Substrate processing equipment

Abstract

A substrate processing apparatus according to one aspect of the present invention may include: a process chamber having a reaction space formed inside; a chamber lid covering the upper part of the process chamber; a substrate support portion disposed within the process chamber; a plasma source assembly comprising: a first plasma source coupled on the chamber lid and having a first toroidal channel having a first radius; a second plasma source having a second toroidal channel having a second radius; and insulating members provided between the first plasma source, the second plasma source and the chamber lid; a gas injection unit having a gas injection plate for injecting process gas activated by the plasma source assembly onto the substrate support portion; and a control unit for controlling the operation of a plasma power supply unit and a flow rate regulator for adjusting the supply amount of process gas.

Description

Technical Field

[0001] The present invention relates to the manufacture of semiconductors, and more particularly to a substrate processing apparatus using a plasma source.

Background Art

[0002] In a substrate processing apparatus for forming semiconductor elements, an apparatus and a process are being studied in which plasma is not directly formed in a process chamber, but activated reactants, such as radicals, are supplied into the process chamber using a plasma source outside the process chamber, for example, a remote plasma generator, to perform substrate processing. When using such a remote plasma generator, desired reactants can be generated and supplied to the process chamber, and since plasma is not directly formed in the process chamber, it is possible to prevent plasma damage from occurring on the substrate.

[0003] Furthermore, in order to shorten the path through which radicals generated by a remote plasma generator are supplied onto a substrate, a structure in which a plasma source is coupled to a gas injection portion of a process chamber is being studied. According to such a structure, the process efficiency can be increased by increasing the activation ratio of radicals supplied from the plasma source onto the substrate.

[0004] However, the above-described remote plasma generator or plasma source has a problem in that the supply of radicals to a circular substrate is not uniform. That is, when the radicals supplied to the upper part of the substrate are not uniformly supplied to the central part and the edge region of the substrate, there arises a problem that the uniformity of the thin film deposited on the upper part of the substrate decreases.

Summary of the Invention

Problems to be Solved by the Invention

[0005] The present invention aims to solve the aforementioned problems and provides a substrate processing apparatus that can adjust the thickness of a thin film by controlling the amount of radicals supplied to each region of the substrate, thereby either uniformly supplying radicals to the entire surface of the substrate or supplying them differently to different regions of the substrate. However, these problems are illustrative and do not limit the scope of the present invention. [Means for solving the problem]

[0006] A substrate processing apparatus according to one aspect of the present invention, for solving one of the technical problems of the present invention described above, comprises a process chamber having a reaction space formed inside; a chamber lid covering the upper part of the process chamber; a substrate support portion disposed within the process chamber to support at least one substrate; a plasma source assembly including a first plasma source coupled on the chamber lid and having a first toroidal channel having a first radius from the center of the chamber lid, a second plasma source having a second toroidal channel having a smaller second radius than the first plasma source, and an insulating member provided between the first plasma source and the second plasma source and the chamber lid, and the substrate support portion The plasma source assembly includes a gas injection unit formed opposite to the plasma source assembly and located at the bottom of the plasma source assembly, with a gas injection plate formed thereon for injecting process gas activated by the plasma source assembly onto the substrate support; a plasma power supply unit for supplying plasma power to the first plasma source and the second plasma source; and a control unit for controlling the operation of a flow rate regulator for adjusting the amount of process gas supplied from outside the process chamber, wherein the first plasma source is provided with a first opening through which the process gas activated by the first plasma source is discharged, and the second plasma source includes a second opening through which the process gas activated by the second plasma source is discharged, and the first opening and the second opening are formed at the same height.

[0007] A substrate processing apparatus according to one aspect of the present invention, for solving one of the technical problems of the present invention described above, comprises a process chamber having a reaction space formed inside; a chamber lid covering the upper part of the process chamber; a substrate support portion disposed in the process chamber to support at least one substrate; a gas exhaust plate coupled on the chamber lid; a first plasma source coupled on the gas exhaust plate to supply activated process gas to the reaction space and having a first toroidal channel having a first radius; a second plasma source having a second toroidal channel having a smaller second radius than the first plasma source; an insulating member provided between the first plasma source and the second plasma source and the gas exhaust plate; and a plasma source assembly including the substrate support The plasma source assembly includes a gas injection unit formed at the lower part of the plasma source assembly, facing the holding portion, and having a gas injection plate formed thereon for injecting process gas activated by the plasma source assembly onto the substrate support portion; a plasma power supply unit for supplying plasma power to the first plasma source and the second plasma source; and a control unit for controlling the operation of a flow rate regulator for adjusting the amount of process gas supplied from outside the process chamber, wherein the first plasma source is provided with a first opening through which the process gas activated by the first plasma source is discharged, and the second plasma source includes a second opening through which the process gas activated by the second plasma source is discharged, and the first opening and the second opening are formed at the same height.

[0008] According to the substrate processing apparatus, the first plasma source includes a first reaction body in which the plurality of first body portions are arranged such that the plurality of first gas diffusion spaces are formed inside each of the first body portions, and the plurality of first insulating portions are coupled between the plurality of first body portions, and the plurality of first body portions are arranged such that the plurality of first gas diffusion spaces form the first toroidal channel as a whole; a plurality of first magnetic cores are arranged to surround the first reaction body and to be spaced apart from each other along the first toroidal channel; and a plurality of first windings are arranged to surround the plurality of first magnetic cores and are powered by the plasma power supply to induce magnetic force in the plurality of first magnetic cores, and the insulating member may include a plurality of first insulating members coupled to at least one surface of the first reaction body.

[0009] According to the substrate processing apparatus, the first reaction body may include a plurality of first-first body portions forming at least a portion of the first toroidal channel, a plurality of first-second body portions forming on the sides of the plurality of first-first body portions and to which the plurality of first insulating portions are coupled to the outside, a plurality of first gas inlets formed by penetrating at least a portion of the plurality of first-first body portions so that process gas supplied from the outside flows into the plurality of first gas diffusion spaces, and a plurality of first openings formed in at least a portion of the plurality of first-first body portions for discharging the activated process gas from the first reaction body.

[0010] According to the substrate processing apparatus, the second plasma source may include a second reaction body formed inward from the first reaction body and having a second gas diffusion space formed inside, and a second insulating portion coupled to the second body, wherein the second body portion is arranged such that the second gas diffusion space as a whole forms the second toroidal channel; a second magnetic core surrounding the second reaction body and positioned in a portion of the second toroidal channel; a second winding arranged to surround the second magnetic core and supplied with power from the plasma power supply to induce a magnetic field in the second magnetic core; and a second insulating member coupled to at least one surface of the second reaction body.

