Substrate processing apparatus and control method

Abstract

To provide a substrate processing apparatus that can reliably perform substrate processing. [Solution] Downstream of the pump 15, a junction pipe 20b branches off, and the system includes multiple branch pipes that send processing liquid to multiple types of processing units in the chamber, and a control unit 139 that controls the pump 15. The multiple branch pipes include a pre-wet pipe PW with the highest flow rate of processing liquid and a pot rinse pipe PTR with a flow rate of processing liquid less than that of the pre-wet pipe PW. A pressure sensor 51 for detecting the pressure of the processing liquid is provided in the pre-wet pipe PW among the multiple branch pipes, and the control unit 139 controls the output of the pump 15 so that the pressure sensor 15 detects a predetermined value.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus including a chamber for performing liquid processing on a substrate in a horizontal posture and a control method thereof. The substrate is, for example, a semiconductor wafer, a substrate for a liquid crystal display, a substrate for an organic EL (Electroluminescence), a substrate for an FPD (Flat Panel Display), a substrate for an optical display, a substrate for a magnetic disk, a substrate for an optical disk, a substrate for a magneto-optical disk, a substrate for a photomask, or a substrate for a solar cell.

Background Art

[0002] Patent Document 1 describes an organic solvent supply source of a substrate processing apparatus. The organic solvent supply source includes a pump and is configured to constantly supply an organic solvent to a nozzle at a predetermined pressure. The nozzle injects the organic solvent sent from the organic solvent supply source toward a substrate in a horizontal posture.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, with the above configuration, if the organic solvent supply source is connected to multiple organic solvent supply destinations, there is no way to keep the pressure in the piping connected to the nozzles that receive the organic solvent constant. The pressure of the organic solvent applied to the nozzle changes depending on the usage status of the organic solvent at the supply destination. That is, in a substrate processing apparatus, if only one nozzle is using the organic solvent, the pressure of the organic solvent applied to the nozzle will be sufficiently high, allowing for proper substrate processing. On the other hand, if many organic solvents are being used simultaneously at multiple nozzles in the substrate processing apparatus, the pressure of the organic solvent applied to the nozzles will decrease, making proper substrate processing impossible. This causes inconsistencies in the substrate processing using organic solvents.

[0005] This invention has been made in view of these circumstances, and aims to provide a substrate processing apparatus that can reliably process substrates. Another objective of this invention is to provide a control method for a substrate processing apparatus that can reliably process substrates. [Means for solving the problem]

[0006] To solve the above-mentioned problems, the present invention adopts the following configuration. In other words, the substrate processing apparatus according to the present invention is A chamber for applying liquid treatment to a substrate in a horizontal position, A tank for storing the processed liquid, A main pipe for circulating the processing liquid from the aforementioned tank, A pump is provided in the main pipe for discharging the processing liquid, Downstream of the pump, the main pipe branches off, and multiple branch pipes are formed to supply processing liquid to multiple types of processing units within the chamber. The system comprises a control unit for controlling the pump, The aforementioned plurality of branch pipes include a first branch pipe with the highest flow rate of the processing liquid and a second branch pipe with a flow rate of the processing liquid less than that of the first branch pipe. A pressure gauge for detecting the pressure of the processing liquid is provided in the first branch pipe among the multiple branches. The control unit controls the pump output so that the pressure gauge detects a predetermined value. It is characterized by the following:

[0007] [Function and Effects] According to the above configuration, the chamber includes a pressure gauge for detecting the liquid pressure in the first branch pipe and a control unit for controlling the pump. The first branch pipe has a high flow rate of processing liquid, and the second branch pipe has a low flow rate of processing liquid. The control unit controls the pump output so that the pressure gauge detects a predetermined value. Even if the liquid pressure in the first branch pipe decreases due to an increase in liquid flow in the second branch pipe, the pump output is increased to compensate for this decrease. Since the first branch pipe requires a large amount of liquid, a high pressure is always required inside the first branch pipe. The above configuration satisfies these requirements, and the chamber can perform substrate processing under appropriate conditions. With this configuration, substrate processing can be reliably performed.

[0008] Furthermore, in the above configuration, Preferably, the first branch pipe is connected to a nozzle that discharges the processing liquid onto the upper surface of the substrate inside the chamber.

[0009] [Function / Effect] According to the above configuration, the first branch pipe is connected to a nozzle that discharges the processing liquid onto the upper surface of the substrate inside the chamber. The above configuration allows for the supply of processing liquid at an appropriate pressure to a nozzle that requires a large amount of processing liquid inside the chamber.

[0010] Furthermore, in the above configuration, The second branch pipe is preferably a back-rinse pipe for cleaning the back surface of the substrate in the chamber.

[0011] [Function / Effect] According to the above configuration, the second branch pipe is a back-rinse pipe for cleaning the back surface of the substrate in the chamber. As a result, the pressure applied to the nozzle provided in the first branch pipe does not change whether or not back-rinsing is performed. With this configuration, substrate processing can be reliably performed.

[0012] Furthermore, in the above configuration, The second branch pipe is preferably a pot rinse pipe for cleaning the nozzle of the chamber.

[0013] [Function / Effect] According to the above configuration, the second branch pipe is a pot rinse pipe for cleaning the nozzles of the chamber. As a result, the pressure applied to the nozzles provided in the first branch pipe does not change whether or not pot rinsing is performed. With this configuration, substrate processing can be reliably performed.

[0014] Furthermore, in the above configuration, The second branch pipe is preferably an edge rinsing pipe for cleaning the substrate periphery of the chamber.

[0015] [Function / Effect] According to the above configuration, the second branch pipe is an edge rinsing pipe for cleaning the periphery of the substrate in the chamber. As a result, the pressure applied to the nozzle provided in the first branch pipe does not change whether or not edge rinsing is performed. With this configuration, substrate processing can be reliably performed.

[0016] In the above configuration, The second branch pipe is preferably equipped with a regulator that reduces the liquid pressure.

[0017] [Effects] With the above configuration, the amount of liquid flowing through the second branch pipe can be suppressed, thereby reducing unnecessary consumption of the liquid.

[0018] Furthermore, the present invention is particularly suitable for substrate processing apparatus having a plurality of chambers.

[0019] [Function and Effect] Substrate processing apparatuses having a plurality of chambers often have the first branch pipe and the second branch pipe simultaneously allowing liquid to flow through them. Specifically, for example, while performing processing using the branch pipe in the first chamber, liquid processing may be simultaneously performed by allowing liquid to flow through the second branch pipe in the second chamber. If a plurality of chambers are provided in this way, the pressure in the first branch pipe is likely to decrease. Even in a substrate processing apparatus having such a configuration, substrate processing can be executed without reducing the pressure of the liquid in the first branch pipe.

[0020] Further, the present invention is suitable for a substrate processing apparatus in which the first branch pipe is downstream of the second branch pipe.

[0021] [Function and Effect] In a substrate processing apparatus in which the first branch pipe is downstream of the second branch pipe, the pressure in the first branch pipe is particularly likely to decrease due to the flow of liquid in the second branch pipe. According to the present invention, since the pressure in the first branch pipe can be surely made constant by feedback control, such a problem does not occur.

[0022] This specification also discloses the following inventions. A control method for a substrate processing apparatus including: a chamber that performs liquid processing while rotating a substrate in a horizontal posture; a tank that holds liquid; a main pipe that allows liquid to flow from the tank to the chamber; a pump that sends out liquid provided in the main pipe; a first branch pipe and a second branch pipe formed by branching of the main pipe downstream of the pump; and a pressure gauge that detects the pressure of the liquid provided in the first branch pipe, the method comprising: performing feedback control of the pump based on the detected pressure of the liquid and being characterized by the above.

[0023] [Function and Effect] According to the above configuration, the same effects as those of the substrate processing apparatus of the present invention are achieved.

Effect of the Invention

[0024] According to the present invention, a substrate processing apparatus capable of surely performing substrate processing can be provided.

