Semiconductor light-emitting device, illumination apparatus, and manufacturing method for semiconductor light-emitting device
By employing adhesive members with thickness gradients and inclined light-emitting elements, the semiconductor light-emitting device addresses positional accuracy issues, enhancing stability and uniformity.
Patent Information
- Application Number
- JP2024095355
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2024-06-12
- Publication Date
- 2025-12-24
AI Technical Summary
Existing semiconductor light-emitting devices face issues with variations in the positional accuracy of light-emitting elements due to adhesive thickness variations and mounting position inconsistencies, leading to color unevenness and instability.
A semiconductor light-emitting device design where the first and second adhesive members gradually decrease in thickness in a specific angle range relative to the alignment of the metal surfaces, with the light-emitting elements inclined downward in a predetermined direction, ensuring stable and accurate placement.
This design effectively suppresses variations in the arrangement position of light-emitting elements, improving uniformity and reducing color unevenness, resulting in a more stable and accurate semiconductor light-emitting device.
Smart Images
Figure 2025186897000001_ABST
Abstract
Description
[Technical Field]
[0001] The present disclosure relates to a semiconductor light emitting device, a lighting device, and a method for manufacturing a semiconductor light emitting device. [Background technology]
[0002] An example is known in which a plurality of flip-chip type light-emitting elements are mounted on a substrate and a wavelength conversion member is provided thereon (for example, Patent Document 1). Semiconductor light-emitting devices that convert the wavelength of part of the light output from a plurality of light-emitting elements using a phosphor and output light that is a combination of the light from the light-emitting elements and the light from the phosphor are used as light sources for general lighting, street lights, headlamps, etc. [Prior art documents] [Patent documents]
[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-216615 Summary of the Invention [Problem to be solved by the invention]
[0004] The light-emitting element is mounted on the substrate via an adhesive material such as solder, but there have been problems such as variations in the positional accuracy of the light-emitting surface due to variations in the thickness of the adhesive material on the top surface (flat surface) of the substrate and variations in the mounting position of the light-emitting element, and color unevenness depending on the emission angle.
[0005] Therefore, the present disclosure aims to provide a semiconductor light-emitting device that can suppress variation in the placement position (accuracy) of light-emitting elements, and a method for manufacturing a semiconductor light-emitting device that can suppress variation in the placement position (accuracy) of light-emitting elements. [Means for solving the problem]
[0006] The present disclosure has been made to achieve the above-mentioned object, and provides a semiconductor light-emitting device comprising: a substrate having a first metal surface and a second metal surface exposed side by side on its surface; a first adhesive member provided on the first metal surface and a second adhesive member provided on the second metal surface; and a light-emitting element having a first electrode and a second electrode, wherein the first metal surface and the first electrode are connected via the first adhesive member, and the second metal surface and the second electrode are connected via the second adhesive member, and the first adhesive member and the second adhesive member gradually decrease in thickness in a second direction that is at an angle of 45 degrees or more and 135 degrees or less relative to a first direction in which the first metal surface and the second metal surface are aligned, and the light-emitting element is arranged such that its upper surface is inclined downward in the second direction relative to the surface of the substrate.
[0007] According to such a semiconductor light emitting device, variations in the arrangement position (accuracy) of the light emitting elements are suppressed.
[0008] In this case, the semiconductor light-emitting device can include multiple sets of the first adhesive member and the second adhesive member and multiple light-emitting elements, wherein the multiple sets of the first adhesive member and the second adhesive member have thicknesses that gradually decrease in the second direction, and the multiple light-emitting elements are arranged such that the upper surfaces of the multiple light-emitting elements are inclined downward in the second direction relative to the surface of the substrate.
[0009] This reduces variations in the arrangement of the plurality of light emitting elements.
[0010] In this case, the semiconductor light emitting device may be one in which the amount of the first adhesive member and the amount of the second adhesive member are substantially equal.
[0011] This allows for higher accuracy in arranging the light emitting elements.
[0012] In this case, the semiconductor light emitting device may be such that the inclination angle of the upper surface of the light emitting element relative to the surface of the substrate is 1 to 10 degrees.
[0013] This allows for more stable and accurate placement of the light emitting elements.
[0014] In this case, the semiconductor light emitting device can include a wavelength conversion member provided on the upper surface of the light emitting element to convert the wavelength of light emitted from the light emitting element, and a reflective member provided on the side of the light emitting element and the side of the wavelength conversion member to reflect light.
[0015] This allows the semiconductor light emitting device according to the present disclosure to have even better light emitting properties.
[0016] In this case, the semiconductor light emitting device may be such that the length of the first metal surface and the second metal surface extending in the second direction is longer than the width in the first direction.