[0011] According to the substrate processing apparatus, the second reaction body may include a second-first body portion that forms part of the second toroidal channel, a second-second body portion that is part of the second toroidal channel and is formed to be connected to the second-first body portion and to which the second insulating portion is coupled externally, at least one second gas inlet formed by penetrating at least a part of the second-first body portion so that the process gas flows into the second gas diffusion space, and at least one second opening formed in at least a part of the second-first body portion for discharging the activated process gas from the second reaction body.

[0012] According to the substrate processing apparatus, the gas exhaust plate may include a plurality of first gas outlets formed at positions corresponding to the first opening to supply process gas activated by the first plasma source to the gas injection unit, and at least one second gas outlet formed at a position corresponding to the second opening to supply process gas activated by the second plasma source to the gas injection unit.

[0013] The substrate processing apparatus described above is characterized in that each of the first gas outlet and the second gas outlet is formed in the form of a plurality of holes.

[0014] According to the substrate processing apparatus, the control unit can control the operation of a first flow rate regulator that adjusts the amount of process gas supplied to the first plasma source, and a second flow rate regulator that adjusts the amount of process gas supplied to the second plasma source.

[0015] According to the substrate processing apparatus, the control unit can control the operation of the first flow regulator and the second flow regulator so that a larger amount of the process gas is activated in the first plasma source than in the second plasma source.

[0016] According to the substrate processing apparatus, the plasma power supply unit may include a first power supply unit that applies RF power to the first plasma source and a second power supply unit that applies RF power to the second plasma source.

[0017] According to the substrate processing apparatus, the control unit can control the power applied to the second power supply unit to be greater than the power applied to the second power supply unit, so that a larger amount of the process gas is activated in the first plasma source than in the second plasma source. [Effects of the Invention]

[0018] According to some embodiments of the present invention described above, a substrate processing apparatus can be provided that can adjust the thickness of a thin film deposited on a substrate by controlling the amount of gas supplied to the plasma source or the plasma power supplied to the plasma source for each region, thereby supplying uniform radicals to the entire substrate or by controlling the amount of radicals supplied to each region, so as to adjust the amount of activated radicals supplied according to the region of the substrate. Of course, the scope of the present invention is not limited by such effects. [Brief explanation of the drawing]

[0019] [Figure 1] This is a schematic diagram showing a substrate processing apparatus according to one embodiment of the present invention. [Figure 2] It is a schematic diagram showing a substrate processing apparatus according to another embodiment of the present invention. [Figure 3] It is a schematic top view showing a plasma source assembly according to an embodiment of the present invention. [Figure 4] It is a schematic cutaway perspective view showing the plasma source assembly of FIG. 2. [Figure 5] It is a perspective view showing a first plasma source according to an embodiment of the present invention. [Figure 6] It is a perspective view showing a second plasma source according to an embodiment of the present invention. [Figure 7] It is a top view showing a gas discharge plate according to an embodiment of the present invention. [Figure 8] It is a schematic diagram showing the power transmission of a first plasma source and a second plasma source according to an embodiment of the present invention. [Figure 9] It is a schematic diagram showing the supply of process gas of a first plasma source and a second plasma source according to another embodiment of the present invention.

Embodiments for Carrying Out the Invention

[0020] Hereinafter, various preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0021] The embodiments of the present invention are provided to more fully explain the present invention to those with ordinary knowledge in the relevant technical field. The following embodiments can be deformed into various other forms, and the scope of the present invention is not limited to the following embodiments. Rather, these embodiments are provided to further enrich and complete the present disclosure and to fully convey the idea of the present invention to those skilled in the art.

[0022] Also, in the drawings, the thickness and size of each layer are exaggerated for the convenience of explanation and clarity. Furthermore, embodiments of the idea of the present invention should not be construed as being limited to a specific shape of the region shown in this specification, and for example, it must include changes in shape caused by manufacturing.

[0023] Figure 1 is a schematic diagram showing a substrate processing apparatus according to one embodiment of the present invention; Figure 2 is a schematic diagram showing a substrate processing apparatus according to another embodiment of the present invention; Figure 3 is a schematic top view showing a plasma source assembly 3000 according to one embodiment of the present invention; and Figure 4 is a schematic cut perspective view showing the plasma source assembly 3000 of Figure 2.

[0024] First, a substrate processing apparatus according to one embodiment of the present invention may broadly include a process chamber 1000, chamber lids 1100a and 1100b, a substrate support section 2000, a plasma source assembly 3000, a gas injection section 4000, and a control section 8000.

[0025] As shown in Figure 1, the process chamber 1000 may have a reaction space A formed inside it. The process chamber 1000 may be connected to a vacuum pump 1300 via an exhaust section 1200 to form a vacuum atmosphere. Furthermore, the process chamber 1000 may include an inlet and outlet for loading the substrate S into or unloading it from the reaction space A, and a gate (not shown) for opening and closing it.

[0026] As shown in Figures 1 and 2, the chamber lids 1100a and 1100b may be formed to cover the upper part of the process chamber 1000.

[0027] Specifically, the chamber lids 1100a and 1100b are formed to cover at least a portion of the process chamber 1000, and multiple holes, slits, or openings are provided through at least a portion of them, allowing the process gas activated by the plasma source assembly 3000 coupled to the upper part to flow to the lower part of the chamber lids 1100a and 1100b.

[0028] For example, the chamber lid 1100a may be coupled to the upper part of the process chamber 1000, with a gas injection plate 4100 positioned between it and the process chamber 1000.

[0029] In this case, as shown in Figure 1, the chamber lid 1100a may be coupled to the first plasma source 3100 and the second plasma source 3200 at its upper part, and at least one of the plurality of holes, slits, and openings may be formed at positions corresponding to the first plasma source 3100 and the second plasma source 3200 so that process gas activated by the first plasma source 3100 and the second plasma source 3200 can be injected downward.

[0030] Alternatively, as shown in Figure 2, the chamber lid 1100b may have a gas exhaust plate 7000 coupled to its upper part, with a first plasma source 3100 and a second plasma source 3200 coupled to the upper part of the gas exhaust plate 7000.

[0031] In this case, the chamber lid 1100b may be formed as an opening so that process gas activated by the first plasma source 3100 and the second plasma source 3200 coupled to the upper gas discharge plate 7000 is injected in the direction of the gas injection plate 4000.

[0032] As shown in Figure 1, the substrate support 2000 may be coupled to the process chamber 1000 to support at least one or more substrates S within the reaction space A. For example, the substrate support 2000 may be installed in the process chamber 1000 facing the gas injection unit 4000. Furthermore, the substrate support 2000 may include a heater (not shown) inside for heating the substrate S. Since the substrate support 2000 is configured to support the substrate S, it may also be called a substrate mounting unit, susceptor, substrate holder, etc.