Brief Description of the Drawings

[0025] [Figure 1] This is a plan view illustrating the overall configuration of the substrate processing apparatus according to the embodiment. [Figure 2] This is a piping diagram illustrating the configuration of the degassing unit and its surroundings according to the embodiment. [Figure 3] This is a cross-sectional view illustrating the degassing mode of the degassing device according to the embodiment. [Figure 4] This is a cross-sectional view illustrating the degassing mode of the degassing device according to the embodiment. [Figure 5] This is a cross-sectional view illustrating the configuration of the foaming device according to the embodiment. [Figure 6] This is a cross-sectional view illustrating the configuration of the foaming device according to the embodiment. [Figure 7] This is a cross-sectional view illustrating the configuration of the foaming device according to the embodiment. [Figure 8] This is a flowchart illustrating the operation of the degassing unit according to the embodiment. [Figure 9] This is a piping diagram illustrating the operation of the degassing unit according to the embodiment. [Figure 10] This is a piping diagram illustrating the operation of the degassing unit according to the embodiment. [Figure 11] This is a piping diagram illustrating the operation of the degassing unit according to the embodiment. [Figure 12] This is a piping diagram illustrating the operation of the degassing unit according to the embodiment. [Figure 13] This is a piping diagram illustrating the operation of the degassing unit according to the embodiment. [Figure 14] This is a piping diagram illustrating the operation of the degassing unit according to the embodiment. [Figure 15] This is a piping diagram illustrating the effects of the embodiment. [Figure 16] This is a piping diagram illustrating the effects of the embodiment. [Figure 17] This is a cross-sectional view illustrating the configuration of a degassing device according to one modified example of the present invention. [Figure 18] This is a piping diagram illustrating the configuration of a degassing device according to one modified example of the present invention. [Figure 19] This is a piping diagram illustrating the configuration of a degassing device according to one modified example of the present invention. [Figure 20] This is a plan view illustrating the overall configuration of a substrate processing apparatus according to one modified example of the present invention. [Figure 21] This is a piping diagram illustrating the configuration of a degassing unit and its surrounding area according to one modified example of the present invention. [Modes for carrying out the invention]

[0026] The degassing device according to the present invention is mounted, for example, on a substrate processing apparatus that processes semiconductor substrates. Therefore, as an embodiment for carrying out the present invention, a substrate processing apparatus that performs the necessary substrate processing before and after exposure processing in a photolithography process will be described as an example. [Examples]

[0027] <1. Overall Structure> Figure 1 is a plan view showing the overall configuration of the substrate processing apparatus in this example. The substrate processing apparatus 1 in this example is connected to an external exposure machine 2 for exposure. The substrate processing apparatus 1 further includes an indexer block 3, a coater block 5, a developer block 7, and an interface block 9. The indexer block 3, coater block 5, developer block 7, and interface block 9 are arranged in this order to form the substrate processing apparatus 1. The substrate processing apparatus 1 has a housing 1A that houses each block. The housing 1A has a substantially rectangular shape in plan view. A load port 4 is provided protruding from the wall surface at one end of the housing 1A.

[0028] In this specification, for convenience, the direction in which the indexer block 3, coater block 5, developer block 7, and interface block 9 in the substrate processing apparatus 1 are arranged is referred to as the front-to-back direction (X direction). This X direction extends horizontally. The direction from the coater block 5 toward the indexer block 3 in the substrate processing apparatus 1 is referred to as the front. The direction opposite to the front is referred to as the rear. The horizontal direction perpendicular to the X direction is referred to as the left-to-right direction (Y direction). The Y direction is also the direction in which the multiple load ports 4 are arranged. For convenience, one side of the Y direction is referred to as the right, and the opposite direction of the right is referred to as the left. The height direction (Z direction) is perpendicular to both the X and Y directions and coincides with the vertical direction. In each figure, front, rear, right, left, up, and down are indicated as appropriate for reference.

[0029] <2. Indexer Block> As shown in Figure 1, the indexer block 3 is equipped with a load port 4, which is the entry point for when a carrier C, which stores multiple substrates W in a horizontal position at predetermined intervals in the Z direction, is loaded into the block. The load port 4 can be used to place the carrier C.

[0030] Multiple substrates (for example, 25) are stacked and stored in a single carrier C. The carrier C containing the unprocessed substrates W to be loaded into the substrate processing device 1 is first placed on the load port 4.

[0031] The indexer block 3 houses an indexer robot IR capable of transporting horizontally positioned substrates W one at a time. The indexer robot IR can access any of the four load ports 4 and the path 34 located at the boundary between the indexer block 3 and the coater block 5 shown in Figure 1, and transfers the substrates W between the path 34 and the carrier C installed at the load port 4. The transfer of substrates W by the indexer robot IR is realized by the hand 36.

[0032] <3. Coater Block> The coater block 5 is primarily configured to deposit a photoresist layer on the substrate W before exposure processing. The coater block 5 has a second row CL2 located at the rear of the pass 34, a first row CL1 located to the left of the second row CL2, and a third row CL3 located to the right of the second row CL2. Therefore, the second row CL2 is positioned between the first row CL1 and the third row CL3 from the left and right.

[0033] In the first row CL1, chemical treatment chambers are arranged in the X direction, each having a spin chuck 8 for rotatably supporting the substrate W and a nozzle 10 for discharging the chemical solution. Therefore, the chemical treatment chamber is configured to apply the chemical solution to the surface of the substrate W. The chemical treatment chamber has a bark chamber 45 for depositing an anti-reflective film and resist chambers 41, 42, 43, 44 for depositing a photoresist layer. Figure 1 illustrates how the first row CL1 can have two resist chambers 41, 42, 43, 44 or two bark chambers 45 arranged front to back. In the first row CL1, the bark chamber 45 and the resist chambers 41, 42, 43, 44 are stacked across three layers. The bark chamber 45 and the resist chambers 41, 42, 43, 44 can be rearranged as appropriate. Furthermore, the first row CL1 can have four or more layers of chemical treatment chambers. The resist chambers 41, 42, 43, and 44 are configured to apply liquid treatment to a substrate W in a horizontal position, and correspond to the chambers of the present invention.

[0034] The edge exposure section is provided in the third row CL3 (described later) or in the sixth row CL6 of the developer block 7 (described later). The edge exposure section can perform edge exposure related to the removal of the photoresist layer at the peripheral edge of the substrate W.

[0035] In addition, the first row CL1 is equipped with a degassing chamber 6, which has a first degassing device 6a and a second degassing device 6b that supply degassed solvent to the resist chambers 41, 42, 43, and 44. The configuration of the degassing chamber 6 will be described later with reference to Figure 2. The degassing chamber 6 supplies liquid to the resist chambers 41, 42, 43, and 44, which will be described later. In this example, the degassing chamber 6 can also supply liquid to the bark chamber 45.

[0036] The second row CL2 is a passage through which the first center robot C1, which transports the substrate W in a horizontal position, moves back and forth. In addition to the path 34 described above, the first center robot C1 can access the bark chamber 45, resist chambers 41, 42, 43, and 44 in the first row CL1, the heat treatment chamber 55 and cooling section 58 provided in the third row CL3 (described later), and the path 57 provided at the boundary between the coater block 5 and the developer block 7 shown in Figure 1. The resist chambers 41, 42, 43, and 44 correspond to the chambers of the present invention.

[0037] The first center robot C1 is capable of moving forward and backward in the X direction and moving up and down in the Z direction, enabling it to transport the substrate W to each accessible position. Furthermore, the first center robot C1 can orient the hand 56 that holds the substrate W in any direction (forward, backward, left, or right).

[0038] In the third row CL3, a heat treatment chamber 55 for heating the substrate W and a cooling section 58 for cooling the substrate W are arranged in the X direction. The heat treatment chamber 55 consists of a circular hot plate 55a for heating the substrate W and a circular post-heating treatment plate 55b for performing post-heating treatment to lower the temperature of the high-temperature substrate W, arranged in the Y direction. On the other hand, the cooling section 58 is provided with a circular cooling treatment plate 58a for cooling the substrate W at room temperature. In the third row CL3, the heat treatment chamber 55 or the cooling section 58 are not only arranged in the X direction but are also stacked in the Z direction to form a stack of chambers. The number of layers in the stack can be changed as appropriate.

[0039] <4. Developer Block> The developer block 7 is primarily configured to develop the substrate W after exposure processing. The developer block 7 has a fifth row CL5 located at the rear of the pass 57, a fourth row CL4 located to the left of the fifth row CL5, and a sixth row CL6 located to the right of the fifth row CL5. Therefore, the fifth row CL5 is positioned between the fourth row CL4 and the sixth row CL6 from the left and right.

[0040] In the fourth row CL4, developing chambers 77, each having a spin chuck 8 for rotatably supporting the substrate W and a nozzle 10 for discharging chemicals, are arranged in the X direction. Figure 1 illustrates how two developing chambers 77 are arranged front to back in the fourth row CL4. The developing chambers 77 are stacked in the fourth row CL4. The number of layers in the stack composed of developing chambers 77 can be changed as appropriate.

[0041] The fifth row CL5 is a passage through which the second center robot C2, which transports the substrate W in a horizontal position, moves back and forth. In addition to the aforementioned path 57, the second center robot C2 can access the developing chamber 77 in the fourth row CL4, the heat treatment chamber 75, cooling section 78, and path 79 located in the sixth row CL6, which will be described later.

[0042] The second center robot C2, like the first center robot C1, is able to move forward and backward in the X direction and move up and down in the Z direction so that it can transport the substrate W to each accessible position. Furthermore, the second center robot C2 can orient the hand 76 that holds the substrate W in at least forward, left, or right directions.

[0043] In the sixth row CL6, a heat treatment chamber 75 for heating the substrate W and a cooling section 78 for cooling the substrate W are arranged in the X direction. The heat treatment chamber 75 has the same configuration as the heat treatment chamber 55 in the third row. Therefore, the heat treatment chamber 75 is composed of a circular hot plate 75a and a circular post-heating treatment plate 75b arranged in the Y direction. The cooling section 78 has the same configuration as the cooling section 58 in the third row CL3. Therefore, the cooling section 78 is provided with a circular cooling treatment plate 78a.

