Electronic components

Abstract

The present invention provides an electronic component that suppresses degradation of performance even when the plating layer is formed on the outer conductor. [Solution] The electronic component comprises a body 3 including sides 3e and 3a, an internal conductor disposed within the body 3 and including an end 7a exposed on side 3e, and an external conductor disposed on side 3e and connected to the end 7a of the internal conductor. The external conductor is in contact with side 3e and physically connected to the aforementioned end of the internal conductor and includes a region R1 containing a conductive material, a region R2 located on the outermost edge of the external conductor and also containing a conductive material, and a region R3 located between region R1 and region R2, which is less permeable to hydrogen than region R1 and region R2, respectively.

Description

[Technical Field]

[0001] This invention relates to electronic components. [Background technology]

[0002] A known electronic component comprises a body, an internal conductor, and an external conductor (see, for example, Patent Document 1). The body includes sides. The internal conductor is located within the body and includes ends exposed on the sides. The external conductor is located on the sides and is connected to the ends of the internal conductor. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2003-243249 [Overview of the project] [Problems that the invention aims to solve]

[0004] Electronic components may have a configuration in which a plating layer is formed on the outer conductor. In such configurations, hydrogen may be generated due to the formation of the plating layer. If the generated hydrogen diffuses into the base material through the outer conductor, the properties of the electronic component may deteriorate. For example, the insulation resistance may decrease.

[0005] One aspect of the present invention aims to provide an electronic component that suppresses degradation of performance even when the plating layer is formed on an external conductor. [Means for solving the problem]

[0006] An electronic component according to one aspect of the present invention comprises a body including a side surface, an internal conductor disposed within the body including an end exposed on the side surface, and an external conductor disposed on the side surface and connected to the end of the internal conductor. The external conductor is in contact with the side surface and physically connected to the end of the internal conductor and includes a first region containing a conductive material, a second region located on the outermost edge of the external conductor and containing a conductive material, and a third region located between the first and second regions and less permeable to hydrogen than the first and second regions, respectively.

[0007] In one of the above embodiments, the outer conductor includes a third region. The third region prevents hydrogen from moving within the outer conductor from the second region to the first region. Therefore, hydrogen is less likely to diffuse into the substrate. This embodiment suppresses a decrease in performance. In one of the above embodiments, the outer conductor includes a second region. The second region includes a conductive material. Therefore, a plating layer is easily formed in the second region. The above embodiment can easily adopt a configuration in which the plating layer is formed on the outer conductor. In one embodiment described above, the outer conductor includes a first region, which includes a conductive material. Therefore, this embodiment ensures an electrical connection between the inner conductor and the outer conductor. [Effects of the Invention]

[0008] One aspect of the present invention provides an electronic component that suppresses degradation of performance even when it has a configuration in which a plating layer is formed on an external conductor. [Brief explanation of the drawing]

[0009] [Figure 1] Figure 1 is a perspective view of a multilayer capacitor according to one embodiment. [Figure 2] Figure 2 shows the cross-sectional configuration of the multilayer capacitor according to this embodiment. [Figure 3] Figure 3 shows the outer conductor. [Figure 4] Figure 4 shows an example of the formation process of the outer conductor. [Figure 5]FIG. 5 is a diagram showing an example of the process of forming an external conductor. [Figure 6] FIG. 6 is a diagram showing an example of the process of forming an external conductor. [Figure 7] FIG. 7 is a diagram showing a cross-sectional configuration of a multilayer capacitor according to a modified example of the present embodiment. [Figure 8] FIG. 8 is a diagram showing an example of the process of forming an external conductor. [Figure 9] FIG. 9 is a diagram showing an example of the process of forming an external conductor. [Figure 10] FIG. 10 is a diagram showing a cross-sectional configuration of a multilayer capacitor according to another modified example of the present embodiment. [Figure 11] FIG. 11 is a diagram showing an example of the process of forming an external conductor. [Figure 12] FIG. 12 is a diagram showing an example of the process of forming an external conductor. [Figure 13] FIG. 13 is a diagram showing a cross-sectional configuration of a multilayer capacitor according to still another modified example of the present embodiment. [Figure 14] FIG. 14 is a diagram showing an external conductor. [Figure 15] FIG. 15 is a diagram showing the result of an insulation resistance test.

BEST MODE FOR CARRYING OUT THE INVENTION

[0010] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description, the same reference numerals are used for the same elements or elements having the same function, and redundant descriptions are omitted.

[0011] Referring to FIGS. 1 to 3, the configuration of the multilayer capacitor C1 according to the present embodiment will be described. FIG. 1 is a perspective view of the multilayer capacitor according to the present embodiment. FIG. 2 is a diagram showing a cross-sectional configuration of the multilayer capacitor according to the present embodiment. FIG. 3 is a diagram showing an external conductor. In FIG. 3, illustration of the plating layer is omitted, and the region R2, the element body 3, and the internal electrode 7 are shown by a two-dot chain line. The electronic component includes, for example, the multilayer capacitor C1.

[0012] As shown in Figure 1, the multilayer capacitor C1 includes a base body 3 and a plurality of external electrodes 5. The multilayer capacitor C1 includes, for example, a pair of external electrodes 5. The pair of external electrodes 5 are arranged on the outer surface of the base body 3. The pair of external electrodes 5 are spaced apart from each other. The base body 3 has, for example, a rectangular parallelepiped shape. The rectangular parallelepiped shape includes a rectangular parallelepiped shape with chamfered corners and edges, or a rectangular parallelepiped shape with rounded corners and edges.

[0013] Body 3 includes four sides 3a and a pair of opposing sides 3e. The four sides 3a are adjacent to sides 3e. The four sides 3a and the pair of sides 3e form a rectangle. The four sides 3a include a pair of opposing sides 3a1 and a pair of opposing sides 3a2. The direction in which the pair of sides 3a1 face each other is direction D2. The direction in which the pair of sides 3a2 face each other is direction D3. The direction in which the pair of sides 3e face each other is direction D1. For example, if side 3e contains a side, then side 3a contains another side.

[0014] The multilayer capacitor C1 is soldered to an electronic device. The electronic device includes, for example, a circuit board or another electronic component. In the multilayer capacitor C1, one of the four sides 3a faces the electronic device. One of the four sides 3a is positioned to form the mounting surface. One of the four sides 3a is the mounting surface.

[0015] Direction D2 is perpendicular to a pair of sides 3a and perpendicular to direction D3. Direction D1 is parallel to one pair of sides 3a and another pair of sides 3a and perpendicular to directions D2 and D3. Direction D3 is perpendicular to another pair of sides 3a, and direction D1 is perpendicular to each side 3e. The length of the element 3 in direction D1 is, for example, greater than the length of the element 3 in direction D2 and greater than the length of the element 3 in direction D3. Direction D1 is the longitudinal direction of the element 3. The length of the element 3 in direction D2 and the length of the element 3 in direction D3 may be equal to each other. The length of the element 3 in direction D2 and the length of the element 3 in direction D3 may be different to each other.

[0016] The length of base body 3 in direction D2 is the height of base body 3. The length of base body 3 in direction D3 is the width of base body 3. The length of base body 3 in direction D1 is the length of base body 3. For example, the height of base body 3 is 0.1 to 3.2 mm, the width of base body 3 is 0.1 to 6.3 mm, and the length of base body 3 is 0.2 to 7.5 mm. For example, the height of base body 3 is 1.25 mm, the width of base body 3 is 1.25 mm, and the length of base body 3 is 2.0 mm.

