Measurement systems, processing systems, and related apparatus and methods including bandgap materials

Abstract

Embodiments of the present disclosure relate to measurement systems, processing systems, and related apparatus and methods including bandgap material for temperature measurement calibration. In one or more embodiments, the measurement system includes a substrate support assembly including an inner section and an outer section. The inner section includes a first surface, a second surface opposite the first surface, one or more first support recesses formed in the first surface, and one or more openings extending between the one or more first support recesses and the second surface. The measurement system includes one or more calibration substrates sized and molded to be at least partially positioned within one or more first support recesses. The measurement system includes a band edge calibration assembly including an energy source and a band edge detector.

Description

Technical Field

[0001]

[0001] Embodiments of the present disclosure relate to measurement systems, processing systems, and related devices and methods that include bandgap materials for temperature measurement calibration.

Background Art

[0002]

[0002] Semiconductor substrates are processed for various applications, including the manufacture of devices for integrated circuits and microdevices. By accurately controlling the heat source, it becomes possible to heat the substrate within an acceptable range. The temperature of the substrate can affect the uniformity of the material deposited on the substrate.

[0003]

[0003] The temperature of the substrate can be measured using a temperature sensor throughout the deposition process. Over time, the temperature readings of the temperature sensor may drift due to changes in the state of the hardware within the processing chamber. This can affect the temperature measurement over time of the heating lamp and / or the substrate support (among other factors), and can hinder accuracy. The coating of one or more windows can also affect the temperature measurement and can hinder accuracy. Furthermore, receiving energy that is not due to emissivity can affect the accuracy of the measurement. Calibration methods can include opening the processing chamber and stopping the operation of the machine. Additionally, calibrating multiple temperature sensors at different positions can be difficult and may take time.

[0004]

[0004] Therefore, there is a need for improved methods and devices for calibrating the temperature sensors of systems that include heat treatment chambers.

Summary of the Invention

[0005]

[0005] Embodiments of the present disclosure relate to measurement systems, processing systems, and related devices and methods that include bandgap materials for temperature measurement calibration. In one or more embodiments, the bandgap materials are different from each other.

[0006]

[0006] In one or more embodiments, a measurement system for measuring temperature applicable to semiconductor manufacturing includes a substrate support assembly. The substrate support assembly includes an inner section and an outer section. The inner section includes a first surface, a second surface opposite to the first surface, one or more first support recesses formed in the first surface, and one or more openings extending between the one or more first support recesses and the second surface. The outer section is configured to support the outer region of the inner section. The measurement system includes one or more calibration substrates sized and molded to be at least partially positioned within one or more first support recesses. The measurement system includes a band edge calibration assembly including an energy source positioned to emit first energy and a band edge detector positioned adjacent to the energy source and positioned to receive first energy.

[0007]

[0007] In one or more embodiments, a system for processing a substrate applicable to semiconductor manufacturing includes a chamber body including one or more side walls. The one or more side walls define at least partially the internal space. The system includes a lid, a window, one or more heat sources configured to heat the internal space, and a substrate support assembly disposed within the internal space. The substrate support assembly includes an inner section and an outer section. The inner section includes a first surface, a second surface opposite the first surface, a plurality of first support recesses formed in the first surface, and a plurality of openings extending between the plurality of first support recesses and the second surface. The outer section is configured to support the outer region of the inner section. The system includes a band edge calibration assembly including an energy source positioned to emit a first energy and a band edge detector positioned adjacent to the energy source and positioned to receive the first energy.

[0008]

[0008] In one or more embodiments, a method for calibrating measurements applicable to semiconductor manufacturing includes transporting a plurality of calibration substrates into a processing chamber. The plurality of calibration substrates are supported by a substrate support. The method includes irradiating the plurality of calibration substrates using an energy source, measuring a plurality of band-edge absorption wavelengths using a band-edge detector, and measuring a plurality of temperatures of the calibration substrates using one or more temperature sensors. The method includes determining a plurality of calibration temperatures of the calibration substrates using the band-edge absorption wavelengths. The method includes calibrating one or more temperature sensors by comparing a plurality of temperatures of the calibration substrates with a plurality of calibration temperatures of the calibration substrates. The method includes transporting the calibration substrates supported by the substrate support out of the processing chamber.

[0009]

[0009] To enable a more detailed understanding of the features of the present disclosure outlined above, a more specific description of the present disclosure can be obtained by referring to embodiments, some of which are shown in the accompanying drawings. However, it should be noted that the accompanying drawings show only exemplary embodiments and should not be considered to limit the scope of the embodiments, allowing for other equally valid embodiments. [Brief explanation of the drawing]

[0010] [Figure 1] This is a schematic cross-sectional view of a processing system according to one or more embodiments. [Figure 2] This is a schematic enlarged view of the processing system shown in Figure 1, according to one or more embodiments. [Figure 3] Figure 2 shows a schematic top view of the inner and outer sections and one or more calibration substrates according to one or more embodiments. [Figure 4] This is a schematic cross-sectional view of a measuring assembly used for the processing chamber shown in Figure 1, according to one or more embodiments. [Figure 5] This is a schematic enlarged view of the processing system shown in Figure 1, according to one or more embodiments. [Figure 6]Figure 5 shows a schematic top view of the inner and outer sections and one or more calibration substrates according to one or more embodiments. [Figure 7] This is a partial schematic cross-sectional view of an insitu reflectance measurement system (ISR) that can be used with a measurement assembly according to one or more embodiments. [Figure 8] This is a schematic flowchart illustrating a method of using the measurement assembly shown in Figure 1, according to one or more embodiments. [Figure 9] This is a schematic diagram of a method for calibrating a temperature sensor, such as the temperature sensor shown in Figure 1, according to one or more embodiments. [Figure 10] This describes the measurement of wavelength intensity over a certain wavelength range according to one or more embodiments. [Figure 11] A correlation temperature graph is shown according to one or more embodiments. [Modes for carrying out the invention]

[0011]

[0021] For ease of understanding, the same reference numerals were used to indicate identical elements common to the figures where possible. It is believed that elements and features of one embodiment can be usefully incorporated into other embodiments without further description.

[0012]

[0022] Embodiments of this disclosure relate to measurement systems, processing systems, and related apparatus and methods, including different bandgap materials for temperature measurement calibration.

[0013]

[0023] Figure 1 is a schematic cross-sectional view of a processing system 100 according to one or more embodiments. The processing system 100 includes a processing chamber 101 and a controller 175. The processing system 100 may be configured to perform an epitaxial deposition process within the processing chamber 101.

[0014]

[0024] The processing chamber 101 includes a housing structure 102 made of a process-resistant material such as aluminum or stainless steel, for example 316L stainless steel. The housing structure 102 can be at least a part of the chamber body. The housing structure 102 surrounds various functional elements of the processing chamber 101, such as a quartz chamber 104 that includes an upper quartz window 105 and a lower quartz window 106. The quartz chamber 104 surrounds an internal space 110 (also called a processing space). One or more liners 108, 109 can protect the housing structure 102 from reactive chemicals and / or insulate the quartz chamber 104 from the housing structure 102.

[0015]

[0025] The processing chamber 101 includes a substrate support assembly 120. The substrate support assembly 120 includes a susceptor assembly 130. The substrate 50 can be positioned on the susceptor assembly 130 during processing such as during deposition.

