Light-emitting element

Abstract

To provide light-emitting elements that can improve reliability. [Solution] The light-emitting element comprises an insulating substrate, a first conductive member disposed on the insulating substrate, a second conductive member disposed on the insulating substrate, a first semiconductor part having a first semiconductor layer disposed on the first conductive member and electrically connected to the first conductive member, a first active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the first active layer, a second semiconductor part having a third semiconductor layer disposed on the second conductive member and electrically connected to the second conductive member, a second active layer disposed on the third semiconductor layer, and a fourth semiconductor layer disposed on the second active layer, a first electrode electrically connected to the second semiconductor layer and the second conductive member, and a second electrode electrically connected to the fourth semiconductor layer and the first conductive member.

Description

[Technical Field]

[0001] This disclosure relates to a light-emitting element. [Background technology]

[0002] For example, Patent Document 1 discloses a semiconductor light-emitting device in which a semiconductor layer that serves as a light-emitting part and a semiconductor layer that serves as a diode that functions as a protection circuit are provided on a single chip. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2016-181561 [Overview of the project] [Problems that the invention aims to solve]

[0004] This disclosure aims to provide a light-emitting element that can improve reliability. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, a light-emitting element comprises an insulating substrate, a first conductive member disposed on the insulating substrate, a second conductive member disposed on the insulating substrate and separated from the first conductive member in a top view, a first semiconductor portion having a first semiconductor layer disposed on the first conductive member, electrically connected to the first conductive member and having a first conductivity type, a first active layer disposed on the first semiconductor layer, and a second semiconductor layer having a second conductivity type disposed on the first active layer, a second semiconductor portion separated from the first semiconductor portion in a top view, having a third semiconductor layer disposed on the second conductive member and electrically connected to the second conductive member and having a first conductivity type, a second active layer disposed on the third semiconductor layer, and a fourth semiconductor layer having a second conductivity type disposed on the second active layer, a first electrode electrically connected to the second semiconductor layer and the second conductive member, and a second electrode electrically connected to the fourth semiconductor layer and the first conductive member. [Effects of the Invention]

[0006] According to this disclosure, it is possible to provide a light-emitting element that can improve reliability. [Brief explanation of the drawing]

[0007] [Figure 1] This is a schematic top view of a light-emitting element according to the first embodiment. [Figure 2] This is an enlarged top view of a portion of Figure 1. [Figure 3] This is a schematic cross-sectional view along line III-III in Figure 1. [Figure 4] This is an enlarged top view of a portion of the light-emitting element according to the second embodiment. [Figure 5] This is a schematic cross-sectional view of the light-emitting element according to the second embodiment. [Figure 6] This is an enlarged top view of a portion of the light-emitting element according to the third embodiment. [Figure 7] This is a schematic cross-sectional view of a light-emitting element according to the third embodiment. [Figure 8] This is a schematic top view of a light-emitting element according to the fourth embodiment. [Modes for carrying out the invention]

[0008] The light-emitting element of the embodiment will be described below with reference to the drawings. Unless otherwise specified, the dimensions, materials, shapes, relative arrangements, etc. of the components described in the embodiment are not intended to be the sole limiting factors, but are merely illustrative examples. The size and positional relationships of the components shown in each drawing may be exaggerated for clarity of explanation. In addition, in the following description, the same name and reference numeral indicate the same or identical component, and detailed explanations will be omitted as appropriate. In addition, in some cases, end views showing only the cut surface will be shown as cross-sectional views.

[0009] In the following description, terms indicating specific directions or positions (e.g., "up," "down," and other terms including these) may be used. However, these terms are used merely for clarity to indicate the relative directions or positions in the referenced drawings. If the relative direction or position relationship indicated by terms such as "up" and "down" in the referenced drawings is the same, the arrangement in drawings other than those disclosed, actual products, etc., does not have to be the same as in the referenced drawings. In this specification, the positional relationship expressed as "up (or down)" includes, for example, the case where two members are in contact with each other, and the case where the two members are not in contact but one member is located above (or below) the other member. Furthermore, unless otherwise specified, "a member covers an object" includes the case where the member is in contact with the object and directly covers it, and the case where the member does not contact the object and indirectly covers it.

[0010] In the diagrams shown below, directions may be indicated by the X, Y, and Z axes. The X, Y, and Z axes are orthogonal to each other. For example, in this specification, the direction along the X axis is referred to as the first direction X, the direction along the Y axis as the second direction Y, and the direction along the Z axis as the third direction Z. The direction of the arrow on the Z axis is the main light extraction direction of the light-emitting element. In this specification, a top view means observing the top surface (light-emitting surface) of the light-emitting element from the direction of the arrow on the Z axis.

[0011] [First Embodiment] Referring to FIGS. 1 to 3, the light-emitting element 1 according to the first embodiment will be described. FIG. 1 is a schematic top view of the light-emitting element 1 according to the first embodiment. FIG. 2 is an enlarged top view of a part in FIG. 1. FIG. 3 is a schematic cross-sectional view taken along line III-III of FIG. 1.