[0017] A pair of sides 3a extend in direction D3 to connect another pair of sides 3a. A pair of sides 3a also extends in direction D1. Another pair of sides 3a extends in direction D2 to connect another pair of sides 3a. Another pair of sides 3a also extends in direction D1. A pair of sides 3e extend in direction D2 to connect another pair of sides 3a. A pair of sides 3e extend in direction D3 to connect another pair of sides 3a.

[0018] Body 3 includes a ridge located between side 3e and side 3a, and a ridge located between one of a pair of side 3a and one of another pair of side 3a. For example, each ridge is rounded to curve. Body 3 is subjected to so-called R-chamfering. Side 3e and side 3a are indirectly adjacent via the ridge located between side 3e and side 3a. One of a pair of side 3a and one of another pair of side 3a are indirectly adjacent via the ridge located between one of a pair of side 3a and one of another pair of side 3a.

[0019] The element 3 is constructed by stacking multiple dielectric layers in direction D2. The element 3 includes multiple stacked dielectric layers. In the element 3, the stacking direction of the multiple dielectric layers coincides with direction D2. Each dielectric layer is composed of, for example, a sintered body of a ceramic green sheet containing a dielectric material. The dielectric material includes dielectric ceramics. Dielectric ceramics include, for example, BaTiO3 systems, Ba(Ti,Zr)O3 systems, or (Ba,Ca)TiO3 systems. In the actual element 3, each dielectric layer is integrated to such an extent that the boundaries between each dielectric layer are not visible. The element 3 includes a ceramic element.

[0020] As shown in Figures 2 and 3, the multilayer capacitor C1 includes a plurality of internal electrodes 7. Each internal electrode 7 is located within the element 3. Each internal electrode 7 includes an internal conductor. Each internal electrode 7 is made of a conductive material commonly used as an internal conductor in multilayer electronic components. The conductive material includes, for example, a base metal. The conductive material includes, for example, Ni or Cu. The internal electrode 7 is constructed as a sintered body of a conductive paste containing the conductive material. For example, each internal electrode 7 is made of Ni.

[0021] Multiple internal electrodes 7 are arranged in different positions (layers) in direction D2. Multiple internal electrodes 7 are arranged in the base body 3 so as to be spaced apart and facing each other in direction D2. Adjacent internal electrodes 7 in direction D2 have different polarities. The end 7a of an internal electrode 7 is exposed to the corresponding side 3e of a pair of side surfaces 3e. An internal electrode 7 includes an end 7a exposed to the corresponding side surface 3e. Multiple internal electrodes 7 include an internal electrode 7 exposed to one side surface 3e of a pair of side surfaces 3e and an internal electrode 7 exposed to the other side surface 3e of a pair of side surfaces 3e. The internal electrodes 7 exposed to one side surface 3e and the internal electrodes 7 exposed to the other side surface 3e are arranged alternately in direction D2. Multiple internal electrodes 7 are arranged in the base body 3 so as to be aligned in direction D2. The internal electrodes 7 are located in a plane substantially parallel to the pair of side surfaces 3a. The direction in which the internal electrodes 7 face each other (direction D2) is perpendicular to the direction parallel to the pair of side surfaces 3a (directions D3 and D1).

[0022] When the stacking direction of multiple dielectric layers is direction D3, the multiple internal electrodes 7 are arranged at different positions (layers) in direction D3. When the stacking direction of multiple dielectric layers is direction D3, the internal electrodes 7 exposed on one side surface 3e and the internal electrodes 7 exposed on the other side surface 3e are arranged alternately in direction D3. The internal electrodes 7 are located in a plane substantially parallel to another pair of side surfaces 3a. The internal electrodes 7 face each other in direction D3. Figures 2 and 3 show an example in which multiple internal electrodes 7 face each other with a gap in direction D2.

[0023] As shown in Figure 1, a pair of external electrodes 5 are positioned at both ends of the base body 3 in direction D1. Each external electrode 5 is positioned on the corresponding side 3e of the base body 3. For example, each external electrode 5 is positioned on four sides 3a and one side 3e. The external electrodes 5 are formed on the five surfaces of the four sides 3a and one side 3e, as well as on the edges. Each pair of external electrodes 5 covers all of the ends 7a of the corresponding internal electrode 7 among the multiple internal electrodes 7. Each pair of external electrodes 5 is directly connected to the corresponding internal electrode 7. Each external electrode 5 is electrically connected to the corresponding internal electrode 7.

[0024] As shown in Figures 2 and 3, each of the pair of external electrodes 5 includes an external conductor 6. The external conductor 6 is located on the side surface 3e and includes regions R1, R2, and R3. The external conductor 6 consists of a conductor layer 6a including region R1, a conductor layer 6b including region R2, and an intermediate layer 6c including region R3. The external conductor 6 is connected to the end 7a of the internal electrode 7. For example, if region R1 includes a first region, region R2 includes a second region, and region R3 includes a third region.

[0025] Region R1 is in contact with the base body 3. Region R1 is located on side 3e. Region R1 covers side 3e. Region R1 directly covers side 3e and is in direct contact with side 3e. Region R1 is located, for example, on one side 3e and on four sides 3a. Region R1 directly covers, for example, a portion of side 3a. Region R1 is in direct contact with, for example, the aforementioned portion of side 3a. The aforementioned portion of side 3a covered by region R3 is located closer to side 3e. Side 3a is exposed from region R1 in areas other than the aforementioned portion covered by region R1. Region R1 is located, for example, on the ridge between side 3e and side 3a. Region R1 is physically and electrically connected to the end 7a of the corresponding internal electrode 7. Region R1 is directly connected to the end 7a of the corresponding internal electrode 7. Side 3a includes a region not covered by region R1. Side surface 3a includes a region exposed from region R1. Region R1 does not have to be formed on side surface 3a. Region R1 may not be formed on side surface 3a, but may be formed on the ridge between side surface 3e and side surface 3a. Region R1 does not have to be formed on side surface 3a or on the ridge between side surface 3e and side surface 3a. For example, region R1 includes only a sintered metal layer. The sintered metal layer of region R1 includes a first conductive material. The first conductive material includes, for example, a noble metal or a base metal. The noble metal includes Ag. The noble metal may include Au, Pt, or Pd. The base metal includes, for example, Cu or Ni.

[0026] Region R2 is located on the outermost edge of the outer conductor 6. Region R2 covers region R1 located on side surface 3e. Region R2 is located, for example, on region R1, which is located on one side surface 3e and four side surfaces 3a. Region R2 directly covers, for example, only a portion of side surface 3a. Region R2 is in direct contact with, for example, only the aforementioned portion of side surface 3a. The aforementioned portion of side surface 3a covered by region R2 is located closer to side surface 3e. Side surface 3a is exposed from region R2 in areas other than the aforementioned portion covered by region R2. Region R2 includes a region that is in direct contact with region R1.