[0044] The path 79 is located at the rear end of the sixth row CL6. The horizontally positioned substrate W can move back and forth between the developer block 7 and the interface block 9 via the path 79.

[0045] <5. Interface Block> The interface block 9 includes a path 95 capable of cooling the placed substrate W, a first robot R1 capable of accessing the path 95 and the aforementioned path 79, and a second robot R2 capable of accessing the path 95 and the exposure machine 2. The first robot R1 has a hand 961 capable of gripping the horizontally positioned substrate W placed in the path 79, and the second robot R2 has a hand 962 capable of gripping the horizontally positioned substrate W placed in the path 95.

[0046] The paths 95 are stacked in the Z direction to form a laminate.

[0047] <6. Exposure Machine> The exposure machine 2 receives the substrate W before exposure processing, which is transported by the second robot R2, and performs exposure processing to imprint the device circuit pattern onto the photoresist layer of the substrate W. The substrate W after exposure processing is then passed to the second robot R2. Specific components of the exposure machine 2 include, for example, a stepper and a scanner.

[0048] <7. Control Unit> As shown in Figure 1, the substrate processing apparatus 1 includes a control unit 139 for controlling the apparatus. Although not shown in Figure 1, the control unit 139 is also provided with a corresponding memory unit. The control unit 139 is composed of, for example, a CPU (Central Processing Unit). The specific configuration of the control unit is not limited; for example, each control related to the substrate processing apparatus 1 may be configured with a single processor, or each control may be configured with separate processors.

[0049] Control related to the control unit 139 includes, for example, control of the indexer robot IR, the first center robot C1, the second center robot C2, the first robot R1, and the second robot R2.

[0050] In other words, the control unit 139 in this example is configured to control pumps 15 and 25, and controls pump 15 based on the output of sensor 14. Specifically, when sensor 14 determines that degassing is complete, the control unit 139 stops pump 15 and terminates the degassing mode described later.

[0051] The control unit 139 controls the output of the pump 15 so that the pressure sensor 51 reaches a predetermined value.

[0052] The control unit 139 in this example has the function of switching the device used for degassing between the first degassing device 6a and the second degassing device 6b. The way in which the control unit 139 in this example functions as a switching control unit will be described later.

[0053] The memory unit stores programs and parameters related to control. The memory unit may consist of a single device or individual devices corresponding to each control. Furthermore, the substrate processing apparatus 1 in this example is not particularly limited in its configuration of the devices that realize the memory unit.

[0054] <8. Degassing Chamber> Figure 2 illustrates the configuration of the degassing chamber 6 and how it is connected to the various piping of the resist chambers 41, 42, 43, and 44. As shown in Figure 2, the degassing chamber 6 is equipped with multiple degassing devices. In this example, the degassing chamber 6 is equipped with a first degassing device 6a and a second degassing device 6b. In this example, the first degassing device 6a and the second degassing device 6b are configured to alternately degas the solvent, thereby ensuring an uninterrupted supply of the degassed liquid.

[0055] As the solvent, the photoresist solution used for substrate processing in the resist chambers 41, 42, 43, and 44 during resist film formation can be used. Examples of solvents include organic solvents such as thinner, PGME (Propyleneglycol monomethyl ether), PGMEA (Propyleneglycol monomethyl ether acetate), ethyl lactate, cyclohexane, MIBC (4-Methyl-2-pentanol), and IPA (Isopropyl alcohol).

[0056] The specific configuration of the first degassing device 6a will be described with reference to Figure 2. As shown in Figure 2, the first degassing device 6a comprises a first tank 11 for storing solvent, a three-way valve 12 for injecting solvent into the first tank 11, a foamer 13 for foaming the solvent flowing out of the first tank 11, a sensor 14 for detecting the foaming state of the solvent located downstream of the foamer 13, a pump 15 located downstream of the sensor 14, and a valve 16 located downstream of the pump 15. The first tank 11 corresponds to the tank of the present invention and is configured to store the liquid to be degassed. The foamer 13 is configured to generate bubbles from the liquid, and the pump 15 is configured to circulate the liquid to the foamer 13.

[0057] The first tank 11 is provided with three through-holes. Specifically, an inlet 105 and an outlet 106 are provided on the bottom surface of the first tank 11, and an exhaust port 107 is provided on the lid of the first tank 11.

[0058] <9. First degassing device: Piping and three-way valve> The piping and three-way valve 12 relating to the first degassing device 6a will now be described. The inlet 105 of the first tank 11 is located downstream of the three-way valve 12, and the inlet 105 and the three-way valve 12 are connected to each other via the inlet piping 19a.

[0059] The three-way valve 12 is connected to the solvent supply source 50 through the upstream piping 20c. The three-way valve 12 is also connected to the pump 15 through the return piping 19c. Therefore, the three-way valve 12 can connect the solvent supply source 50 to the inlet 105, or it can connect the pump 15 to the inlet 105. The three-way valve 12 can selectively choose to connect either the solvent supply source 50 to the inlet 105 or the pump 15 to the inlet 105. For example, in Figure 2, the three-way valve 12 is in a closed state, blocking the flow path from the solvent supply source 50 to the inlet 105, so no solvent flows from the solvent supply source 50 to the inlet 105. The flow of solvent from the solvent supply source 50 to the inlet 105 will be described later. Furthermore, the three-way valve 12 can also be in a blocked state, preventing either the solvent supply source 50 or the pump 15 from connecting to the inlet 105. The three-way valve 12 in a blocked state will be described later.

[0060] The return pipe 19c connects the first tank 11 and the foaming device 13, and is configured to circulate the liquid between the first tank 11 and the foaming device 13.

[0061] The outlet 106 of the first tank 11 is located upstream of the foamer 13, and the outlet 106, foamer 13, sensor 14, pump 15, and valve 16 are arranged in this order from upstream to downstream, and they are connected in series to each other via the outlet piping 19b. Therefore, the solvent flowing out from the outlet 106 of the first tank 11 passes through the foamer 13, sensor 14, pump 15, and reaches the valve 16.

[0062] The return pipe 19c is a pipe that branches off from the outflow pipe 19b between the pump 15 and the valve 16. The return pipe 19c connects the branching point 19d with the outflow pipe 19b to the three-way valve 12.

[0063] As shown in Figure 3, when the three-way valve 12 in this example is switched to the return pipe 19c side and the valve 16 is closed, the first degassing device 6a enters degassing mode. Degassing mode is a mode in which gas dissolved in the solvent stored in the first tank 11 is removed from the solvent by foaming it with the foamer 13, and the solvent is circulated between the first tank 11 and the foamer 13 via the return pipe 19c.

[0064] As shown in Figure 4, when the three-way valve 12 in this example is closed and the valve 16 is open, the first degassing device 6a enters liquid supply mode. Liquid supply mode is a mode in which the solvent stored in the first tank 11 is supplied to the resist chambers 41, 42, 43, and 44. The closed state of the three-way valve 12 means that the three-way valve 12 does not allow the flow of solvent.

[0065] The first tank 11 is equipped with an exhaust port 107. This exhaust port 107 is connected to a drain 18 through a valve 17. The exhaust port 107 is provided for the purpose of releasing the gas that accumulates at the top of the first tank 11 from the first tank 11. In the following description of this example, the valve 17 will be opened as appropriate to release gas from the first tank 11.

[0066] <10. First degassing device: foaming device> Figure 5 illustrates the configuration of the foamer 13 in this example. The foamer 13 in this example is a tubular structure installed between the upstream and downstream outlet pipes 19b. Specifically, the foamer 13 is equipped with a cylindrical base 131. The base 131 has an inlet for introducing the solvent and an outlet for releasing the solvent. The inlet of the base 131 is connected to the upstream outlet pipe 19b via a fitting 101. The outlet of the base 131 is connected to the downstream outlet pipe 19b via a fitting 102.

[0067] The inner diameter of the base 131 varies depending on the part of the base 131. Specifically, the base 131 has a large inner diameter at the inlet and outlet, and a small inner diameter at the central section CT sandwiched between the inlet and outlet. A first transition section CH1, in which the inner diameter gradually narrows, is provided between the inlet and the central section CT. A second transition section CH2, in which the inner diameter gradually widens, is provided between the central section CT and the outlet.

[0068] The central CT is a passage with a narrower liquid flow path than the second transition section CH2, and is configured to introduce liquid into the second transition section CH2. The first transition section CH1 is configured to introduce the liquid to be degassed into the central CT.

[0069] The needle 133 is configured to extend and retract freely within the internal space of the base 131, which is located in the central CT of the base 131. By changing the degree of extension of the needle 133, the resistance to the solvent flow in the base 131 can be adjusted. For example, when the needle 133 is completely withdrawn from the internal space of the base 131, the foamer 13 is in a fully open state. Conversely, when the needle 133 is completely extended into the internal space of the base 131, the foamer 13 is in a fully closed state.

[0070] The motor 132 is configured to drive the needle 133. The foaming device control unit 134 controls the motor 132 to enable the opening and closing operation of the foaming device 13.

