexible material for the substrate 151 and the substrate 152 can increase the flexibility of the display device.

[0319] The adhesive layer can be made of various curable adhesives, such as photocurable adhesives (e.g., ultraviolet curable), reactive curable adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. Materials with low moisture permeability, such as epoxy resin, are particularly preferred. Two-component resins may also be used. Adhesive sheets, etc., may also be used.

[0320] The connection layer may be made of an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0321] Materials that can be used for conductive layers such as the gate, source, and drain of a transistor, as well as various wirings and electrodes that constitute a display device include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys containing these metals as main components, etc. Films containing these materials can be used as a single layer or a stacked layer structure.

[0322] Examples of light-transmitting conductive materials include conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metal materials, can be used. Alternatively, nitrides of such metal materials (e.g., titanium nitride) can be used. When using metal materials or alloy materials (or their nitrides), it is preferable to thin them sufficiently to ensure light-transmitting properties. A stacked film of the above materials can also be used as the conductive layer. For example, a stacked film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These can also be used for conductive layers such as various wirings and electrodes constituting a display device, and conductive layers (conductive layers functioning as pixel electrodes, common electrodes, etc.) of light-emitting elements and light-emitting / receiving elements.

[0323] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0324] <Display device 100B> FIG. 27 shows a cross-sectional view of the display device 100B.

[0325] The display device 100B differs from the display device 100A mainly in that it has a protective layer 195. Detailed description of the same configuration as the display device 100A will be omitted.

[0326] By providing a protective layer 195 that covers the light-emitting element 190B, the light-emitting element 190G, and the light-receiving / light-emitting element 190SR, it is possible to prevent impurities such as water from entering the light-emitting element 190B, the light-emitting element 190G, and the light-receiving / light-emitting element 190SR, thereby improving the reliability of the light-emitting element 190B, the light-emitting element 190G, and the light-receiving / light-emitting element 190SR.

[0327] In a region 228 near the edge of the display device 100B, it is preferable that the insulating layer 215 and the protective layer 195 contact each other through the opening in the insulating layer 214. In particular, it is preferable that the inorganic insulating film of the insulating layer 215 and the inorganic insulating film of the protective layer 195 contact each other. This makes it possible to prevent impurities from entering the pixel section 162 from the outside through the organic insulating film. This can therefore improve the reliability of the display device 100B.

[0328] The protective layer 195 may have a single layer or a multilayer structure, and may have, for example, a three-layer structure including an inorganic insulating layer on the common electrode 115, an organic insulating layer on the inorganic insulating layer, and an inorganic insulating layer on the organic insulating layer. In this case, it is preferable that the end of the inorganic insulating layer extends further outward than the end of the organic insulating layer.

[0329] Furthermore, a lens may be provided in the area overlapping with the light emitting / receiving element 190SR, thereby improving the sensitivity and accuracy of the sensor using the light emitting / receiving element 190SR.

[0330] The lens preferably has a refractive index of 1.3 or more and 2.5 or less. The lens can be formed using at least one of an inorganic material and an organic material. For example, a material containing a resin can be used for the lens. Also, a material containing at least one of an oxide and a sulfide can be used for the lens.

[0331] Specifically, resins containing chlorine, bromine, or iodine, resins containing heavy metal atoms, resins containing aromatic rings, resins containing sulfur, etc. can be used for the lenses. Alternatively, materials containing resin and nanoparticles of a material with a higher refractive index than the resin can be used for the lenses. Titanium oxide or zirconium oxide can be used for the nanoparticles.

[0332] Cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, oxides containing indium and tin, or oxides containing indium, gallium, and zinc can be used for the lens. Alternatively, zinc sulfide can be used for the lens.

[0333] In the display device 100B, the protective layer 195 and the substrate 152 are bonded together by an adhesive layer 142. The adhesive layer 142 is provided to overlap the light-emitting element 190B, the light-emitting element 190G, and the light-receiving / light-emitting element 190SR, respectively, and a solid sealing structure is applied to the display device 100B.

[0334] <Display device 100C> FIG. 28A shows a cross-sectional view of the display device 100C.

[0335] The display device 100C differs from the display device 100B in the structure of the transistors.

[0336] The display device 100C includes a transistor 208, a transistor 209, and a transistor 210 over a substrate 153.

[0337] The transistor 208, the transistor 209, and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer including a channel formation region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located between the conductive layer 223 and the channel formation region 231i.

[0338] The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively. One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[0339] The pixel electrode 191 of the light emitting element 190G is electrically connected to one of a pair of low resistance regions 231n of the transistor 208 via the conductive layer 222b.

[0340] The pixel electrode 191 of the light emitting / receiving element 190SR is electrically connected to the other of the pair of low resistance regions 231n of the transistor 209 via the conductive layer 222b.

