Electronic apparatus

Abstract

To provide an electronic apparatus that has a non-contact input function.SOLUTION: An electronic apparatus includes a display device and an input device, and enables a user to give an input operation even in a non-contact manner. The display device has, at a display unit, a light emitting device and a light receiving device. The input device has a light source. The light receiving device has a function of detecting light emitted by the light source of the input device. As for the light emitted by the light source of the input device, infrared light that has substantially no visibility is applied. Hence, even if such light is emitted to the display unit at a high luminance, it does not affect the visibility of the display. Such a structure enables the user to give an input operation to the display device in a non-contact manner.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One aspect of the present invention relates to an electronic device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the technical field of one embodiment of the present invention include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, a lighting device, an input device (for example, a touch sensor), an input / output device (for example, a touch panel), a driving method thereof, or a manufacturing method thereof.

[0003] Note that in this specification and the like, a semiconductor device refers to any device that can function by utilizing semiconductor characteristics. A transistor and a semiconductor circuit are examples of a semiconductor device. In addition, a memory device, a display device, an imaging device, and an electronic device may include a semiconductor device. [Background technology]

[0004] In recent years, display devices have been used in a variety of applications. For example, applications of large display devices include home televisions, digital signage, and public information displays (PIDs). Applications of small and medium-sized display devices include mobile information terminals such as smartphones and tablet devices.

[0005] As a display device, for example, a light-emitting device having a light-emitting device has been developed. Light-emitting devices that utilize the electroluminescence (hereinafter referred to as EL) phenomenon have features such as being thin and lightweight, having a high-speed response, and being capable of being driven at a low voltage. For example, Patent Document 1 discloses a flexible light-emitting device. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-197522 Summary of the Invention [Problem to be solved by the invention]

[0007] As described above, electronic devices having display devices are used for a variety of purposes, and therefore, high functionality is desirable. For example, by providing a user interface function, an imaging function, and the like, electronic devices can be made more convenient. Input functions such as touch panels are often used as user interfaces. Touch panels have the convenient function of allowing operation by touching the panel surface with a part of the body, such as a finger. However, if the panel is located in a position that cannot be physically touched, it cannot be operated. Another problem is that it is difficult to adequately manage the hygiene of the panel surface (for example, adhesion of dust, bacteria, or viruses).

[0008] Therefore, an object of one embodiment of the present invention is to provide an electronic device having a contactless input function, an electronic device having a light detection function, a novel electronic device, or a novel semiconductor device.

[0009] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract other problems from the description of the specification, drawings, claims, etc. [Means for solving the problem]

[0010] One embodiment of the present invention is an electronic device including a display device having a light-emitting device and a light-receiving device in a display portion, and an input device having the light-emitting device.

[0011] One embodiment of the present invention is an electronic device that has a display device and an input device. The display device has a light-emitting device and a light-receiving device in a display portion, the input device has a light source, and the display device displays by causing the light-emitting device to emit light, and changes the display when the light emitted by the light source is detected by the light-receiving device.

[0012] Another aspect of the present invention is an electronic device having a display device and an input device, wherein the display device has a light-emitting device, a light-receiving device, and a first communication circuit, and the input device has a light source and a second communication circuit, and the display device displays by illuminating the light-emitting device, and the input device is authenticated by the display device via the second communication circuit and the first communication circuit, and the electronic device changes the display when light emitted by the light source is detected by the light-receiving device.

[0013] The light-emitting device can have a function of emitting visible light, the light-receiving device can have a function of detecting infrared light, and the light source can have a function of emitting infrared light.

[0014] The light emitting device preferably has the capability of emitting red, green, blue or white light.

[0015] The light-receiving device preferably has a photoelectric conversion layer, and the photoelectric conversion layer preferably contains an organic compound.

[0016] The light-emitting device and the light-receiving device may have a diode configuration, and the cathode of the light-emitting device and the anode of the light-receiving device may be electrically connected, or the cathode of the light-emitting device and the cathode of the light-receiving device may be electrically connected.

[0017] It is preferable that a visible light cut filter is provided at a position overlapping the light receiving device.

[0018] The light receiving device can detect light emitted from a position where the input device is not in contact with the display device.

[0019] The light source is preferably a laser.

[0020] The light-emitting device and the light-receiving device are electrically connected to a plurality of transistors, and the transistors preferably have a metal oxide in a channel formation region, and the metal oxide preferably includes In, Zn, and M (M is Al, Ti, Ga, Ge, Sn, Y, Zr, La, Ce, Nd, or Hf). [Effects of the Invention]

[0021] According to one embodiment of the present invention, a display device having a contactless input function, a display device having a light detection function, a novel display device, or a novel semiconductor device can be provided.

[0022] Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not necessarily have all of these effects. Effects other than these can be extracted from the description in the specification, drawings, and claims. [Brief explanation of the drawings]

[0023] [Figure 1] FIG. 1 is a diagram illustrating an electronic device. [Figure 2] 2A to 2C are diagrams illustrating an electronic device. [Figure 3] FIG. 3 is a diagram illustrating the display device. [Figure 4] 4A to 4E are diagrams illustrating the configuration of a pixel. [Figure 5] FIG. 5 is a cross-sectional view illustrating the display device. [Figure 6] 6A to 6C are cross-sectional views illustrating a display device. [Figure 7] 7A and 7B are cross-sectional views illustrating a display device. [Figure 8] 8A and 8B are cross-sectional views illustrating a display device. [Figure 9]9A and 9B are cross-sectional views illustrating a display device. [Figure 10] FIG. 10 is a perspective view illustrating the display device. [Figure 11] FIG. 11 is a cross-sectional view illustrating the display device. [Figure 12] 12A and 12B are cross-sectional views illustrating the display device. [Figure 13] 13A and 13B are cross-sectional views illustrating a display device. [Figure 14] FIG. 14 is a cross-sectional view illustrating the display device. [Figure 15] 15A to 15D are diagrams illustrating the circuitry of a pixel. [Figure 16] FIG. 16 is a diagram illustrating a pixel circuit. [Figure 17] FIG. 17 is a diagram illustrating a pixel circuit. DETAILED DESCRIPTION OF THE INVENTION

[0024] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and those skilled in the art will readily understand that various modifications in form and detail may be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below. In the configuration of the invention described below, the same parts or parts having similar functions will be designated by the same reference numerals in different drawings, and repeated description thereof may be omitted. Hatching of the same elements constituting the drawings may be omitted or changed as appropriate in different drawings.

[0025] Furthermore, even if a circuit diagram shows a single element, that element may be configured as multiple elements as long as there is no functional problem. For example, multiple transistors operating as switches may be connected in series or parallel. Also, a capacitor may be divided and placed in multiple locations.

[0026] Furthermore, one conductor may have multiple functions, such as wiring, electrode, and terminal, and in this specification, multiple names may be used for the same element. Also, even when elements are shown as being directly connected to each other on a circuit diagram, in reality, the elements may be connected via one or more conductors, and in this specification, such a configuration is also included in the category of direct connection.

[0027] (Embodiment 1) In this embodiment, a display device according to one embodiment of the present invention will be described.

[0028] One embodiment of the present invention is an electronic device that includes a display device and an input device and can perform input operations without contact. The display device has a light-emitting device (also referred to as a light-emitting element) and a light-receiving device (also referred to as a light-receiving device) in a display portion. The input device has a light source.

[0029] The light-emitting device has a function of displaying information, and the light-receiving device has a function of detecting light emitted from a light source of the input device.

[0030] The light emitted by the light source of the input device is infrared light, which has virtually no visibility. Therefore, even if the light is irradiated at high brightness onto the display unit, it does not affect the visibility of the display. Furthermore, by emitting the light at high brightness, the light can be detected with high sensitivity even if the input device is located far away from the display device. With this configuration, input operations to the display device can be performed without contact.

[0031] 1 is a diagram illustrating an electronic device 30 according to one embodiment of the present invention. The electronic device 30 includes a display device 31 and an input device 32.

[0032] The functions of the display device 31 are not particularly limited, and examples include electronic devices with relatively large screens such as television devices, desktop or notebook computers, tablet computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, smartphones, portable game machines, personal digital assistants, and sound playback devices.

[0033] The display device 31 may have sensors (including sensors that can measure force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0034] The display device 31 can have various functions, such as a function to display various information (still images, videos, text images, etc.) on the display unit, a function to display a calendar, date, or time, a function to execute various software (programs), a wireless communication function, and a function to read out programs or data recorded on a recording medium.

[0035] FIG. 1 illustrates a smartphone as an example of the display device 31, with an icon 62 displayed on the display unit 61. The display device 31 also includes a housing 64, a power button 65, a button 66, a speaker 67, a microphone 68, a camera 69, and the like. The display unit 61 has a light receiving function. Note that while FIG. 1 illustrates a configuration in which multiple buttons 66 and multiple buttons 72 are provided, this is not limiting. For example, a configuration in which only one button 66 and one button 72 are provided may also be used.

[0036] The input device 32 has a function of irradiating light 74 onto the display unit 61 of the display device 31. The input device 32 has a light source 71, and can emit light 74 by operating a button 72. In addition, operations such as swiping and tapping on a touch panel can be performed by, for example, moving the irradiation position while pressing the button 72, or pressing the button 72 a specified number of times. In other words, the display on the display unit 61 can be changed by irradiating the light 74 onto the display unit 61.

[0037] Examples of changing the display include pressing button 72 to start a program, scroll the screen, display a photo or video on the display unit, or temporarily turn off display unit 61, thereby switching the image being displayed on display unit 61 or turning off the display panel.

[0038] To perform the above-mentioned operation on the display device 31 by pressing the button 72, a signal component can be superimposed on the light 74 emitted from the input device 32. For example, a pulse signal can be assigned to the above-mentioned operation, and the signal can be transmitted to the display device 31 using the light 74, and the display device 31 can receive the signal to perform the above-mentioned operation.

