Method for manufacturing a display device
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- SEMICON ENERGY LAB CO LTD
- Filing Date
- 2026-02-20
- Publication Date
- 2026-06-09
AI Technical Summary
【0019】 本発明の一態様によれば、高精細化が容易な表示装置、及びその作製方法を提供できる。または、高い表示品位と、高い精細度を兼ね備える表示装置を提供できる。または、コントラストの高い表示装置を提供できる。または、信頼性の高い表示装置を提供できる。
Smart Images
Figure 2026094222000001_ABST
Abstract
Claims
[Claim 1] A first step of forming a first pixel electrode, a second pixel electrode, and a first electrode, A second step of forming a first EL film on the first pixel electrode and the second pixel electrode, A third step of covering the first EL film and the first electrode to form a first sacrificial film, A fourth step involves etching the first sacrificial film and the first EL film to expose the second pixel electrode, and forming a first EL layer on the first pixel electrode, and a first sacrificial layer on the first EL layer and on the first electrode. A fifth step involves forming a second EL film on the first pixel electrode and the second pixel electrode, A sixth step of covering the second EL film and the first electrode to form a second sacrificial film, A seventh step involves etching the second sacrificial film and the second EL film to form a second EL layer on the second pixel electrode and a second sacrificial layer on the second EL layer. An eighth step involves removing the first sacrificial layer and the second sacrificial layer to expose the first EL layer, the second EL layer, and the first electrode. A ninth step involves forming a common layer on the first EL layer and the second EL layer, A method for manufacturing a display device, comprising a tenth step of forming a common electrode in contact with the common layer and the first electrode.