Packaging substrate and semiconductor package including the same

Abstract

To provide a packaging substrate with stable long-term durability and electrical reliability. [Solution] The packaging substrate 100 includes a core layer 10 and an insulating layer 20 disposed on the core layer. The insulating layer includes an insulating resin. The insulating layer includes a first insulating layer 21 and a second insulating layer 22 disposed on the first insulating layer. The peak intensity of the hydroxyl group measured by FT-IR of the second insulating layer is smaller than the peak intensity of the hydroxyl group measured by FT-IR of the first insulating layer. The moisture absorption of the packaging substrate measured after being left for 7 days at 23°C and in a 50RH atmosphere is 500ppm to 1200ppm.

Description

[Technical Field]

[0001] The concrete examples relate to packaging substrates and semiconductor packages containing them. [Background technology]

[0002] In the manufacturing of electronic components, the process of creating circuits on semiconductor wafers is called the front-end process (FE), and the process of assembling the wafers into a state where they can be used in actual products is called the back-end process (BE), and the packaging process is included in this back-end process.

[0003] The four core technologies of the semiconductor industry that have enabled the rapid development of recent electronic products are semiconductor technology, semiconductor packaging technology, manufacturing process technology, and software technology. Semiconductor technology has evolved into various forms such as line widths in the nanoscale (below the micron), cells exceeding 10 million, high-speed operation, and significant heat dissipation, but relatively speaking, the technology to perfectly package these is not yet supported. Therefore, the electrical performance of a semiconductor is sometimes determined more by the packaging technology and the resulting electrical connections than by the performance of the semiconductor technology itself.

[0004] Ceramics or resins are used as materials for packaging substrates. In the case of ceramic substrates, it is not easy to mount high-performance high-frequency semiconductor elements due to their high resistance or dielectric constant. In the case of resin substrates, it is relatively possible to mount high-performance high-frequency semiconductor elements, but there are limitations to the reduction of the wiring pitch.

[0005] Recently, research has been progressing on applying silicon and glass to high-end packaging substrates. By forming through-holes in silicon or glass substrates and applying conductive materials to these holes, the wiring length between the device and the motherboard can be shortened, resulting in superior electrical characteristics. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Korean Registered Patent No. 10-1396700 [Overview of the project] [Problems that the invention aims to solve]

[0007] The objective of this embodiment is to provide a packaging substrate with stable long-term durability and electrical reliability. [Means for solving the problem]

[0008] A packaging substrate according to one embodiment of this specification includes a core layer and an insulating layer disposed on the core layer.

[0009] The insulating layer includes an insulating resin.

[0010] The insulating layer includes a first insulating layer and a second insulating layer disposed on the first insulating layer.

[0011] The peak intensity of the hydroxyl group measured by FT-IR in the second insulating layer is smaller than the peak intensity of the hydroxyl group measured by FT-IR in the first insulating layer.

[0012] The moisture absorption of the packaging substrate, measured after being left in an atmosphere of 23°C and 50RH for 7 days, was 500ppm to 1200ppm.

[0013] The Rhd value, which is the rate of reduction of hydroxyl groups in the packaging substrate according to the following formula 1, may be between 30% and 80%.

[0014] [Formula 1] JPEG2026079767000002.jpg1046

[0015] In the above formula 1, H1 is the peak intensity of the hydroxyl group measured by FT-IR in the first insulating layer, and H2 is the peak intensity of the hydroxyl group measured by FT-IR in the second insulating layer.

[0016] The elastic modulus of the insulating layer measured at 23°C can be 4 GPa to 8 GPa.

[0017] The insulating layer can be disposed in contact with at least a part of the upper surface of the core layer.

[0018] The peeling strength of the insulating layer with respect to the upper surface of the core layer measured by a 90° peeling test (peeling test) can be 25 N / cm 2 or more.

[0019] The shear strength of the insulating layer with respect to the upper surface of the core layer can be 40 N / cm 2 or more.

[0020] The insulating resin can include an epoxy resin.

[0021] The core layer may be a glass core or a ceramic core.

[0022] The semiconductor package according to another embodiment of this specification includes the packaging substrate and an element electrically connected to the packaging substrate.

Advantages of the Invention

[0023] The packaging substrate of the embodiment can have stable long-term durability and electrical reliability.

Brief Description of the Drawings

[0024] [Figure 1] It is a cross-sectional view for explaining a packaging substrate according to an embodiment of the embodiment. [Figure 2] It is a cross-sectional view for explaining a packaging substrate according to another embodiment of the embodiment.

Best Mode for Carrying Out the Invention

[0025] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings so that they can be easily implemented by a person with ordinary skill in the art to which the present invention pertains. However, the present invention can be realized in a variety of different forms and is not limited to the embodiments described herein. Similar parts are denoted by the same reference numerals throughout the specification.

[0026] Throughout this specification, the term “these combinations” as used in any expression in Markush form means one or more mixtures or combinations selected from the group of components described in the Markush form, and includes one or more of those components.

[0027] Throughout this specification, terms such as “First,” “Second,” or “A,” “B” are used to distinguish identical terms from one another. Furthermore, singular expressions include plural expressions unless the context clearly indicates otherwise.

[0028] In this specification, "~system" may mean that the compound contains a compound corresponding to "~" or a compound derived from "~".

[0029] In this specification, the meaning of B being located on A means either B being in direct contact with A, or B being located on A with other layers located between them, and is not limited to B being in contact with the surface of A.

