Resonator and measurement method

Abstract

To accurately measure the dielectric properties of dielectric materials and the conductivity of conductors that make up a wiring board. [Solution] The resonator comprises a pair of conductor layers, a plate-shaped dielectric located between the pair of conductor layers, and a plurality of first via conductors and a plurality of second via conductors extending within the dielectric in a direction intersecting the conductor layers. In a plan view, each of the plurality of first via conductors is located at a predetermined interval on the outer periphery of a predetermined region. In a plan view, each of the plurality of second via conductors is located inside the predetermined region. Each of the plurality of first via conductors is mechanically connected to each of the pair of conductor layers. The dielectric is located between each of the plurality of second via conductors and each of the pair of conductor layers.

Description

Technical Field

[0001] The present disclosure relates to resonators and measurement methods.

Background Art

[0002] In recent years, mobile communications such as mobile phones have been progressing in expanding the frequency band used and increasing the frequency in order to secure communication capacity and speed. Various electronic components mounted on a wiring board are used in communication devices such as mobile phones. In order to design such communication devices, it is necessary to grasp the dielectric properties of the dielectric constituting the wiring board and the conductivity of the conductor (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] On the other hand, in the above prior art, there is still room for further improvement in accurately measuring the dielectric properties of the dielectric constituting the wiring board and the conductivity of the conductor.

[0005] The present disclosure has been devised in view of such problems in the prior art, and an object thereof is to provide a technique for accurately measuring the dielectric properties of the dielectric constituting the wiring board and the conductivity of the conductor.

Means for Solving the Problems

[0006] The resonator of this disclosure comprises a pair of conductive layers, a plate-shaped dielectric located between the pair of conductive layers, and a plurality of first via conductors and a plurality of second via conductors extending within the dielectric in a direction intersecting the conductive layers. In a plan view, each of the plurality of first via conductors is located at a predetermined interval on the outer periphery of a predetermined region. In a plan view, each of the plurality of second via conductors is located within the predetermined region. Each of the plurality of first via conductors is mechanically connected to each of the pair of conductive layers. The dielectric is located between each of the plurality of second via conductors and each of the pair of conductive layers. [Effects of the Invention]

[0007] This disclosure enables accurate measurement of the dielectric properties of dielectric materials and the conductivity of conductors constituting a wiring board. [Brief explanation of the drawing]

[0008] [Figure 1] Figure 1 is a perspective view showing an example of the configuration of the first resonator according to the embodiment. [Figure 2] Figure 2 is a plan view showing an example of the configuration of the first resonator according to the embodiment. [Figure 3] Figure 3 is a cross-sectional view taken along the line AA shown in Figure 2. [Figure 4] Figure 4 is a cross-sectional view showing another example of the configuration of the first resonator according to the embodiment. [Figure 5] Figure 5 shows an example of a resonant mode formed in the first resonator according to the embodiment. [Figure 6] Figure 6 shows an example of another resonant mode formed in the first resonator according to the embodiment. [Figure 7] Figure 7 shows an example of another resonant mode formed in the first resonator according to the embodiment. [Figure 8] Figure 8 shows an example of the configuration of the excitation hole of the first resonator according to the embodiment. [Figure 9]Figure 9 shows another example of the configuration of the excitation hole of the first resonator according to the embodiment. [Figure 10] Figure 10 shows another example of the configuration of the excitation hole of the first resonator according to the embodiment. [Figure 11] Figure 11 shows another example of the configuration of the excitation hole of the first resonator according to the embodiment. [Figure 12] Figure 12 shows another example of the configuration of the excitation hole of the first resonator according to the embodiment. [Figure 13] Figure 13 shows another example of the configuration of the excitation hole of the first resonator according to the embodiment. [Figure 14] Figure 14 shows an example of the configuration of the excitation hole of the first resonator according to the embodiment. [Figure 15] Figure 15 shows another example of the configuration of the excitation hole of the first resonator according to the embodiment. [Figure 16] Figure 16 shows an example of the configuration of the excitation hole of the first resonator according to the embodiment. [Figure 17] Figure 17 shows another example of the configuration of the excitation hole of the first resonator according to the embodiment. [Figure 18] Figure 18 shows an example of the arrangement of excitation holes in the first resonator according to the embodiment. [Figure 19] Figure 19 shows another example of the arrangement of excitation holes in the first resonator according to the embodiment. [Figure 20] Figure 20 is a plan view showing an example of the configuration of a composite substrate according to the embodiment. [Figure 21] Figure 21 is a cross-sectional view taken along the line BB shown in Figure 20. [Figure 22] Figure 22 is a flowchart showing the procedure for the measurement process according to the embodiment. [Figure 23] Figure 23 shows an example of the configuration of a measuring device according to this embodiment. [Figure 24] Figure 24 is a diagram illustrating the measurement process for the resonant frequency and no-load Q value according to the embodiment. [Figure 25]Figure 25 is a diagram illustrating the effect of the arrangement of the first absorber and the second absorber in the measurement process of the passage characteristics according to the embodiment. [Figure 26] Figure 26 shows an example of the design process results from Example 1. [Figure 27] Figure 27 shows the percentage of power loss in each resonator in Example 1. [Figure 28] Figure 28 shows the measurement results of the frequency response of the transmission coefficient in each resonator obtained in the transmission characteristic measurement process in Example 1. [Figure 29] Figure 29 shows the measurement results of the resonant frequency and no-load Q value for each resonator in Example 1. [Figure 30] Figure 30 shows the actual dimensions and calculated dielectric constants for each resonator in Example 1. [Figure 31] Figure 31 shows the calculation results of coefficients A, B, and C for each resonator in Example 1. [Figure 32] Figure 32 shows the measurement results of the conductivity of the conductor layer and the via conductor in each resonator of Example 1. [Figure 33] Figure 33 shows the measurement results of the dielectric loss tangent of the dielectric material in each resonator of Example 1. [Figure 34] Figure 34 shows an example of the design process results from Example 2. [Figure 35] Figure 35 shows the percentage of power loss in each resonator in Example 2. [Figure 36] Figure 36 shows the measurement results of the frequency response of the transmission coefficient in each resonator obtained in the transmission characteristic measurement process in Example 2. [Figure 37] Figure 37 shows the measurement results of the resonant frequency and no-load Q value for each resonator in Example 2. [Figure 38] Figure 38 shows the actual dimensions and calculated dielectric constants for each resonator in Example 2. [Figure 39] Figure 39 shows the calculation results of coefficients A, B, and C for each resonator in Example 2. [Figure 40] Figure 40 shows the measurement results of the conductivity of the conductor layer and the via conductor in each resonator of Example 2. [Figure 41] Figure 41 shows the measurement results of the dielectric loss tangent of the dielectric material in each resonator of Example 2. [Modes for carrying out the invention]

[0009] The embodiments for implementing the resonator and measurement method described herein (hereinafter referred to as "Embodiments") will be described in detail below with reference to the drawings. However, these embodiments do not limit the present disclosure.

[0010] Furthermore, each embodiment can be combined as appropriate, provided that the processing content is not inconsistent. Also, the same parts are denoted by the same reference numerals in each of the following embodiments, and redundant explanations are omitted.

[0011] Furthermore, it should be noted that drawings are schematic representations, and the dimensional relationships and proportions of each element may differ from reality. Moreover, there may be discrepancies in dimensional relationships and proportions between drawings themselves.

