Indication device

Abstract

光検出機能を有する表示装置を提供する。【解決手段】第1の画素回路及び第2の画素回路を有し、第1の画素回路は、受光デバイス、第1のトランジスタ、及び第2のトランジスタを有し、第2の画素回路は、発光デバイスを有し、受光デバイスは、第1の画素電極、活性層、及び共通電極を有し、発光デバイスは、第2の画素電極、発光層、及び共通電極を有し、活性層は、第1の画素電極上に位置し、かつ、第1の有機化合物を有し、発光層は、第2の画素電極上に位置し、かつ、第1の有機化合物とは異なる第2の有機化合物を有し、共通電極は、活性層を介して第1の画素電極と重なる部分と、発光層を介して第2の画素電極と重なる部分と、を有し、第1のトランジスタは、半導体層に低温ポリシリコンを有し、第2のトランジスタは、半導体層に金属酸化物を有する、表示装置である。

Description

Technical Field

[0001] One aspect of the present invention relates to a display device, a display module, and an electronic device. One aspect of the present invention relates to a display device having a light receiving device (also referred to as a light receiving element) and a light emitting device (also referred to as a light emitting element). relates to a display device.

[0002] Note that one aspect of the present invention is not limited to the above technical field. Examples of the technical field of one aspect of the present invention include semiconductor devices, display devices, light emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), their driving methods, or their manufacturing methods. can be cited as an example.

Background Art

[0003] In recent years, display devices are expected to be applied to various uses. For example, as applications of large display devices, there are home television sets (also referred to as TVs or television receivers), digital signage, PID (Public c Information Display), etc. In addition, as portable information terminals, the development of smartphones and tablet terminals equipped with touch panels is in progress. c Information Display), etc. can be cited. Also, as portable information terminals, the development of smartphones and tablet terminals equipped with touch panels is in progress. As display devices, for example, light emitting devices having a light emitting device have been developed. A light emitting device (also referred to as an EL device or an EL element) that utilizes the electroluminescence (hereinafter abbreviated as EL) phenomenon is easy to make thin and lightweight,

[0004] can respond quickly to an input signal, and can be driven using a DC low voltage power supply, etc. characteristics such as being able to respond quickly to an input signal and being drivable using a DC low voltage power supply, etc. It has characteristics and is applied to display devices. For example, Patent Document 1 describes an organic EL device (organic A flexible light-emitting device is disclosed that incorporates an EL element (also known as an EL element). [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2014-197522 [Overview of the project] [Problems that the invention aims to solve]

[0006] One aspect of the present invention aims to provide a display device having a light detection function. One aspect of the present invention aims to provide a highly convenient display device. One objective of the present invention is to provide a multi-functional display device. One aspect of the present invention relates to the display quality One objective of the present invention is to provide a highly sensitive display device. One objective of the present invention is to provide a display device. One aspect of the present invention is to provide a device that is externally attached to the display device. One of the objectives is to simplify the circuit (also called the external circuit). One aspect of the present invention is a novel One of the objectives is to provide a display device.

[0007] Furthermore, the description of these problems does not preclude the existence of other problems. One aspect of the present invention is It is not necessarily required to resolve all of these issues. Specifications, drawings, invoices. It is possible to extract other issues from the descriptions in the sections. [Means for solving the problem]

[0008] One aspect of the present invention includes a first pixel circuit and a second pixel circuit, wherein the first pixel circuit receives light. A display device having a device, a first transistor, and a second transistor, wherein the second pixel circuit has a light-emitting device, the light-receiving device has a first pixel electrode, an active layer, and a common electrode, the light-emitting device has a second pixel electrode, a light-emitting layer, and a common electrode, the active layer is located on the first pixel electrode and has a first organic compound, the light-emitting layer is located on the second pixel electrode and has a second organic compound different from the first organic compound, the common electrode has a portion overlapping the first pixel electrode through the active layer and a portion overlapping the second pixel electrode through the light-emitting layer, the first transistor has low-temperature polysilicon in a semiconductor layer, and the second transistor has a metal oxide in the semiconductor layer. A display device having a light-receiving device, a first transistor, and a second transistor, wherein the second pixel circuit has a light-emitting device, the light-receiving device has a first pixel electrode, an active layer, and a common electrode, the light-emitting device has a second pixel electrode, a light-emitting layer, and a common electrode, the active layer is located on the first pixel electrode and has a first organic compound, the light-emitting layer is located on the second pixel electrode and has a second organic compound different from the first organic compound, the common electrode has a portion overlapping the first pixel electrode through the active layer and a portion overlapping the second pixel electrode through the light-emitting layer, the first transistor has low-temperature polysilicon in a semiconductor layer, and the second transistor has a metal oxide in the semiconductor layer. A display device having a light-receiving device, a first transistor, and a second transistor, wherein the second pixel circuit has a light-emitting device, the light-receiving device has a first pixel electrode, an active layer, and a common electrode, the light-emitting device has a second pixel electrode, a light-emitting layer, and a common electrode, the active layer is located on the first pixel electrode and has a first organic compound, the light-emitting layer is located on the second pixel electrode and has a second organic compound different from the first organic compound, the common electrode has a portion overlapping the first pixel electrode through the active layer and a portion overlapping the second pixel electrode through the light-emitting layer, the first transistor has low-temperature polysilicon in a semiconductor layer, and the second transistor has a metal oxide in the semiconductor layer. A display device having a light-receiving device, a first transistor, and a second transistor, wherein the second pixel circuit has a light-emitting device, the light-receiving device has a first pixel electrode, an active layer, and a common electrode, the light-emitting device has a second pixel electrode, a light-emitting layer, and a common electrode, the active layer is located on the first pixel electrode and has a first organic compound, the light-emitting layer is located on the second pixel electrode and has a second organic compound different from the first organic compound, the common electrode has a portion overlapping the first pixel electrode through the active layer and a portion overlapping the second pixel electrode through the light-emitting layer, the first transistor has low-temperature polysilicon in a semiconductor layer, and the second transistor has a metal oxide in the semiconductor layer. A display device having a light-receiving device, a first transistor, and a second transistor, wherein the second pixel circuit has a light-emitting device, the light-receiving device has a first pixel electrode, an active layer, and a common electrode, the light-emitting device has a second pixel electrode, a light-emitting layer, and a common electrode, the active layer is located on the first pixel electrode and has a first organic compound, the light-emitting layer is located on the second pixel electrode and has a second organic compound different from the first organic compound, the common electrode has a portion overlapping the first pixel electrode through the active layer and a portion overlapping the second pixel electrode through the light-emitting layer, the first transistor has low-temperature polysilicon in a semiconductor layer, and the second transistor has a metal oxide in the semiconductor layer. A display device having a light-receiving device, a first transistor, and a second transistor, wherein the second pixel circuit has a light-emitting device, the light-receiving device has a first pixel electrode, an active layer, and a common electrode, the light-emitting device has a second pixel electrode, a light-emitting layer, and a common electrode, the active layer is located on the first pixel electrode and has a first organic compound, the light-emitting layer is located on the second pixel electrode and has a second organic compound different from the first organic compound, the common electrode has a portion overlapping the first pixel electrode through the active layer and a portion overlapping the second pixel electrode through the light-emitting layer, the first transistor has low-temperature polysilicon in a semiconductor layer, and the second transistor has a metal oxide in the semiconductor layer. A display device having a light-receiving device, a first transistor, and a second transistor, wherein the second pixel circuit has a light-emitting device, the light-receiving device has a first pixel electrode, an active layer, and a common electrode, the light-emitting device has a second pixel electrode, a light-emitting layer, and a common electrode, the active layer is located on the first pixel electrode and has a first organic compound, the light-emitting layer is located on the second pixel electrode and has a second organic compound different from the first organic compound, the common electrode has a portion overlapping the first pixel electrode through the active layer and a portion overlapping the second pixel electrode through the light-emitting layer, the first transistor has low-temperature polysilicon in a semiconductor layer, and the second transistor has a metal oxide in the semiconductor layer. A display device having a light-receiving device, a first transistor, and a second transistor, wherein the second pixel circuit has a light-emitting device, the light-receiving device has a first pixel electrode, an active layer, and a common electrode, the light-emitting device has a second pixel electrode, a light-emitting layer, and a common electrode, the active layer is located on the first pixel electrode and has a first organic compound, the light-emitting layer is located on the second pixel electrode and has a second organic compound different from the first organic compound, the common electrode has a portion overlapping the first pixel electrode through the active layer and a portion overlapping the second pixel electrode through the light-emitting layer, the first transistor has low-temperature polysilicon in a semiconductor layer, and the second transistor has a metal oxide in the semiconductor layer.

[0009] One aspect of the present invention is a display device having a first pixel circuit and a second pixel circuit, wherein the first pixel circuit has a light-receiving device, a first transistor, and a second transistor, the second pixel circuit has a light-emitting device, the light-receiving device has a first pixel electrode, a common layer, an active layer, and a common electrode, the light-emitting device has a second pixel electrode, a common layer, a light-emitting layer, and a common electrode, the active layer is located on the first pixel electrode and has a first organic compound, the light-emitting layer is located on the second pixel electrode and has a second organic compound different from the first organic compound, the common electrode has a portion overlapping the first pixel electrode through the active layer and a portion overlapping the second pixel electrode through the light-emitting layer, the common layer is located on the first pixel electrode and the second pixel electrode and has a portion overlapping the active layer and a portion overlapping the light-emitting layer, the first transistor has low-temperature polysilicon in a semiconductor layer, and the second transistor has a metal oxide in the semiconductor layer. One aspect of the present invention is a display device having a first pixel circuit and a second pixel circuit, wherein the first pixel circuit has a light-receiving device, a first transistor, and a second transistor, the second pixel circuit has a light-emitting device, the light-receiving device has a first pixel electrode, a common layer, an active layer, and a common electrode, the light-emitting device has a second pixel electrode, a common layer, a light-emitting layer, and a common electrode, the active layer is located on the first pixel electrode and has a first organic compound, the light-emitting layer is located on the second pixel electrode and has a second organic compound different from the first organic compound, the common electrode has a portion overlapping the first pixel electrode through the active layer and a portion overlapping the second pixel electrode through the light-emitting layer, the common layer is located on the first pixel electrode and the second pixel electrode and has a portion overlapping the active layer and a portion overlapping the light-emitting layer, the first transistor has low-temperature polysilicon in a semiconductor layer, and the second transistor has a metal oxide in the semiconductor layer. One aspect of the present invention is a display device having a first pixel circuit and a second pixel circuit, wherein the first pixel circuit has a light-receiving device, a first transistor, and a second transistor, the second pixel circuit has a light-emitting device, the light-receiving device has a first pixel electrode, a common layer, an active layer, and a common electrode, the light-emitting device has a second pixel electrode, a common layer, a light-emitting layer, and a common electrode, the active layer is located on the first pixel electrode and has a first organic compound, the light-emitting layer is located on the second pixel electrode and has a second organic compound different from the first organic compound, the common electrode has a portion overlapping the first pixel electrode through the active layer and a portion overlapping the second pixel electrode through the light-emitting layer, the common layer is located on the first pixel electrode and the second pixel electrode and has a portion overlapping the active layer and a portion overlapping the light-emitting layer, the first transistor has low-temperature polysilicon in a semiconductor layer, and the second transistor has a metal oxide in the semiconductor layer. One aspect of the present invention is a display device having a first pixel circuit and a second pixel circuit, wherein the first pixel circuit has a light-receiving device, a first transistor, and a second transistor, the second pixel circuit has a light-emitting device, the light-receiving device has a first pixel electrode, a common layer, an active layer, and a common electrode, the light-emitting device has a second pixel electrode, a common layer, a light-emitting layer, and a common electrode, the active layer is located on the first pixel electrode and has a first organic compound, the light-emitting layer is located on the second pixel electrode and has a second organic compound different from the first organic compound, the common electrode has a portion overlapping the first pixel electrode through the active layer and a portion overlapping the second pixel electrode through the light-emitting layer, the common layer is located on the first pixel electrode and the second pixel electrode and has a portion overlapping the active layer and a portion overlapping the light-emitting layer, the first transistor has low-temperature polysilicon in a semiconductor layer, and the second transistor has a metal oxide in the semiconductor layer. One aspect of the present invention is a display device having a first pixel circuit and a second pixel circuit, wherein the first pixel circuit has a light-receiving device, a first transistor, and a second transistor, the second pixel circuit has a light-emitting device, the light-receiving device has a first pixel electrode, a common layer, an active layer, and a common electrode, the light-emitting device has a second pixel electrode, a common layer, a light-emitting layer, and a common electrode, the active layer is located on the first pixel electrode and has a first organic compound, the light-emitting layer is located on the second pixel electrode and has a second organic compound different from the first organic compound, the common electrode has a portion overlapping the first pixel electrode through the active layer and a portion overlapping the second pixel electrode through the light-emitting layer, the common layer is located on the first pixel electrode and the second pixel electrode and has a portion overlapping the active layer and a portion overlapping the light-emitting layer, the first transistor has low-temperature polysilicon in a semiconductor layer, and the second transistor has a metal oxide in the semiconductor layer. One aspect of the present invention is a display device having a first pixel circuit and a second pixel circuit, wherein the first pixel circuit has a light-receiving device, a first transistor, and a second transistor, the second pixel circuit has a light-emitting device, the light-receiving device has a first pixel electrode, a common layer, an active layer, and a common electrode, the light-emitting device has a second pixel electrode, a common layer, a light-emitting layer, and a common electrode, the active layer is located on the first pixel electrode and has a first organic compound, the light-emitting layer is located on the second pixel electrode and has a second organic compound different from the first organic compound, the common electrode has a portion overlapping the first pixel electrode through the active layer and a portion overlapping the second pixel electrode through the light-emitting layer, the common layer is located on the first pixel electrode and the second pixel electrode and has a portion overlapping the active layer and a portion overlapping the light-emitting layer, the first transistor has low-temperature polysilicon in a semiconductor layer, and the second transistor has a metal oxide in the semiconductor layer. One aspect of the present invention is a display device having a first pixel circuit and a second pixel circuit, wherein the first pixel circuit has a light-receiving device, a first transistor, and a second transistor, the second pixel circuit has a light-emitting device, the light-receiving device has a first pixel electrode, a common layer, an active layer, and a common electrode, the light-emitting device has a second pixel electrode, a common layer, a light-emitting layer, and a common electrode, the active layer is located on the first pixel electrode and has a first organic compound, the light-emitting layer is located on the second pixel electrode and has a second organic compound different from the first organic compound, the common electrode has a portion overlapping the first pixel electrode through the active layer and a portion overlapping the second pixel electrode through the light-emitting layer, the common layer is located on the first pixel electrode and the second pixel electrode and has a portion overlapping the active layer and a portion overlapping the light-emitting layer, the first transistor has low-temperature polysilicon in a semiconductor layer, and the second transistor has a metal oxide in the semiconductor layer. One aspect of the present invention is a display device having a first pixel circuit and a second pixel circuit, wherein the first pixel circuit has a light-receiving device, a first transistor, and a second transistor, the second pixel circuit has a light-emitting device, the light-receiving device has a first pixel electrode, a common layer, an active layer, and a common electrode, the light-emitting device has a second pixel electrode, a common layer, a light-emitting layer, and a common electrode, the active layer is located on the first pixel electrode and has a first organic compound, the light-emitting layer is located on the second pixel electrode and has a second organic compound different from the first organic compound, the common electrode has a portion overlapping the first pixel electrode through the active layer and a portion overlapping the second pixel electrode through the light-emitting layer, the common layer is located on the first pixel electrode and the second pixel electrode and has a portion overlapping the active layer and a portion overlapping the light-emitting layer, the first transistor has low-temperature polysilicon in a semiconductor layer, and the second transistor has a metal oxide in the semiconductor layer. One aspect of the present invention is a display device having a first pixel circuit and a second pixel circuit, wherein the first pixel circuit has a light-receiving device, a first transistor, and a second transistor, the second pixel circuit has a light-emitting device, the light-receiving device has a first pixel electrode, a common layer, an active layer, and a common electrode, the light-emitting device has a second pixel electrode, a common layer, a light-emitting layer, and a common electrode, the active layer is located on the first pixel electrode and has a first organic compound, the light-emitting layer is located on the second pixel electrode and has a second organic compound different from the first organic compound, the common electrode has a portion overlapping the first pixel electrode through the active layer and a portion overlapping the second pixel electrode through the light-emitting layer, the common layer is located on the first pixel electrode and the second pixel electrode and has a portion overlapping the active layer and a portion overlapping the light-emitting layer, the first transistor has low-temperature polysilicon in a semiconductor layer, and the second transistor has a metal oxide in the semiconductor layer. One aspect of the present invention is a display device having a first pixel circuit and a second pixel circuit, wherein the first pixel circuit has a light-receiving device, a first transistor, and a second transistor, the second pixel circuit has a light-emitting device, the light-receiving device has a first pixel electrode, a common layer, an active layer, and a common electrode, the light​​​

[0010] The common layer preferably has a layer that functions as a hole injection layer of the light-emitting device.

[0011] The common layer preferably has a layer that functions as a hole transport layer of the light-emitting device.

[0012] The common layer preferably has a layer that functions as an electron transport layer of the light-emitting device.

[0013] The common layer preferably has a layer that functions as an electron injection layer of the light-emitting device.

[0014] The second pixel circuit preferably further includes a third transistor having low-temperature polysilicon in a semiconductor layer. Alternatively, the second pixel circuit preferably further includes a third transistor having a metal oxide in a semiconductor layer. Preferably, the display device according to one aspect of the present invention further includes a resin layer, a light-shielding layer, and a substrate.

[0015] The resin layer and the light-shielding layer are preferably each located between the common electrode and the substrate. The resin layer preferably has an opening overlapping with the light-receiving device. The resin layer preferably has a portion overlapping with the light-emitting device.

[0016] The resin layer preferably has an opening overlapping with the light-receiving device. The resin layer preferably has a portion overlapping with the light-emitting device. The light-shielding layer preferably has a portion located between the common electrode and the resin layer. The light-shielding layer preferably has a portion located between the common electrode and the resin layer. The light-shielding layer preferably covers at least a part of at least a part of the opening and the side surface of the resin layer exposed at the opening.

[0017]

[0017] Alternatively, the resin layer is preferably provided in an island shape and has a portion overlapping with the light-emitting device. The light-shielding layer preferably has a portion located between the common electrode and the resin layer. At least a part of the light passing through the substrate is incident on the light-receiving device without passing through the resin layer. Preferably, the light-shielding layer covers at least a portion of the side surface of the resin layer.

[0018] A display device according to one aspect of the present invention preferably further has an adhesive layer. The adhesive layer is common It is preferable that the electrode and the substrate be located between them. The resin layer and the light-shielding layer are, respectively, located between the adhesive layer and the substrate. It is preferable that it be located between the substrate and the adhesive layer. The adhesive layer has a first portion that overlaps with the photodetector, Preferably, the first part has a second part that overlaps with the light-emitting device. A thicker thickness is preferable compared to the volume.

