Processing method and plasma processing apparatus

Abstract

Efficiently adjusts the temperature of the object being processed during plasma treatment. [Solution] A processing method for performing plasma processing on a substrate, comprising the steps of: placing an object to be temperature-controlled on a mounting surface of a substrate support in a processing container configured to be able to reduce pressure; forming a deformable heat transfer layer for the object to be temperature-controlled on the mounting surface of the substrate support, which is composed of at least one of a liquid layer or a deformable solid layer; and performing plasma processing on the substrate on the mounting surface on which the heat transfer layer has been formed.

Description

Technical Field

[0001] The present disclosure relates to a processing method and a plasma processing apparatus.

Background Art

[0002] Patent Document 1 discloses a substrate processing apparatus including a mounting table having a mounting surface on which a substrate is mounted and provided with a gas supply pipe for supplying a heat transfer gas to a gap between the substrate and the mounting surface.

Prior Art Document

Patent Document

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The technology according to the present disclosure efficiently adjusts the temperature of a temperature adjustment object during plasma processing.

Means for Solving the Problems

[0005] One aspect of the present disclosure is a processing method for performing plasma processing on a substrate, including a step of placing a temperature adjustment object on a mounting surface of a substrate support portion in a processing container configured to be depressurized, a step of forming a heat transfer layer on the mounting surface of the substrate support portion, which is deformable and is composed of at least one of a liquid layer or a deformable solid layer, for the temperature adjustment object, and a step of performing plasma processing on the substrate on the mounting surface on which the heat transfer layer is formed, wherein the forming step includes a step of supplying a source gas serving as a raw material of the heat transfer layer into a processing space in the processing container.

Effects of the Invention

[0006] According to the present disclosure, the temperature of a temperature adjustment object can be efficiently adjusted during plasma processing. [Brief explanation of the drawing]

[0007] [Figure 1] This is a plan view illustrating the configuration of a plasma processing system including a processing module as a plasma processing apparatus according to the first embodiment. [Figure 2] This is a longitudinal cross-sectional view showing a schematic configuration of a processing module as a plasma processing apparatus according to the first embodiment. [Figure 3] This is a flowchart illustrating an example of wafer processing performed using the processing module shown in Figure 2. [Figure 4] This figure shows the state of the processing module in Figure 2 during wafer processing. [Figure 5] This figure shows the state of the processing module in Figure 2 during wafer processing. [Figure 6] This figure shows the state of the processing module in Figure 2 during wafer processing. [Figure 7] This figure shows the state of the processing module in Figure 2 during wafer processing. [Figure 8] This figure shows the state of the processing module in Figure 2 during wafer processing. [Figure 9] This is a diagram illustrating another example of a raw material gas supply method. [Figure 10] This is a diagram illustrating another example of a raw material gas supply method. [Figure 11] This is a diagram illustrating another example of a raw material gas supply method. [Figure 12] This is a diagram illustrating another example of a raw material gas supply method. [Figure 13] This diagram illustrates another example of the conditions inside the processing vessel when forming a heat transfer layer. [Figure 14] This is a longitudinal cross-sectional view showing a schematic configuration of a processing module as a plasma processing apparatus according to the second embodiment. [Figure 15] This is a flowchart illustrating an example of wafer processing performed using the processing module shown in Figure 14. [Figure 16]A diagram showing the state of the processing module of FIG. 14 during wafer processing. [Figure 17] A diagram showing the state of the processing module of FIG. 14 during wafer processing. [Figure 18] A diagram showing the state of the processing module of FIG. 14 during wafer processing. [Figure 19] A diagram showing the state of the processing module of FIG. 14 during wafer processing. [Figure 20] A diagram showing a specific example of a groove. [Figure 21] A diagram showing a specific example of a groove. [Figure 22] A longitudinal sectional view showing an outline of the configuration of a processing module as a plasma processing apparatus according to the third embodiment. [Figure 23] A longitudinal sectional view showing an outline of the configuration of a processing module as a plasma processing apparatus according to the fourth embodiment. [Figure 24] A plan view showing an outline of the configuration of a plasma processing system including a processing module as a plasma processing apparatus according to the fifth embodiment. [Figure 25] A longitudinal sectional view showing an outline of the configuration of a processing module as a plasma processing apparatus according to the fifth embodiment. [Figure 26] A flowchart for explaining an example of wafer processing performed using the processing module of FIG. 25. [Figure 27] A diagram showing the state of the processing module of FIG. 25 during wafer processing. [Figure 28] A diagram showing the state of the processing module of FIG. 25 during wafer processing. [Figure 29] A diagram showing the state of the processing module of FIG. 25 during wafer processing. [Figure 30] A diagram showing the state of the processing module of FIG. 25 during wafer processing. [Figure 31] A longitudinal sectional view showing an outline of the configuration of a processing module as a plasma processing apparatus according to the sixth embodiment. [Figure 32]This is a longitudinal cross-sectional view showing a schematic configuration of a processing module as a plasma processing apparatus according to the sixth embodiment. [Figure 33] This flowchart illustrates an example of wafer processing performed using the processing modules shown in Figures 31 and 32. [Figure 34] Figures 31 and 32 show the state of the processing module during wafer processing. [Figure 35] Figures 31 and 32 show the state of the processing module during wafer processing. [Figure 36] Figures 31 and 32 show the state of the processing module during wafer processing. [Modes for carrying out the invention]

[0008] In the manufacturing process of semiconductor devices, plasma treatments such as etching and film deposition are performed on substrates such as semiconductor wafers (hereinafter referred to as "wafers") using plasma. Plasma treatment is carried out with the substrate placed on a substrate support stand inside a reduced-pressure processing chamber.

[0009] Furthermore, in order to obtain good and uniform plasma processing results in both the central and peripheral parts of the substrate, a ring-shaped member in plan view, i.e., an edge ring, may be placed on the substrate support so as to surround the substrate on the substrate support.

[0010] Incidentally, since the results of plasma treatment depend on the substrate temperature, the temperature of the substrate support is adjusted during plasma treatment, and the substrate temperature is controlled via this substrate support. When using the edge ring described above, the temperature of the edge ring affects the plasma treatment results at the periphery of the substrate, so temperature control of the edge ring is also important. The temperature of the edge ring is also controlled via the substrate support. Furthermore, conventionally, a heat transfer gas such as He gas is supplied between the substrate support and the substrate and edge ring so that the temperature of the substrate and edge ring can be efficiently adjusted via the substrate support.

[0011] However, in cases where the heat input from the plasma to the substrate during plasma processing is large, it may not be possible to adequately adjust the temperature of at least one of the substrate or the edge ring even when using a heat transfer gas as described above.

[0012] Therefore, the technology described herein efficiently controls the temperature of a temperature-controlled object, which is at least one of a substrate or an edge ring, during plasma processing.

[0013] The processing method and plasma processing apparatus according to this embodiment will be described below with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant explanations will be omitted.

[0014] (First Embodiment) <Plasma Treatment System> Figure 1 is a plan view showing a schematic configuration of a plasma processing system including a processing module as a plasma processing apparatus according to the first embodiment.

[0015] The plasma processing system 1 in Figure 1 has an atmospheric section 10 and a depressurization section 11, and these atmospheric section 10 and depressurization section 11 are integrally connected via load lock modules 20 and 21. The atmospheric section 10 includes an atmospheric module that performs a desired processing on a wafer W as a substrate under atmospheric pressure. The depressurization section 11 includes a processing module 60 that performs a desired processing on a wafer W under a depressurized atmosphere (vacuum atmosphere).

[0016] The load lock modules 20 and 21 are provided to connect the loader module 30, which is included in the atmospheric pressure section 10, and the transfer module 50, which is included in the reduced pressure section 11, via gate valves (not shown). The load lock modules 20 and 21 are configured to temporarily hold the wafer W. The load lock modules 20 and 21 are also configured to switch between an atmospheric pressure atmosphere and a reduced pressure atmosphere inside.

[0017] The atmospheric section 10 includes a loader module 30 equipped with a transport mechanism 40 (described later) and a load port 32 on which a hoop (FOUP: Front Opening Unified Pod) 31 is placed. The hoop 31 is capable of storing multiple wafers W. The loader module 30 may also be connected to an orienter module (not shown) for adjusting the horizontal orientation of the wafers W, a buffer module (not shown) for temporarily storing multiple wafers W, and the like.

[0018] The loader module 30 has a rectangular enclosure, and the interior of the enclosure is maintained at atmospheric pressure. Multiple load ports 32, for example, five, are arranged side by side on one side of the longer side of the loader module 30's enclosure. Load lock modules 20 and 21 are arranged side by side on the other side of the longer side of the loader module 30's enclosure.

[0019] Inside the housing of the loader module 30 is a transport mechanism 40 configured to transport wafers W. The transport mechanism 40 includes a transport arm 41 that supports the wafer W during transport, a turntable 42 that rotatably supports the transport arm 41, and a base 43 on which the turntable 42 is mounted. Inside the loader module 30 is a guide rail 44 that extends in the longitudinal direction of the loader module 30. The base 43 is mounted on the guide rail 44, and the transport mechanism 40 is configured to move along the guide rail 44.

[0020] The depressurization unit 11 includes a transfer module 50 for transporting wafers W, and a processing module 60 as a plasma processing apparatus for performing plasma processing on the wafers W transported from the transfer module 50. The interiors of the transfer module 50 and the processing module 60 (specifically, the depressurization transport chamber 51 and the plasma processing chamber 100 described later) are maintained in a depressurized atmosphere. Multiple processing modules 60, for example eight, are provided for each transfer module 50.

[0021] The transfer module 50 includes a reduced-pressure transfer chamber 51 having a polygonal (pentagonal in the illustrated example) housing, and the reduced-pressure transfer chamber 51 is connected to the load lock modules 20 and 21. The transfer module 50 transfers the wafer W loaded into the load lock module 20 to a processing module 60, and then, after the wafer W has undergone the desired plasma processing in the processing module 60, it is discharged to the atmosphere 10 via the load lock module 21.

[0022] The processing module 60 performs plasma processing on the wafer W, such as etching or film deposition. The processing module 60 is connected to the transfer module 50 via a gate valve 61. The configuration of the processing module 60 will be described later.

[0023] Inside the reduced-pressure transport chamber 51 of the transfer module 50, there is a transport mechanism 70 configured to transport wafers W. Similar to the transport mechanism 40 described above, the transport mechanism 70 includes a transport arm 71 that supports the wafer W during transport, a turntable 72 that rotatably supports the transport arm 71, and a base 73 on which the turntable 72 is mounted. In addition, a guide rail 74 extending in the longitudinal direction of the transfer module 50 is provided inside the reduced-pressure transport chamber 51 of the transfer module 50. The base 73 is mounted on the guide rail 74, and the transport mechanism 70 is configured to move along the guide rail 74.

[0024] In the transfer module 50, the transport arm 71 receives the wafer W held in the load lock module 20 and loads it into the processing module 60. The transport arm 71 also receives the wafer held in the processing module 60 and loads it into the load lock module 21.

[0025] Furthermore, the plasma processing system 1 has a control unit 80. In one embodiment, the control unit 80 processes computer-executable instructions causing the plasma processing system 1 to perform various processes described herein. The control unit 80 may be configured to control each of the other elements of the plasma processing system 1 to perform the various processes described herein. In one embodiment, some or all of the control unit 80 may be included in the other elements of the plasma processing system 1. Also in one embodiment, the control unit 80 processes computer-executable instructions causing a processing module 60 to perform various processes described herein. The control unit 80 may be configured to control each of the other elements of the processing module 60 to perform the various processes described herein. In one embodiment, some or all of the control unit 80 may be included in the other elements of the processing module 60. The control unit 80 may include, for example, a computer 90. The computer 90 may include, for example, a processing unit (CPU: Central Processing Unit) 91, a storage unit 92, and a communication interface 93. The processing unit 91 may be configured to perform various control operations based on a program stored in the storage unit 92. The memory unit 92 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 93 may communicate with other elements of the plasma processing system 1 via a communication line such as a LAN (Local Area Network).

[0026] <Wafer processing of plasma processing system 1> Next, we will describe the wafer processing performed using the plasma processing system 1 configured as described above.

[0027] First, the transport mechanism 40 removes the wafer W from the desired hoop 31 and loads it into the load lock module 20. Then the inside of the load lock module 20 is sealed and the pressure is reduced. After that, the inside of the load lock module 20 and the inside of the transfer module 50 are connected.

[0028] Next, the wafer W is held by the transport mechanism 70 and transported from the load lock module 20 to the transfer module 50.

[0029] Next, the gate valve 61 is opened, and the wafer W is transported to the desired processing module 60 by the transport mechanism 70. After that, the gate valve 61 is closed, and the desired processing is performed on the wafer W in the processing module 60. The processing performed on the wafer W in this processing module 60 will be described later.

[0030] Next, the gate valve 61 is opened, and the wafer W is discharged from the processing module 60 by the transport mechanism 70. After that, the gate valve 61 is closed.

[0031] Next, the transport mechanism 70 loads the wafer W into the load lock module 21. Once the wafer W is loaded into the load lock module 21, the inside of the load lock module 21 is sealed and then opened to the atmosphere. Subsequently, the inside of the load lock module 21 and the inside of the loader module 30 are connected.

[0032] Next, the wafer W is held by the transport mechanism 40 and returned to the desired hoop 31 via the load lock module 21 and loader module 30 for storage. This completes the series of wafer processing steps in the plasma processing system 1.

[0033] <Processing Module 60> Next, the processing module 60 will be explained using Figure 2. Figure 2 is a longitudinal cross-sectional view showing a schematic configuration of the processing module 60.

[0034] As shown in Figure 2, the processing module 60 includes a plasma processing chamber 100 as a processing vessel, gas supply units 120 and 130, an RF (Radio Frequency) power supply unit 140, and an exhaust system 150. Furthermore, the processing module 60 includes a wafer support base 101 and an upper electrode 102 as substrate support units.

[0035] The wafer support 101 is positioned in the lower region of the plasma processing space 100s within the plasma processing chamber 100, which is configured to allow for depressurization. The upper electrode 102 is positioned above the wafer support 101. The upper electrode 102 can also function as part of the wall defining the plasma processing space 100s, specifically as part of the ceiling of the plasma processing chamber 100.

[0036] The wafer support base 101 is configured to support the wafer W in the plasma processing space 100s. In one embodiment, the wafer support base 101 includes a lower electrode 103, an electrostatic chuck 104, an insulator 105, and legs 106, and is provided with a lifter 107. The wafer support base 101 also includes a temperature control unit configured to adjust the temperature of the electrostatic chuck 104 (for example, the temperature of the upper surface 1041 of its central part). The temperature control unit includes, for example, a heater, a flow path, or a combination thereof. A temperature-controlled fluid, such as a refrigerant or heat transfer gas, flows through the flow path.

[0037] The lower electrode 103 is made of a conductive material such as aluminum and is fixed to the insulator 105. In one embodiment, a flow path 108 for the temperature-controlled fluid, which constitutes part of the temperature control section, is formed inside the lower electrode 103. The temperature-controlled fluid is supplied to the flow path 108 from a chiller unit (not shown) located outside the plasma processing chamber 100. The temperature-controlled fluid supplied to the flow path 108 is returned to the chiller unit. For example, by circulating low-temperature brine as the temperature-controlled fluid in the flow path 108, the electrostatic chuck 104, the wafer W placed on the electrostatic chuck 104, and the edge ring E can be cooled to a predetermined temperature. Alternatively, for example, by circulating high-temperature brine as the temperature-controlled fluid in the flow path 108, the electrostatic chuck 104, the wafer W placed on the electrostatic chuck 104, and the edge ring E can be heated to a predetermined temperature.

[0038] The electrostatic chuck 104 is a component configured to hold a wafer W by electrostatic force and is provided on the lower electrode 103. In one embodiment, the upper surface of the central part of the electrostatic chuck 104 is higher than the upper surface of the peripheral part. The upper surface 1041 of the central part of the electrostatic chuck 104 becomes the wafer mounting surface on which the wafer W is placed, and the upper surface 1042 of the peripheral part of the electrostatic chuck 104 becomes the ring mounting surface on which the edge ring E is placed. The edge ring E is an annular component in plan view, arranged to surround the wafer W placed on the upper surface 1041 of the central part of the electrostatic chuck 104 and adjacent to the wafer W.

