Image sensor and electronic device including the same

The nano-optical lens array in the image sensor enhances light utilization efficiency and autofocus capabilities by separating and focusing light based on wavelength, addressing the inefficiencies of traditional color filters.

JP2026076984APending Publication Date: 2026-05-12SAMSUNG ELECTRONICS CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
SAMSUNG ELECTRONICS CO LTD
Filing Date
2025-10-23
Publication Date
2026-05-12

AI Technical Summary

Technical Problem

Image sensors using color filters suffer from low light utilization efficiency due to absorption of unwanted colors, resulting in significant light loss.

Method used

An image sensor with a nano-optical lens array that separates incident light by wavelength, utilizing nanoposts to multifocus green light on multiple pixels, single-focus blue light on one pixel group, and single-focus red light on another, enhancing light condensing and color separation capabilities.

Benefits of technology

The nano-optical lens array improves light utilization efficiency and minimizes resolution reduction while performing autofocus functions.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure 2026076984000001_ABST
    Figure 2026076984000001_ABST
Patent Text Reader

Abstract

The present invention provides an image sensor and an electronic device including the same. [Solution] The image sensor includes a sensor substrate comprising a first pixel group comprising a plurality of continuously arranged first pixels, a second pixel group comprising a plurality of continuously arranged second pixels, a third pixel group comprising a plurality of continuously arranged third pixels, and a fourth pixel group comprising a plurality of continuously arranged fourth pixels; and a nanooptical lens array comprising a first pixel corresponding region facing the first pixel group, a second pixel corresponding region facing the second pixel group, a third pixel corresponding region facing the third pixel group, and a fourth pixel corresponding region facing the fourth pixel group, wherein each of the first to fourth pixel corresponding regions comprises one or more nanoposts, and separates incident light by wavelength, multifocusing green light on a plurality of first pixels and a plurality of fourth pixels, single-focusing blue light on the second pixel group, and single-focusing red light on the third pixel group.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] The present invention relates to an image sensor and an electronic device including the same.

Background Art

[0002] An image sensor usually uses a color filter to sense the color of incident light. However, since the color filter absorbs the light of the remaining colors except the light of the corresponding color, the light utilization efficiency may decrease. For example, when an RGB color filter is used, only 1 / 3 of the incident light is transmitted, and the remaining 2 / 3 is absorbed, so the light utilization efficiency is only about 33%. Therefore, in the case of a color display device or a color image sensor, most of the light loss occurs in the color filter.

[0003] Thus, a structure that utilizes nanoposts to separate colors has been adopted in the image sensor, and various solutions for improving the color separation ability have been explored.

Summary of the Invention

Problems to be Solved by the Invention

[0004] The problem to be solved by the present invention is to provide an image sensor having improved light efficiency with a nano-optical lens array and an electronic device including the same.

Means for Solving the Problems

[0005] According to the embodiment, an image sensor is provided, which includes a sensor substrate comprising a first pixel group comprising a plurality of continuously arranged first pixels, a second pixel group comprising a plurality of continuously arranged second pixels, a third pixel group comprising a plurality of continuously arranged third pixels, and a fourth pixel group comprising a plurality of continuously arranged fourth pixels; and a nano-optical lens array comprising a first pixel corresponding region facing the first pixel group, a second pixel corresponding region facing the second pixel group, a third pixel corresponding region facing the third pixel group, and a fourth pixel corresponding region facing the fourth pixel group, wherein each of the first to fourth pixel corresponding regions comprises one or more nanoposts, and separates incident light by wavelength, multifocusing green light on the plurality of first pixels and the plurality of fourth pixels, single-focusing blue light on the second pixel group, and single-focusing red light on the third pixel group.

[0006] The aforementioned nano-optical lens array has a focal length for blue light that is 80% to 120% of the focal length for green light.

[0007] The nanoposts in the first pixel-corresponding region may be arranged to have four-fold symmetry within a predetermined region including the center of the first pixel-corresponding region, with respect to the center of the first pixel-corresponding region.

[0008] The area of ​​the predetermined region is also 1 / 4 of the total area of ​​the region corresponding to the first pixel.

[0009] The nanoposts in the first pixel-corresponding region may be arranged to have two-fold symmetry with respect to the center of the first pixel-corresponding region.

[0010] In a cross-sectional view immediately after passing through the second pixel-corresponding region, the distance showing the phase difference π in the blue light phase distribution is greater than p and less than 1.25p, where the width of one part of the second pixel-corresponding region is 2p.

[0011] In a cross-sectional view immediately after passing through the third pixel-corresponding region, the distance showing the phase difference π in the red light phase distribution is less than 1.25p, where the width of one part of the third pixel-corresponding region is 2p.

[0012] The largest nanopost among the nanoposts in the first pixel-corresponding region may be positioned to align with the centers of the plurality of first pixels facing the first pixel-corresponding region.

[0013] The largest nanopost among the nanoposts in the first pixel-corresponding region may be positioned such that it is shifted by a predetermined distance in the direction toward the center of the first pixel-corresponding region, relative to the centers of the plurality of first pixels facing the first pixel-corresponding region.

[0014] In the first pixel-corresponding region, the first directional distance between the centers of the most adjacent nanoposts is the first period; in the second pixel-corresponding region, the first directional distance between the centers of the most adjacent nanoposts is the second period; and in the third pixel-corresponding region, the first directional distance between the centers of the most adjacent nanoposts is the third period. The first and second periods are also different from each other.

[0015] The first period is smaller than the second period.

[0016] The aforementioned second period and the aforementioned third period are identical to each other.

[0017] The largest nanopost among the nanoposts in the second pixel-corresponding region may be positioned to align with the centers of the plurality of second pixels facing the second pixel-corresponding region.

[0018] The largest nanopost among the nanoposts in the third pixel-corresponding region may be positioned to align with the center of the third pixel group facing the third pixel-corresponding region.

[0019] The largest of the multiple nanoposts may be located in the region corresponding to the third pixel.

[0020] The number of nanoposts in the region corresponding to the first pixel is greater than the number of nanoposts in the region corresponding to the second pixel.

[0021] The first, second, third, and fourth pixel groups are each multiple, and the nano-optical lens array may further include a supplementary structural region in which multiple nanoposts are arranged to separate incident light by wavelength, focusing a portion of the green light onto one of the multiple first pixel groups, focusing another portion of the green light onto one of the multiple fourth pixel groups, focusing the blue light onto one of the multiple second pixel groups, and focusing the red light onto one of the multiple third pixel groups.

[0022] The first, second, third, and fourth pixel groups each comprise a plurality of such groups, and the nano-optical lens array may further include a supplementary structural region in which a plurality of nanoposts are arranged to separate incident light by wavelength, focusing a portion of the green light onto one of the plurality of first pixel groups, multifocusing the other portion of the green light onto a plurality of fourth pixels in the plurality of fourth pixel groups, focusing the blue light onto one of the plurality of second pixel groups, and focusing the red light onto one of the plurality of third pixel groups.

[0023] The image sensor may further include a color filter array disposed between the sensor substrate and the nano-optical lens array.

[0024] According to an embodiment, there is provided an electronic device including: a lens assembly that forms an optical image of a subject; an image sensor that converts the optical image formed by the lens assembly into an electrical signal; and a processor that processes a signal generated by the image sensor. The image sensor includes: a sensor substrate including a first pixel group including a plurality of first pixels arranged in a continuous array, a second pixel group including a plurality of second pixels arranged in a continuous array, a third pixel group including a plurality of third pixels arranged in a continuous array, and a fourth pixel group including a plurality of fourth pixels arranged in a continuous array; and a first pixel corresponding region facing the first pixel group, a second pixel corresponding region facing the second pixel group, a third pixel corresponding region facing the third pixel group, and a fourth pixel corresponding region facing the fourth pixel group. The first to fourth pixel corresponding regions each include one or more nanoposts, and a nano-optical lens array that separates incident light by wavelength, multi-focuses green light on the plurality of first pixels and the plurality of fourth pixels, single-focuses blue light on the second pixel group, and single-focuses red light on the third pixel group.

Advantages of the Invention

[0025] The image sensor according to the embodiment includes a nano-optical lens array that performs both color separation and light condensing functions, thereby improving light utilization efficiency.

[0026] The image sensor according to the embodiment performs an autofocus function by the above-described nano-optical lens array, and reduction in resolution can be minimized.

Brief Description of the Drawings

[0027] [Figure 1] It is a schematic block diagram of an image sensor according to an embodiment. [Figure 2A] It is a plan view showing a color array indicated by a pixel array of an image sensor according to an embodiment. [Figure 2B] It is a plan view showing a sensor substrate, a nano-optical lens array, and a color filter array provided in a pixel array of an image sensor according to an embodiment. [Figure 2C] This is a plan view showing a sensor substrate, a nano-optical lens array, and a color filter array provided in the pixel array of an image sensor according to an embodiment. [Figure 2D] This is a plan view showing a sensor substrate, a nano-optical lens array, and a color filter array provided in the pixel array of an image sensor according to an embodiment. [Figure 3A] This is a cross-sectional view showing the pixel array of an image sensor according to an embodiment, with different cross-sections. [Figure 3B] This is a cross-sectional view showing the pixel array of an image sensor according to an embodiment, with different cross-sections. [Figure 4] This is a plan view conceptually showing the size of the focusing lens formed by multiple regions of a nano-optical lens array provided in the pixel array of an image sensor according to an embodiment. [Figure 5A] This shows the phase distribution of blue, green, and red light immediately after they pass through the nano-optical lens array. [Figure 5B] This shows the phase distribution of blue, green, and red light immediately after they pass through the nano-optical lens array. [Figure 5C] This shows the phase distribution of blue, green, and red light immediately after they pass through the nano-optical lens array. [Figure 6] This is a plan view illustrating an exemplary nanopost arrangement configuration of a nano-optical lens array provided in the pixel array of an image sensor according to an embodiment. [Figure 7] This is a plan view illustrating an exemplary nanopost arrangement configuration of a nano-optical lens array provided in the pixel array of an image sensor according to another embodiment. [Figure 8] Furthermore, this is a plan view illustrating the conceptual structure of a nano-optical lens array provided in the pixel array of an image sensor according to another embodiment. [Figure 9] Furthermore, this is a plan view illustrating the conceptual structure of a nano-optical lens array provided in the pixel array of an image sensor according to another embodiment. [Figure 10]This cross-sectional view illustrates a pixel array of an image sensor according to another embodiment. [Figure 11] This is a schematic block diagram showing an electronic device including an image sensor according to an embodiment. [Figure 12] This is a schematic block diagram showing the camera module installed in the electronic device shown in Figure 11. [Figure 13] This is a block diagram of an electronic device including a multi-camera module. [Figure 14] Figure 13 is a detailed block diagram of one camera module installed in the electronic device. [Modes for carrying out the invention]

[0028] The embodiments will be described in detail below with reference to the attached drawings. The embodiments described are merely illustrative examples, and various modifications are possible from these embodiments. In the following drawings, the same reference numerals refer to the same components, and the size of each component in the drawings is exaggerated for clarity and convenience of explanation.