[0016]

[0026] The processing chamber 101 can further include an upper heat source 164A and a lower heat source 164B for heating the substrate 50 and / or the internal space 110. The heat sources 164A, 164B can be radiant heat sources such as lamps, for example, halogen lamps and / or infrared (IR) lamps. In one or more embodiments, the heat sources 164A, 14B are operable to emit IR light and / or ultraviolet light. The present disclosure contemplates that other heat sources can be used (in addition to or instead of lamps) for the various heat sources described herein. For example, as the various heat sources described herein, resistive heaters, light-emitting diodes (LEDs), and / or lasers can be used.

[0017]

[0027] The substrate support assembly 120 may include an actuator 119, an outer shaft 121, and an inner shaft 122. The actuator 119 is configured to move the inner shaft 122 vertically with respect to the outer shaft 121. The actuator 119 is further configured to rotate the inner shaft 122 while the outer shaft 121 remains stationary. The inner shaft 122 is configured to rotate about a central axis C that extends vertically through the center of the inner shaft 122.

[0018]

[0028] The substrate support assembly 120 includes a susceptor assembly 130, a support plate 125, and a plurality of support pins 126 (e.g., three support pins 126 positioned 120 degrees apart from each other at the same distance from the central vertical axis C). In one or more embodiments, the support plate 125 and the support pins 126 can be formed of quartz or silicon carbide. The support plate 125 is positioned on top of (e.g., directly on top of) the inner shaft 122. The support plate 125 may include a center 125C that is aligned with the central vertical axis C. Each support pin 126 is positioned on top of (e.g., immediately on top of) the support plate 125. The susceptor assembly 130 is positioned on top of (e.g., immediately on top of) the support pins 126.

[0019]

[0029] The susceptor assembly 130 includes an outer section 131 and an inner section 150. The inner section 150 is positioned on and supported by the outer section 131. The inner section 150 can be easily moved (e.g., lifted) away from the outer section 131, as will be described in more detail below. In one or more embodiments, the inner section 150 and / or the outer section 131 are formed of an opaque material (e.g., white quartz, gray quartz, impregnated particles (such as SiC particles or silicon particles), black quartz, silicon carbide (SiC), and / or SiC-coated graphite). In one or more embodiments, the outer section 131 may have a ring shape. The outer section 131 may be positioned around the inner section 150. The inner section 150 may be positioned on a portion of the outer section 131, as will be described in more detail below. The processing chamber 101 may include a preheating ring 114 that can be positioned around the susceptor assembly 130.

[0020]

[0030] The substrate support assembly 120 includes a first plurality of lift pins 140A and a second plurality of lift pins 140B. For simplicity of the diagram, one of each of the plurality of lift pins 140A and 140B is shown in Figure 1. In one or more embodiments, the first plurality of lift pins 140A and the second plurality of lift pins 140B may be made of quartz (e.g., transparent quartz). In one or more embodiments, the first plurality of lift pins 140A may consist of three lift pins 140A 1-3 The second set of lift pins 140B includes three lift pins 140B 1-3 The first set of lift pins 140A and the second set of lift pins 140B may include two lift pins of each type, or more than three lift pins of each type.

[0021]

[0031] A first set of lift pins 140A may be positioned and configured to lift the substrate 50 above the susceptor assembly 130, allowing the substrate 50 to be moved in and out of the internal space 110 of the processing chamber 101. A second set of lift pins 140B may be positioned and configured to lift the inner section 150 of the susceptor assembly 130 above the outer section 131 of the susceptor assembly 130, allowing the inner section 150 of the susceptor assembly 130 to be moved into and out of the internal space 110 of the processing chamber 101.

[0022]

[0032] The substrate support assembly 120 may further include three lift pin pads 123. More or fewer lift pin pads (e.g., two lift pin pads) may be used. Each lift pin pad 123 may be mounted on the outer shaft 121. In one or more embodiments, the lift pin pads 123 may be formed of quartz (e.g., transparent quartz).

[0023]

[0033] The lift pin pads 123 can be positioned 120 degrees apart from each other with respect to a central axis C extending through the center of the outer shaft 121. The first lift pin pad 1231 and the second lift pin pad 1232 are shown in Figure 1. The third lift pin pad 1233 is not visible in Figure 1. Each lift pin pad 123 is also positioned from the central axis C at the same distance as the distance of each lift pin 140A, 140B from the center 125C of the support plate 125. As will be described in more detail below, the position of the lift pads 123 allows the substrate support assembly 120 to support the support plate 125, (1) the first set of lift pins 140A 1-3Each of the first can be rotated to a substrate lift position (first position) where it aligns with one of the lift pin pads 123, or (2) each of the second plurality of lift pins 140B can be rotated to an inner susceptor lift position (second position) where it aligns with one of the lift pin pads 123. As used herein, “overlies” and “underlies” refer to components that have different vertical positions but at least partially overlap in horizontal positions along their respective XY planes.

[0024]

[0034] When the support plate 125 is in the substrate lift position, the actuator 119 can lower the inner shaft 122, which causes the lift pins 140A to contact the lift pin pads 123 and, using the movable lift pin caps as will be described in more detail below, push the substrate 50 onto the inner section 150 of the susceptor assembly 130. When the actuator 119 lowers the inner shaft 122 and the first set of lift pins 140A contact the support plate 125 and the lift pin pads 123 in the substrate lift position, the second set of lift pins 140B do not contact any of the lift pin pads 123 and instead move closer to the lower quartz window 106.

[0025]

[0035] When the support plate 125 is in the inner susceptor lift position, the actuator 119 can lower the inner shaft 122, as will be described in more detail below, bringing the lift pins 140B into contact with the lift pin pads 123 and pushing the inner section 150 of the susceptor assembly 130 onto the outer section 131. When the actuator 119 lowers the inner shaft 122 and brings the second set of lift pins 140B into contact with the support plate 125 and lift pin pads 123 in the inner susceptor raised position, the first set of lift pins 140A will not contact any of the lift pin pads 123, but will instead move closer to the lower quartz window 106.

[0026]

[0036] In one or more embodiments, one or more of the lift pin pads 123 may include a sensor (e.g., a proximity sensor) connected to the controller 175 to detect when one of the lift pins 140A, 140B is on the lift pin pad 123. The controller 175 can use feedback from the sensor to stop the rotation of the support plate 125 by the actuator 119. This allows the controller to align the first plurality of lift pins 140A onto the lift pin pad 123 for lifting the substrate 50, or to align the first plurality of lift pins 140B onto the lift pin pad 123 to lift the inner section 150.

[0027]

[0037] In one or more embodiments, the processing chamber 101 may include an encoder 180. In one or more embodiments, the encoder may be mounted outside the inner shaft 122, for example, near the bottom of the inner shaft 122. The encoder 180 can be used to control the amount of angle (e.g., 60 degrees, 90 degrees, 180 degrees, etc.) by which the susceptor assembly 130 is rotated from its home position. By determining and controlling this angular rotation of the inner shaft 122, it becomes possible to rotate the susceptor assembly 130 to any angle from its home position, thereby providing the ability to rotate the susceptor assembly 130 and the substrate 50 to angular positions such as a first position where the lift pin pad 123 is aligned with a first plurality of lift pins 140A and a second position where the lift pin pad 123 is aligned with a second plurality of lift pins 140B.

[0028]

[0038] The processing system 100 further includes a controller 175 for controlling the processing performed by the processing system 100. The controller 175 can be any type of controller used in industrial settings (such as a programmable logic controller (PLC)). The controller 175 includes a processor 177, memory 176, and input / output (I / O) circuits 178. The controller 175 may include one or more of the following components, such as one or more power supplies, a clock, communication components (e.g., a network interface card), and a user interface, which is typical for controllers for semiconductor equipment.