[0027] Side surface 3a includes a region not covered by region R2. Side surface 3a includes a region exposed from region R2. Region R2 does not have to be formed on side surface 3a. Region R2 may not be formed on side surface 3a, but may be formed on region R1 located on the ridge between side surface 3e and side surface 3a. Region R2 does not have to be formed on region R1 located on side surface 3a and on region R1 located on the ridge between side surface 3e and side surface 3a. For example, region R2 includes only a sintered metal layer. The sintered metal layer of region R2 includes a second conductive material. The second conductive material includes, for example, a noble metal or a base metal. The noble metal includes Ag. The noble metal may include Au, Pt, or Pd. The base metal includes, for example, Cu or Ni. The second conductive material includes, for example, the same metal as the metal included in the first conductive material.

[0028] Region R3 is located between region R1 and region R2. Region R3 is located on region R1. Region R3 covers region R1 located on side 3e. Region R3 is located on region R1, for example, on one side 3e and four sides 3a. Region R3 directly covers only a portion of region R1, for example. Region R3 is in direct contact with the aforementioned portion of side 3a, for example. The aforementioned portion of side 3a covered by region R3 is located closer to side 3e. Side 3a is exposed from region R3 in areas other than the aforementioned portion covered by region R3. Region R3 is formed on region R1, for example, located on the ridge between side 3e and side 3a. Region R3 covers region R1, for example, with an area of ​​more than half of the surface area of ​​region R1. Region R3 is in direct contact with region R2, for example. The entirety of region R3 is covered by region R2. Region R3 does not cover all of Region R1. Region R1 includes the region covered by Region R3 and the region not covered by Region R3. Region R2 includes the region located on Region R1 and the region located on Region R3. The region of Region R2 located on Region R1 is adjacent to Region R1. The region of Region R2 located on Region R1 is directly connected to Region R1. The region of Region R2 located on Region R3 is adjacent to Region R3. The region of Region R2 located on Region R3 is directly connected to Region R3.

[0029] Region R3 covers region R1, and this coverage rate is determined by the following procedure: A photograph is taken that includes the portion located on the side surface 3e of regions R1 and R3. The acquired photograph is, for example, a photograph of the cross-section of regions R1 and R3 taken from a direction perpendicular to the side surface 3e of the multilayer capacitor C1. Next, a photograph is taken that includes the portion located on the side surface 3a of regions R1 and R3. The acquired photograph is, for example, a photograph of the cross-section of regions R1 and R3 taken from a direction perpendicular to the side surface 3a of the multilayer capacitor C1. From the acquired photographs, the boundaries of regions R1 and R3 are determined, and the length L1 of the portion where region R1 touches region R2 and the length L3 of the portion where region R3 touches region R2 are calculated. Each of lengths L1 and L3 is, for example, the average value of the lengths on multiple acquired photographs. The coverage rate is the value calculated by L3 / (L1+L3).

[0030] Region R3 includes, for example, a portion R3a that exposes region R1. The portion R3a has, for example, the shape of an opening. In portion R3a, region R3 does not cover region R1. Regions R1 and R2 may be directly connected to each other, for example, via portion R3a. Region R3 may include multiple portions R3a. Region R3 may not include portions R3a.

[0031] Region R3 has a thickness of, for example, 1 μm or more. The thickness of region R3 can be determined, for example, as follows: Cross-sectional images of the multilayer capacitor C1 are obtained at the location including region R3. The cross-sectional image of region R3 located on side surface 3e is, for example, a photograph of the cross-section of region R3 taken when the multilayer capacitor C1 is cut by a plane perpendicular to side surface 3e. The cross-sectional image of region R3 located on side surface 3a1 is, for example, a photograph of the cross-section of region R3 taken when the multilayer capacitor C1 is cut by a plane perpendicular to side surface 3a1. The cross-sectional image of region R3 located on side surface 3a2 is, for example, a photograph of the cross-section of region R3 taken when the multilayer capacitor C1 is cut by a plane perpendicular to side surface 3a2. The cross-sectional images are, for example, SEM (scanning electron microscope) images. The SEM images include, for example, compositional images. To calculate the thickness of region R3, image processing of the acquired cross-sectional images is performed using software. Based on the results of this image processing, the boundary of region R3 is determined and the thickness of region R3 is calculated. The thickness of region R3 is, for example, the average value of the thickness on the acquired cross-sectional images.

[0032] Region R3 contains materials that are less permeable to hydrogen than regions R1 and R2. Region R3 has a lower hydrogen content than regions R1 and R2. Hydrogen content is an indicator of how easily hydrogen is retained. Regions with low hydrogen content are less likely to retain hydrogen, and less hydrogen is allowed to pass through them. Therefore, region R3 is less likely to retain hydrogen and less likely to allow hydrogen to pass through than regions R1 and R2. Region R3 has a lower hydrogen permeability coefficient than regions R1 and R2. Hydrogen permeability coefficient is an indicator of barrier properties against hydrogen. Regions with low hydrogen permeability coefficients have high barrier properties against hydrogen, and less hydrogen is allowed to pass through them. Therefore, hydrogen is less likely to pass through region R3 than through regions R1 and R2. Region R3 includes materials having a hydrogen permeability coefficient smaller than that of the first and second conductive materials contained in regions R1 and R2. The materials included in region R3 include glass having a hydrogen permeability coefficient smaller than that of the first and second conductive materials. The glass includes, for example, a network-forming oxide or a network-modified oxide. The network-forming oxide includes, for example, silicon dioxide, aluminum oxide, or diboron trioxide. The network-modified oxide includes, for example, alkali metal oxide, alkaline earth metal oxide, or zinc oxide. The network-forming oxide includes, for example, 16,1Na2O-16,1Al2O3-67,8SiO2. The coefficients for each component correspond to mol%. The hydrogen permeability coefficient of 16,1Na2O-16,1Al2O3-67,8SiO2 at a temperature of 398K is 1 × 10⁻⁶ -20 mol-H2 / (m·s·Pa 1 / 2 ) This hydrogen permeability coefficient is 1 × 10⁻⁶ under a pressure of 1 atmosphere. -15 The ratio is mol-H2 / (m·s). The hydrogen permeability coefficient of Cu at a temperature of 398K is, for example, 4.03 × 10⁻⁶. -17 mol-H2 / (m·s·Pa 1 / 2 This hydrogen permeability coefficient is 1.27 × 10⁻⁶ under a pressure of 1 atmosphere. -14 The ratio is mol-H2 / (m·s). The above glass has a hydrogen permeability coefficient that is smaller than that of Cu under a pressure of 1 atmosphere. Region R3 may contain a resin. The resin may include, for example, an epoxy resin, a phenolic resin, or an unsaturated polyester resin. Hydrogen exists in gaseous form within the resin and is dissolved in the metal contained in region R2 in atomic form. Therefore, for hydrogen to diffuse from region R2 to region R3, the dissolved hydrogen at the interface between region R2 and region R3 must be activated by hydrogen gas. The activation energy required to activate the hydrogen gas suppresses the diffusion of hydrogen into region R3, and as a result, region R3 suppresses the permeation of hydrogen within the outer conductor.

[0033] The multilayer capacitor C1 includes a plating layer formed on the outer conductor 6. The plating layer includes a metal plating layer. The metal plating layer has, for example, a multilayer structure. In this embodiment, the plating layer consists of a first layer 9a and a second layer 9b. The first layer 9a includes, for example, a Ni plating layer. The first layer 9a may also include a Sn plating layer, a Cu plating layer, or an Au plating layer. The second layer 9b includes, for example, a solder plating layer. The solder plating layer includes, for example, a Sn plating layer. The second layer 9b may also include a Sn-Ag alloy plating layer, a Sn-Bi alloy plating layer, or a Sn-Cu alloy plating layer. The first layer 9a covers region R2. The first layer 9a is directly connected to region R2. The second layer 9b covers the first layer 9a.

