Power module

Abstract

This invention provides a power module that can reduce inductance. [Solution] The power module 1 includes a first semiconductor element 100, a second semiconductor element 200, a first insulating substrate 411 to which the first semiconductor element is bonded, a second insulating substrate 421 to which the second semiconductor element is bonded, a first conductive member 416 penetrating the first insulating substrate, a second conductive member 611 electrically connected to the second electrode 112, a third conductive member 616 electrically connected to the first conductive member, a fourth conductive member 426 penetrating the second insulating substrate, a fifth conductive member 621 electrically connected to the fourth electrode, a sixth conductive member 626 bonded to the seventh surface 423 and electrically connected to the fourth conductive member, and a seventh conductive member 60 electrically connecting the third conductive member and the fifth conductive member. The first conductive member is located between the first semiconductor element and the fourth conductive member, the fourth conductive member is located between the second semiconductor element and the first conductive member, and the second conductive member and the sixth conductive member overlap in a plan view.

Description

Technical Field

[0006] ,

[0001] The present disclosure relates to a power module.

Background Art

[0002] A power module in which two semiconductor elements overlap in a plan view has been proposed.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Summary of the Invention

Problems to be Solved by the Invention

[0004] In recent years, the demand for further reduction of inductance has been increasing.

[0005] An object of the present disclosure is to provide a power module capable of reducing inductance.

Means for Solving the Problems

[0006] According to one embodiment of the present disclosure, a first semiconductor element having a first surface and a second surface opposite to the first surface, with a first electrode provided on the first surface and a second electrode provided on the second surface; a second semiconductor element having a third surface and a fourth surface opposite to the third surface, with a third electrode provided on the third surface and a fourth electrode provided on the fourth surface; a first insulating substrate having a fifth surface to which the first semiconductor element is bonded and a sixth surface opposite to the fifth surface; a second insulating substrate having a seventh surface to which the second semiconductor element is bonded and an eighth surface opposite to the seventh surface; a first conductive member penetrating the first insulating substrate, electrically connected to the first electrode, and laminated on the sixth surface of the first insulating substrate; and a second conductive member electrically connected to the second electrode. A power module is provided comprising a conductive member, a third conductive member bonded to the fifth surface and electrically connected to the first conductive member, a fourth conductive member penetrating the second insulating substrate and electrically connected to the third electrode and laminated on the eighth surface of the second insulating substrate, a fifth conductive member electrically connected to the fourth electrode, a sixth conductive member bonded to the seventh surface and electrically connected to the fourth conductive member, and a seventh conductive member electrically connecting the third conductive member and the fifth conductive member, wherein the first conductive member is located between the first semiconductor element and the fourth conductive member, the fourth conductive member is located between the second semiconductor element and the first conductive member, and the second conductive member and the sixth conductive member overlap in a plan view. [Effects of the Invention]

[0007] According to the disclosed technology, inductance can be reduced. [Brief explanation of the drawing]

[0008] [Figure 1] This is a perspective view (part 1) showing a power module according to an embodiment. [Figure 2] This is a perspective view (part 2) showing a power module according to the embodiment. [Figure 3] This is a perspective view (part 1) showing a part of the power module according to the embodiment. [Figure 4]This is a perspective view (part 2) showing a part of the power module according to the embodiment. [Figure 5] This is a perspective view (part 3) showing a part of the power module according to the embodiment. [Figure 6] This is a perspective view (part 4) showing a part of the power module according to the embodiment. [Figure 7] This is a perspective view (part 5) showing a part of the power module according to the embodiment. [Figure 8] This is a perspective view (part 6) showing a part of the power module according to the embodiment. [Figure 9] This is a perspective view (part 7) showing a part of the power module according to the embodiment. [Figure 10] This is a schematic cross-sectional view showing a power module according to an embodiment. [Figure 11] This is a schematic top view showing a part of the power module according to the embodiment. [Figure 12] This is a schematic bottom view showing a part of the power module according to the embodiment. [Figure 13] This is a circuit diagram showing a power module according to an embodiment. [Modes for carrying out the invention]

[0009] The embodiments will be described in detail below with reference to the attached drawings. In this specification and drawings, components having substantially the same functional configuration will be denoted by the same reference numerals to avoid redundant explanations. In this disclosure, the X-axis (X1-X2 direction), Y-axis (Y1-Y2 direction), and Z-axis (Z1-Z2 direction) are mutually orthogonal directions. The plane containing the X and Y axes is described as the XY plane, the plane containing the Y and Z axes is described as the YZ plane, and the plane containing the Z and X axes is described as the ZX plane. For convenience, the Z1-Z2 direction is considered the up and down direction, with the Z1 side being the upper side and the Z2 side being the lower side. Plane view means viewing the object from the Z1 side, and planar shape means the shape of the object as viewed from the Z1 side. However, the power module can be used upside down or arranged at any angle.

