System and method for controlling gas flow in semiconductor processing systems

Abstract

This relates to the control of harmful process gas flows in semiconductor processing systems. [Solution] The gas system includes an enclosure, a process gas metering valve, a shut-off valve, and a flow switch. The process gas metering valve is located within the enclosure to supply process gas to the process chamber of a semiconductor processing system. A shut-off valve is connected to the process gas metering valve to fluidly isolate it from the process gas supply source. A flow switch is operably connected to the shut-off valve to stop the flow of process gas to the process chamber of the semiconductor processing system using the shut-off valve, according to the gas flow across the flow switch. A semiconductor processing system, a gas control method, and a gas system kit are also described.

Description

Technical Field

[0001] The present disclosure generally relates to the control of gas flow in a semiconductor processing system, and more specifically, to the control of harmful process gas flow in a semiconductor processing system.

Background Art

[0002] Process tools used to manufacture semiconductor devices employ process gases to perform various process operations during the manufacture of semiconductor devices, for example, to deposit a film onto a substrate during the manufacture of very large scale integrated circuit devices, solar cells, and displays. The process gas generally flows from a process gas source to a process tool through a metering device that regulates the flow of the process gas, and the metering device adjusts the flow of the process gas according to the processing requirements of the process tool that employs the process gas. During processing, the process tool typically emits an exhaust stream that may contain residual process gas and / or various process gas products. Since the residual process gas and / or various process gas products may be harmful (e.g., flammable and / or toxic), an inert gas may be mixed with the residual process gas products and / or process gas products to limit (or remove) the potential hazards associated with the residual process gas and / or process gas products that would otherwise be exhausted by the process tool.

[0003] One challenge to mixing inert gases into exhaust flows is the cost associated with certain inert gases. For example, to ensure that the concentration of potentially hazardous compounds in the exhaust flow is sufficiently low, the flow of inert gas supplied to the process tool (e.g., mass flow or volume flow) may be sized to take into account the maximum flow rate of process gas supplied to the process tool, such as when a process gas supply valve is inadvertently driven to the fully open position. While the inert gas flow rate is generally satisfactory as long as it is sufficient to reduce the hazards associated with relatively high flow rates of residual process gas and / or process gas products, the policy also means that the inert gas flow rate is routinely higher than what is required by the process employed by the process tool. This increases the operating costs of the process tool due to the consumption of inert gas. This also requires certain process tool accessories, such as aeration systems and / or exhaust pollution systems, to be larger than would otherwise be possible.

[0004] One approach to limiting the costs associated with inert gases is to employ flow limiters or flow governors in the process gas supply line. Flow limiters and flow governors may be used to restrict the flow of process gas from the supply side to the process tool (e.g., indoor or bulk supply of process gas) when sized to be less than the flow rating of the process gas valve and greater than the process flow required by the process tool. However, while effective in limiting the inert gas requirements of the process tool, flow limiters and flow governors are typically too large for the process gas flow required by the process tool. As a result, the flow rate of inert gas supplied to the process tool is still higher than what is separately required by the process tool, and the operating costs of the process tool are higher than those separately required due to the inert gas requirements.

[0005] Such systems and methods have generally been accepted for their intended purposes. However, there remains a need for improved gas systems, semiconductor processing systems with gas systems, and methods for controlling process gas flow in semiconductor processing systems. This disclosure provides a solution to this need. [Overview of the Initiative] [Means for solving the problem]

[0006] A gas system is provided. The gas system includes an enclosure, a process gas metering valve, a shut-off valve, and a flow switch. The process gas metering valve is located within the enclosure and is configured to supply process gas to the process chamber of the semiconductor processing system. The shut-off valve is connected to the process gas metering valve and is configured to fluidly isolate the process gas metering valve from the process gas supply source. The flow switch is operably connected to the shut-off valve and is configured to use the shut-off valve to stop the flow of process gas to the process chamber of the semiconductor processing system according to the flow of gas across the flow switch.

[0007] In addition to one or more of the features described above, or in other ways, further embodiments may include at least one of the shut-off valve and flow switch being located outside the enclosure.

[0008] In addition to one or more of the features described above, or in other ways, further embodiments may include the flow switch being fluidly coupled to a shut-off valve and a process gas metering valve.

[0009] In addition to one or more of the features described above, or in other ways, further embodiments may include the flow switch being fluidly separated from the shut-off valve.

[0010] In addition to one or more of the features described above, or in other ways, further embodiments may include the flow switch having a shut-off trigger, the process gas metering valve having a flow rate rating, and the shut-off trigger of the flow switch being less than the flow rate rating of the process gas metering valve.

[0011] In addition to one or more of the features described above, or in other ways, further embodiments may include a relay connecting the flow switch to the shut-off valve.

[0012] In addition to one or more of the features described above, or in other ways, further embodiments may include a controller that connects the flow switch to a shut-off valve.

[0013] In addition to one or more of the features described above, or in other ways, further embodiments may include the flow switch being a process gas flow switch connected to a shut-off valve, and the gas system further including a process gas supply source connected to the process gas flow switch and a process chamber connected to a process gas metering valve. The process gas flow switch may fluidly connect the process gas supply source to the process chamber.

[0014] In addition to one or more of the features described above, or in other ways, further embodiments may include the process gas supply source containing a silicon-containing gas.

[0015] In addition to one or more of the features described above, or in other ways, further embodiments may include a process gas source being a first process gas source, a process gas flow switch being a first process gas flow switch, and a shut-off valve being a first shut-off valve. The gas system may further include a second process gas source, a second process gas flow switch connected to the second process gas source, and a second shut-off valve connected to the second process gas flow switch. The second shut-off valve may fluidly connect the second process gas source to a process chamber. The second process gas flow switch may be operably connected to the second shut-off valve.

[0016] In addition to one or more of the features described above, or in other ways, further embodiments may include a foreline, a vacuum pump, an inert gas flow switch, and an inert gas source. The foreline may be connected to a process chamber, the vacuum pump may be connected to the foreline, and the inert gas flow switch may be connected to the vacuum pump. The inert gas source may be connected to the inert gas flow switch, or through it may be fluidly connected to the vacuum pump, and the inert gas flow switch may be operably connected to a shut-off valve.

[0017] In addition to one or more of the features described above, or in another manner, further embodiments may include a flow switch being an inert gas flow switch, and the gas system further comprising a process gas supply source connected to a shut-off valve, a process chamber connected to a process gas metering valve and through which it is fluidly connected to the process gas supply source, a vacuum pump connected to the process chamber, and an inert gas supply source connected to an inert gas flow switch and through which it is fluidly connected to the vacuum pump.

[0018] In addition to one or more of the features described above, or in another manner, further embodiments may include the inert gas flow switch having an inert gas shut-off trigger and being configured to close a shut-off valve when the flow of inert gas across the inert gas flow switch and to the vacuum pump is less than the inert gas shut-off trigger.

[0019] In addition to one or more of the features described above, or in other ways, further embodiments may include the flow switch being a process gas flow switch, and the gas system further including a foreline fluidly coupled to a process gas metering valve, a vacuum pump connected to the foreline, and an inert gas flow switch fluidly coupled to the vacuum pump and, through it, to the foreline. The inert gas switch may be operably connected to a shut-off valve.

[0020] In addition to one or more of the features described above, or in other ways, further embodiments may include the inert gas flow switch having an inert gas shut-off trigger, and the inert gas flow switch being configured to close a shut-off valve when the flow of inert gas across the inert gas flow switch is less than the inert gas shut-off trigger.

[0021] In addition to one or more of the features described above, or in other ways, further embodiments may include the inert gas flow switch being a first inert gas flow switch, and the gas system further including an exhaust conduit and a second inert gas flow switch. The exhaust conduit may be connected to a vacuum pump. The second inert gas flow switch may be fluidly connected to the exhaust conduit and through it to the vacuum pump. The second inert gas flow switch may be operably connected to the flow switch.

[0022] A semiconductor processing system is provided. The semiconductor processing system includes the gas system described above, a process gas supply source, a process chamber, and a substrate support. The process gas supply source is connected to a process gas flow switch. The process chamber is fluidly connected to the flow switch by a process gas metering valve and a shut-off valve. The substrate support is placed inside the process chamber and is configured to seat a substrate on it during film deposition on the substrate using the process gas supplied by the process gas supply source. The flow switch is a process gas flow switch with a process gas shut-off trigger, the process gas metering valve has a flow rate rating, and the process gas shut-off trigger of the process gas flow switch is less than the flow rate rating of the process gas metering valve.

[0023] A gas flow control method is provided. The method includes, in the gas system described above, supplying process gas to a flow switch, comparing the flow of process gas with a shut-off trigger of the flow switch, and, when the flow of process gas is less than the shut-off trigger of the flow switch, flowing the process gas through a shut-off valve to a process gas metering valve, and through the metering valve to the process chamber of the semiconductor processing system. When the flow of process gas is greater than the shut-off trigger of the flow switch, the flow of process gas through the shut-off valve and through it to the process chamber of the semiconductor processing system is stopped.

