Processing method and plasma processing apparatus

Abstract

Efficiently adjusts the temperature of the object being processed during plasma treatment. [Solution] A processing method for performing plasma processing on a substrate, comprising the steps of: placing a temperature-controlled object on a mounting surface of a substrate support in a processing container configured to be able to reduce pressure; supplying a heat transfer medium, composed of at least one of a liquid medium or a fluid solid medium, between the mounting surface of the substrate support and the back surface of the temperature-controlled object via the substrate support to form a heat transfer layer; performing plasma processing on the substrate on the mounting surface on which the heat transfer layer has been formed; and separating the temperature-controlled object from the mounting surface after the plasma processing.

Description

Technical Field

[0001] The present disclosure relates to a processing method and a plasma processing apparatus.

Background Art

[0002] Patent Document 1 discloses a substrate processing apparatus including a mounting table having a mounting surface on which a substrate is mounted and provided with a gas supply pipe for supplying a heat transfer gas into a gap between the substrate and the mounting surface.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The technology according to the present disclosure efficiently adjusts the temperature of a temperature adjustment object during plasma processing.

Means for Solving the Problems

[0005] One aspect of the present disclosure is a processing method for performing plasma processing on a substrate, including a step of mounting a temperature adjustment object on a mounting surface of a substrate support portion in a processing container configured to be depressurized, a step of supplying a heat transfer medium composed of at least one of a liquid medium or a solid medium having fluidity between the mounting surface of the substrate support portion and the back surface of the temperature adjustment object through the substrate support portion to form a heat transfer layer, a step of performing plasma processing on the substrate on the mounting surface on which the heat transfer layer is formed, and a step of separating the temperature adjustment object from the mounting surface after the plasma processing, wherein the forming step includes a step of supplying a gas for generating a heat transfer medium into the substrate support portion, cooling the gas in the substrate support portion, and changing it into the heat transfer medium.

Effects of the Invention

[0006] According to this disclosure, the temperature of the object to be temperature-controlled can be efficiently adjusted during plasma processing. [Brief explanation of the drawing]

[0007] [Figure 1] This is a longitudinal cross-sectional view showing a schematic configuration of a processing module as a plasma processing apparatus according to the first embodiment. [Figure 2] This is a longitudinal cross-sectional view showing a schematic configuration of a processing module as a plasma processing apparatus according to the first embodiment. [Figure 3] This flowchart illustrates an example of wafer processing performed using the processing modules shown in Figures 1 and 2. [Figure 4] Figures 1 and 2 show the state of the processing module during wafer processing. [Figure 5] Figures 1 and 2 show the state of the processing module during wafer processing. [Figure 6] Figures 1 and 2 show the state of the processing module during wafer processing. [Figure 7] Figures 1 and 2 show the state of the processing module during wafer processing. [Figure 8] This is a diagram illustrating another example of a heat transfer medium supply configuration. [Figure 9] This diagram shows specific examples of grooves. [Figure 10] This diagram shows specific examples of grooves. [Figure 11] This is a plan view illustrating the schematic configuration of a plasma processing system including a processing module as a plasma processing apparatus according to the second embodiment. [Figure 12] This is a longitudinal cross-sectional view showing a schematic configuration of a processing module as a plasma processing apparatus according to the second embodiment. [Figure 13] This is a longitudinal cross-sectional view showing a schematic configuration of a processing module as a plasma processing apparatus according to the second embodiment. [Figure 14] This flowchart illustrates an example of wafer processing performed using the processing modules shown in Figures 12 and 13. [Figure 15] FIG. 12 and FIG. 13 are diagrams showing the states of the processing modules during wafer processing. [Figure 16] FIG. 12 and FIG. 13 are diagrams showing the states of the processing modules during wafer processing. [Figure 17] FIG. 12 and FIG. 13 are diagrams showing the states of the processing modules during wafer processing.

Embodiments for Carrying Out the Invention

[0008] In the manufacturing process of semiconductor devices and the like, plasma processing such as etching and film formation is performed on a substrate such as a semiconductor wafer (hereinafter referred to as "wafer") using plasma. The plasma processing is performed in a state where the substrate is placed on a substrate support table in a reduced-pressure processing container.

[0009] In addition, in order to obtain good and uniform plasma processing results between the central portion and the peripheral portion of the substrate, an annular member in plan view, that is, an edge ring, may be placed on the substrate support table so as to surround the periphery of the substrate on the substrate support table.

[0010] By the way, since the result of plasma processing depends on the temperature of the substrate, during plasma processing, the temperature of the substrate support table is adjusted, and the temperature of the substrate is adjusted through this substrate support table. When using the above-mentioned edge ring, since the temperature of the edge ring affects the plasma processing result of the peripheral portion of the substrate, the temperature adjustment of the edge ring is also important. The temperature of the edge ring is also adjusted through the substrate support table. Conventionally, a heat transfer gas such as He gas is supplied between the substrate support table and the substrate and the edge ring so that the temperatures of the substrate and the edge ring are efficiently adjusted through the substrate support table.

[0011] However, when the heat input from the plasma during plasma processing is large, etc., even when using the heat transfer gas as described above, it may not be possible to sufficiently adjust the temperature of at least one of the substrate or the edge ring.

[0012] Therefore, the technology according to the present disclosure efficiently adjusts the temperature of a temperature adjustment target object, which is at least one of a substrate or an edge ring, during plasma processing.

[0013] Hereinafter, the processing method and the plasma processing apparatus according to the present embodiment will be described with reference to the drawings. In the present specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.

[0014] (First Embodiment) <Processing Module> FIG. 1 and FIG. 2 are longitudinal cross-sectional views showing an outline of the configuration of a processing module as a plasma processing apparatus according to the first embodiment. In FIG. 1 and FIG. 2, different portions of a wafer support base described later are shown in cross-section.

[0015] A processing module 1 in FIGS. 1 and 2 performs plasma processing such as etching or film formation on a wafer W as a substrate. The processing module 1 includes a plasma processing chamber 100 as a processing container, gas supply units 120 and 130, an RF (Radio Frequency) power supply unit 140, and an exhaust system 150. Further, the processing module 1 includes a wafer support base 101 as a substrate support unit and an upper electrode 102.

[0016] The wafer support base 101 is disposed in a lower region of a plasma processing space 100s in the plasma processing chamber 100 configured to be depressurized. The upper electrode 102 is disposed above the wafer support base 101. Also, the upper electrode 102 can function as a part of the ceiling of the plasma processing chamber 100.

[0017] The wafer support base 101 is configured to support the wafer W in the plasma processing space 100s. In one embodiment, the wafer support base 101 includes a lower electrode 103, an electrostatic chuck 104, an insulator 105, and legs 106, and is provided with a lifter 107. The wafer support base 101 also includes a temperature control unit configured to adjust the temperature of the electrostatic chuck 104 (for example, the temperature of the upper surface 1041 of its central part). The temperature control unit includes, for example, a heater, a flow path, or a combination thereof. A temperature-controlled fluid, such as a refrigerant or heat transfer gas, flows through the flow path.

[0018] The lower electrode 103 is made of a conductive material such as aluminum and is fixed to the insulator 105. In one embodiment, a flow path 108 for the temperature-controlled fluid, which constitutes part of the temperature control section, is formed inside the lower electrode 103. The temperature-controlled fluid is supplied to the flow path 108 from a chiller unit (not shown) located outside the plasma processing chamber 100. The temperature-controlled fluid supplied to the flow path 108 is returned to the chiller unit. For example, by circulating low-temperature brine as the temperature-controlled fluid in the flow path 108, the electrostatic chuck 104, the wafer W placed on the electrostatic chuck 104, and the edge ring E can be cooled to a predetermined temperature. Alternatively, for example, by circulating high-temperature brine as the temperature-controlled fluid in the flow path 108, the electrostatic chuck 104, the wafer W placed on the electrostatic chuck 104, and the edge ring E can be heated to a predetermined temperature.

[0019] The electrostatic chuck 104 is a component configured to hold a wafer W by electrostatic force and is provided on the lower electrode 103. In one embodiment, the upper surface of the central part of the electrostatic chuck 104 is higher than the upper surface of the peripheral part. The upper surface 1041 of the central part of the electrostatic chuck 104 becomes the wafer mounting surface on which the wafer W is placed, and the upper surface 1042 of the peripheral part of the electrostatic chuck 104 becomes the ring mounting surface on which the edge ring E is placed. The edge ring E is an annular component in plan view, arranged to surround the wafer W placed on the upper surface 1041 of the central part of the electrostatic chuck 104 and adjacent to the wafer W.

[0020] This electrostatic chuck 104 is an example of a fixing part that secures the wafer W to the upper surface 1041, i.e., the wafer mounting surface, of the central part of the electrostatic chuck 104. An electrode 109 is provided in the central part of the electrostatic chuck 104.

[0021] A DC voltage from a DC power supply (not shown) is applied to the electrode 109. The resulting electrostatic force causes the wafer W to be attracted and held on the upper surface 1041 of the central part of the electrostatic chuck 104. In one embodiment, the electrostatic chuck 104 is configured to also hold the edge ring E by electrostatic force, and is provided with electrodes (not shown) for holding the edge ring E to the wafer support base 101 by electrostatic adsorption. In one embodiment, a gas supply hole (not shown) is formed on the upper surface 1042 of the peripheral edge of the electrostatic chuck 104 to supply a heat transfer gas, such as He gas, to the back surface of the edge ring E placed on the upper surface 1042. The heat transfer gas is supplied from a gas supply unit (not shown) through the gas supply hole. The gas supply unit may include one or more gas sources and one or more pressure controllers. In one embodiment, the gas supply unit is configured to supply, for example, heat transfer gas from a gas source to the gas supply hole via a pressure controller.

[0022] Furthermore, the central part of the electrostatic chuck 104 is formed to have a smaller diameter than the diameter of the wafer W, so that when the wafer W is placed on the upper surface (hereinafter referred to as the wafer mounting surface) 1041 of the central part of the electrostatic chuck 104, the peripheral edge of the wafer W protrudes from the central part of the electrostatic chuck 104. The edge ring E has, for example, a step formed on its upper surface, with the upper surface of the outer periphery higher than the upper surface of the inner periphery. The inner periphery of the edge ring E is formed to fit underneath the peripheral edge of the wafer W that protrudes from the center of the electrostatic chuck 104.

