Deposition mask for OLED pixel deposition

Abstract

This invention provides a deposition mask for OLED pixel deposition that offers improved deposition efficiency and rigidity. [Solution] The vapor deposition mask includes a metal plate including a vapor deposition region and a non-vapor deposition region, the vapor deposition region includes at least one effective portion, the effective portion includes a plurality of unit through holes, each unit through hole includes a small area hole formed on the first surface of the metal plate, a large area hole formed on the second surface of the metal plate, and a connecting portion connecting the small area hole and the large area hole, each unit through hole includes a first width defined by the width in the first direction and a second width defined by the width in the second direction, the size of the first width and the size of the second width are different, ribs are arranged between adjacent unit through holes in the first direction, and island portions are arranged between adjacent unit through holes in the second direction, and in each unit through hole, the height of the large area hole in the second direction is greater than the height of the large area hole in the first direction, and the height of the small area hole in the unit through hole in the second direction is less than the height of the small area hole in the unit through hole in the first direction.

Description

Technical Field

[0001] The embodiments relate to a deposition mask for OLED pixel deposition.

Background Art

[0002] Display devices are applied to various devices. For example, the display device is applied to small devices such as smartphones or tablet PCs. Or, the display device is applied to large devices such as TVs, monitors or public displays (PDs). Recently, the demand for ultra-high definition (UHD) with a resolution of 500 pixels per inch (PPI) or higher has been increasing. Accordingly, display devices with high resolution are being applied to small and large devices.

[0003] Display devices are classified into LCDs (Liquid Crystal Displays) and OLEDs (Organic Light Emitting Diodes) according to the driving method.

[0004] The LCD is a display device driven using liquid crystal. Also, the OLED is a display device driven using organic substances.

[0005] The OLED can express an infinite contrast ratio, has a response speed more than 1000 times faster than that of the LCD, and has an excellent viewing angle. Accordingly, the OELD has been attracting attention as a display device that can replace the LCD.

[0006] The OLED includes an emissive layer. The emissive layer includes an organic material. The organic material is deposited onto a substrate using a deposition mask. The deposition mask may be an open mask (OM) or a fine metal mask (FMM). A deposition pattern corresponding to the pattern formed on the deposition mask is formed on the substrate. As a result, the deposition pattern can function as a pixel.

[0007] The open mask is a thin plate used in the manufacturing of OLEDs to form a deposition pattern only at specific locations. The open mask is used in the deposition process to form the light-emitting layer on the backplane after the backplane has been completed during the display manufacturing process. In other words, the open mask is a mask that has no obstructing areas within the range in which the display operates in order to deposit material over the entire surface of the display. Therefore, the open mask is used when depositing a light-emitting layer with a single color of light-emitting material.

[0008] On the other hand, fine metal masks are used to give subpixels in the light-emitting layer different colors. Therefore, the fine metal masks contain ultrafine holes. The process using the fine metal masks requires many stages of deposition. Therefore, the process requires precise alignment. As a result, the process using the fine metal masks is more difficult than the process using open masks.

[0009] When the light-emitting layer of the OLED is deposited using an open mask, only one color light-emitting layer is formed. Therefore, a separate color filter (C / F) is required to realize a variety of colors. On the other hand, when the fine metal mask is used, an RGB light-emitting layer can be formed. Therefore, a separate color filter is not required. In other words, the technology using the fine metal mask is difficult. However, compared to the method using an open mask, it does not require a filter to block light, so the light efficiency is better.

[0010] The fine metal mask is generally manufactured from an Invar alloy metal sheet containing iron (Fe) and nickel (Ni). Through-holes are formed on one and the other surface of the metal sheet, penetrating both surfaces. These through-holes are formed at positions corresponding to the pixel pattern. As a result, red, green, and blue organic materials are deposited onto the substrate through the through-holes in the metal sheet. This forms a pixel pattern on the substrate.

[0011] On the other hand, the fine metal mask includes small-area holes formed on one side of the metal plate and large-area holes formed on the other side of the metal plate. The small-area holes and the large-area holes are connected by a connecting portion, thereby forming the through-hole.

[0012] The organic material is sprayed in the direction of the fine metal mask. The organic material is deposited onto the deposition substrate using the large-area pores as an inlet and the small-area pores as an outlet.

[0013] The angle of the inner surface of the large-area pores differs depending on the direction of the through-hole. As a result, if the height of the small-area pores is formed to be the same in all directions, the efficiency of organic material deposition decreases.

[0014] Furthermore, if the height of the small area holes is formed to differ in each direction, the strength of the fine metal mask will differ in each direction. As a result, the fine metal mask may warp in one direction.

[0015] Therefore, there is a need for a new structure of vapor deposition mask and a method for manufacturing the same that can solve the above-mentioned problems. [Overview of the project] [Problems that the invention aims to solve]

[0016] The example provides a deposition mask for OLED pixel deposition that has improved deposition efficiency and rigidity. [Means for solving the problem]

[0017] The deposition mask according to the embodiment includes a metal plate including a deposition region and a non-deposition region, the deposition region includes at least one effective portion, the effective portion includes a plurality of unit through-holes, the unit through-holes include small area holes formed on a first surface of the metal plate, large area holes formed on a second surface of the metal plate, and connecting portions connecting the small area holes and the large area holes, the unit through-holes include a first width defined by the width in a first direction and a second width defined by the width in a second direction, the size of the first width and the size of the second width are different, ribs are arranged between adjacent unit through-holes in the first direction, and island portions are arranged between adjacent unit through-holes in the second direction, the height of the large area holes in the unit through-holes in the second direction is greater than the height of the large area holes in the first direction, and the height of the small area holes in the unit through-holes in the second direction is smaller than the height of the small area holes in the unit through-holes in the first direction. [Effects of the Invention]

[0018] The deposition mask according to the first embodiment includes a unit through-hole. The unit through-hole has different widths in the first and second directions.

[0019] As a result, the large-area holes of the unit through-holes have different heights and inclination angles in the first and second directions. This reduces the deposition efficiency of the deposition mask. Furthermore, because the strength of the deposition mask differs depending on the direction, the deposition mask may warp in one direction.

[0020] Therefore, the height of the small-area holes is made to differ depending on the direction. Specifically, the height of the small-area holes is greater in the direction in which the height of the large-area holes is smaller. Also, the height of the small-area holes is smaller in the direction in which the height of the large-area holes is larger. This prevents the strength of the deposition mask from differing depending on the direction.

[0021] Further, the height of the small-area holes is large in the direction in which the inclination angle of the large-area holes is small. Also, the height of the small-area holes is small in the direction in which the inclination angle of the large-area holes is large. Thereby, the deposition uniformity of the deposition mask is improved.

[0022] Therefore, the deposition mask according to the first embodiment has improved deposition efficiency and reliability.