[0341] 28A shows an example in which the insulating layer 225 covers the top and side surfaces of the semiconductor layer. Meanwhile, in the transistor 202 shown in FIG. 28B, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but does not overlap with the low-resistance region 231n. For example, the structure shown in FIG. 28B can be manufactured by processing the insulating layer 225 using the conductive layer 223 as a mask. In FIG. 28B, the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are each connected to the low-resistance region 231n through openings in the insulating layer 215. Furthermore, an insulating layer 218 may be provided to cover the transistor.

[0342] The display device 100C differs from the display device 100B in that it does not have the substrate 151 and the substrate 152, but has the substrate 153, the substrate 154, the adhesive layer 155, and the insulating layer 212.

[0343] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The substrate 154 and the protective layer 195 are bonded together by an adhesive layer 142.

[0344] The display device 100C is fabricated by transferring the insulating layer 212, the transistor 208, the transistor 209, the transistor 210, the light-emitting element 190SR, the light-emitting element 190G, and the like, which are formed on a fabrication substrate, onto a substrate 153. The substrate 153 and the substrate 154 are preferably flexible, which can increase the flexibility of the display device 100C.

[0345] The insulating layer 212 can be formed using the inorganic insulating film that can be used for the insulating layers 211, 213, and 215.

[0346] <Display device 100D> FIG. 29A shows a cross-sectional view of the display device 100D.

[0347] The display device 100D differs from the display device 100C in the structure of the transistor 210.

[0348] The display device 100D includes a transistor 208, a transistor 209, and a transistor 210A. An enlarged view of the transistor 210A is shown in Figure 29B.

[0349] The semiconductor layer of the transistor 210A is formed on a different plane from the semiconductor layers of the transistors 208 and 209. For example, an LTPS transistor can be used as the transistor 210A, and OS transistors can be used as the transistors 208 and 209.

[0350] The transistor 210A includes a conductive layer 251 that functions as a bottom gate, an insulating layer 217 that functions as a first gate insulating layer, a semiconductor layer having a channel formation region 252i and a pair of low-resistance regions 252n, a conductive layer 254a connected to one of the pair of low-resistance regions 252n, a conductive layer 254b connected to the other of the pair of low-resistance regions 252n, an insulating layer 219 that functions as a second gate insulating layer, a conductive layer 253 that functions as a top gate, and an insulating layer 211 that covers the conductive layer 253.

[0351] The insulating layers 217 and 219 can be formed using the same inorganic insulating films as those used for the insulating layers 211 and 225, respectively.

[0352] The conductive layer 254a and the conductive layer 254b are electrically connected to the low-resistance region 252n through openings provided in the insulating layer 219 and the insulating layer 211. One of the conductive layer 254a and the conductive layer 254b functions as a source, and the other functions as a drain.

[0353] An insulating layer 225 and an insulating layer 215 functioning as protective layers are provided over the transistor 210A. The conductive layer 255a and the conductive layer 255b are electrically connected to the conductive layer 254a and the conductive layer 254b through openings provided in the insulating layer 225 and the insulating layer 215, respectively.

[0354] 29A shows a structure in which the conductive layer 255a is electrically connected to one of the pair of low-resistance regions 252n through the conductive layer 254a and the conductive layer 255b is electrically connected to the other of the pair of low-resistance regions 252n through the conductive layer 254b, but one embodiment of the present invention is not limited to this. A structure in which the conductive layers 254a and 254b are not provided and the conductive layer 255a is in contact with one of the pair of low-resistance regions 252n and the conductive layer 255b is in contact with the other of the pair of low-resistance regions 252n may also be used.

[0355] 29A illustrates a structure in which the conductive layer 253 is provided on the same surface as the bottom gate of the transistor 208 and the bottom gate of the transistor 209. The conductive layer 253 can be formed using the same material as the bottom gate of the transistor 208 and the bottom gate of the transistor 209. The conductive layer 253 is preferably formed by processing the same conductive film as the bottom gate of the transistor 208 and the bottom gate of the transistor 209. By processing and forming the conductive layer 253 using the same conductive film, the process can be simplified.

[0356] 29A illustrates a structure in which the conductive layers 255a and 255b are provided on the same plane as the source and drain of the transistor 208 and the source and drain of the transistor 209. The conductive layers 255a and 255b can be formed using the same materials as the source and drain of the transistor 208 and the source and drain of the transistor 209. The conductive layers 255a and 255b are preferably formed by processing the same conductive film as the source and drain of the transistor 208 and the source and drain of the transistor 209. By processing and forming the conductive layers from the same conductive film, the process can be simplified.

