Indication device

Abstract

To provide a display device with imaging capabilities. To provide a display device or imaging device with a high aperture ratio. [Solution] A display device comprising a light-emitting element that emits white light and a light-receiving element, wherein the light-emitting element has a first pixel electrode, a first organic layer, and a common electrode stacked in this order, and the light-receiving element has a second pixel electrode, a second organic layer, and a common electrode stacked in this order, the second organic layer including a photoelectric conversion layer, and the region between the light-emitting element and the light-receiving element has a first layer and a second layer, the first layer is superimposed on the second organic layer and includes the same material as the first organic layer, the second layer is superimposed on the first organic layer and includes the same material as the second organic layer, and in the region between the light-emitting element and the light-receiving element, the end of the first organic layer and the end of the first layer are provided facing each other, and in the region between the light-emitting element and the light-receiving element, the end of the second organic layer and the end of the second layer are provided facing each other.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device. One aspect of the present invention relates to an imaging device. One aspect of the present invention relates to a display device having an imaging function.

[0002] It should be noted that one aspect of the present invention is not limited to the above-mentioned technical field. Examples of technical fields of one aspect of the present invention disclosed herein include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, electronic devices, lighting devices, input devices, input / output devices, methods for driving them, or methods for manufacturing them. A semiconductor device refers to any device that can function by utilizing semiconductor properties. [Background technology]

[0003] In recent years, display devices have been required to be highly detailed in order to display high-resolution images. Furthermore, in information terminal devices such as smartphones, tablet devices, and notebook PCs (personal computers), display devices are required to be not only highly detailed but also to have low power consumption. In addition, there is a demand for display devices that not only display images but also have various additional functions, such as touch panel functionality or fingerprint imaging for authentication.

[0004] As a display device, for example, a light-emitting device having a light-emitting element has been developed. Light-emitting elements (also referred to as EL elements) that utilize the electroluminescence (EL) phenomenon have features such as being easy to make thin and light, being able to respond quickly to input signals, and being able to be driven using a DC constant voltage power supply, and are being applied to display devices. For example, Patent Document 1 discloses a flexible light-emitting device to which an organic EL element is applied. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-197522

Summary of the Invention

Problems to be Solved by the Invention

[0006] One aspect of the present invention is to provide a display device having an imaging function as one of the problems. Or, to provide a high-definition imaging device or display device as one of the problems. Or, to provide a display device or imaging device with a high aperture ratio as one of the problems. Or, to provide an imaging device or display device capable of performing high-sensitivity imaging as one of the problems. Or, to provide a display device capable of acquiring biometric information such as fingerprints as one of the problems. Or, to provide a display device that functions as a touch panel as one of the problems.

[0007] One aspect of the present invention is to provide a highly reliable display device, imaging device, or electronic device as one of the problems. One aspect of the present invention is to provide a display device, imaging device, or electronic device having a novel configuration as one of the problems. One aspect of the present invention is to reduce at least one of the problems of the prior art as one of the problems.

[0008] Note that the description of these problems does not prevent the existence of other problems. Note that one aspect of the present invention does not need to solve all of these problems. Note that other problems can be extracted from the description of the specification, drawings, claims, etc.

Means for Solving the Problems

[0009] One aspect of the present invention comprises a first light-emitting element and a photodetector, wherein the first light-emitting element has a first pixel electrode, a first organic layer, and a common electrode stacked in this order, and the photodetector has a second pixel electrode, a second organic layer, and a common electrode stacked in this order, the first organic layer includes a first light-emitting layer and a second light-emitting layer, the first light-emitting layer has a first light-emitting material, the second light-emitting layer has a second light-emitting material different from the first light-emitting material, the second organic layer includes a photoelectric conversion layer, and the region between the first light-emitting element and the photodetector comprises a first layer and a second layer, the first layer is A display device comprising a second organic layer superimposed on a first organic layer and containing the same material as the first organic layer, wherein in the region between the first light-emitting element and the light-receiving element, the end of the first organic layer and the end of the first layer are provided facing each other, and in the region between the first light-emitting element and the light-receiving element, the end of the second organic layer and the end of the second layer are provided facing each other, the first layer has a portion that overlaps with the second pixel electrode and the second organic layer, and the second layer has a portion that overlaps with the first pixel electrode and the first organic layer.

[0010] Furthermore, in the above configuration, it is preferable that the first light-emitting element emits white light.

[0011] Furthermore, in the above configuration, it is preferable that the first organic layer has two light-emitting materials, and that the light-emitting colors exhibited by each of the two light-emitting materials are complementary colors.

[0012] Furthermore, in the above configuration, a second light-emitting element is provided, the second light-emitting element is formed by stacking a third pixel electrode, a third organic layer, and a common electrode in this order, the third organic layer includes a third light-emitting layer and a fourth light-emitting layer, the third light-emitting layer has a first light-emitting material, the fourth light-emitting layer has a second light-emitting material, and the region between the second light-emitting element and the photodetector has a third layer and a fourth layer, the third layer is superimposed on the third organic layer and contains the same material as the second organic layer, and the fourth layer is Preferably, the third organic layer is superimposed on the second organic layer and contains the same material as the third organic layer, and in the region between the second light-emitting element and the photodetector, the end of the second organic layer and the end of the third layer are provided facing each other, and in the region between the second light-emitting element and the photodetector, the end of the third organic layer and the end of the fourth layer are provided facing each other, and the third layer has a portion that overlaps with the third pixel electrode and the third organic layer, and the fourth layer has a portion that overlaps with the second pixel electrode and the second organic layer.

[0013] Furthermore, in the above configuration, it is preferable that the light-receiving element is sandwiched between the first light-emitting element and the second light-emitting element in a plan view.

[0014] Furthermore, in the above configuration, it is preferable that the second light-emitting element emits white light.

[0015] Furthermore, in the above configuration, it is preferable to have a first colored layer superimposed on the first light-emitting element and a second colored layer superimposed on the second light-emitting element, wherein the wavelength range of light transmitted by the second colored layer is different from that of the first colored layer. Different wavelength ranges mean, for example, that the light transmitted through the first colored layer has intensity in the wavelength range of one color selected from blue, violet, blue-violet, green, yellow-green, yellow, orange, and red, and the light transmitted through the second colored layer has intensity in the wavelength range of another color selected from blue, violet, blue-violet, green, yellow-green, yellow, orange, and red. In addition, even if the wavelength ranges of each colored layer are different, there may be overlapping regions between them.

[0016] Furthermore, in the above configuration, there is a first colored layer superimposed on the first light-emitting element and a second colored layer superimposed on the second light-emitting element, and it is preferable that the wavelength ranges of the transmitted light of the first colored layer and the second colored layer overlap. It is also preferable that the wavelength ranges of the transmitted light of the first colored layer and the second colored layer are the same. Having the same wavelength range means, for example, that the light transmitted through the first colored layer and the light transmitted through the second colored layer both have intensity in the wavelength range of one color selected from blue, purple, blue-violet, green, yellow-green, yellow, orange, and red. Even if the wavelength ranges of each colored layer are the same, each wavelength range may have regions that do not overlap with each other.

[0017] Furthermore, in the above configuration, it is preferable that a resin layer is present, the resin layer is located in the region between the first light-emitting element and the light-receiving element, the end of the first organic layer and the end of the first layer face each other with the resin layer in between, and the end of the second organic layer and the end of the second layer face each other with the resin layer in between.

[0018] Furthermore, in the above configuration, it is preferable to have a first insulating layer, the first insulating layer being located between the first light-emitting element and the light-receiving element, and the first insulating layer being in contact with the edge of the first organic layer, the edge of the second organic layer, the edge of the first layer, and the edge of the second layer. [Effects of the Invention]

[0019] According to one aspect of the present invention, a display device having an imaging function can be provided. Alternatively, a high-definition imaging device or display device can be provided. Alternatively, a display device or imaging device with a high aperture ratio can be provided. Alternatively, an imaging device or display device capable of high-sensitivity imaging can be provided. Alternatively, a display device capable of acquiring biometric information such as fingerprints can be provided. Alternatively, a display device that functions as a touch panel can be provided.

[0020] According to one aspect of the present invention, a highly reliable display device, imaging device, or electronic device can be provided. Alternatively, a display device, imaging device, or electronic device having a novel configuration can be provided. Alternatively, at least one of the problems of the prior art can be mitigated.

[0021] Furthermore, the description of these effects does not preclude the existence of other effects. Moreover, one aspect of the present invention does not necessarily have to possess all of these effects. Other effects can be extracted from the description in the specification, drawings, claims, etc. [Brief explanation of the drawing]

[0022] [Figure 1] Figures 1A to 1D show examples of the configuration of a display device. [Figure 2] Figure 2 shows an example of a display device configuration. [Figure 3] Figures 3A and 3B show examples of display device configurations. [Figure 4] Figures 4A and 4B show examples of the configuration of a display device. [Figure 5] Figures 5A to 5E show examples of methods for manufacturing a display device. [Figure 6] Figures 6A to 6E show examples of methods for manufacturing a display device. [Figure 7] Figures 7A and 7B show examples of methods for manufacturing a display device. [Figure 8] Figures 8A to 8D show examples of methods for manufacturing a display device. [Figure 9] Figure 9A shows an example of the configuration of a display device. Figure 9B shows an example of the configuration of a transistor. [Figure 10] Figure 10 shows an example of a display device configuration. [Figure 11] Figure 11A shows an example of the configuration of a display device. Figure 11B shows an example of the configuration of a transistor. [Figure 12] Figures 12A and 12B are perspective views showing an example of a display module. [Figure 13] Figure 13 is a cross-sectional view showing an example of a display device. [Figure 14] Figure 14 is a cross-sectional view showing an example of a display device. [Figure 15] Figure 15 is a cross-sectional view showing an example of a display device. [Figure 16] Figure 16 is a cross-sectional view showing an example of a display device. [Figure 17] Figure 17 is a cross-sectional view showing an example of a display device. [Figure 18] Figures 18A, 18B, and 18D are cross-sectional views showing examples of display devices. Figures 18C and 18E show examples of images. Figures 18F through 18H are top views showing examples of pixels. [Figure 19] Figures 19A to 19J show examples of pixels. [Figure 20] Figures 20A and 20B show examples of pixels. [Figure 21] Figures 21A to 21H show examples of pixels. [Figure 22] Figures 22A and 22B show examples of pixel circuit diagrams. [Figure 23] Figures 23A to 23F show examples of display device configurations. [Figure 24] Figures 24A to 24J show examples of display device configurations. [Figure 25] Figures 25A and 25B show examples of electronic devices. [Figure 26] Figures 26A to 26D show examples of electronic devices. [Figure 27] Figures 27A to 27F show examples of electronic devices. [Figure 28] Figures 28A to 28F show examples of electronic devices. [Modes for carrying out the invention]

[0023] The embodiments will be described below with reference to the drawings. However, it will be readily apparent to those skilled in the art that the embodiments can be implemented in many different ways, and their form and details can be modified in various ways without departing from the spirit and scope thereof. Accordingly, the present invention shall not be construed as being limited to the contents of the following embodiments.

[0024] In the configuration of the invention described below, the same reference numerals are used in common across different drawings for identical parts or parts having similar functions, and repeated explanations are omitted. Furthermore, when referring to similar functions, the hatch patterns are the same, and reference numerals may not be assigned.

[0025] In the figures described herein, the size of each component, the thickness of the layers, or the area may be exaggerated for clarity. Therefore, the scale is not necessarily limited to those figures.

[0026] Furthermore, ordinal numbers such as "the first," "the second," etc., used in this specification are added to avoid confusion of constituent elements and do not imply any numerical limitation.

[0027] In the following, expressions indicating direction, such as "up" and "down," will generally be used in accordance with the orientation shown in the drawings. However, for the purpose of simplifying explanations, the direction referred to as "up" or "down" in the specification may not always coincide with that of the drawings. For example, when explaining the stacking order (or formation order) of a laminate, even if the side on which the laminate is provided (the surface to be formed, the support surface, the adhesive surface, the flat surface, etc.) is located above the laminate in the drawing, that direction may be described as "down," and the opposite direction as "up."

[0028] Furthermore, in this specification, the terms "film" and "layer" are interchangeable. For example, the terms "conductive layer" or "insulating layer" may be interchangeable with the terms "conductive film" or "insulating film."

[0029] In this specification, the term "EL layer" refers to a layer (also called a light-emitting layer) provided between a pair of electrodes of a light-emitting element and containing at least a light-emitting substance, or a laminate including a light-emitting layer.

[0030] In this specification, a display panel, which is one form of a display device, has the function of displaying (outputting) images or the like on its display surface. Therefore, a display panel is one form of an output device.

[0031] Furthermore, in this specification, a display panel on which a connector such as an FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package) is attached, or on which an IC is mounted on the board using a COG (Chip On Glass) method, may be referred to as a display panel module, display module, or simply a display panel.

[0032] (Embodiment 1) This embodiment describes an example of the configuration of a display device according to one aspect of the present invention, and an example of a method for manufacturing the display device.

[0033] One aspect of the present invention is a display device having a light-emitting element (also called a light-emitting device) and a light-receiving element (also called a light-receiving device). The light-emitting element has a pair of electrodes and an EL layer between them. The light-receiving element has a pair of electrodes and an active layer between them. The light-emitting element is preferably an organic EL element (organic electroluminescent element). The light-receiving element is preferably an organic photodiode (organic photoelectric conversion element).

[0034] Furthermore, the display device preferably includes light-emitting elements having an EL layer with the same configuration, and a colored layer overlapping the light-emitting elements. For example, a configuration that emits white light can be applied to the light-emitting elements. Subpixels exhibiting different colors each have a colored layer that transmits visible light of a different color. For example, a full-color display device can be realized by using three types of colored layers that transmit red (R), green (G), or blue (B) light, respectively.

[0035] One aspect of the present invention functions as an imaging device because it can capture images using multiple light-receiving elements. In this case, the light-emitting element can be used as a light source for imaging. Another aspect of the present invention functions as a display device because it can display images using multiple light-emitting elements. Therefore, one aspect of the present invention can be described as a display device having an imaging function, or an imaging device having a display function.

[0036] For example, in one embodiment of the present invention, a display device has light-emitting elements arranged in a matrix on the display unit, and further, light-receiving elements arranged in a matrix on the display unit. Therefore, the display unit has the function of displaying an image and the function of a light-receiving unit. Since an image can be captured by the multiple light-receiving elements provided on the display unit, the display device can function as an image sensor or a touch panel. That is, it can capture an image with the display unit, or detect when an object approaches or comes into contact with it. Furthermore, since the light-emitting elements provided on the display unit can be used as a light source when receiving light, there is no need to provide a light source separately from the display device, and a highly functional display device can be realized without increasing the number of electronic components.

[0037] In one aspect of the present invention, when an object reflects the light emitted by a light-emitting element of the display unit, a light-receiving element can detect the reflected light, thereby enabling imaging or touch detection (including non-contact) even in dark environments.

[0038] Furthermore, a display device according to one aspect of the present invention can capture a fingerprint or palm print when a finger, palm, or the like is placed in contact with the display unit. Therefore, an electronic device equipped with a display device according to one aspect of the present invention can perform personal authentication using the captured image of a fingerprint or palm print. This eliminates the need to provide a separate imaging device for fingerprint or palm print authentication, thereby reducing the number of components in the electronic device. In addition, since light-receiving elements are arranged in a matrix on the display unit, fingerprints or palm prints can be captured at any location on the display unit, resulting in a highly convenient electronic device.

[0039] When the light-emitting elements of each pixel are formed from white-emitting organic EL elements, there is no need to coat the light-emitting layer separately for each pixel. Therefore, layers other than the pixel electrodes included in the light-emitting element (such as the light-emitting layer) can be common to each pixel. However, some layers included in the light-emitting element are relatively conductive, and if a highly conductive layer is provided in common to each pixel, leakage current may occur between pixels. In particular, as the display device becomes higher resolution or has a higher aperture ratio, and the distance between pixels becomes smaller, this leakage current becomes a significant issue that can cause a decrease in the display quality of the display device. Therefore, in a display device according to one aspect of the present invention, the resolution of the display device is increased by forming at least a part of the light-emitting element in an island shape in each pixel. Here, the island-shaped portion of the light-emitting element includes a light-emitting layer.

[0040] Furthermore, in a light-emitting element that emits white light, it is not necessary to form all the layers constituting the EL layer in an island-like manner; some layers can be deposited in the same process. In a method for manufacturing a display device according to one aspect of the present invention, after forming some of the layers constituting the EL layer in an island-like manner for each pixel, the sacrificial layer can be removed, and the remaining layers constituting the EL layer (e.g., the carrier injection layer) and the common electrode (also called the upper electrode) can be formed in common.

[0041] Here, when differentiating between light-emitting elements of different colors by creating part or all of the EL layer, it is known that this can be done by deposition using a shadow mask such as a fine metal mask (FMM). Similarly, when differentiating between light-emitting elements and photodetectors by creating organic layers, FFM can also be used. However, with this method, various factors such as the precision of the FMM, the misalignment between the FMM and the substrate, the deflection of the FMM, and the spread of the contour of the deposited film due to vapor scattering cause deviations from the design in the shape and position of the island-like organic film, making it difficult to achieve high resolution and high aperture ratio. Therefore, measures have been taken to artificially increase resolution (also called pixel density) by applying special pixel arrangement methods such as pentile arrangements.

[0042] In fabrication methods using FMMs, to achieve even slightly higher resolution and aperture ratio, the portions of two adjacent island-shaped organic films can be formed to overlap. This significantly reduces the distance between the light-emitting and light-receiving regions of adjacent elements compared to when the two island-shaped organic films are not overlapped. However, when two adjacent island-shaped organic films are formed by overlapping, current leakage can occur between adjacent light-emitting and light-receiving elements through the overlapping organic films, resulting in unintended light emission. This can lead to a decrease in brightness and contrast, thus degrading display quality. Furthermore, the leakage current can worsen power efficiency and power consumption.

[0043] Furthermore, if a similar leakage current occurs between the light-emitting element and the photodetector, this leakage current can become a source of noise when imaging with the photodetector, potentially reducing the imaging sensitivity (signal-to-noise ratio (S / N ratio)).

[0044] In one aspect of the present invention, a film milling machine (FMM) is used to fabricate the organic films so that a portion of each film overlaps between adjacent light-emitting elements and photodetectors. Specifically, a layer containing a light-emitting compound (also called the light-emitting layer) of the light-emitting element and a layer containing a photoelectric conversion material (also called the active layer or photoelectric conversion layer) of the photodetector are fabricated separately using an FMM. In this case, an organic film that can be used in common between the light-emitting elements and photodetectors may be used without fabricating separate films, and a common film may be used between the light-emitting elements and between the light-emitting elements and photodetectors. Between adjacent light-emitting elements and photodetectors, an organic multilayer film is located, in which the light-emitting layer, the active layer, and other organic films are stacked. Subsequently, a portion of the organic multilayer film is etched using photolithography to divide it. This divides the current leakage path between the light-emitting element and the photodetector. As a result, noise during imaging using the photodetector can be reduced, and highly sensitive imaging can be performed.

[0045] In this way, leakage current (also called side leakage or side leakage current) between the light-emitting element and the photodetector is suppressed, enabling high-precision imaging with a high signal-to-noise ratio. Therefore, clear images can be taken even with weak light. As a result, the brightness of the light-emitting element used as the light source can be reduced during imaging, thus reducing power consumption.

[0046] Furthermore, the leakage path of current between adjacent light-emitting and light-receiving elements can be interrupted. This allows for increased brightness, improved contrast, enhanced power efficiency, or reduced power consumption.

[0047] Furthermore, it is preferable to form an insulating layer to protect the sides of the organic multilayer film exposed by etching. This can improve the reliability of the display device.

[0048] The organic film formed using FMM may be provided so as to overlap not only the pixel electrodes of the target element but also the pixel electrodes of adjacent elements. This allows for a higher density arrangement of pixel electrodes. In this case, a portion of the organic film separated from that of an adjacent element will overlap the pixel electrode of one element.

[0049] In the following, an example of the configuration and manufacturing method of a display device according to one aspect of the present invention will be described with reference to the drawings.

[0050] [Configuration Example 1] Figure 1A shows a schematic top view of the display device 100. The display device 100 has a display unit in which a plurality of pixels 110 are arranged in a matrix, and a connection unit 130 outside the display unit. The pixels 110 shown in Figure 1A are composed of four sub-pixels: sub-pixels 110a, 110b, 110c, and 110S.

[0051] A stripe array is applied to the sub-pixels 110a, 110b, and 110c of pixel 110 shown in Figure 1A.

[0052] Sub-pixels 110a, 110b, and 110c have white-emitting light-emitting elements 140a, 140b, and 140c (hereinafter sometimes collectively referred to as light-emitting element 140). Color layers 129a, 129b, and 129c (hereinafter sometimes collectively referred to as color layer 129) are superimposed on the light-emitting elements 140a, 140b, and 140c, causing each sub-pixel to emit light of a different color. Examples of sub-pixels 110a, 110b, and 110c include sub-pixels of three colors: red (R), green (G), and blue (B), and sub-pixels of three colors: yellow (Y), cyan (C), and magenta (M). The color layers are sometimes called color filters.

[0053] The sub-pixel 110S has a photodetector 140S.

[0054] In Figure 1A, to simplify the distinction between subpixels, subpixels 110a, 110b, and 110c are shown as three subpixels of red (R), green (G), and blue (B), and the symbols R, G, B, and S are assigned to the light-emitting or light-receiving areas of the light-emitting or light-receiving elements of each pixel. However, subpixels 110a, 110b, and 110c are not limited to three subpixels of red (R), green (G), and blue (B).

[0055] The subpixels 110a, 110b, 110c, and 110S are each arranged in a matrix. Figure 1A shows a configuration in which subpixels 110a, 110b, and 110c are arranged in a stripe pattern. Note that the arrangement method of the subpixels is not limited to this, and arrangement methods such as S-stripe arrangement, delta arrangement, Bayer arrangement, zigzag arrangement may be applied, or pentile arrangement, diamond arrangement, etc. may be used.

[0056] It is preferable to use EL elements such as OLEDs (Organic Light Emitting Diodes) or QLEDs (Quantum-dot Light Emitting Diodes) as light-emitting elements 140a, 140b, and 140c. Examples of light-emitting materials for EL elements include fluorescent materials, phosphorescent materials, inorganic compounds (such as quantum dot materials), and thermally activated delayed fluorescence (TADF) materials. As the TADF material, a material in which the singlet excited state and the triplet excited state are in thermal equilibrium may be used. Since such TADF materials have a shorter emission lifetime (excitation lifetime), it is possible to suppress the decrease in efficiency in the high-brightness region of the light-emitting element.

[0057] A light-emitting element has an EL layer between a pair of electrodes. In this specification, one of the pair of electrodes may be referred to as the pixel electrode and the other as the common electrode.

[0058] In a light-emitting element, one electrode functions as the anode and the other as the cathode. The following explanation will use the example where the pixel electrode functions as the anode and the common electrode functions as the cathode.

[0059] The configuration of the light-emitting element in this embodiment may be a single structure or a tandem structure. A single structure is preferred. By using a single structure for the light-emitting element, the driving power of the light-emitting element can be reduced. Furthermore, the manufacturing process of the light-emitting element can be simplified. An example of the configuration of the light-emitting element is shown in Embodiment 2, described later.

[0060] As the light-receiving element 140S, for example, a pn-type or pin-type photodiode can be used. The light-receiving element 140S functions as a photoelectric conversion element that detects light incident on the light-receiving element 140S and generates an electric charge. The amount of charge generated by the photoelectric conversion element is determined according to the amount of incident light. In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving element 140S. Organic photodiodes are easy to thin, lighten, and enlarge in area, and also offer a high degree of freedom in shape and design, making them applicable to a variety of devices.

[0061] Figure 1A also shows a connecting electrode 111C that is electrically connected to the common electrode 113. The connecting electrode 111C is supplied with a potential (e.g., anode potential or cathode potential) to the common electrode 113. The connecting electrode 111C is located outside the display area where the light-emitting elements 140a and the like are arranged. The common electrode 113 is also shown with a dashed line in Figure 1A.

[0062] The connecting electrode 111C can be provided along the outer perimeter of the display area. For example, it may be provided along one side of the outer perimeter of the display area, or it may be provided across two or more sides of the outer perimeter of the display area. That is, if the top surface shape of the display area is rectangular, the top surface shape of the connecting electrode 111C can be a strip, L-shape, U-shape (angle bracket shape), or square, etc.

[0063] Figures 1B, 1C, and 1D are schematic cross-sectional diagrams corresponding to the dashed-dotted lines A1-A2, A2-A3, and C1-C2 in Figure 1A, respectively. Figure 1B shows schematic cross-sectional diagrams of the light-emitting element 140c, light-emitting element 140b, light-emitting element 140a, and light-receiving element 140S, while Figure 1D shows schematic cross-sectional diagram of the connecting electrode 111C.

[0064] The display device 100 shown in Figure 1B comprises a substrate 137 and a substrate 136. In Figure 1B, the substrate 137 has a layer 101, a light-emitting element 140a, a light-emitting element 140b, a light-emitting element 140c, a light-receiving element 140S, and a protective layer 121.

[0065] Layer 101 is, for example, a layer containing a transistor.

[0066] The substrate 136 has a substrate 128, colored layers 129a, 129b, 129c, and a black matrix 129d.

[0067] A resin layer 122 is provided between substrate 137 and substrate 136. The resin layer 122 has the function of bonding substrate 137 and substrate 136 together.

[0068] As the resin layer 122, various types of curing adhesives can be used, such as UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Adhesive sheets may also be used.

[0069] The colored layers 129a, 129b, and 129c have the function of transmitting light of different colors from each other. For example, colored layer 129a transmits a different wavelength range of light than colored layer 129b. Similarly, colored layer 129b transmits a different wavelength range of light than colored layer 129c. Similarly, colored layer 129c transmits a different wavelength range of light than colored layer 129a. For example, colored layer 129a has the function of transmitting red light, colored layer 129b has the function of transmitting green light, and colored layer 129c has the function of transmitting blue light. As a result, the display device 100 can perform full-color display. Note that colored layers 129a, 129b, and 129c may also have the function of transmitting cyan, magenta, and yellow light.

[0070] Here, adjacent colored layers 129 may have regions where they overlap, for example, in regions where they do not overlap with the light-emitting element 140. By overlapping colored layers 129 that transmit light of different colors, the colored layers 129 can function as light-shielding layers in the overlapping regions. Therefore, it is possible to suppress the leakage of light emitted by the light-emitting element 140 to adjacent subpixels. For example, it is possible to suppress the incidence of light emitted by the light-emitting element 140a that overlaps with the colored layer 129a onto the colored layer 129b. Therefore, the contrast of the image displayed on the display device can be increased, and a display device with high display quality can be realized.

[0071] It is not necessary for adjacent colored layers 129 to have overlapping regions. In this case, it is preferable to provide the black matrix 129d in a region that does not overlap with the light-emitting element 140. The black matrix 129d can be provided, for example, on the side of the substrate 128 facing the resin layer 122. Alternatively, the colored layer 129 may be provided on the side of the substrate 128 facing the resin layer 122.

[0072] The black matrix is ​​sometimes referred to as the black layer.

