Method for manufacturing laser chambers, laser devices, and electronic devices
The laser chamber's pre-ionization device with a dielectric pipe and insulating tube configuration addresses the wide spectral linewidth issue, enhancing pulse energy and reducing chromatic aberration for improved semiconductor exposure apparatus resolution.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- GIGAPHOTON INC
- Filing Date
- 2025-01-15
- Publication Date
- 2026-07-28
AI Technical Summary
The spectral linewidth of KrF and ArF excimer laser devices is wide, leading to chromatic aberration and reduced resolution in semiconductor exposure apparatuses, necessitating a narrowbanding module to narrow the spectral linewidth.
A laser chamber with a pre-ionization device comprising a dielectric pipe, pre-ionization internal and external electrodes, and an electrically insulating tube, configured to minimize the electric field strength on the dielectric pipe surface, thereby enhancing the insulation distance and improving pulse energy.
The configuration extends the regions for corona and main discharges, increasing the pulse energy of pulsed laser light output, thus improving the resolution and reducing chromatic aberration.
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Figure 2026122190000001_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to a laser chamber, a laser device, and a method for manufacturing an electronic device.
Background Art
[0002] In recent years, in semiconductor exposure apparatuses, as semiconductor integrated circuits are miniaturized and highly integrated, improvement of resolution has been demanded. For this reason, shortening of the wavelength of light emitted from an exposure light source has been promoted. For example, as a gas laser device for exposure, a KrF excimer laser device that outputs laser light having a wavelength of about 248 nm and an ArF excimer laser device that outputs laser light having a wavelength of about 193 nm are used.
[0003] The spectral linewidth of the spontaneous emission light of a KrF excimer laser device and an ArF excimer laser device is as wide as 350 to 400 pm. Therefore, when a projection lens is configured with a material that transmits ultraviolet rays such as KrF and ArF laser light, chromatic aberration may occur. As a result, the resolution may decrease. Therefore, it is necessary to narrow the spectral linewidth of the laser light output from the gas laser device to such an extent that chromatic aberration can be ignored. For this reason, a narrowbanding module (Line Narrowing Module: LNM) including a narrowbanding element (etalon, grating, etc.) may be provided in the laser resonator of the gas laser device in order to narrow the spectral linewidth. Hereinafter, a gas laser device whose spectral linewidth is narrowed is referred to as a narrowbanded gas laser device.
Prior Art Documents
Patent Documents
[0004]
Patent Document 1
Patent Document 2
Patent Document 3
[0005] A laser chamber according to one aspect of the present disclosure comprises a container filled with laser gas, a first electrode disposed inside the container, a second electrode positioned opposite the first electrode and closer to the inner wall of the container than the first electrode, and a pre-ionization device disposed on at least one side of the first electrode, wherein the pre-ionization device comprises a dielectric pipe, a pre-ionization internal electrode disposed inside the dielectric pipe, a pre-ionization external electrode disposed in contact with the outside of the dielectric pipe, an electrically insulating tube inserted between the dielectric pipe and the pre-ionization internal electrode at the longitudinal end of the dielectric pipe, and an electrically insulating fixing base that fixes the dielectric pipe at the longitudinal end of the dielectric pipe and makes point contact with the dielectric pipe.
[0006] A laser apparatus according to another aspect of the present disclosure comprises an optical resonator and a laser chamber arranged such that the optical path of the optical resonator passes through, wherein the laser chamber comprises a container filled with laser gas, a first electrode disposed within the container, a second electrode positioned opposite the first electrode and closer to the inner wall of the container than the first electrode, and a pre-ionization device disposed on at least one side of the first electrode, wherein the pre-ionization device comprises a dielectric pipe, a pre-ionization internal electrode disposed inside the dielectric pipe, a pre-ionization external electrode disposed in contact with the outside of the dielectric pipe, an electrically insulating tube inserted between the dielectric pipe and the pre-ionization internal electrode at the longitudinal end of the dielectric pipe, and an electrically insulating fixing base that fixes the dielectric pipe at the longitudinal end of the dielectric pipe and makes point contact with the dielectric pipe.