[0039] It is preferable that the light source 71 be capable of emitting light with strong directionality, and it is preferable to use a laser or a light-emitting diode. It is also preferable that the light source 71 emits infrared light. Infrared light is invisible light, and does not affect the visibility of the display even if the illuminance is strong.

[0040] As infrared light, light from near-infrared light to far-infrared light can be used, but since far-infrared light can be affected by heat sources and other factors that cause noise, it is preferable to use light that has a peak in the near-infrared range (wavelength 720 to 2500 nm).As semiconductors used in the light-emitting layer of lasers or light-emitting diodes that emit near-infrared light, for example, GaAs, GaAlAs, InGaAs, etc. can be used.

[0041] When light 74 emitted from input device 32 is irradiated onto display unit 61, display device 31 displays pointer 63 in the irradiated portion of display unit 61. By pointer 63 appearing on display unit 61, the position of light 74 irradiated onto display unit 61 can be visually confirmed even though light 74 is invisible light, and icon 62 can be easily selected, for example.

[0042] As a security measure, it is preferable that the input device 32 has a communication circuit 73 and the display device 31 has a communication circuit 87, and that input is only possible when the two are paired using a communication standard such as Bluetooth (registered trademark). Alternatively, a personal authentication function such as fingerprint authentication may be provided on the housing or button 72 of the input device 32, and the display device may operate to accept input only from authorized individuals.

[0043] As described above, the electronic device of one embodiment of the present invention uses light to perform an operation equivalent to a touch operation on a touch panel, and therefore, contactless operation is possible. Therefore, even if the display device 31 is out of reach, the display device 31 can be operated using the input device 32. Furthermore, since there is no need to directly touch the display portion 61 or the like with a part of the body such as a finger, the electronic device can be used hygienically.

[0044] 2A is a diagram showing how a plurality of input devices 32 are used for a display device 31 to perform a plurality of input operations simultaneously. In this way, a plurality of input devices 32 can be associated with one display device 31. Alternatively, a single input device 32 may be associated with a plurality of display devices 31.

[0045] 2B is a diagram illustrating an input device 33 having a different form from input device 32. Input device 33 has a ring-shaped housing 81 and a light source 84, and can be worn on a finger 85. Note that housing 81 is not limited to being ring-shaped, and may be belt-shaped, bag-shaped (glove-shaped), or cap-shaped.

[0046] 2B shows an example in which the input device 32 is worn near the fingertip, but it may also be worn near the base of the finger like a ring. The input device 32 may also be worn on parts of the body such as the palm, back of the hand, wrist, neck, head, torso, chest, sole, top of the foot, or ankle. The input device 32 is not limited to being worn on the fingers, but may also be worn on the toes. The input device 32 may also be worn over clothing. The size and shape of the housing 81 can be determined appropriately according to the part of the body on which it is worn.

[0047] The position of light source 84 attached to housing 81 and the light emission direction are not limited. Fig. 2B shows an example in which light is emitted in a direction approximately perpendicular to the surface of the finger pad, but light source 84 may be provided so as to emit light in an obliquely upward direction (the upper side of Fig. 2B is the upward direction).

[0048] An antenna 82 and a battery 83 are provided inside the housing 81, and as shown in Fig. 2C, radio waves transmitted from a power feeding coil 88 of the display device 31 are received by the antenna 82, and the battery 83 electrically connected to the light source 84 can be charged. In other words, even if the battery 83 has not been charged in advance, it can be charged wirelessly during use and can be used immediately. Note that a capacitor may be used as the battery 83.

[0049] The light 86 emitted by the light source 84 is preferably infrared light. Furthermore, it is preferable to use a low-power light-emitting diode that emits infrared light as the light source 84. Furthermore, the light source 84 may be a combination of a light-emitting diode and a lens (including a bullet-type light-emitting diode). Since the light of a light-emitting diode is less directional than laser light, it is preferable to use the input device 33 at a short distance from the display device 31. Furthermore, the light source 84 can also be used by contacting it with the display unit 61. Furthermore, as shown in FIG. 2B, by emitting light perpendicular to the surface of the pad of the finger, it becomes possible to perform operations similar to those of a touch panel.

[0050] 3 illustrates a display panel included in a display device of one embodiment of the present invention. The display panel includes a pixel array 14, a circuit 15, a circuit 16, a circuit 17, a circuit 18, and a circuit 19. The pixel array 14 includes pixels 10 arranged in columns and rows.

[0051] The pixel 10 can have sub-pixels 11 and 12. For example, the sub-pixel 11 has a function of emitting light for display, and the sub-pixel 12 has a function of detecting light irradiated from the outside.

[0052] In this specification, the smallest unit within a single "pixel" that performs independent operation is defined as a "sub-pixel" for convenience in the explanation, but "pixel" may be replaced with "region" and "sub-pixel" may be replaced with "pixel".

[0053] The subpixel 11 has a light-emitting device that emits visible light. The light-emitting device is preferably an EL element such as an OLED (organic light-emitting diode) or a QLED (quantum-dot light-emitting diode). Examples of light-emitting materials that the EL element may have include fluorescent materials, phosphorescent materials, thermally activated delayed fluorescence (TADF) materials, and inorganic compounds (quantum dot materials). Alternatively, an LED such as a micro LED (light-emitting diode) may be used as the light-emitting device.

[0054] The subpixel 12 has a light-receiving device that is sensitive to infrared light. For example, near-infrared light can be used as the infrared light. The light-receiving device can be a photoelectric conversion element that detects incident light and generates an electric charge. The amount of electric charge generated by the light-receiving device is determined based on the amount of incident light. For example, a pn-type or pin-type photodiode can be used as the light-receiving device.

[0055] As the light-receiving device, it is preferable to use an organic photodiode having an organic compound in the photoelectric conversion layer. Organic photodiodes can be easily made thin, lightweight, and large in area. In addition, they have a high degree of freedom in shape and design, so they can be applied to various display devices. Alternatively, photodiodes using crystalline silicon (single crystal silicon, polycrystalline silicon, microcrystalline silicon, etc.) can also be used as the light-receiving device.

[0056] In one embodiment of the present invention, an organic EL element is used as the first light-emitting device, and an organic photodiode is used as the light-receiving device. Many layers of an organic photodiode can be configured in common with those of an organic EL element. Therefore, the light-receiving device can be incorporated into a display device without significantly increasing the number of manufacturing steps. For example, the photoelectric conversion layer of the light-receiving device and the light-emitting layer of the light-emitting device may be separately formed, and the other layers may be configured identically in the light-emitting device and the light-receiving device.

[0057] The circuit 15 and the circuit 16 are driver circuits for driving the subpixel 11. The circuit 15 can function as a source driver, and the circuit 16 can function as a gate driver. The circuit 15 and the circuit 16 can be, for example, a shift register circuit.

[0058] The circuit 17 and the circuit 18 are driver circuits for driving the subpixels 12. The circuit 17 can function as a column driver, and the circuit 18 can function as a row driver. The circuit 17 and the circuit 18 can be, for example, a shift register circuit or a decoder circuit.

[0059] The circuit 19 is a circuit for reading out data output by the subpixels 12. The circuit 19 has, for example, an A / D conversion circuit and has a function of converting analog data output from the subpixels 12 into digital data. The circuit 19 may also include a CDS circuit that performs correlated double sampling on the output data.

[0060] The sub-pixels 12 can function as an input interface. They can receive infrared light emitted from outside the display panel. Therefore, by setting a threshold value for the amount of infrared light detected by the sub-pixels 12, they can function as switches. This allows the same functionality as a touch sensor to be achieved without contact. Furthermore, operations such as pointer movement can be performed without contact.

[0061] Furthermore, the light receiving device can be used to acquire image data such as fingerprints, palm prints, or irises. In other words, a biometric authentication function can be added to the display device. Note that the image data can also be acquired by bringing an object into contact with the display device.

[0062] Furthermore, imaging data such as a user's facial expression, eye movement, or changes in pupil diameter can be acquired using a light-receiving device. By analyzing this image data, it is possible to obtain information about the user's physical and mental state. Based on this information, the display device can perform operations tailored to the user's physical and mental state, such as changing either or both the display and audio output. These operations are effective for, for example, devices for VR (Virtual Reality), AR (Augmented Reality), or MR (Mixed Reality).

[0063] 4A to 4E are diagrams illustrating examples of the layout of subpixels within pixel 10. While FIG. 3 shows an example in which one subpixel 11 and one subpixel 12 are arranged within pixel 10, as shown in FIG. 4A, subpixel 11R having a red-emitting light-emitting device, subpixel 11G having a green-emitting light-emitting device, and subpixel 11B having a blue-emitting device may be arranged within pixel 10. This configuration enables color display. Note that while FIG. 4A shows a layout in which subpixels 11R, 11G, 11B, and 12 are arranged vertically and horizontally, the layout shown in FIG. 4B or 4C may also be used.

[0064] 4D and 4E, a subpixel 11W having a white-emitting light-emitting device may be provided. Because the subpixel 11W can emit white light by itself, when displaying white or a color close to white, the luminance of the subpixels of other colors can be reduced. This allows for power-saving display.

[0065] The configuration of the pixels and sub-pixels is not limited to the above, and various arrangements can be adopted.

[0066] Next, a more specific example of a display panel according to one embodiment of the present invention will be described.

[0067] 5 is a cross-sectional schematic diagram showing a display panel 50A according to one embodiment of the present invention and how light 74 emitted from an input device 32 is irradiated onto the display panel 50A. The display panel 50A has a light-receiving device 110 and a light-emitting device 190. The light-receiving device 110 corresponds to the organic photodiode of the subpixel 12. The light-emitting device 190 corresponds to the organic EL element (which emits visible light) of the subpixel 11.

[0068] The light-receiving device 110 has a pixel electrode 111, a common layer 112, a photoelectric conversion layer 113, a common layer 114, and a common electrode 115. The light-emitting device 190 has a pixel electrode 191, a common layer 112, a light-emitting layer 193, a common layer 114, and a common electrode 115.

