Semiconductor device, display device, and photoelectric converter

Abstract

The present invention provides a semiconductor device in which the leakage current between the lower electrode and the upper electrode is reduced. [Solution] One embodiment relates to a semiconductor device having a lower electrode, an insulating layer disposed to cover its end, an organic layer disposed on the lower electrode, and an upper electrode disposed on the organic layer, wherein the organic layer has a charge generation layer between two light-emitting layers, and in cross-section, the upper surface of the insulating layer has a groove, the groove has a bottom, a first steeply inclined portion that is inclined at an angle greater than 50° with respect to a parallel plane parallel to the lower surface of the lower electrode, and a first gently inclined portion disposed between the bottom and the first inclined portion that is inclined at an angle of 50° or less with respect to the parallel plane, and the height of the first steeply inclined portion is less than the length from the upper surface of the lower electrode to the lower surface of the charge generation layer in the region where the lower electrode and the organic layer are in contact.

Description

Technical Field

[0001] The present disclosure relates to, for example, semiconductor devices, display devices, photoelectric conversion devices, electronic devices, glasses, image forming devices, and moving bodies.

Background Art

[0002] As a device using an organic layer, a semiconductor device having a light-emitting element or a photoelectric conversion element has been proposed. A light-emitting element is an element having an upper electrode, a lower electrode, and an organic layer disposed therebetween, and emits light by exciting an organic compound contained in the organic layer. In recent years, devices equipped with organic light-emitting elements have attracted attention.

[0003] In a semiconductor device including an organic light-emitting element, there may be a case where a plurality of light-emitting elements have a common organic layer. In this configuration, current leakage through the organic layer between adjacent light-emitting elements is likely to occur. The leakage current between the light-emitting elements causes unintended light emission of the light-emitting elements. The unintended light emission of the light-emitting elements, for example, when the semiconductor device is used in a display device, narrows the color gamut representing the display performance of the display device. Also, in a single light-emitting element, when it is desired to emit light in a partial range of a continuous organic layer, the leakage current causes unintended light emission.

[0004] Patent Document 1 shows a light-emitting device including a tandem element in which a plurality of light-emitting units are stacked as an organic layer. Although the tandem element is advantageous for improving the light-emitting efficiency, leakage current is likely to occur between adjacent light-emitting elements through a charge generation layer having high conductivity. Patent Document 1 shows that in order to suppress the leakage current between the light-emitting elements, a recess is provided in a partition wall located between the respective lower electrodes.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Patent Document 2

[0006] The light-emitting element disclosed in Patent Document 1 has a deep recess, which makes it easy for the film thickness between the upper and lower electrodes to become thin, and leakage current is likely to occur between the upper electrode and the charge generation layer, and between the charge generation layer and the lower electrode. As a result, even when a signal is input to the light-emitting element for light emission, it may not emit light, which may reduce the luminous efficiency and gradation controllability.

[0007] One aspect of this disclosure provides a technique advantageous for suppressing leakage current between light-emitting elements and between the upper and lower electrodes. [Means for solving the problem]

[0008] One aspect of the present disclosure includes a lower electrode disposed on an element substrate, an insulating layer distributing on the element substrate and covering the end of the lower electrode, an organic layer disposed on the lower electrode and the insulating layer, and an upper electrode disposed on the lower electrode and the insulating layer with the organic layer in between, wherein the organic layer has a first light-emitting layer, a second light-emitting layer, and a charge-generating layer disposed between the first and second light-emitting layers, and in a cross-section passing through the lower electrode, the insulating layer and the organic layer, the upper surface of the insulating layer has grooves. The present invention relates to a semiconductor device having a groove portion having a bottom portion, a first steeply inclined portion that is inclined at an angle greater than 50° with respect to a parallel plane parallel to the lower surface of the lower electrode, and a first gently inclined portion disposed between the bottom portion and the first steeply inclined portion and inclined at an angle of 50° or less with respect to the parallel plane, wherein the length of the first steeply inclined portion in a first direction perpendicular to the parallel plane is smaller than the length in the first direction from the upper surface of the lower electrode to the lower surface of the charge generating layer in a first region where the lower electrode and the organic layer are in contact.

[0009] Another aspect of the present disclosure includes a lower electrode disposed on an element substrate, an insulating layer disposed on the element substrate covering the end of the lower electrode, an organic layer disposed on the lower electrode and the insulating layer, and an upper electrode disposed on the lower electrode and the insulating layer with the organic layer in between, wherein the organic layer has a first light-emitting layer, a second light-emitting layer, and a charge-generating layer disposed between the first and second light-emitting layers, and in a cross-section passing through the lower electrode, the insulating layer, and the organic layer, the upper surface of the insulating layer has a groove, and the groove is the bottom The present invention relates to a semiconductor device having a portion and a first steeply inclined portion that is inclined at an angle greater than 50° with respect to a parallel plane parallel to the lower surface of the lower electrode, wherein the length of the first steeply inclined portion in a first direction perpendicular to the parallel plane is smaller than the length in the first direction from the upper surface of the lower electrode to the lower surface of the charge generating layer in a first region where the lower electrode and the organic layer are in contact, and the ratio of the length of the groove portion in the first direction to the length of the opposing upper ends of the groove portion in a second direction parallel to the parallel plane is 3.6 or less. [Effects of the Invention]

[0010] This technology offers advantages in suppressing leakage current between light-emitting elements, as well as between the upper electrode and the charge generation layer, and between the charge generation layer and the lower electrode. [Brief explanation of the drawing]

[0011] [Figure 1] A schematic cross-sectional view of an example of a part of the semiconductor device of the embodiment. [Figure 2] A schematic plan view of an example of a part of the semiconductor device of the embodiment. [Figure 3] A schematic plan view of an example of a part of the display device of the embodiment. [Figure 4] A schematic cross-sectional view of an example of a part of the semiconductor device of the embodiment. [Figure 5] A schematic cross-sectional view of an example of a part of the semiconductor device of the embodiment. [Figure 6] A schematic cross-sectional view of an example of a part of the semiconductor device of the embodiment. [Figure 7]Explanatory diagram of vapor deposition simulation in the embodiment. [Figure 8] Explanatory diagram of vapor deposition simulation in the embodiment. [Figure 9] Explanatory diagram of vapor deposition simulation in the embodiment. [Figure 10] (a) - (d) Explanatory diagram of vapor deposition simulation in the embodiment. [Figure 11] Schematic diagram and circuit diagram of a part of the semiconductor device according to the embodiment. [Figure 12] Relationship diagram between the ratio of the distance D between the ends of the insulating layers on two adjacent lower electrodes and the layer thickness C of the organic layer in contact with the lower electrode, and the chromaticity of the red pixel. [Figure 13] Schematic diagram of a cross-section of an example of a part of the semiconductor device according to the embodiment. [Figure 14] Schematic cross-sectional view showing an example of a pixel of the display device according to the embodiment. [Figure 15] Schematic diagram showing an example of the display device according to the embodiment. [Figure 16] (a) Schematic diagram showing an example of the imaging device according to the embodiment. (b) Schematic diagram showing an example of the electronic device according to the embodiment. [Figure 17] (a) Schematic diagram showing an example of the display device according to the embodiment. (b) Schematic diagram showing an example of the foldable display device. [Figure 18] (a) Schematic diagram showing an example of the wearable device according to the embodiment. (b) Schematic diagram showing an example of the wearable device according to the embodiment, having an imaging device. [Figure 19] (a) Schematic diagram of the image forming device according to the embodiment. (b) And (c) Schematic diagrams showing a form in which a plurality of light emitting portions of the exposure light source are arranged on a long substrate. [Figure 20] Schematic diagram showing an example of an automobile having a vehicle lamp and a display unit according to the embodiment.

Embodiments for Carrying Out the Invention

[0012] The semiconductor device relating to this disclosure may be an organic light-emitting device, in which case the organic layer may, for example, have a light-emitting layer.

[0013] Hereinafter, specific embodiments of semiconductor devices and various devices having semiconductor devices relating to this disclosure will be described with reference to the attached drawings. In the following description and drawings, common components are denoted by the same reference numerals across multiple drawings. Therefore, common components will be described by referring to multiple drawings together, and descriptions of components denoted by the same reference numerals will be omitted as appropriate. Furthermore, descriptions of parts having similar functions, configurations, materials, effects, etc., will be omitted.

[0014] (First embodiment) An example of the configuration of a semiconductor device according to this embodiment will be described with reference to Figures 1 to 15. Here, a light-emitting device having an organic light-emitting element will be described as an example of a semiconductor device.

[0015] Figure 1 is a schematic cross-sectional view of a part of the light-emitting device according to this embodiment. Figure 2 is a schematic plan view of a part of the light-emitting device according to this embodiment, and Figure 1 is a schematic cross-sectional view of the light-emitting device at line segment AA' in Figure 2. Figure 3 is a schematic plan view of a display device having the semiconductor device of this embodiment.

[0016] In this specification, "upper" and "lower" refer to the upper and lower surfaces in Figure 1. The surface of the element substrate 1 on which the lower electrode 2 and other components are located is called the upper surface of the element substrate 1. The surface of the lower electrode 2 that faces the element substrate 1 is called the lower surface of the lower electrode 2. Therefore, for example, if a plug or the like for connecting to other wiring is connected to the lower surface of the lower electrode 2, the substantially flat portion excluding that part is considered the lower surface.

[0017] Furthermore, the main surface of the element substrate 1 refers to the surface (top surface) on which the lower electrode 2 etc. are arranged. Also, if the main surface of the element substrate 1 (the surface on which the lower electrode 2 is arranged) has irregularities, the surface parallel to the main surface of the element substrate 1 refers to the surface parallel to the surface of the lower electrode 2 facing the element substrate 1 (bottom surface). In addition, if the semiconductor device has a reflective layer, the surface of the element substrate 1 refers to the surface on which the reflective layer is arranged, and the surface parallel to the main surface of the element substrate 1 may be the surface parallel to the surface of the reflective layer facing the element substrate 1 (bottom surface).

[0018] In Figure 3, the display device 3000 has a display area 3001 and a peripheral area 3002. Multiple pixels, each having a light-emitting element, are arranged in a two-dimensional manner in the display area 3001. Vertical scanning circuits, horizontal scanning circuits, timing generators, etc., for driving the multiple pixels may be arranged in the peripheral area 3002. In addition, terminals for external connections may be provided in the peripheral area 3002, and the display area 3001 may be electrically connected to a substrate having vertical scanning circuits, horizontal scanning circuits, timing generators, etc. Figure 2 is an enlarged view of a part of the display area 3001 in Figure 3.

[0019] The semiconductor device of this embodiment includes a lower electrode 2 disposed on an element substrate 1, an insulating layer 3 that covers the end of the lower electrode 2 and is disposed on the element substrate 1, and an organic layer 40 disposed on the lower electrode 2 and the insulating layer 33. The semiconductor device also has an upper electrode 5 disposed on the lower electrode 2 and the insulating layer 33 with the organic layer 40 in between. The organic layer 40 includes a first organic layer 41 having a first light-emitting layer 45, a second organic layer 43 having a second light-emitting layer, and a charge-generating layer 42 disposed between the first organic layer 41 having the first light-emitting layer and the second organic layer 42 having the second light-emitting layer.

[0020] Figure 1 is a cross-section passing through the first electrode 2, the insulating layer 3, and the organic layer 40, and in Figure 1, the upper surface of the insulating layer 3 has a groove 320.

[0021] The semiconductor device of this embodiment will be described in detail with reference to Figure 1. The element substrate 1 may have wiring 21, plugs, and an interlayer insulating film 22, etc., arranged on the substrate SUB. A reflective layer 102 and a conductive layer 103 are arranged on the main surface of the element substrate 1 (in this case, on the main surface of the interlayer insulating film 22). Here, the reflective layer 102 and the conductive layer 103 are referred to as the reflective member 105.

[0022] An insulating layer 31 is placed on the reflective member 105, and an insulating layer 32 is placed on the insulating layer 31 and the reflective member 105. Furthermore, an insulating layer 33 is placed on the insulating layer 32, the insulating layer 31, and the reflective member 105. The insulating layers 31, 32, and 33 can function individually or in combination as optical adjustment layers in the optical interference structure. Here, the insulating layers 31, 32, and 33 are collectively referred to as insulating layer 30. Details of the interference structure will be described later, but the number of insulating layers that function as optical adjustment layers may differ depending on the pixel.

[0023] A conductive layer, which functions as a lower electrode 2, is placed on top of the insulating layer 30 and is electrically connected to the reflective member 105. The lower electrode 2 has a transmittance to light emitted by the light-emitting element that is higher than its reflectance. The insulating layer 3 covers the end of the lower electrode 2 and is placed on the element substrate 1 (in this case, on top of the insulating layer 30). The insulating layer 3 has an opening above the lower electrode 2, and the organic layer 40 is placed above the lower electrode 2 at the opening and above the insulating layer 3, so that the lower electrode is placed on top of the organic layer 40.

[0024] The organic layer 40 includes a charge transport layer 44 in contact with the lower electrode 2 and the insulating layer 3, and a first organic layer 41 disposed on the charge transport layer 44 and having a first light-emitting layer 45. The organic layer 40 also includes a charge generation layer 42 disposed on the first organic layer 41, and a second organic layer 43 disposed on the charge generation layer 42 and having a second light-emitting layer.