[0007] A method for manufacturing an electronic device according to another aspect of the present disclosure includes generating laser light with a laser device comprising: an optical resonator; a laser chamber arranged such that the optical path of the optical resonator passes through it; the laser chamber comprising: a container filled with laser gas; a first electrode disposed within the container; a second electrode disposed opposite to the first electrode and closer to the inner wall of the container than the first electrode; and a pre-ionization device disposed on at least one side of the first electrode, the pre-ionization device comprising: a dielectric pipe; an internal pre-ionization electrode disposed inside the dielectric pipe; an external pre-ionization electrode disposed in contact with the outside of the dielectric pipe; an electrically insulating tube inserted between the dielectric pipe and the internal pre-ionization electrode at the longitudinal end of the dielectric pipe; and an electrically insulating fixing base that fixes the dielectric pipe at the longitudinal end of the dielectric pipe and makes point contact with the dielectric pipe; outputting the laser light to an exposure device; and exposing a photosensitive substrate in the exposure device to the laser light in order to manufacture an electronic device. [Brief explanation of the drawing]
[0008] Some embodiments of this disclosure are described below, merely as examples, with reference to the accompanying drawings. [Figure 1] Figure 1 is a schematic diagram showing the configuration of a gas laser apparatus according to a comparative example. [Figure 2] Figure 2 is a cross-sectional view of the chamber and pulse power module of a gas laser apparatus according to a comparative example, viewed from the Z direction. [Figure 3] Figure 3 is a cross-sectional view showing the structure of the longitudinal end of a preliminary ionization device according to a comparative example. [Figure 4] Figure 4 is a cross-sectional view taken along line 4-4 in Figure 3. [Figure 5] Figure 5 shows the simulation results of the electric field strength on the inner surface of the dielectric pipe in the comparative example. [Figure 6] Figure 6 shows the structure of the longitudinal end of the pre-ionization device according to Embodiment 1. [Figure 7] Figure 7 is a cross-sectional view along line 7-7 in Figure 6. [Figure 8]Figure 8 is an enlarged view of the point contact portion of the electrical insulation fixing base in Embodiment 1. [Figure 9] Figure 9 is an enlarged view showing another form of the point contact portion of the electrically insulating fixed base. [Figure 10] Figure 10 shows the simulation results of the electric field strength on the inner surface of the dielectric pipe in Embodiment 1. [Figure 11] Figure 11 is a schematic diagram showing the configuration of the exposure apparatus. Embodiment
[0009] -table of contents- 1. Overview of the laser device related to the comparative example 1.1 Configuration 1.2 Operation 1.3 Structure of the preliminary ionization device related to the comparative example 1.4 Challenges 2. Embodiment 1 2.1 Configuration 2.2 Operation 2.3 Action and Effects 3. Regarding the manufacturing method of electronic devices 4. Others
[0010] The embodiments of this disclosure will be described in detail below with reference to the drawings. The embodiments described below are examples of the disclosure and are not intended to limit the scope of this disclosure. Furthermore, not all configurations and operations described in each embodiment are necessarily essential to the configurations and operations of this disclosure. The same reference numerals are used for identical components, and redundant descriptions are omitted.
[0011] 1. Overview of the laser device related to the comparative example 1.1 Configuration Figs. 1 and 2 are diagrams schematically showing the configuration of the laser device 1 according to the comparative example. Fig. 2 is a cross-sectional view of the laser chamber 10 and the pulse power module (PPM) 14 shown in Fig. 1 as viewed from the Z direction. In Fig. 1, the traveling direction of the laser light output from the laser device 1 is taken as the Z direction. The X direction and the Y direction are perpendicular to the Z direction and perpendicular to each other. The direction perpendicular to the plane of the paper of Fig. 1 is taken as the X direction. The X direction, Y direction, and Z direction in Fig. 1 are the same in the following drawings. The comparative example of the present disclosure is a form recognized by the applicant as being known only to the applicant and is not a known example recognized by the applicant.