[0030] In this specification, the meaning of B being connected to A means either that A and B are directly connected, or that A and B are connected through other components between them, and is not limited to the direct connection of A and B unless otherwise specified.

[0031] In this specification, unless otherwise specified, singular expressions are interpreted to include singular or plural, as interpreted in the context.

[0032] In this specification, the form, relative size, angles, etc., of each component in the drawings are illustrative and may be exaggerated for illustrative purposes, and the rights shall not be construed as being limited to the drawings.

[0033] In this specification, "adjacent to A and B" means that A and B are located touching each other, or that A and B are not touching but are located close to each other. In this specification, the expression "adjacent to A and B" is not construed to mean that A and B are located touching each other unless otherwise specified.

[0034] In this specification, unless otherwise specified, a fine line means a line with a width of 5 μm or less, and more specifically, a line with a width of 1 to 4 μm or less.

[0035] In this specification, unless otherwise specified, the physical properties of each component within the packaging substrate are assumed to have been measured at room temperature. Room temperature is defined as 20°C to 25°C.

[0036] In this specification, the peak intensity measured by FT-IR (Fourier-transform infrared spectroscopy) is defined as the peak height relative to the absorbance.

[0037] Packaging substrate Figure 1 is a cross-sectional view illustrating a packaging substrate according to one embodiment of the actual example. The actual example will be described below with reference to Figure 1.

[0038] The following provides a detailed explanation of specific examples.

[0039] A packaging substrate 100 according to one embodiment of the concrete example includes a core layer 10 and an insulating layer 20 disposed on the core layer 10.

[0040] The core layer 10 has the shape of a substrate and can function as a support layer within the packaging substrate 100. The core layer 10 may be a glass core or a ceramic core. In this case, it can exhibit lower water absorption compared to a packaging substrate to which an organic substrate is applied.

[0041] The core layer 10 may be a glass core. The glass core may, for example, be alkali borosilicate plate glass, alkali-free borosilicate plate glass, alkali-free alkaline earth borosilicate plate glass, or any plate glass used for electronic components. The glass core may be a glass substrate for electronic devices, and for example, those manufactured by Schott, AGC, Corning, etc., may be used, but are not limited to these.

[0042] The core layer 10 may include through vias (not shown) that penetrate in the thickness direction of the core layer 10.

[0043] A through via consists of an internal space (not shown) and an inner diameter surface of the via (not shown) surrounding the internal space. The internal space refers to an empty space, and the inner diameter surface of the via refers to the surface of the core layer 10 formed on the inside of the through via.

[0044] The through vias may have a diameter that varies in the thickness direction of the core layer 10. The through vias may have a substantially uniform diameter in the thickness direction of the core layer 10.

[0045] The surface of the core layer 10 may include an upper surface and a side surface connected to the upper surface and formed in the thickness direction of the core layer 10. The surface of the core layer 10 may also include a lower surface facing the upper surface.

[0046] The statement that the side surface is formed in the thickness direction of the core layer 10 is interpreted to mean not only that the side surface is perpendicular to the upper surface of the core layer 10, but also that at least a portion of the side surface forms an angle (angle of inclination) other than 90° with the upper surface.

[0047] The aforementioned side surface may be flat or curved.

[0048] The core layer 10 may include a cavity (not shown), which is a space formed by a recess inside.

[0049] The cavity may be formed by a recess in a portion of the upper / lower side of the core layer 10 in the thickness direction of the core layer 10, or it may penetrate through the core layer 10 in the thickness direction.

[0050] The element is mounted in the cavity, and the packaging substrate 100 and the element can be electrically connected. The element may be not only a semiconductor element such as a CPU, GPU, or memory chip, but also a capacitor element, a transistor element, an impedance element, or other modules. In other words, any semiconductor element that can be mounted on a semiconductor device can be used as the element without limitation.

[0051] The thickness of the core layer 10 may be 100 μm to 1,000 μm. The thickness may be 200 μm or more. The thickness may be 300 μm or more. The thickness may be 900 μm or less. The thickness may be 800 μm or less. The thickness may be 700 μm or less. When such a core layer 10 is applied to the packaging substrate 100 together with the insulating layer 20 described in detail below, the packaging substrate 100 can have stable durability and an even thinner thickness.

[0052] The packaging substrate 100 may include an insulating layer 20 disposed on the core layer 10. The insulating layer 20 may be disposed in contact with at least a portion of the upper surface of the core layer 10.

[0053] The insulating layer 20 may include an insulating resin. The insulating resin can impart insulating properties to the insulating layer 20.

[0054] The insulating layer 20 may include a first insulating layer 21 and a second insulating layer 22 disposed on the first insulating layer 21. The second insulating layer 22 may be disposed in contact with the upper surface of the first insulating layer 21. Other components may be disposed between the first insulating layer 21 and the second insulating layer 22, so that the second insulating layer 22 is disposed at a distance from the first insulating layer 21.

[0055] When the second insulating layer 22 is placed in contact with the upper surface of the first insulating layer 21, when the packaging substrate 100 is observed in cross-section in the thickness direction, the interface between the first insulating layer 21 and the second insulating layer 22 may or may not be visible through a microscope or the like.

[0056] When the second insulating layer 22 is placed in contact with the upper surface of the first insulating layer 21, and no interface is observed between the first insulating layer 21 and the second insulating layer 22, the first insulating layer 21 and the second insulating layer 22 are distinguished based on the peak intensity of hydroxyl groups measured by FT-IR.

[0057] The peak intensity of the hydroxyl group measured by FT-IR on the second insulating layer 22 is smaller than the peak intensity of the hydroxyl group measured by FT-IR on the first insulating layer 21.