[0029]

[0039] Memory 176 may include non-transient memory (e.g., non-transient computer-readable media). Non-transient memory may be used to store the programs and settings described below. Memory 176 may include one or more readily available memories such as read-only memory (ROM) (e.g., electrically erasable programmable read-only memory (EEPROM)), flash memory (e.g., flash drives), floppy disks, hard disks, random access memory (RAM) (e.g., non-volatile random access memory (NVRAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, etc.)), or any other form of local or remote digital storage.

[0030]

[0040] The processor 177 is configured to execute various programs stored in memory 176 (for example, the epitaxial deposition process and the process for transferring the substrate and susceptor into and out of the internal space 110). While these programs are being executed, the controller 175 can communicate with I / O devices via I / O circuit 178. For example, during the execution of these programs and communication via I / O circuit 178, the controller 175 can control outputs such as the rotational position of the susceptor assembly 130 relative to the lift pin pad 123 and the vertical position of the susceptor assembly 130 through the use of actuator 119. Memory 176 may further include various operating settings used to control the processing system 100.

[0031]

[0041] The controller 175 is configured to perform any of the steps described herein. In one or more embodiments, instructions stored in memory 176, when executed, cause one or more operations of method 800 and / or method 900 (described later) to be performed in relation to the processing chamber 101. The various operations described herein (such as the operations of method 800 and / or method 900) can be performed automatically using the controller 175, or automatically or manually using specific operations performed by the user.

[0032]

[0042] The processing system 100 includes a measurement assembly 270 according to one or more embodiments. A controller 175 can control the measurement assembly 270 and calibrate one or more temperature sensors 272, 278. In one or more embodiments, one or more temperature sensors 272, 278 each include a pyrometer including a silicon sensor. The measurement assembly 270 facilitates accurate measurement of the temperature of the substrate 50. The measurement assembly 270 includes an energy source 274 (e.g., a light source) and a band edge detector 276. The upper temperature sensor 272, energy source 274, and band edge detector 276 are located above the substrate 50. The lower temperature sensor 278 is located below the substrate 50. The energy source 274 and band edge detector 276 are part of the band edge calibration assembly of the measurement assembly 270.

[0033]

[0043] The energy source 274 is positioned to emit a first energy, and the band edge detector 276 is positioned adjacent to the energy source 274 to receive the first energy.

[0034]

[0044] The energy source 274 is a laser light source having a controlled intensity and wavelength range. In one or more embodiments, a broadband light source is used. The energy source 274 may be a diode laser or an optical cable. If the energy source 274 is an optical cable, the optical cable is connected to an independent energy source (e.g., a light source) which may be located near the processing chamber 101. The energy source 274 may be a bundle of lasers or optical cables such that multiple beams (e.g., optical beams) are focused onto a first calibration beam 286 (e.g., a calibration optical beam). In one or more embodiments, the energy source 274 can emit radiation in a variety of wavelength ranges. By varying the wavelength range, the energy source 274 can emit wavelengths within about 200 nm of the expected absorption edge wavelength of the calibration substrate (described later). Using a variety of wavelength ranges eliminates noise that may be caused by the use of a wider wavelength spectrum and increases the intensity of the narrower range of emission from the energy source 274, thereby increasing the signal intensity received by the band-edge detector 276. In one or more embodiments, one or more of the heat sources 164A are used as the energy source 274. In one or more embodiments, the energy source 274 may be classified as a radiation source, such as a thermal radiation source or a broadband radiation source. The radiation source may be a laser diode or an optical assembly. The optical assembly may include a laser, a lamp, and / or a bulb, and / or multiple lenses, mirrors, or a combination of lenses and mirrors.

[0035]

[0045] The band-edge detector 276 measures the intensity of energy (e.g., light) at different wavelengths in the second calibration beam 284 (e.g., light) reflected from the calibration substrate 350. The band-edge detector 276 is configured to find the wavelength at which the calibration substrate 350 transitions from absorbing the wavelength of radiation to reflecting almost the entire wavelength of radiation. The band-edge detector 276 may include several optical components positioned within it to isolate and measure the second calibration beam 284. In one or more embodiments, the band-edge detector 276 is a scanning band-edge detector that scans a range of wavelengths to determine the transition wavelength at which the calibration substrate (instead of the substrate 50) transitions from absorbing to reflected radiation. In one or more embodiments, the band-edge detector 276 measures the intensity of energy (e.g., light) at wavelengths transmitted through the calibration substrate (described later) from below (e.g., through the aperture 255 and then through the calibration substrate 260 described later). The intensity of the wavelength of radiation transmitted through the calibration substrate can be measured by the band-edge detector 276. The band-edge detector 276 then determines the transition wavelength at which the calibration substrate 350 transitions from the absorption wavelength to the transmission wavelength. An optional filter may be placed between the band-edge detector 276 and the inner and outer sections 130, 250 (described later) and configured to filter out radiation emitted by the heat sources 164A, 164B.

[0036]

[0046] Figure 2 is a schematic enlarged view of the processing system 100 shown in Figure 1, according to one or more embodiments. In the execution mode shown in Figure 2, the inner section 150 is replaced by the inner section 250.

[0037]

[0047] The inner section 250 includes an outer shoulder 251, a first surface 252, a second surface 253 opposite the first surface 252, one or more first support recesses 254 formed in the first surface 252, and one or more openings 255 extending between one or more first support recesses 254 and the second surface 263. The outer section 131 is configured to support the outer region of the inner section 250. One or more calibration substrates 260 (one shown in Figure 2) are at least partially positioned within one or more first support recesses 254.

[0038]

[0048] Figure 3 is a schematic top view of the inner section 250 and outer section 130 and one or more calibration substrates 260 shown in Figure 2, according to one or more embodiments. In the mounting configurations shown in Figures 2 and 3, the inner section 250 supports a single calibration substrate 260 (first calibration substrate 260A) for calibration. The inner section 250 and the first calibration substrate 260A can be removed from the processing chamber 101, and one or more additional substrates 260B-260E (four shown) can be sequentially moved into and out of the processing chamber 101 for calibration. One or more additional calibration substrates 260B-260E can be moved in and out of the processing chamber 101 on the same inner section 250 or on one or more additional inner sections (which may be similar to the inner section 250 in one or more aspects, features, components, operation, and / or characteristics). If the calibration boards 260A to 260E are not located inside the processing chamber 101, they can be stored in an external location (such as a cassette), such as inside the transfer chamber and / or load lock chamber.

[0039]

[0049] At least two of the calibration substrates 260A to 260E have different bandgap materials. In one or more embodiments, a lower temperature sensor 278 irradiates the inner section 250 at approximately position 261.

[0040]

[0050] Figure 4 is a schematic cross-sectional view of a measuring assembly 270 used for the processing chamber 101 of Figure 1, according to one or more embodiments. In addition to the components described with respect to Figure 1, the measuring assembly 270 of Figure 4 includes a first window 403, a second window 408, a third window 404, a fourth window 407, and a cover 420.

