Glass substrate

Abstract

The present invention provides a support glass substrate that is less prone to dimensional changes in the processed substrate and less likely to break when dropped, as well as a laminated substrate using the same. [Solution] The support glass substrate of the present invention is a support glass substrate for supporting a processed substrate, and is a lithium aluminosilicate glass, with a Li2O content of 0.02 to 25 mol% in the glass composition, and an average linear thermal expansion coefficient of 38 × 10 in the temperature range of 30 to 380°C. -7 / ℃ or higher, and 160×10 -7 It is characterized by being below / ℃.

Description

[Technical Field]

[0001] The present invention relates to a support glass substrate for supporting a processed substrate and a laminated substrate using the same, and more specifically, to a support glass substrate used to support a processed substrate in the manufacturing process of a semiconductor package (semiconductor device) and a laminated substrate using the same. [Background technology]

[0002] Portable electronic devices such as mobile phones, notebook computers, and smartphones are required to be miniaturized and lightweight. Consequently, the mounting space for semiconductor chips used in these devices is severely limited, making high-density mounting of semiconductor chips a challenge. Therefore, in recent years, three-dimensional mounting technology, which involves stacking semiconductor chips and connecting them with wiring, has been developed to achieve high-density mounting of semiconductor packages.

[0003] Furthermore, conventional wafer-level packages (WLPs) are manufactured by forming bumps on the wafer and then dicing them into individual pieces. However, conventional WLPs have problems such as difficulty in increasing the number of pins, and because the back surface of the semiconductor chip is exposed during mounting, chipping and other defects are more likely to occur in the semiconductor chip.

[0004] Therefore, a new type of WLP, the fan-out type, has been proposed. The fan-out type WLP allows for an increase in the number of pins and, by protecting the edges of the semiconductor chip, can prevent chipping and other damage to the semiconductor chip. And, [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] International Publication No. 2019 / 150654 [Patent Document 2] International Publication No. 2020 / 013984 [Disclosure of the Invention] [Problems that the invention aims to solve]

[0006] By the way, in a fan-out type WLP, after molding multiple semiconductor chips with a resin encapsulant to form a processed substrate, the process includes steps such as wiring on one surface of the processed substrate and forming solder bumps.

[0007] These processes involve heat treatment at approximately 200-300°C, which may cause deformation of the encapsulating material and dimensional changes in the processed substrate. Dimensional changes in the processed substrate make it difficult to achieve high-density wiring on one surface of the substrate, and also make it difficult to accurately form solder bumps.

[0008] Using a glass substrate as a support substrate is effective in suppressing dimensional changes in the processed substrate. However, even when using a glass substrate, dimensional changes in the processed substrate sometimes occurred.

[0009] Furthermore, if the WLP is accidentally dropped on the ground during manufacturing, the supporting glass substrate may break, rendering the expensive processed substrate unusable. To avoid such situations, it is important to increase the strength of the supporting glass substrate.

[0010] Lithium aluminosilicate glass is a promising material for high-strength glass substrates (see Patent Document 1). Lithium aluminosilicate glass generally has a higher Young's modulus than aluminoborosilicate glass, resulting in higher mechanical strength and a higher likelihood of breakage upon impact.

[0011] This invention has been made in view of the above circumstances, and its technical objective is to provide a support glass substrate that is less prone to dimensional changes in the processed substrate and less likely to break when dropped, and a laminated substrate using the same. [Means for solving the problem]

[0012] The inventors, after conducting various experiments, have found that the above technical problems can be solved by using lithium aluminosilicate glass as the support glass substrate and by restricting its thermal expansion coefficient to a predetermined range, and propose this as the present invention. Specifically, the support glass substrate of the present invention is a support glass substrate for supporting a processed substrate, is a lithium aluminosilicate glass, has a Li2O content of 0.02 to 25 mol% in the glass composition, and has an average linear thermal expansion coefficient of 38 × 10 in the temperature range of 30 to 380°C. -7 / ℃ or higher, and 160×10 -7 It is characterized by being below / ℃. Here, "lithium aluminosilicate glass" refers to glass containing SiO2, Al2O3, and Li2O in its glass composition. "Average linear thermal expansion coefficient in the temperature range of 30 to 380℃" refers to the value of the average thermal expansion coefficient measured using a dilatometer.

[0013] Furthermore, the support glass substrate of the present invention is a support glass substrate for supporting a processed substrate, and preferably contains, in mole percent, SiO2 50-80%, Al2O3 4-25%, B2O3 0-16%, Li2O 0.9-15%, Na2O 0-21%, K2O 0-15%, MgO 0-10%, ZnO 0-10%, and P2O 50-15%.

[0014] Furthermore, it is preferable that the supporting glass substrate of the present invention satisfies the relationship ([Na2O]-[Li2O]) / ([Al2O3]+[B2O3]+[P2O5])≦1.50. Here, [Na2O] refers to the molar percentage content of Na2O. [Li2O] refers to the molar percentage content of Li2O. [Al2O3] refers to the molar percentage content of Al2O3. [B2O3] refers to the molar percentage content of B2O3. [P2O5] refers to the molar percentage content of P2O5. ([Na2O]-[Li2O]) / ([Al2O3]+[B2O3]+[P2O5]) refers to the value obtained by dividing the amount obtained by subtracting the content of Li2O from the content of Na2O by the total amount of Al2O3, B2O3, and P2O5.

[0015] Furthermore, it is preferable that the supporting glass substrate of the present invention satisfies the relationship ([B2O3]+[Na2O]-[P2O5]) / ([Al2O3]+[Li2O])≧0.001. Here, ([Na2O]-[Li2O]) / ([Al2O3]+[B2O3]+[P2O5]) refers to the value obtained by dividing the amount obtained by subtracting the Li2O content from the Na2O content by the total amount of Al2O3, B2O3, and P2O5.

[0016] Furthermore, the supporting glass substrate of the present invention preferably contains 12 mol% or more of ([Li2O]+[Na2O]+[K2O]) and satisfies the relationship [SiO2]+1.2×[P2O5]-3×[Al2O3]-2×[Li2O]-1.5×[Na2O]-[K2O]-[B2O3]≧-40%. Here, [K2O] refers to the mol% content of K2O. [SiO2] refers to the mol% content of SiO2. ([Li2O]+[Na2O]+[K2O]) refers to the total amount of Li2O, Na2O, and K2O. [SiO2]+1.2×[P2O5]-3×[Al2O3]-2×[Li2O]-1.5×[Na2O]-[K2O]-[B2O3] refers to the value obtained by subtracting the amounts of three times the amount of Al2O3, twice the amount of Li2O, 1.5 times the amount of Na2O, the amount of K2O, and the amount of B2O3 from the sum of the amount of SiO2 and 1.2 times the amount of P2O5.

[0017] Furthermore, in the supporting glass substrate of the present invention, the high-temperature viscosity 10 2.5 It is preferable that the temperature at dPa·s is less than 1660°C. Here, "high temperature viscosity 10 2.5 The temperature in dPa·s can be measured, for example, by the platinum ball pulling method.

[0018] Furthermore, it is preferable that the supporting glass substrate of the present invention has an overflow confluence surface in the center in the thickness direction, that is, it is formed by the overflow downdraw method. Here, the "overflow downdraw method" is a method of manufacturing a glass substrate by allowing molten glass to overflow from both sides of a molded refractory body, and while the overflowed molten glass is brought together at the lower end of the molded refractory body, it is stretched downwards.

[0019] Furthermore, in the supporting glass substrate of the present invention, the mass loss per unit surface area when immersed in a 5% by mass HCl aqueous solution heated to 80°C for 24 hours is 100.0 mg / cm². 2 The following is preferable:

[0020] Furthermore, in the supporting glass substrate of the present invention, the mass loss per unit surface area when immersed in a 5% by mass NaOH aqueous solution heated to 80°C for 6 hours is 5.0 mg / cm². 2 The following is preferable:

[0021] Furthermore, the support glass substrate of the present invention preferably has a compressive stress layer on its glass surface. A known method for increasing the strength of a glass substrate is to chemically strengthen the glass substrate (see Patent Document 2). And, as a method for increasing the strength of a strengthened glass substrate, it is useful to increase the stress depth of the compressive stress layer. In detail, when a laminated substrate falls and collides with the ground, there is a risk that a protrusion on the ground will penetrate the support glass substrate and reach the tensile stress layer, leading to the support glass substrate breaking. Therefore, by increasing the stress depth of the compressive stress layer, it becomes more difficult for a protrusion on the ground to reach the tensile stress layer, and the probability of the support glass substrate breaking can be reduced.

[0022] Furthermore, the supporting glass substrate of the present invention preferably has a compressive stress layer on the glass surface and contains, in mole percent, SiO2 50-80%, Al2O3 4-25%, B2O3 0-16%, Li2O 0.9-15%, Na2O 0-21%, K2O 0-15%, MgO 0-10%, ZnO 0-10%, and P2O 50-15%.

[0023] Furthermore, in the supporting glass substrate of the present invention, it is preferable that the compressive stress value at the outermost surface of the compressive stress layer is 165 to 1000 MPa. Here, "compressive stress value at the outermost surface" and "stress depth" refer to values ​​measured from the phase difference distribution curve observed using, for example, a scattered light photoelastic stress meter SLP-1000 (manufactured by Orihara Seisakusho Co., Ltd.). The stress depth refers to the depth at which the stress value becomes zero. When calculating the stress characteristics, the refractive index of each measurement sample is assumed to be 1.51 and the optical elastic constant is assumed to be 30.1 [(nm / cm) / MPa].

[0024] Furthermore, in the supported glass substrate of the present invention, it is preferable that the stress depth of the compressive stress layer is 50 to 200 μm. Lithium aluminosilicate glass is advantageous in obtaining a deep stress depth. In particular, by immersing a glass substrate made of lithium aluminosilicate glass in a molten salt containing NaNO3 and performing ion exchange between Li ions in the glass and Na ions in the molten salt, a tempered glass substrate with a deep stress depth can be obtained.

[0025] Furthermore, the supporting glass substrate of the present invention preferably has a compressive stress layer on the glass surface, and its glass composition contains 17 mol% or more of Al2O3, 1 mol% or more of P2O5, and 12 mol% or more of ([Li2O]+[Na2O]+[K2O]), and satisfies the relationship [SiO2]+1.2×[P2O5]-3×[Al2O3]-2×[Li2O]-1.5×[Na2O]-[K2O]-[B2O3]≧-20 mol%.

[0026] Furthermore, in the supporting glass substrate of the present invention, it is preferable that the glass surface has a compressive stress layer, and the stress profile in the thickness direction has at least a first peak, a second peak, a first bottom, and a second bottom.

[0027] Furthermore, the support glass substrate of the present invention preferably has a wafer shape or a substantially disc shape with a diameter of 100 to 500 mm, a plate thickness of less than 2.0 mm, an overall plate thickness deviation (TTV) of 5 μm or less, and a warp amount of 60 μm or less. Here, "overall plate thickness deviation (TTV)" is the difference between the maximum and minimum plate thickness of the entire support glass substrate, and can be measured, for example, by the SBW-331ML / d manufactured by Kobelco Research Institute. "Warp amount" refers to the sum of the absolute value of the maximum distance between the highest point and the least squares focal plane and the absolute value of the distance between the lowest point and the least squares focal plane in the entire support glass substrate, and can be measured, for example, by the Bow / Warp measuring device SBW-331M / Ld manufactured by Kobelco Research Institute.