[0019] A display device according to one aspect of the present invention is preferably flexible.

[0020] One aspect of the present invention has a display device having any of the above configurations, and a flexible printed circuit board A board (Flexible Printed Circuit, hereinafter referred to as FPC) or This is equipped with connectors such as TCP (Tape Carrier Package). Module, or COG (Chip On Glass) method or COF (Chip On Glass) method Modules such as modules on which integrated circuits (ICs) are mounted using methods such as p-on-film. It is.

[0021] One aspect of the present invention includes the above module, an antenna, a battery, a housing, a camera, and a speaker. It is an electronic device having at least one of the following: a microphone and an operation button. [Effects of the Invention]

[0022] According to one aspect of the present invention, a display device having a light detection function can be provided. This enables the provision of a highly convenient display device. According to one aspect of the present invention, a multi-functional display device is provided. It can be provided. According to one aspect of the present invention, a display device with high display quality can be provided. Depending on the method, a display device with high sensitivity for light detection can be provided. According to one aspect of the present invention, a display device The external circuitry can be simplified. According to one aspect of the present invention, a novel display device can be provided.

[0023] Furthermore, the description of these effects does not preclude the existence of other effects. One aspect of the present invention is It is not necessarily required to have all of these effects. It is possible to extract effects other than those mentioned above. [Brief explanation of the drawing]

[0024] [Figure 1] Figures 1A to 1D are cross-sectional views showing an example of a display device. Figures 1E to 1I are top views showing an example of a pixel. [Figure 2] Figure 2 is a cross-sectional view showing an example of a display device. [Figure 3] Figure 3A is a cross-sectional view showing an example of a display device. Figures 3B and 3C show examples of the top surface layout of the resin layer. [Figure 4] Figures 4A and 4B are cross-sectional views showing an example of a display device. [Figure 5] Figures 5A to 5C are cross-sectional views showing an example of a display device. [Figure 6] Figures 6A to 6C are cross-sectional views showing an example of a display device. [Figure 7] Figure 7A is a top view showing an example of a display device. Figure 7B is a cross-sectional view showing an example of a display device. [Figure 8] Figures 8A and 8B are cross-sectional views showing an example of a display device. [Figure 9] Figure 9A is a top view showing an example of a display device. Figure 9B is a cross-sectional view showing an example of a display device. [Figure 10] Figure 10A is a top view showing an example of a display device. Figure 10B is a cross-sectional view showing an example of a display device. [Figure 11] Figures 11A and 11B are cross-sectional views showing an example of a display device. [Figure 12] Figures 12A and 12B are cross-sectional views showing an example of a display device. [Figure 13] Figure 13 is a perspective view showing an example of a display device. [Figure 14] Figure 14 is a cross-sectional view showing an example of a display device. [Figure 15] Figures 15A and 15B are cross-sectional views showing an example of a display device. [Figure 16] Figure 16 is a cross-sectional view showing an example of a display device. [Figure 17] Figure 17A is a cross-sectional view showing an example of a display device. Figure 17B is a cross-sectional view showing an example of a transistor. [Figure 18] Figures 18A and 18B are circuit diagrams showing an example of a pixel circuit. [Figure 19] Figures 19A and 19B are top views showing an example of a display device. [Figure 20] Figures 20A and 20B show examples of electronic devices. [Figure 21] Figures 21A to 21D show examples of electronic devices. [Figure 22] Figures 22A to 22F show examples of electronic devices. [Modes for carrying out the invention]

[0025] Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. Without departing from the spirit and scope of the present invention, its form and details may be modified in various ways. It will be easily understood by those skilled in the art to obtain this. Therefore, the present invention is as shown in the embodiments below. The interpretation is not limited to the content stated herein.

[0026] In the configuration of the invention described below, the same part or part having a similar function is used. The same symbol is used consistently across different drawings, and explanations of its repetition are omitted. When referring to a function, the same hatch pattern may be used, and a specific symbol may not be assigned.

[0027] Furthermore, the position, size, and extent of each component shown in the drawings are, for the sake of ease of understanding, actually The location, size, and range may not be described. Therefore, the disclosed invention is not always Furthermore, it is not limited to the location, size, scope, etc., disclosed in the drawings.

[0028] Furthermore, the words "membrane" and "layer" may differ depending on the context or situation. And they can be interchanged. For example, the term "conductive layer" can be replaced with "conductive film." It is possible to change the term to this. Or, for example, the term "insulating film" can be changed to It is possible to change the term to "insulating layer".

[0029] (Embodiment 1) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 1 to 17.

[0030] The display device of this embodiment has a light-receiving device and a light-emitting device in the display unit. In a display device of this form, light-emitting devices are arranged in a matrix on the display section, and the display The display unit can display an image. Furthermore, the display unit has a matrix of light-receiving devices. They are arranged in a hierarchical manner, and the display unit also functions as a light receiving unit. The light receiving unit is an image sensor. It can be used in touch sensors. In other words, by detecting light with the light-receiving part, it can capture an image. It can capture images and detect the proximity or contact of objects (such as fingers or pens). Furthermore, the display device of this embodiment can utilize the light-emitting device as the light source of the sensor. Yes, it is possible. Therefore, it is not necessary to provide a light receiving unit and light source separately from the display device, and the electronic components Points can be reduced.

[0031] In the display device of this embodiment, when the light emitted by the light-emitting device of the display unit is reflected by the object, Because the light-receiving device can detect the reflected light, imaging and touch (near touch) can be performed even in dark places. (Including Chi) can be detected.

[0032] The display device of this embodiment has the function of displaying an image using a light-emitting device. The light-emitting device functions as a display device.

[0033] As for light-emitting devices, OLED (Organic Light Emitting Diode) iode) and QLED(Quantum-dot Light Emitting Di) It is preferable to use an EL device such as an ode. The light-emitting material of the EL device and For example, fluorescent materials, phosphorescent materials, inorganic compounds ( (Quantum dot materials, etc.), materials that exhibit thermally activated delayed fluorescence (Therma lly Activated Delayed Fluorescence (TADF) Examples include materials. Also, as a light-emitting device, there are microLEDs (Light E LEDs such as miting diodes can also be used.

[0034] The display device of this embodiment has the function of detecting light using a light-receiving device.

[0035] When a light-receiving device is used as an image sensor, the display device of this embodiment is the light-receiving device Images can be captured using this. For example, the display device of this embodiment is a scanner It can be used as such.

[0036] For example, using an image sensor to acquire data such as fingerprints, palm prints, or iris scans. This is possible. In other words, a biometric authentication sensor can be built into the display device of this embodiment. It is possible. By having the display device have a built-in biometric authentication sensor, a separate biometric authentication sensor can be installed in addition to the display device. Compared to cases where a siphon is used, the number of components in electronic devices can be reduced, resulting in smaller and lighter electronic devices. It is possible to transform it.

[0037] Additionally, an image sensor can be used to capture the user's facial expressions, eye movements, or changes in pupil diameter. Data can be obtained. By analyzing this data, information about the user's physical and mental state can be obtained. It can be obtained. Based on this information, the output content of either the display or the audio, or both, can be changed. By doing so, for example, VR (Virtual Reality) devices, AR (Au Equipment for Mixed Reality (MR), or Mixed Reality (MR) In devices for ) users, it is possible to ensure that users can use the device safely.

[0038] Furthermore, when the light receiving device is used as a touch sensor, the display device of this embodiment is a light receiving device A chair can be used to detect the proximity or contact of an object.

[0039] For example, a pn-type or pin-type photodiode can be used as the light-receiving device. This is possible. The light receiving device detects the light incident on it and generates an electric charge using photoelectric transformation. It functions as a conversion device. The amount of charge generated is determined based on the amount of incident light.

[0040] In particular, an organic photodiode having a layer containing an organic compound is used as the light-receiving device. This is preferable. Organic photodiodes are easily made thinner, lighter, and larger in area. Furthermore, its high degree of freedom in shape and design allows it to be applied to various display devices.

[0041] In one aspect of the present invention, an organic EL device is used as the light-emitting device, and as the light-receiving device Organic photodiodes are used. The organic EL device and the organic photodiode are made of the same material. It can be formed on a plate. Therefore, organic EL devices can be used in display devices. It can incorporate a photodiode.

[0042] If you try to fabricate all the layers that make up an organic EL device and an organic photodiode, This results in a very large number of film deposition steps. Organic photodiodes have a common configuration with organic EL devices. Because there are many layers that can be formed, layers that can have a common structure can be deposited all at once, reducing the number of deposition steps. This can be suppressed. Furthermore, even with the same number of deposition cycles, the film may only be deposited on some devices. By reducing the number of layers, the effect of misalignment of the deposition pattern is reduced, and the deposition mask (meta Reduce the impact of dust (including tiny foreign objects called particles) attached to masks, etc. This makes it possible to reduce, etc. This will improve the yield of the display device manufacturing. can.

[0043] For example, one of a pair of electrodes (the common electrode) is used in common by both the light-receiving device and the light-emitting device. It can be a layer. For example, a hole injection layer, a hole transport layer, an electron transport layer, and an electron It is preferable that at least one of the injection layers be a common layer for both the photodetector and the light-emitting device. It is also possible to create separate active layers for a light-receiving device and light-emitting layers for a light-emitting device. Other layers can have the same configuration for both the light-emitting device and the light-receiving device. Furthermore, the light-receiving device and the light-emitting device have a common layer, reducing the number of deposition cycles and the number of masks. This can reduce the number of steps involved in manufacturing the display device, thereby reducing the manufacturing process and costs.

[0044] Furthermore, the layers that are common to both the light-receiving device and the light-emitting device have functions in the light-receiving device and The functions may differ in light-emitting devices. In this specification, the functions in light-emitting devices may differ. Components are named based on their function. For example, a hole injection layer is a hole injection layer in a light-emitting device. It functions as a hole injection layer and as a hole transport layer in photodetectors. Similarly, electron The injection layer functions as an electron injection layer in light-emitting devices and as an electron injection layer in light-receiving devices. It functions as a transport layer.

[0045] In one embodiment of the present invention, a display device has a pixel circuit having a light-receiving device and a light-emitting device. All transistors in the pixel circuit have a metal oxide layer in the semiconductor layer where the channel is formed. A transistor (also called an oxide semiconductor) containing a material (hereinafter referred to as an OS transistor) It is preferable to use the OS transistor, which has an extremely small off-current. It is possible to retain the charge stored in a capacitor connected in series with a star for a long period of time. Furthermore, by using OS transistors, the power consumption of the display device can be reduced. .

[0046] Alternatively, in a display device according to one aspect of the present invention, a pixel circuit having a light-receiving device and a light-emitting device In all transistors included in a pixel circuit having a channel, the semiconductor layer in which the channel is formed has a It is preferable to use a transistor with a recon (hereinafter also called a Si transistor). Examples of silicon include single-crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, low-temperature polysilicon (LTPS) is used in semiconductor layers. Transistors containing poly-silicon (hereinafter also known as LTPS transistors) It is preferable to use (the term). LTPS transistors have high field-effect mobility and are fast moving. It is possible to create it.

[0047] Furthermore, by using Si transistors such as LTPS transistors, CMOS circuits can be used. This makes it easy to integrate the various circuits that make up the system onto the same circuit board as the display unit. This allows for the simplification of external circuits implemented in the device, reducing component costs and implementation costs. It is possible.

[0048] Alternatively, in a display device according to one aspect of the present invention, a pixel circuit having a light-receiving device is provided with two types of light It is preferable to use a transistor. Specifically, the pixel circuit uses an OS transistor and Preferably, the transistor has an LTPS transistor. Accordingly, by changing the material of the semiconductor layer, the quality of the pixel circuit having a light-receiving device can be improved. This can improve the accuracy of sensing and imaging. In this case, the pixel rotation of the light-emitting device The circuit may use either an OS transistor or an LTPS transistor, or both. You may use it.

[0049] Furthermore, even when using two types of transistors, by using an LTPS transistor... This makes it easier to integrate various circuits, which are composed of CMOS circuits, onto the same circuit board as the display unit. This simplifies the external circuitry implemented in the display device, reducing component costs and costs. Installation costs can be reduced.

[0050] In the display surface of a display device according to one aspect of the present invention, light is extracted from a light-emitting device, and, Light irradiated onto the light-receiving device passes through. The display device is connected to the light-emitting device and the light-receiving device. It is preferable to have a light-shielding layer on the display surface side. Light emitted from the light-emitting device is blocked by the light-shielding layer. It is removed to the outside of the display device through an opening (or an area where a light-shielding layer is not provided). Preferably, the light-receiving device has an opening in the light-shielding layer (or an area where the light-shielding layer is not provided). It is preferable that light is irradiated through the (region).

[0051] The light-receiving device detects the light emitted by the light-emitting device that has been reflected by the object. The light emitted from the light-emitting device is reflected within the display device and enters the light-receiving device without passing through an object. In some cases, stray light may be emitted. Such stray light becomes noise during light detection, affecting the signal-to-noise ratio (S / N ratio). This is a factor that reduces the luminescence-to-noise ratio. By providing a light-shielding layer on the display side of the light-receiving device, the effects of stray light can be suppressed. This reduces noise and increases the sensitivity of sensors using light-receiving devices. Cut.

[0052] The closer the light-shielding layer is to the light-emitting device, the more it suppresses stray light from the light-emitting device within the display device. This allows for increased sensor sensitivity. Also, the light-shielding layer is located close to the light-emitting device. The more you do this, the more you suppress the decrease in contrast and the change in chromaticity when observing the display device from an oblique angle. This allows for improved viewing angle characteristics of the display. On the other hand, the light-shielding layer is affected by the light-receiving device. The further away the object is, the smaller the area of ​​the imaging range of the light-receiving device can be, and the resolution of the image can be improved. The degree can be increased.

[0053] Therefore, in one aspect of the present invention, the distance from the light-shielding layer to the light-receiving device and the distance from the light-shielding layer to the light-emitting device A structure (e.g., a resin layer) is placed on the surface forming the light-shielding layer so that there is a difference in distance to the vise. By adjusting the layout and thickness of the structure, the light-shielding layer can be extended to the light-receiving device. This allows for increasing the distance between the light-shielding layer and the light-emitting device, while simultaneously shortening the distance from the light-shielding layer to the light-emitting device. This reduces sensor noise, increases imaging resolution, and improves display's field of view dependency. This can suppress the quality of the display and the image quality in the display device. It can improve.

[0054] Specifically, a display device according to one aspect of the present invention further comprises a resin layer, a light-shielding layer, and a substrate. Preferably, the resin layer and the light-shielding layer are located between the common electrode and the substrate. It is preferable.

[0055] At least a portion of the light emitted by the light-emitting device is extracted to the outside of the substrate through the resin layer. At least a portion of the light that passes through the substrate enters the photodetector without going through the resin layer. For example, the resin layer has an aperture that overlaps with the light-receiving device. Or, the resin layer has an aperture that overlaps with the light-emitting device. It is placed in an island-like shape, overlapping with the chairs.

[0056] The resin layer is provided in a position that overlaps with the light-emitting device, and in a position that overlaps with the light-receiving device. Therefore, the distance from the light-shielding layer to the light-emitting device is the distance from the light-shielding layer to the light-receiving device. This results in a shorter distance compared to the previous distance. This improves both the display quality and the imaging quality in the display device. It can improve.

[0057] Figures 1A to 1D show cross-sectional views of a display device according to one embodiment of the present invention.

[0058] The display device 50A shown in Figure 1A has a layer having a light-receiving device between substrate 51 and substrate 59. It has a layer 53 and a layer 57 having a light-emitting device.

[0059] The display device 50B shown in Figure 1B has a layer having a light-receiving device between substrate 51 and substrate 59. 53 has a layer 55 having a transistor, and a layer 57 having a light-emitting device.

[0060] Display devices 50A and 50B emit red (R) light from a layer 57 having a light-emitting device. The device is configured to emit green (G) and blue (B) light.

[0061] A display device according to one aspect of the present invention has a plurality of pixels arranged in a matrix. Each element has one or more subpixels. Each subpixel has one light-emitting device. For example, For example, a pixel may have three subpixels (using three colors: R, G, and B, or yellow (Y), sheath). (For example, a three-color system consisting of C, M, and R, G) or a configuration having four subpixels (R, G Four colors (B, W, or R, G, B, Y) can be applied. Furthermore, Each pixel has a light-receiving device. A light-receiving device may be provided for all pixels. It may be provided on some pixels. Also, one pixel may have multiple light-receiving devices. That's fine.

[0062] The layer 55 having transistors has a first transistor and a second transistor. This is preferable. The first transistor is electrically connected to the light receiving device. The second transistor The luminescent device is electrically connected to the light-emitting device.

[0063] A display device according to one aspect of the present invention has a function for detecting an object such as a finger that is in contact with the display device. They may have. For example, as shown in Figure 1C, in layer 57 having a light-emitting device The light emitted by the light-emitting device is reflected by the finger 52 in contact with the display device 50B, thereby receiving the light. The light-receiving device in layer 53, which has a vice, detects the reflected light. This allows the display The device 50B can be detected when the finger 52 comes into contact with it.

[0064] A display device according to one aspect of the present invention is located in close proximity to the display device 50B, as shown in Figure 1D. It may have the function of detecting or imaging objects (that it is not touching).

[0065] [Pixels] Figures 1E to 1I show examples of pixels.

[0066] The pixels shown in Figures 1E to 1G consist of three subpixels (three light-emitting devices) labeled R, G, and B, and a receiving pixel. The optical device PD has three subpixels and a light receiving element in a 2x2 matrix. Figure 1E shows three subpixels and a light receiving element in a 2x2 matrix. Figure 1F shows an example of the arrangement of the device PD, with three subpixels and a light-receiving device in a single horizontal row. This is an example of where vice PDs are arranged. Figure 1G shows three subpixels arranged in a horizontal row. This is an example where a light-receiving device (PD) is placed below it. Note that the pixels shown in Figures 1E to 1G are... Each of these consists of four subpixels: three used for display and one used for light detection. It can also be said that it is composed of sub-pixels.

[0067] The pixel shown in Figure 1H consists of four subpixels (four light-emitting devices) labeled R, G, B, and W, and a light-receiving device. It has Vice PD and

[0068] The pixel shown in Figure 1I consists of three subpixels, R, G, and B, and an IR light-emitting device that emits infrared light. It has a light-receiving device PD. In this case, the light-receiving device PD has a function to detect infrared light. It is preferable that the light receiving device PD has the function of detecting both visible light and infrared light. It may have the following characteristics: Depending on the application of the sensor, the wavelength of light detected by the photodetector PD is determined. It can be determined.