[0017] This allows the surface of the light emitting element to be easily and stably made gently inclined.
[0018] In this case, the semiconductor light-emitting device can be one in which the ends of the first electrode and the second electrode of the light-emitting element in the second direction are at the same position as the ends of the first metal surface and the second metal surface in the second direction.
[0019] This allows for more stable and accurate placement of the light emitting elements.
[0020] In this case, a lighting device can be provided that includes the semiconductor light emitting device described above.
[0021] This results in a lighting device with higher characteristics such as illuminance.
[0022] The present disclosure also provides a method for manufacturing a semiconductor light emitting device, the method including: an adhesive member placement step of placing a first adhesive member and a second adhesive member, respectively, on a first metal surface and a second metal surface exposed side by side on the surface of a substrate; a light emitting element placement step of placing the first electrode of a light emitting element having a first electrode and a second electrode on the first adhesive member and the second electrode on the second adhesive member, thereby placing the light emitting element on the substrate; and a fixing step of fixing the first electrode to the first metal surface, and the second electrode to the second metal surface, respectively, with the first adhesive member and the second adhesive member, wherein the thickness of the first adhesive member and the second adhesive member gradually decreases toward a second direction that is at an angle of 45 degrees or more and 135 degrees or less with respect to a first direction in which the first metal surface and the second metal surface are aligned, and the light emitting element is arranged so that the upper surface of the light emitting element is inclined downward in the second direction relative to the surface of the substrate.
[0023] According to such a method for manufacturing a semiconductor light emitting device, it is possible to suppress variations in the arrangement position (accuracy) of the light emitting elements.
[0024] In this case, the method for manufacturing a semiconductor light emitting device may be such that in the fixing step, the reflow is performed with the substrate tilted downward toward the second direction with respect to a horizontal plane.
[0025] This makes it possible to easily suppress variations in the arrangement position (accuracy) of the light emitting elements.
[0026] In this case, the method for manufacturing a semiconductor light-emitting device can be such that in the light-emitting element mounting process, the center of the light-emitting element is positioned away from the line connecting the center of the first metal surface and the center of the second metal surface toward the second direction.
[0027] This makes it possible to easily and stably suppress variations in the arrangement position (accuracy) of the light emitting elements.
[0028] In this case, the method for manufacturing a semiconductor light-emitting device can be such that the ends of the first electrode and the second electrode of the light-emitting element in the second direction are positioned so as to overlap with the ends of the first metal surface and the second metal surface in the second direction.
[0029] This makes it possible to stably suppress variations in the arrangement position (accuracy) of the light emitting elements. [Effects of the Invention]
[0030] As described above, according to the semiconductor light emitting device of the present disclosure, variations in the arrangement position (accuracy) of the light emitting element are suppressed. According to the manufacturing method of the semiconductor light emitting device of the present disclosure, it is possible to manufacture a semiconductor light emitting device while suppressing variations in the arrangement position (accuracy) of the light emitting element. [Brief explanation of the drawings]
[0031] [Figure 1] 1 shows a first embodiment (perspective view) of a semiconductor light emitting device according to the present disclosure. [Figure 2] 1 shows a cross-sectional view of a first embodiment of a semiconductor light emitting device according to the present disclosure. [Figure 3] 2 is a diagram illustrating the positional relationship of each component of the semiconductor light emitting device according to the present disclosure. [Figure 4] 1 shows a second embodiment (cross-sectional view) of a semiconductor light emitting device according to the present disclosure. [Figure 5] 1 is a diagram illustrating a preferred example of the arrangement position of a light-emitting element in a semiconductor light-emitting device according to the present disclosure. [Figure 6] 1 is a diagram illustrating a method for manufacturing a semiconductor light emitting device according to the present disclosure. [Figure 7] 10 is a diagram illustrating a preferred example of a mounting position of a light-emitting element in a light-emitting element mounting step. [Figure 8] 1 shows an example (cross-sectional view) of a semiconductor light emitting device according to the prior art. DETAILED DESCRIPTION OF THE INVENTION
[0032] The present disclosure will be described in detail below, but the present disclosure is not limited thereto.
[0033] As described above, there has been a demand for a semiconductor light emitting device capable of suppressing variations in the arrangement position (accuracy) of light emitting elements, and a method for manufacturing a semiconductor light emitting device capable of suppressing variations in the arrangement position (accuracy) of light emitting elements.
