Indication device

Abstract

To provide an imaging device or display device capable of clearly capturing fingerprints and the like. [Solution] The display device comprises a light-receiving element, a light-emitting element, a first substrate, a second substrate, a first resin layer, a second resin layer, and a light-shielding layer. The first resin layer, the second resin layer, and the second substrate are laminated on the first substrate. The light-receiving element and the light-emitting element are located between the first substrate and the first resin layer. The light-shielding layer is located between the first resin layer and the second resin layer and has an opening that overlaps with the light-receiving element. In a plan view, the opening of the light-shielding layer is located inside the light-receiving area of ​​the light-receiving element, and the width of the opening is less than or equal to the width of the light-receiving area. The second substrate is thicker than the first resin layer and the second resin layer. The thickness of the portion of the first resin layer that overlaps with the light-receiving area of ​​the light-receiving element is between 1 and 10 times the width of the light-receiving area. The refractive index of the second substrate is higher than that of the first and second resin layers.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device. One aspect of the present invention relates to a display device equipped with an imaging function. Regarding.

[0002] Furthermore, one aspect of the present invention is not limited to the above-mentioned technical field. One aspect of the technical field is semiconductor devices, display devices, light-emitting devices, energy storage devices, and memory devices. Electronic equipment, lighting equipment, input devices, input / output devices, methods for driving them, or methods for manufacturing them. Laws can be cited as one example. Semiconductor devices function by utilizing semiconductor properties. This refers to all devices that can do so. [Background technology]

[0003] In recent years, display devices have been required to be higher resolution in order to display high-resolution images. , smartphones, tablet devices, notebook PCs (personal computers), etc. In information terminal equipment, display devices are required to have not only high resolution but also low power consumption. Furthermore, it has functions as a touch panel, a function to capture fingerprints for authentication, and other image-based features. There is a demand for display devices that not only show information but also have various additional functions.

[0004] As a display device, for example, a light-emitting device having an electroluminescent element has been developed. The phenomenon of luminescence (electroluminescence, hereafter referred to as EL) is utilized. The light-emitting element (also known as an EL element) used is easy to make thin and lightweight, and it can handle input signals at high speed. It has features such as being able to respond to and being able to be driven using a DC constant voltage power supply, and the display device It is being applied. For example, Patent Document 1 describes a flexible light-emitting diode to which an organic EL element is applied. The optical device has been disclosed. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2014-197522 [Overview of the project] [Problems that the invention aims to solve]

[0006] One aspect of the present invention aims to provide a display device having an imaging function. One embodiment provides an imaging device or display device capable of clearly capturing fingerprints or the like. One of the objectives is to provide a display device that is less prone to damage. This will be one of the issues to address.

[0007] One aspect of the present invention aims to reduce the number of components in an electronic device. One aspect of this invention aims to provide a multifunctional display device. One of the objectives is to provide a display device, imaging device, vehicle, or electronic device having a configuration. One aspect of the present invention mitigates at least one of the problems of the prior art. This will be one of the challenges.

[0008] Furthermore, the description of these problems does not preclude the existence of other problems. One approach does not require that all of these issues be resolved. The title can be extracted from descriptions such as the specification, drawings, and claims. [Means for solving the problem]

[0009] One aspect of the present invention comprises a light-receiving element, a light-emitting element, a first substrate, a second substrate, and a first tree A display device having an oil layer, a second resin layer, and a light-shielding layer. On a first substrate, the first A resin layer, a second resin layer, and a second substrate are stacked in this order. The light-receiving element and the light-emitting element are , are located between the first substrate and the first resin layer, respectively. The light-shielding layer is located between the first resin layer and the second It has a first opening located between the resin layers and overlapping with the light-receiving element. The light-shielding layer is, in plan view In this configuration, the first aperture is located inside the light-receiving area of ​​the light-receiving element, and in cross-sectional view, The first aperture has a region in which the width is less than or equal to the width of the light-receiving area. The second substrate has a first resin layer The first resin layer is thicker than the second resin layer. The thickness of the first resin layer is the thickness of the part that overlaps with the light-receiving area of ​​the photodetector. However, it has a region that is between 1 and 10 times the width of the light-receiving region. The second substrate has a light-emitting element. The refractive index for the wavelength of light emitted is higher than that of the first and second resin layers.

[0010] Another aspect of the present invention is a display having a first display panel and a second display panel. It is a display device. The first display panel has a first region. The first region has a first pixel and The second display panel has a second region, a third region, and a fourth region. It has a region and a third pixel. The third region transmits visible light. The fourth region has the function of blocking visible light. The second pixel and the third A region has areas that overlap with each other. The first pixel, the second pixel, and the third pixel have fewer areas. Each device has a light-emitting element and a light-receiving element.

[0011] Furthermore, the first display panel or the second display panel includes a light-receiving element, a light-emitting element, and the first It has a substrate, a second substrate, a first resin layer, a second resin layer, and a light-shielding layer. Preferably, a first resin layer, a second resin layer, and a second substrate are arranged on the first substrate in this order. They are stacked. The light-receiving element and the light-emitting element are located between the first substrate and the first resin layer, respectively. The light-shielding layer is located between the first resin layer and the second resin layer, and overlaps with the light-receiving element. It has an opening. In a plan view, the light-shielding layer has a first opening inside the light-receiving area of ​​the light-receiving element. It is located in such a position, and in a cross-sectional view, it has a region where the width of the first aperture is less than or equal to the width of the light-receiving region. The second substrate is thicker than the first resin layer and the second resin layer. The first resin layer is light-receiving. A region where the thickness of the part of the element that overlaps with the light-receiving area is between 1 and 10 times the width of the light-receiving area. The second substrate has a refractive index with respect to the wavelength of light emitted by the light-emitting element, and the first resin layer and It is higher than the second resin layer.

[0012] Furthermore, in any of the above, the light-receiving element comprises a first pixel electrode, an active layer, and a common electrode. It is preferable that the light-emitting element has a second pixel electrode, a light-emitting layer, and a common electrode. It is preferable that the first pixel electrode and the second pixel electrode are on the same plane. It is preferable that it be located in this position. Furthermore, the common electrode overlaps with the first pixel electrode via the active layer. It is preferable to have a portion that is illuminated and a portion that overlaps with the second pixel electrode via the light-emitting layer.

[0013] Furthermore, it is preferable to have a common layer in any of the above. The common layer is the first The portion located between the first pixel electrode and the common electrode, and the portion located between the second pixel electrode and the common electrode It has a portion that does not overlap with either the first pixel electrode or the second pixel electrode. It is preferable to do so.

[0014] Furthermore, in any of the above, the first resin layer has a refractive index to the wavelength of light emitted by the light-emitting element. It is preferable that the folding ratio is lower than that of the second resin layer.

[0015] Furthermore, in any of the above, the second substrate is refraction of the wavelength of light emitted by the light-emitting element. The ratio is preferably 1.5 or more and 2.0 or less. Furthermore, the first resin layer is such that the light-emitting element emits It is preferable that the refractive index for the wavelength of light is 1.3 or more and 1.6 or less.

[0016] Furthermore, in any of the above, it is preferable to have multiple light-receiving elements. The photodetectors are preferably arranged periodically in a matrix. The array pitch is preferably 1 μm or more and 150 μm or less.

[0017] Furthermore, it is preferable to have multiple light-emitting elements in the above. It is preferable that the light-emitting elements are arranged in a matrix with the same array pitch as the light-receiving elements. Alternatively, multiple light-emitting elements may be arranged in a matrix with a different array pitch from the light-receiving elements. This is preferable.

[0018] Furthermore, it is preferable that any of the above have an additional functional layer. The layer preferably has a third resin layer and is located between the second resin layer and the second substrate. Furthermore, the third resin layer has a lower refractive index with respect to the wavelength of light emitted by the light-emitting element than the second substrate. It is preferable that the third resin layer is thinner than the second substrate and the first resin layer It is preferable that the first and second resin layers are thicker than the second resin layer.

[0019] Furthermore, in the above, it is preferable that the functional layer has the function of a polarizing plate. The functional layer preferably has the function of a touch sensor. In this case, the functional layer is It is preferable to have a first electrode provided along the first surface of the third resin layer.

[0020] Furthermore, in any of the above, it is preferable to have a fourth resin layer. Preferably, the fourth resin layer is located between the functional layer and the second substrate. The lipid layer is preferably thinner than the second substrate and functional layer. Also, the fourth resin layer is the second It is preferable that the refractive index for the wavelength of light emitted by the light-emitting element is lower than that of the substrate.

[0021] Furthermore, in any of the above, it is preferable to have an additional protective layer. The layer is located between the first substrate and the first resin layer. The protective layer also contains the light-receiving element and the light-emitting element. It is provided covering the element and preferably includes an inorganic insulator. Furthermore, the protective layer is a first tree It is preferable that it be thinner than the fat layer.

[0022] Furthermore, the above-mentioned invention provides a second electrode between the protective layer and the first resin layer. This is preferable. In this case, the second electrode is preferably to function as an electrode for a touch sensor. Furthermore, it is preferable that the second electrode is thinner than the first resin layer.

[0023] Another aspect of the present invention is a device comprising any one of the above-mentioned display devices and a connector or integrated circuit. It is a display module that has a road and a [path].

[0024] Another aspect of the present invention includes the above-mentioned display module, an antenna, a battery, a housing, and a At least one of the following: camera, speaker, microphone, touch sensor, and operation button, It is an electronic device.

[0025] Another aspect of the present invention is that any one of the above-mentioned display devices is located on the surface of the dashboard. It is a vehicle that was installed along the line.

[0026] Another aspect of the present invention is that any one of the above-mentioned display devices is provided along the surface of the door. It is a vehicle that was used. [Effects of the Invention]

[0027] According to one aspect of the present invention, a display device having an imaging function can be provided. Or, fingerprints, etc. An imaging device or display device that can clearly image the object can be provided. Or, if damaged We can provide a display device that is difficult to use.

[0028] According to one aspect of the present invention, the number of components in an electronic device can be reduced. Alternatively, a multi-functional display device can be used. We can provide a display device, imaging device, vehicle, or electronic device with a novel configuration. We can provide containers, etc. Or, we can mitigate at least one of the problems of the prior art. ru.

[0029] Furthermore, the description of these effects does not preclude the existence of other effects. One embodiment does not necessarily have to possess all of these effects. Furthermore, other effects may be considered. This information can be extracted from descriptions such as specifications, drawings, and claims. [Brief explanation of the drawing]

[0030] [Figure 1] Figure 1 shows an example of a display device configuration. [Figure 2] Figures 2A to 2C show examples of display device configurations. [Figure 3]Figure 3A shows an example of the display device configuration. Figure 3B shows an example of the light reception intensity. Figure 3C shows the finger contact area. Figure 3D shows an example of an image. [Figure 4] Figure 4 shows an example of the configuration of an display device. [Figure 5] Figure 5 shows an example of a display device configuration. [Figure 6] Figures 6A to 6E show examples of touch sensor panel configurations. [Figure 7] Figures 7A, 7B, and 7D are cross-sectional views showing examples of the configuration of a display device. Figures 7C and 7E are examples of images captured by the display device. Figures 7F to 7H are top views showing examples of pixels. [Figure 8] Figure 8A is a cross-sectional view showing an example of the configuration of a display device. Figures 8B to 8D are top views showing an example of a pixel. [Figure 9] Figure 9A is a cross-sectional view showing an example of the configuration of a display device. Figures 9B to 9I are top views showing an example of a pixel. [Figure 10] Figures 10A and 10B show examples of display device configurations. [Figure 11] Figures 11A to 11G show examples of display device configurations. [Figure 12] Figures 12A to 12C show examples of display device configurations. [Figure 13] Figures 13A to 13C show examples of display device configurations. [Figure 14] Figures 14A and 14B show examples of the configuration of a display device. [Figure 15] Figure 15 shows an example of a display device configuration. [Figure 16] Figure 16A shows an example of the configuration of a display device. Figures 16B and 16C show examples of the configuration of a transistor. [Figure 17] Figures 17A and 17B show examples of pixel configurations. Figures 17C through 17E show examples of pixel circuit configurations. [Figure 18]Figures 18A and 18B show examples of the configuration of a display device. [Figure 19] Figures 19A to 19C show examples of the configuration of a display device. [Figure 20] Figure 20 shows an example of a vehicle configuration. [Figure 21] Figures 21A and 21B show examples of the configuration of electronic equipment. [Figure 22] Figures 22A to 22D show examples of electronic device configurations. [Figure 23] Figures 23A to 23F show examples of electronic device configurations. [Figure 24] Figures 24A and 24B show the measurement results of the absorption coefficient of the photodetector. [Figure 25] Figures 25A and 25B show the measurement results of the current-voltage characteristics of the photodetector. [Figure 26] Figure 26A shows the measurement results of the external quantum efficiency. Figure 26B shows the reliability test results of the photodetector. [Modes for carrying out the invention]

[0031] The embodiments will be described below with reference to the drawings. However, many embodiments are described. It can be implemented in different ways, without deviating from its purpose and scope. Those skilled in the art will readily understand that the form and details can be modified in various ways. Therefore, the present invention This shall not be interpreted as being limited to the contents described in the following embodiments.

[0032] In the configuration of the invention described below, the same part or part having a similar function is The same reference numerals are used consistently across different drawings, and explanations of their repetition are omitted. When referring to the function of [this], the hatch pattern is the same, and sometimes no specific symbol is assigned.

[0033] In each figure described herein, the size, layer thickness, or area of ​​each component is not specified. This may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale. I can't.

[0034] In this specification, ordinal numbers such as "the first," "the second," etc., are used to avoid confusion of constituent elements. This is added for the purpose of providing a numerical limit, and is not intended to limit the number of items.

[0035] In the following, expressions indicating direction, such as "up" and "down," generally correspond to the orientation shown in the drawing. It shall be used in this manner. However, for the purpose of making explanations easier, etc., the following may be included in the specification. The direction indicated by "up" or "down" may not always match that shown in the drawing. For example, When explaining the stacking order (or formation order) of a laminate, etc., the drawing should show the laminate as being constructed. The side being attacked (the surface to be formed, the support surface, the adhesive surface, the flat surface, etc.) is positioned above the laminate. Even when something is simply placed down, it may be described as having that orientation down, or the opposite orientation as up.

[0036] In this specification, the EL layer is provided between a pair of electrodes of the light-emitting element, and at least This refers to a layer containing a light-emitting substance (also called a light-emitting layer), or a laminate containing a light-emitting layer. .

[0037] Furthermore, in this specification, the photoelectric conversion layer is provided between a pair of electrodes of the light-receiving element, and at least Both terms refer to the active layer or a laminate containing the active layer. The active layer is defined as the light absorption layer. This refers to a layer that has the function of generating electron-hole pairs. The active layer is a single layer. and laminates are included.

[0038] In this specification, a display panel, which is one form of a display device, displays an image or the like on its display surface. It has the function of (powering). Therefore, the display panel is one form of an output device.

[0039] Furthermore, in this specification, the substrate of the display panel may be, for example, FPC (Flexible Printed Circuit). (inted Circuit) or TCP (Tape Carrier Packa A connector such as a ge is attached, or the circuit board has a COG (Chip On A display panel module or display module is a device on which an IC is mounted using a glass or similar method. It may be called a display panel, or simply a display board.

[0040] (Embodiment 1) This embodiment describes an example of the configuration of one aspect of the present invention.

[0041] One aspect of the present invention is a plurality of light-receiving elements (also called light-receiving devices) arranged in a matrix. ) and has multiple light-emitting elements (also called light-emitting devices).

[0042] One aspect of the present invention is an imaging device that can capture images using multiple light-receiving elements. It functions in this way. In this case, the light-emitting element can be used as a light source for imaging. In one aspect of the present invention, an image can be displayed by multiple light-emitting elements, so the display device It functions as a device. Therefore, one aspect of the present invention is a display device having an imaging function, or It can be described as an imaging device that has a display function.

[0043] For example, in one aspect of the present invention, a display device has light-emitting elements arranged periodically in a matrix on the display unit. Furthermore, light-receiving elements are periodically arranged in a matrix on the display unit. Therefore, The display unit has the function of displaying images and the function of receiving light. Since an image can be captured using a number of light-receiving elements, the display device is an image sensor and It can function as a touch panel, etc. That is, it can capture images on the display unit. This allows for the detection of an object approaching or making contact with an object. The light-emitting element provided in the display unit can be used as a light source when receiving light, There is no need to provide a separate light source from the display device, and functionality can be enhanced without increasing the number of electronic components. It enables the creation of high-performance display devices.

[0044] One aspect of the present invention is a light-receiving element that, when the light emitted from a light-emitting element of a display unit is reflected by an object, Because it can detect the reflected light, it enables imaging and touch (including non-contact) detection even in dark environments. It is possible to do so.

[0045] Furthermore, in one aspect of the present invention, the display device detects fingerprints when a finger, palm, etc., is brought into contact with the display unit. Or, palm prints can be imaged. Therefore, an electronic device equipped with a display device according to one aspect of the present invention The device can perform personal authentication using images such as fingerprints and palm prints that have been captured. Therefore, there is no need to separately install imaging devices for fingerprint authentication, palm print authentication, etc., and electronic devices The number of parts can be reduced. In addition, the display unit has light-receiving elements arranged in a matrix. Therefore, fingerprints, palm prints, etc. can be captured from any location on the display, making it convenient. This enables the creation of high-performance electronic devices.

[0046] As a light-emitting element, OLED (Organic Light Emitting Diode) ode), QLED(Quantum-dot Light Emitting Dio) It is preferable to use an EL element such as de). As for the light-emitting material of the EL element, firefly Substances that emit light (fluorescent materials), substances that emit phosphorescence (phosphorescent materials), and substances that exhibit thermally activated delayed fluorescence. Substance (Thermally activated delayed fluorescence) Fluorescence (TADF) materials, inorganic compounds (such as quantum dot materials), etc. These are some examples.

[0047] For example, a pn-type or pin-type photodiode can be used as the light-receiving element. Yes, it is possible. The light-receiving element is a photoelectric conversion element that detects light incident on the light-receiving element and generates an electric charge. It functions in this way. The amount of charge generated by a photoelectric conversion element is determined by the amount of incident light. In particular, It is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving element. Organic photodiodes are easy to make thin, light, and large in area, and also shape Due to its high degree of freedom in shape and design, it can be applied to various display devices.

[0048] Furthermore, it is preferable to use an organic compound in the active layer of the light-receiving element. It is preferable to place one electrode of the light-receiving element (also called the pixel electrode) on the same plane. Furthermore, the other electrode of the light-emitting element and the light-receiving element is an electrode formed by a continuous conductive layer. It is more preferable to have a common electrode (also called a common electrode). Furthermore, the light-emitting element and the light-receiving element are common It is more preferable to have a layer. This makes the fabrication of the light-emitting element and the light-receiving element easier. This allows for the simplification of the process, reduction of manufacturing costs, and improvement of manufacturing yield. Cut.

[0049] The light-emitting element and the light-receiving element are configured to be placed between the first substrate and the second substrate. Yes, it is possible. In this case, the light-emitting element emits light towards the second substrate, and the light-receiving element receives light from the second substrate side. It is assumed that the incident light is received. Also, in the display device, the outer surface of the second substrate (first The side opposite to the substrate is the display surface and the light-receiving surface (also called the imaging surface) of the display device. It functions as such. Note that the display surface and light-receiving surface are not limited to the surface of the second substrate itself. For example, The second substrate surface may also be coated with an inorganic or organic material.

[0050] The range over which a single light-receiving element can receive light becomes wider as the object moves further away from the light-receiving element. If the distance between the light-receiving element and the object is large, the captured image will be blurred, and a clear image cannot be obtained. It becomes impossible. Here, the distance between the light-receiving element and the object is smallest when the object is a display device This is the case when the object is in contact with the light-receiving surface of the display device. It is required that a clear image can be captured when in contact with the surface.

[0051] For example, by reducing the thickness of the second substrate, the distance between the photodetector and the photodetector can be reduced. Therefore, a clear image can be captured. On the other hand, if the second substrate is made thinner, the display device There is a problem in that the mechanical strength is reduced. Therefore, it is necessary to enable clear imaging and high mechanical strength. The display device must possess mechanical strength.

[0052] Therefore, one aspect of the present invention is a configuration in which a light-emitting element and a light-receiving element are arranged side by side on a first substrate. Furthermore, the light-emitting element and the light-receiving element are covered by a first resin layer, a second resin layer, and a second base The plates are arranged in this order. Furthermore, on the light-receiving element, an opening overlapping the light-receiving area of ​​the light-receiving element is provided. A light-shielding layer having an opening is provided. The light-shielding layer is placed between the first resin layer and the second resin layer. The second substrate uses a material that is thicker than the first and second resin layers. The resin layer is made thicker than the width of the light-receiving area of ​​the photodetector. Furthermore, the second substrate has the first resin A material with a higher refractive index for the wavelength of light emitted by the light-emitting element is used than the lipid layer and the second resin layer. Yes, they are.

[0053] By using a light-shielding layer with an aperture that overlaps with the light-receiving element, the range in which the light-receiving element can receive light is narrowed. This can be achieved. Furthermore, by making the first resin layer thicker, the distance between the light-shielding layer and the light-receiving element can be increased. Furthermore, the range in which the light-receiving element can receive light can be further narrowed. In addition, as the first substrate By using materials with a high refractive index, the range of light incident on a single photodetector can be further narrowed. This allows for clear imaging while also enabling a thicker second substrate. This makes it possible to increase mechanical strength.

[0054] Furthermore, as the first resin layer, the refractive index with respect to the wavelength of light emitted by the light-emitting element is the second resin By using a material with a lower refractive index than the first layer, the refractive index difference between the first resin layer and the second resin layer allows for... This makes it possible to further narrow the range in which the optical element can receive light. At this time, the second resin layer is By making it thinner than the first resin layer, the effect can be further enhanced.

[0055] More specifically, the refractive index of the light emitted by the light-emitting element with respect to the wavelength of light (hereinafter also simply referred to as refractive index) (u) Select materials such that the second substrate is the highest and the first resin layer is the lowest. This is preferable. In this case, the refractive index of the second substrate is set to 1.5 or more and 2.0 or less, and the first tree It is preferable that the refractive index of the lipid layer be between 1.3 and 1.6. If possible, a second substrate The refractive index may be higher than 2.0. Also, if possible, the refractive index of the first resin layer may be 1. It can be set lower than 3.

[0056] Furthermore, by arranging the light-receiving elements at a high density, it becomes possible to capture even clearer images. Specifically, the array pitch of the photodetectors is set to 400 μm or less, preferably 200 μm or less. More preferably 150 μm or less, even more preferably 120 μm or less, even more preferably The particle size should be 100 μm or less, more preferably 50 μm or less. A smaller sequence pitch is preferable. However, it can be, for example, 1 μm or more, 10 μm or more, or 20 μm or more.

[0057] Furthermore, a functional layer having a third resin layer is provided between the second substrate and the second resin layer. This is possible. The third resin layer is thinner than the second substrate and is thinner than the first resin layer and It is preferable to use a material that is thicker than the second resin layer. Furthermore, the third resin layer is made of the second base It is preferable to use a material with a lower refractive index than that of the plate.

[0058] Functional layers include, for example, polarizing plates (including circular polarizing plates), light-gathering films, and microlenses. Optical components such as rays can be used.

[0059] Alternatively, a touch sensor panel may be used as the functional layer. The types of touch sensors that can be used include resistive, capacitive, infrared, and electromagnetic induction. Various methods can be employed, such as surface acoustic wave methods. In particular, as a touch sensor, static It is preferable to use a capacitance-type touch sensor. When using a touch sensor, the function The layers consist of a third resin layer and a third resin layer provided on one surface of the third resin layer, which functions as an electrode. The configuration may include one or more conductive layers.

[0060] Furthermore, a fourth resin layer may be provided between the functional layer and the second substrate. Furthermore, it is preferable to use a material that is thinner than the second substrate and functional layer for the fourth resin layer. Furthermore, it is preferable that the fourth resin layer be made of a material with a lower refractive index than the second substrate.

[0061] Below, we will explain more specific examples with reference to the diagrams.

[0062] [Configuration Example 1] Figure 1 shows a schematic cross-sectional view of a display device 10 according to one embodiment of the present invention.

[0063] The display device 10 consists of a substrate 11, a substrate 12, a light-receiving element 20, a light-emitting element 30, a resin layer 13, and a resin It has a resin layer 14, a light-shielding layer 25, an insulating layer 41, etc.

[0064] The light-receiving element 20 and the light-emitting element 30 are provided on the substrate 11. The resin layer 13 is light-receiving The resin layer 14 is provided covering the element 20 and the light-emitting element 30. The resin layer 14 is provided covering the resin layer 13 and the substrate 1 It is provided between 2. The light-shielding layer 25 is provided between resin layer 13 and resin layer 14. Yes, they are.

[0065] The light-emitting element 30 has the function of emitting light 51 towards the substrate 12. The light-receiving element 20 is on the substrate It has the function of receiving light 52 that is incident from side 12.

[0066] The light-emitting element 30 is, for example, one of red (R), green (G), or blue (B). It can be a light-emitting element that emits a single light. Alternatively, it can emit white (W), yellow (Y), or other light. It may be a light-emitting element that emits light. The light-emitting element 30 has an emission spectrum of 2 or It may have an upper peak.

[0067] The light-receiving element 20 includes a conductive layer 21 that functions as a pixel electrode, a photoelectric conversion layer 22, and a common electrode. It has a conductive layer 23 that functions as a conductive layer. The photoelectric conversion layer 22 has at least an active layer. The conductive layer 21 is provided on the substrate 11. The insulating layer 41 covers the edges of the conductive layer 21. The photoelectric conversion layer 22 is provided on the conductive layer 21 and the insulating layer 41. The conductive layer 23 is provided on the photoelectric conversion layer 22 and the insulating layer 41.

