Processing liquid preparation apparatus, substrate processing apparatus, and processing liquid preparation method

Abstract

The present invention provides a processing solution preparation apparatus, a substrate processing apparatus, and a processing solution preparation method that can quickly obtain a phosphoric acid solution at a desired temperature in which silica is dissolved. [Solution] In the substrate processing apparatus SS, the control unit of the processing liquid adjustment device 1 connected to the substrate processing apparatus 100 has a new liquid supply control unit 24 that causes the processing liquid supply unit J to supply processing liquid PL into the adjustment tank T2, a silica supply control unit 25 that causes the silica supply unit K to supply silica to the processing liquid PL in the adjustment tank T2, a heating control unit 26 that causes the heater H2 to bring the processing liquid PL in the adjustment tank T2 to a first temperature, a temperature maintenance control unit 27 that causes the heater H2 to maintain the processing liquid PL in the adjustment tank T2 supplied with silica at a first temperature, and a cooling unit D that, after the temperature maintenance control unit 27 maintains the first temperature, cools the temperature of the processing liquid PL in the adjustment tank T2 to a second temperature lower than the first temperature.

Description

Technical Field

[0001] Embodiments of the present invention relate to a processing liquid adjusting device, a substrate processing device, and a processing liquid adjusting method.

Background Art

[0002] In a manufacturing process for manufacturing semiconductors, flat panel displays, etc., etching is performed by supplying a processing liquid for etching to a film formed on a processed surface of a substrate such as a semiconductor wafer or a glass substrate, and a processing device for forming a desired circuit pattern is used.

[0003] There is a processing device that selectively etches a nitride film by supplying a phosphoric acid solution as a processing liquid to a substrate such as a semiconductor wafer on which a nitride film and an oxide film are formed. In such a processing device, the etching rate is adjusted by heating the phosphoric acid solution supplied to the substrate in advance.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In such processing devices, it is sometimes necessary to perform etching at a low etching rate by supplying a phosphoric acid solution heated to a relatively low temperature to the substrate. Furthermore, since a higher silica (SiO2) concentration in the phosphoric acid solution increases the selectivity of the film removed by etching, silica may be supplied and dissolved in the phosphoric acid solution. However, the saturation dissolution concentration of silica increases with increasing temperature of the phosphoric acid solution. Therefore, it is not possible to quickly dissolve silica in a relatively low-temperature phosphoric acid solution, and it takes a long time to prepare a phosphoric acid solution at the desired temperature with dissolved silica.

[0006] The embodiments of the present invention aim to provide a processing solution preparation apparatus, a substrate processing apparatus, and a processing solution preparation method that can obtain a phosphoric acid solution in which silica is dissolved at a desired temperature in a short time. [Means for solving the problem]

[0007] An embodiment of the present invention is a processing liquid adjustment device that adjusts the processing liquid supplied to a processing device that processes a substrate with a phosphoric acid solution, which is the processing liquid, and comprises: an adjustment tank for storing the processing liquid; a processing liquid supply unit for supplying the processing liquid into the adjustment tank; a heating unit for heating the processing liquid; a silica supply unit for supplying silica to the processing liquid in the adjustment tank; a cooling unit for lowering the temperature of the processing liquid in the adjustment tank; and a control unit for controlling the heating unit, the silica supply unit, the processing liquid supply unit, and the cooling unit, wherein the control unit controls the processing liquid supply unit, and the adjustment The apparatus includes a new liquid supply control unit that supplies the processing liquid into the adjustment tank, a silica supply control unit that supplies the silica to the processing liquid in the adjustment tank, a heating control unit that brings the processing liquid in the adjustment tank to a first temperature, a temperature maintenance control unit that maintains the processing liquid in the adjustment tank, to which the silica has been supplied, at the first temperature, and a cooling control unit that, after the temperature maintenance control unit has maintained the first temperature, cools the processing liquid in the adjustment tank to a second temperature lower than the first temperature.

[0008] The substrate processing apparatus according to an embodiment of the present invention comprises the processing apparatus and the processing liquid preparation apparatus.

[0009] An embodiment of the present invention provides a method for preparing a processing solution, which is supplied to a processing apparatus that processes a substrate with a phosphoric acid solution, and includes: a processing solution supply step of supplying the processing solution into a preparation tank; a heating step of heating the processing solution in the preparation tank to a first temperature; a silica supply step of supplying silica to the processing solution in the preparation tank; a temperature maintenance step of maintaining the processing solution in the preparation tank, to which the silica has been supplied, at the first temperature; and a cooling step of a cooling unit, after the temperature maintenance step, lowering the temperature of the processing solution in the preparation tank to a second temperature lower than the first temperature. [Effects of the Invention]

[0010] According to embodiments of the present invention, a phosphoric acid solution in which silica is dissolved can be obtained at a desired temperature in a short time. [Brief explanation of the drawing]

[0011] [Figure 1] This is a simplified configuration diagram showing the processing apparatus and processing liquid preparation apparatus of the first embodiment. [Figure 2] This is a flowchart showing the processing solution preparation procedure in the processing solution preparation device of the first embodiment. [Figure 3] This is a simplified configuration diagram showing the processing apparatus and processing liquid preparation apparatus of the second embodiment. [Figure 4] This is a flowchart showing the processing solution preparation procedure in the processing solution preparation device of the second embodiment. [Figure 5] This is a simplified configuration diagram showing modified examples of the processing apparatus and the processing liquid preparation apparatus. [Modes for carrying out the invention]

[0012] Hereinafter, embodiments of the present invention will be described with reference to the drawings. [First Embodiment] First, the first embodiment will be described. [overview] As shown in Figure 1, the processing solution preparation device 1 of this embodiment is a device that prepares the processing solution PL supplied to the processing device 100 that processes the substrate W. The processing solution preparation device 1 can also be considered as a processing solution supply device that supplies the processing solution PL to the processing device 100. The processing solution preparation device 1 dissolves silica (SiO2) in the processing solution PL and brings it to a target temperature. In this embodiment, when dissolving silica, the processing solution PL is set to a relatively high first temperature, and when supplying the processing solution PL, it is set to a relatively low second temperature. In the following description, the device that processes the substrate W by supplying the processing solution PL from the processing solution preparation device 1 to the processing device 100 will be referred to as the substrate processing device SS.