[0073] In Figure 1B, the sub-pixels 110a, 110b, and 110c have a configuration in which colored layers 129a, 129b, and 129c (hereinafter sometimes collectively referred to as the colored layer 129) are superimposed on the light-emitting elements 140a, 140b, and 140c. The sub-pixel 110S also has a light-receiving element 140S.

[0074] In Figure 1B, a substrate 136, on which a substrate 128 is provided with colored layers 129a, 129b, 129c and a black matrix 129d, each having the function of transmitting light of a different color, is bonded to a substrate 137 such that the colored layers of each color are positioned to overlap with the light-emitting elements 140a, 140b, and 140c of the substrate 137, thereby creating sub-pixels 110a, 110b, and 110c that emit light of different colors.

[0075] The sub-pixels may have no colored layer and be configured to extract white light to the outside. Furthermore, there may be additional sub-pixels that have no colored layer and are configured to extract white light to the outside. In Figure 1B, an example is shown in which the thicknesses of the colored layers 129a, 129b, and 129c are all the same, but the film thickness of the colored layers 129a, 129b, and 129c is not limited to this example, and it is preferable to adjust the film thickness of the colored layers 129a, 129b, and 129c as appropriate according to the transmittance of each color, and the film thicknesses of the colored layers 129a, 129b, and 129c may be different.

[0076] In the configuration shown in Figure 2, colored layers 129a, 129b, and 129c are provided superimposed on the light-emitting elements 140a, 140b, and 140c. A resin layer 122 is also provided between the substrate 128 and the colored layers 129a, 129b, and 129c. In the configuration shown in Figure 1C, for example, the colored layers 129a, 129b, and 129c may each have a region in contact with the upper surface of the protective layer 121.

[0077] As shown in the configuration in Figure 2, by forming the colored layer 129 on the protective layer 121, the alignment of each light-emitting element 140 and each colored layer 129 is easier compared to the case where the colored layer 129 is formed on the substrate 128, and an extremely high-definition display device can be realized.

[0078] The light-emitting element 140a has a pixel electrode 111a, an organic layer 115, an organic layer 112a, an organic layer 116, an organic layer 114, and a common electrode 113. The light-emitting element 140b has a pixel electrode 111b, an organic layer 115, an organic layer 112b, an organic layer 116, an organic layer 114, and a common electrode 113. The light-emitting element 140c has a pixel electrode 111c, an organic layer 115, an organic layer 112c, an organic layer 116, an organic layer 114, and a common electrode 113. The light-receiving element 140S has a pixel electrode 111S, an organic layer 115, an organic layer 155, an organic layer 116, an organic layer 114, and a common electrode 113. The organic layer 114 and the common electrode 113 are provided in common to the light-emitting elements 140a, 140b, 140c, and 140S. The organic layer 114 can also be called a common layer.

[0079] The organic layers 112a, 112b, and 112c of the light-emitting elements 140a, 140b, and 140c each contain a luminescent organic compound. The organic layers 112a, 112b, and 112c can also be called luminescent layers.

[0080] It is preferable that each of the organic layers 112a, 112b, and 112c has a structure that emits white light. Here, it is preferable that organic layers 112a, 112b, and 112c are made of the same material. In other words, it is preferable that the island-shaped organic layers 112a, 112b, and 112c are formed by patterning films that have been deposited in the same process.

[0081] The luminescent layer is a layer containing a luminescent material. The luminescent layer may contain one or more types of luminescent materials. Suitable luminescent materials include those exhibiting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red. Furthermore, materials emitting near-infrared light may also be used as luminescent materials.

[0082] Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0083] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0084] Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton; organometallic complexes (especially iridium complexes) using phenylpyridine derivatives having electron-withdrawing groups as ligands; platinum complexes; and rare earth metal complexes.

[0085] The light-emitting layer may contain one or more types of organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material). One or more of these organic compounds may be hole-transporting materials and / or electron-transporting materials. Alternatively, one or more of these organic compounds may be bipolar materials or TADF materials.

[0086] The light-emitting layer preferably comprises, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that readily forms an excitation complex. This configuration allows for efficient emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the excitation complex to the light-emitting material (phosphorescent material). By selecting a combination that forms an excitation complex that exhibits emission overlapping with the wavelength of the lowest-energy absorption band of the light-emitting material, energy transfer becomes smoother, and light emission can be obtained efficiently. This configuration simultaneously achieves high efficiency, low-voltage operation, and a long lifespan for the light-emitting element.

[0087] The organic layer 155 of the photodetector 140S contains a photoelectric conversion material that is sensitive to visible light or infrared light wavelengths. Preferably, the wavelength range to which the photoelectric conversion material of the organic layer 155 is sensitive includes one or more of the wavelength ranges of light emitted by sub-pixels 110a, sub-pixels 110b, or sub-pixels 110c. Alternatively, a photoelectric conversion material that is sensitive to infrared light with a longer wavelength than the wavelength range of light emitted by sub-pixels 110a, etc., may be used. The organic layer 155 can also be called an active layer or a photoelectric conversion layer.

[0088] In the following, when describing matters common to the light-emitting element 140a, light-emitting element 140b, and light-emitting element 140c, they may be referred to simply as light-emitting element 140. Similarly, for components distinguished by letters, such as organic layers 112a, organic layers 112b, and organic layers 112c, when describing matters common to them, the letters may be omitted and a code may be used. For example, when describing matters common to organic layers 112a, organic layers 112b, and organic layers 112c, they may be referred to simply as organic layer 112. Also, for example, when describing matters common to pixel electrodes 111a, pixel electrodes 111b, pixel electrodes 111c, and pixel electrodes 111S, they may be referred to simply as pixel electrode 111.

[0089] In each light-emitting element, the multilayer film located between the pixel electrode and the common electrode 113 can be called the EL layer. In the photodetector 140S, the multilayer film located between the pixel electrode 111S and the common electrode 113 can be called the PD layer.

[0090] In each light-emitting or light-receiving element 140S, the organic layer 115 is located between the organic layer 112 or organic layer 155 and the pixel electrode 111. The organic layer 116 is located between the organic layer 112 or organic layer 155 and the organic layer 114. The organic layer 114 is located between the organic layer 116 and the common electrode 113.

[0091] Organic layers 115, 116, and 114 can each independently have one or more of the following: an electron injection layer, an electron transport layer, an electron suppression layer, a hole suppression layer, a hole injection layer, and a hole transport layer. For example, organic layer 115 can have a stacked structure of a hole injection layer and a hole transport layer from the pixel electrode 111 side, organic layer 116 can have an electron transport layer, and organic layer 114 can have an electron injection layer. Alternatively, organic layer 115 can have a stacked structure of an electron injection layer and an electron transport layer from the pixel electrode 111 side, organic layer 116 can have a hole transport layer, and organic layer 114 can have a hole injection layer.

[0092] Furthermore, regarding the layers located between the pair of electrodes of the light-emitting or light-receiving element 140S, such as organic layer 112, organic layer 114, organic layer 115, organic layer 116, and organic layer 155, the name "organic layer" implies that these are layers constituting an organic EL element or organic photoelectric conversion element, and they do not necessarily need to contain organic compounds. For example, organic layer 112, organic layer 114, organic layer 115, and organic layer 116 can each be films that do not contain organic compounds, but only inorganic compounds or inorganic materials.

[0093] Pixel electrodes 111a, 111b, and 111c are provided for each light-emitting element. The common electrode 113 and the organic layer 114 are provided as a continuous layer common to each light-emitting element and the photodetector 140S. A conductive film that is transparent to visible light is used on either each pixel electrode or the common electrode 113, while a conductive film that is reflective is used on the other. By making each pixel electrode transparent and the common electrode 113 reflective, a bottom-emission type display device can be created. Conversely, by making each pixel electrode reflective and the common electrode 113 transparent, a top-emission type display device can be created. Furthermore, by making both each pixel electrode and the common electrode 113 transparent, a dual-emission type display device can be created.

[0094] It is preferable that the light-emitting element has a microcavity structure. Therefore, it is preferable that one of the pair of electrodes in the light-emitting element has an electrode that is both transparent and reflective to visible light (a semi-transmissive / semi-reflective electrode), and the other electrode has an electrode that is reflective to visible light (a reflective electrode). By having a microcavity structure in the light-emitting element, the light emitted from the light-emitting layer can be resonated between the two electrodes, thereby strengthening the light emitted from the light-emitting element.

[0095] Furthermore, semi-transmissive / semi-reflective electrodes can have a laminated structure consisting of a reflective electrode and an electrode that transmits visible light (also called a transparent electrode).

[0096] The light transmittance of the transparent electrode shall be 40% or more. For example, it is preferable to use an electrode with a visible light transmittance (light with a wavelength of 400 nm or more and less than 750 nm) of 40% or more in the light-emitting element. The visible light reflectance of the semi-transparent / semi-reflective electrode shall be 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode shall be 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes shall be 1 × 10⁻⁶ -2 A value of Ωcm or less is preferable.

[0097] As materials for forming the pair of electrodes (pixel electrode and common electrode) of a light-emitting element, metals, alloys, electrically conductive compounds, and mixtures thereof can be used as appropriate. Specifically, examples include indium tin oxide (In-Sn oxide, also called ITO), In-Si-Sn oxide (also called ITSO), indium zinc oxide (In-Zn oxide), In-W-Zn oxide, aluminum-containing alloys such as aluminum, nickel, and lanthanum alloys (Al-Ni-La), and silver, palladium, and copper alloys (Ag-Pd-Cu, also written as APC). In addition, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys containing these in appropriate combinations can also be used. Furthermore, elements belonging to Group 1 or Group 2 of the periodic table not exemplified above (e.g., lithium (Li), cesium (Cs), calcium (Ca), strontium (Sr)), rare earth metals such as europium (Eu), ytterbium (Yb), and alloys containing these in appropriate combinations, graphene, etc., can also be used.

[0098] A protective layer 121 is provided on the common electrode 113, covering the light-emitting elements 140a, 140b, 140c, and the light-receiving element 140S. The protective layer 121 has the function of preventing impurities such as water from diffusing to each light-emitting element from above.

[0099] Slits 120 are provided between adjacent light-emitting elements and light-receiving elements 140S, and between two adjacent light-emitting elements. The slits 120 correspond to the etched portions of organic layer 112 or organic layer 155, organic layer 115, and organic layer 116 located between adjacent light-emitting elements and light-receiving elements 140S, or between two adjacent light-emitting elements.

[0100] The slit 120 is provided with an insulating layer 125 and a resin layer 126. The insulating layer 125 is provided along the side walls and bottom surface of the slit 120. The resin layer 126 is provided on top of the insulating layer 125 and has the function of filling the recesses in the slit 120 and flattening its upper surface. By flattening the recesses in the slit 120 with the resin layer 126, the coverage of the organic layer 114, the common electrode 113, and the protective layer 121 can be improved.

[0101] Furthermore, since the slit 120 can be formed simultaneously with the formation of the opening for external connection terminals such as the connecting electrode 111C, these can be formed without increasing the number of steps. In addition, because the slit 120 has an insulating layer 125 and a resin layer 126, it has the effect of preventing short circuits between the pixel electrode 111 and the common electrode 113. The resin layer 126 also has the effect of improving the adhesion of the organic layer 114. That is, by providing the resin layer 126, the adhesion of the organic layer 114 is improved, and thus peeling of the organic layer 114 can be suppressed.

[0102] Since the insulating layer 125 is provided in contact with the side surface of the organic layer (for example, the organic layer 115), a structure can be created in which the organic layer and the resin layer 126 do not come into contact. If the organic layer and the resin layer 126 come into contact, the organic layer may dissolve due to organic solvents contained in the resin layer 126. Therefore, as shown in this embodiment, by providing the insulating layer 125 between the organic layer and the resin layer 126, the side surface of the organic layer can be protected. The slit 120 only needs to be configured to separate at least one or more of the hole injection layer, hole transport layer, electron suppression layer, light-emitting layer, active layer, hole suppression layer, electron transport layer, and electron injection layer.

[0103] The insulating layer 125 can be an insulating layer having an inorganic material. For example, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films can be used for the insulating layer 125. The insulating layer 125 may be a single layer or a laminated structure. Examples of oxide insulating films include silicon oxide film, aluminum oxide film, magnesium oxide film, indium gallium zinc oxide film, gallium oxide film, germanium oxide film, yttrium oxide film, zirconium oxide film, lanthanum oxide film, neodymium oxide film, hafnium oxide film, and tantalum oxide film. Examples of nitride insulating films include silicon nitride film and aluminum nitride film. Examples of oxidative nitride insulating films include silicon oxidative nitride film and aluminum oxidative nitride film. Examples of nitride oxide insulating films include silicon nitride oxide film and aluminum nitride oxide film. In particular, by applying an oxide metal film such as an aluminum oxide film or hafnium oxide film formed by the ALD method, or an inorganic insulating film such as a silicon oxide film, to the insulating layer 125, an insulating layer 125 with fewer pinholes and excellent function in protecting the EL layer can be formed.

[0104] In this specification, the term "oxide-nitride" refers to a material in which the oxygen content is greater than the nitrogen content, and the term "nitride oxide" refers to a material in which the nitrogen content is greater than the oxygen content. For example, when "silicon oxynitride" is written, it refers to a material in which the oxygen content is greater than the nitrogen content, and when "silicon nitride oxide" is written, it refers to a material in which the nitrogen content is greater than the oxygen content.

[0105] The insulating layer 125 can be formed using sputtering, CVD, PLD, ALD, or other methods. It is preferable to form the insulating layer 125 using the ALD method, which provides good coverage.

[0106] As the resin layer 126, an insulating layer having an organic material can be suitably used. For example, as the resin layer 126, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimidoamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins can be used. Alternatively, as the resin layer 126, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used.

[0107] Furthermore, a photosensitive resin can be used as the resin layer 126. A photoresist may be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0108] Furthermore, by using a colored material (for example, a material containing black pigment) as the resin layer 126, a function may be provided to block stray light from adjacent pixels and suppress color mixing.

[0109] Furthermore, a reflective film (for example, a metal film containing one or more selected from silver, palladium, copper, titanium, and aluminum) may be provided between the insulating layer 125 and the resin layer 126 to reflect the light emitted from the light-emitting layer and provide a function to improve light extraction efficiency.

[0110] The upper surface of the resin layer 126 is preferably flat, but the surface may have a gently curved shape. Figure 1B and others show an example in which the upper surface of the resin layer 126 has a wave-like shape with concave and convex portions, but it is not limited to this. For example, the upper surface of the resin layer 126 may be convex, concave, or flat.

[0111] As the protective layer 121, a laminated film of an inorganic insulating film and an organic insulating film can also be used. For example, it is preferable to have a configuration in which an organic insulating film is sandwiched between a pair of inorganic insulating films. Furthermore, it is preferable that the organic insulating film functions as a planarizing film. This makes the upper surface of the organic insulating film flat, thereby improving the coverage of the inorganic insulating film on top of it and enhancing its barrier properties. In addition, since the upper surface of the protective layer 121 is flat, it is preferable because it reduces the influence of uneven shapes caused by the structure below when a structure (e.g., a color filter, touch sensor electrodes, or lens array, etc.) is provided above the protective layer 121.

[0112] The protective layer 121 can be, for example, a single-layer structure or a multilayer structure including at least an inorganic insulating film. Examples of inorganic insulating films include oxide films or nitride films such as silicon oxide film, silicon oxide nitride film, silicon nitride film, silicon nitride film, aluminum oxide film, aluminum oxide nitride film, and hafnium oxide film. Alternatively, semiconductor materials such as indium gallium oxide and indium gallium zinc oxide may be used as the protective layer 121.

[0113] Figure 1D shows a connection portion 130 in which the connecting electrode 111C and the common electrode 113 are electrically connected. In the connection portion 130, the common electrode 113 is provided on the connecting electrode 111C via an organic layer 114. In addition, an insulating layer 125 is provided in contact with the side surface of the connecting electrode 111C, and a resin layer 126 is provided on the insulating layer 125.

[0114] It is not necessary to provide the organic layer 114 at the connection portion 130. In that case, at the connection portion 130, the common electrode 113 is provided in contact with the connecting electrode 111C, and the protective layer 121 is provided covering the common electrode 113.

[0115] Next, preferred configurations of the slit 120 and its vicinity will be described in detail. Figure 3A is a schematic cross-sectional view including a part of the light-emitting element 140b, a part of the light-receiving element 140S, and the region between them in Figure 1B.

[0116] As shown in Figure 3A, the ends of the pixel electrodes 111 are preferably tapered. This improves the step coverage of the organic layer 115 and the like. In this specification, a tapered end of an object means that the angle between the surface and the surface to be formed in the region of that end is greater than 0 degrees and less than 90 degrees, and that the cross-sectional shape has such that the thickness increases continuously from the end. Here, the case where the pixel electrodes 111b and the like are a single-layer structure is shown, but multiple layers may be stacked.

[0117] An organic layer 115 is provided covering the pixel electrode 111b. Similarly, an organic layer 115 is provided covering the pixel electrode 111S. These organic layers 115 are formed by dividing a continuous film with a slit 120.

[0118] On the side of the light-emitting element 140b beyond the slit 120, an organic layer 112b is provided covering the organic layer 115. On the side of the light-receiving element 140S beyond the slit 120, a layer 135b is provided on top of the organic layer 115. Layer 135b can be described as a portion of the film that becomes the organic layer 112b that is separated by the slit 120 and remains on the side of the light-receiving element 140S. Layer 135b and the organic layer 112b are provided separated by the slit 120.

[0119] Furthermore, on the side of the light-receiving element 140S beyond the slit 120, an organic layer 155 is provided covering the organic layer 115. Also, on the side of the light-emitting element 140b beyond the slit 120, a layer 135S is provided on the organic layer 112b. Layer 135S can be described as a portion of the film that becomes the organic layer 155 that is separated by the slit 120 and remains on the side of the light-emitting element 140b. Layer 135S and the organic layer 155 are provided separated by the slit 120.

[0120] The end (side) of organic layer 112b and the end of layer 135b are located opposite each other with the slit 120 in between. Similarly, the end of organic layer 155 and the end of layer 135S are located opposite each other with the slit 120 in between.

[0121] In addition, depending on the position and width of the slit 120, the formation position of the organic layer 112b, and the formation position of the organic layer 155, one or both of layers 135b and 135S may not be formed. Specifically, if the end of the organic layer 112b before the formation of the slit 120 coincides with the formation position of the slit 120, layer 135b may not be formed.

[0122] An organic layer 116 is provided covering organic layers 112b and 135S. Similarly, an organic layer 116 is provided covering organic layers 155 and 135b. These organic layers 116 are formed by dividing a continuous film at a slit 120, similar to the organic layer 115.

[0123] The insulating layer 125 is provided inside the slit 120 and is in contact with the sides of the pair of organic layers 115, the side of organic layer 112b, the side of organic layer 155, the side of layer 135b, the side of layer 135S, and the side of the pair of organic layers 116. The insulating layer 125 is also provided covering the upper surface of layer 101.

[0124] The resin layer 126 is provided in contact with the upper and side surfaces of the insulating layer 125. The resin layer 126 has the function of flattening the recesses on the surface of the organic layer 114.

[0125] The organic layer 114, common electrode 113, and protective layer 121 are formed in this order, covering the upper surfaces of the organic layer 116, insulating layer 125, and resin layer 126. Note that the organic layer 114 may be omitted if it is not needed.

[0126] Here, layers 135b and 135S are located at the edges of the film that will become organic layer 112b or organic layer 155. In the film deposition method using FMM, the thickness of the organic film tends to gradually decrease towards the edges, so layers 135b and 135S have portions that are thinner than organic layer 112b or organic layer 155. Layers 135b and 135S may be so thin that they cannot be confirmed by cross-sectional observation. Furthermore, even if layers 135b or 135S are present, it may be difficult to confirm the boundary between layer 135b and organic layer 155, or the boundary between layer 135S and organic layer 112b, by cross-sectional observation.

[0127] On the other hand, since layers 135b and 135S contain luminescent compounds (e.g., fluorescent materials, phosphorescent materials, or quantum dots), photoluminescence can be obtained by irradiating them with ultraviolet or visible light in a planar view. The presence of layers 135b and 135S can be confirmed by observing this emission with an optical microscope. Specifically, since layer 135b and organic layer 155 overlap in the area where layer 135b is located, irradiating this area with ultraviolet light will allow both light from layer 135b and light from organic layer 155 to be observed. Furthermore, from the emission spectrum, wavelength, and emission color of the light emitted from layers 135b and 135S, it can be confirmed that layer 135b or layer 135S contains the same material as organic layer 112b or organic layer 155. In some cases, it may also be possible to estimate the compounds contained in layers 135b and 135S.

[0128] The end of layer 135b opposite to the slit 120 extends to a region that overlaps with the pixel electrode 111S. That is, layer 135b has a portion that overlaps with both the pixel electrode 111S and the organic layer 155. Similarly, layer 135S has a portion that overlaps with both the pixel electrode 111b and the organic layer 112b.

[0129] In this example, organic layer 112b and organic layer 155 are fabricated separately using FMM, while the other organic layers (organic layer 115, organic layer 116) are formed as a continuous film. However, this is not the only example. For instance, either organic layer 115, organic layer 116, or both may be fabricated separately using FMM. In this case, fragments of organic layer 115 or organic layer 116 may remain near the slit 120, similar to layer 135b, etc.

[0130] The configuration shown in Figure 3A can be obtained, for example, in the manufacturing process of the display device 100 by forming the organic layer 112b and then depositing an organic film that will become the organic layer 155. On the other hand, the configuration shown in Figure 3B can be obtained, for example, by forming the organic layer 155 and then depositing an organic film that will become the organic layer 112b.

[0131] In Figure 3B, an organic layer 155 is provided covering the organic layer 115 on the light-receiving element 140S side of the slit 120. Also, a layer 135S is provided on the organic layer 115 on the light-emitting element 140b side of the slit 120. Layer 135S can be described as a portion of the film that becomes the organic layer 155 that is separated by the slit 120 and remains on the light-emitting element 140b side. Layer 135S and the organic layer 155 are provided separated by the slit 120.

[0132] Furthermore, in Figure 3B, an organic layer 112b is provided covering the organic layer 115 on the light-emitting element 140b side of the slit 120. Also, a layer 135b is provided on the organic layer 155 on the light-receiving element 140S side of the slit 120. Layer 135b can be described as a piece of the film that becomes the organic layer 112b that is separated by the slit 120 and remains on the light-receiving element 140S side. Layer 135b and the organic layer 112b are provided separated by the slit 120.

[0133] In the enlarged views shown in Figures 3A and 3B, the region between the light-emitting element 140b and the light-receiving element 140S was explained, but similar configurations may also exist between the light-emitting element 140a and the light-receiving element 140S, and between the light-emitting element 140c and the light-receiving element 140S.

[0134] For example, when the light-emitting element 140a and the light-receiving element 140S are provided in adjacent sub-pixels, or when the light-emitting element 140a and the light-receiving element 140S are located in close proximity, one embodiment of the present invention may have a structure in which the light-emitting element 140b, pixel electrode 111b, organic layer 112b, and layer 135b are replaced with the light-emitting element 140a, pixel electrode 111a, organic layer 112a, and layer 135a, as shown in Figures 3A and 3B. Here, layer 135a and organic layer 112a are provided separated by a slit 120. Furthermore, layer 135a can be described as a piece of the film that becomes organic layer 112a that is separated by the slit 120 and remains on the side of the light-receiving element 140S.

[0135] Furthermore, for example, when the light-emitting element 140c and the light-receiving element 140S are provided in adjacent sub-pixels, or when the light-emitting element 140c and the light-receiving element 140S are located in close proximity, one embodiment of the present invention may have a structure in which the light-emitting element 140b, pixel electrode 111b, organic layer 112b, and layer 135b are replaced with the light-emitting element 140c, pixel electrode 111c, organic layer 112c, and layer 135c, as shown in Figures 3A and 3B. Here, layer 135c and organic layer 112c are provided separated by a slit 120. Also, layer 135c can be described as a piece of the film that becomes organic layer 112c that is separated by the slit 120 and remains on the side of the light-receiving element 140S.

[0136] Furthermore, the closer the distance between adjacent subpixels, the thicker the organic layer provided separated by the slit 120 may become.

[0137] Figures 4A and 4B are schematic cross-sectional views of the case where the insulating layer 125 is not present. In Figures 4A and 4B, the resin layer 126 is provided in contact with the sides of the pair of organic layers 115, the side of organic layer 112b, the side of organic layer 155, the side of layer 135b, the side of layer 135S, and the side of the pair of organic layers 116.

[0138] In this case, the solvent used to form the resin layer 126 may cause a portion of the EL layer or PD layer to dissolve. Therefore, if an insulating layer 125 is not provided, it is preferable to use water, or an alcohol such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin as the solvent for the resin layer 126. However, it is not limited to these, and any solvent that does not dissolve or does not easily dissolve the EL layer and PD layer may be used.

[0139] Thus, a display device according to one aspect of the present invention can have a structure in which no insulator is provided to cover the ends of the pixel electrodes. In other words, a configuration in which no insulator is provided between the pixel electrodes and the EL layer. By adopting this configuration, the light emitted from the EL layer can be efficiently extracted, and the viewing angle dependence can be made extremely small. For example, in a display device according to one aspect of the present invention, the viewing angle (the maximum angle at which a constant contrast ratio is maintained when viewing the screen from an oblique direction) can be in the range of 100° or more and less than 180°, preferably 150° or more and 170° or less. The above viewing angle can be applied to both vertical and horizontal directions. By adopting a display device according to one aspect of the present invention, the viewing angle dependence is improved, and the visibility of the image can be enhanced.

[0140] [Example of manufacturing method] In the following, an example of a method for manufacturing a display device according to one aspect of the present invention will be described with reference to the drawings. Here, the display device shown in Figures 1A to 1C above will be used as an example. Figures 5A to 7D are schematic cross-sectional views of each step in the example of the method for manufacturing the display device described below.

[0141] The thin films (insulating films, semiconductor films, conductive films, etc.) that make up the display device can be formed using sputtering, chemical vapor deposition (CVD), vacuum deposition, pulsed laser deposition (PLD), atomic layer deposition (ALD), and other methods. CVD methods include plasma-enhanced CVD (PECVD) and thermal CVD. One type of thermal CVD is metal-organic CVD (MOCVD).

[0142] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed by methods such as spin coating, dip coating, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0143] Furthermore, when processing the thin films that constitute the display device, photolithography or the like can be used. In addition, the thin films may be processed by nanoimprint lithography, sandblasting, lift-off lithography, or the like. Alternatively, island-shaped thin films may be directly formed by a film deposition method using a shielding mask such as a metal mask.

[0144] There are two main methods of photolithography. One method involves forming a resist mask on the thin film to be processed, then processing the thin film by etching or other means, and removing the resist mask. The other method involves forming a photosensitive thin film, then exposing and developing it to process the thin film into the desired shape.

[0145] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture thereof. Other light sources such as ultraviolet light, KrF laser light, or ArF laser light can also be used. Exposure may also be performed using immersion lithography. Furthermore, extreme ultraviolet (EUV) light, X-rays, etc., may be used as the light source for exposure. An electron beam can also be used instead of the light source for exposure. Using extreme ultraviolet light, X-rays, or an electron beam is preferable because it enables extremely fine processing. Note that a photomask is not required when exposure is performed by scanning a beam such as an electron beam.

