Plasma source assembly and substrate processing apparatus

Abstract

A plasma source assembly according to one aspect of the present invention includes a gas exhaust plate having a plurality of gas exhaust holes, and at least one plasma source coupled on the gas exhaust plate, the at least one plasma source including a reaction body having an opening formed in at least a portion of it, a plurality of magnetic cores surrounding the plurality of body portions, and a plurality of windings arranged to wind the plurality of magnetic cores and receiving power from a power supply to induce magnetic force in the plurality of magnetic cores, and each cooling section for the flow of a cooling medium may be formed in at least a portion of each of the body portions.

Description

Technical Field

[0001] The present invention relates to semiconductor manufacturing technology, and more particularly to a plasma source assembly and a substrate processing apparatus using the same.

Background Art

[0002] In a substrate processing apparatus for forming a semiconductor element, without directly forming plasma in a process chamber, an activated reactant, for example, a radical, is supplied into the process chamber using a plasma source outside the process chamber, such as a remote plasma generator, and a device and a process for substrate processing are being studied. When using such a remote plasma generator in this way, a desired reactant can be generated and supplied to the process chamber, and since plasma is not directly formed in the process chamber, it is possible to prevent plasma damage from occurring on the substrate.

[0003] In order to reduce the path through which radicals generated by a remote plasma generator are supplied onto a substrate, an assembly structure that couples a plasma source to a gas injection portion of a process chamber has been studied. According to this, it is possible to increase the activation ratio of radicals supplied from the plasma source assembly structure onto the substrate and improve the process efficiency during substrate processing. Furthermore, a cooling structure for increasing the plasma efficiency of such a plasma source assembly has been studied.

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present invention is for solving the above-described problems, and one technical problem according to the present invention is to provide a plasma source assembly capable of reducing plasma damage on a substrate and increasing the process efficiency during substrate processing, and a substrate processing apparatus using the same.

[0005] However, such problems are exemplary, and the scope of the present invention is not limited thereby.

Means for Solving the Problems

[0006] A plasma source assembly according to one aspect of the present invention for solving one technical problem of the present invention described above includes a gas exhaust plate having a plurality of gas exhaust holes formed therein, and at least one plasma source coupled on the gas exhaust plate to supply activated process gas to the gas exhaust plate, wherein the at least one plasma source includes a plurality of body parts, each having a gas diffusion space formed therein, and a plurality of insulating parts coupled between the plurality of body parts such that the gas diffusion spaces communicate with each other, and a reaction body having an opening formed in at least a portion of each of the plurality of body parts, such that the gas diffusion spaces within the plurality of body parts form a toroidal channel as a whole, a plurality of magnetic cores arranged spaced apart from each other along the toroidal channel while surrounding each of the plurality of body parts, and a plurality of windings arranged to wind the plurality of magnetic cores and receiving power from a power supply to induce magnetic force within the plurality of magnetic cores, wherein each cooling section for the flow of a cooling medium may be formed in at least a portion of each of the plurality of body parts.

[0007] According to some embodiments of the present invention, the plurality of body portions each include a first body portion having a first length and a second body portion having a second length, wherein the first length is greater than the second length, and the plurality of magnetic cores may be arranged to surround the second body portion.

[0008] According to some embodiments of the present invention, each cooling section is formed on at least one surface of the first body section, and each cooling section may have a refrigerant inlet connected to one end of the cooling section and a refrigerant outlet connected to the other end of the cooling section.

[0009] According to some embodiments of the present invention, flanges are formed on both ends of the second body portion, one side of the first body portion is coupled to each flange on one side of the second body portion, and the plurality of insulating portions can be coupled between each flange on the other side of the second body portion and the other side of the first body portion.

[0010] According to some embodiments of the present invention, one side of the second body portion is coupled to the other side of the first body portion, and the plurality of insulating portions are sealed and coupled to the other side of the second body portion and to one side of the adjacent first body portion, and may include a toroidal channel forming portion that forms the toroidal channel on the inside.

[0011] According to some embodiments of the present invention, the first body portion includes an upper wall formed on the upper surface of each gas diffusion space, side walls formed on both sides in the width direction of each gas diffusion space, and a lower wall formed on the lower surface of each gas diffusion space, wherein each cooling portion is formed on at least one of the upper wall and the side walls, and the opening can be formed in the lower wall.

[0012] According to some embodiments of the present invention, a cover plate can be joined to at least one of the upper walls and side walls of the plurality of body parts so as to cover the groove shape of each cooling part.

[0013] According to some embodiments of the present invention, each cooling unit includes a flow channel groove patterned in a predetermined shape and a lid member that covers the flow channel groove and forms a refrigerant flow channel through which the cooling medium flows, wherein a refrigerant inlet for supplying the cooling medium to the refrigerant flow channel is formed on one side of the lid member and a refrigerant outlet for discharging the cooling medium that has passed through the refrigerant flow channel is formed on the other side of the lid member.

[0014] According to some embodiments of the present invention, in the at least one plasma source, an insulating member may be coupled between the gas exhaust plate and the at least one plasma source.

[0015] According to some embodiments of the present invention, the gas discharge plate may be formed of an insulating material.

[0016] According to some embodiments of the present invention, the at least one plasma source includes a first plasma source coupled on the gas exhaust plate, and a second plasma source disposed separately outside the first plasma source and coupled on the gas exhaust plate, wherein the gas exhaust plate includes a first gas exhaust section to which the first plasma source is coupled, and a second gas exhaust section to which the second plasma source is coupled, wherein a process gas activated by the first plasma source is supplied to the first gas exhaust section through a first opening which is an opening of the first plasma source, and a process gas activated by the second plasma source can be supplied to the second gas exhaust section through a second opening which is an opening of the second plasma source.