[0012] The light-emitting element 1 according to the first embodiment includes an insulating substrate 30, a first conductive member 40, a second conductive member 50, a first semiconductor part 10, a second semiconductor part 20, a first electrode 70, and a second electrode 80.

[0013] <Insulating Substrate><000​​​​​​​​​​As described later, by arranging the second conductive layer 42 between the first semiconductor part 10 and the first conductive layer 41, the diffusion of metal contained in the first conductive layer 41 into the first semiconductor part 10 and the reaction with the first semiconductor part 10 can be reduced. However, since the second conductive layer 42 requires the use of a material with relatively high electrical resistivity, the electrical resistivity of the first conductive member 40 may increase. For this reason, it is preferable to use a material with lower electrical resistivity than the material of the second conductive layer 42 as the material of the first conductive layer 41. By using a material with lower electrical resistivity than the material of the second conductive layer 42 as the material of the first conductive layer 41, the diffusion of metal contained in the first conductive layer 41 into the first semiconductor part 10 and the reaction with the first semiconductor part 10 by the second conductive layer 42 can be reduced, while the forward voltage of the light-emitting element 1 can be reduced. For example, metals such as gold and platinum can be used as the material of the first conductive layer 41.

[0016] The second conductive layer 42 is in contact with the first semiconductor portion 10. By arranging the second conductive layer 42 between the first semiconductor portion 10 and the first conductive layer 41, the diffusion of metal contained in the first conductive layer 41 into the first semiconductor portion 10 and the reaction with the first semiconductor portion 10 can be reduced. The portion in which the metal contained in the first conductive layer 41 has diffused into the first semiconductor portion 10 and reacted with the first semiconductor portion 10 may become a portion that easily absorbs light emitted from the first active layer 12. As the material of the second conductive layer 42, for example, ITO (Indium Tin Oxide) and ZnO (Zinc Oxide) can be used.

[0017] <Second conductive member> As shown in Figure 3, the second conductive member 50 is arranged on the insulating substrate 30. As shown in Figures 1 and 2, the second conductive member 50 is separated from the first conductive member 40 in a top view. In a top view, the area of ​​the first conductive member 40 is larger than the area of ​​the second conductive member 50.

[0018] The second conductive member 50 may have, for example, a third conductive layer 51 and a fourth conductive layer 52. The third conductive layer 51 is disposed on the insulating substrate 30. The fourth conductive layer 52 is disposed on the third conductive layer 51 and is electrically connected to the third conductive layer 51. In a top view, the area of ​​the third conductive layer 51 is larger than the area of ​​the fourth conductive layer 52.

[0019] For example, the same metal as that used for the first conductive layer 41 can be used as the material for the third conductive layer 51. The fourth conductive layer 52 is in contact with the second semiconductor portion 20. By arranging the fourth conductive layer 52 between the second semiconductor portion 20 and the third conductive layer 51, diffusion of the metal contained in the third conductive layer 51 into the second semiconductor portion 20 and reaction with the second semiconductor portion 20 can be reduced. For example, the same material as that used for the second conductive layer 42 can be used as the material for the fourth conductive layer 52.

[0020] <First Semiconductor Division> As shown in Figure 3, the first semiconductor portion 10 is arranged on the first conductive member 40. The first semiconductor portion 10 includes a first semiconductor layer 11 having a first conductivity type and arranged on the first conductive member 40, a first active layer 12 arranged on the first semiconductor layer 11, and a second semiconductor layer 13 having a second conductivity type and arranged on the first active layer 12. In this embodiment, the first conductivity type is p-type and the second conductivity type is n-type.

[0021] The first active layer 12 is located between the first semiconductor layer 11 and the second semiconductor layer 13 in the third direction Z. The first active layer 12 is a light-emitting layer and can have, for example, an MQW (Multiple Quantum Well) structure including a plurality of barrier layers and a plurality of well layers. The first active layer 12 emits light with an emission peak wavelength of 590 nm to 780 nm. The first active layer 12 is made of, for example, Al x Ga y In 1-x-y P(x≧0, y≧0, x+y≦1) is included.

[0022] The first semiconductor layer 11 is electrically connected to the first conductive member 40. The first semiconductor layer 11 contains p-type impurities. The first semiconductor layer 11 includes, for example, at least one of a GaP layer, an AlInP layer, and an AlGaInP layer.

[0023] The second semiconductor layer 13 is electrically connected to the first electrode 70. The second semiconductor layer 13 may include, for example, a first layer 13A and a second layer 13B. The first layer 13A is located on the first active layer 12. The second layer 13B is located on a portion of the surface of the first layer 13A that is opposite to the first active layer 12 in the third direction Z.

[0024] The band gap energy of the second layer 13B is smaller than that of the first layer 13A. In other words, the absorption rate of the second layer 13B with respect to light emitted by the first active layer 12 is higher than that of the first layer 13A with respect to light emitted by the first active layer 12. The upper surface of the first semiconductor portion 10 includes the upper surface of the second layer 13B and the upper surface of the portion of the first layer 13A where the second layer 13B is not placed. On the upper surface of the first semiconductor portion 10, the area of ​​the upper surface of the first layer 13A is larger than the area of ​​the upper surface of the second layer 13B. This reduces light absorption in the second layer 13B. For example, the area of ​​the upper surface of the second layer 13B is 5% to 40% of the area of ​​the upper surface of the first layer 13A, preferably 10% to 30%.