[0069] In the following, using Figures 2 to 12, we will describe the light-emitting device and the display device having one aspect of the present invention. The detailed configuration of the light-receiving device will be described below.

[0070] A display device according to one aspect of the present invention emits light in the direction opposite to the substrate on which the light-emitting device is formed. A top-emission type that emits light, with the light-emitting device being formed on the substrate side. It can be either a Muemission type or a dual-emission type that emits light from both sides. .

[0071] Figures 2 to 12 illustrate the concept using a top-emission type display device as an example.

[0072] In this embodiment, the light-emitting device mainly emits visible light, and the light-receiving device detects visible light. A device and a display device having a device are described, and the display device further emits infrared light. It may have a light-emitting device. Furthermore, the light-receiving device may have a configuration that detects infrared light. Alternatively, the system may be configured to detect both visible light and infrared light.

[0073] [Display device 10] Figure 2 shows a cross-sectional view of the display device 10.

[0074] The display device 10 includes a light receiving device 110 and a light emitting device 190.

[0075] The light-emitting device 190 includes a pixel electrode 191, a buffer layer 192, a light-emitting layer 193, and a buffer layer It has 194 and a common electrode 115. The light-emitting layer 193 has an organic compound. Chair 190 has the function of emitting visible light. Furthermore, the display device 10 emits infrared light. It may have a light-emitting device that has the function of emitting light. In this embodiment, the pixel electrode 19 Let's explain using the example where electrode 1 functions as the anode and the common electrode 115 functions as the cathode. .

[0076] The light receiving device 110 includes a pixel electrode 181, a buffer layer 182, an active layer 183, and a buffer layer It has 184 and a common electrode 115. The active layer 183 has an organic compound. Chair 110 has the function of detecting visible light. Furthermore, the light receiving device 110 also has the function of detecting visible light. It may also have a function to detect infrared light. In this embodiment, it is paired with the light-emitting device 190. Furthermore, the pixel electrode 181 functions as the anode and the common electrode 115 functions as the cathode. Let me explain. In other words, the light receiving device 110 is positioned between the pixel electrode 181 and the common electrode 115. By applying a reverse bias and driving it, the display device 10 receives light incident on the light receiving device 110. It can detect light, generate an electric charge, and extract it as an electric current.

[0077] Pixel electrode 181, pixel electrode 191, buffer layer 182, buffer layer 192, active layer 183 The light-emitting layer 193, buffer layer 184, buffer layer 194, and common electrode 115 are each It may be a single-layer structure or a laminated structure.

[0078] Pixel electrodes 181 and 191 are located on the insulating layer 214. The elementary electrode 191 can be formed using the same material and the same process. The ends and the ends of the pixel electrodes 191 are each covered by partition walls 216. The pole 181 and the pixel electrode 191 are electrically insulated from each other by the partition wall 216. (It can also be said that they are separated in a specific way.)

[0079] An organic insulating film is preferred as the partition wall 216. For example, acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide Mido resins, siloxane resins, benzocyclobutene resins, phenolic resins, and these resins Examples include lipid precursors. The septum 216 is a layer that transmits visible light. Further details will be described later. However, instead of the partition wall 216, a partition wall 217 that blocks visible light may be provided.

[0080] The buffer layer 182 is located on the pixel electrode 181. The active layer 183 is located on the buffer layer 182 It overlaps with the pixel electrode 181 via this. The buffer layer 184 is located on the active layer 183. The active layer 183 overlaps with the common electrode 115 via the buffer layer 184. Buffer layer 18 Layer 2 may have a hole transport layer. The buffer layer 184 may have an electron transport layer. It is possible.

[0081] The buffer layer 192 is located on the pixel electrode 191. The light-emitting layer 193 is located on the buffer layer 192 It overlaps with the pixel electrode 191 via this. The buffer layer 194 is located on the light-emitting layer 193. The light-emitting layer 193 overlaps with the common electrode 115 via the buffer layer 194. Buffer layer 19 Layer 2 may have one or both of a hole injection layer and a hole transport layer. Buffer layer 1 94 may have one or both of the electron injection layer and the electron transport layer.

[0082] The common electrode 115 is a layer used in common by the light-receiving device 110 and the light-emitting device 190. ru.

[0083] The materials and film thickness of the pair of electrodes in the light-receiving device 110 and the light-emitting device 190 are the same. This makes it possible to reduce the manufacturing cost of the display device and simplify the manufacturing process. can.

[0084] The display device 10 has a light receiving device 110 between a pair of substrates (substrate 151 and substrate 152). It includes a light-emitting device 190, a transistor 41, and a transistor 42, etc.

[0085] In the light-receiving device 110, the following are located between the pixel electrode 181 and the common electrode 115, respectively. The buffer layer 182, the active layer 183, and the buffer layer 184 are organic layers (containing organic compounds). It can also be called a layer. The pixel electrode 181 preferably has the function of reflecting visible light. The common electrode 115 has the function of transmitting visible light. Note that the light receiving device 110 is red In a configuration that detects ambient light, the common electrode 115 has the function of transmitting infrared light. Preferably, the pixel electrode 181 has the function of reflecting infrared light.

[0086] The light-receiving device 110 has the function of detecting light. Specifically, the light-receiving device 110 The photoelectric converter receives light 22 incident from outside the display device 10 and converts it into an electrical signal. It is a vice. Light 22 is also the light reflected by the object from the light-emitting device 190. Yes, it is possible. Furthermore, the light 22 may be incident on the light receiving device 110 via a lens, which will be described later. .

[0087] In the light-emitting device 190, the following are located between the pixel electrode 191 and the common electrode 115, respectively. The buffer layer 192, the light-emitting layer 193, and the buffer layer 194 can also be called an EL layer. The pixel electrode 191 preferably has the function of reflecting visible light. The common electrode 115 is It has the function of transmitting visible light. Furthermore, the display device 10 is a light-emitting device that emits infrared light. In this configuration, the common electrode 115 has the function of transmitting infrared light. Furthermore, pixels Electrode 191 preferably has the function of reflecting infrared light.

[0088] The light-emitting device of the display device of this embodiment includes a micro-optical resonator (microcavity It is preferable that a structure is applied. Therefore, the pair of electrodes that the light-emitting device has One of them has an electrode that is transparent to and reflective of visible light (a semi-transmissive / semi-reflective electrode). It is preferable that the other has an electrode (reflective electrode) that is reflective to visible light. This is preferable. The light-emitting device has a microcavity structure, which allows light to be obtained from the light-emitting layer. The light emitted can be made to resonate between the two electrodes, thereby intensifying the light emitted from the light-emitting device.

[0089] Furthermore, semi-transmissive / semi-reflective electrodes are electrodes that transmit visible light (transparent electrodes) and reflective electrodes. It can be made into a laminated structure of (also called) semi-transparent and semi-reflective. In this specification, they are referred to as semi-transparent and semi-reflective, respectively. Reflective electrodes that function as part of the radiating electrodes are referred to as pixel electrodes or common electrodes, and transparent electrodes are referred to as light electrodes. Although sometimes referred to as the optical adjustment layer, the transparent electrode (optical adjustment layer) is also called the pixel electrode or common electrode. It can be said that it has the function of [that].

[0090] The light transmittance of the transparent electrode shall be 40% or more. For example, the light-emitting device shall emit visible light (wavelength It is preferable to use electrodes with a transmittance of 40% or more for light (between 400 nm and less than 750 nm). Furthermore, the reflectance of semi-transmissive and semi-reflective electrodes for visible light should preferably be between 10% and 95%. The reflectance of the reflective electrode shall be between 30% and 80%. The resistivity of these electrodes is preferably 70% to 100%. 0 -2 A value of Ωcm or less is preferred. Furthermore, the display device uses a light-emitting device that emits near-infrared light. In this case, the transmittance of near-infrared light (light with a wavelength of 750 nm to 1300 nm) of these electrodes. Furthermore, it is preferable that the reflectance is also within the above numerical range.

[0091] Buffer layer 192 or buffer layer 194 may also function as an optical adjustment layer. i. By varying the film thickness of buffer layer 192 or buffer layer 194, each light-emitting device In this system, it is possible to intensify and extract light of a specific color. Furthermore, semi-transmissive and semi-reflective electrodes are used. In the case of a laminated structure of reflective electrodes and transparent electrodes, the optical distance between a pair of electrodes is the distance between the pair of reflective electrodes. This indicates the optical distance between poles.

[0092] The light-emitting device 190 has the function of emitting visible light. Specifically, the light-emitting device 190 This is achieved by applying a voltage between the pixel electrode 191 and the common electrode 115, thereby allowing light to be emitted towards the substrate 152. It is an electroluminescent device that emits light (see light emission 21).

[0093] It is preferable that the light-emitting layer 193 is formed so as not to overlap with the light-receiving device 110. This suppresses the absorption of light 22 by the light-emitting layer 193, and allows the light-receiving device 110 to be illuminated. The amount of light emitted can be increased.

[0094] The pixel electrode 181 is connected to the transistor 41 through an opening provided in the insulating layer 214. It is electrically connected to the source or drain.

[0095] The pixel electrode 191 is connected to the transistor 42 through an opening provided in the insulating layer 214. It is electrically connected to the source or drain. Transistor 42 is connected to the light-emitting device 190 It has a function to control the drive.

[0096] Transistors 41 and 42 are in contact with each other on the same layer (substrate 151 in Figure 2). Yes, they are.

[0097] At least a portion of the circuit electrically connected to the light-receiving device 110 is the light-emitting device 190 It is preferable that the electrically connected circuit be formed using the same materials and the same process. This allows for a thinner display device compared to forming the two circuits separately. This allows for the simplification of the manufacturing process.

[0098] The light-receiving device 110 and the light-emitting device 190 are each covered by a protective layer 116. This is preferable. In Figure 2, the protective layer 116 is provided in contact with the common electrode 115. By providing the protective layer 116, water and other substances are prevented from reaching the light receiving device 110 and the light emitting device 190. This suppresses the intrusion of impurities and improves the reliability of the light-receiving device 110 and the light-emitting device 190. This can be improved. Also, the adhesive layer 142 adheres the protective layer 116 and the substrate 152 together. They are combined.

[0099] A light-shielding layer 158 is provided on the surface of substrate 152 that faces substrate 151. The light-shielding layer 158 is It has an aperture at a position that overlaps with the light-emitting device 190 and at a position that overlaps with the light-receiving device 110. In this specification, the position that overlaps with the light-emitting device 190 is specifically the position that overlaps with the light-emitting device 190. This refers to the position that overlaps with the light-emitting region of the optical device 190. Similarly, it refers to the position that overlaps with the light-receiving device 110. Specifically, the position refers to the position that overlaps with the light-receiving area of ​​the light-receiving device 110.

[0100] Here, the light emitted from the light-emitting device 190 is reflected by the object and received by the light-receiving device 110. It detects. However, the light emitted from the light-emitting device 190 is reflected within the display device 10, and the object In some cases, light may enter the light-receiving device 110 without passing through this barrier. The light-shielding layer 158 is for this purpose. The effects of stray light can be suppressed. For example, in cases where the light-shielding layer 158 is not provided. In total, the light 23 emitted by the light-emitting device 190 is reflected by the substrate 152, and the reflected light 24 is received by the light-receiving device The light may enter the vice 110. By providing the light-shielding layer 158, the reflected light 24 is received by the light-shielding layer 158. This suppresses the ingress of light into the vice 110. This reduces noise and improves the reception of the light-receiving device. The sensitivity of sensors using 110 can be increased.

[0101] As the light-shielding layer 158, a material that blocks light emission from the light-emitting device can be used. The layer 158 preferably absorbs visible light. For example, a metal material can be used as the light-shielding layer 158. Alternatively, using resin materials containing pigments (such as carbon black) or dyes, black A matrix can be formed. The light-shielding layer 158 is a red color filter, a green color filter A stacked structure of a color filter and a blue color filter may also be used.

[0102] [Display device 10A] Figure 3A shows a cross-sectional view of the display device 10A. Note that in the following description of the display device, For configurations similar to those of the display device described, explanations may be omitted.

[0103] Display device 10A differs from display device 10 in that it has a resin layer 159.

[0104] The resin layer 159 is provided on the substrate 151 side of the substrate 152. It is provided in a position that overlaps with the optical device 190, and is provided in a position that overlaps with the light receiving device 110. I can't.

[0105] The resin layer 159 is provided, for example, in a position that overlaps with the light-emitting device 190, as shown in Figure 3B. Furthermore, the configuration has an aperture 159p in a position that overlaps with the light receiving device 110. Yes, it is possible. Alternatively, the resin layer 159 may be connected to the light-emitting device 190, for example, as shown in Figure 3C. They are provided in an island-like manner at overlapping positions, and are not provided at positions that overlap with the light receiving device 110. It can be configured as follows.

[0106] A light-shielding layer 158 is applied to the surface of the substrate 152 facing the substrate 151 and to the surface of the resin layer 159 facing the substrate 151. A light-shielding layer 158 is provided at a position that overlaps with the light-emitting device 190, and the light-receiving device It has an opening in a position that overlaps with chair 110.

[0107] For example, the light-shielding layer 158 passes through the resin layer 159 and is reflected from the substrate 151 side surface of the substrate 152. It can absorb stray light 23a. Also, the light-shielding layer 158 absorbs light before it reaches the resin layer 159. Stray light 23b can be absorbed. This allows stray light incident on the light receiving device 110 to be absorbed. It can be reduced. Therefore, noise can be reduced and sensor using the light receiving device 110 This can increase the sensitivity of the light-shielding layer 158, especially when it is close to the light-emitting device 190. It is preferable that the light-shielding layer 158 is located on the light-emitting device 19 When the display is located close to 0, the dependence of the display on the viewing angle can be suppressed, thus improving the display quality. It is also preferable.

[0108] Furthermore, by providing the light-shielding layer 158, the range in which the light-receiving device 110 detects light is controlled. This is possible. If the light-shielding layer 158 is located away from the light-receiving device 110, the imaging range will be This narrows the field of view, allowing for improved image resolution.

[0109] If the resin layer 159 has an opening, the light-shielding layer 158 covers at least a portion of the opening and the surrounding area. It is preferable to cover at least a portion of the side surface of the resin layer 159 that is exposed at the opening.

[0110] When the resin layer 159 is arranged in an island shape, the light-shielding layer 158 is located on a small portion of the side surface of the resin layer 159. It is preferable to cover at least a portion of it.

[0111] Thus, the light-shielding layer 158 is provided in accordance with the shape of the resin layer 159, The distance from to the light-emitting device 190 (specifically, the light-emitting area of ​​the light-emitting device 190) is: From the light-shielding layer 158 to the light-receiving device 110 (specifically, the light-receiving area of ​​the light-receiving device 110) This results in a shorter distance compared to the previous distance. This reduces sensor noise while improving the image resolution. It is possible to increase the display's brightness while suppressing its dependence on the viewing angle. Therefore, in a display device... This allows for improvements in both display quality and imaging quality.

[0112] The resin layer 159 is a layer that transmits light emitted from the light-emitting device 190. The material of the resin layer 159 and For example, acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide Mido resins, siloxane resins, benzocyclobutene resins, phenolic resins, and these resins Examples include lipid precursors. The structure provided between the substrate 152 and the light-shielding layer 158 is The material is not limited to a resin layer; an inorganic insulating film may also be used. The thicker the structure, the better the shielding. A difference arises between the distance from the light layer to the light-receiving device and the distance from the light-shielding layer to the light-emitting device. Because organic insulating films such as resins can be easily formed in thickness, they are suitable for this structure. That is the case.

[0113] The distance from the light-shielding layer 158 to the light-receiving device 110, and the distance from the light-shielding layer 158 to the light-emitting device 19 To compare the distance to 0, for example, the end of the light-shielding layer 158 on the light-receiving device 110 side. The shortest distance L1 from the part to the common electrode 115, and the end of the light-shielding layer 158 on the light-emitting device 190 side. The shortest distance L2 from the part to the common electrode 115 can be used. Compared to the shortest distance L1 In general, the shortest distance L2 is short, which suppresses stray light from the light-emitting device 190 and the light-receiving device The sensitivity of the sensor using S110 can be increased. Furthermore, the display's dependence on the viewing angle can be suppressed. This is possible. Because the shortest distance L1 is longer than the shortest distance L2, the light receiving device 1 The imaging range can be narrowed, and the imaging resolution can be increased.

[0114] Furthermore, in the adhesive layer 142, compared to the portion that overlaps with the light-emitting device 190, the light-receiving device By making the overlapping portion with 110 thicker, the light-shielding layer 158 extends to the light-receiving device 110. To create a difference between the distance at [location] and the distance from the light-shielding layer 158 to the light-emitting device 190. It is possible.

[0115] [Display device 10B] Figure 4A shows a cross-sectional view of the display device 10B.

[0116] The display device 10B does not have a buffer layer 182 and a buffer layer 192, but has a common layer 112. In this respect, it differs from the display device 10A.

[0117] The common layer 112 is located on the partition wall 216, on the pixel electrode 181, and on the pixel electrode 191. The common layer 112 is a layer used in common by the light-receiving device 110 and the light-emitting device 190. The common layer 112 may be a single-layer structure or a laminated structure.

[0118] The common layer 112 can, for example, form one or both of the hole injection layer and the hole transport layer. This is possible. The common layer 112 has functions in the light-emitting device 190 and the light-receiving device 110. The function may differ from that in the case of the common layer 112. For example, when the common layer 112 has a hole injection layer, The hole injection layer functions as a hole injection layer in the light-emitting device 190 and the light-receiving device It functions as a hole transport layer at 110.

[0119] At least a portion of the layers other than the active layer and the light-emitting layer is mutually accessible between the light-receiving device and the light-emitting device. By using a common configuration, the manufacturing process for the display device can be reduced, which is preferable.

[0120] [Display device 10C] Figure 4B shows a cross-sectional view of the display device 10C.

[0121] The display device 10C does not have a buffer layer 184 and a buffer layer 194, but has a common layer 114. In this respect, it differs from the display device 10A.

[0122] The common layer 114 is located on the partition wall 216, the active layer 183, and the light-emitting layer 193. Layer 114 is a layer used in common by the light-receiving device 110 and the light-emitting device 190. The common layer 114 may be a single layer or a multi-layer structure.

[0123] The common layer 114 can, for example, form one or both of the electron injection layer and the electron transport layer. This is possible. The common layer 114 has functions in the light-emitting device 190 and the light-receiving device 110. The function may differ from that in the case of the common layer 114. For example, when the common layer 114 has an electron injection layer, The electron injection layer functions as an electron injection layer in the light-emitting device 190 and the light-receiving device It functions as an electron transport layer at 110.

[0124] At least a portion of the layers other than the active layer and the light-emitting layer is mutually accessible between the light-receiving device and the light-emitting device. By using a common configuration, the manufacturing process for the display device can be reduced, which is preferable.