[0069] The pixel electrode 111, the pixel electrode 191, the common layer 112, the photoelectric conversion layer 113, the light-emitting layer 193, the common layer 114, and the common electrode 115 may each have a single-layer structure or a laminated structure.

[0070] The pixel electrode 111 and the pixel electrode 191 are located on the insulating layer 214. The pixel electrode 111 and the pixel electrode 191 can be formed using the same material and in the same process.

[0071] The common layer 112 is located on the pixel electrode 111 and the pixel electrode 191. The common layer 112 is a layer that is used in common by the light-receiving device 110 and the light-emitting device 190.

[0072] The photoelectric conversion layer 113 has a region overlapping with the pixel electrode 111 via the common layer 112. The light-emitting layer 193 has a region overlapping with the pixel electrode 191 via the common layer 112. The photoelectric conversion layer 113 includes a first organic compound. The light-emitting layer 193 includes a second organic compound different from the first organic compound.

[0073] The common layer 114 is located on the common layer 112, the photoelectric conversion layer 113, and the light-emitting layer 193. The common layer 114 is a layer that is used in common by the light-receiving device 110 and the light-emitting device 190.

[0074] The common electrode 115 has an area overlapping with the pixel electrode 111 via the common layer 112, the photoelectric conversion layer 113, and the common layer 114. The common electrode 115 also has an area overlapping with the pixel electrode 191 via the common layer 112, the light-emitting layer 193, and the common layer 114. The common electrode 115 is a layer used in common by the light-receiving device 110 and the light-emitting device 190.

[0075] In the display panel of this embodiment, an organic compound is used for the photoelectric conversion layer 113 of the light-receiving device 110. The layers of the light-receiving device 110 other than the photoelectric conversion layer 113 can have a common configuration with the light-emitting device 190 (organic EL element). Therefore, by simply adding a step of depositing the photoelectric conversion layer 113 to the manufacturing process of the light-emitting device 190, the light-receiving device 110 can be formed in parallel with the formation of the light-emitting device 190. Furthermore, the light-emitting device 190 and the light-receiving device 110 can be formed on the same substrate. Therefore, the light-receiving device 110 can be built into a display device without significantly increasing the number of manufacturing steps.

[0076] In the display panel 50A, the light-receiving device 110 and the light-emitting device 190 can have a common configuration, except that the photoelectric conversion layer 113 of the light-receiving device 110 and the light-emitting layer 193 of the light-emitting device 190 are fabricated separately. However, the configuration of the light-receiving device 110 and the light-emitting device 190 is not limited to this. The light-receiving device 110 and the light-emitting device 190 may have layers fabricated separately in addition to the photoelectric conversion layer 113 and the light-emitting layer 193 (see display panels 50C, 50D, and 50E described below). It is preferable that the light-receiving device 110 and the light-emitting device 190 have one or more layers that are used in common (common layers). This allows the light-receiving device 110 to be incorporated into a display device without significantly increasing the number of fabrication steps.

[0077] The display panel 50A has a light receiving device 110, a light emitting device 190, a transistor 41, a transistor 42, and the like between a pair of substrates (substrate 151 and substrate 152).

[0078] In the light-receiving device 110, the common layer 112, photoelectric conversion layer 113, and common layer 114, which are respectively located between the pixel electrode 111 and the common electrode 115, can also be called organic layers (layers containing an organic compound). The pixel electrode 111 preferably has a function of reflecting infrared light. The common electrode 115 has a function of transmitting visible light and infrared light.

[0079] The light receiving device 110 has a function of detecting light. Specifically, the light receiving device 110 is a photoelectric conversion element that converts incident light 74 into an electrical signal.

[0080] A light-shielding layer 148 is provided on the surface of the substrate 152 facing the substrate 151. The light-shielding layer 148 has openings at positions overlapping the light-receiving device 110 and the light-emitting device 190. By providing the light-shielding layer 148, the range in which the light-receiving device 110 detects light can be controlled.

[0081] The light-shielding layer 148 may be made of a material that blocks light emitted by the light-emitting device 190. The light-shielding layer 148 preferably absorbs visible light and infrared light. The light-shielding layer 148 may be made of, for example, a metal material, or a resin material containing a pigment (such as carbon black) or a dye. The light-shielding layer 148 may have a laminated structure of a red color filter, a green color filter, and a blue color filter.

[0082] Furthermore, a filter 149 that cuts off light with wavelengths shorter than that of the light emitted by the light-emitting device 190 (infrared light) is preferably provided in an opening of the light-shielding layer 148 at a position overlapping the light-receiving device 110. Examples of the filter 149 that can be used include a long-pass filter that cuts off light with wavelengths shorter than that of infrared light, and a band-pass filter that cuts off wavelengths in at least the visible light range. Examples of filters that can cut off visible light include resin films containing dyes and semiconductor films such as amorphous silicon thin films. By providing the filter 149, it is possible to suppress the incidence of visible light on the light-receiving device 110, enabling infrared light to be detected with low noise.

[0083] The filter 149 may be stacked on the light receiving device 110 as shown in FIG. 6A.

[0084] 6B, the filter 149 may be lenticular. The lens-shaped filter 149 is a convex lens having a convex surface facing the substrate 151. The filter 149 may also be arranged so that the convex surface faces the substrate 152.

[0085] When both the light-shielding layer 148 and the lens-type filter 149 are formed on the same surface of the substrate 152, the order of formation does not matter. Although Fig. 6B shows an example in which the lens-type filter 149 is formed first, the light-shielding layer 148 may also be formed first. In Fig. 6B, the edge of the lens-type filter 149 is covered with the light-shielding layer 148.

[0086] In the configuration shown in FIG. 6B, light 74 enters the light receiving device 110 through a lens-type filter 149. By using a lens-type filter 149, the imaging range of the light receiving device 110 can be narrowed, and overlapping of the imaging ranges of adjacent light receiving devices 110 can be prevented. This allows for capturing clear images with less blur. Furthermore, by using a lens-type filter 149, the opening of the light-shielding layer 148 on the light receiving device 110 can be enlarged. Therefore, the amount of light incident on the light receiving device 110 can be increased, and the light detection sensitivity can be improved.

[0087] The lens-type filter 149 can be formed directly on the substrate 152 or on the light-receiving device 110. Alternatively, a separately fabricated microlens array or the like may be attached to the substrate 152.

[0088] 6C, a configuration may be adopted in which the filter 149 is not provided. If the light receiving device 110 has characteristics such that it is not sensitive to visible light or is sufficiently more sensitive to infrared light than to visible light, the filter 149 can be omitted. In this case, a lens having a shape similar to the lens-type filter 149 shown in FIG. 6B may be provided overlapping the light receiving device 110. The lens may be made of a material that transmits visible light.

[0089] In the light-emitting device 190, the common layer 112, the light-emitting layer 193, and the common layer 114 located between the pixel electrode 191 and the common electrode 115 can also be called an EL layer. The pixel electrode 191 preferably has the function of reflecting at least visible light.

[0090] The light-emitting device 190 has a function of emitting visible light. Specifically, the light-emitting device 190 is an electroluminescent device that emits light 21 toward the substrate 152 by applying a voltage between the pixel electrode 191 and the common electrode 115.

[0091] The pixel electrode 111 is electrically connected to the source or drain of the transistor 41 through an opening provided in the insulating layer 214. An end of the pixel electrode 111 is covered with a partition wall 216.

[0092] The pixel electrode 191 is electrically connected to the source or drain of the transistor 42 through an opening provided in the insulating layer 214. An end of the pixel electrode 191 is covered with a partition wall 216. The transistor 42 has a function of controlling driving of the light-emitting device 190.

[0093] The transistor 41 and the transistor 42 are adjacent to each other on the same layer (substrate 151 in FIGS. 5 and 6).

[0094] At least a part of the circuit electrically connected to the light-receiving device 110 is preferably formed using the same material and in the same process as the circuit electrically connected to the light-emitting device 190. This allows the display device to be thinner and the manufacturing process to be simplified compared to when the two circuits are formed separately.

[0095] The light-receiving device 110 and the light-emitting device 190 are preferably covered with a protective layer 195. 5 and 6 show an example in which the protective layer 195 is provided on and in contact with the common electrode 115. Providing the protective layer 195 prevents impurities such as water from entering the light-receiving device 110 and the light-emitting device 190, thereby improving the reliability of the light-receiving device 110 and the light-emitting device 190. In addition, the protective layer 195 and the substrate 152 are bonded together by an adhesive layer 142.

[0096] 7A, the protective layer 195 may not be provided on the light receiving device 110 and the light emitting device 190. In this case, the common electrode 115 and the substrate 152 are bonded together by the adhesive layer 142.

[0097] 7B, a configuration may be adopted in which the light-shielding layer 148 is not provided. This increases the amount of light emitted to the outside by the light-emitting device 190 and the amount of light received by the light-receiving device 110, thereby improving the detection sensitivity.

[0098] 8A , the display panel of one embodiment of the present invention may have the structure of display panel 50B. Display panel 50B differs from display panel 50A in that it does not include substrate 151, substrate 152, and partition wall 216, but includes substrate 153, substrate 154, adhesive layer 155, insulating layer 212, and partition wall 217.

[0099] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The substrate 154 and the protective layer 195 are bonded together by an adhesive layer 142.

[0100] The display panel 50B is fabricated by transferring the insulating layer 212, the transistors 41 and 42, the light-receiving device 110, the light-emitting device 190, and the like, which are formed on a fabrication substrate, onto the substrate 153. The substrates 153 and 154 are preferably flexible, which allows the display panel 50B to be flexible. For example, the substrates 153 and 154 are preferably made of resin.

[0101] Substrates 153 and 154 can be made of polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resins (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. One or both of substrates 153 and 154 may be made of glass having a thickness sufficient to provide flexibility.