[0068] The light-emitting element 30 includes a conductive layer 31, an EL layer 32, and a common electrode, which function as pixel electrodes. It has a conductive layer 23 that functions as a conductive layer. The EL layer 32 has at least an emissive layer. Conductive layer 31 It is provided on the substrate 11. The insulating layer 41 is provided covering the edge of the conductive layer 31. The EL layer 32 is provided on the conductive layer 31 and the insulating layer 41. The conductive layer 23 is It is provided on the EL layer 32 and the insulating layer 41.

[0069] Here, it is preferable that the conductive layer 21 and the conductive layer 31 are provided on the same surface on the substrate 11. Furthermore, it is preferable that the conductive layer 21 and the conductive layer 31 are formed by processing the same conductive film. Furthermore, the conductive layer 23 overlaps with the conductive layer 21 via the photoelectric conversion layer 22, and the EL layer It has a portion that overlaps with the conductive layer 31 via 32. With this configuration, light receiving The element 20 and the light-emitting element 30 are manufactured using a common process, except for the photoelectric conversion layer 22 and the EL layer 32. This makes it possible to reduce manufacturing costs.

[0070] Figure 1 shows an example in which conductive layers 21 and 31 are directly provided on the substrate 11. However, between the conductive layer 21 and the conductive layer 31 and the substrate 11, there are insulating layers, wiring, electrodes, and transients. It is preferable that the stand, capacity, etc., are appropriately provided.

[0071] The resin layer 13 is provided covering the conductive layer 23. The resin layer 13 is provided covering the light-receiving element 20 and It functions as a protective layer to protect the light-emitting element 30. Note that the resin layer 13 and the conductive layer 23 A protective layer containing an inorganic insulating material may be further provided between them.

[0072] The light-shielding layer 25 is provided on the resin layer 13. The light-shielding layer 25 is provided when light is incident from the substrate 12 side. It has the function of blocking a portion of the incoming light and controlling the range of light received by the light-receiving element 20.

[0073] The resin layer 14 functions as an adhesive layer for bonding the resin layer 13 and the substrate 12. .

[0074] Here, the light-shielding layer 25 has an opening that overlaps with the light-receiving area of ​​the light-receiving element 20. In a plan view, it is positioned inside the light-receiving area of ​​the light-receiving element 20. This is preferable.

[0075] Figure 1 shows the width W of the light-receiving area of ​​the light-receiving element 20. PD The width W of the opening in the light-shielding layer 25. PH The relationship This shows the relationship. The light-receiving region of the light-receiving element 20 is covered by the insulating layer 41 on the conductive layer 21. It can be considered a non-existent region. That is, the width W of the light-receiving region of the light-receiving element 20 in a cross-sectional view. PD This can be rephrased as the length of the straight line connecting the ends of the pair of insulating layers 41 on the conductive layer 21. It is possible. Or, the width W of the light-receiving area. PD The conductive layer 21 and the photoelectric conversion layer 22 are in contact. This can also be described as the breadth of the domain.

[0076] As shown in FIG. 1, an opening of the light-shielding layer 25 is positioned inside the light-receiving area of the light-receiving element 20. Preferably, they are provided so that... The width W PD With respect to the width W PH Reducing the width W makes it possible to narrow the range in which the light-receiving element 20 can receive light, enabling the capture of a clear image. On the other hand, if the width W PH is too small, the amount of light reaching the light-receiving element 20 decreases, necessitating an increase in the exposure time. Therefore, the width W PH can be set to an appropriate width according to the sensitivity of the light-receiving element 2 0.

[0077] Here, let the thickness of the resin layer 13 be thickness T R1 and the thickness of the resin layer 14 be thickness T R2 Also, for the substrate 12 let the thickness be thickness T S If these thicknesses are not uniform, then as the above thickness, at least the thickness in the portion overlapping the light-receiving area of the light-receiving element 20 will be used. Also, The thickness T R1 of the resin layer 13 is the distance from the upper surface of the conductive layer 23 on the conductive layer 21 to the upper surface of the resin layer 13 .

[0078] The thickness T S of the substrate 12 is R1 preferably greater than the thickness T R2 of the resin layer 13 and the thickness T of the resin layer 14. The greater the thickness T S of the substrate 12, the higher the mechanical strength can be. For example, the thickness T S is 0.1 mm or more, preferably 0.2 mm or more, more preferably 0. 5 mm or more, even more preferably 0.7 mm or more, and 5 mm or less, preferably 3 mm or less, more preferably 2 mm or less. Typically, 0.5 mm, 0.7 It can be mm, 1.0 mm, 1.3 mm, or 1.5 mm.

[0079] Thickness T of resin layer 13 R1 The thickness T of the resin layer 14 is R2 A thickness greater than the resin is preferable. The thicker the layer 13, the greater the distance between the light-receiving element 20 and the light-shielding layer 25. This allows the imaging range of a single light-receiving element 20 to be narrowed, enabling the capture of clear images. It becomes possible.

[0080] Here, the thickness T of the resin layer 13. R1 The width W of the light-receiving area of ​​the light-receiving element 20 is shown. PD Same as, also It is preferable that it is larger than this. For example, width W PD Thickness T R1 The ratio (T R1 / W PD ) is 1 or more, preferably 1.2 or more, more preferably 1.5 or more, even more preferably Or 2.0 or higher, 10 or less, preferably 8 or less, more preferably 6 or less, Preferably, it can be set to 5 or less.

[0081] Thickness T of resin layer 13 R1 For example, 1 μm or more, preferably 3 μm or more, more preferably The particle size is 5 μm or larger, more preferably 10 μm or larger, and 200 μm or smaller, preferably 1 The particle size should be 00 μm or less, more preferably 70 μm or less, and even more preferably 50 μm or less. This is possible. Typically, the thickness can be around 20 μm, 30 μm, or 40 μm. can.

[0082] For example, the width W of the opening of the light-shielding layer 25 PH and the width W of the light-receiving area of ​​the light-receiving element 20 PD are equal, Furthermore, the thickness T of the resin layer 13 R1and the width W of the light-receiving area of ​​the light-receiving element 20 PD If they are equal, light shielding The maximum incident angle of light reaching the light-receiving area of ​​the photodetector 20 through the aperture of layer 25 is 45 degrees. Yes. If the maximum value of the incident angle is sufficiently greater than 45 degrees (for example, 50 degrees or more, or (If the temperature is 60 degrees or higher), light that totally reflects internally through the substrate 12, resin layer 14, etc., is incident and imaged. There is a risk that the contrast of the image will be reduced. Therefore, the maximum value of the above incidence angle The width W of the opening in the light-shielding layer 25 should be 45 degrees or less. PH , or the thickness T of the resin layer 13 R1 It is preferable to adjust the following:

[0083] Thickness T of resin layer 13 R1 The width W of the light-receiving area of ​​the light-receiving element 20 is shown. PD The larger the relative to, As the maximum incident angle approaches 0 degrees, the imaging range of one photodetector 20 can be narrowed. Therefore, it is preferable. Therefore, the thickness T of the resin layer 13 R1 The thicker the better, but productivity must be considered. Then, as described above, the width W of the light-receiving area of ​​the light-receiving element 20 PD 10 times or less, preferably 8 times The following can be more preferably 6 times or less, and even more preferably 5 times or less.

[0084] Here, the refractive index of the resin layer 13 with respect to the wavelength of the light 51 emitted by the light-emitting element 30 is n R1 , The refractive index of the resin layer 14 for that wavelength is n R2 The refractive index of the substrate 12 for that wavelength is n S The wavelength of light 51 is the highest peak in the spectrum of light 51. This refers to the wavelength, or the refractive index for light with a wavelength of 550 nm.

[0085] Refractive index n of substrate 12 SThe refractive index n of the resin layer 13 R1 , and the refractive index n of the resin layer 14 R2 It is preferable that it be higher than this. This narrows the imaging range of one light-receiving element 20. This makes it possible to obtain clear images even when the substrate 12 is thick. Refractive index n S For example, 1.5 or more, preferably 1.55 or more, more preferably 1.6 or more. The above can be 2.0 or less, 1.98 or less, or 1.96 or less. , refractive index n of substrate 12 S It can be set higher than 2.0 if possible.

[0086] Examples of substrates 12 include barium borosilicate glass and aluminoborosilicate glass. Glass substrates, quartz substrates, sapphire substrates, etc. can be used. In addition, titanium, i High refractive index glass containing tuffium, niobium, lanthanum, lead, bismuth, gadolinium, etc. Alternatively, a high refractive index resin material may be used.

[0087] Refractive index n of resin layer 13 R1 The refractive index n of the substrate 12 S The greater the difference, the more refraction is utilized. It is preferable to further narrow the imaging range of one light-receiving element 20. For example, the refractive index of the resin layer 13 Folding rate n R1 is 1.3 or higher, 1.35 or higher, or 1.4 or higher, and 1.6 or lower. The ratio can be 1.58 or less, more preferably 1.56 or less. 13 refractive index n R1 It can be lower than 1.3 if possible.

[0088] Refractive index n of resin layer 14 R2 is, refractive index n R1 The above, refractive index n S The following range For example, by using the same material for resin layer 14 as for resin layer 13, the refractive index can be similar. It may also be a resin layer having [a certain characteristic]. Note that even if the material is the same, different refractories may be formed depending on the method of formation. Since it may show a folding ratio, in that case the refractive index n of the resin layer 14 R2 The resin layer 13 Folding rate n R1 It is preferable to adjust it so that it does not fall below [a certain value]. Note that the resin layer 14 is sufficiently thin. In the case of (for example, the thickness T of substrate 12) S In cases where the amount is less than one-tenth of the amount, the resin layer 14 is covered with the resin layer 13 In some cases, a material with a lower refractive index may be used.

[0089] The resin layers 13 and 14 are acrylic resin, epoxy resin, and polypropylene, respectively. Polyamide resins (nylon, aramid, etc.), polyamide-imide resins, benzos Clobutene resin, phenolic resin, polyethylene terephthalate (PET), polyethylene Polyester resins such as lennaphthalate (PEN), polyacrylonitrile resin, polymer Chill methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PE) S) Resin, polysiloxane resin, cycloolefin resin, polystyrene resin, polyurethane Polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene Using fluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. This can be done. Alternatively, a precursor of the above-mentioned resin may be used.

[0090] This configuration provides a display with high mechanical strength and the ability to capture clear images. We can provide an apparatus or imaging apparatus.

[0091] [Example of pixel configuration] As described above, one aspect of the present invention is a plurality of light-receiving elements arranged in a matrix, Images can be captured. Furthermore, multiple light-emitting elements arranged in a matrix, An image can be displayed. A single pixel of the display device can be colored, for example, red (R), green, etc. By arranging three light-emitting elements of (G) or blue (B), a full-color display device can be created. It is possible. Below, we will describe an example of pixels found in a display device.

[0092] [Example of pixel configuration] Figure 2A shows an example of the configuration of pixel 40. Pixel 40 consists of a light-receiving element 20, a light-emitting element 30R, and a light-emitting element. It has an optical element 30G and a light-emitting element 30B. The light-emitting element 30R emits red light. The light-emitting element 30G is a light-emitting element that emits green light, and the light-emitting element 30B is a light-emitting element that emits blue light. It is a light-emitting element that emits light.

[0093] In this example, the light-receiving element 20 and each light-emitting element are arranged with the same array pitch. However, these may be arranged at different array pitches. For example, the light-receiving element 20 may be arranged at each light-emitting element. You can arrange them with a smaller array pitch than this, or with a larger array pitch than this. This may be done. In this case, the array pitch of the light-receiving elements 20 may be an integer multiple of the array pitch of each light-emitting element. Alternatively, the array pitch of each light-emitting element may be set to an integer multiple of the array pitch of the light-receiving element 20. It is preferable.

[0094] Furthermore, this example provides one light-emitting element and one light-receiving element 20 for each pixel. Although this has been shown, multiple light-emitting elements of the same color may be provided in a single pixel, or multiple light-receiving elements 20 may be provided. It may be established.

[0095] Furthermore, although we have shown an example here where a single pixel is equipped with a light-emitting element that emits light of a different color, When displaying colors, or when using light-emitting elements solely as light sources for imaging, A structure having one or more light-emitting elements that emit light of the same color in each pixel, and one or more light-receiving elements. It may also be configured as follows. Alternatively, the monochromatic light-emitting element and the light-receiving element 20 may be arranged independently in different configurations. They can also be arranged in a matrix pattern using pitch.

[0096] Figure 2A shows 40 pixels arranged in three rows (horizontal direction) and two columns (vertical direction). The light-receiving element 20 and the light-emitting element 30G are arranged alternately in the row direction. The light-emitting elements 30R are arranged alternately in the row direction. The light-receiving elements 20 and the light-emitting elements 30B are arranged in a row. They are arranged alternately in the direction. Note that the configuration is not limited to that shown in Figure 2A, and the photodetector 20, light emitter The child 30R, light-emitting element 30G, and light-emitting element 30B are each interchangeable in their respective positions. .

[0097] Here, the pixels 40 are arranged in the row and column directions with a pitch P P They are arranged in this way. Therefore The light-receiving element 20, the light-emitting element 30R, the light-emitting element 30G, and the light-emitting element 30B are each Array pitch P in the direction and column direction P They are arranged in this way.

[0098] The pixel 40a shown in Figure 2B consists of a light-emitting element 30R, a light-emitting element 30G, and a light-emitting element in the row direction. 30B is arranged in a row, and the light-receiving element 20 is arranged in a different row from these. In 40a as well, the light-emitting element 30R, light-emitting element 30G, and light-emitting element 30B are, respectively Array pitch P in the row and column directions P They are arranged in this way.

[0099] [Regarding the imaging range of the light-receiving element] Figure 2C shows a schematic cross-sectional view of a region containing multiple pixels 40. As an example, in Figure 2A, the region including the light-receiving element 20 and the light-emitting element 30G is cut in the row direction. This shows a schematic cross-sectional view of the result.

[0100] In Figure 2C, for simplicity, the light-receiving element 20 and the light-emitting element 30G are each shown as rectangles. As shown in Figure 2C, the light-receiving element 20 and the light-emitting element 30G have, respectively, an array pitch. P P They are arranged in this way. In Figure 2C, the light-receiving element 20 and the light-emitting element 30G are arranged at equal intervals. It is.

[0101] Here, we will explain the imaging range of a single light-receiving element 20. do.

[0102] Light incident from the top of the substrate 12 is refracted at the interface between the substrate 12 and the resin layer 14. At that time, since the refractive index of the resin layer 14 is lower than that of the substrate 12, incident light from the substrate 12 into the resin layer 14 The angle of refraction becomes larger with respect to the angle of incidence. Also, the light that passes through the resin layer 14 is... Refracts at the interface between 14 and the resin layer 13. If the refractive index of the resin layer 13 is lower than that of the resin layer 14... As a result, the angle of refraction of light incident from resin layer 14 to resin layer 13 becomes larger with respect to the angle of incidence. .

[0103] The maximum angle of incidence of light incident on the light-receiving element 20 is determined by the width of the light-receiving area of ​​the light-receiving element 20 and the light-shielding area. The width of the aperture of layer 25 and the thickness of the resin layer 13 (distance between the light-receiving element 20 and the light-shielding layer 25) It is largely determined. Specifically, the edge of the light-receiving area of ​​the light-receiving element 20 and the area located on the opposite side. A straight line (shown by a dashed line) connecting the edge of the light-shielding layer 25 and perpendicular to the light-receiving surface of the light-receiving element 20, and The angle formed with a straight line (indicated by a two-dot chain line) is the maximum value of the incident angle of light that can enter the light receiving element 20. It becomes the value.

[0104] The region surrounded by the two dashed-dotted lines shown in FIG. 2C is the imaging range of the light receiving element 20 when the resin layer 13, the resin layer 14, and the substrate 1 2 have the same refractive index and refraction does not occur at their interfaces. It corresponds to the imaging range of the light receiving element 20.

[0105] The region W shown in FIG. 2C S corresponds to the imaging range of one light receiving element 20 on the upper surface of the substrate 12. In this way, among the substrate 12, the resin layer 13, and the resin layer 14, the thickest substrate 12 located on the imaging surface side uses a material with a higher refractive index than the resin layer 13 and the resin layer 14, and the resin layer 13 closest to the light receiving element 20 uses a material with a lower refractive index than the substrate 12 and the resin layer 14. By doing so, it becomes possible to suitably narrow the imaging range of one light receiving element 20. As a result, it becomes possible to capture a clear image.

[0106]

[0107] 〔Regarding imaging〕 Hereinafter, imaging of an object in contact with the outer surface of the substrate 12 will be described.

[0107] FIG. 3A shows a schematic cross-sectional view of the display device 10 and a finger 50 as an object in contact with the substrate 12 of the display device 10. In FIG. 3A, only the light receiving element 20 is shown for simplicity, and the light shielding layer 25 and the light emitting element are omitted. The light receiving elements 20 are arranged at an array pitch P P P

[0108] Fingerprints are formed on the surface of the finger 50 by concave and convex portions. As shown in FIG. 3A, when the finger 50 touches the substrate 12, the convex portions of the finger 50 come into contact with the substrate 12, and the concave portions do not. The display By separating the contact area and non-contact area from the image captured by the device 10, the fingerprint can be obtained. The pattern can be obtained.

[0109] The distance between the protrusions of finger 50 is the pitch P. F The array pitch P of the light-receiving element 20 is as follows. P teeth, The distance between the two protrusions of a fingerprint (pitch P) F Preferably, the distance between adjacent recesses and protrusions (P TchP F By using a pitch smaller than half of the original pitch, it is possible to obtain a clear fingerprint image. Yes, it's possible. The pitch of a person's finger is P. F There are individual differences, but generally it is between 300 μm and 500 μm. Typically, it is approximately 460 μm. Therefore, the array pitch of the photodetector 20 is 400 μm or less. Below, preferably 200 μm or less, more preferably 150 μm or less, and even more preferably 12 The particle size should be 0 μm or less, more preferably 100 μm or less, and even more preferably 50 μm or less. A smaller array pitch is preferable, but for example, it should be 1 μm or larger, or 10 μm or larger. It is possible.

[0110] In Figure 3A, region W for one photodetector 20. S This is indicated by a dashed line. The imaging ranges of three adjacent photodetectors 20, including the optical element 20, are shown by dotted lines. As shown in Figure 3A, the imaging ranges of the multiple light-receiving elements 20 have overlapping portions. It's fine if you do that.

[0111] Here, light reflected from a surface or interface can be classified into specular reflection and diffuse reflection. Directed light is highly directional light where the angle of incidence and the angle of reflection coincide, while diffuse reflected light is light whose intensity depends on the angle. It is light with low persistence and low directionality. Unless it is an ideal mirror or an ideal scatterer, Reflected light from a surface or interface includes both specular reflection and diffuse reflection. Here, Of the two components of specular and diffuse reflection, the diffuse reflection component is dominant when light is reflected from surface 50. On the other hand, the light reflected from the interface between the substrate 12 and the atmosphere is predominantly specular.

[0112] When capturing a fingerprint, a light-emitting element (not shown) provided on the substrate 11 is made to emit light, The reflected light from the surface of the plate 12 (or the interface with the finger 50) is received by the light-receiving element 20. This allows imaging. Here, in the recess of the finger 50, the substrate 12 and the finger 50 are in contact. Therefore, since there is no such reflection, the reflection occurs at the interface between the substrate 12 and the air, and specular reflection becomes dominant. On the other hand, At the protruding portion of finger 50, the substrate 12 and finger 50 are in contact, so diffuse reflected light becomes dominant. Therefore, the intensity of light received by the light-receiving element 20 located directly below the concave part (receiving intensity) is the same as that of the convex part It becomes higher than the light-receiving element 20 located directly below it. This creates contrast between the concave and convex parts. It is possible to capture images that possess certain characteristics.

[0113] As shown in Figure 3A, region W is the imaging range of one photodetector 20. S The width is 50 fingers Two cycles of a fingerprint (pitch P) F Make it smaller than twice the size of region W. S The width is pitch P F of When it exceeds 2 times, region W S This means that the finger 50 will contain two or more convex or concave parts. Therefore, it becomes difficult to obtain a clear image.

[0114] Figure 3B shows the light intensity received by each of the 18 light-receiving elements 20 in Figure 3A. An example of (received light intensity) is shown. The horizontal axis in Figure 3B indicates the address of the light-receiving element 20. As shown in FIGS. 3A and 3B, the light receiving intensity of the light receiving element 20 near the concave portion of the finger 50 is high, and the convex portion The light receiving intensity of the light receiving element 20 near it is low.

[0115] The data of the light receiving intensity obtained by the light receiving element 20 is output as analog data and can be digitally converted and handled as a digital value. For example, if it is 8-bit grayscale image data , a smooth fingerprint image can be obtained. Also, not limited to fingerprints, various objects (printed matter, photos, and all other articles) can also be clearly imaged. On the other hand, In biometric authentication such as fingerprint authentication and palmprint authentication, by using image data with a low number of gradations, fingerprints and patterns such as palmprints can be made clearer, and highly accurate authentication can be performed.

[0116] When binarizing the data of the light receiving intensity received by the light receiving element 20, as shown in FIG. 3B, a predetermined threshold intensity I th is set, and binary data can be generated with the threshold intensity I th as the boundary. The threshold intensity I th can be appropriately set based on all the data received by all the light receiving elements 20 For example, it may be the median of the maximum and minimum values of all the data, or the average value. In consideration of the influence of noise, dark current, etc., it is preferable to set the threshold intensity I th to a value higher than the above median or average value. Or, binary data may be generated using data obtained by removing the influence of noise and dark current in advance.

[0117] Next, an example of an image when a fingerprint is imaged will be described. FIG. 3C is a diagram schematically showing the contact portion and non-contact portion between the finger 50 and the substrate 1 2. The contact portion is hatched. Figure 3D shows an example of an image captured using the light-receiving element 20. In Figure 3D, the image is 32 pixels vertically and horizontally. This shows a 48-pixel binarized image. In this way, the pattern reflects the ridges and grooves of the fingerprint. The image can be clearly captured. Also, the array pitch P of the light-receiving element 20 P Make it smaller This allows us to obtain an image that is even smoother than Figure 3D.

[0118] [Configuration Example 2] The following describes an example of a display device with a configuration different from the one described above. Regarding the parts that overlap with the above, you may refer to them, and in some cases, the explanation may be omitted. ru.

[0119] [Configuration Example 2-1] Figure 4 shows a schematic cross-sectional view of the display device 10a. The display device 10a consists of a functional layer 15 and a protective layer The main difference from the display device 10 illustrated in Figure 1 is that it has components such as 42, a conductive layer 43, and a resin layer 16. They are doing it.

[0120] The functional layer 15 is provided between the resin layer 14 and the substrate 12. The resin layer 16 is the functional layer It is provided between 15 and the substrate 12 and has the function of bonding them together. The resin layer 14 is It has the function of bonding the resin layer 13 and the functional layer 15.

[0121] Examples of functional layers 15 include polarizing plates (including circular polarizing plates), light-gathering films, and microlenses. Optical components such as arrays can be used. A circular polarizer can be provided as the functional layer 15. This suppresses external light reflection in the display and improves the display quality. As layer 15, a microlens array having microlenses that overlap with the photodetector 20 is used. By doing so, it becomes possible to effectively narrow the imaging range of one light-receiving element 20, and substrate 1 Making the thickness of 2 even thicker, or making the object visible even when it is far from the surface of substrate 12 This makes it possible to capture clear images.

[0122] Alternatively, a touch sensor panel may be used as the functional layer 15. (Touch sensor panel) The touch sensors installed include resistive, capacitive, infrared, and electromagnetic induction types. Various methods can be employed, such as surface acoustic wave methods. In particular, as a touch sensor It is preferable to use a capacitive touch sensor.

[0123] The functional layer 15 has the function of an optical element and the function of a touch sensor panel. They may also be combined. Alternatively, the functional layer 15 may be a layer that functions as an optical component and a touch sensor. A laminate may be used, which consists of layers that function as a panel.

[0124] The functional layer 15 preferably has a resin layer containing resin.

[0125] The thickness of the functional layer 15 is thickness T. F The functional layer 15 has a resin layer, The thickness of the layer is the thickness T of the functional layer 15. F It can be considered as follows: Thickness T of functional layer 15 F is, Thickness T of plate 12 S It is preferable that it be thinner than [this]. Also, the thickness T of the functional layer 15 F is resin layer 1 Thickness T of 3 R1 , and the thickness T of the resin layer 14 R2 A thicker thickness is preferable.

[0126] Furthermore, the refractive index of the functional layer 15 with respect to the wavelength of the light 51 emitted by the light-emitting element 30 is set to n F Let's assume The refractive index n of the functional layer 15 F The refractive index n of the substrate 12S is preferably lower.

[0127] Further, the thickness of the resin layer 16 is defined as thickness T R3 and the refractive index of the resin layer 16 is defined as n R3 . The resin layer 16's thickness T R3 is preferably thinner than the thickness T S of the substrate 12 and the thickness T F of the functional layer 15. Also, the thickness T of the resin layer 16 is preferably thinner than the thickness T R3 of the resin layer 13. Moreover, the refractive index n R1 of the resin layer 16 is preferably lower than the refractive index n of the substrate 12. R3 The protective layer 42 is provided to cover the conductive layer 23. The protective layer 42 has a function of suppressing the diffusion of impurities such as water from the resin layer 13 or the like to the light receiving element 20 and S the light emitting element 30. The protective layer 42 preferably contains at least an inorganic insulator. Thereby, the diffusion of impurities such as water can be suitably suppressed and the reliability can be enhanced. The protective layer 42 can be, for example, a single layer of an inorganic insulating film or a laminated structure of an organic insulating film and an inorganic insulating film. When an inorganic insulating film is used for the protective layer 42, the refractive index tends to be higher compared with the resin layer 13.