[0025] The side surface of the first semiconductor portion 10 includes the side surface of the first semiconductor layer 11, the side surface of the first active layer 12, and the side surface of the second semiconductor layer 13.

[0026] The thickness of the first layer 13A is greater than the thickness of the second layer 13B. The thickness of the first layer 13A is, for example, 1 μm or more and 5 μm or less. The thickness of the second layer 13B is, for example, 0.05 μm or more and 0.5 μm or less. The first layer 13A has the function of diffusing the current in the planar direction of the second semiconductor layer 13. In this specification, the thickness of each layer of the semiconductor part represents the maximum thickness in the third direction Z. The second layer 13B functions as a contact layer that reduces the resistance of the electrical connection between the first electrode 70 and the second semiconductor layer 13.

[0027] The first layer 13A is, for example, Al x Ga y In 1-x-y The first layer 13A contains a layer of P(x≧0, y≧0, x+y≦1). The second layer 13B contains, for example, a layer of GaAs. The first layer 13A and the second layer 13B contain n-type impurities. The concentration of n-type impurities in the first layer 13A is higher than the concentration of n-type impurities in the second layer 13B.

[0028] As shown in Figure 1, in a top view, the first semiconductor portion 10 has a first outer edge 10A extending in the second direction Y, a second outer edge 10B located away from the first outer edge 10A in the first direction X and extending in the second direction Y, a third outer edge 10C extending in the first direction X, and a fourth outer edge 10D located away from the third outer edge 10C in the second direction Y and extending in the first direction X. The first semiconductor portion 10 further has a fifth outer edge 10E that is continuous with the fourth outer edge 10D and extends from the fourth outer edge 10D in the second direction Y. The fifth outer edge 10E is located closer to the third outer edge 10C than to the fourth outer edge 10D. In a top view, the fifth outer edge 10E has a curved portion located, for example, closer to the third outer edge 10C than to the fourth outer edge 10D.

[0029] <Second Semiconductor Section> As shown in Figure 3, the second semiconductor portion 20 is arranged on the second conductive member 50. As shown in Figures 1 and 2, in a top view, the second semiconductor portion 20 is separated from the first semiconductor portion 10. In a top view, the second semiconductor portion 20 is positioned opposite the fifth outer edge 10E of the first semiconductor portion 10. In a top view, the area of ​​the second semiconductor portion 20 is smaller than the area of ​​the first semiconductor portion 10. As will be described later, the second semiconductor portion 20 functions as a protective element. If the area of ​​the second semiconductor portion 20 in a top view is too small, the current density in the second semiconductor portion 20 may become too high when current flows through it, potentially causing the second semiconductor portion 20 to be destroyed. Therefore, in a top view, the area of ​​the second semiconductor portion 20 is preferably, for example, 5% to 50% of the area of ​​the first semiconductor portion 10, more preferably 10% to 30% of the area of ​​the first semiconductor portion 10.

[0030] The first semiconductor section 10 and the second semiconductor section 20 can be obtained, for example, by separating a single semiconductor structure into the first semiconductor section 10 and the second semiconductor section 20. The semiconductor structure includes a first conductivity type semiconductor layer which becomes the first semiconductor layer 11 and the third semiconductor layer 21, active layers which become the first active layer 12 and the second active layer 22, and a second conductivity type semiconductor layer which becomes the second semiconductor layer 13 and the fourth semiconductor layer 23.

[0031] As shown in Figure 3, the second semiconductor portion 20 includes a p-type third semiconductor layer 21 disposed on the second conductive member 50, a second active layer 22 disposed on the third semiconductor layer 21, and an n-type fourth semiconductor layer 23 disposed on the second active layer 22.

[0032] The second active layer 22 is located between the third semiconductor layer 21 and the fourth semiconductor layer 23 in the third direction Z. The second active layer 22 is configured, for example, in the same way as the first active layer 12.

[0033] The third semiconductor layer 21 is electrically connected to the second conductive member 50. The third semiconductor layer 21 is configured, for example, in the same way as the first semiconductor layer 11.

[0034] The fourth semiconductor layer 23 is electrically connected to the second electrode 80. The fourth semiconductor layer 23 may include, for example, a third layer 23A and a fourth layer 23B. The third layer 23A is located on the second active layer 22. The fourth layer 23B is located on a portion of the surface of the third layer 23A that is opposite to the second active layer 22 in the third direction Z.

[0035] The upper surface of the second semiconductor section 20 includes the upper surface of the fourth layer 23B and the upper surface of the portion of the third layer 23A where the fourth layer 23B is not placed. On the upper surface of the second semiconductor section 20, the area of ​​the upper surface of the third layer 23A is smaller than the area of ​​the upper surface of the fourth layer 23B.

[0036] The sides of the second semiconductor portion 20 include the sides of the third semiconductor layer 21, the sides of the second active layer 22, and the sides of the fourth semiconductor layer 23.