[0028] Furthermore, the supporting glass substrate of the present invention preferably has a substantially rectangular shape of 200 mm or more, a plate thickness of 1.0 mm or more, and an overall plate thickness deviation (TTV) of 30 μm or less.

[0029] Furthermore, the supporting glass substrate of the present invention preferably has a corner angle of 89.0 to 91.0° when viewed from above.

[0030] Furthermore, the support glass substrate of the present invention preferably has a positioning portion on its outer periphery, and it is even more preferable that the positioning portion is a notch structure, a chamfered structure, or a cutout structure.

[0031] The laminate of the present invention comprises at least a processed substrate and a support glass substrate for supporting the processed substrate, wherein the support glass substrate is preferably the support glass substrate described above. The processed substrate preferably comprises at least a semiconductor chip molded with a encapsulant.

[0032] The present invention provides a method for manufacturing a semiconductor package, comprising the steps of: preparing a laminate comprising at least a processed substrate and a support glass substrate for supporting the processed substrate; and performing a processing treatment on the processed substrate, wherein the support glass substrate is preferably the support glass substrate described above.

[0033] In addition, in the method for manufacturing a semiconductor package of the present invention, it is preferable that the processing includes a step of wiring on one surface of the processed substrate.

[0034] In addition, in the method for manufacturing a semiconductor package of the present invention, it is preferable that the processing includes a step of forming solder bumps on one surface of the processed substrate.

[0035] The glass substrate of the present invention contains, in mol%, 50 to 65% of SiO2, 8 to 25% of Al2O3, 0 to 10% of B2O3, 5.1 to 20% of Li2O, more than 10 to 16.1% of Na2O, 0 to 15% of K2O, 0.01 to 3% of MgO, 0 to 10% of CaO, 0.01 to 10% of ZrO2 as a glass composition, and is characterized in that the Young's modulus is 80 GPa or more. Here, the "Young's modulus" refers to a value calculated by a method conforming to JIS R1602-1995 "Test Method for Elastic Modulus of Fine Ceramics".

[0036] In addition, the glass substrate of the present invention contains, in mol%, 50 to 65% of SiO2, 8 to 18% of Al2O3, 0 to 10% of B2O3, 20 to 25% of Li2O, 0.01 to 10% of Na2O, 0 to 15% of K2O, 0 to 10% of MgO, 0.01 to 10% of CaO, 0 to 10% of ZrO2 as a glass composition, and the Young's modulus is 85 GPa or more, and the fracture toughness K IC is 0.80 MPa·m 0.5 or more. Here, the "fracture toughness K 1C " refers to a value calculated by a method conforming to JIS R1607-2015 "Test Method for Room Temperature Fracture Toughness of Fine Ceramics".

[0037] The glass substrate of the present invention contains, in mol%, 64 to 76% of SiO2, 4 to 15% of Al2O3, 4 to 16% of B2O, 0.1 to 14% of Li2O, 0.01 to 14% of Na2O, 0 to 15% of K2O, 0 to 7% of MgO, 0 to 7% of CaO, 0 to 7% of SrO, 0 to 7% of BaO, 0 to 10% of ZrO2 as a glass composition, and the Young's modulus is 60 GPa or more, and the average linear thermal expansion coefficient in the temperature range of 30 to 380 °C is 38×10 -7 / °C or more, and 85×10-7 It is characterized by being below / ℃.

[0038] Furthermore, the glass substrate of the present invention has a glass composition containing, in molar percent, SiO2 64-76%, Al2O3 4-15%, B2O3 4-16%, Li2O 0.1-14%, Na2O 0.01-14%, K2O 0-15%, MgO 0.01-7%, CaO 0.01-7%, SrO 0-7%, BaO 0-7%, and ZrO2 0-10%, with a Young's modulus of 60 GPa or higher and an average linear thermal expansion coefficient of 38 × 10 in the temperature range of 30-380°C. -7 / ℃ or higher, and 85×10 -7 It is characterized by being below / ℃.

[0039] Furthermore, the glass substrate of the present invention has a glass composition containing, in mole percent, SiO2 64-76%, Al2O3 4-15%, B2O3 4-16%, Li2O 0.1-14%, Na2O 0.01-14%, K2O 0-15%, MgO 0-7%, CaO 0-7%, SrO 0.01-7%, BaO 0-7%, and ZrO 20-10%, with a Young's modulus of 60 GPa or higher and an average linear thermal expansion coefficient of 38 × 10 in the temperature range of 30-380°C. -7 / ℃ or higher, and 85×10 -7 It is characterized by being below / ℃.

[0040] Furthermore, the glass substrate of the present invention has a glass composition containing, in mole percent, SiO2 64-76%, Al2O3 4-15%, B2O3 4-16%, Li2O 0.1-14%, Na2O 0.01-14%, K2O 0-15%, MgO 0.01-7%, CaO 0.01-7%, SrO 0.01-7%, BaO 0-7%, and ZrO2 0-10%, with a Young's modulus of 60 GPa or higher and an average linear thermal expansion coefficient of 38 × 10 in the temperature range of 30-380°C. -7 / ℃ or higher, and 85×10 -7 It is characterized by being below / ℃.

[0041] Furthermore, the glass substrate of the present invention has a glass composition containing, in mole percent, SiO2 64-76%, Al2O3 4-15%, B2O3 4-16%, Li2O 1.5-8.5%, Na2O 0.01-14%, K2O 0-15%, MgO 0.01-7%, CaO 0.01-7%, SrO 0.01-7%, BaO 0-7%, and ZrO2 0-10%, with a Young's modulus of 60 GPa or higher and an average linear thermal expansion coefficient of 38 × 10 in the temperature range of 30-380°C. -7 / ℃ or higher, and 85×10 -7 It is characterized by being below / ℃. [Brief explanation of the drawing]

[0042] [Figure 1] A conceptual perspective view showing an example of the multilayer substrate of the present invention. [Figure 2] This is a conceptual cross-sectional view showing the manufacturing process of a fan-out type WLP. [Figure 3] This is a conceptual cross-sectional view showing a process for thinning a processed substrate by using a support glass substrate as a backgrind substrate. [Figure 4] This is an explanatory diagram illustrating a stress profile having a first peak, a second peak, a first bottom, and a second bottom. [Figure 5] This is another explanatory diagram illustrating a stress profile having a first peak, a second peak, a first bottom, and a second bottom. [Modes for carrying out the invention]

[0043] The supporting glass substrate of the present invention is a lithium aluminosilicate glass, with a Li2O content of 0.02 to 25 mol% in the glass composition. Li2O is a component that reduces high-temperature viscosity and improves meltability and moldability, as well as Young's modulus and fracture toughness K 1cIt is an ingredient that enhances [something]. It is also an ingredient necessary to increase the coefficient of thermal expansion. Furthermore, Li2O is an ion exchange component, and is an essential ingredient for obtaining a deep stress depth by ion exchange between Li ions contained in the glass and Na ions in the molten salt. On the other hand, if the Li2O content is too high, the devitrification of the glass increases, making it difficult to obtain transparent glass and also increasing manufacturing costs. Therefore, the preferred lower limit range for Li2O is 0.02 mol% or more, 0.03 mol% or more, 0.04 mol% or more, 0.05 mol% or more, 0.1 mol% or more, 0.2 mol% or more, 0.3 mol% or more, 0.4 mol% or more, 0.5 mol% or more, 0.9 mol% or more, 1 mol% or more, 1.5 mol% or more, 2 mol% or more, 3 mol% or more, 4 mol% or more, 4.5 mol% or more, 4.9 mol% or more, 5 mol% or more, 5.1 mol% or more, 5.2 mol% or more, 5.5 mol% or more, 6.5 mol% or more, 7 mol% or more, 7.3 mol% or more, 7.5 mol% or more, 7.8 mol% or more, and especially 8 mol% or more. 1c When prioritizing the enhancement of [specific characteristic], the Li2O content should be 15% or more, particularly 20% or more. Therefore, the suitable upper limits for Li2O are 25 mol% or less, 24 mol% or less, 23 mol% or less, 22 mol% or less, 21 mol% or less, 20.5 mol% or less, 20.1 mol% or less, 20 mol% or less, 19.9 mol% or less, 19.8 mol% or less, 19 mol% or less, 18 mol% or less, 17 mol% or less, 16 mol% or less, 15 mol% or less, 13 mol% or less, 12 mol% or less, 11.5 mol% or less, 11 mol% or less, 10.5 mol% or less, less than 10 mol%, 9.9 mol% or less, 9 mol% or less, 8.9 mol% or less, and particularly 8.5% or less.

[0044] The thermal expansion coefficient of the support glass substrate is preferably regulated to match the thermal expansion coefficient of the processed substrate. Specifically, when the proportion of semiconductor chips in the processed substrate is small and the proportion of encapsulant is large, it is preferable to increase the thermal expansion coefficient of the support glass substrate. Conversely, when the proportion of semiconductor chips is large and the proportion of encapsulant is small, it is preferable to decrease the thermal expansion coefficient of the support glass substrate. Therefore, the average linear thermal expansion coefficient of the support glass substrate in the temperature range of 30 to 380°C is 38 × 10⁻⁶. -7 / ℃ or higher, and 160×10 -7 Preferably below / ℃, 45 × 10 -7 / ℃ or higher, and 155×10 -7 / ℃ or below, 50×10 -7 / ℃ or higher, and 150×10 -7 / ℃ or below, 55×10 -7 / ℃ or higher, and 140×10 -7 / ℃ or below, 60×10 -7 / ℃ or higher, and 130×10 -7 / ℃ or below, 65×10 -7 / ℃ or higher, and 120×10 -7 / ℃ or below, 65×10 -7 / ℃ or higher, and 110 × 10 -7 / ℃ or below, 70×10 -7 / ℃ or higher, and 105 × 10 -7 / ℃ or below, 75×10 -7 / ℃ or higher, and 100 × 10 -7 / ℃ or below, 80×10 -7 / ℃ or higher, and 99 × 10 -7 / ℃ or below, 85×10 -7 / ℃ or higher, and 98 × 10 -7 A temperature of 7°C or lower is preferred, and in particular, 87 × 10°C -7 / ℃ or higher, and 96 × 10 -7 A temperature of / °C or lower is preferable. Note that "thermal expansion coefficient at 30-380°C" refers to the value obtained by measuring the average thermal expansion coefficient using a dilatometer.

[0045] The supporting glass substrate of the present invention preferably contains, in molar percentages, SiO2 50-80%, Al2O3 4-25%, B2O3 0-16%, Li2O 0.9-15%, Na2O 0-21%, K2O 0-15%, MgO 0-10%, ZnO 0-10%, and P2O 50-15%. In the following descriptions of the content ranges of each component, the percentage indicates mole percentage.