[0024] In addition to one or more of the features described above, or in other ways, further embodiments may include further comprising flowing a process gas through a shut-off valve to deposit a film onto a substrate using the process gas.

[0025] In addition to one or more of the features described above, or in other ways, further embodiments may include stopping the flow of process gas to stop the deposition of a film on the substrate.

[0026] Another gas control method is provided. The gas control method, in the gas system as described above, includes providing an inert gas to a flow switch, comparing the flow of the inert gas with a cut-off trigger of the flow switch, and when the flow of the inert gas is greater than the cut-off trigger of the flow switch, flowing a process gas through a shut-off valve to a process gas metering valve and then through the metering valve to a process chamber of a semiconductor processing system. When the flow of the inert gas is less than the cut-off trigger of the flow switch, the flow of the process gas through the shut-off valve and to the process chamber of the semiconductor processing system stops.

[0027] In addition to one or more of the features described above, or as another method, a further embodiment may include that the flow switch is an inert gas flow switch, the gas system further includes a process gas flow switch, the method further includes providing a process gas to the process gas flow switch, comparing the flow of the process gas with a process gas cut-off trigger of the process gas flow switch, and when the flow of the process gas is less than the process gas cut-off trigger of the process gas flow switch, flowing the process gas through the shut-off valve to the process gas metering valve. When the flow of the process gas is greater than the process gas cut-off trigger of the process gas flow switch, the flow of the process gas through the shut-off valve stops.

[0028] This "Summary of the Invention" is provided to introduce selected concepts in a simplified form. These concepts are described in more detail in the following "Detailed Description of the Invention" of the present disclosure. This "Summary of the Invention" is not intended to identify the main features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0029] These and other features, aspects, and advantages of the invention disclosed herein are described below with reference to the drawings of certain embodiments, which are intended to illustrate the invention and not to limit the invention.

Brief Description of the Drawings

[0030] [Figure 1] FIG. 1 is a schematic diagram of a semiconductor processing system according to the present disclosure, showing a gas system that fluidly connects a process gas supply source and an inert gas supply source to a process chamber. [Figure 2] FIG. 2 is a schematic diagram of the gas system of FIG. 1, showing a flow switch of the gas system operably connected to a shut-off valve of the gas system so as to stop the flow of process gas to the process chamber according to the flow of gas across the flow switch. [Figure 3] FIG. 3 is a schematic diagram of the semiconductor processing system of FIG. 1 according to an embodiment, showing a gas system that fluidly connects a process gas supply source to a process chamber through a process gas flow switch. [Figure 4] FIG. 4 is a schematic diagram of the semiconductor processing system of FIG. 1 according to another embodiment, showing a gas system that fluidly connects a first process gas supply source and a second process gas supply source to a process chamber through a first process gas flow switch and a second process gas flow switch. [Figure 5] FIG. 5 is a schematic diagram of the semiconductor processing system of FIG. 1 according to a further embodiment, showing a gas system that fluidly connects an inert gas supply source to an exhaust source and an exhaust conduit through an inert gas flow switch. [Figure 6] FIG. 6 is a schematic diagram of the semiconductor processing system of FIG. 1 according to another embodiment, showing a gas system that fluidly connects an inert gas supply source to an exhaust source and an exhaust conduit through a first inert gas flow switch and a second inert gas flow switch. [Figure 7] FIG. 7 is a schematic diagram of the gas system and the semiconductor processing system of FIG. 1 according to a further embodiment, showing a gas system that fluidly connects a process gas supply source and an inert gas supply source to a process chamber through a process gas flow switch and an inert gas flow switch. [Figure 8]Figure 8 is a block diagram of a method for controlling gas flow in a semiconductor processing system, illustrating the operation of stopping the flow of process gas into the process chamber using a gas flow across a flow switch. [Figure 9] Figure 9 is a block diagram of another method of controlling gas flow in a semiconductor processing system, illustrating the operation of stopping the flow of process gas into the process chamber using the flow of process gas across a process gas flow switch. [Figure 10] Figure 10 is a block diagram of a further method for controlling gas flow in a semiconductor processing system, illustrating the operation of stopping the flow of process gas into the process chamber using an inert gas flow across an inert gas flow switch. [Figure 11] Figure 11 is a block diagram of yet another method of controlling gas flow in a semiconductor processing system, illustrating the operation of stopping the flow of process gas into the process chamber using the flow of process gas and inert gas across a process gas flow switch and an inert gas flow switch. [Figure 12] Figure 12 is a schematic diagram of the gas control kit for semiconductor processing systems according to this disclosure, showing the elements of the kit.

[0031] Naturally, the elements in the figures are illustrative for simplification and clarity and are not necessarily depicted to actual size. For example, the relative sizes of some of the elements in the figures may be exaggerated relative to others to help improve understanding of the illustrated embodiments of this disclosure. [Modes for carrying out the invention]

[0032] Here, similar reference numerals refer to drawings that identify similar structural features or embodiments of the present disclosure. For illustrative and illustrative purposes, and not for limiting purposes, partial diagrams of embodiments of semiconductor processing systems having gas systems according to the present disclosure are shown in Figure 1, generally designated by reference numeral 100. Other embodiments of gas systems, semiconductor processing systems, and methods for controlling gas flow within semiconductor processing systems according to the present disclosure or embodiments thereof are provided in Figures 2 to 12, as described. The systems and methods of the present disclosure can be used to limit the mass flow of inert gas required by semiconductor processing systems and / or to enhance the safety of semiconductor processing systems, such as semiconductor processing systems that employ potentially hazardous process gases during film deposition on a substrate; however, the present disclosure is generally not limited to any particular type of semiconductor processing system or process gas.

[0033] Referring to Figure 1, the semiconductor processing system 100 is shown according to an embodiment. As shown in Figure 1, the semiconductor processing system 100 includes a process chamber 102 and a gas system 104. The semiconductor processing system 100 also includes a process gas supply source 106, an inert gas supply source 110, a ventilation source 108, and a vacuum source 112. The semiconductor processing system 100 further includes a process gas supply source conduit 114, a process gas supply conduit 116, an inert gas conduit 118, a ventilation conduit 120, a foreline 122, and an exhaust conduit 124.

[0034] The process chamber 102 includes a substrate support 126, an injection flange 128, and an exhaust flange 130. The substrate support 126 is located inside the process chamber 102 and is configured to support the substrate 10 during the deposition of a film 12 onto the substrate 10 using the process gas 14. The injection flange 128 is connected to a process gas source conduit 114 and is fluid-coupled to the inside of the process chamber 102 to allow the process gas 14 to flow through the inside of the process chamber 102. The exhaust flange 130 is connected to a foreline 122 and is fluid-coupled to the inside of the process chamber 102 to allow residual process gas and / or process gas products 16 to flow into the foreline 122. The process chamber 102 may also be shown and described in U.S. Patent No. 10,167,557 by Hawkins et al., issued January 1, 2019, the contents of which are incorporated herein by reference in their entirety.

[0035] The gas system 104 is connected to the process gas source conduit 114 and fluidly coupled to the process chamber 102 through it. The gas system 104 is also connected to the process gas source conduit 114 and fluidly coupled to the process gas source 106 through it. The gas system 104 is further fluidly coupled to the vent conduit 120 and through it to the vent source 108. In certain embodiments, the gas system 104 may be located along the inert gas conduit 118 and fluidly coupled to both the inert gas source 110 and the vacuum source 112 through it.

[0036] The process gas source 106 is connected to the process gas source conduit 114 and fluidly connected to the process chamber 102 through it. The process gas source 106 is intended to be configured to supply process gas 14 to the process chamber 102 through the process gas source conduit 114 and the process gas supply conduit 116. In certain embodiments, the process gas source 106 may contain a silicon-containing gas. Examples of suitable silicon-containing gases include silane (SiH4), dichlorosilane (DCS), and trichlorosilane (TCS). According to certain embodiments, the process gas source 106 may contain a halide-containing gas. Examples of suitable halides include chlorine (Cl), fluorine (F), and hydrochloric acid (HCl). Also, according to certain embodiments, the process gas source 106 may contain a germanium-containing gas or a dopant-containing gas. An example of a suitable germanium-containing gas is germane (GeH4). Suitable dopants include boron (B), arsenic (Ar), and phosphorus (Ph).

[0037] The ventilation source 108 is connected to the ventilation conduit 120 and through it is fluidly coupled to the gas system 104. The ventilation source 108 is intended to be fluidly isolated from the process chamber 102 and to provide ventilation to one or more process gas transport structures of the gas system 104. In certain embodiments, the ventilation source 108 may include a blower or fan 132. The blower or fan 132 may be arranged to draw ventilation gas 28 through the gas system 104. The blower or fan 132 may also be arranged to drive the ventilation gas 28 through the gas system 104, as is suitable for the arrangement of the semiconductor processing system 100.