[0039] This electrostatic chuck 104 is an example of a fixing part that secures the wafer W to the upper surface 1041, i.e., the wafer mounting surface, of the central part of the electrostatic chuck 104. An electrode 109 is provided in the central part of the electrostatic chuck 104.

[0040] A DC voltage from a DC power supply (not shown) is applied to the electrode 109. The resulting electrostatic force causes the wafer W to be attracted and held on the upper surface 1041 of the central part of the electrostatic chuck 104. In one embodiment, the electrostatic chuck 104 is configured to also hold the edge ring E by electrostatic force, and is provided with electrodes (not shown) for holding the edge ring E to the wafer support base 101 by electrostatic adsorption. In one embodiment, a gas supply hole (not shown) is formed on the upper surface 1042 of the peripheral edge of the electrostatic chuck 104 to supply a heat transfer gas, such as He gas, to the back surface of the edge ring E placed on the upper surface 1042. The heat transfer gas is supplied from a gas supply unit (not shown) through the gas supply hole. The gas supply unit may include one or more gas sources and one or more pressure controllers. In one embodiment, the gas supply unit is configured to supply, for example, heat transfer gas from a gas source to the gas supply hole via a pressure controller.

[0041] Furthermore, the central part of the electrostatic chuck 104 is formed to have a smaller diameter than the diameter of the wafer W, so that when the wafer W is placed on the upper surface (hereinafter referred to as the wafer mounting surface) 1041 of the central part of the electrostatic chuck 104, the peripheral edge of the wafer W protrudes from the central part of the electrostatic chuck 104. The edge ring E has, for example, a step formed on its upper surface, with the upper surface of the outer periphery higher than the upper surface of the inner periphery. The inner periphery of the edge ring E is formed to fit underneath the peripheral edge of the wafer W that protrudes from the center of the electrostatic chuck 104.

[0042] The electrostatic chuck 104 may be equipped with a heater (specifically, a resistance heating element) that constitutes part of a temperature control mechanism. By energizing the heater, the electrostatic chuck 104 and the wafer W placed on the electrostatic chuck 104 can be heated to a predetermined temperature. In this case, the electrostatic chuck 104 has a configuration in which, for example, an electrode 109 for wafer adsorption and an electrode for edge ring adsorption are sandwiched between insulating materials made of insulating material, and a heater is embedded in them. The central part of the electrostatic chuck 104, which is provided with the electrode 109 for wafer adsorption, and the peripheral part of the electrostatic chuck 104, which is provided with the electrode for edge ring adsorption, may be formed integrally or as separate parts.

[0043] The insulator 105 is a disc-shaped member made of ceramic or the like, to which the lower electrode 103 is fixed. The insulator 105 is formed to have the same diameter as the lower electrode 103, for example.

[0044] The legs 106 are cylindrical members made of ceramic or the like, and support the electrostatic chuck 104 via the lower electrode 103 and the insulator 105. The legs 106 are formed to have an outer diameter equivalent to, for example, the outer diameter of the insulator 105, and support the peripheral edge of the insulator 105.

[0045] The lifter 107 is a lifting member that moves up and down relative to the wafer mounting surface 1041 of the electrostatic chuck 104, and is formed, for example, in a columnar shape. When the lifter 107 is raised, its upper end protrudes from the wafer mounting surface 1041, making it possible to support the wafer W. The lifter 107 allows the wafer W to be transferred between the electrostatic chuck 104 and the transport arm 71 of the transport mechanism 70. Furthermore, three or more lifters 107 are provided, spaced apart from each other, and are arranged to extend in the vertical direction.

[0046] Each lifter 107 is connected to a support member 110 that supports the lifter 107. The support member 110 is connected to a drive unit 111 that generates a driving force to raise and lower the support member 110 and raise and lower the multiple lifters 107. The drive unit 111 has, for example, a motor (not shown) as a drive source to generate the driving force.

[0047] The lifter 107 is inserted through a through hole 112, the upper end of which opens into the wafer mounting surface 1041 of the electrostatic chuck 104. The through hole 112 is formed to penetrate, for example, the central part of the electrostatic chuck 104, the lower electrode 103, and the insulator 105. The lifter 107, support member 110, and drive unit 111 constitute a lifting mechanism that raises and lowers the wafer W relative to the wafer mounting surface 1041.

[0048] The aforementioned upper electrode 102 also functions as a showerhead that supplies various gases from the gas supply units 120 and 130 to the plasma processing space 100s. In one embodiment, the upper electrode 102 has a gas inlet 102a, a gas diffusion chamber 102b, and a plurality of gas inlets 102c. The gas inlet 102a is in fluid communication with, for example, the gas supply units 120 and 130 and the gas diffusion chamber 102b. The plurality of gas inlets 102c are in fluid communication with the gas diffusion chamber 102b and the plasma processing space 100s. In one embodiment, the upper electrode 102 is configured to supply various gases from the gas inlet 102a to the plasma processing space 100s via the gas diffusion chamber 102b and the plurality of gas inlets 102c.

[0049] The gas supply unit 120 may include one or more gas sources 121 and one or more flow controllers 122. In one embodiment, the gas supply unit 120 is configured to supply, for example, one or more processing gases (including a gas for removing the heat transfer layer D described later) from the corresponding gas sources 121 to the gas inlet 102a via the corresponding flow controllers 122. Each flow controller 122 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 120 may include one or more flow modulation devices that modulate or pulse the flow rate of one or more processing gases.

[0050] The gas supply unit 130 may include one or more gas sources 131 and one or more flow controllers 132. In one embodiment, the gas supply unit 130 is configured to supply, for example, one or more gases containing raw material gases that will be used as raw materials for the heat transfer layer D described later, from the corresponding gas sources 131 to the gas inlet 102a via the corresponding flow controllers 132. Each flow controller 132 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 130 may include one or more flow modulation devices that modulate or pulse the flow rate of the gas for forming the heat transfer layer. From the gas supply unit 130, which contains the raw material gas, a liquid heat transfer layer D is formed, for example, on the wafer mounting surface 1041 of the wafer support base 101. Therefore, the gas supply unit 130 can function as at least part of a heat transfer layer forming unit configured to form a heat transfer layer D on the wafer mounting surface 1041.

[0051] The RF power supply unit 140 is configured to supply RF power, for example, one or more RF signals, to one or more electrodes, such as the lower electrode 103, the upper electrode 102, or both the lower electrode 103 and the upper electrode 102. This generates plasma from one or more processing gases supplied to the plasma processing space 100s. Therefore, the RF power supply unit 140 can function as at least part of a plasma generation unit configured to generate plasma from one or more processing gases in the plasma processing chamber 100.

[0052] Furthermore, the RF power supply unit 140 may supply RF power as described above, thereby generating plasma from one or more heat transfer layer forming gases supplied to the plasma processing space 100s. Therefore, the RF power supply unit 140 can function as at least part of another plasma generation unit configured to generate plasma from a gas containing one or more source gases in the plasma processing chamber 100.

[0053] The RF power supply unit 140 includes, for example, two RF generation units 141a, 141b and two matching circuits 142a, 142b. In one embodiment, the RF power supply unit 140 is configured to supply a first RF signal from the first RF generation unit 141a to the lower electrode 103 via the first matching circuit 142a. For example, the first RF signal may have a frequency in the range of 27 MHz to 100 MHz.

[0054] In one embodiment, the RF power supply unit 140 is configured to supply a second RF signal from the second RF generation unit 141b to the lower electrode 103 via the second matching circuit 142b. For example, the second RF signal may have a frequency in the range of 400 kHz to 13.56 MHz. A voltage pulse other than RF may be supplied instead of the second RF signal. The voltage pulse may be a negative polarity DC voltage. In other examples, the voltage pulse may be a triangular wave or an impulse.

[0055] Furthermore, although not shown in the figures, other embodiments are possible in this disclosure. For example, in an alternative embodiment, the RF power supply unit 140 may be configured to supply a first RF signal from an RF generation unit to the lower electrode 103, a second RF signal from another RF generation unit to the lower electrode 103, and a third RF signal from yet another RF generation unit to the lower electrode 103. In addition, in another alternative embodiment, a DC voltage may be applied to the upper electrode 102.

[0056] Furthermore, in various embodiments, the amplitude of one or more RF signals (i.e., a first RF signal, a second RF signal, etc.) may be pulsed or modulated. Amplitude modulation may include pulsing the RF signal amplitude between an ON state and an OFF state, or between two or more different ON states.

[0057] The exhaust system 150 may be connected to, for example, an exhaust port 100e located at the bottom of the plasma processing chamber 100. The exhaust system 150 may include a pressure valve and a vacuum pump. The vacuum pump may include a turbomolecular pump, a roughing pump, or a combination thereof.

[0058] <Wafer processing of processing module 60> Next, an example of wafer processing performed using the processing module 60 will be explained with reference to Figures 3 to 8. Figure 3 is a flowchart illustrating the example of wafer processing described above. Figures 4 to 8 show the state of the processing module 60 during the wafer processing. The following processing is performed under the control of the control unit 80.

[0059] For example, first, as shown in Figure 3, a heat transfer layer D is formed on the wafer mounting surface 1041 of the wafer support base 101 (step S1).

[0060] More specifically, first, as shown in Figure 4, gas containing the raw material gas for the liquid heat transfer layer D is supplied from the gas supply unit 130 via the upper electrode 102 into the plasma processing chamber 100, which has been reduced to a predetermined vacuum level by the exhaust system 150.

[0061] In this embodiment, the liquid constituting the heat transfer layer D has a low vapor pressure and a low melting point in order to maintain its liquid state even under low pressure and low temperature. Furthermore, as will be described later, in this embodiment, the wafer W is placed on the wafer mounting surface 1041 via the heat transfer layer D, so the liquid constituting the heat transfer layer D has a high surface tension to prevent it from flowing onto the surface, i.e., the top surface, of the wafer W when it is placed. The liquid constituting the heat transfer layer D may be an ionic liquid. Note that "liquid" also includes sols and gels that use a liquid as a dispersion medium.

[0062] The raw material gas for the heat transfer layer D includes, for example, at least one of B (boron) or C (carbon), which are constituent atoms of the heat transfer layer D, and at least one of H (hydrogen), N (nitrogen), or O (oxygen), which constitute the gas components. Furthermore, it is preferable that the raw material gas for the heat transfer layer D consists of components that do not interfere with the plasma treatment.

[0063] As described above, a gas containing the raw material gas is supplied, and high-frequency power HF for plasma generation is supplied from the RF power supply unit 140 to the lower electrode 103. This excites the raw material gas and generates plasma P1. Then, due to the action of the generated plasma P1, a liquid heat transfer layer D is formed on the wafer mounting surface 1041, etc. After the formation of the heat transfer layer D, the supply of high-frequency power HF from the RF power supply unit 140 and the supply of gas containing the raw material gas from the gas supply unit 130 are stopped.

[0064] Next, as shown in Figure 5, the wafer W is placed on the wafer mounting surface 1041 of the wafer support base 101 (step S2). Specifically, the wafer W is transported into the plasma processing chamber 100 by the transport mechanism 70, and placed on the wafer mounting surface 1041 of the electrostatic chuck 104 via a liquid heat transfer layer D by the raising and lowering of the lifter 107. Subsequently, the inside of the plasma processing chamber 100 is depressurized to a predetermined vacuum level by the exhaust system 150.

[0065] Next, the heat transfer layer D formed in the part of the plasma processing chamber 100 other than the wafer mounting surface 1041 is removed (step S3).

[0066] Specifically, as shown in Figure 6, a removal gas for removing the heat transfer layer D is supplied from the gas supply unit 120 to the plasma processing space 100s via the upper electrode 102, and high-frequency power HF for plasma generation is supplied from the RF power supply unit 140 to the lower electrode 103. This excites the removal gas and generates plasma P2. The generated plasma P2 then removes the heat transfer layer D formed on parts other than the wafer mounting surface 1041 (for example, the upper and outer surfaces of the edge ring E, and the inner wall surfaces of the plasma processing chamber 100 such as the lower surface of the upper electrode 102). Note that the heat transfer layer D formed on the wafer mounting surface 1041 is covered by the wafer W and is not exposed to plasma P2, so it is not removed. After the removal of the heat transfer layer D, the supply of high-frequency power HF from the RF power supply unit 140 and the supply of removal gas from the gas supply unit 120 are stopped.

[0067] Then, plasma processing such as etching or film deposition is performed on the wafer W on the wafer mounting surface 1041 on which the heat transfer layer D is formed (step S4).

[0068] Specifically, as shown in Figure 7, a processing gas is supplied from the gas supply unit 120 to the plasma processing space 100s via the upper electrode 102, and high-frequency power HF for plasma generation is supplied from the RF power supply unit 140 to the lower electrode 103. This excites the processing gas and generates plasma P3. At this time, high-frequency power LF for ion pulling may also be supplied from the RF power supply unit 140. Then, the generated plasma P3 acts on the wafer W to perform plasma processing.

[0069] During plasma processing, the wafer mounting surface 1041 is adjusted to a predetermined temperature by a temperature-controlled fluid flowing through the channel 108 to control the temperature of the wafer W. Furthermore, during plasma processing, the wafer W is placed on the wafer mounting surface 1041 via a liquid heat transfer layer D, and since the heat transfer layer D is composed of a deformable liquid, the lower surface, or back surface, of the wafer W is in close contact with the heat transfer layer D. Since the heat transfer layer D is a liquid, it has higher thermal conductivity than a heat transfer gas such as He. Therefore, when using a liquid heat transfer layer D, the temperature of the wafer W can be adjusted more efficiently via the wafer mounting surface 1041 compared to the conventional method of flowing a heat transfer gas such as He between the wafer mounting surface 1041 and the back surface of the wafer W. Specifically, even if there is a large amount of heat input from the plasma P3 to the wafer W during plasma processing, the temperature of the wafer W can be maintained at a constant level via the temperature control of the wafer mounting surface 1041. Furthermore, if the set temperature of the wafer W is changed during plasma processing, the temperature of the wafer W can be immediately adjusted to the changed set temperature via the temperature control of the wafer mounting surface 1041.

[0070] During plasma processing, the wafer W may be held, or fixed, to the wafer support base 101 (specifically, the wafer mounting surface 1041) in order to bring the heat transfer layer D and the lower surface of the wafer W into closer contact. For example, the wafer W may be held by electrostatic force from the electrostatic chuck 104. More specifically, a DC voltage may be applied to the electrode 109 of the electrostatic chuck 104 so that the wafer W is electrostatically attracted to the electrostatic chuck 104 by electrostatic force. By being held in the manner described above, the temperature of the wafer W can be adjusted more efficiently. Furthermore, during the removal of the heat transfer layer D in step S3, the wafer W may be held on the wafer support stand 101 by electrostatic force or the like. Furthermore, if the wafer W is held on the wafer support base 101 by electrostatic force, the degree of contact between the wafer W and the wafer support base 101 may be controlled by electrostatic force, thereby controlling the heat dissipation from the wafer W by the wafer support base 101.

[0071] Similarly, during plasma processing, the edge ring E may be held, or fixed, to the wafer support 101. For example, a DC voltage may be applied to an electrode (not shown) for edge ring adsorption provided on the electrostatic chuck 104 so that the edge ring E is electrostatically attracted to the electrostatic chuck 104 by electrostatic force. Furthermore, during plasma processing, heat transfer gas may be supplied to the back surface of the edge ring E from a gas supply hole (not shown) formed on the upper surface 1042 of the peripheral edge of the electrostatic chuck 104.

[0072] The removal of the heat transfer layer D in step S3 and the plasma treatment in step S4 may be performed simultaneously. Furthermore, even when the plasma treatment is for film deposition, the removal of the heat transfer layer D in step S3 and the plasma treatment in step S4 can be performed simultaneously by appropriately selecting the type of gas introduced into the plasma treatment space 100s.

[0073] When the plasma processing is completed, the supply of high-frequency power HF from the RF power supply unit 140 and the supply of processing gas from the gas supply unit 130 are stopped. If high-frequency power LF was being supplied during the plasma processing, the supply of said high-frequency power LF is also stopped. In addition, if the wafer W was being held by the electrostatic chuck 104 during the plasma processing, that holding is also stopped. Furthermore, if the edge ring E was being held by the electrostatic chuck 104 and heat transfer gas was being supplied to the back surface of the edge ring E during the plasma processing, at least one of these may be stopped.