[0029] In the following, the terms "top" or "above" may include not only things that are directly above something that is in contact with it, but also things that are above it without being in contact with it.

[0030] Terms such as "first," "second," etc., may be used to describe various components, but are used solely to distinguish one component from others. Such terms do not imply that the components differ in material or structure.

[0031] A singular expression includes multiple expressions unless the context clearly indicates otherwise. Furthermore, when a part "includes" a component, this means it includes other components, rather than excluding them, unless otherwise stated.

[0032] Furthermore, terms such as "part" and "module" as used in the specification refer to a unit that processes at least one function or operation, which may be embodied by hardware or software, or by a combination of hardware and software.

[0033] The use of the term "the aforementioned" and similar demonstrative terms can apply to both singular and plural nouns.

[0034] The steps constituting the method may be performed in any order unless explicitly stated otherwise. Furthermore, the use of all illustrative terms (e.g., etc.) is solely for the purpose of detailing the technical idea and, unless limited by the claims, does not limit the scope of the rights.

[0035] Figure 1 is a schematic block diagram of an image sensor according to one embodiment. Referring to Figure 1, the image sensor 1000 may include a pixel array 1100, a timing controller 1010, a row decoder 1020, and an output circuit 1030. The image sensor may be a CCD (charge coupled device) image sensor or a CMOS (complementary metal oxide semiconductor) image sensor.

[0036] The pixel array 1100 includes pixels arranged in a two-dimensional array along multiple rows and columns. The row decoder 1020 selects one row of the pixel array 1100 in response to a row address signal output from the timing controller 1010. The output circuit 1030 outputs a light-sensing signal from multiple pixels arranged along the selected row, on a column-by-column basis. For this purpose, the output circuit 1030 may include a column decoder and an analog-to-digital converter (ADC). For example, the output circuit 1030 may include multiple ADCs positioned column by column between the column decoder and the pixel array 1100, or a single ADC positioned at the output terminal of the column decoder. The timing controller 1010, the row decoder 1020, and the output circuit 1030 may be implemented as a single chip or as separate chips. A processor for processing the video signal output through the output circuit 1030 may be implemented as a single chip together with the timing controller 1010, the row decoder 1020, and the output circuit 1030.

[0037] The pixel array 1100 may include multiple pixels that sense light of different wavelengths. The arrangement of pixels can be implemented in a variety of ways.

[0038] The pixel array 1100 may include multiple pixels that sense light of different wavelengths. The arrangement of pixels can be implemented in a variety of ways.

[0039] Figure 2A is a plan view showing the color arrangement of the pixel array of the image sensor according to the embodiment, and Figures 2B, 2C, and 2D are plan views showing the sensor substrate, nano-optical lens array, and color filter array provided in the pixel array of the image sensor according to the embodiment.

[0040] The color arrangement shown in Figure 2A is similar to a Bayer pattern, but differs from a typical Bayer pattern in that the same color is shown adjacently in a 2x2 arrangement. A 2x2 arrangement of green (G), a 2x2 arrangement of blue (B), a 2x2 arrangement of red (R), and a 2x2 arrangement of green (G) form a unit pattern UP, and such unit pattern UPs are repeated two-dimensionally along the first direction (X direction) and the second direction (Y direction). Such a color arrangement can be used to improve the sensitivity of a micro-image sensor.

[0041] The color array in Figure 2A is illustrative and not limited thereto. For example, a CYGM array in which magenta, cyan, yellow, and green are represented in one unit pattern, or an RGBW array in which green, red, blue, and white are represented in one unit pattern, can be used. In addition, the unit pattern may be realized in a 3x2 array, and the pixels of the pixel array 1100 may be arranged in various ways depending on the color characteristics of the image sensor 1000. The following explanation uses a color array based on red (R), green (G), and blue (B) as an example, but it can be changed and applied to other forms of color arrays.

[0042] The pixel array 1100 of the image sensor 1000 may include a sensor substrate 110 having a pixel array corresponding to such a color array, and a nano-optical lens array 130 that separates incident light by wavelength and focuses light of the wavelength corresponding to each pixel. Figures 2B and 2C are plan views showing such a sensor substrate 110 and nano-optical lens array 130.

[0043] Referring to Figure 2B, the sensor substrate 110 may include multiple pixels PX that sense incident light, that is, that convert incident light into electrical signals to generate video signals. The sensor substrate 110 may include multiple unit pixel groups 110G. Each unit pixel group 110G corresponds one-to-one with the unit pattern UP shown in Figure 2A. Each unit pixel group 110G includes a first pixel group 111, a second pixel group 112, a third pixel group 113, and a fourth pixel group 114. The first pixel group 111, the second pixel group 112, the third pixel group 113, and the fourth pixel group 114 are arranged in a 2x2 pattern along the first direction (X direction) and the second direction (Y direction). The first pixel group 111 includes four first pixels 11, 12, 13, and 14 arranged in a 2x2 grid; the second pixel group 112 includes four second pixels 21, 22, 23, and 24 arranged in a 2x2 grid; the third pixel group 113 includes four third pixels 31, 32, 33, and 34 arranged in a 2x2 grid; and the fourth pixel group 114 includes four fourth pixels 41, 42, 43, and 44 arranged in a 2x2 grid.

[0044] The pixel arrangement of the sensor substrate 110 is for sensing incident light by dividing it into colors according to the arrangement shown in Figure 2A. The first pixel group 111 and the fourth pixel group 114 correspond to green light, the second pixel group 112 corresponds to blue light, and the third pixel group 113 corresponds to red light. Hereafter, the names may be used interchangeably as follows: the first pixel group is the first green pixel group, the second pixel group is the blue pixel group, the third pixel group is the red pixel group, and the fourth pixel group is the second green pixel group. Also, the names may be used interchangeably as follows: the first pixel is the first green pixel, the second pixel is the blue pixel, the third pixel is the red pixel, and the fourth pixel is the second green pixel.

[0045] Each illustrated pixel PX may contain a light-sensing cell that independently senses incident light. Individual pixels, namely the four first pixels 11, 12, 13, and 14 of the first pixel group 111, the four second pixels 21, 22, 23, and 24 of the second pixel group 112, the four third pixels 31, 32, 33, and 34 of the third pixel group 113, and the four fourth pixels 41, 42, 43, and 44 of the fourth pixel group 114, can each be used as an independent image pixel. Some of the pixels in the first pixel group 111 (four first pixels 11, 12, 13, 14), the second pixel group 112 (four second pixels 21, 22, 23, 24), the third pixel group 113 (four third pixels 31, 32, 33, 34), and the fourth pixel group 114 (four fourth pixels 41, 42, 43, 44) may be used as autofocus pixels. Such some pixels are used only for autofocus signal generation and are not used as independent image pixels. However, this is an example and is not limited to this; each of multiple pixels may be used for both image signal generation and autofocus signal generation.

[0046] The autofocus signal can be obtained from the difference between the output signals of adjacent autofocus pixels. For example, if four second pixels 21, 22, 23, and 24 within the second pixel group 112 are used as autofocus pixels, the autofocus signal can be generated from the difference between the sum of the output signals of the two second pixels 21 and 23 on the left and the sum of the output signals of the two second pixels 22 and 24 on the right.

[0047] Adjacent pixels PX can be electrically isolated by an isolation structure. Although simply shown as lines in the diagram, the isolation structure may have physical thickness. The isolation structure may be formed, for example, by a deep trench isolation structure. The deep trench may be filled with air or an electrically insulating material. After forming the optical sensing layer, an isolation structure (DTI) may be formed on the optical sensing layer to form multiple electrically isolated cells. A single pixel PX may be partitioned by two or more optical sensing cells.

[0048] The first-direction width of a pixel PX is denoted by p, and in the drawing, p is shown as being the same as the pixel pitch, which is defined as the distance between the centers of adjacent pixels. However, due to the thickness of the isolation structure, the pixel width is smaller than the pixel pitch.

[0049] Referring to Figure 2C, the nano-optical lens array 130 includes multiple pixel-corresponding regions, each region being equipped with nanoposts (not shown). The region divisions of the nano-optical lens array 130 and the shape and arrangement of the nanoposts (not shown) provided in each region can be set to form a phase distribution that separates incident light by wavelength and focuses it onto opposing pixels. In the following description, color separation will be described in the visible light band, but it is not limited to this, and the wavelength band can be extended to the visible light or infrared range, or to a variety of other ranges.

[0050] The nano-optical lens array 130 includes a plurality of unit pixel groups 110G of the sensor substrate 110 shown in Figure 2B, and a plurality of corresponding pixel-dependent groups 130G. The pixel-dependent groups 130G include a first pixel-dependent region 131 facing the first pixel group 111, a second pixel-dependent region 132 facing the second pixel group 112, a third pixel-dependent region 133 facing the third pixel group 113, and a fourth pixel-dependent region 134 facing the fourth pixel group 114. The first to fourth pixel-dependent regions 131, 132, 133, and 134 may be referred to as the first green pixel-dependent region, blue pixel-dependent region, red pixel-dependent region, and second green pixel-dependent region, respectively.