[0038] The inert gas source 110 is connected to an inert gas conduit 118 and fluidly coupled to a vacuum source 112 through it. In certain embodiments, the inert gas source 110 may be fluidly coupled to the vacuum source 112 by a gas system 104. According to certain embodiments, the inert gas source 110 may be fluidly separated from the gas system 104. The inert gas source 110 is intended to contain an inert gas 20. In certain embodiments, the inert gas 20 may contain nitrogen (N2), such as high-purity nitrogen (HPN). According to certain embodiments, the inert gas 20 may contain a noble gas. Examples of suitable noble gases include argon (Ar), helium (He), krypton (Kr), and mixtures thereof.

[0039] The vacuum source 112 is connected to the foreline 122 and through it is fluid-coupled to the process chamber 102. The vacuum source 112 is also connected to the inert gas conduit 118 and through it is fluid-coupled to the inert gas supply source 110. The vacuum source 112 is further connected to the exhaust conduit 124 and through it is fluid-coupled to the external environment 22. In certain embodiments, the vacuum source 112 may be fluid-coupled to the external environment 22 through an abatement device 134 such as a scrubber and / or nitrogen oxide abatement device. According to certain embodiments, the exhaust conduit 124 may also be connected to the inert gas conduit 118, thereby connecting the inert gas supply source 110 to both the vacuum source 112 and the exhaust conduit 124. According to certain embodiments, the vacuum source 112 may include a vacuum source 112 configured to maintain a predetermined deposition pressure within the process chamber 102 during the deposition of the film 12 onto the substrate 10.

[0040] During the deposition of the film 12 onto the substrate 10, the substrate 10 is supported within the process chamber 102 and also on the substrate support 126. An inert gas supply source 110 provides inert gas 20 to a vacuum source 112, and a process gas supply source 106 provides process gas 14 to the process chamber 102. The process chamber 102 flows the process gas 14 over the substrate 10 at a predetermined flow rate (e.g., mass flow rate or volume flow rate) selected to deposit the film 12 onto the substrate 10, and then discharges the residual process gas and / or process gas products 16 to the foreline 122. The foreline 122 discharges the residual process gas and / or process gas products 16 to the vacuum source 112, which mixes the inert gas 20 received from the inert gas supply source 110 with the residual process gas and / or process gas products 16 to form exhaust gas 18. In this regard, the inert gas 20 limits (or eliminates) the hazards associated with the residual process gas and / or process gas products 16 by, for example, reducing its toxicity and / or concentration to below the concentration required for combustion, thereby making the residual process gas and / or process gas products 16 safe for communication with the exhaust conduit 124. As those skilled in the art will understand from the perspective of this disclosure, the flow rate of the inert gas 20 required to make the residual process gas and / or process gas products 16 safe is selected considering the maximum flow rate of process gas 14 that may be supplied to the process chamber 102. Typically, the flow rate of the inert gas 20 corresponds to the flow rate rating 136 (shown in Figure 2) of the process gas metering valve 138 (shown in Figure 2) and / or the opening plate 140 (shown in Figure 2) located along the process gas supply conduit 114, rather than the smaller flow rate of process gas 14 that is normally supplied to the process chamber 102 during the deposition of the film 12 on the substrate 10. This is to ensure that the exhaust gas 18 is safely released even if the process gas metering valve 138 moves to (or becomes fixed in) the fully open position.As can also be understood by those skilled in the art in relation to the present disclosure, this generally means that the flow rate of the inert gas 20 to the vacuum source 112 is greater than the flow rate required by the process chamber 102 during the deposition of the film 12 onto the substrate 10. As can also be understood by those skilled in the art, this makes the operating costs of the semiconductor processing system 100 higher than they would otherwise be, and / or makes certain elements of the semiconductor processing system 100, such as the aeration source 108 and / or the abatement device 134, larger than they would otherwise be. To limit these operating costs of the semiconductor processing system 100 and / or enhance the safety of the semiconductor processing system 100, the gas system 104 includes a flow switch 142.

[0041] Referring to Figure 2, the gas system 104 is shown. The gas system 104 includes a process gas metering valve 138, a flow switch 142, an enclosure 144, and a shut-off valve 146. The process gas metering valve 138 is located within the enclosure 144 and is configured to direct the process gas 14 to the process chamber 102 (shown in Figure 1) of the semiconductor processing system 100 (shown in Figure 1). The shut-off valve 146 is connected to the process gas metering valve 138 and is configured to fluidically isolate the process gas metering valve 138 from the process gas supply source 106 (shown in Figure 1). The flow switch 142 is operably connected to the shut-off valve 146 and is configured to use the shut-off valve 146 to stop the flow of process gas 14 to the process chamber 102 of the semiconductor processing system 100, according to the flow of gas (process gas 14 or inert gas 20 (shown in Figure 1)) crossing the flow switch 142.

[0042] In certain embodiments, the enclosure 144 may be connected to a vent conduit 120 (shown in Figure 1) such that the interior of the enclosure 144 is fluidly connected to a vent source 108. As will be understood by those skilled in the art in relation to the present disclosure, the fluid connection to the vent source 108 allows the vent source 108 to vent a gas transport structure (e.g., a process gas metering valve 138) located inside the enclosure 144. In this regard, the vent source 108 may drive (or draw out) a vent gas 28 (shown in Figure 1) through the interior of the enclosure 144. In certain embodiments, the enclosure 144 may include a gas cabinet structure. An example of a suitable gas cabinet structure is the FirstNano® gas cabinet, available from CVD Equipment Corporation (Central Iceslip, New York, USA).

[0043] The process gas metering valve 138 is connected to the process gas supply conduit 116 and also fluidly connects the process chamber 102 (shown in Figure 1) to the process gas supply source 106 (shown in Figure 1). In certain embodiments, the flow rate rating 136 of the process gas metering valve 138 corresponds to the maximum flow rate (e.g., mass flow rate or volume flow rate) of the process gas 14 that the process gas metering valve 138 may flow into the process chamber 102. The flow rate rating 136 of the process gas metering valve 138 is intended to be greater than the normal deposition flow rate of the process gas 14 required for the deposition of the film 12 (shown in Figure 1) onto the substrate (shown in Figure 1) 10. For example, the flow rate rating 136 may be between 2 and 5 times the nominal deposition flow rate of the process used to deposit the film 12 onto the substrate 10, or between 1.5 and 10 times the nominal deposition flow rate, or even between 1.25 and 20 times the nominal deposition flow rate.

[0044] In certain embodiments, the process gas metering valve 138 may include a mass flow controller (MFC) 148. In such embodiments, the MFC 148 may include a mass flow meter (MFM) 150 and a servo control valve 152. The servo control valve 152 may be configured to fluidly connect the MFM 150 to the process gas supply conduit 116 and to alter the mass flow of process gas 14 (shown in Figure 1) into the process chamber 102 (shown in Figure 1). The MFM 150 may then fluidly connect the servo control valve 152 to the process chamber 102 to monitor the flow rate of process gas 14 into the process chamber 102, compare the flow rate to a predetermined deposition flow rate during the deposition of the membrane 12 (substrate 10) onto the substrate 10, and drive the flow rate of process gas 14 to the predetermined deposition flow rate (shown in Figure 1). An example of a suitable MFC system is the FMA-LP2600A, available from Omega Engineering, Inc. (Norwalk, Connecticut, USA). A suitable example of an MFM (Method-Fueled Process) apparatus is the FMC-5501LA, available from Omega Engineering, Inc. (Norwalk, Connecticut, USA). A specific arrangement of the process gas metering valve 138 is shown in Figure 2, but other types of process gas metering valves, such as manual valves and valves that operate in different ways, may be used and should be understood and recognized as being within the scope of this disclosure.

[0045] The shut-off valve 146 is configured to provide selective fluid communication between the process gas source 106 (shown in Figure 1) and the process gas metering valve 138. In this regard, the shut-off valve 146 may be connected to the process gas source conduit 114 and through it to the process gas source 106. In further regard, the shut-off valve 146 may have a normally open configuration, and the shut-off valve 146 is intended to fluidly connect the process gas source 106 to the process gas metering valve 138. In certain embodiments, the shut-off valve 146 may be located inside the enclosure 144. According to certain embodiments, the shut-off valve 146 may be located outside the enclosure 144. According to certain embodiments, the shut-off valve 146 may also be located inside the housing 154 (e.g., facility housing) to form a kit of the shut-off valve 146 together with the flow switch 142 according to the deposition process employed by the process chamber 102 (shown in Figure 1). A suitable example of a shut-off valve is the 930 series ultra-high purity valve, available from Parker-Hannifin Corporation (Cleveland, Ohio, USA).

[0046] The flow switch 142 is fluidly coupled to a gas source to control the flow of process gas 14 into the process chamber 102 (shown in Figure 1) according to the flow rate of gas passing through the flow switch 142. In this regard, the flow switch 142 is intended to have a shut-off trigger 156, which is configured to compare the flow rate of gas passing through the flow switch 142 with a shut-off trigger 156, and which is further configured to provide a shut-off signal 158 based on the comparison of the flow rate of gas passing through the flow switch 142 (e.g., mass flow rate or volume flow rate) with the shut-off trigger 156. The operational relationship between the flow switch 142 and the shut-off valve 146 is further intended to be such that the shut-off valve 146 closes when the flow switch 142 provides a shut-off signal 158. A suitable example of a flow switch is the V8F series flow switch available from Precision Sensors Corporation (Milford, Connecticut, USA).