[0025] An upper electrode 5 is placed on the organic layer 40. The upper electrode 5 may be connected in the peripheral region 3002 to a conductive layer made of the same layer as the lower electrode 2. An insulating layer 6 is placed over the lower electrode, and an insulating layer 7 may be placed on top of the insulating layer 6. The insulating layer 6 may function as a protective layer, and the insulating layer 7 may function as a planarizing layer. More detailed information about the semiconductor device of this embodiment will be described later.

[0026] Figure 4 is a cross-sectional view of an example of a part of a semiconductor device, enlarged from the dotted line X in Figure 1. In a cross-section taken perpendicular to the stretching direction of the groove 320, passing through the element substrate 1, the insulating layer 3, and the organic layer 40, the upper surface of the insulating layer 3 has the groove 320.

[0027] The groove 320 is a recessed portion on the upper surface of the insulating layer 3, and when viewed in plan, it is a portion where the recess extends in a certain direction (extension direction).

[0028] The groove 320 has a first steeply inclined portion 321 that is inclined at an angle greater than 50° with respect to a parallel plane parallel to the lower surface of the lower electrode 2, and a bottom portion 323. Here, the bottom portion 323 is the portion in cross-section where the upper surface is inclined at an angle of less than 10° with respect to the parallel plane.

[0029] For example, depending on the film deposition method, such as vapor deposition, the steeper the inclination with respect to the parallel surface, the thinner the film thickness deposited on the inclined portion. Therefore, by having a first steeply inclined portion 321 in the groove portion 320, the highly conductive charge generation layer 42 can be made into a thin film, and leakage current between light-emitting elements can be suppressed.

[0030] Furthermore, the groove 320 may have a first gently sloping portion 322 between its bottom 323 and the first steeply sloping portion 321 and the bottom 323, which is inclined at an angle of 50° or less with respect to a parallel plane. As will be described in detail later with reference to Figures 10(a) and 10(b), the presence of the first gently sloping portion 322 effectively suppresses the thickness of the charge generation layer. Therefore, leakage current between light-emitting elements via the charge generation layer can be suppressed.

[0031] Here, we show an example where the surface of the first steeply inclined section 321 is inclined at an angle greater than 50° with respect to the parallel plane. Figure 4 shows an example where the first steeply inclined section 321 and the first gently inclined section 322 each have a constant inclination angle, but the inclination angle may change within each inclined section. For example, if the inclination angle changes continuously from the first steeply inclined section 321 to the second gently inclined section 322, the point with an inclination angle of 50° becomes the boundary between the steeply inclined section 321 and the gently inclined section 322.

[0032] The length D of the first steeply inclined portion 321 in the direction perpendicular to the parallel plane parallel to the lower surface of the lower electrode 2 (first direction) is smaller than the length C in the first direction from the upper surface of the lower electrode 2 to the lower surface of the charge generation layer 42 in the first region 2001 where the lower electrode 2 and the organic layer 40 are in contact.

[0033] We will now consider the case where the length D of the first steeply sloped portion 321 in the first direction is greater than the thickness of the first organic layer 41 (length C in the first direction from the upper surface of the lower electrode 2 to the lower surface of the charge generation layer 42 in the first region 2001). In this case, a portion of the first organic layer 41 becomes thinner along the first steeply sloped portion 321, which is likely to cause leakage current between the lower electrode 2 and the charge generation layer 42.

[0034] On the other hand, in the semiconductor device of this embodiment, in the first direction, the length D of the first steeply inclined portion 321 is smaller than the thickness (corresponding to the length C) of the first organic layer. As a result, the thickness of the first organic layer 41 disposed on the first gently inclined portion 322 fills the first steeply inclined portion 321, thus preventing the first organic layer 41 from becoming too thin in the first steeply inclined portion 321. Therefore, leakage current between the lower electrode and the charge generation layer can be suppressed.

[0035] Even if the first steeply inclined portion 321 has a surface portion of the insulating layer 3 with a reverse taper of 90° or more, it is easier to thin the charge generating layer 42. Also, if the steeply inclined portion 321 is less than 90°, the thickness of the first organic layer and the second organic layer in the groove portion does not tend to become thin. Therefore, it is preferable that the insulating layer 3 has a steeply inclined portion that is inclined at an angle greater than 90°.

[0036] Furthermore, instead of a step with a steep inclination on only one side (only the second steep inclination 324) as shown in Figure 5(b), the groove is made such that the first steep inclination 321 and the second steep inclination 324 face each other, as shown in Figure 5(a). This makes it possible to limit the amount of deposited particles 400 that penetrate into the groove 320, and makes it easier to thin the layer thickness of the charge generation layer in the groove 320. In other words, it is preferable that the groove 320 has a second steep inclination 324 in a cross-section that is inclined at an angle greater than 50° with respect to a parallel plane, at a position facing the first steep inclination 321.

[0037] The manufacturing method for the semiconductor device 10 of the first embodiment can use the same process as in prior art document 2.

[0038] To obtain insights into the preferred inclination angle of the inclined portion in this embodiment, a film deposition simulation was performed using the vapor deposition method. Figure 7(a) shows the arrangement of each component during the vapor deposition simulation. The positions of the vapor deposition source 2010, substrate 2020, and vapor deposition area 2030 on substrate 2020 were set as shown in Figure 7, with distance R=200mm, distance r=95mm, and height h=340mm.

[0039] The n representing the deposition distribution, as shown in equation (1) below, was set to n=2. φ = φ0cos n α (1) Here, α is the angle, φ is the vapor flux density at angle α, and φ0 is the vapor flux density at α=0. It is also assumed that substrate 2020 rotates around its center. R is the distance from the center of rotation of the substrate to the center of gravity of the deposition source in the horizontal direction (parallel to the floor of the deposition apparatus). Distance r is the distance from the center of rotation of the substrate to the center of gravity of the deposition area in the horizontal direction. Height is the distance from the opening of the deposition source (where the deposition material is released) to the deposition position of the deposition area in the vertical direction (perpendicular to the floor of the deposition apparatus).

[0040] Assuming that the insulating layer in the deposition region 2030 on the substrate has sloped sections with inclination angles from 0° to 90°, and with a layer thickness of 76 nm for the organic layer at a slope angle of 0°, the layer thickness of the organic layer along the sloped section was calculated for each slope angle.

[0041] Figure 7(b) shows the results of the film deposition simulation. From this, it can be seen that when the inclination angle is greater than 50°, the layer thickness of the organic layer region along the inclined portion tends to be thinner, and when the inclination angle is 50° or less, the layer thickness of the organic layer region along the inclined portion tends to be thicker. Therefore, it is preferable that the inclination angle of the steeply inclined portion 321 in this embodiment is greater than 50 degrees and less than 180 degrees. More preferably, it is 70 degrees or more and less than 180 degrees. This makes it possible to thin the charge generation layer and suppress the crosstalk current (leakage current) between light-emitting elements.

[0042] As shown in Figure 4, the groove 320 may have a second steeply inclined portion 324 that is inclined at an angle greater than 50° with respect to a parallel plane, opposite to the first steeply inclined portion 321. Alternatively, there may be a second gently inclined portion 324 between the second steeply inclined portion 324 and the bottom portion 323 that is inclined at an angle of 50° or less with respect to a parallel plane. This allows the effect of combining the gently inclined portion between the steeply inclined portion and the bottom portion to be enjoyed for a wider variety of incident directions of the deposited particles.

[0043] As shown in the cross-sectional view of Figure 4, the width W of the groove may be greater than twice the length C in the first direction from the upper surface of the lower electrode 2 to the lower surface of the charge generation layer 42 in the first region 2001. The width W of the groove is the length in the second direction parallel to the parallel plane between the left and right ends of the recess relative to the flat portion 340 in a cross-section of the groove 320 cut perpendicular to the extension direction. If the groove 320 has an inclined portion, the width W of the groove is the length in the second direction between the opposing upper ends of the groove 320.

[0044] This makes it difficult for the grooves 320 to be filled by the first organic layer 41. If the depressions in the grooves 320 are filled by the first organic layer 41, it becomes difficult to thin the charge generation layer 42 formed on top of them, making it difficult to suppress leakage current between light-emitting elements. Therefore, by setting the width W of the grooves 320 to the length shown in this embodiment, leakage current between light-emitting elements can be effectively suppressed.

[0045] As shown in the cross-sectional view of Figure 4, the bottom 323 of the groove 320 may be a flat portion. A flat portion is a portion that is approximately parallel to the lower surface of the lower electrode 2. Approximately parallel means parallel with an error of about 10°. This prevents the first organic layer 41 from becoming too thin in the groove.

[0046] As shown in the cross-sectional view of Figure 6, in a given cross-section, the thinnest layer thickness G of the charge generation layer 42 formed along the first steeply inclined portion 321 of the groove 320 and the thinnest layer thickness H of the charge generation layer 42 formed along the second steeply inclined portion 324 may be different. This structure can be formed by using a deposition method while rotating the wafer and positioning the grooves far from the center of rotation.

[0047] When using a deposition method that involves rotating the wafer, and positioning the groove 320 at the center of rotation, the layer thickness G and layer thickness H tend to be the same. However, having different layer thicknesses G and H makes it easier to thin one of the layers. For example, when the charge generation layer is thinned in one of the two opposing inclined sections of the groove 320, if there are areas where the charge generation layer 42 is deposited discretely, those areas will have significantly higher resistance. Therefore, even if the charge generation layer is thickened in the other inclined section, a significant effect in suppressing leakage current between light-emitting elements can be obtained. Furthermore, due to its structure, the groove 320 has opposing inclined sections, making it easy to create the layer thickness relationship described above.

[0048] The ratio of the length of the first steeply inclined portion 321 in the first direction perpendicular to the parallel plane to the length of the first region 2001 from the upper surface of the lower electrode 2 to the lower surface of the charge generation layer 42 may be less than 1.5. The results of the deposition simulation that support this are shown below. Here, the simulation was performed for an example in which the charge generation layer has both an electron-donating charge generation layer and an electron-accepting charge generation layer.

[0049] The positions of the evaporation source 2010, the substrate 2020, and the evaporation region 2030 located on the substrate were set as shown in Figure 7(a), with R=200mm, r=79mm, and h=340mm.

[0050] The n representing the deposition distribution, as shown in equation (1) below, was set to n=2. φ = φ0cos n α (1) Substrate 2020 was designed to rotate at its center. It was also assumed that particles would migrate after impact with the substrate.

[0051] Grooves were arranged in the insulating layer of the deposition region 2030 as shown in Figure 8. Deposition simulations were also performed on grooves G1 to G7 with the inclination angles and dimensions shown in Table 1. Grooves G1 to G7 do not have gently sloping sections, and their depths or widths differ from each other. The layer thicknesses perpendicular to the parallel surface deposited on the flat section 340 were set as follows: the first organic layer 41 was 68.8 nm, the electron-donating charge generation layer was 8.8 nm, the electron-accepting charge generation layer was 7.4 nm, and the second organic layer 43 was 60.5 nm.

[0052] [Table 1]

[0053] Figure 9 shows the results of a deposition simulation of the groove in G1, which is a laminated film in which a first organic layer 41, an electron-donating charge generation layer 42N, an electron-accepting charge generation layer 42P, and a second organic layer 43 are deposited on an insulating layer 3 in that order. The minimum thickness of the charge generation layer is the value obtained by equation (2). At this time, the minimum thickness of the electron-donating charge generation layer on the first steep slope 321 side is N1, the minimum thickness of the electron-accepting charge generation layer is P1, the minimum thickness of the electron-donating charge generation layer on the second steep slope 324 side is N2, and the minimum thickness of the electron-accepting charge generation layer is P2. Minimum thickness of the charge generation layer = {(N1+P1)+(N2+P2)} / 2 (2) Figure 10(a) shows the results of the deposition simulation for grooves G1-G7. C / D1 is the ratio of the vertical thickness C of the first organic layer to the vertical length D1 of the steeply sloped section. From this, it can be seen that when C / D1 is less than 1.5, the thickness of the charge generation layer can be kept small, and the effect of suppressing leakage current between light-emitting elements is significant.

[0054] Furthermore, deposition simulations were performed on grooves G8 to G16 with the inclination angles and dimensions shown in Table 2. Other calculation conditions were the same as for G1 to G7. Unlike G1 to G7, G8 to G16 have a gently sloping section between the flat section and the steeply sloping section. The results of the deposition simulation for grooves G8 to G16 are shown in Figure 10(b). From this, as with Figure 10(a), it can be seen that when C / D1 is less than 1.5, the layer thickness of the charge generation layer can be kept small, and the effect of suppressing leakage current between light-emitting elements is significant.

[0055] It can be seen that the slope of the graph in Figure 10(b) is greater than the slope of the graph in Figure 10(a). This means that having a gently sloping section between the flat section and the steeply sloping section has a greater effect in reducing the thickness of the charge generation layer.

[0056] [Table 2]

[0057] The first gently sloping section 322 may have a portion that is inclined at an angle of 18° or more with respect to a parallel plane. The results of the deposition simulation that support this are shown below.

[0058] Figure 11(c) shows the results of deposition simulations for G8, G11, and G12. This shows the θ2 dependence of the minimum thickness of the charge generation layer by fixing the length D1 and width W of the steep slope in the first direction of the groove and changing the length D2 in the first direction of the gently sloping section and the length (width) W1 in the second direction of the flat section. The results show that when θ2 is 18° or greater, the effect of reducing the thickness of the charge generation layer, that is, the effect of suppressing leakage current between light-emitting elements, becomes larger.