[0058] The hydroxyl group peak measured by FT-IR is at wavenumber 3400 cm⁻¹. -1 ~3650cm -1 This can be observed.

[0059] In practice, the ratio of hydroxyl group content in the first insulating layer 21 and the second insulating layer 22 can be controlled. Specifically, by ensuring that the second insulating layer 22, whose upper surface is exposed during manufacturing or transport processes, has a relatively lower hydroxyl group content compared to the first insulating layer 21, the decrease in the durability of the insulating layer 20 due to moisture absorption can be effectively suppressed.

[0060] The peak intensities of hydroxyl groups in the first insulating layer 21 and the second insulating layer 22 are measured by FT-IR using an FT-IR spectrophotometer with an ATR device. For example, a PerkinElmer spotlight 400 model FT-IR spectrophotometer can be used.

[0061] The Rhd value, which is the rate of reduction of hydroxyl groups in the following formula 1 of the packaging substrate 100, may be between 30% and 80%.

[0062] [Formula 1] JPEG2026079767000003.jpg1046

[0063] In the above formula 1, H1 is the peak intensity of the hydroxyl group measured by FT-IR of the first insulating layer 21, and H2 is the peak intensity of the hydroxyl group measured by FT-IR of the second insulating layer 22.

[0064] The peak intensity of the hydroxyl group is the height of the peak relative to the absorbance.

[0065] In practice, by ensuring that the packaging substrate 100 has a controlled Rhd value, the insulating layer 20 can have excellent moisture resistance while suppressing excessive brittleness of the insulating layer 20, thereby suppressing the occurrence of cracks within the insulating layer 20.

[0066] The Rhd value of the packaging substrate 100 may be 30% to 80%. The Rhd value may be 40% or more. The Rhd value may be 50% or more. The Rhd value may be 55% or more. The Rhd value may be 75% or less. In such cases, both the moisture resistance and flexibility of the insulating layer 20 can be improved.

[0067] The amount of moisture absorbed by the packaging substrate 100 after being left in an atmosphere of 23°C and 50RH for 7 days may be between 100 ppm and 1000 ppm.

[0068] If the insulating layer 20 is excessively exposed to moisture, phenomena such as hydrolysis of the insulating resin due to moisture and a decrease in the bonding strength between the core layer 10 and the insulating layer 20 may occur, which can be a major cause of reduced long-term durability and electrical reliability of the packaging substrate 100. In practice, the deterioration of the insulating layer 20 due to moisture can be suppressed by controlling the amount of moisture absorbed by the packaging substrate 100 to below a certain level.

[0069] The amount of moisture absorbed by the packaging substrate 100 is measured by the following method.

[0070] The packaging substrate 100 is left at 23°C and in a 50RH atmosphere for 7 days, and the packaging substrate 100 is cut in the thickness direction to prepare a sample with a mass of 5g.

[0071] Next, Karl Fischer reagent is added to the Karl Fischer moisture meter, nitrogen gas is supplied at a flow rate of 200 ml / min, and the internal temperature of the Karl Fischer moisture meter is set to 120°C. Without adding a sample to the Karl Fischer moisture meter, the mass of moisture is measured under the conditions of 10 minutes of back purging, 10 minutes of cell purging, and 20 minutes of measurement. Then, the sample is added to the Karl Fischer moisture meter, and the mass of moisture is measured under the conditions of 10 minutes of back purging, 10 minutes of cell purging, and 20 minutes of measurement. The amount of moisture absorbed by the packaging substrate 100 is calculated by subtracting the mass of moisture measured before adding the sample from the mass of moisture measured when the sample was added.

[0072] For example, the Karl Fischer moisture meter, specifically the KEM MKS-710S model, can be used.

[0073] The moisture absorption of the packaging substrate 100, measured after being left in an atmosphere of 23°C and 50RH for 7 days, may be between 500ppm and 1200ppm. The moisture absorption may be 550ppm or more. The moisture absorption may be 600ppm or more. The moisture absorption may be 1150ppm or less. The moisture absorption may be 1100ppm or less. In such cases, the degree to which the insulating layer 20 is damaged by hydrolysis is reduced, and appropriate flexibility can be imparted to the insulating layer 20.

[0074] The elastic modulus of the insulating layer 20 measured at 23°C may be 8 GPa or less. The elastic modulus may be 7.5 GPa or less. The elastic modulus may be 7 GPa or less. The elastic modulus may be 4 GPa or more. In such cases, the occurrence of cracks within the insulating layer 20 after curing can be effectively suppressed.

[0075] The elastic modulus of the insulating layer 20 is measured using a Universal Testing Machine (UTM) at 23°C in pull mode. During measurement, the tensile speed is 1 mm / min, and the measurement is performed under average conditions of N=5.

[0076] In practice, by applying the aforementioned insulating layer 20, whose moisture absorption amount is controlled, to the packaging substrate 100, a stable bonding force can be formed between the insulating layer 20 and the core layer 10 within the packaging substrate 100, thereby improving the long-term durability of the packaging substrate 100.

[0077] The insulating layer 20 may be positioned in contact with at least a portion of the upper surface of the core layer 10. The peel strength of the insulating layer 20 from the upper surface of the core layer 10, as measured by a 90° peeling test, is 25 N / cm². 2 The above peel strength may also be 27 N / cm 2 The above is also acceptable. 2 The above is also acceptable. 2 The above peel strength may also be 34 N / cm2 It may be as above. The peeling strength may be 50 N / cm 2 or less.