[0041]

[0051] The first window 403 is located within the first opening 402. The first window 403 is located between the upper temperature sensor 272 and the upper window 105. The first window 403 is located between the upper temperature sensor 272 and the calibration substrate 260A. The first window 403 is a quartz window, allowing radiation from within the processing chamber 101 to pass through it. The first window 403 can filter the radiation emitted by the calibration substrate 260A, allowing the wavelengths measured by the upper temperature sensor 272 to be filtered while filtering out other wavelengths. Radiation traveling along the first measurement radiation path 282 travels between the uppermost side of the calibration substrate 260A and the upper temperature sensor 272. The first measurement radiation path 282 intersects with both the upper window 105 and the first window 403. In one or more embodiments, the first measurement radiation path 282 may intersect the uppermost side of the calibration substrate 260A at any radial position along the calibration substrate 260A. In one or more embodiments, the first measurement radiation path 282 intersects the uppermost surface 358 of the calibration substrate 260A at a specific position, for example, less than 15 mm from the center of the calibration substrate, for example less than 10 mm from the center of the calibration substrate, for example less than 5 mm from the center of the calibration substrate, or the first measurement radiation path 282 intersects the uppermost surface of the calibration substrate 260A with a radius of about 110 mm to about 130 mm, for example about 115 mm to about 125 mm, for example about 120 mm.

[0042]

[0052] The second window 408 is located within the second opening 409. The second window 408 is positioned between the lower temperature sensor 278 and the lower window 106. Thus, the second window 408 is positioned between the lower temperature sensor 278 and the calibration substrate 260A. In the implementation shown in Figure 4, the lower temperature sensor 278 is approximately aligned below the center of the calibration substrate 260A. The second window 408 is a quartz window that allows radiation from within the processing chamber 101 to pass through it. The second window 408 can filter the radiation emitted by the calibration substrate 260A, allowing wavelengths to be measured by the lower temperature sensor 278 and filtering out other wavelengths. Radiation traveling along the second measurement radiation path 288 travels between the bottom side of the calibration substrate 260A and the low temperature sensor 278. The second measurement radiation path 288 intersects with both the lower window 106 and the second window 408. In one or more embodiments, the second measurement radiation path 288 may intersect the bottom or inner section 250 of the calibration substrate 260A at any radial position along the calibration substrate 260A. In one or more embodiments, the second measurement radiation path 288 intersects the bottom of the calibration substrate 260A at a specific radial position, for example, a radial position directly below the calibration substrate 260A, less than 15 mm from the center of the calibration substrate, for example less than 10 mm from the center of the calibration substrate, for example less than 5 mm from the center of the calibration substrate, or the second measurement radiation path 288 intersects the bottom of the calibration substrate 260A at a radial position directly below the calibration substrate 260A with a radius of about 110 mm to about 130 mm, for example about 115 mm to about 125 mm, for example about 120 mm.

[0043]

[0053] The third window 404 is located within the third opening 405. The third window 404 is located between the energy source 274 and the upper window 105. Thus, the third window 404 is located between the energy source 274 and the calibration substrate 260A. The third window 404 allows energy (e.g., light) emitted by the energy source 274 to pass through it. The energy emitted by the energy source 274 and traveling along the first calibration beam 286 is located between the energy source 274 and the uppermost side of the calibration substrate 260A. The first calibration beam 286 passes through both the upper window 105 and the third window 404. The first calibration beam 286 may intersect the uppermost side of the calibration substrate 260A at any radial position along the calibration substrate 260A. In one or more embodiments, the first calibration beam 286 intersects the uppermost side of the calibration substrate 260A less than 15 mm from the center of the calibration substrate, for example less than 10 mm from the center of the calibration substrate, for example less than 5 mm from the center of the calibration substrate, or the first calibration beam 286 intersects the uppermost side of the calibration substrate 260A with a radius of about 110 mm to about 130 mm, for example about 115 mm to about 125 mm, for example about 120 mm.

[0044]

[0054] The first calibration beam 286 intersects the uppermost side of the calibration substrate 260A within a range of less than 5 mm, e.g., less than 2 mm, e.g., less than 1 mm, from the point where the first measurement radiation path 282 intersects the radiation path. In one or more embodiments, the first calibration beam 286 intersects the uppermost side of the calibration substrate 260A at the same radial position as the first measurement radiation path 282. Measuring the calibration substrate 260A at the same position allows for direct comparison between temperature measurements and can reduce errors when compared with measurements taken at different radial distances from the center of the calibration substrate 260A.

[0045]

[0055] The fourth window 407 is located within the fourth opening 406 formed through the chamber lid 271. The fourth window 407 is located between the band edge detector 276 and the upper window 105. The fourth window 407 is located between the band edge detector 276 and the calibration substrate 260A.

[0046]

[0056] The energy (e.g., light) received by the band-edge detector 276 and traveling along the second calibration beam 284 is positioned between the band-edge detector 276 and the uppermost side of the calibration substrate 260A. The second calibration beam 284 passes through both the upper window 105 and the fourth window 407. The second calibration beam 284 intersects the uppermost side of the calibration substrate 260A at the same position as the first calibration beam 286. The second calibration beam 284 is the reflection of the first calibration beam 286 from the uppermost side of the calibration substrate 260A. The second calibration beam 284 is modified by intersecting the calibration substrate 260A and has a reduced wavelength range that is measured by the band-edge detector 276.

[0047]

[0057] The cover 420 is positioned above the chamber lid 271 and surrounds the upper temperature sensor 272, the energy source 274, and the band edge detector 276. Multiple covers 420 may be positioned individually around each of the upper temperature sensor 272, the energy source 274, and the band edge detector 276, respectively. The cover 420 can function as a support for holding each of the upper temperature sensor 272, the energy source 274, and the band edge detector 276 in place. The cover 420 facilitates reducing or preventing radiant energy from escaping from the processing chamber 101 and interfering with other equipment.

[0048]

[0058] The temperature of a portion of the calibration substrate 260A and / or the inner section 250 is measured using the upper temperature sensor 272. The temperature of a portion of the calibration substrate 260A and / or the inner section 250 is measured using the lower temperature sensor 278 at the bottom surface located on the opposite side from where the temperature is measured by the upper temperature sensor 272.

[0049]

[0059] Figure 5 is a schematic enlarged view of the processing system 100 shown in Figure 1, according to one or more embodiments.

[0050]

[0060] Figure 6 is a schematic top view of the inner section 250 and outer section 130 and one or more calibration substrates 260A to 260E shown in Figure 5, according to one or more embodiments.

[0051]

[0061] In the mounting configurations shown in Figures 5 and 6, the inner section 250 includes a plurality of first support recesses 254 and a plurality of openings 255, and the inner section 250 supports a plurality of calibration substrates 260A to 260E (including an inner calibration substrate 260A and one or more outer calibration substrates 260B to 260E positioned outside the inner calibration substrate 260A along a circumferential pattern).

[0052]

[0062] In one or more embodiments, the first calibration substrate 260A has a first bandgap material, the second calibration substrate 260B has a second bandgap material, the third calibration substrate 260C has a third bandgap material, and the fourth calibration substrate 260D has a fourth bandgap material. In one or more embodiments, the first bandgap material contains doped silicon, which is P+++ silicon or P- silicon.

[0053]

[0063] In one or more embodiments, the second bandgap material comprises indium phosphide (InP), the third bandgap material comprises germanium nitride (GeN), the fourth bandgap material comprises first silicon carbide (SiC) having a first atomic structure, and / or the fifth bandgap material comprises second SiSiC having a second atomic structure. In one or more embodiments, the first atomic structure of the first SiC is 3C, and the second atomic structure of the second SiC is 4H or 6H.