[0059] Furthermore, the semiconductor device of this embodiment may have a groove width-to-depth ratio of 3.6 or less. The results of the deposition simulation supporting this are shown below.

[0060] Vapor deposition simulations were performed on grooves G17 to G19 with the inclination angles and dimensions shown in Table 3. Grooves G17 to G19 differ from groove G3 in both the width W of the groove and the width W1 of the flat section of the groove. Other calculation conditions were the same as for G1 to G7.

[0061] [Table 3]

[0062] Figure 10(d) shows the results of the deposition simulation for G3, G17-G19. From these results, it can be seen that the minimum thickness of the charge generation layer can be kept small when the ratio of the groove width W to the groove depth D is 3.6 or less, meaning that the effect of suppressing leakage current between light-emitting elements is significant.

[0063] In the light-emitting device shown in Figure 11, the resistance per unit area in the direction parallel to the lower surface of the lower electrode 2 of the organic layer 40 is r(D / C). From this, if we let IR be the current flowing through the light-emitting element 10R and IG be the current flowing through the light-emitting element 10G, the following relationship holds. IG / IR = 1 / (1+D / C) (2) From the above equation, it can be seen that the current flowing through the light-emitting element 10R and the current flowing through the light-emitting element 10G are proportional, with the thickness C and distance D of the organic layer 40 as coefficients. In other words, even if you try to make only the red light-emitting element 10R emit light, current will also flow to the green light-emitting element 10G and it will emit light as well, and this depends on the D / C ratio.

[0064] When the same amount of current is used to emit light, if the emission spectrum of only the red light-emitting element 10R is denoted as SR and the emission spectrum of only the green light-emitting element 10G is denoted as SG, the emission spectrum SR+G, considering the leakage current between the lower electrodes 2, is given by the following equation (3). SR + G = SR + SG(IG / IR) (3) Figure 9 shows a graph with the x-value on the vertical axis and the ratio D / C on the horizontal axis, calculated as the chromaticity coordinate in the CIExy space of the emission spectrum SR+G. In Figure 9, a change in the x-coordinate means that green light is also being emitted, even though red light emission is intended. In other words, in Figure 12, a low x-coordinate indicates that leakage current is occurring to the adjacent pixel. When the ratio D / C is 50 or higher, the x-value hardly changes. This means that even if there is no slope in the insulating layer 3 and leakage current is likely to occur between the lower electrodes 2, when the ratio D / C is 50 or higher, the leakage current between the lower electrodes 2 may not be a problem.

[0065] On the other hand, when the ratio D / C is less than 50, the x value decreases significantly, and the decrease in the purity of the red color is pronounced, indicating that the leakage current between the lower electrodes 2 is affecting the color purity. In other words, when the ratio D / C is less than 50, the density of the light-emitting elements is high, so the effect of the leakage current between the lower electrodes 2 on the light-emitting device becomes significant. Therefore, when the D / C is less than 50, the effect of suppressing the leakage current between the lower electrodes 2 is particularly high.

[0066] Next, a structure that takes into account the optical interference of the light-emitting element will be described. The optical distance between the upper electrode 5 and the lower electrode 2 of the light-emitting device 100 according to this embodiment may be a constructive interference structure. A constructive interference structure can also be called a resonant structure.

[0067] In the light-emitting element 10, by forming multiple layers within the organic layer 4 to satisfy the conditions for constructive optical interference, the light extracted from the light-emitting device can be strengthened by optical interference. If the optical conditions are set to strengthen the light extracted in the forward direction, light can be emitted in the forward direction with higher efficiency. Furthermore, it is known that the half-width of the emission spectrum of light strengthened by optical interference is smaller than that of the emission spectrum before interference. In other words, the color purity can be increased.

[0068] When designed for light of wavelength λ, constructive interference can be achieved by adjusting the distance d0 from the light emission position of the light-emitting layer to the reflective surface of the light-reflecting material to d0 = iλ / 4n0 (i = 1, 3, 5, ...).

[0069] As a result, the radiation distribution of light at wavelength λ has a larger component in the forward direction, improving the frontal brightness. Note that n0 is the refractive index at wavelength λ of the layer from the emission position to the reflective surface.

[0070] The optical distance Lr from the light emission position to the reflective surface of the light-reflecting electrode is given by the following equation (4), where φr [rad] is the sum of the phase shifts when light of wavelength λ is reflected at the reflective surface. Note that the optical distance L is the sum of the products of the refractive index nj and the thickness dj of each layer in the organic layer. That is, L can be expressed as Σnj × dj, and also as n0 × d0. Note that φ is a negative value. Lr = (2m - (φr / π)) × (λ / 4) (4) In equation (4) above, m is a non-negative integer. Note that when φ = -π and m = 0, L = λ / 4, and when m = 1, L = 3λ / 4. Hereafter, the condition for m = 0 in the above equation will be referred to as the λ / 4 interference condition, and the condition for m = 1 in the above equation will be referred to as the 3λ / 4 interference condition.

[0071] The optical distance Ls from the light emission position to the reflective surface of the light extraction electrode is given by the following equation (5), where φs [rad] is the sum of the phase shifts when light of wavelength λ is reflected at the emission surface. In equation (5) below, m' is a non-negative integer. Ls=(2m'-(φs / π))×(λ / 4)=-(φs / π)×(λ / 4) (5) Therefore, the total layer interference L is given by equation (6) below. L=(Lr+Ls)=(2m-(φ / π))×(λ / 4) (6) Here, φ is the sum of the phase shifts (φr + φs) when light of wavelength λ is reflected by the light-reflecting electrode and the light-extracting electrode.

[0072] In this case, when considering the viewing angle characteristics, which are in a trade-off relationship with the front extraction efficiency, etc., in actual light-emitting devices, it is not necessary to strictly match the above formula. Specifically, there may be an error of L within the range of ±λ / 8 of the value that satisfies formula (6). The allowable range for the value of L to deviate from the interference conditions may be 50 nm to 75 nm.

[0073] Therefore, in the organic light-emitting device according to the present invention, it is preferable that the following formula (7) is satisfied. More preferably, L is within the range of ±λ / 16 from the value satisfying formula (6), and it is preferable that the following formula (7') is satisfied. (λ / 8) × (4m - (2φ / π) - 1) <L<(λ / 8)×(4m-(2φ / π)+1) (7) (λ / 16) × (8m - (4φ / π) - 1) <L<(λ / 16)×(8m-(4φ / π)+1) (7’) It is preferable that the light-emitting element 10 has optical interference conditions of λ / 4, where m=0 and m'=0 in equations (7) and (7'). In that case, equations (7) and (7') are expressed as equations (8) and (8'). (λ / 8) × (-(2φ / π)-1) <L<(λ / 8)×(-(2φ / π)+1) (8) (λ / 16) × (-(4φ / π)-1) <L<(λ / 16)×(-(4φ / π)+1) (8’) In equations (7) and (7'), when m=0 and m'=0, the thickness of the organic layer 40 becomes the thinnest in the constructive interference structure. This lowers the driving voltage of the light-emitting element 10, enabling higher brightness emission within the upper limit of the power supply voltage. When the organic layer 40 is thin, leakage current is more likely to occur between the upper electrode 5 and the lower electrode 2. Therefore, the organic layer 4 cannot be easily thinned by utilizing the gradient of the insulating layer 3. Thus, by satisfying the requirements described in this embodiment, it is possible to suppress the leakage current between the upper electrode 5 and the lower electrode 2 while also sufficiently suppressing the leakage current between the lower electrodes 2.

[0074] Here, the emission wavelength λ may be the emission wavelength of the maximum peak in the emission spectrum emitted by the emission layer. In the emission of organic compounds, the maximum peak is generally the wavelength of the minimum peak in the emission spectrum, so it may also be the wavelength of the minimum peak.

[0075] Furthermore, the thickness of the organic layer 40 in the portion that contacts the lower electrode 2, in the direction perpendicular to the lower surface of the lower electrode 2, is preferably less than 200 nm. This makes it easier to reduce the driving voltage of the semiconductor device. In addition, the effect of this embodiment, which allows for the suppression of leakage current between the lower electrodes 2 while suppressing leakage current between the upper electrode 5 and the lower electrode 2, is greatly enhanced.

[0076] Next, a preferred embodiment of this model will be further described using Figure 4.

[0077] The organic layer 40 comprises a first organic layer 41, a charge generation layer 42, and a second organic layer 43. The first organic layer 41 has a charge transport layer 44 and a first light-emitting layer 45 at its bottom. That is, the boundary between the charge generation layer 44 and the upper first organic layer 45 is the bottom surface of the first light-emitting layer. The second organic layer 43 also has a second light-emitting layer. In addition to the above, the first organic layer 41 and the second organic layer 43 may also have a charge injection layer, a charge blocking layer, etc. The second organic layer may also have a charge transport layer.

[0078] In this embodiment, the lower electrode 2 has a contact portion 2301 on its upper surface that is in contact with the organic layer 40. Figure 4 shows an example where the contact portion 2301 is uniformly flat, but a portion of the lower electrode 2 may be removed along the side surface of the insulating layer 3, resulting in a non-flat portion. The flat portion is a portion that is substantially parallel to the lower surface of the lower electrode 2 (the main surface of the substrate) and has an inclination angle of 0°. The insulating layer 3 also has a third steeply inclined portion 311 in the second region 2002 between the first region 2001 and the groove portion 320, which is inclined at an angle greater than 50° with respect to the lower surface of the lower electrode 2.

[0079] In this embodiment, the length B of the third steeply inclined portion 311 in the first direction is greater than the length A (thickness of the charge transport layer 44) in the first direction from the lower electrode 2 to the first light-emitting layer 45 in the first region 2001. As a result, the charge transport layer 44 is thinned along the third steeply inclined portion 311, which suppresses the transport of charge from the third steeply inclined portion 311 towards the groove 320 in Figure 4.

[0080] If the thickness of the charge transport layer 44 is greater than the length B of the third steeply inclined portion 311 in the first direction, the third steeply inclined portion 311 may become embedded in the charge transport layer 44, and the thickness of the charge transport layer 44 on the third steeply inclined portion 311 may not be sufficiently reduced. In that case, because the charge transport layer 44 has high charge transport properties, charge is more easily transported in the direction of the groove 320 when viewed from the third steeply inclined portion 311 in Figure 4.

[0081] On the other hand, in the semiconductor device of this embodiment, the length B of the third steeply inclined portion 311 in the first direction is greater than the thickness of the charge transport layer 44 in the first region 2001. Therefore, the thickness of the charge transport layer 44 becomes smaller in the portion in contact with the third inclined portion 311, which is preferable because it can suppress leakage current between light-emitting elements.

[0082] Furthermore, in this embodiment, the length B of the lower electrode 2 of the third steeply inclined portion 311 in the first direction is smaller than the length C (thickness of the first organic layer 41) of the lower electrode 2 to the charge generation layer 42 in the first region 2001 in the first direction. This prevents the third steeply inclined portion 311 from being embedded in the first organic layer 41 and prevents the first organic layer 41 from becoming too thin along the third steeply inclined portion 311. If leakage current flows between the lower electrode 2 and the charge generation layer 42, it causes a decrease in luminous efficiency, but the semiconductor device of this embodiment can suppress leakage current between the lower electrode 2 and the charge generation layer 42, and therefore can suppress a decrease in luminous efficiency.

[0083] Furthermore, in this embodiment, the insulating layer 3 has a groove 320 located further away from the third steeply inclined portion 311 than the position where the lower electrode 2 and the organic layer 40 are in contact (first region 2001). The length D (depth of the groove) of the groove 320 in a second direction perpendicular to the plane parallel to the lower surface of the lower electrode 2 is greater than the length B of the third steeply inclined portion 311 in the first direction. As a result, the charge generation layer 42 is thinned in the groove 320, thereby suppressing the generation and transport of charge in the direction of adjacent pixels as viewed from the groove 320.

[0084] In this case, the thickness of the first organic layer 41 is also thinned in the groove 320, but because the charge transport layer is thinned in the third steeply inclined section 311, the amount of charge reaching from the lower electrode 2 to the groove 320 is reduced, and therefore the leakage current between the lower electrode 2 and the charge generation layer 42 in the groove 320 is suppressed.

[0085] Furthermore, in this embodiment, the length D of the groove 320 in the second direction is smaller than the length E (thickness of the organic layer 40) of the organic layer 40 in the first region 2001 in the first direction. As a result, the groove 320 is embedded in the second organic layer 43, and the second organic layer 43 does not become too thin along the groove 320, thereby suppressing leakage current between the charge generation layer 42 and the upper electrode 5.

[0086] Furthermore, it is preferable that the length D of the groove 320 in the second direction is greater than the length C in the first direction from the lower electrode 2 to the charge generation layer 42 in the first region 2001. This makes it easier for the charge generation layer 42 to be thinned in the groove 320.

[0087] The distance between the light-emitting region 101 and the light-emitting region 201 of the light-emitting element is preferably within 10 μm, more preferably within 5 μm. In such a high-resolution pixel arrangement, the crosstalk current between organic EL elements tends to be large, and therefore the effects of this embodiment tend to be greater.