[0357] As described above, in the display device of this embodiment, a sub-pixel that exhibits one of the colors is provided with a light-receiving / light-emitting element instead of a light-emitting element. The light-receiving / light-emitting element functions as both a light-emitting element and a light-receiving element, so that the pixel can be given a light-receiving function without increasing the number of sub-pixels included in the pixel. Furthermore, the pixel can be given a light-receiving function without reducing the resolution of the display device or the aperture ratio of each sub-pixel.

[0358] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0359] (Embodiment 3) In this embodiment, a metal oxide (also referred to as an oxide semiconductor) that can be used for the OS transistor described in the above embodiment will be described.

[0360] The metal oxide preferably contains at least indium or zinc. It is particularly preferable that it contains indium and zinc. It is also preferable that it contains aluminum, gallium, yttrium, tin, or the like in addition to these. It may also contain one or more elements selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, and the like.

[0361] The metal oxide can be formed by a sputtering method, a chemical vapor deposition (CVD) method such as a metal organic chemical vapor deposition (MOCVD) method, an atomic layer deposition (ALD) method, or the like.

[0362] <Classification of crystal structures> Examples of the crystalline structure of oxide semiconductors include amorphous (including completely amorphous), c-axis-aligned crystalline (CAAC), nanocrystalline (nc), cloud-aligned composite (CAC), single crystal, and polycrystal.

[0363] The crystalline structure of a film or substrate can be evaluated using X-ray diffraction (XRD) spectra. For example, it can be evaluated using XRD spectra obtained by GIXD (Grazing-Incidence XRD) measurements. The GIXD method is also called the thin film method or the Seemann-Bohlin method.

[0364] For example, for a quartz glass substrate, the peak shape of the XRD spectrum is nearly symmetrical. On the other hand, for an IGZO film with a crystalline structure, the peak shape of the XRD spectrum is asymmetrical. The asymmetrical peak shape of the XRD spectrum clearly indicates the presence of crystals in the film or substrate. In other words, if the peak shape of the XRD spectrum is not symmetrical, the film or substrate cannot be said to be in an amorphous state.

[0365] The crystalline structure of a film or substrate can be evaluated by the diffraction pattern (also called the nanobeam electron diffraction pattern) observed using nanobeam electron diffraction (NBED). For example, a halo is observed in the diffraction pattern of a quartz glass substrate, confirming that the quartz glass is in an amorphous state. Furthermore, a spot-like pattern is observed in the diffraction pattern of an IGZO film deposited at room temperature, rather than a halo. For this reason, it is estimated that an IGZO film deposited at room temperature is in an intermediate state that is neither crystalline nor amorphous, and therefore it cannot be concluded that it is in an amorphous state.

[0366] <Oxide semiconductor structure> Note that oxide semiconductors may be classified differently depending on their structures. For example, oxide semiconductors are divided into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the above-mentioned CAAC-OS and nc-OS. Non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors, amorphous-like oxide semiconductors (a-like OSs), amorphous oxide semiconductors, and the like.

[0367] Here, the above-mentioned CAAC-OS, nc-OS, and a-like OS will be described in detail.

[0368] [CAAC-OS] CAAC-OS is an oxide semiconductor having multiple crystalline regions, each with its c-axis aligned in a specific direction. The specific direction can be the thickness direction of the CAAC-OS film, the normal direction to the surface on which the CAAC-OS film is formed, or the normal direction to the surface of the CAAC-OS film. A crystalline region is a region with periodic atomic arrangement. If the atomic arrangement is considered as a lattice arrangement, a crystalline region can also be a region with a uniform lattice arrangement. Furthermore, CAAC-OS has a region where multiple crystalline regions are connected in the ab-plane direction, and the region may have distortion. Note that distortion refers to a location where the lattice arrangement changes between a region with a uniform lattice arrangement and a region with a different uniform lattice arrangement in the region where multiple crystalline regions are connected. In other words, CAAC-OS is an oxide semiconductor with a c-axis aligned but no clear orientation in the ab-plane direction.

[0369] Each of the multiple crystalline regions is composed of one or more minute crystals (crystals with a maximum diameter of less than 10 nm). When a crystalline region is composed of one minute crystal, the maximum diameter of the crystalline region is less than 10 nm. When a crystalline region is composed of many minute crystals, the size of the crystalline region may be several tens of nm.

[0370] In an In-M-Zn oxide (wherein element M is one or more elements selected from aluminum, gallium, yttrium, tin, titanium, etc.), the CAAC-OS tends to have a layered crystal structure (also referred to as a layered structure) in which a layer containing indium (In) and oxygen (hereinafter referred to as an In layer) and a layer containing element M, zinc (Zn), and oxygen (hereinafter referred to as an (M, Zn) layer) are stacked. Note that indium and element M are mutually substituted. Therefore, the (M, Zn) layer may contain indium. Furthermore, the In layer may contain element M. Furthermore, the In layer may contain Zn. The layered structure is observed as a lattice image in, for example, a high-resolution transmission electron microscope (TEM) image.

