Substrate processing equipment

Abstract

A substrate processing apparatus according to one aspect of the present invention includes a process chamber having a reaction space formed inside; a chamber lid covering the upper part of the process chamber; a substrate support portion disposed within the process chamber to support at least one substrate; a plasma source assembly including a first plasma source having a first toroidal channel having a first radius; a second plasma source having a second toroidal channel; and an insulating member; and a gas injection portion facing the substrate support portion and formed at the lower part of the plasma source assembly, with a gas injection plate formed thereon for injecting a process gas activated by the plasma source assembly onto the substrate support portion.

Description

Technical Field

[0001] The present invention relates to the manufacture of semiconductors, and more particularly to a substrate processing apparatus using a plasma source.

Background Art

[0002] In a substrate processing apparatus for forming semiconductor elements, a device and a process are being studied in which, instead of directly forming plasma in a process chamber, activated reactants, such as radicals, are supplied into the process chamber using a plasma source outside the process chamber, for example, a remote plasma generator, and substrate processing is performed. When using such a remote plasma generator, desired reactants can be generated and supplied to the process chamber, and since plasma is not directly formed in the process chamber, it is possible to prevent plasma damage from occurring on the substrate.

[0003] Furthermore, in order to shorten the path through which radicals generated by a remote plasma generator are supplied onto the substrate, a structure in which a plasma source is coupled to a gas injection portion of a process chamber is being studied. According to such a structure, the process efficiency can be increased by increasing the activation ratio of the radicals supplied from the plasma source onto the substrate.

[0004] However, in the case where the remote plasma generator or plasma source described above does not supply radicals uniformly to the central portion and the edge region of the substrate on a circular substrate, there arises a problem that the uniformity of the thin film deposited on the upper portion of the substrate decreases.

Summary of the Invention

Problems to be Solved by the Invention

[0005] The present invention is for solving the above-described problems, and an object thereof is to provide a substrate processing apparatus capable of uniformly supplying radicals supplied to the upper portion of a substrate to the entire region of the substrate or supplying them differently for each region of the substrate to adjust the thickness of a thin film. However, such problems are exemplary and do not limit the scope of the present invention thereby. [Means for solving the problem]

[0006] A substrate processing apparatus according to one aspect of the present invention, for solving one of the technical problems of the present invention described above, comprises: a process chamber having a reaction space formed inside; a chamber lid covering the upper part of the process chamber; a substrate support portion disposed in the process chamber to support at least one substrate; a first plasma source coupled to the chamber lid and having a first toroidal channel having a first radius from the center of the chamber lid, for supplying activated process gas to the reaction space; a second plasma source having a second toroidal channel having a smaller radius than the first plasma source; and the first plasma source and the second plasma source The plasma source assembly includes an insulating member provided between the plasma source and the chamber lid, and a gas injection unit formed at the lower part of the plasma source assembly, facing the substrate support, and having a gas injection plate formed thereon for injecting process gas activated by the plasma source assembly onto the substrate support, wherein the first plasma source is provided with a first opening through which the process gas activated by the first plasma source is discharged, and the second plasma source includes a second opening through which the process gas activated by the second plasma source is discharged, and the heights of the first opening and the second opening are different from each other.

[0007] A substrate processing apparatus according to one aspect of the present invention, for solving one of the technical problems described above, comprises: a process chamber having a reaction space formed inside; a chamber lid covering the upper part of the process chamber; a substrate support portion disposed within the process chamber to support at least one substrate; a first plasma source having a first toroidal channel having a first radius from the center of the chamber lid to supply activated process gas to the reaction space; a second plasma source having a second toroidal channel having a smaller second radius than the first plasma source; and a gas exhaust port coupled to the chamber lid, which discharges the activated process gas through the first and second plasma sources. The plasma source assembly includes a discharge plate and an insulating member provided between the first plasma source and the second plasma source and the gas discharge plate; and a gas injection unit facing the substrate support and formed at the lower part of the plasma source assembly, the gas injection unit having a gas injection plate formed thereon for injecting process gas activated by the plasma source assembly onto the substrate support, wherein the first plasma source is provided with a first opening through which the process gas activated by the first plasma source is discharged, and the second plasma source includes a second opening through which the process gas activated by the second plasma source is discharged, and the heights of the first opening and the second opening are different from each other.

[0008] According to the substrate processing apparatus, the first plasma source includes a first reaction body in which the plurality of first body portions are arranged such that the plurality of first gas diffusion spaces are formed inside each of the first body portions, and the plurality of first insulating portions are coupled between the plurality of first body portions, and the plurality of first body portions are arranged such that the plurality of first gas diffusion spaces form the first toroidal channel as a whole; a plurality of first magnetic cores are arranged to surround the first reaction body and to be spaced apart from each other along the first toroidal channel; and a plurality of first windings are arranged to surround the plurality of first magnetic cores and are supplied with power from a power supply to induce magnetic force in the plurality of first magnetic cores, and the insulating member may include a plurality of first insulating members coupled to at least one surface of the first reaction body.

[0009] According to the substrate processing apparatus, the first reaction body may include a plurality of first-first body portions forming at least a portion of the first toroidal channel, a plurality of first-second body portions forming on the sides of the plurality of first-first body portions and to which the plurality of first insulating portions are coupled to the outside, a plurality of first gas inlets formed by penetrating at least a portion of the plurality of first-first body portions so that process gas supplied from the outside flows into the plurality of first gas diffusion spaces, and a plurality of first openings formed in at least a portion of the plurality of first-first body portions for discharging the activated process gas from the first reaction body.

[0010] According to the substrate processing apparatus, the second plasma source includes a second body portion formed inside the first reaction body and having a second gas diffusion space formed inside, and a second insulating portion coupled to the second body portion, wherein the second reaction body portion is arranged such that the second gas diffusion space as a whole forms the second toroidal channel; a second magnetic core arranged in a part of the second toroidal channel while surrounding the second reaction body; and a second winding arranged to surround the second magnetic core and supplied with power from the power supply to induce a magnetic force in the second magnetic core, wherein the insulating member may include a second insulating member coupled to at least one surface of the second reaction body.

[0011] According to the substrate processing apparatus, the second reaction body may include a second-first body portion that forms part of the second toroidal channel, a second-second body portion that is part of the second toroidal channel and is formed to be connected to the second-first body portion and to which the second insulating portion is coupled externally, at least one second gas inlet formed by penetrating at least a part of the second-first body portion so that the process gas flows into the second gas diffusion space, and at least one second opening formed in at least a part of the second-first body portion for discharging the activated process gas from the second reaction body.

[0012] According to the substrate processing apparatus, the gas discharge plate may have a plurality of discharge ports formed at positions corresponding to a first opening for discharging the process gas activated by the first plasma source from the first plasma source, and a second opening for discharging the process gas activated by the second plasma source from the second plasma source.

[0013] According to the substrate processing apparatus, the gas discharge plate includes a plurality of first gas outlets formed at a first height to supply process gas activated by the first plasma source to the gas injection unit, and at least one second gas outlet formed at a second height higher than the first height to supply process gas activated by the second plasma source to the gas injection unit, wherein the plurality of first gas outlets and the at least one second gas outlet may be formed with a step.