[0013] [Processing device] The processing apparatus 100 is a single-wafer etching apparatus that removes unwanted films and leaves circuit patterns by supplying a processing solution PL to a rotating substrate W, for example. In this embodiment, an aqueous solution containing phosphoric acid (H3PO4) (hereinafter referred to as phosphoric acid solution) is used as the processing solution PL. The phosphoric acid solution needs to be heated to a high temperature to ensure a processing rate, and generally, the phosphoric acid solution is used at, for example, around 160°C. However, this embodiment applies when the solution is used at a lower temperature, for example, around 140°C.

[0014] Furthermore, when etching a semiconductor wafer substrate W, supplying a silica solution to a phosphoric acid solution and dissolving the silica can increase the selectivity for etching specific materials. For example, if you want to remove the silicon nitride film (SiN) but leave the silicon oxide film (SiO2) intact, you can use a phosphoric acid solution in which silica has been dissolved.

[0015] The processing apparatus 100 is a single wafer type apparatus that processes the substrate W one by one with the processing liquid PL. The processing apparatus 100 includes a rotating unit 101, a supply unit 102, and a recovery unit 103 configured in a chamber 100a which is a container. The rotating unit 101 includes a rotating body 101a and a drive source 101c. The rotating body 101a is a rotating table that holds the peripheral edge of the substrate W by a holding part 101b such as a chuck pin and rotates about an axis orthogonal to the processing surface of the substrate W. The drive source 101c is a motor that rotates the rotating body 101a.

[0016] The supply unit 102 includes a nozzle 102a and an arm 102b. The nozzle 102a is a discharge part that discharges the processing liquid PL toward the processing surface of the rotating substrate W. The arm 102b is provided with the nozzle 102a at its tip and swings the nozzle 102a between a position above the center of the rotating body 101a and a position where it retreats from above the rotating body 101a. The nozzle 102a is connected to the processing liquid adjusting device 1 via a supply pipe S1 described later, and the processing liquid PL is supplied from the processing liquid adjusting device 1.

[0017] The recovery unit 103 is a housing provided so as to surround the rotating body 101a, and recovers the processing liquid PL that has been supplied from the nozzle 102a to the processing surface of the substrate W and leaked from the end face of the substrate W from its bottom. Openings are provided at the bottom of the recovery unit 103 and the bottom of the chamber 100a, and these openings are connected to the recovery path of the processing liquid PL via a recovery pipe C.

[0018] [Processing Liquid Adjusting Device] The processing liquid adjusting device 1 adjusts the processing liquid PL supplied to the processing apparatus 100. The processing liquid adjusting device 1 can also be regarded as a processing liquid supply device that supplies the processing liquid PL to the processing apparatus 100. Although not shown in FIG. 1, a plurality of processing apparatuses 100 are provided for one processing liquid adjusting device 1.

[0019] The processing liquid adjustment device 1 includes a tank T, a supply path S, a heating unit H, and a control unit E. The tank T stores the processing liquid PL. The tank T includes a plurality of tanks, for example, a supply tank T1 and an adjustment tank T2. Hereinafter, when these T1 and T2 are not distinguished, they will be described as the tank T.

[0020] The supply path S connects the plurality of tanks T1 and T2 so that the processing liquid PL can flow between the plurality of tanks T1 and T2, and supplies the processing liquid PL to the processing device 100 by sequentially passing through the plurality of tanks T1 and T2. The supply path S includes a supply pipe S1 and a liquid feed pipe S2. The heating unit H heats the processing liquid PL. The heating unit H includes heaters H1 and H2.

[0021] (Supply tank) The supply tank T1 has a container 10a and stores the processing liquid PL to be supplied to the processing device 100 in the container 10a. The container 10a is made of a material having corrosion resistance against the processing liquid PL. A supply pipe S1 and a return pipe R1 are connected to the supply tank T1. The supply pipe S1 is connected to the bottom of the container 10a and is a pipe for supplying the processing liquid PL to the supply unit 102 of the processing device 100.

[0022] A pump P1, a heater H1, a filter F, and a valve V1a are provided on the path of the supply pipe S1. The pump P1 sucks and sends out the processing liquid PL from the bottom of the supply tank T1. The heater H1 is provided on the downstream side of the pump P1 and heats the processing liquid PL sent out from the pump P1 to a preset target temperature.

[0023] Here, the upstream side on the supply tank T1 side and the downstream side on the processing device 100 side are defined in the flow from the supply tank T1 to the processing device 100. A temperature sensor (not shown) is provided on the downstream side of the heater H1, and the output of the heater H1 is adjusted based on the temperature of the processing liquid PL measured by the temperature sensor. The temperature sensor is, for example, a thermistor. The processing liquid PL heated to the target temperature by the heater H1 is supplied to the supply unit 102 of the processing device 100.

[0024] Filter F is located downstream of heater H1 and removes impurities from the processing liquid PL flowing through supply pipe S1. Valve V1a is located downstream of filter F and switches the supply of processing liquid PL to the processing device 100.

[0025] The return pipe R1 branches off upstream of valve V1a in the supply pipe S1 and is connected to the supply tank T1. Valve V1b is provided in the return pipe R1. When it is not necessary to supply the processing liquid PL to the substrate W, valve V1a closes and valve V1b opens, returning the processing liquid PL flowing through the supply pipe S1 to the supply tank T1 via the return pipe R1. In other words, a circulation path is formed by the return pipe R1 and the supply pipe S1. In this circulation path, the temperature of the processing liquid PL in the supply tank T1 is maintained at a target temperature by heating with heater H1. In this embodiment, the temperature of the processing liquid PL in the supply tank T1 is maintained at 140°C.

[0026] Although not shown in the diagram, the supply tank T1 is also equipped with a liquid level sensor to detect the liquid level. This allows detection of whether the amount of processing liquid PL in the supply tank T1 has fallen below a certain level. A heater for heating the processing liquid PL to a target temperature may also be installed inside the container 10a of the supply tank T1.

[0027] Furthermore, a pipe equipped with a valve Vz is connected to the bottom of the supply tank T1, and it merges with a common pipe called the discharge channel Z. The discharge channel Z is connected to the factory's wastewater route.

[0028] (Adjustment tank) The adjustment tank T2 has a container 40a, which stores the newly prepared treatment liquid PL. The container 40a is made of a material that is corrosion-resistant to the treatment liquid PL. The adjustment tank T2 is connected to a new liquid piping R2, an additive piping R3, and a liquid supply piping S2.

