Cooling plate, system including the cooling plate, and method for controlling moisture within the system

Abstract

This invention provides an improved, simplified, and effective substrate processing system and method for capturing and removing residual moisture and water vapor from a buffer chamber during substrate transport operations. [Solution] A substrate processing system 100 for effective moisture control during manufacturing operations includes a load lock module comprising an upper chamber 140-2 and a lower chamber 140-1 having cooling plates 242-1 and 242-2, which is connected to a cryogenic pump 234 for circulating a freezing agent such as liquid nitrogen. Residual moisture and water vapor released during substrate transport are captured and condensed on the cooling plates. A regeneration pump 218-1 monitors moisture accumulation using a saturation sensor 214-1 and starts regeneration when a set threshold is reached in order to desorb residual moisture accumulated on the cooling plates.

Description

Technical Field

[0001] This disclosure generally relates to manufacturing integrated circuit (IC) devices. Specifically, the present invention relates to using a cooling plate as a getter mechanism for residual moisture and water vapor.

Background Art

[0002] Conventional substrate processing systems have issues related to residual moisture and water vapor during substrate transfer operations. When a substrate is moved from an equipment front-end module (EFEM) to a buffer chamber such as a load lock module (LLM) or a pass-through chamber (PTC), moisture and vapor originating from the substrate may enter these buffer chambers. This infiltrated moisture and vapor often gets trapped inside the chamber. The presence of residual moisture and water vapor in the buffer chamber causes several problems. For example, since these molecules tend to stick to the chamber surface and the substrate support, it is difficult to remove them using standard vacuum evacuation techniques.

Summary of the Invention

Problems to be Solved by the Invention

[0003] Existing methods for moisture removal are often complex, inefficient, or insufficient in solving these problems. Therefore, there is a need for an improved, simplified, and effective mechanism for capturing and removing residual moisture and water vapor from buffer chambers during substrate transfer operations.

Means for Solving the Problems

[0004] Any discussion, including the discussion of problems and solutions described in this section, is included in this disclosure only for the purpose of providing the background of the present disclosure, and none or all of the discussions should be considered as an admission that any of them was known at the time the present invention was made or that they otherwise constitute prior art.

[0005] According to some embodiments, a substrate processing system may include a wafer handling chamber (WHC), a WHC robot positioned within the WHC, and a buffer chamber connected to the WHC. The buffer chamber may include a cooling plate and a substrate support connected to the cooling plate. The cooling plate may be configured to capture residual moisture from the substrate placed on the substrate support. The substrate processing system may also include a cryogenic pump configured to circulate a freezing agent through the cooling plate, at least one processing module connected to the WHC, and a regeneration system. The WHC robot may be configured to transport the substrate between the buffer chamber and at least one processing module. The regeneration system may be configured to remove moisture accumulated on the cooling plate.

[0006] In some embodiments, the buffer chamber may be a load lock module.

[0007] In some embodiments, the buffer chamber may be a first buffer chamber, and the WHC may be a first wafer handling chamber. The substrate processing system may further include a second buffer chamber connected to the first wafer handling chamber and a second WHC connected to the second buffer chamber.

[0008] In some embodiments, the regeneration system may include a regeneration sensor connected to the cooling plate. The regeneration sensor may be configured to monitor regeneration parameters. The regeneration system may also include a heating mechanism connected to the buffer chamber. The heating mechanism may be configured to raise the temperature of the cooling plate to desorb moisture accumulated on the cooling plate when the regeneration parameters reach or exceed a predetermined threshold. Furthermore, the regeneration system may include a pump configured to discharge the desorbed moisture from the buffer chamber.

[0009] In some embodiments, the heating mechanism may be an infrared lamp.

[0010] In some embodiments, the heating mechanism may be an internal heater embedded within the cooling plate.

[0011] In some embodiments, the heating mechanism may include a purge gas introduced into the buffer chamber to raise the temperature inside the buffer chamber.

[0012] In some embodiments, the purge gas may be at least one of nitrogen, argon, or helium.

[0013] In some embodiments, the regeneration sensor may include a residual gas analyzer (RGA) operably connected to the cooling plate, the regeneration parameter may include the amount of moisture accumulated on the cooling plate, and if the RGA detects that the amount of moisture accumulated on the cooling plate has reached or exceeded a predetermined moisture threshold, the heating mechanism may be activated to raise the temperature of the cooling plate.