[0014] The substrate processing apparatus described above is characterized in that each of the first gas outlet and the second gas outlet is formed in the form of multiple holes.

[0015] According to the substrate processing apparatus, the plurality of first gas outlets are formed in the lower part of the gas outlet plate of the first height so that activated process gas is supplied to the upper part of the gas injection unit, and at least one second gas outlet may be formed in the upper part of the gas outlet plate of the second height so that activated process gas is supplied to the upper part of the gas injection unit.

[0016] According to the substrate processing apparatus, the plurality of first gas outlets are formed on the side of the first height gas outlet plate so that activated process gas is supplied to the upper side of the gas injection unit, and at least one second gas outlet may be formed on the upper part of the second height gas outlet plate so that activated process gas is supplied to the upper side of the gas injection unit. [Effects of the Invention]

[0017] According to some embodiments of the present invention described above, the substrate processing apparatus can shorten the migration path of the activated radicals by directly supplying the activated radicals from the top of the gas injection unit to the substrate, and the supply of activated radicals to the substrate can be adjusted by arranging the plasma source at different positions for different regions of the substrate.

[0018] In addition, it is possible to provide a substrate processing apparatus capable of adjusting the thickness of a thin film by supplying radicals supplied to the upper part of the substrate uniformly to the entire area of the substrate or supplying them differently for each area of the substrate. Of course, the scope of the present invention is not limited by such an effect.

Brief Description of the Drawings

[0019] [Figure 1] It is a schematic diagram showing a substrate processing apparatus according to an embodiment of the present invention. [Figure 2] It is a schematic diagram showing a substrate processing apparatus according to another embodiment of the present invention. [Figure 3] It is a schematic top view showing a plasma source assembly according to an embodiment of the present invention. [Figure 4] It is a schematic cutaway perspective view showing the plasma source assemblies of FIGS. 1 and 2. [Figure 5] It is a perspective view showing a first plasma source according to an embodiment of the present invention. [Figure 6] It is a perspective view showing a second plasma source according to an embodiment of the present invention. [Figure 7] It is a top view showing a gas discharge plate according to an embodiment of the present invention. [Figure 8] It is a schematic diagram showing the power transmission of a first plasma source according to an embodiment of the present invention. [Figure 9] It is a cross-sectional view showing the positions and directions of the discharge ports of the first plasma source and the second plasma source according to various embodiments of the present invention. [Figure 10] It is a cross-sectional view showing the positions and directions of the discharge ports of the first plasma source and the second plasma source according to various embodiments of the present invention. [Figure 11] It is a cross-sectional view showing the positions and directions of the discharge ports of the first plasma source and the second plasma source according to various embodiments of the present invention. [Figure 12] It is a cross-sectional view showing the positions and directions of the discharge ports of the first plasma source and the second plasma source according to various embodiments of the present invention.

Modes for Carrying Out the Invention

[0020] Hereinafter, various preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0021] The embodiments of the present invention are provided to more fully explain the present invention to those having ordinary knowledge in the relevant technical field. The following embodiments can be modified into various other forms, and the scope of the present invention is not limited to the following embodiments. Rather, these embodiments are provided to further enrich and complete the present disclosure and fully convey the idea of the present invention to those skilled in the art.

[0022] Also, in the drawings, the thickness and size of each layer are exaggerated for the convenience of explanation and clarity. Furthermore, embodiments of the idea of the present invention should not be construed as being limited to the specific shapes of the regions shown in this specification, and for example, should include changes in shape caused by manufacturing.

[0023] FIG. 1 is a schematic diagram showing a substrate processing apparatus according to an embodiment of the present invention, FIG. 2 is a schematic diagram showing a substrate processing apparatus according to another embodiment of the present invention, FIG. 3 is a schematic top view showing a plasma source assembly 3000 according to an embodiment of the present invention, and FIG. 4 is a schematic cutaway perspective view showing the plasma source assembly 3000 of FIGS. 1 and 2.

[0024] First, a substrate processing apparatus according to an embodiment of the present invention can generally include a process chamber 1000, a chamber lid 1100a, a substrate support unit 2000, a plasma source assembly 3000, and a gas injection unit 4000.

[0025] As shown in FIG. 1, a reaction space A can be formed inside the process chamber 1000. The process chamber 1000 can be connected to a vacuum pump via an exhaust unit so as to form a vacuum atmosphere. Furthermore, the process chamber 1000 can include an entrance / exit for loading or unloading the substrate S into / from the reaction space A, and a gate for opening and closing the same.

[0026] As shown in Figures 1 and 2, the chamber lids 1100a and 1100b may be formed to cover the upper part of the process chamber 1000.

[0027] Specifically, the chamber lids 1100a and 1100b are formed to cover at least a portion of the process chamber 1000, and multiple holes, slits, or openings are provided through at least a portion of them, allowing the process gas activated by the plasma source assembly 3000 coupled to the upper part to flow to the lower part of the chamber lid 1100.

[0028] For example, the chamber lid 1100a may be coupled to the upper part of the process chamber 1000, with a gas injection plate 4100 positioned between it and the process chamber 1000.

[0029] In this case, as shown in Figure 1, the chamber lid 1100a may be coupled to the first plasma source 3100 and the second plasma source 3200 at its upper part, and at least one of the plurality of holes, slits, and openings may be formed at positions corresponding to the first plasma source 3100 and the second plasma source 3200 so that process gas activated by the first plasma source 3100 and the second plasma source 3200 can be injected downward.

[0030] Alternatively, as shown in Figure 2, the chamber lid 1100b may have a gas exhaust plate 7000 coupled to its upper part, with a first plasma source 3100 and a second plasma source 3200 coupled to the upper part of the gas exhaust plate 7000.

[0031] In this case, the chamber lid 1100b may be formed as an opening so that process gas activated by the first plasma source 3100 and the second plasma source 3200 coupled to the upper gas discharge plate 7000 is injected in the direction of the gas injection plate 4000.

[0032] As shown in Figure 1, the substrate support 2000 may be coupled to the process chamber 1000 to support at least one or more substrates S within the reaction space A. For example, the substrate support 2000 may be installed in the process chamber 1000 facing the gas injection unit 4000. Furthermore, the substrate support 2000 may include a heater (not shown) inside for heating the substrate S. Since the substrate support 2000 is configured to support the substrate S, it may also be called a substrate mounting unit, susceptor, substrate holder, etc.

[0033] The shape of the upper plate of the substrate support section 2000 generally corresponds to the shape of the substrate S, but is not limited to this, and can be provided in various shapes to ensure stable mounting of the substrate S. Furthermore, a shaft may be connected to the substrate support section 2000, and the shaft may be connected to an external motor so that it can be raised and lowered. Optionally, means for maintaining airtightness, such as a bellows tube, may be connected between the shaft and the process chamber 1000.

[0034] In some embodiments, the substrate support portion 2000 may further include electrostatic electrodes to apply an electrostatic force to the substrate S and fix it to the upper part thereof. In this case, the electrostatic electrodes can generate the electrostatic force using DC power.