[0029] The new liquid piping R2 is a pipe that supplies the processed liquid PL (not shown) from a source of processed liquid PL to the adjustment tank T2. The temperature of the processed liquid PL supplied from the new liquid piping R2 is below the second temperature, and in this embodiment, it is room temperature. The new liquid piping R2 is equipped with a flow meter FM for measuring the flow rate of the supplied processed liquid PL. The new liquid piping R2 constitutes the processed liquid supply section J that supplies the processed liquid PL to the adjustment tank T2. In the following description, the processed liquid PL supplied to the adjustment tank T2 by the processed liquid supply section J will be referred to as the new liquid. The processed liquid supply section J also constitutes a cooling section D that lowers the temperature of the processed liquid PL in the adjustment tank T2.

[0030] The additive piping R3 is a pipe that supplies silica liquid from a silica liquid supply source (not shown) to the adjustment tank T2. The additive piping R3 constitutes the silica supply section K that supplies silica to the adjustment tank T2. In this embodiment, the silica supply section K supplies silica as silica liquid, which is water containing silica particles. By dissolving the silica contained in this silica liquid in the processing liquid PL (phosphoric acid solution), the selectivity ratio for etching the silicon nitride film can be increased. The additive piping R3 is equipped with a flow meter SM for measuring the flow rate of the supplied silica liquid.

[0031] The liquid transfer pipe S2 transfers the processed liquid PL from the adjustment tank T2 to the supply tank T1. The liquid transfer pipe S2 is connected to the bottom of the container 40a. The liquid transfer pipe S2 is equipped with a pump P2 and a heater H2. Pump P2 sucks the processed liquid PL from the bottom of the adjustment tank T2 and sends it out. Heater H2 is located downstream of pump P2 and is a heating unit that heats the processed liquid PL sent out from pump P2 to a preset target temperature. Here, the bottom side of the adjustment tank T2 is considered upstream and the opposite side is considered downstream in the flow from the bottom of the adjustment tank T2 to the supply tank T1 and then to the top (return) of the adjustment tank T2.

[0032] The liquid supply piping S2 branches into a supply route that delivers liquid to the supply tank T1 and a route that returns to the adjustment tank T2. Valve V2a is provided in the supply route to the supply tank T1. Valve V2a switches whether or not the processed liquid PL is delivered to the supply tank T1. Valve V2b is provided in the route that returns to the adjustment tank T2. Valve V2b switches whether or not the processed liquid PL returns to the adjustment tank T2.

[0033] When valve V2a closes and valve V2b opens, the processing liquid PL heated by heater H2 is returned to the adjustment tank T2, thus circulating. In this way, heater H2 heats the processing liquid PL in adjustment tank T2 to the target temperature. In this embodiment, as will be described later, silica is dissolved by supplying silica liquid from additive piping R3 while heating the processing liquid PL in adjustment tank T2 to the target temperature, which is the first temperature. In this embodiment, the first temperature is 162°C. Then, by supplying room temperature processing liquid PL to adjustment tank T2 from new liquid piping R2, the temperature of the processing liquid PL is lowered to the target temperature, which is the second temperature. Furthermore, the processing liquid PL that has been lowered to the second temperature is heated by heater H2 and maintained at the second temperature. In this embodiment, the second temperature is 147°C.

[0034] The second temperature should be less than the first temperature and above the temperature at which the substrate W is processed. From the viewpoint of reducing the temperature of the processing liquid PL, a smaller difference between the first and second temperatures is preferable. On the other hand, the supply tank T1 that stores the processing liquid PL supplied to the processing apparatus 100 is supplied with the processing liquid PL at the second temperature in the adjustment tank T2. Therefore, it is preferable that the second temperature is close to the temperature at which the substrate W is processed so that the temperature fluctuation of the processing liquid PL in the supply tank T1 is small. Taking these factors into consideration, in this embodiment, the second temperature is set to 147°C, which is less than the first temperature and above the temperature at which the substrate W is processed.

[0035] When the temperature drops and the processing liquid PL in the adjustment tank T2 reaches a second temperature, and the processing liquid PL in the supply tank T1 falls below a certain amount, valve V2b is closed and valve V2a is opened, and a predetermined fixed amount of liquid is sent to the supply tank T1. This replenishes the processing liquid PL supplied to the treatment device 100 and used for processing. After replenishing the processing liquid PL in the supply tank T1, the adjustment tank T2 is supplied with the same amount of new liquid from the new liquid piping R2, and the next heating is performed.

[0036] A temperature sensor TS is installed inside the adjustment tank T2 to measure the temperature of the processing liquid PL. Based on the temperature of the processing liquid PL measured by the temperature sensor TS, the output of the heater H2 is adjusted. It is also possible to determine whether or not the processing liquid PL in the adjustment tank T2 has reached the target temperature. The temperature sensor TS is, for example, a thermistor.

[0037] Although not shown in the diagram, the adjustment tank T2 is equipped with a liquid level sensor to detect the liquid level. This allows detection of whether the amount of processed liquid PL in the adjustment tank T2 has fallen below a certain level, and enables a determination of whether or not to supply processed liquid PL from the new liquid piping R2. A heater for heating the processed liquid PL to a target temperature may also be installed in the adjustment tank T2. In other words, the heating unit H is not limited to being located in the circulation path.

[0038] (Control Unit) The control unit E controls each part of the substrate processing apparatus SS. The control unit E includes a processor for executing programs to realize various functions of the substrate processing apparatus SS, a memory for storing various information such as programs and operating conditions, and drive circuits for driving each element. The control unit E also includes an input device for receiving information and a display device for displaying information.

[0039] Control unit E includes a substrate processing control unit 21, a processing liquid supply control unit 22, a processing liquid replenishment control unit 23, a new liquid supply control unit 24, a silica supply control unit 25, a heating control unit 26, a temperature maintenance control unit 27, a cooling control unit 28, and a storage unit 29.

[0040] The substrate processing control unit 21 controls the processing apparatus 100 and the processing liquid preparation device 1 to perform the processing of the substrate W. Specifically, the substrate processing control unit 21 controls the loading and unloading of the substrate W into the chamber 100a, the holding unit 101b holding the substrate W, the rotation of the rotating body 101a by the drive source 101c, and the swinging of the nozzle 102a by the arm 102b.