[0128] For this reason, the protective layer 42 is preferably made at least thinner than the resin layer 13. By this, it is possible to suitably suppress the reduction in the amount of light incident on the light receiving element 20 due to the provision of the protective layer 42. The conductive layer 43 is provided on the protective layer 42. The conductive layer 43 is, for example, for a touch sensor of etc. The protective layer 42 can be a single layer of an inorganic insulating film or a laminated structure of an organic insulating film and an inorganic insulating film.

[0129] When an inorganic insulating film is used for the protective layer 42, the refractive index tends to be higher compared with the resin layer 13. Therefore, the protective layer 42 is preferably made at least thinner than the resin layer 13. By this, it is possible to suitably suppress the reduction in the amount of light incident on the light receiving element 20 due to the provision of the protective layer 42. Thereby, the reduction in the amount of light incident on the light receiving element 20 due to the provision of the protective layer 42 can be suitably suppressed.

[0130] The conductive layer 43 is provided on the protective layer 42. The conductive layer 43 is, for example, for a touch sensor ​It can function as wiring or an electrode. The conductive layer 43 overlaps with the light-shielding layer 25. It is preferable that it be provided there. This allows the light reflected from the surface of the conductive layer 43 to reach the photodetector 2 This can suppress the incidence of zero, thereby reducing noise in the captured image. .

[0131] It is preferable that the conductive layer 43 be thinner than the resin layer 13. This allows the resin layer 13 to Because the flatness of the upper surface can be improved, the thickness of the resin layer 14 located on the light-receiving element 20 can be increased. This allows for uniform distribution within the display area, enabling the capture of clear images.

[0132] Furthermore, the conductive layer 43 is not limited to use as wiring for touch sensors. For example, capacitive elements electrodes such as transistors, display elements, and sensor elements, or those electrically connected to them. It can also be used for wiring, etc.

[0133] [Configuration Example 2-2] Figure 5 shows a schematic cross-sectional view of the display device 10b. The display device 10b has a protective layer 17. The above-mentioned display device 1 differs in the following respects: the configuration of the light-shielding layer 25 is different, and it does not have a conductive layer 43. It differs primarily from version 0a.

[0134] The protective layer 17 is provided between the resin layer 13 and the resin layer 14. It has the function of suppressing the diffusion of impurities such as water into the resin layer 13.

[0135] An inorganic insulating film can be used as the protective layer 17. Alternatively, as the protective layer 17, A sheet-like or plate-like member containing resin or inorganic insulator may be used. When a sheet-shaped or plate-shaped member is used, the protective layer 17 is provided opposite the substrate 11. can function as a substrate.

[0136] The light-shielding layer 25 is provided on the surface of the protective layer 17 on the substrate 11 side. The resin layer 13 functions as an adhesive layer that adheres the substrate 1 1 (specifically, the upper surface of the protective layer 42) and the protective layer 17.

[0137] Let the thickness of the protective layer 17 be T B and the refractive index of the protective layer 17 be n B . The thickness T of the protective layer 17 B is preferably thinner than the thickness T S of the substrate 12. Also, the refractive index n B of the protective layer 17 is preferably lower than the refractive index n S of the substrate 12.

[0138] In the display device 10b, the functional layer 15 preferably functions as a touch sensor panel. Hereinafter, the functional layer 15 that functions as a touch sensor panel will be described . .

[0139] FIG. 6A shows a perspective view of a part of the functional layer 15 that functions as a touch sensor panel. The functional layer 15 has a resin layer 55, a plurality of conductive layers 56a, and a plurality of conductive layers 56b. In FIG. 6A, the resin layer 55 is shown by a dashed line.

[0140] The conductive layer 56a has a strip shape extending in one direction. The conductive layer 56b has a strip shape extending in a direction intersecting the conductive layer 5 6a. The plurality of conductive layers 56a and the plurality of conductive layers 5 6b are each arranged at equal intervals.

[0141] For example, in the case of a capacitive mutual capacitance type touch sensor, a pulse signal is applied to either the conductive layer 56a or the conductive layer 5 6b, and an amplifier circuit or the like is connected to the other.

[0142] Figure 6B shows a schematic cross-sectional view of the functional layer 15. The conductive layer 56a is on one side of the resin layer 55. They are arranged side by side. The conductive layer 56b is provided on the other side of the resin layer 55.

[0143] It is preferable to use a light-transmitting conductive film for conductive layers 56a and 56b. For example, metal oxides can be used.

[0144] Alternatively, a mesh-like metal film may be used for conductive layers 56a and 56b. Good. At this time, the light-receiving element 20, light-emitting element 30, etc., in a plan view, the opening of the mesh It is preferable that it be positioned at the mouth. Furthermore, the metal film and the light-shielding layer 25 A configuration that serves both purposes is also acceptable. This increases the distance between the light-shielding layer and the light-receiving element 20. This allows for a narrower imaging range for a single light-receiving element 20, enabling the capture of clearer images. It can be visualized.

[0145] Figure 6C shows a perspective view of a functional layer 15 with a different configuration than described above. The conductive layer 15 includes a resin layer 55, a conductive layer 56a, a conductive layer 56b, a conductive layer 57, and the like.

[0146] The conductive layer 56a and conductive layer 56b are provided on the same plane. b is preferably formed by processing the same conductive film.

[0147] The conductive layer 56a has a plurality of parts having a rhombus-shaped upper surface and parts connecting them. On the other hand, the conductive layer 56b has an island-like shape with a diamond-shaped upper surface. The two conductive layers 56b are electrically connected by a conductive layer 57.

[0148] Figure 6D shows an example of a cross-section of the functional layer 15 shown in Figure 6C.

[0149] The conductive layer 56a and conductive layer 56b are provided on the resin layer 55. In Figure 6D, conductive layer 5 This shows a pair of conductive layers 56b sandwiching 6a. It also shows the conductive layers 56a and 56b covered An insulating layer 58 is provided, and a conductive layer 57 is provided on the insulating layer 58. The conductive layer 57 is In the two openings provided in the insulating layer 58, the conductive layer 56b is electrically connected to each of them. This is continued. As a result, the pair of conductive layers 56b are electrically connected via the conductive layer 57. It is being done.

[0150] Figure 6E shows an example where the conductive layer 57 is positioned closer to the resin layer 55 than the insulating layer 58. A conductive layer 57 is provided on the resin layer 55, and an insulating layer 58 is provided covering the conductive layer 57. Furthermore, conductive layers 56a and 56b are provided on the insulating layer 58. Each layer 56b is electrically connected to the conductive layer 57 at an opening provided in the insulating layer 58. It continues.

[0151] The above is a description of the functional layer 15, which functions as a touch sensor panel.

[0152] The display device illustrated in this embodiment has high mechanical strength and the function of capturing clear images. , and have. For example, the display device is a smartphone, tablet, smartwatch, etc. By applying this to the display (screen) of electronic devices, it becomes highly convenient, multi-functional, and the screen is This makes it possible to create electronic devices that are less prone to damage.

[0153] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., are at least a part of them. This can be combined with other configuration examples or drawings as appropriate.

[0154] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0155] (Embodiment 2) This embodiment describes a display device according to one aspect of the present invention.

[0156] The display unit of a display device according to one aspect of the present invention comprises a light-receiving element (also called a light-receiving device) and a light-emitting element. It has (also called a light-emitting device). The display unit has the function of displaying an image using a light-emitting element. It has. Furthermore, the display unit has the function of capturing images and sensing using a light-receiving element. Having one or both of the above.

[0157] Alternatively, a display device according to one aspect of the present invention comprises a light-receiving element (also called a light-receiving device) and a light-emitting element. The configuration may also include elements.

[0158] First, a display device having a light-receiving element and a light-emitting element will be described.

[0159] The light-receiving element and the light-emitting element can be described in Embodiment 1 by reference.

[0160] When a light-receiving element is used as an image sensor, the display device uses the light-receiving element to capture an image. It is possible. For example, a display device can be used as a scanner.

[0161] An electronic device to which a display device according to one aspect of the present invention is applied uses an image sensor function By doing so, it is possible to acquire data related to biometric information such as fingerprints and palm prints. In other words, display device A biometric authentication sensor can be built into the display unit. By doing so, compared to the case where a biometric authentication sensor is installed separately from the display device, the components of the electronic device This allows for a reduction in the number of points required and enables the miniaturization and weight reduction of electronic devices.

[0162] Furthermore, when a light-receiving element is used as a touch sensor, the display device uses the light-receiving element to detect the target object. It can detect touch operations.

[0163] In one aspect of the present invention, an organic EL element (also called an organic EL device) is used as the light-emitting element. i. Organic photodiodes are used as light-receiving elements. Organic EL elements and organic photodiodes The elements can be formed on the same substrate. Therefore, a display device using organic EL elements... An organic photodiode can be incorporated into the design.

[0164] When fabricating all the layers that make up an organic EL element and an organic photodiode, the film deposition process The number of components becomes enormous. However, organic photodiodes share commonalities with organic EL elements. Because there are many layers that can be configured in a common way, layers that can be configured in a common way can be deposited all at once, thus completing the film deposition process. This can suppress the increase.

[0165] For example, one of the pair of electrodes (the common electrode) is made into a common layer for both the light-receiving element and the light-emitting element. This can be done. Also, for example, a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. It is preferable that at least one of these layers be a common layer for both the light-receiving element and the light-emitting element. Also, for example... For example, the light-receiving element has an active layer and the light-emitting element has a light-emitting layer, but otherwise the light-receiving element and the light-emitting element are different. It is also possible to achieve the same configuration. In other words, the light-emitting layer of the light-emitting element is replaced with the active layer. It is also possible to fabricate a light-receiving element using only this. In this way, the light-receiving element and the light-emitting element are common Having a layer reduces the number of film deposition cycles and masks, and improves the manufacturing process of the display device. This can reduce manufacturing costs. Furthermore, it can reduce existing manufacturing equipment and manufacturing methods for display devices. Using this method, a display device having a light-receiving element can be manufactured.

[0166] Furthermore, the layer common to both the light-receiving element and the light-emitting element has functions in both the light-emitting element and the light-receiving element. The function may differ. In this specification, the components are defined based on the function of the light-emitting element. This is the name given to the hole injection layer. For example, the hole injection layer functions as a hole injection layer in a light-emitting element, and the photodetector In a light-emitting element, it functions as a hole transport layer. Similarly, in a light-emitting element, the electron injection layer functions as a hole transport layer. It functions as an interlayer and as an electron transport layer in the photodetector. It also functions as a light-emitting element. A layer common to the elements is used when the function of the light-emitting element and the function of the light-receiving element are the same. There are also hole transport layers, which function as hole transport layers in both light-emitting and light-receiving elements. The electron transport layer functions as an electron transport layer in both the light-emitting element and the light-receiving element. do.

[0167] Next, a display device having a light-emitting / receiving element and a light-emitting element will be described. Explanations regarding functions, actions, and effects may be omitted.

[0168] In a display device according to one aspect of the present invention, a subpixel exhibiting any of the colors is a substitute for a light-emitting element. The sub-pixels, which have light-emitting and light-receiving elements and exhibit other colors, also have light-emitting elements. It possesses both the function of emitting light (light emission function) and the function of receiving light (light reception function). If a pixel has three subpixels, namely a red subpixel, a green subpixel, and a blue subpixel, The configuration includes at least one subpixel having an light-emitting / receiving element, and the other subpixels having light-emitting elements. Therefore, the display unit of one aspect of the present invention has both the light-receiving and light-emitting elements. It has the function of displaying images using [a specific method / tool].

[0169] By having the light-emitting element serve as both a light-emitting element and a light-receiving element, the number of subpixels included in the pixel can be increased. Without doing so, light-receiving functionality can be added to the pixels. This allows for a reduction in the aperture ratio of each sub-pixel. While maintaining the aperture ratio and resolution of the display device, the display unit of the display device is equipped with an imaging function. One or both of the sensing functions can be added. Therefore, one aspect of the present invention In a display device, a sub-pixel having a light-receiving element is provided in addition to the sub-pixel having a light-emitting element. Compared to conventional methods, this method allows for a higher aperture ratio of pixels and facilitates high-resolution imaging.

[0170] In one aspect of the present invention, a display device has a display unit in which light-emitting and receiving elements and light-emitting elements are arranged in a matrix. The display unit is equipped with an image sensor. It can be used for touch sensors and the like. A display device according to one aspect of the present invention uses a light-emitting element It can be used as a light source for sensors. Therefore, even in dark places, imaging and touch operation are possible. Detection and other processes are possible.

[0171] The light-emitting element can be fabricated by combining an organic EL element and an organic photodiode. It is possible. For example, by adding an active layer of an organic photodiode to the stacked structure of an organic EL element. With this, light-emitting and receiving devices can be fabricated. Furthermore, organic EL elements and organic photodiodes Light-emitting and light-receiving devices fabricated by combining these elements can have a common configuration with organic EL elements, and the layers can be combined into one unit. By forming a thin film, the number of film formation steps can be suppressed.

[0172] For example, one of a pair of electrodes (the common electrode) is connected to a layer common to both the light-emitting and receiving element and the light-emitting element. It is possible to do so. Also, for example, a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. It is preferable that at least one of the layers be a common layer for both the light-receiving and light-emitting elements. For example, the light-receiving element and the light-emitting element have the same configuration except for the presence or absence of the active layer of the light-receiving element. It is also possible to create a light-emitting element by simply adding the active layer of a light-receiving element to a light-emitting element. It can also be manufactured in this way. In this manner, by having the light-emitting and light-receiving elements and the light-emitting element have a common layer, This reduces the number of film deposition cycles and masks required, thereby reducing the manufacturing process and costs of the display device. It is possible to use existing manufacturing equipment and methods for display devices to create light-emitting and light-receiving devices. A display device having the following characteristics can be manufactured.

[0173] Furthermore, the layer of the light-receiving element is used when the light-receiving element functions as a light-receiving element and when it emits light. The function may differ depending on whether it is functioning as an element or not. In this specification, light-emitting and receiving elements are referred to as such. The components are named based on their function when they function as light-emitting elements.

[0174] The display device of this embodiment has a function of displaying an image using a light-emitting element and a light-receiving element. It possesses such properties. In other words, the light-emitting element and the light-receiving element function as display elements.

[0175] The display device of this embodiment has the function of detecting light using a light-emitting and light-receiving device. The element can detect light with a shorter wavelength than the light it emits.

[0176] When the light-emitting and receiving element is used as an image sensor, the display device of this embodiment uses the light-emitting and receiving element It can be used to capture images. Also, when the light-emitting / receiving element is used as a touch sensor, The display device of this embodiment uses a light-emitting and receiving element to detect touch operations on an object. can.

[0177] The light-receiving element functions as a photoelectric conversion element. The light-receiving element has the above configuration of a light-receiving element, It can be fabricated by adding an active layer to the light-receiving element. For example, the light-receiving element may be p The active layer of an n-type or pin-type photodiode can be used.

[0178] In particular, the light-emitting element has an active layer of an organic photodiode having a layer containing an organic compound. It is preferable to use them. Organic photodiodes are easy to make thin, light, and large in area. Furthermore, due to its high degree of freedom in shape and design, it can be applied to various display devices.

[0179] In the following section, a display device according to one aspect of the present invention will be described in more detail with reference to the drawings.

[0180] [Example of display device configuration 1] [Configuration Example 1-1] Figure 7A shows a schematic diagram of the display panel 200. The display panel 200 consists of a substrate 201 and a substrate 202, light receiving element 212, light-emitting element 211R, light-emitting element 211G, light-emitting element 211B, It has a capacity layer 203, etc.

[0181] The light-emitting element 211R, light-emitting element 211G, light-emitting element 211B, and light-receiving element 212 are based It is located between the board 201 and the substrate 202. Light-emitting element 211R, light-emitting element 211G, The optical element 211B emits red (R), green (G), or blue (B) light, respectively. In the following, we will not distinguish between light-emitting elements 211R, 211G, and 211B. In some cases, it may be referred to as light-emitting element 211.

[0182] The display panel 200 has multiple pixels arranged in a matrix. One pixel is It has one or more subpixels. Each subpixel has one light-emitting element. For example, a pixel has This configuration has three subpixels (three colors: R, G, and B, or yellow (Y), cyan (C)). (and magenta (M) three colors, etc.), or a configuration with four subpixels (R, G, B, white) (The four colors of (W), or the four colors of R, G, B, Y, etc.) can be applied. Furthermore, pixels receive It has an optical element 212. The light-receiving element 212 may be provided at all pixels, or at some of them. They may be provided in the pixels. Also, one pixel may have multiple light-receiving elements 212. good.

[0183] Figure 7A shows how a finger 220 touches the surface of the substrate 202. (Light-emitting element 211) A portion of the light emitted by G is reflected at the contact point between the substrate 202 and the finger 220. A portion of the light is incident on the light-receiving element 212, causing the finger 220 to come into contact with the substrate 202. This can be detected. In other words, the display panel 200 functions as a touch panel. It is possible.

[0184] The functional layer 203 drives the light-emitting elements 211R, 211G, and 211B. It has a circuit and a circuit for driving the light-receiving element 212. The functional layer 203 has a switch, A transistor, capacitor, wiring, etc. are provided. Note that the light-emitting element 211R and light-emitting element 211G When the light-emitting element 211B and the light-receiving element 212 are driven in a passive matrix manner. The configuration may also be one that does not include switches, transistors, etc.

[0185] The display panel 200 preferably has a function to detect the fingerprint of the finger 220. (Figure 7B) This diagram schematically shows an enlarged view of the contact area when the finger 220 is in contact with the substrate 202. Figure 7B also shows alternating arrangements of light-emitting elements 211 and light-receiving elements 212. .

[0186] Fingerprints are formed on finger 220 by recesses and protrusions. Therefore, as shown in Figure 7B The raised part of the fingerprint is touching the substrate 202.

[0187] Light reflected from a surface or interface can be classified into specular reflection and diffuse reflection. Specularly reflected light is... Diffuse reflected light is highly directional light where the angle of emission and the angle of reflection coincide, and its intensity has low angular dependence. It is light with low directionality. The light reflected from the surface of finger 220 is a combination of specular reflection and diffuse reflection. The diffuse reflection component becomes dominant. On the other hand, the light reflected from the interface between the substrate 202 and the atmosphere is The specular reflection component becomes dominant.

[0188] Reflected from the contact or non-contact surface between finger 220 and substrate 202, and located directly beneath them. The intensity of the light incident on the light-receiving element 212 is the sum of specular reflection and diffuse reflection. As described above, the finger 220 does not come into contact with the substrate 202 at the recess of the finger 220, resulting in specular reflection. Light (indicated by solid arrows) becomes dominant, and these come into contact at the convex portion, from finger 220 Diffuse reflected light (indicated by the dashed arrow) becomes dominant. Therefore, the light receiving area located directly below the recess is... The intensity of light received by element 212 is higher than that of the light-receiving element 212 located directly below the protrusion. This allows for the imaging of fingerprints from 220 fingers.

[0189] The spacing between the light-receiving elements 212 is the distance between two protrusions of the fingerprint, preferably between adjacent recesses. By setting the spacing smaller than the distance between the protrusions, a clear image of the fingerprint can be obtained. The distance between the recesses and protrusions of a human fingerprint is generally between 150 μm and 250 μm, for example. For example, the spacing between the light-receiving elements 212 is 400 μm or less, preferably 200 μm or less, more preferably The thickness is 150 μm or less, more preferably 120 μm or less, and even more preferably 100 μm. The spacing should be less than or equal to m, more preferably less than or equal to 50 μm. Smaller spacing is preferable, however The particle size can be 1 μm or larger, 10 μm or larger, or 20 μm or larger.

[0190] Figure 7C shows an example of a fingerprint image captured by the display panel 200. Figure 7C shows the imaging range 2 Within 23, the outline of finger 220 is shown with a dashed line, and the outline of contact portion 221 is shown with a dashed line. Contact Within section 221, the difference in the amount of light incident on the light-receiving element 212 results in high contrast. It is possible to capture a fingerprint 222.

[0191] The display panel 200 can also function as a touch panel or a pen tablet. This can be done. Figure 7D shows the tip of the stylus 225 in contact with the substrate 202, and the breakage This shows the object being slid in the direction of the arrow.

[0192] As shown in Figure 7D, the diffusion of the stylus at the contact surface between the tip of the stylus 225 and the substrate 202 When diffusely reflected light is incident on the light-receiving element 212 located in the part that overlaps with the contact surface, The position of the tip of the Iras 225 can be detected with high precision.

[0193] Figure 7E shows an example of the trajectory 226 of the stylus 225 detected by the display panel 200. The display panel 200 can detect the position of the object to be detected, such as the stylus 225, with high positional accuracy. Because this is possible, it is also possible to perform high-resolution rendering in drawing applications, etc. Furthermore, this differs from cases where capacitive touch sensors, electromagnetic induction type styluses, etc., are used. Therefore, even highly insulating objects can be detected, and the tip of the stylus 225 The material of the end is not specified, and various writing instruments (such as brushes, glass pens, quill pens, etc.) can be used. It is also possible.

[0194] Here, Figures 7F to 7H show an example of a pixel applicable to the display panel 200.

[0195] The pixels shown in Figures 7F and 7G are red (R) light-emitting elements 211R and green (G It has a light-emitting element 211G, a blue (B) light-emitting element 211B, and a light-receiving element 212. The elements are, respectively, light-emitting element 211R, light-emitting element 211G, light-emitting element 211B, and light-receiving element. It has a pixel circuit for driving 212.

[0196] Figure 7F shows a 2x2 matrix in which three light-emitting elements and one light-receiving element are arranged. This is an example. Figure 7G shows three light-emitting elements arranged in a row, with one horizontally elongated light-receiving element below them. This is an example where element 212 is placed.

[0197] The pixel shown in Figure 7H is an example having a white (W) light-emitting element 211W. Here, 4 Two light-emitting elements are arranged in a row, and a light-receiving element 212 is positioned below them.

[0198] Furthermore, the pixel configuration is not limited to the above, and various arrangement methods can be adopted.

[0199] [Configuration Example 1-2] The following describes a device comprising a light-emitting element that emits visible light, a light-emitting element that emits infrared light, and a light-receiving element. Let's explain an example of the configuration.

[0200] The display panel 200A shown in Figure 8A has the same configuration as illustrated in Figure 7A, plus a light-emitting element 211 It has IR. The light-emitting element 211IR is a light-emitting element that emits infrared light (IR). The light-receiving element 212 receives at least infrared light (IR) emitted by the light-emitting element 211IR. It is preferable to use an element capable of doing so. Furthermore, as the light-receiving element 212, visible light and infrared light It is more preferable to use an element that can receive both types of light.

[0201] As shown in Figure 8A, when the finger 220 touches the substrate 202, light is emitted from the light-emitting element 211IR. The infrared light (IR) is reflected by the finger 220, and a portion of the reflected light is incident on the photodetector 212. By doing so, the position information of finger 220 can be obtained.

[0202] Figures 8B to 8D show examples of pixels applicable to the display panel 200A.

[0203] Figure 8B shows three light-emitting elements arranged in a row, with light-emitting element 211IR and a light-receiving element below them. Figure 8C shows an example where element 212 and element 211I are arranged side by side. Four light-emitting elements, including R, are arranged in a row, and a light-receiving element 212 is positioned below them. This is an example.

[0204] Furthermore, Figure 8D shows three light-emitting elements on all four sides of the light-emitting element 211IR, and a photodetector element. This is an example where child 212 is positioned.

[0205] Furthermore, in the pixels shown in Figures 8B to 8D, the light-emitting elements interact with each other, and with the light-emitting elements and the light-receiving elements. This means that their respective positions are interchangeable.

[0206] [Configuration Examples 1-3] The following describes a light-emitting element that emits visible light and a light-receiving element that emits and receives visible light. Let's explain an example of a configuration that includes a child.

[0207] The display panel 200B shown in Figure 9A consists of light-emitting element 211B, light-emitting element 211G, and a transmitter / receiver. It has an optical element 213R. The light-emitting element 213R is a light-emitting element that emits red (R) light. It has the function of receiving light and the function of a photoelectric conversion element that receives visible light. In Figure 9A, This example shows how the light-emitting element 213R receives green (G) light emitted by the light-emitting element 211G. Furthermore, the light-receiving element 213R receives the blue (B) light emitted by the light-receiving element 211B. Alternatively, the light-receiving element 213R may receive both green and blue light.

[0208] For example, the light-receiving element 213R is preferable to receive light with a shorter wavelength than the light it emits. It seems so. Alternatively, the light-receiving element 213R emits light with a longer wavelength than the light it emits (for example, infrared light). The device may also be configured to receive light. The light-receiving element 213R has a wave amplitude similar to the light it emits. It is also possible to configure it to receive light, but in that case it will also receive the light it emits itself, causing light emission. There is a risk that the efficiency will decrease. Therefore, the light-emitting element 213R has an emission spectrum It is preferable to configure the peaks so that they do not overlap with the peaks in the absorption spectrum as much as possible. It seems so.

[0209] Furthermore, the light emitted by the light-emitting element here is not limited to red light. The light used is not limited to a combination of green and blue light. For example, as a light-emitting / receiving device, An element that emits green or blue light and receives light of a different wavelength than the light it emits, It is possible.