[0371] When the CAAC-OS film is subjected to structural analysis using, for example, an XRD apparatus, a peak indicating c-axis orientation is detected at or near 2θ=31° in out-of-plane XRD measurement using θ / 2θ scan. Note that the position of the peak indicating c-axis orientation (2θ value) may vary depending on the type and composition of the metallic elements constituting the CAAC-OS.

[0372] For example, in the electron diffraction pattern of a CAAC-OS film, multiple bright spots are observed, and the spots are observed at positions that are point-symmetric with respect to the spot of the incident electron beam that has passed through the sample (also called the direct spot).

[0373] When the crystalline region is observed from the specific direction, the lattice arrangement within the crystalline region is basically a hexagonal lattice, but the unit cell is not necessarily a regular hexagon and may be non-regular hexagonal. Furthermore, the distortion may have a pentagonal, heptagonal, or other lattice arrangement. In the CAAC-OS, no clear grain boundaries are observed even near the distortion. This indicates that the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This is thought to be because the CAAC-OS can tolerate distortion due to the lack of close-packed oxygen atom arrangement in the ab-plane direction or the change in interatomic bond distance caused by metal atom substitution.

[0374] A crystal structure with clear grain boundaries is called polycrystalline. Grain boundaries act as recombination centers, trapping carriers and potentially causing a decrease in the on-state current and field-effect mobility of a transistor. Therefore, CAAC-OS, which lacks clear grain boundaries, is one of the crystalline oxides with a crystal structure suitable for use in the semiconductor layer of a transistor. Zn is preferred for use in CAAC-OS. For example, In-Zn oxide and In-Ga-Zn oxide are suitable because they can suppress the generation of grain boundaries more effectively than In oxide.

[0375] CAAC-OS is an oxide semiconductor with high crystallinity and no clear crystal grain boundaries. Therefore, it can be said that the CAAC-OS is less susceptible to a decrease in electron mobility due to crystal grain boundaries. Furthermore, since the crystallinity of an oxide semiconductor can be reduced by the inclusion of impurities or the generation of defects, the CAAC-OS can also be said to be an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Therefore, oxide semiconductors with CAAC-OS have stable physical properties. Therefore, oxide semiconductors with CAAC-OS are heat-resistant and highly reliable. Furthermore, the CAAC-OS is stable even under high temperatures (so-called thermal budget) during the manufacturing process. Therefore, using a CAAC-OS for an OS transistor can increase the flexibility of the manufacturing process.

[0376] [nc-OS] The nc-OS has periodic atomic arrangement in a microscopic region (e.g., a region of 1 nm to 10 nm, particularly a region of 1 nm to 3 nm). In other words, the nc-OS has microcrystalline structures. The size of the microcrystalline structures is, for example, 1 nm to 10 nm, particularly 1 nm to 3 nm, and therefore these microcrystalline structures are also called nanocrystalline structures. Furthermore, the nc-OS exhibits no regularity in the crystal orientation between different nanocrystalline structures. Therefore, the entire film lacks orientation. Therefore, depending on the analytical method, the nc-OS may be indistinguishable from an a-like OS or an amorphous oxide semiconductor. For example, when a structural analysis of an nc-OS film is performed using an XRD apparatus, no peaks indicating crystallinity are detected in out-of-plane XRD measurements using θ / 2θ scanning. Furthermore, when an nc-OS film is subjected to electron diffraction (also known as selected-area electron diffraction) using an electron beam with a probe diameter larger than that of nanocrystalline structures (e.g., 50 nm or larger), a halo-like diffraction pattern is observed. On the other hand, when electron diffraction (also called nanobeam electron diffraction) is performed on an nc-OS film using an electron beam with a probe diameter close to or smaller than the size of the nanocrystals (for example, 1 nm to 30 nm), an electron diffraction pattern can be obtained in which multiple spots are observed within a ring-shaped region centered on the direct spot.

[0377] [a-like OS] The a-like OS is an oxide semiconductor having a structure between the nc-OS and the amorphous oxide semiconductor. The a-like OS has a pore or low-density region. That is, the a-like OS has lower crystallinity than the nc-OS and CAAC-OS. Furthermore, the a-like OS has a higher hydrogen concentration in the film than the nc-OS and CAAC-OS.

[0378] <Oxide semiconductor structure> Next, the above-mentioned CAC-OS will be described in detail, which relates to the material composition.