[0017] According to some embodiments of the present invention, in the gas discharge plate, the first gas discharge section and the second gas discharge section can be formed integrally on the same plane.

[0018] According to some embodiments of the present invention, in the gas discharge plate, the first gas discharge section and the second gas discharge section may be stepped plate members having different heights, such that the first opening and the second opening are arranged at different heights from each other.

[0019] According to some embodiments of the present invention, the first gas discharge section may be positioned higher than the second gas discharge section, such that the first opening is positioned higher than the second opening.

[0020] According to some embodiments of the present invention, the first gas outlet and the second gas outlet are arranged in a right-angle structure, the first gas outlet is positioned on a plane such that the first opening faces downward, and the second gas outlet is positioned on a vertical plane such that the second opening faces laterally.

[0021] According to some embodiments of the present invention, the gas discharge plate is a stepped plate member including a horizontal wall and a vertical wall extending vertically downward from the periphery of the horizontal wall so as to have different heights from each other, the first gas discharge portion is formed in the horizontal wall, and the second gas discharge portion may be formed in the vertical wall.

[0022] A substrate processing apparatus according to an aspect of the present invention for solving one technical problem of the present invention described above includes a process chamber in which a reaction space is formed, a chamber lid coupled to an upper portion of the process chamber, a substrate support portion coupled to a lower portion of the process chamber so as to support a substrate in the reaction space, at least one plasma source assembly according to any one of claims 1 to 11 coupled to the chamber lid, and a gas injection portion facing the substrate support portion and disposed below the at least one plasma source assembly, in which a gas injection plate for injecting a process gas activated by the plasma source assembly onto the substrate support portion is formed.

Advantages of the Invention

[0023] According to some embodiments of the plasma source assembly and the substrate processing apparatus of the present invention configured as described above, by forming a cooling line in the plasma source assembly, plasma damage can be reduced, and process stability and process efficiency during substrate processing can be enhanced. Of course, the scope of the present invention is not limited by such effects.

Brief Description of the Drawings

[0024] [Figure 1] It is a schematic diagram showing a plasma source according to an embodiment of the present invention. [Figure 2] It is a schematic perspective view showing the plasma source of FIG. 1. [Figure 3] It is a schematic diagram showing power transmission in the plasma source of FIG. 1. [Figure 4] It is a schematic perspective view showing a partial configuration of a reaction body in the plasma source of FIG. 1. [Figure 5] It is a schematic perspective view showing a part of the reaction body in the plasma source of FIG. 1. [Figure 6] It is a sectional view taken along line D-D' of FIG. 5. [Figure 7] It is a schematic perspective view showing a cut part in the plasma source assembly according to each embodiment of the present invention. [Figure 8] It is a schematic perspective view showing a cut part in the plasma source assembly according to each embodiment of the present invention. [Figure 9] It is a schematic perspective view showing a cut part in the plasma source assembly according to each embodiment of the present invention. [Figure 10] It is a schematic perspective view showing a cut part in the plasma source assembly according to each embodiment of the present invention. [Figure 11] It is a schematic perspective view showing a cut part in the plasma source assembly according to each embodiment of the present invention. [Figure 12] It is a schematic sectional view showing a substrate processing apparatus according to an embodiment of the present invention. [Figure 13] It is a schematic sectional view showing a substrate processing apparatus according to another embodiment of the present invention.

Best Mode for Carrying Out the Invention

[0025] Hereinafter, various preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0026] Each embodiment of the present invention is provided to more fully explain the present invention to those having ordinary knowledge in the relevant technical field. The following embodiments can be modified into various other forms, and the scope of the present invention is not limited to the following embodiments. Rather, these embodiments are provided to further enrich and complete the present disclosure and to fully convey the idea of the present invention to those skilled in the art.

[0027] Furthermore, the thickness and size of each layer in the drawings are exaggerated for the sake of clarity and ease of explanation. Moreover, embodiments of the concept of the present invention should not be construed as being limited to specific shapes of the regions shown herein, but should include, for example, changes in shape that occur during manufacturing.

[0028] Figure 1 is a schematic diagram showing a plasma source 200 according to one embodiment of the present invention, Figure 2 is a schematic perspective view showing the plasma source 200 of Figure 1, and Figure 3 is a schematic diagram showing power transfer in the plasma source 200 of Figure 1.

[0029] Referring to Figures 1 to 3, the plasma source 200 may include a reaction body 210, a plurality of magnetic cores 220a, 220b, 220c, and a plurality of windings 224a, 224b, 224c.

[0030] The reaction body 210 may include a plurality of body sections 212a, 212b, 212c and a plurality of insulating sections 216a, 216b, 216c. Inside each of the plurality of body sections 212a, 212b, 212c, gas diffusion spaces 214a, 214b, 214c may be formed. More specifically, a gas diffusion space 214a may be formed inside body section 212a, a gas diffusion space 214b may be formed inside body section 212b, and a gas diffusion space 214c may be formed inside body section 212c. The cross-sections of each gas diffusion space 214a, 214b, 214c can have various shapes such as circles, ellipses, and polygons.

[0031] In some embodiments, the multiple body portions 212a, 212b, and 212c may be formed by coating a conductive material with an insulating material. For example, the multiple body portions 212a, 212b, and 212c may be formed by coating a metal with an insulator, such as a metal oxide or metal nitride.