[0012] The laser device 1 is a discharge-excited gas laser device including a laser chamber 10, an output coupler (OC) 12, a narrowband module (LNM) 13, a PPM 14, a charger 15, a monitor module 16, and a laser control processor 18.
[0013] The laser chamber 10 is a container filled with a laser gas, and includes a pair of main electrodes 20a, 20b, an electrical insulation block 26, a cross-flow fan 34, a motor 40, windows 46, 47, a pre-ionization device 60, a main electrode plate 64, guides 74a, 74b, 74c, 74d, a return plate 77, and a heat exchanger 79.
[0014] The laser gas is composed of, for example, a mixed gas including Ar gas or Kr gas as a rare gas, F2 gas as a halogen gas, and Ne gas or He gas as a buffer gas.
[0015] The main electrode 20a is arranged in a state of facing the main electrode 20b. The main electrode 20b is arranged at a position closer to the inner wall of the laser chamber 10 than the main electrode 20a. The electrical insulation block 26 insulates and supports the main electrode 20b from the PPM 14.
[0016] The cross-flow fan 34 rotates by the driving force of the motor 40 and circulates the laser gas in the laser chamber 10.
[0017] The pre-ionization device 60 includes a pre-ionization outer electrode 68, a pre-ionization inner electrode 70, and a dielectric pipe 72. The pre-ionization outer electrode 68 is fixed to the main electrode 20a via a guide 74a and is electrically connected to the main electrode 20a. The end of the pre-ionization outer electrode 68 is in contact with the outside of the dielectric pipe 72. The pre-ionization outer electrode 68 is a conductor, and its material is, for example, copper or brass. The pre-ionization outer electrode 68 may also be directly fixed to the main electrode 20a.
[0018] The pre-ionization electrode 70 is located inside the dielectric pipe 72. The pre-ionization electrode 70 is a conductor, and its material is, for example, copper or brass.
[0019] The dielectric pipe 72 is made of, for example, alumina ceramics (Al2O3) or sapphire. Guides 74a and 74b are positioned to sandwich the main electrode 20a, and guides 74c and 74d are positioned to sandwich the main electrode 20b. Guides 74a, 74b, 74c, and 74d have a shape that guides the laser gas from the cross-flow fan 34 to flow efficiently between the main electrodes 20a and 20b (hereinafter referred to as "between the main electrodes").
[0020] The main electrode plate 64 is a conductor, and its material is, for example, aluminum or brass. The return plate 77 is a conductor, and its material is, for example, aluminum, copper or brass. The return plate 77 electrically connects the main electrode plate 64 to the laser chamber 10.
[0021] Although Figure 2 shows an example where the auxiliary ionization device 60 is located to the left of the main electrode 20a, the auxiliary ionization device 60 only needs to be located on at least one side of the main electrode 20a, and may be located on both sides of the main electrode 20a.
[0022] PPM14 includes a charging capacitor (not shown) and a switch 22. A charger 15 is connected to the charging capacitor of PPM14. PPM14 is connected to the main electrode 20b via a feedthrough 28. When switch 22 is turned ON, PPM14 is connected so that the charge stored in the charging capacitor is transferred to the main electrodes 20a, 20b and the pre-ionization outer electrode 68 and pre-ionization inner electrode 70 in the laser chamber 10.
[0023] OC12 and LNM13 together constitute an optical resonator. The laser chamber 10 is positioned on the optical path of the optical resonator. Light within the optical resonator passes through windows 46 and 47.
[0024] OC12 is a partially reflective mirror coated with a multilayer film that reflects some of the laser light generated in the laser chamber 10 and transmits the other portion. LNM13 includes a prism 42 that magnifies the beam and a grating 44. The grating 44 is Littrow-positioned so that the angle of incidence and the angle of diffraction are the same.
[0025] The monitor module 16 includes a beam splitter 50, a focusing lens 52, and an optical sensor 54, which are positioned in the optical path of the laser beam output from the OC 12.
