Indication device

Abstract

To provide a display device with an imaging function. To reduce noise during imaging. [Solution] The display device includes a first pixel electrode, a second pixel electrode, a first organic layer, a second organic layer, a common electrode, a spacer, a protective layer, and a light-shielding layer. The first organic layer is provided on the first pixel electrode. The second organic layer is provided on the second pixel electrode. The common electrode has a portion that overlaps with the first pixel electrode via the first organic layer and a portion that overlaps with the second pixel electrode via the second organic layer. The protective layer is provided covering the common electrode. The spacer is transparent to visible light and has a portion that overlaps with the first pixel electrode via the protective layer, the common electrode, and the first organic layer. The light-shielding layer is provided on the spacer and has an opening that overlaps with the second pixel electrode. The first organic layer includes a photoelectric conversion layer, and the second organic layer includes a light-emitting layer.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device. One aspect of the present invention relates to an imaging device. One aspect of the present invention relates to a display device having an imaging function.

[0002] It should be noted that one aspect of the present invention is not limited to the above-mentioned technical field. Examples of technical fields of one aspect of the present invention disclosed herein include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, electronic devices, lighting devices, input devices, input / output devices, methods for driving them, or methods for manufacturing them. A semiconductor device refers to any device that can function by utilizing semiconductor properties. [Background technology]

[0003] In recent years, display devices have been required to be highly detailed in order to display high-resolution images. Furthermore, in information terminal devices such as smartphones, tablet devices, and notebook PCs (personal computers), display devices are required to be not only highly detailed but also to have low power consumption. In addition, there is a demand for display devices that not only display images but also have various additional functions, such as touch panel functionality or fingerprint imaging for authentication.

[0004] As a display device, for example, a light-emitting device having a light-emitting element has been developed. Light-emitting elements (also referred to as EL elements) that utilize the electroluminescence (EL) phenomenon have features such as being easy to make thin and light, being able to respond quickly to input signals, and being able to be driven using a DC constant voltage power supply, and are being applied to display devices. For example, Patent Document 1 discloses a flexible light-emitting device to which an organic EL element is applied. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2014-197522 [Overview of the project] [Problems that the invention aims to solve]

[0006] One aspect of the present invention aims to provide a display device having an imaging function. Alternatively, it aims to provide a high-definition imaging device or display device. Alternatively, it aims to reduce noise during imaging. Alternatively, it aims to provide an imaging device or display device capable of high-sensitivity imaging. Alternatively, it aims to provide a display device or imaging device with a high aperture ratio. Alternatively, it aims to provide a display device capable of acquiring biometric information such as fingerprints. Alternatively, it aims to provide a display device that functions as a touch panel.

[0007] One aspect of the present invention aims to provide a highly reliable display device, imaging device, or electronic device. Another aspect of the present invention aims to provide a display device, imaging device, or electronic device having a novel configuration. Another aspect of the present invention aims to mitigate at least one of the problems of the prior art.

[0008] Furthermore, the description of these problems does not preclude the existence of other problems. Moreover, one aspect of the present invention does not need to solve all of these problems. Other problems can be identified from the description in the specification, drawings, claims, etc. [Means for solving the problem]

[0009] One aspect of the present invention is a display device having a first pixel electrode, a second pixel electrode, a first organic layer, a second organic layer, a common electrode, a spacer, a protective layer, and a light-shielding layer. The first organic layer is provided on the first pixel electrode. The second organic layer is provided on the second pixel electrode. The common electrode has a portion that overlaps with the first pixel electrode via the first organic layer and a portion that overlaps with the second pixel electrode via the second organic layer. The protective layer is provided covering the common electrode. The spacer is light-transmitting to visible light and has a portion that overlaps with the first pixel electrode via the protective layer, the common electrode, and the first organic layer. The light-shielding layer is provided on the spacer and has an opening that overlaps with the second pixel electrode. The first organic layer includes a photoelectric conversion layer, and the second organic layer includes a light-emitting layer.

[0010] Furthermore, in the above, it is preferable that the spacer has an island-shaped upper surface. Also, it is preferable that the light-shielding layer is provided so as to cover a part of the upper surface and the side surface of the spacer.

[0011] Furthermore, in any of the above, it is preferable that, in a plan view, the opening of the light-shielding layer is located inside the contour of the first pixel electrode and also inside the contour of the first organic layer.

[0012] Furthermore, it is preferable to have an additional lens in any of the above configurations. The lens is preferably located on the spacer and overlapping with the first pixel electrode. Furthermore, it is preferable that the lens overlaps with the opening of the light-shielding layer, and that the light-shielding layer covers the edge of the lens.

[0013] Furthermore, in any of the above, it is preferable that the spacer has the function of transmitting light of the first color and absorbing light of the second color. In addition, it is preferable that the light-shielding layer has the function of absorbing light of the first color and transmitting light of the second color.

[0014] Furthermore, it is preferable that the light-shielding layer has a portion that overlaps with the second organic layer. Moreover, it is preferable that the second organic layer has the function of emitting light including light of a second color.

[0015] Further, in the above, it is preferable that the second organic layer has a function of emitting white light.

[0016] Further, in any of the above, it is preferable to further have a first insulating layer. The first insulating layer is preferably provided so as to cover the ends of the first pixel electrode and the ends of the second pixel electrode. Further, it is preferable that the first organic layer and the second organic layer each have a portion located on the first insulating layer.

[0017] Further, in any of the above, it is preferable that the first side surface of the first organic layer and the second side surface of the second organic layer are provided to face each other. The first organic layer preferably has a portion where the angle formed by the first side surface and the bottom surface is 45 degrees or more and 100 degrees or less. The second organic layer preferably has a portion where the angle formed by the second side surface and the bottom surface is 45 degrees or more and 100 degrees or less.

[0018] Further, in the above, it is preferable to further have a second insulating layer. The second insulating layer has a portion in contact with the first side surface and a portion in contact with the second side surface. Also, the second insulating layer preferably includes an inorganic insulating film.

[0019] Further, in the above, it is preferable to further have a resin layer. The resin layer preferably has a portion overlapping the first organic layer through the second insulating layer and a portion overlapping the second organic layer through the second insulating layer. Further, it is preferable that the common electrode has a portion located on the resin layer. Also, at this time, it is preferable that the spacer has a portion located on the resin layer.

Advantages of the Invention

[0020] According to one aspect of the present invention, a display device having an imaging function can be provided. Or, a high-definition imaging device or display device can be provided. Or, noise during imaging can be reduced. Or, a display device or imaging device with a high aperture ratio can be provided. Or, an imaging device or display device capable of performing high-sensitivity imaging can be provided. Or, a display device capable of acquiring biometric information such as fingerprints can be provided. Or, a display device functioning as a touch panel can be provided.

[0021] According to one aspect of the present invention, a highly reliable display device, imaging device, or electronic device can be provided. Or, a display device, imaging device, or electronic device etc. having a novel configuration can be provided. Or, at least one of the problems of the prior art can be at least alleviated.

[0022] Note that the description of these effects does not prevent the existence of other effects. Note that one aspect of the present invention does not necessarily have to have all of these effects. Note that other effects can be extracted from the descriptions in the specification, drawings, claims, etc.

Brief Description of the Drawings

[0023] [Figure 1] FIG. 1A and FIG. 1B are diagrams showing a configuration example of a display device. [Figure 2] FIG. 2A and FIG. 2B are diagrams showing a configuration example of a display device. [Figure 3] FIG. 3A and FIG. 3B are diagrams showing a configuration example of a display device. [Figure 4] FIG. 4A and FIG. 4B are diagrams showing a configuration example of a display device. [Figure 5] FIG. 5A and FIG. 5B are diagrams showing a configuration example of a display device. [Figure 6] FIG. 6A and FIG. 6B are diagrams showing a configuration example of a display device. [Figure 7] FIG. 7A and FIG. 7B are diagrams showing a configuration example of a display device. [Figure 8]Figures 8A to 8C show examples of the configuration of a display device. [Figure 9] Figures 9A to 9C show examples of display device configurations. [Figure 10] Figures 10A and 10B show examples of display device configurations. [Figure 11] Figures 11A to 11C show examples of display device configurations. [Figure 12] Figures 12A and 12B show examples of display device configurations. [Figure 13] Figure 13 shows an example of a display device configuration. [Figure 14] Figure 14A shows an example of the configuration of a display device. Figure 14B shows an example of the configuration of a transistor. [Figure 15] Figures 15A, 15B, and 15D are cross-sectional views showing examples of display devices. Figures 15C and 15E show examples of images. Figures 15F through 15H are top views showing examples of pixels. [Figure 16] Figure 16A is a cross-sectional view showing an example of the configuration of a display device. Figures 16B to 16D are top views showing examples of pixels. [Figure 17] Figure 17A is a cross-sectional view showing an example of the configuration of a display device. Figures 17B to 17I are top views showing an example of a pixel. [Figure 18] Figures 18A and 18B show examples of the configuration of a display device. [Figure 19] Figures 19A to 19G show examples of display device configurations. [Figure 20] Figures 20A to 20C show examples of display device configurations. [Figure 21] Figures 21A to 21F show examples of pixels. Figures 21G and 21H show examples of pixel circuit diagrams. [Figure 22] Figures 22A and 22B show examples of electronic devices. [Figure 23] Figures 23A to 23D show examples of electronic devices. [Figure 24]Figures 24A to 24F show examples of electronic devices. [Figure 25] Figures 25A to 25F show examples of electronic devices. [Modes for carrying out the invention]

[0024] The embodiments will be described below with reference to the drawings. However, it will be readily apparent to those skilled in the art that the embodiments can be implemented in many different ways, and their form and details can be modified in various ways without departing from the spirit and scope thereof. Accordingly, the present invention shall not be construed as being limited to the contents of the following embodiments.

[0025] In the configuration of the invention described below, the same reference numerals are used in common across different drawings for identical parts or parts having similar functions, and repeated explanations are omitted. Furthermore, when referring to similar functions, the hatch patterns are the same, and reference numerals may not be assigned.

[0026] In the figures described herein, the size of each component, the thickness of the layers, or the area may be exaggerated for clarity. Therefore, the scale is not necessarily limited to those figures.

[0027] Furthermore, ordinal numbers such as "the first," "the second," etc., used in this specification are added to avoid confusion of constituent elements and do not imply any numerical limitation.

[0028] Furthermore, in this specification, the terms "film" and "layer" are interchangeable. For example, the terms "conductive layer" or "insulating layer" may be interchangeable with the terms "conductive film" or "insulating film."

[0029] In this specification, the top surface shape of a component refers to the contour shape of that component in a plan view. A plan view refers to a view from the direction normal to the surface on which the component is formed, or to the surface of the support (e.g., substrate) on which the component is formed.

[0030] In this specification, the term "EL layer" refers to a layer (also called a light-emitting layer) provided between a pair of electrodes of a light-emitting element and containing at least a light-emitting substance, or a laminate including a light-emitting layer.

[0031] In this specification, a display panel, which is one form of a display device, has the function of displaying (outputting) images or the like on its display surface. Therefore, a display panel is one form of an output device.

[0032] Furthermore, in this specification, a display panel on which a connector such as an FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package) is attached, or on which an IC is mounted on the board using a COG (Chip On Glass) method, may be referred to as a display panel module, display module, or simply a display panel.

[0033] (Embodiment 1) This embodiment describes an example of the configuration of a display device according to one aspect of the present invention, and an example of a method for manufacturing the display device.

[0034] One aspect of the present invention is a display device having a light-emitting element (also called a light-emitting device) and a light-receiving element (also called a light-receiving device). The light-emitting element has a pair of electrodes and an EL layer between them. The light-receiving element has a pair of electrodes and an active layer between them. The light-emitting element is preferably an organic EL element (organic electroluminescent element). The light-receiving element is preferably an organic photodiode (organic photoelectric conversion element).

[0035] Furthermore, it is preferable that the display device has two or more light-emitting elements with different emission colors. Each light-emitting element with a different emission color has an EL layer containing a different material. For example, a full-color display device can be realized by having three types of light-emitting elements that emit red (R), green (G), or blue (B) light, respectively.

[0036] One aspect of the present invention functions as an imaging device because it can capture images using multiple light-receiving elements. In this case, the light-emitting element can be used as a light source for imaging. Another aspect of the present invention functions as a display device because it can display images using multiple light-emitting elements. Therefore, one aspect of the present invention can be described as a display device having an imaging function, or an imaging device having a display function.

[0037] For example, in one embodiment of the present invention, a display device has light-emitting elements arranged in a matrix on the display unit, and further, light-receiving elements arranged in a matrix on the display unit. Therefore, the display unit has the function of displaying an image and the function of a light-receiving unit. Since an image can be captured by the multiple light-receiving elements provided on the display unit, the display device can function as an image sensor or a touch panel. That is, it can capture an image with the display unit, or detect when an object approaches or comes into contact with it. Furthermore, since the light-emitting elements provided on the display unit can be used as a light source when receiving light, there is no need to provide a light source separately from the display device, and a highly functional display device can be realized without increasing the number of electronic components.

[0038] In one aspect of the present invention, when an object reflects the light emitted by a light-emitting element of the display unit, a light-receiving element can detect the reflected light, thereby enabling imaging or touch detection (including non-contact) even in dark environments.

[0039] Furthermore, a display device according to one aspect of the present invention can capture a fingerprint or palm print when a finger, palm, or the like is placed in contact with the display unit. Therefore, an electronic device equipped with a display device according to one aspect of the present invention can perform personal authentication using the captured image of a fingerprint or palm print. This eliminates the need to provide a separate imaging device for fingerprint or palm print authentication, thereby reducing the number of components in the electronic device. In addition, since light-receiving elements are arranged in a matrix on the display unit, fingerprints or palm prints can be captured at any location on the display unit, resulting in a highly convenient electronic device.

[0040] Another biometric authentication method is facial recognition. However, with facial recognition, the accuracy of authentication can vary depending on the situation, such as when wearing a mask. On the other hand, authentication methods using fingerprints, palm prints, or vein patterns have almost no variation in authentication accuracy due to the measurement environment, making them more accurate authentication methods.

[0041] When imaging fingerprints and other images using a light-receiving element, the light emitted by the light-emitting element of the display unit can be used as the light source. In this case, it is preferable to make the light-emitting element emit light instantaneously (for example, 100 μs or more and 100 ms or less). By shortening the emission time, degradation of the light-emitting element can be suppressed even when emitting light at high brightness. Furthermore, by imaging using instantaneous and high-brightness light emission, an image with enhanced contrast (shading) can be obtained, making it possible to image the uneven shape of fingerprints and other images more clearly.

[0042] It is preferable to provide a light-shielding layer on the light-receiving surface side of the light-receiving element that defines the range (imaging range) in which light enters the light-receiving element. The narrower the imaging range of the light-receiving element, the clearer the image that can be captured. The light-shielding layer has the function of a pinhole to prevent light from entering the light-receiving element from oblique directions and to sharpen the image. For example, a light-shielding thin film with an opening at a position overlapping with the light-receiving element can be used as the light-shielding layer.

[0043] Furthermore, if the aperture diameter of the light-shielding layer is the same, the greater the distance between the light-receiving surface of the photodetector and the light-shielding layer, the narrower the imaging range can be, and a clearer image can be captured. Therefore, a light-transmitting spacer (also called a light-transmitting layer) is placed between the photodetector and the light-shielding layer. The spacer is laminated on the photodetector with a barrier layer in between. The thicker the spacer, the greater the distance between the light-shielding layer and the photodetector, and a clearer image can be captured.

[0044] Furthermore, it is preferable to form the spacers located on the photodetector in an island-like pattern, and to provide a light-shielding layer that covers a part of the upper surface and the sides of the spacers. By providing the light-shielding layer along the sides of the spacers, the photodetector's light-receiving surface can be surrounded by the light-shielding layer. As a result, the path of stray light (also called stray light) emitted from the light-emitting element and diffused inside the display device can be blocked by the light-shielding layer, and the incidence of such stray light on the photodetector can be suppressed. Since such stray light is a source of noise when imaging with the photodetector, the sensitivity of imaging (signal-to-noise ratio (S / N ratio)) can be increased by blocking such stray light.

[0045] Furthermore, a display device can be constructed by combining a white-emitting light-emitting element with a color filter. In this case, the same light-emitting element can be applied to each of the pixels (sub-pixels) that emit light of different colors. In this way, the EL layer of all light-emitting elements can be formed in common, thus simplifying the manufacturing process.

[0046] Below, we will explain more specific examples with reference to the diagrams.

[0047] [Configuration Example 1] [Configuration Example 1-1] Figure 1A shows a schematic top view of the display device 100. The display device has multiple red-emitting light-emitting elements 110R, green-emitting light-emitting elements 110G, blue-emitting light-emitting elements 110B, and light-receiving elements 110S. In Figure 1A, to simplify the distinction between each light-emitting element and light-receiving element, the symbols R, G, B, or S are added within the light-emitting area of ​​each light-emitting element or within the light-receiving area of ​​the light-receiving element.

[0048] The light-emitting element 110R, light-emitting element 110G, light-emitting element 110B, and light-receiving element 110S are each arranged in a matrix. Figure 1A shows a configuration in which two elements are arranged alternately in one direction. Note that the arrangement method of the light-emitting and light-receiving elements is not limited to this, and arrangement methods such as stripe arrangement, S-stripe arrangement, delta arrangement, Bayer arrangement, and zigzag arrangement may be applied, or a pentile arrangement or diamond arrangement may be used.

[0049] Furthermore, Figure 1A shows an example where the light-emitting element and the light-receiving element are arranged at the same period. In other words, Figure 1A is an example where the resolution (density) of the light-emitting element and the resolution (density) of the light-receiving element are the same. Note that the arrangement period of the light-emitting element and the arrangement period of the light-receiving element may be different. For example, the arrangement period of the light-emitting element may be shorter than the arrangement period of the light-receiving element, or conversely, the arrangement period of the light-emitting element may be longer than the arrangement period of the light-receiving element.

[0050] It is preferable to use EL elements such as OLED (Organic Light Emitting Diode) or QLED (Quantum-dot Light Emitting Diode) as the light-emitting elements 110R, 110G, and 110B. Examples of light-emitting materials for EL elements include fluorescent materials, phosphorescent materials, thermally activated delayed fluorescence (TADF) materials, and inorganic compounds (such as quantum dot materials).

[0051] As the light-receiving element 110S, for example, a pn-type or pin-type photodiode can be used. The light-receiving element 110S functions as a photoelectric conversion element that detects light incident on the light-receiving element 110S and generates an electric charge. The amount of charge generated by the photoelectric conversion element is determined according to the amount of incident light. In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving element 110S. Organic photodiodes are easy to thin, lighten, and enlarge in area, and also offer a high degree of freedom in shape and design, making them applicable to a variety of devices.