[0032] Multiple insulating parts 216a, 216b, 216c can be coupled between multiple body parts 212a, 212b, 212c. Multiple insulating parts 216a, 216b, 216c can be interposed between each of the two body parts 212a, 212b, 212c such that they are separated from each other without being directly electrically connected.

[0033] For example, the multiple insulating sections 216a, 216b, and 216c may have flow paths formed inside them such that the gas diffusion spaces 214a, 214b, and 214c within each body section 212a, 212b, and 212c are in communication with one another. The multiple insulating sections 216a, 216b, and 216c may be formed from a suitable insulating material, such as an oxide, nitride, or polymer resin.

[0034] More specifically, the multiple insulating portions may include toroidal channel forming portions that are sealed and coupled to the other side of the second body portions 2122a, 2122b, and 2122c (described later) and to one side of adjacent first body portions 2121a, 2121b, and 2121c, and that form a toroidal channel 214 on the inside.

[0035] In some embodiments, the gas diffusion spaces 214a, 214b, and 214c in the reaction body 210 can collectively form a toroidal channel 214. More specifically, the multiple body portions 212a, 212b, and 212c can be formed to correspond to each structure that divides the overall shape of the toroidal channel 214, thereby defining the toroidal channel 214 as a whole. For example, if the toroidal channel 214 is formed in a donut shape as a whole, the multiple body portions 212a, 212b, and 212c can be formed to correspond to each structure that divides this donut shape into multiple parts.

[0036] In some embodiments, the reaction body 210 may be formed with a gas inlet 2123 for introducing gas into the toroidal channel 214 and an opening 2124 for discharging gas.

[0037] Multiple magnetic cores 220a, 220b, and 220c may be arranged to surround multiple body portions 212a, 212b, and 212c, respectively, while being separated from each other by toroidal channels 214. For example, multiple magnetic cores 220a, 220b, and 220c may be arranged on multiple body portions 212a, 212b, and 212c, respectively. More specifically, magnetic core 220a may be arranged to surround the outer circumferential surface of body portion 212a, magnetic core 220b may be arranged to surround the outer circumferential surface of body portion 212b, and magnetic core 220c may be arranged to surround the outer circumferential surface of body portion 212c. For example, multiple magnetic cores 220a, 220b, and 220c may include magnetic materials, such as ferrite material.

[0038] In some embodiments, each of the multiple magnetic cores 220a, 220b, and 220c may be formed as a single closed structure or may have a structure in which multiple divided parts are joined together.

[0039] Multiple windings 224a, 224b, and 224c may be arranged to wind multiple magnetic cores 220a, 220b, and 220c. For example, winding 224a may be arranged to wind magnetic core 220a, winding 224b may be arranged to wind magnetic core 220b, and winding 224c may be arranged to wind magnetic core 220c.

[0040] The multiple windings 224a, 224b, and 224c can induce magnetic forces within the multiple magnetic cores 220a, 220b, and 220c after receiving power from the power supply unit 230. For example, when the multiple windings 224a, 224b, and 224c are wound in the width direction of the multiple magnetic cores 220a, 220b, and 220c, when power is applied to the multiple windings 224a, 224b, and 224c, magnetic forces can be induced within the multiple magnetic cores 220a, 220b, and 220c along their circumferential direction.

[0041] The power supply unit 230 may include a power supply device and can supply RF power to multiple windings 224a, 224b, and 224c via a resonant circuit (not shown). For example, the power supply unit 230 may include a switching mode power supply (SMPS).

[0042] In the plasma source 200, the number of multiple body portions 212a, 212b, and 212c is shown exemplarily and can be selected from two or more. Furthermore, the number of multiple magnetic cores 220a, 220b, and 220c, multiple windings 224a, 224b, and 224c, and insulating portion 216 can be varied depending on the number of multiple body portions 212a, 212b, and 212c.

[0043] In some embodiments, the multiple body portions 212a, 212b, and 212c may each include a first body portion 2121a, 2121b, and 2121c, and a second body portion 2122a, 2122b, and 2122c, respectively. For example, body portion 212a may include a first body portion 2121a and a second body portion 2122a joined to each other, body portion 212b may include a first body portion 2121b and a second body portion 2122b joined to each other, and body portion 212c may include a first body portion 2121c and a second body portion 2122c joined to each other. That is, one side of the second body portions 2122a, 2122b, and 2122c may each be joined to the other side of the first body portions 2121a, 2121b, and 2121c, respectively.

[0044] For example, the first body parts 2121a, 2121b, and 2121c may have a first length, and the second body parts 2122a, 2122b, and 2122c may have a second length. The first length may be greater than the second length. For example, the first length may be more than three times greater than the second length.

[0045] Flanges 2126 and 2127 may be formed on both ends of the second body portions 2122a, 2122b, and 2122c. For example, one side of the first body portions 2121a, 2121b, and 2121c may be formed on each flange 2127 on one side of the second body portions 2122a, 2122b, and 2122c, and multiple insulating portions 216a, 216b, and 216c may be coupled between each flange 2126 on the other side of the second body portions 2122a, 2122b, and 2122c and the other side of the first body portions 2121a, 2121b, and 2121c. Multiple magnetic cores 220a, 220b, and 220c may be arranged to surround the second body portions 2122a, 2122b, and 2122c.