[0051] The shape and arrangement of multiple nanoposts (not shown) provided in each of the first to fourth pixel-corresponding regions 131, 132, 133, and 134 allow incident light to be separated by wavelength and focused onto pixels provided on the sensor substrate 110. The nano-optical lens array 130 can form different focusing patterns for each color. For example, light of a certain color may be multifocused onto multiple adjacent pixels exhibiting the same color, or conversely, light of a certain color may be single-focused onto the center of multiple adjacent pixels exhibiting the same color. For example, the nano-optical lens array 130 may multifocus green light onto multiple first pixels 11, 12, 13, 14 and multiple fourth pixels 41, 42, 43, 44, single-focus blue light onto the second pixel group 112, and single-focus red light onto the third pixel group 113.

[0052] Referring to Figure 2D, a color filter array 140 may be further provided. The color filter array 140 includes a green filter (GF), a blue filter (BF), a red filter (RF), and a green filter (GF) facing the first pixel corresponding area 131, the second pixel corresponding area 132, the third pixel corresponding area 133, and the fourth pixel corresponding area 134 shown in Figure 2C, respectively. The color filter array 140 may be provided to improve color purity. The color filter array 140 may be omitted.

[0053] Figures 3A and 3B are cross-sectional views showing the pixel array of an image sensor according to an embodiment, from different cross-sectional views.

[0054] Figure 3A shows a cross-section along the line A-A' shown in Figure 2C, and Figure 3B shows a cross-section along the line B-B' shown in Figure 2C.

[0055] Referring to Figures 3A and 3B, the pixel array 1100 of the image sensor includes a sensor substrate 110 and a nano-optical lens array 130 disposed on the sensor substrate 110. A color filter array 140 may be disposed between the sensor substrate 110 and the nano-optical lens array 130.

[0056] As described in Figure 2B, the sensor substrate 110 includes a first pixel group 111, a second pixel group 112, a third pixel group 113, and a fourth pixel group 114. The first pixel group 111 includes four first pixels 11, 12, 13, and 14; the second pixel group 112 includes four second pixels 21, 22, 23, and 24; the third pixel group 113 includes four third pixels 31, 32, 33, and 34; and the fourth pixel group 114 may include four fourth pixels 41, 42, 43, and 44.

[0057] The nano-optical lens array 130 includes first to fourth pixel corresponding regions 131, 132, 133, and 134. The nano-optical lens array 130 includes a plurality of nanopost NPs, which are arranged in the first to fourth pixel corresponding regions 131, 132, 133, and 134. Each of the first to fourth pixel corresponding regions 131, 132, 133, and 134 may contain at least one or more nanopost NPs.

[0058] Due to the shape and arrangement of the nanoposts NP, incident light is separated by wavelength and focused onto the first to fourth pixel groups 111, 112, 113, and 114. For example, green light can be multifocused onto multiple first pixels 11, 12, 13, and 14 of the first pixel group 111, and multiple fourth pixels 41, 42, 43, and 44 of the fourth pixel group 114, blue light can be single-focused onto the second pixel group 112, and red light can be single-focused onto the third pixel group 113. In other words, of the light (Li) incident on a single pixel-corresponding group 130G as defined in Figure 2C, a portion of the green light may be multifocused on four first pixels 11, 12, 13, and 14, another portion of the green light may be multifocused on four fourth pixels 41, 42, 43, and 44, the blue light may be single-focused on the second pixel group 112, and the red light may be single-focused on the third pixel group 113.

[0059] In other words, the nanopost arrangements within the first to fourth pixel-corresponding regions 131, 132, 133, and 134 can be set up such that a phase distribution suitable for such a light-gathering distribution is formed at the position immediately after the incident light passes through the nanooptical lens array 130.

[0060] Since the refractive index of a material varies depending on the wavelength of the light it reacts with, the nano-optical lens array 130 can provide different phase distributions for light of different wavelengths. That is, even with the same material, the refractive index differs depending on the wavelength of the light that reacts with the material, and the phase delay that occurs when light passes through the material also differs depending on the wavelength, so different phase distributions can be formed for each wavelength. For example, the refractive index of the first pixel-corresponding region 131 for first wavelength light and the refractive index of the first pixel-corresponding region 131 for second wavelength light are different from each other, and the phase delay experienced by first wavelength light passing through the first pixel-corresponding region 131 and the phase delay experienced by second wavelength light passing through the first pixel-corresponding region 131 are different from each other. Therefore, by designing the nano-optical lens array 130 considering such optical characteristics, it is possible to provide different phase distributions for light of different colors.

[0061] Multiple nanoposts NPs provided in the nano-optical lens array 130 can be arranged according to a specific rule so as to form different phase distributions for light of multiple wavelengths. Here, the rule applies to parameters such as the shape, size (width, height), spacing, and arrangement of the nanoposts NPs, and these parameters can be determined by the color-specific phase distribution (Phase Profile) that is to be realized through the nano-optical lens array 130.

[0062] Nanoposts NP can have sub-wavelength shapes and dimensions. Here, sub-wavelength refers to wavelengths smaller than the wavelength band of light being branched. Nanoposts NP can also be cylindrical with a sub-wavelength cross-sectional diameter. However, the shape of nanoposts NP is not limited to this; they can also be elliptical or polygonal. Nanoposts NP can also have symmetrical or asymmetrical cross-sectional shapes. Although nanoposts NP are illustrated with a rectangular cross-section so that their vertical width is constant in the height direction (Z direction), this is illustrative. Contrary to the illustration, nanoposts NP do not have a constant vertical width in the height direction; for example, the cross-sectional shapes aligned in the height direction can be trapezoidal or inverted trapezoidal. When the incident light is visible light, the cross-sectional diameter of the nanopost can be smaller than, for example, 400 nm, 300 nm, or 200 nm. On the other hand, the height of the nanopost can be 500 nm to 1500 nm, and the height can be greater than the diameter of the cross-section. Although not shown in the diagram, a nanopost NP is also a combination of two or more posts stacked in the height direction (Z direction). The height of a nanopost NP can reach several times the sub-wavelength or even the wavelength. For example, the height of a nanopost NP may be five times or less, four times or less, or three times or less, the central wavelength of the wavelength band to which the nanooptical lens array 130 branches. Although the nanopost NPs are all shown with similar heights, they are not limited to this. The details of the nanopost NP can be determined by considering detailed process conditions, along with the phase distribution for color separation.

[0063] The spaces between nanoposts NPs can be filled with surrounding materials having a different refractive index than the nanoposts NPs. Nanoposts NPs may consist of materials with a higher refractive index than the surrounding materials. For example, nanoposts NPs may include C-Si, p-Si, a-Si, and III-V compound semiconductors (such as GaP, GaN, and GaAs), SiC, TiO2, SiN, and / or combinations thereof. Nanoposts NPs with a refractive index difference from the surrounding materials can alter the phase of light passing through them. This is due to a phase delay caused by the sub-wavelength shape and dimensions of the nanoposts NPs, and the degree of phase delay is determined by the detailed shape and dimensions, arrangement, etc., of the nanoposts NPs. The surrounding materials of the nanoposts NPs may consist of dielectric materials having a lower refractive index than the nanoposts NPs. For example, the surrounding materials may include SiO2 or air. However, this is illustrative, and the materials of the nanoposts NPs and surrounding materials can be set so that the nanoposts NPs have a lower refractive index than the surrounding materials.

[0064] A transparent spacer layer 120 may be placed between the sensor substrate 110 and the nano-optical lens array 130. The spacer layer 120 supports the nano-optical lens array 130 and may have a thickness that satisfies the distance requirement d between the sensor substrate 110 and the nano-optical lens array 130, i.e., the distance d between the upper surface of the sensor substrate 110 and the lower surface of the nano-optical lens array 130.

[0065] The spacer layer 120 can be made of a dielectric material that is transparent to visible light, such as SiO2 or siloxane-based spin-on glass (SOG), which has a lower refractive index than the nanopost NPs and low absorption in the visible light band. If the surrounding material layer filling the space between the nanopost NPs is made of a material with a higher refractive index than the nanopost NPs, the spacer layer 120 can be made of a material with a lower refractive index than such a surrounding material layer.

[0066] The distance d between the lower surface of the nano-optical lens array 130 and the upper surface of the sensor substrate 110 is determined based on the focal length of the light focused by the nano-optical lens array 130, and is, for example, half or less of the focal length of green light. Alternatively, for example, it is roughly 70% to 180% of the pixel PX pitch. Furthermore, the efficiency of multifocusing of green light on the first pixels 11, 12, 13, and 14 of the first pixel group 111 and the fourth pixels 41, 42, 43, and 44 of the first pixel group 114, single focusing of blue light on the second pixel group 112, and single focusing of red light on the third pixel group 113 may be considered when setting the distance d between the lower surface of the nano-optical lens array 130 and the upper surface of the sensor substrate 110. The thickness of the spacer layer 120 can be determined by considering a predetermined distance d, the thickness and effective refractive index of the color filter array 140, and the effective refractive index of the spacer layer 120.

[0067] The shape and arrangement of the nanopost NPs of the nanooptical lens array 130 can be set so that the aforementioned focusing pattern is realized and the focal lengths for light of different wavelengths are the same. For example, the focal length f1 for green light and the focal length f2 for blue light of the nanooptical lens array 130 are the same or nearly the same. For example, f2 is in the range of 80% to 120% of f1. The focal length f1 for green light and the focal length f3 for red light of the nanooptical lens array 130 are the same or nearly the same. For example, f3 is in the range of 80% to 120% of f1.

[0068] The focal length f of a nano-optical lens for a given wavelength of light can be expressed by the following approximate mathematical formula.

[0069]

number

[0070] If the focal length f2 for blue light and the focal length f1 for green light are not adjusted separately, they will have very different values. For example, to obtain maximum sensitivity efficiency on the top of a Chroma Qcell with a 0.64 μm pixel size,

number

[0071] When the image sensor has different focal lengths for different colored light, the difference in the image sensor's light-gathering performance leads to increased crosstalk and difficulty in phase difference detection for autofocus. Therefore, the phase change rate (gradient) for individual hues can be adjusted to obtain a focal length f1 for green light, using green light as the reference, by adjusting the phase change rate (gradient) for each individual hue. The phase profile of the nano-optical lens array 130 for blue light f2 and for red light f3 can be adjusted so that the deviation from f1 for green light is within -20% to +20%.