[0014] In some embodiments, the regeneration sensor may be configured to monitor the elapsed time since the completion of the previous regeneration cycle, and the regeneration parameter may include the elapsed time, and when the elapsed time reaches or exceeds a predetermined time threshold, the heating mechanism may be activated to raise the temperature of the cooling plate.

[0015] In some embodiments, the temperature of the freezing agent may be less than 130 Kelvin.

[0016] According to some embodiments, a method for controlling moisture in a substrate processing system may include providing a substrate processing system including a buffer chamber including a cooling plate connected to a cryogenic pump; circulating a freezing agent through the cooling plate using the cryogenic pump to capture residual moisture from the substrate received in the buffer chamber; determining whether one or more regeneration parameters have reached or exceeded a predetermined threshold; and initiating a regeneration process if one or more regeneration parameters have reached or exceeded a predetermined threshold.

[0017] In some embodiments, the freezing agent may include liquid nitrogen.

[0018] In some embodiments, initiating the regeneration process may include separating the buffer chamber from other chambers of the substrate processing system, temporarily suspending the circulation of the freezing agent through the cooling plate, raising the temperature inside the buffer chamber to a predetermined regeneration temperature to desorb residual moisture accumulated on the cooling plate, and pumping out the desorbed residual moisture from inside the buffer chamber.

[0019] In some embodiments, raising the temperature inside the buffer chamber to a predetermined regeneration temperature may be achieved by using at least one of an external heater operating outside the buffer chamber and an internal heater embedded in a cooling plate.

[0020] In some embodiments, raising the temperature inside the buffer chamber to a predetermined regeneration temperature may include introducing a purge gas into the buffer chamber.

[0021] In some embodiments, determining whether one or more regeneration parameters have reached or exceeded a predetermined threshold may include monitoring the amount of moisture accumulated on the cooling plate and initiating a regeneration process if the amount of accumulated moisture exceeds a predetermined amount.

[0022] In some embodiments, the method according to claim 17, wherein monitoring the amount of moisture accumulated on the cooling plate includes using a residual gas analyzer.

[0023] According to some embodiments, the regeneration system may include a cooling plate configured to accumulate residual moisture from a substrate, a regeneration pump connected to the cooling plate, a heating mechanism connected to the cooling plate and configured to raise the temperature of the cooling plate, and a residual gas analyzer (RGA) operably connected to the cooling plate and configured to monitor the residual moisture accumulated on the cooling plate. If the RGA detects that the monitored residual moisture is greater than a predetermined threshold, the heating mechanism may be activated to raise the temperature of the cooling plate.

[0024] In some embodiments, the regeneration pump may be a turbomolecular pump (TMP).

[0025] A semiconductor processing system is provided. The processing system includes at least one wafer handling chamber (WHC), a WHC robot provided within at least one WHC, and a buffer chamber connected to the WHC. The buffer chamber further includes a cooling plate and at least a substrate support connected to the cooling plate, wherein the cooling plate is configured to have moisture residue from a substrate placed on the substrate support discharged by a pump. The cooling plate is connected to a cryogenic pump configured to circulate cryogenic fluid through the cooling plate. At least one processing module is connected to the WHC, and the WHC robot is configured to transport substrates between the buffer chamber and at least one processing module. The processing system further includes a regeneration system configured to remove moisture accumulated on the cooling plate.

[0026] A method for moisture control during substrate transfer processing in a semiconductor processing system is provided. The method includes connecting a cryopump to a cooling plate of a buffer chamber provided within the semiconductor processing system. The method further includes circulating an extremely low temperature through the cooling plate to capture residual moisture from a substrate received within the buffer chamber. The method also includes determining whether one or more regeneration parameters have reached or exceeded a predetermined threshold. When one or more regeneration parameters reach or exceed the predetermined threshold, initiating a regeneration process.

[0027] A regeneration system is provided. The regeneration system includes a cooling plate that accumulates residual moisture resulting from transfer from one chamber of a semiconductor processing system to another chamber. The system further includes a regeneration pump connected to the cooling plate. The system also includes at least one heating mechanism connected to the cooling plate to raise the temperature of the cooling plate. The regeneration system also includes a residual gas analyzer connected to the cooling plate. The RGA is configured to monitor residual moisture accumulated on the cooling plate. When the monitored pressure is greater than a predetermined threshold, the heating mechanism is activated to raise the temperature of the cooling plate.