[0046] In some embodiments, at least one gas inlet 2123 may be formed in the upper wall A1 of the first body portions 2121a, 2121b, and 2121c, and at least one opening 2124 may be formed in the lower wall A2 of the first body portions 2121a, 2121b, and 2121c. For example, the upper wall A1 refers to a wall body including the upper surface of each gas diffusion space 214, and the lower wall A2 refers to a wall body including the bottom surface, and the upper wall A1 and the lower wall A2 may be connected by side walls. The gas flowing into the toroidal channel 214 through the gas inlet 2123 can be activated by the plasma and discharged to the bottom of the plasma source 200 through the opening 2124. For example, the opening 2124 may be formed as a slit-shaped opening.

[0047] In some embodiments, the gas inlet 2123 may be formed in the side walls of the first body portions 2121a, 2121b, and 2121c.

[0048] In some embodiments, cooling sections 2125 for the flow of a cooling medium may be formed within at least a portion of each of the multiple body sections 212a, 212b, and 212c. The reaction body 210 can be cooled by the circulation of the cooling medium through each cooling section 2125. For example, each cooling section 2125 may be formed as a cooling channel on one surface of the multiple body sections 212a, 212b, and 212c. The cooling medium may include cooling water.

[0049] As shown in Figures 4 and 5, each cooling section 2125 is formed on at least one surface of the first body sections 2121a, 2121b, and 2121c, and at least one surface of the first body sections 2121a, 2121b, and 2121c may have a refrigerant inlet H1 connected to one end of each cooling section 2125 and a refrigerant outlet H2 connected to the other end of each cooling section 2125.

[0050] In some embodiments, each cooling section 2125 may have a groove-shaped structure formed on at least one of the upper wall A1 and the side wall of the first body sections 2121a, 2121b, and 2121c.

[0051] Specifically, each cooling section 2125 can be formed as a flow channel groove patterned to a predetermined shape. For example, each cooling section 2125 can be formed by cutting a flow channel groove into the upper wall A1 of the first body sections 2121a, 2121b, and 2121c through a manufacturing process.

[0052] Furthermore, a cover member can be attached to at least one of the upper walls A1 and the side walls of the first body portions 2121a, 2121b, and 2121c so as to cover the groove shape of each cooling portion 2125.

[0053] The cover member covers the flow channel groove and forms a refrigerant flow channel through which the cooling medium flows, and may include a cover plate 2128. A refrigerant inlet H1 for supplying the cooling medium to the refrigerant flow channel may be formed on one side of the cover member, and a refrigerant outlet H2 for discharging the cooling medium that has passed through the refrigerant flow channel may be formed on the other side of the cover member. As a result, most of each cooling section 2125 is sealed, and a refrigerant supply line (not shown) may be connected to the refrigerant inlet H1 and the refrigerant outlet H2.

[0054] Alternatively, cooling sections with separate cooling lines can be combined to form each cooling section 2125.

[0055] As shown in Figures 5 and 6, the cover plate 2128 may be formed as a plate member with a shape corresponding to each cooling section 2125 formed in a groove shape, or as a plate member with a shape corresponding to the entire surface on which each cooling section 2125 is formed.

[0056] In some embodiments, the upper walls A1 of the first body portions 2121a, 2121b, and 2121c may be formed thicker than the other walls so that each cooling portion 2125 can be formed. For example, in the first body portions 2121a, 2121b, and 2121c, the upper wall A1 may be thicker than the lower wall A2 and also thicker than each side wall.

[0057] According to the plasma source 200, when power is applied from the power supply unit 230 to multiple windings 224a, 224b, and 224c, a magnetic force is induced in multiple magnetic cores 220a, 220b, and 220c. This induced magnetic force can induce a current in the toroidal channel 214 that penetrates the interior of the multiple magnetic cores 220a, 220b, and 220c. This current can activate the gas within the toroidal channel 214, potentially forming a plasma atmosphere.

[0058] In the plasma source 200, a structure in which magnetic forces are induced in multiple magnetic cores 220a, 220b, and 220c from the currents flowing through multiple windings 224a, 224b, and 224c, and that currents are induced in the toroidal channel 214 by these induced magnetic forces, can correspond to the principle of a transformer. In this respect, the plasma source 200 can also be called a transformer-coupled plasma (TCP) device or a magnetic induction plasma device.

[0059] In some embodiments, in a transformer structure, multiple windings 224a, 224b, and 224c can function as primary coils, and a toroidal channel 214, limited by multiple body portions 212a, 212b, and 212c, can function as a secondary coil. In this respect, the multiple windings 224a, 224b, and 224c may be called primary coils or primary windings, and the current flowing through the multiple windings 224a, 224b, and 224c may be called primary current. Furthermore, the current induced in the toroidal channel 214 may also be called secondary current.

[0060] According to the plasma source 200 described above, by coupling multiple magnetic cores 220a, 220b, and 220c on multiple body sections 212a, 212b, and 212c, plasma can be stably formed in the toroidal channel 214. Furthermore, by controlling the temperature of the multiple body sections 212a, 212b, and 212c through each cooling section 2125, plasma damage to the reaction body 210 can be reduced. In addition, by forming each cooling section 2125 on the multiple body sections 212a, 212b, and 212c, the temperature of the reaction body 210 can be controlled uniformly throughout.

[0061] Figure 7 is a schematic perspective view showing a cross-section of a plasma source assembly 3000 according to an embodiment of the present invention.

[0062] Referring to Figure 7, the plasma source assembly 3000 may include a gas exhaust plate 7000 and at least one plasma source 3100.

[0063] The plasma source 3100 can have substantially the same structure as the plasma source 200 described above, and therefore the configuration and description for the plasma source 200 can be referred to. Multiple gas exhaust holes 7100 may be formed in the gas exhaust plate 7000. Each gas exhaust hole 7100 is a hole structure that penetrates the gas exhaust plate 7000 and can be formed in the shape of a cylinder, cone, pyramid, etc.