[0033] The shape of the upper plate of the substrate support section 2000 generally corresponds to the shape of the substrate S, but is not limited to this, and can be provided in a variety of shapes to ensure stable mounting of the substrate S. Furthermore, a shaft 1200 is connected to the substrate support section 2000, and the shaft 1200 can be connected to an external motor so that it can be raised and lowered. Optionally, means for maintaining airtightness, such as a bellows tube, may be connected between the shaft 1200 and the process chamber 1000.

[0034] In some embodiments, the substrate support portion 2000 may further include electrostatic electrodes (not shown) for applying an electrostatic force to the substrate S and fixing it to the upper part thereof. In this case, the electrostatic electrodes can generate an electrostatic force using DC power.

[0035] As shown in Figure 1, the gas injection unit 4000 may be coupled to the process chamber 1000 to inject process gas supplied from outside the process chamber 1000 into the reaction space A. For example, the gas injection unit 4000 may be coupled to the upper part of the process chamber 1000 so as to face the substrate support unit 2000. The gas injection unit 4000 can supply process gas, such as a source gas, reaction gas, or inert gas, onto the substrate S in the reaction space A.

[0036] The gas injection unit 4000 may have a distribution plate 4100 formed therein for injecting process gas activated by the plasma source assembly 3000 onto the substrate support unit 2000.

[0037] Specifically, the gas injection plate 4100 may be formed at the bottom of the plasma source assembly 3000 and may include a gas injection plate 4100 for injecting process gas activated by the plasma source assembly 3000 onto the substrate support 2000. The gas injection plate 4100 may have a number of injection holes formed on its lower side. Optionally, the gas injection unit 4000 may further include a middle plate, such as a blocker plate, between the plasma source and the gas injection plate 4100 for injecting gas.

[0038] The plasma source assembly 3000 is coupled to the process chamber 1000 above the substrate support 2000 and is for supplying activated process gas to the reaction space A, and may be coupled, for example, to the chamber lid 1100b that covers the top of the process chamber 1000.

[0039] As shown in Figure 1, the plasma source assembly 3000 may include a first plasma source 3100 coupled on the chamber lid 1100a to supply activated process gas to the reaction space A, having a first toroidal channel 3114 formed therein with a first radius from the center of the chamber lid 1100a, a second plasma source 3200 having a second toroidal channel 3214 formed therein with a second radius smaller than that of the first plasma source 3100, and insulating members provided between the first plasma source 3100 and the second plasma source 3200 and the chamber lid 1100a.

[0040] Alternatively, as shown in Figure 2, the plasma source assembly 3000 may include a gas exhaust plate 7000 coupled on the chamber lid 1100b, a first plasma source 3100 having a first toroidal channel 3114 with a first radius formed therein to supply activated process gas to the reaction space A, a second plasma source 3200 having a second toroidal channel 3214 with a second radius smaller than that of the first plasma source 3100, and the insulating member provided between the first plasma source 3100 and the second plasma source 3200 and the gas exhaust plate 7000.

[0041] In this case, the insulating member may include the first insulating members 3170a, 3170b, 3170c and the second insulating member 3270.

[0042] Specifically, the first plasma source 3100, coupled to the upper part of the process chamber 1000, may be arranged to surround the second plasma source 3200. For example, the second plasma source 3200 may be coupled to the upper part of the process chamber 1000 and arranged in a donut shape of the second radius in the central part of the upper plate of the gas injection unit 4000, and the first plasma source 3100 may be arranged in a donut shape of the first radius surrounding the donut shape of the second plasma source 3200. Such a plasma source assembly 3000 allows activated process gas to be injected over the entire central and edge regions of the gas injection unit 4000.

[0043] Figure 5 is a perspective view showing a first plasma source 3100 according to one embodiment of the present invention, Figure 6 is a perspective view showing a second plasma source 3200 according to one embodiment of the present invention, and Figure 7 is a top view showing a gas exhaust plate 7000 according to one embodiment of the present invention.

[0044] As shown in Figures 3 and 5, the first plasma source 3100 may include a first reaction body 3110, a plurality of first magnetic cores 3130a, 3130b, 3130c, a plurality of first windings 3150a, 3150b, 3150c, and a plurality of first insulating members 3170a, 3170b, 3170c.

[0045] The first reaction body 3110 may include a first toroidal channel 3114, a plurality of first body portions, and a plurality of first insulating portions 3116a, 3116b, 3116c.

[0046] The first reaction body 3110 can be configured such that the plurality of first gas diffusion spaces 3114a, 3114b, and 3114c collectively form a first toroidal channel 3114.

[0047] As shown in Figure 4, the first reaction body 3110 may be formed by joining a plurality of first body parts, and each of the plurality of first body parts may have a first gas diffusion space 3114a, 3114b, and 3114c formed inside it.

[0048] Specifically, in the first reaction body 3110, the plurality of first body parts may be arranged such that the first gas diffusion spaces 3114a, 3114b, and 3114c as a whole form the first toroidal channel 3114. More specifically, the plurality of first body parts may be formed to correspond to structures obtained by dividing the overall shape of the first toroidal channel 3114, thereby limiting the first toroidal channel 3114 as a whole. For example, if the first toroidal channel 3114 is formed in a donut shape as a whole, the plurality of first body parts may be formed to correspond to structures obtained by dividing such donut shape into multiple parts.

[0049] For example, as shown in Figure 5, the first reaction body 3110 is composed of three first body sections, a fluid channel 3114a may be formed inside one of the multiple first body sections, a fluid channel 3114b may be formed inside another of the multiple first body sections, and a fluid channel 3114c may be formed inside the remaining one of the multiple first body sections.

[0050] That is, the first reaction body 3110 may be formed by a plurality of first body parts, for example, the plurality of first body parts may be formed by the combination of a plurality of first-first body parts 3111a, 3111b, 3111c and a plurality of first-second body parts 3112a, 3112b, 3112c.

[0051] The cross-sectional shapes of the first gas diffusion spaces 3114a, 3114b, and 3114c can be various shapes, such as circles, ellipses, semicircles, and polygons.

[0052] In some embodiments, the interiors of the plurality of first body portions may be formed by coating a conductive material with an insulating material. For example, the plurality of first body portions may be formed by coating a metal with an insulator, such as a metal oxide, metal nitride, or a metal compound such as a nickel alloy (Ni alloy).

[0053] The first reaction body 3110 may be separated or formed as a single body and can be fabricated with a 3D printer.

[0054] The first reaction body 3110 may include a plurality of first-first body sections 3111a, 3111b, 3111c, a plurality of first-second body sections 3112a, 3112b, 3112c, a plurality of first gas inlets 3118a, 3118b, 3118c, and a plurality of first openings 3119a, 3119b, 3119c.

[0055] As shown in Figure 5, the multiple first-first body portions 3111a, 3111b, and 3111c can form at least a portion of the first toroidal channel 3114 and are tubular structures that form a flow path inside so as to form a portion of the first toroidal channel 3114.