[0034] As a result of extensive research into the above-mentioned problems, the inventors have discovered that a semiconductor light-emitting device comprising: a substrate having a first metal surface and a second metal surface exposed side by side on its surface; a first adhesive member provided on the first metal surface and a second adhesive member provided on the second metal surface; and a light-emitting element having a first electrode and a second electrode, wherein the first metal surface and the first electrode are connected via the first adhesive member and the second metal surface and the second electrode are connected via the second adhesive member, wherein the first adhesive member and the second adhesive member gradually decrease in thickness in a second direction that is at an angle of 45 degrees or more and 135 degrees or less with respect to a first direction in which the first metal surface and the second metal surface are aligned; and wherein the light-emitting element is arranged with its upper surface inclined downward in the second direction relative to the surface of the substrate, suppresses variation in the positioning position (accuracy) of the light-emitting element, and has completed the present disclosure.
[0035] The inventors have also discovered that a manufacturing method for a semiconductor light emitting device can suppress variation in the placement position (accuracy) of a light emitting element, the manufacturing method including: an adhesive member placement step of placing a first adhesive member and a second adhesive member, respectively, on a first metal surface and a second metal surface exposed side by side on the surface of a substrate; a light emitting element placement step of placing the first electrode of a light emitting element having a first electrode and a second electrode on the first adhesive member and the second electrode on the second adhesive member, thereby placing the light emitting element on the substrate; and a fixing step of fixing the first electrode to the first metal surface and the second electrode to the second metal surface with the first adhesive member and the second adhesive member, respectively, wherein the thicknesses of the first adhesive member and the second adhesive member gradually decrease toward a second direction that is at an angle of 45 degrees or more and 135 degrees or less with respect to a first direction in which the first metal surface and the second metal surface are aligned, and the light emitting element is arranged so that the upper surface of the light emitting element is inclined downward in the second direction with respect to the surface of the substrate, and thus completed the present disclosure.
[0036] The following description will be made with reference to the drawings.
[0037] [Semiconductor light-emitting device] (First embodiment) First, a semiconductor light emitting device according to the present disclosure will be described. Figures 1 and 2 show a first embodiment of a semiconductor light emitting device according to the present disclosure. Figure 1 shows a perspective view of an example of a semiconductor light emitting device 100.
[0038] FIG. 2 shows a cross-sectional view of the semiconductor light-emitting device 100. FIG. 2(A) shows a cross-sectional view taken along a plane parallel to the second direction D2, including the first metal surface 2A, the first adhesive member 3A, and the first electrode 4A. FIG. 2(B) shows a cross-sectional view taken along line ab in FIG. 2(A), which is a cross-sectional view parallel to the first direction D1 in FIG. 1. Note that FIGS. 1 and 2 show an example in which the second direction D2 is at an angle of 90 degrees to the first direction D1. The first direction D1 and the second direction D2 will be described later.
[0039] Moreover, an example of the positional relationship of each component of the semiconductor light emitting device according to the present disclosure is shown in Fig. 3. Fig. 3 shows the positional relationship of the outer edges of each component when the semiconductor light emitting device according to the present disclosure is viewed from above.
[0040] A semiconductor light emitting device 100 according to the present disclosure includes a substrate 1 having a first metal surface 2A and a second metal surface 2B exposed side by side on its surface, a first adhesive member 3A provided on the first metal surface 2A and a second adhesive member 3B provided on the second metal surface 2B, and a light emitting element 5 having a first electrode 4A and a second electrode 4B on the surface side of the substrate 1. The first metal surface 2A and the first electrode 4A are connected via the first adhesive member 3A, and the second metal surface 2B and the second electrode 4B are connected via the second adhesive member 3B.
[0041] Here, the direction in which the first metal surface 2A and the second metal surface 2B are aligned is defined as a first direction D1 as shown in Figure 1 and Figure 2(B). Also, the direction in the range of 45 degrees or more and 135 degrees or less with respect to the first direction D1 is defined as a second direction D2 as shown in Figure 1. The angle range of the second direction D2 is preferably 60 degrees or more and 120 degrees or less, more preferably 80 degrees or more and 100 degrees or less, and even more preferably 85 degrees or more and 95 degrees or less.
[0042] In the semiconductor light-emitting device according to the present disclosure, the first adhesive member 3A and the second adhesive member 3B have thicknesses that gradually decrease in the second direction D2. The light-emitting element 5 is disposed such that the upper surface of the light-emitting element 5 is inclined downward in the second direction D2 relative to the surface of the substrate 1.
