Display with built-in two-dimension photosensor and method for manufacturing display with built-in two-dimension photosensor

Abstract

To provide a display incorporating a two-dimension photosensor based on the structure of a thin film transistor for a display.SOLUTION: The display 100 with a built-in two-dimension photosensor includes a photosensing unit 102 disposed in a two-dimension and a display unit 101, the photosensing unit 102 includes a photodiode 200 and a photosensor driving unit 300, the display unit 101 includes a display device 420 and a display device driving unit 400, the photodiode 200 forms a Schottky diode type photodiode 200 between a photosensor bottom terminal 202 and a photosensor first transparent terminal 208, the photosensor driving unit 300 includes a photosensor driving unit gate terminal 302a, and the display device driving unit 400 includes a display device driving unit first gate terminal 402a. The photosensor bottom electrodes 202, the photosensor-driver-portion gate electrodes 302a, and the display-element-driver-portion first gate electrodes 402a are formed of the same layer.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present invention relates to a display with a built-in two-dimensional photosensor and a method for manufacturing a display with a built-in two-dimensional photosensor. [Background technology]

[0002] Two-dimensional photosensors have traditionally been used in imaging devices, fingerprint authentication devices, and the like. A two-dimensional photosensor has photodiodes that are sensitive to light. A plurality of photodiodes are arranged vertically and horizontally. The photodiodes are, for example, PIN-type semiconductor elements such as solar cells. The semiconductor layer is, for example, an amorphous silicon (hereinafter, a-Si) layer. An example of applying a two-dimensional photosensor to a fingerprint sensor is disclosed in Patent Document 1 listed below. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2017-194676 Summary of the Invention [Problem to be solved by the invention]

[0004] Patent Document 1 discloses an optical fingerprint sensor. Optical fingerprint sensors use reflected light to read high-resolution fingerprint patterns on a small area the size of a fingertip. The configuration used in fingerprint sensors is not suitable for detecting the distribution of ambient light over an area larger than the fingerprint area. For example, detecting the distribution of ambient light over the entire display surface is an example. Assume that the display is a thin-film transistor (TFT) display, such as a liquid crystal display or an organic electroluminescence (EL) display. TFT displays do not use the pin-in (PIN) coupling used in fingerprint sensors. Applying the fingerprint sensor configuration to a TFT display requires the addition of a semiconductor layer, which is not an inherent component and constitutes a pin-in (PIN) coupling, over the entire display surface. However, it is difficult to uniformly distribute pin-in (PIN) amorphous silicon (a-Si) photodiodes (PDs) over the large display surface.

[0005] PIN-type a-Si photodiodes are not suitable for manufacturing in TFT display factories. There is a need for 2D photosensors that are based on the structure of TFT displays, are highly compatible with the manufacturing processes of TFT display factories, and can be easily shared among processes. In particular, there is a need for TFT displays with built-in 2D photosensors.

[0006] An object of the present invention is to provide a display incorporating a two-dimensional photosensor based on the structure of a thin film transistor for a display, and a method for manufacturing the display. [Means for solving the problem]

[0007] (1) A two-dimensional photosensor-embedded display includes a glass substrate, a photosensing section arranged two-dimensionally on the glass substrate, and a display section, wherein the photosensing section has a photodiode that generates a current based on external light, and the display section has a display element that switches the display by applying a voltage or current, and a display element driver that transmits a voltage or current to the display element based on a display signal, and the photodiode has a photosensor bottom electrode, a photosensor semiconductor layer, a photosensor ohmic contact layer, and a photosensor transparent electrode, and the photosensor bottom electrode and the photosensor A Schottky diode-type photodiode is formed between the photosensor bottom electrode and the photosensor transparent electrode based on a Schottky barrier portion at the interface with the semiconductor layer or at the interface between the photosensor semiconductor layer and the photosensor transparent electrode, and the display element driver has a display element driver thin film transistor, and the display element driver thin film transistor has a display element driver gate electrode, a display element driver interlayer insulating film, a display element driver semiconductor layer, a display element driver source electrode, and a display element driver drain electrode, and the photosensor bottom electrode and the display element driver gate electrode are formed in the same layer. (2) In the two-dimensional photosensor-embedded display of (1), the photosensing unit further includes a photosensor driving unit that reads out signals from the photodiodes, and the photosensor driving unit includes a photosensor driving unit thin-film transistor. The photosensor driving unit thin-film transistor includes a photosensor driving unit gate electrode, a photosensor driving unit interlayer insulating film, a photosensor driving unit semiconductor layer, a photosensor driving unit source electrode, and a photosensor driving unit drain electrode, and the photosensor bottom electrode, the photosensor driving unit gate electrode, and the display element driving unit gate electrode are configured in the same layer.

[0008] (3) A two-dimensional photosensor-embedded display includes a glass substrate, a photosensing section arranged two-dimensionally on the glass substrate, and a display section, the photosensing section having a photodiode that generates a current based on external light, the display section having a display element that switches the display by applying a voltage or current, and a display element driving section that transmits a voltage or current to the display element based on a display signal, the photodiode having a photosensor bottom electrode, a photosensor semiconductor layer, a photosensor ohmic contact layer, and a photosensor transparent electrode arranged on the glass substrate side, Based on a Schottky barrier at the interface with the conductor layer or at the interface between the photosensor semiconductor layer and the photosensor transparent electrode, a Schottky diode-type photodiode is formed between the photosensor bottom electrode and the photosensor transparent electrode, and the display element driver has a display element driver thin film transistor, and the display element driver thin film transistor has a display element driver gate electrode, a display element driver interlayer insulating film, a display element driver semiconductor layer, a display element driver source electrode, and a display element driver drain electrode, and the photosensor bottom electrode, the display element driver source electrode, and the display element driver drain electrode are formed in the same layer.

[0009] (4) In the two-dimensional photosensor-embedded display of (3), the photosensing unit further includes a photosensor driving unit that reads out signals from the photodiodes, and the photosensor driving unit includes a photosensor driving unit thin-film transistor. The photosensor driving unit thin-film transistor includes a photosensor driving unit gate electrode, a photosensor driving unit interlayer insulating film, a photosensor driving unit semiconductor layer, a photosensor driving unit source electrode, and a photosensor driving unit drain electrode, and the photosensor bottom electrode, the photosensor driving unit source electrode, the photosensor driving unit drain electrode, the display element driving unit source electrode, and the display element driving unit drain electrode are configured in the same layer.

[0010] (5) A method for manufacturing a two-dimensional display with an integrated photosensor includes a glass substrate, a photosensing unit arranged two-dimensionally on the glass substrate, and a display unit, the photosensing unit having a photodiode that generates a current based on external light, the display unit having a display element that switches its display by application of a voltage or current, and a display element driving unit that transmits a voltage or current to the display element based on a display signal, the photodiode having a photosensor bottom electrode, a photosensor semiconductor layer, a photosensor ohmic contact layer, and a photosensor transparent electrode, and a Schottky diode type photodiode is formed between the photosensor bottom electrode and the photosensor transparent electrode based on a Schottky barrier portion at the interface between the photosensor bottom electrode and the photosensor semiconductor layer or at the interface between the photosensor semiconductor layer and the photosensor transparent electrode, and the photosensor bottom electrode and the display element driving unit gate electrode are simultaneously formed.

[0011] (6) In the manufacturing method of the two-dimensional photosensor-embedded display of (5), the photosensing unit further includes a photosensor driving unit that reads out signals from the photodiode, and the photosensor driving unit includes a photosensor driving unit thin-film transistor, and the photosensor driving unit thin-film transistor includes a photosensor driving unit gate electrode, a photosensor driving unit interlayer insulating film, a photosensor driving unit semiconductor layer, a photosensor driving unit source electrode, and a photosensor driving unit drain electrode, and the photosensor bottom electrode, the photosensor driving unit gate electrode, and the display element driving unit gate electrode are simultaneously formed.

[0012] (7) A method for manufacturing a two-dimensional photosensor-embedded display includes a glass substrate, a photosensing section arranged two-dimensionally on the glass substrate, and a display section, the photosensing section having a photodiode that generates a current based on external light, the display section having a display element that switches the display by applying a voltage or a current, and a display element driving section that transmits a voltage or a current to the display element based on a display signal, the photodiode having a photosensor bottom electrode, a photosensor semiconductor layer, a photosensor ohmic contact layer, and a photosensor transparent electrode arranged on the glass substrate side, A Schottky diode-type photodiode is formed between the photosensor bottom electrode and the photosensor transparent electrode based on a Schottky barrier at the interface between the bottom electrode and the photosensor semiconductor layer or at the interface between the photosensor semiconductor layer and the photosensor transparent electrode, and the display element driver has a display element driver thin film transistor, and the display element driver thin film transistor has a display element driver gate electrode, a display element driver interlayer insulating film, a display element driver semiconductor layer, a display element driver source electrode, and a display element driver drain electrode, and the photosensor bottom electrode, the display element driver source electrode, and the display element driver drain electrode are formed simultaneously.

[0013] (8) In the manufacturing method of the two-dimensional photosensor-embedded display of (7), the photosensing unit further has a photosensor driving unit that reads out signals from the photodiode, and the photosensor driving unit has a photosensor driving unit thin-film transistor, and the photosensor driving unit thin-film transistor has a photosensor driving unit gate electrode, a photosensor driving unit interlayer insulating film, a photosensor driving unit semiconductor layer, a photosensor driving unit source electrode, and a photosensor driving unit drain electrode, and the photosensor bottom electrode, the photosensor driving unit source electrode, the photosensor driving unit drain electrode, the display element driving unit source electrode, and the display element driving unit drain electrode are simultaneously formed. [Effects of the Invention]

[0014] The present invention provides a display incorporating a two-dimensional photosensor based on the structure of a thin film transistor for a display, and a method for manufacturing the display. [Brief explanation of the drawings]

[0015] [Figure 1] 1 is an overall circuit diagram of a display according to a first embodiment of the present invention. [Figure 2] FIG. 3 is a diagram showing an example of the characteristics of the photodiode according to the first embodiment of the present invention. [Figure 3] 2 is a schematic diagram showing an output signal from a photosensor gate driver, an output signal from a signal processing circuit, and an input signal to the signal processing circuit according to the first embodiment of the present invention. FIG. [Figure 4] FIG. 1 is a plan view of a pixel according to a first embodiment of the present invention. [Figure 5] FIG. 1 is a cross-sectional view of a pixel according to a first embodiment of the present invention. [Figure 6] FIG. 2 is a cross-sectional view of a pixel according to the first embodiment of the present invention in one manufacturing step. [Figure 7] FIG. 2 is a cross-sectional view of a pixel according to the first embodiment of the present invention in one manufacturing step. [Figure 8] FIG. 2 is a cross-sectional view of a pixel according to the first embodiment of the present invention in one manufacturing step. [Figure 9] FIG. 2 is a cross-sectional view of a pixel according to the first embodiment of the present invention in one manufacturing step. [Figure 10] FIG. 2 is a cross-sectional view of a pixel according to the first embodiment of the present invention in one manufacturing step. [Figure 11] FIG. 2 is a cross-sectional view of a pixel according to the first embodiment of the present invention in one manufacturing step. [Figure 12] FIG. 2 is a cross-sectional view of a pixel according to the first embodiment of the present invention in one manufacturing step. [Figure 13] FIG. 2 is a cross-sectional view of a pixel according to the first embodiment of the present invention in one manufacturing step. [Figure 14] FIG. 2 is a cross-sectional view of a pixel according to the first embodiment of the present invention in one manufacturing step. [Figure 15]FIG. 2 is a cross-sectional view of a pixel according to the first embodiment of the present invention in one manufacturing step. [Figure 16] FIG. 10 is a plan view of a pixel according to Modification 1 of the present invention. [Figure 17] FIG. 10 is a cross-sectional view of a pixel according to Modification 1 of the present invention. [Figure 18] FIG. 10 is a plan view of a pixel according to a second embodiment of the present invention. [Figure 19] FIG. 10 is a cross-sectional view of a pixel according to a second embodiment of the present invention. [Figure 20] FIG. 10 is a cross-sectional view of a pixel according to a second embodiment of the present invention in a manufacturing process. [Figure 21] FIG. 10 is a cross-sectional view of a pixel according to a second embodiment of the present invention in a manufacturing process. [Figure 22] FIG. 10 is a cross-sectional view of a pixel according to a second embodiment of the present invention in a manufacturing process. [Figure 23] FIG. 10 is a cross-sectional view of a pixel according to a second embodiment of the present invention in a manufacturing process. [Figure 24] FIG. 10 is a cross-sectional view of a pixel according to a second embodiment of the present invention in a manufacturing process. [Figure 25] FIG. 10 is a cross-sectional view of a pixel according to a second embodiment of the present invention in a manufacturing process. [Figure 26] FIG. 10 is a cross-sectional view of a pixel according to a second embodiment of the present invention in a manufacturing process. [Figure 27] FIG. 10 is a circuit schematic diagram of a photosensing section according to a third embodiment of the present invention. [Figure 28] FIG. 10 is a plan view of a pixel according to a third embodiment of the present invention. [Figure 29] FIG. 10 is a cross-sectional view of a pixel according to a third embodiment of the present invention. [Figure 30] FIG. 10 is a circuit schematic diagram of a photosensing section according to Modification 3 of the present invention. [Figure 31] FIG. 10 is a plan view of a pixel according to a third modified example of the present invention. [Figure 32] FIG. 10 is a cross-sectional view of a pixel according to a third modified example of the present invention. [Figure 33] FIG. 10 is a circuit schematic diagram of a photosensing section according to a fourth embodiment of the present invention. [Figure 34] FIG. 10 is a plan view of a pixel according to a fourth embodiment of the present invention. [Figure 35] FIG. 10 is a cross-sectional view of a pixel according to a fourth embodiment of the present invention. [Figure 36] FIG. 10 is a plan view of a pixel according to a fifth embodiment of the present invention. [Figure 37] FIG. 10 is a cross-sectional view of a pixel according to a fifth embodiment of the present invention. [Figure 38] FIG. 10 is a plan view of a pixel according to a fourth modified example of the present invention. [Figure 39] FIG. 10 is a cross-sectional view of a pixel according to a fourth modified example of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0016] Hereinafter, a display 100 with a built-in two-dimensional photosensor according to a first embodiment of the present invention will be described with reference to the drawings. In each drawing, the same components are given the same reference numerals. When the same components are to be distinguished as a first component, a second component, etc., a, b, etc. are added to the reference numeral.

[0017] (Embodiment 1) 1 is an overall circuit diagram of a two-dimensional photosensor-embedded display 100 according to a first embodiment of the present invention. The two-dimensional photosensor-embedded display 100 includes a display unit 101, a two-dimensionally arranged photosensing unit 102, a photosensor gate driver 130, a multiplexer 140, a signal processing circuit 150, and a display unit source driver 170. The display unit 101 includes a display element 420 and a display element driving unit 400. The photosensing unit 102 includes a photodiode 200 and a photosensor driving unit 300.

[0018] The photodiode 200 receives external light L and outputs a current. The photosensor driver 300 has a photosensor driver thin-film transistor 301. The photosensor gate driver 130 has gate signal output terminals. The gate signal output terminals are connected to a plurality of photosensor driver scanning electrodes 302, respectively. The photosensor driver scanning electrodes 302 sequentially transmit signals from the photosensor gate driver 130 to the photosensor driver 300. One end of the photodiode 200, which functions as an anode electrode, is connected to a reference voltage unit Va, and the other end, which functions as a cathode electrode, is connected to the photosensor driver 300. The photosensor driver 300 receives a signal from the photosensor gate driver 130 and reads out the photocurrent of the photodiode 200. The photosensor driver 300 transmits the read photocurrent of the photodiode 200 to a photosensor driver signal readout electrode 303. The photosensor driving unit signal readout electrodes 303 transmit the transmitted photocurrent to the multiplexer 140. The multiplexer 140 sequentially transmits signals from the multiple photosensor driving unit signal readout electrodes 303 to the signal processing circuit 150. The signal processing circuit 150 processes the photocurrent output from the photodiode 200 as a signal. If the photocurrent is large, the signal processing circuit 150 determines that light has been irradiated, and calculates the incident light intensity based on the amount of photocurrent.

[0019] The photosensor gate driver 130 sequentially outputs voltages to the photosensor driver scanning electrodes 302. That is, the photosensor driver scanning electrodes 302 are scanned. In response to the scanning, the photosensor driver units 300 operate sequentially. A plurality of photosensor driver units 300 are connected to the photosensor driver scanning electrodes 302. As the photosensor driver scanning electrodes 302 are sequentially scanned, the photocurrents of the two-dimensionally arranged photodiodes 200 are sequentially transmitted to the signal processing circuit 150. The photocurrents of the photodiodes 200 are then transmitted to the signal processing circuit 150 over the entire surface on which the photodiodes 200 are arranged. The signal from the signal processing circuit 150 is digitized by an analog-to-digital converter (not shown) and connected to a central processing unit. The central processing unit calculates the two-dimensional distribution of incident light intensity based on the information obtained from the signal processing circuit 150.

[0020] The display unit 101 has, for example, a liquid crystal element as the display element 420. The display element 420 can be an organic EL, inorganic EL, LED, or the like. In this embodiment, an example of a liquid crystal element, particularly an FFS (Fringe Field Switching) type, is shown. The display unit 101 has a display element drive thin film transistor 401. A display unit gate driver 160 scans a display element drive scanning electrode 402. The selected display element drive scanning electrode 402 turns the display element drive thin film transistor 401 to the ON state. The display element drive thin film transistor 401 in the ON state transmits a signal from the display unit source driver 170 to the display element 420. If the display element 420 is a liquid crystal element, a voltage is applied to realize a predetermined display.