[0046] SiO2 is a component that forms the network of glass. If the SiO2 content is too low, vitrification becomes difficult, and the coefficient of thermal expansion becomes too high, easily reducing thermal shock resistance. Therefore, the preferred lower limit range for SiO2 is 50% or more, 55% or more, 57% or more, 59% or more, and especially 61% or more. On the other hand, if the SiO2 content is too high, meltability and moldability tend to decrease, and the coefficient of thermal expansion becomes too low, making it difficult to match the coefficient of thermal expansion of the surrounding material. Therefore, the preferred upper limit range for SiO2 is 80% or less, 70% or less, 68% or less, 66% or less, 65% or less, and especially 64.5% or less.

[0047] Al2O3 is a component that increases strain point, Young's modulus, fracture toughness, and Vickers hardness, and also enhances ion exchange performance. Therefore, the preferred lower limit range for Al2O3 is 4% or more, 8% or more, 10% or more, 12% or more, 13% or more, 14% or more, 14.4% or more, 15% or more, 15.3% or more, 15.6% or more, 16% or more, 16.5% or more, 17% or more, 17.5% or more, 18% or more, and especially 18.5% or more. On the other hand, if the Al2O3 content is too high, the high-temperature viscosity increases, and meltability and moldability tend to decrease. Also, devitrified crystals tend to precipitate in the glass, making it difficult to form into a plate shape by methods such as the overflow downdraw method. In particular, when using alumina-based refractories as the refractory material for the molded body and forming a glass substrate by the overflow down-draw method, devitrified spinel crystals tend to precipitate at the interface with the alumina-based refractory material. Furthermore, acid resistance decreases, making it difficult to apply to acid treatment processes. Therefore, the preferred upper limits for Al2O3 are 25% or less, 21% or less, 20.5% or less, 20% or less, 19.9% ​​or less, 19.5% or less, 19.0% or less, and especially 18.9% or less. By keeping the Al2O3 content, which has a significant impact on ion exchange performance, within a preferred range, it becomes easier to form a profile with a first peak, a second peak, a first bottom, and a second bottom.

[0048] B2O3 is a component that reduces high-temperature viscosity and density, stabilizes the glass, makes crystal precipitation difficult, and lowers the liquidus temperature. If the B2O3 content is too low, the glass may become unstable and its resistance to devitrification may decrease. Therefore, the preferred lower limit range for B2O3 is 0% or more, 0.1% or more, 0.2% or more, 0.5% or more, 0.6% or more, 0.7% or more, 0.8% or more, 0.9% or more, and especially 1% or more. On the other hand, if the B2O3 content is too high, the stress depth may become shallow. In particular, the efficiency of ion exchange between Na ions contained in the glass and K ions in the molten salt tends to decrease, and the stress depth of the compressive stress layer (DOL_ZERO K The ) tends to become smaller. Therefore, the suitable upper limits for B2O3 are 16% or less, 14% or less, 12% or less, 10% or less, 5% or less, 4% or less, 3.8% or less, 3.5% or less, 3.3% or less, 3.2% or less, 3.1% or less, 3% or less, and especially 2.9% or less. If the B2O3 content is within the suitable range, it becomes easier to form a profile having a first peak, a second peak, a first bottom, and a second bottom.

[0049] The Li2O content and effects are as described above.

[0050] Na2O is an ion exchange component and also a component that reduces high-temperature viscosity, thereby improving meltability and moldability. Furthermore, Na2O is a component that enhances devitrification resistance, and is particularly effective in suppressing devitrification that occurs in reactions with alumina-based refractories. In addition, Na2O is a component that increases the coefficient of thermal expansion. Therefore, the suitable lower limit range for Na2O is greater than 0%, 3% or more, 4% or more, 5% or more, 6% or more, 7% or more, 7.5% or more, 8% or more, 8.5% or more, 8.8% or more, 9% or more, and especially greater than 10%. On the other hand, if the Na2O content is too high, the coefficient of thermal expansion becomes too high, and thermal shock resistance tends to decrease. Also, the balance of components in the glass composition may be disrupted, which may actually decrease devitrification resistance. Therefore, the suitable upper limit range for Na2O is 21% or less, 20% or less, 19% or less, especially 18% or less, 16.1% or less, 14% or less, 15% or less, 13% or less, and especially 11% or less.

[0051] K2O is a component that reduces high-temperature viscosity and improves meltability and moldability. However, if the K2O content is too high, the coefficient of thermal expansion becomes too high, which tends to reduce thermal shock resistance. It also tends to decrease the compressive stress value at the outermost surface. Furthermore, K2O is a component that increases the coefficient of thermal expansion. Therefore, the suitable upper limit range for K2O is 15% or less, 10% or less, 7% or less, 6% or less, 5% or less, 4% or less, 3% or less, 2% or less, 1.5% or less, 1% or less, less than 1%, 0.5% or less, and especially less than 0.1%. If emphasis is placed on increasing stress depth, the suitable lower limit range for K2O is 0% or more, 0.1% or more, 0.3% or more, and especially 0.5% or more.

[0052] The molar ratio [Li2O] / ([Na2O]+[K2O]) is preferably 0.0-15.4, 0.1-10.0, 0.2-5.0, 0.3-3.0, 0.4-1.0, 0.5-0.9, and particularly 0.6-0.8. If the molar ratio [Li2O] / ([Na2O]+[K2O]) is too small, the ion exchange performance may not be fully realized. In particular, the efficiency of ion exchange between Li ions contained in the glass and Na ions in the molten salt tends to decrease. On the other hand, if the molar ratio [Li2O] / ([Na2O]+[K2O]) is too large, devitrified crystals tend to precipitate in the glass, making it difficult to form into a plate shape by methods such as the overflow downdraw method. Note that "[Li2O] / ([Na2O]+[K2O])" refers to the value obtained by dividing the Li2O content by the total amount of Na2O and K2O.

[0053] MgO is a component that lowers high-temperature viscosity, improves melting and moldability, and increases strain point and Vickers hardness. Among alkaline earth metal oxides, it is a component that has a significant effect on improving ion exchange performance. However, if the MgO content is too high, the devitrification resistance tends to decrease, and it becomes difficult to suppress devitrification that occurs in reactions with alumina-based refractories in particular. Therefore, the preferred MgO content is 0-10%, 0.01-7%, 0.05-5%, 0.1-4%, 0.2-3.5%, and especially less than 0.5-3%.

[0054] ZnO is a component that enhances ion exchange performance, and is particularly effective in increasing the compressive stress value at the outermost surface. It is also a component that reduces high-temperature viscosity without reducing low-temperature viscosity. The preferred lower limit range for ZnO is 0% or more, 0.1% or more, 0.3% or more, 0.5% or more, 0.7% or more, and especially 1% or more. On the other hand, if the ZnO content is too high, the glass tends to split into phases, its devitrification resistance decreases, its density increases, and its stress depth decreases. Therefore, the preferred upper limit range for ZnO is 10% or less, 6% or less, 5% or less, 4% or less, 3% or less, 2% or less, 1.5% or less, 1.3% or less, 1.2% or less, and especially 1.1% or less.

[0055] P2O5 is a component that enhances ion exchange performance, and in particular, deepens stress depth. Furthermore, it also improves acid resistance. If the P2O5 content is too low, the ion exchange performance may not be fully realized. In particular, the efficiency of ion exchange between Na ions in the glass and K ions in the molten salt tends to decrease, leading to a reduced stress depth in the compressive stress layer (DOL_ZERO). K The compressive stress value (CS) of the compressive stress layer tends to decrease. Also, the glass may become unstable, and its resistance to devitrification may decrease. Therefore, the suitable lower limit range for P2O5 is 0% or more, 0.1% or more, 0.4% or more, 0.7% or more, 1% or more, 1.2% or more, 1.4% or more, 1.6% or more, 2% or more, 2.3% or more, 2.5% or more, and especially 3% or more. On the other hand, if the P2O5 content is too high, the glass is more likely to split into phases or its water resistance to decrease. Also, the stress depth in the ion exchange between Li ions contained in the glass and Na ions in the molten salt becomes too deep, and as a result the compressive stress value (CS) of the compressive stress layer becomes too high. Na The ) tends to become smaller. Therefore, the suitable upper limits for P2O5 are 15% or less, 10% or less, 5% or less, 4.5% or less, and especially 4% or less. If the P2O5 content is within the suitable range, it becomes easier to form a non-monotonic profile.

[0056] Alkali metal oxides are components that reduce high-temperature viscosity and improve melting and moldability, and they are also ion exchange components. Therefore, the preferred lower limit range for alkali metal oxides ([Li2O]+[Na2O]+[K2O]) is 5% or more, 6% or more, 7% or more, 8% or more, 9% or more, 10% or more, 11% or more, 12% or more, 13% or more, 14% or more, and especially 15% or more. However, if the alkali metal oxide content ([Li2O]+[Na2O]+[K2O]) is too high, there is a risk that the coefficient of thermal expansion will increase. There is also a risk that the acid resistance will decrease. Therefore, the preferred upper limit range for alkali metal oxides ([Li2O]+[Na2O]+[K2O]) is 28% or less, 25% or less, 23% or less, 20% or less, 19% or less, and especially 18% or less.

[0057] The molar ratio [Li2O] / [P2O5] is preferably 0 or greater, 0.1-30, 0.5-29, 0.9-28, 3.8-27, 4-26, 10-25, and particularly 15-20. If the molar ratio [Li2O] / [P2O5] is too small, the efficiency of ion exchange between Li ions in the glass and Na ions in the molten salt tends to decrease. On the other hand, if the molar ratio [Li2O] / [P2O5] is too large, devitrified crystals tend to precipitate in the glass, making it difficult to form into a plate shape using methods such as the overflow downdraw method. Note that "[Li2O] / [P2O5]" refers to the value obtained by dividing the Li2O content by the P2O5 content.

[0058] The molar ratio ([Na2O]-[Li2O]) / ([Al2O3]+[B2O3]+[P2O5]) is preferably 1.50 or less, 0.70 or less, 0.50 or less, 0.30 or less, 0.29 or less, 0.27 or less, 0.26 or less, 0.25 or less, 0.23 or less, 0.20 or less, and particularly 0.15 or less. If the molar ratio ([Na2O]-[Li2O]) / ([Al2O3]+[B2O3]+[P2O5]) is too large, there is a risk that the ion exchange performance will not be fully realized. In particular, the efficiency of ion exchange between Li ions contained in the glass and Na ions in the molten salt tends to decrease.

[0059] The molar ratio ([B2O3]+[Na2O]-[P2O5]) / ([Al2O3]+[Li2O]) is preferably 0.001 or higher, 0.05 or higher, 0.15 or higher, 0.25 or higher, 0.30 or higher, 0.35 or higher, 0.40 or higher, 0.42 or higher, 0.43 or higher, and particularly 0.45 or higher. If the molar ratio ([B2O3]+[Na2O]-[P2O5]) / ([Al2O3]+[Li2O]) is too low, devitrified crystals tend to precipitate in the glass, making it difficult to form into a plate shape using methods such as the overflow downdraw method.