[0041] The processing liquid supply control unit 22 controls whether or not to supply processing liquid PL to the processing device 100. In other words, the processing liquid supply control unit 22 switches the supply and cessation of processing liquid PL by switching the opening and closing of valves V1a and V1b. The processing liquid replenishment control unit 23 controls whether or not to replenish processing liquid PL from the adjustment tank T2 to the supply tank T1. In other words, the processing liquid replenishment control unit 23 switches the supply and cessation of processing liquid PL from the adjustment tank T2 to the supply tank T1 by switching the opening and closing of valves V2a and V2b. The new liquid supply control unit 24 causes the processing liquid supply unit J to supply new processing liquid PL into the adjustment tank T2. From the time the supply of processing liquid PL to the adjustment tank T2 begins, the new liquid supply control unit 24 terminates the supply of new liquid by the processing liquid supply unit J when the cumulative value of the flow rate measured by the flow meter FM reaches a predetermined value.

[0042] The silica supply control unit 25 instructs the silica supply unit K to supply silica to the processing liquid PL in the adjustment tank T2. The silica supply control unit 25 instructs the silica supply unit K to supply an amount of silica that is less than the silica saturation dissolution concentration corresponding to the temperature of the processing liquid PL supplied to the processing device 100. The silica supply control unit 25 terminates the supply of silica by the silica supply unit K when the cumulative flow rate from the time the supply of silica to the adjustment tank T2 started, as measured by the flow meter SM, reaches a predetermined value. The heating control unit 26 instructs the heater H2 to heat the processing liquid PL in the adjustment tank T2 to a first temperature. For example, the heating control unit 26 instructs the heater H2 to heat the processing liquid PL in the adjustment tank T2 until the temperature measured by the temperature sensor TS reaches the first temperature.

[0043] The temperature maintenance control unit 27 instructs the heater H2 to maintain the processing liquid PL in the adjustment tank T2, to which silica has been supplied, at a first temperature. This maintenance of the first temperature is performed for a preset time until the silica dissolves in the processing liquid PL. The temperature maintenance control unit 27 also instructs the heater H2 to maintain the processing liquid PL in the adjustment tank T2, to which silica has dissolved, at a second temperature. This maintenance of the second temperature is performed from the time the temperature of the processing liquid PL in the adjustment tank T2 is lowered to the second temperature until the temperature of the processing liquid PL in the adjustment tank T2 is heated to the first temperature.

[0044] The temperature reduction control unit 28 instructs the temperature reduction unit D to lower the temperature of the processing liquid PL in the adjustment tank T2 to a second temperature lower than the first temperature, after the temperature maintenance control unit 27 has maintained the first temperature. In this embodiment, the temperature reduction control unit 28 lowers the temperature of the processing liquid PL by having the processing liquid supply unit J, which is the temperature reduction unit D, supply processing liquid PL to the adjustment tank T2 at or below the second temperature. For example, when the cumulative value of the flow rate of the processing liquid PL measured by the flow meter FM reaches the cumulative value of the flow rate at which the processing liquid PL in the adjustment tank T2 is cooled to the second temperature, the temperature reduction control unit 28 terminates the supply of processing liquid PL by the processing liquid supply unit J. The flow rate of room temperature processing liquid PL that cools the processing liquid PL in the adjustment tank T2 to the second temperature is determined based on the first temperature, the difference between the first and second temperatures, and the amount of processing liquid PL in the adjustment tank T2 that is maintained at the first temperature.

[0045] The storage unit 29 is configured as a memory and stores the first temperature and second temperature as target temperatures, the set time, etc. The operator can input the desired values ​​for the first temperature, second temperature, and set time using an input device.

[0046] [Operation] The operation of the substrate processing apparatus SS of this embodiment, as described above, will be explained with reference to the flowchart in Figure 2 in addition to Figure 1. Note that a substrate processing method for processing the substrate W according to the following procedure, a processing liquid supply method for supplying the processing liquid PL, and a processing liquid adjustment method for adjusting the processing liquid PL are also aspects of this embodiment.

[0047] (Substrate processing) First, the substrate processing by the processing device 100 will be explained. The substrate W to be processed is brought onto the rotating body 101a by a transport robot and held by the holding unit 101b. The substrate W rotates as the drive source 101c rotates the rotating body 101a. The processing liquid PL, which has been adjusted by the processing liquid adjustment device 1, is supplied to the surface of the substrate W to be processed from the nozzle 102a when the valve V1a opens, thereby performing the etching process.

[0048] After a predetermined processing time has elapsed, valve V1a closes and the supply of processing liquid PL stops. Subsequently, the substrate W stops rotating, and the substrate W, now released from the holding part 101b, is transported out of chamber 100a by the transport robot.

[0049] (Preparation of the treatment solution) Next, the adjustment process for the processing liquid PL in the processing liquid adjustment device 1 will be explained. Before being supplied to the processing device 100, the processing liquid PL in the supply tank T1 is heated by the heater H1 while circulating through the supply pipe S1, return pipe R1, and supply tank T1 with valve V1a closed and valve V1b open, thereby maintaining it at the target temperature. Then, as described above, at the timing of processing in the processing device 100, valve V1b is closed and valve V1a is opened, so the processing liquid PL from the supply tank T1 is supplied to the processing device 100.

[0050] The procedure for heating the processing liquid PL in the adjustment tank T2 to dissolve silica and then cooling it down will be explained below according to the flowchart in Figure 2. As will be described later, the processing liquid PL in the adjustment tank T2 is heated by heater H2 while circulating through the liquid supply pipe S2 and adjustment tank T2 with valve V2a closed and valve V2b open, thereby maintaining a second temperature. Also, as will be described later, silica is dissolved. Then, by supplying the processing liquid PL to the processing device 100, when the liquid volume in the supply tank T1 falls below a certain amount, valve V2a is opened and valve V2b is closed, so that the processing liquid PL from the adjustment tank T2 is supplied to the supply tank T1 (step S100).

[0051] Thus, when the processing liquid PL in the adjustment tank T2 is supplied to the supply tank T1, valve V2a is closed and valve V2b is opened. Then, room temperature processing liquid PL is supplied from the new liquid piping R2, and the processing liquid PL is replenished in the adjustment tank T2 (processing liquid supply process: step S101). At this time, a portion of the total amount of processing liquid PL that needs to be replenished, that is, a portion of the total replenishment amount, is supplied, and the remainder is used in the cooling process. For example, if the total replenishment amount is 7.5L, a portion of it, 3L, is supplied. This control of the supply amount is performed based on the integrated value of the flow rate from the time the supply of processing liquid PL to the adjustment tank T2 started, as measured by the flow meter FM. Here, room temperature refers to the temperature of the processing liquid PL at a constant temperature in the atmosphere in which the substrate processing apparatus SS according to this embodiment is installed (in the following embodiments, room temperature is defined as a range of 20 degrees Celsius ± 10 degrees Celsius).