[0047] In certain embodiments, the flow switch 142 may be fluidly coupled to a process gas supply source 106 (shown in Figure 1) and may be configured to provide a shut-off trigger 156 when the flow of process gas 14 across the flow switch 142 is greater than the shut-off trigger 156. According to certain embodiments, the shut-off trigger 156 may be less than the flow rate rating 136 of the process gas metering valve 138. Advantageously, embodiments of the gas system 104 in which the shut-off trigger 156 of the flow switch 142 is less than the flow rate rating 136 of the process gas metering valve 138 may limit the flow rate of inert gas 20 required by the semiconductor processing system 100, and consequently limit the costs associated with the operation of the semiconductor processing system 100. Limiting the flow rate of inert gas 20 required by the semiconductor processing system 100 may also reduce the cost of the semiconductor processing system 100 by, for example, limiting the required aeration and / or abatement and limiting the costs associated with the aeration source 108 (shown in Figure 1) and / or abatement device 134 (shown in Figure 1). In a particular embodiment, the flow switch 142 may be fluidly coupled to an inert gas supply source 110 (shown in Figure 1) and may be configured to provide a shut-off trigger 156 when the flow of inert gas 20 is less than the shut-off trigger 156. Advantageously, in such embodiments, the flow switch 142 enhances the safety of the semiconductor processing system 100 by closing a shut-off valve 146 if the flow rate of inert gas 20 is less than required to deactivate the flow of residual process gas and / or process gas products 16 emitted by the process chamber 102. As will be understood by those skilled in the art in relation to the present disclosure, this reduces (or eliminates) the possibility of continuing to flow process gas 14 into the process chamber 102 if the flow of inert gas 20 to the vacuum source 112 is interrupted.

[0048] In a particular embodiment, the gas system 104 may include a relay 160. In such an embodiment, the relay 160 may operably connect the flow switch 142 to the shut-off valve 146. The relay 160 may be configured to close the shut-off valve 146 when the flow switch 142 provides a shut-off signal 158. The relay 160 may be located, for example, in the same location inside the enclosure 144. The relay 160 may be located outside the enclosure 144. It is also intended that the relay 160 may be located inside the housing 154. Advantageously, the use of the relay 160 allows the shut-off valve 146 to close in response to any one of the multiple flow switches monitoring the gas flow in embodiments of the gas system 104 employing two or more flow switches. For example, the flow switch 142 may provide a 24-volt DC output that drops to 0 volts based on a comparison of the gas flow rate across the flow switch 142 with the shut-off trigger 156, and the relay 160 may be configured to close the shut-off valve 146 when one (or more) of the 24-volt DC outputs applied to the relay 160 drops to 0 volts. A suitable embodiment of the relay is the G9SA safety relay unit, available from Omron Corporation (Kyoto, Japan).

[0049] Furthermore, according to certain embodiments, the gas system 104 may also include a controller 162. The controller 162 may operably connect the flow switch 142 to the shut-off valve 146, and may be configured to close the shut-off valve 146 when the flow switch 142 provides a shut-off signal 158. In certain embodiments, the controller 162 may be located inside the enclosure 144. According to certain embodiments, the controller 162 may be located outside the enclosure 144. Also, according to certain embodiments, the controller 162 may be located inside the housing 154. Advantageously, the adoption of the controller 162 allows the gas system 104 to provide additional functions related to the closing of the shut-off valve 146, such as operator alarms and / or logging, such as monitoring the flow switch output voltage, in non-limiting examples. A preferred controller embodiment is the EK1960 Twinsafe safety controller, available from Beckhoff Automation Company (Ferhl, Germany).

[0050] Referring to Figure 3, a semiconductor processing system 100 is shown according to an embodiment that includes a gas system 204. The gas system 204 is similar to the gas system 104 (shown in Figure 1) and additionally includes a process gas flow switch 242. The process gas flow switch 242 has a process gas shut-off trigger 256 and is connected to a process gas supply 106 and also fluidly connects the process gas supply 106 to a shut-off valve 146. The process gas flow switch 242 is intended to be configured to provide a process gas shut-off signal 258 when the flow rate of process gas 14 through the process gas flow switch 242 is greater than the process gas shut-off trigger 256, for example, when the flow rate of process gas 14 rises above the process gas shut-off trigger 256, prompting the closing of the shut-off valve 146 at a process gas flow rate greater than the process gas shut-off trigger 256.

[0051] During the deposition of the film 12 onto the substrate 10, a process gas supply source 106 provides process gas 14 to a process gas flow switch 242, a ventilation source 108 provides ventilation gas 28 to the inside of the enclosure 144, and an inert gas supply source 110 provides inert gas 20 to a vacuum source 112. As the process gas 14 passes through the process gas flow switch 242, the process gas flow switch 242 compares the flow rate of the process gas 14 with a process gas shut-off trigger 256. When the flow rate of the process gas 14 is less than the process gas shut-off trigger 256, the shut-off valve 146 remains open, and the process gas 14 flows into the process chamber 102 through the shut-off valve 146 and the process gas metering valve 138. When the flow rate of the process gas 14 is greater than the process gas shut-off trigger 256, the process gas flow switch 242 provides a process gas shut-off signal 258. The process gas shut-off signal 258, if present, causes the shut-off valve 146 to close. Closing the shut-off valve 146 then stops the flow of process gas 14 to the process chamber 102 and stops the emission of residual process gas and / or process gas products 16 from the process chamber 102. As those skilled in the art will understand in view of this disclosure, this may limit the flow of residual process gas and / or process gas products 16 to the vacuum pump according to the difference between the process gas shut-off trigger 256 of the process gas flow switch 242 and the flow rate rating 136 of the process gas metering valve 138.

[0052] Advantageously, the process gas flow switch 242 may reduce the flow rate of the inert gas 20 required by the process chamber 102 to balance the difference between the process gas shut-off trigger 256 and the flow rate rating 136 of the process gas metering valve 138. In certain embodiments, the process gas shut-off trigger 256 may be smaller than the flow rate rating 136 of the process gas metering valve 138. For example, the process gas shut-off trigger 256 may be about 10% to about 90% of the flow rate rating 136, or about 30% to about 80% of the flow rate rating 136, or about 50% to about 70% of the flow rate rating 136. Setting the process gas shut-off trigger 256 of the process gas flow switch 242 to be smaller than the flow rate rating 136 of the process gas metering valve 138 allows the flow rate of inert gas 20 required by the process chamber 102 to be smaller than the flow rate rating 136 of the process gas metering valve 138, thereby limiting the consumption of inert gas and reducing the operating costs of the semiconductor processing system 100. The cooperation between the process gas flow switch 242 and the shut-off valve 146 may also enhance the safety of the semiconductor processing system 100 by preventing process gas 14 from flowing into the process chamber 102 at a flow rate exceeding the flow rate required to deposit the film 12 onto the substrate 10, for example, when the process recipe drives the process gas metering valve 138 to the fully open position. Furthermore, the cooperation between the process gas flow switch 242 and the shut-off valve 146 may also limit the flow rate of the venting gas 28 required to ventilate the enclosure 144 and / or the capacity of the abatement device 134.

[0053] Referring to Figure 4, the semiconductor processing system 100 is shown according to an embodiment that includes a gas system 304. The gas system 304 is similar to the gas system 104 (shown in Figure 1) and additionally includes a first process gas flow switch 342, a second process gas flow switch 360, a first shut-off valve 346, and a second shut-off valve 362. The first process gas flow switch 342 and the first shut-off valve 346 fluidly connect the first process gas source 306 to the process chamber 102 through the first process gas metering valve 338. The second process gas flow switch 360 and the second shut-off valve 362 fluidly connect the second process gas source 364 to the process chamber 102 through the second process gas metering valve 366.

[0054] The first process gas flow switch 342 is intended to have a first process gas shut-off trigger 356. The first process gas flow switch 342 is also intended to be configured to provide a first process gas shut-off signal 358 when the flow rate of the first process gas 14 crossing the first process gas flow switch 342 is greater than the first process gas shut-off trigger 356. The second process gas flow switch 360 is further intended to have a second process gas shut-off trigger 368 and to be configured to provide a second process gas shut-off signal 370 when the flow rate of the second process gas 24 is greater than the second process gas shut-off trigger 368. While two process gas sources and associated flow switches are shown in the exemplary embodiments, it should be understood and recognized that the example gas system 304 may have three or more process gas flow switches and associated shut-off valves, and remains within the scope of this disclosure.