[0023] The deposition mask according to the second embodiment includes unit through holes. The unit through holes have different widths from each other in the first direction and the second direction. Also, ribs having different widths from each other in the first direction and the second direction are arranged between adjacent unit through holes.

[0024] Thereby, the deposition uniformity of the deposition mask is reduced. Also, the strength of the deposition mask becomes different depending on the direction.

[0025] Therefore, the heights of the small-area holes and the large-area holes are made different depending on the direction. Specifically, the height of the large-area holes is small in the direction in which the width of the ribs is small. Also, the height of the small-area holes is large in the direction in which the width of the ribs is small. Also, the height of the large-area holes is large in the direction in which the width of the ribs is large. Also, the height of the small-area holes is small in the direction in which the width of the ribs is large.

[0026] Thereby, it is possible to prevent the strength of the deposition mask from becoming different depending on the direction. Also, a sufficient amount of organic substances can be accommodated in the large-area holes with a large width of the ribs.

[0027] Therefore, the deposition mask according to the second embodiment has improved deposition efficiency and reliability.

[0028] The mask for vapor deposition according to the third embodiment includes unit through-holes. The unit through-holes have different widths in the third direction and the fourth direction. Also, island portions having different widths and / or areas in the third direction and the fourth direction are arranged between adjacent unit through-holes.

[0029] As a result, the deposition uniformity of the mask for vapor deposition decreases. Also, the strength of the mask for vapor deposition becomes different depending on the direction.

[0030] Therefore, the heights of the small-area holes and the large-area holes are made different depending on the direction. Specifically, the height of the large-area hole is small in the direction where the width and / or area of the island portion is small. Also, the height of the small-area hole is large in the direction where the width and / or area of the island portion is small. Further, the height of the large-area hole is large in the direction where the width and / or area of the island portion is large. Also, the height of the small-area hole is small in the direction where the width and / or area of the island portion is large.

[0031] Thereby, it is possible to prevent the strength of the mask for vapor deposition from becoming different depending on the direction. Also, a sufficient amount of the organic substance can be accommodated in the large-area holes where the width and / or area of the island portion is large.

[0032] Therefore, the mask for vapor deposition according to the third embodiment has improved deposition efficiency and reliability.

Brief Description of the Drawings

[0033] [Figure 1] FIG. 1 is a drawing illustrating the connection of the mask for vapor deposition and the frame according to the embodiment. [Figure 2] FIG. 2 is a cross-sectional view of an organic vapor deposition apparatus including the mask for vapor deposition according to the embodiment. [Figure 3] FIG. 3 is a drawing illustrating that a deposition pattern is formed on a deposition substrate through the through-holes of the mask for vapor deposition according to the embodiment. [Figure 4]Figure 4 is a plan view of the deposition mask according to the example. [Figure 5] Figure 5 is a plan view of the effective portion of the evaporation mask according to the first embodiment. [Figure 6] Figure 6 is a cross-sectional view obtained by cutting the region A-A' in Figure 5. [Figure 7] Figure 7 is a cross-sectional view of the B-B' region in Figure 5. [Figure 8] Figure 8 is a diagram for comparing Figures 6 and 7. [Figure 9] Figure 9 is a plan view of the effective portion of the evaporation mask according to the second embodiment. [Figure 10] Figure 10 is a cross-sectional view obtained by cutting the C-C' region in Figure 9. [Figure 11] Figure 11 is a cross-sectional view obtained by cutting the D-D' region in Figure 9. [Figure 12] Figure 12 is a diagram for comparing Figures 10 and 11. [Figure 13] Figure 13 is a plan view of the effective portion of the evaporation mask according to the third embodiment. [Figure 14] Figure 14 is a cross-sectional view of the E-E' region in Figure 13. [Figure 15] Figure 15 is a cross-sectional view of the F-F' region in Figure 13. [Figure 16] Figure 16 is a diagram for comparing Figures 14 and 15. [Figure 17] Figure 17 is a plan view of the effective portion of the evaporation mask according to the fourth embodiment. [Figure 18] Figure 18 is a cross-sectional view of the G-G' region in Figure 17. [Figure 19] Figure 19 is a cross-sectional view of the H-H' region in Figure 17. [Figure 20] Figure 20 is a cross-sectional view of the I-I' region in Figure 17. [Modes for carrying out the invention]

[0034] Preferred embodiments of the present invention will be described in detail below with reference to the attached drawings. It should be noted that the technical concept of the present invention is not limited to the embodiments described, but can be embodied in a variety of forms, and within the scope of the technical concept of the present invention, components between embodiments can be selectively combined or substituted. Furthermore, terms used in the embodiments of the present invention (including technical and scientific terms) shall be interpreted as generally understood by a person with ordinary skill in the art to which the present invention belongs, unless explicitly specified. Commonly used terms, such as those defined in dictionaries, may be interpreted considering their meaning in the context of the technology in question.

[0035] Furthermore, the terms used in the embodiments of the present invention are for illustrative purposes only and are not intended to limit the invention. In this specification, singular forms may also include plural forms unless otherwise specified, and when it is written as "at least one of A and B, C (or one or more)", it may include one or more of all possible combinations of A, B, and C.

[0036] Furthermore, in describing the components of the embodiments of the present invention, terms such as 1st, 2nd, A, B, (a), (b), etc., may be used. Such terms are used to distinguish a component from other components, and the terms do not limit the essence or order of the component.

[0037] When it is stated that one component is “linked,” “joined,” or “connected” to another component, this includes both cases where the component is directly linked or connected to the other component, and cases where other components are further “linked,” “joined,” or “connected” between each component.

[0038] Furthermore, when it is stated that a component is formed or positioned "above or below" each component, "above or below" includes not only cases where the two components are in direct contact, but also cases where one or more other components are formed or positioned between the two components.

[0039] Furthermore, when expressed as "up or down," it can include not only an upward direction but also a downward direction, based on a single component.

[0040] The following describes a vapor deposition mask according to an example, with reference to the drawings.

[0041] The deposition mask described below is a fine metal mask (FMM) capable of depositing red, green, and blue organic materials onto a deposition substrate to form an RGB pixel pattern on the substrate. The following description does not apply to open masks (OMs).

[0042] Figures 1 to 3 are diagrams illustrating the process of depositing an organic substance onto a deposition substrate 300 using a deposition mask 100 according to the embodiment.

[0043] Figure 1 is a diagram illustrating the connection of the deposition mask and frame according to the embodiment. Figure 2 is a cross-sectional view of the organic deposition apparatus including the deposition mask according to the embodiment. Figure 3 is a diagram illustrating that a deposition pattern is formed on the deposition substrate by through holes in the deposition mask.