[0021] FIG. 2 is a diagram showing an example of the characteristics of a photodiode 200. The structure will be described in detail later, but the photodiode 200 according to this embodiment is a Schottky diode type photodiode 200. The horizontal axis represents the voltage applied to the photodiode 200. The positive direction of the horizontal axis represents a state in which a voltage is applied to the photodiode 200 in the forward direction. The negative direction of the horizontal axis represents a state in which a voltage is applied to the photodiode 200 in the reverse direction. The vertical axis represents the photocurrent output by the photodiode 200, measured in amperes. The illuminance of external light L irradiating the photodiode 200 was varied from 0 lux to 7006 lux. The experimental results for an illuminance of 0 lux represent the results of an experiment conducted in a darkroom.

[0022] Referring to the data in the darkroom, when a voltage is applied in the forward direction, the current increases. This indicates that a current flows from the photodiode 200. When a voltage is applied in the reverse direction, i.e., when a voltage is applied in the negative direction on the horizontal axis in Figure 2, only a minute current called a dark current flows until the voltage drops below -4V.

[0023] Next, let's look at the data when external light L is irradiated and the illuminance varies from 1802 lux to 7006 lux. When a forward voltage is applied, the current increases. In other words, it shows that a current flows from the photodiode 200. This is similar to the data when the illuminance is 0 or in a dark room. When a voltage is applied in the reverse direction, that is, when a voltage is applied in the negative direction on the horizontal axis in Figure 2, a current flows, as shown in Figure 2. The higher the illuminance, the larger the current that flows. For example, when an applied voltage of -2V is used, when the illuminance is 0 lux, the current is very small, almost 0 amperes, and when the illuminance is 1802 lux, the current is approximately 0.8 x 10 -9 Ampere, if the illuminance is 3672 lux, it is equivalent to 2 x 10 -9 Ampere, illuminance 7006 lux, equivalent to 3.9 x 10 -9 An ampere of photocurrent flows.

[0024] FIG. 3 is a schematic diagram showing the output signal and reset signal from the photosensor gate driver 130, and the output voltage of the signal processing circuit 150. The horizontal axis represents time. FIG. 3(a) shows the output voltage from the photosensor gate driver 130 to the photosensor drive unit scanning electrode 302 in the nth row. FIG. 3(b) shows the output voltage from the photosensor gate driver 130 to the photosensor drive unit scanning electrode 302 in the (n+1)th row. FIG. 3(c) shows the reset state of the reset switch 152 of the signal processing circuit 150 in the mth column. FIG. 3(d) shows the output voltage Vout of the signal processing circuit 150 based on the photodiode 200 in the mth column and nth row.

[0025] When the photosensor driver scanning electrode 302 in the nth row is scanned, an ON voltage (e.g., +15 V) is applied to the photosensor driver scanning electrode 302 in the nth row at time t1, as shown in FIG. 3(a). When an ON voltage is applied to the photosensor driver scanning electrode 302 shown in FIG. 1, the gate of the photosensor driver thin film transistor 301 opens, and the source-drain electrode of the photosensor driver thin film transistor 301 becomes conductive. That is, the switch of the photosensor driver thin film transistor 301 functions as a switch and becomes ON. At this time, an OFF voltage (e.g., −5 V) is applied to the photosensor driver scanning electrode 302n+1 in the n+1th row, as shown in FIG. 3(b).

[0026] As shown in FIG. 1, the signal processing circuit 150 has an operational amplifier 151. The signal processing circuit 150 applies a reference voltage (see FIG. 1, Vref, for example, +1.5 V) to the photosensor driving unit signal readout electrode 303 via the operational amplifier 151. At time t1, as shown in FIG. 3(c), the reset switch 152 of the signal processing circuit 150 is turned on. Then, the operational amplifier 151 is reset. As shown in FIG. 3(d), the detection voltage of the signal processing circuit 150 decreases from time t1 to time t2. That is, the voltage based on the photodiode 200 is reset. The time between time t1 and time t2 is, for example, 160 microseconds. At time t2, as shown in FIG. 3(c), the reset switch 152 of the signal processing circuit 150 is turned off. At this time, the reference voltage is applied to the photodiode 200 as a reverse bias voltage. As shown in FIG. 3(a), an ON voltage is applied to the n-th row of photosensor driver scanning electrodes 302 until time t3. Then, a photocurrent flows through the photodiode 200 due to external light L, causing the voltage of the photosensor driver signal readout electrode 303 to decrease. Due to the operation of the operational amplifier 151 of the signal processing circuit 150, the output voltage (Vout) of the signal processing circuit 150 gradually increases from time t2 to time t3, as shown in FIG. 3(d). At time t3, an OFF voltage is applied to the n-th row of photosensor driver scanning electrodes 302, as shown in FIG. 3(a). The output voltage (Vout) of the signal processing circuit 150 reaches a maximum at time t3, as shown in FIG. 3(d). The voltage at time t3 is detected by the signal processing circuit 150 as a voltage representing the intensity of light incident on the photodiode 200.

[0027] At time t4, an ON voltage is applied to the photosensor drive unit scanning electrode 302 in the (n+1)th row. Similarly, the intensity of light incident on the photodiode 200 in the (n+1)th row and beyond is detected. The above scanning is performed from the first row to the last row, and after the last row, the scanning returns to the first row. Based on the photocurrent of the photodiode 200, the intensity of incident light is detected from the first column to the last column of the first row, and further to the last column of the last row. That is, the intensity of incident light is detected in a two-dimensional plane.

[0028] The operation of the display 100 with built-in two-dimensional photosensors according to this embodiment has been described above as the operation of an electronic circuit. The structure of the display 100 with built-in two-dimensional photosensors according to this embodiment will now be described.

[0029] Fig. 4 is a plan view of the pixel unit 103 shown in Fig. 1. Fig. 5 is a cross-sectional view of the pixel unit 103 taken along line II shown in Fig. 4. The pixel unit 103 has a photodiode 200, a photosensor driving unit 300, a display element driving unit 400, and a display element 420.

[0030] The photodiode 200 has a photosensor bottom electrode 202, a photosensor semiconductor layer 205, and a photosensor first transparent electrode 208. The photosensor driver thin film transistor 301 has a photosensor driver first gate electrode 302a, a photosensor driver interlayer insulating film 304, a photosensor driver semiconductor layer 305, a photosensor driver source electrode 303a, and a photosensor driver drain electrode 303c.

[0031] The photosensor bottom electrode 202 extends linearly in the left-right direction of the two-dimensional photosensor-embedded display 100. The photosensor bottom electrode 202 is connected to a reference voltage unit Va shown in FIG. 1 but not shown in FIG. 4. The photosensor bottom electrode 202 extends vertically in the two-dimensional photosensor-embedded display 100, expanding into a rectangular shape. A photosensor semiconductor layer 205 is formed in an island shape on the photosensor bottom electrode 202. A photosensor ohmic contact layer 206 (not shown in FIG. 4) is formed in an island shape so as to cover the photosensor semiconductor layer 205. A photosensor first insulating film 204 (not shown in FIG. 4) is arranged so as to cover the glass substrate 1a and part of the photosensor ohmic contact layer 206. A photosensor first transparent electrode 208 is arranged in a planar shape and in contact with the photosensor ohmic contact layer 206.

[0032] As shown in FIG. 1 , the photosensor driver scanning electrodes 302 extend, for example, in the left-right direction of the two-dimensional photosensor-embedded display 100. The photosensor driver scanning electrodes 302 have extending portions in a two-dimensional plane. The photosensor driver thin-film transistor 301 has the extending portions of the photosensor driver scanning electrodes 302 as photosensor driver first gate electrodes 302a. The photosensor driver thin-film transistor 301 has a planar photosensor driver interlayer insulating film 304 on the photosensor driver first gate electrodes 302a. The photosensor driver thin-film transistor 301 has a photosensor driver semiconductor layer 305 on the photosensor driver interlayer insulating film 304. The photosensor driver semiconductor layer 305 is island-shaped. The photosensor driver thin-film transistor 301 may have an ohmic contact layer on the photosensor driver semiconductor layer 305. The photosensor driver thin film transistor 301 has a photosensor driver source electrode 303a and a photosensor driver drain electrode 303c. The photosensor driver signal readout electrode 303 has a branch-like extension portion. The extension portion of the photosensor driver signal readout electrode 303 forms the photosensor driver source electrode 303a of the photosensor driver thin film transistor 301. The photosensor driver drain electrode 303c is electrically connected to the photosensor first transparent electrode 208 of the photodiode 200. When a predetermined voltage, for example, 15 V, is applied to the photosensor driver first gate electrode 302a, the photosensor driver source electrode 303a and the photosensor driver drain electrode 303c are connected to each other. The photosensor driver thin film transistor 301 functions as a switch.

[0033] The display element driver 400 has a display element driver thin film transistor 401. The display element driver thin film transistor 401 has a display element driver scanning electrode 402, a display element driver first gate electrode 402a, a display element driver signal electrode 403, a display element driver source electrode 403a, a display element driver drain electrode 403c, a display element driver interlayer insulating film 404, a display element driver semiconductor layer 405, and a display element driver final protective film 410.

[0034] The display element 420 has a display element driver contact hole CH1, a display element comb electrode 421, and a liquid crystal layer 422 not shown in FIG. 4 but shown in FIG.

[0035] The display element driver scanning electrode 402 extends, for example, in the left-right direction, with a portion thereof extending, for example, downward to form the display element driver first gate electrode 402a. A display element driver interlayer insulating film 404 is disposed on the display element driver first gate electrode 402a. The display element driver signal electrode 403 extends, for example, in the up-down direction, with a portion thereof extending, for example, to the right to form the display element driver source electrode 403a. In addition, in the same layer, a display element driver drain electrode 403c is disposed opposite the display element driver source electrode 403a with the display element driver first gate electrode 402a sandwiched therebetween. A display element driver semiconductor layer 405 is disposed on the display element driver first gate electrode 402a, spanning the display element driver source electrode 403a and the display element driver drain electrode 403c.

[0036] The display element driver drain transparent electrode 403d is electrically connected to the display element comb electrode 421 through a display element driver contact hole CH1.

[0037] A scanning voltage is applied to the display element driver scanning electrode 402 from the display element gate driver 160 shown in FIG. 1. The scanning voltage is applied to the display element driver first gate electrode 402a. The display element driver thin film transistor 401 is turned on. A display signal is applied to the display element driver source electrode 403a from the display element source driver 170 shown in FIG. 1. Because the display element driver thin film transistor 401 is turned on, a voltage is transmitted from the display element driver source electrode 403a to the display element driver drain electrode 403c. Furthermore, the voltage is applied to the display element comb electrode 421 through the display element driver contact hole CH1. An electric field is applied from the display element comb electrode 421 to the liquid crystal layer 422 (not shown in FIG. 4). As a result, the display state of the display element 420 is controlled.

[0038] Fig. 5 is a cross-sectional view of the pixel section 103 taken along line II in Fig. 4. The pixel section 103 has a photodiode 200, a photosensor driving section 300, a display element driving section 400, and a display element 420.

[0039] First, the photodiode 200 will be described. The photodiode 200 is disposed on a glass substrate 1a. The glass substrate 1a may be a film substrate. The photodiode 200 includes a photosensor bottom electrode 202, a photosensor semiconductor layer 205, a photosensor ohmic contact layer 206, a photosensor first insulating film 204, a photosensor first transparent electrode 208, and a photosensor second transparent electrode 209. Constituent layers not shown in FIG. 4 are shown in FIG. 5.

[0040] The glass substrate 1a is, for example, alkali-free glass, such as borosilicate glass. The glass substrate 1a has a thickness of, for example, 0.5 to 0.7 mm. The photosensor bottom electrode 202 is disposed on the glass substrate 1a. The photosensor bottom electrode 202 has, for example, a substantially rectangular shape as shown in FIG. 4. The photosensor bottom electrode 202 is, for example, an alloy of molybdenum and tantalum. Other examples include low-resistance metals such as aluminum (Al) and copper (Cu). The photosensor bottom electrode 202 has a thickness of, for example, 200 nm.

[0041] A photosensor semiconductor layer 205 is disposed on the photosensor bottom electrode 202. The photosensor semiconductor layer 205 has a substantially rectangular shape, for example, as shown in FIG. 4 . The photosensor semiconductor layer 205 is, for example, an amorphous silicon layer. The photosensor semiconductor layer 205 has a thickness of, for example, 200 nm. A photosensor ohmic contact layer 206 is disposed on the photosensor semiconductor layer 205. The photosensor ohmic contact layer 206 is, for example, an n+ amorphous silicon layer. The n+ amorphous silicon layer has a thickness of, for example, 50 nm. A photosensor first transparent electrode 208 is disposed to cover the photosensor ohmic contact layer 206.

[0042] The photosensor first transparent electrode 208 is, for example, a film of an oxide of an alloy of indium and titanium (ITO). In addition to ITO, examples of transparent electrodes include an oxide of an alloy of indium and zinc (IZO) and an oxide of aluminum and zinc (AlZn oxide). The photosensor first transparent electrode 208 has a thickness of, for example, 100 nm. The photosensor first transparent electrode 208 and the photosensor ohmic contact layer 206 are in contact with each other and electrically connected.

[0043] The photosensor first insulating film 204 is disposed on the photosensor first transparent electrode 208. A portion of the photosensor first insulating film 204 is removed and not disposed at the position of the photosensor first insulating film removal portion RM1. The photosensor second transparent electrode 209 is disposed on the photosensor first insulating film 204 and the photosensor first transparent electrode 208. The photosensor second transparent electrode 209 is disposed so as to cover the photosensor first insulating film removal portion RM1. Although the manufacturing method will be described later, when the photosensor first insulating film 204 is patterned, the photosensor first transparent electrode 208 below serves as a stopper, so there is a low possibility that the photosensor ohmic contact layer 206 will be patterned.

[0044] The photosensor first insulating film 204 is, for example, a silicon nitride (SiN) film and has a thickness of, for example, 400 nm.

[0045] A Schottky barrier portion S is formed between the photosensor bottom electrode 202 and the photosensor semiconductor layer 205. Meanwhile, due to the presence of the photosensor ohmic contact layer 206, the photosensor first transparent electrode 208, the photosensor ohmic contact layer 206, and the photosensor semiconductor layer 205 are in ohmic contact with each other, and no Schottky barrier is formed. The photosensor bottom electrode 202, the photosensor semiconductor layer 205, the photosensor ohmic contact layer 206, and the photosensor first transparent electrode 208 constitute a Schottky diode. A Schottky diode with a forward direction from the photosensor bottom electrode 202 to the photosensor first transparent electrode 208 is realized. A Schottky diode type photosensor with a forward direction from the photosensor bottom electrode 202 to the photosensor first transparent electrode 208 is realized.

[0046] The Schottky barrier S occurs at the interface between the photosensor bottom electrode 202 and the photosensor semiconductor layer 205. Therefore, the thickness of the photosensor semiconductor layer 205 does not affect the formation of the Schottky barrier. This allows the photosensor semiconductor layer 205 to be thin. In this embodiment, for example, an amorphous silicon layer with a thickness of 200 nm is disposed. The thickness of the amorphous silicon layer is preferably 50 nm to 500 nm. If a PIN-type diode is used instead of a Schottky diode, the amorphous silicon layer would be thick, for example, about 1-2 microns. This would prevent light from passing through the amorphous silicon layer. The photosensor semiconductor layer 205 made of amorphous silicon according to the present invention is thin, at 200 nm, allowing external light L to pass through. The external light L reaches the Schottky barrier S over the entire surface of the photosensor semiconductor layer 205 made of amorphous silicon. A photodiode 200 with a wide light receiving area can be realized with a simple configuration. In a Schottky diode, a thick amorphous silicon layer increases resistance and reduces photocurrent. On the other hand, if the amorphous silicon layer is too thin, the electric field in the Schottky barrier will be concentrated, increasing the leakage current. The thickness of the amorphous silicon layer is determined taking these factors into consideration.

[0047] In this embodiment, external light L is incident from the side where the photosensor first transparent electrode 208 is disposed. The photosensor first transparent electrode 208 and the photosensor first insulating film 204 have high light transmittance. The external light L passes through the photosensor first transparent electrode 208 and the photosensor first insulating film 204. The external light L is incident on the interface between the photosensor semiconductor layer 205 and the photosensor bottom electrode 202, where a Schottky barrier is present. The external light L is absorbed by the photosensor semiconductor layer 205. Then, the charge carrier pairs in the Schottky barrier are released. The free charge carriers provide a photocurrent.

[0048] Next, the photosensor driver 300 will be described with reference to FIGS. 4 and 5. As shown in FIG. 4, the photosensor driver 300 has a photosensor driver thin-film transistor 301 and a photosensor driver signal readout electrode 303. As shown in FIGS. 4 and / or 5, the photosensor driver thin-film transistor 301 has a photosensor driver first gate electrode 302a, a photosensor driver interlayer insulating film 304, a photosensor driver semiconductor layer 305, a photosensor driver source / drain transparent electrode 303t, a photosensor driver second interlayer insulating film 307, a photosensor driver second gate electrode 308, a photosensor driver second gate transparent electrode 309, and a photosensor driver final protective film 310.

[0049] The photosensor driving section first gate electrode 302a is disposed on the glass substrate 1a. As will be described later, the photosensor driving section first gate electrode 302a and the photosensor bottom electrode 202 are formed simultaneously and are composed of the same layer. Here, the term "same layer" includes layers formed simultaneously, layers having substantially the same thickness, and layers made of the same material. The same applies hereinafter.

[0050] This process is a metal electrode deposition process for simultaneously forming the photosensor bottom electrode 202 and the photosensor driver first gate electrode 302a. The photosensor driver first gate electrode 302a is, for example, an alloy of molybdenum and tantalum. The photosensor driver first gate electrode 302a has a thickness of, for example, 200 nm. The photosensor driver first gate electrode 302a also constitutes the photosensor driver scanning electrode 302 shown in FIG. 4. As shown in FIG. 4, a portion of the photosensor driver scanning electrode 302 extends in a branch-like manner and constitutes a part of the photosensor driver thin-film transistor 301. This extended portion constitutes the photosensor driver first gate electrode 302a of the photosensor driver thin-film transistor 301.