[0035] As shown in Figure 1, the gas injection unit 4000 may be coupled to the process chamber 1000 to inject process gas supplied from outside the process chamber 1000 into the reaction space A. For example, the gas injection unit 4000 may be coupled to the upper part of the process chamber 1000 so as to face the substrate support unit 2000. The gas injection unit 4000 can supply process gas, such as a source gas, reaction gas, or inert gas, onto the substrate S in the reaction space A.

[0036] The gas injection unit 4000 may have a distribution plate 4100 formed therein for injecting process gas activated by the plasma source assembly 3000 onto the substrate support unit 2000.

[0037] Specifically, the gas injection plate 4100 may be formed at the bottom of the plasma source assembly 3000 and may include a gas injection plate 4100 for injecting process gas activated by the plasma source assembly 3000 onto the substrate support 2000. The gas injection plate 4100 may have a number of injection holes formed on its lower side. Optionally, the gas injection unit 4000 may further include a middle plate, such as a blocker plate, between the plasma source and the gas injection plate 4100 for injecting gas.

[0038] The plasma source assembly 3000 is coupled to the process chamber 1000 above the substrate support 2000 and is for supplying activated process gas to the reaction space A, and may be coupled, for example, to the chamber lid 1100b that covers the top of the process chamber 1000.

[0039] The plasma source assembly 3000 may include a first plasma source 3100 coupled on the chamber lid 1100a to supply activated process gas to the reaction space A, having a first toroidal channel 3114 formed therein having a first radius from the center of the chamber lid 1100a; a second plasma source 3200 having a second toroidal channel 3214 formed therein having a second radius smaller than that of the first plasma source 3100; and insulating members provided between the first plasma source 3100 and the second plasma source 3200 and the chamber lid 1100a.

[0040] Alternatively, the plasma source assembly 3000 may include a first plasma source 3100 having a first toroidal channel 3114 with a first radius from the center of the chamber lid 1100a, a second plasma source 3200 having a second toroidal channel 3214 with a second radius smaller than that of the first plasma source 3100, a gas exhaust plate 7000 coupled on the chamber lid 1100a from which the activated process gas is discharged through the first plasma source 3100 and the second plasma source 3200, and the insulating member provided between the first plasma source 3100 and the second plasma source 3200 and the gas exhaust plate 7000.

[0041] In this case, the insulating member may include the first insulating members 3170a, 3170b, 3170c and the second insulating member 3270.

[0042] Specifically, the first plasma source 3100, coupled to the upper part of the process chamber 1000, may be arranged to surround the second plasma source 3200. For example, the second plasma source 3200 may be coupled to the upper part of the process chamber 1000 and arranged in a donut shape of the second radius in the central part of the upper plate of the gas injection unit 4000, and the first plasma source 3100 may be arranged in a donut shape of the first radius surrounding the donut shape of the second plasma source 3200. Such a plasma source assembly 3000 allows activated process gas to be injected over the entire central and edge regions of the gas injection unit 4000.

[0043] Figure 5 is a perspective view showing a first plasma source 3100 according to one embodiment of the present invention, Figure 6 is a perspective view showing a second plasma source 3200 according to one embodiment of the present invention, Figure 7 is a top view showing a gas exhaust plate 7000 according to one embodiment of the present invention, and Figure 8 is a schematic diagram showing power transmission of the first plasma source 3100 in one embodiment of the present invention.

[0044] As shown in Figures 3 and 5, the first plasma source 3100 may include a first reaction body 3110, a plurality of first magnetic cores 3130a, 3130b, 3130c, a plurality of first windings 3150a, 3150b, 3150c, and a plurality of first insulating members 3170a, 3170b, 3170c.

[0045] The first reaction body 3110 may include a first toroidal channel 3114, a plurality of first body portions, and a plurality of first insulating portions 3116a, 3116b, 3116c.

[0046] The first reaction body 3110 can be configured such that the plurality of first gas diffusion spaces 3114a, 3114b, and 3114c collectively form a first toroidal channel 3114.

[0047] As shown in Figure 5, the first reaction body 3110 may be formed by joining a plurality of first body parts, and each of the plurality of first body parts may have a first gas diffusion space 3114a, 3114b, and 3114c formed inside it.

[0048] Specifically, in the first reaction body 3110, the plurality of first body parts may be arranged such that the first gas diffusion spaces 3114a, 3114b, and 3114c as a whole form the first toroidal channel 3114. More specifically, the plurality of first body parts may be formed to correspond to structures obtained by dividing the overall shape of the first toroidal channel 3114, thereby limiting the first toroidal channel 3114 as a whole. For example, if the first toroidal channel 3114 is formed in a donut shape as a whole, the plurality of first body parts may be formed to correspond to structures obtained by dividing such donut shape into multiple parts.

[0049] For example, as shown in Figure 4, the first reaction body 3110 is composed of three first body sections, a fluid channel 3114a may be formed inside one of the multiple first body sections, a fluid channel 3114b may be formed inside another of the multiple first body sections, and a fluid channel 3114c may be formed inside the remaining one of the multiple first body sections.

[0050] That is, the first reaction body 3110 may be formed by a plurality of first body parts, for example, the plurality of first body parts may be formed by the combination of a plurality of first-first body parts 3111a, 3111b, 3111c and a plurality of first-second body parts 3112a, 3112b, 3112c.

[0051] The cross-sectional shapes of the first gas diffusion spaces 3114a, 3114b, and 3114c can be various shapes, such as circles, ellipses, semicircles, and polygons.

[0052] In some embodiments, the interiors of the plurality of first body portions may be formed by coating a conductive material with an insulating material. For example, the plurality of first body portions may be formed by coating a metal with an insulator, such as a metal oxide, metal nitride, or a metal compound such as a nickel alloy (Ni alloy).

[0053] The first reaction body 3110 may be separated or formed as a single body and can be fabricated with a 3D printer.

[0054] The first reaction body 3110 may include a plurality of first-first body sections 3111a, 3111b, 3111c, a plurality of first-second body sections 3112a, 3112b, 3112c, a plurality of first gas inlets 3118a, 3118b, 3118c, and a plurality of first openings 3119a, 3119b, 3119c.

[0055] As shown in Figure 5, the multiple first-first body portions 3111a, 3111b, and 3111c can form at least a portion of the first toroidal channel 3114 and are tubular structures that form a flow path inside so as to form a portion of the first toroidal channel 3114.

[0056] Multiple first-second body portions 3112a, 3112b, and 3112c are formed on the sides of multiple first-first body portions 3111a, 3111b, and 3111c, and are tubular structures that form internal flow channels so that multiple first insulating portions 3116a, 3116b, and 3116c are bonded to the outside and the other parts of the first toroidal channel 3114 can be formed.