[0012] Furthermore, in the drawings referenced below, for the sake of clarity, mutually orthogonal X-axis, Y-axis, and Z-axis directions are sometimes defined, and a Cartesian coordinate system is shown in which the X-axis direction is the longitudinal direction of the first resonator 1 and the Z-axis direction is the thickness direction of the first resonator 1.

[0013] Furthermore, in the embodiments described below, expressions such as "identical" or "parallel" may be used, but these expressions do not require that the objects be strictly "identical" or "parallel." In other words, each of the above expressions allows for deviations such as manufacturing accuracy and installation accuracy.

[0014] <1st resonator> First, the configuration of the first resonator 1, which is an example of a resonator according to the embodiment, will be described with reference to Figures 1 to 19. Figure 1 is a perspective view showing an example of the configuration of the first resonator 1 according to the embodiment. Figure 2 is a plan view showing an example of the configuration of the first resonator 1 according to the embodiment. Figure 3 is a cross-sectional view taken along the line AA shown in Figure 2.

[0015] As shown in Figures 1 to 3, the first resonator 1 according to this embodiment is plate-shaped overall and comprises a pair of conductor layers 10, a dielectric 20, a plurality of first via conductors 30, and a plurality of second via conductors 40.

[0016] The conductive layer 10 is in the form of a film or plate and is composed of a conductive material (for example, a metal). The conductive layer 10 is mainly composed of, for example, copper, silver, tungsten, or molybdenum. The conductive layer 10 is, for example, rectangular in shape when viewed from above.

[0017] The pair of conductor layers 10 are, for example, identical in shape, and each is positioned parallel to the XY plane such that their main surfaces face each other. Each of the pair of conductor layers 10 is located, for example, on the front surface 1a and the back surface 1b of the plate-shaped first resonator 1.

[0018] The dielectric 20 is plate-shaped and composed of a dielectric material. The dielectric 20 is composed of, for example, multiple (seven in Figure 3) dielectric layers 20a stacked on top of each other.

[0019] The dielectric 20 is composed mainly of resin materials such as epoxy resin or LCP (Liquid Crystal Polymer), or ceramics such as alumina or LTCC (Low Temperature Co-fired Ceramics).

[0020] The dielectric 20 is located between a pair of conductive layers 10. Each of the pair of conductive layers 10 is located, for example, on the front surface (the surface facing the positive Z-axis) and the back surface (the surface facing the negative Z-axis) of the plate-shaped dielectric 20. That is, the pair of conductive layers 10 are located, for example, sandwiching the dielectric 20.

[0021] In the examples shown in Figures 1 to 3, the outer dimensions of the pair of conductor layers 10 and dielectric 20 in the XY plane are the same, but they do not need to be the same. In this disclosure, it is sufficient that the pair of conductor layers 10 are positioned so as to sandwich at least a portion of the dielectric 20.

[0022] In the following explanation, the conductor layer 10 located on the front surface of the dielectric 20 (the front surface 1a side of the first resonator 1) will also be referred to as the conductor layer 11, and the conductor layer 10 located on the back surface of the dielectric 20 (the back surface 1b side of the first resonator 1) will also be referred to as the conductor layer 12.

[0023] As shown in Figure 2, a pair of excitation holes 13 are located in the conductor layer 11 (see Figure 1). The pair of excitation holes 13 are positioned, for example, in a plan view, within a predetermined region R, in a location that does not overlap with the second via conductor 40.

[0024] Furthermore, this pair of excitation holes 13 are not limited to being both provided in the conductor layer 11; they may both be provided in the conductor layer 12, or one may be provided in the conductor layer 11 and one in the conductor layer 12. Details of such excitation holes 13 will be described later.

[0025] As shown in Figure 2, the multiple first via conductors 30 are positioned at predetermined intervals S around the outer periphery of a predetermined region R in a plan view. This predetermined region R is, for example, rectangular in a plan view. However, in this disclosure, the predetermined region R is not limited to being rectangular in a plan view; it may also be circular or polygonal, for example.

[0026] As shown in Figure 3, the first via conductor 30 extends within the dielectric 20 in a direction intersecting the conductor layer 10. For example, the first via conductor 30 extends within the dielectric 20 in a direction perpendicular to the conductor layer 10 (i.e., in the Z-axis direction). Also, as shown in Figure 3, each of the multiple first via conductors 30 is mechanically connected to each of the pair of conductor layers 10.

[0027] As shown in Figure 2, the multiple second via conductors 40 are located inside a predetermined region R in a plan view. As shown in Figure 3, the second via conductors 40 extend in a direction intersecting the conductor layer 10 inside the dielectric 20. For example, the second via conductors 40 extend in a direction perpendicular to the conductor layer 10 inside the dielectric 20 (i.e., in the Z-axis direction).

[0028] Furthermore, as shown in Figure 3, a dielectric 20 is located between each of the multiple second via conductors 40 and each of the pair of conductor layers 10.

[0029] The first via conductor 30 and the second via conductor 40 are made of, for example, a conductive material (such as metal). The first via conductor 30 and the second via conductor 40 are made of, for example, the same material. The first via conductor 30 and the second via conductor 40 are made of, for example, plating or conductive paste.

[0030] As shown in Figure 3, the first via conductor 30 and the second via conductor 40 are, for example, columnar. However, in this disclosure, the first via conductor 30 and the second via conductor 40 are not limited to being columnar, but may be, for example, frustum-shaped.

[0031] The first via conductor 30 and the second via conductor 40 may be completely filled inside, as shown in Figure 3, or they may be formed in a cylindrical shape, as shown in Figure 4. Furthermore, if the first via conductor 30 and the second via conductor 40 are formed in a cylindrical shape, their interiors may be filled with resin or the like.

[0032] As shown in Figure 2, the first via conductor 30 and the second via conductor 40 are, for example, circular in plan view. However, in this disclosure, the first via conductor 30 and the second via conductor 40 are not limited to being circular in plan view, but may also be polygonal or elliptical in shape, etc.

[0033] The first via conductor 30 and the second via conductor 40 may be formed by laser processing or by drilling. Furthermore, the first via conductor 30 and the second via conductor 40 may be stacked vias or spiral vias.

[0034] In this embodiment, by setting the distance S between adjacent first via conductors 30 to 1 / 4 or less of the wavelength λ, electromagnetic waves of wavelength λ can be confined within a closed space in the first resonator 1, surrounded by a pair of conductor layers 10 and a plurality of first via conductors 30, and filled with dielectric material 20.

[0035] Figure 5 shows an example of a resonance mode formed in the first resonator 1 according to the embodiment. In this embodiment, for example, by using a measuring device 200 (see Figure 23), as shown in Figure 5, the TE inside the first resonator 1 can be measured. 101 Magnetic field H(TE) in the resonant mode 101 ) and electric field E(TE) 101 ) can be formed.

[0036] Here, TE mnk When a resonant mode is described, the subscript mnk represents the mode index, where m represents the number of changes in electric field strength along the Y axis (i.e., the number of extreme values ​​of electric field strength), n represents the number of changes in electric field strength along the Z axis, and k represents the number of changes in electric field strength along the X axis.

[0037] Magnetic field H(TE) 101 The electric field E(TE) is formed in a loop shape that circles around the outer circumference of a predetermined region R in the XY cross-section of the dielectric 20 (see Figure 1), for example, as shown in Figure 5. 101 ) is the magnetic field H(TE) 101 It is formed along the central axis of the loop.

[0038] As a result, in the first resonator 1 according to the embodiment, as shown in Figure 5, the electric field E(TE) when measuring the dielectric properties of the dielectric 20 is obtained. 101 ) can be formed inside the dielectric 20.