[0051] The photosensor driver interlayer insulating film 304 is disposed on the photosensor driver first gate electrode 302a so as to cover the photosensor driver first gate electrode 302a. The photosensor driver interlayer insulating film 304 is, for example, a silicon nitride (SiN) film. The photosensor driver interlayer insulating film 304 has a thickness of, for example, 400 nm. The photosensor driver interlayer insulating film 304 and the photosensor first insulating film 204 are formed simultaneously as described below and are composed of the same layer. This process is an insulating layer deposition process in which the photosensor first insulating film 204 and the photosensor driver interlayer insulating film 304 are formed simultaneously.

[0052] The photosensor driver signal readout electrode 303 is provided on the photosensor driver interlayer insulating film 304. The photosensor driver signal readout electrode 303 is a metal electrode made of, for example, chromium (Cr), aluminum (Al), or titanium (Ti). As shown in FIG. 4, the photosensor driver signal readout electrode 303 extends in the vertical direction of the two-dimensional photosensor-embedded display 100. A portion of the photosensor driver signal readout electrode 303 extends horizontally in a branch-like manner, for example, to the right in FIG. 4. The extended portion of the photosensor driver signal readout electrode 303 constitutes a part of the photosensor driver 300. The extended portion of the photosensor driver signal readout electrode 303 overlaps and is electrically connected to a photosensor driver source / drain transparent electrode 303t (described later) to constitute a photosensor driver source electrode 303a and a photosensor driver drain electrode 303c. The photosensor driving unit source electrode 303a and the photosensor driving unit drain electrode 303c have the function of lowering the resistance of the photosensor driving unit source transparent electrode 303b and the photosensor driving unit drain transparent electrode 303d of the photosensor driving unit source drain transparent electrode 303t, whereas the photosensor driving unit source drain transparent electrode 303t alone has a high resistance.

[0053] The photosensor driver source / drain transparent electrode 303t is disposed on the photosensor driver interlayer insulating film 304, on the extended portion of the photosensor driver scanning electrode 302, i.e., on the photosensor driver first gate electrode 302a, and on the photosensor driver signal readout electrode 303, so as to partially overlap each other. The photosensor driver source / drain transparent electrode 303t is, for example, an ITO film. The photosensor driver source / drain transparent electrode 303t has a thickness of, for example, 100 nm. The photosensor driver source / drain transparent electrode 303t constitutes the photosensor driver source / drain transparent electrode 303b and the photosensor driver drain transparent electrode 303d of the photosensor driver thin film transistor 301. The photosensor driver drain transparent electrode 303d, which is a part of the photosensor driver source / drain transparent electrode 303t, is electrically connected to the photosensor second transparent electrode 209. Alternatively, as will be described later, the photosensor driving portion source / drain transparent electrode 303t and the photosensor second transparent electrode 209 are formed simultaneously and configured in the same layer. This process is a transparent electrode film formation process for simultaneously forming the photosensor second transparent electrode 209 and the photosensor driving portion source / drain transparent electrode 303t.

[0054] The photosensor driver semiconductor layer 305 is arranged in an island shape as shown in Fig. 4. The photosensor driver semiconductor layer 305 is arranged on the photosensor driver interlayer insulating film 304 and overlapping with the photosensor driver source / drain transparent electrode 303t as shown in Fig. 5. The photosensor driver semiconductor layer 305 is made of, for example, a transparent oxide semiconductor (hereinafter referred to as IGZO) made of indium (In), gallium (Ga), zinc (Zn), and oxygen (O).

[0055] The photosensor driver second interlayer insulating film 307 is disposed on the photosensor driver semiconductor layer 305 and the photosensor driver source / drain transparent electrode 303t so as to cover them. The photosensor driver second interlayer insulating film 307 and the photosensor second insulating film 207 may be formed simultaneously as described below, and are configured as the same layer. This process is an insulating layer deposition process in which the photosensor second insulating film 207 and the photosensor driver second interlayer insulating film 307 are formed simultaneously.

[0056] The photosensor driver second gate electrode 308 is disposed at a position overlapping the photosensor driver first gate electrode 302a when viewed in a direction perpendicular to the glass substrate 1a, i.e., from the top of the paper. The photosensor driver first gate electrode 302a and the photosensor driver second gate electrode 308 function as gates for the photosensor driver thin film transistor 301 and control the ON / OFF switching of the photosensor driver thin film transistor 301. The photosensor driver second gate transparent electrode 309 is disposed at a position overlapping the photosensor driver second gate electrode 308 when viewed in a direction perpendicular to the glass substrate 1a, i.e., from the top of the paper. The photosensor driver second gate transparent electrode 309 prevents corrosion of the photosensor driver second gate electrode 308 and improves the reliability of the electrical connection at the terminal.

[0057] Next, the display element driver 400 will be described with reference to Figures 4 and 5. The display element driver 400 has a display element driver thin film transistor 401 and a display element 420. The display element driver thin film transistor 401 and the photosensor driver thin film transistor 301 have the same configuration. The display element driver thin film transistor 401 and the photosensor driver thin film transistor 301 are formed at the same time and are configured in the same layer, as will be described in detail later.

[0058] For example, the display element driver scanning electrode 402 and the photosensor driver scanning electrode 302 are formed simultaneously and are comprised of the same layer. The display element driver signal electrode 403 and the photosensor driver signal readout electrode 303 are formed simultaneously and are comprised of the same layer. The display element driver source electrode 403a and the display element driver drain electrode 403c and the photosensor driver source electrode 303a and the photosensor driver drain electrode 303c are formed simultaneously and are comprised of the same layer. The display element driver interlayer insulating film 404 and the photosensor driver interlayer insulating film 304 are formed simultaneously and are comprised of the same layer. The display element driver semiconductor layer 405 and the photosensor driver semiconductor layer 305 are formed simultaneously and are comprised of the same layer. The display element driver final protective film 410 and the photosensor driver final protective film 310 are formed simultaneously and are comprised of the same layer.

[0059] Being made up of the same layer includes being made up of the same material, the same layer thickness, etc. The same applies hereinafter.

[0060] A method for manufacturing the display 100 with built-in two-dimensional photosensors shown in Fig. 5 will be described with reference to Fig. 6 to Fig. 15. Fig. 6 to Fig. 15 are cross-sectional views of the display 100 with built-in two-dimensional photosensors in each manufacturing process.

[0061] In the first embodiment, after the photodiode 200 is formed, the photosensor driving thin-film transistor 301 and the display element driving thin-film transistor 401, each having IGZO as a semiconductor layer, are formed. This order of formation is preferred. Conversely, if the photodiode 200 is manufactured from IGZO, hydrogen is added from the amorphous silicon to the IGZO during the manufacturing process, making it difficult to obtain favorable characteristics for the IGZO thin-film transistor.

[0062] As shown in FIG. 6, the photosensor bottom electrode 202, the photosensor driver first gate electrode 302a, and the display element driver first gate electrode 402a are simultaneously formed on the glass substrate 1a. This process is a metal electrode deposition process for simultaneously forming the photosensor bottom electrode 202, the photosensor driver first gate electrode 302a, and the display element driver first gate electrode 402a. This deposition process is one of the processes for simultaneously depositing or forming layers constituting the photodiode 200, the photosensor driver thin film transistor 301, and the display element driver thin film transistor 401. For example, a metal thin film made of chromium, aluminum, titanium, or the like is formed by sputtering. The metal thin film has a thickness of, for example, approximately 200 nm. A photoresist is applied to this thin film. A pattern of the metal thin film is formed by photolithography. For example, the metal thin film in the portions not covered by the resist is etched by chlorine-based dry etching. The photosensor bottom electrode 202 has, for example, the pattern shown in the plan view of FIG. 4. The photosensor driving section first gate electrode 302a and the display element driving section first gate electrode 402a have, for example, the pattern shown in the plan view of FIG.

[0063] Next, as shown in FIG. 7, a photosensor semiconductor layer 205, a photosensor ohmic contact layer 206, and a photosensor first transparent electrode 208 are successively stacked to form a stacked body. The photosensor semiconductor layer 205 is, for example, an amorphous silicon (a-Si) layer. The photosensor ohmic contact layer 206 is, for example, an n+ amorphous silicon (n+a-Si) layer. The photosensor first transparent electrode 208 is, for example, ITO. Through a dry etching process, the stacked body is patterned into islands. The island pattern of the stacked body overlaps the island pattern of the photosensor bottom electrode 202, as shown in FIG. 4, for example, and has a smaller area than the island pattern of the photosensor bottom electrode 202.

[0064] Next, as shown in FIG. 8 , the photosensor first insulating film 204, the photosensor driver interlayer insulating film 304, and the display element driver interlayer insulating film 404 are simultaneously formed. The photosensor first insulating film 204, the photosensor driver interlayer insulating film 304, and the display element driver interlayer insulating film 404 are composed of the same layer. This is an insulating layer deposition process for simultaneously forming the photosensor first insulating film 204, the photosensor driver interlayer insulating film 304, and the display element driver interlayer insulating film 404. The photosensor first insulating film 204, the photosensor driver interlayer insulating film 304, and the display element driver interlayer insulating film 404 are, for example, SiN films. The SiN film is formed, for example, by plasma CVD or the like. The SiN film is patterned, for example, by SF6-based dry etching. In particular, the patterning is performed so that a portion of the photosensor first transparent electrode 208 is exposed. Here, the photosensor first transparent electrode 208 functions as an etching stopper. Etching stops at photosensor first transparent electrode 208, so the n+ amorphous silicon is not etched away. Without photosensor first transparent electrode 208, precise control of the etching end point for SF6-based dry etching is required. Since there is no etching stopper, there is a possibility that the n+ amorphous silicon will be etched away. To prevent the n+ amorphous silicon from being etched away, the etching end point must be precisely controlled.

[0065] Next, as shown in FIG. 9, the photosensor driver signal readout electrode 303 and the display element driver signal electrode 403 are formed. The photosensor driver signal readout electrode 303 and the display element driver signal electrode 403 are metal thin films made of, for example, chromium (Cr), aluminum (Al), or titanium (Ti). After the metal thin films are formed, they are patterned by chlorine-based dry etching. Next, as shown in FIG. 10, the photosensor second transparent electrode 209 is formed, and at the same time, the photosensor driver source / drain transparent electrode 303t and the display element driver source / drain transparent electrode 403t are formed. The photosensor second transparent electrode 209, the photosensor driver source / drain transparent electrode 303t, and the display element driver source / drain transparent electrode 403t are formed in the same layer. This process is a transparent electrode film formation process in which the photosensor first transparent electrode 208, the photosensor driver source / drain transparent electrode 303t, and the display element driver source / drain transparent electrode 403t are simultaneously formed. The photosensor driving part source / drain transparent electrode 303t constitutes the photosensor driving part source transparent electrode 303b and the photosensor driving part drain transparent electrode 303d of the photosensor driving part thin film transistor 301. The photosensor driving part drain transparent electrode 303d is continuous with and electrically connected to the photosensor second transparent electrode 209 of the photodiode 200.

[0066] 11, a photosensor driver semiconductor layer 305 and a display element driver semiconductor layer 405 are formed. The photosensor driver semiconductor layer 305 and the display element driver semiconductor layer 405 are each formed of, for example, an IGZO layer. The IGZO layer is formed by sputtering using, for example, an oxide semiconductor target containing In, Ga, and Zn. The IGZO film is etched using, for example, an organic acid such as citric acid or oxalic acid as an etchant.

[0067] 12, the photosensor second insulating film 207, the photosensor driving section second interlayer insulating film 307, and the display element driving section second interlayer insulating film 407 are simultaneously formed. The photosensor second insulating film 207, the photosensor driving section second interlayer insulating film 307, and the display element driving section second interlayer insulating film 407 are configured from the same layer. This process is an insulating layer deposition process in which the photosensor second insulating film 207, the photosensor driving section second interlayer insulating film 307, and the display element driving section second interlayer insulating film 407 are simultaneously formed. The photosensor second insulating film 207, the photosensor driving section second interlayer insulating film 307, and the display element driving section second interlayer insulating film 407 are made of, for example, silicon oxide (SiO2) and are formed by, for example, a plasma CVD method.

[0068] Next, as shown in FIG. 13, a photosensor driver second gate electrode 308 and a display element driver second gate electrode 408 are laminated. Furthermore, a photosensor driver second gate transparent electrode 309 and a display element driver second gate transparent electrode 409 are laminated and patterned. The photosensor driver second gate electrode 308 and the display element driver second gate electrode 408 are metal electrodes made of, for example, chromium (Cr), aluminum (Al), or titanium (Ti). The photosensor driver second gate electrode 308 functions as a second gate electrode in the photosensor driver thin-film transistor 301. This configuration is conventionally known as a double-gate configuration. The photosensor driver second gate electrode 308 assists the photosensor driver first gate electrode 302a in functioning as a gate. The photosensor driver second gate transparent electrode 309 covers the photosensor driver second gate electrode 308 and serves to prevent deterioration of the photosensor driver second gate electrode 308. The display element driving section second gate electrode 408 has the same function as the photosensor driving section second gate electrode 308. The display element driving section second gate transparent electrode 409 has the same function as the photosensor driving section second gate transparent electrode 309.

[0069] Furthermore, as shown in FIG. 14, a display element driver final protective film 410, a photosensor driver final protective film 310, and a photosensor third insulating film 210 are simultaneously formed. For example, a SiN film is formed as the insulating film. Next, a display element driver common electrode 411 is formed. The display element driver common electrode 411 is a transparent electrode, and is formed of, for example, ITO. Next, a display element interlayer insulating film 412 is formed. The display element interlayer insulating film 412 is, for example, SiN, and has a thickness of, for example, 300 nm. Next, in the display element driver 400, a display element driver contact hole CH1 is formed so as to expose the display element driver drain transparent electrode 403d.

[0070] Furthermore, as shown in FIG. 15, a display element comb electrode 421 is formed. The display element comb electrode 421 is a transparent electrode made of, for example, ITO. The display element comb electrode 421 is electrically connected to the display element driver drain transparent electrode 403d through the display element driver contact hole CH1. As a liquid crystal process, an alignment film (not shown in FIG. 15) is formed and rubbed, and then the substrate is bonded to the opposing glass substrate 1b. Liquid crystal is then injected to form a liquid crystal layer 422. A voltage is applied between the display element comb electrode 421 and the display element driver common electrode 411, which changes the alignment state of the liquid crystal and realizes a display.

[0071] (Variation 1) In the embodiment described above, as shown in FIGS. 4 and 5 , the photosensor semiconductor layer 205 of the photodiode 200 and the photosensor driver thin-film transistor 301 are made of amorphous silicon, and the photosensor driver semiconductor layer 305 is made of IGZO, which are different from each other. The photosensor semiconductor layer 205 and the photosensor driver semiconductor layer 305 are also different in Modification 1. However, in Modification 1, the layers in which the components of the photodiode 200 are formed are different. Modification 1 will be described with reference to FIGS. 16 and 17 . FIG. 16 is a plan view of a two-dimensional photosensor-embedded display 100 according to Modification 1, particularly the pixel section 103. FIG. 17 is a cross-sectional view of a two-dimensional photosensor-embedded display 100 according to Modification 1, particularly the pixel section 103.

[0072] In Modification 1, as shown in FIG. 17 , the photosensor bottom electrode 202 is formed in the same layer as the photosensor driver signal readout electrode 303. This process is a metal electrode deposition process in which the photosensor bottom electrode 202 and the photosensor driver signal readout electrode 303 are simultaneously formed. Compare FIG. 16 with FIG. 4 . In FIG. 4 , the photosensor bottom electrode 202, which determines the reference voltage Vb of the photodiode 200, runs horizontally in the drawing, parallel to the photosensor driver scanning electrode 302. This is because the photosensor bottom electrode 202 is formed in the same layer as the photosensor driver scanning electrode 302. On the other hand, in FIG. 16 showing Modification 1, the photosensor bottom electrode 202 is arranged vertically in the drawing, parallel to the photosensor driver signal readout electrode 303. The photosensor bottom electrode 202 is arranged parallel to the photosensor driver signal readout electrode 303 so that the photosensor bottom electrode 202 and the photosensor driver signal readout electrode 303 do not intersect. This is because the photosensor bottom electrode 202 is formed in the same layer as the photosensor driver signal readout electrode 303. A reference voltage Vb, for example, −1 V, is applied to the photosensor bottom electrode 202.

[0073] 16 and 17, the structure and manufacturing method of the two-dimensional photosensor-embedded display 100 in Modification 1 will be described. In Modification 1, the relationship between the photosensor driving section 300 and the display element driving section 400 is the same as that in the first embodiment. Therefore, in the following description, the description of the display element driving section 400 will be omitted as appropriate.

[0074] The photosensor driver first gate electrode 302a is disposed on the glass substrate 1a. As shown in Fig. 16, the photosensor driver first gate electrode 302a extends in a branch-like manner from the photosensor driver scanning electrode 302 and functions as the photosensor driver first gate electrode 302a of the photosensor driver thin film transistor 301. The photosensor driver first gate electrode 302a is made of, for example, a laminate of titanium, aluminum and titanium, aluminum, molybdenum, copper, or the like.

[0075] Next, the photosensor first insulating film 204, the photosensor driver interlayer insulating film 304, and the display element driver interlayer insulating film 404 are simultaneously formed. This process is an insulating layer deposition process in which the photosensor first insulating film 204, the photosensor driver interlayer insulating film 304, and the display element driver interlayer insulating film 404 are simultaneously formed. The photosensor first insulating film 204, the photosensor driver interlayer insulating film 304, and the display element driver interlayer insulating film 404 are made of, for example, silicon nitride (SiN). The photosensor first insulating film 204, the photosensor driver interlayer insulating film 304, and the display element driver interlayer insulating film 404 each have a thickness of, for example, 400 nm.