[0052] With valve V2a closed and valve V2b open, heater H2 heats the processing liquid PL circulating through the liquid supply pipe S2 and adjustment tank T2 (heating step: step S102). This raises the temperature of the processing liquid PL, as measured by the temperature sensor TS, to a first temperature (NO in step S103). For example, it is raised to 162°C, which is set as the first temperature.

[0053] Once the temperature of the processing liquid PL has been heated to the first temperature (YES in step S103), silica liquid is supplied to the processing liquid PL in the adjustment tank T2 from the additive pipe R (silica supply step: step S104). The amount of silica liquid supplied at this time is set to a predetermined amount relative to the total replenishment amount of the processing liquid PL. For example, the amount supplied is such that silica does not precipitate at the temperature of the processing liquid PL supplied to the treatment device 100. In other words, it is set to an amount that is less than the silica saturation dissolution concentration corresponding to the temperature of the processing liquid PL supplied to the treatment device 100. This control of the supply amount is performed based on the integrated flow rate from the time the supply of silica to the adjustment tank T2 started, as measured by the flow meter SM. The heater H2 continues heating so that the first temperature is maintained for the set time until the silica supplied as silica liquid dissolves (temperature maintenance step: NO in step S105).

[0054] When the set time has elapsed (YES in step S105), room temperature processing liquid PL is supplied to the adjustment tank T2 from the new liquid piping R2 (cooling process: step S106). At this time, a portion of the remaining total amount of processing liquid PL that needs to be replenished is supplied. For example, if 3L was supplied in step S101, 4.5L will be supplied. This supply amount is controlled based on the integrated value of the flow meter FM. The amount of room temperature processing liquid PL supplied is pre-set to be such that, when supplied to the processing liquid PL in the adjustment tank T2, the temperature of the processing liquid PL cools down to a second temperature. Therefore, when room temperature processing liquid PL is supplied to the adjustment tank T2, the temperature of the processing liquid PL cools down to the second temperature. Note that the temperature of the supplied processing liquid PL does not have to be room temperature, as long as it is below the second temperature, it is sufficient to cool the processing liquid PL, which has been heated for silica dissolution, down to a second temperature which is close to the temperature at which the substrate W is processed. In this case, the amount of processing liquid PL supplied to the processing liquid PL in the adjustment tank T2 during the cooling process is predetermined so that the temperature of the processing liquid PL is reduced to a second temperature.

[0055] Then, from the time the temperature of the processing liquid PL in the adjustment tank T2 cools down to the second temperature until it is sent to the supply tank T1, the heater H2 maintains the temperature of the circulating processing liquid PL at the second temperature as described above (step S107).

[0056] [effect] (1) The processing liquid adjustment device 1 of this embodiment is a processing liquid adjustment device 1 that adjusts the processing liquid PL supplied to a processing device 100 that processes a substrate W with a phosphoric acid solution which is a processing liquid PL, and comprises an adjustment tank T2 for storing the processing liquid PL, a processing liquid supply unit J for supplying the processing liquid PL into the adjustment tank T2, a heater H2 for heating the processing liquid PL, a silica supply unit K for supplying silica to the processing liquid PL in the adjustment tank T2, a cooling unit D for lowering the temperature of the processing liquid PL in the adjustment tank T2, and a control unit E for controlling the heater H2, the silica supply unit K, the processing liquid supply unit J, and the cooling unit D.

[0057] The control unit E includes a new liquid supply control unit 24 that causes the processing liquid supply unit J to supply processing liquid PL into the adjustment tank T2, a silica supply control unit 25 that causes the silica supply unit K to supply silica to the processing liquid PL in the adjustment tank T2, a heating control unit 26 that causes the heater H2 to bring the processing liquid PL in the adjustment tank T2 to a first temperature, a temperature maintenance control unit 27 that causes the heater H2 to maintain the processing liquid PL in the adjustment tank T2, to which silica has been supplied, at a first temperature, and a cooling control unit D that, after the temperature maintenance control unit 27 has maintained the first temperature, cools the temperature of the processing liquid PL in the adjustment tank T2 to a second temperature lower than the first temperature.

[0058] Furthermore, the processing solution preparation method of this embodiment is a method for preparing the processing solution PL supplied to a processing apparatus 100 that processes a substrate W with a phosphoric acid solution which is the processing solution PL, and includes a processing solution supply step of supplying the processing solution PL into a preparation tank T2; a heating step of heating the processing solution PL in the preparation tank T2 to a first temperature; a silica supply step of supplying silica to the processing solution PL in the preparation tank T2; a temperature maintenance step of maintaining the processing solution PL in the preparation tank T2, to a first temperature, after the silica has been supplied; and a cooling step of having a cooling unit D cool the temperature of the processing solution PL in the preparation tank T2 to a second temperature lower than the first temperature after the temperature maintenance step.

[0059] Therefore, silica solution containing silica is supplied to the treatment solution PL, which is a phosphoric acid solution in the adjustment tank T2, and the treatment solution PL is heated to a relatively high first temperature, which is the temperature at which silica dissolves easily, and maintained at the first temperature. This allows silica to dissolve quickly in the treatment solution PL. Subsequently, the cooling unit D cools the treatment solution PL in the adjustment tank T2 to a relatively low second temperature, which is near the temperature at which the substrate W is processed. This allows the temperature of the treatment solution PL in the adjustment tank T2 to be cooled quickly, and a treatment solution PL with dissolved silica at the desired temperature can be obtained in a short time.

[0060] (2) The cooling unit D is the processing liquid supply unit J, and the cooling control unit 28 causes the processing liquid supply unit J to supply processing liquid PL at a second temperature or lower into the adjustment tank T2. In the cooling process, the cooling unit D supplies processing liquid PL at a second temperature or lower into the adjustment tank T2. Therefore, by supplying processing liquid PL into the adjustment tank T2, the processing liquid PL in the adjustment tank T2 can be quickly cooled.