[0074] After plasma treatment, the wafer W is separated from the wafer mounting surface 1041 and removed (step S5). Specifically, the wafer W is lifted by the lifter 107 and separated from the heat transfer layer D on the wafer mounting surface 1041. Subsequently, the wafer W is transferred from the lifter 107 to the transport mechanism 70, which then removes it from the plasma processing chamber 100.

[0075] Then, the heat transfer layer D is removed from the wafer mounting surface 1041 (step S6).

[0076] Specifically, as shown in Figure 8, a removal gas for removing the heat transfer layer D is supplied from the gas supply unit 120 to the plasma processing space 100s via the upper electrode 102, and high-frequency power HF for plasma generation is supplied from the RF power supply unit 140 to the lower electrode 103. This excites the removal gas and generates plasma P2. The generated plasma P2 then removes the heat transfer layer D from the wafer mounting surface 1041. After the removal of the heat transfer layer D, the supply of high-frequency power HF from the RF power supply unit 140 and the supply of removal gas from the gas supply unit 120 are stopped. This completes the series of wafer processing steps.

[0077] Furthermore, the removal of the heat transfer layer D from the wafer mounting surface 1041 in step S6 does not need to be performed for each wafer W. In other words, the heat transfer layer D on the wafer mounting surface 1041 may be shared among multiple wafers W. When removing the heat transfer layer D from the wafer mounting surface 1041, the edge ring E may be held, or fixed, to the wafer support base 101. For example, a DC voltage may be applied to an electrode (not shown) for edge ring adsorption provided on the electrostatic chuck 104, so that the edge ring E is electrostatically attracted to the electrostatic chuck 104 by electrostatic force. Furthermore, when removing the heat transfer layer D from the wafer mounting surface 1041, heat transfer gas may be supplied towards the back surface of the edge ring E from a gas supply hole (not shown) formed on the upper surface 1042 of the peripheral edge of the electrostatic chuck 104.

[0078] <Other examples of heat transfer layer D> In the above example, the heat transfer layer D was a liquid layer, but the heat transfer layer D may be a solid layer as long as it is deformable. Here, "deformable" means, for example, that it is deformable by the weight of the wafer W. Also, when the wafer W is electrostatically attracted by the electrostatic chuck 104, "deformable" may mean that it is deformable when an electrostatic attraction force is applied to the wafer W. Furthermore, the heat transfer layer D may be a combination of a liquid layer and a solid layer, provided that it is deformable.

[0079] In other words, the heat transfer layer D is a deformable layer composed of at least one of a liquid layer or a solid layer. The uppermost layer of the heat transfer layer D, which is in contact with the back surface of the wafer W, may be composed of a liquid layer, a solid layer, or a combination thereof and be deformable, while the other parts may be solid layers that do not deform.

[0080] The solid constituting the heat transfer layer D may, for example, have an elastic modulus that allows it to deform under the weight of the wafer W, and may also have an elastic modulus that allows it to deform when an electrostatic adsorption force acts on the wafer W. More specifically, the solid constituting the heat transfer layer D may be, for example, an elastic polymer, i.e., an elastomer.

[0081] <Effects, etc.> As described above, in this embodiment, a deformable heat transfer layer D, composed of at least one of a liquid layer or a solid layer, is formed on the wafer mounting surface 1041 of the wafer support base 101, and plasma processing is performed on the wafer W on the wafer mounting surface 1041 on which the heat transfer layer D is formed. Since the heat transfer layer D is composed of at least one of a liquid layer or a solid layer, it has a higher thermal conductivity than a heat transfer layer made of a heat transfer gas, i.e., a gas. Furthermore, since the heat transfer layer D is deformable, it can be in close contact with the lower surface of the wafer W. Therefore, according to this embodiment, heat can be efficiently exchanged between the wafer W and the wafer mounting surface 1041 via the heat transfer layer D. Thus, the temperature of the wafer W can be efficiently adjusted via the wafer mounting surface 1041 during plasma processing. Specifically, during plasma processing, the wafer mounting surface 1041 can efficiently absorb heat from the wafer W via the heat transfer layer D, and the wafer mounting surface 1041 can efficiently heat the wafer W via the heat transfer layer D.

[0082] Furthermore, according to this embodiment, as described above, efficient heat exchange is possible between the wafer W and the wafer mounting surface 1041 via the heat transfer layer D. Therefore, even if there is a temperature difference between the two immediately after the wafer W is placed on the wafer mounting surface 1041, that temperature difference can be eliminated at high speed.

[0083] Furthermore, in this embodiment, as described above, the wafer W may be held by electrostatic force from the electrostatic chuck 104 on the wafer mounting surface 1041 during plasma processing, etc. This allows for closer contact between the heat transfer layer D and the lower surface of the wafer W, thereby further improving the heat dissipation efficiency from the wafer W or the heating efficiency of the wafer W via the wafer mounting surface 1041 and the heat transfer layer D. Moreover, as described above, the heat transfer layer D and the lower surface of the wafer W can be held in close contact by the electrostatic chuck 104 even if the wafer W is warped. Therefore, even if the wafer W is warped, heat dissipation from the wafer W or heating of the wafer W can be performed efficiently.

[0084] <Modified form of forming the heat transfer layer D from the raw material gas> In the above examples, a heat transfer layer D was formed from the source gas using plasma, but the form of forming the heat transfer layer D from the source gas is not limited to this.

[0085] For example, the portion to which the heat transfer layer D is to be formed may be cooled, and at least one of the liquefaction or solidification (i.e., condensation or agglomeration) of the raw material gas may be performed by the cooled portion to form the heat transfer layer D. Specifically, the heat transfer layer D may be formed on the wafer mounting surface 1041 by using a raw material gas that liquefies or solidifies in a vacuum at a predetermined temperature or below, and cooling the wafer mounting surface 1041 to a predetermined temperature or below. More specifically, the heat transfer layer D may be formed selectively only on the wafer mounting surface 1041 by using a raw material gas that liquefies or solidifies at a temperature lower than the set temperature of the plasma processing chamber 100, and cooling the temperature of the wafer mounting surface 1041 to a temperature at which at least one of the liquefaction or solidification occurs. This makes it possible to selectively form the heat transfer layer D only on the wafer mounting surface 1041 without forming it on the edge ring E, etc. As a result, the step of removing the heat transfer layer D formed on areas other than the wafer mounting surface 1041 in step S3 described above can be omitted, and throughput can be improved.

[0086] Alternatively, after supplying the raw material gas to the plasma processing space 100s within the plasma processing chamber 100, the pressure in the plasma processing space 100s may be increased to liquefy or solidify the raw material gas, thereby forming a heat transfer layer D.

[0087] Furthermore, by irradiating the raw material gas in the plasma processing space 100s with light, at least one of the following may be performed: liquefaction or solidification of the raw material gas to form a heat transfer layer D. In this case, the light source is, for example, located outside the plasma processing chamber 100, and irradiates the raw material gas in the plasma processing space 100s with light through an optical window (not shown) provided in the plasma processing chamber 100.

[0088] When forming a heat transfer layer D from a raw material gas in a plasma processing space 100s using plasma or light, and the wafer mounting surface 1041 and the edge ring E or the inner wall surface of the plasma processing chamber 100 are made of different materials, the following raw material gas may be used. That is, the raw material gas may be one in which the substance generated from the raw material gas by plasma or light and constituting the heat transfer layer D is not adsorbed on the edge ring E or the inner wall surface of the plasma processing chamber 100, but is selectively adsorbed only on the wafer mounting surface 1041. This also allows the heat transfer layer D to be selectively formed only on the wafer mounting surface 1041, thus eliminating the step of removing the heat transfer layer D formed on surfaces other than the wafer mounting surface 1041 in step S3 described above.

[0089] Alternatively, a solid layer may be formed on the wafer mounting surface 1041 using plasma or light from a raw material gas. Then, the wafer W placed on the wafer mounting surface 1041 may be electrostatically attracted by the electrostatic chuck 104, thereby pressurizing and liquefying the solid layer with the wafer W to form a liquid heat transfer layer D.

[0090] <Example of the state of the heat transfer layer D on the wafer mounting surface 1041> The heat transfer layer D is formed over the entire wafer mounting surface 1041, including the central and peripheral regions of the wafer mounting surface 1041, but the heat transfer layer D may be formed only in a portion of the wafer mounting surface 1041. For example, if the central part of the wafer W needs to absorb or heat more heat, the heat transfer layer D may be formed only in the central region of the wafer mounting surface 1041 facing the central part of the wafer W. Alternatively, if the peripheral part of the wafer W needs to absorb or heat more heat, the heat transfer layer D may be formed only in the peripheral region of the wafer mounting surface 1041 facing the peripheral part of the wafer W.

[0091] A method for forming a heat transfer layer D on only a portion of the wafer mounting surface 1041 is as follows: By using a raw material gas that liquefies or solidifies in a vacuum at a predetermined temperature or below, and cooling only the target portion of the wafer mounting surface 1041 to a predetermined temperature or below, a heat transfer layer D can be formed only on the target portion of the wafer mounting surface 1041.

[0092] Furthermore, the heat transfer layer D has a uniform thickness over the entire wafer mounting surface 1041, including the central and peripheral regions of the wafer mounting surface 1041, but its thickness may vary within the plane of the wafer mounting surface 1041. For example, if the central part of the wafer W needs to absorb or heat more heat, the heat transfer layer D may be made thinner in the central region of the wafer mounting surface 1041 facing the central part of the wafer W compared to the peripheral region. Also, if the peripheral part of the wafer W needs to absorb or heat more heat, the heat transfer layer D may be made thinner in the peripheral region of the wafer mounting surface 1041 facing the peripheral part of the wafer W compared to the central region. In this way, by making the heat transfer layer D thinner in only a part of the wafer mounting surface 1041, such as the central region, the heat exchange efficiency between the wafer mounting surface 1041 and the wafer W can be made to vary within the plane, and for example, the heat exchange efficiency can be made higher in only a part of the wafer mounting surface 1041, such as the central region.

[0093] One method for varying the thickness of the heat transfer layer D within the wafer mounting surface 1041 is as follows: By making the temperature of one area of ​​the wafer mounting surface 1041 different from the temperature of other areas when forming the heat transfer layer D, the thickness of the heat transfer layer D can be varied within the wafer mounting surface 1041.

[0094] <Variations in the supply method of raw material gas> Figures 9 to 12 illustrate modified configurations of the raw material gas supply. Note that Figure 10 shows a cross-section of a part of the wafer support that differs from Figure 4, etc. In the above example, the raw material gas was supplied to the plasma processing space 100s via the upper electrode 102, which is also used for supplying the processing gas. However, it may also be supplied via a wall that constitutes the plasma processing space 100s, which is different from the upper electrode 102 of the plasma processing chamber 100. For example, as shown in Figure 9, a gas inlet 200 that is in fluid communication with the plasma processing space 100s and is fluidly connected to the gas supply unit 130A may be provided on the side wall of the plasma processing chamber 100A, and the raw material gas from the gas supply unit 130A may be supplied to the plasma processing space 100s via this side wall (specifically, the gas inlet 200). Alternatively, a gas outlet separate from the gas inlet 102c used for supplying the processing gas may be provided on the upper electrode 102, and the raw material gas from the gas supply unit may be supplied to the plasma processing space 100s via this separate gas outlet.

[0095] The raw material gas may be supplied to the plasma processing space 100s via a wafer support. For example, as shown in Figure 10, a flow channel 210 may be provided on the wafer support base 101B, with one end opening on the wafer mounting surface 104B1 and the other end being fluidly connected to the gas supply unit 130B, and the raw material gas from the gas supply unit 130B may be supplied to the plasma processing space 100s via the flow channel 210. The flow channel 210 may be formed to span, for example, the electrostatic chuck 104B, the lower electrode 103B, and the insulator 105B. Alternatively, as shown in Figure 11, for example, a gas outlet 220 may be provided on the lifter 107C that is in fluid communication with the plasma processing space 100s and is fluidly connected to a gas supply unit (not shown), and the raw material gas from the gas supply unit (not shown) may be supplied to the plasma processing space 100s via the gas outlet 220.

[0096] Furthermore, the supply of raw material gas to the plasma processing space 100s may be carried out via a transport mechanism that transports the wafer W to the processing module 60. For example, as shown in Figure 12, a nozzle 75 is provided on the transport arm 71D of the transport mechanism 70D, which is fluidly connected to a gas supply unit (not shown). With the transport arm 71D inserted into the plasma processing chamber 100, the raw material gas from the gas supply unit (not shown) may be supplied to the plasma processing space 100s via the nozzle 75.

[0097] Furthermore, multiple types of raw material gases may be used, and each raw material gas may be supplied to the plasma processing space 100s from different locations, so that the heat transfer layer D is formed by the reaction of multiple types of reaction gases with each other. For example, one raw material gas may be supplied through the gas inlet 102c, and another raw material gas may be supplied through the gas inlet 200 (see Figure 9), so that the heat transfer layer D is formed by the reaction of the first raw material gas and the other raw material gases within the plasma processing space 100s.

[0098] (Modified example in which the heat transfer layer D formed on a surface other than the wafer mounting surface is removed) In the above example, plasma was used to remove the heat transfer layer D formed on a surface other than the wafer mounting surface, but the form of such removal is not limited to this.

[0099] For example, a portion other than the wafer mounting surface on which the heat transfer layer D is formed (e.g., the inner wall surface of the plasma processing chamber 100) may be heated to vaporize and selectively remove the heat transfer layer D formed in that portion. Alternatively, the heat transfer layer D formed on a portion other than the wafer mounting surface may be vaporized and selectively removed by irradiating it with light. In this case, the light source is, for example, located outside the plasma processing chamber 100, and the light is irradiated through an optical window provided in the plasma processing chamber 100 to the heat transfer layer D formed on a portion other than the wafer mounting surface inside the plasma processing chamber 100. Furthermore, the plasma processing chamber 100 may be evacuated while the wafer W is placed on the wafer mounting surface to vaporize and remove the heat transfer layer D formed on parts other than the wafer mounting surface. Specifically, the plasma processing chamber 100 may be evacuated to a low pressure (for example, below the vapor pressure) while the wafer W is placed on the wafer mounting surface, thereby exposing the heat transfer layer D formed on parts other than the wafer mounting surface to a reduced pressure atmosphere, and thus vaporizing and removing it. In this case, the wafer W may be fixed to the wafer mounting surface to suppress the vaporization of the heat transfer layer D formed on the wafer mounting surface. For example, a DC voltage may be applied to the electrode 109 of the electrostatic chuck 104 so that the wafer W is electrostatically attracted to the electrostatic chuck 104 by electrostatic force. Furthermore, when removing the heat transfer layer D formed on parts other than the wafer mounting surface using heat or light, it is not necessary to keep the wafer W on the wafer mounting surface. In this case, the wafer mounting surface may be cooled. This suppresses the vaporization of the heat transfer layer D formed on the wafer mounting surface.

[0100] (Modified example of a configuration in which the heat transfer layer D formed on the wafer mounting surface is removed) In the above example, plasma was used to remove the heat transfer layer D formed on the wafer mounting surface, but the method of removal is not limited to this.

[0101] For example, the heat transfer layer D formed on the wafer mounting surface may be vaporized and removed by raising the temperature of the wafer mounting surface. Alternatively, the heat transfer layer D formed on the wafer mounting surface may be removed by irradiating it with light. In this case, the light source is, for example, located outside the plasma processing chamber 100, and the light is irradiated onto the heat transfer layer D formed on the wafer mounting surface through an optical window provided in the plasma processing chamber 100. Furthermore, the plasma processing chamber 100 may be evacuated to vaporize and remove the heat transfer layer D formed on the wafer mounting surface. Specifically, the plasma processing chamber 100 may be evacuated to a low pressure (for example, below the vapor pressure) to expose the heat transfer layer D formed on the wafer mounting surface to a reduced pressure atmosphere, thereby vaporizing and removing it.

[0102] Furthermore, if the heat transfer layer D is not detached from the wafer W due to being composed solely of solid material, the following may be used. That is, the heat transfer layer D may be fixed to the lower surface of the wafer W by its adhesive force, and after plasma processing, the wafer W with the heat transfer layer D fixed to it may be raised to separate it from the wafer mounting surface and removed from the plasma processing chamber 100. This also allows for the removal of the heat transfer layer D formed on the wafer mounting surface. In this case, the heat transfer layer D on the lower surface of the wafer W may be removed within the transfer module 50, the load lock modules 20 and 21, or the loader module 30. Heat or light may be used for removal, for example. Alternatively, the wafer W with the heat transfer layer D fixed to its lower surface may be placed directly into the hoop 31.