[0023] The electrostatic chuck 104 may be equipped with a heater (specifically, a resistance heating element) that constitutes part of a temperature control mechanism. By energizing the heater, the electrostatic chuck 104 and the wafer W placed on the electrostatic chuck 104 can be heated to a predetermined temperature. In this case, the electrostatic chuck 104 has a configuration in which, for example, an electrode 109 for wafer adsorption and an electrode for edge ring adsorption are sandwiched between insulating materials made of insulating material, and a heater is embedded in them. The central part of the electrostatic chuck 104, which is provided with the electrode 109 for wafer adsorption, and the peripheral part of the electrostatic chuck 104, which is provided with the electrode for edge ring adsorption, may be formed integrally or as separate parts.

[0024] The insulator 105 is a disc-shaped member made of ceramic or the like, to which the lower electrode 103 is fixed. The insulator 105 is formed to have the same diameter as the lower electrode 103, for example.

[0025] The legs 106 are cylindrical members made of ceramic or the like, and support the electrostatic chuck 104 via the lower electrode 103 and the insulator 105. The legs 106 are formed to have an outer diameter equivalent to, for example, the outer diameter of the insulator 105, and support the peripheral edge of the insulator 105.

[0026] The lifter 107 is a lifting member that moves up and down relative to the wafer mounting surface 1041 of the electrostatic chuck 104, and is formed, for example, in a columnar shape. When the lifter 107 is raised, its upper end protrudes from the wafer mounting surface 1041, making it possible to support the wafer W. This lifter 107 allows the wafer W to be transferred between the electrostatic chuck 104 and an external transport mechanism (not shown). Furthermore, three or more lifters 107 are provided, spaced apart from each other, and are arranged to extend in the vertical direction.

[0027] Each lifter 107 is connected to a support member 110 that supports the lifter 107. The support member 110 is connected to a drive unit 111 that generates a driving force to raise and lower the support member 110 and raise and lower the multiple lifters 107. The drive unit 111 has, for example, a motor (not shown) as a drive source to generate the driving force.

[0028] The lifter 107 is inserted through a through hole 112, the upper end of which opens into the wafer mounting surface 1041 of the electrostatic chuck 104. The through hole 112 is formed to penetrate, for example, the central part of the electrostatic chuck 104, the lower electrode 103, and the insulator 105. The lifter 107, support member 110, and drive unit 111 constitute a lifting mechanism that raises and lowers the wafer W relative to the wafer mounting surface 1041.

[0029] In this embodiment, as will be described later, a heat transfer medium, which is composed of at least one of a liquid medium or a fluid solid medium, is supplied to the wafer mounting surface 1041 via the wafer support base 101, and a heat transfer layer D is formed from the heat transfer medium.

[0030] Therefore, as shown in Figure 2, a heat transfer medium supply port 113 is formed on the wafer mounting surface 1041 of the electrostatic chuck 104 of the wafer support base 101. For example, multiple supply ports 113 are provided on the wafer mounting surface 1041. A groove 114 may be provided on the wafer mounting surface 1041. The groove 114 is formed so that the heat transfer medium spreads along the wafer mounting surface 1041 through the groove 114.

[0031] Furthermore, a flow channel 115 is provided inside the wafer support base 101, with one end of the flow channel 115 in fluid communication with each supply port 113. The other end of the flow channel 115 is fluidly connected to, for example, a gas supply unit 120. The flow channel 115 is formed to be narrow at the end on the wafer mounting surface 1041 side (specifically, for example, the part located inside the electrostatic chuck 104), so that the heat transfer medium in the flow channel 115 is supplied to the wafer mounting surface 1041 via the supply port 113 by capillary action. The flow channel 115 is formed to span, for example, the electrostatic chuck 104, the lower electrode 103, and the insulator 105.

[0032] The gas supply unit 120 may include one or more gas sources 121 and one or more flow controllers 122. In one embodiment, the gas supply unit 120 is configured to supply, for example, one or more gases for generating the heat transfer medium (hereinafter referred to as heat transfer medium generating gases) from the corresponding gas sources 121 to the wafer support base 101 via the corresponding flow controllers 122. Each flow controller 122 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 120 may include one or more flow modulation devices that modulate or pulse the flow rate of one or more heat transfer medium generating gases.

[0033] The heat transfer medium generating gas supplied from the gas supply unit 120 is cooled within the flow path 115, for example by the lower electrode 103 cooled by the temperature-controlled fluid in the flow path 108, and liquefies or solidifies, transforming into a heat transfer medium composed of at least one of a liquid medium or a fluid solid medium. The term "liquid" also includes sols and gels that use a liquid as a dispersion medium. As described above, the heat transfer medium is supplied to the wafer mounting surface 1041 via the supply port 113, for example, by capillary action, to form a heat transfer layer D. Therefore, the flow path 108 can function as at least part of a cooling mechanism configured to cool the heat transfer medium generating gas in the flow path 115 and convert it into a heat transfer medium, and the gas supply unit 120 can function as at least part of a heat transfer layer forming unit configured to form a heat transfer layer D on the wafer mounting surface 1041.

[0034] The aforementioned upper electrode 102 also functions as a showerhead that supplies various gases from the gas supply unit 130 to the plasma processing space 100s. In one embodiment, the upper electrode 102 has a gas inlet 102a, a gas diffusion chamber 102b, and a plurality of gas inlets 102c. The gas inlet 102a is in fluid communication with, for example, the gas supply unit 130 and the gas diffusion chamber 102b. The plurality of gas inlets 102c are in fluid communication with the gas diffusion chamber 102b and the plasma processing space 100s. In one embodiment, the upper electrode 102 is configured to supply various gases from the gas inlet 102a to the plasma processing space 100s via the gas diffusion chamber 102b and the plurality of gas inlets 102c.

[0035] The gas supply unit 130 may include one or more gas sources 131 and one or more flow controllers 132. In one embodiment, the gas supply unit 130 is configured to supply, for example, one or more processing gases to the gas inlet 102a from each corresponding gas source 131 via each corresponding flow controller 132. Each flow controller 132 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 130 may include one or more flow modulation devices that modulate or pulse the flow rates of one or more processing gases.

[0036] The RF power supply unit 140 is configured to supply RF power, for example, one or more RF signals, to one or more electrodes, such as the lower electrode 103, the upper electrode 102, or both the lower electrode 103 and the upper electrode 102. This generates plasma from one or more processing gases supplied to the plasma processing space 100s. Therefore, the RF power supply unit 140 can function as at least part of a plasma generation unit configured to generate plasma from one or more processing gases in the plasma processing chamber 100.

[0037] The RF power supply unit 140 includes, for example, two RF generation units 141a, 141b and two matching circuits 142a, 142b. In one embodiment, the RF power supply unit 140 is configured to supply a first RF signal from the first RF generation unit 141a to the lower electrode 103 via the first matching circuit 142a. For example, the first RF signal may have a frequency in the range of 27 MHz to 100 MHz.

[0038] In one embodiment, the RF power supply unit 140 is configured to supply a second RF signal from the second RF generation unit 141b to the lower electrode 103 via the second matching circuit 142b. For example, the second RF signal may have a frequency in the range of 400 kHz to 13.56 MHz. A voltage pulse other than RF may be supplied instead of the second RF signal. The voltage pulse may be a negative polarity DC voltage. In other examples, the voltage pulse may be a triangular wave or an impulse.

[0039] Furthermore, although not shown in the figures, other embodiments are possible in this disclosure. For example, in an alternative embodiment, the RF power supply unit 140 may be configured to supply a first RF signal from an RF generation unit to the lower electrode 103, a second RF signal from another RF generation unit to the lower electrode 103, and a third RF signal from yet another RF generation unit to the lower electrode 103. In addition, in another alternative embodiment, a DC voltage may be applied to the upper electrode 102.

[0040] Furthermore, in various embodiments, the amplitude of one or more RF signals (i.e., a first RF signal, a second RF signal, etc.) may be pulsed or modulated. Amplitude modulation may include pulsing the RF signal amplitude between an ON state and an OFF state, or between two or more different ON states.

[0041] The exhaust system 150 may be connected to, for example, an exhaust port 100e located at the bottom of the plasma processing chamber 100. The exhaust system 150 may include a pressure valve and a vacuum pump. The vacuum pump may include a turbomolecular pump, a roughing pump, or a combination thereof.

[0042] Furthermore, the processing module 1 has a control unit 160. In one embodiment, the control unit 160 processes computer-executable instructions that cause the processing module 1 to perform the various processes described herein. The control unit 160 may be configured to control each of the other elements of the processing module 1 to perform the various processes described herein. In one embodiment, some or all of the control unit 160 may be included in the other elements of the processing module 1. The control unit 160 may include, for example, a computer 170. The computer 170 may include, for example, a processing unit (CPU: Central Processing Unit) 171, a storage unit 172, and a communication interface 173. The processing unit 171 may be configured to perform various control operations based on a program stored in the storage unit 172. The storage unit 172 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 173 may communicate with the other elements of the processing module 1 via a communication line such as a LAN (Local Area Network).

[0043] <Wafer processing of processing module 1> Next, an example of wafer processing performed using processing module 1 will be explained with reference to Figures 3 to 7. Figure 3 is a flowchart illustrating the example of wafer processing described above. Figures 4 to 7 show the state of processing module 1 during the wafer processing described above. The following processing is performed under the control of control unit 160.

[0044] For example, first, as shown in Figures 3 and 4, a wafer W is placed on the wafer mounting surface 1041 of the wafer support base 101 (step S1). Specifically, the wafer W is transported into the plasma processing chamber 100 by a transport mechanism (not shown), and placed on the wafer mounting surface 1041 of the electrostatic chuck 104 by the raising and lowering of the lifter 107. Subsequently, the inside of the plasma processing chamber 100 is depressurized to a predetermined vacuum level (pressure p1) by the exhaust system 150.

[0045] Next, as shown in Figure 5, a heat transfer medium, which consists of at least one of a liquid medium or a fluid solid medium, is supplied between the wafer mounting surface 1041 and the back surface of the wafer W via the wafer support base 101, and a heat transfer layer D is formed (step S2).

[0046] Specifically, the wafer W is held on the wafer support base 101. For example, a DC voltage is applied to the electrode 109 of the electrostatic chuck 104, and the wafer W is electrostatically attracted to the electrostatic chuck 104 by electrostatic force. At this time, the temperature of the wafer mounting surface 1041 is adjusted to temperature T1, and therefore, the temperature inside the flow path 115 is also adjusted to temperature T1. Note that temperature T1 is set to a temperature at which the process can be effectively carried out, for example, to be equal to the temperature of the wafer mounting surface 1041 during the process.

