Indication device

Abstract

This invention provides a high-definition display device with a light detection function. [Solution] A display device having a first pixel, a second pixel, and a third pixel, wherein the first to third pixels each have a first sub-pixel, a second sub-pixel, and a third sub-pixel, respectively, the first and second pixels share a fourth sub-pixel, the third pixel has a fifth sub-pixel, full-color display is possible using the first to third sub-pixels, and the fourth and fifth sub-pixels each have one of the following different types: an infrared light emitting device, a first light receiving device, and a second light receiving device.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device, a display module, and electronic equipment.

[0002] It should be noted that one aspect of the present invention is not limited to the above-mentioned technical field. Examples of technical fields of one aspect of the present invention include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, electronic devices, lighting devices, input devices (e.g., touch sensors), input / output devices (e.g., touch panels), methods for driving them, or methods for manufacturing them. [Background technology]

[0003] In recent years, there has been a growing demand for higher resolution display devices. Examples of devices requiring high-resolution displays include those for virtual reality (VR), augmented reality (AR), substitutional reality (SR), and mixed reality (MR), and these are currently undergoing extensive development. Display devices used in these applications require both high resolution and miniaturization.

[0004] As a display device, for example, a light-emitting device (also called a light-emitting element) has been developed. Light-emitting devices that utilize the electroluminescence (EL) phenomenon (also called EL devices or EL elements) have features such as being easy to make thin and light, being able to respond quickly to input signals, and being able to be driven using a DC constant voltage power supply, and are being applied to display devices.

[0005] For example, an example of a display device using organic EL elements is described in Patent Document 1. As with the display device in Patent Document 1, when high display quality is required, a display device with a high pixel count and high resolution may be necessary. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] International Publication No. 2019 / 220278 [Overview of the Initiative] [Problems that the invention aims to solve]

[0007] Devices for virtual reality (VR) and augmented reality (AR) require display devices with high display quality, such as those shown in Patent Document 1. In this case, the display is performed in a wearable housing, such as glasses or goggles, so miniaturization and weight reduction of the display device are important factors. For wearable housings, for example, the size of the display device needs to be reduced to approximately 2 inches or less, or even 1 inch or less.

[0008] Furthermore, VR and AR devices are increasingly incorporating sensors for enhanced functionality.

[0009] One aspect of the present invention aims to provide a high-resolution display device having a high-precision light detection function. Another aspect of the present invention aims to provide a high-resolution display device having a high-precision light detection function. Another aspect of the present invention aims to provide a highly reliable display device having a high-precision light detection function.

[0010] Furthermore, the description of these problems does not preclude the existence of other problems. One aspect of the present invention does not necessarily have to solve all of these problems. It is possible to extract other problems from the description in the specification, drawings, and claims. [Means for solving the problem]

[0011] One aspect of the present invention is a display device having a first pixel, a second pixel, and a third pixel, wherein the first to third pixels each have a first sub-pixel, a second sub-pixel, and a third sub-pixel, the first and second pixels share a fourth sub-pixel, the third pixel has a fifth sub-pixel, full-color display is possible using the first to third sub-pixels, and the fourth and fifth sub-pixels each have one of the following distinct devices: an infrared light emitting device, a first light receiving device, and a second light receiving device.

[0012] Preferably, the third pixel has a sixth sub-pixel. Preferably, the sixth sub-pixel has one of the following: a light-emitting device, a first light-receiving device, and a second light-receiving device, which is different from the fourth and fifth sub-pixels. Preferably, the sub-pixel having the first light-receiving device detects at least infrared light, and the sub-pixel having the second light-receiving device detects at least visible light.

[0013] The above-described display device preferably has a fourth pixel. The fourth pixel preferably has a first sub-pixel, a second sub-pixel, a third sub-pixel, and a sixth sub-pixel. The sixth sub-pixel preferably has one of the following: a light-emitting device, a first light-receiving device, and a second light-receiving device, which is different from the fourth sub-pixel and the fifth sub-pixel. The sub-pixel having the first light-receiving device preferably detects at least infrared light, and the sub-pixel having the second light-receiving device preferably detects at least visible light.

[0014] One aspect of the present invention has a first pixel, a second pixel, and a third pixel, the first to third pixels each having a first sub-pixel, a second sub-pixel, and a third sub-pixel, the first and second pixels share a fourth sub-pixel, the third pixel has a fifth sub-pixel, the first sub-pixel has a first light-emitting device and a first color layer, the second sub-pixel has a second light-emitting device and a second color layer, the third sub-pixel has a third light-emitting device and a third color layer, the first light-emitting device has a first pixel electrode, a first EL layer on the first pixel electrode, and a common electrode on the first EL layer, and the second The first light-emitting device has a second pixel electrode, a second EL layer on the second pixel electrode, and a common electrode on the second EL layer. The third light-emitting device has a third pixel electrode, a third EL layer on the third pixel electrode, and a common electrode on the third EL layer. The first to third EL layers all have the same configuration and are spaced apart from each other. The first to third colored layers each transmit light of a different color. The fourth and fifth sub-pixels each have one of the following: a fourth light-emitting device that emits infrared light, a first light-receiving device, and a second light-receiving device, all of which are different from each other.

[0015] Preferably, the third pixel has a sixth sub-pixel. The fourth sub-pixel has a second light-receiving device, the fifth sub-pixel has a fourth light-emitting device, and the sixth sub-pixel has a first light-receiving device. Preferably, the fourth sub-pixel detects at least visible light, and the sixth sub-pixel detects at least infrared light.

[0016] The above display device preferably has a fourth pixel. The fourth pixel preferably has a first sub-pixel, a second sub-pixel, a third sub-pixel, and a sixth sub-pixel. The fourth sub-pixel has a second light-receiving device, the fifth sub-pixel has a fourth light-emitting device, the sixth sub-pixel has a first light-receiving device, the fourth sub-pixel preferably detects at least visible light, and the sixth sub-pixel preferably detects at least infrared light. Or, the fourth sub-pixel has a fourth light-emitting device, the fifth sub-pixel has a first light-receiving device, the sixth sub-pixel has a second light-receiving device, the fifth sub-pixel preferably detects at least infrared light, and the sixth sub-pixel preferably detects at least visible light.

[0017] The fourth light-emitting device has a fourth pixel electrode, a fourth EL layer on the fourth pixel electrode, and a common electrode on the fourth EL layer. It is preferable that the first EL layer to the fourth EL layer all have the same configuration and are separated from each other.

[0018] The number of the first pixels and the number of the third pixels may be the same. The number of the first pixels may be half or less than the number of the third pixels.

[0019] One aspect of the present invention is a display module having a display device with any of the above configurations, to which a connector such as a flexible printed circuit board (Flexible Printed Circuit, hereinafter referred to as FPC) or TCP (Tape Carrier Package) is attached, or a display module such as a display module in which an integrated circuit (IC) is mounted by a COG (Chip On Glass) method or a COF (Chip On Film) method, etc.

[0020] One aspect of the present invention is an electronic device having the above display module and at least one of a housing, a battery, a camera, a speaker, and a microphone.

Effects of the Invention

[0021] According to one aspect of the present invention, a display device with high-precision light detection function and high definition can be provided. According to one aspect of the present invention, a display device with high-precision light detection function and high resolution can be provided. According to one aspect of the present invention, a display device with high-precision light detection function and high reliability can be provided.

[0022] Note that the description of these effects does not preclude the existence of other effects. One aspect of the present invention does not necessarily have to have all of these effects. It is possible to extract other effects from the description of the specification, drawings, and claims.

Brief Description of the Drawings

[0023] [Figure 1] FIG. 1A and FIG. 1B are top views showing an example of a display device. [Figure 2] FIG. 2A and FIG. 2B are top views showing an example of a display device. [Figure 3] FIG. 3A and FIG. 3B are top views showing an example of a display device. [Figure 4] FIGS. 4A to 4G are top views showing an example of a pixel. [Figure 5] FIGS. 5A to 5C are cross-sectional views showing an example of a display device. [Figure 6] FIG. 6A and FIG. 6B are cross-sectional views showing an example of a display device. [Figure 7] FIGS. 7A to 7C are cross-sectional views showing an example of a display device. [Figure 8] FIGS. 8A to 8C are cross-sectional views showing an example of a display device. [Figure 9] FIGS. 9A to 9C are cross-sectional views showing an example of a display device. [Figure 10] FIGS. 10A to 10C are cross-sectional views showing an example of a display device. [Figure 11] FIG. 11A and FIG. 11B are cross-sectional views showing an example of a display device. [Figure 12] FIGS. 12A to 12C are cross-sectional views showing an example of a display device. [Figure 13]Figures 13A to 13C are cross-sectional views showing an example of a display device. [Figure 14] Figures 14A to 14D are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 15] Figures 15A to 15C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 16] Figures 16A to 16C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 17] Figures 17A and 17B are perspective views showing an example of a display device. [Figure 18] Figure 18 is a cross-sectional view showing an example of a display device. [Figure 19] Figure 19 is a cross-sectional view showing an example of a display device. [Figure 20] Figure 20 is a cross-sectional view showing an example of a display device. [Figure 21] Figure 21 is a cross-sectional view showing an example of a display device. [Figure 22] Figure 22 is a cross-sectional view showing an example of a display device. [Figure 23] Figure 23 is a cross-sectional view showing an example of a display device. [Figure 24] Figure 24 is a perspective view showing an example of a display device. [Figure 25] Figure 25A is a cross-sectional view showing an example of a display device. Figures 25B and 25C are cross-sectional views showing an example of a transistor. [Figure 26] Figures 26A to 26D are cross-sectional views showing an example of a display device. [Figure 27] Figures 27A to 27F show examples of the configuration of a light-emitting device. [Figure 28] Figures 28A and 28B show examples of the configuration of a light receiving device. Figures 28C to 28E show examples of the configuration of a display device. [Figure 29] Figures 29A to 29D show examples of electronic devices. [Figure 30] Figures 30A to 30F show examples of electronic devices. [Figure 31] Figures 31A to 31G show examples of electronic devices. [Modes for carrying out the invention]

[0024] Embodiments will be described in detail with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the present invention. Accordingly, the present invention shall not be construed as being limited to the descriptions of the embodiments shown below.

[0025] In the invention described below, the same reference numerals are used in common across different drawings for identical parts or parts having similar functions, and repeated explanations are omitted. Furthermore, when referring to similar functions, the same hatching pattern may be used, and reference numerals may not be assigned.

[0026] Furthermore, for the sake of ease of understanding, the position, size, and scope of each component shown in the drawings may not represent their actual position, size, and scope. Therefore, the disclosed invention is not necessarily limited to the position, size, and scope disclosed in the drawings.

[0027] It should be noted that the terms "film" and "layer" can be interchanged depending on the context or situation. For example, the term "conductive layer" can be changed to "conductive film." Or, for example, the term "insulating film" can be changed to "insulating layer."

[0028] In this specification, devices fabricated using a metal mask or an FMM (Fine Metal Mask, a high-resolution metal mask) may be referred to as MM (Metal Mask) structured devices. Furthermore, in this specification, devices fabricated without using a metal mask or an FMM may be referred to as MML (Metal Maskless) structured devices.

[0029] In this specification, a structure that creates separate light-emitting layers for light-emitting devices with different emission wavelengths may be referred to as an SBS (Side By Side) structure. Because the SBS structure allows for the optimization of materials and configurations for each light-emitting device, it increases the freedom of material and configuration selection, making it easier to improve brightness and reliability.

[0030] In this specification, holes or electrons may be referred to as "carriers." Specifically, a hole injection layer or electron injection layer may be called a "carrier injection layer," a hole transport layer or electron transport layer may be called a "carrier transport layer," and a hole block layer or electron block layer may be called a "carrier block layer." Note that the above-mentioned carrier injection layer, carrier transport layer, and carrier block layer may not be clearly distinguishable by their cross-sectional shape or characteristics. Furthermore, a single layer may combine the functions of two or three of these carrier injection, carrier transport, and carrier block layers.

[0031] In this specification, a light-emitting device has an EL layer between a pair of electrodes. The EL layer has at least a light-emitting layer. A light-receiving device has at least an active layer functioning as a photoelectric conversion layer between a pair of electrodes. In this specification, one of the pair of electrodes may be referred to as a pixel electrode and the other as a common electrode.

[0032] (Embodiment 1) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 1 to 13.

[0033] A display device according to one aspect of the present invention has a first pixel, a second pixel, and a third pixel. The first to third pixels each have a first sub-pixel, a second sub-pixel, and a third sub-pixel, respectively. The first and second pixels share a fourth sub-pixel. The third pixel has a fifth sub-pixel. Full-color display is possible using the first to third sub-pixels. The fourth and fifth sub-pixels each have one of the following, which are different from each other: an infrared light emitting device (also called a light-emitting element), a first light-receiving device (also called a light-receiving element), and a second light-receiving device.

[0034] Preferably, the third pixel further has a sixth sub-pixel. The sixth sub-pixel may be one of the light-emitting device, the first light-receiving device, and the second light-receiving device, which is different from the fourth and fifth sub-pixels.

[0035] Furthermore, a display device according to one embodiment of the present invention preferably further has a fourth pixel. The fourth pixel has a first sub-pixel, a second sub-pixel, a third sub-pixel, and a sixth sub-pixel.

[0036] The sub-pixel having the first light-receiving device preferably detects at least infrared light. Specifically, the sub-pixel preferably detects the light emitted by an infrared light-emitting device in a display device according to one aspect of the present invention.

[0037] It is preferable that the subpixel having a second light-receiving device detects at least visible light. Specifically, it is preferable that the subpixel detects light in at least a portion of the wavelength range of the light emitted by the first to third subpixels.

[0038] A display device according to one aspect of the present invention has a light-emitting device and a light-receiving device in each pixel. In a display device according to one aspect of the present invention, since the display unit has a light-receiving function, imaging can be performed using the display unit. For example, the display unit can perform imaging while displaying an image. In addition, the display unit can emit light as a light source in some sub-pixels and display an image in other sub-pixels.

[0039] For example, a combination of the first to third subpixels could be a configuration that emits red (R), green (G), and blue (B) light, respectively. Alternatively, a combination of these three subpixels could be a configuration that emits yellow (Y), cyan (C), and magenta (M) light, respectively.

[0040] Among the fourth to sixth sub-pixels, the sub-pixels having a light-receiving device can be configured to detect visible light, infrared light, or both visible and infrared light.

[0041] When a pixel has five or six types of subpixels, the manufacturing process of the display device becomes complex, which can increase manufacturing costs. Therefore, in one embodiment of the present invention, the light-emitting device that functions as a display device uses an EL layer with the same configuration, and full-color display is achieved by creating different color layers for each color exhibited by the subpixels.

[0042] For example, subpixels that emit red, green, and blue light can all be realized by using light-emitting devices (e.g., white light-emitting devices) that have the same EL layer configuration, and creating separate colored layers for each of the red, green, and blue light. In this case, a light-emitting device that emits infrared light is used for subpixels that emit infrared (IR) light.

[0043] Specifically, one aspect of the present invention has a first pixel, a second pixel, and a third pixel, the first to third pixels each having a first sub-pixel, a second sub-pixel, and a third sub-pixel, the first and second pixels share a fourth sub-pixel, the third pixel has a fifth sub-pixel, the first sub-pixel has a first light-emitting device and a first color layer, the second sub-pixel has a second light-emitting device and a second color layer, the third sub-pixel has a third light-emitting device and a third color layer, and the first light-emitting device has a first pixel electrode, a first EL layer on the first pixel electrode, and a common electrode on the first EL layer. The display device comprises a second light-emitting device having a second pixel electrode, a second EL layer on the second pixel electrode, and a common electrode on the second EL layer; a third light-emitting device having a third pixel electrode, a third EL layer on the third pixel electrode, and a common electrode on the third EL layer; the first to third EL layers all have the same configuration and are spaced apart from each other; the first to third colored layers each transmit light of a different color; and the fourth and fifth sub-pixels each have one of the following, which are different from each other: a fourth light-emitting device that emits infrared light, a first light-receiving device, and a second light-receiving device.

[0044] Preferably, the third pixel further has a sixth sub-pixel. For example, the fourth sub-pixel may have a second light-receiving device, the fifth sub-pixel may have a fourth light-emitting device, and the sixth sub-pixel may have a first light-receiving device, with the fourth sub-pixel detecting at least visible light and the sixth sub-pixel detecting at least infrared light. In this case, it is preferable that the fourth sub-pixel detects light in at least a portion of the wavelength range of the light emitted by the first to third sub-pixels. It is preferable that the sixth sub-pixel detects the infrared light emitted by the fifth sub-pixel.

[0045] Furthermore, a display device according to one embodiment of the present invention preferably further has a fourth pixel. The fourth pixel has a first sub-pixel, a second sub-pixel, a third sub-pixel, and a sixth sub-pixel.

[0046] For example, the fourth sub-pixel may have a second light-receiving device, the fifth sub-pixel may have a fourth light-emitting device, and the sixth sub-pixel may have a first light-receiving device. The fourth sub-pixel may detect at least visible light, and the sixth sub-pixel may detect at least infrared light. In this case, it is preferable that the fourth sub-pixel detects light in at least a portion of the wavelength range of the light emitted by the first to third sub-pixels. It is preferable that the sixth sub-pixel detects the infrared light emitted by the fifth sub-pixel.

[0047] Furthermore, for example, the fourth sub-pixel may have a fourth light-emitting device, the fifth sub-pixel may have a first light-receiving device, and the sixth sub-pixel may have a second light-receiving device, with the fifth sub-pixel detecting at least infrared light and the sixth sub-pixel detecting at least visible light. In this case, it is preferable that the fifth sub-pixel detects the infrared light emitted by the fourth sub-pixel. It is preferable that the sixth sub-pixel detects light in at least a portion of the wavelength range of the light emitted by the first to third sub-pixels.

[0048] Furthermore, subpixels exhibiting R, G, B, and IR light may use light-emitting devices having EL layers with the same configuration. For example, subpixels exhibiting R, G, B, and IR light can all be realized by using light-emitting devices that emit both white and infrared light, and creating different colored layers for R, G, and B respectively. By stacking two or more colored layers among R, G, and B, visible light can be blocked, and subpixels exhibiting IR light can be realized.

[0049] Specifically, the fourth light-emitting device includes a fourth pixel electrode, a fourth EL layer on the fourth pixel electrode, and a common electrode on the fourth EL layer, wherein the first to fourth EL layers all have the same configuration and may be spaced apart from each other.

[0050] Furthermore, the first and second light-receiving devices may be light-receiving devices with the same configuration. For example, by using light-receiving devices that detect both visible light and infrared light for both the first and second light-receiving devices, and by superimposing a filter for blocking visible light on the first light-receiving device, the subpixel having the first light-receiving device can be configured to detect only infrared light (i.e., it has a different wavelength range detected than the subpixel having the second light-receiving device).

[0051] Here, subpixels having light-emitting devices are provided with island-shaped light-emitting layers, and subpixels having light-receiving devices are provided with island-shaped active layers (also called photoelectric conversion layers). Furthermore, when subpixels emitting R, G, and B light and subpixels emitting IR light use light-emitting devices with different configurations, the island-shaped light-emitting layers are created differently depending on the light-emitting device. Thus, in a display device according to one aspect of the present invention, it is necessary to create different island-shaped light-emitting layers and island-shaped active layers according to the function of the subpixels.

[0052] In this specification, "island-like" refers to a state in which two or more layers made of the same material and formed in the same process are physically separated. For example, an island-like light-emitting layer refers to a state in which the light-emitting layer and an adjacent light-emitting layer are physically separated.

[0053] Furthermore, when using light-emitting devices with identical EL layers, layers other than the pixel electrodes (such as the light-emitting layer) included in the light-emitting device can be shared by multiple subpixels. As a result, multiple subpixels can share a continuous film. However, some layers included in the light-emitting device are relatively highly conductive. When multiple subpixels share a highly conductive layer as a continuous film, leakage current may occur between the subpixels. In particular, as display devices become higher resolution or have a higher aperture ratio, and the distance between subpixels decreases, this leakage current can become significant enough to be considered non-negligible, potentially leading to a decrease in the display quality of the display device.

[0054] Therefore, in a display device according to one aspect of the present invention, at least a portion of the layers constituting the EL layer is formed in an island shape in each sub-pixel. By separating at least a portion of the layers constituting the EL layer for each sub-pixel, the occurrence of crosstalk between adjacent sub-pixels can be suppressed. This makes it possible to achieve both high resolution and high display quality in the display device.

[0055] For example, island-shaped light-emitting layers can be deposited using a vacuum deposition method with a metal mask. However, with this method, deviations from the design occur in the shape and position of the island-shaped light-emitting layers due to various factors such as the precision of the metal mask, misalignment between the metal mask and the substrate, deflection of the metal mask, and the spreading of the contour of the deposited film due to vapor scattering, making it difficult to achieve high resolution and high aperture ratio in display devices. In addition, the contour of the layer may become blurred during deposition, and the thickness at the edges may become thinner. In other words, the thickness of the island-shaped light-emitting layer may vary depending on the location. Furthermore, when manufacturing large, high-resolution, or high-definition display devices, there is a concern that the low dimensional accuracy of the metal mask and deformation due to heat, etc., may lead to low manufacturing yield.

[0056] Therefore, when manufacturing a display device according to one aspect of the present invention, the light-emitting layer is processed into a fine pattern by photolithography without using a shadow mask such as a metal mask. Specifically, after forming a pixel electrode for each sub-pixel, a light-emitting layer is deposited across multiple pixel electrodes. Subsequently, the light-emitting layer is processed using photolithography to form one island-shaped light-emitting layer for each pixel electrode. This divides the light-emitting layer for each sub-pixel, allowing for the formation of an island-shaped light-emitting layer for each sub-pixel.

[0057] When processing the above-mentioned light-emitting layer into an island shape, a structure in which the processing is performed using photolithography directly above the light-emitting layer is conceivable. In this structure, the light-emitting layer may be damaged (e.g., damage from processing), and its reliability may be significantly impaired. Therefore, when manufacturing a display device according to one aspect of the present invention, it is preferable to use a method in which a mask layer (which may also be called a sacrificial layer) is formed on a layer located above the light-emitting layer (for example, a carrier transport layer or a carrier injection layer, more specifically an electron transport layer or an electron injection layer, etc.), and the light-emitting layer is processed into an island shape. By applying this method, a highly reliable display device can be provided. In this specification, the mask film and the mask layer are each located at least above the light-emitting layer (more specifically, the layer among the layers constituting the EL layer that is processed into an island shape) and have the function of protecting the light-emitting layer during the manufacturing process.

[0058] Thus, the island-shaped light-emitting layer produced by the method for manufacturing a display device according to one aspect of the present invention is not formed using a metal mask with a fine pattern, but rather by processing after the light-emitting layer has been deposited on one surface. Specifically, the island-shaped light-emitting layer is divided and miniaturized using a method such as photolithography. Therefore, it can be made smaller than the size that can be formed using a metal mask. Consequently, it is possible to realize a high-resolution display device or a display device with a high aperture ratio, which has been difficult to achieve until now.

[0059] Furthermore, regarding the processing of the light-emitting layer using photolithography, fewer processing steps are preferable because they allow for reductions in manufacturing costs and improvements in manufacturing yield. In one embodiment of the present invention, the number of processing steps for the light-emitting layer using photolithography can be reduced to two or three, thus enabling the production of display devices with a high yield.

[0060] While it is difficult to reduce the spacing between adjacent light-emitting devices to less than 10 μm using, for example, a metal mask formation method, the above method allows for narrowing the spacing to less than 10 μm, 5 μm or less, 3 μm or less, 2 μm or less, or even 1 μm or less. Furthermore, by using, for example, an exposure apparatus for LSIs, the spacing between adjacent light-emitting devices can be reduced to less than 500 nm, less than 200 nm, less than 100 nm, and even less than 50 nm. This significantly reduces the area of ​​the non-emitting region that may exist between two light-emitting devices, making it possible to approach an aperture ratio of 100%. For example, an aperture ratio of 50% or more, 60% or more, 70% or more, 80% or more, and even 90% or more, can be achieved, and even less than 100%.

[0061] Furthermore, the pattern of the light-emitting layer itself (which can also be called the processing size) can be made extremely small compared to when a metal mask is used. Also, for example, when a metal mask is used to create different types of light-emitting layers, variations in thickness occur between the center and edges of the light-emitting layer, so the effective area that can be used as a light-emitting region is small relative to the area of ​​the light-emitting layer. On the other hand, with the above manufacturing method, since a film deposited to a uniform thickness is processed, island-shaped light-emitting layers can be formed with a uniform thickness. Therefore, even with a fine pattern, almost the entire area can be used as a light-emitting region. As a result, it is possible to manufacture a display device that combines high resolution and a high aperture ratio. In addition, it is possible to achieve miniaturization and weight reduction of the display device.

[0062] Specifically, a display device according to one aspect of the present invention may have a resolution of, for example, 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and may be 20000 ppi or less, or 30000 ppi or less.

[0063] The same manufacturing method described above can be applied to the light-receiving device as to the light-emitting device. The island-shaped active layer of the light-receiving device is not formed using a metal mask with a fine pattern, but rather by processing after depositing the film that will become the active layer onto one surface, so that the island-shaped active layer can be formed with a uniform thickness. In addition, by providing a mask layer on the active layer, the damage that the active layer receives during the manufacturing process of the display device can be reduced, and the reliability of the light-receiving device can be improved.

[0064] A method for manufacturing a display device according to one aspect of the present invention will be described in detail in Embodiment 2.

[0065] [Pixel layout example] Figure 1A shows a top view of the display device 100. The display device 100 has a display unit 102 in which a plurality of pixel units 103A are arranged in a matrix, and a connection unit 140 on the outside of the display unit 102.