[0125] [Display device 10D] Figure 5A shows a cross-sectional view of the display device 10D.

[0126] The display device 10D includes buffer layer 182, buffer layer 192, buffer layer 184, and In that it does not have a layer 194, but has a common layer 112 and a common layer 114, the display device 10A and different.

[0127] In the display device of this embodiment, an organic compound is used in the active layer 183 of the light receiving device 110. The light-receiving device 110 has layers other than the active layer 183, and the light-emitting device 190 (EL device ) can have a common configuration. Therefore, in the manufacturing process of the light-emitting device 190, active By simply adding the step of forming layer 183, the light-receiving device 190 is formed in parallel with the light-receiving device A vise 110 can be formed. Also, a light-emitting device 190 and a light-receiving device 110 These can be formed on the same substrate. Therefore, without significantly increasing the manufacturing process. The display device can incorporate a light-receiving device 110.

[0128] In the display device 10D, the active layer 183 of the light receiving device 110 and the light emission of the light emitting device 190 Aside from differentiating between layer 193 and other components, the light-receiving device 110 and the light-emitting device 190 share a common structure. An example of this configuration is shown. However, the configuration of the light receiving device 110 and the light emitting device 190 is not limited to this. Not determined. The light receiving device 110 and the light emitting device 190 have an active layer 183 and a light emitting layer 193 In addition, there may be layers that produce different types of material (as mentioned above, display devices 10A, 10B, (See 10C). The light-receiving device 110 and the light-emitting device 190 use a common layer (common It is preferable to have one or more layers. This allows for a significant increase in the manufacturing process. The display device can incorporate a light-receiving device 110.

[0129] [Display device 10E] Figure 5B shows a cross-sectional view of the display device 10E.

[0130] The display device 10E does not have substrates 151 and 152, but has substrates 153, 154, and adhesive It differs from the display device 10D in that it has layer 155 and an insulating layer 212.

[0131] The substrate 153 and the insulating layer 212 are bonded together by the adhesive layer 155. The protective layer 116 is bonded to the adhesive layer 142.

[0132] The display device 10E includes an insulating layer 212 formed on the fabricated substrate, a transistor 41, and a transistor The starter 42, light receiving device 110, and light emitting device 190, etc., are transferred onto the substrate 153. This configuration is manufactured by the following: Substrate 153 and Substrate 154 each have flexibility. This is preferable. This can increase the flexibility of the display device 10E. For example, It is preferable to use resin for substrates 153 and 154, respectively.

[0133] The substrates 153 and 154 are made of polyethylene terephthalate (PET), respectively. Polyester resins such as polyethylene naphthalate (PEN), polyacrylonitrile resin Fat, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, ara Polyamides, polysiloxane resins, cycloolefin resins, polystyrene resins, polyamides Imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polyp Polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose Nanofibers and the like can be used. On one or both of substrates 153 and 154 Alternatively, glass of a thickness sufficient to be flexible may be used.

[0134] The substrate of the display device in this embodiment may be a film with high optical isotropy. Examples of films with high optical isotropy include triacetylcellulose (TAC, cellulose tri Also referred to as acetate) film, cycloolefin polymer (COP) film, cyclo Examples include olefin copolymer (COC) film, acrylic film, and the like.

[0135] [Display devices 10F, 10G, 10H] Fig. 5C shows a cross-sectional view of the display device 10F. Fig. 6A shows a cross-sectional view of the display device 10G. Fig. 6 B shows a cross-sectional view of the display device 10H.

[0136] The display device 10F has a lens 149 in addition to the configuration of the display device 10D.

[0137] The display device of the present embodiment may have a lens 149. The lens 149 is provided at a position overlapping the light receiving device 110. In the display device 10F, the lens 149 is provided in contact with the substrate 152. The lens 149 included in the display device 10F has a convex surface on the side of the substrate 151. When both the light shielding layer 158 and the lens 149 are formed on the same surface of the substrate 152, the formation order is not limited. In Fig. 5C, an example of forming the lens 149 first is shown, but the light shielding layer 158 may be formed first. In Fig. 5C, the end portion of the lens 149 is covered by the light shielding layer 158.

[0138] not limited. In Fig. 5C, an example of forming the lens 149 first is shown, but the light shielding layer 158 may be formed first. In Fig. 5C, the end portion of the lens 149 is covered by the light shielding layer 158. not limited. In Fig. 5C, an example of forming the lens 149 first is shown, but the light shielding layer 158 may be formed first. In Fig. 5C, the end portion of the lens 149 is covered by the light shielding layer 158. not limited. In Fig. 5C, an example of forming the lens 149 first is shown, but the light shielding layer 158 may be formed first. In Fig. 5C, the end portion of the lens 149 is covered by the light shielding layer 158.

[0139] The display device 10F is configured such that light 22 enters the light receiving device 110 through the lens 149. When having the lens 149, compared with the case of not having the lens 149, the imaging range of the light receiving device 110 can be narrowed, and it is possible to suppress the imaging ranges of adjacent light receiving devices 110 from overlapping. As a result, a clear image with less blurring can be captured. Also, when the imaging ranges of the light receiving devices 110 are the same, when having the lens 149, compared with not having the lens 149 110, the imaging range of the light receiving device 110 can be narrowed, and it is possible to suppress the imaging ranges of adjacent light receiving devices 110 from overlapping. As a result, a clear image with less blurring can be captured. Also, when the imaging ranges of the light receiving devices 110 are the same, when having the lens 149, compared with not having the lens 149 110, the imaging range of the light receiving device 110 can be narrowed, and it is possible to suppress the imaging ranges of adjacent light receiving devices 110 from overlapping. As a result, a clear image with less blurring can be captured. Also, when the imaging ranges of the light receiving devices 110 are the same, when having the lens 149, compared with not having the lens 149 110, the imaging range of the light receiving device 110 can be narrowed, and it is possible to suppress the imaging ranges of adjacent light receiving devices 110 from overlapping. As a result, a clear image with less blurring can be captured. Also, when the imaging ranges of the light receiving devices 110 are the same, when having the lens 149, compared with not having the lens 149 110, the imaging range of the light receiving device 110 can be narrowed, and it is possible to suppress the imaging ranges of adjacent light receiving devices 110 from overlapping. As a result, a clear image with less blurring can be captured. Also, when the imaging ranges of the light receiving devices 110 are the same, when having the lens 149, compared with not having the lens 149 ​Compared to the case without the pinhole (in Figure 5C, the light-shielding layer 1 overlaps with the light-receiving device 110) The aperture size (corresponding to 58) can be increased. Therefore, lens 149 By having this feature, the amount of light incident on the light-receiving device 110 can be increased.

[0140] The display device 10G shown in Figure 6A, like the display device 10F, allows light 22 to pass through the lens 149. This is one configuration in which light is incident on the light receiving device 110.

[0141] In the display device 10G, the lens 149 is provided in contact with the upper surface of the protective layer 116. The lens 149 of the device 10G has a convex surface on the substrate 152 side.

[0142] The display device 10H shown in Figure 6B has a lens array 146 provided on the display surface side of the substrate 152. The lenses of the lens array 146 are positioned to overlap with the light-receiving device 110. It is provided that a light-shielding layer 158 is provided on the surface of substrate 152 that is on the substrate 151 side. It is preferable.

[0143] The method for forming the lens used in the display device of this embodiment is on the substrate or on the light receiving device Microlenses or other lenses may be directly formed on top, or separately manufactured microlenses may be formed on top. Lens arrays, such as lens arrays, may be attached to the substrate.

[0144] The lens preferably has a refractive index of 1.3 to 2.5. The lens is made of an inorganic material. It can be formed using at least one of the following: and organic materials. For example, a resin-containing material. It can be used as a lens. Also, a material containing at least one of an oxide and a sulfide can be used. It can be used in lenses.

[0145] Specifically, resins containing chlorine, bromine, or iodine, resins containing heavy metal atoms, resins containing aromatic rings, resins containing sulfur, etc. can be used for the lens. Alternatively, a material containing nanoparticles of a material having a higher refractive index than the resin can be used for the lens. Titanium oxide or zirconium oxide, etc. can be used for the nanoparticles. In addition, cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, an oxide containing indium and tin, or an oxide containing indium, gallium, and zinc, etc. can be used for the lens. Alternatively, zinc sulfide, etc. can be used for the lens.

[0146] In addition, cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, an oxide containing indium and tin, or an oxide containing indium, gallium, and zinc, etc. can be used for the lens. Alternatively, zinc sulfide, etc. can be used for the lens.

[0147] [Display device 10J] Fig. 6C shows a cross-sectional view of the display device 10J.

[0148] The display device 10J is different from the display device 10D in that it does not have a partition wall 216 that transmits visible light and has a partition wall 217 that blocks visible light.

[0149] The partition wall 217 preferably absorbs the light emitted by the light-emitting device 190. As the partition wall 217, for example, a resin material containing a pigment or a dye, etc. can be used to form a black matrix. Also, by using a brown resist material, the partition wall 217 can be formed of a colored insulating layer.

[0150] In the display device 10D (Fig. 5A), the light emitted by the light-emitting device 190 may be reflected by the substrate 152 and the partition wall 216, and the reflected light may enter the light-receiving device 110. Also, the light emission ​​​​​​​​The light emitted by device 190 passes through the partition 216 and is reflected by the transistor or wiring, etc. As a result, reflected light may enter the light receiving device 110. In the display device 10J, The light is absorbed by the wall 217, and this reflected light is incident on the light-receiving device 110. This can suppress noise and enable sensing using the light receiving device 110. It can increase the sensitivity of the sensor.

[0151] The partition wall 217 preferably absorbs at least the wavelength of light detected by the light-receiving device 110. For example, the light receiving device 110 detects the green light emitted by the light-emitting device 190. In this case, it is preferable that the partition wall 217 absorbs at least green light. For example, partition wall 21 If 7 has a red color filter, it can absorb green light, and the reflected light is received. This can suppress the injection of light into device 110.

[0152] The light-shielding layer 158 can absorb much of the stray light 23b before it reaches the resin layer 159, Some of the stray light 23b may be reflected and incident on the partition wall 217. With a configuration that absorbs stray light, it is possible to suppress the incidence of stray light 23b on transistors or wiring, etc. Therefore, it is possible to suppress stray light 23c from reaching the light receiving device 110. The more times stray light 23b hits the light-shielding layer 158 and the partition wall 217, the more light is absorbed. This can increase the amount of stray light 23c that reaches the light-receiving device 110, making it extremely difficult to obtain. This is possible. If the thickness of the resin layer 159 is thick, stray light 23b will be able to reach the light-shielding layer 158 and the partition wall 217. This is preferable because it increases the number of times you can win.

[0153] Furthermore, because the partition wall 217 absorbs light, light enters the partition wall 217 directly from the light-emitting device 190. The stray light 23d that is emitted can be absorbed by the partition wall 217. This also shows that the partition By providing the wall 217, stray light incident on the light-receiving device 110 can be reduced.

[0154] [Display device 10K] Figure 7A shows a top view of the display device 10K. Figure 7B shows the dashed line A1-A in Figure 7A. Figure 8A shows a cross-sectional view between points A3 and A4 in Figure 7A.

[0155] In Figure 7A, the area enclosed by the dotted line corresponds to one pixel. One pixel is a light-receiving device. Chair 110, red light-emitting device 190R, green light-emitting device 190G, and blue It has a light-emitting device 190B.

[0156] The top surface shape of the light receiving device 110 and the light emitting devices 190R, 190G, and 190B is not particularly limited. It is not determined. The pixel layout shown in Figure 7A uses a hexagonal close-packed grid. By using a close-packed layout, the light-receiving device 110 and the light-emitting device 190R This allows for an increase in the aperture ratio of 190G and 190, which is preferable. In a top view, the light receiving device The light-receiving area of ​​chair 110 is rectangular, and the light-emitting devices 190R, 190G, and 190B emit light. Each of the light regions is hexagonal.

[0157] In a top view (or plan view), the light-receiving device 110 has a frame-shaped light-shielding layer 219a. It is located on the inside. By completely surrounding all four sides of the light-receiving device 110 with the light-shielding layer 219a, This suppresses stray light from entering the light-receiving device 110. Note that the frame-shaped light-shielding layer 219a It may have gaps (which can also be called breaks, interruptions, or missing parts). .

[0158] In a top view, between the green light-emitting device 190G and the blue light-emitting device 190B, Spacer 219b is provided.

[0159] As shown in Figures 7B and 8A, the display device 10K includes a light receiving device 110 and a red light-emitting device. It includes a vice 190R, a green light-emitting device 190G, and a blue light-emitting device 190B. do.

[0160] The light-emitting device 190R consists of a pixel electrode 191R, a common layer 112, a light-emitting layer 193R, and a common layer 1 It has 14 and a common electrode 115. The light-emitting layer 193R is an organic material that emits red light 21R. It contains a compound. The light-emitting device 190R has the function of emitting red light.

[0161] The light-emitting device 190G consists of a pixel electrode 191G, a common layer 112, a light-emitting layer 193G, and a common layer 1 It has 14 and a common electrode 115. The light-emitting layer 193G is an organic material that emits green light 21G. It contains a compound. The light-emitting device 190G has the function of emitting green light.

[0162] The light-emitting device 190B consists of a pixel electrode 191B, a common layer 112, a light-emitting layer 193B, and a common layer 1 It has 14 and a common electrode 115. The light-emitting layer 193B is an organic material that emits blue light 21B. It contains a compound. The light-emitting device 190B has the function of emitting blue light.

[0163] The light-receiving device 110 includes a pixel electrode 181, a common layer 112, an active layer 183, and a common layer 114. and has a common electrode 115. The active layer 183 has an organic compound. Photodetector 11 0 has the function of detecting visible light.

[0164] The display device 10K has a light receiving device 110 between a pair of substrates (substrate 151 and substrate 152). Light-emitting device 190R, light-emitting device 190G, light-emitting device 190B, transistor It includes transistors 41, 42R, 42G, and 42B, etc.

[0165] The ends of the pixel electrodes 181, 191R, 191G, and 191B are separated by partition walls 216. It is covered.

[0166] The pixel electrode 181 is connected to the transistor 41 through an opening provided in the insulating layer 214. It is electrically connected to the source or drain. The pixel electrode 191R is provided in the insulating layer 214. The opening is electrically connected to the source or drain of transistor 42R. Similarly, the pixel electrode 191G is transmitted through an opening in the insulating layer 214. It is electrically connected to the source or drain of the ZISTA 42G. And, pixel electrode 1 91B, through an opening in the insulating layer 214, provides the source of transistor 42B. Alternatively, it is electrically connected to the drain.

[0167] The light receiving device 110 and the light emitting devices 190R, 190G, and 190B are each protected It is covered by layer 116.

[0168] A resin layer 159 is provided on the surface of substrate 152 that faces substrate 151. The resin layer 159 is It is positioned in a location that overlaps with the light-emitting devices 190R, 190G, and 190B, and the light-receiving device 11 It cannot be placed in a position that overlaps with 0.

[0169] A light-shielding layer 158 is applied to the surface of the substrate 152 facing the substrate 151 and to the surface of the resin layer 159 facing the substrate 151. A light-shielding layer 158 is provided for the light-emitting devices 190R, 190G, and 190B. It has an aperture at a position that overlaps with that, and at a position that overlaps with the light receiving device 110.

[0170] In a top view, the partition wall 216 has a frame-shaped opening. In Figure 7B, the partition wall 21 6 has an opening between the light-receiving device 110 and the light-emitting device 190R. A light-shielding layer 219a is provided to cover the mouth. The light-shielding layer 219a is located at the opening of the partition wall 216. It is preferable to cover the mouth and the side surfaces of the partition wall 216 exposed at the opening. The light-shielding layer 219a is Furthermore, it is preferable to cover at least a portion of the upper surface of the partition wall 216.

[0171] It is also possible to configure the partition wall 216 without providing an opening, and instead provide a light-shielding layer 219a on the partition wall 216. However, stray light may pass through the partition 216 and enter the light-receiving device 110. By providing an opening in 216 and providing a light-shielding layer 219a to fill the opening, Stray light that has passed through the partition wall 216 is absorbed by the light-shielding layer 219a at the opening of the partition wall 216. This makes it possible to suppress stray light from entering the light-receiving device 110.

[0172] The light-shielding layer 219a is preferably in a forward tapered shape. This is because the light-shielding layer 219a The film provided therein (common layer 112, common layer 114, common electrode 115, and protective layer 116, etc.) This can improve the coverage of the material.

[0173] The light-shielding layer 219a absorbs at least the wavelength of light detected by the light-receiving device 110. This is preferable. For example, the light receiving device 110 detects the green light emitted by the light-emitting device 190G. If so, it is preferable that the light-shielding layer 219a absorbs at least green light. For example If the light-shielding layer 219a has a red color filter, it can absorb green light. This suppresses the incident of reflected light on the light-receiving device 110. The light-shielding layer 219a also contains pigments. Alternatively, it may be a black matrix formed using a resin material containing dyes, etc. The light layer 219a consists of a red color filter, a green color filter, and a blue color filter. A layered structure of Ruta may also be used. Alternatively, a brown resist material may be used as the light-shielding layer 219a. A colored insulating layer may be formed.

[0174] For example, when the light-receiving device 110 detects the green light emitted by the light-emitting device 190G, The light emitted by the light-emitting device 190G is reflected by the substrate 152 and the partition wall 216, and the reflected light is received Light may be incident on the optical device 110. Also, light emitted by the light-emitting device 190G may hit the partition wall. The light passes through 216 and is reflected by a transistor or wiring, etc., and the reflected light is received by the light receiving device. It may be incident on 110. In the display device 10K, light shielding layer 158 and light shielding layer 219a Therefore, as light is absorbed, such reflected light is incident on the light receiving device 110. This can be suppressed. This reduces noise and improves the sensitivity of the sensor using the light receiving device 110. It can be improved.

[0175] For example, the light-shielding layer 158 can absorb much of the stray light 23b before it reaches the resin layer 159. Furthermore, even if some of the stray light 23b is reflected by the light-shielding layer 158, the light-shielding layer 219a will block the stray light 2 By absorbing 3b, it is possible to suppress stray light 23b from entering transistors or wiring, etc. Therefore, it is possible to suppress stray light from reaching the light receiving device 110. The more times the light hits the light-shielding layer 158 and the light-shielding layer 219a, the more light is absorbed. This makes it possible to drastically reduce the amount of stray light reaching the light-receiving device 110. If the thickness of 159 is greater, the number of times stray light 23b hits the light-shielding layer 158 and the light-shielding layer 219a increases. This is preferable because it allows for the separation of each color from the light-shielding layer 158. The distance to the light-emitting device is shortened, and the display's dependence on the viewing angle is suppressed, thus improving the display quality. It is also desirable from the perspective of improvement.