[0028] This summary of the invention is provided to introduce in a simplified form a selection of concepts. These concepts are further described in greater detail in the following detailed description of examples of the present disclosure. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

Brief Description of the Drawings

[0029] These and other configurations, aspects, and advantages of the invention disclosed herein are described below with reference to the drawings of certain exemplary embodiments, which are intended to illustrate the invention and are not intended to limit the invention.

[0030] [Figure 1]This is a top view of a substrate processing system according to some embodiments of this specification. [Figure 2] This is a cross-sectional view of a substrate processing system shown in Figure 1, according to several embodiments of the present invention. [Figure 3] This is a flow diagram of a method for controlling moisture content during substrate transport in the substrate processing system shown in Figure 1, according to several embodiments of the present invention. [Modes for carrying out the invention]

[0031] It should be understood that the elements in the figures are illustrated for simplification and clarity and are not necessarily drawn to scale. For example, the relative sizes of some elements in the figures may be exaggerated compared to others to help improve understanding of the illustrated embodiments of this disclosure.

[0032] Throughout this disclosure, similar reference numerals refer to drawings that identify similar structural features or embodiments. The systems and methods described herein may be in substrate processing systems employed to manufacture integrated circuit (IC) devices (e.g., logic devices and / or memory devices), such as substrate processing systems employed to deposit material layers using chemical vapor deposition (CVD) and / or atomic layer deposition (ALD) techniques during the manufacture of IC devices, but this disclosure is not limited to any substrate processing operation or the manufacture of any particular device. As used herein, the term "and / or" includes any and all combinations of one or more of the related enumerated items.

[0033] Where used in this disclosure, the term “substrate” may refer to one or more arbitrary substrate materials, such as one or more arbitrary substrate materials, which may be modified or on which devices, circuits, or films may be formed. “Substrate” can be continuous or discontinuous, rigid or flexible, solid or porous, or a combination thereof. A substrate can be in any form, such as powder, plate, or workpiece. A substrate in plate form may include wafers of various shapes and sizes. Wafers may be 200 mm in diameter, 300 mm in diameter, or 450 mm in diameter. A substrate may be formed from one or more semiconductor materials, including, in non-limiting examples, silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and / or silicon carbide.

[0034] Figure 1 shows a top view of a substrate processing system 100 (also referred to as the processing system). The substrate processing system 100 may be configured to receive front-opening unified pods (FOUPs) (e.g., 162-1, 162-2, 162-3, or 162-4) which function as means for transporting substrates during transport. In an exemplary embodiment, the FOUP 162 may include at least four pods 162-1, 162-2, 162-3, and 162-4. The processing system 100 may also include an equipment front-end module (EFEM) 160, a load lock module (LLM) 140, and at least a first wafer handling chamber (WHC) 130. Substrates housed in the FOUPs (e.g., 162-1, 162-2, 162-3, or 162-4) can be accessed by the substrate processing system 100. The EFEM 160 may include a front-end robot 164 configured to take substrates from FOUPs (e.g., 162-1, 162-2, 162-3, or 162-4) and transport those substrates to the LLM 140. As shown in Figure 1, in an exemplary embodiment, the front-end robot 164 may extend through one or more gate valves 144 to place the substrates into the LLM 140.

[0035] The processing system 100 may further include one or more processing modules (e.g., 170-1 or 170-2) that can be connected to the first WHC 130. The first WHC 130 may further include at least one robot (e.g., 132-1 or 132-2). In exemplary embodiments, the first WHC 130 may include a plurality of robots (e.g., robots 132-1 and 132-2). In further embodiments, robots 132-1 and 132-2 may be single-arm robots or dual-arm robots. Robots 132-1 and 132-2 may be configured to recover substrates from the LLM 140 and transport those substrates to the first WHC 130 via a gate valve 142. In exemplary embodiments, the substrate may then be transported (by robots 132-1 and / or 132-2) to processing modules 170-1 and 170-2 for processing (e.g., film deposition) by extending robots 132-1 and / or 132-2 through a gate valve 172.