[0043] Here, the phrase "the top surface of the light-emitting element 5 is inclined downward in the second direction D2" means that the direction in which the top surface of the light-emitting element 5 is inclined downward in the second direction D2 is the direction in which the angle of inclination of the top surface of the light-emitting element 5 is greatest. Regarding the second direction D2, which is a direction between 45 degrees and 135 degrees with respect to the first direction D1, considering the angle (orientation), there are two possible directions for the second direction D2. Depending on the angle (orientation), the top surface of the light-emitting element may be arranged with an upward inclination toward the second direction D2. However, this is merely a difference in the setting of the "second direction D2," and is equivalent to "the thickness gradually decreasing toward the second direction" in the present disclosure, and is included in "the top surface of the light-emitting element is arranged with an upward inclination in the second direction relative to the surface of the substrate" in the present disclosure. The same applies to the expression "the thickness gradually decreasing toward the second direction" of the first adhesive member and the second adhesive member.
[0044] If the angle of the downward tilt is θ (°), then the vertical angle of the top surface of the light-emitting element 5 also tilts by θ (°) from vertically upward in the second direction D2, as shown in Fig. 1. Fig. 3 shows that the vertical direction (black dots) of the top surface (light emission surface) of the light-emitting element 5 tilts in the direction of the arrow parallel to the second direction D2.
[0045] In the past, when light-emitting elements were placed on a substrate via first and second adhesive members without being intentionally tilted, the light-emitting elements were unstable on the adhesive members, and the light-emitting elements were sometimes fixed while tilted in various directions during the process of fixing the light-emitting elements, etc. This caused problems such as uneven color due to differences in the placement position of the light-emitting elements.
[0046] On the other hand, in the semiconductor device of the present disclosure, the light-emitting elements are intentionally arranged tilted in a predetermined direction (second direction D2), so that errors (deviations) and variations from the designed arrangement positions are kept small, and variations in the arrangement positions (accuracy) of the light-emitting elements are suppressed. In particular, variations in the second direction D2 can be effectively suppressed. As a result, effects such as improved uniformity and suppression of color unevenness due to differences in the arrangement positions of the light-emitting elements can be obtained. For this, please also refer to the explanation of FIG. 4 relating to the second embodiment and FIG. 8 relating to the conventional technology, which will be described later.
[0047] (Second embodiment) FIG. 4 illustrates a second embodiment of a semiconductor light-emitting device according to the present disclosure. FIG. 4 is a cross-sectional view of a semiconductor light-emitting device cut along a plane parallel to the second direction D2 and including the first metal surface 2A, the first adhesive member 3A, and the first electrode 4A. A semiconductor light-emitting device 200 according to the second embodiment of the present disclosure includes multiple pairs of first adhesive members 3A and second adhesive members 3B and multiple light-emitting elements 5. The thicknesses of the multiple pairs of first adhesive members 3A and second adhesive members 3B gradually decrease in the second direction D2, and the multiple light-emitting elements 5 are arranged such that the upper surfaces of the multiple light-emitting elements 5 are inclined downward in the second direction D2 relative to the surface of the substrate 1. In other words, the semiconductor light-emitting device according to the second embodiment of the present disclosure is the semiconductor light-emitting device according to the first embodiment described above, except that the multiple light-emitting elements 5 are arranged with an inclination toward the same second direction D2.
[0048] In such a semiconductor light emitting device, variations in the arrangement of the plurality of light emitting elements 5 are suppressed. Therefore, variations in the positional accuracy of the plurality of light emitting elements 5 are suppressed, and problems such as color unevenness due to the emission angle are also effectively suppressed. Note that while Fig. 4 shows a configuration in which a plurality of semiconductor elements 5 are arranged on the first metal surface 2A, it is also possible to provide a plurality of pairs of first metal surface 2A and second metal surface 2B, and to arrange a light emitting element 5 on each pair of first metal surface 2A and second metal surface 2B.
[0049] In the conventional case where multiple light-emitting elements are arranged on a substrate via first and second adhesive members without intentionally tilting them, the light-emitting elements are unstable on the adhesive members, and the light-emitting elements are fixed tilted in various directions during the process of fixing the light-emitting elements, which can result in variations in the tilt direction, as shown in semiconductor light-emitting device 300 in Figure 8. While Figure 8 shows variations in tilt in the left-right direction (second direction D2), in reality, variations in tilt occur in all directions other than second direction D2. As a result, the center positions C1, C2, and C3 of light-emitting element 5 are shifted, which can cause variations in the spacing between light-emitting elements (e.g., the distances between C1 and C2 and C2 and C3) as shown in Figure 8, or color unevenness due to differences in emission angle.
[0050] On the other hand, in the semiconductor device of the second embodiment, the plurality of light-emitting elements are intentionally arranged tilted in a predetermined direction (second direction D2), so that the error (deviation) and variation from the designed arrangement position are kept small, and the variation in the arrangement position (accuracy) of the light-emitting elements is suppressed. As a result, effects such as improved uniformity and suppression of color unevenness can be obtained.