[0047] After the wafer W is held on the wafer support base 101, a heat transfer medium generating gas is supplied from the gas supply unit 120 to the flow path 115 of the wafer support base 101 at a temperature T2 (>T1) and a pressure p2 (>p1). The heat transfer medium generating gas supplied to the flow path 115 is cooled to a temperature T1 within the flow path 115 and becomes a heat transfer medium composed of at least one of a liquid medium or a fluid solid medium. This heat transfer medium is then supplied to the wafer mounting surface 1041 via the supply port 113, for example, by capillary action. The heat transfer medium supplied to the wafer mounting surface 1041 spreads along the wafer mounting surface 1041 by capillary action in the gap between the wafer mounting surface 1041 and the back surface of the wafer W, forming a heat transfer layer D. Since the heat transfer layer D is formed from a heat transfer medium composed of at least one of a liquid medium or a fluid solid medium, it is deformable.

[0048] Furthermore, if the gap between the wafer mounting surface 1041 and the back surface of the wafer W is too narrow, the viscosity of the heat transfer medium may prevent it from spreading along the wafer mounting surface 1041 by capillary action. Therefore, as described above, by providing grooves 114 on the wafer mounting surface 1041, the gap between the wafer mounting surface 1041 and the back surface of the wafer W can be widened, allowing the heat transfer medium to spread appropriately along the wafer mounting surface 1041 by capillary action. Furthermore, to facilitate the transfer of the heat transfer medium by capillary action, a heat transfer medium with low viscosity may be used.

[0049] The supply of the heat transfer medium to the wafer mounting surface 1041 (specifically, the supply of the gas for generating the heat transfer medium from the gas supply unit 120) is stopped, for example, when the supply amount reaches a predetermined amount (specifically, when the supply time of the gas for generating the heat transfer medium from the gas supply unit 120 exceeds a predetermined time). Alternatively, for example, a monitoring means such as a camera may be used to monitor for leakage of the heat transfer medium from between the wafer mounting surface 1041 and the back surface of the wafer W, and the supply of the heat transfer medium to the wafer mounting surface 1041 may be stopped when leakage is detected. In this case, the monitoring means such as a camera may be located outside the plasma processing chamber 100, and monitoring, i.e., imaging, is performed through an optical window provided in the plasma processing chamber 100.

[0050] Then, plasma treatment is performed on the wafer W on the wafer mounting surface 1041 on which the heat transfer layer D is formed (step S3). Specifically, plasma treatment is performed on the wafer W on which the heat transfer layer D is formed between the wafer mounting surface 1041 and the wafer W.

[0051] More specifically, for example, while the wafer W is held on the wafer support 101, as shown in Figure 6, a processing gas is supplied from the gas supply unit 130 to the plasma processing space 100s via the upper electrode 102, and high-frequency power HF for plasma generation is supplied from the RF power supply unit 140 to the lower electrode 103. This excites the processing gas and generates plasma P. At this time, high-frequency power LF for ion pulling may also be supplied from the RF power supply unit 140. Then, plasma processing is performed on the wafer W by the action of the generated plasma P.

[0052] During plasma processing, the wafer mounting surface 1041 is adjusted to a predetermined temperature T1 by a temperature-controlled fluid flowing through the channel 108 to control the temperature of the wafer W. Furthermore, during plasma processing, the wafer W is placed on the wafer mounting surface 1041 via a heat transfer layer D, and since the heat transfer layer D is deformable as described above, the lower surface, i.e., the back surface, of the wafer W is in close contact with the heat transfer layer D. The heat transfer layer D is formed from a heat transfer medium, and since this heat transfer medium is composed of at least one of a liquid medium or a fluid solid medium, it has higher thermal conductivity than a heat transfer gas such as He. Therefore, when using the heat transfer layer D, the temperature of the wafer W can be adjusted more efficiently via the wafer mounting surface 1041 compared to the conventional method of flowing a heat transfer gas such as He between the wafer mounting surface 1041 and the back surface of the wafer W. Specifically, even if there is a large amount of heat input from the plasma P to the wafer W during plasma processing, the temperature of the wafer W can be maintained at a constant level via the temperature control of the wafer mounting surface 1041. Furthermore, if the set temperature of the wafer W is changed during plasma processing, the temperature of the wafer W can be immediately changed to the changed set temperature via the temperature control of the wafer mounting surface 1041. During plasma processing, if the wafer W is held on the wafer support 101 by electrostatic force, the degree of contact between the wafer W and the wafer support 101 may be controlled by the electrostatic force, thereby controlling the heat dissipation from the wafer W by the wafer support 101.

[0053] During plasma processing, the pressure p3 applied to the heat transfer layer D, including the pressure applied to the heat transfer layer D by electrostatic adsorption of the wafer W, is between 0.1 Torr and 100 Torr. Furthermore, during plasma processing, a DC voltage may be applied to the electrode for edge ring adsorption of the electrostatic chuck 104 so that the edge ring E is electrostatically attracted to the electrostatic chuck 104. In addition, during plasma processing, heat transfer gas may be supplied toward the back surface of the edge ring E from a gas supply hole (not shown) formed on the upper surface 1042 of the peripheral edge of the electrostatic chuck 104.

[0054] When the plasma processing is completed, the supply of high-frequency power HF from the RF power supply unit 140 and the supply of processing gas from the gas supply unit 130 are stopped. If high-frequency power LF was being supplied during the plasma processing, the supply of said high-frequency power LF is also stopped. In addition, the inside of the plasma processing chamber 100 is depressurized to a predetermined vacuum level (pressure p1) by the exhaust system 150. The above pressure p1 is, for example, less than 0.001 Torr. If the edge ring E was being held by the electrostatic chuck 104 and heat transfer gas was being supplied to the back surface of the edge ring E during the plasma processing, at least one of these may be stopped.

[0055] After plasma treatment, the wafer W is separated from the wafer mounting surface 1041, and the heat transfer layer D is vaporized and removed (step S4). In one example, the heat transfer layer D is removed by vaporization. Specifically, after the holding of the wafer W on the wafer support base 101 (for example, by the electrostatic chuck 104) is stopped, the wafer W is raised by the lifter 107 and separated from the wafer mounting surface 1041, as shown in Figure 7. Once separated, the heat transfer layer D is exposed to a reduced pressure atmosphere, specifically to an atmosphere with a pressure p1 of less than 0.001 Torr, which causes it to vaporize and be removed.

[0056] To enable such vaporization, the heat transfer medium used to form the heat transfer layer D is a liquid or fluid solid at temperature T1 at a pressure p3 of 0.1 to 100 Torr, and a gas at temperature T1 at a pressure p1 of less than 0.001 Torr.

[0057] Furthermore, the heat transfer medium generating gas that produces the heat transfer medium forming the heat transfer layer D includes, for example, at least one of B (boron) or C (carbon), which are constituent atoms of the heat transfer layer D, and at least one of H (hydrogen), N (nitrogen), or O (oxygen) which constitute the gas components. In addition, it is preferable that the heat transfer medium generating gas consists of components that do not interfere with the plasma treatment. Furthermore, to remove the heat transfer layer D from the wafer mounting surface 104E1, at least one of the following may be used instead of, or in combination with, exposure of the heat transfer layer D to a reduced pressure atmosphere: exposure of the heat transfer layer D to plasma, heating of the heat transfer layer D, or irradiation of the heat transfer layer D with light.

[0058] Then, wafer W is unloaded (step S5). Specifically, the wafer W is transferred from the lifter 107 to a transport mechanism (not shown), and then removed from the plasma processing chamber 100 by the transport mechanism. This completes the series of wafer processing steps.

[0059] <Effects, etc.> As described above, in this embodiment, during plasma processing, a heat transfer medium composed of at least one of a liquid medium or a fluid solid medium is supplied between the wafer mounting surface 1041 and the back surface of the wafer W via the wafer support base 101 to form a heat transfer layer D. Since this heat transfer layer D is formed from the heat transfer medium described above, it has a higher thermal conductivity than a heat transfer layer made of a heat transfer gas, i.e., a gas. Furthermore, since the heat transfer layer D is deformable as described above, it can be in close contact with the lower surface of the wafer W. Therefore, according to this embodiment, heat can be efficiently exchanged between the wafer W and the wafer mounting surface 1041 via the heat transfer layer D. Consequently, the temperature of the wafer W can be efficiently adjusted via the wafer mounting surface 1041 during plasma processing. Specifically, during plasma processing, the wafer mounting surface 1041 can efficiently absorb heat from the wafer W via the heat transfer layer D, and the wafer mounting surface 1041 can efficiently heat the wafer W via the heat transfer layer D.

[0060] Furthermore, according to this embodiment, since the heat transfer medium forming the heat transfer layer D is composed of a liquid or a fluid solid, it is possible to suppress clogging of the flow path 115 by the heat transfer medium. Furthermore, since the heat transfer layer D vaporizes and is removed when the wafer W is separated from the wafer mounting surface 1041, there is no need to provide a separate step for removing the heat transfer layer D. Therefore, throughput can be improved.

[0061] Furthermore, in this embodiment, during plasma processing, the wafer W is held in place by electrostatic force from the electrostatic chuck 104 on the wafer mounting surface 1041. This allows for closer contact between the heat transfer layer D and the lower surface of the wafer W, thereby further improving the heat dissipation efficiency from the wafer W or the heating efficiency of the wafer W via the wafer mounting surface 1041 and the heat transfer layer D. Moreover, as described above, the adsorption holding by the electrostatic chuck 104 allows for close contact between the heat transfer layer D and the lower surface of the wafer W even if the wafer W is warped. Therefore, even if the wafer W is warped, heat dissipation from the wafer W or heating of the wafer W can be performed efficiently.

[0062] <Variations in the supply method of heat transfer medium> Figure 8 is a diagram illustrating another example of a heat transfer medium supply configuration. In the above example, a gas for generating the heat transfer medium was supplied to the wafer support 101 from the outside and converted into a heat transfer medium within the wafer support 101. However, as shown in Figure 8, a medium supply unit 180 may be provided, and the heat transfer medium itself may be supplied from the medium supply unit 180 to the wafer support 101 (specifically, through the flow path 115).

[0063] The medium supply unit 180 may include one or more heat transfer medium sources 181 and one or more flow controllers 182. In one embodiment, the medium supply unit 180 is configured to supply one or more heat transfer mediums to the wafer support base 101 from each corresponding source 181 via each corresponding flow controller 182. Furthermore, the medium supply unit 180 may include one or more flow modulation devices that modulate or pulse the flow rate of one or more heat transfer mediums.

