Device manufacturing systems, semiconductor manufacturing systems, and exhaust gas treatment unit

Abstract

The present invention provides a device manufacturing system and a semiconductor manufacturing system that can maintain the operation of device manufacturing equipment as much as possible, as well as an exhaust gas treatment unit used in such a device manufacturing system. [Solution] A semiconductor manufacturing system 11, which is one embodiment of a device manufacturing system, comprises a semiconductor manufacturing apparatus 13 having chambers 12a, 12b, and 12c for holding gas; flow paths 14a, 14b, and 14c connected to the chambers for guiding exhaust gas flowing out of the chambers; an exhaust gas treatment apparatus 27 installed in the flow paths for processing the exhaust gas; a branch path 44 that branches off from the flow path 26 at a branching point located upstream of the exhaust gas treatment apparatus 27 and guides the exhaust gas in parallel to the exhaust gas treatment apparatus 27; and a switching mechanism 45 that switches the flow of exhaust gas in the flow path 26 and the branch path 44.

Description

Technical Field

[0001] The present invention relates to a device manufacturing system including an exhaust gas treatment device connected to a chamber of a device manufacturing apparatus for treating exhaust gas.

Background Art

[0002] As disclosed in Patent Document 1, a decontamination device installed in an exhaust path of a semiconductor manufacturing apparatus is generally known. The exhaust gas of the semiconductor manufacturing apparatus passes through an exhaust gas treatment device such as a filter device upstream of the decontamination device. The filter device at least partially removes the material components contained in the exhaust gas.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the filter device, the filter is periodically replaced. When performing maintenance such as filter replacement, the entire semiconductor manufacturing system is stopped. Productivity decreases. The more the number of chambers increases, the higher the frequency of stoppage becomes.

[0005] An object of the present invention is to provide a device manufacturing system and a semiconductor manufacturing system capable of maintaining the operation of a device manufacturing apparatus as much as possible, and an exhaust gas treatment device unit used in such a device manufacturing system. Devices include various devices manufactured using chambers such as semiconductors, liquid crystals, and organic ELs in addition to semiconductors.

Means for Solving the Problems

[0006] A device manufacturing system according to one embodiment of the present invention comprises: a device manufacturing apparatus having a chamber for holding gas; a flow path connected to the chamber for guiding exhaust gas flowing out of the chamber; an exhaust gas treatment device installed in the flow path for treating the exhaust gas; a branch path branching off from the flow path at a branching point located upstream of the exhaust gas treatment device and guiding the exhaust gas in parallel to the exhaust gas treatment device; and a switching mechanism for switching the flow of the exhaust gas in the flow path and the branch path.

[0007] Another embodiment of the present invention provides a semiconductor manufacturing system comprising: a semiconductor manufacturing apparatus having a chamber for holding gas; a flow path connected to the chamber for guiding exhaust gas flowing out of the chamber; an exhaust gas treatment device installed in the flow path for treating the exhaust gas; a branch path branching off from the flow path at a branching point located upstream of the exhaust gas treatment device and guiding the exhaust gas in parallel to the exhaust gas treatment device; and a switching mechanism for switching the flow of the exhaust gas in the flow path and the branch path.

[0008] Another embodiment of the present invention provides an exhaust gas treatment unit comprising: a flow path that guides exhaust gas from an inlet end detachably connected to a chamber of a device manufacturing apparatus to an outlet end detachably connected to a pollution control device; an exhaust gas treatment device installed in the flow path for treating the exhaust gas; a branch path that branches off from the flow path at a branching point located upstream of the exhaust gas treatment device and guides the exhaust gas in parallel to the exhaust gas treatment device; and a switching mechanism that switches the flow of the exhaust gas in the flow path and the branch path.

[0009] Another embodiment of the present invention provides a device manufacturing apparatus having a chamber for holding gas; a flow path connected to the chamber for guiding exhaust gas flowing out of the chamber; a vacuum pump installed in the flow path for sucking the exhaust gas from the chamber; a branch path branching off from the flow path at a branching point located upstream of the vacuum pump and guiding the exhaust gas in parallel to the vacuum pump; and a switching mechanism for switching the flow of the exhaust gas in the flow path and the branch path.