[0102] The substrate of the display device of this embodiment may be a film having high optical isotropy, such as a triacetyl cellulose (TAC, also called cellulose triacetate) film, a cycloolefin polymer (COP) film, a cycloolefin copolymer (COC) film, or an acrylic film.

[0103] The partition wall 217 is preferably capable of absorbing the light emitted by the light emitting device 190. The partition wall 217 can be formed using, for example, a resin material containing a pigment or a dye.

[0104] A portion of the light 23c emitted by the light-emitting device 190 is reflected by the substrate 154 and the partition wall 217. This reflected light 23d may be incident on the light-receiving device 110. Furthermore, when the light 23c passes through the partition wall 217 and is reflected by a transistor, a wiring, or the like, the reflected light may be incident on the light-receiving device 110. The light 23c is absorbed by the partition wall 217, so that the reflected light 23d can be prevented from being incident on the light-receiving device 110. This reduces noise and improves the light detection accuracy of the light-receiving device 110.

[0105] It is preferable that the partition 217 absorbs at least light of a wavelength that can be detected by the light-receiving device 110. For example, when the light-receiving device 110 detects visible light emitted by the light-emitting device 190, it is preferable that the partition 217 be able to absorb visible light.

[0106] Although the above describes an example in which the light-emitting device and the light-receiving device have two common layers, the present invention is not limited to this. Below, an example in which the common layer has a different configuration will be described.

[0107] 8B shows a schematic cross-sectional view of display panel 50C. Display panel 50C differs from display panel 50A in that it does not have common layer 114, but has buffer layer 184 and buffer layer 194. Buffer layer 184 and buffer layer 194 may have a single-layer structure or a multilayer structure.

[0108] In the display panel 50C, the light-receiving device 110 has a pixel electrode 111, a common layer 112, a photoelectric conversion layer 113, a buffer layer 184, and a common electrode 115. In the display panel 50C, the light-emitting device 190 has a pixel electrode 191, a common layer 112, a light-emitting layer 193, a buffer layer 194, and a common electrode 115.

[0109] The display panel 50C shows an example in which a buffer layer 184 between the common electrode 115 and the photoelectric conversion layer 113 and a buffer layer 194 between the common electrode 115 and the light-emitting layer 193 are separately formed. The buffer layer 184 and the buffer layer 194 can be, for example, one or both of an electron injection layer and an electron transport layer.

[0110] 9A shows a schematic cross-sectional view of display panel 50D. Display panel 50D differs from display panel 50A in that it does not have common layer 112, but has buffer layer 182 and buffer layer 192. Buffer layer 182 and buffer layer 192 may have a single-layer structure or a multilayer structure.

[0111] In the display panel 50D, the light-receiving device 110 includes a pixel electrode 111, a buffer layer 182, a photoelectric conversion layer 113, a common layer 114, and a common electrode 115. In the display panel 50D, the light-emitting device 190 includes a pixel electrode 191, a buffer layer 192, a light-emitting layer 193, a common layer 114, and a common electrode 115.

[0112] The display panel 50D shows an example in which a buffer layer 182 between the pixel electrode 111 and the photoelectric conversion layer 113 and a buffer layer 192 between the pixel electrode 191 and the light-emitting layer 193 are separately formed. The buffer layer 182 and the buffer layer 192 can be, for example, one or both of a hole injection layer and a hole transport layer.

[0113] 9B shows a schematic cross-sectional view of display panel 50E. Display panel 50E differs from display panel 50A in that it does not have common layer 112 and common layer 114, but has buffer layer 182, buffer layer 184, buffer layer 192, and buffer layer 194.

[0114] In the display panel 50E, the light-receiving device 110 has a pixel electrode 111, a buffer layer 182, a photoelectric conversion layer 113, a buffer layer 184, and a common electrode 115. In the display panel 50E, the light-emitting device 190 has a pixel electrode 191, a buffer layer 192, a light-emitting layer 193, a buffer layer 194, and a common electrode 115.

[0115] In the manufacturing process of the light receiving device 110 and the light emitting device 190, not only the photoelectric conversion layer 113 and the light emitting layer 193 can be separately manufactured, but also other layers can be separately manufactured.

[0116] The display panel 50E shows an example in which the light-receiving device 110 and the light-emitting device 190 do not have a common layer between a pair of electrodes (the pixel electrode 111 or the pixel electrode 191 and the common electrode 115). In the manufacturing process of the light-receiving device 110 and the light-emitting device 190 of the display panel 50E, first, the pixel electrode 111 and the pixel electrode 191 are formed on the insulating layer 214 using the same material and in the same process. Then, the buffer layer 182, the photoelectric conversion layer 113, and the buffer layer 184 are formed on the pixel electrode 111, the buffer layer 192, the light-emitting layer 193, and the buffer layer 194 are formed on the pixel electrode 191, and the common electrode 115 is formed to cover the buffer layer 184, the buffer layer 194, etc.

[0117] The order in which the stacked structure of the buffer layer 182, the photoelectric conversion layer 113, and the buffer layer 184 and the stacked structure of the buffer layer 192, the light-emitting layer 193, and the buffer layer 194 are formed is not particularly limited. For example, the buffer layer 192, the light-emitting layer 193, and the buffer layer 194 may be formed after the buffer layer 182, the photoelectric conversion layer 113, and the buffer layer 184 are formed. Conversely, the buffer layer 192, the light-emitting layer 193, and the buffer layer 194 may be formed before the buffer layer 182, the photoelectric conversion layer 113, and the buffer layer 184 are formed. Furthermore, the buffer layer 182, the buffer layer 192, the photoelectric conversion layer 113, the light-emitting layer 193, and the like may be formed alternately in this order.

[0118] A more specific example of the structure of the display panel of one embodiment of the present invention will be described below.

[0119] Fig. 10 shows a perspective view of the display panel 100A. The display panel 100A has a configuration in which a substrate 151 and a substrate 152 are bonded together. In Fig. 10, the substrate 152 is indicated by a dashed line.

[0120] The display panel 100A has a display unit 162, circuits 164a, 164b, wiring 165a, wiring 165b, etc. Also, Fig. 10 shows an example in which an IC (integrated circuit) 173a, an FPC 172a, an IC 173b, and an FPC 172b are mounted on the display panel 100A. Therefore, the configuration shown in Fig. 10 can also be said to be a display module having the display panel 100A, an IC, and an FPC.

[0121] The circuit 164a may be a gate driver for displaying, and the circuit 164b may be a row driver for capturing images (photodetection).

[0122] The wiring 165a has a function of supplying signals and power to the subpixels 11 and 12 and the circuit 164a. The signals and power are input from the outside via the FPC 172a or input to the wiring 165a from the IC 173a.

[0123] The wiring 165b has a function of supplying signals and power to the subpixels 12 and the circuit 164b. The signals and power are input from the outside via the FPC 172b or input to the wiring 165b from the IC 173b.

[0124] 10 shows an example in which ICs 173a and 173b are provided on substrate 151 using a COG (Chip On Glass) method, but a TCP (Tape Carrier Package) method or a COF (Chip On Film) method may also be used. For example, IC 173a may be an IC having the function of a source driver connected to subpixels 11 and 12. For example, IC 173b may be an IC having the function of a column driver connected to subpixel 12 and a signal processing circuit such as an A / D converter.

[0125] The driver circuit may be provided on the substrate 151 in the same manner as the transistors and the like that constitute the pixel circuits.

[0126] FIG. 11 shows an example of a cross section of a part of the region including the FPC 172a, a part of the region including the circuit 164a, a part of the region including the display unit 162, and a part of the region including the edge portion of the display panel 100A shown in FIG.

[0127] The display panel 100A shown in FIG. 11 includes a transistor 201, a transistor 205, a transistor 206, a light-emitting device 190, a light-receiving device 110, and the like between a substrate 151 and a substrate 152.

[0128] The substrate 152 and the insulating layer 214 are bonded via an adhesive layer 142. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light-emitting device 190 and the light-receiving device 110. A space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 is filled with an inert gas (such as nitrogen or argon), and a hollow sealing structure is applied. The adhesive layer 142 may be provided so as to overlap the light-emitting device 190. Furthermore, the region surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 may be filled with a resin different from that of the adhesive layer 142.

[0129] The light-emitting device 190 has a layered structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193, a common layer 114, and a common electrode 115 are layered in this order from the insulating layer 214 side. The pixel electrode 191 is connected to a conductive layer 222b of the transistor 206 through an opening provided in the insulating layer 214. The transistor 206 has a function of controlling driving of the light-emitting device 190. An end of the pixel electrode 191 is covered with a partition wall 216.

[0130] The light-receiving device 110 has a layered structure in which a pixel electrode 111, a common layer 112, a photoelectric conversion layer 113, a common layer 114, and a common electrode 115 are layered in this order from the insulating layer 214 side. The pixel electrode 111 is electrically connected to a conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214. An end of the pixel electrode 111 is covered with a partition wall 216.

[0131] Light emitted from the light-emitting device 190 is emitted toward the substrate 152. Light is incident on the light-receiving device 110 through the substrate 152 and the space 143. The substrate 152 is preferably made of a material that is highly transparent to visible light and infrared light.

[0132] The pixel electrode 111 and the pixel electrode 191 can be manufactured using the same material and in the same process. The common layer 112, the common layer 114, and the common electrode 115 are used in both the light-receiving device 110 and the light-emitting device 190. The light-receiving device 110 and the light-emitting device 190 can have the same configuration except for the configurations of the photoelectric conversion layer 113 and the light-emitting layer 193. This allows the light-receiving device 110 to be built into the display panel 100A without significantly increasing the number of manufacturing processes.

[0133] A light-shielding layer 148 is provided on the surface of the substrate 152 facing the substrate 151. The light-shielding layer 148 has openings at a position overlapping the light-receiving device 110 and a position overlapping the light-emitting device 190. A filter 149 that cuts visible light is provided at the position overlapping the light-receiving device 110. Note that a configuration without the filter 149 is also possible.