[0078] The shear strength of the insulating layer 20 with respect to the upper surface of the core layer 10 may be 40 N / cm 2 or more. The shear strength may be 45 N / cm 2 or more. The shear strength may be 50 N / cm 2 or more. The shear strength may be 55 N / cm 2 or more. The shear strength may be 80 N / cm 2 or less.

[0079] In such a case, the peeling phenomenon of the insulating layer 20 due to the long-term use of the packaging substrate 100 can be substantially suppressed.

[0080] The peeling strength can be measured by a Universal Testing Machine (UTM) and a 500 N load cell in a region of 1 cm in width and 1 cm in length within the substrate 100. When peeling the insulating layer 20, the insulating layer 20 is peeled from the upper surface of the glass core at an angle of 90°, and the peeling speed is set to 10 mm / min. When measuring the peeling strength, the ambient temperature is set to 23 °C and the ambient humidity is set to 50 RH%.

[0081] The shear strength can be measured by a Universal Testing Machine (UTM) and a 1 kN load cell in a region of 1 cm in width and 1 cm in length within the substrate 100. A load is applied to the insulating layer 20 in the in-plane direction of the substrate 100 at a speed of 5 mm / min in the above region, and the maximum load until the insulating layer 20 is separated is measured, and the measured value is taken as the shear strength. When measuring the peeling strength, the ambient temperature is set to 23 °C and the ambient humidity is set to 50 RH%.

[0082] When measuring the peeling strength and the shear strength, the region where the insulating layer 20 contacts the upper surface of the core layer 10 is set as the measurement target.

[0083] For example, a universal testing machine such as the Instron 5969 UTM can be used.

[0084] The insulating layer 20 may contain an insulating resin. The insulating resin may contain an epoxy resin. The insulating resin may contain a cured epoxy resin.

[0085] The insulating resin may contain 70% by weight or more of epoxy resin. The insulating resin may contain 80% by weight or more of epoxy resin. The insulating resin may contain 90% by weight or more of epoxy resin. The insulating resin may contain 100% by weight or less of epoxy resin.

[0086] The epoxy resin may contain a first residue derived from a bisphenol-type epoxy resin and / or a second residue derived from a novolac-type epoxy resin.

[0087] The bisphenol-type epoxy resin may contain at least one of bisphenol A-type epoxy resins and bisphenol F-type epoxy resins. The bisphenol-type epoxy resin may also be a bisphenol A-type epoxy resin.

[0088] The novolac-type epoxy resin may include at least one of the following: a phenol novolac-type epoxy resin and a cresol novolac-type epoxy resin.

[0089] The epoxy resin may contain 50% by weight or more of the first residue. The epoxy resin may contain 60% by weight or more of the first residue. The epoxy resin may contain 90% by weight or less of the first residue. In such cases, excellent mechanical strength can be imparted to the insulating layer 20.

[0090] The epoxy resin may contain 5% by weight or more of the second residue. The epoxy resin may contain 10% by weight or more of the second residue. The epoxy resin may contain 15% by weight or more of the second residue. The epoxy resin may contain 40% by weight or less of the second residue. The epoxy resin may contain 35% by weight or less of the second residue. The epoxy resin may contain 30% by weight or less of the second residue.

[0091] The insulating layer 20 may contain 50% by weight or more of epoxy resin. The insulating layer 20 may contain 55% by weight or more of epoxy resin. The insulating layer 20 may contain 60% by weight or more of epoxy resin. The insulating layer 20 may contain 65% by weight or more of epoxy resin. The insulating layer 20 may contain 100% by weight or less of epoxy resin. The insulating layer 20 may contain 95% by weight or less of epoxy resin. The insulating layer 20 may contain 90% by weight or less of epoxy resin. In such cases, excessive thermal expansion of the insulating layer 20 during the manufacturing process of the packaging substrate 100 can be suppressed, and stable insulating properties can be provided to the region where the electrical conductive layer is located.

[0092] The insulating layer 20 may contain fillers. Fillers can help the insulating layer 20 have controlled thermal expansion properties.

[0093] The filler is not limited as long as it is commonly used in the field of packaging substrates. For example, the filler may be any one selected from the group consisting of silica, barium sulfate, magnesium carbonate, calcium carbonate, aluminum oxide, aluminum hydroxide, aluminum nitride, titanium oxide, and combinations thereof.

[0094] The insulating layer 20 may contain 12% by weight or more of filler. The insulating layer 20 may contain 15% by weight or more of filler. The insulating layer 20 may contain 30% by weight or less of filler.

[0095] The insulating layer 20 may further contain other additives besides those described above. The additives are not limited to those commonly used in the field of packaging substrates. Examples of additives include curing agents, colorants, and defoamers.

[0096] Figure 2 is a cross-sectional view illustrating a packaging substrate according to another embodiment of the concrete example. The concrete example will be described below with reference to Figure 2.

[0097] The packaging substrate 100 includes a core layer 10 and an insulating layer 20 disposed on the core layer 10. The components of the packaging substrate 100 are the same as those described in Figure 1 above. The differences will be explained below.

[0098] The packaging substrate 100 may include a first redistribution layer 40 disposed on the core layer 10. The first redistribution layer 40 may include an electrical conductive layer 30 and an insulating layer 20 surrounding at least a portion of the electrical conductive layer 30.

[0099] The electrical conductive layer 30 is a conductor that transmits electrical signals. The electrical conductive layer 30 may contain an electrical conductive material. For example, the electrical conductive layer 30 may contain at least one of copper, nickel, aluminum, gold, and silver. Copper or the like may be used as the material for the electrical conductive layer 30.