[0010] A vacuum pump unit according to another embodiment of the present invention comprises a flow path that guides exhaust gas from an inlet end detachably connected to a chamber of a device manufacturing apparatus to an outlet end detachably connected to a pollution control device; a vacuum pump installed in the flow path that sucks the exhaust gas from the chamber; a branch path that branches off from the flow path at a branching point located upstream of the vacuum pump and guides the exhaust gas in parallel to the vacuum pump; and a switching mechanism that switches the flow of the exhaust gas in the flow path and the branch path. [Effects of the Invention]

[0011] As described above, the form of disclosure provides a device manufacturing system that can maintain the operation of the device manufacturing apparatus as much as possible, and an exhaust gas treatment unit used in such a device manufacturing system. [Brief explanation of the drawing]

[0012] [Figure 1] This is a schematic diagram illustrating the configuration of a film deposition system according to the first embodiment of the present invention. [Figure 2] This is a schematic diagram illustrating the configuration of a film deposition system in one modified example. [Figure 3] This is a schematic diagram illustrating the configuration of a film deposition system related to other variations. [Figure 4] This is a schematic diagram illustrating the configuration of a film deposition system related to further variations. [Figure 5]This is a schematic diagram illustrating the configuration of a film deposition system related to further variations. [Figure 6] This is a schematic diagram illustrating the configuration of the switching mechanism. [Figure 7] This is a schematic diagram illustrating the configuration of a switching mechanism related to another specific example. [Figure 8] This is a schematic diagram illustrating the configuration of a film deposition system according to a second embodiment of the present invention. [Figure 9] This is a schematic diagram illustrating the configuration of a film deposition system according to a modified example of the second embodiment. [Figure 10] This is a schematic diagram illustrating the configuration of a film deposition system according to the third embodiment of the present invention. [Modes for carrying out the invention]

[0013] One embodiment of the present invention will be described below with reference to the attached drawings.

[0014] Figure 1 schematically shows the configuration of a semiconductor manufacturing system, i.e., a film deposition system (device manufacturing system) 11 according to the first embodiment of the present invention. The film deposition system 11 comprises a film deposition apparatus (device manufacturing apparatus, i.e., semiconductor manufacturing apparatus) 13 having one or more chambers 12a, 12b, 12c, flow paths 14a, 14b, 14c connected to the individual chambers 12a, 12b, 12c to guide the exhaust gas flowing out from the chambers 12a, 12b, 12c, and exhaust gas treatment units 15a, 15b, 15c incorporated into the flow paths 14a, 14b, 14c. The flow paths 14a, 14b, 14c merge downstream of the exhaust gas treatment units 15a, 15b, 15c and are connected to a pollution control device 16. The pollution control device 16 detoxifies the exhaust gas. Here, the flow paths 14a, 14b, 14c have the same structure. For example, a scrubber device or a combustion type can be used as the pollution control device 16.

[0015] Chambers 12a, 12b, and 12c are interconnected in the wafer transfer chamber 17. Wafers are transferred in and out of the individual chambers 12a, 12b, and 12c from the wafer transfer chamber 17. A vacuum pump 18 for evacuating the wafer transfer chamber 17 is connected to the wafer transfer chamber 17. The gas sucked by the vacuum pump 18 is discharged to the general exhaust passage of the facility.

[0016] A load lock chamber 19 is connected to the wafer transfer chamber 17. Wafers are transferred in and out of the wafer transfer chamber 17 via the load lock chamber 19. A vacuum pump 21 for evacuating the load lock chamber 19 is connected to the load lock chamber 19. The gas sucked by the vacuum pump 21 is discharged to the general exhaust passage of the facility.

[0017] In the individual flow paths 14a, 14b, and 14c, vacuum pumps 23a, 23b, and 23c are incorporated upstream of the exhaust gas treatment device units 15a, 15b, and 15c. The vacuum pumps 23a, 23b, and 23c suck gas from the individual chambers 12a, 12b, and 12c. By the action of the vacuum pumps 23a, 23b, and 23c, gas is introduced into the chambers 12a, 12b, and 12c. The gas is retained in the chambers 12a, 12b, and 12c. As the gas, a raw material gas containing components generated by a gas generation device and forming a film in the chambers 12a, 12b, and 12c or air is used. For example, a CVD (Chemical Vapor Deposition) device is used as the film forming device 13. In addition, a vapor deposition device, a sputtering device, or an epitaxial device can be used as the film forming device 13. Instead of the film forming device 13, a device manufacturing device such as a doping device, that is, a semiconductor manufacturing device may be used.