[0134] The transistor 201, the transistor 205, and the transistor 206 are all formed over a substrate 151. These transistors can be manufactured using the same material and through the same process.

[0135] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided in this order on the substrate 151. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and functions as a planarizing layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0136] It is preferable that at least one insulating layer covering the transistor is made of a material that is resistant to the diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the display device.

[0137] It is preferable to use an inorganic insulating film as the insulating layer 211, the insulating layer 213, and the insulating layer 215. Examples of the inorganic insulating film that can be used include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may be used. Two or more of the above insulating films may be stacked.

[0138] An organic insulating film is suitable for the insulating layer 214, which functions as a planarizing layer. Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins.

[0139] Here, organic insulating films often have a lower barrier property against impurities than inorganic insulating films. Therefore, it is preferable that the organic insulating film has an opening near the edge of the display panel 100A. This makes it possible to prevent impurities from diffusing from the edge of the display panel 100A through the organic insulating film. Alternatively, the organic insulating film may be formed so that the edge of the organic insulating film is located inside the edge of the display panel 100A, so that the organic insulating film is not exposed at the edge of the display panel 100A.

[0140] 11, an opening is formed in insulating layer 214. This makes it possible to prevent impurities from diffusing from the outside into display unit 162 through insulating layer 214, even when an organic insulating film is used for insulating layer 214. This improves the reliability of display panel 100A.

[0141] The transistor 201, the transistor 205, and the transistor 206 each include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0142] The structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0143] The transistors 201, 205, and 206 each have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and supplied with the same signal to drive the transistor. Alternatively, a potential for controlling the threshold voltage of the transistor may be applied to one of the two gates, and a potential for driving the transistor may be applied to the other gate.

[0144] The crystallinity of the semiconductor material used for the transistor is not particularly limited, and any of an amorphous semiconductor, a single-crystal semiconductor, and a semiconductor having crystallinity other than single crystal (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a single-crystal semiconductor or a crystalline semiconductor is preferable because it can suppress deterioration of the transistor characteristics.

[0145] The semiconductor layer of the transistor preferably contains a metal oxide (also referred to as an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may contain silicon. Examples of silicon include amorphous silicon and crystalline silicon (such as low-temperature polysilicon and single-crystal silicon).

[0146] The semiconductor layer preferably contains, for example, indium, M (wherein M is one or more elements selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.

[0147] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) as the semiconductor layer.

[0148] When forming an In-M-Zn oxide film by sputtering, the atomic ratio of In in the sputtering target is preferably equal to or greater than the atomic ratio of M. Examples of atomic ratios of metal elements in such sputtering targets include In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=2:1:3, In:M:Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4.1, In:M:Zn=5:1:6, In:M:Zn=5:1:7, In:M:Zn=5:1:8, In:M:Zn=6:1:6, and In:M:Zn=5:2:5.

[0149] As the sputtering target, a target containing a polycrystalline oxide is preferably used because it facilitates the formation of a crystalline semiconductor layer. The atomic ratio of the semiconductor layer to be formed can vary by ±40% of the atomic ratio of the metal elements contained in the sputtering target. For example, if the composition of the sputtering target used for the semiconductor layer is In:Ga:Zn=4:2:4.1 [atomic ratio], the composition of the semiconductor layer to be formed may be close to In:Ga:Zn=4:2:3 [atomic ratio].

[0150] When describing an atomic ratio of In:Ga:Zn=4:2:3 or thereabout, this includes a case where, when the atomic ratio of In is 4, the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or more and 4 or less. When describing an atomic ratio of In:Ga:Zn=5:1:6 or thereabout, this includes a case where, when the atomic ratio of In is 5, the atomic ratio of Ga is more than 0.1 and 2 or less, and the atomic ratio of Zn is 5 or more and 7 or less. When describing an atomic ratio of In:Ga:Zn=1:1:1 or thereabout, this includes a case where, when the atomic ratio of In is 1, the atomic ratio of Ga is more than 0.1 and 2 or less, and the atomic ratio of Zn is more than 0.1 and 2 or less.

[0151] The transistors included in the circuit 164a and the transistors included in the display portion 162 may have the same structure or different structures. The transistors included in the circuit 164a may all have the same structure or may have two or more types. Similarly, the transistors included in the display portion 162 may all have the same structure or may have two or more types.

[0152] A connection section 204 is provided in an area of ​​the substrate 151 where the substrate 152 does not overlap. In the connection section 204, the wiring 165 is electrically connected to the FPC 172a via the conductive layer 166 and the connection layer 242. The conductive layer 166, which is obtained by processing the same conductive film as the pixel electrode 191, is exposed on the upper surface of the connection section 204. This allows the connection section 204 and the FPC 172a to be electrically connected via the connection layer 242.

[0153] Various optical members can be arranged on the outside of substrate 152. Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light collecting film. In addition, an antistatic film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses scratches caused by use, an impact absorbing layer, etc. may be arranged on the outside of substrate 152.

[0154] The substrate 151 and the substrate 152 may be made of glass, quartz, ceramic, sapphire, resin, or the like.

[0155] The adhesive layer can be made of various curable adhesives, such as photo-curable adhesives (e.g., ultraviolet curable), reactive curable adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. Materials with low moisture permeability, such as epoxy resin, are particularly preferred. Two-component resins may also be used. Adhesive sheets, etc., may also be used.

[0156] The connection layer 242 may be made of an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0157] The light-emitting device 190 may be a top-emission type, a bottom-emission type, a dual-emission type, etc. In one embodiment of the present invention, a top-emission type is preferable, but other configurations may also be applied by arranging the light exit surface of the light-emitting device 190 and the light incident surface of the light-receiving device 110 in the same direction.

[0158] The light-emitting device 190 has at least a light-emitting layer 193. The light-emitting device 190 may further have, in addition to the light-emitting layer 193, a layer containing a substance with high hole injection properties, a substance with high hole transport properties, a hole-blocking material, a substance with high electron transport properties, a substance with high electron injection properties, or a bipolar substance (a substance with high electron transport properties and hole transport properties). For example, the common layer 112 preferably has one or both of a hole injection layer and a hole transport layer. For example, the common layer 114 preferably has one or both of an electron transport layer and an electron injection layer.

[0159] Both low molecular weight compounds and high molecular weight compounds may be used, and may contain inorganic compounds, for the common layer 112, the light emitting layer 193, and the common layer 114. The layers constituting the common layer 112, the light emitting layer 193, and the common layer 114 may be formed by a method such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, or a coating method.

[0160] The light-emitting layer 193 may contain an inorganic compound such as quantum dots as a light-emitting material.

[0161] The photoelectric conversion layer 113 of the light-receiving device 110 includes a semiconductor. As the semiconductor, an inorganic semiconductor such as silicon or an organic semiconductor including an organic compound can be used. In this embodiment, an example in which an organic semiconductor is used as the semiconductor included in the photoelectric conversion layer 113 is shown. By using an organic semiconductor, the light-emitting layer 193 of the light-emitting device 190 and the photoelectric conversion layer 113 of the light-receiving device 110 can be formed by the same method (for example, vacuum deposition), which is preferable because common manufacturing equipment can be used.

[0162] The n-type semiconductor material of the photoelectric conversion layer 113 is fullerene (e.g., C 60 , C 70 Examples of the p-type semiconductor material of the photoelectric conversion layer 113 include electron-accepting organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), and zinc phthalocyanine (ZnPc).

[0163] For example, the photoelectric conversion layer 113 can be formed by co-evaporating an n-type semiconductor and a p-type semiconductor.

[0164] Materials that can be used for the gate, source, and drain of a transistor as well as conductive layers such as various wirings and electrodes that constitute a display device include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, as well as alloys containing these metals as main components, etc. Films containing these materials can be used as a single layer structure or a stacked layer structure.

[0165] Examples of light-transmitting conductive materials include conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene. Metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, as well as alloy materials containing these metal materials, can also be used. Nitrides of these metal materials (e.g., titanium nitride) can also be used. When using metallic materials or alloy materials (or their nitrides), it is preferable to thin them sufficiently to ensure light-transmitting properties. A stacked film of the above materials can also be used as the conductive layer. For example, a stacked film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These materials can also be used for conductive layers such as various wirings and electrodes constituting a display device, and conductive layers (conductive layers functioning as pixel electrodes or common electrodes) in display elements.

[0166] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0167] 12A shows a cross-sectional view of display panel 100B. Display panel 100B differs from display panel 100A mainly in that display panel 100B has protective layer 195.

[0168] By providing a protective layer 195 that covers the light-receiving device 110 and the light-emitting device 190, it is possible to prevent impurities such as water from diffusing into the light-receiving device 110 and the light-emitting device 190, thereby improving the reliability of the light-receiving device 110 and the light-emitting device 190.

[0169] In a region 228 near the edge of the display panel 100B, it is preferable that the insulating layer 215 and the protective layer 195 contact each other through the opening in the insulating layer 214. In particular, it is preferable that the inorganic insulating film of the insulating layer 215 and the inorganic insulating film of the protective layer 195 contact each other. This makes it possible to suppress the diffusion of impurities from the outside into the display unit 162 through the organic insulating film. This can therefore improve the reliability of the display panel 100B.

[0170] 12B shows an example of a three-layer structure of protective layer 195. Protective layer 195 has an inorganic insulating layer 195a on common electrode 115, an organic insulating layer 195b on inorganic insulating layer 195a, and an inorganic insulating layer 195c on organic insulating layer 195b.

[0171] The end of the inorganic insulating layer 195a and the end of the inorganic insulating layer 195c extend outward beyond the end of the organic insulating layer 195b and are in contact with each other. The inorganic insulating layer 195a is in contact with the insulating layer 215 (inorganic insulating layer) through an opening in the insulating layer 214 (organic insulating layer). This allows the insulating layer 215 and the protective layer 195 to surround the light-receiving device 110 and the light-emitting device 190, thereby improving the reliability of the light-receiving device 110 and the light-emitting device 190.