[0064] Furthermore, in the above example, the heat transfer medium within the wafer support base 101 was supplied to the wafer mounting surface 1041 by capillary action. Alternatively, the heat transfer medium within the wafer support base 101 may be supplied to the wafer mounting surface 1041 by the supply pressure of the heat transfer medium generation gas from an external source to the wafer support base 101, or by the supply pressure of the heat transfer medium from an external source to the wafer support base 101.

[0065] <Variations of heat transfer medium> As described above, when supplying the heat transfer medium from the wafer support 101 to the wafer mounting surface 1041 by the supply pressure of the heat transfer medium from the outside to the wafer support 101, the following may be used as the heat transfer medium. That is, a heat transfer medium containing a powder with higher thermal conductivity than the base material of the heat transfer medium may be used. Specifically, the powder with higher thermal conductivity than the base material of the heat transfer medium is, for example, carbon nanotube powder.

[0066] Furthermore, when supplying the heat transfer medium within the wafer support 101 to the wafer mounting surface 1041 by supplying a heat transfer medium generation gas from an external source to the wafer support 101, a mist containing the highly thermally conductive powder may be used as the heat transfer medium generation gas. By cooling this heat transfer medium generation gas in the flow path 115, it can be transformed into a heat transfer medium mixed with the highly thermally conductive powder, and this heat transfer medium can be supplied to the wafer mounting surface 1041.

[0067] <Specific example of groove 114> Figures 9 and 10 show specific examples of groove 114. As shown in Figure 9, the wafer mounting surface 1041 of the electrostatic chuck 104 may have multiple support columns 116 that support the back surface of the wafer W. In this case, for example, the recesses formed between the support columns 116 constitute a groove 114. Furthermore, a porous material (specifically, a porous ceramic) 117 may be placed in the groove 114, as shown in Figure 10, filling the groove 114. This allows the shape of the wafer W to be maintained when electrostatically adsorbed by the electrostatic chuck 104, regardless of the shape of the groove 114. When the porous material 117 is used, the heat transfer medium moves through the pores of the porous material by capillary action, and can spread along the wafer mounting surface 1041.

[0068] <Other examples of wafer mounting surfaces> In this embodiment, the wafer mounting surface may be made of a porous material in portions other than the groove 114 (specifically, for example, the top of the support column 116). Also, if the groove 114 is not provided on the wafer mounting surface, the entire surface of the wafer mounting surface may be made of a porous material.

[0069] <Other examples of heat transfer layer D formation morphologies> In this embodiment, the heat transfer layer D is formed over the entire wafer mounting surface 1041, including the central and peripheral regions of the wafer mounting surface 1041. However, the heat transfer layer D may be formed only in a portion of the wafer mounting surface 1041. For example, if the central part of the wafer W needs to absorb or heat more heat, the heat transfer layer D may be formed only in the central region of the wafer mounting surface 1041 facing the central part of the wafer W. Alternatively, if the peripheral part of the wafer W needs to absorb or heat more heat, the heat transfer layer D may be formed only in the peripheral region of the wafer mounting surface 1041 facing the peripheral part of the wafer W. For example, by forming grooves 114 only in a portion of the wafer mounting surface 1041, such as the central region, a heat transfer layer D can be formed only in that portion of the surface.

[0070] Furthermore, in this embodiment, the heat transfer layer D has a uniform thickness over the entire wafer mounting surface 1041, including the central and peripheral regions of the wafer mounting surface 1041, but its thickness may vary within the plane of the wafer mounting surface 1041. For example, if the central part of the wafer W needs to absorb or heat more heat, the heat transfer layer D may be made thinner in the central region of the wafer mounting surface 1041 facing the central part of the wafer W compared to the peripheral region. Also, for example, if the peripheral part of the wafer W needs to absorb or heat more heat, the heat transfer layer D may be made thinner in the peripheral region of the wafer mounting surface 1041 facing the peripheral part of the wafer W compared to the central region. In this way, by making the heat transfer layer D thinner only in a part of the wafer mounting surface 1041, such as the central region, the heat exchange efficiency between the wafer mounting surface 1041 and the wafer W can be made to vary within the plane, and the heat exchange efficiency can be made higher only in the aforementioned part of the surface. Furthermore, if grooves 114 are formed on the wafer mounting surface 1041, the depth of the grooves 114 can be varied for each region on the wafer mounting surface 1041, thereby making the heat transfer layer D thinner only in certain regions, such as the central region.

[0071] Furthermore, if grooves 114 are not formed on the wafer mounting surface 1041 and its entire surface is made of a porous material, the heat exchange efficiency between the wafer mounting surface 1041 and the wafer W can be varied within the surface by varying the thickness of the porous material in each region of the wafer mounting surface 1041, similar to the case where the depth of the grooves 114 is varied in each region of the wafer mounting surface 1041.

[0072] Furthermore, the heat transfer layer D may be formed by mixing a conductive medium with high thermal conductivity and a conductive medium with low thermal conductivity, and the mixing ratio of the conductive medium with high thermal conductivity and the conductive medium with low thermal conductivity may be varied in each region of the wafer mounting surface 1041. This also makes it possible to vary the heat exchange efficiency between the wafer mounting surface 1041 and the wafer W within the plane.

[0073] Furthermore, the density of the grooves 114 may be varied for each region on the wafer mounting surface 1041. In other words, if the recesses formed between the support columns 116 constitute the grooves 114, the density of the support columns 116 may be varied for each region on the wafer mounting surface 1041. This makes it possible to vary the proportion of the area where the heat transfer layer is formed for each region on the wafer mounting surface 1041, and to vary the heat exchange efficiency between the wafer mounting surface 1041 and the wafer W within the plane.

[0074] <Regarding the electrical characteristics of heat transfer layer D> The heat transfer layer D may have electrical insulating properties. This generates a residual charge in the heat transfer layer D, which can then be used for electrostatic adsorption of the wafer W. Furthermore, the heat transfer layer D may be conductive. This allows for the removal of residual charge generated on the wafer W via the heat transfer layer D. Furthermore, the heat transfer layer D may be constructed by enclosing a conductive portion with an electrically insulating portion. This ensures high thermal conductivity in the conductive portion (generally, the higher the conductivity, the higher the thermal conductivity), while the electrically insulating portion can electrostatically attract the wafer W with residual charge generated in that portion.

[0075] <Other variations relating to the first embodiment> The wafer mounting surface 1041 of the wafer support base 101 may have a constant height in the central region and the peripheral region, that is, it may be macroscopically flat, or the central region may be higher, or the peripheral region may be higher.

[0076] If the wafer mounting surface 1041 is formed with a high convex shape in the central region, when a wafer W, which is hotter than the wafer mounting surface 1041, is placed on the wafer mounting surface 1041, and the wafer W is cooled from the back surface and thermally deformed to become convex, the wafer W and the wafer mounting surface 1041 can be brought into close contact. Furthermore, if the wafer mounting surface 1041 is formed as a low concave shape in the central region, when a wafer W at a lower temperature than the wafer mounting surface 1041 is placed on the wafer mounting surface 1041, and the wafer W is heated from the back surface and thermally deformed to become concave, the wafer W and the wafer mounting surface 1041 can be brought into close contact.

[0077] As described above, the heat transfer layer D may be formed over the entire wafer mounting surface 1041, or it may be formed only on a part of the wafer mounting surface 1041 (specifically, for example, either the central region or the peripheral region). For regions of the wafer mounting surface 1041 where the heat transfer layer D is not formed, a heat transfer gas such as He gas may be supplied.

[0078] In the above example, an electrostatic chuck 104 was used as the fixing part for holding, i.e., fixing, the wafer W to the wafer mounting surface 1041, which is held in place by electrostatic force generated by applying a DC voltage to the internal electrodes 109. The fixing part that electrically holds, or fixes, the wafer W is not limited to one that holds it by electrostatic force, but may also hold it by the Johnsen-Rabec force. The above-mentioned fixing part is not limited to one that holds electrically as described above. For example, the above fixing The part may be physically fixed, such as by a clamp. A clamp is used to fix the wafer W by sandwiching it between the clamp and the wafer support base 101. The above-mentioned fixing part may be omitted.

[0079] (Second Embodiment) <Plasma Treatment System> Figure 11 is a plan view showing a schematic configuration of a plasma processing system including a processing module as a plasma processing apparatus according to the second embodiment.

[0080] The plasma processing system PS shown in Figure 11 has an atmospheric section 10 and a depressurization section 11, which are integrally connected via load lock modules 20 and 21. The atmospheric section 10 includes an atmospheric module that performs a desired processing on a wafer W, which is a substrate, under atmospheric pressure. The depressurization section 11 includes a processing module 1A that performs a desired processing on a wafer W under a reduced pressure atmosphere (vacuum atmosphere).

[0081] The load lock modules 20 and 21 are provided to connect the loader module 30, which is included in the atmospheric pressure section 10, and the transfer module 50, which is included in the reduced pressure section 11, via gate valves (not shown). The load lock modules 20 and 21 are configured to temporarily hold the wafer W. The load lock modules 20 and 21 are also configured to switch between an atmospheric pressure atmosphere and a reduced pressure atmosphere inside.

[0082] The atmospheric section 10 includes a loader module 30 equipped with a transport mechanism 40 (described later) and a load port 32 on which a hoop (FOUP: Front Opening Unified Pod) 31 is placed. The hoop 31 is capable of storing multiple wafers W. The loader module 30 may also be connected to an orienter module (not shown) for adjusting the horizontal orientation of the wafers W, a buffer module (not shown) for temporarily storing multiple wafers W, and the like.

[0083] The loader module 30 has a rectangular enclosure, and the interior of the enclosure is maintained at atmospheric pressure. Multiple load ports 32, for example, five, are arranged side by side on one side of the longer side of the loader module 30's enclosure. Load lock modules 20 and 21 are arranged side by side on the other side of the longer side of the loader module 30's enclosure.

[0084] Inside the housing of the loader module 30 is a transport mechanism 40 configured to transport wafers W. The transport mechanism 40 includes a transport arm 41 that supports the wafer W during transport, a turntable 42 that rotatably supports the transport arm 41, and a base 43 on which the turntable 42 is mounted. Inside the loader module 30 is a guide rail 44 that extends in the longitudinal direction of the loader module 30. The base 43 is mounted on the guide rail 44, and the transport mechanism 40 is configured to move along the guide rail 44.