[0076] Next, the photosensor bottom electrode 202 is formed on the photosensor first insulating film 204 (the same layer as the photosensor driver interlayer insulating film 304), and at the same time, the photosensor driver signal readout electrode 303 of the photosensor driver thin-film transistor 301 is formed on the photosensor driver interlayer insulating film 304. The photosensor bottom electrode 202 and the photosensor driver signal readout electrode 303 are configured in the same layer. This process is a metal electrode film formation process in which the photosensor bottom electrode 202 and the photosensor driver signal readout electrode 303 are simultaneously formed. As shown in FIG. 16, the photosensor bottom electrode 202 extends linearly vertically and has a rectangular extension portion. The photosensor driver signal readout electrode 303 also has an extension portion as shown in FIG. 16. The extension portion does not contact the photosensor driver semiconductor layer 305 described below, but is arranged close to a channel portion of the photosensor driver semiconductor layer 305. The photosensor bottom electrode 202 and the photosensor driver signal readout electrode 303 are preferably made of, for example, an alloy of molybdenum and tantalum (MoTa).

[0077] As shown in FIG. 17, the photosensor bottom transparent electrode 202t is formed on the photosensor bottom electrode 202 so as to cover the photosensor bottom electrode 202. The photosensor driver source / drain transparent electrode 303t is simultaneously formed. This process is a transparent electrode film formation process in which the photosensor bottom transparent electrode 202t and the photosensor driver source / drain transparent electrode 303t are simultaneously formed. The photosensor bottom transparent electrode 202t and the photosensor driver source / drain transparent electrode 303t are made of, for example, ITO. The photosensor bottom transparent electrode 202t and the photosensor driver source / drain transparent electrode 303t, as well as the photosensor bottom electrode 202 and the photosensor driver signal readout electrode 303, are patterned by a wet process using, for example, hydrochloric acid or oxalic acid, or a dry process. The photosensor driver source / drain transparent electrode 303t is patterned to form the photosensor driver source / drain transparent electrode 303b and the photosensor driver drain transparent electrode 303d.

[0078] Next, the photosensor semiconductor layer 205, photosensor ohmic contact layer 206, and photosensor first transparent electrode 208 are formed in this order and then collectively patterned into an island shape. The photosensor semiconductor layer 205 is amorphous silicon, the photosensor ohmic contact layer 206 is an n+ amorphous silicon layer, and the photosensor first transparent electrode 208 is ITO. For example, a chlorine-based dry etching method is used for patterning. During the collectively patterning into an island shape, the lower photosensor first transparent electrode 208 functions as a so-called etching stopper that prevents the photosensor driver ohmic contact layer 306 from being etched.

[0079] Next, the photosensor driver semiconductor layer 305 is formed. The photosensor driver semiconductor layer 305 includes, for example, IGZO. The IGZO layer is formed by sputtering using, for example, an oxide semiconductor target containing In, Ga, and Zn. The IGZO film is etched using, for example, an organic acid such as citric acid or oxalic acid as an etchant.

[0080] The photosensor second insulating film 207 is formed to cover the photosensor first transparent electrode 208. A portion of the photosensor second insulating film 207 is removed from above the photosensor first transparent electrode 208. Here, the photosensor first transparent electrode 208 prevents etching of the photosensor second insulating film 207 from eroding the photosensor ohmic contact layer 206. A photosensor driving section second interlayer insulating film 307 and a display element driving section second interlayer insulating film 407 are formed simultaneously with the photosensor second insulating film 207. The photosensor driving section second interlayer insulating film 307, the display element driving section second interlayer insulating film 407, and the photosensor second insulating film 207 are formed in the same layer. This process is an insulating layer formation process in which the photosensor second insulating film 207, the photosensor driving section second interlayer insulating film 307, and the display element driving section second interlayer insulating film 407 are simultaneously formed. The photosensor second insulating film 207, the photosensor driver second interlayer insulating film 307, and the display element driver second interlayer insulating film 407 are made of, for example, silicon oxide (SiOx). A portion of the photosensor driver second interlayer insulating film 307 is removed from the portion that forms the photosensor driver drain electrode 303c. The portion from which the photosensor driver second interlayer insulating film 307 has been removed functions as a second contact hole CH2.

[0081] The photosensor driving section second gate electrode 308 is formed and patterned. The photosensor driving section second gate electrode 308 is, for example, an alloy of molybdenum and tantalum (MoTa). The photosensor driving section second gate electrode 308 is patterned so as to overlap with the photosensor driving section first gate electrode 302a in a plan view, and functions as a second gate electrode.

[0082] The photosensor second transparent electrode 209 is formed and patterned so as to cover the photosensor first transparent electrode 208 and the second contact hole CH2. The photosensor second transparent electrode 209 is formed simultaneously with the photosensor driving unit second gate transparent electrode 309. This process is a transparent electrode film formation process in which the photosensor second transparent electrode 209 and the photosensor driving unit second gate transparent electrode 309 are formed simultaneously. The photosensor second transparent electrode 209 is electrically connected to the photosensor driving unit drain transparent electrode 303d through the second contact hole CH2.

[0083] The photocurrent generated in the photodiode 200 flows from the photosensor first transparent electrode 208 through the second contact hole CH2 to the photosensor driver drain transparent electrode 303d, and when the photosensor driver first gate electrode 302a and the photosensor driver second gate electrode 308 are turned ON, the photocurrent reaches the photosensor driver source electrode 303a. A signal is transmitted from the photosensor driver source electrode 303a through the photosensor driver signal readout electrode 303 to the signal processing circuit 150 shown in FIG. 1.

[0084] (Variation 2) In the first embodiment and the first modification, the photosensor driver thin film transistor 301 and the display element driver thin film transistor 401 have a so-called bottom gate configuration, which includes a photosensor driver first gate electrode 302a and a display element driver first gate electrode 402a. Additionally, a photosensor driver second gate electrode 308 and a display element driver second gate electrode 408 are provided as auxiliary gate electrodes. A top gate structure in which only the photosensor driver second gate electrode 308 and the display element driver second gate electrode 408 are provided, or a bottom gate structure in which the photosensor driver second gate electrode 308 and the display element driver second gate electrode 408 are not provided, are also possible.

[0085] (Embodiment 2) In the first embodiment, the photosensor semiconductor layer 205 of the photodiode 200, the photosensor driving section semiconductor layer 305 of the photosensor driving section thin film transistor 301, and the display element driving section semiconductor layer 405 were different semiconductor layers. In contrast, in the second embodiment, the photosensor semiconductor layer 205 of the photodiode 200, the photosensor driving section semiconductor layer 305 of the photosensor driving section thin film transistor 301, and the display element driving section semiconductor layer 405 of the display element driving section thin film transistor 401 are composed of the same semiconductor layer and are deposited simultaneously. This process is a semiconductor layer deposition process in which the photosensor driving section semiconductor layer 305, the photosensor driving section semiconductor layer 305, and the display element driving section semiconductor layer 405 are simultaneously formed. The structure and manufacturing method will be described with reference to FIGS. 18 to 26. FIG. 18 is a plan view of a two-dimensional photosensor-embedded display 100 according to the second embodiment, particularly the pixel section 103. FIGS. 19 to 26 are cross-sectional views of the two-dimensional photosensor-embedded display 100, particularly the pixel section 103, in each manufacturing process.

[0086] The two-dimensional photosensor-embedded display 100 has a photodiode 200, a photosensor driving unit 300, and a display element driving unit 400. The photodiode 200 has a Schottky diode with a Schottky barrier portion S. The Schottky diode is the photodiode 200 that responds to external light L. The photosensor driving unit thin film transistor 301 of the photosensor driving unit 300 is a channel-etch type thin film transistor.

[0087] 18 and / or 19, the photodiode 200 has a photosensor bottom electrode 202, a photosensor first insulating film 204, a photosensor semiconductor layer 205, a photosensor ohmic contact layer 206, a photosensor first transparent electrode 208, and a photosensor second insulating film 207. A Schottky barrier portion S appears at the interface between the photosensor bottom electrode 202 and the photosensor semiconductor layer 205. A Schottky diode is configured with the direction from the photosensor bottom electrode 202 to the photosensor first transparent electrode 208 as the forward direction.

[0088] The glass substrate 1a is, for example, alkali-free glass, such as borosilicate glass. The glass substrate 1a has a thickness of, for example, 0.5 to 0.7 mm. The photosensor bottom electrode 202 is disposed on the glass substrate 1a. The photosensor bottom electrode 202 has, for example, a substantially rectangular shape. The photosensor bottom electrode 202 is, for example, an alloy of molybdenum and tantalum. The photosensor bottom electrode 202 has a thickness of, for example, 200 nm.

[0089] A photosensor first insulating film 204 is disposed to cover the photosensor bottom electrode 202 except for a photosensor first insulating film removal portion RM1. The film formation process will be described in detail later. After the photosensor first insulating film 204 is formed to cover the photosensor bottom electrode 202, a portion of the photosensor first insulating film 204 is removed at the photosensor first insulating film removal portion RM1 above the photosensor bottom electrode 202. The photosensor first insulating film 204 is, for example, a silicon nitride / silicon oxide (SiN / SiO2) film. The photosensor first insulating film 204 has a thickness of, for example, 400 nm. A photosensor semiconductor layer 205 is disposed on the photosensor bottom electrode 202. The photosensor semiconductor layer 205 has, for example, a substantially rectangular shape. The photosensor semiconductor layer 205 is, for example, an amorphous silicon layer. The photosensor semiconductor layer 205 has a thickness of, for example, 200 nm. A photosensor ohmic contact layer 206 is disposed on the photosensor semiconductor layer 205. The photosensor ohmic contact layer 206 is, for example, an n+ amorphous silicon layer. The n+ amorphous silicon layer has a thickness of, for example, 50 nm. The photosensor first transparent electrode 208 is disposed so as to cover the photosensor first insulating film 204 and the photosensor ohmic contact layer 206. The photosensor first transparent electrode 208 is, for example, a film of an oxide of an alloy of indium and titanium (ITO). The photosensor first transparent electrode 208 has a thickness of, for example, 100 nm. The photosensor first transparent electrode 208 and the photosensor ohmic contact layer 206 are in contact with each other and electrically connected. The photosensor second insulating film 207 is disposed so as to cover the photosensor first transparent electrode 208.

[0090] A Schottky barrier portion S is formed between the photosensor bottom electrode 202 and the photosensor semiconductor layer 205. Meanwhile, due to the presence of the photosensor ohmic contact layer 206, the photosensor first transparent electrode 208, the photosensor ohmic contact layer 206, and the photosensor semiconductor layer 205 are in ohmic contact with each other, and no Schottky barrier is formed. The photosensor bottom electrode 202, the photosensor semiconductor layer 205, the photosensor ohmic contact layer 206, and the photosensor first transparent electrode 208 constitute a Schottky diode. A Schottky diode with the forward direction being from the photosensor bottom electrode 202 to the photosensor first transparent electrode 208 is realized.

[0091] Next, the photosensor driver 300 will be described with reference to FIGS. 18 and 19. The photosensor driver 300 includes a photosensor driver thin-film transistor 301 and a photosensor driver signal readout electrode 303. The photosensor driver thin-film transistor 301 includes a photosensor driver first gate electrode 302a, a photosensor driver interlayer insulating film 304, a photosensor driver semiconductor layer 305, a photosensor driver ohmic contact layer 306, a photosensor driver source electrode 303a, a photosensor driver drain electrode 303c, a photosensor driver source transparent electrode 303b and a photosensor driver drain transparent electrode 303d, each of which is formed by a photosensor driver source-drain transparent electrode 303t. The source electrode has a laminated configuration in which the photosensor driver source electrode 303a, which is formed by extending branch-like from the photosensor driver signal readout electrode 303, and the photosensor driver source transparent electrode 303b, which is formed by the photosensor driver source-drain transparent electrode 303t, are stacked. The drain electrode has a laminated structure in which a photosensor driving section drain electrode 303c formed by extending in a branch-like manner from the photosensor driving section signal readout electrode 303 and a photosensor driving section drain transparent electrode 303d composed of a photosensor driving section source-drain transparent electrode 303t are stacked.

[0092] The photosensor driver first gate electrode 302a is disposed on the glass substrate 1a. The photosensor driver first gate electrode 302a and the photosensor bottom electrode 202 are formed simultaneously and in the same layer, as described below. This process is a metal electrode deposition process for simultaneously forming the photosensor bottom electrode 202 and the photosensor driver first gate electrode 302a. The photosensor driver first gate electrode 302a is, for example, an alloy of molybdenum and tantalum. The photosensor driver first gate electrode 302a has a thickness of, for example, 200 nm. The photosensor driver first gate electrode 302a is part of the photosensor driver scanning electrode 302 shown in FIG. 18. As shown in FIG. 18, a portion of the photosensor driver scanning electrode 302 extends in a branch-like manner and constitutes part of the photosensor driver thin-film transistor 301. This extended portion constitutes the photosensor driver first gate electrode 302a of the photosensor driver thin-film transistor 301.

[0093] The photosensor driver interlayer insulating film 304 is disposed on the photosensor driver first gate electrode 302a so as to cover the photosensor driver first gate electrode 302a. The photosensor driver interlayer insulating film 304 is, for example, a silicon nitride (SiN) film. The photosensor driver interlayer insulating film 304 has a thickness of, for example, 400 nm. The photosensor driver interlayer insulating film 304 and the photosensor first insulating film 204 are formed simultaneously as described below and are formed in the same layer. This process is an insulating layer deposition process in which the photosensor first insulating film 204 and the photosensor driver interlayer insulating film 304 are formed simultaneously.

[0094] As shown in FIG. 18, the photosensor driver semiconductor layer 305 is arranged in an island shape to cover the photosensor driver first gate electrode 302a. As shown in FIG. 19, the photosensor driver semiconductor layer 305 is arranged on the photosensor driver interlayer insulating film 304. An amorphous silicon layer, for example, is used as the photosensor driver semiconductor layer 305. A photosensor driver ohmic contact layer 306 is provided on the amorphous silicon layer. The photosensor driver ohmic contact layer 306 is made of, for example, n+ amorphous silicon. As will be described in detail later, the photosensor semiconductor layer 205 and the photosensor driver semiconductor layer 305 are formed simultaneously and are made of the same layer. The photosensor ohmic contact layer 206 and the photosensor driver ohmic contact layer 306 are formed simultaneously and are made of the same layer. This process is an ohmic contact layer deposition process in which the photosensor ohmic contact layer 206 and the photosensor driver ohmic contact layer 306 are formed simultaneously. The photosensor semiconductor layer 205 and the photosensor driver semiconductor layer 305 each have a thickness of, for example, 200 nm. The n+ amorphous silicon layers constituting the photosensor ohmic contact layer 206 and the photosensor driver ohmic contact layer 306 each have a thickness of, for example, 50 nm.

[0095] The photosensor driver signal readout electrode 303 shown in FIG. 18 is provided on the photosensor driver interlayer insulating film 304 and the photosensor driver ohmic contact layer 306. The photosensor driver signal readout electrode 303 is a metal electrode made of, for example, chromium (Cr), aluminum (Al), or titanium (Ti). As shown in FIG. 18, the photosensor driver signal readout electrode 303 extends in the vertical direction of the two-dimensional photosensor-embedded display 100. A portion of the photosensor driver signal readout electrode 303 extends in a branch-like manner in the horizontal direction, for example, to the right in FIG. 18. The extended portion of the photosensor driver signal readout electrode 303 constitutes a part of the photosensor driver 300.

[0096] As shown in FIG. 19 , the photosensor driver source / drain transparent electrodes 303t are provided at two locations on the photosensor driver ohmic contact layer 306, sandwiching the photosensor driver first gate electrode 302a. One functions as the photosensor driver source / drain transparent electrode 303b of the photosensor driver thin film transistor 301, and the other functions as the photosensor driver drain transparent electrode 303d of the photosensor driver thin film transistor 301. The photosensor driver drain transparent electrode 303d, which is a part of the photosensor driver source / drain transparent electrode 303t, is electrically connected to the photosensor first transparent electrode 208. In this embodiment, as described below, the photosensor driver source / drain transparent electrode 303t and the photosensor first transparent electrode 208 are formed simultaneously and are configured from the same layer. This process is a transparent electrode deposition process in which the photosensor first transparent electrode 208 and the photosensor driver source / drain transparent electrode 303t are simultaneously formed. 19, the photosensor driver drain transparent electrode 303d, which is a part of the photosensor driver source / drain transparent electrode 303t, extends to form the photosensor first transparent electrode 208. The photosensor driver drain electrode 303c is disposed on the photosensor driver ohmic contact layer 306 so as to cover the photosensor driver ohmic contact layer 306. The photosensor driver source / drain transparent electrode 303t and the photosensor first transparent electrode 208 are, for example, films of an oxide of an alloy of indium and titanium (ITO). The photosensor first transparent electrode 208 and the photosensor driver source / drain transparent electrode 303t have a thickness of, for example, 100 nm.

[0097] The photosensor driver ohmic contact layer 306, the photosensor driver source electrode 303a, the photosensor driver source transparent electrode 303b, the photosensor driver drain electrode 303c, and the photosensor driver drain transparent electrode 303d are patterned and arranged in two parts on the photosensor driver semiconductor layer 305.

[0098] The photosensor driver second interlayer insulating film 307 is disposed on the photosensor driver source / drain transparent electrode 303t. The photosensor driver second interlayer insulating film 307 is made of, for example, silicon nitride (SiN). As will be described later, the photosensor driver second insulating film 207 and the photosensor driver second interlayer insulating film 307 are formed simultaneously and are made of the same layer. This process is an insulating layer deposition process in which the photosensor driver second insulating film 207 and the photosensor driver second interlayer insulating film 307 are formed simultaneously.