[0037] The thickness of the third layer 23A is greater than the thickness of the fourth layer 23B. The thickness of the third layer 23A is, for example, 1 μm or more and 5 μm or less. The thickness of the fourth layer 23B is, for example, 0.05 μm or more and 0.5 μm or less. The third layer 23A has a function of diffusing current in the plane direction of the fourth semiconductor layer 23. The fourth layer 23B functions as a contact layer that reduces the resistance of the electrical connection between the second electrode 80 and the fourth semiconductor layer 23.

[0038] The third layer 23A includes, for example, a layer of the same material as the first layer 13A of the first semiconductor portion 10. The fourth layer 23B includes, for example, a layer of the same material as the second layer 13B of the first semiconductor portion 10.

[0039] <The first electrode> The first electrode 70 is electrically connected to the second semiconductor layer 13 of the first semiconductor portion 10 and the second conductive member 50. As the material of the first electrode 70, for example, Au, Ge, Ni, Ti, Pt, etc. can be used.

[0040] The first electrode 70 is disposed on the upper surface of the second layer 13B of the second semiconductor layer 13 and is in contact with the upper surface of the second layer 13B. In the present embodiment, for example, the first layer 13A of the second semiconductor layer 13 is an Al x Ga y In 1-x-y P layer, and the second layer 13B includes a GaAs layer. Generally, the contact resistance between a GaAs-based material and a metal is lower than the contact resistance between an AlGaInP-based material and a metal. Therefore, by the first electrode 70 contacting the second layer 13B, the resistance of the electrical connection between the first electrode 70 and the second semiconductor layer 13 can be reduced compared to the case where the first electrode 70 contacts the first layer 13A.

[0041] Also, the first electrode 70 is in contact with a portion of the upper surface of the second conductive member 50 where the second semiconductor portion 20 is not disposed.

[0042] <The second electrode> The second electrode 80 is electrically connected to the fourth semiconductor layer 23 of the second semiconductor portion 20 and the first conductive member 40. The same material as the first electrode 70 can be used for the second electrode 80.

[0043] The second electrode 80 is positioned on the upper surface of the fourth layer 23B of the fourth semiconductor layer 23 and is in contact with the upper surface of the fourth layer 23B. In this embodiment, for example, the third layer 23A of the fourth semiconductor layer 23 is Al x Ga y In 1-x-y The fourth layer 23B includes a P layer, and the fourth layer 23B includes a GaAs layer. Therefore, by having the second electrode 80 in contact with the fourth layer 23B, the resistance of the electrical connection between the second electrode 80 and the fourth semiconductor layer 23 can be reduced compared to when the second electrode 80 is in contact with the third layer 23A.

[0044] Furthermore, the second electrode 80 is in contact with the portion of the upper surface of the first conductive member 40 where the first semiconductor portion 10 is not located.

[0045] A forward voltage is applied to the first semiconductor section 10 to light up the light-emitting element 1. For example, 0V is applied to the first electrode 70 and a positive potential is applied to the second electrode 80. 0V is applied to the n-type second semiconductor layer 13 from the first electrode 70, and a positive potential is applied to the p-type first semiconductor layer 11 via the first conductive member 40 connected to the second electrode 80. As a result, a forward current flows through the first active layer 12, and the first active layer 12 emits light. At this time, 0V is applied to the p-type third semiconductor layer 21 of the second semiconductor section 20 via the second conductive member 50 connected to the first electrode 70, and a positive potential is applied to the n-type fourth semiconductor layer 23 of the second semiconductor section 20 from the second electrode 80. Therefore, a reverse voltage is applied to the second semiconductor section 20, and the second active layer 22 does not emit light.

[0046] When the light-emitting element 1 is lit, the light emitted by the first active layer 12 is extracted to the outside of the first semiconductor part 10 from the top and side surfaces of the first semiconductor part 10.

[0047] The second semiconductor section 20 functions as a protective element that protects the first semiconductor section 10 from reverse voltage caused by static electricity or the like when the light-emitting element 1 is not lit. When a reverse voltage is applied to the first semiconductor section 10 when the light-emitting element 1 is not lit, current flows from the first electrode 70 to the second electrode 80 through the second conductive member 50 and the second semiconductor section 20. This protects the first semiconductor section 10, which contributes to the lighting operation of the light-emitting element 1, from damage caused by the reverse voltage, thereby improving the reliability of the light-emitting element 1.

[0048] In this embodiment, the light-emitting element 1 further comprises a first insulating film 61, a second insulating film 62, and a third insulating film 63.

[0049] <First insulating film> The first insulating film 61 is disposed on the upper surface of the first semiconductor portion 10, the side surface of the first semiconductor portion 10, the upper surface of the second semiconductor portion 20, and the side surface of the second semiconductor portion 20. The first insulating film 61 covers the first semiconductor portion 10 and the second semiconductor portion 20, protecting them from moisture and the like. As the first insulating film 61, for example, a silicon oxide film or a silicon nitride film can be used.

[0050] The first insulating film 61 covers the side surfaces of the first semiconductor portion 10 and the second semiconductor portion 20. In this embodiment, the first insulating film 61 covers all of the side surfaces of the first semiconductor portion 10 and all of the side surfaces of the second semiconductor portion 20. The first insulating film 61 has a first opening 61A located on the upper surface of the first semiconductor portion 10 and a second opening 61B located on the upper surface of the second semiconductor portion 20.