[0018] The exhaust gas treatment device units 15a, 15b, and 15c include a flow path 26 that guides exhaust gas from an inlet end 24 that is separably connected to the chambers 12a, 12b, 12c to an outlet end 25 that is separably connected to the decontamination device 16, and an exhaust gas treatment device 27 that is installed in the flow path 26 and treats the exhaust gas. The inlet end 24 of the flow path 26 is separably coupled to a pipe 29 that extends from the discharge ports of the vacuum pumps 23a, 23b, 23c at the upstream mating surface 28. A seal member (gasket) 31 is sandwiched between the inlet end 24 of the flow path 26 and the pipe 29. The seal member 31 ensures airtightness between the inlet end 24 and the pipe 29. Similarly, the outlet end 25 of the flow path 26 is coupled to an exhaust pipe 33 that leads to the decontamination device 16 at the downstream mating surface 32. A seal member (gasket) 34 is sandwiched between the outlet end 25 of the flow path 26 and the exhaust pipe 33. The seal member 34 ensures airtightness between the outlet end 25 and the exhaust pipe 33.

[0019] The exhaust gas treatment device 27 includes an inlet pipe 36 that is separably connected to a pipe 35 of the flow path 26 that extends from the inlet end 24, and an outlet pipe 38 that is separably connected to a pipe 37 of the flow path 26 that leads to the outlet end 25. The inlet pipe 36 is separably coupled to the pipe 35 of the flow path 26 at the first mating surface 39. A seal member (gasket) 41 is sandwiched between the pipe 35 and the inlet pipe 36. The seal member 41 ensures airtightness between the pipe 35 and the inlet pipe 36. The outlet pipe 38 is separably coupled to the pipe 37 of the flow path 26 at the second mating surface 42. A seal member (gasket) 43 is sandwiched between the pipe 37 and the outlet pipe 38. The seal member 43 ensures airtightness between the pipe 37 and the outlet pipe 38. The exhaust gas treatment device 27 at least partially removes the material components contained in the incoming exhaust gas. For example, a filter device is used for the exhaust gas treatment device 27. The filter device holds a filter material that is disposed in the flow path of the exhaust gas and captures the material components.

[0020] The exhaust gas treatment units 15a, 15b, and 15c each include a branch path 44 that branches off from the flow path 26 at a branching point located upstream of the exhaust gas treatment device 27 and guides the exhaust gas in parallel to the exhaust gas treatment device 27, and a switching mechanism 45 that switches the flow of exhaust gas between the flow path 26 and the branch path 44. The switching mechanism 45 includes a three-way valve 45a that connects the flow path 26 extending from the inlet end 24, the flow path 26 leading to the piping 35, and the branch path 44, and a three-way valve 45b that connects the flow path 26 extending from the piping 37, the flow path 26 leading to the outlet end 25, and the branch path 44. The branching point is set at the three-way valve 45a.

[0021] An exhaust gas treatment device 47 is installed in the branch line 44 to treat exhaust gases. The exhaust gas treatment device 47 comprises an inlet pipe 49 that is detachably connected to the piping 48 of the branch line 44 extending from the branching point (three-way valve 45a), and an outlet pipe 52 that is detachably connected to the piping 51 of the branch line 44 leading to the confluence point with the flow path 26 (three-way valve 45b). The inlet pipe 49 is detachably connected to the piping 48 of the branch line 44 at a third mating surface 53. A sealing member (gasket) 54 is placed between the piping 48 and the inlet pipe 49. The sealing member 54 ensures airtightness between the piping 48 and the inlet pipe 49. The outlet pipe 52 is detachably connected to the piping 51 of the branch line 44 at a fourth mating surface 55. A sealing member (gasket) 56 is placed between the piping 51 and the outlet pipe 52. The sealing member 56 ensures airtightness between the piping 51 and the outlet pipe 52. The exhaust gas treatment device 47 removes at least partially the material components contained in the incoming exhaust gas. For example, a filter device is used in the exhaust gas treatment device 47. The filter device is placed in the exhaust gas flow path and holds a filter material that captures the material components.

[0022] Next, the operation of the film deposition system 11 will be described. Vacuum pumps 23a, 23b, and 23c draw gas from the corresponding chambers 12a, 12b, and 12c. The drawn-out gas flows from the flow path 26 into the exhaust gas treatment device 27. Here, three-way valves 45a and 45b connect the vacuum pumps 23a, 23b, and 23c to the exhaust gas treatment device 27 in the flow path 26. The branch passage 44 is shut off from the vacuum pumps 23a, 23b, and 23c. The gas is exhausted from the abatement device 16.