[0036] In exemplary embodiments, the processing system 100 may further include a pass-through chamber (PTC) 180 and a second WHC 120. The processing system 100 may further include processing modules 150-1, 150-2, 150-3, and 150-4 for processing (e.g., film deposition) connected to the second WHC 120. Individual chambers of the PTC 180 (e.g., 180-1, 180-2, 180-3, and 180-4) may function similarly to the chambers of the LLM 140 (e.g., 140-1, 140-2, 140-3, or 140-4). In such exemplary embodiments, some substrates may be transported from the first WHC 130 to the pass-through chamber (PTC) 180 via a gate valve 184. Furthermore, the second WHC 120 may include at least one robot (e.g., 122-1 or 122-2). In exemplary embodiments, the second WHC 120 may include a plurality of robots (such as robots 122-1 and 122-2). In exemplary embodiments, robots 122-1 and 122-2 may be single-arm robots or dual-arm robots. Similar to robots 132-1 and 132-2, robots 122-1 and 122-2 may be configured to recover substrates from the PTC 180 and transport those substrates to the second WHC 120 via gate valve 182. In exemplary embodiments, the substrates may then be transported (by robots 122-1 and 122-2) via gate valve 152 to processing modules (e.g., 150-1, 150-2, 150-3, and 150-4) for processing (e.g., film deposition).

[0037] Referring to Figure 1, the first WHC 130 can be connected to two processing modules 170-1 and 170-2. However, in some exemplary embodiments, the first WHC 130 may have the capability to support three or more processing modules (e.g., four processing modules). In exemplary embodiments, the second WHC 120 may be connected to four processing modules 150-1, 150-2, 150-3, and 150-4. Thus, in exemplary embodiments (such as those shown in Figure 1), the processing system 100 may include six processing modules (170-1, 170-2, 150-1, 150-2, 150-3, and 150-4).

[0038] After processing, the substrate can be returned to FOUP 162 (e.g., 162-1, 162-2, 162-3, and / or 162-4). That is, the substrate processed in processing modules 150-1, 150-2, 150-3, and / or 150-4 can be recovered by robots 122-1 and 122-2 in the second WHC 120 and placed in a chamber of the PTC 180 (e.g., 180-1, 180-2, 180-3, or 180-4). The substrate can then be picked up from the PTC 180 by robots 132-1 and 132-2 in the first WHC 130 and placed in one of the chambers of the LLM 140 (e.g., 140-1, 140-2, 140-3, or 140-4). Finally, the substrates can be recovered by the front-end robot 164 and returned to the FOUP 162 (e.g., 162-1, 162-2, 162-3, or 162-4). Similarly, after processing, the substrates processed in the processing modules (e.g., 170-1 and / or 170-2) can be recovered by robots 132-1 and 132-2 in the first WHC 130 and placed in one of the chambers of the LLM 140 (e.g., 140-1, 140-2, 140-3, or 140-4). These substrates can be recovered by the front-end robot 164 and returned to the FOUP 162 (e.g., 162-1, 162-2, 162-3, or 162-4).

[0039] Referring now to Figure 2, a cross-sectional view of the processing system 100 is illustrated. As shown in Figure 2, the LLM 140 may include an upper chamber 140-2 and a lower chamber 140-1. Similarly, the PTC 180 may include an upper chamber 180-1 and a lower chamber 180-2. Furthermore, in exemplary embodiments, the LLM 140 may be divided into two sections, each section including an upper chamber and a lower chamber (see 140-1, 140-2, 140-3, and 140-4 in Figure 1). Similarly, in exemplary embodiments, the PTC 180 may be divided into two sections, each section including an upper chamber and a lower chamber (see 180-1, 180-2, 180-3, and 180-4 in Figure 1). Figure 2 shows a cross-sectional view, and therefore only one upper chamber 140-2 and one lower chamber 140-1 of the LLM 140, and one upper chamber 180-2 and one lower chamber 180-1 of the PTC 180 are visible. However, a second upper chamber (e.g., 140-4) and a second lower chamber (e.g., 140-3) of the LLM 140 can be designed and function similarly to upper chamber 140-2 and lower chamber 140-1. Similarly, a second upper chamber (e.g., 180-4) and a second lower chamber (e.g., 180-3) of the PTC 180 can be designed and function similarly to upper chamber 180-2 and lower chamber 180-1.

[0040] As further illustrated in Figure 2, each chamber in the LLM 140 and PTC 180 includes one or more substrate supports 252 (also referred to as wafer supports). The substrate supports 252 are configured to accommodate incoming substrates within their respective chambers. Thus, when receiving one or more substrates from the EFEM 160 or the first WHC 130 into the LLM 140, the substrates may be placed on one of the substrate supports 252. In exemplary embodiments, each chamber of the LLM 140 may include multiple substrate supports 252. Similarly, when receiving one or more substrates from the first WHC 130 or the second WHC 120 into the PTC 180, the substrates may be placed on one of the substrate supports 254. In exemplary embodiments, each chamber of the PTC 180 may include multiple substrate supports 254.