[0060] The ratio ([SiO2]+1.2×[P2O5]-3×[Al2O3]-2×[Li2O]-1.5×[Na2O]-[K2O]-[B2O3]) is preferably -40% or more, -30% or more, -25% or more, -22% or more, and especially -20% or more. If ([SiO2]+1.2×[P2O5]-3×[Al2O3]-2×[Li2O]-1.5×[Na2O]-[K2O]-[B2O3]) is too small, the acid resistance tends to decrease. On the other hand, if ([SiO2]+1.2×[P2O5]-3×[Al2O3]-2×[Li2O]-1.5×[Na2O]-[K2O]-[B2O3]) is too large, there is a risk that the ion exchange performance will not be fully exhibited. Therefore, ([SiO2]+1.2×[P2O5]-3×[Al2O3]-2×[Li2O]-1.5×[Na2O]-[K2O]-[B2O3]) is preferably 50% or less, 40% or less, 30% or less, 20% or less, 15% or less, 10% or less, 5% or less, and especially 0% or less.

[0061] In addition to the above ingredients, the following ingredients may also be added, for example.

[0062] Compared to other components, CaO is a component that reduces high-temperature viscosity without compromising devitrification resistance, thereby improving melting and moldability, as well as increasing strain point and Vickers hardness. However, if the CaO content is too high, it may reduce ion exchange performance or degrade the ion exchange solution during ion exchange treatment. Therefore, the preferred upper limits for CaO are 10% or less, 8% or less, 7% or less, 6% or less, 5% or less, 4% or less, 3.5% or less, 3% or less, 2% or less, 1% or less, less than 1%, 0.5% or less, and especially less than 0.01 to 0.1%.

[0063] SrO and BaO are components that reduce high-temperature viscosity, improve meltability and moldability, and increase strain point and Young's modulus. However, if their content is too high, ion exchange reactions are easily inhibited, and the density and thermal expansion coefficient become unduly high, and the glass becomes more prone to devitrification. Therefore, the preferred content of SrO and BaO is 0-7%, 0-5%, 0-3%, 0-2%, 0-1.5%, 0-1%, 0-0.5%, and 0-0.1%, respectively, and especially less than 0.01-0.1%.

[0064] ZrO2 is a component that increases Vickers hardness, as well as viscosity and strain point near liquid-phase viscosity. However, if its content is too high, the resistance to devitrification may be significantly reduced. Therefore, the preferred ZrO2 content is 0-5%, 0-4%, 0-3%, 0-1.5%, 0-1%, and especially 0.01-0.1%.

[0065] TiO2 is a component that enhances ion exchange performance and reduces high-temperature viscosity, but if its content is too high, transparency and resistance to devitrification tend to decrease. Therefore, the preferred TiO2 content is 0-3%, 0-1.5%, 0-1%, 0-0.1%, and especially 0.001-0.1 mol%.

[0066] SnO2 is a component that enhances ion exchange performance, but if its content is too high, the resistance to devitrification tends to decrease. Therefore, the preferred lower limit range for SnO2 is 0.005% or more, 0.01% or more, and especially 0.1% or more, while the preferred upper limit range is 3% or less, 2% or less, and especially 1% or less.

[0067] Cl is a clarifying agent, but if its content is too high, it can have adverse effects on the environment and equipment. Therefore, the preferred lower limit for Cl is 0.001% or more, particularly 0.01% or more, and the preferred upper limit is 0.3% or less, 0.2% or less, particularly 0.1% or less.

[0068] As a clarifying agent, one or more selected from the group consisting of SO3 and CeO2 (preferably the group consisting of SO3) may be added in an amount of 0.001 to 1%.

[0069] Fe2O3 is an impurity that is inevitably present in the raw materials. The preferred upper limit range for Fe2O3 is 2000 ppm or less (0.2% or less), 1500 ppm or less (0.15% or less), less than 1000 ppm (less than 0.1%), less than 800 ppm, less than 600 ppm, less than 400 ppm, and especially less than 300 ppm. If the Fe2O3 content is too high, the transmittance of the cover glass tends to decrease. On the other hand, the preferred lower limit range for Fe2O3 is 10 ppm or more, 20 ppm or more, 30 ppm or more, 50 ppm or more, 80 ppm or more, and 100 ppm or more. If the Fe2O3 content is too low, high-purity raw materials must be used, which increases raw material costs and makes it impossible to manufacture the product cheaply.

[0070] Rare earth oxides such as Nd2O3, La2O3, Y2O3, Nb2O5, Ta2O5, and Hf2O3 are components that increase Young's modulus. However, they have high raw material costs, and adding large amounts tends to reduce devitrification resistance. Therefore, the preferred content of rare earth oxides is 5% or less, 3% or less, 2% or less, 1% or less, 0.5% or less, and especially 0.1% or less.

[0071] From an environmental perspective, the supporting glass substrate of the present invention preferably contains substantially no As2O3, Sb2O3, PbO, and F in its glass composition. Furthermore, from an environmental perspective, it is also preferable that it contains substantially no Bi2O3. "Substantially no" means that the explicitly stated components are not actively added as glass components, but the addition at impurity levels is permitted, and specifically refers to cases where the content of the explicitly stated components is less than 0.05%.

[0072] The supporting glass substrate of the present invention preferably has the following characteristics.

[0073] The supporting glass substrate of the present invention has a high-temperature viscosity of 10 2.5 The temperature at dPa·s is preferably less than 1800°C, and is preferably less than 1660°C, 1640°C or less, less than 1620°C, 1600°C or less, and particularly preferably between 1400 and 1590°C. High-temperature viscosity 10 2.5 If the temperature at dPa·s is too high, the meltability and moldability decrease, making it difficult to form the molten glass into a sheet.

[0074] The density is preferably 2.80 g / cm³. 3 Below 2.70g / cm 3 Below, 2.60g / cm 3 Below, 2.58g / cm 3 Below, 2.56g / cm 3 Below 2.55g / cm 3 Below, 2.53g / cm 3 Below 2.50g / cm 3 Below, 2.49g / cm 3 Below, 2.45g / cm 3 The following, in particular, are 2.35-2.44 g / cm³. 3 Therefore, the lower the density, the lighter the tempered glass substrate can be.

[0075] The softening point is preferably 985°C or lower, 970°C or lower, 950°C or lower, 930°C or lower, 900°C or lower, 880°C or lower, 860°C or lower, and particularly between 850°C and 700°C. Note that "softening point" refers to the value measured according to the ASTM C338 method.

[0076] The liquid phase viscosity is preferably 10 3.0 The above 10 3.2 The above 10 3.4 The above 10 3.6 The above 10 3.74 dPa·s or higher, 10 4.5 dPa·s or higher, 10 4.8 dPa·s or higher, 10 4.9 dPa·s or higher, 105.0 dPa·s or higher, 10 5.1 dPa·s or higher, 10 5.2 dPa·s or higher, 10 5.3 dPa·s or higher, 10 5.4 dPa·s or higher, especially 10 5.5 The viscosity is dPa·s or higher. Note that the higher the liquid-phase viscosity, the better the resistance to devitrification, and the less likely devitrified material is to occur during molding. Here, "liquid-phase viscosity" refers to the viscosity at liquid-phase temperature measured by the platinum ball pulling method. "Liquid-phase temperature" is defined as the highest temperature at which devitrification (devitrified material) is observed inside the glass after passing through a standard 30-mesh (500 μm) sieve and remaining in a 50-mesh (300 μm) sieve, placing the glass powder in a platinum boat, holding it in a temperature gradient furnace for 24 hours, removing the platinum boat, and observing it under a microscope.

[0077] The Young's modulus is preferably 63 GPa or higher, 65 GPa or higher, 68 GPa or higher, 70 GPa or higher, 74 GPa or higher, 75-100 GPa, 80-95 GPa, and especially 85-90 GPa. If the Young's modulus is low, the supporting glass substrate becomes more prone to breakage. Also, if the plate thickness is thin, the supporting glass substrate becomes more prone to bending.

[0078] Fracture toughness K 1c Preferably 0.80 MPa·m 0.5 More than 0.81MPa m 0.5 More than 0.82MPa m 0.5 More than 0.83MPa m 0.5 More than 0.84MPa m 0.5 The above, especially 0.85 MPa·m 0.5 That concludes the explanation. Fracture toughness K 1c If the value is low, the supporting glass substrate becomes more prone to breakage.

[0079] In the supporting glass substrate of the present invention, the mass loss per unit surface area when immersed in a 5% by mass HCl aqueous solution heated to 80°C for 24 hours is preferably 100.0 mg / cm². 2 Below, 90mg / cm 2 Below 80mg / cm 2 Below, 70mg / cm 2 Below 60mg / cm 2Less than 50 mg / cm 2 Less than 40 mg / cm 2 Less than 30 mg / cm 2 Less than, particularly less than 20 mg / cm 2 Less than. The support glass substrate may come into contact with acidic chemical solutions in the semiconductor package manufacturing process, and it is preferably highly acid-resistant from the perspective of preventing process failures.

[0080] The mass loss per unit surface area when immersed in a 5% by mass NaOH aqueous solution heated to 80 °C for 6 hours is preferably 5.0 mg / cm 2 ​​​​​​​​​​​​​​​​​​​​​​​​​​​​The supporting glass substrate of the present invention is preferably substantially rectangular in shape, with dimensions of 200 mm or more, 220 to 750 mm, and particularly 250 to 500 mm. This makes it easier to apply to the manufacturing process of fan-out type PLP (panel-level package). If necessary, it may be processed into other shapes, such as triangles or trapezoids.

[0084] The plate thickness is preferably less than 2.0 mm, 1.5 mm or less, 1.2 mm or less, 1.1 mm or less, 1.0 mm or less, and particularly 0.9 mm or less. As the plate thickness decreases, the mass of the laminated substrate decreases, improving handling. On the other hand, if the plate thickness is too thin, the strength of the support glass substrate itself decreases, making it difficult to perform its function as a support substrate. Therefore, the plate thickness is preferably 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, and particularly greater than 0.7 mm.

[0085] The overall plate thickness deviation (TTV) is preferably 5 μm or less, 4 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, and particularly less than 0.1 to 1 μm. The arithmetic mean roughness Ra is preferably 20 nm or less, 10 nm or less, 5 nm or less, 2 nm or less, 1 nm or less, and particularly less than 0.5 nm. The higher the surface accuracy, the easier it is to improve the accuracy of the processing. In particular, the wiring accuracy can be improved, making high-density wiring possible. Furthermore, the strength of the support glass substrate is improved, making the support glass substrate and laminated substrate less prone to breakage. In addition, the number of times the support glass substrate can be reused can be increased. The "arithmetic mean roughness Ra" can be measured by a stylus-type surface roughness meter or an atomic force microscope (AFM).

[0086] The amount of warpage is preferably 60 μm or less, 55 μm or less, 50 μm or less, 1 to 45 μm, and especially 5 to 40 μm. The smaller the amount of warpage, the easier it is to improve the precision of the processing. In particular, it is possible to improve the accuracy of the wiring, which enables high-density wiring.