[0023] Next, raw material gas is introduced into chamber 12 from the gas generator. The raw material gas contains material components that form the film. Chamber 12 is filled with the raw material gas. The pressure inside chamber 12 is adjusted according to the operation of vacuum pumps 23a, 23b, and 23c. Film deposition is carried out on the silicon wafer. The silicon wafer is transported in the wafer transport chamber 17. The silicon wafer is loaded into chambers 12a, 12b, and 12c in a specified order.

[0024] When exhaust gas is drawn out from chambers 12a, 12b, and 12c, it flows into the exhaust gas treatment device 27. In the exhaust gas treatment device 27, solidified material components are captured by the filter material. Material components in gaseous state pass through the filter material and flow into the abatement device 16. If there are any solidified material components that were not captured by the exhaust gas treatment device 27, these solidified material components also flow into the abatement device 16. The abatement device 16 removes the material components from the exhaust gas. The exhaust gas is rendered harmless in the abatement device 16. Since the exhaust gas treatment device 27 contributes only partially to the detoxification process, the burden on the abatement device 16 is reduced. The frequency of maintenance for the abatement device 16 is reduced.

[0025] In each of the individual flow paths 14a, 14b, and 14c, the flow of exhaust gas is switched from flow path 26 to branch path 44 for maintenance of the exhaust gas treatment device 27. The flow of exhaust gas is stopped in the exhaust gas treatment device 27. The exhaust gas flows in parallel with the exhaust gas treatment device 27 through branch path 44. The operation of the film deposition device 13 is maintained. Here, the exhaust gas passes through the exhaust gas treatment device 47 in branch path 44. In the exhaust gas treatment device 47, solidified material components are captured by the filter material. Material components in gaseous state pass through the filter material and flow into the abatement device 16. If there are any solidified material components that were not captured in the exhaust gas treatment device 47, the solidified material components also flow into the abatement device 16. Material components are removed from the exhaust gas in the abatement device 16. The exhaust gas is rendered harmless in the abatement device 16.

[0026] In this embodiment, the inlet ends 24 of the exhaust gas treatment units 15a, 15b, and 15c are detachably connected to the piping 29 at the upstream mating surface 28. The outlet ends 25 of the exhaust gas treatment units 15a, 15b, and 15c are detachably connected to the exhaust pipe 33 at the downstream mating surface 32. Since the exhaust gas treatment units 15a, 15b, and 15c are detachably installed between the film deposition apparatus 13 and the pollution control apparatus 16, they can be easily integrated into existing facilities. Since the branching passage 44 and the switching mechanism 45 are unitized in the exhaust gas treatment apparatus 27, the installation work is simplified.

[0027] As shown in Figure 2, the exhaust gas treatment unit 15a may be common to multiple chambers 12a, 12b, and 12c. As shown in Figure 3, the exhaust gas treatment device 27 within the exhaust gas treatment unit 15a may have performance equivalent to that of the abatement device 16. In this case, the abatement device 16 is omitted downstream of the exhaust gas treatment unit 15a.

[0028] Alternatively, as shown in Figures 4 and 5, the switching mechanism 45 may be constructed using on-off valves 61a, 61b, 62a, and 62b installed in the flow path 26 and branch path 44, respectively, which are connected in parallel to each other. Here, the upstream on-off valves 61a and 61b constitute a valve mechanism that opens and closes the flow path 26 and the branch path 44 downstream of the branching point in response to a single operation. Similarly, the downstream on-off valves 62a and 62b constitute a valve mechanism that opens and closes the flow path 26 and the branch path 44 in response to a single operation. When the flow path 26 is opened, the branch path 44 is closed. When the branch path 44 is opened, the flow path 26 is closed. The on-off valves 61a and 61b are equipped with valve bodies 64 that rotate around a pivot shaft 63, for example, as shown in Figure 6. When the opening 65 of the valve body 64 is aligned with the flow path 26, the flow path 26 is opened. The branch path 44 is blocked by the valve body 64. When the opening 65 of the valve body 64 is aligned with the branch passage 44, the branch passage 44 is opened. The flow path 26 is blocked by the valve body 64. The on-off valves 62a and 62b are configured similarly. The opening and closing of the flow path 26 and the branch passage 44 are achieved by the rotation of one valve body 64. In addition, the on-off valves 61a and 61b may include valve bodies 68 that rotate around a pivot shaft 67 for each flow path 26 and branch passage 44, as shown in Figure 7. The valve bodies 68 are interconnected by a common drive gear 69. As a result, when the opening 71 of the valve body 68 is aligned with the flow path 26, the flow path 26 is opened. The branch passage 44 is blocked by the valve body 68. When the opening 71 of the valve body 68 is aligned with the branch passage 44, the branch passage 44 is opened. The flow path 26 is blocked by the valve body 68. The on-off valves 62a and 62b are configured similarly.