[0072] Although not shown in the figures, an etching stop layer may be placed between the spacer layer 120 and the nano-optical lens array 130. Such an etching stop layer may be provided in the manufacturing process of the nano-optical lens array 130 to protect the spacer layer 120, which is the underlying structure of the nano-optical lens array 130. When manufacturing the nano-optical lens array 130 on the spacer layer 120, a dielectric layer that will become the surrounding material between the nanoposts NP is formed on the spacer layer 120 as a whole, and this is etched to a predetermined depth. In this case, if the dielectric layer is etched to a depth greater than the desired depth and the spacer layer 120 is damaged, and the thickness of the spacer layer 120 no longer conforms to the distance requirement between the nano-optical lens array 130 and the sensor substrate 110, the color separation performance may decrease. The etching stop layer consists of a material with a lower etching selectivity ratio than the material layer being etched, and is not completely removed during the etching process, thus preventing damage to the spacer layer 120 from the etching process. The etching stop layer may contain HfO2. The thickness of the etching stop layer may be determined considering the etching depth, i.e., the height of the nanoposts NP, and also considering the etching dispersion within the process wafer. The thickness of the etching stop layer may be approximately 3 nm to 30 nm.

[0073] Although not shown in the diagram, a protective layer may be further placed on the nano-optical lens array 130 to protect it. The protective layer may consist of a material that acts as an anti-reflective layer. The anti-reflective layer can improve the light utilization efficiency of the pixel array 1100 by reducing the amount of incident light reflected from the upper surface of the nano-optical lens array 130. In other words, the anti-reflective layer prevents light incident on the pixel array 1100 from being reflected from the upper surface of the nano-optical lens array 130, allowing it to pass through the nano-optical lens array 130 and be detected by the sensor substrate 110. The anti-reflective layer may also be a structure in which one or more layers are stacked, for example, consisting of one layer made of a material different from the material making up the nano-optical lens array 130, or consisting of multiple material layers with different refractive indices.

[0074] Figure 4 is a conceptual plan view showing the size of the focusing lens formed by multiple regions of a nano-optical lens array provided in the pixel array of an image sensor according to an embodiment.

[0075] The focusing patterns illustrated in Figures 3A and 3B can be explained by the concept that the nano-optical lens array 130 forms effective focusing lenses of different sizes for each color. The first pixel-corresponding region 131 has an effective diameter of p and can form four first lenses EL1 that focus green light. The second pixel-corresponding region 132 has an effective diameter of 2p and can form a second lens EL2 that focuses blue light. The third pixel-corresponding region 133 has an effective diameter of 2p and can form a third lens EL3 that focuses red light. The fourth pixel-corresponding region 134 has an effective diameter of p and can form four fourth lenses EL4 that focus green light.

[0076] The illustrated first lens EL1, second lens EL2, third lens EL3, and fourth lens EL4 conceptually illustrate how the nano-optical lens array 130 forms different focusing patterns for light of different wavelengths, and the effective diameters of the first lens EL1, second lens EL2, third lens EL3, and fourth lens EL4 are not limited to the sizes shown.

[0077] A structure comprising a sensor substrate 110 with the pixel array according to the embodiment and a nano-optical lens array 130 that forms the aforementioned light-gathering pattern is called a Chroma-Qcell structure. For example, a structure comprising a sensor substrate 110 with the same pixel array as the embodiment, but in which lenses with an effective diameter of p are formed for all colors, is called a Tetra structure. The Tetra structure has advantages in terms of resolution. A structure comprising a sensor substrate 110 with the same pixel array as the embodiment, but in which lenses with an effective diameter of 2p are formed for all colors, is called a Qcell structure. The Qcell structure has advantages in autofocus signal generation.

[0078] With a structure like that of the embodiment, the disadvantages of the Tetra structure in generating autofocus signals and the potential for reduced resolution with the Qcell structure can be compensated for.

[0079] Figures 5A, 5B, and 5C exemplify the phase distributions at the positions immediately after blue light, green light, and red light pass through the nano-optical lens array, respectively.

[0080] Referring to Figure 5A, in the illustrated cross-section, the blue light exhibits a maximum phase of 2π at a position opposite the center of the second pixel-corresponding region 132. The phase value decreases as the distance from this position increases, and the distance between the maximum phase position and the position exhibiting a phase difference of π from the maximum phase is denoted as s1. s1 is, for example, greater than p. s1 is greater than p, less than 1.5p, or less than 1.25p. Typically, such a phase difference distance is known to be approximately p in Qcell structures, and this embodiment may exhibit a steeper blue light phase profile than that shown in typical Qcell structures.

[0081] Referring to Figure 5B, in the illustrated cross-section, the green light exhibits a maximum phase of 2π at four positions opposite the centers of the four first pixels 11, 12, 13, and 14 in the first pixel-corresponding region 131. The phase value decreases as the distance from these positions increases away from the first pixel-corresponding region 131, and the distance between the maximum phase position and the position exhibiting the phase difference π from the maximum phase is denoted by s². s² is, for example, greater than p / 2 and approximately equal to p.

[0082] Referring to Figure 5C, in the illustrated cross-section, the red light exhibits a maximum phase of 2π at a position opposite the center of the third pixel-corresponding region 133. The phase value decreases as the distance from this position increases, and the distance between the maximum phase position and the position exhibiting a phase difference of π from the maximum phase is represented by s3. s3 is, for example, greater than p. s3 is greater than p and less than 1.5p, or less than 1.25p. Typically, such a phase difference distance is known to be approximately p in Qcell structures. This embodiment can exhibit a steeper red light phase profile than that shown in typical Qcell structures.

[0083] Such a phase distribution can be designed so that the nano-optical lens array 130 forms a focusing pattern as described in Figure 4, and more precisely, to achieve nearly the same focal length for green, blue, and red light. For example, when p is 0.64 μm, the focal length of the nano-optical lens array 130 for green light is 1 μm ± 400 nm, the focal length of the nano-optical lens array 130 for blue light is 1 μm ± 400 nm, and the focal length of the nano-optical lens array for red light is 1 μm ± 400 nm.

[0084] Figure 6 is a plan view illustrating an exemplary nanopost arrangement configuration of a nano-optical lens array provided in the pixel array of an image sensor according to an embodiment.

[0085] The nanopost NPs in the second pixel-corresponding region 132 and the third pixel-corresponding region 133 may be arranged to have four-fold symmetry. The nanopost NPs in the second pixel-corresponding region 132 may have rotational symmetry of 90°, 180°, and 270° with respect to the center of the second pixel-corresponding region 132. The nanopost NPs in the third pixel-corresponding region 133 may have rotational symmetry of 90°, 180°, and 270° with respect to the center of the third pixel-corresponding region 133.

[0086] The nanopost NPs in the first pixel-corresponding region 131 and the fourth pixel-corresponding region 134 may be arranged to have twofold symmetry. The nanopost NPs in the first pixel-corresponding region 131 may have 180° rotational symmetry with respect to the center of the first pixel-corresponding region 131. The nanopost NPs in the fourth pixel-corresponding region 134 may have 180° rotational symmetry with respect to the center of the fourth pixel-corresponding region 134.

[0087] The nanoposts NP in the first pixel-corresponding region 131 may be arranged to have four-fold symmetry from a portion of its central region A. This portion of region Q is a rectangular region as shown, encompassing the center of the first pixel-corresponding region 131 and representing 1 / 4 of the area of ​​the entire first pixel-corresponding region 131. This 1 / 4 is illustrative and may be a smaller area. The shape and area of ​​the illustrated portion of region Q are illustrative and not limited thereto. For example, a region located in the center may have a different shape and area while exhibiting four-fold symmetry.

[0088] The nanopost NPs in the fourth pixel-corresponding region 134 can also be arranged to have a similar symmetry to those in the first pixel-corresponding region 131. The arrangement of the nanopost NPs in the first pixel-corresponding region 131 and the nanopost NPs in the fourth pixel-corresponding region 134 are also related by being rotated 90° from each other.

[0089] The largest nanopost NP in the first pixel-corresponding region 131 is denoted as a1, and these can be positioned to align with the centers of the four opposing first pixels 11, 12, 13, and 14.

[0090] The largest nanopost NP in the fourth pixel corresponding region 134 is shown as a4, and these can be positioned to align with the centers of the four opposing fourth pixels 41, 42, 43, and 44.

[0091] The largest nanopost NP among the nanopost NPs in the second pixel corresponding region 132 is denoted as a2, and these can be positioned to align with the centers of the four opposing second pixels 21, 22, 23, and 24.

[0092] The largest nanopost NP among the nanoposts NP in the third pixel corresponding region 133 is denoted as a3, and these can be positioned to align with the centers of the four opposing third pixel groups 113. Nanopost a3 may be larger than nanoposts a1, a2, and a3.

[0093] The first period k1, second period k2, third period k3, and fourth period k4 displayed in the first pixel-corresponding region 131, second pixel-corresponding region 132, third pixel-corresponding region 133, and fourth pixel-corresponding region 134 are defined as the distance in the first direction (X direction) between the centers of the most adjacent nanopost NPs within each region.

[0094] The nanopost NPs in the second pixel-corresponding region 132 and the third pixel-corresponding region 133 can be periodically arranged with a second period k2 and a third period k3, respectively.

[0095] The first period k1 and the second period k2 can be different from each other. The first period k1 can be less than or equal to the second period k2, and smaller than the first period k1. The first period k1 and the fourth period k4 are identical to each other. The second period k2 and the third period k3 are identical to each other.

[0096] The number of nanopost NPs in the first pixel-corresponding region 131 is greater than the number of nanopost NPs in the second pixel-corresponding region 132 and the third pixel-corresponding region 133.

[0097] Figure 7 is a plan view illustrating an exemplary nanopost arrangement configuration of a nanooptical lens array provided in the pixel array of an image sensor according to another embodiment.

[0098] The nano-optical lens array 130A differs from the nano-optical lens array 130 in Figure 6 at the positions of nanopost a1 and nanopost a4.