[0010] Embodiments of this disclosure will now be described. The embodiments relate to a power module. Figures 1 and 2 are perspective views showing a power module according to the embodiment. Figures 3 to 9 are perspective views showing a part of the power module according to the embodiment. Figure 10 is a schematic cross-sectional view showing a power module according to the embodiment. Figure 11 is a schematic top view showing a part of the power module according to the embodiment. Figure 12 is a schematic bottom view showing a part of the power module according to the embodiment.

[0011] As shown in Figures 1 to 12, the power module 1 according to the embodiment includes a semiconductor package 10, a semiconductor package 20, an insulating film 50, and conductive pins 60.

[0012] The insulating film 50 is provided between the semiconductor package 10 and the semiconductor package 20. The insulating film 50 has one surface 51 facing the semiconductor package 10 and the other surface 52 facing the semiconductor package 20 on the side opposite to the one surface 51. For example, the semiconductor package 10 contacts one surface 51 of the insulating film 50, and the semiconductor package 20 contacts the other surface 52 of the insulating film 50. The semiconductor package 10 is on the Z2 side of the insulating film 50, and the semiconductor package 20 is on the Z1 side of the insulating film 50. The material of the insulating film 50 is, for example, polyimide.

[0013] As shown in FIGS. 4 to 6, FIG. 10, and FIG. 11, the semiconductor package 10 includes two semiconductor elements 100, a flexible wiring board 410, two shims 510, lead terminals 611, lead terminals 612, a control terminal 171, a sense source terminal 172, and a mold 710.

[0014] As shown in FIGS. 7 to 9, FIG. 10, and FIG. 12, the semiconductor package 20 includes two semiconductor elements 200, a flexible wiring board 420, two shims 520, lead terminals 621, lead terminals 622, a control terminal 271, a sense source terminal 272, and a mold 720.

[0015] The semiconductor elements 100 and 200 are formed using, for example, silicon (Si) or silicon carbide (SiC). The semiconductor elements 100 and 200 may be formed using gallium nitride (GaN) or gallium arsenide (GaAs). For example, the semiconductor elements 100 and 200 are insulated gate bipolar transistors (IGBTs) or metal-oxide-semiconductor field-effect transistors (MOSFETs). The planar shape of the semiconductor elements 100 and 200 is, for example, rectangular. The thickness of the semiconductor elements 100 and 200 is, for example, about 50 μm to 500 μm.

[0016] As shown in Figure 10, the semiconductor element 100 has one surface 101 and another surface 102 opposite to the surface 101. The semiconductor element 100 also has a main body 110, electrodes 111, 112, and 113. Electrodes 111 and 113 are provided on one surface 101, and electrode 112 is provided on the other surface 102. For example, electrodes 111, 112, and 113 are the source electrode, drain electrode, and gate electrode, respectively. The semiconductor element 100 is an example of a first semiconductor element, one surface 101 is an example of a first surface, and the other surface 102 is an example of a second surface. Electrode 111 is an example of a first electrode, electrode 112 is an example of a second electrode, and electrode 113 is an example of a fifth electrode.

[0017] As shown in Figure 10, the semiconductor element 200 has one surface 201 and the other surface 202 opposite to the surface 201. The semiconductor element 200 also has a main body 210, electrodes 211, 212, and 213. Electrodes 211 and 213 are provided on one surface 201, and electrode 212 is provided on the other surface 202. For example, electrodes 211, 212, and 213 are the source electrode, drain electrode, and gate electrode, respectively. The semiconductor element 200 is an example of a second semiconductor element, one surface 201 is an example of a third surface, and the other surface 202 is an example of a fourth surface. Electrode 211 is an example of a third electrode, electrode 212 is an example of a fourth electrode, and electrode 213 is an example of a sixth electrode.