[0071] Needle 133 is configured to adjust the cross-sectional area of ​​the flow path formed by the central CT.

[0072] When the foamer 13 is fully open, the resistance to the flow of solvent through the base 131 is at its lowest, making it easier for the solvent to flow into the base 131. When the foamer 13 is fully closed, the resistance to the flow of solvent through the base 131 is at its highest, making it difficult for the solvent to flow into the base 131, or causing the flow to stop. When the foamer 13 is fully closed, the passage of solvent may or may not be permitted.

[0073] Figure 6 shows how the solvent foams when the foamer 13 is nearly fully open. When the solvent passes through the foamer 13 in this state, the pressure applied to the solvent at the central CT of the base 131 increases. This pressure returns to normal when the solvent moves away from the central CT. This pressure change causes the gas dissolved in the solvent to become unable to remain dissolved and turns into bubbles B. In this way, the foamer 13 foams the solvent.

[0074] Figure 7 shows how the solvent foams when the foamer 13 is nearly completely closed. When the solvent is passed through the foamer 13 in this state, the pressure applied to the solvent at the central CT of the base 131 becomes even higher than in Figure 6. This pressure drops sharply as the solvent moves away from the central CT. This pressure change causes the gas dissolved in the solvent to no longer remain dissolved, generating many bubbles B. In this way, the amount of bubbles generated in the solvent can be adjusted by opening and closing the foamer 13.

[0075] <11. First degassing device: Sensor> Sensor 14 is located downstream of the foaming device 13 and measures the amount of bubbles contained in the flowing solvent. Sensor 14 consists of a light emitter that emits laser light and a light receiver that detects the laser light. The light emitter and light receiver are installed on either side of the solvent passage. If there are many bubbles in the flowing solvent, the laser light will be disturbed by the bubbles B. If the flowing solvent does not contain bubbles, such disturbance will not occur. In this way, sensor 14 can measure the amount of bubbles in the flowing solvent by the output of the light receiver. Sensor 14 is not limited to an optical sensor; for example, it can also be configured as an ultrasonic sensor. In this way, sensor 14 is configured to detect the degassing status of the liquid during the degassing process.

[0076] <12. First degassing device: pump> Pump 15 is located downstream of sensor 14 and is configured to create a flow of solvent. When pump 15 is activated, the solvent stored in the first tank 11 passes through outlet 106, foamer 13, and sensor 14 to branching point 19d. Thus, pump 15 is installed in the outflow piping 19b and delivers the processed liquid.

[0077] A specific example of pump 15 is a Revitro pump. A Revitro pump is a pump that, when a pressure set value is given by the control unit, can maintain a constant liquid pressure by adjusting the rotation speed of the motor. Using such a Revitro pump, even in a configuration with multiple nozzles 10 downstream, the amount of liquid discharged from each nozzle 10 can be kept constant. The pump 15 in this example is not limited to the Revitro pump described above, and other pumps can also be used.

[0078] <13. Second degassing device> As shown in Figure 2, the degassing chamber 6 in this example is equipped with two degassing devices. Specifically, the degassing chamber 6 has the first degassing device 6a described above, and a second degassing device 6b having the same configuration as the first degassing device 6a. The second degassing device 6b can be operated in degassing mode and liquid feeding mode, similar to the first degassing device 6a.

[0079] In other words, the second degassing device 6b, like the first degassing device 6a, has a second tank 21, a three-way valve 22, a foaming device 23, a sensor 24, a pump 25, and a valve 26. The second tank 21 is provided with three through-holes: an inlet 205, an outlet 206, and an exhaust port 207, just like the first degassing device 6a described above. Also, the configuration in which the inlet pipe 29a connects the inlet 205 and the three-way valve 22, the three-way valve 22 can connect the solvent supply source 50 and the inlet 205, and can also connect the pump 25 and the inlet 105 via the return pipe 29c, is also the same as the first degassing device 6a. In addition, the foaming device 23, sensor 24, pump 25, and valve 26 are arranged in series via the outlet pipe 29b, and the return pipe 29c connects the branching point 29d and the three-way valve 22 is also the same as the first degassing device 6a. Furthermore, similar to the first degassing device 6a, the second tank 21 is equipped with an exhaust port 207. This exhaust port 207 is connected to a drain 28 through a valve 27.

[0080] In this example, the degassing chamber 6 has a configuration in which a first degassing device 6a and a second degassing device 6b are arranged in parallel. That is, the upstream piping 20c connected to the solvent supply source 50 is branched at branching point 19e into a branch pipe leading to the first degassing device 6a and a branch pipe leading to the second degassing device 6b. The outflow piping 19b extending from the first degassing device 6a and the outflow piping 29b extending from the second degassing device 6b are connected to the confluence piping 20b at confluence point 20a. In other words, the solvent in the solvent supply source 50 is degassed in either the first degassing device 6a or the second degassing device 6b and then reaches the confluence piping 20b. The outflow piping 19b and the confluence piping 20b are configured to circulate the solvent from the first tank 11 and correspond to the main pipe of the present invention.

[0081] <14. Supplying liquid to the resist chamber> Next, referring to Figure 2, we will describe the piping used when the degassed solvent flowing through the junction pipe 20b is supplied to the resist chambers 41, 42, 43, and 44. These pipes constitute the coater block 5. That is, the solvent that reaches the junction pipe 20b is distributed to the four resist chambers 41, 42, 43, and 44 through various types of piping.

[0082] The junction pipe 20b is in communication with regulators 52, 53, 54, and pressure sensor 51. Valves 61, etc., are installed in the middle of the piping and can control whether or not the solvent passes downstream. Regulators 52, etc., are installed in the middle of the piping and can control the pressure of the solvent downstream. Regulators 52, etc., can set the pressure of the solvent downstream within a range from 0 to a predetermined pressure. The predetermined pressure is the upstream pressure of regulators 52, etc. In other words, regulators 52, etc., cannot set the pressure of the solvent on the secondary side to a higher pressure than the pressure of the solvent on the primary side.

[0083] The junction pipe 20b has a first branching point TP1, a second branching point TP2, and a third branching point TP3, from which various branch pipes branch off. At the first branching point TP1, a pot rinse pipe PTR branches off from the junction pipe 20b toward the regulator 52. The regulator 52 is located midway along the pot rinse pipe PTR. Furthermore, the junction pipe 20b has a second branching point TP2 downstream of the first branching point TP1, and at the second branching point TP2, a back rinse pipe BR and a cup rinse pipe CR branch off from the junction pipe 20b toward the regulator 53. The regulator 53 is located midway along the back rinse pipe BR and the cup rinse pipe CR. Similarly, the junction pipe 20b has a third branching point TP3 downstream of the second branching point TP2, and at the third branching point TP3, an edge rinse pipe EBR branches off from the junction pipe 20b toward the regulator 54. Regulator 54 is located midway through the edge rinse piping EBR.

[0084] Pot rinse piping PTR, back rinse piping BR, cup rinse piping CR, and edge rinse piping EBR correspond to the second branch pipes of this invention.

[0085] At the third branching point TP3, the pre-wet pipe PW branches off from the confluence pipe 20b. The pre-wet pipe PW corresponds to the first branch pipe of the present invention. Thus, the substrate processing apparatus 1 in this example is formed by the branching of the confluence pipe 20b downstream of the pump 15, and has multiple branch pipes that supply solvent to multiple types of processing units within the resist chamber 41. Specifically, the branch pipes are the first branch pipe, the second branch pipe, and so on. In other words, the branch pipes in this example include the pre-wet pipe PW, which has the highest solvent flow rate, and the pot rinse pipe PTR, which has a solvent flow rate lower than that of the pre-wet pipe PW.

[0086] The first branch pipe, the pre-wet pipe PW, is connected to a nozzle 10 that discharges solvent onto the upper surface of the substrate W in the resist chambers 41, 42, 43, and 44. The first branch pipe, the pre-wet pipe PW, is downstream of the second branch pipes described above: the pot rinse pipe PTR, the back rinse pipe BR, the cup rinse pipe CR, and the edge rinse pipe EBR.

[0087] The second branch pipe, the pot rinse pipe PTR, branches into four pot rinse branch pipes PTR1, PTR2, PTR3, and PTR4. These are distributed to the respective resist chambers 41, 42, 43, and 44. Similarly, the second branch pipe, the back rinse pipe BR, branches into four back rinse branch pipes BR1, BR2, BR3, and BR4. These are distributed to the respective resist chambers 41, 42, 43, and 44. Similarly, the second branch pipe, the cup rinse pipe CR, branches into four cup rinse branch pipes CR1, CR2, CR3, and CR4. These are distributed to the respective resist chambers 41, 42, 43, and 44. Similarly, the second branch pipe, the edge rinse pipe EBR, branches into four edge rinse branch pipes EBR1, EBR2, EBR3, and EBR4. These are distributed to the respective resist chambers 41, 42, 43, and 44. Similarly, the pre-wet piping PW, which is the second branch pipe, is distributed to four pre-wet branch pipes PW1, PW2, PW3, and PW4. These are then distributed to the respective resist chambers 41, 42, 43, and 44.