[0057] The multiple first-first body portions 3111a, 3111b, 3111c may have a first length and a second width, and the multiple first-second body portions 3112a, 3112b, 3112c may have a second length and a second width. In this case, the first length may be greater than the second length, and the first width may be greater than the second width. That is, the length and width of the multiple first-second body portions 3112a, 3112b, 3112c may be formed to be smaller than the length and width of the multiple first-first body portions 3111a, 3111b, 3111c, and the multiple first magnetic cores 3130a, 3130b, 3130c may be bonded to the outer circumferential surfaces of the multiple first-second body portions 3112a, 3112b, 3112c.

[0058] In some embodiments, flanges 2126 and 2127 can be connected to the ends of multiple first-second body portions 3112a, 3112b, and 3112c. For example, one side of multiple first-first body portions 3111a, 3111b, and 3111c can be connected to one flange 2127 on one side of multiple first-second body portions 3112a, 3112b, and 3112c, and first insulating portions 3116a, 3116b, and 3116c can be connected between the flange 2126 on the other side of multiple first-second body portions 3112a, 3112b, and 3112c and the other side of multiple first-first body portions 3111a, 3111b, and 3111c, respectively.

[0059] In the first reaction body 3110, the first gas diffusion spaces 3114a, 3114b, and 3114c can communicate with each other and with the flow paths in the flanges 2126, 2127 and the first insulating parts 3116a, 3116b, and 3116c, so that the first toroidal channel 3114 is formed throughout the first reaction body 3110.

[0060] As shown in Figures 3 and 5, a plurality of first gas inlets 3118a, 3118b, and 3118c may be formed in at least a portion of a plurality of first-first body portions 3111a, 3111b, and 3111c.

[0061] Specifically, multiple first gas inlets 3118a, 3118b, 3118c may be formed by penetrating at least a portion of multiple first-first body sections 3111a, 3111b, 3111c so that process gas supplied from the outside flows into multiple first gas diffusion spaces 3114a, 3114b, 3114c. For example, multiple first gas inlets 3118a, 3118b, 3118c may be formed on the upper part of multiple first-first body sections 3111a, 3111b, 3111c.

[0062] The positions in which the multiple first gas inlets 3118a, 3118b, and 3118c are formed are not limited and may be formed on the sides of the multiple first-first body portions 3111a, 3111b, and 3111c.

[0063] As shown in Figures 4 and 5, the multiple first openings 3119a, 3119b, and 3119c are formed in at least a portion of the multiple first-first body portions 3111a, 3111b, and 3111c, allowing the activated process gas to be discharged from the first reaction body 3110.

[0064] For example, multiple first openings 3119a, 3119b, 3119c may be formed on the lower surfaces of multiple first-first body portions 3111a, 3111b, 3111c. The process gas that flows into the first toroidal channel 3114 through multiple first gas inlets 3118a, 3118b, 3118c can be activated and discharged to the bottom of the first plasma source 3100 through multiple first openings 3119a, 3119b, 3119c. For example, the multiple first openings 3119a, 3119b, 3119c may be formed in the shape of slits.

[0065] For example, as shown in Figure 5, the multiple first openings 3119a, 3119b, 3119c may be formed on the lower surfaces of the multiple first-first body portions 3111a, 3111b, 3111c so that the activated process gas, i.e., radicals, can be supplied below the first plasma source 3100.

[0066] Alternatively, the multiple first openings 3119a, 3119b, and 3119c may be formed on the sides of the multiple first body portions, as shown in Figures 10 and 11, so that radicals can be supplied to the sides of the first plasma source 3100.

[0067] As shown in Figures 4 and 5, the multiple first insulating members 3170a, 3170b, and 3170c can be bonded to at least one surface of the first reaction body 3110. Specifically, the multiple first insulating members 3170a, 3170b, and 3170c are formed in a shape that can cover the multiple first body portions, and openings corresponding to the multiple first openings 3119a, 3119b, and 3119c are formed so that the activated process gas can be discharged through the openings of the multiple first insulating members 3170a, 3170b, and 3170c.

[0068] Furthermore, as shown in Figures 3 and 5, the first reaction body 3110 may include a plurality of first insulating parts 3116a, 3116b, and 3116c coupled between the plurality of first body parts.

[0069] The first insulating parts 3116a, 3116b, and 3116c can be coupled between the plurality of first body parts. The first insulating parts 3116a, 3116b, and 3116c can be interposed between the plurality of first body parts such that they are separated from each other without being electrically directly connected.

[0070] The first insulating parts 3116a, 3116b, and 3116c may have flow channels formed inside them so that the first gas diffusion spaces 3114a, 3114b, and 3114c within the plurality of first body parts are connected to each other. The first insulating parts 3116a, 3116b, and 3116c may be formed from a suitable insulating material, such as ceramic, oxide, nitride, or polymer resin.

[0071] As shown in Figures 3 and 5, the multiple first magnetic cores 3130a, 3130b, and 3130c may be arranged along the first toroidal channel 3114, spaced apart from each other, while each surrounding the first reaction body 3110.

[0072] For example, multiple first magnetic cores 3130a, 3130b, and 3130c may be arranged on each of the multiple first body portions.

[0073] Each of the multiple first magnetic cores 3130a, 3130b, and 3130c may be formed as a single closed structure or have a structure in which multiple divisions are joined together, and the multiple first magnetic cores 3130a, 3130b, and 3130c may include a magnetic material, such as a ferrite material.

[0074] As shown in Figures 5 and 8, a plurality of first windings 3150a, 3150b, and 3150c may be arranged to surround a plurality of first magnetic cores 3130a, 3130b, and 3130c. For example, winding 3150a may be arranged to surround magnetic core 3130a, winding 3150b may be arranged to surround magnetic core 3130b, and winding 3150c may be arranged to surround magnetic core 3130c.

[0075] Multiple first windings 3150a, 3150b, and 3150c can be powered by the power supply unit 6000 to induce magnetic fields within the multiple first magnetic cores 3130a, 3130b, and 3130c. For example, if multiple first windings 3150a, 3150b, and 3150c are wound in the width direction of the multiple first magnetic cores 3130a, 3130b, and 3130c, when power is applied to the multiple first windings 3150a, 3150b, and 3150c, magnetic fields can be induced within the multiple first magnetic cores 3130a, 3130b, and 3130c along their circumferential direction.

[0076] A substrate processing apparatus according to one embodiment of the present invention may include a power supply unit 6000 and an ignition unit.

[0077] As shown in Figure 8, the power supply unit 6000 may include a power supply device that can supply RF power to multiple first windings 3150a, 3150b, and 3150c via a resonant circuit (not shown), etc. For example, the power supply unit 6000 may include a switching mode power supply (SMPS).

[0078] The ignition unit may include a plurality of flanges and a plurality of switches connected to the plurality of first body portions on both sides of the first insulating portions 3116a, 3116b, and 3116c.

[0079] As shown in Figures 3 and 6, the second plasma source 3300 may include a second reaction body 3210, a second magnetic core 3230, a first winding 3150, and a first insulating member 3170.

[0080] The second reaction body 3210 may include a second toroidal channel 3214, a second body portion, and a second insulating portion 3216.

[0081] The second reaction body 3210 may be positioned such that the second gas diffusion space as a whole forms a second toroidal channel 3214.