[0103] (Another example of the state inside the plasma processing chamber 100 when forming the heat transfer layer D) Figure 13 is a diagram illustrating another example of the state inside the plasma processing chamber 100 when the heat transfer layer D is formed. In the above example, the wafer W was not located inside the plasma processing chamber 100 when the heat transfer layer D was formed, but it may be located inside the plasma processing chamber 100. Specifically, as shown in Figure 13, when forming the heat transfer layer D, the wafer W may be located inside the plasma processing chamber 100 and separated from the wafer mounting surface 1041. More specifically, with the wafer W supported by the lifter 107 and separated from the wafer mounting surface 1041, the raw material gas may be supplied into the plasma processing chamber 100, and at least one of the liquefaction or solidification of the raw material gas may be performed to form the heat transfer layer D.

[0104] As in this example, when a heat transfer layer D is formed, it may be formed on the back surface (bottom surface), the front surface (top surface), and the side edges of the wafer W. In this case, the heat transfer layer D formed on the bottom surface of the wafer W is not a problem, but the heat transfer layer D formed on the other surfaces, especially the heat transfer layer D formed on the top surface of the wafer W, will interfere with the plasma processing.

[0105] The heat transfer layer D formed on the upper surface of the wafer W can be selectively removed before plasma processing without removing the heat transfer layer D formed on the wafer mounting surface, for example, as follows: By reducing the pressure inside the plasma processing chamber 100 while the wafer W is placed on the wafer mounting surface on which the heat transfer layer D is formed, the heat transfer layer D formed on the upper surface of the wafer W can be selectively removed before plasma processing. Alternatively, while the wafer W is placed on the wafer mounting surface on which the heat transfer layer D is formed, the heat transfer layer D formed on the upper surface of the wafer W may be selectively removed using plasma, heat, or light.

[0106] Furthermore, when removing the heat transfer layer D formed on the upper surface of the wafer W, other unnecessary parts, i.e., heat transfer layers formed on parts other than the upper surface and wafer mounting surface of the wafer W, may also be removed.

[0107] When selectively removing the heat transfer layer D formed on the upper surface of a wafer W by reducing the pressure inside the plasma processing chamber 100 while the wafer W is placed on the wafer mounting surface on which the heat transfer layer D is formed, the wafer W may be fixed to the wafer mounting surface in order to suppress vaporization of the heat transfer layer D formed on the wafer mounting surface. For example, a DC voltage may be applied to the electrode 109 of the electrostatic chuck 104 so that the wafer W is electrostatically attracted to the electrostatic chuck 104 by electrostatic force.

[0108] Furthermore, as in this example, when forming a heat transfer layer D with the wafer W supported by the lifter 107 and separated from the wafer mounting surface 1041, a suppression part may be provided to suppress the formation of the heat transfer layer D on the lifter 107. For example, when forming the heat transfer layer D by liquefying or solidifying the raw material gas by cooling, a heater such as a resistance heating element may be provided inside the lifter 107 as the suppression part, thereby raising the temperature of the lifter 107.

[0109] <Further variations of the configuration for forming the heat transfer layer D from the raw material gas> In the above example, the raw material gas was liquefied or solidified, and the heat transfer layer D was formed directly on the wafer mounting surface. Alternatively, the heat transfer layer D may be formed on the wafer mounting surface as follows.

[0110] Specifically, first, the raw material gas supplied into the plasma processing chamber 100 may be liquefied or solidified so that the heat transfer layer D is formed on at least the lower surface of the wafer W located inside the plasma processing chamber 100, without forming a heat transfer layer D on the wafer mounting surface. More precisely, under the control of the control unit 80, the raw material gas supplied into the plasma processing chamber 100 from the gas supply unit 130 may be liquefied or solidified so that the heat transfer layer D is selectively formed on at least the lower surface of the wafer W supported by the lifter 107 and separated from the wafer mounting surface 1041, without forming a heat transfer layer D on the wafer mounting surface. Subsequently, the heat transfer layer D may be formed on the wafer mounting surface by placing the wafer W with the heat transfer layer D formed on its lower surface onto the wafer mounting surface. More specifically, under the control of the control unit 80, the lifter 107 may be lowered to place the wafer W with the heat transfer layer formed on its lower surface onto the wafer mounting surface, thereby forming a heat transfer layer D on the wafer mounting surface.

[0111] The selective formation of the heat transfer layer D on the wafer W as described above can be achieved, for example, by pre-cooling the wafer W before it is brought into the plasma processing chamber 100 (specifically, before it is supported by the lifter 107). When the wafer W is pre-cooled in this way, the tip, or upper end, of the lifter 107 may be made of an insulating material. This suppresses the cooling of the lifter 107 by heat transfer from the wafer W, and thus suppresses the formation of the heat transfer layer D on the lifter 107. The wafer W is pre-cooled, for example, within the transfer module 50, load lock modules 20 and 21, or loader module 30.

[0112] In this example, the control unit 80, the wafer lifting mechanism including the lifter 107, and the gas supply unit 130 can function as at least part of a heat transfer layer forming unit configured to form a heat transfer layer D on the wafer mounting surface.

[0113] (Second Embodiment) Figure 14 is a longitudinal cross-sectional view showing a schematic configuration of a processing module as a plasma processing apparatus according to the second embodiment. Note that Figure 14 shows a cross-section of a part of the wafer support base that is different from that shown in Figure 4, etc., and therefore the lifter 107, support member 110, and drive unit 111 are omitted from the illustration. In other words, the processing module 60E in Figure 14 has a lifter 107, support member 110, and drive unit 111, similar to the processing module 60 in Figure 2.

[0114] In the first embodiment, the heat transfer layer D was formed from the raw material gas supplied to the plasma processing space 100s. In contrast, in this embodiment, a heat transfer medium, which consists of at least one of a liquid medium or a fluid solid medium, is supplied to the wafer mounting surface 104E1 via the wafer support base 101E, and the heat transfer layer D is formed from the heat transfer medium.

[0115] Therefore, in the processing module 60E shown in Figure 14, a heat transfer medium supply port 300 is formed on the wafer mounting surface 104E1 of the electrostatic chuck 104E of the wafer support base 101E. For example, multiple supply ports 300 are provided on the wafer mounting surface 104E1. A groove 320 may be provided on the wafer mounting surface 104E1. The groove 320 is formed so that the heat transfer medium spreads along the wafer mounting surface 104E1 through the groove 320.

[0116] Furthermore, a flow channel 310 is provided inside the wafer support base 101E, with one end of the flow channel 310 having fluid communication with each supply port 300. The other end of the flow channel 310 is fluidly connected to, for example, the gas supply unit 130E. The flow channel 310 is formed to be narrow at the end on the wafer mounting surface 104E1 side (specifically, for example, the part located inside the electrostatic chuck 104E), so that the heat transfer medium in the flow channel 310 is supplied to the wafer mounting surface 104E1 via the supply port 300 by capillary action. The flow channel 310 is formed to span, for example, the electrostatic chuck 104E, the lower electrode 103E, and the insulator 105E.

[0117] The gas supply unit 130E may include one or more gas sources 131E and one or more flow controllers 132E. In one embodiment, the gas supply unit 130E is configured to supply, for example, one or more gases for generating the heat transfer medium (hereinafter referred to as heat transfer medium generating gases) from the corresponding gas sources 131E to the corresponding flow controllers 132E to the wafer support base 101E. Each flow controller 132E may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 130E may include one or more flow modulation devices that modulate or pulse the flow rate of one or more heat transfer medium generating gases.

[0118] The heat transfer medium generating gas supplied from the gas supply unit 130E is cooled within the flow path 310, for example, by the lower electrode 103E cooled by a temperature-controlled fluid, and liquefies or solidifies, transforming into a heat transfer medium composed of at least one of a liquid medium or a fluid solid medium. As described above, this heat transfer medium is supplied to the wafer mounting surface 104E1 via the supply port 300, for example, by capillary action, to form a heat transfer layer D. Therefore, the gas supply unit 130E can function as at least part of a heat transfer layer forming unit configured to form a heat transfer layer D on the wafer mounting surface 104E1.

[0119] <Wafer processing of processing module 60E> Next, an example of wafer processing performed using the processing module 60E will be explained with reference to Figures 15 to 19. Figure 15 is a flowchart illustrating the example of wafer processing described above. Figures 16 to 19 show the state of the processing module 60E during the wafer processing described above. The following processing is performed under the control of the control unit 80.

[0120] For example, first, as shown in Figures 15 and 16, the wafer W is placed on the wafer mounting surface 104E1 of the wafer support base 101E (step S11). Specifically, the wafer W is transported into the plasma processing chamber 100 by the transport mechanism 70 and placed on the wafer mounting surface 104E1 of the electrostatic chuck 104E by the raising and lowering of the lifter 107. Subsequently, the inside of the plasma processing chamber 100 is depressurized to a predetermined vacuum level (pressure p1) by the exhaust system 150.

[0121] Next, as shown in Figure 17, a deformable heat transfer layer D is formed on the wafer mounting surface 104E1, consisting of at least one of a liquid layer or a solid layer (step S12). Specifically, a heat transfer medium consisting of at least one of a liquid medium or a fluid solid medium is supplied between the wafer mounting surface 104E1 and the back surface of the wafer W via the wafer mounting surface 104E1, thereby forming the heat transfer layer D.

[0122] More specifically, the wafer W is held on the wafer support base 101E. For example, a DC voltage is applied to the electrode 109 of the electrostatic chuck 104E, and the wafer W is electrostatically attracted to the electrostatic chuck 104E by electrostatic force. At this time, the temperature of the wafer mounting surface 104E1 is adjusted to temperature T1, and therefore the temperature inside the flow path 310 is also adjusted to temperature T1. Note that temperature T1 is set to a temperature at which the process can be effectively carried out, for example, to be equal to the temperature of the wafer mounting surface 104E1 during the process.

[0123] After the wafer W is held on the wafer support base 101E, a heat transfer medium generating gas is supplied from the gas supply unit 130E to the flow path 310 of the wafer support base 101E at a temperature T2 (>T1) and a pressure p2 (>p1). The heat transfer medium generating gas supplied to the flow path 310 is cooled to a temperature T1 within the flow path 310 and becomes a heat transfer medium composed of at least one of a liquid medium or a fluid solid medium. This heat transfer medium is then supplied to the wafer mounting surface 104E1 via the supply port 300, for example, by capillary action. The heat transfer medium supplied to the wafer mounting surface 104E1 spreads along the wafer mounting surface 104E1 by capillary action in the gap between the wafer mounting surface 104E1 and the back surface of the wafer W, forming a heat transfer layer D. Since the heat transfer layer D is formed from a heat transfer medium composed of at least one of a liquid medium or a fluid solid medium, it is a layer composed of at least one of a liquid medium or a fluid solid medium, similar to that of the first embodiment, and is also deformable.

[0124] Furthermore, if the gap between the wafer mounting surface 104E1 and the back surface of the wafer W is too narrow, the viscosity of the heat transfer medium may prevent it from spreading along the wafer mounting surface 104E1 by capillary action. Therefore, as described above, by providing grooves 320 on the wafer mounting surface 104E1, the gap between the wafer mounting surface 104E1 and the back surface of the wafer W can be widened, allowing the heat transfer medium to spread appropriately along the wafer mounting surface 104E1 by capillary action. Furthermore, to facilitate the transfer of the heat transfer medium by capillary action, a heat transfer medium with low viscosity may be used.

[0125] The supply of the heat transfer medium to the wafer mounting surface 104E1 (specifically, the supply of the gas for generating the heat transfer medium from the gas supply unit 130E) is stopped, for example, when the supply amount reaches a predetermined amount (specifically, when the supply time of the gas for generating the heat transfer medium from the gas supply unit 130E exceeds a predetermined time). Alternatively, for example, a monitoring means such as a camera may be used to monitor for leakage of the heat transfer medium from between the wafer mounting surface 104E1 and the back surface of the wafer W, and the supply of the heat transfer medium to the wafer mounting surface 104E1 may be stopped when leakage is detected. In this case, the monitoring means such as a camera may be located outside the plasma processing chamber 100, and monitoring, i.e., imaging, is performed through an optical window provided in the plasma processing chamber 100.

[0126] Then, plasma treatment is performed on the wafer W on the wafer mounting surface 104E1 on which the heat transfer layer D is formed (step S13). Specifically, plasma treatment is performed on the wafer W on which the heat transfer layer D is formed between the wafer mounting surface 104E1 and the wafer W.

[0127] More specifically, for example, while the wafer W is held on the wafer support stand 101E, as shown in Figure 18, a processing gas is supplied from the gas supply unit 120 to the plasma processing space 100s via the upper electrode 102, and high-frequency power HF for plasma generation is supplied from the RF power supply unit 140 to the lower electrode 103E. This excites the processing gas and generates plasma P3. At this time, high-frequency power LF for ion pulling may also be supplied from the RF power supply unit 140. Then, the generated plasma P3 acts on the wafer W to perform plasma processing.

[0128] During plasma processing, the wafer mounting surface 104E1 is adjusted to a predetermined temperature T1 by a temperature-controlled fluid flowing through the channel 108 to control the temperature of the wafer W. Furthermore, during plasma processing, the wafer W is placed on the wafer mounting surface 104E1 via the heat transfer layer D, and since the heat transfer layer D is deformable as described above, the lower surface, i.e., the back surface, of the wafer W is in close contact with the heat transfer layer D. The heat transfer layer D is formed from a heat transfer medium, and since this heat transfer medium is composed of at least one of a liquid medium or a fluid solid medium, it has higher thermal conductivity than a heat transfer gas such as He. Therefore, when using the heat transfer layer D, the temperature of the wafer W can be adjusted more efficiently via the wafer mounting surface 104E1 compared to the conventional method of flowing a heat transfer gas such as He between the wafer mounting surface 104E1 and the back surface of the wafer W. Specifically, even if there is a large amount of heat input from the plasma P3 to the wafer W during plasma processing, the temperature of the wafer W can be kept constant via the temperature control of the wafer mounting surface 104E1. Furthermore, if the set temperature of the wafer W is changed during plasma processing, the temperature of the wafer W can be immediately changed to the new set temperature via the temperature control of the wafer mounting surface 104E1. During plasma processing, if the wafer W is held on the wafer support base 101E by electrostatic force, the degree of contact between the wafer W and the wafer support base 101E may be controlled by the electrostatic force, thereby controlling the heat dissipation from the wafer W by the wafer support base 101E.

[0129] During plasma processing, the pressure p3 applied to the heat transfer layer D, including the pressure applied to the heat transfer layer D by electrostatic adsorption of the wafer W, is between 0.1 Torr and 100 Torr. Furthermore, during plasma processing, a DC voltage may be applied to the electrode for edge ring adsorption of the electrostatic chuck 104, thereby electrostatically adsorbing and holding the edge ring E to the electrostatic chuck 104. In addition, during plasma processing, heat transfer gas may be supplied toward the back surface of the edge ring E from a gas supply hole (not shown) formed on the upper surface 1042 of the peripheral edge of the electrostatic chuck 104.

[0130] When the plasma processing is completed, the supply of high-frequency power HF from the RF power supply unit 140 and the supply of processing gas from the gas supply unit 120 are stopped. If high-frequency power LF was being supplied during the plasma processing, the supply of said high-frequency power LF is also stopped. In addition, the inside of the plasma processing chamber 100 is depressurized to a predetermined vacuum level (pressure p1) by the exhaust system 150. The above pressure p1 is, for example, less than 0.001 Torr. If heat transfer gas is being supplied to the back surface of the edge ring E, the supply of said heat transfer gas may be stopped.

[0131] After plasma treatment, the wafer W is separated from the wafer mounting surface 104E1, and the heat transfer layer D is removed (step S14). In one example, the heat transfer layer D is removed by vaporization. Specifically, after the holding of the wafer W on the wafer support base 101E (for example, by the electrostatic chuck 104E) is stopped, the wafer W is raised by the lifter 107 and separated from the wafer mounting surface 104E1, as shown in Figure 18. Once separated, the heat transfer layer D is exposed to a reduced pressure atmosphere, specifically to an atmosphere with a pressure p1 of less than 0.001 Torr, which causes it to vaporize and be removed.

[0132] To enable such vaporization, the heat transfer medium used to form the heat transfer layer D is a liquid or fluid solid at temperature T1 at a pressure p3 of 0.1 to 100 Torr, and a gas at temperature T1 at a pressure p1 of less than 0.001 Torr.