[0052] Figure 1B shows a schematic cross-sectional view corresponding to the dashed line A1-A2 in Figure 1A. Figure 1B shows schematic cross-sectional views of the light-emitting element 110R, the light-receiving element 110S, and the light-emitting element 110G.

[0053] The light-emitting element 110R, light-emitting element 110G, light-emitting element 110B (not shown), and light-receiving element 110S are provided on the substrate 101. Furthermore, the light-emitting elements 110R, 110G, 110B, and light-receiving element 110S are covered by an adhesive layer 171 and the substrate 170.

[0054] The light-emitting element 110R has a pixel electrode 111R, an organic layer 112R, and a common electrode 113. The light-emitting element 110G has a pixel electrode 111G, an organic layer 112G, and a common electrode 113. The light-receiving element 110S has a pixel electrode 111S, an organic layer 155, and a common electrode 113. The common electrode 113 is provided in common to the light-emitting elements 110R, 110G, 110B (not shown), and 110S. Here, the pixel electrode 111S of the light-receiving element 110S can also be called a sensor electrode, a light-receiving electrode, an imaging electrode, etc.

[0055] The organic layer 112R of the light-emitting element 110R contains a luminescent organic compound that emits at least red light. The organic layer 112G of the light-emitting element 110G contains a luminescent organic compound that emits at least green light. The organic layer 112B (not shown) of the light-emitting element 110B contains a luminescent organic compound that emits at least blue light. The layers containing luminescent organic compounds in organic layer 112R, organic layer 112G, and organic layer 112B can also be called light-emitting layers.

[0056] The organic layer 155 of the light-receiving element 110S contains a photoelectric conversion material that is sensitive to visible light or infrared light wavelengths. Preferably, the wavelength range to which the photoelectric conversion material of the organic layer 155 is sensitive includes one or more of the wavelength ranges of light emitted by the light-emitting element 110R, the light-emitting element 110G, or the light-emitting element 110B. Alternatively, a photoelectric conversion material that is sensitive to infrared light with a longer wavelength than the wavelength range of light emitted by the light-emitting element 110R may be used. The layer containing the photoelectric conversion material in the organic layer 155 can also be called the active layer or the photoelectric conversion layer.

[0057] In the following, when describing matters common to the light-emitting element 110R, light-emitting element 110G, and light-emitting element 110B, the letters that distinguish them may be omitted, and they may be referred to simply as light-emitting element 110. Similarly, for components that are distinguished by letters, such as organic layer 112R, organic layer 112G, and organic layer 112B, when describing matters common to them, the letters may be omitted and the symbols used may be omitted.

[0058] The organic layer 112 may have one or more of the following in addition to the light-emitting layer: an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer. For example, the organic layer 112 can have a stacked structure of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer from the pixel electrode 111 side. Alternatively, one or more of the hole injection layer, hole transport layer, light-emitting layer, electron transport layer, and electron injection layer may not contain organic compounds, but rather films containing only inorganic compounds or inorganic materials.

[0059] Pixel electrodes 111R, 111G, and 111B (not shown) are provided for each light-emitting element 110. A common electrode 113 is provided as a continuous layer common to each light-emitting element 110 and the light-receiving element 110S. A conductive film that is transparent to visible light is used on either each pixel electrode or the common electrode 113, and a conductive film that is reflective is used on the other. For example, by making each pixel electrode transparent and the common electrode 113 reflective, a bottom-emission type display device can be made, and conversely, by making each pixel electrode reflective and the common electrode 113 transparent, a top-emission type display device can be made. Furthermore, by making both each pixel electrode and the common electrode 113 transparent, a dual-emission type display device can be made. In one aspect of the present invention, a top-emission type or a dual-emission type is preferred.

[0060] The pixel electrode 111 can also have a laminated structure of a reflective conductive film and a translucent conductive film. In this case, it is preferable to provide an organic layer 112 on the reflective conductive film via the translucent conductive film. Furthermore, the thickness of the translucent conductive film may be varied for each light-emitting element.

[0061] Transistors 102R, 102S, 102G, etc., are provided on the substrate 101. An insulating layer 103 is provided covering each transistor 102, and a pixel electrode 111 is provided on the insulating layer 103. The pixel electrode 111R is electrically connected to transistor 102R through an opening provided in the insulating layer 103. Similarly, the pixel electrode 111S is electrically connected to transistor 102S, the pixel electrode 111G is electrically connected to transistor 102G, and the pixel electrode 111B (not shown) is electrically connected to transistor 102B (not shown).

[0062] An insulating layer 131 is provided to cover the ends of the pixel electrodes 111R, 111G, 111B (not shown), and 111S. The ends of the insulating layer 131 are preferably tapered.

[0063] In this specification, a tapered shape refers to a shape in which at least a portion of the side surface of a structure is inclined with respect to the substrate surface. For example, it is preferable to have a region in which the angle between the inclined side surface and the surface to be formed (also called the taper angle) is less than 90°.

[0064] The insulating layer 131 preferably contains an organic resin. By using an organic resin as the insulating layer 131, the adhesion with the organic layer 112 and the organic layer 155 can be improved, and the manufacturing yield can be improved.

[0065] Furthermore, by using an organic resin for the insulating layer 131, its surface can be made gently curved. This improves the coverage of the film formed on the insulating layer 131.

[0066] Examples of materials that can be used for the insulating layer 131 include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimidoamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins.

[0067] Furthermore, an inorganic insulating film can also be used for the insulating layer 131. Using an inorganic insulating film for the insulating layer 131 is more suitable for microfabrication than using an organic resin, and is therefore particularly suitable for manufacturing high-resolution display devices.

[0068] As inorganic insulating materials that can be used for the insulating layer 131, for example, oxides or nitrides such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, aluminum oxide, aluminum oxide nitride, or hafnium oxide can be used. Alternatively, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, and neodymium oxide may also be used. Furthermore, the insulating layer 131 may be a laminate of films containing the above-mentioned inorganic insulating materials.

[0069] The organic layer 112 and the organic layer 155 each have a region in contact with the upper surface of the pixel electrode and a region in contact with the surface of the insulating layer 131. The ends of the organic layer 112 and the organic layer 155 are located on the insulating layer 131.

[0070] A protective layer 121 is provided on the common electrode 113, covering the light-emitting element 110R, light-emitting element 110G, light-receiving element 110S, and light-emitting element 110B (not shown). The protective layer 121 has the function of preventing impurities such as water from diffusing to each light-emitting element 110 from above.

[0071] The protective layer 121 can be, for example, a single-layer structure or a multilayer structure including at least an inorganic insulating film. Examples of inorganic insulating films include oxide films or nitride films such as silicon oxide film, silicon oxide nitride film, silicon oxide nitride film, silicon nitride film, aluminum oxide film, aluminum oxide nitride film, and hafnium oxide film. Alternatively, semiconductor materials or conductive materials such as indium gallium oxide, indium zinc oxide, indium tin oxide, and indium gallium zinc oxide may be used as the protective layer 121.

[0072] A spacer 135 is provided on the protective layer 121. The spacer 135 is provided on the protective layer 121 in the portion that overlaps with the light-receiving element 110S.

[0073] It is preferable that the spacer 135 be made of a material that is transparent to light at least to wavelengths to which the photodetector 110S is sensitive. It is preferable that the spacer 135 is transparent to visible light. The spacer 135 can be made of an organic resin or an inorganic insulating film. In particular, it is preferable to use an organic resin for the spacer 135 because it is easy to increase its thickness.

[0074] Figure 1B shows an example where the spacer 135 is processed into an island shape. The spacer 135 is provided so as to overlap with the pixel electrode 111S via the protective layer 121, the common electrode 113, and the organic layer 155. The ends of the spacer 135 are provided so as to overlap with the insulating layer 131. Figure 1A shows the shape of the outer edge of the spacer 135 with a dashed line.

[0075] In this specification, "island-like" refers to a state in which two or more layers made of the same material and formed in the same process are physically separated. For example, an island-like light-emitting layer refers to a state in which the light-emitting layer and an adjacent light-emitting layer are physically separated.

[0076] A light-shielding layer 136 is provided on the spacer 135. As shown in Figures 1A and 1B, the light-shielding layer 136 has an aperture 130 that overlaps with the light-receiving element 110S. In a plan view, the aperture 130 is located inside the contour of the pixel electrode 111S. Also, in a plan view, the aperture 130 is located inside the contour of the organic layer 155.

[0077] Furthermore, the light-shielding layer 136 covers not only the top surface of the spacer 135 but also its sides. The end of the light-shielding layer 136 opposite to the opening 130 is provided to overlap with the insulating layer 131 via the protective layer 121.

[0078] The light-shielding layer 136 contains a material that absorbs at least a portion of visible light. For example, it contains a material that absorbs at least one of the light emitted by the light-emitting elements 110R, 110G, and 110B. For example, the light-shielding layer 136 itself may be composed of a material that absorbs visible light (e.g., a colored organic or inorganic material), or the light-shielding layer 136 may contain a pigment that absorbs visible light. As the light-shielding layer 136, for example, a resin containing carbon black as a pigment and functioning as a black matrix, or a black thin film such as chromium can be used. Alternatively, a resin that can be used as a color filter that transmits red, blue, or green light and absorbs other light can be used.

[0079] Here, the functions of the spacer 135 and the light-shielding layer 136 will be explained using Figures 2A and 2B. Figures 2A and 2B show a light-receiving element 110S in the center and adjacent light-emitting elements 110G on both sides. Also, an object to be imaged 160 is in contact with the substrate 170. The object to be imaged 160 has irregularities on its surface. The convex parts of the object to be imaged 160 are in contact with the substrate 170, while the concave parts are not. For example, the object to be imaged 160 is a fingertip, and the irregular shape of its surface can be described as a fingerprint. Reflected light 181a, reflected light 181b, and reflected light 181c are reflected light that is reflected by the object to be imaged 160, etc., when the light-emitting elements 110G, etc. are used as a light source, and directed toward the light-receiving element 110S.

[0080] Figure 2B is a schematic cross-sectional view when the spacer 135 and the light-shielding layer 136 are not provided. In Figure 2B, not only the reflected light 181a from the object to be imaged 160 directly above the light-receiving element 110S, but also the reflected light 181b from parts corresponding to different protrusions, and the reflected light 181c from parts corresponding to concave parts of the object to be imaged 160, are incident on the light-receiving element 110S. As a result, blurring may occur in the captured image.

[0081] On the other hand, as shown in Figure 2A, by providing the spacer 135 and the light-shielding layer 136, the reflected light 181b and 181c reflected from an oblique direction toward the photodetector 110S are blocked by the light-shielding layer 136, and only the reflected light 181a from directly above the photodetector 110S can reach the light-receiving area of ​​the photodetector 110S. This makes it possible to clearly photograph the object to be imaged near the surface of the substrate 170. The thicker the spacer 135 and the smaller the aperture diameter of the light-shielding layer 136, the narrower the solid angle of the imaging range can be, and the sharper the image captured can be.

[0082] Furthermore, light 182 guiding the adhesive layer 171 can also be incident on the photodetector 110S. Examples of light 182 include light emitted from the light-emitting element 110G that undergoes total internal reflection at the interface between the adhesive layer 171 and the substrate 170. Such light can be called stray light. Thus, stray light diffusing inside the display device becomes a source of noise when imaging is performed by the photodetector 110S. In other words, the imaging sensitivity (signal-to-noise ratio (S / N ratio)) decreases.

[0083] On the other hand, as shown in Figure 2A, by providing the spacer 135 and the light-shielding layer 136, the light 182 guiding the adhesive layer 171 is blocked by the light-shielding layer 136 and does not reach the light-receiving area of ​​the photodetector 110S. Therefore, the imaging sensitivity can be increased.

[0084] Furthermore, as shown in Figure 2A, by processing the spacer 135 into an island shape and covering its sides with a light-shielding layer 136, it is possible to effectively block light that passes through the spacer 135 from the adhesive layer 171 to the light-receiving element 110S, and light that guides the spacer 135 itself to reach the light-receiving element 110S.

[0085] In the above example, the light-shielding layer 136 is placed only on the light-receiving element 110S, but as shown in Figures 3A and 3B, the light-shielding layer 136 may also be placed on the light-emitting element.

[0086] In Figures 3A and 3B, the light-shielding layer 136 is also placed between the light-emitting element 110 and the light-receiving element 110S, and between adjacent light-emitting elements 110. In other words, the light-shielding layer 136 has an opening that overlaps with the light-emitting element 110 and an opening 130 that overlaps with the light-receiving element 110S. In this case, it is preferable that the diameter (or area) of the opening that overlaps with the light-emitting element 110 be larger than the opening that overlaps with the light-receiving element 110S.

[0087] The following describes an example of a display device configuration that differs in some aspects from the one described above. Note that in the following, parts that overlap with Configuration Example 1-1 above will be denoted by the same reference numerals, and the same explanations will be used for reference, without repeating explanations.

[0088] [Configuration Example 1-2] Figure 4A shows an example where the spacer 135 is not processed into an island shape. The spacer 135 is provided to cover not only the light-receiving element 110S, but also the light-emitting element 110R, light-emitting element 110G, and light-emitting element 110B (not shown).

[0089] This configuration simplifies the process of forming the spacer 135, thereby reducing manufacturing costs.

[0090] Figure 4B shows an example where the light-shielding layer 136 is also placed near the light-emitting element, similar to Figure 3B.

[0091] [Configuration Examples 1-3] Figure 5A shows an example where lens 137 is applied. Lens 137 is a convex lens and is mounted on spacer 135. Lens 137 is also positioned to overlap with the opening of light-shielding layer 136. A portion of light-shielding layer 136 is provided to cover the end of lens 137.

[0092] The lens 137 has the function of increasing the amount of light received by the photodetector 110S by focusing the light that has passed through the aperture 130 of the light-shielding layer 136. Therefore, the sensitivity of imaging can be improved.

[0093] When using lens 137, it is preferable to make the diameter of the aperture 130 of the light-shielding layer 136 larger than the diameter of the light-receiving area of ​​the photodetector 110S, as this effectively increases the amount of light received by the photodetector 110S. In Figure 5A, the diameter (or width) of the light-receiving area of ​​the photodetector 110S corresponds to the aperture diameter (or aperture width) of the insulating layer 131 on the pixel electrode 111S.

[0094] The lens 137 is transparent to light of at least the wavelength received by the photodetector 110S. Furthermore, the lens 137 can be made of a material with a higher refractive index than the adhesive layer 171 for light of the wavelength received by the photodetector 110S. As the lens 137, an organic resin such as acrylic resin can be used.

[0095] Figure 5B shows an example where the light-shielding layer 136 is also placed near the light-emitting element, similar to Figure 3B.

[0096] [Configuration Examples 1-4] Figure 6A shows an example where lens 137 is applied to the above configuration example 1-2.

[0097] Furthermore, Figure 6B shows an example where the light-shielding layer 136 is also placed near the light-emitting element, similar to Figure 3B.

[0098] [Configuration Examples 1-5] Figure 7A shows an example where the lens 138 is provided not only on the light-receiving element 110S but also on the light-emitting element.

[0099] The lens 138 is provided in superimposed on each light-emitting element. By using the lens 138, the light extraction efficiency of the light-emitting elements can be increased, and power consumption can be reduced.

[0100] Lens 137 overlaps with the light-receiving element 110S via spacer 135 and protective layer 121, whereas there is no spacer 135 between lens 138 and protective layer 121. Therefore, the distance between lens 138 and light-emitting element 110 is smaller than the distance between lens 137 and light-receiving element 110S by the thickness of spacer 135.

[0101] Lens 138 can also be formed by processing the same film as lens 137. Lens 138 may be a convex lens or a concave lens. If a concave lens is used, a material with a lower refractive index than the adhesive layer 171 should be used for lens 138.

[0102] Figure 7B shows an example where the spacer 135 is not processed into an island shape, similar to Figure 6A. The lens 138 is mounted on the spacer 135, similar to the lens 137.

[0103] [Configuration Examples 1-6] Figure 8A shows an example where the spacer 135 and the light-shielding layer 136 are formed using a colored layer.

[0104] The configuration shown in Figure 8A has a colored layer 174G instead of spacer 135 and 174R instead of light-shielding layer 136.

[0105] The colored layer 174G functions as a color filter, transmitting green light and absorbing light of other colors. The colored layer 174R also functions as a color filter, transmitting red light and absorbing light of other colors.

[0106] Light incident on the light-receiving surface of the photodetector 110S from a direction perpendicular to it is almost entirely absorbed except for green light when it passes through the colored layer 174G. As a result, only green light is incident on the photodetector 110S.

[0107] The colored layer used as a spacer can be determined according to the wavelength of light used as the light source during imaging and the sensitivity characteristics of the photodetector 110S. Here, an example using a green color filter colored layer 174G is shown, but a red color filter colored layer 174R or a blue color filter colored layer may also be used, or a color filter that transmits light other than visible light (infrared or ultraviolet light) may be used.

[0108] Furthermore, when light incident on the light-receiving surface of the light-receiving element 110S from an oblique direction, almost all light except red light is absorbed when it passes through the colored layer 174R, and the remaining red light is absorbed by the colored layer 174G. In this way, by combining colored layers of different colors, it can be made to function as a light-shielding layer.

[0109] The colored layer used in place of the light-shielding layer 136 can be a color filter of a different color from the colored layer used as a spacer. For example, in the example shown in Figure 8A, since the colored layer 174G is used as a spacer, a color filter that transmits blue light and absorbs other colors of light may be used instead of the colored layer 174R.

[0110] Furthermore, as shown in Figure 8A, it is preferable to provide each colored layer on top of the light-emitting element 110 corresponding to its respective color. The colored layer 174R is provided on the light-emitting element 110R, and the colored layer 174G is provided on the light-emitting element 110G. By providing colored layers on the light-emitting elements, the color purity can be further increased, thereby realizing a display device with high color reproducibility. In addition, by using colored layers, external light reflection can be suppressed, so a configuration that does not require a circular polarizing plate for anti-reflection can be used. Therefore, it is preferable because the light extraction efficiency is increased, not only is the brightness improved, but power consumption is also reduced.

[0111] Figures 8B and 8C show examples where the colored layer is continuous without interruption between each light-emitting element and the light-receiving element 110S.

[0112] As shown in Figure 8B, it is preferable that the colored layer 174G used as a spacer be separated between the light-receiving element 110S and the light-emitting element 110B. If the colored layer 174G is provided continuously between the light-receiving element 110S and the light-emitting element 110B, there is a risk that the light emitted by the light-emitting element 110B will guide through the colored layer 174G and reach the light-receiving element 110S. On the other hand, with respect to the colored layer 174R, even if the light emitted by the light-emitting element 110R guides through the colored layer 174R, it is absorbed by the colored layer 174G on the light-receiving element 110S, so it is not necessary to separate the light-receiving element 110R and the light-receiving element 110S.