[0085] The depressurization unit 11 includes a transfer module 50 for transporting wafers W and edge rings E, a processing module 1A as a plasma processing apparatus for performing plasma processing on the wafers W transported from the transfer module 50, and a storage module 60 as a storage unit for housing the edge rings E. The interiors of the transfer module 50 and the processing module 1 (specifically, the depressurization transport chamber 51 and the plasma processing chamber 100 described later) are maintained in a depressurized atmosphere, and the interior of the storage module 60 is also maintained in a depressurized atmosphere. For one transfer module 50, there are multiple processing modules 1A, for example, six, and multiple storage modules 60, for example, two.

[0086] The transfer module 50 includes a reduced-pressure transfer chamber 51 having a polygonal (pentagonal in the illustrated example) housing, and the reduced-pressure transfer chamber 51 is connected to the load lock modules 20 and 21. The transfer module 50 transfers wafers W loaded into the load lock module 20 to a processing module 1A, and then, after the wafers W have undergone the desired plasma processing in the processing module 1A, it is discharged to the atmosphere 10 via the load lock module 21. The transfer module 50 also transfers edge rings E in the storage module 60 to a processing module 1A, and then discharges edge rings E to be replaced in the processing module 1A to the storage module 60.

[0087] Processing module 1A is connected to transfer module 50 via gate valve 61. The differences between processing module 1A and processing module 1, as described using Figure 1, will be explained later.

[0088] The storage module 60 is connected to the transfer module 50 via a gate valve 62.

[0089] Inside the reduced-pressure transport chamber 51 of the transfer module 50, there is a transport mechanism 70 configured to transport wafers W and edge rings E. Similar to the transport mechanism 40 described above, the transport mechanism 70 includes a transport arm 71 that supports the wafers W and edge rings E during transport, a turntable 72 that rotatably supports the transport arm 71, and a base 73 on which the turntable 72 is mounted. In addition, a guide rail 74 extending in the longitudinal direction of the transfer module 50 is provided inside the reduced-pressure transport chamber 51 of the transfer module 50. The base 73 is mounted on the guide rail 74, and the transport mechanism 70 is configured to move along the guide rail 74.

[0090] In the transfer module 50, the transport arm 71 receives the wafer W held in the load lock module 20 and loads it into the processing module 1A. The transport arm 71 also receives the wafer W held in the processing module 1A and loads it out to the load lock module 21. Furthermore, in the transfer module 50, the transport arm 71 receives the edge ring E from the storage module 60 and transports it into the processing module 1A. The transport arm 71 also receives the edge ring E held in the processing module 1A and transports it back to the storage module 60.

[0091] Furthermore, the plasma processing system PS has a control unit 80. In one embodiment, the control unit 80 processes computer-executable instructions causing the plasma processing system PS to perform various processes described herein. The control unit 80 may be configured to control each of the other elements of the plasma processing system PS to perform the various processes described herein. In one embodiment, some or all of the control unit 80 may be included in the other elements of the plasma processing system PS. Also in one embodiment, the control unit 80 processes computer-executable instructions causing the processing module 1A to perform various processes described herein. The control unit 80 may be configured to control each of the other elements of the processing module 1A to perform the various processes described herein. In one embodiment, some or all of the control unit 80 may be included in the other elements of the processing module 1A. The control unit 80 may include, for example, a computer 90. The computer 90 may include, for example, a processing unit (CPU) 91, a storage unit 92, and a communication interface 93. The processing unit 91 may be configured to perform various control operations based on a program stored in the storage unit 92. The storage unit 92 may include RAM, ROM, HDD, SSD, or a combination thereof. The communication interface 93 may communicate with other elements of the plasma processing system PS via a communication line such as a LAN.

[0092] <Wafer processing using plasma processing system PS> Next, we will describe the wafer processing performed using the plasma processing system PS configured as described above.

[0093] First, the transport mechanism 40 removes the wafer W from the desired hoop 31 and loads it into the load lock module 20. Then the inside of the load lock module 20 is sealed and the pressure is reduced. After that, the inside of the load lock module 20 and the inside of the transfer module 50 are connected.

[0094] Next, the wafer W is held by the transport mechanism 70 and transported from the load lock module 20 to the transfer module 50.

[0095] Next, the gate valve 61 is opened, and the wafer W is transported to the desired processing module 1A by the transport mechanism 70. After that, the gate valve 61 is closed, and the desired processing is performed on the wafer W in the processing module 1A. The processing performed on the wafer W in the processing module 1A will be described later.

[0096] Next, the gate valve 61 is opened, and the wafer W is discharged from the processing module 1A by the transport mechanism 70. After that, the gate valve 61 is closed.

[0097] Next, the transport mechanism 70 loads the wafer W into the load lock module 21. Once the wafer W is loaded into the load lock module 21, the inside of the load lock module 21 is sealed and then opened to the atmosphere. Subsequently, the inside of the load lock module 21 and the inside of the loader module 30 are connected.

[0098] Next, the wafer W is held by the transport mechanism 40 and returned to the desired hoop 31 via the load lock module 21 and loader module 30 for storage. This completes the series of wafer processing steps in the plasma processing system PS.

[0099] <Processing Module 1A> Figures 12 and 13 are longitudinal cross-sectional views illustrating the schematic configuration of the processing module 1A. Note that Figures 12 and 13 show different cross-sectional views of the wafer support base 101A.

[0100] In processing module 1 shown in Figures 1 and 2, the wafer W was the object whose temperature was adjusted via the wafer support base 101 and the heat transfer layer D formed from the heat transfer medium. In contrast, in processing module 1A shown in Figures 12 and 13, not only the wafer W but also the edge ring E is the object whose temperature is adjusted. Therefore, processing module 1A shown in Figures 12 and 13 differs from processing module 1 shown in Figures 1 and 2 mainly in the configuration of the wafer support base. The following will mainly explain these differences.

[0101] The wafer support base 101A of the processing module 1A includes, for example, a lower electrode 200, an electrostatic chuck 201, an insulator 202, and legs 106, and is provided with lifters 107 and 203.

[0102] Similar to the electrostatic chuck 104 in Figure 1, the electrostatic chuck 201 has a wafer mounting surface 1041 in the center, and the upper surface 2011 of the periphery becomes the ring mounting surface on which the edge ring E is placed.

[0103] This electrostatic chuck 201 is an example of a fixing part that fixes the edge ring E to the upper surface 2011 of the peripheral edge of the electrostatic chuck 201, i.e., the ring mounting surface. The electrostatic chuck 201 has an electrode 109 in the center for holding the wafer W by electrostatic adsorption, and an electrode 204 in the peripheral edge for holding the edge ring E by electrostatic adsorption.

[0104] A DC voltage from a DC power supply (not shown) is applied to the electrode 204. The resulting electrostatic force causes the edge ring E to be attracted and held on the upper surface (hereinafter referred to as the ring mounting surface) 2011 of the peripheral edge of the electrostatic chuck 201. The electrode 204 is, for example, a bipolar type including a pair of electrodes, but it may also be a unipolar type.

[0105] The lifter 203 is a lifting member that moves up and down relative to the ring mounting surface 2011 of the electrostatic chuck 201, and is formed, for example, in a columnar shape. When the lifter 203 is raised, its upper end protrudes from the ring mounting surface 2011, making it possible to support the edge ring E. This lifter 203 allows the edge ring E to be transferred between the electrostatic chuck 201 and the transport arm 71 of the transport mechanism 70. The lifters 203 are arranged in groups of three or more, spaced apart from each other, along the circumferential direction of the electrostatic chuck 201. Furthermore, the lifters 203 are arranged to extend in the vertical direction.

[0106] The lifter 203 is connected to a drive unit 205 that raises and lowers the lifter 203. A drive unit 205 is provided for each lifter 203, for example. The drive unit 205 also has a motor (not shown) as a drive source that generates the driving force to raise and lower the lifter 203.

[0107] The lifter 203 is inserted through a through hole 206 whose upper end opens into the ring mounting surface 2011 of the electrostatic chuck 201. The through hole 206 is formed to penetrate, for example, the peripheral edge of the electrostatic chuck 201, the lower electrode 200, and the insulator 202.

[0108] Furthermore, as shown in Figure 13, a heat transfer medium supply port 207 is formed on the ring mounting surface 2011 of the electrostatic chuck 201 of the wafer support base 101A. For example, multiple supply ports 207 are provided on the ring mounting surface 2011. A groove 208 may be provided on the ring mounting surface 2011. The groove 208 is formed so that the heat transfer medium spreads along the ring mounting surface 2011 through the groove 208.

[0109] Furthermore, a flow channel 209 is provided inside the wafer support base 101A, with one end of the flow channel 209 having fluid communication with each supply port 207. The other end of the flow channel 209 is fluidly connected to, for example, a gas supply unit 210. The flow channel 209 is formed to be narrow at the end on the ring mounting surface 2011 side (specifically, for example, the part located inside the electrostatic chuck 201), so that the heat transfer medium in the flow channel 209 is supplied to the ring mounting surface 2011 via the supply port 207 by capillary action. The flow channel 209 is formed to span, for example, the electrostatic chuck 201, the lower electrode 200, and the insulator 202.

[0110] The gas supply unit 210 may include one or more gas sources 211 and one or more flow controllers 212. In one embodiment, the gas supply unit 210 is configured to supply, for example, one or more heat transfer medium generating gases to the wafer support base 101A from the corresponding gas sources 211 via the corresponding flow controllers 212. Each flow controller 212 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 210 may include one or more flow modulation devices that modulate or pulse the flow rate of one or more heat transfer medium generating gases.

[0111] The heat transfer medium generating gas supplied from the gas supply unit 210 is cooled within the flow path 209, for example by the lower electrode 200 which is cooled by the temperature-controlled fluid in the flow path 108, and liquefies or solidifies, transforming into a heat transfer medium composed of at least one of a liquid medium or a fluid solid medium. As described above, the heat transfer medium is supplied to the ring mounting surface 2011 via the supply port 207, for example, by capillary action, to form a heat transfer layer DA. Therefore, the flow path 108 can function as at least part of a cooling mechanism configured to cool the gas for generating the heat transfer medium in the flow path 209 and convert it into a heat transfer medium, and the gas supply unit 210 can function as at least part of a heat transfer layer forming unit configured to form a heat transfer layer DA on the ring mounting surface 2011.

[0112] <Wafer processing of processing module 1A> Next, an example of wafer processing, including the replacement of the edge ring E, performed using processing module 1A, will be described. This will be explained with reference to Figures 14 to 17. Figure 14 is a flowchart illustrating the example of wafer processing described above. Figures 15 to 17 show the state of processing module 1A during the wafer processing described above. Note that the following processing is performed under the control of control unit 160.