[0041] Furthermore, the LLM 140 may include a lower cooling plate 242-1 in the lower chamber 140-1 and an upper cooling plate 242-2 in the upper chamber 140-2. The lower cooling plate 242-1 may be connected to a substrate support 252 located in the lower chamber 140-1, and the upper cooling plate 242-2 may be connected to a substrate support 252 located in the upper chamber 140-2. Each of the lower cooling plate 242-1 and the upper cooling plate 242-2 may be configured to capture residual moisture from the substrate placed on the substrate support 252 above it and / or residual moisture in the chamber (e.g., the lower chamber 140-1 or the upper chamber 140-2) resulting from the transport of the substrate over it. Similarly, the PTC 180 may include a lower cooling plate 282-1 in the lower chamber 180-1 and an upper cooling plate 282-2 in the upper chamber 180-2. Cooling plates (e.g., 242-1, 242-2, 282-1, and 282-2) may be configured to cool the processed substrate as it emerges from the processing module. The lower cooling plate 282-1 may be connected to a substrate support 254 located in the lower chamber 180-1, and the upper cooling plate 282-2 may be connected to a substrate support 254 located in the upper chamber 180-2. Each of the lower cooling plate 282-1 and the upper cooling plate 282-2 may be configured to capture residual moisture from the substrate placed on the substrate support 254 and / or residual moisture in the chamber (e.g., the lower chamber 180-1 or the upper chamber 180-2) resulting from the transport of the substrate.

[0042] As shown in Figure 2, cooling plates 242-1 and 242-2 and cooling plates 282-1 and 282-2 are further connected to a cryogenic pump 234. Thus, cryogenic material (e.g., liquid nitrogen, also referred to as a freezing agent) is pumped into the LLM 140 and / or PTC 180 to significantly lower the temperature inside the LLM 140 and / or PTC 180 and cool the substrate. As indicated by arrows 236-1 and 236-2, the cryogenic material can be circulated through the LLM 140 and / or PTC 180 to lower the temperature inside each chamber. In some embodiments, the cryogenic material may be circulated through cooling plates (e.g., 242-1, 242-2, 282-1, and 282-2). In exemplary embodiments, the cryogenic pump 234 may be located outside the processing system 100. In exemplary embodiments, the temperature of the cryogenic material (also referred to as cryogenic) may be below 0 degrees Celsius. In exemplary embodiments, the temperature of the cryogenic material may be below 130 Kelvin. In exemplary embodiments, cooling the substrate to a cryogenic temperature condenses the partial pressure of water (i.e., H2O) to less than 1e-7 Torr. In the context of the present invention, “cryogenic material” or “freezing agent” refers to any material used to achieve or maintain a cryogenic temperature, and may include, but is not limited to, liquid nitrogen, liquid helium, or other cryogenic substances suitable for the intended application.

[0043] Therefore, any residual moisture generated during substrate transport (such as transport from the EFEM via the LLM 140 to the first WHC 130, or to the first WHC 130 via the PTC 180) can be captured by the cooling plates (i.e., plates 242-1, 242-2, 282-1, and / or 282-2) and accumulated on those cooling plates. However, cooling plates 242-1, 242-2, 282-1, and 282-2 may eventually become saturated and require regeneration to desorb the residual moisture accumulated on the cooling plates. In exemplary embodiments, a regeneration process may be initiated when the regeneration requirement is met.

[0044] In exemplary embodiments, the substrate processing system 100 may further include saturation sensors 214-1 and 214-2 (also referred to as regeneration sensors) connected to cooling plates 242-1, 242-2 and 282-1, 282-2. In exemplary embodiments, saturation sensors 214-1 and 214-2 may measure the amount of moisture accumulated on cooling plates 242-1, 242-2, 282-1, and 282-2. If the amount of accumulated moisture measured by the saturation sensors is determined to exceed a predetermined saturation threshold, a regeneration process may be initiated. In exemplary embodiments, saturation sensors 214-1 and 214-2 may include a differential exhaust residual gas analyzer (RGA). This RGA may be used to monitor the partial pressure of H2O on cooling plates 242-1, 242-2, 282-1, and 282-2. The results from the RGA indicate the amount of moisture on the cooling plates 242-1, 242-2, 282-1, and 282-2, and the regeneration frequency may be determined using the results compared to a predetermined saturation threshold. In exemplary embodiments, saturation sensors 214-1 and 214-2 may be contained within sampling chambers 212-1 and / or 212-2. In exemplary embodiments, sampling chambers 2120-1 and 212-2 may contain different spectral analyzers.