[0113] Figure 8C shows a cross-section of the light-emitting element 110B that emits blue light. The light-emitting element 110B has a pixel electrode 111B, an organic layer 112B, and a common electrode 113. The pixel electrode 111B is electrically connected to the transistor 102B through an opening provided in the insulating layer 103. A colored layer 174B, which functions as a blue color filter, is placed on top of the light-emitting element 110B.

[0114] As shown in Figure 8C, on the light-receiving element 110S, a colored layer 174R and a colored layer 174B may be provided on the colored layer 174G, facing each other with the opening 130 in between.

[0115] [Configuration Examples 1-7] Figures 9A, 9B, and 9C show examples of applying a white-emitting light-emitting element to the above configuration example 1-6.

[0116] The light-emitting element 110W has an organic layer 112W between the pixel electrode and the common electrode 113. The organic layer 112W emits white light. The organic layer 112 can be configured to have, for example, two or more light-emitting materials that are complementary in color.

[0117] The region overlapping with the light-emitting element 110W has a colored layer 174R, a colored layer 174G, or a colored layer 174B. This enables full-color display.

[0118] [Configuration Example 2] The following describes an example of a structure obtained by processing an organic layer using photolithography.

[0119] When creating separate EL layers for light-emitting elements of different colors, it is known that these are formed by deposition using a shadow mask such as a fine metal mask (FMM). However, with this method, deviations from the design occur in the shape and position of island-like organic films due to various factors such as the precision of the FMM, the misalignment between the FMM and the substrate, the deflection of the FMM, and the spreading of the contour of the deposited film due to vapor scattering. This makes it difficult to achieve high resolution and high aperture ratio in display devices. Therefore, measures have been taken to artificially increase resolution (also called pixel density) by applying special pixel arrangement methods such as pentile arrangements.

[0120] In fabrication methods using FMMs, to achieve higher resolution and aperture ratios, it is possible to form two adjacent island-shaped organic films so that parts of them overlap. This significantly reduces the distance between light-emitting regions compared to when the two island-shaped organic films are not overlapped. However, when two adjacent island-shaped organic films are formed by overlapping, current leakage may occur between the two adjacent light-emitting elements through the overlapping organic films, resulting in unintended light emission. This can lead to a decrease in brightness and contrast, thus degrading display quality. Furthermore, the leakage current can worsen power efficiency and power consumption.

[0121] Furthermore, if a similar leakage current occurs between the light-emitting element and the photodetector, this leakage current can become a source of noise when imaging with the photodetector, potentially reducing the imaging sensitivity (S / N ratio).

[0122] Therefore, in one aspect of the present invention, part or all of the organic layer located between a pair of electrodes of a light-emitting element, and part or all of the organic layer located between a pair of electrodes of a photodetector, are processed by photolithography. At this time, it is preferable to process the organic layers so that they are separated and do not come into contact with each other between adjacent light-emitting elements and between adjacent light-emitting elements and photodetectors. This makes it possible to interrupt the leakage path of current through the organic layer between light-emitting elements and between light-emitting elements and photodetectors.

[0123] In this way, leakage current (also called side leakage or side leakage current) between the light-emitting element and the photodetector is suppressed, enabling high-precision imaging with a high signal-to-noise ratio. Therefore, clear images can be taken even with weak light. As a result, the brightness of the light-emitting element used as the light source can be reduced during imaging, thus reducing power consumption.

[0124] Furthermore, the leakage path of current can be interrupted between two adjacent light-emitting elements. This allows for increased brightness, enhanced contrast, improved power efficiency, or reduced power consumption.

[0125] Furthermore, it is preferable to form an insulating layer to protect the sides of the organic multilayer film exposed by etching. This can improve the reliability of the display device.

[0126] Between two adjacent light-emitting elements and between adjacent light-emitting elements and a photodetector, there are regions (recesses) where the organic layers of the photodetector and light-emitting elements are not provided. When a common electrode, or a common electrode and common layer, is formed to cover these recesses, a phenomenon called "step breakage" may occur where the common electrode is separated by a step at the edge of the EL layer, and the common electrode on the EL layer may become insulated. Therefore, it is preferable to fill the local step located between two adjacent light-emitting elements with a resin layer that functions as a planarizing film (also called LFP: Local Filling Planarization). This resin layer has the function of a planarizing film. This suppresses step breakage of the common layer or common electrode, and enables the realization of a highly reliable display device.

[0127] If the above-mentioned resin layer is provided in contact with the EL layer, there is a risk that the EL layer may dissolve due to the solvent used during the formation of the resin layer. Therefore, it is preferable to provide an insulating layer to protect the sides of the EL layer between the EL layer and the resin layer. Specifically, it is preferable to provide an inorganic insulating layer at the end of the EL layer, in contact with the sides and top surface of the EL layer, and to provide the resin layer on top of the inorganic insulating layer.

[0128] In this case, it is preferable not to provide a partition wall covering the end of the pixel electrode. If such a partition wall is used, the region of the pixel electrode covered by the partition wall becomes a non-luminescent region, which reduces the aperture ratio. In one aspect of the present invention, by making the end of the pixel electrode tapered, the step coverage of the EL film deposited on the pixel electrode is improved, and it is possible to prevent the EL layer from being divided by the step at the end of the pixel electrode without using a partition wall. This makes it possible to achieve an extremely high aperture ratio.

[0129] Furthermore, a display device can be constructed by combining a white-emitting light-emitting element with a color filter. In this case, the same light-emitting elements can be applied to each of the pixels (sub-pixels) that emit light of different colors, and all layers can be made into a common layer. In addition, part or all of each EL layer can be separated by photolithography. This suppresses leakage current through the common layer, enabling the realization of a display device with high contrast. In particular, in elements having a tandem structure in which multiple light-emitting layers are stacked with a highly conductive intermediate layer in between, leakage current through the intermediate layer can be effectively prevented, thus enabling the realization of a display device that combines high brightness, high resolution, and high contrast.

[0130] [Configuration Example 2-1] Figure 10A shows a schematic cross-sectional view of the display device illustrated below. Figure 10A shows a cross-sectional view including the light-emitting element 110R, the light-emitting element 110G, and the light-receiving element 110S.

[0131] The light-emitting element 110R has a pixel electrode 111R, an organic layer 112R, a common layer 114, and a common electrode 113. The light-emitting element 110G has a pixel electrode 111G, an organic layer 112G, a common layer 114, and a common electrode 113. The light-receiving element 110S has a pixel electrode 111S, an organic layer 155, a common layer 114, and a common electrode 113. The common layer 114 and the common electrode 113 are provided as a continuous layer common to the light-emitting elements 110R, 110G, 110S, and 110B (not shown).

[0132] A conductive layer 161 is provided on the insulating layer 103, and the pixel electrodes 111 of each light-emitting element 110 or light-receiving element 110S are provided on the conductive layer 161. The conductive layer 161 is electrically connected to each transistor 102 through an opening provided in the insulating layer 103. At the connection point between the conductive layer 161 and the transistor 102, a recess is formed on the upper surface of the conductive layer 161, and a planarizing layer 163 is provided to fill this recess. By providing the planarizing layer 163, the portion of the pixel electrode 111 that overlaps with the connection point can also be made flat, so that it can be used as the light-emitting region of the light-emitting element or the light-receiving region of the light-receiving element.

[0133] The organic layer 112 and the common layer 114 can each independently have one or more of the following: an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer. For example, the organic layer 112 can have a stacked structure of a hole injection layer, a hole transport layer, an emissive layer, and an electron transport layer from the pixel electrode 111 side, and the common layer 114 can have an electron injection layer. For example, the common layer 114 can also be a film that does not contain an organic compound, but only an inorganic compound or inorganic material.

[0134] Figure 10A shows an example where an insulating layer 131 covering the end of the pixel electrode 111 is not provided. Since the organic layer 112 or organic layer 155 has a portion that covers the end of the pixel electrode 111, it is preferable that the end of the pixel electrode 111 has a tapered shape.

[0135] Organic layers 112 and 155 are processed into island shapes by photolithography. As a result, at their edges, organic layers 112 and 155 have an angle of nearly 90 degrees between the top surface and the side surface. On the other hand, organic films formed using FMM (Fine Metal Mask) or the like tend to gradually thin out towards the edges. For example, the top surface is formed in a slope shape over a range of 1 μm to 10 μm up to the edge, making it difficult to distinguish between the top surface and the side surface. It is preferable that organic layers 112 and 155 are processed to have a region where the angle (taper angle) between the side surface and the bottom surface is 10 degrees to 120 degrees, preferably 30 degrees to 110 degrees, more preferably 45 degrees to 100 degrees, and even more preferably 60 degrees to 95 degrees. The smaller the taper angle, the shorter the distance from the edge of the pixel electrode 111 to the edge of the organic layer 112 or organic layer 155, thereby enabling the realization of a higher-resolution display device.

[0136] An insulating layer 125 and a resin layer 126 are provided between the adjacent light-emitting element 110 and the light-receiving element 110S. Figure 10B shows a magnified view of a part of the light-emitting element 110R, a part of the light-receiving element 110S, and the region between them.

[0137] Between the adjacent light-emitting element 110 and light-receiving element 110S, the side surfaces of the organic layer 112 and the organic layer 155 are arranged facing each other with a resin layer 126 in between. The resin layer 126 has a smooth upper surface shape, and a common layer 114 and a common electrode 113 are provided covering the upper surface of the resin layer 126.

[0138] The resin layer 126 functions as a planarizing film to mitigate the step at the edge of the organic layer 112 or organic layer 155. By providing the resin layer 126, it is possible to prevent the common electrode 113 from being separated by the step in the organic layer 112 or organic layer 155 (also called step breakage), and to prevent the common electrode on the organic layer 112 or organic layer 155 from becoming insulated. The resin layer 126 can also be called an LFP (Local Filling Planarization) layer.

[0139] As the resin layer 126, an insulating layer having an organic material can be suitably used. For example, as the resin layer 126, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimidoamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins can be used. Alternatively, as the resin layer 126, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used.

[0140] Furthermore, a photosensitive resin can be used as the resin layer 126. A photoresist may be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0141] The resin layer 126 may contain a material that absorbs visible light. For example, the resin layer 126 itself may be composed of a material that absorbs visible light, or the resin layer 126 may contain a pigment that absorbs visible light. As the resin layer 126, for example, a resin that can be used as a color filter that transmits red, blue, or green light and absorbs other light, or a resin that contains carbon black as a pigment and functions as a black matrix can be used.

[0142] The insulating layer 125 is provided in contact with the side surfaces of the organic layer 112 and the organic layer 155. Furthermore, the insulating layer 125 covers the upper ends of the organic layer 112 and the organic layer 155. A portion of the insulating layer 125 is also provided in contact with the upper surface of the insulating layer 103.

[0143] The insulating layer 125 is located between the organic layer 112 or organic layer 155 and the resin layer 126, and functions as a protective layer to prevent the resin layer 126 from coming into contact with the organic layer 112 or organic layer 155. If the organic layer 112 or organic layer 155 comes into contact with the resin layer 126, the organic layer 112 or organic layer 155 may dissolve due to organic solvents used during the formation of the resin layer 126. Therefore, by providing such an insulating layer 125, it is possible to protect the sides of the organic layer. In addition, the insulating layer 125 prevents the sides of the organic layer 112 or organic layer 155 from being exposed to the atmosphere. This makes it possible to manufacture highly reliable light-emitting and light-receiving elements.

[0144] The insulating layer 125 can be an insulating layer having an inorganic material. For example, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films can be used for the insulating layer 125. The insulating layer 125 may be a single layer or a laminated structure. Examples of oxide insulating films include silicon oxide film, aluminum oxide film, magnesium oxide film, indium gallium zinc oxide film, gallium oxide film, germanium oxide film, yttrium oxide film, zirconium oxide film, lanthanum oxide film, neodymium oxide film, hafnium oxide film, and tantalum oxide film. Examples of nitride insulating films include silicon nitride film and aluminum nitride film. Examples of oxidative nitride insulating films include silicon oxidative nitride film and aluminum oxidative nitride film. Examples of nitride oxide insulating films include silicon nitride oxide film and aluminum nitride oxide film. In particular, by applying an oxide metal film such as an aluminum oxide film or hafnium oxide film formed by the ALD method, or an inorganic insulating film such as a silicon oxide film, to the insulating layer 125, an insulating layer 125 with fewer pinholes and excellent function in protecting the EL layer can be formed.

[0145] In this specification, the term "oxide-nitride" refers to a material in which the oxygen content is greater than the nitrogen content, and the term "nitride oxide" refers to a material in which the nitrogen content is greater than the oxygen content. For example, when "silicon oxynitride" is written, it refers to a material in which the oxygen content is greater than the nitrogen content, and when "silicon nitride oxide" is written, it refers to a material in which the nitrogen content is greater than the oxygen content.

[0146] The insulating layer 125 can be formed using sputtering, CVD, PLD, ALD, or other methods. It is preferable to form the insulating layer 125 using the ALD method, which provides good coverage.

[0147] At the upper end of the organic layer 112 or organic layer 155, the resin layer 126 is provided covering the upper surface of the organic layer 112 or organic layer 155. Furthermore, layer 128 and insulating layer 125 are laminated in this order between the upper surface of the organic layer 112 or organic layer 155 and the resin layer 126. Layer 128 is provided in contact with the upper surface of the organic layer 112.

[0148] Layer 128 is a portion of the protective layer (also called a mask layer or sacrificial layer) that remains after etching the organic layer 112 or organic layer 155. The material used for layer 128 can be the same material used for the insulating layer 125. In particular, using the same material for both layer 128 and the insulating layer 125 is preferable because it allows for the use of common processing equipment.

[0149] In particular, metal oxide films such as aluminum oxide films and hafnium oxide films, or inorganic insulating films such as silicon oxide films, formed by the ALD method have few pinholes. Therefore, by applying them as layer 128, an insulating layer 125 with excellent function in protecting the EL layer can be formed.

[0150] In particular, it is preferable to use an insulating film that can be processed by wet etching for layer 128. Since layer 128 is a film in contact with the upper surface of the organic layer 112, using wet etching, which causes less damage to the surface to be formed, when processing it can improve the reliability of the light-emitting element 110 and the light-receiving element 110S.

[0151] A protective layer 121 is provided to cover the common electrode 113, and a spacer 135 and a light-shielding layer 136 are provided on the protective layer 121. For details on the protective layer 121, spacer 135, and light-shielding layer 136, please refer to the description in Configuration Example 1.

[0152] [Configuration Example 2-2] Figures 11A and 11B show examples of the configuration illustrated in Figure 10A with the lens 137 applied.

[0153] As explained in Configuration Example 1-3, when using the lens 137, it is preferable to make the diameter of the aperture 130 of the light-shielding layer 136 larger than the diameter of the light-receiving area of ​​the photodetector 110S. In Configuration Example 1-3, the diameter of the aperture of the photodetector 110S could be controlled by the diameter of the aperture of the insulating layer 131, but in this configuration, since the insulating layer 131 is not used, the light-receiving area of ​​the photodetector 110S corresponds to the diameter of the pixel electrode 111S, or the aperture diameter of the resin layer 126, insulating layer 125, or layer 128.

[0154] Figure 11A shows an example where the light-receiving area of ​​the photodetector 110S is smaller than the light-emitting area of ​​the light-emitting element 110. This makes it possible to increase the aperture ratio (effective light-emitting area ratio) of the light-emitting element and improve reliability.

[0155] Figure 11B shows an example where the diameter of the light-receiving area of ​​the photodetector 110S is narrowed and the width of the resin layer 126 is increased, compared to Figure 10A. This allows the distance between the photodetector 110S and the adjacent light-emitting element to be increased, and therefore the diameter of the lens 137 can be increased. As a result, the amount of light received by the photodetector 110S can be increased.

[0156] Figure 11C shows an example where the configuration shown in Figure 11B is further modified by adding a lens 138 to the light-emitting element 110.

[0157] [Configuration Example 2-3] Figure 12A shows an example in which the spacer 135 and the light-shielding layer 136 are composed of a colored layer 174R, a colored layer 174G, etc.

[0158] Furthermore, Figure 12B shows an example where a white light-emitting element 110W is applied to the light-emitting element in Figure 12A.

[0159] Thus, forming the spacer 135 and the light-shielding layer 136 with a colored layer is preferable because it allows for countermeasures against stray light reaching the photodetector 110S and improvement of image clarity without increasing the number of steps.

[0160] The above is an explanation of the example configuration.

[0161] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., can be appropriately combined with other configuration examples or drawings, etc., at least in part.

[0162] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0163] (Embodiment 2) This embodiment describes an example of the configuration of a display device according to one aspect of the present invention. Here, it is described as a display device capable of displaying images, but by using a light-emitting element as a light source, it can be used as an imaging device.

[0164] Furthermore, the display device of this embodiment can be a high-resolution display device or a large-screen display device. Therefore, the display device of this embodiment can be used in electronic devices with relatively large screens, such as television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, smartphones, smartwatches, tablet devices, personal digital assistants, and audio playback devices.

[0165] [Display device 400] Figure 13 shows a perspective view of the display device 400, and Figure 14A shows a cross-sectional view of the display device 400.

[0166] The display device 400 has a configuration in which substrate 452 and substrate 451 are bonded together. In Figure 13, substrate 452 is clearly indicated by a dashed line.

[0167] The display device 400 includes a display unit 462, a circuit 464, wiring 465, etc. Figure 13 shows an example in which IC 473 and FPC 472 are mounted on the display device 400. Therefore, the configuration shown in Figure 14 can also be described as a display module having the display device 400, an IC (integrated circuit), and an FPC.

[0168] For example, a scan line drive circuit can be used as circuit 464.

[0169] Wiring 465 has the function of supplying signals and power to the display unit 462 and the circuit 464. These signals and power are input to wiring 465 from an external source via FPC 472 or from IC 473.

[0170] Figure 13 shows an example in which IC 473 is provided on the substrate 451 using a COG (Chip On Glass) method or COF (Chip On Film) method. IC 473 can be an IC having, for example, a scan line drive circuit or a signal line drive circuit. Note that the display device 400 and the display module may be configured without an IC. Alternatively, the IC may be mounted on an FPC using a COF method or the like.

[0171] Figure 14A shows an example of a cross-section of the display device 400 when a portion of the area including the FPC 472, a portion of the circuit 464, a portion of the display unit 462, and a portion of the area including the connection portion are cut. In Figure 14A, an example of a cross-section is shown when a portion of the display unit 462 is cut, specifically when a portion including the light-emitting element 430b that emits green light (G) and the light-receiving element 440 that receives reflected light (L) is cut.

[0172] The display device 400 shown in Figure 14A has transistors 252, 260, 258, light-emitting element 430b, and light-receiving element 440 between substrates 451 and 452.

[0173] The light-emitting element 430b and the light-receiving element 440 can be the light-emitting element or light-receiving element exemplified above.