[0044] Referring to Figures 1 and 2, the organic material deposition apparatus includes a deposition mask 100, a mask frame 200, a deposition substrate 300, an organic material deposition container 400, and a vacuum chamber 500.

[0045] The deposition mask 100 contains a metal. For example, the deposition mask contains iron (Fe) and nickel (Ni). More specifically, the deposition mask contains an Invar alloy containing iron (Fe) and nickel (Ni).

[0046] The deposition mask 100 includes a plurality of through-holes TH. The through-holes are arranged in the effective area. The through-holes are arranged to correspond to the pixel pattern formed on the deposition substrate. The deposition mask 100 includes non-effective areas other than the effective area which includes the deposition region.

[0047] The mask frame 200 includes an opening 205. The plurality of through holes are positioned on regions corresponding to the opening 205. This allows the organic material supplied from the organic material deposition container 400 to be deposited onto the deposition substrate 300. The deposition mask 100 is positioned and fixed on the mask frame 200. For example, the deposition mask 100 is subjected to a set tensile force. Alternatively, the deposition mask 100 may be welded and fixed to the mask frame 200.

[0048] For example, the ineffective portion of the vapor deposition mask 100 is welded. This fixes the vapor deposition mask 100 onto the mask frame 200. Subsequently, any portion of the mask frame 200 that protrudes outside is cut off and removed.

[0049] The mask frame 200 contains a highly rigid metal. This reduces deformation of the mask frame during the welding process.

[0050] The deposition substrate 300 is a substrate used when manufacturing a display device. For example, an OLED pixel pattern is formed on the deposition substrate 300. Red, green, and blue organic patterns are formed on the deposition substrate 300 to form pixels, which are the three primary colors of light. In other words, an RGB pattern is formed on the deposition substrate 300.

[0051] The organic material deposition container 400 is a crucible. An organic substance is placed inside the crucible. The organic material deposition container 400 moves within the vacuum chamber 500. That is, the organic material deposition container 400 moves in one direction within the vacuum chamber 500. For example, the organic material deposition container 400 moves in the width direction of the deposition mask 100 within the vacuum chamber 500.

[0052] A heat source and / or electric current are supplied to the organic material deposition container 400. As a result, the organic material is deposited onto the deposition substrate 300.

[0053] Referring to Figure 3, the deposition mask 100 includes a metal plate 10. The metal plate includes a first surface 1S and a second surface 2S. The first surface 1S and the second surface 2S are opposite to each other.

[0054] The first surface 1S includes small-area holes V1. The second surface 2S includes large-area holes V2. For example, the first surface 1S and the second surface 2S each have a plurality of small-area holes V1 and a plurality of large-area holes V2 formed on them.

[0055] Furthermore, the deposition mask 100 includes through-holes TH. The through-holes TH are formed by connecting portions CA to which the boundaries of the small-area holes V1 and the large-area holes V2 are connected.

[0056] The width of the large-area pore V2 is greater than the width of the small-area pore V1. The width of the small-area pore V1 is measured on the first surface 1S of the deposition mask 100. The width of the large-area pore V2 is measured on the second surface 2S of the deposition mask 100.

[0057] Furthermore, the width of the connecting portion CA has a set size. Specifically, the width of the connecting portion CA can be 15 μm to 33 μm. More specifically, the width of the connecting portion CA can be 19 μm to 33 μm. Even more specifically, the width of the connecting portion CA can be 20 μm to 27 μm. If the width of the connecting portion CA exceeds 33 μm, it becomes difficult to achieve a resolution of 500 PPI or higher. Also, if the width of the connecting portion CA is less than 15 μm, defects may occur during the deposition process.

[0058] The small area pore V1 faces the deposition substrate 300. The small area pore V1 is positioned close to the deposition substrate 300. As a result, the small area pore V1 has a shape that corresponds to the deposition pattern DP.

[0059] The large-area pore V2 faces the organic material deposition container 400. As a result, the organic material supplied from the organic material deposition container 400 is contained over a wide area by the large-area pore V2. Furthermore, a fine pattern can be quickly formed on the deposition substrate 300 through the small-area pore V1.

[0060] As a result, the organic material contained in the large-area pores V2 is deposited onto the deposition substrate 300 through the small-area pores V1. This forms one of the following pixel patterns on the deposition substrate 300: red, green, or blue. Subsequently, the above process is repeated. This forms all of the red, green, and blue pixel patterns on the deposition substrate 300.

[0061] Figure 4 is a plan view of the deposition mask 100 according to the embodiment.

[0062] Referring to Figure 4, the deposition mask 100 includes a deposition region DA and a non-deposition region NDA.

[0063] The deposition region DA is a region for forming a deposition pattern. The deposition region DA includes a pattern region and a non-pattern region. The pattern region is a region that includes small area holes V1, large area holes V2, through holes TH, and island portions IS. The non-pattern region is a region that does not include small area holes V1, large area holes V2, through holes TH, and island portions IS.

[0064] Furthermore, the deposition region DA includes a plurality of effective parts AA1, AA2, and AA3. Multiple deposition patterns can be formed by these effective parts. Specifically, the pattern region includes the plurality of effective parts AA1, AA2, and AA3.

[0065] The deposition region DA includes a plurality of separation regions IA1 and IA2. The separation regions IA1 and IA2 are positioned between adjacent effective regions. The separation regions IA1 and IA2 are separation regions between the plurality of effective regions. The separation regions IA1 and IA2 allow adjacent effective regions to be distinguished from each other. Furthermore, one deposition mask 100 can support multiple effective areas.

[0066] The non-deposition region NDA is a region that does not participate in vapor deposition. The non-deposition region NDA includes frame fixing regions FA1 and FA2. The frame fixing regions FA1 and FA2 are regions for fixing the vapor deposition mask 100 to the mask frame 200. The non-deposition region NDA may also include half-etched sections HF1 and HF2 and open sections.

[0067] The aforementioned half-etched sections HF1 and HF2 can distribute the stress generated when the deposition mask 100 is stretched.

[0068] Furthermore, the open portion can distribute the stress generated when the deposition mask 100 is stretched. This reduces deformation of the deposition mask.

[0069] As described above, the deposition mask 100 includes the through-holes. The through-holes are passages through which the organic material moves.

[0070] The through-hole is formed by a small-area hole, a large-area hole, and a connecting portion. When the large-area hole has an asymmetrical shape with multiple widths, the inclination angle of the inner surface of the large-area hole differs for each region. That is, the inner surface of the large-area hole in the long-width direction and the inner surface of the large-area hole in the short-width direction have different inclination angles. As a result, when the height of the small-area holes is the same, the deposition rate differs in the short-width direction and the long-width direction. This reduces the deposition efficiency of the deposition mask.