[0066] Figure 1A shows an example where the connecting portion 140 is located below the display unit 102 in a top view, but the position of the connecting portion 140 is not particularly limited. The connecting portion 140 only needs to be provided in at least one place on the top, right, left, or bottom of the display unit 102 in a top view, and may be provided so as to surround all four sides of the display unit 102. The top shape of the connecting portion 140 can be a strip, L-shape, U-shape, or frame shape, etc. Also, there may be one or more connecting portions 140. In this specification, the top shape refers to the shape in a plan view, that is, the shape seen from above.

[0067] Figure 1B shows an example of the configuration of pixel unit 103A. Pixel unit 103A has four pixels: two pixels 110a, one pixel 105a, and one pixel 105b.

[0068] Pixel 110a is composed of five sub-pixels: sub-pixels 110R, 110G, 110B, 110IR, and 110S1.

[0069] The top surface shape of the subpixel shown in Figure 1B, etc., corresponds to the top surface shape of the light-emitting region or light-receiving region.

[0070] The top surface shape of the subpixel may include, for example, polygons such as triangles, quadrilaterals (including rectangles and squares), pentagons, polygons with rounded corners, ellipses, or circles.

[0071] Furthermore, the circuit layout constituting the subpixel is not limited to the subpixel range shown in Figure 1B, etc., and may be located outside of it. For example, the transistors in subpixel 110R may be located within the range of subpixel 110R shown in Figure 1B, or some or all of them may be located outside the range of subpixel 110R.

[0072] Figure 1B shows an example where a single pixel 110a is composed of 3 rows and 2 columns. Pixel 110a has a sub-pixel 110R in the first row, a sub-pixel 110G in the second row, and a sub-pixel 110B spanning these two rows. It also has two sub-pixels (sub-pixels 110IR and 110S1) in the third row. In other words, pixel 110 has three sub-pixels (sub-pixels 110R, 110G, and 110S1) in the left column (column 1) and two sub-pixels (sub-pixels 110B and 110IR) in the right column (column 2).

[0073] The pixel unit 103A can also be described as having a first array pattern and a second array pattern that are repeatedly arranged in the X direction. In the first array pattern, sub-pixels 110R, 110G, 110S1, 110R, 110G, and 110S2 are arranged in the Y direction in this order. In the second array pattern, sub-pixels 110B, 110IR, 110B, and 110S2 are arranged in the Y direction in this order. Note that the first and second array patterns share one sub-pixel 110S2.

[0074] The longitudinal direction (also called the long side direction) of sub-pixels 110R, 110G, 110S1, and 110S2 is the X direction. The longitudinal direction of sub-pixel 110B is the Y direction.

[0075] Pixels 105a and 105b each have sub-pixels 110R, 110G, and 110B, respectively, and also share a sub-pixel 110S2.

[0076] Figure 1B shows an example where pixels 105a and 105b are each configured in a 3x2 arrangement. Pixels 105a and 105b each have a sub-pixel 110R in the first row, a sub-pixel 110G in the second row, and a sub-pixel 110B spanning these two rows. Furthermore, pixels 105a and 105b share one sub-pixel 110S2 in the third row. In other words, the sub-pixel 110S2 spans both pixels 105a and 105b.

[0077] Sub-pixel 110R emits red light. Sub-pixel 110G emits green light. Sub-pixel 110B emits blue light. Sub-pixel 110IR emits infrared light.

[0078] Sub-pixels 110S1 and 110S2 detect at least a portion of different wavelength ranges. In this embodiment, the case where sub-pixel 110S1 detects infrared light and sub-pixel 110S2 detects visible light will be mainly described as an example. However, sub-pixel 110S1 may detect visible light and sub-pixel 110S2 may detect infrared light. Furthermore, one of sub-pixels 110S1 or 110S2 may detect both visible and infrared light.

[0079] In the sub-pixel 110S1, the light-receiving device can supply a current corresponding to the intensity of the received light. When the display device of this embodiment is used in a wearable device, for example, the sub-pixel 110S1 that detects infrared light can be used to detect the blinking of the wearable device user. The data obtained from the sub-pixel 110S1 may be used in a system utilizing AI (Artificial Intelligence). For example, an AI-based system can be used to estimate the user's eye fatigue level from the blinking frequency.

[0080] Furthermore, when the display device of this embodiment is used in a wearable device, for example, the sub-pixel 110S1 that detects infrared light can be used to image the area around the eyes, the surface of the eyes, or the inside of the eyes (such as the fundus) of the wearer of the wearable device. Therefore, the wearable device can be equipped with a function to detect one or more of the following selected from the number of blinks, eye movements, and eyelid movements of the user.

[0081] Furthermore, when the display device of this embodiment is used in a wearable device, for example, an image of the wearer's eyes can be captured using the sub-pixel 110S2 that detects visible light. The data obtained from the sub-pixel 110S2 can be used, for example, for eye tracking.

[0082] Furthermore, the use of the data acquired by sub-pixels 110S1 and 110S2 is not particularly limited and can be used for various processing and functions in display devices or electronic devices.

[0083] Sub-pixels 110R, 110G, 110B, and 110IR each have a light-emitting device, and sub-pixels 110S1 and 110S2 each have a light-receiving device.

[0084] As the light-emitting device, it is preferable to use, for example, an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode). Examples of light-emitting materials (also referred to as light-emitting substances) that the light-emitting device may contain include fluorescent substances (fluorescent materials), phosphorescent substances (phosphorescent materials), inorganic compounds (quantum dot materials, etc.), and thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) materials). In addition, LEDs such as microLEDs (Light Emitting Diodes) can also be used as the light-emitting device.

[0085] The light-emitting device can emit light in the following colors: infrared, red, green, blue, cyan, magenta, yellow, or white. Furthermore, the color purity can be improved by adding a microcavity structure to the light-emitting device.

[0086] For details regarding the configuration and materials of the light-emitting device, refer to Embodiment 4.

[0087] For example, a pn-type or pin-type photodiode can be used as the light-receiving device. The light-receiving device functions as a photoelectric conversion device (also called a photoelectric conversion element) that detects light incident on it and generates an electric charge. The amount of charge generated from the light-receiving device is determined by the amount of light incident on it.

[0088] The light-receiving device can detect either visible light or infrared light, or both. When detecting visible light, it can detect one or more of the following colors, for example, blue, violet, blue-violet, green, yellow-green, yellow, orange, and red. When detecting infrared light, it is preferable because it enables the detection of objects even in dark places.

[0089] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving device. Organic photodiodes can be easily made thinner, lighter, and larger in area, and because they offer a high degree of freedom in shape and design, they can be applied to various display devices.

[0090] For the configuration and materials of the light-receiving device, refer to Embodiment 5.

[0091] The pixels can display in full color using sub-pixels 110R, 110G, and 110B. The layout of sub-pixels 110R, 110G, and 110B is a so-called S-stripe arrangement. This enables high display quality.

[0092] Sub-pixel 110IR can be used as a light source, and the infrared light emitted by sub-pixel 110IR can be detected by sub-pixel 110S1. Sub-pixel 110IR may have the lowest aperture ratio among the five sub-pixels.

[0093] In Figure 1B, the aperture ratios (size, also known as the size of the light-emitting or light-receiving area) of the sub-pixels 110R, 110G, 110B, and 110S1 are shown to be equal or approximately equal, but the present invention is not limited thereto. The aperture ratios of the sub-pixels 110R, 110G, 110B, 110IR, 110S1, and 110S2 can be determined as appropriate. The aperture ratios of the sub-pixels 110R, 110G, 110B, 110IR, 110S1, and 110S2 may be different, or two or more may be equal or approximately equal.

[0094] The sub-pixel 110S1 may have a higher aperture ratio than at least one of the sub-pixels 110R, 110G, and 110B. For example, depending on the resolution of the display device and the circuit configuration of the sub-pixels, the aperture ratio of sub-pixel 110S1 may be higher than that of the other sub-pixels.

[0095] Furthermore, the aperture ratio of sub-pixel 110S1 may be lower than that of at least one of sub-pixels 110R, 110G, and 110B. A smaller light-receiving area for sub-pixel 110S1 results in a narrower imaging range, which suppresses blurring in the imaging result and improves resolution. Therefore, it is preferable to be able to perform high-definition or high-resolution imaging.

[0096] Furthermore, Figure 1B shows an example where the aperture ratio of sub-pixel 110S2 is higher than that of sub-pixel 110S1. Alternatively, the aperture ratios of sub-pixel 110S1 and sub-pixel 110S2 may be the same.

[0097] The larger light-receiving area of ​​the sub-pixel 110S2 can sometimes make object detection easier. Furthermore, if high resolution is not required for detection using the sub-pixel 110S2, a configuration in which multiple pixels share the sub-pixel 110S2 allows for a reduction in the number of transistors and simplification of the pixel layout.

[0098] As described above, for example, when using sub-pixel 110S1 to detect blinking or estimate fatigue levels of a wearable device user, it is preferable to use sub-pixel 110S1 to capture images of the user's eyes with high resolution. On the other hand, for example, when using sub-pixel 110S2 to perform eye tracking of a wearable device user, the resolution can be lower when using sub-pixel 110S2 compared to when using sub-pixel 110S1.

[0099] Thus, the sub-pixels 110S1 and 110S2 can be configured with detection wavelengths, resolutions, and aperture ratios appropriate for their respective applications. This allows the sub-pixels 110S1 and 110S2 to be used for different functions in a display device or electronic device.

[0100] Furthermore, it is preferable that the sub-pixels that emit light detected by sub-pixel 110S1 are located close to sub-pixel 110S1 within the same pixel. For example, in pixel unit 103A, it is preferable that sub-pixel 110S1 detects the light emitted by sub-pixel 110G adjacent to sub-pixel 110S1. This improves detection accuracy.

[0101] Furthermore, the aperture ratio of sub-pixel 110IR may be lower than that of at least one of sub-pixels 110R, 110G, 110B, 110S1, and 110S2. Pixel 110a shown in Figure 1B represents an example where sub-pixel 110IR has the lowest aperture ratio among the five sub-pixels. For example, since sub-pixel 110IR is used as a light source, the light-emitting device may be driven using a passive matrix drive method. This means that a transistor or similar component does not need to be provided in sub-pixel 110IR, and the size of sub-pixel 110IR can be reduced.

[0102] Figure 2A shows a top view of a display device 100 different from that shown in Figure 1A. The display device 100 shown in Figure 2A has a display unit 102 having pixel units 103A and 103B, and an external connection part 140 outside the display unit 102.

[0103] Since the pixel unit 103A shown in Figure 2A can be configured as shown in Figure 1B, a detailed explanation is omitted.

[0104] Figure 2B shows an example configuration of the pixel unit 103B. The pixel unit 103B has four pixels 110a.

[0105] In Figures 1A and 1B, there is a configuration in which two pixels 110a have one pair of pixels 105a and 105b. Alternatively, there can be a configuration in which two sub-pixels 110S1 or two sub-pixels 110IR have one sub-pixel 110S2. Furthermore, Figures 2A and 2B show an example in which three pixel units 103B have one pixel unit 103A. In other words, there is a configuration in which 14 pixels 110a have one pair of pixels 105a and 105b. Alternatively, there can be a configuration in which 14 sub-pixels 110S1 or 14 sub-pixels 110IR have one sub-pixel 110S2.

[0106] The pixel unit 103B can also be described as having a first array pattern and a second array pattern that are repeatedly arranged in the X direction. In the first array pattern, sub-pixels 110R, 110G, and 110S1 are repeatedly arranged in the Y direction in this order. In the second array pattern, sub-pixels 110B and 110IR are repeatedly arranged in the Y direction in this order.

[0107] The longitudinal direction (also called the long side direction) of sub-pixels 110R, 110G, and 110S1 is the X direction. The longitudinal direction of sub-pixel 110B is the Y direction.

[0108] The number of pixels 110a, 105a, and 105b in the display unit 102 is not particularly limited. For example, the number of pixels 105a and 105b may be the same as the number of pixels 110a, or it may be half or less of the number of pixels 110a, or it may be one-third or less of the number of pixels 110a, or it may be one-fourteenth or less of the number of pixels 110a.

[0109] In a configuration where the pixel unit 103A shown in Figure 1B is applied to the display unit 102 in Figure 1A, the number of pixels 105a and 105b is half the number of pixels 110a, each. In a configuration where the pixel unit 103A shown in Figure 3A or Figure 3B is applied to the display unit 102 in Figure 1A, the number of pixels 105a and 105b is the same as the number of pixels 110a, each. In a configuration where the pixel unit 103A shown in Figure 1B and the pixel unit 103B shown in Figure 2B are applied to the display unit 102 in Figure 2A, the number of pixels 105a and 105b is 1 / 14 the number of pixels 110a, each. For example, the number of pixels 105a and 105b can be determined according to the required resolution for imaging using sub-pixels 110S2.

[0110] Furthermore, the number of sub-pixels 110S1, 110S2, and 110IR in the display unit 102 may be different, or two or more of them may be the same number.

[0111] Furthermore, Figures 3A and 3B show modified examples of the pixel unit 103A.

[0112] The pixel unit 103A shown in Figure 3A has one each of pixels 110b, 110c, 105a, and 105b. Since pixels 105a and 105b have the same configuration as shown in Figure 1B, their explanation is omitted.

[0113] Pixel 110b is composed of four sub-pixels: sub-pixels 110R, 110G, 110B, and 110S1.

[0114] Pixel 110b is composed of 3 rows and 2 columns. Pixel 110b has sub-pixel 110R in the first row, sub-pixel 110G in the second row, and sub-pixel 110B spanning these two rows. It also has sub-pixel 110S1 in the third row.

[0115] Pixel 110c is composed of four sub-pixels: sub-pixels 110R, 110G, 110B, and 110IR.

[0116] Pixel 110c is composed of 3 rows and 2 columns. Pixel 110c has sub-pixel 110R in the first row, sub-pixel 110G in the second row, and sub-pixel 110B spanning these two rows. Additionally, sub-pixel 110IR is present in the third row.

[0117] The pixel unit 103A shown in Figure 3B has one each of pixels 110b, 110d, 105c, and 105d. Since the configuration of pixel 110b is the same as shown in Figure 3A, its description is omitted.

[0118] Pixel 110d is composed of four sub-pixels: sub-pixels 110R, 110G, 110B, and 110S2.

[0119] Pixel 110d is composed of 3 rows and 2 columns. Pixel 110d has sub-pixel 110R in the first row, sub-pixel 110G in the second row, and sub-pixel 110B spanning these two rows. It also has sub-pixel 110S2 in the third row.

[0120] Figure 3B shows an example where pixels 105c and 105d are each composed of 3 rows and 2 columns. Pixels 105c and 105d each have a sub-pixel 110R in the first row, a sub-pixel 110G in the second row, and a sub-pixel 110B spanning these two rows. Furthermore, pixels 105c and 105d share one sub-pixel 110IR in the third row.

[0121] Figures 1B and 3A show an example where the subpixel shared by two pixels is subpixel 110S2, but this is not the only example. As shown in Figure 3B, the two pixels may share subpixel 110IR. Alternatively, the two pixels may share subpixel 110S1.

[0122] The pixel unit 103A shown in Figure 1B has a configuration in which each of the two sub-pixels 110IR and sub-pixel 110S1 has one sub-pixel 110S2. The pixel unit 103A shown in Figures 3A and 3B has a configuration in which the number of sub-pixels 110S1, sub-pixel 110S2, and sub-pixel 110IR are the same.

[0123] The pixel unit 103A shown in Figure 1B can achieve a higher resolution of the subpixels 110S1 compared to the pixel units 103A shown in Figures 3A and 3B. In the pixel unit 103A shown in Figure 1B, there are up to five subpixels per pixel, whereas in the pixel units 103A shown in Figures 3A and 3B, there are up to four subpixels per pixel. Therefore, in Figures 3A and 3B, the aperture ratio of a single subpixel may be higher than in Figure 1B, and design and manufacturing may also be easier.

[0124] Figures 4A to 4E show other configuration examples of the pixel 110.

[0125] Each pixel 110 shown in Figures 4A to 4E is composed of five subpixels: subpixels 110R, 110G, 110B, 110IR, and 110S1.

[0126] Pixel 110 shown in Figure 4A is configured in the same way as pixel 110a shown in Figure 1B, but with the positions of sub-pixels 110R and 110G swapped.

[0127] Pixel 110, shown in Figure 4A, has sub-pixel 110G in the first row, sub-pixel 110R in the second row, and sub-pixel 110B spanning these two rows. It also has two sub-pixels (sub-pixels 110IR and 110S1) in the third row. In other words, pixel 110 has three sub-pixels (sub-pixels 110G, 110R, and 110S1) in the left column (first column) and two sub-pixels (sub-pixels 110B and 110IR) in the right column (second column).

[0128] Pixel 110 shown in Figure 4B is configured in the same way as pixel 110a shown in Figure 1B, but with the positions of sub-pixel 110S1 and sub-pixel 110IR swapped.

[0129] Pixel 110, shown in Figure 4B, has sub-pixel 110R in the first row, sub-pixel 110G in the second row, and sub-pixel 110B spanning these two rows. It also has two sub-pixels (sub-pixels 110IR and 110S1) in the third row. In other words, pixel 110 has three sub-pixels (sub-pixels 110R, 110G, and 110IR) in the left column (first column) and two sub-pixels (sub-pixels 110B and 110S1) in the right column (second column).

[0130] Pixel 110 shown in Figure 4C is a configuration in which the aperture ratio of sub-pixel 110S1 is higher than that of sub-pixels 110R and 110G in pixel 110a shown in Figure 1B.

[0131] Pixel 110, shown in Figure 4C, has sub-pixel 110R in the first row, sub-pixel 110G in the second row, and sub-pixel 110B spanning these two rows. It also has two sub-pixels (sub-pixels 110IR and 110S1) in the third row. In other words, pixel 110 has three sub-pixels (sub-pixels 110R, 110G, and 110S1) in the left column (first column) and two sub-pixels (sub-pixels 110B and 110IR) in the right column (second column).

[0132] In Figure 4C, the aperture ratio of sub-pixel 110B and sub-pixel 110IR of pixel 110 are equal or approximately equal. Also in Figure 4C, the aperture ratio of sub-pixel 110S1 is higher than that of sub-pixels 110R and 110G. In the pixel 110 shown in Figure 4C, sub-pixel 110S1 has the highest aperture ratio among sub-pixels 110R, 110G, 110B, 110IR, and 110S1.

[0133] Figures 4D and 4E show an example where a single pixel 110 is composed of two rows and three columns. Pixel 110 has three subpixels (subpixels 110R, 110G, and 110B) in the first row, and two subpixels (subpixels 110IR and 110S1) in the second row. In other words, pixel 110 has subpixel 110R in the left column (column 1), subpixel 110G in the middle column (column 2), and subpixel 110S1 spanning from the left column to the middle column. It also has two subpixels (subpixels 110B and 110IR) in the right column (column 3).

[0134] The pixels can display in full color using sub-pixels 110R, 110G, and 110B. In the pixel 110 shown in Figures 4D and 4E, the layout of sub-pixels 110R, 110G, and 110B is a so-called stripe arrangement. This enables high display quality.

[0135] The sub-pixel 110IR can be used as a light source, and the sub-pixel 110S1 can detect the infrared light emitted by the sub-pixel 110IR.

[0136] In Figure 4D, pixel 110 has sub-pixels 110R, 110G, 110B, and 110S1, all of which have equal or approximately equal aperture ratios. Furthermore, among sub-pixels 110R, 110G, 110B, 110IR, and 110S1, sub-pixel 110IR has the lowest aperture ratio.

[0137] In Figure 4E, pixel 110 has sub-pixels 110R, 110G, 110B, and 110IR, all of which have equal or approximately equal aperture ratios. Furthermore, among sub-pixels 110R, 110G, 110B, 110IR, and 110S1, sub-pixel 110S1 has the highest aperture ratio.

[0138] When applying the configuration shown in Figure 4D or Figure 4E as pixel 110, it is preferable to use pixels 105e and 105f shown in Figure 4F as a pair of pixels that share subpixels. This allows the layout of subpixels 110R, 110G, and 110B in each pixel to be a stripe arrangement.

[0139] Figure 4F shows an example where pixels 105e and 105f are each composed of 2 rows and 3 columns. Pixels 105e and 105f each have three subpixels (subpixels 110R, 110G, and 110B) in the first row, and share one subpixel 110S2 in the second row.

[0140] Furthermore, the display device according to one aspect of the present invention is not limited to a configuration in which two pixels share one sub-pixel, but may also have three or more pixels sharing one sub-pixel. Figure 4G shows an example in which three pixels, pixels 105a, 105b, and 105g, share one sub-pixel 110S2. Similarly, four, five, or six pixels may share one sub-pixel.

[0141] [Example of cross-sectional structure] Figures 5 to 13 show an example of a cross-sectional view of a display device according to one embodiment of the present invention.

[0142] Figure 5A shows a cross-sectional view between the dashed lines X1 and X2 in Figure 1B, Figure 5B shows a cross-sectional view between the dashed lines X3 and X4 in Figure 1B, and Figure 5C shows a cross-sectional view between the dashed lines X5 and X6 in Figure 1B. Figures 6A and 6B show a cross-sectional view between the dashed lines Y1 and Y2 in Figure 1A.

[0143] The display device shown in Figures 5A to 5C has a sub-pixel 110R that emits red light, a sub-pixel 110G that emits green light, a sub-pixel 110S1 that detects infrared light, a sub-pixel 110B that emits blue light, a sub-pixel 110IR that emits infrared light, and a sub-pixel 110S2 that detects visible light.

[0144] A display device according to one aspect of the present invention may be a top-emission type that emits light in the direction opposite to the substrate on which the light-emitting device is formed, a bottom-emission type that emits light toward the substrate on which the light-emitting device is formed, or a dual-emission type that emits light on both sides. In this embodiment, a top-emission type display device will be mainly described as an example.

[0145] The sub-pixel 110R includes a light-emitting device 130R and a colored layer 132R that transmits red light. As a result, the light emitted from the light-emitting device 130R is extracted as red light to the outside of the display device via the colored layer 132R.

[0146] Similarly, the sub-pixel 110G includes a light-emitting device 130G and a colored layer 132G that transmits green light. As a result, the light emitted from the light-emitting device 130G is extracted as green light to the outside of the display device via the colored layer 132G.

[0147] Furthermore, the sub-pixel 110B includes a light-emitting device 130B and a colored layer 132B that transmits blue light. As a result, the light emitted from the light-emitting device 130B is extracted as blue light to the outside of the display device via the colored layer 132B.

[0148] Full-color display can be achieved using sub-pixels 110R, 110G, and 110B.

[0149] The sub-pixel 110IR has a light-emitting device 130IR that emits infrared light. Therefore, the light emitted by the light-emitting device 130IR can be extracted as infrared light to the outside of the display device without passing through the colored layer.

[0150] Here, the wavelength of the infrared light can be 750 nm or higher, and preferably 780 nm or higher. It is particularly preferable to use near-infrared light with a wavelength of 750 nm to 2500 nm as the infrared light. The light-emitting device 130IR preferably has an emission peak in the range of 750 nm to 2500 nm.

[0151] The sub-pixel 110S1 includes a light-receiving device 150a and a colored layer 132V that transmits infrared light. The sub-pixel 110S1 detects infrared light. Light Lin is incident on the light-receiving device 150a from outside the display device via the substrate 120, resin layer 122, and protective layer 131.

[0152] The colored layer 132V functions as a visible light cut filter. Figure 5A shows an example in which the colored layer 132V is formed by laminating colored layer 132G and colored layer 132R. The colored layer 132V is not particularly limited as long as it blocks visible light and transmits infrared light. For example, forming it by laminating two or more of the colored layers 132R, 132G, and 132B is preferable because it reduces the number of steps compared to forming the colored layer 132V separately.

[0153] The sub-pixel 110S1 is particularly preferred to detect infrared light emitted by sub-pixel 110IR. For example, while displaying an image using sub-pixels 110R, 110G, and 110B, the sub-pixel 110IR can be used as a light source, and the reflected light emitted by the light source can be detected by sub-pixel 110S1.

[0154] The sub-pixel 110S2 has a light-receiving device 150b. The sub-pixel 110S2 detects visible light. Light Lin is incident on the light-receiving device 150b from outside the display device via the substrate 120, resin layer 122, and protective layer 131.

[0155] The sub-pixel 110S2 preferably detects light in at least a portion of the wavelength range of the light emitted by sub-pixels 110R, 110G, and 110B. The sub-pixel 110S2 may also have a colored layer.

[0156] In one aspect of the present invention, an organic EL device is used as the light-emitting device, and an organic photodiode is used as the light-receiving device. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated into a display device using an organic EL device.

[0157] Of the pair of electrodes each of the light-emitting device and the light-receiving device has, one electrode functions as the anode and the other electrode functions as the cathode.

[0158] A light-receiving device can detect light incident on it, generate an electric charge, and extract it as an electric current by driving it with a reverse bias applied between the pixel electrode and the common electrode.

[0159] Because organic photodiodes have many layers that can share a common structure with organic EL devices, the number of deposition steps can be suppressed by depositing these common layers in a single process.

[0160] For example, one of a pair of electrodes (the common electrode) can be a common layer for both the photodetector and the light-emitting device. Furthermore, it is preferable that at least one of the hole injection layer, hole transport layer, hole blocking layer, electron blocking layer, electron transport layer, and electron injection layer be a common layer for both the photodetector and the light-emitting device.

[0161] In one embodiment of the present invention, there may be a layer shared by both the light-receiving device and the light-emitting device (which can also be described as a continuous layer shared by both the light-receiving device and the light-emitting device). The function of such a layer may differ between the light-emitting device and the light-receiving device. In this specification, components may be referred to based on their function in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device. Furthermore, a layer shared by both the light-receiving device and the light-emitting device may have the same function in both the light-emitting device and the light-receiving device. A hole transport layer functions as a hole transport layer in both the light-emitting device and the light-receiving device, and an electron transport layer functions as an electron transport layer in both the light-emitting device and the light-receiving device.