[0055] During the deposition of the film 12 on the substrate 10, the first process gas supply source 306 provides the first process gas 14 to the first process gas flow switch 342, and the second process gas supply source 364 provides the second process gas 24 to the second process gas flow switch 360. As the first process gas 14 passes through the first process gas flow switch 342, the first process gas flow switch 342 compares the flow rate of the first process gas 14 with the first process gas shut-off trigger 356. When the flow rate of the first process gas 14 is less than the first process gas shut-off trigger 356, the first shut-off valve 346 remains open, and the first process gas 14 flows into the process chamber 102 through the first shut-off valve 346 and the first process gas metering valve 338. Similarly, when the second process gas passes through the second process gas flow switch 360, the second process gas flow switch 360 compares the flow rate of the second process gas 24 with the second process gas shut-off trigger 368, and if the flow rate of the second process gas 24 is less than the second process gas shut-off trigger 368, the second shut-off valve 362 may remain open.

[0056] If the flow rate of the first process gas 14 is greater than that of the first process gas shut-off trigger 356, the first process gas flow switch 342 provides a first process gas shut-off signal 358. The first process gas shut-off signal 358, if present, causes at least the first shut-off valve 346 to close. Closing the first shut-off valve 346 then stops the flow of the first process gas 14 into the process chamber 102, and subsequently stops the emission of residual process gas and / or process gas products 16 from the process chamber 102 to the vacuum source 112. In certain embodiments, the first process gas shut-off signal 358 may also cause a second shut-off valve 362 to close, which may also stop the emission of residual process gas and / or process gas products 16 associated with the second process gas 24 from the process chamber 102.

[0057] Similarly, when the flow rate of the second process gas 24 is greater than the second process gas shut-off trigger 368, the second process gas flow switch 360 provides a second process gas shut-off signal 370. The second process gas shut-off signal 370, if present, causes at least the second shut-off valve 362 to close. Closing the second shut-off valve 362 then stops the flow of the second process gas 24 into the process chamber 102, and the emission of residual process gas and / or process gas products 16 associated with the second process gas 24 from the process chamber 102 subsequently stops. In certain embodiments, the second process gas shut-off signal 370 may also cause the second shut-off valve 362 to close, which may also stop the emission of residual process gas and / or process gas products 16 from the process chamber 102.

[0058] Advantageously, as described above, the first process gas flow switch 342 and the second process gas flow switch 360 may reduce the flow rate of the inert gas 20 required by the process chamber 102. For example, the first process gas shut-off trigger 356 may be smaller than the first flow rate rating 336 of the first process gas metering valve 338, and the second process gas shut-off trigger 368 may be smaller than the second flow rate rating 372 of the second process gas metering valve 366. Such sizing allows the flow rate of the inert gas 20 required by the process chamber 102 to be smaller than the flow rate otherwise required by the first flow rate rating 336 and the second flow rate rating 372, due to the aforementioned cooperation with the shut-off valves associated with the process gas flow switches, if the flow rate of either (or both) of the first process gas 14 and / or the second process gas 24 exceeds the shut-off trigger of the flow switch traversed by each of the process gases. The cooperation between the process gas flow switch and the shut-off valve may also enhance the safety of the semiconductor processing system 100 by stopping the flow of both the first process gas 14 and the second process gas 24 into the process chamber 102, for example, if the flow rate of either process gas exceeds the shut-off trigger of the respective flow switch.

[0059] Referring to Figure 5, a semiconductor processing system 100 is shown according to an embodiment that includes a gas system 404. The gas system 404 is similar to the gas system 104 (shown in Figure 1) and additionally includes an inert gas flow switch 442. The inert gas flow switch 442 is connected to an inert gas supply source 110, fluidly connects the inert gas supply source 110 to a vacuum source 112, and is configured to control the flow of process gas 14 to the process chamber 102 according to the flow rate of inert gas 20 crossing the inert gas flow switch 442. In this regard, the inert gas flow switch 442 has an inert gas shut-off trigger 456 and is configured to provide an inert gas shut-off signal 458 to prompt the closing of the shut-off valve 146 when the flow rate of inert gas 20 crossing the inert gas flow switch 442 is less than the inert gas shut-off trigger 456, for example, when the flow rate of inert gas 20 falls below the inert gas shut-off trigger 456. The inert gas shutoff trigger 456 is intended to select the inert gas flow switch 442 to close the shutoff valve 146 when the flow rate of the inert gas 20 is insufficient to deactivate the residual process gas and / or process gas products 16 emitted by the process chamber 102 during the deposition of the film 12 onto the substrate 10.

[0060] During the deposition of the film 12 onto the substrate 10, the inert gas source 110 supplies inert gas 20 to the vacuum source 112, and the process gas source 106 supplies process gas 14 to the process chamber 102 through the shut-off valve 146 and the process gas metering valve 138. The process chamber 102 then flows the process gas 14 over the entire substrate 10 to deposit the film 12 onto the substrate 10, and then discharges the residual process gas and / or process gas product 16 into the foreline 122 and through thereto to the vacuum source 112. The vacuum source 112 introduces the inert gas 20 supplied by the inert gas source 110 into the residual process gas and / or process gas product 16 to form exhaust gas 18. As will be understood by those skilled in the art in relation to this disclosure, the introduction of the inert gas 20 into the residual process gas and / or process gas product 16 limits (or eliminates) the hazards otherwise associated with the residual process gas and / or process gas product 16. As will be understood by those skilled in the art in light of the present disclosure, this ensures that the exhaust gas 18 is safe to flow through the exhaust conduit 124 to the abatement device 134.

[0061] As the inert gas 20 passes through the inert gas flow switch 442, the inert gas flow switch 442 compares the flow rate of the inert gas 20 with the inert gas shut-off trigger 456. If the flow rate of the inert gas 20 is greater than the inert gas shut-off trigger 456, the inert gas flow switch 442 does nothing, the shut-off valve 146 remains open, and the process gas 14 flows to the process chamber 102 through both the shut-off valve 146 and the process gas metering valve 138. If the flow rate of the inert gas 20 is less than the inert gas shut-off trigger 456, for example, if the flow of the inert gas 20 is insufficient to safely pass the residual process gas and / or process gas products 16 to the abatement unit 134, the inert gas flow switch 442 provides an inert gas shut-off signal 458. If the inert gas shut-off signal 458 is present, it causes the shut-off valve 146 to close. Closing the shut-off valve 146 then stops the flow of process gas 14 into the process chamber 102 and the emission of residual process gas and / or process gas products 16 from the process chamber 102. As will be understood by those skilled in the art in relation to the present disclosure, this limits (or eliminates) the hazards potentially associated with residual process gas and / or process gas products 16 while flowing through the vacuum source 112 and / or abatement device 134. As will be understood by those skilled in the art in relation to the present disclosure, the cooperation between the inert gas flow switch 442 and the shut-off valve 146 may further enhance the safety of the semiconductor processing system 100.

[0062] Referring to Figure 6, a semiconductor processing system 100 is shown according to an embodiment that includes a gas system 504. Gas system 504 is similar to gas system 104 (shown in Figure 1) and additionally includes a first inert gas flow switch 542 and a second inert gas flow switch 564. The first inert gas flow switch 542 is connected to an inert gas supply source 110, fluidly connects the inert gas supply source 110 to a vacuum source 112, and is configured to control the flow of process gas 14 to the process chamber 102 according to the flow rate of a first portion of inert gas 20 through the first inert gas flow switch 542 and to the vacuum source 112. The second inert gas flow switch 564 is also connected to an inert gas supply source 110, fluidly connects the inert gas supply source 110 to an exhaust conduit 124, and is configured to control the flow of process gas 14 to the process chamber 102 according to the flow rate of a second portion of inert gas 20 through the second inert gas flow switch 564 and to the exhaust conduit 124.

[0063] The first inert gas flow switch 542 and the second inert gas flow switch 564 are intended to control the flow of process gas 14 to the process chamber 102 using the first inert gas shut-off trigger 556 and the second inert gas shut-off trigger 566. In this regard, the first inert gas flow switch 542 compares the flow rate of the first portion of inert gas 20 to the vacuum source 112 with the first inert gas shut-off trigger 556, and does nothing when the flow rate is greater than the first inert gas shut-off trigger 556, and provides a first inert gas shut-off signal 558 when the flow rate of the first portion of inert gas 20 is less than the first inert gas shut-off trigger 556. In addition, the second inert gas flow switch 564 similarly compares the flow rate of the second portion of the inert gas 20 into the exhaust conduit 124 with the second inert gas shut-off trigger 566, and when the flow rate is greater than the second inert gas shut-off trigger 566, it does nothing, and when the flow rate of the second portion of the inert gas 20 is less than the second inert gas shut-off trigger 566, it provides a second inert gas shut-off signal 568. As a person skilled in the art will understand from the points of this disclosure, the provision of the first inert gas shut-off signal 558 and / or the second inert gas shut-off signal 568 causes the shut-off valve 146 to close. The closing of the shut-off valve 146 then stops the flow of process gas 14 into the process chamber 102, the emission of residual process gas and / or process gas products 16.