[0176] Furthermore, because the light-shielding layer 219a absorbs light, light is directly transferred from the light-emitting device to the light-shielding layer 219a. The incident stray light 23d can be absorbed by the light-shielding layer 219a. Furthermore, by providing the light-shielding layer 219a, stray light incident on the light-receiving device 110 is reduced. It is possible.

[0177] Furthermore, by providing the light-shielding layer 158, the range in which the light-receiving device 110 detects light is controlled. This is possible. If the distance from the light-shielding layer 158 to the light-receiving device 110 is long, the imaging range will be narrow. This allows for improved image resolution.

[0178] Spacer 219b is located on partition wall 216 and, in a top view, the light-emitting device 19 It is located between 0G and the light-emitting device 190B. The upper surface of spacer 219b is covered with light-shielding layer 21 It is preferable that the light-shielding layer 158 is closer than the upper surface of 9a. The thickness L3 of the light-shielding layer 219a is If the sum of the thickness of the wall 216 and the thickness of the spacer 219b is L4 or greater, the frame-shaped light-shielding layer 21 The adhesive layer 142 is not sufficiently filled inside 9a, and the light receiving device 110, and furthermore, the display device The reliability of the 10K unit may be reduced. Therefore, the thickness of the bulkhead 216 and the spacer 21 The sum L4 of the thicknesses of 9b is preferably greater than the thickness L3 of the light-shielding layer 219a. This makes it easier to fill the adhesive layer 142. As shown in Figure 8A, spacer 219 In the portion where b and the light-shielding layer 158 overlap, the light-shielding layer 158 is the protective layer 116 (or common electric It may be in contact with pole 115).

[0179] [Display device 10L] Figure 8B shows a cross-sectional view of the display device 10L.

[0180] The display device 10L has light-emitting devices 190R, 190G, and 190B, all having the same light-emitting layer. This is the configuration. Figure 8B corresponds to the cross-sectional view between the dashed line A3 and A4 in Figure 7A.

[0181] The light-emitting device 190G shown in Figure 8B consists of a pixel electrode 191G, an optical adjustment layer 197G, and a common layer. It has 112, an emissive layer 113, a common layer 114, and a common electrode 115. The emissive layer shown in Figure 8B Device 190B consists of a pixel electrode 191B, an optical adjustment layer 197B, a common layer 112, and an emissive layer 1 13. It has a common layer 114 and a common electrode 115. Common layer 112, light-emitting layer 113, The common layer 114 has a common configuration in the light-emitting devices 190R, 190G, and 190B. For example, the light-emitting layer 113 is a light-emitting layer 193R that emits red light, and a light-emitting layer that emits green light. It has a 193G and a light-emitting layer 193B that emits blue light.

[0182] Note that in Figure 8B, the EL layer is shown as a common layer 112, a light-emitting layer 113, and a common layer 114. The light-emitting device has one between the pixel electrode 191 and the common electrode 115 It may be a single structure having a light-emitting unit, or a tandem structure having multiple light-emitting units. It may also have a 'm' structure.

[0183] The light-emitting layer 113 is provided in common to light-emitting devices that emit light of each color. The light emitted by 90G is extracted as green light 21G via the colored layer CFG. The light emitted by device 190B is extracted as blue light 21B via the colored layer CFB. It can be done.

[0184] Light-emitting devices 190G and 190B have optical adjustment layers of different thicknesses. The configuration is identical except for the following: The reflective electrode is used as the pixel electrode 191G and the pixel electrode 191B. This is used. A transparent electrode on the reflective electrode can be used as the optical adjustment layer. Emission of each color The device preferably has optical adjustment layers 197 of different thicknesses. (See Figure 8B) The light-emitting device 190G shown has an optical distance between the pixel electrode 191G and the common electrode 115 that is green. The optical adjustment layer 197G is used to adjust the optical distance to enhance the light. Similarly, the light-emitting device 190B has an optical distance between the pixel electrode 191B and the common electrode 115. The optical adjustment layer 197B is used to adjust the optical distance to enhance the blue light. ru.

[0185] [Display device 10M] Figure 9A shows a top view of the display device 10M. Figure 9B shows the dashed line A5-A in Figure 9A. A cross-sectional view of section 6 is shown.

[0186] The display device 10M shown in Figures 9A and 9B includes a green light-emitting device 190G and a blue light-emitting device The light-shielding layer 219a is provided between the vise 190B and the space 143 is inactive. Figures 7A, 7B, and 8A show that a hollow sealed structure filled with a gas is applied. This is different from the display device 10K shown.

[0187] As in the display device 10M, the light-shielding layer 219a is connected to the light-emitting device 190R and the light-receiving device 11 Even if provided between 0 and both between light-emitting device 190G and light-emitting device 190B good.

[0188] [Display device 10N] Figure 10A shows a top view of the display device 10N. Figure 10B shows the dashed line A in Figure 10A. A cross-sectional view between 7-A8 is shown. Figure 11A shows the cross-section between the dashed line A9-A10 in Figure 10A. A view drawing is shown.

[0189] The cross-sectional structure between the dashed line A3-A4 in the display device 10N (Figure 10A) is as follows: A configuration similar to that of K (Figure 8A) can be applied. Alternatively, a configuration similar to that of the display device 10M (Figure 9B) can be applied. You may apply the formula.

[0190] The display device 10N has a top surface shape and cross-sectional shape of the light-shielding layer 219a, which is the same as the display device 10K (Figure 7A This differs from Figure 7B).

[0191] In a top view (or plan view), the light-shielding layer 219a covers all four sides of the light-receiving device 110. It is an enclosure, and one end and the other end are separated from each other. The gap 220 of the light-shielding layer 219a ( The gap, interrupted part, or missing part is the red light-emitting device 190 It is located on the R side. Here, the light source used for sensing is only a light-emitting device of a specific color. In this case, a light-shielding layer 21 is applied to the light-emitting device that is different from the light-emitting device used for sensing. It is preferable that the gap 220 between 9a is located. For example, in the case of the display device 10N, the green The sensing is performed using either the light-emitting device 190G or the blue light-emitting device 190B. This is preferable. This makes it possible to suppress the effects of noise during sensing. When sensing is performed using the green light-emitting device 190G, as shown in region 230. One end of the light-shielding layer 219a is different from the red light-emitting device 190G. It is preferable that it protrudes towards the 190R side. This allows the green light-emitting device 190G to This prevents stray light from entering the light-receiving device 110 through the gap 220.

[0192] The partition wall 216 has an opening between the light-receiving device 110 and the light-emitting device 190R. A light-shielding layer 219a is provided to cover the opening. The light-shielding layer 219a is located in the partition wall 2 It is preferable to cover the 16 openings and the sides of the partition wall 216 exposed at the openings. Preferably, 19a further covers at least a portion of the upper surface of the partition wall 216.

[0193] The light-shielding layer 219a may have an inverse tapered shape. The thickness of the organic film and common electrode 115 is reduced near the side surface of the light-shielding layer 219a. There is also a possibility of a void 160 forming near the side surface of the light-shielding layer 219a.

[0194] Here, in a top view, the light-shielding layer 219a completely surrounds all four sides of the light-receiving device 110. As a result, the common electrode 115 is stepped off by the light-shielding layer 219a, and the inside and outside of the light-shielding layer 219a There is a risk that the common electrode 115 may separate from the side. Therefore, the upper surface of the light-shielding layer 219a The structure is such that it surrounds all four sides of the light receiving device 110, and one end is separated from the other, with a gap By providing 220, the separation of the common electrode 115 can be suppressed. This allows the display Display malfunctions in device 10N can be suppressed.

[0195] Figure 11A is a cross-sectional view including the gap 220 between the light-shielding layers 219a. In a top view, partition wall 2 16 surrounds the four sides of the light-receiving device 110, similar to the upper surface shape of the light-shielding layer 219a, and An opening is provided in which one end and the other end are separated from each other. Gap 2 in the light-shielding layer 219a In 20, a common layer 112, a common layer 114, a common electrode 115, and a protective layer are placed on the partition wall 216. The numbers 116 are arranged in order.

[0196] [Display device 10P] Figure 11B shows a cross-sectional view of the display device 10P.

[0197] The display device 10P has a side wall 219c that is in contact with the side surface of the light-shielding layer 219a, It is different from 10N.

[0198] In the display device 10P, the upper surface shape of the light-shielding layer 219a is frame-shaped, as shown in Figure 7A. Alternatively, as shown in Figure 10A, there may be a gap 220.

[0199] By providing a side wall 219c that is in contact with the side surface of the reverse tapered light-shielding layer 219a, the organic film and This improves the coating properties of common electrodes 115, etc., and enhances the display quality of the display device. Yes, it is possible. By improving the coverage of the common electrode 115, the stepped breakage of the common electrode 115 can be reduced, and furthermore, the thickness can be reduced. Because film formation can be suppressed, brightness unevenness in the display caused by voltage drop across the common electrode 115 is suppressed. It is possible.

[0200] The side wall 219c can be formed using a material that can be used for the partition wall 216.

[0201] [Display device 10Q] Figures 12A and 12B show cross-sectional views of the display device 10Q. The display device 10Q is a display device A top surface structure similar to that of 10K (Figure 7A) can be applied. Figure 12A shows the same top surface structure as in Figure 7A. Figure 12B shows a cross-sectional view between the dashed line A1 and A2 in Figure 7A. A cross-sectional view of section 4 is shown.

[0202] Display device 10Q does not have partition wall 216, but has partition wall 217, and is therefore different from display device 10K in that respect. They are different.

[0203] The light-shielding layer 219a is located on the partition wall 217. Unlike partition wall 216, partition wall 217 is Since it can absorb the light emitted by the optical device, there is no need to provide an opening in the partition wall 217. Stray light 23d that enters the partition wall 217 from the light-emitting device is absorbed by the partition wall 217. Stray light 23d incident on the light-shielding layer 219a from the optical device is absorbed by the light-shielding layer 219a. .

[0204] Spacer 219b is located between light-emitting device 190G and light-emitting device 190B. The upper surface of spacer 219b is preferably closer to the light-shielding layer 158 than the upper surface of light-shielding layer 219a. If the thickness of the spacer 219b is thinner than the thickness of the light-shielding layer 219a, the frame-shaped light-shielding layer 21 The adhesive layer 142 is not sufficiently filled inside 9a, and the light receiving device 110, and furthermore, the display device The reliability of the 10Q may be reduced. Therefore, the spacer 219b is placed on the light-shielding layer 21 It is preferable that it be thicker than 9a. This makes it easier to fill the adhesive layer 142. As shown in Figure 12B, in the portion where the spacer 219b and the light-shielding layer 158 overlap, The optical layer 158 may be in contact with the protective layer 116 (or common electrode 115).

[0205] In the following section, using Figures 13 to 17, we will describe in more detail the configuration of a display device according to one embodiment of the present invention. I will explain.

[0206] [Display device 100A] Figure 13 shows a perspective view of the display device 100A, and Figure 14 shows a cross-sectional view of the display device 100A. vinegar.

[0207] The display device 100A has a configuration in which substrate 152 and substrate 151 are bonded together. Figure 13 In this example, circuit board 152 is clearly indicated by a dashed line.

[0208] The display device 100A includes a display unit 162, a circuit 164, wiring 165, etc. Figure 13 shows the table. This shows an example in which IC (integrated circuit) 173 and FPC 172 are mounted on the display device 100A. Therefore, the configuration shown in Figure 13 has a display device 100A, an IC, and an FPC. It can also be called a display module.

[0209] For example, a scan line drive circuit can be used as circuit 164.

[0210] The wiring 165 has the function of supplying signals and power to the display unit 162 and the circuit 164. The signal and power are supplied externally via FPC172 or from IC173 to wiring 165. It will be entered.

[0211] Figure 13 shows the COG (Chip On Glass) method or COF (Chip On Glass) method. An example is shown in which IC173 is provided on substrate 151 using a film method, etc. 73 can be used to apply an IC having, for example, a scan line drive circuit or a signal line drive circuit. The display device 100A and the display module may be configured without an IC. The IC may be mounted on the FPC using a COF (Cross-of-Fiber) method or similar.

[0212] Figure 14 shows a portion of the area of ​​the display device 100A including the FPC 172, a portion of the circuit 164, and a table. An example of a cross-section obtained by cutting a part of the indicated portion 162 and a part of the region including the end portion. show.

[0213] The display device 100A shown in Figure 14 has a transistor 201 between substrate 151 and substrate 152. , transistor 205, transistor 206, light-emitting device 190, light-receiving device 110 It has the following characteristics.

[0214] The resin layer 159 and the insulating layer 214 are bonded together via the adhesive layer 142. Light-emitting device 19 For sealing the 0 and the light receiving device 110, a solid sealing structure or a hollow sealing structure can be applied. In Figure 14, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the substrate 151 is It is filled with an inert gas (such as nitrogen or argon) and employs a hollow sealing structure. Even if the adhesive layer 142 is provided in superimposed on the light-emitting device 190 and the light-receiving device 110 Good. Also, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the substrate 151 is bonded. The layer 142 may be filled with a different resin.

[0215] The light-emitting device 190 consists of a pixel electrode 191, a common layer 112, and a light-emitting layer 19, from the insulating layer 214 side. 3. It has a stacked structure in which a common layer 114 and a common electrode 115 are stacked in that order. Pixel electrode 1 91, through an opening in the insulating layer 214, passes through the conductive layer 2 of the transistor 206. It is connected to 22b.

[0216] The ends of the pixel electrode 191 are covered by a partition wall 217. The pixel electrode 191 receives visible light. The common electrode 115 contains a material that transmits visible light, and the reflective material is included.

[0217] The light-receiving device 110 consists of a pixel electrode 181, a common layer 112, and an active layer 18 from the insulating layer 214 side. 3. It has a stacked structure in which a common layer 114 and a common electrode 115 are stacked in that order. Pixel electrode 1 81, through an opening in the insulating layer 214, passes through the conductive layer 2 of the transistor 205. It is electrically connected to 22b. The end of the pixel electrode 181 is covered by the partition wall 217. The pixel electrode 181 contains a material that reflects visible light, and the common electrode 115 transmits visible light. It includes the materials used.

[0218] The light emitted by the light-emitting device 190 is emitted towards the substrate 152. Light is incident on the substrate 152 and space 143. It is preferable to use a material with high permeability to the opposite.

[0219] Pixel electrodes 181 and 191 can be manufactured using the same material and the same process. The common layer 112, common layer 114, and common electrode 115 connect to the light receiving device 110 and the light emitting device. It is used in both the chair 190 and the light-receiving device 110 and the light-emitting device 190. Except for the difference in the configuration of layer 183 and the light-emitting layer 193, all other configurations can be the same. This allows the light receiving device 110 to be incorporated into the display device 100A without significantly increasing the manufacturing process. It can be stored.

[0220] A resin layer 159 and a light-shielding layer 158 are provided on the surface of the substrate 152 that faces the substrate 151. The resin layer 159 is positioned to overlap with the light-emitting device 190 and overlap with the light-receiving device 110. It cannot be provided in the following position. The light-shielding layer 158 is on the substrate 151 side surface of the substrate 152, resin layer 1 It is provided covering the side of 59 and the surface of the resin layer 159 on the substrate 151 side. The light-shielding layer 158 is It has openings at positions that overlap with the light-receiving device 110 and at positions that overlap with the light-emitting device 190. By providing the light-shielding layer 158, the range in which the light-receiving device 110 detects light can be controlled. This is possible. In addition, by having a light-shielding layer 158, the light-emitting device 190 can be used without going through the object. This suppresses direct light incidence on the light receiving device 110. Therefore, noise is reduced. A highly sensitive sensor can be realized without the presence of a resin layer 159. The distance from 8 to the light-emitting device 190, and the distance from the light-shielding layer 158 to the light-receiving device 110 This allows for a shorter distance compared to the original distance. This reduces sensor noise while improving the display's visual clarity. This suppresses field-angle dependence. Therefore, it improves both display quality and imaging quality. It is possible.

[0221] The configuration of the partition wall 217 and the light-shielding layer 219a in the display device 100A is as shown in the display device 10Q (Figure It is the same as 12A).

[0222] The partition wall 217 covers the ends of the pixel electrode 181 and the ends of the pixel electrode 191. A light-shielding layer 219a is provided on 7. The light-shielding layer 219a is provided on the light-receiving device 110 and It is located between the light-emitting device 190 and the partition wall 217 and the light-shielding layer 219a. It is preferable that the light receiving device 110 absorbs the wavelength of light it detects. This can suppress stray light incident on the image.

[0223] Transistors 201, 205, and 206 are all located on substrate 1. They are formed on 51. These transistors are made using the same materials and the same process. It can be manufactured.

[0224] On the substrate 151, there are insulating layers 211, 213, 215, and 214. They are arranged in the following order. A portion of the insulating layer 211 serves as the gate insulating layer for each transistor. It functions as follows: The insulating layer 213, a portion of which functions as the gate insulating layer for each transistor. The insulating layer 215 is provided covering the transistor. The insulating layer 214 is provided covering the transistor. It is provided as a covering and has the function of a planarization layer. Note that the number of gate insulating layers and transient The number of insulating layers covering the sta is not limited; each layer may be a single layer or two or more layers.

[0225] At least one layer of the insulating layer covering the transistor is made of a material that does not easily diffuse impurities such as water and hydrogen. It is preferable to use a material. This allows the insulating layer to function as a barrier layer. This configuration effectively prevents impurities from diffusing into the transistor from the outside. This allows for effective suppression and improves the reliability of the display device.

[0226] Insulating layers 211, 213, and 215 are each made of inorganic insulating films. It is preferable to do so. Examples of inorganic insulating films include silicon nitride films and silicon oxide nitride films. silicon oxide film, silicon nitride film, aluminum oxide film, aluminum nitride film, etc. It can also be used. In addition, hafnium oxide film, yttrium oxide film, zirconium oxide Calcium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cereal oxide film A lium film and a neodymium oxide film may also be used. In addition, two or more of the above insulating films may be laminated. You may use it.

[0227] Here, organic insulating films often have lower barrier properties compared to inorganic insulating films. Therefore, organic The insulating film preferably has an opening near the edge of the display device 100A. This allows the display to be displayed. This prevents impurities from entering through the organic insulating film from the end of the device 100A. Alternatively, the edge of the organic insulating film can be positioned inward from the edge of the display device 100A. An insulating film may be formed so that the organic insulating film is not exposed at the edges of the display device 100A.

[0228] An organic insulating film is preferred for the insulating layer 214, which functions as a planarizing layer. Materials that can be used include acrylic resin, polyimide resin, epoxy resin, and polyam resins, polyimideamide resins, siloxane resins, benzocyclobutene resins, phenol Examples include resins and precursors of these resins.