[0082] As shown in Figure 6, the second reaction body 3210 may be formed in a second body portion, which is formed inward of the first reaction body 3110, and a second gas diffusion space may be formed inside it.

[0083] Specifically, in the second reaction body 3210, the second body portion may be arranged such that the second gas diffusion space as a whole forms the second toroidal channel 3214. More specifically, the second body portion may be formed to correspond to the overall shape of the second toroidal channel 3214, or to correspond to structures obtained by dividing the overall shape of the second toroidal channel 3214, so as to define the second toroidal channel 3214 as a whole.

[0084] For example, if the second toroidal channel 3214 is formed in an overall donut shape, the second body portion may be formed in such a donut shape or to correspond to a structure divided into multiple parts.

[0085] For example, as shown in Figures 3 and 6, the second reaction body 3210 is composed of two second body sections, and a second toroidal channel 3214 can be formed by creating a fluid flow path inside the second body sections.

[0086] That is, the second reaction body 3210 may be formed in the second body portion, for example, the second body portion may be formed by the bonding of the second-first body portion 3211 and the second-second body portion 3212, respectively.

[0087] The cross-sectional shape of the second gas diffusion space can have various shapes, such as a circle, an ellipse, a semicircle, or a polygon.

[0088] In some embodiments, the interior of the second body portion may be formed by coating a conductive material with an insulating material, similar to the plurality of first body portions. For example, an insulator, such as a metal oxide, metal nitride, or a metal compound such as a nickel alloy (Ni alloy), may be coated onto a metal.

[0089] The second reaction body 3210 may be separated or formed as a single body and can be fabricated with a 3D printer.

[0090] The second reaction body 3210 may include a second-first body section 3211, a second-second body section 3212, a second gas inlet 3218, and a second opening 3219.

[0091] As shown in Figure 6, the second-first body portion 3211 can form at least a portion of the second toroidal channel 3214 and is a tubular structure that forms a flow path inside so as to form a portion of the second toroidal channel 3214.

[0092] The second-second body portion 3212 is formed to connect with the second-first body portion 3211, has a second insulating portion 3216 coupled to its exterior, and is a tubular structure that forms a flow path inside so as to form the other part of the second toroidal channel 3214.

[0093] The second-first body portion 3211 may have a third length and a third width, and the second-second body portion 3212 may have a fourth length and a fourth width. In this case, the third length may be greater than the fourth length, and the third width may be greater than the fourth width. That is, the length and width of the second-second body portion 3212 may be formed to be smaller than the length and width of the second-first body portion 3211, so that the second magnetic core 3230 can be bonded to the outer circumferential surface of the second-second body portion 3212.

[0094] In some embodiments, a flange may be attached to the end of the second-second body portion 3212.

[0095] In the second reaction body 3210, the second gas diffusion space can communicate with the flow path in the flange and the second insulating portion 3216 so that the second toroidal channel 3214 is formed throughout the second reaction body 3210.

[0096] As shown in Figures 3 and 6, the second gas inlet 3218 may be formed in at least a portion of the second-first body portion 3211.

[0097] Specifically, the second gas inlet 3218 may be formed by penetrating at least a portion of the second-first body portion 3211 so that process gas supplied from the outside flows into the second gas diffusion space. For example, the second gas inlet 3218 may be formed on the upper part of the second-first body portion 3211.

[0098] The position in which the second gas inlet 3218 is formed is not limited and may be formed on the side of the second-first body portion 3211.

[0099] As shown in Figures 4 and 6, the second opening 3219 is formed in at least a portion of the second-first body portion 3211, allowing the activated process gas to be discharged from the second reaction body 3210.

[0100] For example, a second opening 3219 may be formed on the lower surface of the second-first body portion 3211. The process gas that flows into the second toroidal channel 3214 via the second gas inlet 3218 can be activated and discharged to the lower part of the second plasma source 3200 via the second opening 3219. For example, the second opening 3219 may be formed in the shape of a slit.

[0101] For example, the second opening 3219 may be formed on the lower surface of the second-first body portion 3211 so as to allow the activated process gas, i.e., radicals, to be supplied below the second plasma source 3200, as shown in Figure 6.

[0102] As shown in Figures 4 and 6, the second insulating member 3270 can be bonded to at least one surface of the second reaction body 3210. Specifically, the second insulating member 3270 is formed in a shape that can cover the second body portion, and an opening corresponding to the second opening 3219 is formed therein, so that the activated process gas can be discharged through the opening of the second insulating member 3270.

[0103] Furthermore, as shown in Figures 3 and 6, the second reaction body 3210 may include a second insulating portion 3216 coupled to the second body portion.

[0104] The second insulating portion 3216 can be interposed between the second body portions such that the ends of the second body portions are not electrically directly connected to each other and are separated from each other.

[0105] The second insulating portion 3216 may have a flow path formed inside it so that the second gas diffusion spaces within the second body portion are connected to each other. The second insulating portion 3216 may be formed of a suitable insulating material, such as ceramic, oxide, nitride, polymer resin, etc.

[0106] As shown in Figures 3 and 6, the second magnetic core 3230 may be positioned within a portion of the second toroidal channel 3214, surrounding the second reaction body 3210.

[0107] For example, the second magnetic core 3230 may be placed on the second body portion.

[0108] The second magnetic core 3230 may be formed as a single closed structure or may have a structure in which multiple divisions are joined together, and the second magnetic core 3230 may include a magnetic material, such as a ferrite material.

[0109] As shown in Figure 5, the second winding 3250 may be arranged to surround the second magnetic core 3230.

[0110] Although not shown in the diagram, the first winding 3250, like several first windings 3150a, 3150b, and 3150c, can be powered by the power supply unit 6000 to induce a magnetic force within the second magnetic core 3230. For example, if the second winding 3250 is wound in the width direction of the second magnetic core 3230, when power is applied to the second winding 3250, a magnetic force can be induced within the second magnetic core 3230 along its circumferential direction.

[0111] In the plasma source assembly 3000 according to the present invention, the number of the plurality of first body parts of the first plasma source 3100 is shown exemplarily and may be selected as two or more. Furthermore, the number of the plurality of first magnetic cores 3130a, 3130b, 3130c, the plurality of first windings 3150a, 3150b, 3150c, and the plurality of first insulating parts 3116a, 3116b, 3116c can be varied according to the number of the plurality of first body parts.

[0112] According to the first plasma source 3100, when power is applied from the power supply unit 6000 to the multiple first windings 3150a, 3150b, and 3150c, a magnetic force is induced in the multiple first magnetic cores 3130a, 3130b, and 3130c. This induced magnetic force can induce a current in the first toroidal channel 3114 that penetrates the interior of the multiple first magnetic cores 3130a, 3130b, and 3130c. This current can activate the gas within the first toroidal channel 3114, potentially forming a plasma atmosphere.

[0113] In the first plasma source 3100, a structure in which magnetic forces are induced in multiple first magnetic cores 3130a, 3130b, and 3130c from the currents flowing through multiple first windings 3150a, 3150b, and 3150c, and a current is induced in the first toroidal channel 3114 by these induced magnetic forces, can correspond to the principle of a transformer, and the second plasma source 3200 can be driven in the same manner.