[0029] Figure 8 schematically shows the configuration of a semiconductor manufacturing system, i.e., a film deposition system (device manufacturing system) 11a, according to a second embodiment of the present invention. Exhaust gas treatment units 81a, 81b, and 81c are incorporated into individual flow paths 14a, 14b, and 14c. Each exhaust gas treatment unit 81a, 81b, and 81c comprises a flow path 26 that guides exhaust gas from an inlet end 24, which is detachably connected to chambers 12a, 12b, and 12c, to an outlet end 25, which is detachably connected to a decontamination device 16, and an exhaust gas treatment device 27 installed in the flow path 26 for treating the exhaust gas. The inlet end 24 of the flow path 26 is detachably connected at an upstream mating surface 28 to piping 29 extending from the discharge ports of vacuum pumps 23a, 23b, and 23c. A sealing member (gasket) 31 is sandwiched between the inlet end 24 of the flow path 26 and the piping 29. The sealing member 31 ensures airtightness between the inlet end 24 and the piping 29. Similarly, the outlet end 25 of the flow path 26 is connected to the exhaust pipe 33 leading to the abatement device 16 at the downstream mating surface 32. A sealing member (gasket) 34 is placed between the outlet end 25 of the flow path 26 and the exhaust pipe 33. The sealing member 34 ensures airtightness between the outlet end 25 and the exhaust pipe 33. Here, the flow paths 14a, 14b, and 14c have the same structure.

[0030] The exhaust gas treatment units 81a, 81b, and 81c each include a branching path 83 that branches off from the flow path 26 at a branching point 82 located upstream of the exhaust gas treatment device 27 and guides exhaust gas in parallel to the exhaust gas treatment device 27, and a switching mechanism 84 that switches the flow of exhaust gas between the flow path 26 and the branching path 83. An auxiliary pipe 85 is installed in parallel to the exhaust gas treatment device 27 in the branching path 83. The auxiliary pipe 85 has an inlet end 89 that is detachably connected at a third mating surface 87 to a pipe 86 that partitions the branching path 83 downstream of the branching point 82, and an outlet end 93 that is detachably connected at a fourth mating surface 92 to a pipe 91 that partitions the branching path 83 and is connected to the pollution control device 16. A sealing member (gasket) 94 is sandwiched between the pipe 86 and the inlet end 89. The sealing member 94 ensures airtightness between the pipe 86 and the inlet end 89. Similarly, a sealing member (gasket) 95 is sandwiched between the pipe 91 and the outlet end 93. The sealing member 95 ensures airtightness between the pipe 91 and the outlet end 93.

[0031] The switching mechanism 84 includes an on-off valve 61a installed in the flow path 26 downstream of the branching point 82, an on-off valve 61b installed in the branching path 83 downstream of the branching point 82, an on-off valve 62a installed in the flow path 26 downstream of the exhaust gas treatment device 27, and an on-off valve 62b installed in the branching path 83 downstream of the auxiliary pipe 85. When the flow path 26 is opened, the branching path 83 is closed. When the branching path 83 is opened, the flow path 26 is closed.

[0032] In each of the individual flow paths 14a, 14b, and 14c, the flow of exhaust gas is switched from flow path 26 to branch path 83 during maintenance of the exhaust gas treatment device 27. The flow of exhaust gas is stopped in the exhaust gas treatment device 27. The exhaust gas flows through branch path 83 in parallel with the exhaust gas treatment device 27. The operation of the film deposition device 13 is maintained. Here, the exhaust gas flows directly into the abatement device 16. Material components are removed from the exhaust gas in the abatement device 16. The exhaust gas is rendered harmless in the abatement device 16. After the maintenance is completed, the flow of exhaust gas is switched from branch path 83 to flow path 26. The shorter the maintenance of the exhaust gas treatment device 27, the less burden is placed on the abatement device 16.

[0033] In this embodiment, the inlet ends 24 of the exhaust gas treatment units 81a, 81b, and 81c are detachably coupled to the piping 29 at the upstream mating surface 28. The outlet ends 25 of the exhaust gas treatment units 81a, 81b, and 81c are detachably coupled to the exhaust pipe 33 at the downstream mating surface 32. Since the exhaust gas treatment units 81a, 81b, and 81c are detachably installed between the film deposition apparatus 13 and the pollution control apparatus 16, they can be easily integrated into existing facilities. Since the branching passage 83 and the switching mechanism 84 are unitized in the exhaust gas treatment apparatus 27, the installation work is simplified. As shown in Figure 9, the exhaust gas treatment unit 81a may be common to multiple chambers 12a, 12b, and 12c.