[0051] Also, as shown in Figures 4 and 8, the reflecting member 7 provided between the light-emitting elements typically has a shape that is higher on the side of the wavelength conversion member 6 where the surface of the light-emitting element 5 is higher than on the side where the surface of the light-emitting element 5 is lower. When multiple light-emitting elements are arranged, conventionally, the inclination of the light-emitting elements 5 varies in various directions as shown in Figure 8, and therefore the location where the reflecting member 7 protrudes varies from light-emitting element to light-emitting element. On the other hand, in the present disclosure, as shown in Figure 4, the location where the reflecting member 7 protrudes is aligned with respect to the light-emitting elements, making it easier to manage the prevention of the reflecting member 7 climbing up onto the wavelength conversion member 6 and to check the quality.
[0052] Next, matters common to the first and second embodiments will be described in detail.
[0053] As shown in Figure 1, the inclination angle θ of the upper surface of the light-emitting element 5 relative to the surface of the substrate 1 is not particularly limited, but is preferably 1 to 10 degrees (1 to 10 degrees).Within this range of inclination angle, the light-emitting element can be more stably positioned and the accuracy of positioning the light-emitting element can be increased while stably maintaining the light-emitting characteristics of the semiconductor light-emitting device.The inclination angle is more preferably 2 to 5 degrees (2 to 5 degrees).
[0054] 5, it is preferable that the ends 51 in the second direction D2 of the first electrode 4A and the second electrode 4B of the light-emitting element 5 are located at the same positions as the ends 21 in the second direction of the first metal surface 2A and the second metal surface 2B. In this case, the light-emitting element can be more stably arranged with high accuracy.
[0055] (wavelength conversion material, reflective material) The semiconductor light emitting device according to the present disclosure can include a wavelength conversion member 6 provided on the upper surface of the light emitting element 5 for converting the wavelength of light emitted from the light emitting element, and a reflective member 7 provided on the side surface of the light emitting element 5 and the side surface of the wavelength conversion member for reflecting light. By forming the reflective member 7 to a position higher than the light emitting functional layer of the light emitting element 5, it can also effectively reflect light emitted laterally from the light emitting functional layer. In the semiconductor light emitting device according to the present disclosure, the light emitting element and the wavelength conversion member are inclined in a predetermined direction (second direction), and variation is suppressed, which effectively prevents the reflective member from climbing up onto the light emitting element or the wavelength conversion member (light emitting surface), resulting in a semiconductor light emitting device with better light emission characteristics.
[0056] The wavelength conversion member 6 converts the wavelength of the light emitted from the light emitting element 5. For example, it may be a layer of a translucent member containing a phosphor. An adhesive layer may be provided between the light emitting element 5 and the wavelength conversion member 6 to fix the wavelength conversion member 6 to the light emitting element 5.
[0057] The reflective member 7 is provided on the side surface of the light emitting element 5 and the side surface of the wavelength converting member 6 to protect the light emitting element 5. The reflective member 7 may be, for example, a molded resin containing particles such as titanium oxide that reflect light emitted from the light emitting element 5.
[0058] (substrate) There is no particular limitation on the substrate 1. Examples include a ceramic substrate such as an alumina substrate, and a resin substrate such as a glass epoxy substrate.
[0059] (First and second metal surfaces) The first metal surface 2A and the second metal surface 2B are exposed on the substrate and are connected to the first electrode and the second electrode of the light-emitting element 5. There are no particular limitations on the first metal surface and the second metal surface as long as they are exposed on the substrate. The first metal surface and the second metal surface may be, for example, part or all of a Cu wiring pattern provided on the substrate. Usually, the Cu surface is flux-treated to increase wettability, but in the present disclosure, it is also preferable to leave the Cu surface unplated and leave it in a state with reduced wettability. This is because tilted arrangement can be performed more stably.
[0060] The first metal surface and the second metal surface may be formed in the shape of a substantially rectangular island. Preferably, the length of the first metal surface and the second metal surface extending in the second direction D2 is longer than the width in the first direction D1. In such a case, the length of the metal surface in the second direction in which the thickness of the first and second adhesive members changes is long, so that the slope of the surface of the light-emitting element can be easily and stably made gentle. Furthermore, it is also preferable that the areas of the first metal surface and the second metal surface are substantially equal.
[0061] (First and second adhesive members) The first adhesive member 3A connects and fixes the first metal surface 2A and the first electrode 4A. Similarly, the second adhesive member 3B connects and fixes the second metal surface 2B and the second electrode 4B. Such adhesive members are not particularly limited as long as they can connect the metal surfaces and the electrodes. For example, solder can be used. Specifically, Sn-containing solder can be used.
[0062] In the semiconductor light emitting device according to the present disclosure, it is preferable that the amount of the first adhesive member and the amount of the second adhesive member are substantially equal, which allows the light emitting element to be more stably tilted toward the predetermined direction (second direction D2).