[0045] In exemplary embodiments, the playback process may be initiated based on the time elapsed between playback cycles. That is, the playback process is initiated when the elapsed time since the completion of the playback process reaches or exceeds a predetermined playback time threshold (for example, when it reaches it).

[0046] If cooling plates 242-1 and / or 242-2 are determined to be saturated, a regeneration process may be initiated. Gate valves 142 and 144 may be moved to the closed position to separate LLM 140 (and consequently cooling plates 242-1 and / or 242-2) from the first WHC 130 and EFEM 160. Similarly, if cooling plates 281-1 and / or 282-2 are determined to be saturated, regeneration may be initiated for PTC 180. Gate valves 182 and 184 may be moved to the closed position to separate PTC 180 (and consequently cooling plates 282-1 and 282-2) from the first WHC 130 and the second WHC 120. The cryogenic pump 234 may be stopped to temporarily suspend the recirculation of cryogenic material in each chamber.

[0047] Furthermore, the temperature of the cooling plates may be raised to sublimate the adsorbed moisture. In exemplary embodiments, the regeneration temperature may be room temperature. In exemplary embodiments, the temperature may be raised by operating a heating mechanism 232. In exemplary embodiments, the heating mechanism 232 (e.g., a heater) may be embedded within the cooling plates 242-1, 242-2, 282-1, and / or 282-2. In exemplary embodiments, the heating mechanism 232 may be an external heater (e.g., an infrared lamp) used to provide heat to the cooling plates 242-1, 242-2, 282-1, and / or 282-2. This external heater may be connected to each chamber (i.e., LLM 140 or PTC 180). In exemplary embodiments, the temperature within each chamber may be raised using a purge gas (e.g., hot nitrogen (N2) or argon (Ar) or helium). In such cases, the temperature of the cooling plate may be increased, and the buffer chamber may be brought to atmospheric pressure (atm) to facilitate the removal of residual moisture accumulated on the cooling plate.

[0048] The desorbed moisture can then be pumped out of the chambers of the LLM 140 and PTC 180 (resulting in cooling plates 242-1, 242-2, and 282-1, 282-2). In exemplary embodiments, the desorbed moisture may also be pumped out of the cooling plates of each chamber via regeneration pumps 218-1 and / or 218-2. Regeneration pump 218-1 may be connected to the chamber of the LLM 140, and regeneration pump 218-2 may be connected to the PTC 180. In some exemplary embodiments, regeneration pumps 218-1 and / or 218-2 may be turbomolecular pumps (TMPs) that can operate at very low pressures to quickly and efficiently exhaust. In exemplary embodiments, after the desorbed moisture has been pumped out, the cooling plates 242-1, 242-2, and 282-1, 282-2 in the chambers of the LLM 140 and PTC 180 may be cleaned for reuse. A regeneration system refers to a system that includes elements involved in the regeneration process (e.g., saturation sensors 214-1 and 214-2 and regeneration pumps 218-1 and 218-2).

[0049] Referring to Figure 3, a method 300 for controlling moisture during substrate transport is provided. Method 300 may include providing a substrate processing system including a buffer chamber containing a cooling plate connected to a cryogenic pump (block 302). The cryogenic pump may be connected to the cooling plate before the following operations are performed. Method 300 may also include circulating a cryogenic material through the cooling plate to capture residual moisture from the substrate in the buffer chamber (block 304). In exemplary embodiments, the cryogenic material may be liquid nitrogen.

[0050] Furthermore, Method 300 may include determining whether one or more regeneration parameters have reached or exceeded a predetermined threshold (block 306). In an exemplary embodiment, the regeneration parameters may include the amount of moisture accumulated on the cooling plate. Thus, an exemplary embodiment of Method 300 may further include monitoring the amount of moisture accumulated on the cooling plate. Method 300 may also include initiating a regeneration process (block 308) if one or more regeneration parameters (e.g., the amount of moisture accumulated on the cooling plate) have reached or exceeded a predetermined threshold (e.g., a predetermined amount of moisture). In an exemplary embodiment, a residual gas analyzer may be connected to the cooling plate to monitor the pressure due to the accumulation of moisture on the cooling plate. If the pressure exceeds a predetermined threshold, the regeneration process may be initiated.