[0088] As shown in Figure 4, the insulating layer has a fourth gently sloping portion 330 between the groove portion 320 and the third steeply sloping portion 311, and the length F of the fourth gently sloping portion in the first direction is greater than the length B of the first region 2001 from the lower electrode 2 to the charge generation layer 42 in the first direction. This allows the charge transport layer 44 and the charge generation layer 42 to be made thinner over a long distance than in the flat areas of the insulating layer 3, without making the first organic layer 41 and the second organic layer 43 too thin. Therefore, leakage current between adjacent light-emitting elements can be suppressed. Here, the gently sloping portion is the surface portion of the insulating layer 3 whose surface is sloped at an angle ranging from 0° to 50° with respect to a parallel plane parallel to the lower surface of the lower electrode 2.

[0089] The third steeply inclined portion 311 is preferably located at the end of the insulating layer 3. By having the end of the insulating layer 3 also serve as the third steeply inclined portion 311, space can be saved, which is advantageous for miniaturizing pixels. Furthermore, light emission on the insulating layer 3 is affected because the length of the reflective layer 102 and the light-emitting layer in the first direction is not suitable for optical interference, resulting in the emission of light of a different wavelength than desired, which reduces color purity. By having the end of the insulating layer 3 also serve as the third steeply inclined portion 311, the third steeply inclined portion 311 can be positioned closer to the first region 2001. The closer the third steeply inclined portion 311 is to the first region 2001, the less likely it is that charge will be transported onto the insulating layer 3 via the charge transport layer 44, thus suppressing the emission of light of a different wavelength than desired on the insulating layer 3, which is preferable.

[0090] Furthermore, in the cross-sectional view of Figure 1, the length G from the groove 320 to the position closest to the contact portion 2301 (first region) in the second direction parallel to the lower surface of the lower electrode 2 is smaller than the length H from the position closest to the contact portion 2301 of the groove 320 to the intermediate position between adjacent light-emitting elements. As a result, the distance from the contact portion 2301 to the groove 320 is shortened, which narrows the range in which light emission can occur on the insulating layer 3, thereby suppressing a decrease in color purity. Here, the intermediate position between adjacent pixels refers to the midpoint of the centroids of the lower electrodes 2 of adjacent light-emitting elements in the second direction parallel to the lower surface of the lower electrode 2.

[0091] It is preferable that both the third steeply inclined portion 311 and the groove portion 320 overlap with the lower electrode 2 in a plan view with respect to a plane parallel to the lower surface of the lower electrode 2. As a result, when an electric field generated by the potential difference between the lower electrode 2 and the upper electrode 5 is applied to the organic layer 40 thinned by the groove portion 320, recombination of charges moving toward adjacent light-emitting elements through the organic layer 40 is promoted. Therefore, the charge moving between adjacent light-emitting elements can be reduced, and leakage current between adjacent light-emitting elements can be suppressed.

[0092] In the cross-sectional view of Figure 1, it is preferable that the vertices of the first region 2001 and the microlens 232 overlap in a plan view. Furthermore, it is preferable that the inclination angle Φk is larger than the inclination angle Φj. Here, the inclination angle Φj refers to the inclination angle with respect to a parallel plane parallel to the lower surface of the lower electrode 2 at position J of the microlens surface directly above the end of the contact portion 2301. The inclination angle Φk refers to the inclination angle with respect to the parallel plane at position K of the microlens surface directly above the position of the groove portion 320 closest to the contact portion 2301. The reasons for this will be explained below.

[0093] If guided light in a direction parallel to the parallel plane is scattered by the third steeply inclined section 311 or the groove section 320, optical interference may not be properly set, and light of a different wavelength than desired may be extracted upwards, potentially degrading color purity. However, the inclination of the microlens surface causes refraction of light, making it difficult for it to be extracted upwards. In this case, the larger the inclination angle, the greater the effect.

[0094] In this embodiment, since the length of the groove 320 in the first direction is greater than the length of the third steeply inclined portion 311 in the first direction, the amount of scattered light in the groove 320 becomes large. Therefore, by making the inclination angle Φk larger than the inclination angle Φj, it is possible to suppress the extraction of scattered light in the upward direction.

[0095] As shown in Figure 4, it is preferable that the lower end (bottom) of the groove 320 is at a higher position (further from the substrate in the first direction) than the upper end of the third steeply inclined portion 311. This suppresses color mixing and improves color purity. The reason for this will be explained below.

[0096] Light emitted from the first and second light-emitting layers enters the insulating layer 3 through the third steeply sloped section 311 and guides the insulating layer 3 in the second direction. Because the groove 320 in the insulating layer 3 restricts the path of the guided light, it becomes difficult for the guided light to reach adjacent light-emitting elements, thereby reducing the amount of light extracted through the color filters of adjacent pixels. Furthermore, because the groove 320 is located above the steeply sloped section 311 (farther from the substrate in the first direction), it can block the light from above that is likely to be involved in color mixing, which is highly effective.

[0097] The detailed structure of the semiconductor device of this embodiment will be described with reference to Figure 1. The element substrate 1 may have a substrate SUB, a switching element such as a transistor (not shown) arranged on the substrate SUB, wiring 11, and an interlayer insulating film 22. The substrate SUB is formed of a material that can support the lower electrode 2, the organic layer 40, and the upper electrode 5, and glass, plastic, silicon, etc. are preferred. Using a semiconductor substrate is preferable because it enables high-speed driving and high-density arrangement of pixels.

[0098] The lower electrode 2 of the first organic EL element 100 is preferably made of a light-transmitting material from the viewpoint of luminous efficiency. Specifically, transparent conductive oxides such as ITO and IZO, or thin films of metals and alloys such as Al, Ag, and Pt can be used. Furthermore, when forming the second organic EL element 200 and the third organic EL element 300, the lower electrodes 2 of each are electrically isolated. In addition, to optimize optical interference, the film thickness of the lower electrode 2 may differ between the first organic EL element 100 and the second organic EL element 200 and the third organic EL element 300.

[0099] The organic layer 40 is placed on the lower electrode 2 of the first organic EL element 100. The organic layer 40 is a layer that includes at least an emissive layer and may be composed of multiple layers.

[0100] The organic layer 40 emits light from the light-emitting layer when holes injected from the anode and electrons injected from the cathode recombine in the light-emitting layer. The light-emitting layer may consist of a single layer or multiple layers. Each light-emitting layer may contain a red light-emitting material, a green light-emitting material, or a blue light-emitting material, and by mixing the different light-emitting colors, white light can be obtained. In addition, each light-emitting layer may contain light-emitting materials of complementary colors, such as a blue light-emitting material and a yellow light-emitting material.

[0101] The organic layer 4 may include a hole transport layer, an emissive layer, and an electron transport layer. Appropriate materials can be selected for each of these layers from the viewpoints of luminous efficiency, operating lifetime, and optical interference. The hole transport layer may function as an electron blocking layer or a hole injection layer, or it may be a laminated structure of a hole injection layer, a hole transport layer, and an electron blocking layer. The emissive layer may be a laminated structure of emissive layers emitting different colors, or it may be a mixed layer of emissive dopants emitting different colors. Furthermore, the electron transport layer may function as a hole blocking layer or an electron injection layer, or it may be a laminated structure of an electron injection layer, an electron transport layer, and a hole blocking layer.

[0102] Furthermore, of the upper electrode 5 and lower electrode 2, the region between the anode electrode and the light-emitting layer is a hole transport layer, and the region between the cathode electrode and the light-emitting layer is an electron transport layer. The hole transport layer and the electron transport layer are collectively called the charge transport layer.

[0103] It is preferable that the lower electrode 2 is in contact with a hole transport layer. When the charge mobility of the hole transport layer is higher than that of the electron transport layer, leakage current flows more easily between the lower electrodes 2, thus allowing the effects of this embodiment to be enjoyed to a greater extent.

[0104] The organic layer 40 may be a tandem type composed of a charge generation layer 42, a first organic layer 41 below the charge generation layer, and a second organic layer 43 above the charge generation layer. The first organic layer and the second organic layer each have a light-emitting layer. If there are multiple charge generation layers, the organic layer below the lowest charge generation layer is designated as the first organic layer.

[0105] A charge transport layer, such as a hole transport layer or an electron transport layer, may be formed between the charge generating layer and the light-emitting layer. The charge generating layer is a layer that generates charge by containing an electron-donating material and an electron-accepting material. The electron-donating material and the electron-accepting material are, respectively, a material that donates electrons and a material that accepts electrons. As a result, positive and negative charges are generated in the charge generating layer, and positive or negative charges can be supplied to the layers above and below the charge generating layer.

[0106] The electron-donating material may be, for example, an alkali metal such as lithium or cesium. Alternatively, the electron-donating material may be, for example, lithium fluoride, a lithium complex, cesium carbonate, or a cesium complex. In this case, the electron-donating property may be exhibited when included together with a reducing material such as aluminum, magnesium, or calcium.

[0107] Furthermore, the electron-donating material may be a hole-transporting material. Examples of hole-transporting materials include triarylamine derivatives, phenylenediamine derivatives, triazole derivatives, oxadiazole derivatives, imidazole derivatives, pyrazoline derivatives, pyrazolone derivatives, oxazole derivatives, and fluorenone derivatives. In addition, hydrazone derivatives, stilbene derivatives, phthalocyanine derivatives, porphyrin derivatives, and organic compounds such as poly(vinylcarbazole), poly(silylene), poly(thiophene), and other conductive polymers can be used.

[0108] Furthermore, electron-donating materials may be included in electron-transporting materials. Examples of electron-transporting materials include oxadiazole derivatives, thiazole derivatives, thiadiazole derivatives, and pyrazine derivatives. In addition, organic compounds such as triazole derivatives, triazine derivatives, perylene derivatives, quinoline derivatives, quinoxaline derivatives, fluorenone derivatives, anthrone derivatives, phenanthroline derivatives, and organometallic complexes can be used.

[0109] The electron-accepting material may be an inorganic substance such as a transition metal oxide like molybdenum oxide, or an organic substance such as a hexaazatriphenylene derivative or [dipyradino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonnitrile]. The charge-generating layer may be a layer containing a mixture of an electron-accepting material and an electron-donating material, or a layer in which a layer containing an electron-donating material and a layer containing an electron-accepting material are laminated.

[0110] The organic layer 40 may be formed by the following method.

[0111] The organic layer constituting the light-emitting element according to this embodiment can be formed using a dry process such as vacuum deposition, ionization deposition, sputtering, or plasma deposition. Alternatively, instead of a dry process, a wet process can be used in which the layer is formed by dissolving the organic layer in a suitable solvent and applying a known coating method (e.g., spin coating, dipping, casting, LB method, inkjet method, etc.).

[0112] When layers are formed using methods such as vacuum deposition or solution coating, crystallization is less likely to occur, resulting in excellent stability over time. Furthermore, when forming films using coating methods, it is possible to combine the film with an appropriate binder resin.

[0113] Examples of the binder resins mentioned above include polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenolic resin, epoxy resin, silicone resin, and urea resin. The above are examples, and the binder resin is not limited to these.

[0114] Furthermore, these binder resins may be used individually as homopolymers or copolymers, or as a mixture of two or more types. Additionally, known additives such as plasticizers, antioxidants, and UV absorbers may be used in combination as needed.

[0115] The organic layer 40 is positioned between the lower electrode 2 and the insulating layer 3 and the upper electrode 5. It may be continuously formed on the upper surface of the element substrate 1 and shared by multiple organic EL elements. That is, one organic layer 40 may be shared by multiple organic EL elements. The organic layer 40 may be integrally formed over the entire surface of the display area where the image of the light-emitting device is displayed.

[0116] Furthermore, when forming the second organic EL element 200 and the third organic EL element 300, the organic layer 40 may be arranged across the lower electrode 2 of the first organic EL element, the lower electrode 2 of the second organic EL element, and the lower electrode 2 of the third organic EL element. Also, all or part of the organic layer 40 of the first organic EL element, the second organic EL element, and the third organic EL element may be patterned for each element. In addition, the organic layer 40 may be formed in the outer peripheral region on the outer periphery of the display area 1000.

[0117] The upper electrode 5 is positioned on the organic layer 40 of the first organic EL element and is light-transmitting. The upper electrode 5 may also be made of a semi-transparent material that transmits some of the light reaching its surface and reflects other parts (i.e., semi-transparent reflectivity). The material constituting the upper electrode 5 is made of a semi-transparent material consisting of, for example, transparent conductive oxides such as ITO and IZO, elemental metals such as aluminum, silver, and gold, alkali metals such as lithium and cesium, alkaline earth metals such as magnesium, calcium, and barium, or alloy materials containing these metal materials. The semi-transparent material is particularly preferably an alloy mainly composed of magnesium or silver.

[0118] Furthermore, the upper electrode 5 may be a laminated structure of the above material if it has a desirable transmittance. In addition, when forming the second organic EL element 200 and the third organic EL element 300, the upper electrode 5 may be arranged across the organic layer 40 of the first organic EL element, the organic layer 40 of the second organic EL element, and the organic layer 40 of the third organic EL element. Similar to the organic layer 40, the upper electrode 5 may be integrally formed over the entire surface of the display area 1000. The upper electrode 5 may also be formed in the outer peripheral region on the outer periphery of the display area 1000.

[0119] In this embodiment, the lower electrode 2 may be the anode and the upper electrode 5 may be the cathode, or the lower electrode 2 may be the cathode and the upper electrode 5 may be the anode.