[0162] Light-emitting device 130R has a pixel electrode 111a, a first layer 113a, a common layer 114, and a common electrode 115. Light-emitting device 130G has a pixel electrode 111b, a first layer 113a, a common layer 114, and a common electrode 115. Light-emitting device 130B has a pixel electrode 111c, a first layer 113a, a common layer 114, and a common electrode 115. Light-receiving device 150a has a pixel electrode 111d, a second layer 113b, a common layer 114, and a common electrode 115. Light-emitting device 130IR has a pixel electrode 111e, a third layer 113c, a common layer 114, and a common electrode 115. Furthermore, the light-receiving device 150b has a pixel electrode 111f, a second layer 113b, a common layer 114, and a common electrode 115.

[0163] In this specification, among the EL layers of a light-emitting device, layers provided in an island-like manner for each light-emitting device are referred to as the first layer 113a or the third layer 113c, and layers shared by multiple light-emitting devices are referred to as the common layer 114.

[0164] The configurations shown in Figures 5A to 5C are examples in which subpixels exhibiting R, G, and B light all use light-emitting devices with the same EL layer configuration, while subpixels exhibiting IR light use light-emitting devices that emit infrared light.

[0165] The light-emitting devices 130R, 130G, and 130B all have a first layer 113a, and these first layers 113a are spaced apart from each other.

[0166] By making the EL layer configuration the same in the light-emitting devices 130R, 130G, and 130B, the manufacturing process for the display device can be reduced, enabling a reduction in manufacturing costs and an improvement in manufacturing yield.

[0167] The light-emitting device of this embodiment may be a single structure (a structure having only one light-emitting unit) or a tandem structure (a structure having multiple light-emitting units). The light-emitting unit has at least one light-emitting layer.

[0168] The first layer 113a and the third layer 113c each have at least an emissive layer. Furthermore, the first layer 113a and the third layer 113c may also have one or more of the following: a hole injection layer, a hole transport layer, a hole blocking layer, a charge generation layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0169] The light-emitting devices 130R, 130G, and 130B have a first layer 113a.

[0170] For example, the first layer 113a may have a light-emitting material that emits blue light and a light-emitting material that emits visible light with a longer wavelength than blue. For example, the first layer 113a may have a configuration having a light-emitting material that emits blue light and a light-emitting material that emits yellow light, or a configuration having a light-emitting material that emits blue light, a light-emitting material that emits green light and a light-emitting material that emits red light.

[0171] As light-emitting devices 130R, 130G, and 130B, for example, a single-structure light-emitting device having two light-emitting layers, one emitting yellow (Y) light and one emitting blue (B) light, or a single-structure light-emitting device having three light-emitting layers, one emitting red (R) light, one emitting green (G) light, and one emitting blue light. For example, the number of layers and the order of colors of the light-emitting layers can be a three-layer structure of R, G, B from the anode side, or a three-layer structure of R, B, G. In addition, another layer (also called a buffer layer) may be provided between the two light-emitting layers. The buffer layer can be formed using a material that can be used for hole transport layers or electron transport layers, for example.

[0172] Furthermore, when using a tandem light-emitting device, a two-stage tandem structure having a light-emitting unit that emits yellow light and a light-emitting unit that emits blue light, a two-stage tandem structure having a light-emitting unit that emits red and green light and a light-emitting unit that emits blue light, or a three-stage tandem structure having a light-emitting unit that emits blue light, a light-emitting unit that emits yellow, yellow-green, or green light and red light, and a light-emitting unit that emits blue light in that order can be applied. For example, the number of layers and the order of colors of the light-emitting units can be a two-stage structure of B, Y from the anode side, a two-stage structure of B, X, a three-stage structure of B, Y, B, or a three-stage structure of B, X, B. The number of layers and the order of colors of the light-emitting layers in light-emitting unit X can be a two-layer structure of R, Y, a two-layer structure of R, G, a two-layer structure of G, R, G, a three-layer structure of G, R, G, or a three-layer structure of R, G, R, etc., from the anode side. Furthermore, another layer may be provided between the two light-emitting layers.

[0173] The light-emitting device 130IR has a third layer 113c. The third layer 113c has a light-emitting material that emits infrared light.

[0174] As the light-emitting device 130IR, for example, a single-structure light-emitting device that emits infrared light, or a tandem-structure light-emitting device having two or more light-emitting units that emit infrared light can be used.

[0175] When creating different light-emitting devices using subpixels that emit R, G, and B light and subpixels that emit IR light, the light-emitting device 130IR can be configured to primarily emit infrared light. In other words, the light-emitting device 130IR can be configured to emit very little or no visible light. Therefore, it is not necessary to provide a filter to block visible light in the subpixel 110IR.

[0176] When using a tandem light-emitting device, the first layer 113a or the third layer 113c has multiple light-emitting units. It is preferable to provide a charge generation layer between each light-emitting unit.

[0177] The light-emitting unit has at least one light-emitting layer. For example, if the light emitted by multiple light-emitting units is complementary in color, the light-emitting device can emit white light. The light-emitting unit may also have one or more of the following: a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0178] Furthermore, by applying a microcavity structure, a light-emitting device configured to emit white light may also emit light of specific wavelengths, such as red, green, blue, or infrared light, with enhanced emission.

[0179] For example, the first layer 113a and the third layer 113c may each have a hole injection layer, a hole transport layer, an emissive layer, and an electron transport layer in that order. Alternatively, an electron blocking layer may be present between the hole transport layer and the emissive layer. Furthermore, an electron injection layer may be present on the electron transport layer.

[0180] Furthermore, for example, the first layer 113a and the third layer 113c may each have an electron injection layer, an electron transport layer, an emissive layer, and a hole transport layer in that order. A hole blocking layer may also be present between the electron transport layer and the emissive layer. Additionally, a hole injection layer may be present on the hole transport layer.

[0181] Preferably, the first layer 113a and the third layer 113c each have an emissive layer and a carrier transport layer (electron transport layer or hole transport layer) on the emissive layer. Since the surfaces of the first layer 113a and the third layer 113c are exposed during the manufacturing process of the display device, providing the carrier transport layer on the emissive layer suppresses exposure of the emissive layer to the outermost surface and reduces damage to the emissive layer. This improves the reliability of the light-emitting device.

[0182] The configurations shown in Figures 5A and 5C are examples of using a photodetector that has a layer (second layer 113b) with the same configuration for both the subpixel that detects infrared light and the subpixel that detects visible light.

[0183] By using the second layer 113b in both the light-receiving devices 150a and 150b, the manufacturing process for the display device can be reduced, enabling a reduction in manufacturing costs and an improvement in manufacturing yield.

[0184] It is preferable that the light-receiving devices 150a and 150b detect both visible light and infrared light. In the sub-pixel 110S1, since a colored layer 132V is used, visible light is cut off and only infrared light is incident on the light-receiving device 150a. In the sub-pixel 110S2, since there is no colored layer, it is configured so that both visible light and infrared light can be incident on the light-receiving device 150b. In light detection using the sub-pixel 110S2, if infrared light is not required, it is sufficient not to emit infrared light with the sub-pixel 110IR, and only visible light can be incident on the light-receiving device 150b even without providing a colored layer in the sub-pixel 110S2.

[0185] The second layer 113b has at least an active layer. The second layer 113b of the photodetector devices 150a and 150b can be fabricated independently of the first layer 113a and the third layer 113c of the light-emitting device, thus providing a wide range of materials that can be used. In addition, various materials that can be used for the first layer 113a and the third layer 113c may be used for the second layer 113b. The second layer 113b may have one or more of the hole injection layer, hole transport layer, hole blocking layer, charge generation layer, electron blocking layer, electron transport layer, and electron injection layer that can be used for the first layer 113a and the third layer 113c.

[0186] The common layer 114 may have, for example, an electron injection layer or a hole injection layer. Alternatively, the common layer 114 may have an electron transport layer and an electron injection layer stacked together, or a hole transport layer and a hole injection layer stacked together. The common layer 114 is shared by the light-emitting devices 130R, 130G, 130B, 130IR and the light-receiving devices 150a, 150b.

[0187] It is preferable that the ends of the pixel electrodes have a tapered shape. When the ends of the pixel electrodes have a tapered shape, the first layer 113a, the second layer 113b, and the third layer 113c provided along the side surface of the pixel electrodes also have a tapered shape. By making the side surface of the pixel electrodes tapered, the coverage of the first layer 113a, the second layer 113b, and the third layer 113c provided along the side surface of the pixel electrodes can be improved. Furthermore, making the side surface of the pixel electrodes tapered makes it easier to remove foreign matter (for example, dust or particles) during the manufacturing process by washing or other processes, which is preferable.

[0188] In this specification, a tapered shape refers to a shape in which at least a portion of the side surface of a structure is inclined with respect to the substrate surface or the surface to be formed. For example, it is preferable to have a region in which the angle (also called the taper angle) between the inclined side surface and the substrate surface or the surface to be formed is less than 90°.

[0189] In Figure 5A, etc., the spaces between the pixel electrode 111a and the first layer 113a, between the pixel electrode 111b and the first layer 113a, and between the pixel electrode 111d and the second layer 113b are not covered by an insulating layer. Therefore, the spacing between adjacent light-emitting devices, and between adjacent light-emitting devices and light-receiving devices can be made extremely narrow. Consequently, a high-definition or high-resolution display device can be made. In addition, a mask for forming the insulating layer is not required, which can reduce the manufacturing cost of the display device.

[0190] Furthermore, by not providing an insulating layer covering the edges of the pixel electrodes between the pixel electrodes and the EL layer, in other words, by not providing an insulating layer between the pixel electrodes and the EL layer, the light emitted from the EL layer can be efficiently extracted. Therefore, a display device according to one aspect of the present invention can have extremely low viewing angle dependence. By reducing viewing angle dependence, the visibility of images in the display device can be improved. For example, in a display device according to one aspect of the present invention, the viewing angle (the maximum angle at which a constant contrast ratio is maintained when viewing the screen from an oblique direction) can be set to a range of 100° or more and less than 180°, preferably 150° or more and 170° or less. The above viewing angle can be applied to both vertical and horizontal directions.

[0191] Furthermore, the common electrode 115 is shared by the light-emitting devices 130R, 130G, 130B, 130IR, and the light-receiving devices 150a, 150b. The common electrode 115, which is shared by multiple light-emitting and light-receiving devices, is electrically connected to a conductive layer 123 provided at the connection portion 140 (see Figures 6A and 6B). It is preferable to use a conductive layer for the conductive layer 123 that is made of the same material and formed using the same process as the pixel electrode.

[0192] In Figure 6A, a common layer 114 is provided on the conductive layer 123, and the conductive layer 123 and the common electrode 115 are electrically connected via the common layer 114. Also, as shown in Figure 6B, the common layer 114 does not need to be provided at the connection part 140. In Figure 6B, the conductive layer 123 and the common electrode 115 are directly connected. For example, by using a mask to define the film deposition area (also called an area mask or rough metal mask to distinguish it from a fine metal mask), the areas to be deposited by the common layer 114 and the common electrode 115 can be changed.

[0193] Figure 7A shows a cross-sectional view between the dashed lines X1 and X2 in Figure 5B, Figure 7B shows a cross-sectional view between the dashed lines X3 and X4 in Figure 5B, and Figure 7C shows a cross-sectional view between the dashed lines X5 and X6 in Figure 5B.

[0194] The cross-sectional structure shown in Figure 7A is the same as that in Figure 5A. The cross-sectional structure shown in Figure 7B differs from Figure 5B in that the light-emitting device 130IR does not have a third layer 113c but has a first layer 113a, and a coloring layer 132V is provided on the sub-pixel 110IR. The cross-sectional structure shown in Figure 7C is the same as that in Figure 5C.

[0195] The configurations shown in Figures 7A and 7B are examples of cases where light-emitting devices with identical EL layers are used for subpixels that emit R, G, B, and IR light.

[0196] By making the EL layer configuration the same for light-emitting devices 130R, 130G, 130B, and 130IR, the manufacturing process for display devices can be reduced, enabling lower manufacturing costs and improved manufacturing yield.

[0197] Regarding the configuration of sub-pixels 110R, 110G, 110B, 110S1, and 110S2, detailed explanations are omitted for parts that are the same as those in Figures 5A and 5B.

[0198] The sub-pixel 110IR includes a light-emitting device 130IR and a colored layer 132V that transmits infrared light. As a result, the light emitted from the light-emitting device 130IR is extracted as infrared light to the outside of the display device via the colored layer 132V.

[0199] The colored layer 132V can have the same configuration for sub-pixel 110S1 and sub-pixel IR.

[0200] For example, the first layer 113a may have a light-emitting material that emits blue light, a light-emitting material that emits visible light with a longer wavelength than blue, and a light-emitting material that emits infrared light. For example, the first layer 113a may have a configuration having a light-emitting material that emits blue light, a light-emitting material that emits yellow light, and a light-emitting material that emits infrared light, or a configuration having a light-emitting material that emits blue light, a light-emitting material that emits green light, a light-emitting material that emits red light, and a light-emitting material that emits infrared light.

[0201] As light-emitting devices 130R, 130G, 130B, and 130IR, for example, a single-structure light-emitting device having three light-emitting layers: a yellow (Y) light-emitting layer, a blue (B) light-emitting layer, and an infrared (IR) light-emitting layer, or a single-structure light-emitting device having four light-emitting layers: a red (R) light-emitting layer, a green (G) light-emitting layer, a blue light-emitting layer, and an infrared light-emitting layer. For example, the number of layers and the order of colors can be a four-layer structure of IR, R, G, B from the anode side, or a four-layer structure of IR, R, B, G. In addition, other layers may be provided between two light-emitting layers.

[0202] Furthermore, when using a tandem light-emitting device, a two-stage tandem structure having a light-emitting unit that emits infrared and yellow light and a light-emitting unit that emits blue light, a three-stage tandem structure having a light-emitting unit that emits infrared light, a light-emitting unit that emits yellow light and a light-emitting unit that emits blue light, a two-stage tandem structure having a light-emitting unit that emits infrared light, red and green light and a light-emitting unit that emits blue light, a three-stage tandem structure having a light-emitting unit that emits infrared light, a light-emitting unit that emits red and green light and a light-emitting unit that emits blue light, or a three-stage tandem structure having a light-emitting unit that emits blue light, a light-emitting unit that emits yellow, yellow-green, or green light, red light, infrared light and a light-emitting unit that emits blue light in that order can be applied. For example, in the above-described example of the number of layers and color order of the tandem structure light-emitting units, it is possible to further apply a configuration in which an IR light-emitting unit is added, or a configuration in which a light-emitting layer that emits IR light is added to the light-emitting unit X.

[0203] Figure 8A shows a cross-sectional view between the dashed lines X1 and X2 in Figure 5B, Figure 8B shows a cross-sectional view between the dashed lines X3 and X4 in Figure 5B, and Figure 8C shows a cross-sectional view between the dashed lines X5 and X6 in Figure 5B.

[0204] The cross-sectional structure shown in Figure 8A differs from that in Figure 7A in that the sub-pixel 110S1 does not have a colored layer 132V. The cross-sectional structure shown in Figure 8B is the same as that in Figure 7B. The cross-sectional structure shown in Figure 8C differs from that in Figure 7C in that the sub-pixel 110S2 does not have a second layer 113b, but has a fourth layer 113d.

[0205] The configurations shown in Figures 8A and 8C are examples of cases where different light-receiving devices are used for sub-pixels 110S1 and 110S2.

[0206] Regarding the configuration of sub-pixels 110R, 110G, 110B, and 110IR, detailed explanations are omitted for parts that are the same as those in Figures 7A and 7B.

[0207] In the sub-pixel 110S1, infrared light can be detected using a photodetector 150a having a second layer 113b.

[0208] In the sub-pixel 110S2, visible light can be detected using a light-receiving device 150b having a fourth layer 113d.

[0209] By differentiating the second layer 113b and the fourth layer 113d, the light-receiving device 150a is configured to detect infrared light, and the light-receiving device 150b is configured to detect visible light. Therefore, in Figures 8A and 8C, it is not necessary to provide a colored layer in both the sub-pixels 110S1 and 110S2.

[0210] As shown in Figures 5A and 5B, the display device has an insulating layer on a layer 101 containing transistors, a light-emitting device and a light-receiving device on the insulating layer, and a protective layer 131 covering these light-emitting and light-receiving devices. Colored layers 132R, 132G, and 132B are provided on the protective layer 131, and the substrate 120 is bonded to it by a resin layer 122. In addition, an insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided in the region between adjacent light-emitting devices and in the region between a light-emitting device and a light-receiving device.

[0211] In Figures 5A and 5B, etc., multiple cross-sections of the insulating layer 125 and insulating layer 127 are shown, but when the display device is viewed from above, the insulating layer 125 and insulating layer 127 are connected as one unit each. In other words, the display device can be configured to have, for example, one insulating layer 125 and one insulating layer 127. The display device may also have multiple insulating layers 125 that are separated from each other, or multiple insulating layers 127 that are separated from each other.

[0212] The layer 101 containing the transistors can, for example, be a laminated structure in which multiple transistors are provided on a substrate and insulating layers are provided to cover these transistors. The insulating layers on the transistors may be a single layer or a laminated structure. In Figure 5A, etc., insulating layer 255a, insulating layer 255b on insulating layer 255a, and insulating layer 255c on insulating layer 255b are shown among the insulating layers on the transistors. These insulating layers may have recesses between adjacent light-emitting devices and between light-emitting devices and light-receiving devices. In Figure 5A, etc., an example is shown in which a recess is provided in insulating layer 255c. Note that the insulating layers on the transistors (insulating layers 255a to insulating layers 255c) may also be considered as part of the layer 101 containing the transistors.

[0213] Various inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride-oxide insulating films can be suitably used as insulating layers 255a, 255b, and 255c, respectively. For insulating layers 255a and 255c, it is preferable to use oxide insulating films or oxidative nitride insulating films such as silicon oxide films, silicon oxidative nitride films, and aluminum oxide films, respectively. For insulating layer 255b, it is preferable to use nitride insulating films or nitride-oxide insulating films such as silicon nitride films and silicon nitride-oxide films. More specifically, it is preferable to use silicon oxide films as insulating layers 255a and 255c, and silicon nitride films as insulating layer 255b. It is preferable that insulating layer 255b has the function of an etching protective film.

[0214] In this specification, "oxide nitride" refers to a material in which the oxygen content is greater than the nitrogen content, and "nitride oxide" refers to a material in which the nitrogen content is greater than the oxygen content. For example, when "silicon oxynitride" is written, it refers to a material in which the oxygen content is greater than the nitrogen content, and when "silicon nitride oxide" is written, it refers to a material in which the nitrogen content is greater than the oxygen content.

[0215] Examples of the configuration of layer 101 including the transistor will be described later in Embodiments 3 and 4.

[0216] It is preferable to have a protective layer 131 on the light-emitting device and the light-receiving device. Providing the protective layer 131 can improve the reliability of the light-emitting device and the light-receiving device. The protective layer 131 may be a single layer or a laminated structure of two or more layers.

[0217] The conductivity of the protective layer 131 is not required. The protective layer 131 can be at least one of an insulating film, a semiconductor film, and a conductive film.

[0218] The presence of an inorganic film in the protective layer 131 prevents oxidation of the common electrode 115, suppresses the intrusion of impurities (such as moisture and oxygen) into the light-emitting device and light-receiving device, thereby suppressing degradation of the light-emitting device and improving the reliability of the display device.

[0219] For the protective layer 131, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films can be used. Examples of oxide insulating films include silicon oxide films, aluminum oxide films, magnesium oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, neodymium oxide films, hafnium oxide films, and tantalum oxide films. Examples of nitride insulating films include silicon nitride films and aluminum nitride films. Examples of oxidative nitride insulating films include silicon oxidative nitride films and aluminum oxidative nitride films. Examples of nitride oxide insulating films include silicon nitride films and aluminum nitride films.

[0220] In particular, the protective layer 131 preferably has a nitride insulating film or a nitride oxide insulating film, and more preferably has a nitride insulating film.

[0221] Furthermore, the protective layer 131 may also be an inorganic film containing In-Sn oxide (also known as ITO), In-Zn oxide, Ga-Zn oxide, Al-Zn oxide, or indium gallium zinc oxide (In-Ga-Zn oxide, also known as IGZO). The inorganic film is preferably highly resistive, and more specifically, it is preferably more resistive than the common electrode 115. The inorganic film may further contain nitrogen.

[0222] When the light emitted from a light-emitting device is extracted via a protective layer 131, it is preferable that the protective layer 131 has high transmittance to visible light. For example, ITO, IGZO, and aluminum oxide are preferred because they are inorganic materials with high transmittance to visible light.

[0223] As the protective layer 131, for example, a laminated structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a laminated structure of an aluminum oxide film and an IGZO film on the aluminum oxide film can be used. By using such a laminated structure, it is possible to suppress the penetration of impurities (water, oxygen, etc.) into the EL layer.

[0224] Furthermore, the protective layer 131 may have an organic film. For example, the protective layer 131 may have both an organic film and an inorganic film.

[0225] The protective layer 131 may have a two-layer structure formed using different film deposition methods. Specifically, the first layer of the protective layer 131 may be formed using atomic layer deposition (ALD), and the second layer of the protective layer 131 may be formed using sputtering.

[0226] The sides of the first layer 113a, the second layer 113b, and the third layer 113c are covered by insulating layers 125 and 127. This prevents the common layer 114 (or common electrode 115) from coming into contact with the pixel electrode, the first layer 113a, the second layer 113b, and the third layer 113c, respectively, thereby suppressing short circuits in the light-emitting device and the light-receiving device. This improves the reliability of the light-emitting device and the light-receiving device.

[0227] The insulating layer 125 can be configured to be in contact with the respective sides of the first layer 113a, the second layer 113b, and the third layer 113c. By configuring the insulating layer 125 or insulating layer 127 to be in contact with the first layer 113a, the second layer 113b, and the third layer 113c, peeling of the first layer 113a, the second layer 113b, and the third layer 113c can be prevented. The close contact between the insulating layer and the first layer 113a, the second layer 113b, or the third layer 113c provides the effect of fixing or bonding adjacent first layers 113a, etc., to the insulating layer. This can improve the reliability of the light-emitting device and the light-receiving device. It can also improve the manufacturing yield of the light-emitting device and the light-receiving device.

[0228] Figures 5A and 5B, etc., show a configuration in which the end of the pixel electrode is covered by the first layer 113a, the second layer 113b, or the third layer 113c, and the insulating layer 125 is in contact with the sides of the first layer 113a, the second layer 113b, and the third layer 113c.

[0229] The insulating layer 127 is provided on the insulating layer 125 so as to fill the recesses of the insulating layer 125. The insulating layer 127 can be configured to overlap (or cover) the sides of the first layer 113a, the second layer 113b, and the third layer 113c via the insulating layer 125. The insulating layer 127 may also overlap the sides of the pixel electrodes via the insulating layer 125.

[0230] By providing insulating layers 125 and 127, the gaps between adjacent island-shaped layers can be filled, thereby reducing the unevenness of the surface on which layers (e.g., carrier injection layers and common electrodes) are formed on the island-shaped layers, making them flatter. Consequently, the coverage of the carrier injection layers and common electrodes can be improved, and step breaks in the common electrodes can be prevented. In this specification, step breaks refer to the phenomenon in which a layer, film, or electrode is divided due to the shape of the surface on which it is formed (e.g., steps).

[0231] The common layer 114 and common electrode 115 are provided on the first layer 113a, the second layer 113b, the third layer 113c, the insulating layer 125, and the insulating layer 127. Before the insulating layer 125 and the insulating layer 127 are provided, a step difference occurs due to the region where the pixel electrode and the first layer 113a, the second layer 113b, or the third layer 113c are provided, and the region where these are not provided (regions between light-emitting devices, regions between light-receiving devices, and regions between light-emitting devices and light-receiving devices). In one embodiment of the present invention, the presence of the insulating layer 125 and the insulating layer 127 can flatten this step difference and improve the coverage of the common layer 114 and the common electrode 115. Therefore, connection failures due to step breaks in the common electrode 115 can be suppressed. In addition, it is possible to suppress the local thinning of the common electrode 115 due to the step difference, which would increase its electrical resistance.

[0232] Various shapes can be applied to the insulating layer 125 and the insulating layer 127. In order to improve the flatness of the surface on which the common layer 114 and the common electrode 115 are formed, it is preferable that the height of the upper surface of the insulating layer 125 and the upper surface of the insulating layer 127 match or approximately match the height of the upper surface at the respective ends of the first layer 113a, the second layer 113b, and the third layer 113c (which can also be called the height of the end of the upper surface). Furthermore, the upper surface of the insulating layer 127 may have a flat shape, or it may have convex portions, convex curved surfaces, concave curved surfaces, or recesses.

[0233] Furthermore, in Figures 5A and 5B, the mask layer 118a is located on the first layer 113a, the mask layer 118b is located on the second layer 113b, and the mask layer 118c is located on the third layer 113c. Also, in Figure 8C, the mask layer 118d is located on the fourth layer 113d. In Figure 5A, one end of the mask layer 118a is aligned with or approximately aligned with the end of the first layer 113a, and the other end of the mask layer 118a is located on the first layer 113a. Thus, in one embodiment of the present invention, the display device may have some of the mask layer used to protect the first layer 113a, the second layer 113b, and the third layer 113c used during its manufacture remaining. The mask layer may remain between, for example, the first layer 113a, the second layer 113b, or the third layer 113c and the insulating layer 125 or the insulating layer 127. The mask layer will be described in detail in Embodiment 2.