[0114] From this perspective, the plasma source of the present invention may also be called a transformer-coupled plasma (TCP) device or a magnetic induction plasma device.

[0115] In some embodiments, the multiple first windings 3150a, 3150b, and 3150c can function as primary coils, and the first toroidal channel 3114, limited by the multiple first body portions, can function as a secondary coil. Thus, the multiple first windings 3150a, 3150b, and 3150c can be referred to as primary coils or primary windings, and the current flowing through the multiple first windings 3150a, 3150b, and 3150c can be referred to as primary current. Furthermore, the current induced within the first toroidal channel 3114 can also be referred to as secondary current.

[0116] When a secondary current is induced in the first toroidal channel 3114, the voltage can be applied almost entirely across the first insulating sections 3116a, 3116b, and 3116c. Thus, the ignition of the plasma in the first toroidal channel 3114 can begin within the first insulating sections 3116a, 3116b, and 3116c, and the second plasma source 3200 can also be ignited in the same manner.

[0117] A substrate processing apparatus according to one embodiment of the present invention may include a power supply unit 6000 and an ignition unit.

[0118] As shown in Figure 8, the power supply unit 6000 may include a power supply device that can supply RF power to multiple first windings 3150a, 3150b, and 3150c via a resonant circuit (not shown), etc. For example, the power supply unit 6000 may include a switching mode power supply (SMPS).

[0119] The ignition unit may include a plurality of flanges and a plurality of switches connected to the plurality of first body portions on both sides of the first insulating portions 3116a, 3116b, and 3116c.

[0120] In one embodiment of the present invention, the substrate processing apparatus may have the supply surface of the first plasma source 3100 and the supply surface of the second plasma source 3200, from which the process gas is supplied to the gas injection unit 4000, formed on different planes.

[0121] For example, as shown in Figures 1 and 4, the first plasma source 3100 and the second plasma source 3200 may be formed at different heights above the process chamber 1000. More specifically, the first plasma source 3100, which is formed on the outside, may be formed lower than the second plasma source 3200, which is formed on the inside, thereby being closer to the gas injection section 4000.

[0122] This makes it possible to uniformly control the amount of radicals applied to the edges and the center of the substrate S.

[0123] More specifically, a substrate processing apparatus according to one embodiment of the present invention may include a gas exhaust plate 7000, as shown in Figure 2.

[0124] As shown in Figures 1 and 4, the gas exhaust plate 7000 can be coupled to the first plasma source 3100 and the second plasma source 3200.

[0125] The gas discharge plate 7000 may have a plurality of discharge ports formed at positions corresponding to the first openings 3119a, 3119b, and 3119c for discharging the process gas activated by the first plasma source 3100 from the first plasma source 3100, and the second opening 3219 for discharging the process gas activated by the second plasma source 3200 from the second plasma source 3200.

[0126] The gas discharge plate 7000 may have multiple holes formed for discharging process gas activated in the first toroidal channel 3114 and the second toroidal channel 3214.

[0127] The gas discharge plate 7000 allows the activated process gas, i.e., radicals, to be discharged downward through the plurality of holes.

[0128] The gas discharge plate 7000 may have the plurality of discharge ports formed thereon, which may include a plurality of first gas discharge ports 7100 and at least one second gas discharge port 7200.

[0129] Multiple first gas outlets 7100 are formed at a first height H1 to supply process gas activated by the first plasma source 3100 to the gas injection unit 4000, and at least one second gas outlet 7200 may be formed at a second height H2, which is higher than the first height H1, to supply process gas activated by the second plasma source 3200 to the gas injection unit 4000. In this case, the multiple first gas outlets 7100 and at least one second gas outlet 7200 may be formed with steps.

[0130] Specifically, a plurality of first gas outlets 7100a, 7100b, and 7100c are formed in the lower section of a gas outlet plate 7000 having a first height H1 so that activated process gas is supplied to the upper side of the gas injection unit, and at least one second gas outlet 7200 may be formed in the upper section of a gas outlet plate 7000 having a second height H2 so that activated process gas is supplied to the upper side of the gas injection unit 4000.

[0131] For example, as shown in Figure 8, a plurality of first gas outlets 7100a, 7100b, and 7100c are formed in the lower section of the gas discharge plate 7000 having a first height H1, and at least one second gas outlet 7200 is formed in the upper section of the gas discharge plate 7000 having a second height H2, so that activated process gas can be injected below the gas injection section 4000.

[0132] Multiple first gas outlets 7100 are formed through the gas outlet plate 7000 and can be configured to supply process gas activated in the first plasma source 3100 from the first gas diffusion spaces 3114a, 3114b, and 3114c to the lower part of the multiple first body sections.

[0133] At least one second gas outlet 7200 may be formed through the gas outlet plate 7000 and configured to supply a process gas activated in the second plasma source 3200 from the second gas diffusion space to the lower part of the second body.

[0134] The multiple first gas outlets 7100a, 7100b, 7100c and at least one second gas outlet 7200 can penetrate in a cylindrical, conical, or pyramidal shape. That is, they can penetrate from the inside to the outside of the multiple first and second body portions with the same size, or they can penetrate so that the holes gradually increase in size.

[0135] As a result, the radicals are discharged to the outside of the plurality of first body parts and the second body parts, preventing particles from flowing into the first gas diffusion spaces 3114a, 3114b, 3114c and the second gas diffusion space inside the plurality of first body parts and the second body parts, and the amount of radicals discharged can be controlled according to the size and shape of the plurality of first gas outlets 7100a, 7100b, 7100c and at least one second gas outlet 7200.

[0136] According to various embodiments of the present invention, a plasma source assembly 3000 including a first plasma source 3100 and a second plasma source 300 can be coupled to a process chamber 1000 at various positions.

[0137] Figures 9 to 12 are cross-sectional views showing the position and direction of the outlets of the first plasma source 3100 and the second plasma source 3200 according to various embodiments of the present invention.

[0138] A gas exhaust plate 7000 can be coupled to the lower part of the first plasma source 3100 and the second plasma source 300 so as to correspond to a plurality of first openings 3119a, 3119b, 3119c and a second opening 3219.

[0139] The gas discharge plate 7000 has a plurality of first gas outlets 7100 and at least one second gas outlet 7200 formed on different planes with steps between them, thereby allowing radicals to be injected through the plurality of first gas outlets 7100 and at least one second gas outlet 7200 formed on different planes.

[0140] Multiple first gas outlets 7100a, 7100b, and 7100c are formed on the side of a gas discharge plate 7000 of a first height H1 so that activated process gas is supplied to the upper part of the gas injection unit 4000, and at least one second gas outlet 7200 may be formed on the upper part of a gas discharge plate 7000 of a second height H2 so that activated process gas is supplied to the upper part of the gas injection unit 4000.

[0141] For example, as shown in Figure 9, in a plasma source assembly 3000 coupled to the upper part of a process chamber 1000, a plurality of first openings 3119a, 3119b, 3119c of a first plasma source 3100 may be formed on the lower surface of the first plasma source 3100, and a second opening 3219 of a second plasma source 300 may be formed on the lower surface of the second plasma source 300, so that the process gas is supplied downwards to the plasma sources.