[0087] For wafer-shaped or roughly disc-shaped wafers, the roundness is preferably 1 mm or less, 0.1 mm or less, 0.05 mm or less, and especially 0.03 mm or less. The smaller the roundness, the easier it is to apply to the manufacturing process of fan-out type WLPs. Note that "roundness" is the value obtained by subtracting the minimum value from the maximum value of the outer shape, excluding notch structures.

[0088] The support glass substrate of the present invention preferably has a positioning portion, which preferably has a notch structure, a chamfered structure, or a cutout structure, and is particularly preferably a notch structure, and the depth of the notch structure is more preferably substantially circular or substantially V-groove in plan view. This makes it easier to fix the position of the support glass substrate by bringing a positioning member, such as a positioning pin, into contact with the notch structure of the support glass substrate. As a result, the alignment of the support glass substrate and the processed substrate becomes easier. In particular, if a notch structure is also formed in the processed substrate and a positioning member is brought into contact with it, the alignment of the entire laminated substrate becomes easier. Note that the notch structure is prone to cracking because a positioning member comes into contact with it, but the support glass substrate of the present invention has high strength, so it is particularly effective when it has a notch structure.

[0089] When a positioning member is brought into contact with the notch structure of the support glass substrate, stress tends to concentrate in the notch structure, making the support glass substrate prone to breakage starting from the notch structure. This tendency is particularly pronounced when the support glass substrate is bent by an external force. Therefore, it is preferable that the support glass substrate of the present invention has all or part of the edge region where the surface and end face of the notch structure intersect beveled. This effectively prevents breakage starting from the notch structure.

[0090] The wafer-shaped or substantially disc-shaped support glass substrate of the present invention has all or part of the edge region where the surface and end face of the notch structure intersect beveled, preferably 50% or more of the edge region where the surface and end face of the notch structure intersect is beveled, more preferably 90% or more of the edge region where the surface and end face of the notch structure intersect is beveled, and even more preferably all of the edge region where the surface and end face of the notch structure intersect is beveled. The larger the area beveled in the notch structure, the lower the probability of breakage originating from the notch structure can be.

[0091] The chamfer width in the surface direction of the notch structure is preferably 50-900 μm, 200-800 μm, 300-700 μm, 400-650 μm, and particularly 500-600 μm. If the chamfer width in the surface direction of the notch structure is too small, the supporting glass substrate becomes prone to breakage starting from the notch structure. On the other hand, if the chamfer width in the surface direction of the notch structure is too large, the chamfering efficiency decreases, and the manufacturing cost of the supporting glass substrate tends to increase.

[0092] The chamfer width in the thickness direction of the notch structure is preferably 5-80%, 20-75%, 30-70%, 35-65%, and particularly 40-60% of the plate thickness. If the chamfer width in the thickness direction of the notch structure is too small, the supporting glass substrate is more likely to break starting from the notch structure. On the other hand, if the chamfer width in the thickness direction of the notch structure is too large, external forces tend to concentrate on the end face of the notch structure, and the supporting glass substrate is more likely to break starting from the end face of the notch structure.

[0093] When the support glass substrate is roughly rectangular in shape, the angles of the corners when viewed from above, i.e., when viewed from above, are preferably 89.0 to 91.0°, 89.1 to 90.9°, 89.2 to 90.8°, 89.3 to 90.7°, 89.4 to 90.6°, and especially 89.5 to 90.5°. The closer the corner angles are to 90°, the more accurately the support glass substrate can be positioned during transport.

[0094] The support glass substrate of the present invention preferably has an information identification section on its surface, the information identification section having dots as constituent units. The information identification section has one or more elements selected from characters, symbols, two-dimensional codes, and figures, and the elements are composed of multiple dots. The information identification section preferably includes at least one piece of information selected from the dimensions of the support glass substrate, the coefficient of linear thermal expansion, the lot number, the overall plate thickness deviation (TTV), the manufacturer's name, the seller's name, and the material code. Note that "dimensions" include the thickness dimension of the support glass substrate, the outer diameter dimension, the dimensions of the notch structure, etc.

[0095] The outer diameter of the dot is preferably 0.05 to 0.20 mm, 0.07 to 0.13 mm or less, and particularly 0.09 to 0.11 mm. If the outer diameter of the dot is too small, the visibility of the information identification area tends to decrease. On the other hand, if the outer diameter of the dot is too large, it becomes easier to ensure the strength of the supporting glass substrate.

[0096] The distance between the centers of adjacent dots is preferably 0.06 to 0.25 mm. If the distance between the centers of adjacent dots is too small, it becomes easier to ensure the strength of the supporting glass substrate. On the other hand, if the distance between the centers of adjacent dots is too large, the visibility of the information identification area tends to decrease.

[0097] The information identification unit is composed of dots, and preferably the shape of the dots is an annular groove. By making the shape of the dots an annular groove, the area enclosed by this annular groove (the area inside the groove) remains without being removed by the laser, thus preventing a reduction in the intensity of the area where the information identification unit is provided as much as possible. Furthermore, if the groove is an annular groove, even if the width of the groove is reduced as long as the outer diameter does not change, the visibility will not decrease significantly. Therefore, by reducing the width of the groove without changing the outer diameter, the area inside the groove can be increased accordingly, thereby ensuring visibility while maintaining the required intensity.

[0098] The groove depth for forming the dots is preferably 2 to 30 μm. If the groove depth is too small, the visibility of the information identification area tends to decrease. On the other hand, if the groove depth is too large, it becomes easier to ensure the strength of the supporting glass substrate.

[0099] The information identification area can be formed by various methods, but it is preferable to form the information identification area by irradiating it with a pulsed laser and ablating the glass in the irradiated area, that is, by laser ablation. In this way, ablation can be caused without accumulating excessive heat in the glass in the irradiated area. As a result, not only the length of cracks in the thickness direction but also the length of cracks extending from the dots in the surface direction can be reduced.

[0100] Preferably, the supporting glass substrate of the present invention is manufactured by preparing a glass batch by blending and mixing glass raw materials, then putting this glass batch into a glass melting furnace, clarifying and stirring the resulting molten glass, and then supplying it to a molding device to form it into a plate.

[0101] The support glass substrate of the present invention preferably has an overflow confluence surface in the center in the thickness direction. In the overflow downdraw method, the surface that is to become the surface of the support glass substrate does not come into contact with the trough-shaped refractory material and is formed in a free surface state. Therefore, the overall thickness deviation can be reduced to less than 2.0 μm, and especially to less than 1.0 μm, with only a small amount of polishing. As a result, the manufacturing cost of the support glass substrate can be reduced.

[0102] The support glass substrate of the present invention is preferably formed by the overflow down-draw method and then polished on the surface. This makes it easier to control the overall plate thickness deviation to less than 2.0 μm, 1.5 μm or less, 1.0 μm or less, and especially to less than 0.1 to 1.0 μm.

[0103] The supporting glass substrate of the present invention preferably has a compressive stress layer on its glass surface, and more preferably has a compressive stress layer formed by ion exchange. Forming a compressive stress layer on the glass surface makes it possible to reduce the probability of the supporting glass substrate breaking when the laminated substrate is dropped to the ground.

[0104] In the supported glass substrate of the present invention, the compressive stress value at the outermost surface of the compressive stress layer is preferably 165 to 1000 MPa, 200 MPa or more, 220 MPa or more, 250 MPa or more, 280 MPa or more, 300 MPa or more, 310 MPa or more, and particularly 320 MPa or more. The larger the compressive stress value at the outermost surface, the higher the Vickers hardness. On the other hand, if an extremely large compressive stress is formed on the surface, the tensile stress inherent in the supported glass substrate will become extremely high, and there is a risk that the dimensional change before and after ion exchange treatment will become large. For this reason, the compressive stress value at the outermost surface is preferably 1000 MPa or less, 900 MPa or less, 700 MPa or less, 680 MPa or less, 650 MPa or less, and particularly 600 MPa or less. Note that shortening the ion exchange time or lowering the temperature of the ion exchange solution tends to increase the compressive stress value at the outermost surface.

[0105] The stress depth of the compressive stress layer is preferably 50-200 μm, 50 μm or more, 60 μm or more, 80 μm or more, 100 μm or more, and particularly 120 μm or more. The deeper the stress depth, the less likely it is that a protrusion on the ground will reach the tensile stress layer of the supporting glass substrate when the laminated substrate is dropped, thereby reducing the probability of the supporting glass substrate breaking. On the other hand, if the stress depth is too deep, there is a risk of large dimensional changes before and after ion exchange treatment. Furthermore, the compressive stress value of the outermost surface tends to decrease. Therefore, the stress depth is preferably 200 μm or less, 180 μm or less, 150 μm or less, and particularly 140 μm or less. Note that increasing the ion exchange time or raising the temperature of the ion exchange solution tends to increase the stress depth.

[0106] It is preferable to perform the ion exchange treatment multiple times. Specifically, it is preferable to perform an ion exchange treatment by immersion in a molten salt containing KNO3 molten salt, followed by an ion exchange treatment by immersion in a molten salt containing NaNO3 molten salt. This method allows for increasing the compressive stress value at the outermost surface while ensuring a deep stress depth.

[0107] In particular, it is preferable to perform an ion exchange treatment (first ion exchange step) by immersing the substrate in a molten NaNO3 salt or a mixed molten NaNO3 and KNO3 salt, followed by an ion exchange treatment (second ion exchange step) by immersing it in a mixed molten KNO3 and LiNO3 salt. By doing so, it is possible to form a non-monotonous stress profile as shown in Figures 4 and 5, that is, a stress profile having at least a first peak, a second peak, a first bottom, and a second bottom. As a result, it becomes possible to significantly reduce the probability of the supporting glass substrate breaking when the laminated substrate is dropped.

[0108] In the first ion exchange step, Li ions contained in the glass exchange ions with Na ions in the molten salt. When a mixed molten salt of NaNO3 and KNO3 is used, Na ions contained in the glass also exchange ions with K ions in the molten salt. Here, the ion exchange between Li ions contained in the glass and Na ions in the molten salt is faster and more efficient than the ion exchange between Na ions contained in the glass and K ions in the molten salt. In the second ion exchange step, Na ions near the glass surface (a shallow region from the outermost surface to 20% of the plate thickness) exchange ions with Li ions in the molten salt. In addition, Na ions near the glass surface (a shallow region from the outermost surface to 20% of the plate thickness) exchange ions with K ions in the molten salt. That is, in the second ion exchange step, Na ions near the glass surface can be removed while K ions with a larger ionic radius can be introduced. As a result, the compressive stress value at the outermost surface can be increased while maintaining a deep stress depth.

[0109] In the first ion exchange step, the temperature of the molten salt is preferably 360 to 400°C, and the ion exchange time is preferably 30 minutes to 6 hours. In the second ion exchange step, the temperature of the ion exchange solution is preferably 370 to 400°C, and the ion exchange time is preferably 15 minutes to 3 hours.

[0110] In order to form a non-monotonic stress profile, it is preferable that the concentration of NaNO3 is higher than the concentration of KNO3 in the mixed molten salt of NaNO3 and KNO3 used in the first ion exchange step, and that the concentration of KNO3 is higher than the concentration of LiNO3 in the mixed molten salt of KNO3 and LiNO3 used in the second ion exchange step.