[0056] Multiple first-second body portions 3112a, 3112b, and 3112c are formed on the sides of multiple first-first body portions 3111a, 3111b, and 3111c, and are tubular structures that form internal flow channels so that multiple first insulating portions 3116a, 3116b, and 3116c are bonded to the outside and the other parts of the first toroidal channel 3114 can be formed.

[0057] The multiple first-first body portions 3111a, 3111b, 3111c may have a first length and a second width, and the multiple first-second body portions 3112a, 3112b, 3112c may have a second length and a second width. In this case, the first length may be greater than the second length, and the first width may be greater than the second width. That is, the length and width of the multiple first-second body portions 3112a, 3112b, 3112c may be formed to be smaller than the length and width of the multiple first-first body portions 3111a, 3111b, 3111c, and the multiple first magnetic cores 3130a, 3130b, 3130c may be bonded to the outer circumferential surfaces of the multiple first-second body portions 3112a, 3112b, 3112c.

[0058] In some embodiments, flanges 2126 and 2127 can be connected to the ends of multiple first-second body portions 3112a, 3112b, and 3112c. For example, one side of multiple first-first body portions 3111a, 3111b, and 3111c can be connected to one flange 2127 on one side of multiple first-second body portions 3112a, 3112b, and 3112c, and first insulating portions 3116a, 3116b, and 3116c can be connected between the flange 2126 on the other side of multiple first-second body portions 3112a, 3112b, and 3112c and the other side of multiple first-first body portions 3111a, 3111b, and 3111c, respectively.

[0059] In the first reaction body 3110, the first gas diffusion spaces 3114a, 3114b, and 3114c can communicate with each other and with the flow paths in the flanges 2126, 2127 and the first insulating parts 3116a, 3116b, and 3116c, so that the first toroidal channel 3114 is formed throughout the first reaction body 3110.

[0060] As shown in Figures 2 and 4, a plurality of first gas inlets 3118a, 3118b, and 3118c may be formed in at least a portion of a plurality of first-first body portions 3111a, 3111b, and 3111c.

[0061] Specifically, multiple first gas inlets 3118a, 3118b, 3118c may be formed by penetrating at least a portion of multiple first-first body sections 3111a, 3111b, 3111c so that process gas supplied from the outside flows into multiple first gas diffusion spaces 3114a, 3114b, 3114c. For example, multiple first gas inlets 3118a, 3118b, 3118c may be formed on the upper part of multiple first-first body sections 3111a, 3111b, 3111c.

[0062] The positions in which the multiple first gas inlets 3118a, 3118b, and 3118c are formed are not limited and may be formed on the sides of the multiple first-first body portions 3111a, 3111b, and 3111c.

[0063] As shown in Figures 3 and 4, the multiple first openings 3119a, 3119b, and 3119c are formed in at least a portion of the multiple first-first body portions 3111a, 3111b, and 3111c, allowing the activated process gas to be discharged from the first reaction body 3110.

[0064] For example, multiple first openings 3119a, 3119b, 3119c may be formed on the lower surfaces of multiple first-first body portions 3111a, 3111b, 3111c. The process gas that flows into the first toroidal channel 3114 through multiple first gas inlets 3118a, 3118b, 3118c can be activated and discharged to the bottom of the first plasma source 3100 through multiple first openings 3119a, 3119b, 3119c. For example, the multiple first openings 3119a, 3119b, 3119c may be formed in the shape of slits.

[0065] For example, as shown in Figure 4, the multiple first openings 3119a, 3119b, 3119c may be formed on the lower surfaces of the multiple first-first body portions 3111a, 3111b, 3111c so that the activated process gas, i.e., radicals, can be supplied below the first plasma source 3100.

[0066] As shown in Figures 4 and 5, the multiple first insulating members 3170a, 3170b, and 3170c can be bonded to at least one surface of the first reaction body 3110. Specifically, the multiple first insulating members 3170a, 3170b, and 3170c are formed in a shape that can cover the multiple first body portions, and openings corresponding to the multiple first openings 3119a, 3119b, and 3119c are formed so that the activated process gas can be discharged through the openings of the multiple first insulating members 3170a, 3170b, and 3170c.

[0067] Furthermore, as shown in Figures 3 and 5, the first reaction body 3110 may include a plurality of first insulating parts 3116a, 3116b, and 3116c coupled between the plurality of first body parts.

[0068] The first insulating parts 3116a, 3116b, and 3116c can be coupled between the plurality of first body parts. The first insulating parts 3116a, 3116b, and 3116c can be interposed between the plurality of first body parts such that they are separated from each other without being electrically directly connected.

[0069] The first insulating parts 3116a, 3116b, and 3116c may have flow channels formed inside them so that the first gas diffusion spaces 3114a, 3114b, and 3114c within the plurality of first body parts are connected to each other. The first insulating parts 3116a, 3116b, and 3116c may be formed from a suitable insulating material, such as ceramic, oxide, nitride, or polymer resin.

[0070] As shown in Figures 3 and 5, the multiple first magnetic cores 3130a, 3130b, and 3130c may be arranged along the first toroidal channel 3114, spaced apart from each other, while each surrounding the first reaction body 3110.

[0071] For example, multiple first magnetic cores 3130a, 3130b, and 3130c may be arranged on each of the multiple first body portions.

[0072] Each of the multiple first magnetic cores 3130a, 3130b, and 3130c may be formed as a single closed structure or have a structure in which multiple divisions are joined together, and the multiple first magnetic cores 3130a, 3130b, and 3130c may include a magnetic material, such as a ferrite material.

[0073] As shown in Figure 5, multiple first windings 3150a, 3150b, and 3150c can be arranged to surround multiple first magnetic cores 3130a, 3130b, and 3130c. For example, winding 3150a can be arranged to surround magnetic core 3130a, winding 3150b can be arranged to surround magnetic core 3130b, and winding 3150c can be arranged to surround magnetic core 3130c.

[0074] Multiple first windings 3150a, 3150b, and 3150c can be powered by the plasma power supply unit 6000 to induce magnetic forces within the multiple first magnetic cores 3130a, 3130b, and 3130c. For example, if the multiple first windings 3150a, 3150b, and 3150c are wound in the width direction of the multiple first magnetic cores 3130a, 3130b, and 3130c, when power is applied to the multiple first windings 3150a, 3150b, and 3150c, magnetic forces can be induced within the multiple first magnetic cores 3130a, 3130b, and 3130c along their circumferential direction.

[0075] As shown in Figures 3 and 6, the second plasma source 3300 may include a second reaction body 3210, a second magnetic core 3230, a second winding 3250, and a second insulating member 3270.

[0076] The second reaction body 3210 may include a second toroidal channel 3214, a second body portion, and a second insulating portion 3216.

[0077] The second reaction body 3210 may be positioned such that the second gas diffusion space as a whole forms a second toroidal channel 3214.