[0061] (3) The processing liquid supply unit J has a flow meter FM that measures the flow rate of the processing liquid PL supplied into the adjustment tank T2, and the temperature reduction control unit 28 causes the processing liquid supply unit J to supply the processing liquid PL until the integrated flow rate that cools the processing liquid PL in the adjustment tank T2 to a second temperature is reached. As a result, the processing liquid PL can be accurately supplied to the adjustment tank T2 at the flow rate required for temperature reduction, so that the temperature of the processing liquid PL in the adjustment tank T2 can be reliably reduced to a second temperature.

[0062] (4) The temperature reduction control unit 28 causes the temperature reduction control unit J to supply a quantity of the temperature reduction control unit to the temperature reduction control unit J that is at or below the second temperature, based on the first temperature, the difference between the first temperature and the second temperature, and the amount of the temperature reduction control unit to the temperature reduction control unit. Therefore, by supplying an appropriate amount of temperature reduction control unit to the temperature required for temperature reduction, the temperature reduction control unit can be made to the second temperature.

[0063] (5) The silica supply control unit 25 causes the silica supply unit K to supply silica so that the silica saturation dissolution concentration is less than the temperature of the processing liquid PL supplied to the processing apparatus 100. This suppresses the precipitation of silica between the time silica is supplied to the processing liquid PL and dissolved, and the time the processing liquid PL is supplied to the processing apparatus 100 after the cooling process.

[0064] (6) The heating control unit 26 has a temperature sensor TS for measuring the temperature of the processing liquid PL in the adjustment tank T2, and heats the heater H2 until the temperature of the processing liquid PL in the adjustment tank T2, as measured by the temperature sensor TS, reaches a first temperature. In this way, the processing liquid PL in the adjustment tank T2 to which silica has been supplied can be accurately heated to a first temperature at which silica is easily dissolved.

[0065] [Second Embodiment] [composition] Next, a second embodiment will be described. The second embodiment is basically configured the same as the first embodiment. However, as shown in Figure 3, the processing liquid adjustment device 1 of the second embodiment has a gas supply unit A that supplies gas to the liquid surface of the processing liquid PL in the adjustment tank T2. One end of the gas supply unit A is connected to a gas supply source (not shown) and has an air supply pipe R4 that extends into the adjustment tank T2. The other end of the air supply pipe R4 is provided on the upper surface of the adjustment tank T2. This allows gas to be supplied to the liquid surface of the processing liquid PL in the adjustment tank T2. The gas supply unit A constitutes a cooling unit D that lowers the temperature of the processing liquid PL in the adjustment tank T2. The supplied gas is, for example, N2 gas. It is also preferable that the supplied gas is pre-cooled. By supplying cooled gas to the liquid surface of the processing liquid PL in the adjustment tank T2 from the air supply pipe R4, the temperature of the processing liquid PL is lowered. Here, the temperature control unit 28 causes the gas supply unit A to supply gas until the temperature of the processing liquid PL, measured by the temperature sensor TS, is measured to be the second temperature.

[0066] Furthermore, the processing liquid adjustment device 1 of the second embodiment has a gas discharge section EX for exhausting gas from the adjustment tank T2. The gas discharge section EX is connected to an exhaust device (not shown) and is connected to an exhaust pipe R5 that extends into the adjustment tank T2.

[0067] [Operation] The operation of the substrate processing apparatus SS of this embodiment, as described above, will be explained with reference to the flowchart in Figure 4, in addition to Figure 3. Note that the operation similar to that of the first embodiment will be omitted from the explanation, and only the differences in the preparation process of the processing solution PL compared to the first embodiment will be explained.

[0068] Similar to step S101 above, when the processing liquid PL in the adjustment tank T2 is supplied to the supply tank T1 (step S200), room temperature processing liquid PL is supplied from the new liquid piping R2, and the processing liquid PL in the adjustment tank T2 is replenished (processing liquid supply step: step S201). At this time, the total amount of processing liquid PL that needs to be replenished is supplied. For example, if the total replenishment amount is 7.5L, 7.5L is replenished.

[0069] With valve V2a closed and valve V2b open, heater H2 heats the processing liquid PL circulating through the liquid supply pipe S2 and adjustment tank T2 (heating step: step S202). This raises the temperature of the processing liquid PL, as measured by the temperature sensor TS, to the first temperature (NO in step S203).

[0070] Once the temperature of the processing liquid PL has been heated to the first temperature (YES in step S203), silica liquid is supplied to the processing liquid PL in the adjustment tank T2 from the additive pipe R3 (silica supply step: step S204). Heater H2 continues to heat so as to maintain the first temperature for a set time until the silica supplied as silica liquid dissolves (temperature maintenance step: NO in step S205).

[0071] Once the set time has elapsed (YES in step S205), cooled gas is supplied to the adjustment tank T2 from the air supply pipe R4 (cooling process: step S206). The supplied gas does not need to be cooled, as it only needs to be able to cool the processing liquid PL, which has been heated for the dissolution of silica, to a second temperature, which is close to the temperature at which the substrate W is processed. The gas supplied to the processing liquid PL is exhausted from the exhaust pipe R5.

[0072] By supplying gas in this manner, the temperature of the processing liquid PL, as measured by the temperature sensor TS, is lowered to the second temperature (NO in step S207). Once the temperature of the processing liquid PL has dropped to the second temperature (YES in step S207), the heater H2 maintains the temperature of the circulating processing liquid PL at the second temperature until it is sent to the supply tank T1 (step S208).

[0073] [effect] In this embodiment, the cooling unit D is a gas supply unit A that supplies gas to the processing liquid PL in the adjustment tank T2, and the cooling control unit 28 causes the gas supply unit A to supply gas to the processing liquid PL in the adjustment tank T2. Furthermore, during the cooling process, the cooling unit D supplies gas to the processing liquid PL in the adjustment tank T2.

[0074] Therefore, the temperature of the treatment liquid PL in the adjustment tank T2 can be lowered to a second temperature by the gas. In addition, since the evaporated water vapor in the adjustment tank T2 is replaced by gas, the evaporation of pure water contained in the treatment liquid PL can be promoted, which promotes the concentration of the phosphoric acid solution in the treatment liquid PL, and the concentration of phosphoric acid in the treatment liquid PL can be adjusted.