[0174] Here, if the pixels of the display device have three types of subpixels, each having a light-emitting element with a different emission color, examples of these three subpixels include subpixels of three colors: red (R), green (G), and blue (B); and subpixels of three colors: yellow (Y), cyan (C), and magenta (M). If there are four such subpixels, examples of these four subpixels include subpixels of four colors: R, G, B, and white (W); and subpixels of four colors: R, G, B, and Y. Alternatively, the subpixels may be equipped with light-emitting elements that emit infrared light.

[0175] Furthermore, the photodetector 440 can be a photoelectric conversion element sensitive to light in the red, green, or blue wavelength range, or a photoelectric conversion element sensitive to light in the infrared wavelength range.

[0176] The substrate 452 and the protective layer 416 are bonded together via an adhesive layer 442. The adhesive layer 442 is provided in overlapping place with the light-emitting element 430b and the light-receiving element 440, and a solid encapsulation structure is applied to the display device 400.

[0177] The light-emitting element 430b and the light-receiving element 440 have conductive layers 411a, 411b, and 411c as pixel electrodes. Conductive layer 411b is reflective to visible light and functions as a reflective electrode. Conductive layer 411c is transparent to visible light and functions as an optical adjustment layer.

[0178] The conductive layer 411a of the light-emitting element 430b is connected to the conductive layer 272b of the transistor 260 through an opening provided in the insulating layer 294. The transistor 260 has the function of controlling the driving of the light-emitting element. On the other hand, the conductive layer 411a of the photodetector element 440 is electrically connected to the conductive layer 272b of the transistor 258. The transistor 258 has the function of controlling the exposure timing using the photodetector element 440.

[0179] An organic layer 412G or organic layer 412S is provided covering the pixel electrode. An insulating layer 421 is provided in contact with the side surface of the organic layer 412G and the side surface of the organic layer 412S, respectively, and a resin layer 422 is provided on the insulating layer 421. An organic layer 414, a common electrode 413, and a protective layer 416 are provided covering the organic layer 412G and the organic layer 412S. By providing a protective layer 416 that covers the light-emitting element, it is possible to suppress the entry of impurities such as water into the light-emitting element and improve the reliability of the light-emitting element. A spacer 418 is provided on the protective layer 416 so as to cover the light-receiving element 440, and a light-shielding layer 417 with an opening is provided covering the top and side surfaces of the spacer 418.

[0180] The light G emitted by the light-emitting element 430b is emitted towards the substrate 452. The light-receiving element 440 receives the light L incident through the substrate 452 and converts it into an electrical signal. It is preferable to use a material with high transmittance to visible light for the substrate 452.

[0181] Transistors 252, 260, and 258 are all formed on the substrate 451. These transistors can be manufactured using the same materials and processes.

[0182] Furthermore, transistors 252, 260, and 258 may be manufactured to have different configurations. For example, transistors may be manufactured with or without a back gate, or transistors may be manufactured with different materials or thicknesses for the semiconductor, gate electrode, gate insulating layer, source electrode, and drain electrode, or both.

[0183] The substrate 451 and the insulating layer 262 are bonded together by an adhesive layer 455.

[0184] The method for manufacturing the display device 400 involves first bonding a fabricated substrate, on which an insulating layer 262, transistors, light-emitting elements, and light-receiving elements are provided, to a substrate 452 on which a light-shielding layer 417 is provided, using an adhesive layer 442. Then, the fabricated substrate is peeled off and a substrate 451 is attached to the exposed surface, thereby transferring the components formed on the fabricated substrate to the substrate 451. It is preferable that both the substrate 451 and the substrate 452 are flexible. This increases the flexibility of the display device 400.

[0185] A connection portion 254 is provided in the region of substrate 451 that does not overlap with substrate 452. At the connection portion 254, wiring 465 is electrically connected to FPC 472 via a conductive layer 466 and a connecting layer 292. The conductive layer 466 can be obtained by processing the same conductive film as the pixel electrode. This allows the connection portion 254 and FPC 472 to be electrically connected via the connecting layer 292.

[0186] Transistors 252, 260, and 258 each have a conductive layer 271 that functions as a gate, an insulating layer 261 that functions as a gate insulating layer, a semiconductor layer 281 having a channel forming region 281i and a pair of low-resistance regions 281n, a conductive layer 272a connected to one of the pair of low-resistance regions 281n, a conductive layer 272b connected to the other of the pair of low-resistance regions 281n, an insulating layer 275 that functions as a gate insulating layer, a conductive layer 273 that functions as a gate, and an insulating layer 265 covering the conductive layer 273. The insulating layer 261 is located between the conductive layer 271 and the channel forming region 281i. The insulating layer 275 is located between the conductive layer 273 and the channel forming region 281i.

[0187] The conductive layer 272a and the conductive layer 272b are each connected to the low-resistance region 281n via openings provided in the insulating layer 265. Of the conductive layer 272a and the conductive layer 272b, one functions as a source and the other functions as a drain.

[0188] Figure 14A shows an example in which the insulating layer 275 covers the top and sides of the semiconductor layer. The conductive layer 272a and conductive layer 272b are connected to the low-resistance region 281n through openings provided in the insulating layer 275 and insulating layer 265, respectively.

[0189] On the other hand, in the transistor 259 shown in Figure 14B, the insulating layer 275 overlaps with the channel formation region 281i of the semiconductor layer 281, but does not overlap with the low-resistance region 281n. For example, the structure shown in Figure 14B can be fabricated by processing the insulating layer 275 using the conductive layer 273 as a mask. In Figure 14B, an insulating layer 265 is provided covering the insulating layer 275 and the conductive layer 273, and the conductive layers 272a and 272b are connected to the low-resistance region 281n, respectively, through openings in the insulating layer 265. Furthermore, an insulating layer 268 covering the transistor may also be provided.

[0190] The transistor structure of the display device of this embodiment is not particularly limited. For example, planar transistors, staggered transistors, inverse staggered transistors, etc., can be used. Furthermore, either a top-gate or bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0191] Transistors 252, 260, and 258 are configured in which a semiconductor layer on which a channel is formed is sandwiched between two gates. The transistors may be driven by connecting the two gates and supplying them with the same signal. Alternatively, the threshold voltage of the transistors may be controlled by applying a potential to control the threshold voltage to one of the two gates and a potential to drive the other gate.

[0192] The crystallinity of the semiconductor material used in the semiconductor layer of the transistor is not particularly limited; amorphous semiconductors, single-crystal semiconductors, or semiconductors with crystalline properties other than single crystals (microcrystalline semiconductors, polycrystalline semiconductors, or semiconductors having crystalline regions in part) may be used. Using a single-crystal semiconductor or a semiconductor with crystalline properties is preferable because it can suppress the degradation of transistor characteristics.

[0193] The semiconductor layer of the transistor preferably has a metal oxide (also called an oxide semiconductor). In other words, the display device of this embodiment preferably uses a transistor (hereinafter referred to as an OS transistor) that uses a metal oxide in the channel formation region.

[0194] The band gap of the metal oxide used in the semiconductor layer of the transistor is preferably 2 eV or more, and more preferably 2.5 eV or more. By using a metal oxide with a large band gap, the off-current of the OS transistor can be reduced.

[0195] The metal oxide preferably contains at least indium or zinc, and more preferably indium and zinc. For example, the metal oxide preferably contains indium, M (where M is one or more selected from gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc. In particular, M is preferably one or more selected from gallium, aluminum, yttrium, and tin, and gallium is more preferred. A metal oxide containing indium, M, and zinc may hereafter be referred to as In-M-Zn oxide.

[0196] For example, positories using In-Ga-Zn oxide, In-Sn-Zn oxide, or Sn-containing In-Ga-Zn oxide.

[0197] Alternatively, the semiconductor layer of the transistor may contain silicon. Examples of silicon include amorphous silicon and crystalline silicon (such as low-temperature polysilicon (also known as LTPS) and single-crystal silicon).

[0198] Low-temperature polysilicon, in particular, has relatively high mobility and can be formed on a glass substrate, making it suitable for use in display devices. For example, transistors using low-temperature polysilicon as the semiconductor layer (LTPS transistors) can be applied to transistors 252 in the drive circuit, while transistors using oxide semiconductors as the semiconductor layer (OS transistors) can be applied to transistors 260 and 258 provided in the pixels. By using both LTPS transistors and OS transistors, a display device with low power consumption and high driving capability can be realized. Furthermore, a configuration combining LTPS transistors and OS transistors is sometimes referred to as LTPO. In addition, a more preferable example is to apply OS transistors to transistors that function as switches to control conduction and non-conductivity between wiring, and to apply LTPS transistors to transistors that control current.

[0199] The display device shown in Figure 14A has an OS transistor and a configuration in which the organic layers between light-emitting elements are separated. This configuration makes it possible to extremely low leakage current that can flow through the transistor, leakage current that can flow between adjacent light-emitting elements, and leakage current that flows between adjacent light-emitting elements and photodetectors (also called lateral leakage current or side leakage current). Furthermore, with this configuration, when an image is displayed on the display device, the observer can observe one or more of the following: image sharpness, image clarity, high saturation, and high contrast ratio. Moreover, by having an extremely low leakage current that can flow through the transistor and lateral leakage current between light-emitting elements, it is possible to achieve a display (also called true black display) with as little light leakage (so-called black floating) that can occur when displaying black as possible.

[0200] The transistors in circuit 464 and the transistors in display unit 462 may have the same structure or different structures. The structures of the multiple transistors in circuit 464 may all be the same or there may be two or more different structures. Similarly, the structures of the multiple transistors in display unit 462 may all be the same or there may be two or more different structures.

[0201] It is preferable to use a material that does not easily allow impurities such as water and hydrogen to diffuse into at least one layer of the insulating layer covering the transistor. This allows the insulating layer to function as a barrier layer. With such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby improving the reliability of the display device.

[0202] It is preferable to use an inorganic insulating film for insulating layer 261, insulating layer 262, insulating layer 265, insulating layer 268, and insulating layer 275. Examples of inorganic insulating films that can be used include silicon nitride film, silicon oxynitride film, silicon oxide film, silicon nitride film, aluminum oxide film, and aluminum nitride film. Alternatively, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film may also be used. Furthermore, two or more of the above-mentioned inorganic insulating films may be laminated together.

[0203] Here, organic insulating films often have lower barrier properties than inorganic insulating films. Therefore, it is preferable that the organic insulating film has an opening near the edge of the display device 400. This prevents impurities from entering through the organic insulating film from the edge of the display device 400. Alternatively, the organic insulating film may be formed so that its edge is inside the edge of the display device 400, so that the organic insulating film is not exposed at the edge of the display device 400.

[0204] An organic insulating film is preferred for the insulating layer 294, which functions as a planarizing layer. Examples of materials that can be used as the organic insulating film include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimidoamide resins, siloxane resins, benzocyclobutene resins, phenolic resins, and precursors of these resins.

[0205] It is preferable to provide a light-shielding layer 417 on the surface of the substrate 452 that faces the substrate 451. Various optical components can also be arranged on the outside of the substrate 452. Examples of optical components include polarizing plates, phase difference plates, light diffusion layers (such as diffusion films), anti-reflective layers, and light-collecting films. Furthermore, an antistatic film to suppress the adhesion of dust, a water-repellent film to make it difficult for dirt to adhere, a hard coat film to suppress the occurrence of scratches during use, and an impact-absorbing layer may also be arranged on the outside of the substrate 452.

[0206] Figure 14A shows the connection section 278. At the connection section 278, the common electrode 413 and the wiring are electrically connected. Figure 14A shows an example where the same stacked structure as the pixel electrode is applied as the wiring.

[0207] Substrates 451 and 452 can be made of glass, quartz, ceramics, sapphire, resin, metal, alloy, semiconductor, etc., respectively. The substrate on the side that extracts light from the light-emitting element should be made of a material that transmits the light. Using flexible materials for substrates 451 and 452 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used as substrate 451 or substrate 452.

[0208] Substrates 451 and 452 can be made from polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. One or both of substrates 451 and 452 may be made of glass of a thickness sufficient to provide flexibility.

[0209] Furthermore, when a circular polarizing plate is superimposed on a display device, it is preferable to use a substrate with high optical isotropy for the substrate of the display device. A substrate with high optical isotropy has low birefringence (or a small amount of birefringence).

[0210] For substrates with high optical isotropy, the absolute value of the retardation (phase difference) is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0211] Examples of films with high optical isotropy include triacetylcellulose (TAC, also known as cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic film.

[0212] Furthermore, when using a film as the substrate, the film may absorb water, potentially causing wrinkles or other shape changes in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferable to use a film with a water absorption rate of 0.1% or less, and even more preferable to use a film with a water absorption rate of 0.01% or less.

[0213] Various types of curing adhesives can be used as the adhesive layer, including UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Adhesive sheets may also be used.

[0214] As the connecting layer 292, an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), etc., can be used.

[0215] Materials that can be used for conductive layers such as the gate, source, and drain of transistors, as well as various wirings and electrodes that constitute display devices, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, as well as alloys mainly composed of these metals. Films containing these materials can be used as single layers or in a multilayer structure.

[0216] Furthermore, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene can be used as the light-transmitting conductive material. Alternatively, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metallic materials, can be used. Alternatively, nitrides of such metallic materials (e.g., titanium nitride) may be used. When using metallic materials or alloy materials (or their nitrides), it is preferable to make them thin enough to be light-transmitting. In addition, a laminated film of the above materials can be used as a conductive layer. For example, using a laminated film of a silver-magnesium alloy and indium tin oxide is preferable because it can enhance conductivity. These can also be used for conductive layers of various wirings and electrodes that constitute a display device, and for conductive layers of light-emitting elements (conductive layers that function as pixel electrodes or common electrodes).

[0217] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, and aluminum oxide.

[0218] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., can be appropriately combined with other configuration examples or drawings, etc., at least in part.

[0219] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0220] (Embodiment 3) This embodiment describes a display device according to one aspect of the present invention.

[0221] A display device according to one aspect of the present invention has a light-receiving element (also called a light-receiving device) and a light-emitting element (also called a light-emitting device). Alternatively, a display device according to one aspect of the present invention may have a configuration that includes a light-receiving element (also called a light-receiving device) and a light-emitting element.

[0222] First, a display device having a light-receiving element and a light-emitting element will be described.

[0223] A display device according to one aspect of the present invention has a light-receiving unit with a light-receiving element and a light-emitting element. In this aspect of the display device, the light-emitting element is arranged in a matrix in the light-receiving unit, and the light-receiving unit can display an image. Furthermore, the light-receiving unit also has a light-receiving element arranged in a matrix, and the light-receiving unit has either an imaging function or a sensing function, or both. The light-receiving unit can be used as an image sensor, a touch sensor, etc. That is, by detecting light in the light-receiving unit, it is possible to capture an image or detect touch operations of an object (finger, pen, etc.). Moreover, in this aspect of the display device, the light-emitting element can be used as a light source for a sensor. Therefore, it is not necessary to provide a separate light-receiving unit and light source from the display device, and the number of components in the electronic device can be reduced.

[0224] In one embodiment of the present invention, when an object reflects (or scatters) the light emitted by the light-emitting element of the light-receiving unit, the light-receiving element can detect the reflected light (or scattered light), making it possible to perform tasks such as image capture and touch operation detection even in dark places.

[0225] A light-emitting element in a display device according to one aspect of the present invention functions as a display element (also called a display device).

[0226] It is preferable to use EL elements (also called EL devices) such as OLEDs and QLEDs as light-emitting elements. Examples of light-emitting materials for EL elements include fluorescent materials, phosphorescent materials, and thermally activated delayed fluorescence (TADF) materials. Not only organic compounds but also inorganic compounds (such as quantum dot materials) can be used as light-emitting materials for EL elements. In addition, LEDs such as microLEDs can also be used as light-emitting elements.

[0227] A display device according to one aspect of the present invention has the function of detecting light using a light-receiving element.

[0228] When a light-receiving element is used as an image sensor, a display device can capture an image using the light-receiving element. For example, the display device can be used as a scanner.

[0229] An electronic device to which a display device according to one aspect of the present invention is applied can acquire data related to biometric information such as fingerprints and palm prints using its function as an image sensor. In other words, a biometric authentication sensor can be built into the display device. By having the biometric authentication sensor built into the display device, the number of components in the electronic device can be reduced compared to when a separate biometric authentication sensor is provided for the display device, making it possible to miniaturize and lighten the electronic device.

[0230] Furthermore, when a light-receiving element is used as a touch sensor, the display device can use the light-receiving element to detect touch operations on the object.

[0231] For example, a pn-type or pin-type photodiode can be used as the light-receiving element. The light-receiving element functions as a photoelectric conversion element (also called a photoelectric conversion device) that detects light incident on it and generates an electric charge. The amount of charge generated from the light-receiving element is determined by the amount of light incident on it.

[0232] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving element. Organic photodiodes can be easily made thinner, lighter, and larger in area, and because they offer a high degree of freedom in shape and design, they can be applied to a variety of devices.

[0233] In one aspect of the present invention, an organic EL element (also called an organic EL device) is used as a light-emitting element, and an organic photodiode is used as a light-receiving element. The organic EL element and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated into a display device using an organic EL element.

[0234] If all the layers constituting an organic EL element and an organic photodiode were to be fabricated separately, the number of film deposition steps would become enormous. However, since organic photodiodes have many layers that can share the same configuration as organic EL elements, the increase in film deposition steps can be suppressed by depositing these common layers in a single batch.

[0235] For example, one of a pair of electrodes (the common electrode) can be a common layer for both the photodetector and the light-emitting element. Alternatively, at least one of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer may be a common layer for both the photodetector and the light-emitting element. By having a common layer for both the photodetector and the light-emitting element in this way, the number of film deposition cycles and masks can be reduced, thereby reducing the manufacturing process and cost of the display device. Furthermore, a display device having a photodetector can be manufactured using existing manufacturing equipment and methods for display devices.

[0236] Next, a display device having a light-emitting / receiving element and a light-emitting element will be described. Note that explanations of functions, operations, and effects similar to those described above may be omitted.

[0237] In a display device according to one aspect of the present invention, subpixels exhibiting one of the colors have a light-receiving light-emitting element instead of a light-emitting element, while subpixels exhibiting other colors have a light-emitting element. The light-receiving light-emitting element has both a light-emitting function and a light-receiving function. For example, if a pixel has three subpixels, a red subpixel, a green subpixel, and a blue subpixel, at least one subpixel has a light-receiving light-emitting element, and the other subpixels have light-emitting elements. Therefore, the light-receiving and light-emitting section of the display device according to one aspect of the present invention has the function of displaying an image using both light-receiving and light-emitting elements and light-emitting elements.

[0238] By having the light-emitting element serve as both a light-emitting element and a light-receiving element, it is possible to add a light-receiving function to a pixel without increasing the number of subpixels included in the pixel. This makes it possible to add either or both an imaging function and a sensing function to the light-emitting section of a display device while maintaining the aperture ratio of the pixel (aperture ratio of each subpixel) and the resolution of the display device. Therefore, in one embodiment of the present invention, the aperture ratio of the pixel can be increased and high resolution can be easily achieved compared to a case in which subpixels having light-receiving elements are provided separately from subpixels having light-emitting elements.