[0026] The laser control processor 18 functions as a control device for the laser apparatus 1. The laser control processor 18 is a processing unit that includes a storage device in which a control program is stored and a CPU (Central Processing Unit) that executes the control program. The laser control processor 18 is specially configured or programmed to perform various processes included in this disclosure. The storage device is a tangible, non-temporary, computer-readable medium, and includes, for example, a main memory and an auxiliary storage device. The computer-readable medium may be, for example, a semiconductor memory, a hard disk drive (HDD), or a solid state drive (SSD), or a combination thereof. The laser control processor 18 is electrically connected, for example, to the exposure apparatus control processor 92 of the exposure apparatus 90.
[0027] Main electrode 20a is an example of a "first electrode" in this disclosure, and main electrode 20b is an example of a "second electrode" in this disclosure. Main electrode plate 64 is an example of a "conductor plate" in this disclosure.
[0028] 1.2 Operation The laser control processor 18 controls the motor 40 to rotate the cross-flow fan 34. This causes the laser gas to circulate within the laser chamber 10 in the order of cross-flow fan 34, between the main electrodes, and the heat exchanger 79.
[0029] The laser control processor 18 sets a predetermined charging voltage to the charger 15 to achieve the target pulse energy and sends an oscillation trigger to the PPM 14. The charging capacitor in the PPM 14 is charged at the predetermined charging voltage. When the switch 22 is operated in synchronization with the oscillation trigger, the charge stored in the charging capacitor is transferred to the main electrodes 20a, 20b and the auxiliary ionization outer electrode 68 and auxiliary ionization inner electrode 70. As the charge is transferred, the voltage between the main electrodes 20a, 20b and the voltages of the auxiliary ionization outer electrode 68 and auxiliary ionization inner electrode 70 rise.
[0030] As a result, a corona discharge first occurs between the pre-ionization outer electrode 68 and the dielectric pipe 72, generating ultraviolet light. Then, the laser gas between the main electrodes is pre-ionized by the irradiation of this ultraviolet light, and a main discharge occurs between the main electrodes.
[0031] This main discharge excites the laser gas, causing laser oscillation in an optical resonator composed of OC12 and LNM13. At this time, the spectral width is narrowed by the prism 42 and grating 44 within LNM13, and narrowed pulsed laser light is output from OC12. The wavelength of the pulsed laser light is, for example, in the ultraviolet region from 150 nm to 380 nm.
[0032] Furthermore, the laser gas inside the laser chamber 10 is heated by the main discharge. As the heated laser gas passes through the heat exchanger 79, it is cooled by the cooling water flowing through the heat exchanger 79.
[0033] The pulsed laser light output from OC12 enters the monitor module 16, is partially reflected by the beam splitter 50, and enters the optical sensor 54 via the focusing lens 52. The pulse energy is then detected by the optical sensor 54. The pulsed laser light that has passed through the beam splitter 50 is output from the laser device 1.
[0034] Furthermore, the laser device 1 may be configured with a high-reflection mirror instead of the LNM13, and may output spontaneously oscillating pulsed laser light whose spectral width is not narrowed.
[0035] 1.3 Structure of the preliminary ionization device related to the comparative example Figures 3 and 4 are cross-sectional views showing the structure of the longitudinal end of the preliminary ionization device 60 according to the comparative example. Figure 4 is a cross-sectional view taken along line 4-4 in Figure 3.
[0036] The auxiliary ionization device 60 includes an electrical insulating tube 76, an electrical insulating fixing base 80, and an electrical insulating fixing angle 82.
[0037] The dielectric pipe 72 is fixed by being sandwiched between an electrical insulating fixing base 80 and an electrical insulating fixing angle 82 at its longitudinal end. The electrical insulating fixing angle 82 is fixed to the electrical insulating fixing base 80. The electrical insulating fixing base 80 is fixed to the main electrode plate 64. The material of the electrical insulating fixing base 80 and the electrical insulating fixing angle 82 is, for example, alumina ceramics.