[0075] Furthermore, in this embodiment, there is a temperature sensor TS that measures the temperature of the processing liquid PL in the adjustment tank T2, and the cooling control unit 28 causes the cooling unit D to cool the processing liquid PL in the adjustment tank T2 until the temperature measured by the temperature sensor TS reaches a second temperature. Therefore, the temperature of the processing liquid PL can be accurately cooled to a second temperature, which is close to the temperature at which the substrate W is processed.

[0076] [Differentiation] The above embodiment can also be modified as follows: (1) The temperature of the processing liquid PL is not limited to the values ​​exemplified above. For example, the first temperature is not limited to 162°C. The first temperature should be any temperature at which silica supplied to the processing liquid PL dissolves easily, for example, 155-170°C. Also, the second temperature is not limited to 147°C. The second temperature should be less than the first temperature and above the temperature at which the substrate W is processed, for example, 140-150°C. If the difference between the first and second temperatures changes due to a change in the target temperatures of the first and second temperatures, it is advisable to supply the processing liquid PL at room temperature to reduce the temperature difference. The processing liquid PL supplied by the processing liquid supply unit J does not have to be at room temperature. For example, if the processing liquid PL is supplied before the heating process, a processing liquid PL at a temperature higher than room temperature may be supplied. This allows the temperature to rise to the first temperature in a short time.

[0077] (2) The cooling unit D may be a cooling device installed in the middle of the liquid supply pipe S2 that circulates the processing liquid PL from the adjustment tank T2. For example, a cooling device equipped with a Peltier element may be used. The cooling device can cool the processing liquid PL passing through the liquid supply pipe S2 by cooling the liquid supply pipe S2.

[0078] (3) The heater H2 may be located inside the adjustment tank T2. The processing liquid adjustment device 1 may also have a concentration meter for measuring the silica concentration. For example, a concentration meter may be provided to measure the silica concentration of the processing liquid PL in the adjustment tank T2. In this case, the silica concentration contained in the processing liquid PL, which has been cooled to a second temperature by the cooling process, can be measured, and the processing liquid supply unit J can supply new processing liquid PL based on the measurement result, thereby making the processing liquid PL in the adjustment tank T2 have an accurate silica concentration suitable for processing the substrate W.

[0079] (4) In the above embodiment, the temperature sensor TS is provided in the adjustment tank T2, but is not limited thereto. For example, the temperature sensor TS may be provided in the middle of the liquid supply pipe S2 and measure the temperature of the processing liquid PL in the adjustment tank T2 by measuring the temperature of the processing liquid PL flowing through the liquid supply pipe S2.

[0080] (5) The order of the preparation process for the treatment liquid PL is not limited to the examples shown above. For example, the silica liquid may be supplied to the preparation tank T2 first, and then the new liquid may be supplied, or the silica liquid and the new liquid may be supplied simultaneously.

[0081] (6) The additive pipe R3 is connected to the adjustment tank T2, but it may also be connected in the middle of the new liquid pipe R2. In this case, it is preferable that the additive pipe R3 is connected downstream of the flow meter FM that measures the flow rate of the treatment liquid PL. This ensures that the silica supplied from the additive pipe R3 passes through the new liquid pipe R2 before being supplied to the adjustment tank T2. With this configuration, when the supply of new liquid is after the supply of silica, or at the same time as the supply of silica, the silica that has flowed into the new liquid pipe R2 can be flushed into the adjustment tank T2 by the new liquid. Therefore, it is possible to suppress the residue of silica in the new liquid pipe R2 and supply an accurate amount of silica.

[0082] (7) A processing liquid preparation device 1 may be configured to include both the cooling unit D of the first embodiment and the cooling unit D of the second embodiment. In other words, the cooling time may be shortened by supplying the processing liquid PL and gas during the cooling process.

[0083] (8) The total amount of treatment liquid PL to be replenished was set to 7.5 L, but is not limited to this. If the total amount of treatment liquid PL to be replenished is changed, the amount of treatment liquid PL supplied in the cooling process is set in advance so that the temperature of treatment liquid PL is reduced to the second temperature by supplying it to the treatment liquid PL in the adjustment tank T2 during the cooling process.

[0084] (9) The gas supply unit A supplies gas to the liquid surface of the processing liquid PL in the adjustment tank T2, but is not limited to this. For example, the gas supply unit A may supply gas into the processing liquid PL in the adjustment tank T2. In this case, the other end of the air supply pipe R4 may be provided on the bottom surface of the adjustment tank T2.

[0085] (10) The substrate processing apparatus SS may be configured to circulate the processing liquid PL between the processing liquid adjustment device 1 and the processing apparatus 100. For example, the recovery piping C may be provided to send the liquid from the processing apparatus 100 to the supply tank T1 or adjustment tank T2 of the processing liquid adjustment device 1. In this way, the substrate processing apparatus SS can circulate the processing liquid PL between the processing liquid adjustment device 1 and the processing apparatus 100.

[0086] (11) As described above, the tank T for dissolving silica and lowering the temperature of the processing liquid PL can also be applied to the recovery tank T3 in a processing liquid adjustment device 1, which has a recovery tank T3 for storing the processing liquid PL recovered from the processing device 100 via the recovery piping C, and a buffer tank T4 for temporarily storing the processing liquid PL from the recovery tank T3 and supplying it to the supply tank T1, as shown in Figure 5.

[0087] Figure 5 shows an example in which the recovery tank T3 functions as a regulating tank by providing a silica supply unit K, a cooling unit D, and a temperature sensor TS similar to those in the first embodiment. The recovery tank T3 is provided with a circulation path that includes a pump P3 and a heater H3, which is a heating unit. In this case as well, silica is supplied from the silica supply unit K to the processing liquid PL in the recovery tank T3, which is heated by the heater H3, and the processing liquid PL can be cooled by the new liquid supplied from the new liquid piping R2 that constitutes the cooling unit D. In addition, the recovery tank T3 may be provided with an air supply piping R4 as a cooling unit D and an exhaust piping R5 as a gas discharge unit EX, similar to those in the second embodiment. Furthermore, both the first and second embodiments may be applied to the recovery tank T3.

[0088] Furthermore, the buffer tank T4 having a circulation path provided with a pump P4 and a heater H4 may be configured to accept either the first embodiment, the second embodiment, or both the first and second embodiments.

[0089] Alternatively, the supply tank T1 may be omitted, and the processing liquid PL may be supplied directly from the adjustment tank T2 to the processing device 100. In other words, the supply tank T1 in the above embodiment may be replaced by the first embodiment, the second embodiment, or both the first and second embodiments.