[0064] During the deposition of the film 12 onto the substrate 10, the inert gas supply source 110 provides a first and second portion of the inert gas 20 to the vacuum source 112 and the exhaust conduit 124, respectively, and the process gas supply source 106 provides the process gas 14 to the process chamber 102. The process chamber 102 flows the process gas 14 over the entire substrate 10 to deposit the film 12 onto the substrate 10, and then discharges the residual process gas and / or process gas products 16 to the foreline 122. The foreline 122 then flows the residual process gas and / or process gas products 16 to the vacuum source 112, which introduces the first portion of the inert gas 20 into the residual process gas and / or process gas products 16 to form the exhaust gas 18 that the vacuum source 112 provides to the exhaust conduit 124. The exhaust conduit 124 introduces the second portion of the inert gas 20 into the exhaust gas 18, for example, at a union located along the exhaust conduit 124, and then flows the further diluted exhaust gas 18 to the abatement device 134. As those skilled in the art will understand from the standpoint of this disclosure, dividing the inert gas 20 into a first and second portion limits the sizing of the vacuum source 112, while at the same time limiting (or eliminating) the potential hazards associated with the residual process gas and / or process gas products 16 in other ways.

[0065] When the first portion of the inert gas 20 crosses the first inert gas flow switch 542, the first inert gas flow switch 542 compares the flow rate of the first portion of the inert gas 20 with the first inert gas shut-off trigger 556. At the same time, when the second portion of the inert gas 20 crosses the second inert gas flow switch 564, the second inert gas flow switch 564 compares the flow rate of the second portion of the inert gas 20 with the second inert gas shut-off trigger 566. When the flow rates of both the first and second portions of the inert gas 20 are greater than those of the first and second inert gas shut-off triggers 556 and 566, neither the first inert gas flow switch 542 nor the second inert gas flow switch 564 takes any action, the shut-off valve 146 remains open, and the process gas 14 flows into the process chamber 102 through both the shut-off valve 146 and the process gas metering valve 138. When the flow rates of the first and / or second portions of the inert gas 20 are less than the first inert gas shut-off trigger 556 and / or the second inert gas shut-off trigger 566, respectively, the first inert gas shut-off signal 558 and / or the second inert gas shut-off signal 568 are provided by the first inert gas flow switch 542 and / or the second inert gas flow switch 564. Either (or both) of the first inert gas shut-off signal 558 and / or the second inert gas shut-off signal 568, if present, causes the shut-off valve 146 to close. Closing the shut-off valve 146 then stops the flow of process gas 14 to the process chamber 102 and subsequently stops the emission of residual process gas and / or process gas products 16 from the process chamber 102. As described above, this limits (or eliminates) the hazards that could otherwise be potentially presented by the residual process gas and / or process gas products 16 while flowing through the vacuum source 112 and / or exhaust conduit 124, thereby enhancing the safety of the semiconductor processing system 100.

[0066] Referring to Figure 7, a semiconductor processing system 100 is shown according to an embodiment that includes a gas system 604. Gas system 604 is similar to gas system 104 (shown in Figure 1) and additionally includes a process gas flow switch 642 and an inert gas flow switch 664. The process gas flow switch 642 is connected to a process gas source 106 and is configured to fluidly connect an inert gas source 110 to a process chamber 102 through a shut-off valve 146 and a process gas metering valve 138, and to control the flow of process gas 14 to the process chamber 102 according to the flow rate of process gas 14 crossing the process gas flow switch 642. In this regard, the process gas flow switch 642 has a process gas shut-off trigger 656 and is configured to provide a process gas shut-off signal 658 when the flow rate of process gas 14 crossing the process gas flow switch 642 is greater than the process gas shut-off trigger 656. The process gas shut-off signal 658 (if present) causes the shut-off valve 146 to close, stopping the flow of process gas 14 to the process chamber 102. If the flow rate of process gas 14 across the process gas flow switch 642 does not exceed the process gas shut-off trigger 656, the process gas flow switch 642 does not provide a process gas shut-off signal 658, and the process gas 14 may flow into the process chamber 102.

[0067] The inert gas flow switch 664 is connected to the inert gas supply source 110, fluidly connects the inert gas supply source 110 to the vacuum source 112, and is configured to control the flow of process gas 14 to the process chamber 102 according to the flow of inert gas 20 traversing the inert gas flow switch 664. In this regard, the inert gas flow switch 664 compares the flow rate of inert gas 20 with an inert gas shut-off trigger 666 and takes no action when the flow rate of inert gas 20 is greater than the inert gas shut-off trigger 666, and provides an inert gas shut-off signal 668 when the flow rate of inert gas 20 is less than the inert gas shut-off trigger 666. If the inert gas shut-off signal 668 is present, it causes the shut-off valve 146 to close, stopping the flow of process gas 14 to the process chamber 102. As a person skilled in the art will understand from the standpoint of this disclosure, stopping the flow of process gas 14 to the process chamber 102 when the flow rate of inert gas 20 is less than the inert gas shutoff trigger 666 limits (or eliminates) the risk that, if the inert gas supply source 110 is unable to provide a sufficient flow of inert gas 20 to the vacuum source 112 and / or exhaust conduit 124, the residual process gas and / or process gas products 16 may otherwise become associated with each other.

[0068] During the deposition of the film 12 onto the substrate 10, the inert gas supply source 110 provides inert gas 20 to the vacuum source 112 through the inert gas flow switch 664, and the process gas supply source 106 provides process gas 14 to the process chamber 102 through the process gas flow switch 642 and the shut-off valve 146. The process chamber 102 then flows the process gas 14 over the entire substrate 10 to deposit the film 12 onto the substrate 10, and then discharges the residual process gas and / or process gas products 16 to the foreline 122. The foreline 122 flows the residual process gas and / or process gas products 16 to the vacuum source 112, which then introduces inert gas 20 into the residual process gas and / or process gas products 16 to form exhaust gas 18. As a person skilled in the art will understand from the standpoint of this disclosure, the introduction of the inert gas 20 into the residual process gas and / or process gas product 16 limits (or eliminates) any hazards that may otherwise be associated with the residual process gas and / or process gas product 16 before the exhaust gas 18 is discharged into the abatement unit 134.

[0069] As the process gas 14 passes through the process gas flow switch 642, the process gas flow switch 642 compares the flow rate of the process gas 14 with the process gas shut-off trigger 656. When the flow rate of the process gas 14 is greater than the process gas shut-off trigger 656, the process gas flow switch 642 provides a process gas shut-off signal 658, which closes the shut-off valve 146 (if present) and stops the flow of the process gas 14 to the process chamber 102. When the flow rate of the process gas 14 is less than the process gas shut-off trigger 656, the process gas flow switch 642 does nothing, and the flow of the process gas 14 may continue through the shut-off valve 146 and the process gas metering valve 138 to the process chamber 102. The process gas shut-off trigger 656 of the process gas flow switch 642 is smaller than the flow rate rating 136 of the process gas metering valve 138, and the intention is to limit the flow rate of the semiconductor processing system 100 by limiting the flow rate of the inert gas 20 required by the semiconductor processing system 100.

[0070] As the inert gas 20 passes through the inert gas flow switch 664, the inert gas flow switch 664 compares the flow rate of the inert gas 20 with the inert gas shut-off trigger 666. When the flow rate of the inert gas 20 is greater than the inert gas shut-off trigger 666, the inert gas flow switch 664 does nothing, and the flow of process gas 14 through the shut-off valve 146 and the process gas metering valve 138 to the process chamber 102 may continue. When the flow rate of the inert gas 20 is less than the inert gas shut-off trigger 666, for example, if the flow of inert gas 20 from the inert gas supply source 110 is interrupted, the inert gas flow switch 664 provides an inert gas shut-off signal 668. The inert gas shut-off signal 668 (if present) causes the shut-off valve 146 to close, and subsequently stops the flow of process gas 14 to the process chamber 102. As described above, closing the shut-off valve 146 enhances the safety of the semiconductor processing system 100 by stopping the flow of process gas 14 to the process chamber 102, thereby preventing the release of residual process gas and / or process gas products 16 into the foreline 122 and through to the vacuum source 112, when the flow rate of inert gas 20 is insufficient to limit (or eliminate) the risk associated with residual process gas and / or process gas products 16 in other ways. In particular, the cooperation of the process gas flow switch 642 and the inert gas flow switch 664 with the shut-off valve 146 may limit operating costs, limit the ventilation required by the semiconductor processing system 100, limit the flow rate of exhaust gas 18 supplied to the abatement unit 134, and / or enhance the safety of the semiconductor processing system 100 by reducing the amount of inert gas required by the semiconductor processing system.