[0229] In the region 228 shown in Figure 14, an opening is formed in the insulating layer 214. This provides insulation Even when an organic insulating film is used for layer 214, the display unit 1 can be accessed from the outside via the insulating layer 214. This prevents impurities from entering 62. Therefore, the reliability of the display device 100A is improved. It is possible to do so.

[0230] Transistors 201, 205, and 206 are used as gates. A conductive layer 221 that can perform functions, an insulating layer 211 that functions as a gate insulating layer, and a source and drain. Conductive layers 222a and 222b, semiconductor layer 231, and gate insulating layer function as conductive layers 222a and 222b, semiconductor layer 231, and gate insulating layer. It has a functional insulating layer 213 and a conductive layer 223 that functions as a gate. Multiple layers obtained by processing the same conductive film are given the same hatching pattern. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is conductive It is located between the electrolytic layer 223 and the semiconductor layer 231.

[0231] The structure of the transistors in the display device of this embodiment is not particularly limited. For example, Uses na-type transistors, staggered transistors, inverse staggered transistors, etc. It is possible to do this. Also, either top-gate or bottom-gate transistor structure Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed. That's good too.

[0232] Transistors 201, 205, and 206 have channels. A configuration is applied in which the semiconductor layer to be formed is sandwiched between two gates. The two gates are connected. The transistors may be driven by supplying the same signal to these. Alternatively, Of the two gates, one is given a potential to control the threshold voltage, and the other is for driving The threshold voltage of the transistor may be controlled by applying an electric potential.

[0233] The crystallinity of semiconductor materials used in transistors is not particularly limited; amorphous semiconductors, Semiconductors with crystalline properties (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or those with a crystalline region in part) Any semiconductor (having a region) may be used. If a semiconductor with crystalline properties is used, This is preferable because it suppresses the degradation of the DISTA characteristics.

[0234] The semiconductor layer of a transistor preferably contains a metal oxide (also called an oxide semiconductor). i. Alternatively, the semiconductor layer of the transistor may have silicon. This includes amorphous silicon and crystalline silicon (low-temperature polysilicon, single-crystal silicon, etc.). ) are some examples.

[0235] The semiconductor layer is, for example, made of indium and M (where M is gallium, aluminum, silicon, and chlorine). Calcium, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, gel Manium, Zirconium, Molybdenum, Lanthanum, Cerium, Neodymium, Hafnium, Ta (One or more selected from tungsten, magnesium, and zinc) It is preferable that it has the following. In particular, M is aluminum, gallium, yttrium, and s It is preferable that it be one or more types selected from the group.

[0236] In particular, the semiconductor layer contains indium (In), gallium (Ga), and zinc (Zn). It is preferable to use an oxide (also written as IGZO).

[0237] If the semiconductor layer is an In-M-Zn oxide, then the atoms of In in the In-M-Zn oxide... The numerical ratio is preferably greater than or equal to the atomic ratio of M. As for the atomic ratio of elements, In:M:Zn = 1:1:1 or close to it, In:M: Zn=1:1:1.2 or near that composition, In:M:Zn=2:1:3 or near that composition Nearby compositions: In:M:Zn=3:1:2 or compositions in the vicinity: In:M:Zn=4:2 :3 or a composition in its vicinity, In:M:Zn=4:2:4.1 or a composition in its vicinity, I n:M:Zn=5:1:3 or a similar composition, In:M:Zn=5:1:6 or something else Compositions in the vicinity of In:M:Zn=5:1:7 or in the vicinity of In:M:Zn=5 :1:8 or a composition close to it, In:M:Zn=6:1:6 or a composition close to it, I Examples include compositions such as n:M:Zn=5:2:5 or nearby compositions. This includes a range of ±30% of the desired atomic ratio.

[0238] For example, when describing the composition as having an atomic ratio of In:Ga:Zn = 4:2:3 or close to it. When the atomic ratio of In is 4, the atomic ratio of Ga is between 1 and 3, and the atomic number of Zn This includes cases where the ratio is between 2 and 4. Also, the atomic ratio is In:Ga:Zn = 5:1:6. When describing the composition in its vicinity, if the atomic ratio of In is set to 5, then the atomic ratio of Ga This includes cases where the value is greater than 0.1 and less than or equal to 2, and the atomic ratio of Zn is between 5 and 7. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn = 1:1:1 or close to it, When the atomic ratio of n is set to 1, the atomic ratio of Ga is greater than 0.1 and less than or equal to 2, and Zn This includes cases where the atomic ratio is greater than 0.1 and less than or equal to 2.

[0239] The transistors in circuit 164 and the transistors in display unit 162 have the same structure. It may be present, or it may have a different structure. The structure of the multiple transistors in circuit 164 The construction may be the same for all, or there may be two or more types. Similarly, the display unit 162 has The structures of the multiple transistors may all be the same, or there may be two or more different structures.

[0240] A connection portion 204 is provided in the area of ​​substrate 151 where substrate 152 does not overlap. In section 204, the wiring 165 is electrically connected to the FPC 172 via the conductive layer 166 and the connecting layer 242. They are precisely connected. The upper surface of the connection part 204 is processed with the same conductive film as the pixel electrode 181. The resulting conductive layer 166 is exposed. This connects the connection part 204 and the FPC 172. It can be electrically connected via the subsequent layer 242.

[0241] Various optical components can be placed on the outside of the substrate 152. Examples of optical components include polarizing plates. Examples include phase difference plates, light diffusion layers (such as diffusion films), anti-reflective layers, and light-gathering films. Furthermore, the outside of the substrate 152 has an antistatic film to suppress the adhesion of dust, and a coating to prevent dirt from adhering. It features a water-repellent coating to prevent scratches during use, a hard coat coating to suppress scratches, and an impact-absorbing layer. You may place it there.

[0242] Substrates 151 and 152 are made of glass, quartz, ceramic, sapphire, and resin, respectively. Oils and other substances can be used. Flexible materials are used for substrates 151 and 152. This increases the flexibility of the display device.

[0243] The adhesive layer can be a photocuring adhesive such as an ultraviolet-curing type, a reaction-curing adhesive, or a thermosetting adhesive. Various types of curing adhesives, such as anaerobic adhesives, can be used. Poxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide Resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, EV Examples include A (ethylene vinyl acetate) resin. In particular, epoxy resins have high moisture permeability. Low-cost materials are preferred. A two-part resin mixture may also be used. Furthermore, adhesive sheets, etc., may be used. It's okay to be there.

[0244] The connecting layer 242 is an anisotropic conductive film (ACF). (ductive film), anisotropic conductive paste (ACP: Anisotropic You can use methods such as Conductive Paste.

[0245] The light-emitting device 190 is a top-emission type, bottom-emission type, dual-emission type. There are various types, such as the ion type. A conductive film that transmits visible light is used for the electrode that extracts the light. Furthermore, it is preferable to use a conductive film that reflects visible light on the electrode that does not extract light.

[0246] The light-emitting device 190 has at least a light-emitting layer 193. Other layers besides 193 include materials with high hole injection potential, materials with high hole transport potential, and hole block materials. Materials, substances with high electron transport properties, substances with high electron injection properties, or bipolar substances (electron transport It may further have layers containing substances with high transportability and hole transportability. For example, a common layer. 112 preferably has one or both of a hole injection layer and a hole transport layer. For example, The common layer 114 preferably has one or both of the electron transport layer and the electron injection layer.

[0247] The hole injection layer is a layer that injects holes from the anode into the hole transport layer, and materials with high hole injection capabilities are used. It is a layer containing. Materials with high hole injection properties include aromatic amine compounds and hole transport materials. A composite material containing an acceptor material (electron-accepting material) can be used.

[0248] In a light-emitting device, the hole transport layer receives holes injected from the anode by the hole injection layer. This is the layer that transports to the light-emitting layer. In a photodetector, the hole transport layer is the layer that transports incident material in the active layer. This layer transports holes generated based on the light to the anode. The hole transport layer is made of a hole transport material. It is a layer containing . As a hole transport material, 10 -6 cm 2 Having a hole mobility of / Vs or higher A substance that does the above is preferred. Furthermore, any substance that has higher hole transport than electron transport is also acceptable. Other materials can also be used. As hole transport materials, π-electron-rich heteroaromatic compounds ( For example, carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines (aro Materials with high hole transport properties, such as compounds having a fragrance amine skeleton, are preferred.

[0249] In a light-emitting device, the electron transport layer receives electrons injected from the cathode by the electron injection layer. This is the layer that transports electrons to the light-emitting layer. In a light-receiving device, the electron transport layer is the layer that receives electrons in the active layer. This layer transports electrons generated based on the light to the cathode. The electron transport layer is made of an electron transport material. This is a layer containing [a certain material]. As an electron transport material, it is 1 × 10 -6 cm 2 Electron mobility greater than / Vs A material having these properties is preferred. Furthermore, any material with higher electron transport properties than holes is also acceptable. Other materials can also be used. As an electron transport material, a metal complex having a quinoline skeleton is used. Body, metal complex having a benzoquinoline skeleton, metal complex having an oxazole skeleton, thiazo In addition to metal complexes having a metal skeleton, oxadiazole derivatives, triazole derivatives, and imi Dazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, Quinoline derivatives having a noline ligand, benzoquinoline derivatives, quinoxaline derivatives, di Benzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and Other highly electron-transporting compounds include nitrogen-containing heteroaromatic compounds and π-electron-deficient heteroaromatic compounds. Materials can be used.

[0250] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is made of a material with high electron injection properties. It is a layer containing electrons. Materials with high electron injection include alkali metals, alkaline earth metals, and These compounds can be used. Materials with high electron injection properties include electron transport materials. Composite materials containing both a material and a donor material (electron-donating material) can also be used.

[0251] The common layer 112, the light-emitting layer 193, and the common layer 114 contain low molecular weight compounds and high molecular weight compounds. Either of these can be used, and may contain inorganic compounds. Common layer 112, light-emitting layer 1 Layers 93 and the common layer 114 are each created by a vapor deposition method (including vacuum deposition) and a transfer method, respectively. It can be formed by methods such as printing, inkjet printing, coating, etc.

[0252] The light-emitting layer 193 is a layer containing light-emitting material. The light-emitting layer 193 contains one or more types of light-emitting materials. It can possess qualities. Examples of luminescent materials include blue, purple, bluish-purple, green, yellowish-green, and yellow. Substances that emit light in colors such as orange and red are used as appropriate. In addition, near-infrared light is used as the light-emitting material. It is also possible to use substances that emit a certain emission.

[0253] The active layer 183 of the light-receiving device 110 includes a semiconductor. This semiconductor is silicon. Examples include inorganic semiconductors and organic semiconductors containing organic compounds. In this embodiment, This section shows an example of using an organic semiconductor as the semiconductor in the active layer. The light-emitting layer 193 of the light-emitting device 190 and the active layer 183 of the light-receiving device 110 are the same It can be formed by a method (e.g., vacuum deposition), and is preferable because it allows for the commonization of manufacturing equipment. stomach.

[0254] The n-type semiconductor material of the active layer 183 is fullerene (for example, C 60 , C 70 etc. Examples include electron-accepting organic semiconductor materials such as ) or derivatives thereof. Also, the active layer 183 As a material for p-type semiconductors possessed by [the entity], copper(II) phthalocyanine (Copper(II) phthalocyanine (CuPc) and tetraphenyldibenzoperifuranthene (Tetraphenyldibenzoperiflanthene; DBP), zinc Electron-donating properties of phthalocyanines (zinc phosphate; ZnPc), etc. Examples of organic semiconductor materials include tin phthalocyanine. You may also use SnPc.

[0255] For example, the active layer 183 is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor. .

[0256] In addition to the gate, source, and drain of a transistor, various wirings and electrical components that make up the display device. Materials that can be used for conductive layers such as electrodes include aluminum, titanium, chromium, and nickel. Copper, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten Examples include metals such as tungsten, and alloys in which such metals are the main component. The film containing the material can be used as a single layer or as a multilayer structure.

[0257] Furthermore, examples of conductive materials that are translucent include indium oxide, indium tin oxide, and indium Conductive oxides or graphite such as zinc oxide, zinc oxide, and zinc oxide containing gallium You can use gold, silver, platinum, magnesium, nickel, or tungsten. Metal materials such as chromium, molybdenum, iron, cobalt, copper, palladium, and titanium Alternatively, an alloy material containing the metal material can be used. Or, a nitride of the metal material (for example) For example, titanium nitride may be used. When using the above material, it is preferable to make it thin enough to be translucent. A laminated film of silver and magnesium can be used as a conductive layer. For example, an alloy of silver and magnesium and an index Using a multilayer film of um-tin oxide is preferable because it can improve conductivity. These include conductive layers such as various wirings and electrodes that constitute the display device, and conductive materials that the display device possesses. It can also be used as an electrochemical layer (a conductive layer that functions as a pixel electrode or common electrode).

[0258] Examples of insulating materials that can be used for each insulating layer include acrylic resin and epoxy resin. resins such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide Examples include inorganic insulating materials such as aluminum.

[0259] [Display device 100B] Figure 15A shows a cross-sectional view of the display device 100B.

[0260] The display device 100B has a protective layer 116 and a solid sealing structure is applied to it. It differs primarily from the display device 100A.

[0261] By providing a protective layer 116 that covers the light receiving device 110 and the light emitting device 190, the light receiving device This suppresses the entry of impurities such as water into the vice 110 and the light-emitting device 190, and the light-receiving device This can improve the reliability of the vice 110 and the light-emitting device 190.

[0262] In the region 228 near the end of the display device 100B, through the opening of the insulating layer 214, It is preferable that layer 215 and protective layer 116 are in contact with each other. In particular, the insulating layer 215 has It is preferable that the inorganic insulating film and the inorganic insulating film of the protective layer 116 are in contact with each other. This further suppresses the entry of impurities into the display unit 162 from the outside via the organic insulating film. This is possible. Therefore, the reliability of the display device 100B can be improved.

[0263] Figure 15B shows an example where the protective layer 116 has a three-layer structure. In Figure 15B, protective layer 116 This consists of an inorganic insulating layer 116a on the common electrode 115 and an organic insulating layer 11 on the inorganic insulating layer 116a. It has 6b and an inorganic insulating layer 116c on the organic insulating layer 116b.

[0264] The edges of the inorganic insulating layer 116a and the edges of the inorganic insulating layer 116c are connected to the edges of the organic insulating layer 116b. It extends outward and is in contact with each other. And the inorganic insulating layer 116a is insulating layer 214( The insulating layer (organic insulating layer) comes into contact with the insulating layer 215 (inorganic insulating layer) through an opening in the organic insulating layer. This provides insulation. The light-receiving device 110 and the light-emitting device 190 are surrounded by layer 215 and protective layer 116. Therefore, the reliability of the light-receiving device 110 and the light-emitting device 190 can be improved. .

[0265] Thus, the protective layer 116 may have a laminated structure of an organic insulating film and an inorganic insulating film. In this case, it is preferable that the edge of the inorganic insulating film extends outward more than the edge of the organic insulating film.

[0266] In addition, in the display device 100B, the protective layer 116 and the substrate 152 are bonded together by the adhesive layer 142. They are joined together. The adhesive layer 142 is attached to the light receiving device 110 and the light emitting device 190 respectively These are stacked and the display device 100B is fitted with a solid encapsulation structure.

[0267] [Display device 100C] Figures 16 and 17A show cross-sectional views of the display device 100C. A perspective view of the display device 100C is shown below. This is the same as display device 100A (Figure 13). Figure 16 shows the FPC1 of display device 100C. A portion of the area including 72, a portion of circuit 164, and a portion of display unit 162 are cut off. An example of a cross-section at that time is shown. Figure 17A shows a part of the display unit 162 of the display device 100C. An example of a cross-section when cut is shown. In Figure 16, in particular, the light receiving device of the display unit 162 A cross-section of the region containing S110 and the red light-emitting device 190R. An example is shown. In Figure 17A, among the display unit 162, in particular, the light-emitting device 1 that emits green light is shown. An example of a cross-section when a region containing 90G and the blue light-emitting device 190B is cut. This indicates.

[0268] The display device 100C shown in Figures 16 and 17A has a transistor between substrate 153 and substrate 154. Transistor 203, Transistor 207, Transistor 208, Transistor 209, Transistor Zista 210, Light-emitting device 190R, Light-emitting device 190G, Light-emitting device 190B, It also includes a light receiving device 110, etc.

[0269] The resin layer 159 and the common electrode 115 are bonded together via the adhesive layer 142, and the display device 10 A solid encapsulation structure is applied to 0C.

[0270] The substrate 153 and the insulating layer 212 are bonded together by the adhesive layer 155. The insulating layer 157 is bonded to the adhesive layer 156.

[0271] The method for fabricating the display device 100C involves first creating an insulating layer 212, each transistor, and a light-receiving device. Chair 110, a first fabricated substrate on which various light-emitting devices are provided, an insulating layer 157, a resin layer 1 59, and the second fabricated substrate having a light-shielding layer 158, etc., are bonded together by the adhesive layer 142. Combine them. Then, peel off the first fabricated substrate and attach substrate 153 to the exposed surface, and the second fabrication By peeling off the substrate and attaching substrate 154 to the exposed surface, the first fabricated substrate and the second fabricated substrate Each component formed on the board is transferred to substrate 153 and substrate 154. Each of the plates 154 preferably has flexibility. This allows the display device 100C This can increase its flexibility.

[0272] Insulating layer 212 and insulating layer 157 are, respectively, insulating layer 211, insulating layer 213, and insulating layer 157. An inorganic insulating film can be used for layer 215.

[0273] The light-emitting device 190R consists of a pixel electrode 191R, a common layer 112, and light-emitting elements, starting from the insulating layer 214b side. It has a laminated structure in which layer 193R, common layer 114, and common electrode 115 are stacked in that order. The base electrode 191R is connected to the conductive layer 169R through an opening provided in the insulating layer 214b. The conductive layer 169R is connected to the transistor through an opening provided in the insulating layer 214a. It is connected to the conductive layer 222b of 208. The conductive layer 222b is provided on the insulating layer 215. It is connected to the low-resistance region 231n through the cut-out aperture. In other words, the pixel electrode 191R is It is electrically connected to transistor 208. Transistor 208 is a light-emitting device. It has the function of controlling the drive of the 190R.

[0274] Similarly, the light-emitting device 190G has a pixel electrode 191G and a common layer 11 from the insulating layer 214b side. 2. It has a laminated structure in which the light-emitting layer 193G, the common layer 114, and the common electrode 115 are stacked in that order. The pixel electrode 191G connects to the conductive layer 169G and the conductive layer 222b of the transistor 209. Through this, it is electrically connected to the low-resistance region 231n of transistor 209. In other words, the pixel Electrode 191G is electrically connected to transistor 209. Transistor 209 is It has the function of controlling the drive of the light-emitting device 190G.