[0239] In one embodiment of the present invention, a display device has a light-receiving unit in which light-receiving and light-emitting elements are arranged in a matrix, and an image can be displayed in the light-receiving unit. The light-receiving unit can also be used as an image sensor, a touch sensor, etc. In one embodiment of the present invention, the light-emitting elements can be used as a light source for a sensor. Therefore, imaging and detection of touch operations are possible even in dark places.

[0240] Light-emitting and receiving devices can be fabricated by combining organic EL elements and organic photodiodes. For example, a light-emitting and receiving device can be fabricated by adding an active layer of an organic photodiode to the stacked structure of an organic EL element. Furthermore, when fabricating a light-emitting and receiving device by combining an organic EL element and an organic photodiode, the number of film deposition steps can be suppressed by depositing layers that can share a common structure with the organic EL element in a single process.

[0241] For example, one of a pair of electrodes (the common electrode) can be a layer common to both the light-receiving and light-emitting elements. Alternatively, at least one of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer may be a layer common to both the light-receiving and light-emitting elements.

[0242] Furthermore, the function of the layers in a light-receiving element may differ depending on whether the element functions as a light-receiving element or as a light-emitting element. In this specification, the components are referred to based on their function when the element functions as a light-emitting element.

[0243] The display device of this embodiment has the function of displaying an image using a light-emitting element and a light-receiving element. In other words, the light-emitting element and the light-receiving element function as display elements.

[0244] The display device of this embodiment has the function of detecting light using a light-receiving element. The light-receiving element can detect light with a shorter wavelength than the light it emits itself.

[0245] When the light-emitting element is used as an image sensor, the display device of this embodiment can capture an image using the light-emitting element. Furthermore, when the light-emitting element is used as a touch sensor, the display device of this embodiment can detect touch operations on an object using the light-emitting element.

[0246] The light-receiving element functions as a photoelectric conversion element. The light-receiving element can be fabricated by adding an active layer of a light-receiving element to the configuration of the light-receiving element described above. For example, the active layer of a pn-type or pin-type photodiode can be used for the light-receiving element.

[0247] In particular, it is preferable to use an organic photodiode with an active layer containing an organic compound as the light-emitting and receiving element. Organic photodiodes can be easily made thinner, lighter, and larger in area, and because they offer a high degree of freedom in shape and design, they can be applied to a variety of devices.

[0248] In the following section, a display device, which is an example of a display device according to one aspect of the present invention, will be described in more detail with reference to the drawings.

[0249] [Example of display device configuration 1] [Configuration Example 1-1] Figure 15A shows a schematic diagram of the display panel 200. The display panel 200 includes a substrate 201, a substrate 202, a light-receiving element 212, a light-emitting element 211R, a light-emitting element 211G, a light-emitting element 211B, a functional layer 203, and the like.

[0250] The light-emitting elements 211R, 211G, 211B, and 212 are located between substrates 201 and 202. The light-emitting elements 211R, 211G, and 211B emit red (R), green (G), or blue (B) light, respectively. In the following, when light-emitting elements 211R, 211G, and 211B are not distinguished, they may be referred to simply as "light-emitting element 211."

[0251] The display panel 200 has a plurality of pixels arranged in a matrix. Each pixel has one or more subpixels. Each subpixel has one light-emitting element. For example, a pixel can have a configuration with three subpixels (three colors: R, G, B, or three colors: yellow (Y), cyan (C), and magenta (M)), or a configuration with four subpixels (four colors: R, G, B, and white (W), or four colors: R, G, B, and Y). Furthermore, each pixel has a light-receiving element 212. The light-receiving element 212 may be provided in all pixels or in some pixels. Also, a single pixel may have multiple light-receiving elements 212.

[0252] Figure 15A shows how a finger 220 touches the surface of the substrate 202. A portion of the light emitted by the light-emitting element 211G is reflected at the contact point between the substrate 202 and the finger 220. A portion of the reflected light is then incident on the light-receiving element 212, allowing detection that the finger 220 has touched the substrate 202. In other words, the display panel 200 can function as a touch panel.

[0253] The functional layer 203 includes circuits for driving the light-emitting elements 211R, 211G, and 211B, and a circuit for driving the light-receiving element 212. The functional layer 203 is provided with switches, transistors, capacitors, wiring, etc. However, when the light-emitting elements 211R, 211G, 211B, and the light-receiving element 212 are driven in a passive matrix manner, the configuration may be made without switches, transistors, etc.

[0254] The display panel 200 preferably has a function to detect the fingerprint of the finger 220. Figure 15B schematically shows an enlarged view of the contact area when the finger 220 is in contact with the substrate 202. Figure 15B also shows alternately arranged light-emitting elements 211 and light-receiving elements 212.

[0255] Fingerprints are formed on finger 220 by recesses and protrusions. Therefore, as shown in Figure 15B, the protrusions of the fingerprints are in contact with the substrate 202.

[0256] Light reflected from a surface or interface can be either specular or diffuse. Specularly reflected light is highly directional, with the angle of incidence and the angle of reflection being the same, while diffusely reflected light is less directional, with low angle dependence of intensity. The light reflected from the surface of finger 220 is predominantly diffuse. On the other hand, the light reflected from the interface between substrate 202 and the atmosphere is predominantly specular.

[0257] The intensity of light reflected from the contact or non-contact surface between the finger 220 and the substrate 202, and incident on the photodetector 212 located directly beneath them, is the sum of specularly reflected light and diffusely reflected light. As described above, in the recessed areas of the finger 220, the substrate 202 and the finger 220 do not come into contact, so specularly reflected light (indicated by the solid arrow) is dominant, while in the convex areas, they come into contact, so diffusely reflected light from the finger 220 (indicated by the dashed arrow) is dominant. Therefore, the intensity of light received by the photodetector 212 located directly beneath the recessed areas is higher than that received by the photodetector 212 located directly beneath the convex areas. This allows for imaging of the fingerprint of the finger 220.

[0258] The spacing between the light-receiving elements 212 is set to be smaller than the distance between two protrusions of a fingerprint, preferably the distance between adjacent recesses and protrusions, thereby enabling the acquisition of a clear fingerprint image. Since the distance between recesses and protrusions in a human fingerprint is approximately 200 μm, for example, the spacing between the light-receiving elements 212 is 400 μm or less, preferably 200 μm or less, more preferably 150 μm or less, even more preferably 100 μm or less, and even more preferably 50 μm or less, and 1 μm or more, preferably 10 μm or more, and more preferably 20 μm or more.

[0259] Figure 15C shows an example of a fingerprint image captured by the display panel 200. In Figure 15C, the outline of the finger 220 is shown with a dashed line and the outline of the contact area 221 is shown with a dashed line within the imaging range 223. Within the contact area 221, a high-contrast fingerprint 222 can be captured due to the difference in the amount of light incident on the light-receiving element 212.

[0260] The display panel 200 can also function as a touch panel and a pen tablet. Fig. 15D shows a state where the tip of the stylus 225 is in contact with the substrate 202 and is being slid in the direction of the dashed arrow.

[0261] As shown in Fig. 15D, the diffused reflected light diffused at the contact surface between the tip of the stylus 225 and the substrate 202 is incident on the light receiving element 212 located at the portion overlapping with the contact surface, so that the position of the tip of the stylus 225 can be detected with high accuracy.

[0262] Fig. 15E shows an example of the trajectory 226 of the stylus 225 detected by the display panel 200. Since the display panel 200 can detect the position of a detected object such as the stylus 225 with high positional accuracy, it is also possible to perform high-definition drawing in a drawing application or the like. Also, unlike the case of using a capacitive touch sensor, an electromagnetic induction type touch pen, etc., since the position of a highly insulating detected object can be detected, the material of the tip of the stylus 225 is not limited, and various writing utensils (for example, a pen, a glass pen, a feather pen, etc.) can also be used.

[0263] Here, Figs. 15F to 15H show an example of pixels applicable to the display panel 200.

[0264] The pixels shown in Figs. 15F and 15G each have a red (R) light emitting element 211R, a green (G) light emitting element 211G, a blue (B) light emitting element 211B, and a light receiving element 212. Each pixel has a pixel circuit for driving the light emitting element 211R, the light emitting element 211G, the light emitting element 211B, and the light receiving element 212, respectively.

[0265] Fig. 15F is an example in which three light emitting elements and one light receiving element are arranged in a 2×2 matrix. Fig. 15G is an example in which three light emitting elements are arranged in a row, and a horizontally long one light receiving element 212 is arranged below them.

[0266] The pixel shown in FIG. 15H is an example having a white (W) light-emitting element 211W. Here, four light-emitting elements are arranged in a row, and a light-receiving element 212 is arranged below them.

[0267] Note that the configuration of the pixel is not limited to the above, and various arrangement methods can be adopted.

[0268] 〔Configuration Example 1-2〕 Hereinafter, an example of a configuration including a light-emitting element that exhibits visible light, a light-emitting element that exhibits infrared light, and a light-receiving element will be described.

[0269] The display panel 200A shown in FIG. 16A has a light-emitting element 211IR in addition to the configuration illustrated in FIG. 15A. The light-emitting element 211IR is a light-emitting element that emits infrared light IR. At this time, it is preferable to use, as the light-receiving element 212, an element that can receive at least the infrared light IR emitted by the light-emitting element 211IR. More preferably, an element that can receive both visible light and infrared light is used as the light-receiving element 212.

[0270] As shown in FIG. 16A, when a finger 220 touches the substrate 202, the infrared light IR emitted from the light-emitting element 211IR is reflected by the finger 220, and a part of the reflected light is incident on the light-receiving element 212, whereby the position information of the finger 220 can be obtained.

[0271] Examples of pixels applicable to the display panel 200A are shown in FIGS. 16B to 16D.

[0272] FIG. 16B is an example in which three light-emitting elements are arranged in a row, and below them, the light-emitting element 211IR and the light-receiving element 212 are arranged side by side horizontally. FIG. 16C is an example in which four light-emitting elements including the light-emitting element 211IR are arranged in a row, and below them, the light-receiving element 212 is arranged.

[0273] FIG. 16D is an example in which three light-emitting elements and the light-receiving element 212 are arranged in four directions around the light-emitting element 211IR.

[0274] In addition, in the pixels shown in Figures 16B to 16D, the positions of the light-emitting elements and the light-emitting elements and the light-receiving elements are interchangeable.

[0275] [Configuration Examples 1-3] The following describes an example of a configuration comprising a light-emitting element that emits visible light and a light-receiving element that emits and receives visible light.

[0276] The display panel 200B shown in Figure 17A includes a light-emitting element 211B, a light-emitting element 211G, and a light-receiving element 213R. The light-receiving element 213R has the function of a light-emitting element that emits red (R) light and a function of a photoelectric conversion element that receives visible light. Figure 17A shows an example in which the light-receiving element 213R receives green (G) light emitted by the light-emitting element 211G. The light-receiving element 213R may also receive blue (B) light emitted by the light-emitting element 211B. Furthermore, the light-receiving element 213R may receive both green and blue light.

[0277] For example, it is preferable that the light-receiving element 213R receives light with a shorter wavelength than the light it emits. Alternatively, the light-receiving element 213R may be configured to receive light with a longer wavelength than the light it emits (e.g., infrared light). The light-receiving element 213R may also be configured to receive light with a wavelength similar to the light it emits, but in that case, it may also receive the light it emits, which may reduce its luminescence efficiency. Therefore, it is preferable that the light-receiving element 213R is configured such that the peaks of its emission spectrum and the peaks of its absorption spectrum do not overlap as much as possible.

[0278] Furthermore, the light emitted by the light-receiving element is not limited to red light. Nor is the light emitted by the light-emitting element limited to a combination of green and blue light. For example, the light-receiving element can emit green or blue light and receive light of a different wavelength than the light it emits.

[0279] In this way, by having the light-emitting element 213R serve as both a light-emitting element and a light-receiving element, the number of elements arranged in a single pixel can be reduced. This makes it easier to achieve higher resolution, higher aperture ratio, and higher resolution.

[0280] Figures 17B to 17I show examples of pixels applicable to the display panel 200B.

[0281] Figure 17B shows an example where the light-emitting element 213R, light-emitting element 211G, and light-emitting element 211B are arranged in a single row. Figure 17C shows an example where the light-emitting elements 211G and 211B are arranged alternately in the vertical direction, with the light-emitting element 213R positioned to the side of them.

[0282] Figure 17D shows an example where three light-emitting elements (light-emitting elements 211G, 211B, and 211X) and one light-receiving element are arranged in a 2x2 matrix. Light-emitting element 211X is an element that emits light other than R, G, and B. Examples of light other than R, G, and B include white (W), yellow (Y), cyan (C), magenta (M), infrared (IR), and ultraviolet (UV) light. If light-emitting element 211X emits infrared light, it is preferable that the light-receiving element has the function of detecting infrared light, or the function of detecting both visible light and infrared light. The wavelength of light detected by the light-receiving element can be determined according to the application of the sensor.

[0283] FIG. 17E shows two pixels. The area including three elements surrounded by a dotted line corresponds to one pixel. Each pixel has a light-emitting element 211G, a light-emitting element 211B, and a light-receiving and light-emitting element 213R. In the left pixel shown in FIG. 17E, the light-emitting element 211G is arranged in the same row as the light-receiving and light-emitting element 213R, and the light-emitting element 211B is arranged in the same column as the light-receiving and light-emitting element 213R. In the right pixel shown in FIG. 17E, the light-emitting element 211G is arranged in the same row as the light-receiving and light-emitting element 213R, and the light-emitting element 211B is arranged in the same column as the light-emitting element 211G. In the pixel layout shown in FIG. 17E, in both odd-numbered rows and even-numbered rows, the light-receiving and light-emitting element 213R, the light-emitting element 211G, and the light-emitting element 211B are repeatedly arranged, and in each column, light-emitting elements or light-receiving and light-emitting elements of different colors are arranged in odd-numbered rows and even-numbered rows.

[0284] FIG. 17F shows four pixels to which a pentile arrangement is applied, and two adjacent pixels have light-emitting elements or light-receiving and light-emitting elements that exhibit two different colors of light in combination. Note that FIG. 17F shows the upper surface shape of the light-emitting element or the light-receiving and light-emitting element.

[0285] The upper-left pixel and the lower-right pixel shown in FIG. 17F have the light-receiving and light-emitting element 213R and the light-emitting element 211G. Also, the upper-right pixel and the lower-left pixel have the light-emitting element 211G and the light-emitting element 211B. That is, in the example shown in FIG. 17F, each pixel is provided with the light-emitting element 211G.

[0286] The upper surface shape of the light-emitting element and the light-receiving and light-emitting element is not particularly limited, and can be a circle, an ellipse, a polygon, a rounded polygon, or the like. FIGS. 17F and the like show an example in which the upper surface shape of the light-emitting element and the light-receiving and light-emitting element is a square (rhombus) inclined at approximately 45 degrees. Note that the upper surface shapes of the light-emitting elements and the light-receiving and light-emitting elements of each color may be different from each other, or may be the same in part or all of the colors.

[0287] Furthermore, the sizes of the light-emitting regions (or light-receiving regions) of each color light-emitting and light-receiving element may differ from each other, or they may be the same for some or all colors. For example, in Figure 17F, the area of ​​the light-emitting region of the light-emitting element 211G provided in each pixel may be smaller than the light-emitting region (or light-receiving region) of the other elements.

[0288] Figure 17G is a modified version of the pixel arrangement shown in Figure 17F. Specifically, the configuration in Figure 17G is obtained by rotating the configuration in Figure 17F by 45 degrees. In Figure 17F, it was explained that one pixel has two elements, but as shown in Figure 17G, it can also be considered that one pixel is composed of four elements.

[0289] Figure 17H ​​shows a modified version of the pixel arrangement shown in Figure 17F. The upper left and lower right pixels in Figure 17H ​​have a light-emitting element 213R and a light-emitting element 211G. The upper right and lower left pixels also have a light-emitting element 213R and a light-emitting element 211B. In other words, in the example shown in Figure 17H, each pixel is provided with a light-emitting element 213R. Because each pixel is provided with a light-emitting element 213R, the configuration shown in Figure 17H ​​can capture images with higher resolution compared to the configuration shown in Figure 17F. This can improve the accuracy of, for example, biometric authentication.

[0290] Figure 17I shows a modified version of the pixel array shown in Figure 17H, which is obtained by rotating the pixel array by 45 degrees.

[0291] In Figure 17I, we explain that one pixel is composed of four elements (two light-emitting elements and two light-receiving elements). In this way, by having multiple light-receiving elements with light-receiving capabilities in a single pixel, imaging can be performed with high resolution. Therefore, the accuracy of biometric authentication can be improved. For example, the resolution of the image can be made √2 times the resolution of the display.

[0292] A display device to which the configuration shown in Figure 17H ​​or Figure 17I is applied has p (where p is an integer greater than or equal to 2) first light-emitting elements, q (where q is an integer greater than or equal to 2) second light-emitting elements, and r (where r is an integer greater than p and greater than q) receiving light-emitting elements. p and r satisfy r = 2p. Also, p, q, and r satisfy r = p + q. One of the first light-emitting elements and the second light-emitting elements emits green light, and the other emits blue light. The receiving light-emitting elements emit red light and have a light-receiving function.

[0293] For example, when detecting touch operations using a light-emitting / receiving device, it is preferable that the light emitted from the light source is not easily visible to the user. Since blue light is less visible than green light, it is preferable to use a light-emitting device that emits blue light as the light source. Therefore, it is preferable that the light-emitting / receiving device has the function of receiving blue light. However, it is not limited to this, and the light-emitting device used as the light source can be appropriately selected according to the sensitivity of the light-emitting / receiving device.

[0294] As described above, various pixel arrangements can be applied to the display device of this embodiment.

[0295] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0296] (Embodiment 4) In this embodiment, a light-emitting element (also called a light-emitting device) and a light-receiving element (also called a light-receiving device) that can be used in a light-receiving device according to one aspect of the present invention will be described.

[0297] In this specification, devices fabricated using a metal mask or an FMM (Fine Metal Mask, a high-resolution metal mask) may be referred to as MM (Metal Mask) structured devices. Furthermore, in this specification, devices fabricated without using a metal mask or an FMM may be referred to as MML (Metal Maskless) structured devices.

[0298] In this specification, a structure in which different light-emitting layers are created or painted for each color of light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. Also, in this specification, a light-emitting device capable of emitting white light may be referred to as a white light-emitting device. A white light-emitting device can be combined with a colored layer (for example, a color filter) to create a full-color display device.