[0018] Electrodes 111, 112, 113, 211, 212, and 213 (hereinafter collectively referred to as "electrodes") can be made from materials such as aluminum (Al) or copper (Cu), or alloys containing at least one metal selected from these metals. If necessary, a surface treatment layer may be formed on the surface of the electrodes. Examples of surface treatment layers include a gold (Au) layer, a nickel (Ni) layer / Au layer (a metal layer formed by stacking Ni and Au layers in that order), and a Ni / palladium (Pd) layer / Au layer (a metal layer formed by stacking Ni, Pd, and Au layers in that order). For these Au, Ni, and Pd layers, for example, metal layers formed by electroless plating (electroless plated metal layers) can be used. Furthermore, the Au layer is a metal layer made of Au or an Au alloy, the Ni layer is a metal layer made of Ni or a Ni alloy, and the Pd layer is a metal layer made of Pd or a Pd alloy.

[0019] Shims 510 and 520 are metal plates, such as copper plates. The thickness of shims 510 and 520 is approximately the same as the thickness of semiconductor elements 100 and 200.

[0020] The flexible wiring board 410 comprises an insulating substrate 411, an insulating adhesive layer 412, and a wiring layer 415. The insulating substrate 411 has one surface 413 and another surface 414 opposite to the first surface 413. The adhesive layer 412 is provided on the first surface 413, and the wiring layer 415 is provided on the other surface 414. The adhesive layer 412 may be provided over the entire surface 413. The wiring layer 415 is laminated on the other surface 414. The insulating substrate 411 is an example of a first insulating substrate. The first surface 413 is an example of a fifth surface, and the other surface 414 is an example of a sixth surface.

[0021] The insulating substrate 411 is, for example, a resin film. As the material for the resin film, insulating resins such as polyimide resins, polyethylene resins, and epoxy resins can be used. The insulating substrate 411 is, for example, flexible. Here, flexibility refers to the property of being able to be bent or flexed. The planar shape of the insulating substrate 411 is, for example, rectangular. The thickness of the insulating substrate 411 is, for example, about 50 μm to 100 μm.

[0022] The semiconductor element 100 and the shim 510 are bonded to one surface 413 of the insulating substrate 411 by an adhesive layer 412. One surface 101 of the semiconductor element 100 faces the one surface 413 of the insulating substrate 411. Through holes 418 reaching the electrode 111, through holes 419 reaching the shim 510, and through holes (not shown) reaching the electrode 113 are formed in the insulating substrate 411 and the adhesive layer 412. Multiple through holes 418 or multiple through holes 419 may be formed. The shim 510 is on the X2 side of the semiconductor element 100.

[0023] For example, epoxy, polyimide, or silicone adhesives can be used as the material for the adhesive layer 412. The thickness of the adhesive layer 412 is, for example, about 20 μm to 40 μm.

[0024] As shown in Figures 5 and 10, the wiring layer 415 has a wiring 416 connected to the electrode 111 through a through hole 418, a wiring 417 connected to the electrode 113 through a through hole (not shown), and a wiring 416A connected to the wiring 416. The wiring 416 is also connected to the shim 510 through a through hole 419. Wiring 416 is an example of a first conductive member, and wiring 417 is an example of an eighth conductive member.

[0025] The wiring 416 includes via wiring filled in through-hole 418, via wiring filled in through-hole 419, and a wiring pattern formed on the other surface 414 of the insulating substrate 411. The wiring 417 includes via wiring filled in through-hole (not shown) and a wiring pattern formed on the other surface 414 of the insulating substrate 411. The wiring 416A includes a wiring pattern formed on the other surface 414 of the insulating substrate 411.

[0026] A lead terminal 611 is bonded to the electrode 112 of the semiconductor element 100 by a conductive adhesive layer 613. A lead terminal 612 is bonded to the shim 510 by a conductive adhesive layer 614. In a plan view, the lead terminal 611 extends from the semiconductor element 100 toward X1, and the lead terminal 612 extends from the shim 510 toward X2. The lead terminals 611 and 612 are formed from, for example, lead frames made of Cu. The conductive adhesive layers 613 and 614 are, for example, solder layers or sintered metal layers. The conductive adhesive layers 613 and 614 may also be composed of conductive paste. The lead terminal 611 is an example of a second conductive member. The laminate 616 of the shim 510, conductive adhesive layer 614, and lead terminal 612 is an example of a third conductive member.