[0210] In this way, the light-emitting element 213R serves as both a light-emitting element and a light-receiving element, The number of elements arranged in the image can be reduced. Therefore, it is possible to achieve higher resolution, higher aperture ratio, and higher image quality. This makes it easier to perform tasks such as degree conversion.

[0211] Figures 9B to 9I show an example of a pixel applicable to the display panel 200B.

[0212] Figure 9B shows the light-emitting element 213R, light-emitting element 211G, and light-emitting element 211B arranged in a row. This is an example of a row. Figure 9C shows light-emitting elements 211G and 211B alternating vertically. This is an example where the elements are arranged in this way, with the light-emitting / receiving element 213R positioned next to them.

[0213] Figure 9D shows three light-emitting elements (light-emitting element 211G, light-emitting element 2) arranged in a 2x2 matrix. This is an example where 11B and a light-emitting element 211X are arranged with one light-receiving element. 211X is an element that emits light other than R, G, and B. Other than R, G, and B light is white light. Color (W), Yellow (Y), Cyan (C), Magenta (M), Infrared (IR), Ultraviolet (UV) Examples of light include infrared light. When the light-emitting element 211X emits infrared light, the receiving light-emitting element emits infrared light. It is preferable that it has the function to detect light, or the function to detect both visible light and infrared light. The wavelength of light detected by the light-emitting / receiving element can be determined according to the sensor's application.

[0214] Figure 9E shows two pixels. There is one region containing three elements enclosed by a dotted line. These correspond to pixels. Each pixel is a light-emitting element 211G, a light-emitting element 211B, and a light-receiving element. It has a child 213R. In the left pixel shown in Figure 9E, the light-emitting element is in the same row as the light-receiving element 213R. Child 211G is positioned, and light-emitting element 211B is positioned in the same row as light-receiving element 213R. In the right pixel shown in Figure 9E, the light-emitting element 211G is positioned in the same row as the light-emitting element 213R. Furthermore, the light-emitting element 211B is arranged in the same row as the light-emitting element 211G. In the basic layout, in both odd and even rows, the light-emitting element 213R and the light-emitting element are present. 211G and light-emitting elements 211B are arranged repeatedly, and in each column, odd number In the rows and even-numbered rows, light-emitting or light-receiving elements of different colors are arranged.

[0215] Figure 9F shows four pixels to which a pentile array has been applied, and two adjacent pixels The element has a light-emitting or light-receiving element that emits two different colors of light in combination. 9F shows the top surface shape of the light-emitting element or light-receiving element.

[0216] The upper left and lower right pixels shown in Figure 9F have a light-emitting element 213R and a light-emitting element 211G. The upper right and lower left pixels also have light-emitting elements 211G and 211B. In other words, in the example shown in Figure 9F, each pixel is provided with a light-emitting element 211G.

[0217] The top surface shape of the light-emitting element and the light-receiving element is not particularly limited and can be a circle, ellipse, polygon, or rounded polygon. It can be rectangular, etc. In Figure 9F, etc., the upper surface shape of the light-emitting element and the light-receiving element is as follows: An example of a square (rhombus) tilted at approximately 45 degrees is shown. Note that each color of light-emitting and receiving element is shown. The top surface shapes of the optical elements may differ from one another, or they may be the same for some or all colors. good.

[0218] Furthermore, the size of the light-emitting region (or light-receiving region) of each color light-emitting and light-receiving element is mutual. They may be different, or some or all of the colors may be the same. For example, in Figure 9F The area of ​​the light-emitting region of the light-emitting element 211G provided in each pixel is the same as the area of ​​the light-emitting region of other elements ( It may be made smaller than the light-receiving area.

[0219] Figure 9G is a modified version of the pixel arrangement shown in Figure 9F. Specifically, the configuration of Figure 9G is the same as that of Figure 9F. This can be obtained by rotating the configuration of F by 45 degrees. In Figure 9F, there are two elements in one pixel. As explained above, as shown in Figure 9G, one pixel is composed of four elements. It can also be interpreted as them being present.

[0220] Figure 9H shows a modified version of the pixel arrangement shown in Figure 9F. The upper left pixel and the lower right pixel shown in Figure 9H The element has a light-receiving element 213R and a light-emitting element 211G. Also, the upper right pixel and the lower left pixel are It has a light-emitting element 213R and a light-emitting element 211B. That is, in the example shown in Figure 9H, each Each pixel is provided with a light-emitting element 213R. Therefore, the configuration shown in Figure 9H can perform imaging with higher resolution compared to the configuration shown in Figure 9F. This allows for, for example, improving the accuracy of biometric authentication.

[0221] Figure 9I shows a modified version of the pixel array shown in Figure 9H, which is achieved by rotating the pixel array by 45 degrees. This is the configuration obtained by [the combination of the two components].

[0222] In Figure 9I, one pixel is composed of four elements (two light-emitting elements and two light-receiving elements). We will explain this as something that happens. In this way, one pixel is a light-receiving element that has a light-receiving function. Having multiple children allows for high-resolution imaging. Therefore, biometric authentication This can improve accuracy. For example, the resolution of the image can be set to the square root of 2 times the resolution of the display. It is possible.

[0223] A display device to which the configuration shown in Figure 9H or Figure 9I is applied has p elements (where p is an integer of 2 or more) A first light-emitting element, q (where q is an integer greater than or equal to 2) second light-emitting elements, and r (where r is greater than p) elements. It has a light-emitting and receiving element (a large integer greater than q), and p and r satisfy r=2p. p, q, and r satisfy r = p + q. One of the first and second light-emitting elements is green. One emits light, and the other emits blue light. The light-receiving element emits red light and also has a light-receiving function. It has.

[0224] For example, when detecting touch operations using light-emitting and light-receiving devices, the light emitted from the light source is used by the user. - It is preferable that it is difficult to see. Blue light is less visible than green light, therefore blue It is preferable to use a light-emitting element that emits colored light as the light source. Therefore, the light-emitting element is blue. It is preferable that the light receiving element has the function of receiving light. However, it is not limited to this, the sensitivity of the light receiving element. Depending on the requirements, a light-emitting element can be appropriately selected to serve as the light source.

[0225] As described above, various pixel arrangements can be applied to the display device of this embodiment. ru.

[0226] [Device Structure] Next, a light-emitting element, a light-receiving element, and a light-receiving element that can be used in a display device according to one aspect of the present invention. The detailed configuration of the light-emitting element will be described below.

[0227] A display device according to one aspect of the present invention emits light in the direction opposite to the substrate on which the light-emitting element is formed. Top emission type, where light is emitted towards the substrate side where the light-emitting element is formed. It may be either a cushion type or a dual-emission type that emits light from both sides.

[0228] In this embodiment, a top-emission type display device will be used as an example for explanation.

[0229] In this specification, unless otherwise specified, elements (light-emitting elements, light-emitting layers, etc.) are multi-layered. Even when describing a configuration with multiple components, when describing matters common to each element: The letters are omitted in the explanation. For example, the light-emitting layer 283R and the light-emitting layer 283G, etc. When describing common elements, the term "emissive layer 283" may be used.

[0230] The display device 280A shown in Figure 10A includes a light-receiving element 270PD and a light-emitting element that emits red (R) light. The optical element 270R, the light-emitting element 270G that emits green (G) light, and the light-emitting element that emits blue (B) light It has a light-emitting element 270B.

[0231] Each light-emitting element consists of a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, a light-emitting layer, and an electron The device has a transport layer 284, an electron injection layer 285, and a common electrode 275 stacked in this order. Element 270R has an emissive layer 283R, and light-emitting element 270G has an emissive layer 283G. The light-emitting element 270B has a light-emitting layer 283B. The light-emitting layer 283R emits red light. It has a light-emitting material, the light-emitting layer 283G has a light-emitting material that emits green light, and the light-emitting layer 283B is It has a light-emitting substance that emits blue light.

[0232] The light-emitting element is activated by applying a voltage between the pixel electrode 271 and the common electrode 275. This is an electroluminescent element that emits light towards pole 275.

[0233] The photodetector 270PD consists of a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, and an active Layer 273, electron transport layer 284, electron injection layer 285, and common electrode 275 are stacked in this order. To possess.

[0234] The light-receiving element 270PD receives light incident from outside the display device 280A and receives electrical signals. It is a photoelectric conversion element that converts to [a certain value].

[0235] In this embodiment, the pixel electrode 271 is the anode in both the light-emitting element and the light-receiving element. It functions as such, and the common electrode 275 is described as functioning as the cathode. In other words, it is a light receiving device. The element is driven by applying a reverse bias between the pixel electrode 271 and the common electrode 275. By detecting light incident on a photodetector, an electric charge can be generated and extracted as an electric current.

[0236] In the display device of this embodiment, an organic compound is used in the active layer 273 of the light-receiving element 270PD. The light-receiving element 270PD has layers other than the active layer 273 that share the same configuration as the light-emitting element. This is possible. Therefore, a step of forming the active layer 273 is added to the light-emitting element fabrication process. Therefore, the light-receiving element 270PD can be formed in parallel with the formation of the light-emitting element. The optical element and the photodetector 270PD can be formed on the same substrate. Therefore, fabrication The 270PD light-receiving element can be incorporated into the display device without significantly increasing the number of manufacturing steps.

[0237] In the display device 280A, the active layer 273 of the light-receiving element 270PD and the light-emitting layer 28 This example shows a common configuration for the light-receiving element 270PD and the light-emitting element, except for the differences in how they are created. However, the configuration of the light-receiving element 270PD and the light-emitting element is not limited thereto. The PD and light-emitting element have layers that differentiate between each other, in addition to the active layer 273 and the light-emitting layer 283. It is also acceptable for the light-receiving element 270PD and the light-emitting element to share one common layer. It is preferable that the above is achieved. This allows the display device to be manufactured without significantly increasing the number of manufacturing steps. It can incorporate a 270PD light-receiving element.

[0238] Of the pixel electrode 271 and the common electrode 275, the electrode that extracts light transmits visible light. A conductive film is used. In addition, a conductive film that reflects visible light is used on the electrode that does not extract light. It is preferable that they be present.

[0239] The light-emitting element of the display device of this embodiment has a micro-cavity It is preferable that the structure is applied. Therefore, one of the pair of electrodes of the light-emitting element It has electrodes that are transparent to and reflective of visible light (semitransmissive and semi-reflective electrodes). It is preferable that the other has an electrode (reflective electrode) that is reflective to visible light. It is beautiful. Because the light-emitting element has a microcavity structure, the light emitted from the light-emitting layer By causing resonance between the two electrodes, the light emitted from the light-emitting element can be intensified.

[0240] Furthermore, semi-transmissive / semi-reflective electrodes are electrodes that transmit visible light (transparent electrodes) to reflective electrodes. It can be formed into a layered structure with poles (also called poles).

[0241] The light transmittance of the transparent electrode shall be 40% or more. For example, the light-emitting element shall emit visible light (wavelength 4 It is preferable to use electrodes with a transmittance of 40% or more for light (between 00 nm and less than 750 nm). The reflectance of the semi-transparent / semi-reflective electrode for visible light is 10% to 95%, preferably 30%. The visible light reflectance of the reflective electrode shall be between 40% and 100%, if preferred. Or, it should be between 70% and 100%. Also, the resistivity of these electrodes should be 1 × 10⁻⁶ -2 Ω Preferably, the wavelength should be less than cm. When emitting light, the transmittance or reflectance of near-infrared light of these electrodes is equal to the transmittance of visible light. Alternatively, similar to reflectance, it is preferable that the above numerical range is satisfied.

[0242] The light-emitting element has at least a light-emitting layer 283. The light-emitting element has layers other than the light-emitting layer 283. Therefore, materials with high hole injection properties, materials with high hole transport properties, hole blocking materials, and materials with high electron transport properties. Materials with high electron injection, materials with high electron injection, electron blocking materials, or bipolar materials (electron injection The system may further include a layer containing a substance with high transportability and hole transportability.

[0243] For example, a light-emitting element and a light-receiving element include a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. One or more layers of the layering can have a common configuration. Also, the light-emitting element and the light-receiving element are One or more of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer are fabricated separately from each other. It is possible.

[0244] The hole injection layer is a layer that injects holes from the anode into the hole transport layer, and is a material with high hole injection potential. This is a layer containing [a certain material]. Materials with high hole injection potential include hole transport materials and hole acceptor materials. Composite materials containing (electron-accepting materials), or aromatic amine compounds, etc., can be used. Cut.

[0245] In a light-emitting element, the hole transport layer emits holes injected from the anode by the hole injection layer. It is a layer that transports light to the light layer. In a photodetector, the hole transport layer transports light incident in the active layer. This layer transports holes generated based on the process to the anode. The hole transport layer contains a hole transport material. It is a layer. As a hole transport material, 1 × 10 -6 cm 2 Having a hole mobility of / Vs or greater A substance that is capable of transporting holes rather than electrons is preferred. These can also be used. As hole transport materials, π-electron-rich heteroaromatic compounds (e.g.) For example, carbazole derivatives, thiophene derivatives, furan derivatives, etc., aromatic amines (fragrant Materials with high hole transport properties, such as compounds having a amine skeleton, are preferred.

[0246] In a light-emitting element, the electron transport layer emits electrons injected from the cathode by the electron injection layer. It is a layer that transports light to the light layer. In a photodetector, the electron transport layer transports light that was incident on the active layer. This layer transports electrons generated based on the process to the cathode. The electron transport layer contains an electron transport material. It is a layer. As an electron transport material, 1 × 10 -6 cm 2 Having an electron mobility of / Vs or greater A substance that is capable of transporting electrons is preferred. However, any substance with higher electron transport capabilities than holes is also acceptable. These can also be used. As electron transport materials, metal complexes having a quinoline skeleton, etc. Metal complexes having a zoquinoline skeleton, metal complexes having an oxazole skeleton, thiazole skeleton In addition to metal complexes with a specific property, oxadiazole derivatives, triazole derivatives, imidazo oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives Ligand-containing quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzo Quinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and others Materials with high electron transport capabilities, such as π-electron-deficient heteroaromatic compounds containing nitrogen heteroaromatic compounds. It can be used.

[0247] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is made of a material with high electron injection capabilities. This is a layer containing [a certain substance]. Materials with high electron injection include alkali metals, alkaline earth metals, and [another substance]. Alternatively, those compounds can be used. Materials with high electron injection properties include those with electron transport properties. Composite materials containing both the material and a donor material (electron-donating material) can also be used.

[0248] The light-emitting layer 283 is a layer containing a light-emitting material. The light-emitting layer 283 emits one or more types of light. It may contain substances. Examples of luminescent substances include blue, purple, blue-violet, green, yellow-green, and yellow. Substances that emit light in various colors such as orange and red are used as appropriate. In addition, near-infrared light is used as the light-emitting material. It is also possible to use light-emitting materials.

[0249] Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials. It can be done.

[0250] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, and triphenylene derivatives. Body, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofluorene Dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrim Examples include din derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0251] Examples of phosphorescent materials include 4H-triazole skeletons, 1H-triazole skeletons, and imi Organometallic complexes having a dazole, pyrimidine, pyrazine, or pyridine skeleton. The form (especially iridium complexes) uses phenylpyridine derivatives having electron-withdrawing groups as ligands. Examples include organometallic complexes (especially iridium complexes), platinum complexes, and rare earth metal complexes.

[0252] The light-emitting layer 283 contains one or more organic compounds in addition to the light-emitting substance (guest material). It may contain host material, assist material, etc. One or more types of organic compounds In this case, either or both hole-transporting materials and electron-transporting materials can be used. Using one or more types of organic compounds, bipolar materials or TADF materials are used. That's fine.

[0253] The light-emitting layer 283 is, for example, a combination of phosphorescent material and holes that readily form excitation complexes. It is preferable to have a transportable material and an electron transportable material. Therefore, the energy transfer from the excited complex to the light-emitting material (phosphorescent material) is called ExTET (Ex Efficient luminescence using ciplex-triplet energy transfer This can be easily obtained. By selecting combinations that form excitation complexes that emit light, energy transfer can be controlled. This creates a smoother surface, allowing for efficient emission of light. This configuration enables high efficiency of the light-emitting element. It enables both low-voltage operation and long lifespan simultaneously.

[0254] As for combinations of materials that form excited complexes, the HOMO level of the hole transport material (highest) It is preferable that the occupied orbital level is greater than or equal to the HOMO level of the electron-transporting material. The LUMO level (lowest unoccupied orbital level) of the material is greater than or equal to the LUMO level of the electron transport material. This is preferable. The LUMO and HOMO levels of the material are determined by cyclic voltammetry. Derived from the electrochemical properties (reduction potential and oxidation potential) of the material measured by CV (Cold Voltage) measurement. It is possible.

[0255] The formation of excited complexes is, for example, the emission spectrum of hole transport materials, the emission spectrum of electron transport materials. The emission spectra of the individual molecules and the mixed film made by mixing these materials were compared, and the emission spectrum of the mixed film was determined. The vector shifts to a longer wavelength than the emission spectrum of each material (or a new one is added to the longer wavelength side). This can be confirmed by observing a phenomenon (with a peak). Alternatively, hole transport material Transient photoluminescence (PL) of materials, transient PL of electron transport materials, and these materials The transient PL of the mixed films was compared, and the transient PL lifetime of the mixed film was found to be different from the transient PL lifetime of each individual material. We can observe differences in transient response, such as the presence of longer-lived components or a larger proportion of delayed components. This can be confirmed by measurement. Furthermore, the transient PL mentioned above is transient electroluminescent It can also be read as Nessence (EL). That is, transient EL of hole transporting materials, electric The transient EL of materials with particle transport properties and the transient EL of mixed films thereof were compared, and the transient response was examined. The formation of excited complexes can also be confirmed by observing the differences.

[0256] The active layer 273 contains a semiconductor. This semiconductor may be an inorganic semiconductor such as silicon, and Examples include organic semiconductors containing organic compounds. In this embodiment, the active layer 273 has An example of using an organic semiconductor as the semiconductor is shown. By using an organic semiconductor, the light-emitting layer 28 3 and the active layer 273 can be formed in the same way (for example, by vacuum deposition), and manufactured This is preferable because it allows for the standardization of equipment.

[0257] The n-type semiconductor material of the active layer 273 is fullerene (for example, C 60 , C 70 Examples include electron-accepting organic semiconductor materials such as fullerene derivatives. Fullerenes are, It has a shape similar to a soccer ball, and this shape is energetically stable. (Fullerene) In this case, both the HOMO and LUMO levels are deep (low). In fullerenes, the LUMO level is Because of its deep pores, it has extremely high electron-accepting properties. Usually, like benzene, When π-electron conjugation (resonance) spreads across a surface, electron-donating ability (donor ability) increases, but fullerenes Because it has a spherical shape, even though the π electrons are spread out widely, it has high electron-accepting properties. High electron-accepting ability allows for rapid and efficient charge separation, making it useful as a photodetector. Yes. C 60 , C 70 Both have a broad absorption band in the visible light region, and especially C 70 is C 60 Compared to other systems, it is preferable because it has a larger π-electron conjugation system and a broad absorption band in the long-wavelength region.

[0258] Furthermore, as materials for n-type semiconductors, metal complexes with a quinoline skeleton and benzoquinoline skeletons are also used. Metal complexes having a hexagram, metal complexes having an oxazole skeleton, metals having a thiazole skeleton Complex, oxadiazole derivative, triazole derivative, imidazole derivative, oxazo thiazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinol derivatives Dibenzoquinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyri Zin derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives Examples include rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0259] The p-type semiconductor material of the active layer 273 is copper(II) phthalocyanine (Cop per(II) phthalocyanine (CuPc), tetraphenyldibenzo Tetraphenyldibenzoperiflanthene; DBP), Zinc Phthalocyanine (ZnPc) Examples include electron-donating organic semiconductor materials such as tin phthalocyanine (SnPc) and quinacridone. It can be done.

[0260] Furthermore, p-type semiconductor materials include carbazole derivatives, thiophene derivatives, and furan derivatives. Examples include conductors and compounds having an aromatic amine skeleton. Furthermore, as p-type semiconductor materials... For example, naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, Fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, Indol derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazol Calcium derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, ki Nacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyf Examples include ruolene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives. .

[0261] The HOMO level of electron-donating organic semiconductor materials is the same as the HOM level of electron-accepting organic semiconductor materials. It is preferable that the LUMO level be shallower (higher) than the O level. LUMO level of electron-donating organic semiconductor materials It is preferable that the LUMO level is shallower (higher) than that of the electron-accepting organic semiconductor material.

[0262] As an electron-accepting organic semiconductor material, spherical fullerenes are used, and electron-donating organic semiconductors It is preferable to use an organic semiconductor material with a shape close to a plane as the main material. The offspring tend to gather together, and when molecules of the same type aggregate, the energy levels of the molecular orbitals Because it is nearby, carrier transportability can be improved.

[0263] For example, the active layer 273 is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor. Alternatively, the active layer 273 may be formed by stacking an n-type semiconductor and a p-type semiconductor.

[0264] Both low-molecular-weight compounds and high-molecular-weight compounds can be used for light-emitting and light-receiving elements. It may contain inorganic compounds. The layers constituting the light-emitting element and the light-receiving element are, By methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating. It can be formed.

[0265] The display device 280B shown in Figure 10B has the same light-receiving element 270PD and light-emitting element 270R. It differs from the display device 280A in terms of its configuration.

[0266] The light-receiving element 270PD and the light-emitting element 270R share an active layer 273 and a light-emitting layer 283R. To possess.

[0267] Here, the light-receiving element 270PD is combined with a light-emitting element that emits light with a longer wavelength than the light to be detected. A standard configuration is preferable. For example, a photodetector 270PD configured to detect blue light. This means that the configuration of one or both of the light-emitting elements 270R and 270G may be the same. Yes, it is possible. For example, a photodetector 270PD configured to detect green light has a light-emitting element 270R and A similar configuration can be achieved.

[0268] By making the light-receiving element 270PD and the light-emitting element 270R have a common configuration, the light-receiving element 2 Compared to a configuration in which 70PD and the light-emitting element 270R have layers that are made separately from each other, the film deposition process The number of steps and masks can be reduced. Therefore, the manufacturing process and production of the display device can be reduced. This can reduce manufacturing costs.

[0269] Furthermore, by making the light-receiving element 270PD and the light-emitting element 270R have a common configuration, light reception Compared to a configuration in which the element 270PD and the light-emitting element 270R have layers that create each other, This allows for a narrower margin for misalignment. This, in turn, allows for an increase in the aperture ratio of the pixels. This can improve the light extraction efficiency of the display device. This extends the lifespan of the light-emitting element. It is possible. Furthermore, the display device can display high brightness. High-resolution imaging is also possible.

[0270] The light-emitting layer 283R has a light-emitting material that emits red light. The active layer 273 is more red than Organic compounds that absorb short-wavelength light (for example, green light and / or blue light) It possesses the following properties. The active layer 273 is less likely to absorb red light and absorbs light with wavelengths shorter than red light. It is preferable to have an organic compound that allows red light to be emitted from the light-emitting element 270R. The light is efficiently extracted, and the photodetector 270PD detects light with wavelengths shorter than red with high precision. It is possible.

[0271] Furthermore, in the display device 280B, the light-emitting element 270R and the light-receiving element 270PD have the same configuration. As an example, the light-emitting element 270R and the light-receiving element 270PD are of different thicknesses. It may have an optical adjustment layer.

[0272] The display device 280C shown in Figures 11A and 11B emits red (R) light and has a light receiver. A light-emitting element 270SR, a light-emitting element 270G, and a light-emitting element 270B having the ability to receive and emit light. The configuration of the light-emitting element 270G and the light-emitting element 270B can be adapted from the display device 280A, etc. .

[0273] The light-emitting element 270SR includes a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, and an active Light layer 273, light-emitting layer 283R, electron transport layer 284, electron injection layer 285, and common electrode 27 The 5 is stacked in this order. The light-receiving element 270SR is exemplified in the display device 280B. The light-emitting element 270R and the light-receiving element 270PD have the same configuration.

[0274] Figure 11A shows the case where the light-emitting element 270SR functions as a light-emitting element. Then, light-emitting element 270B emits blue light, and light-emitting element 270G emits green light, and light-receiving and receiving occurs. This shows an example of element 270SR emitting red light.

[0275] Figure 11B shows the case where the light-receiving element 270SR functions as a light-receiving element. Then, the light-receiving element 270SR receives the blue light emitted by the light-receiving element 270B and the light-receiving element 270 This shows an example of receiving the green light emitted by G.

[0276] The light-emitting element 270B, the light-emitting element 270G, and the light-receiving element 270SR are, respectively, pixels. It has an electrode 271 and a common electrode 275. In this embodiment, the pixel electrode 271 is the anode. The following example illustrates the function where the common electrode 275 functions as the cathode. The 270SR is driven by applying a reverse bias between the pixel electrode 271 and the common electrode 275. Then, light incident on the light-emitting element 270SR is detected, an electric charge is generated, and it is extracted as an electric current. It is possible.

[0277] The light-emitting element 270SR can be described as having a configuration in which an active layer 273 is added to the light-emitting element. In other words, by simply adding a step of forming an active layer 273 to the manufacturing process of the light-emitting element, The light-emitting element 270SR can be formed in parallel with the formation of the optical element. The light-emitting and receiving elements can be formed on the same substrate. Therefore, the manufacturing process can be significantly reduced. Without compromising quality, it is possible to add either or both imaging and sensing functions to the display unit. can.

[0278] The stacking order of the light-emitting layer 283R and the active layer 273 is not limited. In Figures 11A and 11B, An active layer 273 is provided on the hole transport layer 282, and a light-emitting layer 283R is provided on the active layer 273. An example is shown. The stacking order of the light-emitting layer 283R and the active layer 273 may be reversed.