[0054]

[0064] Figure 7 is a partial schematic cross-sectional view of an insite reflectance system (ISR) 185 that can be used with a measurement assembly 270 according to one or more embodiments. The disclosure assumes that other configurations other than a reflectometer may be used with the measurement assembly 270. For example, any other type of optical spectrometer configured to detect (e.g., scan) a band edge range over a temperature range may be used. The ISR system 185 includes an energy source 274, a collimator 215, a band edge detector 276, an upper temperature sensor 272, one or more sensor assemblies 221 (two are shown), and a dichroic mirror 205 connected to or positioned above the chamber lid 271. The ISR system 185 facilitates the measurement of one or more properties of a substrate 50 (and / or a thin film placed thereon). Exemplary properties include temperature, thin film growth rate, thin film thickness, thin film optical properties, and / or intrafilm Ge concentration.

[0055]

[0065] The energy source 274 is configured to generate energy 241 (e.g., radiation such as light). For example, the energy source 274 may be a flash lamp capable of generating full-spectrum or partial-spectrum light. In one or more embodiments, the spectrum of the generated light has wavelengths from about 200 nm to about 4 micrometers, for example, from 200 nm to about 800 nm and / or from 3 micrometers to 4 micrometers. Full-spectrum light enables a wide range of optical signals for analysis, but in one or more embodiments, the light source may be limited to a specific wavelength of light or a specific range of wavelengths of light in order to achieve the analysis. The energy source 274 may be controlled by a controller 175. The energy source 274 communicates optically with a collimator 215 and directs the energy 241 to the collimator 215 in response to commands from the controller 175. Optical communication includes connections via optical fiber cables, and other modes of optical transmission are also assumed. The path of energy transfer from the energy source 274 may be referred to as the propagation path. The collimated energy 243 (e.g., radiation such as light) leaves the collimator 215 and travels through the passage 731. In one or more embodiments, the passage 731 includes a light pipe. The passage 731 may be made of any material capable of transmitting light of a given wavelength, such as sapphire. The passage 731 guides the collimated energy 243 to the surface of the substrate 50 (or a thin film thereon) or the surface of the calibration substrate 260A to facilitate the measurement of one or more properties of the substrate 50 (or a thin film thereon) or one or more properties of the calibration substrate 260A (such as transition wavelengths).

[0056]

[0066] The collimated energy 243 is reflected from the target measurement surface, such as the calibration substrate 260A, and reflected back as reflected energy 227. The reflected energy 227 returns through the passage 731. The reflected energy 227 leaves the passage 731 and travels along the path of the reflected energy 227 to a dichroic mirror 205 aligned with the passage 731. In one or more embodiments, the dichroic mirror 205 includes a transparent material having a dielectric coating. The dielectric coating may include, but is not limited to, magnesium fluoride, tantalum pentoxide, and / or titanium dioxide. The dichroic mirror 205 reflects energy of a specific wavelength (e.g., light) up to the upper temperature sensor 272, while allowing other specifically selected wavelengths to pass through to the collimator 215. The wavelength range directed to the band-edge detector 276 through the collimator 215 may be between approximately 100 nm and approximately 1000 nm, for example, within the range of 200 nm and 800 nm, for example, within the range of 200 nm and 400 nm, for example, within the range of 400 nm and 800 nm. Other wavelengths are also conceivable. The dichroic mirror 205 facilitates the use of multiple light-based sensors by directing a first desired range of light to one sensor (such as the band-edge detector 276) and sending the remaining light wavelengths to at least one other sensor (such as the upper temperature sensor 272). Thus, the use of one or more optical spectrometers and / or ISR systems 185 facilitates a compact measurement system, allowing for the inclusion of more sensors in a smaller footprint. The dichroic mirror 205 is positioned or oriented in a plane approximately perpendicular to the longitudinal axis of the passage 731 at an incident angle A1 between approximately 30° and 60° (for example, within the range of 35° and 55°). However, other incident angles are also conceivable.

[0057]

[0067] As shown in Figure 7, the light reflected from the dichroic mirror 205 is transmitted along the energy path 211 (e.g., optical path) to the upper temperature sensor 272. In one or more embodiments, light wavelengths between approximately 1.0 μm and approximately 6.0 μm, for example, between approximately 3.0 μm and approximately 4.0 μm, travel along the energy path 211 to the upper temperature sensor 207. As described above, the properties of the dichroic mirror 205 are selected to transmit or reflect light in a specific wavelength range. The energy 247 (e.g., light) that can pass through the dichroic mirror 205 is collimated by the collimator 215. The collimated energy 247 is directed to the band-edge detector 276. In one or more embodiments, the band-edge detector 276 includes an optical spectrometer, a spectrometer configured to measure wavelength-resolved intensity. The band-edge detector 276 may include a grating, optical lenses, filters 421, and / or a linear array photodiode detector. Filter 421 can be a short-pass filter that limits noise from a heat source (e.g., heat sources 164A, 164B) or a dielectric filter. The dielectric filter includes any thin-film based filter that can reduce or prevent the passage of light of a particular wavelength. Although filter 421 is described as part of the band-edge detector 276, it is conceivable that the filter may be located elsewhere. For example, filter 421 may be part of the dichroic mirror 205. Filter 421 is configured to allow the passage of light of a particular wavelength while reducing or preventing the passage of other wavelengths. In one or more embodiments, filter 421 allows the passage of light with wavelengths less than 550 nm (while filtering out other wavelengths), reducing optical signal noise from the heat source in the processing chamber and thus improving measurement accuracy. It is conceivable that filter 421 may be placed in any optical path including light reflected from the substrate 50 (e.g., reflected energy 227 to the band-edge detector 276, reflected energy 247 from the dichroic mirror 205, and / or collimated energy 243). In one or more embodiments, the filter 421 is an integrated component of the band edge detector 276.In one or more embodiments, the filter 421 is an independent component from the band-edge detector 276. In one or more embodiments, the filter 421 is not included in the path. One or more embodiments described herein may include the filter 421 and / or the dichroic mirror 205, but it should be noted that both the filter 421 and the mirror 205 are optional and may be excluded from any embodiment or implementation described herein.

[0058]

[0068] The optical spectrometer system and / or ISR system 185 may optionally include one or more second sensor assemblies 221 positioned outside the upper temperature sensor 272. Each sensor assembly 221 is configured to be aligned with the outer passage 219 (e.g., vertically and / or optically aligned). Each sensor assembly 221 is a spectrometer or channel of a multi-channel spectrometer configured to measure characteristics such as transition wavelengths that indicate bandgap edges. The outer passage 219 extends between the bottom and top surfaces of the chamber lid 271. The upper and lower ends of the outer passage 219 may be sealed by a material capable of transmitting energy 229 (e.g., light), such as quartz or sapphire. In one or more embodiments, each outer passage 219 includes an optical fiber cable located above it.

[0059]

[0069] In one or more embodiments, the sensor assembly 221 each comprises an energy source (similar to energy source 274), a collimator (similar to collimator 215), a housing (similar to housing 103), a mirror (similar to dichroic mirror 205), a filter (similar to filter 421), a bandgap detector (similar to band edge detector 276), and / or a temperature sensor (including an upward temperature sensor 272).

[0060]

[0070] In one or more embodiments, the sensor assembly is configured to read the reference material of each calibration substrate 260A-260E for use as a temperature reference. For example, the reference material may have known properties.

[0061]

[0071] For each sensor assembly, the reflected signal returns to the dichroic mirror and is divided into multiple paths (e.g., propagation subpaths). The first propagation subpath directs the reflected light to each temperature sensor 272, while the second propagation subpath directs the reflected light to the collimator 215 and then to the band-edge detector 276. The light intensity collected by the band-edge detector 276 is analyzed for true reflectance, which is compared to a model (e.g., Fresnel equation) using a nonlinear fitting equation or other empirically derived equation to determine the adjusted temperature reading of the temperature sensor 272.