[0142] In other words, the multiple first openings 3119a, 3119b, 3119c and the second opening 3219 are formed on different planes with steps above each other at the top of the process chamber 1000, and radicals can be supplied in the direction of the gas injection section 4000. At this time, the first plasma source 3100 formed in the edge region of the process chamber 1000 is formed closer to the lower substrate support section 2000, so that sufficient radicals can be supplied to the edge region.

[0143] As shown in Figure 10, in a plasma source assembly 3000 coupled to the upper part of the process chamber 1000, a plurality of first openings 3119a, 3119b, 3119c may be formed on the side of the first plasma source 3100 so that the process gas is supplied toward the side, and a second opening 3219 may be formed downward so that the process gas is supplied toward the downward.

[0144] Specifically, a gas exhaust plate 7000 may be coupled to the lower part of the first plasma source 3100 and the second plasma source 300 so as to correspond to a plurality of first openings 3119a, 3119b, 3119c and a second opening 3219, in which case the plurality of first openings 3119a, 3119b, 3119c and the second opening 3219 are formed in different planes and in different directions from each other, so that radicals can be injected through a plurality of first gas outlets 7100 and at least one second gas outlet 7200.

[0145] For example, a second plasma source 3200 formed at the top of the process chamber 1000, surrounding the upper part of the central region, may be formed higher than a first plasma source 3100 formed at the top of the process chamber 1000, surrounding the corner region. In this case, the first plasma source 3100 formed in the corner region is formed even closer to the corner of the lower substrate support portion 2000, and is injected into the edge region at the top of the substrate support portion 2000, thereby supplying sufficient radicals to the edge region of the substrate S.

[0146] As shown in Figure 11, in a plasma source assembly 3000 coupled to the upper part of the process chamber 1000, a plurality of first openings 3119a, 3119b, 3119c may be formed downward and laterally on the lower and side surfaces of the first plasma source 3100 to supply the process gas downward and to the side surfaces, and a second opening 3219 may be formed downward to supply the process gas downward.

[0147] Specifically, a gas exhaust plate 7000 may be coupled to the lower part of the first plasma source 3100 and the second plasma source 300 so as to correspond to a plurality of first openings 3119a, 3119b, 3119c and a second opening 3219, in which case at least one second gas outlet 7200 may be formed facing downward, and a plurality of first gas outlets 7100 may be formed facing laterally and downward.

[0148] For example, if the second plasma source 300, formed at the top of the process chamber 1000 surrounding the upper part of the central region, is formed higher than the first plasma source 3100, formed at the top of the process chamber 1000 surrounding the upper part of the edge region, then the first plasma source 3100 formed in the edge region can supply a sufficient amount of radicals to the edge region by not only injecting the process gas downwards but also injecting it to the sides, thereby supplying a large amount of radicals to the edge region.

[0149] Furthermore, the first plasma source 3100 is coupled to the side of the process chamber 1000 and forms surrounding the side of the process chamber 1000, and the second plasma source 3200 is coupled to the upper surface of the process chamber 1000, so that radicals are injected from the first plasma source 3100 toward the side of the substrate support portion 2000, and sufficient radicals are supplied to the edge region of the substrate S.

[0150] As shown in Figure 12, in a plasma source assembly 3000 coupled to the upper part of the process chamber 1000, a plurality of first gas outlets 7100 may be formed at a predetermined angle inclined with respect to at least one second gas outlet 7200, so that the process gas is supplied at an inclination toward a substrate placed below, and a second opening 3219 may be formed downward so that the process gas is supplied downward.

[0151] Specifically, the gas exhaust plate 7000 is formed as a bent plane with an inclination, and the first plasma source 3100 and the second plasma source 3200 can be coupled to its upper part. In this case, the plurality of first openings 3119a, 3119b, 3119c and the second opening 3219 are formed at an inclination, and their extensions are formed at a predetermined angle of inclination, so that radicals can be injected through the plurality of first gas outlets 7100 and at least one second gas outlet 7200.

[0152] For example, a second plasma source 3200 formed at the top of the process chamber 1000, surrounding the upper part of the central region, may be formed higher than a first plasma source 3100 formed at the top of the process chamber 1000, surrounding the upper part of the edge region. In this case, the first plasma source 3100 formed in the edge region injects the process gas at an angle toward the lower central part, and as it moves toward the edge of the lower substrate support portion 2000, it gets closer to the substrate S, thereby supplying sufficient radicals to the edge region of the substrate S.

[0153] As shown in Figures 9 to 12, the multiple first gas outlets 7100 and at least one second gas outlet 7200 are formed with steps on different planes or at a predetermined angle of inclination, so that the edge region of the substrate support 2000 is closer to the plasma source assembly 3000. This ensures that even if the same power flows into the first plasma source 3100 and the second plasma source 3200, sufficient radicals can be supplied to the edge region.

[0154] In one embodiment of the present invention, the first plasma source 3100 and the second plasma source 3200 of the substrate processing apparatus can be supplied with process gas from a process gas supply unit 5000 formed outside the process chamber 1000.

[0155] For example, as shown in Figure 1, the same process gas can be supplied to the first plasma source 3100 and the second plasma source 3200 from a single, formed process gas supply unit 5000.

[0156] The process gas supply unit 5000 may be individually formed to include the source gas, reaction gas, and inert gas so that they can be supplied separately. In this case, when the plasma source is ignited, the process gas may be supplied from a gas supply unit containing an inert gas such as Ar, He, H2, or N2 to the process gas supply unit 5000.

[0157] Furthermore, after ignition, the process gas supply unit 5000 may supply the source gas (or reaction gas) and inert gas individually or simultaneously from each gas supply unit while maintaining the plasma.

[0158] In another embodiment of the present invention, the process gas supply unit 5000 of the substrate processing apparatus consists of a first process gas supply unit 5100 and a second process gas supply unit 5200, which are connected to the first plasma source 3100 and the second plasma source 3200 respectively, and can supply different gases to each other.

[0159] For example, as shown in Figure 9, the first plasma source 3100 can receive a first process gas from the first process gas supply unit 5100, and the second plasma source 3200 can receive a second process gas, different from the first process gas, from the second process gas supply unit 5200.

[0160] In this configuration, the first-process gas supply unit 5100 and the second-process gas supply unit 5200 are connected to the first plasma source 3100 and the second plasma source 3200, respectively, so that the first-process gas can be supplied to the first plasma source 3100 and the second-process gas can be supplied to the second plasma source 3200.

[0161] Furthermore, the first-stage gas supply unit 5100 and the second-stage gas supply unit 5200 may be connected to the first plasma source 3100 and the second plasma source 3200 by the same piping, and a first inlet control valve 5110 and a second inlet control valve 5210 may be installed. This allows the first-stage gas to be selectively supplied to the first plasma source 3100 and the second plasma source 3200, and the second-stage gas to be selectively supplied to the first plasma source 3100 and the second plasma source 3200.