[0172] In this way, the protective layer 195 may have a laminated structure of an organic insulating film and an inorganic insulating film. In this case, it is preferable that the end of the inorganic insulating film extends further outward than the end of the organic insulating film.

[0173] In the display panel 100B, the protective layer 195 and the substrate 152 are bonded together by an adhesive layer 142. The adhesive layer 142 is provided so as to overlap the light receiving device 110 and the light emitting device 190, respectively, and a solid sealing structure is applied to the display panel 100B.

[0174] 13A shows a cross-sectional view of display panel 100C. Display panel 100C differs from display panel 100B mainly in that the transistor structure is different and that display panel 100C does not have light-shielding layer 148.

[0175] The display panel 100C includes a transistor 208, a transistor 209, and a transistor 210 on a substrate 151.

[0176] The transistor 208, the transistor 209, and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer including a channel formation region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located between the conductive layer 223 and the channel formation region 231i.

[0177] The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively. One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[0178] The pixel electrode 191 of the light-emitting device 190 is electrically connected to the other of the pair of low-resistance regions 231n of the transistor 208 via the conductive layer 222b.

[0179] The pixel electrode 111 of the light receiving device 110 is electrically connected to the other of the pair of low resistance regions 231n of the transistor 209 via the conductive layer 222b.

[0180] 13A shows an example in which the insulating layer 225 covers the top and side surfaces of the semiconductor layer. FIG. 13B shows an example in which the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but does not overlap with the low-resistance region 231n. For example, the structure shown in FIG. 13B can be fabricated by processing the insulating layer 225 using the conductive layer 223 as a mask. In FIG. 13B, the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are each connected to the low-resistance region 231n through openings in the insulating layer 215. Furthermore, an insulating layer 218 may be provided to cover the transistor.

[0181] A cross-sectional view of the display panel 100D is shown in Figure 14. The display panel 100D differs from the display panel 100C mainly in the configuration of the substrates.

[0182] The display panel 100D does not have the substrate 151 and the substrate 152, but has the substrate 153, the substrate 154, the adhesive layer 155, and the insulating layer 212.

[0183] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The substrate 154 and the protective layer 195 are bonded together by an adhesive layer 142.

[0184] The display panel 100D is fabricated by transferring the insulating layer 212, the transistor 208, the transistor 209, the light-receiving device 110, the light-emitting device 190, and the like, which are formed on a fabrication substrate, onto the substrate 153. The substrate 153 and the substrate 154 are preferably flexible, which allows the display panel 100D to be flexible.

[0185] The insulating layer 212 can be formed using the same inorganic insulating film as the insulating layer 211, the insulating layer 213, and the insulating layer 215. Alternatively, the insulating layer 212 may be formed using a stacked film of an organic insulating film and an inorganic insulating film. In this case, the film on the transistor 209 side is preferably formed using an inorganic insulating film.

[0186] The above is a description of an example of the configuration of the display device.

[0187] The display device of this embodiment has a light-receiving device and a light-emitting device in a display portion, and the display portion has both a function of displaying an image and a function of detecting light. This allows the electronic device to be made smaller and lighter than when a sensor is provided outside the display portion or the display device. Furthermore, by combining the sensor provided outside the display portion or the display device, a more multifunctional electronic device can be realized.

[0188] At least one layer of the light-receiving device, other than the photoelectric conversion layer, can have a common structure with the light-emitting device (EL element). Furthermore, all layers of the light-receiving device, other than the photoelectric conversion layer, can have a common structure with the light-emitting device (EL element). For example, by simply adding a step of forming a photoelectric conversion layer to the manufacturing process of the light-emitting device, the light-emitting device and the light-receiving device can be formed on the same substrate. Furthermore, the pixel electrodes and common electrodes of the light-receiving device and the light-emitting device can be formed using the same material and in the same process. Furthermore, by manufacturing the circuit electrically connected to the light-receiving device and the circuit electrically connected to the light-emitting device using the same material and in the same process, the manufacturing process of the display device can be simplified. In this way, a highly convenient display device incorporating a light-receiving device can be manufactured without complex processes.

[0189] Metal oxides that can be used in the semiconductor layer of a transistor will be described below.

[0190] In this specification and the like, nitrogen-containing metal oxides may also be collectively referred to as metal oxides. Nitrogen-containing metal oxides may also be referred to as metal oxynitrides. For example, nitrogen-containing metal oxides such as zinc oxynitride (ZnON) may be used for the semiconductor layer.

[0191] In this specification, etc., they may be referred to as CAAC (c-axis aligned crystal) and CAC (Cloud-Aligned Composite). CAAC represents an example of a crystal structure, and CAC represents an example of a function or material configuration.

[0192] For example, the semiconductor layer can be made of a cloud-aligned composite (CAC)-oxide semiconductor (OS).

[0193] CAC-OS or CAC-metal oxide has a conductive function in part of the material and an insulating function in part of the material, and functions as a semiconductor as a whole. When CAC-OS or CAC-metal oxide is used in the semiconductor layer of a transistor, the conductive function is a function of allowing electrons (or holes) to flow as carriers, and the insulating function is a function of preventing the flow of electrons as carriers. By making the conductive function and the insulating function act complementarily, a switching function (on / off function) can be imparted to CAC-OS or CAC-metal oxide. By separating the respective functions in CAC-OS or CAC-metal oxide, both functions can be maximized.

[0194] Furthermore, CAC-OS or CAC-metal oxide has conductive regions and insulating regions. The conductive regions have the above-mentioned conductive function, and the insulating regions have the above-mentioned insulating function. In addition, the conductive regions and the insulating regions may be separated at the nanoparticle level in the material. In addition, the conductive regions and the insulating regions may be unevenly distributed in the material. In addition, the conductive regions may be observed as connected in a cloud-like shape with the periphery blurred.

[0195] In addition, in CAC-OS or CAC-metal oxide, the conductive regions and the insulating regions may be dispersed in the material with sizes of 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm.

[0196] Furthermore, the CAC-OS or CAC-metal oxide is composed of components with different band gaps. For example, the CAC-OS or CAC-metal oxide is composed of a component with a wide gap due to the insulating region and a component with a narrow gap due to the conductive region. In this configuration, when carriers flow, the carriers mainly flow in the component with the narrow gap. Furthermore, the component with the narrow gap acts complementarily with the component with the wide gap, and carriers also flow in the component with the wide gap in conjunction with the component with the narrow gap. Therefore, when the CAC-OS or CAC-metal oxide is used in the channel formation region of a transistor, the transistor can achieve high current driving power in the on state, i.e., a large on-state current, and high field-effect mobility.

[0197] That is, CAC-OS or CAC-metal oxide can also be called a matrix composite or a metal matrix composite.

[0198] Oxide semiconductors (metal oxides) are classified into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors, such as c-axis aligned crystalline oxide semiconductors (CAAC-OS), polycrystalline oxide semiconductors, nanocrystalline oxide semiconductors (nc-OS), amorphous-like oxide semiconductors (a-like OS), and amorphous oxide semiconductors.

[0199] CAAC-OS has a c-axis orientation and a distorted crystal structure in which multiple nanocrystals are connected in the ab-plane direction. The distorted crystal structure refers to the change in the lattice orientation between regions with a uniform lattice arrangement and regions with a different uniform lattice arrangement in the regions where multiple nanocrystals are connected.

[0200] Nanocrystals are basically hexagonal, but not necessarily regular hexagons; they can also have non-regular hexagonal shapes. The distortion can also result in pentagonal, heptagonal, and other lattice arrangements. It is difficult to identify clear grain boundaries in CAAC-OS, even near the distortion. This indicates that the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This is because CAAC-OS can tolerate distortion due to the lack of close-packed oxygen atom arrangement in the ab-plane direction and the change in interatomic bond distance caused by the substitution of metal elements.

[0201] CAAC-OS also tends to have a layered crystal structure (also referred to as a layered structure) in which a layer containing indium and oxygen (hereinafter referred to as an In layer) and a layer containing the element M, zinc, and oxygen (hereinafter referred to as an (M,Zn) layer) are stacked. Note that indium and the element M are mutually substituted, and when the element M in an (M,Zn) layer is substituted with indium, it can also be expressed as an (In,M,Zn) layer. When the indium in an In layer is substituted with the element M, it can also be expressed as an (In,M) layer.

[0202] CAAC-OS is a metal oxide with high crystallinity. On the other hand, it is difficult to identify clear grain boundaries in CAAC-OS, so it is said that the decrease in electron mobility due to grain boundaries is unlikely to occur. In addition, since the crystallinity of metal oxides can be decreased by the inclusion of impurities or the generation of defects, CAAC-OS is not prone to impurities and defects (oxygen vacancies (V OIt can also be said that these metal oxides have low oxygen vacancies. Therefore, metal oxides with CAAC-OS have stable physical properties. Therefore, metal oxides with CAAC-OS are heat-resistant and highly reliable.

[0203] The nc-OS has periodic atomic arrangement in a microscopic region (for example, a region of 1 nm to 10 nm, particularly a region of 1 nm to 3 nm). Furthermore, the nc-OS exhibits no regularity in the crystal orientation between different nanocrystals. Therefore, no orientation is observed throughout the film. Therefore, depending on the analytical method, the nc-OS may be indistinguishable from a-like OS and amorphous oxide semiconductors.

[0204] Indium-gallium-zinc oxide (IGZO), a type of metal oxide containing indium, gallium, and zinc, can sometimes have a stable structure when made into the above-mentioned nanocrystals. In particular, because IGZO tends to have difficulty growing crystals in the atmosphere, it may be structurally more stable when made into small crystals (such as the above-mentioned nanocrystals) than large crystals (here, crystals of a few millimeters or a few centimeters).

[0205] The a-like OS is a metal oxide having a structure between the nc-OS and the amorphous oxide semiconductor. The a-like OS has pores or low-density regions. That is, the a-like OS has lower crystallinity than the nc-OS and CAAC-OS.