[0146] For etching thin films, methods such as dry etching, wet etching, and sandblasting can be used.

[0147] [Preparation for Layer 101] As layer 101, a substrate having at least sufficient heat resistance to withstand subsequent heat treatment can be used. When an insulating substrate is used as layer 101, glass substrates, quartz substrates, sapphire substrates, ceramic substrates, organic resin substrates, etc., can be used. In addition, semiconductor substrates such as single-crystal semiconductor substrates made of silicon, silicon carbide, etc., polycrystalline semiconductor substrates, compound semiconductor substrates such as silicon germanium, and SOI substrates can be used.

[0148] In particular, it is preferable to use a substrate as layer 101 on which a semiconductor circuit including semiconductor elements such as transistors is formed on the semiconductor substrate or insulating substrate. It is preferable that the semiconductor circuit constitutes, for example, a pixel circuit, a gate line driving circuit (gate driver), a source line driving circuit (source driver), etc. In addition to the above, an arithmetic circuit, a memory circuit, etc. may also be configured.

[0149] [Formation of pixel electrode 111 and organic layer 115] A conductive film is formed on layer 101, and a portion of the conductive film is removed by etching to form the pixel electrode 111.

[0150] Next, an organic layer 115 is formed on the pixel electrode 111 (Figure 5A). It is preferable to form the organic layer 115 without using an FMM.

[0151] Alternatively, the organic layer 115 may be prepared using FMM. In that case, the description of the subsequent organic layer 112a, etc., can be applied.

[0152] The organic layer 115 can preferably be formed by vacuum deposition. However, it is not limited to this, and can also be formed by sputtering, inkjet, or the like. Furthermore, the above-described film formation methods can be used as appropriate.

[0153] [Formation of organic layer 112a, organic layer 112b, organic layer 112c, and organic layer 155] Next, an organic layer 112W is formed on the organic layer 115. By processing the organic layer 112W using a process described later, organic layers 112a, 112b, and 112c are obtained. Organic layer 112a is formed on the organic layer 115 so as to include the region overlapping with the pixel electrode 111a. Organic layer 112b is formed on the organic layer 115 so as to include the region overlapping with the pixel electrode 111b. Organic layer 112c is formed on the organic layer 115 so as to include the region overlapping with the pixel electrode 111c.

[0154] The organic layer 112W is preferably formed by a vacuum deposition method via an FMM. Alternatively, island-like organic layers 112W may be formed using a sputtering method with an FMM or an inkjet method.

[0155] Figure 5B shows the process of depositing the organic layer 112W via FMM151W. In one aspect of the present invention, organic layers 112a, 112b, and 112c are formed by patterning the film, in this case the organic layer 112W, which is deposited in the same process.

[0156] FMM151W functions as a mask that, for example, opens up the region where the organic layer of the light-emitting element is to be placed and shields the region that will become the light-receiving element. Figure 5B shows the film deposition process using the so-called face-down method, in which the substrate is inverted so that the surface to be deposited is facing downwards.

[0157] By narrowing the spacing between pixel electrodes, light-emitting elements and light-receiving elements can be arranged at high density. In this case, the organic layer 112W may be formed to overlap with the pixel electrode 111S of an adjacent pixel. In a display device according to one aspect of the present invention, by providing a slit 120, the leakage path between the organic layer 112 of a sub-pixel on which a light-emitting element is provided and the organic layer 155 of a sub-pixel adjacent to the sub-pixel on which a light-receiving element is provided can be separated.

[0158] In deposition methods using FMMs, deposition often occurs over a wider area than the aperture pattern of the FMM. Therefore, as shown by the dashed line in Figure 5B, the organic layer 112W can be deposited over an area wider than the aperture pattern of the FMM 151W. In the example shown in Figure 5C, the organic layer 112W is formed on the pixel electrode 111S, which is the pixel electrode of the photodetector, even though the pixel electrode 111S and the aperture of the FMM 151W do not overlap.

[0159] Next, using FMM151S, an organic layer 155 is formed so as to overlap with the pixel electrode 111S (Figure 5C). Here, the organic layer 155 extends beyond the pixel electrode 111S and is also formed on the adjacent pixel electrode 111b. As a result, a portion of the organic layer 155 is formed on the organic layer 112W.

[0160] In this example, organic layer 112W and then organic layer 155 were formed in that order, but the order of formation is not limited to this.

[0161] [Formation of organic layer 116] Next, organic layer 116 is formed by covering organic layer 112W and organic layer 155 (Figure 5D). Organic layer 116 can be formed in the same manner as organic layer 115.

[0162] [Formation of sacrificial film 144] Next, a sacrificial film 144 is formed by covering the organic layer 116.

[0163] The sacrificial film 144 can be a film with high resistance to etching of organic layers 115, 112, 155, and 116, i.e., a film with a high etching selectivity ratio. Alternatively, the sacrificial film 144 can be a film with a high etching selectivity ratio with other sacrificial films, such as the sacrificial film 146 described later. Furthermore, it is particularly preferable that the sacrificial film 144 be a film that can be removed by a wet etching method that causes minimal damage to organic layers 115, 112W, 155, and 116.

[0164] As the sacrificial film 144, suitable examples include metal films, alloy films, metal oxide films, semiconductor films, organic insulating films, and inorganic insulating films. The sacrificial film 144 can be formed by various film deposition methods such as sputtering, vapor deposition, CVD, and ALD.

[0165] In particular, since the ALD method causes little damage to the layer to be formed, it is preferable to form the sacrificial film 144 directly on the organic layer 116 using the ALD method.

[0166] As the sacrificial film 144, for example, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing such metallic materials, can be used. In particular, it is preferable to use low-melting-point materials such as aluminum or silver.

[0167] Furthermore, metal oxides such as indium gallium zinc oxide (In-Ga-Zn oxide, also written as IGZO) can be used as the sacrificial film 144. In addition, indium oxide, indium zinc oxide (In-Zn oxide), indium tin oxide (In-Sn oxide), indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), etc. can be used. Alternatively, indium tin oxide containing silicon can also be used.

[0168] Furthermore, the above-mentioned method can also be applied when element M (where M is one or more selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium) is used instead of gallium. In particular, it is preferable that M be one or more selected from gallium, aluminum, or yttrium.

[0169] Furthermore, the sacrificial film 144 can be an oxide such as aluminum oxide, hafnium oxide, or silicon oxide, a nitride such as silicon nitride or aluminum nitride, or an oxynitride such as silicon oxynitride. Such inorganic insulating materials can be formed using film deposition methods such as sputtering, CVD, or ALD.

[0170] Furthermore, as the sacrificial film 144, a material that is soluble in a chemically stable solvent may be used, at least for the organic layer 116 located at the top of the EL layer. In particular, a material soluble in water or alcohol can be suitably used for the sacrificial film 144. When forming the sacrificial film 144, it is preferable to apply it using a wet deposition method while dissolved in a solvent such as water or alcohol, and then perform a heat treatment to evaporate the solvent. At this time, performing the heat treatment under a reduced pressure atmosphere is preferable because it allows the solvent to be removed at a low temperature and in a short time, thereby reducing thermal damage to the EL layer.

[0171] Wet film deposition methods that can be used to form the sacrificial film 144 include spin coating, dip coating, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, and knife coating.

[0172] As the sacrificial film 144, organic resins such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resins can be used. In addition, fluororesins such as perfluoropolymers may be used for both the sacrificial film 144 and the sacrificial film 146.

[0173] For example, an organic film (e.g., a PVA film) formed using either a vapor deposition method or the wet film formation method described above can be used as the sacrificial film 144, and an inorganic film (e.g., a silicon oxide film or a silicon nitride film) formed using a sputtering method can be used as the sacrificial film 146.

[0174] [Formation of sacrificial film 146] Next, a sacrificial film 146 is formed on the sacrificial film 144.

[0175] Sacrificial film 146 is a film used as a hard mask when etching sacrificial film 144 later. Also, sacrificial film 144 is exposed when processing sacrificial film 146 later. Therefore, a combination of sacrificial film 144 and sacrificial film 146 is selected, each having a high etching selectivity ratio. Thus, depending on the etching conditions of sacrificial film 144 and sacrificial film 146, the film that can be used for sacrificial film 146 can be selected.

[0176] The sacrificial film 146 can be selected from a variety of materials, depending on the etching conditions of the sacrificial film 144 and the sacrificial film 146. For example, it can be selected from films that can be used for the sacrificial film 144.

[0177] For example, an oxide film can be used as the sacrificial film 146. Typically, oxide films or oxynitride films such as silicon oxide, silicon oxynitride, aluminum oxide, aluminum oxynitride, hafnium oxide, and hafnium oxynitride can be used.

[0178] Furthermore, a nitride film can be used as the sacrificial film 146, for example. Specifically, nitrides such as silicon nitride, aluminum nitride, hafnium nitride, titanium nitride, tantalum nitride, tungsten nitride, gallium nitride, and germanium nitride can be used.

[0179] For example, it is preferable to use an inorganic insulating material such as aluminum oxide, hafnium oxide, or silicon oxide formed by the ALD method as the sacrificial film 144, and to use an indium-containing metal oxide such as indium gallium zinc oxide (In-Ga-Zn oxide, also written as IGZO) formed by the sputtering method as the sacrificial film 146. Alternatively, it is preferable to use a metal such as tungsten, molybdenum, copper, aluminum, titanium, or tantalum, or an alloy containing such a metal, as the sacrificial film 146.

[0180] Furthermore, an organic film that can be used for organic layers 115, 112, 155, and 116 may be used as the sacrificial film 146. For example, the same organic film used for organic layers 115, 112, 155, or 116 can be used for the sacrificial film 146. Using such an organic film is preferable because it allows the same deposition apparatus to be used for organic layers 115, 112, 155, and 116. Moreover, the process can be simplified because the sacrificial layer can be used as a mask to simultaneously remove organic layers 115, 112, 155, and 116 when etching them.

[0181] [Formation of resist mask 143] Next, a resist mask 143 is formed on the sacrificial film 146 at positions that overlap with the pixel electrodes 111a, 111b, 111c, and 111S, respectively (Figure 5E).

[0182] The resist mask 143 can use a resist material containing a photosensitive resin, such as a positive-type resist material or a negative-type resist material.

[0183] In this case, if the resist mask 143 is formed on the sacrificial film 144 without the sacrificial film 146, and defects such as pinholes exist in the sacrificial film 144, the organic layer 115, organic layer 112, organic layer 155, and organic layer 116 may dissolve due to the solvent of the resist material. Using the sacrificial film 146 can prevent such problems from occurring.

[0184] Furthermore, in cases where a solvent for the resist material is used that does not dissolve the organic layers 115, 112, 155, and 116, the resist mask 143 may be formed directly on the sacrificial layer 144 without using the sacrificial layer 146.

[0185] [Etching of sacrificial film 146] Next, the portion of the sacrificial film 146 that is not covered by the resist mask 143 is removed by etching to form a sacrificial layer 147.

[0186] When etching the sacrificial film 146, it is preferable to use etching conditions with a high selectivity ratio so that the sacrificial film 144 is not removed by the etching. The sacrificial film 146 can be etched by wet etching or dry etching, but by using dry etching, it is possible to suppress the reduction of the pattern of the sacrificial layer 147.

[0187] [Removal of Resist Mask 143] Next, remove the resist mask 143.

[0188] The resist mask 143 can be removed by wet etching or dry etching. In particular, it is preferable to remove the resist mask 143 by dry etching (also called plasma ashing) using oxygen gas as the etching gas.

[0189] In this case, the removal of the resist mask 143 is performed with the organic layer 116 covered by the sacrificial film 144, thus suppressing the impact on the organic layers 115, 112, 155, and 116. In particular, since contact with oxygen can adversely affect the electrical properties of the organic layers 115, 112, 155, and 116, this method is suitable when etching is performed using oxygen gas, such as plasma ashing. Furthermore, even when the resist mask 143 is removed by wet etching, the organic layers 116 and the like do not come into contact with the chemical solution, thus preventing them from dissolving.

[0190] [Etching of sacrificial film 144] Next, using the sacrificial layer 147 as a hard mask, a portion of the sacrificial film 144 is removed by etching to form the sacrificial layer 145 (Figure 6A).

[0191] The sacrificial film 144 can be etched by wet etching or dry etching, but dry etching is preferred because it can suppress pattern reduction.

[0192] [Etching of organic layer 116, organic layer 112W, organic layer 155, and organic layer 115] Next, the organic layers 116, 112W, 155, and a portion of 115 that are not covered by the sacrificial layer 145 are removed by etching to form a slit 120. The formation of the slit 120 causes a portion of the organic layer 112W to be removed by etching, forming organic layers 112a, 112b, and 112c.

[0193] In this case, parts of the organic layer 112W and the organic layer 155 may be separated by etching, forming layers 135R, 135G, and 135B, which are fragments of the organic layer 112W, and layer 135S, which is a fragment of the organic layer 155.

[0194] In particular, for etching organic layers 116, 112, 155, and 115, it is preferable to use dry etching with an etching gas that does not contain oxygen as its main component. This suppresses deterioration of organic layers 116, 112, 155, and 115, enabling the realization of a highly reliable display device. Examples of etching gases that do not contain oxygen as their main component include noble gases such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, H2, or He. Alternatively, a mixed gas of the above gases and an oxygen-free diluent gas can be used as the etching gas.

[0195] Furthermore, the etching of organic layers 116, 112, 155, and 115 is not limited to the above, and may be carried out by dry etching using other gases or by wet etching.

[0196] Furthermore, by using dry etching with oxygen gas or a mixed gas containing oxygen gas as the etching gas for etching organic layers 116, 112, 155, and 115, the etching rate can be increased. Therefore, etching can be performed under low power conditions while maintaining a sufficiently fast etching rate, thereby reducing damage caused by etching. In addition, defects such as the adhesion of reaction products generated during etching can be suppressed. For example, a mixed gas in which oxygen gas is added to the etching gas that does not mainly contain oxygen can be used as the etching gas.

[0197] During etching of organic layers 116, 112, 155, and 115, layer 101 is exposed. Preferably, an insulating layer is formed on the upper surface of layer 101. This insulating layer has, for example, an exposed region on the upper surface of layer 101. Preferably, a film with high resistance to etching of organic layer 115 is used as the insulating layer. Note that during etching of organic layer 115, the upper part of the insulating layer may be etched, and the portion not covered by organic layer 115 may become a thin film.

[0198] Furthermore, when etching organic layer 116, organic layer 112, organic layer 155, or organic layer 115, the sacrificial layer 147 may be etched simultaneously. Etching organic layer 116, organic layer 112, organic layer 155, or organic layer 115 and the sacrificial layer 147 by the same process simplifies the process and reduces the manufacturing cost of the display device, which is preferable.

[0199] [Removal of the sacrificial layer] Next, the sacrificial layer 147 is removed, exposing the upper surface of the sacrificial layer 145 (Figure 6B). At this point, it is preferable to leave the sacrificial layer 145 in place. It is also not necessary to remove the sacrificial layer 147 at this stage.

[0200] [Formation of insulating film 125f] Next, an insulating film 125f is formed, covering the sacrificial layer 145 and the slit 120.

[0201] The insulating film 125f functions as a barrier layer that prevents impurities such as water from diffusing into the EL layer. Forming the insulating film 125f by the ALD method, which has excellent step coverage, is preferable because it can suitably cover the sides of the EL layer.

[0202] It is preferable to use the same film for the insulating film 125f as the sacrificial layer 145, as this allows for simultaneous etching in a later process. For example, it is preferable to use inorganic insulating materials such as aluminum oxide, hafnium oxide, or silicon oxide formed by the ALD method for both the insulating film 125f and the sacrificial layer 145.

[0203] Furthermore, the materials that can be used for the insulating film 125f are not limited to those mentioned above, and any materials that can be used for the sacrificial film 144 can be used as appropriate.

[0204] [Formation of resin layer 126] Next, a resin layer 126 is formed in the region overlapping with the slit 120 (Figure 6C). The resin layer 126 can be formed in the same manner as the resin layer 163. For example, the resin layer 126 can be formed by exposing and developing a photosensitive resin after it has been formed. Alternatively, the resin layer 126 may be formed by etching a portion of the resin after the entire resin has been formed, such as by ashing.

[0205] Here, we show an example where the resin layer 126 is formed to have a width that matches the width of the slit 120.

[0206] [Etching of insulating film 125f and sacrificial layer 145] Next, the portions of the insulating film 125f and the sacrificial layer 145 that are not covered by the resin layer 126 are removed by etching, exposing the upper surface of the organic layer 116. As a result, the insulating layer 125 and the sacrificial layer 145 are formed in the region covered by the resin layer 126 (Figure 6D).

[0207] It is preferable to perform the etching of the insulating film 125f and the sacrificial layer 145 in the same process. In particular, it is preferable to perform the etching of the sacrificial layer 145 by wet etching, which causes less etching damage to the organic layer 116. For example, it is preferable to use wet etching with an aqueous solution of tetramethylammonium hydroxide (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof.

[0208] Alternatively, an organic material may be used in either or both of the insulating film 125f and the sacrificial layer 145. For example, as the organic material, a material that can be dissolved in a chemically stable solvent may be used for at least the film located at the top of the light-emitting layer. In particular, it is preferable to remove it by dissolving it in a solvent such as water or alcohol. Here, various alcohols can be used as the alcohol that can dissolve the insulating film 125f and the sacrificial layer 145, such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0209] After removing the insulating film 125f and the sacrificial layer 145, it is preferable to perform a drying treatment to remove water contained inside organic layers 115, 112, 155, and 116, as well as water adsorbed on the surface. For example, it is preferable to perform a heat treatment under an inert gas atmosphere or a reduced pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50°C to 200°C, preferably 60°C to 150°C, and more preferably 70°C to 120°C. A reduced pressure atmosphere is preferable because it allows drying at a lower temperature.

[0210] By removing the insulating film 125f and the sacrificial layer 145, the upper surface of the connecting electrode 111C is exposed.

[0211] [Formation of organic layer 114] Next, the organic layer 114 is formed by covering the organic layer 116, the insulating layer 125, the sacrificial layer 145, and the resin layer 126, etc.

[0212] The organic layer 114 can be formed using the same method as the organic layer 115. When forming the organic layer 114 by vapor deposition, a shielding mask may be used to prevent the organic layer 114 from being formed on the connecting electrode 111C.

[0213] [Formation of common electrode 113] Next, the common electrode 113 is formed by covering the organic layer 114.

[0214] The common electrode 113 can be formed by a film deposition method such as vapor deposition or sputtering. Alternatively, a film formed by vapor deposition and a film formed by sputtering may be laminated together.

[0215] It is preferable to form the common electrode 113 so as to encompass the region where the organic layer 114 is formed. That is, the edges of the organic layer 114 can overlap with the common electrode 113. The common electrode 113 may also be formed using a shielding mask.

[0216] In the connection portion 130, for example, as shown in Figure 1D, an organic layer 114 is sandwiched between the connecting electrode 111C and the common electrode 113. In this case, it is preferable to use a material with the lowest possible electrical resistance for the organic layer 114. Alternatively, it is preferable to reduce the electrical resistance in the thickness direction of the organic layer 114 by forming it as thin as possible. For example, by using an electron-injection or hole-injection material with a thickness of 1 nm to 5 nm, preferably 1 nm to 3 nm, for the organic layer 114, the electrical resistance between the connecting electrode 111C and the common electrode 113 can be reduced to a negligible degree.

[0217] Alternatively, the organic layer 114 may not be provided between the connecting electrode 111C and the common electrode 113. In such a configuration, since the connecting electrode 111C and the common electrode 113 are in contact, the contact resistance between them can be made extremely small, thereby reducing power consumption.

[0218] [Formation of a protective layer] Next, a protective layer 121 is formed on the common electrode 113 (Figure 6E). For depositing the inorganic insulating film used in the protective layer 121, sputtering, PECVD, or ALD methods are preferred. The ALD method is particularly preferred because it offers excellent step coverage and is less prone to defects such as pinholes. Furthermore, for depositing the organic insulating film, the inkjet method is preferred because it allows for the formation of a uniform film in the desired area.

[0219] Based on the above, the display devices shown in Figures 1A to 1C can be manufactured.

[0220] In the above example, the resin layer 126 is formed so that its width matches that of the slit 120, but the resin layer 126 may be formed so that its width is greater than the width of the slit 120.

[0221] Figure 7A is a schematic cross-sectional view of the resin layer 126 after the insulating film 125f has been formed.

[0222] Next, the insulating film 125f and the sacrificial layer 145 are etched in the same manner as described above. At this time, the portion of the sacrificial layer 145 that is covered by the resin layer 126 remains as a fragment of the sacrificial layer 145.

[0223] Next, by forming the organic layer 114, the common electrode 113, and the protective layer 121 in the same manner as described above, a display device as shown in Figure 7B can be manufactured.

[0224] Furthermore, by forming a resin layer 126 wider than the slit 120 and then etching the upper part of the resin layer 126 by ashing or the like, the resin layer 126 can be formed only inside the slit 120. In this case, it is preferable to bring the upper surface of the resin layer 126 as close as possible to the height of the upper surface of the adjacent organic layer 116. This reduces the step difference at both ends of the overlapping portion with the slit 120, and improves the step coverage of the organic layer 114, etc.

[0225] [Example of manufacturing method 2] Figures 5A to 6E show an example in which the organic layer 112W is formed first, followed by the organic layer 155; however, the formation order is not limited to this. An example in which the organic layer 155 is formed first, followed by the organic layer 112W, is shown using Figures 8A to 8D.

[0226] First, pixel electrodes 111a, 111b, 111c, and 111S are formed on layer 101.

[0227] Next, an organic layer 115 is formed to cover the pixel electrodes 111a, 111b, 111c, and 111S.

[0228] Next, an organic layer 155 is deposited on the organic layer 115. The organic layer 155 is formed using FMM151S so as to overlap with the pixel electrode 111S (Figure 8A). In Figure 8A, the organic layer 155 extends beyond the pixel electrode 111S and is also formed on the adjacent pixel electrode 111b.

[0229] Next, an organic layer 112W is deposited using FMM151W (Figure 8B). In Figure 8B, the organic layer 112W extends beyond the opening of FMM151W and is also formed on the organic layer 155. As a result, a portion of the organic layer 112W is laminated on the organic layer 155.

[0230] Next, sacrificial layers 147 and 145 are prepared, and organic layers 116, 112W, 155, and a portion of organic layer 115 that are not covered by sacrificial layer 145 are removed by etching to form a slit 120 (Figure 8C).

[0231] Next, the sacrificial layer 147 is removed, exposing the upper surface of the sacrificial layer 145. Then, an insulating film 125f is formed covering the sacrificial layer 145 and the slit 120. Next, a resin layer 126 is formed in the region overlapping with the slit 120. Then, the portions of the insulating film 125f and the sacrificial layer 145 not covered by the resin layer 126 are removed by etching, exposing the upper surface of the organic layer 116. Next, the organic layer 114, the common electrode 113, and the protective layer 121 are formed, and the display device shown in Figure 8D can be manufactured.

[0232] The above is an explanation of an example of a method for manufacturing a display device.

[0233] [Configuration Example 2] The following describes further configuration examples of a display device according to one aspect of the present invention.

[0234] Figure 9A is a schematic cross-sectional view of the display device. Figure 9A shows the cross-section in which the light-emitting element 140a, the light-receiving element 140S, the light-emitting element 140c, and the light-receiving element 140S are arranged in this order, as well as the cross-section of the region including the connection part 130. In Figure 9A, the first light-receiving element 140S is represented as light-receiving element 140S1, and the second light-receiving element 140S is represented as light-receiving element 140S2. Figure 9B is a schematic cross-sectional view of the slit 120 located between the light-emitting element 140a and the light-receiving element 140S1 and its vicinity, magnified.

[0235] The light-emitting element 140c has a pixel electrode 111c, an organic layer 115, an organic layer 112c, an organic layer 116, an organic layer 114, and a common electrode 113. In addition, in Figure 9A, layer 135B, which is a part (fragment) of the organic layer 112c separated by the slit 120, is provided near the photodetector 140S1 and near the photodetector 140S2.

[0236] Below the pixel electrode 111, a conductive layer 161, a conductive layer 162, and a resin layer 163 are provided.

[0237] The conductive layer 161 is provided on the insulating layer 105. The conductive layer 161 has a portion that penetrates the insulating layer 105 at an opening provided in the insulating layer 105. The conductive layer 161 functions as a wiring or electrode that electrically connects the pixel electrode 111 to wiring, transistors, or electrodes (not shown) located below the insulating layer 105.

[0238] The conductive layer 161 has a recess formed in the portion located at the opening of the insulating layer 105. The resin layer 163 is provided to fill this recess and functions as a planarizing film. The upper surface of the resin layer 163 is preferably flat, but the surface may have a gently curved shape. Figure 6A and others show an example in which the upper surface of the resin layer 163 has a wave-like shape with recesses and convex portions, but it is not limited to this. For example, the upper surface of the resin layer 163 may be convex, concave, or flat.

[0239] A conductive layer 162 is provided on the conductive layer 161 and the resin layer 163. The conductive layer 162 functions as an electrode that electrically connects the conductive layer 161 and the pixel electrode 111.

[0240] Here, if the light-emitting element 140 is an upward-extrusion type light-emitting element, the conductive layer 162 can be made to function as a reflective electrode by using a film that is reflective to visible light as the conductive layer 162 and a film that is transparent to visible light as the pixel electrode 111. Furthermore, the conductive layer 162 and the pixel electrode 111 can also be provided above the opening (also called the contact portion) of the insulating layer 105 via the resin layer 163, thus creating a light-emitting region. Therefore, the aperture ratio can be increased.

[0241] Similarly, when the light-receiving element 140S is used as a photoelectric conversion element that receives light from above, a reflective film can be used on the conductive layer 162 and a translucent film on the pixel electrode 111. Furthermore, the contact area can also function as a light-receiving region, thereby increasing the light-receiving area and improving light-receiving sensitivity.

[0242] Furthermore, the thickness of each pixel electrode 111 may be varied. In this case, the pixel electrode 111 can be used as an optical adjustment layer for the microcavity. When using a microcavity, a film having transparency and reflectivity is used as a common electrode.

[0243] Figures 9A and 9B show examples where the shape of the resin layer 126 differs from that described above.

[0244] As shown in FIG. 9B, the upper part of the resin layer 126 has a shape wider than the slit 120. As will be described later, since the insulating layer 125 is processed using the resin layer 126 as an etching mask, a portion covered by the upper part of the resin layer 126 remains. Further, a part of the sacrificial layer 145 used in the manufacturing process of the display device also remains for the same reason. Specifically, in the vicinity of the slit 120, the sacrificial layer 145 is provided on the organic layer 116. Also, a part of the insulating layer 125 is provided covering the upper surface of the sacrificial layer 145. Further, the resin layer 126 is provided covering the sacrificial layer 145 and the insulating layer 125.

[0245] At this time, it is preferable that the end of the insulating layer 125 and the end of the sacrificial layer 145 each have a tapered shape. Thereby, the step coverage of the organic layer 114 or the like can be improved.