[0133] Furthermore, the heat transfer medium generating gas that produces the heat transfer medium forming the heat transfer layer D includes, for example, at least one of B (boron) or C (carbon), which are constituent atoms of the heat transfer layer D, and at least one of H (hydrogen), N (nitrogen), or O (oxygen) which constitute the gas components. In addition, it is preferable that the heat transfer medium generating gas consists of components that do not interfere with the plasma treatment. Furthermore, to remove the heat transfer layer D from the wafer mounting surface 104E1, at least one of plasma, heat, or light may be used instead of, or in combination with, exposure to a reduced-pressure atmosphere.

[0134] Then, wafer W is unloaded (step S15). Specifically, the wafer W is transferred from the lifter 107 to the transfer mechanism 70, and then removed from the plasma processing chamber 100 by the transfer mechanism 70. This completes the series of wafer processing steps.

[0135] <Effects, etc.> As described above, in this embodiment as well, the heat transfer layer D is composed of at least one of a liquid layer or a solid layer, and therefore has a higher thermal conductivity than a heat transfer layer made of a heat transfer gas, i.e., a gas. Furthermore, since the heat transfer layer D is deformable, it can be in close contact with the lower surface of the wafer W. Therefore, in this embodiment as well, heat can be efficiently exchanged between the wafer W and the wafer mounting surface 104E1 via the heat transfer layer D. Consequently, the temperature of the wafer W can be efficiently controlled via the wafer mounting surface 104E1 during plasma processing.

[0136] Furthermore, since the heat transfer medium forming the heat transfer layer D is composed of a liquid or a fluid solid, it is possible to suppress clogging of the flow path 310 by the heat transfer medium. Furthermore, in the example described above, the heat transfer layer D vaporizes and is removed when the wafer W is separated from the wafer mounting surface 104E1, so there is no need to provide a separate step for removing the heat transfer layer D. Therefore, throughput can be improved.

[0137] <Variations in the supply method of heat transfer medium> In the above example, the gas for generating the heat transfer medium was supplied to the wafer support base 101E from an external source and converted into the heat transfer medium within the wafer support base 101E. However, the heat transfer medium may also be supplied directly to the wafer support base 101 from an external source.

[0138] Furthermore, in the above example, the heat transfer medium within the wafer support base 101E was supplied to the wafer mounting surface 104E1 by capillary action. Alternatively, the heat transfer medium within the wafer support base 101E may be supplied to the wafer mounting surface 104E1 by the supply pressure of the heat transfer medium generation gas to the wafer support base 101E from an external source, or by the supply pressure of the heat transfer medium to the wafer support base 101E from an external source.

[0139] <Variations of heat transfer medium> As described above, when supplying the heat transfer medium from the wafer support 101E to the wafer mounting surface 104E1 by supply pressure of the heat transfer medium from the outside to the wafer support 101E, the following may be used as the heat transfer medium. That is, a heat transfer medium containing a powder with higher thermal conductivity than the base material of the heat transfer medium may be used. Specifically, the powder with higher thermal conductivity than the base material of the heat transfer medium is, for example, carbon nanotube powder.

[0140] Furthermore, when supplying the heat transfer medium within the wafer support base 101E to the wafer mounting surface 104E1 by supplying a heat transfer medium generation gas from an external source to the wafer support base 101E, a mist containing the above-mentioned highly thermally conductive powder may be used as the heat transfer medium generation gas. By cooling this heat transfer medium generation gas in the flow path 310, it can be transformed into a heat transfer medium mixed with highly thermally conductive powder, and this heat transfer medium can be supplied to the wafer mounting surface 104E1.

[0141] <Specific example of groove 320> Figures 20 and 21 show specific examples of groove 320. As shown in Figure 20, the wafer mounting surface 104E1 of the electrostatic chuck 104E may have multiple support columns 321 formed thereon to support the back surface of the wafer W. In this case, for example, the recesses formed between the support columns 321 constitute a groove 320. Furthermore, a porous material (specifically, a porous ceramic) 322 may be placed in the groove 320, as shown in Figure 21, to fill the groove 320. This allows the shape of the wafer W to be maintained when electrostatically adsorbed by the electrostatic chuck 104E, regardless of the shape of the groove 320. When a porous material 322 is used, the heat transfer medium moves through the pores of the porous material by capillary action, and can spread along the wafer mounting surface 104E1.

[0142] <Other examples of wafer mounting surfaces according to the second embodiment> In this embodiment, the wafer mounting surface may be made of a porous material in portions other than the groove 320 (specifically, for example, the top of the support column 321). Furthermore, if the wafer mounting surface does not have a groove 320, the entire surface of the wafer mounting surface may be made of a porous material.

[0143] <Example of a heat transfer layer D on the wafer mounting surface 104E1> In this embodiment as well, the heat transfer layer D is formed over the entire wafer mounting surface 104E1, including the central and peripheral regions of the wafer mounting surface 104E1. However, the heat transfer layer D may be formed only in a portion of the wafer mounting surface 104E1. For example, the heat transfer layer D may be formed only in the central or peripheral region of the wafer mounting surface 104E1. For example, by forming grooves 320 only in a portion of the wafer mounting surface 104E1, such as the central region, the heat transfer layer D can be formed only in that portion of the surface.

[0144] Furthermore, in this embodiment as well, the heat transfer layer D has a uniform thickness over the entire wafer mounting surface 104E1, including the central and peripheral regions of the wafer mounting surface 104E1, but its thickness may vary within the plane of the wafer mounting surface 104E1. For example, the heat transfer layer D may be made thinner only in the central or peripheral region of the wafer mounting surface 104E1. This makes it possible to vary the heat exchange efficiency between the wafer mounting surface 104E1 and the wafer W within the plane, and to increase the heat exchange efficiency in only a part of the region. Furthermore, if grooves 320 are formed on the wafer mounting surface 104E1, the depth of the grooves 320 can be varied for each region on the wafer mounting surface 104E1, thereby making the heat transfer layer D thinner in only certain regions, such as the central region.

[0145] Furthermore, if grooves 320 are not formed on the wafer mounting surface 104E1 and its entire surface is formed of a porous material, the thickness of the porous material can be varied in each region of the wafer mounting surface 104E1, similar to the case where the depth of grooves 320 is varied in each region of the wafer mounting surface 104E1, thereby varying the heat exchange efficiency between the wafer mounting surface 104E1 and the wafer W within the surface.

[0146] Furthermore, the heat transfer layer D may be formed by mixing a conductive medium with high thermal conductivity and a conductive medium with low thermal conductivity, and the mixing ratio of the conductive medium with high thermal conductivity and the conductive medium with low thermal conductivity may be varied in each region of the wafer mounting surface 104E1. This also makes it possible to vary the heat exchange efficiency between the wafer mounting surface 104E1 and the wafer W within the plane.

[0147] Furthermore, the density of the grooves 320 may be varied in each region of the wafer mounting surface 104E1. In other words, if the recesses formed between the support columns 321 constitute the grooves 320, the density of the support columns 321 may be varied in each region of the wafer mounting surface 104E1. This also makes it possible to vary the heat exchange efficiency between the wafer mounting surface 104E1 and the wafer W within the plane.

[0148] <Modified form of the second embodiment> In the above example, the heat transfer layer D was formed after the wafer W was placed on the wafer mounting surface 104E1, but the heat transfer layer D may also be formed before the wafer W is placed on the wafer mounting surface 104E1. However, in this case, the heat transfer medium used is one that exists as at least one of a liquid or solid even when the wafer W is not located on the wafer mounting surface 104E1. In this case, when forming the heat transfer layer D, the wafer W may be located inside the plasma processing chamber 100 and separated from the wafer mounting surface 104E1, similar to the example described using Figure 13.

[0149] (Third embodiment) Figure 22 is a longitudinal cross-sectional view showing a schematic configuration of a processing module as a plasma processing apparatus according to the third embodiment.

[0150] Unlike the processing module 60 in Figure 2, the processing module 60F in Figure 22 is not supplied with the raw material gas for the heat transfer layer D, and unlike the processing module 60E in Figure 14, it is not supplied with the heat transfer medium that forms the heat transfer layer D via the wafer support base 101.

[0151] In the processing module 60F shown in Figure 22, a deformable heat transfer layer D, composed of a liquid layer or a solid layer, is formed on the wafer mounting surface 1041 of the wafer support base 101 as follows. In other words, a wafer W on which the heat transfer layer D is pre-formed on its back surface is placed on the wafer mounting surface 1041 of the wafer support base 101, for example via a lifter 107, under the control of the control unit 80, thereby forming the heat transfer layer D on the wafer mounting surface 1041. Therefore, in this embodiment, the wafer lifting mechanism including the control unit 80 and the lifter 107 can function as at least a part of the heat transfer layer forming section configured to form a heat transfer layer D on the wafer mounting surface 1041.

[0152] The pre-formation of the heat transfer layer D on the underside of the wafer W is performed, for example, within the transfer module 50, the load lock modules 20 and 21, or the loader module 30. For this pre-formation, a gas that liquefies or solidifies at a predetermined temperature or below is used, and by cooling the underside of the wafer W to a predetermined temperature or below, the heat transfer layer D is pre-formed on the underside of the wafer W. Alternatively, a wafer W with the heat transfer layer D pre-formed on its underside outside the plasma processing system 1 may be housed in the hoop 31 and used from there.

[0153] In this embodiment as well, heat can be efficiently exchanged between the wafer W and the wafer mounting surface 1041 via the heat transfer layer D. Therefore, in this embodiment as well, the temperature of the wafer W can be efficiently controlled via the wafer mounting surface 1041 during plasma processing.

[0154] In this embodiment, the heat transfer layer D may be formed over the entire back surface of the wafer W, or it may be formed only in the central region or the peripheral region of the back surface of the wafer W. Furthermore, the heat transfer layer D may contain a filler (in one example, powder) with higher thermal conductivity than its base material.

[0155] (Fourth Embodiment) Figure 23 is a longitudinal cross-sectional view showing a schematic configuration of a processing module as a plasma processing apparatus according to the fourth embodiment.

[0156] Similar to the processing module 60F in Figure 22, the processing module 60G in Figure 23 is not supplied with the raw material gas for the heat transfer layer D, nor is it supplied with the heat transfer medium that forms the heat transfer layer D via the wafer support base 101.

[0157] In the processing module 60G shown in Figure 23, a deformable heat transfer layer D, composed of a liquid layer or a solid layer, is formed on the wafer mounting surface 1041 of the wafer support base 101 as follows. In other words, a tray T on which a wafer W is placed and on which a heat transfer layer D is formed between the tray and the wafer W is placed on the wafer mounting surface 1041 of the wafer support base 101, for example via a lifter 107, under the control of the control unit 80, thereby forming a heat transfer layer D on the wafer mounting surface 1041 via the tray T. Therefore, in this embodiment as well, the wafer lifting mechanism including the control unit 80 and the lifter 107 can function as at least a part of the heat transfer layer forming section configured to form a heat transfer layer D on the wafer mounting surface 1041.

[0158] The tray T may, for example, be housed within the hoop 31 with the wafer W placed on it via the heat transfer layer D.

[0159] In this embodiment, the heat transfer layer D may be formed over the entire back surface of the wafer W, as in the third embodiment, or it may be formed only in the central region or the peripheral region of the back surface of the wafer W. Furthermore, the heat transfer layer D may contain a filler (in one example, powder) with higher thermal conductivity than its base material.

[0160] The material of tray T is, for example, the same material as edge ring E. Furthermore, when plasma etching is performed as a plasma treatment in the processing module 60, the material of the tray T may be changed according to the material of the layer to be etched. The thickness of the tray T may be optimized so that the height of the wafer W edge reaches a desired height. The tray T may be electrically isolated between the region facing the wafer W and the other regions.

[0161] In this embodiment, a heat transfer layer similar to the heat transfer layer D may be formed between the tray T and the wafer mounting surface 1041. The heat transfer layer similar to the above can be formed in the same manner as the heat transfer layer D.

[0162] <Variations of the 1st to 4th embodiments> The wafer mounting surface of the wafer support may have a constant height in the central region and the peripheral region, that is, it may be macroscopically flat, or the central region may be higher, or the peripheral region may be higher.

[0163] If the wafer mounting surface is formed with a high convex shape in the central region, when a wafer W, which is hotter than the wafer mounting surface, is placed on the wafer mounting surface, and the wafer W is cooled from the back surface and thermally deformed to become convex, the wafer W and the wafer mounting surface can be brought into close contact. Furthermore, if the wafer mounting surface is formed as a low concave shape in the central region, when a wafer W at a lower temperature than the wafer mounting surface is placed on the wafer mounting surface, and the wafer W is heated from the back surface and thermally deformed to become concave, the wafer W and the wafer mounting surface can be brought into close contact.

[0164] In the case where a tray T is used, as in the fourth embodiment, the tray T and the wafer mounting surface can be brought into close contact in the same manner.

[0165] As described above, the heat transfer layer D may be formed on the entire back surface of the wafer mounting surface or wafer W, or it may be formed only on a part of the back surface of the wafer mounting surface or wafer W (specifically, for example, either the central region or the peripheral region). For areas on the back surface of the wafer mounting surface or wafer W where the heat transfer layer D is not formed, a heat transfer gas such as He gas may be supplied.

[0166] In the above example, an electrostatic chuck was used as the fixing part for holding, i.e., fixing, the wafer W to the wafer mounting surface, by attracting and holding it using electrostatic force generated by applying a DC voltage to the internal electrodes 109. The fixing part that electrically holds, or fixes, the wafer W is not limited to one that holds it by electrostatic force, but may also hold it by the Johnsen-Rabec force. The fixing part described above is not limited to those that hold electrically as described above. For example, the fixing part may be a clamp or other physically fixing device. A clamp is one that fixes the wafer W by sandwiching it between the clamp and the wafer support base. The above-mentioned fixing part may be omitted.

[0167] <Regarding the electrical characteristics of heat transfer layer D> The heat transfer layer D may have electrical insulating properties. This generates a residual charge in the heat transfer layer D, which can then be used for electrostatic adsorption of the wafer W. Furthermore, the heat transfer layer D may be conductive. This allows for the removal of residual charge generated on the wafer W via the heat transfer layer D. Furthermore, the heat transfer layer D may be constructed by enclosing a conductive portion with an electrically insulating portion. This ensures high thermal conductivity in the conductive portion, while the electrically insulating portion can electrostatically attract the wafer W with residual charge generated in that portion.

[0168] (Fifth embodiment) <Plasma Treatment System> Figure 24 is a schematic plan view showing the configuration of a plasma processing system including a processing module as a plasma processing apparatus according to the fifth embodiment.

[0169] The reduced pressure section 11 of the plasma processing system 1A in Figure 24 includes a transfer module 50, a processing module 60H as a plasma processing device, and a storage module 62 as a storage unit for the edge ring E. The inside of the processing module 60H (specifically, the inside of the plasma processing chamber 100) and the inside of the storage module 62 are maintained in a reduced pressure atmosphere. For one transfer module 50, there are multiple processing modules 60H, for example, six, and multiple storage modules 62, for example, two.

[0170] The processing module 60H is connected to the transfer module 50 via the gate valve 61. The differences between this processing module 60H and the processing module 60 shown in Figure 1 will be described later.

[0171] The storage module 62 is connected to the transfer module 50 via a gate valve 63.

[0172] In this embodiment, the transfer module 50 transports not only the wafer W but also the edge ring E. Specifically, the transfer module 50 transports the edge ring E in the storage module 62 to a processing module 60H, and also unloads the edge ring E to be replaced from the processing module 60H to the storage module 62. Furthermore, the transport mechanism 70 is configured to transport not only the wafer W but also the edge ring E, and the transport arm 71 of the transport mechanism 70 is configured to support not only the wafer W but also the edge ring E. In the transfer module 50, the transport arm 71 receives the edge ring E from the storage module 62 and transports it into the processing module 60E. The transport arm 71 also receives the edge ring E held within the processing module 60E and transports it back to the storage module 62.

[0173] The wafer processing performed using plasma processing system 1A is the same as the wafer processing performed using plasma processing system 1 shown in Figure 1, so its explanation will be omitted.

[0174] <Processing Module 60H> Figure 25 is a longitudinal cross-sectional view showing a schematic configuration of the processing module 60H.