[0034] Figure 10 schematically shows the configuration of a semiconductor manufacturing system, i.e., a film deposition system (device manufacturing system) 11b, according to a third embodiment of the present invention. Exhaust gas treatment units 96a, 96b, and 96c are incorporated into individual flow paths 14a, 14b, and 14c. Each exhaust gas treatment unit 96a, 96b, and 96c comprises a flow path 26 that guides exhaust gas from an inlet end 24, which is detachably connected to chambers 12a, 12b, and 12c, to an outlet end 25, which is detachably connected to a decontamination device 16, and an exhaust gas treatment device 27 installed in the flow path 26 for treating the exhaust gas. The inlet end 24 of the flow path 26 is detachably connected at an upstream mating surface 28 to piping 29 extending from the discharge ports of vacuum pumps 23a, 23b, and 23c. A sealing member (gasket) 31 is sandwiched between the inlet end 24 of the flow path 26 and the piping 29. The sealing member 31 ensures airtightness between the inlet end 24 and the piping 29. Similarly, the outlet end 25 of the flow path 26 is connected to the exhaust pipe 33 leading to the abatement device 16 at the downstream mating surface 32. A sealing member (gasket) 34 is placed between the outlet end 25 of the flow path 26 and the exhaust pipe 33. The sealing member 34 ensures airtightness between the outlet end 25 and the exhaust pipe 33. Here, the flow paths 14a, 14b, and 14c have the same structure.

[0035] The exhaust gas treatment units 96a, 96b, and 96c each include a branching path 97 that branches off from the flow path 26 at a branching point located upstream of the exhaust gas treatment device 27 and guides the exhaust gas in parallel to the exhaust gas treatment device 27, and a switching mechanism 98 that switches the flow of exhaust gas between the flow path 26 and the branching path 97. The branching path 97 has a pipe 99 that partitions the upstream of the branching path 97 downstream of the branching point, and a pipe 101 that is connected to the pollution control device 16 and partitions the downstream of the branching path 97. The pipes 99 and 101 are arranged in a predetermined positional relationship. The pipes 99 and 101 face each other at their open ends.

[0036] The exhaust gas treatment device 47 is detachably mounted between the open ends of pipes 99 and 101. The exhaust gas treatment device 47 comprises an inlet pipe 49 that is detachably connected to the open end of pipe 99 at a third mating surface 53, and an outlet pipe 52 that is detachably connected to the open end of pipe 101 at a fourth mating surface 55. A sealing member (gasket) 54 is sandwiched between the open end of pipe 99 and the inlet pipe 49. The sealing member 54 ensures airtightness between pipe 99 and the inlet pipe 49. Similarly, a sealing member (gasket) 56 is sandwiched between the open end of pipe 101 and the outlet pipe 52. The sealing member 56 ensures airtightness between pipe 101 and the outlet pipe 52. The exhaust gas treatment device 47 can be the same as the exhaust gas treatment device 27 in the flow path 26.

[0037] The switching mechanism 98 includes a three-way valve 98a that interconnects a flow path 26 extending from the inlet end 24, a flow path 26 leading to the piping 35, and a branch path 97 leading to the piping 99, and a three-way valve 98b that interconnects a flow path 26 extending from the piping 38, a flow path 26 leading to the outlet end 25, and a branch path 97 extending from the piping 101. A branching point is set in the three-way valve 98a. When the exhaust gas treatment device 27 is connected to the vacuum pumps 23a, 23b, and 23c, the branch path 97 is shut off from the vacuum pumps 23a, 23b, and 23c. When the branch path 97 is connected to the vacuum pumps 23a, 23b, and 23c, the flow path 26 downstream from the branching point is shut off from the vacuum pumps 23a, 23b, and 23c. As mentioned above, in the switching mechanism 98, instead of the three-way valves 98a and 98b, an on-off valve 61a installed in the flow path 26 downstream of the branching point, an on-off valve 61b installed in the branch path 97 downstream of the branching point, an on-off valve 62a installed in the flow path 26 downstream of the exhaust gas treatment device 27, and an on-off valve 62b installed in the branch path 97 downstream of the open end of the piping 101 may be used. When the flow path 26 is opened, the branch path 97 is closed. When the branch path 97 is opened, the flow path 26 is closed.