[0034] The method for forming the outer conductor 6 according to this embodiment will be described below with reference to Figures 4 to 6. Figures 4 to 6 show an example of the process of forming the outer conductor. The method for forming the outer conductor 6 includes applying a first paste P1 to the base body 3, baking the first paste P1 to form regions R1 and R3, applying a second paste P2 on region R3, and baking the second paste P2 to form region R2. As shown in Figure 4, in the method for forming the outer conductor 6, a first paste P1 is applied to the sides 3e, 3a of the substrate 3. The first paste P1 includes a conductive paste, which comprises metal powder, a glass component, an organic binder, and an organic solvent. The metal component includes metal powder. The metal powder includes noble metal powder or base metal powder. The noble metal includes Ag. The noble metal may also include Au, Pt, or Pd. The base metal may include Cu or Ni. The first paste P1, for example, includes Cu powder, glass frit, an organic binder, and an organic solvent.

[0035] Next, the first paste P1 applied to sides 3e and 3a is baked on. The baking temperature is, for example, 700°C to 800°C. As shown in Figure 5, regions R1 and R3 are formed by the baking of the first paste P1. Region R1 contains a sintered metal layer. The sintered metal layer contains a layer formed by sintering the metal powder contained in the first paste P1. The metal powder contains Ag or Cu. During the baking of the first paste P1, the glass component contained in the first paste P1 migrates to the surface of the first paste P1. The glass component that migrated to the surface of the first paste P1 forms region R3. Region R1 is formed on the substrate 3, and region R3 is formed on region R1. Region R3 contains more glass component than region R1. Region R3 is formed within the applied first paste P1. Region R1 covers the end 7a of the internal electrode 7. Region R3 covers region R1 located on the side surface 3e.

[0036] As shown in Figure 6, a second paste P2 is then applied to cover regions R1 and R3. The second paste P2 comprises metal powder, glass components, an organic binder, and an organic solvent. The second paste P2 comprises, for example, the same metal powder, glass components, organic binder, and organic solvent as the first paste. The second paste P2 comprises, for example, Cu powder, glass frit, an organic binder, and an organic solvent. Next, the applied second paste P2 is baked on. The temperature at which the second paste P2 is baked on is, for example, 700°C to 800°C. The baking of the second paste P2 forms region R2. Region R2 covers the entire region R3. The formation of region R2 forms the outer conductor 6. The second paste P2 has a lower glass content than the first paste P1. Therefore, the conductor layer 6b containing region R2 has a lower glass content than the conductor layer 6a containing region R1.

[0037] Next, a plating layer 9 is formed on region R2. A Ni plating layer is formed as the first layer 9a on region R2, and a Sn plating layer is formed as the second layer 9b on the Ni plating layer. The plating layers are formed by a plating method. The plating method includes, for example, electroplating.

[0038] The ingredients contained in the first paste P1 and their respective content (by weight) are exemplified below. Metal powder (Cu powder): 60% by weight Glass component (glass frit): 25% by weight Organic matter (organic binder and organic solvent): 15% by weight The ingredients contained in the second paste P2, and their respective content (by weight %), are exemplified below. Metal powder (Cu powder): 75% by weight Glass component (glass frit): 5% by weight Organic matter (organic binder and organic solvent): 20% by weight

[0039] Referring to Figure 7, a modified example of the multilayer capacitor C1 of this embodiment will be described. Figure 7 is a diagram showing the cross-sectional configuration of a modified example of the multilayer capacitor of this embodiment. The modified example of the multilayer capacitor C1 includes a base body 3, an outer conductor 6, and an inner electrode 7 (inner conductor). The outer conductor 6 includes regions R1, R3, and R2. In the modified example of the multilayer capacitor C1, the method of forming the outer conductor 6 differs from that of the multilayer capacitor C1 according to the embodiment.

[0040] A method for forming an external conductor 6 according to one modified example will be described with reference to Figures 8 and 9. Figures 8 and 9 are diagrams showing an example of the process of forming an external conductor. The method for forming an external conductor 6 according to one modified example includes applying a second paste P2 to a base body 3, applying a third paste P3 on the second paste P2, applying another second paste P2 so as to cover the second paste P2 and the third paste P3, and baking the second paste P2, the third paste P3 and the other second paste P2 to form regions R1, R3, and R2. As shown in Figure 8, in a method for forming the outer conductor 6 according to one modified example, a second paste P2 is applied to the sides 3e and 3a. Subsequently, a third paste P3 is applied on the second paste P2. The third paste P3 contains a glass component, an organic binder, and an organic solvent. The third paste P3 is applied, for example, by screen printing. The third paste P3 contains a greater amount of glass component than the second paste P2. The third paste P3 has a greater glass content than the second paste P2.

[0041] As shown in Figure 9, another second paste P2 is then applied so as to cover the second paste P2 and third paste P3 applied to the sides 3e and 3a. The other second paste P2 contains, for example, the same metal powder, glass components, organic binder, and organic solvent as the second paste P2. Next, the second paste P2, the third paste P3, and another second paste P2 are baked on to form regions R1, R3, and R2. The second paste P2 forms region R1, the third paste P3 forms region R3, and another second paste P2 forms region R2. The temperature at which the second and third pastes P2 and P3 are baked on is, for example, 700°C to 850°C. The formation of regions R1, R3, and R2 forms the outer conductor 6. Region R1 is formed within the applied second paste P2. Region R3 is formed within the applied third paste P3. Region R2 is formed within another applied second paste P2. Region R1 covers the entire side surface 3e and also covers the end 7a of the internal electrode 7. Region R3 covers more than half of the surface area of ​​region R1 located on side surface 3e. Region R2 covers the entire region R3. The ingredients contained in the third paste P3, and their respective content (by weight %), are exemplified as follows: Glass component (glass frit): 80% by weight Organic matter (organic binder and organic solvent): 20% by weight

[0042] In the modified method for forming the outer conductor 6, a plating layer is subsequently formed on the region R2, similar to the method described above for forming the outer conductor 6. The plating layer consists of a Ni plating layer as the first layer 9a and a Sn plating layer as the second layer 9b.

[0043] With reference to Figure 10, a multilayer capacitor C1 according to another modification of this embodiment will be described. Figure 10 is a diagram showing the cross-sectional configuration of a multilayer capacitor according to another modification of this embodiment. The multilayer capacitor C1 according to the other modification includes a base body 3, an outer conductor 6, and an inner electrode 7 (inner conductor). The outer conductor 6 includes regions R1, R3, and R2. In the multilayer capacitor C1 according to the other modification, the method of forming the outer conductor 6 is different from that of the multilayer capacitor C1 according to the embodiment.

[0044] A method for forming an outer conductor 6 according to another modified example will be described with reference to Figures 11 and 12. Figures 11 and 12 are diagrams showing an example of the process of forming an outer conductor. The method for forming an outer conductor 6 according to another modified example includes applying a second paste P2 to a base body 3, baking the applied second paste P2, applying resin on the baked second paste P2, curing the applied resin, and forming a metal layer on the cured resin to form regions R1, R3, and R2. As shown in Figure 11, in another modified method for forming the outer conductor 6, a second paste P2 is applied to the sides 3e and 3a. Subsequently, the second paste P2 applied to the sides 3e and 3a is baked. The baking temperature is, for example, 700°C to 850°C. By baking the second paste P2, a region R1 is formed. Region R1 is formed within the applied second paste P2. The formed region R1 covers the entire side 3e and also covers the end 7a of the internal electrode 7.