[0275] Then, the light-emitting device 190B has a pixel electrode 191B and a common layer 11 from the insulating layer 214b side. 2. It has a laminated structure in which the light-emitting layer 193B, the common layer 114, and the common electrode 115 are stacked in that order. The pixel electrode 191B connects to the conductive layer 169B and the conductive layer 222b of the transistor 210. Through this, it is electrically connected to the low-resistance region 231n of transistor 210. In other words, the pixel Electrode 191B is electrically connected to transistor 210. Transistor 210 is It has the function of controlling the drive of the light-emitting device 190B.

[0276] The light-receiving device 110 consists of a pixel electrode 181, a common layer 112, and an active layer 1, from the insulating layer 214b side. It has a stacked structure in which 83, a common layer 114, and a common electrode 115 are stacked in that order. Pixel electrode 181 is transmitted through the conductive layer 168 and the conductive layer 222b of the transistor 207 It is electrically connected to the low-resistance region 231n of 207. In other words, the pixel electrode 181 is connected to the tra It is electrically connected to the 207 radiator.

[0277] The ends of the pixel electrodes 181, 191R, 191G, and 191B are covered by the partition wall 216. Yes. Pixel electrodes 181, 191R, 191G, and 191B contain a material that reflects visible light. The common electrode 115 contains a material that transmits visible light.

[0278] The light emitted by the light-emitting devices 190R, 190G, and 190B is emitted towards the substrate 154. Furthermore, light is incident on the light-receiving device 110 through the substrate 154 and the adhesive layer 142. It is preferable to use a material with high transmittance to visible light for the substrate 154.

[0279] Pixel electrodes 181 and 191 can be manufactured using the same material and the same process. The common layer 112, common layer 114, and common electrode 115 are connected to the light receiving device 110 and the light emitting device Used in common with Vice 190R, 190G, and 190B. Light receiving device 110 and each color The light-emitting device has the same configuration in all aspects except for the difference in the configuration of the active layer 183 and the light-emitting layer. This makes it possible to receive light on the display device 100C without significantly increasing the manufacturing process. Device 110 can be built in.

[0280] A resin layer 159 and a light-shielding layer 158 are provided on the substrate 153 side of the insulating layer 157. The resin layer 159 is provided in a position that overlaps with the light-emitting devices 190R, 190G, and 190B. The light-shielding layer 158 is not provided in a position that overlaps with the light-receiving device 110. Covering the surface on the substrate 153 side, the side of the resin layer 159, and the surface of the resin layer 159 on the substrate 153 side. The light-shielding layer 158 is provided at a position that overlaps with the light-receiving device 110 and the light-emitting device 190. It has openings in positions that overlap with R, 190G, and 190B. A light-shielding layer 158 is provided. This allows the range in which the light-receiving device 110 detects light to be controlled. Also, the light-shielding layer By having 158, the light-emitting devices 190R, 190G, and 190B can be emitted without an object. This suppresses direct light incidence on the light receiving device 110. Therefore, noise is reduced. A highly sensitive sensor can be realized without the presence of a resin layer 159. The distance from 8 to each color light-emitting device is the distance from the light-shielding layer 158 to the light-receiving device 110. It is shorter compared to the distance. This reduces sensor noise while suppressing the display's dependence on the viewing angle. This is possible. Therefore, both display quality and imaging quality can be improved.

[0281] The configuration of the partition wall 216, light-shielding layer 219a, and spacer 219b in the display device 100C is This is the same as the display device 10K (Figures 7B and 8A).

[0282] In Figure 16, the partition wall 216 has an opening between the light-receiving device 110 and the light-emitting device 190R. It has. A light-shielding layer 219a is provided to fill the opening. The light-shielding layer 219a is It is located between the light-receiving device 110 and the light-emitting device 190R. The light-shielding layer 219a is The light emitted by the optical device 190R is absorbed. As a result, the light is incident on the light receiving device 110. It can suppress stray light.

[0283] Spacer 219b is located between light-emitting device 190G and light-emitting device 190B. The upper surface of spacer 219b is preferably closer to the light-shielding layer 158 than the upper surface of light-shielding layer 219a. For example, the sum of the height (thickness) of the partition wall 216 and the height (thickness) of the spacer 219b is It is preferable that the height (thickness) of the light layer 219a is greater than that of the adhesive layer 142. Filling becomes easier. As shown in Figure 17A, the spacer 219b and the light-shielding layer 158 Even if the light-shielding layer 158 is in contact with the common electrode 115 (or protective layer) in the overlapping area, good.

[0284] A connection portion 204 is provided in the area of ​​the substrate 153 where the substrate 154 does not overlap. In section 204, the wiring 165 is connected to F via the conductive layer 167, conductive layer 166, and connecting layer 242. It is electrically connected to PC172. Conductive layer 167 has the same conductive film as conductive layer 168. It can be obtained by processing. The upper surface of the connecting portion 204 is coated with the same conductive film as the pixel electrode 181. The conductive layer 166 obtained by the process is exposed. As a result, the connection part 204 and FPC 172 These can be electrically connected via the connecting layer 242.

[0285] Transistors 207, 208, 209, and 21 0 is a conductive layer 221 that functions as a gate, and an insulating layer 211 that functions as a gate insulating layer. A semiconductor layer having a channel-forming region 231i and a pair of low-resistance regions 231n, a pair of low-resistance regions The conductive layer 222a connects to one of the resistance regions 231n, and the other of the pair of low-resistance regions 231n connects to the other. A conductive layer 222b is connected, an insulating layer 225 functions as a gate insulating layer, and a gate functions as a gate. It has a conductive layer 223 and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is It is located between the conductive layer 221 and the channel-forming region 231i. The insulating layer 225 is located between the conductive layer 2 It is located between 23 and the channel-forming region 231i.

[0286] The conductive layer 222a and the conductive layer 222b are separated by openings provided in the insulating layer 215. It is connected to the low-resistance region 231n. Of the conductive layer 222a and conductive layer 222b, one is One acts as the source, and the other as the drain.

[0287] In Figure 16, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231, and the low It does not overlap with the resistive region 231n. For example, the conductive layer 223 is used as a mask for the insulating layer 225 By processing this material, the structure shown in Figure 16 can be fabricated. In Figure 16, the insulating layer 225 and conductive An insulating layer 215 is provided covering layer 223, and a conductive layer 222 is provided through an opening in the insulating layer 215. a and conductive layer 222b are connected to the low-resistance region 231n, respectively. Furthermore, conductive layer An insulating layer covering the transistor may be provided on 222a and the conductive layer 222b.

[0288] On the other hand, Figure 17B shows an example in which the insulating layer 225 covers the top and sides of the semiconductor layer. Conductive layer 2 22a and conductive layer 222b are provided in the insulating layer 225 and insulating layer 215 respectively. It is connected to the low-resistance region 231n via the port.

[0289] As described above, the display device of this embodiment has a light receiving device and a light emitting device in the display unit. Furthermore, the display unit has both the function of displaying an image and the function of detecting light. Compared to cases where the sensor is located outside the display unit or outside the display device, this method allows for miniaturization of the electronic device and It can be made lighter. Also, the sensor is located outside the display unit or outside the display device. By combining them, it's possible to create more multi-functional electronic devices.

[0290] The light-receiving device has at least one of the layers provided between a pair of electrodes that is a light-emitting device ( It can have a common configuration with EL devices. For example, the light-receiving device has a different configuration than the active layer. All layers can also share the same configuration as the light-emitting device (EL device). By simply adding a step of forming an active layer to the fabrication process of the light-emitting device, the light-emitting device and The light-receiving device and the light-emitting device can be formed on the same substrate. The pixel electrodes and common electrodes are formed using the same material and the same process. Yes, it is possible. Also, a circuit electrically connected to the light-receiving device and a circuit electrically connected to the light-emitting device. By manufacturing the circuit and the other using the same materials and processes, the manufacturing process of the display device is streamlined. It can be simplified. In this way, even without complex processes, a light receiving device can be built in, and convenience can be achieved. A highly accurate display device can be manufactured.

[0291] In this embodiment, the display device has a long distance from the light-shielding layer to the light-receiving device, and the light-shielding layer Structures are provided on the surface forming the light-shielding layer so that the distance to the light-emitting device is shortened. This reduces sensor noise, increases imaging resolution, and improves display's field of view dependency. This can suppress the quality of the display and the image quality in the display device. It can improve.

[0292] This embodiment can be appropriately combined with other embodiments. Furthermore, this specification Furthermore, if multiple configuration examples are shown within a single embodiment, the configuration examples may be combined as appropriate. It is possible to do so.

[0293] (Embodiment 2) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 18 and 19. ru.

[0294] [Example of pixel circuit configuration] First, an example of the pixel circuit configuration of a display device will be explained using Figure 18.

[0295] A display device according to one aspect of the present invention includes a display unit comprising a first pixel circuit having a light-receiving device and a light-emitting device. The first pixel circuit and the second pixel circuit are, They are arranged in a matrix.

[0296] Figure 18A shows an example of a first pixel circuit having a light-receiving device, and Figure 18B shows a light-emitting device An example of a second pixel circuit with a chair is shown.

[0297] The first pixel circuit PIX1 shown in Figure 18A consists of a light-receiving device PD, a transistor M1, and a transistor. It has transistor M2, transistor M3, transistor M4, and capacitor C1. This example shows a photodiode being used as the photodetector (PD).

[0298] The light-receiving device PD has its cathode electrically connected to wiring V1, and its anode connected to transistor M It is electrically connected to either the source or drain of transistor M1. The wire TX is electrically connected, with the other being either the source or drain, and the other being one electrode of the capacitor C1. One of the sources or drains of transistor M2 and the gate of transistor M3 are electrically connected. Continued. Transistor M2 has its gate electrically connected to wiring RES, and its source or drain The other end of the input is electrically connected to wiring V2. Transistor M3 is either the source or the drain. One end is electrically connected to wiring V3, and the other end, either source or drain, is connected to transistor M4. Electrically connect to either the source or the drain. Transistor M4 has its gate wired to S It is electrically connected to E, and the other end of either the source or drain is electrically connected to wiring OUT1.

[0299] A constant potential is supplied to wiring V1, wiring V2, and wiring V3, respectively. Light receiving device P When driving D with reverse bias, a potential lower than the potential of wiring V1 is supplied to wiring V2. To supply. Transistor M2 is controlled by the signal supplied to wiring RES, and the transistor A device that resets the potential of the node connected to the gate of M3 to the potential supplied to wiring V2. It has the ability. Transistor M1 is controlled by the signal supplied to wiring TX and is a light receiving device. A device that controls the timing of changing the potential of the above node in response to the charge generated in the PD. It has the ability. Transistor M3 is an amplification transistor that produces an output according to the potential of the above node. It functions as a transistor. Transistor M4 is controlled by the signal supplied to wiring SE, and above A selection tool for reading the output corresponding to the potential of the node using an external circuit connected to wiring OUT1. It functions as a transistor.

[0300] The second pixel circuit PIX2 shown in Figure 18B includes a light-emitting device EL, a transistor M5, and a transistor. It has an EL (electroluminescent) device. As an example, an example using a light-emitting diode is shown. In particular, as the light-emitting device EL, organic It is preferable to use an EL device.

[0301] Transistor M5 has its gate electrically connected to wiring VG, and one of its sources or drains. The wiring VS is electrically connected, and the other side of the source or drain is one electrode of capacitance C2. And electrically connect to the gate of transistor M6. The source or gate of transistor M6 One end of the rain is electrically connected to wiring V4, and the other end is connected to the anode of the light-emitting device EL, Connect electrically to either the source or drain of transistor M7. Transistor M7 The gate is electrically connected to wiring MS, and the other side of the source or drain is connected to wiring OUT2. Connect electrically. The cathode of the light-emitting device (EL) is electrically connected to wiring V5.

[0302] A constant potential is supplied to wiring V4 and wiring V5, respectively. Anode of light-emitting device EL The cathode side can be set to a higher potential, while the cathode side can be set to a lower potential than the anode side. M5 is controlled by a signal supplied to wiring VG, which determines the selection state of the second pixel circuit PIX2. It functions as a select transistor to control the gate. Transistor M6 also functions as a gate A drive transistor that controls the current flowing to the light-emitting device EL in accordance with the potential supplied to it. It functions as follows: When transistor M5 is conducting, the potential supplied to wiring VS is It is supplied to the gate of the ZISTA M6, and the luminescence brightness of the light-emitting device EL is controlled according to its potential. Transistor M7 is controlled by the signal supplied to wiring MS, This device outputs the potential between the ZISTA M6 and the light-emitting device EL to the outside via wiring OUT2. To have the ability.

[0303] Wiring V1 to which the cathode of the light-receiving device PD is electrically connected, and the cathode of the light-emitting device EL The wiring V5 to which the code is electrically connected can be on the same layer and at the same potential.

[0304] Here, the first pixel circuit PIX1 has transistors M1, M2, and The transistor M3, the transistor M4, and the transistors of the second pixel circuit PIX2 Channels are formed in all of transistors M5, M6, and M7. It is preferable to apply a transistor using a metal oxide (oxide semiconductor) in the semiconductor layer. This reduces the power consumption of the display device.

[0305] Alternatively, a semiconductor in which channels are formed in all transistors M1 to M7. It is preferable to use transistors with silicon in the layer. This allows for high-speed operation of the circuit. It becomes possible to drive it.

[0306] By using only one type of transistor in the display device, the manufacturing process for the display device can be reduced. This can improve yield.

[0307] Alternatively, one to six transistors from transistors M1 to M7. For the first transistor, an oxide semiconductor is used, and for the remaining transistors, silicon is used. A transistor can also be used. Below, we will discuss a transistor using an oxide semiconductor, This section will explain the case where both transistors using low-temperature polysilicon are used.

[0308] The transistors M1 and M2 of the first pixel circuit PIX1 are, respectively It is preferable to apply an oxide semiconductor transistor to the semiconductor layer where the channel is formed. It seems so.

[0309] The semiconductor layers of transistors M1 and M2 are, for example, made of indium and M (M stands for gallium, aluminum, silicon, boron, yttrium, tin, copper, ba Nadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum , lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium Preferably, it contains one or more species selected from zinc, and zinc. In particular, M It is one or more of the following selected from aluminum, gallium, yttrium, and tin. It is preferable to have one.

[0310] In particular, the semiconductor layer contains indium (In), gallium (Ga), and zinc (Zn). It is preferable to use an oxide (also written as IGZO).

[0311] For metal oxides that can be used in semiconductor layers, refer to the description in Embodiment 1. .

[0312] Using oxide semiconductors with a wider band gap and lower carrier density than silicon. Transistors can achieve extremely small off-currents. Therefore, their small The off-current causes the charge stored in the capacitor connected in series with the transistor to be released over a long period of time. It is possible to hold it. Therefore, in particular, transistor M connected in series with capacitor C1 Transistors 1 and M2 each use transistors with oxide semiconductors applied. It is preferable that the transistors M1 and M2 have oxide semiconductors. By applying transistors, the transistors are determined based on the charge generated in the photodetector PD. The potential held at the gate of transistor M3 is transmitted through transistor M1 or transistor M2. This can prevent leaks.

[0313] For example, when performing imaging using a global shutter method, the charge accumulation operation occurs depending on the pixel. The period between the end of the process and the start of the read operation (charge retention period) differs. Number of grayscale levels When a uniform image is captured, ideally all pixels have the same potential. A force signal is obtained. However, if the length of the charge retention period differs from row to row, the no of the pixels in each row If the charge accumulated in the pixel leaks out over time, the potential of the pixel's output signal will change. The tonal range differs from row to row, resulting in image data where the number of tonal gradations changes from row to row. Here, transistors having oxide semiconductors as transistors M1 and M2. By applying this, the potential change at the node can be reduced. That is, global Image data obtained using a shutter method may differ due to variations in charge retention periods. This minimizes changes in tonal gradation, thereby improving the quality of the captured image.

[0314] On the other hand, the transistor M3 in the first pixel circuit PIX1 has a low-temperature polymer in the semiconductor layer. It is preferable to use transistors using Recon. Low-temperature polysilicon is used as the semiconductor layer. The transistor used has a higher field-effect mobility than transistors using oxide semiconductors. This can be achieved, and it has excellent driving capability and current capability. Therefore, with transistor M3 This allows for faster operation compared to transistors M1 and M2. By using low-temperature polysilicon in the M3 semiconductor layer, the amount of light received by the photodetector PD is determined It is possible to quickly provide an output to transistor M4 in response to minute potentials.

[0315] In other words, in the first pixel circuit PIX1, transistors M1 and M2 have low leakage current. Furthermore, because transistor M3 has high driving capability, it reads from the photodetector PD. It is possible to read out minute potentials at high speed without leakage.

[0316] The transistor M4 in the first pixel circuit PIX1 receives the output from transistor M3. Because it functions as a switch to direct current to line OUT1, it is small, like transistors M1 to M3. It lacks the required functions such as low off-current and high-speed operation. Therefore, half of transistor M4 The conductive layer may be low-temperature polysilicon or an oxide semiconductor.

[0317] Furthermore, in the second pixel circuit PIX2 in Figure 18B, transistors M5 to Transis The M7 uses a transistor in which low-temperature polysilicon is applied to the semiconductor where the channel is formed. It is possible to use them, or to use transistors that utilize oxide semiconductors. Like the first pixel circuit PIX1, a transient using low-temperature polysilicon as a semiconductor layer A transistor may be used in combination with a transistor that uses an oxide semiconductor as its semiconductor layer. .

[0318] In particular, the transistor M5 connected in series with capacitor C2 uses an oxide semiconductor. It is preferable to use a transistor.

[0319] Note that in Figures 18A and 18B, the transistor is assumed to be an n-channel type transistor. Although indicated, p-channel transistors can also be used. The gate is not limited to a single gate, and may also have a back gate.

[0320] The transistor in the first pixel circuit PIX1 and the transistor in the second pixel circuit PIX2 It is preferable that the zistas are formed side by side on the same substrate. In particular, the first pixel circuit PIX The transistor in 1 and the transistor in the second pixel circuit PIX2 are in one region. It is preferable to have a configuration in which the elements are mixed together and arranged periodically.

[0321] Furthermore, transistors and capacitors are located in positions that overlap with the light-receiving device PD or light-emitting device EL. It is preferable to provide one or more layers having one or both of the above. This allows each pixel This reduces the effective footprint of the circuit, enabling the realization of a high-resolution light-receiving or display unit.

[0322] [Example of a display device configuration] Next, an example of a display device configuration will be explained using Figure 19.