[0064] The plasma source 3100 may be coupled onto the gas exhaust plate 7000 to supply activated process gas to the gas exhaust plate 7000. For example, each gas exhaust hole 7100 may be formed on the gas exhaust plate 7000 to conform to the shape of the plasma source 3100 so as to be aligned with the opening 2124, so that each gas exhaust hole 7100 communicates with the opening 2124 of the plasma source 3100.

[0065] In this way, by coupling the gas exhaust plate 7000 to the plasma source 3100, the activated process gas generated in the plasma source 3100 can be easily supplied to the bottom of the plasma source 3100 through the opening 2124 and then ejected through the gas exhaust plate 7000, while conversely, it is possible to suppress the inflow of particles and the like into the plasma source 3100 from outside the gas exhaust plate 7000.

[0066] In some embodiments, a source insulating member 3170 may be interposed between the plasma source 3100 and the gas exhaust plate 7000. This prevents noise currents such as ground current and leakage current from being transmitted to the plasma source 3100 via the gas exhaust plate 7000.

[0067] In some other embodiments, the gas exhaust plate 7000 may be formed of an insulating material.

[0068] Figures 8 to 11 are schematic perspective views showing cut sections of each plasma source assembly 3000a, 3000b, 3000c, and 3000d according to each embodiment of the present invention.

[0069] Referring to Figures 8 to 11, each plasma source assembly 3000a, 3000b, 3000c, and 3000d may include a gas exhaust plate 7000, a first plasma source 3200, and a second plasma source 3100, respectively.

[0070] The second plasma source 3100 may have a substantially identical structure to the plasma source 200 described above, and therefore the configuration and description for the plasma source 200 can be referred to. The first plasma source 3200 may have a structure similar to the plasma source 200 described above, except that some configurations in the plasma source 200 may be modified in that its diameter is smaller. For example, in the first plasma source 3200, the reaction body 210 may consist of one or two pieces instead of three, thereby providing one or two magnetic cores.

[0071] The first plasma source 3200 is provided with a first opening 2124a through which activated process gas is discharged, and the second plasma source 3100 may be provided with a second opening 2124b through which activated process gas is discharged. The first opening 2124a and the second opening 2124b can be described by referring to the description of the opening 2124 of the plasma source 200.

[0072] The first plasma source 3200 and the second plasma source 3100 can be coupled to the gas exhaust plate 7000, respectively. For example, the second plasma source 3100 can be coupled to the gas exhaust plate 7000 so as to be spaced apart from the first plasma source 3200. More specifically, the first plasma source 3200 can be coupled to the inside of the gas exhaust plate 7000, and the second plasma source 3100 can be coupled to the outside of the gas exhaust plate 7000 so as to be outside the first plasma source 3200.

[0073] In some embodiments, the gas exhaust plate 7000 may include a first gas exhaust section 7000a to which a first plasma source 3200 is coupled, and a second gas exhaust section 7000b to which a second plasma source 3100 is coupled. For example, the first gas exhaust section 7000a may refer to the inner portion of the gas exhaust plate 7000, and the second gas exhaust section 7000b may refer to the outer portion of the gas exhaust plate 7000. An insulating member 3270 may be interposed between the first gas exhaust section 7000a and the first plasma source 3200, and a source insulating member 3170 may be interposed between the second gas exhaust section 7000b and the second plasma source 3100.

[0074] The process gas activated in the first plasma source 3200 is supplied to the first gas outlet 7000a through the first opening 2124a, and the process gas activated in the second plasma source 3100 may be supplied to the second gas outlet 7000b through the second opening 2124b.

[0075] In this way, by arranging multiple plasma sources, such as a first plasma source 3200 and a second plasma source 3100, on the gas exhaust plate 7000, the amount of activated process gas, such as radicals, emitted can be adjusted for each region. For example, the amount of radicals emitted from the first plasma source 3200 and the second plasma source 3100 can be adjusted according to the size and shape of the first opening 2124a and the second opening 2124b.

[0076] In some embodiments, as shown in Figure 8, the first gas outlet 7000a and the second gas outlet 7000b may be integrally formed on the same plane in the plasma source assembly 3000a. This allows the first opening 2124a of the first plasma source 3200 and the second opening 2124b of the second plasma source 3100 to be positioned at the same height. In this case, the process gas supply conditions and / or plasma generation conditions of the first plasma source 3200 and the second plasma source 3100 can be controlled separately for each plasma source, and the process environment, such as plasma density, can be controlled region by region through the gas outlet plate 7000.

[0077] In some embodiments, as shown in Figures 9 to 11, the first gas outlet 7000a and the second gas outlet 7000b may be stepped plate members having different heights, such that the first opening 2124a and the second opening 2124b are positioned at different heights in the plasma source assemblies 3000b, 3000c, and 3000d. Through such a structure, the process gas supplied from the inside of the gas outlet plate 7000, i.e., from the first gas outlet 7000a, is supplied relatively to the center of the substrate support 2000, and the process gas supplied from the outside, i.e., from the second gas outlet 7000b, is supplied relatively to the edge of the substrate support 2000. The first gas outlet 7000a and the second gas outlet 7000b may be formed separately and then joined together, or they may be formed integrally and then subjected to processing steps such as bending to form the gas outlet plate 7000.