[0045] Next, a resin is applied to the region R1 formed from the second paste P2. The resin is applied, for example, by screen printing. The resin includes, for example, an epoxy resin. As shown in Figure 12, the applied resin then hardens. The resin hardens, for example, by heat treatment at a temperature of 200°C for 30 minutes. The hardened resin forms region R3. Region R3 is formed from the applied resin. Region R3 covers more than half the surface area of ​​region R1 located on side surface 3e.

[0046] In another modification, a metal layer is subsequently formed to cover regions R1 and R3. The metal layer is formed, for example, by sputtering. The metal layer contains, for example, a Cu film. The metal layer forms region R2. The metal layer covers the entire cured resin. The formation of regions R1, R3, and R2 forms the outer conductor 6. In the method for forming the outer conductor 6 according to another modification, a plating layer is subsequently formed on region R2, similar to the method for forming the outer conductor 6 according to the embodiment. The plating layer consists of a Ni plating layer as the first layer 9a and a Sn plating layer as the second layer 9b.

[0047] A further modified example of this embodiment, a multilayer capacitor C1, will be described with reference to Figures 13 and 14. Figure 13 is a diagram showing the cross-sectional configuration of a multilayer capacitor according to yet another modified example of this embodiment. Figure 14 is a diagram showing the outer conductor. The further modified example of the multilayer capacitor C1 includes a base body 3, an outer conductor 6, and an internal electrode 7 (internal conductor). The outer conductor 6 includes regions R1, R3, and R2. In Figure 14, the plating layer is omitted, and region R2, the base body 3, and the internal electrode 7 are shown by dashed lines.

[0048] In yet another modified example, the shape of the outer conductor 6 differs from that of the multilayer capacitor C1 according to this embodiment compared to one modified example and another modified example of this embodiment. In yet another modified example, the portion R3a that exposes region R1 is not formed in region R3. Without the formation of portion R3a, region R3 covers region R1. That is, the entirety of region R3 covers region R1. The area of ​​region R1 that is exposed from region R3 is, for example, only the area of ​​region R1 along the outer edge of region R3. In yet another modified example, region R3 covers region R1 with an area of ​​more than half of the surface area of ​​region R1. Region R2 is located on the outermost edge of the outer conductor 6 and is positioned on region R3.

[0049] Next, the inventors conducted insulation resistance tests and simulations to clarify the hydrogen diffusion suppression characteristics and electrical conductivity characteristics of the multilayer capacitor C1 according to this embodiment. To clarify the hydrogen diffusion suppression characteristics, the inventors conducted insulation resistance tests and simulations to determine the amount of hydrogen diffusion using the finite element method. The results of the insulation resistance tests, i.e., the measured values ​​of the insulation resistance, were correlated with the simulation results for determining the amount of hydrogen diffusion. From the results of this correlation, the hydrogen diffusion suppression characteristics were evaluated. To clarify the electrical conductivity characteristics, the inventors conducted simulations to determine the electrical conductivity of the outer conductor using the finite element method.

[0050] In insulation resistance testing, a measurement system is used that includes, for example, a measuring substrate, a constant temperature bath, a power supply, a resistor, and a voltmeter. In this measurement system, the sample is placed on the measuring substrate. The sample placed on the measuring substrate is heated in a constant temperature bath maintained at 125°C. A predetermined voltage is continuously applied from the power supply to the sample while it is being heated in the constant temperature bath. The resistor and voltmeter are connected in parallel, and the parallel-connected resistor and voltmeter are connected in series with the sample and the power supply. When the predetermined voltage is applied to the sample, the voltage value across the resistor is determined by the voltmeter. From the voltage value across the resistor, the current value flowing through the resistor is determined. From the current value flowing through the resistor, the leakage current value generated in the sample, i.e., the leakage current value, is determined. Based on the leakage current value and the predetermined voltage value, the insulation resistance value of the sample is experimentally determined. The insulation resistance value corresponds to the tolerance of the multilayer capacitor to leakage current. The leakage current value is measured at predetermined time intervals. The predetermined time interval is set to 1 hour. The predetermined voltage is set to 6.3V. The heating of the sample in a constant temperature bath is set to a maximum of 100 hours. The sample includes a region R3 containing glass in its material. The multilayer capacitor C1 used in the test has, for example, a 2012 size according to JIS designation. The 2012 size according to JIS designation corresponds to the 0805 size according to EIA designation. The capacitance of the sample including the multilayer capacitor C1 used in the test is 4.7 μF. In the insulation resistance test, multiple samples are prepared. In each sample, the thickness of region R3 is set to 10 μm, and the coverage of region R3 is set to 90%. The insulation resistance test is performed on any number of samples selected from the multiple samples. This arbitrary number is set to, for example, 50.

[0051] In the finite element method for clarifying hydrogen diffusion suppression characteristics, an analysis domain is set up with a geometry that reproduces the measurement system of the insulation resistance test described above. The geometry includes, for example, the configuration, capacitance, and electrical connection relationships of each element corresponding to the sample, measurement substrate, constant temperature chamber, power supply, and voltmeter. The analysis domain is set up so that each of the above elements is the target of analysis. In this embodiment, simulations are performed to determine the amount of hydrogen diffusion at a temperature of 125°C when the thickness and coverage of region R3 are varied. Three thicknesses are set for region R3: 1 μm, 3 μm, and 10 μm, and eight coverage rates are set for region R3: 20%, 40%, 50%, 60%, 70%, 80%, 90%, and 95%. In the simulation, 24 different simulations are performed by combining these thicknesses and coverage rates. From the simulations to determine the amount of hydrogen diffusion, the hydrogen diffusion suppression characteristics are revealed. The hydrogen diffusion suppression characteristics are determined from the heating time required until the hydrogen concentration in the Ni contained in the internal conductor exceeds a threshold. Hydrogen exists in the form of dissolved hydrogen atoms within the metal, which is present in the metals of the external electrode and internal conductor. Since it is difficult to directly determine the concentration of dissolved hydrogen atoms in the metal, the hydrogen concentration in the metal is defined based on the pressure of the hydrogen gas in equilibrium with the hydrogen atoms in the metal, i.e., the equilibrium hydrogen partial pressure. When hydrogen gas at a temperature of 25°C and a pressure of 1 atmosphere is in equilibrium with the hydrogen atoms in Ni, the hydrogen concentration in Ni is considered to be 1. The simulation calculates the following process: This process includes heating the sample placed on the measurement substrate in a constant temperature bath, and diffusing the hydrogen atoms in the Ni contained in the first layer 9a into the Ni of the inner conductor so that the hydrogen atoms in the Ni of the first layer 9a move through regions R1, R3, and R2. In the simulation, based on the results of the insulation resistance test described above, 0.013 is used as the threshold value for the hydrogen concentration in the Ni contained in the inner conductor.