[0051] The first electrode 70 is placed on the first insulating film 61 and is connected to the second layer 13B of the second semiconductor layer 13 at the first opening 61A. The second electrode 80 is placed on the first insulating film 61 and is connected to the fourth layer 23B of the fourth semiconductor layer 23 at the second opening 61B.

[0052] The first insulating film 61 covers the portion of the upper surface of the first conductive member 40 where the first semiconductor portion 10 is not disposed. The first insulating film 61 covers the side surface of the first conductive member 40. The side surface of the first conductive member 40 includes the side surface of the first conductive layer 41 and the side surface of the second conductive layer 42. The first insulating film 61 covers the portion of the upper surface of the second conductive member 50 where the second semiconductor portion 20 is not disposed. The first insulating film 61 covers the side surface of the second conductive member 50. The side surface of the second conductive member 50 includes the side surface of the third conductive layer 51 and the side surface of the fourth conductive layer 52.

[0053] The first insulating film 61 is positioned between the first conductive member 40 and the second conductive member 50, and covers the upper surface of the insulating substrate 30 that is exposed between the first conductive member 40 and the second conductive member 50.

[0054] The first insulating film 61 continuously covers the first semiconductor portion 10, the second semiconductor portion 20, the first conductive member 40, the second conductive member 50, and the upper surface of the insulating substrate 30 between the first conductive member 40 and the second conductive member 50.

[0055] The first insulating film 61 has a fourth opening 61C located on the upper surface of the third conductive layer 51 of the second conductive member 50, and a fifth opening 61D located on the upper surface of the first conductive layer 41 of the first conductive member 40.

[0056] The first electrode 70 is connected to the upper surface of the third conductive layer 51 of the second conductive member 50 at the fourth opening 61C. The second electrode 80 is connected to the upper surface of the first conductive layer 41 of the first conductive member 40 at the fifth opening 61D.

[0057] <Second insulating film> The second insulating film 62 is disposed between the second conductive layer 42 of the first conductive member 40 and the first semiconductor layer 11 of the first semiconductor portion 10. The second insulating film 62 has a plurality of third openings 62A. The first conductive member 40 is connected to the first semiconductor layer 11 at the plurality of third openings 62A. For example, a silicon oxide film or a silicon nitride film can be used as the second insulating film 62.

[0058] <Third insulating film> The third insulating film 63 is positioned between the fourth conductive layer 52 of the second conductive member 50 and the third semiconductor layer 21 of the second semiconductor portion 20. In a top view, the third insulating film 63 is separated from the second insulating film 62. The third insulating film 63 has a sixth opening 63A. The second conductive member 50 is connected to the third semiconductor layer 21 at the sixth opening 63A. For example, the third insulating film 63 can be made of the same material as the second insulating film 62.

[0059] In this embodiment, the first electrode 70 has a first pad portion 71 that connects to the second semiconductor layer 13 of the first semiconductor portion 10. The first pad portion 71 is in contact with the second layer 13B of the second semiconductor layer 13 at the first opening 61A of the first insulating film 61.

[0060] The second electrode 80 has a second pad portion 81 that connects to the fourth semiconductor layer 23 of the second semiconductor portion 20. The second pad portion 81 is in contact with the fourth layer 23B of the fourth semiconductor layer 23 at the second opening 61B of the first insulating film 61.

[0061] As shown in Figure 1, in a top view, the first pad portion 71 and the second pad portion 81 are located apart in the second direction Y. The first pad portion 71 is electrically connected to the ground wiring, for example, via a wire. The second pad portion 81 is electrically connected to the power wiring, for example, via a wire.

[0062] The first electrode 70 further includes a first extension portion 72 extending from the first pad portion 71, and a second extension portion 73 connecting the first extension portion 72 and the second conductive member 50. The width of the first extension portion 72 and the width of the second extension portion 73 in a top view are smaller than the width of the first pad portion 71 in a top view. The first pad portion 71, the first extension portion 72, and the second extension portion 73 are integrally arranged from the same material.

[0063] Below the first stretched portion 72, the first opening 61A of the first insulating film 61 and the second layer 13B of the second semiconductor layer 13 are stretched along the first stretched portion 72. The first stretched portion 72 is in contact with the second layer 13B at the first opening 61A and is electrically connected to the second semiconductor layer 13. The first stretched portion 72 allows current to be diffused in the planar direction of the second semiconductor layer 13.

[0064] The second extended portion 73 is positioned on the first insulating film 61 covering the first semiconductor portion 10 and is not in contact with the first semiconductor portion 10. The second layer 13B is not located below the second extended portion 73. The second extended portion 73 extends from the first extended portion 72 toward the second conductive member 50, along the first insulating film 61 positioned on the upper and side surfaces of the first semiconductor portion 10. The end of the second extended portion 73 furthest from the first extended portion 72 is in contact with the upper surface of the third conductive layer 51 of the second conductive member 50 at the fourth opening 61C of the first insulating film 61.