[0038] The electrical insulation tube 76 is inserted between the dielectric pipe 72 and the pre-ionization electrode 70. The electrical insulation tube 76 covers the end of the pre-ionization electrode 70 and seals the end of the dielectric pipe 72. The reason for using the electrical insulation tube 76 is to ensure an insulating distance between the pre-ionization electrode 70, to which a high voltage is applied, and the main electrode plate 64, which has ground potential. In the structure shown in Figure 3, the path indicated by the thick dotted arrow in Figure 3 is assumed to be the short-circuit path P connecting the pre-ionization electrode 70 in the dielectric pipe 72 to the main electrode plate 64.
[0039] Here, the length D from the end of the electrical insulating tube 76 on the side of the pre-ionization electrode 70 to the end of the dielectric pipe 72 is defined as the length required to ensure the insulation distance. In Figure 3, no corona discharge for pre-ionization occurs in the region of length D required to ensure the insulation distance.
[0040] 1.4 Challenges Figure 5 shows the simulation results of the electric field strength on the inner surface of the dielectric pipe 72. In Figure 5, the distribution of the electric field strength is represented by a heat map. The path indicated by the thick dotted arrow in Figure 5 is the estimated short-circuit path EP estimated based on the simulation results. The estimated short-circuit path EP runs from the pre-ionization electrode 70, through the inner surface of the dielectric pipe 72 between the L-shaped electrical insulation tube 76 and the dielectric pipe 72, and from the end of the dielectric pipe 72, through the surface of the electrical insulation fixing base 80 to the main electrode plate 64.
[0041] In the heatmap showing the distribution of electric field strength on the inner surface of the dielectric pipe 72, as shown in Figure 5, the white areas represent regions where the electric field strength is 3kV / mm or higher, and are considered conductors, therefore not included in the insulation distance calculation. For this reason, a larger white area means a longer length D is required to ensure the insulation distance. In the simulation results shown in Figure 5, the insulation distance on the inner surface of the dielectric pipe 72 is the sum of the distances Da and Db in the region where the electric field strength is less than 3kV / mm (Da+Db). For example, if the distance Da is 6.5mm and the distance Db is 5.5mm, the insulation distance on the inner surface of the dielectric pipe 72 is 12.0mm.
[0042] It is desirable to minimize the region where the electric field strength on the surface of the dielectric pipe 72 is 3 kV / mm or higher, thereby shortening the length D required to ensure the insulation distance. Shortening the length D required to ensure the insulation distance allows for longer lengths of the region where corona discharge occurs and the region where the main discharge occurs. As a result, this leads to an improvement in the pulse energy of the pulsed laser light output by the laser device 1.
[0043] 2. Embodiment 1 2.1 Configuration Figure 6 shows the structure of the longitudinal end of the preliminary ionization device 60A according to Embodiment 1. Figure 7 is a cross-sectional view taken along line 7-7 in Figure 6. The differences between the configurations shown in Figures 6 and 7 and those in Figures 3 and 4 will be explained below.
[0044] The auxiliary ionization device 60A differs from the auxiliary ionization device 60 in that an electrical insulating fixed base 80A is installed instead of the electrical insulating fixed base 80. Of the contact parts with the dielectric pipe 72, the contact part closest to the main electrode plate 64, which is at ground potential, is a curved surface and is a point contact.
[0045] The electrical insulating fixing base 80A has a first contact portion that contacts the lower part of the dielectric pipe 72 in the Y direction, and a second contact portion that contacts the side of the dielectric pipe 72 in the X direction. The electrical insulating fixing angle 82 also has a third contact portion that contacts the upper part of the dielectric pipe 72 in the Y direction. Of these contact portions, the first contact portion is the closest to the main electrode plate 64.
[0046] The first contact portion of the electrical insulating fixed base 80A is composed of a convex curved surface and makes point contact with the dielectric pipe 72. Not only is the first contact portion a point contact, but other contact portions may also be configured to make point contact with curved surfaces. Here, point contact refers to a contact area of 1 mm². 2 The following contact is referred to: In the case of the electrical insulating base 80A, the convex-shaped portion that makes point contact with the dielectric pipe 72 is sometimes called the "point contact portion" of the electrical insulating base 80A.