[0113] For example, first, as shown in Figures 14 and 15, the edge ring E is placed on the ring mounting surface 2011 of the wafer support base 101A (step S11). Specifically, the edge ring E is transported into the plasma processing chamber 100 by the transport mechanism 70 and placed on the ring mounting surface 2011 of the electrostatic chuck 201 by the raising and lowering of the lifter 203. Subsequently, the inside of the plasma processing chamber 100 is depressurized to a predetermined vacuum level (pressure p11) by the exhaust system 150.

[0114] The edge ring E is transported into the plasma processing chamber 100 in the following manner, for example. Specifically, first, the edge ring E in the storage module 60 is held by the transport arm 71 of the transport mechanism 70. Next, the transport arm 71 holding the edge ring E is inserted into the plasma processing chamber 100 of the processing module 1A through an inlet / outlet (not shown). Then, the edge ring E is transported by the transport arm 71 above the ring mounting surface 2011 of the electrostatic chuck 201. Subsequently, the lifter 203 is raised and lowered and the transport arm 71 is withdrawn from the plasma processing chamber 100, thereby placing the edge ring E on the ring mounting surface 2011 of the electrostatic chuck 201.

[0115] Next, as shown in Figure 16, a heat transfer medium, which consists of at least one of a liquid medium or a fluid solid medium, is supplied via the wafer support base 101A between the ring mounting surface 2011 and the back surface of the edge ring E, and a heat transfer layer DA is formed (step S12).

[0116] Specifically, the edge ring E is held on the wafer support base 101A. For example, a DC voltage is applied to the electrode 204 of the electrostatic chuck 201, and the edge ring E is electrostatically attracted to the electrostatic chuck 201 by electrostatic force. At this time, the temperature of the ring mounting surface 2011 is adjusted to temperature T11, and therefore, the temperature inside the flow path 209 is also adjusted to temperature T11. Note that temperature T11 is set to a temperature at which the process can be effectively carried out, for example, to be equal to the temperature of the ring mounting surface 2011 during the process.

[0117] After the edge ring E is held on the wafer support base 101A, a heat transfer medium generating gas is supplied from the gas supply unit 210 to the flow path 209 of the wafer support base 101A at a temperature T12 (>T11) and a pressure p12 (>p11). The heat transfer medium generating gas supplied to the flow path 209 is cooled to a temperature T11 within the flow path 209 and becomes a heat transfer medium composed of at least one of a liquid medium or a fluid solid medium. This heat transfer medium is then supplied to the ring mounting surface 2011 via the supply port 207, for example, by capillary action. The heat transfer medium supplied to the ring mounting surface 2011 spreads along the ring mounting surface 2011 by capillary action in the gap between the ring mounting surface 2011 and the back surface of the edge ring E, forming a heat transfer layer DA. The heat transfer layer DA is deformable, similar to the heat transfer layer D described above.

[0118] Furthermore, as mentioned above, by providing grooves 208 on the ring mounting surface 2011, the gap between the ring mounting surface 2011 and the back surface of the edge ring E can be widened, allowing the heat transfer medium to spread appropriately along the ring mounting surface 2011 by capillary action. Furthermore, the pressure p13 applied to the heat transfer layer DA, including the pressure applied to the heat transfer layer DA due to the electrostatic attraction of the edge ring E, is between 0.1 Torr and 100 Torr.

[0119] The supply of the heat transfer medium to the ring mounting surface 2011 (specifically, the supply of the gas for generating the heat transfer medium from the gas supply unit 210) is stopped, for example, when the supply amount reaches a predetermined amount (specifically, when the supply time of the gas for generating the heat transfer medium from the gas supply unit 210 exceeds a predetermined time). Alternatively, for example, monitoring means such as a camera may be used to monitor for leakage of the heat transfer medium from between the ring mounting surface 2011 and the back surface of the edge ring E, and the supply of the heat transfer medium to the ring mounting surface 2011 may be stopped when leakage is detected.

[0120] Then, plasma treatment is performed on the wafer W on the upper surface, i.e., the mounting surface, of the electrostatic chuck 201 on which the heat transfer layer DA is formed (step S13). Specifically, plasma processing is performed in the same manner as the process described using Figure 3, for example. More specifically, for example, a wafer W is placed on the wafer mounting surface 1041 of the wafer support base 101A, a heat transfer layer D is formed between the wafer mounting surface 1041 and the back surface of the wafer W, and then plasma processing is performed on the wafer W. After that, the heat transfer layer D is vaporized and removed, and the wafer W is transported away.

[0121] During plasma processing, the ring mounting surface 2011 is adjusted to a predetermined temperature T11 by a temperature-controlled fluid flowing through the channel 108 to control the temperature of the edge ring E. Furthermore, during plasma processing, the edge ring E is mounted on the ring mounting surface 2011 via a heat transfer layer DA, and since the heat transfer layer DA is deformable as described above, the lower surface, i.e., the back surface, of the edge ring E is in close contact with the heat transfer layer DA. The heat transfer layer DA is formed from a heat transfer medium, and since this heat transfer medium is composed of at least one of a liquid medium or a fluid solid medium, it has higher thermal conductivity than a heat transfer gas such as He. Therefore, when using the heat transfer layer DA, the temperature of the edge ring E can be adjusted more efficiently via the ring mounting surface 2011 compared to when a heat transfer gas such as He is flowed between the ring mounting surface 2011 and the back surface of the edge ring E. Specifically, even if a large amount of heat is input from the plasma P to the edge ring E during plasma processing, the temperature of the edge ring E can be kept constant via the temperature control of the ring mounting surface 2011. Furthermore, if the set temperature of the edge ring E is changed during plasma processing, the temperature of the edge ring E can be immediately changed to the new set temperature via the temperature control of the ring mounting surface 2011.

[0122] Furthermore, even during plasma processing, a DC voltage is applied to the electrode 204 of the electrostatic chuck 201, thereby electrostatically attracting and holding the edge ring E to the electrostatic chuck 201. Alternatively, the degree of contact of the edge ring E with the wafer support base 101A may be controlled by electrostatic force, thereby controlling the heat dissipation from the edge ring E by the wafer support base 101A.

[0123] After plasma treatment of the wafer W, the edge ring E is separated from the ring mounting surface 2011, and the heat transfer layer DA is vaporized and removed (step S14). In one example, the heat transfer layer DA is removed by vaporization. Separation of the edge ring E from the ring mounting surface 2011, i.e., removal of the edge ring E, does not need to be performed after each plasma treatment of the wafer W, but is performed, for example, when the edge ring E is worn out or when the heat transfer layer DA is damaged or worn out by the plasma.

[0124] In step S14, specifically, after the retention of the edge ring E on the wafer support base 101A, i.e., the adsorption retention of the edge ring E by the electrostatic chuck 201, is stopped, the edge ring E is raised by the lifter 203 and separated from the ring mounting surface 2011, as shown in Figure 16. Once separated, the heat transfer layer DA is exposed to a reduced pressure atmosphere, specifically to an atmosphere with a pressure p11 of less than 0.001 Torr, which causes it to vaporize and be removed. Furthermore, to remove the heat transfer layer DA from the ring mounting surface 2011, at least one of the following may be used instead of, or in combination with, exposure of the heat transfer layer DA to a reduced pressure atmosphere: exposure of the heat transfer layer DA to plasma, heating of the heat transfer layer DA, or irradiation of the heat transfer layer DA with light.

[0125] Furthermore, the gas used to generate the heat transfer medium for heat transfer layer DA may be the same as or different from the gas used for heat transfer layer D.

[0126] Then, the edge ring E is removed (step S15). Specifically, the edge ring E is transferred from the lifter 203 to the transfer mechanism 70, and then discharged from the plasma processing chamber 100 by the transfer mechanism 70. This completes the series of wafer processing steps.

[0127] <Effects, etc.> As described above, in this embodiment, a heat transfer medium, which consists of at least one of a liquid medium or a fluid solid medium, is supplied between the ring mounting surface 2011 and the back surface of the edge ring E via the wafer support base 101A to form a heat transfer layer DA. Therefore, in this embodiment, for the same reasons as in the first embodiment, the temperature of the edge ring E can be efficiently adjusted via the ring mounting surface 2011 during plasma processing. Furthermore, clogging of the flow path 209 by the heat transfer medium can be suppressed. In addition, since there is no need to provide a separate step for removing the heat transfer layer DA, throughput can be improved.

[0128] Furthermore, in this embodiment, during the rasma treatment, the edge ring E is held in place by electrostatic force from the electrostatic chuck 201. This allows for closer contact between the heat transfer layer DA and the lower surface of the edge ring E, thereby further improving the heat dissipation efficiency from the edge ring E via the ring mounting surface 2011 and the heat transfer layer DA, or the heating efficiency of the edge ring E.

[0129] <Modified examples of forming the heat transfer layer DA for edge rings, examples of the electrical characteristics of the heat transfer layer DA, and specific examples of groove 208> In processing module 1 shown in Figures 1 and 2, the wafer W was the object whose temperature was adjusted via a heat transfer layer D formed from a wafer support 101 and a heat transfer medium. In processing module 1A shown in Figures 12 and 13, both the wafer W and the edge ring E were the objects whose temperatures were adjusted. However, the object whose temperature is adjusted may be only the edge ring E. Specifically, in processing module 1A as shown in Figures 12 and 13, both a channel 209 for forming the heat transfer layer DA for the edge ring E and a channel 115 for forming the heat transfer layer D for the wafer W were provided, but the latter configuration may be omitted.

[0130] In the above example, the target of temperature adjustment is both the wafer W and the edge ring E. The timing for forming the heat transfer layer D for the wafer W was different from the timing for forming the heat transfer layer DA for the edge ring E, but they may be the same. By making them the same, throughput can be improved.

[0131] Furthermore, the supply method of the heat transfer medium for forming the heat transfer layer DA for the edge ring E is not limited to the above example, and similar modifications as those for forming the heat transfer layer D for the wafer W described above can be applied.

[0132] Furthermore, the heat transfer medium for forming the heat transfer layer DA for the edge ring E is not limited to the example described above, and similar modified versions as those used for forming the heat transfer layer D for the wafer W can be applied.

[0133] Furthermore, a specific example similar to the groove 114 described above for forming the heat transfer layer DA for the edge ring E can be applied to the groove 208 for forming the heat transfer layer DA for the edge ring E.