[0039] In addition, in the embodiment, as shown in FIG. 5, inside the above-described closed space, a plurality of second via conductors 40 in an electrically floating state are located at a site where the magnetic field strength of the magnetic field H(TE 101 ) is large.

[0040] As a result, the difference between the power loss when an electromagnetic field is formed inside the first resonator 1 and the power loss when an electromagnetic field is formed inside the second resonator 2 (see FIG. 20) having only the second via conductors 40 removed becomes large.

[0041] Therefore, according to the embodiment, even for a via conductor that is conductive and has a small size and thus has a small power loss and is difficult to measure the conductivity, the conductivity can be accurately measured.

[0042] Note that the resonance mode formed by the first resonator 1 according to the embodiment is not limited to the TE 101 resonance mode shown in FIG. 5. FIGS. 6 and 7 are diagrams showing an example of another resonance mode formed by the first resonator 1 according to the embodiment.

[0043] As shown in FIG. 6, in the first resonator 1 according to the embodiment, by appropriately controlling the network analyzer 210 (see FIG. 23) of the measuring device 200 (see FIG. 23), the magnetic field H(TE 102 ) and the electric field E(TE 102 ) of the TE 102 resonance mode can be formed.

[0044] Also, as shown in FIG. 7, in the first resonator 1 according to the embodiment, by appropriately controlling the network analyzer 210 of the measuring device 200, the magnetic field H(TE 103 ) and the electric field E(TE 103 ) of the TE 103 resonance mode can be formed.

[0045] Thus, in the first resonator 1 according to the embodiment, by appropriately controlling the network analyzer 210 of the measuring device 200, the magnetic field H(TE 10k ) and the electric field E(TE 10k ) of the TE10k It is possible to form a (where k is a positive integer) such that

[0046] Furthermore, in the embodiment, as shown in Figure 2, in a plan view, each of the multiple second via conductors 40 may be located on the outer periphery of the predetermined region R, rather than on the center Rc of the predetermined region R. That is, each of the multiple second via conductors 40 may be located at a position where the distance to the outer periphery of the predetermined region R is shorter than the distance to the center Rc of the predetermined region R. When each of the multiple second via conductors 40 is located closer to the outer periphery of the predetermined region R, more TE 10k Magnetic field H(TE) in the resonant mode 10k ) and electric field E(TE) 10k It is possible to form a (where k is a positive integer) such that

[0047] As a result, a magnetic field H(TE) is formed inside the closed space created in the first resonator 1. 10k Multiple second via conductors 40 that are not mechanically connected to each of the pair of conductor layers 10 can be placed in areas where the magnetic field strength is high.

[0048] Therefore, the difference between the power loss when an electromagnetic field is formed inside the first resonator 1 and the power loss when an electromagnetic field is formed inside the second resonator 2, which lacks only the second via conductor 40, becomes even larger. Consequently, according to this embodiment, the conductivity of the via conductor can be measured with even greater accuracy.

[0049] Furthermore, in the embodiment, as shown in Figure 2, in a plan view, each of the multiple second via conductors 40 may be positioned at a predetermined interval along each of the pair of long sides of a predetermined rectangular region R.

[0050] As a result, a magnetic field H(TE) is formed inside the closed space created in the first resonator 1. 10k Multiple second via conductors 40 that are not mechanically connected to each of the pair of conductor layers 10 can be placed in areas where the magnetic field strength is high.

[0051] Therefore, the difference between the power loss when an electromagnetic field is formed inside the first resonator 1 and the power loss when an electromagnetic field is formed inside the second resonator 2, which lacks only the second via conductor 40, becomes even larger. Consequently, according to this embodiment, the conductivity of the via conductor can be measured with even greater accuracy.

[0052] Furthermore, in this embodiment, the multiple second via conductors 40 may contain the same material as the multiple first via conductors 30. This allows the conductivity of the first via conductors 30 and the conductivity of the second via conductors 40 to be measured simultaneously.

[0053] In this disclosure, we will describe a case in which multiple first via conductors 30 and multiple second via conductors 40 are made of the same material. For this reason, in this disclosure, the first via conductors 30 and the second via conductors 40 may be collectively referred to simply as "via conductors" or "vias."

[0054] In this embodiment, for example, the first resonator 1 is excited by a magnetic field by applying a magnetic field through the excitation hole 13 using a probe 230 (see Figure 23). When the first resonator 1 is excited by a magnetic field in this way, the excitation hole 13 may have a configuration such as that shown in Figure 8.

[0055] Figure 8 shows an example of the configuration of the excitation hole 13 of the first resonator 1 according to the embodiment. In Figures 8 to 17, hatching is applied to the dielectric 20 exposed from the excitation hole 13 and the conductor layer 10 in which the excitation hole 13 is formed, for ease of understanding.

[0056] As shown in Figure 8, the excitation hole 13 of the first resonator 1 (see Figure 1), which is magnetically excited by the probe 230 (see Figure 23), may have a C-shape in plan view. Then, each of the three electrodes (not shown) of the probe 230 may contact each of the three contact points C shown in Figure 8.

[0057] Thus, because the excitation hole 13 has a C-shape in plan view, the first resonator 1 can be efficiently excited by a magnetic field.

[0058] In this disclosure, the shape of the excitation hole 13 when magnetic field excitation occurs is not limited to the example in Figure 8. Figures 9 to 13 show another example of the configuration of the excitation hole 13 of the first resonator 1 according to the embodiment.

[0059] As shown in Figure 9, the excitation hole 13 in the embodiment may have a shortened C-shaped projection. Also, as shown in Figure 10, in this embodiment, the corners of the excitation hole 13 may be rounded.

[0060] Furthermore, as shown in Figure 11, the excitation hole 13 according to this embodiment may have a wider C-shaped projection. Also, as shown in Figure 12, in this embodiment, the radius of the R-shaped portion provided at the corner of the excitation hole 13 may be larger.

[0061] Furthermore, as shown in Figure 13, the excitation hole 13 according to this embodiment may not have its C-shaped upward direction aligned with the Y-axis direction, but may be inclined with respect to the Y-axis direction. Even in such a case, the C-shaped opening of the excitation hole 13 faces inward within a predetermined region R (see Figure 2), allowing the first resonator 1 (see Figure 1) to be efficiently excited by a magnetic field.

[0062] In this case, each of the three electrodes (not shown) of the probe 230 (see Figure 23) should be in contact with each of the three contact points C shown in Figure 13.

[0063] In another embodiment, the first resonator 1 is excited by an electric field, for example, by applying an electric field through the excitation hole 13 using a probe 230. When the first resonator 1 is excited by an electric field in this way, the excitation hole 13 may have a configuration such as that shown in Figure 14.

[0064] Figure 14 shows an example of the configuration of the excitation hole 13 of the first resonator 1 according to the embodiment. As shown in Figure 14, the excitation hole 13 of the first resonator 1 (see Figure 1), which is electric field excited by the probe 230 (see Figure 23), may have a circular O-shape in plan view. Each of the three electrodes (not shown) of the probe 230 may be in contact with each of the three contact points C shown in Figure 14.

[0065] Thus, because the excitation hole 13 has an O-shape in plan view, the first resonator 1 can be efficiently excited by electric field.

[0066] In this disclosure, the shape of the excitation hole 13 when an electric field is excited is not limited to the example in Figure 14. Figure 15 shows another example of the configuration of the excitation hole 13 of the first resonator 1 according to the embodiment.