[0120] The semiconductor device may have an insulating layer 3 provided on the outer periphery of the lower electrode 2 of the first organic EL element 100. That is, an opening is provided so that a part of the lower electrode 2 is exposed. The insulating layer 3 is formed to precisely shape the first light-emitting region 101 to a desired shape. If the insulating layer 3 is not provided, the shape of the lower electrode 2 will define the first light-emitting region 101. The insulating layer 3 is formed from an inorganic material such as silicon nitride (SiN), silicon oxynitride (SiON), or silicon oxide (SiO). It can be formed using known techniques such as sputtering or chemical vapor deposition (CVD). The insulating layer 3 can also be formed using an organic material such as acrylic resin or polyimide resin.

[0121] In this embodiment, the first pixel reflective member 105 has a reflective layer 102 disposed on the element substrate 1 in at least a portion of the area over which the first light-emitting region 101 overlaps. Furthermore, a conductive layer 103 is disposed on the reflective layer 102, and the conductive layer 103 of the first laminated portion 104 may have an opening in at least a portion of the area over which the first light-emitting region 101 overlaps, such that the reflective layer 102 is exposed. Light emitted by the first organic EL element can pass through the lower electrode 2 and be efficiently reflected by the reflective layer 102. From the viewpoint of improving luminous efficiency, it is particularly preferable that the size of the opening in the conductive layer 103 be the same as or larger than the size of the first light-emitting region 101. The conductive layer 103 can function as a corrosion suppression layer.

[0122] Since the light reflected by the reflective layer 102 is extracted from the upper electrode 5 to the light emission side, the semiconductor device of this embodiment can obtain high luminous efficiency. Here, the light emission side refers to the direction of the upper electrode 5 relative to the lower electrode 2.

[0123] For example, the reflective layer 102 is preferably selected from Ag or Al, which have high reflectivity, and the conductive layer 103 is preferably selected from Co, Mo, Pt, Ta, Ti, TiN, W, etc. The reflective layer 102 and the conductive layer 103 may be alloys or compounds. Particularly preferred combinations are when the reflective layer 102 is made of a material mainly composed of Al, and the conductive layer 103 is made of a material mainly composed of Ti or TiN. Furthermore, it is preferable that the reflective layer 102 is mainly composed of Al and contains Cu. It is also preferable that the conductive layer 103 is mainly composed of TiN. In addition, a barrier metal such as Ti or TiN may be provided on the element substrate side of the first pixel reflective member 105.

[0124] The reflective layer 102 and the conductive layer 103 can be formed by known film deposition methods such as sputtering, CVD, or ALD. The reflective layer 102 can be formed simultaneously with the same main component material by depositing a high-reflectivity material onto the device substrate and then patterning it using a known etching process. Similarly, the conductive layer 103 can also be formed simultaneously with the same main component material by depositing the material onto the device substrate and then patterning it using a known etching process.

[0125] Furthermore, the openings in the conductive layer 103 provided on the first pixel reflective member 105 can be formed by removing the conductive layer 103 using a known etching process.

[0126] In this embodiment, an optical interference layer 30 is provided between the first pixel reflective member 105 and the lower electrode 2. By adjusting the thickness of the optical interference layer 30, it is possible to optimize the optical distance between the light-emitting layer and the reflective layer 102 of the first organic EL element 100, thereby improving the luminous efficiency using optical interference. The optical interference layer may be a single layer or a laminated structure consisting of multiple layers.

[0127] In this embodiment, in addition to the first organic EL element 100, it is also possible to provide multiple organic EL elements in the display area 1000, such as a second organic EL element 200 and a third organic EL element 300. Similar to the first organic EL element 100, the second organic EL element 200 and the third organic EL element 300 also have an organic layer 40 that includes at least a light-emitting layer between the lower electrode 2 and the upper electrode 5. Furthermore, the second organic EL element 200 and the third organic EL element 300 also have a second pixel reflective member 205 and a third pixel reflective member 305 on the element substrate side of the lower electrode 2.

[0128] The second pixel reflective member 205, like the first pixel reflective member 105, has a reflective layer 202 laminated on it, and has the reflective layer 202 in at least a portion of the region where the second light-emitting portion 230 overlaps.

[0129] The third pixel reflective member 305, like the first pixel reflective member 105 and the second pixel reflective member 205, has a reflective layer 302 in at least a portion of the area over which the third light-emitting region 301 overlaps.

[0130] The second organic EL element 200 and the third organic EL element 300 may also have optical interference layers. By making the thickness of the optical interference layers of the first organic EL element 100, the second organic EL element 200, and the third organic EL element 300 different, it is possible to adjust the color of the light emitted from each organic EL element. The optical interference layer 30 can also be configured as a stacked structure of multiple layers.

[0131] For example, if the optical interference layer 30 is made thinner in the order of the first organic EL element 100, the second organic EL element 200, and the third organic EL element 300, then the first optical interference layer 31, the second optical interference layer 32, and the third optical interference layer 33 can be provided on the first pixel reflector 105, the second optical interference layer 32 and the third optical interference layer 33 can be provided on the second pixel reflector 205, and the third optical interference layer 33 can be provided on the third pixel reflector 305.

[0132] The optical interference layer 30 is preferably made of a transparent material, and is particularly preferably made of SiO, SiN, and SiON. Known techniques such as sputtering, CVD, and ALD can be used for the formation method.

[0133] As shown in Figure 1, it is preferable to adjust the color of light emitted from each organic EL element by making the thickness of the optical interference layer of the first organic EL element 100, the second organic EL element 200, and the third organic EL element 300 different. This makes it possible to increase the luminous efficiency of each color organic EL element. Furthermore, in the configuration where the thickness of the optical interference layer of each organic EL element is different, the surface irregularities of the insulating layer 3 tend to become larger, so leakage current is likely to occur between the lower electrode 2 and the charge generation layer 42 or between the charge generation layer 42 and the upper electrode 5. Therefore, the effects of this embodiment can be greatly enjoyed.

[0134] Furthermore, although not shown in the diagram, the pixel contact region may be insulated from the pixel reflective member 105 and electrically connected to the lower electrode 2. The lower electrode 2 and the pixel contact region may be electrically connected. This allows the first organic EL element 100 to conduct current through the pixel contact region. The pixel contact region may consist of a wiring layer and a conductive layer 103.

[0135] The first organic EL element 100 can conduct current through the pixel reflector 105. Furthermore, the second organic EL element 200 and the third organic EL element 300 may also have pixel reflectors 205 and 305, respectively.

[0136] When an optical interference layer 30 is provided, the lower electrode 2 and the pixel contact area 115 can be electrically connected by providing a plug 11 in the optical interference layer 30 and forming a conductive material inside the plug. The conductive material inside the plug may be the same material as the lower electrode 2. In addition, known conductive materials such as W, Ti, and TiN can be used as the conductive material provided inside the plug. It is also acceptable for the lower electrode 2 and the pixel reflective member 105 to be in contact through the plug. From the viewpoint of suppressing electrolytic corrosion, it is preferable that the portion of the pixel reflective member 105 that is in contact with the plug 11 be a conductive layer 103.

[0137] Figure 2 is a plan view showing one embodiment of the first pixel reflective member 105 of this embodiment. When the pixel reflective member 105 and the lower electrode 2 are in direct contact, it is particularly preferable that the conductive layer 103 and the lower electrode 2 be a combination that is less prone to galvanic corrosion. For example, it is preferable that the conductive layer 103 is made of a material mainly composed of TiN, and the lower electrode 2 is ITO or IZO.

[0138] The insulating layer 3 has grooves 320. The grooves 320 can be patterned by etching the insulating layer 3. The grooves 320 may be arranged to surround the openings 101 of the insulating layer 3.

[0139] The insulating layer 6, which functions as a protective layer, can be made of a material with low permeability to external oxygen and moisture, such as silicon nitride, silicon oxynitride, aluminum oxide, silicon oxide, and titanium oxide. Silicon nitride and silicon oxynitride may be formed, for example, by CVD. On the other hand, aluminum oxide, silicon oxide, and titanium oxide can be formed by atomic layer deposition (ALD).

[0140] The combination of materials and manufacturing methods for the protective layer is not limited to the examples given above, but may be manufactured considering the thickness of the layer to be formed, the time required for manufacturing, etc. The insulating layer 6 may be a single-layer structure or a laminated structure, as long as it transmits light that has passed through the upper electrode 5 and has sufficient moisture barrier performance.

[0141] The color filters 131, 231, and 331 are formed on the insulating layer 6. They may be in contact without any gaps, as shown in Figure 1, between color filter 131 and color filter 231. Alternatively, the color filters may be arranged so that they overlap other color filters.

[0142] An insulating layer 7, which functions as a planarization layer, may be placed below the color filter, or a planarization layer 8 may be placed above the color filter.

[0143] Microlenses 132, 232, and 332 may be placed on top of the planarization layer 8.

[0144] (Second Embodiment) The semiconductor device of the second embodiment shown in Figure 13 is similar to the semiconductor device of the first embodiment, except that the lower electrode 2 is arranged in contact with the element substrate 1 and it does not have an optical adjustment layer 30 or a reflective layer 105. Therefore, the explanation of the structure, function, materials, effects, etc., which are the same as those of the first embodiment will be omitted.

[0145] In the semiconductor device of this embodiment, it is preferable that the lower electrode 2 is light-reflective. By adopting such a configuration, the manufacturing time and cost of the semiconductor device can be reduced, and an inexpensive semiconductor device can be provided.

[0146] (Third embodiment) Next, an example of an organic light-emitting element that can be used in a semiconductor device according to Embodiment 1 or 2 will be described. The functional layer 4 of the organic light-emitting element according to this embodiment may have, in addition to the light-emitting layer, a hole injection layer, a hole transport layer, an electron blocking layer, a hole-exciton blocking layer, an electron transport layer, an electron injection layer, etc. The light-emitting layer may be a single layer or a laminate consisting of multiple layers. If there are multiple light-emitting layers, a charge generation layer may be provided between the light-emitting layers. The charge generation layer may be composed of a compound whose LUMO is lower than that of the hole transport layer, and the LUMO of the charge generation layer may be lower than that of the HOMO of the hole transport layer. Here, the molecular orbital energy of the organic compound layer may be the molecular orbital energy of the organic compound with the largest weight ratio of the organic compound layer.

[0147] The substrate of the element substrate 1 may be made of quartz, glass, silicon wafer, resin, metal, etc. The substrate may also be equipped with switching elements such as transistors and wiring, and an insulating layer may be provided on top of them. When a silicon wafer is used as the substrate, the active layer, source region, and drain region of the transistor are formed within the substrate. This is preferable because it allows for a dense arrangement of transistors.

[0148] The interlayer insulating layer can be made of any material that allows for the formation of contact holes to connect the first electrode to the wiring, while ensuring insulation from the wiring that is not connected. For example, resins such as polyimide, silicon oxide, and silicon nitride can be used.

[0149] The electrodes may be formed from a single material or from a combination of two or more materials. The anode may consist of a single layer or multiple layers.

[0150] The insulating layer 3, which serves as the pixel separation layer, may be formed, for example, from a silicon nitride (SiN) film, a silicon oxynitride (SiON) film, or a silicon oxide (SiO) film formed using chemical vapor deposition (CVD).

[0151] On the other hand, it is preferable to adjust the taper angle of the edges of the insulating layer 3 and the thickness of the pixel separation layer to such an extent that no voids are formed in the insulating layer 6 (protective layer) formed on top of it. Since no voids are formed in the insulating layer 6, which is the protective layer, the occurrence of defects in the insulating layer 6 can be reduced. Since the occurrence of defects in the protective layer is reduced, the decrease in reliability, such as the occurrence of dark spots and the occurrence of poor conductivity of the second electrode, can be reduced.

[0152] By adjusting the taper angle at the edges of the insulating layer 3, it is possible to effectively suppress charge leakage to adjacent pixels. For example, as mentioned above, it was found that sufficient reduction is possible when the taper angle is in the range of 60 degrees to 90 degrees. The thickness of the insulating layer 3 is preferably between 10 nm and 150 nm.

[0153] The functional layer 4 may have layers other than the charge transport layer 41 and the organic layer 42 having a light-emitting layer. The layers of the functional layer 4 may be called hole injection layers, hole transport layers, electron blocking layers, light-emitting layers, hole blocking layers, electron transport layers, or electron injection layers, depending on the function they have. The functional layer 4 is mainly composed of organic compounds, but may also contain inorganic atoms and inorganic compounds. For example, it may contain copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, etc.

[0154] When there are multiple light-emitting layers, a charge-generating porosity may be provided between the first and second light-emitting layers. The charge-generating porosity may contain an organic compound with a minimum unoccupied molecular orbital energy (LUMO) of -5.0 eV or less. The same applies when the charge-generating porosity is provided between the second and third light-emitting layers.

[0155] An insulating layer 6 may be provided on the second electrode as a protective layer. For example, a passivation film such as silicon nitride may be provided on the second electrode 5 as the insulating layer 6 to reduce the intrusion of water, etc., into the functional layer 4. For example, after forming the second electrode 5, it may be transported to another chamber without breaking the vacuum and a silicon nitride film with a thickness of 2 μm may be formed by the CVD method to serve as a protective layer. An insulating layer 6 may also be provided using atomic deposition (ALD) after the film formation by the CVD method. The material of the film formed by the ALD method is not limited, but may be silicon nitride, silicon oxide, aluminum oxide, etc. A silicon nitride film may be further formed on the film formed by the ALD method by the CVD method. The film formed by the ALD method may have a smaller film thickness than the film formed by the CVD method. Specifically, it may be 50% or less, or even 10% or less.