[0162] Furthermore, multiple first valves 5111a, 5111b may be formed in the first plasma source 3100 for supplying process gas to multiple first gas inlets 3118a, 3118b, 3118c formed in the first plasma source 3100.

[0163] The substrate processing apparatus described above may be used as a thin-film deposition apparatus, for example, an atomic layer deposition (ALD) apparatus or a chemical vapor deposition (CVD) apparatus.

[0164] According to the substrate processing apparatus, since the plasma source assembly 3000 is coupled to the upper part of the gas injection unit 4000, activated process gas, such as radicals, can be directly supplied to the substrate S. This shortens the radical supply path, and the path to which the radicals are supplied can be adjusted according to the position of the substrate S. As a result, when using the gas injection unit 4000, radicals are supplied more uniformly to the substrate compared to when using a conventional remote plasma apparatus, thereby improving process reliability.

[0165] Although the present invention has been described with reference to the embodiments shown in the drawings, these are merely illustrative, and a person with ordinary skill in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true scope of technical protection of the present invention must be determined by the technical idea of ​​the appended claims.

Claims

1. A process chamber in which a reaction space is formed inside, A chamber lid covering the upper part of the process chamber, A substrate support unit is disposed within the process chamber to support at least one or more substrates, A plasma source assembly comprising: a first plasma source coupled to the chamber lid and having a first toroidal channel having a first radius from the center of the chamber lid, a second plasma source having a second toroidal channel having a smaller second radius than the first plasma source, and an insulating member provided between the first plasma source, the second plasma source and the chamber lid, to supply activated process gas to the reaction space; A gas injection section is formed opposite the substrate support section and at the lower part of the plasma source assembly, and has a gas injection plate formed thereon for injecting process gas activated by the plasma source assembly onto the substrate support section, Includes, A substrate processing apparatus characterized in that the first plasma source is provided with a first opening through which a process gas activated by the first plasma source is discharged, and the second plasma source includes a second opening through which a process gas activated by the second plasma source is discharged, and the heights of the first opening and the second opening are different from each other.

2. A process chamber in which a reaction space is formed inside, A chamber lid covering the upper part of the process chamber, A substrate support unit is disposed within the process chamber to support at least one or more substrates, A plasma source assembly comprising: a first plasma source having a first toroidal channel having a first radius from the center of the chamber lid to supply activated process gas to the reaction space; a second plasma source having a second toroidal channel having a smaller radius than the first plasma source; a gas exhaust plate coupled to the chamber lid from which activated process gas is discharged through the first and second plasma sources; and an insulating member provided between the first and second plasma sources and the gas exhaust plate; A gas injection section is formed opposite the substrate support section and at the lower part of the plasma source assembly, and has a gas injection plate formed thereon for injecting process gas activated by the plasma source assembly onto the substrate support section, Includes, A substrate processing apparatus characterized in that the first plasma source is provided with a first opening through which a process gas activated by the first plasma source is discharged, and the second plasma source includes a second opening through which a process gas activated by the second plasma source is discharged, and the heights of the first opening and the second opening are different from each other.

3. The first plasma source is, A first reaction body comprising a plurality of first body portions, each having a plurality of first gas diffusion spaces formed inside, and a plurality of first insulating portions coupled between the plurality of first body portions, wherein the plurality of first body portions are arranged such that the plurality of first gas diffusion spaces as a whole form the first toroidal channel, A plurality of first magnetic cores are arranged to surround each of the first reaction bodies and to be spaced apart from each other along the first toroidal channel, A plurality of first windings are arranged to surround the plurality of first magnetic cores, and power is supplied from the power supply unit to induce magnetic force within the plurality of first magnetic cores, Includes, The insulating member is The substrate processing apparatus according to claim 1 or claim 2, comprising a plurality of first insulating members bonded to at least one surface of the first reaction body.

4. The first reaction body is A plurality of first-first body portions forming at least a portion of the first toroidal channel, Other parts of the first toroidal channel, comprising a plurality of first-2 body portions formed on the sides of the plurality of first-1 body portions, to which the plurality of first insulating portions are coupled externally, Multiple first gas inlets are formed by penetrating at least a portion of the multiple first-1 body portions so that process gas supplied from the outside flows into the multiple first gas diffusion spaces, A plurality of first openings are formed in at least a portion of the plurality of first-1 body portions and are used to discharge the activated process gas from the first reaction body, A substrate processing apparatus according to claim 3, including the following:

5. The second plasma source is, A second reaction body comprising a second body portion formed inward from the first reaction body and having a second gas diffusion space formed inside, and a second insulating portion coupled to the second body portion, wherein the second body portion is arranged such that the second gas diffusion space as a whole forms the second toroidal channel, A second magnetic core is positioned in a portion of the second toroidal channel, surrounding the second reaction body, A second winding is arranged to surround the second magnetic core, and power is supplied from the power supply unit to induce a magnetic field within the second magnetic core. Includes, The insulating member is The substrate processing apparatus according to claim 1 or claim 2, comprising a second insulating member bonded to at least one surface of the second reaction body.

6. The second reaction body is The second-first body portion forms a part of the second toroidal channel, The other portion of the second toroidal channel, which is formed to be connected to the second-first body portion and to which the second insulating portion is coupled externally, At least one second gas inlet is formed by penetrating at least a portion of the 2-1 body so that the process gas flows into the second gas diffusion space, At least one second opening is formed in at least a portion of the second-first body portion and discharges the activated process gas from the second reaction body, The substrate processing apparatus according to claim 5, including the following:

7. The aforementioned gas discharge plate is The substrate processing apparatus according to claim 2, wherein a plurality of outlets are formed at positions corresponding to a first opening for discharging the process gas activated by the first plasma source from the first plasma source, and a second opening for discharging the process gas activated by the second plasma source from the second plasma source.

8. The aforementioned gas discharge plate is A plurality of first gas outlets are formed at a first height to supply the process gas activated by the first plasma source to the gas injection section, At least one second gas outlet is formed at a second height higher than the first height to supply the process gas activated by the second plasma source to the gas injection section, Includes, The substrate processing apparatus according to claim 7, wherein the plurality of first gas outlets and the at least one second gas outlet are formed with a step.

9. The substrate processing apparatus according to claim 8, characterized in that each of the first gas outlet and the second gas outlet is formed in the form of a plurality of holes.

10. The aforementioned plurality of first gas outlets are, A gas discharge plate of the first height is formed below the gas discharge plate so that the activated process gas is supplied to the upper side of the gas injection section. The at least one second gas outlet is, The substrate processing apparatus according to claim 8, wherein an activated process gas is supplied to the upper side of the gas injection section, and is formed on the upper part of the gas discharge plate of the second height.

11. The aforementioned plurality of first gas outlets are, A gas discharge plate of the first height is formed on the side of the gas discharge plate so that the activated process gas is supplied to the upper part of the gas injection section. The at least one second gas outlet is, The substrate processing apparatus according to claim 8, wherein an activated process gas is supplied to the upper side of the gas injection section, and is formed on the upper part of the gas discharge plate of the second height.

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