High critical temperature metal nitride layer having an oxide or oxynitride seed layer

Abstract

The present invention provides a device including a seed layer for improving the superconducting critical temperature of a metal nitride layer. [Solution] A device 100 comprising a metal nitride layer 108 used as a superconducting material, wherein the metal nitride layer 108 is disposed on a support structure 102, and the support structure 102 comprises a substrate, such as a silicon wafer. A seed layer structure 103 is formed on the support structure 102, and the seed layer structure 103 comprises a lower seed layer 104 and an upper seed layer 106. A capping layer 110 is deposited on the metal nitride layer 108, which functions as a protective layer to prevent oxidation or other types of contamination or damage to the metal nitride layer 108.

Claims

1. A superconducting device, substrate, A metal oxide seed layer or metal oxynitride seed layer on the substrate, wherein the seed layer is an oxide or oxynitride of a first metal, and A device comprising a metal nitride superconducting layer, which is a nitride of a second metal different from the first metal, directly disposed on the seed layer.

2. The device according to claim 1, wherein the nitride of the second metal is niobium nitride, titanium nitride, or titanium niobium nitride.

3. The device according to claim 2, wherein the metal nitride superconducting layer includes δ-phase NbN.

4. The device according to claim 2, wherein the first metal is aluminum.

5. The device according to claim 1, wherein the metal oxide seed layer or the metal oxynitride seed layer has a thickness of less than 2 nm.

6. The device according to claim 1, wherein the metal oxide seed layer or the metal oxynitride seed layer has a thickness of 3 to 50 nm.

7. The device according to claim 1, wherein the metal oxide seed layer or the metal oxynitride seed layer is an oxide or oxynitride of the first metal.

8. The device according to claim 1, wherein a metal nitride seed layer is included between the metal oxide seed layer or the metal oxynitride seed layer and the substrate.

9. The device according to claim 8, wherein the metal nitride seed layer is a nitride of the first metal.

10. The device according to claim 8, wherein the metal nitride seed layer has a thickness of 3 to 50 nm.

11. The device according to claim 1, further comprising a capping layer on the superconducting layer.

12. The device according to claim 1, further comprising a distributed Bragg reflector between the substrate and the metal oxide seed layer or the metal oxynitride seed layer.

13. The device according to claim 1, further comprising an optical waveguide between the substrate and the metal oxide seed layer or the metal oxynitride seed layer for receiving light propagating substantially parallel to the upper surface of the substrate.

14. The device according to claim 1, wherein the metal nitride superconducting layer has a thickness of 4 to 50 nm.

15. A superconducting device, substrate, The lower seed layer on the substrate, which is a nitride of the first metal, An upper seed layer, which is an oxide or oxynitride of the first metal, is directly placed on the lower seed layer, and A device comprising a superconducting layer, which is a nitride of a second metal different from the first metal, disposed directly on the upper seed layer.

16. The device according to claim 15, wherein the upper seed layer has a thickness of 0.1 to 1 nm.

17. The device according to claim 16, wherein the lower seed layer has a thickness of 3 to 50 nm.

18. The device according to claim 15, wherein the nitride of the second metal is niobium nitride, titanium nitride, or titanium niobium nitride.

19. The device according to claim 18, wherein the first metal is aluminum.

20. A superconducting device, substrate, The aluminum nitride seed layer on the substrate, An aluminum oxide seed layer or an aluminum oxynitride seed layer directly disposed on the aluminum nitride seed layer, and A device comprising a superconducting layer, which is niobium nitride, titanium nitride, or titanium niobium nitride, disposed directly on the upper seed layer.

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