Precise and accurate critical dimension measurement through modeling of localized electrostatic strain.

A charging effect model corrects measurement data in charged particle beam systems to address localized charging distortions, enhancing accuracy and precision in CD measurement and defect inspection.

JP2026520271APending Publication Date: 2026-06-23ASML NETHERLANDS BV
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
ASML NETHERLANDS BV
Filing Date
2024-04-08
Publication Date
2026-06-23

AI Technical Summary

Technical Problem

Existing charged particle beam detection systems suffer from distortion and imaging errors due to localized surface charging effects during scanning, leading to inaccuracies in critical dimension (CD) measurement and defect inspection in semiconductor manufacturing.

Method used

A charging effect model is employed to estimate and correct measurement data by incorporating a first and second term representing the actual parameters and charging function, respectively, to adjust multiple measurements and generate high-quality inspection images.

Benefits of technology

The model provides improved measurement accuracy and precision by accounting for charging effects, reducing distortions and aberrations in CD measurement and defect inspection.

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Abstract

A system and method for characterizing and predicting localized charging effects in critical dimension measurements of a wafer. The system and method may include a critical dimension model that includes a charging coefficient for each class of features on the wafer under inspection. The charging coefficient is obtained based on a dimensional model of the feature and may further include an initial charging state and a term that describes the change in localized charging effects as a function of time or the number of measurement scans in a given area.
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