[0299] Furthermore, light-emitting devices can be broadly classified into single structures and tandem structures. A single-structure device has one light-emitting unit between a pair of electrodes, and it is preferable that this light-emitting unit includes one or more light-emitting layers. To obtain white light emission in a single structure, one should select light-emitting layers such that the light emitted by each of the two or more layers can produce white light. For example, in the case of two colors, by making the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer complementary colors, a configuration can be obtained in which the light-emitting device as a whole emits white light. Also, when obtaining white light emission using three or more light-emitting layers, the configuration should be such that the light-emitting colors of the three or more light-emitting layers combine to produce white light emission in the light-emitting device as a whole.

[0300] A tandem device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. By using light-emitting layers that emit light of the same color in each light-emitting unit, the brightness per given current can be increased, and a more reliable light-emitting device can be achieved compared to a single structure. To obtain white light emission in a tandem structure, the light from the light-emitting layers of multiple light-emitting units can be combined to produce white light emission. The combination of light-emitting colors that produces white light emission is the same as that for a single structure. In a tandem device, it is preferable to provide an intermediate layer, such as a charge-generating layer, between the multiple light-emitting units.

[0301] Furthermore, when comparing the aforementioned white light-emitting devices (single or tandem structure) with SBS structure light-emitting devices, SBS structure light-emitting devices can consume less power than white light-emitting devices. If you want to keep power consumption low, it is preferable to use SBS structure light-emitting devices. On the other hand, white light-emitting devices are preferable because their manufacturing process is simpler than that of SBS structure light-emitting devices, which can lead to lower manufacturing costs or higher manufacturing yields.

[0302] [Device Structure] Next, a detailed configuration of a light-emitting element, a light-receiving element, and a light-receiving element that can be used in a display device according to one embodiment of the present invention will be described.

[0303] A display device according to one aspect of the present invention may be a top-emission type that emits light in the direction opposite to the substrate on which the light-emitting element is formed, a bottom-emission type that emits light toward the substrate on which the light-emitting element is formed, or a dual-emission type that emits light on both sides.

[0304] In this embodiment, a top-emission type display device will be used as an example for explanation.

[0305] In this specification, unless otherwise specified, when describing a configuration having multiple elements (such as light-emitting elements and light-emitting layers), the letters will be omitted when describing matters common to each element. For example, when describing matters common to light-emitting layers 383R and 383G, etc., it may be written as light-emitting layer 383.

[0306] The display device 380A shown in Figure 18A includes a light-receiving element 370PD, a light-emitting element 370R that emits red (R) light, a light-emitting element 370G that emits green (G) light, and a light-emitting element 370B that emits blue (B) light.

[0307] Each light-emitting element has a pixel electrode 371, a hole injection layer 381, a hole transport layer 382, ​​a light-emitting layer, an electron transport layer 384, an electron injection layer 385, and a common electrode 375 stacked in this order. Light-emitting element 370R has a light-emitting layer 383R, light-emitting element 370G has a light-emitting layer 383G, and light-emitting element 370B has a light-emitting layer 383B. Light-emitting layer 383R has a light-emitting material that emits red light, light-emitting layer 383G has a light-emitting material that emits green light, and light-emitting layer 383B has a light-emitting material that emits blue light.

[0308] The light-emitting element is an electroluminescent element that emits light towards the common electrode 375 when a voltage is applied between the pixel electrode 371 and the common electrode 375.

[0309] The photodetector 370PD has a pixel electrode 371, a hole injection layer 381, a hole transport layer 382, ​​an active layer 373, an electron transport layer 384, an electron injection layer 385, and a common electrode 375 stacked in this order.

[0310] The light-receiving element 370PD is a photoelectric conversion element that receives light incident from outside the display device 380A and converts it into an electrical signal.

[0311] In this embodiment, both the light-emitting element and the light-receiving element are described as having a pixel electrode 371 functioning as the anode and a common electrode 375 functioning as the cathode. In other words, the light-receiving element can detect light incident on it, generate an electric charge, and extract it as an electric current by driving it with a reverse bias applied between the pixel electrode 371 and the common electrode 375.

[0312] In the display device of this embodiment, an organic compound is used for the active layer 373 of the light-receiving element 370PD. The layers of the light-receiving element 370PD other than the active layer 373 can have the same configuration as those of the light-emitting element. Therefore, by simply adding a step of forming the active layer 373 to the manufacturing process of the light-emitting element, the light-receiving element 370PD can be formed in parallel with the formation of the light-emitting element. Furthermore, the light-emitting element and the light-receiving element 370PD can be formed on the same substrate. Thus, the light-receiving element 370PD can be incorporated into the display device without significantly increasing the manufacturing process.

[0313] In the display device 380A, an example is shown where the light-receiving element 370PD and the light-emitting element have a common configuration, except that the active layer 373 of the light-receiving element 370PD and the light-emitting layer 383 of the light-emitting element are manufactured separately. However, the configuration of the light-receiving element 370PD and the light-emitting element is not limited to this. In addition to the active layer 373 and the light-emitting layer 383, the light-receiving element 370PD and the light-emitting element may have layers that are manufactured separately from each other. It is preferable that the light-receiving element 370PD and the light-emitting element have one or more layers that are used in common (common layers). This makes it possible to incorporate the light-receiving element 370PD into the display device without significantly increasing the manufacturing process.

[0314] Of the pixel electrode 371 and the common electrode 375, the electrode that extracts light preferably uses a conductive film that transmits visible light. Furthermore, it is preferable to use a conductive film that reflects visible light on the electrode that does not extract light.

[0315] In this embodiment, it is preferable that the light-emitting element of the display device has a microcavity structure. Therefore, it is preferable that one of the pair of electrodes of the light-emitting element has an electrode that is transparent to and reflective to visible light (a semi-transmitting / semi-reflective electrode), and the other has an electrode that is reflective to visible light (a reflective electrode). By having a microcavity structure in the light-emitting element, the light emitted from the light-emitting layer can be resonated between the two electrodes, thereby strengthening the light emitted from the light-emitting element.

[0316] Furthermore, semi-transmissive / semi-reflective electrodes can have a laminated structure consisting of a reflective electrode and an electrode that transmits visible light (also called a transparent electrode).

[0317] The light transmittance of the transparent electrode shall be 40% or more. For example, it is preferable to use an electrode with a visible light transmittance (light with a wavelength of 400 nm or more and less than 750 nm) of 40% or more in the light-emitting element. The visible light reflectance of the semi-transparent / semi-reflective electrode shall be 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode shall be 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes shall be 1 × 10⁻⁶ -2 It is preferable that the value be Ωcm or less. Furthermore, if the light-emitting element emits near-infrared light (light with a wavelength of 750 nm to 1300 nm), it is preferable that the transmittance or reflectance of these electrodes in near-infrared light satisfies the above numerical range, similar to the transmittance or reflectance of visible light.

[0318] The light-emitting element has at least an emissive layer 383. The light-emitting element may further have layers other than the emissive layer 383 that include a material with high hole injection properties, a material with high hole transport properties, a hole blocking material, a material with high electron transport properties, a material with high electron injection properties, an electron blocking material, or a bipolar material (a material with high electron transport and hole transport properties).

[0319] For example, a light-emitting element and a photodetector can have one or more layers from among the hole injection layer, hole transport layer, electron transport layer, and electron injection layer in common. Alternatively, one or more layers from among the hole injection layer, hole transport layer, electron transport layer, and electron injection layer can be manufactured separately for each element.

[0320] The hole injection layer is a layer that injects holes from the anode into the hole transport layer, and is a layer containing a material with high hole injection properties. As a material with high hole injection properties, aromatic amine compounds or composite materials containing a hole transport material and an acceptor material (electron-accepting material) can be used.

[0321] In a light-emitting element, the hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. In a photodetector, the hole transport layer is a layer that transports holes generated in the active layer based on incident light to the anode. The hole transport layer is a layer containing a hole-transporting material. As for the hole-transporting material, 1 × 10 -6 cm 2 Materials having a hole mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher hole transport capabilities than electron transport. Preferred hole transport materials include π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines (compounds having an aromatic amine skeleton), which are materials with high hole transport capabilities.

[0322] In a light-emitting element, the electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. In a photodetector, the electron transport layer is a layer that transports electrons generated in the active layer based on incident light to the cathode. The electron transport layer is a layer containing an electron-transporting material. As an electron-transporting material, 1 × 10 -6 cm 2 Materials having an electron mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher electron transport capabilities than holes. Examples of electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds containing nitrogen-containing heteroaromatic compounds.

[0323] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is a layer containing a material with high electron injection capabilities. Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron injection capabilities. Composite materials containing both electron transport materials and donor materials (electron-donating materials) can also be used as materials with high electron injection capabilities.

[0324] The light-emitting layer 383 is a layer containing a light-emitting material. The light-emitting layer 383 may contain one or more types of light-emitting materials. The light-emitting material may be a substance that exhibits a light emission color such as blue, purple, blue-violet, green, yellow-green, yellow, orange, or red. A substance that emits near-infrared light may also be used as the light-emitting material.

[0325] Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0326] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0327] Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton; organometallic complexes (especially iridium complexes) using phenylpyridine derivatives having electron-withdrawing groups as ligands; platinum complexes; and rare earth metal complexes.

[0328] The light-emitting layer 383 may contain one or more types of organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material). One or more types of organic compounds may include hole-transporting materials and electron-transporting materials, or both. Alternatively, one or more types of organic compounds may include bipolar materials or TADF materials.

[0329] The light-emitting layer 383 preferably comprises, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that readily forms an excitation complex. With such a configuration, light emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the excitation complex to the light-emitting substance (phosphorescent material), can be efficiently obtained. By selecting a combination that forms an excitation complex that exhibits light emission overlapping with the wavelength of the lowest-energy absorption band of the light-emitting substance, energy transfer becomes smoother, and light emission can be efficiently obtained. This configuration enables high efficiency, low-voltage operation, and long lifespan of the light-emitting element simultaneously.

[0330] For a combination of materials to form an excited complex, it is preferable that the HOMO level (highest occupied orbital level) of the hole-transporting material is greater than or equal to the HOMO level of the electron-transporting material. It is also preferable that the LUMO level (lowest unoccupied orbital level) of the hole-transporting material is greater than or equal to the LUMO level of the electron-transporting material. The LUMO and HOMO levels of the materials can be derived from the electrochemical properties (reduction potential and oxidation potential) of the materials measured by cyclic voltammetry (CV).

[0331] The formation of excited complexes can be confirmed, for example, by comparing the emission spectra of a hole-transporting material, an electron-transporting material, and a mixed film made by mixing these materials, and observing that the emission spectrum of the mixed film shifts to a longer wavelength than the emission spectra of each individual material (or has a new peak on the longer wavelength side). Alternatively, it can be confirmed by comparing the transient photoluminescence (PL) of a hole-transporting material, an electron-transporting material, and a mixed film made by mixing these materials, and observing differences in the transient response, such as the transient PL lifetime of the mixed film having a longer lifetime component or a larger proportion of the delayed component than the transient PL lifetime of each individual material. Furthermore, the transient PL mentioned above can be read as transient electroluminescence (EL). That is, the formation of excited complexes can also be confirmed by comparing the transient EL of a hole-transporting material, an electron-transporting material, and a mixed film made by mixing these materials, and observing the differences in the transient response.

[0332] The active layer 373 contains a semiconductor. Examples of such semiconductors include inorganic semiconductors such as silicon, and organic semiconductors containing organic compounds. In this embodiment, an example is shown in which an organic semiconductor is used as the semiconductor of the active layer 373. Using an organic semiconductor is preferable because the light-emitting layer 383 and the active layer 373 can be formed by the same method (for example, vacuum deposition), and the manufacturing equipment can be shared.

[0333] The n-type semiconductor material of the active layer 373 is fullerene (for example, C 60 , C 70Examples of electron-accepting organic semiconductor materials include fullerene derivatives and the like. Fullerene has a soccer ball-like shape, which is energetically stable. Fullerene has deep (low) HOMO and LUMO levels. Due to its deep LUMO level, fullerene has extremely high electron-accepting (acceptor) properties. Usually, when π-electron conjugation (resonance) spreads in a plane like benzene, the electron-donating (donor) property increases. However, since fullerene has a spherical shape, despite the large spread of π-electron conjugation, its electron-accepting property is high. High electron-accepting property is beneficial for a light-receiving element because it causes charge separation to occur efficiently at high speed. C 60 and C 70 both have broad absorption bands in the visible light region. In particular, C 70 is preferable because it has a larger π-electron conjugation system and a broad absorption band in the long wavelength region compared to C 60 . In addition, examples of fullerene derivatives include [6,6]-Phenyl-C 71 -butyric acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C 61 -butyric acid methyl ester (abbreviation: PC60BM), 1’,1’’,4’,4’’-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2’,3’,56,60:2’’,3’’][5,6]fullerene-C 60 (abbreviation: ICBA), etc.

[0334] Also, examples of n-type semiconductor materials include perylene tetracarboxylic acid derivatives such as N,N’-dimethyl-3,4,9,10-perylene tetracarboxylic acid diimide (abbreviation: Me-PTCDI).

[0335] Also, examples of n-type semiconductor materials include 2,2’-(5,5’-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methan-1-yl-1-ylidene)dimalononitrile (abbreviation: FT2TDMN).

[0336] Furthermore, examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0337] Examples of p-type semiconductor materials for the active layer 373 include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), quinacridone, and rubrene.

[0338] Furthermore, examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. In addition, examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0339] The HOMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the HOMO level of electron-accepting organic semiconductor materials. The LUMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the LUMO level of electron-accepting organic semiconductor materials.

[0340] It is preferable to use spherical fullerenes as electron-accepting organic semiconductor materials and organic semiconductor materials with a near-planar shape as electron-donating organic semiconductor materials. Molecules with similar shapes tend to aggregate, and when molecules of the same type aggregate, their molecular orbital energy levels are close, which can improve carrier transport.

[0341] For example, the active layer 373 is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor. Alternatively, the active layer 373 may be formed by stacking an n-type semiconductor and a p-type semiconductor.

[0342] The light-emitting element and the light-receiving element may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-emitting element and the light-receiving element can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0343] For example, polymer compounds such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS), and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole transporting materials or electron blocking materials. In addition, inorganic compounds such as zinc oxide (ZnO) and organic compounds such as polyethyleneimine ethoxylate (PEIE) can be used as electron transporting materials or hole blocking materials. The light-receiving device may have, for example, a mixed film of PEIE and ZnO.

[0344] Furthermore, the active layer 373 can use polymer compounds such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]]polymer (abbreviated as PBDB-T) or PBDB-T derivatives, which function as donors. For example, a method of dispersing the acceptor material in PBDB-T or a PBDB-T derivative can be used.

[0345] The display device 380B shown in Figure 18B differs from the display device 380A in that the light-receiving element 370PD and the light-emitting element 370R have the same configuration.

[0346] The light-receiving element 370PD and the light-emitting element 370R both share an active layer 373 and a light-emitting layer 383R.

[0347] Here, it is preferable that the light-receiving element 370PD has a common configuration with the light-emitting element that emits light with a longer wavelength than the light to be detected. For example, the light-receiving element 370PD configured to detect blue light can have the same configuration as one or both of the light-emitting elements 370R and 370G. For example, the light-receiving element 370PD configured to detect green light can have the same configuration as the light-emitting element 370R.

[0348] By using a common configuration for the light-receiving element 370PD and the light-emitting element 370R, the number of film deposition steps and masks can be reduced compared to a configuration where the light-receiving element 370PD and the light-emitting element 370R have distinct layers. Therefore, the manufacturing process and cost of the display device can be reduced.

[0349] Furthermore, by using a common configuration for the light-receiving element 370PD and the light-emitting element 370R, the margin for misalignment can be narrowed compared to a configuration where the light-receiving element 370PD and the light-emitting element 370R have distinct layers. This allows for an increase in the aperture ratio of the pixels, thereby improving the light extraction efficiency of the display device. This extends the lifespan of the light-emitting element. In addition, the display device can display high brightness. Furthermore, it is possible to increase the resolution of the display device.

[0350] The light-emitting layer 383R has a light-emitting material that emits red light. The active layer 373 has an organic compound that absorbs light with a shorter wavelength than red (for example, green light and / or blue light). Preferably, the active layer 373 has an organic compound that does not easily absorb red light and absorbs light with a shorter wavelength than red. As a result, red light is efficiently extracted from the light-emitting element 370R, and the photodetector 370PD can detect light with a shorter wavelength than red with high accuracy.

[0351] Furthermore, although the display device 380B shows an example in which the light-emitting element 370R and the light-receiving element 370PD have the same configuration, the light-emitting element 370R and the light-receiving element 370PD may each have optical adjustment layers of different thicknesses.

[0352] The display device 380C shown in Figures 19A and 19B has a light-receiving element 370SR, an element 370G, and an element 370B that emit red (R) light and have a light-receiving function. The configuration of the element 370G and the element 370B can be found in reference to the display device 380A described above.

[0353] The light-receiving element 370SR has a pixel electrode 371, a hole injection layer 381, a hole transport layer 382, ​​an active layer 373, a light-emitting layer 383R, an electron transport layer 384, an electron injection layer 385, and a common electrode 375 stacked in this order. The light-receiving element 370SR has the same configuration as the light-receiving element 370R and the light-receiving element 370PD exemplified in the display device 380B described above.

[0354] Figure 19A shows the case where the light-emitting element 370SR functions as a light-emitting element. In Figure 19A, an example is shown where the light-emitting element 370B emits blue light, the light-emitting element 370G emits green light, and the light-emitting element 370SR emits red light.

[0355] Figure 19B shows the case where the light-receiving element 370SR functions as a light-receiving element. Figure 19B shows an example in which the light-receiving element 370SR receives blue light emitted by the light-emitting element 370B and green light emitted by the light-emitting element 370G.

[0356] The light-emitting element 370B, the light-emitting element 370G, and the light-receiving element 370SR each have a pixel electrode 371 and a common electrode 375, respectively. In this embodiment, the case in which the pixel electrode 371 functions as an anode and the common electrode 375 functions as a cathode will be described as an example. The light-receiving element 370SR can detect light incident on it, generate an electric charge, and extract it as an electric current by driving it with a reverse bias applied between the pixel electrode 371 and the common electrode 375.

[0357] The light-receiving element 370SR can be described as a light-emitting element with an active layer 373 added. In other words, by simply adding a step of depositing the active layer 373 to the manufacturing process of the light-emitting element, the light-receiving element 370SR can be formed in parallel with the formation of the light-emitting element. Furthermore, the light-emitting element and the light-receiving element can be formed on the same substrate. Therefore, without significantly increasing the manufacturing process, it is possible to provide the display unit with either or both imaging and sensing functions.

[0358] The stacking order of the light-emitting layer 383R and the active layer 373 is not limited. Figures 19A and 19B show an example in which the active layer 373 is provided on the hole transport layer 382 and the light-emitting layer 383R is provided on the active layer 373. The stacking order of the light-emitting layer 383R and the active layer 373 may be reversed.