[0156] An insulating layer 8 may be provided on top of the insulating layer 6, functioning as a planarizing layer to alleviate the unevenness of the upper surface of the insulating layer 6. The insulating layer may be composed of an organic compound, and may be low molecular weight or high molecular weight, but is preferably high molecular weight. The insulating layer 8 may be composed of an inorganic material, and may include silicon oxide or silicon nitride. If the semiconductor device has a color filter, the insulating layer 8 may be provided above and below the color filter, and its constituent materials may be the same or different. Specifically, examples include polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenolic resin, epoxy resin, silicone resin, urea resin, etc.

[0157] A semiconductor device may have an optical element such as a microlens 9 on its light-emitting side. The microlens 9 may be made of acrylic resin, epoxy resin, or the like. The microlens 9 may be used to increase the amount of light extracted from the light-emitting device or to control the direction of the extracted light. The microlens 9 may have a hemispherical shape. If it has a hemispherical shape, among the tangents that touch the hemisphere, there is a tangent that is parallel to the insulating layer, and the point of contact between that tangent and the hemisphere is the apex of the microlens 9.

[0158] The vertices of the microlens 9 can be similarly determined in any cross-sectional view. That is, among the tangents that touch the semicircle of the microlens 9 in the cross-sectional view, there is a tangent that is parallel to the insulating layer, and the point of contact between that tangent and the semicircle is the vertex of the microlens.

[0159] Furthermore, the midpoint of the microlens 9 can also be defined. In the cross-section of the microlens 9, a line segment can be imagined from the point where one arc shape ends to the point where another arc shape ends, and the midpoint of this line segment can be called the midpoint of the microlens 9. The cross-section used to determine the vertices and midpoints may be a cross-section perpendicular to the insulating layer.

[0160] The microlens 9 has a first surface with a convex portion and a second surface opposite to the first surface. It is preferable that the second surface is positioned closer to the functional layer than the first surface. To adopt such a configuration, it is necessary to form the microlens 9 on the organic light-emitting element 10. When the functional layer is an organic layer, it is preferable to avoid processes that involve high temperatures during the manufacturing process. Furthermore, when adopting a configuration in which the second surface is positioned closer to the functional layer than the first surface, it is preferable that the glass transition temperatures of all the organic compounds constituting the organic layer are 100°C or higher, and more preferably 130°C or higher.

[0161] An opposing substrate may be provided on the insulating layer 8, the color filter 7, or the microlens 9. The opposing substrate is called an opposing substrate because it is provided in a position corresponding to the aforementioned substrate. The constituent material of the opposing substrate may be the same as that of the aforementioned substrate. The opposing substrate may be the second substrate if the aforementioned substrate is referred to as the first substrate.

[0162] The semiconductor device may have a pixel circuit connected to a light-emitting element. The pixel circuit may be an active-matrix type that independently controls the emission of light from a first light-emitting element and a second light-emitting element. The active-matrix circuit may be voltage-programmed or current-programmed. The driving circuit has a pixel circuit for each pixel. The pixel circuit may include a light-emitting element, a transistor that controls the emission brightness of the light-emitting element, a transistor that controls the emission timing, a capacitor that holds the gate voltage of the transistor that controls the emission brightness, and a transistor for connecting to GND without going through the light-emitting element.

[0163] A semiconductor device may have a display area and a peripheral area surrounding the display area. The display area has a pixel circuit, and the peripheral area has a display control circuit. The mobility of the transistors constituting the pixel circuit may be smaller than the mobility of the transistors constituting the display control circuit.

[0164] The slope of the current-voltage characteristics of the transistors constituting the pixel circuit can be smaller than the slope of the current-voltage characteristics of the transistors constituting the display control circuit. The slope of the current-voltage characteristics can be measured using the so-called Vg-Ig characteristic.

[0165] The transistors that make up the pixel circuit are transistors connected to light-emitting elements, such as the first light-emitting element.

[0166] The semiconductor device has a plurality of pixels, as described in the above-described embodiment. Each pixel has sub-pixels SP that emit different colors from each other. The sub-pixels SP may each have, for example, RGB emission colors.

[0167] A pixel emits light in a region also called the pixel aperture. This region is the same as the first region 1001 or the second region 1002. In the semiconductor device of at least one of Embodiments 1 to 3, the distance between subpixels (from center to center of adjacent subpixels) is, for example, 6.4 μm or less.

[0168] Pixels can take on known arrangements in a plan view. For example, they may be in a stripe arrangement, delta arrangement, honeycomb arrangement, pentile arrangement, or Bayer arrangement. The shape of subpixels in a plan view may be any known shape. For example, rectangles, rhombuses, hexagons, etc. Of course, even if it is not a precise shape, if it is close to a rectangle, it is included in the category of rectangles. The shape of subpixels and the pixel arrangement can be used in combination.

[0169] The semiconductor device described in any of the first to third embodiments above can be used as a component of a display device or the like. For example, it can be used in a light-emitting device having a color filter in a white light source.

[0170] The display device may be an image information processing device having an image input unit that receives image information from an area CCD, linear CCD, memory card, etc., an information processing unit that processes the input information, and displays the input image on a display unit. The display unit may have a semiconductor device as described in any of Embodiments 1 to 3.

[0171] Furthermore, the display unit of the imaging device or inkjet printer may have a display device according to any of Embodiments 1 to 3. The display unit may also have a touch panel function. The driving method for this touch panel function may be infrared, capacitive, resistive, or electromagnetic induction, and is not particularly limited. The display device may also be used in the display unit of a multifunction printer.

[0172] Next, the display device according to this embodiment will be described with reference to the drawings.

[0173] Figure 14 is a schematic cross-sectional view showing an example of a semiconductor device having an organic light-emitting element and a transistor connected to this organic light-emitting element. The transistor is an example of an active element. Here, a thin-film transistor (TFT) is shown as an example, but a MOSFET using a semiconductor substrate can also be used. By using a MOSFET, the transistors within each pixel can be arranged in the configuration based on the above embodiment within a smaller area.

[0174] Figure 14(a) shows an example of a pixel, which is a component of the semiconductor device according to this embodiment. The pixel has sub-pixels SP. The sub-pixels are divided into SPR, SPG, and SPB based on their light emission. The light emission color may be distinguished by the wavelength emitted from the light-emitting layer, or the light emitted from the sub-pixel may be selectively transmitted or color-converted by a color filter or the like. In each sub-pixel SP, the semiconductor device has a lower electrode 2, an insulating layer 3 covering the edge of the lower electrode 2, a functional layer 4 covering the lower electrode 2 and the insulating layer 3, a second electrode 5, and an insulating layer 6 on the element substrate 1.

[0175] The element substrate 1 may have transistors and capacitive elements arranged in its lower layer or internally. The transistors and the lower electrode 2 may be electrically connected via contact holes or the like (not shown).

[0176] The insulating layer 3 is also called a bank or pixel isolation layer. It covers the edge of the lower electrode 2 and surrounds it. The portion of the insulating layer 3 that is not present is in contact with the functional layer 4 and becomes the light-emitting region.

[0177] The functional layer 4 includes a hole injection layer 45, a hole transport layer 41, a first light-emitting layer 42A, a second light-emitting layer 42B, and an electron transport layer 43.

[0178] The second electrode 5 may be a transparent electrode or a semi-transparent electrode.

[0179] The insulating layer 6 reduces the penetration of moisture into the functional layer 4. Although the insulating layer 6 is shown as a single layer, it may consist of multiple layers. Each layer may contain an inorganic compound layer and an organic compound layer.

[0180] Figure 15 is a schematic diagram showing an example of a semiconductor device, specifically a display device. The display device 1010 may have a touch panel 1013, a display panel 1015, a frame 1016, a circuit board 1017, and a battery 1018 between an upper cover 1011 and a lower cover 1019. Flexible printed circuits FPCs 1012 and 1014 are connected to the touch panel 1013 and the display panel 1015.

[0181] The display panel 1015 has at least one organic light-emitting device according to Embodiments 1 to 3. A transistor is printed on the circuit board 1017. The battery 1018 may not be provided if the display device is not a portable device, or it may be provided in a different location even if it is a portable device.

[0182] The display device according to this embodiment may be used in the display unit of a mobile terminal. In that case, it may have both display and operation functions. Examples of mobile terminals include smartphones and other mobile phones, tablets, and head-mounted displays.

[0183] The display device according to this embodiment may be used in the display unit of an imaging device having an optical unit with multiple lenses and an image sensor that receives light that has passed through the optical unit. The imaging device may have a display unit that displays information acquired by the image sensor. Furthermore, the display unit may be a display unit exposed to the outside of the imaging device or a display unit located inside the viewfinder. The imaging device may be a digital camera or a digital video camera.

[0184] Figure 16(a) is a schematic diagram showing an example of an imaging device as an application example of the semiconductor device according to this embodiment. The imaging device 1100 may have a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The viewfinder 1101 may have an organic light-emitting device according to at least one of embodiments 1 to 3 as a display. In that case, the organic light-emitting device may display not only the image to be captured, but also environmental information, imaging instructions, etc. Environmental information may include the intensity of ambient light, the direction of ambient light, the speed at which the subject is moving, the possibility of the subject being obscured by an obstacle, etc.

[0185] Since the optimal timing for imaging is only a short period, it is better to display the information as quickly as possible. Therefore, it is preferable to use an organic light-emitting device of any of Embodiments 1 to 3 that uses organic light-emitting elements. This is because organic light-emitting elements have a fast response speed. Display devices using organic light-emitting elements require a fast display speed, and in this respect, any of the light-emitting devices of Embodiments 1 to 3 can be used more preferably than liquid crystal display devices.

[0186] The imaging device 1100 has an optical section (not shown). The optical section has multiple lenses that form an image on the image sensor housed in the housing 1104. The focus can be adjusted by adjusting the relative positions of the multiple lenses. This operation can also be performed automatically. The imaging device may also be called a photoelectric converter. The photoelectric converter may not capture images sequentially, but may include imaging methods such as detecting the difference from the previous image or extracting from an image that is always being recorded.

[0187] Figure 16(b) is a schematic diagram showing an example of an electronic device according to this embodiment. The electronic device 1200 has a display unit 1201, an operating unit 1202, and a housing 1203. The housing 1203 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit.

[0188] The display unit 1201 may have an organic light-emitting device according to at least one of the embodiments 1 to 3. The operation unit 1202 may be a button or a touch panel type response unit. The operation unit may also be a biometric recognition unit that recognizes fingerprints to unlock or otherwise perform actions. An electronic device having a communication unit can also be called a communication device. The electronic device may further have a camera function by including a lens and an image sensor. The image captured by the camera function is displayed on the display unit. Examples of electronic devices include smartphones and laptop computers.

[0189] Figure 17 is a schematic diagram showing an example of a display device according to this embodiment. Figure 17(a) is a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302 surrounded by the frame 1301. The display unit 1302 may use a light-emitting device according to at least one of embodiments 1 to 3.

[0190] The display device 1300 further includes a frame 1301 and a base 1303 that supports the display unit 1302. The base 1303 is not limited to the form shown in Figure 17(a). For example, the lower edge of the frame 1301 may also serve as the base.

[0191] Furthermore, the frame 1301 and the display section 1302 may be curved. Their radius of curvature may be between 5000 mm and 6000 mm.

[0192] Figure 17(b) is a schematic diagram showing another example of the display device according to this embodiment. The display device 1310 in Figure 17(b) is configured to be foldable and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The first display unit 1311 and the second display unit 1312 may have an organic light-emitting device according to at least one of these embodiments 1 to 3. The first display unit 1311 and the second display unit 1312 may be a single display device without seams. The first display unit 1311 and the second display unit 1312 can be separated by a bending point. The first display unit 1311 and the second display unit 1312 may each display different images, or the first and second display units may together display a single image.

[0193] Referring to Figure 18, examples of applications of the display devices having the organic light-emitting devices of Embodiments 1 to 3 described above will be explained. The display devices can be applied to systems that can be worn as wearable devices such as smart glasses, HMDs, and smart contact lenses. The imaging device and display device used in such applications can be an imaging device capable of photoelectric conversion of visible light and a display device capable of emitting visible light.

[0194] Figure 18(a) illustrates a pair of glasses 1600 (smart glasses) according to one application example. An imaging device 1602, such as a CMOS sensor or SPAD, is provided on the front surface side of the lens 1601 of the glasses 1600. A display device 1604 having a light-emitting device according to at least one of the embodiments 1 to 3 described above is provided on the back surface side of the lens 1601.

[0195] The eyeglasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the imaging device 1602 and the display device 1604. The control device 1603 also controls the operation of the imaging device 1602 and the display device. The lens 1601 has an optical system formed therein for focusing light onto the imaging device 1602.

[0196] Figure 18(b) illustrates a pair of glasses 1610 (smart glasses) according to one application example. The glasses 1610 have a control device 1612. The control device 1612 is equipped with an imaging device corresponding to the imaging device 1602 and a display device 1614 corresponding to the display device 1604. An optical system is formed in the lens 1611 for projecting the light emitted by the display device 1614 in the control device 1612, and an image is projected onto the lens 1611. The control device 1612 functions as a power supply that provides power to the imaging device and the display device 1614, and also controls the operation of the imaging device and the display device 1614.