[0078] As shown in Figure 6, the second reaction body 3210 may be formed in a second body portion, which is formed inward of the first reaction body 3110, and a second gas diffusion space may be formed inside it.

[0079] Specifically, in the second reaction body 3210, the second body portion may be arranged such that the second gas diffusion space as a whole forms the second toroidal channel 3214. More specifically, the second body portion may be formed to correspond to the overall shape of the second toroidal channel 3214, or to correspond to structures obtained by dividing the overall shape of the second toroidal channel 3214, so as to define the second toroidal channel 3214 as a whole.

[0080] For example, if the second toroidal channel 3214 is formed in an overall donut shape, the second body portion may be formed in such a donut shape or to correspond to a structure divided into multiple parts.

[0081] For example, as shown in Figures 3 and 6, the second reaction body 3210 is composed of two second body sections, and a second toroidal channel 3214 can be formed by creating a fluid flow path inside the second body sections.

[0082] That is, the second reaction body 3210 may be formed in the second body portion, for example, the second body portion may be formed by the bonding of the second-first body portion 3211 and the second-second body portion 3212, respectively.

[0083] The cross-sectional shape of the second gas diffusion space can have various shapes, such as a circle, an ellipse, a semicircle, or a polygon.

[0084] In some embodiments, the interior of the second body portion may be formed by coating a conductive material with an insulating material, similar to the plurality of first body portions. For example, an insulator, such as a metal oxide, metal nitride, or a metal compound such as a nickel alloy (Ni alloy), may be coated onto a metal.

[0085] The second reaction body 3210 may be separated or formed as a single body and can be fabricated with a 3D printer.

[0086] The second reaction body 3210 may include a second-first body section 3211, a second-second body section 3212, a second gas inlet 3218, and a second opening 3219.

[0087] As shown in Figure 6, the second-first body portion 3211 can form at least a portion of the second toroidal channel 3214 and is a tubular structure that forms a flow path inside so as to form a portion of the second toroidal channel 3214.

[0088] The second-second body portion 3212 is formed to connect with the second-first body portion 3211, has a second insulating portion 3216 coupled to its exterior, and is a tubular structure that forms a flow path inside so as to form the other part of the second toroidal channel 3214.

[0089] The second-first body portion 3211 may have a third length and a third width, and the second-second body portion 3212 may have a fourth length and a fourth width. In this case, the third length may be greater than the fourth length, and the third width may be greater than the fourth width. That is, the length and width of the second-second body portion 3212 may be formed to be smaller than the length and width of the second-first body portion 3211, so that the second magnetic core 3230 can be bonded to the outer circumferential surface of the second-second body portion 3212.

[0090] In some embodiments, a flange may be attached to the end of the second-second body portion 3212.

[0091] In the second reaction body 3210, the second gas diffusion space can communicate with the flow path in the flange and the second insulating portion 3216 so that the second toroidal channel 3214 is formed throughout the second reaction body 3210.

[0092] As shown in Figures 3 and 6, the second gas inlet 3218 may be formed in at least a portion of the second-first body portion 3211.

[0093] Specifically, the second gas inlet 3218 may be formed by penetrating at least a portion of the second-first body portion 3211 so that process gas supplied from the outside flows into the second gas diffusion space. For example, the second gas inlet 3218 may be formed on the upper part of the second-first body portion 3211.

[0094] The position in which the second gas inlet 3218 is formed is not limited and may be formed on the side of the second-first body portion 3211.

[0095] As shown in Figures 4 and 6, the second opening 3219 is formed in at least a portion of the second-first body portion 3211, allowing the activated process gas to be discharged from the second reaction body 3210.

[0096] For example, a second opening 3219 may be formed on the lower surface of the second-first body portion 3211. The process gas that flows into the second toroidal channel 3214 via the second gas inlet 3218 can be activated and discharged to the lower part of the second plasma source 3200 via the second opening 3219. For example, the second opening 3219 may be formed in the shape of a slit.

[0097] For example, the second opening 3219 may be formed on the lower surface of the second-first body portion 3211 so as to allow the activated process gas, i.e., radicals, to be supplied below the second plasma source 3200, as shown in Figure 5.

[0098] As shown in Figures 4 and 6, the second insulating member 3270 can be bonded to at least one surface of the second reaction body 3210. Specifically, the second insulating member 3270 is formed in a shape that can cover the second body portion, and an opening corresponding to the second opening 3219 is formed therein, so that the activated process gas can be discharged through the opening of the second insulating member 3270.

[0099] Furthermore, as shown in Figures 2 and 5, the second reaction body 3210 may include a second insulating portion 3216 coupled to the second body portion.

[0100] The second insulating portion 3216 can be interposed between the second body portions such that the ends of the second body portions are not electrically directly connected to each other and are separated from each other.

[0101] The second insulating portion 3216 may have a flow path formed inside it so that the second gas diffusion spaces within the second body portion are connected to each other. The second insulating portion 3216 may be formed of a suitable insulating material, such as ceramic, oxide, nitride, polymer resin, etc.

[0102] As shown in Figures 2 and 5, the second magnetic core 3230 may be positioned within a portion of the second toroidal channel 3214, surrounding the second reaction body 3210.

[0103] For example, the second magnetic core 3230 may be placed on the second body portion.

[0104] The second magnetic core 3230 may be formed as a single closed structure or may have a structure in which multiple divisions are joined together, and the second magnetic core 3230 may include a magnetic material, such as a ferrite material.

[0105] As shown in Figure 6, the second winding 3250 may be arranged to surround the second magnetic core 3230.

[0106] The second winding 3250, like the multiple first windings 3150a, 3150b, and 3150c, can be powered by the plasma power supply unit 6000 to induce a magnetic field within the second magnetic core 3230. For example, if the second winding 3250 is wound in the width direction of the second magnetic core 3230, when power is applied to the second winding 3250, a magnetic field can be induced within the second magnetic core 3230 along its circumferential direction.

[0107] In the plasma source assembly 3000 according to the present invention, the number of the plurality of first body parts of the first plasma source 3100 is shown exemplarily and may be selected as two or more. Furthermore, the number of the plurality of first magnetic cores 3130a, 3130b, 3130c, the plurality of first windings 3150a, 3150b, 3150c, and the plurality of first insulating parts 3116a, 3116b, 3116c can be varied according to the number of the plurality of first body parts.

[0108] According to the first plasma source 3100, when power is applied from the plasma power supply unit 6000 to multiple first windings 3150a, 3150b, and 3150c, a magnetic force is induced in multiple first magnetic cores 3130a, 3130b, and 3130c. This induced magnetic force can induce a current in the first toroidal channel 3114 that penetrates the interior of the multiple first magnetic cores 3130a, 3130b, and 3130c. This current can activate a gas within the first toroidal channel 3114, potentially forming a plasma atmosphere.