[0062]

[0072] In one or more embodiments, the model is empirically derived by acquiring absorption / reflection data of light at a given wavelength for various materials of various calibration substrates. The data may be collected under conditions that approximate the conditions of a given recipe for processing future substrates, such as the process recipe in which the model is used. The data is then fitted into equations, such as nonlinear equations. The light received by the band-edge detector 276 is analyzed for intensity (e.g., the true reflectance of the light reflected from the measured calibration substrate) and fitted into empirically derived equations to determine the adjusted temperature reading. In other words, the amount of light reflected from the surface of the calibration substrate varies depending on the material of the calibration substrate, and the amount of light can be compared with known data to determine the adjusted temperature reading. This data and / or equations may also take into account other optical properties, such as refractive index and / or extinction coefficient, to facilitate measurement accuracy.

[0063]

[0073] The band edge detector 276 can measure the band edge wavelength of the inner calibration substrate 260A shown in Figure 6, the band edge detector of the left sensor assembly 221 can measure the band edge wavelength of the outer calibration substrate 260C shown in Figure 6, and the band edge detector of the right sensor assembly 221 can measure the band edge wavelength of the outer calibration substrate 260D shown in Figure 6. The inner section 250 and the outer section 131 can be stepped in rotational steps to align the outer calibration substrates 260B and 260E below the sensor assembly 221 so that the temperature sensor can be calibrated by measuring the band edge wavelengths of the outer calibration substrates 260B and 260E. This disclosure is intended to allow multiple band edge wavelength measurements (across the same calibration substrate or various calibration substrates) to be averaged with respect to an adjusted temperature (e.g., a correction value) applied to temperature measurements obtained using the temperature sensor.

[0064]

[0074] This disclosure envisions calibrating a temperature sensor (such as a multi-channel temperature sensor) that measures energy (e.g., light) at multiple different wavelengths (e.g., 1.5 microns, 2.7 microns, 3.4 microns, and 5.0 microns) using multiple calibration substrates having different bandgap materials. In one or more embodiments, the number of calibration substrates and the number of different bandgap materials used for the calibration substrates are equal to the number of different wavelengths used for the temperature sensor.

[0065]

[0075] Figure 8 is a schematic flowchart of Method 800 using the measuring assembly 270 of Figure 1, according to one or more embodiments. Method 800 includes a first step 802, a second step 804, a third step 806, a fourth step 808, a fifth step 810, an optional sixth step 812, and an optional seventh step 814. In one or more embodiments, steps 802, 804, 806, 808, 810, 812, and 814 are performed sequentially as shown in Figure 8 and described herein.

[0066]

[0076] Method 800 includes a first step 802 of transferring one or more calibration boards (e.g., one or more calibration boards 260A to 260E) from a cassette. One or more of the calibration boards 260A to 260E may be stored in the cassette during the calibration of each of the temperature sensors 272, 278.

[0067]

[0077] During the second step 804, the transfer robot transfers one or more calibration substrates into a processing chamber, such as the processing chamber 101. The one or more calibration substrates are supported, for example, by an inner section 250 carried by the transfer robot. The inner section 250 is placed on the outer section 131, and the transfer robot is pulled out of the processing chamber 101.

[0068]

[0078] During the third step 806, a calibration process is performed. The calibration process involves using one or more calibration boards and one or more measurement assemblies 270 (e.g., one, at least two, or all of them). The calibration process of the third step 806 will be described in more detail with reference to method 900 for calibrating the temperature sensor.

[0069]

[0079] After the third step 806, the temperature calibration process is stopped in the fourth step 808. Stopping the temperature calibration process includes stopping the flow of any processing gas introduced into the processing chamber (if used), stopping any heating of the calibration substrate, and stopping the measurement of one or more temperatures of the calibration substrate.

[0070]

[0080] After the temperature calibration process has stopped, in the fifth step 810, one or more calibration boards are removed from the processing chamber. The calibration boards are removed by a transfer robot via a loading port. After being removed from the processing chamber 101, one or more calibration boards are inserted back into the cassette.

[0071]

[0081] After removing one or more calibration substrates from the processing chamber, a semiconductor substrate may be transferred into the processing chamber during an optional sixth step 812. The semiconductor substrate may be similar to substrate 50 (Figure 1). The semiconductor substrate may have partially formed semiconductor devices placed thereon. The semiconductor substrate may be transferred into the processing chamber by a transfer robot and may be housed in a cassette during the temperature calibration process, or in a separate processing chamber.

[0072]

[0082] A substrate processing step is performed during an optional sixth step 814, following an optional sixth step 812 in which the semiconductor substrate is transferred into the processing chamber. The substrate processing step may include a deposition process on the top surface of the substrate. The substrate processing step may further include heating the substrate, introducing at least one processing gas, introducing a purge gas, and exhausting the processing gas and purge gas. Multiple substrates may be processed during the substrate processing step.

[0073]

[0083] Optional sixth and seventh steps 812, 814 may be repeated so that multiple substrates are processed between each calibration process. By repeating the optional sixth and seventh steps 812, 814, more than 50 substrates can be processed in the processing chamber between each calibration process. In one or more embodiments, the calibration process is performed once every few days, and several hundred substrates are processed in the processing chamber between each calibration process. The sixth and seventh steps 812 and 814 are optional. In one or more embodiments, the sixth and seventh steps 812 and 814 are omitted from method 800.

[0074]

[0084] Method 800 is automatically repeated after a predetermined amount of substrates have been processed in the processing chamber, or after the processing chamber has reached a predetermined execution time. Method 800 is automated and programmed into a controller such as controller 175. Method 800 may not require human intervention and can be completed without disassembling the processing chamber. Calibration of a temperature sensor using Method 800 may have minimal system downtime by pausing the processing process for the length of time it takes to perform steps 804, 806, 808, and 810, and then resuming the processing process after that length of time has elapsed.

[0075]

[0085] Figure 9 is a schematic diagram of a method 900 for calibrating a temperature sensor, such as the temperature sensors 272 and 278 of Figure 1, according to one or more embodiments. Method 900 may be part of a third step 806 of Method 800 as specified herein. Calibrating the temperature sensor includes a first step 902, a second step 904, a third step 906, a fourth step 908, and a fifth step 910. Steps 902, 904, 906, 908, and 910 described with respect to Method 900 may be subsequently performed as shown in Figure 9 and described herein. Other sequences are also possible. For example, steps 904 and / or 906 may be performed after or concurrently with step 908.

[0076]

[0086] The first step 902 includes performing a calibration process. The calibration process may be similar to the substrate processing process 814 performed on the substrate. The calibration process may include heating one or more of the one or more calibration substrates (e.g., one or more, at least two, or each of them), introducing a process gas, introducing a purge gas, and exhausting the process gas and purge gas. The process gas may be different from the process gas used in the substrate processing process of the seventh step 814 of Method 800. The process gas may be a carrier gas such as H2 gas. The carrier gas supports processing conditions that match the processing conditions found in the substrate processing process 814 (which is optional for Method 800). The carrier gas supports pressure and gas flow matching that may be found during the substrate processing process 814. The process gas does not have to include reaction gases or deposition / etching gases that may alter the surface of one or more of the one or more calibration substrates. The processing chamber and calibration substrate may be heated using heat sources 164A, 164B and / or susceptor heaters. The heating of the processing chamber and one or more calibration substrates is carried out gradually, and the temperature rises over time.

