Indication device

JP2026097930AActive Publication Date: 2026-06-16SEMICON ENERGY LAB CO LTD

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
SEMICON ENERGY LAB CO LTD
Filing Date
2026-03-04
Publication Date
2026-06-16

Smart Images

  • Figure 2026097930000001_ABST
    Figure 2026097930000001_ABST
Patent Text Reader

Abstract

To provide a display device or an electronic device with high reliability. 【Solution means】A display device having a first electrode, a second electrode, a light-emitting layer between the first electrode and the second electrode, and a protective film on the second electrode, where the protective film has a first insulating film and a second insulating film on the first insulating film. The first insulating film has one or more of aluminum oxide, hafnium oxide, and zirconium oxide, and the second insulating film has one or more of aluminum oxide, hafnium oxide, and zirconium oxide. The composition of the first insulating film and the second insulating film is different, and the protective film has a water vapor transmission rate of 1×10 -2 g / (m 2 ·day) or less.
Need to check novelty before this filing date? Find Prior Art

Claims

1. It has a first transistor, a second transistor, and a display element, A first semiconductor film having a channel formation region of the first transistor, A first conductive film having a region positioned above the first semiconductor film and functioning as the gate electrode of the first transistor, A first insulating film having a region positioned above the first semiconductor film, A second conductive film having a region positioned above the first insulating film and electrically connected to either the source or drain of the first transistor via a first contact hole in the first insulating film, A second insulating film having a region positioned above the first conductive film and a region positioned above the second conductive film, A second semiconductor film having a region positioned above the second conductive film via the second insulating film, and having a channel formation region for the second transistor, A third conductive film having a region located above the second semiconductor film, via a third insulating film having a region located above the second semiconductor film, and having a function as the first gate electrode of the second transistor, A fourth insulating film having a region positioned above the second semiconductor film and a region positioned above the third conductive film, A fourth conductive film having a region positioned above the fourth insulating film and electrically connected to either the source or the drain of the second transistor via a second contact hole in the fourth insulating film, The fourth conductive film is electrically connected to the pixel electrode of the display element, The second conductive film has a first region which is a region that overlaps with the second semiconductor film and does not overlap with the first semiconductor film. The second conductive film functions as the second gate electrode of the second transistor and is electrically connected to the third conductive film. Display device.

2. It has a first transistor, a second transistor, and a display element, A first semiconductor film having a channel formation region of the first transistor, A first conductive film having a region positioned above the first semiconductor film and functioning as the gate electrode of the first transistor, A first insulating film having a region positioned above the first semiconductor film, A second conductive film having a region positioned above the first insulating film and electrically connected to either the source or drain of the first transistor via a first contact hole in the first insulating film, A second insulating film having a region positioned above the first conductive film and a region positioned above the second conductive film, A second semiconductor film having a region positioned above the second conductive film via the second insulating film, and having a channel formation region for the second transistor, A third conductive film having a region located above the second semiconductor film, via a third insulating film having a region located above the second semiconductor film, and having a function as the first gate electrode of the second transistor, A fourth insulating film having a region positioned above the second semiconductor film and a region positioned above the third conductive film, A fourth conductive film having a region positioned above the fourth insulating film and electrically connected to either the source or the drain of the second transistor via a second contact hole in the fourth insulating film, The fourth conductive film is electrically connected to the pixel electrode of the display element, In a cross-sectional view including the channel formation region and the second contact hole of the second transistor, the second conductive film has a wider region than the third conductive film. The second conductive film has a first region which is a region that overlaps with the second semiconductor film and does not overlap with the first semiconductor film. The second conductive film functions as the second gate electrode of the second transistor and is electrically connected to the third conductive film. Display device.

3. It has a first transistor, a second transistor, and a display element, A first semiconductor film having a channel formation region of the first transistor, A first conductive film having a region positioned above the first semiconductor film and functioning as the gate electrode of the first transistor, A first insulating film having a region positioned above the first semiconductor film, A second conductive film having a region positioned above the first insulating film and electrically connected to either the source or drain of the first transistor via a first contact hole in the first insulating film, A second insulating film having a region positioned above the first conductive film and a region positioned above the second conductive film, A second semiconductor film having a region positioned above the second conductive film via the second insulating film, and having a channel formation region for the second transistor, A third conductive film having a region located above the second semiconductor film, via a third insulating film having a region located above the second semiconductor film, and having a function as the first gate electrode of the second transistor, A fourth insulating film having a region positioned above the second semiconductor film and a region positioned above the third conductive film, A fourth conductive film having a region positioned above the fourth insulating film and electrically connected to either the source or the drain of the second transistor via a second contact hole in the fourth insulating film, The second semiconductor film comprises an oxide semiconductor, The fourth conductive film is electrically connected to the pixel electrode of the display element, The second conductive film has a first region which is a region that overlaps with the second semiconductor film and does not overlap with the first semiconductor film. The second conductive film functions as the second gate electrode of the second transistor and is electrically connected to the third conductive film. Display device.

4. It has a first transistor, a second transistor, and a display element, A first semiconductor film having a channel formation region of the first transistor, A first conductive film having a region positioned above the first semiconductor film and functioning as the gate electrode of the first transistor, A first insulating film having a region positioned above the first semiconductor film, A second conductive film having a region positioned above the first insulating film and electrically connected to either the source or drain of the first transistor via a first contact hole in the first insulating film, A second insulating film having a region positioned above the first conductive film and a region positioned above the second conductive film, A second semiconductor film having a region positioned above the second conductive film via the second insulating film, and having a channel formation region for the second transistor, A third conductive film having a region located above the second semiconductor film, via a third insulating film having a region located above the second semiconductor film, and having a function as the first gate electrode of the second transistor, A fourth insulating film having a region positioned above the second semiconductor film and a region positioned above the third conductive film, A fourth conductive film having a region positioned above the fourth insulating film and electrically connected to either the source or the drain of the second transistor via a second contact hole in the fourth insulating film, The second semiconductor film comprises an oxide semiconductor, The fourth conductive film is electrically connected to the pixel electrode of the display element, In a cross-sectional view including the channel formation region and the second contact hole of the second transistor, the second conductive film has a wider region than the third conductive film. The second conductive film has a first region which is a region that overlaps with the second semiconductor film and does not overlap with the first semiconductor film. The second conductive film functions as the second gate electrode of the second transistor and is electrically connected to the third conductive film. Display device.

5. In claim 3 or claim 4, The oxide semiconductors include In-Ga-Zn oxides, In-Al-Zn oxides, In-Sn-Zn oxides, In-Hf-Zn oxides, In-La-Zn oxides, In-Ce-Zn oxides, In-Pr-Zn oxides, In-Nd-Zn oxides, In-Sm-Zn oxides, In-Eu-Zn oxides, In-Gd-Zn oxides, In-Tb-Zn oxides, and In-Dy-Zn oxides. It is one of the following: oxide, In-Ho-Zn oxide, In-Er-Zn oxide, In-Tm-Zn oxide, In-Yb-Zn oxide, In-Lu-Zn ​​oxide, In-Sn-Ga-Zn oxide, In-Hf-Ga-Zn oxide, In-Al-Ga-Zn oxide, In-Sn-Al-Zn oxide, In-Sn-Hf-Zn oxide, and In-Hf-Al-Zn oxide. Display device.