[0099] External light L is incident on the photodiode 200, and a photocurrent is generated in the photodiode 200. An ON voltage (e.g., 15 V) is applied to the photosensor driver first gate electrode 302a, and the photosensor driver drain electrode 303c and the photosensor driver source electrode 303a are brought into a conductive state. The photocurrent is transmitted from the photosensor first transparent electrode 208 through the photosensor driver drain transparent electrode 303d, the photosensor driver drain electrode 303c, the photosensor driver source transparent electrode 303b, the photosensor driver source electrode 303a, and the photosensor driver signal readout electrode 303 to the signal processing circuit 150.

[0100] Next, the display element driving section 400 will be described with reference to Fig. 18 and Fig. 19. The display element driving section 400 has a display element driving section thin film transistor 401 and a display element 420. The display element driving section thin film transistor 401 and the photosensor driving section thin film transistor 301 have the same configuration. The display element driving section thin film transistor 401 and the photosensor driving section thin film transistor 301 are formed at the same time and are configured in the same layer, as will be described in detail later.

[0101] For example, the display element driver scanning electrode 402 and the photosensor driver scanning electrode 302 are formed simultaneously and are comprised of the same layer. The display element driver signal electrode 403 and the photosensor driver signal readout electrode 303 are formed simultaneously and are comprised of the same layer. The display element driver source electrode 403a and the display element driver drain electrode 403c and the photosensor driver source electrode 303a and the photosensor driver drain electrode 303c are formed simultaneously and are comprised of the same layer. The display element driver interlayer insulating film 404 and the photosensor driver interlayer insulating film 304 are formed simultaneously and are comprised of the same layer. The display element driver semiconductor layer 405 and the photosensor driver semiconductor layer 305 are formed simultaneously and are comprised of the same layer. The display element driver final protective film 410 and the photosensor driver final protective film 310 are formed simultaneously and are comprised of the same layer.

[0102] The display element driving section 400 in the second embodiment controls the application of voltage to the display element 420, as in the first embodiment. The display element driving section 400 controls the display.

[0103] A method for manufacturing the display 100 with built-in two-dimensional photosensors shown in Fig. 19 will be described with reference to Fig. 18 to Fig. 26. Fig. 20 to Fig. 26 are cross-sectional views of the display 100 with built-in two-dimensional photosensors, particularly the pixel section 103, taken along line III-III in Fig. 18 in each manufacturing step.

[0104] As shown in FIG. 20 , a photosensor bottom electrode 202, a photosensor driver first gate electrode 302a, and a display element driver first gate electrode 402a are simultaneously formed on a glass substrate 1a. For example, a metal thin film made of chromium, aluminum, titanium, or the like is formed by sputtering. The metal thin film has a thickness of, for example, approximately 200 nm. Photoresist is applied to this thin film. A pattern of the metal thin film is formed by photolithography. For example, chlorine-based dry etching is used to etch the metal thin film in the portions not covered by the resist. The photosensor bottom electrode 202 has, for example, the pattern shown in the plan view of FIG. 18 . The photosensor driver first gate electrode 302a and the display element driver first gate electrode 402a have, for example, the pattern shown in the plan view of FIG. 18 . This process is a metal electrode film formation process in which the photosensor bottom electrode 202, the photosensor driver first gate electrode 302a, and the display element driver first gate electrode 402a are simultaneously formed.

[0105] Next, as shown in FIG. 21 , the photosensor first insulating film 204, the photosensor driver interlayer insulating film 304, and the display element driver interlayer insulating film 404 are simultaneously formed. The photosensor first insulating film 204, the photosensor driver interlayer insulating film 304, and the display element driver interlayer insulating film 404 are configured from the same layer. This is an insulating layer formation process for simultaneously forming the photosensor first insulating film 204, the photosensor driver interlayer insulating film 304, and the display element driver interlayer insulating film 404. The photosensor first insulating film 204, the photosensor driver interlayer insulating film 304, and the display element driver interlayer insulating film 404 are, for example, SiN films. The SiN film is formed by, for example, a plasma CVD method. The SiN film is patterned by, for example, SF6-based dry etching. In particular, the patterning is performed so that a portion of the photosensor bottom electrode 202 is exposed. In the photodiode 200, a photosensor first insulating film removal portion RM1 is formed on the photosensor bottom electrode 202.

[0106] Next, as shown in Figure 22, the photosensor semiconductor layer 205, photosensor driver semiconductor layer 305, and display element driver semiconductor layer 405, and the photosensor ohmic contact layer 206, photosensor driver ohmic contact layer 306, and display element driver ohmic contact layer 406 are successively laminated to form a laminate. The photosensor semiconductor layer 205, photosensor driver semiconductor layer 305, and display element driver semiconductor layer 405 are formed simultaneously and constitute the same layer. This process is a semiconductor layer deposition process in which the photosensor semiconductor layer 205, photosensor driver semiconductor layer 305, and display element driver semiconductor layer 405 are formed simultaneously. The photosensor ohmic contact layer 206, photosensor driver ohmic contact layer 306, and display element driver ohmic contact layer 406 are formed simultaneously and constitute the same layer. This process is an ohmic contact layer deposition process for simultaneously forming the photosensor ohmic contact layer 206, the photosensor driver ohmic contact layer 306, and the display element driver ohmic contact layer 406. The photosensor semiconductor layer 205, the photosensor driver semiconductor layer 305, and the display element driver semiconductor layer 405 are, for example, amorphous silicon (a-Si) layers. The photosensor ohmic contact layer 206, the photosensor driver ohmic contact layer 306, and the display element driver ohmic contact layer 406 are, for example, n+ amorphous silicon (n+a-Si) layers. The stack is patterned into islands through an SF6-based dry etching process. The island pattern of the stack is shown in FIG. 18, for example. The photosensor semiconductor layer 205 and the photosensor ohmic contact layer 206 overlap the island pattern of the photosensor bottom electrode 202 and have areas equal to or smaller than the island pattern of the photosensor bottom electrode 202.

[0107] Next, as shown in FIG. 23, a photosensor driver signal readout electrode 303 and a display element driver signal electrode 403 are formed. The photosensor driver signal readout electrode 303 is a metal thin film made of, for example, chromium (Cr), aluminum (Al), or titanium (Ti). After the metal thin film is formed, it is patterned by chlorine-based dry etching. The photosensor driver signal readout electrode 303 extends in a branch-like manner as shown in FIG. 18 and is also disposed on the photosensor driver semiconductor layer 305 and the photosensor driver ohmic contact layer 306. The portions extending from the photosensor driver signal readout electrode 303 constitute the photosensor driver source electrode 303a and the photosensor driver drain electrode 303c of the photosensor driver thin film transistor 301. The display element driver signal electrode 403 extends in a branch-like manner as shown in FIG. 18 and is also disposed on the display element driver semiconductor layer 405 and the display element driver ohmic contact layer 406. The portions extending from the display element driver signal electrode 403 constitute a display element driver source electrode 403 a and a display element driver drain electrode 403 c of the display element driver thin film transistor 401 .

[0108] Next, as shown in FIG. 24, the photosensor first transparent electrode 208, the photosensor driver source / drain transparent electrode 303t, and the display element driver source / drain transparent electrode 403t are simultaneously formed. The photosensor first transparent electrode 208, the photosensor driver source / drain transparent electrode 303t, and the display element driver source / drain transparent electrode 403t are configured in the same layer. This process is a transparent electrode film formation process in which the photosensor first transparent electrode 208, the photosensor driver source / drain transparent electrode 303t, and the display element driver source / drain transparent electrode 403t are simultaneously formed. The photosensor first transparent electrode 208 is arranged in an island shape on the photosensor semiconductor layer 205 and the photosensor ohmic contact layer 206, as shown in FIG.

[0109] Meanwhile, a portion of the photosensor driver source / drain transparent electrode 303t and the photosensor driver signal readout electrode 303 disposed above the photosensor driver first gate electrode 302a is patterned. At the same time, a portion of the display element driver source / drain transparent electrode 403t and the display element driver signal electrode 403 disposed above the display element driver first gate electrode 402a is patterned. The patterning is performed, for example, by chlorine-based dry etching. As shown in FIGS. 18 and 24, the photosensor driver source / drain transparent electrodes 303t are disposed at two separate locations, sandwiching the photosensor driver first gate electrode 302a, which is made of the photosensor driver first gate electrode 302a. One photosensor driver source / drain transparent electrode 303t functions as the photosensor driver source / drain transparent electrode 303b, and the other photosensor driver source / drain transparent electrode 303t functions as the photosensor driver drain transparent electrode 303d. The photosensor first transparent electrode 208 and the photosensor driver drain transparent electrode 303d, which is a part of the photosensor driver source-drain transparent electrode 303t, are integrated and electrically conductive.

[0110] Next, as shown in FIG. 25, the photosensor driver ohmic contact layer 306 and a portion of the photosensor driver semiconductor layer 305 are patterned using the photosensor driver source transparent electrode 303b and the photosensor driver drain transparent electrode 303d (composed of the photosensor driver source / drain transparent electrode 303t) as a mask or resist. This forms a photosensor driver channel etch portion CE1. At the same time, the display element driver ohmic contact layer 406 and a portion of the display element driver semiconductor layer 405 are patterned using the display element driver source transparent electrode 403b and the display element driver drain transparent electrode 403d (composed of the display element driver source / drain transparent electrode 403t) as a mask or resist. This forms a display element driver channel etch portion CE2. SF4-based dry etching is used, for example. This method is commonly referred to as a channel etching method. Precise control of the etching end point of the SF6-based dry etching is required. Because there is no etching stopper, there is a possibility that not only the n+ amorphous silicon but also the amorphous silicon will be etched away. The etching end point must be controlled so that the amorphous silicon is not etched away.

[0111] 26, the photosensor second insulating film 207, the photosensor driving section second interlayer insulating film 307, and the display element driving section second interlayer insulating film 407 are simultaneously formed. The photosensor second insulating film 207, the photosensor driving section second interlayer insulating film 307, and the display element driving section second interlayer insulating film 407 are configured from the same layer. This process is an insulating layer deposition process in which the photosensor second insulating film 207, the photosensor driving section second interlayer insulating film 307, and the display element driving section second interlayer insulating film 407 are simultaneously formed. The photosensor second insulating film 207, the photosensor driving section second interlayer insulating film 307, and the display element driving section second interlayer insulating film 407 are made of, for example, silicon nitride (SiN) and are formed by, for example, a plasma CVD method.

[0112] Next, as in the first embodiment, a display element driving configuration is formed. A display element driver common electrode 411 is formed. The display element driver common electrode 411 is a transparent electrode, for example, made of ITO. Next, a display element interlayer insulating film 412 is formed. The display element interlayer insulating film 412 is made of, for example, SiN and has a thickness of, for example, 300 nm. Next, in the display element driver 400, a display element driver contact hole CH1 is formed to expose the display element driver drain transparent electrode 403d. A display element comb-tooth electrode 421 is formed. The display element comb-tooth electrode 421 is a transparent electrode, for example, made of ITO. As a liquid crystal process, an alignment film (not shown in FIG. 26) is formed and rubbed, and then the substrate is bonded to the opposing glass substrate 1b, and liquid crystal is injected to form a liquid crystal layer 422. A polarizing plate (not shown in FIG. 26) is then bonded. A voltage is applied between the display element comb-tooth electrode 421 and the display element driver common electrode 411, changing the alignment state of the liquid crystal and realizing a display.

[0113] (Embodiment 3) In the photosensing unit 102 according to the above embodiment, as shown in FIG. 1, photocurrent from the photodiode 200 is detected through a photosensor driver thin-film transistor 301. This is called an active matrix system. The third embodiment discloses a photosensing unit 102 based on a direct drive system. In the third embodiment, the active matrix photosensing unit 102 in the first embodiment is replaced with a direct drive photosensing unit 102. The third embodiment will be described with reference to FIGS. 27 to 29. FIG. 27 is a circuit diagram showing an overall outline of the photosensing unit 102 according to the third embodiment. In FIG. 27, the display element driver 400 is omitted. FIG. 28 is a plan view of the pixel unit 103. FIG. 29 is a cross-sectional view taken along line II in FIG. 28. The pixel unit 103 includes a photosensing unit 102 having a photodiode 200, a display element driver 400, and a display element 420.

[0114] The photodiode 200 according to the third embodiment has the same configuration as the photodiode 200 according to the first embodiment. The display element driving section 400 according to the third embodiment has the same configuration as the display element driving section 400 according to the first embodiment.

[0115] As shown in FIG. 27 , the anode of the photodiode 200 is connected to a plurality of photosensor bottom electrodes 202 arranged in the horizontal direction. As shown in FIG. 29 , the photosensor bottom electrodes 202 are formed on the bottom of the glass substrate 1 and are metal electrodes similar to the photosensor bottom electrodes 202 shown in FIG. 4 . Hereinafter, layers with the same reference numerals as those described in FIGS. 1 to 26 are made of the same materials and therefore will not be described again. As shown in FIGS. 27 and 28 , the photosensor bottom electrodes 202 extend in the horizontal direction. As shown in FIG. 29 , the cathode of the photodiode 200 is formed by a photosensor first transparent electrode 208. The photosensor first transparent electrode 208 is connected to a photosensor direct signal readout electrode 311 via a photosensor second transparent electrode 209. The photosensor direct signal readout electrode 311 extends in the vertical direction as shown in FIGS. 27 and 28 . In FIGS. 27 and 28 , four rows and four columns of photosensors are provided. The photosensor direct signal readout electrodes 311 are provided corresponding to each row. For example, in FIGS. 27 to 29, four photosensor direct signal readout electrodes 311 are provided for each column, as indicated by reference numerals 311a to 311d. Four photosensor direct signal readout electrodes 311 are provided for each column, for a total of 16 electrodes since there are four columns. The photosensor direct signal readout electrodes 311 are connected to a signal processing circuit 150, as shown in FIG. 27. The signal processing circuit 150 detects the in-plane distribution of the intensity of light incident on each photodiode 200 from the signal of each photodiode 200.

[0116] 27 to 29 has the advantage of not requiring the photosensor driving unit thin film transistor 301. Apart from the glass substrate 1 on which the photosensing unit 102 is mounted, the signal processing circuit 150 can be realized using a silicon integrated circuit (Si-IC).

[0117] The photosensor bottom electrode 202 and the display element driver scanning electrode 402 are formed in the same layer. "Formed in the same layer" includes being formed of the same material, the same layer thickness, etc. The same applies below. The photosensor bottom electrode 202 and the display element driver scanning electrode 402 are formed simultaneously. This process is a metal electrode formation process in which the photosensor bottom electrode 202 and the display element driver scanning electrode 402 are formed simultaneously.

[0118] The photosensor direct signal readout electrode 311 and the display element driver signal electrode 403 are configured in the same layer. The photosensor direct signal readout electrode 311 and the display element driver signal electrode 403 are formed simultaneously. This process is a metal electrode formation process in which the photosensor direct signal readout electrode 311 and the display element driver signal electrode 403 are formed simultaneously.

[0119] The photosensor second transparent electrode 209 and the display element driving portion source / drain transparent electrode 403t are configured in the same layer. The photosensor second transparent electrode 209 and the display element driving portion source / drain transparent electrode 403t are formed simultaneously. This process is a transparent electrode formation process in which the photosensor second transparent electrode 209 and the display element driving portion source / drain transparent electrode 403t are formed simultaneously.

[0120] The photosensor second insulating film 207 and the display element driving section second interlayer insulating film 407 are configured from the same layer. The photosensor second insulating film 207 and the display element driving section second interlayer insulating film 407 are formed simultaneously. This step is an insulating film formation step in which the photosensor second insulating film 207 and the display element driving section second interlayer insulating film 407 are formed simultaneously.

[0121] (Variation 3) In the third embodiment, the photodiode 200 has the same configuration as the photodiode 200 according to the first embodiment. As a modification (modification 3) of the third embodiment, an example in which the photodiode 200 is of a direct drive type and has the same configuration as the photodiode 200 according to modification 1 of the first embodiment will be described with reference to FIGS. 30 to 32.

[0122] Fig. 30 is a circuit diagram showing an overall outline of the photosensing unit 102 according to Modification 3. In Fig. 30, the display element driving unit 400 is omitted. Fig. 31 is a plan view of the pixel unit 103. Fig. 32 is a cross-sectional view taken along line II in Fig. 31. The pixel unit 103 of the display 100 with a built-in two-dimensional photosensor has a photosensing unit 102 having a photodiode 200, a display element driving unit 400, and a display element 420.

[0123] The photodiode 200 according to Modification 3 has the same configuration as the photodiode 200 according to Modification 1. The display element driving section 400 according to the third embodiment has the same configuration as the display element driving section 400 according to Modification 1.

[0124] As shown in FIG. 30 , the anode of the photodiode 200 is connected to a plurality of photosensor bottom electrodes 202 arranged in the vertical direction. As shown in FIG. 32 , the photosensor bottom electrode 202 is formed on a photosensor first insulating film 204 and is a metal electrode, similar to the photosensor bottom electrode 202 shown in FIG. 17 . Hereinafter, layers with the same reference numerals as those described in FIGS. 1 to 26 are made of the same materials and therefore will not be described again. As shown in FIGS. 30 and 31 , the photosensor bottom electrode 202 extends in the vertical direction. As shown in FIG. 32 , the cathode of the photodiode 200 is formed by a photosensor first transparent electrode 208. The photosensor first transparent electrode 208 is connected to a photosensor direct signal readout electrode 311 via a photosensor second transparent electrode 209. The photosensor direct signal readout electrode 311 extends in the vertical direction as shown in FIGS. 30 and 31 . In FIGS. 30 and 31 , four rows and four columns of photosensors are provided. The photosensor direct signal readout electrodes 311 are provided corresponding to each column. For example, in FIGS. 30 to 32, four photosensor direct signal readout electrodes 311 are provided for each column, as indicated by reference numerals 311a to 311d. There are four electrodes per column, so 16 photosensor direct signal readout electrodes 311 are provided since there are four columns. The photosensor direct signal readout electrodes 311 are connected to a signal processing circuit 150, as shown in FIG. 30. The signal processing circuit 150 detects the in-plane distribution of the intensity of light incident on each photodiode 200 from the signal of each photodiode 200.