[0175] In the processing module 60 shown in Figure 2, the wafer W was the object whose temperature was adjusted via the wafer support and the deformable heat transfer layer D as described above. In contrast, in the processing module 60H shown in Figure 25, not only the wafer W but also the edge ring E is the object whose temperature is adjusted via the wafer support and the deformable heat transfer layer. Therefore, the processing module 60H shown in Figure 25 differs from the processing module 60 shown in Figure 2 mainly in the configuration of the wafer support. The following will mainly explain these differences.

[0176] The wafer support base 101H of the processing module 60H includes, for example, a lower electrode 103H, an electrostatic chuck 104H, an insulator 105H, and legs 106, and is provided with a lifter 107 and a lifter 400.

[0177] Similar to the electrostatic chuck 104 in Figure 2, the electrostatic chuck 104H has a wafer mounting surface 1041 in the center, and the upper surface 104H2 at the periphery becomes the ring mounting surface on which the edge ring E is placed.

[0178] This electrostatic chuck 104H is an example of a fixing part that fixes the edge ring E to the upper surface 104H2 of the peripheral edge of the electrostatic chuck 104H, i.e., the ring mounting surface. The electrostatic chuck 104H has an electrode 109 in the center for holding the wafer W by electrostatic attraction, and an electrode 401 in the peripheral edge for holding the edge ring E by electrostatic attraction.

[0179] A DC voltage from a DC power supply (not shown) is applied to the electrode 401. The resulting electrostatic force causes the edge ring E to be attracted and held on the upper surface of the peripheral edge of the electrostatic chuck 104H (hereinafter referred to as the ring mounting surface) 104H2. The electrode 401 is, for example, a bipolar type including a pair of electrodes, but it may also be a unipolar type.

[0180] The lifter 400 is a lifting member that moves up and down relative to the ring mounting surface 104H2 of the electrostatic chuck 104H, and is formed, for example, in a columnar shape. When the lifter 400 is raised, its upper end protrudes from the ring mounting surface 104H2, making it possible to support the edge ring E. This lifter 400 allows the edge ring E to be transferred between the electrostatic chuck 104H and the transport arm 71 of the transport mechanism 70. Furthermore, three or more lifters 400 are provided along the circumferential direction of the electrostatic chuck 104H, spaced apart from each other. The lifters 400 are also provided to extend in the vertical direction.

[0181] The lifter 400 is connected to a drive unit 402 that raises and lowers the lifter 400. A drive unit 402 is provided for each lifter 400, for example. The drive unit 402 also has a motor (not shown) as a drive source that generates the driving force to raise and lower the lifter 400.

[0182] The lifter 400 is inserted through a through hole 403 whose upper end opens into the ring mounting surface 104H2 of the electrostatic chuck 104H. The through hole 403 is formed to penetrate, for example, the peripheral edge of the electrostatic chuck 104H, the lower electrode 103H, and the insulator 105H.

[0183] In the processing module 60H, a liquid heat transfer layer DA is formed on the ring mounting surface 104H2 of the wafer support base 101H, for example, from a gas containing raw material gas supplied from the gas supply unit 130. Therefore, in the processing module 60H, the gas supply unit 130 can function as at least part of a heat transfer layer forming unit configured to form the heat transfer layer DA on the ring mounting surface 104H2.

[0184] Furthermore, in the processing module 60H, the RF power supply unit 140 may supply RF power to generate plasma from the raw material gas that serves as the raw material for the heat transfer layer DA supplied to the plasma processing space 100s. Therefore, the RF power supply unit 140 can function as at least part of another plasma generation unit configured to generate plasma from the raw material gas in the plasma processing chamber 100.

[0185] <Wafer processing using processing module 60H> Next, an example of wafer processing, including the replacement of the edge ring E, performed using the processing module 60H, will be described. This will be explained using Figures 26 to 30. Figure 26 is a flowchart illustrating the example of wafer processing described above. Figures 27 to 30 show the state of the processing module 60H during the wafer processing described above. Note that the following processing is performed under the control of the control unit 80.

[0186] For example, first, as shown in Figure 26, a heat transfer layer DA is formed on the ring mounting surface 104H2 of the wafer support base 101H (step S21).

[0187] More specifically, first, with the wafer W and edge ring E not yet placed on the wafer support base 101H, a gas containing the raw material gas for the liquid heat transfer layer DA is supplied from the gas supply unit 130 via the upper electrode 102 to the inside of the plasma processing chamber 100, which has been depressurized to a predetermined vacuum level by the exhaust system 150, as shown in Figure 27. At the same time, high-frequency power HF for plasma generation is supplied from the RF power supply unit 140 to the lower electrode 103. This excites the raw material gas and generates plasma P11. Then, the liquid heat transfer layer DA is formed on the ring mounting surface 104H2, etc., by the action of the generated plasma P11. After the heat transfer layer DA is formed, the supply of high-frequency power HF from the RF power supply unit 140 and the supply of gas containing the raw material gas from the gas supply unit 130 are stopped.

[0188] Next, as shown in Figure 28, the edge ring E is placed on the ring mounting surface 104H2 of the wafer support base 101H (step S22). Specifically, the edge ring E is transported into the plasma processing chamber 100 by the transport mechanism 70 and placed on the ring mounting surface 104H2 of the electrostatic chuck 104H by the raising and lowering of the lifter 400. Subsequently, the inside of the plasma processing chamber 100 is depressurized to a predetermined vacuum level by the exhaust system 150.

[0189] The edge ring E is transported into the plasma processing chamber 100, for example, as follows. Specifically, first, the edge ring E in the storage module 62 is held by the transport arm 71 of the transport mechanism 70. Next, the transport arm 71 holding the edge ring E is inserted into the plasma processing chamber 100 of the processing module 60H via an inlet / outlet (not shown). Then, the edge ring E is transported by the transport arm 71 above the ring mounting surface 1042 of the electrostatic chuck 104H. Subsequently, the lifter 400 is raised and lowered and the transport arm 71 is withdrawn from the plasma processing chamber 100, thereby placing the edge ring E on the ring mounting surface 104H2 of the electrostatic chuck 104H.

[0190] Next, the heat transfer layer DA formed in the part of the plasma processing chamber 100 other than the ring mounting surface 104H1 is removed (step S23).

[0191] Specifically, as shown in Figure 29, a removal gas for removing the heat transfer layer DA is supplied from the gas supply unit 120 to the plasma processing space 100s via the upper electrode 102, and high-frequency power HF for plasma generation is supplied from the RF power supply unit 140 to the lower electrode 103H. This excites the removal gas and generates plasma P12. The generated plasma P12 then removes the heat transfer layer DA formed on parts other than the ring mounting surface 104H2 (for example, the inner wall surface of the plasma processing chamber 100, such as the lower surface of the upper electrode 102, and the wafer mounting surface 1041). Note that the heat transfer layer DA formed on the ring mounting surface 104H2 is covered by the wafer W and is not exposed to plasma P12, so it is not removed. After the removal of the heat transfer layer DA, the supply of high-frequency power HF from the RF power supply unit 140 and the supply of removal gas from the gas supply unit 120 are stopped.

[0192] Then, plasma treatment is performed on the wafer W on the upper surface of the electrostatic chuck 104H, i.e., on the mounting surface, where the heat transfer layer DA is formed (step S24). Specifically, plasma processing is performed in the same manner as the process described using Figure 3, for example. More specifically, for example, a heat transfer layer D is formed on the wafer mounting surface 1041 of the wafer support base 101H, then a wafer W is placed on the wafer mounting surface 1041, and then plasma processing is performed on the wafer W. Then the wafer W is removed. After removal, the heat transfer layer D may be removed from the wafer mounting surface 1041.

[0193] During plasma processing, the ring mounting surface 104H2 is adjusted to a predetermined temperature by a temperature-controlled fluid flowing through the channel 108 to control the temperature of the edge ring E. Furthermore, during plasma processing, the edge ring E is mounted on the ring mounting surface 104H2 via a heat transfer layer DA, and because the heat transfer layer DA is deformable, the lower surface, or back surface, of the edge ring E is in close contact with the heat transfer layer DA. Since the heat transfer layer DA is a liquid, it has higher thermal conductivity than a heat transfer gas such as He. Therefore, when using a liquid heat transfer layer DA, the temperature of the edge ring E can be adjusted more efficiently via the ring mounting surface 104H2 compared to when a heat transfer gas such as He flows between the ring mounting surface 104H2 and the back surface of the edge ring E. Specifically, even if there is a large amount of heat input from the plasma P to the edge ring E during plasma processing, the temperature of the edge ring E can be maintained at a constant level via the temperature control of the ring mounting surface 104H2. Furthermore, if the set temperature of the edge ring E is changed during plasma processing, the temperature of the edge ring E can be immediately changed to the new set temperature via the temperature control of the ring mounting surface 104H2.

[0194] During plasma processing, the edge ring E may be held, or fixed, to the wafer support base 101H (specifically, the ring mounting surface 104H2) in order to bring the heat transfer layer DA and the lower surface of the edge ring E into closer contact. For example, the edge ring E may be held by attraction to the ring mounting surface 104H2 by the electrostatic force of the electrostatic chuck 104H. More specifically, a DC voltage may be applied to the electrode 401 of the electrostatic chuck 104H so that the edge ring E is electrostatically attracted to the electrostatic chuck 104H by electrostatic force. By being held in the manner described above, the temperature of the edge ring E can be adjusted more efficiently. Furthermore, during the removal of the heat transfer layer DA in step S13, the edge ring E may be held on the wafer support base 101H by electrostatic force or the like. Furthermore, if the edge ring E is held on the wafer support base 101H by electrostatic force, the degree of contact between the edge ring E and the wafer support base 101 may be controlled by electrostatic force, thereby controlling the heat dissipation from the edge ring E by the wafer support base 101H.

[0195] After plasma treatment of the wafer W, the edge ring E is separated from the ring mounting surface 104H2 and removed (step S25). Separation of the edge ring E from the ring mounting surface 104H2, i.e., removal of the edge ring E, does not need to be performed after each plasma treatment of the wafer W, but is performed, for example, when the edge ring E is worn out or when the heat transfer layer DA is damaged or worn out by the plasma.

[0196] In step S25, specifically, the edge ring E is raised by the lifter 400 and separated from the heat transfer layer DA on the ring mounting surface 104H2. Subsequently, the edge ring E is transferred from the lifter 400 to the transport mechanism 70, which then transports it out of the plasma processing chamber 100.

[0197] Then, the heat transfer layer DA is removed from the ring mounting surface 104H2 (step S26).

[0198] Specifically, as shown in Figure 30, a removal gas for removing the heat transfer layer DA is supplied from the gas supply unit 120 to the plasma processing space 100s via the upper electrode 102, and high-frequency power HF for plasma generation is supplied from the RF power supply unit 140 to the lower electrode 103H. This excites the removal gas and generates plasma P12. The generated plasma P12 then removes the heat transfer layer DA from the ring mounting surface 104H2. After the removal of the heat transfer layer DA, the supply of high-frequency power HF from the RF power supply unit 140 and the supply of removal gas from the gas supply unit 120 are stopped. Subsequently, the process returns to step S21, and steps S22 and S23 are performed, during which a heat transfer layer DA is formed on the ring mounting surface 104H2, and a new edge ring E is placed on the ring mounting surface 104H2.

[0199] Furthermore, the removal of the heat transfer layer DA from the ring mounting surface 104H2 in step S26 does not need to be performed for each edge ring E. In other words, the heat transfer layer DA on the ring mounting surface 104H2 may be shared among multiple edge rings E.

[0200] <Other examples of heat transfer layer DA> In the above example, the heat transfer layer DA for the edge ring E was a liquid layer, but the heat transfer layer DA may be a solid layer as long as it is deformable. Furthermore, the heat transfer layer DA may be a combination of a liquid layer and a solid layer, provided that it is deformable.

[0201] In other words, the heat transfer layer DA for the edge ring E is a deformable layer, similar to the heat transfer layer D for the wafer W, and is composed of at least one of a liquid layer or a solid layer. Note that the heat transfer layer DA for the edge ring E may be the same as or different from the heat transfer layer D for the wafer W.

[0202] <Effects, etc.> As described above, in this embodiment, a deformable heat transfer layer DA, composed of at least one of a liquid layer or a solid layer, is formed on the wafer mounting surface 1041 of the wafer support base 101. Therefore, in this embodiment, for the same reasons as in the first embodiment, the temperature of the edge ring E can be efficiently adjusted via the ring mounting surface 104H2 during plasma processing.

[0203] Furthermore, in this embodiment, as described above, the edge ring E may be held in place by electrostatic force from the electrostatic chuck 104H during plasma processing, etc. This allows for closer contact between the heat transfer layer DA and the lower surface of the edge ring E, thereby further improving the heat dissipation efficiency from the edge ring E via the ring mounting surface 104H2 and the heat transfer layer DA, or the heating efficiency of the edge ring E.

[0204] <Examples of the state and electrical characteristics of the heat transfer layer DA on the ring mounting surface 104H2> The heat transfer layer DA for the edge ring E may be formed over the entire ring mounting surface 104H2, or it may be formed only in a portion of the ring mounting surface 104H2, similar to the heat transfer layer D for the wafer W. For example, the heat transfer layer DA may be formed only on the inner circumference side of the ring mounting surface 104H2, or the heat transfer layer DA may be formed only on the outer circumference side of the ring mounting surface 1042.

[0205] Furthermore, the heat transfer layer DA for the edge ring E may have different thicknesses within the plane of the ring mounting surface 104H2, similar to the heat transfer layer D for the wafer W. For example, the heat transfer layer DA may be thinner on the inner circumference side of the ring mounting surface 104H2 compared to the outer circumference side, or vice versa.

[0206] Furthermore, the heat transfer layer DA may be formed only on a portion of the ring mounting surface 104H2. In areas of the ring mounting surface 104H2 where the heat transfer layer DA is not formed, a heat transfer gas such as He gas may be supplied.

[0207] The heat transfer layer DA for the edge ring E may have electrical insulating properties. Furthermore, the heat transfer layer DA may be conductive. Furthermore, the heat transfer layer DA may be constructed by enclosing a conductive portion with an electrically insulating portion.

[0208] <Modified form of the fifth embodiment> In the example explained using Figure 3, etc., the processing module 60 in Figure 2 targeted only wafer W of the wafer W and edge ring E for temperature control via the wafer support 101 and heat transfer layer D. In the example explained using Figure 26, etc., the processing module 60H in Figure 25 targeted both wafer W and edge ring E for temperature control via the wafer support 101H and heat transfer layer D. However, in the processing module 60H in Figure 25, it is also possible to target only edge ring E of the wafer W and edge ring E for temperature control via the wafer support 101H and heat transfer layer D. That is, in the processing module 60H in Figure 25, it is possible to form only a heat transfer layer DA for edge ring E without forming a heat transfer layer D for wafer W.

[0209] Furthermore, in the example described using Figure 26 above, the temperature control applies to both the wafer W and the edge ring E, and the timing for forming the heat transfer layer D for the wafer W was different from the timing for forming the heat transfer layer DA for the edge ring E. However, in cases where the heat transfer layer D for the wafer W and the heat transfer layer DA for the edge ring E are the same, the timing for forming the heat transfer layer D for the wafer W may be the same as the timing for forming the heat transfer layer DA for the edge ring E. By making them the same, throughput can be improved.

[0210] If the timing for forming the heat transfer layer D for the wafer W and the timing for forming the heat transfer layer DA for the edge ring E are different, a dummy wafer may be placed on the wafer mounting surface 1041 when the heat transfer layer DA for the edge ring E is being formed.

[0211] Furthermore, in the example described using Figure 26 above, the timing for removing the heat transfer layer D for wafer W was different from the timing for removing the heat transfer layer DA for edge ring E. However, in cases where the edge ring E is replaced when wafer W is replaced, the timing for removing the heat transfer layer D for wafer W may be the same as the timing for removing the heat transfer layer DA for edge ring E. By making them the same, throughput can be improved.

[0212] Furthermore, the method of forming the heat transfer layer DA for the edge ring E from a raw material gas is not limited to the above example, and similar modifications as those described above for forming the heat transfer layer D for the wafer from a raw material gas can be applied.

[0213] Furthermore, the configuration for supplying the raw material gas for the heat transfer layer DA for the edge ring E to the plasma processing space 100s is not limited to the above example, and similar modifications as those described above for supplying the raw material gas for the heat transfer layer D for the wafer to the plasma processing space 100s can be applied.