[0246] As shown in FIGS. 9A and 9B, the layer 135R, the layer 135B, and the layer 135S each contact the insulating layer 125 and have a region overlapping the insulating layer 125, the sacrificial layer 145, and the resin layer 126. Also, the layer 135R, the layer 135B, and the layer 135S each have a portion overlapping the pixel electrode of an adjacent light-emitting element or light-receiving element.

[0247] This embodiment can be implemented by appropriately combining at least a part thereof with other embodiments described in this specification.

[0248] (Embodiment 2) In this embodiment, a configuration example of a display device according to an aspect of the present invention will be described. Here, it will be described as a display device capable of displaying an image, but by using a light-emitting element as a light source, it can be used as a display device.

[0249] In addition, the display device of the present embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment can be used, for example, in electronic devices having a relatively large screen such as a television device, a desktop or notebook personal computer, a monitor for a computer, digital signage, a large game machine such as a pachinko machine, etc., and can also be used for the display unit of a digital camera, a digital video camera, a digital photo frame, a mobile phone, a portable game machine, a smartphone, a wristwatch-type terminal, a tablet terminal, a personal digital assistant, and an audio playback device.

[0250] [Display device 400] FIG. 10 shows a perspective view of the display device 400, and FIG. 11A shows a cross-sectional view of the display device 400.

[0251] The display device 400 has a configuration in which a substrate 452 and a substrate 451 are bonded together. In FIG. 10, the substrate 452 is indicated by a broken line.

[0252] The display device 400 includes a display unit 462, a circuit 464, a wiring 465, etc. FIG. 10 shows an example in which an IC 473 and an FPC 472 are mounted on the display device 400. Therefore, the configuration shown in FIG. 11 can also be referred to as a display module having a display device 400, an IC (integrated circuit), and an FPC.

[0253] As the circuit 464, for example, a scanning line driving circuit can be used.

[0254] The wiring 465 has a function of supplying signals and power to the display unit 462 and the circuit 464. The signals and power are input to the wiring 465 from the outside via the FPC 472 or input to the wiring 465 from the IC 473.

[0255] Figure 10 shows an example in which IC 473 is mounted on the substrate 451 using a COG (Chip On Glass) method or COF (Chip On Film) method. IC 473 can be an IC having, for example, a scan line drive circuit or a signal line drive circuit. Note that the display device 400 and the display module may be configured without an IC. Alternatively, the IC may be mounted on an FPC using a COF method or the like.

[0256] Figure 11A shows an example of a cross-section of the display device 400 when a portion of the area including the FPC 472, a portion of the circuit 464, a portion of the display unit 462, and a portion of the area including the connection portion are cut. In Figure 11A, an example of a cross-section is shown when a portion of the display unit 462 is cut, specifically when a portion including the light-emitting element 430b that emits green light (G) and the light-receiving element 440 that receives reflected light (L) is cut.

[0257] The display device 400 shown in Figure 11A has transistors 242, 260, 258, light-emitting element 430b, and light-receiving element 440, etc., between substrates 453 and 454.

[0258] The light-emitting element 430b and the light-receiving element 440 can be the light-emitting element or light-receiving element exemplified above.

[0259] Here, if the pixels of the display device have three types of subpixels that emit light-emitting elements of different colors, examples of such three subpixels include subpixels of three colors: red (R), green (G), and blue (B); and subpixels of three colors: yellow (Y), cyan (C), and magenta (M). If there are four such subpixels, examples of such four subpixels include subpixels of four colors: R, G, B, and white (W); and subpixels of four colors: R, G, B, and Y. Alternatively, the subpixels may be equipped with light-emitting elements that emit infrared light.

[0260] Furthermore, the photodetector 440 can be a photoelectric converter that is sensitive to light in the red, green, or blue wavelength range, or a photoelectric converter that is sensitive to light in the infrared wavelength range.

[0261] The substrate 454 and the protective layer 416 are bonded together via an adhesive layer 442. The adhesive layer 442 is provided in superimposed on the light-emitting element 430b and the light-receiving element 440, and a solid encapsulation structure is applied to the display device 400. The substrate 454 is provided with a colored layer 418 and a light-shielding layer 417.

[0262] The light-emitting element 430b and the light-receiving element 440 have conductive layers 411a, 411b, and 411c as pixel electrodes. Conductive layer 411b is reflective to visible light and functions as a reflective electrode. Conductive layer 411c is transparent to visible light and functions as an optical adjustment layer.

[0263] The conductive layer 411a of the light-emitting element 430b is connected to the conductive layer 272b of the transistor 260 through an opening provided in the insulating layer 294. The transistor 260 has the function of controlling the driving of the light-emitting element. On the other hand, the conductive layer 411a of the photodetector element 440 is electrically connected to the conductive layer 272b of the transistor 258. The transistor 258 has the function of controlling the exposure timing using the photodetector element 440.

[0264] An EL layer 412b or a PD layer 412S is provided covering the pixel electrodes. An insulating layer 421 is provided in contact with the side surfaces of the EL layer 412b and the PD layer 412S, and a resin layer 422 is provided to fill the recesses of the insulating layer 421. An organic layer 414, a common electrode 413, and a protective layer 416 are provided covering the EL layer 412b and the PD layer 412S. By providing a protective layer 416 covering the light-emitting element, it is possible to suppress the ingress of impurities such as water into the light-emitting element and improve the reliability of the light-emitting element.

[0265] Furthermore, layers 415b and 415S are provided in contact with the insulating layer 421. Layer 415b contains the same material as the EL layer 412b, and layer 415S contains the same material as the PD layer 412S.

[0266] A part of layer 415b has a portion covering the ends of the conductive layers 411a, 411b, and 411c of the light-receiving element 440, and a portion overlapping with the PD layer 412S and the conductive layer 411c. A part of layer 415S has a portion covering the ends of the conductive layers 411a, 411b, and 411c of the light-emitting element 430b, and a portion overlapping with the EL layer 412b and the conductive layer 411c.

[0267] The light emitted by the light-emitting element 430b passes through the coloring layer 418 and is emitted toward the substrate 452 side as light G. The light-receiving element 440 receives the light L incident through the substrate 452 and converts it into an electrical signal. It is preferable to use a material with high transparency to visible light for the substrate 452.

[0268] The transistor 242, the transistor 260, and the transistor 258 are all formed on the substrate 451. These transistors can be fabricated by the same material and the same process.

[0269] Note that the transistor 242, the transistor 260, and the transistor 258 may be made separately so as to have different configurations. For example, transistors with different presence or absence of a back gate may be made separately, or transistors with different materials or thicknesses, either one or both, for the semiconductor, gate electrode, gate insulating layer, source electrode, and drain electrode may be made separately.

[0270] The substrate 453 and the insulating layer 262 are bonded together by an adhesive layer 455.

[0271] As a method for manufacturing the display device 400, first, a manufacturing substrate provided with the insulating layer 262, each transistor, each light-emitting element, the light-receiving element, etc., and a substrate 454 provided with the light-shielding layer 417 and the coloring layer 418 are bonded together by an adhesive layer 442. Then, by attaching the substrate 453 to the exposed surface after peeling off the manufacturing substrate, each component formed on the manufacturing substrate is transferred to the substrate 453. The substrate 453 and the substrate 454 preferably each have flexibility. Thereby, the flexibility of the display device 400 can be enhanced.

[0272] A connection portion 244 is provided in the region of substrate 453 that does not overlap with substrate 454. At the connection portion 244, wiring 465 is electrically connected to FPC 472 via a conductive layer 466 and a connecting layer 292. The conductive layer 466 can be obtained by processing the same conductive film as the pixel electrode. This allows the connection portion 244 and FPC 472 to be electrically connected via the connecting layer 292.

[0273] Transistors 242, 260, and 258 each have a conductive layer 471 that functions as a gate, an insulating layer 261 that functions as a gate insulating layer, a semiconductor layer 281 having a channel forming region 281i and a pair of low-resistance regions 281n, a conductive layer 272a connected to one of the pair of low-resistance regions 281n, a conductive layer 272b connected to the other of the pair of low-resistance regions 281n, an insulating layer 275 that functions as a gate insulating layer, a conductive layer 273 that functions as a gate, and an insulating layer 265 covering the conductive layer 273. The insulating layer 261 is located between the conductive layer 471 and the channel forming region 281i. The insulating layer 275 is located between the conductive layer 273 and the channel forming region 281i.

[0274] The conductive layer 272a and the conductive layer 272b are each connected to the low-resistance region 281n via openings provided in the insulating layer 265. Of the conductive layer 272a and the conductive layer 272b, one functions as a source and the other functions as a drain.

[0275] Figure 11A shows an example in which the insulating layer 275 covers the top and sides of the semiconductor layer. The conductive layer 272a and conductive layer 272b are connected to the low-resistance region 281n through openings provided in the insulating layer 275 and insulating layer 265, respectively.

[0276] On the other hand, in the transistor 259 shown in Figure 11B, the insulating layer 275 overlaps with the channel formation region 281i of the semiconductor layer 281, but does not overlap with the low-resistance region 281n. For example, the structure shown in Figure 11B can be fabricated by processing the insulating layer 275 using the conductive layer 273 as a mask. In Figure 11B, an insulating layer 265 is provided covering the insulating layer 275 and the conductive layer 273, and the conductive layers 272a and 272b are connected to the low-resistance region 281n, respectively, through openings in the insulating layer 265. Furthermore, an insulating layer 268 covering the transistor may also be provided.

[0277] The transistor structure of the display device of this embodiment is not particularly limited. For example, planar transistors, staggered transistors, inverse staggered transistors, etc., can be used. Furthermore, either a top-gate or bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0278] Transistors 242, 260, and 258 are configured in which a semiconductor layer on which a channel is formed is sandwiched between two gates. The transistors may be driven by connecting the two gates and supplying them with the same signal. Alternatively, the threshold voltage of the transistors may be controlled by applying a potential to control the threshold voltage to one of the two gates and a potential to drive the other gate.

[0279] The crystallinity of the semiconductor material used in the semiconductor layer of the transistor is not particularly limited; amorphous semiconductors, single-crystal semiconductors, or semiconductors with crystalline properties other than single crystals (microcrystalline semiconductors, polycrystalline semiconductors, or semiconductors having crystalline regions in part) may be used. Using a single-crystal semiconductor or a semiconductor with crystalline properties is preferable because it can suppress the degradation of transistor characteristics.

[0280] The semiconductor layer of the transistor preferably has a metal oxide (also called an oxide semiconductor). In other words, the display device of this embodiment preferably uses a transistor (hereinafter referred to as an OS transistor) that uses a metal oxide in the channel formation region.

[0281] The band gap of the metal oxide used in the semiconductor layer of the transistor is preferably 2 eV or more, and more preferably 2.5 eV or more. By using a metal oxide with a large band gap, the off-current of the OS transistor can be reduced.

[0282] The metal oxide preferably contains at least indium or zinc, and more preferably indium and zinc. For example, the metal oxide preferably contains indium, M (where M is one or more selected from gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc. In particular, M is preferably one or more selected from gallium, aluminum, yttrium, and tin, and gallium is more preferred. The metal oxide containing indium, M, and zinc may hereafter be referred to as In-M-Zn oxide.

[0283] When the metal oxide is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide is equal to or greater than the atomic ratio of M. Examples of such In-M-Zn oxide atomic ratios of metal elements include compositions where In:M:Zn=1:1:1 or close to it, In:M:Zn=1:1:1.2 or close to it, In:M:Zn=2:1:3 or close to it, In:M:Zn=3:1:2 or close to it, In:M:Zn=4:2:3 or close to it, In:M:Zn=4:2:4.1 or close to it, In:M:Zn=5:1:3 or close to it, In:M:Zn=5:1:6 or close to it, In:M:Zn=5:1:7 or close to it, In:M:Zn=5:1:8 or close to it, In:M:Zn=6:1:6 or close to it, In:M:Zn=5:2:5 or close to it, and so on. Note that "close to it" compositions include a range of ±30% of the desired atomic ratio. By increasing the atomic ratio of indium in a metal oxide, the on-current or field-effect mobility of a transistor can be increased.

[0284] For example, when describing a composition with an atomic ratio of In:Ga:Zn = 4:2:3 or a similar ratio, it includes cases where, when the atomic ratio of In is 4, the atomic ratio of Ga is between 1 and 3, and the atomic ratio of Zn is between 2 and 4. Also, when describing a composition with an atomic ratio of In:Ga:Zn = 5:1:6 or a similar ratio, it includes cases where, when the atomic ratio of In is 5, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is between 5 and 7. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn = 1:1:1 or a similar ratio, it includes cases where, when the atomic ratio of In is 1, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0285] Furthermore, the atomic ratio of In in an In-M-Zn oxide may be less than the atomic ratio of M. Examples of such atomic ratios of metal elements in an In-M-Zn oxide include compositions where In:M:Zn = 1:3:2 or close to it, In:M:Zn = 1:3:3 or close to it, In:M:Zn = 1:3:4 or close to it, etc. By increasing the atomic ratio of M in the metal oxide, it is possible to increase the band gap of the In-M-Zn oxide and improve its resistance to photonegative bias stress testing. Specifically, it is possible to reduce the change in threshold voltage or the change in shift voltage (Vsh) measured in the NBTIS (Negative Bias Temperature Illumination Stress) test of a transistor. Note that the shift voltage (Vsh) is defined as the Vg at which the tangent line at the point where the slope of the drain current (Id)-gate voltage (Vg) curve is maximum intersects the straight line where Id = 1 pA.

[0286] Alternatively, the semiconductor layer of the transistor may contain silicon. Examples of silicon include amorphous silicon and crystalline silicon (such as low-temperature polysilicon (also known as LTPS) and single-crystal silicon).

[0287] Low-temperature polysilicon, in particular, has relatively high mobility and can be formed on a glass substrate, making it suitable for use in display devices. For example, transistors using low-temperature polysilicon as the semiconductor layer (LTPS transistors) can be applied to transistors 242 in the drive circuit, while transistors using oxide semiconductors as the semiconductor layer (OS transistors) can be applied to transistors 260 and 258 provided in the pixels. By using both LTPS transistors and OS transistors, a display device with low power consumption and high driving capability can be realized. Furthermore, a configuration combining LTPS transistors and OS transistors is sometimes referred to as LTPO. In addition, a more preferable example is to apply OS transistors to transistors that function as switches to control conduction and non-conductivity between wiring, and to apply LTPS transistors to transistors that control current.

[0288] Alternatively, the semiconductor layer of a transistor may have a layered material that functions as a semiconductor. A layered material is a general term for a group of materials having a layered crystalline structure. A layered crystalline structure is a structure in which layers formed by covalent or ionic bonds are stacked via weaker bonds than covalent or ionic bonds, such as van der Waals forces. Layered materials have high electrical conductivity within a unit layer, that is, high two-dimensional electrical conductivity. By using a material that functions as a semiconductor and has high two-dimensional electrical conductivity in the channel formation region, a transistor with a large on-current can be provided.

[0289] Examples of the above-mentioned layered materials include graphene, silicene, and chalcogenides. Chalcogenides are compounds containing chalcogens (elements belonging to Group 16). Examples of chalcogenides include transition metal chalcogenides and Group 13 chalcogenides. Specific examples of transition metal chalcogenides applicable as semiconductor layers in transistors include molybdenum sulfide (typically MoS2), molybdenum selenide (typically MoSe2), molybdenum tellurium (typically MoTe2), tungsten sulfide (typically WS2), tungsten selenide (typically WSe2), tungsten tellurium (typically WTe2), hafnium sulfide (typically HfS2), hafnium selenide (typically HfSe2), zirconium sulfide (typically ZrS2), and zirconium selenide (typically ZrSe2).

[0290] The display device shown in Figure 11A has an OS transistor and a configuration in which the common layer between light-emitting elements is separated. This configuration makes it possible to extremely low the leakage current that can flow through the transistor and the leakage current that can flow between adjacent light-emitting elements (also called lateral leakage current or side leakage current). Furthermore, with this configuration, when an image is displayed on the display device, the observer can observe one or more of the following: image sharpness, image clarity, high saturation, and high contrast ratio. Moreover, by having an extremely low leakage current that can flow through the transistor and lateral leakage current between light-emitting elements, it is possible to achieve a display (also called true black display) with as little light leakage (so-called black floating) that can occur when displaying black as possible.

[0291] In particular, by applying a color-coded structure (SBS structure) to light-emitting elements with an MML structure, the layers provided between the light-emitting elements (for example, an organic layer used in common between light-emitting elements, also called a common layer) are separated, resulting in a display with no side leakage or extremely low side leakage.

[0292] The transistors in circuit 464 and the transistors in display unit 462 may have the same structure or different structures. The structures of the multiple transistors in circuit 464 may all be the same or there may be two or more different structures. Similarly, the structures of the multiple transistors in display unit 462 may all be the same or there may be two or more different structures.

[0293] It is preferable to use a material that does not easily allow impurities such as water and hydrogen to diffuse into at least one layer of the insulating layer covering the transistor. This allows the insulating layer to function as a barrier layer. With such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby improving the reliability of the display device.

[0294] It is preferable to use an inorganic insulating film for insulating layer 261, insulating layer 262, insulating layer 265, insulating layer 268, and insulating layer 275. Examples of inorganic insulating films that can be used include silicon nitride film, silicon oxynitride film, silicon oxide film, silicon nitride film, aluminum oxide film, and aluminum nitride film. Alternatively, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film may also be used. Furthermore, two or more of the above-mentioned inorganic insulating films may be laminated together.

[0295] Here, organic insulating films often have lower barrier properties than inorganic insulating films. Therefore, it is preferable that the organic insulating film has an opening near the edge of the display device 400. This prevents impurities from entering through the organic insulating film from the edge of the display device 400. Alternatively, the organic insulating film may be formed so that its edge is inside the edge of the display device 400, so that the organic insulating film is not exposed at the edge of the display device 400.

[0296] An organic insulating film is preferred for the insulating layer 294, which functions as a planarizing layer. Examples of materials that can be used as the organic insulating film include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimidoamide resins, siloxane resins, benzocyclobutene resins, phenolic resins, and precursors of these resins.

[0297] It is preferable to provide a light-shielding layer 417 on the surface of the substrate 454 that faces the substrate 453. Various optical components can also be placed on the outside of the substrate 454. Examples of optical components include polarizing plates, phase difference plates, light diffusion layers (such as diffusion films), anti-reflective layers, and light-collecting films. Furthermore, an antistatic film to suppress the adhesion of dust, a water-repellent film to make it difficult for dirt to adhere, a hard coat film to suppress the occurrence of scratches during use, and an impact-absorbing layer may also be placed on the outside of the substrate 454.

[0298] Figure 11A shows the connection section 278. At the connection section 278, the common electrode 413 and the wiring are electrically connected. Figure 11A shows an example where the same stacked structure as the pixel electrode is applied to the wiring.

[0299] Substrates 453 and 454 can be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, etc., respectively. The substrate on the side that extracts light from the light-emitting element should be made of a material that transmits the light. Using flexible materials for substrates 453 and 454 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used as substrate 453 or substrate 454.

[0300] Substrates 453 and 454 can be made from polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. One or both of substrates 453 and 454 may be made of glass of a thickness sufficient to provide flexibility.

[0301] Furthermore, when a circular polarizing plate is superimposed on a display device, it is preferable to use a substrate with high optical isotropy for the substrate of the display device. A substrate with high optical isotropy has low birefringence (or a small amount of birefringence).

[0302] For substrates with high optical isotropy, the absolute value of the retardation (phase difference) is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0303] Examples of films with high optical isotropy include triacetylcellulose (TAC, also known as cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic film.

[0304] Furthermore, when using a film as the substrate, the film may absorb water, potentially causing wrinkles or other shape changes in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferable to use a film with a water absorption rate of 0.1% or less, and even more preferable to use a film with a water absorption rate of 0.01% or less.

[0305] Various types of curing adhesives can be used as the adhesive layer, including UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Adhesive sheets may also be used.

[0306] As the connecting layer 292, an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), etc., can be used.

[0307] Materials that can be used for conductive layers such as the gate, source, and drain of transistors, as well as various wirings and electrodes that constitute display devices, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, as well as alloys mainly composed of these metals. Films containing these materials can be used as single layers or in a multilayer structure.

[0308] Furthermore, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene can be used as the light-transmitting conductive material. Alternatively, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metallic materials, can be used. Alternatively, nitrides of such metallic materials (e.g., titanium nitride) may be used. When using metallic materials or alloy materials (or their nitrides), it is preferable to make them thin enough to be light-transmitting. In addition, a laminated film of the above materials can be used as a conductive layer. For example, using a laminated film of a silver-magnesium alloy and indium tin oxide is preferable because it can enhance conductivity. These can also be used for conductive layers of various wirings and electrodes that constitute a display device, and for conductive layers of light-emitting elements (conductive layers that function as pixel electrodes or common electrodes).

[0309] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, and aluminum oxide.

[0310] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., can be appropriately combined with other configuration examples or drawings, etc., at least in part.

[0311] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0312] (Embodiment 3) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 12 to 17.

[0313] The display device of this embodiment can be a high-definition display device. Therefore, the display device of this embodiment can be used in the display section of wearable devices that can be worn on the head, such as information terminals (wearable devices) such as wristwatches and bracelets, as well as VR devices such as head-mounted displays and AR devices such as glasses.

[0314] [Display Module] Figure 12A shows a perspective view of the display module 280. The display module 280 includes a display device 100C and an FPC 290. Note that the display device included in the display module 280 is not limited to the display device 100C, but may be any of the display devices 100D to 100G described later.

[0315] The display module 280 has substrates 291 and 293. The display module 280 has a display section 288. The display section 288 is an area in the display module 280 that displays an image, and is an area in which light from each pixel provided in the pixel section 284, which will be described later, can be seen.

[0316] Figure 12B shows a schematic perspective view illustrating the configuration of the substrate 291. On the substrate 291, a circuit section 282, a pixel circuit section 283 on the circuit section 282, and a pixel section 284 on the pixel circuit section 283 are stacked. In addition, a terminal section 285 for connecting to the FPC 290 is provided in the portion of the substrate 291 that does not overlap with the pixel section 284. The terminal section 285 and the circuit section 282 are electrically connected by a wiring section 286, which is composed of multiple wires.

[0317] The pixel section 284 has a plurality of periodically arranged pixels 284a. A magnified view of one pixel 284a is shown on the right side of Figure 12B. Pixel 284a has sub-pixels 110a, 110b, and 110c. The configuration of sub-pixels 110a, 110b, and 110c and their surroundings can be referenced from the previous embodiment. The plurality of sub-pixels can be arranged in a stripe arrangement as shown in Figure 12B. In addition, various arrangement methods for light-emitting elements, such as a delta arrangement or a pentile arrangement, can be applied.

[0318] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0319] A single pixel circuit 283a is a circuit that controls the light emission of the three light-emitting elements of a single pixel 284a. A single pixel circuit 283a may be configured to have three circuits that control the light emission of a single light-emitting element. For example, a single pixel circuit 283a may have at least one selection transistor, one current control transistor (drive transistor), and a capacitive element for each light-emitting element. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to either the source or the drain. This realizes an active-matrix type display device.

[0320] The circuit section 282 has circuits for driving each pixel circuit 283a of the pixel circuit section 283. For example, it is preferable to have one or both of a gate line drive circuit and a source line drive circuit. In addition, it may have at least one of the following: an arithmetic circuit, a memory circuit, and a power supply circuit.

[0321] The FPC290 functions as wiring for supplying video signals or power potential, etc., to the circuit section 282 from an external source. An IC may also be mounted on the FPC290.

[0322] The display module 280 can be configured such that one or both of the pixel circuit section 283 and the circuit section 282 are stacked on the lower side of the pixel section 284, thereby enabling an extremely high aperture ratio (effective display area ratio) of the display section 288. For example, the aperture ratio of the display section 288 can be 40% or more and less than 100%, preferably 50% or more and 95%, and more preferably 60% or more and 95%. Furthermore, it is possible to arrange the pixels 284a at an extremely high density, enabling an extremely high resolution of the display section 288. For example, it is preferable that the pixels 284a in the display section 288 are arranged with a resolution of 20000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and with a resolution of 20000 ppi or less, or 30000 ppi or less.

[0323] Because such a display module 280 is extremely high-resolution, it can be suitably used in VR devices such as head-mounted displays, or in glasses-type AR devices. For example, even in a configuration where the display part of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display part 288, so even when the display part is magnified with lenses, pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices with relatively small display parts. For example, it can be suitably used in the display part of wearable electronic devices such as wristwatches.

[0324] [Display device 100C] The display device 100C shown in Figure 13 has a substrate 301, sub-pixels 110a, 110b, 110c, a capacitor 240, and a transistor 310. Sub-pixel 110a has an light-emitting element 140a and a colored layer 129a, sub-pixel 110b has an light-emitting element 140b and a colored layer 129b, and sub-pixel 110c has an light-emitting element 140c and a colored layer 129c.

[0325] Substrate 301 corresponds to substrate 291 in Figures 12A and 12B. The laminated structure from substrate 301 to insulating layer 255b corresponds to layer 101 containing the transistors in Embodiment 1. Figure 13 shows the four transistors 310 located in layer 101.

[0326] The transistor 310 is a transistor having a channel-forming region in the substrate 301. The substrate 301 can be a semiconductor substrate such as a single-crystal silicon substrate. The transistor 310 comprises a portion of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region of the substrate 301 doped with impurities and functions as either a source or a drain. The insulating layer 314 covers the side surface of the conductive layer 311 and functions as an insulating layer.

[0327] Furthermore, an element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301.

[0328] Furthermore, an insulating layer 261 is provided covering the transistor 310, and a capacitance 240 is provided on the insulating layer 261.

[0329] Capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located between them. The conductive layer 241 functions as one electrode of the capacitor 240, the conductive layer 245 functions as the other electrode of the capacitor 240, and the insulating layer 243 functions as the dielectric of the capacitor 240.

[0330] The conductive layer 241 is provided on the insulating layer 261 and embedded in the insulating layer 254. The conductive layer 241 is electrically connected to either the source or drain of the transistor 310 by a plug 271 embedded in the insulating layer 261. The insulating layer 243 is provided covering the conductive layer 241. The conductive layer 245 is provided in the region that overlaps with the conductive layer 241 via the insulating layer 243.

[0331] An insulating layer 255a is provided covering the capacitance 240, an insulating layer 255b is provided on the insulating layer 255a, and light-emitting elements 140a, 140b, 140c, etc. are provided on the insulating layer 255b. In this embodiment, an example is shown in which the laminated structure shown in Figure 1B is applied as the light-emitting elements 140a, 140b, 140c, the upper resin layer 122, the colored layers 129a, 129b, 129c, the black matrix 129d, and the substrate 128. The substrate 128 corresponds to the substrate 293 in Figure 12A.

[0332] Various inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride-oxide insulating films can be suitably used as insulating layers 255a and 255b, respectively. For insulating layer 255a, it is preferable to use an oxide insulating film or oxidative nitride insulating film such as a silicon oxide film, silicon oxidative nitride film, or aluminum oxide film. For insulating layer 255b, it is preferable to use a nitride insulating film or oxidative nitride insulating film such as a silicon nitride film or silicon nitride-oxide film. More specifically, it is preferable to use a silicon oxide film as insulating layer 255a and a silicon nitride film as insulating layer 255b. It is preferable that insulating layer 255b functions as an etching protective film. Alternatively, a nitride insulating film or nitride-oxide insulating film may be used as insulating layer 255a, and an oxide insulating film or oxidative nitride insulating film may be used as insulating layer 255b. In this embodiment, an example is shown in which a recess is provided in the insulating layer 255b, but the insulating layer 255b does not necessarily have to have a recess.