[0065] In this embodiment, the first electrode 70 has a plurality of first extensions 72. The plurality of first extensions 72 include first extensions 72A that are connected to the second conductive member 50 by a second extension 73, and first extensions 72B that are not connected to the second conductive member 50.

[0066] In the example shown in Figure 1, the first electrode 70 has one first extension portion 72A connected to the second conductive member 50 by a second extension portion 73, and two first extension portions 72B not connected to the second conductive member 50. The first extension portion 72A connected to the second conductive member 50 extends in the second direction Y between the first pad portion 71 and the second extension portion 73 in a top view. The first extension portions 72B not connected to the second conductive member 50 have, in a top view, a portion extending from the first pad portion 71 in the first direction X, and a portion extending from the portion extending in the first direction X in the second direction Y. In a top view, the first extension portion 72A connected to the second conductive member 50 is located between the portions of the two first extension portions 72B that extend in the second direction Y.

[0067] By connecting the second extension portion 73, which connects to the second conductive member 50, to the first extension portion 72A, the current can be diffused by the first extension portion 72A while the first electrode 70 and the second conductive member 50 are electrically connected by the second extension portion 73. Therefore, compared to the case where the extension portion extending from the first pad portion 71 is separately placed on the first insulating film 61 and connected to the second conductive member 50, the area of ​​the portion in the extension portion that contributes to current diffusion to the second semiconductor layer 13 in a top view can be increased, while the area of ​​the portion that does not contribute to current diffusion to the second semiconductor layer 13 and covers the top surface of the first semiconductor portion 10, thereby absorbing light, can be reduced in a top view.

[0068] As described above, the second extended portion 73 that does not come into contact with the second semiconductor layer 13 does not contribute to current diffusion in the second semiconductor layer 13. The second extended portion 73 plays the role of connecting the first electrode 70 to the second conductive member 50. Therefore, it is preferable that the number of first extended portions 72A connected to the second conductive member 50 by the second extended portion 73 is less than the number of first extended portions 72B not connected to the second conductive member 50. This makes it possible to increase the current diffusion effect by the first extended portion 72 while reducing light absorption in the second extended portion 73.

[0069] The first electrode 70 contains a metal and can absorb light emitted by the first active layer 12. In the first semiconductor portion 10, the region above the connection with the first conductive member 40 tends to have a relatively higher current density and therefore a greater amount of light emission. For this reason, if the first electrode 70 is located above the connection with the first conductive member 40 in the first semiconductor portion 10, light absorption by the first electrode 70 tends to increase. Therefore, in a top view, it is preferable that the second extended portion 73 does not overlap with the third opening 62A of the second insulating film 62. In other words, in a top view, it is preferable that the second extended portion 73 does not overlap with the portion where the first conductive member 40 connects to the first semiconductor layer 11. This reduces light absorption by the second extended portion 73.

[0070] Similarly, in a top view, it is preferable that the first pad portion 71, the first extended portion 72, and the second layer 13B do not overlap the third opening 62A of the second insulating film 62 (the portion where the first conductive member 40 connects to the first semiconductor layer 11). This reduces light absorption by the first pad portion 71, the first extended portion 72, and the second layer 13B.

[0071] On the upper surface of the first layer 13A of the second semiconductor layer 13, the region where the second layer 13B is not placed is preferably rough. This improves the light extraction efficiency from the upper surface of the first semiconductor portion 10.

[0072] The second electrode 80 further has a third extended portion 82 extending from the second pad portion 81. The second pad portion 81 and the third extended portion 82 are integrally arranged from the same material. The third extended portion 82 is arranged on the first insulating film 61 covering the second semiconductor portion 20 and is not in contact with the second semiconductor portion 20. In a top view, the third extended portion 82 extends from the second pad portion 81 toward the first conductive member 40. The end of the third extended portion 82 furthest from the second pad portion 81 is in contact with the upper surface of the first conductive layer 41 of the first conductive member 40 at the fifth opening 61D of the first insulating film 61.

[0073] The following describes other embodiments, mainly focusing on their configurations that differ from the first embodiment, with reference to Figures 4 to 8.

[0074] [Second Embodiment] Figure 4 is an enlarged top view of a portion of the light-emitting element 2 according to the second embodiment. Figure 5 is a schematic cross-sectional view of the light-emitting element 2 according to the second embodiment. Figure 5 shows a cross-section of the same portion as in Figure 3.

[0075] In the light-emitting element 2 according to the second embodiment, the second electrode 80 covers at least a region on the side surface of the second semiconductor portion 20 that faces the side surface of the first semiconductor portion 10, via the first insulating film 61. In the example shown in Figure 5, the second electrode 80 continuously covers the top surface and side surface of the second semiconductor portion 20. As shown in Figure 5, the side surface of the second semiconductor portion 20 faces the side surface of the first semiconductor portion 10.

[0076] When light emitted from the side of the first semiconductor portion 10 enters the second semiconductor portion 20, it is absorbed by the second semiconductor portion 20. By having the second electrode 80 cover at least the region on the side of the second semiconductor portion 20 that faces the side of the first semiconductor portion 10, the absorption of light emitted from the side of the first semiconductor portion 10 into the second semiconductor portion 20 can be reduced. In addition, the light emitted from the side of the first semiconductor portion 10 is reflected by the second electrode 80 covering the side of the second semiconductor portion 20, thereby improving the light extraction efficiency of the light-emitting element 2.