[0027] As shown in Figure 5, the control terminal 171 is joined to the wiring 417 by a conductive adhesive layer (not shown), and the sense source terminal 172 is joined to the wiring 416A by a conductive adhesive layer (not shown). The control terminal 171 is electrically connected to the wiring 417, and the sense source terminal 172 is electrically connected to the wiring 416A. The control terminal 171 extends from the wiring 417 towards Z1, and the sense source terminal 172 extends from the wiring 416A towards Z1. The control terminal 171 is an example of a first control terminal.

[0028] As shown in Figure 10, the mold 710 seals the semiconductor element 100, the flexible wiring board 410, the shim 510, the lead terminal 611, and the lead terminal 612. The mold 710 has one surface 717 and the other surface 718 opposite to the surface 717. The X1 side end of the lead terminal 611 extends from the mold 710, and the X2 side end of the lead terminal 612 extends from the mold 710. One surface 717 of the mold 710 faces the insulating film 50. An opening 711 (for heat dissipation) is formed on the other surface 718 of the mold 710, reaching the lower surface (Z2 side surface) of the lead terminal 611. The mold 710 is an example of a first sealing member.

[0029] The flexible wiring board 420 comprises an insulating substrate 421, an insulating adhesive layer 422, and a wiring layer 425. The insulating substrate 421 has one surface 423 and another surface 424 opposite to the first surface 423. The adhesive layer 422 is provided on the first surface 423, and the wiring layer 425 is provided on the other surface 424. The adhesive layer 422 may be provided over the entire surface 423. The wiring layer 425 is laminated on the other surface 424. The insulating substrate 421 is an example of a second insulating substrate. The first surface 423 is an example of a seventh surface, and the other surface 424 is an example of an eighth surface.

[0030] The semiconductor element 200 and the shim 520 are bonded to one surface 423 of the insulating substrate 421 by an adhesive layer 422. One surface 201 of the semiconductor element 200 faces the one surface 423 of the insulating substrate 421. Through holes 428 reaching the electrode 211, through holes 429 reaching the shim 520, and through holes (not shown) reaching the electrode 213 are formed in the insulating substrate 421 and the adhesive layer 422. Multiple through holes 428 or multiple through holes 429 may be formed. The shim 520 is on the X1 side of the semiconductor element 200.

[0031] The material and thickness of the insulating substrate 421 are, for example, the same as the material and thickness of the insulating substrate 411. The material and thickness of the adhesive layer 422 are, for example, the same as the material and thickness of the adhesive layer 412.

[0032] As shown in Figures 8 and 10, the wiring layer 425 has a wiring 426 connected to the electrode 211 through a through hole 428, a wiring 427 connected to the electrode 213 through a through hole (not shown), and a wiring 426A connected to the wiring 426. The wiring 426 is also connected to the shim 520 through a through hole 429. Wiring 426 is an example of a fourth conductive member, and wiring 427 is an example of a ninth conductive member.

[0033] The wiring 426 includes via wiring filled in through-hole 428, via wiring filled in through-hole 429, and a wiring pattern formed on the other surface 424 of the insulating substrate 421. The wiring 427 includes via wiring filled in through-hole (not shown) and a wiring pattern formed on the other surface 424 of the insulating substrate 421. The wiring 426A includes a wiring pattern formed on the other surface 424 of the insulating substrate 421.

[0034] A lead terminal 621 is bonded to the electrode 212 of the semiconductor element 200 by a conductive adhesive layer 623. A lead terminal 622 is bonded to the shim 520 by a conductive adhesive layer 624. In a plan view, the lead terminal 621 extends from the semiconductor element 100 toward X2, and the lead terminal 622 extends from the shim 520 toward X1. The lead terminals 621 and 622 are formed from, for example, lead frames made of Cu. The conductive adhesive layers 623 and 624 are, for example, solder layers or sintered metal layers. The conductive adhesive layers 623 and 624 may also be composed of conductive paste. The lead terminal 621 is an example of a fifth conductive member. The laminate 626 of the shim 520, conductive adhesive layer 624, and lead terminal 622 is an example of a sixth conductive member.

[0035] As shown in Figure 8, the control terminal 271 is joined to the wiring 427 by a conductive adhesive layer (not shown), and the sense source terminal 272 is joined to the wiring 426A by a conductive adhesive layer (not shown). The control terminal 271 is electrically connected to the wiring 427, and the sense source terminal 272 is electrically connected to the wiring 426A. The control terminal 271 extends from the wiring 427 towards Z2, and the sense source terminal 272 extends from the wiring 426A towards Z2. The control terminal 271 is an example of a second control terminal.