[0234] Figures 9A to 9C show the cross-sectional structure of the region including the insulating layer 127 and its surrounding area.

[0235] As shown in Figures 9A to 9C, the pixel electrodes 111a and 111b have a tapered shape. A first layer 113a is provided so as to cover the end of the pixel electrode 111a, and the first layer 113a also has a tapered portion. Similarly, a second layer 113b is provided so as to cover the end of the pixel electrode 111b, and the second layer 113b also has a tapered portion.

[0236] A mask layer 118a is provided on the first layer 113a, and the mask layer 118a has a portion that overlaps with the pixel electrode 111a or the pixel electrode 111b via the first layer 113a. However, the mask layer 118a does not necessarily have to have a portion that overlaps with the pixel electrode 111a or the pixel electrode 111b.

[0237] An insulating layer 125 is provided so as to cover the first layer 113a, the mask layer 118a, and the insulating layer 255c. The insulating layer 125 is in contact with the top and side surfaces of the mask layer 118a, the side surfaces of the first layer 113a, and the top surface of the insulating layer 255c. An insulating layer 127 is provided on top of the insulating layer 125. The insulating layer 127 overlaps with the pixel electrodes 111a, 111b, the first layer 113a, and the mask layer 118a, respectively, via the insulating layer 125.

[0238] By having one or both of the insulating layers 125 and 127 cover not only the sides but also the top surface of the first layer 113a, delamination of the first layer 113a can be more effectively prevented, thereby improving the reliability of the light-emitting device. Furthermore, the manufacturing yield of the light-emitting device can be increased. Note that the insulating layers 125 and 127 do not necessarily have to overlap with the pixel electrodes 111a, 111b, the first layer 113a, and the mask layer 118a, respectively.

[0239] A common layer 114 and a common electrode 115 are provided on the first layer 113a and the insulating layer 127.

[0240] Figure 9A shows an example where the edges of the mask layer 118a and the insulating layer 125 are approximately perpendicular to the surface of the first layer 113a. As shown in Figure 9B, it is preferable that the edges of the mask layer 118a and the insulating layer 125 have a tapered shape. This can further improve the coverage of the common layer 114 and the common electrode 115.

[0241] Figure 9A shows an example where the upper surface of the insulating layer 127 has a convex curved surface. As shown in Figure 9C, the upper surface of the insulating layer 127 may have both a convex and a concave curved surface.

[0242] The insulating layer 125 can be an insulating layer having an inorganic material. The insulating layer 125 may be a single layer or a laminated structure. For example, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidoxide-nitriding insulating films, and nitride-oxide insulating films can be used for the insulating layer 125. Details of these inorganic insulating films are as described in the description of the protective layer 131.

[0243] In particular, aluminum oxide is preferred because it has a high selectivity ratio with the EL layer during etching and has the function of protecting the EL layer during the formation of the insulating layer 127. In particular, by applying an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by the ALD method to the insulating layer 125, it is possible to form an insulating layer 125 with few pinholes and excellent function in protecting the EL layer. Alternatively, the insulating layer 125 may be a laminated structure of a film formed by the ALD method and a film formed by the sputtering method. For example, the insulating layer 125 may be a laminated structure of an aluminum oxide film formed by the ALD method and a silicon nitride film formed by the sputtering method.

[0244] Preferably, the insulating layer 125 functions as a barrier insulating layer against at least one of water and oxygen. Furthermore, preferably, the insulating layer 125 has the function of suppressing the diffusion of at least one of water and oxygen. Also, preferably, the insulating layer 125 has the function of capturing or fixing (also known as gettering) at least one of water and oxygen.

[0245] In this specification, the term "barrier insulating layer" refers to an insulating layer that has barrier properties. Furthermore, in this specification, "barrier properties" refers to a function that suppresses the diffusion of the corresponding substance (also known as low permeability), or a function that captures or fixes the corresponding substance (also known as gettering).

[0246] The insulating layer 125 has the function of a barrier insulating layer or a gettering function, thereby suppressing the intrusion of impurities (typically at least one of water and oxygen) that could diffuse from the outside into the light-emitting device and the light-receiving device. This configuration makes it possible to provide highly reliable light-emitting devices and light-receiving devices, as well as highly reliable display devices.

[0247] Furthermore, it is preferable that the insulating layer 125 has a low impurity concentration. This prevents impurities from mixing from the insulating layer 125 into the EL layer and degrading the EL layer. Also, by lowering the impurity concentration in the insulating layer 125, the barrier properties against at least one of water and oxygen can be improved. For example, it is desirable that the insulating layer 125 has a sufficiently low hydrogen concentration and a sufficiently low carbon concentration, preferably both.

[0248] The insulating layer 127 provided on the insulating layer 125 has the function of flattening the recess in the insulating layer 125 formed between adjacent light-emitting devices. In other words, the presence of the insulating layer 127 improves the flatness of the surface on which the common electrode 115 is formed. Suitable insulating layers 127 include those made of organic materials. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimidoamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins can be used as the insulating layer 127. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used as the insulating layer 127. Furthermore, a photosensitive resin can be used as the insulating layer 127. A photoresist may be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0249] The insulating layer 127 may be made of a material that absorbs visible light. By absorbing the light emitted from the light-emitting device, the insulating layer 127 can suppress light leakage (stray light) from the light-emitting device to adjacent light-emitting devices via the insulating layer 127. This improves the display quality of the display device. Furthermore, since the display quality can be improved without using a polarizing plate in the display device, the display device can be made lighter and thinner. In addition, it is possible to suppress the incidence of light from the light-emitting device to adjacent light-receiving devices via the insulating layer 127. This improves the accuracy of light detection in the display device.

[0250] Examples of materials that absorb visible light include materials containing pigments such as black, materials containing dyes, light-absorbing resin materials (e.g., polyimide), and resin materials that can be used in color filters (color filter materials). In particular, it is preferable to use a resin material which is made by laminating or mixing two or more color filter materials, as this can enhance the visible light shielding effect.

[0251] If the sides of the first layer 113a, the second layer 113b, and the third layer 113c are in direct contact with the organic resin film, organic solvents that may be contained in the organic resin film may damage these layers. By providing an insulating layer 125 (i.e., an inorganic insulating film), it is possible to create a configuration in which the organic resin film and the sides of the first layer 113a, the second layer 113b, and the third layer 113c are not in direct contact. This makes it possible to suppress the dissolution of the first layer 113a, the second layer 113b, and the third layer 113c by organic solvents.

[0252] A light-shielding layer may be provided on the side of the substrate 120 facing the resin layer 122. Various optical components can also be placed on the outside of the substrate 120. Examples of optical components include polarizing plates, phase difference plates, light diffusion layers (such as diffusion films), anti-reflective layers, and light-gathering films. Furthermore, surface protection layers such as an antistatic film to suppress dust adhesion, a water-repellent film to prevent dirt from adhering, a hard coat film to suppress scratches during use, and an impact-absorbing layer may be placed on the outside of the substrate 120. For example, a glass layer or a silica layer (SiO₂) may be used as the surface protection layer. x By providing a protective layer, surface contamination and scratching can be suppressed, which is preferable. Furthermore, as a surface protective layer, DLC (diamond-like carbon), aluminum oxide (AlO2) x ), polyester-based materials, or polycarbonate-based materials may be used. It is preferable to use a material with high transmittance to visible light for the surface protective layer. Furthermore, it is preferable to use a material with high hardness for the surface protective layer.

[0253] The substrate 120 can be made of glass, quartz, ceramics, sapphire, resin, metal, alloy, semiconductor, etc. The substrate on the side that extracts light from the light-emitting device should be made of a material that transmits the light. If a flexible material is used for the substrate 120, the flexibility of the display device can be increased, and a flexible display can be realized. Alternatively, a polarizing plate may be used as the substrate 120.

[0254] As the substrate 120, polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. may be used. Glass with a thickness sufficient to provide flexibility may also be used as the substrate 120.

[0255] Furthermore, when a circular polarizing plate is superimposed on a display device, it is preferable to use a substrate with high optical isotropy for the substrate of the display device. A substrate with high optical isotropy has low birefringence (or a small amount of birefringence).

[0256] For substrates with high optical isotropy, the absolute value of the retardation (phase difference) is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0257] Examples of films with high optical isotropy include triacetylcellulose (TAC, also known as cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic film.

[0258] Furthermore, when a film is used as the substrate, the film may absorb water, potentially causing wrinkles or other shape changes in the display device. Therefore, it is preferable to use a film with a low water absorption rate as the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferable to use a film with a water absorption rate of 0.1% or less, and even more preferable to use a film with a water absorption rate of 0.01% or less.

[0259] As the resin layer 122, various types of curing adhesives can be used, such as UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Adhesive sheets may also be used.

[0260] Materials that can be used for conductive layers such as the gate, source, and drain of transistors, as well as various wirings and electrodes that constitute display devices, include, for example, metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, as well as alloys mainly composed of these metals. Films containing one or more of these materials can be used as a single layer or in a multilayer structure.

[0261] Furthermore, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene can be used as the light-transmitting conductive material. Alternatively, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metallic materials, can be used. Alternatively, nitrides of such metallic materials (e.g., titanium nitride) may be used. When using metallic materials or alloy materials (or their nitrides), it is preferable to make them thin enough to be light-transmitting. In addition, a laminated film of the above materials can be used as a conductive layer. For example, using a laminated film of a silver-magnesium alloy and indium tin oxide is preferable because it can enhance conductivity. These can also be used as conductive layers for various wirings and electrodes that constitute a display device, and as conductive layers (conductive layers that function as pixel electrodes or counter electrodes) in light-emitting devices.

[0262] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, and aluminum oxide.

[0263] Figure 5A and others show an example in which the colored layers 132R, 132G, and 132B are directly provided on the light-emitting devices 130R, 130G, and 130B via a protective layer 131. This configuration improves the accuracy of the alignment between the light-emitting devices and the colored layers. Furthermore, bringing the positions of the light-emitting devices and the colored layers closer together suppresses color mixing and improves viewing angle characteristics, which is preferable.

[0264] Figures 10A to 10C show cross-sectional views of the area between the dashed lines X1 and X2 in Figure 1B.

[0265] As shown in Figure 10A, the substrate 120 with the colored layer may be bonded to the protective layer 131 with a resin layer 122. By providing a colored layer on the substrate 120, the temperature of the heat treatment in the colored layer formation process can be increased.

[0266] As shown in Figures 10B and 10C, the display device may be provided with a lens array 133. The lens array 133 can be provided with one or both of the light-emitting device and the light-receiving device stacked on top of each other.

[0267] Figure 10B shows an example in which colored layers 132R and 132G are provided on light-emitting devices 130R and 130G via a protective layer 131, an insulating layer 134 is provided on the colored layers 132R and 132G, and a lens array 133 is provided on the insulating layer 134. In Figure 10B, the lens array 133 is also provided on the light-receiving device 150a via a protective layer 131 and an insulating layer 134. By directly forming the colored layer 132R, the colored layer 132G, and the lens array 133 on the substrate on which the light-emitting device and the light-receiving device are formed, the accuracy of the alignment between the light-emitting device or light-receiving device and the colored layer or lens array can be improved.

[0268] For the insulating layer 134, one or both of an inorganic insulating film and an organic insulating film can be used. The insulating layer 134 may have a single-layer structure or a laminated structure. As the insulating layer 134, for example, a material that can be used for the protective layer 131 can be applied. Since the light emission of the light-emitting device is extracted through the insulating layer 134, it is preferable that the insulating layer 134 has high transparency to visible light.

[0269] In FIG. 10B, the light emission of the light-emitting device passes through the color layer, then passes through the lens array 133, and is extracted to the outside of the display device. By bringing the positions of the light-emitting device and the color layer closer, it is possible to suppress color mixing and improve the viewing angle characteristics, which is preferable. Note that the lens array 133 may be provided on the light-emitting device, and the color layer may be provided on the lens array 133.

[0270] FIG. 10C shows an example in which a substrate 120 provided with a color layer 132R, a color layer 132G, and a lens array 133 is bonded onto a protective layer 131 by a resin layer 122. By providing the color layer 132R, the color layer 132G, and the lens array 133 on the substrate 120, the temperature of the heat treatment in these formation processes can be increased.

[0271] FIG. 10C shows an example in which the color layers 132R and 132G are provided in contact with the substrate 120, the insulating layer 134 is provided in contact with the color layers 132R and 132G, and the lens array 133 is provided in contact with the insulating layer 134.

[0272] In Figure 10C, the light emitted from the light-emitting device passes through the lens array 133, then through the colored layer, and is extracted to the outside of the display device. Alternatively, the lens array 133 may be provided in contact with the substrate 120, the insulating layer 134 in contact with the lens array 133, and the colored layer in contact with the insulating layer 134. In this case, the light emitted from the light-emitting device passes through the colored layer, then through the lens array 133, and is extracted to the outside of the display device. As shown in Figures 10B and 10C, it is preferable to provide an overlapping region between the lens array 133 and an adjacent lens array 133 where the colored layer 132R and the colored layer 132G overlap. By providing an overlapping region of different colored colored layers, color mixing of the light emitted from the light-emitting device can be suppressed.

[0273] The lens array 133 may have its convex surface facing the substrate 120 side, or it may face the light-emitting device side.

[0274] The lens array 133 can be formed using at least one of an inorganic material and an organic material. For example, a material containing resin can be used for the lens. Alternatively, a material containing at least one of an oxide and a sulfide can be used for the lens. As the lens array 133, for example, a microlens array can be used. The lens array 133 may be formed directly on a substrate or on a light-emitting device, or a separately formed lens array may be bonded to it.

[0275] The relative widths of the pixel electrodes 111a, 111b, and 111c and the first layer 113a are not particularly limited. Similarly, the relative widths of the pixel electrode 111d and the second layer 113b are not particularly limited. Furthermore, the relative widths of the pixel electrode 111e and the first layer 113a or the third layer 113c are not particularly limited. Also, the relative widths of the pixel electrode 111f and the second layer 113b or the fourth layer 113d are not particularly limited. For example, Figure 5A shows an example where the edges of the first layer 113a and the second layer 113b are located outside the edges of the pixel electrodes. In Figure 5A, the first layer 113a and the second layer 113b are formed to cover the edges of the pixel electrodes. This configuration allows for a higher aperture ratio compared to a configuration where the edges of the first layer 113a and the second layer 113b are located inside the edges of the pixel electrodes.

[0276] Furthermore, by covering the sides of the pixel electrodes with any of the first to fourth layers 113a to 113d, contact between the pixel electrodes and the common electrode 115 can be suppressed, thereby suppressing short circuits between the light-emitting device and the light-receiving device. In addition, the distance between the light-emitting region of the first layer 113a (i.e., the region overlapping with the pixel electrodes) and the edge of the first layer 113a can be increased. The edge of the first layer 113a includes a portion that may have been damaged during the manufacturing process of the display device. By not using this portion as the light-emitting region, variations in the characteristics of the light-emitting device can be suppressed, and reliability can be improved. Similarly, the distance between the light-receiving region of the second layer 113b (i.e., the region overlapping with the pixel electrodes) and the edge of the second layer 113b can be increased, thereby improving reliability. The same applies to the third layer 113c and the fourth layer 113d.

[0277] Figures 11A and 11B show side-by-side cross-sectional views of the section between dashed lines X1 and X2 in Figure 1B and the section between dashed lines Y1 and Y2 in Figure 1A.

[0278] Figure 11A shows an example where the upper edge of the pixel electrode is aligned with the edge of the first layer 113a and the edge of the second layer 113b, or is approximately aligned. Figure 11A also shows an example where the edges of the first layer 113a and the edge of the second layer 113b are located inward from the lower edge of the pixel electrode. Figure 11B also shows an example where the edges of the first layer 113a and the edge of the second layer 113b are located inward from the upper edge of the pixel electrode. In Figures 11A and 11B, the edges of the first layer 113a and the edge of the second layer 113b are located on the pixel electrode.

[0279] As shown in Figures 11A and 11B, when the edges of the first layer 113a and the second layer 113b are located on the pixel electrode, it is possible to suppress the thinning of the first layer 113a and the second layer 113b at the edges of the pixel electrode and in their vicinity, thereby making the thickness of the first layer 113a and the second layer 113b uniform.

[0280] Furthermore, if the edges are aligned or roughly aligned, and the top surface shapes match or roughly match, then in a top view, at least a portion of the contours overlaps between the stacked layers. This includes, for example, cases where the upper and lower layers are processed with the same mask pattern, or partially with the same mask pattern. However, strictly speaking, the contours may not overlap, and the upper layer may be located inside the lower layer, or the upper layer may be located outside the lower layer; in this case as well, the edges are said to be roughly aligned, or the top surface shapes roughly match.

[0281] Furthermore, the ends of the first layer 113a and the second layer 113b may each have both a portion located outside the end of the pixel electrode and a portion located inside the end of the pixel electrode.

[0282] Figures 12A to 12C show side-by-side cross-sectional views of the section between dashed lines X1 and X2 in Figure 1B and the section between dashed lines Y1 and Y2 in Figure 1A.

[0283] As shown in Figures 12A to 12C, an insulating layer 121 may be provided to cover the upper edge of the pixel electrode. The first layer 113a and the second layer 113b can each have a portion that contacts the pixel electrode and a portion that contacts the insulating layer 121. The insulating layer 121 can be a single-layer structure or a multilayer structure using one or both of an inorganic insulating film and an organic insulating film.

[0284] Examples of organic insulating materials that can be used for the insulating layer 121 include acrylic resin, epoxy resin, polyimide resin, polyamide resin, polyimidoamide resin, polysiloxane resin, benzocyclobutene resin, and phenolic resin. Furthermore, inorganic insulating films that can be used for the protective layer 131 can be used as inorganic insulating films for the insulating layer 121.

[0285] When an inorganic insulating film is used as the insulating layer 121, impurities are less likely to enter the light-emitting device and the light-receiving device compared to when an organic insulating film is used, thereby improving the reliability of the light-emitting device and the light-receiving device. Furthermore, since the insulating layer 121 can be made thinner, high resolution can be easily achieved. On the other hand, when an organic insulating film is used as the insulating layer 121, the step coverage is better compared to when an inorganic insulating film is used, and it is less affected by the shape of the pixel electrode. Therefore, short circuits in the light-emitting device and the light-receiving device can be prevented. Specifically, when an organic insulating film is used as the insulating layer 121, the shape of the insulating layer 121 can be processed into a tapered shape or the like.

[0286] The insulating layer 121 is optional. Omitting the insulating layer 121 may increase the aperture ratio of the subpixels. Alternatively, it may allow for a reduction in the distance between subpixels, potentially increasing the detail or resolution of the display device.

[0287] Figure 12A shows an example where the common layer 114 extends into the region between the two first layers 113a on the insulating layer 121. As shown in Figure 12B, a void 135 may be formed in this region.

[0288] The gap 135 has, for example, any one or more selected from air, nitrogen, oxygen, carbon dioxide, and Group 18 elements (typically, helium, neon, argon, xenon, krypton, etc.). Alternatively, the gap 135 may be filled with a resin or the like.

[0289] Also, as shown in FIG. 12C, an insulating layer 125 may be provided so as to cover the upper surface of the insulating layer 121, the side surfaces of the first layer 113a, and the side surfaces of the second layer 113b, and an insulating layer 127 may be provided on the insulating layer 125.

[0290] FIGS. 13A to 13C show a cross-sectional view between the dashed-dotted line X1-X2 in FIG. 1B and a cross-sectional view between the dashed-dotted line Y1-Y2 in FIG. 1A side by side.

[0291] As shown in FIG. 13A, the display device may not have the insulating layer 125 and the insulating layer 127. FIG. 13A shows an example in which the common layer 114 is provided in contact with the upper surface of the insulating layer 255c, the side surfaces and the upper surface of the first layer 113a, and the side surfaces and the upper surface of the second layer 113b. Incidentally, as shown in FIG. 12B, a gap 135 may be provided between adjacent first layers 113a.

[0292] Note that either the insulating layer 125 or the insulating layer 127 may not be provided. For example, by forming the insulating layer 125 using an inorganic material, the insulating layer 125 can be used as a protective insulating layer for the first layer 113a and the second layer 113b. Thereby, the reliability of the display device can be enhanced. Further, for example, by forming the insulating layer 127 using an organic material, the space between adjacent first layers 113a or the like can be filled with the insulating layer 127 and flattened. Thereby, the covering property of the common electrode 115 (upper electrode) formed on the first layer 113a, the second layer 113b, and the insulating layer 127 can be enhanced.

[0293] FIG. 13B shows an example in which the insulating layer 127 is not provided. Note that FIG. 13B shows an example in which the common layer 114 enters the concave portion of the insulating layer 125, but a gap may be formed in this region.

[0294] Figure 13C shows an example where the insulating layer 125 is not provided. When the insulating layer 125 is not provided, the insulating layer 127 can be configured to be in contact with the sides of the first layer 113a and the second layer 113b. The insulating layer 127 can be provided to fill the space between adjacent first layers 113a, etc.

[0295] In this case, it is preferable to use an organic material for the insulating layer 127 that causes less damage to the first layer 113a and the second layer 113b. For example, it is preferable to use an organic material for the insulating layer 127 such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin.

[0296] As described above, the display device of this embodiment has subpixels having a light-emitting device used for image display, subpixels having a light-emitting device used as a light source, and subpixels having a light-receiving device. The subpixels having a light-receiving device include two types of subpixels whose detection wavelength ranges differ from each other in some respects. This makes it possible to increase the functionality of electronic devices.

[0297] This embodiment can be combined with other embodiments as appropriate. Furthermore, if multiple configuration examples are shown within a single embodiment in this specification, these configuration examples can be combined as appropriate.

[0298] (Embodiment 2) In this embodiment, a method for manufacturing a display device according to one aspect of the present invention will be described with reference to Figures 14 to 16. Note that descriptions of the materials and formation methods of each element may be omitted if they are the same as those described in Embodiment 1. Furthermore, the details of the configuration of the light-emitting device and light-receiving device will be described in Embodiments 4 and 5.

[0299] Figures 14A to 14D, 15A to 15C, and 16A to 16C show side-by-side cross-sectional views of the six types of subpixels shown in Figure 1B and the cross-sectional view between the dashed line Y1 and Y2 shown in Figure 1A.

[0300] Thin films (insulating films, semiconductor films, and conductive films, etc.) that constitute display devices can be formed using sputtering, chemical vapor deposition (CVD), vacuum deposition, pulsed laser deposition (PLD), atomic layer deposition (ALD), and other methods. CVD methods include plasma-enhanced CVD (PECVD) and thermal CVD. One type of thermal CVD is metal-organic CVD (MOCVD).

[0301] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed by wet film deposition methods such as spin coating, dip coating, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0302] In particular, vacuum processes such as vapor deposition and solution processes such as spin coating and inkjet can be used to fabricate light-emitting devices. Examples of vapor deposition methods include physical vapor deposition (PVD) methods such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, as well as chemical vapor deposition (CVD). Functional layers included in the EL layer (hole injection layer, hole transport layer, hole blocking layer, light-emitting layer, electron blocking layer, electron transport layer, electron injection layer, charge generation layer, etc.) can be formed by vapor deposition (vacuum deposition, etc.), coating methods (dip coating, die coating, bar coating, spin coating, spray coating, etc.), and printing methods (inkjet, screen printing, offset printing, flexographic printing, gravure, or microcontact printing, etc.).

[0303] Furthermore, when processing the thin film that constitutes the display device, photolithography or the like can be used. Alternatively, the thin film may be processed by nanoimprint lithography, sandblasting, lift-off lithography, or the like. In addition, island-shaped thin films may be directly formed by a film deposition method using a shielding mask such as a metal mask.

[0304] There are two main methods of photolithography. One method involves forming a resist mask on the thin film to be processed, then processing the thin film by etching or other means, and finally removing the resist mask. The other method involves depositing a photosensitive thin film, then exposing and developing it to process the thin film into the desired shape.

[0305] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture thereof. Other options include ultraviolet light, KrF laser light, or ArF laser light. Exposure may also be performed using immersion lithography. Furthermore, extreme ultraviolet (EUV) light or X-rays may be used as the light source for exposure. An electron beam can also be used instead of the light source. Using extreme ultraviolet light, X-rays, or an electron beam is preferable because it allows for extremely fine processing. Note that a photomask is not required when exposure is performed by scanning a beam such as an electron beam.

[0306] For etching thin films, methods such as dry etching, wet etching, and sandblasting can be used.

[0307] First, pixel electrodes 111a, 111b, 111c, 111d, 111e, 111f, and a conductive layer 123 are formed on the layer 101 containing the transistor (Figure 14A). For the formation of the pixel electrodes, for example, sputtering or vacuum deposition can be used.

[0308] As shown in Figure 14A, pixel electrode 111a is provided in the region that will become a sub-pixel 110R that emits red light, pixel electrode 111b is provided in the region that will become a sub-pixel 110G that emits green light, pixel electrode 111c is provided in the region that will become a sub-pixel 110B that emits blue light, pixel electrode 111d is provided in the region that will become a sub-pixel 110S1 that has a light detection function, pixel electrode 111e is provided in the region that will become a sub-pixel 110IR that emits infrared light, and pixel electrode 111f is provided in the region that will become a sub-pixel 110S2 that has a light detection function.

[0309] Next, a film 113B, which will later become the second layer 113b, is formed on the pixel electrodes and on the layer 101 containing the transistors (Figure 14B).