[0206] Oxide semiconductors (metal oxides) have a variety of structures, each with different characteristics. The oxide semiconductor of one embodiment of the present invention may include two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-like OS, an nc-OS, and a CAAC-OS.

[0207] The metal oxide film functioning as the semiconductor layer can be formed by sputtering using either or both of an inert gas and an oxygen gas. The oxygen flow rate (oxygen partial pressure) during the formation of the metal oxide film is not particularly limited. However, in order to obtain a transistor with high field-effect mobility, the oxygen flow rate (oxygen partial pressure) during the formation of the metal oxide film is preferably 0% to 30%, more preferably 5% to 30%, and even more preferably 7% to 15%.

[0208] The metal oxide preferably has an energy gap of 2 eV or more, more preferably 2.5 eV or more, and further preferably 3 eV or more. By using a metal oxide with such a wide energy gap, the off-state current of a transistor can be reduced.

[0209] Transistors using the above metal oxides can exhibit extremely low off-state currents of several yA / μm (current value per 1 μm of channel width). Furthermore, transistors using metal oxides have characteristics different from those of transistors using Si, such as the absence of impact ionization, avalanche breakdown, and short-channel effects, and can form highly reliable circuits. Furthermore, transistors using metal oxides are less susceptible to variations in electrical characteristics due to non-uniformity in crystallinity, which is a problem in transistors using Si.

[0210] The substrate temperature during deposition of the metal oxide film is preferably 350° C. or lower, more preferably room temperature or higher and 200° C. or lower, and even more preferably room temperature or higher and 130° C. If the substrate temperature during deposition of the metal oxide film is room temperature, productivity can be increased, which is preferable.

[0211] The metal oxide film can be formed by a sputtering method, a PLD method, a PECVD method, a thermal CVD method, an MOCVD method, an ALD method, a vacuum deposition method, or the like.

[0212] This concludes the explanation of metal oxides.

[0213] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0214] (Embodiment 2) In this embodiment, a pixel circuit included in a display device of one embodiment of the present invention will be described.

[0215] A pixel of a display device according to one embodiment of the present invention includes subpixels 11 and 12. A pixel circuit PIX1 of the subpixel 11 includes a light-emitting device that emits visible light. A pixel circuit PIX2 of the subpixel 12 includes a light-receiving device.

[0216] 15A shows an example of a pixel circuit PIX1 of the sub-pixel 11. The pixel circuit PIX1 includes a light-emitting device EL1, a transistor M1, a transistor M2, a transistor M3, and a capacitor C1. In this example, a light-emitting diode is used as the light-emitting device EL1. It is preferable to use an organic EL element that emits visible light as the light-emitting device EL1.

[0217] The transistor M1 has a gate electrically connected to a wiring G1, one of its source or drain electrically connected to a wiring S1, and the other of its source or drain electrically connected to one electrode of the capacitor C1 and the gate of the transistor M2. The transistor M2 has one of its source or drain electrically connected to a wiring V2, and the other electrically connected to the anode of the light-emitting device EL1 and one of the source or drain of the transistor M3. The transistor M3 has a gate electrically connected to a wiring G2, and the other of its source or drain electrically connected to a wiring V0. The cathode of the light-emitting device EL1 is electrically connected to the wiring V1.

[0218] A constant potential is supplied to the wiring V1 and the wiring V2. Light can be emitted by setting the anode side of the light-emitting device EL1 at a high potential and the cathode side at a low potential. The transistor M1 is controlled by a signal supplied to the wiring G1 and functions as a selection transistor for controlling the selection state of the pixel circuit PIX1. The transistor M2 also functions as a drive transistor that controls the current flowing through the light-emitting device EL1 according to the potential supplied to its gate.

[0219] When transistor M1 is in a conductive state, the potential supplied to wiring S1 is supplied to the gate of transistor M2, and the light emission brightness of light-emitting device EL1 can be controlled according to the potential. Transistor M3 is controlled by a signal supplied to wiring G2. This allows the potential between transistor M2 and light-emitting device EL1 to be reset to a constant potential supplied from wiring V0, and a potential can be written to the gate of transistor M2 while the source potential of transistor M2 is stabilized.

[0220] FIG. 15B shows an example of a pixel circuit PIX2 that is different from pixel circuit PIX1. Pixel circuit PIX2 has a boosting function. Pixel circuit PIX2 includes a light-emitting device EL2, transistors M4, M5, M6, M7, capacitors C2, and C3. Here, an example is shown in which a light-emitting diode is used as the light-emitting device EL2. Pixel circuit PIX2 can be used for all sub-pixels 11 (sub-pixel 11R, sub-pixel 11G, and sub-pixel 11B) of pixel 10. Alternatively, pixel circuit PIX2 may be used for any one or two of sub-pixels 11R, sub-pixel 11G, and sub-pixel 11B.

[0221] The transistor M4 has a gate electrically connected to the wiring G1, one of its source and drain electrically connected to the wiring S4, and the other of its source and drain electrically connected to one electrode of the capacitor C2, one electrode of the capacitor C3, and the gate of the transistor M6. The transistor M5 has a gate electrically connected to the wiring G3, one of its source and drain electrically connected to the wiring S5, and the other of its source and drain electrically connected to the other electrode of the capacitor C3.

[0222] One of the source and drain of transistor M6 is electrically connected to wiring V2, and the other is electrically connected to the anode of light-emitting device EL2 and one of the source and drain of transistor M7. Transistor M7 has a gate electrically connected to wiring G2 and the other of the source and drain electrically connected to wiring V0. The cathode of light-emitting device EL2 is electrically connected to wiring V1.

[0223] The transistor M4 is controlled by a signal supplied to the wiring G1, and the transistor M5 is controlled by a signal supplied to the wiring G3. The transistor M6 functions as a drive transistor that controls the current flowing through the light-emitting device EL2 in accordance with the potential supplied to its gate.

[0224] The light emission brightness of the light-emitting device EL2 can be controlled according to the potential supplied to the gate of the transistor M6. The transistor M7 is controlled by a signal supplied to the wiring G2. The potential between the transistor M6 and the light-emitting device EL2 can be reset to a constant potential supplied from the wiring V0, and a potential can be written to the gate of the transistor M6 while the source potential of the transistor M6 is stabilized. Furthermore, the light emission of the light-emitting device EL2 can be suppressed by setting the potential supplied from the wiring V0 to the same potential as or lower than the wiring V1.

[0225] The boosting function of the pixel circuit PIX2 will be described below.

[0226] First, the potential "D1" of the wiring S4 is supplied to the gate of the transistor M6 via the transistor M4, and at the same time, the reference potential "V ref At this time, the capacitor C3 is supplied with "D1-V ref Next, the gate of the transistor M6 is floated, and the potential "D2" of the wiring S5 is supplied to the other electrode of the capacitor C3 via the transistor M5. Here, the potential "D2" is a potential for addition.

[0227] At this time, the capacitance value of the capacitor C3 is C3, the capacitance value of the capacitor C2 is C2, and the capacitance value of the gate of the transistor M6 is C M6 Then, the potential of the gate of transistor M6 is D1+(C3 / (C3+C2+C M6 ))×(D2-V ref )) where the value of C3 is C2+C M6 Assuming that the value is sufficiently larger than the value of C3 / (C3+C2+C M6 ) is close to 1. Therefore, the potential of the gate of transistor M6 is "D1 + (D2 - V ref )” and D1=D2, and V ref If =0, then "D1+(D2-V ref ))”=“2D1”.

[0228] In other words, if the circuit is designed appropriately, a potential that is approximately twice the potential that can be input from the wiring S4 or S5 can be supplied to the gate of the transistor M6.

[0229] This effect allows a high voltage to be generated even when a general-purpose driver IC is used, thereby lowering the input voltage and reducing power consumption.

[0230] Alternatively, the pixel circuit PIX2 may have the configuration shown in Fig. 15C. The pixel circuit PIX2 shown in Fig. 15C differs from the pixel circuit PIX2 shown in Fig. 15B in that it includes a transistor M8. The gate of the transistor M8 is electrically connected to a wiring G1, and one of the source or the drain is electrically connected to the other of the source or the drain of the transistor M5 and the other electrode of the capacitor C3, and the other of the source or the drain is electrically connected to a wiring V0. Also, one of the source or the drain of the transistor M5 is connected to a wiring S4.

[0231] 15B, as described above, the pixel circuit PIX2 supplies the reference potential and the potential for addition to the other electrode of the capacitor C3 via the transistor M5. In this case, two lines S4 and S5 are required, and the reference potential and the potential for addition must be rewritten alternately on the line S5.

[0232] 15C, the number of transistors M8 is increased, but a dedicated path for supplying the reference potential is provided, allowing the wiring S5 to be reduced. Furthermore, the gate of transistor M8 can be connected to wiring G1, and wiring V0 can be used for supplying the reference potential, so the number of wirings connected to transistor M8 does not increase. Furthermore, since the reference potential and the potential for addition are not alternately rewritten on a single wiring, high-speed operation with low power consumption is possible.

[0233] In addition, in FIGS. 15B and 15C, the reference potential “V ref In this case, a potential approximately three times the potential that can be input from wiring S4 or S5 can be supplied to the gate of transistor M6. Note that the inverted potential means a potential whose absolute value of the difference from a certain reference potential is the same (or approximately the same) but which is different from the original potential. When the original potential is "D1", the inverted potential is "D1B", and the reference potential is V0, the relationship V0 = (D1 + D1B) / 2 should be satisfied.

[0234] In the display device of this embodiment, an image may be displayed by pulsating the light-emitting device. By shortening the driving time of the light-emitting device, it is possible to reduce the power consumption and heat generation of the display device. In particular, organic EL elements are suitable because of their excellent frequency characteristics. The frequency can be, for example, 1 kHz or more and 100 MHz or less.