[0111] In the mixed molten salt of NaNO3 and KNO3 used in the first ion exchange step, the concentration of KNO3 is preferably 0% by mass or more, 0.5% by mass or more, 1% by mass or more, 5% by mass or more, 7% by mass or more, 10% by mass or more, 15% by mass or more, and particularly 20 to 90% by mass. If the concentration of KNO3 is too high, there is a risk that the compressive stress value formed when Li ions contained in the glass and Na ions in the molten salt exchange will decrease too much. On the other hand, if the concentration of KNO3 is too low, there is a risk that stress measurement using the surface stress meter FSM-6000 will become difficult.

[0112] In the mixed molten salt of KNO3 and LiNO3 used in the second ion exchange step, the concentration of LiNO3 is preferably greater than 0 to 5% by mass, greater than 0 to 3% by mass, greater than 0 to 2% by mass, and particularly 0.1 to 1% by mass. If the concentration of LiNO3 is too low, it becomes difficult for Na ions to detach near the glass surface. On the other hand, if the concentration of LiNO3 is too high, there is a risk that the compressive stress value formed by ion exchange between Na ions near the glass surface and K ions in the molten salt will decrease too much.

[0113] The laminated substrate of the present invention is a laminated substrate comprising at least a processed substrate and a support glass substrate for supporting the processed substrate, characterized in that the support glass substrate is the support glass substrate described above. The laminated substrate of the present invention preferably has an adhesive layer between the processed substrate and the support glass substrate. The adhesive layer is preferably made of resin, for example, a thermosetting resin, a photocurable resin (particularly an ultraviolet curing resin), etc. It is also preferable that the adhesive layer has heat resistance that can withstand the heat treatment in the manufacturing process of a fan-out type WLP. This makes it difficult for the adhesive layer to melt in the manufacturing process of a fan-out type WLP, and improves the accuracy of the processing. In addition, an ultraviolet curing tape can be used as the adhesive layer to easily fix the processed substrate and the support glass substrate.

[0114] The laminated substrate of the present invention preferably further has a release layer between the processed substrate and the support glass substrate, more specifically between the processed substrate and the adhesive layer, or between the support glass substrate and the adhesive layer. This makes it easier to peel the processed substrate from the support glass substrate after a predetermined processing treatment has been performed on it. From the viewpoint of productivity, it is preferable to peel the processed substrate using irradiation light such as laser light. As the laser light source, an infrared laser light source such as a YAG laser (wavelength 1064 nm) or a semiconductor laser (wavelength 780 to 1300 nm) can be used. In addition, a resin that decomposes when irradiated with an infrared laser can be used for the release layer. Furthermore, a substance that efficiently absorbs infrared rays and converts them into heat can be added to the resin. For example, carbon black, graphite powder, fine metal powder, dyes, pigments, etc. can be added to the resin.

[0115] The delamination layer is composed of a material that undergoes "intralayer delamination" or "interfacial delamination" when irradiated with light such as laser light. In other words, it is composed of a material that, when irradiated with light of a certain intensity, causes the interatomic or intermolecular bonding forces at the atoms or molecules to disappear or decrease, resulting in ablation and delamination. In addition, when irradiated with light, the components contained in the delamination layer may be released as a gas, leading to separation, or the delamination layer may absorb light and become a gas, and the vapor may be released, leading to separation.

[0116] In the laminated substrate of the present invention, the support glass substrate is preferably larger than the processed substrate. This makes it less likely for the edges of the processed substrate to protrude from the support glass substrate, even if the centers of the two are slightly separated when supporting the processed substrate.

[0117] The present invention provides a method for manufacturing a semiconductor package, comprising the steps of: preparing a laminated substrate comprising at least a processed substrate and a support glass substrate for supporting the processed substrate; and performing a processing treatment on the processed substrate, wherein the support glass substrate is the support glass substrate described above.

[0118] The semiconductor package manufacturing method of the present invention preferably further includes a step of transporting a laminated substrate. This can improve the processing efficiency of the processing. Note that the "step of transporting the laminated substrate" and the "step of performing processing on the processed substrate" do not need to be performed separately, but may be performed simultaneously.

[0119] In the semiconductor package manufacturing method of the present invention, the processing steps are preferably a process of wiring on one surface of the processed substrate, or a process of forming solder bumps on one surface of the processed substrate. In the semiconductor package manufacturing method of the present invention, the processed substrate is less likely to change dimensions during these processes, so these steps can be carried out properly.

[0120] In addition to the above, the processing treatment may also include mechanically polishing one surface of the processed substrate (usually the surface opposite to the support glass substrate), dry etching one surface of the processed substrate (usually the surface opposite to the support glass substrate), or wet etching one surface of the processed substrate (usually the surface opposite to the support glass substrate). Furthermore, in the semiconductor package manufacturing method of the present invention, warping of the processed substrate is less likely to occur, and the rigidity of the laminated substrate can be maintained. As a result, the above processing treatment can be performed properly.

[0121] The present invention will be further explained with reference to the drawings.

[0122] Figure 1 is a conceptual perspective view showing an example of the laminated substrate 1 of the present invention. In Figure 1, the laminated substrate 1 comprises a support glass substrate 10 and a processed substrate 11. The support glass substrate 10 is attached to the processed substrate 11 to prevent dimensional changes of the processed substrate 11. The support glass substrate 10 is a lithium aluminosilicate glass, with a Li2O content of 0.02 to 25 mol% in the glass composition, and an average linear thermal expansion coefficient of 45 × 10 in the temperature range of 30 to 380°C. -7 It is above / ℃ and 160×10 -7 The temperature is below / ℃. Furthermore, a release layer 12 and an adhesive layer 13 are placed between the support glass substrate 10 and the processed substrate 11. The release layer 12 is in contact with the support glass substrate 10, and the adhesive layer 13 is in contact with the processed substrate 11.

[0123] As can be seen from Figure 1, the laminated substrate 1 is arranged in the following order: support glass substrate 10, release layer 12, adhesive layer 13, and processed substrate 11. The shape of the support glass substrate 10 is determined according to the processed substrate 11, but in Figure 1, both the support glass substrate 10 and the processed substrate 11 are wafer-shaped. In addition to amorphous silicon (a-Si), the release layer 12 can also be made of silicon oxide, silicate compounds, silicon nitride, aluminum nitride, titanium nitride, etc. The release layer 12 is formed by plasma CVD, spin coating by sol-gel method, etc. The adhesive layer 13 is made of resin and is applied by various printing methods, inkjet method, spin coating method, roll coating method, etc. The adhesive layer 13 is dissolved and removed by a solvent, etc., after the support glass substrate 10 is peeled off from the processed substrate 11 by the release layer 12.

[0124] Figure 2 is a conceptual cross-sectional view showing the manufacturing process of a fan-out type WLP. Figure 2(a) shows a state in which an adhesive layer 21 is formed on one surface of the support member 20. A release layer may be formed between the support member 20 and the adhesive layer 21 if necessary. Next, as shown in Figure 2(b), a plurality of semiconductor chips 22 are attached to the adhesive layer 21. At this time, the active side surface of the semiconductor chip 22 is brought into contact with the adhesive layer 21. Next, as shown in Figure 2(c), the semiconductor chips 22 are molded with a resin encapsulant 23. The encapsulant 23 is made of a material that undergoes little dimensional change after compression molding and when molding the wiring. Subsequently, as shown in Figures 2(d) and (e), after separating the processed substrate 24 with the molded semiconductor chips 22 from the support member 20, it is bonded and fixed to the support glass substrate 26 via the adhesive layer 25. At this time, the surface of the processed substrate 24 opposite to the surface on which the semiconductor chips 22 are embedded is positioned on the support glass substrate 26 side. In this way, a laminated substrate 27 can be obtained. If necessary, a release layer may be formed between the adhesive layer 25 and the support glass substrate 26. Furthermore, after transporting the obtained laminated substrate 27, as shown in Figure 2(f), wiring 28 is formed on the surface of the processed substrate 24 on the side where the semiconductor chip 22 is embedded, and then a number of solder bumps 29 are formed. Finally, after separating the processed substrate 24 from the support glass substrate 26, the processed substrate 24 is cut into individual semiconductor chips 22 and used for the subsequent packaging process (Figure 2(g)).

[0125] Figure 3 is a conceptual cross-sectional view showing the process of thinning a processed substrate using a support glass substrate as a backgrind substrate. Figure 3(a) shows a laminated substrate 30. The laminated substrate 30 is arranged in the order of support glass substrate 31, release layer 32, adhesive layer 33, and processed substrate (silicon wafer) 34. Multiple semiconductor chips 35 are formed on the surface of the processed substrate that is in contact with the adhesive layer 33 by photolithography or the like. Figure 3(b) shows the process of thinning the processed substrate 34 using a polishing device 36. In this process, the processed substrate 34 is mechanically polished and thinned to, for example, several tens of micrometers. Figure 3(c) shows the process of irradiating the release layer 32 with ultraviolet light 37 through the support glass substrate 31. After this process, as shown in Figure 3(d), it becomes possible to separate the support glass substrate 31. The separated support glass substrate 31 is reused as needed. Figure 3(e) shows the process of removing the adhesive layer 33 from the processed substrate 34. After this process, a thinned processed substrate 34 can be obtained.

[0126] The glass substrate of the present invention is characterized by having a glass composition containing, in molar percentages, SiO2 50-65%, Al2O3 8-25%, B2O3 0-10%, Li2O 5.1-20%, Na2O 10-16.1%, K2O 0-15%, MgO 0.01-3%, CaO 0-10%, and ZrO2 0.01-10%, and having a Young's modulus of 80 GPa or higher. Furthermore, the glass substrate of the present invention has a glass composition containing, in molar percentages, SiO2 50-65%, Al2O 38-18%, B2O 30-10%, Li2O 20-25%, Na2O 0.01-10%, K2O 0-15%, MgO 0-10%, CaO 0.01-10%, and ZrO 20-10%, with a Young's modulus of 85 GPa or higher and fracture toughness K IC 0.80 MPa·m 0.5 The above is the characteristic feature. The technical features of the glass substrate of the present invention have already been described in the description section of the supporting glass substrate of the present invention, so a detailed explanation is omitted here.