[0067] As shown in Figure 15, the excitation hole 13 of the first resonator 1 (see Figure 1), which is electric field excited by the probe 230 (see Figure 23), may have a rectangular O-shape in a plan view.

[0068] In this embodiment, the excitation hole 13 of the first resonator 1, which is electric-excited by the probe 230, may have a polygonal O-shape in plan view. Also, although the examples in Figures 14 and 15 show an example in which the outer and inner contours of the excitation hole 13 are of the same shape, this disclosure is not limited to such an example, and the outer and inner contours of the excitation hole 13 may be of different shapes.

[0069] In addition, in this embodiment, the first resonator 1 can be magnetically excited by a waveguide instead of a probe 230 from the excitation hole 13. In this case, the excitation hole 13 may have a configuration such as that shown in Figure 16.

[0070] Figure 16 shows an example of the configuration of the excitation hole 13 of the first resonator 1 according to the embodiment. As shown in Figure 16, the excitation hole 13 of the first resonator 1 (see Figure 1), which is magnetically excited by a waveguide T with a square opening, may have a square shape in plan view.

[0071] Furthermore, the opening of the waveguide T should be in contact with the excitation hole 13 so as to cover it, as shown in Figure 16. That is, as shown in Figure 16, the size of the excitation hole 13 of the first resonator 1, which is magnetically excited by the waveguide T, should be smaller than the size of the opening of the waveguide T.

[0072] Thus, because the excitation hole 13 has a rectangular shape in plan view, the first resonator 1 can be efficiently magnetically excited even when a waveguide T is used instead of a probe 230.

[0073] In this disclosure, the shape of the excitation hole 13 when a waveguide T is used is not limited to the example in Figure 16. Figure 17 shows another example of the configuration of the excitation hole 13 of the first resonator 1 according to the embodiment.

[0074] As shown in Figure 17, the excitation hole 13 of the first resonator 1 (see Figure 1), which is magnetically excited by the waveguide T, may have a circular shape in plan view. Even in this case, the first resonator 1 can be efficiently magnetically excited by making the size of the excitation hole 13 smaller than the size of the opening of the waveguide T.

[0075] Figure 18 shows an example of the arrangement of excitation holes 13 in the first resonator 1 according to the embodiment. Note that in Figures 18 and 19, for ease of understanding, only the pair of excitation holes 13 and a predetermined region R are shown.

[0076] As shown in Figure 18, in this embodiment, in a plan view, each of the pair of excitation holes 13 may be located near a pair of short sides of a predetermined rectangular region R. In this way, the magnetic field H(TE) 101 By arranging a pair of excitation holes 13 near locations where magnetic fields are formed, such as (see Figure 5), and at locations as far apart as possible from each other, the first resonator 1 can be efficiently excited by a magnetic field or an electric field.

[0077] In the example shown in Figure 18, the excitation holes 13 are located near the center of the short side of a predetermined region R, but this disclosure is not limited to such an example. Figure 19 shows another example of the arrangement of the excitation holes 13 of the first resonator 1 according to the embodiment.

[0078] As shown in Figure 19, the pair of excitation holes 13 may be located near opposite corners of each other in a predetermined rectangular region R. This also allows the magnetic field H(TE) to function. 101 Since the pair of excitation holes 13 can be placed near locations where magnetic fields are formed, such as (see Figure 5), and at locations that are as far apart as possible from each other, the first resonator 1 can be efficiently excited by a magnetic field or an electric field.

[0079] In this disclosure, "nearby" means, in the case of measurements using probe 230 (see Figure 23), a location where the probes 230 do not overlap with the first via conductor 30 (see Figure 2) in a plan view (closer side), and where the probes 230 are physically separated from each other, and where the unloaded Q value Q described later is measured. u This refers to the distance (the farther side) that is electrically isolated to the extent that it does not affect the measurement.

[0080] Furthermore, in this disclosure, "nearby" may also mean, in the case of measurements using a waveguide T (see Figure 16), the distance at which the waveguide T is separated from the first via conductor 30 (see Figure 2) in a plan view (the far side).

[0081] Furthermore, in this disclosure, "nearby" refers to the unloaded Q value Q in either the measurement using probe 230 or waveguide T. u This can also refer to the distance (farthest side) at which the peak top value IL0 (see Figure 24) during measurement becomes -20 dB or less. This is because it changes not only with the structure of the excitation hole 13, but also with the position of the excitation hole 13.

[0082] <Measurement Process> Next, the details of the measurement process for conductivity and dielectric properties performed using the first resonator 1 according to the embodiment will be explained with reference to Figures 20 to 25. Figure 20 is a plan view showing an example of the configuration of the composite substrate 100 according to the embodiment. Figure 21 is a cross-sectional view taken along the line BB shown in Figure 20.

[0083] As shown in Figures 20 and 21, the composite substrate 100 according to the embodiment includes a first resonator 1, a second resonator 2, and a third resonator 3. In the measurement process according to the embodiment, for example, the conductivity and dielectric properties are measured using these three resonators. In the following description, the first resonator 1, the second resonator 2, and the third resonator 3 may be collectively referred to simply as "resonators."

[0084] The configuration of the first resonator 1 mounted on the composite substrate 100 is the same as the example shown in Figures 1 to 3, so no explanation is provided.

[0085] The second resonator 2 according to this embodiment comprises a pair of conductor layers 10, a dielectric 20, and a plurality of first via conductors 30. In this embodiment, the pair of conductor layers 10, the dielectric 20, and the plurality of first via conductors 30 provided in the second resonator 2 are made of the same material as the first resonator 1.

[0086] Furthermore, the pair of conductor layers 10, the dielectric 20, and the plurality of first via conductors 30 provided in the second resonator 2 are configured to be equal to or close in size to those of the first resonator 1, as shown in Figures 20 and 21.

[0087] Thus, the second resonator 2 according to this embodiment basically has a configuration in which the second via conductor 40 is omitted from the first resonator 1.

[0088] The third resonator 3 according to this embodiment comprises a pair of conductor layers 10, a dielectric 20, and a plurality of first via conductors 30. In this embodiment, the pair of conductor layers 10, the dielectric 20, and the plurality of first via conductors 30 provided in the third resonator 3 are made of the same material as the first resonator 1 and the second resonator 2.

[0089] Furthermore, the pair of conductor layers 10 and dielectric 20 provided in the third resonator 3 are configured to be equal to or close in size to those of the second resonator 2. On the other hand, the first via conductor 30 provided in the third resonator 3 is shorter than the second via conductor 40 of the second resonator 2, as shown in Figure 21.

[0090] Thus, the third resonator 3 according to this embodiment basically has a configuration in which the thickness of the second resonator 2 is reduced. The thickness of the third resonator 3 may be, for example, 1 / 3 or less of the thickness of the second resonator 2.

[0091] In this embodiment, as shown in Figures 20 and 21, the first resonator 1, the second resonator 2, and the third resonator 3 may be integrally formed on the composite substrate 100. This allows each component of the first resonator 1, the second resonator 2, and the third resonator 3 to be easily constructed from the same material.

[0092] In addition, this disclosure is not limited to the case in which the first resonator 1, the second resonator 2, and the third resonator 3 are integrally formed on the composite substrate 100, and at least one of the first resonator 1, the second resonator 2, and the third resonator 3 may be configured separately from the other resonators.

[0093] Furthermore, although the example in Figure 21 shows an example in which the third resonator 3 is located on only one side of the composite substrate 100, the present disclosure is not limited to such an example. For example, a pair of third resonators 3 may be provided on both sides of the composite substrate 100.

