Semiconductor equipment
The semiconductor device with trenches, crystalline oxide semiconductor, and carrier discharge portion reduces malfunctions, improving reliability and performance.
JP2026101548APending Publication Date: 2026-06-22FLOSFIA
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Patent Information
- Application Number
- JP2024216017
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2024-12-10
- Publication Date
- 2026-06-22
AI Technical Summary
Technical Problem
Existing semiconductor devices are prone to malfunctions.
Method used
A semiconductor device comprising a semiconductor layer with trenches and mesa portions, a crystalline oxide semiconductor containing gallium, a high-resistivity film along the trench inner surface, and a carrier discharge portion to discharge carriers to a second electrode.
Benefits of technology
The device is less likely to malfunction, enhancing reliability and performance.
✦ Generated by Eureka AI based on patent content.
Abstract
The objective is to provide semiconductor devices that are less prone to malfunctions. [Solution] A semiconductor device comprising a semiconductor layer having a plurality of trenches and mesa portions between adjacent trenches, and containing a crystalline oxide semiconductor containing gallium; a first electrode electrically connected to the mesa portion; a high-resistance film along the inner surface of the trenches; a second electrode located within the trenches and electrically connected to the first electrode; and a carrier discharge portion in contact with the second electrode and the bottom surface of the trenches, for discharging carriers to the second electrode.
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