[0051] In exemplary embodiments, the regeneration parameters may include time. Thus, method 300 may further include monitoring the elapsed time between regeneration cycles. For this purpose, the time elapsed since the previous regeneration process is monitored, and if the duration reaches or exceeds a predetermined regeneration time threshold (e.g., reaches it), the regeneration process may be initiated.

[0052] A regeneration process may be initiated when one or more regeneration parameters reach or exceed a predetermined threshold. In an exemplary embodiment, method 300 may further include separating the buffer chamber from other chambers of the substrate processing system, temporarily suspending the circulation of cryogenic material through a cooling plate, raising the temperature in the buffer chamber to a predetermined regeneration temperature to desorb residual moisture accumulated on the cooling plate, and pumping out the dissolved residual moisture from the buffer chamber.

[0053] In exemplary embodiments of Method 300, raising the temperature inside the buffer chamber to a predetermined regeneration temperature may further include utilizing a heating mechanism. In exemplary embodiments, the heating mechanism may include an external heater (such as an infrared (IR) lamp) operating outside the buffer chamber. In exemplary embodiments, the heating mechanism may include an internal heater that can be embedded in a cooling plate. In exemplary embodiments, the heating mechanism may include introducing a purge gas into the buffer chamber to facilitate the temperature rise inside the buffer chamber.

[0054] The steps illustrated in Figure 3 can be performed in various orders and are not limited to the specific order shown. In some embodiments, certain steps may be omitted, combined, or repeated, and the order of execution may be modified based on processing requirements. The flowchart is intended to provide an example of a feasible processing flow and should not be construed as limiting the scope of the invention to any particular set of steps.

[0055] While this disclosure has been provided in the context of certain embodiments and examples, those skilled in the art will understand that this disclosure extends beyond the embodiments specifically described to other alternative embodiments and / or uses and obvious modifications of these embodiments and their equivalents. In addition, while several variations of the embodiments of this disclosure are shown and described in detail, other modifications within the scope of this disclosure will be readily apparent to those skilled in the art based on this disclosure. It is also intended that various combinations or partial combinations of certain features and aspects of the embodiments may be made and still be included within the scope of this disclosure. Naturally, the various features and aspects of the disclosed embodiments can be combined or substituted for each other to form changing modes of the embodiments of this disclosure. Therefore, it is not intended that the scope of this disclosure should be limited by the specific embodiments described above.

[0056] Where headings are provided herein, they are for convenience only and do not necessarily affect the scope or meaning of the apparatus and methods disclosed herein. [Explanation of Symbols]

[0057] 100 Substrate Processing System 120 Second WHC 122-1 Robot 122-2 Robot 130 First wafer handling chamber (WHC) 132-1 Robot 132-2 Robot 140 Load Lock Module (LLM) 140-1 Lower Chamber 140-2 Upper Chamber 142 Gate valve 144 Gate valve 150-1 Processing Module 150-2 Processing Module 150-3 Processing Module 152 Gate valve 160 Equipment Front-End Module (EFEM) 164 Front-end robots 170-1 Processing Module 170-2 Processing Module 172 Gate valve 180 Pass-Through Chamber (PTC) 180-1 Lower Chamber 180-2 Upper Chamber 182 Gate valve 184 Gate valve 212-1 Sampling Chamber 212-2 Sampling Chamber 214-1 Saturation Sensor 214-2 Saturation Sensor 218-1 Regeneration Pump 218-2 Regeneration Pump 232 Heating mechanism 234 Cryogenic pump 242-1 Lower cooling plate 242-2 Upper Cooling Plate 252 Base material support 254 Substrate support 282-1 Lower cooling plate

Claims

1. A substrate processing system, Wafer Handling Chamber (WHC), A WHC robot placed within the WHC, A buffer chamber connected to the WHC, Cooling plate, and A buffer chamber comprising a substrate support connected to the cooling plate, the substrate support configured to capture residual moisture from a substrate placed on the substrate support, A low-temperature pump configured to circulate the freezing agent through the aforementioned cooling plate, At least one processing module connected to the WHC, wherein the WHC robot is configured to transport a substrate between the buffer chamber and the at least one processing module, A regeneration system, comprising a regeneration system configured to remove moisture accumulated on the cooling plate, A substrate processing system equipped with the following features.