[0094] As a result, the composite substrate 100 becomes vertically symmetrical, which reduces the warping of the composite substrate 100. Therefore, according to this embodiment, the dimensional accuracy of each resonator mounted on the composite substrate 100 can be improved.

[0095] Figure 22 is a flowchart showing the procedure for the measurement process according to the embodiment. As shown in Figure 22, in the measurement process according to the embodiment, first, a design process is performed to design the first resonator 1, the second resonator 2, and the third resonator 3 (step S101).

[0096] In step S101, the operator first sets the frequency range for evaluating conductivity and dielectric properties. Next, the operator designs the dimensions of the first resonator 1, the second resonator 2, and the third resonator 3 based on the frequency range to be evaluated and the following equation (1).

[0097]

number

[0098] Here, f mnk is TE mnk The resonant frequency of the mode, where c is the speed of light and ε is the speed of light. r is the relative permittivity, μ r is relative permeability, m and n are TE mnk Mode order, w eff l is the width of the resonator. eff is the length of the resonator, and h is the height of the resonator.

[0099] The width W of the resonator (see Figure 2) is set based on the lowest-order resonant frequency f0 of the resonator. The length L of the resonator (see Figure 2) is set based on the interval of the resonant frequencies f0 in the resonator.

[0100] The heights H of the first resonator 1 and the second resonator 2 (see Figure 3) are preferably set such that, for example, the power loss ratio of the dielectric 20 in the second resonator 2 exceeds 30%. The length Hv of the second via conductor 40 in the first resonator 1 (see Figure 3) is preferably set such that, for example, the power loss ratio of the first via conductor 30 and the second via conductor 40 in the first resonator 1 exceeds 30%.

[0101] The height H of the third resonator 3 should be set, for example, such that the power loss ratio of the conductor layer 10 in the third resonator 3 exceeds 30%.

[0102] Following the process described in step S101, the measurement process according to the embodiment involves measuring the pass-through characteristics of the resonator to be evaluated (step S102). This step S102 is performed using the measuring device 200 shown in Figure 23.

[0103] Figure 23 shows an example of the configuration of the measuring device 200 according to the embodiment. As shown in Figure 23, the measuring device 200 according to the embodiment comprises a network analyzer 210, a pair of coaxial cables 220, a pair of probes 230, a metal stage 240, a first absorber 250, and a second absorber 260.

[0104] In step S102, as shown in Figure 23, a flat plate-shaped second absorber 260 made of radio wave absorber is placed on the metal stage 240. The resonator to be evaluated (first resonator 1 in Figure 23) is then placed on the second absorber 260. Furthermore, a columnar first absorber 250 made of radio wave absorber is placed on the resonator to be evaluated.

[0105] In this configuration, the first absorber 250 is positioned such that a pair of excitation holes 13 (see Figure 1) are exposed from the first absorber 250. Furthermore, the network analyzer 210 and the excitation holes 13 are connected via a coaxial cable 220 and a probe 230.

[0106] Then, in step S102, the high-frequency electromagnetic waves generated by the network analyzer 210 are input to the resonator to be evaluated via a set of coaxial cables 220, probes 230, and excitation holes 13.

[0107] Furthermore, the high-frequency electromagnetic waves that have passed through the resonator are output to the network analyzer 210 via another set of excitation holes 13, probe 230, and coaxial cable 220. By measuring the high-frequency electromagnetic waves output to the network analyzer 210, the pass-through characteristics of the resonator being evaluated can be measured.

[0108] Returning to the explanation of Figure 22, following the process of step S102 described so far, the measurement process according to the embodiment measures the resonant frequency f0 of the resonator to be evaluated (step S103). Then, in the measurement process according to the embodiment, the unloaded Q value Q of the resonator to be evaluated is measured. u Measure (step S104).

[0109] Figure 24 shows the resonant frequency f0 and the unloaded Q value Q according to the embodiment. u This is a diagram illustrating the measurement process. As shown in Figure 24, the transmission coefficient S of the resonator measured in step S102. 21 The spectrum includes the transmission coefficient S. 21 A point where this value is at its maximum is observed.

[0110] Then, in the process of step S103, the transmission coefficient S 21 The frequency at which this is maximized is extracted as the resonant frequency f0. Furthermore, in the process of step S104, the no-load Q value Q is calculated based on the following equation (2). u This is calculated.

[0111]

number

[0112] Here, f0 is the resonant frequency extracted in step S103, and IL0 is the transmission loss, i.e., the transmission coefficient S at the resonant frequency f0. 21 The value of Δf0 is the 3dB bandwidth, i.e., the transmission coefficient S 21 The value of this parameter represents the peak width at IL0-3dB.

[0113] The unloaded Q value Q is obtained in the process of step S104. u Q is an indicator of the sharpness of resonance in a resonator, and is the Q value under no load. u A larger value indicates a sharper resonance and smaller losses in the resonator. Also, as shown in equation (2), the no-load Q value Q u The value of this parameter increases as the 3dB bandwidth Δf0 decreases.

[0114] Furthermore, in the embodiment, as shown in Figure 23, in the process of step S102, the first absorber 250 and the second absorber 260 may be placed above and below the resonator to be evaluated, respectively.

[0115] Figure 25 is a diagram illustrating the effect of the arrangement of the first absorber 250 and the second absorber 260 in the measurement process of transmission characteristics according to the embodiment. As shown in Figure 25, when neither radio wave absorber is arranged, the transmission coefficient S 21 The high noise levels outside of the peak indicate that the resonance within the resonator being evaluated is dull.

[0116] On the other hand, by arranging the first absorber 250 or the second absorber 260, the transmission coefficient S 21 Because the noise in areas other than the peak is reduced, the resonance can be made sharper.

[0117] Furthermore, by arranging both the first absorber 250 and the second absorber 260, the transmission coefficient S 21 Because the noise in areas other than the peak is further reduced, the resonance can be made even sharper.

[0118] Thus, in the measurement process of the transmission characteristics according to the embodiment, the resonance inside the resonator can be made sharper by placing at least one of the first absorber 250 and the second absorber 260 around the resonator to be evaluated.

[0119] This is because the placement of the first absorber 250 and the second absorber 260 reduces the direct exchange of electromagnetic waves between the probes 230 without going through a resonator.

[0120] Therefore, according to the embodiment, by arranging at least one of the first absorber 250 and the second absorber 260 around the resonator, the dielectric properties of the dielectric 20 and the conductivity of the conductor can be measured with high accuracy.

[0121] Returning to the explanation of Figure 22, following the process in step S104 described above, the measurement process according to the embodiment calculates the actual dimensions and relative permittivity of the resonator to be evaluated (step S105).

[0122] Specifically, in step S105, the width W of the resonator, the length L of the resonator, and the relative permittivity ε are used in equation (1) above. r Let μ be an unknown variable, and the permeability μ r The order k of the resonant mode is assumed to be a known number. Then, by performing calculations using the least squares method with three or more resonant modes, the width W of the resonator, the length L of the resonator, and the relative permittivity ε are obtained. r The least squares solution is obtained.

[0123] Following the process in step S105, the measurement process according to the embodiment determines whether the evaluation of all resonators, specifically, the evaluation in steps S102 to S105, has been completed for all resonators (step S106).

[0124] If the evaluation of all resonators has not been completed (step S106, No), another resonator that has not yet been evaluated is selected for evaluation (step S107), and the process returns to step S102.