[0379] [CAC-OS] CAC-OS is a material structure in which elements constituting a metal oxide are unevenly distributed in a size range of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or a similar size range. Hereinafter, a metal oxide in which one or more metal elements are unevenly distributed and the regions containing the metal elements are mixed in a size range of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or a similar size range, is also referred to as a mosaic or patch state.

[0380] Furthermore, CAC-OS has a mosaic structure in which the material is separated into first and second regions, and the first regions are distributed throughout the film (hereinafter also referred to as a cloud structure). That is, CAC-OS is a composite metal oxide having a structure in which the first and second regions are mixed.

[0381] Here, the atomic ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in the In-Ga-Zn oxide are denoted as [In], [Ga], and [Zn], respectively. For example, in the CAC-OS in the In-Ga-Zn oxide, the first region is a region where [In] is larger than [In] in the composition of the CAC-OS film. The second region is a region where [Ga] is larger than [Ga] in the composition of the CAC-OS film. Alternatively, for example, the first region is a region where [In] is larger than [In] in the second region and [Ga] is smaller than [Ga] in the second region. The second region is a region where [Ga] is larger than [Ga] in the first region and [In] is smaller than [In] in the first region.

[0382] Specifically, the first region is a region whose main component is indium oxide, indium zinc oxide, or the like. The second region is a region whose main component is gallium oxide, gallium zinc oxide, or the like. In other words, the first region can be rephrased as a region whose main component is In. The second region can be rephrased as a region whose main component is Ga.

[0383] It should be noted that there are cases where a clear boundary between the first region and the second region cannot be observed.

[0384] CAC-OS in In-Ga-Zn oxide refers to a material structure containing In, Ga, Zn, and O, with some regions primarily composed of Ga and other regions primarily composed of In randomly arranged mosaics. Therefore, it is presumed that CAC-OS has a structure in which metal elements are distributed nonuniformly.

[0385] The CAC-OS can be formed, for example, by a sputtering method under conditions where the substrate is not intentionally heated. When the CAC-OS is formed by a sputtering method, any one or more of an inert gas (typically argon), oxygen gas, and nitrogen gas may be used as the deposition gas. The lower the flow rate ratio of oxygen gas to the total flow rate of deposition gas during deposition, the better. For example, the flow rate ratio of oxygen gas to the total flow rate of deposition gas during deposition is preferably 0% or more and less than 30%, and more preferably 0% or more and 10% or less.

[0386] For example, in the case of CAC-OS in In-Ga-Zn oxide, EDX mapping obtained using EDX (Energy Dispersive X-ray spectroscopy) confirms that the CAC-OS has a structure in which a region mainly composed of In (first region) and a region mainly composed of Ga (second region) are unevenly distributed and mixed.

[0387] Here, the first region has higher conductivity than the second region. That is, the flow of carriers through the first region causes the metal oxide to exhibit conductivity. Therefore, the first region is distributed in a cloud-like manner in the metal oxide, thereby achieving a high field-effect mobility (μ).

[0388] On the other hand, the second region has higher insulating properties than the first region. That is, the second region is distributed in the metal oxide, thereby suppressing leakage current.

[0389] Therefore, when CAC-OS is used in a transistor, the conductivity due to the first region and the insulating property due to the second region act complementarily, thereby providing the CAC-OS with a switching function (the ability to turn on / off). In other words, CAC-OS has a conductive function in part of the material and an insulating function in part of the material, and the material as a whole functions as a semiconductor. By separating the conductive function from the insulating function, both functions can be maximized. Therefore, by using CAC-OS in a transistor, a high on-current (I on ), high field-effect mobility (μ), and good switching behavior can be achieved.

[0390] Transistors using CAC-OS have high reliability and are therefore ideal for various semiconductor devices such as display devices.

[0391] Oxide semiconductors have a variety of structures, each with different characteristics. The oxide semiconductor of one embodiment of the present invention may include two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-like OS, a CAC-OS, an nc-OS, and a CAAC-OS.

[0392] <Transistors containing oxide semiconductors> Next, a case where the oxide semiconductor is used in a transistor will be described.

[0393] By using the oxide semiconductor for a transistor, a transistor with high field-effect mobility and high reliability can be realized.

[0394] For the transistor, an oxide semiconductor having a low carrier concentration is preferably used. For example, the carrier concentration of the oxide semiconductor is 1×10 17 cm -3 Less than 1 × 10 15 cm -3 or less, more preferably 1 × 10 13 cm -3Less than or equal to 1×10 11 cm -3 or less, more preferably 1 × 10 10 cm -3 Less than 1 x 10 -9 cm -3 That is all. Note that in order to reduce the carrier concentration of an oxide semiconductor film, the impurity concentration in the oxide semiconductor film may be reduced to reduce the density of defect states. In this specification and the like, a semiconductor having a low impurity concentration and a low density of defect states is referred to as a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor. Note that an oxide semiconductor having a low carrier concentration may also be referred to as a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor.