[0063] (light-emitting element) The light emitting element 5 applicable to the light emitting device according to the present disclosure is not particularly limited as long as it is a light emitting element including a first electrode and a second electrode. For example, a blue light emitting diode including a nitride semiconductor (GaN)-based light emitting layer can be used.
[0064] [Lighting equipment] According to the present disclosure, it is possible to provide a lighting device including a semiconductor light emitting device. The lighting device is not particularly limited, and examples thereof include general lighting, street lighting, and headlamps.
[0065] [Method of manufacturing semiconductor light-emitting device] Next, a method for manufacturing a semiconductor light-emitting device according to the present disclosure will be described with reference to Fig. 6. The flow on the left side of Fig. 6 shows a cross-sectional view taken along a plane parallel to the second direction D2 and including the first metal surface 2A, the first adhesive member 3A, and the first electrode 4A. The flow on the right side of Fig. 6 shows a side view taken along a plane parallel to the first direction D1.
[0066] The method for manufacturing a semiconductor light-emitting device according to the present disclosure includes an adhesive member placement process for placing a first adhesive member 3A and a second adhesive member 3B on a first metal surface 2A and a second metal surface 2B exposed next to each other on the surface of a substrate 1, respectively; a light-emitting element placement process for placing a first electrode 4A of a light-emitting element 5 having a first electrode 4A and a second electrode 4B on the first adhesive member 3A and the second electrode 4B on the second adhesive member 3B, thereby placing the light-emitting element 5 on the substrate 1; and a fixing process for fixing the first electrode 4A and the first metal surface 2A, and the second electrode 4B and the second metal surface 2B, respectively, with the first adhesive member 3A and the second adhesive member 3B. The light emitting element is provided such that the thicknesses of the first adhesive member 3A and the second adhesive member 3B gradually decrease in a second direction D2 that is a direction that is at least 45 degrees and not more than 135 degrees relative to a first direction D1 in which the first metal surface 2A and the second metal surface 2B are aligned, and the upper surface of the light emitting element 5 is inclined downward in the second direction D2 relative to the surface of the substrate 1. This method for manufacturing a semiconductor light emitting device can suppress variations in the arrangement position (accuracy) of the light emitting element.
[0067] At this time, it is preferable to adjust the mounting position of the light-emitting element 5 in the light-emitting element mounting step so that the ends 51 in the second direction D2 of the first electrode 4A and the second electrode 4B of the light-emitting element 5 overlap with the ends 21 in the second direction D2 of the first metal surface 2A and the second metal surface 2B, as shown in Fig. 5. This makes it possible to stably suppress variations in the arrangement position (accuracy) of the light-emitting element.
[0068] (Adhesive member placement process) 6(A), the method for placing the first adhesive member and the second adhesive member on the first metal surface and the second metal surface, respectively, is not particularly limited, and an appropriate method can be adopted depending on the material of the adhesive member.
[0069] (Light emitting element mounting process) In the light-emitting element placement step of Figure 6(B), the first electrode 4A of the light-emitting element having a first electrode 4A and a second electrode 4B is placed on the first adhesive member 3A, and the second electrode 4B is placed on the second adhesive member 3B, and the light-emitting element 5 is placed on the substrate 1.
[0070] 7, it is preferable to mount the light-emitting element 5 so that the center C of the light-emitting element 5 is located in a position away from the line connecting the center H of the first metal surface 2A and the center of the second metal surface 2B (not shown) in the second direction D2. By mounting the light-emitting element so that the center of gravity of the light-emitting element is shifted in the tilt direction of the light-emitting element from the center of gravity of the metal surface, the light-emitting element can be stably positioned at an incline, and as a result, variations in the position (accuracy) of the light-emitting element can be easily and stably suppressed.
[0071] (Fixing process) To achieve the thicknesses of the first adhesive member 3A and the second adhesive member 3B and the arrangement of the light-emitting element 5 as described above, it is preferable to perform reflow in the fixing step while tilting the substrate 1 downward in the second direction D2 relative to the horizontal plane, as shown in Figures 6(C)-(D). By tilting the substrate in this way and lowering the light-emitting element from the adhesive member in the second direction D2 to tilt the light-emitting element, it is possible to easily suppress variations in the arrangement position (accuracy) of the light-emitting element. This is particularly preferable because it can be performed easily without adding any new processes.
[0072] 7, it is more preferable to perform reflow while tilting the substrate 1 downward in the second direction D2 with respect to the horizontal plane as shown in FIGS. 6(C)-(D). This allows for an easy and stable tilted arrangement of the light-emitting element.
