Conoscopy wafer orientation for ion implantation

Abstract

An ion implanter may include an ion source for generating an ion beam. The ion implanter may also include a set of beamline components for directing the ion beam along the beam axis to a substrate, and a processing chamber for housing the substrate to receive the ion beam. The ion implanter may also include a conoscopy system comprising an illumination source for guiding light to a substrate position, a first polarizer having a first polarization axis positioned between the illumination source and the substrate position, and a second polarizer positioned to receive the light after it has passed the substrate position. The conoscopy system may also include a lens for receiving the light after it has passed the substrate position and a detector for detecting the light after it has passed the lens.

Claims

1. An ion implantation apparatus, wherein the ion implantation apparatus, An ion source for generating an ion beam, A set of beamline components for directing the ion beam along the beam axis toward the substrate, A processing chamber for housing the substrate to receive the ion beam, The conoscopy system placed within the ion implanter and The Conoscopy system is equipped with, An illumination source for directing light towards the substrate position, A first polarizer having a first polarization axis and positioned between the irradiation source and the substrate position, A second polarizer is positioned to receive the light after it has passed through the substrate position, A lens arranged to receive the light after it has passed through the substrate position, A detector for detecting the light after it has passed through the lens, An ion implantation device equipped with the following features.

2. The ion implantation apparatus according to claim 1, wherein the conoscopy system further comprises a substrate stage for holding the substrate in the substrate position, the main plane of the substrate defines a reference plane in a non-tilting configuration, includes at least a tilting component for rotating the substrate, and the main plane of the substrate defines a non-zero angle with respect to the reference plane.

3. The ion implantation apparatus according to claim 2, wherein the synchrotron radiation forms a symmetrical pattern in the detector when the non-zero angle defines an offset angle at which the c-axis of the substrate is aligned along the normal to the reference plane.

4. The ion implantation apparatus according to claim 3, wherein when the substrate stage is tilted at the offset angle, the substrate indicates a channeling orientation with respect to the ion beam.

5. The ion implantation apparatus according to claim 3, wherein the detector is configured to determine the value of the offset angle to be within 0.1 degrees.

6. The conoscopy system is located outside the processing chamber of the ion implantation apparatus. The processing chamber further comprises a substrate holder having a rotating component for rotating the substrate within the processing chamber, wherein the main plane of the substrate is inclined at the offset angle. The ion implantation apparatus according to claim 3, wherein the ion beam collides with the substrate along a beam trajectory that defines an angle of incidence with respect to the normal of the substrate to the main plane equal to the offset angle when the substrate stage is tilted at the offset angle.

7. The ion implantation apparatus according to claim 3, wherein the substrate stage of the conoscopy system is placed in the processing chamber of the ion implantation apparatus, and the ion beam collides with the substrate along a beam trajectory that defines an angle of incidence with respect to the normal of the substrate to the main plane equal to the offset angle when the substrate stage is tilted at the offset angle.

8. The ion implantation apparatus according to claim 1, wherein the substrate is 4H-SiC.

9. The ion implantation apparatus according to claim 1, wherein the light includes synchrotron radiation having wavelengths between 375 nm and 450 nm.

10. The ion implantation apparatus according to claim 1, wherein the detector is a solid-state detector.

11. A method for injecting a substrate, Generating an ion beam in an ion implanter, Directing the ion beam towards the substrate along the beam trajectory, Using the conoscopy system in the ion implantation apparatus, the offset angle for the substrate is determined, When the ion beam collides with the substrate, the substrate is tilted at the offset angle. A method that includes this.

12. The aforementioned Conoscopy system, An illumination source for directing light towards the substrate position, A first polarizer having a first polarization axis and positioned between the irradiation source and the substrate position, A second polarizer is positioned to receive the light after it has passed through the substrate position, A lens arranged to receive the light after it has passed through the substrate position, A detector for detecting the light after it has passed through the lens, The method according to claim 11, comprising:

13. The method according to claim 12, wherein the irradiation passes through the substrate when the substrate is positioned at the substrate position.

14. The method according to claim 12, wherein the synchrotron radiation forms a symmetrical pattern in the detector when the c-axis of the substrate is at the offset angle such that it is aligned along the beam trajectory.

15. The method according to claim 14, wherein when the substrate is tilted at the offset angle, the substrate exhibits a channeling orientation with respect to the ion beam.

16. The method according to claim 14, wherein the detector is configured to determine the value of the offset angle to be within 0.1 degrees.

17. The ion beam collides with the substrate within the processing chamber, the conoscopy system is positioned outside the processing chamber, and the method is Transferring the substrate from the conoscopy system to the substrate holder within the processing chamber, The main plane of the substrate is inclined at the offset angle, and the substrate is rotated on the substrate holder. It further includes, The method according to claim 12, wherein the ion beam collides with the substrate along a beam trajectory that defines an incident angle with respect to the normal of the substrate to the main plane, which is equal to the offset angle.

18. The method according to claim 12, wherein the substrate stage of the conoscopy system is placed in the processing chamber of the ion implantation apparatus, and the ion beam collides with the substrate along a beam trajectory that defines an angle of incidence with respect to the normal to the main plane of the substrate equal to the offset angle when the substrate is tilted at the offset angle.

19. The method according to claim 11, wherein the substrate is 4H-SiC.

20. The method according to claim 11, wherein the light includes synchrotron radiation having wavelengths between 375 nm and 450 nm.

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