[0125] 30 to 32 has the advantage of not requiring the photosensor driving section thin film transistor 301. Apart from the glass substrate 1 on which the photosensing section 102 is mounted, the signal processing circuit 150 can be realized using a silicon integrated circuit (Si-IC).

[0126] The photosensor bottom electrode 202 and the display element driver signal electrode 403 are formed in the same layer. "Formed in the same layer" includes being formed from the same material, the same layer thickness, etc. The same applies below. The photosensor bottom electrode 202 and the display element driver signal electrode 403 are formed simultaneously. This process is a metal electrode formation process in which the photosensor bottom electrode 202 and the display element driver signal electrode 403 are formed simultaneously.

[0127] The photosensor direct signal readout electrode 311 and the display element driver signal electrode 403 are configured in the same layer. The photosensor direct signal readout electrode 311 and the display element driver signal electrode 403 are formed simultaneously. This process is a metal electrode formation process in which the photosensor direct signal readout electrode 311 and the display element driver signal electrode 403 are formed simultaneously.

[0128] The photosensor second insulating film 207 and the display element driving section second interlayer insulating film 407 are configured from the same layer. The photosensor second insulating film 207 and the display element driving section second interlayer insulating film 407 are formed simultaneously. This step is an insulating film formation step in which the photosensor second insulating film 207 and the display element driving section second interlayer insulating film 407 are formed simultaneously.

[0129] The photosensor third insulating film 210 on the photosensor second transparent electrode 209 and the display element driver final protective film 410 on the display element thin film transistor of the display element driver 400 are configured from the same layer. The photosensor third insulating film 210 on the photosensor second transparent electrode 209 and the display element driver final protective film 410 on the display element thin film transistor of the display element driver 400 are formed simultaneously. This process is an insulating film formation process in which the photosensor third insulating film 210 on the photosensor second transparent electrode 209 and the display element driver final protective film 410 on the display element thin film transistor of the display element driver 400 are formed simultaneously.

[0130] (Fourth embodiment) The third embodiment describes a direct drive system. A passive matrix system may also be employed. FIG. 33 is an overall circuit diagram of a passive matrix photosensing unit 102. A photosensor gate driver 130 applies a scanning signal to the photosensor bottom electrode 202. For example, the voltage during scanning is minus 1.0 V. The multiplexer 140 applies a voltage of, for example, plus 1.5 V, and a reverse bias voltage of 2.5 V is applied to the photodiode 200. As shown in FIG. 2, a photocurrent is generated according to the illuminance of each photodiode 200. The signal processing circuit 150 derives the light illuminance based on the generated photocurrent. When not scanning, a voltage of, for example, plus 1.9 V is applied to the photosensor bottom electrode 202. At this time, a forward voltage of 0.4 V is applied to the photodiode 200. At this time, as shown in FIG. 2, the photocurrent is suppressed regardless of the illuminance of each photodiode 200. The photocurrent from the photodiodes 200 being scanned is provided to the multiplexer 140 and the signal processing circuitry 150. By scanning the photosensor bottom electrodes 202, the illumination intensity at each photodiode 200 is estimated.

[0131] FIG. 34 is a plan view of a pixel unit 103 according to the fourth embodiment. FIG. 35 is a cross-sectional view of the pixel unit 103 according to the fourth embodiment. The simple matrix configuration shown in FIG. 34 is compared with the direct drive configuration shown in FIG. 28. In the simple matrix configuration shown in FIG. 34, there is only one electrode used for signal readout in the pixel unit 103, and it is possible to provide a photodiode 200 in each pixel unit 103. FIG. 29 is compared with FIG. 35. Four photosensor direct signal readout electrodes 311 are shown in FIG. 29. In contrast, there is only one photosensor simple matrix signal readout electrode 312 in FIG. 35. Other than this, there is no difference between the two in terms of layer configuration.

[0132] The layer structure in a simple matrix type will be described with reference to Figure 35. The photosensor bottom electrode 202 and the display element driver scanning electrode 402 are formed in the same layer. "Formed in the same layer" includes being formed of the same material, the same layer thickness, etc. The same applies below. The photosensor bottom electrode 202 and the display element driver scanning electrode 402 are formed simultaneously. This process is a metal electrode formation process in which the photosensor bottom electrode 202 and the display element driver scanning electrode 402 are formed simultaneously.

[0133] The photosensor simple matrix signal readout electrodes 312 and the display element driver signal electrodes 403 are configured in the same layer. The photosensor direct signal readout electrodes 311 and the display element driver signal electrodes 403 are formed simultaneously. This process is a metal electrode formation process in which the photosensor direct signal readout electrodes 311 and the display element driver signal electrodes 403 are formed simultaneously.

[0134] The photosensor second transparent electrode 209 and the display element driving portion source / drain transparent electrode 403t are configured in the same layer. The photosensor second transparent electrode 209 and the display element driving portion source / drain transparent electrode 403t are formed simultaneously. This process is a transparent electrode formation process in which the photosensor second transparent electrode 209 and the display element driving portion source / drain transparent electrode 403t are formed simultaneously.

[0135] The photosensor second insulating film 207 and the display element driving section second interlayer insulating film 407 are configured from the same layer. The photosensor second insulating film 207 and the display element driving section second interlayer insulating film 407 are formed simultaneously. This step is an insulating film formation step in which the photosensor second insulating film 207 and the display element driving section second interlayer insulating film 407 are formed simultaneously.

[0136] (Fifth embodiment) It is also preferable that the photosensor driving section 300 according to the second embodiment is of a direct driving type or a simple matrix driving type.

[0137] The direct drive type will be described with reference to Fig. 36, Fig. 37, and Fig. 27. Fig. 36 is a plan view of the pixel section 103. Fig. 37 is a cross-sectional view taken along line III-III in Fig. 36.

[0138] As shown in Fig. 37, the photosensor bottom electrode 202 and the display element driver scanning electrode 402 are formed in the same layer. The photosensor bottom electrode 202 must not be electrically connected to the display element driver scanning electrode 402. For this reason, the photosensor bottom electrode 202 is parallel to the display element driver scanning electrode 402 as shown in Fig. 36. The photosensor bottom electrode 202 extends left and right as shown in Figs. 27 and 36. As shown in Fig. 27, a reference voltage Vb is applied to the photosensor bottom electrode 202, as in the third embodiment.

[0139] As shown in FIG. 37 , the cathode of the photodiode 200 is formed by the photosensor first transparent electrode 208. As shown in FIGS. 36 and 37 , the photosensor first transparent electrode 208 is connected to the photosensor direct signal readout electrode 311. The photosensor direct signal readout electrode 311 extends in the vertical direction as shown in FIGS. 27 and 36 . In FIGS. 27 , 36 , and 37 , four rows and four columns of photosensors are provided. The photosensor direct signal readout electrodes 311 are provided corresponding to each row. For example, in FIGS. 27 , 36 , and 37 , four photosensor direct signal readout electrodes 311 are provided for each column, as indicated by reference numerals 311 a to 311 d. Since there are four columns, four electrodes per column, a total of 16 photosensor direct signal readout electrodes 311 are formed. The photosensor direct signal readout electrodes 311 are connected to the signal processing circuit 150 as shown in FIG. 27 . The signal processing circuit 150 detects the in-plane distribution of the intensity of light incident on each photodiode 200 from the signal of each photodiode 200 .

[0140] 27, 36, and 37 has the advantage of not requiring the photosensor driving unit thin-film transistor 301. Apart from the glass substrate 1 on which the photosensing unit 102 is mounted, the signal processing circuit 150 can be realized using a silicon integrated circuit (Si-IC).

[0141] The photosensor bottom electrode 202 and the display element driver scanning electrode 402 are formed in the same layer. "Formed in the same layer" includes being formed of the same material, the same layer thickness, etc. The same applies below. The photosensor bottom electrode 202 and the display element driver scanning electrode 402 are formed simultaneously. This process is a metal electrode formation process in which the photosensor bottom electrode 202 and the display element driver scanning electrode 402 are formed simultaneously.

[0142] The photosensor semiconductor layer 205 and the display element driver semiconductor layer 405 are formed in the same layer. "Formed in the same layer" includes being formed of the same material, the same layer thickness, etc. The same applies below. The photosensor semiconductor layer 205 and the display element driver semiconductor layer 405 are formed simultaneously. This process is a semiconductor layer formation process in which the photosensor semiconductor layer 205 and the display element driver semiconductor layer 405 are formed simultaneously.

[0143] The photosensor ohmic contact layer 206 and the display element driver ohmic contact layer 406 are configured from the same layer. The photosensor ohmic contact layer 206 and the display element driver ohmic contact layer 406 are formed simultaneously. This process is an ohmic contact layer formation process in which the photosensor ohmic contact layer 206 and the display element driver ohmic contact layer 406 are formed simultaneously.

[0144] The photosensor first transparent electrode 208 and the display element driving portion source / drain transparent electrode 403t are configured in the same layer. The photosensor first transparent electrode 208 and the display element driving portion source / drain transparent electrode 403t are formed simultaneously. This process is a transparent electrode formation process in which the photosensor first transparent electrode 208 and the display element driving portion source / drain transparent electrode 403t are formed simultaneously.

[0145] The photosensor direct signal readout electrode 311 and the display element driver signal electrode 403 are configured in the same layer. The photosensor direct signal readout electrode 311 and the display element driver signal electrode 403 are formed simultaneously. This process is a metal electrode formation process in which the photosensor direct signal readout electrode 311 and the display element driver signal electrode 403 are formed simultaneously.

[0146] The photosensor second insulating film 207 and the display element driving section final protective film 410 are configured from the same layer. The photosensor second insulating film 207 and the display element driving section final protective film 410 are formed simultaneously. This step is an insulating film formation step in which the photosensor second insulating film 207 and the display element driving section final protective film 410 are formed simultaneously.

[0147] (Variation 4)

[0148] A simple matrix driving type will be described with reference to Fig. 38, Fig. 39, and Fig. 33. Fig. 38 is a plan view of a pixel section 103. Fig. 39 is a cross-sectional view taken along line III-III in Fig. 38.

[0149] As shown in Fig. 39, the photosensor bottom electrode 202 and the display element driver scanning electrode 402 are formed in the same layer. The photosensor bottom electrode 202 must not be electrically connected to the display element driver scanning electrode 402. For this reason, the photosensor bottom electrode 202 is parallel to the display element driver scanning electrode 402, as shown in Fig. 38. The photosensor bottom electrode 202 extends left and right, as shown in Figs. 33 and 38. The photosensor bottom electrode 202 is scanned by simple matrix driving, as in the fourth embodiment, and photocurrent is detected through the photosensor simple matrix signal readout electrode 312.

[0150] As shown in FIG. 39 , the cathode of the photodiode 200 is formed by the photosensor first transparent electrode 208. As shown in FIGS. 38 and 39 , the photosensor first transparent electrode 208 partially overlaps and is electrically connected to the photosensor simple-matrix signal readout electrode 312. As shown in FIGS. 33 and 38 , the photosensor simple-matrix signal readout electrode 312 extends in the vertical direction. The photosensor simple-matrix signal readout electrode 312 is provided corresponding to each column. For example, in FIGS. 33 , 38 , and 39 , the photosensor simple-matrix signal readout electrode 312 is provided in each pixel unit 103. The photosensor simple-matrix signal readout electrode 312 is connected to the signal processing circuit 150 as shown in FIG. 33 . The signal processing circuit 150 detects the in-plane distribution of the intensity of light incident on each photodiode 200 from the signal of each photodiode 200. Details of the driving are the same as those in the fourth embodiment and have been described in the fourth embodiment, so a description thereof will be omitted.

[0151] The photosensor bottom electrode 202 and the display element driver scanning electrode 402 are formed in the same layer. "Formed in the same layer" includes being formed of the same material, the same layer thickness, etc. The same applies below. The photosensor bottom electrode 202 and the display element driver scanning electrode 402 are formed simultaneously. This process is a metal electrode formation process in which the photosensor bottom electrode 202 and the display element driver scanning electrode 402 are formed simultaneously.

[0152] The photosensor semiconductor layer 205 and the display element driver semiconductor layer 405 are formed in the same layer. "Formed in the same layer" includes being formed of the same material, the same layer thickness, etc. The same applies below. The photosensor semiconductor layer 205 and the display element driver semiconductor layer 405 are formed simultaneously. This process is a semiconductor layer formation process in which the photosensor semiconductor layer 205 and the display element driver semiconductor layer 405 are formed simultaneously.

[0153] The photosensor ohmic contact layer 206 and the display element driver ohmic contact layer 406 are configured from the same layer. The photosensor ohmic contact layer 206 and the display element driver ohmic contact layer 406 are formed simultaneously. This process is an ohmic contact layer formation process in which the photosensor ohmic contact layer 206 and the display element driver ohmic contact layer 406 are formed simultaneously.

[0154] The photosensor first transparent electrode 208 and the display element driving portion source / drain transparent electrode 403t are configured in the same layer. The photosensor first transparent electrode 208 and the display element driving portion source / drain transparent electrode 403t are formed simultaneously. This process is a transparent electrode formation process in which the photosensor first transparent electrode 208 and the display element driving portion source / drain transparent electrode 403t are formed simultaneously.

[0155] The photosensor simple matrix signal readout electrodes 312 and the display element driver signal electrodes 403 are configured in the same layer. The photosensor simple matrix signal readout electrodes 312 and the display element driver signal electrodes 403 are formed simultaneously. This process is a metal electrode formation process in which the photosensor simple matrix signal readout electrodes 312 and the display element driver signal electrodes 403 are formed simultaneously.

[0156] The photosensor second insulating film 207 and the display element driving section final protective film 410 are configured from the same layer. The photosensor second insulating film 207 and the display element driving section final protective film 410 are formed simultaneously. This step is an insulating film formation step in which the photosensor second insulating film 207 and the display element driving section final protective film 410 are formed simultaneously.

[0157] Although not explained here, wiring is reconnected to extract signals. Contact holes are provided in the insulating layers as needed to connect different conductive layers.

[0158] The present disclosure allows various embodiments and modifications without departing from the broad spirit and scope of the present invention. Furthermore, the above-described embodiments are intended to illustrate the present invention and do not limit the scope of the present invention. That is, the scope of the present invention is defined by the claims, not the embodiments. Various modifications made within the scope of the claims and the meaning of the disclosure equivalent thereto are considered to be within the scope of the present invention.

[0159] The two-dimensional photosensor-embedded display 100 according to the embodiment described above provides the following advantages.

[0160] (1) A two-dimensional photosensor-embedded display 100 includes a glass substrate 1, a photosensing unit 102 arranged two-dimensionally on the glass substrate 1, and a display unit 101. The photosensing unit 102 has a photodiode 200 that generates a current based on external light L. The display unit 101 has a display element 420 that switches its display by applying a voltage or current, and a display element driver 400 that transmits a voltage or current to the display element 420 based on a display signal. The photodiode 200 has a photosensor bottom electrode 202, a photosensor semiconductor layer 205, a photosensor ohmic contact layer 206, and a photosensor first transparent electrode 208. 5 or the interface between the photosensor semiconductor layer 205 and the photosensor first transparent electrode 208, a Schottky diode-type photodiode 200 is formed between the photosensor bottom electrode 202 and the photosensor first transparent electrode 208. The display element drive section 400 has a display element drive section thin film transistor 401, and the display element drive section thin film transistor 401 has a display element drive section first gate electrode 402a, a display element drive section interlayer insulating film 404, a display element drive section semiconductor layer 405, a display element drive section source electrode 403a, and a display element drive section drain electrode 403c, and the photosensor bottom electrode 202 and the display element drive section first gate electrode 402a are formed in the same layer.

[0161] This provides a display incorporating a two-dimensional photosensor based on the structure of a thin film transistor for a display.

[0162] (2) In the two-dimensional photosensor-embedded display 100 of (1), the photosensing unit 102 further includes a photosensor driving unit 300 that reads out signals from the photodiode 200, and the photosensor driving unit 300 includes a photosensor driving unit thin-film transistor 301, and the photosensor driving unit thin-film transistor 301 includes a photosensor driving unit gate electrode 302a, a photosensor driving unit interlayer insulating film 304, a photosensor driving unit semiconductor layer 305, a photosensor driving unit source electrode 303a, and a photosensor driving unit drain electrode 303c, and the photosensor bottom electrode 202, the photosensor driving unit gate electrode 302a, and the display element driving unit first gate electrode 402a are configured in the same layer.

[0163] This provides a display incorporating a two-dimensional photosensor based on the structure of a thin film transistor for a display.

[0164] (3) In the two-dimensional photosensor-embedded display 100 of (2), the photosensor driver interlayer insulating film 304 and the display element driver interlayer insulating film 404 are formed in the same layer.

[0165] This makes the characteristics resulting from the insulating film equivalent, resulting in high reliability.

[0166] (4) In the two-dimensional photosensor-embedded display 100 of (2) or (3), the photosensor driving semiconductor layer 305 and the display element driving semiconductor layer 405 are configured in the same layer.

[0167] This makes the characteristics of the drive section due to the semiconductor layer equivalent, and the drive conditions are similar, making it possible to standardize the withstand voltage of the drive IC.

[0168] (5) In any one of the two-dimensional photosensor-embedded displays 100 of (2) to (4), the photosensor driving unit source electrode 303a, the photosensor driving unit drain electrode 303c, the display element driving unit source electrode 403a, and the display element driving unit drain electrode 403c are configured in the same layer.

