Semiconductor lasers and 2-channel laser arrays
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- NIPPON TELEGRAPH & TELEPHONE CORP
- Filing Date
- 2026-03-09
- Publication Date
- 2026-06-23
AI Technical Summary
【0013】 本発明によれば、PPR効果が最適化されたメンブレンDR-DML構造を実現することができ、動作温度が25℃~75℃である場合において、変調帯域幅を最大化することができる。さらに、本発明のメンブレンDR-DML構造を用いることで、Oバンド通信ウインドウにおいて200(2×112) GbpsのNRZ(Non Return to Zero)信号および400 (2×200) GbpsPAM-4(Pulse Amplitude Modulation-4)信号を低消費電力でサポートする2チャンネルレーザアレイを実現することができる。
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Figure 2026102716000001_ABST
Abstract
Claims
1. A distributed feedback region having a uniform first diffraction grating and an active layer, A first distributed Bragg reflector region having a uniform second diffraction grating and core layer, and optically coupled to one end of the distributed feedback region in the waveguide direction, A second distributed Bragg reflector region having a uniform third diffraction grating and core layer, and optically coupled to the other end of the distributed feedback region in the waveguide direction, A semiconductor laser comprising, The lengths in the waveguide direction of the distributed feedback region, the first distributed Bragg mirror region, and the second distributed Bragg mirror region are set such that the photon-photon resonance frequency of the semiconductor laser is 40 GHz to 50 GHz when the operating temperature is 25°C to 75°C. The coupling coefficients of the first distributed Bragg mirror region and the second distributed Bragg mirror region are 400 cm² each. －１ Set to the above, The coupling coefficient of the aforementioned distributed feedback region is 400 cm －１ The above settings Semiconductor laser.
2. The frequency separation between the relaxation oscillation frequency of the semiconductor laser and the photon-photon resonance frequency is 30 to 35 GHz. The semiconductor laser according to claim 1.
3. The lengths in the waveguide direction of the distributed feedback region, the first distributed Bragg mirror region, and the second distributed Bragg mirror region are set such that the photon-photon resonance frequency is 50 GHz when the operating temperature is 25°C. The semiconductor laser according to claim 1.
4. The waveguide lengths of the distributed feedback region, the first distributed Bragg reflector region, and the second distributed Bragg reflector region are 80 μm, 80 μm, and 200 μm, respectively. The semiconductor laser according to claim 1.
5. The 3dB modulation bandwidth of the semiconductor laser is 40GHz to 60GHz. The semiconductor laser according to claim 1.
6. When the operating temperature is 25°C, the 3dB modulation bandwidth of the semiconductor laser is 60GHz. The semiconductor laser according to claim 5.
7. The invention comprises two semiconductor lasers according to claim 1, arranged at a predetermined laser pitch, wherein each of the two semiconductor lasers is configured to transmit a 112 Gbps NRZ signal or a 200 Gbps PAM-4 signal in the O-band communication window. Two-channel laser array.
8. When the operating temperature is 25°C, the operating power of the two-channel laser array is less than 0.3 pJ / bit. The two-channel laser array according to claim 7.