[0047] Figure 8 is an enlarged view of the point contact portion of the electrical insulating base 80A. The cross-sectional shape of the YZ section of the point contact portion of the electrical insulating base 80A includes an arc. The radius of curvature r of the arc is preferably 2 mm or more and 5 mm or less. Furthermore, the non-arc portion, which is the area of the cross-sectional shape of the YZ section of the electrical insulating base 80A other than the arc, is preferably configured to be at a distance G of 1 mm or more from the dielectric pipe 72.
[0048] By configuring the electrical insulating base 80A and the dielectric pipe 72 to have a distance G in the Y direction of 1 mm or more, the region on the inner surface of the dielectric pipe 72 where the electric field strength is 3 kV / mm or more can be reduced.
[0049] The width W in the Z direction of the electrical insulating base 80A is preferably 5 mm or more and 10 mm or less. By reducing the width W of the electrical insulating base 80A, the area on the inner surface of the dielectric pipe 72 where the electric field strength is 3 kV / mm or more can be reduced.
[0050] Furthermore, the length L from the point of contact between the electrical insulating base 80A and the dielectric pipe 72 to the end of the dielectric pipe 72 is preferably 4 mm to 15 mm. The width W in the Z direction of the electrical insulating base 80A is preferably 5 mm to 10 mm.
[0051] Figure 8 illustrates a cross-sectional shape of the electrical insulating base 80A having a shoulder portion parallel to the XZ plane that extends outward from the curved surface portion containing the point-contacting arc. However, the shape of the point-contact portion of the electrical insulating base 80A is not limited to the example in Figure 8, and may also have a shape without a shoulder in the cross-sectional shape of the YZ section, for example, as shown in Figure 9 of the electrical insulating base 80B.
[0052] In other words, the cross-sectional shape of the electrical insulating base 80B may have a side surface parallel to the Y direction from the starting or ending point of the arc. The radius of curvature r of the arc of the electrical insulating base 80B is preferably 2 mm or more and 5 mm or less. Although Figure 9 shows an example where the arc is a semicircle, the arc does not have to be a semicircle.
[0053] The preferred conditions for distance G, width W, and length L of the electrical insulation fixed base 80B are the same as the preferred conditions for the electrical insulation fixed base 80A.
[0054] The point contact portion of the electrical insulating fixing base 80A or 80B preferably has a surface that is curved in the longitudinal direction of the dielectric pipe 72, and the contact point is on this curved surface. However, the shape of the point contact portion of the electrical insulating fixing base 80A, 80B is not limited to the shape of a partial cylinder which is a part of the side surface of a cylinder whose axis is perpendicular to the longitudinal direction of the dielectric pipe 72, but may also be other shapes that can achieve point contact, such as a part of a sphere or the edge of a triangular prism.
[0055] The material of the electrical insulation fixing angle 82 and the electrical insulation fixing bases 80A and 80B is, for example, alumina ceramics.
[0056] Instead of the preliminary ionization device 60 in the comparative example, a preliminary ionization device 60A is placed inside the laser chamber 10. The other configurations are the same as those of the laser device 1 in the comparative example.
[0057] 2.2 Operation Figure 10 shows the simulation results of the electric field strength on the inner surface of the dielectric pipe 72 of the preliminary ionization device 60A according to Embodiment 1.
[0058] As is clear from comparing Figure 10 and Figure 5, in the preliminary ionization device 60A, the large area on the inner surface of the dielectric pipe 72 where the electric field strength is 3 kV / mm or more is smaller. In the preliminary ionization device 60A, the insulation distance on the inner surface of the dielectric pipe 72 is the sum of the distances Dc, Dd, and De in the area where the electric field strength is less than 3 kV / mm. According to the simulation results, the distances Dc, Dd, and De are 6.5 mm, 16.5 mm, and 1.0 mm, respectively. Therefore, the insulation distance on the inner surface of the dielectric pipe 72 is 24.0 mm, which is 12.0 mm longer than that of the preliminary ionization device 60 in the comparative example.