[0109] In the first plasma source 3100, a structure in which magnetic forces are induced in multiple first magnetic cores 3130a, 3130b, and 3130c from the currents flowing through multiple first windings 3150a, 3150b, and 3150c, and a current is induced in the first toroidal channel 3114 by these induced magnetic forces, can correspond to the principle of a transformer, and the second plasma source 3200 can be driven in the same manner.

[0110] From this perspective, the plasma source of the present invention may also be called a transformer-coupled plasma (TCP) device or a magnetic induction plasma device.

[0111] In some embodiments, the multiple first windings 3150a, 3150b, and 3150c can function as primary coils, and the first toroidal channel 3114, limited by the multiple first body portions, can function as a secondary coil. Thus, the multiple first windings 3150a, 3150b, and 3150c can be referred to as primary coils or primary windings, and the current flowing through the multiple first windings 3150a, 3150b, and 3150c can be referred to as primary current. Furthermore, the current induced within the first toroidal channel 3114 can also be referred to as secondary current.

[0112] When a secondary current is induced in the first toroidal channel 3114, the voltage can be applied almost entirely across the first insulating sections 3116a, 3116b, and 3116c. Thus, the ignition of the plasma in the first toroidal channel 3114 can begin within the first insulating sections 3116a, 3116b, and 3116c, and the second plasma source 3200 can also be ignited in the same manner.

[0113] In one embodiment of the present invention, the substrate processing apparatus can be configured such that the supply surface of the first plasma source 3100 and the supply surface of the second plasma source 3200, from which the process gas is supplied to the gas injection unit 4000, are formed on the same plane.

[0114] As shown in Figures 1 and 2, in a plasma source assembly 3000 coupled to the upper part of the process chamber 1000, a plurality of first openings 3119a, 3119b, 3119c of the first plasma source 3100 are formed on the lower surface of the first plasma source 3100, and a second opening 3219 of the second plasma source 300 is formed on the lower surface of the second plasma source 300, so that the process gas can be supplied downwards to the plasma source.

[0115] Specifically, a gas exhaust plate 7000 can be coupled to the lower part of the first plasma source 3100 and the second plasma source 300 so as to correspond to a plurality of first openings 3119a, 3119b, 3119c and a second opening 3219.

[0116] As shown in Figures 2 and 4, the gas exhaust plate 7000 can be coupled to the first plasma source 3100 and the second plasma source 3200.

[0117] The gas discharge plate 7000 may have a plurality of discharge ports formed at positions corresponding to the first openings 3119a, 3119b, and 3119c for discharging the process gas activated by the first plasma source 3100 from the first plasma source 3100, and the second opening 3219 for discharging the process gas activated by the second plasma source 3200 from the second plasma source 3200.

[0118] The gas discharge plate 7000 may have multiple holes formed for discharging process gas activated in the first toroidal channel 3114 and the second toroidal channel 3214.

[0119] The gas discharge plate 7000 allows the activated process gas, i.e., radicals, to be discharged downward through the plurality of holes.

[0120] The gas discharge plate 7000 may have the plurality of discharge ports formed thereon, which may include a plurality of first gas discharge ports 7100 and at least one second gas discharge port 7200.

[0121] Multiple first gas outlets 7100 are formed through the gas outlet plate 7000 and can be configured to supply process gas activated in the first plasma source 3100 from the first gas diffusion spaces 3114a, 3114b, and 3114c to the lower part of the multiple first body sections.

[0122] At least one second gas outlet 7200 may be formed through the gas outlet plate 7000 and configured to supply a process gas activated in the second plasma source 3200 from the second gas diffusion space to the lower part of the second body.

[0123] In this case, the multiple first gas outlets 7100 and at least one second gas outlet 7200 may be formed at the same height.

[0124] The multiple first gas outlets 7100a, 7100b, 7100c and at least one second gas outlet 7200 can penetrate in a cylindrical, conical, or pyramidal shape. That is, they can penetrate from the inside to the outside of the multiple first and second body portions with the same size, or they can penetrate so that the holes gradually increase in size.

[0125] As a result, the radicals are discharged to the outside of the plurality of first body parts and the second body parts, preventing particles from flowing into the first gas diffusion spaces 3114a, 3114b, 3114c and the second gas diffusion space inside the plurality of first body parts and the second body parts, and the amount of radicals discharged can be controlled according to the size and shape of the plurality of first gas outlets 7100a, 7100b, 7100c and at least one second gas outlet 7200.

[0126] The control unit 8000 can control at least one plasma power supply unit 6000 so as to control the formation of plasma in the first plasma source 3100 and the second plasma source 3200. Alternatively, the control unit 8000 can control a flow regulator and a plurality of control valves so as to regulate the supply of process gas flowing from a process gas supply unit 5000 formed outside the process chamber 1000 into the first plasma source 3100 and the second plasma source 3200. A detailed description of the control unit 8000 that controls the plasma power supply unit 6000 and the plurality of control valves will be given later.

[0127] Figure 8 is a schematic diagram showing power transfer between the first plasma source 3100 and the second plasma source 3200 according to one embodiment of the present invention, and Figure 9 is a schematic diagram showing the supply of process gas between the first plasma source 3100 and the second plasma source 3200 according to another embodiment of the present invention.

[0128] A substrate processing apparatus according to one embodiment of the present invention may include a plasma power supply unit 6000 and an ignition unit.

[0129] As shown in Figure 8, the plasma power supply unit 6000 may include a power supply device that can supply RF power to multiple first windings 3150a, 3150b, 3150c and second winding 3250 via a resonant circuit unit (not shown), etc. For example, the plasma power supply unit 6000 may include a switching mode power supply (SMPS).

[0130] The plasma power supply unit 6000 may include a first power supply unit 6100 and a second power supply unit 6200. For example, the first power supply unit 6100 can supply power to a plurality of first windings 3150a, 3150b, and 3150c, and the second power supply unit 6200 can supply power to the second winding 3250.

[0131] The ignition unit may include a plurality of flanges and a plurality of switches connected to the plurality of first body portions on both sides of the first insulating portions 3116a, 3116b, and 3116c.

[0132] In one embodiment of the present invention, the first plasma source 3100 and the second plasma source 3200 of the substrate processing apparatus can be supplied with process gas from a process gas supply unit 5000 formed outside the process chamber 1000.

[0133] For example, as shown in Figures 1 and 2, the same process gas can be supplied from a single-unit process gas supply unit 5000 to a first plasma source 3100 via a first flow regulator 5110 and to a second plasma source 3200 via a second flow regulator 5210.

[0134] The process gas supply unit 5000 may be individually formed to include the source gas, reaction gas, and inert gas so that they can be supplied separately. In this case, when the plasma source is ignited, the process gas may be supplied from a gas supply unit containing an inert gas such as Ar, He, H2, or N2 to the process gas supply unit 5000.