[0038] In the individual flow paths 14a, 14b, and 14c, the exhaust gas treatment device 47 is installed in the branch path 97 for maintenance of the exhaust gas treatment device 27. The branch path 97 opens in accordance with the installation of the exhaust gas treatment device 47. The flow of exhaust gas is switched from flow path 26 to branch path 97. The flow of exhaust gas is stopped in the exhaust gas treatment device 27. The exhaust gas flows in parallel with the exhaust gas treatment device 27 through the branch path 97. The operation of the film deposition device 13 is maintained. Here, the exhaust gas passes through the exhaust gas treatment device 47 in the branch path 97. In the exhaust gas treatment device 47, solidified material components are captured by the filter material. Material components in gaseous state pass through the filter material and flow into the abatement device 16. If there are any solidified material components that were not captured by the exhaust gas treatment device 47, the solidified material components also flow into the abatement device 16. Material components are removed from the exhaust gas in the abatement device 16. The exhaust gas is rendered harmless in the abatement device 16.

[0039] After maintenance is complete, the flow of exhaust gas is switched from branch channel 97 to flow channel 26. The flow of exhaust gas is stopped in branch channel 97. The exhaust gas flows into the exhaust gas treatment device 27 in flow channel 26. In the exhaust gas treatment device 27, solidified material components are captured by the filter material. Material components in gaseous state pass through the filter material and flow into the abatement device 16. If there are any solidified material components that were not captured by the exhaust gas treatment device 27, these solidified material components also flow into the abatement device 16. The exhaust gas treatment device 47 is removed from branch channel 97. In this way, the exhaust gas treatment device 27 is maintained sequentially for each flow channel 14a, 14b, and 14c. Only one spare exhaust gas treatment device 27 is prepared for the exhaust gas treatment device 47 installed in branch channel 97. The load on the abatement device 16 during maintenance is well reduced by the reuse of the spare exhaust gas treatment device 27.

[0040] In this embodiment, the inlet ends 24 of the exhaust gas treatment units 96a, 96b, and 96c are detachably connected to the piping 29 at the upstream mating surface 28. The outlet ends 25 of the exhaust gas treatment units 96a, 96b, and 96c are detachably connected to the exhaust pipe 33 at the downstream mating surface 32. Since the exhaust gas treatment units 96a, 96b, and 96c are detachably installed between the film deposition apparatus 13 and the pollution control apparatus 16, they can be easily integrated into existing facilities. Since the branching passage 97 and the switching mechanism 98 are unitized in the exhaust gas treatment device 27, the installation work is simplified. Facility modifications are kept to a minimum.

[0041] In the individual flow paths 14a, 14b, and 14c, a vacuum pump unit may be incorporated instead of the aforementioned vacuum pumps 23a, 23b, and 23c. The vacuum pump unit, like the exhaust gas treatment units 15a, 15b, and 15c, may include a flow path that guides exhaust gas from an inlet end detachably connected to chambers 12a, 12b, and 12c to an outlet end detachably connected to exhaust gas treatment units 15a, 15b, and 15c leading to a decontamination device, and vacuum pumps 23a, 23b, and 23c installed in the flow path to draw exhaust gas from chambers 12a, 12b, and 12c. Here, the vacuum pump unit includes a branch path that branches off from the flow path at a branching point located upstream of the vacuum pumps 23a, 23b, and 23c, and guides exhaust gas in parallel to the vacuum pumps 23a, 23b, and 23c, and a switching mechanism that switches the flow of exhaust gas in the flow path and the branch path. In the branching paths, vacuum pumps may be arranged in parallel with each vacuum pump 23a, 23b, and 23c, similar to the exhaust gas treatment devices 47 of the exhaust gas treatment units 15a, 15b, and 15c. Alternatively, a spare vacuum pump may be arranged in parallel with any of the vacuum pumps 23a, 23b, and 23c only during maintenance, similar to the exhaust gas treatment devices 47 of the exhaust gas treatment units 96a, 96b, and 96c. In the individual flow paths 14a, 14b, and 14c, the operation of the film deposition apparatus 13 is maintained during maintenance of the vacuum pumps 23a, 23b, and 23c. Similarly, vacuum pumps 18 and 21 may be replaced with a vacuum pump unit. The vacuum pump unit may be configured similarly to the other exhaust gas treatment units 81a, 81b, 81c, 96a, 96b, and 96c. [Explanation of Symbols]