[0197] The control device may have a gaze detection unit that detects the wearer's gaze. Gaze detection may use infrared light. The infrared light emitter emits infrared light towards the user's eyeballs that are fixated on the displayed image. An imaging unit having a light-receiving element detects the reflected infrared light from the eyeballs, thereby obtaining an image of the eyeballs. By having a reduction means that reduces the light from the infrared light emitter to the display unit in a planar view, the degradation of image quality is reduced.

[0198] The user's gaze towards the displayed image is detected from an image of the eyeball obtained by imaging with infrared light. Any known method can be applied to gaze detection using an image of the eyeball. For example, a gaze detection method based on the Purkinje image obtained by the reflection of the irradiated light from the cornea can be used.

[0199] More specifically, gaze detection processing is performed based on the pupil-corneal reflection method. Using the pupil-corneal reflection method, a gaze vector representing the orientation (rotation angle) of the eyeball is calculated based on the pupil image and Purkinje image contained in the captured image of the eyeball, thereby detecting the user's gaze.

[0200] The eyeglasses 1610 according to this embodiment may have an imaging device with a light-receiving element, and may control the display image of the display device based on the user's gaze information from the imaging device.

[0201] Specifically, the display device 1614 determines a first display area that the user is fixated on and a second display area other than the first display area, based on gaze information. The first and second display areas may be determined by the control device of the glasses 1610, or they may be determined by an external control device and received. In the display area of ​​the display device 1614, the display resolution of the first display area may be controlled to be higher than the display resolution of the second display area. In other words, the resolution of the second display area may be lower than that of the first display area.

[0202] Furthermore, the display area has a first display area and a second display area different from the first display area, and based on line-of-sight information, the area with higher priority is determined from the first display area and the second display area. The first and second field-of-sight areas may be determined by the control device of the display device, or they may be determined by an external control device and received. The resolution of the high-priority area may be controlled to be higher than the resolution of the areas other than the high-priority area. In other words, the resolution of areas with relatively lower priority may be set lower.

[0203] AI may be used to determine the first display area and areas with higher priority. The AI ​​may be a model configured to estimate the angle of gaze and the distance to the target object at the end of the line of sight from the image of the eye, using the image of the eye and the direction the eye was actually looking in that image as training data. The AI ​​program may be installed in the display device, the imaging device, or an external device. If installed in an external device, it will be transmitted to the display device via communication.

[0204] When display control is based on visual detection, this method is preferably applicable to smart glasses that further include an imaging device for capturing images of the surrounding environment. The smart glasses can display the captured external information in real time.

[0205] Thus, by applying the organic light-emitting device according to at least one of Embodiments 1 to 3 to various devices according to this embodiment, the device can be miniaturized or its resolution can be increased while maintaining the same size. Furthermore, it is possible to provide a device with reduced variations during manufacturing.

[0206] This disclosure includes, for example, the following configurations:

[0207] Figure 19 shows an image forming apparatus according to this embodiment. Figure 19(a) is a schematic diagram of the image forming apparatus 1136 according to this embodiment. The image forming apparatus includes a photoreceptor, an exposure light source, a developing unit, a charging unit, a transfer unit, a transport roller, and a fuser.

[0208] Light 1129 is irradiated from the exposure light source 1128, and an electrostatic latent image is formed on the surface of the photoreceptor 1127. This exposure light source has an organic light-emitting element according to the present invention. The developing unit 1131 contains toner or the like. The charging unit 1130 charges the photoreceptor. The transfer unit 1132 transfers the developed image to the recording medium 1134. The transport unit 1133 transports the recording medium 1134. The recording medium 1134 is, for example, paper. The fixing unit 1135 fixes the image formed on the recording medium.

[0209] Figures 19(b) and 19(c) are schematic diagrams showing how multiple light-emitting units 1138 are arranged on a long substrate with an exposure light source 1128. Direction 1137 is parallel to the axis of the photoreceptor and represents the column direction in which the organic light-emitting elements are arranged. This column direction is the same as the direction of the axis of rotation of the photoreceptor 1127. This direction can also be called the long axis direction of the photoreceptor.

[0210] Figure 19(b) shows a configuration in which the light-emitting units are arranged along the long axis of the photoreceptor. Figure 19(c) shows a different configuration from (b), in which the light-emitting units are arranged alternately in the column direction in the first and second columns. The first and second columns are positioned at different locations in the row direction.

[0211] The first row has multiple light-emitting units 1138 arranged at intervals. The second row has light-emitting units at positions corresponding to the intervals between the light-emitting units in the first row. That is, multiple light-emitting units are also arranged at intervals in the row direction. As the light-emitting units 1138, semiconductor devices according to at least one of Embodiments 1 to 3 can be used.

[0212] The arrangement in Figure 19(c) can also be described as a grid pattern, a houndstooth pattern, or a checkerboard pattern.

[0213] Figure 20 is a schematic diagram of an automobile, which is an example of a mobile body according to this embodiment. The automobile 1500 has a steering wheel 1504 for controlling the direction of movement of the mobile body, a display unit 1505 mounted on the vehicle body 1503 for displaying a map, the position of the mobile body, the direction of turns, etc. The display unit 1505 may have an organic light-emitting device according to at least one of embodiments 1 to 3.

[0214] Although an automobile is used as an example here, the mobile body according to this embodiment is not limited to an automobile. The mobile body according to this embodiment mainly includes a driving force generating unit that generates the driving force used to move the mobile body, and one or both of the rotating body mainly used to move the mobile body. The driving force generating unit may be an engine, motor, etc. The rotating body may be a tire, wheel, ship's propeller, aircraft propeller, etc. Specifically, it may be a bicycle, automobile, train, ship, aircraft, drone, etc.

[0215] The mobile unit may have a body and a light fixture or display unit provided on the body. The light fixture may emit light to indicate the position of the body. The light fixture may have an organic light-emitting element according to this embodiment. The display unit may also have an organic light-emitting element according to the above embodiment.

[0216] This disclosure includes, for example, the following configurations:

[0217] (Composition 1) The lower electrode is placed on the element substrate, An insulating layer covering the end of the lower electrode and disposed on the element substrate, The lower electrode and the organic layer disposed on the insulating layer, The upper electrode is disposed on the lower electrode and the insulating layer, with the aforementioned organic layer sandwiched between them. The organic layer comprises a first light-emitting layer, a second light-emitting layer, and a charge-generating layer disposed between the first and second light-emitting layers. In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The upper surface of the insulating layer has grooves, The groove portion has a bottom portion, a first steeply inclined portion that is inclined at an angle greater than 50° with respect to a parallel plane parallel to the lower surface of the lower electrode, and a first gently inclined portion that is positioned between the bottom portion and the first steeply inclined portion and is inclined at an angle of 50° or less with respect to the parallel plane. A semiconductor device in which the length of the first steeply inclined portion in a first direction perpendicular to the parallel plane is smaller than the length in the first direction from the upper surface of the lower electrode to the lower surface of the charge generating layer in the first region where the lower electrode and the organic layer are in contact.

[0218] (Configuration 2) A semiconductor device having the configuration 1, wherein in the cross-section, the groove portion has a second steeply inclined portion that is inclined at an angle greater than 50° with respect to the parallel plane at a position opposite to the first steeply inclined portion, and a second gently inclined portion that is inclined at an angle of 50° or less with respect to the parallel plane between the second steeply inclined portion and the bottom portion.

[0219] (Composition 3) A semiconductor device having configuration 1 or 2, wherein in the cross-section, the length of the opposing upper ends of the grooves in a second direction parallel to the parallel plane is greater than twice the length in the first direction from the upper surface of the lower electrode to the lower surface of the charge generation layer in the first region.

[0220] (Composition 4) A semiconductor device having configuration 1 or 2, wherein the ratio of the length in the first region from the upper surface of the lower electrode to the lower surface of the charge generation layer to the length of the first steeply inclined portion in the first direction is less than 1.5.

[0221] (Composition 5) The semiconductor device having any of configurations 1 to 4, wherein the first gently sloping portion has a portion that is inclined at an angle of 18° or more with respect to the parallel plane.

[0222] (Composition 6) In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The insulating layer has a third steeply inclined portion in the second region between the first region and the groove portion that is inclined at an angle greater than 50° with respect to the parallel plane, The first light-emitting layer is disposed between the lower electrode and the charge-generating layer. A semiconductor device of any configuration 1 to 5, wherein the length of the third steeply inclined portion in the first direction is greater than the length of the first region from the lower electrode to the first light-emitting layer in the first direction.

[0223] (Composition 7) In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The insulating layer has a third steeply inclined portion in the second region between the first region and the groove portion that is inclined at an angle greater than 50° with respect to the parallel plane, The first light-emitting layer is disposed between the lower electrode and the charge-generating layer. A semiconductor device of any configuration 1 to 6, wherein the length of the third steeply inclined portion in the first direction is smaller than the length of the first region from the lower electrode to the charge generation layer in the first direction.

[0224] (Composition 8) In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The insulating layer has a third steeply inclined portion in the second region between the first region and the groove portion that is inclined at an angle greater than 50° with respect to the parallel plane, The first light-emitting layer is disposed between the lower electrode and the charge-generating layer. A semiconductor device having any of configurations 1 to 7, wherein the length of the groove in the first direction is greater than the length of the third steeply inclined portion in the first direction.

[0225] (Composition 9) In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The insulating layer has a third steeply inclined portion in the second region between the first region and the groove portion that is inclined at an angle greater than 50° with respect to the parallel plane, The first light-emitting layer is disposed between the lower electrode and the charge-generating layer. A semiconductor device having any of configurations 1 to 8, wherein the length of the groove in the first direction is smaller than the length of the organic layer in the first region in the first direction.

[0226] (Composition 10) In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The insulating layer has a third steeply inclined portion in the second region between the first region and the groove portion that is inclined at an angle greater than 50° with respect to the parallel plane, A semiconductor device having any of configurations 1 to 9, wherein the third steeply inclined portion and the groove portion overlap with the lower electrode when viewed in a plan view with respect to the parallel plane.

[0227] (Composition 11) In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The insulating layer has a third steeply inclined portion in the second region between the first region and the groove portion that is inclined at an angle greater than 50° with respect to the parallel plane, A semiconductor device having any of configurations 1 to 10, wherein the lower end of the groove is located higher than the upper end of the third steeply inclined portion.

[0228] (Composition 12) It has microlenses, The first region and the vertices of the microlens overlap in a plan view with respect to the parallel plane, A semiconductor device having any of configurations 1 to 11, wherein, in the cross-section, the angle of inclination of the microlens surface with respect to the parallel plane at a position directly above the position closest to the first region of the groove is greater than the angle of inclination of the microlens surface with respect to the parallel plane at a position directly above the end of the first region.

[0229] (Composition 13) The lower electrode is placed on the element substrate, An insulating layer covering the end of the lower electrode and disposed on the element substrate, The lower electrode and the organic layer disposed on the insulating layer, The upper electrode is disposed on the lower electrode and the insulating layer, with the aforementioned organic layer sandwiched between them. The organic layer comprises a first light-emitting layer, a second light-emitting layer, and a charge-generating layer disposed between the first and second light-emitting layers. In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The upper surface of the insulating layer has grooves, The groove portion has a bottom portion and a first steeply inclined portion that is inclined at an angle greater than 50° with respect to a parallel plane parallel to the lower surface of the lower electrode. The length of the first steeply inclined portion in a first direction perpendicular to the parallel plane is smaller than the length in the first direction from the upper surface of the lower electrode to the lower surface of the charge generation layer in the first region where the lower electrode and the organic layer are in contact. A semiconductor device in which the ratio of the length of the groove in the first direction to the length of the opposing upper ends of the grooves in the second direction parallel to the parallel plane is 3.6 or less.

[0230] (Composition 14) A semiconductor device having a configuration 13 in which, in the cross-section, the groove portion has a second steeply inclined portion that is inclined at an angle greater than 50° with respect to the parallel plane at a position opposite to the first steeply inclined portion, and a gently inclined portion between the second steeply inclined portion and the bottom portion that is inclined at an angle of 50° or less with respect to the parallel plane.

[0231] (Composition 15) A semiconductor device having a configuration 13 or 14 in which, in the cross-section, the length in the second direction of the opposing upper ends of the grooves is greater than twice the length in the first direction from the upper surface of the lower electrode to the lower surface of the charge generation layer in the first region.

[0232] (Composition 16) A semiconductor device having configuration 13 or 14 in which the ratio of the length in the first region from the upper surface of the lower electrode to the lower surface of the charge generation layer to the length of the first steeply inclined portion in the first direction is less than 1.5.

[0233] (Composition 17) The semiconductor device having any of configurations 14 to 16, wherein the gently sloping portion has a portion that is inclined at an angle of 18° or more with respect to the parallel plane.

[0234] (Composition 18) In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The insulating layer has a third steeply inclined portion in the second region between the first region and the groove portion that is inclined at an angle greater than 50° with respect to the parallel plane, The first light-emitting layer is disposed between the lower electrode and the charge-generating layer. A semiconductor device having any of configurations 13 to 17, wherein the length of the third steeply inclined portion in the first direction is greater than the length of the first region from the lower electrode to the first light-emitting layer in the first direction.