[0036] As shown in Figure 10, the mold 720 seals the semiconductor element 200, the flexible wiring board 420, the shim 520, the lead terminals 621 and 622. The mold 720 has one surface 727 and the other surface 728 opposite to the surface 727. The X2 side end of the lead terminal 621 extends from the mold 720, and the X1 side end of the lead terminal 622 extends from the mold 720. One surface 727 of the mold 720 faces the insulating film 50. An opening 721 (for heat dissipation) is formed on the other surface 728 of the mold 720, reaching the upper surface (Z1 side surface) of the lead terminal 621. The mold 720 is an example of a second sealing member.

[0037] In a plan view, the laminate 616 and the lead terminal 621 overlap, and the lead terminal 611 and the laminate 626 overlap.

[0038] As shown in Figure 10, the laminate 616 has a surface 511 facing the lead terminals 621 and in contact with the adhesive layer 412. Holes 512 are formed in the surface 511. Multiple holes 512 may be formed, for example, two. For example, the holes 512 penetrate the shim 510 and the conductive adhesive layer 614 and reach partway along the thickness direction of the lead terminals 612. As shown in Figure 6, the holes 512 extend, for example, along the Y axis and have a longitudinal direction parallel to the Y axis and a short direction parallel to the X axis. Through holes 41 are formed in the flexible wiring board 410 that overlap with the holes 512. The same number of through holes 41 are formed as the number of holes 512. For example, as shown in Figure 5, the planar shape and size of the through holes 41 are the same as the planar shape and size of the holes 512. Also, as shown in Figure 4, an opening 712 reaching the wiring 416 is formed on one surface 717 of the mold 710. The opening 712 extends, for example, along the Y-axis and has a longitudinal direction parallel to the Y-axis and a transverse direction parallel to the X-axis. For example, in a plan view, all the through holes 41 and holes 512 are located inside the opening 712. Face 511 is an example of the ninth face, hole 512 is an example of the first hole, and the Y-axis is an example of the first axis.

[0039] As shown in Figure 10, the lead terminal 621 has a surface 627 facing the laminate 616. In a plan view of surface 627, holes 628 are formed at a position away from the flexible wiring board 420. The same number of holes 628 as holes 512 are formed. The holes 628 reach partway through the thickness direction of the lead terminal 621. As shown in Figure 9, the holes 628 extend, for example, along the X-axis, and have a longitudinal direction parallel to the X-axis and a short direction parallel to the Y-axis. In a plan view, the holes 628 intersect with the holes 512. For example, in a plan view, the holes 512 and 628 are perpendicular to each other. Also, as shown in Figure 7, an opening 722 reaching the lead terminal 621 is formed on one surface 727 of the mold 720. The opening 722 extends, for example, along the Y-axis, and has a longitudinal direction parallel to the Y-axis and a short direction parallel to the X-axis. For example, in a plan view, all the holes 628 are inside the opening 722. Face 627 is an example of the 10th face, hole 628 is an example of the 2nd hole, and the X-axis is an example of the 2nd axis.

[0040] As shown in Figure 4, an opening 713 extending to the wiring 417 and an opening 714 extending to the wiring 416A are formed on one surface 717 of the mold 710. In addition, through holes 715 and 716 are formed in the mold 710, passing through the mold 710 along the Z axis. In a plan view, through hole 715 coincides with wiring 427, and through hole 716 coincides with wiring 426A.

[0041] As shown in Figure 7, an opening 723 extending to the wiring 427 and an opening 724 extending to the wiring 426A are formed on one surface 727 of the mold 720. In addition, through holes 725 and 726 are formed in the mold 720, penetrating the mold 720 along the Z axis. In a plan view, through hole 725 coincides with the wiring 417, and through hole 726 coincides with the wiring 416A. In a plan view, opening 723 coincides with through hole 715, opening 724 coincides with through hole 716, through hole 725 coincides with opening 713, and through hole 726 coincides with opening 714.