[0333] In Figure 13, the pixel electrodes of the light-emitting elements 140a, 140b, and 140c, and the pixel electrodes of the photodetector element 140S, are each electrically connected to different transistors 310. They are electrically connected to plugs embedded in the insulating layers 255a and 255b. The plugs embedded in the insulating layers 255a and 255b, for example, are electrically connected to either the source or drain of transistor 310 by a conductive layer embedded in insulating layer 254 and a plug embedded in insulating layer 261. In Figure 12, 256 embedded in insulating layers 255a and 255b is electrically connected to either the source or drain of transistor 310 by a conductive layer 241 embedded in insulating layer 254 and a plug 271 embedded in insulating layer 261. The height of the top surface of insulating layer 255b and the height of the top surface of plug 256 are equal or approximately equal. Various conductive materials can be used for the plugs.

[0334] [Display device 100D] The display device 100D shown in Figure 14 differs from the display device 100C mainly in its transistor configuration. Note that explanations of parts similar to those of the display device 100C may be omitted.

[0335] Transistor 320 is an OS transistor in which a metal oxide (also called an oxide semiconductor) is applied to the semiconductor layer where the channel is formed.

[0336] The transistor 320 has a semiconductor layer 321, an insulating layer 323, a conductive layer 324, a pair of conductive layers 325, an insulating layer 326, and a conductive layer 327.

[0337] Substrate 331 corresponds to substrate 291 in Figures 12A and 12B. The laminated structure from substrate 331 to insulating layer 255b corresponds to layer 101 containing the transistor in Embodiment 1. An insulating substrate or a semiconductor substrate can be used as substrate 331.

[0338] An insulating layer 332 is provided on the substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320, and prevents oxygen from detaching from the semiconductor layer 321 to the insulating layer 332. As the insulating layer 332, for example, a film that is less susceptible to hydrogen or oxygen diffusion than a silicon oxide film can be used, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film.

[0339] A conductive layer 327 is provided on an insulating layer 332, and an insulating layer 326 is provided covering the conductive layer 327. The conductive layer 327 functions as the first gate electrode of the transistor 320, and a portion of the insulating layer 326 functions as the first gate insulating layer. It is preferable to use an oxide insulating film, such as a silicon oxide film, for at least the portion of the insulating layer 326 that is in contact with the semiconductor layer 321. It is preferable that the upper surface of the insulating layer 326 is flattened.

[0340] The semiconductor layer 321 is provided on the insulating layer 326. Preferably, the semiconductor layer 321 has a metal oxide (also called an oxide semiconductor) film having semiconductor properties. Details of materials suitable for use in the semiconductor layer 321 will be described later.

[0341] A pair of conductive layers 325 are provided in contact with the semiconductor layer 321 and function as source and drain electrodes.

[0342] Furthermore, an insulating layer 328 is provided covering the top and side surfaces of the pair of conductive layers 325, as well as the side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided on the insulating layer 328. The insulating layer 328 functions as a barrier layer to prevent impurities such as water or hydrogen from diffusing into the semiconductor layer 321 from the insulating layer 264, etc., and to prevent oxygen from detaching from the semiconductor layer 321. As the insulating layer 328, an insulating film similar to that of the insulating layer 332 can be used.

[0343] An opening is provided in the insulating layer 328 and the insulating layer 264 that reaches the semiconductor layer 321. Inside this opening, the insulating layer 323 and the conductive layer 324 are embedded, in contact with the sides of the insulating layer 264, the insulating layer 328, and the conductive layer 325, as well as the upper surface of the semiconductor layer 321. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

[0344] The upper surfaces of the conductive layer 324, the insulating layer 323, and the insulating layer 264 are flattened so that their heights are the same or approximately the same, and the insulating layer 329 and insulating layer 265 are provided covering them.

[0345] Insulating layers 264 and 265 function as interlayer insulating layers. Insulating layer 329 functions as a barrier layer to prevent impurities such as water or hydrogen from diffusing into the transistor 320 from insulating layer 265, etc. As insulating layer 329, an insulating film similar to that used for insulating layers 328 and 332 can be used.

[0346] A plug 274, which is electrically connected to one of the pair of conductive layers 325, is provided so as to be embedded in the insulating layers 265, 329, and 264. Here, it is preferable that the plug 274 has a conductive layer 274a that covers the sides of the openings of the insulating layers 265, 329, 264, and 328, and a part of the upper surface of the conductive layer 325, and a conductive layer 274b that is in contact with the upper surface of the conductive layer 274a. In this case, it is preferable to use a conductive material that does not easily allow hydrogen and oxygen to diffuse as the conductive layer 274a.

[0347] The configuration of the display device 100D, from the insulating layer 254 to the substrate 128, is the same as that of the display device 100C.

[0348] [Display device 100E] The display device 100E shown in Figure 15 has a configuration in which a transistor 310 with a channel formed on a substrate 301 and a transistor 320 containing a metal oxide in the semiconductor layer where the channel is formed are stacked. Note that parts that are the same as those of display devices 100C and 100D may be omitted from the explanation.

[0349] An insulating layer 261 is provided covering the transistor 310, and a conductive layer 251 is provided on the insulating layer 261. An insulating layer 262 is provided covering the conductive layer 251, and a conductive layer 252 is provided on the insulating layer 262. The conductive layers 251 and 252 each function as wiring. An insulating layer 263 and an insulating layer 332 are provided covering the conductive layer 252, and a transistor 320 is provided on the insulating layer 332. An insulating layer 265 is provided covering the transistor 320, and a capacitor 240 is provided on the insulating layer 265. The capacitor 240 and the transistor 320 are electrically connected by a plug 274.

[0350] Transistor 320 can be used as a transistor constituting a pixel circuit. Transistor 310 can also be used as a transistor constituting a pixel circuit, or as a transistor constituting a drive circuit (gate line drive circuit, source line drive circuit) for driving the pixel circuit. Furthermore, transistors 310 and 320 can be used as transistors constituting various circuits such as arithmetic circuits or memory circuits.

[0351] This configuration allows for the formation of not only pixel circuits but also drive circuits and other components directly beneath the light-emitting element, making it possible to miniaturize the display device compared to cases where the drive circuits are located around the display area.

[0352] [Display device 100F] The display device 100F shown in Figure 16 has a configuration in which transistors 310A and 310B, each with a channel formed on a semiconductor substrate, are stacked.

[0353] The display device 100F has a configuration in which a substrate 301B on which transistor 310B, capacitor 240, and each light-emitting element are provided, and a substrate 301A on which transistor 310A is provided are bonded together.

[0354] Here, it is preferable to provide an insulating layer 345 on the underside of substrate 301B. It is also preferable to provide an insulating layer 346 on top of the insulating layer 261 provided on substrate 301A. Insulating layers 345 and 346 are insulating layers that function as protective layers and can suppress the diffusion of impurities into substrates 301B and 301A. As insulating layers 345 and 346, inorganic insulating films that can be used for protective layer 121 or insulating layer 332 can be used.

[0355] A plug 343 is provided on the substrate 301B, penetrating both the substrate 301B and the insulating layer 345. It is preferable to provide an insulating layer 344 covering the sides of the plug 343. The insulating layer 344 functions as a protective layer and can suppress the diffusion of impurities into the substrate 301B. As the insulating layer 344, an inorganic insulating film that can be used for the protective layer 121 or the insulating layer 332 can be used.

[0356] Furthermore, a conductive layer 342 is provided on the back side of the substrate 301B (the side opposite to the substrate 128 side), beneath the insulating layer 345. Preferably, the conductive layer 342 is provided so as to be embedded in the insulating layer 335. Also, preferably, the undersides of the conductive layer 342 and the insulating layer 335 are flattened. Here, the conductive layer 342 is electrically connected to the plug 343.

[0357] On the other hand, the substrate 301A has a conductive layer 341 provided on an insulating layer 346. Preferably, the conductive layer 341 is provided so as to be embedded in the insulating layer 336. Furthermore, it is preferable that the upper surfaces of the conductive layer 341 and the insulating layer 336 are flattened.

[0358] The conductive layer 341 and the conductive layer 342 are bonded together, thereby electrically connecting the substrate 301A and the substrate 301B. By improving the flatness of the surface formed by the conductive layer 342 and the insulating layer 335, and the surface formed by the conductive layer 341 and the insulating layer 336, the bonding of the conductive layer 341 and the conductive layer 342 can be improved.

[0359] It is preferable to use the same conductive material for conductive layer 341 and conductive layer 342. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film (titanium nitride film, molybdenum nitride film, tungsten nitride film) composed of the above elements can be used. In particular, it is preferable to use copper for conductive layer 341 and conductive layer 342. This makes it possible to apply Cu-Cu (copper-copper) direct bonding technology (a technology that achieves electrical conductivity by connecting Cu (copper) pads to each other).

[0360] [Display device 100G] Figure 16 shows an example in which Cu-Cu direct bonding technology is used to bond conductive layer 341 and conductive layer 342, but the present invention is not limited to this. As shown in Figure 17, in the display device 100G, conductive layer 341 and conductive layer 342 may be bonded via bump 347.

[0361] As shown in Figure 17, the conductive layer 341 and the conductive layer 342 can be electrically connected by providing a bump 347 between them. The bump 347 can be formed using a conductive material containing, for example, gold (Au), nickel (Ni), indium (In), or tin (Sn). Solder may also be used as the bump 347. An adhesive layer 348 may also be provided between the insulating layer 345 and the insulating layer 346. Furthermore, when the bump 347 is provided, the insulating layer 335 and the insulating layer 336 may be omitted.

[0362] This embodiment can be combined with other embodiments as appropriate.

[0363] (Embodiment 4) This embodiment describes a display device according to one aspect of the present invention.

[0364] A display device according to one aspect of the present invention has a light-receiving element (also called a light-receiving device) and a light-emitting element (also called a light-emitting device). Alternatively, a display device according to one aspect of the present invention may have a configuration that includes a light-receiving element (also called a light-receiving device) and a light-emitting element.

[0365] First, a display device having a light-receiving element and a light-emitting element will be described.

[0366] A display device according to one aspect of the present invention has a light-receiving unit with a light-receiving element and a light-emitting element. In this aspect of the display device, the light-emitting element is arranged in a matrix in the light-receiving unit, and the light-receiving unit can display an image. Furthermore, the light-receiving unit also has a light-receiving element arranged in a matrix, and the light-receiving unit has either an imaging function or a sensing function, or both. The light-receiving unit can be used as an image sensor, a touch sensor, etc. That is, by detecting light in the light-receiving unit, it is possible to capture an image or detect touch operations of an object (finger, pen, etc.). Moreover, in this aspect of the display device, the light-emitting element can be used as a light source for a sensor. Therefore, it is not necessary to provide a separate light-receiving unit and light source from the display device, and the number of components in the electronic device can be reduced.

[0367] In one embodiment of the present invention, when an object reflects (or scatters) the light emitted by the light-emitting element of the light-receiving unit, the light-receiving element can detect the reflected light (or scattered light), making it possible to perform tasks such as image capture and touch operation detection even in dark places.

[0368] A light-emitting element in a display device according to one aspect of the present invention functions as a display element (also called a display device).

[0369] As the light-emitting element, it is preferable to use an EL element (also called an EL device) such as an OLED or QLED. Examples of light-emitting materials for EL elements include fluorescent materials, phosphorescent materials, inorganic compounds (such as quantum dot materials), and thermally activated delayed fluorescence (TADF) materials. In addition, LEDs such as microLEDs can also be used as the light-emitting element.

[0370] A display device according to one aspect of the present invention has the function of detecting light using a light-receiving element.

[0371] When a light-receiving element is used as an image sensor, a display device can capture an image using the light-receiving element. For example, the display device can be used as a scanner.

[0372] An electronic device to which a display device according to one aspect of the present invention is applied can acquire data related to biometric information such as fingerprints and palm prints using its function as an image sensor. In other words, a biometric authentication sensor can be built into the display device. By having the biometric authentication sensor built into the display device, the number of components in the electronic device can be reduced compared to when a separate biometric authentication sensor is provided for the display device, making it possible to miniaturize and lighten the electronic device.

[0373] Furthermore, when a light-receiving element is used as a touch sensor, the display device can use the light-receiving element to detect touch operations on the object.

[0374] For example, a pn-type or pin-type photodiode can be used as the light-receiving element. The light-receiving element functions as a photoelectric conversion element (also called a photoelectric conversion device) that detects light incident on it and generates an electric charge. The amount of charge generated from the light-receiving element is determined by the amount of light incident on it.

[0375] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving element. Organic photodiodes can be easily made thinner, lighter, and larger in area, and because they offer a high degree of freedom in shape and design, they can be applied to a variety of devices.

[0376] In one aspect of the present invention, an organic EL element (also called an organic EL device) is used as a light-emitting element, and an organic photodiode is used as a light-receiving element. The organic EL element and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated into a display device using an organic EL element.

[0377] If all the layers constituting an organic EL element and an organic photodiode were to be fabricated separately, the number of film deposition steps would become enormous. However, since organic photodiodes have many layers that can share the same configuration as organic EL elements, the increase in film deposition steps can be suppressed by depositing these common layers in a single batch.

[0378] For example, one of a pair of electrodes (the common electrode) can be a common layer for both the photodetector and the light-emitting element. Alternatively, at least one of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer may be a common layer for both the photodetector and the light-emitting element. By having a common layer for both the photodetector and the light-emitting element in this way, the number of film deposition cycles and masks can be reduced, thereby reducing the manufacturing process and cost of the display device. Furthermore, a display device having a photodetector can be manufactured using existing manufacturing equipment and methods for display devices.

[0379] Next, a display device having a light-emitting / receiving element and a light-emitting element will be described. Note that explanations of functions, operations, and effects similar to those described above may be omitted.

[0380] In a display device according to one aspect of the present invention, subpixels exhibiting one of the colors have a light-receiving light-emitting element instead of a light-emitting element, while subpixels exhibiting other colors have a light-emitting element. The light-receiving light-emitting element has both a light-emitting function and a light-receiving function. For example, if a pixel has three subpixels, a red subpixel, a green subpixel, and a blue subpixel, at least one subpixel has a light-receiving light-emitting element, and the other subpixels have light-emitting elements. Therefore, the light-receiving and light-emitting section of the display device according to one aspect of the present invention has the function of displaying an image using both light-receiving and light-emitting elements and light-emitting elements.

[0381] By having the light-emitting element serve as both a light-emitting element and a light-receiving element, it is possible to add a light-receiving function to a pixel without increasing the number of subpixels included in the pixel. This makes it possible to add either or both an imaging function and a sensing function to the light-emitting section of a display device while maintaining the aperture ratio of the pixel (aperture ratio of each subpixel) and the resolution of the display device. Therefore, in one embodiment of the present invention, the aperture ratio of the pixel can be increased and high resolution can be easily achieved compared to a case in which subpixels having light-receiving elements are provided separately from subpixels having light-emitting elements.

[0382] In one embodiment of the present invention, a display device has a light-receiving unit in which light-receiving and light-emitting elements are arranged in a matrix, and an image can be displayed in the light-receiving unit. The light-receiving unit can also be used as an image sensor, a touch sensor, etc. In one embodiment of the present invention, the light-emitting elements can be used as a light source for a sensor. Therefore, imaging and detection of touch operations are possible even in dark places.

[0383] Light-emitting and receiving devices can be fabricated by combining organic EL elements and organic photodiodes. For example, a light-emitting and receiving device can be fabricated by adding an active layer of an organic photodiode to the stacked structure of an organic EL element. Furthermore, when fabricating a light-emitting and receiving device by combining an organic EL element and an organic photodiode, the number of film deposition steps can be suppressed by depositing layers that can share a common structure with the organic EL element in a single process.

[0384] For example, one of a pair of electrodes (the common electrode) can be a layer common to both the light-receiving and light-emitting elements. Alternatively, at least one of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer may be a layer common to both the light-receiving and light-emitting elements.

[0385] Furthermore, the function of the layers in a light-receiving element may differ depending on whether the element functions as a light-receiving element or as a light-emitting element. In this specification, the components are referred to based on their function when the element functions as a light-emitting element.

[0386] The display device of this embodiment has the function of displaying an image using a light-emitting element and a light-receiving element. In other words, the light-emitting element and the light-receiving element function as display elements.

[0387] The display device of this embodiment has the function of detecting light using a light-receiving element. The light-receiving element can detect light with a shorter wavelength than the light it emits itself.

[0388] When the light-emitting element is used as an image sensor, the display device of this embodiment can capture an image using the light-emitting element. Furthermore, when the light-emitting element is used as a touch sensor, the display device of this embodiment can detect touch operations on an object using the light-emitting element.

[0389] The light-receiving element functions as a photoelectric conversion element. The light-receiving element can be fabricated by adding an active layer of a light-receiving element to the configuration of the light-receiving element described above. For example, the active layer of a pn-type or pin-type photodiode can be used for the light-receiving element.

[0390] In particular, it is preferable to use an organic photodiode with an active layer containing an organic compound as the light-emitting and receiving element. Organic photodiodes can be easily made thinner, lighter, and larger in area, and because they offer a high degree of freedom in shape and design, they can be applied to a variety of devices.

[0391] In the following section, a display device, which is an example of a display device according to one aspect of the present invention, will be described in more detail with reference to the drawings.

[0392] [Example of display device configuration 1] [Configuration Example 1-1] Figure 18A shows a schematic diagram of the display panel 200. The display panel 200 includes a substrate 201, a substrate 202, a light-receiving element 212, a light-emitting element 211R, a light-emitting element 211G, a light-emitting element 211B, a functional layer 203, and the like.

[0393] The light-emitting elements 211R, 211G, 211B, and 212 are located between substrates 201 and 202. The light-emitting elements 211R, 211G, and 211B emit red (R), green (G), or blue (B) light, respectively. In the following, when light-emitting elements 211R, 211G, and 211B are not distinguished, they may be referred to simply as "light-emitting element 211."

[0394] The display panel 200 has a plurality of pixels arranged in a matrix. Each pixel has one or more subpixels. Each subpixel has one light-emitting element. For example, a pixel can have a configuration with three subpixels (three colors: R, G, B, or three colors: yellow (Y), cyan (C), and magenta (M)), or a configuration with four subpixels (four colors: R, G, B, and white (W), or four colors: R, G, B, and Y). Furthermore, each pixel has a light-receiving element 212. The light-receiving element 212 may be provided in all pixels or in some pixels. Also, a single pixel may have multiple light-receiving elements 212.

[0395] Figure 18A shows how a finger 220 touches the surface of the substrate 202. A portion of the light emitted by the light-emitting element 211G is reflected at the contact point between the substrate 202 and the finger 220. A portion of the reflected light is then incident on the light-receiving element 212, allowing detection that the finger 220 has touched the substrate 202. In other words, the display panel 200 can function as a touch panel.

[0396] The functional layer 203 includes circuits for driving the light-emitting elements 211R, 211G, and 211B, and a circuit for driving the light-receiving element 212. The functional layer 203 is provided with switches, transistors, capacitors, wiring, etc. However, when the light-emitting elements 211R, 211G, 211B, and the light-receiving element 212 are driven in a passive matrix manner, the configuration may be made without switches, transistors, etc.

[0397] The display panel 200 preferably has a function to detect the fingerprint of the finger 220. Figure 18B schematically shows an enlarged view of the contact area when the finger 220 is in contact with the substrate 202. Figure 18B also shows alternately arranged light-emitting elements 211 and light-receiving elements 212.

[0398] Fingerprints are formed on finger 220 by recesses and protrusions. Therefore, as shown in Figure 18B, the protrusions of the fingerprints are in contact with the substrate 202.

[0399] Light reflected from a surface or interface can be either specular or diffuse. Specularly reflected light is highly directional, with the angle of incidence and the angle of reflection being the same, while diffusely reflected light is less directional, with low angle dependence of intensity. The light reflected from the surface of finger 220 is predominantly diffuse. On the other hand, the light reflected from the interface between substrate 202 and the atmosphere is predominantly specular.

[0400] The intensity of light reflected from the contact or non-contact surface between the finger 220 and the substrate 202, and incident on the photodetector 212 located directly beneath them, is the sum of specularly reflected light and diffusely reflected light. As described above, in the recessed areas of the finger 220, the substrate 202 and the finger 220 do not come into contact, so specularly reflected light (indicated by the solid arrow) is dominant, while in the convex areas, they come into contact, so diffusely reflected light from the finger 220 (indicated by the dashed arrow) is dominant. Therefore, the intensity of light received by the photodetector 212 located directly beneath the recessed areas is higher than that received by the photodetector 212 located directly beneath the convex areas. This allows for imaging of the fingerprint of the finger 220.

[0401] The spacing between the light-receiving elements 212 is set to be smaller than the distance between two protrusions of a fingerprint, preferably the distance between adjacent recesses and protrusions, thereby enabling the acquisition of a clear fingerprint image. Since the distance between recesses and protrusions in a human fingerprint is approximately 200 μm, for example, the spacing between the light-receiving elements 212 is 400 μm or less, preferably 200 μm or less, more preferably 150 μm or less, even more preferably 100 μm or less, and even more preferably 50 μm or less, and 1 μm or more, preferably 10 μm or more, and more preferably 20 μm or more.

[0402] Figure 18C shows an example of a fingerprint image captured by the display panel 200. In Figure 18C, the outline of the finger 220 is shown with a dashed line and the outline of the contact area 221 is shown with a dashed line within the imaging range 223. Within the contact area 221, a high-contrast fingerprint 222 can be captured due to the difference in the amount of light incident on the light-receiving element 212.

[0403] The display panel 200 can also function as a touch panel and a pen tablet. Figure 18D shows the tip of the stylus 225 in contact with the substrate 202 and being slid in the direction of the dashed arrow.

[0404] As shown in Figure 18D, diffusely reflected light diffused between the tip of the stylus 225 and the contact surface of the substrate 202 is incident on the light-receiving element 212 located in the area overlapping with the contact surface, thereby enabling high-precision detection of the position of the tip of the stylus 225.

[0405] Figure 18E shows an example of the trajectory 226 of the stylus 225 detected by the display panel 200. Because the display panel 200 can detect the position of the object being detected, such as the stylus 225, with high positional accuracy, it is possible to perform high-resolution drawing in drawing applications, etc. Furthermore, unlike when using capacitive touch sensors or electromagnetic induction type touch pens, it is possible to detect the position of the object being detected even if it has high insulating properties, so the material of the tip of the stylus 225 is not a concern, and various writing instruments (e.g., brushes, glass pens, quill pens, etc.) can be used.

[0406] Here, Figures 18F to 18H show an example of a pixel applicable to the display panel 200.

[0407] The pixels shown in Figures 18F and 18G each have a red (R) light-emitting element 211R, a green (G) light-emitting element 211G, a blue (B) light-emitting element 211B, and a light-receiving element 212. Each pixel has a pixel circuit for driving the light-emitting elements 211R, 211G, 211B, and the light-receiving element 212.

[0408] Figure 18F shows an example where three light-emitting elements are arranged in a row, with a horizontally elongated light-receiving element 212 positioned below them. Figure 18G shows an example where two light-emitting elements are arranged in a row horizontally, with a horizontally elongated light-emitting element and a horizontally elongated light-receiving element positioned below them in that order.

[0409] The pixel shown in Figure 18H is an example having a white (W) light-emitting element 211W. Here, four light-emitting elements are arranged in a row, with a light-receiving element 212 positioned below them.

[0410] Furthermore, the pixel configuration is not limited to the above, and various arrangement methods can be adopted.

[0411] As described above, various pixel arrangements can be applied to the display device of this embodiment.

[0412] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0413] (Embodiment 5) This embodiment describes an example of a display device having a light-receiving element, etc., according to one aspect of the present invention.

[0414] In the display device of this embodiment, a pixel can be configured to have multiple sub-pixels, each having a light-emitting element that emits a different color from the others. For example, a pixel can be configured to have three types of sub-pixels. Examples of these three sub-pixels include sub-pixels of three colors: red (R), green (G), and blue (B); or sub-pixels of three colors: yellow (Y), cyan (C), and magenta (M). Alternatively, a pixel can be configured to have four types of sub-pixels. Examples of these four sub-pixels include sub-pixels of four colors: red, green, blue, and white (W); or sub-pixels of four colors: red, green, blue, and yellow.

[0415] There are no particular limitations on the arrangement of subpixels, and various methods can be applied. Examples of subpixel arrangements include stripe arrangements, S-stripe arrangements, matrix arrangements, delta arrangements, Bayer arrangements, and pentile arrangements.

[0416] Furthermore, the top surface shape of a sub-pixel can be, for example, a polygon such as a triangle, quadrilateral (including rectangles and squares), or pentagon, or a polygon with rounded corners, or an ellipse or a circle. The top surface shape of a sub-pixel referred to here corresponds to the top surface shape of the light-emitting region of the light-emitting element.

[0417] In a display device where each pixel has both a light-emitting element and a light-receiving element, the pixels have a light-receiving function, allowing for the detection of contact or proximity of an object while displaying an image. For example, not only can the display device display an image using all of its subpixels, but some subpixels can also emit light as a light source, while the remaining subpixels display the image.

[0418] Figures 19A to 19E show examples of sub-pixel arrangements for a pixel Px.

[0419] The pixel Px shown in Figures 19A to 19E has a region 218 and a sub-pixel PS. Region 218 has sub-pixels R, G, and B. Examples of the arrangement of sub-pixels R, G, and B in region 218 are shown in Figures 19F to 19H.

[0420] In Figure 19A, the pixel Px has a sub-pixel PS positioned below region 218. Alternatively, the pixel Px shown in Figure 19A may be configured by inverting adjacent pixels Px vertically, as shown in Figure 19B. Figures 20A and 20B show examples of multiple pixels Px being arranged. Figures 20A and 20B show examples where the configuration shown in Figure 19F is applied to region 218. In Figures 20A and 20B, the sub-pixels R, G, and B shown in the pixel Px are arranged along an angle of 45° with respect to the x-axis. In Figure 20, the x-axis and y-axis are perpendicular, and the x-axis is, for example, the direction along one side of the display unit of the display device. Also, one of the x-axis and y-axis is, for example, the direction of the longer side of the display unit of the display device. Figure 20A shows an example of pixels Px arranged in the same configuration, while Figure 20B shows an example of two pixels Px having symmetrical configurations being arranged alternately.

[0421] In Figure 19A, the sub-pixel PS is positioned towards the center horizontally of the pixel Px, while Figure 19C shows an example where the sub-pixel PS is positioned towards the left, and Figure 19D shows an example where the sub-pixel PS is positioned towards the right. Furthermore, Figure 19E shows an example where the sub-pixel PS has a horizontally elongated shape. In Figures 19A, 19C, and 19D, the resolution of the image captured by the sub-pixel PS may be higher compared to Figure 19E. Also, in Figure 19E, the sensitivity of the image captured by the sub-pixel PS may be higher compared to Figures 19A, 19C, and 19D.