[0135] Furthermore, after ignition, the process gas supply unit 5000 may supply the source gas (or reaction gas) and inert gas individually or simultaneously from each gas supply unit while maintaining the plasma.

[0136] In another embodiment of the present invention, the process gas supply unit 5000 of the substrate processing apparatus consists of a first process gas supply unit 5100 and a second process gas supply unit 5200, which are connected to the first plasma source 3100 and the second plasma source 3200 respectively, and can supply different gases to each other.

[0137] For example, as shown in Figure 9, the first plasma source 3100 can receive a first process gas from the first process gas supply unit 5100, and the second plasma source 3200 can receive a second process gas, different from the first process gas, from the second process gas supply unit 5200.

[0138] In this configuration, the first process gas supply unit 5100 and the second process gas supply unit 5200 are connected to the first plasma source 3100 and the second plasma source 3200, respectively, so that the first process gas can be supplied to the first plasma source 3100 and the second process gas can be supplied to the second plasma source 3200.

[0139] Furthermore, the first-stage gas supply unit 5100 and the second-stage gas supply unit 5200 are connected to the first plasma source 3100 and the second plasma source 3200 by the same piping, and a first flow regulator 5110 and a second flow regulator 5210 may be installed. This allows the first-stage gas to be selectively supplied to the first plasma source 3100 and the second plasma source 3200, and the second-stage gas to be selectively supplied to the first plasma source 3100 and the second plasma source 3200.

[0140] A substrate processing apparatus according to one embodiment of the present invention may include a flow regulator and a plurality of control valves for controlling the amount of process gas supplied from a process gas supply unit 5000 formed outside the process chamber.

[0141] Specifically, as shown in Figures 1, 2, and 9, the multiple first gas inlets 3118a, 3118b, 3118c and the second gas inlet 318 of the first plasma source 3100 and the second plasma source 3200 are each connected by piping for receiving the process gas from the process gas supply unit 5000, and valves for controlling the flow of gas may be formed in each of the pipes.

[0142] The plurality of control valves may include a first flow regulator 5110 formed in piping connected to the process gas supply unit 5000 and the first plasma source 3100, which regulates the supply of process gas flowing into the first plasma source 3100.

[0143] For example, the first flow regulator 5110 can control the amount of process gas supplied to the multiple first gas inlets 3118a, 3118b, and 3118c connected to the first toroidal channel 3114. More specifically, the first flow regulator 5110 mainly controls the process gas supplied from the process gas supply unit 5000 to the first plasma source 3100, and the first-1 control valves 5111a, 1-2 control valves 5111b, and 1-3 control valves (not shown), which are connected to the multiple first gas inlets 3118a, 3118b, and 3118c formed in the first reaction body 3110, respectively, can adjust the amount of process gas supplied to the multiple first body parts.

[0144] The plurality of control valves may include a second flow regulator 5210 formed in piping connected to the process gas supply unit 5000 and the second plasma source 3200, which regulates the supply of process gas flowing into the second plasma source 3200. For example, the second flow regulator 5210 can control the amount of process gas supplied to the second gas inlet 3218 connected to the second toroidal channel 3214.

[0145] The plurality of control valves may be flow control valves that control the amount of process gas supplied, or they may be mass flow controllers that automatically control the flow rate of the gas.

[0146] As shown in Figures 1 and 2, the control unit 8000 can control at least one plasma power supply unit 6000 so as to control the formation of plasma in the first plasma source 3100 and the second plasma source 3200.

[0147] Specifically, the control unit 8000 can control the RF power supplied to the first plasma source 3100 and the second plasma source 3200 so that the process gas is activated more quickly in the second plasma source 3200 than in the first plasma source 3100.

[0148] For example, the RF power applied from the first power supply unit 6100 to the first plasma source 3100 can be controlled to be greater than the RF power applied from the second power supply unit 6200 to the second plasma source 3200.

[0149] Specifically, the control unit 6000 can increase the plasma density in the first toroidal channel 3114 by controlling the RF power supplied to the first plasma source 3100 to be greater than the RF power supplied to the second plasma source 3200.

[0150] Furthermore, increasing the RF power increases the RF current, which increases the primary current flowing through the coil. This allows the magnitude or density of the magnetic field formed in the multiple first magnetic cores 3130a, 3130b, and 3130c to increase relatively compared to the second plasma source 3100. Increasing the RF power and the voltage applied to the winding increases the plasma density relatively compared to the plasma density of the second plasma source 3100, thereby increasing the activation rate of the process gas.

[0151] As a result, the process gas activated by the first plasma source 3100 formed in the edge region of the substrate S can be formed faster than the process gas activated by the second plasma source 3200 formed in the central region.

[0152] The control unit 8000 can control the plurality of control valves so as to adjust the supply of process gas flowing from the process gas supply unit 5000 formed outside the process chamber 1000 to the first plasma source 3100 and the second plasma source 3200.

[0153] Specifically, the control unit 8000 can control the first flow regulator 5110 and the second flow regulator 5210 so that the amount of process gas supplied via the first flow regulator 5110 is greater than the amount of process gas supplied via the second flow regulator 5210.

[0154] For example, the control unit 8000 can control the switching ratio, flow rate, pressure, etc., of the first flow regulator 5110 so that the amount of process gas supplied to the first toroidal channel 3114 is greater than the amount of process gas supplied to the second toroidal channel 3214.

[0155] Thus, a larger amount of process gas may be activated in the second plasma source 3200 than in the first plasma source 3100, thereby supplying a larger amount of radicals to the edge region of the substrate S where the first plasma source 3100 is formed than to the central region where the second plasma source 3200 is formed.

[0156] At this time, the amount of process gas supplied to each of the multiple first body sections can be individually controlled by individually controlling the 1-1 control valve 5111a, 1-2 control valve 5111b, and 1-3 control valve (not shown), which are connected to the multiple first gas inlets 3118a, 3118b, and 3118c formed in the first reaction body 3110, respectively.

[0157] In the substrate processing apparatus according to the present invention, the first plasma source 3100 may be coupled to the upper part of the process chamber 1000 such that it is coupled to the upper part of a substrate support on which a plurality of substrates S are placed and rotated, and radicals are supplied toward at least one of the substrates S. In this case, the first plasma source 3100 may be formed above the substrate S that is to be deposited by radicals or that requires a reaction among the plurality of substrates S, and may be formed above two or more of the plurality of substrates S. For example, the first plasma source 3100 may be formed above the reaction gas supply unit, and the radicals can be discharged toward the substrate S passing beneath the first plasma source 3100.

[0158] Furthermore, a first plasma source 3100 and a second plasma source 3200 may be formed on the upper part of any one of the multiple substrates S.

[0159] The substrate processing apparatus described above may also be used as a thin-film deposition apparatus, such as an atomic layer deposition (ALD) apparatus or a chemical vapor deposition (CVD) apparatus.