[0125] On the other hand, if the evaluation of all resonators has been completed (step S106, Yes), the measurement process of the transmission characteristics according to the embodiment calculates the conductivity of the conductor constituting each resonator and the dielectric loss tangent of the dielectric 20 (step S108), and the series of measurement processes is completed.

[0126] The details of the process in step S108 are described below. The linear equation representing the loss of the resonator is given by equation (3) below.

[0127]

number

[0128] Here, tanδ is the dielectric loss tangent of dielectric 20, σp is the conductivity of conductor layer 10, σv is the conductivity of via conductors (first via conductor 30 and second via conductor 40), and A, B, and C are coefficients calculated by computer simulation.

[0129] The coefficients A, B, and C can then be obtained by the following process. To find coefficient A, input an appropriate value for the dielectric loss tangent tanδ into equation (3) above, and set the conductivity σp and conductivity σv to infinity, and equation (3) becomes equation (4).

[0130]

number

[0131] Then, when the above equation (4) is calculated using a computer simulation, the Q value at that time is Q A Since this can be determined, the coefficient A can be found from the above dielectric loss tangent tanδ and their values.

[0132] Furthermore, when determining the coefficient B, if an appropriate value for conductivity σp is input into equation (3) above, and the dielectric loss tangent tanδ is set to zero and the conductivity σv is set to infinity, equation (3) becomes equation (5) as follows.

[0133]

number

[0134] Then, when the above equation (5) is calculated using a computer simulation, the Q value Q at that time is B Since this can be determined, the coefficient B can be found from the conductivity σp and its value.

[0135] Furthermore, when determining the coefficient C, if an appropriate value for conductivity σv is input into equation (3) above, and the dielectric loss tangent tanδ is set to zero and conductivity σp to infinity, equation (3) becomes equation (6) as follows.

[0136]

number

[0137] Then, when the above equation (6) is calculated using a computer simulation, the Q value at that time is Q C Since this can be determined, the coefficient C can be found from the conductivity σv and its value.

[0138] The linear equations representing the losses of the first resonator 1, the second resonator 2, and the third resonator 3 are given by equations (7) to (9) below, respectively.

[0139]

number

[0140]

number

[0141]

number

[0142] Then, the unloaded Q value Q was measured using the above equations (7) to (9). u The solution can be obtained from N=3. In this way, the conductivity σp of the conductor layer 10, the conductivity σv of the via conductor, and the dielectric loss tangent tanδ of the dielectric 20 can be calculated.

[0143] <Example 1> Next, Examples 1 and 2, which are examples of the measurement process according to the embodiment, will be described with reference to Figures 26 to 41, in addition to Figures 20 to 25 which have been described so far.

[0144] In Example 1, the inventor set the frequency range for evaluating conductivity and dielectric properties to 40 GHz to 60 GHz. The inventor then designed a first resonator 1, a second resonator 2, and a third resonator 3 corresponding to this frequency range (step S101 in Figure 22).

[0145] Figure 26 shows an example of the design process results for Example 1. Figure 27 shows the power loss ratio in each resonator of Example 1.

[0146] In Example 1, by designing each resonator with the dimensions shown in Figure 26, it can be seen that, as shown in Figure 27, the power loss ratio of the via conductor in the first resonator 1 exceeds 30%, the power loss ratio of the dielectric 20 in the second resonator 2 exceeds 30%, and the power loss ratio of the conductor layer 10 in the third resonator 3 exceeds 30%.

[0147] Note that the via diameter D shown in Figure 26 is also shown. v " " refers to the diameter of the first via conductor 30 and the second via conductor 40, as shown in Figure 3. Also, "land diameter D" is shown in Figure 26. L " refers to the diameter of the lands provided at both ends of the second via conductor 40, as shown in Figure 3.

[0148] Although not shown in Figure 26, in Example 1, Panasonic's MEGTRON® 8 was used for the dielectric 20, and copper plating material was used for the conductor layer 10, the first via conductor 30, and the second via conductor 40.

[0149] In Example 1, the center distance between the first via conductor 30 and the second via conductor 40 was set to 0.320 mm. Also in Example 1, the thickness of the conductor layer 10 and the land was set to 0.030 mm.

[0150] In Example 1, the shape of the excitation hole 13 was designed as shown in the example in Figure 8, with one side of the excitation hole 13 set to 0.240 mm and the distance between the C-shaped protrusions set to 0.080 mm. In Example 1, the distance between the excitation hole 13 and the first via conductor 30 and the second via conductor 40 adjacent to the excitation hole 13 was set to 0.100 mm.

[0151] Next, the inventor measured the transmission characteristics of each resonator that had been fabricated according to the design (step S102 in Figure 22).

[0152] In this measurement process of the transmission characteristics, a Keysight PNA Network Analyzer N5291A was used as the network analyzer 210 of the measuring device 200, a Keysight 11500K 1mm test cable (200mm) was used as the coaxial cable 220, and a Formfactor APC110-A-GSG-150RC (150μm pitch) was used as the probe 230. In Example 1, a magnetic field was applied from the excitation hole 13 by the probe 230 to perform magnetic field excitation.

[0153] Figure 28 shows the transmission coefficient S in each resonator obtained in the measurement process of the transmission characteristics in Example 1. 21 This figure shows the measurement results of the frequency response. As shown in Figure 28, in Example 1, a good transmission coefficient S was obtained in each resonator in the range of 40 GHz to 60 GHz at pre-set frequency intervals. 21 Multiple peaks were obtained.

[0154] Next, the inventor measured the resonant frequency f0 in each resonator from the measurement results shown in Figure 28 (step S103 in Figure 22). Then, from the measured resonant frequency f0, the inventor calculated the unloaded Q value Q in each resonator. u The value was measured (step S104 in Figure 22).

[0155] Figure 29 shows the resonant frequency f0 and unloaded Q value Q for each resonator in Example 1. u This figure shows the measurement results. As shown in Figure 29, in Example 1, multiple unloaded Q values ​​with relatively large values ​​(i.e., low loss) were measured in the range of 40 GHz to 60 GHz in each resonator. u This was obtained.

[0156] Next, the inventors calculated the actual dimensions and relative permittivity of each resonator from the measurement results shown in Figure 29 (step S105 in Figure 22). Figure 30 shows the calculation results of the actual dimensions and permittivity for each resonator in Example 1.

[0157] Next, the inventor calculated coefficients A, B, and C for each resonator from the calculation results shown in Figure 30 as part of the process in step S108 shown in Figure 22. Figure 31 shows the calculation results for coefficients A, B, and C for each resonator in Example 1.

[0158] The calculation results shown in Figure 31 are as follows: at a frequency of 55 GHz, the dielectric loss tangent tanδ = 0.002, and the conductivity of the conductor layer 10 σp = 2.9 × 10⁻¹⁰. 7 S / m, conductivity σv = 2.9 × 10⁻¹⁰ of via conductor 7 The calculation was performed in S / m.

[0159] Finally, the inventors measured the conductivity σp of the conductor layer 10, the conductivity σv of the via conductor, and the dielectric loss tangent tanδ of the dielectric 20 from the calculation results shown in Figure 31 (step S108 in Figure 22).

[0160] Figure 32 shows the measurement results of the conductivity σp of the conductor layer 10 and the conductivity σv of the via conductor in each resonator of Example 1. Figure 33 shows the measurement results of the dielectric loss tangent tanδ of the dielectric 20 in each resonator of Example 1.