[0099] In other words, the largest nanopost a1 among the nanoposts NP in the first pixel-corresponding region 131 is not aligned with the centers of the four opposing first pixels 11, 12, 13, and 14, but is shifted toward the center of the first pixel-corresponding region 131.

[0100] Similarly, among the nanoposts NP in the fourth pixel-corresponding region 134, the largest nanopost a4 is not aligned with the centers of the four opposing fourth pixels 41, 42, 43, and 144, but is shifted toward the center of the fourth pixel-corresponding region 134.

[0101] The shifted distance can be finely adjusted considering the focal length related to green light. For example, the positions of nanoposts a1 and a4 can be finely adjusted to adjust the focal length related to green light shown in the nano-optical lens array 130 of the nanopost NP arrangement as shown in Figure 6. That is, the positions of nanoposts a1 and a4 can be finely adjusted so that the focal length related to green light of the nano-optical lens array 130A is as close as possible to the focal length related to blue light and the focal length related to red light of the nano-optical lens array 130A.

[0102] The nanopost NP arrangements illustrated in Figures 6 and 7 are presented as examples of achieving color-specific focusing patterns and nearly identical focal lengths for light of different wavelengths, as explained in Figure 4. However, they are not limited to these examples, and various modifications are possible.

[0103] Figure 8 is a plan view illustrating a conceptual structure of a nano-optical lens array provided in the pixel array of an image sensor according to yet another embodiment.

[0104] The nano-optical lens array 130B of this embodiment differs from the previously described nano-optical lens array 130 in that it further includes a supplementary structure region AUX1.

[0105] The nano-optical lens array 130B includes a main structure region MA and a supplementary structure region AUX1. In the main structure region MA, as described in Figure 4, the first pixel-corresponding region 131 and the fourth pixel-corresponding region 134 are configured to multifocus green light, the second pixel-corresponding region 132 is configured to single-focus blue light, and the third pixel-corresponding region 133 is configured to single-focus red light. In the supplementary structure region AUX1, the first pixel-corresponding region 131, the second pixel-corresponding region 132, the third pixel-corresponding region 133, and the fourth pixel-corresponding region 134 are configured to single-focus green light, blue light, red light, and green light, respectively. In other words, the nanoposts in a supplementary structure region AUX1 are arranged such that, of the light incident on a single supplementary structure region AUX1, a portion of the green light is single-focused on the first pixel group 111, the other portion of the green light is single-focused on the first pixel group 114, the blue light is single-focused on the second pixel group 112, and the red light is single-focused on the third pixel group 113.

[0106] In the aforementioned example where the nano-optical lens array 130 is composed solely of the main structural region MA, a supplementary structural region AUX1 is proposed to compensate for the fact that the green pixels are not utilized as autofocus pixels.

[0107] Figure 8 illustrates three main structural regions (MA) and one supplementary structural region (AUX1), but this is illustrative. A structure may include multiple main structural regions (MA) and multiple different supplementary structural regions (AUX1), and the number of main structural regions (MA) and supplementary structural regions (AUX1) may differ from each other. The number of main structural regions (MA) is greater than the number of supplementary structural regions (AUX1), and the number of supplementary structural regions (AUX1) is 30% or less, 20% or less, or 10% or less of the total. However, it is not limited to these cases.

[0108] Figure 9 is a plan view illustrating a conceptual structure of a nano-optical lens array provided in the pixel array of an image sensor according to yet another embodiment.

[0109] The nano-optical lens array 130C of this embodiment differs from the previously described nano-optical lens array 130 in that it further includes a supplementary structure region AUX2.

[0110] The nano-optical lens array 130C includes a main structure region MA and a supplementary structure region AUX2. In the main structure region MA, as described in Figure 4, the first pixel-corresponding region 131 and the fourth pixel-corresponding region 134 are configured to multifocus green light, the second pixel-corresponding region 132 is configured to single-focus blue light, and the third pixel-corresponding region 133 is configured to single-focus red light. In the supplementary structure region AUX2, the second pixel-corresponding region 132, the third pixel-corresponding region 133, and the fourth pixel-corresponding region 134 are configured to single-focus blue light, red light, and green light, respectively, while the first pixel-corresponding region 131 is configured to multifocus green light. In other words, the nanoposts in a supplementary structure region AUX2 are arranged such that, of the light incident on a single supplementary structure region AUX2, a portion of the green light is multifocused on the first pixel group 111, another portion of the green light is single-focused on the first pixel group 114, the blue light is single-focused on the second pixel group 112, and the red light is single-focused on the third pixel group 113.

[0111] Similar to the embodiment in Figure 8, this embodiment compensates for the fact that when the nano-optical lens array 130 is composed only of the main structural region MA, the green pixels are not utilized as autofocus pixels. Unlike the embodiment in Figure 8, the supplementary structural region AUX2 is presented in a structure in which four green pixels included in one of the two green pixel groups can be utilized as autofocus pixels.

[0112] Figure 9 illustrates three main structural regions (MA) and one supplementary structural region (AUX2), but this is illustrative. Multiple supplementary structural regions (AUX2) distinct from multiple main structural regions (MA) may be included, and the number of main structural regions (MA) and supplementary structural regions (AUX2) may differ from each other. The number of main structural regions (MA) may be greater than the number of supplementary structural regions (AUX2), and the number of supplementary structural regions (AUX2) may be 30% or less, 20% or less, or 10% or less of the total. However, this is not limited to these cases.

[0113] Other embodiments of the nano-optical lens array may include a structure in which both the nano-optical lens array 130B shown in Figure 9 and the nano-optical lens array 130C shown in Figure 10 are mixed. That is, other embodiments of the nano-optical lens array may include the nano-optical lens array 130 as shown in Figure 4 as the main structural region, and may include the supplementary structural region AUX1 illustrated in Figure 8 and the supplementary structural region AUX2 illustrated in Figure 9.

[0114] Figure 10 is a cross-sectional view illustrating an illustrative pixel array of an image sensor according to yet another embodiment.

[0115] The nano-optical lens array 130D provided in the pixel array 1100 of the image sensor of this embodiment differs from the aforementioned nano-optical lens array 130 in that the nanopost NPs are arranged in two layers. For example, the nanopost NPs of the nano-optical lens array 130D may be arranged in a first lens layer LE1 and a second lens layer LE2.

[0116] An etching stop layer may be placed between the first lens layer LE1 and the second lens layer LE2, although this is not shown in the diagram. The etching stop layer may be provided to prevent damage to the first lens layer LE1 during the manufacturing process of the second lens layer LE2. When forming the second lens layer LE2 on the first lens layer LE1, a dielectric layer, which will be the peripheral material filling the spaces between nanoposts NP, is formed entirely on the first lens layer LE1, and this is etched to a predetermined depth. In this case, if the dielectric layer is etched beyond the desired depth and the first lens layer LE1 is damaged, and the height of the first lens layer LE1 no longer conforms to the desired height requirement, the color separation performance may decrease. The etching stop layer formed on the first lens layer LE1 consists of a material having a lower etching selectivity ratio than the material layer being etched, and a portion of it remains without being completely removed during the etching process, thus preventing damage to the first lens layer LE1. The etching stop layer may contain HfO2. The thickness of the etching stop layer is determined considering the etching depth, i.e., the height of the second lens layer LE2, and may also be determined considering the etching dispersion within the process wafer. The etching stop layer may have a thickness of approximately 3 nm to 30 nm.

[0117] Although the nanoposts NP in the first lens layer LE1 and the second lens layer LE2 are shown to have the same arrangement, this is illustrative and not limited to such arrangements. By arranging the nanoposts in two layers, the aspect ratio of the nanoposts NP can be substantially increased, and the design freedom for the nano-optical lens array 130D can be increased so that the desired light-gathering characteristics are well realized.

[0118] The image sensor 1000 according to this embodiment can be used in a variety of electronic devices as part of a camera module, along with modular lenses of various performance levels.

[0119] Figure 11 is a block diagram showing an example of an electronic device ED01 including an image sensor 1000, and Figure 12 is a block diagram illustrating a camera module ED80 provided in the electronic device ED01 of Figure 11.

[0120] Referring to Figure 11, in network environment ED00, electronic device ED01 may communicate with other electronic device ED02 via a first network ED98 (such as a short-range wireless communication network), or with other electronic devices ED04 and / or server ED08 via a second network ED99 (such as a long-range wireless communication network). Electronic device ED01 may communicate with electronic device ED04 via server ED08. Electronic device ED01 may include a processor ED20, memory ED30, input device ED50, sound output device ED55, display device ED60, audio module ED70, sensor module ED76, interface ED77, haptic module ED79, camera module ED80, power management module ED88, battery ED89, communication module ED90, subscriber identification module ED96, and / or antenna module ED97. Some of these components (such as the display device ED60) may be omitted from electronic device ED01, or other components may be added. Some of these components can be realized by a single integrated circuit. For example, the sensor module ED76 (fingerprint sensor, iris sensor, light sensor, etc.) can be realized by being embedded in the display device ED60 (display, etc.).

[0121] The processor ED20 can perform various data processing or calculations by controlling one or more other components (hardware, software components, etc.) of the electronic devices ED01 connected to the processor ED20 through software (such as the program ED40). As part of the data processing or calculations, the processor ED20 may load instructions and / or data received from other components (such as the sensor module ED76 or the communication module ED90) into volatile memory ED32, process the instructions and / or data stored in volatile memory ED32, and store the resulting data in non-volatile memory ED34. The processor ED20 may include a main processor ED21 (such as a central processing unit or application processor) and auxiliary processors ED23 (such as a graphics processing unit, image signal processor, sensor hub processor, or communication processor) that can operate independently or together with it. The auxiliary processor ED23 may use less power than the main processor ED21 and perform specialized functions.

[0122] The auxiliary processor ED23 can control the functions and / or states of some components of the electronic device ED01 (such as the display device ED60, sensor module ED76, and communication module ED90) on behalf of the main processor ED21 when the main processor ED21 is inactive (sleep state), or together with the main processor ED21 when the main processor ED21 is active (application execution state). The auxiliary processor ED23 (such as an image signal processor or communication processor) may be implemented as part of other functionally related components (such as a camera module ED80 or communication module ED90).