[0078] For example, as shown in Figure 9, in the plasma source assembly 3000b, the first gas outlet 7000a may be positioned higher than the second gas outlet 7000b such that the first opening 2124a is positioned higher than the second opening 2124b. In this case, the supply density of the process gas supplied to the substrate support formed below the gas outlet plate 7000 may be higher than that of the inside.

[0079] In another example, as shown in Figure 10, in a plasma source assembly 3000c, the gas exhaust plate 7000 is a stepped plate member including a horizontal wall and a vertical wall extending vertically downward from the periphery of the horizontal wall, having different heights from each other, wherein a first gas exhaust section 7000a may be formed in the horizontal wall and a second gas exhaust section 7000b may be formed in the vertical wall.

[0080] Specifically, the first gas outlet 7000a and the second gas outlet 7000b may be arranged at a right angle to each other. This allows the first gas outlet 7000a to be positioned on a plane such that the first opening 2124a faces downward, and the second gas outlet 7000b to be positioned on a vertical plane such that the second opening 2124b faces laterally. In this case, the supply density of process gas to the substrate support formed below the gas outlet plate 7000 may be higher than that of the inside.

[0081] In yet another example, as shown in Figure 11, in the plasma source assembly 3000d, the first gas outlet 7000a may be positioned on a plane, and the second gas outlet 7000b may be positioned so as to slope downward from the end of the first gas outlet 7000a towards the outer edge. In this case, the supply density of the process gas supplied to the substrate support formed below the gas outlet plate 7000 may be higher than that of the inside.

[0082] Furthermore, although not shown in the figures, in the plasma source assembly, the second gas outlet 7000b may be positioned higher than the first gas outlet 7000a such that the second opening 2124b formed on the outside is positioned higher than the first opening 2124a formed on the inside. In this case, the gas supplied from the center of the gas outlet plate 7000 flows from the center to the edge of the substrate support formed below, and additionally activated gas can be supplied to the edge of the substrate support where the reaction with the relatively activated gas is low.

[0083] The plasma source assemblies 3000, 3000a, 3000b, 3000c, and 3000d described above refer to structures in which the plasma sources 3100 and 3200 are coupled to the gas exhaust plate 7000. However, the terminology is not limited to these terms, and plasma sources and plasma source assemblies may both be referred to as plasma sources or both as plasma source assemblies without distinction.

[0084] Figure 12 is a schematic cross-sectional view showing a substrate processing apparatus 5000a according to one embodiment of the present invention.

[0085] Referring to Figure 12, the substrate processing apparatus 5000a may include a process chamber 1000, a gas injection unit 4000, a substrate support unit 2000, at least one plasma source assembly 3000a, and a control unit.

[0086] A reaction space A may be formed inside the process chamber 1000. The process chamber 1000 may include a chamber lid 1100a at its upper end to seal the interior. The process chamber 1000 may be connected to a vacuum pump 1300 via an exhaust section 1200 to create a vacuum atmosphere. Furthermore, the process chamber 1000 may include an inlet and outlet for loading the substrate S into or unloading it from the reaction space A, and a gate (not shown) for opening and closing it.

[0087] The gas injection unit 4000 may be coupled to the process chamber 1000 to inject process gas supplied from outside the process chamber 1000 into the reaction space A. For example, the gas injection unit 4000 may be coupled to the upper part of the process chamber 1000 so as to face the substrate support unit 2000. The gas injection unit 4000 can supply process gas, such as a source gas, reaction gas, or inert gas, onto the substrate S in the reaction space A.

[0088] In some embodiments, the gas injection unit 4000 may be understood as a structure coupled to the process chamber 1000, or as a structure coupled to the chamber lid 1100a.

[0089] The plasma source assembly 3000a is for activating an externally supplied process gas, and can be described in Figure 8. The plasma source assembly 3000a may be coupled to the process chamber 1000 so as to face the substrate support 2000. For example, the plasma source assembly 3000a may be coupled to the chamber lid 1100a. The plasma source assembly 3000a can supply activated process gas, such as radicals, to the space below it, for example, inside the gas injection unit 4000.

[0090] For example, the first plasma source assembly 3200 may be positioned in a donut shape on the central portion of the chamber lid 1100a, and the second plasma source assembly 3100 may be positioned on the edge of the chamber lid 1100a in a larger diameter donut shape surrounding the donut structure of the first plasma source assembly 3200. The first plasma source 3200 can receive the process gas via the first gas piping 3280, and the second plasma source 3100 can receive the process gas via the second gas piping 3180. Such a plasma source assembly 3000a allows activated process gas to be injected throughout the center and edge of the gas injection section 4000.

[0091] In some embodiments, the gas injection unit 4000 may include a distribution plate 4100 for injecting activated process gas supplied from the plasma source assembly 3000a into the reaction space A. The distribution plate 4100 may have a number of injection holes formed vertically. Optionally, the gas injection unit 4000 may further include a middle plate, such as a blocker plate, for injecting gas between the top lid 1100 and the distribution plate 4100.

[0092] In some embodiments, the gas injection unit 4000 may further include a separate gas inlet to supply process gas to its interior without passing through the plasma source assembly 3000a. In this case, the gas injection unit 4000 can supply both process gas activated through the plasma source assembly 3000a and process gas that is not activated because it does not pass through the plasma source assembly 3000a.

[0093] The substrate support section 2000 may be coupled to the process chamber 1000 to support the substrate S within the reaction space A. For example, the substrate support section 2000 may be installed in the process chamber 1000 facing the gas injection section 4000. Furthermore, the substrate support section 2000 may include a heater (not shown) inside for heating each substrate S. Since the substrate support section 2000 is configured to support the substrate S, it may also be called a substrate mounting section, susceptor, substrate holder, etc.