[0169] This makes the patterning precision of the source electrodes and drain electrodes the same in the driving units in the two-dimensional photosensor-embedded display 100. As a result, the characteristics of the driving units become equivalent, and the driving conditions become the same.

[0170] (6) In any one of the two-dimensional photosensor-embedded displays 100 of (2) to (5), the photosensor driving unit drain electrode 303c has a photosensor driving unit drain transparent electrode 303d made of a transparent electrode, and is formed in the same layer as the photosensor first transparent electrode 208.

[0171] This makes it possible to commonly determine the transmittance and conductivity of the transparent electrodes.

[0172] (7) In any one of the two-dimensional photosensor-embedded displays 100 of (2) to (6), the photosensor semiconductor layer 205, the photosensor driving section semiconductor layer 305, and the display element driving section semiconductor layer 405 are configured in the same layer.

[0173] This allows for the integrated formulation of semiconductor layers that simultaneously satisfy the characteristics required for the photodiode 200, the photosensor driving section 300, and the display element driving section 400. This also stabilizes the characteristics of the two-dimensional photosensor-embedded display 100.

[0174] (8) In any one of the two-dimensional photosensor-embedded displays 100 of (2) to (7), the photosensor driving section thin-film transistor 301 has a photosensor driving section ohmic contact layer 306 which is an ohmic contact layer, the display element driving section thin-film transistor 401 has a display element driving section ohmic contact layer 406 which is an ohmic contact layer, and the photosensor ohmic contact layer 206, the photosensor driving section ohmic contact layer 306, and the display element driving section ohmic contact layer 406 are composed of the same layer.

[0175] This allows the same ohmic contact to be achieved among the photodiode 200, the photosensor driving section 300, and the display element driving section 400. Appropriate ohmic contact layers are selectively realized, and as a result, a two-dimensional photo sensor-embedded display with little variation in characteristics can be realized.

[0176] (9) In any one of the two-dimensional photosensor-embedded displays 100 of (2) to (8), the photosensor driving unit 300 has a photosensor driving unit drain transparent electrode 303d which is a photosensor driving unit drain electrode 303c made of a transparent electrode, the display element driving unit 400 has a display element driving unit drain transparent electrode 403d made of a transparent electrode, and the photosensor first transparent electrode 208, the photosensor driving unit drain transparent electrode 303d, and the display element driving unit drain transparent electrode 403d are configured in the same layer.

[0177] This allows the photodiode 200, the photosensor driving section 300, and the display element driving section 400 to be connected to one another via the transparent electrode layer. It also makes it possible to commonly set the transmittance and electrical conductivity of the transparent electrodes.

[0178] (10) In the two-dimensional photosensor-embedded display 100 of any one of (1) to (9), the photosensor semiconductor layer 205 and the display element driver semiconductor layer 405 are configured in the same layer.

[0179] This makes it possible to simultaneously optimize the photodiode 200 and the display element driver 400 by optimizing one semiconductor layer.

[0180] (11) In any one of the two-dimensional photosensor-embedded displays 100 of (1) to (10), the display element driver thin-film transistor 401 has a display element driver ohmic contact layer 406 which is an ohmic contact layer, and the photosensor ohmic contact layer 206 and the display element driver ohmic contact layer 406 are formed from the same layer.

[0181] This makes it possible to simultaneously optimize the photodiode 200 and the display element driver 400 by optimizing one ohmic contact layer.

[0182] (12) In any one of the two-dimensional photosensor-embedded displays 100 of (1) to (11), the display element driving unit 400 has a display element driving unit drain transparent electrode 403d made of a transparent electrode, and the photosensor first transparent electrode 208 and the display element driving unit drain transparent electrode 403d are configured in the same layer.

[0183] This makes it possible to simultaneously optimize the photodiode 200 and the display element driver 400 by optimizing one layer of transparent electrode.

[0184] (13) A two-dimensional photosensor-embedded display 100 includes a glass substrate 1, a photosensing unit 102 arranged two-dimensionally on the glass substrate 1, and a display unit 101. The photosensing unit 102 has a photodiode 200 that generates a current based on external light L. The display unit 101 has a display element 420 that switches its display by applying a voltage or current, and a display element driver 400 that transmits a voltage or current to the display element 420 based on a display signal. The photodiode 200 has a photosensor bottom electrode 202, a photosensor semiconductor layer 205, a photosensor ohmic contact layer 206, and a photosensor first transparent electrode 208 that are arranged on the glass substrate 1 side. 5 or the interface between the photosensor semiconductor layer 205 and the photosensor first transparent electrode 208, a Schottky diode-type photodiode 200 is formed between the photosensor bottom electrode 202 and the photosensor first transparent electrode 208. The display element drive section 400 has a display element drive section thin film transistor 401, and the display element drive section thin film transistor 401 has a display element drive section first gate electrode 402a, a display element drive section interlayer insulating film 404, a display element drive section semiconductor layer 405, a display element drive section source electrode 403a, and a display element drive section drain electrode 403c, and the photosensor bottom electrode 202, the display element drive section source electrode 403a, and the display element drive section drain electrode 403c are formed in the same layer.

[0185] This allows the photosensor bottom electrode 202 of the photodiode 200 to extend parallel to the display element driver signal electrode 403. This increases the degree of freedom in the layout of the driver peripheral circuitry.

[0186] (14) In the two-dimensional photosensor-embedded display 100 of (13), the photosensing unit 102 further includes a photosensor driving unit 300 that reads out signals from the photodiode 200. The photosensor driving unit 300 includes a photosensor driving unit thin-film transistor 301. The photosensor driving unit thin-film transistor 301 includes a photosensor driving unit gate electrode 302a, a photosensor driving unit interlayer insulating film 304, a photosensor driving unit semiconductor layer 305, a photosensor driving unit source electrode 303a, and a photosensor driving unit drain electrode 303c. The photosensor bottom electrode 202, the photosensor driving unit source electrode 303a, the photosensor driving unit drain electrode 303c, the display element driving unit source electrode 403a, and the display element driving unit drain electrode 403c are configured in the same layer.

[0187] This allows the photosensor bottom electrode 202 of the photodiode 200 to extend parallel to the photosensor driver signal readout electrode 303 and the display element driver signal electrode 403. This increases the degree of freedom in the layout of the driver peripheral circuits.

[0188] (15) In the two-dimensional photosensor-embedded display 100 of (14), the photosensor driver interlayer insulating film 304 and the display element driver interlayer insulating film 404 are formed in the same layer.

[0189] This makes the characteristics resulting from the insulating film equivalent, resulting in high reliability.

[0190] (16) In the two-dimensional photosensor-embedded display 100 of (14) or (15), the photosensor driving semiconductor layer 305 and the display element driving semiconductor layer 405 are formed in the same layer.

[0191] This allows for the integrated formulation of semiconductor layers that simultaneously satisfy the characteristics required for the photosensor driving section 300 and the display element driving section 400. This also stabilizes the characteristics of the two-dimensional photosensor-embedded display 100.

[0192] (17) In any one of the two-dimensional photosensor-embedded displays 100 of (14) to (16), the photosensor driving unit source electrode 303a, the photosensor driving unit drain electrode 303c, the display element driving unit source electrode 403a, and the display element driving unit drain electrode 403c are configured in the same layer.

[0193] This makes the patterning precision of the source electrodes and drain electrodes the same in the driving units in the two-dimensional photosensor-embedded display 100. As a result, the characteristics of the driving units become equivalent, and the driving conditions become the same.

[0194] (18) In the two-dimensional photosensor-embedded display 100 of any one of (14) to (17), the photosensor driver drain electrode 303c has a transparent electrode layer and is formed in the same layer as the photosensor first transparent electrode 208.

[0195] This allows the photodiode 200 and the photosensor driving section 300 to be connected via the transparent electrode layer. It becomes possible to commonly determine the transmittance and conductivity of the transparent electrodes, for example.

[0196] (19) A method for manufacturing a two-dimensional photosensor-embedded display 100, the two-dimensional photosensor-embedded display 100 comprising a glass substrate 1, a photosensing section 102 arranged two-dimensionally on the glass substrate 1, and a display section 101, the photosensing section 102 having a photodiode 200 that generates a current based on external light L, the display section 101 having a display element 420 that switches display by application of a voltage or current, and a display element driving section 400 that transmits a voltage or current to the display element 420 based on a display signal, the photodiode 200 having a photosensor bottom electrode 202, a photosensor semiconductor layer 205, a photosensor ohmic contact layer 206, and a photosensor first transparent electrode 208, a Schottky barrier portion S at the interface between the photo sensor bottom electrode 202 and the photosensor semiconductor layer 205 or at the interface between the photosensor semiconductor layer 205 and the photosensor first transparent electrode 208, whereby a Schottky diode-type photodiode 200 is formed between the photosensor bottom electrode 202 and the photosensor first transparent electrode 208; a display element driver 400 includes a display element driver thin film transistor 401, which includes a display element driver first gate electrode 402a, a display element driver interlayer insulating film 404, a display element driver semiconductor layer 405, a display element driver source electrode 403a, and a display element driver drain electrode 403c, and the method includes a step of simultaneously forming the photosensor bottom electrode 202 and the display element driver first gate electrode 402a.

[0197] This provides a display incorporating a two-dimensional photosensor based on the structure of a display-use thin-film transistor. An electrode layer is formed that satisfies both the light-shielding properties required for the photosensor bottom electrode 202 and the low resistance required for the display element driver first gate electrode 402a, enabling centralized management of characteristics. As a result, a two-dimensional photosensor-embedded display 100 with minimal variation in characteristics is realized.

[0198] (20) In the method for manufacturing the two-dimensional photosensor-embedded display 100 of (19), the photosensing unit 102 further includes a photosensor driving unit 300 that reads out a signal from the photodiode 200, the photosensor driving unit 300 includes a photosensor driving unit thin-film transistor 301, the photosensor driving unit thin-film transistor 301 includes a photosensor driving unit gate electrode 302a, a photosensor driving unit interlayer insulating film 304, a photosensor driving unit semiconductor layer 305, a photosensor driving unit source electrode 303a, and a photosensor driving unit drain electrode 303c, and includes a step of simultaneously forming the photosensor bottom electrode 202, the photosensor driving unit gate electrode 302a, and the display element driving unit first gate electrode 402a.

[0199] This allows the formation of an electrode layer that satisfies both the light-shielding properties required for the photosensor bottom electrode 202 and the low resistance required for the photosensor driver gate electrode 302a and the display element driver first gate electrode 402a, making it possible to centrally manage the characteristics, thereby achieving a two-dimensional photosensor-embedded display 100 with little variation in characteristics.

[0200] (21) The method for manufacturing the two-dimensional photosensor-embedded display 100 of (20) includes the step of simultaneously forming the photosensor driver interlayer insulating film 304 and the display element driver interlayer insulating film 404.

[0201] This makes the characteristics resulting from the insulating film equivalent, resulting in high reliability.

[0202] (22) The method for manufacturing the two-dimensional photosensor-embedded display 100 according to (20) or (21) includes a step of simultaneously forming the photosensor driving semiconductor layer 305 and the display element driving semiconductor layer 405.

[0203] This makes the characteristics of the drive section due to the semiconductor layer equivalent, and the drive conditions are similar, making it possible to standardize the withstand voltage of the drive IC.

[0204] (23) A method for manufacturing any one of the two-dimensional photosensor-embedded displays 100 of (20) to (22) includes a step of simultaneously forming a photosensor driving unit source electrode 303a, a photosensor driving unit drain electrode 303c, a display element driving unit source electrode 403a, and a display element driving unit drain electrode 403c.

[0205] This makes the patterning precision of the source electrodes and drain electrodes the same in the driving units in the two-dimensional photosensor-embedded display 100. As a result, the characteristics of the driving units become equivalent, and the driving conditions become the same.

[0206] (24) A method for manufacturing a two-dimensional photosensor-embedded display 100 according to any one of (20) to (23) includes a step in which the photosensor driving unit drain electrode 303c has a photosensor driving unit drain transparent electrode 303d made of a transparent electrode and is formed simultaneously with the photosensor first transparent electrode 208.

[0207] This makes it possible to commonly determine the transmittance and conductivity of the transparent electrodes.

[0208] (25) The method for manufacturing the two-dimensional photosensor-embedded display 100 according to (20) to (24) includes the step of simultaneously forming the photosensor semiconductor layer 205, the photosensor driver semiconductor layer 305, and the display element driver semiconductor layer 405.

[0209] This allows for the integrated formulation of semiconductor layers that simultaneously satisfy the characteristics required for the photodiode 200, the photosensor driving section 300, and the display element driving section 400. This also stabilizes the characteristics of the two-dimensional photosensor-embedded display 100.

[0210] (26) In the method for manufacturing the two-dimensional photosensor-embedded display 100 according to any one of (20) to (25), the photosensor driving section thin-film transistor 301 has a photosensor driving section ohmic contact layer 306 which is an ohmic contact layer, the display element driving section thin-film transistor 401 has a display element driving section ohmic contact layer 406 which is an ohmic contact layer, and the method includes a step of simultaneously forming the photosensor ohmic contact layer 206, the photosensor driving section ohmic contact layer 306, and the display element driving section ohmic contact layer 406.

[0211] This allows the photodiode 200, the photosensor driver 300, and the display element driver 400 to have similar ohmic contact. Appropriate ohmic contact layers are selectively realized. As a result, a two-dimensional photosensor-embedded display 100 with little variation in characteristics can be realized.

[0212] (27) In the manufacturing method of any one of the two-dimensional photosensor-embedded display 100 of (20) to (26), the photosensor driving unit 300 has a photosensor driving unit drain transparent electrode 303d layer which is a photosensor driving unit drain electrode 303c made of a transparent electrode, the display element driving unit 400 has a display element driving unit drain transparent electrode 403d layer made of a transparent electrode, and the photosensor first transparent electrode 208, the photosensor driving unit drain transparent electrode 303d layer, and the display element driving unit drain transparent electrode 403d layer are simultaneously formed.

[0213] This allows the photodiode 200, the photosensor driving section 300, and the display element driving section 400 to be connected to one another via the transparent electrode layer. It also makes it possible to commonly set the transmittance and electrical conductivity of the transparent electrodes.

[0214] (28) In the method of manufacturing the two-dimensional photosensor-embedded display 100 according to (20) to (27), the photosensor semiconductor layer 205 and the display element driver semiconductor layer 405 are formed simultaneously.

[0215] This allows the characteristics of the photosensing section 102 and the display element driving section 400 to be managed in a unified manner.

[0216] (29) In the method for manufacturing the two-dimensional photosensor-embedded display 100 according to any one of (20) to (28), the display element driver thin film transistor 401 has a display element driver ohmic contact layer 406 which is an ohmic contact layer; The photosensor ohmic contact layer 206 and the display element driver ohmic contact layer 406 are formed simultaneously.

[0217] This allows the ohmic contact characteristics of the photosensing section 102 and the display element driving section 400 to be managed in an integrated manner.

[0218] (30) In the manufacturing method of any one of the two-dimensional photosensor-embedded display 100 of (20) to (29), the display element driving unit 400 has a display element driving unit drain transparent electrode 403d made of a transparent electrode, and the photosensor first transparent electrode 208 and the display element driving unit source drain transparent electrode 403t are formed simultaneously.

[0219] This allows the transparency characteristics of the photosensing section 102 and the display element driving section 400 to be managed in a unified manner.

[0220] (31) A method for manufacturing a two-dimensional photosensor-embedded display 100, the two-dimensional photosensor-embedded display 100 comprising a glass substrate 1, a photosensing section 102 arranged two-dimensionally on the glass substrate 1, and a display section 101, the photosensing section 102 having a photodiode 200 that generates a current based on external light L, the display section 101 having a display element 420 that switches its display by application of a voltage or current, and a display element driving section 400 that transmits a voltage or current to the display element 420 based on a display signal, the photodiode 200 having a photosensor bottom electrode 202, a photosensor semiconductor layer 205, a photosensor ohmic contact layer 206, and a photosensor first transparent electrode 208 arranged on the glass substrate 1 side, Based on the Schottky barrier at the interface between the photosensor bottom electrode 202 and the photosensor semiconductor layer 205 or at the interface between the photosensor semiconductor layer 205 and the photosensor first transparent electrode 208, a Schottky diode-type photodiode 200 is formed between the photosensor bottom electrode 202 and the photosensor first transparent electrode 208, and the display element driver 400 has a display element driver thin film transistor 401, which has a display element driver first gate electrode 402a, a display element driver interlayer insulating film 404, a display element driver semiconductor layer 405, a display element driver source electrode 403a, and a display element driver drain electrode 403c, and the photosensor bottom electrode 202, the display element driver source electrode 403a, and the display element driver drain electrode 403c are formed simultaneously.

[0221] This allows the photosensor bottom electrode 202 of the photodiode 200 to extend parallel to the display element driver signal electrode 403. This increases the degree of freedom in the layout of the driver peripheral circuitry.

[0222] (32) In the manufacturing method of the two-dimensional photosensor-embedded display 100 of (31), the photosensing unit 102 further includes a photosensor driving unit 300 that reads out signals from the photodiode 200, and the photosensor driving unit 300 includes a photosensor driving unit thin-film transistor 301, and the photosensor driving unit thin-film transistor 301 includes a photosensor driving unit gate electrode 302a, a photosensor driving unit interlayer insulating film 304, a photosensor driving unit semiconductor layer 305, a photosensor driving unit source electrode 303a, and a photosensor driving unit drain electrode 303c, and the photosensor bottom electrode 202, the photosensor driving unit source electrode 303a, the photosensor driving unit drain electrode 303c, the display element driving unit source electrode 403a, and the display element driving unit drain electrode 403c are simultaneously formed.

[0223] This allows the photosensor bottom electrode 202 of the photodiode 200 to extend parallel to the photosensor driver signal readout electrode 303 and the display element driver signal electrode 403. This increases the degree of freedom in the layout of the driver peripheral circuits.

