Semiconductor equipment

JP2026102763APending Publication Date: 2026-06-23SEMICON ENERGY LAB CO LTD
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
SEMICON ENERGY LAB CO LTD
Filing Date
2026-03-16
Publication Date
2026-06-23

AI Technical Summary

Benefits of technology

【0027】 高い電界効果移動度を有するトランジスタを提供することができる。または、電気特性の 安定したトランジスタを提供することができる。または、オフ電流の小さいトランジスタ を提供することができる。または、消費電力が少ないトランジスタを提供することができ る。または、信頼性の良好なトランジスタを提供することができる。

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Abstract

To provide a semiconductor device with a small occupation area. Or, to provide a semiconductor device with a high degree of integration. Or, to provide a semiconductor device with good reliability. Or, to provide a novel semiconductor device. Or, to provide a novel semiconductor device. To provide. 【Solution means】Electrically connect one of the gate electrode of the first transistor and the source electrode or the drain electrode of the second transistor. For the first transistor and the second transistor, semiconductor layers having different bandgaps are used. The second transistor has a first oxide semiconductor layer in contact with the source electrode and the drain electrode, a second oxide semiconductor layer in contact with the first oxide semiconductor layer, and a third oxide semiconductor layer in contact with the second oxide semiconductor layer. Further, the second oxide semiconductor layer is covered with the third oxide semiconductor layer. A gate electrode is provided on the third oxide semiconductor layer via an insulating layer. Electrically connect one of the gate electrode of the first transistor and the source electrode or the drain electrode of the second transistor. For the first transistor and the second transistor, semiconductor layers having different bandgaps are used. The second transistor has a first oxide semiconductor layer in contact with the source electrode and the drain electrode, a second oxide semiconductor layer in contact with the first oxide semiconductor layer, and a third oxide semiconductor layer in contact with the second oxide semiconductor layer. Further, the second oxide semiconductor layer is covered with the third oxide semiconductor layer. A gate electrode is provided on the third oxide semiconductor layer via an insulating layer. The second transistor has a first oxide semiconductor layer in contact with the source electrode and the drain electrode, a second oxide semiconductor layer in contact with the first oxide semiconductor layer, and a third oxide semiconductor layer in contact with the second oxide semiconductor layer. Further, the second oxide semiconductor layer is covered with the third oxide semiconductor layer. A gate electrode is provided on the third oxide semiconductor layer via an insulating layer.
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Claims

[Claim 1] It has a first transistor and a second transistor, The first transistor described above has a first electrode, The second transistor has a second electrode and a third electrode, The first electrode and the third electrode are electrically connected. The second transistor comprises a first semiconductor in contact with the third electrode, a second semiconductor in contact with the first semiconductor, and a third semiconductor covering the second semiconductor. A semiconductor device in which the second electrode is superimposed on the first semiconductor, the second semiconductor, and the third semiconductor via an insulating layer.