[0310] The first layer 113a of the light-emitting device and the second layer 113b of the light-receiving device may be formed in either order. For example, forming the layer with higher adhesion to the pixel electrode first can suppress film peeling during the process. For example, if the first layer 113a has higher adhesion to the pixel electrode than the second layer 113b, it is preferable to form the first layer 113a first. Also, the thickness of the layer formed first may affect the spacing between the substrate and the mask used to define the film formation area in the subsequent layer formation process. By forming the thinner layer first, shadowing (formation of layers in shaded areas) can be suppressed. For example, when forming a tandem light-emitting device, the first layer 113a is often thicker than the second layer 113b, so it is preferable to form the second layer 113b first. Also, when forming a film by a wet process using a polymer material, it is preferable to form the film first. For example, when using a polymer material for the active layer, it is preferable to form the second layer 113b first. As described above, by determining the formation order according to the material and film formation method, the yield in the manufacture of the display device can be increased.

[0311] As shown in Figure 14B, in the cross-sectional view between the dashed-dotted line Y1-Y2, no film 113B is formed on the conductive layer 123. For example, by using a mask 191 (also called an area mask or rough metal mask, to distinguish it from a fine metal mask) to define the film deposition area, the film 113B can be deposited only in the desired region. By employing a film deposition process using an area mask and a processing process using a resist mask, light-emitting devices and light-receiving devices can be manufactured using a relatively simple process.

[0312] The film 113B can be formed, for example, by a vapor deposition method, specifically a vacuum deposition method. Figure 14B shows the film deposition process using a so-called face-down method, where the substrate is inverted so that the surface to be deposited is facing downwards.

[0313] Furthermore, the film 113B may be formed by methods such as transfer, printing, inkjet, or coating.

[0314] Next, a mask film 118B, which will later become the mask layer 118b, and a mask film 119B, which will later become the mask layer 119b, are formed in order on film 113B and conductive layer 123, respectively (Figure 14C).

[0315] In this embodiment, an example is shown in which the mask film is formed with a two-layer structure consisting of mask film 118B and mask film 119B, but the mask film may also have a single-layer structure or a laminated structure of three or more layers.

[0316] By providing a mask layer on the film 113B, damage to the film 113B during the manufacturing process of the display device can be reduced, thereby improving the reliability of the light-receiving device.

[0317] For mask film 118B, a film with high resistance to the processing conditions of film 113B is used; specifically, a film with a high etching selectivity ratio with film 113B. For mask film 119B, a film with a high etching selectivity ratio with mask film 118B is used.

[0318] Furthermore, mask films 118B and 119B are formed at a temperature lower than the heat resistance temperature of film 113B. The substrate temperature when forming mask films 118B and 119B is typically 200°C or lower, preferably 150°C or lower, more preferably 120°C or lower, more preferably 100°C or lower, and even more preferably 80°C or lower.

[0319] Examples of indicators of heat resistance temperature include the glass transition temperature, softening temperature, melting point, thermal decomposition temperature, and 5% weight loss temperature. The heat resistance temperature of film 113A and film 113B (i.e., the first layer 113a and the second layer 113b) can be any of these temperatures, preferably the lowest of them. Furthermore, if film 113A or film 113B is composed of multiple layers, the lowest heat resistance temperature of each layer can be used as the heat resistance temperature of film 113A or film 113B. In addition, if one layer is a mixed layer composed of multiple materials, for example, the heat resistance temperature of the most abundant material, or the lowest heat resistance temperature of each material, can be used as the heat resistance temperature of that layer.

[0320] It is preferable to use mask films 118B and 119B that can be removed by a wet etching method. By using a wet etching method, the damage to film 113B during processing of mask films 118B and 119B can be reduced compared to when a dry etching method is used.

[0321] For the formation of mask films 118B and 119B, for example, sputtering, ALD (including thermal ALD and PEALD), CVD, and vacuum deposition can be used. Alternatively, they may be formed using the wet film formation method described above.

[0322] Furthermore, it is preferable that the mask film 118B, which is formed in contact with film 113B, is formed using a method that causes less damage to film 113B than the mask film 119B. For example, it is preferable to form the mask film 118B using the ALD method or vacuum deposition method rather than the sputtering method.

[0323] For the mask film 118B and the mask film 119B, one or more types can be used, for example, from among metal films, alloy films, metal oxide films, semiconductor films, organic insulating films, and inorganic insulating films.

[0324] Mask films 118B and 119B can be made from metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing such metallic materials. In particular, it is preferable to use low-melting-point materials such as aluminum or silver. It is preferable to use a metallic material capable of shielding ultraviolet light in one or both of the mask films 118B and 119B, as this can suppress irradiation of film 113B with ultraviolet light and thus suppress the degradation of film 113B.

[0325] Furthermore, the mask films 118B and 119B can be made from metal oxides such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), and silicon-containing indium tin oxide, respectively.

[0326] In addition, element M (where M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium) may be used instead of gallium.

[0327] Furthermore, various inorganic insulating films that can be used in the protective layer 131 can be used as mask films 118B and 119B, respectively. In particular, oxide insulating films are preferred because they have higher adhesion to film 113B compared to nitride insulating films. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide can be used as mask films 118B and 119B, respectively. For example, aluminum oxide films can be formed as mask films 118B and 119B using the ALD method. Using the ALD method is preferred because it reduces damage to the substrate (especially the EL layer or active layer, etc.).

[0328] For example, an inorganic insulating film (e.g., an aluminum oxide film) formed using the ALD method can be used as the mask film 118B, and an inorganic film (e.g., an In-Ga-Zn oxide film, an aluminum film, or a tungsten film) formed using the sputtering method can be used as the mask film 119B.

[0329] Furthermore, the same inorganic insulating film can be used for both the mask film 118B and the insulating layer 125 that is formed later. For example, an aluminum oxide film formed using the ALD method can be used for both the mask film 118B and the insulating layer 125. Here, the same film formation conditions may be applied to the mask film 118B and the insulating layer 125, or different film formation conditions may be applied to each. For example, by forming the mask film 118B under the same conditions as the insulating layer 125, the mask film 118B can be made into an insulating layer with high barrier properties against at least one of water and oxygen. On the other hand, since the mask film 118B is a layer that will be mostly or completely removed in a later process, it is preferable that it be easy to process. Therefore, it is preferable to form the mask film 118B under conditions where the substrate temperature during film formation is lower than that of the insulating layer 125.

[0330] Organic materials may be used in one or both of the mask films 118B and 119B. For example, as the organic material, a material that is soluble in a solvent that is chemically stable to the film located at least on top of film 113B may be used. Materials that are soluble in water or alcohol are particularly suitable. When forming such a film, it is preferable to apply the material by a wet film formation method while it is dissolved in a solvent such as water or alcohol, and then perform a heat treatment to evaporate the solvent. At this time, performing the heat treatment under a reduced pressure atmosphere is preferable because it is possible to remove the solvent at a low temperature and in a short time, thereby reducing thermal damage to film 113B.

[0331] Mask films 118B and 119B may each be made of organic resins such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, alcohol-soluble polyamide resin, or fluoropolymers.

[0332] For example, an organic film (e.g., a PVA film) formed using either a vapor deposition method or the wet film formation method described above can be used as the mask film 118B, and an inorganic film (e.g., a silicon nitride film) formed using a sputtering method can be used as the mask film 119B.

[0333] As described in Embodiment 1, in one embodiment of the present invention, a portion of the mask film may remain as a mask layer in the display device.

[0334] Next, a resist mask 190B is formed on the mask film 119B (Figure 14C). The resist mask 190B can be formed by applying a photosensitive resin (photoresist), followed by exposure and development.

[0335] The resist mask 190B may be made using either a positive-type resist material or a negative-type resist material.

[0336] The resist mask 190B is provided in a position that overlaps with the pixel electrodes 111d and 111f. Preferably, the resist mask 190B is also provided in a position that overlaps with the conductive layer 123. This helps to suppress damage to the conductive layer 123 during the manufacturing process of the display device. Note that it is not necessary to provide the resist mask 190B on the conductive layer 123.

[0337] Next, a portion of the mask film 119B is removed using the resist mask 190B to form the mask layer 119b. The mask layer 119b remains on the pixel electrode 111d, on the pixel electrode 111f, and on the conductive layer 123. After that, the resist mask 190B is removed. Next, the mask layer 119b is used as a mask (also called a hard mask) to remove a portion of the mask film 118B to form the mask layer 118b (Figure 14D).

[0338] Mask films 118B and 119B can be processed by wet etching or dry etching, respectively. It is preferable to process mask films 118B and 119B by anisotropic etching.

[0339] By using the wet etching method, the damage to film 113B during processing of mask films 118B and 119B can be reduced compared to using the dry etching method. When using the wet etching method, it is preferable to use chemical solutions such as a developer, an aqueous solution of tetramethylammonium hydroxide (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof.

[0340] In the processing of the mask film 119B, since film 113B is not exposed, there is a wider range of processing methods to choose from compared to the processing of the mask film 118B. Specifically, when processing the mask film 119B, even if an oxygen-containing gas is used as the etching gas, the degradation of film 113B can be further suppressed.

[0341] Furthermore, when using a dry etching method for processing the mask film 118B, the degradation of film 113B can be suppressed by not using an oxygen-containing gas as the etching gas. When using a dry etching method, it is preferable to use a gas containing noble gases (also called rare gases) such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He as the etching gas.

[0342] For example, when using an aluminum oxide film formed by the ALD method as the mask film 118B, the mask film 118B can be processed by dry etching using CHF3 and He. Also, when using an In-Ga-Zn oxide film formed by the sputtering method as the mask film 119B, the mask film 119B can be processed by wet etching using diluted phosphoric acid. Alternatively, it may be processed by dry etching using CH4 and Ar. Alternatively, the mask film 119B can be processed by wet etching using diluted phosphoric acid. Furthermore, when using a tungsten film formed by the sputtering method as the mask film 119B, the mask film 119B can be processed by dry etching using SF6, CF4 and O2, or CF4, Cl2 and O2.

[0343] The resist mask 190B can be removed, for example, by ashing using oxygen plasma. Alternatively, oxygen gas and a noble gas such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He may be used. Alternatively, the resist mask 190B may be removed by wet etching. In this case, since the mask film 118B is located on the outermost surface and film 113B is not exposed, damage to film 113B can be suppressed during the removal process of the resist mask 190B. Furthermore, the range of selectable methods for removing the resist mask 190B can be broadened.

[0344] Next, the film 113B is processed to form the second layer 113b. For example, mask layers 119b and 118b are used as a hard mask to remove a portion of the film 113B and form the second layer 113b (Figure 14D).

[0345] The film 113B is preferably processed by anisotropic etching. In particular, anisotropic dry etching is preferred. Alternatively, wet etching may be used.

[0346] When using the dry etching method, the degradation of film 113B can be suppressed by not using an oxygen-containing gas as the etching gas.

[0347] Furthermore, an etching gas containing oxygen may be used. Including oxygen in the etching gas can increase the etching rate. Therefore, etching can be performed under low power conditions while maintaining a sufficiently fast etching rate. This suppresses damage to the film 113B. Additionally, it suppresses problems such as the adhesion of reaction products generated during etching.

[0348] When using the dry etching method, it is preferable to use an etching gas containing one or more of the following noble gases: H2, CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He, Ar. Alternatively, it is preferable to use an etching gas containing one or more of these and oxygen. Or, oxygen gas may be used as the etching gas. Specifically, for example, a gas containing H2 and Ar, or a gas containing CF4 and He, can be used as the etching gas. Also, for example, a gas containing CF4, He, and oxygen can be used as the etching gas.

[0349] As described above, in one aspect of the present invention, a resist mask 190B is formed on a mask film 119B, and a mask layer 119b is formed by removing a portion of the mask film 119B using the resist mask 190B. Subsequently, a second layer 113b is formed by removing a portion of the film 113B using the mask layer 119b as a hard mask. Thus, it can be said that the second layer 113b is formed by processing the film 113B using a photolithography method. Note that a portion of the film 113B may be removed using the resist mask 190B. Subsequently, the resist mask 190B may be removed.

[0350] Next, a film 113A, which will later become the first layer 113a, is formed on the pixel electrodes 111a, 111b, 111c, and 111e, on the mask layer 119b, and on the layer 101 containing the transistor (Figure 15A).

[0351] Figure 15A shows an example in which film 113A is not formed on the conductive layer 123 by using mask 192. Film 113A can be formed by the same method as that used for forming film 113B.

[0352] Next, a mask film 118A, which will later become a mask layer 118a, and a mask film 119A, which will later become a mask layer 119a, are formed sequentially on film 113A and conductive layer 123, and then a resist mask 190A is formed (Figure 15B). The materials and formation methods for mask films 118A and 119A are the same as those applicable to mask films 118B and 119B. The materials and formation methods for resist mask 190A are the same as those applicable to resist mask 190B.

[0353] By providing a mask layer on the film 113A, damage to the film 113A during the manufacturing process of the display device can be reduced, thereby improving the reliability of the light-emitting device.

[0354] The resist mask 190A is placed in a position that overlaps with the pixel electrodes 111a, 111b, 111c, and 111e.

[0355] Next, a portion of the mask film 119A is removed using the resist mask 190A to form a mask layer 119a. The mask layer 119a remains on the pixel electrodes 111a, 111b, 111c, and 111e. After that, the resist mask 190A is removed. Then, using the mask layer 119a as a mask, a portion of the mask film 118A is removed to form a mask layer 118a (Figure 15C).

[0356] Next, the film 113A is processed to form the first layer 113a. For example, mask layers 119a and 118a are used as a hard mask to remove a portion of the film 113A and form the first layer 113a (Figure 15C).

[0357] As shown in Figure 15C, multiple first layers 113a can be formed by processing the film 113A. In other words, the film 113A can be divided into multiple first layers 113a. This allows the first layer 113a to be provided in an island-like manner for each subpixel. Furthermore, it is possible to suppress contact between island-like first layers 113a or between island-like first layers 113a and island-like second layers 113b in adjacent subpixels. Therefore, it is possible to suppress the generation of leakage current between subpixels. This suppresses a decrease in the display quality of the display device. In addition, it is possible to achieve both high resolution and high display quality in the display device.

[0358] When forming the third layer 113c, the method for forming the third layer 113c can refer to the method for forming the second layer 113b described above. When forming the third layer 113c, the resist mask 190A is not provided on the pixel electrode 111e, but is provided on the pixel electrode 111e when processing the film that will become the third layer 113c. The order in which the first layer 113a, the second layer 113b, and the third layer 113c are formed does not matter.

[0359] Furthermore, when forming the fourth layer 113d, the method for forming the fourth layer 113d can refer to the method for forming the second layer 113b described above. When forming the fourth layer 113d, the resist mask 190B is not provided on the pixel electrode 111f, but is provided on the pixel electrode 111f when processing the film that will become the fourth layer 113d. The formation order of the first layer 113a, the second layer 113b, and the fourth layer 113d does not matter.

[0360] Next, the mask layers 119a and 119b may be removed. Depending on subsequent processes, the mask layers 118a, 118b, 119a, and 119b may remain in the display device. By removing the mask layers 119a and 119b at this stage, it is possible to suppress the remaining mask layers 119a and 119b in the display device. For example, if conductive materials are used for the mask layers 119a and 119b, removing the mask layers 119a and 119b in advance can suppress the generation of leakage current and the formation of capacitance due to the remaining mask layers 119a and 119b.

[0361] The same method as the mask layer processing method can be used for the mask layer removal process. In particular, by using a wet etching method, the damage inflicted on the first layer 113a and the second layer 113b when removing the mask layer can be reduced compared to when using a dry etching method.

[0362] Alternatively, the mask layer may be removed by dissolving it in a solvent such as water or alcohol. Examples of alcohols include ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0363] After removing the mask layer, a drying treatment may be performed to remove water contained in the first layer 113a and the second layer 113b, and water adsorbed on the surfaces of the first layer 113a and the second layer 113b. For example, a heat treatment can be performed in an inert gas atmosphere or a reduced pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50°C to 200°C, preferably 60°C to 150°C, and more preferably 70°C to 120°C. A reduced pressure atmosphere is preferable because it allows drying at a lower temperature.

[0364] Next, an insulating film 125A, which will later become the insulating layer 125, is formed to cover the pixel electrode, the first layer 113a, the second layer 113b, the mask layer 118a, and the mask layer 118b. Subsequently, an insulating film 127A is formed on the insulating film 125A (Figure 16A).

[0365] It is preferable that the insulating film 125A and insulating film 127A are formed using a method that causes minimal damage to the first layer 113a and the second layer 113b. In particular, since insulating film 125A is formed in contact with the sides of the first layer 113a and the second layer 113b, it is preferable that it be formed using a method that causes less damage to the first layer 113a and the second layer 113b than insulating film 127A.

[0366] Furthermore, insulating film 125A and insulating film 127A are formed at a temperature lower than the heat resistance temperature of the first layer 113a and the second layer 113b, respectively. In addition, by increasing the substrate temperature during film formation of insulating film 125A, it is possible to create a film with a low impurity concentration and high barrier properties against at least one of water and oxygen, even with a thin film thickness.

[0367] The substrate temperature when forming insulating film 125A and insulating film 127A is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher, and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower, respectively.

[0368] As the insulating film 125A, it is preferable to form an insulating film with a thickness of 3 nm or more, 5 nm or more, or 10 nm or more, and a thickness of 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less, within the above substrate temperature range.

[0369] The insulating film 125A is preferably formed using, for example, the ALD method. The ALD method is preferable because it can reduce film formation damage and allow for the formation of a highly covering film. For example, it is preferable to form an aluminum oxide film as the insulating film 125A using the ALD method.

[0370] In addition, the insulating film 125A may be formed using a sputtering method, CVD method, or PECVD method, which have a faster deposition rate than the ALD method. This allows for the production of highly reliable display devices with high productivity.

[0371] The insulating film 127A is preferably formed using the wet film deposition method described above. The insulating film 127A is preferably formed using a photosensitive resin, for example, by spin coating.

[0372] Next, the insulating film 127A is processed to form the insulating layer 127 (Figure 16B). For example, if a photosensitive material is used as the insulating film 127A, the insulating layer 127 can be formed by exposing and developing the insulating film 127A. Etching may also be performed to adjust the surface height of the insulating layer 127. The insulating layer 127 may also be processed by ashing using oxygen plasma, for example. Furthermore, even if a non-photosensitive material is used as the insulating film 127A, the surface height of the insulating layer 127 can be adjusted by ashing or the like.

[0373] Next, at least a portion of the insulating film 125A is removed to form the insulating layer 125 (Figure 16B).

[0374] The insulating film 125A is preferably processed by a dry etching method. The insulating film 125A is preferably processed by anisotropic etching. The insulating film 125A can be processed using an etching gas that can be used when processing a mask film.

[0375] Subsequently, the mask layers 118a and 118b are removed. This exposes at least a portion of the upper surfaces of the first layer 113a, the second layer 113b, and the conductive layer 123.

[0376] The insulating film 125A and the mask layers 118a and 118b may be removed in separate processes or in the same process. For example, if the mask layers 118a and 118b and the insulating film 125A are films formed using the same material (e.g., an aluminum oxide film), they can be removed in the same process, which is preferable.

[0377] Next, a common layer 114 is formed on the insulating layer 125, the insulating layer 127, the first layer 113a, and the second layer 113b. After that, a common electrode 115 is formed on the common layer 114 (Figure 16C).

[0378] The common layer 114 can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0379] For the formation of the common electrode 115, for example, sputtering or vacuum deposition can be used. Alternatively, a film formed by deposition and a film formed by sputtering may be laminated together.

[0380] Subsequently, a protective layer 131 is formed on the common electrode 115, and colored layers 132R, 132G, and 132B are formed on the protective layer 131. The colored layer 132V shown in Figure 16C is formed by laminating colored layer 132G and colored layer 132R. Furthermore, a display device can be manufactured by laminating the substrate 120 onto the protective layer 131 and the colored layers using the resin layer 122 (Figure 16C).

[0381] Methods for forming the protective layer 131 include vacuum deposition, sputtering, CVD, and ALD.

[0382] As described above, in the manufacturing method of the display device of this embodiment, the island-shaped first layer 113a and the island-shaped second layer 113b are formed not using a fine metal mask, but by processing after a film is deposited on one surface, so that the island-shaped layers can be formed with a uniform thickness. This makes it possible to realize a high-resolution display device or a display device with a high aperture ratio. Furthermore, even if the resolution or aperture ratio is high and the distance between subpixels is extremely short, it is possible to suppress contact between adjacent subpixels between island-shaped first layers 113a, between island-shaped second layers 113b, or between island-shaped first layers 113a and island-shaped second layers 113b. Therefore, it is possible to suppress the generation of leakage current between subpixels. This makes it possible to suppress a decrease in display quality and a decrease in light detection accuracy of the display device. Furthermore, it is possible to achieve both high resolution and high display quality in the display device.

[0383] This embodiment can be combined with other embodiments as appropriate.

[0384] (Embodiment 3) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 17 to 26.

[0385] The display device of this embodiment can be a high-definition display device. Therefore, the display device of this embodiment can be used, for example, as a display unit for information terminals (wearable devices) such as wristwatches and bracelets, and as a display unit for wearable devices that can be worn on the head, such as VR devices such as head-mounted displays and AR devices such as glasses.

[0386] Furthermore, the display device of this embodiment can be a high-resolution display device or a large-screen display device. Therefore, the display device of this embodiment can be used in electronic devices with relatively large screens, such as television equipment, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal information terminals, and audio playback devices.

[0387] [Display Module] Figure 17A shows a perspective view of the display module 280. The display module 280 includes a display device 100A and an FPC 290. Note that the display device included in the display module 280 is not limited to display device 100A, but may be any of the display devices 100B to 100F described later.

[0388] The display module 280 has substrates 291 and 292. The display module 280 has a display unit 281. The display unit 281 is an area in the display module 280 that displays an image, and is an area in which light from each pixel provided in the pixel unit 284, which will be described later, can be seen.

[0389] Figure 17B shows a schematic perspective view illustrating the configuration of the substrate 291. On the substrate 291, a circuit section 282, a pixel circuit section 283 on the circuit section 282, and a pixel section 284 on the pixel circuit section 283 are stacked. In addition, a terminal section 285 for connecting to the FPC 290 is provided in the portion of the substrate 291 that does not overlap with the pixel section 284. The terminal section 285 and the circuit section 282 are electrically connected by a wiring section 286, which is composed of multiple wires.

[0390] The pixel section 284 has a plurality of pixels 284a arranged periodically. The right side of Figure 17B shows an enlarged view of one pixel 284a. Various configurations described in Embodiment 1 can be applied to the pixel 284a. Figure 17B shows an example where the pixel 284a has a configuration similar to that of the pixel 110a shown in Figure 1B.

[0391] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0392] A single pixel circuit 283a is a circuit that controls the driving of multiple elements in a single pixel 284a. A single pixel circuit 283a can be configured to have five circuits for controlling the driving of elements. For example, a pixel circuit 283a can be configured to have at least one selection transistor, one current control transistor (driving transistor), and a capacitor for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to the source. This realizes an active-matrix type display device.

[0393] The circuit section 282 has circuits for driving each pixel circuit 283a of the pixel circuit section 283. For example, it is preferable to have one or both of a gate line drive circuit and a source line drive circuit. In addition, it may have at least one of the following: an arithmetic circuit, a memory circuit, and a power supply circuit.

[0394] The FPC290 functions as wiring for supplying video signals or power potential, etc., to the circuit section 282 from an external source. An IC may also be mounted on the FPC290.

[0395] The display module 280 can be configured such that one or both of the pixel circuit section 283 and the circuit section 282 are superimposed on the lower side of the pixel section 284, thereby enabling an extremely high aperture ratio (effective display area ratio) of the display section 281. For example, the aperture ratio of the display section 281 can be 40% or more and less than 100%, preferably 50% or more and 95%, and more preferably 60% or more and 95%. Furthermore, it is possible to arrange the pixels 284a at an extremely high density, enabling an extremely high resolution of the display section 281. For example, it is preferable that the pixels 284a in the display section 281 are arranged with a resolution of 20000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and with a resolution of 20000 ppi or less, or 30000 ppi or less.

[0396] Because such a display module 280 is extremely high-resolution, it can be suitably used in VR devices or glasses-type AR devices. For example, even in a configuration where the display part of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display part 281, so even when the display part is magnified with lenses, pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this and can be suitably used in electronic devices with relatively small display parts. For example, it can be suitably used in the display part of wearable electronic devices such as watches.

[0397] [Display device 100A] The display device 100A shown in Figure 18 includes a substrate 301, a light-emitting device 130R, a light-emitting device 130G, a light-receiving device 150a, a colored layer 132R, a colored layer 132G, a colored layer 132V, a capacitor 240, and a transistor 310.

[0398] As shown in Figure 17B, sub-pixel 110R has a light-emitting device 130R and a colored layer 132R, sub-pixel 110G has a light-emitting device 130G and a colored layer 132G, and sub-pixel 110B has a light-emitting device 130B and a colored layer 132B. In sub-pixel 110R, the light emitted by the light-emitting device 130R is extracted as red light to the outside of the display device 100A via the colored layer 132R. Similarly, in sub-pixel 110G, the light emitted by the light-emitting device 130G is extracted as green light to the outside of the display device 100A via the colored layer 132G. In sub-pixel 110B, the light emitted by the light-emitting device 130B is extracted as blue light to the outside of the display device 100A via the colored layer 132B. Furthermore, for sub-pixel 110IR, for example, the configuration shown in Figure 5B or Figure 6B can be applied. Figure 17B shows an example where the sub-pixel 110S1 has a light-receiving device 150a and a colored layer 132V. Light Lin is incident on the light-receiving device 150a from the substrate 120 side via the colored layer 132V. The colored layer 132V is shown as a stacked structure of colored layer 132R and colored layer 132G. In this case, the sub-pixel 110S2 can have a light-receiving device 150b and no colored layer 132V. Furthermore, the configurations shown in Figures 7A and 7C can be applied to the sub-pixels 110S1 and 110S2.