[0123] Memory ED30 can store various data required by the components of the electronic device ED01 (such as the processor ED20 and the sensor module ED76). This data may include, for example, software (such as the program ED40) and input and / or output data for the instructions related thereto. Memory ED30 may also include volatile memory ED32 and / or non-volatile memory ED34.

[0124] Program ED40 is stored in memory ED30 and may include the operational system ED42, middleware ED44, and / or application ED46.

[0125] The input device ED50 may receive instructions and / or data used by components of the electronic device ED01 (such as the processor ED20) from outside the electronic device ED01 (such as a user). The input device ED50 may include a microphone, mouse, keyboard, and / or digital pen (such as a stylus pen).

[0126] The audio output device ED55 can output an audio signal to the outside of the electronic device ED01. The audio output device ED55 may include a speaker and / or a receiver. The speaker may be used for general purposes such as multimedia playback or recording and playback, and the receiver may be used to receive incoming telephone calls. The receiver may be coupled to part of the speaker or may be embodied as a separate, independent device.

[0127] The display device ED60 may provide information visually to the outside of the electronic device ED01. The display device ED60 may include a display, a hologram device, or a projector and a control circuit for controlling said device. The display device ED60 may include a touch circuitry configured to sense touches and / or a sensor circuitry (such as a pressure sensor) configured to measure the intensity of the force generated by the touch.

[0128] The audio module ED70 can convert sound into electrical signals, or vice versa. The audio module ED70 can acquire sound through the input device ED50, or output sound through the speakers and / or headphones of other electronic devices (such as electronic device ED02) directly or wirelessly connected to the sound output device ED55 and / or electronic device ED01.

[0129] Sensor module ED76 can sense the operating state of electronic device ED01 (power, temperature, etc.) or external environmental conditions (user status, etc.) and generate electrical signals and / or data values ​​corresponding to the sensed state. Sensor module ED76 may include gesture sensors, gyro sensors, barometric pressure sensors, magnetic sensors, acceleration sensors, grip sensors, proximity sensors, color sensors, IR (Infrared) sensors, biosensors, temperature sensors, humidity sensors, and / or illuminance sensors.

[0130] Interface ED77 may support one or more designated protocols used to connect electronic device ED01 directly or wirelessly with other electronic devices (such as electronic device ED02). Interface ED77 may include HDMI® (High Definition Multimedia Interface), USB (Universal Serial Bus) interface, SD card interface, and / or audio interface.

[0131] The ED78 connector may include a connector that allows electronic device ED01 to be physically connected to other electronic devices (such as electronic device ED02). The ED78 connector may include an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (such as a headphone connector).

[0132] The ED79 haptic module can convert electrical signals into mechanical stimuli (such as vibration or movement) or electrical stimuli that the user perceives through touch or kinesthetic sense. The ED79 haptic module may include a motor, a piezoelectric element, and / or an electrical stimulator.

[0133] The camera module ED80 can capture still images and videos. The camera module ED80 may include a lens assembly containing one or more lenses, an image sensor 1000 as shown in Figure 1, an image signal processor, and / or a flash. The lens assembly included in the camera module ED80 can collect light emitted from a subject that is the subject of image capture.

[0134] The power management module ED88 can manage the power supplied to the electronic device ED01. The power management module ED88 can be implemented as part of a Power Management Integrated Circuit (PMIC).

[0135] Battery ED89 can supply power to the components of the electronic device ED01. Battery ED89 may include a non-rechargeable primary battery, a rechargeable secondary battery, and / or a fuel cell.

[0136] The communication module ED90 can support the establishment of direct (wired) communication channels and / or wireless communication channels between electronic device ED01 and other electronic devices (electronic device ED02, electronic device ED04, server ED08, etc.), and the execution of communication over the established communication channels. The communication module ED90 operates independently of processor ED20 (application processor, etc.) and may include one or more communication processors that support direct and / or wireless communication. The communication module ED90 may include wireless communication modules ED92 (cellular communication module, near-field wireless communication module, GNSS (Global Navigation Satellite System, etc.) communication module) and / or wired communication modules ED94 (LAN (Local Area Network) communication module, power line communication module, etc.). The relevant communication modules among these may communicate with other electronic devices via a first network ED98 (short-range communication networks such as Bluetooth®, WiFi Direct, or IrDA (Infrared Data Association)) or a second network ED99 (long-range communication networks such as cellular networks, the Internet, or computer networks (LAN, WAN, etc.)). These diverse types of communication modules may be integrated into a single component (such as a single chip) or embodied as multiple separate components (multiple chips). The wireless communication module ED92 may verify and authenticate the electronic device ED01 within a communication network such as the first network ED98 and / or the second network ED99 using subscriber information (such as an International Mobile Subscriber Identifier (IMSI)) stored in the subscriber identification module ED96.

[0137] The antenna module ED97 can transmit and / or receive signals and / or power to or from an external source (such as other electronic devices). The antenna may include an emitter consisting of a conductive pattern formed on a substrate (such as a PCB). The antenna module ED97 may include one or more antennas. If multiple antennas are included, the communication module ED90 may select an antenna from among the multiple antennas that is suitable for the communication scheme used in the communication network, such as the first network ED98 and / or the second network ED99. Signals and / or power may be transmitted and / or received between the communication module ED90 and other electronic devices via the selected antenna. Other components (such as an RFIC) may be included as part of the antenna module ED97 in addition to the antennas.

[0138] Some of the components can be interconnected via communication methods between peripheral devices (such as buses, GPIO (General Purpose Input and Output), SPI (Serial Peripheral Interface), and MIPI (Mobile Industry Processor Interface)) to exchange signals (instructions, data, etc.).

[0139] Commands or data may be transmitted to or received between electronic device ED01 and external electronic device ED04 via server ED08 connected to the second network ED99. Other electronic devices ED02 and ED04 may be of the same or different type as electronic device ED01. All or part of the operations performed by electronic device ED01 may be performed by one or more of the other electronic devices ED02, ED04, and ED08. For example, when electronic device ED01 needs to perform a certain function or service, instead of performing the function or service itself, it may request one or more other electronic devices to perform part or all of that function or service. One or more other electronic devices that receive the request may perform the additional function or service related to the request and transmit the result of its execution to electronic device ED01. Cloud computing, distributed computing, and / or client-server computing technologies may be used for this purpose.

[0140] Referring to Figure 12, the camera module ED80 may include a lens assembly 1170, a flash 1120, an image sensor 1000, an image stabilizer 1140, an AF control unit 1130, a memory 1150 (such as a buffer memory), an actuator 1180, and / or an image signal processor (ISP) 1160.

[0141] The lens assembly 1110 can collect light emitted from the subject being photographed. The camera module ED80 includes multiple lens assemblies 1110, in which case the camera module ED80 can also be a dual camera, a 360° camera, or a spherical camera. Some of the multiple lens assemblies 1110 may have the same lens attributes (angle of view, focal length, autofocus, F-number, optical zoom, etc.) or may have other lens attributes. The lens assembly 1110 may include wide-angle lenses or telephoto lenses.

[0142] The actuator 1180 can drive the lens assembly 1170. The actuator 1180 can move, for example, at least some of the optical lenses and path-changing members that make up the lens assembly 1170. The optical lenses can move along the optical axis, and the optical zoom ratio can be adjusted by moving at least some of the optical lenses included in the lens assembly 1170 to adjust the distance between adjacent lenses.

[0143] The actuator 1180 can adjust the position of any one of the optical lenses included in the lens assembly 1170 so that the image sensor 1000 is positioned at the focal length of the lens assembly 1170. The actuator 1180 can drive the lens assembly 1170 by an AF drive signal transmitted from the AF control unit 1130.

[0144] The flash 1120 may emit light used to enhance light emitted or reflected from a subject. The flash 1120 may emit visible light or infrared light. The flash 1120 may include one or more light-emitting diodes (such as RGB (Red-Green-Blue) LEDs, White LEDs, Infrared LEDs, Ultraviolet LEDs, etc.) and / or a Xenon Lamp. The image sensor 1000 is also the image sensor described in Figure 1 and may acquire an image corresponding to a subject by converting light emitted or reflected from a subject and transmitted through the lens assembly 1110 into an electrical signal.

[0145] The image stabilizer 1140 may move one or more lenses or image sensors 1000 included in the lens assembly 1110 in a specific direction, or control the operating characteristics of the image sensors 1000 (such as adjusting the read-out timing), in response to the movement of the camera module ED80 or the electronic device ED01 containing it, so as to compensate for negative effects of the movement. The image stabilizer 1140 may sense the movement of the camera module ED80 or the electronic device ED01 using a gyro sensor (not shown) or an accelerometer (not shown) located inside or outside the camera module ED80. The image stabilizer 1140 may be implemented optically.

[0146] Memory 1150 can store some or all of the image data acquired through the image sensor 1000 for subsequent image processing. For example, if multiple images are acquired at high speed, the acquired original data (Bayer-patterned data, high-resolution data, etc.) can be stored in memory 1150 and used to transmit the original data of a selected image (user-selected, etc.) to the image signal processor 1160 after displaying only the low-resolution image. Memory 1150 may be integrated into the memory ED30 of the electronic device ED01 or consist of a separate memory that operates independently.

[0147] The image signal processor 1160 can acquire images using electrical signals output from the image sensor 1000. For example, the image signal processor 1160 can work in conjunction with the image sensor 1000 to directly perform some of the image processing shown in Figures 23 to 26. It can also request image data in a specific format from the image sensor 1000 depending on the required image data format.

[0148] Furthermore, the image signal processor 1160 can perform additional image processing on video acquired through the image sensor 1000 or video data stored in the memory 1150. Image processing may include depth map generation, 3D modeling, panorama generation, feature point extraction, image synthesis, and / or image compensation (noise reduction, resolution adjustment, brightness adjustment, blurring, sharpening, softening, etc.). The image signal processor 1160 can also perform control (such as exposure time control or readout timing control) on components included in the camera module ED80 (such as the image sensor 1000).