[0052] In the finite element method used to determine the electrical conductivity, the same settings as in the simulation for determining the hydrogen diffusion amount are used, and a simulation is performed to determine the electrical conductivity of the outer conductor. Simulations are performed for the electrical conductivity of the outer conductor including region R3 and the electrical conductivity of the outer conductor not including region R3. From the simulation results, the magnitude of the electrical conductivity of the outer conductor is calculated. The ratio of the magnitude of the electrical conductivity of the outer conductor including region R3 to the magnitude of the electrical conductivity of the outer conductor not including region R3 is considered to be the electrical conductivity characteristic of the sample. The electrical conductivity characteristic is determined from the change in the magnitude of the electrical resistance value obtained from the magnitude of the electrical conductivity.

[0053] Figure 15 shows the hydrogen diffusion suppression characteristics and electrical conductivity characteristics of the multilayer capacitor C1 according to this embodiment. Samples 1 to 24 are set up in the simulation so that the thickness and coverage of region R3 are different. In sample 1, the thickness of region R3 is 1 μm, and the coverage of region R3 is 20%. In sample 2, the thickness of region R3 is 1 μm, and the coverage of region R3 is 40%. In sample 3, the thickness of region R3 is 1 μm, and the coverage of region R3 is 50%. In sample 4, the thickness of region R3 is 1 μm, and the coverage of region R3 is 60%. In sample 5, the thickness of region R3 is 1 μm, and the coverage of region R3 is 70%. In sample 6, the thickness of region R3 is 1 μm, and the coverage of region R3 is 80%. In sample 7, the thickness of region R3 is 1 μm, and the coverage of region R3 is 90%. In sample 8, the thickness of region R3 is 1 μm, and the coverage of region R3 is 95%. In sample 9, the thickness of region R3 is 3 μm, and the coverage of region R3 is 20%. In sample 10, the thickness of region R3 is 3 μm, and the coverage of region R3 is 40%. In sample 11, the thickness of region R3 is 3 μm, and the coverage of region R3 is 50%. In sample 12, the thickness of region R3 is 3 μm, and the coverage of region R3 is 60%. In sample 13, the thickness of region R3 is 3 μm, and the coverage of region R3 is 70%. In sample 14, the thickness of region R3 is 3 μm, and the coverage of region R3 is 80%. In sample 15, the thickness of region R3 is 3 μm, and the coverage of region R3 is 90%. In sample 16, the thickness of region R3 is 3 μm, and the coverage of region R3 is 95%. In sample 17, the thickness of region R3 is 10 μm, and the coverage of region R3 is 20%. In sample 18, the thickness of region R3 is 10 μm, and the coverage of region R3 is 40%. In sample 19, the thickness of region R3 is 10 μm, and the coverage of region R3 is 50%. In sample 20, the thickness of region R3 is 10 μm, and the coverage of region R3 is 60%. In sample 21, the thickness of region R3 is 10 μm, and the coverage of region R3 is 70%. In sample 22, the thickness of region R3 is 10 μm, and the coverage of region R3 is 80%. In sample 23, the thickness of region R3 is 10 μm, and the coverage of region R3 is 90%. In sample 24, the thickness of region R3 is 10 μm, and the coverage of region R3 is 95%.

[0054] (Hydrogen diffusion suppression characteristics) The following criteria are used to evaluate hydrogen diffusion suppression characteristics. Rating S: Even after more than 100 hours of heating, the insulation resistance value does not change compared to before heating, and the hydrogen concentration does not exceed the threshold. Evaluation A: After heating for 10 hours or more, but less than 100 hours, the insulation resistance value changes by 50% or more compared to before heating, while the hydrogen concentration does not exceed the threshold. Evaluation B: After less than 10 hours of heating, the insulation resistance changes by more than 50% compared to before heating, and the hydrogen concentration exceeds the threshold. From the standpoint of hydrogen diffusion suppression characteristics, configurations given an evaluation of S or A tend to particularly suppress the deterioration of the characteristics of the multilayer capacitor C1. Configurations given an evaluation of B also tend to suppress the deterioration of the characteristics of the multilayer capacitor C1.

[0055] The evaluation criteria for samples 1-8 are as follows: For coverage rates of 20-60%: Rating B For coverage of 70-90%: Rating A If the coverage rate is 95%: Rating S The evaluation criteria for samples 9-16 are as follows: For coverage rates of 20-60%: Rating B For coverage of 70-80%: Rating A For coverage of 90-95%: Rating S The evaluation criteria for samples 17-24 are as follows: For coverage of 20-40%: Rating B For coverage of 50-80%: Rating A For coverage of 90-95%: Rating S Evaluation results of hydrogen diffusion suppression characteristics revealed that for multilayer capacitors C1 with a region R3 thickness of 1 μm or 3 μm, a coverage rate of 70-80% tends to suppress the degradation of hydrogen diffusion suppression characteristics. For multilayer capacitors C1 with a region R3 thickness of 10 μm, a coverage rate of 50% or more of region R3 tends to suppress the degradation of hydrogen diffusion suppression characteristics.

[0056] (Electrical conductivity characteristics) The following criteria are used to evaluate electrical conductivity characteristics. Rating S: The electrical resistance is less than three times that of the outer conductor, which does not include region R3. Evaluation A: The electrical resistance is 3 times or more but less than 10 times that of the outer conductor, which does not include region R3. Evaluation B: The electrical resistance is 10 times or more compared to the outer conductor that does not include region R3. From the standpoint of electrical conductivity characteristics, configurations given an evaluation of S or A tend to particularly suppress the degradation of the characteristics of the multilayer capacitor C1. Configurations given an evaluation of B also tend to suppress the degradation of the characteristics of the multilayer capacitor C1.

[0057] The evaluation criteria for samples 1-8 are as follows: For coverage rates of 20-80%: Rating S For coverage of 90-95%: Rating A The evaluation criteria for samples 9-16 are as follows: For coverage rates of 20-80%: Rating S For coverage of 90-95%: Rating A The evaluation criteria for samples 17-24 are as follows: For coverage rates of 20-70%: Rating S For coverage of 80-90%: Rating A If the coverage rate is 95%: Rating B The evaluation results of the electrical conductivity characteristics revealed that for multilayer capacitors C1 with region R3 thicknesses of 1 μm, 3 μm, or 10 μm, the degradation of electrical conductivity characteristics tends to be suppressed when the coverage ratio is between 20% and 90%.

[0058] In the evaluation of hydrogen diffusion suppression characteristics and electrical conductivity characteristics, if region R3 includes glass, equivalent evaluation results can be obtained regardless of the type of glass. Even if region R3 includes resin, as long as the resin has hydrogen diffusion suppression characteristics equivalent to those of glass, the same results as in the evaluation of hydrogen diffusion suppression characteristics and electrical conductivity characteristics when region R3 includes glass can be obtained. The resin included in region R3 includes, for example, epoxy resin.