[0359] Furthermore, the light-emitting / receiving element does not necessarily have to have at least one of the hole injection layer 381, hole transport layer 382, ​​electron transport layer 384, and electron injection layer 385. The light-emitting / receiving element may also have other functional layers, such as a hole blocking layer or an electron blocking layer.

[0360] In a light-receiving and light-emitting device, it is preferable to use a conductive film that transmits visible light on the electrode that extracts light, and to use a conductive film that reflects visible light on the electrode that does not extract light.

[0361] The functions and materials of each layer constituting the light-emitting and light-receiving elements are the same as those of each layer constituting the light-emitting and light-receiving elements, so a detailed explanation is omitted.

[0362] Figures 19C to 19G show examples of stacked structures of light-emitting and receiving devices.

[0363] The light-emitting and receiving device shown in Figure 19C includes a first electrode 377, a hole injection layer 381, a hole transport layer 382, ​​a light-emitting layer 383R, an active layer 373, an electron transport layer 384, an electron injection layer 385, and a second electrode 378.

[0364] Figure 19C shows an example in which a light-emitting layer 383R is provided on a hole transport layer 382, ​​and an active layer 373 is laminated on the light-emitting layer 383R.

[0365] As shown in Figures 19A to 19C, the active layer 373 and the light-emitting layer 383R may be in contact with each other.

[0366] Furthermore, it is preferable to provide a buffer layer between the active layer 373 and the light-emitting layer 383R. In this case, it is preferable that the buffer layer has hole transport and electron transport properties. For example, it is preferable to use a bipolar material for the buffer layer. Alternatively, at least one layer from among a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a hole blocking layer, and an electron blocking layer can be used as the buffer layer. Figure 19D shows an example in which a hole transport layer 382 is used as the buffer layer.

[0367] By providing a buffer layer between the active layer 373 and the light-emitting layer 383R, the transfer of excitation energy from the light-emitting layer 383R to the active layer 373 can be suppressed. Furthermore, the buffer layer can be used to adjust the optical path length (cavity length) of the microcavity structure. Therefore, a light-emitting / receiving device having a buffer layer between the active layer 373 and the light-emitting layer 383R can achieve high luminescence efficiency.

[0368] Figure 19E shows an example of a laminated structure in which a hole transport layer 382-1, an active layer 373, a hole transport layer 382-2, and an emissive layer 383R are stacked in that order on a hole injection layer 381. The hole transport layer 382-2 functions as a buffer layer. The hole transport layers 382-1 and 381-2 may contain the same material or different materials. Alternatively, a layer that can be used as a buffer layer as described above may be used instead of the hole transport layer 381-2. Furthermore, the positions of the active layer 373 and the emissive layer 383R may be swapped.

[0369] The light-receiving element shown in Figure 19F differs from the light-receiving element shown in Figure 19A in that it does not have a hole transport layer 382. Thus, the light-receiving element does not need to have at least one of the hole injection layer 381, hole transport layer 382, ​​electron transport layer 384, and electron injection layer 385. Furthermore, the light-receiving element may have other functional layers such as a hole blocking layer or an electron blocking layer.

[0370] The light-receiving element shown in Figure 19G differs from the light-receiving element shown in Figure 19A in that it does not have an active layer 373 and a light-emitting layer 383R, but has a layer 389 that serves as both a light-emitting layer and an active layer.

[0371] As a layer that serves as both an emissive layer and an active layer, for example, a layer can be used that contains three materials: an n-type semiconductor that can be used in the active layer 373, a p-type semiconductor that can be used in the active layer 373, and an emissive material that can be used in the emissive layer 383R.

[0372] Furthermore, it is preferable that the lowest energy absorption band of the absorption spectrum of the mixed material of n-type and p-type semiconductors and the maximum peak of the emission spectrum (PL spectrum) of the luminescent material do not overlap, and it is even more preferable that they are sufficiently far apart.

[0373] The above examples show cases where a common layer is provided between the light-emitting element and the light-receiving element, or between the light-emitting element and the light-receiving element. Below, we will show examples where no common layer is provided.

[0374] The display device 380D shown in Figure 20A is an example in which only the common electrode 375 is common among the light-receiving element 370PD, light-emitting element 370R, light-emitting element 370G, and light-emitting element 370B.

[0375] The hole injection layer 381, hole transport layer 382, ​​electron transport layer 384, and electron injection layer 385 provided on the light-emitting element 370R, light-emitting element 370G, and light-emitting element 370B are each formed by different processes, and their thickness, material, density, etc., may differ for each light-emitting element, or they may be the same.

[0376] The photodetector 370PD has a stacked structure comprising a pixel electrode 371, a hole transport layer 382, ​​an active layer 373, an electron transport layer 384, and a common electrode 375. Compared to the display device 380A, the stacked structure is simplified. Therefore, the driving voltage of the photodetector 370PD can be reduced.

[0377] The display device 380E shown in Figure 20B is an example in which the light-receiving element 370PD and the light-emitting element 370R have the same stacked structure, while the light-emitting elements 370G and 370B have different stacked structures.

[0378] Furthermore, the display device 380F shown in Figure 20C is an example in which the light-receiving element 370SR, the light-emitting element 370G, and the light-emitting element 370B each have different stacked structures.

[0379] In this way, by eliminating the common layer, the stacked structures of the light-emitting element, photodetector, and light-receiving element can be made different, making it easy to individually optimize the material, thickness, density, etc., of each layer. Furthermore, by not providing a common layer between the light-emitting element and the photodetector, or between the light-emitting element and the light-receiving element, leakage current can be prevented through the common layer, improving the signal-to-noise ratio and enabling the capture of clearer images.

[0380] (Embodiment 5) This embodiment describes an example of a display device having a light-receiving device, etc., according to one aspect of the present invention.

[0381] In the display device of this embodiment, a pixel can be configured to have multiple types of subpixels, each having a light-emitting device that emits a different color. For example, a pixel can be configured to have three types of subpixels. Examples of these three subpixels include subpixels of three colors: red (R), green (G), and blue (B); and subpixels of three colors: yellow (Y), cyan (C), and magenta (M). Alternatively, a pixel can be configured to have four types of subpixels. Examples of these four subpixels include subpixels of four colors: red, green, blue, and white (W); and subpixels of four colors: red, green, blue, and yellow.

[0382] There are no particular limitations on the arrangement of subpixels, and various methods can be applied. Examples of subpixel arrangements include stripe arrangements, S-stripe arrangements, matrix arrangements, delta arrangements, Bayer arrangements, and pentile arrangements.

[0383] Furthermore, the top surface shape of a sub-pixel can be, for example, a polygon such as a triangle, quadrilateral (including rectangles and squares), or pentagon, or a polygon with rounded corners, or an ellipse or a circle. The top surface shape of a sub-pixel referred to here corresponds to the top surface shape of the light-emitting area of ​​a light-emitting device.

[0384] In a display device having light-emitting and light-receiving devices in its pixels, the pixels have a light-receiving function, allowing for the detection of contact or proximity of an object while displaying an image. For example, not only can the display device display an image using all of its subpixels, but some subpixels can also emit light as a light source, while the remaining subpixels display an image.

[0385] The pixels shown in Figures 21A, 21B, and 21C have sub-pixels G, B, R, and PS.

[0386] The pixels shown in Figure 21A have a stripe array applied. The pixels shown in Figure 21B have a matrix array applied.

[0387] The pixel arrangement shown in Figure 21C has a configuration in which three subpixels (subpixel R, subpixel G, and subpixel S) are arranged vertically next to one subpixel (subpixel B).

[0388] The pixels shown in Figures 21D, 21E, and 21F have sub-pixels G, B, R, IR, and PS.

[0389] Figures 21D, 21E, and 21F show examples where a single pixel spans two rows. The upper row (first row) has three subpixels (subpixel G, subpixel B, and subpixel R), while the lower row (second row) has two subpixels (one subpixel PS and one subpixel IR).

[0390] Figure 21D shows a configuration where three vertically elongated subpixels G, B, and R are arranged horizontally, with a subpixel PS and a horizontally elongated subpixel IR arranged horizontally below them. Figure 21E shows a configuration where two horizontally elongated subpixels G and R are arranged vertically, with a vertically elongated subpixel B next to them, and a horizontally elongated subpixel IR and a vertically elongated subpixel PS arranged horizontally below them. Figure 21F shows a configuration where three vertically elongated subpixels R, G, and B are arranged horizontally, with a horizontally elongated subpixel IR and a vertically elongated subpixel PS arranged horizontally below them. Figures 21E and 21F show the case where the area of ​​subpixel IR is the largest, and the area of ​​subpixel PS is about the same as that of the subpixels.

[0391] Note that the layout of the subpixels is not limited to the configuration shown in Figures 21A to 21F.

[0392] Sub-pixel R has a light-emitting device that emits red light. Sub-pixel G has a light-emitting device that emits green light. Sub-pixel B has a light-emitting device that emits blue light. Sub-pixel IR has a light-emitting device that emits infrared light. Sub-pixel PS has a light-receiving device. The wavelength of light detected by sub-pixel PS is not particularly limited, but it is preferable that the light-receiving device of sub-pixel PS is sensitive to the light emitted by the light-emitting devices of sub-pixel R, sub-pixel G, sub-pixel B, or sub-pixel IR. For example, it is preferable to detect one or more of the wavelengths of light in the blue, violet, blue-violet, green, yellow-green, yellow, orange, and red ranges, and the infrared wavelength range.

[0393] The light-receiving area of ​​a sub-pixel PS is smaller than the light-emitting area of ​​other sub-pixels. A smaller light-receiving area results in a narrower imaging range, which helps suppress blurring in the image and improves resolution. Therefore, using sub-pixel PS enables high-definition or high-resolution imaging. For example, sub-pixel PS can be used to capture images for personal authentication, such as fingerprints, palm prints, irises, pulse patterns (including vein and artery patterns), or faces.

[0394] Furthermore, the sub-pixel PS can be used in touch sensors (also called direct touch sensors) or near-touch sensors (also called hover sensors, hover-touch sensors, non-contact sensors, or touchless sensors). For example, it is preferable for the sub-pixel PS to detect infrared light. This enables touch detection even in dark places.

[0395] Here, a touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen). A touch sensor can detect an object when it comes into direct contact with the display device. A near-touch sensor can detect an object even if it does not come into contact with the display device. For example, it is preferable that the display device can detect an object when the distance between the display device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm. With this configuration, it becomes possible to operate the display device without the object directly touching it; in other words, it becomes possible to operate the display device without contact (touchless). With the above configuration, the risk of the display device becoming dirty or scratched can be reduced, or it becomes possible to operate the display device without the object directly touching any dirt (e.g., dust or viruses) attached to the display device.

[0396] Furthermore, in order to perform high-resolution imaging, it is preferable that sub-pixels PS be provided on all pixels of the display device. On the other hand, when sub-pixels PS are used in touch sensors or near-touch sensors, the accuracy required is not as high as when capturing fingerprints, so it is sufficient to provide them on only some of the pixels of the display device. The detection speed can be increased by reducing the number of sub-pixels PS in the display device to fewer than the number of sub-pixels R, etc.

[0397] Figure 21G shows an example of a pixel circuit for a subpixel having a light-receiving device, and Figure 21H shows an example of a pixel circuit for a subpixel having a light-emitting device.

[0398] The pixel circuit PIX1 shown in Figure 21G includes a light-receiving device PD, transistors M11, M12, M13, M14, and a capacitive element C2. Here, an example is shown in which a photodiode is used as the light-receiving device PD.

[0399] The light-receiving device PD has its anode electrically connected to wiring V1 and its cathode electrically connected to either the source or drain of transistor M11. Transistor M11 has its gate electrically connected to wiring TX and its other source or drain electrically connected to one electrode of capacitive element C2, one source or drain of transistor M12, and the gate of transistor M13. Transistor M12 has its gate electrically connected to wiring RES and its other source or drain electrically connected to wiring V2. Transistor M13 has its source or drain electrically connected to wiring V3 and its other source or drain electrically connected to either the source or drain of transistor M14. Transistor M14 has its gate electrically connected to wiring SE and its other source or drain electrically connected to wiring OUT1.

[0400] Constant potentials are supplied to wirings V1, V2, and V3, respectively. When the photodetector PD is driven with reverse bias, a potential higher than that of wiring V1 is supplied to wiring V2. Transistor M12 is controlled by a signal supplied to wiring RES and has the function of resetting the potential of the node connected to the gate of transistor M13 to the potential supplied to wiring V2. Transistor M11 is controlled by a signal supplied to wiring TX and has the function of controlling the timing at which the potential of the above node changes according to the current flowing through the photodetector PD. Transistor M13 functions as an amplifying transistor that provides an output according to the potential of the above node. Transistor M14 is controlled by a signal supplied to wiring SE and functions as a selection transistor for reading the output according to the potential of the above node with an external circuit connected to wiring OUT1.

[0401] The pixel circuit PIX2 shown in Figure 21H includes a light-emitting device EL, transistors M15, M16, M17, and a capacitive element C3. Here, an example using a light-emitting diode as the light-emitting device EL is shown. In particular, it is preferable to use an organic EL element as the light-emitting device EL.

[0402] Transistor M15 has its gate electrically connected to wiring VG, one of its source or drain electrically connected to wiring VS, and the other of its source or drain electrically connected to one electrode of capacitive element C3 and the gate of transistor M16. One of the source or drain of transistor M16 is electrically connected to wiring V4, and the other is electrically connected to the anode of light-emitting device EL and one of the source or drain of transistor M17. Transistor M17 has its gate electrically connected to wiring MS, and the other of its source or drain electrically connected to wiring OUT2. The cathode of light-emitting device EL is electrically connected to wiring V5.

[0403] Constant potentials are supplied to wirings V4 and V5, respectively. This allows the anode side of the light-emitting device EL to be at a high potential and the cathode side to be at a lower potential than the anode side. Transistor M15 is controlled by a signal supplied to wiring VG and functions as a selection transistor to control the selected state of the pixel circuit PIX2. Transistor M16 functions as a drive transistor that controls the current flowing to the light-emitting device EL according to the potential supplied to its gate. When transistor M15 is conducting, the potential supplied to wiring VS is supplied to the gate of transistor M16, and the luminescence brightness of the light-emitting device EL can be controlled according to that potential. Transistor M17 is controlled by a signal supplied to wiring MS and has the function of outputting the potential between transistor M16 and the light-emitting device EL to the outside via wiring OUT2.

[0404] Here, it is preferable to apply transistors to which the semiconductor layer in which the channel is formed is made of a metal oxide (oxide semiconductor) for transistors M11, M12, M13, and M14 in the pixel circuit PIX1, and transistors M15, M16, and M17 in the pixel circuit PIX2.

[0405] Transistors using metal oxides, which have a wider bandgap and lower carrier density than silicon, can achieve extremely low off-currents. Therefore, this low off-current allows the charge accumulated in the capacitive element connected in series with the transistor to be retained for extended periods. For this reason, it is preferable to use transistors made of oxide semiconductors, particularly for transistors M11, M12, and M15 connected in series with capacitive element C2 or C3. Similarly, using oxide semiconductor transistors for other transistors can reduce manufacturing costs.

[0406] For example, the off-current value of an OS transistor per 1 μm channel width at room temperature is 1 aA (1 × 10⁻¹⁰). -18 A) Below, 1zA(1×10 -21 A) Less than or equal to 1yA(1×10 -24 A) It can be less than or equal to the following. Note that the off-current value of a Si transistor per 1 μm of channel width at room temperature is 1 fA (1 × 10⁻¹⁰). -15 A) More than 1pA (1×10 -12 A) The answer is as follows. Therefore, it can be said that the off-current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0407] Furthermore, transistors M11 to M17 can also be transistors in which silicon is applied as the semiconductor in which the channel is formed. In particular, using highly crystalline silicon such as single-crystal silicon or polycrystalline silicon is preferable because it can achieve high field-effect mobility, enabling faster operation.

[0408] Alternatively, a configuration may be used in which one or more transistors among transistors M11 to M17 have oxide semiconductors applied, and the others have silicon applied.

[0409] Note that in Figures 21G and 21H, transistors are shown as n-channel transistors, but p-channel transistors can also be used.

[0410] It is preferable that the transistors in pixel circuit PIX1 and pixel circuit PIX2 be formed side by side on the same substrate. In particular, it is preferable to configure the transistors in pixel circuit PIX1 and pixel circuit PIX2 to be mixed within a single region and arranged periodically.

[0411] Furthermore, it is preferable to provide one or more layers having either or both transistors and / or capacitive elements in a position that overlaps with the light-receiving device PD or light-emitting device EL. This reduces the effective area occupied by each pixel circuit, enabling the realization of a high-definition light-receiving or display unit.

[0412] To increase the luminescence brightness of the light-emitting device (EL) included in the pixel circuit, it is necessary to increase the amount of current flowing through the EL. To achieve this, the source-drain voltage of the drive transistor included in the pixel circuit must be increased. Compared to Si transistors, OS transistors have a higher breakdown voltage between the source and drain, allowing a higher voltage to be applied to the source-drain of an OS transistor. As a result, by using an OS transistor as the drive transistor in the pixel circuit, the amount of current flowing through the light-emitting device can be increased, thereby increasing the luminescence brightness of the light-emitting device.

[0413] Furthermore, when the transistor operates in the saturation region, OS transistors exhibit smaller changes in source-drain current in response to changes in gate-source voltage compared to Si transistors. Therefore, by using OS transistors as driving transistors in the pixel circuit, the current flowing between the source and drain can be precisely controlled by changes in gate-source voltage, thereby controlling the amount of current flowing to the light-emitting device. This allows for a wider range of tonal gradations in the pixel circuit.

[0414] Furthermore, in terms of the saturation characteristics of the current flowing when a transistor operates in the saturation region, OS transistors can supply a more stable current (saturation current) than Si transistors, even when the source-drain voltage gradually increases. Therefore, by using OS transistors as driving transistors, for example, a stable current can be supplied to a light-emitting device even if there are variations in the current-voltage characteristics of the light-emitting device containing EL material. In other words, when operating in the saturation region, the source-drain current remains almost unchanged even when the source-drain voltage is increased, thus stabilizing the luminescence brightness of the light-emitting device.

[0415] As described above, by using OS transistors in the drive transistors included in the pixel circuit, it is possible to achieve "suppression of black level floating," "increase in luminescence brightness," "multi-gradation," and "suppression of variations in light-emitting devices."

[0416] Furthermore, a display device according to one aspect of the present invention can have a variable refresh rate. For example, power consumption can be reduced by adjusting the refresh rate according to the content displayed on the display device (for example, within a range of 0.01 Hz to 240 Hz). In addition, a drive that reduces the power consumption of the display device by driving with a reduced refresh rate may be called an idling stop (IDS) drive.

[0417] Furthermore, the drive frequency of the touch sensor or near-touch sensor may be changed according to the refresh rate mentioned above. For example, if the refresh rate of the display device is 120Hz, the drive frequency of the touch sensor or near-touch sensor can be set to a frequency higher than 120Hz (typically 240Hz). This configuration enables low power consumption and increases the response speed of the touch sensor or near-touch sensor.