[0071] Referring to Figure 8, the gas flow control method 700 is shown. As shown in box 710, a gas, for example, process gas 14 (shown in Figure 1) or inert gas 20 (shown in Figure 1), is supplied to a flow switch, for example, flow switch 142 (shown in Figure 2). As shown in box 720, the flow switch compares the gas flow rate with a cut-off trigger of the flow switch, for example, cut-off trigger 156 (shown in Figure 2). When the flow rate is within a predetermined range, as shown in box 730, arrow 732, and box 740, the process gas flows into a process chamber, for example, process chamber 102 (shown in Figure 1). As shown in box 750, the process gas is used to deposit a film onto a substrate supported in the process chamber, for example, film 12 (shown in Figure 1) onto substrate 10 (shown in Figure 1). As shown in box 760, residual process gas and / or process gas products emitted by the process chamber during film deposition on the substrate, e.g., residual process gas and / or process gas product 16 (shown in Figure 1), are then mixed (deactivated) with a flow of inert gas provided by an inert gas source 20 (shown in Figure 1), e.g., an inert gas source 110 (shown in Figure 1). The flow rate of the process gas may be monitored iteratively (or continuously) using a flow switch during film deposition on the substrate, as indicated by arrow 762.

[0072] As indicated by arrows 770 and box 772, when the gas flow rate is not within a predetermined range for the flow of process gas into the process chamber, the flow into the process chamber is stopped. In certain embodiments, a shut-off signal, e.g., shut-off signal 158 (shown in Figure 2), may be provided by a flow switch to stop the flow of process gas into the process chamber, as shown in box 774. According to certain embodiments, as shown in box 780, when the flow rate of process gas is outside a predetermined range, the deposition of the film on the substrate may be stopped. It is also intended that the deposition of the film on the substrate may be achieved by closing a shut-off valve operably associated with a flow switch, e.g., shut-off valve 146 (shown in Figure 2), as shown in box 782.

[0073] Referring to Figure 9, the gas flow control method 800 is shown. As shown in box 810, a process gas, for example, process gas 14 (shown in Figure 1), is supplied to a process gas flow switch, for example, process gas flow switch 242 (shown in Figure 3). As shown in box 820, the process gas flow switch compares the flow rate of the process gas with a cut-off trigger of the process gas flow switch, for example, process gas cut-off trigger 256 (shown in Figure 3). When the flow rate of the process gas is less than the process gas cut-off trigger of the process gas flow switch, the process gas flows into a process chamber, for example, process chamber 102 (shown in Figure 1), as shown, for example, in box 830, arrow 832, and box 840. The process chamber flows the process gas over the entire substrate supported within the process chamber so that a film is deposited on the substrate, for example, film 12 (shown in Figure 1) on the substrate 10 (shown in Figure 1). The residual process gas and / or process gas product, e.g., residual process gas and / or process gas product 16 (shown in Figure 1), is then mixed (e.g., deactivated) with a flow of inert gas provided by an inert gas supply source, e.g., inert gas 20 (shown in Figure 1), provided by an inert gas supply source 110 (shown in Figure 1), as shown in box 860. The flow rate of the process gas into the process chamber may be monitored iteratively (or continuously) during film deposition on the substrate using a process gas flow switch, as shown by arrow 862.

[0074] When the process gas flow rate is greater than the process gas shut-off trigger, the flow of process gas into the process chamber is stopped, as indicated by arrows 870 and box 880. In certain embodiments, a process gas shut-off signal, e.g., process gas shut-off signal 258 (shown in Figure 3), may be provided by the process gas flow switch to stop the flow of process gas into the process chamber. According to certain embodiments, when the flow rate of process gas across the process gas flow switch is greater than (e.g., rises above) the process gas shut-off trigger, as shown in box 890, film deposition on the substrate may be stopped. According to certain embodiments, film deposition on the substrate may also be achieved by closing a shut-off valve, e.g., shut-off valve 146 (shown in Figure 3), which is operably associated with the process gas flow switch.

[0075] Referring to Figure 10, the gas flow control method 900 is shown. As shown in box 910, an inert gas, for example, inert gas 20 (shown in Figure 1), is supplied to an inert gas flow switch, for example, an inert gas flow switch 442 (shown in Figure 5). As shown in box 920, the inert gas flow switch compares the flow rate of the inert gas across the inert gas flow switch with an inert gas shut-off trigger of the inert gas flow switch, for example, an inert gas shut-off trigger 456 (shown in Figure 5). When the flow rate of the inert gas is greater than the inert gas shut-off trigger, as shown in box 930, arrow 932, and box 940, the process gas flows into the process chamber, for example, process gas 14 (shown in Figure 1) flows into process chamber 102 (shown in Figure 1). As shown in box 950, the process gas is used to deposit a film onto a substrate supported in the process chamber, for example, film 12 (shown in Figure 1) is deposited onto substrate 10 (shown in Figure 1). As shown in box 960, residual process gas and / or process gas products emitted by the process chamber during film deposition on the substrate, e.g., residual process gas and / or process gas product 16 (shown in Figure 1), are subsequently mixed (inactivated) with an inert gas. The flow rate of the inert gas may be monitored iteratively (or continuously) using a process gas flow switch as the process gas flows into the process chamber and as the film is deposited on the substrate, as indicated by arrow 962.

[0076] When the inert gas flow rate is less than the inert gas shut-off trigger, the flow of process gas into the process chamber is stopped, as indicated by arrows 970 and box 980. In certain embodiments, a shut-off signal, e.g., an inert gas shut-off signal 458 (shown in Figure 5), may be provided by an inert gas flow switch to stop the flow of process gas into the process chamber. According to certain embodiments, when the inert gas flow rate is less than (e.g., below) the inert gas shut-off trigger, as shown in box 990, the deposition of the film on the substrate may be stopped. It is also intended that the deposition of the film on the substrate may be achieved by closing a shut-off valve operably associated with an inert gas flow switch, e.g., a shut-off valve 146 (shown in Figure 5).

[0077] Referring to Figure 11, the gas flow control method 1000 is shown. As shown in boxes 1010 and 1020, the inert gas is supplied to the inert gas flow switch, for example, inert gas 20 (shown in Figure 1) to the inert gas flow switch 664 (shown in Figure 7), and the process gas is supplied to the process gas flow switch, for example, process gas 14 (shown in Figure 1) to the process gas flow switch 642 (shown in Figure 7). As shown in box 1030, the flow rate of the process gas is compared with the process gas shut-off trigger of the process gas flow switch, for example, the process gas shut-off trigger 656 (shown in Figure 7).

[0078] When the process gas flow rate is less than the process gas shut-off trigger, the inert gas flow rate is compared to the inert gas shut-off trigger of the inert gas flow switch, for example, inert gas shut-off trigger 666 (shown in Figure 7), as shown in box 1040, arrow 1042, and box 1050. When the inert gas flow rate is greater than the inert gas shut-off trigger, the process gas flows into the process chamber, for example, process chamber 102 (shown in Figure 1), and the film is deposited onto the substrate, for example, film 12 (shown in Figure 1) on substrate 10 (shown in Figure 1), as shown in box 1060, arrow 1062, and substrate 1070. Residual process gas and / or process gas products may be deactivated by introducing an inert gas into the residual process gas and / or process gas products emitted by the process chamber, as shown in box 1072. The flow rates of the process gas and inert gas may be monitored iteratively (or continuously) during film deposition on the substrate, as shown by arrow 1074.

[0079] When the process gas flow rate is greater than the process gas shut-off trigger, and / or when the inert gas flow rate is less than the inert gas shut-off trigger, the flow of process gas into the process chamber is stopped, as shown by arrows 1080, 1082, and boxes 1084 and 1086. Stopping the flow of process gas into the process chamber is intended to stop the deposition of the film on the substrate, for example, before the deposition of the film on the substrate is complete, as shown in box 1090.

[0080] Referring to Figure 12, a gas flow control system kit 1100 for a gas system is shown. Kit 1100 includes a shut-off valve configured to control the flow of process gas into a process chamber, for example, shut-off valve 146 (shown in Figure 2), and a flow switch configured for an operable connection to the shut-off valve to close the shut-off valve in accordance with the flow of gas across the flow switch, for example, flow switch 142 (shown in Figure 2). In certain embodiments, kit 1100 may also include a housing configured to house the shut-off valve and flow switch outside the enclosure, for example, housing 154 (shown in Figure 2). According to certain embodiments, kit 1100 may also include a relay and / or controller configured to connect the flow switch to the shut-off valve, for example, relay 160 (shown in Figure 2) and / or controller 162 (shown in Figure 2). It is also intended that the flow switch may be one of a plurality of flow switches configured to control the flow of process gas through the shut-off valve in accordance with the process gas or inert gas across the flow switch.

[0081] While this disclosure has been provided in the context of certain embodiments and examples, those skilled in the art will understand that this disclosure extends beyond the embodiments specifically described to other alternative embodiments and / or uses and obvious modifications of these embodiments and their equivalents. In addition, while several variations of the embodiments of this disclosure are shown and described in detail, other modifications within the scope of this disclosure will be readily apparent to those skilled in the art based on this disclosure. It is also intended that various combinations or partial combinations of certain features and aspects of the embodiments may be made and still be included within the scope of this disclosure. Naturally, the various features and aspects of the disclosed embodiments can be combined or substituted for each other to form changing modes of the embodiments of this disclosure. Therefore, it is intended that the scope of this disclosure should not be limited by the specific embodiments described above.