[0090] (12) The processing apparatus 100 that supplies the processing liquid PL to the substrate W is not limited to a single-wafer type, but may also be a batch type. However, in a batch type, fluctuations in parameters such as the temperature and concentration of the processing liquid PL can be adjusted over time in the processing tank before immersion, whereas in a single-wafer type, the processing liquid PL supplied to the substrate W must be supplied in such a way that the parameters affecting process performance remain constant, so it is preferable to apply it to a single-wafer processing apparatus 100.

[0091] [Other embodiments] Although embodiments and modifications of the present invention have been described above, these embodiments and modifications are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments described above can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the invention described in the claims. [Explanation of Symbols]

[0092] 1. Processing liquid preparation device 10a container 21 Substrate Processing Control Unit 22 Processing liquid supply control unit 23 Processing liquid replenishment control unit 24 New liquid supply control unit 25 Silica Supply Control Unit 26 Heating Control Unit 27 Temperature maintenance control unit 28 Temperature drop control section 29 Memory section 40a container 100 Processing Units 100a Chamber 101 Rotating part 101a Rotating body 101b Holding part 101c power source 102 Supply section 102a Nozzle 102b Arm 103 Recovery Department A. Gas supply unit C Recovery piping D Cooling section E Control Unit EX Gas Discharge Section F filter FM, SM flowmeter H heating section H1~H4 Heater J Processing liquid supply unit K Silica Supply Department P1-P4 Pumps PL treatment solution R1 return pipe R2 New liquid piping R3 addition piping R4 Air Intake Piping R5 Exhaust Piping S Supply Route S1 Supply Piping S2 Fluid transfer piping SS substrate processing equipment T Tank T1 Supply Tank T2 Adjustment Tank T3 Recovery Tank T4 Buffer Tank TS temperature sensor V1a~V2b, Vz valve W board Z discharge path

Claims

1. A processing liquid preparation device for preparing the processing liquid supplied to a processing apparatus that processes a substrate with a phosphoric acid solution, the processing liquid being prepared, A regulating tank for storing the aforementioned processing liquid, A processing liquid supply unit that supplies the processing liquid into the adjustment tank, A heating unit for heating the aforementioned processing liquid, A silica supply unit that supplies silica to the processing liquid in the adjustment tank, A cooling unit for lowering the temperature of the processing liquid in the adjustment tank, A control unit that controls the heating unit, the silica supply unit, the processing liquid supply unit, and the cooling unit, It has, The control unit, The processing liquid supply unit includes a new liquid supply control unit that supplies the processing liquid into the adjustment tank, The silica supply unit includes a silica supply control unit that supplies the silica to the processing liquid in the adjustment tank, The heating unit includes a heating control unit that brings the processing liquid in the adjustment tank to a first temperature, The heating unit includes a temperature maintenance control unit that maintains the processing liquid in the adjustment tank, to which the silica is supplied, at a first temperature, The temperature reduction unit includes a temperature reduction control unit that, after the temperature maintenance control unit maintains the first temperature, reduces the temperature of the processing liquid in the adjustment tank to a second temperature lower than the first temperature, A processing liquid preparation device characterized by having the following features.

2. The cooling unit is the processing liquid supply unit, The processing liquid adjustment apparatus according to claim 1, characterized in that the temperature reduction control unit causes the processing liquid supply unit to supply the processing liquid at a temperature lower than the second temperature into the adjustment tank.

3. The cooling unit is a gas supply unit that supplies gas to the processing liquid in the adjustment tank. The processing liquid adjustment apparatus according to claim 1, characterized in that the temperature reduction control unit causes the gas supply unit to supply the gas to the processing liquid in the adjustment tank.

4. The processing liquid supply unit has a flow meter for measuring the flow rate of the processing liquid supplied into the adjustment tank. The processing liquid adjustment apparatus according to claim 2, characterized in that the temperature reduction control unit causes the processing liquid supply unit to supply the processing liquid until the integrated flow rate at which the processing liquid in the adjustment tank cools to the second temperature is reached.

5. The processing liquid adjustment device according to claim 2, characterized in that the temperature reduction control unit causes the processing liquid to supply to the processing liquid supply unit an amount of processing liquid at or below the second temperature, determined based on the first temperature, the difference between the first temperature and the second temperature, and the amount of processing liquid in the adjustment tank maintained at the first temperature.

6. The processing liquid preparation apparatus according to claim 1, characterized in that the silica supply control unit causes the silica supply unit to supply silica to the processing liquid so that the silica concentration is less than the silica saturation dissolution concentration corresponding to the temperature of the processing liquid supplied to the processing apparatus.

7. The adjustment tank has a temperature sensor for measuring the temperature of the processing liquid inside the adjustment tank. The processing liquid adjustment apparatus according to claim 1, characterized in that the heating control unit causes the heating unit to heat the processing liquid in the adjustment tank, as measured by the temperature sensor, until the temperature of the processing liquid in the adjustment tank is measured to be the first temperature.

8. The adjustment tank has a temperature sensor for measuring the temperature of the processing liquid inside the adjustment tank. The processing liquid adjustment apparatus according to claim 1, characterized in that the temperature reduction control unit causes the temperature of the processing liquid in the adjustment tank, as measured by the temperature sensor, to be reduced by the temperature reduction unit until it is measured to be the second temperature.

9. A processing liquid preparation device according to any one of claims 1 to 8, The aforementioned processing apparatus, A substrate processing apparatus characterized by having

10. A method for preparing a processing solution that is supplied to a processing apparatus for processing a substrate with a phosphoric acid solution, the processing solution being prepared, A process of supplying the processing liquid into the adjustment tank, A heating step of heating the processing liquid in the adjustment tank to a first temperature, A silica supply step of supplying silica to the processing liquid in the adjustment tank, A temperature maintenance step of maintaining the processing liquid in the adjustment tank supplied with the silica at a first temperature, The cooling unit, after the temperature maintenance step, performs a cooling step in which it lowers the temperature of the processing liquid in the adjustment tank to a second temperature lower than the first temperature, A method for preparing a processing solution, characterized by including the following:

11. The method for preparing a processing liquid according to claim 10, characterized in that the cooling unit supplies the processing liquid at a temperature lower than the second temperature into the adjustment tank during the cooling step.

12. The method for preparing a processing liquid according to claim 10, characterized in that the cooling unit supplies gas to the processing liquid in the adjustment tank during the cooling step.

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