[0077] In areas of the second semiconductor portion 20 that do not face the side surface of the first semiconductor portion 10, light reflected from, for example, the inner surface of the package housing the light-emitting element 2 may be incident. Therefore, as shown in Figures 4 and 5, it is preferable that the second electrode 80 covers the entire side surface of the second semiconductor portion 20 via the first insulating film 61. This reduces the amount of light incident on the second semiconductor portion 20 even in areas of the second semiconductor portion 20 that do not face the side surface of the first semiconductor portion 10, thereby improving the light extraction efficiency.

[0078] [Third Embodiment] Figure 6 is an enlarged top view of a portion of the light-emitting element 3 according to the third embodiment. Figure 7 is a schematic cross-sectional view of the light-emitting element 3 according to the third embodiment. Figure 7 shows a cross-section of the same portion as in Figure 3.

[0079] In the light-emitting element 3 according to the third embodiment, the first electrode 70 covers at least a region on the side surface of the first semiconductor portion 10 that faces the side surface of the second semiconductor portion 20, via the first insulating film 61. By covering the region on the side surface of the first semiconductor portion 10 that faces the side surface of the second semiconductor portion 20, the first electrode 70 can reduce the amount of light incident from the side surface of the first semiconductor portion 10 to the side surface of the second semiconductor portion 20, thereby reducing the absorption of light in the second semiconductor portion 20.

[0080] [Fourth Embodiment] Figure 8 is a schematic top view of the light-emitting element 4 according to the fourth embodiment.

[0081] In the light-emitting element 4 according to the fourth embodiment, the first electrode 70 covers the entire side surface of the first semiconductor portion 10 via the first insulating film 61. This reduces the amount of light incident on the side surface of the second semiconductor portion 20 from the side surface of the first semiconductor portion 10, and also allows the light emitted by the first active layer 12 and the light propagating within the first semiconductor portion 10 to be reflected by the first electrode 70, which covers the entire side surface of the first semiconductor portion 10, and directed towards the upper surface of the first semiconductor portion 10. This increases the amount of light extracted from the upper surface of the first semiconductor portion 10 and improves the directivity in the direction perpendicular to the upper surface of the light-emitting element 3.

[0082] Embodiments of this disclosure may include the following light-emitting elements.

[0083] [Section 1] Insulating substrate and A first conductive member disposed on the insulating substrate, A second conductive member is disposed on the insulating substrate and is separated from the first conductive member when viewed from above, A first semiconductor portion comprising: a first semiconductor layer disposed on the first conductive member and electrically connected to the first conductive member, having a first conductivity type; a first active layer disposed on the first semiconductor layer; and a second semiconductor layer disposed on the first active layer, having a second conductivity type; A second semiconductor portion, separated from the first semiconductor portion in a top view, is disposed on the second conductive member and electrically connected to the second conductive member, and comprises a third semiconductor layer having a first conductivity type, a second active layer disposed on the third semiconductor layer, and a fourth semiconductor layer having a second conductivity type disposed on the second active layer. The first electrode is electrically connected to the second semiconductor layer and the second conductive member, The fourth semiconductor layer and the second electrode electrically connected to the first conductive member, A light-emitting element comprising a light-emitting element. [Section 2] The first insulating film is further provided, having a first opening located on the upper surface of the first semiconductor portion, a side surface of the first semiconductor portion, the upper surface of the second semiconductor portion, and the side surface of the second semiconductor portion, and having a first opening located on the upper surface of the first semiconductor portion and a second opening located on the upper surface of the second semiconductor portion. The first electrode is disposed on the first insulating film and connected to the second semiconductor layer at the first aperture. The light-emitting element according to claim 1, wherein the second electrode is disposed on the first insulating film and connected to the fourth semiconductor layer at the second aperture. [Section 3] The light-emitting element according to claim 2, wherein the second electrode covers at least a region of the side surface of the second semiconductor portion that faces the side surface of the first semiconductor portion, via the first insulating film. [Section 4] The light-emitting element according to item 3, wherein the second electrode covers all of the side surfaces of the second semiconductor portion via the first insulating film. [Section 5] The light-emitting element according to any one of claims 2 to 4, wherein the first electrode covers at least a region of the side surface of the first semiconductor portion that faces the side surface of the second semiconductor portion, via the first insulating film. [Section 6] The light-emitting element according to item 5, wherein the first electrode covers all of the side surfaces of the first semiconductor portion via the first insulating film. [Section 7] The first electrode is, A first pad portion connected to the second semiconductor layer, A first extended portion extends from the first pad portion and connects to the second semiconductor layer, A second extended portion is disposed on the first insulating film and connects the first extended portion and the second conductive member, A light-emitting element according to item 2, having the characteristics of item 2. [Section 8] The first electrode has a plurality of first extended portions, Each of the multiple first extended portions includes a first extended portion connected to the second conductive member by a second extended portion, and a first extended portion not connected to the second conductive member. The light-emitting element according to claim 7, wherein the number of first extensions connected to the second conductive member by the second extension is less than the number of first extensions not connected to the second conductive member. [Section 9] The invention further comprises a second insulating film disposed between the first conductive member and the first semiconductor layer, The second insulating film has a plurality of third openings, The first conductive member is connected to the first semiconductor layer at the plurality of third openings, In a top view, the second extension portion does not overlap the third opening, as described in subparagraph 7 or 8.