[0088] The pressure sensor 51 is a pressure gauge installed between the third branching point TP3 and the valve 61, and is configured to measure the pressure applied to the solvent leading to the valve 61. Downstream of the pressure sensor 51, in addition to valve 61, valves 62, 63, and 64 are connected in parallel.

[0089] The resist chamber 41 is equipped with multiple solvent discharge ports, each consisting of a nozzle or the like. The coater block 5 is equipped with valves that control whether or not to discharge liquid from each of the discharge ports.

[0090] The coater block 5 is equipped with the following pipes for supplying solvent to the resist chamber 41: a pot rinse branch pipe PTR1, a back rinse branch pipe BR1, a cup rinse branch pipe CR1, an edge rinse branch pipe EBR1, and a pre-wet branch pipe PW1.

[0091] The pot rinse branch pipe PTR1 is a pipe intended to supply solvent to a standby pot for cleaning the nozzle 10. Pot rinsing is the cleaning process of a standby pot where the resist nozzle is waiting. The solvent supplied to the standby pot can clean the tip of the nozzle 10 that discharges the photoresist liquid. In addition, by filling the standby pot with solvent vapor, drying of the tip of the nozzle 10 can be suppressed. The flow rate of solvent to the resist chamber 41 during pot rinsing is, for example, 95 ml / min to 130 ml / min.

[0092] The back rinse branch pipe BR1 is a pipe intended to supply solvent to the resist chamber 41 during back rinsing, which cleans the back surface of the substrate W. The cup rinse branch pipe CR1 is a pipe intended to supply solvent to the resist chamber 41 when cleaning the cup, which prevents the photoresist solution from splashing out of the spin chuck 8. The flow rate of solvent to the resist chamber 41 during back rinsing is, for example, 100 ml / min to 130 ml / min.

[0093] The edge rinse branch pipe EBR1 is a pipe intended to supply solvent to the resist chamber 41 when removing the photoresist solution from the peripheral area of ​​a substrate W coated with photoresist. The flow rate of solvent to the resist chamber 41 during edge rinsing is, for example, 15 ml / min to 30 ml / min.

[0094] The pre-wet branch pipe PW1 is a pipe intended to supply solvent to the resist chamber 41 during the pre-wetting process, which is performed prior to supplying the photoresist solution to the substrate W. The flow rate of solvent to the resist chamber 41 during the pre-wetting process is, for example, 75 ml / min to 150 ml / min.

[0095] The pot rinse branch pipe PTR1 is connected to regulator 52. Similarly, the back rinse branch pipe BR1 and the cup rinse branch pipe CR1 are connected to regulator 53. And the edge rinse branch pipe EBR1 is connected to regulator 54.

[0096] The pre-wet branch pipe PW1 is connected directly to the pressure sensor 51 without going through a regulator. Pre-wetting requires a relatively large amount of solvent, and a high pressure is desirable for the pre-wet branch pipe PW1. In this example, in response to this requirement, a regulator to reduce the solvent pressure is not provided upstream of the pre-wet branch pipe PW1.

[0097] Valve 91 is located in the middle of the pot rinse branch pipe PTR1 and controls whether or not solvent is allowed to flow through the pot rinse branch pipe PTR1. Valve 81 is located in the middle of the back rinse branch pipe BR1 and the cup rinse branch pipe CR1 and controls whether or not solvent is allowed to flow through the back rinse branch pipe BR1 and the cup rinse branch pipe CR1. Valve 71 is located in the middle of the edge rinse branch pipe EBR1 and controls whether or not solvent is allowed to flow through the edge rinse branch pipe EBR1. Valve 61 is located in the middle of the pre-wet branch pipe PW1 and controls whether or not solvent is allowed to flow through the pre-wet branch pipe PW1.

[0098] The coater block 5 has multiple resist chambers similar to the resist chamber 41. The piping that supplies solvent to these resist chambers has the same configuration as that of the resist chamber 41.

[0099] In other words, the coater block 5 is equipped with the following pipes for supplying solvent to the resist chamber 42: a pot rinse branch pipe PTR2, a back rinse branch pipe BR2, a cup rinse branch pipe CR2, an edge rinse branch pipe EBR2, and a pre-wet branch pipe PW2.

[0100] The pot rinse branch pipe PTR2 is connected to regulator 52. Similarly, the back rinse branch pipe BR2 and the cup rinse branch pipe CR2 are connected to regulator 53. The edge rinse branch pipe EBR2 is connected to regulator 54. The pre-wet branch pipe PW2 is connected directly to the pressure sensor 51 without going through a regulator.

[0101] Valve 92 is located in the middle of the pot rinse branch pipe PTR2 and controls whether or not solvent is allowed to flow through the pot rinse branch pipe PTR2. Valve 82 is located in the middle of the back rinse branch pipe BR2 and the cup rinse branch pipe CR2 and controls whether or not solvent is allowed to flow through the back rinse branch pipe BR2 and the cup rinse branch pipe CR2. Valve 72 is located in the middle of the edge rinse branch pipe EBR2 and controls whether or not solvent is allowed to flow through the edge rinse branch pipe EBR2. Valve 62 is located in the middle of the pre-wet branch pipe PW2 and controls whether or not solvent is allowed to flow through the pre-wet branch pipe PW2.

[0102] Furthermore, the coater block 5 is equipped with the following pipes for supplying solvent to the resist chamber 43: a pot rinse branch pipe PTR3, a back rinse branch pipe BR3, a cup rinse branch pipe CR3, an edge rinse branch pipe EBR3, and a pre-wet branch pipe PW3.

[0103] The pot rinse branch pipe PTR3 is connected to regulator 52. Similarly, the back rinse branch pipe BR3 and the cup rinse branch pipe CR3 are connected to regulator 53. The edge rinse branch pipe EBR3 is connected to regulator 54. The pre-wet branch pipe PW3 is connected directly to the pressure sensor 51 without going through a regulator.

[0104] Valve 93 is located in the middle of the pot rinse branch pipe PTR3 and controls whether or not solvent is allowed to flow through the pot rinse branch pipe PTR3. Valve 83 is located in the middle of the back rinse branch pipe BR3 and the cup rinse branch pipe CR3 and controls whether or not solvent is allowed to flow through the back rinse branch pipe BR3 and the cup rinse branch pipe CR3. Valve 73 is located in the middle of the edge rinse branch pipe EBR3 and controls whether or not solvent is allowed to flow through the edge rinse branch pipe EBR3. Valve 63 is located in the middle of the pre-wet branch pipe PW3 and controls whether or not solvent is allowed to flow through the pre-wet branch pipe PW3.

[0105] Similarly, the coater block 5 is equipped with the following pipes for supplying solvent to the resist chamber 44: a pot rinse branch pipe PTR4, a back rinse branch pipe BR4, a cup rinse branch pipe CR4, an edge rinse branch pipe EBR4, and a pre-wet branch pipe PW4.

[0106] The pot rinse branch pipe PTR4 is connected to regulator 52. Similarly, the back rinse branch pipe BR4 and the cup rinse branch pipe CR4 are connected to regulator 53. The edge rinse branch pipe EBR4 is connected to regulator 54. The pre-wet branch pipe PW4 is connected directly to the pressure sensor 51 without going through a regulator.

[0107] Valve 94 is located in the middle of the pot rinse branch pipe PTR4 and controls whether or not solvent is allowed to flow through the pot rinse branch pipe PTR4. Valve 84 is located in the middle of the back rinse branch pipe BR4 and the cup rinse branch pipe CR4 and controls whether or not solvent is allowed to flow through the back rinse branch pipe BR4 and the cup rinse branch pipe CR4. Valve 74 is located in the middle of the edge rinse branch pipe EBR4 and controls whether or not solvent is allowed to flow through the edge rinse branch pipe EBR4. Valve 64 is located in the middle of the pre-wet branch pipe PW4 and controls whether or not solvent is allowed to flow through the pre-wet branch pipe PW4.

[0108] <15. Operation of the degassing device> From here on, the operation of the degassing device in this example will be explained with reference to the flowchart shown in Figure 8.

[0109] Step S11: Injection of solvent from the solvent supply source 50 into the first tank 11 in the first degassing device 6a begins. Figure 9 shows the flow of solvent in this step. In this step, the three-way valve 12 is switched to the solvent supply source 50 side, so the solvent from the solvent supply source 50 reaches the first tank 11 through the upstream piping 20c, the three-way valve 12, the inlet piping 19a and the inlet 105. At this time, the pump 15 is not operating and the valve 16 is closed, so the solvent in this step does not flow through the outlet piping 19b and the return piping 19c. That is, the solvent from the solvent supply source 50 is stored in the first tank 11.

[0110] Furthermore, in this step, the three-way valve 22 of the second degassing device 6b is switched to the return pipe 29c side, so no solvent flows from the solvent supply source 50 towards the second tank 21.