[0100] The description of the physical properties and composition of the insulating layer 20 will be omitted as it will be redundant with the above.

[0101] The first redistribution layer 40 may be placed in contact with the upper surface of the core layer 10. Other components may be placed between the first redistribution layer 40 and the upper surface of the core layer 10.

[0102] In the first redistribution layer 40, the insulating layer 20 and the electrically conductive layer 30 may be arranged in a mixed manner. The first redistribution layer 40 may be formed in a manner in which the electrically conductive layer 30, having a predetermined position and shape, is embedded within the insulating layer 20. The electrically conductive layer 30 may be formed as fine wires in at least a portion of the first redistribution layer 40. The first redistribution layer 40 may be electrically connected to terminals and elements located on the upper part of the packaging substrate 100.

[0103] The electrical conductive layer 30 may include a first electrical conductive layer 31 that is positioned in contact with the upper surface of the core layer 10. The insulating layer 20 may surround a portion of the first electrical conductive layer 31. The insulating layer 20 may surround at least a portion of the upper surface of the first electrical conductive layer 31. The insulating layer 20 may surround at least a portion of the side surface of the first electrical conductive layer 31.

[0104] The electrical conductive layer 30 may include a second electrical conductive layer 32 that is placed on the core layer 10 without contacting the upper surface of the core layer 10. The insulating layer 20 may surround at least a portion of the second electrical conductive layer 32. The insulating layer 20 may surround the entire second electrical conductive layer 32.

[0105] The peel strength of the electrical conductive layer 30 on the upper surface of the insulating layer 20 may be 3 N / cm or more. The peel strength may be 3.5 N / cm or more. The peel strength may be 4 N / cm or more. The peel strength may be 10 N / cm or less. In such cases, the insulating layer 20 can stably support, protect, and insulate the electrical conductive layer 30.

[0106] The peel strength of the electrical conductive layer 30 from the insulating layer 20 is measured using a bond tester by a 180° peel test. The measurement speed (peel speed) is set to 10 mm / s, the measurement distance (peel distance) to 70 mm, and the measurement area is set to the area on the upper / lower surface of the core layer 10 where no through vias are formed. Exemplarily, the value of the peel strength can be measured using a Condor Sigma bond tester from XYZ TEC. The packaging substrate 100 may further include a second redistribution layer (not shown) located beneath the core layer 10.

[0107] The second redistribution layer may include an electrical conductive layer and an insulating layer surrounding at least a portion of the electrical conductive layer. The explanation of the electrical conductive layer and the insulating layer will be omitted as it will overlap with the above.

[0108] In the second redistribution layer, insulating layers and electrically conductive layers may be arranged in a mixed manner. The second redistribution layer may be formed in a manner in which electrically conductive layers having predetermined positions and shapes are embedded within insulating layers. The second redistribution layer may be electrically connected to terminals and the main board located at the bottom of the packaging substrate 100.

[0109] The ratio of the thickness of the first redistribution layer 40 to the thickness of the core layer 10 may be 0.2 to 1.5. The ratio may be 0.3 or more. The ratio may be 0.4 or more. The ratio may be 1.2 or less. The ratio may be 1 or less. The ratio of the sum of the thickness of the first redistribution layer and the thickness of the second redistribution layer to the thickness of the core layer 10 may be 0.4 to 3. The ratio may be 0.6 or more. The ratio may be 0.8 or more. The ratio may be 2.4 or less. The ratio may be 2 or less. In such cases, controlling the surface area of ​​the insulating layer exposed to the outside can contribute to suppressing moisture absorption of the packaging substrate.

[0110] The packaging substrate 100 may further include bumps (not shown) located beneath the second redistribution layer.

[0111] The bumps may be positioned below the core layer 10 in a predetermined configuration. For example, the bumps may be positioned on a portion of the underside of the packaging substrate 100 so as to be in contact with the main board or the like.

[0112] Semiconductor packages A semiconductor package according to yet another embodiment of the embodiment includes a packaging substrate and an element electrically connected to the packaging substrate.

[0113] The packaging board can be mounted on the main board and electrically connected to it.

[0114] The explanation of the packaging substrate and components will be omitted as it will overlap with the content described above.

[0115] Manufacturing method for packaging substrates A method for manufacturing a packaging substrate according to yet another embodiment of the embodiment includes a preparation step of preparing a substrate before oxidation treatment, which includes a core layer and a first insulating layer disposed on the core layer, and an oxidation treatment step of oxidizing the upper side of the first insulating layer to form a second insulating layer.

[0116] In the preparation step, a substrate with a first insulating layer already formed on the core layer before oxidation treatment may be introduced, or a substrate with a first insulating layer formed on the core layer before oxidation treatment may be prepared.

[0117] The core layer may be the one described above. The explanation of the core layer will be omitted as it will overlap with the previously mentioned content.

[0118] If necessary, a core layer with an electrically conductive layer formed on its upper surface can be provided.

[0119] The first insulating layer can be provided by laminating an insulating layer-forming film onto the core layer and then curing it, or by applying an insulating layer-forming composition onto the core layer and then curing it.

[0120] The insulating layer-forming composition (or film) may contain an epoxy resin and a curing agent before curing. The insulating layer-forming composition (or film) may further contain a filler.