[0059] The operation of the laser device 1 equipped with the pre-ionization device 60A according to Embodiment 1 may be the same as the operation of the laser device 1 according to the Comparative Example.
[0060] 2.3 Action and Effects According to the preliminary ionization device 60A of Embodiment 1, the insulation distance of the inner surface of the dielectric pipe 72 is longer compared to the preliminary ionization device 60 of the comparative example. Therefore, the length D required to secure the insulation distance can be made shorter in the preliminary ionization device 60A than in the preliminary ionization device 60.
[0061] As a result, the laser device 1 according to Embodiment 1 can increase the length of the region where corona discharge occurs and the length of the region where the main discharge occurs, which leads to an improvement in the pulse energy of the pulsed laser light output by the laser device 1.
[0062] Note that the simulation results shown in Figure 10 represent the case where the contact between the dielectric pipe 72, which is closest to the main electrode plate 64 (which is at ground potential), and the electrical insulating fixing base 80A is a curved point contact. However, even if other contact points are curved point contacts, the effect of shortening the length D required to secure the insulation distance can be expected.
[0063] 3. Regarding the manufacturing method of electronic devices Figure 11 is a schematic diagram showing the configuration of the exposure apparatus 90. In Figure 11, the exposure apparatus 90 includes an illumination optical system 906 and a projection optical system 908. The illumination optical system 906 illuminates the reticle pattern of a reticle (not shown) placed on the reticle stage RT with laser light incident from the laser device 1. The projection optical system 908 reduces and projects the laser light that has passed through the reticle onto a workpiece (not shown) placed on the workpiece table WT, forming an image. The workpiece is a photosensitive substrate such as a semiconductor wafer coated with photoresist.
[0064] The exposure apparatus 90 exposes the workpiece to a laser beam reflecting the reticle pattern by synchronously moving the reticle stage RT and the workpiece table WT in parallel. After transferring the reticle pattern to the semiconductor wafer through the exposure process described above, a semiconductor device can be manufactured by going through several processes. The semiconductor device is an example of an "electronic device" in this disclosure.
[0065] 4. Others The above description is intended to be illustrative and not restrictive. Therefore, it will be apparent to those skilled in the art that modifications can be made to the embodiments of this disclosure without departing from the claims. It will also be apparent to those skilled in the art that the embodiments of this disclosure can be used in combination.
[0066] Terms used throughout this specification and the claims should be interpreted as "non-limiting" unless otherwise specified. For example, terms such as "includes," "have," "equip," and "possess" should be interpreted as "not excluding the existence of components other than those described." Also, the modifier "one" should be interpreted as "at least one" or "one or more." Furthermore, the term "at least one of A, B, and C" should be interpreted as "A," "B," "C," "A+B," "A+C," "B+C," or "A+B+C." In addition, it should be interpreted as including combinations of these with anything other than "A," "B," and "C."
Claims
1. A container filled with laser gas, The first electrode is placed inside the container, A second electrode is positioned opposite the first electrode and closer to the inner wall of the container than the first electrode, A pre-ionization device is disposed on at least one side of the first electrode, Equipped with, The aforementioned pre-ionization device is dielectric pipe and A pre-ionization electrode is placed inside the dielectric pipe, A preliminary ionization electrode is positioned in contact with the outside of the dielectric pipe, An electrical insulating tube is inserted between the dielectric pipe and the pre-ionization electrode at the longitudinal end of the dielectric pipe, An electrically insulating fixing base is provided that fixes the dielectric pipe at its longitudinal end and makes point contact with the dielectric pipe, A laser chamber equipped with [a specific feature / equipment].
2. A laser chamber according to claim 1, The aforementioned pre-ionization device is The device comprises the first electrode and a conductor plate for fixing the electrical insulating base, Of the contact portions between the electrical insulating base and the dielectric pipe, the contact portion closest to the conductor plate makes point contact. Laser chamber.