[0395] A highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has a low density of defect states, and therefore, the density of trap states may also be low.

[0396] Charges trapped in the trap states of an oxide semiconductor take a long time to dissipate and may behave like fixed charges. Therefore, a transistor in which a channel formation region is formed in an oxide semiconductor with a high density of trap states may have unstable electrical characteristics.

[0397] Therefore, in order to stabilize the electrical characteristics of a transistor, it is effective to reduce the impurity concentration in the oxide semiconductor. Furthermore, in order to reduce the impurity concentration in the oxide semiconductor, it is preferable to also reduce the impurity concentration in the adjacent film. Impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, silicon, and the like.

[0398] <Impurities> Here, the influence of each impurity in an oxide semiconductor will be described.

[0399] When an oxide semiconductor contains silicon or carbon, which is one of the Group 14 elements, defect levels are formed in the oxide semiconductor. Therefore, the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon near the interface with the oxide semiconductor (concentration obtained by secondary ion mass spectrometry (SIMS)) are calculated as follows: 18 atoms / cm 3 Less than or equal to 2 x 10 17 atoms / cm 3 The following applies.

[0400] When an oxide semiconductor contains an alkali metal or alkaline earth metal, defect levels may be formed and carriers may be generated. Therefore, a transistor using an oxide semiconductor containing an alkali metal or alkaline earth metal is likely to have normally-on characteristics. Therefore, when the concentration of the alkali metal or alkaline earth metal in the oxide semiconductor obtained by SIMS is 1×10 18 atoms / cm 3 Less than or equal to 2 x 10 16 atoms / cm 3 Do the following:

[0401] When nitrogen is contained in an oxide semiconductor, electrons serving as carriers are generated, the carrier concentration increases, and the semiconductor is likely to become n-type. As a result, a transistor using an oxide semiconductor containing nitrogen as a semiconductor tends to have normally-on characteristics. Alternatively, when nitrogen is contained in an oxide semiconductor, trap states may be formed. As a result, the electrical characteristics of the transistor may become unstable. For this reason, the nitrogen concentration in the oxide semiconductor obtained by SIMS is set to 5×10 19 atoms / cm 3 Less than 5 x 10 18 atoms / cm 3 Less than or equal to 1×10 18 atoms / cm 3 Less than 5 × 10, more preferably 17 atoms / cm 3 Do the following:

[0402] Hydrogen contained in an oxide semiconductor reacts with oxygen bonded to a metal atom to form water, which may form an oxygen vacancy. When hydrogen enters the oxygen vacancy, electrons serving as carriers may be generated. Furthermore, some of the hydrogen may bond with oxygen bonded to a metal atom to generate electrons serving as carriers. Therefore, a transistor using an oxide semiconductor containing hydrogen is likely to have normally-on characteristics. For this reason, it is preferable to reduce the amount of hydrogen in the oxide semiconductor as much as possible. Specifically, when the hydrogen concentration in an oxide semiconductor obtained by SIMS is 1×10 20 atoms / cm 3 Less than 1 x 10 19 atoms / cm 3 less than 5 × 10 18 atoms / cm 3 less than 1×10 18 atoms / cm 3 Make it less than.

[0403] When an oxide semiconductor with sufficiently reduced impurities is used for a channel formation region of a transistor, stable electrical characteristics can be obtained.

[0404] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0405] (Fourth embodiment) In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS.

[0406] The electronic device of this embodiment includes the display device of one embodiment of the present invention. For example, the display device of one embodiment of the present invention can be applied to a pixel portion of the electronic device. The display device of one embodiment of the present invention has a function of detecting light, and therefore, can perform biometric authentication in the pixel portion, detect a touch operation (contact or approach), and the like. This can improve the functionality, convenience, and the like of the electronic device.

[0407] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0408] The electronic device of this embodiment may have a sensor (including a function to measure force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0409] The electronic device of the present embodiment can have various functions, such as a function of displaying various information (still images, moving images, text images, etc.) on a pixel portion, a touch panel function, a function of displaying a calendar, date, time, etc., a function of executing various software (programs), a wireless communication function, a function of reading out programs or data recorded on a recording medium, etc.

[0410] Electronic device 6500 shown in FIG. 30A is a portable information terminal that can be used as a smartphone.

[0411] The electronic device 6500 includes a housing 6501, a pixel portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The pixel portion 6502 has a touch panel function.

[0412] The display device of one embodiment of the present invention can be applied to the pixel portion 6502.

[0413] FIG. 30B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0414] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, optical members 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0415] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by adhesive layers (not shown).