[0059] The following was observed from the evaluation results of hydrogen diffusion suppression characteristics and electrical conductivity characteristics. When the thickness of region R3 is 1 μm, 3 μm, and 10 μm, there is a tendency to particularly suppress the degradation of the two characteristics mentioned above. In other words, when the thickness of region R3 is 1 μm or more, there is a tendency to suppress the degradation of the two characteristics mentioned above. Even when the thickness of region R3 is less than 1 μm, there is a tendency to suppress the degradation of the two characteristics mentioned above. When the coverage rate of region R3 with respect to region R1 is 50% to 90%, there is a tendency to particularly suppress the deterioration of the above two characteristics. That is, when the coverage rate of region R3 is 50% or more, there is a tendency to suppress the deterioration of the above two characteristics. When the coverage rate of region R3 with respect to region R1 is 70 to 80%, regardless of whether the thickness of region R3 is 1 μm, 3 μm, or 10 μm, there is a tendency to suppress the deterioration of the above two characteristics. When the coverage rate of region R3 with respect to region R1 is 70 to 80% and the thickness of region R3 is 1 to 3 μm, there is a tendency to particularly suppress the deterioration of the above two characteristics. When the multilayer capacitor C1 includes region R3, regardless of the magnitude of the coverage rate of region R3 with respect to region R1, there is a tendency to suppress the deterioration of the above two characteristics. The thickness T (μm) of region R3 and the coverage rate C (%) of region R3 with respect to the surface of region R1 are -2.388T + 69.478 ≤ C ≤ 940 / T It is recognized that the relationship is satisfied. The coverage rate C (%) does not exceed 100%. According to the above relationship, for example, when the thickness T is 1 μm, the coverage rate C (%) is calculated to be 67% or more, and when the thickness T is 3 μm, the coverage rate C (%) is calculated to be 62% or more. For example, when the thickness T is 10 μm, the coverage rate C (%) is calculated to be 46% or more. Therefore, the above relationship is consistent with the test results that recognize that when the coverage rate of region R3 is 70 to 80%, there is a tendency to suppress the deterioration of the above two characteristics at the thicknesses of 1 μm, 3 μm, and 10 μm of region R3. In region R3, the hydrogen permeation coefficient at a temperature of 398 K can be 2.02×10 -17 mol-H2 / (m·s·Pa 1 / 2 ) or less. Even when a partial region R3a is formed in region R3, the hydrogen permeation coefficient at a temperature of 398 K in the combined region of region R3 and partial region R3a is 2.02×10 -17 mol-H2 / (m·s·Pa 1 / 2It is possible to set it to be less than or equal to the following. For example, the region combining region R3 and partial R3a has a hydrogen permeability coefficient at a temperature of 398K that is less than half the hydrogen permeability coefficient of Cu at a temperature of 398K. According to the above hydrogen permeability coefficient, region R3 exhibits effective hydrogen diffusion suppression characteristics, regardless of the presence or absence of partial R3a, and tends to suppress the deterioration of electrical conductivity characteristics.

[0060] As mentioned above, the resin contained in region R3 has a hydrogen content and hydrogen permeability coefficient similar to that of the glass contained in region R3. Therefore, it can be reasonably concluded that even when region R3 contains resin, there is a tendency to suppress the degradation of hydrogen diffusion suppression characteristics and electrical conductivity characteristics, similar to when region R3 contains glass. In each modified example of the multilayer capacitor C1, region R3 contains the same material as region R3 in the embodiment. Therefore, it can be reasonably concluded that each modified example of the multilayer capacitor C1, like the multilayer capacitor C1 in the embodiment, tends to suppress the deterioration of hydrogen diffusion suppression characteristics and electrical conductivity characteristics.

[0061] As explained above, in the multilayer capacitor C1, the outer conductor includes region R3. Region R3 prevents hydrogen from moving within the outer conductor from region R2 to region R1. Therefore, hydrogen does not easily diffuse into the substrate. The multilayer capacitor C1 suppresses the degradation of its characteristics. For example, the multilayer capacitor C1 suppresses the decrease in insulation resistance. In the multilayer capacitor C1, the outer conductor includes region R2. Region R2 contains a conductive material. Therefore, a plating layer is easily formed in region R2. The multilayer capacitor C1 can easily adopt a configuration in which the plating layer is formed on the outer conductor. In a multilayer capacitor C1, the outer conductor includes region R1. Region R1 contains a conductive material. Therefore, the multilayer capacitor C1 ensures an electrical connection between the inner conductor and the outer conductor.

[0062] In the multilayer capacitor C1, region R3 covers the side surface 3e. In the multilayer capacitor C1, hydrogen is even less likely to diffuse into the element 3. The multilayer capacitor C1 reliably suppresses the degradation of its characteristics.

[0063] In the multilayer capacitor C1, the element 3 includes side 3e and the adjacent side 3a. Region R3 covers side 3a. In the multilayer capacitor C1, hydrogen is even less likely to diffuse due to element 3. The multilayer capacitor C1 more reliably suppresses the degradation of its characteristics.

[0064] In the multilayer capacitor C1, region R1 is in contact with the side surface 3a. Region R1 includes a portion exposed from region R3 on the side surface 3a. In the multilayer capacitor C1, the portion of region R1 exposed from region R3 can be directly connected to region R2. This improves electrical connection within the outer conductor 6. The multilayer capacitor C1 more reliably suppresses performance degradation.

[0065] In the multilayer capacitor C1, region R3 covers region R1 with an area of ​​more than half the surface area of ​​region R1. In the multilayer capacitor C1, region R3 reliably prevents hydrogen from moving from region R2 to region R1 within the outer conductor 6. Therefore, hydrogen is less likely to diffuse through the element 3. The multilayer capacitor C1 more reliably suppresses performance degradation.

[0066] In the multilayer capacitor C1, region R3 has a thickness of 1 μm or more. In the multilayer capacitor C1, region R3 more reliably prevents hydrogen from moving from region R2 to region R1 within the outer conductor. Therefore, hydrogen is less likely to diffuse through element 3. The multilayer capacitor C1 more reliably suppresses performance degradation.

[0067] In a multilayer capacitor C1, in region R3, the thickness T (μm) of region R3 and the coverage C (%) of region R3 on the surface of region R1 are: -2.388T + 69.478 ≤ C ≤ 940 / T It satisfies the relationship. In the multilayer capacitor C1, region R3 more reliably prevents hydrogen from moving from region R2 to region R1 within the outer conductor. Therefore, hydrogen is less likely to diffuse through the element. The multilayer capacitor C1 more reliably suppresses performance degradation.

[0068] In the multilayer capacitor C1, region R3 has a hydrogen content smaller than that of regions R1 and R2, respectively. Alternatively, it has a hydrogen permeability coefficient smaller than that of regions R1 and R2, respectively. In the multilayer capacitor C1, region R3 more reliably prevents hydrogen from moving from region R2 to region R1 within the outer conductor. Therefore, hydrogen is less likely to diffuse through the element. The multilayer capacitor C1 more reliably suppresses performance degradation.

[0069] In the multilayer capacitor C1, region R3 includes a material having a hydrogen permeability coefficient smaller than that of the conductive material included in region R1. In the multilayer capacitor C1, region R3 more reliably prevents hydrogen from moving from region R2 to region R1 within the outer conductor. Therefore, hydrogen is less likely to diffuse through the element. The multilayer capacitor C1 more reliably suppresses performance degradation.

[0070] In the multilayer capacitor C1, the material having a hydrogen permeability coefficient smaller than that of the conductive material contained in region R1 includes glass. In the multilayer capacitor C1, region R3 more reliably prevents hydrogen from moving from region R2 to region R1 within the outer conductor. Therefore, hydrogen is less likely to diffuse through element 3. The multilayer capacitor C1 more reliably suppresses performance degradation.

[0071] In the multilayer capacitor C1, region R3 contains resin. In the multilayer capacitor C1, the resin-containing region R3 more reliably prevents hydrogen from moving from region R2 to region R1 within the outer conductor. Therefore, hydrogen is less likely to diffuse through the element 3. The multilayer capacitor C1 more reliably suppresses performance degradation.