[0042] 11. Device Manufacturing Systems (Thin Film Deposition Systems) 11a Device manufacturing system (thin film deposition system) 11b Device manufacturing system (thin film deposition system) 12a Chamber 12b Chamber 12c chamber 13. Device manufacturing equipment (film deposition equipment) 14a Flow channel 14b Channel 14c channel 15a Exhaust gas treatment unit 15b Exhaust gas treatment unit 15c Exhaust gas treatment unit 16 Abatement equipment 26 channels 27 Exhaust gas treatment device 36 Inflow pipe 38 Outflow pipe 39 First mating surface 42 Second mating surface 44 Forks in the road 47 Exhaust gas treatment device 49 Inflow pipe 52 Outflow pipe 85 Auxiliary pipe 87 Third mating surface 92 Fourth mating surface

Claims

1. A device manufacturing apparatus having a chamber for holding gas, A passage connected to the chamber and guiding the exhaust gas flowing out of the chamber, An exhaust gas treatment device installed in the aforementioned flow path for treating the exhaust gas, A branching path that branches off from the flow path at a branching point located upstream of the exhaust gas treatment device and guides the exhaust gas in parallel to the exhaust gas treatment device, A switching mechanism that switches the flow of the exhaust gas in the aforementioned flow path and the aforementioned branch path. A device manufacturing system equipped with the following features.

2. A semiconductor manufacturing apparatus having a chamber for holding gas, A passage connected to the chamber and guiding the exhaust gas flowing out of the chamber, An exhaust gas treatment device installed in the aforementioned flow path for treating the exhaust gas, A branching path that branches off from the flow path at a branching point located upstream of the exhaust gas treatment device and guides the exhaust gas in parallel to the exhaust gas treatment device, A switching mechanism that switches the flow of the exhaust gas in the aforementioned flow path and the aforementioned branch path. A semiconductor manufacturing system equipped with the following features.

3. The switching mechanism includes a valve mechanism that opens and closes the flow path downstream of the branching point and opens and closes the branching path in response to a single operation. The semiconductor manufacturing system according to claim 2.

4. The exhaust gas treatment device is further provided with a detoxification device connected to the flow path and the branch path downstream of the exhaust gas treatment device to neutralize the incoming exhaust gas. The semiconductor manufacturing system according to claim 2.

5. The system comprises an inlet pipe extending upstream from the exhaust gas treatment device and connected at a first mating surface to a pipe that partitions the flow path downstream of the branching point, and an outlet pipe extending downstream from the exhaust gas treatment device and connected at a second mating surface to a pipe that partitions the flow path and is connected to the pollution control device. The semiconductor manufacturing system according to claim 4.

6. The auxiliary pipe has an inlet end that is connected at a third mating surface to the piping that demarcates the branch path downstream of the branching point, and an outlet end that is connected at a fourth mating surface to the piping that demarcates the branch path and is connected to the pollution control device. The semiconductor manufacturing system according to claim 5.

7. A flow path that guides exhaust gas from an inlet end detachably connected to the chamber of a device manufacturing apparatus to an outlet end detachably connected to a pollution control device, An exhaust gas treatment device installed in the aforementioned flow path for treating the exhaust gas, A branching path that branches off from the flow path at a branching point located upstream of the exhaust gas treatment device and guides the exhaust gas in parallel to the exhaust gas treatment device, A switching mechanism that switches the flow of the exhaust gas in the aforementioned flow path and the aforementioned branch path. An exhaust gas treatment unit equipped with the following features.

8. A device manufacturing apparatus having a chamber for holding gas, A passage connected to the chamber and guiding the exhaust gas flowing out of the chamber, A vacuum pump installed in the aforementioned flow path for drawing the exhaust gas from the chamber, A branch path that branches off from the flow path at a branching point located upstream of the vacuum pump and guides the exhaust gas in parallel to the vacuum pump, A switching mechanism that switches the flow of the exhaust gas in the aforementioned flow path and the aforementioned branch path. A device manufacturing system equipped with the following features.

9. A flow path that guides exhaust gas from an inlet end detachably connected to the chamber of a device manufacturing apparatus to an outlet end detachably connected to a pollution control device, A vacuum pump installed in the aforementioned flow path for drawing the exhaust gas from the chamber, A branch path that branches off from the flow path at a branching point located upstream of the vacuum pump and guides the exhaust gas in parallel to the vacuum pump, A switching mechanism that switches the flow of the exhaust gas in the aforementioned flow path and the aforementioned branch path. A vacuum pump unit equipped with the following features.

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