[0399] Substrate 301 corresponds to substrate 291 in Figures 17A and 17B. The laminated structure from substrate 301 to insulating layer 255c corresponds to layer 101 containing the transistor in Embodiment 1.

[0400] The transistor 310 is a transistor having a channel-forming region in the substrate 301. The substrate 301 can be a semiconductor substrate such as a single-crystal silicon substrate. The transistor 310 comprises a portion of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region of the substrate 301 doped with impurities and functions as either a source or a drain. The insulating layer 314 is provided covering the side surface of the conductive layer 311.

[0401] Furthermore, an element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301.

[0402] Furthermore, an insulating layer 261 is provided covering the transistor 310, and a capacitance 240 is provided on the insulating layer 261.

[0403] The capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located between them. The conductive layer 241 acts as one electrode of the capacitor 240, the conductive layer 245 acts as the other electrode of the capacitor 240, and the insulating layer 243 acts as the dielectric of the capacitor 240.

[0404] The conductive layer 241 is provided on the insulating layer 261 and embedded in the insulating layer 254. The conductive layer 241 is electrically connected to either the source or drain of the transistor 310 by a plug 271 embedded in the insulating layer 261. The insulating layer 243 is provided covering the conductive layer 241. The conductive layer 245 is provided in the region that overlaps with the conductive layer 241 via the insulating layer 243.

[0405] An insulating layer 255a is provided covering the capacitance 240, an insulating layer 255b is provided on the insulating layer 255a, and an insulating layer 255c is provided on the insulating layer 255b. A light-emitting device 130R, a light-emitting device 130G, and a light-receiving device 150a are provided on the insulating layer 255c. Figure 18 shows an example in which the light-emitting devices 130R, 130G, and 150a have a structure similar to the laminated structure shown in Figure 5A. Insulators are provided in the regions between adjacent light-emitting devices and between adjacent light-emitting devices and light-receiving devices. In Figure 18 and other figures, an insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided in these regions.

[0406] A mask layer 118a is located on the first layer 113a of the light-emitting device 130R and the light-emitting device 130G, respectively, and a mask layer 118b is located on the second layer 113b of the light-receiving device 150a.

[0407] Pixel electrodes 111a, 111b, and 111d are electrically connected to either the source or drain of transistor 310 by plugs 256 embedded in insulating layers 243, 255a, 255b, and 255c, a conductive layer 241 embedded in insulating layer 254, and a plug 271 embedded in insulating layer 261. The height of the upper surface of insulating layer 255c and the height of the upper surface of plug 256 are equal or approximately equal. Various conductive materials can be used for the plugs. Figure 18, etc., shows an example in which the pixel electrode has a two-layer structure consisting of a reflective electrode and a transparent electrode on the reflective electrode.

[0408] Furthermore, a protective layer 131 is provided on the light-emitting device 130R, the light-emitting device 130G, and the light-receiving device 150a. The substrate 120 is bonded to the protective layer 131 by a resin layer 122. Details of the components from the light-emitting device to the substrate 120 can be found in Embodiment 1. The substrate 120 corresponds to the substrate 292 in Figure 17A.

[0409] [Display device 100B] The display device 100B shown in Figure 19 has a configuration in which transistors 310A and 310B, each with a channel formed on a semiconductor substrate, are stacked. In the following description of the display device, parts that are the same as those described earlier may be omitted.

[0410] The display device 100B has a configuration in which a substrate 301B on which a transistor 310B, a capacitor 240, and a light-emitting device are provided, and a substrate 301A on which a transistor 310A is provided are bonded together.

[0411] Here, it is preferable to provide an insulating layer 345 on the lower surface of substrate 301B. It is also preferable to provide an insulating layer 346 on top of the insulating layer 261 provided on substrate 301A. Insulating layers 345 and 346 are insulating layers that function as protective layers and can suppress the diffusion of impurities into substrates 301B and 301A. As insulating layers 345 and 346, inorganic insulating films that can be used for protective layer 131 or insulating layer 332 can be used.

[0412] A plug 343 is provided on the substrate 301B, penetrating both the substrate 301B and the insulating layer 345. It is preferable to provide an insulating layer 344 covering the sides of the plug 343. The insulating layer 344 functions as a protective layer and can suppress the diffusion of impurities into the substrate 301B. An inorganic insulating film, usable for the protective layer 131, can be used as the insulating layer 344.

[0413] Furthermore, a conductive layer 342 is provided on the back side of the substrate 301B (the side opposite to the substrate 120 side), beneath the insulating layer 345. Preferably, the conductive layer 342 is provided so as to be embedded in the insulating layer 335. Also, preferably, the undersides of the conductive layer 342 and the insulating layer 335 are flattened. Here, the conductive layer 342 is electrically connected to the plug 343.

[0414] On the other hand, the substrate 301A has a conductive layer 341 provided on an insulating layer 346. Preferably, the conductive layer 341 is provided so as to be embedded in the insulating layer 336. Furthermore, it is preferable that the upper surfaces of the conductive layer 341 and the insulating layer 336 are flattened.

[0415] The conductive layer 341 and the conductive layer 342 are bonded together, thereby electrically connecting the substrate 301A and the substrate 301B. By improving the flatness of the surface formed by the conductive layer 342 and the insulating layer 335, and the surface formed by the conductive layer 341 and the insulating layer 336, the bonding of the conductive layer 341 and the conductive layer 342 can be improved.

[0416] It is preferable to use the same conductive material for conductive layer 341 and conductive layer 342. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film (titanium nitride film, molybdenum nitride film, tungsten nitride film) composed of the above elements can be used. In particular, it is preferable to use copper for conductive layer 341 and conductive layer 342. This makes it possible to apply Cu-Cu (copper-copper) direct bonding technology (a technology that achieves electrical conductivity by connecting Cu (copper) pads to each other).

[0417] [Display device 100C] The display device 100C shown in Figure 20 has a configuration in which conductive layer 341 and conductive layer 342 are joined via bumps 347.

[0418] As shown in Figure 20, the conductive layer 341 and the conductive layer 342 can be electrically connected by providing a bump 347 between them. The bump 347 can be formed using a conductive material including, for example, gold (Au), nickel (Ni), indium (In), or tin (Sn). Solder may also be used as the bump 347. An adhesive layer 348 may also be provided between the insulating layer 345 and the insulating layer 346. Furthermore, when the bump 347 is provided, the insulating layer 335 and the insulating layer 336 may be omitted.

[0419] [Display device 100D] The display device 100D shown in Figure 21 differs from the display device 100A mainly in its transistor configuration.

[0420] Transistor 320 is an OS transistor in which a metal oxide (also called an oxide semiconductor) is applied to the semiconductor layer where the channel is formed.

[0421] The transistor 320 has a semiconductor layer 321, an insulating layer 323, a conductive layer 324, a pair of conductive layers 325, an insulating layer 326, and a conductive layer 327.

[0422] Substrate 331 corresponds to substrate 291 in Figures 17A and 17B. The laminated structure from substrate 331 to insulating layer 255c corresponds to layer 101 containing the transistor in Embodiment 1. An insulating substrate or a semiconductor substrate can be used as substrate 331.

[0423] An insulating layer 332 is provided on the substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320, and prevents oxygen from detaching from the semiconductor layer 321 to the insulating layer 332. As the insulating layer 332, for example, a film that is less susceptible to hydrogen or oxygen diffusion than a silicon oxide film can be used, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film.

[0424] A conductive layer 327 is provided on an insulating layer 332, and an insulating layer 326 is provided covering the conductive layer 327. The conductive layer 327 functions as the first gate electrode of the transistor 320, and a portion of the insulating layer 326 functions as the first gate insulating layer. It is preferable to use an oxide insulating film, such as a silicon oxide film, for at least the portion of the insulating layer 326 that is in contact with the semiconductor layer 321. It is preferable that the upper surface of the insulating layer 326 is flattened.

[0425] The semiconductor layer 321 is provided on the insulating layer 326. Preferably, the semiconductor layer 321 has a metal oxide (also called an oxide semiconductor) film having semiconductor properties. A pair of conductive layers 325 are provided in contact with the semiconductor layer 321 and function as a source electrode and a drain electrode.

[0426] An insulating layer 328 is provided covering the top and side surfaces of a pair of conductive layers 325, as well as the side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided on the insulating layer 328. The insulating layer 328 functions as a barrier layer to prevent impurities such as water or hydrogen from diffusing into the semiconductor layer 321 from the insulating layer 264, etc., and to prevent oxygen from detaching from the semiconductor layer 321. An insulating film similar to that used for the insulating layer 332 can be used for the insulating layer 328.

[0427] An opening is provided in the insulating layer 328 and the insulating layer 264 that reaches the semiconductor layer 321. Inside this opening, the insulating layer 323 and the conductive layer 324 are embedded, in contact with the sides of the insulating layer 264, the insulating layer 328, and the conductive layer 325, as well as the upper surface of the semiconductor layer 321. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

[0428] The upper surfaces of the conductive layer 324, the insulating layer 323, and the insulating layer 264 are flattened so that their heights are the same or approximately the same, and the insulating layer 329 and insulating layer 265 are provided covering them.

[0429] Insulating layers 264 and 265 function as interlayer insulating layers. Insulating layer 329 functions as a barrier layer to prevent impurities such as water or hydrogen from diffusing into the transistor 320 from insulating layer 265, etc. As insulating layer 329, an insulating film similar to that used for insulating layers 328 and 332 can be used.

[0430] A plug 274, which is electrically connected to one of the pair of conductive layers 325, is provided so as to be embedded in the insulating layers 265, 329, and 264. Here, it is preferable that the plug 274 has a conductive layer 274a that covers the sides of the openings of the insulating layers 265, 329, 264, and 328, and a part of the upper surface of the conductive layer 325, and a conductive layer 274b that is in contact with the upper surface of the conductive layer 274a. In this case, it is preferable to use a conductive material that does not easily allow hydrogen and oxygen to diffuse as the conductive layer 274a.

[0431] [Display device 100E] The display device 100E shown in Figure 22 has a configuration in which transistors 320A and 320B, each having an oxide semiconductor in the semiconductor on which the channel is formed, are stacked.

[0432] For details regarding transistors 320A and 320B, and their peripheral configurations, please refer to the display device 100D described above.

[0433] In this example, we have used a configuration in which two transistors having oxide semiconductors are stacked, but this is not the only option. For example, a configuration in which three or more transistors are stacked may also be used.

[0434] [Display device 100F] The display device 100F shown in Figure 23 has a configuration in which a transistor 310 with a channel formed on a substrate 301 and a transistor 320 containing a metal oxide in the semiconductor layer where the channel is formed are stacked.

[0435] An insulating layer 261 is provided covering the transistor 310, and a conductive layer 251 is provided on the insulating layer 261. An insulating layer 262 is provided covering the conductive layer 251, and a conductive layer 252 is provided on the insulating layer 262. The conductive layers 251 and 252 each function as wiring. An insulating layer 263 and an insulating layer 332 are provided covering the conductive layer 252, and a transistor 320 is provided on the insulating layer 332. An insulating layer 265 is provided covering the transistor 320, and a capacitor 240 is provided on the insulating layer 265. The capacitor 240 and the transistor 320 are electrically connected by a plug 274.

[0436] Transistor 320 can be used as a transistor constituting a pixel circuit. Transistor 310 can also be used as a transistor constituting a pixel circuit, or as a transistor constituting a drive circuit (gate line drive circuit, source line drive circuit) for driving the pixel circuit. Furthermore, transistors 310 and 320 can be used as transistors constituting various circuits such as arithmetic circuits or memory circuits.

[0437] This configuration allows for the formation of not only pixel circuits but also drive circuits directly beneath the light-emitting device, making it possible to miniaturize the display device compared to cases where the drive circuits are located around the display area.

[0438] [Display device 100G] Figure 24 shows a perspective view of the display device 100G, and Figure 25A shows a cross-sectional view of the display device 100G.

[0439] The display device 100G has a configuration in which substrate 152 and substrate 151 are bonded together. In Figure 24, substrate 152 is shown with a dashed line.

[0440] The display device 100G includes a display unit 162, a connection unit 140, a circuit 164, wiring 165, etc. Figure 24 shows an example in which IC 173 and FPC 172 are mounted on the display device 100G. Therefore, the configuration shown in Figure 24 can also be described as a display module having the display device 100G, an IC (integrated circuit), and an FPC.

[0441] The connection portion 140 is provided on the outside of the display portion 162. The connection portion 140 can be provided along one or more sides of the display portion 162. There may be one or more connection portions 140. Figure 24 shows an example in which the connection portion 140 is provided so as to surround all four sides of the display portion. At the connection portion 140, the common electrode of the light-emitting device and the conductive layer are electrically connected, and a potential can be supplied to the common electrode.

[0442] For example, a scan line drive circuit can be used as circuit 164.

[0443] Wiring 165 has the function of supplying signals and power to the display unit 162 and the circuit 164. These signals and power are input to wiring 165 from an external source via FPC 172, or from IC 173.

[0444] Figure 24 shows an example in which IC 173 is provided on the substrate 151 using a COG (Chip On Glass) method or COF (Chip On Film) method. IC 173 can be an IC having, for example, a scan line drive circuit or a signal line drive circuit. Note that the display device 100G and the display module may be configured without an IC. Alternatively, the IC may be mounted on an FPC using a COF method or the like.

[0445] Figure 25A shows an example of a cross-section of the display device 100G when a portion of the area including the FPC 172, a portion of the circuit 164, a portion of the display unit 162, a portion of the connection unit 140, and a portion of the area including the end are cut.

[0446] The display device 100G shown in Figure 25A has a transistor 201, a transistor 205, a light-emitting device 130R that emits red light, a light-emitting device 130G that emits green light, a light-receiving device 150a, a colored layer 132R that transmits red light, and a colored layer 132G that transmits green light, etc., between substrates 151 and 152.

[0447] The light-emitting devices 130R, 130G, and the light-receiving device 150a each have a structure similar to the stacked structure shown in Figure 7A, except that the pixel electrode configuration differs. Details of the light-emitting and light-receiving devices can be found in Embodiment 1.

[0448] The light-emitting device 130R has a conductive layer 112a, a conductive layer 126a on the conductive layer 112a, and a conductive layer 129a on the conductive layer 126a. All of the conductive layers 112a, 126a, and 129a can be called pixel electrodes, or only a part of them can be called pixel electrodes.

[0449] The light-emitting device 130G has a conductive layer 112b, a conductive layer 126b on the conductive layer 112b, and a conductive layer 129b on the conductive layer 126b.

[0450] The light-receiving device 150a has a conductive layer 112c, a conductive layer 126c on the conductive layer 112c, and a conductive layer 129c on the conductive layer 126c.

[0451] The conductive layer 112a is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214. The edge of the conductive layer 126a is located outside the edge of the conductive layer 112a. The edges of the conductive layer 126a and the conductive layer 129a are aligned or approximately aligned. For example, conductive layers that function as reflective electrodes can be used for conductive layers 112a and 126a, and a conductive layer that functions as a transparent electrode can be used for conductive layer 129a.

[0452] The conductive layers 112b, 126b, and 129b in the light-emitting device 130G, and the conductive layers 112c, 126c, and 129c in the light-receiving device 150a are the same as the conductive layers 112a, 126a, and 129a in the light-emitting device 130R, so a detailed explanation is omitted.

[0453] The conductive layers 112a, 112b, and 112c are formed to cover the openings provided in the insulating layer 214. Layer 128 is embedded in the recesses of the conductive layers 112a, 112b, and 112c.

[0454] Layer 128 has the function of flattening the recesses of the conductive layers 112a, 112b, and 112c. Conductive layers 126a, 126b, and 126c, which are electrically connected to conductive layers 112a, 112b, and 112c, are provided on conductive layers 112a, 112b, and 112c and on layer 128. Therefore, regions that overlap with the recesses of conductive layers 112a, 112b, and 112c can also be used as light-emitting or light-receiving regions, thereby increasing the aperture ratio of the pixels.

[0455] Layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used for layer 128 as appropriate. In particular, it is preferable that layer 128 be formed using an insulating material, and especially preferable that it be formed using an organic insulating material. For example, the materials that can be used for the insulating layer 121 described above can be applied to layer 128.

[0456] The top and side surfaces of the conductive layers 126a, 126b, 129a, and 129b are covered by the first layer 113a. Similarly, the top and side surfaces of the conductive layers 126c and 129c are covered by the second layer 113b. Therefore, the entire region where the conductive layers 126a, 126b, and 126c are provided can be used as the light-emitting region of the light-emitting devices 130R and 130G and the light-receiving region of the light-receiving device 150a, thereby increasing the aperture ratio of the pixels.

[0457] The sides of the first layer 113a and the second layer 113b are covered by insulating layers 125 and 127, respectively. A mask layer 118a is located between the first layer 113a and the insulating layer 125. A mask layer 118b is located between the second layer 113b and the insulating layer 125. A common layer 114 is provided on the first layer 113a, the second layer 113b, and the insulating layers 125 and 127, and a common electrode 115 is provided on the common layer 114. The common layer 114 and the common electrode 115 are continuous films provided in common to multiple light-emitting devices and light-receiving devices.

[0458] Furthermore, a protective layer 131 is provided on the light-emitting devices 130R, 130G, and the light-receiving device 150a. The protective layer 131 and the substrate 152 are bonded via an adhesive layer 142. The substrate 152 is provided with a light-shielding layer 117 and colored layers 132R, 132G. For sealing the light-emitting devices, a solid sealing structure or a hollow sealing structure can be applied. In Figure 25A, the space between the substrate 152 and the substrate 151 is filled with the adhesive layer 142, and a solid sealing structure is applied. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), and a hollow sealing structure may be applied. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting devices. Also, the space may be filled with a resin different from the adhesive layer 142, which is provided in a frame shape.

[0459] In the connection portion 140, a conductive layer 123 is provided on the insulating layer 214. The conductive layer 123 is shown as an example of a laminated structure consisting of a conductive film obtained by processing the same conductive film as conductive layers 112a, 112b, and 112c, a conductive film obtained by processing the same conductive film as conductive layers 126a, 126b, and 126c, and a conductive film obtained by processing the same conductive film as conductive layers 129a, 129b, and 129c. The ends of the conductive layer 123 are covered by a mask layer 118b, an insulating layer 125, and an insulating layer 127. A common layer 114 is provided on the conductive layer 123, and a common electrode 115 is provided on the common layer 114. The conductive layer 123 and the common electrode 115 are electrically connected via the common layer 114. Note that the common layer 114 does not necessarily have to be formed in the connection portion 140. In this case, the conductive layer 123 and the common electrode 115 are in direct contact and electrically connected.

[0460] The display device 100G is a top-emission type. The light emitted by the light-emitting device is emitted towards the substrate 152. It is preferable to use a material with high transmittance to visible light for the substrate 152. The pixel electrodes contain a material that reflects visible light, and the counter electrodes (common electrodes 115) contain a material that transmits visible light.

[0461] The laminated structure from the substrate 151 to the insulating layer 214 corresponds to the layer 101 containing the transistor in Embodiment 1.

[0462] Both transistors 201 and 205 are formed on the substrate 151. These transistors can be manufactured using the same materials and the same process.

[0463] On the substrate 151, insulating layers 211, 213, 215, and 214 are provided in this order. A portion of insulating layer 211 functions as a gate insulating layer for each transistor. A portion of insulating layer 213 functions as a gate insulating layer for each transistor. Insulating layer 215 is provided covering the transistors. Insulating layer 214 is provided covering the transistors and functions as a planarization layer. The number of gate insulating layers and insulating layers covering the transistors are not limited and may be a single layer or two or more layers, respectively.

[0464] It is preferable to use a material that does not easily allow impurities such as water and hydrogen to diffuse into at least one layer of the insulating layer covering the transistor. This allows the insulating layer to function as a barrier layer. With such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby improving the reliability of the display device.

[0465] It is preferable to use inorganic insulating films for insulating layer 211, insulating layer 213, and insulating layer 215. Examples of inorganic insulating films that can be used include silicon nitride film, silicon oxide nitride film, silicon oxide film, silicon nitride oxide film, aluminum oxide film, and aluminum nitride film. Alternatively, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film may also be used. Furthermore, two or more of the above insulating films may be laminated together.

[0466] An organic insulating layer is preferred for the insulating layer 214, which functions as a planarizing layer. Examples of materials that can be used for the organic insulating layer include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimidoamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins. Alternatively, the insulating layer 214 may have a laminated structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 preferably functions as an etching protection layer. This makes it possible to suppress the formation of depressions in the insulating layer 214 during processing of conductive layers 112a, 126a, or 129a. Alternatively, depressions may be provided in the insulating layer 214 during processing of conductive layers 112a, 126a, or 129a.

[0467] Transistors 201 and 205 have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as source and drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0468] The transistor structure of the display device of this embodiment is not particularly limited. For example, planar transistors, staggered transistors, inverse staggered transistors, etc., can be used. Furthermore, either a top-gate or bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0469] Transistors 201 and 205 are configured in which a semiconductor layer on which a channel is formed is sandwiched between two gates. The transistors may be driven by connecting the two gates and supplying them with the same signal. Alternatively, the threshold voltage of the transistors may be controlled by applying a potential to control the threshold voltage to one of the two gates and a potential to drive the other gate.

[0470] The crystallinity of the semiconductor material used in the transistor is not particularly limited; amorphous semiconductors, single-crystal semiconductors, or semiconductors with crystalline properties other than single crystals (microcrystalline semiconductors, polycrystalline semiconductors, or semiconductors with crystalline regions in part) may be used. Using a single-crystal semiconductor or a semiconductor with crystalline properties is preferable because it can suppress the degradation of transistor characteristics.

[0471] The semiconductor layer of the transistor preferably has a metal oxide (also called an oxide semiconductor). In other words, the display device of this embodiment preferably uses a transistor (hereinafter referred to as an OS transistor) that uses a metal oxide in the channel formation region.

[0472] Examples of crystalline oxide semiconductors include CAAC (c-axis-aligned crystalline)-OS and nc (nanocrystalline)-OS.

[0473] Alternatively, a transistor using silicon as the channel-forming region (Si transistor) may be used. Examples of silicon include single-crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor having low-temperature polysilicon (LTPS (Low Temperature Poly Silicon)) in the semiconductor layer (hereinafter also referred to as an LTPS transistor) can be used. LTPS transistors have high field-effect mobility and good frequency characteristics.

[0474] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (e.g., source driver circuits) can be fabricated on the same board as the display unit. This simplifies the external circuits implemented in the display device, reducing component and mounting costs.

[0475] OS transistors have extremely high field-effect mobility compared to transistors using amorphous silicon. Furthermore, OS transistors exhibit remarkably low source-drain leakage current (also called off-current) in the off state, allowing them to retain charge stored in a capacitor connected in series with the transistor for extended periods. Additionally, the application of OS transistors can reduce the power consumption of display devices.

[0476] Furthermore, to increase the luminescence brightness of the light-emitting device included in the pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of the drive transistor included in the pixel circuit. Compared to Si transistors, OS transistors have a higher breakdown voltage between the source and drain, so a higher voltage can be applied between the source and drain of an OS transistor. Therefore, by using an OS transistor as the drive transistor included in the pixel circuit, the amount of current flowing through the light-emitting device can be increased, thereby increasing the luminescence brightness of the light-emitting device.

[0477] Furthermore, when the transistor operates in the saturation region, OS transistors exhibit smaller changes in source-drain current in response to changes in gate-source voltage compared to Si transistors. Therefore, by using OS transistors as driving transistors in the pixel circuit, the current flowing between the source and drain can be precisely controlled by changes in gate-source voltage, thereby allowing control of the current flowing to the light-emitting device. This allows for an increase in the number of grayscale levels in the pixel circuit.

[0478] Furthermore, in terms of the saturation characteristics of the current flowing when a transistor operates in the saturation region, OS transistors can supply a more stable current (saturation current) than Si transistors, even when the source-drain voltage gradually increases. Therefore, by using OS transistors as driving transistors, a stable current can be supplied to the light-emitting device even if there are variations in the current-voltage characteristics of the EL device. In other words, when operating in the saturation region, the source-drain current remains almost unchanged even when the source-drain voltage is increased, thus stabilizing the luminescence brightness of the light-emitting device.

[0479] As described above, by using OS transistors in the drive transistors included in the pixel circuit, it is possible to achieve "suppression of black level floating," "increase in luminescence brightness," "multi-gradation," and "suppression of variations in light-emitting devices."

[0480] The metal oxide used in the semiconductor layer preferably comprises, for example, indium, M (where M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0481] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also written as IGZO) as the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also written as IAZO). Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also written as IAGZO).

[0482] When the semiconductor layer is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide is greater than or equal to the atomic ratio of M. Possible atomic ratios of metal elements in such an In-M-Zn oxide include: In:M:Zn=1:1:1 or near that composition, In:M:Zn=1:1:1.2 or near that composition, In:M:Zn=1:3:2 or near that composition, In:M:Zn=1:3:4 or near that composition, In:M:Zn=2:1:3 or near that composition, In:M:Zn=3:1:2 or near that composition, and In:M:Zn=4:2:3 Examples include compositions near the desired atomic ratio, such as In:M:Zn=4:2:4.1 or near that ratio, In:M:Zn=5:1:3 or near that ratio, In:M:Zn=5:1:6 or near that ratio, In:M:Zn=5:1:7 or near that ratio, In:M:Zn=5:1:8 or near that ratio, In:M:Zn=6:1:6 or near that ratio, In:M:Zn=5:2:5 or near that ratio, etc. Note that "nearby composition" includes a range of ±30% of the desired atomic ratio.