[0416] In a region outside the pixel portion 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0417] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while keeping the thickness of the electronic device small. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0418] When the display device of one embodiment of the present invention is used for the display panel 6511, an image can be captured in the pixel portion 6502. For example, a fingerprint can be captured on the display panel 6511 and fingerprint authentication can be performed.

[0419] The pixel portion 6502 further includes a touch sensor panel 6513, which allows the pixel portion 6502 to have a touch panel function. The touch sensor panel 6513 can use various types such as a capacitive type, a resistive type, a surface acoustic wave type, an infrared type, an optical type, or a pressure-sensitive type. Alternatively, the display panel 6511 may function as a touch sensor, in which case the touch sensor panel 6513 is not necessarily provided.

[0420] 31A shows an example of a television device. In a television device 7100, a pixel portion 7000 is incorporated into a housing 7101. Here, the housing 7101 is supported by a stand 7103.

[0421] The display device of one embodiment of the present invention can be applied to the pixel portion 7000.

[0422] 31A can be operated using an operation switch provided on the housing 7101 or a separate remote control 7111. Alternatively, the pixel portion 7000 may be provided with a touch sensor, and the television 7100 may be operated by touching the pixel portion 7000 with a finger or the like. The remote control 7111 may have a pixel portion that displays information output from the remote control 7111. The channel and volume can be controlled using the operation keys or touch panel provided on the remote control 7111, and the image displayed on the pixel portion 7000 can be controlled.

[0423] The television device 7100 is configured to include a receiver, a modem, and the like. The receiver can receive general television broadcasts. In addition, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0424] 31B shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like. A pixel portion 7000 is incorporated in the housing 7211.

[0425] The display device of one embodiment of the present invention can be applied to the pixel portion 7000.

[0426] 31C and 31D show an example of digital signage.

[0427] 31C includes a housing 7301, a pixel portion 7000, and a speaker 7303. It may also include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0428] 31D shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a pixel unit 7000 provided along the curved surface of the pillar 7401.

[0429] 31C and 31D, the display device of one embodiment of the present invention can be applied to the pixel portion 7000.

[0430] The larger the pixel area 7000, the more information can be provided at one time. Also, the larger the pixel area 7000, the more easily it will attract people's attention, which can increase the advertising effectiveness, for example.

[0431] Applying a touch panel to the pixel portion 7000 is preferable because it not only displays an image or video on the pixel portion 7000 but also allows a user to intuitively operate it. Furthermore, when used to provide information such as route information or traffic information, the intuitive operation can improve usability.

[0432] 31C and 31D, the digital signage 7300 or the digital signage 7400 is preferably capable of wirelessly linking with an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user. For example, advertising information displayed on the pixel portion 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. Furthermore, by operating the information terminal 7311 or the information terminal 7411, the display of the pixel portion 7000 can be switched.

[0433] It is also possible to run a game on the digital signage 7300 or the digital signage 7400 using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller), thereby allowing an unspecified number of users to simultaneously participate in and enjoy the game.

[0434] The electronic device shown in Figures 32A to 32F has a housing 9000, a pixel unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including the function of measuring force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 9008, etc.

[0435] 32A to 32F have various functions. For example, they may have a function of displaying various information (still images, videos, text images, etc.) on a pixel unit, a touch panel function, a function of displaying a calendar, date, or time, a function of controlling processing using various software (programs), a wireless communication function, a function of reading and processing programs or data recorded on a recording medium, etc. Note that the functions of the electronic device are not limited to these, and the electronic device may have various other functions. The electronic device may have multiple pixel units. Furthermore, the electronic device may have a function of providing a camera or the like to capture still images or videos and store them on a recording medium (external or built-in to the camera), a function of displaying the captured images on the pixel unit, etc.

[0436] The electronic device shown in FIGS. 32A to 32F will be described in detail below.

[0437] FIG. 32A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 can be used as, for example, a smartphone. The mobile information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like. The mobile information terminal 9101 can display text or image information on multiple surfaces. FIG. 32A shows an example in which three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on another surface of the pixel portion 9001. Examples of the information 9051 include notification of an incoming email, SNS, or phone call, the title of the email, the title of the SNS, the sender's name, the date and time, the remaining battery level, and the strength of antenna reception. Alternatively, an icon 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0438] 32B is a perspective view showing a mobile information terminal 9102. The mobile information terminal 9102 has a function of displaying information on three or more surfaces of the pixel portion 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, while the user holds the mobile information terminal 9102 in a breast pocket of their clothes, the user can check information 9053 displayed in a position that can be observed from above the mobile information terminal 9102. The user can check the display without taking the mobile information terminal 9102 out of their pocket and decide, for example, whether to answer a call.