[0071] Furthermore, if the shape of the large-area holes is asymmetrical with multiple widths, the height of the large-area holes in the longitudinal direction will differ from the height of the large-area holes in the transverse direction. As a result, the strength of the deposition mask will differ in the longitudinal and transverse directions. This can cause the deposition mask to warp in one direction.

[0072] Furthermore, if the shape of the large-area pore is asymmetrical with multiple widths, the residual area of ​​the metal plate in the longitudinal direction will differ from the residual area of ​​the metal plate in the transverse direction. As a result, the strength of the deposition mask will differ in the longitudinal and transverse directions. This can cause the deposition mask to warp in one direction.

[0073] The following describes a vapor deposition mask that can solve the problems mentioned above.

[0074] The evaporation mask according to the first embodiment will be explained with reference to Figures 5 to 8.

[0075] Referring to Figures 5 to 8, the deposition mask 100 includes a plurality of through-holes. More specifically, the deposition mask 100 includes a plurality of unit through-holes UTH. The unit through-holes UTH are formed by a small-area hole V1, a large-area hole V2, and a connecting portion CA.

[0076] The unit through-hole UTH includes a first width W1 in the first direction 1D and a second width W2 in the second direction 2D. The first direction 1D and the second direction 2D may be the length direction or width direction of the deposition mask 100. For example, the first direction 1D may be the length direction of the deposition mask 100. The second direction 2D may be the width direction of the deposition mask 100. The size of the width is defined by the size of the width of the large-area hole.

[0077] The first width W1 and the second width W2 are different. For example, the first width W1 is greater than the second width W2. As a result, the unit through-hole UTH has a longer width in the first direction and a shorter width in the second direction.

[0078] Ribs RB and island portions IS are positioned between multiple unit through-holes UTH. The ribs RB are regions where the metal plate 10 is partially etched. The island portions IS are regions where the metal plate 10 is not etched. The thickness of the island portions IS is the same as the thickness of the non-deposited region NDA of the metal plate 10.

[0079] The rib RB is positioned between adjacent unit through-holes UTH in the first direction 1D. The island portion IS is positioned between adjacent unit through-holes UTH in the second direction 2D.

[0080] Therefore, the unit through-hole UTH has a height H1-1 for the first large-area hole and a height H1-2 for the second large-area hole. The height H1-1 for the first large-area hole is the height in the first direction 1D. The height H1-2 of the second large-area hole is the height in the second direction 2D. The height H1-1 of the first large-area hole and the height H1-2 of the second large-area hole are different. The height H1-1 of the first large-area hole is the height from the connecting portion CA to the rib RB. The height H1-2 of the second large-area hole is the height from the connecting portion CA to the island portion IS.

[0081] The rib RB is a region where the metal plate 10 is partially etched. Therefore, the height H1-2 of the second large-area hole is greater than the height H1-1 of the first large-area hole.

[0082] The large-area hole V2 has an inner surface. Figures 6 and 7 show that the inner surface of the large-area hole V2 is curved, but the embodiment is not limited to this. For example, the inner surface of the large-area hole V2 may be formed as a flat surface.

[0083] The large-area hole V2 includes a plurality of inner surfaces defined by direction. Referring to Figure 6, the large-area hole V2 includes a first inner surface ES1 facing the first direction. Referring to Figure 7, the large-area hole V2 also includes a second inner surface ES2 facing the second direction.

[0084] The first inner surface ES1 and the second inner surface ES2 each have an inclination angle. A virtual line is defined connecting one end of the connecting portion CA and one end of the large-area hole V2. The inclination angle is defined by the acute angle formed by the virtual line and the extension of the connecting portion CA.

[0085] The first inner surface ES1 has a first inclination angle θ1. The second inner surface ES2 has a second inclination angle θ2. The first inclination angle θ1 and the second inclination angle θ2 are different. For example, the second inclination angle θ2 may be greater than the first inclination angle θ1. That is, since the height H1-2 of the second large-area hole is greater than the height H1-1 of the first large-area hole, the second inclination angle θ2 may be greater than the first inclination angle θ1.

[0086] The height H1-2 of the second large-area hole is greater than the height H1-1 of the first large-area hole. Also, the second inclination angle θ2 is greater than the first inclination angle θ1.

[0087] As a result, the angle at which organic material enters the large-area pores in the first direction differs from that of organic material entering the large-area pores in the second direction. Furthermore, the amount of organic material entering the large-area pores in the first direction differs from that of organic material entering the large-area pores in the second direction. Consequently, if the heights of the small-area pores in the first and second directions are the same, the organic layer deposited on the deposition substrate will have different thicknesses in each direction. This reduces the deposition efficiency of the deposition mask.

[0088] Furthermore, since the heights of the large-area holes in the first and second directions are different, the residual area of ​​the metal plate in the first and second directions will be different. Consequently, the strength of the deposition mask will be different in the first and second directions. As a result, the strength of the deposition mask will differ depending on the direction, which may cause the deposition mask to warp in one direction.

[0089] In order to solve the above-mentioned problems, the deposition mask according to the first embodiment is formed so that the heights of the small area holes in the first direction and the second direction are different.

[0090] Referring to Figures 6 to 8, the unit through-hole UTH has a height H2-1 for the first small area hole and a height H2-2 for the second small area hole. The height H2-1 for the first small area hole is the height in the first direction 1D. The height H2-2 for the second small area hole is the height in the second direction 2D. The heights H2-1 and H2-2 for the first and second small area holes are different. The heights H2-1 and H2-2 for the first and second small area holes are defined by the height from the connecting portion CA to the first surface 1S of the metal plate.

[0091] More specifically, the height H2-2 of the second small area hole is smaller than the height H2-1 of the first small area hole.

[0092] More specifically, the heights H2-1 and H2-2 of the first and second small area holes can be 1 μm to 5 μm. More specifically, the heights H2-1 and H2-2 of the first and second small area holes can be 1 μm to 4 μm. More specifically, the heights H2-1 and H2-2 of the first and second small area holes can be 1 μm to 3 μm.

[0093] This reduces the distance between one side of the deposition mask 100 and the deposition substrate. Therefore, deposition defects due to shadow effects can be reduced. For example, when forming an RGB pattern using the deposition mask 100, it is possible to prevent other deposition materials from being deposited in the area between two adjacent patterns.

[0094] Within the range described above, the height H2-2 of the second small area hole is smaller than the height H2-1 of the first small area hole.

[0095] Therefore, the height H1-1 of the first large-area hole is smaller than the height H1-2 of the second large-area hole, and the height H2-1 of the first small-area hole is larger than the height H2-2 of the second small-area hole.

[0096] As a result, the strength of the deposition mask can be made uniform in the first and second directions. This prevents the deposition mask from warping in one direction. That is, the area of ​​the metal plate remaining on the upper and lower parts of the metal plate in the first and second directions becomes approximately the same. Therefore, the strength of the metal plate can be made uniform regardless of direction.