[0149] The video processed by the image signal processor 1160 can be stored again in memory 1150 for further processing, or it can be provided as an external component of the camera module ED80 (such as memory ED30, display device ED60, electronic device ED02, electronic device ED04, server ED08, etc.). The image signal processor 1160 can be integrated into processor ED20 or configured as a separate processor operating independently of processor ED20. If the image signal processor 1160 is configured as a separate processor from processor ED20, the image processed by the image signal processor 1160 can be displayed through display device ED60 after undergoing additional image processing by processor ED20.

[0150] Furthermore, the image signal processor 1160 can receive two output signals independently from adjacent light-sensing cells within each pixel or subpixel of the image sensor 1000 and generate an autofocus signal from the difference between the two output signals. Based on the autofocus signal, the image signal processor 1160 can control the lens assembly 1110 so that its focus precisely aligns with the surface of the image sensor 1000.

[0151] The electronic device ED01 may further include one or more additional camera modules having different attributes or functions from each other. Such camera modules may also have a configuration similar to the camera module ED80 in Figure 28, and the image sensors provided therein may be embodied as CCD (Charged Coupled Device) sensors and / or CMOS (complementary metal oxide semiconductor) sensors, and may include one or more sensors selected from image sensors with different attributes, such as RGB sensors, BW (Black and White) sensors, IR sensors, or UV sensors. In such a case, one of the multiple camera modules ED80 may be a wide-angle camera and another may be a telephoto camera. Similarly, one of the multiple camera modules ED80 may be a front camera and another may be a rear camera.

[0152] Figure 13 is a block diagram of an electronic device including a multi-camera module, and Figure 14 is a detailed block diagram of one camera module provided in the electronic device of Figure 13.

[0153] Referring to Figure 13, the electronic device 1200 may include a camera module group 1300, an application processor 1400, a PMIC (Power Management Integrated Circuit) 1500, an external memory 1600, and an image generator 1700.

[0154] The camera module group 1300 may include multiple camera modules 1300a, 1300b, and 1300c. Even if the drawings illustrate an embodiment with three camera modules 1300a, 1300b, and 1300c, the embodiment is not limited thereto. In some embodiments, the camera module group 1300 may be modified to include only two camera modules. Furthermore, in some embodiments, the camera module group 1300 may be modified to include n camera modules (where n is a natural number greater than or equal to 4).

[0155] The detailed configuration of camera module 1300b will be described in more detail below with reference to Figure 14, but the following description may also apply to other camera modules 1300a and 1300c depending on the embodiment.

[0156] Referring to Figure 14, the camera module 1300b may include a prism 1305, an optical path folding element (OPFE) 1310, an actuator 1330, an image sensing device 1340, and a storage unit 1350.

[0157] The prism 1305, which includes a reflective surface 1307 of a light-reflecting material, can deform the path of light L incident from the outside.

[0158] In several embodiments, the prism 1305 can change the path of light L incident in a first direction X to a second direction (Y direction) perpendicular to the first direction (X direction). The prism 1305 can also change the path of light L incident in a first direction X to a perpendicular second direction (Y direction) by rotating the reflective surface 1307 of the light-reflecting material in direction A around the central axis 1306, or by rotating the central axis 1306 in direction B. In this case, the OPFE 1310 can also move in a third direction (Z direction) perpendicular to the first direction (X direction) and the second direction (Y direction).

[0159] In several embodiments, as illustrated, the maximum rotation angle of the prism 1305 in the A direction is 15° or less in the positive (+) A direction and greater than 15° in the negative (-) A direction, but the embodiments are not limited thereto.

[0160] In several embodiments, the prism 1305 moves approximately 20° in the positive (+) or negative (-)B direction, or between 10° and 20°, or between 15° and 20°, where the angle of movement can be the same angle in the positive (+) or negative (-)B direction, or to approximately similar angles within a range of about 1°.

[0161] In several embodiments, the prism 1305 can move the reflective surface 1307 of the light-reflecting material in a third direction (e.g., the Z direction) parallel to the extension direction of the central axis 1306.

[0162] The OPFE 1310 may include, for example, m (where m is a natural number) groups of optical lenses. The m lenses can be moved in a second direction (Y direction) to change the optical zoom ratio of the camera module 1300b. For example, if the basic optical zoom ratio of the camera module 1300b is denoted as Z, moving the m optical lenses included in the OPFE 1310 may change the optical zoom ratio of the camera module 1300b to 3Z, 5Z, or 10Z or higher.

[0163] The actuator 1330 can move the OPFE 1310 or the optical lens (hereinafter referred to as the optical lens) to a specific position. For example, the actuator 1330 can adjust the position of the optical lens so that the image sensor 1342 is positioned at the focal length of the optical lens for accurate sensing.

[0164] The image sensing device 1340 may include an image sensor 1342, control logic 1344, and memory 1346. The image sensor 1342 can sense an image of the object to be sensed using light L provided through an optical lens. The control logic 1344 can control the overall operation of the camera module 1300b. For example, the control logic 1344 can control the operation of the camera module 1300b by control signals provided through the control signal line CSLb.

[0165] Memory 1346 may store information necessary for the operation of the camera module 1300b, such as calibration data 1347. Calibration data 1347 may include information necessary for generating image data using light L supplied externally via the camera module 1300b. Calibration data 1347 may include, for example, information on the degree of rotation, focal length, and optical axis. If the camera module 1300b is implemented as a multi-state camera configuration in which the focal length changes depending on the position of the optical lens, calibration data 1347 may include focal length values ​​for each position (or state) of the optical lens and information related to autofocusing.

[0166] The storage unit 1350 can store image data sensed through the image sensor 1342. The storage unit 1350 is located outside the image sensing device 1340 and may be implemented in a stacked configuration with the sensor chips constituting the image sensing device 1340. In several embodiments, the storage unit 1350 may be implemented as an EEPROM (Electrically Erasable Programmable Read-Only Memory), but the embodiments are not limited thereto.

[0167] Referring to both Figures 13 and 14, in several embodiments, each of the multiple camera modules 1300a, 1300b, and 1300c may include an actuator 1330. Thus, each of the multiple camera modules 1300a, 1300b, and 1300c may contain identical or different calibration data 1347 resulting from the operation of the actuator 1330 contained within it.

[0168] In several embodiments, one of the camera modules 1300a, 1300b, and 1300c (e.g., 1300b) is a folded lens camera module including the aforementioned prism 1305 and OPFE 1310, while the remaining camera modules (e.g., 1300a and 1300b) are vertical camera modules that do not include the prism 1305 and OPFE 1310, but the embodiments are not limited thereto.

[0169] In several embodiments, one of the multiple camera modules 1300a, 1300b, and 1300c (for example, 1300c) is also a vertical depth camera that extracts depth information using, for example, IR (Infrared Ray).

[0170] In several embodiments, at least two of the multiple camera modules 1300a, 1300b, and 1300c (e.g., 1300a and 1300b) may have different fields of view (angles of view). In this case, for example, the optical lenses of at least two of the multiple camera modules 1300a, 1300b, and 1300c (e.g., 1300a and 1300b) may be different from each other, but are not limited to this.

[0171] Furthermore, in some embodiments, the field of view of each of the camera modules 1300a, 1300b, and 1300c may differ from one another. In this case, the optical lenses included in each of the camera modules 1300a, 1300b, and 1300c may also differ from one another, but are not limited to this.

[0172] In several embodiments, the multiple camera modules 1300a, 1300b, and 1300c may be physically separated from each other. That is, rather than the sensing area of ​​a single image sensor 1342 being divided and used by the multiple camera modules 1300a, 1300b, and 1300c, an independent image sensor 1342 may be located inside each of the multiple camera modules 1300a, 1300b, and 1300c.

[0173] Furthermore, referring to Figure 14, the application processor 1400 may include an image processing unit 1410, a memory controller 1420, and internal memory 1430. The application processor 1400 may be implemented separately from the multiple camera modules 1300a, 1300b, and 1300c. For example, the application processor 1400 and the multiple camera modules 1300a, 1300b, and 1300c may be implemented separately as individual semiconductor chips.

[0174] The image processing device 1410 may include a plurality of image processors 1411, 1412, 1413, and a camera module controller 1414.

[0175] Image data generated from each of the camera modules 1300a, 1300b, and 1300c can be provided to the image processing unit 1410 via the respective separate image signal lines ISLa, ISLb, and ISLc. Such image data transmission can be performed, for example, using a Camera Serial Interface (CSI) based on MIPI (Mobile Industry Processor Interface), but the embodiments are not limited thereto.

[0176] Image data transmitted to the image processing device 1410 may be stored in external memory 1600 before being transmitted to image processors 1411 and 1412. Image data stored in external memory 1600 may be provided to image processors 1411 and / or 1412. Image processor 1411 may correct the received image data in order to generate a video. Image processor 1412 may correct the received image data in order to generate a still image. For example, image processors 1411 and 1412 may perform pre-processing operations on the image data, such as color correction and gamma correction.

[0177] Image processor 1411 may include subprocessors. If the number of subprocessors is the same as the number of camera modules 1300a, 1300b, and 1300c, each subprocessor may process image data provided by one camera module. If the number of subprocessors is less than the number of camera modules 1300a, 1300b, and 1300c, at least one of the subprocessors may process image data provided by multiple camera modules using a time-division sharing technique. Image data processed by image processor 1411 and / or image processor 1412 may be stored in external memory 1600 before being transmitted to image processor 1413. Image data stored in external memory 1600 may be transmitted to image processor 1412. Image processor 1412 may perform post-processing operations on the image data, such as noise reduction and sharpening.

[0178] Image data processed by the image processor 1413 may be provided to the image generator 1700. The image generator 1700 may use the image data provided by the image processor 1413 via generating information or a mode signal to generate a final image.

[0179] Specifically, the image generator 1700 can generate an output image by merging at least a portion of the image data generated from camera modules 1300a, 1300b, and 1300c, which have different field of view angles, based on image generation information or mode signals. Alternatively, the image generator 1700 can generate an output image by selecting any one of the image data generated from camera modules 1300a, 1300b, and 1300c, which have different field of view angles, based on image generation information or mode signals.