[0279] Furthermore, the light-emitting and receiving element includes a hole injection layer 281, a hole transport layer 282, an electron transport layer 284, and The electron injection layer 285 does not necessarily have to have at least one layer. Also, the light-emitting and receiving element is It may also have other functional layers, such as a hole blocking layer or an electron blocking layer.

[0280] In a light-receiving device, a conductive film that transmits visible light is used for the electrode that extracts light. Furthermore, it is preferable to use a conductive film that reflects visible light on the electrode that does not extract light. .

[0281] The function and materials of each layer constituting the light-emitting and light-receiving elements are as follows: Since it is similar to the function and materials, a detailed explanation will be omitted.

[0282] Figures 11C to 11G show examples of stacked structures of light-emitting and receiving devices.

[0283] The light-emitting / receiving device shown in Figure 11C consists of a first electrode 277, a hole injection layer 281, and a hole transport layer 28 2. Light-emitting layer 283R, active layer 273, electron transport layer 284, electron injection layer 285, and second It has an electrode 278.

[0284] Figure 11C shows that a light-emitting layer 283R is provided on the hole transport layer 282, and a light-emitting layer 283R is provided on the light-emitting layer 283R. This is an example of layering of the 273 layer.

[0285] As shown in Figures 11A to 11C, the active layer 273 and the light-emitting layer 283R are in contact with each other. It's okay to be there.

[0286] Furthermore, it is preferable that a buffer layer be provided between the active layer 273 and the light-emitting layer 283R. In this case, it is preferable that the buffer layer has hole transport and electron transport properties. For example, it is preferable to use a bipolar material for the buffer layer. Alternatively, the buffer The layers include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a hole blocking layer, and an electron At least one layer from among the child block layers, etc., can be used. Figure 11D shows a buffer layer. An example using the hole transport layer 282 is shown.

[0287] By providing a buffer layer between the active layer 273 and the light-emitting layer 283R, the light-emitting layer 283R This suppresses the transfer of excitation energy to the active layer 273. Furthermore, by using a buffer layer Furthermore, the optical path length (cavity length) of the microcavity structure can also be adjusted. Therefore, from a light-emitting / receiving element having a buffer layer between the active layer 273 and the light-emitting layer 283R, high High luminous efficiency can be obtained.

[0288] Figure 11E shows a hole transport layer 282-1 on a hole injection layer 281, an active layer 273, and a hole transport layer This is an example of a laminated structure in which layers 282-2 and the light-emitting layer 283R are stacked in that order. Hole transport layer 2 Layer 82-2 functions as a buffer layer. Hole transport layers 282-1 and 281-2 This means that it may contain the same material or different materials. Also, hole transport Instead of layer 281-2, you may use a layer that can be used as a buffer layer as described above. Alternatively, the positions of the active layer 273 and the light-emitting layer 283R may be swapped.

[0289] The light-emitting element shown in Figure 11F does not have a hole transport layer 282, unlike the light-emitting element shown in Figure 11A. It is different from an optical element. Thus, the light-emitting element has a hole injection layer 281, a hole transport layer 282, and The device does not necessarily have to have at least one of the electron transport layer 284 and the electron injection layer 285. Furthermore, even if the light-emitting / receiving element has other functional layers such as a hole blocking layer or an electron blocking layer, good.

[0290] The light-emitting device shown in Figure 11G does not have an active layer 273 and a light-emitting layer 283R, and the light-emitting layer and active layer It differs from the light-emitting / receiving device shown in Figure 11A in that it has a layer 289 that also serves as a luminescence layer.

[0291] As a layer that serves as both a light-emitting layer and an active layer, for example, an n-type can be used in the active layer 273. A semiconductor, a p-type semiconductor that can be used in the active layer 273, and a material used in the light-emitting layer 283R A layer containing a light-emitting material and three other materials can be used.

[0292] Furthermore, the absorption spectrum of a mixed material of n-type and p-type semiconductors is shown for the lowest energy side. The absorption band and the maximum peak of the emission spectrum (PL spectrum) of the luminescent material overlap with each other. It is preferable not to be in contact with each other, and even more preferable to be sufficiently far apart.

[0293] [Example of display device configuration 2] The following describes the detailed configuration of a display device according to one aspect of the present invention. In particular, An example of a display device having a light-receiving element and a light-emitting element will be described.

[0294] [Configuration Example 2-1] Figure 12A shows a cross-sectional view of the display device 300A. The display device 300A consists of a substrate 351, and a base It has a plate 352, a light-receiving element 310, and a light-emitting element 390.

[0295] The light-emitting element 390 consists of a pixel electrode 391, a buffer layer 312, a light-emitting layer 393, and a buffer layer 3 14 and the common electrode 315 are stacked in this order. The buffer layer 312 is a hole injection layer It may have one or both of the and hole transport layers. The light-emitting layer 393 contains an organic compound The buffer layer 314 has either an electron injection layer or an electron transport layer, or both. The light-emitting element 390 has the function of emitting visible light 321. 0A may further have a light-emitting element that has the function of emitting infrared light.

[0296] The light-receiving element 310 consists of a pixel electrode 311, a buffer layer 312, an active layer 313, and a buffer layer 3 14 and the common electrode 315 are stacked in this order. The active layer 313 contains an organic compound. The light-receiving element 310 has the function of detecting visible light. Furthermore, it may also have a function for detecting infrared light.

[0297] Buffer layer 312, buffer layer 314, and common electrode 315 are connected to the light-emitting element 390 and the receiving element. This is a common layer for the optical element 310 and is provided across them. Buffer layer 312, buffer The a layer 314 and the common electrode 315 overlap with the active layer 313 and the pixel electrode 311, It has a portion that overlaps with the light-emitting layer 393 and the pixel electrode 391, and a portion that does not overlap with either. ru.

[0298] In this embodiment, both the light-emitting element 390 and the light-receiving element 310 have pixel electrodes. This will be explained assuming that the anode functions and the common electrode 315 functions as the cathode. The light-receiving element 310 is driven by applying a reverse bias between the pixel electrode 311 and the common electrode 315. By doing so, the display device 300A detects the light incident on the light receiving element 310 and generates an electric charge. Therefore, it can be extracted as electric current.

[0299] Pixel electrode 311, pixel electrode 391, buffer layer 312, active layer 313, buffer layer 31 4. The light-emitting layer 393 and the common electrode 315 may each be a single-layer structure, or a laminated structure It is also acceptable to build it.

[0300] Pixel electrodes 311 and 391 are each located on the insulating layer 414. The electrodes can be formed using the same material and the same process. Pixel electrode 311 and pixel electrode The end of 391 is covered by a partition wall 416. Two adjacent pixel electrodes are separated by a partition wall. They are electrically insulated from each other by wall 416 (or electrically separated). .

[0301] An organic insulating film is preferred as the partition wall 416. Materials that can be used as the organic insulating film. Examples include acrylic resin, polyimide resin, epoxy resin, polyamide resin, and polyimide Amide resins, siloxane resins, benzocyclobutene resins, phenolic resins, and these Examples include resin precursors. The partition wall 416 is a layer that transmits visible light. Alternatively, a partition that blocks visible light may be provided.

[0302] The common electrode 315 is a layer used in common by the light-receiving element 310 and the light-emitting element 390.

[0303] The materials and film thickness of the pair of electrodes of the light-receiving element 310 and the light-emitting element 390 are equal. This makes it possible to reduce the manufacturing cost of the display device and simplify the manufacturing process. .

[0304] The display device 300A has a light-receiving element 310 between a pair of substrates (substrate 351 and substrate 352). It includes a light-emitting element 390, a transistor 331, and a transistor 332, etc.

[0305] In the light-receiving element 310, a buffer located between the pixel electrode 311 and the common electrode 315. Layer 312, the active layer 313, and the buffer layer 314 are organic layers (layers containing organic compounds) It is also possible to do so. It is preferable that the pixel electrode 311 has the function of reflecting visible light. Common Electrode 315 has the function of transmitting visible light. The light-receiving element 310 detects infrared light. In this configuration, the common electrode 315 has the function of transmitting infrared light. Furthermore, the pixel electrode 3 It is preferable that element 11 has the function of reflecting infrared light.

[0306] The light-receiving element 310 has the function of detecting light. Specifically, the light-receiving element 310 is used to display A photoelectric element that receives light 322 incident from outside the device 300A and converts it into an electrical signal. It is a child. Light 322 can also be described as light reflected by the object from the light-emitting element 390. Furthermore, the light 322 is transmitted to the light receiving element 310 via a lens or the like provided in the display device 300A. It may be incident on it.

[0307] In the light-emitting element 390, a buffer located between the pixel electrode 391 and the common electrode 315. Layer 312, the light-emitting layer 393, and the buffer layer 314 can collectively be called the EL layer. The EL layer has at least an emissive layer 393. As described above, the pixel electrode 391 is It is preferable that it has the function of reflecting visible light. Also, the common electrode 315 transmits visible light. It has the function. Furthermore, the display device 300A has a configuration that includes a light-emitting element that emits infrared light. In this case, the common electrode 315 has the function of transmitting infrared light. Furthermore, the pixel electrode 391 is infrared It is preferable that it has the function of reflecting light.

[0308] The light-emitting element of the display device of this embodiment has a micro-cavity It is preferable that the structure is applied. The light-emitting element 390 has a pixel electrode 391 and a common electrode 3 An optical adjustment layer may be provided between 15 and 15. By applying a micro-resonator structure, each It is possible to amplify and extract light of a specific color from an optical element.

[0309] The light-emitting element 390 has the function of emitting visible light. Specifically, the light-emitting element 390 has the function of emitting visible light. By applying a voltage between the elemental electrode 391 and the common electrode 315, light (here) is emitted towards the substrate 352. This is an electroluminescent element that emits visible light (321).

[0310] The pixel electrode 311 of the light-receiving element 310 is located through an opening provided in the insulating layer 414. The source or drain of transistor 331 is electrically connected. (Light-emitting element 39) The pixel electrode 391 of 0 is connected to the transistor 3 through an opening provided in the insulating layer 414. It is electrically connected to the source or drain of 32.

[0311] Transistors 331 and 332 are on the same layer (substrate 351 in Figure 12A). It is touching the top.

[0312] At least a portion of the circuit electrically connected to the light-receiving element 310 is electrically connected to the light-emitting element 390. It is preferable that the circuits to be connected are formed using the same materials and processes. Therefore, compared to forming the two circuits separately, the thickness of the display device can be reduced. Furthermore, the manufacturing process can be simplified.

[0313] The light-receiving element 310 and the light-emitting element 390 are each covered with a protective layer 395. This is preferable. In Figure 12A, the protective layer 395 is provided in contact with the common electrode 315. By providing the protective layer 395, impurities such as water can enter the light-receiving element 310 and the light-emitting element 390. This suppresses the ingress of light and improves the reliability of the light-receiving element 310 and the light-emitting element 390. Furthermore, the protective layer 395 and the substrate 352 are bonded together by the adhesive layer 342.

[0314] A light-shielding layer 358 is provided on the surface of substrate 352 that faces substrate 351. The light-shielding layer 358 is It has openings in positions that overlap with the light-emitting element 390 and in positions that overlap with the light-receiving element 310.

[0315] Here, the light-receiving element 310 detects the light emitted by the light-emitting element 390 that has been reflected by the object. However, the light emitted from the light-emitting element 390 is reflected within the display device 300A and transmitted through the object. In some cases, stray light may enter the light-receiving element 310. The light-shielding layer 358 protects against such stray light. The effect of can be suppressed. For example, if the light-shielding layer 358 is not provided, the light-emitting element The light 323 emitted by the child 390 is reflected by the substrate 352, and the reflected light 324 is directed to the photodetector 310. It may be incident. By providing the light-shielding layer 358, reflected light 324 enters the light-receiving element 310. This can suppress emission. This reduces noise and improves the sensor using the light-receiving element 310. This can increase the sensitivity.

[0316] As the light-shielding layer 358, a material that blocks light emission from the light-emitting element can be used. 358 preferably absorbs visible light. For example, the light-shielding layer 358 may be a metal material. Alternatively, using a resin material containing a pigment (such as carbon black) or dye, blackening can be achieved. Trix can be formed. The light-shielding layer 358 is a red color filter, green color - A layered structure of a filter and a blue color filter may also be used.

[0317] [Configuration Example 2-2] The display device 300B shown in Figure 12B has a lens 349, and the display device 300 It differs primarily from A.

[0318] Lens 349 is located on the substrate 351 side of substrate 352. Light incident from the outside... 322 is incident on the light-receiving element 310 via the lens 349. Lens 349 and substrate 3 For 52, it is preferable to use a material with high transmittance to visible light.

[0319] Light enters the light-receiving element 310 through the lens 349, and the light entering the light-receiving element 310 The range of light can be narrowed. This allows for a narrower imaging range between multiple light-receiving elements 310. This suppresses overlapping and allows for the capture of clear images with less blurring.

[0320] Furthermore, the lens 349 can focus the incident light. Therefore, it can focus the light into the light-receiving element 310. This increases the amount of light that is emitted. This improves the photoelectric conversion efficiency of the light-receiving element 310. It is possible to do so.

[0321] [Configuration Example 2-3] The display device 300C shown in Figure 12C differs in the shape of the light-shielding layer 358 from the above-mentioned display device. It differs primarily from the 300A.

[0322] In a plan view, the light-shielding layer 358 has an opening that overlaps with the light-receiving element 310. It is positioned inside the light-receiving area. Light-shielding layer 358 light-receiving element 310 The smaller the diameter of the overlapping aperture, the narrower the range of light incident on the photodetector 310. Yes, it is possible. This makes it possible to suppress the overlap of imaging ranges between multiple light-receiving elements 310, It can capture clear images with minimal overexposure.

[0323] For example, the area of ​​the opening of the light-shielding layer 358 is 80% or less of the area of ​​the light-receiving region of the light-receiving element 310. Below 70%, below 60%, below 50%, or below 40%, and 1% or more, 5% It can be 10% or more. The smaller the area of ​​the opening in the light-shielding layer 358, the lower the percentage. It is possible to capture a clear image. On the other hand, if the area of ​​the aperture is too small, the light-receiving element The amount of light reaching 310 will decrease, which may reduce light sensitivity. Therefore, as mentioned above... It is preferable to set them appropriately within the specified range. The upper and lower limits mentioned above can be arbitrarily combined. They can be combined. Also, the light-receiving area of ​​the light-receiving element 310 is the same as the opening of the partition wall 416. It can be replaced.

[0324] Furthermore, the center of the opening in the light-shielding layer 358 that overlaps with the light-receiving element 310 is, in a plan view, light-receiving It may be offset from the center of the light-receiving area of ​​element 310. Furthermore, in a plan view, the light-shielding layer The aperture 358 may be configured so that it does not overlap with the light-receiving area of ​​the light-receiving element 310. Therefore, only obliquely oriented light that has passed through the opening of the light-shielding layer 358 is received by the light-receiving element 310. This makes it possible to more effectively limit the range of light incident on the light-receiving element 310. This allows for the capture of clear images.

[0325] [Configuration Example 2-4] The display device 300D shown in Figure 13A has a buffer layer 312 that is not a common layer, and therefore the above display It differs primarily from device 300A.

[0326] The light-receiving element 310 consists of a pixel electrode 311, a buffer layer 312, an active layer 313, and a buffer layer 3 14, and a common electrode 315. The light-emitting element 390 has a pixel electrode 391, a buffer layer 3 92, it has a light-emitting layer 393, a buffer layer 314, and a common electrode 315. Active layer 313, buffer The phosphate layer 312, the light-emitting layer 393, and the buffer layer 392 each have an island-shaped upper surface. ru.

[0327] Buffer layer 312 and buffer layer 392 may contain different materials or the same material. It may include.

[0328] In this way, by creating separate buffer layers for the light-emitting element 390 and the light-receiving element 310, This increases the degree of freedom in selecting the material for the buffer layer used in the optical element 390 and the photodetector 310. This makes optimization easier. Also, the buffer layer 314 and the common electrode 315 are made into a common layer. As a result, the manufacturing process is simpler compared to when the light-emitting element 390 and the light-receiving element 310 are manufactured separately. It can be simplified and manufacturing costs can be reduced.

[0329] [Configuration Example 2-5] The display device 300E shown in Figure 13B has a buffer layer 314 that is not a common layer, and therefore the above display It differs primarily from device 300A.

[0330] The light-receiving element 310 consists of a pixel electrode 311, a buffer layer 312, an active layer 313, and a buffer layer 3 14, and a common electrode 315. The light-emitting element 390 has a pixel electrode 391, a buffer layer 3 12. It has an emissive layer 393, a buffer layer 394, and a common electrode 315. Active layer 313, buffer The fa layer 314, the light-emitting layer 393, and the buffer layer 394 each have an island-shaped upper surface. ru.

[0331] Buffer layer 314 and buffer layer 394 may contain different materials or the same material. It may include.

[0332] In this way, by creating separate buffer layers for the light-emitting element 390 and the light-receiving element 310, This increases the degree of freedom in selecting the material for the buffer layer used in the optical element 390 and the photodetector 310. This makes optimization easier. Also, the buffer layer 312 and the common electrode 315 are made into a common layer. As a result, the manufacturing process is simpler compared to when the light-emitting element 390 and the light-receiving element 310 are manufactured separately. It can be simplified and manufacturing costs can be reduced.

[0333] [Configuration Example 2-6] The display device 300F shown in Figure 13C has buffer layers 312 and 314 as common layers. This is the main difference from the above-mentioned display device 300A.

[0334] The light-receiving element 310 consists of a pixel electrode 311, a buffer layer 312, an active layer 313, and a buffer layer 3 14, and a common electrode 315. The light-emitting element 390 has a pixel electrode 391, a buffer layer 3 92, it has an emissive layer 393, a buffer layer 394, and a common electrode 315. Buffer layer 312, Active layer 313, buffer layer 314, buffer layer 392, light-emitting layer 393, and buffer layer 3 Each of the 94 has an island-like top surface shape.

[0335] In this way, by creating separate buffer layers for the light-emitting element 390 and the light-receiving element 310, This increases the degree of freedom in selecting the material for the buffer layer used in the optical element 390 and the photodetector 310. This makes optimization easier. Also, by making the common electrode 315 a common layer, the light-emitting element 39 Compared to manufacturing the 0 and the light-receiving element 310 separately, the manufacturing process is simplified, and manufacturing costs are reduced. It can reduce costs.

[0336] [Example of display device configuration 3] The following describes the detailed configuration of a display device according to one aspect of the present invention. In particular, An example of a display device having a light-emitting / receiving element and a light-emitting element will be described.

[0337] In the following sections, we will refer to the above description for any overlapping information and omit further explanations. There is a match.

[0338] [Configuration Example 3-1] Figure 14A shows a cross-sectional view of the display device 300G. The display device 300G consists of a light-emitting / receiving element 39 It has 0SR, light-emitting element 390G, and light-emitting element 390B.

[0339] The light-emitting element 390SR functions as a light-emitting element that emits red light 321R, and light 32 It has the function of a photoelectric conversion element that receives light 3. The light-emitting element 390G receives green light 3. It can emit 21G. The light-emitting element 390B can emit blue light 321B. Cut.

[0340] The light-emitting element 390SR consists of a pixel electrode 311, a buffer layer 312, an active layer 313, and a light-emitting layer. It has 393R, a buffer layer 314, and a common electrode 315. The light-emitting element 390G is a pixel Electrode 391G, buffer layer 312, light-emitting layer 393G, buffer layer 314, and common electrode 3 It has 15. The light-emitting element 390B has a pixel electrode 391B, a buffer layer 312, and a light-emitting layer 39 It has 3B, a buffer layer 314, and a common electrode 315.

[0341] Buffer layer 312, buffer layer 314, and common electrode 315 are connected to the light-emitting / receiving element 390SR This is a common layer (common layer) for the light-emitting element 390G and the light-emitting element 390B, and extends across them. The active layer 313, the light-emitting layer 393R, the light-emitting layer 393G, and the light-emitting layer 393B are provided as follows: Each has an island-like top surface shape. In Figure 14, the active layer 313 and the light-emitting layer 393R The laminate, the light-emitting layer 393G, and the light-emitting layer 393B are shown as examples where they are provided at a distance from each other. However, two adjacent regions may overlap.

[0342] Furthermore, similar to the above-mentioned display devices 300D, 300E, or 300F, A configuration in which one or both of the buffer layer 312 and the buffer layer 314 are not used as a common layer. It is possible.

[0343] The pixel electrode 311 is electrically connected to either the source or the drain of the transistor 331. The pixel electrode 391G is electrically connected to one of the source and drain of transistor 332G. It is connected to the source and drain of transistor 332B. Pixel electrode 391B is connected to one of the source and drains of transistor 332B. It is electrically connected to it.

[0344] This configuration makes it possible to achieve a higher-resolution display device.

[0345] [Configuration Example 3-2] The display device 300H shown in Figure 14B differs in the configuration of the light-emitting / receiving element 390SR, as described above. It differs primarily from the 300G display device.

[0346] The light-emitting element 390SR is replaced by the active layer 313 and the light-emitting layer 393R, and the light-emitting layer 31 It has 8R.

[0347] The light-emitting layer 318R is a layer that combines the functions of a light-emitting layer and an active layer. For example, a layer containing the aforementioned light-emitting material, an n-type semiconductor, and a p-type semiconductor can be used. can.

[0348] This configuration allows for a simpler manufacturing process, making cost reduction easier. Yes.

[0349] [Example of display device configuration 4] The following describes a more specific configuration of a display device according to one aspect of the present invention.

[0350] Figure 15 shows a perspective view of the display device 400, and Figure 16A shows a cross-sectional view of the display device 400. .

[0351] The display device 400 has a configuration in which substrate 353 and substrate 354 are bonded together. Figure 15 In this example, circuit board 354 is clearly indicated by a dashed line.

[0352] The display device 400 includes a display unit 362, a circuit 364, wiring 365, etc. Figure 15 shows the table. This shows an example in which IC (integrated circuit) 373 and FPC 372 are mounted on the display device 400. Therefore, the configuration shown in Figure 15 is a display model having a display device 400, an IC, and an FPC. It can also be called a joule.

[0353] For example, a scan line drive circuit can be used as circuit 364.

[0354] The wiring 365 has the function of supplying signals and power to the display unit 362 and the circuit 364. The signal and power are input to wiring 365 from the outside via FPC372, or The signal is input from IC373 to wiring 365.

[0355] Figure 15 shows the COG (Chip On Glass) method or COF (Chip O An example is shown in which IC373 is provided on substrate 353 using the n Film method, etc. 373 can be applied to ICs that have, for example, scan line driving circuits or signal line driving circuits. Furthermore, the display device 400 and the display module may be configured without an IC. The IC may be mounted on the FPC using a COF (Cross-of-Fiber) method or similar.

[0356] Figure 16A shows a portion of the region including the FPC372 of the display device 400 shown in Figure 15, and the circuitry. A portion of the area including 364, a portion of the area including the display unit 362, and a portion of the area including the end. An example of a cross-section when each of them is cut is shown.

[0357] The display device 400 shown in Figure 16 has a transistor 408 between substrate 353 and substrate 354. It includes transistor 409, transistor 410, light-emitting element 390, light-receiving element 310, etc. ru.

[0358] The substrate 354 and the protective layer 395 are bonded together via an adhesive layer 342, and the display device 400 A solid encapsulation structure is applied to it.

[0359] The substrate 353 and the insulating layer 412 are bonded together by an adhesive layer 355.

[0360] The method for fabricating the display device 400 involves first constructing the insulating layer 412, each transistor, and the photodetector. A fabricated substrate on which light-emitting elements 310, 390, etc., and a substrate 3 on which a light-shielding layer 358, etc., are provided. 54 and are bonded together by the adhesive layer 342. Then, the fabricated substrate is peeled off and the exposed surface is... By bonding the substrate 353 using the adhesive layer 355, each component formed on the fabricated substrate is The element is transferred to substrate 353. Substrates 353 and 354 each have flexibility. This is preferable. This increases the flexibility of the display device 400.

[0361] The light-emitting element 390 consists of a pixel electrode 391, a buffer layer 312, and a light-emitting layer 3, from the insulating layer 414 side. It has a stacked structure in which 93, a buffer layer 314, and a common electrode 315 are stacked in that order. Electrode 391, through an opening in the insulating layer 414, provides power to the source and of transistor 408. It is connected to one side of the drain. Transistor 408 controls the electricity flowing to the light-emitting element 390. It has a function to control flow.

[0362] The light-receiving element 310 consists of a pixel electrode 311, a buffer layer 312, and an active layer 3, from the insulating layer 414 side. 13 has a stacked structure in which a buffer layer 314 and a common electrode 315 are stacked in that order. Electrode 311, through an opening in the insulating layer 414, provides power to the source and of transistor 409. It is connected to one side of the drain. Transistor 409 is stored in the light-receiving element 310. It has a function to control the transfer of electric charge.

[0363] The light emitted by the light-emitting element 390 is emitted towards the substrate 354. In addition, the light-receiving element 310 Light is incident on the substrate 354 and the adhesive layer 342. The substrate 354 is resistant to visible light. It is preferable to use a material with high permeability.

[0364] Pixel electrodes 311 and 391 can be manufactured using the same material and the same process. The buffer layer 312, buffer layer 314, and common electrode 315 are connected to the photodetector 310 and emitter It is used in common with the optical element 390. The light-receiving element 310 and the light-emitting element 390 share an active layer 31 Except for the difference in the configuration of 3 and the light-emitting layer 393, all components can be the same. This allows the light-receiving element 310 to be incorporated into the display device 400 without significantly increasing the manufacturing process. can.