[0097] Furthermore, although the first inclination angle is smaller than the second inclination angle, the height of the first small area hole is greater than the height of the second small area hole.

[0098] This prevents the deposition of the deposition mask from being different in the first and second directions. Therefore, the deposition efficiency of the deposition mask is improved.

[0099] The deposition mask according to the first embodiment includes a unit through-hole. The unit through-hole has different widths in the first and second directions.

[0100] As a result, the large-area holes of the unit through-holes have different heights and inclination angles in the first and second directions. This reduces the deposition efficiency of the deposition mask. Furthermore, because the strength of the deposition mask differs depending on the direction, the deposition mask may warp in one direction.

[0101] Therefore, the deposition mask according to the first embodiment has different heights for small area holes depending on the direction. Specifically, the height of the small area holes is larger in the direction in which the height of the large area holes is smaller, and the height of the small area holes is smaller in the direction in which the height of the large area holes is larger. This prevents the strength of the deposition mask from varying depending on the direction.

[0102] Furthermore, the height of the small-area hole is greater in the direction where the inclination angle of the large-area hole is small. Furthermore, the height of the small-area holes is smaller in the direction where the inclination angle of the large-area holes is larger. This improves the uniformity of the vapor deposition of the vapor deposition mask.

[0103] Therefore, the evaporation mask according to the first embodiment has improved evaporation efficiency and reliability.

[0104] On the other hand, the above description mainly focused on the arrangement of ribs between adjacent unit through-holes in the longitudinal direction of the unit through-hole, and island sections between adjacent unit through-holes in the short direction of the unit through-hole, but the embodiments are not limited to this.

[0105] In other words, island sections may be arranged between adjacent unit through-holes in the longitudinal direction of the unit through-hole. Also, ribs may be arranged between adjacent unit through-holes in the short direction of the unit through-hole.

[0106] In this case, the height H2-1 of the first small area hole is smaller than the height H2-2 of the second small area hole. Furthermore, the above-described effect can be achieved by making the first inclination angle θ1 larger than the second inclination angle θ2.

[0107] The vapor deposition mask according to the second embodiment will be described below with reference to Figures 9 to 12. In the description of the vapor deposition mask according to the second embodiment, explanations that are the same as or similar to those of the vapor deposition mask according to the first embodiment described above will be omitted. In addition, the same reference numerals will be used for components that are the same as those of the vapor deposition mask according to the first embodiment described above.

[0108] Referring to Figures 9 to 12, the deposition mask 100 includes a plurality of through-holes. More specifically, the deposition mask 100 includes a plurality of unit through-holes UTH. The unit through-holes UTH are formed by a small-area hole V1, a large-area hole V2, and a connecting portion CA.

[0109] The unit through-hole UTH includes a first width W1 in the first direction 1D and a second width W2 in the second direction 2D. The first direction 1D and the second direction 2D may be the length direction or width direction of the deposition mask 100. For example, the first direction 1D may be the length direction of the deposition mask 100. The second direction 2D may be the width direction of the deposition mask 100. The size of the width is defined by the size of the width of the large-area hole.

[0110] The first width W1 and the second width W2 are different. For example, the first width W1 is greater than the second width W2. As a result, the unit through-hole UTH has a longer width in the first direction and a shorter width in the second direction.

[0111] Ribs RB and island portions IS are positioned between multiple unit through-holes UTH. The ribs RB are regions where the metal plate 10 is partially etched. The island portions IS are regions where the metal plate 10 is not etched.

[0112] A first rib RB1 is positioned between adjacent unit through-holes UTH in the first direction 1D. A second rib RB2 is positioned between adjacent unit through-holes UTH in the second direction 2D. Furthermore, an island section IS is positioned between the unit through-holes UTH adjacent to the third direction 3D. Here, the third direction 3D is the direction between the first direction 1D and the second direction 2D.

[0113] The first rib RB1 and the second rib RB2 connect the adjacent island section IS.

[0114] The first rib RB1 and the second rib RB2 extend in different directions. Specifically, the first rib RB1 extends in the second direction 2D, and the second rib RB2 extends in the first direction 1D.

[0115] The width W3 of the large-area holes V2 between the first ribs RB1 and the width W4 of the large-area holes V2 between the second ribs RB2 are different. More specifically, the width W3 of the large-area holes V2 between the first ribs RB1 is greater than the width W4 of the large-area holes V2 between the second ribs RB2.

[0116] As a result, the amount of organic material entering the large-area pores in the first direction and the amount of organic material entering the large-area pores in the second direction will be different. Consequently, if the heights of the small-area pores in the first and second directions are the same, the organic layer deposited on the deposition substrate will have different thicknesses in each direction. This reduces the deposition efficiency of the deposition mask.

[0117] Furthermore, since the width of the large-area holes between the first ribs in the second direction is different from the width of the large-area holes between the second ribs in the first direction, the residual area of ​​the metal plate in the first and second directions will be different. Therefore, the strength of the deposition mask will be different in the first and second directions. As a result, the strength of the deposition mask will be different depending on the direction, and the deposition mask may warp in one direction.

[0118] In order to solve the above-mentioned problems, the deposition mask according to the second embodiment has different heights for the large-area holes and small-area holes in the first and second directions.

[0119] Referring to Figures 10 to 12, the unit through-hole UTH has a height H1-1 for the first large-area hole and a height H1-2 for the second large-area hole. The height H1-1 for the first large-area hole is the height in the first direction. The height H1-2 for the second large-area hole is the height in the second direction. The height H1-1 for the first large-area hole is the height from the connecting portion CA to the first rib RB1. The height H1-2 for the second large-area hole is the height from the connecting portion CA to the second rib RB2.

[0120] The heights H1-1 of the first large-area hole and H1-2 of the second large-area hole are different. More specifically, the height H1-2 of the second large-area hole is greater than the height H1-1 of the first large-area hole.

[0121] As a result, the unit through-hole can accommodate a sufficient amount of organic material in the large-area pore in the second direction. That is, the width W4 of the large-area pore between the second ribs RB2 is greater than the width W3 of the large-area pore between the first ribs RB1. Therefore, the area for accommodating the organic material in the large-area pore in the second direction 2D is reduced by the width of the large-area pore between the second ribs RB2. Therefore, the height H1-2 of the second large-area pore is made greater than the height H1-1 of the first large-area pore. This ensures that the large-area pore in the second direction 2D has enough area to accommodate the organic material.

[0122] Referring to Figures 10 to 12, the unit through-hole UTH has a height H2-1 for the first small area hole and a height H2-2 for the second small area hole. The height H2-1 for the first small area hole is the height in the first direction 1D. The height H2-2 for the second small area hole is the height in the second direction 2D. The heights H2-1 for the first small area hole and H2-2 for the second small area hole are different. The heights H2-1 for the first small area hole and H2-2 for the second small area hole are the heights from the connecting portion CA to the first surface 1S of the metal plate, respectively.