[0111] Step S12: When the storage of solvent in the first tank 11 is complete, the first degasser 6a enters degassing mode. In degassing mode, the three-way valve 12 is first switched to the return pipe 19c side. Then the pump 15 operates. Figure 10 shows the flow of solvent in this step. In this step, the solvent from the first tank 11 passes through the outlet 106, foamer 13, sensor 14, and pump 15, then through the branching point 19d and the return pipe 19c to the three-way valve 12, and from there through the inlet pipe 19a to the inlet 105 of the first tank 11. At this time, the valve 16 is closed.

[0112] The bubbles generated in the foaming device 13, mixed with the solvent, pass through the return pipe 19c and return to the first tank 11. Since the bubbles are lighter than the solvent, they accumulate at the top of the first tank 11 and form a gas phase.

[0113] The solvent stored in the first tank 11 is continuously degassed by repeatedly following the path shown in Figure 10. In other words, the first degassing device 6a in this example can appropriately adjust the degree of degassing by increasing or decreasing the number of times the solvent is degassed. Such adjustment can also be made in the second degassing device 6b, which has a similar configuration to the first degassing device 6a. The detection result of the sensor 14 can be used to determine whether degassing is sufficiently completed.

[0114] Step S13: Figure 11 shows the solvent flow in this step. Once the degassing of the solvent stored in the first tank 11 is complete, the first degasser 6a enters the liquid supply mode. In liquid supply mode, the three-way valve 12 is first closed. The closed three-way valve 12 does not allow the flow of solvent. Therefore, in this step, the solvent does not flow from the inlet 105 into the first tank 11. Then, the valve 16 opens. The solvent stored in the first tank 11 then passes through the foamer 13, sensor 14, pump 15, and branching point 19d to the valve 16, and further towards the first branching point TP1. Incidentally, it is desirable that the foamer 13 is fully open at this time.

[0115] In this step, if any of the closed valves 61, 62, 63, 64, 71, 72, 73, 74, 81, 82, 83, 84, or 91, 92, 93, 94 become open, the solvent that has reached the pressure sensor 51 passes through the piping corresponding to the opened valve and reaches the resist chamber.

[0116] Step S14: After the first degasser 6a enters liquid supply mode, the supply of solvent to the second tank 21 in the second degasser 6b begins. This operation is taken in anticipation of the first tank 11 in the first degasser 6a becoming empty. Figure 11 also shows the solvent flow in this step. In this step, the three-way valve 22 is switched to the solvent supply source 50 side, so the solvent from the solvent supply source 50 reaches the second tank 21 through the upstream piping 20c, the three-way valve 22, the inflow piping 29a and the inlet 205. At this time, the pump 25 is not operating and the valve 26 is closed, so the solvent in this step does not flow through the outflow piping 29b and the return piping 29c. That is, the solvent from the solvent supply source 50 is stored in the second tank 21.

[0117] Step S15: When the storage of solvent in the second tank 21 is complete, the second degasser 6b enters degassing mode. In degassing mode, first, the three-way valve 22 is switched to the return pipe 29c side. Then, the pump 25 is operated. Figure 12 shows the flow of solvent in this step. In this step, the solvent in the second tank 21 passes through the outlet 206, foamer 23, sensor 24, pump 25, then through the branching point 29d to the return pipe 29c to the three-way valve 22, and from there through the inlet pipe 29a to the inlet 205 of the second tank 21. At this time, the valve 26 is closed. In this way, degassing of the solvent by the second degasser 6b is performed.

[0118] Step S16: When the first tank 11 of the first degasser 6a, which was in liquid supply mode, becomes empty, the second degasser 6b enters liquid supply mode. In liquid supply mode, the three-way valve 22 first becomes closed. The closed three-way valve 22 does not allow the flow of solvent. Therefore, in this step, the solvent does not flow from the inlet 205 into the second tank 21. Then, the valve 26 becomes open. The solvent stored in the second tank 21 then passes through the foamer 23, sensor 24, pump 25, and branching point 29d to the valve 26, and further towards the first branching point TP1. Incidentally, it is desirable that the foamer 23 is fully open at this time. Figure 13 shows the flow of solvent in this step.

[0119] Step S17: When the second degassing device 6b enters liquid supply mode, the liquid is then injected into the first tank 11. Figure 13 shows the solvent flow in this step.

[0120] Step S18: When the liquid filling of the first tank 11 is complete, the first degasser 6a enters degassing mode. Figure 14 shows the solvent flow in this step. Once degassing of the first tank 11 is complete, the first degasser 6a is ready to enter liquid supply mode. In this way, the operation of the degassing chamber 6 in this example is complete.

[0121] <16. Switching Control Unit> The control unit 139 sets the first degasser 6a to liquid supply mode and the second degasser 6b to degassing mode, thereby supplying solvent to the resist chambers 41, 42, 43, and 44 through the first degasser 6a and performing degassing of the solvent through the second degasser 6b. Alternatively, the control unit 139 can also set the second degasser 6b to liquid supply mode and the first degasser 6a to degassing mode, thereby supplying solvent to the resist chambers 41, 42, 43, and 44 through the second degasser 6b and performing degassing of the solvent through the first degasser 6a. If the control unit 139 switches the liquid supply source between the first degasser 6a and the second degasser 6b while processing the substrate, the supply of solvent from the degasser chamber 6 will not be interrupted.

[0122] <17. Feedback control using pressure sensors> Next, the feedback control by the pressure sensor 51 will be explained with reference to Figure 2. When the first degassing device 6a or the second degassing device 6b is in liquid supply mode, the pressure sensor 51 measures the pressure applied to the solvent in the pre-wet branch pipes PW1, PW2, PW3, and PW4. If the measured pressure is less than the reference pressure, the pre-wetting process of the substrate may not be performed sufficiently due to insufficient solvent pressure. Therefore, the control unit 139 increases the output of pump 15 or pump 25 based on the detection result of the pressure sensor 51 so that the pressure applied to the solvent in the pre-wet branch pipes PW1, PW2, PW3, and PW4 becomes the reference pressure. Which pump is used for this feedback control is determined by which degassing device is in liquid supply mode.

[0123] Thus, by performing feedback control of the solvent pressure based on the pressure applied to the solvent in the pre-wet branch pipes PW1, PW2, PW3, and PW4, various processes using solvents can be reliably carried out. More solvent flows through the pre-wet branch pipes PW1, PW2, PW3, and PW4 compared to other pipes such as the pot rinse branch pipe PTR1. Therefore, the pressure applied to the solvent in the pre-wet branch pipes PW1, PW2, PW3, and PW4 is higher than the pressure applied to the solvent in other pipes. This pressure difference is realized by regulators 52, 53, and 54. Therefore, by adjusting the pressure of the solvent supply system based on the pre-wet branch pipes PW1, PW2, PW3, and PW4, the highest pressure among the various pipes can be reliably achieved.

[0124] In other words, according to the substrate processing system in this example, pressure fluctuations that occur in a configuration where the amount of solvent used increases and decreases due to multiple resist chambers are canceled out by feedback control, so that substrate processing can be performed while supplying solvent stably.

[0125] For example, as explained in Figure 15, when one of the four resist chambers 41, 42, 43, and 44 is circulating solvent through the pre-wet branch tube PW1, and the remaining three resist chambers 42, 43, and 44 are not using solvent because they are in the process of transferring the substrate W, the pressure sensor 51 is likely to detect a high pressure. This is because in current substrate processing systems, only a small amount of solvent is used.

[0126] On the other hand, as shown in Figure 16, when the resist chamber 41 is circulating solvent through the pre-wet branch tube PW1, and all of the remaining resist chambers 42, 43, and 44 are circulating solvent through the pot-rinse branch tubes PTR2, PTR3, and PTR4, the pressure sensor 51 is more likely to detect low pressure. This is because current substrate processing systems utilize a large amount of solvent.

[0127] In the substrate processing system of this example, as shown in Figure 16, feedback control of the pump 15 is performed based on the detection result of the pressure sensor 51, so that the detection result of the pressure sensor 51 is a constant value regardless of the state of the substrate processing system. Thus, according to the present invention, a constant pressure is applied to the pre-wet piping PW regardless of the operating status of the resist chambers 41, 42, 43, and 44. This is because the pressure sensor 51 is installed in the middle of the pre-wet piping PW. With this configuration, substrate processing using the nozzle 10 is performed under appropriate liquid pressure. This is because the nozzle 10 receives liquid from the pre-wet piping PW. A decrease in liquid pressure in the pre-wet piping PW would affect the substrate processing. However, according to this example, the pressure in the pre-wet piping PW is appropriate and constant in all cases, so such problems do not occur.

[0128] <18. Effects of the present invention> According to the above configuration, the system includes a pressure sensor 51 that detects the liquid pressure in the pre-wet piping PW, and a control unit 139 that controls the pump 15. The pre-wet piping PW has a high flow rate of processing liquid, while the second branch pipe, represented by the pot rinse piping PTR, has a low flow rate of processing liquid. The control unit 139 controls the output of the pump 15 so that the pressure sensor 51 detects a predetermined value. Even if the liquid pressure in the pre-wet piping PW decreases due to increased liquid flow in the pot rinse piping PTR, the output of the pump 15 is increased to compensate for this decrease. Since the pre-wet piping PW requires a large amount of liquid, a high pressure is always required inside the pre-wet piping PW. The above configuration satisfies these requirements, and the resist chamber 41 can perform substrate processing under appropriate conditions. With this configuration, substrate processing can be reliably performed.