[0077]

[0087] The second step 904 includes measuring the absorption wavelength (e.g., band-edge absorption wavelength) of one or more (e.g., one, at least two, or each) of the calibration substrate using a band-edge detector 276 (Figures 1 and 4). During the second step 904, the first calibration beam 286 is emitted by an energy source 274 or one of the heat sources 164A, 164B. When the first calibration beam 286 strikes the uppermost side of the calibration substrate at a first position, a first wavelength range of the first calibration beam 286 is absorbed by the calibration substrate, and a second wavelength range of the first calibration beam 286 is reflected as the second calibration beam 284. The second calibration beam 284 enters the band-edge detector 276. The band-edge detector 276 measures the intensity of various wavelengths in the wavelength spectrum of the second calibration beam 284. The band-edge detector 276 maps the intensity of wavelength measurements over the wavelength range measured by the band-edge detector 276. A broadband light source (such as energy source 274) or one or more heat sources 164A, 164B are used to form the first calibration beam 286. Energy source 274 may be used to improve the accuracy of the measurement. Energy source 274 can emit wavelengths in a precise range with set intensity and direction. This makes energy source 274 highly adjustable and provides improved measurement accuracy. Heat sources 164A, 164B may be used to reduce the number of components placed on the lid of the processing chamber. Heat sources 164A, 164B emit light in a range that may be similar to the range emitted by energy source 274. Heat sources 164A, 164B have controlled intensity. Heat sources 164A, 164B may be used to emit light that is absorbed and reflected by the calibration substrate(s).

[0078]

[0088] In one or more embodiments, radiation is transmitted through one or more calibration substrates and measured by a band-edge detector 276 on the opposite side of one or more calibration substrates from the heat sources 164A, 164B. This may occur if the outer section 131 and / or inner section 250 are transparent to light emitted by the light source at wavelengths detected by the band-edge detector 276, or if the inner section 250 and / or outer section 131 emit radiation after heating.

[0079]

[0089] The band-edge detector 276 can measure the intensity of light at wavelengths between approximately 250 nanometers (nm) and approximately 1350 nm, for example, from approximately 300 nm to approximately 1300 nm. The energy source (either energy source 274 or heat sources 164A or 164B) can emit light at wavelengths between approximately 250 nm and approximately 1350 nm, for example, from approximately 300 nm to approximately 1300 nm. Other wavelengths are also possible.

[0080]

[0090] Figure 10 shows the measurement of wavelength intensity 1008 over a range of wavelengths 1006 according to one or more embodiments.

[0081]

[0091] An illustrative map of wavelength measurement intensity is shown in Figure 10. The wavelength range 1006 measured by the band-edge detector 276 may be the same wavelength range as the first calibration beam 286 from the energy source 274. The wavelength intensity 1008 across the wavelength range 1006 is mapped to form the intensity curve 1002. The intensity curve 1002 shows a sharp transition between the wavelength range absorbed by each calibration substrate, the wavelength range with low or near-zero measured intensity, and the wavelength range reflected by the calibration substrate, where the wavelength range has a high or near-1 measured intensity. The intensity is measured as part of the intensity of the wavelength emitted by the energy source 274. The absorption edge wavelength is located at the midpoint 1004 of the transition between the low and high measured intensities of the wavelength range. The absorption edge wavelength is the wavelength at which the wavelength transitions from being absorbed to being reflected by the material. The absorption edge wavelength is directly correlated with the band gap of the material, which depends on the temperature of the material. As the temperature inside an object such as the calibration substrate 260A changes, the band gap, and consequently the absorption edge wavelength, also changes. Therefore, by measuring the absorption edge wavelength, the temperature of the material can be measured (for example, the temperature reading can be adjusted).

[0082]

[0092] Returning to Figure 9, in the third step 906, the band edge detector 276 determines the temperature of one or more (e.g., one, at least two, or each) calibration substrates based on the absorption edge wavelength found in the second step 904.

[0083]

[0093] Figure 11 shows a correlated temperature graph 1110 according to one or more embodiments. Graphs such as the correlated temperature graph 1100 shown in Figure 11 are used to equip absorption edge wavelengths with temperature. The correlation curve 1102 of the correlated temperature graph 1100 can be found experimentally, allowing temperature 1106 to be correlated with measured absorption edge wavelengths 1104. The temperature determined by the band edge detector 276 using the absorption edge wavelength is beneficial in that the determined temperature can account for inaccuracies due to aging of any components of the processing chamber, such as the processing chamber 101. The absorption edge wavelength depends on the temperature and material of each calibration substrate, and is relatively unaffected by the state of the components of the processing chamber. Therefore, since the same calibration substrate is used and stored between each calibration process, accurate and repeatable calibration temperatures can be performed using the measurement assembly 270 and the band edge detector 276. The calibration temperature is the temperature measured (e.g., calibrated) by the band edge detector 276. In one or more embodiments, the calibration temperature is the actual temperature used for reference to calibrate (e.g., adjust) the temperature measured using a temperature sensor (e.g., the first temperature sensor 272 and the second temperature sensor 278 described herein).

[0084]

[0094] In the fourth step 908, the temperature of one or more calibration substrates (e.g., one, at least two, or each) is determined (e.g., using the first and second temperature sensors 272, 278 described herein). The temperatures of the first and second temperature sensors are determined by measuring the radiation emitted by the calibration substrates 260A-260E. In one or more embodiments, the temperature sensors are pyrometers. The temperature measured by the first temperature sensor is the first temperature, or the first measured temperature. The temperature measured by the second temperature sensor is the second temperature, or the second measured temperature. The areas of the calibration substrates 260A-260E measured by the first and second temperature sensors are within about 5 mm of the radial position of the area measured by the band edge detector. In one or more embodiments, each of the first non-contact temperature sensor and the second non-contact temperature sensor measures an area having the same radius as the area measured by the band edge detector. In one or more embodiments, the area is called the measurement point.

[0085]

[0095] In one or more embodiments, the second step 904 and the fourth step 908 are performed simultaneously to ensure that the measured temperatures are equal. In one or more embodiments, the first step 902, the second step 904, the third step 906, and the fourth step 908 are all performed simultaneously.

[0086]

[0096] Over time, the temperature readings of the first and second temperature sensors drift due to aging and wear of the components of the processing chamber. The temperature readings of the non-contact temperature sensors can be calibrated periodically. In the fifth step 910, the temperature sensors are calibrated using a calibration temperature(s) determined by the band-edge detector. The temperature sensors can be adjusted to a temperature that matches or is close to (e.g., within a given precision) the calibration temperature measured by the band-edge detector. Using the adjusted temperature, a correction factor can be applied to subsequent temperature readings obtained using the temperature sensors (e.g., during epitaxial deposition).

[0087]

[0097] In one or more embodiments, the method 900 for calibrating the temperature sensors described herein is performed multiple times at various temperatures so that the first non-contact temperature sensor and the second non-contact temperature sensor can be calibrated over a wide range of temperatures. In one or more embodiments, the adjustment algorithm can determine the optimal calibration amount for the temperature sensors after the method 900 has been repeated over a range of calibration substrate temperatures and / or a range of multiple calibration substrates (e.g., multiple calibration substrates 260A to 260E). The temperature sensors may be calibrated by adjusting each measurement by the same amount, or the temperature sensors may be adjusted on a curve determined by the controller 175.