[0235] (Composition 19) In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The insulating layer has a third steeply inclined portion in the second region between the first region and the groove portion that is inclined at an angle greater than 50° with respect to the parallel plane, The first light-emitting layer is disposed between the lower electrode and the charge-generating layer. A semiconductor device having any of configurations 13 to 18, wherein the length of the third steeply inclined portion in the first direction is smaller than the length of the first region from the lower electrode to the charge generation layer in the first direction.

[0236] (Composition 20) In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The insulating layer has a third steeply inclined portion in the second region between the first region and the groove portion that is inclined at an angle greater than 50° with respect to the parallel plane, The first light-emitting layer is disposed between the lower electrode and the charge-generating layer. A semiconductor device having any of configurations 13 to 19, wherein the length of the groove in the first direction is greater than the length of the third steeply inclined portion in the first direction.

[0237] (Composition 21) In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The insulating layer has a third steeply inclined portion in the second region between the first region and the groove portion that is inclined at an angle greater than 50° with respect to the parallel plane, The first light-emitting layer is disposed between the lower electrode and the charge-generating layer. A semiconductor device having any of configurations 13 to 20, wherein the length of the groove in the first direction is smaller than the length of the organic layer in the first region in the first direction.

[0238] (Composition 22) In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The insulating layer has a third steeply inclined portion in the second region between the first region and the groove portion that is inclined at an angle greater than 50° with respect to the parallel plane, A semiconductor device having any of configurations 13 to 21 in which the third steeply inclined portion and the groove portion overlap with the lower electrode when viewed in a plan view with respect to the parallel plane.

[0239] (Composition 23) In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The insulating layer has a third steeply inclined portion that inclines at an angle greater than 50° with respect to the parallel plane in a second region between the first region and the groove portion. A semiconductor device according to any one of configurations 13 to 23, wherein a lower end of the groove portion is located at a position higher than an upper end of the third steeply inclined portion.

[0240] (Configuration 24) Having a microlens, a vertex of the microlens and the first region overlap in a plan view with respect to the parallel plane, In the cross section, an inclination angle of a microlens surface with respect to the parallel plane at a position directly above an end portion of the first region is greater than an inclination angle of the microlens surface with respect to the parallel plane at a position directly above a position closest to the first region of the groove portion. A semiconductor device according to any one of configurations 13 to 23.

[0241] (Configuration 25) A display device, comprising: a semiconductor device according to any one of configurations 1 to 24; and a transistor connected to the lower electrode of the semiconductor device.

[0242] (Configuration 26) An optical conversion device, comprising: an optical unit having a plurality of lenses; an imaging element that receives light that has passed through the optical unit; and a display unit that displays an image captured by the imaging element, wherein the display unit has a semiconductor device according to any one of configurations 1 to 24.

[0243] (Configuration 27) An electronic device, comprising: a display unit having a semiconductor device according to any one of configurations 1 to 24; a housing provided with the display unit; and a communication unit provided in the housing and communicating with the outside.

[0244] (Configuration 28) An imaging device, comprising: a lens in which an imaging device and a display unit are arranged; and a control device, wherein a light emitting device according to any one of configurations 1 to 24 is arranged in the display unit. The control device controls the operation of the imaging device and the display unit, characterized in that the eyeglasses are controlled by the control device.

[0245] (Composition 29) An exposure light source having a semiconductor device with any configuration 1 to 24, An image forming apparatus having a photoreceptor that is irradiated with light from the exposure light source.

[0246] (Composition 30) It has a vehicle body and a display unit mounted on the vehicle body, The display unit is a mobile body having a semiconductor device of any of configurations 1 to 24.

Claims

1. The lower electrode is placed on the element substrate, An insulating layer covering the end of the lower electrode and disposed on the element substrate, The lower electrode and the organic layer disposed on the insulating layer, The upper electrode is disposed on the lower electrode and the insulating layer, with the aforementioned organic layer sandwiched between them. The organic layer comprises a first light-emitting layer, a second light-emitting layer, and a charge-generating layer disposed between the first and second light-emitting layers. In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The upper surface of the insulating layer has grooves, The groove portion has a bottom portion, a first steeply inclined portion that is inclined at an angle greater than 50° with respect to a parallel plane parallel to the lower surface of the lower electrode, and a first gently inclined portion that is positioned between the bottom portion and the first steeply inclined portion and is inclined at an angle of 50° or less with respect to the parallel plane. A semiconductor device in which the length of the first steeply inclined portion in a first direction perpendicular to the parallel plane is smaller than the length in the first direction from the upper surface of the lower electrode to the lower surface of the charge generating layer in the first region where the lower electrode and the organic layer are in contact.

2. The semiconductor device according to claim 1, wherein in the cross-section, the groove portion has a second steeply inclined portion that is inclined at an angle greater than 50° with respect to the parallel plane at a position opposite to the first steeply inclined portion, and a second gently inclined portion that is inclined at an angle of 50° or less with respect to the parallel plane between the second steeply inclined portion and the bottom portion.

3. The semiconductor device according to claim 1, wherein in the cross-section, the length of the opposing upper ends of the grooves in a second direction parallel to the parallel plane is greater than twice the length in the first direction from the upper surface of the lower electrode to the lower surface of the charge generation layer in the first region.

4. The semiconductor device according to claim 1, wherein the ratio of the length in the first direction from the upper surface of the lower electrode to the lower surface of the charge generation layer in the first region to the length of the first steeply inclined portion in the first direction is less than 1.

5.

5. The semiconductor device according to claim 1, wherein the first gently sloping portion has a portion that is inclined at an angle of 18° or more with respect to the parallel plane.

6. In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The insulating layer has a third steeply inclined portion in the second region between the first region and the groove portion that is inclined at an angle greater than 50° with respect to the parallel plane, The first light-emitting layer is disposed between the lower electrode and the charge-generating layer. The semiconductor device according to claim 1, wherein the length of the third steeply inclined portion in the first direction is greater than the length of the first region from the lower electrode to the first light-emitting layer in the first direction.

7. In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The insulating layer has a third steeply inclined portion in the second region between the first region and the groove portion that is inclined at an angle greater than 50° with respect to the parallel plane, The first light-emitting layer is disposed between the lower electrode and the charge-generating layer. The semiconductor device according to claim 1, wherein the length of the third steeply inclined portion in the first direction is smaller than the length of the first region from the lower electrode to the charge generation layer in the first direction.

8. In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The insulating layer has a third steeply inclined portion in the second region between the first region and the groove portion that is inclined at an angle greater than 50° with respect to the parallel plane, The first light-emitting layer is disposed between the lower electrode and the charge-generating layer. The semiconductor device according to claim 1, wherein the length of the groove in the first direction is greater than the length of the third steeply inclined portion in the first direction.

9. In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The insulating layer has a third steeply inclined portion in the second region between the first region and the groove portion that is inclined at an angle greater than 50° with respect to the parallel plane, The first light-emitting layer is disposed between the lower electrode and the charge-generating layer. The semiconductor device according to claim 1, wherein the length of the groove in the first direction is smaller than the length of the organic layer in the first region in the first direction.

10. In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The insulating layer has a third steeply inclined portion in the second region between the first region and the groove portion that is inclined at an angle greater than 50° with respect to the parallel plane, The semiconductor device according to claim 1, wherein the third steeply inclined portion and the groove portion overlap the lower electrode when viewed in a plan view with respect to the parallel plane.

11. In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The insulating layer has a third steeply inclined portion in the second region between the first region and the groove portion that is inclined at an angle greater than 50° with respect to the parallel plane, The semiconductor device according to claim 1, wherein the lower end of the groove is located higher than the upper end of the third steeply inclined portion.

12. It has microlenses, The first region and the vertices of the microlens overlap in a plan view with respect to the parallel plane, The semiconductor device according to claim 1, wherein, in the cross-section, the angle of inclination of the microlens surface with respect to the parallel plane at the position directly above the position closest to the first region of the groove is greater than the angle of inclination of the microlens surface with respect to the parallel plane at the position directly above the end of the first region.

13. The lower electrode is placed on the element substrate, An insulating layer covering the end of the lower electrode and disposed on the element substrate, The lower electrode and the organic layer disposed on the insulating layer, The upper electrode is disposed on the lower electrode and the insulating layer, with the aforementioned organic layer sandwiched between them. The organic layer comprises a first light-emitting layer, a second light-emitting layer, and a charge-generating layer disposed between the first and second light-emitting layers. In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The upper surface of the insulating layer has grooves, The groove portion has a bottom portion and a first steeply inclined portion that is inclined at an angle greater than 50° with respect to a parallel plane parallel to the lower surface of the lower electrode. The length of the first steeply inclined portion in a first direction perpendicular to the parallel plane is smaller than the length in the first direction from the upper surface of the lower electrode to the lower surface of the charge generation layer in the first region where the lower electrode and the organic layer are in contact. A semiconductor device in which the ratio of the length of the groove in the first direction to the length of the opposing upper ends of the grooves in the second direction parallel to the parallel plane is 3.6 or less.

14. The semiconductor device according to claim 13, wherein in the cross-section, the groove portion has a second steeply inclined portion that is inclined at an angle greater than 50° with respect to the parallel plane at a position opposite to the first steeply inclined portion, and a gently inclined portion between the second steeply inclined portion and the bottom portion that is inclined at an angle of 50° or less with respect to the parallel plane.

15. The semiconductor device according to claim 13, wherein, in the cross-section, the length in the second direction of the opposing upper ends of the grooves is greater than twice the length in the first direction from the upper surface of the lower electrode to the lower surface of the charge generation layer in the first region.

16. The semiconductor device according to claim 13, wherein the ratio of the length in the first region from the upper surface of the lower electrode to the lower surface of the charge generation layer to the length of the first steeply inclined portion in the first direction is less than 1.

5.

17. The semiconductor device according to claim 14, wherein the gently sloping portion has a portion that is inclined at an angle of 18° or more with respect to the parallel plane.

18. In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The insulating layer has a third steeply inclined portion in the second region between the first region and the groove portion that is inclined at an angle greater than 50° with respect to the parallel plane, The first light-emitting layer is disposed between the lower electrode and the charge-generating layer. The semiconductor device according to claim 13, wherein the length of the third steeply inclined portion in the first direction is greater than the length in the first direction from the lower electrode to the first light-emitting layer in the first region.

19. In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The insulating layer has a third steeply inclined portion in the second region between the first region and the groove portion that is inclined at an angle greater than 50° with respect to the parallel plane, The first light-emitting layer is disposed between the lower electrode and the charge-generating layer. The semiconductor device according to claim 13, wherein the length of the third steeply inclined portion in the first direction is smaller than the length in the first region from the lower electrode to the charge generation layer in the first direction.

20. In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The insulating layer has a third steeply inclined portion in the second region between the first region and the groove portion that is inclined at an angle greater than 50° with respect to the parallel plane, The first light-emitting layer is disposed between the lower electrode and the charge-generating layer. The semiconductor device according to claim 13, wherein the length of the groove in the first direction is greater than the length of the third steeply inclined portion in the first direction.

21. In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The insulating layer has a third steeply inclined portion in the second region between the first region and the groove portion that is inclined at an angle greater than 50° with respect to the parallel plane, The first light-emitting layer is disposed between the lower electrode and the charge-generating layer. The semiconductor device according to claim 13, wherein the length of the groove in the first direction is smaller than the length of the organic layer in the first region in the first direction.

22. In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The insulating layer has a third steeply inclined portion in the second region between the first region and the groove portion that is inclined at an angle greater than 50° with respect to the parallel plane, The semiconductor device according to claim 13, wherein the third steeply inclined portion and the groove portion overlap the lower electrode when viewed in a plan view with respect to the parallel plane.

23. In a cross-section passing through the lower electrode, the insulating layer, and the organic layer, The insulating layer has a third steeply inclined portion in the second region between the first region and the groove portion that is inclined at an angle greater than 50° with respect to the parallel plane, The semiconductor device according to claim 13, wherein the lower end of the groove is located higher than the upper end of the third steeply inclined portion.

24. It has microlenses, The first region and the vertices of the microlens overlap in a plan view with respect to the parallel plane, The semiconductor device according to claim 13, wherein, in the cross-section, the angle of inclination of the microlens surface with respect to the parallel plane at the position directly above the position closest to the first region of the groove is greater than the angle of inclination of the microlens surface with respect to the parallel plane at the position directly above the end of the first region.

25. A display device comprising a semiconductor device according to any one of claims 1 to 24, and a transistor connected to the lower electrode of the semiconductor device.

26. It comprises an optical unit having multiple lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays the image captured by the image sensor. The photoelectric conversion device is characterized in that the display unit has a semiconductor device according to any one of claims 1 to 24.

27. An electronic device comprising: a display unit having a semiconductor device according to any one of claims 1 to 24; a housing on which the display unit is provided; and a communication unit provided in the housing for communicating with the outside.

28. It has a lens on which an imaging device and a display unit are arranged, and a control device. The display unit is provided with the light-emitting device described in any one of claims 1 to 24. The control device controls the operation of the imaging device and the display unit, characterized in that the eyeglasses are controlled by the control device.

29. An exposure light source having a semiconductor device according to any one of claims 1 to 24, An image forming apparatus having a photoreceptor that is irradiated with light from the exposure light source.

30. It has a vehicle body and a display unit mounted on the vehicle body, The display unit is a mobile body having a semiconductor device as described in any one of claims 1 to 24.

Images