[0073] (others) After the fixing step, as shown in Fig. 6(E), a wavelength conversion member 6 that converts the wavelength of light emitted from the light emitting element can be provided on the upper surface of the light emitting element 5. Thereafter, a reflective member 7 that reflects light can be provided on the side surfaces of the light emitting element 5 and the wavelength conversion member, thereby fabricating a semiconductor light emitting device as shown in Figs.
[0074] As described above, according to the semiconductor light emitting device of the present disclosure, variations in the arrangement position (accuracy) of the light emitting element are suppressed. According to the manufacturing method of the semiconductor light emitting device of the present disclosure, variations in the arrangement position (accuracy) of the light emitting element can be suppressed.
[0075] The present specification includes the following aspects. [1]: A substrate having a first metal surface and a second metal surface exposed side by side on its surface; a first adhesive member provided on the first metal surface and a second adhesive member provided on the second metal surface; a light-emitting element including a first electrode and a second electrode; Equipped with a semiconductor light emitting device in which the first metal surface and the first electrode are connected via the first adhesive member, and the second metal surface and the second electrode are connected via the second adhesive member, the first adhesive member and the second adhesive member have thicknesses that gradually decrease in a second direction that is a direction that is 45 degrees or more and 135 degrees or less with respect to a first direction in which the first metal surface and the second metal surface are aligned, The light-emitting element is disposed such that the upper surface of the light-emitting element is inclined downward in the second direction relative to the surface of the substrate. [2]: A plurality of pairs of the first adhesive member and the second adhesive member; a plurality of the light-emitting elements; the plurality of sets of the first adhesive members and the second adhesive members have thicknesses that gradually decrease in the second direction; The semiconductor light emitting device according to [1] above, wherein the plurality of light emitting elements are arranged such that the upper surfaces of the plurality of light emitting elements are inclined downward in the second direction relative to the surface of the substrate. [3]: The semiconductor light emitting device according to [1] or [2] above, wherein the amount of the first adhesive member and the amount of the second adhesive member are substantially equal. [4]: The semiconductor light emitting device according to [1], [2] or [3] above, wherein the inclination angle of the upper surface of the light emitting element relative to the surface of the substrate is 1 to 10 degrees. [5]: a wavelength conversion member provided on an upper surface of the light emitting element for converting the wavelength of light emitted from the light emitting element; The semiconductor light emitting device according to [1], [2], [3] or [4], further comprising a reflective member that reflects light and is provided on a side surface of the light emitting element and a side surface of the wavelength conversion member. [6]: The semiconductor light-emitting device of [1], [2], [3], [4] or [5], wherein the length of the first metal surface and the second metal surface extending in the second direction is longer than the width in the first direction. [7]: A semiconductor light-emitting device according to [1], [2], [3], [4], [5] or [6], wherein the ends of the first electrode and the second electrode of the light-emitting element in the second direction are at the same position as the ends of the first metal surface and the second metal surface in the second direction. [8]: A lighting device comprising the semiconductor light emitting device according to [1], [2], [3], [4], [5], [6] or [7]. [9]: an adhesive member arranging step of arranging a first adhesive member and a second adhesive member on a first metal surface and a second metal surface exposed side by side on the surface of the substrate, respectively; a light-emitting element mounting step of mounting a light-emitting element having a first electrode and a second electrode on the substrate by mounting the first electrode on the first adhesive member and the second electrode on the second adhesive member; a bonding step of bonding the first electrode and the first metal surface, and the second electrode and the second metal surface, respectively, with the first adhesive member and the second adhesive member; the thickness of the first adhesive member and the second adhesive member gradually decreases in a second direction that is a direction that is 45 degrees or more and 135 degrees or less with respect to a first direction in which the first metal surface and the second metal surface are aligned, A method for manufacturing a semiconductor light emitting device, wherein the light emitting element is provided so that an upper surface of the light emitting element is inclined downward in the second direction relative to the surface of the substrate.
[10] : The method for manufacturing a semiconductor light emitting device according to [9] above, wherein in the fixing step, the reflow is performed with the substrate tilted downward toward the second direction with respect to a horizontal plane.
[11] : A method for manufacturing a semiconductor light-emitting device according to [9] or
[10] , wherein in the light-emitting element mounting step, the light-emitting element is mounted so that its center is located away from the line connecting the center of the first metal surface and the center of the second metal surface toward the second direction.
[12] : A method for manufacturing a semiconductor light-emitting device according to [9],
[10] or
[11] , wherein the ends of the first electrode and the second electrode of the light-emitting element in the second direction are positioned so as to overlap the ends of the first metal surface and the second metal surface in the second direction.