3. A laser chamber according to claim 1, The location of the point contact is within a range of 4 mm to 15 mm from the end of the dielectric pipe. Laser chamber.
4. A laser chamber according to claim 1, The electrical insulating fixing base has a surface that is curved in the longitudinal direction of the dielectric pipe, and the curved surface makes point contact with the dielectric pipe. Laser chamber.
5. A laser chamber according to claim 1, The cross-sectional shape of the electrical insulating fixing base at the point contact location includes an arc. Laser chamber.
6. A laser chamber according to claim 5, The radius of curvature of the aforementioned arc is in the range of 2 mm to 5 mm. Laser chamber.
7. A laser chamber according to claim 5, A portion of the cross-sectional shape other than the arc portion is separated from the dielectric pipe by 1 mm or more. Laser chamber.
8. A laser chamber according to claim 1, The material of the aforementioned electrical insulating fixing base is alumina ceramics. Laser chamber.
9. Optical resonators and, The system comprises a laser chamber arranged so that the optical path of the optical resonator passes through it, The laser chamber is A container filled with laser gas, The first electrode is placed inside the container, A second electrode is positioned opposite the first electrode and closer to the inner wall of the container than the first electrode, A pre-ionization device is disposed on at least one side of the first electrode, Equipped with, The aforementioned pre-ionization device is dielectric pipe and A pre-ionization electrode is placed inside the dielectric pipe, A preliminary ionization electrode is positioned in contact with the outside of the dielectric pipe, An electrical insulating tube is inserted between the dielectric pipe and the pre-ionization electrode at the longitudinal end of the dielectric pipe, An electrically insulating fixing base is provided that fixes the dielectric pipe at its longitudinal end and makes point contact with the dielectric pipe, A laser device equipped with the following features.
10. A laser apparatus according to claim 9, The aforementioned pre-ionization device is The device comprises the first electrode and a conductor plate for fixing the electrical insulating base, Of the contact portions between the electrical insulating base and the dielectric pipe, the contact portion closest to the conductor plate makes point contact. Laser device.
11. A laser apparatus according to claim 9, The location of the point contact is within a range of 4 mm to 15 mm from the end of the dielectric pipe. Laser device.
12. A laser apparatus according to claim 9, The electrical insulating fixing base has a surface that is curved in the longitudinal direction of the dielectric pipe, and the curved surface makes point contact with the dielectric pipe. Laser device.
13. A laser apparatus according to claim 9, The cross-sectional shape of the electrical insulating fixing base at the point contact location includes an arc. Laser device.
14. A laser apparatus according to claim 13, The radius of curvature of the aforementioned arc is in the range of 2 mm to 5 mm. Laser device.
15. A laser apparatus according to claim 13, A portion of the cross-sectional shape other than the arc portion is separated from the dielectric pipe by 1 mm or more. Laser device.
16. A laser apparatus according to claim 9, The material of the aforementioned electrical insulating fixing base is alumina ceramics. Laser device.
17. A method for manufacturing electronic devices, Optical resonators and, The system comprises a laser chamber arranged so that the optical path of the optical resonator passes through it, The laser chamber is A container filled with laser gas, The first electrode is placed inside the container, A second electrode is positioned opposite the first electrode and closer to the inner wall of the container than the first electrode, A pre-ionization device is disposed on at least one side of the first electrode, Equipped with, The aforementioned pre-ionization device is dielectric pipe and A pre-ionization electrode is placed inside the dielectric pipe, A preliminary ionization electrode is positioned in contact with the outside of the dielectric pipe, An electrical insulating tube is inserted between the dielectric pipe and the pre-ionization electrode at the longitudinal end of the dielectric pipe, An electrically insulating fixing base is provided that fixes the dielectric pipe at its longitudinal end and makes point contact with the dielectric pipe, A laser device equipped with the following generates laser light: The laser light is output to the exposure apparatus, To manufacture an electronic device, the process includes exposing a photosensitive substrate to laser light within the exposure apparatus, A method for manufacturing electronic devices.