[0365] A light-shielding layer 358 is provided on the surface of substrate 354 that faces substrate 353. The light-shielding layer 358 is The light-emitting element 390 and the light-receiving element 310 each have openings in positions that overlap with them. Light-shielding layer 35 By providing 8, the range in which the light-receiving element 310 detects light can be controlled. The position and area of ​​the opening in the light-shielding layer, which is located in a position overlapping with the light-receiving element 310, are adjusted. It is preferable to control the light incident on the light-receiving element 310 by doing so. Also, the light-shielding layer 358 By having this, light can be directly incident from the light-emitting element 390 to the light-receiving element 310 without the need for an intermediary object. This can suppress noise. Therefore, it is possible to realize a sensor with low noise and high sensitivity.

[0366] The ends of the pixel electrodes 311 and 391 are covered by a partition wall 416. Electrode 311 and pixel electrode 391 contain a material that reflects visible light, and common electrode 315 reflects visible light It contains a material that is permeable to light.

[0367] Figure 16A shows an example where a portion of the active layer 313 and a portion of the light-emitting layer 393 overlap. This shows that the portion where the active layer 313 and the light-emitting layer 393 overlap is the light-shielding layer 358 and the partition wall 41 It is preferable that it overlaps with 6.

[0368] Transistors 408, 409, and 410 are all located on the circuit board. These transistors are formed on 353. These transistors are made from the same materials and using the same process. It can be manufactured.

[0369] On the substrate 353, there are insulating layers 412, 411, and 425 via an adhesive layer 355. Insulating layer 415, insulating layer 418, and insulating layer 414 are provided in this order. 11 and the insulating layer 425 each have a portion of them that function as the gate insulating layer of each transistor. The insulating layers 415 and 418 are provided covering the transistor. 4 is provided covering the transistor and functions as a planarization layer. The number of marginal layers and the number of insulating layers covering the transistor are not limited; each can be a single layer or two layers. That's fine too.

[0370] At least one layer of the insulating layer covering the transistor is designed to prevent the diffusion of impurities such as water and hydrogen. It is preferable to use a material. This allows the insulating layer to function as a barrier layer. This configuration effectively prevents impurities from diffusing into the transistor from the outside. This effectively suppresses the problem and improves the reliability of the display device.

[0371] Insulating layer 411, insulating layer 412, insulating layer 425, insulating layer 415, and insulating layer 418 For each of these, it is preferable to use an inorganic insulating film. As an inorganic insulating film, for example, nitride Silicon film, silicon oxide nitride film, silicon oxide film, silicon nitride oxide film, aluminum oxide Aluminum film, aluminum nitride film, etc. can be used. In addition, hafnium oxide film, oxide Hafnium nitride film, hafnium oxide nitride film, yttrium oxide film, zirconium oxide film, Gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide Films and neodymium oxide films may also be used. Furthermore, two or more of the above-mentioned insulating films may be stacked and used. That's good too.

[0372] Here, organic insulating films often have lower barrier properties compared to inorganic insulating films. Therefore, The insulating film preferably has an opening near the edge of the display device 400. In region 428, an opening is formed in the insulating layer 414. This allows the edge of the display device 400 to be opened. It is possible to suppress the entry of impurities from the part through the organic insulating film. Alternatively, organic The organic insulating film is formed such that the edges of the insulating film are inside the edges of the display device 400, and the display The organic insulating film may be kept from being exposed at the ends of the device 400.

[0373] In the region 428 near the end of the display device 400, through the opening of the insulating layer 414, It is preferable that layer 418 and protective layer 395 are in contact with each other. In particular, the insulating layer 418 has It is preferable that the inorganic insulating film and the inorganic insulating film of the protective layer 395 are in contact with each other. This further suppresses the entry of impurities into the display unit 362 from the outside via the organic insulating film. This is possible. Therefore, the reliability of the display device 400 can be improved.

[0374] An organic insulating film is preferred for the insulating layer 414, which functions as a planarizing layer. The materials that can be used include acrylic resin, polyimide resin, epoxy resin, poly Mido resin, polyimidoamide resin, siloxane resin, benzocyclobutene resin, pheno Examples include resins and precursors of these resins.

[0375] By providing a protective layer 395 that covers the light-emitting element 390 and the light-receiving element 310, the light-emitting element 390 This suppresses the entry of impurities such as water into the light-receiving element 310, thereby improving their reliability. It is possible.

[0376] The protective layer 395 may be a single layer or a laminated structure. For example, the protective layer 395 may be A laminated structure of an organic insulating film and an inorganic insulating film may also be used. In this case, the edges of the organic insulating film are It is preferable to extend the edges of the inorganic insulating film outwards.

[0377] Figure 16B shows the transistors used in transistors 408, 409, and 410. A cross-sectional view of transistor 401a, which can be used, is shown.

[0378] Transistor 401a is provided on an insulating layer 412 (not shown) and serves as the first gate. A conductive layer 421 that functions as a conductive layer, an insulating layer 411 that functions as a first gate insulating layer, and a semiconductor layer 4 31, an insulating layer 425 that functions as a second gate insulating layer, and a second gate It has a conductive layer 423. The insulating layer 411 is between the conductive layer 421 and the semiconductor layer 431. The insulating layer 425 is located between the conductive layer 423 and the semiconductor layer 431.

[0379] The semiconductor layer 431 has a region 431i and a pair of regions 431n. Region 431i is It functions as a channel-forming region. A pair of regions 431n, one of which functions as a source, The other side functions as a drain. Region 431n has a higher carrier concentration than region 431i. Furthermore, it has high conductivity. Conductive layer 422a and conductive layer 422b are insulating layer 418 and insulating layer 41 They are connected to region 431n through openings provided in 5.

[0380] Figure 16C shows transistors 408, 409, and 410. Figure 16 shows a cross-sectional view of the transistor 401b that can be used. Figure 16 also shows the insulation. This shows an example where layer 415 is not provided. Transistor 401b has an insulating layer 425 which is conductive. It is processed in the same way as layer 423, and the insulating layer 418 and region 431n are in contact.

[0381] The structure of the transistors in the display device of this embodiment is not particularly limited. For example, planar transistors, staggered transistors, inverse staggered transistors, etc. It can be used. In addition, either a top-gate or bottom-gate type transistor A sta structure may also be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed. It's okay if it's not allowed.

[0382] Transistors 408, 409, and 410 have channels A configuration is applied in which the semiconductor layer to be formed is sandwiched between two gates. The transistors may then be driven by supplying them with the same signal. Of the two gates, one is given a potential to control the threshold voltage, and the other is used for driving. The threshold voltage of the transistor may be controlled by applying a potential.

[0383] The crystallinity of semiconductor materials used in transistors is not particularly limited; amorphous semiconductors are also available. Single-crystal semiconductors, or semiconductors having crystalline properties (microcrystalline semiconductors, polycrystalline semiconductors, or partially Any semiconductor having a crystalline region may be used. This is preferable because it suppresses the degradation of transistor characteristics.

[0384] The semiconductor layer of a transistor preferably contains a metal oxide (also called an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may have silicon. For example, amorphous silicon, crystalline silicon (low-temperature polysilicon, single-crystal silicon) Examples include:

[0385] The semiconductor layer is, for example, made of indium and M (where M is gallium, aluminum, silicon). Boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, gelatin Lumanium, Zirconium, Molybdenum, Lanthanum, Cerium, Neodymium, Hafnium, (One or more selected from tantalum, tungsten, and magnesium), and zinc It is preferable that it has, in particular M is aluminum, gallium, yttrium, and It is preferable that the material be one or more species selected from tin.

[0386] In particular, indium (In), gallium (Ga), and zinc (Zn) are used as semiconductor layers. It is preferable to use an oxide containing IGZO.

[0387] In the case of an In-M-Zn oxide semiconductor layer, the original In in the In-M-Zn oxide The atom ratio is preferably greater than or equal to the atom ratio of M. As for the atomic ratio of group elements, the composition is In:M:Zn=1:1:1 or close to it, In:M :Zn=1:1:1.2 or a composition near that, In:M:Zn=2:1:3 or Nearby compositions, In:M:Zn=3:1:2 or nearby compositions, In:M:Zn=4: A composition of 2:3 or nearby, In:M:Zn=4:2:4.1 or nearby, In:M:Zn=5:1:3 or a composition near that, In:M:Zn=5:1:6 or The composition in that vicinity, In:M:Zn=5:1:7 or the composition in that vicinity, In:M:Zn= A composition of 5:1:8 or close to it, In:M:Zn=6:1:6 or close to it, Examples include compositions such as In:M:Zn=5:2:5 or near that composition. This includes a range of ±30% of the desired atomic ratio.

[0388] For example, when describing a composition where the atomic ratio is In:Ga:Zn=4:2:3 or close to it... When the atomic ratio of In is 4, the atomic ratio of Ga is between 1 and 3, and the atoms of Zn This includes cases where the numerical ratio is between 2 and 4. Also, cases where the atomic ratio is In:Ga:Zn = 5:1:6. Or, when describing a composition in the vicinity of that, the atomic ratio of In is 5, and the atomic number of Ga This includes cases where the ratio is greater than 0.1 and less than or equal to 2, and the atomic ratio of Zn is between 5 and 7. Furthermore, when describing the composition as having an atomic ratio of In:Ga:Zn = 1:1:1 or close to it, When the atomic ratio of In is set to 1, the atomic ratio of Ga is greater than 0.1 and less than or equal to 2, Z This includes cases where the atomic ratio of n is greater than 0.1 and less than or equal to 2.

[0389] The transistor 410 in circuit 364 and the transistor 408 in the display unit 362 And transistor 409 may have the same structure or a different structure. The structures of the multiple transistors in 364 may all be the same, or there may be two or more different types. It is also possible that the structures of the multiple transistors in the display unit 362 are all the same. It's fine to have more than one type, and there can be two or more types.

[0390] A connection portion 404 is provided in the area of ​​substrate 353 where substrate 354 does not overlap. In the connecting section 404, the wiring 365 is connected to the FPC 372 via the conductive layer 366 and the connecting layer 442. They are electrically connected. The upper surface of the connection part 404 is the same as the pixel electrode 311 and the pixel electrode 391. A conductive layer 366 obtained by processing a conductive film is exposed. As a result, the connection part 404 The FPC372 can be electrically connected to the FPC372 via the connecting layer 442.

[0391] Various optical components can be placed on the outside of the substrate 354. These optical components include polarizing elements. Examples include plates, phase difference plates, light diffusion layers (such as diffusion films), anti-reflective layers, and light-gathering films. Furthermore, the outside of the substrate 354 has an antistatic film to suppress the adhesion of dust, and dirt adheres to it. A water-repellent film to prevent damage, a hard coat film to suppress scratches during use, an impact-absorbing layer, etc. You may place it there.

[0392] Using flexible materials for substrates 353 and 354 increases the flexibility of the display device. It is possible to do so. Furthermore, although not limited to this, the substrate 353 and the substrate 354 can be fitted with glass. Materials such as quartz, ceramics, sapphire, and resin can be used.

[0393] The adhesive layer can be a photocuring adhesive such as an UV-curing type, a reaction-curing adhesive, or a thermosetting adhesive. Various types of curing adhesives, such as anaerobic adhesives, can be used. Epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imi Plastic resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, E Examples include VA (ethylene vinyl acetate) resin. In particular, the moisture permeability of epoxy resins, etc. Materials with low properties are preferred. A two-part resin mixture may also be used. Furthermore, adhesive sheets, etc. You may use it.

[0394] As a connecting layer, an anisotropic conductive film (ACF) is used. (Active Film), Anisotropic Conductive Paste (ACP: Anisotropic Conductive Film) You can use inductive pastels, etc.

[0395] In addition to the gate, source, and drain of a transistor, various wirings that constitute a display device and Materials that can be used for conductive layers such as electrodes include aluminum, titanium, and chromium. Nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten Examples include metals such as tungsten, and alloys in which such metals are the main component. A film containing this material can be used as a single layer or as a multilayer structure.

[0396] Furthermore, examples of conductive materials that are translucent include indium oxide, indium tin oxide, and indium tin oxide. Conductive oxides or graphites such as zinc oxide, zinc oxide, and zinc oxide containing gallium You can use silver, platinum, magnesium, nickel, or tungsten. Metal materials such as tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium. Alternatively, an alloy material containing the metal material can be used. Or, a nitride of the metal material. (For example, titanium nitride) may be used. When using nitrides, it is preferable to make them thin enough to be translucent. A laminated film of the aforementioned material can be used as a conductive layer. For example, an alloy of silver and magnesium and Using a multilayer film of indium tin oxide is preferable because it can improve conductivity. These include conductive layers such as various wirings and electrodes that constitute the display device, light-emitting elements and photodetectors. The conductive layer (a conductive layer that functions as a pixel electrode or common electrode) of the child (or light-emitting element) It can be used for any purpose.

[0397] Examples of insulating materials that can be used for each insulating layer include acrylic resin and epoxy resin. Resins such as fats, silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, acid Examples include inorganic insulating materials such as aluminum oxide.

[0398] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0399] (Embodiment 3) This embodiment describes a circuit that can be used in a display device according to one aspect of the present invention. ru.

[0400] Figure 17A shows a block diagram relating to pixels of a display device according to one embodiment of the present invention.

[0401] The pixels are OLED, OPD (Organic Photo Diode), and sensors. The circuit (referred to as Sensing Circuit) and the driving transistor (Driving Transistors (also known as Switching Transistors) and switching transistors (also known as Transistors) It has a sistor (written as sistor).

[0402] Light emitted from an OLED is reflected by an object (referred to as "Object"), and that reflected light By receiving light with an OPD, the object can be imaged. One aspect of the present invention is that It can function as a touch sensor, image sensor, image scanner, etc. This invention One aspect of this involves applying biometric authentication by capturing images of fingerprints, palm prints, blood vessels (veins, etc.). It can also capture images of printed materials or objects containing photographs, text, etc. It can also be obtained as image information.

[0403] The drive transistor and selection transistor constitute the drive circuit for driving the OLED. The driving transistor has the function of controlling the current flowing to the OLED, and the OLED It can emit light with brightness corresponding to the current. The selection transistor selects and deselects pixels. It has a control function. Video data (V) is input from an external source via a selection transistor. The value (e.g., voltage value) of the IDEO Data determines the drive transistor and OLE The magnitude of the current flowing through D is controlled, allowing the OLED to emit light at the desired luminescence brightness. ru.

[0404] The sensor circuit corresponds to the drive circuit for controlling the operation of the OPD. A reset operation that resets the potential of the OPD electrodes, and the OPD adjusts according to the amount of light being irradiated. The exposure operation accumulates charge, and the charge accumulated in the OPD is transferred to a node in the sensor circuit. Transfer operation, and a signal (e.g., voltage or current) corresponding to the magnitude of the charge is read out externally. The circuit outputs the reading data as sensing data. It can control actions such as [specific actions].

[0405] The pixel shown in Figure 17B has a memory section connected to the drive transistor. This is the main difference from the above.

[0406] The memory section is provided with weight data. The input consists of video data received via a selection transistor and heavy data held in the memory section. The data obtained by adding the data is given. The weight data held in memory is used. The brightness of the OLED can be changed from the brightness when only video data is provided. Specifically, it becomes possible to increase or decrease the brightness of the OLED. For example, increasing the brightness of an OLED display can improve the light-receiving sensitivity of a sensor.

[0407] Figure 17C shows an example of a pixel circuit that can be used in the sensor circuit described above.

[0408] The pixel circuit PIX1 shown in Figure 17C consists of a light-receiving element PD, transistor M1, and transistor It has M2, transistor M3, transistor M4, and capacitor C1. Here, the photodetector An example using a photodiode as a sub-PD is shown.

[0409] The photodetector PD has its cathode electrically connected to wiring V1 and its anode connected to transistor M1. It is electrically connected to either the source or drain of transistor M1. The gate of transistor M1 is wired Electrically connected to TX, with the source or drain being one electrode of capacitance C1, the transient One of the sources or drains of transistor M2 is electrically connected to the gate of transistor M3. Transistor M2 has its gate electrically connected to wiring RES, and its source or dray The other end of the transistor is electrically connected to wiring V2. Transistor M3 has either a source or a drain. One end is electrically connected to wiring V3, and the other end, which is either the source or drain, is connected to the source of transistor M4. Electrically connect to either the gate or the drain. Transistor M4 has its gate wired to SE. It is electrically connected to the source or drain, and the other end is electrically connected to the wiring OUT1.

[0410] A constant potential is supplied to wiring V1, wiring V2, and wiring V3, respectively. Photodetector PD When driving with reverse bias, supply a potential lower than the potential of wiring V1 to wiring V2. Transistor M2 is controlled by the signal supplied to wiring RES, and transistor A function that resets the potential of the node connected to the gate of M3 to the potential supplied to wiring V2. It has a transistor M1 controlled by a signal supplied to the wiring TX, and a photodetector P It has a function to control the timing of transferring the charge accumulated in D to the above node. Zista M3 functions as an amplifying transistor that outputs according to the potential of the above node. Transistor M4 is controlled by a signal supplied to wiring SE, and responds to the potential of the above node. The output is wired to OUT1 and used as a selector transistor for reading the output with an external circuit. To be able to.

[0411] Here, the light-receiving element PD corresponds to the OPD mentioned above. Also, the output from wiring OUT1 is The electric potential or current corresponds to the sensing data mentioned above.

[0412] Figure 17D shows an example of a pixel circuit for driving the above-mentioned OLED.

[0413] The pixel circuit PIX2 shown in Figure 17D consists of a light-emitting element EL, a transistor M5, and a transistor It has M6, transistor M7, and capacitor C2. Here, as the light-emitting element EL, An example using diodes is shown. In particular, an organic EL element is used as the light-emitting element (EL). It is preferable.

[0414] The light-emitting element EL corresponds to the OLED mentioned above, and the transistor M5 is the selected transistor mentioned above. This corresponds to the above drive transistor, and transistor M6 corresponds to the above drive transistor. Also, the wiring VS is above This corresponds to the wiring through which the video data is input.

[0415] Transistor M5 has its gate electrically connected to wiring VG, and one of its sources or drains One side is electrically connected to the wiring VS, and the other side is either the source or drain, and one electrode is connected to the capacitance C2. , and electrically connect to the gate of transistor M6. The source or One end of the drain is electrically connected to wiring V4, and the other end is connected to the anode of the light-emitting element EL, and Connect electrically to either the source or drain of transistor M7. The gate is electrically connected to wiring MS, and the other side of the source or drain is electrically connected to wiring OUT2. Connect electrically. The cathode of the light-emitting element (EL) is electrically connected to wiring V5.

[0416] A constant potential is supplied to wiring V4 and wiring V5, respectively. Anode side of light-emitting element EL The cathode side can be made to a higher potential than the anode side. Transistor M 5 is controlled by a signal supplied to wiring VG and controls the selected state of pixel circuit PIX2. It functions as a selection transistor for that purpose. Also, transistor M6 is supplied to the gate. It functions as a drive transistor that controls the current flowing to the light-emitting element (EL) according to the potential. When transistor M5 is conducting, the potential supplied to wiring VS is the same as that of transistor M6. It is supplied to the gate, and the luminescence brightness of the light-emitting element (EL) can be controlled according to its potential. Transistor M7 is controlled by a signal supplied to wiring MS, and transistor M6 and light emission The function is to set the potential between element EL and the wiring OUT2 as the potential applied to the transistor M6 The function of outputting the potential between the and the light-emitting element EL to the outside via wiring OUT2, and also It possesses both.

[0417] Figure 17E shows an example of a pixel circuit with a memory section, applicable to the configuration illustrated in Figure 17B. This indicates.

[0418] The pixel circuit PIX3 shown in Figure 17E is a combination of the above-mentioned pixel circuit PIX2, with transistor M8 and It has a configuration with added quantity C3. In addition, in the pixel circuit PIX3, the above pixel circuit PIX2 The wiring VS is designated as wiring VS1, and the wiring VG is designated as wiring VG1.

[0419] Transistor M8 has its gate electrically connected to wiring VG2, and its source and drain are connected. One end is electrically connected to wiring VS2, and the other end is electrically connected to one electrode of capacitance C3. Quantum capacitor C3 has the other electrode connected to the gate of transistor M6, one electrode connected to capacitor C2, and the other electrode connected to transistor M6. Connect electrically to the source and drain of the ZISTA M5.

[0420] Wiring VS1 corresponds to the wiring to which the above video data is given. Wiring VS2 corresponds to the above weight This corresponds to the wiring to which data is provided. The node to which the gate of transistor M6 is connected is This corresponds to the memory section mentioned above.

[0421] This section explains an example of how the pixel circuit PIX3 operates. First, from wiring VS1, the transient... Write the first potential to the node to which the gate of transistor M6 is connected via sta M5. Subsequently, by making transistor M5 non-conductive, the node becomes floating. This is the state. Next, from wiring VS2, via transistor M8 to one electrode of capacitor C3 Write the second potential. This causes the capacitive coupling of capacitor C3 to work in accordance with the second potential. The potential of the above node changes from the first potential to the third potential. Then, transistor M A current corresponding to the third potential flows through 6 and the light-emitting element EL, causing it to emit light corresponding to that potential. The light-emitting element (EL) emits light at a certain temperature.

[0422] In this embodiment, the display device emits light in a pulsed manner to display an image. It may be displayed. By shortening the driving time of the light-emitting element, the power consumption of the display panel is reduced. Furthermore, heat generation can be suppressed. In particular, organic EL elements have excellent frequency characteristics. Therefore, it is suitable. The frequency can be, for example, between 1 kHz and 100 MHz. Also, a driving method that causes light to be emitted by changing the pulse width (also called duty cycle driving) can be used. good.

[0423] Here, the pixel circuit PIX1 has transistors M1, M2, and Transistor M3, and transistor M4, transistor M5 of the pixel circuit PIX2, The transistors M6 and M7, and the transistor M8 in the pixel circuit PIX3, Transitions using metal oxides (oxide semiconductors) in the semiconductor layer where each channel is formed It is preferable to apply the ta.

[0424] Furthermore, in transistors M1 to M8, silicon is used in the semiconductor where the channel is formed. Transistors with capacitors applied can also be used. In particular, single-crystal silicon, polycrystalline silicon By using highly crystalline silicon such as crystalline silicon, it is possible to achieve high field-effect mobility. This is preferable because it enables faster operation.

[0425] Furthermore, an oxide semiconductor is applied to one or more of the transistors M1 to M8. As a configuration that uses transistors with silicon applied to them, That's good too.

[0426] For example, transistor M1 functions as a switch to hold charge, Transistors M2, M5, M7, and M8 exhibit significant off-currents. It is preferable to use a transistor that employs an oxide semiconductor with low capacitance. The above-mentioned transistors can be configured to use transistors that incorporate silicon. .

[0427] Furthermore, in pixel circuits PIX1, PIX2, and PIX3, the transistor Although the term "transistor" is written as an n-channel type transistor, a p-channel type transistor is also used. It can also be used. Alternatively, an n-channel transistor and a p-channel transistor A composition containing both "ta" and "ta" characters is also acceptable.

[0428] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0429] (Embodiment 4) In this embodiment, an example of a laminated panel configuration, which is one type of display panel that can be easily enlarged, Examples of its application will be explained with reference to the drawings.

[0430] One aspect of the present invention involves enlarging a display by arranging multiple display panels so that some overlap. This is a display panel that allows for this. Also, of the two stacked display panels, at least the display side The display panel located at the top has a portion adjacent to the display unit that transmits visible light. The pixels of the display panel located on the side and the visible light-transmitting part of the display panel located on the upper side The two panels are placed on top of each other. This allows the two display panels to be viewed from the display side (plan view). In this case, it becomes possible to display the images shown in these images seamlessly and continuously. .

[0431] For example, one aspect of the present invention is a laminate having a first display panel and a second display panel. It is a panel. The first display panel has a first region, and the first region has a first pixel and The second display panel has a second region, a third region, and a fourth region. The second region has a third pixel, and the third region is a device that transmits visible light. The fourth region has the function of blocking visible light. Also, the second region of the first display panel The pixels of the second display panel and the third region of the second display panel have overlapping regions. The aperture ratio of the pixel is preferably greater than the aperture ratio of the first pixel.

[0432] One or both of the first and second display panels described above may have the following features illustrated above. A display device comprising a light-emitting element and a light-receiving element can be used. In other words, the above-mentioned At least one of the first pixel, the second pixel, and the third pixel has a light-emitting element and a light-receiving element. It can also be said that it is.

[0433] More specifically, the configuration can be as follows:

[0434] [Configuration Example 1] [Display Panel] Figure 18A is a schematic top view of a display panel 500 included in a display device according to one embodiment of the present invention. ru.

[0435] The display panel 500 has a display area 501 and, adjacent to the display area 501, a visible light-transmitting panel. It comprises a region 510 and a region 520 having a portion that blocks visible light. In Figure 18A, , display panel 500 with FPC (Flexible Printed Circuit) 5 An example where 12 is provided is shown.

[0436] Here, the display panel 500 can display an image in the display area 501 even when it is a standalone unit. Furthermore, even if the display panel 500 is a standalone unit, it can capture images using the display area 501. It is possible.

[0437] Region 510 contains, for example, a pair of substrates that constitute a display panel 500, and the pair of substrates A sealing material or the like may be provided to seal the display element held between them. The member provided in region 510 is made of a material that is transparent to visible light.

[0438] Area 520 is provided with wiring that electrically connects to pixels included in the display area 501, for example. In addition to this wiring, there is also a drive circuit (scan line drive) for driving the pixels. Circuits such as signal line drive circuits, or protection circuits may be provided. Area 520 is a terminal (also called a connection terminal) that is electrically connected to the FPC512, and said terminal This also includes areas where electrical wiring and other connections are provided.