[0042] As shown in Figures 3 and 10, through holes 53, 54, 55, 56, and 57 are formed in the insulating film 50, penetrating the insulating film 50 along the Z-axis. In a plan view, through hole 53 overlaps with opening 713 and through hole 725, through hole 54 overlaps with opening 714 and through hole 726, through hole 55 overlaps with through hole 715 and opening 723, and through hole 56 overlaps with through hole 716 and opening 724. The same number of through holes 57 are formed as holes 512. In a plan view, through holes 57 overlap with holes 512, through hole 41, opening 712, opening 722, and hole 628.

[0043] As shown in Figure 1, the control terminal 171 penetrates the insulating film 50 and the mold 720, extending above the other surface 728 of the mold 720 through the opening 713, through hole 53, and through hole 725. The sense source terminal 172 penetrates the insulating film 50 and the mold 720, extending above the other surface 728 of the mold 720 through the opening 714, through hole 54, and through hole 726. As shown in Figure 2, the control terminal 271 penetrates the insulating film 50 and the mold 710, extending below the other surface 718 of the mold 710 through the opening 723, through hole 55, and through hole 715. The sense source terminal 272 penetrates the insulating film 50 and the mold 710, extending below the other surface 718 of the mold 710 through the opening 724, through hole 56, and through hole 716.

[0044] The conductive pin 60 can be made of a metal such as aluminum (Al) or copper (Cu), or an alloy containing at least one metal selected from these metals. The conductive pin 60 contacts the laminate 616 and the lead terminal 621, electrically connecting the laminate 616 and the lead terminal 621. The conductive pin 60 passes through the through hole 41, the opening 712, the through hole 57, and the opening 722, with one end of the conductive pin 60 (the Z2 side end) inserted into the hole 512 in the laminate 616 and the other end (the Z1 side end) inserted into the hole 628 in the lead terminal 621. The conductive pin 60 fits into the holes 512 and 628 and contacts the inner wall surfaces of the holes 512 and 628. The shape of the conductive pin 60 is, for example, a substantially cylindrical shape with a slit formed along its longitudinal direction. In this case, the shape of the cross-section of the conductive pin 60 perpendicular to its longitudinal direction is arc-shaped. The conductive pin 60 may be cylindrical or columnar. The conductive pin 60 may be polygonal tubular or polygonal prism. When the conductive pin 60 is cylindrical, it is more elastically deformable than when it is columnar, and is easier to make contact with the laminate 616 and lead terminal 621. When the conductive pin 60 is cylindrical with a slit formed along its longitudinal direction, it is even more elastically deformable and is easier to make contact with the laminate 616 and lead terminal 621. The easier the conductive pin 60 is to make contact with the laminate 616 and lead terminal 621, the better the reliability of the connection can be obtained. The conductive pin 60 is an example of the seventh conductive member.

[0045] As shown in Figure 10, the laminate 626 has a surface 521 facing the lead terminals 622 and in contact with the adhesive layer 422. Holes 522 may be formed in the surface 521. Multiple holes 522 may be formed, for example, two. For example, the holes 522 penetrate the shim 520 and the conductive adhesive layer 624 and reach partway along the thickness direction of the lead terminals 622. As shown in Figure 9, the holes 522 extend, for example, along the Y axis and have a longitudinal direction parallel to the Y axis and a short direction parallel to the X axis. Through holes 42 that overlap with the holes 522 may be formed in the flexible wiring board 420. The same number of through holes 42 may be formed as the number of holes 522. For example, as shown in Figure 8, the planar shape and size of the through holes 42 are the same as the planar shape and size of the holes 522. Also, as shown in Figure 7, an opening 729 reaching the wiring 426 may be formed on one surface 727 of the mold 720. The opening 729 extends, for example, along the Y-axis and has a longitudinal direction parallel to the Y-axis and a transverse direction parallel to the X-axis. For example, in a plan view, all the through holes 42 and holes 522 are located inside the opening 729.

[0046] As shown in Figure 10, the lead terminal 611 has a surface 617 facing the laminate 626. Holes 618 may be formed on the surface 617 at a position away from the flexible wiring board 410 in a plan view. The same number of holes 618 may be formed as the number of holes 522. The holes 618 reach partway along the thickness direction of the lead terminal 611. As shown in Figure 5, the holes 618 extend, for example, along the X-axis and have a longitudinal direction parallel to the X-axis and a short direction parallel to the Y-axis. The holes 618 intersect with the holes 522 in a plan view. For example, the holes 522 and 618 are perpendicular in a plan view. Also, as shown in Figure 4, an opening 719 reaching the lead terminal 611 may be formed on one surface 717 of the mold 710. The opening 719 extends, for example, along the Y-axis and has a longitudinal direction parallel to the Y-axis and a short direction parallel to the X-axis. For example, in a plan view, all the holes 618 are located inside the opening 719.