[0134] Furthermore, the ring mounting surface, like the wafer mounting surface, may be made of a porous material in portions other than the groove 208 (specifically, for example, the top of the support column provided within the groove 208). If the ring mounting surface does not have a groove 208, the entire surface of the ring mounting surface may be made of a porous material.

[0135] Furthermore, the heat transfer layer DA for the edge ring E may be formed over the entire ring mounting surface 2011, similar to the heat transfer layer D for the wafer W, or it may be formed only in a portion of the ring mounting surface 2011. For example, the heat transfer layer DA may be formed only on the inner circumference of the ring mounting surface 2011, or it may be formed only on the outer circumference of the ring mounting surface 2011.

[0136] Furthermore, the heat transfer layer DA for the edge ring E may have different thicknesses within the plane of the ring mounting surface 2011, similar to the heat transfer layer D for the wafer W. For example, the heat transfer layer DA may be thinner on the inner circumference side of the ring mounting surface 2011 compared to the outer circumference side, or vice versa.

[0137] Furthermore, if no grooves 208 are formed on the ring mounting surface 2011 and its entire surface is made of a porous material, the thickness of the porous material may be varied for each region on the ring mounting surface 2011.

[0138] Furthermore, the heat transfer layer DA for the edge ring E may be formed by mixing a conductive medium with high thermal conductivity and a conductive medium with low thermal conductivity, and the mixing ratio of the conductive medium with high thermal conductivity and the conductive medium with low thermal conductivity may be different for each region on the ring mounting surface 2011.

[0139] Furthermore, the density of the grooves 208 may be varied for each region on the ring mounting surface 2011.

[0140] The heat transfer layer DA for the edge ring E may have electrical insulating properties. Furthermore, the heat transfer layer DA may be conductive. Furthermore, the heat transfer layer DA may be constructed by enclosing a conductive portion with an electrically insulating portion.

[0141] As described above, the heat transfer layer DA may be formed over the entire ring mounting surface 2011, or it may be formed only on a part of the ring mounting surface 2011. In areas of the ring mounting surface 2011 where the heat transfer layer DA is not formed, a heat transfer gas such as He gas may be supplied.

[0142] In the above example, an electrostatic chuck 201 was used as the fixing part that holds, i.e., fixes the edge ring E to the ring mounting surface 2011 by attracting and holding it with electrostatic force generated by applying a DC voltage to the internal electrode 204. The electrical fixing part is not limited to one that holds by electrostatic force, but may also be one that holds by the Jonsen-Rabec force. The fixing part described above is not limited to those that hold electrically as described above. For example, the fixing part may be a clamp or the like, which is a physically fixing part. The above-mentioned fixing part may be omitted.

[0143] Furthermore, in the above example, the edge ring E was housed in a storage module 60 connected to the transfer module 50, but like the wafer W, it may also be housed in a hoop placed on the load port 32.

[0144] (Other variations) In the examples above, plasma etching was performed as the plasma treatment, but the technology of this disclosure can also be applied when a treatment other than etching (for example, a film deposition treatment) is performed as the plasma treatment.

[0145] In addition, a covering ring may be placed on the wafer support base of the processing module that performs plasma processing, so as to cover the outer surface of the edge ring. In this case, a heat transfer medium may be supplied between the mounting surface on the wafer support base where the covering ring is placed and the bottom surface of the covering ring, in the same manner as the heat transfer layer DA for the edge ring E described above, so as to form a heat transfer layer.

[0146] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the constituent elements of the embodiments described above can be combined in any way. Such any combination will naturally yield the functions and effects of each constituent element in the combination, as well as other functions and effects that will be apparent to those skilled in the art from the description herein.

[0147] Furthermore, the effects described herein are merely descriptive or illustrative and not limiting. In other words, the technology relating to this disclosure may produce other effects that will be apparent to those skilled in the art from the description herein, in addition to or instead of the effects described herein.

[0148] Furthermore, the following configuration examples also fall within the technical scope of this disclosure. (1) A processing method for performing plasma treatment on a substrate, A step of placing the object to be temperature-controlled on the mounting surface of the substrate support part inside a processing container configured to allow for reduced pressure, A heat transfer medium, comprising at least one of a liquid medium or a fluid solid medium, is supplied via the substrate support portion between the aforementioned mounting surface of the substrate support portion and the back surface of the object to be temperature controlled, thereby forming a heat transfer layer. A step of performing plasma treatment on a substrate on the aforementioned surface on which the heat transfer layer is formed, A processing method comprising the step of separating the object to be temperature-controlled from the aforementioned surface after plasma processing. (2) The processing method according to (1), wherein the forming step includes supplying a heat transfer medium generating gas into the substrate support portion and cooling it within the substrate support portion to transform it into the heat transfer medium. (3) The processing method according to (1) or (2), wherein the forming step includes the step of supplying the heat transfer medium from outside the substrate support to inside the substrate support. (4) The processing method according to (2) or (3), wherein the forming step includes a step of supplying the heat transfer medium in the substrate support portion to the mounting surface described above by capillary action. (5) The processing method according to any one of (1) to (4) above, wherein the forming step includes a step of spreading the heat transfer medium supplied between the surface to be placed and the back surface of the object to be temperature controlled along the surface to be placed by capillary action. (6) The processing method according to (5), wherein the spreading step is to spread the heat transfer medium by capillary action through grooves formed on the surface described above. (7) The processing method according to any one of (1) to (6), wherein the step of forming the heat transfer layer is performed only on a portion of the temperature-controlled body. (8) The processing method according to any one of (1) to (7), wherein the step of forming is to form the heat transfer layer of different thicknesses in each region of the temperature-controlled body. (9) The processing method according to any one of (1) to (8), wherein the step of forming the heat transfer layer is to form the heat transfer layer such that the proportion of the portion on which the heat transfer layer is formed differs for each region of the temperature-controlled object. (10) The processing method according to any one of (1) to (9) above, wherein in the forming step, the temperature-controlled object is fixed to the surface described above. (11) The processing method according to (10), wherein the object to be temperature controlled is held and fixed to the aforementioned surface by electrostatic force from an electrostatic chuck. (12) The processing method according to any one of (1) to (11), wherein the temperature-controlled object is at least one of a substrate or an edge ring arranged to surround a substrate placed on the aforementioned mounting surface. (13) The temperature-controlled object is both the substrate and the edge ring, The processing method according to (12), wherein the step of forming on the substrate is performed at a different timing than the step of forming on the edge ring. (14) The temperature-controlled object is both the substrate and the edge ring, The processing method according to (12), wherein the step of forming on the substrate is performed at the same time as the step of forming on the edge ring. (15) The processing method according to any one of (1) to (14), wherein the heat transfer layer is removed when the temperature-controlled object is separated from the surface on which it is placed. (16) A plasma processing apparatus, A processing vessel configured to allow for reduced pressure, A substrate support section is provided within the processing container and has a mounting surface on which the substrate is placed, It comprises a control unit and, The substrate support portion has a channel for supplying a heat transfer medium, which is composed of at least one of a liquid medium or a fluid solid medium, between the mounting surface and the back surface of the substrate. The control unit The steps include: placing the object to be temperature-controlled on the aforementioned mounting surface; The steps include supplying the heat transfer medium between the aforementioned mounting surface and the back surface of the object to be temperature controlled via the substrate support portion to form a heat transfer layer, A step of performing plasma treatment on a substrate on the aforementioned surface on which the heat transfer layer is formed, After plasma treatment, the step of separating the object to be temperature-controlled from the aforementioned mounting surface, A plasma processing device that controls the execution of a specific action. (17) A gas supply unit that supplies a gas for generating a heat transfer medium to the flow path of the substrate support unit, The plasma processing apparatus according to (16), further comprising a cooling mechanism for cooling the heat transfer medium generating gas in the flow path and converting it into the heat transfer medium. (18) The plasma processing apparatus according to (16) or (17), further comprising a medium supply unit for supplying the heat transfer medium to the flow path of the substrate support unit. (19) The plasma processing apparatus according to any one of (16) to (18), wherein the flow path is formed so that the heat transfer medium is supplied to the aforementioned surface by capillary action. (20) The aforementioned surface has grooves formed on it, The plasma processing apparatus according to any one of (16) to (19), wherein the groove is formed such that the heat transfer medium spreads along the aforementioned surface by capillary action through the groove. (21) The plasma processing apparatus according to (20), wherein the groove is formed only in a portion of the surface described above. (22) The plasma processing apparatus according to (20) or (21), wherein the grooves have different depths for each region on the surface described above. (23) The plasma processing apparatus according to any one of (20) to (22), wherein the density of the grooves differs for each region on the surface described above. (24) The plasma processing apparatus according to any one of (20) to (23), wherein a porous body is arranged inside the groove. (25) The plasma processing apparatus according to any one of (16) to (24), further comprising a fixing part for fixing a substrate to the mounting surface described above. (26) The plasma processing apparatus according to (25), wherein the fixing part is an electrostatic chuck that holds and fixes the object to be temperature controlled to the surface described above by electrostatic force. (27) The plasma processing apparatus according to any one of (16) to (25), wherein the temperature-controlled object is at least one of a substrate or an edge ring arranged to surround a substrate placed on the aforementioned mounting surface. (28) The temperature-controlled object is both the substrate and the edge ring, The plasma processing apparatus according to (27), wherein the step of forming on the substrate is performed at a different timing than the step of forming on the edge ring. (29) The temperature-controlled object is both the substrate and the edge ring, The plasma processing apparatus according to (27), wherein the step of forming on the substrate is performed at the same time as the step of forming on the edge ring. (30) The processing method according to any one of (16) to (29), wherein the heat transfer layer is removed when the temperature-controlled object is separated from the surface on which it is placed. [Explanation of symbols]

[0149] 1. 1A Processing Module 100 Plasma Processing Chambers 101, 101A Wafer support base 1041 Wafer mounting surface 108 channels 115, 209 channels 160 Control Unit 2011 Ring mounting surface D, DA heat transfer layer E Edge Ring W wafer

Claims

1. A processing method for performing plasma treatment on a substrate, A step of placing the object to be temperature-controlled on the mounting surface of the substrate support part inside a processing container configured to allow for reduced pressure, A heat transfer medium, comprising at least one of a liquid medium or a fluid solid medium, is supplied via the substrate support portion between the aforementioned mounting surface of the substrate support portion and the back surface of the object to be temperature controlled, thereby forming a heat transfer layer. A step of performing plasma treatment on a substrate on the aforementioned surface on which the heat transfer layer is formed, The process includes the step of separating the object to be temperature-controlled from the aforementioned mounting surface after plasma treatment, The process for forming the heat transfer medium includes supplying a heat transfer medium generating gas into the substrate support portion, cooling it within the substrate support portion, and converting it into the heat transfer medium.