[0094] The control unit can control the flow rates of the process gas supplied to the first plasma source assembly 3200 and the second plasma source assembly 3100, respectively.

[0095] For example, the flow rate of the process gas supplied to the first plasma source assembly 3200, which supplies activated process gas to the center of the gas injection unit 4000, can be controlled to be relatively less, while the flow rate of the process gas supplied to the second plasma source assembly 3100, which supplies activated process gas to the edge of the gas injection unit 4000, can be controlled to be relatively more. In this case, the current applied to the multiple windings formed in each plasma source assembly can be controlled according to the flow rates of the process gas supplied to the first plasma source assembly 3200 and the second plasma source assembly 3100.

[0096] By controlling the flow rates of the process gas supplied to the first plasma source assembly 3200 and the second plasma source assembly 3100, respectively, the activated process gas can be controlled to be supplied uniformly throughout the substrate support section 2000.

[0097] Figure 13 is a schematic cross-sectional view showing a substrate processing apparatus 5000b according to another embodiment of the present invention. The substrate processing apparatus 5000b is an addition or modification of some of the components of the substrate processing apparatus 5000a in Figure 12, and the two embodiments can be referenced to one another, so redundant explanations are omitted.

[0098] Referring to Figure 13, the substrate processing apparatus 5000b may include a process chamber 1000, a gas injection unit 4000, a substrate support unit 2000, a plasma source assembly 3000b, and a control unit.

[0099] The plasma source assembly 3000b is for activating an externally supplied process gas, and can be described in Figure 9. The plasma source assembly 3000b may be coupled to the process chamber 1000 so as to face the substrate support 2000. For example, the plasma source assembly 3000b may be coupled to the chamber lid 1100a. The plasma source assembly 3000b can supply activated process gas, such as radicals, to the space below it, for example, inside the gas injection unit 4000.

[0100] According to the plasma source assembly 3000b, since the first plasma source 3200 is higher than the second plasma source 3100, the amount of process gas supplied at the edges of the substrate S can be increased compared to the amount supplied at the center. This adjustment of the process gas supply compensates for the relatively low plasma density at the edges of the substrate S, allowing the reaction on the substrate S to occur more uniformly.

[0101] The control unit can control the flow rate of the supplied process gas according to the heights of the first plasma source assembly 3200 and the second plasma source assembly 3100, respectively.

[0102] For example, the flow rate of the process gas supplied to the first plasma source assembly 3200, which supplies activated process gas to the center of the gas injection unit 4000, can be controlled to be the same as the flow rate of the process gas supplied to the second plasma source assembly 3100, which supplies activated process gas to the edge of the gas injection unit 4000.

[0103] As a result, the first plasma source assembly 3200 is formed relatively closer to the substrate support portion 2000 than the second plasma source assembly 3100, and even when the flow rate of the supplied process gas is the same, the activated process gas can be uniformly supplied throughout the substrate support portion 2000.

[0104] Alternatively, the flow rate of the process gas supplied to the first plasma source assembly 3200, which supplies activated process gas to the center of the gas injection unit 4000, and the flow rate of the process gas supplied to the second plasma source assembly 3100, which supplies activated process gas to the edge of the gas injection unit 4000, can be controlled to be different from each other.

[0105] In some embodiments, the first plasma source assembly 3200 is formed relatively closer to the substrate support portion 2000 than the second plasma source assembly 3100, and the flow rate of the process gas supplied to the second plasma source assembly 3100 can be controlled to be even higher, and the activated process gas can be controlled to be supplied uniformly throughout the substrate support portion 2000.

[0106] In other embodiments, the first plasma source assembly 3200 is formed relatively closer to the substrate support portion 2000 than the second plasma source assembly 3100, and the flow rate of the process gas supplied to the second plasma source assembly 3100 can be controlled to be even lower, so that the activated process gas is supplied uniformly throughout the substrate support portion 2000.

[0107] In other words, the control unit controls the flow rate of the process gas supplied to the first plasma source assembly 3200 and the second plasma source assembly 3100 according to the height at which they are installed, thereby enabling the activated process gas to be supplied uniformly throughout the substrate support section 2000.

[0108] Each of the substrate processing devices 5000a and 5000b described above can be used as a thin-film deposition apparatus, for example, an atomic layer deposition (ALD) apparatus or a chemical vapor deposition (CVD) apparatus.

[0109] On the other hand, while each substrate processing apparatus 5000a and 5000b shows a structure using each plasma source assembly 3000a and 3000b, it can be modified to use each plasma source assembly 3000c and 3000d.

[0110] In each substrate processing apparatus 5000a and 5000b, each plasma source assembly 3000a and 3000b is directly coupled to each gas injection unit 4000, and activated process gas, such as radicals, can be immediately supplied to the substrate S, thus reducing the radical supply path. As a result, using each plasma source assembly 3000a and 3000b reduces radical recombination compared to using a conventional remote plasma apparatus, thereby increasing the radical supply efficiency and improving process reliability.

[0111] Furthermore, in each substrate processing apparatus 5000a and 5000b, cooling units 2125 are formed within each plasma source assembly 3000a and 3000b, allowing for temperature control of each plasma source assembly 3000a and 3000b and reducing plasma damage to each plasma source assembly 3000a and 3000b, thereby improving the stability and process efficiency of the substrate processing process.

[0112] Although the present invention has been described with reference to the embodiments shown in the drawings, these are merely illustrative, and a person with ordinary skill in the art will understand that a variety of modifications and equivalent other embodiments are possible. Therefore, the true scope of technical protection of the present invention should be determined by the technical idea of ​​the appended claims.