[0160] According to the substrate processing apparatus, the amount of activated radicals supplied to the plasma source can be adjusted according to the region of the substrate by controlling the amount of gas supplied to the plasma source or the plasma power supplied to each region, thereby supplying a uniform amount of radicals to the entire region of the substrate, or by controlling the amount of radicals supplied to each region, thereby adjusting the thickness of the thin film deposited on the substrate.

[0161] Although the present invention has been described with reference to the embodiments shown in the drawings, these are merely illustrative, and a person with ordinary skill in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true scope of technical protection of the present invention must be determined by the technical idea of ​​the appended claims.

Claims

1. A process chamber in which a reaction space is formed inside, A chamber lid covering the upper part of the process chamber, A substrate support unit is disposed within the process chamber to support at least one or more substrates, A plasma source assembly comprising: a first plasma source coupled on the chamber lid and having a first toroidal channel having a first radius; a second plasma source having a second toroidal channel having a smaller second radius than the first plasma source; and an insulating member provided between the first plasma source, the second plasma source and the chamber lid, to supply activated process gas to the reaction space; A gas injection section is formed opposite the substrate support section and at the lower part of the plasma source assembly, and has a gas injection plate formed thereon for injecting process gas activated by the plasma source assembly onto the substrate support section, A plasma power supply unit that supplies plasma power to the first plasma source and the second plasma source, and a control unit for controlling the operation of a flow rate regulator for adjusting the amount of process gas supplied from outside the process chamber, Includes, A substrate processing apparatus characterized in that the first plasma source is provided with a first opening through which a process gas activated by the first plasma source is discharged, and the second plasma source includes a second opening through which a process gas activated by the second plasma source is discharged, and the first opening and the second opening are formed at the same height.

2. A process chamber in which a reaction space is formed inside, A chamber lid covering the upper part of the process chamber, A substrate support unit is disposed within the process chamber to support at least one or more substrates, A plasma source assembly comprising: a gas exhaust plate coupled on the chamber lid; a first plasma source coupled on the gas exhaust plate to supply activated process gas to the reaction space and having a first toroidal channel having a first radius; a second plasma source having a second toroidal channel having a smaller second radius than the first plasma source; and an insulating member provided between the first plasma source, the second plasma source and the gas exhaust plate; A gas injection section is formed opposite the substrate support section and at the lower part of the plasma source assembly, and has a gas injection plate formed thereon for injecting process gas activated by the plasma source assembly onto the substrate support section, A plasma power supply unit that supplies plasma power to the first plasma source and the second plasma source, and a control unit for controlling the operation of a flow rate regulator for adjusting the amount of process gas supplied from outside the process chamber, Includes, A substrate processing apparatus characterized in that the first plasma source is provided with a first opening through which a process gas activated by the first plasma source is discharged, and the second plasma source includes a second opening through which a process gas activated by the second plasma source is discharged, and the first opening and the second opening are formed at the same height.

3. The first plasma source is, A first reaction body comprising a plurality of first body portions, each having a plurality of first gas diffusion spaces formed inside, and a plurality of first insulating portions coupled between the plurality of first body portions, wherein the plurality of first body portions are arranged such that the plurality of first gas diffusion spaces as a whole form the first toroidal channel, A plurality of first magnetic cores are arranged to surround each of the first reaction bodies and to be spaced apart from each other along the first toroidal channel, A plurality of first windings are arranged to surround the plurality of first magnetic cores, and power is supplied from the plasma power supply unit to induce magnetic force within the plurality of first magnetic cores, Includes, The insulating member is The substrate processing apparatus according to claim 1 or claim 2, comprising a plurality of first insulating members bonded to at least one surface of the first reaction body.

4. The first reaction body is A plurality of first-first body portions forming at least a portion of the first toroidal channel, Other parts of the first toroidal channel, comprising a plurality of first-2 body portions formed on the sides of the plurality of first-1 body portions, to which the plurality of first insulating portions are coupled externally, Multiple first gas inlets are formed by penetrating at least a portion of the multiple first-1 body portions so that process gas supplied from the outside flows into the multiple first gas diffusion spaces, A plurality of first openings are formed in at least a portion of the plurality of first-1 body portions and are used to discharge the activated process gas from the first reaction body, A substrate processing apparatus according to claim 3, including the following:

5. The second plasma source is, A second reaction body comprising a second body portion formed inward from the first reaction body and having a second gas diffusion space formed inside, and a second insulating portion coupled to the second body portion, wherein the second body portion is arranged such that the second gas diffusion space as a whole forms the second toroidal channel, A second magnetic core is positioned in a portion of the second toroidal channel, surrounding the second reaction body, A second winding is arranged to surround the second magnetic core, and power is supplied from the plasma power supply unit to induce a magnetic field within the second magnetic core. A second insulating member bonded to at least one surface of the second reaction body, A substrate processing apparatus according to claim 1 or claim 2, comprising:

6. The second reaction body is The second-first body portion forms a part of the second toroidal channel, The other portion of the second toroidal channel, which is formed to be connected to the second-first body portion and to which the second insulating portion is coupled externally, At least one second gas inlet is formed by penetrating at least a portion of the 2-1 body so that the process gas flows into the second gas diffusion space, At least one second opening is formed in at least a portion of the second-first body portion and discharges the activated process gas from the second reaction body, The substrate processing apparatus according to claim 5, including the following:

7. The aforementioned gas discharge plate is A plurality of first gas outlets are formed at positions corresponding to the first opening so as to supply the process gas activated by the first plasma source to the gas injection section, To supply the process gas activated by the second plasma source to the gas injection section, at least one second gas outlet is formed at a position corresponding to the second opening, A substrate processing apparatus according to claim 2, including the following:

8. The substrate processing apparatus according to claim 7, characterized in that each of the first gas outlet and the second gas outlet is formed in the form of a plurality of holes.

9. The control unit, A substrate processing apparatus according to claim 1 or claim 2, comprising controlling the operation of a first flow rate regulator for adjusting the amount of process gas supplied to the first plasma source, and a second flow rate regulator for adjusting the amount of process gas supplied to the second plasma source.

10. The control unit, The substrate processing apparatus according to claim 9, wherein the operation of the first flow regulator and the second flow regulator is controlled so that a larger amount of the process gas is activated in the first plasma source than in the second plasma source.

11. The aforementioned plasma power supply unit is A first power supply unit that applies RF power to the first plasma source, A second power supply unit that applies RF power to the second plasma source, A substrate processing apparatus according to claim 1 or claim 2, comprising:

12. The control unit, The substrate processing apparatus according to claim 11, wherein the power applied to the second power supply is controlled to be greater than the power applied to the second power supply, so that a larger amount of the process gas is activated in the first plasma source than in the second plasma source.

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