[0121] The epoxy resin may include a bisphenol-type epoxy resin and / or a novolac-type epoxy resin. The bisphenol-type epoxy resin may include at least one of bisphenol A-type epoxy resin and bisphenol F-type epoxy resin. The bisphenol-type epoxy resin may also be a bisphenol A-type epoxy resin. The novolac-type epoxy resin may include at least one of phenol novolac-type epoxy resin and cresol novolac-type epoxy resin.

[0122] The epoxy resin may contain 50% by weight or more of bisphenol-type epoxy resin. The epoxy resin may contain 60% by weight or more of bisphenol-type epoxy resin. The epoxy resin may contain 90% by weight or less of bisphenol-type epoxy resin.

[0123] The epoxy resin may contain 5% by weight or more of novolac-type epoxy resin. The epoxy resin may contain 10% by weight or more of novolac-type epoxy resin. The epoxy resin may contain 15% by weight or more of novolac-type epoxy resin. The epoxy resin may contain 40% by weight or less of novolac-type epoxy resin. The epoxy resin may contain 35% by weight or less of novolac-type epoxy resin. The epoxy resin may contain 30% by weight or less of novolac-type epoxy resin.

[0124] The insulating layer-forming composition (or film) may contain 50% by weight or more of epoxy resin. The insulating layer-forming composition (or film) may contain 55% by weight or more of epoxy resin. The insulating layer-forming composition (or film) may contain 60% by weight or more of epoxy resin. The insulating layer-forming composition (or film) may contain 65% by weight or less of epoxy resin. The insulating layer-forming composition (or film) may contain 100% by weight or less of epoxy resin. The insulating layer-forming composition (or film) may contain 95% by weight or less of epoxy resin. The insulating layer-forming composition (or film) may contain 90% by weight or less of epoxy resin.

[0125] The insulating layer-forming composition (or film) may further contain a curing agent. The curing agent can crosslink with the epoxy resin to form a cured epoxy resin. The curing agent is not limited as long as it is generally applicable to epoxy resins.

[0126] The insulating layer-forming composition (or film) may further contain a filler. The fillers described above can be used as the filler. A description of the fillers is omitted as it overlaps with the above.

[0127] The insulating layer-forming composition (or film) may contain 12% by weight or more of filler. The insulating layer-forming composition (or film) may contain 15% by weight or more of filler. The insulating layer-forming composition (or film) may contain 30% by weight or less of filler.

[0128] The insulating layer-forming composition (or film) may further contain additives commonly used in the field of build-up films. Examples of additives include curing agents, colorants, and defoamers.

[0129] Immediately after forming an insulating layer composition (or film) on a core layer, the composition (or film) can be preheat-treated to partially cure it. The preheat-treatment temperature may be 40°C or higher. The preheat-treatment temperature may be 50°C or higher. The preheat-treatment temperature may be 100°C or lower. The preheat-treatment temperature may be 90°C or lower. The preheat-treatment time may be 1 minute or longer. The preheat-treatment time may be 3 minutes or longer. The preheat-treatment time may be 5 minutes or longer. The preheat-treatment time may be 30 minutes or less. The preheat-treatment time may be 20 minutes or less.

[0130] A first insulating layer can be formed by curing an insulating layer-forming composition (or film) formed on a core layer. The insulating layer-forming composition (or film) may be placed in contact with at least a portion of the upper surface of the core layer. The insulating layer-forming composition (or film) may be placed in contact with at least a portion of the upper surface of an electrically conductive layer placed on the core layer.

[0131] Curing can be carried out in two or more processes, including a primary curing process and a secondary curing process.

[0132] During the primary curing process, the insulating layer-forming composition (or film) formed on the upper surface of the core layer can be heat-treated.

[0133] The heat treatment temperature in the primary curing process may be 40°C or higher. The heat treatment temperature may be 50°C or higher. The heat treatment temperature may be 100°C or lower. The heat treatment temperature may be 90°C or lower.

[0134] The heat treatment time for the primary curing process may be 30 minutes or more. The heat treatment time may be 40 minutes or more. The heat treatment time may be 3 hours or less. The heat treatment time may be 2 hours or less.

[0135] In the secondary curing process, the insulating layer-forming composition (or film) that has completed the primary curing process can be heat-treated to form a preliminary insulating layer.

[0136] The heat treatment temperature in the secondary curing process may be 100°C or higher. The heat treatment temperature may be 120°C or higher. The heat treatment temperature may be 250°C or lower. The heat treatment temperature may be 200°C or lower.

[0137] The heat treatment time for the secondary curing process may be 45 minutes or more. The heat treatment time may be 1 hour or more. The heat treatment time may be 5 hours or less. The heat treatment time may be 3 hours or less.

[0138] In the oxidation treatment step, the upper side of the first insulating layer can be oxidized to form a second insulating layer. Specifically, the upper surface of the first insulating layer can be irradiated with light having a controlled wavelength. In such a case, a photo-oxidation reaction proceeds on the upper surface of the first insulating layer, and a second insulating layer having a controlled hydroxyl group content can be formed on the first insulating layer. The remaining portion of the insulating layer, excluding the portion where the second insulating layer has been formed, can still constitute the first insulating layer.

[0139] In the oxidation treatment step, the irradiation light can be irradiated with light of a wavelength of 200 nm to 300 nm. The wavelength may also be 230 nm to 270 nm.

[0140] In the oxidation treatment step, the luminous intensity of the light irradiated onto the upper surface of the pre-insulating layer is 30 mW / cm². 2 The above may also be true. 2 The above may also be true. 2 The above may also be true. The luminous intensity is 200 mW / cm². 2 The following may also apply: The luminous intensity is 150 mW / cm². 2 The following is also acceptable.