[0127] The glass substrate of the present invention has a glass composition containing, in molar percentages, SiO2 64-76%, Al2O3 4-15%, B2O3 4-16%, Li2O 0.1-14%, Na2O 0.01-14%, K2O 0-15%, MgO 0-7%, CaO 0-7%, SrO 0-7%, BaO 0-7%, and ZrO2 0-10%, with a Young's modulus of 60 GPa or higher and an average linear thermal expansion coefficient of 38 × 10 in the temperature range of 30-380°C. -7 / ℃ or higher, and 85×10 -7 The glass substrate of the present invention is characterized by having a temperature of 0 / ℃ or less. Furthermore, the glass composition of the present invention contains, in mol% terms, SiO2 64-76%, Al2O3 4-15%, B2O3 4-16%, Li2O 0.1-14%, Na2O 0.01-14%, K2O 0-15%, MgO 0.01-7%, CaO 0.01-7%, SrO 0-7%, BaO 0-7%, and ZrO2 0-10%, with a Young's modulus of 60 GPa or higher and an average linear thermal expansion coefficient of 38 × 10 in the temperature range of 30-380℃. -7 / ℃ or higher, and 85×10 -7 The glass substrate of the present invention is characterized by having a temperature of 0 / ℃ or lower. Furthermore, the glass composition of the present invention contains, in mol% terms, SiO2 64-76%, Al2O3 4-15%, B2O3 4-16%, Li2O 0.1-14%, Na2O 0.01-14%, K2O 0-15%, MgO 0-7%, CaO 0-7%, SrO 0.01-7%, BaO 0-7%, and ZrO2 0-10%, with a Young's modulus of 60 GPa or higher and an average linear thermal expansion coefficient of 38 × 10 in the temperature range of 30-380℃. -7 / ℃ or higher, and 85×10 -7 The glass substrate of the present invention is characterized by having a temperature of 0°C or less. Furthermore, the glass composition of the present invention contains, in mol% terms, SiO2 64-76%, Al2O3 4-15%, B2O3 4-16%, Li2O 0.1-14%, Na2O 0.01-14%, K2O 0-15%, MgO 0.01-7%, CaO 0.01-7%, SrO 0.01-7%, BaO 0-7%, and ZrO2 0-10%, with a Young's modulus of 60 GPa or higher and an average linear thermal expansion coefficient of 38 × 10 in the temperature range of 30-380°C. -7 / ℃ or higher, and 85×10 -7The glass substrate of the present invention is characterized by having a temperature of 0°C or less. Furthermore, the glass substrate of the present invention contains, in mol%, SiO2 64-76%, Al2O3 4-15%, B2O3 4-16%, Li2O 1.5-8.5%, Na2O 0.01-14%, K2O 0-15%, MgO 0.01-7%, CaO 0.01-7%, SrO 0.01-7%, BaO 0-7%, and ZrO2 0-10%, with a Young's modulus of 60 GPa or higher and an average linear thermal expansion coefficient of 38 × 10 in the temperature range of 30-380°C. -7 / ℃ or higher, and 85×10 -7 A key feature is that the temperature is below / ℃. Note that the technical features of the glass substrate of the present invention have already been described in the section describing the supporting glass substrate of the present invention, so a detailed explanation is omitted here. [Examples]

[0128] The present invention will be described below based on the following examples. Note that the following examples are merely illustrative. The present invention is not limited in any way to the following examples.

[0129] Tables 1-36 show the glass composition and glass properties of the examples of the present invention (samples No. 1-361). In the table, "NA" means not measured, "Li / (Na+K)" means the molar ratio [Li2O] / ([Na2O]+[K2O]), "Li+Na+K" means the molar ratio [Li2O]+[Na2O]+[K2O], "Li / P" means the molar ratio [Li2O] / [P2O5], and "(Na-Li) / (Al+B+P)" means the molar ratio ([Na2O]-[Li2O]) / ([Al2O3]+ [B2O3]+[P2O5]) is represented by "(B+Na-P) / (Al+Li)", where the molar ratio is ([B2O3]+[Na2O]-[P2O5]) / ([Al2O3]+[Li2O]), and "Si+1.2P-3Al-2Li-1.5Na-KB" is represented by [SiO2]+1.2×[P2O5]-3×[Al2O3]-2×[Li2O]-1.5×[Na2O]-[K2O]-[B2O3]. The values ​​in parentheses are calculated values ​​predicted from the glass composition.

[0130] Table 1

[0131] Table 2

[0132] Table 3

[0133] Table 4

[0134] Table 5

[0135] Table 6

[0136] Table 7

[0137] Table 8

[0138] Table 9

[0139] Table 10

[0140] Table 11

[0141] Table 12

[0142] Table 13

[0143] Table 14

[0144] Table 15

[0145] Table 16

[0146] Table 17

[0147] Table 18

[0148] Table 19

[0149] Table 20

[0150] Table 21

[0151] Table 22

[0152] Table 23

[0153] Table 24

[0154] Table 25

[0155] Table 26

[0156] Table 27

[0157] Table 28

[0158] Table 29

[0159] Table 30

[0160] Table 31

[0161] [Table 32]

[0162] [Table 33]

[0163] [Table 34]

[0164] [Table 35]

[0165] [Table 36]

[0166] Each sample in the table was prepared as follows. First, the glass raw materials were mixed to achieve the glass composition shown in the table and melted in a platinum pot at 1600°C for 21 hours. Next, the resulting molten glass was poured onto a carbon plate and formed into a flat plate shape. Then, it was cooled at a temperature of 3°C / min in the temperature range between the annealing point and the strain point to obtain a glass substrate (reinforced glass substrate). The surface of the obtained glass substrate was optically polished to a thickness of 1.5 mm, and various properties were evaluated.

[0167] The density (ρ) is a value measured by the well-known Archimedes method.

[0168] The coefficient of thermal expansion (α) at ​​30-380°C 30-380℃ This value is the average thermal expansion coefficient measured using a dilatometer.

[0169] High temperature viscosity 10 2.5 Temperature at dPa·s (10 2.5 dPa·s) is a value measured using the platinum ball pulling method.

[0170] The softening point (Ts) is a value measured according to the ASTM C338 method.

[0171] The liquidus temperature (TL) was defined as the highest temperature at which devitrification (devitrified particles) was observed inside the glass after passing through a standard 30-mesh (500 μm) sieve and remaining in a 50-mesh (300 μm) sieve. This was done by placing the glass powder in a platinum boat, holding it in a temperature gradient furnace for 24 hours, removing the platinum boat, and then observing it under a microscope. The liquidus temperature (logη at TL) was the viscosity at the liquidus temperature measured using the platinum ball pulling method, and is expressed as logη.

[0172] The Young's modulus (E) was calculated using a method compliant with JIS R1602-1995, "Test Method for Elastic Modulus of Fine Ceramics."

[0173] Fracture toughness K 1C This was calculated using a method compliant with JIS R1607-2015 "Test Method for Room Temperature Fracture Toughness of Fine Ceramics".

[0174] The acid resistance test uses a glass sample measuring 50 × 10 × 1.0 mm with both sides mirror-polished. After thoroughly washing it with neutral detergent and pure water, it is immersed in a 5% by mass HCl aqueous solution heated to 80°C for 24 hours. The mass loss per unit surface area (mg / cm²) before and after immersion is measured. 2 This was evaluated by calculating ( ).

[0175] The alkali resistance test was conducted using a glass sample measuring 50 × 10 × 1.0 mm with both sides mirror-polished. After thoroughly washing it with neutral detergent and pure water, the sample was immersed in a 5% by mass NaOH aqueous solution heated to 80°C for 6 hours. The mass loss per unit surface area (mg / cm²) before and after immersion was measured. 2 This was evaluated by calculating ( ).

[0176] As is clear from the table, samples No. 1 to 361 have an average linear thermal expansion coefficient of 39.6 × 10⁻⁶ in the temperature range of 30 to 380°C. -7 / ℃ or higher, and 107.4 × 10-7 The temperature is below / ℃, the Young's modulus is 63 GPa or higher, and the fracture toughness is K 1c 0.91 MPa·m 0.5 Therefore, it is considered that the processed substrate is less likely to undergo dimensional changes and less likely to be damaged when dropped.

[0177] Next, each glass substrate is immersed in a molten KNO3 salt at 430°C for 4 hours to perform ion exchange treatment, thereby obtaining a tempered glass substrate with a compressive stress layer on the glass surface. After cleaning the glass surface, the number and spacing of interference fringes observed using a surface stress meter FSM-6000 (manufactured by Orihara Seisakusho Co., Ltd.) are used to determine the compressive stress value (CS) of the outermost compressive stress layer. K ) and stress depth (DOL_ZERO K ) was calculated here. K This is the depth at which the compressive stress value becomes zero. For the calculation of stress characteristics, the refractive index of each sample was set to 1.51 and the optical elastic constant to 30.1 [(nm / cm) / MPa].

[0178] Furthermore, after immersing each glass substrate in a molten NaNO3 salt at 380°C for 1 hour to perform ion exchange treatment and obtain a reinforced glass substrate, the glass surface is cleaned, and the compressive stress value (CS) of the outermost surface is obtained from the phase difference distribution curve observed using a scattered light photoelastic stress meter SLP-1000 (manufactured by Orihara Seisakusho Co., Ltd.). Na ) and stress depth (DOL_ZERO Na ) was calculated here. Na This represents the depth at which the stress value becomes zero. For the calculation of the stress characteristics, the refractive index of each sample was set to 1.51, and the optical elastic constant to 30.1 [(nm / cm) / MPa].

[0179] As is clear from the table, when samples No. 1 to 361 were treated with ion exchange using KNO3 molten salt, the compressive stress value of the outermost compressive stress layer (CS) K The compressive stress value (CS) of the outermost compressive stress layer is 473 MPa or higher, and when ion exchange treatment is performed with NaNO3 molten salt, NaSince the pressure is 165 MPa or higher, ion exchange treatment is possible with any molten salt, and it is considered unlikely to be damaged when dropped.

[0180] [Examples]

[0181] First, glass raw materials were mixed to achieve the glass compositions of samples No. 2 and 34 in Table 1, and melted in a platinum pot at 1600°C for 21 hours. Next, the resulting molten glass was poured onto a carbon plate and formed into a flat plate shape. After that, it was cooled at a rate of 3°C / min in the temperature range between the annealing point and the strain point to obtain a glass substrate. The surfaces of the obtained glass substrates were optically polished to a thickness of 0.7 mm for sample No. 2 and 0.8 mm for sample No. 34.

[0182] Next, the glass substrate underwent ion exchange treatment by immersing it in a molten NaNO3 salt at 380°C (100% by mass NaNO3 concentration) for 3 hours, followed by ion exchange treatment again by immersing it in a mixed molten salt of KNO3 and LiNO3 at 380°C (2.5% by mass LiNO3 concentration) for 75 minutes. Furthermore, after cleaning the surface of the obtained tempered glass substrate, the stress profile of the tempered glass substrate was measured using a scattered light photoelastic stress meter SLP-1000 (manufactured by Orihara Manufacturing Co., Ltd.) and a surface stress meter FSM-6000 (manufactured by Orihara Manufacturing Co., Ltd.). In both cases, a non-monotonic stress profile similar to that shown in Figure 4 was obtained, i.e., a stress profile having a first peak, a second peak, a first bottom, and a second bottom. [Examples]

[0183] First, glass raw materials were mixed to match the glass compositions of samples No. 108 and 145 in Table 5, and melted at 1600°C for 21 hours using a platinum pot. Next, the resulting molten glass was poured onto a carbon plate and formed into a flat plate shape. After that, it was cooled at a rate of 3°C / min in the temperature range between the annealing point and the strain point to obtain a glass substrate. The surface of the obtained glass substrate was optically polished to a thickness of 0.7 mm.