[0214] Furthermore, the method of removing the heat transfer layer DA formed on surfaces other than the ring mounting surface 104H2 is not limited to the above example, and similar modifications as those described above for removing the heat transfer layer D formed on surfaces other than the wafer mounting surface can be applied. Furthermore, the method for removing the heat transfer layer DA formed on the ring mounting surface 104H2 is not limited to the above example, and similar modifications as those described above for removing the heat transfer layer D formed on the wafer mounting surface can be applied.

[0215] In the above example, when forming the heat transfer layer DA for the edge ring E, the edge ring E was not located inside the plasma processing chamber 100, but it may be located inside the plasma processing chamber 100. Specifically, when forming the heat transfer layer DA, the edge ring E may be located inside the plasma processing chamber 100 and separated from the ring mounting surface 104H2. More specifically, with the wafer W supported by the lifter 400 and separated from the ring mounting surface 104H2, a raw material gas may be supplied into the plasma processing chamber 100, and at least one of the raw material gases may be liquefied or solidified to form the heat transfer layer DA on the ring mounting surface 104H2.

[0216] In this case, when the heat transfer layer DA is formed on the ring mounting surface 104H2, the heat transfer layer DA formed on the upper surface of the edge ring E may be removed, for example, as follows. That is, the heat transfer layer DA formed on the upper surface of the edge ring E may be removed in the same manner as when removing the heat transfer layer D formed on the upper surface of the wafer W as explained with reference to Figure 13.

[0217] Furthermore, as in this example, when the heat transfer layer DA is formed with the edge ring E supported by the lifter 400 and separated from the ring mounting surface 104H2, a suppression part may be provided to suppress the formation of the heat transfer layer DA on the lifter 400. The suppression part is configured, for example, in the same way as the suppression part that suppresses the formation of the heat transfer layer D on the lifter 107 for the wafer W described above.

[0218] Alternatively, a heat transfer layer DA may be formed on the ring mounting surface 104H2 as follows. Specifically, first, the raw material gas supplied into the plasma processing chamber 100 may be liquefied or solidified so that a heat transfer layer DA is not formed on the ring mounting surface 104H2, but at least one of the heat transfer layer DA is formed on at least the lower surface of the edge ring E located inside the plasma processing chamber 100. Then, the edge ring E with the heat transfer layer DA formed on its lower surface may be placed on the ring mounting surface 104H2 to form a heat transfer layer D on the ring mounting surface 104H2. In this example, the control unit 80, the lifting mechanism for the edge ring E including the lifter 400, and the gas supply unit 130 can function as at least part of a heat transfer layer forming unit configured to form a heat transfer layer DA on the ring mounting surface 104H2.

[0219] The selective formation of the heat transfer layer DA on the edge ring E as described above can be achieved, for example, by pre-cooling the edge ring E before it is brought into the plasma processing chamber 100. When the edge ring E is pre-cooled in this way, the tip, or upper end, of the lifter 400 that supports the edge ring E may be formed of an insulating material.

[0220] In the above example, when removing the heat transfer layer DA for the edge ring E from the ring mounting surface 104H2 and forming the heat transfer layer DA on the ring mounting surface 104H2, the edge ring E was also replaced, but this is not necessary. If the edge ring E is not replaced, while the heat transfer layer DA is being formed on the ring mounting surface 104H2, the edge ring E may be located outside the plasma processing chamber 100, or it may be located inside the plasma processing chamber 100, supported by the lifter 400 and separated from the ring mounting surface 104H2.

[0221] (Sixth Embodiment) <Processing Module 60J> Figures 31 and 32 are longitudinal cross-sectional views illustrating the schematic configuration of a processing module as a plasma processing apparatus according to the sixth embodiment. Note that Figures 31 and 32 show different cross-sectional views of the wafer support base 101J.

[0222] In this embodiment, similar to the second embodiment, a heat transfer layer D is formed on the wafer support using a heat transfer medium composed of at least one of a liquid medium or a fluid solid medium. However, in the second embodiment, the wafer W was the target of temperature adjustment via the wafer support and the heat transfer layer D, whereas in this embodiment, not only the wafer W but also the edge ring E is the target of temperature adjustment. Therefore, the processing module according to this embodiment differs from the processing module according to the second embodiment mainly in the configuration of the wafer support. The following will mainly explain these differences.

[0223] The wafer support base 101J of the processing module 60J in Figures 31 and 32 includes, for example, a lower electrode 103J, an electrostatic chuck 104J, an insulator 105J, and legs 106, and is provided with a lifter 107 and a lifter 400.

[0224] The electrostatic chuck 104J is provided with electrodes 109 and 401, similar to the electrostatic chuck 104H in Figure 25. In the processing module 60J, the through hole 403 through which the lifter 400 is inserted is formed to penetrate, for example, the peripheral edge of the electrostatic chuck 104J, the lower electrode 103J, and the insulator 105J.

[0225] Furthermore, as shown in Figure 32, a heat transfer medium supply port 500 is formed on the ring mounting surface 104J2 of the electrostatic chuck 104J of the wafer support base 101J. For example, multiple supply ports 500 are provided on the ring mounting surface 104J2. A groove 501 may be provided on the ring mounting surface 104J2. The groove 501 is formed so that the heat transfer medium spreads along the ring mounting surface 104J2 through the groove 501.

[0226] Furthermore, a flow channel 502 is provided inside the wafer support base 101J, with one end of the flow channel 502 having fluid communication with each supply port 500. The other end of the flow channel 502 is fluidly connected to, for example, a gas supply unit 510. The flow channel 502 is formed to be narrow at the end on the ring mounting surface 104J2 side (specifically, for example, the part located inside the electrostatic chuck 104J), so that the heat transfer medium in the flow channel 502 is supplied to the ring mounting surface 104J2 via the supply port 500 by capillary action. The flow channel 502 is formed to span, for example, the electrostatic chuck 104J, the lower electrode 103J, and the insulator 105J.

[0227] The gas supply unit 510 may include one or more gas sources 511 and one or more flow controllers 512. In one embodiment, the gas supply unit 510 is configured to supply, for example, one or more heat transfer medium generating gases to the wafer support base 101J from the corresponding gas sources 511 via the corresponding flow controllers 512. Each flow controller 512 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 510 may include one or more flow modulation devices that modulate or pulse the flow rate of one or more heat transfer medium generating gases.

[0228] The heat transfer medium generation gas supplied from the gas supply unit 510 is cooled in the flow path 502 by, for example, the lower electrode 103J cooled by the temperature control fluid in the flow path 108, liquefies or solidifies, and changes into a heat transfer medium composed of at least one of a liquid medium or a solid medium having fluidity. As described above, the heat transfer medium is supplied, for example, by capillary action, through the supply port 500, to the ring placement surface 104J2, and forms the heat transfer layer DA for the edge ring E. Therefore, the gas supply unit 510 can function as at least a part of a heat transfer layer forming unit configured to form the heat transfer layer DA on the ring placement surface 104J2.

[0229] <Wafer processing of the processing module 60J> Next, an example of wafer processing including the process of replacing the edge ring E performed using the processing module 60J will be described with reference to FIGS. 33 to 36. FIG. 33 is a flowchart for explaining an example of the above wafer processing. FIGS. 34 to 36 are diagrams showing the state of the processing module 60J during the above wafer processing. Note that the following processing is performed under the control of the control unit 80.

[0230] For example, first, as shown in FIGS. 33 and 34, the edge ring E is placed on the ring placement surface 104J2 of the wafer support base 101J (step S31). Specifically, the edge ring E is carried into the plasma processing chamber 100 by the transfer mechanism 70 and placed on the ring placement surface 104J2 of the electrostatic chuck 104J by the lifting and lowering of the lifter 400. Thereafter, the inside of the plasma processing chamber 100 is decompressed by the exhaust system 150 to a predetermined degree of vacuum (pressure p11).

[0231] Subsequently, as shown in FIG. 35, a heat transfer medium composed of at least one of a liquid medium or a solid medium having fluidity is supplied between the ring placement surface 104J2 and the back surface of the edge ring E through the wafer support base 101J, and the heat transfer layer DA is formed (step S32).

[0232] Specifically, the edge ring E is held by the wafer support base 101J. For example, a DC voltage is applied to the electrode 401 of the electrostatic chuck 104J, and the edge ring E is electrostatically adsorbed to the electrostatic chuck 104J by electrostatic force. At this time, the temperature of the ring placement surface 104J2 is adjusted to the temperature T11, and accordingly, the inside of the flow path 502 is also adjusted to the temperature T11. The temperature T11 is set to a temperature at which the process treatment can be effectively carried out, and for example, it is made equal to the temperature of the ring placement surface 104J2 during the process treatment.

[0233] After the edge ring E is held on the wafer support base 101J, a heat transfer medium generating gas is supplied from the gas supply unit 510 to the flow path 502 of the wafer support base 101J at a temperature T12 (>T11) and a pressure p12 (>p11). The heat transfer medium generating gas supplied to the flow path 502 is cooled to the temperature T11 in the flow path 502 and becomes a heat transfer medium composed of at least one of a liquid medium or a solid medium having fluidity. Then, this heat transfer medium is supplied to the ring placement surface 104J2 through the supply port 500, for example, by capillary action. The heat transfer medium supplied to the ring placement surface 104J2 spreads along the ring placement surface 104J2 due to capillary action in the gap between the ring placement surface 104J2 and the back surface of the edge ring E, and a heat transfer layer DA is formed.

[0234] Note that by providing the groove 501 in the ring placement surface 104J2 as described above, the gap between the ring placement surface 104J2 and the back surface of the edge ring E can be widened, and the above heat transfer medium can be appropriately spread along the ring placement surface 104J2 by capillary action. Also, the pressure p13 applied to the heat transfer layer DA is 0.1 Torr to 100 Torr, including the pressure applied to the heat transfer layer DA by electrostatically adsorbing the edge ring E.

[0235] The supply of the heat transfer medium to the ring mounting surface 104J2 (specifically, the supply of the gas for generating the heat transfer medium from the gas supply unit 510) is stopped, for example, when the supply amount reaches a predetermined amount (specifically, when the supply time of the gas for generating the heat transfer medium from the gas supply unit 510 exceeds a predetermined time). Alternatively, for example, monitoring means such as a camera may be used to monitor for leakage of the heat transfer medium from between the ring mounting surface 104J2 and the back surface of the edge ring E, and the supply of the heat transfer medium to the ring mounting surface 104J2 may be stopped when leakage is detected.

[0236] Then, plasma treatment is performed on the wafer W on the upper surface, i.e., the mounting surface, of the electrostatic chuck 104 on which the heat transfer layer DA is formed (step S33). Specifically, the plasma treatment is performed in the same manner as the process described using Figure 3, for example. More specifically, for example, a wafer W is placed on the wafer mounting surface 1041 of the wafer support base 101J, a heat transfer layer D is formed between the wafer mounting surface 1041 and the back surface of the wafer W, and then the wafer W is subjected to plasma treatment. After that, the heat transfer layer D is vaporized and removed, and the wafer W is removed.

[0237] During plasma processing, the ring mounting surface 104J2 is adjusted to a predetermined temperature T11 by a temperature-controlled fluid flowing through the channel 108 to control the temperature of the edge ring E. Furthermore, during plasma processing, the edge ring E is mounted on the ring mounting surface 104J2 via a heat transfer layer DA, and since the heat transfer layer DA is deformable, the lower surface, i.e., the back surface, of the edge ring E is in close contact with the heat transfer layer DA. The heat transfer layer DA is formed from a heat transfer medium, and since this heat transfer medium is composed of at least one of a liquid medium or a fluid solid medium, it has higher thermal conductivity than a heat transfer gas such as He. Therefore, when using the heat transfer layer DA, the temperature of the edge ring E can be adjusted more efficiently via the ring mounting surface 104J2 compared to when a heat transfer gas such as He is flowed between the ring mounting surface 104J2 and the back surface of the edge ring E. Specifically, even if there is a large amount of heat input from the plasma P to the edge ring E during plasma processing, the temperature of the edge ring E can be kept constant via the temperature control of the ring mounting surface 104J2. Furthermore, if the set temperature of the edge ring E is changed during plasma processing, the temperature of the edge ring E can be immediately changed to the new set temperature via the temperature control of the ring mounting surface 104J2.

[0238] Furthermore, even during plasma processing, a DC voltage is applied to the electrode 401 of the electrostatic chuck 104J, thereby electrostatically attracting and holding the edge ring E to the electrostatic chuck 104J. Alternatively, the degree of contact of the edge ring E with the wafer support base 101J may be controlled by electrostatic force, thereby controlling the heat dissipation from the edge ring E by the wafer support base 101J.

[0239] After plasma treatment of the wafer W, the edge ring E is separated from the ring mounting surface 104J2, and the heat transfer layer DA is vaporized and removed (step S34). In one example, the heat transfer layer DA is removed by vaporization. Separation of the edge ring E from the ring mounting surface 104J2, i.e., removal of the edge ring E, does not need to be performed after each plasma treatment of the wafer W, but is performed, for example, when the edge ring E is worn out or when the heat transfer layer DA is damaged or worn out by the plasma.

[0240] In step S34, specifically, after the retention of the edge ring E on the wafer support 101J, i.e., the adsorption retention of the edge ring E by the electrostatic chuck 104J, is stopped, the edge ring E is raised by the lifter 400 and separated from the ring mounting surface 104J2, as shown in Figure 36. Once separated, the heat transfer layer DA is exposed to a reduced pressure atmosphere, specifically to an atmosphere with a pressure p11 of less than 0.001 Torr, which causes it to vaporize and be removed. Furthermore, to remove the heat transfer layer DA from the ring mounting surface 104J2, at least one of plasma, heat, or light may be used instead of, or in combination with, exposure to a reduced pressure atmosphere.

[0241] Furthermore, the gas used to generate the heat transfer medium for heat transfer layer DA may be the same as or different from the gas used for heat transfer layer D.

[0242] Then, the edge ring E is removed (step S35). Specifically, the edge ring E is transferred from the lifter 400 to the transport mechanism 70, and then discharged from the plasma processing chamber 100 by the transport mechanism 70. Subsequently, the process returns to step S31, and step S32 is performed, during which the new edge ring E is placed on the ring mounting surface 104J2, and a heat transfer layer DA is formed on the ring mounting surface 104J2.

[0243] <Effects, etc.> As described above, in this embodiment, a heat transfer medium, composed of at least one of a liquid medium or a fluid solid medium, is supplied between the ring mounting surface 104J2 and the back surface of the edge ring E via the wafer support base 101J to form a heat transfer layer DA. Therefore, in this embodiment, for the same reasons as in the second embodiment, the temperature of the edge ring E can be efficiently adjusted via the ring mounting surface 104J2 during plasma processing. Furthermore, clogging of the flow path 502 by the heat transfer medium can be suppressed. In addition, since there is no need to provide a separate step for removing the heat transfer layer DA, throughput can be improved.

[0244] <Modified form of the sixth embodiment> In this embodiment as well, similar to the modified example of the fifth embodiment described above, only the edge ring E of the wafer W and edge ring E may be subject to temperature control via the wafer support base 101J and heat transfer layer D. Specifically, the processing module 60J in the example of Figures 31 and 32 was provided with both a configuration such as a flow channel 502 for forming the heat transfer layer DA for the edge ring E and a configuration such as a flow channel 310 for forming the heat transfer layer D for the wafer W, but the latter configuration may be omitted.

[0245] Furthermore, in this embodiment as well, similar to the modified example of the fifth embodiment described above, the timing for forming the heat transfer layer D for the wafer W may be the same as the timing for forming the heat transfer layer DA for the edge ring E.

[0246] Furthermore, the supply method of the heat transfer medium for forming the heat transfer layer DA for the edge ring E is not limited to the above example, and similar modifications as those for forming the heat transfer layer D for the wafer W described above can be applied.

[0247] Furthermore, the heat transfer medium for forming the heat transfer layer DA for the edge ring E is not limited to the example described above, and similar modified versions as those used for forming the heat transfer layer D for the wafer W can be applied.

[0248] Furthermore, a specific example similar to that of the groove 320 for forming the heat transfer layer D for the wafer described above can be applied to the groove 501 for forming the heat transfer layer DA for the edge ring E.

[0249] Furthermore, the ring mounting surface, like the wafer mounting surface, may be made of a porous material in portions other than the groove 501 (specifically, for example, the top of the support column provided within the groove 501). If the ring mounting surface does not have a groove 501, the entire surface of the ring mounting surface may be made of a porous material.