[0072] In the multilayer capacitor C1, the hydrogen permeability coefficient of region R3 at a temperature of 398K is 2.02 × 10⁻⁶. -17 mol-H2 / (m·s·Pa 1 / 2 ) are as follows: In the multilayer capacitor C1, region R3 more reliably prevents hydrogen from moving from region R2 to region R1 within the outer conductor. Therefore, hydrogen is less likely to diffuse through element 3. The multilayer capacitor C1 more reliably suppresses performance degradation.

[0073] In the multilayer capacitor C1, the outer conductor consists of a conductor layer 6a including region R1, a conductor layer 6b including region R2, and an intermediate layer 6c including region R3. In the multilayer capacitor C1, region R3 is definitely located between region R1 and region R2.

[0074] In the multilayer capacitor C1, the conductor layer containing region R2 has a lower glass content than the conductor layer containing region R1. In the multilayer capacitor C1, region R3 more reliably prevents hydrogen from moving from region R2 to region R1 within the outer conductor. Therefore, hydrogen is less likely to diffuse through element 3. The multilayer capacitor C1 more reliably suppresses performance degradation.

[0075] While embodiments of the present invention have been described above, the present invention is not necessarily limited to the embodiments described above, and various modifications are possible without departing from the spirit of the invention.

[0076] In this embodiment, a multilayer capacitor was used as an example of an electronic component, but the applicable electronic components are not limited to multilayer capacitors. Applicable electronic components include, for example, multilayer electronic components such as multilayer inductors, multilayer varistors, multilayer piezoelectric actuators, multilayer thermistors, multilayer solid-state battery components, or multilayer composite components, or electronic components other than multilayer electronic components.

[0077] As can be seen from the descriptions of the embodiments described above, this specification includes disclosures of the following embodiments. (Note 1) The base body including the sides, An internal conductor, which is arranged within the aforementioned body and includes an end exposed on the side surface, An outer conductor is arranged on the aforementioned side and is connected to the aforementioned end of the inner conductor, Equipped with, The aforementioned external conductor is The first region, which is in contact with the aforementioned side surface and is physically connected to the aforementioned end of the aforementioned internal conductor, includes a conductive material. Located at the outermost edge of the outer conductor, a second region containing a conductive material, An electronic component comprising a third region located between the first region and the second region, which is less permeable to hydrogen than the first region and the second region, respectively. (Note 2) The third region is the electronic component described in Appendix 1, which covers the side surface. (Note 3) The aforementioned body includes another side adjacent to the aforementioned side, The third region further covers the other side, and is an electronic component as described in Appendix 1 or 2. (Note 4) The electronic component as described in Appendix 3, wherein the first region is further in contact with the other side surface and includes a portion exposed from the third region on the other side surface. (Note 5) The third region is an electronic component according to any one of the appendices 1 to 4, wherein the third region covers the first region with an area of ​​more than half of the surface area of ​​the first region. (Note 6) The third region is an electronic component described in any one of the appendices 1 to 5, having a thickness of 1 μm or more. (Note 7) In the third region, the thickness T (μm) of the third region and the coverage C (%) of the third region on the surface of the first region are: -2.388T + 69.478 ≤ C ≤ 940 / T An electronic component that satisfies the relationship described in any one of the appendices 1 to 6. (Note 8) The electronic component described in any one of the appendices 1 to 7, wherein the third region has a hydrogen content smaller than that of the first region and the second region, or has a hydrogen permeability coefficient smaller than that of the first region and the second region. (Note 9) The electronic component according to any one of the appendices 1 to 8, wherein the third region includes a material having a hydrogen permeability coefficient smaller than that of the conductive material included in the first region. (Note 10) The electronic component according to Appendix 9, wherein the material having a hydrogen permeability coefficient smaller than that of the conductive material included in the first region includes glass. (Note 11) The third region is an electronic component containing resin, as described in any one of the appendices 1 to 7. (Note 12) The hydrogen permeability coefficient of the third region at a temperature of 398K is 2.02 × 10⁻⁶. -17 mol-H2 / (m·s·Pa 1 / 2 ) The following electronic components listed in any one of the appendices 1 to 11. (Note 13) The electronic component according to any one of the appendices 1 to 12, wherein the outer conductor comprises a conductor layer including the first region, a conductor layer including the second region, and an intermediate layer including the third region. (Note 14) The electronic component according to Appendix 13, wherein the conductive layer including the second region has a glass content less than that of the conductive layer including the first region. (Note 15) The electronic component according to any one of appendices 1 to 14, further comprising a plating layer formed on the outer conductor. [Explanation of Symbols]

[0078] 3...Element, 3a,3e...Side, 5...External electrode, 6...External conductor, 7...Internal electrode, C1...Multilayer capacitor, R1,R3,R2...Region.

Claims

1. The base body including the sides, An internal conductor, which is arranged within the aforementioned body and includes an end exposed on the side surface, An outer conductor is arranged on the aforementioned side and is connected to the aforementioned end of the inner conductor, Equipped with, The aforementioned external conductor is The first region, which is in contact with the aforementioned side surface and is physically connected to the aforementioned end of the aforementioned internal conductor, includes a conductive material. Located at the outermost edge of the outer conductor, a second region containing a conductive material, An electronic component comprising a third region located between the first region and the second region, which is less permeable to hydrogen than the first region and the second region, respectively.

2. The third region covers the side surface, as described in claim 1.

3. The aforementioned body includes another side adjacent to the aforementioned side, The electronic component according to claim 1 or 2, wherein the third region further covers the other side.

4. The electronic component according to claim 3, wherein the first region is further in contact with the other side surface and includes a portion on the other side surface that is exposed from the third region.

5. The electronic component according to claim 1 or 2, wherein the third region covers the first region with an area of ​​more than half of the surface area of ​​the first region.

6. The electronic component according to claim 1 or 2, wherein the third region has a thickness of 1 μm or more.

7. In the third region, the thickness T (μm) of the third region and the coverage C (%) of the third region on the surface of the first region are: -2.388T+69.478≦C≦940 / T An electronic component according to claim 1 or 2 that satisfies the relationship.

8. The electronic component according to claim 1 or 2, wherein the third region has a hydrogen content smaller than the hydrogen content of the first region and the second region, or has a hydrogen permeability coefficient smaller than the hydrogen permeability coefficient of the first region and the second region, respectively.

9. The electronic component according to claim 1 or 2, wherein the third region includes a material having a hydrogen permeability coefficient smaller than that of the conductive material included in the first region.

10. The electronic component according to claim 9, wherein the material having a hydrogen permeability coefficient smaller than that of the conductive material included in the first region includes glass.

11. The electronic component according to claim 1 or 2, wherein the third region includes a resin.

12. The hydrogen permeability coefficient of the third region at a temperature of 398 K is 2.02 × 10⁻⁶. －１７ mol-H ２ / (m・s・Pa １／２ The electronic component according to claim 1 or 2, wherein the electronic component is as follows:

13. The electronic component according to claim 1 or 2, wherein the outer conductor comprises a conductor layer including the first region, a conductor layer including the second region, and an intermediate layer including the third region.

14. The electronic component according to claim 13, wherein the conductive layer including the second region has a glass content less than that of the conductive layer including the first region.

15. The electronic component according to claim 1 or 2, further comprising a plating layer formed on the outer conductor.

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