[0184] Next, the glass substrate underwent ion exchange treatment by immersing it in a molten NaNO3 salt at 380°C (100% by mass NaNO3 concentration) for 3 hours, followed by ion exchange treatment again by immersing it in a mixed molten salt of KNO3 and LiNO3 at 380°C (1.5% by mass LiNO3 concentration) for 45 minutes. Furthermore, after cleaning the surface of the obtained tempered glass substrate, the stress profile of the tempered glass substrate was measured using a scattered light photoelastic stress meter SLP-1000 (manufactured by Orihara Manufacturing Co., Ltd.) and a surface stress meter FSM-6000 (manufactured by Orihara Manufacturing Co., Ltd.). In both cases, a non-monotonic stress profile similar to that shown in Figure 5 was obtained, i.e., a stress profile with a first peak, a second peak, a first bottom, and a second bottom. Therefore, the obtained tempered glass substrate is expected to have a low probability of breakage upon impact. [Examples]

[0185] First, glass batches prepared with glass raw materials to achieve the glass composition shown in the table were placed in a platinum crucible and melted at 1500-1700°C for 24 hours, followed by clarification and homogenization. During the melting of the glass batches, a platinum stirrer was used to stir and homogenize them. Next, the molten glass was poured onto a carbon plate, formed into a plate shape, and then slowly cooled at a temperature near the annealing point for 30 minutes.

[0186] Next, the glass substrates for samples No. 1 to 361 were processed to a diameter of φ300 mm and a thickness of 0.8 mm, and both surfaces were polished using a polishing device. Specifically, both surfaces of the glass substrate were sandwiched between a pair of polishing pads with different outer diameters, and both surfaces of the glass substrate were polished while rotating both the glass substrate and the pair of polishing pads together. During the polishing process, the process was controlled so that a portion of the glass substrate occasionally protruded from the polishing pads. The polishing pads were made of urethane, the average particle size of the polishing slurry used during the polishing process was 2.5 μm, and the polishing speed was 15 m / min. For each polished glass substrate obtained, the overall thickness deviation (TTV) and warpage were measured using a Kobelco Research Institute SBW-331ML / d. As a result, the overall thickness deviation (TTV) was 0.38 μm and the warpage was 28 μm, indicating that these substrates are suitable as support glass substrates. [Industrial applicability]

[0187] The support glass substrate of the present invention is suitable as a support glass substrate for manufacturing WLP and PLP. In addition to these applications, the support glass substrate of the present invention is expected to have applications in applications requiring high mechanical strength, such as window glass, substrates for magnetic disks, substrates for flat panel displays, substrates for flexible displays, cover glass for solar cells, cover glass for solid-state image sensors, and cover glass for automotive applications. [Explanation of symbols]

[0188] 1, 27, 30 Multilayer substrates 10, 26, 31 Support glass substrate 11, 24, 34 Processed substrates 12, 32 Exfoliation layer 13, 21, 25, 33 Adhesive layer 20 Support members 22, 35 Semiconductor chips 23 Sealing material 28 Wiring 29 Handa Bump 36 Polishing equipment 37 Ultraviolet light

Claims

1. A support glass substrate for supporting a processed substrate, which is a lithium aluminosilicate glass, and Li in the glass composition ２ The oxygen content is 0.02 to 25 mol%, and the average linear thermal expansion coefficient in the temperature range of 30 to 380°C is 38 × 10⁻⁶. －７ / ℃ or higher, and 160 × 10 －７ A supporting glass substrate characterized by having a temperature of / °C or lower.

2. A support glass substrate for supporting a processed substrate, having a glass composition containing, in mol%, SiO ２ 50 to 80%, Al ２ O ３ 4 to 25%, B ２ O ３ 0 to 16%, Li ２ O 0.9 to 15%, Na ２ O more than 0 to 21%, K ２ O 0 to 15%, MgO 0 to 10%, ZnO 0 to 10%, P ２ O ５ 0 to 15%, and being characterized by containing the above, the support glass substrate according to claim 1.

3. Molar ratio ([Na ２ O]-[Li ２ O]) / ([Al ２ O ３ ] + [B ２ O ３ ] + [P ２ O ５ The supporting glass substrate according to claim 1 or 2, characterized in that it satisfies the relationship ) ≤ 1.

50.

4. Molar ratio ([B ２ O ３ ] + [Na ２ O]-[P] ２ O ５ ]) / ([Al ２ O ３ ] + [Li ２ A support glass substrate according to any one of claims 1 to 3, characterized in that it satisfies the relationship (O) ≥ 0.

001.

5. ([Li ２ O] + [Na] ２ O] + [K ２ [O] contains 12 mol% or more of [SiO ２ ] + 1.2 × [P ２ O ５ ]-3×[Al ２ O ３ ]-2×[Li ２ O]-1.5×[Na ２ O]-[K ２ O]-[B ２ O ３ A support glass substrate according to any one of claims 1 to 4, characterized in that it satisfies the relationship ≥ -40%.

6. High temperature viscosity 10 ２．５ A support glass substrate according to any one of claims 1 to 5, characterized in that the temperature at dPa·s is less than 1660°C.

7. A support glass substrate according to any one of claims 1 to 6, characterized in that it has an overflow confluence surface in the center in the thickness direction of the plate.

8. The mass loss per unit surface area when immersed in a 5% by mass HCl aqueous solution heated to 80°C for 24 hours was 100.0 mg / cm². ２ The support glass substrate according to any one of claims 1 to 7, characterized in that it is as follows:

9. The mass loss per unit surface area when immersed in a 5% by mass NaOH aqueous solution heated to 80°C for 6 hours was 5.0 mg / cm². ２ The support glass substrate according to any one of claims 1 to 8, characterized in that it is as follows:

10. A support glass substrate according to any one of claims 1 to 9, characterized in that it has a compressive stress layer on the glass surface.

11. The glass surface has a compressive stress layer, and the glass composition is SiO2 in mol%. ２ 50-80%, Al ２ O ３ 4-25%, B ２ O ３ 0-16%, Li ２ O 0.9-15%, Na ２ O >0~21%, K ２ O 0-15%, MgO 0-10%, ZnO 0-10%, P ２ O ５ A support glass substrate characterized by containing 0-15%.

12. The support glass substrate according to claim 10 or 11, characterized in that the compressive stress value of the outermost surface of the compressive stress layer is 165 to 1000 MPa.

13. A support glass substrate according to any one of claims 10 to 12, characterized in that the stress depth of the compressive stress layer is 50 to 200 μm.

14. The glass surface has a compressive stress layer, and the glass composition is Al ２ O ３ P ２ O ５ ([Li ２ O] + [Na] ２ O] + [K ２ [O] contains 12 mol% or more of [SiO ２ ] + 1.2 × [P ２ O ５ ]-3×[Al ２ O ３ ]-2×[Li ２ O]-1.5×[Na ２ O]-[K ２ O]-[B ２ O ３ A support glass substrate according to any one of claims 1 to 13, characterized in that it satisfies the relationship ≥ -20 mol%.

15. A support glass substrate according to any one of claims 10 to 14, characterized in that the stress profile in the thickness direction has at least a first peak, a second peak, a first bottom, and a second bottom.

16. A support glass substrate according to any one of claims 1 to 15, characterized in that it has a wafer shape or a substantially disc shape with a diameter of 100 to 500 mm, a plate thickness of less than 2.0 mm, an overall plate thickness deviation (TTV) of 5 μm or less, and a warpage of 60 μm or less.

17. A support glass substrate according to any one of claims 1 to 16, characterized in that it has a substantially rectangular shape of 200 mm or more, a plate thickness of 1.0 mm or more, and an overall plate thickness deviation (TTV) of 30 μm or less.

18. The support glass substrate according to claim 17, characterized in that the angle of the corner when viewed from above is 89.0 to 91.0°.

19. A support glass substrate according to any one of claims 1 to 18, characterized in that it has a positioning portion on its outer periphery.

20. The support glass substrate according to any one of claim 19, characterized in that the positioning portion is a notch structure, a chamfered structure, or a cutout structure.

21. A laminate comprising at least a processed substrate and a support glass substrate for supporting the processed substrate, wherein the support glass substrate is the support glass substrate described in any one of claims 1 to 20.

22. The laminate according to any one of claims 1 to 21, characterized in that the processed substrate comprises at least a semiconductor chip molded with an encapsulant.

23. A step of preparing a laminate comprising at least a processed substrate and a support glass substrate for supporting the processed substrate, A method for manufacturing a semiconductor package, comprising the steps of performing a processing treatment on a processed substrate, wherein the support glass substrate is the support glass substrate described in any one of claims 1 to 22.

24. The method for manufacturing a semiconductor package according to claim 23, characterized in that the processing includes a step of wiring on one surface of the processed substrate.

25. The method for manufacturing a semiconductor package according to claim 23 or 24, characterized in that the processing step includes a step of forming solder bumps on one surface of the processed substrate.

26. The glass composition is SiO in mol%. ２ 50-65%, Al ２ O ３ 8-25%, B ２ O ３ 0-10%, Li ２ O 5.1-20%, Na ２ O more than 10 to 16.1%, K ２ O 0-15%, MgO 0.01-3%, CaO 0-10%, ZrO ２ A glass substrate characterized by containing 0.01 to 10% of a certain substance and having a Young's modulus of 80 GPa or higher.

27. As a glass composition, in mol%, SiO ２ 50 to 65%, Al ２ O ３ 8 to 18%, B ２ O ３ 0 to 10%, Li ２ O 20 to 25%, Na ２ O 0.01 to 10%, K ２ O 0 to 15%, MgO 0 to 10%, CaO 0.01 to 10%, ZrO ２ 0 to 10%, having a Young's modulus of 85 GPa or more and a fracture toughness K ＩＣ of 0.80 MPa·m ０．５ or more, characterized by a glass substrate.

28. As a glass composition, in mol%, SiO ２ 64 to 76%, Al ２ O ３ 4 to 15%, B ２ O ３ 4 to 16%, Li ２ O 0.1 to 14%, Na ２ O 0.01 to 14%, K ２ O 0 to 15%, MgO 0 to 7%, CaO 0 to 7%, SrO 0 to 7%, BaO 0 to 7%, ZrO ２ 0 to 10%, with a Young's modulus of 60 GPa or more and an average linear thermal expansion coefficient in the temperature range of 30 to 380 °C being 38×10 －７ / °C or more and 85×10 －７ / °C or less. A glass substrate characterized by this is provided.

29. The glass substrate according to claim 28, characterized in that the glass composition contains 0.01 to 7% MgO and 0.01 to 7% CaO in mol%.

30. The glass substrate according to claim 28, characterized in that it contains 0.01 to 7% of SrO in mol% as the glass composition.

31. The glass substrate according to claim 28, characterized in that the glass composition contains, in mol% terms, 0.01 to 7% MgO, 0.01 to 7% CaO, and 0.01 to 7% SrO.

32. As for the glass composition, in mol% Li ２ The glass substrate according to claim 28, characterized by containing 1.5 to 8.5% O, 0.01 to 7% MgO, 0.01 to 7% CaO, and 0.01 to 7% SrO.

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