2. The substrate processing system according to claim 1, wherein the buffer chamber is a load lock module.

3. The buffer chamber is the first buffer chamber, and the WHC is the first wafer handling chamber. The aforementioned substrate processing system A second buffer chamber connected to the first wafer handling chamber, A second WHC connected to the second buffer chamber, The substrate processing system according to claim 2, further comprising:

4. The aforementioned playback system A regeneration sensor connected to the cooling plate, configured to monitor regeneration parameters, A heating mechanism connected to the buffer chamber, configured to raise the temperature of the cooling plate to remove moisture accumulated on the cooling plate when the regeneration parameter reaches or exceeds a predetermined threshold, A pump configured to discharge the detached moisture from the buffer chamber, A substrate processing system according to claim 1, comprising:

5. The substrate processing system according to claim 4, wherein the heating mechanism is an infrared lamp.

6. The substrate processing system according to claim 4, wherein the heating mechanism is an internal heater embedded in the cooling plate.

7. The substrate processing system according to claim 4, wherein the heating mechanism includes a purge gas introduced into the buffer chamber to raise the temperature inside the buffer chamber.

8. The substrate processing system according to claim 7, wherein the purge gas is at least one of nitrogen, argon, or helium.

9. The regeneration sensor comprises a residual gas analyzer (RGA) operably connected to the cooling plate, The regeneration parameter includes the amount of moisture accumulated on the cooling plate. The substrate processing system according to claim 4, wherein when the RGA detects that the amount of moisture accumulated on the cooling plate has reached or exceeded a predetermined moisture threshold, the heating mechanism is activated to raise the temperature of the cooling plate.

10. The substrate processing system according to claim 4, wherein the regeneration sensor is configured to monitor the elapsed time since the completion of the previous regeneration cycle, and the regeneration parameter includes the elapsed time, and when the elapsed time reaches or exceeds a predetermined time threshold, the heating mechanism is activated to raise the temperature of the cooling plate.

11. The substrate processing system according to claim 1, wherein the temperature of the freezing agent is less than 130 Kelvin.

12. A method for controlling moisture content within a substrate processing system, To provide a substrate processing system comprising a buffer chamber equipped with a cooling plate connected to a cryogenic pump, The low-temperature pump is used to circulate the freezing agent through the cooling plate to capture residual moisture from the substrate received in the buffer chamber, Determining whether one or more playback parameters have reached or exceeded a predetermined threshold, When one or more of the aforementioned playback parameters reach or exceed a predetermined threshold, the playback process is initiated. A method that includes this.

13. The method according to claim 12, wherein the freezing agent comprises liquid nitrogen.

14. Initiating the playback process The buffer chamber is separated from the other chambers of the substrate processing system, Temporarily suspending the circulation of the freezing agent through the cooling plate, The temperature inside the buffer chamber is raised to a predetermined regeneration temperature to remove residual moisture accumulated on the cooling plate. The residual moisture that has been removed is to be exhausted from the buffer chamber using a pump, The method according to claim 12, including the method described in claim 12.

15. Raising the temperature inside the buffer chamber to the predetermined regeneration temperature is An external heater operating outside the buffer chamber, The method according to claim 14, wherein at least one of the following is used: an internal heater embedded in the cooling plate.

16. The method according to claim 14, wherein raising the temperature in the buffer chamber to the predetermined regeneration temperature includes introducing a purge gas into the buffer chamber.

17. Determining whether one or more of the aforementioned regeneration parameters have reached or exceeded the predetermined threshold is: The amount of moisture accumulated on the cooling plate is monitored, The method according to claim 12, further comprising activating the regeneration process when the amount of accumulated moisture exceeds a predetermined amount of moisture.

18. The method according to claim 17, wherein monitoring the amount of moisture accumulated on the cooling plate includes using a residual gas analyzer.

19. It is a regeneration system, A cooling plate configured to accumulate residual moisture from the substrate, A regeneration pump connected to the aforementioned cooling plate, A heating mechanism connected to the cooling plate and configured to raise the temperature of the cooling plate, A residual gas analyzer (RGA) is operably connected to the cooling plate and configured to monitor residual moisture accumulated on the cooling plate, Equipped with, A regeneration system in which, when the RGA detects that the monitored residual moisture is greater than a predetermined threshold, the heating mechanism is activated to raise the temperature of the cooling plate.

20. The regeneration system according to claim 19, wherein the regeneration pump is a turbomolecular pump (TMP).

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