[0123] More specifically, the height H2-2 of the second small area hole is smaller than the height H2-1 of the first small area hole.

[0124] More specifically, the heights H2-1 and H2-2 of the first and second small area holes can be 1 μm to 5 μm. More specifically, the heights H2-1 and H2-2 of the first and second small area holes can be 1 μm to 4 μm. More specifically, the heights H2-1 and H2-2 of the first and second small area holes can be 1 μm to 3 μm.

[0125] Within the range described above, the height H2-2 of the second small area hole is smaller than the height H2-1 of the first small area hole.

[0126] Therefore, the width W3 of the large-area hole between the first ribs RB1 in the first direction 1D is greater than the width W4 of the large-area hole between the second ribs RB2 in the second direction 2D. Also, the height H2-1 of the first small-area hole is greater than the height H2-2 of the second small-area hole.

[0127] As a result, the strength of the deposition mask can be made uniform in both the first and second directions. This prevents the deposition mask from warping in one direction. In other words, the area of ​​the metal plate remaining on the upper and lower parts of the metal plate in the first and second directions becomes approximately the same. Therefore, the strength of the metal plate can be made uniform regardless of direction.

[0128] The deposition mask according to the second embodiment includes unit through-holes. The unit through-holes have different widths in the first and second directions. In addition, ribs having different widths in the first and second directions are arranged between adjacent unit through-holes.

[0129] This reduces the uniformity of the deposition process on the deposition mask. Furthermore, the deposition mask develops varying strengths depending on the direction.

[0130] Therefore, the heights of the small-area holes and the large-area holes are made to differ depending on the direction. Specifically, the height of the large-area holes is smaller in the direction in which the width of the rib is smaller. The height of the small-area holes is larger in the direction in which the width of the rib is smaller. The height of the large-area holes is larger in the direction in which the width of the rib is larger. The height of the small-area holes is smaller in the direction in which the width of the rib is larger.

[0131] This prevents the strength of the deposition mask from varying depending on the direction. Furthermore, the large-area pores with wide ribs allow for the containment of a sufficient amount of organic material.

[0132] Therefore, the evaporation mask according to the second embodiment has improved evaporation efficiency and reliability.

[0133] The vapor deposition mask according to the third embodiment will be described below with reference to Figures 13 to 16. In the description of the vapor deposition mask according to the third embodiment, explanations that are the same as or similar to those of the vapor deposition mask according to the previously described embodiment will be omitted. In addition, the same reference numerals will be used for components that are the same as those of the vapor deposition mask according to the previously described embodiment.

[0134] Referring to Figures 13 to 16, the deposition mask 100 includes a plurality of through holes. More specifically, the deposition mask 100 includes a plurality of unit through-holes UTH. The unit through-holes UTH are formed by small-area holes V1, large-area holes V2, and connecting portions CA.

[0135] The unit through-hole UTH includes a first width W1 in a third direction 3D and a second width W2 in a fourth direction 4D. The third direction 3D is one diagonal direction of the deposition mask 100. The fourth direction 4D is the other diagonal direction of the deposition mask 100. The size of the width is defined by the size of the width of the large-area hole.

[0136] The first width W1 and the second width W2 are different. For example, the first width W1 is greater than the second width W2. As a result, the unit through-hole UTH has a longer width in the first direction and a shorter width in the second direction.

[0137] Ribs RB and island sections IS1 and IS2 are positioned between multiple unit through-holes UTH. The rib RB is a region where the metal plate 10 is partially etched. The island portions IS1 and IS2 are regions where the metal plate 10 is not etched.

[0138] A first island section IS1 is positioned between adjacent unit through-holes UTH in the third direction 3D. A second island section IS2 is positioned between adjacent unit through-holes UTH in the fourth direction 4D. Ribs RB are positioned between adjacent unit through-holes UTH in the first direction 1D and the second direction 2D.

[0139] The rib RB connects the adjacent island sections IS1 and IS2.

[0140] The width W5 of the first island section IS1 and the width W6 of the second island section IS2 are different. Specifically, the width W5 of the first island section IS1 is greater than the width W6 of the second island section IS2. Alternatively, the area of ​​the first island section IS1 and the area of ​​the second island section IS2 are different. Specifically, the area of ​​the first island section IS1 is greater than the area of ​​the second island section IS2.

[0141] As a result, the amount of organic material entering the large-area pores in the third direction and the amount of organic material entering the large-area pores in the fourth direction will be different. Consequently, if the heights of the small-area pores in the third and fourth directions are the same, the organic layer deposited on the deposition substrate will have different thicknesses in each direction. This reduces the deposition efficiency of the deposition mask.

[0142] Furthermore, since the width and / or area of ​​the first island portion and the second island portion are different, the residual area of ​​the metal plate in the third direction and the fourth direction will be different. Consequently, the strength of the deposition mask will be different in the third direction and the fourth direction. As a result, the strength of the deposition mask will be different depending on the direction, and the deposition mask may warp in one direction.

[0143] In order to solve the above-mentioned problems, the deposition mask according to the third embodiment has different heights for the large-area holes and small-area holes in the first and second directions.

[0144] Referring to Figures 14 to 16, the unit through-hole UTH has a height H1-1 for the first large-area hole and a height H1-2 for the second large-area hole. The height H1-1 for the first large-area hole is the height in the third direction. The height H1-2 for the second large-area hole is the height in the fourth direction. The height H1-1 for the first large-area hole is the height from the connecting portion CA to the first island portion IS1. The height H1-2 for the second large-area hole is the height from the connecting portion CA to the second island portion IS2.

[0145] The heights H1-1 of the first large-area hole and H1-2 of the second large-area hole are different. More specifically, the height H1-1 of the first large-area hole is greater than the height H1-2 of the second large-area hole.

[0146] As a result, the unit through-hole can accommodate a sufficient amount of organic material in the large-area hole in the third direction 3D. That is, the width W5 and / or area of ​​the first island portion IS1 is greater than the width W6 and / or area of ​​the second island portion IS2. Therefore, the area of ​​the large-area hole in the third direction 3D that accommodates the organic material is reduced by the width W5 and / or area of ​​the first island portion IS1. Therefore, the height H1-1 of the first large-area hole is made greater than the height H1-2 of the second large-area hole. As a result, the large-area hole in the third direction 3D can secure an area in which the organic material is accommodated.

[0147] Referring to Figures 14 to 16, the unit through-hole UTH has a height H2-1 for the first small area hole and a height H2-2 for the second small area hole. The height H2-1 for the first small area hole is the height in the third direction 3D. The height H2-2 for the second small area hole is the height in the fourth direction 4D. The heights H2-1 for the first small area hole and H2-2 for the second small area hole are different. The heights H2-1 for the first small area hole and H2-2 for the second small area hole are the heights from the connecting portion CA to the first surface 1S of the metal plate, respectively.