[0483] For example, when describing a composition with an atomic ratio of In:Ga:Zn = 4:2:3 or a similar ratio, it includes cases where, when In is set to 4, Ga is between 1 and 3, and Zn is between 2 and 4. Also, when describing a composition with an atomic ratio of In:Ga:Zn = 5:1:6 or a similar ratio, it includes cases where, when In is set to 5, Ga is greater than 0.1 and 2 or less, and Zn is between 5 and 7. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn = 1:1:1 or a similar ratio, it includes cases where, when In is set to 1, Ga is greater than 0.1 and 2 or less, and Zn is greater than 0.1 and 2 or less.

[0484] The transistors in circuit 164 and the transistors in display unit 162 may have the same structure or different structures. The structures of the multiple transistors in circuit 164 may all be the same or there may be two or more different structures. Similarly, the structures of the multiple transistors in display unit 162 may all be the same or there may be two or more different structures.

[0485] All of the transistors in the display unit 162 may be OS transistors, all of the transistors in the display unit 162 may be Si transistors, or some of the transistors in the display unit 162 may be OS transistors and the rest may be Si transistors.

[0486] For example, by using both LTPS transistors and OS transistors in the display unit 162, a display device with low power consumption and high driving capability can be realized. Furthermore, a configuration combining LTPS transistors and OS transistors is sometimes referred to as LTPO. A more suitable example is a configuration in which OS transistors are used for transistors that function as switches to control conduction and non-conduction between wires, and LTPS transistors are used for transistors that control current.

[0487] For example, one of the transistors in the display unit 162 functions as a transistor for controlling the current flowing to the light-emitting device, and can also be called a drive transistor. One of the source and drain of the drive transistor is electrically connected to the pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor for this drive transistor. This makes it possible to increase the current flowing to the light-emitting device in the pixel circuit.

[0488] On the other hand, the other transistor in the display unit 162 functions as a switch for controlling the selection and deselection of pixels, and can also be called a selection transistor. The gate of the selection transistor is electrically connected to the gate line, and one of the source and drain is electrically connected to the source line (signal line). It is preferable to use an OS transistor for the selection transistor. This makes it possible to maintain the gradation of pixels even when the frame frequency is significantly reduced (e.g., 1 fps or less), and thus power consumption can be reduced by stopping the driver when displaying still images.

[0489] Thus, a display device according to one aspect of the present invention can combine a high aperture ratio, high resolution, high display quality, and low power consumption.

[0490] Furthermore, one embodiment of the present invention is a display device having an OS transistor and a light-emitting device with an MML (metal maskless) structure. This configuration makes it possible to extremely reduce the leakage current that can flow through the transistor and the leakage current that can flow between adjacent light-emitting devices (also called lateral leakage current or side leakage current). With this configuration, when an image is displayed on the display device, the observer can observe one or more of the following: image sharpness, image clarity, high saturation, and high contrast ratio. Moreover, by having an extremely low leakage current that can flow through the transistor and lateral leakage current between light-emitting devices, it is possible to achieve a display with as little light leakage (so-called black floating) that may occur when displaying black as possible.

[0491] Figures 25B and 25C show other examples of transistor configurations.

[0492] Transistors 209 and 210 each have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a semiconductor layer 231 having a channel forming region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 that functions as a gate insulating layer, a conductive layer 223 that functions as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel forming region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel forming region 231i. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0493] In the transistor 209 shown in Figure 25B, an example is shown where the insulating layer 225 covers the top and sides of the semiconductor layer 231. The conductive layers 222a and 222b are connected to the low-resistance region 231n through openings provided in the insulating layers 225 and 215, respectively. Of the conductive layers 222a and 222b, one functions as the source and the other as the drain.

[0494] On the other hand, in the transistor 210 shown in Figure 25C, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231, but does not overlap with the low-resistance region 231n. For example, the structure shown in Figure 25C can be fabricated by processing the insulating layer 225 using the conductive layer 223 as a mask. In Figure 25C, an insulating layer 215 is provided covering the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and conductive layer 222b are connected to the low-resistance region 231n, respectively, through openings in the insulating layer 215.

[0495] A connection portion 204 is provided in the region of substrate 151 where substrate 152 does not overlap. At the connection portion 204, wiring 165 is electrically connected to FPC 172 via conductive layer 166 and connection layer 242. The conductive layer 166 is shown as an example of a laminated structure consisting of a conductive film obtained by processing the same conductive film as conductive layers 112a, 112b, and 112c, a conductive film obtained by processing the same conductive film as conductive layers 126a, 126b, and 126c, and a conductive film obtained by processing the same conductive film as conductive layers 129a, 129b, and 129c. The conductive layer 166 is exposed on the upper surface of the connection portion 204. This allows the connection portion 204 and FPC 172 to be electrically connected via the connection layer 242.

[0496] It is preferable to provide a light-shielding layer 117 on the surface of the substrate 152 that faces the substrate 151. The light-shielding layer 117 can be provided between adjacent light-emitting devices, at connection points 140, and in circuits 164, etc. In addition, various optical components can be arranged on the outside of the substrate 152.

[0497] Materials that can be used for substrate 120 can be applied to substrate 151 and substrate 152, respectively.

[0498] As the adhesive layer 142, a material that can be used for the resin layer 122 can be applied.

[0499] As the connecting layer 242, an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), etc., can be used.

[0500] [Display device 100H] The display device 100H shown in Figure 26A differs from the display device 100G mainly in that it is a bottom-emission type display device.

[0501] The light emitted by the light-emitting device is projected onto the substrate 151. It is preferable to use a material with high transparency to visible light for the substrate 151. On the other hand, the light transmittance of the material used for the substrate 152 is not a requirement.

[0502] It is preferable to form a light-shielding layer 117 between the substrate 151 and the transistor 201, and between the substrate 151 and the transistor 205. Figure 26A shows an example in which a light-shielding layer 117 is provided on the substrate 151, an insulating layer 153 is provided on the light-shielding layer 117, and transistors 201, 205, etc. are provided on the insulating layer 153.

[0503] The light-emitting device 130R includes a conductive layer 112a, a conductive layer 126a on the conductive layer 112a, and a conductive layer 129a on the conductive layer 126a.

[0504] The light-emitting device 130G has a conductive layer 112b, a conductive layer 126b on the conductive layer 112b, and a conductive layer 129b on the conductive layer 126b.

[0505] The conductive layers 112a, 112b, 126a, 126b, 129a, and 129b are made of materials with high transmittance to visible light. It is preferable to use a material that reflects visible light for the common electrode 115.

[0506] Furthermore, while Figures 25A and 26A show examples where the upper surface of layer 128 has a flat portion, the shape of layer 128 is not particularly limited. Figures 26B to 26D show modified examples of layer 128.

[0507] As shown in Figures 26B and 26D, the upper surface of layer 128 can be configured to have a shape in which the center and its vicinity are recessed in a cross-sectional view, that is, a shape having a concave curved surface.

[0508] Furthermore, as shown in Figure 26C, the upper surface of layer 128 can be configured to have a shape that bulges in the center and its vicinity when viewed in cross-section, that is, a shape with a convex curved surface.

[0509] Furthermore, the upper surface of layer 128 may have one or both of a convex and a concave surface. Also, the number of convex and concave surfaces on the upper surface of layer 128 is not limited and can be one or more.

[0510] Furthermore, the height of the top surface of layer 128 and the height of the top surface of the conductive layer 112a may be the same or approximately the same, or they may be different from each other. For example, the height of the top surface of layer 128 may be lower or higher than the height of the top surface of the conductive layer 112a.

[0511] Furthermore, Figure 26B can be seen as an example in which layer 128 is housed inside a recess in the conductive layer 112a. On the other hand, as shown in Figure 26D, layer 128 may exist outside the recess in the conductive layer 112a, that is, the width of the upper surface of layer 128 may be wider than that of the recess.

[0512] This embodiment can be combined with other embodiments as appropriate.

[0513] (Embodiment 4) This embodiment describes a light-emitting device that can be used in a display device according to one aspect of the present invention.

[0514] In this specification, a structure that produces different light-emitting colors (e.g., blue (B), green (G), and red (R)) for each light-emitting device may be referred to as an SBS (Side By Side) structure.

[0515] The light-emitting device can emit colors such as red, green, blue, cyan, magenta, yellow, or white. Furthermore, the color purity can be improved by adding a microcavity structure to the light-emitting device.

[0516] [Light-emitting devices] As shown in Figure 27A, the light-emitting device has an EL layer 763 between a pair of electrodes (lower electrode 761 and upper electrode 762). The EL layer 763 can be composed of multiple layers, such as layer 780, light-emitting layer 771, and layer 790.

[0517] The light-emitting layer 771 has at least a light-emitting material.

[0518] When the lower electrode 761 is the anode and the upper electrode 762 is the cathode, layer 780 has one or more of the following: a layer containing a material with high hole injection properties (hole injection layer), a layer containing a material with high hole transport properties (hole transport layer), and a layer containing a material with high electron blocking properties (electron blocking layer). Similarly, layer 790 has one or more of the following: a layer containing a material with high electron injection properties (electron injection layer), a layer containing a material with high electron transport properties (electron transport layer), and a layer containing a material with high hole blocking properties (hole blocking layer). When the lower electrode 761 is the cathode and the upper electrode 762 is the anode, layers 780 and 790 have the opposite configurations to those described above.

[0519] A configuration having a layer 780, an emissive layer 771, and a layer 790 provided between a pair of electrodes can function as a single emissive unit, and in this specification, the configuration shown in Figure 27A is referred to as a single structure.

[0520] Furthermore, Figure 27B shows a modified example of the EL layer 763 of the light-emitting device shown in Figure 27A. Specifically, the light-emitting device shown in Figure 27B has a layer 781 on the lower electrode 761, a layer 782 on the layer 781, a light-emitting layer 771 on the layer 782, a layer 791 on the light-emitting layer 771, a layer 792 on the layer 791, and an upper electrode 762 on the layer 792.

[0521] When the lower electrode 761 is the anode and the upper electrode 762 is the cathode, for example, layer 781 can be a hole injection layer, layer 782 a hole transport layer, layer 791 an electron transport layer, and layer 792 an electron injection layer. Also, when the lower electrode 761 is the cathode and the upper electrode 762 is the anode, layer 781 can be an electron injection layer, layer 782 an electron transport layer, layer 791 a hole transport layer, and layer 792 a hole injection layer. By using such a layer structure, carriers can be efficiently injected into the light-emitting layer 771, and the efficiency of carrier recombination within the light-emitting layer 771 can be increased.

[0522] Furthermore, as shown in Figures 27C and 27D, a configuration in which multiple light-emitting layers (light-emitting layers 771, 772, and 773) are provided between layer 780 and layer 790 is also a variation of the single structure.

[0523] Furthermore, as shown in Figures 27E and 27F, a configuration in which multiple light-emitting units (EL layers 763a and EL layers 763b) are connected in series via a charge generation layer 785 is referred to as a tandem structure in this specification. The tandem structure may also be called a stacked structure. By using a tandem structure, a light-emitting device capable of high-brightness emission can be achieved.

[0524] In Figures 27C and 27D, the light-emitting layers 771, 772, and 773 may be made of light-emitting materials that emit light of the same color, or even the same light-emitting material. For example, light-emitting materials that emit blue light may be used for the light-emitting layers 771, 772, and 773. A color conversion layer may be provided as layer 764 as shown in Figure 27D.

[0525] Furthermore, light-emitting materials that emit light of different colors may be used for the light-emitting layers 771, 772, and 773, respectively. If the light emitted by the light-emitting layers 771, 772, and 773 are complementary colors, white light emission can be obtained. A color filter (also called a colored layer) may be provided as layer 764 as shown in Figure 27D. By passing white light through the color filter, light of a desired color can be obtained.

[0526] A light-emitting device that emits white light preferably contains two or more types of light-emitting materials. For example, by making the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer complementary colors, a light-emitting device that emits white light as a whole can be obtained. Also, when obtaining white light emission using three or more light-emitting layers, the combination of the light-emitting colors of the three or more light-emitting layers will result in a configuration that emits white light as a whole.

[0527] Furthermore, in Figures 27E and 27F, the light-emitting layer 771 and the light-emitting layer 772 may be made of light-emitting materials that emit light of the same color, or even the same light-emitting material. Alternatively, the light-emitting layer 771 and the light-emitting layer 772 may be made of light-emitting materials that emit light of different colors. When the light emitted by the light-emitting layer 771 and the light emitted by the light-emitting layer 772 are complementary colors, white light emission is obtained. Figure 27F shows an example in which an additional layer 764 is provided. As layer 764, one or both of a color conversion layer and a color filter (coloring layer) can be used. Note that in Figures 27D and 27F, in order to extract light to the upper electrode 762 side, a conductive film that transmits visible light is used for the upper electrode 762.

[0528] Furthermore, in Figures 27C, 27D, 27E, and 27F, as shown in Figure 27B, layer 780 and layer 790 may each be independently constructed as a laminated structure consisting of two or more layers.

[0529] Next, we will describe materials that can be used in light-emitting devices.

[0530] Of the lower electrode 761 and upper electrode 762, the electrode that extracts light preferably uses a conductive film that transmits visible light. Furthermore, it is preferable to use a conductive film that reflects visible light on the electrode that does not extract light. In addition, if the display device has a light-emitting device that emits infrared light, it is preferable to use a conductive film that transmits both visible light and infrared light on the electrode that extracts light, and a conductive film that reflects both visible light and infrared light on the electrode that does not extract light.

[0531] Furthermore, a conductive film that transmits visible light may also be used on the electrode that does not extract light. In this case, it is preferable to place the electrode between the reflective layer and the EL layer 763. In other words, the light emitted from the EL layer 763 may be reflected by the reflective layer and extracted from the display device.

[0532] As materials for forming the pair of electrodes of a light-emitting device, metals, alloys, electrically conductive compounds, and mixtures thereof can be used as appropriate. Specifically, examples include indium tin oxide (In-Sn oxide, also called ITO), In-Si-Sn oxide (also called ITSO), indium zinc oxide (In-Zn oxide), In-W-Zn oxide, aluminum-containing alloys such as aluminum, nickel, and lanthanum alloys (Al-Ni-La), as well as silver-containing alloys such as silver-magnesium alloys and silver-palladium-copper alloys (Ag-Pd-Cu, also written as APC). In addition, metals such as aluminum (Al), magnesium (Mg), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys containing these in appropriate combinations can also be used. Furthermore, elements belonging to Group 1 or Group 2 of the periodic table not exemplified above (e.g., lithium (Li), cesium (Cs), calcium (Ca), strontium (Sr)), rare earth metals such as europium (Eu), ytterbium (Yb), and alloys containing these in appropriate combinations, graphene, and the like can also be used.

[0533] It is preferable that the light-emitting device has a microcavity structure. Therefore, it is preferable that one of the pair of electrodes in the light-emitting device has an electrode that is transparent to and reflective to visible light (a semi-transmissive / semi-reflective electrode), and the other has an electrode that is reflective to visible light (a reflective electrode). By having a microcavity structure in the light-emitting device, the light emitted from the light-emitting layer can be resonated between the two electrodes, thereby strengthening the light emitted from the light-emitting device.

[0534] Furthermore, semi-transmissive / semi-reflective electrodes can have a laminated structure consisting of a reflective electrode and an electrode that transmits visible light (also called a transparent electrode).

[0535] The light transmittance of the transparent electrode shall be 40% or more. For example, it is preferable to use an electrode in the light-emitting device that has a transmittance of 40% or more for visible light (light with a wavelength of 400 nm or more and less than 750 nm). The visible light reflectance of the semi-transparent / semi-reflective electrode shall be 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode shall be 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes shall be 1 × 10⁻⁶ -2 A value of Ωcm or less is preferable.

[0536] The light-emitting device may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-emitting device can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0537] The light-emitting layer may contain one or more types of light-emitting materials. The light-emitting materials may include those exhibiting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, or red, as appropriate. Furthermore, materials emitting near-infrared light may also be used as light-emitting materials.

[0538] Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0539] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0540] Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton; organometallic complexes (especially iridium complexes) using phenylpyridine derivatives having electron-withdrawing groups as ligands; platinum complexes; and rare earth metal complexes.

[0541] The light-emitting layer may contain one or more types of organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material). The one or more types of organic compounds may include one or both of materials with high hole transport properties (hole transport materials) and materials with high electron transport properties (electron transport materials). Furthermore, bipolar materials or TADF materials may be used as the one or more types of organic compounds.

[0542] The light-emitting layer preferably comprises, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that readily forms an excitation complex. This configuration allows for efficient emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the excitation complex to the light-emitting substance (phosphorescent material). By selecting a combination that forms an excitation complex that exhibits emission overlapping with the wavelength of the lowest-energy absorption band of the light-emitting substance, energy transfer becomes smoother, and light emission can be obtained efficiently. This configuration simultaneously achieves high efficiency, low-voltage operation, and a long lifespan for the light-emitting device.

[0543] The EL layer 763 may further include layers other than the light-emitting layer, such as a material with high hole injection properties, a material with high hole transport properties, a hole blocking material, a material with high electron transport properties, a material with high electron injection properties, an electron blocking material, or a bipolar material (a material with high electron transport and hole transport properties).

[0544] The hole injection layer is a layer that injects holes from the anode into the hole transport layer, and is a layer containing a material with high hole injection capabilities. Examples of materials with high hole injection capabilities include aromatic amine compounds and composite materials containing hole transport materials and acceptor materials (electron-accepting materials).

[0545] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. The hole transport layer is a layer containing a hole-transporting material. The hole-transporting material is 1 × 10⁻¹⁶ -6 cm 2 Materials having a hole mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher hole transport capabilities than electron transport. Preferred hole transport materials include π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines (compounds having an aromatic amine skeleton), which are materials with high hole transport capabilities.

[0546] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. The electron transport layer is a layer containing an electron-transporting material. The electron-transporting material is 1 × 10⁻¹⁶ -6 cm 2 Materials having an electron mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher electron transport capabilities than holes. Examples of electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds containing nitrogen-containing heteroaromatic compounds, which are all highly electron-transporting materials.

[0547] The electron injection layer is a layer that injects electrons from the cathode into the electron transport layer, and is a layer containing a substance with high electron injection properties. As the substance with high electron injection properties, an alkali metal, an alkaline earth metal, or a compound thereof can be used. As the substance with high electron injection properties, a composite material containing an electron transport material and a donor material (electron donating material) can also be used.

[0548] In addition, the lowest unoccupied molecular orbital (LUMO) level of the substance with high electron injection properties is preferably such that the difference from the work function value of the material used for the cathode is small (specifically, 0.5 eV or less).

[0549] For the electron injection layer, for example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF x , X is an arbitrary number), lithium 8-(quinolinolato) (abbreviation: Liq), lithium 2-(2-pyridyl)phenolato (abbreviation: LiPP), lithium 2-(2-pyridyl)-3-pyridinolato (abbreviation: LiPPy), lithium 4-phenyl-2-(2-pyridyl)phenolato (abbreviation: LiPPP), lithium oxide (LiO x ), an alkali metal such as cesium carbonate, an alkaline earth metal, or a compound thereof can be used. Further, the electron injection layer may have a laminated structure of two or more layers. Examples of the laminated structure include a configuration in which lithium fluoride is used for the first layer and ytterbium is provided for the second layer.

[0550] The electron injection layer may have an electron transport material. For example, a compound having an unshared electron pair and an electron-deficient heteroaromatic ring can be used as the electron transport material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and a triazine ring can be used.

[0551] Furthermore, the LUMO level of organic compounds containing lone pairs of electrons is preferably between -3.6 eV and -2.3 eV. In general, the highest occupied molecular orbital (HOMO) level and the LUMO level of organic compounds can be estimated by methods such as cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, and inverse photoelectron spectroscopy.

[0552] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviated as HATNA), and 2,4,6-tris[3'-(pyridine-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated as TmPPPyTz) can be used in organic compounds containing lone pairs of electrons. NBPhen has a higher glass transition temperature (Tg) and superior heat resistance compared to BPhen.

[0553] Furthermore, when fabricating a tandem light-emitting device, a charge generation layer (also called an intermediate layer) is provided between the two light-emitting units. The intermediate layer has the function of injecting electrons into one of the two light-emitting units and holes into the other when a voltage is applied between the pair of electrodes.

[0554] As the charge generation layer, for example, a material applicable to the electron injection layer, such as lithium, can be suitably used. Alternatively, as the charge generation layer, a material applicable to the hole injection layer can be suitably used. Furthermore, the charge generation layer can include a layer containing a hole transport material and an acceptor material (electron-accepting material). Alternatively, the charge generation layer can include a layer containing an electron transport material and a donor material. By forming such a charge generation layer, the increase in driving voltage when light-emitting units are stacked can be suppressed.

[0555] This embodiment can be combined with other embodiments as appropriate.

[0556] (Embodiment 5) This embodiment describes a light-receiving device and a display device having light-receiving and light-receiving functions that can be used in a display device according to one aspect of the present invention.

[0557] For example, a pn-type or pin-type photodiode can be used as the light-receiving device. The light-receiving device functions as a photoelectric conversion device (also called a photoelectric conversion element) that detects light incident on it and generates an electric charge. The amount of charge generated from the light-receiving device is determined by the amount of light incident on it.

[0558] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving device. Organic photodiodes can be easily made thinner, lighter, and larger in area, and because they offer a high degree of freedom in shape and design, they can be applied to various display devices.

[0559] [Light receiving device] As shown in Figure 28A, the photodetector has a layer 765 between a pair of electrodes (lower electrode 761 and upper electrode 762). The layer 765 has at least one active layer and may have other layers.

[0560] Furthermore, Figure 28B shows a modified example of the layer 765 of the photodetector shown in Figure 28A. Specifically, the photodetector shown in Figure 28B has a layer 766 on the lower electrode 761, an active layer 767 on the layer 766, a layer 768 on the active layer 767, and an upper electrode 762 on the layer 768.

[0561] The active layer 767 functions as a photoelectric conversion layer.

[0562] When the lower electrode 761 is the anode and the upper electrode 762 is the cathode, layer 766 has one or both of a hole transport layer and an electron blocking layer. Similarly, layer 768 has one or both of an electron transport layer and a hole blocking layer. When the lower electrode 761 is the cathode and the upper electrode 762 is the anode, layers 766 and 768 have the opposite configurations to those described above.

[0563] In one embodiment of the present invention, there may be a layer shared by both the light-receiving device and the light-emitting device (which can also be described as a continuous layer shared by both the light-receiving device and the light-emitting device). The function of such a layer may differ between the light-emitting device and the light-receiving device. In this specification, components may be referred to based on their function in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device. Furthermore, a layer shared by both the light-receiving device and the light-emitting device may have the same function in both the light-emitting device and the light-receiving device. A hole transport layer functions as a hole transport layer in both the light-emitting device and the light-receiving device, and an electron transport layer functions as an electron transport layer in both the light-emitting device and the light-receiving device.

[0564] Next, we will describe the materials that can be used in light-receiving devices.

[0565] The light-receiving device may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-receiving device can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0566] The active layer of a light-receiving device includes a semiconductor. Examples of such semiconductors include inorganic semiconductors such as silicon, and organic semiconductors containing organic compounds. In this embodiment, an example is shown in which an organic semiconductor is used as the semiconductor of the active layer. Using an organic semiconductor is preferable because the light-emitting layer and the active layer can be formed using the same method (for example, vacuum deposition), and the manufacturing equipment can be shared.

[0567] As for the n-type semiconductor material of the active layer, fullerene (for example, C 60 , C 70 Examples of electron-accepting organic semiconductor materials include fullerene derivatives. Examples of fullerene derivatives include [6,6]-Phenyl-C71-butyric acid methyl ester (abbreviated as PC70BM), [6,6]-Phenyl-C61-butyric acid methyl ester (abbreviated as PC60BM), and 1',1'',4',4''-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6]fullerene-C60 (abbreviated as ICBA).

[0568] Furthermore, examples of n-type semiconductor materials include perylenetetracarboxylic acid derivatives such as N,N'-dimethyl-3,4,9,10-perylenetetracarboxylic acid diimide (abbreviated as Me-PTCDI), and 2,2'-(5,5'-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)dimalonitrile (abbreviated as FT2TDMN).

[0569] Furthermore, examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0570] Examples of p-type semiconductor materials for the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), quinacridone, and rubrene.

[0571] Furthermore, examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. In addition, examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0572] The HOMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than that of electron-accepting organic semiconductor materials. The LUMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than that of electron-accepting organic semiconductor materials.

[0573] It is preferable to use spherical fullerenes as electron-accepting organic semiconductor materials and organic semiconductor materials with a near-planar shape as electron-donating organic semiconductor materials. Molecules with similar shapes tend to aggregate, and when molecules of the same type aggregate, their molecular orbital energy levels are close, which can improve carrier transport.

[0574] Furthermore, the active layer can use polymer compounds such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]]polymer (abbreviated as PBDB-T) or PBDB-T derivatives, which function as donors. For example, a method of dispersing the acceptor material in PBDB-T or a PBDB-T derivative can be used.

[0575] For example, the active layer is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor. Alternatively, the active layer may be formed by stacking an n-type semiconductor and a p-type semiconductor.

[0576] Furthermore, the active layer may use three or more types of materials. For example, to broaden the absorption wavelength range, a third material may be mixed with an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0577] The photodetector may further include layers other than the active layer, such as a material with high hole transport properties, a material with high electron transport properties, or a bipolar material (a material with high electron and hole transport properties). Furthermore, it may also further include layers containing a material with high hole injection properties, a hole blocking material, a material with high electron injection properties, or an electron blocking material. For example, the layers other than the active layer of the photodetector can be made of materials that can be used in the light-emitting devices described above.

[0578] For example, polymer compounds such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS), and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole transporting materials or electron blocking materials. In addition, inorganic compounds such as zinc oxide (ZnO) and organic compounds such as polyethyleneimine ethoxylate (PEIE) can be used as electron transporting materials or hole blocking materials. The light-receiving device may have, for example, a mixed film of PEIE and ZnO.