[0250] When the groove 501 is not formed on the ring placement surface 104J2 and the entire surface is formed of a porous body, the thickness of the porous body may be varied for each region on the ring placement surface 104J2.

[0251] Furthermore, the heat transfer layer DA for the edge ring E is formed by mixing a high thermal conductivity conductive medium and a low thermal conductivity conductive medium, and the mixing ratio of the high thermal conductivity conductive medium and the low thermal conductivity conductive medium may be varied for each region on the ring placement surface 104J2.

[0252] Also, the density of the groove 501 may be varied for each region on the ring placement surface 104J2.

[0253] In the above example, when removing the heat transfer layer DA for the edge ring E from the ring placement surface 104J2 and forming the heat transfer layer DA on the ring placement surface 104J2, the edge ring E was also replaced, but it does not have to be done. When the edge ring E is not replaced, the edge ring E supported by the lifter 400 and separated from the ring placement surface 104J2 for removing the heat transfer layer DA may be once carried out of the plasma processing chamber 100 and then re-carried into the plasma processing chamber 100, or may be placed again on the ring placement surface 104J2 without being carried out.

[0254] <Modifications of the Fifth and Sixth Embodiments> In the above example, as a fixing part for holding or fixing the edge ring E with respect to the ring placement surface, an electrostatic chuck that is adsorbed and held by an electrostatic force generated by applying a DC voltage to the internal electrode 401 was used. The electrical fixing part is not limited to those held by electrostatic force, and may be those held by the Johnson-Lambeck force. The above fixing part is not limited to being electrically held as described above. For example, the above fixing part may be a physical fixing such as a clamp. Note that the above fixing part may be omitted.

[0255] Furthermore, in the above example, the edge ring E was housed in a storage module 62 connected to the transfer module 50, but like the wafer W, it may also be housed in a hoop placed on the load port 32.

[0256] In addition, a covering ring may be placed on the wafer support base of the processing module that performs plasma processing, so as to cover the outer surface of the edge ring. In this case, a heat transfer layer may be formed on the mounting surface on the wafer support base where the covering ring is placed, similar to the heat transfer layer DA for the edge ring E described above.

[0257] (Other variations) The methods for removing the heat transfer layers formed on each part, as described above, may be combined. For example, when removing a heat transfer layer formed on a surface other than the wafer mounting surface, two or more of the following methods may be combined: using plasma, heating, irradiating with light, and reducing the pressure inside the plasma processing chamber 100 with the wafer W placed on it.

[0258] In the examples above, plasma etching was performed as the plasma treatment, but the technology of this disclosure can also be applied when a treatment other than etching (for example, a film deposition treatment) is performed as the plasma treatment.

[0259] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the constituent elements of the embodiments described above can be combined in any way. Such any combination will naturally yield the functions and effects of each constituent element in the combination, as well as other functions and effects that will be apparent to those skilled in the art from the description herein.

[0260] Furthermore, the effects described herein are merely descriptive or illustrative and not limiting. In other words, the technology relating to this disclosure may produce other effects that will be apparent to those skilled in the art from the description herein, in addition to or instead of the effects described herein.

[0261] Furthermore, the following configuration examples also fall within the technical scope of this disclosure. (1) A processing method for performing plasma treatment on a substrate, A step of placing the object to be temperature-controlled on the mounting surface of the substrate support part inside a processing container configured to allow for reduced pressure, A step of forming a deformable heat transfer layer for the temperature-controlled object on the aforementioned mounting surface of the substrate support portion, which is composed of at least one of a liquid layer or a deformable solid layer. A processing method comprising the step of performing plasma treatment on a substrate on the aforementioned surface on which the heat transfer layer is formed. (2) The processing method according to (1), wherein the forming step includes supplying a raw material gas to be used as a raw material for the heat transfer layer into the processing space in the processing container. (3) The processing container has walls that define the processing space, The process of supplying the raw material gas is the processing method according to (2) above, wherein the raw material gas is supplied through the wall. (4) The process of supplying the raw material gas, wherein the process of supplying the raw material gas is carried out by supplying the raw material gas through the substrate support portion, as described in (2) or (3). (5) The processing method according to any one of (2) to (4) above, wherein the step of supplying the raw material gas is to supply the raw material gas to the processing container via a conveying device that conveys the substrate. (6) The processing method according to any one of (2) to (5) above, wherein the step of forming is to form the heat transfer layer from the raw material gas using plasma. (7) The processing method according to any one of (2) to (5), wherein the step of forming the heat transfer layer is to perform at least one of liquefaction or solidification of the raw material gas by the cooled surface described above to form the heat transfer layer. (8) The processing method according to (1), wherein the step of forming comprises supplying a heat transfer medium, which is composed of at least one of a liquid medium or a fluid solid medium, to the surface described above via the substrate support portion, and forming the heat transfer layer. (9) The processing method according to any one of (1) to (8), wherein the step of forming is to place the temperature-controlled object, on which the heat transfer layer has been formed on the lower surface in the step of placing, on the placing surface, thereby forming the heat transfer layer on the placing surface. (10) The processing method according to any one of (1) to (9), wherein the step of forming the heat transfer layer is formed on the aforementioned surface while the temperature-controlled object is located inside the processing container and separated from the aforementioned surface. (11) The forming step is the processing method according to any one of (1) to (8) or (10) above, which is performed before the setting step described above. (12) The forming step is the processing method described in (1) or (8) above, which is performed after the setting step described above. (13) The processing method according to any one of (1) to (12), further comprising the step of removing the heat transfer layer formed in the above-mentioned step from a portion of the processing container other than the surface described above. (14) The processing method according to any one of (1) to (13), further comprising the step of removing the heat transfer layer from the surface described above after the step of performing the plasma processing. (15) The process of removing the heat transfer layer from the surface described above, wherein the heat transfer layer is vaporized by heating the surface described above, as described in (14). (16) The process of removing the heat transfer layer from the surface described above is the processing method described in (14), wherein the heat transfer layer is removed using plasma. (17) The processing method according to any one of (1) to (16), comprising the step of adsorbing and holding the object to be temperature-controlled on the aforementioned surface by electrostatic force from an electrostatic chuck. (18) The processing method according to any one of (1) to (17), wherein the temperature-controlled object is at least one of a substrate or an edge ring arranged to surround a substrate placed on the aforementioned mounting surface. (19) A plasma processing apparatus, A processing vessel configured to allow for reduced pressure, A substrate support section is provided within the processing container and has a mounting surface on which the substrate is placed, A heat transfer layer forming section is provided on the aforementioned mounting surface of the substrate support section, which is composed of at least one of a liquid layer or a deformable solid layer and is deformable, and which forms a heat transfer layer for the object to be temperature controlled. It comprises a control unit and, The control unit, The steps include: placing the object to be temperature-controlled on the mounting surface; A plasma processing apparatus that controls the process of performing a plasma treatment on a substrate on the aforementioned surface on which the heat transfer layer is formed. (20) The plasma processing apparatus according to (19), wherein the heat transfer layer forming section supplies a raw material gas that is the raw material for the heat transfer layer to the processing space in the processing container. (21) The plasma apparatus according to (19) or (20), wherein the heat transfer layer forming section supplies a heat transfer medium, which is composed of at least one of a liquid medium or a fluid solid medium, to the surface described above via the substrate support section, and forms the heat transfer layer. (22) The plasma processing apparatus according to any one of (19) to (21), wherein the heat transfer layer forming section is formed on the mounting surface by placing the temperature-controlled object on which the heat transfer layer is formed on the lower surface. (23) The plasma processing apparatus according to any one of (19) to (22), wherein the heat transfer layer forming section forms the heat transfer layer on the aforementioned surface when the temperature-controlled object is located inside the processing container and separated from the aforementioned surface. (24) The plasma processing apparatus according to any one of (19) to (23), wherein the temperature-controlled object is at least one of a substrate or an edge ring arranged to surround a substrate placed on the aforementioned mounting surface. (25) The substrate support portion has an electrostatic chuck, The plasma processing apparatus according to any one of (19) to (24), wherein the control unit controls the process of adsorbing and holding the object to be temperature-controlled on the aforementioned surface by electrostatic force from the electrostatic chuck. [Explanation of symbols]

[0262] 60, 60E, 60F, 60G, 60H, 60J processing modules 80 Control Unit 100, 100A Plasma Processing Chamber 100s Plasma Processing Space 101, 101B, 101E, 101H, 101J Wafer support base 1041, 104B1, 104E1 wafer mounting surfaces 104H2, 104H2 ring mounting surface 107C Lifter 400 Lifter 130, 130A, 130B, 130E, 510 Gas Supply Unit D, DA heat transfer layer E Edge Ring W wafer

Claims

1. A processing method for performing plasma treatment on a substrate, A step of placing the object to be temperature-controlled on the mounting surface of the substrate support part inside a processing container configured to allow for reduced pressure, A step of forming a deformable heat transfer layer for the temperature-controlled object on the aforementioned mounting surface of the substrate support portion, which is composed of at least one of a liquid layer or a deformable solid layer. The process includes performing plasma treatment on a substrate on the aforementioned surface on which the heat transfer layer is formed, The processing method comprising the step of supplying a raw material gas, which is the raw material for the heat transfer layer, to the processing space in the processing container.

2. The processing container has walls that define the processing space, The processing method according to claim 1, wherein the step of supplying the raw material gas is to supply the raw material gas through the wall.

3. The aforementioned wall is an upper electrode positioned above the substrate support portion, The upper electrode has a gas inlet for introducing the raw material gas into the processing space, The processing method according to claim 2, wherein the step of supplying the raw material gas is to supply the raw material gas through the gas inlet.

4. The processing method according to claim 1, wherein the step of supplying the raw material gas is to supply the raw material gas via the substrate support portion.

5. The processing method according to claim 1, wherein the step of supplying the raw material gas is to supply the raw material gas to the processing container via a conveying device that conveys substrates.

6. The processing method according to any one of claims 1 to 5, wherein the step of forming the heat transfer layer is performed by using plasma to form the heat transfer layer from the raw material gas.

7. The processing method according to any one of claims 1 to 5, wherein the step of forming the heat transfer layer is formed from the raw material gas by irradiating it with light.

8. The processing method according to any one of claims 1 to 5, wherein the step of forming the heat transfer layer is to perform at least one of liquefaction or solidification of the raw material gas by the cooled surface described above.

9. The processing method according to any one of claims 1 to 5, wherein the step of forming is to place the temperature-controlled object, on which the heat transfer layer has been formed on the lower surface in the step of placing it, on the placing surface, thereby forming the heat transfer layer on the placing surface.

10. The processing method according to any one of claims 1 to 5, wherein the step of forming the heat transfer layer is formed on the aforementioned surface while the temperature-controlled object is located inside the processing container and separated from the aforementioned surface.

11. The processing method according to any one of claims 1 to 5, wherein the forming step is performed before the setting step described above.

12. A processing method for performing plasma treatment on a substrate, A step of placing the object to be temperature-controlled on the mounting surface of the substrate support part inside a processing container configured to allow for reduced pressure, A step of forming a deformable heat transfer layer for the temperature-controlled object on the aforementioned mounting surface of the substrate support portion, which is composed of at least one of a liquid layer or a deformable solid layer. The process includes performing plasma treatment on a substrate on the aforementioned surface on which the heat transfer layer is formed, The forming step is a processing method performed after the setting step described above.

13. The processing method according to any one of claims 1 to 5, 12, further comprising the step of removing the heat transfer layer formed in the above-mentioned step from a portion of the processing container other than the aforementioned surface.

14. The processing method according to any one of claims 1 to 5, 12, further comprising the step of removing the heat transfer layer from the surface described above after the step of performing the plasma processing.

15. The processing method according to claim 14, wherein the step of removing the heat transfer layer from the aforementioned surface is to vaporize the heat transfer layer by heating the aforementioned surface.

16. The processing method according to claim 14, wherein the step of removing the heat transfer layer from the aforementioned surface is to remove the heat transfer layer using plasma.

17. The processing method according to claim 14, wherein the step of removing the heat transfer layer from the aforementioned mounting surface is to remove the heat transfer layer by irradiating it with light.

18. The processing method according to any one of claims 1 to 5, 12, further comprising the step of adsorbing and holding the object to be temperature-controlled on the aforementioned surface by electrostatic force from an electrostatic chuck.

19. The processing method according to any one of claims 1 to 5, 12, wherein the temperature-controlled object is at least one of a substrate, a tray, and an edge ring arranged to surround a substrate placed on the aforementioned surface.

20. A processing method for performing plasma treatment on a substrate, A step of placing the object to be temperature-controlled on the mounting surface of the substrate support part inside a processing container configured to allow for reduced pressure, A step of forming a deformable heat transfer layer for the temperature-controlled object on the aforementioned mounting surface of the substrate support portion, which is composed of at least one of a liquid layer or a deformable solid layer. The process includes performing plasma treatment on a substrate on the aforementioned surface on which the heat transfer layer is formed, The process of forming the heat transfer layer is a processing method in which the temperature-controlled object is located inside the processing container and separated from the aforementioned surface, and the heat transfer layer is formed on the aforementioned surface.

21. A processing method for performing plasma treatment on a substrate, A step of placing the object to be temperature-controlled on the mounting surface of the substrate support part inside a processing container configured to allow for reduced pressure, A step of forming a deformable heat transfer layer for the temperature-controlled object on the aforementioned mounting surface of the substrate support portion, which is composed of at least one of a liquid layer or a deformable solid layer. A step of performing plasma treatment on a substrate on the aforementioned surface on which the heat transfer layer is formed, The process includes removing the heat transfer layer from the aforementioned mounting surface after the plasma treatment process, The step of removing the heat transfer layer from the aforementioned surface is a processing method in which the heat transfer layer is vaporized by heating the aforementioned surface.

22. A processing method for performing plasma treatment on a substrate, A step of placing the object to be temperature-controlled on the mounting surface of the substrate support part inside a processing container configured to allow for reduced pressure, A step of forming a deformable heat transfer layer for the temperature-controlled object on the aforementioned mounting surface of the substrate support portion, which is composed of at least one of a liquid layer or a deformable solid layer. A step of performing plasma treatment on a substrate on the aforementioned surface on which the heat transfer layer is formed, The process includes removing the heat transfer layer from the aforementioned mounting surface after the plasma treatment process, The step of removing the heat transfer layer from the aforementioned mounting surface is a processing method that removes the heat transfer layer using plasma.

23. A plasma processing apparatus, A processing vessel configured to allow for reduced pressure, A substrate support section is provided within the processing container and has a mounting surface on which the substrate is placed, A heat transfer layer forming section is provided on the aforementioned mounting surface of the substrate support section, which is composed of at least one of a liquid layer or a deformable solid layer and is deformable, and which forms a heat transfer layer for the object to be temperature controlled. It comprises a control unit and, The control unit, The steps include: placing the object to be temperature-controlled on the mounting surface; The control is set to perform the step of performing plasma treatment on the substrate on the aforementioned surface on which the heat transfer layer is formed, The heat transfer layer forming section is a plasma processing apparatus that supplies a raw material gas, which is the raw material for the heat transfer layer, to the processing space within the processing container.

24. The plasma processing apparatus according to claim 23, wherein the heat transfer layer forming section forms the heat transfer layer on the aforementioned mounting surface by placing the temperature-controlled object, on which the heat transfer layer is formed on the lower surface.

25. The plasma processing apparatus according to claim 23 or 24, wherein the heat transfer layer forming section forms the heat transfer layer on the aforementioned surface while the temperature-controlled object is located inside the processing container and separated from the aforementioned surface.

26. The plasma processing apparatus according to claim 23 or 24, wherein the temperature-controlled object is at least one of a substrate, a tray, or an edge ring arranged to surround a substrate placed on the aforementioned surface.

27. The substrate support portion has an electrostatic chuck, The plasma processing apparatus according to claim 23 or 24, wherein the control unit controls the process of adsorbing and holding the object to be temperature-controlled on the aforementioned surface by electrostatic force from the electrostatic chuck.

28. The heat transfer layer forming section includes a gas supply section for supplying the raw material gas, The processing container has walls that define the processing space, The plasma processing apparatus according to claim 23 or 24, wherein the wall has a gas inlet connected to the gas supply unit.

29. The plasma processing apparatus according to claim 28, wherein the wall is an upper electrode positioned above the substrate support portion.

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