[0047] Here, the circuit configuration of the power module 1 according to the embodiment will be described. Figure 13 is a circuit diagram showing the power module according to the embodiment. For simplification, Figure 13 shows one of the two semiconductor elements 100 and one of the two semiconductor elements 200, but the two semiconductor elements 100 are connected in parallel with each other, and the two semiconductor elements 200 are connected in parallel with each other. The power module 1 has the half-bridge circuit shown in Figure 13.

[0048] As shown in Figure 13, the electrode 112 of semiconductor element 100 is electrically connected to lead terminal 611 as the P terminal, and the electrode 211 of semiconductor element 200 is electrically connected to lead terminal 622 as the N terminal via wiring 426 and shim 520. In addition, the electrode 111 of semiconductor element 100 is electrically connected to lead terminal 612 as the O terminal via wiring 416 and shim 510, and the electrode 212 of semiconductor element 200 is electrically connected to lead terminal 621 as the O terminal. Furthermore, lead terminals 612 and 621 are electrically connected to each other by conductive pins 60. The P terminal is the positive input terminal, the N terminal is the negative input terminal, and the O terminal is the output terminal. Therefore, currents flow in opposite directions between lead terminal 611 and the laminate 626.

[0049] Furthermore, the electrode 113 of semiconductor element 100 is electrically connected to the control terminal 171 via wiring 417, and the electrode 213 of semiconductor element 200 is electrically connected to the control terminal 271 via wiring 427. Therefore, a control signal is input to the electrode 113 of semiconductor element 100 from the control terminal 171, and a control signal is input to the electrode 213 of semiconductor element 200 from the control terminal 271.

[0050] In this way, in the power module 1, the semiconductor element 100 is bonded to one surface 413 of the insulating substrate 411, wiring 416 is laminated on the other surface 414 of the insulating substrate 411, the electrode 111 of the semiconductor element 100 is electrically connected to the wiring 416, and the electrode 112 of the semiconductor element 100 is electrically connected to the lead terminal 611. In addition, the semiconductor element 200 is bonded to one surface 423 of the insulating substrate 421, wiring 426 is laminated on the other surface 424 of the insulating substrate 421, the electrode 211 of the semiconductor element 200 is electrically connected to the wiring 426, and the electrode 212 of the semiconductor element 200 is electrically connected to the lead terminal 621. Furthermore, the wiring 416 and the lead terminal 621 are electrically connected to each other by the laminate 616 and conductive pins 60. In this way, a half-bridge circuit is configured. Furthermore, wiring 416 is located between semiconductor element 100 and wiring 426, and wiring 426 is located between semiconductor element 200 and wiring 426. In a plan view, the lead terminal 611 and the laminate 626 overlap. Therefore, the distance between the lead terminal 611 and the laminate 626, through which currents flow in opposite directions, can be reduced, significantly lowering the inductance. Also, in a plan view, the area occupied by lead terminals 611 and 622 can be reduced compared to a configuration where lead terminals 611 and 622 are aligned. Thus, according to this embodiment, a compact power module 1 can be obtained. Moreover, within the width range of molds 710 and 720 in the Y1-Y2 direction, increasing the width of lead terminals 611 and 622 in the Y1-Y2 direction has little effect on the overall size of the power module 1. Therefore, increasing the width of lead terminals 611 and 622 in the Y1-Y2 direction can also reduce the wiring resistance of lead terminals 611 and 622.

[0051] Furthermore, the X-axis is inclined from the Y-axis, and in a plan view, the Y-axis along which hole 512 is aligned and the X-axis along which hole 628 is aligned intersect. Therefore, even if a misalignment occurs between semiconductor package 10 and semiconductor package 20 in the XY plane, the conductive pins 60 can easily fit into holes 512 and 628.

[0052] Furthermore, since an insulating film 50 is provided between the semiconductor package 10 having the wiring 416 and lead terminals 611 and the semiconductor package 20 having the wiring 426 and laminate 626, it is less likely to cause a short circuit between the wiring 416 and lead terminals 611 and the wiring 426 and laminate 626.