[0082] Where headings are provided herein, they are for convenience only and do not necessarily affect the scope or meaning of the apparatus and methods disclosed herein. [Explanation of symbols]

[0083] 10 Base material 12 membrane 14 Process gases 16. Residual process gases and / or process gas products 18 Exhaust gas 20 Inert gas 22 External environment 24 Second process gas 28. Ventilated gas 100 Semiconductor Processing Systems 102 Process Chamber 104 Gas System 106 Process gas supply sources 108 Ventilation source 110 Inert gas supply source 112 Vacuum source 114 Process gas supply source conduit 116 Process gas supply conduit 118 Inert gas conduit 120 Ventilation conduit 122 Foreline 124 Exhaust conduit 126 Substrate support 128 Exhaust flange 130 Exhaust Flange 132 Blower or fan 134 Abatement equipment 136 Flow rate rating 138 Process gas metering valve 140 Opening Plate 142 Flow switch 144 Enclosure 146 Shut-off valve 148 MFC 150 MFM 152 Servo-controlled valve 154 Housing 156 Shut-off trigger 158 Blocking signal 160 relays 162 controllers 204 Gas System 242 Process Gas Flow Switch 256 Process gas shutoff trigger 258 Process gas shutoff signal 304 Gas System 306 First process gas supply source 338 First process gas metering valve 342 First process gas flow switch 346 First shut-off valve 356 First process gas shutoff trigger 358 First process gas shutoff signal 360 Second process gas flow switch 362 Second shut-off valve 364 Second process gas supply source 366 Second process gas metering valve 368 Second process gas shutoff trigger 370 Second process gas shutoff signal 404 Gas System 442 Inert Gas Flow Switch 456 Inert Gas Shut-off Trigger 458 Inert gas shutoff signal 504 Gas System 542 First inert gas flow switch 556 First inert gas shutoff trigger 558 First inert gas shutoff signal 564 Second inert gas flow switch 566 Second inert gas shutoff trigger 568 Second inert gas shutoff signal 604 Gas System 642 Process Gas Flow Switch 656 Process gas shutoff trigger 658 Process gas shutoff signal 664 Inert Gas Flow Switch 666 Inert gas shutoff trigger 668 Inert gas shutoff signal 700 Gas flow control method 710 Box 720 boxes 730 boxes 732 Arrow 740 boxes 750 boxes 760 boxes 770 Arrow 772 Boxes 774 Boxes 780 boxes 782 Boxes 800 Gas flow control method 810 Box 820 boxes 830 boxes 832 Arrow 840 boxes 850 boxes 860 Boxes 862 Arrow 870 Arrow 880 boxes

Claims

1. It is a gas system, Enclosure and, A process gas metering valve is placed inside the enclosure and configured to supply process gas to the process chamber of the semiconductor processing system. A shut-off valve connected to the process gas metering valve and configured to fluidly separate the process gas metering valve from the process gas supply source, A gas system comprising: a flow switch operably connected to the shut-off valve, configured to use the shut-off valve to stop the flow of process gas to the process chamber of the semiconductor processing system in accordance with the flow of gas across the flow switch.

2. The gas system according to claim 1, wherein at least one of the shut-off valve and the flow switch is located outside the enclosure.

3. The gas system according to claim 1, wherein the flow switch is fluidly connected to the shut-off valve and the process gas metering valve.

4. The gas system according to claim 1, wherein the flow switch is fluidly separated from the shut-off valve.

5. The gas system according to claim 1, wherein the flow switch has a shut-off trigger, the process gas metering valve has a flow rate rating, and the shut-off trigger of the flow switch is smaller than the flow rate rating of the process gas metering valve.

6. The gas system according to claim 1, further comprising a relay for connecting the flow switch to the shut-off valve.

7. The gas system according to claim 1, further comprising a controller that connects the flow switch to the shut-off valve.

8. The flow switch is a process gas flow switch connected to the shut-off valve, and the gas system is A process gas supply source containing silicon-containing gas connected to the process gas flow switch, The gas system according to claim 1, further comprising: a process chamber connected to the process gas metering valve, wherein the process gas flow switch fluidly connects the process gas supply source to the process chamber.

9. The process gas supply source is a first process gas supply source, the process gas flow switch is a first process gas flow switch, the shut-off valve is a first shut-off valve, and the gas system is The second process gas supply source, A second process gas flow switch connected to the second process gas supply source, The gas system according to claim 8, further comprising: a second shut-off valve connected to the second process gas flow switch and fluidly connecting the second process gas supply source to the process chamber, wherein the second process gas flow switch is operably connected to the second shut-off valve.

10. A foreline connected to the process chamber, A vacuum pump connected to the aforementioned foreline, An inert gas flow switch connected to the vacuum pump, The gas system according to claim 9, further comprising: an inert gas supply source connected to the inert gas flow switch and through which the vacuum pump is fluidly connected, wherein the inert gas flow switch is operably connected to the shut-off valve.

11. The flow switch is an inert gas flow switch, and the gas system is A process gas supply source connected to the shut-off valve, A process chamber connected to the process gas metering valve and through it to the process gas supply source, A vacuum pump connected to the process chamber, The gas system according to claim 1, further comprising an inert gas supply source connected to the inert gas flow switch and through which the vacuum pump is fluidly connected.

12. The gas system according to claim 11, wherein the inert gas flow switch has an inert gas shut-off trigger, and the inert gas flow switch is configured to close the shut-off valve when the flow of inert gas from the inert gas supply source to the vacuum pump is less than the inert gas shut-off trigger.

13. The flow switch is a process gas flow switch, and the gas system is A foreline fluidly connected to the process gas metering valve, A vacuum pump connected to the aforementioned foreline, The gas system according to claim 1, further comprising: an inert gas flow switch fluidly connected to the vacuum pump and through the vacuum pump to the foreline, wherein the inert gas flow switch is operably connected to the shut-off valve.

14. The gas system according to claim 13, wherein the inert gas flow switch has an inert gas shut-off trigger, and the inert gas flow switch is configured to close the shut-off valve when the flow of inert gas across the inert gas flow switch is less than the inert gas shut-off trigger.

15. The inert gas flow switch is the first inert gas flow switch, and the gas system is An exhaust conduit connected to the vacuum pump, The gas system according to claim 13, further comprising: a second inert gas flow switch, which is fluidly connected to the exhaust conduit and through it to the vacuum pump, wherein the second inert gas flow switch is operably connected to the flow switch.

16. A gas system according to claim 1, wherein the flow switch is a process gas flow switch having a process gas shut-off trigger, the process gas metering valve has a flow rate rating, and the process gas shut-off trigger of the process gas flow switch is smaller than the flow rate rating of the process gas metering valve, A process gas supply source connected to the aforementioned process gas flow switch, A process chamber fluidly connected to the flow switch by the process gas metering valve and the shut-off valve, A semiconductor processing system comprising: a substrate support disposed within the process chamber, configured to seat a substrate thereon during film deposition on the substrate using a process gas supplied by the process gas source.

17. A gas flow control method, A gas system including an enclosure, a process gas metering valve located within the enclosure, a shut-off valve connected to the process gas metering valve, and a flow switch operably connected to the shut-off valve, The steps include supplying process gas to the flow switch, The steps include comparing the flow of the process gas with the shut-off trigger of the flow switch, When the flow of the process gas is less than the shut-off trigger of the flow switch, the process gas is flowed through the shut-off valve to the process gas metering valve, and through thereto to the process chamber of the semiconductor processing system. A method comprising the step of stopping the flow of the process gas to the semiconductor processing system through the shut-off valve when the flow of the process gas is greater than the shut-off trigger of the flow switch.

18. The method according to claim 17, wherein the step of flowing the process gas through the shut-off valve further includes depositing a film on a substrate using the process gas, and the step of stopping the flow of the process gas includes stopping the deposition of the film on the substrate.

19. A gas flow control method, A gas system including an enclosure, a process gas metering valve located within the enclosure, a shut-off valve connected to the process gas metering valve, and a flow switch operably connected to the shut-off valve, The steps include providing an inert gas to the flow switch, The steps include comparing the flow of the inert gas with the shut-off trigger of the flow switch, When the flow of the inert gas is greater than the shut-off trigger of the flow switch, the process gas is flowed through the shut-off valve to the process gas metering valve, and through thereto to the process chamber of the semiconductor processing system. A gas flow control method comprising the step of stopping the flow of process gas through the shut-off valve when the flow of the inert gas is less than the shut-off trigger of the flow switch.

20. The flow switch is an inert gas flow switch, and the gas system further comprises a process gas flow switch, and the method is The steps include supplying process gas to the process gas flow switch, The steps include comparing the flow of the process gas with the process gas shutoff trigger of the process gas flow switch, When the flow of the process gas is less than the process gas shut-off trigger of the process gas flow switch, the process gas is flowed through the shut-off valve to the process gas metering valve. The gas flow control method according to claim 19, further comprising the step of stopping the flow of process gas through the shut-off valve when the flow of process gas is greater than the process gas shut-off trigger of the process gas flow switch.

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