[0418] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0419] (Embodiment 6) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to Figures 22 to 25.

[0420] The electronic device of this embodiment has a display device according to one aspect of the present invention. The display device according to one aspect of the present invention is easily made high-definition, high-resolution, and large-scale. Therefore, the display device according to one aspect of the present invention can be used in the display units of various electronic devices.

[0421] Furthermore, since the display device according to one aspect of the present invention can be manufactured at a low cost, the manufacturing cost of electronic devices can be reduced.

[0422] Examples of electronic devices include television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as other electronic devices with relatively large screens, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, and audio playback devices.

[0423] In particular, a display device according to one aspect of the present invention can be used suitably in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include information terminals (wearable devices) such as wristwatches and bracelets, as well as wearable devices that can be worn on the head, such as VR devices such as head-mounted displays and AR devices such as glasses. Wearable devices also include devices for SR (Substitutional Reality) and devices for MR (Mixed Reality).

[0424] A display device according to one aspect of the present invention preferably has an extremely high resolution such as HD (1280 x 720 pixels), FHD (1920 x 1080 pixels), WQHD (2560 x 1440 pixels), WQXGA (2560 x 1600 pixels), 4K2K (3840 x 2160 pixels), or 8K4K (7680 x 4320 pixels). In particular, a resolution of 4K2K, 8K4K, or higher is preferred. Furthermore, the pixel density (detail) of the display device according to one aspect of the present invention is preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 7000 ppi or more. By using a display device with such high resolution or high detail, it is possible to further enhance the sense of presence and depth.

[0425] The electronic device of this embodiment can be incorporated along the curved surfaces of the interior or exterior walls of a house or building, or the interior or exterior of an automobile.

[0426] The electronic device in this embodiment may have an antenna. By receiving signals with the antenna, the display unit can display images and information. Furthermore, if the electronic device has an antenna and a secondary battery, the antenna may be used for contactless power transmission.

[0427] The electronic device of this embodiment may have sensors (including those with the function of detecting, detecting, or measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation).

[0428] The electronic device of this embodiment can have a variety of functions. For example, it can have a function to display various information (still images, videos, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, a function to execute various software (programs), a wireless communication function, a function to read programs or data recorded on a recording medium, and so on.

[0429] The electronic device 6500 shown in Figure 22A is a portable information terminal that can be used as a smartphone.

[0430] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The display unit 6502 has a touch panel function.

[0431] A display device according to one aspect of the present invention can be applied to the display unit 6502.

[0432] Figure 22B is a schematic cross-sectional view of the housing 6501, including the end on the microphone 6506 side.

[0433] A light-transmitting protective member 6510 is provided on the display side of the housing 6501, and the display panel 6511, optical member 6512, touch sensor panel 6513, printed circuit board 6517, battery 6518, etc. are arranged in the space enclosed by the housing 6501 and the protective member 6510.

[0434] The protective member 6510 is fixed to the display panel 6511, the optical member 6512, and the touch sensor panel 6513 by an adhesive layer (not shown).

[0435] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back, and the FPC 6515 is connected to this folded portion. IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals provided on the printed circuit board 6517.

[0436] A flexible display (a display device with flexibility) according to one embodiment of the present invention can be applied to the display panel 6511. As a result, an extremely lightweight electronic device can be realized. Furthermore, because the display panel 6511 is extremely thin, a large-capacity battery 6518 can be installed while keeping the thickness of the electronic device low. In addition, by folding back a part of the display panel 6511 and placing the connection part with the FPC 6515 on the back of the pixel area, an electronic device with a narrow bezel can be realized.

[0437] Figure 23A shows an example of a television system. The television system 7100 has a display unit 7000 incorporated into a housing 7101. Here, the housing 7101 is shown supported by a stand 7103.

[0438] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0439] The television device 7100 shown in Figure 23A can be operated using the operation switches on the housing 7101 and a separate remote control unit 7111. Alternatively, the display unit 7000 may be equipped with a touch sensor, and the television device 7100 can be operated by touching the display unit 7000 with a finger or the like. The remote control unit 7111 may have a display unit that displays information output from the remote control unit 7111. Channels and volume can be controlled and the image displayed on the display unit 7000 can be controlled using the operation keys or touch panel on the remote control unit 7111.

[0440] The television system 7100 is configured to include a receiver and a modem. The receiver can receive general television broadcasts. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0441] Figure 23B shows an example of a notebook personal computer. The notebook personal computer 7200 has a casing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. A display unit 7000 is incorporated into the casing 7211.

[0442] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0443] Figures 23C and 23D show examples of digital signage.

[0444] The digital signage 7300 shown in Figure 23C comprises a housing 7301, a display unit 7000, and a speaker 7303, etc. Furthermore, it may include LED lamps, operation keys (including a power switch or operation switch), connection terminals, various sensors, a microphone, etc.

[0445] Figure 23D shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is provided along the curved surface of the column 7401.

[0446] In Figures 23C and 23D, a display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0447] The larger the display area 7000, the more information can be provided at once. Furthermore, a larger display area 7000 is more eye-catching, which can, for example, enhance the effectiveness of advertising.

[0448] Applying a touch panel to the display unit 7000 is preferable because it not only allows images or videos to be displayed on the display unit 7000, but also enables intuitive operation by the user. Furthermore, when used for purposes such as providing route information or traffic information, intuitive operation can enhance usability.

[0449] Furthermore, as shown in Figures 23C and 23D, it is preferable that the digital signage 7300 or digital signage 7400 can be linked wirelessly with an information terminal 7311 or information terminal 7411 such as a smartphone owned by the user. For example, the advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or information terminal 7411. Also, the display on the display unit 7000 can be switched by operating the information terminal 7311 or information terminal 7411.

[0450] Furthermore, the digital signage 7300 or digital signage 7400 can be used to run games using the screen of the information terminal 7311 or information terminal 7411 as the control device (controller). This allows a large number of users to participate in and enjoy the game simultaneously.

[0451] Figure 24A shows the external appearance of the camera 8000 with the viewfinder 8100 attached.

[0452] The camera 8000 includes a housing 8001, a display unit 8002, operation buttons 8003, a shutter button 8004, etc. A detachable lens 8006 is also attached to the camera 8000. The lens 8006 and the housing of the camera 8000 may be integrated into a single unit.

[0453] Camera 8000 can take an image by pressing the shutter button 8004 or by touching the display unit 8002, which functions as a touch panel.

[0454] The housing 8001 has a mount with electrodes, and in addition to the viewfinder 8100, a strobe device and the like can be connected to it.

[0455] The viewfinder 8100 includes a housing 8101, a display unit 8102, buttons 8103, etc.

[0456] The housing 8101 is attached to the camera 8000 by a mount that engages with the camera 8000's mount. The viewfinder 8100 can display images and other data received from the camera 8000 on the display unit 8102.

[0457] Button 8103 functions as a power button, etc.

[0458] A display device according to one embodiment of the present invention can be applied to the display unit 8002 of the camera 8000 and the display unit 8102 of the viewfinder 8100. The camera 8000 may also have a built-in viewfinder.

[0459] Figure 24B shows the external appearance of the head-mounted display 8200.

[0460] The head-mounted display 8200 includes a mounting section 8201, lenses 8202, a main unit 8203, a display unit 8204, a cable 8205, etc. The mounting section 8201 also has a built-in battery 8206.

[0461] Cable 8205 supplies power from battery 8206 to main unit 8203. Main unit 8203 is equipped with a wireless receiver and can display received video information on display unit 8204. In addition, main unit 8203 is equipped with a camera and can use information about the user's eyeball or eyelid movements as an input means.

[0462] Furthermore, the attachment unit 8201 may be provided with multiple electrodes at a position that touches the user, capable of detecting the current flowing in accordance with the user's eye movements, and may have a function to recognize the user's gaze. It may also have a function to monitor the user's pulse rate based on the current flowing through the electrodes. In addition, the attachment unit 8201 may have various sensors such as a temperature sensor, a pressure sensor, and an acceleration sensor, and may have a function to display the user's biometric information on the display unit 8204, or a function to change the image displayed on the display unit 8204 in accordance with the user's head movements.

[0463] A display device according to one aspect of the present invention can be applied to the display unit 8204.

[0464] Figures 24C to 24E show the external appearance of the head-mounted display 8300. The head-mounted display 8300 includes a housing 8301, a display unit 8302, a band-shaped fixing device 8304, and a pair of lenses 8305.

[0465] The user can view the display on the display unit 8302 through the lens 8305. It is preferable to position the display unit 8302 in a curved shape, as this allows the user to experience a greater sense of presence. Furthermore, by viewing different images displayed in different areas of the display unit 8302 through the lens 8305, three-dimensional display using parallax can be performed. Note that the configuration is not limited to a single display unit 8302; two display units 8302 may be provided, with one display unit for each of the user's eyes.

[0466] A display device according to one embodiment of the present invention can be applied to the display unit 8302. The display device according to one embodiment of the present invention can also achieve extremely high resolution. For example, even when the display is magnified and viewed using the lens 8305 as shown in Figure 24E, the pixels are difficult for the user to see. In other words, the display unit 8302 can be used to allow the user to view a highly realistic image.

[0467] Figure 24F shows the external appearance of a goggle-type head-mounted display 8400. The head-mounted display 8400 has a pair of housings 8401, a mounting part 8402, and a cushioning member 8403. A display unit 8404 and a lens 8405 are provided inside each of the pair of housings 8401. By displaying different images on the pair of display units 8404, a three-dimensional display using parallax can be achieved.

[0468] The user can view the display unit 8404 through the lens 8405. The lens 8405 has a focus adjustment mechanism and its position can be adjusted according to the user's eyesight. The display unit 8404 is preferably a square or a horizontally elongated rectangle. This can enhance the sense of realism.

[0469] The mounting portion 8402 is preferably adjustable to the size of the user's face and has plasticity and elasticity to prevent it from slipping off. Furthermore, it is preferable that a part of the mounting portion 8402 has a vibration mechanism that functions as a bone conduction earphone. This eliminates the need for separate audio equipment such as earphones or speakers, allowing users to enjoy video and audio simply by wearing the device. The housing 8401 may also have a function to output audio data via wireless communication.

[0470] The mounting portion 8402 and the cushioning member 8403 are parts that come into contact with the user's face (forehead, cheeks, etc.). By ensuring that the cushioning member 8403 is in close contact with the user's face, light leakage can be prevented, thereby enhancing the sense of immersion. It is preferable to use a soft material for the cushioning member 8403 so that it adheres closely to the user's face when the user wears the head-mounted display 8400. For example, materials such as rubber, silicone rubber, urethane, and sponge can be used. Furthermore, if the surface of a sponge or similar material is covered with cloth, leather (genuine leather or synthetic leather), gaps are less likely to form between the user's face and the cushioning member 8403, effectively preventing light leakage. In addition, using such materials is preferable because it feels good against the skin and does not make the user feel cold when worn in cold seasons. It is preferable that the components that come into contact with the user's skin, such as the cushioning member 8403 or the mounting portion 8402, are removable, as this makes cleaning or replacement easier.

[0471] The electronic equipment shown in Figures 25A to 25F includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or operation switch), connection terminals 9006, sensors 9007 (including functions for detecting, detecting, or measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation), a microphone 9008, etc.

[0472] The electronic devices shown in Figures 25A to 25F have various functions. For example, they may have functions to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date or time, a function to control processing by various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. However, the functions of electronic devices are not limited to these and can have various functions. Electronic devices may have multiple display units. Furthermore, electronic devices may be equipped with a camera, etc., and have functions to capture still images or videos and save them to a recording medium (external or built into the camera), a function to display the captured images on a display unit, etc.

[0473] A display device according to one embodiment of the present invention can be applied to the display unit 9001.

[0474] Details of the electronic equipment shown in Figures 25A to 25F will be explained below.

[0475] Figure 25A is a perspective view showing a personal digital assistant (PDA) 9101. The PDA 9101 can be used, for example, as a smartphone. The PDA 9101 may also be equipped with a speaker 9003, connection terminals 9006, sensors 9007, etc. The PDA 9101 can also display text and image information on multiple surfaces. Figure 25A shows an example where three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming emails, SNS messages, and phone calls, the subject of emails and SNS messages, the sender's name, date and time, battery level, and antenna signal strength. Alternatively, icons 9050 or the like may be displayed in the location where the information 9051 is displayed.

[0476] Figure 25B is a perspective view showing the personal digital assistant (PDA) 9102. The PDA 9102 has the function of displaying information on three or more sides of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, a user can check information 9053, which is displayed in a position that can be observed from above the PDA 9102, while the PDA 9102 is stored in the breast pocket of their clothing. The user can check the display without taking the PDA 9102 out of their pocket and decide, for example, whether or not to answer a call.

[0477] Figure 25C is a perspective view showing a wristwatch-type personal information terminal 9200. The personal information terminal 9200 can be used, for example, as a smartwatch (registered trademark). The display unit 9001 has a curved display surface, allowing it to display information along the curved surface. The personal information terminal 9200 can also be used for hands-free calls by communicating with, for example, a wireless communication headset. Furthermore, the personal information terminal 9200 can transmit data to other information terminals and be charged via a connection terminal 9006. Charging may be performed by wireless power supply.

[0478] Figures 25D to 25F are perspective views showing a foldable portable information terminal 9201. Figure 25D shows the portable information terminal 9201 in an unfolded state, Figure 25F shows it in a folded state, and Figure 25E shows a perspective view of the state in between, transitioning from one of Figures 25D or 25F to the other. The portable information terminal 9201 offers excellent portability in its folded state and excellent readability of the display due to its seamless, wide display area in its unfolded state. The display unit 9001 of the portable information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm to 150 mm.

[0479] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., can be appropriately combined with other configuration examples or drawings, etc., at least in part.

[0480] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part. [Explanation of Symbols]

[0481] 100: Display device, 101: Substrate, 102G: Transistor, 102R: Transistor, 102S: Transistor, 102: Transistor, 103: Insulating layer, 110B: Light-emitting element, 110G: Light-emitting element, 110R: Light-emitting element, 110S: Photodetector, 110W: Light-emitting element, 110: Light-emitting element, 111B: Pixel electrode, 111G: Pixel electrode, 111R: Pixel electrode, 111S: Pixel electrode, 111: Pixel electrode, 112B: Organic layer, 112G: Organic layer, 112R: Organic layer, 112W: Organic layer, 112: Organic layer, 113: Common electrode, 114: Common layer, 121: Protective layer, 1 25: Insulating layer, 126: Resin layer, 128: Layer, 130: Aperture, 131: Insulating layer, 135: Spacer, 136: Light-shielding layer, 137: Lens, 138: Lens, 155: Organic layer, 160: Image subject, 161: Conductive layer, 163: Planarization layer, 170: Substrate, 171: Adhesive layer, 174B: Coloring layer, 174G: Coloring layer, 174R: Coloring layer, 181a: Reflected light, 181b: Reflected light, 181c: Reflected light, 182: Light, 200A: Display panel, 200B: Display panel, 200: Display panel, 201: Substrate, 202: Substrate, 203: Functional layer, 211B: Light-emitting element, 211G: Light-emitting element Child, 211IR: light-emitting element, 211R: light-emitting element, 211W: light-emitting element, 211X: light-emitting element, 211: light-emitting element, 212: light-receiving element, 213R: light-receiving element, 220: finger, 221: contact area, 222: fingerprint, 223: imaging area, 225: stylus, 226: trajectory, 252: transistor, 254: connection part, 258: transistor, 259: transistor, 260: transistor, 261: insulating layer, 262: insulating layer, 265: insulating layer, 268: insulating layer, 271: conductive layer, 272a: conductive layer, 272b: conductive layer, 273: conductive layer, 275: insulating layer, 278: connection Continuation, 281i: channel formation region, 281n: low resistance region, 281: semiconductor layer, 292: connection layer, 294: insulating layer, 370B: light-emitting element, 370G: light-emitting element, 370PD: photodetector, 370R: light-emitting element, 370SR: light-receiving element, 371: pixel electrode, 373: active layer, 375: common electrode, 377: first electrode, 378: second electrode, 380A: display device, 380B: display device, 380C: display device, 380D: display device, 380E: display device, 380F: display device, 381: hole injection layer, 382: hole transport layer, 383B: light-emitting layer, 383G: light-emitting layer,383R: Light-emitting layer, 383: Light-emitting layer, 384: Electron transport layer, 385: Electron injection layer, 389: Layer, 400: Display device, 411a: Conductive layer, 411b: Conductive layer, 411c: Conductive layer, 412G: Organic layer, 412S: Organic layer, 413: Common electrode, 414: Organic layer, 416: Protective layer, 417: Light-shielding layer, 418: Spacer, 421: Insulating layer, 422: Resin layer, 430b: Light-emitting element, 440: Photodetector, 442: Adhesive layer, 451: Substrate, 452: Substrate, 455: Adhesive layer, 462: Display unit, 464: Circuit, 465: Wiring, 466: Conductive layer, 472: FPC, 473: IC 6500: Electronic equipment, 6501: Housing, 6502: Display unit, 6503: Power button, 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 6510: Protective component, 6511: Display panel, 6512: Optical component, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 7000: Display unit, 7100: Television equipment, 7101: Housing, 7103: Stand, 7111: Remote control unit, 7200: Notebook personal computer, 7211: 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Housing, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 8000: Camera, 8001: Housing, 8002: Display unit, 8003: Operation buttons, 8004: Shutter button, 8006: Lens, 8100: Viewfinder, 8101: Housing, 8102: Display unit, 8103: Button, 8200: Head-mounted display, 8201: Wearing unit, 82 02: Lens, 8203: Main unit, 8204: Display unit, 8205: Cable, 8206: Battery, 8300: Head-mounted display, 8301: Housing, 8302: Display unit, 8304: Fixing device, 8305: Lens, 8400: Head-mounted display, 8401: Housing, 8402: Mounting part, 8403: Cushioning material, 8404: Display unit, 8405: Lens, 9000: Housing, 9001: Display unit, 9003: Speaker, 9005: Operation keys, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information,9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Mobile information terminal, 9102: Mobile information terminal, 9200: Mobile information terminal, 9201: Mobile information terminal,

Claims

[Claim 1] It has a light-emitting element that exhibits visible light, a pixel electrode, an organic layer, an electrode, a spacer, a protective layer, and a light-shielding layer. The organic layer is provided on the pixel electrode, The electrode has a portion that overlaps with the pixel electrode via the organic layer, The protective layer is provided covering the electrode, The spacer is transparent to visible light and has a portion that overlaps with the pixel electrode via the protective layer, the electrode, and the organic layer. The light-shielding layer is provided on the spacer and has an opening that overlaps with the pixel electrode. The aforementioned organic layer includes a photoelectric conversion layer. Display device.

Images