[0161] Note that in Figure 32, the conductivity of copper is (5.8 × 10⁻⁶). 7 The conductivity is shown at the relative conductivity σr, normalized with S / m as 100%. Figure 33 also shows the catalog values ​​of the material used as dielectric 20 in Example 1.

[0162] As shown in Figures 32 and 33, by applying the technology of this disclosure, it was possible to accurately measure the conductivity σp of the conductor layer 10, the conductivity σv of the via conductor, and the dielectric loss tangent tanδ of the dielectric 20 in the frequency range of 40 GHz to 60 GHz.

[0163] <Example 2> In Example 2, the inventor set the frequency range for evaluating conductivity and dielectric properties to 60 GHz to 80 GHz. The inventor then designed a first resonator 1, a second resonator 2, and a third resonator 3 corresponding to this frequency range (step S101 in Figure 22).

[0164] Figure 34 shows an example of the design process results for Example 2. Figure 35 shows the power loss ratio in each resonator in Example 2.

[0165] In Example 2, by designing each resonator with the dimensions shown in Figure 34, it can be seen, as shown in Figure 35, that the power loss ratio of the via conductor in the first resonator 1 exceeds 30%, the power loss ratio of the dielectric 20 in the second resonator 2 exceeds 30%, and the power loss ratio of the conductor layer 10 in the third resonator 3 exceeds 30%.

[0166] Although not shown in Figure 26, in Example 2, as in Example 1, MEGTRON8 manufactured by Panasonic was used for the dielectric 20, and copper plating material was used for the conductor layer 10, the first via conductor 30, and the second via conductor 40.

[0167] In Example 2, the center distance between the first via conductor 30 and the second via conductor 40 was set to 0.320 mm. Also in Example 2, the thickness of the conductor layer 10 and the land was set to 0.030 mm.

[0168] In Example 2, the shape of the excitation hole 13 was designed as shown in the example in Figure 8, with one side of the excitation hole 13 measuring 0.240 mm and the distance between the C-shaped protrusions set to 0.080 mm. In Example 2, the distance between the excitation hole 13 and the first via conductor 30 and the second via conductor 40 adjacent to the excitation hole 13 was set to 0.100 mm.

[0169] Next, the inventors measured the transmission characteristics of each resonator that had been manufactured according to the design (step S102 in Figure 22). This measurement of transmission characteristics was performed using the same measuring apparatus 200 as in Example 1. In Example 2, a magnetic field was applied through the excitation hole 13 using a probe 230 to perform magnetic field excitation.

[0170] Figure 36 shows the transmission coefficient S in each resonator obtained in the measurement process of the transmission characteristics in Example 2. 21 This figure shows the measurement results of the frequency response. As shown in Figure 36, in Example 2, a good transmission coefficient S was obtained in each resonator in the range of 60 GHz to 80 GHz at pre-set frequency intervals. 21 Multiple peaks were obtained.

[0171] Next, the inventor measured the resonant frequency f0 in each resonator from the measurement results shown in Figure 36 (step S103 in Figure 22). Then, the inventor calculated the unloaded Q value Q in each resonator from the measured resonant frequency f0. u The value was measured (step S104 in Figure 22).

[0172] Figure 37 shows the resonant frequency f0 and unloaded Q value Q for each resonator in Example 2. u This figure shows the measurement results. As shown in Figure 37, in Example 2, multiple unloaded Q values ​​with relatively large values ​​(i.e., low loss) were measured in the range of 60 GHz to 80 GHz in each resonator. u This was obtained.

[0173] Next, the inventors calculated the actual dimensions and relative permittivity of each resonator from the measurement results shown in Figure 37 (step S105 in Figure 22). Figure 38 shows the calculation results of the actual dimensions and permittivity for each resonator in Example 2.

[0174] Next, the inventor calculated coefficients A, B, and C for each resonator from the calculation results shown in Figure 38 as part of the process in step S108 shown in Figure 22. Figure 39 shows the calculation results for coefficients A, B, and C for each resonator in Example 2.

[0175] The calculation results shown in Figure 39 are as follows: at a frequency of 70 GHz, the dielectric loss tangent tanδ = 0.002, and the conductivity of the conductor layer 10 σp = 2.9 × 10⁻⁶. 7 S / m, conductivity σv = 2.9 × 10⁻¹⁰ of via conductor 7 The calculation was performed in S / m.

[0176] Finally, the inventors measured the conductivity σp of the conductor layer 10, the conductivity σv of the via conductor, and the dielectric loss tangent tanδ of the dielectric 20 from the calculation results shown in Figure 39 (step S108 in Figure 22).

[0177] Figure 40 shows the measurement results of the conductivity σp of the conductor layer 10 and the conductivity σv of the via conductor in each resonator of Example 2. Figure 41 shows the measurement results of the dielectric loss tangent tanδ of the dielectric 20 in each resonator of Example 2.

[0178] Note that in Figure 40, the conductivity of copper is (5.8 × 10⁻⁶). 7 The conductivity is shown at the relative conductivity σr normalized with S / m) as 100%. Figure 41 also shows the catalog values ​​of the material used as dielectric 20 in Example 2.

[0179] As shown in Figures 40 and 41, by applying the technology of this disclosure, it was possible to accurately measure the conductivity σp of the conductor layer 10, the conductivity σv of the via conductor, and the dielectric loss tangent tanδ of the dielectric 20 in the frequency range of 60 GHz to 80 GHz.

[0180] Examples 1 and 2 above show how to measure the conductivity σp of the conductor layer 10, the conductivity σv of the via conductor, and the dielectric loss tangent tanδ of the dielectric 20 in the frequency ranges of 40 GHz to 60 GHz and 60 GHz to 80 GHz. However, the frequency range to which the technology of this disclosure can be applied is not limited to the above examples, and the technology of this disclosure can be applied to various other frequency ranges.

[0181] Furthermore, while the embodiments and examples described so far have shown techniques for accurately measuring the conductivity σp of the conductor layer 10, the conductivity σv of the via conductor, and the dielectric loss tangent tanδ of the dielectric 20 by using the first resonator 1, the second resonator 2, and the third resonator 3, this disclosure is not limited to such examples.

[0182] For example, in this disclosure, by using two resonators, a first resonator 1 and a second resonator 2, the conductivity σv of the via conductor and the dielectric loss tangent tanδ of the dielectric 20 can be measured with high accuracy.

[0183] Although the present disclosure has been described in detail above, this disclosure is not limited to the embodiments described above, and various modifications and improvements are possible without departing from the gist of this disclosure.