[0180] In several embodiments, the image generation information may include a zoom signal or zoom factor. In several embodiments, the mode signal may also be a signal based on a mode selected by the user, for example.

[0181] If the image generation information is a zoom signal (zoom factor), and each camera module 1300a, 1300b, and 1300c has a different field of view (field of view angle), the image generator 1700 can perform different operations depending on the type of zoom signal. For example, if the zoom signal is a first signal, the image generator 1700 can merge the image data output from camera module 1300a and the image data output from camera module 1300c, and then generate an output image using the merged image signal and the image data output from camera module 1300b that was not used in the merging. If the zoom signal is a second signal different from the first signal, the image generator 1700 can not perform such image data merging, but instead select one of the image data output from each camera module 1300a, 1300b, and 1300c to generate an output image. However, the embodiment is not limited thereto, and the method of processing the image data can be modified in any way as needed.

[0182] The camera module controller 1414 can provide control signals to the respective camera modules 1300a, 1300b, and 1300c. The control signals generated by the camera module controller 1414 can be provided to the corresponding camera modules 1300a, 1300b, and 1300c through the mutually separated control signal lines CSLa, CSLb, and CSLc.

[0183] In several embodiments, the control signals provided from the camera module controller 1414 to the multiple camera modules 1300a, 1300b, and 1300c may include mode information provided by mode signals. Based on such mode information, the multiple camera modules 1300a, 1300b, and 1300c may operate in a first operating mode and a second operating mode in relation to the sensing speed.

[0184] Multiple camera modules 1300a, 1300b, and 1300c can, in a first operating mode, generate an image signal at a first speed (for example, an image signal at a first frame rate), encode it at a second speed higher than the first speed (for example, encode an image signal at a second frame rate higher than the first frame rate), and transmit the encoded image signal to the application processor 1400. In this case, the second speed is also 30 times or less the first speed.

[0185] The application processor 1400 stores the received image signal, i.e., the encoded image signal, in an internal memory 1430 or an external storage 1600. Subsequently, it can read the encoded image signal from the memory 1430 or storage 1600, decode it, and display the image data generated based on the decoded image signal. For example, the image processors 1411 and 1412 of the image processing unit 1410 can perform decoding and also perform image processing on the decoded image signal.

[0186] Multiple camera modules 1300a, 1300b, and 1300c may, in a second operating mode, generate image signals at a third speed lower than the first speed (for example, generating image signals at a third frame rate lower than the first frame rate) and transmit the image signals to the application processor 1400. The image signals provided to the application processor 1400 are also unencoded signals. The application processor 1400 may perform image processing on the received image signals or store the image signals in memory 1430 or storage 1600.

[0187] The PMIC 1500 can supply power, such as a power supply voltage, to each of the multiple camera modules 1300a, 1300b, and 1300c. For example, under the control of the application processor 1400, the PMIC 1500 can supply first power to camera module 1300a via the power signal line PSLa, second power to camera module 1300b via the power signal line PSLb, and third power to camera module 1300c via the power signal line PSLc.

[0188] The PMIC 1500 can generate and adjust power levels for each of the multiple camera modules 1300a, 1300b, and 1300c in response to a power control signal PCON from the application processor 1400. The power control signal PCON may include power adjustment signals for each operating mode of the multiple camera modules 1300a, 1300b, and 1300c. For example, the operating mode may include a low power mode, in which case the power control signal PCON may include information relating to the camera modules operating in low power mode and the power levels to be set. The power levels provided to each of the multiple camera modules 1300a, 1300b, and 1300c may be the same or different from each other. Furthermore, the power levels may be changed dynamically.

[0189] Even though the aforementioned image sensors and electronic devices including them are described based on embodiments illustrated in the drawings, these are merely illustrative, and a person with ordinary skill in the art will understand that a variety of modifications and equivalent other embodiments are possible. Therefore, the disclosed embodiments should be considered in an explanatory rather than restrictive manner. The scope of rights is indicated in the claims, not in the foregoing description, and all differences within an equivalent scope should be interpreted as being included within the scope of rights. [Explanation of Symbols]

[0190] 1000 Image Sensors 1100 pixel array 110 Sensor board 120 Spacer layer 130, 130A, 130B, 130C, 130D Nano Optical Lens Arrays 140 Color Filter Array

Claims

1. A sensor substrate including a first pixel group containing multiple consecutively arranged first pixels, a second pixel group containing multiple consecutively arranged second pixels, a third pixel group containing multiple consecutively arranged third pixels, and a fourth pixel group containing multiple consecutively arranged fourth pixels, An image sensor comprising a nanooptical lens array including a first pixel-corresponding region facing the first pixel group, a second pixel-corresponding region facing the second pixel group, a third pixel-corresponding region facing the third pixel group, and a fourth pixel-corresponding region facing the fourth pixel group, wherein each of the first to fourth pixel-corresponding regions includes one or more nanoposts, and separates incident light by wavelength, multifocusing green light on the plurality of first pixels and the plurality of fourth pixels, single-focusing blue light on the second pixel group, and single-focusing red light on the third pixel group.

2. The aforementioned nano-optical lens array is The image sensor according to claim 1, wherein the focal length for blue light is 80% or more and 120% or less of the focal length for green light.

3. The image sensor according to claim 1, wherein the nanoposts in the first pixel-corresponding region are arranged to have four-fold symmetry within a predetermined region including the center of the first pixel-corresponding region, with respect to the center of the first pixel-corresponding region.

4. The image sensor according to claim 3, wherein the area of ​​the predetermined region is 1 / 4 of the total area of ​​the first pixel-corresponding region.

5. The image sensor according to claim 3, wherein the nanoposts in the first pixel-corresponding region are arranged to have twofold symmetry with respect to the center of the first pixel-corresponding region.

6. The image sensor according to claim 1, wherein the distance showing the phase difference π in the blue light phase distribution in a cross-sectional view immediately after passing through the second pixel-corresponding region is greater than p and less than 1.25p, when the width of one part of the second pixel-corresponding region is 2p.

7. The image sensor according to claim 1, wherein the distance showing the phase difference π in the red light phase distribution in a cross-sectional view immediately after passing through the third pixel-corresponding region is less than 1.25p, when the width of one part of the third pixel-corresponding region is 2p.

8. Among the nanoposts in the region corresponding to the first pixel, the largest nanopost is: The image sensor according to claim 1, wherein the sensors are arranged to align with the centers of the plurality of first pixels that are opposite the first pixel corresponding region.

9. Among the nanoposts in the region corresponding to the first pixel, the largest nanopost is: Compared to the center of the plurality of first pixels facing the first pixel corresponding region, The image sensor according to claim 1, wherein the first pixel-corresponding region is arranged to be shifted by a predetermined distance in the direction toward the center.

10. The first directional distance between the centers of the most adjacent nanoposts in the first pixel-corresponding region is the first period. The first directional distance between the centers of the most adjacent nanoposts in the second pixel-corresponding region is the second period. The first directional distance between the centers of the most adjacent nanoposts in the third pixel-corresponding region is the third period. The image sensor according to claim 1, wherein the first period and the second period are different from each other.

11. The image sensor according to claim 10, wherein the first period is smaller than the second period.

12. The image sensor according to claim 10, wherein the second period and the third period are identical to each other.

13. Of the nanoposts in the aforementioned second pixel-corresponding region, the largest nanopost is: The image sensor according to claim 1, wherein the sensors are arranged to align with the centers of the plurality of second pixels that are opposite the second pixel corresponding region.

14. Of the nanoposts in the aforementioned third pixel-corresponding region, the largest nanopost is: The image sensor according to claim 1, which is arranged to be aligned with the center of the third pixel group facing the third pixel corresponding region.

15. The image sensor according to claim 1, wherein the largest nanopost among the plurality of nanoposts is located in the region corresponding to the third pixel.

16. The image sensor according to claim 1, wherein the number of nanoposts in the first pixel-corresponding region is greater than the number of nanoposts in the second pixel-corresponding region.

17. The first pixel group, the second pixel group, the third pixel group, and the fourth pixel group each consist of multiple individuals. The aforementioned nano-optical lens array is The image sensor according to claim 1, further comprising a supplementary structural region in which a plurality of nanoposts are arranged to separate incident light by wavelength, focusing a portion of the green light onto one of the plurality of first pixel groups, focusing another portion of the green light onto one of the plurality of fourth pixel groups, focusing the blue light onto one of the plurality of second pixel groups, and focusing the red light onto one of the plurality of third pixel groups.

18. The first pixel group, the second pixel group, the third pixel group, and the fourth pixel group each consist of multiple individuals. The aforementioned nano-optical lens array is The image sensor according to claim 1, further comprising a supplementary structural region in which a plurality of nanoposts are arranged to separate incident light by wavelength, to single-focus a portion of the green light onto one of the plurality of first pixel groups, to multi-focus another portion of the green light onto a plurality of fourth pixels in the plurality of fourth pixel groups, to single-focus the blue light onto one of the plurality of second pixel groups, and to single-focus the red light onto one of the plurality of third pixel groups.

19. The image sensor according to claim 1, further comprising a color filter array disposed between the sensor substrate and the nano-optical lens array.

20. A lens assembly that forms an optical image of the subject, An image sensor that converts the optical image formed by the lens assembly into an electrical signal, The system includes a processor that processes signals generated by the image sensor, The aforementioned image sensor is A sensor substrate including a first pixel group containing multiple consecutively arranged first pixels, a second pixel group containing multiple consecutively arranged second pixels, a third pixel group containing multiple consecutively arranged third pixels, and a fourth pixel group containing multiple consecutively arranged fourth pixels, An electronic device comprising a nanooptical lens array including a first pixel-corresponding region facing the first pixel group, a second pixel-corresponding region facing the second pixel group, a third pixel-corresponding region facing the third pixel group, and a fourth pixel-corresponding region facing the fourth pixel group, wherein each of the first to fourth pixel-corresponding regions includes one or more nanoposts, and separates incident light by wavelength, multifocusing green light on the plurality of first pixels and the plurality of fourth pixels, single-focusing blue light on the second pixel group, and single-focusing red light on the third pixel group.