[0088]

[0098] Embodiments disclosed herein relate to the calibration of temperature sensors in heat treatment chambers, such as epitaxial processing chambers, using band-edge detectors and absorption edge wavelengths(s). One or more calibration substrates are used to facilitate accurate and more consistent calibration results and to provide the absorption edge wavelengths expected in the material on which the calibration substrate is formed.

[0089]

[0099] The advantages of this disclosure include accurate adjustment and calibration of temperature measurements, temperature measurements that take into account the aging and wear of chamber components, easier cleaning of chamber components, and easier transport of calibration substrates.

[0090]

[0100] It is assumed that one or more embodiments disclosed herein may be combined. For example, one or more (e.g., one, at least two, or all) of the processing system 100, processing chamber 101, controller 175, measurement assembly 270, inner section 250, outer section 131, calibration substrates 260A-260E, method 800, method 900, profile of Figure 10, and / or profile of Figure 111111 may be combined. Furthermore, it is assumed that one or more embodiments disclosed herein may include some or all of the aforementioned advantages.

[0091]

[0101] The above applies to embodiments of the present disclosure, but other embodiments and further embodiments of the present disclosure can be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the following claims.

Claims

1. A measuring system for measuring temperature applicable to semiconductor manufacturing, A substrate support assembly, Inner division, The first side, The second surface opposite to the first surface, One or more first support recesses formed on the first surface, One or more openings extending between the one or more first support recesses and the second surface, The inner section includes, An outer section configured to support the outer region of the inner section, A substrate support assembly, One or more calibration substrates, which are sized and molded to be at least partially positioned within the one or more first support recesses, A band edge calibration assembly, An energy source positioned to release a first energy, A band edge detector is positioned adjacent to the energy source and to receive the first energy, A band edge calibration assembly, A measurement system including this.

2. The measurement system according to claim 1, wherein the one or more calibration substrates include a plurality of calibration substrates, and at least two of the calibration substrates have different bandgap materials.

3. A measurement system, The one or more calibration boards include a plurality of calibration boards, The plurality of calibration boards, An inner calibration substrate having a first bandgap material, A plurality of outer calibration substrates positioned outside the inner calibration substrate along a circumferential pattern, A second calibration substrate having a second bandgap material and A third calibration substrate having a third bandgap material, A fourth calibration substrate having a fourth bandgap material, A fifth calibration substrate having a fifth bandgap material, including, Multiple external calibration substrates, including, The measurement system according to claim 1.

4. The measurement system according to claim 3, wherein the first bandgap material comprises doped silicon.

5. The measurement system according to claim 4, wherein the doped silicon is P+++ silicon or P- silicon.

6. The second bandgap material includes InP, The third bandgap material contains GeN, The fourth bandgap material comprises a first silicon carbide (SiC) having a first atomic structure, The fifth bandgap material includes a second SiC having a second atomic structure, The measurement system according to claim 5.

7. The measurement system according to claim 6, wherein the first atomic structure of the first SiC is 3C, and the second atomic structure of the second SiC is 4H or 6H.

8. The measurement system according to claim 1, wherein the first energy is light, and the light is reflected from at least one of the one or more calibration substrates before it is received by the band edge detector.

9. The one or more calibration boards include a plurality of calibration boards, and the measurement system is A first temperature sensor is positioned adjacent to the band edge calibration assembly and to receive a second energy, A controller wherein at least two of the plurality of calibration boards, The light is emitted towards each calibration substrate, The band edge absorption wavelength is determined from the light reflected from each of the calibration substrates and received by the band edge detector, The calibration temperature is determined using the determined band edge absorption wavelength, Based on the second energy received by the first temperature sensor, the first measured temperature is determined, The first temperature sensor is calibrated by comparing the first measured temperature with the calibration temperature. A controller configured to perform the following: The measurement system according to claim 8, including the following:

10. The calibration assembly according to claim 9, wherein the first temperature sensor is a pyrometer, and the second energy received by the first temperature sensor is radiation.

11. The measurement system according to claim 9, further comprising a second temperature sensor located on the opposite side of the plurality of calibration substrates from the band edge calibration assembly and the first temperature sensor.

12. The band edge calibration assembly is A collimator that communicates optically with the energy source along the first energy propagation path, A dichroic mirror arranged along the propagation path between the collimator and the optical path, comprising a spectrometer in which a first temperature sensor optically communicates with the dichroic mirror along a first propagation subpath downstream of the dichroic mirror, and a band edge detector optically communicates with the dichroic mirror along a second propagation subpath downstream of the dichroic mirror, A filter is arranged along the propagation path between the energy source and the spectrometer, The measurement system according to claim 9, further comprising:

13. A system for processing substrates applicable to semiconductor manufacturing, A chamber body comprising one or more side walls, wherein the one or more side walls define at least partially the internal space, Lid and, Window and One or more heat sources configured to heat the internal space, A substrate support assembly disposed within the internal space, Inner division, The first side, The second surface opposite to the first surface, A plurality of first support recesses formed on the first surface, A plurality of openings extending between the plurality of first support recesses and the second surface, The inner section including, An outer section configured to support the outer region of the inner section, A substrate support assembly, A band edge calibration assembly, An energy source positioned to release a first energy, A band edge detector is positioned adjacent to the energy source and to receive the first energy, A band edge calibration assembly, A system that includes this.

14. The system according to claim 13, further comprising a plurality of calibration substrates at least partially positioned within a plurality of first support recesses, wherein at least two of the calibration substrates are made of different bandgap materials.

15. A first temperature sensor is positioned adjacent to the band edge calibration assembly and to receive a second energy, A controller wherein at least two of the plurality of calibration boards, The first energy is released toward each calibration substrate, The band edge absorption wavelength is determined from the first energy reflected from each of the calibration substrates and received by the band edge detector, The calibration temperature is determined using the determined band edge absorption wavelength, Based on the second energy received by the first temperature sensor, the first measured temperature is determined, The first temperature sensor is calibrated by comparing the first measured temperature with the calibration temperature. A controller configured to perform the following: The system according to claim 14, further comprising:

16. A method for calibrating measured values ​​applicable to semiconductor manufacturing, The process involves transferring multiple calibration boards into a processing chamber, wherein the multiple calibration boards are supported on a board support portion. Using an energy source to irradiate the plurality of calibration substrates, Using a band-edge detector, we measure multiple band-edge absorption wavelengths, Measuring multiple temperatures of the calibration substrate using one or more temperature sensors, Using the aforementioned band-edge absorption wavelengths, a plurality of calibration temperatures of the calibration substrate are determined. The one or more temperature sensors are calibrated by comparing the multiple temperatures of the calibration substrate with the multiple calibration temperatures of the calibration substrate. Transferring the calibration substrate supported by the substrate support portion to the outside of the processing chamber, Methods that include...

17. The process further includes performing a substrate processing step before the irradiation, wherein the substrate processing step is Heating the calibration substrate using multiple heat sources, Introducing a processing gas into the processing chamber, The method according to claim 16, including the method described in claim 16.

18. The method according to claim 16, wherein measuring the band edge absorption wavelength includes measuring the intensity of various wavelengths in the wavelength spectrum of a calibration light beam incident on each of the plurality of calibration substrates.

19. The method according to claim 16, wherein the calibration substrate is stored in a cassette before being transferred into the processing chamber and after being transferred out of the processing chamber.

20. The method according to claim 19, wherein, after the calibration substrate is transferred outside the processing chamber, a plurality of substrates are processed within the processing chamber.

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