[0184] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. Indeed, the embodiments described above can be embodied in a variety of forms. Furthermore, the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

[0185] Furthermore, this technology can take the following configuration. (1) A pair of conductive layers, A plate-shaped dielectric located between the pair of conductive layers, A plurality of first via conductors and a plurality of second via conductors extending in a direction intersecting the conductor layer within the dielectric, Equipped with, In a plan view, each of the plurality of first via conductors is positioned at a predetermined interval on the outer periphery of a predetermined region. In a plan view, each of the plurality of second via conductors is located within the predetermined region. Each of the plurality of first via conductors is mechanically connected to each of the pair of conductor layers, The dielectric is located between each of the plurality of second via conductors and each of the pair of conductor layers. resonator. (2) In a plan view, each of the plurality of second via conductors is located on the outer periphery side of the predetermined region rather than at the center of the predetermined region. The resonator described in (1) above. (3) In a plan view, the predetermined region is rectangular in shape. In a plan view, each of the plurality of second via conductors is positioned at a predetermined interval along each of the pair of long sides of the predetermined region. The resonator described in (1) or (2) above. (4) The plurality of second via conductors contain the same material as the plurality of first via conductors. A resonator as described in any one of (1) to (3) above. (5) At least one of the pair of conductive layers has a pair of excitation holes, Each of the pair of excitation holes has a C-shape. A resonator as described in any one of (1) to (4) above. (6) In a plan view, the C-shaped opening of the excitation hole faces inward within the predetermined region. The resonator described in (5) above. (7) At least one of the pair of conductive layers has a pair of excitation holes, Each of the pair of excitation holes has an O-shape. A resonator as described in any one of (1) to (4) above. (8) At least one of the pair of conductive layers has a pair of excitation holes, Each of the pair of excitation holes has a square shape. A resonator as described in any one of (1) to (4) above. (9) In a plan view, the predetermined region is rectangular in shape. In a plan view, each of the pair of excitation holes is located near the pair of short sides of the predetermined region. A resonator as described in any one of (5) to (8) above. (10) The device comprises a pair of conductor layers, a plate-shaped dielectric located between the pair of conductor layers, and a plurality of first via conductors and a plurality of second via conductors extending within the dielectric in a direction intersecting the conductor layers, wherein in a plan view, each of the plurality of first via conductors is located at a predetermined interval on the outer periphery of a predetermined region, and in a plan view, each of the plurality of second via conductors is located within the predetermined region, each of the plurality of first via conductors is mechanically connected to each of the pair of conductor layers, and between each of the plurality of second via conductors and each of the pair of conductor layers, the device comprises a first step of measuring a plurality of resonant frequencies and a plurality of no-load Q values ​​of a first resonator in which the dielectric is located, A second step involves calculating the actual dimensions and relative permittivity of the first resonator based on the measurement results of the first step, A third step of measuring multiple resonant frequencies and multiple no-load Q values ​​of a second resonator comprising the dielectric, the pair of conductor layers, and the plurality of first via conductors, A fourth step involves calculating the actual dimensions and relative permittivity of the second resonator based on the measurement results of the third step, A fifth step in which, based on the calculation results of the second and fourth steps, the conductivity of the plurality of first via conductors and the plurality of second via conductors and the dielectric loss tangent of the dielectric are calculated, A measurement method that includes [details omitted]. (11) A sixth step of measuring multiple resonant frequencies and multiple no-load Q values ​​of a third resonator comprising the dielectric, the pair of conductor layers, and the plurality of first via conductors, wherein the length of each of the plurality of first via conductors is different from that of the second resonator, A seventh step involves calculating the actual dimensions and relative permittivity of the third resonator based on the measurement results of the sixth step, It further includes, The fifth step calculates the conductivity of the plurality of first via conductors and the plurality of second via conductors, the conductivity of the pair of conductor layers, and the dielectric loss tangent of the dielectric, based on the calculation results of the second, fourth, and seventh steps. The measurement method described in (10) above. (12) The first, third, and sixth steps are performed with electromagnetic fields formed inside the first, second, and third resonators by magnetic field excitation or electric field excitation. The measurement method described in (11) above. (13) The first, third, and sixth steps are performed with a radio wave absorber placed on at least one of the upper and lower parts of the first, second, and third resonators. The measurement method described in (11) or (12) above. [Explanation of symbols]

[0186] 1. First resonator (an example of a resonator) 2 Second resonator 3 Third resonator 10 Conductor Layers 13 Excitation holes 20 Dielectrics 30 First via conductor 40. Second via conductor 200 measuring devices R predetermined region Rc center S interval

Claims

1. A pair of conductive layers, A plate-shaped dielectric located between the pair of conductive layers, A plurality of first via conductors and a plurality of second via conductors extending in a direction intersecting the conductor layer within the dielectric, Equipped with, In a plan view, each of the plurality of first via conductors is positioned at a predetermined interval on the outer periphery of a predetermined region. In a plan view, each of the plurality of second via conductors is located within the predetermined region. Each of the plurality of first via conductors is mechanically connected to each of the pair of conductor layers, The dielectric is located between each of the plurality of second via conductors and each of the pair of conductor layers. resonator.

2. In a plan view, each of the plurality of second via conductors is located on the outer periphery side of the predetermined region rather than at the center of the predetermined region. The resonator according to claim 1.

3. In a plan view, the predetermined region is rectangular in shape. In a plan view, each of the plurality of second via conductors is positioned at a predetermined interval along each of the pair of long sides of the predetermined region. The resonator according to claim 1 or 2.

4. The plurality of second via conductors contain the same material as the plurality of first via conductors. The resonator according to claim 1 or 2.

5. At least one of the pair of conductive layers has a pair of excitation holes, Each of the pair of excitation holes has a C-shape. The resonator according to claim 1.

6. In a plan view, the C-shaped opening of the excitation hole faces inward within the predetermined region. The resonator according to claim 5.

7. At least one of the pair of conductive layers has a pair of excitation holes, Each of the pair of excitation holes has an O-shape. The resonator according to claim 1.

8. At least one of the pair of conductive layers has a pair of excitation holes, Each of the pair of excitation holes has a square shape. The resonator according to claim 1.

9. In a plan view, the predetermined region is rectangular in shape. In a plan view, each of the pair of excitation holes is located near the pair of short sides of the predetermined region. The resonator according to any one of claims 5 to 8.

10. The device comprises a pair of conductor layers, a plate-shaped dielectric located between the pair of conductor layers, and a plurality of first via conductors and a plurality of second via conductors extending within the dielectric in a direction intersecting the conductor layers, wherein in a plan view, each of the plurality of first via conductors is located at a predetermined interval on the outer periphery of a predetermined region, and in a plan view, each of the plurality of second via conductors is located within the predetermined region, each of the plurality of first via conductors is mechanically connected to each of the pair of conductor layers, and between each of the plurality of second via conductors and each of the pair of conductor layers, the device comprises a first step of measuring a plurality of resonant frequencies and a plurality of no-load Q values ​​of a first resonator in which the dielectric is located, A second step involves calculating the actual dimensions and relative permittivity of the first resonator based on the measurement results of the first step, A third step of measuring multiple resonant frequencies and multiple no-load Q values ​​of a second resonator comprising the dielectric, the pair of conductor layers, and the plurality of first via conductors, A fourth step involves calculating the actual dimensions and relative permittivity of the second resonator based on the measurement results of the third step, A fifth step in which, based on the calculation results of the second and fourth steps, the conductivity of the plurality of first via conductors and the plurality of second via conductors and the dielectric loss tangent of the dielectric are calculated, A measurement method that includes [details omitted].

11. A sixth step of measuring multiple resonant frequencies and multiple no-load Q values ​​of a third resonator comprising the dielectric, the pair of conductor layers, and the plurality of first via conductors, wherein the length of each of the plurality of first via conductors is different from that of the second resonator, A seventh step involves calculating the actual dimensions and relative permittivity of the third resonator based on the measurement results of the sixth step, It further includes, The fifth step calculates the conductivity of the plurality of first via conductors and the plurality of second via conductors, the conductivity of the pair of conductor layers, and the dielectric loss tangent of the dielectric, based on the calculation results of the second, fourth, and seventh steps. The measurement method according to claim 10.

12. The first, third, and sixth steps are performed with electromagnetic fields formed inside the first, second, and third resonators by magnetic field excitation or electric field excitation. The measurement method according to claim 11.

13. The first, third, and sixth steps are performed with a radio wave absorber placed on at least one of the upper and lower parts of the first, second, and third resonators. The measurement method according to claim 11 or 12.

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