[0323] The display unit PIX in Figure 19A can be the same as the display unit described in Embodiment 1. In the display unit PIX, pixels are arranged in a matrix, and the first pixel circuit PI in Figure 18A X1 and the second pixel circuit PIX2 in Figure 18B are arranged in a matrix. Gate dry The GD and source driver SD are electrically connected to the second pixel circuit PIX2 in Figure 18B. Then, a signal is supplied to the second pixel circuit PIX2. Row selection driver RD and readout circuit R OC is electrically connected to the first pixel circuit PIX1 in Figure 18A, and the first pixel circuit PIX A signal is supplied to 1. The row selection driver RD is the wiring S of the first pixel circuit PIX1 in Figure 18A. E and wiring RES are electrically connected. The readout circuit ROC is electrically connected to wiring OUT1. It connects to the network.

[0324] The row selection driver RD and the read circuit ROC are connected to the controller. Therefore, it is controlled by the same control. It is controlled by -ra.

[0325] The display unit PIX shown in Figure 19A is a transistor using low-temperature polysilicon as the semiconductor layer. It also includes a transistor that uses a metal oxide as a semiconductor layer.

[0326] On the other hand, the circuit provided around the display unit PIX in Figure 19A has a small off-current characteristic High-speed operation is more important than performance. Therefore, transistors using low-temperature polysilicon are used. It is preferable to configure it this way. Also, if it is a transistor using low-temperature polysilicon, then a p-type transistor is preferable. Since both transistors and n-type transistors can be fabricated in a single process, CMOS can be fabricated. Therefore, in particular, an amplifier electrically connected to the readout circuit ROC can be used. The amplifier circuit (AMP), the analog-to-digital converter (ADC) electrically connected to the amplifier circuit (AMP), and Since each of the controllers is preferably made of CMOS, low-temperature polysilicone It is preferable to form it using a transistor made of n.

[0327] In other words, the display unit PIX, gate driver GD, source driver SD, and row selection driver R. In addition to the readout circuit D, the amplifier circuit AMP and the analog-to-digital conversion circuit ADC are also included. The controller and other components can also be formed on the same substrate through a series of manufacturing processes. The analog-to-digital converter (ADC) outputs a digital signal. l) is output.

[0328] Figure 19B shows the display unit PIX, gate driver GD, source driver SD, and row selection driver. The RD and readout circuit ROC are all constructed using transistors with metal oxide channels. An example of the panel when this is done is shown. From the readout circuit ROC, an analog signal (Analo The signal (g) is output. In the case of a transistor using a metal oxide channel, Forming both n-type and p-type transistors from the same semiconductor material is possible with silicon. It is more difficult compared to silicon. In other words, it is more difficult to manufacture CMOS compared to silicon. Therefore, CMOS A preferred configuration includes an amplification circuit (AMP), an analog-to-digital conversion circuit (ADC), and a capacitor. The TOROA is not mounted on the same circuit board as the PIX display unit, but rather connects to a separately manufactured IC chip, etc. Therefore, it is preferable to provide an amplification circuit (AMP) and an analog-to-digital conversion circuit (ADC). stomach.

[0329] As shown in Figure 19A, all peripheral circuits of the PIX display unit use transistors made of low-temperature polysilicon. By using this configuration, panels can be provided at a lower price compared to the configuration shown in Figure 19B. As shown in Figure 19B, an external IC chip is used for the amplification circuit AMP and analog-to-digital conversion. Compared to using a pre-built ADC and controller, this reduces component and assembly costs. It can be reduced.

[0330] As described above, a display device according to one aspect of the present invention uses low-temperature polysilicon in the semiconductor layer. It has a converter. Therefore, various circuits composed of CMOS circuits are on the same board as the display unit. This makes it easier to create the necessary components. This simplifies the external circuitry implemented in the display device. This can reduce component costs and mounting costs. Or, one aspect of the present invention The display device has a transistor with an oxide semiconductor in the semiconductor layer. The power consumption of the display device can be reduced.

[0331] Alternatively, a display device according to one aspect of the present invention comprises a transistor using an oxide semiconductor in the semiconductor layer and It has two types of transistors: one that uses low-temperature polysilicon in the semiconductor layer, and another that uses low-temperature polysilicon in the semiconductor layer. Therefore, the semiconductor layer material can be changed depending on the function required of the transistor. Yes, it is possible. Furthermore, because it has transistors that use LTPS in the semiconductor layer, it can be used in CMOS circuits. This makes it easy to integrate the various circuits that make up the system onto the same circuit board as the display unit. This allows for the simplification of external circuits implemented in the device, reducing component costs and implementation costs. It is possible.

[0332] This embodiment can be combined with other embodiments as appropriate.

[0333] (Embodiment 3) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to Figures 20 to 22. ru.

[0334] The electronic device of this embodiment has a display device according to one aspect of the present invention. For example, the display of the electronic device A display device according to one aspect of the present invention can be applied to the display unit. Because it has the function of detecting light, biometric authentication can be performed on the display unit, or by touch. It can detect near touches. This allows for the functionality and convenience of electronic devices. It can be improved.

[0335] Examples of electronic devices include television equipment, desktop or notebook computers, etc. Sony Computer, monitors for computers, digital signage, pachinko machines, etc. In addition to electronic devices with relatively large screens such as large game consoles, digital cameras, and digital cameras Digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals Examples include sound reproduction devices.

[0336] The electronic device of this embodiment has sensors (force, displacement, position, velocity, acceleration, angular velocity, rotational speed, Distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, electric current, voltage, power, radiation (including functions for measuring radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation) It's fine if you do that.

[0337] The electronic device of this embodiment can have various functions. For example, it can display various information (static Functions to display still images, videos, text images, etc. on the display unit, touch panel function, calendar - Functions to display the date or time, and to run various software (programs) Functions, wireless communication functions, and functions to read programs or data recorded on recording media. It may have the following:

[0338] The electronic device 6500 shown in Figure 20A is a portable information device that can be used as a smartphone. It is a terminal device.

[0339] The electronic device 6500 consists of a housing 6501, a display unit 6502, a power button 6503, and a button 65 04, includes speaker 6505, microphone 6506, camera 6507, and light source 6508, etc. The display unit 6502 is equipped with a touch panel function.

[0340] A display device according to one aspect of the present invention can be applied to the display unit 6502.

[0341] Figure 20B is a schematic cross-sectional view of the housing 6501, including the end on the microphone 6506 side.

[0342] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501. Within the space surrounded by the protective member 6510, there is a display panel 6511, an optical member 6512, and a touch The sensor panel 6513, printed circuit board 6517, battery 6518, etc. are located here. .

[0343] The protective member 6510 includes a display panel 6511, an optical member 6512, and a touch sensor panel. The 6513 is fixed by an adhesive layer (not shown).

[0344] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back. The FPC6515 is connected to the folded portion. C6516 is mounted. FPC6515 is located on the edge of the printed circuit board 6517. It is connected to the child.

[0345] A flexible display according to one aspect of the present invention can be applied to the display panel 6511. This makes it possible to create extremely lightweight electronic devices. Also, the display panel 6511 is extremely Because it is thin, it is possible to keep the thickness of electronic devices down while also equipping them with a large-capacity 6518 battery. Also, a part of the display panel 6511 is folded back, and the FPC6515 is attached to the back of the pixel area. By positioning the connection points, it is possible to realize electronic devices with narrow bezels.

[0346] Figure 21A shows an example of a television system. The television system 7100 is housed in a casing 7101 The display unit 7000 is incorporated into it. Here, the stand 7103 connects to the housing 7101. This shows a configuration that supports this.

[0347] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0348] The television device 7100 shown in Figure 21A is operated using the control switches provided on the housing 7101. Alternatively, it can be done using a separate remote control unit 7111. Or, the display unit 7000 can be used. It may also be equipped with a touch sensor, and by touching the display unit 7000 with a finger, etc., the television will be activated. You may operate the unit 7100. The remote control unit 7111 It may have a display unit that displays information output from it. Remote control operator 7111 is equipped Channel and volume can be controlled using the control keys or touch panel. The image displayed on the display unit 7000 can be manipulated.

[0349] The television system 7100 will consist of a receiver and a modem, etc. This allows you to receive regular television broadcasts. Additionally, you can receive them via a modem using either a wired or wireless connection. By connecting to a line communication network, one-way (sender to receiver) or bidirectional communication is possible. It is also possible to communicate information in a direction (between a sender and receiver, or between receivers). ru.

[0350] Figure 21B shows an example of a notebook personal computer. The computer 7200 consists of a chassis 7211, a keyboard 7212, and a pointing device 721. 3. It has external connection ports 7214, etc. The display unit 7000 is incorporated into the housing 7211. It is.

[0351] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0352] Figures 21C and 21D show examples of digital signage.

[0353] The digital signage 7300 shown in Figure 21C consists of a housing 7301, a display unit 7000, and a screen. It has a Pika 7303, etc. Furthermore, it has an LED lamp, an operation key (power switch, or operation key). It may include a switch, connection terminals, various sensors, a microphone, etc.

[0354] Figure 21D shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is installed along the curved surface of the column 7401. do.

[0355] In Figures 21C and 21D, a display device according to one embodiment of the present invention is applied to the display unit 7000. It is possible.

[0356] The larger the display area 7000, the more information can be provided at once. The wider the area (7000), the more easily it catches people's attention, which can, for example, enhance the effectiveness of advertising. Cut.

[0357] By applying a touch panel to the display unit 7000, images or videos can be displayed on the display unit 7000. It's desirable that it not only displays information but also allows users to operate it intuitively. Also, route information... Alternatively, if used for purposes such as providing traffic information, intuitive operation is possible. This can improve usability.

[0358] Furthermore, as shown in Figures 21C and 21D, the digital signage 7300 or digital signage Inage 7400 is an information terminal 7311 or a smartphone owned by the user. It is preferable that the information terminal 7411 can be linked via wireless communication. For example, the display unit 7 Information about the advertisement displayed at 000 is shown on the screen of information terminal 7311 or information terminal 7411. It can be displayed on the information terminal 7311 or the information terminal 7411. This allows you to switch the display on the 7000 display unit.

[0359] In addition, the information terminal 7 is connected to the digital signage 7300 or digital signage 7400. Execute a game using the screen of either the 311 or the information terminal 7411 as the control device (controller). It is also possible to allow this. This allows a large number of users to participate in the game simultaneously and enjoy it. It is possible.

[0360] The electronic equipment shown in Figures 22A to 22F consists of a housing 9000, a display unit 9001, and a speaker 90 03. Operation key 9005 (including power switch or operation switch), connection terminal 900 6. Sensor 9007 (force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, Magnetism, temperature, chemicals, sound, time, hardness, electric field, electric current, voltage, power, radiation, flow rate, humidity (Including functions for measuring degrees, incline, vibration, odor, or infrared radiation), Microphone 90 It has 08, etc.

[0361] The electronic devices shown in Figures 22A to 22F have various functions. For example, they can display various information (static Functions to display still images, videos, text images, etc. on the display unit, touch panel function, calendar - Functions that display the date or time, etc., processed by various software (programs) Functions to control the system, wireless communication functions, programs or data recorded on the recording medium. It may have functions such as reading and processing data. However, the functions of electronic devices are not limited to these. It is not limited to having multiple displays, and can have various functions. Furthermore, an electronic device may be equipped with a camera, etc., to capture still images or videos, and the recording medium (external or digital) may be used. Even if it has a function to save (built into the camera), a function to display captured images on the display unit, etc. good.

[0362] Details of the electronic equipment shown in Figures 22A to 22F will be explained below.

[0363] Figure 22A is a perspective view showing the personal digital assistant 9101. The personal digital assistant 9101 is, for example, It can be used as a smartphone. Note that the mobile information terminal 9101 has a speaker. 9003, connection terminal 9006, sensor 9007, etc. may be provided. Also, portable information terminal 9 101 can display text and image information on its multiple surfaces. Figure 22A shows three This shows an example of displaying icon 9050. It also shows information 9051, indicated by a dashed rectangle. The display unit 9001 can also be displayed on other sides. An example of information 9051 is electronic mail. Notifications of incoming calls, SNS messages, and phone calls; subject, sender name, and date / time for emails and SNS messages. This includes the time, battery level, and antenna signal strength. Alternatively, information 9051 may be displayed. You may display icons such as icon 9050 in the designated area.

[0364] Figure 22B is a perspective view showing the personal digital assistant 9102. The personal digital assistant 9102 displays It has the function of displaying information on three or more sides of section 9001. Here, information 9052, information 9 This shows an example where information 053 and 9054 are displayed on different sides. For example, the user With the mobile information terminal 9102 stored in the breast pocket of his clothing, the mobile information terminal 9102 Information 9053, displayed in a position that can be observed from above, can also be viewed by the user. Without taking the 9102 personal digital assistant out of your pocket, you can check the display and, for example, answer a phone call. It allows you to decide whether or not to do it.

[0365] Figure 22C is a perspective view showing a wristwatch-type personal information terminal 9200. Personal information terminal 920 0 can be used, for example, as a smartwatch. Also, the display unit 9001 is The display surface is curved, allowing the display to follow the curved surface. The wireless information terminal 9200 communicates with, for example, a wireless headset. It also allows for hands-free calling. Furthermore, the mobile information terminal 9200 has a connection terminal 90 With 06, it is also possible to transmit data to other information terminals and to charge them. Charging may also be performed via wireless power transfer.

[0366] Figures 22D to 22F are perspective views showing a foldable portable information terminal 9201. Figure 22D shows the mobile information terminal 9201 in its unfolded state, Figure 22F shows it in its folded state, and Figure 2 Figure 2E is a perspective view showing the state in the process of changing from one of Figures 22D and 22F to the other. The 9201 information terminal offers excellent portability when folded and a seamless, wide design when unfolded. The display area provides excellent readability. The display unit 9001 of the portable information terminal 9201 It is supported by three housings 9000 connected by hinges 9055. For example, The display unit 9001 can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less.

[0367] This embodiment can be combined with other embodiments as appropriate. [Explanation of Symbols]

[0368] C1: Capacity, C2: Capacity, L1: Shortest distance, L2: Shortest distance, L3: Thickness, L4: Sum, M 1: Transistor, M2: Transistor, M3: Transistor, M4: Transistor, M 5: Transistor, M6: Transistor, M7: Transistor, OUT1: Wiring, OUT 2: Wiring, PIX1: Pixel circuit, PIX2: Pixel circuit, V1: Wiring, V2: Wiring, V3: Wiring, V4: Wiring, V5: Wiring, 10: Display device, 10A: Display device, 10B: Display device , 10C: Display device, 10D: Display device, 10E: Display device, 10F: Display device, 10G :Display device, 10H:Display device, 10J:Display device, 10K:Display device, 10L:Display device 10M: Display device, 10N: Display device, 10P: Display device, 10Q: Display device, 21 :Emission, 21B:Light, 21G:Light, 21R:Light, 22:Light, 23:Light, 23a:Stray light, 2 3b: Stray light, 23c: Stray light, 23d: Stray light, 24: Reflected light, 41: Transistor, 42: Transistor, 42B: Transistor, 42G: Transistor, 42R: Transistor, 50A: Display device, 50B: Display device, 51: Circuit board, 52: Finger, 53: Light receiving device Layers, 55: Layer with transistors, 57: Layer with light-emitting devices, 59: Substrate, 100A: Display device, 100B: Display device, 100C: Display device, 110: Light receiving device 112: Common layer, 113: Light-emitting layer, 114: Common layer, 115: Common electrode, 116: Protection Layers, 116a: inorganic insulating layer, 116b: organic insulating layer, 116c: inorganic insulating layer, 142: contact Layer, 143: Space, 146: Lens array, 149: Lens, 151: Substrate, 152: Substrate, 153: Substrate, 154: Substrate, 155: Adhesive layer, 156: Adhesive layer, 157: Insulating layer , 158: light shielding layer, 159: resin layer, 159p: opening, 160: void, 162: display section, 164: Circuit, 165: Wiring, 166: Conductive layer, 167: Conductive layer, 168: Conductive layer, 16 9B: Conductive layer, 169G: Conductive layer, 169R: Conductive layer, 172: FPC, 173: IC, 181: Pixel electrode, 182: Buffer layer, 183: Active layer, 184: Buffer layer, 190 : Light-emitting device, 190B: Light-emitting device, 190G: Light-emitting device, 190R: Light-emitting device Vice, 191: pixel electrode, 191B: pixel electrode, 191G: pixel electrode, 191R: pixel Electrode, 192: buffer layer, 193: light-emitting layer, 193B: light-emitting layer, 193G: light-emitting layer, 1 93R: Emitting layer, 194: Buffer layer, 197: Optical adjustment layer, 197B: Optical adjustment layer, 1 97G: Optical adjustment layer, 201: Transistor, 203: Transistor, 204: Connector, 205: Transistor, 206: Transistor, 207: Transistor, 208: Transistor Zista, 209: Transistor, 210: Transistor, 211: Insulating layer, 212: Insulation Layer, 213: insulating layer, 214: insulating layer, 214a: insulating layer, 214b: insulating layer, 215: Insulating layer, 216: partition, 217: partition, 219a: light-shielding layer, 219b: spacer, 219 c: side wall, 220: gap, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 22 3: conductive layer, 225: insulating layer, 228: region, 230: region, 231: semiconductor layer, 231 i: Channel formation region, 231n: Low resistance region, 242: Connecting layer, 6500: Electronic equipment, 6501: Enclosure, 6502: Display unit, 6503: Power button, 6504: Button, 650 5: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 6510: Protection Components, 6511: Display panel, 6512: Optical component, 6513: Touch sensor panel, 6 515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 70 00: Display unit, 7100: Television device, 7101: Housing, 7103: Stand, 7 111: Remote control unit, 7200: Notebook personal computer, 7211: Enclosure 7212: Keyboard, 7213: Pointing device, 7214: External connection port T, 7300: Digital signage, 7301: Enclosure, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 9 000: Enclosure, 9001: Display unit, 9003: Speaker, 9005: Operation keys, 9006 :Connection terminal, 9007:Sensor, 9008:Microphone, 9050:Icon, 90 51: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9 101: Mobile information terminal, 9102: Mobile information terminal, 9200: Mobile information terminal, 9201: Mobile device

Claims

[Claim 1] It comprises a substrate, a first pixel circuit, and a second pixel circuit, The first pixel circuit comprises a light-receiving device, a first transistor, and a second transistor. The second pixel circuit has a light-emitting device, The light-receiving device has a first pixel electrode, an active layer, and a common electrode. The light-emitting device has a second pixel electrode, a light-emitting layer, and the common electrode. The active layer is located on the first pixel electrode, The active layer has a first organic compound, The light-emitting layer is located on the second pixel electrode, The light-emitting layer has a second organic compound different from the first organic compound, The common electrode has a portion that overlaps with the first pixel electrode via the active layer and a portion that overlaps with the second pixel electrode via the light-emitting layer. The first transistor has a low-temperature polysilicon semiconductor layer, The second transistor is a display device having a metal oxide in its semiconductor layer.

Images