Laser dicing for droplet control
The single-pass stealth laser dicing and back-grinding method addresses droplet damage in wafer dicing, ensuring efficient and simplified semiconductor manufacturing by controlling crack propagation for die separation.
JP2026517728APending Publication Date: 2026-06-02TEXAS INSTRUMENTS INC
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- TEXAS INSTRUMENTS INC
- Filing Date
- 2024-04-26
- Publication Date
- 2026-06-02
Smart Images
Figure 2026517728000001_ABST
Abstract
An exemplary method (100) includes directing a laser beam to entry points along each of its scribe streets on the surface of a first side of a semiconductor substrate (102). The substrate comprises a plurality of dies, the plurality of dies having circuit elements on the surface of the first side and separated from each other by their respective scribe streets. The laser beam is focused within the substrate to form a modified region and a crack extending from the modified region toward at least one of the surfaces of the first and second sides. The modified region is closer to the surface of the first side than to the surface of the second side opposite to the surface of the first side. The method (100) also includes applying tape to the surface of the first side after directing the laser beam (104) and back grinding (106) to reduce the thickness of the substrate from the surface of the second side and provide a thinned surface of the second side intersecting the crack extension.
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