[0422] The cases where the arrangement in Figure 19F is applied as region 218 in Figures 19A, 19C, and 19D will be explained. In these cases, in Figure 19A, of sub-pixels R, G, and B, sub-pixel G is positioned closest to sub-pixel PS. In Figure 19C, of ​​sub-pixels R, G, and B, sub-pixel R is positioned closest to sub-pixel PS. In Figure 19D, of sub-pixels R, G, and B, sub-pixel B is positioned closest to sub-pixel PS.

[0423] Figure 19F shows an example in region 218 where vertically elongated subpixels R, G, and B are arranged horizontally in a stripe pattern. Figure 19G shows an example in region 218 where subpixels R, G, and B are arranged in two horizontal rows, with subpixel G in the first row and subpixels R and B arranged vertically in the second row. Figure 19H shows an example in region 218 where horizontally elongated subpixels R, G, and B are arranged vertically in a stripe pattern.

[0424] Figures 19I and 19J show examples where region 218 has subpixels R, G, B, and W. Figure 19I shows an example where subpixels R, G, B, and W are arranged in a matrix in region 218. Figure 19J shows an example where vertically elongated subpixels R, G, B, and W are arranged horizontally in a stripe pattern in region 218.

[0425] Here, the white light emitted by the sub-pixel W may be a light with high instantaneous brightness, like a flashlight or strobe light, or a light with high color rendering, like a reading lamp. When using white light for reading lamps, the color temperature of the white light emission should be lowered. For example, by making the white light incandescent (e.g., 2500K to less than 3250K) or warm white (3250K to less than 3800K), a light source that is gentle on the user's eyes can be created.

[0426] A strobe light function can be implemented, for example, by a configuration that repeatedly switches between emitting and not emitting light in short cycles. A flashlight function can also be implemented, for example, by a configuration that generates a flash of light through instantaneous discharge using principles such as the electric double layer.

[0427] For example, when an electronic device is equipped with a camera function, images can be taken even at night by using a strobe light function or flashlight function. Here, the display device of the electronic device functions as a surface light source, and since shadows are less likely to be cast on the subject, clear images can be taken. Note that the strobe light function or flashlight function can be used not only at night. When equipping an electronic device with a strobe light function or flashlight function, the color temperature of the white light emission should be increased. For example, the color temperature of the light emitted from the electronic device should be white (3800K or more and less than 4500K), neutral white (4500K or more and less than 5500K), or daylight (5500K or more and less than 7100K).

[0428] Furthermore, if the flash emits excessively strong light, areas that originally have variations in brightness may appear as a single white color in the image (so-called "overexposure"). On the other hand, if the flash is too weak, dark areas may appear as a single black color in the image (so-called "underexposure"). To address this, the display device may be configured to detect the brightness around the subject using a light-receiving element, allowing the light-emitting element of the sub-pixel to adjust to the optimal light intensity. In other words, electronic devices can be said to function as exposure meters.

[0429] Furthermore, the strobe light and flashlight functions can be used for crime prevention or self-defense purposes.

[0430] Furthermore, to improve the color rendering of the light emission of the light-emitting element of the sub-pixel W, it is preferable to increase the number of light-emitting layers contained in the light-emitting element or the number of types of light-emitting materials contained in the light-emitting layer. This makes it possible to obtain a broad emission spectrum with intensity over a wider range of wavelengths, and to exhibit light emission with higher color rendering that is closer to sunlight.

[0431] For the above-mentioned lighting applications, white is preferred as the emitted color. However, there are no particular limitations on the emitted color for lighting applications, and the implementer may select one or more of the most suitable emitted colors as appropriate, such as white, blue, purple, blue-violet, green, yellow-green, yellow, orange, and red.

[0432] Figures 21A and 21B show examples of the arrangement of sub-pixels R, G, B, and PS that a pixel Px may have.

[0433] Figure 21A shows an example where four subpixels (subpixel R, subpixel G, subpixel B, and subpixel PS) are arranged in a matrix in pixel Px.

[0434] In the pixel shown in Figure 21B, there is a configuration in which three subpixels (subpixel R, subpixel G, and subpixel S) are arranged vertically next to one subpixel (subpixel B).

[0435] Figures 21C to 21E show examples of the arrangement of sub-pixels G, B, R, IR, and PS that a pixel Px possesses.

[0436] Figures 21C, 21D, and 21E show an example where a single pixel spans two rows. The upper row (first row) has three subpixels (subpixel G, subpixel B, and subpixel R), while the lower row (second row) has two subpixels (one subpixel PS and one subpixel IR).

[0437] Figure 21C shows a configuration where three vertically elongated sub-pixels G, B, and R are arranged horizontally, with a sub-pixel PS and a horizontally elongated sub-pixel IR arranged horizontally below them. Figure 21D shows a configuration where two horizontally elongated sub-pixels G and R are arranged vertically, with a vertically elongated sub-pixel B next to them, and a horizontally elongated sub-pixel IR and a vertically elongated sub-pixel PS arranged horizontally below them. Figure 21E shows a configuration where three vertically elongated sub-pixels R, G, and B are arranged horizontally, with a horizontally elongated sub-pixel IR and a vertically elongated sub-pixel PS arranged horizontally below them. Figures 21D and 21E show the case where the area of ​​sub-pixel IR is the largest, and the area of ​​sub-pixel PS is about the same as that of the sub-pixels.

[0438] Furthermore, a pixel Px may have two photodetectors with different wavelength ranges of high sensitivity. The pixel Px shown in Figure 21F has a configuration in which three vertically elongated sub-pixels G, B, and R are arranged horizontally, and below them, sub-pixels PS1 and PS2 are arranged horizontally. Sub-pixels PS1 and PS2 each have a photodetector. Sub-pixel PS2 has higher sensitivity in the infrared wavelength range compared to sub-pixel PS1, for example. It is preferable that sub-pixel PS1 detects light in wavelength ranges such as blue, violet, blue-violet, green, yellow-green, yellow, orange, and red. It is preferable that sub-pixel PS2 detects light in the infrared wavelength range, for example.

[0439] Here, the photodetectors of sub-pixels PS1 and PS2 can have an active layer formed by patterning an organic film deposited in the same process. In such cases, for example, in a microcavity structure using the pixel electrodes of the photodetectors and a common electrode, the cavity length can be made different for each photodetector to enhance the wavelength range of light detected by each photodetector.

[0440] Furthermore, the photodetectors in sub-pixel PS1 and sub-pixel PS2 may each have different active layers. In such cases, for example, the active layers of each photodetector can be formed using different FMMs.

[0441] The pixel Px shown in Figure 21G has a configuration in which three vertically elongated sub-pixels G, B, and R are arranged horizontally, and below them, vertically elongated sub-pixels IR, PS1, and PS2 are arranged horizontally.

[0442] The pixel Px shown in Figure 21H has a configuration in which two horizontally elongated sub-pixels G and R are arranged vertically, a vertically elongated sub-pixel B is arranged next to them, and below them, a vertically elongated sub-pixel IR, a vertically elongated sub-pixel PS1, and a vertically elongated sub-pixel PS2 are arranged horizontally.

[0443] Note that the layout of sub-pixels is not limited to the configuration described above.

[0444] Sub-pixel R has a light-emitting element that emits red light. Sub-pixel G has a light-emitting element that emits green light. Sub-pixel B has a light-emitting element that emits blue light. Sub-pixel IR has a light-emitting element that emits infrared light. Sub-pixel PS has a photodetector. The wavelength of light detected by sub-pixel PS is not particularly limited, but it is preferable that the photodetector in sub-pixel PS is sensitive to the light emitted by the light-emitting elements in sub-pixel R, sub-pixel G, sub-pixel B, or sub-pixel IR. For example, it is preferable to detect one or more of the wavelengths of light in the blue, violet, blue-violet, green, yellow-green, yellow, orange, and red ranges, and the infrared wavelength range.

[0445] The light-receiving area of ​​a sub-pixel PS is smaller than the light-emitting area of ​​other sub-pixels. A smaller light-receiving area results in a narrower imaging range, which helps suppress blurring in the image and improves resolution. Therefore, using sub-pixel PS enables high-definition or high-resolution imaging. For example, sub-pixel PS can be used to capture images for personal authentication, such as fingerprints, palm prints, irises, pulse patterns (including vein and artery patterns), or faces.

[0446] Furthermore, the sub-pixel PS can be used in touch sensors (also called direct touch sensors) or near-touch sensors (also called hover sensors, hover-touch sensors, non-contact sensors, or touchless sensors). For example, it is preferable for the sub-pixel PS to detect infrared light. By using an element that detects infrared light, touch detection becomes possible even in dark places. Also, by using an element that detects infrared light, it becomes possible to detect dark objects. For example, it becomes possible to detect a hand wearing gloves that are a dark color such as black as the target object.

[0447] Here, a touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen). A touch sensor can detect an object when it comes into direct contact with the display device. A near-touch sensor can detect an object even if it does not come into contact with the display device. For example, it is preferable that the display device can detect an object when the distance between the display device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm. With this configuration, it becomes possible to operate the display device without the object directly touching it; in other words, it becomes possible to operate the display device without contact (touchless). With the above configuration, the risk of the display device becoming dirty or scratched can be reduced, or it becomes possible to operate the display device without the object directly touching any dirt (e.g., dust or viruses) attached to the display device.

[0448] Furthermore, in order to perform high-resolution imaging, it is preferable that sub-pixels PS be provided on all pixels of the display device. On the other hand, when sub-pixels PS are used in touch sensors or near-touch sensors, the accuracy required is not as high as when capturing fingerprints, so it is sufficient to provide them on only some of the pixels of the display device. The detection speed can be increased by reducing the number of sub-pixels PS in the display device to fewer than the number of sub-pixels R, etc.

[0449] Figure 22A shows an example of a pixel circuit for a sub-pixel having a light-receiving element, and Figure 22B shows an example of a pixel circuit for a sub-pixel having an light-emitting element.

[0450] The pixel circuit PIX1 shown in Figure 22A includes a photodetector PD, transistors M11, M12, M13, M14, and a capacitive element C2. Here, an example is shown in which a photodiode is used as the photodetector PD.

[0451] The photodetector PD has its anode electrically connected to wiring V1 and its cathode electrically connected to either the source or drain of transistor M11. Transistor M11 has its gate electrically connected to wiring TX and its other source or drain electrically connected to one electrode of capacitive element C2, one source or drain of transistor M12, and the gate of transistor M13. Transistor M12 has its gate electrically connected to wiring RES and its other source or drain electrically connected to wiring V2. Transistor M13 has its source or drain electrically connected to wiring V3 and its other source or drain electrically connected to either the source or drain of transistor M14. Transistor M14 has its gate electrically connected to wiring SE and its other source or drain electrically connected to wiring OUT1.

[0452] Constant potentials are supplied to wirings V1, V2, and V3, respectively. When the photodetector PD is driven with reverse bias, a higher potential is supplied to wiring V2 than to wiring V1. Transistor M12 is controlled by a signal supplied to wiring RES and has the function of resetting the potential of the node connected to the gate of transistor M13 to the potential supplied to wiring V2. Transistor M11 is controlled by a signal supplied to wiring TX and has the function of controlling the timing at which the potential of the above node changes according to the current flowing through the photodetector PD. Transistor M13 functions as an amplifying transistor that provides an output according to the potential of the above node. Transistor M14 is controlled by a signal supplied to wiring SE and functions as a selection transistor for reading the output according to the potential of the above node with an external circuit connected to wiring OUT1.

[0453] The pixel circuit PIX2 shown in Figure 22B includes a light-emitting element (EL), transistors M15, M16, M17, and a capacitive element C3. Here, an example using a light-emitting diode (LED) as the light-emitting element (EL) is shown. In particular, it is preferable to use an organic EL element as the light-emitting element (EL).

[0454] Transistor M15 has its gate electrically connected to wiring VG, one of its source or drain electrically connected to wiring VS, and the other of its source or drain electrically connected to one electrode of capacitive element C3 and the gate of transistor M16. One of the source or drain of transistor M16 is electrically connected to wiring V4, and the other is electrically connected to the anode of light-emitting element EL and one of the source or drain of transistor M17. Transistor M17 has its gate electrically connected to wiring MS, and the other of its source or drain electrically connected to wiring OUT2. The cathode of light-emitting element EL is electrically connected to wiring V5.

[0455] Constant potentials are supplied to wirings V4 and V5, respectively. This allows the anode side of the light-emitting element EL to be at a high potential and the cathode side to be at a lower potential than the anode side. Transistor M15 is controlled by a signal supplied to wiring VG and functions as a selection transistor to control the selected state of the pixel circuit PIX2. Transistor M16 functions as a drive transistor that controls the current flowing to the light-emitting element EL according to the potential supplied to its gate. When transistor M15 is conducting, the potential supplied to wiring VS is supplied to the gate of transistor M16, and the luminescence brightness of the light-emitting element EL can be controlled according to that potential. Transistor M17 is controlled by a signal supplied to wiring MS and has the function of outputting the potential between transistor M16 and the light-emitting element EL to the outside via wiring OUT2.

[0456] Here, it is preferable to apply transistors to which the semiconductor layer in which the channel is formed is made of a metal oxide (oxide semiconductor) for transistors M11, M12, M13, and M14 in the pixel circuit PIX1, and transistors M15, M16, and M17 in the pixel circuit PIX2.

[0457] Transistors using metal oxides, which have a wider bandgap and lower carrier density than silicon, can achieve extremely low off-currents. Therefore, this low off-current allows the charge accumulated in the capacitive element connected in series with the transistor to be retained for extended periods. For this reason, it is preferable to use transistors made of oxide semiconductors, particularly for transistors M11, M12, and M15 connected in series with capacitive element C2 or C3. Similarly, using oxide semiconductor transistors for other transistors can reduce manufacturing costs.

[0458] For example, the off-current value of an OS transistor per 1 μm channel width at room temperature is 1 aA (1 × 10⁻¹⁰). -18 A) Below, 1zA(1×10 -21 A) Less than or equal to 1yA(1×10 -24 A) It can be less than or equal to the following. Note that the off-current value of a Si transistor per 1 μm of channel width at room temperature is 1 fA (1 × 10⁻¹⁰). -15 A) More than 1pA (1×10 -12 A) The answer is as follows. Therefore, it can be said that the off-current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0459] Furthermore, transistors M11 to M17 can also be transistors in which silicon is applied as the semiconductor in which the channel is formed. In particular, using highly crystalline silicon such as single-crystal silicon or polycrystalline silicon is preferable because it can achieve high field-effect mobility, enabling faster operation.

[0460] Alternatively, a configuration may be used in which one or more transistors among transistors M11 to M17 have oxide semiconductors applied, and the others have silicon applied.

[0461] Note that in Figures 22A and 22B, transistors are shown as n-channel transistors, but p-channel transistors can also be used.

[0462] It is preferable that the transistors in pixel circuit PIX1 and pixel circuit PIX2 be formed side by side on the same substrate. In particular, it is preferable to configure the transistors in pixel circuit PIX1 and pixel circuit PIX2 to be mixed within a single region and arranged periodically.

[0463] Furthermore, it is preferable to provide one or more layers having either or both transistors and / or capacitive elements in a position that overlaps with the light-receiving element PD or light-emitting element EL. This reduces the effective area occupied by each pixel circuit, enabling the realization of a high-definition light-receiving or display unit.

[0464] To increase the luminescence brightness of the light-emitting element (EL) in a pixel circuit, it is necessary to increase the amount of current flowing through the EL. To achieve this, the source-drain voltage of the drive transistor in the pixel circuit must be increased. Compared to Si transistors, OS transistors have a higher breakdown voltage between the source and drain, allowing a higher voltage to be applied to the source-drain of an OS transistor. As a result, by using an OS transistor as the drive transistor in the pixel circuit, the amount of current flowing through the light-emitting element can be increased, thereby increasing the luminescence brightness of the light-emitting element.

[0465] Furthermore, when the transistor operates in the saturation region, OS transistors exhibit smaller changes in source-drain current in response to changes in gate-source voltage compared to Si transistors. Therefore, by using OS transistors as driving transistors in the pixel circuit, the current flowing between the source and drain can be precisely controlled by changes in gate-source voltage, thereby allowing control of the current flowing to the light-emitting element. This allows for an increase in the number of grayscale levels in the pixel circuit.

[0466] Furthermore, in terms of the saturation characteristics of the current flowing when a transistor operates in the saturation region, OS transistors can supply a more stable current (saturation current) than Si transistors, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a driving transistor, a stable current can be supplied to a light-emitting element, even if there are variations in the current-voltage characteristics of the light-emitting element containing EL material. In other words, when operating in the saturation region, the source-drain current remains almost unchanged even when the source-drain voltage is increased, thus stabilizing the luminescence brightness of the light-emitting element.

[0467] As described above, by using OS transistors in the drive transistors included in the pixel circuit, it is possible to achieve "suppression of black level floating," "increase in luminescence brightness," "multi-gradation," and "suppression of variations in light-emitting elements."

[0468] Furthermore, a display device according to one aspect of the present invention can have a variable refresh rate. For example, power consumption can be reduced by adjusting the refresh rate according to the content displayed on the display device (for example, within a range of 0.01 Hz to 240 Hz). In addition, a drive that reduces the power consumption of the display device by driving with a reduced refresh rate may be called an idling stop (IDS) drive.

[0469] Furthermore, the drive frequency of the touch sensor or near-touch sensor may be changed according to the refresh rate mentioned above. For example, if the refresh rate of the display device is 120Hz, the drive frequency of the touch sensor or near-touch sensor can be set to a frequency higher than 120Hz (typically 240Hz). This configuration enables low power consumption and increases the response speed of the touch sensor or near-touch sensor.

[0470] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0471] (Embodiment 6) In this embodiment, a light-emitting element (also called a light-emitting device) and a light-receiving element (also called a light-receiving device) that can be used in a light-receiving device according to one aspect of the present invention will be described.

[0472] In this specification, elements fabricated using a metal mask or an FMM (Fine Metal Mask, a high-resolution metal mask) may be referred to as elements with an MM (metal mask) structure. In addition, in this specification, elements fabricated without using a metal mask or an FMM may be referred to as elements with an MML (metal maskless) structure.

[0473] In this specification, a structure in which different light-emitting layers are created or painted for each color of light-emitting element (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. Also, in this specification, a light-emitting element capable of emitting white light may be referred to as a white light-emitting element. A white light-emitting element can be combined with a colored layer (for example, a color filter) to create a light-emitting element capable of full-color display.

[0474] Furthermore, light-emitting elements can be broadly classified into single-structure and tandem-structure elements. In a single-structure element, it is preferable that one light-emitting unit is located between a pair of electrodes, and that this light-emitting unit includes one or more light-emitting layers.

[0475] To obtain white light emission using two light-emitting layers in a single structure, one should select light-emitting layers such that the emission colors of each layer are complementary. For example, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary, a configuration can be obtained in which the entire light-emitting device emits white light. More specifically, for example, a light-emitting device has a first light-emitting layer and a second light-emitting layer, where the first light-emitting layer has a light-emitting material that emits a first color, and the second light-emitting layer has a light-emitting material that emits a second color, and the first and second colors are complementary. In the case of a light-emitting device having three or more light-emitting layers, the combination of the emission colors of the three or more light-emitting layers can enable the entire light-emitting device to emit white light.

[0476] In a tandem structure, it is preferable to have two or more light-emitting units between a pair of electrodes, and each light-emitting unit includes one or more light-emitting layers. By using light-emitting layers that emit light of the same color in each light-emitting unit, the brightness per given current can be increased, and a more reliable light-emitting element can be obtained compared to a single structure. To obtain white light emission in a tandem structure, the light from the light-emitting layers of multiple light-emitting units can be combined to produce white light emission. The combination of light-emitting colors that produces white light emission is the same as in the single structure. In a tandem structure, it is preferable to provide an intermediate layer, such as a charge-generating layer, between the multiple light-emitting units.

[0477] Furthermore, when comparing the aforementioned white light-emitting elements (single or tandem structure) with SBS structure light-emitting elements, SBS structure light-emitting elements can consume less power than white light-emitting elements. If you want to keep power consumption low, it is preferable to use SBS structure light-emitting elements. On the other hand, white light-emitting elements are preferable because their manufacturing process is simpler than that of SBS structure light-emitting elements, which can lead to lower manufacturing costs or higher manufacturing yields.

[0478] [Element structure] Next, a detailed configuration of a light-emitting element, a light-receiving element, and a light-receiving element that can be used in a display device according to one embodiment of the present invention will be described.

[0479] A display device according to one aspect of the present invention may be a top-emission type that emits light in the direction opposite to the substrate on which the light-emitting element is formed, a bottom-emission type that emits light toward the substrate on which the light-emitting element is formed, or a dual-emission type that emits light on both sides.

[0480] In this embodiment, a top-emission type display device will be used as an example for explanation.

[0481] In this specification, unless otherwise specified, even when describing a configuration having multiple elements (such as light-emitting elements or light-emitting layers), the letters will be omitted when describing matters common to each element.

[0482] The display device 500 shown in Figure 23(A) has multiple light-emitting elements 550W that emit white light. A colored layer 545R that transmits red light, a colored layer 545G that transmits green light, or a colored layer 545B that transmits blue light is provided on each light-emitting element 550W. Here, the colored layers 545R, 545G, and 545B can be provided so as to overlap the light-emitting elements 550W via a protective layer 540.

[0483] The light-emitting element 550W shown in Figure 23A has a light-emitting unit 512W between a pair of electrodes (electrode 501, electrode 502). Electrode 501 functions as a pixel electrode and is provided for each light-emitting element. Electrode 502 functions as a common electrode and is provided in common for multiple light-emitting elements.

[0484] In other words, the light-emitting element 550W shown in Figure 23A is a light-emitting element having one light-emitting unit. In this specification, a configuration having one light-emitting unit between a pair of electrodes, as shown in Figure 23A, is referred to as a single structure.

[0485] The electrode 502 that extracts light preferably uses a conductive film that transmits visible light. Furthermore, it is preferable to use a conductive film that reflects visible light on the electrode 501 that does not extract light.

[0486] In this embodiment, it is preferable that the light-emitting element of the display device has a microcavity structure. Therefore, it is preferable that one of the pair of electrodes of the light-emitting element has an electrode that is transparent to and reflective to visible light (a semi-transmitting / semi-reflective electrode), and the other has an electrode that is reflective to visible light (a reflective electrode). By having a microcavity structure in the light-emitting element, the light emitted from the light-emitting layer can be resonated between the two electrodes, thereby strengthening the light emitted from the light-emitting element.

[0487] Furthermore, semi-transmissive / semi-reflective electrodes can have a laminated structure consisting of a reflective electrode and an electrode that transmits visible light (also called a transparent electrode).

[0488] The light transmittance of the transparent electrode shall be 40% or more. For example, it is preferable to use an electrode with a visible light transmittance (light with a wavelength of 400 nm or more and less than 750 nm) of 40% or more in the light-emitting element. The visible light reflectance of the semi-transparent / semi-reflective electrode shall be 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode shall be 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes shall be 1 × 10⁻⁶ -2 It is preferable that the value be Ωcm or less. Furthermore, if the light-emitting element emits near-infrared light (light with a wavelength of 750 nm to 1300 nm), it is preferable that the transmittance or reflectance of these electrodes in near-infrared light satisfies the above numerical range, similar to the transmittance or reflectance of visible light.

[0489] As shown in Figure 23A, the light-emitting unit 512W can be formed as island-like layers. In other words, the light-emitting unit 512W shown in Figure 23A corresponds to the stacking of organic layers 112a, 115, and 116, organic layer 112b, 115, and 116, or organic layer 112c, 115, and 116, as shown in Figure 1B, etc. The light-emitting element 550W corresponds to the light-emitting element 140a, 140b, or 140c. Also, electrode 501 corresponds to pixel electrode 111a, 111b, or 111c. Electrode 502 corresponds to common electrode 113.

[0490] The light-emitting unit 512W has layers 521, 522, light-emitting layer 523Q_1, light-emitting layer 523Q_2, light-emitting layer 523Q_3, layer 524, etc. The light-emitting element 550W has layers 525, etc. between the light-emitting unit 512W and the electrode 502.

[0491] Figure 23A shows an example where the light-emitting unit 512W does not have layer 525, and layer 525 is provided in common among the light-emitting elements. In this case, layer 525 can be called a common layer. By providing one or more common layers to multiple light-emitting elements in this way, the manufacturing process can be simplified, and thus manufacturing costs can be reduced. Note that layer 525 may be provided for each light-emitting element. In other words, layer 525 may be included in the light-emitting unit 512W.

[0492] Layer 521 may have, for example, a layer containing a material with high hole injection capabilities (hole injection layer). Layer 522 may have, for example, a layer containing a material with high hole transport capabilities (hole transport layer). Layer 524 may have, for example, a layer containing a material with high electron transport capabilities (electron transport layer). Layer 525 may have, for example, a layer containing a material with high electron injection capabilities (electron injection layer). Alternatively, layer 521 may have an electron injection layer, layer 522 may have an electron transport layer, layer 524 may have a hole transport layer, and layer 525 may have a hole injection layer.

[0493] The positive hole injection layer is a layer that injects positive holes from the anode into the positive hole transport layer, and is a layer containing a material with high positive hole injection property. Examples of materials with high positive hole injection property include aromatic amine compounds and composite materials containing a positive hole transporting material and an acceptor material (electron accepting material).

[0494] In the light emitting device, the positive hole transport layer is a layer that transports the positive holes injected from the anode by the positive hole injection layer to the light emitting layer. The positive hole transport layer is a layer that transports the positive holes injected from the anode by the positive hole injection layer to the light emitting layer. The positive hole transport layer is a layer containing a positive hole transporting material. As the positive hole transporting material, a substance having a positive hole mobility of 10 -6 cm 2 / Vs or more is preferred. As long as the substance has higher positive hole transportability than electrons, other substances can also be used. As the positive hole transporting material, π-electron excess type heteroaromatic compounds (such as carbazole derivatives, thiophene derivatives, furan derivatives, etc.), aromatic amines (compounds having an aromatic amine skeleton), and other materials with high positive hole transportability are preferred.

[0495] In the light emitting device, the electron transport layer is a layer that transports the electrons injected from the cathode by the electron injection layer to the light emitting layer. The electron transport layer is a layer containing an electron transporting material. As the electron transporting material, a substance having an electron mobility of 1×10 -6 cm 2 / Vs or more is preferred. As long as the substance has higher electron transportability than positive holes, other substances can also be used. As the electron transporting material, metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, etc. In addition, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron deficient type heteroaromatic compounds containing nitrogen-containing heteroaromatic compounds and other materials with high electron transportability can be used.

[0496] Furthermore, the electron transport layer may have a multilayer structure, and may also have a hole blocking layer in contact with the light-emitting layer to block holes moving from the anode side through the light-emitting layer to the cathode side.

[0497] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is a layer containing a material with high electron injection capabilities. Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron injection capabilities. Composite materials containing both electron transport materials and donor materials (electron-donating materials) can also be used as materials with high electron injection capabilities.

[0498] Examples of electron injection layers include lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), and calcium fluoride (CaF). x (where X is any number), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenolatrium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatrium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatrium (abbreviation: LiPPP), lithium oxide (LiO x Alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used. Furthermore, the electron injection layer may be a multilayer structure of two or more layers. For example, this multilayer structure may consist of lithium fluoride as the first layer and ytterbium as the second layer.