[0235] 15D shows an example of a pixel circuit PIX3 of the subpixel 12. The pixel circuit PIX3 has a light receiving device PD, a transistor M9, a transistor M10, a transistor M11, a transistor M12, and a capacitor C4. Here, an example is shown in which a photodiode is used as the light receiving device PD.

[0236] The cathode of the light-receiving device PD is electrically connected to the wiring V1, and the anode is electrically connected to one of the source and drain of the transistor M9. The gate of the transistor M9 is electrically connected to the wiring G4, and the other of the source and drain is electrically connected to one electrode of the capacitor C4, one of the source and drain of the transistor M10, and the gate of the transistor M11. The gate of the transistor M10 is electrically connected to the wiring G5, and the other of the source and drain is electrically connected to the wiring V3. The source and drain of the transistor M11 is electrically connected to the wiring V4, and the other of the source and drain is electrically connected to one of the source and drain of the transistor M12. The gate of the transistor M12 is electrically connected to the wiring G6, and the other of the source and drain is electrically connected to the wiring OUT.

[0237] A constant potential is supplied to the wiring V1, wiring V3, and wiring V4. When the light-receiving device PD is driven with a reverse bias, a potential lower than the potential of the wiring V1 is supplied to the wiring V3. The transistor M10 is controlled by a signal supplied to the wiring G5 and has a function of resetting the potential of a node connected to the gate of the transistor M11 to the potential supplied to the wiring V3. The transistor M9 is controlled by a signal supplied to the wiring G4 and has a function of controlling the timing at which the potential of the node changes depending on the current flowing through the light-receiving device PD. The transistor M11 functions as an amplifying transistor that outputs a signal corresponding to the potential of the node. The transistor M12 is controlled by a signal supplied to the wiring G6 and functions as a selecting transistor that reads the output corresponding to the potential of the node to an external circuit connected to the wiring OUT.

[0238] Here, it is preferable that the transistors M1 to M12 included in the pixel circuits PIX1 to PIX3 be transistors using a metal oxide (oxide semiconductor) for a semiconductor layer in which a channel is formed.

[0239] A transistor using a metal oxide, which has a wider band gap and a lower carrier density than silicon, can achieve an extremely small off-state current, which allows charge stored in a capacitor connected in series with the transistor to be held for a long period of time.

[0240] Therefore, it is preferable to use transistors made of an oxide semiconductor for transistors M1, M4, M5, M8, M9, and M10, which have one or the other of their sources and drains connected to capacitors C1, C2, C3, and C4. By using transistors made of an oxide semiconductor for subpixels 12, it is possible to apply a global shutter system in which charge is accumulated simultaneously in all pixels without complicating the circuit configuration and operation method.

[0241] Similarly, when a transistor including an oxide semiconductor is used for other transistors, manufacturing costs can be reduced.

[0242] Alternatively, the transistors M1 to M12 may be transistors in which silicon is used as a semiconductor in which a channel is formed. In particular, using silicon with high crystallinity, such as single crystal silicon or polycrystalline silicon, is preferable because high field-effect mobility can be achieved and higher-speed operation is possible.

[0243] Alternatively, a structure may be used in which at least one of the transistors M1 to M12 includes an oxide semiconductor and the remaining transistors include silicon.

[0244] Although an example using n-channel transistors is shown in FIGS. 15A to 15D, p-channel transistors can also be used.

[0245] The transistors of pixel circuit PIX1, pixel circuit PIX2, and pixel circuit PIX3 are preferably formed side by side on the same substrate. Furthermore, among the wirings connected to pixel circuits PIX1 to PIX3, the wirings indicated by the same reference numerals in Figures 15A to 15D may be common wirings.

[0246] It is also preferable to provide one or more layers having transistors and / or capacitors at positions overlapping the light receiving device PD, the light emitting device EL1, or the light emitting device EL2, thereby reducing the effective area occupied by each pixel circuit and realizing a high-definition light receiving section or display section.

[0247] FIG. 16 is an example of a circuit diagram of the subpixels 11 (subpixels 11R, 11G, and 11B) and 12 included in the pixel 10. The wirings G1 and G2 can be electrically connected to a gate driver (circuit 16 in FIG. 3). The wirings G3 to G5 can be electrically connected to a row driver (circuit 18 in FIG. 3). The wirings S1 to S3 can be electrically connected to a source driver (circuit 15 in FIG. 3). The wiring OUT can be electrically connected to a column driver (circuit 17 in FIG. 3) and a readout circuit (circuit 19 in FIG. 3).

[0248] A power supply circuit that supplies a constant potential can be electrically connected to the wirings V0 to V4, and a low potential can be supplied to the wirings V0, V1, and V3, and a high potential can be supplied to the wirings V2 and V4. In this case, a potential lower than the potential supplied to the wiring V1 can be supplied to the wiring V3.

[0249] 17, the anode of the light receiving device PD of the subpixel 12 may be electrically connected to a wiring V1, and the other of the source and the drain of the transistor M10 may be electrically connected to a wiring V3. In this case, the wiring V3 may supply a potential higher than the potential supplied to the wiring V1.

[0250] In one embodiment of the present invention, the subpixels 11 and 12 can share a power supply line or the like.

[0251] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification. [Explanation of symbols]

[0252] C1: Capacitor, C2: Capacitor, C3: Capacitor, C4: Capacitor, G1: Wiring, G2: Wiring, G3: Wiring, G4: Wiring, G5: Wiring, G6: Wiring, M1: Transistor, M2: Transistor, M3: Transistor, M4: Transistor, M5: Transistor, M6: Transistor, M7: Transistor, M8: Transistor, M9: Transistor, M10: Transistor, M11: Transistor, M12: Transistor, PIX1: Pixel circuit, PIX2: Pixel circuit, PIX3: Pixel circuit, S1: Wiring, S3: Wiring, S4: Wiring, S5: Wiring , V0: Wiring, V1: Wiring, V2: Wiring, V3: Wiring, V4: Wiring, 10: Pixel, 11: Subpixel, 11B: Subpixel, 11G: Subpixel, 11R: Subpixel, 11W: Subpixel, 12: Subpixel, 14: Pixel array, 15: Circuit, 16: Circuit, 17: Circuit, 18: Circuit, 19: Circuit, 21: Light, 23c: Light, 23d: Reflected light, 30: Electronic device, 31: Display device, 32: Input device, 33: Input device, 41: Transistor, 42: Transistor, 50A: Display panel, 50B: Display panel, 50C: Display panel, 50D: Display panel, 50E: Display panel, 61: Display part, 62: icon, 63: pointer, 64: housing, 65: power button, 66: button, 67: speaker, 68: microphone, 69: camera, 71: light source, 72: button, 73: communication circuit, 74: light, 81: housing, 82: antenna, 83: battery, 84: light source, 85: finger, 86: light, 87: communication circuit, 88: power supply coil, 100A: display panel, 100B: display panel, 100C: display panel, 100D: display panel, 110: light receiving device, 111: pixel electrode, 112: common layer, 113: photoelectric conversion layer, 114: common layer, 115: common electrode, 142: adhesive layer, 143: space, 148: light-shielding layer, 149: filter, 151: substrate, 152: substrate, 153: substrate, 154: substrate, 155: adhesive layer, 162: display unit, 164a: circuit, 164b: circuit, 165: wiring, 165a: wiring, 165b: wiring, 166: conductive layer, 172a: FPC, 172b: FPC, 173a: IC, 173b: IC, 182: buffer layer, 184: buffer layer, 190: light-emitting device, 191: pixel electrode, 192: buffer layer, 193: light-emitting layer, 194: buffer layer, 195: protective layer, 195a: inorganic insulating layer, 195b: organic insulating layer,195c: inorganic insulating layer, 201: transistor, 204: connection portion, 205: transistor, 206: transistor, 208: transistor, 209: transistor, 210: transistor, 211: insulating layer, 212: insulating layer, 213: insulating layer, 214: insulating layer, 215: insulating layer, 216: partition wall, 217: partition wall, 218: insulating layer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 225: insulating layer, 228: region, 231: semiconductor layer, 231i: channel formation region, 231n: low resistance region, 242: connection layer,

Claims

1. An electronic device having a display device and an input device, the display device has a light-emitting device, a light-receiving device, and a power supply coil in a display unit; the input device has a ring-shaped housing, a light source, an antenna, and a battery; the input device has a function of receiving, via the antenna, radio waves transmitted from the power supply coil and charging the battery electrically connected to the light source; The electronic device changes the display unit when the light emitted from the light source is detected by the light receiving device.

2. In claim 1, the light-receiving device includes a first pixel electrode, a first common layer, a photoelectric conversion layer, a second common layer, and a common electrode; the light-emitting device comprises a second pixel electrode, the first common layer, a light-emitting layer, the second common layer, and the common electrode; the first pixel electrode and the second pixel electrode have a region in contact with an upper surface of an insulating layer; the first common layer has a region in contact with an upper surface of the first pixel electrode and a region in contact with an upper surface of the second pixel electrode; the photoelectric conversion layer has a region overlapping with the first pixel electrode via the first common layer, the light-emitting layer has a region overlapping with the second pixel electrode via the first common layer, the second common layer has a region in contact with an upper surface of the first common layer, a region in contact with an upper surface of the photoelectric conversion layer, and a region in contact with an upper surface of the light-emitting layer, the common electrode has the first common layer, the photoelectric conversion layer, and a region overlapping with the first pixel electrode via the second common layer, the first common layer, the light-emitting layer, and a region overlapping with the second pixel electrode via the second common layer, the photoelectric conversion layer includes a first organic compound, The light-emitting layer includes a second organic compound different from the first organic compound.

3. In claim 1 or 2, the light-emitting device has a function of emitting visible light, the light-receiving device has a function of detecting infrared light, The light source is an electronic device that has a function of emitting infrared light.

4. In any one of claims 1 to 3, The light receiving device is an electronic device that can detect light emitted from a position where the input device is not in contact with the display device.

Images