[0439] For detailed explanations of cross-sectional configurations of display panels and other aspects, refer to Embodiments 1 and 2.

[0440] [Laminated Panel] A laminated panel 550 according to one aspect of the present invention comprises a plurality of the above-described display panels 500. Figure 1 8B shows a schematic top view of a laminated panel 550 equipped with three display panels.

[0441] Furthermore, from here on, we will refer to each display panel in relation to each other, and to the components contained within each display panel in relation to each other. Or, when describing the components related to each display panel in a distinct way, these symbols The alphabet will be added later. Also, unless otherwise specified, parts of them will overlap. Of the multiple display panels, the display panel located at the very bottom (opposite the display surface) The symbol "a" is added to the components thereof, and one or more are arranged in order above them. For display panels and their components, the letters are added after the code. The details will be added in order. Also, unless otherwise specified, the configuration will include multiple display panels. Even when providing explanations, the explanations should cover matters common to each display panel or component. In some cases, the letters are omitted in the explanation.

[0442] The laminated panel 550 shown in Figure 18B consists of display panel 500a, display panel 500b, and It is equipped with a 500c display panel.

[0443] Display panel 500b is positioned such that a portion of it is superimposed on the upper side (display surface side) of display panel 500a. It is placed there. Specifically, the display area 501a of the display panel 500a and the display panel 500 The visible light-transmitting region 510b of b is superimposed, and the display area 5 of the display panel 500a The area 520b of the display panel 500b that blocks visible light is arranged so that it does not overlap with area 01a. It is being done.

[0444] Furthermore, a portion of the display panel 500c overlaps with the upper side (display surface side) of the display panel 500b. They are arranged horizontally. Specifically, the display area 501b of the display panel 500b and the display panel The visible light-transmitting region 510c of 500c is superimposed, and the display panel 500b Area 501b and area 520c, which blocks visible light from the display panel 500c, do not overlap. It is located there.

[0445] Since a visible light-transmitting area 510b is superimposed on the display area 501a, the display area 50 The entirety of 1a can be viewed from the display surface side. Similarly, the display area 501b is also an area The superimposition of 510c allows the entire image to be viewed from the display side. Therefore, Display area 501a, display area 501b, and display area 501c are arranged seamlessly in a region This makes it possible to use the display area 551 of the stacked panel 550.

[0446] The stacked panel 550 can expand the display area 551 by the number of display panels 500. To do so. At this time, all display panels 500 have a display panel with an imaging function (i.e., By using a display panel having pixels that include light-emitting elements and light-receiving elements, the display area 55 The entire area of ​​1 can be used as the imaging area.

[0447] However, this is not limited to the above, and includes display panels with imaging capabilities and those without imaging capabilities (for example) It may be combined with a display panel (which does not have a light-receiving element). For example, it may capture only the necessary parts. A display panel with imaging capabilities is used, while a display panel without imaging capabilities is used for all other applications. It is also possible.

[0448] [Configuration Example 2] Figure 18B shows a configuration in which multiple display panels 500 are stacked in one direction, but vertically Multiple display panels 500 may be arranged in overlapping positions in both the forward and backward directions.

[0449] Figure 19A shows an example of a display panel 500 in which the shape of region 510 differs from that of Figure 18A. The display panel 500 shown in Figure 19A transmits visible light along two sides of the display area 501. Area 510 is located there.

[0450] Figure 19B shows a stacked panel 5 with two display panels 500 arranged vertically and two horizontally, as shown in Figure 19A. Figure 50 shows a schematic perspective view. Figure 19C shows the opposite side of the display surface of the laminated panel 550. This is a schematic diagram of a side view.

[0451] In Figures 19B and 19C, along the shorter side of the display area 501a of the display panel 500a. The area and a portion of area 510b of the display panel 500b are superimposed. The area along the long side of the display area 501a of panel 500a and area 5 of display panel 500c A portion of 10c is superimposed. Also, area 510d of the display panel 500d is a display The area along the long side of the display area 501b of display panel 500b, and the display area of ​​display panel 500c It is provided superimposed on the area along the shorter side of the indicated area 501c.

[0452] Therefore, as shown in Figure 19B, display area 501a, display area 501b, display area The area where 501c and display area 501d are seamlessly arranged is the display area of ​​the laminated panel 550. It becomes possible to designate the region as 551.

[0453] Here, a flexible material is used for the pair of substrates used in the display panel 500, and the display panel It is preferable that the 500 has flexibility. This is achieved, for example, in Figure 19B, Figure 1 As shown in the display panel 500a in 9C, when the FPC 512a, etc. are provided on the display surface side In conjunction with this, a portion of the display panel 500a on the side where the FPC512a is installed is curved, and the FPC51 Position 2a so that it overlaps the lower part of the display area 501b of the adjacent display panel 500b. This is possible. As a result, the FPC512a is physically separated from the back surface of the display panel 500b. They can be positioned without interfering with each other. Also, display panel 500a and display panel 500b When overlapping and bonding them, there is no need to consider the thickness of the FPC512a, so the display panel The height between the upper surface of area 510b of 500b and the upper surface of display area 501a of display panel 500a The difference in size can be reduced. As a result, the edge of the display panel 500b located on the display area 501a This can prevent the part from being visible.

[0454] Furthermore, by making each display panel 500 flexible, the display area of ​​display panel 500b The height of the top surface in area 501b is the top surface of the display area 501a of the display panel 500a. The display panel 500b can be gently curved to match its height. Therefore, except for the area near where display panel 500a and display panel 500b overlap, each display area It is possible to align the height of the area, and the display area 551 of the stacked panel 550 displays the image. It can improve the quality of the display.

[0455] The above explanation used the relationship between display panel 500a and display panel 500b as an example, but adjacent The same applies between the two display panels.

[0456] Furthermore, in order to reduce the height difference between two adjacent display panels 500, the display panel 500 A thinner thickness is preferable. For example, the thickness of the display panel 500 should be 1 mm or less, preferably 3 mm. It is preferable that the particle size be 00 μm or less, and more preferably 100 μm or less.

[0457] Furthermore, a substrate for protecting the display area 551 of the laminated panel 550 (for example, in Embodiment 1) A second substrate may be provided in the display panel. Alternatively, a single circuit board may be provided across multiple display panels.

[0458] Note that although a configuration of stacking four display panels 500 is shown here, the display panel 500 By increasing the number of units, it becomes possible to create extremely large laminated panels. By changing the arrangement of the display panels 500, the contour shape of the display area of ​​the stacked panel can be changed to a circle or an ellipse. It can be made into various shapes such as circles and polygons. Furthermore, the display panel 500 can be arranged three-dimensionally. By placing it in this position, a laminated panel with a display area having a three-dimensional shape can be realized.

[0459] [Application Examples] The above laminated panels are used for the interior or exterior walls of houses or buildings, or for the interior of vehicles. It can be incorporated along the curved surface of the exterior. Figure 20 shows a laminated panel according to one aspect of the present invention. This shows an example of how the device can be mounted on a vehicle.

[0460] Figure 20 shows an example of the configuration of a vehicle equipped with a display unit 5001. The display unit 5001 has the above-mentioned A layered panel is applied. Note that Figure 20 shows the display unit 5001 mounted on a right-hand drive vehicle. The following are examples of this, but it is not limited to this and can also be installed in left-hand drive vehicles. In addition, the left and right arrangement of the configuration shown in Figure 20 is reversed.

[0461] Figure 20 shows the dashboard 5002 and steering wheel 5 located around the driver's and passenger's seats. 003 indicates the windshield 5004, etc. The display unit 5001 is the dashboard. The 5002 is positioned in a predetermined location, specifically around the driver, and has a roughly T-shape. 20 contains multiple display panels 5007 (display panels 5007a, 5007b, 5007c A single display unit 5001 formed using 5007d) is placed on the dashboard 5002. The example shown follows the pattern, but the display unit 5001 may be arranged in multiple locations.

[0462] Furthermore, Figure 20 shows the surface of the passenger-side door 5008a and the driver-side door 5008b. Display units 5009a and 5009b are provided, respectively. a and the display unit 5009b can be formed using one or more display panels. .

[0463] Display unit 5009a and display unit 5009b are arranged facing each other, and further display unit 5001 connects the end of display unit 5009a and the end of display unit 5009b. It is located in the Schboard 5002. This allows the driver and front passenger to see forward. and both sides are surrounded by display unit 5001, display unit 5009a, and display unit 5009b. This situation occurs. For example, one of the display units 5009a, 5001, and 5009b By displaying subsequent images, a high level of immersion can be provided to the driver and passengers. .

[0464] The multiple display panels 5007 may also be flexible. In this case, the display unit 50 01 can be processed into complex shapes, and the display unit 5001 can be used on the dashboard 5002, etc. Configurations that follow the curved surface, such as the handle connection part, instrument display part, air outlet 5006, etc. This makes it easy to implement configurations such as one in which the display area of ​​the display unit 5001 is not provided.

[0465] In addition, multiple cameras 5005 for photographing the rear and side conditions may be installed outside the vehicle. (See Figure 20) However, the example shows installing camera 5005 instead of side mirrors, but side mirrors You may install both a camera and a dashcam.

[0466] Camera 5005 can use CCD cameras, CMOS cameras, etc. In addition, an infrared camera may be used in combination with these cameras. The higher the temperature of the subject, the higher the output level, so it can detect living organisms such as people and animals. It can be extracted.

[0467] The image captured by camera 5005 is displayed on one or more of the display panels 5007. It can provide power. This display unit 5001 is mainly used to assist in driving the vehicle. Camera 5 The rear and side view is captured by 005 with a wide field of view, and the image is displayed on the display panel 5007. By displaying this information, it becomes possible to see the driver's blind spots, thus preventing accidents. ru.

[0468] Furthermore, by using the display system according to one aspect of the present invention, the display panel 5007a , compensates for the discontinuity of the video at the junctions of 5007b, 5007c, and 5007d. This makes it possible to display images with seamless seams, which is especially useful when driving. The visibility of the display unit 5001 can be improved.

[0469] Furthermore, a distance image sensor is installed on the roof of the car, and the image obtained by the distance image sensor is... The image may be displayed on the display unit 5001. The distance image sensor may be an image sensor or a light-emitting sensor. LIDAR (Light Detection and Ranging), etc. It can be used. The image obtained by the image sensor and the depth image sensor By displaying the obtained image on the display unit 5001, more information is provided to the driver. It can assist with driving.

[0470] Furthermore, the display unit 5001 displays map information, traffic information, television images, DVD images, etc. It may have the function of displaying panels 5007a, 5007b, 5007c, Furthermore, the 5007d can be used as a single display screen to show map information in a larger format. The number of display panels 5007 can be increased depending on the image being displayed.

[0471] Also, the information displayed on display panels 5007a, 5007b, 5007c, and 5007d The video can be freely set according to the driver's preference. For example, television video, DV The video is displayed on the left display panel 5007d, and the map information is displayed on the central display panel 5007 Displayed on b, the instruments are displayed on the right-hand display panel 5007c, and the audio is near the gear shift. It can be displayed on the display panel 5007a located beside the driver's seat (between the driver's and passenger's seats). By combining the display panel 5007 with the display unit 5001, a fail-safe mechanism is provided for the display unit 5001. It is possible to add functionality. For example, if a display panel 5007 malfunctions for some reason... However, the display area can be changed, and the display can be performed using other display panels 5007. .

[0472] The images displayed on display units 5009a and 5009b are also the images of the driver or passenger. It can be freely configured according to your preferences. For example, if a child is sitting in the passenger seat, The display unit 5009a can display children's content such as anime.

[0473] Furthermore, the display units 5009a and 5009b display images acquired by the camera 5005, etc. It can display images that are synchronized with the scenery visible from the car window, which are then combined. For the driver and passengers, the image that can be seen through doors 5008a and 5008b is The information can also be displayed on display units 5009a and 5009b. And passengers can experience a sensation as if they are floating.

[0474] Furthermore, at least of the display panels 5007a, 5007b, 5007c, and 5007d One preference is that a display panel with an imaging function is applied. Also, the display unit 500 One or more of the display panels provided in 9a and the display unit 5009b also have an imaging function. You can also apply a display panel.

[0475] For example, by the driver touching the display panel, the vehicle can perform fingerprint authentication, palm print authentication, and other similar methods. Biometric authentication is possible. When the driver is authenticated by biometric authentication, the vehicle will perform personal authentication. It may also have functions to adjust the user's preferred environment. For example, seat position adjustment, steering wheel position Adjusting the position, adjusting the orientation of the camera 5005, setting the brightness, setting the air conditioner, and the wiper speed. Settings such as frequency, audio volume, and loading of audio playlists. It is preferable to perform the above steps after authentication.

[0476] Furthermore, once the driver is authenticated by biometric authentication, the vehicle becomes ready to drive, for example, It can also be left running, eliminating the need for a key, which is preferable. stomach.

[0477] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0478] (Embodiment 5) In this embodiment, the gold that can be used in the transistor described in the above embodiment is This section explains oxides (also known as oxide semiconductors).

[0479] The metal oxide preferably contains at least indium or zinc. In particular, indium It is preferable to include aluminum and zinc. In addition to these, aluminum, gallium, and zinc are also preferable. It is preferable that it contains tetium, tin, etc. Also, boron, silicon, titanium Iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neo Selected from materials such as zinc, hafnium, tantalum, tungsten, magnesium, and cobalt. It may contain one or more types.

[0480] Furthermore, metal oxides can be produced by sputtering, metal-organic chemical vapor deposition (MOCVD), and other methods. (e.g., organic chemical vapor deposition) method Chemical vapor deposition (CVD) method, By methods such as Atomic Layer Deposition (ALD) It can be formed.

[0481] <Classification of crystal structures> The crystal structure of oxide semiconductors is amorphous (completely amorphous) (including hous), CAAC (c-axis-aligned crystalline ), nc(nanocrystalline), CAC(cloud-aligned (composite), single crystal, and polycrystalline (pol Examples include (y crystal), etc.

[0482] The crystal structure of the film or substrate can be determined by X-ray diffraction (XRD). It can be evaluated using the ion spectrum. For example, GIXD (Grazing - Evaluation using the XRD spectrum obtained from the Incidence XRD measurement. This can be done. The GIXD method is also known as the thin-film method or the Seemann-Bohlin method. .

[0483] For example, in a quartz glass substrate, the peak shape of the XRD spectrum is almost symmetrical. On the other hand, in IGZO films with a crystalline structure, the shape of the peaks in the XRD spectrum is asymmetrical. It is symmetrical. The asymmetrical shape of the peaks in the XRD spectrum indicates that it is present in the membrane or base. This clearly indicates the presence of crystals within the plate. In other words, the shape of the peaks in the XRD spectrum is left and right. If a film or substrate is not symmetrical, it cannot be said to be in an amorphous state.

[0484] Furthermore, the crystal structure of the film or substrate is determined by nano-beam diffraction (NBED). Diffraction patterns observed by electron diffraction (extremely small) It can be evaluated using electron diffraction patterns (also called electron diffraction patterns). For example, the diffraction pattern of a quartz glass substrate. In the folding pattern, a halo is observed, confirming that the quartz glass is in an amorphous state. Furthermore, the diffraction pattern of the IGZO film deposited at room temperature showed spot-like patterns rather than halos. Turns are observed. Therefore, the IGZO film deposited at room temperature is neither crystalline nor amorphous. It is presumed that this is an intermediate state, not a state, and therefore cannot be concluded to be an amorphous state. ru.

[0485] <<Oxide semiconductor structure>> Note that oxide semiconductors may be classified differently from those described above when considering their structure. For example, oxide semiconductors include single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. They can be divided into: Non-single-crystal oxide semiconductors include, for example, the aforementioned CAAC-OS and n c-OS exists. Furthermore, non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors and pseudo-amorphous oxides. Amorphous-like oxide semiconductor (a-like OS) This includes semiconductors such as iconductors and amorphous oxide semiconductors.

[0486] Here, we will provide details on the CAAC-OS, nc-OS, and a-like OS mentioned above. Then, I will give an explanation.

[0487] [CAAC-OS] CAAC-OS has multiple crystalline regions, and the c-axis of these crystalline regions is oriented in a specific direction. It is an oriented oxide semiconductor. The specific direction refers to the thickness direction of the CAAC-OS film. , in the direction normal to the surface on which the CAAC-OS film is formed, or in the direction normal to the surface of the CAAC-OS film Yes, there is. Furthermore, a crystalline region is a region in which the atomic arrangement has periodicity. Note that the atomic arrangement is categorized If considered as a child arrangement, a crystalline region is also a region with a aligned lattice arrangement. Furthermore, CAAC- OS has a region in which multiple crystal regions are connected in the ab-plane direction, and this region is strained It may have strain. Note that strain refers to the lattice arrangement in a region where multiple crystal regions are connected. The orientation of the grid arrangement changes between a region with aligned grids and another region with aligned grids. This refers to the location. In other words, CAAC-OS is c-axis oriented and has a clear orientation in the ab-plane direction. It is an oxide semiconductor that does not exist.

[0488] Each of the above multiple crystalline regions is composed of one or more minute crystals (with a maximum diameter of 10 It is composed of crystals smaller than nm. Furthermore, the maximum diameter of the crystalline region is less than 10 nm. If this occurs, the size of the crystalline region may be around several tens of nanometers.

[0489] Also, In-M-Zn oxide (element M is aluminum, gallium, yttrium, sulfite) In one or more types selected from materials such as titanium, CAAC-OS is an indicator. A layer containing um (In) and oxygen (hereinafter referred to as the In layer), and an element M, zinc (Zn), and acid A layered crystalline structure (also called a layered structure) is formed by stacking layers containing an element (hereinafter referred to as (M,Zn) layer). It tends to have (u). Furthermore, indium and element M are mutually substitutable. Therefore The (M,Zn) layer may contain indium. Also, the In layer contains element M. This may occur. Furthermore, the In layer may also contain Zn. This layered structure is, for example, , high-resolution TEM (Transmission Electron Microscop) e) In the image, it is observed as a grid pattern.

[0490] For example, when structural analysis of a CAAC-OS film is performed using an XRD device, the θ / 2θ scale is obtained. Out-of-plane XRD measurements using the CANR showed two peaks indicating c-axis orientation. It is detected at θ=31° or nearby. Note that the position of the peak indicating c-axis orientation (value of 2θ) ) may vary depending on the type and composition of the metal elements that make up CAAC-OS.

[0491] Furthermore, for example, in the electron diffraction pattern of a CAAC-OS film, multiple bright spots (spots) (T) is observed. Note that one spot and another spot are separated by the incident electron beam that has passed through the sample. Observations are made at point-symmetric positions with respect to the spot (also called the direct spot) as the center of symmetry. ru.

[0492] When the crystal region is observed from the specific direction described above, the lattice arrangement within that crystal region is a hexagonal lattice. While this is the basic principle, the unit cell is not necessarily a regular hexagon and may be a non-regular hexagon. Also, The above distortion may have a grid arrangement such as a pentagon or heptagon. -In OS, clear grain boundaries were confirmed even near the strain. This is not possible. In other words, the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This indicates that CAAC-OS has a dense arrangement of oxygen atoms in the ab-plane direction. This is because, for example, the substitution of metal atoms changes the bond distance between atoms. This is thought to be because it allows for distortion to be tolerated.

[0493] Furthermore, a crystal structure in which clear grain boundaries can be observed is known as a polycrystalline structure. It is called al(al). The grain boundaries become recombination centers, trapping carriers and forming transistors. This is likely to cause a decrease in on-current and a decrease in field-effect mobility. CAAC-OS, which lacks visible grain boundaries, has a crystal structure suitable for the semiconductor layer of transistors. It is one of the crystalline oxides that possesses Zn. Furthermore, CAAC-OS requires the presence of Zn. A configuration in which In-Zn oxide and In-Ga-Zn oxide are made of In acid It is preferable because it can suppress the generation of grain boundaries more effectively than oxidized materials.

[0494] CAAC-OS is an oxide semiconductor with high crystallinity and no clearly defined grain boundaries. Therefore, CAAC-OS is less prone to a decrease in electron mobility caused by grain boundaries. Furthermore, the crystallinity of oxide semiconductors can decrease due to the inclusion of impurities, the formation of defects, etc. Because of this, CAAC-OS is an oxide semiconductor with few impurities and defects (such as oxygen vacancies). It can also be said that oxide semiconductors containing CAAC-OS have stable physical properties. Therefore, oxide semiconductors containing CAAC-OS are highly heat-resistant and reliable. AC-OS is stable even at high temperatures (so-called thermal budget) during the manufacturing process. Yes. Therefore, using CAAC-OS in OS transistors expands the degree of freedom in the manufacturing process. This becomes possible.

[0495] [nc-OS] nc-OS is used in minute regions (for example, regions between 1 nm and 10 nm, especially regions larger than 1 nm). It has periodicity in the atomic arrangement in the region of 3 nm or less. In other words, nc-OS is micro It has small crystals. The size of these minute crystals is, for example, between 1 nm and 10 nm. In particular, because they are between 1 nm and 3 nm in size, these minute crystals are also called nanocrystals. Furthermore, nc-OS shows no regularity in crystal orientation between different nanocrystals. Therefore, the entire film... No orientation is observed. Therefore, depending on the analytical method, nc-OS is a-like O It may be indistinguishable from S or amorphous oxide semiconductors. For example, with respect to nc-OS films. When performing structural analysis using an XRD device, out-of-pl using θ / 2θ scans is obtained. In ane XRD measurements, no peak indicating crystallinity was detected. Furthermore, for nc-OS films... Furthermore, electron beam blasts using electron beams with probe diameters larger than those of nanocrystals (e.g., 50 nm or more) When diffraction (also called limited-field electron diffraction) is performed, a diffraction pattern similar to a halo pattern is obtained. Observed. On the other hand, compared to the nc-OS film, the size is close to or smaller than that of nanocrystals. Electron diffraction (nanobeam) using electron beams with probe diameters (e.g., 1 nm to 30 nm). Also called electron diffraction, when this is performed, a ring-shaped region centered on the direct spot appears. In some cases, electron diffraction patterns with multiple spots observed may be obtained.

[0496] [a-like OS] a-like OS is an oxide having a structure between nc-OS and amorphous oxide semiconductors. It is a semiconductor. an a-like OS has porous or low-density regions. That is, a-lik e OS has lower crystallinity compared to nc-OS and CAAC-OS. e OS has a higher hydrogen concentration in the membrane compared to nc-OS and CAAC-OS.

[0497] <<Oxide Semiconductor Composition>> Next, we will explain the details of CAC-OS mentioned above. Note that CAC-OS is a material composition. Regarding achievement.

[0498] [CAC-OS] CAC-OS refers to, for example, metal oxides in which the elements constituting the metal oxide are between 0.5 nm and 10 nm. Below, preferably, a structure of material that is unevenly distributed with a size of 1 nm to 3 nm or near that size. It is formed. Furthermore, in the following, in metal oxides, one or more metal elements are unevenly distributed. The region containing the metal element is 0.5 nm to 10 nm, preferably 1 nm to 3 nm. A mixture of particles smaller than or near a m in size is also called a mosaic or patchy appearance. .

[0499] Furthermore, CAC-OS is a material that separates into a first region and a second region. This results in a zigzag-like structure, where the first region is distributed within the film (hereinafter also referred to as a cloud-like structure). ) In other words, CAC-OS is a mixture of the first region and the second region. It is a composite metal oxide having the following composition.

[0500] Here, I for the metal elements constituting CAC-OS in In-Ga-Zn oxide The atomic ratios of n, Ga, and Zn are denoted as [In], [Ga], and [Zn], respectively. For example, in CAC-OS in In-Ga-Zn oxide, the first region is This is the region where [In] is greater than the [In] in the composition of the CAC-OS film. Region 2 is the region where [Ga] is greater than the [Ga] in the composition of the CAC-OS film. Or, for example, in the first region, [In] is greater than [In] in the second region. Furthermore, it is a region where [Ga] is smaller than [Ga] in the second region. The second region is one in which [Ga] is greater than [Ga] in the first region, and [In] However, this region is smaller than [In] in the first region.

[0501] Specifically, the first region mentioned above mainly consists of indium oxide, indium zinc oxide, etc. This is a region of minutes. Furthermore, the second region mentioned above is gallium oxide, gallium zinc oxide, etc. This is the region in which In is the main component. In other words, the first region described above can be said to be the region in which In is the main component. It can be replaced. Furthermore, the second region described above can be rephrased as the region with Ga as the main component. It is possible.

[0502] Note that a clear boundary may not be observed between the first region and the second region described above. .

[0503] Furthermore, CAC-OS in In-Ga-Zn oxide refers to In, Ga, Zn, and O In a material composition including, a region in which Ga is the main component and a region in which In is the main component The regions are each mosaic-like, and these regions exist randomly in this configuration. Therefore, it is presumed that CAC-OS has a structure in which metallic elements are unevenly distributed. ru.

[0504] CAC-OS can be formed, for example, by sputtering under conditions where the substrate is not heated. This is possible. Also, when forming CAC-OS by sputtering, the deposition gas is One of the following gases is selected from inert gases (typically argon), oxygen gas, and nitrogen gas. One or more can be used. Also, the flow rate of oxygen gas relative to the total flow rate of the deposition gas during film formation. A lower quantity ratio is preferable, for example, the ratio of the flow rate of oxygen gas to the total flow rate of the film-forming gas during film formation. It is preferable that the amount be 0% or more and less than 30%, preferably 0% or more and 10% or less.