[0499] Alternatively, an electron-transporting material may be used as the electron injection layer. For example, a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as the electron-transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), or a triazine ring can be used.

[0500] Furthermore, it is preferable that the lowest unoccupied molecular orbital (LUMO) of an organic compound containing a lone pair of electrons is between -3.6 eV and -2.3 eV. In general, the highest occupied molecular orbital (HOMO) level and LUMO level of an organic compound can be estimated by methods such as cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, and inverse photoelectron spectroscopy.

[0501] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviated as HATNA), and 2,4,6-tris[3'-(pyridine-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated as TmPPPyTz) can be used in organic compounds containing lone pairs of electrons. NBPhen has a higher glass transition temperature (Tg) and superior heat resistance compared to BPhen.

[0502] In Figure 23A, layers 521 and 522 are shown separately, but the design is not limited to this. For example, if layer 521 has the functions of both a hole injection layer and a hole transport layer, or if layer 521 has the functions of both an electron injection layer and an electron transport layer, layer 522 may be omitted.

[0503] The light-emitting layers 523Q_1, 523Q_2, and 523Q_3 are layers containing light-emitting materials. Each light-emitting layer may contain one or more types of light-emitting materials. Suitable light-emitting materials include those exhibiting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red. Furthermore, materials emitting near-infrared light may also be used as light-emitting materials.

[0504] Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0505] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0506] Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton; organometallic complexes (especially iridium complexes) using phenylpyridine derivatives having electron-withdrawing groups as ligands; platinum complexes; and rare earth metal complexes.

[0507] The light-emitting layer may contain one or more types of organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material). One or more of these organic compounds may be hole-transporting materials and / or electron-transporting materials. Alternatively, one or more of these organic compounds may be bipolar materials or TADF materials.

[0508] The light-emitting layer preferably comprises, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that readily forms an excitation complex. This configuration allows for efficient emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the excitation complex to the light-emitting substance (phosphorescent material). By selecting a combination that forms an excitation complex that exhibits emission overlapping with the wavelength of the lowest-energy absorption band of the light-emitting substance, energy transfer becomes smoother, and light emission can be obtained efficiently. This configuration simultaneously achieves high efficiency, low-voltage operation, and a long lifespan for the light-emitting device.

[0509] For a combination of materials to form an excited complex, it is preferable that the HOMO level (highest occupied orbital level) of the hole-transporting material is greater than or equal to the HOMO level of the electron-transporting material. It is also preferable that the LUMO level (lowest unoccupied orbital level) of the hole-transporting material is greater than or equal to the LUMO level of the electron-transporting material. The LUMO and HOMO levels of the materials can be derived from the electrochemical properties (reduction potential and oxidation potential) of the materials measured by cyclic voltammetry (CV).

[0510] The formation of excited complexes can be confirmed, for example, by comparing the emission spectra of a hole-transporting material, an electron-transporting material, and a mixed film made by mixing these materials, and observing that the emission spectrum of the mixed film shifts to a longer wavelength than the emission spectra of each individual material (or has a new peak on the longer wavelength side). Alternatively, it can be confirmed by comparing the transient photoluminescence (PL) of a hole-transporting material, an electron-transporting material, and a mixed film made by mixing these materials, and observing differences in the transient response, such as the transient PL lifetime of the mixed film having a longer lifetime component or a larger proportion of the delayed component than the transient PL lifetime of each individual material. Furthermore, the transient PL mentioned above can be read as transient electroluminescence (EL). That is, the formation of excited complexes can also be confirmed by comparing the transient EL of a hole-transporting material, an electron-transporting material, and a mixed film made by mixing these materials, and observing the differences in the transient response.

[0511] In the light-emitting element 550W shown in Figure 23A, white light emission can be obtained from the light-emitting element 550W by selecting light-emitting layers 523Q_1, 523Q_2, and 523Q_3 such that their light emission is in a complementary color relationship. Here, an example is shown in which the light-emitting unit 512W has three light-emitting layers, but the number of light-emitting layers is not limited to two layers, for example.

[0512] By providing a colored layer 545R, a colored layer 545G, or a colored layer 545B on such a light-emitting element 550W capable of emitting white light, each pixel can emit red light, green light, or blue light, enabling full-color display. While Figure 27A and other figures show an example where a colored layer 545R transmits red light, a colored layer 545G transmits green light, and a colored layer 545B transmits blue light, the present invention is not limited to this. The visible light transmitted by the colored layers should consist of at least two or more different colors of visible light, such as red, green, blue, cyan, magenta, or yellow, which can be appropriately selected.

[0513] Therefore, even if layers 521, 522, 524, 525, light-emitting layer 523Q_1, light-emitting layer 523Q_2, and light-emitting layer 523Q_3 have the same configuration (material, film thickness, etc.) for each color pixel, full-color display can be achieved by appropriately providing colored layers. Thus, a display device according to one aspect of the present invention does not require the creation of different light-emitting elements for each pixel, thus simplifying the manufacturing process and reducing manufacturing costs. However, the present invention is not limited thereto, and one or more of layers 521, 522, 524, 525, light-emitting layer 523Q_1, light-emitting layer 523Q_2, and light-emitting layer 523Q_3 can have different configurations depending on the pixel.

[0514] Figures 24B to 24F show examples of the configuration of a light-receiving element 550S that can be applied to a display device. Components shown in Figures 24B to 24F that are the same as those shown in Figure 23 are denoted by the same reference numerals.

[0515] The photodetector 550S shown in Figure 24B has a light-receiving unit 555 between a pair of electrodes (electrode 501, electrode 502). Electrode 501 functions as a pixel electrode and is provided for each photodetector. Electrode 502 functions as a common electrode and is provided in common to multiple light-emitting elements and photodetectors.

[0516] As shown in Figure 24B, the light-receiving units 555 can each be formed as island-like layers. In other words, the light-receiving units 555 shown in Figure 24B correspond to the organic layer 155 shown in Figure 1B, etc. The light-receiving element 550S corresponds to the light-receiving element 140S. Electrode 501 corresponds to the pixel electrode 111S. Electrode 502 corresponds to the common electrode 113.

[0517] The light-receiving unit 555 has layers 521, 522, an active layer 526, and 524. Layers 521, 522, and 524 are the same as those used in the light-emitting unit 512W. The light-receiving element 550S has layers 525 and the like between the light-receiving unit 555 and the electrode 502. A protective layer 540 is also provided on the electrode 502. Here, layer 525, the electrode 502, and the protective layer 540 are films that are provided in common to the light-emitting element 550W and the light-receiving element 550S, as shown in Figure 23A and the like.

[0518] The active layer 526 contains a semiconductor. Examples of such semiconductors include inorganic semiconductors such as silicon, and organic semiconductors containing organic compounds. In this embodiment, an example is shown in which an organic semiconductor is used as the semiconductor of the active layer 526. Using an organic semiconductor is preferable because the light-emitting layer and the active layer 526 can be formed using the same method (for example, vacuum deposition), and the manufacturing equipment can be shared.

[0519] For example, a pn-type or pin-type photodiode can be used as the active layer 526. The n-type semiconductor material and the p-type semiconductor material that can be used as the active layer 526 are shown below. The n-type semiconductor material and the p-type semiconductor material may be used in layers stacked on top of each other, or they may be mixed and used as a single layer.

[0520] The n-type semiconductor material of the active layer 526 is fullerene (for example, C 60 , C 70Examples include electron-accepting organic semiconductor materials such as fullerene derivatives. Fullerenes have a shape like a soccer ball, and this shape is energetically stable. Both the HOMO and LUMO levels of fullerenes are deep (low). Because the LUMO level of fullerenes is deep, they have extremely high electron-accepting properties. Normally, when π-electron conjugation (resonance) spreads out in a plane, as in benzene, electron-donating properties increase, but because fullerenes have a spherical shape, they have high electron-accepting properties despite the large spread of π-electron conjugation. High electron-accepting properties allow for fast and efficient charge separation, making them useful as photodetectors. 60 , C 70 Both have a broad absorption band in the visible light region, and especially C 70 is C 60 Compared to [another compound], it is preferable because it has a larger π-electron conjugation system and a broad absorption band in the long-wavelength region. Other examples of fullerene derivatives include [6,6]-Phenyl-C71-butyric acid methyl ester (abbreviated as PC70BM), [6,6]-Phenyl-C61-butyric acid methyl ester (abbreviated as PC60BM), and 1',1'',4',4''-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6]fullerene-C60 (abbreviated as ICBA).

[0521] Furthermore, examples of n-type semiconductor materials include perylenetetracarboxylic acid derivatives such as N,N'-dimethyl-3,4,9,10-perylenetetracarboxylic acid diimide (abbreviated as Me-PTCDI).

[0522] Furthermore, an example of an n-type semiconductor material is 2,2'-(5,5'-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)dimalonitrile (abbreviation: FT2TDMN).

[0523] Furthermore, examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0524] Examples of p-type semiconductor materials for the active layer 526 include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), quinacridone, and rubrene.

[0525] Furthermore, examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. In addition, examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0526] The HOMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the HOMO level of electron-accepting organic semiconductor materials. The LUMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the LUMO level of electron-accepting organic semiconductor materials.

[0527] It is preferable to use spherical fullerenes as electron-accepting organic semiconductor materials and organic semiconductor materials with a near-planar shape as electron-donating organic semiconductor materials. Molecules with similar shapes tend to aggregate, and when molecules of the same type aggregate, their molecular orbital energy levels are close, which can improve carrier transport.

[0528] For example, the active layer 526 is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor. Alternatively, the active layer 526 may be formed by stacking an n-type semiconductor and a p-type semiconductor.

[0529] The light-emitting element and the light-receiving element may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-emitting element and the light-receiving element can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0530] For example, polymer compounds such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS), and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole transporting materials or electron blocking materials. In addition, inorganic compounds such as zinc oxide (ZnO) and organic compounds such as polyethyleneimine ethoxylate (PEIE) can be used as electron transporting materials or hole blocking materials. The light-receiving device may have, for example, a mixed film of PEIE and ZnO.

[0531] Furthermore, the active layer 526 can use polymer compounds such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]]polymer (abbreviated as PBDB-T) or PBDB-T derivatives, which function as donors. For example, a method of dispersing the acceptor material in PBDB-T or a PBDB-T derivative can be used.

[0532] Furthermore, the active layer 526 may contain a mixture of three or more materials. For example, to broaden the wavelength range, a third material may be mixed with an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0533] As shown in Figure 23B, the light-receiving unit 555 can be stacked in the following order: layer 521 (hole injection layer), layer 522 (hole transport layer), active layer 526, layer 524 (electron transport layer), and layer 525 (electron injection layer). This is the same stacking order as the light-emitting unit 512W shown in Figure 23A. In this case, in both the light-emitting element 550W and the light-receiving element 550S, electrode 501 can function as the anode and electrode 502 can function as the cathode. In other words, by driving the light-receiving element 550S with a reverse bias applied between electrode 501 and electrode 502, the light-receiving element 550S can detect light incident on it, generate charge, and extract it as current.

[0534] However, the present invention is not limited thereto. For example, the layer 521 may have an electron injection layer, the layer 522 may have an electron transport layer, the layer 524 may have a hole transport layer, and the layer 525 may have a hole injection layer. In this case, in the photodetector 550S, electrode 501 may function as a cathode and electrode 502 may function as an anode. As shown in the above embodiment, in the present invention, the light-emitting element 550W and the photodetector 550S can be formed individually. Therefore, even if the configurations of the light-emitting element 550W and the photodetector 550S are significantly different, they can be manufactured relatively easily.

[0535] Furthermore, it is not necessary to provide all of the layers 521, 522, 524, and 525 shown in Figure 23B. For example, as shown in Figure 23C, the layer 521 having the hole injection layer may be omitted, and the layer 522 having the hole injection layer may be in contact with the electrode 501. It is preferable to provide at least one of the layer 522 having the hole transport layer and the layer 524 having the electron transport layer in contact with the active layer 526, as shown in Figures 23B and 23C. This helps to suppress the occurrence of leakage current between the electrode 501 and the electrode 502 in the photodetector 550S, which would reduce the imaging sensitivity.

[0536] Furthermore, it is also possible to omit either layer 522 or layer 524. For example, as shown in Figure 23D, the active layer 526 may be in contact with layer 525 without providing layer 524, which has an electron transport layer.

[0537] Furthermore, the light-receiving unit 555 can also consist only of the active layer 526. For example, as shown in Figure 23E, the active layer 526 may be in contact with the electrode 501 without providing the layer 522 having a hole transport layer.

[0538] Furthermore, if layer 525 is not a common layer but is provided for each light-emitting element, it is also possible to configure the photodetector 550S without layer 525. For example, as shown in Figure 23F, the active layer 526 may be in contact with the electrode 502 without providing layer 525 which has an electron injection layer.

[0539] This embodiment can be combined with other embodiments as appropriate.

[0540] (Embodiment 7) This embodiment describes a high-resolution display device.

[0541] [Example of display panel configuration] Wearable electronic devices for VR and AR can provide 3D images by using parallax. In this case, the image for the right eye must be displayed within the right eye's field of view, and the image for the left eye must be displayed within the left eye's field of view. Here, the display area of ​​the display device may be a horizontally elongated rectangle, but pixels located outside the fields of view of the right and left eyes do not contribute to the display, and therefore these pixels will always display black.

[0542] Therefore, it is preferable to divide the display panel into two areas, one for the right eye and one for the left eye, and to configure it so that pixels are not placed in the outer area that does not contribute to the display. This reduces the power consumption required for writing pixels. In addition, the load on source lines, gate lines, etc. is reduced, making it possible to display at a higher frame rate. As a result, smoother video can be displayed, which enhances the sense of realism.

[0543] Figure 24A shows an example of the display panel configuration. In Figure 24A, the left eye display unit 702L and the right eye display unit 702R are arranged inside the circuit board 701. In addition to the display units 702L and 702R, the circuit board 701 may also contain drive circuits, wiring, ICs, FPCs, etc.

[0544] The display units 702L and 702R shown in Figure 24A have a square top surface shape.

[0545] Furthermore, the top shapes of the display units 702L and 702R may be other regular polygons. Figure 24B shows an example of a regular hexagon, Figure 24C shows an example of a regular octagon, Figure 24D shows an example of a regular decagon, and Figure 24E shows an example of a regular dodecagon. In this way, by using a polygon with an even number of corners, the shape of the display unit can be made symmetrical. Note that polygons that are not regular polygons may also be used. In addition, regular polygons or polygons with rounded corners may be used.

[0546] Furthermore, because the display area is composed of pixels arranged in a matrix, the straight sections of the outline of each display area are not strictly straight lines, and there may be stepped sections. In particular, the straight sections that are not parallel to the direction of pixel arrangement will have a stepped top surface shape. However, since the user does not perceive the shape of the pixels when viewing the display, even if the diagonal outline of the display area is strictly stepped, it can be considered a straight line. Similarly, even if the curved sections of the outline of the display area are strictly stepped, they can be considered curves.

[0547] Figure 24F also shows an example where the top surface shape of the display unit 702L and the display unit 702R is a circle.

[0548] Furthermore, the top shapes of the display units 702L and 702R may be asymmetrical. Also, they do not have to be regular polygons.

[0549] Figure 24G shows an example where the top surfaces of the display units 702L and 702R are asymmetrical octagons. Figure 24H shows an example where they are regular heptagons. Even when the top surfaces of the display units 702L and 702R are asymmetrical, it is preferable to arrange the display units 702L and 702R symmetrically. This allows for the provision of images that do not appear unnatural.

[0550] The above describes a configuration where the display unit is divided into two parts, but it may also be a single, continuous shape.

[0551] Figure 24I shows an example of connecting the two circular display units 702 in Figure 24F. Figure 24J shows an example of connecting the two regular octagonal display units 702 in Figure 24C.

[0552] The above is an explanation of an example of a display panel configuration.

[0553] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., can be appropriately combined with other configuration examples or drawings, etc., at least in part.

[0554] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0555] (Embodiment 8) This embodiment describes metal oxides (also called oxide semiconductors) that can be used in the OS transistor described in the above embodiment.

[0556] The metal oxide used in the OS transistor preferably contains at least indium or zinc, and more preferably indium and zinc. For example, the metal oxide preferably contains indium, M (where M is one or more selected from gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc. In particular, M is preferably one or more selected from gallium, aluminum, yttrium, and tin, and more preferably gallium.

[0557] Furthermore, metal oxides can be formed by methods such as sputtering, chemical vapor deposition (CVD) methods including metal-organic chemical vapor deposition (MOCVD), or atomic layer deposition (ALD).

[0558] In the following sections, we will describe oxides containing indium (In), gallium (Ga), and zinc (Zn) as examples of metal oxides. Note that oxides containing indium (In), gallium (Ga), and zinc (Zn) are sometimes called In-Ga-Zn oxides.

[0559] <Classification of crystal structures> Examples of crystalline structures for oxide semiconductors include amorphous (including completely amorphous), CAAC (c-axis-aligned crystalline), nc (nanocrystalline), CAC (cloud-aligned composite), single crystal, and polycrystal.

[0560] The crystal structure of a film or substrate can be evaluated using X-ray diffraction (XRD) spectroscopy. For example, it can be evaluated using the XRD spectrum obtained from a GIXD (Grazing-Incidence XRD) measurement. The GIXD method is also known as the thin-film method or the Seemann-Bohlin method. In the following text, the XRD spectrum obtained from a GIXD measurement may simply be referred to as the XRD spectrum.

[0561] For example, in a quartz glass substrate, the peak shape of the XRD spectrum is nearly symmetrical. On the other hand, in an In-Ga-Zn oxide film with a crystalline structure, the peak shape of the XRD spectrum is asymmetrical. The asymmetrical shape of the XRD spectrum peaks clearly indicates the presence of crystals in the film or substrate. In other words, if the peak shape of the XRD spectrum is not symmetrical, the film or substrate cannot be said to be in an amorphous state.

[0562] Furthermore, the crystalline structure of a film or substrate can be evaluated by the diffraction pattern (also called the nano-beam electron diffraction pattern) observed using nano-beam electron diffraction (NBED). For example, a halo is observed in the diffraction pattern of a quartz glass substrate, confirming that the quartz glass is in an amorphous state. On the other hand, a spot-like pattern is observed in the diffraction pattern of an In-Ga-Zn oxide film deposited at room temperature, rather than a halo. Therefore, it is presumed that the In-Ga-Zn oxide deposited at room temperature is in an intermediate state, neither single-crystal nor polycrystalline, nor amorphous, and cannot be concluded to be in an amorphous state.

[0563] <<Oxide semiconductor structure>> It should be noted that oxide semiconductors may be classified differently from those described above when considering their structure. For example, oxide semiconductors can be divided into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the aforementioned CAAC-OS and nc-OS. Non-single-crystal oxide semiconductors also include polycrystalline oxide semiconductors, pseudo-amorphous oxide semiconductors (a-like OS), and amorphous oxide semiconductors.

[0564] Here, we will explain the details of the CAAC-OS, nc-OS, and a-like OS mentioned above.

[0565] [CAAC-OS] CAAC-OS is an oxide semiconductor having multiple crystalline regions, the c-axis of which is oriented in a specific direction. This specific direction is the thickness direction of the CAAC-OS film, the normal direction to the surface on which the CAAC-OS film is formed, or the normal direction to the surface of the CAAC-OS film. A crystalline region is a region with periodic atomic arrangement. If we consider the atomic arrangement as a lattice arrangement, then a crystalline region is also a region with a aligned lattice arrangement. Furthermore, CAAC-OS has regions where multiple crystalline regions are connected in the ab-plane direction, and these regions may exhibit distortion. Distortion refers to a point in the connected region where the orientation of the lattice arrangement changes between a region with a aligned lattice arrangement and another region with a aligned lattice arrangement. In short, CAAC-OS is an oxide semiconductor that is c-axis oriented and does not exhibit clear orientation in the ab-plane direction.

[0566] Each of the multiple crystalline regions described above is composed of one or more minute crystals (crystals with a maximum diameter of less than 10 nm). When a crystalline region is composed of a single minute crystal, the maximum diameter of that crystalline region is less than 10 nm. When a crystalline region is composed of many minute crystals, the size of that crystalline region may be around several tens of nanometers.

[0567] Furthermore, in In-Ga-Zn oxides, CAAC-OS tends to have a layered crystalline structure (also called a layered structure) consisting of layers containing indium (In) and oxygen (hereinafter referred to as the In layer) and layers containing gallium (Ga), zinc (Zn), and oxygen (hereinafter referred to as the (Ga,Zn) layer). Note that indium and gallium are mutually substitutable. Therefore, the (Ga,Zn) layer may contain indium. Also, the In layer may contain gallium. Also, the In layer may contain zinc. This layered structure can be observed, for example, as a lattice image in high-resolution TEM (Transmission Electron Microscope) images.

[0568] When structural analysis of a CAAC-OS film is performed using an XRD instrument, for example, out-of-plane XRD measurements using θ / 2θ scanning show a peak indicating c-axis orientation at 2θ = 31° or nearby. Note that the position of the c-axis orientation peak (value of 2θ) may vary depending on the type and composition of the metal elements constituting the CAAC-OS.

[0569] Furthermore, for example, multiple bright spots are observed in the electron diffraction pattern of a CAAC-OS film. These spots are observed at point-symmetric positions with respect to the incident electron beam spot (also called the direct spot) that passed through the sample.

[0570] When the crystal region is observed from the specific direction described above, the lattice arrangement within that crystal region is based on a hexagonal lattice, but the unit cell is not necessarily a regular hexagon and may be non-regular hexagonal. Furthermore, the strain may have lattice arrangements such as pentagons or heptagons. Moreover, in CAAC-OS, clear grain boundaries cannot be observed even near the strain. In other words, it can be seen that the formation of grain boundaries is suppressed by the strain in the lattice arrangement. This is thought to be because CAAC-OS can tolerate strain due to factors such as the non-dense arrangement of oxygen atoms in the ab-plane direction and the change in interatomic bond distances due to the substitution of metal atoms.

[0571] A crystal structure in which clear grain boundaries are observed is called a polycrystal. Grain boundaries act as recombination centers, trapping carriers and potentially causing a decrease in transistor on-current and field-effect mobility. Therefore, CAAC-OS, in which clear grain boundaries are not observed, is one of the crystalline oxides with a suitable crystal structure for the semiconductor layer of a transistor. In addition, a structure containing Zn is preferred for the composition of CAAC-OS. For example, In-Zn oxide and In-Ga-Zn oxide are preferred because they suppress the generation of grain boundaries more than In oxide.

[0572] CAAC-OS is an oxide semiconductor with high crystallinity and no clearly defined grain boundaries. Therefore, CAAC-OS is less susceptible to the decrease in electron mobility caused by grain boundaries. Furthermore, since the crystallinity of oxide semiconductors can decrease due to the inclusion of impurities and the generation of defects, CAAC-OS can be said to be an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Consequently, oxide semiconductors containing CAAC-OS have stable physical properties. Therefore, oxide semiconductors containing CAAC-OS are heat resistant and highly reliable. In addition, CAAC-OS is stable even at high temperatures (so-called thermal budget) during the manufacturing process. Therefore, using CAAC-OS in OS transistors allows for greater flexibility in the manufacturing process.

[0573] [nc-OS] nc-OS exhibits periodicity in atomic arrangement in minute regions (e.g., regions between 1 nm and 10 nm, particularly between 1 nm and 3 nm). In other words, nc-OS contains minute crystals. These minute crystals are also called nanocrystals because their size is, for example, between 1 nm and 10 nm, particularly between 1 nm and 3 nm. Furthermore, nc-OS shows no regularity in crystal orientation between different nanocrystals. Therefore, no orientation is observed throughout the film. Consequently, depending on the analytical method, nc-OS may be indistinguishable from a-like OS or amorphous oxide semiconductors. For example, when structural analysis of an nc-OS film is performed using an XRD instrument, no peaks indicating crystallinity are detected in out-of-plane XRD measurements using θ / 2θ scanning. Also, when electron diffraction (also called limited-field electron diffraction) is performed on an nc-OS film using an electron beam with a probe diameter larger than that of the nanocrystals (e.g., 50 nm or larger), a diffraction pattern resembling a halo pattern is observed. On the other hand, when electron diffraction (also called nanobeam electron diffraction) is performed on an nc-OS film using an electron beam with a probe diameter close to or smaller than the size of the nanocrystal (for example, 1 nm to 30 nm), an electron diffraction pattern may be obtained in which multiple spots are observed within a ring-shaped region centered on a direct spot.

[0574] [a-like OS] a-like OS is an oxide semiconductor having a structure between nc-OS and amorphous oxide semiconductors. a-like OS has porous or low-density regions. That is, a-like OS has lower crystallinity compared to nc-OS and CAAC-OS. Also, a-like OS has a higher hydrogen concentration in the film compared to nc-OS and CAAC-OS.

[0575] <<Oxide Semiconductor Composition>> Next, we will explain the details of CAC-OS mentioned above. Note that CAC-OS refers to the material composition.

[0576] [CAC-OS] CAC-OS is a material composition in which, for example, the elements constituting the metal oxide are unevenly distributed in sizes of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or close to that size. In the following, a state in which one or more metal elements are unevenly distributed in a metal oxide, and the regions containing these metal elements are mixed in sizes of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or close to that size, is also referred to as a mosaic or patchy state.

[0577] Furthermore, CAC-OS is a composite metal oxide having a mosaic-like structure formed by the separation of the material into a first region and a second region, with the first region distributed within the film (hereinafter also referred to as a cloud-like structure). In other words, CAC-OS is a composite metal oxide having a structure in which the first region and the second region are mixed.

[0578] Here, the atomic ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in In-Ga-Zn oxide are denoted as [In], [Ga], and [Zn], respectively. For example, in the CAC-OS of In-Ga-Zn oxide, the first region is the region where [In] is greater than the [In] in the composition of the CAC-OS film. The second region is the region where [Ga] is greater than the [Ga] in the composition of the CAC-OS film. Alternatively, for example, the first region is the region where [In] is greater than the [In] in the second region, and [Ga] is smaller than the [Ga] in the second region. The second region is the region where [Ga] is greater than the [Ga] in the first region, and [In] is smaller than the [In] in the first region.

[0579] Specifically, the first region described above is a region whose main components are indium oxide, indium zinc oxide, etc. The second region described above is a region whose main components are gallium oxide, gallium zinc oxide, etc. In other words, the first region can be rephrased as a region whose main component is In. Similarly, the second region can be rephrased as a region whose main component is Ga.

[0580] Furthermore, a clear boundary may not be observed between the first region and the second region described above.

[0581] Furthermore, CAC-OS in In-Ga-Zn oxide refers to a material composition containing In, Ga, Zn, and O, in which regions with Ga as the main component and regions with In as the main component are arranged in a mosaic-like manner, with these regions existing randomly. Therefore, it is presumed that CAC-OS has a structure in which metal elements are unevenly distributed.

[0582] CAC-OS can be formed, for example, by sputtering under conditions where the substrate is not heated. When forming CAC-OS by sputtering, one or more gases selected from inert gases (typically argon), oxygen gas, and nitrogen gas may be used as the deposition gas. Furthermore, a lower ratio of the oxygen gas flow rate to the total deposition gas flow rate during deposition is preferable. For example, the ratio of the oxygen gas flow rate to the total deposition gas flow rate during deposition should be 0% or more and less than 30%, preferably 0% or more and 10% or less.