2. The processing method according to claim 1, wherein the step of forming includes a step of supplying the heat transfer medium in the substrate support portion to the aforementioned surface by capillary action.

3. A processing method for performing plasma treatment on a substrate, A step of placing the object to be temperature-controlled on the mounting surface of the substrate support part inside a processing container configured to allow for reduced pressure, A heat transfer medium, comprising at least one of a liquid medium or a fluid solid medium, is supplied via the substrate support portion between the aforementioned mounting surface of the substrate support portion and the back surface of the object to be temperature controlled, thereby forming a heat transfer layer. A step of performing plasma treatment on a substrate on the aforementioned surface on which the heat transfer layer is formed, The process includes the step of separating the object to be temperature-controlled from the aforementioned mounting surface after plasma treatment, The forming step is a processing method that includes a step of spreading the heat transfer medium supplied between the aforementioned surface and the back surface of the object to be temperature controlled along the aforementioned surface by capillary action.

4. The processing method according to claim 3, wherein the spreading step involves spreading the heat transfer medium by capillary action through grooves formed on the surface described above.

5. The processing method according to claim 1, wherein the step of forming the heat transfer layer is performed only on a portion of the temperature-controlled object.

6. The processing method according to claim 1, wherein the step of forming the heat transfer layers of different thicknesses are formed in each region of the temperature-controlled object.

7. The processing method according to claim 1, wherein the step of forming the heat transfer layer is performed such that the proportion of the portion on which the heat transfer layer is formed differs for each region of the temperature-controlled object.

8. The processing method according to claim 1, wherein in the step of forming, the object to be temperature controlled is fixed to the surface described above.

9. The processing method according to claim 8, wherein the object to be temperature-controlled is held and fixed to the aforementioned surface by electrostatic force from an electrostatic chuck.

10. The processing method according to any one of claims 1 to 9, wherein the temperature-controlled object is at least one of a substrate or an edge ring arranged to surround a substrate placed on the aforementioned mounting surface.

11. A processing method for performing plasma treatment on a substrate, A step of placing the object to be temperature-controlled on the mounting surface of the substrate support part inside a processing container configured to allow for reduced pressure, A heat transfer medium, comprising at least one of a liquid medium or a fluid solid medium, is supplied via the substrate support portion between the aforementioned mounting surface of the substrate support portion and the back surface of the object to be temperature controlled, thereby forming a heat transfer layer. A step of performing plasma treatment on a substrate on the aforementioned surface on which the heat transfer layer is formed, The process includes the step of separating the object to be temperature-controlled from the aforementioned mounting surface after plasma treatment, The temperature-controlled object is both the substrate and the edge ring that surrounds the substrate placed on the aforementioned mounting surface. A processing method wherein the step of forming on the substrate is performed at a different timing than the step of forming on the edge ring.

12. A processing method for performing plasma treatment on a substrate, A step of placing the object to be temperature-controlled on the mounting surface of the substrate support part inside a processing container configured to allow for reduced pressure, A heat transfer medium, comprising at least one of a liquid medium or a fluid solid medium, is supplied via the substrate support portion between the aforementioned mounting surface of the substrate support portion and the back surface of the object to be temperature controlled, thereby forming a heat transfer layer. A step of performing plasma treatment on a substrate on the aforementioned surface on which the heat transfer layer is formed, The process includes the step of separating the object to be temperature-controlled from the aforementioned mounting surface after plasma treatment, The temperature-controlled object is both the substrate and the edge ring that surrounds the substrate placed on the aforementioned mounting surface. A processing method wherein the step of forming on the substrate is performed at the same time as the step of forming on the edge ring.

13. The processing method according to any one of claims 1 to 9, 11, or 12, wherein the forming step includes the step of supplying the heat transfer medium from outside the substrate support to inside the substrate support.

14. A plasma processing apparatus, A processing vessel configured to allow for reduced pressure, A substrate support section is provided within the processing container and has a mounting surface on which the substrate is placed, It comprises a control unit and, The substrate support portion has a channel for supplying a heat transfer medium, which is composed of at least one of a liquid medium or a fluid solid medium, between the mounting surface and the back surface of the substrate. The control unit The steps include: placing the object to be temperature-controlled on the aforementioned mounting surface; The steps include supplying the heat transfer medium between the aforementioned mounting surface and the back surface of the object to be temperature controlled via the substrate support portion to form a heat transfer layer, A step of performing plasma treatment on a substrate on the aforementioned surface on which the heat transfer layer is formed, After plasma treatment, the step of separating the object to be temperature-controlled from the aforementioned mounting surface, Control the execution of the following: A gas supply unit that supplies a heat transfer medium generation gas to the flow path of the substrate support unit, A plasma processing apparatus further comprising a cooling mechanism for cooling the heat transfer medium generating gas in the flow path and converting it into the heat transfer medium.

15. The cooling mechanism is Other flow channels formed inside the substrate support portion, The plasma processing apparatus according to claim 14, further comprising a chiller that supplies a refrigerant for cooling the substrate support portion to the other flow path.

16. A plasma processing apparatus, A processing vessel configured to allow for reduced pressure, A substrate support section is provided within the processing container and has a mounting surface on which the substrate is placed, It comprises a control unit and, The substrate support portion has a channel for supplying a heat transfer medium, which is composed of at least one of a liquid medium or a fluid solid medium, between the mounting surface and the back surface of the substrate. The control unit The steps include: placing the object to be temperature-controlled on the aforementioned mounting surface; The steps include supplying the heat transfer medium between the aforementioned mounting surface and the back surface of the object to be temperature controlled via the substrate support portion to form a heat transfer layer, A step of performing plasma treatment on a substrate on the aforementioned surface on which the heat transfer layer is formed, After plasma treatment, the step of separating the object to be temperature-controlled from the aforementioned mounting surface, Control the execution of the following: A plasma processing apparatus in which the flow path is formed so that the heat transfer medium is supplied to the aforementioned surface by capillary action.

17. A plasma processing apparatus, A processing vessel configured to allow for reduced pressure, A substrate support section is provided within the processing container and has a mounting surface on which the substrate is placed, It comprises a control unit and, The substrate support portion has a channel for supplying a heat transfer medium, which is composed of at least one of a liquid medium or a fluid solid medium, between the mounting surface and the back surface of the substrate. The control unit The steps include: placing the object to be temperature-controlled on the aforementioned mounting surface; The steps include supplying the heat transfer medium between the aforementioned mounting surface and the back surface of the object to be temperature controlled via the substrate support portion to form a heat transfer layer, A step of performing plasma treatment on a substrate on the aforementioned surface on which the heat transfer layer is formed, After plasma treatment, the step of separating the object to be temperature-controlled from the aforementioned mounting surface, Control the execution of the following: The aforementioned mounting surface has grooves formed therein. The groove is formed such that the heat transfer medium spreads along the aforementioned surface by capillary action through the groove, in a plasma processing apparatus.

18. The plasma processing apparatus according to claim 17, wherein the groove is formed only in a portion of the surface described above.

19. The plasma processing apparatus according to claim 17, wherein the grooves have different depths for each region on the surface described above.

20. The plasma processing apparatus according to claim 17, wherein the density of the grooves differs for each region on the surface described above.

21. The plasma processing apparatus according to claim 17, wherein a porous body is arranged inside the groove.

22. The plasma processing apparatus according to any one of claims 14 to 16, wherein the mounting surface is entirely formed of a porous material.

23. The plasma processing apparatus according to any one of claims 14 to 21, wherein the mounting surface is formed with a central region higher than the peripheral region.

24. The plasma processing apparatus according to any one of claims 14 to 21, wherein the mounting surface is formed with a central region lower than the peripheral region.

25. The plasma processing apparatus according to any one of claims 14 to 21, further comprising a fixing part for fixing a substrate to the mounting surface.

26. The plasma processing apparatus according to claim 25, wherein the fixing part is an electrostatic chuck that fixes the object to be temperature controlled by adsorption and holding it to the aforementioned mounting surface by electrostatic force.

27. The plasma processing apparatus according to any one of claims 14 to 21, wherein the temperature-controlled object is at least one of a substrate or an edge ring arranged to surround a substrate placed on the aforementioned mounting surface.

28. A plasma processing apparatus, A processing vessel configured to allow for reduced pressure, A substrate support section is provided within the processing container and has a mounting surface on which the substrate is placed, It comprises a control unit and, The substrate support portion has a channel for supplying a heat transfer medium, which is composed of at least one of a liquid medium or a fluid solid medium, between the mounting surface and the back surface of the substrate. The control unit The steps include: placing the object to be temperature-controlled on the aforementioned mounting surface; The steps include supplying the heat transfer medium between the aforementioned mounting surface and the back surface of the object to be temperature controlled via the substrate support portion to form a heat transfer layer, A step of performing plasma treatment on a substrate on the aforementioned surface on which the heat transfer layer is formed, After plasma treatment, the step of separating the object to be temperature-controlled from the aforementioned mounting surface, Control the execution of the following: The temperature-controlled object is both the substrate and the edge ring that surrounds the substrate placed on the aforementioned mounting surface. A plasma processing apparatus in which the process of forming on the substrate is performed at a different timing than the process of forming on the edge ring.

29. A plasma processing apparatus, A processing vessel configured to allow for reduced pressure, A substrate support section is provided within the processing container and has a mounting surface on which the substrate is placed, It comprises a control unit and, The substrate support portion has a channel for supplying a heat transfer medium, which is composed of at least one of a liquid medium or a fluid solid medium, between the mounting surface and the back surface of the substrate. The control unit The steps include: placing the object to be temperature-controlled on the aforementioned mounting surface; The steps include supplying the heat transfer medium between the aforementioned mounting surface and the back surface of the object to be temperature controlled via the substrate support portion to form a heat transfer layer, A step of performing plasma treatment on a substrate on the aforementioned surface on which the heat transfer layer is formed, After plasma treatment, the step of separating the object to be temperature-controlled from the aforementioned mounting surface, Control the execution of the following: The temperature-controlled object is both the substrate and the edge ring that surrounds the substrate placed on the aforementioned mounting surface. A plasma processing apparatus in which the process of forming on the substrate is performed at the same timing as the process of forming on the edge ring.

30. The plasma processing apparatus according to any one of claims 14 to 21, 28, or 29, further comprising a medium supply unit for supplying the heat transfer medium to the flow path of the substrate support unit.

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