[0076] The present disclosure is not limited to the above-described embodiments. The above-described embodiments are merely examples, and any configuration that is substantially identical to the technical idea described in the claims of the present disclosure and that provides similar effects is included within the technical scope of the present disclosure. [Explanation of symbols]
[0077] 1...Substrate, 2A...First metal surface, 2B...Second metal surface, 3A...first adhesive member, 3B...second adhesive member, 4A...first electrode, 4B...second electrode, 5...light-emitting element, 6... wavelength conversion member, 7... reflective member, 21...end of the metal surface on the second direction side, 51...end of the electrode of the light-emitting element on the second direction side, 100, 200, 300...Semiconductor light-emitting devices. D1...first direction, D2...second direction, C, C1, C2, C3...center of light-emitting element, H...Center of the first metal surface.
Claims
1. a substrate having a first metal surface and a second metal surface exposed side by side on a surface thereof; a first adhesive member provided on the first metal surface and a second adhesive member provided on the second metal surface; a light-emitting element including a first electrode and a second electrode; Equipped with a semiconductor light emitting device in which the first metal surface and the first electrode are connected via the first adhesive member, and the second metal surface and the second electrode are connected via the second adhesive member, the first adhesive member and the second adhesive member have thicknesses that gradually decrease in a second direction that is a direction that is 45 degrees or more and 135 degrees or less with respect to a first direction in which the first metal surface and the second metal surface are aligned, The semiconductor light emitting device is characterized in that the light emitting element is disposed such that an upper surface of the light emitting element is inclined downward in the second direction relative to the surface of the substrate.
2. a plurality of pairs of the first adhesive member and the second adhesive member; a plurality of the light-emitting elements; the plurality of sets of the first adhesive members and the second adhesive members have thicknesses that gradually decrease in the second direction; 2. The semiconductor light emitting device according to claim 1, wherein the plurality of light emitting elements are arranged such that the upper surfaces of the plurality of light emitting elements are inclined downward in the second direction relative to the surface of the substrate.
3. 2. The semiconductor light emitting device according to claim 1, wherein the amount of the first adhesive material is approximately equal to the amount of the second adhesive material.
4. 2. The semiconductor light emitting device according to claim 1, wherein the inclination angle of the upper surface of the light emitting element relative to the surface of the substrate is 1 to 10 degrees.
5. a wavelength conversion member provided on an upper surface of the light emitting element for converting the wavelength of light emitted from the light emitting element; 2. The semiconductor light emitting device according to claim 1, further comprising a reflecting member for reflecting light, the reflecting member being provided on a side surface of the light emitting element and a side surface of the wavelength converting member.
6. 2. The semiconductor light emitting device according to claim 1, wherein the first metal surface and the second metal surface have a length extending in the second direction that is longer than a width in the first direction.
7. 2. The semiconductor light-emitting device according to claim 1, wherein the ends of the first electrode and the second electrode of the light-emitting element in the second direction are located at the same position as the ends of the first metal surface and the second metal surface in the second direction.
8. A lighting device comprising the semiconductor light emitting device according to claim 1 .
9. an adhesive member arranging step of arranging a first adhesive member and a second adhesive member on a first metal surface and a second metal surface exposed side by side on the surface of the substrate, respectively; a light-emitting element mounting step of mounting the light-emitting element, which includes a first electrode and a second electrode, on the first adhesive member and the second electrode on the second adhesive member, thereby mounting the light-emitting element on the substrate; a bonding step of bonding the first electrode and the first metal surface, and the second electrode and the second metal surface, respectively, with the first adhesive member and the second adhesive member; the thickness of the first adhesive member and the second adhesive member gradually decreases in a second direction that is a direction that is 45 degrees or more and 135 degrees or less with respect to a first direction in which the first metal surface and the second metal surface are aligned, a light emitting element provided on the substrate such that an upper surface of the light emitting element is inclined downward in the second direction relative to the surface of the substrate;
10. 10. The method for manufacturing a semiconductor light emitting device according to claim 9, wherein in the fixing step, the reflow is performed with the substrate tilted downward toward the second direction with respect to a horizontal plane.
11. 10. A method for manufacturing a semiconductor light-emitting device as described in claim 9, characterized in that in the light-emitting element mounting process, the light-emitting element is mounted so that its center is located away from the line connecting the center of the first metal surface and the center of the second metal surface toward the second direction.
12. A method for manufacturing a semiconductor light-emitting device described in any one of claims 9 to 11, characterized in that the ends of the first electrode and the second electrode of the light-emitting element in the second direction are positioned so as to overlap with the ends of the first metal surface and the second metal surface in the second direction.
Citation Information
Patent Citations
Method of mounting electronic component, circuit board, and image formation device
JP2014216615A