Claims

1. A gas discharge plate having multiple gas discharge holes, and Includes at least one plasma source coupled to the gas exhaust plate to supply activated process gas to the gas exhaust plate, The at least one plasma source is A reaction body comprising a plurality of body portions, each having a gas diffusion space formed inside, and a plurality of insulating portions coupled between the plurality of body portions such that the gas diffusion spaces communicate with each other, wherein an opening is formed in at least a portion of each of the plurality of body portions, and the gas diffusion spaces within the plurality of body portions collectively form a toroidal channel. A plurality of magnetic cores are arranged along the toroidal channel, each surrounding the plurality of body portions, and are spaced apart from each other. It includes a plurality of windings arranged to wind the plurality of magnetic cores, which receive power from a power supply and then induce magnetic force within the plurality of magnetic cores, A plasma source assembly in which each of the plurality of body sections has a cooling section formed within at least a portion of it for the flow of a cooling medium.

2. Each of the aforementioned plurality of body parts includes a first body part having a first length and a second body part having a second length. The first length is greater than the second length. The plasma source assembly according to claim 1, wherein the plurality of magnetic cores are arranged to surround the second body portion.

3. Each of the aforementioned cooling units is Formed on at least one surface of the first body portion, The plasma source assembly according to claim 2, wherein at least one surface of the first body portion has a refrigerant inlet connected to one end of each cooling section and a refrigerant outlet connected to the other end of each cooling section.

4. Flanges are formed on both ends of the second body portion. Each flange on one side of the second body portion is connected to each of the flanges on one side of the first body portion, The plasma source assembly according to claim 2, wherein the plurality of insulating parts are connected between each flange on the other side of the second body and the other side of the first body.

5. One side of the second body portion is connected to the other side of the first body portion, The plurality of insulating parts are, The plasma source assembly according to claim 2, comprising a toroidal channel forming portion that is sealed and coupled to the other side of the second body portion and to one side of an adjacent first body portion, and which forms the toroidal channel on its inner side.

6. The first body portion is, This includes an upper wall formed on the upper surface of each gas diffusion space, side walls formed on both sides in the width direction of each gas diffusion space, and a lower wall formed on the lower surface of each gas diffusion space. Each of the cooling sections is formed on at least one of the upper wall and the side wall. The plasma source assembly according to claim 2, wherein the opening is formed in the lower wall.

7. The plasma source assembly according to claim 6, wherein a cover plate is bonded to at least one of the upper walls and side walls of the plurality of body parts so as to cover the groove shape of each of the cooling parts.

8. Each of the aforementioned cooling units is A flow channel groove patterned to a predetermined shape, The lid member covers the flow channel groove and forms a refrigerant flow channel through which the cooling medium flows, The plasma source assembly according to claim 1, wherein a refrigerant inlet is formed on one side of the lid member for supplying the cooling medium to the refrigerant flow path, and a refrigerant outlet is formed on the other side of the lid member for discharging the cooling medium that has passed through the refrigerant flow path.

9. In the at least one plasma source, The plasma source assembly according to claim 1, wherein an insulating member is coupled between the gas exhaust plate and the at least one plasma source.

10. The aforementioned gas discharge plate is A plasma source assembly according to claim 1, formed of an insulating material.

11. The at least one plasma source is A first plasma source coupled to the gas exhaust plate, and The system includes a second plasma source, which is positioned separately from the first plasma source and coupled to the gas exhaust plate, The aforementioned gas discharge plate is The first gas exhaust section to which the first plasma source is coupled, and The system includes a second gas exhaust section to which the second plasma source is coupled, The process gas activated in the first plasma source is supplied to the first gas discharge section through the first opening, which is the opening of the first plasma source. The plasma source assembly according to claim 1, wherein the process gas activated by the second plasma source is supplied to the second gas discharge section through a second opening which is an opening in the second plasma source.

12. In the aforementioned gas discharge plate, The plasma source assembly according to claim 11, wherein the first gas discharge section and the second gas discharge section are integrally formed on the same plane.

13. The aforementioned gas discharge plate is The plasma source assembly according to claim 11, wherein the first gas outlet and the second gas outlet are plate members having different heights so that the first opening and the second opening are arranged at different heights from each other.

14. The first gas discharge section is, The plasma source assembly according to claim 13, wherein the first opening is positioned higher than the second opening, and is positioned higher than the second gas discharge section.

15. The first gas discharge section and the second gas discharge section are arranged in a right-angle structure. The first gas discharge section is arranged on a plane such that the first opening faces downward. The plasma source assembly according to claim 13, wherein the second gas discharge section is arranged on a vertical plane such that the second opening faces laterally.

16. The aforementioned gas discharge plate is A stepped plate member comprising a horizontal wall and a vertical wall extending vertically downward from the periphery of the horizontal wall, having different heights from each other, The first gas discharge section is formed in the horizontal wall, The plasma source assembly according to claim 11, wherein the second gas discharge section is formed in the vertical wall.

17. A process chamber in which a reaction space is formed inside, A chamber lid coupled to the upper part of the aforementioned process chamber, A substrate support portion is coupled to the lower part of the process chamber to support the substrate within the reaction space. Coupled with the chamber lid, at least one plasma source assembly according to any one of claims 1 to 16, and A substrate processing apparatus comprising a gas injection unit, which is positioned opposite the substrate support and below the at least one plasma source assembly, and which has a gas injection plate formed thereon for injecting process gas activated by the plasma source assembly onto the substrate support.

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