[0141] In the oxidation treatment step, the light irradiation time may be 10 to 40 minutes. The light irradiation time may be 15 minutes or more. The light irradiation time may be 35 minutes or less.

[0142] In such cases, it is possible to reduce the distribution of hydroxyl groups within the insulating layer while suppressing excessive hardening of the second insulating layer.

[0143] If necessary, after forming an electrically conductive layer on the formed insulating layer, another insulating layer can be formed on the electrically conductive layer so as to surround the electrically conductive layer, thereby forming a first redistribution layer.

[0144] The aforementioned electrical conductive layer and the first redistribution layer can be the same as those described above. The explanation of the electrical conductive layer and the first redistribution layer will be omitted as it will be redundant with the above.

[0145] The electrical conductive layer may be formed using a dry or wet method.

[0146] The dry method involves sputtering in the region where the electrical conductive layer will be placed to form a seed layer, and then plating the region where the seed layer has been formed to form the electrical conductive layer. When forming the seed layer, metals such as titanium, chromium, and nickel may be sputtered, or the aforementioned metals and copper may be applied together during sputtering. Through sputtering, an anchoring effect occurs in which the surface of the core layer, crack prevention layer, or insulating layer interacts with the metal particles, thereby improving the adhesion of the electrical conductive layer.

[0147] The wet method involves applying a primer to the area where an electrical conductive layer needs to be formed, followed by metal plating. The primer may contain compounds with functional groups such as amines. Depending on the desired degree of adhesion, the primer may contain both a compound with functional groups such as amines and a silane coupling agent. When using a silane coupling agent, the surface to be primed can be pre-treated with the silane coupling agent, and then a compound with amine groups can be applied to the pre-treated area to form the primer layer.

[0148] After forming a seed layer or primer layer, a metal can be plated to form an electrically conductive layer. Copper plating may be applied during the formation of the electrically conductive layer, but is not limited to this. Before metal plating, parts of the seed layer or primer layer where the formation of the electrically conductive layer is unnecessary can be deactivated, or parts where the formation of the electrically conductive layer is necessary can be activated before plating. The activation or deactivation treatment method may include light irradiation treatment using a laser of a specific wavelength, chemical treatment, etc. However, after metal plating without applying activation or deactivation treatment, the electrically conductive layer can be etched and patterned according to a pre-designed shape.

[0149] After the formation of the electrical conductive layer, an insulating layer can be formed surrounding the electrical conductive layer. The insulating layer formed on the electrical conductive layer can be formed by the same method as described above.

[0150] If necessary, a second redistribution layer can be formed beneath the core layer using the same method applied to the formation of the first redistribution layer.

[0151] The manufacturing method for the packaging substrate in the embodiment may further include the steps of forming connection terminals, bumps, cover layers, etc., on the upper and / or lower surfaces of the packaging substrate, or the steps of mounting elements on the substrate.

[0152] The following examples will provide a more detailed explanation of the implementation through specific embodiments. These embodiments are merely illustrative to aid in understanding the implementation, and the scope of implementation is not limited to them.

[0153] Manufacturing example: Manufacturing of packaging substrates Example 1: 80 g of bisphenol A type epoxy resin, 20 g of novolac type epoxy resin, and 30 g of polyamine curing agent were mixed under vacuum using a stirrer at a speed of 200 rpm for 30 minutes. 30 g of filler (12 g of silica, 8 g of alumina, and 10 g of organic silicone filler) was added to the mixed composition and mixed further at a speed of 150 rpm for 10 minutes. The composition with the filler was degassed for 20 minutes to obtain an insulating layer forming composition.

[0154] An insulating layer-forming composition was applied to the upper surface of a glass core measuring 100 mm horizontally and 100 mm vertically to a thickness of 5 μm. The applied composition was then heat-treated at 60°C for 10 minutes to form an insulating layer-forming composition layer.

[0155] Using the same method as described above, six insulating layer composition layers were formed on the core layer and three layers below the core layer.

[0156] Subsequently, the substrate, with insulating layer-forming composition layers formed above and below the core layer, was placed in a heat treatment chamber and heat-treated at 60°C for 1 hour, followed by further heat treatment at 150°C for 2 hours to form a preliminary insulating layer. After the heat treatment was completed, the ambient temperature was lowered to 25°C by applying a cooling rate of 0.5°C / min to complete the packaging substrate.

[0157] The upper surface of the preliminary insulating layer was irradiated with light of a wavelength of 254 nm for 10 minutes to form an insulating layer including the first and second insulating layers, thereby completing the packaging substrate. During light irradiation, the luminous intensity of the light irradiated onto the upper surface of the preliminary insulating layer was 100 mW / cm². 2 It was applied as follows.

[0158] Example 2: A packaging substrate was manufactured in the same manner as in Example 1, except that the light irradiation time was set to 20 minutes.

[0159] Example 3: A packaging substrate was manufactured in the same manner as in Example 1, except that the light irradiation time was set to 30 minutes.

[0160] Comparative Example 1: A packaging substrate was manufactured in the same manner as in Example 1, except that the preliminary insulating layer was not irradiated with light.

[0161] Comparative Example 2: A packaging substrate was manufactured in the same manner as in Example 1, except that the light irradiation time was set to 5 minutes.

[0162] Comparative Example 3: A packaging substrate was manufactured in the same manner as in Example 1, except that the light irradiation time was set to 45 minutes.