[0084] The embodiments of this disclosure have been described above with reference to specific examples. However, this disclosure is not limited to these specific examples. All forms that a person skilled in the art can implement by appropriately modifying the design based on the embodiments described above in this disclosure also fall within the scope of this disclosure, insofar as they encompass the gist of this disclosure. Furthermore, within the scope of the idea of ​​this disclosure, a person skilled in the art can conceive of various modifications and variations, and these modifications and variations also fall within the scope of this disclosure. [Explanation of symbols]

[0085] 1-4...Light-emitting element, 10...First semiconductor part, 10A...First outer edge, 10B...Second outer edge, 10C...Third outer edge, 10D...Fourth outer edge, 10E...Fifth outer edge, 11...First semiconductor layer, 12...First active layer, 13...Second semiconductor layer, 13A...First layer, 13B...Second layer, 20...Second semiconductor part, 21...Third semiconductor layer, 22...Second active layer, 23...Fourth semiconductor layer, 23A...Third layer, 23B...Fourth layer, 30...Insulating substrate, 40...First conductive member, 41...First conductive layer, 4 2…Second conductive layer, 50…Second conductive member, 51…Third conductive layer, 52…Fourth conductive layer, 61…First insulating film, 61A…First opening, 61B…Second opening, 61C…Fourth opening, 61D…Fifth opening, 62…Second insulating film, 62A…Third opening, 63…Third insulating film, 63A…Sixth opening, 70…First electrode, 71…First pad portion, 72, 72A, 72B…First extended portion, 73…Second extended portion, 80…Second electrode, 81…Second pad portion, 82…Third extended portion

Claims

1. Insulating substrate and A first conductive member disposed on the insulating substrate, A second conductive member is disposed on the insulating substrate and is separated from the first conductive member when viewed from above, A first semiconductor portion comprising: a first semiconductor layer disposed on the first conductive member and electrically connected to the first conductive member, having a first conductivity type; a first active layer disposed on the first semiconductor layer; and a second semiconductor layer disposed on the first active layer, having a second conductivity type; A second semiconductor portion, separated from the first semiconductor portion in a top view, is disposed on the second conductive member and electrically connected to the second conductive member, and comprises a third semiconductor layer having a first conductivity type, a second active layer disposed on the third semiconductor layer, and a fourth semiconductor layer having a second conductivity type disposed on the second active layer. The first electrode is electrically connected to the second semiconductor layer and the second conductive member, The fourth semiconductor layer and the second electrode electrically connected to the first conductive member, A light-emitting element comprising a light-emitting element.

2. The first insulating film is further provided, having a first opening located on the upper surface of the first semiconductor portion, a side surface of the first semiconductor portion, the upper surface of the second semiconductor portion, and the side surface of the second semiconductor portion, and having a first opening located on the upper surface of the first semiconductor portion and a second opening located on the upper surface of the second semiconductor portion. The first electrode is disposed on the first insulating film and connected to the second semiconductor layer at the first aperture. The light-emitting element according to claim 1, wherein the second electrode is disposed on the first insulating film and connected to the fourth semiconductor layer at the second aperture.

3. The light-emitting element according to claim 2, wherein the second electrode covers at least a region of the side surface of the second semiconductor portion that faces the side surface of the first semiconductor portion, via the first insulating film.

4. The light-emitting element according to claim 3, wherein the second electrode covers all of the side surfaces of the second semiconductor portion via the first insulating film.

5. The light-emitting element according to any one of claims 2 to 4, wherein the first electrode covers at least a region of the side surface of the first semiconductor portion that faces the side surface of the second semiconductor portion, via the first insulating film.

6. The light-emitting element according to claim 5, wherein the first electrode covers all of the side surfaces of the first semiconductor portion via the first insulating film.

7. The first electrode is A first pad portion connected to the second semiconductor layer, A first extended portion extends from the first pad portion and is connected to the second semiconductor layer, A second extended portion is disposed on the first insulating film and connects the first extended portion and the second conductive member, A light-emitting element according to claim 2, having the characteristics of the light-emitting element according to claim 2.

8. The first electrode has a plurality of first extended portions, Each of the multiple first extended portions includes a first extended portion connected to the second conductive member by a second extended portion, and a first extended portion not connected to the second conductive member. The light-emitting element according to claim 7, wherein the number of first extensions connected to the second conductive member by the second extension is less than the number of first extensions not connected to the second conductive member.

9. The second insulating film is further disposed between the first conductive member and the first semiconductor layer, The second insulating film has a plurality of third openings, The first conductive member is connected to the first semiconductor layer at the plurality of third openings, In a top view, the second extension portion does not overlap the third opening, as described in claim 7.

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