[0148] More specifically, the height H2-1 of the first small area hole is smaller than the height H2-2 of the second small area hole.

[0149] More specifically, the heights H2-1 and H2-2 of the first and second small area holes can be 1 μm to 5 μm. More specifically, the heights H2-1 and H2-2 of the first and second small area holes can be 1 μm to 4 μm. More specifically, the heights H2-1 and H2-2 of the first and second small area holes can be 1 μm to 3 μm.

[0150] Within the range described above, the height H2-1 of the first small area hole is smaller than the height H2-2 of the second small area hole.

[0151] Therefore, the width W6 of the second island portion IS2 in the fourth direction 4D is smaller than the width W5 of the first island portion IS1 in the third direction 3D. Also, the height H2-2 of the second small area hole is greater than the height H2-1 of the first small area hole.

[0152] As a result, the strength of the deposition mask can be made uniform in the third direction 3D and the fourth direction 4D. This prevents the deposition mask 100 from warping in one direction. That is, the areas of the metal plate remaining on the upper and lower parts of the metal plate in the third and fourth directions become approximately the same. Therefore, the strength of the metal plate can be made uniform regardless of direction.

[0153] The deposition mask according to the third embodiment includes unit through-holes. The unit through-holes have different widths in the third and fourth directions. Island portions having different widths and / or areas in the third and fourth directions are arranged between adjacent unit through-holes.

[0154] This reduces the uniformity of the deposition process on the deposition mask. Furthermore, the deposition mask develops varying strengths depending on the direction.

[0155] Therefore, in the deposition mask according to the third embodiment, the heights of the small area holes and the large area holes differ depending on the direction. Specifically, the height of the large area holes is small in the direction in which the width and / or area of ​​the island portion is small. The height of the small area holes is large in the direction in which the width and / or area of ​​the island portion is small. The height of the large area holes is large in the direction in which the width and / or area of ​​the island portion is large. The height of the small area holes is small in the direction in which the width and / or area of ​​the island portion is large.

[0156] This prevents the strength of the deposition mask from varying depending on the direction. Furthermore, the large-area pores, with their large width and / or area, allow for the containment of a sufficient amount of organic material.

[0157] Therefore, the evaporation mask according to the third embodiment has improved evaporation efficiency and reliability.

[0158] On the other hand, the above description mainly focused on the fact that the width and / or area of ​​the first island portion between adjacent unit through-holes in the longitudinal direction of the unit through-hole is greater than the width and / or area of ​​the second island portion between adjacent unit through-holes in the short direction of the unit through-hole; however, the embodiments are not limited to this.

[0159] In other words, the width and / or area of ​​the first island portion between adjacent unit through-holes in the longitudinal direction of the unit through-hole may be smaller than the width and / or area of ​​the second island portion between adjacent unit through-holes in the short direction of the unit through-hole.

[0160] In this case, the height H1-2 of the second large-area hole is greater than the height H1-1 of the first large-area hole. Furthermore, the above-mentioned effect can be achieved by making the height H2-2 of the two small-area holes smaller than the height H2-1 of the one small-area hole.

[0161] The vapor deposition mask according to the fourth embodiment will be described below with reference to Figures 17 to 20. In the description of the vapor deposition mask according to the fourth embodiment, explanations that are the same as or similar to those of the vapor deposition mask according to the previously described embodiment will be omitted. In addition, the same reference numerals will be used for components that are the same as those of the vapor deposition mask according to the previously described embodiment.

[0162] Referring to Figures 17 to 20, the deposition mask 100 according to the fourth embodiment includes a plurality of through-holes. More specifically, the deposition mask 100 includes a plurality of unit through-holes UTH. The unit through-hole UTH is formed by a small-area hole V1, a large-area hole V2, and a connecting portion CA.

[0163] The unit through-hole UTH includes a first width W1 in the first direction 1D and a second width W2 in the second direction 2D. The first direction 1D may be the longitudinal direction of the deposition mask 100. The second direction 2D may be the width direction of the deposition mask 100. The size of the width is defined by the size of the width of the large-area hole.

[0164] The first width W1 and the second width W2 are different. For example, the first width W1 is greater than the second width W2. As a result, the unit through-hole UTH has a longer width in the first direction and a shorter width in the second direction.

[0165] Ribs RB and island portions IS are positioned between multiple unit through-holes UTH. The ribs RB are regions where the metal plate 10 is partially etched. The island portions IS are regions where the metal plate 10 is not etched.

[0166] Ribs RB are arranged between adjacent unit through-holes UTH in the first direction 1D. Ribs RB and island sections IS are arranged between adjacent unit through-holes UTH in the second direction 2D. More specifically, both the rib RB and the island IS are arranged in one of the regions between the unit through-holes UTH adjacent to the second direction 2D. In the other region between the unit through-holes UTH adjacent to the second direction 2D, only the rib RB is arranged.

[0167] Furthermore, one rib RB is placed between adjacent unit through-holes UTH in the first direction 1D. In addition, at least one rib RB is placed in the other regions between adjacent unit through-holes UTH in the second direction 2D. More specifically, multiple ribs RB are placed in the other regions between adjacent unit through-holes UTH in the second direction 2D.

[0168] Therefore, the residual area of ​​the metal plate in the first direction and the second direction will be different. That is, only one rib is placed between adjacent unit through holes UTH in the first direction 1D. On the other hand, multiple island portions and multiple ribs are placed between adjacent unit through holes UTH in the second direction 2D.

[0169] Therefore, the residual area of ​​the metal plate in the first direction and the second direction will be different. As a result, the strength of the deposition mask will be different in the first direction and the second direction. Because the strength of the deposition mask will be different depending on the direction, the deposition mask may warp in one direction.

[0170] In order to solve the above-mentioned problems, the deposition mask according to the fourth embodiment is formed so that the heights of the small area holes in the first direction and the second direction are different.

[0171] Referring to Figures 18 to 20, the unit through-hole UTH has a height H2-1 for the first small area hole and a height H2-2 for the second small area hole. The height H2-1 for the first small area hole is the height in the first direction 1D. The height H2-2 for the second small area hole is the height in the second direction 2D. The heights H2-1 and H2-2 of the first small area hole are different. The heights H2-1 and H2-2 of the first small area hole are the heights from the connecting portion CA to the first surface 1S of the metal plate, respectively.

[0172] More specifically, the height H2-2 of the second small area hole is smaller than the height H2-1 of the first small area hole.