[0224] (33) The method for manufacturing the two-dimensional photosensor-embedded display 100 in (32) includes the step of simultaneously forming the photosensor driver interlayer insulating film 304 and the display element driver interlayer insulating film 404.

[0225] This makes the characteristics resulting from the insulating film equivalent, resulting in high reliability.

[0226] (34) The method for manufacturing the two-dimensional photosensor-embedded display 100 according to (32) or (33) includes a step of simultaneously forming the photosensor driving semiconductor layer 305 and the display element driving semiconductor layer 405.

[0227] This allows for the integrated formulation of semiconductor layers that simultaneously satisfy the characteristics required for the photosensor driving section 300 and the display element driving section 400. This also stabilizes the characteristics of the two-dimensional photosensor-embedded display 100.

[0228] (35) A method for manufacturing a two-dimensional photosensor-embedded display 100 according to any one of (32) to (34) includes a step of simultaneously forming a photosensor driving unit source electrode 303a, a photosensor driving unit drain electrode 303c, a display element driving unit source electrode 403a, and a display element driving unit drain electrode 403c.

[0229] This makes the patterning precision of the source electrodes and drain electrodes the same in the driving units in the two-dimensional photosensor-embedded display 100. As a result, the characteristics of the driving units become equivalent, and the driving conditions become the same.

[0230] (36) The method for manufacturing the two-dimensional photosensor-embedded display 100 according to any one of (32) to (35) includes a step in which the photosensor driving section drain electrode 303c has a transparent electrode layer and is formed simultaneously with the photosensor first transparent electrode 208.

[0231] This allows the photodiode 200 and the photosensor driving section 300 to be connected via the transparent electrode layer. It becomes possible to commonly determine the transmittance and conductivity of the transparent electrodes, for example. [Explanation of symbols]

[0232] 1. Glass substrate 1a Bottom glass substrate 1b Top glass substrate 100 Display with built-in two-dimensional photosensor 101 Display section 102 Photo-sensing unit 103 Pixel section 130 Photosensor Gate Driver 140 Multiplexer 150 Signal Processing Circuit 151 Operational Amplifier 152 Reset terminal 160 Display gate driver 170 Display source driver 200 photodiodes 202 Photosensor bottom electrode 202t Photosensor bottom transparent electrode 204 photosensor first insulating film 205 Photosensor semiconductor layer 206 Photosensor ohmic contact layer 207 Photosensor second insulating film 208 Photosensor first transparent electrode 209 Photosensor second transparent electrode 210 photosensor third insulating film 212 Photosensor fourth insulating film 300 Photo sensor drive unit 301 Photo sensor driver thin film transistor 302 Photosensor driver scanning electrode 302a: photosensor driving section first gate electrode 303 Photo sensor driver signal readout electrode 303a Photo sensor driver source electrode 303b Photo sensor driver source transparent electrode 303c Photosensor driver drain electrode 303d Photosensor driver drain transparent electrode 303t Photo sensor driver source / drain transparent electrode 304 Photo sensor driver interlayer insulating film 305 Photosensor driving part semiconductor layer 306 Photosensor driver ohmic contact layer 307 Photosensor driver second interlayer insulating film 308 Photosensor driving part second gate electrode 309 Photosensor driver second gate transparent electrode 310 Photosensor drive unit final protective film 311 Photosensor direct signal readout electrode 311t Photosensor direct signal readout transparent electrode 312 Photosensor simple matrix signal readout electrode 400 Display element driver 401 Display element driver thin film transistor 402 Display element driver scanning electrode 402a Display element driving section first gate electrode 403 Display element driver signal electrode 403t Display element driver source / drain transparent electrode 403a Display element driver source electrode 403b Display element driver source transparent electrode 403c Display element driver drain electrode 403d Display element driver drain transparent electrode 404 Display element driver interlayer insulating film 405 Display element driver semiconductor layer 406 Display element driver ohmic contact layer 407 Display element driver second interlayer insulating film 408 Display element driver second gate electrode 409 Display element driver second gate transparent electrode 410 Display element driver final protective film 411 Display element driver common electrode 412 Display element interlayer insulating film 420 Display element 421 Display element comb electrode 422 Liquid crystal layer CE1 Photo sensor driver channel etch CE2 Display element driver channel etch section CH1 Display element driver contact hole CH2 photosensor drive contact hole RM1 Photosensor first insulating film removal section RM2 Photosensor second insulating film removal area L External light S Schottky barrier Va reference voltage section

Claims

1. A two-dimensional photosensor-embedded display, A glass substrate; a photosensing unit arranged two-dimensionally on the glass substrate; a display unit, the photosensing unit has a photodiode that generates a current based on external light, the display unit includes a display element that changes its display when a voltage or a current is applied, and a display element driver that transmits a voltage or a current to the display element based on a display signal; the photodiode has a photosensor bottom electrode, a photosensor semiconductor layer, a photosensor ohmic contact layer, and a photosensor transparent electrode, and a Schottky diode type photodiode is formed between the photosensor bottom electrode and the photosensor transparent electrode based on a Schottky barrier portion at an interface between the photosensor bottom electrode and the photosensor semiconductor layer or at an interface between the photosensor semiconductor layer and the photosensor transparent electrode, the display element driver has a display element driver thin film transistor, the display element driver thin film transistor includes a display element driver gate electrode, a display element driver interlayer insulating film, a display element driver semiconductor layer, a display element driver source electrode, and a display element driver drain electrode; the photosensor bottom electrode and the display element driver gate electrode are formed in the same layer; Display with built-in two-dimensional photosensor.

2. the photosensing unit further includes a photosensor driving unit that reads out a signal from the photodiode, the photosensor driving unit has a photosensor driving unit thin film transistor; the photosensor driver thin film transistor includes a photosensor driver gate electrode, a photosensor driver interlayer insulating film, a photosensor driver semiconductor layer, a photosensor driver source electrode, and a photosensor driver drain electrode; the photosensor bottom electrode, the photosensor driving section gate electrode, and the display element driving section gate electrode are formed in the same layer; The two-dimensional photosensor-embedded display according to claim 1 .

3. the photosensor driving portion interlayer insulating film and the display element driving portion interlayer insulating film are formed in the same layer; The two-dimensional photosensor-embedded display according to claim 2 .

4. the photosensor driving semiconductor layer and the display element driving semiconductor layer are formed in the same layer; 4. The two-dimensional photosensor-embedded display according to claim 2 or 3.

5. the source electrode of the photosensor driving section, the drain electrode of the photosensor driving section, the source electrode of the display element driving section, and the drain electrode of the display element driving section are formed in the same layer; 4. The two-dimensional photosensor-embedded display according to claim 2 or 3.

6. The photosensor driver drain electrode has a photosensor driver drain transparent electrode made of a transparent electrode, and is formed in the same layer as the photosensor transparent electrode.

4. The two-dimensional photosensor-embedded display according to claim 2 or 3.

7. the photosensor semiconductor layer, the photosensor driving section semiconductor layer, and the display element driving section semiconductor layer are configured in the same layer; The two-dimensional photosensor-embedded display according to claim 2 .

8. the photosensor driver thin film transistor has a photosensor driver ohmic contact layer that is an ohmic contact layer, the display element driver thin film transistor has an ohmic contact layer which is an ohmic contact layer, the photosensor ohmic contact layer, the photosensor driving unit ohmic contact layer, and the display element driving unit ohmic contact layer are formed of the same layer; 8. The two-dimensional photosensor-embedded display according to claim 2 or 7.

9. the photosensor driving unit has a photosensor driving unit drain transparent electrode which is the photosensor driving unit drain electrode made of a transparent electrode, the display element driving unit has a display element driving unit drain transparent electrode made of a transparent electrode, and the photosensor transparent electrode, the photosensor driving unit drain transparent electrode, and the display element driving unit drain transparent electrode are formed in the same layer; 8. The two-dimensional photosensor-embedded display according to claim 2 or 7.

10. The photosensor semiconductor layer and the display element driver semiconductor layer are formed in the same layer.

3. The two-dimensional photosensor-embedded display according to claim 1 or 2.

11. the display element driver thin film transistor has an ohmic contact layer which is an ohmic contact layer, the photosensor ohmic contact layer and the display element driver ohmic contact layer are formed of the same layer; 3. The two-dimensional photosensor-embedded display according to claim 1 or 2.

12. the display element driver has a display element driver drain transparent electrode made of a transparent electrode, the photosensor transparent electrode and the display element driver drain transparent electrode are formed in the same layer; 3. The two-dimensional photosensor-embedded display according to claim 1 or 2.

13. A two-dimensional photosensor-embedded display, A glass substrate; a photosensing unit arranged two-dimensionally on the glass substrate; a display unit, the photosensing unit has a photodiode that generates a current based on external light, the display unit includes a display element that changes its display when a voltage or a current is applied, and a display element driver that transmits a voltage or a current to the display element based on a display signal; the photodiode has a photosensor bottom electrode, a photosensor semiconductor layer, a photosensor ohmic contact layer 206, and a photosensor transparent electrode that are arranged on the glass substrate side, and a Schottky diode type photodiode is formed between the photosensor bottom electrode and the photosensor transparent electrode based on a Schottky barrier at an interface between the photosensor bottom electrode and the photosensor semiconductor layer or at an interface between the photosensor semiconductor layer and the photosensor transparent electrode; The display element driver has a display element driver thin film transistor. the display element driver thin film transistor includes a display element driver gate electrode, a display element driver interlayer insulating film, a display element driver semiconductor layer, a display element driver source electrode, and a display element driver drain electrode; the photosensor bottom electrode, the display element driver source electrode, and the display element driver drain electrode are formed in the same layer; Display with built-in two-dimensional photosensor.

14. the photosensing unit further includes a photosensor driving unit that reads out a signal from the photodiode, the photosensor driving unit has a photosensor driving unit thin film transistor; the photosensor driver thin film transistor includes a photosensor driver gate electrode, a photosensor driver interlayer insulating film, a photosensor driver semiconductor layer, a photosensor driver source electrode, and a photosensor driver drain electrode; the photosensor bottom electrode, the photosensor driver source electrode, the photosensor driver drain electrode, the display element driver source electrode, and the display element driver drain electrode are formed in the same layer; The two-dimensional photosensor-embedded display according to claim 13.

15. the photosensor driving portion interlayer insulating film and the display element driving portion interlayer insulating film are formed in the same layer; The two-dimensional photosensor-embedded display according to claim 14.

16. the photosensor driving semiconductor layer and the display element driving semiconductor layer are formed in the same layer; 16. The two-dimensional photosensor-embedded display according to claim 14 or 15.

17. the photosensor driving section source electrode, the photosensor driving section drain electrode, the display element driving section source electrode, and the display element driving section drain electrode are formed in the same layer; The two-dimensional photosensor-embedded display according to claim 14.

18. The drain electrode of the photosensor driver has a transparent electrode layer and is formed in the same layer as the photosensor transparent electrode. The two-dimensional photosensor-embedded display according to claim 14.

19. A method for manufacturing a two-dimensional photosensor-embedded display, comprising: The two-dimensional photosensor-embedded display is A glass substrate; a photosensing unit arranged two-dimensionally on the glass substrate; a display unit, the photosensing unit has a photodiode that generates a current based on external light, the display unit includes a display element that changes its display when a voltage or a current is applied, and a display element driver that transmits a voltage or a current to the display element based on a display signal; the photodiode has a photosensor bottom electrode, a photosensor semiconductor layer, a photosensor ohmic contact layer, and a photosensor transparent electrode, and a Schottky diode type photodiode is formed between the photosensor bottom electrode and the photosensor transparent electrode based on a Schottky barrier portion at an interface between the photosensor bottom electrode and the photosensor semiconductor layer or at an interface between the photosensor semiconductor layer and the photosensor transparent electrode, the display element driver has a display element driver thin film transistor, the display element driver thin film transistor includes a display element driver gate electrode, a display element driver interlayer insulating film, a display element driver semiconductor layer, a display element driver source electrode, and a display element driver drain electrode; The photosensor bottom electrode and the display element driver gate electrode are simultaneously formed. A manufacturing method for a display with a built-in two-dimensional photosensor.

20. the photosensing unit further includes a photosensor driving unit that reads out a signal from the photodiode, the photosensor driving unit has a photosensor driving unit thin film transistor; the photosensor driver thin film transistor includes a photosensor driver gate electrode, a photosensor driver interlayer insulating film, a photosensor driver semiconductor layer, a photosensor driver source electrode, and a photosensor driver drain electrode; the photosensor bottom electrode, the photosensor driving portion gate electrode, and the display element driving portion gate electrode are simultaneously formed; The method for manufacturing the two-dimensional photosensor-embedded display according to claim 19.

21. the photosensor driving portion interlayer insulating film and the display element driving portion interlayer insulating film are simultaneously formed; The method for manufacturing the two-dimensional photosensor-embedded display according to claim 20.

22. The photosensor driving semiconductor layer and the display element driving semiconductor layer are simultaneously formed. A method for manufacturing the two-dimensional photosensor-embedded display according to claim 20 or 21.

23. The photosensor driver source electrode, the photosensor driver drain electrode, the display element driver source electrode, and the display element driver drain electrode are simultaneously formed. A method for manufacturing the two-dimensional photosensor-embedded display according to claim 20 or 21.

24. The photosensor driver drain electrode has a photosensor driver drain transparent electrode made of a transparent electrode, and is formed simultaneously with the photosensor transparent electrode. A method for manufacturing the two-dimensional photosensor-embedded display according to claim 20 or 21.

25. The photosensor semiconductor layer, the photosensor driving section semiconductor layer, and the display element driving section semiconductor layer are simultaneously formed. A method for manufacturing the two-dimensional photosensor-embedded display according to claim 20 or 21.

26. the photosensor driver thin film transistor has a photosensor driver ohmic contact layer that is an ohmic contact layer, the display element driver thin film transistor has an ohmic contact layer which is an ohmic contact layer, The photosensor ohmic contact layer, the photosensor driver ohmic contact layer, and the display element driver ohmic contact layer are simultaneously formed. A method for manufacturing the two-dimensional photosensor-embedded display according to claim 20 or 21.

27. the photosensor driving section has a photosensor driving section drain transparent electrode which is the photosensor driving section drain electrode made of a transparent electrode, the display element driving section has a display element driving section drain transparent electrode made of a transparent electrode, and the photosensor transparent electrode, the photosensor driving section drain transparent electrode, and the display element driving section drain transparent electrode are simultaneously formed; The method for manufacturing the two-dimensional photosensor-embedded display according to claim 20.

28. The photosensor semiconductor layer and the display element driver semiconductor layer are simultaneously formed.

21. A method for manufacturing the two-dimensional photosensor-embedded display according to claim 19 or 20.

29. the display element driver thin film transistor has an ohmic contact layer which is an ohmic contact layer, The photosensor ohmic contact layer and the display element driver ohmic contact layer are simultaneously formed.

21. A method for manufacturing the two-dimensional photosensor-embedded display according to claim 19 or 20.

30. the display element driver has a display element driver drain transparent electrode made of a transparent electrode, The photosensor transparent electrode and the display element driver drain transparent electrode are simultaneously formed.

21. A method for manufacturing the two-dimensional photosensor-embedded display according to claim 19 or 20.

31. A method for manufacturing a two-dimensional photosensor-embedded display, comprising: The two-dimensional photosensor-embedded display is A glass substrate; a photosensing unit arranged two-dimensionally on the glass substrate; a display unit, the photosensing unit has a photodiode that generates a current based on external light, the display unit includes a display element that changes its display when a voltage or a current is applied, and a display element driver that transmits a voltage or a current to the display element based on a display signal; the photodiode has a photosensor bottom electrode, a photosensor semiconductor layer, a photosensor ohmic contact layer 206, and a photosensor transparent electrode that are arranged on the glass substrate side, and a Schottky diode type photodiode is formed between the photosensor bottom electrode and the photosensor transparent electrode based on a Schottky barrier at an interface between the photosensor bottom electrode and the photosensor semiconductor layer or at an interface between the photosensor semiconductor layer and the photosensor transparent electrode; The display element driver has a display element driver thin film transistor. the display element driver thin film transistor includes a display element driver gate electrode, a display element driver interlayer insulating film, a display element driver semiconductor layer, a display element driver source electrode, and a display element driver drain electrode; The photosensor bottom electrode, the display element driver source electrode, and the display element driver drain electrode are simultaneously formed. A manufacturing method for a display with a built-in two-dimensional photosensor.

32. the photosensing unit further includes a photosensor driving unit that reads out a signal from the photodiode, the photosensor driving unit has a photosensor driving unit thin film transistor; the photosensor driver thin film transistor includes a photosensor driver gate electrode, a photosensor driver interlayer insulating film, a photosensor driver semiconductor layer, a photosensor driver source electrode, and a photosensor driver drain electrode; The photosensor bottom electrode, the photosensor driver source electrode, the photosensor driver drain electrode, the display element driver source electrode, and the display element driver drain electrode are simultaneously formed. A method for manufacturing the two-dimensional photosensor-embedded display according to claim 31.

33. the photosensor driving portion interlayer insulating film and the display element driving portion interlayer insulating film are simultaneously formed; A method for manufacturing the two-dimensional photosensor-embedded display according to claim 32.

34. The photosensor driving semiconductor layer and the display element driving semiconductor layer are simultaneously formed. A method for manufacturing the two-dimensional photosensor-embedded display according to claim 32 or 33.

35. The photosensor driver source electrode, the photosensor driver drain electrode, the display element driver source electrode, and the display element driver drain electrode are simultaneously formed. A method for manufacturing the two-dimensional photosensor-embedded display according to claim 32 or 33.

36. The drain electrode of the photosensor driver has a transparent electrode layer and is formed simultaneously with the photosensor transparent electrode. A method for manufacturing the two-dimensional photosensor-embedded display according to claim 32 or 33.

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