[0583] Furthermore, for example, in the case of CAC-OS in In-Ga-Zn oxide, EDX mapping obtained using energy dispersive X-ray spectroscopy (EDX) confirms that it has a structure in which regions mainly composed of In (first region) and regions mainly composed of Ga (second region) are unevenly distributed and mixed.

[0584] Here, the first region is a region with higher conductivity compared to the second region. In other words, the conductivity of the metal oxide is exhibited when carriers flow through the first region. Therefore, a high field-effect mobility (μ) can be achieved when the first region is distributed in a cloud-like manner within the metal oxide.

[0585] On the other hand, the second region is a region with higher insulating properties compared to the first region. In other words, the distribution of the second region within the metal oxide can suppress leakage current.

[0586] Therefore, when CAC-OS is used in a transistor, the conductivity due to the first region and the insulation due to the second region work complementaryly to give CAC-OS a switching function (on / off function). In other words, CAC-OS has conductive function in part of the material, insulating function in part of the material, and semiconductor function as a whole. By separating the conductive function and the insulating function, both functions can be maximized. Therefore, by using CAC-OS in a transistor, a high on-current (I on ), high field-effect mobility (μ), and good switching operation can be achieved.

[0587] Furthermore, transistors using CAC-OS offer high reliability. Therefore, CAC-OS is ideal for various semiconductor devices, including display devices.

[0588] Oxide semiconductors can take on diverse structures, each possessing different properties. One embodiment of the present invention may include two or more of the following: amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, CAC-OS, nc-OS, and CAAC-OS.

[0589] <Transistors containing oxide semiconductors> Next, we will explain the case where the above oxide semiconductor is used in a transistor.

[0590] By using the above-mentioned oxide semiconductor in transistors, it is possible to realize transistors with high field-effect mobility. Furthermore, it is possible to realize highly reliable transistors.

[0591] It is preferable to use an oxide semiconductor with a low carrier concentration for the transistor. For example, the carrier concentration of an oxide semiconductor is 1 × 10⁻⁶. 17 cm -3 The following is preferably 1 × 10 15 cm -3 More preferably 1 × 10 13 cm -3More preferably 1 × 10 11 cm -3 More preferably 1 × 10 10 cm -3 It is less than 1 × 10 -9 cm -3 This concludes the explanation. Furthermore, when lowering the carrier concentration of an oxide semiconductor film, the impurity concentration in the oxide semiconductor film should be lowered to reduce the defect level density. In this specification, a low impurity concentration and low defect level density are referred to as high-purity intrinsic or substantially high-purity intrinsic. Note that oxide semiconductors with low carrier concentrations are sometimes referred to as high-purity intrinsic or substantially high-purity intrinsic oxide semiconductors.

[0592] Furthermore, oxide semiconductor films that are highly intrinsic or substantially highly intrinsic may have a low trap level density due to their low defect level density.

[0593] Furthermore, charges trapped in the trap levels of oxide semiconductors can take a long time to disappear, sometimes behaving like fixed charges. Therefore, transistors in which channel formation regions are formed in oxide semiconductors with a high trap level density may exhibit unstable electrical properties.

[0594] Therefore, reducing the impurity concentration in the oxide semiconductor is effective in stabilizing the electrical characteristics of a transistor. Furthermore, in order to reduce the impurity concentration in the oxide semiconductor, it is preferable to also reduce the impurity concentration in adjacent films. Examples of impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, and silicon. Note that impurities in an oxide semiconductor refer to elements other than the main components that make up the oxide semiconductor. For example, elements with a concentration of less than 0.1 atomic percent can be considered impurities.

[0595] <Impurities> Here, we will explain the effects of various impurities in oxide semiconductors.

[0596] In oxide semiconductors, the presence of silicon or carbon, which are Group 14 elements, leads to the formation of defect levels in the oxide semiconductor. Therefore, the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon near the interface with the oxide semiconductor (concentration obtained by secondary ion mass spectrometry (SIMS)) are compared by 2 × 10⁻⁶. 18 atoms / cm 3 The following is preferably 2 × 10 17 atoms / cm 3 The following applies:

[0597] Furthermore, if an oxide semiconductor contains alkali metals or alkaline earth metals, it may form defect levels and generate carriers. Therefore, transistors using oxide semiconductors containing alkali metals or alkaline earth metals tend to exhibit normally-on characteristics. For this reason, the concentration of alkali metals or alkaline earth metals in the oxide semiconductor obtained by SIMS should be set to 1 × 10⁻⁶. 18 atoms / cm 3 The following is preferably 2 × 10 16 atoms / cm 3 Do the following:

[0598] Furthermore, in oxide semiconductors, the presence of nitrogen generates electrons, which act as carriers, increasing the carrier concentration and making it easier for the semiconductor to become n-type. As a result, transistors using oxide semiconductors containing nitrogen tend to exhibit normally-on characteristics. Alternatively, the presence of nitrogen in oxide semiconductors can lead to the formation of trap levels. As a result, the electrical properties of the transistor may become unstable. For this reason, the nitrogen concentration in oxide semiconductors obtained by SIMS should be set to 5 × 10⁻⁶. 19 atoms / cm 3 Less than 5 × 10 18 atoms / cm 3 More preferably 1 × 10 18 atoms / cm 3 More preferably 5 × 10 17 atoms / cm 3 Do the following:

[0599] Furthermore, hydrogen contained in oxide semiconductors can react with oxygen bonded to metal atoms to form water, potentially creating oxygen vacancies. Hydrogen can then fill these vacancies, generating electrons as carriers. Additionally, some of the hydrogen can combine with oxygen bonded to metal atoms to generate electrons. Therefore, transistors using oxide semiconductors containing hydrogen tend to exhibit normally-on characteristics. For this reason, it is preferable to reduce the hydrogen content in oxide semiconductors as much as possible. Specifically, the hydrogen concentration in the oxide semiconductor obtained by SIMS should be 1 × 10⁻⁶. 20 atoms / cm 3 Less than 1 × 10 19 atoms / cm 3 Less than 5x10 18 atoms / cm 3 Less than 1 × 10 18 atoms / cm 3 Make it less than.

[0600] By using an oxide semiconductor with sufficiently reduced impurities in the channel formation region of a transistor, stable electrical characteristics can be provided.

[0601] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0602] (Embodiment 9) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to Figures 25 to 28.

[0603] The electronic device of this embodiment has a display device according to one aspect of the present invention. The display device according to one aspect of the present invention is easily made high-definition, high-resolution, and large-scale. Therefore, the display device according to one aspect of the present invention can be used in the display units of various electronic devices.

[0604] Furthermore, since the display device according to one aspect of the present invention can be manufactured at a low cost, the manufacturing cost of electronic devices can be reduced.

[0605] Examples of electronic devices include television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as other electronic devices with relatively large screens, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, and audio playback devices.

[0606] In particular, a display device according to one aspect of the present invention can be used suitably in electronic devices having a relatively small display area because it can increase resolution. Examples of such electronic devices include information terminals (wearable devices) such as wristwatches and bracelets, as well as wearable devices that can be worn on the head, such as VR devices such as head-mounted displays and AR devices such as glasses. Wearable devices also include devices for SR and MR.

[0607] A display device according to one aspect of the present invention preferably has an extremely high resolution such as HD (1280 x 720 pixels), FHD (1920 x 1080 pixels), WQHD (2560 x 1440 pixels), WQXGA (2560 x 1600 pixels), 4K2K (3840 x 2160 pixels), or 8K4K (7680 x 4320 pixels). In particular, a resolution of 4K2K, 8K4K, or higher is preferred. Furthermore, the pixel density (resolution) of the display device according to one aspect of the present invention is preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 7000 ppi or more. By using display devices with such high resolution or detail, it becomes possible to enhance the sense of presence and depth in personal electronic devices such as portable or home-use devices.

[0608] The electronic device of this embodiment can be incorporated along the curved surfaces of the interior or exterior walls of a house or building, or the interior or exterior of an automobile.

[0609] The electronic device in this embodiment may have an antenna. By receiving signals with the antenna, the display unit can display images and information. Furthermore, if the electronic device has an antenna and a secondary battery, the antenna may be used for contactless power transmission.

[0610] The electronic device of this embodiment may have sensors (including those with the function of detecting, detecting, or measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation).

[0611] The electronic device of this embodiment can have a variety of functions. For example, it can have a function to display various information (still images, videos, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, a function to execute various software (programs), a wireless communication function, a function to read programs or data recorded on a recording medium, and so on.

[0612] The electronic device 6500 shown in Figure 25A is a portable information terminal that can be used as a smartphone.

[0613] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The display unit 6502 has a touch panel function.

[0614] A display device according to one aspect of the present invention can be applied to the display unit 6502.

[0615] Figure 25B is a schematic cross-sectional view of the housing 6501, including the end on the microphone 6506 side.

[0616] A light-transmitting protective member 6510 is provided on the display side of the housing 6501, and the display panel 6511, optical member 6512, touch sensor panel 6513, printed circuit board 6517, battery 6518, etc. are arranged in the space enclosed by the housing 6501 and the protective member 6510.

[0617] The protective member 6510 is fixed to the display panel 6511, the optical member 6512, and the touch sensor panel 6513 by an adhesive layer (not shown).

[0618] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back, and the FPC 6515 is connected to this folded portion. IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals provided on the printed circuit board 6517.

[0619] A flexible display (a display device with flexibility) according to one embodiment of the present invention can be applied to the display panel 6511. As a result, an extremely lightweight electronic device can be realized. Furthermore, because the display panel 6511 is extremely thin, a large-capacity battery 6518 can be installed while keeping the thickness of the electronic device low. In addition, by folding back a part of the display panel 6511 and placing the connection part with the FPC 6515 on the back of the pixel area, an electronic device with a narrow bezel can be realized.

[0620] Figure 26A shows an example of a television system. The television system 7100 has a display unit 7000 incorporated into a housing 7101. Here, the housing 7101 is shown supported by a stand 7103.

[0621] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0622] The television device 7100 shown in Figure 26A can be operated using the operation switches on the housing 7101 and a separate remote control unit 7111. Alternatively, the display unit 7000 may be equipped with a touch sensor, and the television device 7100 can be operated by touching the display unit 7000 with a finger or the like. The remote control unit 7111 may have a display unit that displays information output from the remote control unit 7111. Channels and volume can be controlled and the image displayed on the display unit 7000 can be controlled using the operation keys or touch panel on the remote control unit 7111.

[0623] The television system 7100 is configured to include a receiver and a modem. The receiver can receive general television broadcasts. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0624] Figure 26B shows an example of a notebook personal computer. The notebook personal computer 7200 has a casing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. A display unit 7000 is incorporated into the casing 7211.

[0625] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0626] Figures 26C and 26D show examples of digital signage.

[0627] The digital signage 7300 shown in Figure 26C comprises a housing 7301, a display unit 7000, and a speaker 7303, etc. Furthermore, it may include LED lamps, operation keys (including a power switch or operation switches), connection terminals, various sensors, a microphone, etc.

[0628] Figure 26D shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is provided along the curved surface of the column 7401.

[0629] In Figures 26C and 26D, a display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0630] The larger the display area 7000, the more information can be provided at once. Furthermore, a larger display area 7000 is more eye-catching, which can, for example, enhance the effectiveness of advertising.

[0631] Applying a touch panel to the display unit 7000 is preferable because it not only allows images or videos to be displayed on the display unit 7000, but also enables intuitive operation by the user. Furthermore, when used for purposes such as providing route information or traffic information, intuitive operation can enhance usability.

[0632] Furthermore, as shown in Figures 26C and 26D, it is preferable that the digital signage 7300 or digital signage 7400 can be linked wirelessly with an information terminal 7311 or information terminal 7411 such as a smartphone owned by the user. For example, the advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or information terminal 7411. Also, the display on the display unit 7000 can be switched by operating the information terminal 7311 or information terminal 7411.

[0633] Furthermore, the digital signage 7300 or digital signage 7400 can be used to run games using the screen of the information terminal 7311 or information terminal 7411 as the control device (controller). This allows a large number of users to participate in and enjoy the game simultaneously.

[0634] Figure 27A shows the external appearance of the camera 8000 with the viewfinder 8100 attached.

[0635] The camera 8000 includes a housing 8001, a display unit 8002, operation buttons 8003, a shutter button 8004, etc. A detachable lens 8006 is also attached to the camera 8000. The lens 8006 and the housing of the camera 8000 may be integrated into a single unit.

[0636] Camera 8000 can take an image by pressing the shutter button 8004 or by touching the display unit 8002, which functions as a touch panel.

[0637] The housing 8001 has a mount with electrodes, and in addition to the viewfinder 8100, a strobe device and the like can be connected to it.

[0638] The viewfinder 8100 includes a housing 8101, a display unit 8102, buttons 8103, etc.

[0639] The housing 8101 is attached to the camera 8000 by a mount that engages with the camera 8000's mount. The viewfinder 8100 can display images and other data received from the camera 8000 on the display unit 8102.

[0640] Button 8103 functions as a power button, etc.

[0641] A display device according to one embodiment of the present invention can be applied to the display unit 8002 of the camera 8000 and the display unit 8102 of the viewfinder 8100. The camera 8000 may also have a built-in viewfinder.

[0642] Figure 27B shows the external appearance of the head-mounted display 8200.

[0643] The head-mounted display 8200 includes a mounting section 8201, lenses 8202, a main unit 8203, a display unit 8204, a cable 8205, etc. The mounting section 8201 also has a built-in battery 8206.

[0644] Cable 8205 supplies power from battery 8206 to main unit 8203. Main unit 8203 is equipped with a wireless receiver and can display received video information on display unit 8204. In addition, main unit 8203 is equipped with a camera and can use information about the user's eyeball or eyelid movements as an input means.

[0645] Furthermore, the attachment unit 8201 may be provided with multiple electrodes at a position that touches the user, capable of detecting the current flowing in accordance with the user's eye movements, and may have a function to recognize the user's gaze. It may also have a function to monitor the user's pulse rate based on the current flowing through the electrodes. In addition, the attachment unit 8201 may have various sensors such as a temperature sensor, a pressure sensor, and an acceleration sensor, and may have a function to display the user's biometric information on the display unit 8204, or a function to change the image displayed on the display unit 8204 in accordance with the user's head movements.

[0646] A display device according to one aspect of the present invention can be applied to the display unit 8204.

[0647] Figures 27C to 27E show the external appearance of the head-mounted display 8300. The head-mounted display 8300 includes a housing 8301, a display unit 8302, a band-shaped fixing device 8304, and a pair of lenses 8305.

[0648] The user can view the display on the display unit 8302 through the lens 8305. It is preferable to position the display unit 8302 in a curved shape, as this allows the user to experience a greater sense of presence. Furthermore, by viewing different images displayed in different areas of the display unit 8302 through the lens 8305, three-dimensional display using parallax can be performed. Note that the configuration is not limited to a single display unit 8302; two display units 8302 may be provided, with one display unit for each of the user's eyes.

[0649] A display device according to one embodiment of the present invention can be applied to the display unit 8302. This display device according to one embodiment of the present invention can achieve extremely high resolution. For example, even when the display is magnified and viewed using the lens 8305 as shown in Figure 27E, the pixels are difficult for the user to see. In other words, the display unit 8302 can be used to allow the user to view highly realistic images.

[0650] Figure 27F shows the external appearance of a goggle-type head-mounted display 8400. The head-mounted display 8400 has a pair of housings 8401, a mounting part 8402, and a cushioning member 8403. A display unit 8404 and a lens 8405 are provided inside each of the pair of housings 8401. By displaying different images on the pair of display units 8404, a three-dimensional display using parallax can be achieved.

[0651] The user can view the display unit 8404 through the lens 8405. The lens 8405 has a focus adjustment mechanism and its position can be adjusted according to the user's eyesight. The display unit 8404 is preferably a square or a horizontally elongated rectangle. This can enhance the sense of realism.

[0652] The mounting portion 8402 is preferably adjustable to the size of the user's face and has plasticity and elasticity to prevent it from slipping off. Furthermore, it is preferable that a part of the mounting portion 8402 has a vibration mechanism that functions as a bone conduction earphone. This eliminates the need for separate audio equipment such as earphones or speakers, allowing users to enjoy video and audio simply by wearing the device. The housing 8401 may also have a function to output audio data via wireless communication.

[0653] The mounting portion 8402 and the cushioning member 8403 are parts that come into contact with the user's face (forehead, cheeks, etc.). By ensuring that the cushioning member 8403 is in close contact with the user's face, light leakage can be prevented, thereby enhancing the sense of immersion. It is preferable to use a soft material for the cushioning member 8403 so that it adheres closely to the user's face when the user wears the head-mounted display 8400. For example, materials such as rubber, silicone rubber, urethane, and sponge can be used. Furthermore, if the surface of a sponge or similar material is covered with cloth, leather (genuine leather or synthetic leather), gaps are less likely to form between the user's face and the cushioning member 8403, effectively preventing light leakage. In addition, using such materials is preferable because it feels good against the skin and does not make the user feel cold when worn in cold seasons. It is preferable that the components that come into contact with the user's skin, such as the cushioning member 8403 or the mounting portion 8402, are removable, as this makes cleaning or replacement easier.

[0654] The electronic equipment shown in Figures 28A to 28F includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or operation switch), connection terminals 9006, sensors 9007 (including functions for detecting, detecting, or measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation), a microphone 9008, etc.

[0655] The electronic devices shown in Figures 28A to 28F have various functions. For example, they may have functions to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date or time, a function to control processing by various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. However, the functions of electronic devices are not limited to these and can have various functions. Electronic devices may have multiple display units. Furthermore, electronic devices may be equipped with a camera, etc., and have functions to capture still images or videos and save them to a recording medium (external or built into the camera), a function to display the captured images on a display unit, etc.

[0656] A display device according to one embodiment of the present invention can be applied to the display unit 9001.

[0657] The details of the electronic equipment shown in Figures 28A to 28F will be explained below.

[0658] Figure 28A is a perspective view showing a personal digital assistant (PDA) 9101. The PDA 9101 can be used, for example, as a smartphone. The PDA 9101 may also be equipped with a speaker 9003, connection terminals 9006, sensors 9007, etc. The PDA 9101 can also display text and image information on multiple surfaces. Figure 28A shows an example where three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming emails, SNS messages, and phone calls, the subject of emails and SNS messages, the sender's name, date and time, battery level, and antenna signal strength. Alternatively, icons 9050 or the like may be displayed in the location where the information 9051 is displayed.

[0659] Figure 28B is a perspective view showing the personal digital assistant (PDA) 9102. The PDA 9102 has the function of displaying information on three or more sides of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, a user can check information 9053, which is displayed in a position that can be observed from above the PDA 9102, while the PDA 9102 is stored in the breast pocket of their clothing. The user can check the display without taking the PDA 9102 out of their pocket and decide, for example, whether or not to answer a call.

[0660] Figure 28C is a perspective view showing a wristwatch-type personal information terminal 9200. The personal information terminal 9200 can be used, for example, as a smartwatch (registered trademark). The display unit 9001 has a curved display surface, allowing it to display information along the curved surface. The personal information terminal 9200 can also be used for hands-free calls by communicating with, for example, a wireless communication headset. Furthermore, the personal information terminal 9200 can transmit data to other information terminals and be charged via a connection terminal 9006. Charging may be performed by wireless power supply.

[0661] Figures 28D to 28F are perspective views showing a foldable portable information terminal 9201. Figure 28D shows the portable information terminal 9201 in an unfolded state, Figure 28F shows it in a folded state, and Figure 28E shows a perspective view of the state in between, transitioning from one of Figures 28D or 28F to the other. The portable information terminal 9201 offers excellent portability in its folded state and excellent readability of the display due to its seamless, wide display area in its unfolded state. The display unit 9001 of the portable information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm to 150 mm.

[0662] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., can be appropriately combined with other configuration examples or drawings, etc., at least in part.

[0663] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part. [Explanation of Symbols]

[0664] 100: Display device, 100C: Display device, 100D: Display device, 100E: Display device, 100F: Display device, 100G: Display device, 101: Layer, 105: Insulating layer, 110: Pixel, 110a: Sub-pixel, 110b: Sub-pixel, 110c: Sub-pixel, 110S: Sub-pixel, 111: Pixel electrode, 111a: Pixel electrode, 111b: Pixel electrode, 111c: Pixel electrode, 111C: Connecting electrode, 111S: Pixel electrode, 112: Organic layer, 112a: Organic layer, 112b: Organic layer, 112c: Organic layer, 112W: Organic layer, 113: Common electrode, 114: Organic layer, 115: Organic layer, 116: Yes 120: Slit, 121: Protective layer, 122: Resin layer, 125: Insulating layer, 125f: Insulating film, 126: Resin layer, 128: Substrate, 129: Colored layer, 129a: Colored layer, 129b: Colored layer, 129c: Colored layer, 129d: Black matrix, 130: Connection part, 135a: Layer, 135b: Layer, 135B: Layer, 135c: Layer, 135G: Layer, 135R: Layer, 135S: Layer, 136: Substrate, 137: Substrate, 140: Light-emitting element, 140a: Light-emitting element, 140b: Light-emitting element, 140c: Light-emitting element, 140S: Photodetector, 140S1: Photodetector, 140S2: Photodetector Optical element, 143: Resist mask, 144: Sacrificial film, 145: Sacrificial layer, 146: Sacrificial film, 147: Sacrificial layer, 151S: FMM, 151W: FMM, 155: Organic layer, 161: Conductive layer, 162: Conductive layer, 163: Resin layer, 200: Display panel, 201: Substrate, 202: Substrate, 203: Functional layer, 211: Light-emitting element, 211B: Light-emitting element, 211G: Light-emitting element, 211R: Light-emitting element, 211W: Light-emitting element, 212: Photodetector, 218: Area, 220: Finger, 221: Contact area, 222: Fingerprint, 223: Imaging area, 225: Stylus, 226: Trajectory, 240: Capacitance, 241: conductive layer, 242: transistor, 243: insulating layer, 244: connector, 245: conductive layer, 251: conductive layer, 252: conductive layer, 254: insulating layer, 255a: insulating layer, 255b: insulating layer, 256: plug, 258: transistor, 259: transistor, 260: transistor, 261: insulating layer, 262: insulating layer, 263: insulating layer, 264: insulating layer, 265: insulating layer, 268: insulating layer, 271: plug, 272a: conductive layer, 272b: conductive layer, 273: conductive layer, 274: plug, 274a: conductive layer, 274b: conductive layer, 275: insulating layer, 278: connector,280: Display module, 281: Semiconductor layer, 281i: Channel formation region, 281n: Low resistance region, 282: Circuit section, 283: Pixel circuit section, 283a: Pixel circuit, 284: Pixel section, 284a: Pixel, 285: Terminal section, 286: Wiring section, 288: Display section, 290: FPC, 291: Substrate, 292: Connection layer, 293: Substrate, 294: Insulating layer, 301: Substrate, 301A: Substrate, 301B: Substrate, 310: Transistor, 310A: Transistor, 310B: Transistor, 311: Conductive layer, 312: Low resistance region, 313: Insulating layer, 314: Insulating layer, 315: Element isolation layer, 320: Transistor, 321: Semiconductor layer, 323: Insulating layer, 324: Conductive layer, 325: Conductive layer, 326: Insulating layer, 327: Conductive layer, 328: Insulating layer, 329: Insulating layer, 331: Substrate, 332: Insulating layer, 335: Insulating layer, 336: Insulating layer, 341: Conductive layer, 342: Conductive layer, 343: Plug, 344: Insulating layer, 345: Insulating layer, 346: Insulating layer, 347: Bump, 348: Adhesive layer, 400: Display device, 411a: Conductive layer, 411b: Conductive layer, 411c: Conductive layer, 412b: EL layer, 412S: PD layer, 413: Common electrode, 414: Organic layer, 4 15b: Layer, 415S: Layer, 416: Protective layer, 417: Light-shielding layer, 418: Coloring layer, 421: Insulating layer, 422: Resin layer, 430b: Light-emitting element, 440: Light-receiving element, 442: Adhesive layer, 451: Substrate, 452: Substrate, 453: Substrate, 454: Substrate, 455: Adhesive layer, 462: Display unit, 464: Circuit, 465: Wiring, 466: Conductive layer, 471: Conductive layer, 472: FPC, 473: IC, 500: Display device, 501: Electrode, 502: Electrode, 512W: Light-emitting unit, 521: Layer, 522: Layer, 523Q_1: Light-emitting layer, 523Q_2: Light-emitting layer, 523Q_3: Light-emitting layer , 524: layer, 525: layer, 526: active layer, 540: protective layer, 545B: colored layer, 545G: colored layer, 545R: colored layer, 550S: light receiving element, 550W: light receiving unit, 555: light receiving unit, 701: substrate, 702: display unit, 702L: display unit, 702R: display unit, 6500: electronic equipment, 6501: housing, 6502: display unit, 6503: power button, 6504: button, 6505: speaker, 6506: microphone, 6507: camera, 6508: light source, 6510: protective member, 6511: display panel, 6512: optical member, 6513: touch sensor panel,6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 7000: Display unit, 7100: Television equipment, 7101: Enclosure, 7103: Stand, 7111: Remote control unit, 7200: Notebook personal computer, 7211: Enclosure, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital scale Signage, 7301: Housing, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 8000: Camera, 8001: Housing, 8002: Display unit, 8003: Operation buttons, 8004: Shutter button, 8006: Lens, 8100: Viewfinder, 8101: Housing, 8102: Display unit, 8103: Buttons, 8200: Head mount Head display, 8201: mounting part, 8202: lens, 8203: main unit, 8204: display unit, 8205: cable, 8206: battery, 8300: head-mounted display, 8301: housing, 8302: display unit, 8304: fixing device, 8305: lens, 8400: head-mounted display, 8401: housing, 8402: mounting part, 8403: cushioning material, 8404: display unit, 84 05: Lens, 9000: Housing, 9001: Display unit, 9003: Speaker, 9005: Operation keys, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Personal digital assistant, 9102: Personal digital assistant, 9200: Personal digital assistant, 9201: Personal digital assistant,

Claims

1. A light-emitting element comprising a first pixel electrode, a first organic layer on the first pixel electrode, a light-emitting layer on the first organic layer, a second organic layer on the light-emitting layer, a common layer on the second organic layer, and a common electrode on the common layer, A display device having a light-receiving element comprising: a second pixel electrode; a third organic layer on the second pixel electrode; a photoelectric conversion layer on the third organic layer; a fourth organic layer on the photoelectric conversion layer; a common layer on the fourth organic layer; and a common electrode on the common layer, The region between the light-emitting element and the light-receiving element includes a first layer, a second layer, and a resin layer. The first layer has a region in contact with the upper surface of the light-emitting layer and is provided separated from the photoelectric conversion layer via the resin layer. A display device wherein the second layer has a region in contact with the upper surface of the first organic layer and is provided separated from the light-emitting layer and the resin layer.

2. In claim 1, The first layer has a portion that overlaps with the second pixel electrode and the second organic layer. A display device wherein the second layer has a portion that overlaps with the first pixel electrode and the first organic layer.

3. In claim 1 or claim 2, A display device wherein the upper surface of the resin layer has a region in contact with the common layer.

Images