[0173] More specifically, the heights H2-1 and H2-2 of the first and second small area holes can be 1 μm to 5 μm. More specifically, the heights H2-1 and H2-2 of the first and second small area holes can be 1 μm to 4 μm. More specifically, the heights H2-1 and H2-2 of the first and second small area holes can be 1 μm to 3 μm.

[0174] Within the range described above, the height H2-2 of the second small area hole is smaller than the height H2-1 of the first small area hole.

[0175] As a result, the strength of the deposition mask can be made uniform in the first and second directions. This prevents the deposition mask from warping in one direction. In other words, the difference in the area of ​​the metal plate remaining on the upper and lower parts of the metal plate in the first and second directions is reduced. Therefore, the strength of the metal plate can be made uniform regardless of direction.

[0176] On the other hand, the above description mainly focused on the arrangement of one rib between adjacent unit through-holes in the longitudinal direction of the unit through-hole, and multiple island portions and multiple ribs between adjacent unit through-holes in the short direction of the unit through-hole, but the embodiments are not limited to this.

[0177] In other words, one rib may be placed between adjacent unit through-holes in the short-width direction of the unit through-hole. Alternatively, multiple island sections and multiple ribs may be placed between adjacent unit through-holes in the long-width direction of the unit through-hole.

[0178] In this case, the height H2-2 of the second small area hole can be made larger than the height H2-1 of the first small area hole to achieve the above-mentioned effect.

[0179] Furthermore, while the above description mainly focused on the arrangement of one rib between adjacent unit through-holes in the longitudinal direction of the unit through-hole, and multiple island portions and multiple ribs between adjacent unit through-holes in the short direction of the unit through-hole, the embodiments are not limited to this.

[0180] In other words, one rib and one island portion may be arranged between adjacent unit through-holes in the short-width direction of the unit through-hole. Alternatively, multiple island portions and multiple ribs may be arranged between adjacent unit through-holes in the long-width direction of the unit through-hole.

[0181] In this case, the above-mentioned effect can be achieved by making the height H2-1 of the first small area hole larger than the height H2-2 of the second small area hole.

[0182] The features, structures, and effects described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to one embodiment. Furthermore, the features, structures, and effects exemplified in each embodiment can be combined or modified for implementation in other embodiments by a person with ordinary skill in the art to which the embodiment belongs. Therefore, such combinations and modifications should be interpreted as being included within the scope of the present invention.

[0183] Furthermore, although the above description has focused on embodiments, these are merely examples and do not limit the present invention. Anyone with ordinary skill in the art to which the present invention belongs can make various modifications and applications not exemplified above, without departing from the essential characteristics of these embodiments. For example, each component specifically presented in the embodiments can be modified and implemented. Such differences resulting from modifications and applications should be interpreted as being within the scope of the present invention as defined in the appended claims.

Claims

1. A metal plate including a vapor-deposited region and a non-vapor-deposited region, The deposition region includes at least one effective portion, The effective portion includes a plurality of unit through holes, The unit through-hole includes a small-area hole formed on the first surface of the metal plate, a large-area hole formed on the second surface of the metal plate, and a connecting portion that connects the small-area hole and the large-area hole. The aforementioned unit through-hole includes a first width defined by the width in the first direction and a second width defined by the width in the second direction. The first width and the second width are different. Ribs are arranged between adjacent unit through-holes in the first direction. Island sections are arranged between adjacent unit through-holes in the second direction. A vapor deposition mask wherein the height of the small area pore of the unit through-hole in the second direction is smaller than the height of the small area pore of the unit through-hole in the first direction.

2. The vapor deposition mask according to claim 1, wherein the first inclination angle of the first inner surface of the large-area hole in the first direction is smaller than the second inclination angle of the second inner surface of the large-area hole in the second direction.

3. The first direction is defined in the longitudinal direction of the deposition mask, The second direction is defined in the width direction of the deposition mask, The vapor deposition mask according to claim 1 or 2, wherein the first width is greater than the second width.

4. The first direction is defined in the longitudinal direction of the deposition mask, The second direction is defined in the width direction of the deposition mask, The vapor deposition mask according to claim 1 or 2, wherein the second width is greater than the first width.

5. A metal plate including a vapor-deposited region and a non-vapor-deposited region, The deposition region includes at least one effective portion, The effective portion includes a plurality of unit through holes, The unit through-hole includes a small-area hole formed on the first surface of the metal plate, a large-area hole formed on the second surface of the metal plate, and a connecting portion that connects the small-area hole and the large-area hole. The aforementioned unit through-hole includes a first width defined by the width in the first direction and a second width defined by the width in the second direction. The first width and the second width are different. A first rib is positioned between adjacent unit through-holes in the first direction. A second rib is positioned between adjacent unit through-holes in the second direction. The width of the large-area hole between the first ribs is greater than the width of the large-area hole between the second ribs. A vapor deposition mask wherein the height of the small area pore of the unit through-hole in the second direction is smaller than the height of the small area pore of the unit through-hole in the first direction.

6. The vapor deposition mask according to claim 5, wherein the first rib and the second rib extend in different directions from each other.

7. A metal plate including a vapor-deposited region and a non-vapor-deposited region, The deposition region includes at least one effective portion, The effective portion includes a plurality of unit through holes, The unit through-hole includes a small-area hole formed on the first surface of the metal plate, a large-area hole formed on the second surface of the metal plate, and a connecting portion that connects the small-area hole and the large-area hole. The aforementioned unit through-hole includes a first width defined by the width in the third direction and a second width defined by the width in the fourth direction. The first width and the second width are different. A first island section is arranged between adjacent unit through-holes in the third direction. A second island section is positioned between adjacent unit through-holes in the fourth direction. The width of the first island section is greater than the width of the second island section. A vapor deposition mask wherein the height of the small area pores in the third direction is smaller than the height of the small area pores in the fourth direction.

8. The vapor deposition mask according to claim 7, wherein the area of ​​the first island portion is larger than the area of ​​the second island portion.

9. A metal plate including a vapor-deposited region and a non-vapor-deposited region, The deposition region includes at least one effective portion, The effective portion includes a plurality of unit through holes, The unit through-hole includes a small-area hole formed on the first surface of the metal plate, a large-area hole formed on the second surface of the metal plate, and a connecting portion that connects the small-area hole and the large-area hole. The aforementioned unit through-hole includes a first width defined by the width in the first direction and a second width defined by the width in the second direction. The first width and the second width are different. Ribs are arranged between adjacent unit through-holes in the first direction. Ribs and island sections are arranged between adjacent unit through-holes in the second direction. A vapor deposition mask wherein the height of the small area pore of the unit through-hole in the second direction is smaller than the height of the small area pore of the unit through-hole in the first direction.

10. In one of the regions between adjacent unit through-holes in the second direction, ribs and island portions are arranged. The deposition mask according to claim 9, wherein at least one rib is provided in the other region of the region between adjacent unit through-holes in the second direction.

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