[0579] [Display device with light detection function] A display device according to one aspect of the present invention has a display unit in which light-emitting devices are arranged in a matrix, and an image can be displayed on the display unit. In addition, light-receiving devices are arranged in a matrix on the display unit, and the display unit has an image display function, as well as one or both of an imaging function and a sensing function. The display unit can be used as an image sensor or a touch sensor. That is, by detecting light on the display unit, an image can be captured, or the proximity or contact of an object (such as a finger, hand, or pen) can be detected.

[0580] Furthermore, in one embodiment of the present invention, the light-emitting device can be used as the light source for the sensor. In one embodiment of the present invention, when an object reflects (or scatters) the light emitted by the light-emitting device of the display unit, the light-receiving device can detect the reflected light (or scattered light), thus enabling imaging or touch detection even in dark places.

[0581] Therefore, it is not necessary to provide a light receiving unit and a light source separately from the display device, and the number of components in the electronic device can be reduced. For example, there is no need to separately provide a biometric authentication device or a capacitive touch panel for scrolling, etc., which are provided in the electronic device. Therefore, by using a display device according to one aspect of the present invention, it is possible to provide an electronic device with reduced manufacturing costs.

[0582] Specifically, a display device according to one aspect of the present invention has a light-emitting device and a light-receiving device in each pixel. In a display device according to one aspect of the present invention, an organic EL device is used as the light-emitting device and an organic photodiode is used as the light-receiving device. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated into a display device using an organic EL device.

[0583] In a display device having light-emitting and light-receiving devices in its pixels, the pixels have a light-receiving function, allowing for the detection of contact or proximity of an object while displaying an image. For example, in addition to displaying an image with all of the subpixels of the display device, some subpixels can emit light as a light source, some other subpixels can perform light detection, and the remaining subpixels can display an image.

[0584] When a light-receiving device is used as an image sensor, the display device can capture an image using the light-receiving device. For example, the display device of this embodiment can be used as a scanner.

[0585] For example, an image sensor can be used to capture images for personal authentication, such as fingerprints, palm prints, irises, pulse patterns (including vein and artery patterns), or faces.

[0586] For example, an image sensor can be used to image the area around the eyes, the surface of the eyes, or the inside of the eyes (such as the fundus) of the wearable device user. Therefore, the wearable device can be equipped with the ability to detect one or more of the user's blinking, pupil movement, and eyelid movement.

[0587] Furthermore, the light-receiving device can be used as a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, hover-touch sensor, non-contact sensor, or touchless sensor).

[0588] Here, the touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen).

[0589] A touch sensor can detect an object by making direct contact with the display device. A near-touch sensor can detect an object even if the object does not touch the display device. For example, it is preferable that the display device can detect an object when the distance between the display device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm. With this configuration, it becomes possible to operate the display device without the object directly touching it, in other words, it becomes possible to operate the display device without contact (touchless). With the above configuration, the risk of the display device becoming dirty or scratched can be reduced, or it becomes possible to operate the display device without the object directly touching any dirt (e.g., dust or viruses) attached to the display device.

[0590] Furthermore, a display device according to one aspect of the present invention can have a variable refresh rate. For example, power consumption can be reduced by adjusting the refresh rate according to the content displayed on the display device (for example, within a range of 1 Hz to 240 Hz). In addition, the drive frequency of the touch sensor or near touch sensor may be changed according to the refresh rate. For example, if the refresh rate of the display device is 120 Hz, the drive frequency of the touch sensor or near touch sensor can be set to a frequency higher than 120 Hz (typically 240 Hz). This configuration makes it possible to achieve low power consumption and to increase the response speed of the touch sensor or near touch sensor.

[0591] The display device 100 shown in Figures 28C to 28E has a layer 353 having a light-receiving device, a functional layer 355, and a layer 357 having a light-emitting device between substrates 351 and 359.

[0592] The functional layer 355 includes a circuit for driving a light-receiving device and a circuit for driving a light-emitting device. The functional layer 355 may include one or more of the following: switches, transistors, capacitors, resistors, wiring, and terminals. However, when the light-emitting device and light-receiving device are driven in a passive matrix manner, the configuration may be made without switches and transistors.

[0593] For example, as shown in Figure 28C, in layer 357 which has a light-emitting device, the light emitted by the light-emitting device is reflected by the finger 352 that is in contact with the display device 100, and the light-receiving device in layer 353 which has a light-receiving device detects the reflected light. This makes it possible to detect that the finger 352 has come into contact with the display device 100.

[0594] Furthermore, as shown in Figures 28D and 28E, the device may also have the function of detecting or imaging objects that are close to (i.e., not in contact with) the display device. Figure 28D shows an example of detecting a person's finger, and Figure 28E shows an example of detecting information around, on the surface of, or inside a person's eye (such as the number of blinks, eyeball movements, and eyelid movements).

[0595] This embodiment can be combined with other embodiments as appropriate.

[0596] (Embodiment 6) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to Figures 29 to 31.

[0597] The electronic device of this embodiment has a display device according to one aspect of the present invention in its display unit. The display device according to one aspect of the present invention is easily made high-definition and high-resolution. Therefore, it can be used in the display units of various electronic devices.

[0598] Examples of electronic devices include television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as other electronic devices with relatively large screens, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, and audio playback devices.

[0599] In particular, a display device according to one aspect of the present invention can be used suitably in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), as well as wearable devices that can be worn on the head, such as VR devices such as head-mounted displays, AR devices such as glasses, and MR devices.

[0600] A display device according to one aspect of the present invention preferably has an extremely high resolution such as HD (1280 x 720 pixels), FHD (1920 x 1080 pixels), WQHD (2560 x 1440 pixels), WQXGA (2560 x 1600 pixels), 4K (3840 x 2160 pixels), or 8K (7680 x 4320 pixels). In particular, a resolution of 4K, 8K, or higher is preferred. Furthermore, the pixel density (resolution) of the display device according to one aspect of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 7000 ppi or more. By using a display device that has either high resolution or high detail, or both, it becomes possible to further enhance the sense of presence and depth in personal electronic devices such as portable or home-use devices. Furthermore, there are no particular limitations on the screen ratio (aspect ratio) of the display device according to one embodiment of the present invention. For example, the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0601] The electronic device of this embodiment may have sensors (including those with the function of measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation).

[0602] The electronic device of this embodiment can have a variety of functions. For example, it can have a function to display various information (still images, videos, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, a function to execute various software (programs), a wireless communication function, a function to read programs or data recorded on a recording medium, and so on.

[0603] Figures 29A to 29D illustrate an example of a wearable device that can be worn on the head. These wearable devices have at least one of the following functions: a function to display AR content, a function to display VR content, a function to display SR content, and a function to display MR content. By having an electronic device that has the function to display at least one of the following content types, such as AR, VR, SR, and MR, it is possible to enhance the user's sense of immersion.

[0604] The electronic device 700A shown in Figure 29A and the electronic device 700B shown in Figure 29B each include a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0605] A display device according to one embodiment of the present invention can be applied to the display panel 751. Therefore, an electronic device capable of displaying extremely high resolution can be created.

[0606] Electronic devices 700A and 700B can project an image displayed on the display panel 751 onto the display area 756 of the optical element 753. Because the optical element 753 is translucent, the user can see the image displayed on the display area superimposed on the transmitted image visible through the optical element 753. Therefore, electronic devices 700A and 700B are electronic devices capable of AR display.

[0607] Electronic devices 700A and 700B may be equipped with cameras capable of capturing images of the area in front of them as imaging units. Furthermore, electronic devices 700A and 700B may each be equipped with acceleration sensors such as gyro sensors to detect the orientation of the user's head and display an image corresponding to that orientation in the display area 756.

[0608] The communications unit has a wireless communication device, which can supply video signals and the like. Alternatively, instead of the wireless communication device, or in addition to the wireless communication device, it may be equipped with a connector to which a cable supplying video signals and power potential can be connected.

[0609] Furthermore, electronic devices 700A and 700B are equipped with batteries that can be charged wirelessly, wired, or both.

[0610] The housing 721 may be equipped with a touch sensor module. The touch sensor module has the function of detecting when the outer surface of the housing 721 is touched. The touch sensor module can detect the user's tap or slide operations and perform various processes. For example, a tap operation can be used to pause or resume the video, and a slide operation can be used to fast forward or rewind. Furthermore, by providing a touch sensor module in each of the two housings 721, the range of operations can be expanded.

[0611] Various types of touch sensors can be applied to the touch sensor module. For example, various methods such as capacitive, resistive, infrared, electromagnetic induction, surface acoustic wave, and optical sensors can be used. In particular, it is preferable to apply a capacitive or optical sensor to the touch sensor module.

[0612] When using an optical touch sensor, a photoelectric conversion device (also called a photoelectric conversion element) can be used as the light-receiving device. The active layer of the photoelectric conversion device can be made of either an inorganic semiconductor or an organic semiconductor, or both.

[0613] The electronic device 800A shown in Figure 29C and the electronic device 800B shown in Figure 29D each include a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0614] A display device according to one embodiment of the present invention can be applied to the display unit 820. Therefore, an electronic device capable of displaying extremely high resolution can be created. This allows the user to experience a high level of immersion.

[0615] The display unit 820 is located inside the housing 821, in a position where it can be seen through the lens 832. Furthermore, by displaying different images on a pair of display units 820, a three-dimensional display using parallax can also be performed.

[0616] Electronic devices 800A and 800B can be described as electronic devices for VR. A user wearing either electronic device 800A or electronic device 800B can view the image displayed on the display unit 820 through the lens 832.

[0617] It is preferable that electronic devices 800A and 800B each have a mechanism that allows adjustment of the left and right positions of the lens 832 and the display unit 820 so that they are in the optimal position according to the user's eye position. It is also preferable that they have a mechanism that adjusts the focus by changing the distance between the lens 832 and the display unit 820.

[0618] The attachment portion 823 allows the user to attach the electronic device 800A or 800B to their head. While the attachment portion 823 is exemplified in Figure 29C and other figures as resembling the temples (or arms) of eyeglasses, it is not limited to this shape. The attachment portion 823 only needs to be wearable by the user; for example, it may be helmet-shaped or band-shaped.

[0619] The imaging unit 825 has the function of acquiring external information. The data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used in the imaging unit 825. In addition, multiple cameras may be provided to accommodate multiple angles of view, such as telephoto and wide-angle.

[0620] Although an example with an imaging unit 825 is shown here, any distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object can be provided. In other words, the imaging unit 825 is one form of a detection unit. As the detection unit, for example, an image sensor or a distance image sensor such as LiDAR (Light Detection and Ranging) can be used. By using the image obtained by the camera and the image obtained by the distance image sensor, more information can be acquired, enabling more accurate gesture control.

[0621] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration having such a vibration mechanism can be applied to one or more of the display unit 820, housing 821, and mounting unit 823. This allows users to enjoy video and audio simply by wearing the electronic device 800A, without needing separate audio equipment such as headphones, earphones, or speakers.

[0622] Electronic devices 800A and 800B may each have input terminals. Cables can be connected to the input terminals to supply video signals from video output devices, etc., and power for charging batteries provided within the electronic devices.

[0623] An electronic device according to one aspect of the present invention may have a function for wireless communication with an earphone 750. The earphone 750 has a communication unit (not shown) and has a wireless communication function. The earphone 750 can receive information (e.g., voice data) from the electronic device through its wireless communication function. For example, the electronic device 700A shown in Figure 29A has a function for transmitting information to the earphone 750 through its wireless communication function. Also, for example, the electronic device 800A shown in Figure 29C has a function for transmitting information to the earphone 750 through its wireless communication function.

[0624] Furthermore, the electronic device may have an earphone section. The electronic device 700B shown in Figure 29B has an earphone section 727. For example, the earphone section 727 and the control unit can be connected to each other by a wire. Part of the wiring connecting the earphone section 727 and the control unit may be located inside the housing 721 or the mounting section 723.

[0625] Similarly, the electronic device 800B shown in Figure 29D has an earphone unit 827. For example, the earphone unit 827 and the control unit 824 can be connected to each other by a wire. Part of the wiring connecting the earphone unit 827 and the control unit 824 may be located inside the housing 821 or the mounting unit 823. Also, the earphone unit 827 and the mounting unit 823 may have magnets. This allows the earphone unit 827 to be fixed to the mounting unit 823 by magnetic force, which is preferable as it facilitates storage.

[0626] Furthermore, the electronic device may have an audio output terminal to which earphones or headphones can be connected. The electronic device may also have an audio input terminal and / or an audio input mechanism. For example, a sound-collecting device such as a microphone can be used as the audio input mechanism. By having an audio input mechanism, the electronic device may be given the function of a so-called headset.

[0627] Thus, as one embodiment of the present invention, both eyeglass-type (electronic devices 700A and 700B, etc.) and goggle-type (electronic devices 800A and 800B, etc.) are preferred as electronic devices.

[0628] Furthermore, an electronic device according to one aspect of the present invention can transmit information to earphones via wired or wireless means.

[0629] The electronic device 6500 shown in Figure 30A is a portable information terminal that can be used as a smartphone.

[0630] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The display unit 6502 has a touch panel function.

[0631] A display device according to one aspect of the present invention can be applied to the display unit 6502.

[0632] Figure 30B is a schematic cross-sectional view of the housing 6501, including the end on the microphone 6506 side.

[0633] A light-transmitting protective member 6510 is provided on the display side of the housing 6501, and the display panel 6511, optical member 6512, touch sensor panel 6513, printed circuit board 6517, battery 6518, etc. are arranged in the space enclosed by the housing 6501 and the protective member 6510.

[0634] The protective member 6510 is fixed to the display panel 6511, the optical member 6512, and the touch sensor panel 6513 by an adhesive layer (not shown).

[0635] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back, and the FPC 6515 is connected to this folded portion. IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals provided on the printed circuit board 6517.

[0636] A flexible display according to one embodiment of the present invention can be applied to the display panel 6511. This makes it possible to realize an extremely lightweight electronic device. Furthermore, because the display panel 6511 is extremely thin, it is possible to incorporate a large-capacity battery 6518 while keeping the thickness of the electronic device low. In addition, by folding back a part of the display panel 6511 and placing the connection part with the FPC 6515 on the back of the pixel area, it is possible to realize an electronic device with a narrow bezel.

[0637] Figure 30C shows an example of a television system. The television system 7100 has a display unit 7000 incorporated into a housing 7101. Here, the housing 7101 is shown supported by a stand 7103.

[0638] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0639] The television device 7100 shown in Figure 30C can be operated using the operation switches on the housing 7101 and a separate remote control unit 7111. Alternatively, the display unit 7000 may be equipped with a touch sensor, and the television device 7100 can be operated by touching the display unit 7000 with a finger or the like. The remote control unit 7111 may have a display unit that displays information output from the remote control unit 7111. Channels and volume can be controlled and the image displayed on the display unit 7000 can be controlled using the operation keys or touch panel on the remote control unit 7111.

[0640] The television system 7100 is configured to include a receiver and a modem. The receiver can receive general television broadcasts. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0641] Figure 30D shows an example of a notebook personal computer. The notebook personal computer 7200 has a casing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. A display unit 7000 is incorporated into the casing 7211.

[0642] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0643] Figures 30E and 30F show examples of digital signage.

[0644] The digital signage 7300 shown in Figure 30E includes a housing 7301, a display unit 7000, and a speaker 7303, etc. Furthermore, it may include LED lamps, operation keys (including a power switch or operation switch), connection terminals, various sensors, a microphone, etc.

[0645] Figure 30F shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is provided along the curved surface of the column 7401.

[0646] In Figures 30E and 30F, a display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0647] The larger the display area 7000, the more information can be provided at once. Furthermore, a larger display area 7000 is more eye-catching, which can, for example, enhance the effectiveness of advertising.

[0648] Applying a touch panel to the display unit 7000 is preferable because it not only allows images or videos to be displayed on the display unit 7000, but also enables intuitive operation by the user. Furthermore, when used for purposes such as providing route information or traffic information, intuitive operation can enhance usability.

[0649] Furthermore, as shown in Figures 30E and 30F, it is preferable that the digital signage 7300 or digital signage 7400 can be linked wirelessly with an information terminal 7311 or information terminal 7411 such as a smartphone owned by the user. For example, the advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or information terminal 7411. Also, the display on the display unit 7000 can be switched by operating the information terminal 7311 or information terminal 7411.

[0650] Furthermore, the digital signage 7300 or digital signage 7400 can be used to run games using the screen of the information terminal 7311 or information terminal 7411 as the control device (controller). This allows an unspecified number of users to participate in and enjoy the game simultaneously.

[0651] The electronic equipment shown in Figures 31A to 31G includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or operation switch), connection terminals 9006, sensors 9007 (including functions for measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation), a microphone 9008, etc.

[0652] In Figures 31A to 31G, a display device according to one embodiment of the present invention can be applied to the display unit 9001.

[0653] The electronic devices shown in Figures 31A to 31G have various functions. For example, they may have functions to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date or time, a function to control processing by various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. However, the functions of electronic devices are not limited to these and can have various functions. Electronic devices may have multiple display units. Furthermore, electronic devices may be equipped with a camera, etc., and have functions to capture still images or videos and save them to a recording medium (external or built into the camera), a function to display the captured images on a display unit, etc.

[0654] Details of the electronic equipment shown in Figures 31A to 31G will be explained below.

[0655] Figure 31A is a perspective view showing a personal digital assistant (PDA) 9101. The PDA 9101 can be used, for example, as a smartphone. The PDA 9101 may also be equipped with a speaker 9003, connection terminals 9006, sensors 9007, etc. The PDA 9101 can also display text and image information on multiple surfaces. Figure 31A shows an example where three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the subject of an email or SNS message, the sender's name, date and time, time, battery level, signal strength, etc. Alternatively, icons 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0656] Figure 31B is a perspective view showing the personal digital assistant (PDA) 9102. The PDA 9102 has the function of displaying information on three or more sides of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, a user can check information 9053, which is displayed in a position that can be observed from above the PDA 9102, while the PDA 9102 is stored in the breast pocket of their clothing. The user can check the display without taking the PDA 9102 out of their pocket and decide, for example, whether or not to answer a call.

[0657] Figure 31C is a perspective view showing the tablet terminal 9103. The tablet terminal 9103 can run various applications, such as mobile phone calls, email, document viewing and creation, music playback, internet communication, and computer games. The tablet terminal 9103 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front of the housing 9000. The left side of the housing 9000 has operation keys 9005 as buttons for operation, and the bottom has connection terminals 9006.

[0658] Figure 31D is a perspective view showing a wristwatch-type personal information terminal 9200. The personal information terminal 9200 can be used, for example, as a smartwatch (registered trademark). The display unit 9001 has a curved display surface, allowing it to display information along the curved surface. The personal information terminal 9200 can also make hands-free calls by communicating with, for example, a wireless communication headset. Furthermore, the personal information terminal 9200 can transmit data to other information terminals and be charged via a connection terminal 9006. Charging may be performed by wireless power supply.

[0659] Figures 31E to 31G are perspective views showing a foldable personal information terminal 9201. Figure 31E shows the personal information terminal 9201 in an unfolded state, Figure 31G shows it in a folded state, and Figure 31F shows a perspective view of the state in between, transitioning from one of Figures 31E or 31G to the other. The personal information terminal 9201 offers excellent portability in its folded state and excellent readability of the display due to its seamless, wide display area in its unfolded state. The display unit 9001 of the personal information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm to 150 mm.

[0660] This embodiment can be combined with other embodiments as appropriate. [Explanation of Symbols]

[0661] IR: sub-pixel, Lin: light, 100A: display device, 100B: display device, 100C: display device, 100D: display device, 100E: display device, 100F: display device, 100G: display device, 100H: display device, 100: display device, 101: layer, 102: display unit, 103A: pixel unit, 103B: pixel unit, 105a: pixel, 105b: pixel, 105c: pixel, 105d: pixel, 105e: pixel, 105f: pixel, 110a: pixel, 110B: sub-pixel, 110b: pixel, 110c: pixel, 110d: pixel, 110G: sub-pixel, 110IR: sub-pixel, 110R: sub-pixel, 110S1: sub-pixel, 110S2: sub-pixel, 110: pixel, 111a: pixel electrode, 111b: pixel electrode, 111c: pixel electrode, 111d: pixel electrode, 111e: pixel electrode, 111f: pixel electrode, 112a: conductive layer, 112b: conductive layer, 112c: conductive layer, 113a: first layer, 113A: film, 113b: second layer, 113B: film, 113c: third layer, 113d: fourth layer, 114: common layer, 115: common electrode, 117: light-shielding layer, 118a: mask layer, 118A: mask film, 118b: mask layer, 118B: mask film, 118c: mask 118d: Mask layer, 119a: Mask layer, 119A: Mask film, 119b: Mask layer, 119B: Mask film, 120: Substrate, 121: Insulating layer, 122: Resin layer, 123: Conductive layer, 125A: Insulating film, 125: Insulating layer, 126a: Conductive layer, 126b: Conductive layer, 126c: Conductive layer, 127A: Insulating film, 127: Insulating layer, 128: Layer, 129a: Conductive layer, 129b: Conductive layer, 129c: Conductive layer, 130B: Light-emitting device, 130G: Light-emitting device, 130IR: Light-emitting device, 130R: Light-emitting device, 131: Protective layer, 132B: Colored layer, 132G: Colored layer, 132R: Colored layer, 132V: Colored layer, 133: Lens array, 134: Insulating layer, 135: Void, 140: Connection part, 142: Adhesive layer, 150a: Light receiving device, 150b: Light receiving device, 151: Substrate, 152: Substrate, 153: Insulating layer, 162: Display part, 164: Circuit, 165: Wiring, 166: Conductive layer, 172: FPC, 173: IC, 190A: Resist mask, 190B: Resist mask, 191: Mask, 192: Mask, 201: Transistor, 204: Connection part, 205: Transistor, 209: Transistor, 210: Transistor,211: Insulating layer, 213: Insulating layer, 214: Insulating layer, 215: Insulating layer, 218: Insulating layer, 221: Conductive layer, 222a: Conductive layer, 222b: Conductive layer, 223: Conductive layer, 225: Insulating layer, 231i: Channel formation region, 231n: Low resistance region, 231: Semiconductor layer, 240: Capacitance, 241: Conductive layer, 242: Connecting layer, 243: Insulating layer, 245: Conductive layer, 251: Conductive layer, 252: Conductive layer, 254: Insulating layer, 255a: Insulating layer, 255b: Insulating layer, 255c: Insulating layer, 256: Plug, 261: Insulating layer, 262: Insulating layer, 263: Insulating layer, 264: Insulating layer, 26 5: Insulating layer, 271: Plug, 274a: Conductive layer, 274b: Conductive layer, 274: Plug, 280: Display module, 281: Display section, 282: Circuit section, 283a: Pixel circuit, 283: Pixel circuit section, 284a: Pixel, 284: Pixel section, 285: Terminal section, 286: Wiring section, 290: FPC, 291: Substrate, 292: Substrate, 301A: Substrate, 301B: Substrate, 301: Substrate, 310A: Transistor, 310B: Transistor, 310: Transistor, 311: Conductive layer, 312: Low resistance region, 313: Insulating layer, 314: Insulating layer, 315: Element isolation layer, 320A: Transistor, 320B: Transistor, 320: Transistor, 321: Semiconductor layer, 323: Insulating layer, 324: Conductive layer, 325: Conductive layer, 326: Insulating layer, 327: Conductive layer, 328: Insulating layer, 329: Insulating layer, 331: Substrate, 332: Insulating layer, 335: Insulating layer, 336: Insulating layer, 341: Conductive layer, 342: Conductive layer, 343: Plug, 344: Insulating layer, 345: Insulating layer, 346: Insulating layer, 347: Bump, 348: Adhesive layer, 351: Substrate, 352: Finger, 353: Layer, 355: Functional layer, 357: Layer, 359: Substrate, 700A: Electronic equipment, 700B: Electronic equipment ,721: Housing, 723: Mounting part, 727: Earphone part, 750: Earphone, 751: Display panel, 753: Optical component, 756: Display area, 757: Frame, 758: Nose pad, 761: Lower electrode, 762: Upper electrode, 763a: EL layer, 763b: EL layer, 763: EL layer, 764: Layer, 765: Layer, 766: Layer, 767: Active layer, 768: Layer, 771: Light-emitting layer, 772: Light-emitting layer, 773: Light-emitting layer, 780: Layer, 781: Layer, 782: Layer, 785: Charge generation layer, 790: Layer, 791: Layer, 792: Layer, 800A: Electronic equipment, 800B: Electronic equipment,820: Display unit, 821: Housing, 822: Communication unit, 823: Mounting unit, 824: Control unit, 825: Imaging unit, 827: Earphone unit, 832: Lens, 6500: Electronic equipment, 6501: Housing, 6502: Display unit, 6503: Power button, 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 6510: Protective component, 6511: Display panel, 6512: Optical component, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 7000: Display unit, 7100: Television equipment, 7101: Housing, 7103: Stand, 7111: Remote control unit, 7200: Notebook personal computer, 721 1: Enclosure, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Enclosure, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 9000: Enclosure, 9001: Display unit, 9002: Camera, 9003: Speaker, 9005: Operation keys, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Portable information terminal, 9102: Portable information terminal, 9103: Tablet terminal, 9200: Portable information terminal, 9201: Portable information terminal,

Claims

[Claim 1] It has a first pixel, a second pixel, and a third pixel, The first to third pixels each have a first sub-pixel, a second sub-pixel, and a third sub-pixel, The first pixel and the second pixel share a fourth sub-pixel, The third pixel has a fifth sub-pixel, Full-color display is possible using the first to third sub-pixels, A display device in which the fourth sub-pixel and the fifth sub-pixel each have one of the following distinct devices: an infrared light emitting device, a first light receiving device, and a second light receiving device.

Images