[0129] According to the above configuration, the pre-wet piping PW is connected to the nozzle 10 that discharges the processing liquid onto the upper surface of the substrate inside the resist chamber 41. The above configuration allows for the supply of processing liquid at an appropriate pressure to the nozzle 10, which requires a large amount of processing liquid inside the resist chamber 41.

[0130] According to the above configuration, the second branch pipe is a back-rinse pipe BR for cleaning the back surface of the substrate in the resist chamber 41. As a result, the pressure applied to the nozzle provided in the pre-wet pipe PW does not change whether or not back-rinsing is performed. With this configuration, substrate processing can be reliably carried out.

[0131] According to the above configuration, the second branch pipe is a pot rinse pipe PTR for cleaning the nozzles of the resist chamber 41. As a result, the pressure applied to the nozzles provided in the pre-wet pipe PW does not change whether or not pot rinsing is performed. With this configuration, substrate processing can be reliably performed.

[0132] According to the above configuration, the second branch pipe is an edge rinse pipe (EBR) for cleaning the substrate periphery of the resist chamber 41. As a result, the pressure applied to the nozzle provided in the pre-wet pipe (PW) does not change whether or not edge rinsing is performed. With this configuration, substrate processing can be reliably carried out.

[0133] With the above configuration, the amount of liquid flowing through the second branch pipe can be controlled by regulators 52, 53, and 54, thereby reducing unnecessary consumption of liquid.

[0134] In substrate processing equipment equipped with multiple resist chambers 41, as in this example, liquid is often circulated simultaneously through the pre-wet piping PW and the second branch pipe. Specifically, for example, liquid processing of the substrate surface using a nozzle 10 is performed in the first resist chamber 41 while liquid processing is simultaneously performed in the second resist chamber 41, circulating liquid through the second branch pipe. According to the present invention, the pressure in the pre-wet piping PW tends to decrease. Even with a substrate processing equipment configured in this way, substrate processing can be performed without reducing the liquid pressure in the nozzle 10.

[0135] In a substrate processing apparatus 1, as in this example, where the first branch pipe, the pre-wet pipe PW, is located downstream of the second branch pipes, the pot rinse pipe PTR, back rinse pipe BR, cup rinse pipe CR, and edge rinse pipe EBR, the pressure in the pre-wet pipe tends to decrease due to the flow of liquid in the pot rinse pipe PTR, back rinse pipe BR, cup rinse pipe CR, and edge rinse pipe EBR. According to the present invention, the pressure in the pre-wet pipe PW can be reliably kept constant by feedback control, so such problems do not occur.

[0136] <19. Variation> The present invention is not limited to the above-described configuration and can be modified and implemented as follows.

[0137] <Example 1> In the embodiment, the degassing chamber 6 was equipped with two degassing devices, but the number of degassing devices can be increased or decreased depending on the application of the degassing chamber 6.

[0138] <Modification 2> The sensor 14 in the embodiment is not necessarily required for the present invention. If the conditions necessary for degassing are known in advance, those conditions can be reproduced during the degassing process. Therefore, according to this modified example, the degassing chamber 6 can be constructed without confirming the disappearance of bubbles using the sensor 14.

[0139] <Variation 3> The degassing chamber 6 of this example can also be constructed using a capacitive sensor to detect the water level of the first tank 11 instead of the sensor 14 in the embodiment. Figure 17 illustrates the configuration of the first tank 11 according to this modified example. The first tank 11 is attached to a liquid conduit 11a that extends vertically. The upper and lower ends of the liquid conduit 11a are in communication with the first tank 11. Therefore, the height of the liquid level P1 of the solvent stored in the first tank 11 coincides with the height of the liquid level P2 of the solvent guided into the liquid conduit 11a. The capacitive sensor 14a is located in the middle of the liquid conduit 11a and is configured to detect the presence or absence of the liquid level P2. As the degassing process of the solvent stored in the first tank 11 progresses, bubbles generated from the liquid accumulate in the first tank 11, causing the liquid level P1 of the first tank 11 to decrease. Since the liquid conduit 11a is connected to the first tank 11, the liquid level P2 in the liquid conduit 11a also decreases as the liquid level P1 decreases. When the liquid level P2 in the liquid conduit 11a decreases, the electrostatic capacitive sensor 14a detects this decrease in liquid level P2. The detection result of such an electrostatic capacitive sensor 14a can be used to determine the end point of the degassing mode in the first degassing device 6a. Alternatively, the electrostatic capacitive sensor 14a can be installed on the side of the first tank 11 to directly measure the liquid level P1. In this case, the liquid conduit 11a is not necessarily required.

[0140] <Modification 4> In the embodiment, the foamer 13 was equipped with a needle 133 for controlling the foaming state, but the present invention is not limited to this configuration. A foamer 13a without a needle 133 can also be constructed. Figure 18 shows an example of the configuration of this modified example. The foamer 13a of this modified example is equipped with a plurality of bases 131a, 131b, and the diameter of the passage through which the solvent passes in the central CT differs between each base 131a, 131b. For example, when the solvent is passed through base 131a, the solvent can be passed through a wide passage for degassing. Also, for example, when the solvent is passed through base 131b, the solvent can be passed through a narrow passage for degassing. Switching between the bases used for degassing is achieved by switching the open / closed state of a valve 135 attached to each base. The foamer control unit 134 is configured to control the opening and closing of the valve 135.

[0141] <Modification 5> Furthermore, as shown in Figure 18, a bypass passage 19y that does not go through the bases 131a and 131b may be provided. The bypass passage 19y is a flow path that short-circuits the solvent inlet and solvent outlet of the foamer 13 of the embodiment or the foamer 13a described above. By providing such a bypass passage 19y, the solvent can be quickly discharged into each resist chamber 41, 42, 43, and 44 in the liquid supply mode of the degassing device. In this case, the foamer 13 does not obstruct the flow of the solvent, so the load on the pump 15 in the liquid supply mode is minimized.

[0142] <Variation 6> In the embodiment, the needle 133 was not adjusted during the degassing mode, but the needle 133 may be operated during the degassing mode. For example, as the degassing of the solvent by the degassing mode progresses, the foamer 13, which was in a fully open state, may be gradually closed. By configuring it in this way, reliable degassing can be performed on solvents that have become difficult to foam as the degassing process progresses. Alternatively, for example, as the degassing of the solvent by the degassing mode progresses, the foamer 13, which was in a fully closed state, may be gradually opened. By configuring it in this way, the flow rate of the solvent passing through the foamer 13 can be increased over time, enabling efficient degassing.

[0143] In this modified example, the foaming control unit 134 controls the needle 133 to adjust the cross-sectional area of ​​the flow path in the central CT as the degassing process progresses.

[0144] <Example 7> In addition to the configuration of the embodiment, as shown in Figure 19, the first degassing device 6a may be configured to include a trap tank 11b for collecting bubbles downstream of the foamer 13. The trap tank 11b has an inlet 105a and an outlet 106a at its bottom, with the inlet 105a connected to the outflow pipe 19b and the outlet 106a connected to the return pipe 19c. The solvent containing bubbles passing through the outflow pipe 19b reaches the trap tank 11b through the inlet 105a. In the trap tank 11b, the solvent and bubbles are separated. The solvent from which the bubbles have been removed flows out of the trap tank 11b through the outlet 106a and returns to the first tank 11 through the return pipe 19c. With this configuration, bubbles in the solvent can be reliably removed. This modified example can also be applied to the second degassing device 6b.

[0145] <Differentiation Example 8> Although the base 131 in the embodiment was straight, the present invention is not limited to this configuration. The base 131 can also be elbow-shaped.

[0146] <Modification 9> In the embodiment, the cross-sectional shape of the central CT was tapered, but the present invention is not limited to this configuration, and a configuration having a flow path with a constant inner diameter of the central CT is also possible.

[0147] <Variation 10> In the configuration described above, the degassing device is provided in the coater block 5 and supplies liquid to the resist chambers 41, 42, 43, and 44. However, the present invention is not limited to this configuration. As shown in Figure 20, the degassing device can also be provided in the developer block 7. In this modified example, the degassing chamber 6 is located in the fourth row CL4 of the developer block 7, which has the developing chamber 77. In this modified example, the degassing chamber 6 supplies developing solution to the developing chamber 77.

[0148] Figure 21 illustrates the configuration of the degassing chamber 6 and how it is connected to the piping of the developing chambers 77a, 77b, 77c, and 77d. Thus, the developer block 7 is equipped with four developing chambers 77a, 77b, 77c, and 77d, which operate individually to simultaneously perform developing on up to four substrates W.

[0149] As shown in Figure 21, the configuration upstream of the merging pipe 20b is the same as that of the embodiment described in Figure 2, so a detailed explanation of this will be omitted.