[0163] Comparative Example 4: A packaging substrate was manufactured in the same manner as in Example 1, except that the light irradiation time was set to 60 minutes.

[0164] Comparative Example 5: A packaging substrate was manufactured in the same manner as in Example 1, except that the light irradiation time was set to 120 minutes.

[0165] Evaluation example: Measurement of Rhd value In the process of manufacturing the packaging substrates for each example and comparative example, the peak intensity of the hydroxyl group was measured from the upper surface of the first insulating layer using a PerkinElmer Spotlight 400 FT-IR spectrophotometer before light irradiation, and this value was defined as H1.

[0166] Subsequently, the first insulating layer was irradiated with light to complete the second insulating layer, and the peak intensity of the hydroxyl group was measured from the upper surface of the second insulating layer using a spectrophotometer, and this value was defined as H2.

[0167] The Rhd value was calculated from the measured H1 and H2 values.

[0168] The measured values ​​and calculated values ​​for each example and comparative example are shown in Table 1 below.

[0169] Evaluation example: Measurement of water absorption The packaging substrates for each example and comparative example were left at 23°C and in a 50RH atmosphere for 7 days. The packaging substrates were then cut in the thickness direction to prepare samples with a total mass of 5g.

[0170] Subsequently, Karl Fischer reagent was added to a KEM MKS-710S Karl Fischer moisture analyzer, and nitrogen gas was supplied at a flow rate of 200 ml / min, setting the internal temperature of the Karl Fischer moisture analyzer to 120°C. Without adding a sample to the Karl Fischer moisture analyzer, the mass of moisture was measured under the conditions of 10 minutes of back purging, 10 minutes of cell purging, and 20 minutes of measurement. After that, the sample was added to the Karl Fischer moisture analyzer, and the mass of moisture was measured under the conditions of 10 minutes of back purging, 10 minutes of cell purging, and 20 minutes of measurement. The amount of moisture absorbed by the packaging substrate was calculated by subtracting the mass of moisture measured without the sample from the mass of moisture measured when the sample was added.

[0171] The calculated values ​​for each example and comparative example are shown in Table 1 below.

[0172] Evaluation example: Evaluation of whether or not cracks have occurred. The surface of the insulating layer in the packaging substrates for each example and comparative example was observed using an optical microscope. A "Pass" rating was given if no defects such as cracks or bubbles were found on the surface of the insulating layer; a "Fail" rating was given if such defects were present.

[0173] The calculated values ​​for each example and comparative example are shown in Table 1 below.

[0174] Evaluation example: Evaluation of whether or not delamination occurs in a high-temperature, high-humidity environment. The packaging substrates for each example and comparative example were left in an atmosphere of 85°C and 85RH for 72 hours, and then evaluated using an optical microscope to see if the insulating layer had peeled off from the core layer. A "Pass" rating was given if the insulating layer did not peel off, and a "Fail" rating was given if the insulating layer peeled off.

[0175] [Table 1]

[0176] In Table 1 above, the examples in which the Rhd value was controlled within 30% to 80% were evaluated as "Pass" in both the evaluation of whether or not cracks occurred and the evaluation of whether or not delamination occurred, whereas in the case of the comparative example in which the Rhd value was outside the range limited by the examples, it was evaluated as "Fail" in at least one of the evaluations of whether or not cracks occurred and whether or not delamination occurred.

[0177] Although preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto. Various modifications and improvements by those skilled in the art, utilizing the basic concepts of the present invention as defined in the appended claims, also fall within the scope of the present invention. [Explanation of Symbols]

[0178] 100 Packaging substrates 10-core layer 20 Insulating layer 21 First insulating layer 22 Second insulating layer 30 Electrical conductive layer 31. First electrical conduction layer 32 Second electrical conduction layer 40 1st redistribution layer

Claims

1. The system includes a core layer and an insulating layer disposed on the core layer, The insulating layer includes an insulating resin, The insulating layer includes a first insulating layer and a second insulating layer disposed on the first insulating layer. The peak intensity of the hydroxyl group measured by FT-IR in the second insulating layer is smaller than the peak intensity of the hydroxyl group measured by FT-IR in the first insulating layer. A packaging substrate in which the amount of moisture absorbed after being left for 7 days at 23°C and in a 50% RH atmosphere is measured to be between 500 ppm and 1200 ppm.

2. The packaging substrate according to claim 1, wherein the Rhd value, which is the rate of reduction of hydroxyl groups in the following formula 1, is 30% to 80%. [Formula 1] (In the above formula 1, H1 is the peak intensity of the hydroxyl group measured by FT-IR in the first insulating layer. H2 is the peak intensity of the hydroxyl group measured by FT-IR in the second insulating layer.

3. The packaging substrate according to claim 1, wherein the elastic modulus of the insulating layer measured at 23°C is 4 GPa to 8 GPa.

4. The insulating layer is disposed in contact with at least a portion of the upper surface of the core layer, The peel strength of the insulating layer relative to the upper surface of the core layer, as measured by a 90° peel test, was 25 N / cm². ２ The packaging substrate according to claim 1.

5. The insulating layer is disposed in contact with at least a portion of the upper surface of the core layer, The shear strength of the insulating layer relative to the upper surface of the core layer is 40 N / cm². ２ The packaging substrate according to claim 1.

6. The packaging substrate according to claim 1, wherein the insulating resin includes an epoxy resin.

7. The packaging substrate according to claim 1, wherein the core layer is a glass core or a ceramic core.

8. A semiconductor package comprising a packaging substrate according to claim 1, and an element electrically connected to the packaging substrate.

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