[0439] 32C is a perspective view showing a wristwatch-type mobile information terminal 9200. The pixel portion 9001 has a curved display surface, and display can be performed along the curved display surface. The mobile information terminal 9200 can also perform hands-free conversation by communicating with, for example, a headset capable of wireless communication. The mobile information terminal 9200 can also perform data transmission and reception with another information terminal or charge the mobile information terminal 9200 via a connection terminal 9006. Note that charging may be performed by wireless power supply.

[0440] 32D to 32F are perspective views showing a foldable mobile information terminal 9201. FIG. 32D shows the mobile information terminal 9201 in an unfolded state, FIG. 32F shows it in a folded state, and FIG. 32E is a perspective view showing a state in the process of changing from one of FIG. 32D and FIG. 32F to the other. The mobile information terminal 9201 is highly portable when folded, and has a seamless, wide display area when unfolded, providing excellent viewability of the display. A pixel portion 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the pixel portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0441] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification. [Explanation of symbols]

[0442] BM: light-shielding layer, 100A: display device, 100B: display device, 100C: display device, 100D: display device, 112: common layer, 114: common layer, 115: common electrode, 142: adhesive layer, 143: space, 151: substrate, 152: substrate, 153: substrate, 154: substrate, 155: adhesive layer, 162: pixel section, 164: circuit, 165: wiring, 166: conductive layer, 172: FPC, 173: IC, 180: first electrode, 181: hole injection layer, 182: hole transport layer, 182B: hole transport layer, 182G: hole transport layer, 182R: hole transport layer, 183: active layer, 184: electron transport layer , 185: electron injection layer, 186: layer, 189: second electrode, 190B: light-emitting element, 190G: light-emitting element, 190SR: light-emitting element, 191: pixel electrode, 192: buffer layer, 192B: buffer layer, 192G: buffer layer, 192R: buffer layer, 193: light-emitting layer, 193B: light-emitting layer, 193G: light-emitting layer, 193R: light-emitting layer, 194: buffer layer, 194B: buffer layer, 194G: buffer layer, 194R: buffer layer, 195: protective layer, 201: transistor, 202: transistor, 204: connection portion, 205: transistor, 206: transistor, 207: transistor, 208: transistor, 209: transistor, 210: transistor, 210A: transistor, 211: insulating layer, 212: insulating layer, 213: insulating layer, 214: insulating layer, 215: insulating layer, 216: partition, 217: insulating layer, 218: insulating layer, 219: insulating layer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 225: insulating layer, 228: region, 231: semiconductor layer, 231i: channel formation region, 231n: low resistance region, 242: connection layer, 310A: display device, 310B: display device, 310C: display device, 311B: subpixel, 311G: subpixel, 311SR: subpixel, 311W: subpixel, 321B: light, 321G: light, 321R: light, 322: light, 323: light, 324: reflected light, 342: transistor, 347B: light-emitting element, 347G: light-emitting element, 347SR: light-receiving element, 350A: display device, 350B: display device, 351: substrate, 352: finger, 353: layer, 355: layer, 357: layer, 359: substrate, 400: display device, 400A: display device, 401: control unit, 402: pixel unit, 403: sensor unit, 404: memory unit, 405: display element, 406: light-receiving element,407: authentication unit, 408: touch sensor, 420: electronic device, 420A: electronic device, 421: housing, 422: pixel unit, 425: first region, 426: image, 427: second region, 428: image, 429: display, 430: finger, 441: layer, 443: layer, 445: space, 451: first authentication information, 453: second authentication information, 6500: electronic device, 6501: housing, 6502: pixel unit, 6503: Power button, 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 6510: Protective member, 6511: Display panel, 6512: Optical member, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 7000: Pixel unit, 7100: Television device, 7101: Housing Body, 7103: Stand, 7111: Remote control device, 7200: Notebook personal computer, 7211: Housing, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Housing, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal device, 9000: housing, 9001: pixel unit, 9003: speaker, 9005: operation keys, 9006: connection terminal, 9007: sensor, 9008: microphone, 9050: icon, 9051: information, 9052: information, 9053: information, 9054: information, 9055: hinge, 9101: mobile information terminal, 9102: mobile information terminal, 9200: mobile information terminal, 9201: mobile information terminal,

Claims

[Claim 1] The device has a pixel unit, a sensor unit, and an authentication unit, the pixel unit includes a display element and a light receiving element, the pixel portion has a first region, the pixel portion has a function of lighting the display element in the first region, the pixel unit has a function of capturing an image of an object that touches the first area using the light receiving element and acquiring first authentication information; the sensor unit has a second region, the sensor unit has a function of capturing an image of an object that touches the second area and acquiring second authentication information; the authentication unit has a function of performing a first authentication process using the first authentication information, The authentication unit is an electronic device having a function of performing a second authentication process using the second authentication information.

Images