[0150] In this modified example, a pressure sensor 701 is provided downstream of the merging pipe 20b. The pressure sensor 701 has the same configuration as the pressure sensor 51 in the embodiment and is configured to measure the pressure applied to the developing solution leading to the regulator 711. Downstream of the pressure sensor 701, in addition to the regulator 711, regulators 712, 713, and 714 are connected in parallel.

[0151] The regulator 711, etc., is installed in the middle of the piping and can control the pressure of the developing solution downstream. In this respect, it has the same configuration as the regulator 52, etc. in the embodiment.

[0152] The primary side of the regulator 711 is connected to the pressure sensor 701, while the secondary side is connected to the nozzle 10 of the developing chamber 77a. The developing solution that has passed through the regulator 711 is supplied to the nozzle 10 through the developing solution piping N1. The valve 721 is located on the secondary side of the regulator 711 and is installed in the middle of the developing solution piping N1. The valve 721 is a control valve that selects whether or not to discharge the developing solution from the nozzle 10.

[0153] The primary side of the regulator 712 is connected to the pressure sensor 701, while the secondary side is connected to the nozzle 10 of the developing chamber 77b. The developing solution that has passed through the regulator 712 is supplied to the nozzle 10 through the developing solution piping N2. The valve 722 is located on the secondary side of the regulator 712 and is installed in the middle of the developing solution piping N2. The valve 722 is a control valve that selects whether or not to discharge the developing solution from the nozzle 10.

[0154] The primary side of the regulator 713 is connected to the pressure sensor 701, while the secondary side is connected to the nozzle 10 of the developing chamber 77c. The developing solution that has passed through the regulator 713 is supplied to the nozzle 10 through the developing solution piping N3. The valve 723 is located on the secondary side of the regulator 713 and is installed in the middle of the developing solution piping N3. The valve 723 is a control valve that selects whether or not to discharge the developing solution from the nozzle 10.

[0155] The primary side of the regulator 714 is connected to the pressure sensor 701, while the secondary side is connected to the nozzle 10 of the developing chamber 77d. The developing solution that has passed through the regulator 714 is supplied to the nozzle 10 through the developing solution piping N4. The valve 724 is located on the secondary side of the regulator 714 and is installed in the middle of the developing solution piping N1. The valve 724 is a control valve that selects whether or not to discharge the developing solution from the nozzle 10.

[0156] This modified version ensures reliable degassing of the developer solution. Furthermore, since this modified version includes multiple degassing devices, one degassing device can be set to degassing mode while another degassing device is set to liquid supply mode, thus preventing interruption of the developer solution supply due to the degassing process. [Explanation of symbols]

[0157] 1. Substrate processing apparatus 1A enclosure 2. Exposure machine 3 Indexer Block 4 Load Ports 5 Courter Blocks 6. Degassing chamber 6a First degassing device 6b Second degassing device 7 Developer Blocks 8 Spin Chuck 9 Interface Blocks 10 nozzles 11 Tank No. 1 11a Liquid guide pipe 11b Trap tank 12 Three-way valve 13. Foaming device 13a Foaming machine 14 sensors 14a Capacitive Sensor 15 pumps 16 valves 17 valves 18 drains 19 Circulation piping 19a Inlet piping 19b Outlet piping 19c return piping 19d Branch point 19e Branch Point 19y Bypass Passage 20a Confluence 20b Junction piping 20c upstream piping 21 Tank No. 2 22 Three-way valve 23. Foaming machine 24 sensors 25 pumps 26 valves 27 valves 28 Drain 29a Inflow pipe 29b Outlet piping 29c return piping 29d Branch point 34 Pass 36 Hand 41 Resist Chamber 42 Resist Chamber 43 Resist Chamber 44 Resist Chambers 45 Burk Chamber 50 Solvent supply sources 51 Pressure Sensor 52 Regulator 53 Regulator 54 Regulator 55 Heat treatment chamber 55a Hot Plate 55b Post-heating treatment plate 56 Hand 57 Pass 58 Cooling section 58a Cooling treatment plate 61 valves 62 valves 63 valves 64 valves 71 Valves 72 valves 73 Valves 74 valves 75 Heat treatment chamber 75a Hot Plate 75b Post-heating treatment plate 76 Hand 77 Developing Chamber 77a Developing Chamber 77b Developing Chamber 77c Developing Chamber 77d Developing Chamber 78 Cooling section 78a Cooling treatment plate 79 Pass 81 Valves 82 valves 83 Valves 84 valves 91 Valve 92 valves 93 Valves 94 valves 95 Pass 101 Joint 102 Fittings 105 Inlet 105a Inlet 106 Outlet 106a Outlet 107 Exhaust vent 131 Base 131a Base 131b Base 132 Motor 133 Needles 134 Foaming Machine Control Unit 135 valve 136 valves 139 Control Unit 205 Inlet 206 Outlet 207 Exhaust vent 701 Pressure Sensor 711 Regulator 712 Regulator 713 Regulator 714 Regulator 961 Hand 962 Hand B bubbles B1 1st branch B2 2nd branch B3 Third branch B4 4th branch BR Back rinse piping BR1 Back rinse branch pipe BR2 Back rinse branch tube BR3 Back rinse branch pipe BR4 Back rinse branch pipe C Career C1 First Center Robot C2 Second Center Robot CH1 First Transfer Section CH2 Second Transfer Section CL1 First Column CL2 Second Column CL3 Third Column CL4 Fourth Column CL5 Fifth Column CL6 Sixth Column CR Coupling Pipe CR1 Coupling Branch Pipe CR2 Coupling Branch Pipe CR3 Coupling Branch Pipe CR4 Coupling Branch Pipe CT Central Part EBR Edge Rinse Pipe EBR1 Edge Rinse Branch Pipe EBR2 Edge Rinse Branch Pipe EBR3 Edge Rinse Branch Pipe EBR4 Edge Rinse Branch Pipe IR Indexer Robot N1 Developer Pipe N2 Developer Pipe N3 Developer Pipe N4 Developer Pipe P1 Liquid Level P2 Liquid Level PTR Pot Rinse Pipe PTR1 Pot Rinse Branch Pipe PTR2 Pot Rinse Branch Pipe PTR3 Pot Rinse Branch Pipe PTR4 Pot Rinse Branch Pipe[[ID=s63]] PW Pre-Wet Pipe PW1 Pre-Wet Branch Pipe PW2 Pre-Wet Branch Pipe PW3 Pre-Wet Branch Pipe PW4 Pre-Wet Branch Pipe R1 First Robot R2 Second Robot TP1 First Branch Point TP2 Second Branch Point TP3 Third Branch Point TP4 Fourth Branch Point W Substrate

Claims

1. A chamber for applying liquid treatment to a substrate in a horizontal position, A tank for storing the processed liquid, A main pipe for circulating the processing liquid from the aforementioned tank, A pump is provided in the main pipe for discharging the processing liquid, Downstream of the pump, the main pipe branches off, and multiple branch pipes are formed to supply processing liquid to multiple types of processing units within the chamber. The system comprises a control unit for controlling the pump, The aforementioned plurality of branch pipes include a first branch pipe with the highest flow rate of the processing liquid and a second branch pipe with a flow rate of the processing liquid less than that of the first branch pipe. A pressure gauge for detecting the pressure of the processing liquid is provided in the first branch pipe among the plurality of branch pipes. The control unit controls the pump output so that the pressure gauge detects a predetermined value. A substrate processing apparatus characterized by the following:

2. In the substrate processing apparatus according to claim 1, The first branch pipe is connected to a nozzle that discharges processing liquid onto the upper surface of the substrate inside the chamber. A substrate processing apparatus characterized by the following:

3. In the substrate processing apparatus according to claim 1, The second branch pipe is a back-rinse pipe for cleaning the back surface of the substrate in the chamber. A substrate processing apparatus characterized by the following:

4. In the substrate processing apparatus according to claim 1, The second branch pipe is a pot rinse pipe for cleaning the nozzle of the chamber. A substrate processing apparatus characterized by the following:

5. In the substrate processing apparatus according to claim 1, The second branch pipe is an edge rinsing pipe for cleaning the substrate periphery of the chamber. A substrate processing apparatus characterized by the following:

6. In the substrate processing apparatus according to claim 1, The second branch pipe is equipped with a regulator for reducing the liquid pressure. A substrate processing apparatus characterized by the following:

7. In the substrate processing apparatus according to claim 1, Equipped with multiple chambers A substrate processing apparatus characterized by the following:

8. In the substrate processing apparatus according to claim 1, The first branch pipe is located downstream of the second branch pipe. A substrate processing apparatus characterized by the following:

9. A control method for a substrate processing apparatus comprising: a chamber for liquid processing while rotating a substrate in a horizontal position; a tank for retaining the liquid; a main pipe for circulating the liquid from the tank to the chamber; a pump provided in the main pipe for discharging the liquid; a first branch pipe and a second branch pipe, which branch downstream of the pump and are connected to the chamber; and a pressure gauge provided in the first branch pipe for detecting the liquid pressure, wherein The pump is feedback controlled based on the detected liquid pressure. A control method characterized by the following:

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