[0505] Furthermore, for example, in CAC-OS in In-Ga-Zn oxide, energy dispersive X-ray spectroscopy (EDX: Energy Dispersive X-ray spectrometry) EDX mapping obtained using oscopy revealed a region with In as its main component (the third A structure in which region 1 and region 2, which is mainly composed of Ga, are unevenly distributed and mixed. It can be confirmed that it possesses [this characteristic].

[0506] Here, the first region is a region with higher conductivity compared to the second region. In other words, the first region In region 1, the flow of carriers causes the metal oxide to exhibit conductivity. Therefore, Therefore, the first region is distributed in a cloud-like manner within the metal oxide, resulting in high field-effect mobility. μ) can be achieved.

[0507] On the other hand, the second region is a region with higher insulating properties compared to the first region. In other words, the second region The distribution of this region within the metal oxide can suppress leakage current.

[0508] Therefore, when CAC-OS is used in a transistor, the conductivity due to the first region and, The insulating properties resulting from the second region work complementaryly to the switching mechanism. The ability (the function to turn it on / off) can be added to CAC-OS. In other words, CAC -OS refers to a material that has conductive properties in some parts and insulating properties in other parts. The material as a whole possesses semiconductor properties. It separates the conductive and insulating functions. This allows us to maximize the functionality of both. Therefore, CAC-OS is transition By using it in the terminal, a high on-current (I on ), high field effect mobility (μ), and good performance It can perform a twisting motion.

[0509] Furthermore, transistors using CAC-OS are highly reliable. Therefore, CAC-OS is It is ideal for various semiconductor devices, including display devices.

[0510] Oxide semiconductors can take on diverse structures, each possessing different properties. One embodiment of the present invention Oxide semiconductors include amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, and C It may have two or more of the following: AC-OS, nc-OS, and CAAC-OS.

[0511] <Transistors containing oxide semiconductors> Next, we will explain the case where the above oxide semiconductor is used in a transistor.

[0512] By using the above oxide semiconductor in a transistor, a transistor with high field-effect mobility is obtained. This can be achieved. Furthermore, highly reliable transistors can be realized.

[0513] It is preferable to use an oxide semiconductor with a low carrier concentration for the transistor. The carrier concentration of oxide semiconductors is 1 × 10⁻⁶ 17 cm -3 The following is preferably 1 × 10 15 c m -3 More preferably 1 × 10 13 cm -3 More preferably 1 × 10 11 cm -3 More preferably 1 × 10 10 cm -3 It is less than 1 × 10 -9 cm - 3 That concludes the explanation. Furthermore, when lowering the carrier concentration of the oxide semiconductor film, the oxide... The impurity concentration in the semiconductor film can be reduced to lower the defect level density. High-purity intrinsic or substantially high-purity intrinsic refers to a substance with a low impurity concentration and a low defect level density. Furthermore, oxide semiconductors with low carrier concentrations are considered to be of high purity intrinsic or substantially high purity intrinsic. It is sometimes called an oxide semiconductor.

[0514] Furthermore, oxide semiconductor films that are high-purity intrinsic or substantially high-purity intrinsic have a defect level density of Because the level is low, the trap level density may also be low.

[0515] Furthermore, the time required for charges trapped in the trap levels of an oxide semiconductor to disappear is... It can behave for a long time, almost like a fixed charge. Therefore, the trap level density is high. Transistors in which a channel formation region is formed in an oxide semiconductor have unstable electrical properties. There are cases where this occurs.

[0516] Therefore, in order to stabilize the electrical characteristics of a transistor, the impurity concentration in the oxide semiconductor is Reducing it is effective. Furthermore, in order to reduce the impurity concentration in oxide semiconductors, It is also preferable to reduce the concentration of impurities in the adjacent membrane. Examples of impurities include hydrogen, nitrogen, and Examples include potassium metals, alkaline earth metals, iron, nickel, and silicon.

[0517] <Impurities> Here, we will explain the effects of various impurities in oxide semiconductors.

[0518] In oxide semiconductors, if silicon or carbon, which are among the Group 14 elements, Defect levels are formed in oxide semiconductors. Therefore, silicon in oxide semiconductors Or the concentration of carbon and the concentration of silicon or carbon near the interface with the oxide semiconductor (secondary ions) Secondary Ion Mass Spectrometry (SIMS) The concentration obtained by the trial is 2 × 10 18 atoms / cm 3 The following are preferably 2 ×10 17 atoms / cm 3 The following applies:

[0519] Furthermore, if an alkali metal or alkaline earth metal is present in the oxide semiconductor, the defect levels will be They may form and generate carriers. Therefore, alkali metals or alkaline earth metals Transistors using oxide semiconductors containing this material tend to exhibit normally-on characteristics. Therefore, alkali metals or alkaline earth metals in oxide semiconductors obtained by SIMS The concentration of the genus is 1 × 10 18 atoms / cm 3 The following is preferably 2 × 10 16 atoms / cm 3 Do the following:

[0520] Furthermore, in oxide semiconductors, when nitrogen is present, electrons, which are carriers, are generated. As the nitrogen concentration increases, it becomes easier to convert to n-type semiconductors. As a result, oxide semiconductors containing nitrogen become semiconductors. The transistor used tends to exhibit normally-on characteristics. Alternatively, oxide semiconductors Furthermore, when nitrogen is present, trap levels may be formed. As a result, transistor The electrical properties of the oxide semiconductor obtained by SIMS may become unstable. The nitrogen concentration inside is 5 × 10 19 atoms / cm 3 Less than 5 × 10 18 ato ms / cm 3 More preferably 1 × 10 18 atoms / cm 3 The following are even more preferable kuha 5×10 17 atoms / cm 3 Do the following:

[0521] Furthermore, the hydrogen contained in oxide semiconductors reacts with the oxygen bonded to the metal atoms to form water. Therefore, an oxygen deficiency may form. When hydrogen enters this oxygen deficiency, the carrier electrons In some cases, a child may be produced. Also, some of the hydrogen combines with the metal atom and oxygen, resulting in a crystal. It can generate electrons that act as carriers. Therefore, an oxide semiconductor containing hydrogen is used. Transistors with this characteristic tend to exhibit normally-on properties. Therefore, hydrogen in oxide semiconductors It is preferable that the SI is reduced as much as possible. Specifically, in oxide semiconductors, The hydrogen concentration obtained by MS is 1 × 10 20 atoms / cm 3 Less than 1x 10 19 atoms / cm 3 Less than 5x10 18 atoms / cm 3less than More preferably 1 × 10 18 atoms / cm 3 Make it less than.

[0522] Using an oxide semiconductor with sufficiently reduced impurities in the channel formation region of a transistor. This allows for the provision of stable electrical characteristics.

[0523] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0524] (Embodiment 6) In this embodiment, an electronic device according to one aspect of the present invention will be described using Figures 21 to 23. do.

[0525] An electronic device according to one aspect of the present invention performs imaging on a display unit and detects touch operations. This allows for improvements to the functionality and convenience of electronic devices.

[0526] Electronic devices according to one aspect of the present invention include, for example, television equipment and desktop devices. Notebook personal computers, computer monitors, digital signage In addition to electronic devices with relatively large screens such as large game machines like pachinko machines, Digital cameras, digital video cameras, digital photo frames, mobile phones, portable games Examples include home electronics devices, personal digital assistants, and audio playback devices.

[0527] An electronic device according to one aspect of the present invention includes a sensor (force, displacement, position, velocity, acceleration, angular velocity, rotation). Number, distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, electric current, voltage, power (including functions for measuring radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation) It is acceptable to have it.

[0528] An electronic device according to one aspect of the present invention can have various functions. For example, various information Functions to display (still images, videos, text images, etc.) on the display unit, touch panel function, calendar Functions to display the date or time, and to run various software (programs). Functions include: wireless communication, and reading programs or data recorded on a recording medium. It can have functions, etc.

[0529] The electronic device 6500 shown in Figure 21A is a portable device that can be used as a smartphone. It is a news terminal device.

[0530] The electronic device 6500 consists of a housing 6501, a display unit 6502, a power button 6503, and a button 6 It includes 504, speaker 6505, microphone 6506, camera 6507, and light source 6508, etc. The display unit 6502 is equipped with a touch panel function.

[0531] The display device shown in Embodiment 2 can be applied to the display unit 6502.

[0532] Figure 21B is a schematic cross-sectional view of the housing 6501, including the end on the microphone 6506 side.

[0533] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and the housing 650 Within the space surrounded by 1 and protective member 6510, display panel 6511, optical member 6512, The touch sensor panel 6513, printed circuit board 6517, battery 6518, etc. are located here. ru.

[0534] The protective member 6510 includes a display panel 6511, an optical member 6512, and a touch sensor panel. Nel 6513 is fixed by an adhesive layer (not shown).

[0535] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back. The FPC6515 is connected to the folded portion. IC6516 is mounted. FPC6515 is located on printed circuit board 6517. It is connected to the terminal.

[0536] A flexible display according to one aspect of the present invention can be applied to the display panel 6511. Yes, it is possible. Therefore, it is possible to realize extremely lightweight electronic devices. Also, the display panel 6511 is extremely Because it is extremely thin, it can accommodate a large-capacity 6518 battery while keeping the thickness of electronic devices down. Yes, it is possible. Also, by folding back a part of the display panel 6511, the FPC6515 can be placed on the back of the pixel area. By positioning the connection point, it is possible to realize electronic devices with narrow bezels.

[0537] By using the display device shown in Embodiment 2 on the display panel 6511, the display unit 650 Image acquisition can be performed in step 2. For example, a fingerprint can be captured on the display panel 6511, and fingerprint authentication can be performed. It is possible to do so.

[0538] The display unit 6502 further includes a touch sensor panel 6513, so the display unit 65 A touch panel function can be added to 02. As a touch sensor panel 6513 These include capacitive, resistive, surface acoustic wave, infrared, optical, and pressure-sensitive methods. Various methods can be used. Alternatively, the display panel 6511 can be used as a touch sensor. It may be made functional, in which case the touch sensor panel 6513 does not need to be provided.

[0539] Figure 22A shows an example of a television system. The television system 7100 has a housing 710 A display unit 7000 is incorporated into 1. Here, the stand 7103 connects to the housing 710. This shows the configuration that supports option 1.

[0540] The display device shown in Embodiment 2 can be applied to the display unit 7000.

[0541] The television device 7100 shown in Figure 22A is operated by the operation switches provided on the housing 7101. This can be done by the 70 or a separate remote control unit 7111. Alternatively, the display unit 70 00 may be equipped with a touch sensor, and by touching the display unit 7000 with a finger, etc., the TV will The control device 7100 may be operated. The remote control operator 7111 is the remote control operator 7 It may have a display unit that displays information output from 111. Remote control operator 7111 The control keys or touch panel on the device allow you to operate the channel and volume. Furthermore, the image displayed on the display unit 7000 can be operated.

[0542] The television system 7100 will consist of a receiver and a modem, etc. The device can receive regular television broadcasts. It can also receive broadcasts via a modem via wired or By connecting to a wireless communication network, one-way communication (from sender to receiver) or It is also possible to communicate information in two directions (between a sender and receiver, or between receivers). be.

[0543] Figure 22B shows an example of a notebook personal computer. The Pewter 7200 consists of a casing 7211, a keyboard 7212, and a pointing device 72 13. It has external connection ports 7214, etc. The display unit 7000 is incorporated into the housing 7211. It is being done.

[0544] The display device shown in Embodiment 2 can be applied to the display unit 7000.

[0545] Figures 22C and 22D show examples of digital signage.

[0546] The digital signage 7300 shown in Figure 22C consists of a housing 7301, a display unit 7000, and It has a speaker 7303, etc. Furthermore, it has an LED lamp, operation keys (power switch, or It may include an operating switch, connection terminals, various sensors, a microphone, etc. .

[0547] Figure 22D shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is installed along the curved surface of the column 7401. To possess.

[0548] The larger the display area 7000, the more information can be provided at once. The wider the display area 7000, the more easily it catches people's attention, which can, for example, enhance the effectiveness of advertising. can.

[0549] By applying a touch panel to the display unit 7000, images or videos can be displayed on the display unit 7000. It's desirable that it not only displays information but also allows users to operate it intuitively. Furthermore, route information... When used for purposes such as providing news or traffic information, intuitive operation is required. This can improve usability.

[0550] Also, as shown in Figures 22C and 22D, the Digital Signage 7300 or Digital Signage 7400 is an information terminal 7311 such as a smartphone owned by the user. It is preferable that it can communicate with the information terminal 7411 via wireless communication. For example, the display unit Information about the advertisement displayed on 7000 is shown on the image of information terminal 7311 or information terminal 7411. It can be displayed on the surface. Also, information terminal 7311 or information terminal 7411 can be operated. By doing so, the display on the 7000 display unit can be switched.

[0551] In Figures 22C and 22D, the display unit of the information terminal 7311 or the information terminal 7411. The display device shown in Embodiment 2 can be applied to this.

[0552] Additionally, information terminals can be connected to the Digital Signage 7300 or Digital Signage 7400. A game is played using the screen of the 7311 or information terminal 7411 as the control device (controller). It can also be done. This allows a large number of users to participate in the game simultaneously and enjoy It is possible to do so.

[0553] The electronic equipment shown in Figures 23A to 23F consists of a housing 9000, a display unit 9001, and a speaker 90. 03. Operation key 9005 (including power switch or operation switch), connection terminal 900 6. Sensor 9007 (force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, Magnetism, temperature, chemicals, sound, time, hardness, electric field, electric current, voltage, power, radiation, flow rate, humidity (Including functions for measuring degrees, incline, vibration, odor, or infrared radiation), Microphone 90 It has 08, etc.

[0554] The electronic devices shown in Figures 23A to 23F have various functions. For example, they can display various information (static Functions to display still images, videos, text images, etc. on the display unit, touch panel function, calendar - Functions that display the date or time, etc., processed by various software (programs) Functions to control the system, wireless communication functions, programs or data recorded on the recording medium. It may have functions such as reading and processing data. However, the functions of electronic devices are not limited to these. It is not limited to having multiple displays, and can have various functions. i. Also, an electronic device may be equipped with a camera, etc., to capture still images or videos, etc., and record on a recording medium (external It has functions such as saving to (or built into the camera), displaying captured images on the display unit, etc. It's fine if you do that.

[0555] The details of the electronic equipment shown in Figures 23A to 23F will be explained below.

[0556] Figure 23A is a perspective view showing the personal digital assistant 9101. The personal digital assistant 9101 is, for example, For example, it can be used as a smartphone. Note that the mobile information terminal 9101 is a speed A connector (9003), connection terminal (9006), sensor (9007), etc. may be provided. Also, a portable information terminal may be provided. The 9101 can display text, image information, etc., on its multiple surfaces. In Figure 23A, This shows an example displaying three icons 9050. Also, information 905 is shown by a dashed rectangle. 1 can also be displayed on other sides of the display unit 9001. An example of information 9051 is: Notifications for incoming emails, SNS messages, phone calls, etc., subject lines and sender names for emails, SNS messages, etc. This includes the date and time, battery level, and antenna signal strength. Alternatively, information 9051 is You may also display icons such as icon 9050 in the shown location.

[0557] Figure 23B is a perspective view showing the personal digital assistant 9102. The personal digital assistant 9102 is a table The display unit 9001 has the function of displaying information on three or more sides. Here, information 9052, information This shows an example where information 9053 and information 9054 are displayed on different sides. For example, user This is with the personal digital assistant 9102 stored in the breast pocket of the clothing, and the personal digital assistant 9102 Information 9053, displayed in a position that can be observed from above, can also be viewed by the user. This allows you to check the display without taking the personal digital assistant 9102 out of your pocket, for example, to make a phone call. You can decide whether or not to accept it.

[0558] Figure 23C is a perspective view showing a wristwatch-type personal information terminal 9200. Personal information terminal 92 00 can be used, for example, as a smartwatch. Also, the display unit 9001 is The display surface is curved, allowing the display to follow the curved surface. The personal information terminal 9200 communicates with, for example, a wireless communication headset. It also allows for hands-free calling. Furthermore, the 9200 mobile information terminal has a connection terminal 9 006 enables mutual data transmission with other information terminals, charging, etc. Yes, it can. Furthermore, charging may be performed via wireless power supply.

[0559] Figures 23D to 23F are perspective views showing a foldable portable information terminal 9201. Figure 23D shows the mobile information terminal 9201 in its unfolded state, Figure 23F shows it in its folded state, and Figure 2 Figure 3E is a perspective view showing the state in the process of changing from one of Figures 23D and 23F to the other. The 9201 information terminal offers excellent portability when folded and a seamless, wide design when unfolded. The display area provides excellent readability. The display unit 9001 of the portable information terminal 9201 It is supported by three housings 9000 connected by hinges 9055. For example, The display unit 9001 can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less.

[0560] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination. [Examples]

[0561] In this example, a light-receiving element according to one embodiment of the present invention was fabricated, and the results of evaluating its characteristics are as follows. explain.

[0562] In this embodiment, two light-receiving elements (Sample A1, A2) were fabricated. The two photodetectors fabricated used the same configuration except for the active layer.

[0563] The chemical formulas of the materials used in this example are shown below.

[0564] [ka]

[0565] Table 1 shows the specific configuration of the photodetector fabricated in this embodiment. The configuration of the photodetector is The photodetector 270PD illustrated in Figure 10A can be used. In this embodiment, the common electrode 2 A buffer layer was formed on top of 75.

[0566] [Table 1]

[0567] The pixel electrode 271 (also called the first electrode) is made of silver (Ag), palladium (Pd), and copper (C). A u alloy (Ag-Pd-Cu(APC)) is cut to a thickness of 100 nm using the sputtering method. The film is formed in such a manner, and indium tin oxide (ITSO) containing silicon oxide is sputtered onto it. The film was formed by depositing a film with a thickness of 100 nm according to the specified method.

[0568] Next, the substrate on which the pixel electrodes 271 are formed is washed with water and then fired at 200°C for 1 hour. Then, UV ozone treatment was performed for 370 seconds. After that, 10 -4 The internal pressure was reduced to about Pa. The substrate is introduced into the vacuum deposition apparatus, and in the heating chamber of the vacuum deposition apparatus, a true vapor deposition is carried out at 170°C for 30 minutes. A pre-heating process was performed. Afterwards, the substrate was allowed to cool for about 30 minutes.

[0569] The hole injection layer 281 is N,N-bis(4-biphenyl)-6-phenylbenzo[b]na Phtho[1,2-d]furan-8-amine (abbreviation: BBABnf) and an electronic acceptor material The weight ratio of ingredient (OCHD-001) is BBABnf:OCHD-001 = 1:0.10 It was formed by co-evaporating in such a manner. The hole injection layer 281 has a film thickness of 10 nm. It was formed in that way.

[0570] The hole transport layer 282 is formed by depositing BBABnf to a thickness of 40 nm. I did it.

[0571] In Sample A1, the active layer 273 is fullerene C 70 And, tetraphenyl Benzoperifuranthene (abbreviation: DBP) and C 70 :DBP=9:1 It was formed by co-depositing sea urchin. The active layer 273 was formed to have a film thickness of 60 nm. Ta.

[0572] In Sample A2, the active layer 273 is N,N'-dimethyl-3,4,9,10 -Perylenetetracarboxylic acid diimide (abbreviated as Me-PTCDI) with a film thickness of 54 nm After depositing the material in that manner, Rubrene is deposited to a film thickness of 6 nm. It was formed.

[0573] The electron transport layer 284 is 2-[3'-(dibenzothiophen-4-yl)biphenyl-3 -yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II) is used in the membrane Deposition was carried out to a thickness of 10 nm, followed by 2,9-bis(naphthalene-2-yl)-4, 7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen) is used in a film thickness of 10n It was formed by depositing material so that it would be m.

[0574] The electron injection layer 285 is formed by depositing lithium fluoride (LiF) to a thickness of 1 nm. It was formed by doing so.

[0575] The common electrode 275 (also called the second electrode) is a mixture of silver (Ag) and magnesium (Mg). The film was formed by co-evaporation with a volume ratio of 10:1 and a film thickness of 10 nm.

[0576] Furthermore, a buffer layer is added to the common electrode 275, consisting of 4,4',4''-(benzene-1 ,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II) It was formed by depositing a layer so that its wavelength was 80 nm.

[0577] Based on the above, Sample A1 and Sample A2, which have different active layer compositions, are considered separately. I made it.

[0578] Table 2 shows the HOMO level, LUMO level, and film deposition for the active layer material of each photodetector. The temperature is shown. The deposition temperature is shown below, along with the deposition rate. The active layer used in Sample A2 allowed for a lower film deposition temperature compared to Sample A1, and This combination of materials allows for an increased film deposition rate.

[0579] [Table 2]

[0580] Furthermore, Figures 24A and 24B show the wavelength dependence of the absorption coefficient of the active layer material. Figure 24A Figure 24B shows Sample A1, and Figure 24B shows Sample A2. The horizontal axis represents wavelength (λ [nm]), and the vertical axis represents the normalized absorption coefficient. This indicates (churning).

[0581] As shown in Figure 24A, Sample A1 shows that the acceptor absorption extends to the longer wavelength side. It is spreading. Also, in Sample A1, the acceptor weight is set to 90 wt%. Therefore, Sample A1 is a photodetector that has sensitivity over a wide range of the visible spectrum. .

[0582] On the other hand, as shown in Figure 24B, Sample A2 shows the absorption of acceptor and donor. It is located in the green wavelength range. In particular, the donor has a sharp absorption peak in a narrower wavelength range than the acceptor. It has a characteristic. In Sample A2, the donor accounts for 90% of the entire active layer. Sample A2 is a photodetector that has high sensitivity in the green wavelength range.

[0583] Next, the current-voltage characteristics of each photodetector were measured. The measurement was performed by emitting monochromatic light at 525 nm. Illuminance 12.5μW / cm 2When illuminated (labeled "Photo") and in a dark state (labeled "Dark") The tests were performed using the notation ( and respectively). Figures 25A and 25B show the current-voltage characteristics. Figure 25A Figure 25B shows the measurement results for Sample A1, and Figure 25B shows the measurement results for Sample A2. In this graph, the horizontal axis is voltage (V[V]) and the vertical axis is current density (J[mA / cm²]). 2 Show ]) Yes, they are.

[0584] As shown in Figures 25A and 25B, Sample A1 and Sample A2 It was confirmed that these also exhibited good saturation characteristics.

[0585] Furthermore, Figure 26A shows the external quantum efficiency (EQE). This shows the wavelength dependence of irradiance. EQE was calculated with a voltage of -4V and an irradiance of 1 2.5 μW / cm² 2 Measurements were taken by changing the wavelength. In Figure 26A, the horizontal axis is wavelength (λ). The vertical axis shows the EQE ([%]) relative to the [nm] value.

[0586] As shown in Figure 26A, all photodetectors have the highest sensitivity peak around 525 nm. This was confirmed. Furthermore, Sample A1, compared to Sample A2, had a particular advantage. It was confirmed that it has a wide sensitivity on the longer wavelength side. On the other hand, Sample A2 is green wavelength It was confirmed that the device exhibits selective sensitivity in a specific region.

[0587] Next, the reliability of each photodetector was evaluated. The reliability evaluation was performed using a white LED, with 50 The photodetector was irradiated with 100klux light at 00K, with a voltage of -4V and a temperature of 25°C. The current density was measured when the device was held in place. Figure 26B shows the measurement results for each photodetector. In Figure 26B, the horizontal axis is time (Time[h]) and the vertical axis is the normalized current density (J). (normalized) is shown. As shown in Figure 26B, all photodetectors are high Its reliability has been confirmed. [Explanation of Symbols]

[0588] 10, 10a, 10b: Display device: 11, 12: Substrate: 13, 14: Resin layer: 15: Function Layers: 16: Resin layer: 17: Protective layer: 20: Light-receiving element: 21: Conductive layer: 22: Photoelectric conversion layer: 23: Conductive layer; 25: Light-shielding layer; 30, 30R, 30G, 30B: Light-emitting element; 31: Conductive layer :32:EL layer:40, 40a:Pixel:41:Insulating layer:42:Protective layer:43:Conductive layer:5 0: Finger: 51, 52: Light: 55: Resin layer: 56a, 56b, 57: Conductive layer: 58: Insulating layer 500, 500a~500d: Display panel: 501, 501a~501d: Display area: 510, 510b~510d: Area: 512a~512d: FPC: 520, 520b, 520c: Area: 550: Stacked panel, 551: Display area, 5001: Display unit: 5002 Dashboard: 5003: Steering Wheel: 5004: Windshield: 5005: Camera :5006:Air outlet:5007, 5007a~5007d:Display panel:5008a, 5 008b: Door: 5009a, 5009b: Display Unit

Claims

[Claim 1] It comprises a light-receiving element, a light-emitting element, a first substrate, a second substrate, a first resin layer, a second resin layer, and a light-shielding layer. The first resin layer, the second resin layer, and the second substrate are laminated on the first substrate in this order. The light-receiving element and the light-emitting element are each located between the first substrate and the first resin layer. The light-shielding layer is located between the first resin layer and the second resin layer and has a first opening that overlaps with the light-receiving element. The light-shielding layer has a region in which, in a plan view, the first opening is located inside the light-receiving region of the light-receiving element, and in a cross-sectional view, the width of the first opening is less than or equal to the width of the light-receiving region. The second substrate is thicker than the first resin layer and the second resin layer. The first resin layer has a region in which the thickness of the portion overlapping with the light-receiving region of the light-receiving element is 1 to 10 times the width of the light-receiving region. A display device wherein the second substrate has a refractive index with respect to the wavelength of light emitted by the light-emitting element that is higher than that of the first resin layer and the second resin layer.

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