[0053] In addition, holes 618 and openings 719 do not necessarily have to be formed in semiconductor package 10, and holes 522, through holes 42 and openings 729 do not necessarily have to be formed in semiconductor package 20. However, if these are formed, semiconductor packages 10 and 20 can have the same configuration, which is suitable for mass production of semiconductor packages 10 and 20.

[0054] The openings 711 and 721 contribute to heat dissipation. For example, the power module 1 is mounted on a heatsink such that the opening 711 or 721 faces the heatsink, and a thermal interface material (TIM) is provided between the lead terminals 611 or 621 and the heatsink.

[0055] Although preferred embodiments have been described in detail above, this disclosure is not limited to the embodiments described above, and various modifications and substitutions can be made to the embodiments described above without departing from the scope of the claims. [Explanation of Symbols]

[0056] 1 Power Module 10, 20 Semiconductor packages 50 insulating film 60 conductive pins 100, 200 semiconductor devices 111, 112, 113, 211, 212, 213 electrode 410, 420 Flexible Wiring Boards 411, 421 Insulating substrate 412, 422 Adhesive layer 415, 425 wiring layer 416, 416A, 417, 426, 426A, 427 wiring 510, 520 sims 611, 612, 621, 622 lead terminals 616, 626 laminate

Claims

1. A first semiconductor element having a first surface and a second surface opposite to the first surface, wherein a first electrode is provided on the first surface and a second electrode is provided on the second surface, A second semiconductor element having a third surface and a fourth surface opposite to the third surface, wherein a third electrode is provided on the third surface and a fourth electrode is provided on the fourth surface, A first insulating substrate having a fifth surface to which the first semiconductor element is bonded, and a sixth surface opposite to the fifth surface, A second insulating substrate having a seventh surface to which the second semiconductor element is bonded, and an eighth surface opposite to the seventh surface, A first conductive member penetrates the first insulating substrate, is electrically connected to the first electrode, and is laminated on the sixth surface of the first insulating substrate, A second conductive member electrically connected to the second electrode, A third conductive member is bonded to the fifth surface and electrically connected to the first conductive member, A fourth conductive member penetrates the second insulating substrate, is electrically connected to the third electrode, and is laminated on the eighth surface of the second insulating substrate, A fifth conductive member electrically connected to the fourth electrode, A sixth conductive member is bonded to the seventh surface and electrically connected to the fourth conductive member, A seventh conductive member electrically connects the third conductive member and the fifth conductive member, It has, The first conductive member is located between the first semiconductor element and the fourth conductive member. The fourth conductive member is located between the second semiconductor element and the first conductive member. The second conductive member and the sixth conductive member are power modules that overlap in a plan view.

2. In a plan view, the third conductive member and the fifth conductive member overlap. The third conductive member faces the fifth conductive member and has a ninth surface on which a first hole is formed. The fifth conductive member has a tenth surface facing the third conductive member and having a second hole formed therein. The power module according to claim 1, wherein the seventh conductive member fits into the first hole and the second hole.

3. In plan view, The first hole extends along the first axis, The power module according to claim 2, wherein the second hole extends along a second axis inclined from the first axis.

4. The power module according to claim 3, wherein the first axis and the second axis are orthogonal to each other.

5. The power module according to any one of claims 2 to 4, wherein the seventh conductive member is in contact with the inner wall surface of the first hole and the inner wall surface of the second hole.

6. The power module according to any one of claims 1 to 4, further comprising an insulating film provided between the first conductive member and the second conductive member and the fourth conductive member and the sixth conductive member.

7. The first semiconductor element has a fifth electrode provided on the first surface, The second semiconductor element has a sixth electrode provided on the third surface, An eighth conductive member penetrates the first insulating substrate, is electrically connected to the fifth electrode, and is laminated on the sixth surface of the first insulating substrate, A ninth conductive member penetrates the second insulating substrate, is electrically connected to the sixth electrode, and is laminated on the eighth surface of the second insulating substrate, A first control terminal electrically connected to the eighth conductive member, A second control terminal electrically connected to the ninth conductive member, A first sealing member that seals the first semiconductor element, the first conductive member, the second conductive member, the third conductive member, and the eighth conductive member, A second sealing member that seals the second semiconductor element, the fourth conductive member, the fifth conductive member, the sixth conductive member, and the ninth conductive member, It has, The first control terminal penetrates the insulating film and the second sealing member, The power module according to claim 6, wherein the second control terminal penetrates the insulating film and the first sealing member.

Images